a-Si/a-SiGe/a-SiGe flexible PV products on stainless steel The development of space solar cells on polymer substrate has leveraged the terrestrial technology Green Power...

This report describes work performed by Energy Conversion Devices, Inc. (ECD) under a 3-year, cost-shared amorphous silicon (a-Si) research program to develop advanced technologies and to demonstrate stable 14%-efficient, triple-junction a-Si alloy solar cells. The technologies developed under the program will then be incorporated into ...

The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high ...

Amorphous silicon alloy based triple junction 0.1 m[sup 2] modules with initial efficiencies greater than 11% have been produced using manufacturing equipment. Scale-up of equipment to process substrates 0.56 m[sup 2] in area is nearly complete.

This report describes a roll-to-roll triple-junction amorphous silicon alloy PV manufacturing technology developed and commercialized by Energy Conversion Devices (ECD) and United Solar Systems. This low material cost, roll-to-roll production technology h...

This report describes a research program to investigate hydrogenated amorphous silicon-germanium alloys (a-Sil-xGex:H) for solar-cell applications. Specifically, studies were carried out to determine why these low-band-gap alloys exhibit photo-electronic properties inferior to those of hydrogenated amorphous silicon (a-Si:H). Two ...

Energy Conversion Devices, Inc. (ECD) has designed and constructed a 2 Megawatt (mW) manufacturing line that produces triple-junction spectrum-splitting a-Si alloy solar cells in a continuous roll-to-roll process. This manufacturing line has reliably and consistently produced high efficiency solar cells. We have demonstrated the ...

This report describes Solarex`s work to advance its photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance, and expand the Solarex commercial production capacity. Solarex will meet these objectives by improving the deposition and quality of the transport front contact; optimizing ...

This report describes Solarex's work to advance its photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance, and expand the Solarex commercial production capacity. Solarex will meet these objectives by improving the deposition and quality of the transport front contact; ...

The objective of this subcontract over its three-year duration is to advance Solarex`s photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance and expand the Solarex commercial production capacity. Solarex shall meet these objectives by improving the deposition and quality of the ...

This report describes work performed by Energy Conversion Devices, Inc. (ECD) under a 3-year, cost-shared amorphous silicon (a-Si) research program to develop advanced technologies and to demonstrate stable 14%-efficient, triple-junction a-Si alloy solar ...

The authors have characterized the defect state structure in a series of device quality glow discharge intrinsic, n-type doped, and p-type doped a-Si,Ge:H alloys with Ge content ranging from 20 at.% to 35 at.%. Their experimental methods include capacitance profiling, transient junction photocurrent and photocapacitance measurements. These methods have ...

Thin semiconducting films of hydrogenated amorphous silicon (a-Si:H) and its carbon alloy (a-Si:C:H) were applied to gas microstrip detectors in order to control gain instabilities due to charges on the substrate. Thin ((approximately)100nm) layers of a-S...

The electrical conduction across direct contacts between indium-tin oxide (ITO) and the newly developed Al-Ni alloys, used for amorphous silicon thin-film transistors (a-Si TFTs) in liquid crystal displays (LCDs), has been studied. The ITO/Al-Ni alloy interfaces were examined by both electrical measurements using nanoprobes and ...

The present conference considers topics in the fields of thin film transistors, the physics of amorphous silicon (a-Si) devices and photoreceptors, and image and power sensors. Attention is given to a-Si FET requirements for LCD pixel switches, high barrier rectifying junctions with a-Si alloy electrodes and their application to LSI FETs, bulk limitation ...

The objective of this subcontract over its three-year duration is to advance Solarex`s photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance and expand the Solarex commercial production capacity. Solarex shall meet these objectives by improving the deposition and quality of the ...

This report presents results of research on amorphous silicon- germanium alloys for tandem solar-cell applications. A study was completed of a-Si{sub 1 {minus} x}Ge{sub x}:H and a-Si{sub 1 {minus} x}Ge{sub x}:H:F alloys. This included extensive structural examination by transmission electron spectroscopy, gas evolution, and differential scanning ...

The goal of this project is to determine the fundamental growth mechanisms of hydrogenated amorphous silicon (a-Si:H) and related alloys. This is important because thin films of these materials must have the high quality and stability required for 15%-efficient solar cells and be produced at high rates and low cost over large areas: achieving these ...

Under the PVMat 2A Program, Energy Conversion Devices, Inc. (ECD) has performed manufacturing technology development work utilizing its proprietary continuous roll-to-roll triple-junction a-Si alloy solar cell production line. Among the accomplishments achieved under this program, ECD demonstrated the production of ...

This document reports on work performed by Energy Conversion Devices, Inc. (ECD) during Phase 1 of this subcontract. During this period, ECD researchers: (1) Completed design and construction of new, improved substrate heater; (2) Tested and verified improved performance of the new substrate heater in the pilot machine; (3) Verified improved performance of the new substrate heater in the ...

This report compares the two methods of determining the performance of PV modules. The methods translate module performance characterized in a laboratory to actual or reference conditions using slightly different approaches. The accuracy of both methods is compared for both hourly and daily energy production over a year of data recorded at NREL in Golden, CO. The comparison of ...

This report describes work done in Phase 2 of a 3-year project to advance Energy Conversion Devices, Inc. (ECD), roll-to-roll, triple-junction photovoltaic manufacturing technologies, to reduce the module production costs, to increase the stabilized module performance, and to expand the commercial capacity utilizing ECD technology. Major accomplishments in Phase 2 include: (1) ...

The density of localized gap states in the bulk and in the near-surface region of amorphous hydrogenated silicon (a-Si:H) was measured for non oxidized undoped, B-doped and P-doped samples as well as for films with low carbon (C) and germanium (Ge) conten...

The objectives for the University of Toledo are to: (1) establish a transferable knowledge and technology base for fabricating high-efficiency triple-junction a-Si-based solar cells, and (2) develop high-rate deposition techniques for the growing a-Si-based and related alloys, including poly-Si, c-Si, a-SiGe, and ...

This report describes work to produce alloys of a-Si{sub 1-x}Ge{sub x}:H of improved photoelectronic quality by plasma-enhanced chemical vapor deposition (PECVD). The goal was to discover optimum preparation conditions for the end-component, a-Ge:H, to establish whether modification of the usual practice of starting from a-Si:H preparation conditions was ...

This report describes work to produce alloys of a-Si[sub 1-x]Ge[sub x]:H of improved photoelectronic quality by plasma-enhanced chemical vapor deposition (PECVD). The goal was to discover optimum preparation conditions for the end-component, a-Ge:H, to establish whether modification of the usual practice of starting from a-Si:H preparation conditions was ...

This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell ...

The transport properties of a-Si,Ge:H,F/a-Si:H,F superlattices are analyzed from the viewpoint of their use as low-bandgap absorbers in solar cells. Photo-to-dark conductivity ratios measured perpendicular to the layer planes are reported for a bandgap range from 1.26 eV to 1.45 eV. A recently developed theory of carrier transport in superlattices is used to establish the photo-to-dark ...

... THE PROPERTIES OF TITANIUM ALLOY CASTINGS,. ... CASTING, COPPER ALLOYS, ALUMINUM ALLOYS, TIN ALLOYS, SURFACE PROPERTIES. ...

[9,10]. After careful analysis of these results, we now have a viable alternative explanation for the oxygen induced changes in a- Si,Ge:H alloys. Specifically, we believe our...

fractions of 0, 15, 29, 47, 63, 81, and 100at.% were obtained from Yueqin Xu and Harv Mahan at NREL. These 1.2 to 1.6 micron thick alloy films were deposited onto n + a-Si:H...

This report describes work to evaluate low-mobility-gap a-Si,Ge:H alloy films. Results are based on junction capacitance techniques of admittance spectroscopy, transient photocapacitance (and photocurrent), and drive-level capacitance profiling. Eight a-Si,Ge:H alloy samples grown by photo-CVD encompassed the range ...

