One step synthesis of Co/Cr-codoped ZnO nanoparticle with superb adsorption properties for various anionic organic pollutants and its regeneration.

PubMed

Li, Zhenjiang; Sun, Yongkai; Xing, Jing; Xing, Yucheng; Meng, Alan

2018-06-15

Adsorption is an effective means to remove organic pollutant. However, it is challenging to prepare the adsorbents with high adsorption capacities and their regeneration. Herein, Co/Cr-codoped ZnO nanoparticles (NPs) with superb adsorption for dyes and antibiotics have been successfully synthesized by a mild solvothermal method. At the optimal Co:Cr:Zn doping moral ratio of 4:6:100, the maximum adsorption capacities of methyl orange (MO) and tetracycline hydrochloride (TC-HCl) on Co/Cr-codoped ZnO NPs is 1057.90 mg g -1 and 874.46 mg g -1 , respectively. The adsorption process of the sample over MO and TC-HCl both agreed well with the pseudo-second-order kinetic model and Langmuir isotherm model. Adsorption thermodynamics proved that the adsorption of MO and TC-HCl on Co/Cr-codoped ZnO NPs was a spontaneous and endothermic process. The mechanism shows that the surface of Co/Cr-codoped ZnO NPs have more positive charges, larger specific surface area and more crystal defects due to Co 3+ and Cr 3+ substitutes Zn 2+ in ZnO lattice, improving their adsorption property. In addition, Co/Cr-codoped ZnO NPs have also excellent adsorption capacity for Direct Red, Congo Red, Evans Blue and Methyl Blue. More importantly, the regeneration of adsorbents was studied to achieve the reuse of materials, and avoid secondary pollution. Co/Cr-codoped ZnO NPs will be a promising choice for wastewater treatment owing to its excellent adsorption capacity and relatively low cost. Copyright © 2018 Elsevier B.V. All rights reserved.

High-Throughput Continuous Hydrothermal Synthesis of Transparent Conducting Aluminum and Gallium Co-doped Zinc Oxides.

PubMed

Howard, Dougal P; Marchand, Peter; McCafferty, Liam; Carmalt, Claire J; Parkin, Ivan P; Darr, Jawwad A

2017-04-10

High-throughput continuous hydrothermal flow synthesis was used to generate a library of aluminum and gallium-codoped zinc oxide nanoparticles of specific atomic ratios. Resistivities of the materials were determined by Hall Effect measurements on heat-treated pressed discs and the results collated into a conductivity-composition map. Optimal resistivities of ∼9 × 10 -3 Ω cm were reproducibly achieved for several samples, for example, codoped ZnO with 2 at% Ga and 1 at% Al. The optimum sample on balance of performance and cost was deemed to be ZnO codoped with 3 at% Al and 1 at% Ga.

Study on the effects of Ga-2N high co-doping and preferred orientation on the stability, bandgap and absorption spectrum of ZnO

NASA Astrophysics Data System (ADS)

Hou, Qing-Yu; Li, Wen-Cai; Qu, Ling-Feng; Zhao, Chun-Wang

2017-06-01

Currently, the stability and visible light properties of Ga-2N co-doped ZnO systems have been studied extensively by experimental analysis and theoretical calculations. However, previous theoretical calculations arbitrarily assigned Ga- and 2N-doped sites in ZnO. In addition, the most stable and possible doping orientations of doped systems have not been fully and systematically considered. Therefore, in this paper, the electron structure and absorption spectra of the unit cells of doped and pure systems were calculated by first-principles plane-wave ultrasoft pseudopotential with the GGA+U method. Calculations were performed for pure ZnO, Ga-2N supercells heavily co-doped with Zn1-xGaxO1-yNy (x = 0.03125 - 0.0625, y = 0.0625 - 0.125) under different co-doping orientations and conditions, and the Zn16GaN2O14 interstitial model. The results indicated that under different orientations and constant Ga-2N co-doping concentrations, the systems co-doped with Ga-N atoms vertically oriented to the c-axis and with another N atom located in the nearest-neighboring site exhibited higher stability over the others, thus lowering formation energy and facilitating doping. Moreover, Ga-interstitial- and 2N-co-doped ZnO systems easily formed chemical compounds. Increasing co-doping concentration while the co-doping method remained constant decreased doped system volume and lowered formation energies. Meantime, co-doped systems were more stable and doping was facilitated. The bandgap was also narrower and red shifting of the absorption spectrum was more significant. These results agreed with previously reported experimental results. In addition, the absorption spectra of Ga-interstitial- and 2N-co-doped ZnO both blue shifted in the UV region compared with that of the pure ZnO system.

Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

NASA Astrophysics Data System (ADS)

Shaheera, M.; Girija, K. G.; Kaur, Manmeet; Geetha, V.; Debnath, A. K.; Karri, Malvika; Thota, Manoj Kumar; Vatsa, R. K.; Muthe, K. P.; Gadkari, S. C.

2018-04-01

ZnO thin films were synthesized using RF magnetron sputtering, with simultaneous incorporation of Indium (In) and Gallium (Ga). The structural, optical, chemical composition and surface morphology of the pure and co-doped (IGZO) thin films were characterized by X-Ray diffraction (XRD), UV-visible spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), and Raman spectroscopy. XRD revealed that these films were oriented along c-axis with hexagonal wurtzite structure. The (002) diffraction peak in the co-doped sample was observed at 33.76° with a slight shift towards lower 2θ values as compared to pure ZnO. The surface morphology of the two thin films was observed to differ. For pure ZnO films, round grains were observed and for IGZO thin films round as well as rod type grains were observed. All thin films synthesized show excellent optical properties with more than 90% transmission in the visible region and band gap of the films is observed to decrease with co-doping. The co doping of In and Ga is therefore expected to provide a broad range optical and physical properties of ZnO thin films for a variety of optoelectronic applications.

Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santos, Daniel A.A., E-mail: danielandrade.ufs@gmail.com; Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260; Zeng, Hao

2015-06-15

Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using amore » shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.« less

Effect of Ag/Al co-doping method on optically p-type ZnO nanowires synthesized by hot-walled pulsed laser deposition

PubMed Central

2012-01-01

Silver and aluminum-co-doped zinc oxide (SAZO) nanowires (NWs) of 1, 3, and 5 at.% were grown on sapphire substrates. Low-temperature photoluminescence (PL) was studied experimentally to investigate the p-type behavior observed by the exciton bound to a neutral acceptor (A0X). The A0X was not observed in the 1 at.% SAZO NWs by low-temperature PL because 1 at.% SAZO NWs do not have a Ag-O chemical bonding as confirmed by XPS measurement. The activation energies (Ea) of the A0X were calculated to be about 18.14 and 19.77 meV for 3 and 5 at.% SAZO NWs, respectively, which are lower than the activation energy of single Ag-doped NW which is about 25 meV. These results indicate that Ag/Al co-doping method is a good candidate to make optically p-type ZnO NWs. PMID:22647319

Efficient photocatalytic performance enhancement in Co-doped ZnO nanowires coupled with CuS nanoparticles

NASA Astrophysics Data System (ADS)

Li, Wei; Wang, Guojing; Feng, Yimeng; Li, Zhengcao

2018-01-01

In this research, a kind of highly efficient semiconductor photocatalyst was fabricated by depositing CuS nanoparticles uniformly on the surface of Co-doped ZnO nanowires. ZnO nanowires were synthesized by hydrothermal method and CuS nanoparticles were modified by successive ionic layer adsorption and reaction (SILAR). By conducting methyl orange (MO) degradation experiments under the illumination of visible light, the photocatalytic activity of Co-doped ZnO nanowires modified with CuS nanoparticles was found to be nearly three times active when compared to bare ZnO nanowires. Its superior photocatalytic performance has two main reasons. The doped Co2+ ions can inhibit the recombination of photo-generated electron-hole pairs and decrease the optical bandgap, while the p-n heterostructure can enhance the visible light absorption ability and promote the separation of photo-excited charge carriers. Furthermore, the effect of the amount of deposited CuS nanoparticles on the photocatalysis was also investigated. The photocatalytic efficiency firstly raised along with the increment of SILAR cycle times and reached a maximum at 10 cycles but then decreased as the cycle times continue to increase. This originates from that an excessive amount of CuS would not only cover the active reacting sites, but also serve as recombination centers. Overall, this new nanostructure is expected to work as an efficient photocatalyst.

A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

NASA Astrophysics Data System (ADS)

Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

2018-01-01

ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

Codoping and Interstitial Deactivation in the Control of Amphoteric Li Dopant in ZnO for the Realization of p-Type TCOs

PubMed Central

Catellani, Alessandra; Calzolari, Arrigo

2017-01-01

We report on first principle investigations about the electrical character of Li-X codoped ZnO transparent conductive oxides (TCOs). We studied a set of possible X codopants including either unintentional dopants typically present in the system (e.g., H, O) or monovalent acceptor groups, based on nitrogen and halogens (F, Cl, I). The interplay between dopants and structural point defects in the host (such as vacancies) is also taken explicitly into account, demonstrating the crucial effect that zinc and oxygen vacancies have on the final properties of TCOs. Our results show that Li-ZnO has a p-type character, when Li is included as Zn substitutional dopant, but it turns into an n-type when Li is in interstitial sites. The inclusion of X-codopants is considered to deactivate the n-type character of interstitial Li atoms: the total Li-X compensation effect and the corresponding electrical character of the doped compounds selectively depend on the presence of vacancies in the host. We prove that LiF-doped ZnO is the only codoped system that exhibits a p-type character in the presence of Zn vacancies. PMID:28772691

Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simimol, A.; Department of Physics, National Institute of Technology Calicut, Calicut 673601; Anappara, Aji A.

We report the growth of un-doped and cobalt doped ZnO nanostructures fabricated on FTO coated glass substrates using electrodeposition method. A detailed study on the effects of dopant concentration on morphology, structural, optical, and magnetic properties of the ZnO nanostructures has been carried out systematically by varying the Co concentration (c.{sub Co}) from 0.01 to 1 mM. For c.{sub Co }≤ 0.2 mM, h-wurtzite phase with no secondary phases of Co were present in the ZnO nanostructures. For c.{sub Co} ≤ 0.2 mM, the photoluminescence spectra exhibited a decrease in the intensity of ultraviolet emission as well as band-gap narrowing with an increase in dopantmore » concentration. All the doped samples displayed a broad emission in the visible range and its intensity increased with an increase in Co concentration. It was found that the defect centers such as oxygen vacancies and zinc interstitials were the source of the visible emission. The X-ray photoelectron spectroscopy studies revealed, Co was primarily in the divalent state, replacing the Zn ion inside the tetrahedral crystal site of ZnO without forming any cluster or secondary phases of Co. The un-doped ZnO nanorods exhibited diamagnetic behavior and it remained up to a c.{sub Co} of 0.05 mM, while for c.{sub Co }> 0.05 mM, the ZnO nanostructures exhibited ferromagnetic behavior at room temperature. The coercivity increased to 695 G for 0.2 mM Co-doped sample and then it decreased for c.{sub Co }> 0.2 mM. Our results illustrate that up to a threshold concentration of 0.2 mM, the strong ferromagnetism is due to the oxygen vacancy defects centers, which exist in the Co-doped ZnO nanostructures. The origin of strong ferromagnetism at room temperature in Co-doped ZnO nanostructures is attributed to the s-d exchange interaction between the localized spin moments resulting from the oxygen vacancies and d electrons of Co{sup 2+} ions. Our findings provide a new insight for

Different magnetic origins of (Mn, Fe)-codoped ZnO powders and thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Jiuping; Jiang, Fengxian; Quan, Zhiyong

2012-11-15

Graphical abstract: The effects of the sample forms, fabricated methods, and process conditions on the structural and magnetic properties of (Mn, Fe)-codoped ZnO powders and films were systematically studied. The origins of ferromagnetism in the vacuum-annealed powder and PLD-deposited film are different. The former originates from the impurities of magnetic clusters, whereas the latter comes from the almost homogenous phase. Highlights: ► The magnetic natures of Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O powders and thin films come from different origins. ► The ferromagnetism of the powder is mainly from the contribution of magnetic clusters. ► Whereas the ferromagnetic behavior of the filmmore » comes from the almost homogenous phase. -- Abstract: The structural and magnetic properties of (Mn, Fe)-codoped ZnO powders as well as thin films were investigated. The X-ray diffraction and magnetic measurements indicated that the higher sintering temperature facilitates more Mn and Fe incorporation into ZnO. Magnetic measurements indicated that the powder sintered in air at 800 °C showed paramagnetic, but it exhibited obvious room temperature ferromagnetism after vacuum annealing at 600 °C. The results revealed that magnetic clusters were the major contributors to the observed ferromagnetism in vacuum-annealed Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O powder. Interestingly, the room temperature ferromagnetism was also observed in the Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O film deposited via pulsed laser deposition from the air-sintered paramagnetic target, but the secondary phases in the film were not detected from X-ray diffraction, transmission electron microscopy, and zero-field cooling and field cooling. Apparently, the magnetic natures of powders and films come from different origins.« less

Effects of (Ce, Cu) Co-doping on the Structural and Optical Properties of ZnO Aerogels Synthesized in Supercritical Ethanol

NASA Astrophysics Data System (ADS)

Djouadi, D.; Slimi, O.; Hammiche, L.; Chelouche, A.; Touam, T.

2018-03-01

Undoped, Ce-doped, Cu-doped and (Ce,Cu ) co-doped ZnO aerogels were synthesized by sol-gel process in supercritical conditions of ethanol. [Cu]/[Zn] and [Ce]/[Zn] atomic ratios were fixed at 0.02 (2%). The aerogels were investigated without any additional treatments by using X-ray diffraction (XRD), UV–visible spectrophotometry, scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDS), Fourier transforms infrared spectroscopy (FTIR) and photoluminescence spectroscopy (PL). XRD results revealed that all the samples are well crystallized in hexagonal wurtzite structure. EDS measurements showed that highly pure aerogels are prepared. SEM analysis indicated that the morphology of the samples is dependent on Cu and Ce dopants. From UV-visible spectroscopy analyses, it was shown that the absorption and the band gap of the aerogels are strongly affected by Ce and Cu dopants. FTIR spectra demonstrated that co-doping induces a shift of Zn-O bond vibration band toward low wavenumbers. The room temperature photoluminescence spectra put into evidence that the visible emission intensity is influenced by Ce and Cu doping. In particular, the co-doping leads to the appearance of a blue emission band at 443 nm.

Ferromagnetic mechanism of (Co, Cu)-codoped ZnO films with different Co concentrations investigated by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Yuan, Huan; Du, Xiaosong; Xu, Ming

2016-05-01

Cobalt/copper-codoped ZnO nanoparticles, synthesized with different Co concentrations by a sol-gel method using ethanol as solvent, were studied via XPS. Hexagonal wurtzite structure was found in all samples, with no evidence of any secondary phase. The average crystallite size of the samples was around 20-30 nm, altered significantly with increasing Co concentration. Copper ions and Cobalt ions are indeed substituted into the ZnO lattice at the Zn2+ site, as shown by XRD and XPS. Further studies showed dramatic changes of Cu valence from +2 to +1 as the Co concentration level exceeds 1%, accompanied by a blue-shift of the optical bandgap from 3.01 to 3.13 eV. Ferromagnetism of the Co-doped Zn0.95Cu0.05O thin films was observed and found to be tunable - a phenomenon associated with the valence state of the Cu ions and the existence of some defects like oxygen vacancies in the films.

Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods.

PubMed

Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho

2017-02-03

We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In 3+ ) and smaller (Ga 3+ ) than the host Zn 2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications.

Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods

NASA Astrophysics Data System (ADS)

Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho

2017-02-01

We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications.

Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods

PubMed Central

Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho

2017-01-01

We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications. PMID:28155879

Effect of Co doping concentration on structural properties and optical parameters of Co-doped ZnO thin films by sol-gel dip-coating method.

PubMed

Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young

2014-11-01

The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.

Annealing in tellurium-nitrogen co-doped ZnO films: The roles of intrinsic zinc defects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Kun, E-mail: ktang@nju.edu.cn; Gu, Ran; Gu, Shulin, E-mail: slgu@nju.edu.cn

2015-04-07

In this article, the authors have conducted an extensive investigation on the roles of intrinsic zinc defects by annealing of a batch of Te-N co-doped ZnO films. The formation and annihilation of Zn interstitial (Zn{sub i}) clusters have been found in samples with different annealing temperatures. Electrical and Raman measurements have shown that the Zn{sub i} clusters are a significant compensation source to holes, and the Te co-doping has a notable effect on suppressing the Zn{sub i} clusters. Meanwhile, shallow acceptors have been identified in photoluminescence spectra. The N{sub O}-Zn-Te complex, zinc vacancy (V{sub Zn})-N{sub O} complex, and V{sub Zn}more » clusters are thought to be the candidates as the shallow acceptors. The evolution of shallow acceptors upon annealing temperature have been also studied. The clustering of V{sub Zn} at high annealing temperature is proposed to be a possible candidate as a stable acceptor in ZnO.« less

Photoluminescence of transparent glass-ceramics based on ZnO nanocrystals and co-doped with Eu3+, Yb3+ ions

NASA Astrophysics Data System (ADS)

Arzumanyan, Grigory M.; Kuznetsov, Evgeny A.; Zhilin, Aleksandr A.; Dymshits, Olga S.; Shemchuk, Daria V.; Alekseeva, Irina P.; Mudryi, Alexandr V.; Zhivulko, Vadim D.; Borodavchenko, Olga M.

2016-12-01

Glasses of the K2Osbnd ZnOsbnd Al2O3sbnd SiO2 system co-doped with Eu2O3 and Yb2O3 were prepared by the melt-quenching technique. Transparent zincite (ZnO) glass-ceramics were obtained by secondary heat-treatments at 680-860 °C. At 860 °C, traces of Eu oxyapatite appeared in addition to ZnO nanocrystals. The average crystal size obtained from the X-ray diffraction data was found to range between 14 and 35 nm. Absorption spectra of the initial glasses are composed of an absorption edge and absorption bands due to electronic transitions of Eu3+ ions. With heat-treatment, the absorption edge pronouncedly shifts to the visible spectral range. The luminescence properties of the glass and glass-ceramics were studied by measuring their excitation and emission spectra at 300, 78, and 4.2 K. Strong red emission of Eu3+ ions dominated by the 5D0-7F2 (612 nm) electric dipole transition was detected. Changes in the luminescence properties of the Eu3+-related excitation and emission bands were observed after heat-treatments at 680 °C and 860 °C. The ZnO nanocrystals showed both broad luminescence (400-850 nm) and free-exciton emission near 3.3 eV at room temperature. The upconversion luminescence spectrum of the initial glass was obtained under excitation of the 976 nm laser source.

Upconversion luminescence from Er-N codoped of ZnO nanowires prepared by ion implantation method

NASA Astrophysics Data System (ADS)

Zhong, Kun; Xu, Jie; Su, Jing; Chen, Yu lin

2011-02-01

Nitrogen and erbium co-doped of ZnO nanowires (NWs) are fabricated by ion implantation and subsequent annealing in air. The incorporation of Er3+ and N+ ions is verified by energy dispersive X-ray spectroscopy (EDS) and Raman spectra. The samples exhibit upconversion photoluminescence around ∼550 nm and ∼660 nm under an excitation at 980 nm. It is discovered that the N-doped can drastically increase the upconversion photoluminescence intensity by modifying the local structure around Er3+ in ZnO matrix. The enhancement of the PL intensity by the N-doped is caused by the formation of ErO6-xNx octahedron complexes. With the increase of the annealing temperature (Ta), the Er3+ ions diffuse towards the surface of the NWs, which benefits the red emission and evokes the variation of intensity ratio owing to the existence of some organic groups.

Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, Hyo-Soo; Choi, Nak-Jung; Kim, Kyoung-Bo

Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al contentmore » in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.« less

Enhanced photoluminescence properties of Al doped ZnO films

NASA Astrophysics Data System (ADS)

Chen, H. X.; Ding, J. J.

2018-01-01

Al doped ZnO films are fabricated by radio frequency magnetron sputtering. In general, visible emission is related to various defects in ZnO films. However, too much defects will cause light emission quench. So it is still a controversial issue to control appropriate defect concentrations. In this paper, based on our previous results, appropriate Al doping concentration is chosen to introduce more both interstitial Zn and O vacancy defects, which is responsible for main visible emission of ZnO films. A strong emission band located at 405 nm and a long tail peak is observed in the samples. As Al is doped in ZnO films, the intensity of emission peaks increases. Zn interstitial might increase with the increasing Al3+ substitute because ZnO was a self-assembled oxide compound. So Zn interstitial defect concentration in Al doped ZnO films will increase greatly, which results in the intensity of emission peaks increases.

The Phase Relations in the In 2O 3-Al 2ZnO 4-ZnO System at 1350°C

NASA Astrophysics Data System (ADS)

Nakamura, Masaki; Kimizuka, Noboru; Mohri, Takahiko; Isobe, Mitsumasa

1993-08-01

Phase relations in the In 2O 3-Al 2ZnO 4-ZnO system at 1350°C are determined by a classical quenching method. This system consists of In 2O 3, Al 2ZnO 4, ZnO, and homologous phases InAlO 3(ZnO) m ( m = 2, 3, …) having solid solutions with LuFeO 3(ZnO) m-type crystal structures. These solid solution ranges are as follows: In 1+ x1Al 1- x1O 3(ZnO) 2 ( x1 = 0.70)-In 1+ x2Al 1- x2O 3(ZnO) 2 ( x2 = 0.316-0.320), In 2O 3(ZnO) 3-In 1+ xAl 1- xO 3(ZnO) 3 ( x = 0.230), In 2O 3(ZnO) 4-In 1+ xAl 1- xO 3(ZnO) 4 ( x = 0.15-0.16), In 2O 3(ZnO) 5-In 1+ xAl 1- xO 3(ZnO) 5 ( x = 0.116-0.130), In 2O 3(ZnO) 6-In 1+ xAl 1- xO 3(ZnO) 6 ( x = 0.000-0.111), In 2O 3(ZnO) 7-In 1+ xAl 1- xO 3(ZnO) 7 ( x = 0.08), In 2O 3(ZnO) 8-In 1+ xAl 1- xO 3(ZnO) 8 ( x: undetermined), and In 2O 3(ZnO) m-InAlO 3(ZnO) m ( m = 9, 10, 11, 13, 15, 17, and 19). The space groups of these homologous phases belong to R3¯ m for m = odd or P6 3/ mmc for m = even. Their crystal structures, In 1+ xAl 1- xO 3(ZnO) m (0 < x < 1), consist of three kinds of layers: an InO 1.5 layer, an (In xAl 1- xZn)O 2.5 layer, and ZnO layers. A comparison of the phase relations in the In 2O 3- M2ZnO 4-ZnO systems ( M = Fe, Ga, or Al) is made and their characteristic features are discussed in terms of the ionic radii and site preferences of the M cations.

Thermally and optically stimulated radiative processes in Eu and Y co-doped LiCaAlF6 crystal

NASA Astrophysics Data System (ADS)

Fukuda, Kentaro; Yanagida, Takayuki; Fujimoto, Yutaka

2015-06-01

Yttrium co-doping was attempted to enhance dosimeter performance of Eu doped LiCaAlF6 crystal. Eu doped and Eu, Y co-doped LiCaAlF6 were prepared by the micro-pulling-down technique, and their dosimeter characteristics such as optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were investigated. By yttrium co-doping, emission intensities of OSL and TSL were enhanced by some orders of magnitude. In contrast, scintillation characteristics of yttrium co-doped crystal such as intensity of prompt luminescence induced by X-ray and light yield under neutron irradiation were degraded.

EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition.

PubMed

Mino, Lorenzo; Gianolio, Diego; Bardelli, Fabrizio; Prestipino, Carmelo; Senthil Kumar, E; Bellarmine, F; Ramanjaneyulu, M; Lamberti, Carlo; Ramachandra Rao, M S

2013-09-25

Ni doped, Li doped and (Li, Ni) codoped ZnO thin films were successfully grown using a pulsed laser deposition technique. Undoped and doped ZnO thin films were investigated using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge spectroscopy (XANES). Preliminary investigations on the Zn K-edge of the undoped and doped ZnO thin films revealed that doping has not influenced the average Zn-Zn bond length and Debye-Waller factor. This shows that both Ni and Li doping do not appreciably affect the average local environment of Zn. All the doped ZnO thin films exhibited more than 50% of substitutional Ni, with a maximum of 77% for 2% Ni and 2% Li doped ZnO thin film. The contribution of Ni metal to the EXAFS signal clearly reveals the presence of Ni clusters. The Ni-Ni distance in the Ni(0) nanoclusters, which are formed in the film, is shorter with respect to the reference Ni metal foil and the Debye-Waller factor is higher. Both facts perfectly reflect what is expected for metal nanoparticles. At the highest doping concentration (5%), the presence of Li favors the growth of a secondary NiO phase. Indeed, 2% Ni and 5% Li doped ZnO thin film shows %Nisub = 75 ± 11, %Nimet = 10 ± 8, %NiO = 15 ± 8. XANES studies further confirm that the substitutional Ni is more than 50% in all the samples. These results explain the observed magnetic properties.

Influence Al doped ZnO nanostructure on structural and optical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramelan, Ari Handono, E-mail: aramelan@mipa.uns.ac.id; Wahyuningsih, Sayekti; Chasanah, Uswatul

2016-04-19

The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO causemore » of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.« less

Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films

NASA Astrophysics Data System (ADS)

Zhang, B. Y.; Yao, B.; Li, Y. F.; Liu, A. M.; Zhang, Z. Z.; Li, B. H.; Xing, G. Z.; Wu, T.; Qin, X. B.; Zhao, D. X.; Shan, C. X.; Shen, D. Z.

2011-10-01

Room temperature ferromagnetism (RTFM) was observed in Li-N codoped ZnO thin films [ZnO:(Li, N)] fabricated by plasma-assisted molecular beam epitaxy, and p-type ZnO:(Li, N) shows the strongest RTFM. Positron annihilation spectroscopy and low temperature photoluminescence measurements indicate that the RTFM in ZnO:(Li, N) is attributed to the defect complex related to VZn, such as VZn and Lii-NO-VZn complex, well supported by first-principles calculations. The incorporation of NO can stabilize and enhance the RTFM of ZnO:(Li, N) by combining with Lii to form Lii-NO complex, which restrains the compensation of Lii for VZn and makes the ZnO:(Li, N) conduct in p-type.

