... Accession Number : ADA466079. Title : Molecular Random Access Memory Cell. Descriptive Note : Journal article. Corporate ...
DTIC Science & Technology
... Each memory cell in the array is ... Descriptors : *PATENTS, *BLOCK ORIENTED RANDOM ACCESS MEMORIES, *MICROPROCESSORS, ARRAYS ...
... A SINGLE-TRANSISTOR MEMORY CELL AND SENSE AMPLIFIER FOR A GALLIUM ARSENIDE DYNAMIC RANDOM ACCESS MEMORY by ...
... virtually nonvolatile, Random Access Memory (RAM) cell ... Descriptors : *Patents, *Random access computer storage, *Nonvolatile memories, Metal ...
... Descriptors : *Patent applications, *Random access computer storage, *Memory devices, *Nonvolatile memories, *Integrated circuits, High density. ...
A 1-kbit Josephson random access memory has been sucessfully demonstrated. The memory plane has been constructed with a new Josephson memory cell named the variable threshold memory cell. The cell is based on an asymmetrical dc ...
National Technical Information Service (NTIS)
... Title : A Single-Transistor Memory Cell and Sense Amplifier for a Gallium Arsenide Dynamic Random Access Memory. Descriptive ...
... 4Mbit non-volatile Chalcogenide-Random Access Memory (C-RAM ... to the chalcogenide memory cells to ... direct chalcogenide cell access, margin test ...
... The design of GaAs dynamic memories using FET direct-access ... Experimental demonstration of complete GaAs dynamic memory cells operating at ...
Electronically programmable memory devices utilizing molecular self- assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to ...
The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjac...
... We present a new design for dual-port memories that uses single-port memory cells but guarantees fast deterministic read/write access. ...
... Accession Number : ADA428390. Title : Light Weight and Flexible Organic Memory Cells for Satellite Application. ... Pagination or Media Count : 31. ...
Introduction Parallel machines that communicate via a shared memory, so called parallel random access machines random access machine (PRAM) consists of processors P 1 ; : : : ; Pm and a shared memory with cells U = f random access to the shared memory ...
E-print Network
A magnetic random access memory circuit comprises a plurality of magnetic memory cells, each of the memory cells including a magnetic storage element having an easy axis and a hard axis associated therewith, and a plurality of column lines and row lines f...
Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access ...
Energy Citations Database
The High Critical Temperature Superconductor (HCTS)/Magnetic Random Access Mass Storage (MRAM) Memory cell has very attractive features and, in the block-transfer mode of operation, can be very high speed. A thermal model that forecasts the time necessary...
A dynamic, virtually nonvolatile random access memory (RAM) storage cell is provided by storing information in a Nonvolatile Charge Injection Device (NOVCID), first in volatile form, then by an electric signal transferring the stored intelligence into a n...
A random access memory (RAM) uses n bits to randomly address N=2(n) distinct memory cells. A quantum random access memory (QRAM) uses n qubits to address any quantum superposition of N memory cells. We present an architecture that ...
PubMed
This is a fault-tolerant random access memory for use in fault-tolerant computers. It comprises a plurality of memory chips each comprising a plurality of on-line testable and correctable memory cells disposed in rows and columns for holding individually ...
More than any other obstacle, the lack of a fast, dense random access memory (RAM) has hindered the development of Josephson digital electronics. The principal limitation has been the physical size of the superconductive memory cell which is almost always...
A multi-state magnetoresistive random access memory device having a pinned ferromagnetic region with a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, a non-ferromagnetic spacer layer positioned on the pi...
This thesis presents the design and layout of a Gallium Arsenide (GaAs) Dynamic Random Access Memory (DRAM) cell. Attempts have been made at producing GaAs DRAM cells, but these have dealt with modifications to the fabrication process, are expensive, and ...
Naive T cells proliferate in response to lymphopenia and acquire the phenotypic and functional qualities of memory T cells, providing enhanced protection against infection. How well memory-like T cells generated during lymphopenia-induced homeostatic proliferation ...
PubMed Central
... into a random access memory and that ... higher performance memory would result ... Descriptors : *NONVOLATILE MEMORIES, *BLOCK ORIENTED ...
