R 3Au 9 Pn ( R = Y, Gd–Tm; Pn = Sb, Bi): A link between Cu 10Sn 3 and Gd 14Ag 51

DOE Office of Scientific and Technical Information (OSTI.GOV)

Celania, Chris; Smetana, Volodymyr; Provino, Alessia

A new series of intermetallic compounds R 3Au 9 Pn ( R = Y, Gd–Tm; Pn = Sb, Bi) has been discovered during the explorations of the Au-rich parts of rare-earth-containing ternary systems with p-block elements. The existence of the series is strongly restricted by both geometric and electronic factors. R 3Au 9 Pn compounds crystallize in the hexagonal crystal system with space group P6 3/m (a = 8.08–8.24 Å, c = 8.98–9.08 Å). All compounds feature Au- Pn, formally anionic, networks built up by layers of alternating edge-sharing Au@Au 6 and Sb@Au 6 trigonal antiprisms of overall composition Aumore » 6/2 Pn connected through additional Au atoms and separated by a triangular cationic substructure formed by R atoms. From a first look, the series appears to be isostructural with recently reported R 3Au 7Sn 3 (a ternary ordered derivative of the Cu 10Sn 3-structure type), but no example of R 3Au 9M is known when M is a triel or tetrel element. R 3Au 9 Pn also contains Au@Au 6Au 2 R 3 fully capped trigonal prisms, which are found to be isostructural with those found in the well-researched R 14Au 51 series. This structural motif, not present in R 3Au 7Sn 3, represents a previously unrecognized link between Cu 10Sn 3 and Gd 14Ag 51 parent structure types. Magnetic property measurements carried out for Ho 3Au 9Sb reveal a complex magnetic structure characterized by antiferromagnetic interactions at low temperature ( T N = 10 K). Two metamagnetic transitions occur at high field with a change from antiferromagnetic toward ferromagnetic ordering. Density functional theory based computations were performed to understand the materials’ properties and to shed some light on the stability ranges. As a result, this allowed a better understanding of the bonding pattern, especially of the Au-containing substructure, and elucidation of the role of the third element in the stability of the structure type.« less

R 3Au 9 Pn ( R = Y, Gd–Tm; Pn = Sb, Bi): A link between Cu 10Sn 3 and Gd 14Ag 51

DOE PAGES

Celania, Chris; Smetana, Volodymyr; Provino, Alessia; ...

2017-06-05

A new series of intermetallic compounds R 3Au 9 Pn ( R = Y, Gd–Tm; Pn = Sb, Bi) has been discovered during the explorations of the Au-rich parts of rare-earth-containing ternary systems with p-block elements. The existence of the series is strongly restricted by both geometric and electronic factors. R 3Au 9 Pn compounds crystallize in the hexagonal crystal system with space group P6 3/m (a = 8.08–8.24 Å, c = 8.98–9.08 Å). All compounds feature Au- Pn, formally anionic, networks built up by layers of alternating edge-sharing Au@Au 6 and Sb@Au 6 trigonal antiprisms of overall composition Aumore » 6/2 Pn connected through additional Au atoms and separated by a triangular cationic substructure formed by R atoms. From a first look, the series appears to be isostructural with recently reported R 3Au 7Sn 3 (a ternary ordered derivative of the Cu 10Sn 3-structure type), but no example of R 3Au 9M is known when M is a triel or tetrel element. R 3Au 9 Pn also contains Au@Au 6Au 2 R 3 fully capped trigonal prisms, which are found to be isostructural with those found in the well-researched R 14Au 51 series. This structural motif, not present in R 3Au 7Sn 3, represents a previously unrecognized link between Cu 10Sn 3 and Gd 14Ag 51 parent structure types. Magnetic property measurements carried out for Ho 3Au 9Sb reveal a complex magnetic structure characterized by antiferromagnetic interactions at low temperature ( T N = 10 K). Two metamagnetic transitions occur at high field with a change from antiferromagnetic toward ferromagnetic ordering. Density functional theory based computations were performed to understand the materials’ properties and to shed some light on the stability ranges. As a result, this allowed a better understanding of the bonding pattern, especially of the Au-containing substructure, and elucidation of the role of the third element in the stability of the structure type.« less

The growth of intermetallic compounds at Sn-Ag-Cu solder/Cu and Sn-Ag-Cu solder/Ni interfaces and the associated evolution of the solder microstructure

NASA Astrophysics Data System (ADS)

Zribi, A.; Clark, A.; Zavalij, L.; Borgesen, P.; Cotts, E. J.

2001-09-01

The evolution of intermetallics at and near SnAgCu/Cu and SnAgCu/Ni interfaces was examined, and compared to the behavior, near PbSn/metal and Sn/metal interfaces. Two different solder compositions were considered, Sn93.6Ag4.7Cu1.7 and Sn95.5Ag3.5Cu1.0 (Sn91.8Ag5.1 Cu3.1 and Sn94.35Ag3.8Cu1.85 in atomic percent). In both cases, phase formation and growth at interfaces with Cu were very similar to those commonly observed for eutectic SnPb solder. However, the evolution of intermetallics at SnAgCu/Ni interfaces proved much more complex. The presence of the Cu in the solder dramatically altered the phase selectivity at the solder/Ni interface and affected the growth kinetics of intermetallics. As long as sufficient Cu was available, it would combine with Ni and Sn to form (Cu,Ni)6)Sn5 which grew instead of the Ni3Sn4 usually observed in PbSn/Ni and Sn/Ni diffusion couples. This growing phase would, however, eventually consume essentially all of the available Cu in the solder. Because the mechanical properties of Sn-Ag-Cu alloys, depend upon the Cu content, this consumption can be expected to alter the mechanical properties of these Pb-free solderjoints. After depletion of the Cu from the solder, further annealing then gradually transformed the (Cu,Ni)6Sn5 phase into a (Ni,Cu)3Sn4 phase.

The role of Sb in solar cell material Cu 2ZnSnS 4

DOE PAGES

Zhang, Xiaoli; Han, Miaomiao; Zeng, Zhi; ...

2017-03-03

In this paper, based on first-principles calculations we report a possible mechanism of the efficiency improvement of the Sb-doped Cu 2ZnSnS 4 (CZTS) solar cells from the Sb-related defect point of view. Different from Sb in CuInSe 2 which substituted the Cu atomic site and acted as group-13 elements on the Cu-poor growth condition, we find out that Sb prefers to substitute Sn atomic site and acts as group-14 elements on the Cu-poor growth condition in CZTS. At low Sb concentration, Sb Sn produces a deep defect level which is detrimental for the solar cell application. At high Sb concentration,more » Sb 5s states form an isolated half-filled intermediate band at 0.5 eV above the valence band maximum which will increase the photocurrent as well as the solar cell efficiency.« less

Photophysical and Photocatalytic Properties of BiSnSbO6 under Visible Light Irradiation

PubMed Central

Huang, Panqi

2018-01-01

BiSnSbO6 with strong photocatalytic activity was first fabricated by a high-temperature, solid-state sintering method. The resulting BiSnSbO6 was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), UV-vis diffuse reflectance spectroscopy (DRS) and X-ray photoelectron spectroscopy (XPS). The results showed that BiSnSbO6, with a pyrochlore structure and a cubic crystal system by a space group Fd3m, was well crystallized. The lattice parameter or the band gap of BiSnSbO6 was 10.234594 Å or 2.83 eV. Compared with N-doped TiO2, BiSnSbO6 showed higher photocatalytic activity in the degradation of benzotriazole and rhodamine B. The apparent first-order rate constant for BiSnSbO6 in the degradation of benzotriazole and rhodamine B was 0.0182 min−1 and 0.0147 min−1, respectively. On the basis of the scavenger experiment, during the photocatalytic process, the main active species were arranged in order of increasing photodegradation rate: •OH < •O2− < h+. The removal rate of benzotriazole or rhodamine B was approximately estimated to be 100% with BiSnSbO6 as a photocatalyst after 200 min visible-light irradiation. Plentiful CO2 produced by the experiment indicated that benzotriazole or rhodamine B was continuously mineralized during the photocatalytic process. Finally, the possible photodegradation pathways of benzotriazole and rhodamine B were deduced. PMID:29587420

Study of Sn and SnAgCu Solders Wetting Reaction on Ni/Pd/Au Substrates

NASA Astrophysics Data System (ADS)

Liu, C. Y.; Wei, Y. S.; Lin, E. J.; Hsu, Y. C.; Tang, Y. K.

2016-12-01

Wetting reactions of pure Sn and Sn-Ag-Cu solder balls on Au(100 Å and 1000 Å)/Pd(500 Å)/Ni substrates were investigated. The (Au, Pd)Sn4 phase formed in the initial interfacial reaction between pure Sn and Au(100 Å and 1000 Å)/Pd(500 Å)/Ni substrates. Then, the initially formed (Au, Pd)Sn4 compound layer either dissolved or spalled into the molten Sn solder with 3 s of reflowing. The exposed Ni under-layer reacted with Sn solder and formed an interfacial Ni3Sn4 compound. We did not observe spalling compound in the Sn-Ag-Cu case, either on the thin Au (100 Å) or the thick Au (1000 Å) substrates. This implies that the Cu content in the Sn-Ag-Cu solder can efficiently suppress the spalling effect and really stabilize the interfacial layer. Sn-Ag-Cu solder has a better wetting than that of the pure Sn solder, regardless of the Au thickness of the Au/Pd/Ni substrate. For both cases of pure Sn and Sn-Ag-Cu, the initial wetting (<3-s reflowing) on the thin Au (100 Å) substrate is better than that of the thick Au (1000 Å) substrate. Over 3-s reflowing, the wetting on the thicker Au layer (1000 Å) substrate becomes better than the wetting on the thinner Au layer (100 Å) substrate.

Determination of Anand parameters for SnAgCuCe solder

NASA Astrophysics Data System (ADS)

Zhang, Liang; Xue, Songbai; Gao, Lili; Zeng, Guang; Sheng, Zhong; Chen, Yan; Yu, Shenglin

2009-10-01

A unified viscoplastic constitutive model, Anand equations, was used to represent the inelastic deformation behavior for Sn3.8Ag0.7Cu/Sn3.8Ag0.7 Cu0.03Ce solders in surface mount technology. The Anand parameters of the constitutive equations for the SnAgCu and SnAgCuCe solders were determined from separated constitutive relations and experimental results. Non-linear least-squares fitting was selected to determine the model constants. Comparisons were then made with experimental measurements of the stress-inelastic strain curves: excellent agreement was found. The model accurately predicted the overall trend of steady-state stress-strain behavior of SnAgCu and SnAgCuCe solders for the temperature ranges from -55 to 125 °C and for the strain rate range from 1% s-1 to 0.01% s-1. It is concluded that the Anand model can be applied to represent the inelastic deformation behavior of solders at high homologous temperatures and can be recommended for finite element simulation of the stress-strain response of lead-free soldered joints. Based on the Anand model, the investigations of thermo-mechanical behavior of SnAgCu and SnAgCuCe soldered joints in fine pitch quad flat package by the finite element code have been done under thermal cyclic loading, and it is found that the reliability of the SnAgCuCe soldered joints is better than that of the SnAgCu soldered joints.

Effect of Sn-Ag-Cu on the Improvement of Electromigration Behavior in Sn-58Bi Solder Joint

NASA Astrophysics Data System (ADS)

Wang, Fengjiang; Zhou, Lili; Zhang, Zhijie; Wang, Jiheng; Wang, Xiaojing; Wu, Mingfang

2017-10-01

Reliability issues caused by the formation of a Bi-rich layer at the anode interface usually occurs in the Sn-58Bi eutectic solder joint during electromigration (EM). To improve the EM performance of a Sn-58Bi solder joint, Sn-3.0Ag-0.5Cu solder was introduced into it to produce SnBi-SnAgCu structural or compositional composite joints, and their EM behaviors were investigated with the current density of 1.0 × 104 A/cm2 for different stressing times. The structure of the compositional composite solder joint was obtained by the occurrence of partial or full mixing between Sn-Bi and Sn-Ag-Cu solder with a suitable soldering temperature. In the structural composite joint, melted Sn-Bi was partially mixed with Sn-Ag-Cu solder to produce a Cu/Sn-Bi/Sn-Ag-Cu/Sn-Bi/Cu structure. In the compositional composite joint, full melting and mixing between these two solders occurred to produce a Cu/Sn-Ag-Cu-Bi/Cu structure, in which the solder matrix was a homogeneous structure including Sn, Bi phases, Cu6Sn5 and Ag3Sn IMCs. After current stressing, the EM performance of Sn-Bi solder was obviously improved with the structural or the compositional composite joint. In Sn-58Bi joints, a thick Bi-rich layer was easily produced at the anode interface, and obviously increased with stressing time. However, after current stressing on the structural composite joints, the existence of s Sn-3.0Ag-0.5Cu interlayer between the two Sn-58Bi solders effectively acted as a diffusion barrier and significantly slowed the formation of the Bi-rich layer at the anode side and the IMC thicknesses at the interfaces.

Thermoelectric properties of AgSbTe₂ from first-principles calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rezaei, Nafiseh; Akbarzadeh, Hadi; Hashemifar, S. Javad, E-mail: hashemifar@cc.iut.ac.ir

2014-09-14

The structural, electronic, and transport properties of AgSbTe₂ are studied by using full-relativistic first-principles electronic structure calculation and semiclassical description of transport parameters. The results indicate that, within various exchange-correlation functionals, the cubic Fd3⁻m and trigonal R3⁻m structures of AgSbTe₂ are more stable than two other considered structures. The computed Seebeck coefficients at different values of the band gap and carrier concentration are accurately compared with the available experimental data to speculate a band gap of about 0.1–0.35 eV for AgSbTe₂ compound, in agreement with our calculated electronic structure within the hybrid HSE (Heyd-Scuseria-Ernzerhof) functional. By calculating the semiclassical Seebeckmore » coefficient, electrical conductivity, and electronic part of thermal conductivity, we present the theoretical upper limit of the thermoelectric figure of merit of AgSbTe₂ as a function of temperature and carrier concentration.« less

Collective-Goldstone-mode-induced ultralow lattice thermal conductivity in Sn-filled skutterudite SnFe4Sb12

NASA Astrophysics Data System (ADS)

Fu, Yuhao; He, Xin; Zhang, Lijun; Singh, David J.

2018-01-01

We demonstrate that the concept of Goldstone bosons can be exploited for phonon control and thermal conductivity reduction of materials. By studying lattice dynamics of the Sn filled skutterudite SnFe4Sb12 , we find Sn off-centers in its coordination cage in contrast to the common rare earth fillers. This leads to low-frequency Goldstone-like modes below 1 THz associated mainly with Sn motions. Importantly, these involve collective motion of other atoms, especially Sb, in the host skutterudite lattice. The optical modes transversing to the Sn off-centering direction are identified as Goldstone type modes in association with a three-dimensional Mexican-hat-like potential energy surface. The interaction of these collective Goldstone modes with the host heat-carrying phonons is shown to lead to ultralow lattice thermal conductivity.

Microstructural Evolution and Tensile Properties of SnAgCu Mixed with Sn-Pb Solder Alloys (Preprint)

DTIC Science & Technology

2009-03-01

AFRL-RX-WP-TP-2009-4132 MICROSTRUCTURAL EVOLUTION AND TENSILE PROPERTIES OF SnAgCu MIXED WITH Sn-Pb SOLDER ALLOYS (PREPRINT...PROPERTIES OF SnAgCu MIXED WITH Sn-Pb SOLDER ALLOYS (PREPRINT) 5a. CONTRACT NUMBER FA8650-04-C-5704 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...ANSI Std. Z39-18 Microstructural evolution and tensile properties of SnAgCu mixed with Sn-Pb solder alloys Fengjiang Wang,1 Matthew O’Keefe,1,2 and

Collective-Goldstone-mode-induced ultralow lattice thermal conductivity in Sn-filled skutterudite SnFe 4 Sb 12

DOE PAGES

Fu, Yuhao; He, Xin; Zhang, Lijun; ...

2018-01-03

Here, we demonstrate that the concept of Goldstone bosons can be exploited for phonon control and thermal conductivity reduction of materials. By studying lattice dynamics of the Sn filled skutterudite SnFe 4Sb 12, we find Sn off-centers in its coordination cage in contrast to the common rare earth fillers. This leads to low-frequency Goldstone-like modes below 1 THz associated mainly with Sn motions. Importantly, these involve collective motion of other atoms, especially Sb, in the host skutterudite lattice. The optical modes transversing to the Sn off-centering direction are identified as Goldstone type modes in association with a three-dimensional Mexican-hat-like potentialmore » energy surface. The interaction of these collective Goldstone modes with the host heat-carrying phonons is shown to lead to ultralow lattice thermal conductivity.« less

Collective-Goldstone-mode-induced ultralow lattice thermal conductivity in Sn-filled skutterudite SnFe 4 Sb 12

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Yuhao; He, Xin; Zhang, Lijun

Here, we demonstrate that the concept of Goldstone bosons can be exploited for phonon control and thermal conductivity reduction of materials. By studying lattice dynamics of the Sn filled skutterudite SnFe 4Sb 12, we find Sn off-centers in its coordination cage in contrast to the common rare earth fillers. This leads to low-frequency Goldstone-like modes below 1 THz associated mainly with Sn motions. Importantly, these involve collective motion of other atoms, especially Sb, in the host skutterudite lattice. The optical modes transversing to the Sn off-centering direction are identified as Goldstone type modes in association with a three-dimensional Mexican-hat-like potentialmore » energy surface. The interaction of these collective Goldstone modes with the host heat-carrying phonons is shown to lead to ultralow lattice thermal conductivity.« less

Effect of laser irradiation on Ag4In12Sb56Te28

NASA Astrophysics Data System (ADS)

Chinnusamy, Rangasami

2018-04-01

Ag4In12Sb56Te28 has been synthesized by melt-quench method. Phase homogeneity, crystal structure and effect of laser irradiation have been investigated using X-ray diffraction (XRD) and Raman spectroscopy. Rietveld refinement of crystal structure revealed that Ag4In12Sb56Te28 is a multiphase system with AgIn3Te5, Sb8Te3 and Sb phases. Combined optical microscopy and Raman spectroscopy have been used to understand the distribution of different phases on the surface of the samples, which substantiated the results of Rietveld analysis. Interaction of 20 mW laser beam with samples has been investigated using Raman measurements. The results have shown that regions with large phase fraction of AgIn3Te5 become amorphous during laser-sample interaction, but the starting phase remains nearly same after the interaction. Regions with AgIn3Te5 and nearly equal or larger amount of Sb8Te3 have shown significant growth of α-Sb2O3 during and after laser-sample interaction. Regions rich in Sb have shown formation of AgIn3Te5 and growth of α-Sb2O3 during and after interaction. These observations have been explained based on the maximum temperature rise at different regions during laser-sample interaction.

Interfacial Reaction and Shear Strength of SnAgCu/Ni/Bi2Te3-Based TE Materials During Aging

NASA Astrophysics Data System (ADS)

Jing, Hongyang; Li, Yuan; Xu, Lianyong; Han, Yongdian; Lu, Guoquan; Zhang, Hao

2015-12-01

As a diffusion barrier layer, Ni is widely applied in power electronics packaging, especially in thermoelectric devices. This paper presents the variation of Ni diffusion barrier layer during aging and failure mechanisms of thermoelectric device joints. The thermoelectric joint consists of Sn96.5Ag3.0Cu0.5 (SAC305) solder and Bi2Te3-based thermoelectric materials such as Bi0.5Sb1.5Te3 and Bi1.8Sb0.2Se0.15Te2.85 during service. The result shows that with the increasing aging time, Ni layer was constantly consumed by SAC305 and Bi2Te3-based thermoelectric materials simultaneously. The reaction products are (Cu,Ni)6Sn5 and NiTe or Ni(Bi,Te), respectively. Besides, the shear strength of SAC305/Bi0.5Sb1.5Te3 joint or SAC305/Bi1.8Sb0.2Se0.15Te2.85 joint gets gradually decreased and thermoelectric conversion performance gets worse. Meantime, the different failure mechanisms are also compared between SAC305/Bi0.5Sb1.5Te3 couple joints and SAC305/Bi1.8Sb0.2Se0.15Te2.85 couple joints.

Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

NASA Astrophysics Data System (ADS)

Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

2016-12-01

In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

Local atomic structure inheritance in Ag{sub 50}Sn{sub 50} melt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, Yanwen; Bian, Xiufang, E-mail: xfbian@sdu.edu.cn; Qin, Jingyu

2014-01-28

Local structure inheritance signatures were observed during the alloying process of the Ag{sub 50}Sn{sub 50} melt, using high-temperature X-ray diffraction and ab initio molecular dynamics simulations. The coordination number N{sub m} around Ag atom is similar in the alloy and in pure Ag melts (N{sub m} ∼ 10), while, during the alloying process, the local structure around Sn atoms rearranges. Sn-Sn covalent bonds were substituted by Ag-Sn chemical bonds, and the total coordination number around Sn increases by about 70% as compared with those in the pure Sn melt. Changes in the electronic structure of the alloy have been studied by Agmore » and Sn K-edge X-ray absorption spectroscopy, as well as by calculations of the partial density of states. We propose that a leading mechanism for local structure inheritance in Ag{sub 50}Sn{sub 50} is due to s-p dehybridization of Sn and to the interplay between Sn-s and Ag-d electrons.« less

Morphology, structure, optical, and electrical properties of AgSbO3

NASA Astrophysics Data System (ADS)

Yi, Z. G.; Liu, Y.; Withers, R. L.

2010-07-01

The morphology of defect pyrochlore-type, AgSbO3 microparticle/nanoparticles obtained via solid state reaction evolve from irregular to Fullerene-like polyhedra before finally decomposing into metal-organic framework-5 like particles with increase in sintering temperature. The defect pyrochlore-type AgSbO3 particles are slightly Ag deficient while the valence of the antimony ion is shown to be +5 giving rise to a probable stoichiometry of Ag1-xSbVO3-x/2, with x˜0.01-0.04. A highly structured diffuse intensity distribution observed via electron diffraction is interpreted in terms of correlated displacements of one-dimensional (1D) silver ion chains along ⟨110⟩ directions. A redshifting in the absorption edges in UV-visible absorption spectra is observed for samples prepared at sintering temperatures higher than 1000 °C and attributed to the surface plasma resonance effect associated with small amounts of excess metallic Ag on the Ag1-xSbVO3-x/2 particles. An electrical properties investigation of the silver antimonate samples via dielectric, conductivity, and electric modulus spectroscopy shows a prominent dielectric relaxation associated with grain boundaries. The silver ion conductivity is associated with correlated displacements of 1D silver ion chains along ⟨110⟩ directions.

Using Ag/Ag2O/SnO2 Nanocomposites to Remove Malachite Green by a Photocatalytic Process

NASA Astrophysics Data System (ADS)

Taufik, A.; Paramarta, V.; Prakoso, S. P.; Saleh, R.

2017-03-01

Silver/silver oxide/tin oxide nanocomposites of various weight ratios were synthesized using a microwave-assisted method. The Ag/Ag2O:SnO2 nanoparticle weight ratios used were 25:75, 50:50, and 75:25. All samples were characterized using X-ray diffraction, UV-Vis spectroscopy, Differential Scanning Calorimetry and Thermogravimetric Analysis (TGA). The Ag/Ag2O/SnO2 nanocomposites contained cubic structures provided by the Ag and Ag2O and tetragonal structures provided by the SnO2. The silver resulted in surface plasmon resonance (SPR) at a wavelength of about 435 nm. The silver oxide material was transformed into pure Ag at a temperature of about 370 °C The photocatalytic activity was tested on the degradation of malachite green (MG) from an aqueous solution. The results showed that Ag/Ag2O/SnO2 at a ratio of 50:50 exhibited the best photocatalytic performance for degrading MG under visible-light irradiation. The degradation of MG using Ag/Ag2O/SnO2 nanocomposites followed pseudo first-order kinetic reactions, and electron holes were found to be the main species acting on the degradation process.

Photocatalytic performance of Ag doped SnO2 nanoparticles modified with curcumin

NASA Astrophysics Data System (ADS)

Vignesh, K.; Hariharan, R.; Rajarajan, M.; Suganthi, A.

2013-07-01

Visible light active Ag doped SnO2 nanoparticles modified with curcumin (Cur-Ag-SnO2) have been prepared by a combined precipitation and chemical impregnation route. The optical properties, phase structures and morphologies of the as-prepared nanoparticles were characterized using UV-visible diffuse reflectance spectra (UV-vis-DRS), X-ray powder diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The surface area was measured by Brunauer. Emmett. Teller (B.E.T) analysis. Compared to bare SnO2, the surface modified photocatalysts (Ag-SnO2 and Cur-Ag-SnO2) showed a red shift in the visible region. The photocatalytic activity was monitored via the degradation of rose bengal (RB) dye and the results revealed that Cur-Ag-SnO2 shows better photocatalytic activity than that of Ag-SnO2 and SnO2. The superior photocatalytic activity of Cur-Ag-SnO2 could be attributed to the effective electron-hole separation by surface modification. The effect of photocatalyst concentration, initial dye concentration and electron scavenger on the photocatalytic activity was examined in detail. Furthermore, the antifungal activity of the photocatalysts and the reusability of Cur-Ag-SnO2 were tested.

Enhancement of Thermoelectric Properties in SnTe with (Ag, In) Co-Doping

NASA Astrophysics Data System (ADS)

Li, J. Q.; Yang, N.; Li, S. M.; Li, Y.; Liu, F. S.; Ao, W. Q.

2018-01-01

A lead-free SnTe compound shows good electrical property but high thermal conductivity, resulting in a low figure-of-merit ZT. We present a significant enhancement of the thermoelectric properties of p-type SnTe with (Ag, In) co-doping. The Ag and In co-doped Sn1-2 x Ag x In x Te ( x = 0.00, 0.01, 0.02, 0.03, 0.04 and 0.05) are prepared by melting, quenching and spark plasma sintering. A homogeneous NaCl-type SnTe-based solid solution forms in the alloys at low Ag and In content ( x ≤ 0.02), while a AgInTe2 minor secondary phase precipitates for higher x. Similar to In doping, the introduction of Ag and In at Sn sites in SnTe considerably increases the Seebeck coefficient and power factor by creating resonant levels near the Fermi energy. In addition, the Ag and In solute atoms in the SnTe-based solid solution and the minor secondary phase AgInTe2 enhance phonon scattering and thus significantly reduce the carrier and lattice thermal conductivity. Ag and In co-doping shows a collective advantage on the overall thermoelectric performance of SnTe or In-doped SnTe. A maximum ZT of 1.23 at 873 K and average ZT of 0.58 can be obtained in the alloy Sn1-2 x Ag x In x Te with x = 0.03.

Interfacial Bonding Energy on the Interface between ZChSnSb/Sn Alloy Layer and Steel Body at Microscale

PubMed Central

Xia, Quanzhi; Ma, Yang; Meng, Fanning; Liang, Yinan; Li, Zhixiong

2017-01-01

To investigate the performance of bonding on the interface between ZChSnSb/Sn and steel body, the interfacial bonding energy on the interface of a ZChSnSb/Sn alloy layer and the steel body with or without Sn as an intermediate layer was calculated under the same loadcase using the molecular dynamics simulation software Materials Studio by ACCELRYS, and the interfacial bonding energy under different Babbitt thicknesses was compared. The results show that the bonding energy of the interface with Sn as an intermediate layer is 10% larger than that of the interface without a Sn layer. The interfacial bonding performances of Babbitt and the steel body with Sn as an intermediate layer are better than those of an interface without a Sn layer. When the thickness of the Babbitt layer of bushing is 17.143 Å, the interfacial bonding energy reaches the maximum, and the interfacial bonding performance is optimum. These findings illustrate the bonding mechanism of the interfacial structure from the molecular level so as to ensure the good bonding properties of the interface, which provides a reference for the improvement of the bush manufacturing process from the microscopic point of view. PMID:28946690

Interfacial Bonding Energy on the Interface between ZChSnSb/Sn Alloy Layer and Steel Body at Microscale.

PubMed

Wang, Jianmei; Xia, Quanzhi; Ma, Yang; Meng, Fanning; Liang, Yinan; Li, Zhixiong

2017-09-25

To investigate the performance of bonding on the interface between ZChSnSb/Sn and steel body, the interfacial bonding energy on the interface of a ZChSnSb/Sn alloy layer and the steel body with or without Sn as an intermediate layer was calculated under the same loadcase using the molecular dynamics simulation software Materials Studio by ACCELRYS, and the interfacial bonding energy under different Babbitt thicknesses was compared. The results show that the bonding energy of the interface with Sn as an intermediate layer is 10% larger than that of the interface without a Sn layer. The interfacial bonding performances of Babbitt and the steel body with Sn as an intermediate layer are better than those of an interface without a Sn layer. When the thickness of the Babbitt layer of bushing is 17.143 Å, the interfacial bonding energy reaches the maximum, and the interfacial bonding performance is optimum. These findings illustrate the bonding mechanism of the interfacial structure from the molecular level so as to ensure the good bonding properties of the interface, which provides a reference for the improvement of the bush manufacturing process from the microscopic point of view.

Partitioning of V, Mn, Co, Ni, Cu, Zn, As, Mo, Ag, Sn, Sb, W, Au, Pb, and Bi between sulfide phases and hydrous basanite melt at upper mantle conditions

NASA Astrophysics Data System (ADS)

Li, Yuan; Audétat, Andreas

2012-11-01

The partitioning of 15 major to trace metals between monosulfide solid solution (MSS), sulfide liquid (SL) and mafic silicate melt (SM) was determined in piston-cylinder experiments performed at 1175-1300 °C, 1.5-3.0 GPa and oxygen fugacities ranging from 3.1 log units below to 1.0 log units above the quartz-fayalite-magnetite fO2 buffer, which conditions are representative of partial melting in the upper mantle in different tectonic settings. The silicate melt was produced by partial melting of a natural, amphibole-rich mantle source rock, resulting in hydrous (˜5 wt% H2O) basanitic melts similar to low-degree partial melts of metasomatized mantle, whereas the major element composition of the starting sulfide (˜52 wt% Fe; 39 wt% S; 7 wt% Ni; 2 wt% Cu) was similar to the average composition of sulfides in this environment. SL/SM partition coefficients are high (≥100) for Au, Ni, Cu, Ag, Bi, intermediate (1-100) for Co, Pb, Sn, Sb (±As, Mo), and low (≤1) for the remaining elements. MSS/SM partition coefficients are generally lower than SL/SM partition coefficients and are high (≥100) for Ni, Cu, Au, intermediate (1-100) for Co, Ag (±Bi, Mo), and low (≤1) for the remaining elements. Most sulfide-silicate melt partition coefficients vary as a function of fO2, with Mo, Bi, As (±W) varying by a factor >10 over the investigated fO2 range, Sb, Ag, Sn (±V) varying by a factor of 3-10, and Pb, Cu, Ni, Co, Au, Zn, Mn varying by a factor of 3-10. The partitioning data were used to model the behavior of Cu, Au, Ag, and Bi during partial melting of upper mantle and during fractional crystallization of primitive MORB and arc magmas. Sulfide phase relationships and comparison of the modeling results with reported Cu, Au, Ag, and Bi concentrations from MORB and arc magmas suggest that: (i) MSS is the dominant sulfide in the source region of arc magmas, and thus that Au/Cu ratios in the silicate melt and residual sulfides may decrease with increasing degree of

Growth Behavior of Intermetallic Compounds at SnAgCu/Ni and Cu Interfaces

NASA Astrophysics Data System (ADS)

Qi, Lihua; Huang, Jihua; Zhang, Hua; Zhao, Xingke; Wang, Haitao; Cheng, Donghai

2010-02-01

The growth behavior of reaction-formed intermetallic compounds (IMCs) at Sn3.5Ag0.5Cu/Ni and Cu interfaces under thermal-shear cycling conditions was investigated. The results show that the morphology of (Cu x Ni1- x )6Sn5 and Cu6Sn5 IMCs formed both at Sn3.5Ag0.5Cu/Ni and Cu interfaces gradually changed from scallop-like to chunk-like, and different IMC thicknesses developed with increasing thermal-shear cycling time. Furthermore, Cu6Sn5 IMC growth rate at the Sn3.5Ag0.5Cu/Cu interface was higher than that of (Cu x Ni1- x )6Sn5 IMC under thermal-shear cycling. Compared to isothermal aging, thermal-shear cycling led to only one Cu6Sn5 layer at the interface between SnAgCu solder and Cu substrate after 720 cycles. Moreover, Ag3Sn IMC was dispersed uniformly in the solder after reflow. The planar Ag3Sn formed near the interface changed remarkably and merged together to large platelets with increasing cycles. The mechanism of formation of Cu6Sn5, (Cu x Ni1- x )6Sn5 and Ag3Sn IMCs during thermal-shear cycling process was investigated.

Co-precipitation synthesis of nanostructured Cu3SbSe4 and its Sn-doped sample with high thermoelectric performance.

PubMed

Li, Di; Li, Rui; Qin, Xiao-Ying; Song, Chun-Jun; Xin, Hong-Xing; Wang, Ling; Zhang, Jian; Guo, Guang-lei; Zou, Tian-Hua; Liu, Yong-Fei; Zhu, Xiao-Guang

2014-01-28

Large-scale fabrication of nanostructured Cu3SbSe4 and its Sn-doped sample Cu3Sb0.98Sn0.02Se4 through a low-temperature co-precipitation route is reported. The effects of hot-pressing temperatures, time and Sn doping on the thermoelectric properties of Cu3SbSe4 are explored. The maximum figure of merit ZTmax obtained here reaches 0.62 for the un-doped Cu3SbSe4, which is three times as large as that of Cu3SbSe4 synthesized by the fusion method. Due to the ameliorated power factor by optimized carrier concentration and the reduced lattice thermal conductivity by enhanced phonon scattering at grain interfaces, Sn doping leads to an improvement of thermoelectric performance as compared to Cu3SbSe4. The maximum ZT for Cu3Sb0.98Sn0.02Se4 is 1.05 in this work, which is 50% larger than the largest value reported.

Porous carbon-free SnSb anodes for high-performance Na-ion batteries

NASA Astrophysics Data System (ADS)

Choi, Jeong-Hee; Ha, Choong-Wan; Choi, Hae-Young; Seong, Jae-Wook; Park, Cheol-Min; Lee, Sang-Min

2018-05-01

A simple melt-spinning/chemical-etching process is developed to create porous carbon-free SnSb anodes. Sodium ion batteries (SIBs) incorporating these anodes exhibit excellent electrochemical performances by accomodating large volume changes during repeated cycling. The porous carbon-free SnSb anode produced by the melt-spinning/chemical-etching process shows a high reversible capacity of 481 mAh g-1, high ICE of 80%, stable cyclability with a high capacity retention of 99% after 100 cycles, and a fast rate capability of 327 mAh g-1 at 4C-rate. Ex-situ X-ray diffraction and high resolution-transmission electron microscopy analyses demonstrate that the synthesized porous carbon-free SnSb anodes involve the highly reversible reaction with sodium through the conversion and recombination reactions during sodiation/desodiation process. The novel and simple melt-spinning/chemical-etching synthetic process represents a technological breakthrough in the commercialization of Na alloy-able anodes for SIBs.

Prediction of Phase Formation in Nanoscale Sn-Ag-Cu Solder Alloy

NASA Astrophysics Data System (ADS)

Wu, Min; Lv, Bailin

2016-01-01

In a dynamic nonequilibrium process, the effective heat of formation allows the heat of formation to be calculated as a function of concentrations of the reacting atoms. In this work, we used the effective heat of formation rule to predict the formation and size of compound phases in a nanoscale Sn-Ag-Cu lead-free solder. We calculated the formation enthalpy and effective formation enthalpy of compounds in the Sn-Ag, Sn-Cu, and Ag-Cu systems by using the Miedema model and effective heat of formation. Our results show that, considering the surface effect of the nanoparticle, the effective heat of formation rule successfully predicts the phase formation and sizes of Ag3Sn and Cu6Sn5 compounds, which agrees well with experimental data.

Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

PubMed

Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-08-16

A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb 4 -SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb 2 Se 3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb 4 -SbSe thin film.

Sb:SnO2 thin films-synthesis and characterization

NASA Astrophysics Data System (ADS)

Bhadrapriya B., C.; Varghese, Anitta Rose; Amarendra, G.; Hussain, Shamima

2018-04-01

Transparent thin films of antimony doped SnO2 have been synthesized and characterized using optical spectroscopy, XRD, RAMAN and FESEM. The band gap of Sb doped tin oxide thin film samples were found to vary from 3.26 eV to 3.7 eV. The XRD peaks showed prominent rutile SnO2 peaks with diminished intensity due to antimony doping. A wide band in the range 550-580 cm-1 was observed in raman spectra and is a feature of nano-sized SnO2. SEM images showed flower-like structures on thin film surface, a characteristic feature of antimony.

Intermetallic Compounds Formed in Sn-20In-2.8Ag Solder BGA Packages with Ag/Cu Pads

NASA Astrophysics Data System (ADS)

Jain, C. C.; Wang, S. S.; Huang, K. W.; Chuang, T. H.

2009-03-01

The interfacial reactions in a Sn-20In-2.8Ag solder ball grid array (BGA) package with immersion Ag surface finish are investigated. After reflow, the Ag thin film dissolves quickly into the solder matrix, and scallop-shaped intermetallic layers, with compositions of (Cu0.98Ag0.02)6(In0.59Sn0.41)5, appear at the interfaces between Sn-20In-2.8Ag solder ball and Cu pad. No evident growth of the (Cu0.98Ag0.02)6(Sn0.59In0.41)5 intermetallic compounds was observed after prolonged aging at 100 °C. However, the growth accelerated at 150 °C, with more intermetallic scallops floating into the solder matrix. The intermetallic thickness versus the square root of reaction time ( t 1/2) shows a linear relation, indicating that the growth of intermetallic compounds is diffusion-controlled. Ball shear tests show that the strength of Sn-20In-2.8Ag solder joints after reflow is 4.4 N, which increases to 5.18 N and 5.14 N after aging at 100 and 150 °C, respectively.

Growth and structural evolution of Sn on Ag(001): Epitaxial monolayer to thick alloy film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Suvankar; Menon, Krishnakumar S. R., E-mail: krishna.menon@saha.ac.in

The growth and structure of Sn on Ag(001), from submonolayer to thick film coverages at room temperature, are studied using low energy electron diffraction, x-ray photoemission spectroscopy and angle-resolved photoemission spectroscopy (ARPES) techniques. The authors observe different growth modes for submonolayer Sn coverages and for higher Sn coverages. Systematic surface structural evolution, consistent with the substitution of surface Ag atoms by Sn atoms, is observed for submonolayer Sn coverages while an ordered Ag-Sn bulk alloy film is formed for higher Sn coverages with an Ag overlayer. For monolayer coverage of Sn, a pseudomorphic growth of a Sn layer without alloyingmore » is determined. ARPES results also confirm the presence of an ordered Ag overlayer on the bulk Ag-Sn alloy film, suggesting the formation of an Ag/Ag{sub 3}Sn/Ag(001) sandwich structure at the surface for higher Sn coverages. The present results illustrate the complex interplay of atomic mobilities, surface free-energies, and alloy formation energies in determining the growth and structural properties of the system.« less

Facile synthesis of hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure for high performance photodetectors.

PubMed

Chen, Shuo; Qiao, Xvsheng; Wang, Fengxia; Luo, Qun; Zhang, Xianghua; Wan, Xia; Xu, Yang; Fan, Xianping

2016-01-28

An effective colloidal process involving the hot-injection method is developed to synthesize uniform single-crystalline Sb2Se3 nanorods in high yields. The photoconductive characteristics of the as-synthesized Sb2Se3 nanorods are investigated by developing a film-based photodetector and this device displays a remarkable response to visible light with an "ON/OFF" ratio as high as 50 (with an incident light density of 12.05 mW cm(-2)), short response/recovery times and long-term durability. To overcome the challenge of the intrinsic low electrical conductivity of Sb2Se3, hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure having a type-II band alignment are firstly prepared. The electric current of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film has been significantly increased both in the dark and under light illumination. The responsivity of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film is about 4.2 times as much as that of the photodetector based on the Sb2Se3 nanorod film. This improvement can be considered as an important step to promote Sb2Se3 based semiconductors for applications in high performance photodetectors.

Thermoelectric properties of (DyNiSn)1-x(DyNiSb)x composite

NASA Astrophysics Data System (ADS)

Synoradzki, Karol; Ciesielski, Kamil; Kępiński, Leszek; Kaczorowski, Dariusz

2018-05-01

High temperature thermoelectric properties of bulk and ball-milled cold-pressed (DyNiSn)1-x(DyNiSb)x composite materials have been studied. For bulk pure DyNiSn and DyNiSb samples the Seebeck coefficient reaches - 5.5 μV/K at 480 K and 120 μV/K at 540 K, respectively. Composite materials show metallic-like electrical resistivity and positive sign of Seebeck coefficient with values up to 50 times higher than in pure DyNiSn compound at 1000 K. Only for the sample with x = 0.47, the ball-milling drives to increase of Seebeck coefficient of about 37% at 650 K.

Controlling intermetallic compound growth in SnAgCu/Ni-P solder joints by nanosized Cu6Sn5 addition

NASA Astrophysics Data System (ADS)

Kao, Szu-Tsung; Lin, Yung-Chi; Duh, Jenq-Gong

2006-03-01

Nanosized Cu6Sn5 dispersoids were incorporated into Sn and Ag powders and milled together to form Sn-3Ag-0.5Cu composite solders by a mechanical alloying process. The aim of this study was to investigate the interfacial reaction between SnAgCu composite solder and electroless Ni-P/Cu UBM after heating for 15 min. at 240°C. The growth of the IMCs formed at the composite solder/EN interface was retarded as compared to the commercial Sn3Ag0.5Cu solder joints. With the aid of the elemental distribution by x-ray color mapping in electron probe microanalysis (EPMA), it was revealed that the SnAgCu composite solder exhibited a refined structure. It is proposed that the Cu6Sn5 additives were pinned on the grain boundary of Sn after heat treatment, which thus retarded the movement of Cu toward the solder/EN interface to form interfacial compounds. In addition, wetting is an essential prerequisite for soldering to ensure good bonding between solder and substrate. It was demonstrated that the contact angles of composite solder paste was <25°, and good wettability was thus assured.

Influence of multi-walled carbon nanotubes on melting temperature and microstructural evolution of Pb-free Sn-5Sb/Cu solder joint

NASA Astrophysics Data System (ADS)

Dele-Afolabi, T. T.; Azmah Hanim, M. A.; Norkhairunnisa, M.; Suraya, M. T.; Yusoff, H. M.

2017-09-01

In this study, the effects of multi-walled carbon nanotubes on the melting temperature and microstructural evolution of the Sn-5Sb/Cu joints are evaluated. Plain and carbon nanotubes (CNTs) reinforced Sn-5Sb solder systems with solder formulations Sn-5Sb, Sn-5Sb-0.01CNT, Sn-5Sb-0.05CNT and Sn-5Sb-0.1CNT were prepared through the powder metallurgy route and thereafter samples were subjected to thermal and microstructural evaluation. As retrieved from the DSC scans, a slight decline in the peak temperature was observed in the composite solders which is indicative of the CNTs role in exciting surface instability in the host Sn matrix. In order to prepare the solder joints and analyze the interfacial intermetallic compound (IMC) evolution, respective solder systems were placed on copper (Cu) substrate and subjected to both reflow soldering and isothermal aging (170°C) conditions. From the IMC thickness result, considerable retardation in the IMC layer growth was observed in the CNTs reinforced solder joints, especially the 0.05wt.% CNTs solder system owing to the inhibition of Sn atoms diffusion by reinforcement material.

Silver(I) complexes of the weakly coordinating solvents SO(2) and CH(2)Cl(2): crystal structures, bonding, and energetics of [Ag(OSO)][Al{OC(CF(3))(3)}(4)], [Ag(OSO)(2/2)][SbF(6)], and [Ag(CH(2)Cl(2))(2)][SbF(6)].

PubMed

Decken, Andreas; Knapp, Carsten; Nikiforov, Grigori B; Passmore, Jack; Rautiainen, J Mikko; Wang, Xinping; Zeng, Xiaoqing

2009-06-22

Pushing the limits of coordination chemistry: The most weakly coordinated silver complexes of the very weakly coordinating solvents dichloromethane and liquid sulfur dioxide were prepared. Special techniques at low temperatures and the use of weakly coordinating anions allowed structural characterization of [Ag(OSO)][Al{OC(CF(3))(3)}(4)], [Ag(OSO)(2/2)][SbF(6)], and [Ag(Cl(2)CH(2))(2)][SbF(6)] (see figure). An investigation of the bonding shows that these complexes are mainly stabilized by electrostatic monopole-dipole interactions.The synthetically useful solvent-free silver(I) salt Ag[Al(pftb)(4)] (pftb=--OC(CF(3))(3)) was prepared by metathesis reaction of Li[Al(pftb)(4)] with Ag[SbF(6)] in liquid SO(2). The solvated complexes [Ag(OSO)][Al(pftb)(4)], [Ag(OSO)(2/2)][SbF(6)], and [Ag(CH(2)Cl(2))(2)][SbF(6)] were prepared and isolated by special techniques at low temperatures and structurally characterized by single-crystal X-ray diffraction. The SO(2) complexes provide the first examples of coordination of the very weak Lewis base SO(2) to silver(I). The SO(2) molecule in [Ag(OSO)][Al(pftb)(4)] is eta(1)-O coordinated to Ag(+), while the SO(2) ligands in [Ag(OSO)(2/2)][SbF(6)] bridge two Ag(+) ions in an eta(2)-O,O' (trans,trans) manner. [Ag(CH(2)Cl(2))(2)][SbF(6)] contains [Ag(CH(2)Cl(2))(2)](+) ions linked through [SbF(6)](-) ions to give a polymeric structure. The solid-state silver(I) ion affinities (SIA) of SO(2) and CH(2)Cl(2), based on bond lengths and corresponding valence units in the corresponding complexes and tensimetric titrations of Ag[Al(pftb)(4)] and Ag[SbF(6)] with SO(2) vapor, show that SO(2) is a weaker ligand to Ag(+) than the commonly used weakly coordinating solvent CH(2)Cl(2) and indicated that binding strength of SO(2) to silver(I) in the silver(I) salts increases with increasing size of the corresponding counteranion ([Al(pftb)(4)](-)>[SbF(6)](-)). The experimental findings are in good agreement with theoretical gas-phase ligand

Application of Molecular Interaction Volume Model for Phase Equilibrium of Sn-Based Binary System in Vacuum Distillation

NASA Astrophysics Data System (ADS)

Kong, Lingxin; Yang, Bin; Xu, Baoqiang; Li, Yifu

2014-09-01

Based on the molecular interaction volume model (MIVM), the activities of components of Sn-Sb, Sb-Bi, Sn-Zn, Sn-Cu, and Sn-Ag alloys were predicted. The predicted values are in good agreement with the experimental data, which indicate that the MIVM is of better stability and reliability due to its good physical basis. A significant advantage of the MIVM lies in its ability to predict the thermodynamic properties of liquid alloys using only two parameters. The phase equilibria of Sn-Sb and Sn-Bi alloys were calculated based on the properties of pure components and the activity coefficients, which indicates that Sn-Sb and Sn-Bi alloys can be separated thoroughly by vacuum distillation. This study extends previous investigations and provides an effective and convenient model on which to base refining simulations for Sn-based alloys.

Effect of Silicon on Activity Coefficients of P, Bi, Cd, Sn, and Ag in Liquid Fe-Si, and Implications for Core Formation

NASA Technical Reports Server (NTRS)

Righter, K.; Pando, K.; Ross, D. K.; Righter, M.; Lapen, T. J.

2018-01-01

Cores of differentiated bodies (Earth, Mars, Mercury, Moon, Vesta) contain light elements such as S, C, Si, and O. We have previously measured small effects of Si on Ni and Co, and larger effects on Mo, Ge, Sb, As metal/silicate partitioning. The effect of Si on metal-silicate partitioning has been quantified for many siderophile elements, but there are a few key elements for which the effects are not yet quantified. Here we report new experiments designed to quantify the effect of Si on the partitioning of Bi, Cd, Sn, Ag, and P between metal and silicate melt. The results will be applied to Earth, Mars, Moon, and Vesta, for which we have good constraints on the mantle Bi, Cd, Sn, Ag, and P concentrations from mantle and/or basalt samples.

Reference Data for the Density, Viscosity, and Surface Tension of Liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn Eutectic Alloys

NASA Astrophysics Data System (ADS)

Dobosz, Alexandra; Gancarz, Tomasz

2018-03-01

The data for the physicochemical properties viscosity, density, and surface tension obtained by different experimental techniques have been analyzed for liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn eutectic alloys. All experimental data sets have been categorized and described by the year of publication, the technique used to obtain the data, the purity of the samples and their compositions, the quoted uncertainty, the number of data in the data set, the form of data, and the temperature range. The proposed standard deviations of liquid eutectic Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn alloys are 0.8%, 0.1%, 0.5%, 0.2%, and 0.1% for the density, 8.7%, 4.1%, 3.6%, 5.1%, and 4.0% for viscosity, and 1.0%, 0.5%, 0.3%, N/A, and 0.4% for surface tension, respectively, at a confidence level of 95%.

Effects of Sn and Sb on the corrosion resistance of AH 32 steel in a cargo oil tank environment

NASA Astrophysics Data System (ADS)

Ahn, SooHoon; Park, Kyung Jin; Oh, KkochNim; Hwang, SungDoo; Park, ByungJoon; Kwon, HyukSang; Shon, MinYoung

2015-09-01

Effects of the alloying elements, Sn and Sb, on the corrosion resistance of modified AH 32 steel for the cargo oil tanks (COT) were examined using an electrochemical test and weight loss measurement. All experiments were carried out in acidic chloride solution (0.14 M HCl and 10 wt% NaCl, pH 0.85) at 30 °C, simulating the inner bottom plate of COT. It was clearly found that the small amount addition of Sn and Sb improved the corrosion resistance of modified AH 32 steel, which is confirmed by the higher polarization resistance of AH 32 steel modified with Sn and Sb addition compared with that of the base steel. X-ray photoelectron spectroscopy analysis of the corroded surface after immersion of 72 h presented that the AH 32 steel modified with Sn and Sb addition created the protective corrosion products including SnO2 and Sb2O5. These oxides act as high corrosion inhibitor to anodic corrosion reaction, and hence leading to the improvement in the corrosion resistance of the modified AH 32 steels.

Thermophysical Properties of Sn-Ag-Cu Based Pb-Free Solders

NASA Astrophysics Data System (ADS)

Kim, Sok Won; Lee, Jaeran; Jeon, Bo-Min; Jung, Eun; Lee, Sang Hyun; Kang, Kweon Ho; Lim, Kwon Taek

2009-06-01

Lead-tin (Pb-Sn) alloys are the dominant solders used for electronic packaging because of their low cost and superior properties required for interconnecting electronic components. However, increasing environmental and health concerns over the toxicity of lead, combined with global legislation to limit the use of Pb in manufactured products, have led to extensive research and development studies of lead-free solders. The Sn-Ag-Cu ternary eutectic alloy is considered to be one of the promising alternatives. Except for thermal properties, much research on several properties of Sn-Ag-Cu alloy has been performed. In this study, five Sn-xAg-0.5Cu alloys with variations of Ag content x of 1.0 mass%, 2.5 mass%, 3.0 mass%, 3.5 mass%, and 4.0 mass% were prepared, and their thermal diffusivity and specific heat were measured from room temperature to 150 °C, and the thermal conductivity was calculated using the measured thermal diffusivity, specific heat, and density values. Also, the linear thermal expansion was measured from room temperature to 170 °C. The results show that Sn-3.5Ag-0.5Cu is the best candidate because it has a maximum thermal conductivity and a low thermal expansion, which are the ideal conditions to be a proper packaging alloy for effective cooling and thermostability.

Nucleation rates of Sn in undercooled Sn-Ag-Cu flip-chip solder joints

NASA Astrophysics Data System (ADS)

Arfaei, B.; Benedict, M.; Cotts, E. J.

2013-11-01

The nucleation of Sn from the melt in commercial SnAgCu flip chip solder joints was monitored at a number of different temperatures. Nucleation rates were estimated from measurements of nucleation times for 440 solder balls after one reflow and were found to be well epitomized by the expression I = 2 × 109 exp[(-1.6 × 105)/(T × (ΔT)2)] m-3 s-1, as per classical nucleation theory. After an additional reflow, the nucleation rates of the same 440 samples were observed to increase to I = 2 × 109 exp[(-8.9 × 104)/(T × (ΔT)2)] m-3 s-1. Thus it was shown that the expressions of classical nucleation theory well characterize nucleation kinetics for this system. These changes in nucleation kinetics were correlated with continued dissolution of Al and Ni in to the SnAgCu melt. Such increases in nucleation rates meant increases in the average solidification temperatures of the solder balls after reflow. Variations in the Sn grain morphology of the solder joints were correlated with these changes in solidification temperature, with larger Sn grains (beach ball Sn grain morphology) observed at higher solidification temperatures.

Pb-free Sn-Ag-Cu ternary eutectic solder

DOEpatents

Anderson, Iver E.; Yost, Frederick G.; Smith, John F.; Miller, Chad M.; Terpstra, Robert L.

1996-06-18

A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217.degree. C. and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid "mushy" zone) relative to the eutectic melting temperature (e.g. up to 15.degree. C. above the eutectic melting temperature).

Pb-free Sn-Ag-Cu ternary eutectic solder

DOEpatents

Anderson, I.E.; Yost, F.G.; Smith, J.F.; Miller, C.M.; Terpstra, R.L.

1996-06-18

A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217 C and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid ``mushy`` zone) relative to the eutectic melting temperature (e.g. up to 15 C above the eutectic melting temperature). 5 figs.

Wetting Behavior of Ternary Au-Ge-X (X = Sb, Sn) Alloys on Cu and Ni

NASA Astrophysics Data System (ADS)

Jin, S.; Valenza, F.; Novakovic, R.; Leinenbach, C.

2013-06-01

Au-Ge-based alloys are potential substitutes for Pb-rich solders currently used for high-temperature applications. In the present work, the wetting behavior of two Au-Ge-X (X = Sb, Sn) ternary alloys, i.e., Au-15Ge-17Sb and Au-13.7 Ge-15.3Sn (at.%), in contact with Cu and Ni substrates has been investigated. Au-13.7Ge-15.3Sn alloy showed complete wetting on both Cu and Ni substrates. Total spreading of Au-15Ge-17Sb alloy on Cu was also observed, while the final contact angle of this alloy on Ni was about 29°. Pronounced dissolution of Cu substrates into the solder alloys investigated was detected, while the formation of Ni-Ge intermetallic compounds at the interface of both solder/Ni systems suppressed the dissolution of Ni into the solder.

Nanoscale structure in AgSbTe2 determined by diffuse elastic neutron scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Specht, Eliot D; Ma, Jie; Delaire, Olivier A

2015-01-01

Diffuse elastic neutron scattering measurements confirm that AgSbTe2 has a hierarchical structure, with defects on length scales from nanometers to microns. While scattering from mesoscale structure is consistent with previously-proposed structures in which Ag and Sb order on a NaCl lattice, more diffuse scattering from nanoscale structure suggests a structural rearrangement in which hexagonal layers form a combination of (ABC), (ABA), and (AAB) stacking sequences. The AgCrSe2 structure is the best-fitting model for the local atomic arrangements.

Fluxless eutectic bonding of GaAs-on-Si by using Ag/Sn solder

NASA Astrophysics Data System (ADS)

Eo, Sung-Hwa; Kim, Dae-Seon; Jeong, Ho-Jung; Jang, Jae-Hyung

2013-11-01

Fluxless GaAs-on-Si wafer bonding using Ag/Sn solder was investigated to realize uniform and void-free heterogeneous material integration. The effects of the diffusion barrier, Ag/Sn thickness, and Ar plasma treatment were studied to achieve the optimal fluxless bonding process. Pt on a GaAs wafer and Mo on a Si wafer act as diffusion barriers by preventing the flow of Ag/Sn solder into both the wafers. The bonding strength is closely related to the Ag/Sn thickness and Ar plasma treatment. A shear strength test was carried out to investigate the bonding strength. Under identical bonding conditions, the Ag/Sn thickness was optimized to achieve higher bonding strength and to avoid the formation of voids due to thermal stress. An Ar plasma pretreatment process improved the bonding strength because the Ar plasma removed carbon contaminants and metal-oxide bonds from the metal surface.

Effects of Rapid Solidification on Phase Formation and Microstructure Evolution of AgSbTe₂-Based Thermoelectric Compounds.

PubMed

Castellero, Alberto; Fiore, Gianluca; Evenstein, Eliran; Baricco, Marcello; Amouyal, Yaron

2017-03-01

We report on rapid solidification of an Ag(16.7)Sb(30.0)Te(53.3) compound using planar flow casting to stabilize the δ-AgSbTe₂ single phase and avoid precipitation of the interconnected Sb₂Te₃ phase, which leads to deterioration of thermoelectric properties. Rapidly solidified samples are in form of flakes with different thickness (60–400 μm). Precipitation of Sb2Te₃ phase is fully inhibited in thin flakes (thickness below 100 μm), which consist of an homogeneous δ-AgSbTe₂ matrix, whereas isolated Sb₂Te₃ precipitates, dispersed throughout the δ-AgSbTe₂ matrix, were found in thick flakes (thickness above 100 μm). The lattice parameter of the δ-AgSbTe₂ phase progressively increases with the cooling rate, indicating progressive supersaturation of the matrix for high degree of supercooling. Bulk specimens were prepared by hot pressing of the rapidly solidified flakes to evaluate thermoelectric properties. After sintering of the rapidly solidified flakes, the differential scanning calorimetry (DSC) traces indicates partial decomposition of the non equilibrium δ-AgSbTe₂ into the stable phases. Measurements of the thermoelectric transport properties indicate the positive effects of rapid solidification on thermal conductivity and Seebeck coefficient and its negative effect on electrical conductivity, suggesting an operative way to improve thermoelectric performance.