Structure and Properties of Al and Ga- Doped ZnO

NASA Astrophysics Data System (ADS)

Temizer, Namik Kemal

Recently there is tremendous interest in Transparent conducting oxide (TCO) research due to the unlimited and exciting application areas. Current research is mostly focused on finding alternative low cost and sustainable materials in order to replace indium tin oxide (ITO), which caused serious concern due to the increasing cost of indium and chemical stability issues of ITO. The primary aim of this research is to develop alternative TCO materials with superior properties in order to increase the efficiency in optoelectronic applications, as well as to study the properties of these materials to fully characterize them. We have grown Al and Ga-doped ZnO films with an optimized composition under different deposition conditions in order to understand the effect of processing parameters on the film properties. We report a detailed investigation on the structure-property correlations in Ga and Al codoped ZnO films on c-sapphire substrates where the thin film microstructure varies from nanocrystalline to single crystal. We have achieved highly epitaxial films with very high optical transmittance (close to 90%) and low resistivity (˜110muO-cm) values. The films grown in an ambient oxygen partial pressure (PO2 ) of 50 mTorr and at growth temperatures from room temperature to 600°C showed semiconducting behavior, whereas samples grown at a Po2 of 1 mTorr showed metallic nature. The most striking feature is the occurrence of resistivity minima at relatively high temperatures around 110 K in films deposited at high temperatures. The structure-property correlations reveal that point defects play an important role in modifying the structural, optical, electrical and magnetic properties and such changes in physical properties are controlled predominantly by the defect content. To gain a better understanding of the conduction processes in doped ZnO thin films, we have studied the temperature variation of resistivity of some selected samples that showed some interesting behavior

Single and couple doping ZnO nanocrystals characterized by positron techniques

NASA Astrophysics Data System (ADS)

Pasang, Tenzin; Namratha, Keerthiraj; Guagliardo, Paul; Byrappa, Kullaiah; Ranganathaiah, Chikkakuntappa; Samarin, S.; Williams, J. F.

2015-04-01

Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag1+ and Pd2+ dopants occupy interstitial sites of the ZnO lattice and single Ru3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn4+ + Co2+) shows similar CDB ratios as Ru3+ single-doping. Also co-doping with (Ag1+ + Pd2+) or (Ag1+ + W6+) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material.

Structural, optical, and LED characteristics of ZnO and Al doped ZnO thin films

NASA Astrophysics Data System (ADS)

Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

2017-05-01

ZnO (pristine) and Al doped ZnO (AZO) films were prepared using sol-gel spin coating method. The XRD analysis showed the enhanced compressive stress in AZO film. The presence of extended states below the conduction band edge in AZO accounts for the redshift in optical bandgap. The PL spectra of AZO showed significant blue emission due to the carrier recombination from defect states. The TRPL curves showed the dominant DAP recombination in ZnO film, whereas defect related recombination in Al doped ZnO film. Color parameters viz: the dominant wavelength, color coordinates (x,y), color purity, luminous efficiency and correlated color temperature (CCT) of ZnO and AZO films are calculated using 1931 (CIE) diagram. Further, a strong blue emission with color purity more than 96% is observed in both the films. The enhanced blue emission in AZO significantly increased the luminous efficiency (22.8%) compared to ZnO film (10.8%). The prepared films may be used as blue phosphors in white light generation.

Effect of (Mn,Cr) co-doping on structural, electronic and magnetic properties of zinc oxide by first-principles studies

NASA Astrophysics Data System (ADS)

Aimouch, D. E.; Meskine, S.; Boukortt, A.; Zaoui, A.

2018-04-01

In this study, structural, electronic and magnetic properties of Mn doped (ZnO:Mn) and (Mn,Cr) co-doped zinc oxide (ZnO:(Mn,Cr)) have been calculated with the FP-LAPW method by using the LSDA and LSDA+U approximations. Going through three configurations of Mn,Cr co-doped ZnO corresponding to three different distances between manganese and chromium, we have analyzed that ZnO:(Mn,Cr) system is more stable in its preferred configuration2. The lattice constant of undoped ZnO that has been calculated in this study is in a good agreement with the experimental and theoretical values. It was found to be increased by doping with Mn or (Mn,Cr) impurities. The band structure calculations showed the metallic character of Mn doped and Mn,Cr co-doped ZnO. As results, by using LSDA+U (U = 6eV), we show the half-metallic character of ZnO:Mn and ZnO:Mn,Cr. We present the calculated exchange couplings d-d of Mn doped ZnO which is in a good agreement with the former FPLO calculation data and the magnetization step measurement of the experimental work. The magnetic coupling between neighboring Mn impurities in ZnO is found to be antiferromagnetic. In the case of (Mn,Cr) co-doped ZnO, the magnetic coupling between Mn and Cr impurities is found to be antiferromagnetic for configuration1 and 3, and ferromagnetic for configuration2. Thus, the ferromagnetic coupling is weak in ZnO:Mn. Chromium co-doping greatly enhance the ferromagnetism, especially when using configuration2. At last, we present the 2D and 3D spin-density distribution of ZnO:Mn and ZnO:(Mn,Cr) where the ferromagnetic state in ZnO:(Mn,Cr) comes from the strong p-d and d-d interactions between 2p-O, 3d-Mn and 3d-Cr electrons. The results of our calculations suggest that the co-doping ZnO(Mn, Cr) can be among DMS behavior for spintronic applications.

Codoped direct-gap semiconductor scintillators

DOEpatents

Derenzo, Stephen Edward [Pinole, CA; Bourret-Courchesne, Edith [Berkeley, CA; Weber, Marvin J [Danville, CA; Klintenberg, Mattias K [Berkeley, CA

2008-07-29

Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Codoped direct-gap semiconductor scintillators

DOEpatents

Derenzo, Stephen E.; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

2006-05-23

Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Synthesis of SrAl2O4:Eu2+ phosphors co-doped with Dy3+, Tb3+, Si4+ and optimization of co-doping amount by response surface method

NASA Astrophysics Data System (ADS)

Wang, Huan; Liang, Xiaoping; Liu, Kai; Zhou, Qianqian; Chen, Peng; Wang, Jun; Li, Jianxin

2016-03-01

Dy3+ doped SrAl2O4:Eu2+ phosphors were synthesized by high temperature solid phase method in a weak reducing atmosphere (5% H2 + 95% N2). The relationship between the crushed granularity and the phosphors brightness was studied. The effect of co-doping amount of Dy3+, Tb3+ and Si4+ on the structure and properties of SrAl2O4:Eu2+ via response surface method was investigated. Photoluminescence measurement results showed that the initial afterglow brightness of 0.002 mol% Dy3+ doped SrAl2O4:Eu2+0.002 phosphors decreased after first increased within the sintering temperature range from 1150 to 1400 °C, which created the highest value of 12,101 mcd/m2 at 1300 °C. Numerous coarse particles in the powder ought to be crushed for the practical application, however, the brightness became lower accompanied by the decrease of the granularity. The luminescence property of SrAl2O4:Eu2+ sintered at 1200 °C improved by co-doping Dy3+-Tb3+-Si4+. The results of response surface method showed that the influence extent on the luminescence property was Dy3+ > Tb3+ > Si4+. When the co-doping amount in SrAl2O4:Eu2+0.002 phosphors of Dy3+, Tb3+ and Si4+ was 0.001 mol%, 0.0005 mol% and 0.002 mol%, respectively, the initial afterglow brightness of SrAl2O4 was up to the highest value of 12,231 mcd/m2, which was in good agreement on the predicted maximum value of 12,519 mcd/m2 with the optimum co-doping amount of 0.0015 mol% Dy3+, 0.0005 mol% Tb3+ and 0.0017 mol% Si4+. The brightness of co-doped phosphors not only increased by 56.79% than that of SrAl2O4:Eu2+0.002, Dy3+0.002 sintered at 1200 °C, but also was above that of 1300 °C. The emission spectra results showed that, compared with 0.001 mol% Dy3+ doped phosphor, the emission peak of 0.001 mol% Dy3+-0.001 mol% Tb3+ co-doped phosphor generated red shift and increased by 9.3% in emission intensity; 0.001 mol% Dy3+-0.004 mol% Si4+ and 0.001 mol% Dy3+-0.001 mol% Tb3+-0.004 mol% Si4+ co-doped SrAl2O4:Eu2+0.002 emission peak created blue

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

NASA Astrophysics Data System (ADS)

Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

2015-03-01

Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

Mg,Ce co-doped Lu2Gd1(Ga,Al)5O12 by micro-pulling down method and their luminescence properties

NASA Astrophysics Data System (ADS)

Kamada, Kei; Yamaguchi, Hiroaki; Yoshino, Masao; Kurosawa, Shunsuke; Shoji, Yasuhiro; Yokota, Yuui; Ohashi, Yuji; Pejchal, Jan; Nikl, Martin; Yoshikawa, Akira

2018-04-01

The effects of Mg co-doping on the scintillation properties of Ce:Lu2Gd1(Ga,Al)5O12 (LGGAG) single crystals with different Ga/Al ratios were investigated. Mg co-doped and non co-doped Ce:LGGAG single crystals were grown by the micro-pulling down (µ-PD) method and then cut, polished and annealed for each measurement. Absorption spectra, radioluminescence (RL) spectra, pulse height spectra, and scintillation decay were measured to reveal the effect of Mg co-doping. Ce4+ charge transfer (CT) absorption band peaking at ∼260 nm was observed in Mg co-doped samples, which is in good agreement with previous reports for the Ce4+ CT absorption band in other garnet-based crystals. The scintillation decay time tended to be accelerated and the light yield tended to be decreased by Mg co-doping at higher Ga concentrations.

Reactive codoping of GaAlInP compound semiconductors

DOEpatents

Hanna, Mark Cooper [Boulder, CO; Reedy, Robert [Golden, CO

2008-02-12

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Temperature- and frequency-dependent dielectric behaviors of insulator/semiconductor (Al2O3/ZnO) nanolaminates with various ZnO thicknesses

NASA Astrophysics Data System (ADS)

Li, Jin; Bi, Xiaofang

2016-07-01

Al2O3/ZnO nanolaminates (NLs) with various ZnO sublayer thicknesses were prepared by atomic layer deposition. The Al2O3 sublayers are characterized as amorphous and the ZnO sublayers have an oriented polycrystalline structure. As the ZnO thickness decreases to a certain value, each NL exhibits a critical temperature at which its dielectric constant starts to rise quickly. Moreover, this temperature increases as the ZnO thickness is decreased further. On the other hand, the permittivity demonstrates a large value of several hundred at a frequency  ⩽1000 Hz, followed by a steplike decrease at a higher frequency. The change in the cut-off frequency with ZnO thickness is characterized by a hook function. It is revealed that the Coulomb confinement effect becomes predominant in the dielectric behaviors of the NLs with very thin ZnO. As the ZnO thickness decreases to about the same as or even smaller than the Bohr radius of ZnO, a great change in the carrier concentration and effective mass of ZnO is induced, which is shown to be responsible for the peculiar dielectric behaviors of Al2O3/ZnO with very thin ZnO. These findings provide insight into the prevailing mechanisms to optimize the dielectric properties of semiconductor/insulator laminates with nanoscale sublayer thickness.

Alkali earth co-doping effects on luminescence and scintillation properties of Ce doped Gd3Al2Ga3O12 scintillator

NASA Astrophysics Data System (ADS)

Kamada, Kei; Nikl, Martin; Kurosawa, Shunsuke; Beitlerova, Alena; Nagura, Aya; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2015-03-01

The Mg and Ca co-doped Ce:Gd3Al2Ga3O12 single crystals were prepared by micro pulling down method with a wide concentration range 0-1000 ppm of the codopants. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg and Ca co-doping. The scintillation decays were accelerated by both Mg and Ca codopants. Comparing to Ca co-doping, the Mg co-doped samples showed much faster decay and comparatively smaller light output decrease with increasing Mg dopant concentration.

Co-Dopant Influence on the Persistent Luminescence of BaAl2O4:Eu2+,R3+

NASA Astrophysics Data System (ADS)

Rodrigues, Lucas C. V.; Hölsä, Jorma; Carvalho, José M.; Pedroso, Cássio C. S.; Lastusaari, Mika; Felinto, Maria C. F. C.; Watanabe, Shigeo; Brito, Hermi F.

2014-04-01

The R3+ (rare earth) co-dopants may have a surprisingly important role in persistent luminescence - enhancement of up to 1-3 orders of magnitude may be obtained in the performance of these phosphor materials - depending strongly on the R3+ ion, of course. In this work, the effects of the R3+ co-dopants in the BaAl2O4:Eu2+,R3+ materials were studied using mainly thermoluminescence (TL) and synchrotron radiation XANES methods. In BaAl2O4, the conventional and persistent luminescence both arise from the 4f7→4f65d1 transition of Eu2+, yielding blue-green emission color. The former, in the presence of humidity, turns to more bluish because of creation of an additional Eu2+ luminescence centre which is not, however, visible in persistent luminescence. The trap structure in the non-co-doped BaAl2O4:Eu2+ is rather complex with 4-5 TL bands above room temperature. With R3+ co-doping, this basic structure is modified though no drastic change can be observed. This underlines the fact that even very small changes in the trap depths can produce significant modifications in the persistent luminescence efficiency. It should be remembered that basically the persistent luminescence performance is controlled by the Boltzmann population law depending exponentially on both the temperature and trap depth. Some mechanisms for persistent luminescence have suggested the presence of either divalent R2+ or tetravalent RIV during the charging of the Eu2+ doped materials. The present XANES measurements on BaAl2O4:Eu2+,R3+ confirmed the presence of only the trivalent form of the R3+ co-dopants excluding both of these pathways. It must thus be concluded, that the energy is stored in intrinsic and extrinsic defects created by the synthesis conditions and charge compensation due to R3+ co-doping. Even though the effect of the R3+ co-dopants was carefully exploited and characterized, the differences in the effect of different R3+ ions with very similar chemical and spectroscopic properties could

ZnO for solar cell and thermoelectric applications

NASA Astrophysics Data System (ADS)

Zhou, Chuanle; Ghods, Amirhossein; Yunghans, Kelcy L.; Saravade, Vishal G.; Patel, Paresh V.; Jiang, Xiaodong; Kucukgok, Bahadir; Lu, Na; Ferguson, Ian

2017-03-01

ZnO-based materials show promise in energy harvesting applications, such as piezoelectric, photovoltaic and thermoelectric. In this work, ZnO-based vertical Schottky barrier solar cells were fabricated by MOCVD de- position of ZnO thin films on ITO back ohmic contact, while Ag served as the top Schottky contact. Various rapid thermal annealing conditions were studied to modify the carrier density and crystal quality. Greater than 200 nm thick ZnO films formed polycrystalline crystal structure, and were used to demonstrate Schottky solar cells. I-V characterizations of the devices showed photovoltaic performance, but but need further development. This is the first demonstration of vertical Schottky barrier solar cell based on wide bandgap ZnO film. Thin film and bulk ZnO grown by MOCVD or melt growth were also investigated in regards to their room- temperature thermoelectric properties. The Seebeck coefficient of bulk ZnO was found to be much larger than that of thin film ZnO at room temperature due to the higher crystal quality in bulk materials. The Seebeck coefficients decrease while the carrier concentration increases due to the crystal defects caused by the charge carriers. The co-doped bulk Zn0:96Ga0:02Al0:02O showed enhanced power factors, lower thermal conductivities and promising ZT values in the whole temperature range (300-1300 K).

Co-doping effects on luminescence and scintillation properties of Ce doped (Lu,Gd)3(Ga,Al)5O12 scintillator

NASA Astrophysics Data System (ADS)

Yamaguchi, Hiroaki; Kamada, Kei; Kurosawa, Shunsuke; Pejchal, Jan; Shoji, Yasuhiro; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

2016-11-01

Mg co-doping effects on scintillation properties of Ce:Lu1Gd2(Ga,Al)5O12 (LGGAG) were investigated. Mg 200 ppm co-doped Ce:LGGAG single crystals were prepared by micro pulling down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg co-doping. Ce4+ charge transfer absorption was observed below 300 nm in Mg,Ce:LGGAG which is in good agreement with previous reports. The scintillation decay times were accelerated by Mg co-doping.

Vacancy-induced brittle to ductile transition of W-M co-doped Al3Ti (M=Si, Ge, Sn and Pb).

PubMed

Zhu, Mingke; Wu, Ping; Li, Qiulin; Xu, Ben

2017-10-25

We investigated the effect of vacancy formation on brittle (D0 22 ) to ductile (L1 2 -like) transition in Al 3 Ti using DFT calculations. The well-known pseudogap on the density of states of Al 3 Ti migrates towards its Fermi level from far above, via a W - M co-doping strategy, where M is Si, Ge, Sn or Pb respectively. In particular, by a W - M co-doping the underline electronic structure of the pseudogap approaches an octahedral (L1 2 : t 2g , e g ) from the tetragonal (D0 22 : e g , b 2g , a 1g , b 1g ) crystal field. Our calculations demonstrated that (1) a W-doping is responsible for the close up of the energy gap between a 1g and b 1g so that they tend to merge into an e g symmetry, and (2) all M-doping lead to a narrower gap between e g and b 2g (moving towards a t 2g symmetry). Thus, a brittle to ductile transition in Al 3 Ti is possible by adopting this W - M co-doping strategy. We further recommend the use of W-Pb co-doped Al 3 Ti to replace the less anodic Al electrode in Al-battery, due to its improved ductility and high Al diffusivity. Finally this study opens a new field in physics to tailor mechanical properties by manipulating electron energy level(s) towards higher symmetry via vacancy optimization.

Effect of cobalt doping on structural and optical properties of ZnO nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, J.; Chanda, A., E-mail: anupamamatsc@gmail.com; Gupta, S.

Cobalt doped ZnO nanoparticles of uniform sizes were prepared by a chemical method using ZnCl{sub 2} and NaOH as the source materials. The formation of Co-doped ZnO nanoparticles was confirmed by transmission electron microscopy (TEM), high resolution TEM (HR-TEM) and selected area electron diffraction (SAED) studies. The optical properties of obtained products were examined using room temperature UV-visible and FTIR spectroscopy. SAED of cobalt doped ZnO nanoparticles shows homogeneous distribution of nanoparticles with hexagonal structure. The HRTEM image of the Co-doped ZnO nanoparticles reveals a clear lattice spacing of 0.52 nm corresponding to the interplanar spacing of wurtzite ZnO (002) plane.more » The absorption band at 857 cm{sup −1} in FTIR spectra confirmed the tetrahedral coordination of Zn and a shift of absorption peak to shorter wavelength region and decrease in absorbance with Co doping.is observed in UV-Visible spectra.« less

Li+, Na+ and K+ co-doping effects on scintillation properties of Ce:Gd3Ga3Al2O12 single crystals

NASA Astrophysics Data System (ADS)

Yoshino, Masao; Kamada, Kei; Kochurikhin, Vladimir V.; Ivanov, Mikhail; Nikl, Martin; Okumura, Satoshi; Yamamoto, Seiichi; Yeom, Jung Yeol; Shoji, Yasuhiro; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

2018-06-01

Ce0.5%: Ce:Gd3Ga3Al2O12(GGAG) single crystals co-doped with 500at.ppm Li+, Na+ and K+ were grown by using the micro-pulling down method. The smooth Ce4+ charge transfer absorption below 350 nm and decay time acceleration were observed in Li co-doped sample. Na+ and K+ co-doping did not show a large effect on the acceleration of decay time compared with Li co-doping. Ce0.5%:GGAG single crystals co-doped with 500 at.ppm Li+ were also grown by the Czochralski method. Optical, scintillation properties and timing performance were evaluated to investigate the effect of univalent alkali metal ions co-doping on Ce:GGAG scintillators. The scintillation decay curves were accelerated by Li co-doping: the decay time was significantly accelerated to 54.8 ns (47%) for the faster component and 158 ns (53%) for the slower component. The light output was 94% of the non co-doped Ce:GGAG standard. The coincidence time resolution was improved to 258 ps by Li co-doping.

Stability and band offsets between c-plane ZnO semiconductor and LaAlO3 gate dielectric

NASA Astrophysics Data System (ADS)

Wang, Jianli; Chen, Xinfeng; Wu, Shuyin; Tang, Gang; Zhang, Junting; Stampfl, C.

2018-03-01

Wurtzite-perovskite heterostructures composed of a high dielectric constant oxide and a wide bandgap semiconductor envision promising applications in field-effect transistors. In the present paper, the structural and electronic properties of LaAlO3/ZnO heterojunctions are investigated by first-principles calculations. We study the initial adsorption of La, Al, and oxygen atoms on ZnO (0001) and (000 1 ¯ ) surfaces and find that La atoms may occupy interstitial sites during the growth of stoichiometric ZnO (0001). The band gap of the stoichiometric ZnO (0001) surface is smaller than that of the stoichiometric ZnO (000 1 ¯ ) surface. The surface formation energy indicates that La or Al atoms may substitute Zn atoms at the nonstoichiometric ZnO (0001) surface. The atomic charges, electronic density of states, and band offsets are analyzed for the optimized LaAlO3/ZnO heterojunctions. There is a band gap for the LaAlO3/ZnO (000 1 ¯ ) heterostructures, and the largest variation in charge occurs at the surface or interface. Our results suggest that the Al-terminated LaAlO3/ZnO (000 1 ¯ ) interfaces are suitable for the design of metal oxide semiconductor devices because the valence and conduction band offsets are both larger than 1 eV and the interface does not produce any in-gap states.

Interplay of dopant, defects and electronic structure in driving ferromagnetism in Co-doped oxides: TiO(2), CeO(2) and ZnO.

PubMed

Ali, Bakhtyar; Shah, Lubna R; Ni, C; Xiao, J Q; Shah, S Ismat

2009-11-11

A comprehensive study of the defects and impurity (Co)-driven ferromagnetism is undertaken in the oxide semiconductors: TiO(2), ZnO and CeO(2). The effect of magnetic (Co(2+)) and non-magnetic (Cu(2+)) impurities in conjunction with defects, such as oxygen vacancies (V(o)), have been thoroughly investigated. Analyses of the x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) data reveal the incorporation of cobalt in the lattice, with no signature of cobalt segregation. It is shown that oxygen vacancies are necessary for the ferromagnetic coupling in the Co-doped oxides mentioned above. The possible exchange mechanisms responsible for the ferromagnetism are discussed in light of the energy levels of dopants in the host oxides. In addition, Co and Cu co-doped TiO(2) samples are studied in order to understand the role of point defects in establishing room temperature ferromagnetism. The parameters calculated from the bound magnetic polaron (BMP) and Jorgensen's optical electronegativity models offer a satisfactory explanation of the defect-driven ferromagnetism in the doped/co-doped samples.

Effect of Co and O defects on ferromagnetism in Co-doped ZnO: An X-ray absorption spectroscopic investigation

NASA Astrophysics Data System (ADS)

Singhal, Rishi K.; Jakhar, Narendra; Samariya, A.; Dolia, S. N.; Kumar, Sudhish

2018-02-01

Understanding of origin of ferromagnetism in dilute magnetic oxides (DMO's) has become one of the most challenging research problems in condensed matter physics. Here we are reporting a detailed study of magnetic properties and electronic structure of two 5% Co-doped ZnO samples (the as-prepared sample Zn0.95Co0.05O and the hydrogenated sample Zn0.95Co0.05O:H). The as-prepared sample is found to be paramagnetic while through hydrogenation, we observed inducement of remarkable ferromagnetism in it. The H-mediated magnetic transition is accompanied by electronic structure modifications with no structural deviations. To get in-depth information into electronic structure correlations of the observed ferromagnetism, we have investigated their electronic properties in detail. For this purpose, we have employed the site-selective and element-sensitive X-ray-absorption spectroscopy (XAS) in the vicinity of the Cobalt L2,3 edge, the oxygen K edge, and the Zinc L3 edge using synchrotron radiation. The Co L2,3 edge spectra clearly show that Co dopants reside at the Zn sites for both these samples and that they are tetrahedrally coordinated with the ligand O atoms. Very minor changes are observed in the Zn L3 edge spectra. However, the O 1s edge spectra display dominant additional components in the ferromagnetic hydrogenated sample Zn0.95Co0.05O:H, not observed in the as-prepared non-magnetic sample Zn0.95Co0.05O. We conclude that the observed spectral features can be attributed to the presence of O vacancies and the hybridization of Co 3d states with O 2p vacancy states. These two factors together are likely to play important role in inducement of ferromagnetic ordering in this Co-doped ZnO system. However, which of these two weighs more in this mechanism, cannot be pinpointed and more studies are required in this regard.

2 inch size Czochralski growth and scintillation properties of Li+ co-doped Ce:Gd3Ga3Al2O12

NASA Astrophysics Data System (ADS)

Kamada, Kei; Shoji, Yasuhiro; Kochurikhin, Vladimir V.; Yoshino, Masao; Okumura, Satoshi; Yamamoto, Seiichi; Yeom, Jung Yeol; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Nikl, Martin; Yoshino, Masao; Yoshikawa, Akira

2017-03-01

The 2 inch size Li 0.15 and 1.35 mol% co-doped Ce:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Li co-doping. Ce4+ CT absorption below 350 nm is clearly enhanced by Li co-doping as same as divalent ions co-doping. By 1.35 at.% Li co-doping, light yield was decrease to 88% of the Ce: GAGG standard and decay time was accelerated to 34.3ns 21.0%, 84.6ns 68.7%, 480ns 10.3%. The timing resolution measurement for a pair of 3 × 3 × 3mm3 size Li,Ce:GAGG scintillator crystals was performed using Si-PMs and the timing resolution of the 1.35 at.% Li co-doped Ce:GAGG was 218ps.

Study of cobalt effect on structural and optical properties of Dy doped ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Kumar, Pawan; Pandey, Praveen C.

2018-05-01

The present study has been carried out to investigate the effect of Co doping on structural and optical properties of Dy doped ZnO nanoparticles. We have prepared pure Zinc oxide, Dy (1%) doped ZnO and Dy (1%) doped ZnO co-doped with Co(2%) with the help of simple sol-gel combustion method. The structural analysis carried out using X-ray diffraction spectra (XRD) indicates substitution of Dy and Co at Zn site of ZnO crystal structure and hexagonal crystal structure without any secondary phase formation in all the samples. The surface morphology was analyzed by transmission electron microscopy (TEM). Absorption study indicates that Dy doping causes a small shift in band edge, while Co co-doping results significant change is absorption edge as well as introduce defect level absorption in the visible region. The band gap of samples decreases due to Dy and Co doping, which can be attributed to defect level formation below the conduction band in the system.

Energy transfer upconversion in Er3+-Tm3+ codoped sodium silicate glass

NASA Astrophysics Data System (ADS)

Kumar, Vinod; Pandey, Anurag; Ntwaeaborwa, O. M.; Swart, H. C.

2018-04-01

Er3+/Tm3+ doped and codoped Na2O-SiO2-ZnO (NSZO) glasses were prepared by the conventional melt-quenching method. The amorphous nature of the prepared glasses was confirmed by the X-ray diffraction analysis. The optical absorption spectrum displayed several peaks, which correspond to Er3+ and Tm3+ dopant ions embedded into the NSZO glass. Both dopants experienced upconversion emission under 980 nm excitation. Efficient energy transfer from Er3+ to Tm3+ was observed in the co-doped samples to enhance the near infrared emission of the Tm3+ ions.

Hybrid TiO2/ZnO and TiO2/Al plasmon impregnated ZnO nanocomposite photoanodes for DSSCs: synthesis and characterisation

NASA Astrophysics Data System (ADS)

Pugazhendhi, K.; D’Almeida, Steven; Naveen Kumar, P.; Sahaya Selva Mary, J.; Tenkyong, Tenzin; Sharmila, D. J.; J, Madhavan; Merline Shyla, J.

2018-04-01

The proposed work reports the synthesis and characterisation of novel and hybrid nanocomposites TiO2/ZnO and TiO2/Al plasmon impregnated ZnO, prepared using sol-gel method. X-Ray Diffraction analysis confirmed the crystalline nature of the nanocomposites with high degree of purity and the crystallite size was found to be 22 nm (TiO2/ZnO) and 21 nm (TiO2/Al-ZnO) using Scherrer’s formula. The surface chemistry, elemental compositions and purity were investigated and established using Energy Dispersive X-ray Analysis. The specific surface area of TiO2/ZnO was observed to be 23 m2 g‑1 whereas on comparison, a slight decrease was observed in the case of TiO2/Al-ZnO to 19 m2 g‑1 from Brunauer–Emmett–Teller analysis and in addition, both the samples were identified to be mesoporous in nature. The vibrational assignments were observed using Fourier Transform Infra-Red spectroscopy and results confirmed the existence of TiO2, ZnO and Al groups. The electrical response of the nanocomposites to the incident radiation with applied electric field was examined using Field Dependent Dark and Photo conductivity studies. The observed measurements revealed that the photocurrent values are greater than the dark currents which confirmed the photoconductive nature of the nanocomposites. While both the prepared nanocomposites qualify as good candidates for usage as efficient photoanodes for DSSCs, TiO2/Al-ZnO indicates a slight edge over the other.

Colossal dielectric permittivity in (Al + Nb) co-doped rutile SnO2 ceramics with low loss at room temperature

NASA Astrophysics Data System (ADS)

Song, Yongli; Wang, Xianjie; Zhang, Xingquan; Qi, Xudong; Liu, Zhiguo; Zhang, Lingli; Zhang, Yu; Wang, Yang; Sui, Yu; Song, Bo

2016-10-01

The exploration of colossal dielectric permittivity (CP) materials with low dielectric loss in a wide range of frequencies/temperatures continues to attract considerable interest. In this paper, we report CP in (Al + Nb) co-doped rutile SnO2 ceramics with a low dielectric loss at room temperature. Al0.02Nb0.05Sn0.93O2 and Al0.03Nb0.05Sn0.92O2 ceramics exhibit high relative dielectric permittivities (above 103) and low dielectric losses (0.015 < tan δ < 0.1) in a wide range of frequencies and at temperatures from 140 to 400 K. Al doping can effectively modulate the dielectric behavior by increasing the grain and grain boundary resistances. The large differences in the resistance and conductive activation energy of the grains and grain boundaries suggest that the CP in co-doped SnO2 ceramics can be attributed to the internal barrier layer capacitor effect.

Spectroscopic properties of Tm3+/Al3+ co-doped sol-gel silica glass

NASA Astrophysics Data System (ADS)

Wang, Xue; Lou, Fengguang; Wang, Shikai; Yu, Chunlei; Chen, Danping; Hu, Lili

2015-04-01

Tm3+/Al3+ co-doped silica glass was prepared by sol-gel method combined with high temperature sintering. Glasses with compositions of xTm2O3-15xAl2O3-(100 - 16x) SiO2 (in mol%, x = 0.1, 0.3, 0.5, 0.8 and 1.0) were prepared. The high thulium doped silica glass was realized. Their spectroscopic parameters were calculated and analyzed by Judd-Ofelt theory. Large absorption cross section (4.65 × 10-21 cm2 at 1668 nm) and stimulated emission cross section (6.00 × 10-21 cm2 at 1812 nm), as well as low hydroxyl content (0.180 cm-1), long fluorescence lifetime (834 μs at 1800 nm), large σem × τrad (30.05 × 10-21 cm2 ms) and large relative intensity ratio of the 1.8 μm (3F4 → 3H6) to 1.46 (3H4 → 3F4) emissions (90.33) are achieved in this Tm3+/Al3+ co-doped silica glasses. According to emission characteristics, the optimum thulium doping concentration is around 0.8 mol%. The cross relaxation (CR) between ground and excited states of Tm3+ ions was used to explain the optimum thulium doping concentration. These results suggest that the sol-gel method is an effective way to prepare Tm3+ doped silica glass with high Tm3+ doping and prospective spectroscopic properties.

Origins of low resistivity in Al ion-implanted ZnO bulk single crystals

NASA Astrophysics Data System (ADS)

Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

2011-06-01

The origins of low resistivity in Al ion-implanted ZnO bulk single crystals are studied by combining Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), photoluminescence (PL), and Van der Pauw methods. The Al-ion implantation (peak concentration: 2.6 × 1020cm-3) into ZnO is performed using a multiple-step energy. The resistivity decreases from ˜104 Ω cm for un-implanted ZnO to 1.4 × 10-1 Ω cm for as-implanted, and reaches 6.0 × 10-4 Ω cm for samples annealed at 1000 °C. RBS and NRA measurements for as-implanted ZnO suggest the existence of the lattice displacement of Zn (Zni) and O (Oi), respectively. After annealing at 1000 °C, the Zni related defects remain and the Oi related defects disappear. The origin of the low resistivity in the as-implanted sample is attributed to the Zni (˜30 meV [Look et al., Phys. Rev. Lett. 82, 2552 (1999)]). In contrast, the origin of the low resistivity in the sample annealed at 1000 °C is assigned to both of the Zni related defects and the electrically activated Al donor. A new PL emission appears at around 3.32 eV after annealing at 1000 °C, suggesting electrically activated Al donors.

Growth and properties of electrodeposited transparent Al-doped ZnO nanostructures

NASA Astrophysics Data System (ADS)

Baka, O.; Mentar, L.; Khelladi, M. R.; Azizi, A.

2015-12-01

Al-doped zinc oxide (AZO) nanostructures were fabricated on fluorine-doped tin-oxide (FTO)- coated glass substrates by using electrodeposition. The effects of the doping concentration of Al on the morphological, microstructural, electrical and optical properties of the nanostructures were investigated. From the field emission scanning electron microscopy (FE-SEM) observation, when the amount of Al was increased in the solution, the grains size was observed to decreases. The observed changes in the morphology indicate that Al acts as nucleation centers in the vacancy sites of ZnO and destroys the crystalline structure at high doping level. Effectively, the X-ray diffraction (XRD) analysis indicated that the undoped and the doped ZnO nanostructures has a polycrystalline nature and a hexagonal wurtzite structure with a (002) preferential orientation. The photoluminescence (PL) room-temperature measurements showed that the incorporation of Al in the Zn lattice can improve the intensity of ultraviolet (UV) emission, thus suggesting its greater prospects for use in UV optoelectronic devices.

Effect of in situ Al doping on structure and optical properties of ZnO nanowires grown by MOCVD

NASA Astrophysics Data System (ADS)

Souissi, H.; Jabri, S.; Souissi, A.; Lusson, A.; Galtier, P.; Meftah, A.; Sallet, V.; Oueslati, M.

2018-01-01

Al-doped ZnO nanowires (NWs) were grown on C-axis oriented sapphire by metal organic chemical vapor deposition using dimethylzinc-triethylamine (DMZn-TEN), nitrogen dioxide (NO2) and TMAl as zinc, oxygen and aluminum doping sources respectively. The NWs morphology has been characterized by scanning electron microscopy and transmission electron microscopy. The photoluminescence (PL) spectra exhibit a strong excitonic transition bond that confirms the Al incorporation in the ZnO NWs. Raman results support PL conclusion by showing additional modes in Al-doped ZnO NWs at nearly 270, 510, 579 and 641 cm-1. The micro-Raman scattering analysis along a single Al-doped ZnO needle-like NW shows an increase of the Al concentration from the basis to the tip of the wire.

A Density Functional Theory Study of Codoping Characteristics of Sulfur with Alkaline Earth in Delafossite CuAlO2

NASA Astrophysics Data System (ADS)

Liu, Qi-Jun; Qin, Han; Liu, Zheng-Tang

2016-04-01

The structural, electronic properties and formation energies of sulfur and alkaline earth codoped delafossite CuAlO2 have been investigated using the first-principles density functional theory calculations. Our results reveal that the volume of codoping systems increases with the increasing atomic radius of metal atoms. The formation energies under different growth conditions have been calculated, showing that the codoping systems are formed easily under O-rich growth conditions. Electronic band structures and density of states have been obtained. The decreased bandgaps, enhanced covalence and appearance of electron acceptors after codoping are all good for p-type conductivity. Supported by the National Natural Science Foundation of China under Grant Nos. 11347199, 51402244, and 11547311, the Specialized Research Fund for Doctoral Program of Higher Education of China under Grant No. 20130184120028, the Fundamental Research Fund for the Central Universities, China under Grant Nos. 2682014CX084, 2682014ZT30, and 2682014ZT31, and the fund of the State Key Laboratory of Solidification Processing in NWPU under Grant No. SKLSP201511

Al decorated ZnO thin-film photoanode for SPR-enhanced photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Li, Hongxia; Li, Xin; Dong, Wei; Xi, Junhua; Wu, Xin

2018-06-01

Photoelectrochemical (PEC) water splitting has been considered to be a promising approach to ease the energy and environmental crisis. Herein, Al decorated ZnO thin films are successfully achieved through a facile dc magnetron-sputtering method followed with Al evaporation for further enhanced PEC performance. The Al/ZnO thin film with 60 s Al evaporating time exhibits the highest photocurrent density under AM1.5G and visible light irradiation, which are more than 5 and 3 times as the pure ZnO film, respectively. Such surface modification by Al not only enlarges the visible light absorption based on surface plasmonic resonance effect, but facilitates the charge separation and transportation at the electrode/electrolyte interface. Finally, a possible mechanism is proposed for the photocatalytic activity enhancement of Al/ZnO thin film photoanode.

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

NASA Astrophysics Data System (ADS)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment

NASA Astrophysics Data System (ADS)

Katayama-Yoshida, H.; Nishimatsu, T.; Yamamoto, T.; Orita, N.

2001-10-01

We review our new valence control method of a co-doping for the fabrication of low-resistivity p-type GaN, p-type AlN and n-type diamond. The co-doping method is proposed based upon ab initio electronic structure calculation in order to solve the uni-polarity and the compensation problems in the wide band-gap semiconductors. In the co-doping method, we dope both the acceptors and donors at the same time by forming the meta-stable acceptor-donor-acceptor complexes for the p-type or donor-acceptor-donor complexes for the n-type under thermal non-equilibrium crystal growth conditions. We propose the following co-doping method to fabricate the low-resistivity wide band-gap semiconductors; p-type GaN: [Si + 2 Mg (or Be)], [H + 2 Mg (or Be)], [O + 2 Mg (or Be)], p-type AlN: [O + 2 C] and n-type diamond: [B + 2 N], [H + S], [H + 2 P]. We compare our prediction of the co-doping method with the recent successful experiments to fabricate the low-resistivity p-type GaN, p-type AlN and n-type diamond. We show that the co-doping method is the efficient and universal doping method by which to avoid carrier compensation with an increase of the solubility of the dopant, to increase the activation rate by decreasing the ionization energy of acceptors and donors, and to increase the mobility of the carrier.

Properties of transparent (Gd,Lu)3(Al,Ga)5O12:Ce ceramic with Mg, Ca and Ce co-dopants

NASA Astrophysics Data System (ADS)

Wang, Yimin; Baldoni, Gary; Brecher, Charles; Rhodes, William H.; Shirwadkar, Urmila; Glodo, Jarek; Shah, Ishaan; Ji, Chuncheng

2015-08-01

Cerium activated mixed lutetium/gadolinium- and aluminum/gallium-based garnets have great potential as host scintillators for medical imaging applications. (Gd,Lu)3(Al,Ga)5O12:Ce and denoted as GLuGAG feature high effective atomic number and good light yield, which make it particularly attractive for Positron Emission Tomography (PET) and other γ-ray detection applications. For PET application, rapid decay and good timing resolution are extremely important. Most Ce-doped mixed garnet materials such as GLuGAG:Ce, have their main decay component at around 80 ns. However, it has been reported that the decays of some single crystal scintillators (e.g., LSO and GGAG) can be effectively accelerated by codoping with selected additives such as Ca, Mg and B. In this study, transparent polycrystalline (Gd,Lu)3(Al,Ga)5O12:Ce ceramics codoped with Ca or Mg or additional Ce, were fabricated by the sinter-HIP approach. It was found the transmission of the ceramics are closely related to the microstructure of the ceramics. As the co-dopant levels increase, 2nd phase occurs in the ceramic and thus transparency of the ceramic decreases. Ca and Mg co-doping in GLuGAG:Ce ceramic effectively accelerate decays of GLuGAG:Ce ceramics at a cost of light output. However, additional Ce doping in the GLuGAG:Ce has no benefit on improving decay time but, on the other hand, reduces transmission, light output. The mechanism under the different scintillation behaviors with Mg, Ca and Ce dopants are discussed. The results suggest that decay time of GLuGAG:Ce ceramics can be effectively tailored by co-doping GLuGAG:Ce ceramic with Mg and Ca for applications with optimal timing resolution.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

NASA Astrophysics Data System (ADS)

Liu, Shiying; Peng, Sunjuan; Ma, Jun; Li, Guojian; Qin, Xuesi; Li, Mengmeng; Wang, Qiang

2017-04-01

This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (ρ) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 × 10-3 Ω·m at 210 °C. However, the ρ of the Al-doped ZnO films is less than 10-5 Ω·m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 μV/K and -3.415 μV/K at 210 °C, respectively. Power factor reaches the maximum value (3.198 × 10-4 W/m·K2) at 210 °C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films.

High-quality ZnO growth, doping, and polarization effect

NASA Astrophysics Data System (ADS)

Kun, Tang; Shulin, Gu; Jiandong, Ye; Shunming, Zhu; Rong, Zhang; Youdou, Zheng

2016-03-01

The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding (1) the development of high-quality epitaxy techniques, (2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and (3) the design, realization, and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an iso-valent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO. Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk. Project supported by the National Natural Science Foundation of China (Nos. 61025020, 61274058, 61322403, 61504057, 61574075), the Natural Science Foundation of Jiangsu Province (Nos. BK2011437, BK20130013, BK20150585), the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities.

Optical characterization of pure and Al-doped ZnO prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Belka, Radosław; Keczkowska, Justyna; Kasińska, Justyna

2016-09-01

In this paper the preparation process and optical characterization of pure and Al3+ doped zinc oxide (Al:ZnO) coatings will be presented. ZnO based materials have been studied extensively due to their potential applications in optoelectronic devices as conductive gas sensors, transparent conductive, electrodes, solar cell windows, varistors, UVfilters or photovoltaic cells. It is II-VI semiconductor with wide-band gap of 3.37 eV and large exciton binding energy of 60meV. It is possible to improve the conductivity of ZnO coating by intentionally doping ZnO with aluminium ions during preparation process. Such transparent and conducting thin films, known as AZO (Aluminium Zinc Oxide) films, are very good candidate for application as transparent conducting materials in many optoelectronic devices. The well-known sol-gel method is used for preparation of solution, coated on glass substrates by dip coating process. Prepared samples were investigated by Raman and UV-VIS spectroscopy. Transmittance as well as specular and diffuse reflectance spectroscopy methods were used for studies of optical parameters. We found that Al admixture influences on optical bandgap of ZnO.

KH+Ti co-doped NaAlH4 for high-capacity hydrogen storage

NASA Astrophysics Data System (ADS)

Wang, Ping; Kang, Xiang-Dong; Cheng, Hui-Ming

2005-10-01

A method for preparation of Ti-doped NaAlH4 with high hydrogen capacity was developed, in which the NaH/Al mixture was mechanically milled with a catalytic amount of KH together with metallic Ti. The addition of KH was found to result in a pronounced improvement in the dehydriding performance of the Na3AlH6/NaH+Al step. As a result, the practical cycling hydrogen capacity has been markedly enhanced from 3.3 wt % for the Ti-doped hydride to 4.7 wt % for KH+Ti co-doped material. Moreover, the pronounced enhancement on hydrogen capacity arising upon adding KH was observed to persist in the following dehydrogenation/hydrogenation cycles. Structural investigation shows that the addition of KH has led to a lattice expansion. Moreover, it was found that the enthalpy change of the Na3AlH6/NaH+Al decomposition step underwent a considerable decrease upon adding KH. Therefore, the observed property improvement may be ascribed to a favorable thermodynamic adjustment arising upon the addition of KH.

Effect of Pre-Annealing on Thermal and Optical Properties of ZnO and Al-ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saravanan, P.; Gnanavelbabu, A.; Pandiaraj, P.

Zinc oxide (ZnO) nanoparticles were synthesized by a simple solution route method using zinc acetate as the precursor and ethanol as the solvent. At a temperature of 60∘C, a clear homogenous solution is heated to 100∘C for ethanol evaporation. Then the obtained precursor powder is annealed at 600∘C for the formation of ZnO nanocrystalline structure. Doped ZnO particle is also prepared by using aluminum nitrate nonahydrate to produce aluminum (Al)-doped nanoparticles using the same solution route method followed by annealing. Thin film fabrication is done by air evaporation method using the polymer polyvinyl alcohol (PVA). To analyze the optical and thermal properties for undoped and doped ZnO nanocrystalline thin film by precursor annealing, characterizations such as UV, FTIR, AFM, TGA/DTA, XRD, EDAX and Photoluminescence (PL) were also taken. It was evident that precursor annealing had great influence on thermal and optical properties of thin films while ZnO and AZO film showed low crystallinity and intensity than in the powder form. TGA/DTA suggests pre-annealing effect improves the thermal stability, which ensures that Al ZnO nanoparticle can withstand at high temperature too which is the crucial advantage in the semiconductor devices. UV spectroscopy confirmed the presence of ZnO nanoparticles in the thin film by an absorbance peak observed at 359nm with an energy bandgap of 3.4eV. A peak obtained at 301nm with an energy bandgap of 4.12eV shows a blue shift due to the presence of Al-doped ZnO nanoparticles. Both ZnO and AZO bandgap increased due to precursor annealing. In this research, PL spectrum is also studied in order to determine the optical property of the nanoparticle embedded thin film. From PL spectrum, it is observed that the intensity of the doped ZnO is much more enhanced as the dopant concentration is increased to 1wt.% and 2wt.% of Al in ZnO.

Synthesis of highly conductive thin-walled Al-doped ZnO single-crystal microtubes by a solid state method

NASA Astrophysics Data System (ADS)

Hu, Shuopeng; Wang, Yue; Wang, Qiang; Xing, Cheng; Yan, Yinzhou; Jiang, Yijian

2018-06-01

ZnO has attracted considerable attention in fundamental studies and practical applications for the past decade due to its outstanding performance in gas sensing, photocatalytic degradation, light harvesting, UV-light emitting/lasing, etc. The large-sized thin-walled ZnO (TW-ZnO) microtube with stable and rich VZn-related acceptors grown by optical vapor supersaturated precipitation (OVSP) is a novel multifunctional optoelectronic material. Unfortunately, the OVSP cannot achieve doping due to the vapor growth process. To obtain doped TW-ZnO microtubes, a solid state method is introduced in this work to achieve thin-walled Al-doping ZnO (TW-ZnO:Al) microtubes with high electrical conductivity. The morphology and microstructures of ZnO:Al microtubes are similar to undoped ones. The Al3+ ions are confirmed to substitute Zn2+ sites and Zn(0/-1) vacancies in the lattice of ZnO by EDS, XRD, Raman and temperature-dependent photoluminescence analyses. The Al dopant acting as a donor level offers massive free electrons to increase the carrier concentrations. The resistivity of the ZnO:Al microtube is reduced down to ∼10-3 Ω·cm, which is one order of magnitude lower than that of the undoped microtube. The present work provides a simple way to achieve doped ZnO tubular components for potential device applications in optoelectronics.

Deposition of undoped and Al doped ZnO thin films using RF magnetron sputtering and study of their structural, optical and electrical properties

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Shrisha B., V.; Balakrishna, K. M.; Naik, K. Gopalakrishna

2017-05-01

Undoped ZnO and Al doped ZnO thin films were deposited on glass and p-Si(100) substrates by RF magnetron sputtering technique at room temperature using homemade targets. ZnO target containing 5 at% of Al2O3 as doping source was used for the growth of Al doped ZnO thin films. XRD revealed that the films have hexagonal wurtzite structure with high crystallinity. Morphology and chemical composition of the films have been indicated by FESEM and EDAX studies. A blue shift of the band gap energy and higher optical transmittance has been observed in the case of Al doped ZnO (ZnO:Al) thin films with respect to the ZnO thin films. The as deposited films on p-Si were used to fabricate n-ZnO/p-Si(100) and n-ZnO:Al/p-Si(100) heterojunction diodes and their room temperature current-voltage characteristics were studied.

Transparent nanocrystalline ZnO and ZnO:Al coatings obtained through ZnS sols

NASA Astrophysics Data System (ADS)

Kolobkova, E. V.; Evstropiev, S. K.; Nikonorov, N. V.; Vasilyev, V. N.; Evstropyev, K. S.

2017-11-01

Thin and uniform ZnO and ZnO:Al coatings were prepared on glass surfaces by using film-forming colloidal solutions containing small ZnS nanoparticles and polyvinylpyrrolidone as a polymer stabilizer. Film-forming ZnS sols were synthesized in the mixed water-propanol-2 solutions by chemical reaction between zinc nitrate and sodium sulfide. The addition of modifying component such as Al(NO3)3 into the film-forming solutions allows one to obtain thin and uniform ZnO:Al coatings. An increase in the sodium sulfide content in film-forming solutions leads to the growth of light absorption in the UV. The evolution of a coating material at all technological stages from the ZnS sols up to the transparent ZnO and ZnO:Al2O3 coatings (the latter kind being denoted further, in accord with a common practice, by ZnO:Al) was studied using the optical spectroscopy, XRD analysis, DSC-TGA, and SEM methods. The chemical processes of decomposing salts and the polymer occur by heating the intermediate composite ZnS/polyvinylpyrrolidone coatings in the 280-500 °C temperature range. Experimental data show that the ZnO and ZnO:Al coatings prepared consist of the slightly elongated oxide nanoparticles. These coatings fully cover the glass surface and demonstrate a high transparency in the UV and visible.

Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

PubMed

Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

2015-01-01

Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

Longitudinal optical phonon-plasmon coupled modes of degenerate Al-doped ZnO films

NASA Astrophysics Data System (ADS)

Ding, K.; Hu, Q. C.; Lin, W. W.; Huang, J. K.; Huang, F.

2012-07-01

We have investigated the interaction between carriers and polar phonons by using Raman scattering spectroscopy in highly conductive Al-doped ZnO films grown by metalorganic chemical vapor deposition. Different from the longitudinal optical phonon-plasmon coupled modes (LOPPCM) observed in nondegenerate ZnO, an A1(LO)-like mode appears at the low frequency side of the uncoupled A1(LO) mode, and it monotonically shifts to higher frequencies and approaches to the uncoupled A1(LO) mode as Al composition increases. Based on line shape calculations, the A1(LO)-like mode is assigned to the large wave-vector LOPPCM arising from nonconserving scattering dominated by the Al impurity-induced Fröhlich mechanism. Benefiting from the nonmonotonic Al composition dependence of the electron density, it is revealed that the LOPPCM depends mainly on the doping level but not the carrier concentration.

Role of Ce4+ in the Scintillation Mechanism of Codoped Gd3Ga3Al2O12∶Ce

NASA Astrophysics Data System (ADS)

Wu, Yuntao; Meng, Fang; Li, Qi; Koschan, Merry; Melcher, Charles L.

2014-10-01

To control the time-response performance of widely used cerium-activated scintillators in cutting-edge medical-imaging devices, such as time-of-flight positron-emission tomography, a comprehensive understanding of the role of Ce valence states, especially stable Ce44, in the scintillation mechanism is essential. However, despite some progress made recently, an understanding of the physical processes involving Ce4+ is still lacking. The aim of this work is to clarify the role of Ce4+ in scintillators by studying Ca2+ codoped Gd3Ga3Al2O12∶Ce (GGAG ∶Ce). By using a combination of optical absorption spectra and x-ray absorption near-edge spectroscopies, the correlation between Ca2+ codoping content and the Ce4+ fraction is seen. The energy-level diagrams of Ce3+ and Ce4+ in the Gd3Ga3Al2O12 host are established by using theoretical and experimental methods, which indicate a higher position of the 5d1 state of Ce4+ in the forbidden gap in comparison to that of Ce3+. Underlying reasons for the decay-time acceleration resulting from Ca2+ codoping are revealed, and the physical processes of the Ce4+-emission model are proposed and further demonstrated by temperature-dependent radioluminescence spectra under x-ray excitation.

Photovoltaic Conversion Enhancement of a Carbon Quantum Dots/p-Type CuAlO2/n-Type ZnO Photoelectric Device.

PubMed

Pan, Jiaqi; Sheng, Yingzhuo; Zhang, Jingxiang; Huang, Peng; Zhang, Xin; Feng, Boxue

2015-04-22

Carbon quantum dots (C QDs)/p-type CuAlO2/n-type ZnO photoelectric bilayer film composites were prepared by a simple route, through which ZnO films were sputtered on crystal quartz substrates and CuAlO2 films were prepared by sol-gel on ZnO films and then these bilayer films were composited with C QDs on their surface. The characterization results indicated that C QDs were well combined with the surface of the CuAlO2 films. The photovoltage and photocurrent of these bilayer film composites were investigated under illumination and darkness switching, which demonstrated to be significantly enhanced compared with those of the CuAlO2/ZnO bilayer films. Through analysis, this enhancement of the photoconductivity was mainly attributed to C QDs with unique up-converted photoluminescence behavior.

Exploration of Al-Doped ZnO in Photovoltaic Thin Films

NASA Astrophysics Data System (ADS)

Ciccarino, Christopher; Sahiner, M. Alper

The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

The formation of tungsten doped Al2O3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

NASA Astrophysics Data System (ADS)

Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

2016-07-01

Tungsten doped Al2O3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na2WO4·2H2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al2O3, ZnO, metallic tungsten and WO3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al2O3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al2O3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al2O3/ZnO coatings is higher thanof undoped Al2O3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na2WO4·2H2O. Tungsten in Al2O3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

Zinc interstitial threshold in Al-doped ZnO film: Effect on microstructure and optoelectronic properties

NASA Astrophysics Data System (ADS)

Singh, Chetan C.; Panda, Emila

2018-04-01

In order to know the threshold quantity of the zinc interstitials that contributes to an increase in carrier concentration in the Al-doped ZnO (AZO) films and their effect on the overall microstructure and optoelectronic properties of these films, in this work, Zn-rich-AZO and ZnO thin films are fabricated by adding excess zinc (from a zinc metallic target) during their deposition in RF magnetron sputtering and are then investigated using a wide range of experimental techniques. All these films are found to grow in a ZnO hexagonal wurtzite crystal structure with strong (002) orientation of the crystallites, with no indication of Al2O3, metallic Zn, and Al. The excessively introduced zinc in these AZO and/or ZnO films is found to increase the shallow donor level defects (i.e., zinc interstitials and oxygen-related electronic defect states), which is found to significantly increase the carrier concentration in these films. Additionally, aluminum is seen to enhance the creation of these electronic defect states in these films, thereby contributing more to the overall carrier concentration of these films. However, carrier mobility is found to decrease when the carrier concentration values are higher than 4 × 1020 cm-3, because of the electron-electron scattering. Whereas the optical band gap of the ZnO films is found to increase with increasing carrier concentration because of the Burstein-Moss shift, these decrease for the AZO films due to the band gap narrowing effect caused by excess carrier concentration.

Dielectric properties and nonlinear I-V electrical behavior of (Li1+, Al3+) co-doped CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Sun, Li; Ni, Qing; Guo, Jianqin; Cao, Ensi; Hao, Wentao; Zhang, Yongjia; Ju, Lin

2018-06-01

(Li1+, Al3+) co-doped CaCu3Ti4O12 ceramics (CaCu3-2 x Li x Al x Ti4O12, x = 0.05, 0.1, 0.15) were prepared by a sol-gel method and were sintered at 1020-1080 °C for 8 h to improve the geometric microstructure, dielectric and nonlinear I-V electrical properties. Notably, very high dielectric constant of 1 × 105 with good dielectric-frequency as well as dielectric-temperature stability can be achieved in CaCu2.8Li0.1Al0.1Ti4O12 ceramic sintered at 1060 °C. The average grain sizes, resistivity and the non-Ohmic properties are also improved compared to pure CaCu3Ti4O12. These results indicate that (Li1+, Al3+) co-doping at the Cu2+ site can improve the dielectric properties of CaCu3Ti4O12, supporting the internal barrier layer capacitance effect of Schottky barriers at grain boundaries.

Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp

2015-09-28

Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm{sup 2}/V s with good stability under a negative bias stress in InWZnO thinmore » film transistors.« less

Effect of cobalt doping on the mechanical properties of ZnO nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vahtrus, Mikk; Šutka, Andris

In this work, we investigate the influence of doping on the mechanical properties of ZnO nanowires (NWs) by comparing the mechanical properties of pure and Co-doped ZnO NWs grown in similar conditions and having the same crystallographic orientation [0001]. The mechanical characterization included three-point bending tests made with atomic force microscopy and cantilever beam bending tests performed inside scanning electron microscopy. It was found that the Young's modulus of ZnO NWs containing 5% of Co was approximately a third lower than that of the pure ZnO NWs. Bending strength values were comparable for both materials and in both cases weremore » close to theoretical strength indicating high quality of NWs. Dependence of mechanical properties on NW diameter was found for both doped and undoped ZnO NWs. - Highlights: •Effect of Co doping on the mechanical properties of ZnO nanowires is studied. •Co substitutes Zn atoms in ZnO crystal lattice. •Co addition affects crystal lattice parameters. •Co addition results in significantly decreased Young's modulus of ZnO. •Bending strength for doped and undoped wires is close to the theoretical strength.« less

Electrochemical Synthesis of Highly Oriented, Transparent, and Pinhole-Free ZnO and Al-Doped ZnO Films and Their Use in Heterojunction Solar Cells.

PubMed

Kang, Donghyeon; Lee, Dongho; Choi, Kyoung-Shin

2016-10-04

Electrochemical synthesis conditions using nonaqueous solutions were developed to prepare highly transparent (T > 90%) and crystalline ZnO and Al-doped ZnO (AZO) films for use in solar energy conversion devices. A focused effort was made to produce pinhole-free films in a reproducible manner by identifying a key condition to prevent the formation of cracks during deposition. The polycrystalline domains in the resulting films had a uniform orientation (i.e., the c-axis perpendicular to the substrate), which enhanced the electron transport properties of the films. Furthermore, electrochemical Al doping of ZnO using nonaqueous media, which was demonstrated for the first time in this study, effectively increased the carrier density and raised the Fermi level of ZnO. These films were coupled with an electrodeposited p-type Cu 2 O to construct p-n heterojunction solar cells to demonstrate the utilization of these films for solar energy conversion. The resulting n-ZnO/p-Cu 2 O and n-AZO/p-Cu 2 O cells showed excellent performance compared with previously reported n-ZnO/p-Cu 2 O cells prepared by electrodeposition. In particular, replacing ZnO with AZO resulted in simultaneous enhancements in short circuit current and open circuit potential, and the n-AZO/p-Cu 2 O cell achieved an average power conversion efficiency (η) of 0.92 ± 0.09%. The electrodeposition condition reported here will offer a practical and versatile way to produce ZnO or AZO films, which play key roles in various solar energy conversion devices, with qualities comparable to those prepared by vacuum-based techniques.

Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

NASA Astrophysics Data System (ADS)

Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

2016-12-01

DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C2H2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C2H2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C2H2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C2H2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus deteriorate the wear performance of the films.

Effect of ZnO nanoparticles to mechanical properties of thixoformed Mg-Al-Zn alloy

NASA Astrophysics Data System (ADS)

Kusharjanto; Soepriyanto, Syoni; Ardian Korda, Akhmad; Adi Dwiwanto, Supono

2018-03-01

Magnesium alloys are lightweight metallic materials with low mechanical properties. Therefore, in order to meet the requirements in various industrial sector applications such as automotive, aerospace and electronic frame, improvement strength and ductility is required. The purpose of this research is to investigate the effect of adding ZnO nanoparticles to changes in microstructure, hardness, mechanical properties regarding with yield and ultimate strength. In this research, the molten Mg-Al-Zn alloy is added ZnO nanoparticles with a various range of 0, 1; 3 and 5 wt% and then cooling in the room temperature. Futhermore, Mg-Al-Zn-ZnO is heated at a temperature of 530 °C (in the semi-solid temperature range 470 °C–595 °C or 53% solid fraction) and then thixoforming process is performed. The characterization results of the thixoforming product show that, the microstructure is globular in shape with maximum hardness value of 107.14 VHN, the yield strength of 214.87 MPa, and the ultimate tensile strength of 311.25 MPa in 5 wt% ZnO nanoparticles.

Comparative study of textured and epitaxial ZnO films

NASA Astrophysics Data System (ADS)

Ryu, Y. R.; Zhu, S.; Wrobel, J. M.; Jeong, H. M.; Miceli, P. F.; White, H. W.

2000-06-01

ZnO films were synthesized by pulsed laser deposition (PLD) on GaAs and α-Al 2O 3 substrates. The properties of ZnO films on GaAs and α-Al 2O 3 have been investigated to determine the differences between epitaxial and textured ZnO films. ZnO films on GaAs show very strong emission features associated with exciton transitions as do ZnO films on α-Al 2O 3, while the crystalline structural qualities for ZnO films on α-Al 2O 3 are much better than those for ZnO films on GaAs. The properties of ZnO films are studied by comparing highly oriented, textured ZnO films on GaAs with epitaxial ZnO films on α-Al 2O 3 synthesized along the c-axis.

Photocatalytic oxidation of organic dyes with visible-light-driven codoped TiO2 photocatalysts

NASA Astrophysics Data System (ADS)

Zhang, Dongfang; Zeng, Fanbin

2011-06-01

A novel copper (II) and zinc (II) codoped TiO2 photocatalyst was synthesized by a modified sol-gel method using titanium (IV) isopropoxide, Zn(NO3)2 · 6H2O and copper(Il) nitrate as precursors. The samples were characterized by X-ray diffraction (XRD), diffuse reflectance spectroscopy (DRS) and photo-luminescence spectra (PL). The XRD results showed undoped and Zn, Cu-codoped TiO2 nanoparticles mainly including anatase phase and a tiny amount of Zn- and Cu-oxides exist in the mixed system, which is attributed to the decomposition of copper and zinc nitrates in the TiO2 gel to form CuO and ZnO and randomly dispersed on the TiO2 surface. On the basis of the optical characterization results, we found that the codoping of copper (II) and zinc (II) resulted a red shift of adsorption and lower recombination probability between electrons and holes, which were the reasons for high photocatalytic activity of Zn, Cu-codoped TiO2 nanoparticles under visible light (λ > 400 nm). The photocatalytic activity of samples was tested for degradation of methyl orange (MO) in solutions. The results indicated that the visible-light driven capability of the codoped catalyst were much higher than that of the pure TiO2 catalyst under visible irradiation. Because of the synergetic effect of copper (II) and zinc (II) element, the Zn, Cu-codoped TiO2 catalyst will show higher quantum yield and enhance absorption of visible light. In the end, a key mechanism was proposed in order to account for the enhanced activity.

Effect of magnetic field on the flux pinning mechanisms in Al and SiC co-doped MgB2 superconductor

NASA Astrophysics Data System (ADS)

Kia, N. S.; Ghorbani, S. R.; Arabi, H.; Hossain, M. S. A.

2018-07-01

MgB2 superconductor samples co-doped with 0.02 wt. Al2O3 and 0-0.05 wt. SiC were studied by magnetization - magnetic field (M-H) loop measurements at different temperatures. The critical current density has been calculated by the Bean model, and the irreversibility field, Hirr, has been obtained by the Kramer method. The pinning mechanism of the co-doped sample with 2% Al and 5% SiC was investigated in particular due to its having the highest Hirr. The normalized volume pinning force f = F/Fmax as a function of reduced magnetic field h = H/Hirr has been obtained, and the pinning mechanism was studied by the Dew-Houghes model. It was found that the normal point pinning (NPP), the normal surface pinning (NSP), and the normal volume pinning (NVP) mechanisms play the main roles. The magnetic field and temperature dependence of contributions of the NPP, NSP, and NVP pinning mechanisms were obtained. The results show that the contributions of the pinning mechanisms depend on the temperature and magnetic field. From the temperature dependence of the critical current density within the collective pinning theory, it was found that both the δl pinning due to spatial fluctuations of the charge-carrier mean free path and the δTc pinning due to randomly distributed spatial variations in the transition temperature coexist at zero magnetic field in co-doped samples. Yet, the charge-carrier mean-free-path fluctuation pinning (δl) is the only important pinning mechanism at non-zero magnetic fields.

A dual-colored bio-marker made of doped ZnO nanocrystals

NASA Astrophysics Data System (ADS)

Wu, Y. L.; Fu, S.; Tok, A. I. Y.; Zeng, X. T.; Lim, C. S.; Kwek, L. C.; Boey, F. C. Y.

2008-08-01

Bio-compatible ZnO nanocrystals doped with Co, Cu and Ni cations, surface capped with two types of aminosilanes and titania are synthesized by a soft chemical process. Due to the small particle size (2-5 nm), surface functional groups and the high photoluminescence emissions at the UV and blue-violet wavelength ranges, bio-imaging on human osteosarcoma (Mg-63) cells and histiocytic lymphoma U-937 monocyte cells showed blue emission at the nucleus and bright turquoise emission at the cytoplasm simultaneously. This is the first report on dual-color bio-images labeled by one semiconductor nanocrystal colloidal solution. Bright green emission was detected on mung bean seedlings labeled by all the synthesized ZnO nanocrystals. Cytotoxicity tests showed that the aminosilanes capped nanoparticles are non-toxic. Quantum yields of the nanocrystals varied from 79% to 95%. The results showed the potential of the pure ZnO and Co-doped ZnO nanocrystals for live imaging of both human cells and plant systems.

Defects in codoped NiO with gigantic dielectric response

NASA Astrophysics Data System (ADS)

Wu, Ping; Ligatchev, Valeri; Yu, Zhi Gen; Zheng, Jianwei; Sullivan, Michael B.; Zeng, Yingzhi

2009-06-01

We combine first-principles, statistical, and phenomenological methods to investigate the electronic and dielectric properties of NiO and clarify the nature of the gigantic dielectric response in codoped NiO. Unlike previous models which are dependent on grain-boundary effects, our model based on small polaron hopping in homogeneous material predicts the dielectric permittivity (104-5) for heavily Li- and MD -codoped NiO (MD=Ti,Al,Si) . Furthermore, we reproduce the experimental trends in dielectric properties as a function of the dopants nature and their concentrations, as well as the reported activation energies for the relaxation in Li- and Ti-codoped NiO (0.308 eV or 0.153 eV depending on the Fermi-level position). In this study, we demonstrate that small polaron hopping on dopant levels is the dominant mechanism for the gigantic dielectric response in these codoped NiO.

Effect of Al doping on performance of ZnO thin film transistors

NASA Astrophysics Data System (ADS)

Dong, Junchen; Han, Dedong; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi

2018-03-01

In this work, we investigate the Aluminum-doped Zinc Oxide (AZO) thin films and their feasibility as the active layer for thin film transistors (TFTs). A comparison on performance is made between the AZO TFTs and ZnO TFTs. The electrical properties such as saturation mobility, subthreshold swing, and on-to-off current ratio are improved when AZO is utilized as the active layer. Oxygen component of the thin film materials indicates that Al is the suppressor for oxygen defect in active layer, which improves the subthreshold swing. Moreover, based on band structure analyzation, we observe that the carrier concentration of AZO is higher than ZnO, leading to the enhancement of saturation mobility. The microstructure of the thin films convey that the AZO films exhibit much smaller grain boundaries than ZnO films, which results in the lower off-state current and higher on-to-off current ratio of AZO TFTs. The AZO thin films show huge potential to be the active layer of TFTs.

TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

NASA Astrophysics Data System (ADS)

Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

PubMed

Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

2017-07-05

To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.

A clear effect of charge compensation through Na+ co-doping on the luminescence spectra and decay kinetics of Nd3+-doped CaAl4O7

NASA Astrophysics Data System (ADS)

Puchalska, M.; Watras, A.

2016-06-01

We present a detailed analysis of luminescence behavior of singly Nd3+ doped and Nd3+, Na+ co-doped calcium aluminates powders: Ca1-xNdxAl4O7 and Ca1-2xNdxNaxAl4O7 (x=0.001-0.1). Relatively intense Nd3+ luminescence in IR region corresponding to typical 4F3/2→4IJ (J=9/2-13/2) transitions with maximum located at about 1079 nm was obtained in all samples on direct excitation into f-f levels. The effect of dopant concentration and charge compensation by co-doping with Na+ ions on morphology and optical properties were studied. The results show that both, the Nd3+ concentration and the alkali metal co-doping affected the optical properties but had no influence on the powders morphology. The studies of luminescence spectra (298 and 77 K) in a function of dopant concentration showed an increasing distortion of the local symmetry of Nd3+with raising activator content due to certain defects created in the crystal lattice. On the other hand Na+ addition led to significant narrowing of absorption and luminescence bands and also a reduction of the number of their components, showing smaller disturbance of Nd3+ ions local symmetries. Consequently, charge compensated by Na+ co-doping materials showed significantly enhanced Nd3+ luminescence. The decrease of emission intensity and luminescence lifetimes with increase of activator concentration was attributed mainly to phonon-assisted cross-relaxation processes between Nd3+ ions. Analysis with Inokuti-Hirayama model indicated dipole-dipole mechanism of ion-ion interaction. Na+ addition led to much smaller concentration quenching due to smaller clustering of dopant ions in CaAl4O7 lattice.

Growth and characterization of highly conducting Al-doped ZnO (AZO) thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Sardana, Sanjay K.; Singh, Anil; Srivastava, Sanjay K.; Pandya, Dinesh K.

2018-05-01

A comparative study of undoped ZnO and Al-doped ZnO (AZO) thin films deposited on glass substrate by spray pyrolysis has been carried out at various aqueous molar concentration of zinc acetate. The thin films deposited on glass shows the wurtzite phase of ZnO, confirmed by X-ray diffraction. The optical study shows the high transmittance over 80% in the visible regime. The band gap of AZO thin films shows a blue shift as compared to undoped ZnO, which has been attributed to Burstein-Moss shift. Heat treatment of these samples in vacuum showed the improved conductivity in compared to as-deposited thin films. The electric study shows the minimum resistivity of 8 x 10-3 Ω-cm and carrier concentration of 6.5 × 1019 /cm3 correspond to AZO thin films.

Fabrication of tantalum and nitrogen codoped ZnO (Ta, N-ZnO) thin films using the electrospay: twin applications as an excellent transparent electrode and a field emitter.

PubMed

Mahmood, Khalid; Park, Seung Bin; Sung, Hyung Jin

2013-05-01

The realization of stable p-type nitrogen-doped ZnO thin films with durable and controlled growth is important for the fabrication of nanoscale electronic and optoelectronic devices. ZnO thin films codoped with tantalum and nitrogen (Ta, N-ZnO) were fabricated by using the electrospraying method at an atmospheric pressure. X-ray diffraction (XRD) studies demonstrated that all the prepared films were polycrystalline in nature with hexagonal wurtzite structure. In addition, a shift in the XRD patterns was observed, and the crystal orientation was changed at a certain amount of nitrogen (>6 at.%) in the starting solution. Analysis of X-ray diffraction patterns and X-ray photoelectron spectra revealed that nitrogen which was combined with the zinc atom (N-Zn) was successfully doped into the ZnO crystal lattice. It was also observed that 2 at.% tantalum and 6 at.% nitrogen (2 at.% Ta and 6 at.% N) were the optimal dopant amounts to achieve the minimum resistivity of about 9.70 × 10(-5) Ω cm and the maximum transmittance of 98% in the visible region. Consequently, the field-emission characteristics of such a Ta, N-ZnO emitter can exhibit the higher current density of 1.33 mA cm(-2), larger field-enhancement factor (β) of 4706, lower turn-on field of 2.6 V μm(-1), and lower threshold field of 3.5 V μm(-1) attributed to the enhanced conductivity and better crystallinity of films. Moreover, the obtained values of resistivity were closest to the lowest resistivity values among the doped ZnO films as well as to the indium tin oxide (ITO) resistivity values that were previously studied. We confirmed that the tantalum and nitrogen atoms substitution in the ZnO lattice induced positive effects in terms of enhancing the free carrier concentration which will further improve the electrical, optical, and field-emission properties. The proposed electrospraying method was well suitable for the fabrication of Ta, N-ZnO thin films at optimum conditions with superior electrical

Ab initio calculations on the initial stages of GaN and ZnO growth on lattice-matched ScAlMgO4 (0001) substrates

NASA Astrophysics Data System (ADS)

Guo, Yao; Wang, Yanfei; Li, Chengbo; Li, Xianchang; Niu, Yongsheng; Hou, Shaogang

2016-12-01

The initial stages of GaN and ZnO epitaxial growth on lattice-matched ScAlMgO4 substrates have been investigated by ab initio calculation. The geometrical parameters and electronic structure of ScAlMgO4 bulk and (0001) surface have been investigated by density-functional first-principles study. The effects of different surface terminations have been examined through surface energy and relaxation calculations. The O-Mg-O termination is more favorable than other terminations by comparing the calculated surface energies. It should be accepted as the appropriate surface structure in subsequent calculation. The initial stages of GaN and ZnO epitaxial growths are discussed based on the adsorption and diffusion of the adatoms on reconstructed ScAlMgO4 (0001) surface. According to theoretical characterizations, N adatom on the surface is more stable than Ga. O adatom is more favorable than Zn. These observations lead to the formation of GaN and ZnO epilayer and explain experimentally-confirmed in-plane alignment mechanisms of GaN and ZnO on ScAlMgO4 substrates. Furthermore, the polarity of GaN and ZnO surfaces on ScAlMgO4 (0001) at the initial growth stage have been explored by ab initio calculation. Theoretical studies indicate that the predominant growths of Ga-polar GaN and Zn-polar ZnO are determined by the initial growth stage.

Synthesis and effect of Ce and Mn co-doping on photoluminescence characteristics of Ca6AlP5O20:Eu novel phosphors.

PubMed

Shinde, K N; Dhoble, S J

2013-01-01

A series of Ca6AlP5O20 doped with rare earths (Eu and Ce) and co-doped (Eu, Ce and Eu,Mn) were prepared by combustion synthesis. Under Hg-free excitation, Ca6AlP5O20:Eu exhibited Eu(2+) (486 nm) emission in the blue region of the spectrum and under near Hg excitation (245 nm), Ca6AlP5O20:Ce phosphor exhibited Ce(3+) emission (357 nm) in the UV range. Photoluminescence (PL) peak intensity increased in Ca6AlP5O20:Eu,Ce and Ca6AlP5O20:Eu, Mn phosphors due to co-activators of Ce(3+) and Mn(2+) ions. As a result, these ions played an important role in PL emission in the present matrix. Ca6AlP5O20:Eu, Ce and Ca6AlP5O20:Eu, Mn phosphors provided energy transfer mechanisms via Ce(3+) → Eu(2+) and Eu(2+) → Mn(2+), respectively. Eu ions acted as activators and Ce ions acted as sensitizers. Ce emission energy was well matched with Eu excitation energy in the case of Ca6AlP5O20:Eu, Ce and Eu ions acted as activators and Mn ions acted as sensitizers in Ca6AlP5O20:Eu, Mn. This study included synthesis of new and efficient phosphate phosphors. The impact of doping and co-doping on photoluminescence properties and energy transfer mechanisms were investigated and we propose a feasible interpretation. Copyright © 2012 John Wiley & Sons, Ltd.

Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Kang, B. S.; Wang, H. T.; Ren, F.; Pearton, S. J.; Morey, T. E.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2007-12-01

ZnO nanorod-gated AlGaN /GaN high electron mobility transistors (HEMTs) are demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on the gate area using low temperature hydrothermal decomposition to immobilize glucose oxidase (GOx). The one-dimensional ZnO nanorods provide a large effective surface area with high surface-to-volume ratio and provide a favorable environment for the immobilization of GOx. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when target glucose in a buffer with a pH value of 7.4 was added to the GOx immobilized on the ZnO nanorod surface. We could detect a wide range of concentrations from 0.5nMto125μM. The sensor exhibited a linear range from 0.5nMto14.5μM and an experiment limit of detection of 0.5nM. This demonstrates the possibility of using AlGaN /GaN HEMTs for noninvasive exhaled breath condensate based glucose detection of diabetic application.

Subpicosecond luminescence rise time in magnesium codoped GAGG:Ce scintillator

NASA Astrophysics Data System (ADS)

Tamulaitis, G.; Vaitkevičius, A.; Nargelas, S.; Augulis, R.; Gulbinas, V.; Bohacek, P.; Nikl, M.; Borisevich, A.; Fedorov, A.; Korjik, M.; Auffray, E.

2017-10-01

The influence of co-doping of Gd3Al2GA3O12:Ce (GAGG:Ce) scintillator with magnesium on the rise time of luminescence response was studied in two GAGG:Ce crystals grown in nominally identical conditions except of Mg co-doping in one of them. Time-resolved photoluminescence spectroscopy and free carrier absorption techniques were exploited. It is evidenced that the Mg co-doping decreases the rise time down to sub-picosecond domain. Meanwhile, the light yield decreases by ∼20%. Thus, the feasibility of exploitation of the fast rise edge in luminescence response for ultrafast timing in scintillation detectors is demonstrated. The role of Mg impurities in facilitating the excitation transfer to radiative recombination centers is discussed.

Preparation of ZnO nanoparticles showing upconversion luminescence through simple chemical method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anjana, R.; Subha, P. P.; Markose, Kurias K.

2016-05-23

Upconversion luminescence is an interesting area while considering its applications in a vast variety of fields. Rare earth ions like erbium is the most studied and efficient candidate for achieving upconversion. Erbium and ytterbium co-doped ZnO nanoparticles were prepared through co-precipitation method. A strong red emission has been obtained while exciting with 980 nm laser. Dependence of luminescence emission colour on ytterbium concentration has been studied.

Role of Ce 4 + in the scintillation mechanism of codoped Gd 3 Ga 3 Al 2 O 12 : Ce

DOE PAGES

Wu, Yuntao; Meng, Fang; Li, Qi; ...

2014-10-17

To control the time-response performance of widely used cerium-activated scintillators in cutting-edge medical-imaging devices, such as time-of-flight positron-emission tomography, a comprehensive understanding of the role of Ce valence states, especially stable Ce 4+, in the scintillation mechanism is essential. However, despite some progress made recently, an understanding of the physical processes involving Ce 4+ is still lacking. The aim of this work is to clarify the role of Ce 4+ in scintillators by studying Ca 2+ codoped Gd 3Ga 3Al 2O1 2∶Ce (GGAG∶Ce). By using a combination of optical absorption spectra and x-ray absorption near-edge spectroscopies, the correlation between Ca 2+codopingmore » content and the Ce 4+ fraction is seen. The energy-level diagrams of Ce 3+ and Ce 4+ in the Gd 3Ga 3Al 2O 12 host are established by using theoretical and experimental methods, which indicate a higher position of the 5d 1 state of Ce 4+ in the forbidden gap in comparison to that of Ce 3+. Underlying reasons for the decay-time acceleration resulting from Ca 2+ codoping are revealed, and the physical processes of the Ce 4+-emission model are proposed and further demonstrated by temperature-dependent radioluminescence spectra under x-ray excitation.« less

Photoconductive ZnO Films Printed on Flexible Substrates by Inkjet and Aerosol Jet Techniques

NASA Astrophysics Data System (ADS)

Winarski, D. J.; Kreit, E.; Heckman, E. M.; Flesburg, E.; Haseman, M.; Aga, R. S.; Selim, F. A.

2018-02-01

Zinc oxide (ZnO) thin films have remarkable versatility in sensor applications. Here, we report simple ink synthesis and printing methods to deposit ZnO photodetectors on a variety of flexible and transparent substrates, including polyimide (Kapton), polyethylene terephthalate, cyclic olefin copolymer (TOPAS), and quartz. X-ray diffraction analysis revealed the dependence of the film orientation on the substrate type and sintering method, and ultraviolet-visible (UV-Vis) absorption measurements revealed a band edge near 380 nm. van der Pauw technique was used to measure the resistivity of undoped ZnO and indium/gallium-codoped ZnO (IGZO) films. IGZO films showed lower resistivity and larger average grain size compared with undoped ZnO films due to addition of In3+ and Ga3+, which act as donors. A 365-nm light-emitting diode was used to photoirradiate the films to study their photoconductive response as a function of light intensity at 300 K. The results revealed that ZnO films printed by aerosol jet and inkjet techniques exhibited five orders of magnitude photoconductivity, indicating that such films are viable options for use in flexible photodetectors.

Optoelectronic properties of novel amorphous CuAlO2/ZnO NWs based heterojunction

NASA Astrophysics Data System (ADS)

Bu, Ian Y. Y.

2013-08-01

Amorphous p-type CuAlO2 thin films were grown onto n-type crystalline ZnO NWs forming a heterojunction through the combination of sol-gel process and hydrothermal growth method. The effects of temperature on structure and optoelectronic properties of CuAlO2 thin films were investigated through various measurement techniques. It was found that the derived CuAlO2 is Al-rich with thin film. UV-Vis measurements showed that the deposited CuAlO2 films are semi-transparent with maximum transmittance ∼82% at 500 nm. Electrical characterization and integration into pn junction confirms that the amorphous CuAlO2 is p-type and exhibited photovoltaic behavior.

Trap depth and color variation of Ce3+-Cr3+ co-doped Gd3(Al,Ga)5O12 garnet persistent phosphors

NASA Astrophysics Data System (ADS)

Asami, Kazuki; Ueda, Jumpei; Tanabe, Setsuhisa

2016-12-01

Persistent luminescent properties in Ce3+-Cr3+ codoped Gd3Al5-xGaxO12 garnet (GAGG:Ce-Cr) solid solution have been investigated. The persistent luminescent color is shifted from orange to yellowish green with increasing Ga content because Ce3+: 5d level splitting becomes much weaker. The depth of electron trap introduced by Cr codoping was estimated from the intense thermoluminescence glow peak by the initial rise method. The trap depth decreases from 0.56 eV to 0.29 eV with increasing Ga content. The shift can be explained by downshift of bottom of conduction band. From the persistent luminescence decay curve measurement after ceasing 450 nm blue illumination, the samples with x = 2.5 exhibited the longest persistent luminescence for 405 min until the luminance becomes 2 mcd/m2 in GAGG:Ce-Cr phosphors.

Influence of annealing temperature on optical properties of Al doped ZnO nanoparticles via sol-gel methods

NASA Astrophysics Data System (ADS)

Rashid, Affa Rozana Abd; Hazwani, Tuan Nur; Mukhtar, Wan Maisarah; Taib, Nur Athirah Mohd

2018-06-01

Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. The effect of dopant concentration of Al, heating treatment and annealing in reducing atmosphere on the optical properties of the thin films is discussed. Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine are used as precursor, solvent and stabilizer. In the case of AZO, aluminum nitrate nanohydrate is added to the precursor solution with an atomic percentage equal to 0 %, 1 %, 2 % and 3 % of Al. The multi thin layers are transformed into ZnO upon annealing at 450 °C and 500 °C. The optical properties such as transmittance, absorbance, band gap and refractive index of the thin films have been investigated by using UV-Visible Spectroscopy (UV-Vis). The results show that the effect of aluminium dopant concentration on the optical properties is depend on the post-heat treatment of the films. By doping with Al, the transmittance spectra in visible range increased and widen the band gap of ZnO which might due to Burstein-moss effects.

Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom in GaN monolayer

NASA Astrophysics Data System (ADS)

Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

2015-01-01

We calculate Mg-acceptor activation energy EA and investigate the influence of O-atom, occupied the Mg nearest-neighbor, on EA in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. We find that the N-atom bonded with Ga-atom is more easily substituted by O-atom and nMgGa-ON (n = 1-3) complexes are favorable and stable in the SL. The O-atom plays a dominant role in reducing EA. The shorter the Mg-O bond is, the smaller the EA is. The Mg-acceptor activation energy can be reduced significantly by nMgGa-ON δ-codoping. Our calculated EA for 2MgGa-ON is 0.21 eV, and can be further reduced to 0.13 eV for 3MgGa-ON, which results in a high hole concentration in the order of 1020 cm-3 at room temperature in (AlN)5/(GaN)1 SL. Our results prove that nMgGa-ON (n = 2,3) δ-codoping in AlN/GaN SL with ultrathin GaN-layer is an effective way to improve p-type doping efficiency in Al-rich AlGaN.

Effects of substitutional Li on the ferromagnetic response of Li co-doped ZnO:Co nanoparticles.

PubMed

Awan, Saif Ullah; Hasanain, S K; Bertino, Massimo F; Jaffari, G Hassnain

2013-04-17

Li co-doped ZnO:Co (Zn0.96-yCo0.04LiyO , y ≤ 0.1) nanoparticles were synthesized by the sol-gel technique and the correlation between the structural, electronic and magnetic properties was investigated. All the samples show a single phase hexagonal (wurtzite) ZnO structure and no secondary phases were detected. Variational trends in lattice parameters suggest the incorporation of Li in the ZnO:Co system in both substitutional and interstitial sites. Detailed electronic studies have been performed by high-resolution x-ray photoelectron spectroscopy (XPS) to determine the states of Zn, O, Co and Li. It was determined that Co substitutes at Zn sites (CoZn) while the O vacancy and Zn defects did not show much variation with increasing Li concentration. Deconvolution of the Li XPS peak showed a clear non-monotonic trend in the variation of the substitutional Li (LiZn) and interstitial Li (Lii) defects with increasing Li concentration in the particles. The magnetization study of the samples showed that the variation of the moment closely followed the trend of variation of the LiZn defects. The data are interpreted in terms of substitutional Li acting as a hole dopant and optimizing the conditions for ferromagnetism in Co-doped ZnO. Interstitial Li is not seen to be playing this role.

High carrier concentration ZnO nanowire arrays for binder-free conductive support of supercapacitors electrodes by Al doping.

PubMed

Zheng, Xin; Sun, Yihui; Yan, Xiaoqin; Sun, Xu; Zhang, Guangjie; Zhang, Qian; Jiang, Yaru; Gao, Wenchao; Zhang, Yue

2016-12-15

Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a critical strategy for tailoring the performance of nanodevices. Here, we prepared in situ Al-doped ZnO nanowire arrays by using continuous flow injection (CFI) hydrothermal method to promote the conductivity. This reasonable method offers highly stable precursor concentration for doping that effectively avoid the appearance of the low conductivity ZnO nanosheets. Benefit from this, three orders of magnitude rise of the carrier concentration from 10 16 cm -3 to 10 19 cm -3 can be achieved compared with the common hydrothermal (CH) mothed in Mott-Schottky measurement. Possible effect of Al-doping was discussed by first-principle theory. On this basis, Al-doped ZnO nanowire arrays was developed as a binder-free conductive support for supercapacitor electrodes and high capacitance was triggered. It is owing to the dramatically decreased transfer resistance induced by the growing free-moving electrons and holes. Our results have a profound significance not merely in the controlled synthesis of other doping nanomaterials by co-precipitation method but also in the application of binder-free energy materials or other materials. Copyright © 2016 Elsevier Inc. All rights reserved.

Effects of Al-Impurity Type on Formation Energy, Crystal Structure, Electronic Structure, and Optical Properties of ZnO by Using Density Functional Theory and the Hubbard-U Method.

PubMed

Wu, Hsuan-Chung; Chen, Hsing-Hao; Zhu, Yu-Ren

2016-08-01

We systematically investigated the effects of Al-impurity type on the formation energy, crystal structure, charge density, electronic structure, and optical properties of ZnO by using density functional theory and the Hubbard-U method. Al-related defects, such as those caused by the substitution of Zn and O atoms by Al atoms (Al s(Zn) and Al s(O) , respectively) and the presence of an interstitial Al atom at the center of a tetrahedron (Al i(tet) ) or an octahedron (Al i(oct) ), and various Al concentrations were evaluated. The calculated formation energy follows the order E f (Al s(Zn) ) < E f (Al i(tet) ) < E f (Al i(oct) ) < E f (Al s(O) ). Electronic structure analysis showed that the Al s(Zn) , Al s(O) , Al i(tet) , and Al i(oct) models follow n -type conduction, and the optical band gaps are higher than that of pure ZnO. The calculated carrier concentrations of the Al s(O) and Al i(tet) /Al i(oct) models are higher than that of the Al s(Zn) model. However, according to the curvature of the band structure, the occurrence of interstitial Al atoms or the substitution of O atoms by Al atoms results in a high effective mass, possibly reducing the carrier mobility. The average transmittance levels in the visible light and ultraviolet (UV) regions of the Al s(Zn) model are higher than those of pure ZnO. However, the presence of an interstitial Al atom within the ZnO crystal reduces transmittance in the visible light region; Al s(O) substantially reduces the transmittance in the visible light and UV regions. In addition, the properties of ZnO doped with various Al s(Zn) concentrations were analyzed.

Structural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol—gel dip coating process

NASA Astrophysics Data System (ADS)

Boukhenoufa, N.; Mahamdi, R.; Rechem, D.

2016-11-01

In this work, sol—gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

Influence of Dopants in ZnO Films on Defects

NASA Astrophysics Data System (ADS)

Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao

2008-12-01

The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

Isoelectronic co-doping

DOEpatents

Mascarenhas, Angelo

2004-11-09

Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

Electrochemical modification of properties of ZnO films

NASA Astrophysics Data System (ADS)

Abe, Koji; Okubo, Takamasa; Ishikawa, Hirohito

2017-12-01

The properties of Al-doped ZnO films and Li- and Al-doped ZnO films were modified by electrochemical treatment. A constant current was applied between a ZnO film and a Pt electrode in an electrolyte solution. The sheet resistance of the ZnO film increased and decreased depending on the direction of current flow during the electrochemical treatment. When the ZnO film was used as a cathode (forward biased condition), the sheet resistance of the ZnO film decreased with increasing treatment time. The optical bandgap of the H2-annealed ZnO film also depended on the direction of current flow and increased under the forward biased condition. The electrochemical treatment caused the Burstein-Moss effect.

Boron codoping of Czochralski grown lutetium aluminum garnet and the effect on scintillation properties

NASA Astrophysics Data System (ADS)

Foster, Camera; Koschan, Merry; Wu, Yuntao; Melcher, Charles L.

2018-03-01

Many single crystal scintillators, such as Lu3Al5O12, have intrinsic defects that impede their performance. In addition to doping with activators such as cerium, codoping can be used to improve the scintillation properties of a variety of scintillators. In particular, boron has been shown to improve the light yield, energy resolution, and self-absorption of other garnet scintillators, such as GGAG, when incorporated into the lattice via codoping. In this study, single crystals of LuAG: 0.2 at.% Ce codoped with varying concentrations of boron were grown via the Czochralski method at a rate of 1.2 mm/h. Results will show the effect boron codoping has on the scintillation properties of LuAG: Ce, including light yield, decay time, and self-absorption.

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

PubMed

Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

2009-04-22

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

Synthesis Al complex and investigating effect of doped ZnO nanoparticles in the electrical and optical efficiency of OLEDS

NASA Astrophysics Data System (ADS)

Shahedi, Zahra; Jafari, Mohammad Reza

2017-01-01

In this study, an organometallic complex based on aluminum ions is synthesized. And it is utilized as fluorescent material in the organic light-emitting diodes (OLEDs). The synthesized complex was characterized using XRD, UV-Vis, FT-IR as well as PL spectroscopy analyses. The energy levels of Al complex were determined by cyclic voltammetry measurements. Then, the effects of ZnO nanoparticles (NPs) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS, on the electrical and optical performance of the organic light-emitting diodes have been investigated. For this purpose, two samples containing ITO/PEDOT:PSS/PVK/Alq3/PBD/Al with two different concentration and two samples containing ITO/PEDOT:PSS:ZnO/PVK/Alq3/PBD/Al with two different concentration were prepared. Then, hole transport, electron transport and emissive layers were deposited by the spin coating method and the cathode layer (Al) was deposited by the thermal evaporation method. The OLED simulation was also done by constructing the model and choosing appropriate parameters. Then, the experimental data were collected and the results interpreted both qualitatively and quantitatively. The results of the simulations were compared with experimental data of the J-V spectra. Comparing experimental data and simulation results showed that the electrical and optical efficiency of the samples with ZnO NPs is appreciably higher than the samples without ZnO NPs.

Zirconia based Ho3+-Yb3+ codoped upconverting nanophosphors for green light emitting devices applications

NASA Astrophysics Data System (ADS)

Dutta, Joydip; Rai, Vineet Kumar

2018-04-01

Photoluminescence study of the Ho3+-Yb3+ codoped ZrO, AlZrO and YZrO nanophosphors, synthesized by chemical co-precipitation method, upon excitation at 450 and 980 nm radiations have been performed. An improvement of about ˜4.5 times in the downconversion emission intensity of green band corresponding to the 5F4, 5S2 → 5I8 transition for codoped YZrO nanophosphors compared to ZrO codoped nanophosphors has been observed. On varying the pump power density upon 980 nm excitation the colour tunability in the codoped YZrO nanophosphors has been observed. UC emission intensity of the green band arising from the Ho3+ ion in the codoped YZrO nanophosphors is enhanced about ˜22 times compared to that of the codoped ZrO nanophosphors. The absorption and UC emission study for the codoped YZrO nanophosphors dispersed in different biologically compatible solvents viz. water, methanol, ethanol and dimethyl sulfoxide (DMSO) has been performed. The green UC emission intensity of about ˜1.3 and ˜1.7 times for the efficient codoped YZrO nanophosphors dispersed in methanol compared to that dispersed in water and DMSO respectively has been observed. The absorption spectra of an efficient upconverting YZrO nanophosphors dispersed in methanol exhibit no change with the passage of time.

Parameters optimization for synthesis of Al-doped ZnO nanoparticles by laser ablation in water

NASA Astrophysics Data System (ADS)

Krstulović, Nikša; Salamon, Krešimir; Budimlija, Ognjen; Kovač, Janez; Dasović, Jasna; Umek, Polona; Capan, Ivana

2018-05-01

Al-doped ZnO crystalline colloidal nanoparticles were synthesized by a laser ablation of ZnO:Al2O3 in MilliQ water. Experiments were performed systematically by changing the number of applied laser pulses and laser output energy with the aim to affect the nanoparticle size, composition (Al/Zn ratio) and characteristics (band-gap, crystallinity). Distinctly, set of nanoparticle syntheses was performed in deionized water for comparison. SEM investigation of colloidal nanoparticles revealed that the formed nanoparticles are 30 nm thick discs with average diameters ranging from 450 to 510 nm. It was found that craters in the target formed during the laser ablation influence the size of synthesized colloidal nanoparticles. This is explained by efficient nanoparticle growth through diffusion process which take place in spatially restricted volume of the target crater. When laser ablation takes place in deionized water the synthesized nanoparticles have a mesh-like structure with sparse concentration of disc-like nanoparticles. Al/Zn ratio and band-gap energy of nanoparticles are highly influenced by the number and output energy of applied laser pulses. In addition, the procedure how to calculate the concentration of colloidal nanoparticles synthesized by laser ablation in liquids is proposed. The Al-doped ZnO colloidal nanoparticles properties were obtained using different techniques like scanning electron microscopy, optical microscopy, energy-dispersive X-ray spectroscopy, grazing-incidence X-ray diffraction, photoabsorption, photoluminescence and X-ray photoelectron spectroscopy.

Synergistic effects of Mo and F doping on the quality factor of ZnO thin films prepared by a fully automated home-made nebulizer spray technique

NASA Astrophysics Data System (ADS)

Ravichandran, K.; Dineshbabu, N.; Arun, T.; Manivasaham, A.; Sindhuja, E.

2017-01-01

Transparent conducting oxide films of undoped, Mo doped, Mo + F co-doped ZnO were deposited using a facile homemade nebulizer spray pyrolysis technique. The effects of Mo and F doping on the structural, optical, electrical and surface morphological properties were investigated using XRD, UV-vis-NIR spectroscopy, I-V and Hall probe techniques, FESEM and AFM, and XPS, respectively. The XRD analysis confirms that all the films are well crystallized with hexagonal wurtzite structure. All the synthesized samples exhibit high transmittance (above 85%) in the visible region. The current-voltage (I-V) characteristics show the ohmic conduction nature of the films. The Hall probe measurements show that the synergistic effects of Mo and F doping cause desirable improvements in the quality factor of the ZnO films. A minimum resistivity of 5.12 × 10-3 Ω cm with remarkably higher values of mobility and carrier concentration is achieved for Mo (2 at.%) + F (15 at.%) co-doped ZnO films. A considerable variation in the intensity of deep level emission caused by Mo and F doping is observed in the photoluminescence (PL) studies. The presence of the constituent elements in the samples is confirmed by XPS analysis.

Carrier Compensation Induced by Thermal Annealing in Al-Doped ZnO Films

PubMed Central

Koida, Takashi; Kaneko, Tetsuya; Shibata, Hajime

2017-01-01

This study investigated carrier compensation induced by thermal annealing in sputtered ZnO:Al (Al2O3: 0.25, 0.5, 1.0, and 2.0 wt %) films. The films were post-annealed in a N2 atmosphere at low (1 × 10−23 atm) and high (1 × 10−4 atm) oxygen partial pressures (PO2). In ZnO:Al films with low Al contents (i.e., 0.25 wt %), the carrier density (n) began to decrease at annealing temperatures (Ta) of 600 °C at low PO2. At higher PO2 and/or Al contents, n values began to decrease significantly at lower Ta (ca. 400 °C). In addition, Zn became desorbed from the films during heating in a high vacuum (i.e., <1 × 10−7 Pa). These results suggest the following: (i) Zn interstitials and Zn vacancies are created in the ZnO lattice during post-annealing treatments, thereby leading to carrier compensation by acceptor-type Zn vacancies; (ii) The compensation behavior is significantly enhanced for ZnO:Al films with high Al contents. PMID:28772501

Effect of growth time to the properties of Al-doped ZnO nanorod arrays

NASA Astrophysics Data System (ADS)

Ismail, A. S.; Mamat, M. H.; Malek, M. F.; Saidi, S. A.; Yusoff, M. M.; Mohamed, R.; Sin, N. D. Md; Suriani, A. B.; Rusop, M.

2018-05-01

Aluminum (Al)-doped zinc oxide (ZnO) nanorod array films were successfully deposited at different growth time on zinc oxide (ZnO) seed layer coated glass substrate using sol-gel immersion method. The morphology images of the films showed that the thicknesses of the films were increased parallel with the increment of growth period. The surface topology of the films displayed an increment of roughness as the growth period increased. Optical properties of the samples exposed that the percentage of transmittances reduced at higher growth time. Besides, the Urbach energy of the films slightly increased as the immersion time increased. The current-voltage (I-V) measurement indicated that the resistance increased as the immersion time increased owing to the appearance of intrinsic layer on top of the nanorods.

Co-doping as a tool for tuning the optical properties of singlewalled carbon nanotubes: A first principles study

NASA Astrophysics Data System (ADS)

Sharma, Deepa; Jaggi, Neena

2017-07-01

This paper presents a first principles study on the effect of co-doping on various optical spectra of a zigzag single-walled carbon nanotube (SWCNT). Optical spectra of a pristine SWCNT, SWCNT co-doped with Aluminum (Al) & Phosphorus (P) and another one co-doped with Al, P and Nitrogen (N) have been calculated using density functional theory (DFT).The theory has been implemented using the Cambridge sequential total energy package (CASTEP) code available as a userfriendly module with the software 'Material Studio'. Polarized and unpolarized light as well as light through polycrystalline media have been considered. The dependence of various spectra on the status of incident light presents a clear evidence of anisotropicity in the optical properties. Analysis of the simulated spectra involves calculation and comparison of different optical properties like dielectric function, reflectivity, refractive index, conductivity and loss function for the pristine and co-doped SWCNTs. Noticeable variations are observed in the optical properties on simultaneously doping the SWCNT with Al and P and then further introducing N atom into the structure so that it can be concluded that co-doping (simultaneous doping with different combinations of dopants) can be evolved as a novel and effective tool for tailoring the optical properties of SWCNTs as per the requirements while designing an optical device. It will prove to be highly significant for effective designing of SWCNT based sensitive optical devices for a variety of technological applications.

Computational discovery of lanthanide doped and Co-doped Y{sub 3}Al{sub 5}O{sub 12} for optoelectronic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhary, Kamal; Chernatynskiy, Aleksandr; Phillpot, Simon R.

2015-09-14

We systematically elucidate the optoelectronic properties of rare-earth doped and Ce co-doped yttrium aluminum garnet (YAG) using hybrid exchange-correlation functional based density functional theory. The predicted optical transitions agree with the experimental observations for single doped Ce:YAG, Pr:YAG, and co-doped Er,Ce:YAG. We find that co-doping of Ce-doped YAG with any lanthanide except Eu and Lu lowers the transition energies; we attribute this behavior to the lanthanide-induced change in bonding environment of the dopant atoms. Furthermore, we find infrared transitions only in case of the Er, Tb, and Tm co-doped Ce:YAG and suggest Tm,Ce:YAG and Tb,Ce:YAG as possible functional materials formore » efficient spectral up-conversion devices.« less

Intrinsic and spatially nonuniform ferromagnetism in Co-doped ZnO films

NASA Astrophysics Data System (ADS)

Tseng, L. T.; Suter, A.; Wang, Y. R.; Xiang, F. X.; Bian, P.; Ding, X.; Tseng, A.; Hu, H. L.; Fan, H. M.; Zheng, R. K.; Wang, X. L.; Salman, Z.; Prokscha, T.; Suzuki, K.; Liu, R.; Li, S.; Morenzoni, E.; Yi, J. B.

2017-09-01

Co doped ZnO films have been deposited by a laser-molecular beam epitaxy system. X-ray diffraction and UV spectra analysis show that Co effectively substitutes the Zn site. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy analysis indicate that there are no clusters. Co dopants are uniformly distributed in ZnO film. Ferromagnetic ordering is observed in all samples deposited under an oxygen partial pressure, PO2=10-3 , 10-5, and 10-7 torr, respectively. However, the magnetization of PO2=10-3 and 10-5 is very small at room temperature. At low temperature, the ferromagnetic ordering is enhanced. Muon spin relaxation (μ SR ) measurements confirm the ferromagnetism in all samples, and the results are consistent with magnetization measurements. From μ SR and TEM analysis, the film deposited under PO2=10-7 torr shows intrinsic ferromagnetism. However, the volume fraction of the ferromagnetism phase is approximately 70%, suggesting that the ferromagnetism is not carrier mediated. Resistivity versus temperature measurements indicate Efros variable range hopping dominates the conductivity. From the above results, we can confirm that a bound magnetic polaron is the origin of the ferromagnetism.

A clear effect of charge compensation through Na{sup +} co-doping on the luminescence spectra and decay kinetics of Nd{sup 3+}-doped CaAl{sub 4}O{sub 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puchalska, M., E-mail: malgorzata.puchalska@chem.uni.wroc.pl; Watras, A.

2016-06-15

We present a detailed analysis of luminescence behavior of singly Nd{sup 3+} doped and Nd{sup 3+}, Na{sup +} co-doped calcium aluminates powders: Ca{sub 1−x}Nd{sub x}Al{sub 4}O{sub 7} and Ca{sub 1−2x}Nd{sub x}Na{sub x}Al{sub 4}O{sub 7} (x=0.001–0.1). Relatively intense Nd{sup 3+} luminescence in IR region corresponding to typical {sup 4}F{sub 3/2}→{sup 4}I{sub J} (J=9/2–13/2) transitions with maximum located at about 1079 nm was obtained in all samples on direct excitation into f–f levels. The effect of dopant concentration and charge compensation by co-doping with Na{sup +} ions on morphology and optical properties were studied. The results show that both, the Nd{sup 3+}more » concentration and the alkali metal co-doping affected the optical properties but had no influence on the powders morphology. The studies of luminescence spectra (298 and 77 K) in a function of dopant concentration showed an increasing distortion of the local symmetry of Nd{sup 3+}with raising activator content due to certain defects created in the crystal lattice. On the other hand Na{sup +} addition led to significant narrowing of absorption and luminescence bands and also a reduction of the number of their components, showing smaller disturbance of Nd{sup 3+} ions local symmetries. Consequently, charge compensated by Na{sup +} co-doping materials showed significantly enhanced Nd{sup 3+} luminescence. The decrease of emission intensity and luminescence lifetimes with increase of activator concentration was attributed mainly to phonon-assisted cross-relaxation processes between Nd{sup 3+} ions. Analysis with Inokuti–Hirayama model indicated dipole–dipole mechanism of ion-ion interaction. Na{sup +} addition led to much smaller concentration quenching due to smaller clustering of dopant ions in CaAl{sub 4}O{sub 7} lattice.« less

Enhanced frequency upconversion in Er3+-Yb3+ codoped heavy metal oxides based tellurite glasses.

PubMed

Azam, Mohd; Rai, Vineet Kumar

2018-01-24

The spectroscopic investigations on the Er 3+ /Yb 3+ ions doped/codoped TeO 2 -ZnO (TZ), TeO 2 -ZnO-WO 3 (TZW) and TeO 2 -ZnO-WO 3 -TiO 2 (TZWTi) heavy metal oxide (HMO) glasses have been made. The absorption, photoluminescence, decay curve and Judd-Ofelt analysis have been performed to optimise the optical properties of the Er 3+ /Yb 3+ ions. The effect of incorporation of HMOs like WO 3 and TiO 2 in the Er 3+ /Yb 3+ doped/codoped TZ glass on its optical properties have been investigated. The enhancement in upconversion emission intensity has been explained on the basis of efficient energy transfer and inhomogeneous local field generation around the rare earth ions. The spectroscopic quality factor, absorption and stimulated emission cross-sections, optical gain, quantum efficiency (∼17.53%), energy transfer efficiency (∼61.64%), colour purity (∼94.7%) and ionic nature of the bonding have been determined. The Er 3+ -Yb 3+ -TZWTi glass can be used in visible lasers, yellowish green optical devices and home appliances.

Thermoelectric Properties of Al-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.

2014-06-01

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures ( T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K-2 at 600 K, surpassing the best AZO film previously reported in the literature.

Defect-induced magnetic order in pure ZnO films

NASA Astrophysics Data System (ADS)

Khalid, M.; Ziese, M.; Setzer, A.; Esquinazi, P.; Lorenz, M.; Hochmuth, H.; Grundmann, M.; Spemann, D.; Butz, T.; Brauer, G.; Anwand, W.; Fischer, G.; Adeagbo, W. A.; Hergert, W.; Ernst, A.

2009-07-01

We have investigated the magnetic properties of pure ZnO thin films grown under N2 pressure on a -, c -, and r -plane Al2O3 substrates by pulsed-laser deposition. The substrate temperature and the N2 pressure were varied from room temperature to 570°C and from 0.007 to 1.0 mbar, respectively. The magnetic properties of bare substrates and ZnO films were investigated by SQUID magnetometry. ZnO films grown on c - and a -plane Al2O3 substrates did not show significant ferromagnetism. However, ZnO films grown on r -plane Al2O3 showed reproducible ferromagnetism at 300 K when grown at 300-400°C and 0.1-1.0 mbar N2 pressure. Positron annihilation spectroscopy measurements as well as density-functional theory calculations suggest that the ferromagnetism in ZnO films is related to Zn vacancies.

Bandgap control and optical properties of β-Si3N4 by single- and co-doping from a first-principles simulation

NASA Astrophysics Data System (ADS)

Lu, Xuefeng; Gao, Xu; Ren, Junqiang; Li, Cuixia; Guo, Xin; Wei, Yupeng; La, Peiqing

2018-06-01

Bandgap tailoring of β-Si3N4 is performed by single and co-doping by using density functional theory (DFT) of PBE functional and plane-wave pseudopotential method. The results reveal that a direct bandgap transfers into an indirect one when single-doped with As element. Also, a considerate decrease of bandgap to 0.221 eV and 0.315 eV is present for Al-P and As-P co-doped systems, respectively, exhibiting a representative semiconductor property that is characteristic for a narrower bandgap. Compared with other doped systems, Al-doped system with formation energy of 2.67 eV is present for a more stable structure. From charge density difference (CDD) maps, it is found that the blue area between co-doped atoms increases, illustrating an enhancement of covalent property for Al-P and Al-As bonds. Moreover, a slightly obvious “Blue shift” phenomenon can be obtained in Al, Al-P and Al-As doped systems, indicating an enhanced capacity of responses to light, which contributes to the insight for broader applications with regard to photoelectric devices.

White light emission and effect of annealing on the Ho{sup 3+}–Yb{sup 3+} codoped BaCa{sub 2}Al{sub 8}O{sub 15} phosphor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumari, Astha; Rai, Vineet Kumar, E-mail: vineetkrrai@yahoo.co.in

Graphical abstract: The upconversion emission spectra of the Ho{sup 3+}/Yb{sup 3+} doped/codoped BaCa{sub 2}Al{sub 8}O{sub 15} phosphors with different doping concentrations of Ho{sup 3+}/Yb{sup 3+} ions along with UC emission spectrum of the white light emitting phosphor annealed at 800 °C. - Highlights: • BaCa{sub 2}Al{sub 8}O{sub 15} phosphors codoped with Ho{sup 3+}–Yb{sup 3+} have been prepared by combustion method. • Phosphor annealed at 800 °C, illuminate an intense white light upon NIR excitation. • The sample annealed at higher temperatures emits in the pure green region. • The colour emitted persists in the white region even at high pumpmore » power density. • Developed phosphor is suitable for making upconverters and WLEDs. - Abstract: The BaCa{sub 2}Al{sub 8}O{sub 15} (BCAO) phosphors codoped with suitable Ho{sup 3+}–Yb{sup 3+} dopant concentration prepared by combustion method illuminate an intense white light upon near infrared diode laser excitation. The structural analysis of the phosphors and the detection of impurity contents have been performed by using the X-Ray Diffraction, FESEM and FTIR analysis. The purity of white light emitted from the sample has been confirmed by the CIE chromaticity diagram. Also, the white light emitted from the sample persists with the variation of pump power density. The phosphors emit upconversion (UC) emission bands in the blue, green and red region (three primary colours required for white light emission) along with one more band in the near infrared region of the electromagnetic spectrum. On annealing the white light emitting sample at higher temperatures, the sample starts to emit green colour and also the intensity of green and red UC emission bands get enhanced largely.« less

Enhancing the Photocatalytic Activity of Sr4 Al14 O25 : Eu2+ , Dy3+ Persistent Phosphors by Codoping with Bi3+ Ions.

PubMed

García, Carlos R; Oliva, Jorge; Romero, Maria Teresa; Diaz-Torres, Luis A

2016-03-01

The photocatalytic activity of Bismuth-codoped Sr 4 Al 14 O 25 : Eu 2+ , Dy 3+ persistent phosphors is studied by monitoring the degradation of the blue methylene dye UV light irradiation. Powder phosphors are obtained by a combustion synthesis method and a postannealing process in reductive atmosphere. The XRD patterns show a single orthorhombic phase Sr 4 Al 14 O 25 : Eu 2+ , Dy 3+ , Bi 3+ phosphors even at high Bismuth dopant concentrations of 12 mol%, suggesting that Bi ions are well incorporated into the host lattice. SEM micrographs show irregular micrograins with sizes in the range of 0.5-20 μm. The samples present an intense greenish-blue fluorescence and persistent emissions at 495 nm, attributed to the 5d-4f allowed transitions of Eu 2+ . The fluorescence decreases as Bi concentration increases; that suggest bismuth-induced traps formation that in turn quench the luminescence. The photocatalytic evaluation of the powders was studied under both 365 nm UV and solar irradiations. Sample with 12 mol% of Bi presented the best MB degradation activity; 310 min of solar irradiation allow 100% MB degradation, whereas only 62.49% MB degradation is achieved under UV irradiation. Our results suggest that codoping the persistent phosphors with Bi 3+ can be an alternative to enhance their photocatalytic activity. © 2016 The American Society of Photobiology.

Defect mediated magnetic interaction and high Tc ferromagnetism in Co doped ZnO nanoparticles.

PubMed

Pal, Bappaditya; Giri, P K

2011-10-01

Structural, optical and magnetic studies have been carried out for the Co-doped ZnO nanoparticles (NPs). ZnO NPs are doped with 3% and 5% Co using ball milling and ferromagnetism (FM) is studied at room temperature and above. A high Curie temperature (Tc) has been observed from the Co doped ZnO NPs. X-ray diffraction and high resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption and photoluminescence studies on the doped samples show change in band structure and oxygen vacancy defects, respectively. Micro-Raman studies of doped samples shows defect related additional strong bands at 547 and 574 cm(-1) confirming the presence of oxygen vacancy defects in ZnO lattice. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear M-H loop with saturation magnetization and coercive field of the order of 4-6 emu/g and 260 G, respectively. Temperature dependence of magnetization measurement shows sharp ferromagnetic to paramagnetic transition with a high Tc = 791 K for 3% Co doped ZnO NPs. Ferromagnetic ordering is interpreted in terms of overlapping of polarons mediated through oxygen vacancy defects based on the bound magnetic polaron (BMP) model. We show that the observed FM data fits well with the BMP model involving localised carriers and magnetic cations.

Intrinsic and extrinsic doping of ZnO and ZnO alloys

NASA Astrophysics Data System (ADS)

Ellmer, Klaus; Bikowski, André

2016-10-01

In this article the doping of the oxidic compound semiconductor ZnO is reviewed with special emphasis on n-type doping. ZnO naturally exhibits n-type conductivity, which is used in the application of highly doped n-type ZnO as a transparent electrode, for instance in thin film solar cells. For prospective application of ZnO in other electronic devices (LEDs, UV photodetectors or power devices) p-type doping is required, which has been reported only minimally. Highly n-type doped ZnO can be prepared by doping with the group IIIB elements B, Al, Ga, and In, which act as shallow donors according to the simple hydrogen-like substitutional donor model of Bethe (1942 Theory of the Boundary Layer of Crystal Rectifiers (Boston, MA: MIT Rad Lab.)). Group IIIA elements (Sc, Y, La etc) are also known to act as shallow donors in ZnO, similarly explainable by the shallow donor model of Bethe. Some reports showed that even group IVA (Ti, Zr, Hf) and IVB (Si, Ge) elements can be used to prepare highly doped ZnO films—which, however, can no longer be explained by the simple hydrogen-like substitutional donor model. More probably, these elements form defect complexes that act as shallow donors in ZnO. On the other hand, group V elements on oxygen lattice sites (N, P, As, and Sb), which were viewed for a long time as typical shallow acceptors, behave instead as deep acceptors, preventing high hole concentrations in ZnO at room temperature. Also, ‘self’-compensation, i.e. the formation of a large number of intrinsic donors at high acceptor concentrations seems to counteract the p-type doping of ZnO. At donor concentrations above about 1020 cm-3, the electrical activation of the dopant elements is often less than 100%, especially in polycrystalline thin films. Reasons for the electrical deactivation of the dopant atoms are (i) the formation of dopant-defect complexes, (ii) the compensation of the electrons by acceptors (Oi, VZn) or (iii) the formation of secondary phases, for

ZnO, TiO(2), SiO(2,) and Al(2)O(3) nanoparticles-induced toxic effects on human fetal lung fibroblasts.

PubMed

Zhang, Xiao Qiang; Yin, Li Hong; Tang, Meng; Pu, Yue Pu

2011-12-01

This study aims to investigate and compare the toxic effects of four types of metal oxide (ZnO, TiO(2), SiO(2,) and Al(2)O(3)) nanoparticles with similar primary size (∼20 nm) on human fetal lung fibroblasts (HFL1) in vitro. The HFL1 cells were exposed to the nanoparticles, and toxic effects were analyzed by using MTT assay, cellular morphology observation and Hoechst 33 258 staining. The results show that the four types of metal oxide nanoparticles lead to cellular mitochondrial dysfunction, morphological modifications and apoptosis at the concentration range of 0.25-1.50 mg/mL and the toxic effects are obviously displayed in dose-dependent manner. ZnO is the most toxic nanomaterials followed by TiO(2), SiO(2), and Al(2)O(3) nanoparticles in a descending order. The results highlight the differential cytotoxicity associated with exposure to ZnO, TiO(2), SiO(2), and Al(2)O(3) nanoparticles, and suggest an extreme attention to safety utilization of these nanomaterials. Copyright © 2011 The Editorial Board of Biomedical and Environmental Sciences. Published by Elsevier B.V. All rights reserved.

Impacts of Co doping on ZnO transparent switching memory device characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simanjuntak, Firman Mangasa; Wei, Kung-Hwa; Prasad, Om Kumar

2016-05-02

The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnOmore » device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.« less

Optical Field Confinement Enhanced Single ZnO Microrod UV Photodetector

NASA Astrophysics Data System (ADS)

Wei, Ming; Xu, Chun-Xiang; Qin, Fei-Fei; Gowri Manohari, Arumugam; Lu, Jun-Feng; Zhu, Qiu-Xiang

2017-07-01

ZnO microrods are synthesized using the vapor phase transport method, and the magnetron sputtering is used to decorate the Al nanoparticles (NPs) on a single ZnO microrod. The micro-PL and I-V responses are measured before and after the decoration of Al NPs. The FDTD stimulation is also carried out to demonstrate the optical field distribution around the decoration of Al NPs on the surface of a ZnO microrod. Due to an implementation of Al NPs, the ZnO microrod exhibits an improved photoresponse behavior. In addition, Al NPs induced localized surface plasmons (LSPs) as well as improved optical field confinement can be ascribed to an enhancement of ultraviolet (UV) response. This research provides a method for improving the responsivity of photodetectors. Supported by the National Natural Science Foundation of China under Grant Nos 61475035 and 61275054, the Science and Technology Support Program of Jiangsu Province under Grant No BE2016177, and the Collaborative Innovation Center of Suzhou Nano Science and Technology.

Valency configuration of transition metal impurities in ZnO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petit, Leon; Schulthess, Thomas C; Svane, Axel

2006-01-01

We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM=Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn{sub 1-x}TM{sub x}O, the localized TM{sup 2+} configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furthermore that the (+/0) donor level is situated in the ZnO gap. Consequently, for n-type conditions, with the Fermi energy {epsilon}F close to the conduction band minimum, TM remains in the 2+ charge state, while for p-type conditions, with {epsilon}F close to themore » valence band maximum, the 3+ charge state is energetically preferred. In the latter scenario, modeled here by co-doping with N, the additional delocalized d-electron charge transfers into the entire states at the top of the valence band, and hole carriers will only exist, if the N concentration exceeds the TM impurity concentration.« less

Study of defects and vacancies in structural properties of Mn, co-doped oxides: ZnO

NASA Astrophysics Data System (ADS)

Kumar, Harish; Kaushik, A.; Alvi, P. A.; Dalela, B.; Dalela, S.

2018-05-01

The paper deals with the Structural properties on Mn, Co doped oxides ZnO samples using XRD, Positron Annihilation Lifetime (PAL) Spectra and Raman Spectra. The Mn, Co doped ZnO samples crystallize in a wurtzite structure without any impurity phases in XRD Spectra. The defect state of these samples has been investigated by using positron annihilation lifetime (PAL) spectroscopy technique in which all the relevant lifetime parameters are measured for all the spectra. The results are explained in the direction of doping concentration in these samples in terms of defects structure on Zn lattice site VZn and oxygen defects Vo.

Tunable color emission via energy transfer in co-doped Ce3+/Dy3+: Li2O-LiF-B2O3-ZnO glasses for photonic applications

NASA Astrophysics Data System (ADS)

Vijayalakshmi, L.; Naveen Kumar, K.; Srinivasa Rao, K.; Hwang, Pyung

2017-10-01

A set of co-doped (Ce3+/Dy3+): LBZ glasses were prepared by standard melt quenching technique. The pertinent absorption bands were observed in the optical absorption spectrum of co-doped Ce3+/Dy3+: LBZ glasses. We have been observed a prominent blue and yellow emission pertaining to Dy3+ ions at 0.5 mol % under the excitation of 385 nm doped glasses. However, the photoluminescence intensities were remarkably enhanced by co-doping with Ce3+ ions to Dy3+: LBZ glasses due to energy transfer from Ce3+ to Dy3+. The emission spectra of co-doped (Ce3+/Dy3+): LBZ glass exhibits three strong emissions at 440 nm, 480 nm and 574 nm which are assigned with corresponding electronic transitions of 4I15/2 → 6H15/2, 4F9/2 → 6H15/2 and 4F9/2 → 6H13/2 respectively. The Commission International de E'clairage coordinates were calculated from their emission spectra of single doped Dy3+ and co-doped (Ce3+/Dy3+): LBZ glasses. The obtained CIE chromaticity coordinates for optimized co-doped glass are found to be very close to the standard white region. Based on the concentration of Ce3+, the emitting color of the co-doped glass can be changed from blue to white color. The transformation of the color from blue to white region due to energy transfer from Ce3+ to Dy3+. The energy transfer mechanism was substantiated by various fluorescence dynamics such as overlapped spectral profiles, photoluminescence, lifetime decay and CIE color coordinate analysis. These results could be suggested that the obtained co-doped (Ce3+/Dy3+): LBZ glasses are promising candidates for commercial white light applications.

Enhancement of the Ultraviolet Photoresponsivity of Al-doped ZnO Thin Films Prepared by using the Sol-gel Spin-coating Method

NASA Astrophysics Data System (ADS)

Lee, Wookbin; Leem, Jae-Young

2018-03-01

We report the structural, morphological, optical, and ultraviolet (UV) photoresponse properties of Al-doped ZnO (AZO) thin films prepared on silicon substrates with different Al doping concentrations by using the sol-gel spin-coating method. An analysis of the X-ray diffraction patterns of the AZO thin films revealed that the average grain size decreased and the c-axis lattice constant increased with Al content. The field-emission scanning electron microscopy images showed that with Al doping, the grain size decreased, but the film density increased with increasing Al doping concentration from 0% to 3%. These results indicate that the surface area of the film increased with increasing Al doping. The absorbance spectra revealed that the UV absorbance of the AZO thin films increased with increasing Al doping concentration and that the absorption onset shifted towards lower energies. The photoluminescence spectra revealed that with increasing Al doping, the intensity of the visible emission greatly decreased and the visible emission peak shifted forward lower energy (a red shift). The UV sensor based on the AZO thin films exhibited a higher responsivity than that based on the undoped ZnO thin film. Therefore, this study provides a facile method for improving the photoresponsivity of UV sensors.

A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO

NASA Astrophysics Data System (ADS)

Saniz, R.; Xu, Y.; Matsubara, M.; Amini, M. N.; Dixit, H.; Lamoen, D.; Partoens, B.

2013-01-01

The calculation of defect levels in semiconductors within a density functional theory approach suffers greatly from the band gap problem. We propose a band gap correction scheme that is based on the separation of energy differences in electron addition and relaxation energies. We show that it can predict defect levels with a reasonable accuracy, particularly in the case of defects with conduction band character, and yet is simple and computationally economical. We apply this method to ZnO doped with group III elements (Al, Ga, In). As expected from experiment, the results indicate that Zn substitutional doping is preferred over interstitial doping in Al, Ga, and In-doped ZnO, under both zinc-rich and oxygen-rich conditions. Further, all three dopants act as shallow donors, with the +1 charge state having the most advantageous formation energy. Also, doping effects on the electronic structure of ZnO are sufficiently mild so as to affect little the fundamental band gap and lowest conduction bands dispersion, which secures their n-type transparent conducting behavior. A comparison with the extrapolation method based on LDA+U calculations and with the Heyd-Scuseria-Ernzerhof hybrid functional (HSE) shows the reliability of the proposed scheme in predicting the thermodynamic transition levels in shallow donor systems.

The structural and optical properties of Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films from the first principles calculations

NASA Astrophysics Data System (ADS)

Zhang, Wenshu; Hu, Huijun; Zhang, Caili; Li, Jianguo; Li, Yuping; Ling, Lixia; Han, Peide

2017-12-01

Based on the density functional theory, the structural stability and optical properties of undoped and Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films are investigated. The good stability of the films based on the ZnO (0 0 0 1) can be obtained when the layer is larger than 12. Moreover, the dielectric function, refractive index, absorption, and reflectivity of doped ZnO nano thin films have been analyzed in detail. In the visible light range, the values of ZnO films from 12 to 24 layers are all smaller than those of the bulk. And with the augment of the layers, the values keep increasing. All the results signify that the nano film of 12 layers possesses the lowest reflectivity and weakest absorption. In addition, there is an evident impact of some doped element on the properties of nano films. The absorption and reflectivity of Ti, Si-doped ZnO nano thin films are higher than those of the clean films, while Al, B-doped are lower, especially B-doped. Moreover, the conductivity of the doped structure is better than that of the bulk. Thus, the B-doped ZnO nano thin films could be potential candidate materials of transparent conductive films.

Cd1-xZnxTe photodetectors with transparent conductive ZnO contacts

NASA Astrophysics Data System (ADS)

Tang, Ke; Huang, Jian; Lu, Yuanxi; Hu, Yan; Shen, Yibin; Zhang, Jijun; Gu, Qingmiao; Wang, Linjun; Lu, Yicheng

2018-03-01

High quality Cd1-xZnxTe (CZT) films were prepared using the close-spaced sublimation (CSS) technique. CZT film UV (ultraviolet) photodetectors were fabricated with B and Ga co-doped ZnO (BGZO) transparent conductive interdigitated contacts. The contact properties of BGZO/CZT were investigated by the transmission line model (TLM). The results indicate that a good ohmic contact is formed between BGZO and CZT with a very low contact resistivity of about 0.26 Ω·cm2. Compared with CZT photodetectors with Au contacts, the detectors with BGZO contacts show a higher value of UV photo response.

Amine-Functionalized Al-MOF#@ yxSm2O3-ZnO: A Visible Light-Driven Nanocomposite with Excellent Photocatalytic Activity for the Photo-Degradation of Amoxicillin.

PubMed

Abazari, Reza; Mahjoub, Ali Reza

2018-03-05

A visible light-driven amine-functionalized Al-based MOF # @ y x Sm 2 O 3 -ZnO nanocomposite (NH 2 -MOF # @ y x Sm 2 O 3 -ZnO NCP) was synthesized as an effective photocatalyst for AMX degradation in the presence of ultrasound, in which # is MOF synthesis conditions from MOF I to MOF XII and x and y stand for the weight percentages of Sm 2 O 3 -to-ZnO and Sm 2 O 3 -ZnO-to-MOF, respectively. The β-lactam antibiotic AMX, which is widely used for treating Gram-positive and Gram-negative bacterial infections in both animals and humans, was employed as a model pollutant. Using different detection techniques, the synthesized materials were characterized. Furthermore, effects of different synthesis methods, ultrasonic time, precursor concentration, sonication amplitude, and modulators on the MOFs photocatalytic behavior were taken into account. Also, catalytic dose and recycling, H 2 O 2 usage, and operating pH effects were investigated. Compared to the pure forms of NH 2 -MOF-53(Al) and Sm 2 O 3 -ZnO, the NCPs having the optimal Sm 2 O 3 -ZnO and NH 2 -MOF-53(Al) contents highly influenced the photocatalytic activity due to the synergetic impacts of the high charge mobility and the red shift in the NH 2 -MOF@Sm 2 O 3 -ZnO NCPs absorption edge compared to the Sm 2 O 3 -ZnO nanoflowers. We used a TOC analyzer, UV/vis spectroscopy, and HPLC chromatogram to estimate the rate of AMX elimination in water over NH 2 -MOF XII @ 30 7 Sm 2 O 3 -ZnO NCPs as our optimal sample. In addition, after the AMX pollutant degradation, the NH 2 -MOF@Sm 2 O 3 -ZnO NCPs were structurally stable and maintained the majority of their photocatalytic properties even after five runs of recycling process The NH 2 -MOF XII @ 30 7 Sm 2 O 3 -ZnO NCPs as the superior photocatalysts were more examined and a mechanism for the AMX degradation was suggested. As a suggestion, our obtained results can be used as a starting point for the preparation of the other heterogeneous MOF-based NCPs combined with the Sm

Spectroscopy and visible frequency upconversion in Er3+-Yb3+: TeO2-ZnO glass.

PubMed

Mohanty, Deepak Kumar; Rai, Vineet Kumar

2014-01-01

The UV-Vis-NIR absorption studies of the Er(3+)/Er(3+)-Yb(3+) doped/codoped TeO2-ZnO (TZO) glasses fabricated by the melting and quenching method has been performed. The spectroscopic radiative parameters viz. radiative transition probabilities, branching ratios and lifetimes have been determined from the absorption spectrum by using Judd-Ofelt theory. The near infrared (NIR) to visible frequency upconversion (UC) have been monitored by using an excitation of 976 nm wavelength radiation from a CW diode laser. The effect of codoping with Yb(3+) ions on the intensity of the UC emission bands from the Er(3+) ions throughout visible region has been studied. The mechanism responsible for the observed upconversion emissions in the prepared samples have been explained on the basis of excited state absorption and efficient energy transfer processes. Copyright © 2013 Elsevier B.V. All rights reserved.

Spectroscopic properties and energy transfer of Tm(3+)/Ho(3+)-codoped TeO(2)-WO(3)-ZnO glasses for 1.47mum amplifier.

PubMed

Chen, Ganxin; Zhang, Qinyuan; Cheng, Yun; Zhao, Chun; Qian, Qi; Yang, Zhongmin; Jiang, Zhonghong

2009-05-01

We report on spectroscopic properties and energy transfer of Tm(3+)/Ho(3+)-codoped tungsten tellurite glasses for 1.47microm amplifier. Fluorescence spectra and the analysis of energy transfer indicate that Ho(3+) is an excellent codopant for 1.47microm emission. Comparing with other tellurite glasses, the radiative lifetime of the (3)H(4) level of Tm(3+) in tungsten tellurite glass is slightly lower, but the spontaneous emission probability, stimulated emission cross-section and the figure of merit for bandwidth are obviously larger. Although the pump efficiency of tungsten tellurite amplifier is approximately 50% less than that of fluoride glass, the figure of merit for bandwidth is approximately three times larger in tungsten tellurite glass than in fluoride glass. The results indicate that Tm(3+)/Ho(3+)-codoped tungsten tellurite glass is attractive for broadband amplifier.

A new photoluminescence emission peak of ZnO SiO2 nanocomposites and its energy transfer to Eu3+ ions

NASA Astrophysics Data System (ADS)

Hong, Jian-He; Cong, Chang-Jie; Zhang, Zhi-Guo; Zhang, Ke-Li

2007-07-01

This work reports a new photoluminescence (PL) emission peak at about 402 nm from amorphous ZnO nanoparticles in a silica matrix, and the energy transfer from it to Eu3+ ions. The amorphous ZnO SiO2 nanocomposites were prepared by the sol gel method, which is verified by X-ray diffraction (XRD) profiles and FT IR spectra. The luminescence emission spectra are fitted by four Gauss profiles, two of which at longer wavelength are due to the defects of the material and the others to amorphous ZnO nanoparticles and the Zn O Si interface state. With the reduction of Zn/Si ratio and diethanolamine, the relative intensities of visible emission decrease. The weak visible emission is due to the reduction of defects after calcined at high temperature. The new energy state at the Zn O Si interface results in strong emission at about 402 nm. When Eu3+ ions are co-doped, weak energy transfer from ZnO SiO2 nanocomposites to Eu3+ emission are observed in the excitation spectra.

Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

NASA Astrophysics Data System (ADS)

Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

2016-12-01

We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

Sequential PLD in oxygen/argon gas mixture of Al-doped ZnO thin films with improved electrical and optical properties

NASA Astrophysics Data System (ADS)

Coman, Tudor; Timpu, Daniel; Nica, Valentin; Vitelaru, Catalin; Rambu, Alicia Petronela; Stoian, George; Olaru, Mihaela; Ursu, Cristian

2017-10-01

Highly conductive transparent Al-doped ZnO (AZO) thin films were obtained at room temperature through sequential PLD (SPLD) from Zn and Al metallic targets in an oxygen/argon gas mixture. We have investigated the structural, electrical and optical properties as a function of the oxygen/argon pressure ratio in the chamber. The measured Hall carrier concentration was found to increase with argon injection from 1.3 × 1020 to 6.7 × 1020 cm-3, while the laser shots ratio for Al/Zn targets ablation was kept constant. This increase was attributed to an enhancement of the substitution doping into the ZnO lattice. The argon injection also leads to an increase of the Hall mobility up to 20 cm2 V-1 s-1, attributed to a reduction of interstitial-type defects. Thus, the approach of using an oxygen/argon gas mixture during SPLD from metallic targets allows obtaining at room temperature AZO samples with high optical transmittance (about 90%) and low electrical resistivity (down to 5.1 × 10-4 Ω cm).

Fabrication of Vertical Organic Light-Emitting Transistor Using ZnO Thin Film

NASA Astrophysics Data System (ADS)

Yamauchi, Hiroshi; Iizuka, Masaaki; Kudo, Kazuhiro

2007-04-01

Organic light-emitting diodes (OLEDs) combined with thin film transistor (TFT) are well suitable elements for low-cost, large-area active matrix displays. On the other hand, zinc oxide (ZnO) is a transparent material and its electrical conductivity is controlled from conductive to insulating by growth conditions. The drain current of ZnO FET is 180 μA. The OLED uses ZnO thin film (Al-doped) for the electron injection layer and is controlled by radio frequency (rf) and direct current (dc) sputtering conditions, such as Al concentration and gas pressure. Al concentration in the ZnO film and deposition rate have strong effects on electron injection. Furthermore, the OLED driven by ZnO FET shows a luminance of 13 cd/m2, a luminance efficiency of 0.7 cd/A, and an on-off ratio of 650.

Ferromagnetism in doped or undoped spintronics nanomaterials

NASA Astrophysics Data System (ADS)

Qiang, You

2010-10-01

Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

2018-01-01

Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

Doping induced modifications in the electronic structure and magnetism of ZnO films: Valence band and conduction band studies

NASA Astrophysics Data System (ADS)

Katba, Savan; Jethva, Sadaf; Udeshi, Malay; Trivedi, Priyanka; Vagadia, Megha; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.; Kuberkar, D. G.

2017-11-01

The electronic structure of Pulsed Laser Deposited (PLD) ZnO, Zn0.95Fe0.05O (ZFO), Zn0.98Al0.02O (ZAO) and Zn0.93Fe0.05Al0.02O (ZFAO) films were investigated by Photoelectron spectroscopy and X-ray absorption spectroscopy. X-ray diffraction and ϕ-scan measurements show epitaxial c-directional growth of the films. Temperature dependent magnetization and M-H loop measurements show the presence of room temperature magnetic ordering in all the films. Fittings of Fe 2p XPS and Fe L3,2 -edge XAS of ZFO and ZFAO films show the presence of Fe, in both, Fe+2 and Fe+3 states in tetrahedral symmetry. Valence band spectra in resonance mode show resonance photon energy at 56 eV showing the presence of Fe2+ state (∼2 eV) near the Fermi level. A significant effect of Fe and Al doping on the spectral shape of O K-edge XAS was observed. Results of the Spectroscopic studies reveal that, ferromagnetism in the films is due to the contribution of oxygen deficiency which increases the number of charge carriers that take part in the exchange interaction. Al co-doping with Fe (in ZFAO) results in the enhancement of saturation magnetization by increase in the carrier-mediated ferromagnetic exchange interaction.

Significantly enhanced UV luminescence by plasmonic metal on ZnO nanorods patterned by screen-printing.

PubMed

Zhao, Jun; Cui, Shuyuan; Zhang, Xingang; Li, Wenqing

2018-08-31

A smart synthetic method is conceived to construct large batches of ZnO nanostructures to meet market demand for light-emitting diodes. Utilizing the localized surface plasmon resonance of metal nanoparticles (NPs) facilitates the recombination of electron-hole pairs and the release of photons. Compared to raw ZnO nanorods (NRs), ZnO NRs@HfO 2 @Al NPs show a ∼120× enhancement in ultraviolet (UV) photoluminescence (PL), while ZnO NRs@HfO 2 @Ag NPs show a six-fold enhancement. Because the surface plasmon energy of Al is nearer the ZnO band gap, the PL enhancement of ZnO NRs covered with Al is stronger than that of those covered with Ag. Based on this analysis, three-dimensional graphical ZnO NR arrays were manufactured by screen-printing, a mass production technique. After covering the arrays with layers of HfO 2 and Al NPs, the UV PL intensities of the corresponding substrates were increased by approximately 16×. This indicates the potential to mass-produce highly efficient optoelectronic devices.

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Mele, P.; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

2013-06-01

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300 °C-600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10-3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Improving p-type doping efficiency in Al{sub 0.83}Ga{sub 0.17}N alloy substituted by nanoscale (AlN){sub 5}/(GaN){sub 1} superlattice with Mg{sub Ga}-O{sub N} δ-codoping: Role of O-atom in GaN monolayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Hong-xia; Shi, Jun-jie, E-mail: jjshi@pku.edu.cn; Jiang, Xin-he

2015-01-15

We calculate Mg-acceptor activation energy E{sub A} and investigate the influence of O-atom, occupied the Mg nearest-neighbor, on E{sub A} in nanoscale (AlN){sub 5}/(GaN){sub 1} superlattice (SL), a substitution for Al{sub 0.83}Ga{sub 0.17}N disorder alloy, using first-principles calculations. We find that the N-atom bonded with Ga-atom is more easily substituted by O-atom and nMg{sub Ga}-O{sub N} (n = 1-3) complexes are favorable and stable in the SL. The O-atom plays a dominant role in reducing E{sub A}. The shorter the Mg-O bond is, the smaller the E{sub A} is. The Mg-acceptor activation energy can be reduced significantly by nMg{sub Ga}-O{submore » N} δ-codoping. Our calculated E{sub A} for 2Mg{sub Ga}-O{sub N} is 0.21 eV, and can be further reduced to 0.13 eV for 3Mg{sub Ga}-O{sub N}, which results in a high hole concentration in the order of 10{sup 20} cm{sup −3} at room temperature in (AlN){sub 5}/(GaN){sub 1} SL. Our results prove that nMg{sub Ga}-O{sub N} (n = 2,3) δ-codoping in AlN/GaN SL with ultrathin GaN-layer is an effective way to improve p-type doping efficiency in Al-rich AlGaN.« less

In situ codoping of a CuO absorber layer with aluminum and titanium: the impact of codoping and interface engineering on the performance of a CuO-based heterojunction solar cell

NASA Astrophysics Data System (ADS)

Masudy-Panah, Saeid; Radhakrishnan, K.; Ru, Tan Hui; Yi, Ren; Wong, Ten It; Dalapati, Goutam Kumar

2016-09-01

Aluminum-doped cupric oxide (CuO:Al) was prepared via an out-diffusion process of Al from an Al-coated substrate into the deposited CuO thin film upon thermal treatment. The effect of the annealing temperature on the structural and optical properties of CuO:Al was investigated in detail. The influence of Al incorporation on the photovoltaic properties was then investigated by preparing a p-CuO:Al/n-Si heterojunction solar cell. A significant improvement in the performance of the solar cell was achieved by controlling the out-diffusion of Al. A novel in situ method to co-dope CuO with Al and titanium (Ti) has been proposed to demonstrate CuO-based solar cells with the front surface field (FSF) design. The FSF design was created by depositing a CuO:Al layer followed by a Ti-doped CuO (CuO:Ti) layer. This is the first successful experimental demonstration of the codoping of a CuO thin film and CuO thin film solar cells with the FSF design. The open circuit voltage (V oc), short circuit current density (J sc) and fill factor (FF) of the fabricated solar cells were significantly higher for the FSF device compared to devices without FSF. The FF of this device improved by 68% through the FSF design and a record efficiency ɳ of 2% was achieved. The improvement of the solar cell properties is mainly attributed to the reduction of surface recombination, which influences the charge carrier collection.

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells.

PubMed

Akhtar, Mohd Javed; Alhadlaq, Hisham A; Alshamsan, Aws; Majeed Khan, M A; Ahamed, Maqusood

2015-09-08

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of Al(x)Zn(1-x)O nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 &caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

Effect of aluminium doping on structural and optical properties of ZnO thin films by sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayaprasath, G.; Murugan, R.; Ravi, G., E-mail: raviganesa@rediffmail.com, E-mail: gravicrc@gmail.com

2015-06-24

We systematically investigated the structural, morphological and optical properties of 0.05 mol % Al doped ZnO (Al:ZnO) thin films deposited on glass substrates by sol-gel spin coating method. The influences of Al doping in ZnO thin films are characterized by Powder X-ray diffraction study. ZnO and Al:ZnO thin films have showed hexagonal wurtzite structure without any secondary phase in c-axis (002) orientation. The SEM images also proved the hexagonal rod like morphologies for both films. All the films exhibited transmittance of 70-80% in the visible range up to 800 nm and cut-off wavelength observed at ∼390 nm corresponding to the fundamental absorption ofmore » ZnO. The band gap of the ZnO thin films slightly widened with the Al doping. The photoluminescence properties have been studied for Al: ZnO thin films and the results are presented in detail.« less

Study of upconversion fluorescence property of novel Er3+/Yb3+ co-doped tellurite glasses.

PubMed

Xu, Tie-Feng; Li, Guang-Po; Nie, Qiu-Hua; Shen, Xiang

2006-06-01

Er3+/Yb3+ co-doped TeO2-B2O3-Nb2O5-ZnO (TBN) glasses were prepared. The absorption spectra and upconversion luminescence spectra of TBN glasses were measured and analyzed. The upconversion emission bands centered at 530, 546 and 658 nm were observed under the excitation at 975 nm, corresponding to the transitions of 2H11/2-->4I15/2, 4S3/2-->4I15/2 and 4F9/2-->4I15/2 respectively. The ratio of red emission to green emission increases with an increasing of Yb3+ ions concentration. According to the quadratic dependence on excitation power, the possible upconversion mechanisms and processes were discussed.

Local Structures Around Co Atoms in Wurtzite ZnO Nano-Composites Probed by Fluorescence XAFS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi Tongfei; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029; Liu Wenhan

2007-02-02

The local structures around Co ions in the Zn1-xCoxO nano-composites prepared by the sol-gel method have been investigated by fluorescence X-ray absorption fine structure (XAFS) technique. The results indicate that for dilute Co-doped ZnO (x=0.02, 0.05), the Co2+ ions are incorporated into the ZnO lattice, and are located at the position of the substitutional Zn2+ ions. As the Co content increases to 0.10 or higher, only part of the Co ions enter the lattice of the wurtzite and the others exist in the form of a Co3O4 phase whose content increases with the doped Co concentration. In the substitutional Zn0.98Co0.02Omore » sample, the bond length of the first shell RCo-O and the second shell RCo-Zn is smaller than the second shell Zn-Zn distance in ZnO by about 0.01{approx}0.02 A. These results imply that only small local lattice deformation is induced by dilute Co2+ substituting into the Zn2+ sites.« less

Influences of Co doping on the structural and optical properties of ZnO nanostructured

NASA Astrophysics Data System (ADS)

Majeed Khan, M. A.; Wasi Khan, M.; Alhoshan, Mansour; Alsalhi, M. S.; Aldwayyan, A. S.

2010-07-01

Pure and Co-doped ZnO nanostructured samples have been synthesized by a chemical route. We have studied the structural and optical properties of the samples by using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), field-emission transmission electron microscope (FETEM), energy-dispersive X-ray (EDX) analysis and UV-VIS spectroscopy. The XRD patterns show that all the samples are hexagonal wurtzite structures. Changes in crystallite size due to mechanical activation were also determined from X-ray measurements. These results were correlated with changes in particle size followed by SEM and TEM. The average crystallite sizes obtained from XRD were between 20 to 25 nm. The TEM images showed the average particle size of undoped ZnO nanostructure was about 20 nm whereas the smallest average grain size at 3% Co was about 15 nm. Optical parameters such as absorption coefficient ( α), energy band gap ( E g ), the refractive index ( n), and dielectric constants ( σ) have been determined using different methods.

Nonlinear absorption properties of ZnO and Al doped ZnO thin films under continuous and pulsed modes of operations

NASA Astrophysics Data System (ADS)

Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

2018-06-01

In the present investigation, we present the variations in nonlinear optical (NLO) properties of undoped and Al doped ZnO (AZO) films under two different off-resonant regimes using continuous and pulsed mode lasers. Z-scan open aperture experiment is performed to quantify nonlinear absorption constant and imaginary component of third order susceptibility. Reverse saturable absorption (RSA) and saturable absorption (SA) behaviors are noticed in both undoped and AZO films under pulsed mode and continuous wavelength (CW) regime respectively. The RSA and SA behavior observed in the films are attributed to two photon absorption (TPA) and thermal lensing properties respectively. The thermal lensing is assisted by the thermo-optic effects within the films due to the continuous illumination of the laser.

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

PubMed Central

Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M.A.; Ahamed, Maqusood

2015-01-01

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33–55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved. PMID:26347142

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

NASA Astrophysics Data System (ADS)

Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

2015-09-01

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

Percentage of different aluminum doping influence the morphological and optical properties of ZnO nanostructured growth for sensor application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohamed, R., E-mail: ruziana12@gmail.com; NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor; Faculty of Applied Sciences, Universiti Teknologi MARA Pahang, 26400 Bandar Tun Razak Jengka, Pahang

In this work, Zinc Oxide (ZnO) with different aluminum (Al) doping percentage was synthesis by sol gel immersion method. Al doped ZnO at various doping percentage from 1, 2, 3, 4 and 5. It was found that with different Al percentage influence the morphological and optical properties of ZnO growth. Field Emission Scanning Electron Microscope (FESEM) image showed the use of different Al doping causes the difference in geometry and size of ZnO nanorods growth. Based on UV-Vis spectroscopy, the transmittance at 1% Al doping has the highest spectrum.

Vacuum-annealing induced enhancements in the transparent conducting properties of Mo  +  F doped ZnO thin films

NASA Astrophysics Data System (ADS)

Dineshbabu, N.; Ravichandran, K.

2017-09-01

The decisive aim of the present study is to enhance the transparent conducting properties of Mo  +  F co-doped ZnO films through annealing. In this work, Mo  +  F co-doped ZnO (MFZO) films were deposited on glass substrates at a deposition temperature of 350 °C using a home-made nebulizer spray pyrolysis technique and the prepared samples were annealed under air and vacuum atmosphere at 400 °C for 2 h. The structural, electrical, optical, surface morphological and elemental properties of as-deposited, air-annealed and vacuum-annealed samples were compared using various analytical techniques. The vacuum-annealed sample shows lowest resistivity of 1.364  ×  10-3 Ω cm and high transmittance of 90% in the visible region with high ohmic conducting nature. The optical bandgap of the sample was found to be increased to 3.36 eV after vacuum annealing treatment. The XRD patterns of the films confirmed the polycrystalline nature. The PL measurements show the defect levels of the deposited films. The FESEM and AFM studies show an increase in the grain size and roughness of the films, respectively, after vacuum-annealing treatment. The presence of the elements before and after annealing treatment was confirmed using XPS analysis.

Flux pinning mechanism in codoped-MgB2 with Al2O3 and SiC

NASA Astrophysics Data System (ADS)

Kiafiroozkoohi, Narjess Sadat; Ghorbani, Shaban Reza; Arabi, Hadi

2018-05-01

MgB2 superconductor samples, co-doped with 0.02 wt of Al2O3 and 0.02 wt SiC, have been examined by M-H loop measurements and calculation of the critical current density based on the Bean model. Normalized volume pinning force, f = F/Fmax, as a function of the reduced magnetic field, h = H/Hmax has been obtained at each temperature. Hughochi flux pinning model, which was included the normal point pinning, the normal surface pinning, and the pinning based on spatial variation in the Ginzburg-Landau parameter, was used to study the flux pinning mechanisms. It was found that the Δκ effect and the normal point pinning mechanisms play the main role in the flux pinning at the magnetic field lower than Hmax and the contribution of the Δκ mechanism increases with the increasing temperature, while the contribution of normal point pinning mechanism decreases. At magnetic field larger than Hmax, the only mechanism that acts as the flux pinning was the normal surface pinning mechanism.

Scintillator Design Via Codoping

NASA Astrophysics Data System (ADS)

Melcher, C. L.; Koschan, M.; Zhuravleva, M.; Wu, Y.; Rothfuss, H.; Meng, F.; Tyagi, M.; Donnald, S.; Yang, K.; Hayward, J. P.; Eriksson, L.

Scintillation materials that lack intrinsic luminescence centers must be doped with optically active ions in order to provide luminescent centers that radiatively de-excite as the final step of the scintillation process. Codoping, on the other hand, can be defined as the incorporation of additional specific impurity species usually for the purpose of modifying the scintillation properties, mechanical properties, or the crystal growth behavior. In recent years codoping has become an increasingly popular approach for engineering scintillators with optimal performance for targeted applications. This report reviews several successful examples and its effect on specific properties.

Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

PubMed Central

Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

2016-01-01

Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

NASA Astrophysics Data System (ADS)

Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

2016-12-01

Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400-900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.

Thermally induced growth of ZnO nanocrystals on mixed metal oxide surfaces.

PubMed

Inayat, Alexandra; Makky, Ayman; Giraldo, Jose; Kuhnt, Andreas; Busse, Corinna; Schwieger, Wilhelm

2014-06-23

An in situ method for the growth of ZnO nanocrystals on Zn/Al mixed metal oxide (MMO) surfaces is presented. The key to this method is the thermal treatment of Zn/Al layered double hydroxides (Zn/Al LDHs) in the presence of nitrate anions, which results in partial demixing of the LDH/MMO structure and the subsequent crystallization of ZnO crystals on the surface of the forming MMO layers. In a first experimental series, thermal treatment of Zn/Al LDHs with different fractions of nitrate and carbonate in the interlayer space was examined by thermogravimetry coupled with mass spectrometry (TG-MS) and in situ XRD. In a second experimental series, Zn/Al LDHs with only carbonate in the interlayer space were thermally treated in the presence of different amounts of an external nitrate source (NH4NO3). All obtained Zn/Al MMO samples were analysed by electron microscopy, nitrogen physisorption and powder X-ray diffraction. The gas phase formed during nitrate decomposition turned out to be responsible for the formation of crystalline ZnO nanoparticles. Accordingly, both interlayer nitrate and the presence of ammonium nitrate led to the formation of supported ZnO nanocrystals with mean diameters between 100 and 400 nm, and both methods offer the possibility to tailor the amount and size of the ZnO crystals by means of the amount of nitrate. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Specifications of ZnO growth for heterostructure solar cell and PC1D based simulations

PubMed Central

Hussain, Babar; Ebong, Abasifreke

2015-01-01

This data article is related to our recently published article (Hussain et al., in press [1]) where we have proposed a new solar cell model based on n-ZnO as front layer and p-Si as rear region. The ZnO layer will act as an active n-layer as well as antireflection (AR) coating saving considerable processing cost. There are several reports presenting use of ZnO as window/antireflection coating in solar cells (Mansoor et al., 2015; Haq et al., 2014; Hussain et al., 2014; Matsui et al., 2014; Ding et al., 2014 [2], [3], [4], [5], [6]) but, here, we provide data specifically related to simultaneous use of ZnO as n-layer and AR coating. Apart from the information we already published, we provide additional data related to growth of ZnO (with and without Ga incorporation) layers using MOCVD. The data related to PC1D based simulation of internal and external quantum efficiencies with and without antireflection effects of ZnO as well as the effects of doping level in p-Si on current–voltage characteristics have been provided. PMID:26587557

Growth and luminescent properties of Yb:YAG and Ca co-doped Yb:YAG ultrafast scintillation crystals

NASA Astrophysics Data System (ADS)

Zhu, Maodong; Qi, Hongji; Pan, Mingyan; Hou, Qing; Jiang, Benxue; Jin, Yaxue; Han, Hetong; Song, Zhaohui; Zhang, Hui

2018-05-01

In this work, Yb-doped Y3Al5O12 [yttrium aluminum garnet (YAG)] crystals and Ca co-doped Yb:YAG crystals were grown by the Czochralski (CZ) method. The chemical formulas of the two crystals are (Yb0.1Y0.9)3Al5O12 and (Ca0.001Yb0.1Y0.899)3Al5O12, respectively. The structural, optical and luminescent properties of the Yb:YAG and Ca, Yb:YAG crystals were investigated by X-ray rocking curve, X-ray diffraction, Raman spectra, UV-Visble-NIR absorption spectra and X-ray fluorescence. X-ray fluorescence spectrum with two emission peaks at 330 nm and 490 nm were observed in the two kinds of crystals, which would increase slightly after the annealing. Comparing to the Yb:YAG crystal, Ca co-doped Yb:YAG crystal behaved the better luminescent intensity without changing the crystal structure and vibrational modes. This indicates that by doping Ca2+ in Yb:YAG crystal may be an appropriate way to enhance the luminescent property of the scintillation crystal.

Synthesis of ZnO nanorods and observation of resistive switching memory in ZnO based polymer nanocomposites

NASA Astrophysics Data System (ADS)

Nair, Manjula G.; Malakar, Meenakshi; Mohapatra, Saumya R.; Chowdhury, Avijit

2018-05-01

This research reports the observation of bipolar resistive switching memory in ZnO nanorod based polymer nanocomposites. We synthesized ZnO nanorods by wet-chemical method and characterized them using XRD, UV-VIS spectroscopy and SEM. The synthesized materials have hexagonal ZnO phase with grain size of 24 nm and having strong orientation along (101) direction as observed from XRD. The SEM micrograph confirms the formation of ZnO nanorods with diameter in the range of 10 to 20 nm and length of the order of 1 µm. From optical absorption spectra the band gap is estimated to be 2.42 eV. ZnO nanorods were dispersed in PVDF-HFP polymer matrix to prepare the nanocomposite. This nanocomposite was used as active layer in the devices having sandwich structure of ITO/PVDF-HFP+ZnO nanorods/Al. Bipolar non-volatile memory was observed with ON-OFF resistance ratio of the order of 103 and with a wide voltage window of 2.3V. The switching mechanism could be due to the trapping and de-trapping of electrons by the ZnO nanorods in the nanocomposite during ON and OFF states respectively.

Enhanced broadband near-infrared luminescence from transparent Yb3+/Ni2+ codoped silicate glass ceramics.

PubMed

Wu, Botao; Zhou, Shifeng; Ruan, Jian; Qiao, Yanbo; Chen, Danping; Zhu, Congshan; Qiu, Jianrong

2008-02-04

The near-infrared emission intensity of Ni(2+) in Yb(3+)/Ni(2+) codoped transparent MgO-Al(2)O(3)-Ga(2)O(3)-SiO(2)-TiO(2) glass ceramics could be enhanced up to 4.4 times via energy transfer from Yb(3+) to Ni(2+) in nanocrystals. The best Yb(2)O(3) concentration was about 1.00 mol%. For the Yb(3+)/Ni(2+) codoped glass ceramic with 1.00 mol% Yb(2)O(3), a broadband near-infrared emission centered at 1265 nm with full width at half maximum of about 300 nm and lifetime of about 220 mus was observed. The energy transfer mechanism was also discussed.

Cu-Doped ZnO Thin Films Grown by Co-deposition Using Pulsed Laser Deposition for ZnO and Radio Frequency Sputtering for Cu

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2018-05-01

Cu-doped ZnO (CZO) thin films were fabricated on single-crystalline (0001) Al2O3 substrates by co-deposition using pulsed laser deposition for ZnO and radio frequency sputtering for Cu. CZO thin films with 0-20% molar concentrations are obtained by adjusting the deposition rates of ZnO and Cu. The CZO thin films exhibit room temperature ferromagnetism, and CZO with 5% Cu molar concentration has maximum remanent magnetization, which is consistent with theoretical results.

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics.

PubMed

Alshammari, Fwzah H; Nayak, Pradipta K; Wang, Zhenwei; Alshareef, Husam N

2016-09-07

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm(2) V(-1) s(-1), but increased to 13.3 cm(2) V(-1) s(-1) using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance.

Luminescent properties and energy transfer of luminescent carbon dots assembled mesoporous Al(2)O(3): Eu(3) co-doped materials for temperature sensing.

PubMed

He, Youling; He, Jiangling; Zhang, Haoran; Liu, Yingliang; Lei, Bingfu

2017-06-15

Owning to the hydrogen-band interactions, blue-light-emitting luminescent carbon dots (CDs) synthesized by one-pot hydrothermal treatment were successfully assembled into Eu 3+ doped mesoporous aluminas (MAs). Interesting, dual-emissive CDs/MAs co-doped materials with higher quantum yield (QY), long-term stability, mesoporous structure, high thermal stability, and large surface areas were obtained. Furthermore, the obtained CDs/MAs co-doped materials possessed tunable color, and excellent temperature sensitivity due to the existing of energy transfer between CDs and Eu 3+ ion. The energy transfer efficiency (η) and energy transfer probability (P) for CDs/Eu 3+ co-doped materials possessed a monotonous tendency with the change of Eu 3+ content. More importantly, the dual-emissive colors can be regularly adjusted through regulating their excitation wavelength or relative mass ratio. In addition, the emission intensity of the CDs/MAs co-doped materials gradually decreased with increasing temperature showing the clear temperature dependence, this dual-emissive thermometer was with high sensitivity, owning a great fitted curve in the range from 100 to 360K under a single wavelength excitation. Copyright © 2017 Elsevier Inc. All rights reserved.

Comparative study for highly Al and Mg doped ZnO thin films elaborated by sol gel method for photovoltaic application

NASA Astrophysics Data System (ADS)

El Hallani, G.; Nasih, S.; Fazouan, N.; Liba, A.; Khuili, M.; Sajieddine, M.; Mabrouki, M.; Laanab, L.; Atmani, E. H.

2017-04-01

Transparent conducting oxides such as ZnO doped with Al or Mg are commonly used in solar cells, light emitting diodes, photodetectors, and ultraviolet laser diodes. In our work, we focus on a comparative study of the structural, optical, and electrical properties of ZnO films highly doped with Al (AZO) and Mg (MZO). These films are deposited on glass substrates by the sol-gel spin coating method. The doping concentrations for Al and Mg are fixed to 5%-30%. The XRD spectra indicate that all the samples are polycrystalline with hexagonal wurtzite structures, exhibiting a preferred orientation along the (002) plane. Low degradation in crystallinity was observed for MZO even at a Mg concentration of 30%. The MgO phase started to appear compared to Al-doped layers where smaller grains are formed inducing a deterioration in the films just after doping but no new phase appeared. This result is in agreement with other experimental results [J. K. Rath, Sol. Energy Mater. Sol. Cells 76, 431-487 (2003); Morris et al., J. Appl. Phys. 67, 1079-1087 (1990)]. By AFM analysis, the results indicate a significantly rough surface for MZO compared to AZO films. For equal Al and Mg dopant concentrations, we observe that the transmittance spectra of MZO thin films are wider than those of AZO, indicating a shift toward shorter wavelengths with an optical gap energy equal to 3.67 eV. The electrical measurements of AZO and MZO thin films were made using the I-V characteristic obtained by the four probe method. All the films present an ohmic behavior. The conductivity and the mobility of AZO films were found to be better than those of MZO.

Optical reflectance of solution processed quasi-superlattice ZnO and Al-doped ZnO (AZO) channel materials

NASA Astrophysics Data System (ADS)

Buckley, Darragh; McCormack, Robert; O'Dwyer, Colm

2017-04-01

The angle-resolved reflectance of high crystalline quality, c-axis oriented ZnO and AZO single and periodic quasi-superlattice (QSL) spin-coated TFT channels materials are presented. The data is analysed using an adapted model to accurately determine the spectral region for optical thickness and corresponding reflectance. The optical thickness agrees very well with measured thickness of 1-20 layered QSL thin films determined by transmission electron microscopy if the reflectance from lowest interference order is used. Directional reflectance for single layers or homogeneous QSLs of ZnO and AZO channel materials exhibit a consistent degree of anti-reflection characteristics from 30 to 60° (~10-12% reflection) for thickness ranging from ~40 nm to 500 nm. The reflectance of AZO single layer thin films is  <10% from 30 to 75° at 514.5 nm, and  <6% at 632.8 nm from 30-60°. The data show that ZnO and AZO with granular or periodic substructure behave optically as dispersive, continuous thin films of similar thickness, and angle-resolved spectral mapping provides a design rule for transparency or refractive index determination as a function of film thickness, substructure (dispersion) and viewing angle.

The thermodynamic activity of ZnO in silicate melts

NASA Astrophysics Data System (ADS)

Reyes, R. A.; Gaskell, D. R.

1983-12-01

The activity of ZnO in ZnO-SiO2 and CaO-ZnO-SiO2 melts has been measured at 1560 °C using a transpiration technique with CO-CO2 mixtures as the carrier gas. The activities of ZnO in dilute solution in 42 wt pct SiO2-38 wt pct CaO-20 wt pct A12O3 in the range 1400° to 1550 °C and in 62 wt pct SiO2-23.3 wt pct CaO-14.7 wt pct A12O3 at 1550 °C have also been measured. The measured free energies of formation of ZnO-SiO2 melts are significantly more negative than published estimated values and this, together with the behavior observed in the system CaO-Al2O3-SiO2, indicate that ZnO is a relatively basic oxide. The results are discussed in terms of the polymerization model of binary silicate melts and ideal silicate mixing in ternary silicate melts. The behavior of ZnO in dilute solution in CaO-Al2O3-SiO2 melts is discussed in terms of the possibility of the fluxing of ZnO by iron blast furnace slags.

Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

NASA Astrophysics Data System (ADS)

Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

2017-12-01

In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

2016-06-01

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

Single and combined effects of aluminum (Al2O3) and zinc (ZnO) oxide nanoparticles in a freshwater fish, Carassius auratus.

PubMed

Benavides, María; Fernández-Lodeiro, Javier; Coelho, Pedro; Lodeiro, Carlos; Diniz, Mário S

2016-12-01

The increasing use of nanoparticles (NPs) worldwide has raised some concerns about their impact on the environment. The aim of the study was to assess the toxicity of metal oxide nanoparticles, singly or combined, in a freshwater fish (Carassius auratus). The fish were exposed for 7, 14, and 21 days to different concentrations of NPs (10 μg Al 2 O 3 .L -1 , 10 μg ZnO.L -1 , 10 μg Al 2 O 3 .L -1 plus 10 μg ZnO.L -1 , 100 μg Al 2 O 3 .L -1 , 100 μg ZnO.L -1 , and 100 μg Al 2 O 3 .L -1 plus 100 μg ZnO.L -1 ). At the end of each exposure period, antioxidant enzyme activity (catalase, glutathione-S-transferase, and superoxide dismutase), lipid peroxidation, and histopathology were assessed in the gills and livers of C. auratus. The results show an increase in catalase (CAT) and superoxide dismutase (SOD) activity in the gills and livers of fish, especially after 14 days of exposure to single and combined NPs, followed by a reduction at 21 days. An increase in glutathione S-transferase (GST) was observed in gills after 7 days for all tested NP concentrations (single and combined); while in livers, a significant increase was determined after 14 days of exposure to 100 μg.L -1 of both single ZnO and Al 2 O 3 NPs. Lipid peroxidation (LPO) significantly increased in gills after 7 days of exposure to 100 μg.L -1 Al 2 O 3 NPs (single or combined). In livers, LPO increased significantly after 7 days of exposure to all tested concentrations of both single ZnO and Al 2 O 3 (except for 10 μg Al 2 O 3 .L -1 ), and after 14 days of exposure to ZnO (10 and 100 μg.L -1 ) and Al 2 O 3 (100 μg.L -1 ) . The results from histological observations suggest that exposure to metal oxide NPs affected both livers and gills, presenting alterations such as gill hyperplasia and liver degeneration. However, the most pronounced effects were found in gills. In general, this study shows that the tested NPs, single or combined, are capable of causing sub-lethal effects

Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, H. F.; Chua, S. J.; Hu, G. X.

2007-10-15

X-ray diffractions, Nomarski microscopy, scanning electron microscopy, and photoluminescence have been used to study the effects of substrate on the structure and orientation of ZnO thin films grown by rf-magnetron sputtering. GaAs(001), GaAs(111), Al{sub 2}O{sub 3}(0002) (c-plane), and Al{sub 2}O{sub 3}(1102) (r-plane) wafers have been selected as substrates in this study. X-ray diffractions reveal that the ZnO film grown on GaAs(001) substrate is purely textured with a high c-axis orientation while that grown on GaAs(111) substrate is a single ZnO(0002) crystal; a polycrystalline structure with a large-single-crystal area of ZnO(0002) is obtained on a c-plane Al{sub 2}O{sub 3} substrate whilemore » a ZnO(1120) single crystal is formed on an r-plane Al{sub 2}O{sub 3} substrate. There is absence of significant difference between the photoluminescence spectra collected from ZnO/GaAs(001), ZnO/GaAs(111), and ZnO/Al{sub 2}O{sub 3}(0002), while the photoluminescence from ZnO/Al{sub 2}O{sub 3}(1102) shows a reduced intensity together with an increased linewidth, which is, likely, due to the increased incorporation of native defects during the growth of ZnO(1120)« less

Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Li; Chen, Xinliang; Zhou, Zhongxin; Guo, Sheng; Zhao, Ying; Zhang, Xiaodan

2018-03-01

Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD) technique are investigated with various temperatures from 100 to 250 °C and different Zn : Al cycle ratios from 20 : 0 to 20 : 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn : Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10‑3 Ω·cm and high optical transmittance deposited at 150 °C with 20 : 2 Zn : Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707) and the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900).

Codoping characteristics of Zn with Mg in GaN

NASA Astrophysics Data System (ADS)

Kim, K. S.; Han, M. S.; Yang, G. M.; Youn, C. J.; Lee, H. J.; Cho, H. K.; Lee, J. Y.

2000-08-01

The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5×1017cm-3) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0×10-4 Ω cm2, which is one order of magnitude lower than that of Mg doped only GaN film (1.9×10-3 Ω cm2).

Luminescence and energy transfer in Lu3Al5O12 scintillators co-doped with Ce3+ and Tb3+.

PubMed

Ogiegło, Joanna M; Zych, Aleksander; Ivanovskikh, Konstantin V; Jüstel, Thomas; Ronda, Cees R; Meijerink, Andries

2012-08-23

Lu(3)Al(5)O(12) (LuAG) doped with Ce(3+) is a promising scintillator material with a high density and a fast response time. The light output under X-ray or γ-ray excitation is, however, well below the theoretical limit. In this paper the influence of codoping with Tb(3+) is investigated with the aim to increase the light output. High resolution spectra of singly doped LuAG (with Ce(3+) or Tb(3+)) are reported and provide insight into the energy level structure of the two ions in LuAG. For Ce(3+) zero-phonon lines and vibronic structure are observed for the two lowest energy 5d bands and the Stokes' shift (2 350 cm(-1)) and Huang-Rhys coupling parameter (S = 9) have been determined. Tb(3+) 4f-5d transitions to the high spin (HS) and low spin (LS) states are observed (including a zero-phonon line and vibrational structure for the high spin state). The HS-LS splitting of 5400 cm(-1) is smaller than usually observed and is explained by a reduction of the 5d-4f exchange coupling parameter J by covalency. Upon replacing the smaller Lu(3+) ion with the larger Tb(3+) ion, the crystal field splitting for the lowest 5d states increases, causing the lowest 5d state to shift below the (5)D(4) state of Tb(3+) and allowing for efficient energy transfer from Tb(3+) to Ce(3+) down to the lowest temperatures. Luminescence decay measurements confirm efficient energy transfer from Tb(3+) to Ce(3+) and provide a qualitative understanding of the energy transfer process. Co-doping with Tb(3+) does not result in the desired increase in light output, and an explanation based on electron trapping in defects is discussed.

Comparative cytotoxicity of Al2O3, CeO2, TiO2 and ZnO nanoparticles to human lung cells.

PubMed

Kim, In-Sun; Baek, Miri; Choi, Soo-Jin

2010-05-01

The increased applications of nanoparticles in a wide range of industrial fields raise the concern about their potential toxicity to human. The aim of this study was to assess and compare the toxicity of four different oxide nanoparticles (Al2O3, CeO2, TiO2 and ZnO) to human lung epithelial cells, A549 carcinoma cells and L-132 normal cells, in vitro. We focused on the toxicological effects of the present nanoparticles on cell proliferation, cell viability, membrane integrity and oxidative stress. The long-term cytotoxicity of nanoparticles was also evaluated by employing the clonogenic assay. Among four nanoparticles tested, ZnO exhibited the highest cytotoxicity in terms of cell proliferation, cell viability, membrane integrity and colony formation in both cell lines. Al2O3, CeO2 and TiO2 showed little adverse effects on cell proliferation and cell viability. However, TiO2 induced oxidative stress in a concentration- and time-dependent manner. CeO2 caused membrane damage and inhibited colony formation in long-term, but with different degree depending on cell lines. Al2O3 seems to be less toxic than the other nanoparticles even after long time exposure. These results highlight the need for caution during manufacturing process of nanomaterials as well as further investigation on the toxicity mechanism.

Photoluminescence properties of Mn2+/Yb3+ co-doped oxyfluoride glasses for solar cells application

NASA Astrophysics Data System (ADS)

Yan, Ying; Chen, Zeng; Jia, Xiyang; Li, Shengjun

2018-01-01

Mn2+/Yb3+ co-doped oxyfluoride glasses were facilely synthesized in the SiO2-Al2O3-Na2O-CaF2 system. Partial crystallization processed during the preparation of the glasses, by which small amounts of CaF2 nano-crystals were formed. Under ultraviolet and blue (370-500 nm) light excitation, an efficient down-conversion involving the emission of near-infrared is realized in the Mn2+/Yb3+ co-doped oxyfluoride glasses. The near-infrared emission peaks mainly at 976 nm and secondarily at 1020 nm, which is a comfortable match with the band gap of c-Si. The variation in visible and near-infrared spectra and the decay curves of Mn2+:4T1 → 6A1 emission have been investigated to verify the possible energy transfer from Mn2+ ions to Yb3+ ions. On analyzing the energy transfer processes theoretically and experimentally, we propose that quantum cutting and down-shifting processes may occur simultaneously in the samples. We suggest that the Mn2+-Yb3+ co-doped materials can provide a novel direction to realize UV-Vis to NIR down-conversion for Si solar cells.

Humidity sensing properties of Al-doped zinc oxide coating films

NASA Astrophysics Data System (ADS)

Saidi, S. A.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Yusoff, M. M.; Sin, N. D. Md.; Zoolfakar, A. S.; Khusaimi, Z.; Rusop, M.

2018-05-01

Humidity sensor was fabricated using Al-doped zinc oxide (ZnO) coating films through spin-coating at room temperature. The sensing mechanism was discussed based on their nanostructures, such as surface area and porous nanostructures. Surface area and water adsorption are an important component in the low humidity, while at high humidity, porous nanostructures and capillary condensation become important. The results showed that the sensitivity of the Al-doped ZnO coating improved compared to that of the Al-doped ZnO nanorod arrays, with values of 7.38 at 40% to 90%RH (Relative humidity). All these results indicated that Al-doped ZnO coating had high potential for humidity-sensor applications.

Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices

NASA Astrophysics Data System (ADS)

Li, Jinchai; Yang, Weihuang; Li, Shuping; Chen, Hangyang; Liu, Dayi; Kang, Junyong

2009-10-01

The internal electric field is modified by using Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices (SLs). The first-principles simulation results show that the internal electric field in SL has been significantly intensified due to the charge transferring from Si-doped interface to Mg-doped interface. Accordingly, the Mg- and Si-δ-codoped p-type Al0.2Ga0.8N/GaN SLs are grown by metalorganic vapor phase epitaxy and higher hole concentration as much as twice of that in modulation-doped SL has been achieved, as determined by Hall effect measurements. Furthermore, by applying Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN SLs with high Al content as the p-type layers, we have fabricated deep ultraviolet light emitting diodes with superior current-voltage characteristics by lowering Mg-acceptor activation energy.

Photocatalytic degradation of organic dyes by Er3+: YAlO3/Co- and Fe-doped ZnO coated composites under solar irradiation

NASA Astrophysics Data System (ADS)

Chen, Yang; Lu, Chunxiao; Tang, Liang; Song, Yahui; Wei, Shengnan; Rong, Yang; Zhang, Zhaohong; Wang, Jun

2016-12-01

In this work, the Er3+: YAlO3/Co- and Fe-doped ZnO coated composites were prepared by the sol-gel method. Then, they were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX). Photo-degradation of azo fuchsine (AF) as a model dye under solar light irradiation was studied to evaluate the photocatalytic activity of the Er3+: YAlO3/Co- and Fe-doped ZnO coated composites. It was found that the photocatalytic activity of Co- and Fe-doped ZnO composites can be obviously enhanced by upconversion luminescence agent (Er3+: YAlO3). Besides, the photocatalytic activity of Er3+: YAlO3/Fe-doped ZnO is better than that of Er3+: YAlO3/Co-doped ZnO. The influence of experiment conditions, such as the concentration of Er3+: YAlO3, heat-treatment temperature and time on the photocatalytic activity of the Er3+: YAlO3/Co- and Fe-doped ZnO coated composites was studied. In addition, the effects of solar light irradiation time, dye initial concentration, Er3+: YAlO3/Co- and Fe-doped ZnO amount on the photocatalytic degradation of azo fuchsine in aqueous solution were investigated in detail. Simultaneously, some other organic dyes, such as Methyl Orange (MO), Rhodamine B (RM-B), Acid Red B (AR-B), Congo Red (CR), and Methyl Blue (MB) were also studied. The possible excitation principle of Er3+: YAlO3/Co- and Fe-doped ZnO coated composites under solar light irradiation and the photocatalytic degradation mechanism of organic dyes were discussed.

Sn/Be Sequentially co-doped Hematite Photoanodes for Enhanced Photoelectrochemical Water Oxidation: Effect of Be2+ as co-dopant

PubMed Central

Annamalai, Alagappan; Lee, Hyun Hwi; Choi, Sun Hee; Lee, Su Yong; Gracia-Espino, Eduardo; Subramanian, Arunprabaharan; Park, Jaedeuk; Kong, Ki-jeong; Jang, Jum Suk

2016-01-01

For ex-situ co-doping methods, sintering at high temperatures enables rapid diffusion of Sn4+ and Be2+ dopants into hematite (α–Fe2O3) lattices, without altering the nanorod morphology or damaging their crystallinity. Sn/Be co-doping results in a remarkable enhancement in photocurrent (1.7 mA/cm2) compared to pristine α–Fe2O3 (0.7 mA/cm2), and Sn4+ mono-doped α-Fe2O3 photoanodes (1.0 mA/cm2). From first-principles calculations, we found that Sn4+ doping induced a shallow donor level below the conduction band minimum, which does not contribute to increase electrical conductivity and photocurrent because of its localized nature. Additionally, Sn4+-doping induce local micro-strain and a decreased Fe-O bond ordering. When Be2+ was co-doped with Sn4+-doped α–Fe2O3 photoanodes, the conduction band recovered its original state, without localized impurities peaks, also a reduction in micro-strain and increased Fe-O bond ordering is observed. Also the sequence in which the ex-situ co-doping is carried out is very crucial, as Be/Sn co-doping sequence induces many under-coordinated O atoms resulting in a higher micro-strain and lower charge separation efficiency resulting undesired electron recombination. Here, we perform a detailed systematic characterization using XRD, FESEM, XPS and comprehensive electrochemical and photoelectrochemical studies, along with sophisticated synchrotron diffraction studies and extended X-ray absorption fine structure. PMID:27005757

Tunable antireflection from conformal Al-doped ZnO films on nanofaceted Si templates

PubMed Central

2014-01-01

Photon harvesting by reducing reflection loss is the basis of photovoltaic devices. Here, we show the efficacy of Al-doped ZnO (AZO) overlayer on ion beam-synthesized nanofaceted silicon for suppressing reflection loss. In particular, we demonstrate thickness-dependent tunable antireflection (AR) from conformally grown AZO layer, showing a systematic shift in the reflection minima from ultraviolet to visible to near-infrared ranges with increasing thickness. Tunable AR property is understood in light of depth-dependent refractive index of nanofaceted silicon and AZO overlayer. This improved AR property significantly increases the fill factor of such textured heterostructures, which reaches its maximum for 60-nm AZO compared to the ones based on planar silicon. This thickness matches with the one that shows the maximum reduction in surface reflectance. PACS 81.07.-b; 42.79.Wc; 81.16.Rf; 81.15.Cd PMID:24808799

Design and development of a new generation of UV-visible-light-driven nanosized codoped titanium dioxide photocatalysts and biocides/sporocides, and environmental applications

NASA Astrophysics Data System (ADS)

Hamal, Dambar B.

For solar environmental remediation, a new generation of nanosized (< 10 nm) titanium dioxide photocatalysts codoped with metals and nonmetals, or metals only were prepared by the xero-gel and aero-gel methods. For silver or cobalt-based xero-gel titanium dioxide photocatalysts, photoactivities tests revealed that codoping of titanium dioxide with a metal (1% Ag or 2% Co) and nonmetals (carbon and sulfur) is necessary to achieve high-activities for acetaldehyde degradation under visible light (wavelength > 420 nm). It was concluded that high visible-light-activities for acetaldehyde degradation over codoped titanium dioxide were attributed to an interplay of anatase crystallinity, high-surface area, reduced band-gap (< 3.0 eV), uniform dispersion of doped metal ions, and suppressed recombination rate of photogenerated electronhole pairs. Moreover, the nature and amount of codoped metals play a significant role in visible-light-induced photocatalysis. Metals (Al, Ga, and In) doped/codoped titanium dioxide photocatalysts were prepared by the aero-gel method. The photocatalytic studies showed that activities of metal doped/codoped photocatalysts under UV light (wavelength < 400 nm) were found to be dependent on pollutants. Indium demonstrated beneficial effects in both textural and photocatalytic properties. Gallium and indium codoped titanium dioxide photocatalysts displayed even better performance in the CO oxidation reaction under UV light. Notably, titanium dioxide codoped with Ga, In, and Pt, exhibited unique photoactivities for the CO oxidation under both UV and visible light irradiation, indicating that this system could have promise for the water-gas shift reaction for hydrogen production. Silver-based nanostructured titanium dioxide samples were developed for killing human pathogens (Escherichia coli cells and Bacillus subtilis spores). Biocidal tests revealed that silver, carbon, and sulfur codoped titanium dioxide nanoparticles (< 10 nm) possess very strong

Zinc oxide wide band gap semiconductor for optoelectronic devices

NASA Astrophysics Data System (ADS)

Choopun, Supab

The main objective of this dissertation is to study the key aspects of ZnO-based materials for fabrication of wide band gap optoelectronic devices. ZnO has received attention due to its direct band gap, alloying and doping capabilities. It has similar properties to that of GaN, a material system that has become very important for the fabrication of blue light emitting diodes, laser diodes, detectors, etc. In this study, ZnO and related materials were grown in thin film form on c-plane sapphire substrates by pulsed laser deposition and then, these films were mainly studied in terms of their structural, optical and electrical properties. The studied key aspects include growth and optimization of device quality ZnO films, band gap tailoring of ZnO films by alloying, fabrication of quantum well structures, and impurity doping for n-type and p-type ZnO films. The growth and optimization of ZnO films have been studied as a function of substrate temperature and oxygen background pressure. By tuning the growth temperature and oxygen pressure during the initial and final stages of growth, it was possible to control desirable surface, interface chemistry structure, crystalline quality, and optoelectronic properties of the films while maintaining high quality epitaxy. Band gap tailoring has been studied by alloying of ZnO with MgO. MgZnO alloy films exhibit two phases, hexagonal and cubic, depending on the Mg concentration in the MgZnO lattice. The band gap energy of MgZnO alloys can be varied in a wide range from 3.3 eV to 4.0 eV for hexagonal structured films and 4.0 to 7.6 eV for cubic structured films. Studies both n-type as well as p-type doping and activation in ZnO films are reported. It was found that In-doped ZnO films with high optical transparency and high electrical conductivity can be grown at temperature below 300°C. P-type ZnO films have been studied by using a cationic-codoping method. Weak p-type conductivity in ZnO films was obtained from Cu and Al codoping

Does doping with aluminum alter the effects of ZnO nanoparticles on the metabolism of soil pseudomonads?

PubMed

Fang, Tommy; Watson, Jean-Luc; Goodman, Jordan; Dimkpa, Christian O; Martineau, Nicole; Das, Siddhartha; McLean, Joan E; Britt, David W; Anderson, Anne J

2013-02-22

Doping of ZnO nanoparticles (NPs) is being used to increase their commercialization in the optical and semiconductor fields. This paper addresses whether doping with Al alters how ZnO NPs at nonlethal levels modifies the metabolism of soil-borne pseudomonads which are beneficial in performing bioremediation or promoting plant growth. The differences in X-ray diffraction (XRD) patterns, observed between commercial ZnO and Al-doped ZnO NPs indicated the aluminum was present as Al NPs. Both particles aggregated in the bacterial growth medium and formed colloids of different surface charges. They had similar effects on bacterial metabolism: rapid, dose-dependent loss in light output indicative of temporary toxicity in a biosensor constructed in Pseudomonas putida KT2440; increased production of a fluorescent pyoverdine-type siderophore, and decreased levels of indole acetic acid and phenazines in Pseudomonas chlororaphis O6. Solubilization of Zn and Al from the NPs contributed to these responses to different extents. These findings indicate that Al-doping of the ZnO NPs did not reduce the ability of the NPs to alter bacterial metabolism in ways that could influence performance of the pseudomonads in their soil environment. Copyright © 2012. Published by Elsevier GmbH.

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts.

PubMed

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-12-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10 -2 Ω·cm 2 . Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

NASA Astrophysics Data System (ADS)

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-07-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Removal of dibutyl phthalate from aqueous environments using a nanophotocatalytic Fe, Ag-ZnO/VIS-LED system: modeling and optimization.

PubMed

Akbari-Adergani, B; Saghi, M H; Eslami, A; Mohseni-Bandpei, A; Rabbani, M

2018-06-01

An (Fe, Ag) co-doped ZnO nanostructure was synthesized by a simple chemical co-precipitation method and used for the degradation of dibutyl phthalate (DBP) in aqueous solution under visible light-emitting diode (LED) irradiation. (Fe, Ag) co-doped ZnO nanorods were characterized by powder X-ray diffraction, Fourier transform infrared spectroscopy, UV-VIS diffuse reflectance spectroscopy, elemental mapping, Field emission scanning electron microscopy, transmission electron microscope and Brunauer-Emmett-Teller surface area analysis. A Central Composite Design was used to optimize the reaction parameters for the removal of DBP by the (Fe, Ag) co-doped ZnO nanorods. The four main reaction parameters optimized in this study were the following: pH, time of radiation, concentration of the nanorods and initial DBP concentration. The interaction between the four parameters was studied and modeled using the Design Expert 10 software. A maximum reduction of 95% of DBP was achieved at a pH of 3, a photocatalyst concentration of 150 mg L -1 and a DBP initial DBP concentration of 15 mg L -1 . The results showed that the (Fe, Ag) co-doped ZnO nanorods under low power LED irradiation can be used as an effective photocatalyst for the removal of DBP from aqueous solutions.

Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

PubMed

Li, X D; Chen, T P; Liu, Y; Leong, K C

2014-09-22

Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing.

Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shafura, A. K., E-mail: shafura@ymail.com; Azhar, N. E. I.; Uzer, M.

2016-07-06

CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

Ho3+-Yb3+ codoped tellurite based glasses in visible lasers and optical devices: Judd-Ofelt analysis and frequency upconversion

NASA Astrophysics Data System (ADS)

Azam, Mohd; Rai, Vineet Kumar

2017-04-01

The optical absorption and frequency upconversion emission in the Ho3+/Yb3+ codoped TeO2-ZnO (TZ), TeO2-ZnO-WO3 (TZW) and TeO2-ZnO-WO3-TiO2 (TZWTi) glasses prepared by melting and quenching method has been studied. Judd-Ofelt theory has been used to calculate the Judd-Ofelt intensity parameters (Ω2, Ω4 and Ω6), transition probabilities, radiative lifetimes, absorption cross sections and the branching ratios. Upconversion (UC) emission bands centered at ∼ 549 nm, ∼658 nm and ∼754 nm are observed upon 980 nm excitation. On codoping with the Yb3+ ions at 3.0 mol% the upconversion emission intensity enhancement of about ∼57 times, ∼342 times and ∼480 times for the green band whereas for the red band arising from the Ho3+ ions it is about ∼71 times, ