... Accession Number : ADA398372. Title : Defect Engineering and Defect Complexes in Compound Semiconductors Alloys. ...

Distributions of the A-center (oxygen-vacancy) in neutron silicon detectors have been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon water depth for medium resistivity (0.1 {minus} 0.2 k{Omega}-cm) silicon detectors. A positive filling pulse was needed to detect the A-centers in high resistivity ...

This is because the concentrations of Si-A centers produced are barely detectable in these donor ... tion of defects (probably Si-A centers) of 6 X 10 1 4 ...

... Title : Theory of Electronic States and Formation Energies of Defect Complexes, Interstitial Defects and Crystal Growth in Semiconductors. ...

... IN PREVIOUS WORK THE DISTORTED WAVE BORN APPROXIMATION WAS DEVELOPED, IN WHICH A GENERAL SHAPED DEFECT IS ...

... Title : ANALYTICAL PREDICTION OF DEFECTS OCCURRENCE IN SIMPLE AND COMPLEX FORGINGS--PART III. ANALYSES ...

... Title : ANALYTICAL PREDICTION OF DEFECTS OCCURRENCE IN SIMPLE AND COMPLEX FORGINGS--PART II. DEFORMATION ...

... Accession Number : ADA203657. Title : Electronic Structure and Properties of Defect Complexes in Metals. Descriptive Note : Final rept. ...

Photoexcitation of silicon during low-fluence implantation with MeV Si and Ge ions is observed to suppress vacancy-type point-defect formation, as determined by {ital in situ} deep-level transient spectroscopy. The {ital A}-center formation after low-temperature implantation is extended over a wide temperature interval indicating that electrically inactive ...

... Accession Number : ADA389197. Title : Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs. ...

S>The silicon--A center is a major radiation-damage defect produced in "pulled" silicon by room-temperature irradiation. The infrared measurements are presented which, in conjunction with spin resonance measurements, establish the identity of the silicon-A center. A new infrared ...

defects in spacecraft, aircraft, ships, and other complex systems that contain large amounts of wiring, much of it enclosed in ...

... Title : ANALYTICAL PREDICTION OF DEFECTS OCCURRENCE IN SIMPLE AND COMPLEX FORGINGS--PART I. SOME ASPECTS OF FRICTION ...

An expansion of an efficient, fast Fourier technique for precisely characterizing complex laser target defects is described. The defects characterized are the traditional nonconcentricities and the more complex ellipticities and higher-order wall nonunifo...

... Accession Number : ADD851654. Title : OXYGEN-DEFECT COMPLEXES IN NEUTRON-IRRADIATED SILICON. Descriptive Note : Journal article,. ...

Electron spin resonance studies of fluorine interstitials were performed on the perovskite-structured RbCaF/sub 3/. Intrinsic fluorine interstitial (H) centers were induced in this material at 77 K by irradiation with 1.5 MeV electrons from a Van de Graaff accelerator. The ESR spectrometer employed was an X-band homodyne system. Intrinsic and perturbed fluorine interstitials were observed. The ...

The problem of radiation defect accumulation modeling is considered. The analysis is carried out for models describing basic processes and phenomena taking place during crystal irradiation, namely the genetic defects of recharging and recombination, displacement defect formation and ionization, as well as the limitation of these ...

This grant investigated various aspects of defect-engineered compound semiconductor films and heterostructures. The research studied in detail the impact of intentional defect introduction into semiconductor heterojunction device structures. The impact of...

... state with interstitial 0 although these complexes apparently are ... HEAT TREATMENT, IMPURITIES, NUCLEATION, OXYGEN, RADIATION EFFECTS ...

In silicon processing technology one of the most important current objectives is to achieve a controlled impurity doping in the crystal. Point defects and defect complexes present in the crystal influence in an important way the electrical activity and th...

This report is the summary of the third workshop on the role of point defects and defect complexes in silicon device processing. The workshop was organized: (1) to discuss recent progress in the material quality produced by photovoltaic Si manufacturers, (2) to foster the understanding of point defect issues in Si ...

Abstracts are presented of 24 papers, arranged under the following session/panel headings: defects and impurities in commercial photovoltaic Si substrates, point defects and point defect processes, impurity gettering for Si solar cells, gettering in Si solar cells, and passivation of impurities and defects.

Abstracts are presented of 24 papers, arranged under the following session/panel headings: defects and impurities in commercial photovoltaic Si substrates, point defects and point defect processes, impurity gettering for Si solar cells, gettering in Si solar cells, and passivation of impurities and defects.

... The results show that the magnitudes of the defect energies in a (111) plane are in descending order, antiphase boundary (APB), complex stacking ...

... Title : Analytical Prediction of Defects Occurrence in Simple and Complex Forgings. Descriptive Note : Technical rept. Apr 69-Mar 70,. ...

... Title : Analytical Prediction of Defects Occurrence in Simple and Complex Forgings. Descriptive Note : Technical rept. Mar 68-Apr 69,. ...

... Title : A Frontal Attack on Limiting Defects in Nitrides: Theory and Computations. ... Mg-H complexes; a critical assessment of the prospects of codoping ...

We report photoluminescence (PL) results to 65kbar (at 8K) on n-type electron irradiated ZnSe containing high densities of isolated Zn vacancies (V_Zn) and donor-V_Zn complexes (A-centers).^1 Isotropic pressure is applied using a diamond-anvil cell with He medium, and laser excitations above and below the ZnSe bandgap (2.82eV) are employed. The 1 atm. ...

The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silico...

This report is a summary of a workshop hold on August 24--26, 1992. Session 1 of the conference discussed characteristics of various commercial photovoltaic silicon substrates, the nature of impurities and defects in them, and how they are related to the ...

We propose a physical model for diffusion of H in Si containing impurities and defects. The diffusion occurs via several parallel mechanisms, involving complex formation (trapping) and dissociation (detrapping) at impurities and defects, hopping in lattic...

From the marked dependence of the observed A sub 1 concentration on Group III atom doping, it appears that the defect contains a Group III atom (Ga, In, or Al). It is likely that the Group III atom is complexed with an intrinsic defect such as a vacancy o...

Orientational defects in hexagonal ice were investigated using molecular dynamics simulations. Energy relaxation during L- and D-defect migration was shown to be associated with improved alignment of water molecules along the local electric fields. Two new forms of defects, an ``L+D complex,'' and a ``5+7 ...

The defect structure in CoO is examined in an embedded-molecular-cluster model. The point-defect model with isolated vacancies on either metal or oxygen sites is evaluated and compared with more complex defect structures. We calculate the electronic structure of 4:1 interstitial defects and ...

The objective of this work is to study of the reflection of the fundamental torsional mode T(0, 1) from three dimensional defects in pipes with different shapes. Firstly, flat-bottomed defects with different surface profiles have been analyzed, and then the reflection from varying depth profile defects has been studied. The results ...

Defects of the nasal dorsum or sidewall can result from trauma, congenital lesions, extirpation of neoplasms, or iatrogenic injuries. Simple techniques are often used to reconstruct defects in this area with excellent outcomes. Complex defects require more sophisticated techniques including multilayer closures ...

The quantum mechanical states of hydrogen and deuterium in pure and defected nickel have been calculated using the effective medium theory. The defects considered include monovacancies, the substitutional In impurity, a complex of four vacancies, and a co...

Corynebacterium glutamicum is an aerobic bacterium that requires oxygen as exogenous electron acceptor for respiration. Recent molecular and biochemical analyses together with information obtained from the genome sequence showed that C. glutamicum possesses a branched electron transport chain to oxygen with some remarkable features. Reducing equivalents obtained by the oxidation of various ...

... FIELD NDT METHODS AND THE COMPLEX IMPEDANCE OF A SENSOR PLACED NEAR A DEFECT FOR EDDY CURRENT NDT TECHNIQUES. ...

... flux during growth should have increased the antimony antisite defects. In addition to a deep acceptor complex, a deep level donor complex can ...

Purple Cu(A) centers are a class of binuclear, mixed-valence copper complexes found in cytochrome c oxidase and nitrous oxide reductase. An engineered Cu(A) protein was formed by replacing a portion of the amino acid sequence that contains three of the ligands to the native type I copper center of Pseudomonas aeruginosa azurin with the ...

Reconstruction of a midfacial defect can represent a formidable challenge for the reconstructive surgeon. Attesting to both the variety and the complexity of midfacial defects, numerous different classification schemes have been proposed, and are reviewed in this article. The approach to reconstruction can be simplified, however, by ...

Light-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H{sub 2}{sup {asterisk}} defect in c-Si and their energy ...

Synthetic defects are an important tool used for characterizing the performance of nondestructive evaluation techniques. Viscous material-filled synthetic defects were developed for use in vibrothermography (also known as sonic IR) as a tool to improve inspection accuracy and reliability. This paper describes how the heat-generation response of these VMF ...

The Cherenkov Complex system (CC-system) in the E-802 experiment at AGS was successfully operated in the heavy in running a AGS. Brief description of the system is given. Preliminary obtained particle spectra for pions. Kaons, and protons near mid-rapidity region in 14.5 A/center dot/GeV Si + Au collisions are presented. The spectra shape and the relative ...

xHigh resolution photoluminescence (PL) and infrared optical quenching measurements were performed to study the recombination mechanisms in CdTe:I epilayers grown by molecular beam epitaxy and in bulk CdTe and Cd_{1-x}Zn_{x}Te. Sample measurements were performed over the temperature range from 4.8 K to 300 K. The PL technique is a sensitive, non-contact, and non-destructive method to investigate ...

OEIS complex refers to a combination of defects consisting of omphalocoele, exstrophy of the cloaca, imperforate anus, and spinal defects. The incidence of the OEIS complex is very rare, estimated to occur in 1 of 200,000-400,000 pregnancies. The aetiology of the OEIS complex is still unclear, ...

The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silicon solar cells; impurity/defect passivation; new concepts in silicon growth: improved initial quality ...

The variable retention time phenomenon has recently been highlighted as an important issue in dynamic random access memory (DRAM) technology. Based on electrically detected magnetic resonance and simulation studies, we suggest that a single Si vacancy-oxygen complex defect is responsible for this phenomenon, when the defect is embedded ...

The transmittivity spectra of a one-dimensional magnetic photonic crystal with a complex defect layer composed of an electro-optic and magneto-optic material is investigated theoretically. The influence of the position of the defect layers as well as the presence of a permanent external electric field on the transmittivity is ...

This article describes a complex and not previously reported combination of congenital cardiac defects. Echocardiography showed dilation of right and left chambers, accompanied with patent ductus arteriosus, persistence of the left cranial vena cava, atrial septal defect (ASD), subaortic stenosis, and tricuspid dysplasia. The ...

This article describes a complex and not previously reported combination of congenital cardiac defects. Echocardiography showed dilation of right and left chambers, accompanied with patent ductus arteriosus, persistence of the left cranial vena cava, atrial septal defect (ASD), subaortic stenosis, and tricuspid dysplasia. The ...

Spina bifida is the most common of the neural tube defects, which include myelomeningocele, encephalocele, and anencephaly. Spina bifida is a complex and multisystem birth defect, in which one or more vertebral arches may be incomplete. This article discusses the sensory and motor impairments, neurologic disorders, orthopedic and ...

Data are presented for additively colored KI:Na, which identifies the (F(2))(A) absorption and emission bands as peaking at 1.03 and 1.62 microm, respectively. These transitions differ from those previously attributed to this defect. (F(2)(+))(A) centers also were produced and found to absorb near 1.52 microm and emit near 2.36 microm. ...

Formation energies of various intrinsic defects and defect complexes in ZnO have been calculated using a density-functional-theory-based pseudopotential all-electron method. The various defects considered are oxygen vacancy (VO), zinc vacancy (VZn), oxygen at an interstitial site (Oi), Zn at an interstitial site ...

, the adipose sarcoglycan complex associates with sarcospan and laminin binding dystroglycan. Using multi- ple demonstrate that -sarcoglycan null mice, which lack the sarcoglycan complex in adipose tissue and skeletal mus assessments of disease severity in Duchenne muscular dystrophy patients (3). Association of adipose tissue

The conserved oligomeric Golgi (COG) complex consists of eight subunits that are thought to be involved in vesicle tethering. Available mutants with the mutations in COG complex subunits exhibit defects in basic Golgi functions: protein glycosylation and ...

The properties of a number of hydrogen-related complexes in crystalline Ge and Si are reviewed. Hydrogen is shown to form electrically active as well as neutral complexes with native defects and impurities in germanium, silicon and several III-V compound ...

Variation in component properties and dimensions is a widely recognized factor in product defects which can be quantified and controlled by Statistical Process Control methodologies. Our studies have shown, however, that traditional statistical methods ar...

Purity Metals Working with low purity metals Electrical properties of II-VI and I-III-VI2 compounds determined by Native Defects and Defect Complexes Appear to be tolerant to...

Gas desorption and positron annihilation techniques have been employed to study the evolution of nitrogen associated defects in nitrogen irradiated metals: Fe, Ni, Mo and W. Nitrogen in these metals has a rather high affinity to vacancy type defects. The ...

we have used infrared spectroscopy with polarized light and we have compared the uniaxial stress ..... Fermi level we find that any radiation-induced defect level must ... as is usually the case for irradiated n-type germanium, a deep ...

The goals of this research were to study specific defect configurations in Hg(0.79)Cd(0.21)Te(MCT), using perturbed angular correlation (PAC) measurements, with emphasis on the defect consisting of vacancies trapped at the donor impurity indium; secondari...

This goals of this research were to study specific defect configurations in Hg(0.79)Cd(0.21)Te (MCT), using perturbed angular correlation (PAC) measurements, with emphasis on the defect consisting of vacancies trapped at the donor impurity indium; seconda...

The performance of Japanese products in the marketplace points to the dominant role of quality in product competition. Our focus is motivated by the tremendous pressure to improve conformance quality by reducing defects to previously unimaginable limits i...

This book collects papers on semiconductor materials. Topics include: oxygen precipitation formation, silicon, boron complexes in silicon, radiation-induced defects in indium antinomide, gallium arsenides, vapor phase epitaxy, gallium and indium phosphides, crystal doping, and deep level transient spectroscopies.

Page 1. Page 2. Page 3. Page 4. Page 5. Page 6. Page 7. Page 8. Page 9. Page 10. Page 11. Page 12. Page 13.

The major research efforts described in this report involve the study of magnetic interactions in complex alkali-transition metal fluorides and the study of rare earth-defect interactions in cadmium fluoride, the latter having led to the development of an...

of a defect. "Supplies", as used in this clause, means the end items furnished by the Contractor and related supplies furnished under this contract will be free from defects in material and workmanship's plant and return. (6) All implied warranties of merchantability and "fitness for a particular purpose

A summary of the particle production measurements in relativistic nucleus-nucleus collisions by the E802/E859/E866 Collaboration at the Brookhaven National Laboratory AGS-Tandem accelerator complex is presented. These results have been collected since 198...

A method suggested earlier for searching for sources of vibroactivity and maintenance defects in complex mechanical structures has been experimentally implemented. The method is based on joint use of a numerical finite-element design model and coherent vibration measurement at several control points. The search for defects is ...

Traditional manufacturing practice has depended upon Statistical Process Control (SPC) to eliminate defects. However, our research demonstrates that these sampling based methods significantly underestimate the tails of a distribution. As a consequence of the limitations of SPC, mistakes require different methods of control to achieve defect rates in the ...

Manufacture testing of digital integrated circuits is essential for high quality. However, exhaustive testing is impractical, and only a small subset of all possible test patterns (or test pattern pairs) may be applied. Thus, it is crucial to choose a subset that detects a high percentage of the defective parts and produces a low defective part level. ...

Disorder in spiral pattern arising in the counter-rotating Couette-Taylor flow has been investigated. It was revealed that in a certain range of flow control parameters, defects may be generated on the background of spirals periodically in time. Spatio-temporal structure of a single defect has been investigated in detail. A simple theoretical model based ...

Several surface defects can develop on automotive exterior panels during the forming operations. They alter the vehicle aesthetic and their severity increases with the decrease of sheet thickness. These defects are difficult to characterize experimentally and reproduce numerically because of their depth below 0.5 mm and the complexity ...

Excitons play a fundamental role in transporting energy in photonic materials. Understanding and controlling excitons dynamics through their interactions with activating impurities and lattice defects is key to improving scintillation and optical properties. Singles crystals of yttrium aluminum garnet (YAG) crystals doped with rare-earths were studied by positron annihilation, ...

Six cases of large defects of the scalp, skull, and dura following tumor ablation and radiation are presented. Each was accompanied by chronic infection in the irradiated defect. Efforts to reconstruct the resulting defects with local flaps were not successful. One-stage reconstruction was then accomplished in each case utilizing a ...

A one-step introduction of functional defects into a photonic crystal is demonstrated. By using a multi-beam phase-controlled holographic lithography, line-defects in a Bragg structure and embedded waveguides in a two-dimensional photonic crystal are fabricated. Intrinsic defect introduction into a 3-dimensional photonic crystal is ...

The dispersion of transition and alkaline-earth metals on defective graphenes is studied using first-principles calculations. The effect of vacancy defects on binding properties of metal atoms to the graphene and with hydrogen molecules is particularly investigated. It is shown that vacancy defects enhance efficiently the metal binding ...

Adams-Oliver syndrome is a rare congenital anomaly complex characterized by aplasia cutis congenita (ACC) and terminal transverse limb defects. We present a 9-year-old girl with a large, congenital scalp defect on her vertex, without underlying bone defect. Brachydactyly and syndactylia of her toes were also ...

Organized defect clusters in non-stoichiometric LiNbO? are known to dominate macroscale ferroelectric properties; yet the detailed nature of these defects is currently unknown. Here, the relative stabilities of various defect cluster arrangements of lithium vacancies around a niobium antisite in LiNbO? are determined using density ...

Advanced ultrasonic array techniques such as full matrix acquisitions provide considerable amount of data making possible by the use of suitable processing algorithms enhanced capability of defects imaging and therefore improved localization and sizing. In general the applied processing consists in a coherent summation of signals (synthetic focusing) based on a time of flight ...

Variation in component properties and dimensions is a widely recognized factor in product defects which can be quantified and controlled by Statistical Process Control methodologies. Our studies have shown, however, that traditional statistical methods are ineffective in characterizing and controlling defects caused by error. The distinction between error ...

Four well-defined indium-dopant/lattice-defect complexes and the non-complexed substitutional indium dopant have been observed by perturbed angular correlation (PAC) spectroscopy in cerium oxide. PAC is a nuclear hyperfine experimental method that detects...

Various diamonds were analyzed with photoluminescence (PL) spectra excited with synchrotron radiation in the wavelength range 160-250 nm. The emission of type IaAB diamond begins near 300 nm and extends to 700 nm; two broad lines with maximums about 419 and 469 nm correspond to energies 2.96 and 2.64 eV, respectively. The spectral features observed in the PL excitation spectra show two vibrational ...

Beams of radioactive ions implanted in semiconductors provide a unique means of establishing the chemical identity of point defects and of exploring the evolution of defects through several chemical species. We report results obtained for samples of Si implanted with either 193Hg or 197Hg. The defects produced were studied using ...

Olivine phosphates LiMPO4 (M=Mn, Fe, Co, Ni) are promising candidates for rechargeable Li-ion battery electrodes because of their energy storage capacity and electrochemical and thermal stability. It is known that native defects have strong effects on the performance of olivine phosphates. Yet, the formation and migration of these defects are not fully ...

We present an analysis of the catastrophic optical damage effect that is artificially provoked in 808 nm emitting broad area diode lasers by single current pulses. The kinetics of the sudden degradation process, monitored with a nanosecond temporal resolution, is linked to the damage pattern observed. This involves in situ tracing of emission power and hot-spot motion within the cavity as well as ...

Four well-defined indium-dopant/lattice-defect complexes and the non-complexed substitutional indium dopant have been observed by perturbed angular correlation (PAC) spectroscopy in cerium oxide. PAC is a nuclear hyperfine experimental method that detects interactions between a radioactive probe nucleus and nearby atoms. The magnitude ...

Four well-defined indium-dopant/lattice-defect complexes and the non-complexed substitutional indium dopant have been observed by perturbed angular correlation (PAC) spectroscopy in cerium oxide. PAC is a nuclear hyperfine experimental method that detects interactions between a radioactive probe nucleus and nearby atoms. The magnitude ...

Hydrogen related local vibrational modes (LVMs) of ZnO nanoparticles have been studied using Fourier transform infrared spectroscopy and Raman spectroscopy in as prepared and high temperature annealed samples. The obtained experimental results confirm the presence of cationic vacancies (VZn) in addition to unintentional hydrogen doping and their complex ...