Spin pumping and inverse Rashba-Edelstein effect in NiFe/Ag/Bi and NiFe/Ag/Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun

2015-03-20

The Rashba effect is an interaction between the spin and the momentum of electrons induced by the spin-orbit coupling in surface or interface states. Here, we measured the inverse Rashba-Edelstein effect via spin pumping in Ag/Bi and Ag/Sb interfaces. The spin current is injected from the ferromagnetic resonance of a NiFe layer towards the Rashba interfaces, where it is further converted into a charge current. While using spin pumping theory, we quantify the conversion parameter of spin to charge current to be 0.11 ± 0.02 nm for Ag/Bi and a factor of ten smaller for Ag/Sb. Furthermore, the relative strengthmore » of the effect is in agreement with spectroscopic measurements and first principles calculations. The spin pumping experiment offers a straight-forward approach of using spin current as an efficient probe for detecting interface Rashba splitting.« less

Electromigration effect upon the Sn-0.7 wt% Cu/Ni and Sn-3.5 wt% Ag/Ni interfacial reactions

NASA Astrophysics Data System (ADS)

Chen, Chih-ming; Chen, Sinn-wen

2001-08-01

This study investigates the effect of electromigration upon the interfacial reactions between the promising lead-free solders, Sn-Cu and Sn-Ag, with Ni substrate. Sandwich-type reaction couples, Sn-0.7 wt% Cu/Ni/Sn-0.7 wt% Cu and Sn-3.5 wt% Ag/Ni/Sn-3.5 wt% Ag, were reacted at 160, 180, and 200 °C for various lengths of time with and without the passage of electric currents. Without passage of electric currents through the couples, only one intermetallic compound Ni3Sn4 with ˜7 at. % Cu solubility was found at both interfaces of the Sn-0.7 wt% Cu/Ni couples. With the passage of an electric current of 500 A/cm2 density, the Cu6Sn5 phase was formed at the solder/Ni interface besides the Ni3Sn4 phase. Similar to those without the passage of electric currents, only the Ni3Sn4 phase was found at the Ni/solder interface. Directions of movement of electrons, Sn, and Cu atoms are the same at the solder/Ni interface, and the growth rates of the intermetallic layers were enhanced. At the Ni/solder interface, the electrons flow in the opposite direction of the Sn and Cu movement, and the growth rates of the intermetallic layers were retarded. Only the Ni3Sn4 phase was formed from the Sn-3.5 wt% Ag/Ni interfacial reaction with and without the passage of electric currents. Similar to the Sn-0.7 wt% Cu/Ni system, the movement of electrons enhances or retards the growth rates of the intermetallic layers at the solder/Ni and Ni/solder interfaces, respectively. Calculation results show the apparent effective charge za* decreases in magnitude with raising temperatures, which indicates the electromigration effect becomes insignificant at higher temperatures.

Effect of Silicon on Activity Coefficients of P, Bl, CD, SN, and AG in Liquid Fe-Si, and Implications for Differentiation and Core Formation

NASA Technical Reports Server (NTRS)

Righter, K.; Pando, K.; Ross, D. K.

2017-01-01

Cores of differentiated bodies (Earth, Mars, Mercury, Moon, Vesta) contain light elements such as S, C, Si, and O. We have previously measured small effects of Si on metal-silicate partitioning of Ni and Co [1,2], and larger effects for Mo, Ge, Sb, As [2]. The effect of Si on many siderophile elements could be an important, and as yet unquantified, influence on the core-mantle partitioning of SE. Here we report new experiments designed to quantify the effect of Si on the partitioning of Bi, Cd, Sn, Ag, and P between metal and silicate melt. The results will be applied to Earth, Mars, Mercury, Moon, and Vesta, for which we have excellent constraints on the mantle Bi, Cd, Sn, Ag, and P concentrations from mantle and/or basalt samples.

Constitutive Behavior of Mixed Sn-Pb/Sn-3.0Ag-0.5Cu Solder Alloys

NASA Astrophysics Data System (ADS)

Tucker, J. P.; Chan, D. K.; Subbarayan, G.; Handwerker, C. A.

2012-03-01

During the transition from Pb-containing solders to Pb-free solders, joints composed of a mixture of Sn-Pb and Sn-Ag-Cu often result from either mixed assemblies or rework. Comprehensive characterization of the mechanical behavior of these mixed solder alloys resulting in a deformationally complete constitutive description is necessary to predict failure of mixed alloy solder joints. Three alloys with 1 wt.%, 5 wt.%, and 20 wt.% Pb were selected so as to represent reasonable ranges of Pb contamination expected from different 63Sn-37Pb components mixed with Sn-3.0Ag-0.5Cu. Creep and displacement-controlled tests were performed on specially designed assemblies at temperatures of 25°C, 75°C, and 125°C using a double lap shear test setup that ensures a nearly homogeneous state of plastic strain at the joint interface. The observed changes in creep and tensile behavior with Pb additions were related to phase equilibria and microstructure differences observed through differential scanning calorimetric and scanning electron microscopic cross-sectional analysis. As Pb content increased, the steady-state creep strain rates increased, and primary creep decreased. Even 1 wt.% Pb addition was sufficient to induce substantially large creep strains relative to the Sn-3.0Ag-0.5Cu alloy. We describe rate-dependent constitutive models for Pb-contaminated Sn-Ag-Cu solder alloys, ranging from the traditional time-hardening creep model to the viscoplastic Anand model. We illustrate the utility of these constitutive models by examining the inelastic response of a chip-scale package (CSP) under thermomechanical loading through finite-element analysis. The models predict that, as Pb content increases, total inelastic dissipation decreases.

Synthesis and electrochemical performances of amorphous carbon-coated Sn Sb particles as anode material for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Wang, Zhong; Tian, Wenhuai; Liu, Xiaohe; Yang, Rong; Li, Xingguo

2007-12-01

The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles. The as-prepared composite materials show much improved electrochemical performances as anode materials for lithium-ion batteries compared with Sn-Sb alloy and carbon alone. This amorphous carbon-coated Sn-Sb particle is extremely promising anode materials for lithium secondary batteries and has a high potentiality in the future use.

Electrical and mechanical properties of Sn-5wt.%Sb alloy with annealing temperature

NASA Astrophysics Data System (ADS)

Said Gouda, El; Ahmed, E. M.; Saad Allah, F. A.

2009-01-01

A binary Sn-5wt.%Sb solder alloy was chosen as a potential alternative to Sn-Pb solder alloy to be subjected to many studies. It was casted from the liquid state, cold drawn into wires of 1 mm diameters. The study includes the structure, electrical resistivity, tensile strength, hardness and indentation creep behavior using XRD, four probes electrical circuit, conventional tensile testing machine, Vickers microhardness tester, respectively. These properties were carried out for the cold worked alloy and after annealing at 393 and 473 K for 60 min. It was found that annealed samples exhibit more precipitations of the intermetallic compounds SnSb, higher lattice parameters and higher crystallite size, while have lower lattice-strain induced due to the cold working process. These structural changes greatly affect the electrical resistivity and mechanical properties of this alloy.

Natural nanostructure and superlattice nanodomains in AgSbTe{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlton, Christopher E.; De Armas, Ricardo; Shao-Horn, Yang, E-mail: delaireoa@ornl.gov, E-mail: shaohorn@mit.edu

2014-04-14

AgSbTe{sub 2} has long been of interest for thermoelectric applications because of its favorable electronic properties and its low lattice thermal conductivity of ∼0.7 W/mK. In this work, we report new findings from a high-resolution transmission electron microscopy study revealing two nanostructures in single crystal Ag{sub 1−x}Sb{sub 1+x}Sb{sub 2+x} (with x = 0, 0.1, 0.2); (i) a rippled natural nanostructure with a period of ∼2.5–5 nm and (ii) superlattice ordered nanodomains consistent with cation ordering predicted in previous density functional theory studies. These nanostructures, combined with point-defects, probably serve as sources of scattering for phonons, thereby yielding a low lattice thermal conductivity over amore » wide temperature range.« less

High temperature neutron powder diffraction study of the Cu12Sb4S13 and Cu4Sn7S16 phases

NASA Astrophysics Data System (ADS)

Lemoine, Pierric; Bourgès, Cédric; Barbier, Tristan; Nassif, Vivian; Cordier, Stéphane; Guilmeau, Emmanuel

2017-03-01

Ternary copper-containing sulfides Cu12Sb4S13 and Cu4Sn7S16 have attracted considerable interest since few years due to their high-efficiency conversion as absorbers for solar energy and promising thermoelectric materials. We report therein on the decomposition study of Cu12Sb4S13 and Cu4Sn7S16 phases using high temperature in situ neutron powder diffraction. Our results obtained at a heating rate of 2.5 K/min indicate that: (i) Cu12Sb4S13 decomposes above ≈792 K into Cu3SbS3, and (ii) Cu4Sn7S16 decomposes above ≈891 K into Sn2S3 and a copper-rich sulfide phase of sphalerite ZnS-type structure with an assumed Cu3SnS4 stoichiometry. Both phase decompositions are associated to a sulfur volatilization. While the results on Cu12Sb4S13 are in fair agreement with recent published data, the decomposition behavior of Cu4Sn7S16 differs from other studies in terms of decomposition temperature, thermal stability and products of reaction. Finally, the crystal structure refinements from neutron powder diffraction data are reported and discussed for the Cu4Sn7S16 and tetrahedrite Cu12Sb4S13 phases at 300 K, and for the high temperature form of skinnerite Cu3SbS3 at 843 K.

The Reliability of Microalloyed Sn-Ag-Cu Solder Interconnections Under Cyclic Thermal and Mechanical Shock Loading

NASA Astrophysics Data System (ADS)

Mattila, Toni T.; Hokka, Jussi; Paulasto-Kröckel, Mervi

2014-11-01

In this study, the performance of three microalloyed Sn-Ag-Cu solder interconnection compositions (Sn-3.1Ag-0.52Cu, Sn-3.0Ag-0.52Cu-0.24Bi, and Sn-1.1Ag-0.52Cu-0.1Ni) was compared under mechanical shock loading (JESD22-B111 standard) and cyclic thermal loading (40 ± 125°C, 42 min cycle) conditions. In the drop tests, the component boards with the low-silver nickel-containing composition (Sn-Ag-Cu-Ni) showed the highest average number of drops-to-failure, while those with the bismuth-containing alloy (Sn-Ag-Cu-Bi) showed the lowest. Results of the thermal cycling tests showed that boards with Sn-Ag-Cu-Bi interconnections performed the best, while those with Sn-Ag-Cu-Ni performed the worst. Sn-Ag-Cu was placed in the middle in both tests. In this paper, we demonstrate that solder strength is an essential reliability factor and that higher strength can be beneficial for thermal cycling reliability but detrimental to drop reliability. We discuss these findings from the perspective of the microstructures and mechanical properties of the three solder interconnection compositions and, based on a comprehensive literature review, investigate how the differences in the solder compositions influence the mechanical properties of the interconnections and discuss how the differences are reflected in the failure mechanisms under both loading conditions.

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

NASA Astrophysics Data System (ADS)

Korhonen, E.; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-02-01

We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation.

Soft chemical synthesis of Ag{sub 3}SbS{sub 3} with efficient and recyclable visible light photocatalytic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gusain, Meenakshi; Rawat, Pooja; Nagarajan, Rajamani, E-mail: rnagarajan@chemistry.du.ac.in

2014-12-15

Highlights: • Highly crystalline Ag{sub 3}SbS{sub 3} synthesized using soft chemical approach. • First time report of photocatalytic activity of Ag{sub 3}SbS{sub 3}. • Ag{sub 3}SbS{sub 3} degraded the harmful organic dyes rapidly under visible radiation. • Pseudo first order kinetics have been followed in these sets of reactions. • Up to 90% of Methylene Blue degraded even after 4th cycle of catalyst reuse. • Structure of catalyst is intact after reuse. • As the catalyst is heavy, its separation after use is quite simple. - Abstract: Application of Ag{sub 3}SbS{sub 3}, obtained by soft chemical approach involving rapid reactionmore » of air stable metal–thiourea complexes in ethylene glycol medium, as visible light photocatalyst for the degradation of dye solutions was investigated. Ag{sub 3}SbS{sub 3} was confirmed by high resolution powder X-ray diffraction pattern and its no defined morphology was present in SEM images. From UV–vis spectroscopy measurements, optical band gap of 1.77 eV was deduced for Ag{sub 3}SbS{sub 3}. Rapid degradation kinetics and recyclability was exhibited by Ag{sub 3}SbS{sub 3} towards Methylene Blue, Methyl Orange, Malachite Green, and Rhodamine 6G dye solutions under visible radiation. All these processes followed pseudo first order kinetics. High surface area (6.39 m{sup 2}/g), with mesopores (3.81 nm), arising from solvent mediated synthesis of Ag{sub 3}SbS{sub 3} has been correlated to its catalytic activity.« less

Shift of the reactive species in the Sb-SnO2-electrocatalyzed inactivation of e. coli and degradation of phenol: effects of nickel doping and electrolytes.

PubMed

Yang, So Young; Kim, Dongseog; Park, Hyunwoong

2014-01-01

The electrocatalytic behavior and anodic performance of Sb-SnO2 and nickel-doped Sb-SnO2 (Ni-Sb-SnO2) in sodium sulfate and sodium chloride electrolytes were compared. Nickel-doping increased the service lifetime by a factor of 9 and decreased the charge transfer resistance of the Sb-SnO2 electrodes by 65%. More importantly, Ni doping improved the electrocatalytic performance of Sb-SnO2 for the remediation of aqueous phenol and the inactivation of E. coli by a factor of more than 600% and ∼20%, respectively. In the sulfate electrolyte, the primary reactive oxygen species (ROS) identified were OH radicals (Faradaic efficiency η = 2.4%) with trace levels of ozone and hydrogen peroxide (η < 0.01%) at Sb-SnO2. In contrast, the primary ROS at Ni-Sb-SnO2 was ozone (η = 9.3%) followed by OH radicals (η = 3.7%). In the chloride electrolyte, the production of hypochlorite (OCl(-)) was higher (η = 0.73%) than that of ozone (η = 0.13%) at Sb-SnO2, whereas the level of ozone (η = 13.6%) was much higher than that of hypochlorite (η = 0.24%) at Ni-Sb-SnO2. Based on the shift of the reactive species, the primary effect of Ni doping is to catalyze the six-electron oxidation of water to ozone and inhibit the competing one or two-electron oxidation of water (generation of OH radicals, hydrogen peroxides, and hypochlorites). A range of electrochemical and surface analyses were performed, and a detailed mechanism was proposed.

Wetting and Brazing of Alumina by Sn0.3Ag0.7Cu-Ti Alloy

NASA Astrophysics Data System (ADS)

Kang, J. R.; Song, X. G.; Hu, S. P.; Liu, D.; Guo, W. J.; Fu, W.; Cao, J.

2017-12-01

The wetting behavior of Sn0.3Ag0.7Cu (wt pct) with the addition of Ti on alumina was studied at 1273 K (1000 °C) using the sessile drop method. The wettability of Sn0.3Ag0.7Cu is significantly enhanced with the addition of Ti. Ti accumulates on the interface and reacts with O, producing TiO and yields good wetting. However, wetting is inhibited in high Ti containing droplets as intense Ti-Sn reactions take place. As a result of these competing reactions, the wettability of Sn0.3Ag0.7Cu-2Ti is the best, with the lowest equilibrium contact angle 24.6 deg. Thermodynamic calculations indicate that the value of the final contact angle cos θ varies linearly with Ti fraction in the Ti-Sn reaction-free case. The influence of the Ti-Sn reaction on wetting is quantitatively characterized by the deviation from the theoretical data. The adverse impact of Ti-Sn reaction on wetting increases in intensity with the droplets containing more Ti as the reaction between Ti and Sn becomes more intense and rapid. Alumina/alumina is brazed using different Ti containing Sn0.3Ag0.7Cu-Ti brazing metals at 1273 K (1000 °C) for 25 minutes. Pores are observed in joints prepared with Sn0.3Ag0.7Cu-0.7, 3, and 4Ti because of poor wettability. The highest joints shear strength of 28.6 MPa is obtained with Sn0.3Ag0.7Cu-2Ti.

Spin pumping and inverse Rashba-Edelstein effect in NiFe/Ag/Bi and NiFe/Ag/Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei, E-mail: zwei@anl.gov; Jungfleisch, Matthias B.; Jiang, Wanjun

2015-05-07

The Rashba effect is an interaction between the spin and the momentum of electrons induced by the spin-orbit coupling in surface or interface states. We measured the inverse Rashba-Edelstein effect via spin pumping in Ag/Bi and Ag/Sb interfaces. The spin current is injected from the ferromagnetic resonance of a NiFe layer towards the Rashba interfaces, where it is further converted into a charge current. Using spin pumping theory, we quantify the conversion parameter of spin to charge current to be 0.11 ± 0.02 nm for Ag/Bi and a factor of ten smaller for Ag/Sb. The relative strength of the effect is in agreementmore » with spectroscopic measurements and first principles calculations. We also vary the interlayer materials to study the voltage output in relation to the change of the effective spin mixing conductance. The spin pumping experiment offers a straight-forward approach of using spin current as an efficient probe for detecting interface Rashba splitting.« less

Disruption of crystalline structure of Sn3.5Ag induced by electric current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Han-Chie; Lin, Kwang-Lung, E-mail: matkllin@mail.ncku.edu.tw; Wu, Albert T.

2016-03-21

This study presented the disruption of the Sn and Ag{sub 3}Sn lattice structures of Sn3.5Ag solder induced by electric current at 5–7 × 10{sup 3} A/cm{sup 2} with a high resolution transmission electron microscope investigation and electron diffraction analysis. The electric current stressing induced a high degree of strain on the alloy, as estimated from the X-ray diffraction (XRD) peak shift of the current stressed specimen. The XRD peak intensity of the Sn matrix and the Ag{sub 3}Sn intermetallic compound diminished to nearly undetectable after 2 h of current stressing. The electric current stressing gave rise to a high dislocation density ofmore » up to 10{sup 17}/m{sup 2}. The grain morphology of the Sn matrix became invisible after prolonged current stressing as a result of the coalescence of dislocations.« less

A dislocation density based micromechanical constitutive model for Sn-Ag-Cu solder alloys

NASA Astrophysics Data System (ADS)

Liu, Lu; Yao, Yao; Zeng, Tao; Keer, Leon M.

2017-10-01

Based on the dislocation density hardening law, a micromechanical model considering the effects of precipitates is developed for Sn-Ag-Cu solder alloys. According to the microstructure of the Sn-3.0Ag-0.5Cu thin films, intermetallic compounds (IMCs) are assumed as sphere particles embedded in the polycrystalline β-Sn matrix. The mechanical behavior of polycrystalline β-Sn matrix is determined by the elastic-plastic self-consistent method. The existence of IMCs not only impedes the motion of dislocations but also increases the overall stiffness. Thus, a dislocation density based hardening law considering non-shearable precipitates is adopted locally for single β-Sn crystal, and the Mori-Tanaka scheme is applied to describe the overall viscoplastic behavior of solder alloys. The proposed model is incorporated into finite element analysis and the corresponding numerical implementation method is presented. The model can describe the mechanical behavior of Sn-3.0Ag-0.5Cu and Sn-1.0Ag-0.5Cu alloys under high strain rates at a wide range of temperatures. Furthermore, the overall Young’s modulus changes due to different contents of IMCs is predicted and compared with experimental data. Results show that the proposed model can describe both elastic and inelastic behavior of solder alloys with reasonable accuracy.

Cu6Sn5 Whiskers Precipitated in Sn3.0Ag0.5Cu/Cu Interconnection in Concentrator Silicon Solar Cells Solder Layer

PubMed Central

Zhang, Liang; Liu, Zhi-quan; Yang, Fan; Zhong, Su-juan

2017-01-01

Cu6Sn5 whiskers precipitated in Sn3.0Ag0.5Cu/Cu interconnection in concentrator silicon solar cells solder layer were found and investigated after reflow soldering and during aging. Ag3Sn fibers can be observed around Cu6Sn5 whiskers in the matrix microstructure, which can play an active effect on the reliability of interconnection. Different morphologies of Cu6Sn5 whiskers can be observed, and hexagonal rod structure is the main morphology of Cu6Sn5 whiskers. A hollow structure can be observed in hexagonal Cu6Sn5 whiskers, and a screw dislocation mechanism was used to represent the Cu6Sn5 growth. Based on mechanical property testing and finite element simulation, Cu6Sn5 whiskers were regarded as having a negative effect on the durability of Sn3.0Ag0.5Cu/Cu interconnection in concentrator silicon solar cells solder layer. PMID:28772686

Maximization of current efficiency for organic pollutants oxidation at BDD, Ti/SnO2-Sb/PbO2, and Ti/SnO2-Sb anodes.

PubMed

Xing, Xuan; Ni, Jinren; Zhu, Xiuping; Jiang, Yi; Xia, Jianxin

2018-08-01

Whereas electrochemical oxidation is noted for its ability to degrade bio-refractory organics, it has also been incorrectly criticized for excessive energy consumption. The present paper rectifies this misunderstanding by demonstrating that the energy actually consumed in the degradation process is much less than that wasted in the side reaction of oxygen evolution. To minimize the side reaction, the possible highest instantaneous current efficiency (PHICE) for electrochemical oxidation of phenol at Boron-doped Diamond (BDD), Ti/SnO 2 -Sb/PbO 2 (PbO 2 ), and Ti/SnO 2 -Sb (SnO 2 ) anodes has been investigated systematically, and found to reach almost 100% at the BDD anode compared with 23% at the PbO 2 anode and 9% at the SnO 2 anode. The significant discrepancy between PHICE values at the various anodes is interpreted in terms of different existing forms of hydroxyl radicals. For each anode system, the PHICEs are maintained experimentally using a computer-controlled exponential decay current mode throughout the electrolysis process. For applications, the minimized energy consumption is predicted by response surface methodology, and demonstrated for the BDD anode system. Consequently, almost 100% current efficiency is achieved (for a relatively meagre energy consumption of 17.2 kWh kgCOD -1 ) along with excellent COD degradation efficiency by optimizing the initial current density, flow rate, electrolysis time, and exponential decay constant. Compared with galvanostatic conditions, over 70% of the energy is saved in the present study, thus demonstrating the great potential of electrochemical oxidation for practical applications. Copyright © 2018 Elsevier Ltd. All rights reserved.

Photoreduction of Carbon Dioxide to Methane Over Sb1.5Sn8.5-x Ti x O19.0 with High Conductivity.

PubMed

Do, Jeong Yeon; Kwak, Byeong Sub; Kang, Misook

2018-09-01

In order to enhance the photoreduction of CO2 to CH4, a new type of photocatalyst, Sb1.5Sn8.5-xTixO19.0, with high conductivity and low bandgap was developed by partially incorporating Ti into the framework of Sb1.5Sn8.5O19.0 (antimony-doped tin oxide, ATO) using a controlled hydrothermal method. XRD and TEM analyses indicated that the Sb1.5Sn8.5-xTixO19.0 particles exhibited a tetragonal crystal structure and were approximately 20 nm in size. Furthermore, the bandgap and conductivity of these materials increased with increasing Ti content. A study of the photoreduction of CO2 with H2O revealed a remarkable increase in the generation of CH4 over the Sb1.5Sn8.5-xTixO19.0 catalysts. In particular, CH4 generation was the highest when Sb1.5Sn8.5Ti1.0O19.0 was used as the photocatalyst, and was three-fold higher than that achieved by using anatase TiO2. Photoluminescence studies showed that the enhanced photocatalytic activity of the Sb1.5Sn8.5-xTixO19.0 materials could be attributed to the interfacial transfer of photogenerated charges, which led to an effective charge separation and inhibition of the recombination of photogenerated electron-hole (e-/h+) pairs.

Wetting reaction of Sn-Ag based solder systems on Cu substrates plated with Au and/or Pd layer

NASA Astrophysics Data System (ADS)

Liu, C. Y.; Li, Jian; Vandentop, G. J.; Choi, W. J.; Tu, K. N.

2001-05-01

The wetting behavior of SnAg based Pb-free solders on Cu and Cu substrates plated with Au, Pd, and Au/Pd thin films have been studied. The wetting angle and kinetics of interfacial reaction were measured. The Au-plated substrates exhibit better wetting than the Pd-plated substrates. In the case of SnAg on Pd-plated Cu, SEM observation revealed that the solder cap was surrounded by an innerring of Cu-Sn compound and an outer ring of Pd-Sn compound. This implies that the molten SnAg solder had removed the Pd and wetted the Cu directly in the equilibrium state. The effects of pre-doping Cu in the SnAg solder on wetting behavior were also investigated. We found that wettability decreases with increasing Cu content in the solder. We also observed that the SnAgCu solders have a lower Cu consumption rate than the SnAg solder.

A study of Bi-Pb-Sn-Cd-Sb penta-alloys rapidly quenched from melt

NASA Astrophysics Data System (ADS)

Kamal, M.; El-Bediwi, A. B.

2004-11-01

Optical microscopy, X-ray diffractometry, the double bridge method, the Vickers microhardness testing and dynamic resonance techniques have been used to investigate structure, electrical resistivity, hardness, internal friction and elastic modulus of quenched Bi-Pb-Sn-Cd-Sb penta-alloys. The properties of these penta-alloys are greatly affected by rapid quenching. The intermetallic compound chi(Pb-Bi) or Bi3Pb7 is obtained after rapid quenching using the melt-spinning technique, and this is in agreement with reports by other authors [Marshall, T.J., Mott, G. T. and Grieverson, M. H. (1975). Br. J. Radiol., 48, 924, Kamal, M., El-Bediwi, A. B. and Karman, M. B. (1998). Structure, mechanical properties and electrical resistivity of rapidly solidified Pb-Sn-Cd and Pb-Bi-Sn-Cd alloys. J. Mater. Sci.: Mater. Electron., 9, 425, Borromee-Gautier, C., Giessen, B. C. and Grrant, N. J. (1968). J. Chem. Phys., 48,1905, Moon, K.-W., Boettinger, W. J., Kanner, U. R., Handwerker, C. A. and Lee, D.-J. (2001). The effect of Pb contamination on the solidification behavior of Sn-Bi solders. J. Electron. Mater, 30, 45.]. The quenched Bi43.5Pb44.5Cd5Sn2Sb5 alloy has important properties for safety devices in fire detection and extinguishing systems.

Co(x)Ni(4-x)Sb(12-y)Sn(y) Ternary Skutterudites: Processing and Thermoelectric Properties

NASA Technical Reports Server (NTRS)

Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

2014-01-01

Skutterudites have proven to be a useful thermoelectric system as a result of their high figure of merit, favorable mechanical properties, and good thermal stability. Binary skutterudites have received the majority of interest in recent years, as a result of successful double and triple filling schemes. Ternary skutterudites, such as Ni4Sb7Sn5, also demonstrate good thermoelectric performance, with high power factor and low thermal conductivity. Ternary skutterudites, as contrasted to binary systems, provide more possibility for tuning electronic structure as substitutions can be studied on three elements. The Co(x)Ni(4-x)Sb(12-y)Sn(y) system has been investigated as both a p- and n-type thermoelectric material, stable up to 200 C. The system is processed through a combination of solidification, mechanical alloying, and hot pressing steps. Rietveld structure refinement has revealed an interesting occupancy of Sn on both the 24g Wyckoff position with Sb as well as the 2a position as a rattler. In addition to thermoelectric properties, detailed processing routes have been investigated on the system.

Extraordinary Thermoelectric Performance Realized in Hierarchically Structured AgSbSe2 with Ultralow Thermal Conductivity.

PubMed

Gao, Weihong; Wang, Zhenyou; Huang, Jin; Liu, Zihang

2018-05-24

Thermoelectric conversion from low-grade heat to electricity is regarded as the highly reliable and environmentally friendly technology in energy-harvesting area. However, how to develop efficient thermoelectric materials using a simple fabrication method is still a critical challenge in thermoelectric community. Here, we first fabricate the high thermoelectric performance of Ca-doped AgSbSe 2 with a hierarchical microstructure using a facile approach, namely, mechanical alloying (for only 30 min) and a quick hot-pressing method. The hierarchical microstructure, including point defects (atomic scale), dislocations, and nanoprecipitates (nanoscale) as well as grain boundaries (microscale), strongly scatters phonons with comparable sizes without deterioration of carrier mobility. Because of the higher carrier concentration of nanostructured AgSbSe 2 than that of coarse-grain AgSbSe 2 , power factor can also be improved slightly after nanostructuring. Ca doping further optimizes the carrier concentration and creates the point-defect scattering of phonons, leading to the ultralow lattice thermal conductivity ∼0.27 W m -1 K -1 at 673 K and thus largely improving the peak ZT up to 1.2. The high thermoelectric performance in combination with a facile fabrication method highlights AgSbSe 2 -based materials as robust thermoelectric candidates for energy harvesting.

Hierarchical assembly of AgCl@Sn-TiO2 microspheres with enhanced visible light photocatalytic performance

NASA Astrophysics Data System (ADS)

Ganeshraja, Ayyakannu Sundaram; Zhu, Kaixin; Nomura, Kiyoshi; Wang, Junhu

2018-05-01

The hierarchical silver chloride loaded tin-doped titania (AgCl@Sn-TiO2) microspheres were first time prepared by a hydrothermal method and annealing at different temperatures. The catalyst showed the enhanced visible light photocatalytic activity as compared to the plasmonic photocatalysts of AgCl and Ag/AgCl, and commercial Degussa P25 (TiO2). The improved efficiency is considered to local surface plasmonic resonance (AgCl could reduce to Ag0 during photocatalytic reaction) in enhanced broad band visible light absorption in addition to the characteristics of heterojunction between Sn-TiO2 and AgCl NPs. Moreover, the surface and bulk properties of as-synthesized samples were analyzed by 119Sn Mössbauer spectroscopy. The magnetic property of the bulk was studied as a function of magnetic field with different temperatures. These results signify the clear details of the magnetic and visible light photocatalytic activities of hierarchical AgCl@Sn-TiO2 microspheres.

The effect of intermetallic compound morphology on Cu diffusion in Sn-Ag and Sn-Pb solder bump on the Ni/Cu Under-bump metallization

NASA Astrophysics Data System (ADS)

Jang, Guh-Yaw; Duh, Jenq-Gong

2005-01-01

The eutectic Sn-Ag solder alloy is one of the candidates for the Pb-free solder, and Sn-Pb solder alloys are still widely used in today’s electronic packages. In this tudy, the interfacial reaction in the eutectic Sn-Ag and Sn-Pb solder joints was investigated with an assembly of a solder/Ni/Cu/Ti/Si3N4/Si multilayer structures. In the Sn-3.5Ag solder joints reflowed at 260°C, only the (Ni1-x,Cux)3Sn4 intermetallic compound (IMC) formed at the solder/Ni interface. For the Sn-37Pb solder reflowed at 225°C for one to ten cycles, only the (Ni1-x,Cux)3Sn4 IMC formed between the solder and the Ni/Cu under-bump metallization (UBM). Nevertheless, the (Cu1-y,Niy)6Sn5 IMC was observed in joints reflowed at 245°C after five cycles and at 265°C after three cycles. With the aid of microstructure evolution, quantitative analysis, and elemental distribution between the solder and Ni/Cu UBM, it was revealed that Cu content in the solder near the solder/IMC interface played an important role in the formation of the (Cu1-y,Niy)6Sn5 IMC. In addition, the diffusion behavior of Cu in eutectic Sn-Ag and Sn-Pb solders with the Ni/Cu UBM were probed and discussed. The atomic flux of Cu diffused through Ni was evaluated by detailed quantitative analysis in an electron probe microanalyzer (EPMA). During reflow, the atomic flux of Cu was on the order of 1016-1017 atoms/cm2sec in both the eutectic Sn-Ag and Sn-Pb systems.

Microstructural evolution and mechanical properties of SnAgCu alloys

NASA Astrophysics Data System (ADS)

Fouassier, O.; Heintz, J.-M.; Chazelas, J.; Geffroy, P.-M.; Silvain, J.-F.

2006-08-01

Lead containing solder paste is now considered as an environmental threat. In order to eliminate this undesirable environmental impact associated to their production, a family of lead-free solder joint, Sn-3.8Ag-0.7Cu, is proposed. Microstructural and mechanical data of this solder joint have been acquired and compared with the most common used SnPb solder paste. The evolution of the microstructure as well as the failure mode and the mechanical properties of SnAgCu solder joint are discussed as a function of strain rate, annealing treatments, and testing temperature. Tensile tests have been performed, at temperatures ranging from -50to+150°C, on bulk samples. Changes of the mechanical properties of bulk tested samples are actually correlated with microstructural changes, as shown by transmission electronic microscopy investigations.

Line length dependence of threshold current density and driving force in eutectic SnPb and SnAgCu solder electromigration

NASA Astrophysics Data System (ADS)

Yoon, Min-Seung; Ko, Min-Ku; Kim, Bit-Na; Kim, Byung-Joon; Park, Yong-Bae; Joo, Young-Chang

2008-04-01

The relationship between the threshold current density and the critical line length in eutectic SnPb and SnAgCu electromigrations were examined using solder lines with the various lengths ranging from 100to1000μm. When the electron wind-force was balanced by the back-stress gradient force, the net flux of electromigration is zero, at which the current density and line length are defined as the threshold current density and the critical length, respectively. It was found that in SnAgCu electromigration, the 1/L dependence on the threshold current density showed good agreement, whereas the threshold current densities of the eutectic SnPb deviated from the 1/L dependence. The balance between the electron wind-force and the back-stress gradient force was the main factor determining the threshold product of SnAgCu electromigration. On the other hand, in the case of eutectic SnPb, the chemical driving force is contributed as a back-flux force in addition to the back-stress gradient force. The existence of the chemical driving force was caused by the nonequilibrium Pb concentration inside the Pb-rich phases between the cathode and anode during the electromigration procedure.

Influence of Sn on the thermoelectric properties of (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, V.A., E-mail: kulb@mig.phys.msu.ru; Kytin, V.G.; Kudryashov, A.A.

2012-09-15

The influence of tin on the thermoelectric properties of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. The temperature dependence of the Seebeck coefficient S, the electrical conductivity {sigma}, the heat conductivity k and the thermoelectric figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. By an increase the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The heat conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to the Sn doping, while the electrical conductivitymore » {sigma} increases in the temperature interval about 200« less

Nanoscale characterization of 1D Sn-3.5Ag nanosolders and their application into nanowelding at the nanoscale

NASA Astrophysics Data System (ADS)

Zhang, Hong; Zhang, Junwei; Lan, Qianqian; Ma, Hongbin; Qu, Ke; Inkson, Beverley J.; Mellors, Nigel J.; Xue, Desheng; Peng, Yong

2014-10-01

One-dimensional Sn-3.5Ag alloy nanosolders have been successfully fabricated by a dc electrodeposition technique into nanoporous templates, and their soldering quality has been demonstrated in nanoscale electrical welding for the first time, which indicates that they can easily form remarkably reliable conductive joints. The electrical measurement shows that individual 1D Sn-3.5Ag nanosolders have a resistivity of 28.9 μΩ·cm. The morphology, crystal structure and chemistry of these nanosolders have been characterized at the nanoscale. It is found that individual 1D Sn-3.5Ag alloy nanosolders have a continuous morphology and smooth surface. XPS confirms the presence of tin and silver with a mass ratio of 96.54:3.46, and EDX elemental mappings clearly reveal that the Sn and Ag elements have a uniform distribution. Coveragent beam electron diffractions verify that the crystal phases of individual 1D Sn-3.5Ag alloy nanosolders consist of matrix β-Sn and the intermetallic compound Ag3Sn. The reflow experiments reveal that the eutectic composition of the 1D Sn-Ag alloy nanowire is shifted to the Sn rich corner. This work may contribute one of the most important tin-based alloy nanosolders for future nanoscale welding techniques, which are believed to have broad applications in nanotechnology and the future nano-industry.

Effect of Cu concentration on morphology of Sn-Ag-Cu solders by mechanical alloying

NASA Astrophysics Data System (ADS)

Kao, Szu-Tsung; Duh, Jenq-Gong

2004-12-01

The mechanical alloying (MA) process is considered an alternative approach to produce solder materials. In this study, the effect of Cu concentration in the ternary Sn-3.5Ag-xCu (x=0.2, 0.7, and 1) solder by MA was investigated. The (Cu,Sn) solid solution was precipitated as the Cu6Sn5 intermetallic compound (IMC), which was distributed nonuniformly through the microstructure. The Cu6Sn5 IMC, which was present in the SnAgCu solder with high Cu composition, causes the as-milled MA particle to fracture to a smaller size. Appreciable distinction on morphology of as-milled MA powders with different Cu content was revealed. When the Cu concentration was low (x=0.2), MA particle aggregated to a spherical ingot with large particle size. For higher Cu concentration (x=0.7 and x=1), the MA particle turned to flakes with smaller particle size. The distinction of the milling mechanism of Sn-3.5Ag-xCu (x=0.2, 0.7, and 1) solder by the MA process was discussed. An effective approach was developed to reduce the particle size of the SnAgCu solder from 1 mm down to 10-100 µm by doping the Cu6Sn5 nanoparticle during the MA process. In addition, the differential scanning calorimetry (DSC) results also ensure the compatibility to apply the solder material for the reflow process.

Impact of Nb vacancies and p-type doping of the NbCoSn-NbCoSb half-Heusler thermoelectrics.

PubMed

Ferluccio, Daniella A; Smith, Ronald I; Buckman, Jim; Bos, Jan-Willem G

2018-02-07

The half-Heuslers NbCoSn and NbCoSb have promising thermoelectric properties. Here, an investigation of the NbCo 1+y Sn 1-z Sb z (y = 0, 0.05; 0 ≤ z ≤ 1) solid-solution is presented. In addition, the p-type doping of NbCoSn using Ti and Zr substitution is investigated. Rietveld analysis reveals the gradual creation of Nb vacancies to compensate for the n-type doping caused by the substitution of Sb in NbCoSn. This leads to a similar valence electron count (∼18.25) for the NbCo 1+y Sn 1-z Sb z samples (z > 0). Mass fluctuation disorder due to the Nb vacancies strongly decreases the lattice thermal conductivity from 10 W m -1 K -1 (z = 0) to 4.5 W m -1 K -1 (z = 0.5, 1). This is accompanied by a transition to degenerate semiconducting behaviour leading to large power factors, S 2 /ρ = 2.5-3 mW m -1 K -2 and figures of merit, ZT = 0.25-0.33 at 773 K. Ti and Zr can be used to achieve positive Seebeck values, e.g. S = +150 μV K -1 for 20% Zr at 773 K. However, the electrical resistivity, ρ 323K = 27-35 mΩ cm, remains too large for these materials to be considered useful p-type materials.

Microstructures and fatigue life of SnAgCu solder joints bearing Nano-Al particles in QFP devices

NASA Astrophysics Data System (ADS)

Zhang, Liang; Fan, Xi-ying; Guo, Yong-huan; He, Cheng-wen

2014-05-01

Microstructures and fatigue life of SnAgCu and SnAgCu bearing nano-Al particles in QFP (Quad flat package) devices were investigated, respectively. Results show that the addition of nano-Al particles into SnAgCu solder can refine the microstructures of matrix microstructure. Moreover, the nano-Al particles present in the solder matrix, act as obstacles which can create a back stress, resisting the motion of dislocations. In QFP device, it is found that the addition of nano-Al particles can increase the fatigue life by 32% compared with the SnAgCu solder joints during thermal cycling loading.

Comparative study on thermodynamic characteristics of AgCuZnSn brazing alloys

NASA Astrophysics Data System (ADS)

Wang, Xingxing; Li, Shuai; Peng, Jin

2018-01-01

AgCuZnSn brazing alloys were prepared based on the BAg50CuZn filler metal through electroplating diffusion process, and melting alloying method. The thermodynamics of phase transformations of those fillers were analyzed by non-isothermal differentiation and integration methods of thermal analysis kinetics. In this study, it was demonstrated that as the Sn content increased, the reaction fractional integral curves of AgCuZnSn fillers from solid to liquid became straighter at the endothermic peak. Under the same Sn contents, the reaction fractional integral curve of the Sn-plated filler metal was straighter, and the phase transformation activation energy was higher compared to the traditional silver filler metal. At the 7.2 wt% Sn content, the activation energies and pre-exponential factors of the two fillers reached the maximum, then the phase transformation rate equations of the Sn-plated silver filler and the traditional filler were determined as: k = 1.41 × 1032exp(-5.56 × 105/RT), k = 7.29 × 1020exp(-3.64 × 105/RT), respectively.

Internally consistent database for sulfides and sulfosalts in the system Ag 2S-Cu 2S-ZnS-Sb 2S 3-As 2S 3

NASA Astrophysics Data System (ADS)

Sack, Richard O.

2000-11-01

An updated thermodynamic database for Ag 2S-Cu 2S-ZnS-Sb 2S 3-As 2S 3 sulfides and sulfosalts applicable to temperatures above 119°C is developed to calculate phase relations for polybasite-pearceite- and fahlore-bearing assemblages. It is based on pre-existing and new constraints on activity-composition, Ag-Cu and As-Sb partitioning, and other relations, and on experiments (200-300°C, evacuated silica tubes) conducted to define the stability of the polybasite-pearceite [(Ag 1- x,Cu x) 16(Sb 1- y,As y) 2S 11] + ZnS sphalerite assemblage with respect to assemblages containing (Ag,Cu) 2S sulfides coexisting with (Cu, Ag) 10Zn 2(Sb,As) 4S 13 fahlore sulfosalts. It was found that the thermodynamics of mixing of bcc- and hcp-(Ag,Cu) 2S solutions, which are fast-ion conductors, may be described by using site multiplicities of metals α Ag,Cu > 2 and temperature-dependent regular solution parameters. We obtained estimates for the Gibbs energies of formation for Ag 16Sb 2S 11 and Cu 16Sb 2S 11 polybasite endmembers from the simple sulfides (Ag 2S, Cu 2S, and Sb 2S 3) of -30.79 and -4.07 kJ/gfw at 200°C, and -32.04 and -0.59 kJ/gfw at 400°C, respectively, that are about one half kJ/gfw more positive and about 6 kJ/gfw more negative than those estimated by Harlov and Sack (1995b). The corresponding estimates for formation energies of Ag 10Zn 2Sb 4S 13 and Cu 10Zn 2Sb 4S 13 fahlores (-20.29 and -105.29 kJ/gfw at 200°C and -23.72 and -105.76 kJ/gfw at 400°C) are comparable to, and roughly 110 kJ/gfw more positive than, the corresponding estimates of Ebel and Sack (1994). We also determined that the Gibbs energies of the As-Sb exchange reactions: 1/4Ag 10Zn2Sb4S13+1/2Ag 16As2S11=1/2Ag 16Sb2S11+1/4Ag 10Zn2As4S13Sb-fahlorepearceitepolybasiteAs-fahlore and Ag3SbS3+1/2Ag 16As2S11=1/2Ag 16Sb2S11+Ag3AsS3pyrargyritepearceitepolybasiteproustite are, respectively, 8.75 and 0.40 kJ/gfw in the range 150-350°C, and these predictions are consistent with As-Sb partitioning relations

Syntheses and characterization of one-dimensional alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yohannan, Jinu P.; Vidyasagar, Kanamaluru, E-mail: kvsagar@iitm.ac.in

2015-01-15

Three new isostructural quaternary antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs) have been synthesized by using alkali metal thiosulfate flux and structurally characterized by X-ray diffraction. Their structures contain A{sup +} ions around the [Sb{sub 2}Sn{sub 3}S{sub 10}]{sup 2−} chains, which are built from SbS{sub 3} pyramids, SnS{sub 6} octahedra and SnS{sub 4} tetrahedra. Raman and Mössbauer spectroscopic measurements corroborate the oxidation states and coordination environments of Sb(III) and Sn(IV). All three compounds are wide band gap semiconductors. Potassium compound undergoes partial exchange with strontium, cadmium and lead ions. - Graphical abstract: Syntheses, crystal structure, spectroscopic andmore » partial ion-exchange studies of new one-dimensional alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs) are described. - Highlights: • Syntheses of new alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs). • Wide band gap semiconductors with one-dimensional structure. • Topotactic partial exchange of K{sup +} ions of K{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} with Sr{sup 2+}, Cd{sup 2+} and Pb{sup 2+} ions.« less

The Kongsberg silver deposits, Norway: Ag-Hg-Sb mineralization and constraints for the formation of the deposits

NASA Astrophysics Data System (ADS)

Kotková, Jana; Kullerud, Kåre; Šrein, Vladimír; Drábek, Milan; Škoda, Radek

2018-04-01

The Kongsberg silver district has been investigated by microscopy and electron microprobe analysis, focusing primarily on the Ag-Hg-Sb mineralization within the context of the updated mineral paragenesis. The earliest mineralization stage is represented by sulfides, including acanthite, and sulfosalts. Native silver formed initially through breakdown of early Ag-bearing phases and later through influx of additional Ag-bearing fluids and silver remobilization. The first two generations of native silver were separated in time by the formation of Ni-Co-Fe sulfarsenides and the monoarsenide niccolite along rims of silver crystals. The presence of As-free sulfosalts and the absence of di- and tri-arsenides suggest a lower arsenic/sulfur activity ratio for the Kongsberg deposits compared to other five-element deposits. Native silver shows binary Ag-Hg and Ag-Sb solid solutions, in contrast to the ternary Ag-Hg-Sb compositions typical for other deposits of similar type. Antimonial silver together with allargentum, dyscrasite, and pyrargyrite was documented exclusively from the northern area of the district. Elsewhere, the only Sb-bearing minerals are polybasite and tetrahedrite/freibergite. Hg-rich silver (up to 21 wt% Hg) has been documented only in the central-western area. Myrmekite of freibergite and chalcopyrite reflects exsolution from an original Ag-poor tetrahedrite upon cooling, while myrmekite of pyrite and silver, forming through breakdown of low-temperature phases (argentopyrite or lenaite) upon heating, characterizes the Kongsberg silver district. Based on the stabilities of minerals and mineral assemblages, the formation of the silver mineralization can be constrained to temperatures between 180 and 250 °C.

Intermetallic Compound Growth between Electroless Nickel/Electroless Palladium/Immersion Gold Surface Finish and Sn-3.5Ag or Sn-3.0Ag-0.5Cu Solder

NASA Astrophysics Data System (ADS)

Oda, Yukinori; Fukumuro, Naoki; Yae, Shinji

2018-04-01

Using an electroless nickel/electroless palladium/immersion gold (ENEPIG) surface finish with a thick palladium-phosphorus (Pd-P) layer of 1 μm, the intermetallic compound (IMC) growth between the ENEPIG surface finish and lead-free solders Sn-3.5Ag (SA) or Sn-3.0Ag-0.5Cu (SAC) after reflow soldering and during solid-state aging at 150°C was investigated. After reflow soldering, in the SA/ENEPIG and SAC/ENEPIG interfaces, thick PdSn4 layers of about 2 μm to 3 μm formed on the residual Pd-P layers ( 0.5 μm thick). On the SA/ENEPIG interface, Sn was detected on the upper side of the residual Pd-P layer. On the SAC/ENEPIG interface, no Sn was detected in the residual Pd-P layer, and Cu was detected in the interface between the Pd-P and PdSn4 layers. After 300 h of aging at 150°C, the residual Pd-P layers had diffused completely into the solders. In the SA/ENEPIG interface, an IMC layer consisting of Ni3Sn4 and Ni3SnP formed between the PdSn4 layer and the nickel-phosphorus (Ni-P) layer, and a (Pd,Ni)Sn4 layer formed on the lower side of the PdSn4 layer. On the SAC/ENEPIG interface, a much thinner (Pd,Ni)Sn4 layer was observed, and a (Cu,Ni)6Sn5 layer was observed between the PdSn4 and Ni-P layers. These results indicate that Ni diffusion from the Ni-P layer to the PdSn4 layer produced a thick (Pd,Ni)Sn4 layer in the SA solder case, but was prevented by formation of (Cu,Ni)6Sn5 in the SAC solder case. This causes the difference in solder joint reliability between SA/ENEPIG and SAC/ENEPIG interfaces in common, thin Pd-P layer cases.

Microstructure and Mechanical Properties of Stainless Steel/Brass Joints Brazed by Sn-Electroplated Ag Brazing Filler Metals

NASA Astrophysics Data System (ADS)

Wang, Xingxing; Peng, Jin; Cui, Datian

2018-05-01

To develop a high-Sn-content AgCuZnSn brazing filler metal, the BAg50CuZn was used as the base filler metal and a Sn layer was electroplated upon it. Then, the 304 stainless steel and the H62 brass were induction-brazed with the Sn-plated brazing filler metals. The microstructures of the joints were examined with an optical microscope, a scanning electron microscope and an x-ray diffractometer. The corresponding mechanical properties were obtained with a universal tensile testing machine. The results indicated that the induction brazed joints consisted of the Ag phase, the Cu phase and the CuZn phase. When the content of Sn in the Sn-plated Ag brazing filler metal was 6.0 or 7.2 wt.%, the Cu5Zn8, the Cu41Sn11 and the Ag3Sn phases appeared in the brazed joint. The tensile strength of the joints brazed with the Sn-plated filler metal was higher compared to the joints with the base filler metal. When the content of Sn was 6.0 wt.%, the highest tensile strength of the joint reached to 395 MPa. The joint fractures presented a brittle mode, mixed with a low amount of ductile fracture, when the content of Sn exceeded 6.0 wt.%.

Highly efficient and mild electrochemical mineralization of long-chain perfluorocarboxylic acids (C9-C10) by Ti/SnO2-Sb-Ce, Ti/SnO2-Sb/Ce-PbO2, and Ti/BDD electrodes.

PubMed

Lin, Hui; Niu, Junfeng; Xu, Jiale; Huang, Haiou; Li, Duo; Yue, Zhihan; Feng, Chenghong

2013-11-19

The electrochemical mineralization of environmentally persistent long-chain perfluorinated carboxylic acids (PFCAs), i.e., perfluorononanoic acid (C8F17COOH, PFNA) and perfluorodecanoic acid (C9F19COOH, PFDA) was investigated in aqueous solutions (0.25 mmol L(-1)) over Ti/SnO2-Sb-Ce (SnO2), Ti/SnO2-Sb/Ce-PbO2 (PbO2), and Ti/BDD (BDD) anodes under galvanostatic control at room temperature. Based on PFCA decay rate, total organic carbon (TOC) reduction, defluorination ratio, safety, and energy consumption, the performance of PbO2 electrode was comparable with that of BDD electrode. After 180 min electrolysis, the PFNA removals on BDD and PbO2 electrodes were 98.7 ± 0.4% and 97.1 ± 1.0%, respectively, while the corresponding PFDA removals were 96.0 ± 1.4% and 92.2 ± 1.9%. SnO2 electrode yielded lower PFCA removals and led to notable secondary pollution by Sb ions. The primary mineralization product, F(-), as well as trace amounts of intermediate PFCAs with shortened chain lengths, were detected in aqueous solution after electrolysis. On the basis of these results, a degradation mechanism including three potential routes is proposed: via formation of short-chain PFCAs by stepwise removal of CF2; direct mineralization to CO2 and HF; conversion to volatile fluorinated organic compounds. The results presented here demonstrate that electrochemical technique exhibits high efficiency in mineralizing PFNA and PFDA under mild conditions, and is promising for the treatment of long-chain PFCAs in wastewater.

Genetic Pd, Pt, Au, Ag, and Rh mineralogy in Noril'sk sulfide ores

NASA Astrophysics Data System (ADS)

Spiridonov, E. M.; Kulagov, E. A.; Serova, A. A.; Kulikova, I. M.; Korotaeva, N. N.; Sereda, E. V.; Tushentsova, I. N.; Belyakov, S. N.; Zhukov, N. N.

2015-09-01

The undeformed ore-bearing intrusions of the Noril'sk ore field (NOF) cut through volcanic rocks of the Late Permian-Early Triassic trap association folded in brachysynclines. Due to the nonuniform load on the roof of intrusive bodies, most sulfide melts were squeezed, up to the tops of ore-bearing intrusions; readily fusible Ni-Fe-Cu sulfide melts were almost completely squeezed. In our opinion, not only one but two stages of mineralization developed at the Noril'sk deposits: (i) syntrap magmatic and (ii) epigenetic post-trap metamorphic-hydrothermal. All platinum-group minerals (PGM) and minerals of gold are metasomatic in the Noril'sk ores. They replaced sulfide solid solutions and exsolution structures. All types of PGM and Au minerals occur in the ores, varying in composition from pyrrhotite to chalcopyrite, talnakhite, mooihoekite, and rich in galena; they are localized in the inner and outer contact zones and differ only in the quantitative proportions of ore minerals. The aureoles of PGM and Au-Ag minerals are wider than the contours of sulfide bodies and coincide with halos of fluid impact on orebodies and adjacent host rocks. The pneumatolytic PGM and Au-Ag minerals are correlated in abundance with the dimensions of sulfide bodies. Their amounts are maximal in veins of late fusible ore composed of eutectic PbS ss and iss intergrowths, as well as at their contacts. The Pd and Pt contents in eutectic sulfide ores of NOF are the world's highest. In the process of noble-metal mineral formation, the fluids supply Pd, Pt, Au, As, Sb, Sn, Bi, and a part of Te, whereas Fe, Ni, Cu, Pb, Ag, Rh, a part of Te and Pd are leached from the replaced sulfide minerals. The pneumatolytic PGM of the early stage comprises Pd and Pt intermetallic compounds enriched in Au along with Pd-Pt-Fe-Ni-Cu-Sn-Pb(As) and (Pd,Pt,Au)(Sn,Sb,Bi,Te,As) solid solutions. Pneumatolytic PGM and Au minerals of the middle stage are products of solid-phase transformation and recrystallization of

Effects of Ge replacement in GeTe by Ag or Sb on the Seebeck coefficient and carrier concentration modified by local electron imbalance

NASA Astrophysics Data System (ADS)

Levin, E. M.; Howard, A.; Straszheim, W. E.

2015-03-01

XRD, SEM, EDS, 125Te NMR, Seebeck coefficient, and electrical resistivity of AgxGe50-xTe50 and SbxGe50-xTe50 alloys have been studied. Replacement of Ge in GeTe by Sb significantly increases the Seebeck coefficient, while replacement by Ag decreases it. These effects can be attributed to a change in carrier concentration observed via 125Te NMR spin-lattice relaxation measurements and NMR signal position, which mostly depends on the Knight shift. Variation in carrier concentration in AgxGe50-xTe50 and SbxGe50-xTe50 can be attributed to different electron configurations of valence electrons of Ag (4d105s1) and Sb (5s25p3) compared to that of Ge (4s24p2) resulting in local electron imbalances and changing the concentration of charge carrier (holes) generated by Ge vacancies. In contrast, our 125Te NMR and Seebeck coefficient data for Ag2Sb2Ge46Te50 are similar to those observed for GeTe. This shows that effects from Ag and Sb compensate each other and indicates the existence of [Ag +Sb] pairs. The effects of Ge replacement in GeTe by Ag, Sb, or [Ag +Sb] on rhombohedral lattice distortion also have been analyzed. Interplay between the Seebeck coefficient and electrical resistivity in these alloys results in variation of power factor; the value of 45 mW/cm K2, the highest among known tellurides, was found for Sb2Ge48Te50.

Electrical Transport Properties of Single-Crystalline β-Zn4Sb3 Prepared Through the Zn-Sn Mixed-Flux Method

NASA Astrophysics Data System (ADS)

Liu, Hongxia; Deng, Shuping; Shen, Lanxian; Wang, Jinsong; Feng, Cheng; Deng, Shukang

2017-03-01

β-Zn4Sb3 is a promising p-type thermoelectric material for utilization in moderate temperatures. This study prepares a group of single-crystalline β-Zn4Sb3 samples using the Zn-Sn mixed-flux method based on the stoichiometric ratios of Zn4+ x Sb3Sn y . The effect of Zn-to-Sn proportion in the flux on the structure and electrical transport properties is investigated. All samples are strip-shaped single crystals of different sizes. The actual Zn content of the present samples is improved (>3.9) compared with that of the samples prepared through the Sn flux method. Larger lattice parameters are also obtained. The carrier concentration of all the samples is in the order of over 1019 cm-3. With increasing Sn rate in the flux, this carrier concentration decreases, whereas mobility is significantly enhanced. The electrical conductivity and Seebeck coefficients of all the samples exhibit a behavior that of a degenerate semiconductor transport. Electrical conductivity initially increases and then decreases as the Sn ratio in the flux increases. The electrical conductivity of the x: y = 5:1 sample reaches 6.45 × 104 S m-1 at 300 K. Benefitting from the electrical conductivity and Seebeck coefficient, the flux proportion of the x: y = 7:1 sample finally achieves the highest power factor value of 1.4 × 10-3 W m-1 K-2 at 598 K.

Evaluation of the amalgamation reaction of experimental Ag-Sn-Cu alloys containing Pd using a mercury plating technique.

PubMed

Koike, Marie; Ferracane, Jack L; Fujii, Hiroyuki; Okabe, Toru

2003-09-01

A mercury plating technique was used to determine the phases forming on experimental Ag-Sn-Cu alloy powders (with and without Pd) exposed to electrolytically deposited mercury. Four series of alloy powders were made: a) 1.5% Pd with 10-14% Cu (CU series); b) 1.0% Pd with 10-14% Cu (1PD series); c) 1.5% Pd with different ratios of Ag3Sn (gamma) to Ag4Sn (beta) with 12% Cu (AGSN series); and d) 9-13% Cu with no Pd (NOPD series). Each powder was pressed on a freshly prepared amalgam specimen made from the same powder and metallographically polished until cross sections appeared; mercury was electroplated on the alloy particles. Alloy powders, amalgams and electroplated specimens were examined using XRD and SEM/EDS. XRD confirmed the presence of gamma2 in amalgams made from alloys with Cu < 13% or with Ag3Sn/Ag4Sn > 0.8. Specimens with moderately plated Hg showed gamma1 (Ag2Hg3) polyhedra and eta' Cu6Sn5, but not gamma2. This method effectively identifies alloys prone to forming gamma2.