The author studied the nonlinear effects of the electric field on the drift mobilities of both electrons and holes in a series of undoped hydrogenated amorphous silicon (a-Si:H) and silicon-germanium alloy specimens. The author measured the transient photocurrents in pin diode structures as a function of electric field and temperature. Time-of-flight and ...

This report describes work performed to develop improved p-type wide-band-gap hydrogenated amorphous silicon-carbon alloy (a-Si(sub 1-x)C(sub x:)H) thin films and interfaces for the ''top junction'' in hydrogenated amorphous silicon (a-Si:H)-based p-i-n s...

Solarex has just completed building a plant in James City County, Virginia that has the capacity to produce 10 MW per year of multijunction amorphous silicon PV modules. The plant will start commercial production of 8.6ft{sup 2} tandem modules in early 1997. The tandem device structure consists of two stacked p-i-n junctions, a front junction containing amorphous silicon and a ...

Solarex has just completed building a plant in James City County, Virginia that has the capacity to produce 10 MW per year of multijunction amorphous silicon PV modules. The plant will start commercial production of 8.6 ft2 tandem modules in early 1997. The tandem device structure consists of two stacked p-i-n junctions, a front junction containing amorphous silicon and a back ...

This subcontract report describes how Energy Conversion Devices, Inc., has developed and built 7 generations of roll-to-roll amorphous silicon PV production equipment. In the ECD/United Solar production process, we deposit about a 1-mm-thick, 12-layer coating consisting of a metal/oxide backreflector, a 9-layer a-Si/a-SiGe ...

Energy Conversion Devices, Inc. (ECD) has developed and built 7 generations of roll-to-roll amorphous silicon PV production equipment. In the ECD/United Solar Ovonic production process, we deposit about a 1-mm-thick, 12-layer coating consisting of a metal/oxide backreflector, a - layer a-Si/a-SiGe alloy ...

Thin semiconducting films of hydrogenated amorphous silicon (a-Si:H) and its carbon alloy (a-Si:C:H) were applied to gas microstrip detectors in order to control gain instabilities due to charges on the substrate. Thin ({approximately}100nm) layers of a-Si:H or p-doped a-Si:C:H were placed either over or under the ...

Amorphous silicon alloy based triple junction solar cells and modules with initial efficiencies of approximately 11% have been developed. These devices are expected to exhibit less than a 20% loss before stabilizing. An improved transparent front contact and silicon carbide alloys promise to raise conversion efficiencies to 13%--14%.

This report contains the results of research on a-Si,Ge:H alloys (1) to study a-Si,Ge:H alloy films produced by dual magnetron sputtering from separate Si and Ge targets for photovoltaic device applications; (2) to determine the deposition conditions that...

Papers are presented on efficient multijunction monolithic cascade solar cells, high efficiency silicon solar cells, point contact silicon cells, and space solar cell research. Also considered are photovoltaic power plants, the reliability of photovoltaic modules, the continuous fabrication of amorphous silicon solar cells on polymer substrates, and the density of states of amorphous silicon. ...

This report describes work done under a 3-year program to advance ECD`s roll-to-roll, triple-junction photovoltaic manufacturing technologies, to reduce the module production costs, to increase the stabilized module performance, and to expand commercial capacity utilizing ECD technology. The specific 3-year goal is to develop advanced large-scale manufacturing technology ...

A Cu alloy/Cu alloy oxide bilayer structure was formed on an n +-a-Si:H substrate using a single Cu alloy target. It was employed for the source/drain electrodes in the fabrication of a-Si:H thin-film transistors with good electrical performance, high thermal stability, and good adhesion. Transmission electron ...

The overall objective of this subcontract over its two-year duration is to continue the advancement of Energy Photovoltaics, Inc.'s (EPV) a-Si production manufacturing technology and improve the production equipment used in manufacturing. This will allow ...

This report describes work to improve the efficiency of large-area, multi-junction amorphous silicon (a-Si) alloy modules. Equipment capable of producing modules up to 0.74 m{sup 2} in area is on line and process development has begun. Preliminary cost analysis/reduction has begun to ensure that these development efforts will result in a commercialization ...

A study is presented of a series of high quality PECVD a-Si{sub 0.33}Ge{sub 0.67} films, produced by cathodic deposition, in which small concentrations of PH{sub 3}, B{sub 2}H{sub 6} or air impurities were added during deposition. The quantum efficiency-mobility-lifetime product ({eta}{mu}{tau}) increases, and the ambipolar diffusion length (L{sub amb}) ...

This annual describes the research results of the JPL Flat Plate Solar Photovoltaic Research Project, which is sponsored by the US Department of Energy and is part of the National Photovoltaics Program to initiate a major effort toward the development of cost- competitive solar arrays. Electron cyclotron resonance (ECR) microwave plasma depositions of a-Si:H and a-SiC:H films have been ...

The principal objective of this program is to conduct research on semiconductor materials and non-semiconductor materials to enhance the performance of multibandgap, multijunction, large-area amorphous silicon-based alloy modules. The goal for this program is to demonstrate stabilized module efficiency of 12% for multijunction modules of area greater than 900 cm(sup 2). ...

The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated ...

Hydrogenated amorphous silicon-carbon alloys ({ital a}-SiC:H) with band gaps around 1.9 eV have been prepared using trisilylmethane (TSM) as the carbon source by plasma-enhanced chemical vapor deposition. Compared to {ital a}-SiC:H alloys prepared from the conventional CH{sub 4}/SiH{sub 4} mixture, the TSM-based ...

Significant progress has been made recently at ECD (Energy Conversion Devices, Inc.), in developing new manufacturing technologies for a-Si (amorphous silicon) photovoltaics. In a 2 MW continuous roll-to-roll a-Si PV (photovoltaics) manufacturing plant, designed and constructed by ECD, we have advanced ECD{close_quote}s PV technology and demonstrated the manufacturing of 4 ...

Significant progress has been made recently at ECD (Energy Conversion Devices, Inc.), in developing new manufacturing technologies for a-Si (amorphous silicon) photovoltaics. In a 2 MW continuous roll-to-roll a-Si PV (photovoltaics) manufacturing plant, designed and constructed by ECD, we have advanced ECD's PV technology and demonstrated the manufacturing of 4 ft2 PV modules ...

We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer...

We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.

This report describes results achieved during phase 1 of a three-phase subcontract to develop and understand thin-film solar cell technology associated to CuInSe(sub 2) and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin fil...

This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and...

This report describes research to study the effects of defects, impurities, and interfaces on the performance of photovoltaic (PV) devices, particularly hydrogenated amorphous silicon (a-Si:H) and related alloys. The studies of a SI:H and related alloys i...

This report describes the project by Energy Conversion Devices, Inc. (ECD) and its American joint venture, United Solar Systems Corp. (United Solar), to develop and commercialize a roll-to-roll triple-junction amorphous silicon alloy PV manufacturing tech...

We demonstrated that the remote PECVD process can be used to deposit heavily doped n-type and p-type a-Si:H thin films. We optimized conditions for depositing undoped, near-intrinsic and heavily doped thin films of {mu}c(microcrystalline)-Si by remote PECVD. We extended the remote PECVD process to the deposition of undoped and doped a-Si,C:H and {mu}c-Si,C ...

We demonstrated that the remote PECVD process can be used to deposit heavily doped n-type and p-type a-Si:H thin films. We optimized conditions for depositing undoped, near-intrinsic and heavily doped thin films of [mu]c(microcrystalline)-Si by remote PECVD. We extended the remote PECVD process to the deposition of undoped and doped a-Si,C:H and [mu]c-Si,C ...

A new method of maintaining window transparency in photochemical vapor deposition (photo-CVD) has been developed in which the window is continuously etched clean during the deposition process. This technique is demonstrated in the deposition of /ital a/-Si:H(F) by direct photo-CVD of Si/sub 2/H/sub 6/ using XeF/sub 2/ as an etchant. XeF/sub 2/ is also used to clean the chamber ...

We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in ...

The work carried out by the University of Oregon Under this subcontract focused on the characterization and evaluation of low-gap (a-Si,Ge:H) alloy materials and on issues related to overall stability in the mid-gap (a-SiH) materials. First, researchers characterized an extensive series of Uni-Solar a-Si,Ge:H ...

The design and development of microbolometer passive infrared (PIR) security sensors at Electro-optic Sensor Design (EOSD) has previously been described at the present and other SPIE forums. The primary object of this patented technology is to provide a higher performance option to current pyroelectric PIR sensors, including longer detection range, detection of developing fire and machinery ...

... Descriptors : *METAL PLATES, *PRODUCTION, *TITANIUM ALLOYS, *WELDING, ALUMINUM ALLOYS, CHROMIUM ALLOYS, PROCESSING ...

This report describes works to use transient photocapacitance and photocurrent measurements to determine the deep defect distribution and processes in low-band-gap a-Si,Ge:H alloys. Samples for these studies were produced by the photochemical vapor deposition (photo-CVD) growth method and were obtained through a collaboration with researchers at the ...

This report describes works to use transient photocapacitance and photocurrent measurements to determine the deep defect distribution and processes in low-band-gap a-Si,Ge:H alloys. Samples for these studies were produced by the photochemical vapor deposition (photo-CVD) growth method and were obtained through a collaboration with researchers at the ...

This report describes work performed by the University of Oregon focusing on the characterization and evaluation of amorphous semiconductor materials produced by novel deposition conditions and/or methods. The results are based on a variety of junction capacitance techniques: admittance spectroscopy, transient photocapacitance (and photocurrent), and drive-level capacitance profiling. These ...

a 5MW p /y facility using EPV's massive parallel processing approach without use of automation. For these calculations, the average stabilized module power was assumed to be 40W....

This report summarizes Energy Conversion Devices, Inc.`s (ECD) research under this program. ECD researchers explored the deposition of a-Si at high rates using very-high-frequency plasma MHz, and compared these VHF i-layers with radio-frequency (RF) plasma-deposited i-layers. ECD conducted comprehensive research to develop a {mu}c-Si p{sup +} layer using VHF deposition process with the objectives ...

Solarex, a business unit of Amoco/Enron Solar, is scaling up its a-Si:H/a-SiGe:H tandem device technology for the production of 8 ft2 modules. The current R&D effort is focused on improving the performance, reliability and cost-effectiveness of the tandem junction technology by systematically optimizing the materials and interfaces in small-area ...

... Accession Number : ADD101890. Title : PRODUCTION AND METALLOGRAPHY OF ALLOY POWDERS,. Corporate Author : ...

... Descriptors : *METAL COATINGS, *PROCESSING ... NICKEL ALLOYS, PRODUCTION, REFRACTORY ... TANTALUM ALLOYS, VAPOR PLATING. ...

Solar cells fabricated using plasma-deposited a-Si:H alloys can be seriously degraded by the incorporation of certain impurities during deposition of the a-Si:H materials. Nominally intrinsic layers are adversely affected by the addition to the plasma of air, N/sub 2/ + O/sub 2/ mixtures (although by neither N/sub 2/ nor O/sub 2/ separately), PH/sub 3/ or ...

Photoelectrochemical (PEC) water dissociation into hydrogen and oxygen at a semiconductor-liquid interface offers an environmentally benign approach to hydrogen production. We have developed an integrated PEC device using hydrogenated amorphous silicon carbide (a-SiC or a-SiC:H) material as photoelectrode in conjunction with an amorphous silicon ...

This paper discusses applications of the tight-binding method to: (i) localized anti-bonding states of Si-H groups in [ital a]-Si:H, and (ii) dangling bond defect states in [ital a]-Si,Ge:H alloys. The [ital a]-Si:H calculations demonstrate that anti-bonding states of Si-H groups with bond-angle distortions of ...

We have improved the quality of our narrow-bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV, having a photoresponse equal to or better than our plasma-enhanced CVD-grown alloys. We enhanced the ...

Thin ({approximately}1,000 {angstrom}) semiconducting films of hydrogenated amorphous silicon (a-Si:H) and its carbon alloy (a-Si:C:H) were applied to microstrip gas chambers in order to control gain instabilities due to charges in or on the substrate. The light sensitivity, which is defined as the ratio of light-to-dark conductivity, ...

ECD has made important progress in the development of materials, device designs, and manufacturing processes required for the continued advancement of practical photovoltaic technology{sub 1-23}. ECD has pioneered and continues further development of two key proprietary technologies, with significant potential for achieving the cost goals necessary for widespread growth of the photovoltaic market: ...

This report describes a roll-to-roll triple-junction amorphous silicon alloy PV manufacturing technology developed and commercialized by Energy Conversion Devices (ECD) and United Solar Systems. This low material cost, roll-to-roll production technology has the economies of scale needed to meet the cost goals necessary for widespread use of PV. ECD has ...

This report describes a 21-month project to demonstrate amorphous-silicon (a-Si) solar cells with high stabilized conversion efficiency. The objective was to develop a research program spanning material issues (more stable a-Si and better a-SiGe alloys) and device issues (more stable a-Si-based ...

This report describes work to develop a state-of-the-art electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) system. The objective was to understand the deposition processes of amorphous silicon (a-Si:H) and related alloys, with a best-effort improvement of optoelectronic material properties and best-effort stabilization of ...

This report describes work to develop a state-of-the-art electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) system. The objective was to understand the deposition processes of amorphous silicon (a-Si:H) and related alloys, with a best-effort improvement of optoelectronic material properties and best-effort stabilization of ...

We present femtosecond studies of photoexcited carrier dynamics in hydrogenated amorphous silicon and silicon-germanium alloys grown by the hot-wire assisted chemical vapor deposition (HWCVD) technique, which is promising for producing high-quality device-grade materials.

This book contains papers presented at the Twentieth IEEE Photovoltaic Specialists Conference. Some of the topics covered are: Issues and opportunities in space photovoltaics; A novel design for amorphous silicon alloy solar cells; New materials and new analysis method for high efficiency a-Si solar cells; and high efficiency GaAs solar cells fabricated on ...

Photovoltaic research conducted in four areas is described: semiconductor materials, high-efficiency cells, nonsemiconductor materials, and submodules. The major focus of semiconductor materials research was on improving the quality of wide-band-gap a-SiC:H alloys and narrow-band-gap a-SiGe:H alloys. Raman ...

fractions of 0, 15, 29, 47, 63, 81, and 100at.% were obtained from Yueqin Xu and Harv Mahan at NREL. These 1.2 to 1.6 micron thick alloy films were deposited onto n + a-Si:H...

Optical emission studies of the glow-discharge deposition of a-Si:H alloys reveal the presence of reactive species derived from process gases and impurities. Studies of the dependences of emission intensities upon deposition parameters elucidate the mechanisms of formation of these species. Effects of impurities detected by emission spectroscopy upon ...

Optical emission studies of the glow-discharge deposition of a-Si:H alloys reveal the presence of reactive species derived from process gases and impurities. Studies of the dependences of emission intensities upon depositon parameters elucidate the mechanisms of formation of these species. Effects of impurities detected by emission spectroscopy upon a-Si:H ...

Presented at the 2001 NCPV Program Review Meeting: High-quality high-deposition-rate (10 angstrom/s) a-SiGe:H alloy solar cells have been made by hot-wire chemical-vapor deposition. High-quality high-deposition-rate (10 {angstrom}/s) amorphous silicon germanium (a-SiGe:H) alloy solar cells have been made by ...

This report summarizes Energy Conversion Devices, Inc.'s (ECD) research under this program. ECD researchers explored the deposition of a-Si at high rates using very-high-frequency plasma MHz, and compared these VHF i-layers with radio-frequency (RF) plasm...

The results of exploration of various aspects of electron localization in models of amorphous silicon are reported. The Mulliken localization parameter and the charge-charge distribution function for defect-free a-Si are examined. Dangling bond defects and amorphous silicon-hydrogen alloys are also studied. (LEW)

to further improve the economies of scale which are inherent in ECD's continuous roil-to-roll amorphous--a significant problem in many glass substrate amorphous silicon alloy PV module manufacturing plants. ECD manufacturing. As a result, capital equipment costs for a large volume plant utilizing ECD's roll

This report describes the project by Energy Conversion Devices, Inc. (ECD) and its American joint venture, United Solar Systems Corp. (United Solar), to develop and commercialize a roll-to-roll triple-junction amorphous silicon alloy PV manufacturing technology. This low material cost, roll-to-roll production technology has the economies of scale to meet ...

Two main technologies for low cost solar cells using amorphous silicon (a-Si) film have been developed. A new PCVD (Plasma Chemical Vapor Deposition) fabrication process in which p,i, and n layers of a-Si are deposited in consecutive, separated reaction chambers, has been developed. In this process, high quality a-Si films are produced, because the ...

... Pagination or Media Count : 54. ... GROWTH, GALLIUM ALLOYS, YTTRIUM ALLOYS, INTERMETALLIC COMPOUNDS, IRON ALLOYS, GARNET, L ...

Contents: Production of magnesium alloys; Protection of magnesium and its alloys from corrosion; Main trends in improving magnesium refining and casting technology.

... the design of these alloys, the authors ... between the selection of alloy chemistry, the ... characteristic of various rapid solidification powder production ...

... of factors affecting the mechanical properties of ductile cast iron alloys ... Descriptors : *CASTING ALLOYS, *IRON ALLOYS, MATHEMATICAL ...

... PRODUCTION, GENERATORS, MARKER LIGHTS, THERMOCOUPLES, GERMANIUM ALLOYS, BISMUTH ALLOYS, TELLURIUM ALLOYS, LEAD ...

Computer simulations are reported of hydrogenated amorphous silicon germanium (a-SiGe:H) layers that make up the graded part of the intrinsic layer near the interfaces of a-SiGe:H solar cells. Therefore the graded part is approached with a staircase bandgap profile, consisting of three layers within which the material properties are constant. Calibrated model parameters are ...

The authors report on the development of helium diluted a-Si:H and a-SiGe:H solar cells with higher deposition rates and better feedstock utilization than devices made with hydrogen dilution. Both the initial and the stabilized efficiencies of the He-diluted single-junction a-Si:H and a-SiGe:H cells are similar to those of hydrogen-diluted cells with ...

... Pilot Production And Evaluation Of Tantalum Alloy Sheet.t ... This is the final report on the "Pilot Production and Evaluation of Tantalum Alloy Sheet" ...

This research supported by NREL Subcontract XG-1-10063-1 over the past three years has involved, first of all, a fairly complete characterization of a two series of a-Si{sub 1-x}Ge{sub x}:H samples: a series of 9 films grown at the University of Delaware by the photo-CVD method (for 0.29 {<=} {times} {<=} 0.62) and series of 6 films grown at U.S.S.C. by the glow discharge method (for 0.20 ...

This research supported by NREL Subcontract XG-1-10063-1 over the past three years has involved, first of all, a fairly complete characterization of a two series of a-Si(1-x)Ge(x):H samples: a series of 9 films grown at the University of Delaware by the photo-CVD method (for 0.29 less than or equal to x less than or equal to 0.62) and series of 6 films grown at U.S.S.C. by the glow discharge ...

The damage produced by implanting, at room temperature, 3-{mu}m-thick relaxed Si{sub 1{minus}x}Ge{sub x} alloys of high crystalline quality with 2 MeV Si{sup +} ions has been studied as a function of Ge content ({ital x}=0.04, 0.13, 0.24, or 0.36) and Si dose in the dose range 10{sup 10}{endash}2{times}10{sup 15} cm{sup {minus}2}. The accumulation of damage with increasing ...

The principal objective of this R&D program is to expand, enhance and accelerate knowledge and capabilities for the development of high-performance, two-terminal multifunction amorphous silicon (a-Si) alloy modules. The near-term goal of the program is to achieve 12% stable module efficiency by 1998 using the multifunction approach. This report ...

This report documents the results of material development, single- junction solar cell research, and high-efficiency multijunction cell development. High-quality a-Si:Ge:H:F alloys were made with optical band gaps as low as 1.3 eV; high-conductivity micro...

A detailed study of the electronic density of states (DOS) in the gap of hydrogenated amorphous silicon (a-Si:H) and related alloys is presented. Three independent DOS measurements are employed: field effect, Schottky diode complex admittance, and space-charge-limited currents (SCLC). Refinements in the method of analysis are presented for each technique, ...

... Descriptors : *CASTING, *TITANIUM ALLOYS, *CORROSION RESISTANT ALLOYS, SHEETS, TRANSLATIONS, CASTINGS, CORROSION ...

... Chemistry), *Titanium alloys, *Combustion, Aluminum alloys, Processing, Combustion products, Compressor blades, Compressor parts, Ignition ...

... AND APPLICATIONS OF DEPLETED URANIUM ALLOY PRODUCTS. ... INFORMATION FOR DEPLETED URANIUM ALLOYS WHICH COULD LEAD ...

... ALLOYS, PROTECTIVE TREATMENTS, DIFFUSION, PRODUCTION, ALUMINUM ALLOYS, PHASE STUDIES, CHROMIUM, MIXTURES, OXIDES ...

... ALLOYS, CONFIGURATIONS, CONICAL BODIES, MACHINING, MANUFACTURING, METAL PLATES, PROCESSING, PRODUCTION. ...

... MAGNESIUM ALLOYS, CONFIGURATIONS, CONICAL BODIES, MANUFACTURING, METAL PLATES, PROCESSING, PRODUCTION. ...

A report is made of technology, performance, and mechanical characteristics of metal alloys for use in USSR shipbuilding.

... COMPOSITE STRUCTURES, *POWDER METALLURGY, *TITANIUM ALLOYS, *BERYLLIUM ALLOYS, MECHANICAL PROPERTIES, EXTRUSION ...

... Descriptors : *MOLYBDENUM ALLOYS, *POWDER METALLURGY, *SINTERING, ADDITIVES, ALLOYS, CARBIDES, CARBON, CONTROLLED ...

... ADDITIVES, ALLOYS, AMMONIA, CARBIDES, CARBON, CARBON ALLOYS, CONTROLLED ATMOSPHERES, DISSOCIATION, HARDENING ...

... Longer milling increased product densities with a ... that the as-milled W-Cu alloy ... ALLOYS, *TUNGSTEN ALLOYS, *BALL MILLS, MORPHOLOGY, X ...

United Solar Ovonic is world's largest manufacturer of thin film solar laminates that convert sunlight to electricity. In 1997, we attained initial 14.6% and stable 13.0% cell efficiencies using an a-Si:H/a-SiGe:H/a-SiGe:H triple-junction structure, which established the foundation of large volume roll-to-roll production. Since then, the power rating of our standard ...

The principal objective of this program is to conduct research on semiconductor materials and non-semiconductor materials to enhance the performance of multibandgap, multijunction, large-area amorphous silicon-based alloy modules. The goal for this program is to demonstrate stabilized module efficiency of 12% for multijunction modules of area greater than 900 cm{sup 2}. ...

We report the photoluminescence (PL) and structural properties of a new class of efficient visible-light-emitting semiconductors: low defect density a-Si:H/sub x/ alloys. For films prepared by the (thermal) homogeneous chemical vapor deposition (HOMOCVD) method, new broadband PL develops for x>0.3, reaching a peak emission energy of 2.05 eV for a ...