A systematic study of electron-irradiation-induced defects in GaAs was carried out. The irradiation was performed at low temperature (4 K) with an incident energy of 2 MeV. Both, the defect formation and annealing behavior were studied in dependence on the fluence (10{sup 15}--10{sup 19} cm{sup {minus}2}) in undoped, n-, and p-doped GaAs. ...

The structures and energies of point defects and point defect complexes in B 2 iron aluminium FeAl are calculated using a local density functional theory based method with large supercells. Particular emphasis is given to pseudopotential quality, choice of chemical potentials used to calculate defect formation ...

... mechanism for the strain-potential effect of silver iodide was postulated ... point defects from impurity ion-cation vacancy complexes through movement ...

... complex webs of wires. Defects in wiring during brain development could lead to epilepsy. After a head injury due to an accident or a stroke, the brain repairs itself by making new wiring. If the ...

... Corporate Author : Personal Author(s) : HAWKER,BM ; NEWTON,K. ; WEIN,AP. Report Date : SEP 1985. Pagination or Media Count : 15. ...

... include: Dynamical systems, numerical methods for ... 2006) " Finite dimensional model for defect ... computations: 1D and 2D Nonlinear Coupled Mode ...

... Corporate Author : INSTITUT DE RECHERCHE DE L'HYDRO-QUEBEC VARENNES*. Personal Author(s) : RAYNAUD, GM ; MORIN, F. ...

... chemistry (Synthesis and crystal chemistry of complex palladium oxides, Crystal structure of Mg3TeO6, Elastic constants of beryl); Defects and ...

... GaN. Electronic defects were characterized in n-type GaN by deep level transient spectroscopy (DLTS) and optical-DLTS. ...

... in inspection system for flaw detection on complex shaped surfaces, monitoring of ... Several examples of surface defect, texture and contour ...

... DT IC Amok FI F -TF 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) SEP a ... 14. SUBJECT TERMS 15. NUMBER OF PAGES ...

... and stability of intentionally added and unintentional compensating donor defects in p-type and its material, (2) the role hydrogen complexes play in ...

... O'Connor WJ, McCartan B, Miller S, McMenamin J, Watson R (1997) Developmental enamel defects in tuberous sclerosis: ...

... certain chemical impurities, native defects such as vacancies, complexes involving native ... Gold introduces a deep acceptor level and a deep donor ...

These defects are essential for passive transport of simple ions across ... Passive transport of neutral molecules is, in general, more complex than ...

Sep 5, 2011 ... Thus the predominance of the L-his aptamers was not due to some cryptic defect ... A more complex isoleucine aptamer with a cognate triplet. ...

... secretory vesicles on one side of the Flemming body (arrows in 2 and 3, Inset). In panel 1, most luminal-GFP signal is in Golgi complexes (Gi and ...

Using hybrid functional theory together with experimental measurements, we investigate the influence of gallium impurities and their complexes on electrical properties of ZnO. In contrast to the behavior of isolated Ga impurities and native defects, the calculated formation energies of Ga complexes are consistent with our experimental ...

A theoretical model of radiation-induced amorphization of ordered intermetallic compounds is developed. The mechanism is proposed to be the buildup of lattice defects to very high concentrations, which destabilizes the crystalline structure. Because simple point defects do not normally reach such levels during irradiation, a new defect ...

To localize point defects that occur inside numerous interconnection layers, a multilevel Checkerboard Test Structure is presented. Here, the large defect sensitive area inside boundary pads is divided into many distinguishable subchips. To provide test structure data that reflect yield of product chips, each subchip layout will be customized to real ...

Self�interstitial--hydrogen complexes in silicon and germanium . . . . . . . . 21 6.1 Experimental workThe Interaction of Hydrogen with Deep Level Defects in Silicon R. Jones, B. J. Coomer, J. P. Goss Interstitial Hydrogen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 The H # 2 defect

Simulation of point defects in high-density luminescent crystals: Oxygen in barium fluoride J. M June 1997; revised manuscript received 25 August 1997 Barium fluoride is an example of a high center is shown here to be the dissociation of a defect complex made up of an O2 ion bound to a fluoride

A microsurgical latissimus dorsi flap was performed for resurfacing a large soft tissue defect of the forearm with exposure of the vital structures and contaminated wound. Early coverage of a defect is a generally accepted concept to achieve a better functional result. The authors present a case report where a free latissimus dorsi flap with subsequent ...

a complex scheme of vacancy clustering for Fe, -,O. They suggest that large vacancy aggregates may assisted the formulation of the new cluster models. These methods yield reliable estimates of defect. The simulation uses lattice and defect potentials based on the ionic model, with simple analytical pair interac

on the biological defects of plants that are not restricted to a specific case. Therefore, a system based-specific applications. For example, the inclusion of all possible kinds of defects that could occur in plants would defect. The sorting process is complex. This is caused by the large natural variation between ...

We study the interaction of a mode propagating in a planar waveguide with a three--dimensional rectangular defect (protrusion or notch) in the structure. The scattering by the defect disturbes the propagation of the mode and light is coupled out of the waveguide. To investigate these phenomena we compute electric field distributions with the Green's tensor ...

Hydrogen-atom number in platinum-hydrogen complexes in silicon J.-U. Sachse and J. Weber Max January 1999 Four different platinum-hydrogen complexes are identified in silicon by transient capacitance in the defect complexes. Three of the platinum-hydrogen complexes are electrically active, and ...

The performance of Japanese products in the marketplace points to the dominant role of quality in product competition. Our focus is motivated by the tremendous pressure to improve conformance quality by reducing defects to previously unimaginable limits in the range of 1 to 10 parts per million. Toward this end, we have developed a new model of conformance quality that ...

In the past, several midline defects have been associated with Down syndrome (DS) on a regular basis, e.g. heart defects, cleft lip and palate, neural tube defects, omphalocele and anal atresia. The exstrophy-epispadias complex (EEC) represents a rare midline defect, rarely described in ...

Theoretical models that have been successful in explaining observations of other defect phenomena are used to identify the native nonradiative recombination center in GaP. It is concluded to be the complex V/sub Ga/sup -//P/sub Ga/sup 2 +//V/sub Ga/sup -// acting via a configuration coordinate mechanism where V/sub Ga/ is indicative of a Ga vacancy and ...

First principles calculations have been performed to investigate defect equilibria of the silicon-boron pair complex (Si-B) in a GaAs matrix. For several charge states, the formation energies were evaluated within the Car-Parrinello scheme considering cation and anion substitutional site defects. The calculations, including the full ...

... Oxygen vacancies and the association of defect complex plays a ... is useful to obtain information on the behaviour of solutes or complexes with an ...

... to study specific defect configurations in Hg(0.79)Cd(0.21)Te ... In-V sub Hg complexes were seen to interact with H ... levels up to 10(exp 17)In/cu cm. ...

... to study specific defect configurations in Hg(0.79) Cd(0.21) Te ... In-V (Hg) complexes were seen to interact with H ... levels up to 10(exp 17)In/cu cm. ...

A technique for combining statistical information related to integrated circuit fabrication defects with layout information to derive the computational complexity/confidence level equations for an integrated circuit is presented. Given an available comput...

A series of calculations was performed on the interactions of lattice defects, in particular on the annealing in gold of quenched-in vacancies and vacancy-impurity complexes during a constant heating rate temperature excursion. The calculations were carri...

We study structural and electronic properties of various intrinsic and extrinsic defects in CdTe based on first-principles calculations. The focus is given to the role of these defects in the carrier compensation in semi-insulating CdTe, which is essential for the CdTe-based radiation detectors. The semi-insulating behavior of CdTe has been attributed to ...

Electrical measurements were used to study the irradiation effects and the annealing behavior of heavily As doped silicon on insulator samples implanted with 2 MeV Si{sup +} ions. It is found that implantation induces a strong reduction of the carrier density, which markedly depends on the concentration of As. Annealing at temperatures in the range 600-800 deg. C, by rapid thermal treatments or ...

We investigate the effect of phosphorus doping on the atomic structure of B-related defects in crystalline Si through first-principles pseudopotential calculations. We find that a B-P complex is the most stable defect, with a binding energy of about 0.3eV, compared with isolated B and P ions. When Si self-interstitials (Is) are ...

Owing to the ability of the positron to annihilate from a variety of defect-trapped states, positron annihilation spectroscopy (PAS) has been applied increasingly to the characterization and study of defects in materials in recent years. In metals particularly, it has been demonstrated that PAS can yield defect-specific information ...