Properties of ternary Sn-Ag-Bi solder alloys. Part 2: Wettability and mechanical properties analyses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vianco, P.T.; Rejent, J.A.

1999-10-01

Bismuth additions of 1% to 10% were made to the 96.5Sn-3.5Ag (wt.%) alloy in a study to develop a Sn-Ag-Bi ternary composition. Thermal properties and microstructural analyses of selected alloy compositions were reported in Part 1. Wettability and mechanical properties are described in this paper. Contact angle measurements demonstrated that Bi additions improved wetting/spreading performance on Cu; a minimum contact angle of 31 {+-} 4{degree} was observed with 4.83 wt.% Bi addition. Increasing the Bi content of the ternary alloy raised the Cu/solder/Cu solder joint shear strength to 81 MPa as determined by the ring-and-plug tests. TEM analysis of themore » 91.84Sn-3.33Ag-4.83Bi composition presented in Part 1 indicated that the strength improvement was attributed to solid-solution and precipitation strengthening effects by the Bi addition residing in the Sn-rich phase. Microhardness measurements of the Sn-Ag-Bi alloy, as a function of Bi content, reached maximum values of 30 (Knoop, 50 g) and 110 (Knoop, 5g) for Bi contents greater than approximately 4--5 wt.%.« less

Microstructure and Sn crystal orientation evolution in Sn-3.5Ag lead-free solders in high temperature packaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Bite; Muralidharan, Govindarajan; Kurumaddali, Nalini Kanth

2014-01-01

Understanding the reliability of eutectic Sn-3.5Ag lead-free solders in high temperature packaging applications is of significant interest in power electronics for the next generation electric grid. Large area (2.5mm 2.5mm) Sn-3.5Ag solder joints between silicon dies and direct bonded copper substrates were thermally cycled between 5 C and 200 C. Sn crystal orientation and microstructure evolution during thermal cycling were characterized by electron backscatter diffraction (EBSD) in scanning electron microscope (SEM). Comparisons are made between observed initial texture and microstructure and its evolution during thermal cycling. Gradual lattice rotation and grain boundary misorientation evolution suggested the continuous recrystallization mechanism. Recrystallizationmore » behavior was correlated with dislocation slip activities.« less

Properties of Sn3.8Ag0.7Cu Solder Alloy with Trace Rare Earth Element Y Additions

NASA Astrophysics Data System (ADS)

Hao, H.; Tian, J.; Shi, Y. W.; Lei, Y. P.; Xia, Z. D.

2007-07-01

In the current research, trace rare earth (RE) element Y was incorporated into a promising lead-free solder, Sn3.8Ag0.7Cu, in an effort to improve the comprehensive properties of Sn3.8Ag0.7Cu solder. The range of Y content in Sn3.8Ag0.7Cu solder alloys varied from 0 wt.% to 1.0 wt.%. As an illustration of the advantage of Y doping, the melting temperature, wettability, mechanical properties, and microstructures of Sn3.8Ag0.7CuY solder were studied. Trace Y additions had little influence on the melting behavior, but the solder showed better wettability and mechanical properties, as well as finer microstructures, than found in Y-free Sn3.8Ag0.7Cu solder. The Sn3.8Ag0.7Cu0.15Y solder alloy exhibited the best comprehensive properties compared to other solders with different Y content. Furthermore, interfacial and microstructural studies were conducted on Sn3.8Ag0.7Cu0.15Y solder alloys, and notable changes in microstructure were found compared to the Y-free alloy. The thickness of an intermetallic compound layer (IML) was decreased during soldering, and the growth of the IML was suppressed during aging. At the same time, the growth of intermetallic compounds (IMCs) inside the solder was reduced. In particular, some bigger IMC plates were replaced by fine, granular IMCs.

Formation of medical radioisotopes 111In, 117 m Sn, 124Sb, and 177Lu in photonuclear reactions

NASA Astrophysics Data System (ADS)

Danagulyan, A. S.; Hovhannisyan, G. H.; Bakhshiyan, T. M.; Avagyan, R. H.; Avetisyan, A. E.; Kerobyan, I. A.; Dallakyan, R. K.

2015-06-01

The possibility of the photonuclear production of radioisotopes 111In, 117 m Sn, 124Sb, and 177Lu is discussed. Reaction yields were measured by the gamma-activation method. The enriched tin isotopes 112, 118Sn and Te and HfO2 of natural isotopic composition were used as targets. The targets were irradiated at the linear electron accelerator of Alikhanian National Science Laboratory (Yerevan) at the energy of 40 MeV. The experimental results obtained in this way reveal that the yield and purity of radioisotopes 111In and 117 mSn are acceptable for their production via photonuclear reactions. Reactions proceeding on targets from Te and HfO2 of natural isotopic composition and leading to the formation of 124Sb and 177Lu have small yields and are hardly appropriate for the photoproduction of these radioisotopes even in the case of enriched targets.

AsSb energetics in argentian sulfosalts

NASA Astrophysics Data System (ADS)

Ghosal, Subhabrata; Sack, Richard O.

1995-09-01

Experimental brackets on As-Sb partitioning between polybasite-pearceite {Pbp; (Cu, Ag) 16(Sb, As) 2S 11} and pyrargyrite-proustite {Ppr; (Cu, Ag) 3(Sb, As)S 3}, and between pyrargyrite-proustite, and miargyrite and smithite {αMi, βMi, Smt; Ag(Sb, As)S 2} (350-400°C; evacuated silica tubes) define standard state Gibbs energies of theAsSb exchange reactions {Ag 16As 2S 11+Ag 3SbS 3=Ag 16Sb 2S 11 + Ag 3AsS 3, Δ Gro Pbp-Ppr = 0.65 ± 0.60 kJ/gfw; Ag 3AsS 3, + AgSbS 2 = Ag 3SbS 3 + AgASS 2, Δ overlineGro Ppr-α Mi = 3.10 ± 0.50 kJ/gfw, Δ Gro PPr-Smt = 1.70 ± 0.50 kJ/gfw and the nonidealities associated with the AsSb substitutions in these minerals (measured by symmetric regular-solution parameters for formula units on a one AsSb site basis; WAsSbPbp = 4.00 ± 0.25 kJ/gfw; WAsSbPpr =6.00 ± 0 .60 kJ/gfw; WAsSbαMi = WAsSbSmt = 7.00 ± 0.50 kJ/gfw). The above constraints applied to the miscibility gap between Ag (Sb, As) S 2 solutions with α-miargyrite and smithite structures at 350°C determine the relative stabilities of these structures in the As and Sb endmembers to be: ( GSbo, α Mi - GSbo, Smt) ˜ -0.63 kJ/gfw; ( GAso, α Mi - GAsSmt) ˜ 0.77 kJ/gfw. Combining these constraints with the calorimetric data of Bryndzia and Kleppa (1988, 1989) and our melting point determinations we have constructed a phase diagram for the AgSbS 2AgAsS 2 subsystem. The salient features of this diagram are (1) eutectic behaviour ( T ˜ 396°C, XAs ˜ 0.50), (2) modest increase in the temperature of the α → β miargyrite transition with As substitution (˜380°C in Sb-subsystem; 386.6°C at XAsMi ˜ 0.36), (3) a 42.5°C depression of the trechmannite-smithite transition with preferential incorporation of Sb in smithite { smithite ( XAs ˜ 0.62) → α-miargyrite ( XAs ˜ 0.34) + trechmannite (X As ˜ 1.00) at ˜277.5°C}, and (4) widening of the miargyrite-trechmannite gap at lower temperatures. The latter feature is consistent with the inference that the most As

Photorefractive splicing device with double phase conjugate mirror using Sn2P2S6:Sb crystal

NASA Astrophysics Data System (ADS)

Wakayama, Yuta; Okamoto, Atsushi; Shimayabu, Kohei; Kojima, Yasunori; Grabar, Alexander A.

2009-02-01

We develop a splicing device for photonic crystal fibers (PCFs) based on a double phase conjugate mirror (DPCM) using a novel photorefractive (PR) Sn2P2S6:Sb 1.5% crystal. This PR splicer has many attractive characteristics including modal field compensation and the automatic reconfiguration of the optical path. Utilizing a DPCM as the splicer, our device can adapt to misalignments automatically since the incident beams continuously rewrite an index grating which formed in the crystal. By the implementation of the Sn2P2S6:Sb crystal, the response time for the characteristic of dynamic reconfiguration is improved several-hundred-fold compared with conventional materials, e.g. BaTiO3. We demonstrate that the high angular tolerance is provided using the DPCM with the Sn2P2S6:Sb crystal. When the misalignment of the incident angle is from -7° to 8°, the increment of coupling loss is less than 0.6dB. This is several-ten-fold compared with the fusion splicing. We reveal the dependence of the coupling loss on the position of the incident beams and also the dependence of the energy flow on the propagation distance for the first time with the two-dimensional finite-difference beampropagation method. Using our numerical simulation tool, we can visually investigate the beam propagation property considering the influence of the fanning effect in the Sn2P2S6 crystals.

Enhancing visible light photocatalytic activity of direct Z-scheme SnS{sub 2}/Ag{sub 3}PO{sub 4} heterojunction photocatalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Jin, E-mail: lj328520504@126.com; Zhou, Xiaosong; Ma, Lin

Highlights: • Novel direct Z-scheme SnS{sub 2}/Ag{sub 3}PO{sub 4} heterojunction photocatalysts are synthesized. • SnS{sub 2}/Ag{sub 3}PO{sub 4} exhibits much higher photocatalytic activity than pure SnS{sub 2} and Ag{sub 3}PO{sub 4}. • A possible photocatalytic mechanism was discussed in detail. - Abstract: Novel direct Z-scheme SnS{sub 2}/Ag{sub 3}PO{sub 4} heterojunction photocatalysts were successfully fabricated with SnS{sub 2} nanoplates hybridized by Ag{sub 3}PO{sub 4} nanoparticals via a facile hydrothermal and precipitation method and applied for the photocatalytic degradation of methyl orange in aqueous solution under visible light irradiation (λ > 420 nm). It was found that the photocatalytic performance of themore » SnS{sub 2} (2.0 wt%)/Ag{sub 3}PO{sub 4} heterojunction photocatalyst with 2.0 wt% SnS{sub 2} content was much higher than that of individual SnS{sub 2} and Ag{sub 3}PO{sub 4}. The enhanced photocatalytic activity could be ascribed to the efficient separation of photogenerated electrons and holes through the formation of direct Z-scheme system composed of SnS{sub 2} and Ag{sub 3}PO{sub 4}. Furthermore, the recycling experiments revealed that the photocorrosion behavior of Ag{sub 3}PO{sub 4} was strongly inhibited by SnS{sub 2}, it may be due to the photogenerated electrons of Ag{sub 3}PO{sub 4} would be quickly combined with the photogenerated holes of SnS{sub 2}. This work will be useful for the design of other direct Z-scheme visible-light-driven photocatalytic systems for application in energy conversion and environmental remediation.« less

Electrochemical Degradation of Rhodamine B over Ti/SnO2-Sb Electrode.

PubMed

Maharana, Dusmant; Niu, Junfeng; Gao, Ding; Xu, Zesheng; Shi, Jianghong

2015-04-01

Electrochemical degradation of rhodamine B (C28H31ClN2O3) over Ti/SnO2-Sb anode was investigated in a rectangular cell. The degradation reaction follows pseudo-first-order kinetics. The degradation efficiency of rhodamine B attained >90.0% after 20 minutes of electrolysis at initial concentrations of 5 to 200 mg/L at a constant current density of 20 mA/cm2 with a 10 mmol/L Na2SO4 supporting electrolyte solution. Rhodamine B (50 mg/L) degradation and total organic carbon (TOC) removal ratio achieved 99.9 and 86.7%, respectively, at the optimal conditions after 30 minutes of electrolysis. The results showed that the energy efficiency of rhodamine B (50 mg/L) degradation at the optimal current densities from 2 to 30 mA/cm2 were 23.2 to 84.6 Wh/L, whereas the electrolysis time for 90% degradation of rhodamine B with Ti/SnO2-Sb anode was 36.6 and 7.3 minutes, respectively. The electrochemical method can be an advisable option for the treatment of dyes such as rhodamine B in wastewater.

A Study on the Physical Properties and Interfacial Reactions with Cu Substrate of Rapidly Solidified Sn-3.5Ag Lead-Free Solder

NASA Astrophysics Data System (ADS)

Ma, Hai-Tao; Wang, Jie; Qu, Lin; Zhao, Ning; Kunwar, A.

2013-08-01

A rapidly solidified Sn-3.5Ag eutectic alloy produced by the melt-spinning technique was used as a sample in this research to investigate the microstructure, thermal properties, solder wettability, and inhibitory effect of Ag3Sn on Cu6Sn5 intermetallic compound (IMC). In addition, an as-cast Sn-3.5Ag solder was prepared as a reference. Rapidly solidified and as-cast Sn-3.5Ag alloys of the same size were soldered at 250°C for 1 s to observe their instant melting characteristics and for 3 s with different cooling methods to study the inhibitory effect of Ag3Sn on Cu6Sn5 IMC. Experimental techniques such as scanning electron microscopy, differential scanning calorimetry, and energy-dispersive spectrometry were used to observe and analyze the results of the study. It was found that rapidly solidified Sn-3.5Ag solder has more uniform microstructure, better wettability, and higher melting rate as compared with the as-cast material; Ag3Sn nanoparticles that formed in the rapidly solidified Sn-3.5Ag solder inhibited the growth of Cu6Sn5 IMC during aging significantly much strongly than in the as-cast material because their number in the rapidly solidified Sn-3.5Ag solder was greater than in the as-cast material with the same soldering process before aging. Among the various alternative lead-free solders, this study focused on comparison between rapidly solidified and as-cast solder alloys, with the former being observed to have better properties.

Thermo-Mechanical Response of Monolithic and NiTi Shape Memory Alloy Fiber Reinforced Sn-3.8Ag-0.7Cu Solder

DTIC Science & Technology

2005-09-01

novel adaptive Tin-Silver-Copper ( SnAgCu ) solder reinforced with NiTi shape-memory alloy (particles or fiber) developed. An experimental...to meet the demands of miniaturization and enhanced performance in severe environments, a novel adaptive Tin-Silver-Copper ( SnAgCu ) solder...4. Crack region of SnAgCu solder after TMF, from reference [1] ............. 5 Figure 5. Phase diagram of 95.5Sn-3.8Ag-0.7Cu solder, from reference

AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banik, Ananya; Biswas, Kanishka, E-mail: kanishka@jncasr.ac.in

SnTe, a Pb-free analogue of PbTe, was earlier assumed to be a poor thermoelectric material due to excess p-type carrier concentration and large energy separation between light and heavy hole valence bands. Here, we report the enhancement of the thermoelectric performance of p-type SnTe by Ag and I co-doping. AgI (1–6 mol%) alloying in SnTe modulates its electronic structure by increasing the band gap of SnTe, which results in decrease in the energy separation between its light and heavy hole valence bands, thereby giving rise to valence band convergence. Additionally, iodine doping in the Te sublattice of SnTe decreases themore » excess p-type carrier concentration. Due to significant decrease in hole concentration and reduction of the energy separation between light and heavy hole valence bands, significant enhancement in Seebeck coefficient was achieved at the temperature range of 600–900 K for Sn{sub 1−x}Ag{sub x}Te{sub 1−x}I{sub x} samples. A maximum thermoelectric figure of merit, zT, of ~1.05 was achieved at 860 K in high quality crystalline ingot of p-type Sn{sub 0.95}Ag{sub 0.05}Te{sub 0.95}I{sub 0.05}. - Graphical abstract: Significant decrease in hole concentration and reduction of the energy separation between light and heavy hole valence bands resulted in a maximum thermoelectric figure of merit, zT, of ~1.05 at 860 K in high quality crystalline ingot of p-type Sn{sub 0.95}Ag{sub 0.05}Te{sub 0.95}I{sub 0.05}. - Highlights: • AgI alloying in SnTe increases the principle band gap. • Hole concentration reduction and valence band convergence enhances thermopower of SnTe-AgI. • A maximum zT of ~1.05 was achieved at 860 K in p-type Sn{sub 0.95}Ag{sub 0.05}Te{sub 0.95}I{sub 0.05}.« less

Synthesis and evaluation of optical and antimicrobial properties of Ag-SnO2 nanocomposites

NASA Astrophysics Data System (ADS)

Kumar Nair, Kishore; Kumar, Promod; Kumar, Vinod; Harris, R. A.; Kroon, R. E.; Viljoen, Bennie; Shumbula, P. M.; Mlambo, M.; Swart, H. C.

2018-04-01

We report on the sol-gel based room temperature synthesis of undoped SnO2 and Ag-SnO2 nanostructures. The synthesized nanostructures were characterized by Fourier transform infrared spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, High-resolution transmission electron microscopy (HR-TEM) and UV-visible spectroscopy. The XRD pattern confirmed that the obtained nanostructures have a tetragonally rutile structure. No extra phase changes were observed after Ag doping. UV-visible spectroscopy measurements indicated that the band gap of 3.59 eV for pure SnO2 nanostructures, decreased to 3.39 eV after doping. TEM analysis showed that no regular shape morphology existed and some rod-shaped particles were also detected in the nanostructures. The antibacterial activity of the nanostructures against E. coli was evaluated and a continuous decrease of microbial count was observed. The microbial population decreased from 6 × 105 cfu/ml to 7 × 104 cfu/ml and 5 × 104 cfu/ml on SnO2 and Ag-SnO2 treatments, respectively. Thus, the nanostructures can be used for the biorational management of E. coli for waste water treatment before discharge.

Nanoindentation on SnAgCu lead-free solder joints and analysis

NASA Astrophysics Data System (ADS)

Xu, Luhua; Pang, John H. L.

2006-12-01

The lead-free SnAgCu (SAC) solder joint on copper pad with organic solderability preservative (Cu-OSP) and electroless nickel and immersion gold (ENIG) subjected to thermal testing leads to intermetallic growth. It causes corresponding reliability concerns at the interface. Nanoindentation characterization on SnAgCu solder alloy, intermetallic compounds (IMCs), and the substrates subjected to thermal aging is reported. The modulus and hardness of thin IMC layers were measured by nanoindentation continuous stiffness measurement (CSM) from planar IMC surface. When SAC/Ni(Au) solder joints were subject to thermal aging, the Young’s modulus of the NiCuSn IMC at the SAC/ENIG specimen changed from 207 GPa to 146 GPa with different aging times up to 500 h. The hardness decreased from 10.0 GPa to 7.3 GPa. For the SAC/Cu-OSP reaction couple, the Young’s modulus of Cu6Sn5 stayed constant at 97.0 GPa and hardness about 5.7 GPa. Electron-probe microanalysis (EPMA) was used to thermal aging. The creep effect on the measured result was analyzed when measuring SnAgCu solder; it was found that the indentation penetration, and thus the hardness, is loading rate dependent. With the proposed constant P/P experiment, a constant indentation strain rate h/h and hardness could be achieved. The log-log plot of indentation strain rate versus hardness for the data from the constant P/P experiments yields a slope of 7.52. With the optimized test method and CSM Technique, the Modulus of SAC387 solder alloy and all the layers in a solder joint were investigated.

Significantly enhanced photocatalytic activity of visible light responsive AgBr/Bi2Sn2O7 heterostructured composites

NASA Astrophysics Data System (ADS)

Hu, Chaohao; Zhuang, Jing; Zhong, Liansheng; Zhong, Yan; Wang, Dianhui; Zhou, Huaiying

2017-12-01

Heterostructured AgBr/Bi2Sn2O7 photocatalysts were synthesized successfully via the ultrasonic-assisted chemical precipitation method. XRD, FT-IR, FE-SEM, TEM, XPS, UV-vis-DRS and PL spectroscopy were used to characterize the phase structure, morphology, chemical composition, oxidation state, and optical properties of AgBr/Bi2Sn2O7 heterojunction. The photocatalytic activity of as-prepared catalysts was evaluated by the degradation of RhB under visible light irradiation. The obtained AgBr/Bi2Sn2O7 composite with the 1:1 molar ratio exhibited significantly enhanced photocatalytic performance. Further first-principles calculations indicated that the hybridization interaction between Ag and O atoms at AgBr/Bi2Sn2O7 interface is expected to be beneficial for enhancing the charge transfer and improving the photocatalytic activity of heterostructured composites.

High temperature neutron powder diffraction study of the Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lemoine, Pierric, E-mail: pierric.lemoine@univ-rennes1.fr; Bourgès, Cédric; Barbier, Tristan

Ternary copper-containing sulfides Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} have attracted considerable interest since few years due to their high-efficiency conversion as absorbers for solar energy and promising thermoelectric materials. We report therein on the decomposition study of Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases using high temperature in situ neutron powder diffraction. Our results obtained at a heating rate of 2.5 K/min indicate that: (i) Cu{sub 12}Sb{sub 4}S{sub 13} decomposes above ≈792 K into Cu{sub 3}SbS{sub 3}, and (ii) Cu{sub 4}Sn{sub 7}S{sub 16} decomposes above ≈891 K into Sn{sub 2}S{sub 3} and amore » copper-rich sulfide phase of sphalerite ZnS-type structure with an assumed Cu{sub 3}SnS{sub 4} stoichiometry. Both phase decompositions are associated to a sulfur volatilization. While the results on Cu{sub 12}Sb{sub 4}S{sub 13} are in fair agreement with recent published data, the decomposition behavior of Cu{sub 4}Sn{sub 7}S{sub 16} differs from other studies in terms of decomposition temperature, thermal stability and products of reaction. Finally, the crystal structure refinements from neutron powder diffraction data are reported and discussed for the Cu{sub 4}Sn{sub 7}S{sub 16} and tetrahedrite Cu{sub 12}Sb{sub 4}S{sub 13} phases at 300 K, and for the high temperature form of skinnerite Cu{sub 3}SbS{sub 3} at 843 K. - Graphical abstract: In situ neutron powder diffraction data (heating rate of 2.5 K/min) indicates that (i) the ternary Cu{sub 12}Sb{sub 4}S{sub 13} phase is stable up to 792 K and decomposes at higher temperature into Cu{sub 3}SbS{sub 3} and Cu{sub 1.5}Sb{sub 0.5}S{sub 2}, and (ii) the Cu{sub 4}Sn{sub 7}S{sub 16} phase is stable up to 891 K and decomposes at higher temperature into Sn{sub 2}S{sub 3} and a cubic phase of sphalerite ZnS-type structure. Sulfur volatilization likely occurs in order to balance the overall stoichiometry.« less

Microstructure and Tensile Properties of Sn-1Ag-0.5Cu Solder Alloy Bearing Al for Electronics Applications

NASA Astrophysics Data System (ADS)

Shnawah, Dhafer Abdul-Ameer; Said, Suhana Binti Mohd; Sabri, Mohd Faizul Mohd; Badruddin, Irfan Anjum; Hoe, Teh Guan; Che, Fa Xing; Abood, Adnan Naama

2012-08-01

This work investigates the effects of 0.1 wt.% and 0.5 wt.% Al additions on bulk alloy microstructure and tensile properties as well as on the thermal behavior of Sn-1Ag-0.5Cu (SAC105) lead-free solder alloy. The addition of 0.1 wt.% Al reduces the amount of Ag3Sn intermetallic compound (IMC) particles and leads to the formation of larger ternary Sn-Ag-Al IMC particles. However, the addition of 0.5 wt.% Al suppresses the formation of Ag3Sn IMC particles and leads to a large amount of fine Al-Ag IMC particles. Moreover, both 0.1 wt.% and 0.5 wt.% Al additions suppress the formation of Cu6Sn5 IMC particles and lead to the formation of larger Al-Cu IMC particles. The 0.1 wt.% Al-added solder shows a microstructure with coarse β-Sn dendrites. However, the addition of 0.5 wt.% Al has a great effect on suppressing the undercooling and refinement of the β-Sn dendrites. In addition to coarse β-Sn dendrites, the formation of large Sn-Ag-Al and Al-Cu IMC particles significantly reduces the elastic modulus and yield strength for the SAC105 alloy containing 0.1 wt.% Al. On the other hand, the fine β-Sn dendrite and the second-phase dispersion strengthening mechanism through the formation of fine Al-Ag IMC particles significantly increases the elastic modulus and yield strength of the SAC105 alloy containing 0.5 wt.% Al. Moreover, both 0.1 wt.% and 0.5 wt.% Al additions worsen the elongation. However, the reduction in elongation is much stronger, and brittle fracture occurs instead of ductile fracture, with 0.5 wt.% Al addition. The two additions of Al increase both solidus and liquidus temperatures. With 0.5 wt.% Al addition the pasty range is significantly reduced and the differential scanning calorimetry (DSC) endotherm curve gradually shifts from a dual to a single endothermic peak.

Effect of Solder-Joint Geometry on the Low-Cycle Fatigue Behavior of Sn- xAg-0.7Cu

NASA Astrophysics Data System (ADS)

Lee, Hwa-Teng; Huang, Kuo-Chen

2016-12-01

Low-cycle fatigue tests of Sn-Ag-Cu (SAC) Pb-free solder joints under fixed displacement were performed to evaluate the influence of Ag content (0-3 wt.%) and solder-joint geometry (barrel and hourglass types) on solder-joint fatigue behavior and reliability. The solder joints were composed of fine particles of Ag3Sn and Cu6Sn5, which aggregated as an eutectic constituent at grain boundaries of the primary β-Sn phase and formed a dense network structure. A decrease in the Ag content resulted in coarsening of the β-Sn and eutectic phases, which, in turn, decreased the strength of the joint and caused earlier failure. Solder joints in the hourglass form exhibited better fatigue performance with longer life than barrel-type joints. The sharp contact angle formed between the solder and the Cu substrate by the barrel-type joints concentrated stress, which compromised fatigue reliability. The addition of Ag to the solder, however, enhanced fatigue performance because of strengthening caused by Ag3Sn formation. The cracks of the barrel-type SAC solder joints originated mostly at the contact corner and propagated along the interfacial layer between the interfacial intermetallic compound (IMC) and solder matrix. Hourglass-type solder joints, however, demonstrated both crack initiation and propagation in the solder matrix (solder mode). The addition of 1.5-2.0 wt.% Ag to SAC solder appears to enhance the fatigue performance of solder joints while maintaining sufficient strength.

Structural investigation of the substituted pyrochlore AgSbO3 through total scattering techniques.

PubMed

Laurita, Geneva; Page, Katharine; Sleight, A W; Subramanian, M A

2013-10-07

Polycrystalline samples of the pyrochlore series Ag(1-x)M(n)(x)SbO(3+x[(n-1)/2]) (M = Na, K, and Tl) have been structurally analyzed through total scattering techniques. The upper limits of x obtained were 0.05 for Na, 0.16 for K, and 0.17 for Tl. The Ag(+) cation occupies a site with inversion symmetry on a 3-fold axis. When the smaller Na(+) cation substitutes for Ag(+), it is displaced by about 0.6 Å perpendicular to the 3-fold axis to achieve some shorter Na-O bond distances. When the larger Tl(+) cation substitutes for Ag(+), it is displaced by about 1.14 Å along the 3-fold axis and achieves an environment typical of a lone pair cation. Some of the Tl(3+) from the precursor remains unreduced, leading to a formula of Ag(0.772(1))Tl(+)(0.13(2))Tl(3+)(0.036(1))SbO(3.036(1)). The position of the K(+) dopant was effectively modeled assuming that K(+) occupied the same site as Ag(+). The expansion of the lattice caused by substitution of the larger K(+) and Tl(+) cations results in longer Ag-O bond lengths, which would reduce the overlap of the Ag 4d and O 2p orbitals that compose the valence band maximum. Substitution of the smaller Na(+) results in a decrease in the Ag-O bond distance, thus increasing the overlap of the Ag 4d and O 2p orbitals. This will have a direct influence on the band composition and observed properties of this material of interest.

Mechanical Deformation Behavior of Sn-Ag-Cu Solders with Minor Addition of 0.05 wt.% Ni

NASA Astrophysics Data System (ADS)

Hammad, A. E.; El-Taher, A. M.

2014-11-01

The aim of the present work is to develop a comparative evaluation of the microstructural and mechanical deformation behavior of Sn-Ag-Cu (SAC) solders with the minor addition of 0.05 wt.% Ni. Test results showed that, by adding 0.05Ni element into SAC solders, generated mainly small rod-shaped (Cu,Ni)6Sn5 intermetallic compounds (IMCs) inside the β-Sn phase. Moreover, increasing the Ag content and adding Ni could result in the change of the shape and size of the IMC precipitate. Hence, a significant improvement is observed in the mechanical properties of SAC solders with increasing Ag content and Ni addition. On the other hand, the tensile results of Ni-doped SAC solders showed that both the yield stress and ultimate tensile strengths decrease with increasing temperature and with decreasing strain rate. This behavior was attributed to the competing effects of work hardening and dynamic recovery processes. The Sn-2.0Ag-0.5Cu-0.05Ni solder displayed the highest mechanical properties due to the formation of hard (Cu,Ni)6Sn5 IMCs. Based on the obtained stress exponents and activation energies, it is suggested that the dominant deformation mechanism in SAC (205)-, SAC (0505)- and SAC (0505)-0.05Ni solders is pipe diffusion, and lattice self-diffusion in SAC (205)-0.05Ni solder. In view of these results, the Sn-2.0Ag-0.5Cu-0.05Ni alloy is a more reliable solder alloy with improved properties compared with other solder alloys tested in the present work.

Thermoelectric Inhomogeneities in (Ag(sub 1-y)SbTe2)(sub x)(PbTe)(sub 1-x)

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey; Chen, Nancy; Gascoin, Franck; Mueller, Eckhard; Karpinski, Gabriele; Stiewe, Christian

2006-01-01

A document presents a study of why materials of composition (Ag1 ySbTe2)0.05 (PbTe)0.95 [0< or = y < or = 1] were previously reported to have values of the thermoelectric figure of merit [ZT (where Z = alpha(sup 2)/rk, alpha is the Seebeck coefficient, r is electrical resistivity, k is thermal conductivity, and T is absolute temperature)] ranging from <1 to >2. In the study, samples of (AgSbTe2)0.05(PbTe)0.95, (Ag0.67SbTe2)0.05 (PbTe)0.95, and (Ag0.55SbTe2)0.05(PbTe)0.95 were prepared by melting followed, variously, by slow or rapid cooling. Analyses of these samples by x-ray diffraction, electron microscopy, and scanning-microprobe measurements of the Seebeck coefficient led to the conclusion that these materials have a multiphase character on a scale of the order of millimeters, even though they appear homogeneous in x-ray diffraction and electron microscopy. The Seebeck measurements showed significant variations, including both n-type and p-type behavior in the same sample. These variations were found to be consistent with observed variations of ZT. The rapidly quenched samples were found to be less inhomogeneous than were the furnace-cooled ones; hence, rapid quenching was suggested as a basis of research on synthesizing more nearly uniform high-ZT samples.

One-Pot Green Synthesis of Ag-Decorated SnO2 Microsphere: an Efficient and Reusable Catalyst for Reduction of 4-Nitrophenol.

PubMed

Hu, Min; Zhang, Zhenwei; Luo, Chenkun; Qiao, Xiuqing

2017-12-01

In this paper, hierarchical Ag-decorated SnO 2 microspheres were synthesized by a facile one-pot hydrothermal method. The resulting composites were characterized by XRD, SEM, TEM, XPS, BET, and FTIR analysis. The catalytic performances of the samples were evaluated with the reduction of 4-nitrophenol to 4-aminophenol by potassium borohydride (KBH 4 ) as a model reaction. Time-dependent experiments indicated that the hierarchical microspheres assembled from SnO 2 and Ag nanoparticles can be formed when the react time is less than 10 h. With the increase of hydrothermal time, SnO 2 nanoparticles will self-assemble into SnO 2 nanosheets and Ag nanoparticles decorated SnO 2 nanosheets were obtained. When evaluated as catalyst, the obtained Ag-decorated SnO 2 microsphere prepared for 36 h exhibited excellent catalytic performance with normalized rate constant (κ nor ) of 6.20 min -1 g -1 L, which is much better than that of some previous reported catalysts. Moreover, this Ag-decorated SnO 2 microsphere demonstrates good reusability after the first five cycles. In addition, we speculate the formation mechanism of the hierarchical Ag-decorated SnO 2 microsphere and discussed the possible origin of the excellent catalytic activity.

Glass-like phonon scattering from a spontaneous nanostructure in AgSbTe2.

PubMed

Ma, J; Delaire, O; May, A F; Carlton, C E; McGuire, M A; VanBebber, L H; Abernathy, D L; Ehlers, G; Hong, Tao; Huq, A; Tian, Wei; Keppens, V M; Shao-Horn, Y; Sales, B C

2013-06-01

Materials with very low thermal conductivity are of great interest for both thermoelectric and optical phase-change applications. Synthetic nanostructuring is most promising for suppressing thermal conductivity through phonon scattering, but challenges remain in producing bulk samples. In crystalline AgSbTe2 we show that a spontaneously forming nanostructure leads to a suppression of thermal conductivity to a glass-like level. Our mapping of the phonon mean free paths provides a novel bottom-up microscopic account of thermal conductivity and also reveals intrinsic anisotropies associated with the nanostructure. Ground-state degeneracy in AgSbTe2 leads to the natural formation of nanoscale domains with different orderings on the cation sublattice, and correlated atomic displacements, which efficiently scatter phonons. This mechanism is general and suggests a new avenue for the nanoscale engineering of materials to achieve low thermal conductivities for efficient thermoelectric converters and phase-change memory devices.

Enhanced photodegradation activity of methyl orange over Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites under visible light irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Jin, E-mail: lj328520504@126.com; Zhou, Xiaosong; Ma, Lin

Highlights: • Novel visible-light-driven Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites are synthesized. • Ag{sub 2}CrO{sub 4}/SnS{sub 2} exhibits higher photocatalytic activity than pure Ag{sub 2}CrO{sub 4} and SnS{sub 2}. • Ag{sub 2}CrO{sub 4}/SnS{sub 2} exhibits excellent stability for the photodegradation of MO. • The possible photocatalytic mechanism was discussed in detail. - Abstract: Novel Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites were prepared by a simple chemical precipitation method and characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, UV–vis diffuse reflectance spectroscopy and photoluminescence spectroscopy. The visible light photocatalytic tests showed that the Ag{sub 2}CrO{sub 4}/SnS{sub 2} compositesmore » enhanced photocatalytic activities for the photodegradation of methyl orange (MO) under visible light irradiation (λ > 420 nm), and the optimum rate constant of Ag{sub 2}CrO{sub 4}/SnS{sub 2} at a weight content of 1.0% Ag{sub 2}CrO{sub 4} for the degradation of MO was 2.2 and 1.5 times larger than that of pure Ag{sub 2}CrO{sub 4} and SnS{sub 2}, respectively. The improved activity could be attributed to high separation efficiency of photogenerated electrons-hole pairs on the interface of Ag{sub 2}CrO{sub 4} and SnS{sub 2}, which arised from the synergistic effect between Ag{sub 2}CrO{sub 4} and SnS{sub 2}. Moreover, the possible photocatalytic mechanism with superoxide radical anions and holes species as the main reactive species in photocatalysis process was proposed on the basis of experimental results.« less

Fabrication of (Ba,K)Fe2As2 tapes by ex situ PIT process using Ag-Sn alloy single sheath

NASA Astrophysics Data System (ADS)

Togano, K.; Gao, Z.; Matsumoto, A.; Kikuchi, A.; Kumakura, H.

2017-01-01

Instead of ordinal pure Ag, Ag-based Sn binary alloys (up to 7.5 at%Sn) with higher mechanical strength are used for the sheath material of ex situ powder-in-tube (PIT)-processed (Ba,K)Fe2As2(Ba-122) tapes. We found that the use of the Ag-Sn alloy enhances the densification and texturing of the Ba-122 core, resulting in higher transport, J c. Moreover, the optimum heat treatment temperature for a high J c can be lowered by around 100 °C due to the higher packing density of the Ba-122 core prior to the final heat treatment. We also found that the smoothness of the interface between the sheath and Ba-122 core is significantly improved by using the Ag-Sn binary alloy sheaths. These results show that the Ag-Sn alloy is promising as a sheath material in PIT-processed Ba-122 superconducting wires.

A room temperature ethanol sensor made from p-type Sb-doped SnO2 nanowires.

PubMed

Wu, Jyh Ming

2010-06-11

A p-type ethanol sensor with a response time of approximately 8.3 s at room temperature was produced by SnO(2):Sb nanowires. The electrical properties of p-type SnO(2) nanowires are stable with a hole concentration of 1.544 x 10(17) cm(-3) and a field-effect mobility of 22 cm(2) V(-2) S(-1). X-ray photoelectron spectroscopy (XPS) and Hall measurement revealed that as-synthesized nanowires exhibit p-type behavior. A comprehensive investigation of the p-type sensing mechanism is reported.

Electrical Transport Properties of Liquid Sn-Sb Binary Alloys

NASA Astrophysics Data System (ADS)

Thakore, B. Y.; Suthar, P. H.; Khambholja, S. G.; Jani, A. R.

2010-06-01

The study of electrical transport properties viz. electrical resistivity, thermo electrical power and thermal conductivity of liquid Sn-Sb binary alloys have been made by our well recognized single parametric model potential. In the present work, screening functions due to Hartree, Taylor, Ichimaru et al.. Farid et al.. and Sarkar et al.. have been employed to incorporate the exchange and correlation effects. The liquid alloy is studied as a function of its composition at temperature 823 K according to the Faber-Ziman model. Further, thermoelectric power and thermal conductivity have been predicted. The values of electrical resistivity of binary alloys computed with Ichimaru et al. and Farid et al.. screening function are in good agreement with the experimental data.

Mechanistic Prediction of the Effect of Microstructural Coarsening on Creep Response of SnAgCu Solder Joints

NASA Astrophysics Data System (ADS)

Mukherjee, S.; Chauhan, P.; Osterman, M.; Dasgupta, A.; Pecht, M.

2016-07-01

Mechanistic microstructural models have been developed to capture the effect of isothermal aging on time dependent viscoplastic response of Sn3.0Ag0.5Cu (SAC305) solders. SnAgCu (SAC) solders undergo continuous microstructural coarsening during both storage and service because of their high homologous temperature. The microstructures of these low melting point alloys continuously evolve during service. This results in evolution of creep properties of the joint over time, thereby influencing the long term reliability of microelectronic packages. It is well documented that isothermal aging degrades the creep resistance of SAC solder. SAC305 alloy is aged for (24-1000) h at (25-100)°C (~0.6-0.8 × T melt). Cross-sectioning and image processing techniques were used to periodically quantify the effect of isothermal aging on phase coarsening and evolution. The parameters monitored during isothermal aging include size, area fraction, and inter-particle spacing of nanoscale Ag3Sn intermetallic compounds (IMCs) and the volume fraction of micronscale Cu6Sn5 IMCs, as well as the area fraction of pure tin dendrites. Effects of microstructural evolution on secondary creep constitutive response of SAC305 solder joints were then modeled using a mechanistic multiscale creep model. The mechanistic phenomena modeled include: (1) dispersion strengthening by coarsened nanoscale Ag3Sn IMCs in the eutectic phase; and (2) load sharing between pro-eutectic Sn dendrites and the surrounding coarsened eutectic Sn-Ag phase and microscale Cu6Sn5 IMCs. The coarse-grained polycrystalline Sn microstructure in SAC305 solder was not captured in the above model because isothermal aging does not cause any significant change in the initial grain size and orientation of SAC305 solder joints. The above mechanistic model can successfully capture the drop in creep resistance due to the influence of isothermal aging on SAC305 single crystals. Contribution of grain boundary sliding to the creep strain of

Undercooling Behavior and Intermetallic Compound Coalescence in Microscale Sn-3.0Ag-0.5Cu Solder Balls and Sn-3.0Ag-0.5Cu/Cu Joints

NASA Astrophysics Data System (ADS)

Zhou, M. B.; Ma, X.; Zhang, X. P.

2012-11-01

The microstructure of microscale solder interconnects and soldering defects have long been known to have a significant influence on the reliability of electronic packaging, and both are directly related to the solidification behavior of the undercooled solder. In this study, the undercooling behavior and solidification microstructural evolution of Sn-3.0Ag-0.5Cu solder balls with different diameters (0.76 mm, 0.50 mm, and 0.30 mm) and the joints formed by soldering these balls on Cu open pads of two diameters (0.48 mm and 0.32 mm) on a printed circuit board (PCB) substrate were characterized by differential scanning calorimetry (DSC) incorporated into the reflow process. Results show that the decrease in diameter of the solder balls leads to an obvious increase in the undercooling of the balls, while the undercooling of the solder joints shows a dependence on both the diameter of the solder balls and the diameter ratio of solder ball to Cu pad (i.e., D s/ D p), and the diameter of the solder balls has a stronger influence on the undercooling of the joints than the dimension of the Cu pad. Coarse primary intermetallic compound (IMC) solidification phases were formed in the smaller solder balls and joints. The bulk Ag3Sn IMC is the primary solidification phase in the as-reflowed solder balls. Due to the interfacial reaction and dissolution of Cu atoms into the solder matrix, the primary Ag3Sn phase can be suppressed and the bulk Cu6Sn5 IMC is the only primary solidification phase in the as-reflowed solder joints.

Thermoelectric Properties of Pulsed Electric Current Sintered Samples of AgPb m SbSe17 ( m = 16 or 17)

NASA Astrophysics Data System (ADS)

Wu, Chun-I.; Todorov, Ilyia; Kanatzidis, Mercouri G.; Timm, Edward; Case, Eldon D.; Schock, Harold; Hogan, Timothy P.

2012-06-01

Lead chalcogenide materials have drawn attention in recent years because of their outstanding thermoelectric properties. Bulk n-type materials of AgPb m SbTe2+ m have been reported to exhibit high figure of merit, ZT, as high as 1.7 at 700 K. Recent reports have shown p-type lead selenide-based compounds with comparable ZT. The analogous material AgPb m SbSe17 shares a similar cubic rock-salt structure with PbTe-based compounds; however, it exhibits a higher melting point, and selenium is more abundant than tellurium. Using solid solution chemistry, we have fabricated cast AgPb15SbSe17 samples that show a peak power factor of approximately 17 μW/cm K2 at 450 K. Increasing the strength of such materials is commonly achieved through powder processing, which also helps to homogenize the source materials. Pulsed electric current sintering (PECS) is a hot-pressing technique that utilizes electric current through the die and sample for direct Joule heating during pressing. The mechanisms present during PECS processing have captured significant research interest and have led to some notable improvements in sample properties compared with other densification techniques. We report the thermoelectric properties of PECS samples of AgPb m SbSe17 along with sample fabrication and processing details.

Thermodynamic Description of the Quaternary Ag-Bi-Cu-Sn System

NASA Astrophysics Data System (ADS)

Gierlotka, Wojciech

2018-01-01

Lead-free soldering is an important part of electronic devices production. New lead-free solders that replace classical Sn-37Pb solder are still under development. Thermodynamic modeling makes the development process faster, cheaper and more environmentally friendly due to predictions of phases stabilities and phases transformations. In this work, the thermodynamic description of quaternary Ag-Bi-Cu-Sn system is presented. The thermodynamic assessment of promising lead-free quaternary solder was prepared using the Calphad approach. A good agreement between available experimental data and calculation was found.

Effects of Ge and Sn substitution on the metal-semiconductor transition and thermoelectric properties of Cu12Sb4S13 tetrahedrite.

PubMed

Kosaka, Yasufumi; Suekuni, Koichiro; Hashikuni, Katsuaki; Bouyrie, Yohan; Ohta, Michihiro; Takabatake, Toshiro

2017-03-29

The synthetic tetrahedrites Cu 12-y Tr y Sb 4 S 13 (Tr: Mn, Fe, Co, Ni, Zn) have been extensively studied due to interest in metal-semiconductor transition as well as in superior thermoelectric performance. We have prepared Ge- and Sn-bearing tetrahedrites, Cu 12-x M x Sb 4 S 13 (M = Ge, Sn; x ≤ 0.6), and investigated the effects of the substitutions on the phase transition and the thermoelectric properties. The substitutions of Ge and Sn for Cu suppress the metal-semiconductor transition and increase the electrical resistivity ρ and the positive thermopower S. This finding suggests that the phase transition is prevented by electron doping into the unoccupied states of the valence band. The variations of ρ, S, and magnetic susceptibility for the present systems correspond well with those for the system with Tr = Zn 2+ , confirming the tetravalent states for Ge and Sn. The substitution of M 4+ for Cu 1+ decreases the power factor S 2 /ρ but enhances the dimensionless thermoelectric figure of merit ZT, due to reductions in both the charge carrier contribution and lattice contribution to the thermal conductivity. As a result, ZT has a maximum value of ∼0.65 at 665 K for x = 0.3-0.5 in Cu 12-x M x Sb 4 S 13 with M = Ge and Sn.

Local structure of amorphous Ag5In5Sb60Te30 and In3SbTe2 phase change materials revealed by X-ray photoelectron and Raman spectroscopic studies

NASA Astrophysics Data System (ADS)

Sahu, Smriti; Manivannan, Anbarasu; Shaik, Habibuddin; Mohan Rao, G.

2017-07-01

Reversible switching between highly resistive (binary "0") amorphous phase and low resistive (binary "1") crystalline phase of chalcogenide-based Phase Change Materials is accredited for the development of next generation high-speed, non-volatile, data storage applications. The doped Sb-Te based materials have shown enhanced electrical/optical properties, compared to Ge-Sb-Te family for high-speed memory devices. We report here the local atomic structure of as-deposited amorphous Ag5In5Sb60Te30 (AIST) and In3SbTe2 (IST) phase change materials using X-ray photoelectron and Raman spectroscopic studies. Although AIST and IST materials show identical crystallization behavior, they differ distinctly in their crystallization temperatures. Our experimental results demonstrate that the local environment of In remains identical in the amorphous phase of both AIST and IST material, irrespective of its atomic fraction. In bonds with Sb (˜44%) and Te (˜56%), thereby forming the primary matrix in IST with a very few Sb-Te bonds. Sb2Te constructs the base matrix for AIST (˜63%) along with few Sb-Sb bonds. Furthermore, an interesting assimilation of the role of small-scale dopants such as Ag and In in AIST, reveals rare bonds between themselves, while showing selective substitution in the vicinity of Sb and Te. This results in increased electronegativity difference, and consequently, the bond strength is recognized as the factor rendering stability in amorphous AIST.

Contrasting the Role of Mg and Ba Doping on the Microstructure and Thermoelectric Properties of p-Type AgSbSe2.

PubMed

Liu, Zihang; Shuai, Jing; Geng, Huiyuan; Mao, Jun; Feng, Yan; Zhao, Xu; Meng, Xianfu; He, Ran; Cai, Wei; Sui, Jiehe

2015-10-21

Microstructure has a critical influence on the mechanical and functional properties. For thermoelectric materials, deep understanding of the relationship of microstructure and thermoelectric properties will enable the rational optimization of the ZT value and efficiency. Herein, taking AgSbSe2 as an example, we first report a different role of alkaline-earth metal ions (Mg(2+) and Ba(2+)) doping in the microstructure and thermoelectric properties of p-type AgSbSe2. For Mg doping, it monotonously increases the carrier concentration and then reduces the electrical resistivity, leading to a substantially enhanced power factor in comparison to those of other dopant elements (Bi(3+), Pb(2+), Zn(2+), Na(+), and Cd(2+)) in the AgSbSe2 system. Meanwhile, the lattice thermal conductivity is gradually suppressed by point defects scattering. In contrast, the electrical resistivity first decreases and then slightly rises with the increased Ba-doping concentrations due to the presence of BaSe3 nanoprecipitates, exhibiting a different variation tendency compared with the corresponding Mg-doped samples. More significantly, the total thermal conductivity is obviously reduced with the increased Ba-doping concentrations partially because of the strong scattering of medium and long wavelength phonons via the nanoprecipitates, consistent with the theoretical calculation and analysis. Collectively, ZT value ∼1 at 673 K and calculated leg efficiency ∼8.5% with Tc = 300 K and Th = 673 K are obtained for both AgSb0.98Mg0.02Se2 and AgSb0.98Ba0.02Se2 samples.

The Melting Characteristics and Interfacial Reactions of Sn-ball/Sn-3.0Ag-0.5Cu-paste/Cu Joints During Reflow Soldering

NASA Astrophysics Data System (ADS)

Huang, J. Q.; Zhou, M. B.; Zhang, X. P.

2017-03-01

In this work, the melting characteristics and interfacial reactions of Sn-ball/Sn-3.0Ag-0.5Cu-paste/Cu (Sn/SAC305-paste/Cu) structure joints were studied using differential scanning calorimetry, in order to gain a deeper and broader understanding of the interfacial behavior and metallurgical combination among the substrate (under-bump metallization), solder ball and solder paste in a board-level ball grid array (BGA) assembly process, which is often seen as a mixed assembly using solder balls and solder pastes. Results show that at the SAC305 melting temperature of 217°C, neither the SAC305-paste nor the Sn-ball coalesce, while an interfacial reaction occurs between the SAC305-paste and Cu. A slight increase in reflow temperature (from 217°C to 218°C) results in the coalescence of the SAC305-paste with the Sn-ball. The Sn-ball exhibits premelting behavior at reflow temperatures below its melting temperature, and the premelting direction is from the bottom to the top of the Sn-ball. Remarkably, at 227°C, which is nearly 5°C lower than the melting point of pure Sn, the Sn-ball melts completely, resulting from two eutectic reactions, i.e., the reaction between Sn and Cu and that between Sn and Ag. Furthermore, a large amount of bulk Cu6Sn5 phase forms in the solder due to the quick dissolution of Cu substrate when the reflow temperature is increased to 245°C. In addition, the growth of the interfacial Cu6Sn5 layer at the SAC305-paste/Cu interface is controlled mainly by grain boundary diffusion, while the growth of the interfacial Cu3Sn layer is controlled mainly by bulk diffusion.

Second harmonic generation response of the cubic chalcogenides Ba( 6-x)Sr x[Ag( 4-y)Sn( y/4)](SnS 4) 4

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haynes, Alyssa S.; Liu, Te-Kun; Frazer, Laszlo

We synthesized the barium/strontium solid solution sequence Ba 6-xSr x[Ag( 4-y)Sn( y/4)](SnS 4) 4 for nonlinear optical (NLO) applications in the infrared (IR) via a flux synthesis route. All title compounds are isotypic, crystallizing in the cubic space group Imore » $$\\bar{_4}$$ 3d and are composed of a three-dimensional (3D) anionic framework of alternating corner-sharing SnS 4 and AgS 4 tetrahedra charge balanced by Ba and Sr. The shrinkage of Ba/Sr-S bond lengths causes the tetrahedra in the anionic framework to become more distorted, which results in a tunable band gap from 1.58 to 1.38 eV with increasing x values. The performance of the barium limit (x=0) is also superior to that of Sr (x=6), but surprisingly second harmonic generation (SHG) of the solid solution remains strong and is insensitive to the value of x over the range 0-3.8. Results show that the non-type-I phase-matched SHG produced by these cubic chalcogenides display intensities higher than the benchmark AgGaSe 2 from 600 to 1000 nm.« less

Crystallization kinetics and Avrami index of Sb-doped Se-Te-Sn chalcogenide glasses

NASA Astrophysics Data System (ADS)

Dwivedi, D. K.; Rao, Vandita; Mehta, N.; Chandel, N.

2018-05-01

Bulk amorphous samples of Sb-substituted Se78-xTe20Sn2Sbx (0 < x < 6) have been prepared using melt quench technique. The structure of Se78-xTe20Sn2Sbx (x = 0, 2, 4, 6) glassy alloys has been investigated using X-ray diffraction technique. Calorimetric studies of the prepared samples have been performed under non-isothermal conditions using differential scanning calorimetry (DSC) and glass transition temperature as well as crystallization temperature has been evaluated using DSC scans. The activation energy of crystallization kinetics (Ec) has been determined using model-free approaches such as Kissinger, Ozawa, Tang and Starink methods. The Avrami index (n) and frequency factor (Ko) have been calculated by Matusita and Augis-Benett method.

LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

NASA Astrophysics Data System (ADS)

Tang, Y. K.; Hsu, Y. C.; Lin, E. J.; Hu, Y. J.; Liu, C. Y.

2016-12-01

In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

Comparative Study of ENIG and ENEPIG as Surface Finishes for a Sn-Ag-Cu Solder Joint

NASA Astrophysics Data System (ADS)

Yoon, Jeong-Won; Noh, Bo-In; Jung, Seung-Boo

2011-09-01

Interfacial reactions and joint reliability of Sn-3.0Ag-0.5Cu solder with two different surface finishes, electroless nickel-immersion gold (ENIG) and electroless nickel-electroless palladium-immersion gold (ENEPIG), were evaluated during a reflow process. We first compared the interfacial reactions of the two solder joints and also successfully revealed a connection between the interfacial reaction behavior and mechanical reliability. The Sn-Ag-Cu/ENIG joint exhibited a higher intermetallic compound (IMC) growth rate and a higher consumption rate of the Ni(P) layer than the Sn-Ag-Cu/ENEPIG joint. The presence of the Pd layer in the ENEPIG suppressed the growth of the interfacial IMC layer and the consumption of the Ni(P) layer, resulting in the superior interfacial stability of the solder joint. The shear test results show that the ENIG joint fractured along the interface, exhibiting indications of brittle failure possibly due to the brittle IMC layer. In contrast, the failure of the ENEPIG joint only went through the bulk solder, supporting the idea that the interface is mechanically reliable. The results from this study confirm that the Sn-Ag-Cu/ENEPIG solder joint is mechanically robust and, thus, the combination is a viable option for a Pb-free package system.

Optoelectronic properties of candidate photovoltaic Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nhalil, Hariharan; Han, Dan; Du, Mao-Hua

High temperature synthesis and optical band gaps are reported for three candidate photovoltaic earth-abundant Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 semiconductors. The reported synthesis method is found to be more advantageous for KAg 2SbS 4 compared to the literature reported synthesis utilizing supercritical ammonia as a reaction medium, which produces a mixture of chalcogenide products. Based on optical diffuse reflectance data, Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 have band gaps in the 1.6–1.8 eV range, and are shown to be stable in ambient air for a period of 6 weeks, making themmore » attractive candidates for solar cell applications. Density functional theory (DFT) calculations indicate indirect band gaps for Cu 2PbSiS 4 and KAg 2SbS 4, and a nearly direct band gap for Ag 2PbGeS 4 with the calculated difference between indirect and direct gaps of only 30 meV. The p-type semiconducting behavior of Cu 2PbSiS 4, Ag 2PbGeS 4 is also verified by the transport measurments. The 3D connectivity of the polyanionic networks in these compounds results in dispersive valence and conduction bands, which is especially noticeable for KAg 2SbS 4. This fact is in part attributed to the presence of formally pentavalent SbV in this compound leading to empty Sb 5s orbitals in the conduction band. Finally, we discuss the potential of Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 for photovoltaic applications based on synthesis, stability, band gap and electronic structure considerations.« less

Optoelectronic properties of candidate photovoltaic Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 semiconductors

DOE PAGES

Nhalil, Hariharan; Han, Dan; Du, Mao-Hua; ...

2018-03-01

High temperature synthesis and optical band gaps are reported for three candidate photovoltaic earth-abundant Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 semiconductors. The reported synthesis method is found to be more advantageous for KAg 2SbS 4 compared to the literature reported synthesis utilizing supercritical ammonia as a reaction medium, which produces a mixture of chalcogenide products. Based on optical diffuse reflectance data, Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 have band gaps in the 1.6–1.8 eV range, and are shown to be stable in ambient air for a period of 6 weeks, making themmore » attractive candidates for solar cell applications. Density functional theory (DFT) calculations indicate indirect band gaps for Cu 2PbSiS 4 and KAg 2SbS 4, and a nearly direct band gap for Ag 2PbGeS 4 with the calculated difference between indirect and direct gaps of only 30 meV. The p-type semiconducting behavior of Cu 2PbSiS 4, Ag 2PbGeS 4 is also verified by the transport measurments. The 3D connectivity of the polyanionic networks in these compounds results in dispersive valence and conduction bands, which is especially noticeable for KAg 2SbS 4. This fact is in part attributed to the presence of formally pentavalent SbV in this compound leading to empty Sb 5s orbitals in the conduction band. Finally, we discuss the potential of Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 for photovoltaic applications based on synthesis, stability, band gap and electronic structure considerations.« less

The Structural Changes of the Sn(y)OX Thin Films Under Influence of Heat Treament

NASA Astrophysics Data System (ADS)

Vong, V.

2001-04-01

Composite oxide Sn(y) Ox made by thermal oxidation of the Sn(y)-bimetal thin films, in which y is the doped-materials as well as Sb, Ag or Pd. The Sn(y)-bimetal thin films have been made by evaporation in high vacuum onto NaCl-monocrystall and optical glass substrates. In the work the tin and the doped material (y) were put on two different boats and then both the boats were simultaniously heated to evaporate. The Sn(y)Ox thin films were annealed at the differential temperatures. The structural changes of its have been investigated by using X-ray diffraction and transmission electron microscope.

High Power Factor and Enhanced Thermoelectric Performance of SnTe-AgInTe2: Synergistic Effect of Resonance Level and Valence Band Convergence.

PubMed

Banik, Ananya; Shenoy, U Sandhya; Saha, Sujoy; Waghmare, Umesh V; Biswas, Kanishka

2016-10-05

Understanding the basis of electronic transport and developing ideas to improve thermoelectric power factor are essential for production of efficient thermoelectric materials. Here, we report a significantly large thermoelectric power factor of ∼31.4 μW/cm·K 2 at 856 K in Ag and In co-doped SnTe (i.e., SnAg x In x Te 1+2x ). This is the highest power factor so far reported for SnTe-based material, which arises from the synergistic effects of Ag and In on the electronic structure and the improved electrical transport properties of SnTe. In and Ag play different but complementary roles in modifying the valence band structure of SnTe. In-doping introduces resonance levels inside the valence bands, leading to a significant improvement in the Seebeck coefficient at room temperature. On the other hand, Ag-doping reduces the energy separation between light- and heavy-hole valence bands by widening the principal band gap, which also results in an improved Seebeck coefficient. Additionally, Ag-doping in SnTe enhances the p-type carrier mobility. Co-doping of In and Ag in SnTe yields synergistically enhanced Seebeck coefficient and power factor over a broad temperature range because of the synergy of the introduction of resonance states and convergence of valence bands, which have been confirmed by first-principles density functional theory-based electronic structure calculations. As a consequence, we have achieved an improved thermoelectric figure of merit, zT ≈ 1, in SnAg 0.025 In 0.025 Te 1.05 at 856 K.

Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer

PubMed Central

Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

2015-01-01

Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics. PMID:26672482

Creep Deformation of Lead-Free Sn-3.5Ag-Bi Solders

NASA Astrophysics Data System (ADS)

Shin, Seung Woo; Yu, Jin

2003-03-01

Creep rupture properties of lead-free Sn-3.5Ag-based alloys with varying amounts of Bi were investigated using dog-bone-shaped rolled and heat-treated bulk specimens. Nominal compositions of Bi additions were 0, 2.5, 4.8, 7.5, and 10 wt%, respectively. The minimum strain rates (\\dot{\\varepsilon}min) were lowest for the 2.5Bi specimens. The stress exponents (n) of \\dot{\\varepsilon}min were usually around 4± 0.6, with the exception of the 10Bi alloys, which showed n˜ 2. Additions of Bi reduced the creep ductility of Sn-3.5Ag-based ternary alloys, and fractographic analyses revealed typical creep rupture by the nucleation and growth of cavities on the grain boundaries except for the Bi-free alloy which had cavities in the grains. Subsequent AES analyses revealed that Bi segregation to grain boundaries facilitated the cavity nucleation, thereby increasing the propensity for the brittle creep rupture.

Influences of Silver and Zinc Contents in the Stannite Ag2ZnSnS4 Photoelectrodes on Their Photoelectrochemical Performances in the Salt-Water Solution.

PubMed

Cheng, Kong-Wei; Hong, Shu-Wei

2018-06-13

The multicomponent metal sulphide (stannite Ag2ZnSnS4) samples were grown onto the conductive metal oxide coated glass substrates by using the sulfurization of co-sputtering silver-zinc-tin precursors. Several [Ag]/[Zn+Sn] and [Zn]/[Sn] ratios were set in the metal precursors to investigate their influences on the crystal phases, microstructures and physical properties of the stannite Ag2ZnSnS4 samples. The results of the crystal phases and compositions of samples showed that the stannite Ag2ZnSnS4 phase can be obtained using the two-step sulfurization process, which maintained the silver-zinc-tin precursors at 160C for 1 hour and then kept them at 450oC for 30 minutes under sulfur/nitrogen atmosphere. N-type stannite Ag2ZnSnS4 samples with the carrier concentrations of 5.54x1012 - 9.11x1012 cm-3 can be obtained. High resistivities of Ag2ZnSnS4 samples were observed due to the low values of carrier concentration. Increasing the silver content in the sample can improve its PEC performance due to the decrease in the sample resistivity. The ratio of [Ag]/[Zn+Sn] kept at 0.8 and ratio of [Zn]/[Sn] set at 0.90 in the stannite Ag2ZnSnS4 sample had the highest photoelectrochemical performance of 0.31 mA.cm-2 with the potential set at 1.23 V vs. relative hydrogen electrode applied on the sample because of it having the lowest charge transfer resistance in electrolyte.

Nanodopant-Induced Band Modulation in AgPbmSbTe2+m-Type Nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yi; Ke, Xuezhi; Chen, Changfeng

2011-01-01

We elucidate the fundamental physics of nanoscale dopants in narrow band-gap thermoelectric nanocomposites XPbmYTe2+m (X=Ag,Na; Y=Sb,Bi) using first-principles calculations. Our re- sults unveil distinct band-structure modulations, most notably a sizable band-gap widening driven by nanodopant-induced lattice strain and a band split-off at the conduction band minimum caused by the spin-orbit interaction of the dopant Sb or Bi atoms. Boltzmann transport calculations demon- strate that these band modulations have significant but competing effects on high-temperature elec- tron transport behavior. These results offer insights for understanding recent experimental findings and suggest principles for optimizing thermoelectric properties of narrow band-gap semiconductors.

Effects of PCB Pad Metal Finishes on the Cu-Pillar/Sn-Ag Micro Bump Joint Reliability of Chip-on-Board (COB) Assembly

NASA Astrophysics Data System (ADS)

Kim, Youngsoon; Lee, Seyong; Shin, Ji-won; Paik, Kyung-Wook

2016-06-01

While solder bumps have been used as the bump structure to form the interconnection during the last few decades, the continuing scaling down of devices has led to a change in the bump structure to Cu-pillar/Sn-Ag micro-bumps. Cu-pillar/Sn-Ag micro-bump interconnections differ from conventional solder bump interconnections in terms of their assembly processing and reliability. A thermo-compression bonding method with pre-applied b-stage non-conductive films has been adopted to form solder joints between Cu pillar/Sn-Ag micro bumps and printed circuit board vehicles, using various pad metal finishes. As a result, various interfacial inter-metallic compounds (IMCs) reactions and stress concentrations occur at the Cu pillar/Sn-Ag micro bumps joints. Therefore, it is necessary to investigate the influence of pad metal finishes on the structural reliability of fine pitch Cu pillar/Sn-Ag micro bumps flip chip packaging. In this study, four different pad surface finishes (Thin Ni ENEPIG, OSP, ENEPIG, ENIG) were evaluated in terms of their interconnection reliability by thermal cycle (T/C) test up to 2000 cycles at temperatures ranging from -55°C to 125°C and high-temperature storage test up to 1000 h at 150°C. The contact resistances of the Cu pillar/Sn-Ag micro bump showed significant differences after the T/C reliability test in the following order: thin Ni ENEPIG > OSP > ENEPIG where the thin Ni ENEPIG pad metal finish provided the best Cu pillar/Sn-Ag micro bump interconnection in terms of bump joint reliability. Various IMCs formed between the bump joint areas can account for the main failure mechanism.

Formation of medical radioisotopes {sup 111}In, {sup 117m}Sn, {sup 124}Sb, and {sup 177}Lu in photonuclear reactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Danagulyan, A. S.; Hovhannisyan, G. H., E-mail: hov-gohar@ysu.am; Bakhshiyan, T. M.

2015-06-15

The possibility of the photonuclear production of radioisotopes {sup 111}In, {sup 117m}Sn, {sup 124}Sb, and {sup 177}Lu is discussed. Reaction yields were measured by the gamma-activation method. The enriched tin isotopes {sup 112,} {sup 118}Sn and Te and HfO{sub 2} of natural isotopic composition were used as targets. The targets were irradiated at the linear electron accelerator of Alikhanian National Science Laboratory (Yerevan) at the energy of 40 MeV. The experimental results obtained in this way reveal that the yield and purity of radioisotopes {sup 111}In and {sup 117}mSn are acceptable for their production via photonuclear reactions. Reactions proceeding onmore » targets from Te and HfO{sub 2} of natural isotopic composition and leading to the formation of {sup 124}Sb and {sup 177}Lu have small yields and are hardly appropriate for the photoproduction of these radioisotopes even in the case of enriched targets.« less

Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode

NASA Astrophysics Data System (ADS)

Song, Chunyan; Zhang, Nan; Lin, Jie; Guo, Xiaoyang; Liu, Xingyuan

2017-01-01

A novel UV transparent conducting films based on Sb2O3/Ag/Sb2O3 (SAS) structure, which were prepared by an electron-beam thermal evaporation at room temperature. This SAS exhibits excellent electrical, optical and stable properties. Especially for UV region, the SAS has high transmittance of 80% at 306 nm and 92% at 335 nm, meanwhile achieving low sheet resistance ( ≤ 10 Ω sq-1). The UV OLED based on the SAS show competitive device performance. The UV OLED obtains the peak of UV electroluminescence at 376 nm and shows a very high maximum EQE of 4.1% with the maximum output power density of 5.18 mW cm-2. These results indicate that the potential of SAS applications in deep UV transparent electrodes and large-scale flexible transparent electronics.

Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode.

PubMed

Song, Chunyan; Zhang, Nan; Lin, Jie; Guo, Xiaoyang; Liu, Xingyuan

2017-01-25

A novel UV transparent conducting films based on Sb 2 O 3 /Ag/Sb 2 O 3 (SAS) structure, which were prepared by an electron-beam thermal evaporation at room temperature. This SAS exhibits excellent electrical, optical and stable properties. Especially for UV region, the SAS has high transmittance of 80% at 306 nm and 92% at 335 nm, meanwhile achieving low sheet resistance ( ≤ 10 Ω sq -1 ). The UV OLED based on the SAS show competitive device performance. The UV OLED obtains the peak of UV electroluminescence at 376 nm and shows a very high maximum EQE of 4.1% with the maximum output power density of 5.18 mW cm -2 . These results indicate that the potential of SAS applications in deep UV transparent electrodes and large-scale flexible transparent electronics.

Thermodynamic Properties of Liquid Silver-Antimony-Tin Alloys Determined from Electrochemical and Calorimetric Measurements

NASA Astrophysics Data System (ADS)

Łapsa, Joanna; Onderka, Bogusław

2016-08-01

The thermodynamic properties of liquid Ag-Sb-Sn alloys were obtained through use of the drop solution calorimetric method and electromotive force (emf) measurements of galvanic cells with a yttria stabilized zirconia (YSZ) solid electrolyte. The experiments were carried out along Ag0.25Sb0.75, Ag0.5Sb0.5 and Ag0.75Sb0.25 sections of the ternary system in the temperature range from 973 K to 1223 K. From the measured emf, the tin activity in liquid solutions of Ag-Sb-Sn was determined for the first time. The partial and integral enthalpy of mixing were determined from calorimetric measurements at two temperatures. These measurements were performed along two cross-sections: Sb0.5Sn0.5 at 912 K and 1075 K, and Ag0.75Sb0.25 at 1075 K. Both experimental data sets were used to find ternary interaction parameters by applying the Redlich-Kister-Muggianu model of the substitutional solution. Consequently, the set of parameters describing the thermodynamic properties of the liquid phase was derived.

Effect of (Ag, Sn) Doping on the Structure and Optical Properties of Au Nanocluster

NASA Astrophysics Data System (ADS)

Balu, Radhakrishnan; Karna, Shashi

2014-03-01

Noble metal nanoclusters (NCs) consisting of a few to 35 atoms in size in the sub 2 nm range dimension are considered to be nontoxic as opposed to nanoparticles that are cytotoxic. Also, due to the quantum confinement of electrons, these NCs exhibit atom-like energy spectrum and display fluorescent properties useful in a wide range of applications, including medical diagnosis. The unique features of NCs such as size-tunable optical properties, intense fluorescence in the visible, and biocompatibility have stimulated an active area of investigation of noble metal NCs comprised of Au, Ag, Cu, and Pt. Furthermore, the electronic properties of nanoclusters can be modified by combining them with other elements. In this study, we consider the space-filled configuration of Au32 NC and investigate the effects of Ag and Sn atom incorporation on geometry and electronic spectrum. Our study suggests that Ag and Sn doping of Au32 NC red-shifts the absorption maximum and also reduces the oscillator strength.

X-ray fluorescence determination of Sn, Sb, Pb in lead-based bearing alloys using a solution technique

NASA Astrophysics Data System (ADS)

Tian, Lunfu; Wang, Lili; Gao, Wei; Weng, Xiaodong; Liu, Jianhui; Zou, Deshuang; Dai, Yichun; Huang, Shuke

2018-03-01

For the quantitative analysis of the principal elements in lead-antimony-tin alloys, directly X-ray fluorescence (XRF) method using solid metal disks introduces considerable errors due to the microstructure inhomogeneity. To solve this problem, an aqueous solution XRF method is proposed for determining major amounts of Sb, Sn, Pb in lead-based bearing alloys. The alloy samples were dissolved by a mixture of nitric acid and tartaric acid to eliminated the effects of microstructure of these alloys on the XRF analysis. Rh Compton scattering was used as internal standard for Sb and Sn, and Bi was added as internal standard for Pb, to correct for matrix effects, instrumental and operational variations. High-purity lead, antimony and tin were used to prepare synthetic standards. Using these standards, calibration curves were constructed for the three elements after optimizing the spectrometer parameters. The method has been successfully applied to the analysis of lead-based bearing alloys and is more rapid than classical titration methods normally used. The determination results are consistent with certified values or those obtained by titrations.

Real-time wetting dynamics and interfacial chemistry in low-melting 57Bi-42Sn-1Ag solder paste on Ni-Au

NASA Astrophysics Data System (ADS)

Bozack, M. J.

2004-11-01

We report the observation of real-time, in situ, wetting and spreading dynamics for 57Bi-42Sn-1Ag solder paste on Ni-Au surfaces during melting in a scanning electron microscope. The 57Bi-42Sn-1Ag is a low melting (139 °C) Pb-free eutectic alloy currently under consideration by automobile manufacturers for use in instrument displays. We find that, while there is excellent wetting of 57Bi-42Sn-1Ag solder paste on Ni-Au, there is almost no spreading. A large amount of Bi segregates to the surface of 57Bi-42Sn-1Ag solder balls during the sintering process. At melting, excessive flux outgassing and pooling are observed, several melted solder balls float on top of the flux, and substantial elemental segregation occurs during the first minutes of wetting. Neither Ni nor Au fully intermixes throughout the alloy at the interface within seconds of wetting. Bi does not move outward with the expanding alloy front. This combination of detrimental effects forms voids in the solder paste, contributes to low reliability of solder joints, and complicates the materials science at the solder-substrate interface as shown by Auger electron spectroscopy. Reliability work in progress (3000 cycles) shows that 57Bi-42Sn-1Ag on Ni-Au is less reliable than eutectic Sn-37Pb on Ni-Au for 2512 chip resistors cycled from -40 to 125 °C.

Microstructural Evolution and Mechanical Behavior of High Temperature Solders: Effects of High Temperature Aging

NASA Astrophysics Data System (ADS)

Hasnine, M.; Tolla, B.; Vahora, N.

2018-04-01

This paper explores the effects of aging on the mechanical behavior, microstructure evolution and IMC formation on different surface finishes of two high temperature solders, Sn-5 wt.% Ag and Sn-5 wt.% Sb. High temperature aging showed significant degradation of Sn-5 wt.% Ag solder hardness (34%) while aging has little effect on Sn-5 wt.% Sb solder. Sn-5 wt.% Ag experienced rapid grain growth as well as the coarsening of particles during aging. Sn-5 wt.% Sb showed a stable microstructure due to solid solution strengthening and the stable nature of SnSb precipitates. The increase of intermetallic compound (IMC) thickness during aging follows a parabolic relationship with time. Regression analysis (time exponent, n) indicated that IMC growth kinetics is controlled by a diffusion mechanism. The results have important implications in the selection of high temperature solders used in high temperature applications.

Soldering Characteristics and Mechanical Properties of Sn-1.0Ag-0.5Cu Solder with Minor Aluminum Addition

PubMed Central

Leong, Yee Mei; Haseeb, A.S.M.A.

2016-01-01

Driven by the trends towards miniaturization in lead free electronic products, researchers are putting immense efforts to improve the properties and reliabilities of Sn based solders. Recently, much interest has been shown on low silver (Ag) content solder SAC105 (Sn-1.0Ag-0.5Cu) because of economic reasons and improvement of impact resistance as compared to SAC305 (Sn-3.0Ag-0.5Cu. The present work investigates the effect of minor aluminum (Al) addition (0.1–0.5 wt.%) to SAC105 on the interfacial structure between solder and copper substrate during reflow. The addition of minor Al promoted formation of small, equiaxed Cu-Al particle, which are identified as Cu3Al2. Cu3Al2 resided at the near surface/edges of the solder and exhibited higher hardness and modulus. Results show that the minor addition of Al does not alter the morphology of the interfacial intermetallic compounds, but they substantially suppress the growth of the interfacial Cu6Sn5 intermetallic compound (IMC) after reflow. During isothermal aging, minor alloying Al has reduced the thickness of interfacial Cu6Sn5 IMC but has no significant effect on the thickness of Cu3Sn. It is suggested that of atoms of Al exert their influence by hindering the flow of reacting species at the interface. PMID:28773645

Creep Behavior of a Sn-Ag-Bi Pb-Free Solder

PubMed Central

Vianco, Paul; Rejent, Jerome; Grazier, Mark; Kilgo, Alice

2012-01-01

Compression creep tests were performed on the ternary 91.84Sn-3.33Ag-4.83Bi (wt.%, abbreviated Sn-Ag-Bi) Pb-free alloy. The test temperatures were: −25 °C, 25 °C, 75 °C, 125 °C, and 160 °C (± 0.5 °C). Four loads were used at the two lowest temperatures and five at the higher temperatures. The specimens were tested in the as-fabricated condition or after having been subjected to one of two air aging conditions: 24 hours at either 125 °C or 150 °C. The strain-time curves exhibited frequent occurrences of negative creep and small-scale fluctuations, particularly at the slower strain rates, that were indicative of dynamic recrystallization (DRX) activity. The source of tertiary creep behavior at faster strain rates was likely to also be DRX rather than a damage accumulation mechanism. Overall, the strain-time curves did not display a consistent trend that could be directly attributed to the aging condition. The sinh law equation satisfactorily represented the minimum strain rate as a function of stress and temperature so as to investigate the deformation rate kinetics: dε/dtmin = Asinhn (ασ) exp (−ΔH/RT). The values of α, n, and ΔH were in the following ranges (±95% confidence interval): α, 0.010–0.015 (±0.005 1/MPa); n, 2.2–3.1 (±0.5); and ΔH, 54–66 (±8 kJ/mol). The rate kinetics analysis indicated that short-circuit diffusion was a contributing mechanism to dislocation motion during creep. The rate kinetics analysis also determined that a minimum creep rate trend could not be developed between the as-fabricated versus aged conditions. This study showed that the elevated temperature aging treatments introduced multiple changes to the Sn-Ag-Bi microstructure that did not result in a simple loss (“softening”) of its mechanical strength.

Revealing Extremely Low Energy Amplitude Modes in the Charge-Density-Wave Compound LaAgSb_{2}.

PubMed

Chen, R Y; Zhang, S J; Zhang, M Y; Dong, T; Wang, N L

2017-03-10

Using infrared spectroscopy and ultrafast pump probe measurement, we have studied the two charge-density-wave (CDW) instabilities in the layered compound LaAgSb_{2}. The development of CDW energy gaps was clearly observed by optical spectroscopy, which removed most of the free carrier spectral weight. More interestingly, our time-resolved measurements revealed two coherent oscillations that softened by approaching the two phase transition temperatures, respectively. We addressed that these two oscillations come from the amplitude modes of CDW collective excitations, the surprisingly low energies (0.12 THz and 0.34 THz for the higher and lower temperature ones, respectively) of which are associated with the extremely small nesting wave vectors. Additionally, the amplitude and relaxation time of photoinduced reflectivity of LaAgSb_{2} single crystals stayed unchanged across the CDW phase transitions, which is quite rare and deserves further investigation.

Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode

PubMed Central

Song, Chunyan; Zhang, Nan; Lin, Jie; Guo, Xiaoyang; Liu, Xingyuan

2017-01-01

A novel UV transparent conducting films based on Sb2O3/Ag/Sb2O3 (SAS) structure, which were prepared by an electron-beam thermal evaporation at room temperature. This SAS exhibits excellent electrical, optical and stable properties. Especially for UV region, the SAS has high transmittance of 80% at 306 nm and 92% at 335 nm, meanwhile achieving low sheet resistance ( ≤ 10 Ω sq−1). The UV OLED based on the SAS show competitive device performance. The UV OLED obtains the peak of UV electroluminescence at 376 nm and shows a very high maximum EQE of 4.1% with the maximum output power density of 5.18 mW cm−2. These results indicate that the potential of SAS applications in deep UV transparent electrodes and large-scale flexible transparent electronics. PMID:28120888

Ab initio surface properties of Ag-Sn alloys: implications for lead-free soldering.

PubMed

Saleh, Gabriele; Xu, Chen; Sanvito, Stefano

2018-02-07

Ag and Sn are the major components of solder alloys adopted to assemble printed circuit boards. The qualities that make them the alloys of choice for the modern electronic industry are related to their physical and chemical properties. For corrosion resistance and solderability, surface properties are particularly important. Yet, atomic-level information about the surfaces of these alloys is not known. Here we fill this gap by presenting an extensive ab initio investigation of composition, energetics, structure and reactivity of Ag-Sn alloy surfaces. The structure and stability of various surfaces is evaluated, and the main factors determining the energetics of surface formation are uncovered. Oxygen and sulphur chemisorptions are studied and discussed in the framework of corrosion tendency, an important issue for printed circuit boards. Adsorption energy trends are rationalized based on the analysis of structural and electronic features.

Electrochemical treatment of 2, 4-dichlorophenol using a nanostructured 3D-porous Ti/Sb-SnO2-Gr anode: Reaction kinetics, mechanism, and continuous operation.

PubMed

Asim, Sumreen; Zhu, Yunqing; Batool, Aisha; Hailili, Reshalaiti; Luo, Jianmin; Wang, Yuanhao; Wang, Chuanyi

2017-10-01

2, 4-dichlorophenol (2, 4-DCP) is considered to be a highly toxic, mutagenic, and possibly carcinogenic pollutant. This study is focused on the electrochemical oxidation of 2, 4-DCP on nanostructured 3D-porous Ti/Sb-SnO 2 -Gr anodes, with the aim of presenting a comprehensive elucidation of mineralization process through the investigation of influential kinetics, the reactivity of hydroxyl radical's and analysis of intermediates. High efficiency was achieved at pH of 3 using Na 2 SO 4 electrolytes at a current density of 30 mA cm -2 . Under the optimized conditions, a maximum removal of 2, 4-DCP of up to 99.9% was reached, whereas a TOC removal of 81% was recorded with the lowest EC TOC (0.49 kW h g -1 ) within 40 min of electrolysis. To explore the stability of the 3D-Ti/Sb-SnO 2 -Gr electrodes, a continuous electrochemical operation was established, and the consistent mineralization results indicated the effectiveness of the 3D-Ti/Sb-SnO 2 -Gr system concerning its durability and practical utilization. EPR studies demonstrated the abundant generation of OH radicals on 3D-Ti/Sb-SnO 2 -Gr, resulting in fast recalcitrant pollutant incineration. From dechlorination and the reactivity of the OH radicals, several intermediates including six cyclic byproducts and three aliphatic carboxylic acids were detected, and two possible degradation pathways were proposed that justify the complete mineralization of 2, 4-DCP. Copyright © 2017 Elsevier Ltd. All rights reserved.

Relationship between morphologies and orientations of Cu{sub 6}Sn{sub 5} grains in Sn3.0Ag0.5Cu solder joints on different Cu pads

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Yanhong, E-mail: tianyh@hit.edu.cn; Zhang, Rui; Hang, Chunjin

2014-02-15

The morphologies and orientations of Cu{sub 6}Sn{sub 5} intermetallic compounds in the Sn3.0Ag0.5Cu solder joints both on polycrystalline and single crystal Cu pads under different peak reflow temperatures and times above liquids were investigated. The relationship between Cu{sub 6}Sn{sub 5} grain orientations and morphologies was clarified. At the interface of Sn3.0Ag0.5Cu/polycrystalline Cu pad, scalloped Cu{sub 6}Sn{sub 5} intermetallic compounds formed at 250 °C and roof shape Cu{sub 6}Sn{sub 5} formed at 300 °C. Both scalloped Cu{sub 6}Sn{sub 5} and roof shape Cu{sub 6}Sn{sub 5} had a preferred orientation of (0001) plane being parallel to polycrystalline Cu pad surface. Besides, themore » percentage of large angle grain boundaries increased as the peak reflow temperature rose. At the interface of Sn3.0Ag0.5Cu/(111) single crystal Cu pad, the Cu{sub 6}Sn{sub 5} intermetallic compounds were mainly scallop-type at 250 °C and were prism type at 300 °C. The prismatic Cu{sub 6}Sn{sub 5} grains grew along the three preferred directions with the inter-angles of 60° on (111) single crystal Cu pad while along two perpendicular directions on (100) single crystal Cu pad. The orientation relationship between Cu{sub 6}Sn{sub 5} grains and the single crystal Cu pads was investigated by electron backscatter diffraction technology. In addition, two types of hollowed Cu{sub 6}Sn{sub 5} intermetallic compounds were found inside the joints of polycrystalline Cu pads. The long hexagonal Cu{sub 6}Sn{sub 5} strips were observed in the joints reflowing at 250 °C while the hollowed Cu{sub 6}Sn{sub 5} strips with the ‘▪’ shape cross-sections appeared at 300 °C, which was attributed to the different grain growth rates of different Cu{sub 6}Sn{sub 5} crystal faces. - Highlights: • The orientation of interfacial Cu{sub 6}Sn{sub 5} grains was obtained by EBSD technology. • Two types of hollowed Cu{sub 6}Sn{sub 5} strips were found at different temperatures. • The

Indentation Size Effect on Ag Nanoparticle-Modified Graphene/Sn-Ag-Cu Solders

NASA Astrophysics Data System (ADS)

Xu, L. Y.; Zhang, S. T.; Jing, H. Y.; Wang, L. X.; Wei, J.; Kong, X. C.; Han, Y. D.

2018-01-01

This paper presents the results for the indentation size effect (ISE) on the creep stress exponent and hardness of 0.03 wt.% Ag-modified graphene nanosheet Sn-Ag-Cu solder alloys, using constant loading/holding and multi-cycle (CMC) loading methods, respectively. At each maximum load, with increasing indentation depth, the creep exponent first decreased and then increased. At the same strain rate, the stress exponent also showed the same tendency, increasing as the indentation depth (peak load) increased and then decreased. The hardness was measured continuously with increasing indentation depth by the CMC loading method. The hardness did not exhibit a decrease as the indentation depth increased, which differs from the classical description of the ISE. After an initial decrease, the hardness then increased and finally decreased as the indentation depth increased. This study reviews the existing theories and formulations describing ISE with hardening effects. The experimental results fit well with the empirical formulation. The phenomenon of ISE accompanied by hardening effects has been explained physically via the interaction between geometrically necessary dislocations and grain boundaries.

Spectroscopic properties of 130Sb, 132Te and 134I nuclei in 100-132Sn magic cores

NASA Astrophysics Data System (ADS)

Benrachi, Fatima; Khiter, Meriem; Laouet, Nadjet

2017-09-01

We have performed shell model calculations by means of Oxbash nuclear structure code using recent experimental single particle (spes) and single hole (shes) energies with valence space models above the 100sn and 132sn doubly magic cores. The two-body matrix elements (tbme) of original CD-Bonn realistic interaction are introduced after have been modified taking into account the three-body forces. We have focused our study on spectroscopic properties evaluation of 130Sb, 132Te and 134I nuclei, in particular their energy spectra, transition probabilities and moments have been determined. The getting spectra are in reasonable agreement with the experimental data.

The Role of Annealing Process in Ag-Based BaSnO3 Multilayer Thin Films.

PubMed

Wu, Muying; Yu, Shihui; He, Lin; Yang, Lei; Zhang, Weifeng

2016-12-01

The BaSnO3/Ag/BaSnO3 multilayer structure was designed and fabricated on a quartz glass by magnetron sputtering, followed by an annealing process at a temperature from 150 to 750 °C in air. In this paper, we investigated the influence of the annealing temperature on the structural, optical, and electrical properties of the multilayers and proposed the mechanisms of conduction and transmittance. The maximum value of the figure of merit of 31.8 × 10(-3) Ω(-1) was achieved for the BaSnO3/Ag/BaSnO3 multilayer thin films annealed at 150 °C, while the average optical transmittance in the visible ranges was >84 %, the resistivity was 5.71 × 10(-5) Ω cm, and the sheet resistance was 5.57 Ω/sq. When annealed at below 600 °C, the values of resistivity and transmittance of the multilayers were within an acceptable range (resistivity <5.0 × 10(-4) Ω cm, transmittance >80 %). The observed property of the multilayer film is suitable for the application of transparent conductive electrodes.

Effect of p–d hybridization, structural distortion and cation electronegativity on electronic properties of ZnSnX{sub 2} (X=P, As, Sb) chalcopyrite semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mishra, S.; Ganguli, B., E-mail: biplabg@nitrkl.ac.in

2013-04-15

Significant effects of p–d hybridization, structural distortion and cation-electro-negativity are found on band gap in ZnSnX{sub 2} (X=P, As, Sb). Our study suggests these compounds to be direct band gap semiconductors with band gaps of 1.23, 0.68 and 0.19 eV respectively. Lattice constants, tetragonal distortion (η), anion displacement, bond lengths and bulk moduli are calculated by Density Functional Theory based on Tight binding Linear Muffin-Tin orbital method. Our result of structural properties is in good agreement with the available experimental and other theoretical results. Calculated band gaps also agree well with the experimental works within LDA limitation. Unlike other semiconductorsmore » in the group II–IV–V{sub 2}, there is a reduction in the band gap of 0.22, 0.20 and 0.24 eV respectively in ZnSnX{sub 2} (X=P, As, Sb) due to p–d hybridization. Structural distortion decreases band gap by 0.20, 0.12 and 0.10 eV respectively. We find that cation electronegativity effect is responsible for increasing the band gap relative to their binary analogs GaInP{sub 2}, InGaAs{sub 2} and GaInSb{sub 2} respectively and increment are 0.13, 0.04 and 0.13 eV respectively. - Graphical abstract: One unit cell of ZnSnX{sub 2} (X=P, As, Sb) chalcopyrite semiconductor. Semiconductors ZnSnX{sub 2} (X=P, As, Sb) are found to be direct band gap semiconductors with band gaps 1.23, 0.68 and 0.19 eV respectively. The quantitative estimate of effects of p–d hybridization, structural distortion and cation electronegativity shows band gaps change significantly due to these effects. Highlights: ► ZnSnX{sub 2} (X=P, As, Sb) are direct band gap semiconductors. ► These have band gaps of 1.23 eV, 0.68 eV and 0.19 eV respectively. ► The band gap reduction due to p–d hybridization is 13.41%, 18.51% and 40% respectively. ► Band gap reduction due to structural distortion is 12.12%, 11.11% and 16.66% respectively. ► Band gap increases 8.38%, 3.70% and 21

Morphological and Microstructural Evolution of Phosphorous-Rich Layer in SnAgCu/Ni-P UBM Solder Joint

NASA Astrophysics Data System (ADS)

Lin, Yung-Chi; Shih, Toung-Yi; Tien, Shih-Kang; Duh, Jenq-Gong

2007-11-01

Interfacial morphologies and microstructure of Sn-3Ag-0.5Cu/Ni-P under bump metallization (UBM) with various phosphorous contents were investigated by transmission electron microscope (TEM) and field emission electron probe microanalyzer (FE-EPMA). It was revealed that as the Ni-Sn-P compound was formed between the solder matrix and Ni-P UBM, the conventionally so-called phosphorous-rich (P-rich) layer was transformed to a series of layer compounds, including Ni3P, Ni12P5 and Ni2P. The relationship between Ni-Sn-P formation and evolution of P-rich layers was probed by electron microscopic characterization with the aid of the phase diagram of Ni-P. On the basis of the TEM micrograph, the selected area diffraction (SAD) pattern, and the FE-EPMA results, the detailed phase evolution of P-rich layers in the SnAgCu/Ni-P joint was revealed and proposed.

Formation of highly preferred orientation of β-Sn grains in solidified Cu/SnAgCu/Cu micro interconnects under temperature gradient effect

NASA Astrophysics Data System (ADS)

Zhao, N.; Zhong, Y.; Dong, W.; Huang, M. L.; Ma, H. T.; Wong, C. P.

2017-02-01

β-Sn grain orientation and configuration are becoming crucial factors to dominate the lifetime of solder interconnects in three-dimensional integrated circuit packaging. In this paper, we found that a temperature gradient during solidification significantly dominated the orientation and configuration of the final β-Sn grains in Cu/SnAgCu/Cu micro interconnects. Being different from the random orientations and growth fronts meeting or cyclic twin boundary forming near the center after homogeneous temperature bonding, the β-Sn grains solidified under a certain temperature gradient were observed to follow a highly preferred orientation with their c-axis departing from the direction of temperature gradient by about 45°-88°. Meanwhile, these preferred oriented β-Sn grains consisted of low angle grain boundary structures with misorientation in the range of 0°-15°. The mechanism was explained in terms of the anisotropy and directional growth of β-Sn grains. The results pave the way for grain orientation control in 3D packaging technology.

Thermoelectric properties of p-type sb-doped Cu2SnSe3 near room and mid temperature applications

NASA Astrophysics Data System (ADS)

Prasad, K. Shyam; Rao, Ashok; Chauhan, Nagendra S.; Bhardwaj, Ruchi; Vishwakarma, Avinash; Tyagi, Kriti

2018-02-01

In this study, we report low and mid temperature range thermoelectric properties of Sb-substituted Cu2SnSe3 compounds. The Cu2Sn1- x Sb x Se3 (0 ≤ x ≤ 0.04) alloys were prepared using conventional solid-state reaction followed by spark plasma sintering. The crystal structure was characterized using XRD and it reveals that all the samples exhibit cubic structure with space group -4/3m. The electrical transport characteristics indicate degenerate semiconducting behavior. Electrical resistivity was found to follow small polaron hopping (SPH) model in the entire temperature range of investigation. The Seebeck coefficient data reveals that the majority of charge carriers are holes and the analysis of Seebeck coefficient data gives negative values of Fermi energy indicating that the Fermi energy is below the edge of valence band. The electronic contribution ( κ e) for total thermal conductivity is found to be less than 1%. The maximum ZT value of 0.64 is observed for the sample with x = 0.03 (at 700 K) which is approximately 2.3 times that of the pristine sample.

Observation of Dirac-like band dispersion in LaAgSb 2

DOE PAGES

Shi, X.; Richard, P.; Wang, Kefeng; ...

2016-02-16

In this paper, we present a combined angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations study of the electronic structure of LaAgSb 2 in the entire first Brillouin zone. We observe a Dirac-cone-like structure in the vicinity of the Fermi level formed by the crossing of two linear energy bands, as well as the nested segments of a Fermi surface pocket emerging from the cone. In conclusion, our ARPES results show the close relationship of the Dirac cone to the charge-density-wave ordering, providing consistent explanations for exotic behaviors in this material.

Size effect model on kinetics of interfacial reaction between Sn-xAg-yCu solders and Cu substrate

PubMed Central

Huang, M. L.; Yang, F.

2014-01-01

The downsizing of solder balls results in larger interfacial intermetallic compound (IMC) grains and less Cu substrate consumption in lead-free soldering on Cu substrates. This size effect on the interfacial reaction is experimentally demonstrated and theoretically analyzed using Sn-3.0Ag-0.5Cu and Sn-3.5Ag solder balls. The interfacial reaction between the Sn-xAg-yCu solders and Cu substrates is a dynamic response to a combination of effects of interfacial IMC growth, Cu substrate consumption and composition variation in the interface zone. A concentration gradient controlled (CGC) kinetics model is proposed to explain the combined effects. The concentration gradient of Cu at the interface, which is a function of solder volume, initial Cu concentration and reaction time, is the root cause of the size effect. We found that a larger Cu concentration gradient results in smaller Cu6Sn5 grains and more consumption of Cu substrate. According to our model, the growth kinetics of interfacial Cu6Sn5 obeys a t1/3 law when the molten solder has approached the solution saturation, and will be slower otherwise due to the interfering dissolution mechanism. The size effect introduced in this model is supported by a good agreement between theoretical and experimental results. Finally, the scope of application of this model is discussed. PMID:25408359

Layered Halide Double Perovskites Cs3+nM(II)nSb2X9+3n (M = Sn, Ge) for Photovoltaic Applications.

PubMed

Tang, Gang; Xiao, Zewen; Hosono, Hideo; Kamiya, Toshio; Fang, Daining; Hong, Jiawang

2018-01-04

Over the past few years, the development of lead-free and stable perovskite absorbers with excellent performance has attracted extensive attention. Much effort has been devoted to screening and synthesizing this type of solar cell absorbers. Here, we present a general design strategy for designing the layered halide double perovskites Cs 3+n M(II) n Sb 2 X 9+3n (M = Sn, Ge) with desired photovoltaic-relevant properties by inserting [MX 6 ] octahedral layers, based on the principles of increased electronic dimensionality. Compared to Cs 3 Sb 2 I 9 , more suitable band gaps, smaller carrier effective masses, larger dielectric constants, lower exciton binding energies, and higher optical absorption can be achieved by inserting variable [SnI 6 ] or [GeI 6 ] octahedral layers into the [Sb 2 I 9 ] bilayers. Moreover, our results show that adjusting the thickness of inserted octahedral layers is an effective approach to tune the band gaps and carrier effective masses in a large range. Our work provides useful guidance for designing the promising layered antimony halide double perovskite absorbers for photovoltaic applications.

Interfacial reactions and compound formation of Sn-Ag-Cu solders by mechanical alloying on electroless Ni-P/Cu under bump metallization

NASA Astrophysics Data System (ADS)

Kao, Szu-Tsung; Duh, Jenq-Gong

2005-08-01

Electroless Ni-P under bump metallization (UBM) has been widely used in electronic interconnections due to the good diffusion barrier between Cu and solder. In this study, the mechanical alloying (MA) process was applied to produce the SnAgCu lead-free solder pastes. Solder joints after annealing at 240°C for 15 min were employed to investigate the evolution of interfacial reaction between electroless Ni-P/Cu UBM and SnAgCu solder with various Cu concentrations ranging from 0.2 to 1.0 wt.%. After detailed quantitative analysis with an electron probe microanalyzer, the effect of Cu content on the formation of intermetallic compounds (IMCs) at SnAgCu solder/electroless Ni-P interface was evaluated. When the Cu concentration in the solder was 0.2 wt.%, only one (Ni, Cu)3Sn4 layer was observed at the solder/electroless Ni-P interface. As the Cu content increased to 0.5 wt.%, (Cu, Ni)6Sn5 formed along with (Ni, Cu)3Sn4. However, only one (Cu, Ni)6Sn5 layer was revealed, if the Cu content was up to 1 wt.%. With the aid of microstructure evolution, quantitative analysis, and elemental distribution by x-ray color mapping, the presence of the Ni-Sn-P phase and P-rich layer was evidenced.

Comparison of Extensive Thermal Cycling Effects on Microstructure Development in Micro-alloyed Sn-Ag-Cu Solder Joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Iver E.; Boesenberg, Adam; Harringa, Joel

2011-09-28

Pb-free solder alloys based on the Sn-Ag-Cu (SAC) ternary eutectic have promise for widespread adoption across assembly conditions and operating environments, but enhanced microstructural control is needed. Micro-alloying with elements such as Zn was demonstrated for promoting a preferred solidification path and joint microstructure earlier in simple (Cu/Cu) solder joints studies for different cooling rates. This beneficial behavior now has been verified in reworked ball grid array (BGA) joints, using dissimilar SAC305 (Sn-3.0Ag-0.5Cu, wt.%) solder paste. After industrial assembly, BGA components joined with Sn-3.5Ag-0.74Cu-0.21Zn solder were tested in thermal cycling (-55 C/+125 C) along with baseline SAC305 BGA joints beyondmore » 3000 cycles with continuous failure monitoring. Weibull analysis of the results demonstrated that BGA components joined with SAC + Zn/SAC305 have less joint integrity than SAC305 joints, but their lifetime is sufficient for severe applications in consumer, defense, and avionics electronic product field environments. Failure analysis of the BGA joints revealed that cracking did not deviate from the typical top area (BGA component side) of each joint, in spite of different Ag3Sn blade content. Thus, SAC + Zn solder has not shown any advantage over SAC305 solder in these thermal cycling trials, but other characteristics of SAC + Zn solder may make it more attractive for use across the full range of harsh conditions of avionics or defense applications.« less

The Mechanical and Microstructural Changes of Sn-Ag-Bi Solders with Cooling Rate and Bi Content Variations

NASA Astrophysics Data System (ADS)

Abd El-Rehim, A. F.; Zahran, H. Y.; AlFaify, S.

2018-02-01

The purpose of this study is to investigate the influence of cooling rate and Bi addition on the microstructure evolution and mechanical properties of Sn-3.5Ag alloy. A series of Sn-3.5Ag-xBi solders has been fabricated with Bi content in the range of 0.5-3.5 wt.%. After solution heat treatment at 170 °C for 24 h and subsequent aging heat treatment at 100 °C for 2 h, samples were divided into two groups. One group was rapidly quenched into iced water (water quenching) for the fast cooling rate (20 °C/s), while the second group was slowly cooled (furnace cooling) in the furnace for the slow cooling rate (0.2 °C/s) after the furnace reflow. The microstructural evolutions of the present solders have been investigated using x-ray diffraction and scanning electron microscopy. The microhardness was measured to correlate the mechanical properties to alloy compositions and cooling rate. It was found that the microhardness of Sn-3.5Ag-xBi solders increased with increasing cooling rate. The indentation creep curves have been evaluated from the obtained microhardness values. Results revealed the steady-state creep rate decreased with increasing Bi content exhibiting an anomalous behavior at 2.5Bi. The reason for improved creep resistance of Sn-3.5Ag-xBi solders is the result of the combination of the solid solution strengthening and precipitation strengthening of Bi. The mean values of stress exponent indicated that the operative creep mechanism is dislocation climb.

Physical and photoelectrochemical properties of Sb-doped SnO2 thin films deposited by chemical vapor deposition: application to chromate reduction under solar light

NASA Astrophysics Data System (ADS)

Outemzabet, R.; Doulache, M.; Trari, M.

2015-05-01

Sb-doped SnO2 thin films (Sb-SnO2) are prepared by chemical vapor deposition. The X-ray diffraction indicates a rutile phase, and the SEM analysis shows pyramidal grains whose size extends up to 200 nm. The variation of the film thickness shows that the elaboration technique needs to be optimized to give reproducible layers. The films are transparent over the visible region. The dispersion of the optical indices is evaluated by fitting the diffuse reflectance data with the Drude-Lorentz model. The refractive index ( n) and absorption coefficient ( k) depend on both the conditions of preparation and of the doping concentration and vary between 1.4 and 2.0 and 0.2 and 0.01, respectively. Tin oxide is nominally non-stoichiometric, and the conduction is dominated by thermally electrons jump with an electron mobility of 12 cm2 V-1 s-1 for Sb-SnO2 (1 %). The ( C 2- V) characteristic in aqueous electrolyte exhibits a linear behavior from which an electrons density of 4.15 × 1018 cm-3 and a flat-band potential of -0.83 V SCE are determined. The electrochemical impedance spectroscopy shows a semicircle attributed to a capacitive behavior with a low density of surface states. The center lies below the real axis with a depletion angle (12°), due to a constant phase element, i.e., a deviation from a pure capacitive behavior, presumably attributed to the roughness and porosity of the film. The straight line at low frequencies is attributed to the Warburg diffusion. The energy diagram reveals the photocatalytic feasibility of Sb-SnO2. As application, 90 % of the chromate concentration (20 mg L-1, pH ~3) disappears after 6 h of exposure to solar light.

A Top-Down Strategy toward SnSb In-Plane Nanoconfined 3D N-Doped Porous Graphene Composite Microspheres for High Performance Na-Ion Battery Anode.

PubMed

Qin, Jian; Wang, Tianshuai; Liu, Dongye; Liu, Enzuo; Zhao, Naiqin; Shi, Chunsheng; He, Fang; Ma, Liying; He, Chunnian

2018-03-01

Engineering of 3D graphene/metal composites with ultrasmall sized metal and robust metal-graphene interfacial interaction for energy storage application is still a challenge and rarely reported. In this work, a facile top-down strategy is developed for the preparation of SnSb-in-plane nanoconfined 3D N-doped porous graphene networks for sodium ion battery anodes, which are composed of several tens of interconnected empty N-graphene boxes in-plane firmly embedded with ultrasmall SnSb nanocrystals. The all-around encapsulation (plane-to-plane contact) architecture that provides a large interface between N-graphene and SnSb nanocrystal not only effectively enhances the electron conductivity and structural integrity of the overall electrode, but also offers excess interfacial sodium storage, thus leading to much enhanced high-rate sodium storage capacity and stability, which has been proven by both experimental results and first-principles simulations. Moreover, this top-down strategy can enable new paths to the low-cost and high-yield synthesis of 3D graphene/metal composites for applications in energy-related fields and beyond. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microstructural behavior of iron and bismuth added Sn-1Ag-Cu solder under elevated temperature aging

NASA Astrophysics Data System (ADS)

Ali, Bakhtiar; Sabri, Mohd Faizul Mohd; Jauhari, Iswadi

2016-07-01

An extensive study was done to investigate the microstructural behavior of iron (Fe) and bismuth (Bi) added Sn-1Ag-0.5Cu (SAC105) under severe thermal aging conditions. The isothermal aging was done at 200 °C for 100 h, 200 h, and 300 h. Optical microscopy with cross-polarized light revealed that the grain size significantly reduces with Fe/Bi addition to the base alloy SAC105 and remains literally the same after thermal aging. The micrographs of field emission scanning electron microscopy (FESEM) with backscattered electron detector and their further analysis via imageJ software indicated that Fe/Bi added SAC105 showed a significant reduction in the IMCs size (Ag3Sn and Cu6Sn5), especially the Cu6Sn5 IMCs, as well as β-Sn matrix and a refinement in the microstructure, which is due to the presence of Bi in the alloys. Moreover, their microstructure remains much more stable under severe thermal aging conditions, which is because of the presence of both Fe and Bi in the alloy. The microstructural behavior suggests that Fe/Bi modified SAC105 would have much improved reliability under severe thermal environments. These modified alloys also have relatively low melting temperature and low cost.

The Effect of Sn Orientation on Intermetallic Compound Growth in Idealized Sn-Cu-Ag Interconnects

NASA Astrophysics Data System (ADS)

Kinney, Chris; Linares, Xioranny; Lee, Kyu-Oh; Morris, J. W.

2013-04-01

The work reported here explores the influence of crystal orientation on the growth of the interfacial intermetallic layer during electromigration in Cu||Sn||Cu solder joints. The samples were thin, planar Sn-Ag-Cu (SAC) solder layers between Cu bars subject to a uniaxial current. Electron backscatter diffraction (EBSD) was used to characterize the microstructure before and after testing. The most useful representation of the EBSD data identifies the Sn grain orientation by the angle between the Sn c-axis and the current direction. The tested samples included single-crystal joints with c-axis nearly parallel to the current ("green" samples) and with c-axis perpendicular to the current ("red" samples). At current density of 104 A/cm2 (steady-state temperature of ~150°C), an intermetallic layer grew at an observable rate in the "green" samples, but not in the "red" ones. A current density of 1.15 × 104 A/cm2 (temperature ~160°C) led to measurable intermetallic growth in both samples. The growth fronts were nearly planar and the growth rates constant (after an initial incubation period); the growth rates in the "green" samples were about 10× those in the "red" samples. The Cu concentrations were constant within the joints, showing that the intermetallic growth is dominated by the electromigration flux. The measured growth rates and literature values for the diffusion of Cu in Sn were used to extract values for the effective charge, z *, that governs the electromigration of Cu. The calculated value of z * is significantly larger for current perpendicular to the c-axis than along it.

Sn-Ag-Cu Nanosolders: Solder Joints Integrity and Strength

NASA Astrophysics Data System (ADS)

Roshanghias, Ali; Khatibi, Golta; Yakymovych, Andriy; Bernardi, Johannes; Ipser, Herbert

2016-08-01

Although considerable research has been dedicated to the synthesis and characterization of lead-free nanoparticle solder alloys, only very little has been reported on the reliability of the respective joints. In fact, the merit of nanoparticle solders with depressed melting temperatures close to the Sn-Pb eutectic temperature has always been challenged when compared with conventional solder joints, especially in terms of inferior solderability due to the oxide shell commonly present on the nanoparticles, as well as due to compatibility problems with common fluxing agents. Correspondingly, in the current study, Sn-Ag-Cu (SAC) nanoparticle alloys were combined with a proper fluxing vehicle to produce prototype nanosolder pastes. The reliability of the solder joints was successively investigated by means of electron microscopy and mechanical tests. As a result, the optimized condition for employing nanoparticles as a competent nanopaste and a novel procedure for surface treatment of the SAC nanoparticles to diminish the oxide shell prior to soldering are being proposed.

Synthesis, Characterization and Photocatalytic Activity of Ag+ - and Sn2+ -Doped KTi0.5 Te1.5 O6.

PubMed

Guje, Ravinder; Gundeboina, Ravi; Reddy, Jitta Raju; Veldurthi, Naveen Kumar; Kurra, Sreenu; Vithal, Muga

2016-03-01

In this study, the photocatalytic dye degradation efficiency of KTi 0.5 Te 1.5 O 6 synthesized through solid-state method was enhanced by cation (Ag + /Sn +2 ) doping at potassium site via ion exchange method. As prepared materials were characterized by XRD, SEM-EDS, IR, TGA and UV-Vis Diffuse reflectance spectroscopic (DRS) techniques. All the compounds were crystallized in cubic lattice with Fd3¯m space group. The bandgap energies of parent, Ag + - and Sn +2 -doped KTi 0.5 Te 1.5 O 6 materials obtained from DRS profiles were found to be 2.96, 2.55 and 2.40 eV, respectively. Photocatalytic efficiency of parent, Ag + - and Sn +2 -doped materials was evaluated against the degradation of methylene blue (MB) and methyl violet (MV) dyes under visible light irradiation. The Sn +2 -doped KTi 0.5 Te 1.5 O 6 showed higher activity toward the degradation of both MB and MV dyes and its higher activity is ascribed to the lower bandgap energy compared to the parent and Ag + -doped KTi 0.5 Te 1.5 O 6 . The mechanistic degradation pathway of methylene blue (MB) was studied in the presence of Sn 2+ -doped KTi 0.5 Te 1.5 O 6 . Quenching experiments were performed to know the participation of holes, super oxide and hydroxyl radicals in the dye degradation process. The stability and reusability of the catalysts were studied. © 2015 The American Society of Photobiology.

Filled Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) Skutterudites: Processing and Thermoelectric Properties

NASA Technical Reports Server (NTRS)

Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

2015-01-01

Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3 or CoAs3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) system has been investigated as both a p- and n-type thermoelectric material, and is stable up to 200 degrees Centigrade. Yb, Ce, and Dy fillers have been introduced into the skutterudite to study the influence of both the type and the quantity of fillers on processing conditions and thermoelectric properties. The system was processed through a multi-step technique that includes solidification, mechano-chemical alloying, and hot pressing which will be discussed along with thermoelectric transport properties.

Spreading Dynamics and Interfacial Characteristics of Sn-3.0Ag-0.5Cu- xBi Melting on Cu Substrates

NASA Astrophysics Data System (ADS)

Xu, Bingsheng; Chen, Junwei; Yuan, Zhangfu; Zang, Likun; Zhang, Lina; Wu, Yan

2016-05-01

The effects of Bi addition on the properties of Sn-3.0Ag-0.5Cu molten alloy on Cu substrates are discussed using wettability and interface microstructure analysis. The changes of the contact angles between Sn-3.0Ag-0.5Cu- xBi and Cu substrates with the spreading time are described by Dezellus model. It indicates that the spreading process is governed by the interfacial reaction during the dwelling time. The interface microstructure is observed to clarify the effects of reactions on the spreading behavior. It is found that Cu6Sn5 is formed adjacent to the solder and Cu3Sn appears over the substrate with Bi added at 613K, indicating that Bi exists between the intermetallics and the addition of Bi can hinder the diffusion of copper towards the interior of the solder. Therefore the existence of Bi decreases the agglomeration of Cu-Sn grains. The growth of intermetallics is thus limited and the shape of intermetallics transforms from scallop to zigzag consequently. However, the segregation phenomenon appears when the additive amount of Bi is more than 5.5mass %, which could lead to the occurrence of fracture and degrade the performance of Sn-3.0Ag-0.5Cu- xBi alloy. The results of the present study provide basic physical and chemical data for the application of lead-free solder in the future microgravity space environment.

Soldering Characteristics and Mechanical Properties of Sn-1.0Ag-0.5Cu Solder with Minor Aluminum Addition.

PubMed

Leong, Yee Mei; Haseeb, A S M A

2016-06-28

Driven by the trends towards miniaturization in lead free electronic products, researchers are putting immense efforts to improve the properties and reliabilities of Sn based solders. Recently, much interest has been shown on low silver (Ag) content solder SAC105 (Sn-1.0Ag-0.5Cu) because of economic reasons and improvement of impact resistance as compared to SAC305 (Sn-3.0Ag-0.5Cu. The present work investigates the effect of minor aluminum (Al) addition (0.1-0.5 wt.%) to SAC105 on the interfacial structure between solder and copper substrate during reflow. The addition of minor Al promoted formation of small, equiaxed Cu-Al particle, which are identified as Cu₃Al₂. Cu₃Al₂ resided at the near surface/edges of the solder and exhibited higher hardness and modulus. Results show that the minor addition of Al does not alter the morphology of the interfacial intermetallic compounds, but they substantially suppress the growth of the interfacial Cu₆Sn₅ intermetallic compound (IMC) after reflow. During isothermal aging, minor alloying Al has reduced the thickness of interfacial Cu₆Sn₅ IMC but has no significant effect on the thickness of Cu₃Sn. It is suggested that of atoms of Al exert their influence by hindering the flow of reacting species at the interface.

Electrical transport property, thermal stability and oxidation resistance of single crystalline β-Zn4Sb3 prepared using the Bi-Sn mixed-flux method

NASA Astrophysics Data System (ADS)

Deng, Shuping; Li, Decong; Chen, Zhong; Tang, Yu; Shen, Lanxian; Deng, Shukang

2017-12-01

Single crystal samples β-Zn4Sb3 have been prepared by using Bi-Sn mixed-flux method. The obtained crystals exhibit p-type conduction behavior with carrier concentration varying from 4.40 × 1019 to 18.12 × 1019 cm-3 as carrier mobility changes from 25.8 to 61.5 cm2 V-1 s-1 at room temperature. Electrical transport properties of the samples were optimized by Bi-Sn co-doped, which brought by Bi-Sn mixed-flux. And the maximal power factor of 1.45 × 10-3 W m-1 K-2 is achieved at 510 K for the sample with Bi flux content x = 0.5. Consequently, the oxidation resistance of the sample was determined by exploring the effects of heat treatment in air on electrical transport properties and thermal stability, which the single crystalline β-Zn4Sb3 still possess an excellent oxidation resistance and thermal stability after the heat treatment process.

Elemental Topological Dirac Semimetal: α -Sn on InSb(111)

DOE PAGES

Xu, Cai-Zhi; Chan, Yang-Hao; Chen, Yige; ...

2017-04-04

Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. We have observed such bulk Dirac cones in epitaxially grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form, using angle-resolved photoemission spectroscopy. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point ofmore » a zero-gap semimetal phase to a topological insulator phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.« less

Effect of Mn Nanoparticles on Interfacial Intermetallic Compound Growth in Low-Ag Sn-0.3Ag-0.7Cu- xMn Solder Joints

NASA Astrophysics Data System (ADS)

Tang, Y.; Luo, S. M.; Li, G. Y.; Yang, Z.; Chen, R.; Han, Y.; Hou, C. J.

2018-02-01

Interfacial intermetallic compound (IMC) growth between Cu substrates and low-Ag Sn-0.3Ag-0.7Cu- xMn ( x = 0 wt.%, 0.02 wt.%, 0.05 wt.%, 0.1 wt.%, and 0.15 wt.%) (SAC0307- xMn) solders was investigated under different isothermal aging temperatures of 100°C, 150°C, and 190°C. Scanning electron microscopy (SEM) was employed to observe the microstructural evolution of the solder joints and measure the IMC layer thickness. The IMC phases were identified by energy-dispersive x-ray spectroscopy and x-ray diffraction. The results showed that a Cu6Sn5 IMC layer formed in the as-soldered solder joints, while a duplex structure consisting of a Cu6Sn5 IMC layer near the solder matrix and a Cu3Sn IMC layer was observed after isothermal aging. A considerable drop in the IMC layer thickness was observed when 0.1 wt.% Mn nanoparticles were added. Beyond this amount, the thickness of the IMC layer only slightly increases. Adding Mn nanoparticles can increase the activation energy and thus reduce the interdiffusion rates of the Sn and Cu atoms, which suppresses excessive IMC growth. The solder joint containing 0.1 wt.% Mn nanoparticles has the highest activation energy. SEM images revealed that the number of small particles precipitated in the channels between the Cu6Sn5 IMC layers increases with an increasing proportion of Mn nanoparticles. Based on the microstructural evolution of the solder joints, this study revealed that grain boundary pinning is one of the most important mechanisms for IMC growth inhibition when Mn nanoparticles are added.

Microstructural behavior of iron and bismuth added Sn-1Ag-Cu solder under elevated temperature aging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ali, Bakhtiar, E-mail: engrbakhtiaralikhan@gmail.com; Sabri, Mohd Faizul Mohd, E-mail: faizul@um.edu.my; Jauhari, Iswadi, E-mail: iswadi@um.edu.my

An extensive study was done to investigate the microstructural behavior of iron (Fe) and bismuth (Bi) added Sn-1Ag-0.5Cu (SAC105) under severe thermal aging conditions. The isothermal aging was done at 200 °C for 100 h, 200 h, and 300 h. Optical microscopy with cross-polarized light revealed that the grain size significantly reduces with Fe/Bi addition to the base alloy SAC105 and remains literally the same after thermal aging. The micrographs of field emission scanning electron microscopy (FESEM) with backscattered electron detector and their further analysis via imageJ software indicated that Fe/Bi added SAC105 showed a significant reduction in the IMCsmore » size (Ag{sub 3}Sn and Cu{sub 6}Sn{sub 5}), especially the Cu{sub 6}Sn{sub 5} IMCs, as well as β-Sn matrix and a refinement in the microstructure, which is due to the presence of Bi in the alloys. Moreover, their microstructure remains much more stable under severe thermal aging conditions, which is because of the presence of both Fe and Bi in the alloy. The microstructural behavior suggests that Fe/Bi modified SAC105 would have much improved reliability under severe thermal environments. These modified alloys also have relatively low melting temperature and low cost.« less

Anomalous creep in Sn-rich solder joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Ho Geon; Morris Jr., John W.; Hua, Fay

2002-03-15

This paper discusses the creep behavior of example Sn-rich solders that have become candidates for use in Pb-free solder joints. The specific solders discussed are Sn-3.5Ag, Sn-3Ag-0.5Cu, Sn-0.7Cu and Sn-10In-3.1Ag, used in thin joints between Cu and Ni-Au metallized pads.

Limits of carrier mobility in Sb-doped SnO{sub 2} conducting films deposited by reactive sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bissig, B., E-mail: Benjamin.bissig@empa.ch; Jäger, T.; Tiwari, A. N.

2015-06-01

Electron transport in Sb-doped SnO{sub 2} (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm{sup 2} V{sup −1} s{sup −1} to 6 cm{sup 2} V{sup −1} s{sup −1} when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10{sup −3} Ω cm corresponding to the mobility of 12 cm{sup 2} V{sup −1} s{sup −1}more » which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO{sub 2} films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.« less

Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75-xTixZr0.25NiSn0.99Sb0.01

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, Giri; Dahal, Tulashi; Chen, Shuo

The effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf0.75-xTixZr0.25NiSn0.99Sb0.01, has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. The ZT values below 500 °C of hot pressed Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 samples are significantly higher than those of the same way prepared Hf0.75Zr0.25NiSn0.99Sb0.01 samples at eachmore » temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.« less

Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75-xTixZr0.25NiSn0.99Sb0.01

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, Giri; Dahal, Tulashi; Chen, Shuo

The effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf 0.75-xTi xZr 0.25NiSn 0.99Sb 0.01, has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf 0.5Zr 0.25Ti 0.25NiSn 0.99Sb 0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. TheZT values below 500 °C of hot pressed Hf 0.5Zr 0.25Ti 0.25NiSn 0.99Sb 0.01 samplesmore » are significantly higher than those of the same way prepared Hf 0.75Zr 0.25NiSn 0.99Sb 0.01samples at each temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.« less

Synthesis and thermal behavior of tin-based alloy (Sn-Ag-Cu) nanoparticles

NASA Astrophysics Data System (ADS)

Roshanghias, Ali; Yakymovych, Andriy; Bernardi, Johannes; Ipser, Herbert

2015-03-01

The prominent melting point depression of nanoparticles has been the subject of a considerable amount of research. For their promising applications in electronics, tin-based nano-alloys such as near-eutectic Sn-Ag-Cu (SAC) alloys have been synthesized via various techniques. However, due to issues such as particle aggregation and oxidation or introduced impurities, the application of these nano-size particles has been confined or aborted. For instance, thermal investigations by DTA/DSC in a large number of studies revealed exothermic peaks in the range of 240-500 °C, i.e. above the melting point of SAC nanoparticles, with different and quite controversial explanations for this unclear phenomenon. This represents a considerable drawback for the application of nanoparticles. Correspondingly, in the current study, the thermal stability of SAC nanoparticles has been investigated via electron microscopy, XRD, FTIR, and DSC/TG analysis. It was found that the nanoparticles consist mainly of a metallic β-Sn core and an amorphous tin hydroxide shell structure. The SnO crystalline phase formation from this amorphous shell has been associated with the exothermic peaks on the first heating cycle of the nanoparticles, followed by a disproportionation reaction into metallic Sn and SnO2.The results also revealed that the surfactant and reducing agent cannot only affect the size and size distribution of the nanoparticles, they might also alter the ratio between the amorphous shell and the crystalline core in the structure of particles.The prominent melting point depression of nanoparticles has been the subject of a considerable amount of research. For their promising applications in electronics, tin-based nano-alloys such as near-eutectic Sn-Ag-Cu (SAC) alloys have been synthesized via various techniques. However, due to issues such as particle aggregation and oxidation or introduced impurities, the application of these nano-size particles has been confined or aborted. For

Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

NASA Astrophysics Data System (ADS)

Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

2014-12-01

A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

Investigation of the i 13 / 2 neutron orbital in the Sn 132 region: New excited levels in Sb 135

DOE Office of Scientific and Technical Information (OSTI.GOV)

Korgul, A.; Ba̧czyk, P.; Urban, W.

2015-02-01

Excited states in Sb-135, populated in spontaneous fission of Cm-248, are studied by means of prompt gamma spectroscopy, using the EUROGAM2 detector array. New excited states containing the neutron i(13/2) orbital in their wave functions are proposed. A more accurate value of the i(13/2) neutron single-particle energy in the Sn-132 core potential is determined

Synthesis of Structurally Diverse 2,3-Fused Indoles via Microwave-Assisted AgSbF6-Catalysed Intramolecular Difunctionalization of o-Alkynylanilines

PubMed Central

Huang, Yuanqiong; Yang, Yan; Song, Hongjian; Liu, Yuxiu; Wang, Qingmin

2015-01-01

2,3-Fused indoles are found in numerous natural products and drug molecules. Although several elegant methods for the synthesis of this structural motif have been reported, long reaction times and harsh conditions are sometimes required, and the yields tend to be low. Herein, we report a microwave method for straightforward access to various types of 2,3-fused indoles via AgSbF6-catalysed intramolecular difunctionalization of o-alkynylanilines. AgSbF6 played a role in both the hydroamination step and the imine-formation step. This method, which exhibited excellent chemoselectivity (no ring-fused 1,2-dihydroquinolines were formed), was used for formal syntheses of the natural products conolidine and ervaticine and the antihistamine drug latrepirdine. PMID:26310858

Ba-filled Ni–Sb–Sn based skutterudites with anomalously high lattice thermal conductivity

DOE PAGES

Paschinger, W.; Rogl, Gerda; Grytsiv, A.; ...

2016-06-21

Here, in this study, novel filled skutterudites Ba yNi 4Sb 12-xSn x (y max = 0.93) have been prepared by arc melting followed by annealing at 250, 350 and 450°C up to 30 days in vacuum-sealed quartz vials. Extension of the homogeneity region, solidus temperatures and structural investigations were performed for the skutterudite phase in the ternary Ni–Sn–Sb and in the quaternary Ba–Ni–Sb–Sn systems. Phase equilibria in the Ni–Sn–Sb system at 450°C were established by means of Electron Probe Microanalysis (EPMA) and X-ray Powder Diffraction (XPD). With rather small cages Ni 4(Sb,Sn) 12, the Ba–Ni–Sn–Sb skutterudite system is perfectly suitedmore » to study the influence of filler atoms on the phonon thermal conductivity. Single-phase samples with the composition Ni 4Sb 8.2Sn 3.8, Ba 0.42Ni 4Sb 8.2Sn 3.8 and Ba 0.92Ni 4Sb 6.7Sn 5.3 were used to measure their physical properties, i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. The resistivity data demonstrate a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from the maxima in the Seebeck coefficient data as a function of temperature. Single crystal X-ray structure analyses at 100, 200 and 300 K revealed the thermal expansion coefficients as well as Einstein and Debye temperatures for Ba 0.73Ni 4Sb 8.1Sn 3.9 and Ba 0.95Ni 4Sb 6.1Sn 5.9. These data were in accordance with the Debye temperatures obtained from the specific heat (4.4 K < T < 140 K) and Mössbauer spectroscopy (10 K < T < 290 K). Rather small atom displacement parameters for the Ba filler atoms indicate a severe reduction in the “rattling behaviour” consistent with the high levels of lattice thermal conductivity. The elastic moduli, collected from Resonant Ultrasonic Spectroscopy ranged from 100 GPa for Ni 4Sb 8.2Sn 3.8 to 116 GPa for Ba 0.92Ni 4Sb 6.7Sn 5.3. The thermal expansion coefficients were 11.8 × 10 -6 K -1 for Ni 4Sb 8.2Sn

Enthalpies of mixing of liquid systems for lead free soldering: Co–Sb–Sn

PubMed Central

Elmahfoudi, A.; Sabbar, A.; Flandorfer, H.

2012-01-01

The partial and integral enthalpy of mixing of molten ternary Co–Sb–Sn alloys was determined performing high temperature drop calorimetry in a large compositional range at 1273 K. Measurements have been done along five sections, xSb/xSn ≈ 1:1, xSb/xSn ≈ 1:3, xSb/xSn ≈ 3:1, xCo/xSn ≈ 1:4, and xCo/xSb ≈ 1:5. Additionally, binary alloys of the constituent systems Co–Sb and Co–Sn were investigated at the same temperature. All the binary data were evaluated by means of a standard Redlich–Kister polynomial fit whereas ternary data were fitted on the basis of an extended Redlich–Kister–Muggianu model for substitutional solutions. An iso-enthalpy plot of the ternary system was constructed. In addition, the extrapolation Model of Toop was applied and compared to our data. PMID:27087752

Viscoplastic Creep Response and Microstructure of As-Fabricated Microscale Sn-3.0Ag-0.5Cu Solder Interconnects

NASA Astrophysics Data System (ADS)

Cuddalorepatta, Gayatri; Williams, Maureen; Dasgupta, Abhijit

2010-10-01

The viscoplastic behavior of as-fabricated, undamaged, microscale Sn-3.0 Ag-0.5Cu (SAC305) Pb-free solder is investigated and compared with that of eutectic Sn-37Pb solder and near-eutectic Sn-3.8Ag-0.7Cu (SAC387) solder from prior studies. Creep measurements of microscale SAC305 solder shear specimens show significant piece-to-piece variability under identical loading. Orientation imaging microscopy reveals that these specimens contain only a few, highly anisotropic Sn grains across the entire joint. For the studied loads, the coarse-grained Sn microstructure has a more significant impact on the scatter in primary creep compared to that in the secondary creep. The observed lack of statistical homogeneity (microstructure) and joint-dependent mechanical behavior of microscale SAC305 joints are consistent with those observed for functional microelectronics interconnects. Compared with SAC305 joints, microscale Sn-37Pb shear specimens exhibit more homogenous behavior and microstructure with a large number of small Sn (and Pb) grains. Creep damage in the Pb-free joint is predominantly concentrated at highly misoriented Sn grain boundaries. The coarse-grained Sn microstructure recrystallizes into new grains with high misorientation angles under creep loading. In spite of the observed joint-dependent behavior, as-fabricated SAC305 is significantly more creep resistant than Sn-37Pb solder and slightly less creep resistant than near-eutectic SAC387 solder. Average model constants for primary and secondary creep of SAC305 are presented. Since the viscoplastic measurements are averaged over a wide range of grain configurations, the creep model constants represent the effective continuum behavior in an average sense. The average secondary creep behavior suggests that the dominant creep mechanism is dislocation climb assisted by dislocation pipe diffusion.

Synthesis of the new quaternary sulfides K[sub 2]Y[sub 4]Sn[sub 2]S[sub 11] and BaLnAgS[sub 3] (Ln = Er, Y, Gd) and the structures of K[sub 2]Y[sub 4]Sn[sub 2]S[sub 11] and BaErAgS[sub 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Ping; Ibers, J.A.

1994-05-01

Several new quarternary sulfides, K[sub 2]Y[sub 4]Sn[sub 2]S[sub 11] and BaLnAgS[sub 3] (Ln = Er, Y, Gd), have been synthesized by the reaction of the constituent binary chalcogenides and elements at 1000[degrees]C. The crystal structures of K[sub 2]Y[sub 4]Sn[sub 2]S[sub 11] and BaErAgS[sub 3] have been determined by single-crystal X-ray diffraction techniques. Crystal data: K[sub 2]Y[sub 4]Sn[sub 2]S[sub 11]-space group D[sup 8][sub 4h] - P4/ncc, M = 1023.88, Z = 4, a = 8.587(1), c = 27.892(4) [angstrom] (T = 115 K), V = 2056.7(4) [angstrom][sup 3], R[sub W](F[sup 2]) = 0.093 for 1965 observations having F[sup 2][sub 0] >more » 2[sigma](F[sup 2][sub 0]); BaEr AgS[sub 3]-space group C[sup 3][sub 2H] - C2/m, M = 508.65, Z = 4, a = 17.340(4), b = 4.014(1), x = 8.509(2) [angstrom], [beta] = 103.23(3)[degrees], (T = 115 K), V = 576.5(2) [angstrom][sup 3], R[sub W](F[sup 2]) = 0.049 for 1404 observations and 48 variables, R(F) = 0.018 for 1299 observations having F[sup 2][sub 0] > 2[sigma](F[sup 2][sub 0]). In both structures, the rare-earth atoms have octahedral coordination and the octahedra form slabs through edge- and corner-sharing. These slabs are separated by K[sup +] Ba[sup 2+] cations, and are crosslinked into three-dimensional frameworks by Sn[sub 2]S[sub 6] units as edge-sharing SnS[sub 4] tetrahedral pairs in K[sub 2]Y[sub 4]Sn[sub 2]S[sub 11], and by Ag[sub 2]S[sub 9] units as corner-sharing trigonal-bipyramidal AgS[sub 5] pairs in BaEr AgS[sub 3]. From their powder diffraction patterns, BaYAgS[sub 3] and Ba GdAgS[sub 3] appear to be isostructural with BaErAgS[sub 3].« less

Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

DOEpatents

Skrabek, Emanuel Andrew; Trimmer, Donald Smith

1976-01-01

Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

High-performance Ti/Sb-SnO(2)/Pb(3)O(4) electrodes for chlorine evolution: preparation and characteristics.

PubMed

Shao, Dan; Yan, Wei; Cao, Lu; Li, Xiaoliang; Xu, Hao

2014-02-28

Chlorine evolution via electrochemical approach has wide application prospects in drinking water disinfection and wastewater treatment fields. Dimensional stable anodes used for chlorine evolution should have high stability and adequate chlorine evolution efficiency. Thus a novel and cost-effective Ti/Sb-SnO(2)/Pb(3)O(4)electrode was developed. The physicochemical and electrochemical properties as well as the chlorine evolution performances of the electrodes were investigated. The electrocatalytic activity and deactivation course of the electrodes were also explored. Results showed that this novel electrode had strong chlorine evolution ability with high current efficiency ranging from 87.3% to 93.4% depending on the operational conditions. The accelerated service life of Ti/Sb-SnO(2)/Pb(3)O(4) electrode could reach 180 h at a current density of 10,000 A m(-2) in 0.5 molL(-1) H(2)SO(4). During the electrolysis process, it was found that the conversion of Pb(3)O(4) into β-PbO(2) happened gradually on the electrode surface, which not only inhibited the leakage of hazardous Pb(2+) ion but also increased the anti-corrosion capacity of the electrode effectively. Copyright © 2014 Elsevier B.V. All rights reserved.

A study on 100 MeV O7+ irradiated SnO2/Ag/SnO2 multilayer as transparent electrode for flat panel display application

NASA Astrophysics Data System (ADS)

Sharma, Vikas; Singh, Satyavir; Asokan, K.; Sachdev, Kanupriya

2016-07-01

The multilayer thin films of SnO2/Ag/SnO2 were deposited using electron-beam and thermal evaporation for flat panel display application. The as-prepared SnO2/Ag/SnO2 specimen was irradiated with 100 MeV O7+ ions by varying the fluences 1 × 1012 and 5 × 1012 ions/cm2. The pristine and irradiated films were investigated using XRD, SEM, AFM and Raman to find out modification in the structure and surface morphology of the films. UV-Vis and Hall measurement techniques were used to investigate the optical and electrical properties respectively. It was observed that the roughness of the film after irradiation (for the fluence of 1 × 1012 ions/cm2) ​ decreased to 0.68 nm from 1.6 nm and showed an increase in roughness to 1.35 nm on increasing the fluence to 5 × 1012 ions/cm2. This oxide/metal/oxide structure fulfills the basic requirements of a TCE, like high-transmittance >75% for pristine and >80% for the fluence of 1 × 1012 ions/cm2 over a broad spectrum of visible light for practical applications. The multilayer structure shows change in the electrical resistivity from 1.6 × 10-3 Ω cm to 6.3 × 10-3 Ω cm after irradiation.

Observation of amorphous to crystalline phase transformation in Te substituted Sn-Sb-Se thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chander, Ravi, E-mail: rcohri@yahoo.com

2015-05-15

Thin films of Sn-Sb-Se-Te (8 ≤ x ≤ 14) chalcogenide system were prepared by thermal evaporation technique using melt quenched bulk samples. The as-prepared thin films were found amorphous as evidenced from X-ray diffraction studies. Resistivity measurement showed an exponential decrease with temperature upto critical temperature (transition temperature) beyond which a sharp decrease was observed and with further increase in temperature showed an exponential decrease in resistivity with different activation energy. The transition temperature showed a decreasing trend with tellurium content in the sample. The resistivity measurement during cooling run showed no abrupt change in resistivity. The resistivity measurements ofmore » annealed films did not show any abrupt change revealing the structural transformation occurring in the material. The transition width showed an increase with tellurium content in the sample. The resistivity ratio showed two order of magnitude improvements for sample with higher tellurium content. The observed transition temperature in this system was found quite less than already commercialized Ge-Sb-Te system for optical and electronic memories.« less

Peculiarities of thermoelectric half-Heusler phase formation in Gd-Ni-Sb and Lu-Ni-Sb ternary systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romaka, V.V., E-mail: romakav@lp.edu.ua; Romaka, L.; Horyn, A.

The phase equilibria in the Gd–Ni–Sb and Lu-Ni-Sb ternary systems were studied at 873 K by X-ray and metallographic analyses in the whole concentration range. The interaction of the elements in the Gd–Ni–Sb system results the formation of five ternary compounds at investigated temperature: Gd{sub 5}Ni{sub 2}Sb (Mo{sub 5}SiB{sub 2}-type), Gd{sub 5}NiSb{sub 2} (Yb{sub 5}Sb{sub 3}-type), GdNiSb (MgAgAs-type), Gd{sub 3}Ni{sub 6}Sb{sub 5} (Y{sub 3}Ni{sub 6}Sb{sub 5}-type), and GdNi{sub 0.72}Sb{sub 2} (HfCuSi{sub 2}-type). At investigated temperature the Lu-Ni-Sb system is characterized by formation of the LuNiSb (MgAgAs-type), Lu{sub 5}Ni{sub 2}Sb (Mo{sub 5}SiB{sub 2}-type), and Lu{sub 5}Ni{sub 0.56}Sb{sub 2.44} (Yb{sub 5}Sb{sub 3}-type)more » compounds. The disordering in the crystal structure of half-Heusler GdNiSb and LuNiSb was revealed by EPMA and studied by means of Rietveld refinement and DFT modeling. The performed electronic structure calculations are in good agreement with electrical transport property studies. - Graphical abstract: Crystal structure model and electron localization function of Lu{sub 5}Ni{sub 2}Sb. Display Omitted - Highlights: • Gd-Ni-Sb and Lu-Ni-Sb phase diagrams were constructed at 873 K. • GdNiSb and LuNiSb are characterized by disordered crystal structure. • Crystal structure optimization with DFT calculations confirmed crystal structure disorder in GdNiSb and LuNiSb.« less

Metal to insulator transition in Sb doped SnO2 monocrystalline nanowires thin films

NASA Astrophysics Data System (ADS)

Costa, I. M.; Bernardo, E. P.; Marangoni, B. S.; Leite, E. R.; Chiquito, A. J.

2016-12-01

We report on the growth and transport properties of single crystalline Sb doped SnO2 wires grown from chemical vapour deposition. While undoped samples presented semiconducting behaviour, doped ones clearly undergo a transition from an insulating state ( d R /d T <0 ) to a metallic one ( d R /d T >0 ) around 130 -150 K depending on the doping level. Data analysis in the framework of the metal-to-insulator transition theories allowed us to investigate the underlying physics: electron-electron and electron-phonon interactions were identified as the scattering mechanisms present in the metallic phase, while the conduction mechanism of the semiconducting phase (undoped sample) was characterized by thermal activation and variable range hopping mechanisms.

R 14 (Au, M) 51 (R = Y, La–Nd, Sm–Tb, Ho, Er, Yb, Lu; M = Al, Ga, Ge, In, Sn, Sb, Bi): Stability Ranges and Site Preference in the Gd 14Ag 51 Structure Type

DOE PAGES

Celania, Chris; Smetana, Volodymyr; Provino, Alessia; ...

2017-12-19

Twenty new ternary representatives of the Gd 14Ag 51 structure type have been synthesized within the R-Au-M family (R = Y, La–Nd, Sm–Tb, Ho, Er, Yb, Lu; M = Al, Ga, Ge, In, Sn, Sb, Bi) using solid state synthesis techniques. The list of post transition metals (M) involved in the formation of this type of structure could be augmented by five new representatives. All compounds crystallize in the hexagonal space group P6/m (#175) with the unit cell ranges of a = 12.3136(2)–12.918(1) Å and c = 8.9967(3)–9.385(1) Å, and incorporate different degrees of Au/M mixing. The involvement of themore » post transition element in the structure varies from one to another compound both qualitatively and quantitatively. A rather significant phase width can be expected for the majority of compounds, however, not without exclusions. The distribution of the post transition metals within the structure has been analyzed via single crystal X-ray diffraction. While the positional disorder of one near-origin Au position is expectable for all compounds due to steric reasons, two specimens show an obvious deviation from the others including another Au position split along the c axis. Lastly, possible factors affecting this behavior are discussed.« less

R 14 (Au, M) 51 (R = Y, La–Nd, Sm–Tb, Ho, Er, Yb, Lu; M = Al, Ga, Ge, In, Sn, Sb, Bi): Stability Ranges and Site Preference in the Gd 14Ag 51 Structure Type

DOE Office of Scientific and Technical Information (OSTI.GOV)

Celania, Chris; Smetana, Volodymyr; Provino, Alessia

Twenty new ternary representatives of the Gd 14Ag 51 structure type have been synthesized within the R-Au-M family (R = Y, La–Nd, Sm–Tb, Ho, Er, Yb, Lu; M = Al, Ga, Ge, In, Sn, Sb, Bi) using solid state synthesis techniques. The list of post transition metals (M) involved in the formation of this type of structure could be augmented by five new representatives. All compounds crystallize in the hexagonal space group P6/m (#175) with the unit cell ranges of a = 12.3136(2)–12.918(1) Å and c = 8.9967(3)–9.385(1) Å, and incorporate different degrees of Au/M mixing. The involvement of themore » post transition element in the structure varies from one to another compound both qualitatively and quantitatively. A rather significant phase width can be expected for the majority of compounds, however, not without exclusions. The distribution of the post transition metals within the structure has been analyzed via single crystal X-ray diffraction. While the positional disorder of one near-origin Au position is expectable for all compounds due to steric reasons, two specimens show an obvious deviation from the others including another Au position split along the c axis. Lastly, possible factors affecting this behavior are discussed.« less

Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

NASA Astrophysics Data System (ADS)

Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

2016-09-01

A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

Charged Defects-Induced Resistive Switching in Sb2Te3 Memristor

NASA Astrophysics Data System (ADS)

Zhang, J. J.; Liu, N.; Sun, H. J.; Yan, P.; Li, Y.; Zhong, S. J.; Xie, S.; Li, R. J.; Miao, X. S.

2016-02-01

Resistive switching (RS) characteristics of Ta/Sb2Te3/Ta and Ag/Sb2Te3/Ta memory devices have been investigated. The I- V curves show the bipolar RS at room temperature. We have demonstrated that the redistribution and migration of charged defects are responsible for the memristive switching. By using Ag electrode instead of Ta, more defects can be created near the Ag/Sb2Te3 interface, which is a feasible method to eliminate the electroforming process.

Effect of Isothermal Aging and Thermal Cycling on Interfacial IMC Growth and Fracture Behavior of SnAgCu/Cu Joints

NASA Astrophysics Data System (ADS)

Li, Xiaoyan; Li, Fenghui; Guo, Fu; Shi, Yaowu

2011-01-01

The growth behavior of interfacial intermetallic compounds (IMCs) of SnAgCu/Cu soldered joints was investigated during the reflow process, isothermal aging, and thermal cycling with a focus on the influence of these parameters on growth kinetics. The SnAgCu/Cu soldered joints were isothermally aged at 125°C, 150°C, and 175°C while the thermal cycling was performed within the temperature ranges from -25°C to 125°C and -40°C to 125°C. It was observed that a Cu6Sn5 layer formed, followed by rapid coarsening at the solder/Cu interface during reflowing. The grain size of the interfacial Cu6Sn5 was found to increase with aging time, and the morphology evolved from scallop-like to needle-like to rod-like and finally to particles. The rod-like Ag3Sn phase was formed on the solder side in front of the previously formed Cu6Sn5 layer. However, when subject to an increase of the aging time, the Cu3Sn phase was formed at the interface of the Cu6Sn5 layer and Cu substrate. The IMC growth rate increased with aging temperature for isothermally aged joints. During thermal cycling, the thickness of the IMC layer was found to increase with the number of thermal cycles, although the growth rate was slower than that for isothermal aging. The dwell time at the high-temperature end of the thermal cycles was found to significantly influence the growth rate of the IMCs. The growth of the IMCs, for both isothermal aging and thermal cycling, was found to be Arrhenius with aging temperature, and the corresponding diffusion factor and activation energy were obtained by data fitting. The tensile strength of the soldered joints decreased with increasing aging time. Consequently, the fracture site of the soldered joints migrated from the solder matrix to the interfacial Cu6Sn5 layer. Finally, the shear strength of the joints was found to decrease with both an increase in the number of thermal cycles and a decrease in the dwell temperature at the low end of the thermal cycle.

SnS2 /Sb2 S3 Heterostructures Anchored on Reduced Graphene Oxide Nanosheets with Superior Rate Capability for Sodium-Ion Batteries.

PubMed

Wang, Shijian; Liu, Shuaishuai; Li, Xuemei; Li, Cong; Zang, Rui; Man, Zengming; Wu, Yuhan; Li, Pengxin; Wang, Guoxiu

2018-03-12

Tin disulfide, as a promising high-capacity anode material for sodium-ion batteries, exhibits high theoretical capacity but poor practical electrochemical properties due to its low electrical conductivity. Constructing heterostructures has been considered to be an effective approach to enhance charge transfer and ion-diffusion kinetics. In this work, composites of SnS 2 /Sb 2 S 3 heterostructures with reduced graphene oxide nanosheets were synthesized by a facile one-pot hydrothermal method. When applied as anode material in sodium-ion batteries, the composite showed a high reversible capacity of 642 mA h g -1 at a current density of 0.2 A g -1 and good cyclic stability without capacity loss in 100 cycles. In particular, SnS 2 /Sb 2 S 3 heterostructures exhibited outstanding rate performance with capacities of 593 and 567 mA h g -1 at high current densities of 2 and 4 A g -1 , respectively, which could be ascribed to the dramatically improved Na + diffusion kinetics and electrical conductivity. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metallurgical characterization of experimental Ag-based soldering alloys.

PubMed

Ntasi, Argyro; Al Jabbari, Youssef S; Silikas, Nick; Al Taweel, Sara M; Zinelis, Spiros

2014-10-01

To characterize microstructure, hardness and thermal properties of experimental Ag-based soldering alloys for dental applications. Ag12Ga (AgGa) and Ag10Ga5Sn (AgGaSn) were fabricated by induction melting. Six samples were prepared for each alloy and microstructure, hardness and their melting range were determined by, scanning electron microscopy, energy dispersive X-ray (EDX) microanalysis, X-ray diffraction (XRD), Vickers hardness testing and differential scanning calorimetry (DSC). Both alloys demonstrated a gross dendritic microstructure while according to XRD results both materials consisted predominately of a Ag-rich face centered cubic phase The hardness of AgGa (61 ± 2) was statistically lower than that of AgGaSn (84 ± 2) while the alloys tested showed similar melting range of 627-762 °C for AgGa and 631-756 °C for AgGaSn. The experimental alloys tested demonstrated similar microstructures and melting ranges. Ga and Sn might be used as alternative to Cu and Zn to modify the selected properties of Ag based soldering alloys.

Electrical characteristics for Sn-Ag-Cu solder bump with Ti/Ni/Cu under-bump metallization after temperature cycling tests

NASA Astrophysics Data System (ADS)

Shih, T. I.; Lin, Y. C.; Duh, J. G.; Hsu, Tom

2006-10-01

Lead-free solder bumps have been widely used in current flip-chip technology (FCT) due to environmental issues. Solder joints after temperature cycling tests were employed to investigate the interfacial reaction between the Ti/Ni/Cu under-bump metallization and Sn-Ag-Cu solders. The interfacial morphology and quantitative analysis of the intermetallic compounds (IMCs) were obtained by electron probe microanalysis (EPMA) and field emission electron probe microanalysis (FE-EPMA). Various types of IMCs such as (Cu1-x,Agx)6Sn5, (Cu1-y,Agy)3Sn, and (Ag1-z,Cuz)3Sn were observed. In addition to conventional I-V measurements by a special sample preparation technique, a scanning electron microscope (SEM) internal probing system was introduced to evaluate the electrical characteristics in the IMCs after various test conditions. The electrical data would be correlated to microstructural evolution due to the interfacial reaction between the solder and under-bump metallurgy (UBM). This study demonstrated the successful employment of an internal nanoprobing approach, which would help further understanding of the electrical behavior within an IMC layer in the solder/UBM assembly.

Infrared Polarizer Fabrication by Imprinting on Sb-Ge-Sn-S Chalcogenide Glass

NASA Astrophysics Data System (ADS)

Yamada, Itsunari; Yamashita, Naoto; Tani, Kunihiko; Einishi, Toshihiko; Saito, Mitsunori; Fukumi, Kouhei; Nishii, Junji

2012-01-01

We fabricated infrared wire-grid polarizers consisting of a 500-nm pitch Al grating on a low toxic chalcogenide glass (Sb-Ge-Sn-S system) using the direct imprinting of subwavelength grating followed by a deposition of Al metal by thermal evaporation. To fabricate the subwavelength grating on a chalcogenide glass more easily, the sharp grating was formed on the mold surface. The fabricated polarizer with Al thickness of 130 nm exhibited a polarization function with a transverse magnetic transmittance greater than 60% in the 5-9 µm wavelength range, and an extinction ratio greater than 20 dB in 3.5-11 µm wavelength range. The extinction ratio of the element with Al wires of 180-nm thickness reached 27 dB at 5.4-µm wavelength. The polarizer can be fabricated at lower costs and simpler fabrication processes compared to conventional infrared polarizers.

Thermal cycling reliability of Cu/SnAg double-bump flip chip assemblies for 100 μm pitch applications

NASA Astrophysics Data System (ADS)

Son, Ho-Young; Kim, Ilho; Lee, Soon-Bok; Jung, Gi-Jo; Park, Byung-Jin; Paik, Kyung-Wook

2009-01-01

A thick Cu column based double-bump flip chip structure is one of the promising alternatives for fine pitch flip chip applications. In this study, the thermal cycling (T/C) reliability of Cu/SnAg double-bump flip chip assemblies was investigated, and the failure mechanism was analyzed through the correlation of T/C test and the finite element analysis (FEA) results. After 1000 thermal cycles, T/C failures occurred at some Cu/SnAg bumps located at the edge and corner of chips. Scanning acoustic microscope analysis and scanning electron microscope observations indicated that the failure site was the Cu column/Si chip interface. It was identified by a FEA where the maximum stress concentration was located during T/C. During T/C, the Al pad between the Si chip and a Cu column bump was displaced due to thermomechanical stress. Based on the low cycle fatigue model, the accumulation of equivalent plastic strain resulted in thermal fatigue deformation of the Cu column bumps and ultimately reduced the thermal cycling lifetime. The maximum equivalent plastic strains of some bumps at the chip edge increased with an increased number of thermal cycles. However, equivalent plastic strains of the inner bumps did not increase regardless of the number of thermal cycles. In addition, the z-directional normal plastic strain ɛ22 was determined to be compressive and was a dominant component causing the plastic deformation of Cu/SnAg double bumps. As the number of thermal cycles increased, normal plastic strains in the perpendicular direction to the Si chip and shear strains were accumulated on the Cu column bumps at the chip edge at low temperature region. Thus it was found that the Al pad at the Si chip/Cu column interface underwent thermal fatigue deformation by compressive normal strain and the contact loss by displacement failure of the Al pad, the main T/C failure mode of the Cu/SnAg flip chip assembly, then occurred at the Si chip/Cu column interface shear strain deformation

A computational assessment of the electronic, thermoelectric, and defect properties of bournonite (CuPbSbS 3) and related substitutions

DOE PAGES

Faghaninia, Alireza; Yu, Guodong; Aydemir, Umut; ...

2017-02-08

Bournonite (CuPbSbS 3) is an earth-abundant mineral with potential thermoelectric applications. This material has a complex crystal structure (space group Pmn2 1 #31) and has previously been measured to exhibit a very low thermal conductivity (κ < 1 W m -1 K -1 at T ≥ 300 K). In this study, we employ high-throughput density functional theory calculations to investigate how the properties of the bournonite crystal structure change with elemental substitutions. Specifically, we compute the stability and electronic properties of 320 structures generated via substitutions {Na-K-Cu-Ag}{Si-Ge-Sn-Pb}{N-P-As-Sb-Bi}{O-S-Se-Te} in the ABCD 3 formula. We perform two types of transport calculations: themore » BoltzTraP model, which has been extensively tested, and a newer AMSET model that we have developed and which incorporates scattering effects. We discuss the differences in the model results, finding qualitative agreement except in the case of degenerate bands. Based on our calculations, we identify p-type CuPbSbSe 3 , CuSnSbSe 3 and CuPbAsSe 3 as potentially promising materials for further investigation. We additionally calculate the defect properties, finding that n-type behavior in bournonite and the selected materials is highly unlikely, and p-type behavior might be enhanced by employing Sb-poor synthesis conditions to prevent the formation of Sb Pb defects. Finally, we discuss the origins of various trends with chemical substitution, including the possible role of stereochemically active lone pair effects in stabilizing the bournonite structure and the effect of cation and anion selection on the calculated band gap.« less

On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokofieva, L. V., E-mail: lprokofieva496@gmail.com; Konstantinov, P. P.; Shabaldin, A. A.

2016-06-15

The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 10{sup 19} cm{sup –3} at 300 K, ismore » obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type A{sup IV}–B{sup VI} materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn{sup 2+} → Sn{sup 4+}. Types of compensating complexes are considered.« less

A Mechanistic Thermal Fatigue Model for SnAgCu Solder Joints

NASA Astrophysics Data System (ADS)

Borgesen, Peter; Wentlent, Luke; Hamasha, Sa'd.; Khasawneh, Saif; Shirazi, Sam; Schmitz, Debora; Alghoul, Thaer; Greene, Chris; Yin, Liang

2018-02-01

The present work offers both a complete, quantitative model and a conservative acceleration factor expression for the life span of SnAgCu solder joints in thermal cycling. A broad range of thermal cycling experiments, conducted over many years, has revealed a series of systematic trends that are not compatible with common damage functions or constitutive relations. Complementary mechanical testing and systematic studies of the evolution of the microstructure and damage have led to a fundamental understanding of the progression of thermal fatigue and failure. A special experiment was developed to allow the effective deconstruction of conventional thermal cycling experiments and the finalization of our model. According to this model, the evolution of damage and failure in thermal cycling is controlled by a continuous recrystallization process which is dominated by the coalescence and rotation of dislocation cell structures continuously added to during the high-temperature dwell. The dominance of this dynamic recrystallization contribution is not consistent with the common assumption of a correlation between the number of cycles to failure and the total work done on the solder joint in question in each cycle. It is, however, consistent with an apparent dependence on the work done during the high-temperature dwell. Importantly, the onset of this recrystallization is delayed by pinning on the Ag3Sn precipitates until these have coarsened sufficiently, leading to a model with two terms where one tends to dominate in service and the other in accelerated thermal cycling tests. Accumulation of damage under realistic service conditions with varying dwell temperatures and times is also addressed.

Facet-Specific Ligand Interactions on Ternary AgSbS 2 Colloidal Quantum Dots

DOE PAGES

Choi, Hyekyoung; Kim, Sungwoo; Luther, Joseph M.; ...

2017-11-07

Silver dimetal chalcogenide (Ag-V-VI 2) ternary quantum dots (QDs) are emerging lead-free materials for optoelectronic devices due to their NIR band gaps, large absorption coefficients, and superior electronic properties. However, thin film-based devices of the ternary QDs still lag behind due to the lack of understanding of the surface chemistry, compared to that of lead chalcogenide QDs even with the same crystal structure. Here in this paper, the surface ligand interactions of AgSbS 2 QDs, synthesized with 1-dodecanethiol used as a stabilizer, are studied. For nonpolar (1 0 0) surfaces, it is suggested that the thiolate ligands are associated withmore » the crystal lattices, thus preventing surface oxidation by protecting sulfur after air-exposure, as confirmed through optical and surface chemical analysis. Otherwise, silver rich (1 1 1) surfaces are passivated by thiolate ligands, allowing ligand exchange processes for the conductive films. This in-depth investigation of the surface chemistry of ternary QDs will prompt the performance enhancement of their optoelectronic devices.« less

Effects of limited cu supply on soldering reactions between SnAgCu and Ni

NASA Astrophysics Data System (ADS)

Ho, C. E.; Lin, Y. W.; Yang, S. C.; Kao, C. R.; Jiang, D. S.

2006-05-01

The volume difference between the various types of solder joints in electronic devices can be enormous. For example, the volume difference between a 760-µm ball grid array solder joint and a 75-µm flip-chip solder joint is as high as 1000 times. Such a big difference in volume produces a pronounced solder volume effect. This volume effect on the soldering reactions between the Sn3AgxCu (x=0.4, 0.5, or 0.6 wt.%) solders and Ni was investigated. Three different sizes of solder spheres (300, 500, and 760 µm in diameter) were soldered onto Ni soldering pads. Both the Cu concentration and the solder volume had a strong effect on the type of the reaction products formed. In addition, (Cu,Ni)6Sn5 massively spalled from the interface under certain conditions, including smaller joints and those with lower Cu concentration. We attributed the massive spalling of (Cu,Ni)6Sn5 to the decrease of the available Cu in the solders. The results of this study suggest that Cu-rich SnAgCu solders can be used to prevent this massive spalling.

Metallurgical characterization of experimental Ag-based soldering alloys

PubMed Central

Ntasi, Argyro; Al Jabbari, Youssef S.; Silikas, Nick; Al Taweel, Sara M.; Zinelis, Spiros

2014-01-01

Aim To characterize microstructure, hardness and thermal properties of experimental Ag-based soldering alloys for dental applications. Materials and methods Ag12Ga (AgGa) and Ag10Ga5Sn (AgGaSn) were fabricated by induction melting. Six samples were prepared for each alloy and microstructure, hardness and their melting range were determined by, scanning electron microscopy, energy dispersive X-ray (EDX) microanalysis, X-ray diffraction (XRD), Vickers hardness testing and differential scanning calorimetry (DSC). Results Both alloys demonstrated a gross dendritic microstructure while according to XRD results both materials consisted predominately of a Ag-rich face centered cubic phase The hardness of AgGa (61 ± 2) was statistically lower than that of AgGaSn (84 ± 2) while the alloys tested showed similar melting range of 627–762 °C for AgGa and 631–756 °C for AgGaSn. Conclusion The experimental alloys tested demonstrated similar microstructures and melting ranges. Ga and Sn might be used as alternative to Cu and Zn to modify the selected properties of Ag based soldering alloys. PMID:25382945

Effect of visible light on the optical properties of a-(Ge2Sb2Te5)90Ag10 thin film

NASA Astrophysics Data System (ADS)

Singh, Palwinder; Thakur, Anup

2018-05-01

(Ge2Sb2Te5)90Ag10 (GST-Ag) bulk alloy was prepared using melt quenching technique. GST-Ag thin film was deposited on glass substrate using thermal evaporation method. The prepared thin films were exposed to visible light (intensity of 105 Lux for 2, 8, 20 and 30 hours) using 25W LED lamp. Transmission spectra were taken using UV-vis-NIR spectrophotometer in the wavelength range 800-3200 nm. Optical band gap of as-deposited and light exposed thin films was determined using Tauc's plot. Optical band gap was found to be decreasing on light exposure upto 8 hours and after that no significant change was observed.

Subgrain Rotation Behavior in Sn3.0Ag0.5Cu-Sn37Pb Solder Joints During Thermal Shock

NASA Astrophysics Data System (ADS)

Han, Jing; Tan, Shihai; Guo, Fu

2018-01-01

Ball grid array (BGA) samples were soldered on a printed circuit board with Sn37Pb solder paste to investigate the recrystallization induced by subgrain rotation during thermal shock. The composition of the solder balls was Sn3.0Ag0.5Cu-Sn37Pb, which comprised mixed solder joints. The BGA component was cross-sectioned before thermal shock. The microstructure and grain orientations were obtained by a scanning electron microscope equipped with an electron back-scattered diffraction system. Two mixed solder joints at corners of the BGA component were selected as the subjects. The results showed that recrystallization occurred at the corner of the solder joints after 200 thermal shock cycles. The recrystallized subgrains had various new grain orientations. The newly generated grain orientations were closely related to the initial grain orientations, which indicated that different subgrain rotation behaviors could occur in one mixed solder joint with the same initial grain orientation. When the misorientation angles were very small, the rotation axes were about Sn [100], [010] and [001], as shown by analyzing the misorientation angles and subgrain rotation axes, while the subgrain rotation behavior with large misorientation angles in the solder joints was much more complicated. As Pb was contained in the solder joints and the stress was concentrated on the corner of the mixed solder joints, concaves and cracks were formed. When the adjacent recrystallized subgrains were separated, and the process of the continuous recrystallization was limited.

Effect of the Silver Content of SnAgCu Solder on the Interfacial Reaction and on the Reliability of Angle Joints Fabricated by Laser-Jet Soldering

NASA Astrophysics Data System (ADS)

Ji, Hongjun; Ma, Yuyou; Li, Mingyu; Wang, Chunqing

2015-02-01

The silver content of lead-free solders affects their microstructure, the interfacial reaction, and the performance of the joints in reliability tests. In this study, Sn3.0Ag0.5Cu (wt.%, SAC305) and Sn1.0Ag0.5Cu (wt.%, SAC105) solder balls of diameter 55 μm were reflowed on gold surface pads by laser-jet soldering. It was found that four types of layered intermetallic compound (IMC) were formed at the interfaces; these were Au5Sn/AuSn, AuSn, AuSn2, and AuSn4 from the pad side to the solder matrix. The Au5Sn/AuSn eutectic region, thickness 400 nm, formed because of the high cooling rate induced by the laser-jet soldering. During high-temperature storage tests, the silver became segregated at the interfaces between the Au-Sn IMC and the solder matrix, resulting in inhibition of IMC growth in SAC305 joints, the shear strengths of which were higher than those of SAC105 joints. In mechanical drop tests, however, percentage failure of the SAC305 joints was twice that of the SAC105 joints.

Thermal fuse for high-temperature batteries

DOEpatents

Jungst, Rudolph G.; Armijo, James R.; Frear, Darrel R.

2000-01-01

A thermal fuse, preferably for a high-temperature battery, comprising leads and a body therebetween having a melting point between approximately 400.degree. C. and 500.degree. C. The body is preferably an alloy of Ag--Mg, Ag--Sb, Al--Ge, Au--In, Bi--Te, Cd--Sb, Cu--Mg, In--Sb, Mg--Pb, Pb--Pd, Sb--Zn, Sn--Te, or Mg--Al.

Multielemental Determination of As, Bi, Ge, Sb, and Sn in Agricultural Samples Using Hydride Generation Coupled to Microwave-Induced Plasma Optical Emission Spectrometry.

PubMed

Machado, Raquel C; Amaral, Clarice D B; Nóbrega, Joaquim A; Araujo Nogueira, Ana Rita

2017-06-14

A microwave-induced plasma optical emission spectrometer with N 2 -based plasma was combined with a multimode sample introduction system (MSIS) for hydride generation (HG) and multielemental determination of As, Bi, Ge, Sb, and Sn in samples of forage, bovine liver, powdered milk, agricultural gypsum, rice, and mineral fertilizer, using a single condition of prereduction and reduction. The accuracy of the developed analytical method was evaluated using certified reference materials of water and mineral fertilizer, and recoveries ranged from 95 to 106%. Addition and recovery experiments were carried out, and the recoveries varied from 85 to 117% for all samples evaluated. The limits of detection for As, Bi, Ge, Sb, and Sn were 0.46, 0.09, 0.19, 0.46, and 5.2 μg/L, respectively, for liquid samples, and 0.18, 0.04, 0.08, 0.19, and 2.1 mg/kg, respectively, for solid samples. The method proposed offers a simple, fast, multielemental, and robust alternative for successful determination of all five analytes in agricultural samples with low operational cost without compromising analytical performance.

First-principles study lone-pair effects of Sb (III)-S chromophore influence on SHG response in quaternary potassium containing silver antimony sulfides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Junben; School of Physics Science and Technology, Xinjiang University, Urumqi 830046; Su, Xin

2017-05-15

First-principles studies of the geometric structures, electronic structures and optical properties of non-centrosymmetrical (NCS) KAg{sub 2}SbS{sub 4}, K{sub 2}AgSbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} and centrosymmetrical (CS) KAg{sub 2}SbS{sub 3} and K{sub 3}Ag{sub 9}Sb{sub 4}S{sub 12} have been performed by means of density functional theory. It is indicated that although they have similarity in their anionic groups and, the electronic structures, prominent features of the optical anisotropy or second-order nonlinear optical (NLO) susceptibilities are apparently different. The calculated birefringences are 0.0537, 0.0343, 0.1324, 0.2217 and 0.0604 which are attributed to the different anionic groups [SbS{sub 3}] and trianglesmore » [AgS{sub 3}]. Also, the calculated NLO responses are about 0.5×, 1.0× and 2.0× times than that commercial AgGaS{sub 2} (AGS, d{sub 36}=11 pm/V) for K{sub 2}AgSbS{sub 4}, KAg{sub 2}SbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7}, respectively. In comparison with the absolute magnitude of second harmonic generation (SHG) coefficients, the order K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7}>KAg{sub 2}SbS{sub 4}>K{sub 2}AgSbS{sub 4} is clearly established in the SHG response. Further analysis based on the real-space atom-cutting method reveals that the main sources of the SHG properties of these compounds are from the Sb-S group, especially K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} is mainly attributed to the lone pair stereochemical activity of Sb (III)-S group. - Graphical abstract: Compounds K{sub 2}AgSbS{sub 4}, KAg{sub 2}SbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} exhibit second-order NLO response: 15×, 30× and 62× times than that KDP (KH{sub 2}PO{sub 4}, d{sub 36}=0.39 pm/V), respectively. First-principles methods reveal that the large SHG response of K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} is dominated by the Sb-S chromophore with lone pairs.« less

Efficient planar Sb2S3 solar cells using a low-temperature solution-processed tin oxide electron conductor.

PubMed

Lei, Hongwei; Yang, Guang; Guo, Yaxiong; Xiong, Liangbin; Qin, Pingli; Dai, Xin; Zheng, Xiaolu; Ke, Weijun; Tao, Hong; Chen, Zhao; Li, Borui; Fang, Guojia

2016-06-28

Efficient planar antimony sulfide (Sb2S3) heterojunction solar cells have been made using chemical bath deposited (CBD) Sb2S3 as the absorber, low-temperature solution-processed tin oxide (SnO2) as the electron conductor and poly (3-hexylthiophene) (P3HT) as the hole conductor. A solar conversion efficiency of 2.8% was obtained at 1 sun illumination using a planar device consisting of F-doped SnO2 substrate/SnO2/CBD-Sb2S3/P3HT/Au, whereas the solar cells based on a titanium dioxide (TiO2) electron conductor exhibited a power conversion efficiency of 1.9%. Compared with conventional Sb2S3 sensitized solar cells, the high-temperature processed mesoscopic TiO2 scaffold is no longer needed. More importantly, a low-temperature solution-processed SnO2 layer was introduced for electron transportation to substitute the high-temperature sintered dense blocking TiO2 layer. Our planar solar cells not only have simple geometry with fewer steps to fabricate but also show enhanced performance. The higher efficiency of planar Sb2S3 solar cell devices based on a SnO2 electron conductor is attributed to their high transparency, uniform surface, efficient electron transport properties of SnO2, suitable energy band alignment, and reduced recombination at the interface of SnO2/Sb2S3.

Distribution of impurity states and charge transport in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yuanfeng; Makongo, Julien P.A.; Page, Alexander

Energy filtering of charge carriers in a semiconducting matrix using atomically coherent nanostructures can lead to a significant improvement of the thermoelectric figure of merit of the resulting composite. In this work, several half-Heusler/full-Heusler (HH/FH) nanocomposites with general compositions Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (0≤x≤0.15 and y=0.005, 0.01 and 0.025) were synthesized in order to investigate the behavior of extrinsic carriers at the HH/FH interfaces. Electronic transport data showed that energy filtering of carriers at the HH/FH interfaces in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} samples strongly depends on the doping level (y value) as well as the energymore » levels occupied by impurity states in the samples. For example, it was found that carrier filtering at HH/FH interfaces is negligible in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (y=0.01 and 0.025) composites where donor states originating from Sb dopant dominate electronic conduction. However, we observed a drastic decrease in the effective carrier density upon introduction of HH/FH interfaces for the mechanically alloyed Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 0.995}Sb{sub 0.005} samples where donor states from unintentional Fe impurities contribute the largest fraction of conduction electrons. This work demonstrates the ability to synergistically integrate the concepts of doping and energy filtering through nanostructuring for the optimization of electronic transport in semiconductors. - Graphical abstract: Electronic transport in semiconducting half-Heusler (HH) matrices containing full-Heusler (FH) nanoinclusions strongly depends on the energy distribution of impurity states within the HH matrix with respect to the magnitude of the potential energy barrier at the HH/FH interfaces. - Highlights: • Coherent nanostructures enhanced thermoelectric behavior of half-Heusler alloys. • Nanostructures act as energy

Interaction of intermetallic compound formation in Cu/SnAgCu/NiAu sandwich solder joints

NASA Astrophysics Data System (ADS)

Xia, Yanghua; Lu, Chuanyan; Chang, Junling; Xie, Xiaoming

2006-05-01

The interaction between Cu/solder interface and solder/Ni interface at a Cu/SnAgCu/NiAu sandwich solder joint with various surface finishes and solder heights was investigated. The interfacial microstructure and composition of intermetallic compounds (IMCs) were characterized by a scanning electron microscope (SEM) equipped with energy-dispersive x-ray spectroscopy (EDX). The phase structure of IMC was identified by x-ray diffraction (XRD). It is found that ternary (Cu,Ni)6Sn5 IMCs form at both interfaces. The composition, thickness, and morphology of the ternary IMCs depend not only on the interface itself, but also on the opposite interface. That is to say, strong coupling effects exist between the two interfaces. Lattice parameters of (Cu,Ni)6Sn5 shrink with increasing Ni content, in agreement with Vegard’s law. The mechanism of ternary IMC formation and interface coupling effects are discussed in this paper.

Geology, S-Pb isotopes, and 40Ar/39Ar geochronology of the Zhaxikang Sb-Pb-Zn-Ag deposit in Southern Tibet: implications for multiple mineralization events at Zhaxikang

NASA Astrophysics Data System (ADS)

Sun, Xiang; Zheng, Youye; Pirajno, Franco; McCuaig, T. Campbell; Yu, Miao; Xia, Shenlan; Song, Qingjie; Chang, Huifang

2018-03-01

Several Au, Sb, Sb-Au, Pb-Zn, and Sb-Pb-Zn-Ag deposits are present throughout the North Himalaya in southern Tibet, China. The largest Sb-Pb-Zn-Ag deposit is Zhaxikang (18 Mt at 0.6 wt% Sb, 2.0 wt% Pb, 3.5 wt% Zn, and 78 g/t Ag). Zhaxikang veins are hosted within N-S trending faults, which crosscut the Early-Middle Jurassic Ridang Formation consisting of shale interbedded with sandstone and limestone deposited on a passive continental margin. Ore paragenesis indicates that Zhaxikang mineralization occurred in two main phases composed of six total stages. The initial phase was characterized by assemblages of fine-grained Mn-Fe carbonate + arsenopyrite + pyrite + sphalerite (stage 1), followed by relatively coarse-grained Mn-Fe carbonate + Fe-rich sphalerite + galena + pyrite (stage 2). The second phase was marked by assemblages of quartz + pyrite + Fe-poor sphalerite and Ag-rich galena + tetrahedrite + sericite (stage 3), quartz + Sb-Pb sulfosalt minerals mainly composed of boulangerite and jamesonite (stage 4), quartz + stibnite ± cinnabar (stage 5), and quartz ± calcite (stage 6). Sulfides of stage 2 have δ34SV-CDT of 8.4-12.0‰, 206Pb/204Pb ratios of 19.648 to 19.659, 207Pb/204Pb ratios of 15.788 to 15.812, and 208Pb/204Pb ratios of 40.035 to 40.153. Sulfides of stage 3 have similar δ34SV-CDT of 6.1-11.2‰ and relatively more radiogenic lead isotopes (206Pb/204Pb = 19.683-19.792). Stage 4 Sb-Pb sulfosalt minerals have δ34SV-CDT of 5.0-7.2‰ and even more radiogenic lead (206Pb/204Pb = 19.811-19.981). By contrast, stibnite of stage 5 has δ34SV-CDT of 4.5-7.8‰ and less radiogenic lead (206Pb/204Pb = 18.880-18.974). Taken together with the geological observations that the Pb-Zn-bearing Mn-Fe carbonate veins were crosscut by various types of quartz veins, sphalerite and galena of stage 2 underwent dissolution and remobilization, and that Sb-Pb(-Fe) sulfosalts formed at the expense of Pb from stage 2 galena and of Fe from stage 2 sphalerite, we argue that

New Element Organic Frameworks Based on Sn, Sb, and Bi, with Permanent Porosity and High Catalytic Activity

PubMed Central

Fritsch, Julia; Rose, Marcus; Wollmann, Philipp; Böhlmann, Winfried; Kaskel, Stefan

2010-01-01

We present new element organic frameworks based on Sn, Sb and Bi atoms connected via organic linkers by element-carbon bonds. The open frameworks are characterized by specific surface areas (BET) of up to 445 m2 g-1 and a good stability under ambient conditions resulting from a highly hydrophobic inner surface. They show good performance as heterogeneous catalysts in the cyanosylilation of benzaldehyde as a test reaction. Due to their catalytic activity, this class of materials might be able to replace common homogeneous element-organic and often highly toxic catalysts especially in the food industry.

Nanocomposite SAC Solders: The Effect of Adding Ni and Ni-Sn Nanoparticles on Morphology and Mechanical Properties of Sn-3.0Ag-0.5Cu Solders

NASA Astrophysics Data System (ADS)

Yakymovych, A.; Švec, P.; Orovcik, L.; Bajana, O.; Ipser, H.

2018-01-01

This study investigates the effect of minor additions of Ni, Ni3Sn or Ni3Sn2 nanoparticles on the microstructure and mechanical properties of Cu/solder/Cu joints. The nanocomposite Sn-3.0Ag-0.5Cu (SAC305) solders with 0.5, 1.0 and 2.0 wt.% metallic nanoparticles were prepared through a paste mixing method. The employed Ni and Ni-Sn nanoparticles were produced via a chemical reduction method. The microstructure of as-solidified Cu/solder/Cu joints was studied by x-ray diffraction and scanning electron microscopy. The results showed that additions of Ni and Ni-Sn nanoparticles to the SAC305 solder paste lead initially to a decrease in the average thickness of the intermetallic compound layer in the interface between solder and substrate, while further additions up to 2.0 wt.% did not induce any significant changes. In addition, shear strength and microhardness tests were performed to investigate the relationship between microstructure and mechanical properties of the investigated solder joints. The results indicated an increase in both of these properties which was most significant for the solder joints using SAC305 with 0.5 wt.% Ni or Ni-Sn nanoparticles.

Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te 125 NMR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, J.; Levin, E. M.; Lee, Y.

We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge 50 Te 50, Ag 2 Ge 48Te 50 , and Sb 2 Ge 48 Te 50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T 1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band ismore » separated from the Fermi level by an energy gap of E g/k B ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te 125 NMR

DOE PAGES

Cui, J.; Levin, E. M.; Lee, Y.; ...

2016-08-18

We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge 50 Te 50, Ag 2 Ge 48Te 50 , and Sb 2 Ge 48 Te 50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T 1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band ismore » separated from the Fermi level by an energy gap of E g/k B ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

Epitaxial growth of highly strained antimonene on Ag(111)

NASA Astrophysics Data System (ADS)

Mao, Ya-Hui; Zhang, Li-Fu; Wang, Hui-Li; Shan, Huan; Zhai, Xiao-Fang; Hu, Zhen-Peng; Zhao, Ai-Di; Wang, Bing

2018-06-01

The synthesis of antimonene, which is a promising group-V 2D material for both fundamental studies and technological applications, remains highly challenging. Thus far, it has been synthesized only by exfoliation or growth on a few substrates. In this study, we show that thin layers of antimonene can be grown on Ag(111) by molecular beam epitaxy. High-resolution scanning tunneling microscopy combined with theoretical calculations revealed that the submonolayer Sb deposited on a Ag(111) surface forms a layer of AgSb2 surface alloy upon annealing. Further deposition of Sb on the AgSb2 surface alloy causes an epitaxial layer of Sb to form, which is identified as antimonene with a buckled honeycomb structure. More interestingly, the lattice constant of the epitaxial antimonene (5 Å) is much larger than that of freestanding antimonene, indicating a high tensile strain of more than 20%. This kind of large strain is expected to make the antimonene a highly promising candidate for roomtemperature quantum spin Hall material.

Aging Effects on Microstructure and Creep in Sn-3.8Ag-0.7Cu Solder

DTIC Science & Technology

2007-09-01

demonstrated that the primary creep data for ball joints can be fitted well to exponential law. Fit parameters for the tests accomplished at 250C...MICROSTRUCTURE AND CREEP IN Sn-3.8Ag-0.7Cu SOLDER by Orlando Cornejo September 2007 Thesis Advisor: Indranath Dutta THIS PAGE...collection of information, including suggestions for reducing this burden, to Washington headquarters Services , Directorate for Information

Sn-doped Bi 1.1Sb 0.9Te 2S bulk crystal topological insulator with excellent properties

DOE PAGES

S. K. Kushwaha; Pletikosic, I.; Liang, T.; ...

2016-04-27

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1Sb 0.9Te 2S grown by the Vertical Bridgeman method.more » We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.« less

Refinement of the β-Sn Grains in Ni-Doped Sn-3.0Ag-0.5Cu Solder Joints with Cu-Based and Ni-Based Substrates

NASA Astrophysics Data System (ADS)

Chou, Tzu-Ting; Chen, Wei-Yu; Fleshman, Collin Jordon; Duh, Jenq-Gong

2018-03-01

A fine-grain structure with random orientations of lead-free solder joints was successfully obtained in this study. The Sn-Ag-Cu solder alloys doped with minor Ni were reflowed with Ni-based or Cu-based substrates to fabricate the joints containing different Ni content. Adding 0.1 wt.% Ni into the solder effectively promoted the formation of fine Sn grains, and reflowing with Ni-based substrates further enhanced the effects of β-Sn grain refinement. The crystallographic characteristics and the microstructures were analyzed to identify the solidification mechanism of different types of microstructure in the joints. The phase precipitating order in the joint altered as the solder composition were modified by elemental doping and changing substrate, which significantly affected the efficiency of grain refinement and the final grain structure. The formation mechanism of fine β-Sn grains in the Ni-doped joint with a Ni-based substrate is attributable to the heterogeneous nucleation by Ni, whereas the Ni in the joint using ChouCu-based substrate is consumed to form an intermetallic compound and thus retard the effect of grain refining.

Study of the effects of MeV Ag, Cu, Au, and Sn implantation on the optical properties of LiNbO3

NASA Technical Reports Server (NTRS)

Williams, E. K.; Ila, D.; Sarkisov, S.; Curley, M.; Poker, D. B.; Hensley, D. K.; Borel, C.

1998-01-01

The authors present the results of characterization of linear absorption and nonlinear refractive index of Au, Ag, Cu and Sn ion implantation into LiNbO3. Ag was implanted at 1.5 MeV to fluences of 2 to 17 x 17(exp 16)/sq cm at room temperature. Au and Cu were implanted to fluences of 5 to 20 x 10(exp 16)/sq cm at an energy of 2.0 MeV. Sn was implanted to a fluence of 1.6 x 10(exp 17)/sq cm at 160 kV. Optical absorption spectrometry indicated an absorption peak for the Au implanted samples after heat treatment at 1,000 C at approx. 620 nm. The Ag implanted samples absorption peaks shifted from approx. 450 nm before heat treatment to 550 nm after 500 C for 1h. Heat treatment at 800 C returned the Ag implanted crystals to a clear state. Cu nanocluster absorption peaks disappears at 500 C. No Sn clusters were observed by optical absorption or XRD. The size of the Ag and Au clusters as a function of heat treatment were determined from the absorption peaks. The Ag clusters did not change appreciably in size with heat treatment. The Au clusters increased from 3 to 9 nm diameter upon heat treatment at 1000 C. TEM analysis performed on a Au implanted crystal indicated the formation of Au nanocrystals with facets normal to the c-axis. Measurements of the nonlinear refractive indices were carried out using the Z-scan method with a tunable dye laser pumped by a frequency doubled mode-locked Nd:YAG laser. The dye laser had a 4.5 ps pulse duration time and 76 MHz pulse repetition rate (575 nm).

Preparation, characterization, and application of Ti/TiO2-NTs/Sb-SnO2 electrode in photo-electrochemical treatment of industrial effluents under mild conditions.

PubMed

Subba Rao, Anantha N; Venkatarangaiah, Venkatesha T

2018-04-01

Ti/TiO 2 -NTs/Sb-SnO 2 electrode was prepared by gradient pulsed electrodeposition, and its electrochemical properties were evaluated. The catalytic activity and reusability of the electrode were tested by electrochemical oxidation (EO) and photoelectrochemical oxidation (PEO) of organics present in textile industry wastewater (TWW) and coffee bean processing industry wastewater (CWW). COD removal of ~ 41% was achieved after 5-h electrolysis under a constant applied current density of 30 mA cm -2 for TWW and 50 mA cm -2 for CWW. Nearly 14 and 18% increment in COD removal was observed under PEO for TWW and CWW, respectively. The turbidity of TWW reduced from 15 to ~ 3 NTU and the turbidity of CWW reduced from 27 to ~ 3 NTU by both EO and PEO. The % COD removal observed after 5-h electrolysis remained consistent for 7 repeated cycles; however, the catalytic activity of the electrode reduced gradually. These results suggested that the Ti/TiO 2 -NTs/Sb-SnO 2 can be a potential electrode for the treatment of industrial wastewater.

Enhanced current-perpendicular-to-plane giant magnetoresistance effect in half-metallic NiMnSb based nanojunctions with multiple Ag spacers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Zhenchao; Yamamoto, Tatsuya; Kubota, Takahide

2016-06-06

Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) heterostructure devices using half-metallic NiMnSb Heusler alloy electrodes with single, dual, and triple Ag spacers were fabricated. The NiMnSb alloy films and Ag spacers show (001) epitaxial growth in all CPP-GMR multilayer structures. The dual-spacer CPP-GMR nanojunction exhibited an enhanced CPP-GMR ratio of 11% (a change in the resistance-area product, ΔRA, of 3.9 mΩ μm{sup 2}) at room temperature, which is approximately twice (thrice) of 6% (1.3 mΩ μm{sup 2}) in the single-spacer device. The enhancement of the CPP-GMR effects in the dual-spacer devices could be attributed to improved interfacial spin asymmetry. Moreover, it was observedmore » that the CPP-GMR ratios increased monotonically as the temperatures decreased. At 4.2 K, a CPP-GMR ratio of 41% (ΔRA = 10.5 mΩ μm{sup 2}) was achieved in the dual-spacer CPP-GMR device. This work indicates that multispacer structures provide an efficient enhancement of CPP-GMR effects in half-metallic material-based CPP-GMR systems.« less

Investigation of spin-dependent transports and microstructure in NiMnSb-based magnetoresistive devices

NASA Astrophysics Data System (ADS)

Qu, Guanxiong; Cheng, P.-H.; Du, Ye; Sakuraba, Yuya; Kasai, Shinya; Hono, Kazuhiro

2017-11-01

We have fabricated fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices using C1b-half Heusler compound NiMnSb, the first candidate of the half-metallic material, as the electrode with a Ag spacer. The device shows magnetoresistance ratios of 25% at 4.2 K and 9.6% at 290 K, which are one of the highest values for the CPP-GMR with half-Heusler compounds. However, these values are much lower compared to those reported for CPP-GMR devices with L21-full Heusler compounds. Careful analysis of the microstructure using scanning transmission electron microscopy and energy dispersive spectroscopy through the upper NiMnSb/Ag interface indicates the heterogeneous formation of Ag-rich solid solution or the island growth of Ag on top of NiMnSb, which clarified a difficulty in evaluating an intrinsic spin-polarization in NiMnSb from CPP-GMR devices. Thus, to evaluate a spin-polarization of a NiMnSb thin film, we fabricated non-local spin valve (NLSV) devices using NiMnSb with Cu channel wires, which is free from the diffusion of Cu to NiMnSb because of no annealing proccess after deposition of Cu. Finally, intrinsic spin polarization of the NiMnSb single layer was extrapolated to be around 50% from NLSV, suggesting a difficulty in obtaining half-metallic nature in the NiMnSb epitaxial thin film.

Enhancement of Sn-Bi-Ag Solder Joints with ENEPIG Surface Finish for Low-Temperature Interconnection

NASA Astrophysics Data System (ADS)

Pun, Kelvin P. L.; Islam, M. N.; Rotanson, Jason; Cheung, Chee-wah; Chan, Alan H. S.

2018-05-01

Low-temperature soldering constitutes a promising solution in interconnect technology with the increasing trend of heat-sensitive materials in integrated circuit packaging. Experimental work was carried out to investigate the effect of electroless Ni/electroless Pd/immersion gold (ENEPIG) layer thicknesses on Sn-Bi-Ag solder joint integrity during extended reflow at peak temperatures as low as 175°C. Optimizations are proposed to obtain reliable solder joints through analysis of interfacial microstructure with the resulting joint integrity under extended reflow time. A thin Ni(P) layer with thin Pd led to diffusion of Cu onto the interface resulting in Ni3Sn4 intermetallic compound (IMC) spalling with the formation of thin interfacial (Ni,Cu)3Sn4 IMCs which enhance the robustness of the solder after extended reflow, while thick Ni(P) with thin Pd resulted in weakened solder joints with reflow time due to thick interfacial Ni3Sn4 IMCs with the entrapped brittle Bi-phase. With a suitable thin Ni(P), the Pd thickness has to be optimized to prevent excessive Ni-P consumption and early Cu outward diffusion to enhance the solder joint during extended reflow. Based on these findings, suitable Ni(P) and Pd thicknesses of ENEPIG are recommended for the formation of robust low-temperature solder joints.

Old friends in a new light: “SnSb” revisited

NASA Astrophysics Data System (ADS)

Norén, Lasse; Withers, Ray L.; Schmid, Siegbert; Brink, Frank J.; Ting, Valeska

2006-02-01

The binary pnictide 'SnSb' has been re-investigated using a combination of X-ray, synchrotron and electron diffraction as well as electron microprobe analysis. Its structure was found to be incommensurately modulated with an underlying rhombohedral parent structure of space group symmetry R3¯m (No. 166), unit cell parameters a=b=4.3251(4) Å, c=5.3376(6) Å in the hexagonal setting. The incommensurate primary modulation wave vector q=1.3109(9)ch* and the superspace group symmetry is R3¯m (0, 0, ˜1.311) (No. 166.1). The refinement of the incommensurate structure indicates that the satellite reflections arise from displacive shifts of presumably essentially pure Sn and Sb layers along the hexagonal c-axis, with increasing distance between the Sn-layers and decreasing distance between the Sb layers.

Isothermal Ageing of SnAgCu Solder Alloys: Three-Dimensional Morphometry Analysis of Microstructural Evolution and Its Effects on Mechanical Response

NASA Astrophysics Data System (ADS)

Maleki, Milad; Cugnoni, Joë; Botsis, John

2014-04-01

Due to the high homologous temperature and fast cooling rates, the microstructures of SnAgCu (SAC) solders are in a meta-stable state in most applications, which is the cause of significant microstructural evolution and continuous variation in the mechanical behavior of the joints during service. The link between microstructures evolution and deformation behavior of Sn-4.0Ag-0.5Cu solder during isothermal ageing is investigated. The evolution of the microstructures in SAC solders are visualized at different scales in 3D by using a combination of synchrotron x-ray and focused ion beam/scanning electron microscopy tomography techniques at different states of ageing. The results show that, although the grain structure, morphology of dendrites, and overall volume fraction of intermetallics remain almost constant during ageing, considerable coarsening occurs in the Ag3Sn and Cu6Sn5 phases to lower the interfacial energy. The change in the morphometrics of sub-micron intermetallics is quantified by 3D statistical analyses and the kinetic of coarsening is discussed. The mechanical behavior of SAC solders is experimentally measured and shows a continuous reduction in the yield resistance of solder during ageing. For comparison, the mechanical properties and grain structure of β-tin are evaluated at different annealing conditions. Finally, the strengthening effect due to the intermetallics at different ageing states is evaluated by comparing the deformation behaviors of SAC solder and β-tin with similar grain size and composition. The relationship between the morphology and the strengthening effect due to intermetallics particles is discussed and the causes for the strength degradation in SAC solder during ageing are identified.

Zwitterion-functionalized polymer microspheres as a sorbent for solid phase extraction of trace levels of V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) prior to their determination by ICP-MS.

PubMed

Jia, Xiaoyu; Gong, Dirong; Zhao, Junyi; Ren, Hongyun; Wang, Jiani; Zhang, Xian

2018-03-19

This paper describes the preparation of zwitterion-functionalized polymer microspheres (ZPMs) and their application to simultaneous enrichment of V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) from environmental water samples. The ZPMs were prepared by emulsion copolymerization of ethyl methacrylate, 2-diethylaminoethyl methacrylate and triethylene glycol dimethyl acrylate followed by modification with 1,3-propanesultone. The components were analyzed by elemental analyses as well as Fourier transform infrared spectroscopy, and the structures were characterized by scanning electron microscopy and transmission electron microscopy. The ZPMs were packed into a mini-column for on-line solid-phase extraction (SPE) of the above metal ions. Following extraction with 40 mM NH 4 NO 3 and 0.5 M HNO 3 solution, the ions were quantified by ICP-MS. Under the optimized conditions, the enrichment factors (from a 40 mL sample) are up to 60 for the ions V(V), As(III), Sb(III) and Hg(II), and 55 for Cr(III) and Sn(IV). The detection limits are 1.2, 3.4, 1.0, 3.7, 2.1 and 1.6 ng L -1 for V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II), respectively, and the relative standard deviations (RSDs) are below 5.2%. The feasibility and accuracy of the method were validated by successfully analyzing six certified reference materials as well as lake, well and river waters. Graphical abstract Zwitterion-functionalized polymer microspheres (ZPMs) were prepared and packed into a mini-column for on-line solid-phase extraction (SPE) via pump 1. Then V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) ions in environmental waters were eluted and submitted to ICP-MS via pump 2.

Experimental formation of Pb, Sn, Ge and Sb sulfides, selenides and chlorides in the presence of sal ammoniac: A contribution to the understanding of the mineral formation processes in coal wastes self-burning

NASA Astrophysics Data System (ADS)

Laufek, František; Veselovsky, František; Drábek, Milan; Kříbek, Bohdan; Klementová, Mariana

2017-04-01

The formation of sulfides, selenides and chlorides was experimentally studied at 800 or 900°C in the presence of sal ammoniac in a sealed silica glass tube. Synthetic PbS, PbSe, SnS, GeS, SnGeS2, PbSnS3, SnS and Sb2S3 or natural uraninite were used as a starting charge. Depending on the chemical composition of the sulfide/selenide charge, galena, unnamed SnGeS3 phase, herzenbergite, berndite, ottenmannite, stibnite and unnamed SnSb2S4 and Sn2Sb3S6 phases were identified in sublimates, together with cotunnite and an unnamed (NH4)2SnCl6 phase. When natural uraninite in a mixture with sal ammoniac was used as a charge, the reaction product comprised abundant cotunnite and minor challacolloite due to volatilization of radiogenic lead. When sulfur was introduced to the charge with uraninite and sal ammoniac, galena was found in reaction products. The results of our experiments revealed that if sulfide or selenide phases and NH4Cl are placed in a thermal gradient, it is possible to accelerate their mobility through a process of hydrogen chloride vapor transport. Within the transport process, new solid products are either isochemical or non-isochemical. The isochemical composition of resulting phases with charge probably represents simple sublimation of the original solid phase in form of self-vapor. The non-isochemical phases are probably formed due to combination of sublimation and condensation of various gas components including gaseous HCl. The valency change of metals (e.g. Sn2+ to Sn3+) in several reaction products indicates redox reactions in the gas mixture or during the solidification of resulting products. The role of ammoniac is not clear; however, formation of unnamed (NH4)2SnCl6 compound identified in one of our experiment, indicate possible formation of ammonium complexes. In contrast to experiments where sulfides or selenides were used as a part of charge, mobility of uraninite was not proved under experimental conditions employed. It is consistent with an

An investigation of the microstructure and mechanical properties of electrochemically coated Ag(4)Sn dental alloy particles condensed in vitro

NASA Astrophysics Data System (ADS)

Marquez, Jose Antonio

As part of the ongoing scientific effort to develop a new amalgam-like material without mercury, a team of metallurgists and electrochemists at the National Institute of Standards and Technology (NIST) in Gaithersburg, Maryland, announced in 1993 the development of a new Ag-Sn dental alloy system without mercury that sought to replace conventional dental amalgams. They used spherical Ag3Sn and Ag4Sn intermetallic dental alloy particles, commonly used in conventional dental alloys, and coated them with electrodeposited silver with newly-developed electrolytic and immersion techniques. The particles had relatively pure silver coatings that were closely adherent to the intermetalfic cores. These silver-coated particles, due to silver's plasticity at room temperature, were condensed into PlexiglasRTM molds with the aid of an acidic surface activating solution (HBF4) and a mechanical condensing device, producing a metal-matrix composite with Ag3,4Sn filler particles surrounded by a cold-welded silver matrix. Since silver strain hardens rather easily, the layers had to be condensed in less than 0.5 mm increments to obtain a dense structure. Mechanical testing at NIST produced compressive strength values equal to or greater than those of conventional dental amalgams. Because of its potential for eliminating mercury as a constituent in dental amalgam, this material created a stir in dental circles when first developed and conceivably could prove to be a major breakthrough in the field of dental restoratives. To date, the chief impediments to its approval for human clinical applications by the Food and Drug Administration are the potentially-toxic surface activating solution used for oxide reduction, and the high condensation pressures needed for cold welding because of the tendency for silver to strain harden. In this related study, the author, who has practiced general dentistry for 25 years, evaluates some of the mechanical and microstructural properties of these

Origin and tectonic implications of the Zhaxikang Pb-Zn-Sb-Ag deposit in northern Himalaya: evidence from structures, Re-Os-Pb-S isotopes, and fluid inclusions

NASA Astrophysics Data System (ADS)

Zhou, Qing; Li, Wenchang; Qing, Chengshi; Lai, Yang; Li, Yingxu; Liao, Zhenwen; Wu, Jianyang; Wang, Shengwei; Dong, Lei; Tian, Enyuan

2018-04-01

The Zhaxikang Pb-Zn-Sb-Ag-(Au) deposits, located in the eastern part of northern Himalaya, totally contain more than 1.146 million tonnes (Mt) of Pb, 1.407 Mt of Zn, 0.345 Mt of Sb, and 3 kilotonnes (kt) of Ag. Our field observations suggest that these deposits are controlled by N-S trending and west- and steep-dipping normal faults, suggesting a hydrothermal rather than a syngenetic sedimentary origin. The Pb-Zn-Sb-Ag-(Cu-Au) mineralization formed in the Eocene as indicated by a Re-Os isochron age of 43.1 ± 2.5 Ma. Sulfide minerals have varying initial Pb isotopic compositions, with (206Pb/204Pb)i of 19.04-19.68, (207Pb/204Pb)i of 15.75-15.88, and (208Pb/204Pb)i of 39.66-40.31. Sulfur isotopic values display a narrow δ34S interval of +7.8-+12.2‰. These Pb-S isotopic data suggest that the Zhaxikang sources of Pb and S should be mainly from the coeval felsic magmas and partly from the surrounding Mesozoic strata including metasedimentary rocks and layered felsic volcanic rocks. Fluid inclusion studies indicate that the hydrothermal fluids have medium temperatures (200-336 °C) but varying salinities (1.40-18.25 wt.% NaCl equiv.) with densities of 0.75-0.95 g/cm3, possibly suggesting an evolution mixing between a high salinity fluid, perhaps of magmatic origin, with meteoric water.

Effect of Sn Grain Orientation on the Cu6Sn5 Formation in a Sn-Based Solder Under Current Stressing

NASA Astrophysics Data System (ADS)

Lin, Chih-Fan; Lee, Shang-Hua; Chen, Chih-Ming

2012-08-01

A SnAgCu-based solder stripe between two Cu electrodes is current stressed with a density of 5 × 104 A/cm2 at 393 K (120 °C). After current stressing for 24 hours, electromigration induces the Cu dissolution from the cathode-side Cu electrode, leading to the Cu6Sn5 formation in the solder stripe. Very interestingly, the Cu6Sn5 phase is selectively formed within a specific Sn grain. Electron backscattering diffraction analysis indicates the crystallographic orientations of Sn grains play an important role in the selective Cu6Sn5 formation.

Polaronic transport in Ag-based quaternary chalcogenides

NASA Astrophysics Data System (ADS)

Wei, Kaya; Khabibullin, Artem R.; Stedman, Troy; Woods, Lilia M.; Nolas, George S.

2017-09-01

Low temperature resistivity measurements on dense polycrystalline quaternary chalcogenides Ag2+xZn1-xSnSe4, with x = 0, 0.1, and 0.3, indicate polaronic type transport which we analyze employing a two-component Holstein model based on itinerant and localized polaron contributions. Electronic structure property calculations via density functional theory simulations on Ag2ZnSnSe4 for both energetically similar kesterite and stannite structure types were also performed in order to compare our results to those of the compositionally similar but well known Cu2ZnSnSe4. This theoretical comparison is crucial in understanding the bonding that results in polaronic type transport for Ag2ZnSnSe4, as well as the structural and electronic properties of both crystal structure types. In addition to possessing this unique electronic transport, the thermal conductivity of Ag2ZnSnSe4 is low and decreases with increasing silver content. This work reveals unique structure-property relationships in materials that continue to be of interest for thermoelectric and photovoltaic applications.

A modified constitutive model for creep of Sn-3.5Ag-0.7Cu solder joints

NASA Astrophysics Data System (ADS)

Han, Y. D.; Jing, H. Y.; Nai, S. M. L.; Tan, C. M.; Wei, J.; Xu, L. Y.; Zhang, S. R.

2009-06-01

In this study, the constitutive behaviour for creep performance of 95.8Sn-3.5Ag-0.7Cu lead-free solder joints was investigated. It was observed that the stress exponent (n) can be well defined into two stress regimes: low stress and high stress. A new, improved constitutive model, which considered back stress, was proposed to describe the creep behaviour of SnAgCu solder joints. In this model, the back stress, which is a function of the applied shear stress in the low stress regime (LSR) and a function of the particle size, volume fraction and coarsening of IMC particles in the high stress regime (HSR), was introduced to construct the relationship between the creep strain rate and the shear stress. The creep mechanism in these two stress regimes was studied in detail. In the LSR, dislocations passed through the matrix by climbing over the intermetallic particles, while in the HSR, the dislocations were glide-controlled. According to the different creep mechanisms in both the stress regimes, the back stress was calculated, respectively, and then incorporated into the Arrhenius power-law creep model. It was demonstrated that the predicted strain rate-shear stress behaviour employing the modified creep constitutive model which considered back stress, was in good agreement with the experimental results.

Relationship between the Porco, Bolivia, Ag-Zn-Pb-Sn deposit and the Porco Caldera

USGS Publications Warehouse

Cunningham, C.G.

1994-01-01

The Porco Ag-Zn-Pb-Sn deposit, a major Ag producer in the 16th century and currently the major Zn producer in Bolivia, consists of a swarm of fissure-filling veins in the newly recognized Porco caldera. The caldera measures 5 km by 3 km and formed in response to the eruption of the 12 Ma crystal-rich dacitic Porco Tuff. The mineralization is associated with, and is probably genetically related to, the 8.6 Ma Huayna Porco stock. The Porco deposit consists of steeply dipping irregular and curvilinear veins that cut the intracaldera Porco Tuff about 1 km east of the Huayna Porco stock. Most of the veins are aligned along the structural margin (ring fracture) of the caldera. The ore deposit is zoned around the Huayna Porco stock. The primary Ag minerals are most abundant in the upper parts of the viens. Fluid inclusions in sphalerite stalactites have homogenization temperatures of about 225??C and salinities of about 8 wt% NaCl equiv. The stalactites and the presence of sparse vapor-rich inclusions suggest deposition of sphalerite under boiling conditions. -from Authors

Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump

NASA Astrophysics Data System (ADS)

Huang, Yi-Ting; Chen, Chih-Hao; Chakroborty, Subhendu; Wu, Albert T.

2017-09-01

This article addresses the reliability challenges regarding electromigration in developing three-dimensional integrated circuits (3D-ICs). The line-type sandwich structure of Ni/Sn3.5Ag(15 μm)/Ni was used to simulate microbumps to examine the reliability of electromigration in 3D-IC technology. The solder strip of Ni/Sn3.5Ag(15 μm)/Ni was stressed with a current density of 1.0 × 104 A/cm2 at 150°C. The current stressing enhanced the reaction between the solder and Ni to form Ni3Sn4, which occupied the entire joint and transformed into a Ni/Ni3Sn4/Ni structure when the solder was completely consumed. Electron backscatter diffraction was used to analyze the crystallographic characteristics of Sn and Ni3Sn4 as related to the electromigration effect. The results indicated that the crystallographic orientation of Sn plays a significant role in the Ni/Sn3.5Ag/Ni, whereas the orientation of Ni3Sn4 is the dominant factor of diffusion behavior in the Ni/Ni3Sn4/Ni.

An ab initio study on the structural, electronic and mechanical properties of quaternary full-Heusler alloys FeMnCrSn and FeMnCrSb

NASA Astrophysics Data System (ADS)

Erkişi, Aytaç

2018-06-01

The quaternary full Heusler alloys FeMnCrSn and FeMnCrSb, which have face-centred cubic (FCC) crystal structure and conform to ? space group with 216 space number, have been investigated using Generalised Gradient Approximation (GGA) in the Density Functional Theory (DFT) as implemented in VASP (Vienna Ab initio Simulation Package) software. These alloys are considered in ferromagnetic (FM) order. After the investigation of structural stability of these alloys, their mechanical and thermal properties and also electronic band structures have been examined. The calculated spin-polarised electronic band structures and total electronic density of states (DOS) within GGA approximation show that these alloys can exhibit both metallic and half-metallic characters in different structural phases. The calculated formation enthalpies and the plotted energy-volume graphs show that Type-III phase is most stable structural phase for these materials. Also, FeMnCrSb alloy in Type-I/Type-III phases and FeMnCrSn alloy in Type-III phase show half-metallic behaviour with integer total magnetic moments almost 2 and 1 μB per formula unit, respectively, since there are band gaps observed in spin-down states, whereas they have metallic behaviour in majority bands. Other structural phases of both systems are also metallic. Moreover, the calculated elastic constants and the estimated anisotropy shear factors indicate that these materials are stable mechanically in all of three phases except FeMnCrSn in Type-I phase that does not satisfy Born stability criteria in this phase and have high anisotropic behaviour.

Substrate effect on the growth of Sn thin films

NASA Astrophysics Data System (ADS)

Chakraborty, Suvankar; Menon, Krishnakumar S. R.

2018-05-01

Growth of tin (Sn) on Ag(001), Ag(111) and W(110) substrate has been studied at elevated temperatures (473 K) using x-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). For Sn growth on silver substrates, it is noticed that both Sn 3d and Ag 3d core-level spectra shift in the higher binding energy direction due to the formation of surface alloy with the substrate. In both cases, surface alloy finally transforms into bulk alloy finally reaching bulk Sn value. For Sn growth on W(110) only Sn 3d core-level spectra shift in the higher binding energy direction due to surface core-level effect whereas no shift for tungsten core-level was noticed confirming no alloy formation. Sn is incorporated into the surface of substrate silver layer by removing every alternate or every third silver atoms to relieve the surface tensile stress as confirmed by LEED. On the other hand, tungsten being hard, Sn forms an overlayer structure by sitting in different energetically available positions rather than forming an alloy as energetically also it is not possible. Sn forms alloy with soft substrate silver and form overlayer films with tungsten. These studies are important in understanding the growth mechanism of Sn films on metal substrates.

Influence of defects on the thermoelectricity in SnSe: A comprehensive theoretical study

NASA Astrophysics Data System (ADS)

Zhou, Yecheng; Li, Wei; Wu, Minghui; Zhao, Li-Dong; He, Jiaqing; Wei, Su-Huai; Huang, Li

2018-06-01

SnSe has emerged as an efficient and fascinating thermoelectric material. A fundamental understanding of the effects and nature of intrinsic defects and dopants in SnSe is crucial to optimize its thermoelectric performance. In this paper, we perform first-principles calculations to examine the native and extrinsic point-defect properties in SnSe. We show that the easy formation of acceptorlike Sn vacancy (VSn) is responsible for the p -type conductivity in intrinsic SnSe. We also propose a mechanism and explain the anomalous temperature dependence of the carrier concentration in intrinsic SnSe crystals. Concerning the extrinsic defects, we focus on the dopants used in experiments. We find that Na (Ag) substitution on Sn site, NaSn (AgSn), acts as acceptor, whereas, substitutional BrSe, ISe, and BiSn dopants act as donor. It is shown that for Ag doping, its carrier concentration will be saturated with increasing doping concentration due to the coexistence of compensated defects (Agi and AgSn). Furthermore, we analyze how this doping introduced carrier impact on their thermoelectric characteristics. It is found that the more efficient doping of Na, Br, and I can realize higher Z T .

Effects of simulated acid rain, EDTA, or their combination, on migration and chemical fraction distribution of extraneous metals in Ferrosol.

PubMed

Wen, Fang; Hou, Hong; Yao, Na; Yan, Zengguang; Bai, Liping; Li, Fasheng

2013-01-01

A laboratory repacked soil-leaching column experiment was conducted to study the effects of simulated acid rain or EDTA by themselves or in combination, on migration and chemical speciation distribution of Pb and its alternative rare metals including Ag, Bi, In, Sb, and Sn. Experimental results demonstrate that leaching with simulated acid rain promoted the migration of Bi, In and Pb, and their migration reached down to 8 cm in the soil profile, no enhancement of Sb, Ag or Sn migration was observed. Addition of EDTA significantly enhanced the migration of all six metals, especially Bi, In and Pb. The migration of metals was in the order Pb>Bi>In>Sb>Sn>Ag. The individual and combined effects of acid rain and EDTA increased the environmental risk of metals, by increasing the soluble content of metals in soil solutions and the relative distribution of the exchangeable fraction. Leaching risks of Bi, In and Pb were higher than other three metals. Copyright © 2012 Elsevier Ltd. All rights reserved.

The Influence of Processing on Strengthening Mechanisms in Pb-Free Solder Joints

NASA Astrophysics Data System (ADS)

Mutuku, Francis; Arfaei, Babak; Cotts, Eric J.

2017-04-01

The number, and the spacing, of Ag3Sn precipitates in Sn-Ag-Cu/Cu solder joints were related to separate processing parameters. The mechanical properties of an individual solder joint were directly related to the resulting distribution of different dispersoids in the joint. As the number of Ag3Sn precipitates increased, so did solder joint strength and shear fatigue lifetime. The room-temperature shear fatigue lifetime was inversely correlated with the separation between Ag3Sn precipitates. Bi and Sb solid solution strengthening was found to result in significantly larger values of shear strength and shear fatigue lifetime for one Pb-free solder. Room-temperature shear fatigue lifetime tests were identified as a relatively straightforward, yet sensitive means to gain insight into the reliability of Sn-Ag-Cu (SAC) solder joints.

Distribution of chemical elements in soils and stream sediments in the area of abandoned Sb-As-Tl Allchar mine, Republic of Macedonia.

PubMed

Bačeva, Katerina; Stafilov, Trajče; Šajn, Robert; Tănăselia, Claudiu; Makreski, Petre

2014-08-01

The aim of this study was to investigate the distribution of some toxic elements in topsoil and subsoil, focusing on the identification of natural and anthropogenic element sources in the small region of rare As-Sb-Tl mineralization outcrop and abandoned mine Allchar known for the highest natural concentration of Tl in soil worldwide. The samples of soil and sediments after total digestion were analyzed by inductively coupled plasma-mass spectrometry (ICP-MS) and inductively coupled plasma-atomic emission spectrometry (ICP-AES). Factor analysis (FA) was used to identify and characterize element associations. Six associations of elements were determined by the method of multivariate statistics: Rb-Ta-K-Nb-Ga-Sn-Ba-Bi-Li-Be-(La-Eu)-Hf-Zr-Zn-In-Pd-Ag-Pt-Mg; Tl-As-Sb-Hg; Te-S-Ag-Pt-Al-Sc-(Gd-Lu)-Y; Fe-Cu-V-Ge-Co-In; Pd-Zr-Hf-W-Be and Ni-Mn-Co-Cr-Mg. The purpose of the assessment was to determine the nature and extent of potential contamination as well as to broadly assess possible impacts to human health and the environment. The results from the analysis of the collected samples in the vicinity of the mine revealed that As and Tl elements have the highest median values. Higher median values for Sb are obviously as a result of the past mining activities and as a result of area surface phenomena in the past. Copyright © 2014 Elsevier Inc. All rights reserved.

Structural and Solar Cell Properties of a Ag-Containing Cu2ZnSnS4 Thin Film Derived from Spray Pyrolysis.

PubMed

Nguyen, Thi Hiep; Kawaguchi, Takato; Chantana, Jakapan; Minemoto, Takashi; Harada, Takashi; Nakanishi, Shuji; Ikeda, Shigeru

2018-02-14

A silver (Ag)-incorporated kesterite Cu 2 ZnSnS 4 (CZTS) thin film was fabricated by a facile spray pyrolysis method. Crystallographic analyses indicated successful incorporation of various amounts of Ag up to a Ag/(Ag + Cu) ratio of ca. 0.1 into the crystal lattice of CZTS in a homogeneous manner without formation of other impurity compounds. From the results of morphological investigations, Ag-incorporated films had larger crystal grains than the CZTS film. The sample with a relatively low Ag content (Ag/(Ag + Cu) of ca. 0.02) had a compact morphology without appreciable voids and pinholes. However, an increase in the Ag content in the CZTS film (Ag/(Ag + Cu) ca. 0.10) induced the formation of a large number of pinholes. As can be expected from these morphological properties, the best sunlight conversion efficiency was obtained by the solar cell based on the film with Ag/(Ag + Cu) of ca. 0.02. Electrostructural analyses of the devices suggested that the Ag-incorporated film in the device achieved reduction in the amounts of unfavorable copper on zinc antisite defects compared to the bare CZTS film. Moreover, the use of a Ag-incorporated film improved band alignment at the CdS(buffer)-CZTS interface. These alterations should also contribute to enhancement of device properties.

Synergetic effect of Zn substitution on the electron and phonon transport in Mg2Si0.5Sn0.5-based thermoelectric materials.

PubMed

Gao, Hongli; Zhu, Tiejun; Zhao, Xinbing; Deng, Yuan

2014-10-07

Mg2Si1-xSnx alloys are a prospective material for thermoelectric generators at moderate temperatures. The thermoelectric properties of Mg2Si0.5Sn0.5-based thermoelectric materials with only Zn substitution or Zn/Sb co-doping were investigated. Isoelectronic Zn substitution did not affect the carrier concentration, but improved the carrier mobility. Zn atoms incorporated into a Sb-doped Mg2Si0.5Sn0.5 matrix simultaneously boosted the power factor and suppressed the lattice thermal conductivity, leading to an enhancement of the thermoelectric figure of merit ZT of the resulting bulk materials. The interplay between the electron and phonon transport of Mg2Si0.5Sn0.49Sb0.01 substituted with Zn at Mg sites results in an enhancement of the ZT by 25% at ∼730 K, from ZT≈ 0.8 in Mg2Si0.5Sn0.49Sb0.01 to ZT≈ 1.0 in Mg1.98Zn0.02Si0.5Sn0.49Sb0.01. Solid solutions in the Mg2Si-Mg2Sn system appear to be more promising for thermoelectric applications.

Effects of Surface Finishes and Current Stressing on Interfacial Reaction Characteristics of Sn-3.0Ag-0.5Cu Solder Bumps

NASA Astrophysics Data System (ADS)

Kim, Jae-Myeong; Jeong, Myeong-Hyeok; Yoo, Sehoon; Park, Young-Bae

2012-04-01

The effects of surface finishes on the in situ interfacial reaction characteristics of ball grid array (BGA) Sn-3.0Ag-0.5Cu lead-free solder bumps were investigated under annealing and electromigration (EM) test conditions of 130°C to 175°C with 5.0 × 103 A/cm2. During reflow and annealing, (Cu,Ni)6Sn5 intermetallic compound (IMC) formed at the interface of electroless nickel immersion gold (ENIG) finish. In the case of both immersion Sn and organic solderability preservative (OSP) finishes, Cu6Sn5 and Cu3Sn IMCs formed. Overall, the IMC growth velocity of ENIG was much lower than that of the other finishes. The activation energies of total IMCs were found to be 0.52 eV for ENIG, 0.78 eV for immersion Sn, and 0.72 eV for OSP. The ENIG finish appeared to present an effective diffusion barrier between the Cu substrate and the solder, which leads to better EM reliability in comparison with Cu-based pad systems. The failure mechanisms were explored in detail via in situ EM tests.

Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity

DOE PAGES

He, Ran; Huang, Lihong; Wang, Yumei; ...

2016-06-01

In this paper, we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ~35 μW cm -1 K -2 and figure of merit (ZT) value ~0.6 in NbCoSn 0.9Sb 0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W -1) is decreased by ~68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.

Microstructural characterization and mechanical property of active soldering anodized 6061 Al alloy using Sn-3.5Ag-xTi active solders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wei-Lin, E-mail: wangwl77@gmail.com; Tsai, Yi-Chia, E-mail: tij@itri.org.tw

2012-06-15

Active solders Sn-3.5Ag-xTi varied from x = 0 to 6 wt.% Ti addition were prepared by vacuum arc re-melting and the resultant phase formation and variation of microstructure with titanium concentration were analyzed using X-ray diffraction, optical microscopy and scanning electron microscopy. The Sn-3.5Ag-xTi active solders are used as metallic filler to join with anodized 6061 Al alloy for potential applications of providing a higher heat conduction path. Their joints and mechanical properties were characterized and evaluated in terms of titanium content. The mechanical property of joints was measured by shear testing. The joint strength was very dependent on themore » titanium content. Solder with a 0.5 wt.% Ti addition can successfully wet and bond to the anodized aluminum oxide layers of Al alloy and posses a shear strength of 16.28 {+-} 0.64 MPa. The maximum bonding strength reached 22.24 {+-} 0.70 MPa at a 3 wt.% Ti addition. Interfacial reaction phase and chemical composition were identified by a transmission electron microscope with energy dispersive spectrometer. Results showed that the Ti element reacts with anodized aluminum oxide to form Al{sub 3}Ti-rich and Al{sub 3}Ti phases at the joint interfaces. - Highlights: Black-Right-Pointing-Pointer Active solder joining of anodized Al alloy needs 0.5 wt.% Ti addition for Sn-3.5Ag. Black-Right-Pointing-Pointer The maximum bonding strength occurs at 3 wt.% Ti addition. Black-Right-Pointing-Pointer The Ti reacts with anodized Al oxide to form Al{sub 3}Ti-rich and Al{sub 3}Ti at joint interface.« less

Structural and superionic properties of Ag+-rich ternary phases within the AgI-MI2 systems

NASA Astrophysics Data System (ADS)

Hull, S.; Keen, D. A.; Berastegui, P.

2002-12-01

The effects of temperature on the crystal structure and ionic conductivity of the compounds Ag2CdI4, Ag2ZnI4 and Ag3SnI5 have been investigated by powder diffraction and impedance spectroscopy techniques. varepsilon-Ag2CdI4 adopts a tetragonal crystal structure under ambient conditions and abrupt increases in the ionic conductivity are observed at 407(2), 447(3) and 532(4) K, consistent with the sequence of transitions varepsilon-Ag2CdI 4 rightarrow beta-Ag2CdI 4 + beta-AgI + CdI2 rightarrow alpha-AgI + CdI2 rightarrow alpha-Ag2CdI4. Hexagonal beta-Ag2CdI4 is metastable at ambient temperature. The ambient-temperature beta phase of Ag2ZnI4 is orthorhombic and the structures of beta-Ag2CdI4 and beta-Ag2ZnI4 can, respectively, be considered as ordered derivatives of the wurtzite (beta) and zincblende (gamma) phases of AgI. On heating Ag2ZnI4, there is a 12-fold increase in ionic conductivity at 481(1) K and a further eightfold increase at 542(3) K. These changes result from decomposition of beta-Ag2ZnI4 into alpha-AgI + ZnI2, followed by the appearance of superionic alpha-Ag2ZnI4 at the higher temperature. The hexagonal crystal structure of alpha-Ag2ZnI4 is a dynamically disordered counterpart to the beta modification. Ag3SnI5 is only stable at temperatures in excess of 370(3) K and possesses a relatively high ionic conductivity (sigma approx 0.19Omega-1 cm-1 at 420 K) due to dynamic disorder of the Ag+ and Sn2+ within a cubic close packed I- sublattice. The implications of these findings for the wider issue of high ionic conductivity in AgI-MI2 compounds is discussed, with reference to recently published studies of Ag4PbI6 and Ag2HgI4 and new data for the temperature dependence of the ionic conductivity of the latter compound.

Fabrication of Sb₂S₃ Hybrid Solar Cells Based on Embedded Photoelectrodes of Ag Nanowires-Au Nanoparticles Composite.

PubMed

Kim, Kang-Pil; Hwang, Dae-Kue; Woo, Sung-Ho; Kim, Dae-Hwan

2018-09-01

The Ag nanowire (NW) + Au nanoparticle (NP)-embedded TiO2 photoelectrodes were adopted for conventional planar TiO2-based Sb2S3 hybrid solar cells to improve the cell efficiency. Compared to conventional planar TiO2-based Sb2S3 hybrid solar cells, the Ag NW + Au NP/TiO2-based Sb2S3 hybrid solar cells exhibited an improvement of approximately 40% in the cell efficiency due to the significant increase in both Jsc and Voc. These enhanced Jsc and Voc were attributed to the increased surface area, charge-collection efficiency, and light absorption by embedding the Ag NWs + Au NPs composite. The Ag NW + Au NP/TiO2-based Sb2S3 hybrid solar cells showed the highest efficiency of 2.17%, demonstrating that the Ag NW + Au NP-embedded TiO2 photoelectrode was a suitable photoelectrode structure to improve the power conversion efficiency in the Sb2S3 hybrid solar cells.

Magnetic properties and magnetocaloric effect at room temperature of Ni50- x Ag x Mn37Sn13 alloys

NASA Astrophysics Data System (ADS)

Thanh, Tran Dang; Mai, Nguyen Thi; Dan, Nguyen Huy; Phan, The-Long; Yu, Seong-Cho

2014-11-01

In this work, we present a detailed study of the magnetic properties and the magnetocaloric effect at room temperature of Ni50- x Ag x Mn37Sn13 alloys with x = 1, 2, and 4, which were prepared by using an arc-melting method. Experimental results reveal that a partial replacement of Ag for Ni leads to a decrease in the anti-FM phase in the alloys. In addition, the martensitic-austenitic phase transition shifts towards lower temperature and is broaded. The Curie temperature ( T C A ) for the austenitic phase also shifts toward to lower temperature, but not by much. The Curie temperature was found to be 308, 305, and 298 K for x = 1, 2, and 4, respectively. The magnetic entropy change (Δ S m ) of the samples was calculated by using isothermal magnetization data. Under an applied magnetic field change of 10 kOe, the maximum value of Δ S m (|Δ S max |) was achieved at around room temperature and did not change much (~0.8 J·kg-1·K-1) with increasing Ag-doping concentration. Particularly, the M 2 vs. H/ M curves prove that all the samples exhibited a second-order magnetic phase transition. Based on Landau's phase-transition theory and careful analyses of the magnetic data around the T C A , we have determined the critical parameters β, γ, δ, and T C . The results show that the β values are located between those expected for the 3D-Heisenberg model ( β = 0.365) and mean-field theory ( β = 0.5). Such a result proves the coexistence of short-range and long-range ferromagnetic interactions in Ni50- x Ag x Mn37Sn13 alloys. The nature of the changes in the critical parameters and the |Δ S max | is thoroughly discussed by means of structural analyses.

Sn-doped Bi1.1Sb0.9Te2S: An ideal bulk topological insulator

NASA Astrophysics Data System (ADS)

Kushwaha, Sk; Pletikosic, I.; Liang, T.; Gyenis, A.; Lapidus, Sh; Tian, Y.; Zhao, H.; Burch, Ks; Lin, J.; Wang, W.; Ji, H.; Fedorov, Av; Yazdani, A.; Ong, Np; Valla, T.; Cava, Rj

In the recent decade the topological insulators have been of significant importance for the condensed matter community. However, so far no real materials could fulfill all the requirements. Here, we present the Bridgman growth of slightly Sn-doped Bi1.1Sb0.9Te2S (with bulk band gap of 350) single crystals and characterization by electronic transport, STM and ARPES. The results on the crystals exhibit an intrinsic semiconducting behavior with the Fermi level and Dirac energies lie in bulk gap and high quality 2D surface states are detangled from the bulk states, and it fulfils all the requirements to be an ideal topological insulator. ARO MURI W911NF-12-1-0461; ARO W911NF-12-1-0461; MRSEC NSF-DMR-1420541; LBNL & BNL DE-AC02-05CH11231 & DE-SC0012704; DOE Office of Science DE-AC02-06CH11357; NSF DMR-1410846.

Diameter-Controlled and Surface-Modified Sb2Se3 Nanowires and Their Photodetector Performance

NASA Astrophysics Data System (ADS)

Choi, Donghyeuk; Jang, Yamujin; Lee, Jeehee; Jeong, Gyoung Hwa; Whang, Dongmok; Hwang, Sung Woo; Cho, Kyung-Sang; Kim, Sang-Wook

2014-10-01

Due to its direct and narrow band gap, high chemical stability, and high Seebeck coefficient (1800 μVK-1), antimony selenide (Sb2Se3) has many potential applications, such as in photovoltaic devices, thermoelectric devices, and solar cells. However, research on the Sb2Se3 materials has been limited by its low electrical conductivity in bulk state. To overcome this challenge, we suggest two kinds of nano-structured materials, namely, the diameter-controlled Sb2Se3 nanowires and Ag2Se-decorated Sb2Se3 nanowires. The photocurrent response of diameter-controlled Sb2Se3, which depends on electrical conductivity of the material, increases non-linearly with the diameter of the nanowire. The photosensitivity factor (K = Ilight/Idark) of the intrinsic Sb2Se3 nanowire with diameter of 80-100 nm is highly improved (K = 75). Additionally, the measurement was conducted using a single nanowire under low source-drain voltage. The dark- and photocurrent of the Ag2Se-decorated Sb2Se3 nanowire further increased, as compared to that of the intrinsic Sb2Se3 nanowire, to approximately 50 and 7 times, respectively.

Probing the magnetic ground state of single crystalline Ce3TiSb5

NASA Astrophysics Data System (ADS)

Matin, M.; Kulkarni, R.; Thamizhavel, A.; Dhar, S. K.; Provino, A.; Manfrinetti, P.

2017-04-01

Motivated by the report of superconductivity in R3TiSb5 (R  =  La and Ce) and possibly Nd3TiSb5 at  ∼4 K, we grew single crystals of La3TiSb5 and Ce3TiSb5 by the high-temperature solution method using Sn as a flux. While in both compounds we observed a superconducting transition at 3.7 K for resistivity and low-field magnetization, our data conclusively show that it arose from residual Sn flux present in the single crystals. In particular, the heat capacity data do not present any of the anomalies expected from a bulk superconducting transition. The anisotropic magnetic properties of Ce3TiSb5, crystallizing in a hexagonal P63/mcm structure, were studied in detail. We find that the Ce ions in Ce3TiSb5 form a Kondo lattice and exhibited antiferromagnetic ordering at 5.5 K with a reduced moment and a moderately normalized Sommerfeld coefficient of 598 mJ/mol K2. The characteristic single-ion Kondo energy scale was found to be  ∼8 K. The magnetization data were subjected to a crystal electric field (CEF) analysis. The experimentally observed Schottky peak in the 4f-electron heat capacity of Ce3TiSb5 was reproduced fairly well by the energy levels derived from the CEF analysis.

Nuclear isomerism in 100Sn neighbors

NASA Astrophysics Data System (ADS)

Ishii, M.; Ishii, T.; Makishima, A.; Ogawa, M.; Momoki, G.; Ogawa, K.

1995-01-01

Data on B(E2), B(M1) and B(E1) were obtained from lifetime measurements in 103, 105, 107In, 105-108Sn and 109Sb. These data helped us to assign the nuclear configurations to the involved states. The experimental B(E2) and B(M1) values in the Sn isotopes worked as litmus paper to test the wave functions calculated on the basis of the shell model. The present calculation gave a qualitative description of M1 transitions in the Sn isotopes but has not yet succeeded in quantitative estimation of B(M1). Calculated B(E2) values were far from the reality since 100Sn was assumed there to be inert against excitation.

Effect of different sound atmospheres on SnO2:Sb thin films prepared by dip coating technique

NASA Astrophysics Data System (ADS)

Kocyigit, Adem; Ozturk, Erhan; Ejderha, Kadir; Turgut, Guven

2017-11-01

Different sound atmosphere effects were investigated on SnO2:Sb thin films, which were deposited with dip coating technique. Two sound atmospheres were used in this study; one of them was nay sound atmosphere for soft sound, another was metallic sound for hard sound. X-ray diffraction (XRD) graphs have indicated that the films have different orientations and structural parameters in quiet room, metallic and soft sound atmospheres. It could be seen from UV-Vis spectrometer measurements that films have different band gaps and optical transmittances with changing sound atmospheres. Scanning electron microscope (SEM) and AFM images of the films have been pointed out that surfaces of films have been affected with changing sound atmospheres. The electrical measurements have shown that films have different I-V plots and different sheet resistances with changing sound atmospheres. These sound effects may be used to manage atoms in nano dimensions.

Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

NASA Astrophysics Data System (ADS)

Kalkan, B.; Edwards, T. G.; Raoux, S.; Sen, S.

2013-08-01

The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ˜5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous → β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ˜2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression.

Metastable Se6 as a ligand for Ag+: from isolated molecular to polymeric 1D and 2D structures.

PubMed

Aris, Damian; Beck, Johannes; Decken, Andreas; Dionne, Isabelle; Schmedt auf der Günne, Jörn; Hoffbauer, Wilfried; Köchner, Tobias; Krossing, Ingo; Passmore, Jack; Rivard, Eric; Steden, Folker; Wang, Xinping

2011-06-14

Attempts to prepare the hitherto unknown Se(6)(2+) cation by the reaction of elemental selenium and Ag[A] ([A](-) = [Sb(OTeF(5))(6)](-), [Al(OC(CF(3))(3))(4)](-)) in SO(2) led to the formation of [(OSO)Ag(Se(6))Ag(OSO)][Sb(OTeF(5))(6)](2)1 and [(OSO)(2)Ag(Se(6))Ag(OSO)(2)][Al(OC(CF(3))(3))(4)](2)2a. 1 could only be prepared by using bromine as co-oxidant, however, bulk 2b (2a with loss of SO(2)) was accessible from Ag[Al(OC(CF(3))(3))(4)] and grey Se in SO(2) (chem. analysis). The reactions of Ag[MF(6)] (M = As, Sb) and elemental selenium led to crystals of 1/∞{[Ag(Se(6))](∞)[Ag(2)(SbF(6))(3)](∞)} 3 and {1/∞[Ag(Se(6))Ag](∞)}[AsF(6)](2)4. Pure bulk 4 was best prepared by the reaction of Se(4)[AsF(6)](2), silver metal and elemental selenium. Attempts to prepare bulk 1 and 3 were unsuccessful. 1-4 were characterized by single-crystal X-ray structure determinations, 2b and 4 additionally by chemical analysis and 4 also by X-ray powder diffraction, FT-Raman and FT-IR spectroscopy. Application of the PRESTO III sequence allowed for the first time (109)Ag MAS NMR investigations of 4 as well as AgF, AgF(2), AgMF(6) and {1/∞[Ag(I(2))](∞)}[MF(6)] (M = As, Sb). Compounds 1 and 2a/b, with the very large counter ions, contain isolated [Ag(Se(6))Ag](2+) heterocubane units consisting of a Se(6) molecule bicapped by two silver cations (local D(3d) sym). 3 and 4, with the smaller anions, contain close packed stacked arrays of Se(6) rings with Ag(+) residing in octahedral holes. Each Ag(+) ion coordinates to three selenium atoms of each adjacent Se(6) ring. 4 contains [Ag(Se(6))(+)](∞) stacks additionally linked by Ag(2)(+) into a two dimensional network. 3 features a remarkable 3-dimensional [Ag(2)(SbF(6))(3)](-) anion held together by strong Sb-FAg contacts between the component Ag(+) and [SbF(6)](-) ions. The hexagonal channels formed by the [Ag(2)(SbF(6))(3)](-) anions are filled by stacks of [Ag(Se(6))(+)](∞) cations. Overall 1-4 are new members of the rare

Effect of Interfacial Microstructures on the Bonding Strength of Sn-3.0Ag-0.5Cu Pb-Free Solder Bump

NASA Astrophysics Data System (ADS)

Kim, Jae-Myeong; Jeong, Myeong-Hyeok; Yoo, Sehoon; Park, Young-Bae

2012-05-01

The effect of interfacial microstructures on the bonding strength of Sn-3.0Ag-0.5Cu Pb-free solder bumps with respect to the loading speed, annealing time, and surface finish was investigated. The shear strength increased and the ductility decreased with increasing shear speed, primarily because of the time-independent plastic hardening and time-dependent strain-rate sensitivity of the solder alloy. The shear strength and toughness decreased for all surface finishes under the high-speed shear test of 500 mm/s as a result of increasing intermetallic compound (IMC) growth and pad interface weakness associated with increased annealing time. The immersion Sn and organic solderability preservative (OSP) finishes showed lower shear strength compared to the electroless nickel immersion gold (ENIG) finish. With increasing annealing time, the ENIG finish exhibited the pad open fracture mode, whereas the immersion Sn and OSP finishes exhibited the brittle fracture mode. In addition, the shear strength of the solder joints was correlated with each fracture mode.

HPLC method for determination of SN-38 content and SN-38 entrapment efficiency in a novel liposome-based formulation, LE-SN38.

PubMed

Xuan, Tong; Zhang, J Allen; Ahmad, Imran

2006-05-03

A simple HPLC method was developed for quantification of SN-38, 7-ethyl-10-hydroxycamptothecin, in a novel liposome-based formulation (LE-SN38). The chromatographic separation was achieved on an Agilent Zorbax SB-C18 (4.6 mmx250 mm, 5 microm) analytical column using a mobile phase consisting of a mixture of NaH2PO4 (pH 3.1, 25 mM) and acetonitrile (50:50, v/v). SN-38 was detected at UV wavelength of 265 nm and quantitatively determined using an external calibration method. The limit of detection (LOD) and limit of quantitation (LOQ) were found to be 0.05 and 0.25 microg/mL, respectively. The individual spike recovery of SN-38 ranged from 100 to 101%. The percent of relative standard deviation (%R.S.D.) of intra-day and inter-day analyses were less than 1.6%. The method validation results confirmed that the method is specific, linear, accurate, precise, robust and sensitive for its intended use. The current method was successfully applied to the determination of SN-38 content and drug entrapment efficiency in liposome-based formulation, LE-SN38 during early stage formulation development.

Interfacial reaction and microstructure between the Sn3Ag0.5Cu solder and Cu-Co dual-phase substrate

NASA Astrophysics Data System (ADS)

Li, Chao; Hu, Xiaowu; Jiang, Xiongxin; Li, Yulong

2018-07-01

In this study, interfacial reactions and microstructures of the Sn3Ag0.5Cu (SAC305)/Cu- xCo ( x = 0, 30 and 50 wt%) systems were investigated during reflowing at 290 °C and solid-state aging at 150 °C for various time. The effects of different contents of Co in substrate on interfacial reaction in SAC305/Cu- xCo system were discussed. It was found that the addition of Co into pure copper substrate to achieve alloying would effectively inhibit the growth of IMC layers. Comparison among the thickness of the intermetallic compound (IMC) in three kinds of SAC305/Cu-Co systems indicated that the IMC layer of SAC305/Cu joint was thicker than that of the other two types of solder joints. The composition of the SAC305/Cu IMC layers was Cu6Sn5 and Cu3Sn. Three kinds of reaction phases (Cu,Co)6Sn5, (Cu,Co)Sn2 and (Cu,Co)3Sn were found at the interfaces of the SAC305/Cu-30Co and SAC305/Cu-50Co joints. Remarkably the (Cu,Co)Sn2 phase was found adjacent to the Co-rich phase after soldering and eliminated after the aging treatment. While the (Cu,Co)3Sn phase accumulated increasingly adjacent to the substrate with the increased aging time. The results suggested that the Co content increased from 30 to 50 wt% in substrate lead to significant restraint of the growth of interfacial IMC. In addition, the thickness of the interfacial IMC layer was linear with the square root of the aging time during the aging process. The reaction rate between Sn atoms in solder and Cu, Co atoms in substrate was quite different, which lead to the fact that the interface of SAC305/Cu-Co is uneven on the side of substrate after reflowing and aging.

Hierarchical active factors to band gap and nonlinear optical response in Ag-containing quaternary-chalcogenide compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Jun-ben; Xinjiang Key Laboratory of Electronic Information Material and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, 40-1 South Beijing Road, Urumqi 830011; Mamat, Mamatrishat, E-mail: mmtrxt@xju.edu.cn

In this research work, Ag-containing quaternary-chalcogenide compounds KAg{sub 2}TS{sub 4} (T=P, Sb) (I-II) and RbAg{sub 2}SbS{sub 4} (III) have been studied by means of Density Functional Theory as potential IR nonlinear optical materials. The origin of wide band gap, different optical anisotropy and large SHG response is explained via a combination of density of states, electronic density difference and bond population analysis. It is indicated that the different covalent interaction behavior of P-S and Sb-S bonds dominates the band gap and birefringence. Specifically, the Ag-containing chalcogenide compound KAg{sub 2}PS{sub 4} possesses wide band gap and SHG response comparable with thatmore » of AgGaS{sub 2}. By exploring the origin of the band gap and NLO response for compounds KAg{sub 2}TS{sub 4} (T=P, Sb), we found the determination factor to the properties is different, especially the roles of Ag-d orbitals and bonding behavior of P-S or Sb-S. Thus, the compounds KAg{sub 2}TS{sub 4} (T=P, Sb) and RbAg{sub 2}SbS{sub 4} can be used in infrared (IR) region. - Graphical abstract: Metal thiophosphates RbPbPS{sub 4} and KSbP{sub 2}S{sub 6} have a similar band gap with KAg{sub 2}PS{sub 4}. However, based on first principles calculated results it shown that KAg{sub 2}PS{sub 4} possesses wide band gap (3.02 eV) and relatively large SHG response. Display Omitted.« less

Effect of electromigration-induced back stress gradient on nanoindentation marker movement in SnAgCu solder joints

NASA Astrophysics Data System (ADS)

Xu, Luhua; Pang, John H. L.; Tu, K. N.

2006-11-01

The electromigration-induced back stress in Pb-free SnAgCu solder was studied by an area array of nanoindentation markers on the cross section of a solder joint. The marker movements driven by combined electron wind force and electromigration-induced back stress gradient were measured at different locations. The back stress gradient was determined from the observation of marker motion using the proposed model. With the applied current density of 104A/cm2 at 125°C, the stress gradient near the anode is 97kPa/μm.

Antiferromagnetism in semiconducting SrMn 2 Sb 2 and BaMn 2 Sb 2 single crystals

DOE PAGES

Sangeetha, N. S.; Smetana, V.; Mudring, A. -V.; ...

2018-01-03

Here, crystals of SrMn 2Sb 2 and BaMn 2Sb 2 were grown using Sn flux and characterized by powder and single-crystal x-ray diffraction, respectively, and by single-crystal electrical resistivity ρ, heat capacity C p, and magnetic susceptibility χ measurements versus temperature T, and magnetization versus field M(H) isotherm measurements. SrMn 2Sb 2 adopts the trigonal CaAl 2Si 2-type structure, whereas BaMn 2Sb 2 crystallizes in the tetragonal ThCr 2Si 2-type structure. The ρ(T) data indicate semiconducting behaviors for both compounds with activation energies of ≳0.35 eV for SrMn 2Sb 2 and 0.16 eV for BaMn 2Sb 2. The χ(T) andmore » C p(T) data reveal antiferromagnetic (AFM) ordering at T N = 110 K for SrMn 2Sb 2 and 450 K for BaMn 2Sb 2. The anisotropic χ(T≤T N) data also show that the ordered moments in SrMn 2Sb 2 are aligned in the hexagonal ab plane, whereas the ordered moments in BaMn 2Sb 2 are aligned collinearly along the tetragonal c axis. The ab-plane M(H) data for SrMn 2Sb 2 exhibit a continuous metamagnetic transition at low fields 02Sb 2 exhibits no metamagnetic transitions up to 5.5 T. The χ(T) and C p(T) data for both SrMn 2Sb 2 and BaMn 2Sb 2 indicate strong dynamic short-range AFM correlations above their respective T N up to at least 900 K within a local-moment picture, corresponding to quasi-two-dimensional magnetic behavior. The present results and a survey of the literature for Mn pnictides with the CaAl 2Si 2 and ThCr 2Si 2 crystal structures show that the T N values for the CaAl 2Si 2-type compounds are much smaller than those for the ThCr 2Si 2-type materials.« less

Antiferromagnetism in semiconducting SrMn2Sb2 and BaMn2Sb2 single crystals

NASA Astrophysics Data System (ADS)

Sangeetha, N. S.; Smetana, V.; Mudring, A.-V.; Johnston, D. C.

2018-01-01

Crystals of SrMn2Sb2 and BaMn2Sb2 were grown using Sn flux and characterized by powder and single-crystal x-ray diffraction, respectively, and by single-crystal electrical resistivity ρ , heat capacity Cp, and magnetic susceptibility χ measurements versus temperature T , and magnetization versus field M (H ) isotherm measurements. SrMn2Sb2 adopts the trigonal CaAl2Si2 -type structure, whereas BaMn2Sb2 crystallizes in the tetragonal ThCr2Si2 -type structure. The ρ (T ) data indicate semiconducting behaviors for both compounds with activation energies of ≳0.35 eV for SrMn2Sb2 and 0.16 eV for BaMn2Sb2 . The χ (T ) and Cp(T ) data reveal antiferromagnetic (AFM) ordering at TN = 110 K for SrMn2Sb2 and 450 K for BaMn2Sb2 . The anisotropic χ (T ≤TN) data also show that the ordered moments in SrMn2Sb2 are aligned in the hexagonal a b plane, whereas the ordered moments in BaMn2Sb2 are aligned collinearly along the tetragonal c axis. The a b -plane M (H ) data for SrMn2Sb2 exhibit a continuous metamagnetic transition at low fields 0 Sb2 exhibits no metamagnetic transitions up to 5.5 T. The χ (T ) and C p(T ) data for both SrMn2Sb2 and BaMn2Sb2 indicate strong dynamic short-range AFM correlations above their respective TN up to at least 900 K within a local-moment picture, corresponding to quasi-two-dimensional magnetic behavior. The present results and a survey of the literature for Mn pnictides with the CaAl2Si2 and ThCr2Si2 crystal structures show that the TN values for the CaAl2Si2 -type compounds are much smaller than those for the ThCr2Si2 -type materials.

Ab initio study of thermoelectric properties of doped SnO{sub 2} superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borges, P.D., E-mail: pdborges@gmail.com; Silva, D.E.S.; Castro, N.S.

2015-11-15

Transparent conductive oxides, such as tin dioxide (SnO{sub 2}), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO{sub 2}, as well as of Sb and Zn planar (or delta)-doped layers in SnO{sub 2} forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modificationmore » in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO{sub 2} SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO{sub 2}-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO{sub 2} superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.« less

Effects of High-Temperature Treatment on the Reaction Between Sn-3%Ag-0.5%Cu Solder and Sputtered Ni-V Film on Ferrite Substrate

NASA Astrophysics Data System (ADS)

Shen, Xiaohu; Jin, Hao; Dong, Shurong; Wong, Hei; Zhou, Jian; Guo, Zhaodi; Wang, Demiao

2012-11-01

We have demonstrated a novel sputtering method for lead-free thin metal films on ferrite substrates for surface-mount inductor applications. In a surface-mounting process, the cladding of enameled wire needs to be burnt off at high temperature, which requires the devices to withstand a high-temperature reliability test at 420°C for 10 s. There are no reports that a sputtered film of thickness less than 6 μm can withstand this test. In this work, we used Ag/Ni-7 wt.%V double metal layers for the metallization. The dissolution of Ni-7 wt.%V in Sn-3%Ag-0.5%Cu lead-free solder at various temperatures was studied in detail. Scanning electron microscopy with energy-dispersive x-ray spectroscopy was used to investigate the interfacial reaction between the sputtered films and the solder. The intermetallic compounds are mainly (Cu,Ni)6Sn5 at 250°C; however, (Ni,Cu)3Sn4 becomes the predominant composition at 420°C. In addition, although outdiffusion of V atoms from the Ni-V layer was observed, its effect on the intermetallic compound (IMC) was insignificant. We further confirmed that the proposed metallization is able to pass the aforementioned high-temperature reliability test.

Multistage hydrothermal silicification and Fe-Tl-As-Sb-Ge-REE enrichment in the Red Dog Zn-Pb-Ag district, northern Alaska: Geochemistry, origin, and exploration applications

USGS Publications Warehouse

Slack, J.F.; Kelley, K.D.; Anderson, V.M.; Clark, J.L.; Ayuso, R.A.

2004-01-01

Geochemical analyses of major, trace, and rare earth elements (REE) in more than 200 samples of variably silicified and altered wall rocks, massive and banded sulfide, silica rock, and sulfide-rich and unmineralized barite were obtained from the Main, Aqqaluk, and Anarraaq deposits in the Red Dog Zn-Pb-Ag district of northern Alaska. Detailed lithogeochemical profiles for two drill cores at Aqqaluk display an antithetic relationship between SiO2/Al2O3 and TiO2/Zr which, together with textural information, suggest preferential silicification of carbonate-bearing sediments. Data for both drill cores also show generally high Tl, Sb, As, and Ge and uniformly positive Eu anomalies (Eu/Eu* > 1.0). Similar high Tl, Sb, As, Ge, and Eu/Eu* values are present in the footwall and shallow hanging wall of Zn-Pb-Ag sulfide intervals at Anarraaq but are not as widely dispersed. Net chemical changes for altered wall rocks in the district, on the basis of average Al-normalized data relative to unaltered black shales of the host Kuna Formation, include large enrichments (>50%) of Fe, Ba, Eu, V, S, Co, Zn, Pb, Tl, As, Sb, and Ge at both Red Dog and Anarraaq, Si at Red Dog, and Sr, U, and Se at Anarraaq. Large depletions (>50%) are evident for Ca at both Red Dog and Anarraaq, for Mg, P, and Y at Red Dog, and for Na at Anarraaq. At both Red Dog and Anarraaq, wall-rock alteration removed calcite and minor dolomite during hydrothermal decarbonation reactions and introduced Si, Eu, and Ge during silicification. Sulfidation reactions deposited Fe, S, Co, Zn, Pb, Tl, As, and Sb; barite mineralization introduced Ba, S, and Sr. Light REE and U were mobilized locally. This alteration and mineralization occurred during Mississippi an hydrothermal events that predated the Middle Jurassic-Cretaceous Brookian orogeny. Early hydrothermal silicification at Red Dog took place prior to or during massive sulfide mineralization, on the basis of the dominantly planar nature of Zn-Pb veins, which suggests

Quantitative characterization of brazing performance for Sn-plated silver alloy fillers

NASA Astrophysics Data System (ADS)

Wang, Xingxing; Peng, Jin; Cui, Datian

2017-12-01

Two types of AgCuZnSn fillers were prepared based on BAg50CuZn and BAg34CuZnSn alloy through a combinative process of electroplating and thermal diffusion. The models of wetting entropy and joint strength entropy of AgCuZnSn filler metals were established. The wetting entropy of the Sn-plated silver brazing alloys are lower than the traditional fillers, and its joint strength entropy value is slightly higher than the latter. The wetting entropy value of the Sn-plated brazing alloys and traditional filler metal are similar to the change trend of the wetting area. The trend of the joint strength entropy value with those fillers are consisted with the tensile strength of the stainless steel joints with the increase of Sn content.

Electromigration Critical Product to Measure Effect of Underfill Material in Suppressing Bi Segregation in Sn-58Bi Solder

NASA Astrophysics Data System (ADS)

Zhao, Xu; Takaya, Satoshi; Muraoka, Mikio

2017-08-01

Recently, we detected length-dependent electromigration (EM) behavior in Sn-58Bi (SB) solder and revealed the existence of Bi back-flow, which retards EM-induced Bi segregation and is dependent on solder length. The cause of the back-flow is attributed to an oxide layer formed on the SB solder. At present, underfill (UF) material is commonly used in flip-chip packaging as filler between chip and substrate to surround solder bumps. In this study, we quantitatively investigated the effect of UF material as a passivation layer on EM in SB solder strips. EM tests on SB solder strips with length of 50 μm, 100 μm, and 150 μm were conducted simultaneously. Some samples were coated with commercial thermosetting epoxy UF material, which acted as a passivation layer on the Cu-SB-Cu interconnections. The value of the critical product for SB solder was estimated to be 38 A/cm to 43 A/cm at 353 K to 373 K without UF coating and 59 A/cm at 373 K with UF coating. The UF material acting as a passivation layer suppressed EM-induced Bi segregation and increased the threshold current density by 37% to 55%. However, at very high current density, this effect became very slight. In addition, Bi atoms can diffuse to the anode side through the Sn phase, hence addition of microelements to the Sn phase to form obstacles, such as intermetallic compounds, may retard Bi segregation in SB solder.

Enhanced hydrogen storage capacity of Ni/Sn-coated MWCNT nanocomposites

NASA Astrophysics Data System (ADS)

Varshoy, Shokufeh; Khoshnevisan, Bahram; Behpour, Mohsen

2018-02-01

The hydrogen storage capacity of Ni-Sn, Ni-Sn/multi-walled carbon nanotube (MWCNT) and Ni/Sn-coated MWCNT electrodes was investigated by using a chronopotentiometry method. The Sn layer was electrochemically deposited inside pores of nanoscale Ni foam. The MWCNTs were put on the Ni-Sn foam with nanoscale porosities using an electrophoretic deposition method and coated with Sn nanoparticles by an electroplating process. X-ray diffraction and energy dispersive spectroscopy results indicated that the Sn layer and MWCNTs are successfully deposited on the surface of Ni substrate. On the other hand, a field-emission scanning electron microscopy technique revealed the morphology of resulting Ni foam, Ni-Sn and Ni-Sn/MWCNT electrodes. In order to measure the hydrogen adsorption performed in a three electrode cell, the Ni-Sn, Ni-Sn/MWCNT and Ni/Sn-coated MWCNT electrodes were used as working electrodes whereas Pt and Ag/AgCl electrodes were employed as counter and reference electrodes, respectively. Our results on the discharge capacity in different electrodes represent that the Ni/Sn-coated MWCNT has a maximum discharge capacity of ˜30 000 mAh g-1 for 20 cycles compared to that of Ni-Sn/MWCNT electrodes for 15 cycles (˜9500 mAh g-1). By increasing the number of cycles in a constant current, the corresponding capacity increases, thereby reaching a constant amount for 20 cycles.

The Krásná Hora, Milešov, and Příčovy Sb-Au ore deposits, Bohemian Massif: mineralogy, fluid inclusions, and stable isotope constraints on the deposit formation

NASA Astrophysics Data System (ADS)

Němec, Matěj; Zachariáš, Jiří

2018-02-01

The Krásná Hora-Milešov and Příčovy districts (Czech Republic) are the unique examples of Sb-Au subtype orogenic gold deposits in the Bohemian Massif. They are represented by quartz-stibnite veins and massive stibnite lenses grading into low-grade, disseminated ores in altered host rocks. Gold postdates the stibnite and is often replaced by aurostibite. The ore zones are hosted by hydrothermally altered dikes of lamprophyres (Krásná Hora-Milešov) or are associated with local strike-slip faults (Příčovy). Formation of Sb-Au deposits probably occurred shortly after the main gold-bearing event (348-338 Ma; Au-only deposits) in the central part of the Bohemian Massif. Fluid inclusion analyses suggest that stibnite precipitated at 250 to 130 °C and gold at 200 to 130 °C from low-salinity aqueous fluids. The main quartz gangue hosting the ore precipitated from the same type of fluid at about 300 °C. Early quartz-arsenopyrite veins are not associated with the Sb-Au deposition and formed from low-salinity, aqueous-carbonic fluid at higher pressure and temperature ( 250 MPa, 400 °C). The estimated oxygen isotope composition of the ore-bearing fluid (4 ± 1‰ SMOW; based on post-ore calcite) suggests its metamorphic or mixed magmatic-metamorphic origin and excludes the involvement of meteoric water. Rapid cooling of warm hydrothermal fluids reacting with "cold" host rock was probably the most important factor in the formation of both stibnite and gold.

Mineralogy, fluid inclusion petrography, and stable isotope geochemistry of Pb-Zn-Ag veins at the Shizhuyuan deposit, Hunan Province, southeastern China

NASA Astrophysics Data System (ADS)

Wu, Shenghua; Mao, Jingwen; Yuan, Shunda; Dai, Pan; Wang, Xudong

2018-01-01

The Shizhuyuan polymetallic deposit is located in the central part of the Nanling region, southeastern China, and consists of proximal W-Sn-Mo-Bi skarns and greisens and distal Pb-Zn-Ag veins. The sulfides and sulfosalts in the distal veins formed in three distinct stages: (1) an early stage of pyrite and arsenopyrite, (2) a middle stage of sphalerite and chalcopyrite, and (3) a late stage of galena, Ag-, Sn-, and Bi-bearing sulfides and sulfosalts, and pyrrhotite. Combined sulfide and sulfosalt geothermometry and fluid inclusion analyses indicate that the early stage of mineralization occurred at a temperature of 400 °C and involved boiling under hydrostatic pressure ( 200 bar), with the temperature of the system dropping during the late stage to 200 °C. Laser Raman analysis indicates that the fluid inclusions within the studied minerals are dominated by H2O, although some contain carbonate solids and CH4 gas. Vein-hosted sulfides have δ34S values of 3.8-6.3‰ that are interpreted as indicative of a magmatic source of sulfur. The mineralization process can be summarized as follows: an aqueous fluid exsolved on final crystallization of the Qianlishan pluton, ascended along fracture zones, cooled to <400 °C, and boiled under hydrostatic conditions, and with decreasing temperature and sulfur fugacity, sulfide and sulfosalt minerals precipitated successively from the Ag-Cu-Zn-Fe-Pb-Sb-As-S-bearing fluid system.

Toward a mechanistic understanding of the damage evolution of SnAgCu solder joints in accelerated thermal cycling test

NASA Astrophysics Data System (ADS)

Mahin Shirazi, Sam

Accelerated thermal cycling (ATC) tests are the most commonly used tests for the thermo-mechanical performance assessment of microelectronics assemblies. Currently used reliability models have failed to incorporate the microstructural dependency of lead free solder joint behavior and its microstructure evolution during cycling. Thus, it is essential to have a mechanistic understanding of the effect of cycling parameters on damage evolution and failure of lead free solder joints in ATC. Recrystallization has been identified as the damage rate controlling mechanism in ATC. Usually it takes 1/3 of life for completion of recrystallization regardless of cycling parameters. Thus, the life of the solder joints can be predicted by estimating global recrystallization. The objective of the first part of the study was to examine whether the damage scenario applies in service is the same as the harsh thermal cycling tests (i.e. 0/100 °C and -40/125 °C) commonly used in industry. Microstructure analysis results on a variety of lead free solder SnAgCu assemblies subjected to the both harsh (0/100 °C) and mild (20/80 °C) ATC confirmed similar failure mechanism under the both testing conditions. Sn grain morphology (interlaced versus beach ball) has a significant effect on the thermo-mechanical performance (and thus the model) of the lead free solder joints. The longer thermal cycling lifetime observed in the interlaced solder joints subjected to the ATC compared to the beach ball structure was correlated to the different initial microstructure and the microstructure evolution during cycling. For the modeling proposes, the present study was focused on Sn-Ag-Cu solder joints with either a single Sn grain or beach ball structure. Microstructural analysis results of the simulated thermal cycling experiment revealed that, the life can be approximated as determined by the accumulation of a certain amount of work during the high temperature dwells. Finally the effect of precipitates

Indentation Size Effect on the Creep Behavior of a SnAgCu Solder

NASA Astrophysics Data System (ADS)

Han, Y. D.; Jing, H. Y.; Nai, S. M. L.; Xu, L. Y.; Tan, C. M.; Wei, J.

In the present study, nanoindentation studies of the 95.8Sn-3.5Ag-0.7Cu lead-free solder were conducted over a range of maximum loads from 20 mN to 100 mN, under a constant ramp rate of 0.05 s-1. The indentation scale dependence of creep behavior was investigated. The results revealed that the creep rate, creep strain rate and indentation stress are all dependent on the indentation depth. As the maximum load increased, an increasing trend in the creep rate was observed, while a decreasing trend in creep strain rate and indentation stress were observed. On the contrary, for the case of stress exponent value, no trend was observed and the values were found to range from 6.16 to 7.38. Furthermore, the experimental results also showed that the creep mechanism of the lead-free solder is dominated by dislocation climb.

Probing long-range structural order in SnPc/Ag(111) by umklapp process assisted low-energy angle-resolved photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Jauernik, Stephan; Hein, Petra; Gurgel, Max; Falke, Julian; Bauer, Michael

2018-03-01

Laser-based angle-resolved photoelectron spectroscopy is performed on tin-phthalocyanine (SnPc) adsorbed on silver Ag(111). Upon adsorption of SnPc, strongly dispersing bands are observed which are identified as secondary Mahan cones formed by surface umklapp processes acting on photoelectrons from the silver substrate as they transit through the ordered adsorbate layer. We show that the photoemission data carry quantitative structural information on the adsorbate layer similar to what can be obtained from a conventional low-energy electron diffraction (LEED) study. More specifically, we compare photoemission data and LEED data probing an incommensurate-to-commensurate structural phase transition of the adsorbate layer. Based on our results we propose that Mahan-cone spectroscopy operated in a pump-probe configuration can be used in the future to probe structural dynamics at surfaces with a temporal resolution in the sub-100-fs regime.

Electromigration in Sn-Cu intermetallic compounds

NASA Astrophysics Data System (ADS)

Wei, C. C.; Chen, C. F.; Liu, P. C.; Chen, Chih

2009-01-01

As the shrinking in bump size continues, the effect of intermetallic compounds (IMCs) on electromigration becomes more pronounced. Electromigration in Sn-Cu intermetallic compounds was examined using edge displacement method. It was found that Cu6Sn5 compounds are more susceptible to electromigration than Cu3Sn compounds. The lower solidus temperature and higher resistivity of the Cu6Sn5 IMCs are responsible for its higher electromigration rate. Length-dependent electromigration behavior was found in the stripes of various lengths and the critical length was determined to be between 5 and 10 μm at 225 °C, which corresponded to a critical product between 2.5 and 5 A/cm. Furthermore, the Sn-Cu compounds were proven to have better electromigration resistance than eutectic SnAgCu solder.

Multiscale microstructures and improved thermoelectric performance of Mg2(Si0.4Sn0.6)Sbx solid solutions

NASA Astrophysics Data System (ADS)

Zhang, Xin; Liu, Hongliang; Li, Songhao; Zhang, Feipeng; Lu, Qingmei; Li, Jingfeng

2014-03-01

A series of Sb-doped Mg2(Si0.4Sn0.6)Sbx (0 ≤ x ≤ 0.025) solid solutions were prepared by an induction melting, Melt Spinning (MS) and Spark Plasma Sintering (SPS) method, namely the non-equilibrium technique MS-SPS, using bulks of Magnesium, Silicon, Tin, and Antimony as raw materials. The non-equilibrium technique generates the unique multiscale microstructures of samples containing micronscale grains and nanoscale precipitates, the multiscale microstructures remarkably make the lattice thermal conductivities decreased, particularly for samples with the nanoscale precipitates having the size of 10-20 nm. Meanwhile, Sb-doping greatly increased the electrical performance of samples. Consequently, the Sb-doping combined with the multiscale microstructures strategy remarkably improves the overall thermoelectric (TE) performance of Sb doped samples, and a high dimensionless figure of merit (ZT) value of up to 1.25 at 723 K is obtained with Mg2(Si0.4Sn0.6)Sb0.02 sample in a relatively wide temperature range.

Probing the distribution and contamination levels of 10 trace metal/metalloids in soils near a Pb/Zn smelter in Middle China.

PubMed

Li, Zhonggen; Feng, Xinbin; Bi, Xiangyang; Li, Guanghui; Lin, Yan; Sun, Guangyi

2014-03-01

The horizontal and vertical distribution patterns and contamination status of ten trace metal/metalloids (Ag, Bi, Co, Cr, Ge, In, Ni, Sb, Sn, Tl) in soils around one of the largest Chinese Pb-Zn smelter in Zhuzhou City, Central China, were revealed. Different soil samples were collected from 11 areas, including ten agricultural areas and one city park area, with a total of 83 surface soil samples and six soil cores obtained. Trace metal/metalloids were determined by inductively coupled plasma-mass spectrometry after digestion by an acid mixture of HF and HNO3. The results showed that Ag, Bi, In, Sb, Sn, and Tl contents decreased both with the distance to the Pb-Zn smelter as well as the soil depth, hinting that these elements were mainly originated from the Pb-Zn smelting operations and were introduced into soils through atmospheric deposition. Soil Ge was influenced by the smelter at a less extent, while the distributions of Co, Cr, and Ni were roughly even among most sampling sites and soil depths, suggesting that they were primarily derived from natural sources. The contamination status, as revealed by the geo-accumulation index (I geo), indicated that In and Ag were the most enriched elements, followed by Sb, Bi, and Sn. In general, Cr, Tl, Co, Ni, and Ge were of an uncontaminated status.

Geochemistry of the Patricia Zn-Pb-Ag Deposit (paguanta, NE Chile)

NASA Astrophysics Data System (ADS)

Chinchilla Benavides, D.; Merinero Palomares, R.; Piña García, R.; Ortega Menor, L.; Lunar Hernández, R.

2013-12-01

The Patricia Zn-Pb-Ag ore deposit is located within the Paguanta mining project, situated at the northern end of the Andean Oligocene Porphyry Copper Belt of Chile. The sulfide mineralization occurs as W-E oriented veins hosted in volcanic rocks, mainly andesite (pyroclastic, ash and lavas), of Upper Cretaceous to Middle Tertiary age. The ore mineralogy (obtained by EMPA analyses) comprises in order of abundance, pyrite, sphalerite (5.5 - 10.89 wt % Fe, 9.8-19 % molar FeS and 0.52 wt % Cd), galena, arsenopyrite, chalcopyrite and Ag-bearing sulfosalts. The veins show a zoned and banded internal structure with pyrite at the edges and sphalerite in the center. The Ag occurs mostly as Ag-Cu-Sb sulfosalts, in order of abundance: series freibergite - argentotennantite -polybasite and stephanite. Other minor Ag phases such as argentite, pyrargirite and diaphorite were also identified. These Ag phases are typically associated with the base-metal sulfides. Freibergite occurs filling voids within sphalerite, chalcopyrite and at the contact between sphalerite and galena. Polybasite, stephanite, pyrargirite and argentite are mostly in close association with freibergite. In the case of diaphorite, it commonly occurs filling voids between galena crystals or as inclusions within galena. Some minor Ag-bearing sulfosalts are also identified between pyrite crystals. The alteration minerals are dominated by chlorite, illite and kaolinite. The gangue minerals consist of quartz and carbonates identified by XRD as kutnahorite. We obtained linear correlation statistically significant only for Ag, As Au, Cd, Cu, Pb, Sb and Zn and therefore we generated an enhanced scatter plot matrix of these elements. Bulk rock analyses (ICP/MS and XRF) of drill cores show that Ag is strongly and positively correlated with Pb and As, moderately with Cd, Sb, Au and Zn and weakly with Cu, while Au is moderately and positively correlated with Ag, As, Cd, Sb and Zn and weakly with Cu and Pb. These results

Observation of GaSe-SnO2 Heterostructure by XPS and AES

NASA Astrophysics Data System (ADS)

Tatsuyama, Chiei; Ichimura, Shoji; Iwakuro, Hiroaki

1982-01-01

The depth profile of the elemental composition of the GaSe-SnO2 heterostructure has been studied by XPS and AES. The SnO2 layer was prepared by spraying a solution of SnCl4 and SbCl3 in ethyl alcohol on to the the cleaved surface of GaSe heated to ˜400°C in air. After the solution had been sprayed on for about 5 secs., an SnO2 layer of thickness ˜460 Å formed, and a Ga2O3 layer of thickness ˜120 Å formed under the SnO2 layer. The Ga2O3 layer is a likely origin of the high-resistivity layer observed in the GaSe-SnO2 heterostructure.

Structure of sup 118 Sb nucleus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gulyas, J.; Fenyes, T.; Fayez, M.

1992-10-01

{gamma}, {gamma}{gamma}-coincidence, internal conversion electron, and {gamma}-ray angular distribution spectra of the {sup 118}Sn({ital p},{ital n}{gamma}){sup 118}Sb reaction were measured at different bombarding proton energies between 5.5 and 7.5 MeV. {gamma}, {gamma}{gamma}-coincidence, and internal conversion electron spectra of the {sup 115}In ({alpha},{ital n}{gamma}){sup 118}Sb reaction were also measured at {ital E}{sub {alpha}}=14.5 MeV. Ge(HP), Ge(Li), Ge(LEPS) {gamma}-ray detectors, as well as a superconducting magnetic lens electron spectrometer (with Si(Li) detectors), were used in the experiments. About 210 (including {similar to}130 new) {gamma} rays have been assigned to {sup 118}Sb. The deduced {sup 118}Sb level scheme contains more than 70 newmore » levels. On the basis of the internal conversion coefficients, Hauser-Feshbach analysis of ({ital p},{ital n}) reaction cross sections, {gamma}-ray angular distributions, and other arguments spin and parity values have been determined. The parabolic rule'' prediction of the energy splitting of different proton-neutron multiplets enabled the identification of many proton-neutron multiplet states. The energy spectrum and electromagnetic properties have been calculated in the framework of the interacting boson-fermion-fermion--odd-odd truncated quadrupole phonon model, and reasonably good agreement has been obtained between experimental and theoretical results.« less

K{sub 2}Mg{sub 5-x}Sn{sub 3} and K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, pb) with two types of Mg-Sn/Pb frameworks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lei, Xiao-Wu, E-mail: xwlei10@163.co

2011-04-15

K{sub 2}Mg{sub 5-x}Sn{sub 3} (x=0.28) and K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, Pb) have been synthesized by reacting the mixture of the corresponding pure elements at high temperature, and structurally characterized by single-crystal X-ray diffraction studies. K{sub 2}Mg{sub 5-x}Sn{sub 3} (x=0.28) is isostructural with Ni{sub 7-x}SbQ{sub 2} (Q=Se, Te) series and features 2D corrugated [Mg{sub 5-x}Sn{sub 3}] layers that are separated by K{sup +} cations. The structure of K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, Pb) is closely related to the Ho{sub 2}Rh{sub 12}As{sub 7} structural type and features 3D [Mg{sub 18}Tt{sub 11}] framework composed of 1D [Mg{sub 18}Tt{sub 11}] columns that aremore » interconnected via Mg-Tt bonds, forming 1D hexagonal tunnels occupied by the K+ cations. Electronic structure calculations indicate that Mg atoms can function as either electron donor or as a participator in the network along with Tt atoms. Magnetic property measurements and band structure calculations indicate that these compounds are metallic. -- Graphical abstract: Two new K-Mg-Tt phases, K{sub 2}Mg{sub 5-x}Sn{sub 3} (x=0.28) and K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, Pb), have been synthesized and structurally characterized. K{sub 2}Mg{sub 5-x}Sn{sub 3} is isostructural with Ni{sub 7-x}SbQ{sub 2} (Q=Se, Te) and features a 2D corrugated [Mg{sub 5}Sn{sub 3}] layer that is separated by K{sup +} cations, and K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, Pb) is closely related to the Ho{sub 2}Rh{sub 12}As{sub 7} structure type and features a 3D [Mg{sub 18}Tt{sub 11}] network with 1D hexagonal tunnels along the c-axis occupied by K{sup +} cations. Display Omitted Research highlights: Two new polar intermetallics, K{sub 2}Mg{sub 5-x}Sn{sub 3} (x=0.28) and K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, Pb). Electronic structure calculations were performed by both TB-LMTO and EHTB methods. Mg atom can function as either electron donor or participator in the network.« less

Fabrication of Cu-Ni mixed phase layer using DC electroplating and suppression of Kirkendall voids in Sn-Ag-Cu solder joints

NASA Astrophysics Data System (ADS)

Chee, Sang-Soo; Lee, Jong-Hyun

2014-05-01

A solderable layer concurrently containing Cu-rich and Ni-rich phases (mixed-phase layer, MPL) was fabricated by direct current electroplating under varying process conditions. Current density was considered as the main parameter to adjust the microstructure and composition of MPL during the electroplating process, and deposit thickness were evaluated as functions of plating time. As a result, it was observed that the coral-like structure that consisted of Cu-rich and Ni-rich phases grew in the thickness direction. The most desirable microstructure was obtained at a relatively low current density of 0.4 mA/cm2. In other words, the surface was the smoothest and defect-free at this current density. The electroplating rate was slightly enhanced with an increase in current density. Investigations of its solid-state reaction properties, including the formation of Kirkendall voids, were also carried out after reflow soldering with Sn-3.0 Ag-0.5 Cu solder balls. In the solid-state aging experiment at 125°C, Kirkendall voids at the normal Sn-3.0 Ag-0.5 Cu solder/Cu interface were easily formed after just 240 h. Meanwhile, the presence of an intermetallic compound (IMC) layer created in the solder/MPL interface indicated a slightly lower growth rate, and no Kirkendall voids were observed in the IMC layer even after 720 h.

Nanostructured SnSe: Synthesis, doping, and thermoelectric properties

NASA Astrophysics Data System (ADS)

Liu, Shuhao; Sun, Naikun; Liu, Mei; Sucharitakul, Sukrit; Gao, Xuan P. A.

2018-03-01

IV-VI monochalcogenide SnSe or SnS has recently been proposed as a promising two-dimensional (2D) material for valleytronics and thermoelectrics. We report the synthesis of SnSe nanoflakes and nanostructured thin films with chemical vapor deposition method and their thermoelectric properties. As grown SnSe nanostructures are found to be intrinsically p-type and the single SnSe nanoflake field effect transistor was fabricated. By Ag doping, the power factor of SnSe nanostructured thin films can be improved by up to one order of magnitude compared to the "intrinsic" as grown materials. Our work provides an initial step in the pursuit of IV-VI monochalcogenides as novel 2D semiconductors for electronics and thermoelectrics.

Synthesis and Optimization of Thermoelectric Properties of Zn(x)Sb3

NASA Technical Reports Server (NTRS)

Doan-Nguyen, Vicky V.

2005-01-01

High-performance thermoelectric materials are studied to investigate their abilities to optimize electrical and minimize thermal conductivities. A stoichiometric range of p-type zinc antimonide compounds was synthesized to analyze the trends in their thermoelectric properties. Zn(x)Sb3 (x=3.80, 3.85, 3.90, 3.95, 4.00, 4.05, 4.10) was reacted at 750 C and annealed at 300 C for 24 hours at each temperature. Electronic transport properties such as Seebeck and Hall Effect were measured to analyze possible trends in the set of compositions. SEM, EDS, and XRD were used to quantify both ingots and hot-pressed samples to confirm that they were single-phase and of the expected stoichiometries. Recent SEM data indicated that Zn(3.90)Sb3 and Zn(4.00)Sb3 samples were actually Zn3Sb2. In hopes of further improving the figure-of-merit (ZT) of the binary system, V, Cr, Mn, Fe, Co, In, and Sn were used to dope (Zn(0.95)M(0.05))(3.95)Sb3.

Finite Element-Assisted Assessment of the Thermo-cyclic Characteristics of Leads Soldered with SnAgCu(+Bi,In) Alloys

NASA Astrophysics Data System (ADS)

Lis, Adrian; Nakanishi, Kohei; Matsuda, Tomoki; Sano, Tomokazu; Minagawa, Madoka; Okamoto, Masahide; Hirose, Akio

2017-07-01

Solder joints between leads and printed circuit boards in thin small outline packages were produced with conventional Sn1.0Ag0.7Cu (SAC107) and Sn3.0Ag0.7Cu (SAC305) solders as well as various solder alloys with gradually increasing amounts of Bi (up to 3.0 wt.%) and In (up to 1.0 wt.%) within the SAC107 base solder. The reliability of soldered leads in temperature cycle (TC) tests improved most with solder alloys containing both Bi (1.6 wt.%) and In (0.5 wt.%). Microindentation and electron probe microanalysis mappings revealed that the effect originates from a combination of solution and precipitation strengthening of the initial SAC alloy. The distribution of inelastic strain accumulation (ISA), as a measure for degradation, was determined in the solder joints by finite element calculations. It was shown that defects in the solder proximal to the lead (<60-75 μm) strongly impact the reliability and provoke crack initiation around the defect where the highest ISA is located. In particular, similar TC performance can be expected for defect-free joints and for those whose defects exceed the threshold distance from the lead (>60-75 μm), which was underpinned by similar cracking characteristics along the lead-solder interface. The ISA was confirmed to be lower in SAC+Bi/In alloys owing to their enhanced elasto-plastic properties. Moreover, the addition of a thin Cu coating on the leads could improve the joint reliability, as suggested by the calculation of the ISA and the acceleration factor.

Elemental Precursor Solution Processed (Cu1-xAgx)2ZnSn(S,Se)4 Photovoltaic Devices with over 10% Efficiency.

PubMed

Qi, Yafang; Tian, Qingwen; Meng, Yuena; Kou, Dongxing; Zhou, Zhengji; Zhou, Wenhui; Wu, Sixin

2017-06-28

The partial substitution of Cu + with Ag + into the host lattice of Cu 2 ZnSn(S,Se) 4 thin films can reduce the open-circuit voltage deficit (V oc,deficit ) of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. In this paper, elemental Cu, Ag, Zn, Sn, S, and Se powders were dissolved in solvent mixture of 1,2-ethanedithiol (edtH 2 ) and 1,2-ethylenediamine (en) and used for the formation of (Cu 1-x Ag x ) 2 ZnSn(S,Se) 4 (CAZTSSe) thin films with different Ag/(Ag + Cu) ratios. The key feature of this approach is that the impurity atoms can be absolutely excluded. Further results indicate that the variations of grain size, band gap, and depletion width of the CAZTSSe layer are generally determined by Ag substitution content. Benefiting from the V oc enhancement (∼50 mV), the power conversion efficiency is successfully increased from 7.39% (x = 0) to 10.36% (x = 3%), which is the highest efficiency of Ag substituted devices so far.

Controlling microstructure and mechanical properties of the new microelectronic interconnect alloys

NASA Astrophysics Data System (ADS)

Mutuku, Francis M.

An in-depth understanding of the physics of solidification could lead to the optimization of the properties of micro-electronic interconnects. Sn is the base material in the billions of interconnects in devices such as smart phones. These interconnects are formed by melting and solidifying a solder alloy (e.g. SnAgCu) in situ. But Sn has a low symmetry structure, Sn nucleation from the solder melt is complex and the morphology of the Sn and Sn alloys precipitates that form during solidification can vary tremendously (along with resultant mechanical properties). The effect of processing parameters on the solidification behavior, microstructure, and properties must be carefully addressed. Strong evidence adduced in this study shows that under many conditions, when cooling near eutectic SnAgCu from the melt, Ag3Sn nucleates before beta-Sn. The difficulty in the nucleation of beta-Sn provides a window of time between the nucleation of Ag3Sn precipitates and of beta-Sn solidification within which the Ag3Sn precipitate morphology can be manipulated. Thus distinct variations in precipitate number density, and inter-particle spacing were observed for different thermal histories, e.g. for different cooling rates. The average number density of Ag3Sn particles and the area of the pseudo-eutectic phase were observed to increase with increase in the Ag concentration, and with increase in the cooling rate. The shear strength and shear fatigue life increased with increase in the area fraction of the pseudo-eutectic phase. Upon aging of SnAgCu solder joints at an elevated temperature, the Ag3Sn particles coarsened, and became less effective in impeding dislocation motion. Consequently, the shear strength and shear fatigue performance degraded. On the other hand, alloys with constituents that formed solid solutions in Sn, such as small concentrations of Bi or Sb registered less degradation in both shear strength and shear fatigue life upon aging.

Topological surface state of α -Sn on InSb(001) as studied by photoemission

NASA Astrophysics Data System (ADS)

Scholz, M. R.; Rogalev, V. A.; Dudy, L.; Reis, F.; Adler, F.; Aulbach, J.; Collins-McIntyre, L. J.; Duffy, L. B.; Yang, H. F.; Chen, Y. L.; Hesjedal, T.; Liu, Z. K.; Hoesch, M.; Muff, S.; Dil, J. H.; Schäfer, J.; Claessen, R.

2018-02-01

We report on the electronic structure of the elemental topological semimetal α -Sn on InSb(001). High-resolution angle-resolved photoemission data allow us to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional p -type doping of the as-grown films was compensated by deposition of potassium or tellurium after the growth, thereby shifting the Dirac point of the surface state below the Fermi level. We show that, while having the potential to break time-reversal symmetry, iron impurities with a coverage of up to 0.25 monolayers do not have any further impact on the surface state beyond that of K or Te. Furthermore, we have measured the spin-momentum locking of electrons from the TSS by means of spin-resolved photoemission. Our results show that the spin vector lies fully in-plane, but it also has a finite radial component. Finally, we analyze the decay of photoholes introduced in the photoemission process, and by this gain insight into the many-body interactions in the system. Surprisingly, we extract quasiparticle lifetimes comparable to other topological materials where the TSS is located within a bulk band gap. We argue that the main decay of photoholes is caused by intraband scattering, while scattering into bulk states is suppressed due to different orbital symmetries of bulk and surface states.

New information on medium-spin structure of {sup 133}Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Urban, W.; Faculty of Physics, University of Warsaw, ul. Hoza 69, PL-00-681 Warsaw; Zlomaniec, A.

2009-03-15

Excited states in the nucleus {sup 133}Sb, populated in the fission of {sup 235}U induced by thermal neutrons were studied using the Lohengrin fission-fragment separator. A new 4191.8 keV level in {sup 133}Sb, populated in the decay of the 16.6 {mu}s isomer, was observed. The level is interpreted as the 11/2{sup +} member of the {pi}g{sub 7/2} x core configuration, predicted by the shell model at 4095 keV. Levels corresponding to octupole excitation of the {sup 132}Sn core, identified previously in prompt-{gamma} measurement, were now observed in the isomeric decay.

Quasi-equilibrium size distribution of subcritical nuclei in amorphous phase change AgIn-Sb2Te

NASA Astrophysics Data System (ADS)

Darmawikarta, Kristof; Lee, Bong-Sub; Shelby, Robert M.; Raoux, Simone; Bishop, Stephen G.; Abelson, John R.

2013-07-01

We investigate the effect of low temperature annealing or of extended storage at room temperature on the subsequent nucleation behavior of amorphous AgIn-incorporated Sb2Te (AIST), a material for phase change memories. Time-resolved reflectivity measurements during pulsed laser crystallization reveal the rates of solid-phase transformation, while fluctuation transmission electron microscopy detects the nanoscale order in the amorphous phase prior to crystallization. The nanoscale order is postulated to consist of subcritical nuclei that coarsen upon annealing at temperatures ranging from 25 °C (for months) or 100 °C (for hours). Samples that have been annealed remain fully amorphous as evaluated by conventional diffraction experiments. Shorter nucleation times are consistently associated with the observation of increased nanoscale order. The effect of annealing is observed to saturate: there is no further reduction in nucleation time or increase in nanoscale order for annealing at 100 °C beyond three hours. This result supports the general prediction of classical nucleation theory that the size distribution of subcritical nuclei increases from the as-deposited state to a quasi-equilibrium.

Effect of Ni addition to the Cu substrate on the interfacial reaction and IMC growth with Sn3.0Ag0.5Cu solder

NASA Astrophysics Data System (ADS)

Zhang, Xudong; Hu, Xiaowu; Jiang, Xiongxin; Li, Yulong

2018-04-01

The formation and growth of intermetallic compound (IMC) layer at the interface between Sn3.0Ag0.5Cu (SAC305) solder and Cu- xNi ( x = 0, 0.5, 1.5, 5, 10 wt%) substrate during reflowing and aging were investigated. The soldering was conducted at 270 °C using reflowing method, following by aging treatment at 150 °C for up to 360 h. The experimental results indicated that the total thickness of IMC increased with increasing aging time. The scallop-like Cu6Sn5 and planar-like Cu3Sn IMC layer were observed between SAC305 solder and purely Cu substrate. As the content of Ni element in Cu substrate was 0.5% or 1.5%, the scallop-like Cu6Sn5 and planar-like Cu3Sn IMC layer were still found between solder and Cu-Ni substrate and the total thickness of IMC layer decreased with the increasing Ni content. Besides, when the Ni content was up to 5%, the long prismatic (Cu,Ni)6Sn5 phase was the only product between solder and substrate and the total thickness of IMC layer increased significantly. Interestingly, the total thickness of IMC decreased slightly as the Ni addition was up to 10%. In the end, the grains of interfacial IMC layer became coarser with aging time increasing while the addition of Ni in Cu substrate could refine IMC grains.

Effect of Intermetallic on Electromigration and Atomic Diffusion in Cu/SnAg3.0Cu0.5/Cu Joints: Experimental and First-Principles Study

NASA Astrophysics Data System (ADS)

Zhou, Wei; Liu, Lijuan; Li, Baoling; Wu, Ping

2009-06-01

Electromigration phenomena in a one-dimensional Cu/SnAg3.0Cu0.5/Cu joint were investigated with current stressing. The special effect of intermetallic compound (IMC) layers on the formation of serious electromigration damage induced by nonuniform current density distribution was discussed based on experimental results. Meanwhile, hillocks were observed both at the anode and near the cathode of the joint, and they were described as the result of diffusion of atoms and compressive stress released along grain boundaries to the relatively free surface. Moreover, the diffusion behavior of Cu at the cathode was analyzed with the electromigration equation, and the stability of Ag atoms in the solder during electromigration was evaluated with a first-principles method.

Effect of Board Thickness on Sn-Ag-Cu Joint Interconnect Mechanical Shock Performance

NASA Astrophysics Data System (ADS)

Lee, Tae-Kyu; Xie, Weidong

2014-12-01

The mechanical stability of solder joints with Sn-Ag-Cu alloy joints on various board thicknesses was investigated with a high G level shock environment. A test vehicle with three different board thicknesses was used for board drop shock performance tests. These vehicles have three different strain and shock level condition couples per board, and are used to identify the joint stability and failure modes based on the board responses. The results revealed that joint stability is sensitive to board thickness. The board drop shock test showed that the first failure location shifts from the corner location near the standoff to the center with increased board thickness due to the shock wave response. From analysis of the thickness variation and failure cycle number, the strain rate during the pulse strain cycle is the dominant factor, which defines the life cycle number per board thickness, and not the maximum strain value. The failure location shift and the shock performance differentiation are discussed from the perspective of maximum principal strain, cycle frequency and strain rate per cycle.

Activation cross sections of alpha-induced reactions on natIn for 117mSn production

NASA Astrophysics Data System (ADS)

Aikawa, M.; Saito, M.; Ukon, N.; Komori, Y.; Haba, H.

2018-07-01

The production of 117mSn by charged-particle induced reactions is an interesting topic for medical application. Production cross sections of α-induced reactions on natIn for 117mSn up to 50 MeV were measured using the stacked foil technique and activation method. The integral yield of 117mSn was estimated using the measured cross sections. The results were compared with experimental data investigated earlier and theoretical calculation. Measured cross sections for 113Sn and 116m,117,118mSb isotopes were also presented.

Large-scale production of (GeTe) x (AgSbTe 2) 100$-$x (x=75, 80, 85, 90) with enhanced thermoelectric properties via gas-atomization and spark plasma sintering

DOE PAGES

Kim, Hyo-Seob; Ames Lab., Ames, IA; Dharmaiah, Peyala; ...

2017-01-30

(GeTe) x(AgSbTe 2) 100$-$x: TAGS thermoelectrics are an attractive class of materials due to their combination of non-toxicity and good conversion efficiency at mid-temperature ranges. Here in the present work, we have utilized energy and time efficient high-pressure gas atomization and spark-plasma sintering techniques for large-scale preparation of samples with varying composition (i.e., (GeTe) x(AgSbTe 2) 100$-$x where x = 75, 80, 85, and 90). High-temperature x-ray diffraction was used to understand the phase transformation mechanism of the as-atomized powders. Detailed high-resolution transmission electron microscopy of the sintered samples revealed the presence of nanoscale precipitates, antiphase, and twin boundaries. Themore » nanoscale twins and antiphase boundaries serve as phonon scattering centers, leading to the reduction of total thermal conductivity in TAGS-80 and 90 samples. The maximum ZT obtained was 1.56 at 623 K for TAGS-90, which was ~94% improvement compared to values previously reported. The presence of the twin boundaries also resulted in a high fracture toughness (K IC) of the TAGS-90 sample due to inhibition of dislocation movement at the twin boundary.« less

A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation)

NASA Astrophysics Data System (ADS)

Bellotti, Enrico; Wen, Hanqing; Dominici, Stefano; Glasmann, Andreu L.

2017-02-01

HgCdTe has been the material of choice for MWIR, and LWIR infrared sensing due to its highly tunable band gap and favorable material properties. However, HgCdTe growth and processing for the ESWIR spectral region is less developed, so alternative materials are actively researched. It is important to compare the fundamental limitations of each material to determine which offers optimal device performance. In this article, we investigate the intrinsic recombination mechanisms of ESWIR materials—InGaAs, GeSn, and HgCdTe—with cutoff wavelength near 2.5μm, and MWIR with cutoff of 5μm. First, using an empirical pseudo-potential model, we calculate the full band structure of each alloy using the virtual crystal approximation, modified to include disorder effects and spin-orbit coupling. We then evaluate the Auger and radiative recombination rates using a Green's function based model, applied to the full material band structure, yielding intrinsic carrier lifetimes for each given temperature, carrier injection, doping density, and cutoff wavelength. For example, we show that ESWIR HgCdTe has longer carrier lifetimes than InGaAs when strained or relaxed near room temperature, which is advantageous for high operating temperature photodetectors. We perform similar analyses for varying composition GeSn by comparing the calculated lifetimes with InGaAs and HgCdTe. Finally, we compare HgCdTe, InAsSb and GeSn with a cutoff in the MWIR spectral band.

One-pot, facile fabrication of a Ag3PO4-based ternary Z-scheme photocatalyst with excellent visible-light photoactivity and anti-photocorrosion performance

NASA Astrophysics Data System (ADS)

Xie, Mingyuan; Zhang, Tailiang

2018-04-01

Ag3PO4 can-not be widely used as an efficient photocatalyst in practical applications because of its susceptibility to photocorrosion. In this study, a novel, ternary Z-scheme photocatalytic system containing graphene oxide (GO), Ag3PO4 and SnS2 was fabricated by a one-pot, mild, in-situ precipitation method successfully. Using Rhodamine B (RhB) as the target of elimination, GO/Ag3PO4/SnS2 exhibited outstanding photocatalytic and anti-photocorrosion properties compared with those of Ag3PO4, Ag3PO4/SnS2 and GO/Ag3PO4. RhB was thoroughly degraded over the optimized GO/Ag3PO4/SnS2 nanocomposite after only 15 min under visible-light irradiation; this result is approximately 2.14, 3.33 and 5.83 times faster than that of GO/Ag3PO4, Ag3PO4/SnS2 and Ag3PO4, respectively. After three reuses, the photocatalytic activity of the ternary composite slightly decreased but remained 2.36, 4.08 and 12.70 times higher than those of the reused GO/Ag3PO4, Ag3PO4/SnS2 and Ag3PO4, respectively. In this system, the efficient separation and migration of the photoinduced current carriers in Ag3PO4 was realized through a double Z-scheme electron-transfer mechanism in which the GO nanosheets acted as the photocatalyst and electron mediator, thereby enhancing the photoactivity and stability of Ag3PO4. The present study provides a new perspective for enhancing photocatalytic and anti-photocorrosion performances in perishable photocatalysts for organic sewage and other environmental contamination treatments.

Adsorption, vibration and diffusion of oxygen on Ag(110)

NASA Astrophysics Data System (ADS)

Rawal, Takat; Hong, Sampyo; Pulkkinen, Aki; Alatalo, Matti; Rahman, Talat

2015-03-01

We have performed density functional theory calculations for the adsorption, vibration and diffusion of oxygen on Ag(110). At low coverage, O2 adsorbs at the four-fold hollow (FFH) with the molecular axis aligned along the [ 1 1 0 ] direction. The dissociation of O2 is easier along the [001] direction than along the [ 1 1 0 ] direction. For O2 species in FFH aligned along the [001] the O-O intra-molecular stretching mode is coupled with the substrate vibration and thus its dissociation can be induced by surface phonon. In addition, O diffusion barrier from FFH to next FFH along the [ 1 1 0 ] is small (0.07 eV only) but is by far larger (0.4 eV) along [001]. On the other hand, O species in the short-bride (SB) site prefers to diffuse along the [001] (to FFH) rather than along the [ 1 1 0 ] direction (to next SB). Finally, the preference of atomic oxygen to form O-Ag-O complex on Ag(110) is responsible for disordering of the surface by means of substantial lateral and vertical displacements of Ag atoms in the topmost layer. In fact, such disordering phase of Ag(110) may act as a precursor of the reconstructed phase of Ag(110). Work supported in part by NSF under Grant CHE-1310327.

Impact of Isothermal Aging on Long-Term Reliability of Fine-Pitch Ball Grid Array Packages with Sn-Ag-Cu Solder Interconnects: Surface Finish Effects

NASA Astrophysics Data System (ADS)

Lee, Tae-Kyu; Ma, Hongtao; Liu, Kuo-Chuan; Xue, Jie

2010-12-01

The interaction between isothermal aging and the long-term reliability of fine-pitch ball grid array (BGA) packages with Sn-3.0Ag-0.5Cu (wt.%) solder ball interconnects was investigated. In this study, 0.4-mm fine-pitch packages with 300- μm-diameter Sn-Ag-Cu solder balls were used. Two different package substrate surface finishes were selected to compare their effects on the final solder composition, especially the effect of Ni, during thermal cycling. To study the impact on thermal performance and long-term reliability, samples were isothermally aged and thermally cycled from 0°C to 100°C with 10 min dwell time. Based on Weibull plots for each aging condition, package lifetime was reduced by approximately 44% by aging at 150°C. Aging at 100°C showed a smaller impact but similar trend. The microstructure evolution was observed during thermal aging and thermal cycling with different phase microstructure transformations between electrolytic Ni/Au and organic solderability preservative (OSP) surface finishes, focusing on the microstructure evolution near the package-side interface. Different mechanisms after aging at various conditions were observed, and their impacts on the fatigue lifetime of solder joints are discussed.

Development of Ag-Pd-Au-Cu alloy for multiple dental applications. Part 1. Effects of Pd and Cu contents, and addition of Ga or Sn on physical properties and bond with ultra-low fusing ceramic.

PubMed

Goto, S; Miyagawa, Y; Ogura, H

2000-09-01

Ag-Pd-Au-Cu quaternary alloys consisting of 30-50% Ag, 20-40% Pd, 10-20% Cu and 20% Au (mother alloys) were prepared. Then 5% Sn or 5% Ga was added to the mother alloy compositions, and another two alloy systems (Sn-added alloys and Ga-added alloys) were also prepared. The bond between the prepared alloys and an ultra-low fusing ceramic as well as their physical properties such as the solidus point, liquidus point and the coefficient of thermal expansion were evaluated. The solidus point and liquidus point of the prepared alloys ranged from 802 degrees C to 1142 degrees C and from 931 degrees C to 1223 degrees C, respectively. The coefficient of thermal expansion ranged from 14.6 to 17.1 x 10(-6)/degrees C for the Sn- and Ga-added alloys. In most cases, the Pd and Cu contents significantly influenced the solidus point, liquidus point and coefficient of thermal expansion. All Sn- and Ga-added alloys showed high area fractions of retained ceramic (92.1-100%), while the mother alloy showed relatively low area fractions (82.3%) with a high standard deviation (20.5%). Based on the evaluated properties, six Sn-added alloys and four Ga-added alloys among the prepared alloys were suitable for the application of the tested ultra-low fusing ceramic.

Evaluating print performance of Sn-Ag-Cu lead-free solder pastes used in electronics assembly process

NASA Astrophysics Data System (ADS)

Mallik, S.; Bauer, R.; Hübner, F.; Ekere, N. N.

2011-01-01

Solder paste is the most widely used interconnection material in the electronic assembly process for attaching electronic components/devices directly onto the surface of printed circuit boards, using stencil printing process. This paper evaluates the performance of three different commercially available Sn-Ag-Cu solder pastes formulated with different particle size distributions (PSD), metal content and alloy composition. A series of stencil printing tests were carried out using a specially designed stencil of 75 μm thickness and apertures of 300×300 μm2 dimension and 500 μm pitch sizes. Solder paste printing behaviors were found related to attributes such as slumping and surface tension and printing performance was correlated with metal content and PSD. The results of the study should benefit paste manufacturers and SMT assemblers to improve their products and practices.

Exploring Ag(111) Substrate for Epitaxially Growing Monolayer Stanene: A First-Principles Study

PubMed Central

Gao, Junfeng; Zhang, Gang; Zhang, Yong-Wei

2016-01-01

Stanene, a two-dimensional topological insulator composed of Sn atoms in a hexagonal lattice, is a promising contender to Si in nanoelectronics. Currently it is still a significant challenge to achieve large-area, high-quality monolayer stanene. We explore the potential of Ag(111) surface as an ideal substrate for the epitaxial growth of monolayer stanene. Using first-principles calculations, we study the stability of the structure of stanene in different epitaxial relations with respect to Ag(111) surface, and also the diffusion behavior of Sn adatom on Ag(111) surface. Our study reveals that: (1) the hexagonal structure of stanene monolayer is well reserved on Ag(111) surface; (2) the height of epitaxial stanene monolayer is comparable to the step height of the substrate, enabling the growth to cross the surface step and achieve a large-area stanene; (3) the perfect lattice structure of free-standing stanene can be achieved once the epitaxial stanene monolayer is detached from Ag(111) surface; and finally (4) the diffusion barrier of Sn adatom on Ag(111) surface is found to be only 0.041 eV, allowing the epitaxial growth of stanene monolayer even at low temperatures. Our above revelations strongly suggest that Ag(111) surface is an ideal candidate for growing large-area, high-quality monolayer stanene. PMID:27373464

Effects of thermochemical treatment on CuSbS 2 photovoltaic absorber quality and solar cell reproducibility

DOE PAGES

de Souza Lucas, Francisco Willian; Welch, Adam W.; Baranowski, Lauryn L.; ...

2016-08-01

CuSbS 2 is a promising nontoxic and earth-abundant photovoltaic absorber that is chemically simpler than the widely studied Cu 2ZnSnS 4. However, CuSbS 2 photovoltaic (PV) devices currently have relatively low efficiency and poor reproducibility, often due to suboptimal material quality and insufficient optoelectronic properties. To address these issues, here we develop a thermochemical treatment (TT) for CuSbS 2 thin films, which consists of annealing in Sb 2S 3 vapor followed by a selective KOH surface chemical etch. The annealed CuSbS 2 films show improved structural quality and optoelectronic properties, such as stronger band-edge photoluminescence and longer photoexcited carrier lifetime.more » These improvements also lead to more reproducible CuSbS 2 PV devices, with performance currently limited by a large cliff-type interface band offset with CdS contact. Altogether, these results point to the potential avenues to further increase the performance of CuSbS 2 thin film solar cell, and the findings can be transferred to other thin film photovoltaic technologies.« less

New dielectric ceramics Pb(Cd)BiM/sup IV/SbO/sub 7/ (M/sup IV/ = Ti, Zr, Sn) with the pyrochlore structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lambachri, A.; Monier, M.; Mercurio, J.P.

1988-04-01

Dielectric ceramics have been obtained by natural sintering of pyrochlore phases with general formula Pb(Cd)BiM/sup IV/SbO/sub 7/ (M/sup IV/ = Ti, Zr, Sn). Low frequency dielectric characteristics have been studied with respect to the processing conditions: sintering without additive and in the presence of some low melting compounds (PbO, Pb/sub 5/Ge/sub 3/O/sub 11/, Bi/sub 12/PbO/sub 19/ and Bi/sub 12/CdO/sub 19/). The dielectric constants of these ceramics lie between 30 and 60, the dielectric losses range from 10 to 30.10/sup -4/ and the temperature coefficient of the dielectric constants (20 - 100/sup 0/C) can be tailored by means of additives inmore » the +- 30 ppm K/sup -1/ range.« less

Low Sound Velocity Contributing to the High Thermoelectric Performance of Ag8SnSe6

PubMed Central

Li, Wen; Lin, Siqi; Ge, Binghui; Yang, Jiong; Zhang, Wenqing

2016-01-01

Conventional strategies for advancing thermoelectrics by minimizing the lattice thermal conductivity focus on phonon scattering for a short mean free path. Here, a design of slow phonon propagation as an effective approach for high‐performance thermoelectrics is shown. Taking Ag8SnSe6 as an example, which shows one of the lowest sound velocities among known thermoelectric semiconductors, the lattice thermal conductivity is found to be as low as 0.2 W m−1 K−1 in the entire temperature range. As a result, a peak thermoelectric figure of merit zT > 1.2 and an average zT as high as ≈0.8 are achieved in Nb‐doped materials, without relying on a high thermoelectric power factor. This work demonstrates not only a guiding principle of low sound velocity for minimal lattice thermal conductivity and therefore high zT, but also argyrodite compounds as promising thermoelectric materials with weak chemical bonds and heavy constituent elements. PMID:27980995

Low Sound Velocity Contributing to the High Thermoelectric Performance of Ag8SnSe6.

PubMed

Li, Wen; Lin, Siqi; Ge, Binghui; Yang, Jiong; Zhang, Wenqing; Pei, Yanzhong

2016-11-01

Conventional strategies for advancing thermoelectrics by minimizing the lattice thermal conductivity focus on phonon scattering for a short mean free path. Here, a design of slow phonon propagation as an effective approach for high-performance thermoelectrics is shown. Taking Ag 8 SnSe 6 as an example, which shows one of the lowest sound velocities among known thermoelectric semiconductors, the lattice thermal conductivity is found to be as low as 0.2 W m -1 K -1 in the entire temperature range. As a result, a peak thermoelectric figure of merit zT > 1.2 and an average zT as high as ≈0.8 are achieved in Nb-doped materials, without relying on a high thermoelectric power factor. This work demonstrates not only a guiding principle of low sound velocity for minimal lattice thermal conductivity and therefore high zT , but also argyrodite compounds as promising thermoelectric materials with weak chemical bonds and heavy constituent elements.

Bandgap Engineering of Lead-Free Double Perovskite Cs2 AgBiBr6 through Trivalent Metal Alloying.

PubMed

Du, Ke-Zhao; Meng, Weiwei; Wang, Xiaoming; Yan, Yanfa; Mitzi, David B

2017-07-03

The double perovskite family, A 2 M I M III X 6 , is a promising route to overcome the lead toxicity issue confronting the current photovoltaic (PV) standout, CH 3 NH 3 PbI 3 . Given the generally large indirect band gap within most known double perovskites, band-gap engineering provides an important approach for targeting outstanding PV performance within this family. Using Cs 2 AgBiBr 6 as host, band-gap engineering through alloying of In III /Sb III has been demonstrated in the current work. Cs 2 Ag(Bi 1-x M x )Br 6 (M=In, Sb) accommodates up to 75 % In III with increased band gap, and up to 37.5 % Sb III with reduced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two metals, with smallest value of 1.86 eV for Cs 2 Ag(Bi 0.625 Sb 0.375 )Br 6 . Band structure calculations indicate that opposite band gap shift directions associated with Sb/In substitution arise from different atomic configurations for these atoms. Associated photoluminescence and environmental stability of the three-metal systems are also assessed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Proton-neutron multiplet states in {sup 112}Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fayez-Hassan, M.; Gulyas, J.; Dombradi, Z.

1997-05-01

Excited states of {sup 112}Sb were investigated through the {sup 112}Sn(p,n{gamma}){sup 112}Sb reaction. {gamma}-ray, {gamma}{gamma}-coincidence, and internal conversion electron spectra were measured with Ge(HP) {gamma} and superconducting magnetic lens plus Si(Li) electron spectrometers at 8.5, 8.9, 9.1, and 9.3 MeV bombarding proton energies. A significantly extended level scheme was constructed. Spins and parities have been assigned to the levels from Hauser-Feshbach analysis of reaction cross sections, internal conversion coefficients, angular distribution of the {gamma} rays, and decay properties of the states. The low lying states were assigned to proton-neutron multiplets on the basis of their decay properties. The energy splittingmore » of these multiplets have been calculated using the parabolic rule. {copyright} {ital 1997} {ital The American Physical Society}« less

Precise measurement of energy of the first excited state of 115Sn (Eexc ≃ 497.3 keV)

NASA Astrophysics Data System (ADS)

Zheltonozhsky, V. A.; Savrasov, A. M.; Strilchuk, N. V.; Tretyak, V. I.

2018-01-01

Single beta decay of 115In to the first excited level of 115Sn (E\\text{exc}≃ 497.3 \\text{keV} ) is known as β-decay with the lowest Qβ value. To determine the Qβ precisely, one has to measure very accurately the E\\text{exc} value. A sample of tin enriched in 115Sn to 50.7% was irradiated by a proton beam at the U-120 accelerator of INR, Kyiv. The 115Sb radioactive isotope, created in the 115Sn(p,n)115Sb reaction, decays with T1/2 = 32 \\text{min} to 115Sn populating the 497 keV level with ≃ 96{%} probability. The total statistics of ˜105 counts collected in the 497 keV peak in a series of measurements, the exact description of the peak shape and the precisely known calibration points around the 497 keV peak allowed to obtain the value E\\text{exc}= 497.342(3) \\text{keV} , which is the most precise to-date. This leads to the following Qβ\\ast value for the decay 115In → 115Sn*: Qβ\\ast= 147 +/- 10 \\text{eV} .

Low temperature thermoelectric properties of p-type doped single-crystalline SnSe

NASA Astrophysics Data System (ADS)

Wang, Si; Hui, Si; Peng, Kunling; Bailey, Trevor P.; Liu, Wei; Yan, Yonggao; Zhou, Xiaoyuan; Tang, Xinfeng; Uher, Ctirad

2018-04-01

SnSe single crystals have been widely studied lately as a result of their record high ZT and controversial low thermal conductivity. Much research has focused on the high-temperature properties of single crystals and polycrystalline SnSe, but few studies were carried out on the low-temperature properties of doped single-crystalline SnSe. To study the mechanism of the charge carrier and phonon scattering, and to eliminate the ambiguity of the high temperature thermal conductivity measurement, we performed low temperature transport characterization of Na-doped and Ag-doped single-crystalline SnSe by a longitudinal steady-state technique. The electronic transport property measurements suggest that Na is a more efficient p-type dopant in SnSe than Ag. In the thermal conductivity data, we observe pronounced dielectric peak around 10 K with magnitude dependent on the doping level. In the p-type doped samples, we found that our room temperature lattice thermal conductivities (>1.74 W m-1 K-1) are in general higher than those previously reported. Based on these findings, our study implies that the lattice thermal conductivity values of doped and pure single-crystalline SnSe were underestimated.

The effect of micro alloying on the microstructure evolution of Sn-Ag-Cu lead-free solder

NASA Astrophysics Data System (ADS)

Werden, Jesse

coarsening kinetics of SAC305, SAC+Zn, SAC+Mn, and SAC+Sb are all much slower than Pb-Sn alloys, therefore, power aging the solder will not be a viable method of stabilizing the microstructure. However, adding small amounts of Zn or Mn may be useful to maintain the original microstructure so that power aging is not required.

Contribution of tin in electrochemical properties of zinc antimonate nanostructures: An electrode material for supercapacitors

NASA Astrophysics Data System (ADS)

Balasubramaniam, M.; Balakumar, S.

2018-04-01

Tin (Sn) doped ZnSb2O6 nanostructures was synthesized by chemical precipitation method and was used as an electrode material for supercapacitors to explore its electrochemical stability and potentiality as energy storage materials. Their characteristic structural, morphological and compositional features were investigated through XRD, FESEM and XPS analysis. Results showed that the nanostructures have well ordered crystalline features with spherical particle morphology. As the size and morphology are the vital parameters in exhibiting better electrochemical properties, the prepared nanostructures exhibited a significant specific capacitance of 222 F/g at a current density of 0.5 A/g respectively. While charging and discharging for 1000 cycles, the capacitance retention was enhanced to 105.0% which depicts the stability and activeness of electrochemical sites present in the Sn doped ZnSb2O6 nanostructures even after cycling. Hence, the inclusion of Sn into ZnSb2O6 has contributed in improving the electrochemical properties thereby it represents itself as a potential electrode material for supercapacitors.

Higher baseline viral diversity correlates with lower HBsAg decline following PEGylated interferon-alpha therapy in patients with HBeAg-positive chronic hepatitis B.

PubMed

Li, Hu; Zhang, Li; Ren, Hong; Hu, Peng

2018-01-01

Viral diversity seems to predict treatment outcomes in certain viral infections. The aim of this study was to evaluate the association between baseline intra-patient viral diversity and hepatitis B surface antigen (HBsAg) decline following PEGylated interferon-alpha (Peg-IFN-α) therapy. Twenty-six HBeAg-positive patients who were treated with Peg-IFN-α were enrolled. Nested polymerase chain reaction (PCR), cloning, and sequencing of the hepatitis B virus S gene were performed on baseline samples, and normalized Shannon entropy (Sn) was calculated as a measure of small hepatitis B surface protein (SHBs) diversity. Multiple regression analysis was used to estimate the association between baseline Sn and HBsAg decline. Of the 26 patients enrolled in the study, 65.4% were male and 61.5% were infected with hepatitis B virus genotype B. The median HBsAg level at baseline was 4.5 log 10 IU/mL (interquartile range: 4.1-4.9) and declined to 3.0 log 10 IU/mL (interquartile range: 1.7-3.9) after 48 weeks of Peg-IFN-α treatment. In models adjusted for baseline alanine aminotransferase (ALT) and HBsAg, the adjusted coefficients (95% CI) for ΔHBsAg and relative percentage HBsAg decrease were -1.3 (-2.5, -0.2) log 10 IU/mL for higher SHBs diversity (Sn≥0.58) patients and -26.4% (-50.2%, -2.5%) for lower diversity (Sn<0.58) patients. Further analysis showed that the "a" determinant upstream flanking region and the first loop of the "a" determinant (nucleotides 341-359, 371-389, and 381-399) were the main sources of higher SHBs diversity. Baseline intra-patient SHBs diversity was inverse to HBsAg decline in HBeAg-positive chronic hepatitis B (CHB) patients receiving Peg-IFN-α monotherapy. Also, more sequence variations within the "a" determinant upstream flanking region and the first loop of the "a" determinant were the main sources of the higher SHBs diversity.

Contamination by trace elements at e-waste recycling sites in Bangalore, India.

PubMed

Ha, Nguyen Ngoc; Agusa, Tetsuro; Ramu, Karri; Tu, Nguyen Phuc Cam; Murata, Satoko; Bulbule, Keshav A; Parthasaraty, Peethmbaram; Takahashi, Shin; Subramanian, Annamalai; Tanabe, Shinsuke

2009-06-01

The recycling and disposal of electronic waste (e-waste) in developing countries is causing an increasing concern due to its effects on the environment and associated human health risks. To understand the contamination status, we measured trace elements (TEs) in soil, air dust, and human hair collected from e-waste recycling sites (a recycling facility and backyard recycling units) and the reference sites in Bangalore and Chennai in India. Concentrations of Cu, Zn, Ag, Cd, In, Sn, Sb, Hg, Pb, and Bi were higher in soil from e-waste recycling sites compared to reference sites. For Cu, Sb, Hg, and Pb in some soils from e-waste sites, the levels exceeded screening values proposed by US Environmental Protection Agency (EPA). Concentrations of Cr, Mn, Co, Cu, In, Sn, Sb, Tl, Pb and Bi in air from the e-waste recycling facility were relatively higher than the levels in Chennai city. High levels of Cu, Mo, Ag, Cd, In, Sb, Tl, and Pb were observed in hair of male workers from e-waste recycling sites. Our results suggest that e-waste recycling and its disposal may lead to the environmental and human contamination by some TEs. To our knowledge, this is the first study on TE contamination at e-waste recycling sites in Bangalore, India.

Calculation of the visible-UV absorption spectra of hydrogen sulfide, bisulfide, polysulfides, and As and Sb sulfides, in aqueous solution

PubMed Central

Tossell, JA

2003-01-01

Recently we showed that visible-UV spectra in aqueous solution can be accurately calculated for arsenic (III) bisulfides, such as As(SH)3, As(SH)2S- and their oligomers. The calculated lowest energy transitions for these species were diagnostic of their protonation and oligomerization state. We here extend these studies to As and Sb oxidation state III and v sulfides and to polysulfides Sn2-, n = 2–6, the bisulfide anion, SH-, hydrogen sulfide, H2S and the sulfanes, SnH2, n = 2–5. Many of these calculations are more difficult than those performed for the As(iii) bisulfides, since the As and Sb(v) species are more acidic and therefore exist as highly charged anions in neutral and basic solutions. In general, small and/or highly charged anions are more difficult to describe computationally than larger, monovalent anions or neutral molecules. We have used both Hartree-Fock based (CI Singles and Time-Dependent HF) and density functional based (TD B3LYP) techniques for the calculations of absorption energy and intensity and have used both explicit water molecules and a polarizable continuum to describe the effects of hydration. We correctly reproduce the general trends observed experimentally, with absorption energies increasing from polysulfides to As, Sb sulfides to SH- to H2S. As and Sb(v) species, both monomers and dimers, also absorb at characteristically higher energies than do the analogous As and Sb(III)species. There is also a small reduction in absorption energy from monomeric to dimeric species, for both As and Sb III and v. The polysufides, on the other hand, show no simple systematic changes in UV spectra with chain length, n, or with protonation state. Our results indicate that for the As and Sb sulfides, the oxidation state, degree of protonation and degree of oligomerization can all be determined from the visible-UV absorption spectrum. We have also calculated the aqueous phase energetics for the reaction of S8 with SH- to produce the polysulfides

The influence of gravity on the precise measurement of solute diffusion coefficients in dilute liquid metals and metalloids.

PubMed

Smith, Reginald W; Zhu, Xiaohe; Tunnicliffe, Mark C; Smith, Timothy J N; Misener, Lowell; Adamson, Josee

2002-10-01

It is now well known that the diffusion coefficient (D) measured in a laboratory in low earth orbit (LEO) is less than the corresponding value measured in a terrestrial laboratory. However, all LEO laboratories are subject to transient accelerations (g-jitter) superimposed on the steady reduced gravity environment of the space platform. In measurements of the diffusion coefficients for dilute binary alloys of Pb-(Ag, Au,Sb), Sb-(Ga,In), Bi-(Ag,Au,Sb), Sn-(Au,Sb), Al-(Fe, Ni,Si), and In-Sb in which g-jitter was suppressed, it was found that D proportional to T (temperature) if g-jitter was suppressed, rather than D proportional to T(2) as observed by earlier workers with g-jitter present. Furthermore, when a forced g-jitter was applied to a diffusion couple, the value measured for D increased. The significance of these results is reviewed in the light of recent work in which ab initio molecular dynamics simulations predicted a D proportional to T relationship.

Enhancement of the catalytic activity of Pt nanoparticles toward methanol electro-oxidation using doped-SnO2 supporting materials

NASA Astrophysics Data System (ADS)

Merati, Zohreh; Basiri Parsa, Jalal

2018-03-01

Catalyst supports play important role in governing overall catalyst activity and durability. In this study metal oxides (SnO2, Sb and Nb doped SnO2) were electrochemically deposited on titanium substrate (Ti) as a new support material for Pt catalyst in order to electro-oxidation of methanol. Afterward platinum nanoparticles were deposited on metal oxide film via electro reduction of platinum salt in an acidic solution. The surface morphology of modified electrodes were evaluated by field-emission scanning electron microscopy (FESEM) and energy dispersive X-ray analysis (EDX) techniques. The electro-catalytic activities of prepared electrodes for methanol oxidation reaction (MOR) and oxidation of carbon monoxide (CO) absorbed on Pt was considered with cyclic voltammetry. The results showed high catalytic activity for Pt/Nb-SnO2/Ti electrode. The electrochemical surface area (ECSA) of a platinum electro-catalyst was determined by hydrogen adsorption. Pt/Nb-SnO2/Ti electrode has highest ECSA compared to other electrode resulting in high activity toward methanol electro-oxidation and CO stripping experiments. The doping of SnO2 with Sb and Nb improved ECSA and MOR activity, which act as electronic donors to increase electronic conductivity.

Experiment Analysis and Modelling of Compaction Behaviour of Ag60Cu30Sn10 Mixed Metal Powders

NASA Astrophysics Data System (ADS)

Zhou, Mengcheng; Huang, Shangyu; Liu, Wei; Lei, Yu; Yan, Shiwei

2018-03-01

A novel process method combines powder compaction and sintering was employed to fabricate thin sheets of cadmium-free silver based filler metals, the compaction densification behaviour of Ag60Cu30Sn10 mixed metal powders was investigated experimentally. Based on the equivalent density method, the density-dependent Drucker-Prager Cap (DPC) model was introduced to model the powder compaction behaviour. Various experiment procedures were completed to determine the model parameters. The friction coefficients in lubricated and unlubricated die were experimentally determined. The determined material parameters were validated by experiments and numerical simulation of powder compaction process using a user subroutine (USDFLD) in ABAQUS/Standard. The good agreement between the simulated and experimental results indicates that the determined model parameters are able to describe the compaction behaviour of the multicomponent mixed metal powders, which can be further used for process optimization simulations.

Effects of Isothermal Aging on the Thermal Expansion of Several Sn-Based Lead-Free Solder Alloys

NASA Astrophysics Data System (ADS)

Hasnine, M.; Bozack, M. J.

2018-03-01

In this paper, effects of high-temperature aging on the thermal expansion behavior of several lead-free alloys SAC305, SAC387, Sn-3.5Ag, SnCu, SN100C (SnCu-Ni-Ge) and SnCu-0.01Ge have been explored. The coefficients of thermal expansion (CTEs) of the alloys have been experimentally determined over the temperature range 30-150 °C after isothermal aging at 125 °C for up to 30 days (720 h). The CTE values of SAC305, SAC387 and Sn-3.5Ag increase by 8-16% after 30 days of aging, while the CTE values of SnCu, SnCu-Ge and SN100C solders increase by only 3-6%. The CTE evolution of lead-free solders can be explained by microstructural changes observed during isothermal aging, which causes coarsening of various phases of the solder. As the phases coarsen, dislocation movement proceeds with a consequent increase in the average interparticle distance. The observation of CTE increases during isothermal aging suggests potential reliability problems for lead-free solder joints subjected to long-term aging exposures at high temperatures.

Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb, and Fe

NASA Astrophysics Data System (ADS)

de Jong, N.; Frantzeskakis, E.; Zwartsenberg, B.; Huang, Y. K.; Wu, D.; Hlawenka, P.; Sańchez-Barriga, J.; Varykhalov, A.; van Heumen, E.; Golden, M. S.

2015-08-01

Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved, and core-level photoemission. Fe, Nb, and Ag were evaporated onto Bi1 .5Sb0 .5Te1 .7Se1 .3 (BSTS) surfaces both at room temperature and 38 K. The coverage and temperature dependence of the adsorption and interfacial formation process have been investigated, highlighting the effects of the overlayer growth on the occupied electronic structure of the TI. For all coverages at room temperature and for those equivalent to less than 0.2 monolayer at low temperature all three metals lead to a downward shift of the TI bands with respect to the Fermi level. At room temperature Ag appears to intercalate efficiently into the van der Waals gap of BSTS, accompanied by low-level substitution for the Te/Se atoms of the termination layer of the crystal. This Te/Se substitution with silver increases significantly for low temperature adsorption, and can even dominate the electrostatic environment of the Bi/Sb atoms in the BSTS near-surface region. On the other hand, Fe and Nb evaporants remain close to the termination layer of the crystal. On room temperature deposition, they initially substitute isoelectronically for Bi as a function of coverage, before substituting for Te/Se atoms. For low temperature deposition, Fe and Nb are too immobile for substitution processes and show a behavior consistent with clustering on the surface. For both Ag and Fe/Nb, these differing adsorption pathways still lead to the qualitatively similar and remarkable behavior for low temperature deposition that the chemical potential first moves downward (p -type dopant behavior) and then upward (n -type behavior) on increasing coverage.

Electrochromic devices based on lithium insertion

DOEpatents

Richardson, Thomas J.

2006-05-09

Electrochromic devices having as an active electrode materials comprising Sb, Bi, Si, Ge, Sn, Te, N, P, As, Ga, In, Al, C, Pb, I and chalcogenides are disclosed. The addition of other metals, i.e. Ag and Cu to the active electrode further enhances performance.

Quench hardening of Sb0.2 Bi1.8Te3, Bi2Te2.8Se0.2 and Sn0.2 Bi1.8Te3 single crystals

NASA Astrophysics Data System (ADS)

Soni, P. H.

2018-02-01

The V2-VI3 intermetallics are narrow band gap semiconductors and well known for their thermoelectric properties. They therefore offer a convenient route to tune band gap for manipulating thermoelectric parameters. The V group element Sb can be fruitfully used to substitute Bi in various proportions thus forming a psuedobinary solid solution. The electronic in general and the thermoelectric properties in particular of this psuedobinary have been amply reported. However there are no reports found on mechanical properties. I have used Sb0.2 Bi1.8Te3, Bi2Te2.8Se0.2 and Sn0.2 Bi1.8Te3single crystals grown using Bridgman technique for the quenching treatment followed by hardness testing. Vickers hardness tests were conducted on the cleavage planes of the crystals quenched from various high temperatures and the quench hardenening coefficient values have been determined. The hardness tests were carried out at various applied loads also to explore load dependence of the measured hardness. The results are reported in the paper.

The effects of additives to SnAgCu alloys on microstructure and drop impact reliability of solder joints

NASA Astrophysics Data System (ADS)

Liu, Weiping; Lee, Ning-Cheng

2007-07-01

The impact reliability of solder joints in electronic packages is critical to the lifetime of electronic products, especially those portable devices using area array packages such as ball-grid array (BGA) and chip-scale packages (CSP). Currently, SnAgCu (SAC) solders are most widely used for lead-free applications. However, BGA and CSP solder joints using SAC alloys are fragile and prone to premature interfacial failure, especially under shock loading. To further enhance impact reliability, a family of SAC alloys doped with a small amount of additives such as Mn, Ce, Ti, Bi, and Y was developed. The effects of doping elements on drop test performance, creep resistance, and microstructure of the solder joints were investigated, and the solder joints made with the modified alloys exhibited significantly higher impact reliability.

Trace metals in bulk precipitation and throughfall in a suburban area of Japan

NASA Astrophysics Data System (ADS)

Hou, H.; Takamatsu, T.; Koshikawa, M. K.; Hosomi, M.

Throughfall and bulk precipitation samples were collected monthly for 1.5 years over bare land and under canopies of Japanese cedar ( Cryptomeria japonica), Japanese red pine ( Pinus densiflora), Japanese cypress ( Chamaecyparis obtusa), and bamboo-leafed oak ( Quercus myrsinaefolia) in a suburban area of Japan. Samples were analyzed for dissolved Al, Mn, Fe, Cu, Zn, Ag, In, Sn, Sb and Bi by ICP-AES and ICP-MS. The metal concentrations were higher in throughfall, especially that of C. japonica, than bulk precipitation. Enrichment ratios (ERs: ratios of metal concentrations in throughfall to those in bulk precipitation) ranged from 2.5 (Zn) to 5.3 (Ag) (3.9 on average), and ERs for slightly soluble metals were generally higher than those for easily soluble metals. Concentrations of Mn, Fe, Cu, and Zn accounted for 99% of the total concentration of heavy metals in rainwater, whereas those of rare metals such as Ag, In, Sn, and Bi totaled <0.23%. Average concentrations of rare metals were 0.002 and 0.010 μg l -1 for Ag, 0.001 and 0.005 μg l -1 for In, 0.062 and 0.21 μg l -1 for Sn, and 0.006 and 0.023 μg l -1 for Bi in bulk precipitation and throughfall, respectively. The metal concentrations in rainwater were negatively correlated to the volume of rainwater, indicating that washout is the main mechanism that incorporates metals into rainwater. From the enrichment factors, that is, (X/Al) rain/(X/Al) crust, metals other than Fe were shown to be more enriched in rainwater than in the Earth's crust, including those present as a result of leaching from soil dust (Mn) and from anthropogenic sources (Cu, Zn, Ag, In, Sn, Sb, and Bi).

TEM and TED investigation of Ag/PbTe thin film bilayers.

NASA Astrophysics Data System (ADS)

Mandrino, Đorđe; Marinković, V.

Morphology and phase structure of Ag/PbTe thin film bilayers were investigated. This system was of particular interest because of interfacial reaction observed previously in an analogous Ag/SnTe system. Reaction products due to the interdiffusion of Ag with the substrate were determined as well as their orientations. They were discussed in view of the reaction products' structural relations to the PbTe.

Evolution of Microstructure in Brazed Joints of Austenitic-Martensitic Stainless Steel with Pure Silver Obtained with Ag-27Cu-5Sn Brazing Filler Material

NASA Astrophysics Data System (ADS)

Gangadharan, S.; Sivakumar, D.; Venkateswaran, T.; Kulkarni, Kaustubh

2016-12-01

Brazing of an austenitic-martensitic stainless steel (AMSS) with pure silver was carried out at 1053 K, 1073 K, and 1093 K (780 °C, 800 °C, and 820 °C) with Ag-27Cu-5Sn (wt pct) as brazing filler material (BFM). Wettability of the liquid BFM over base AMSS surface was found to be poor. Application of nickel coating to the steel was observed to enhance the wettability and to enable the formation of a good bond between BFM and the steel. The mechanism responsible for enhanced metallurgical bonding of the BFM with AMSS in the presence of nickel coating was explained based on diffusional interactions and uphill diffusion of iron, chromium and nickel observed in the brazed microstructure. Good diffusion-assisted zone was observed to form on silver side at all three temperatures. Four phases were encountered within the joint including silver solid solution, copper solid solution, Cu3Sn intermetallic and Ni-Fe solid solution. The Cu3Sn intermetallic was present in small amounts in the joints brazed at 1053 K and 1073 K (780 °C and 800 °C). The joint formed at 1093 K (820 °C) exhibited the absence of Cu3Sn, fewer defects and larger diffusion-assisted zone. Hardness of base AMSS was found to reduce during brazing due to austenite reversion and post-brazing sub-zero treatment for 2.5 hours was found suitable to recover the hardness.

Thermodynamic assessment of the Sn-Co lead-free solder system

NASA Astrophysics Data System (ADS)

Liu, Libin; Andersson, Cristina; Liu, Johan

2004-09-01

The Sn-Co-Cu eutectic alloy can be a less expensive alternative for the Sn-Ag-Cu alloy. In order to find the eutectic solder composition of the Sn-Co-Cu system, the Sn-Co binary system has been thoroughly assessed with the calculation of phase diagram (CALPHAD) method. The liquid phase, the FCC and HCP Co-rich solid solution, and the BCT Sn-rich solid solution have been described by the Redlich-Kister model. The Hillert-Jarl-Inden model has been used to describe the magnetic contributions to Gibbs energy in FCC and HCP. The CoSn2, CoSn, Co3Sn2_β, and Co3Sn2_α phases have been treated as stoichiometric phases. A series of thermodynamic parameters have been obtained. The calculated phase diagram and thermodynamic properties are in good agreement with the experimental data. The obtained thermodynamic data was used to extrapolate the ternary Sn-Co-Cu phase diagram. The composition of the Sn-rich eutectic point of the Sn-Co-Cu system was found to be 224°C, 0.4% Co, and 0.7% Cu.

The Case of Carpathian (Transylvanian) Gold and its Use for Archaeological Items

NASA Astrophysics Data System (ADS)

Stan, D.; Constantinescu, B.; Vasilescu, A.; Radtke, M.; Reinholz, U.; Pop, D.; Ionescu, C.

2009-04-01

Romania was one of Europe's main gold-producing areas since the antiquity, especially through the ore deposits in the "Golden Quadrilateral" of the Western Carpathians. The Babeş-Bolyai University in Cluj-Napoca hosts a gold collection consisting of about 500 samples, most of them from Roşia Montană. The geochemical investigation of Romanian gold by using SR-XRF and micro-PIXE is currently in progress; some preliminary results point to interesting features. The goal of the study is to verify if Transylvanian gold was used to manufacture Romanian archaeological objects. This is realized by using information related to trace elements: Sb, Te, Pb - recognized fingerprints for Carpathian Mountains mines and Sn characteristic for the panned river-bed (alluvional) gold. To solve these issues, samples (grains, nuggets, fine gold "sand") from various Transylvanian mines and rivers and some very small (few milligrams) fragments of archaeological objects are measured. Another outcome of this SR-XRF experiment is to obtain the elemental characterization (Au, Ag and Cu) of representative gold mines, subject of interest for the assignement of any other archaeological artifacts to one of the Central European gold sources. During the experiment, point spectra for 22 natural gold samples and 18 "micronic" samples from archaeological objects were acquired at 34 keV excitation SR energy, using a spatially resolved SR-XRF set-up mounted for analyses at the hard X-ray beam line - BAMline at BESSY, Berlin. A summary for the characterization of Transylvanian native gold is the following: high (8 - 30%) Ag amounts and low (0.2 - 1%) Cu amounts; placer deposits contain as fingerprint Sn (150-300 ppm) - most probably from river bed cassiterite; primary deposits present as fingerprints Te (200-2000 ppm), Sb (150-300 ppm) - however, the samples are very inhomogeneous. The micro-PIXE experiment was performed at the AN 2000 Van de Graaff accelerator of Laboratori Nazionali di Legnaro

Investigation on localized corrosion of 304 stainless steel joints brazed using Sn-plated Ag alloy filler in NaCl aqueous solution

NASA Astrophysics Data System (ADS)

Wang, Xingxing; Li, Shuai; Peng, Jin

2018-03-01

Novel AgCuZnSn filler metal with high Sn contents was prepared from BAg50CuZn filler metal by a process of electroplating and thermal diffusion, and the prepared filler metal was applied to induction brazing of 304 stainless steel. The corrosion behavior of the brazed joints was evaluated based on localized corrosion analysis, the morphology of the joints were analyzed by SEM after immersion in a 3.5 vol% NaCl aqueous solution. The results indicated that corrosion groove occurred near the interface between the stainless steel base metal and the brazing seam. A wide range of defects such as holes and cracks appeared on the surface of the base metal, while the brazing seam zone almost no corrosion defects occur. With the increase of corrosion time, the corrosion rates of both the brazing seam and the base metal first exhibited an increasing trend, followed by a decreasing trend, and the corrosion rate of the base metal was slightly greater than that of the brazing seam. The corrosion potential of the brazing seam and 304 stainless steel were -0.7758 V and -0.7863 V, respectively.

Surface plasmon resonance induced enhancement of photoluminescence and Raman line intensity in SnS quantum dot-Sn nanoparticle hybrid structure.

PubMed

Warrier, Anita R; Gandhimathi, R

2018-04-27

In this article, we report on enhancement in photoluminescence and Raman line intensity of SnS quantum dots embedded in a mesh of Sn nanostructures. SnS nanoparticles synthesized by homogenous precipitation method show strong quantum confinement with a band gap of ∼2.7 eV (blue shift of ∼1 eV compared to bulk SnS particles). The optical band gap of SnS quantum dots is controlled by varying the pH (∼0 to 2.25), ageing time (24 to 144 h) and molarity (0 to 2 M) of the precursors. These SnS nanoparticles are embedded in a mesh of Sn nanostructures which are synthesized from tin chloride by using sodium borohydride as reducing agent. The Sn nanostructures have a morphology dependent, tunable surface plasmon resonance (SPR), ranging from UV (∼295 nm) to visible region (∼400 nm) of the electromagnetic spectrum. In the SnS-Sn nanohybrids, the excitons are strongly coupled with plasmons leading to a shift in the excitonic binding energy (∼400 meV). The pure SnS quantum dots have a very weak photoluminescence peak at ∼560 nm and Raman shift of low intensity at 853.08 cm -1 , 1078.17 cm -1 , 1255.60 cm -1 , 1466.91 cm -1 . The coupling of SnS nanoparticles with Sn nanoparticles results in strong exciton-plasmon interactions leading to enhanced photoluminescence and Raman line intensity. The nanohybrids formed using Sn nanosheets whose SPR matches with absorption onset of the SnS nanoparticles shows an enhancement of ∼10 4 times higher than pure SnS nanoparticles. Thus, Sn nanosheet with surface plasmon resonance in visible region (400 nm) like Au and Ag is a promising material for surface enhanced Raman spectroscopy, plasmon assisted fluorescence imaging and for enhancing the emission intensity of semiconductors with weak emission intensity.

Surface plasmon resonance induced enhancement of photoluminescence and Raman line intensity in SnS quantum dot-Sn nanoparticle hybrid structure

NASA Astrophysics Data System (ADS)

Warrier, Anita R.; Gandhimathi, R.

2018-07-01

In this article, we report on enhancement in photoluminescence and Raman line intensity of SnS quantum dots embedded in a mesh of Sn nanostructures. SnS nanoparticles synthesized by homogenous precipitation method show strong quantum confinement with a band gap of ∼2.7 eV (blue shift of ∼1 eV compared to bulk SnS particles). The optical band gap of SnS quantum dots is controlled by varying the pH (∼0 to 2.25), ageing time (24 to 144 h) and molarity (0 to 2 M) of the precursors. These SnS nanoparticles are embedded in a mesh of Sn nanostructures which are synthesized from tin chloride by using sodium borohydride as reducing agent. The Sn nanostructures have a morphology dependent, tunable surface plasmon resonance (SPR), ranging from UV (∼295 nm) to visible region (∼400 nm) of the electromagnetic spectrum. In the SnS-Sn nanohybrids, the excitons are strongly coupled with plasmons leading to a shift in the excitonic binding energy (∼400 meV). The pure SnS quantum dots have a very weak photoluminescence peak at ∼560 nm and Raman shift of low intensity at 853.08 cm‑1, 1078.17 cm‑1, 1255.60 cm‑1, 1466.91 cm‑1. The coupling of SnS nanoparticles with Sn nanoparticles results in strong exciton-plasmon interactions leading to enhanced photoluminescence and Raman line intensity. The nanohybrids formed using Sn nanosheets whose SPR matches with absorption onset of the SnS nanoparticles shows an enhancement of ∼104 times higher than pure SnS nanoparticles. Thus, Sn nanosheet with surface plasmon resonance in visible region (400 nm) like Au and Ag is a promising material for surface enhanced Raman spectroscopy, plasmon assisted fluorescence imaging and for enhancing the emission intensity of semiconductors with weak emission intensity.

Effects of Grain Orientation on Cu6Sn5 Growth Behavior in Cu6Sn5-Reinforced Composite Solder Joints During Electromigration

NASA Astrophysics Data System (ADS)

Han, Jing; Wang, Yan; Tan, Shihai; Guo, Fu

2018-02-01

Electromigration is a major reliability problem in composite solder joints. Due to the anisotropy of the β-Sn crystal structure, the Sn grain orientations present in the solder matrix dominate the principal failure mechanism in solder joints under electric current stressing. In this work, the Cu6Sn5 growth behavior in Cu6Sn5-reinforced composite solder joints with three different Sn grain orientations was investigated at current density of 104 A/cm2 at room temperature. Micron-sized Cu particles were added to Sn-3.5Ag solder at 2% volume fraction using an in situ method. After current stressing for 528 h, the polarity effect in the composite solder joint was greatest for an angle ( θ) between the c-axis and electron flow direction of 30°, resulting in higher growth rate of Cu6Sn5 in the solder matrix compared with composite solder joints with θ of 60° or 90°. There were no noticeable changes in the composite solder joint with θ of 90°. The growth behavior of Cu6Sn5, Cu atomic motion, and Cu diffusivity in the composite solder joints with different Sn grain orientations were analyzed in detail.

Solution-Processed hybrid Sb2 S3 planar heterojunction solar cell

NASA Astrophysics Data System (ADS)

Huang, Wenxiao; Borazan, Ismail; Carroll, David

Thin-film solar cells based on inorganic absorbers permit a high efficiency and stability. Among or those absorber candidates, recently Sb2S3 has attracted extensive attention because of its suitable band gap (1.5eV ~1.7 eV) , strong optical absorption, low-cost and earth-abundant constituents. Currently high-efficiency Sb2S3 solar cells have absorber layer deposited on nanostructured TiO2 electrodes in combination with organic hole transport material (HTM) on top. However it's challenging to fill the nanostructured TiO2 layer with Sb2S3 and subsequently by HTM, this leads to uncovered surface permits charge recombination. And the existing of Sb2S3/TiO2/HTM triple interface will enhance the recombination due to the surface trap state. Therefore, a planar junction cell would not only have simpler structure with less steps to fabricate but also ideally also have a higher open circuit voltage because of less interface carrier recombination. By far there is limited research focusing on planar Sb2S3 solar cell, so the feasibility is still unclear. Here, we developed a low-toxic solution method to fabricate Sb2S3 thin film solar cell, then we studied the morphology of the Sb2S3 layer and its impact to the device performance. The best device with a structure of FTO/TiO2/Sb2S3/P3HT/Ag has PCE over 5% which is similar or higher than yet the best nanostructure devices with the same HTM. Furthermore, based on solution engineering and surface modification, we improved the Sb2S3 film quality and achieved a record PCE. .

Electromigration induced high fraction of compound formation in SnAgCu flip chip solder joints with copper column

NASA Astrophysics Data System (ADS)

Xu, Luhua; Han, Jung-Kyu; Liang, Jarrett Jun; Tu, K. N.; Lai, Yi-Shao

2008-06-01

To overcome the effect of current crowding on electromigration-induced pancake-type void formation in flip chip solder joints, two types of Cu column in 90μm flip chip SnAgCu solder joints have been studied. They were (1) the solder contacts the Cu column at bottom and side walls and (2) the solder wets only the bottom surface of the copper column. With a current density of 1.6×104A/cm2 at 135°C, no failure was detected after 1290h. However, the resistance increased by about 10% due to the formation of a large fraction of intermetallic compounds. We found that electromigration has accelerated the consumption rate of copper column and converted almost the entire solder joint into intermetallic compound. Mechanically, drop impact test indicates a brittle fracture failure in the intermetallic. The electromigration critical product for the intermetallic is discussed.

One-step solvothermal synthesis of carnation flower-like SnS2 as superior electrodes for supercapacitor applications

NASA Astrophysics Data System (ADS)

Mishra, Rajneesh Kumar; Baek, Geun Woo; Kim, Kyuwon; Kwon, Hyuck-In; Jin, Sung Hun

2017-12-01

We report the synthesis of carnation flower-like SnS2 (CF-SnS2) via a one-step solvothermal method for potential application as supercapacitor electrodes in energy storage devices. The structural and morphological properties of CF-SnS2 were characterized by X-ray diffraction, Raman analysis, and field-emission scanning and transmission electron microscopies. X-ray photoelectron spectroscopy and scanning tunneling electron microscopy with color mapping verified the distribution of Sn and S, and depicted the successful formation of SnS2. Electrochemical studies were performed to explore the supercapacitive nature of CF-SnS2. Supercapacitors with CF-SnS2 electrodes delivered excellent cyclic voltammetry performances, superior gravimetric specific capacitances, and high power densities. The evaluated specific capacitance and power density reached ∼524.5 F/g and 12.3 W/kg, respectively, at a current density of 0.08 A/g, and ∼215.9 F/g and 61.4 W/kg, respectively, at a current density of 0.38 A/g. These values are at least two times higher than those previously reported. The long-term cyclic stability was also tested to demonstrate the endurance of the CF-SnS2-based supercapacitor, with a 66% rate retention and galvanostatic charge/discharge reversibility. These electrochemical findings indicate that CF-SnS2 is a promising candidate for electrode materials in supercapacitor applications.

Monetary alloys in Iron Age Armorica (Finistère, France): The singular case of the Osismi tribe

NASA Astrophysics Data System (ADS)

Guerra, M. F.; Abollivier, Ph.

2016-06-01

The analysis by PIXE and PAA of 64 coins struck in Iron Age Armorica by the Osismi tribe revealed the use of a different system from the usual Celtic Gaul tri-metallic system. The gold-based alloy (Au-Ag-Cu) firstly issued is debased over time to become a silver-based alloy (Ag-Cu-Sn). Based on the analytical data, two chronological phases were defined and dates of issuing could be ascribed to the coin-types. The presence of Sn and Sb in the alloys and the low contents of Pb were used in the attribution of 9 specimens of unknown origin to the Osismi monetary system. Considerations on the mints supplies could also be provided.

GaSbBi/GaSb quantum well laser diodes

NASA Astrophysics Data System (ADS)

Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

2017-05-01

We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

Specific composition of native silver from the Rogovik Au-Ag deposit, Northeastern Russia

NASA Astrophysics Data System (ADS)

Kravtsova, R. G.; Tauson, V. L.; Palyanova, G. A.; Makshakov, A. S.; Pavlova, L. A.

2017-09-01

The first data on native silver from the Rogovik Au-Ag deposit in northeastern Russia are presented. The deposit is situated in central part of the Okhotsk-Chukchi Volcanic Belt (OCVB) in the territory of the Omsukchan Trough, unique in its silver resources. Native silver in the studied ore makes up finely dispersed inclusions no larger than 50 μm in size, which are hosted in quartz; fills microfractures and interstices in association with küstelite, electrum, acanthite, silver sulfosalts and selenides, argyrodite, and pyrite. It has been shown that the chemical composition of native silver, along with its typomorphic features, is a stable indication of the various stages of deposit formation and types of mineralization: gold-silver (Au-Ag), silver-base metal (Ag-Pb), and gold-silver-base metal (Au-Ag-Pb). The specificity of native silver is expressed in the amount of trace elements and their concentrations. In Au-Ag ore, the following trace elements have been established in native silver (wt %): up to 2.72 S, up to 1.86 Au, up to 1.70 Hg, up to 1.75 Sb, and up to 1.01 Se. Native silver in Ag-Pb ore is characterized by the absence of Au, high Hg concentrations (up to 12.62 wt %), and an increase in Sb, Se, and S contents; the appearance of Te, Cu, Zn, and Fe is notable. All previously established trace elements—Hg, Au, Sb, Se, Te, Cu, Zn, Fe, and S—are contained in native silver of Au-Ag-Pb ore. In addition, Pb appears, and silver and gold amalgams are widespread, as well as up to 24.61 wt % Hg and 11.02 wt % Au. Comparison of trace element concentrations in native silver at the Rogovik deposit with the literature data, based on their solubility in solid silver, shows that the content of chalcogenides (S, Se, Te) exceeds saturated concentrations. Possible mechanisms by which elevated concentrations of these elements are achieved in native silver are discussed. It is suggested that the appearance of silver amalgams, which is unusual for Au-Ag mineralization

Morphology and Doping Engineering of Sn-Doped Hematite Nanowire Photoanodes.

PubMed

Li, Mingyang; Yang, Yi; Ling, Yichuan; Qiu, Weitao; Wang, Fuxin; Liu, Tianyu; Song, Yu; Liu, Xiaoxia; Fang, Pingping; Tong, Yexiang; Li, Yat

2017-04-12

High-temperature activation has been commonly used to boost the photoelectrochemical (PEC) performance of hematite nanowires for water oxidation, by inducing Sn diffusion from fluorine-doped tin oxide (FTO) substrate into hematite. Yet, hematite nanowires thermally annealed at high temperature suffer from two major drawbacks that negatively affect their performance. First, the structural deformation reduces light absorption capability of nanowire. Second, this "passive" doping method leads to nonuniform distribution of Sn dopant in nanowire and limits the Sn doping concentration. Both factors impair the electrochemical properties of hematite nanowire. Here we demonstrate a silica encapsulation method that is able to simultaneously retain the hematite nanowire morphology even after high-temperature calcination at 800 °C and improve the concentration and uniformity of dopant distribution along the nanowire growth axis. The capability of retaining nanowire morphology allows tuning the nanowire length for optimal light absorption. Uniform distribution of Sn doping enhances the donor density and charge transport of hematite nanowire. The morphology and doping engineered hematite nanowire photoanode decorated with a cobalt oxide-based oxygen evolution reaction (OER) catalyst achieves an outstanding photocurrent density of 2.2 mA cm -2 at 0.23 V vs Ag/AgCl. This work provides important insights on how the morphology and doping uniformity of hematite photoanodes affect their PEC performance.

Synthesis of SnO2 and Ag Nanoparticles from Electronic Wastes with the Assistance of Ultrasound and Microwaves

NASA Astrophysics Data System (ADS)

Cerchier, Pietrogiovanni; Dabalà, Manuele; Brunelli, Katya

2017-09-01

In this work, SnO2 and Ag nanoparticles were produced with a raw material nitric acid solution, which came from the leaching of printed circuit boards. First, a precursor of tin oxide was precipitated from the nitric acid solution by three different techniques: (I) conventional heating, (II) microwave irradiation, and (III) ultrasound treatment. Second, this precursor was transformed into tin oxide nanoparticles by heat treatment in a furnace. Third, hydrochloric acid was added to the nitric acid solution to induce the precipitation of silver chloride. Fourth, silver chloride was reduced to metallic silver nanoparticles in an ammonia solution using glucose syrup as both the reducing agent and the capping agent. The reduction reaction was carried out through (I) conventional heating, (II) microwave irradiation, and (III) ultrasound treatment. The nanoparticles were characterized by scanning electron microscope (SEM), x-ray diffractometer (XRD), infrared (IR)-spectroscopy, transmission electron microscope (TEM), ultraviolet (UV)-spectroscopy, and laser diffraction particle size analyzer.

Effect of Joint Scale and Processing on the Fracture of Sn-3Ag-0.5Cu Solder Joints: Application to Micro-bumps in 3D Packages

NASA Astrophysics Data System (ADS)

Talebanpour, B.; Huang, Z.; Chen, Z.; Dutta, I.

2016-01-01

In 3-dimensional (3D) packages, a stack of dies is vertically connected to each other using through-silicon vias and very thin solder micro-bumps. The thinness of the micro-bumps results in joints with a very high volumetric proportion of intermetallic compounds (IMCs), rendering them much more brittle compared to conventional joints. Because of this, the reliability of micro-bumps, and the dependence thereof on the proportion of IMC in the joint, is of substantial concern. In this paper, the growth kinetics of IMCs in thin Sn-3Ag-0.5Cu joints attached to Cu substrates were analyzed, and empirical kinetic laws for the growth of Cu6Sn5 and Cu3Sn in thin joints were obtained. Modified compact mixed mode fracture mechanics samples, with adhesive solder joints between massive Cu substrates, having similar thickness and IMC content as actual micro-bumps, were produced. The effects of IMC proportion and strain rate on fracture toughness and mechanisms were investigated. It was found that the fracture toughness G C decreased with decreasing joint thickness ( h Joint). In addition, the fracture toughness decreased with increasing strain rate. Aging also promoted alternation of the crack path between the two joint-substrate interfaces, possibly proffering a mechanism to enhance fracture toughness.

The atomistic mechanism for Sb segregation and As displacement of Sb in InSb(001) surfaces

NASA Astrophysics Data System (ADS)

Anderson, Evan M.; Millunchick, Joanna M.

2018-01-01

Interfacial broadening occurs in mixed-anion alloy heterostructures such as InAs/InAsSb due to both Sb-segregation and As-for-Sb exchange. In order to determine the atomistic mechanisms for these processes, we conduct ab initio calculations coupled with a cluster expansion formalism to determine the surface reconstructions of the pure and As-exposed InSb(001) surfaces. This approach provides a predicted phase diagram for pure InSb that is in better agreement with experiments. Namely, the α2(2 × 4) and α3c(4 × 4) structures are ultimately stable at 0K, but the α(4 × 3) and α2c(2 × 6) are within 1 meV/Å2. Exposure of the InSb(001) surface to As results in the As atoms infiltrating into the crystal and displacing subsurface Sb, thus providing the atomistic mechanisms for experimental observations of the As-for-Sb exchange reaction and Sb segregation. Experiments show that the widely reported A-(1 × 3) reconstruction is actually comprised of multiple reconstructions, which is consistent with the prediction of several nearly stable possible reconstructions.

Transplantation of epiphytic bioaccumulators (Tillandsia capillaris) for high spatial resolution biomonitoring of trace elements and point sources deconvolution in a complex mining/smelting urban context

NASA Astrophysics Data System (ADS)

Goix, Sylvaine; Resongles, Eléonore; Point, David; Oliva, Priscia; Duprey, Jean Louis; de la Galvez, Erika; Ugarte, Lincy; Huayta, Carlos; Prunier, Jonathan; Zouiten, Cyril; Gardon, Jacques

2013-12-01

Monitoring atmospheric trace elements (TE) levels and tracing their source origin is essential for exposure assessment and human health studies. Epiphytic Tillandsia capillaris plants were used as bioaccumulator of TE in a complex polymetallic mining/smelting urban context (Oruro, Bolivia). Specimens collected from a pristine reference site were transplanted at a high spatial resolution (˜1 sample/km2) throughout the urban area. About twenty-seven elements were measured after a 4-month exposure, also providing new information values for reference material BCR482. Statistical power analysis for this biomonitoring mapping approach against classical aerosols surveys performed on the same site showed the better aptitude of T. Capillaris to detect geographical trend, and to deconvolute multiple contamination sources using geostatistical principal component analysis. Transplanted specimens in the vicinity of the mining and smelting areas were characterized by extreme TE accumulation (Sn > Ag > Sb > Pb > Cd > As > W > Cu > Zn). Three contamination sources were identified: mining (Ag, Pb, Sb), smelting (As, Sn) and road traffic (Zn) emissions, confirming results of previous aerosol survey.

Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

NASA Astrophysics Data System (ADS)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

2018-05-01

A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

Effects of Amplitude Variations on Deformation and Damage Evolution in SnAgCu Solder in Isothermal Cycling

NASA Astrophysics Data System (ADS)

Wentlent, Luke; Alghoul, Thaer M.; Greene, Christopher M.; Borgesen, Peter

2018-02-01

Although apparently simpler than in thermal cycling, the behavior of SnAgCu (SAC) solder joints in cyclic bending or vibration is not currently well understood. The rate of damage has been shown to scale with the inelastic work per cycle, and excursions to higher amplitudes lead to an apparent softening, some of which remains so that damage accumulation is faster in subsequent cycling at lower amplitudes. This frequently leads to a dramatic breakdown of current damage accumulation rules. An empirical damage accumulation rule has been proposed to account for this, but any applicability to the extrapolation of accelerated test results to life under realistic long-term service conditions remains to be validated. This will require a better understanding of the underlying mechanisms. The present work provides experimental evidence to support recent suggestions that the observed behavior is a result of cycling-induced dislocation structures providing for increased diffusion creep. It is argued that this means that the measured work is an indicator of the instantaneous dislocation density, rather than necessarily reflecting the actual work involved in the creation of the damage.

Interconnection of thermal parameters, microstructure and mechanical properties in directionally solidified Sn–Sb lead-free solder alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dias, Marcelino; Costa, Thiago; Rocha, Otávio

2015-08-15

Considerable effort is being made to develop lead-free solders for assembling in environmental-conscious electronics, due to the inherent toxicity of Pb. The search for substitute alloys of Pb–Sn solders has increased in order to comply with different soldering purposes. The solder must not only meet the expected levels of electrical performance but may also have appropriate mechanical strength, with the absence of cracks in the solder joints. The Sn–Sb alloy system has a range of compositions that can be potentially included in the class of high temperature solders. This study aims to establish interrelations of solidification thermal parameters, microstructure andmore » mechanical properties of Sn–Sb alloys (2 wt.%Sb and 5.5 wt.%Sb) samples, which were directionally solidified under cooling rates similar to those of reflow procedures in industrial practice. A complete high-cooling rate cellular growth is shown to be associated with the Sn–2.0 wt.%Sb alloy and a reverse dendrite-to-cell transition is observed for the Sn–5.5 wt.%Sb alloy. Strength and ductility of the Sn–2.0 wt.%Sb alloy are shown not to be affected by the cellular spacing. On the other hand, a considerable variation in these properties is associated with the cellular region of the Sn–5.5 wt.%Sb alloy casting. - Graphical abstract: Display Omitted - Highlights: • The microstructure of the Sn–2 wt.%Sb alloy is characterized by high-cooling rates cells. • Reverse dendrite > cell transition occurs for Sn–5.5 wt.%Sb alloy: cells prevail for cooling rates > 1.2 K/s. • Sn–5.5 wt.%Sb alloy: the dendritic region occurs for cooling rates < 0.9 K/s. • Sn–5.5 wt.%Sb alloy: tensile properties are improved with decreasing cellular spacing.« less

Reliability of Sn/Pb and Lead-Free (SnAgCu) Solders of Surface Mounted Miniaturized Passive Components for Extreme Temperature (-185 C to +125 C) Space Missions

NASA Technical Reports Server (NTRS)

Ramesham, Rajeshuni

2011-01-01

Surface mount electronic package test boards have been assembled using tin/lead (Sn/Pb) and lead-free (Pb-free or SnAgCu or SAC305) solders. The soldered surface mount packages include ball grid arrays (BGA), flat packs, various sizes of passive chip components, etc. They have been optically inspected after assembly and subsequently subjected to extreme temperature thermal cycling to assess their reliability or future deep space, long-term, extreme temperature environmental missions. In this study, the employed temperature range (-185oC to +125oC) covers military specifications (-55oC to +100oC), extreme old Martian (-120oC to +115oC), asteroid Nereus (-180oC to +25oC) and JUNO (-150oC to +120oC) environments. The boards were inspected at room temperature and at various intervals as a function of extreme temperature thermal cycling and bake duration. Electrical resistance measurements made at room temperature are reported and the tests to date have shown some change in resistance as a function of extreme temperature thermal cycling and some showed increase in resistance. However, the change in interconnect resistance becomes more noticeable with increasing number of thermal cycles. Further research work will be carried out to understand the reliability of packages under extreme temperature applications (-185oC to +125oC) via continuously monitoring the daisy chain resistance for BGA, Flat-packs, lead less chip packages, etc. This paper will describe the experimental reliability results of miniaturized passive components (01005, 0201, 0402, 0603, 0805, and 1206) assembled using surface mounting processes with tin-lead and lead-free solder alloys under extreme temperature environments.

Solder/Substrate Interfacial Reactions in the Sn-Cu-Ni Interconnection System

NASA Astrophysics Data System (ADS)

Yu, H.; Vuorinen, V.; Kivilahti, J. K.

2007-02-01

In order to obtain a better understanding of the effects of interconnection microstructures on the reliability of soldered assemblies, one of the most important ternary systems used in electronics, the Sn-Cu-Ni system, has been assessed thermodynamically. Based on the data obtained, some recent experimental observations related to the formation of interfacial intermetallic compounds in solder interconnections have been studied analytically. First, the effect of Cu content on the formation of the interfacial intermetallic compounds between the SnAgCu solder alloys and Ni substrate was investigated. The critical Cu content for (Cu,Ni)6Sn5 formation was evaluated as a function of temperature. Second, we analyzed how the Ni dissolved in the Cu6Sn5 compound affects the driving forces for the diffusion of components and hence the growth kinetics of (Cu,Ni)6Sn5 and (Cu,Ni)3Sn reaction layers. With the thermodynamic description, other experimental observations related to the Sn-Cu-Ni system can be rationalized as well. The system can be used also as a subsystem for industrially important higher order solder systems.

Direct Observation of Inherent Atomic-Scale Defect Disorders responsible for High-Performance Ti1-x Hfx NiSn1-y Sby Half-Heusler Thermoelectric Alloys.

PubMed

Kim, Ki Sung; Kim, Young-Min; Mun, Hyeona; Kim, Jisoo; Park, Jucheol; Borisevich, Albina Y; Lee, Kyu Hyoung; Kim, Sung Wng

2017-09-01

Structural defects often dominate the electronic- and thermal-transport properties of thermoelectric (TE) materials and are thus a central ingredient for improving their performance. However, understanding the relationship between TE performance and the disordered atomic defects that are generally inherent in nanostructured alloys remains a challenge. Herein, the use of scanning transmission electron microscopy to visualize atomic defects directly is described and disordered atomic-scale defects are demonstrated to be responsible for the enhancement of TE performance in nanostructured Ti 1- x Hf x NiSn 1- y Sb y half-Heusler alloys. The disordered defects at all atomic sites induce a local composition fluctuation, effectively scattering phonons and improving the power factor. It is observed that the Ni interstitial and Ti,Hf/Sn antisite defects are collectively formed, leading to significant atomic disorder that causes the additional reduction of lattice thermal conductivity. The Ti 1- x Hf x NiSn 1- y Sb y alloys containing inherent atomic-scale defect disorders are produced in one hour by a newly developed process of temperature-regulated rapid solidification followed by sintering. The collective atomic-scale defect disorder improves the zT to 1.09 ± 0.12 at 800 K for the Ti 0.5 Hf 0.5 NiSn 0.98 Sb 0.02 alloy. These results provide a promising avenue for improving the TE performance of state-of-the-art materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of Ag addition on solid–state interfacial reactions between Sn–Ag–Cu solder and Cu substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ming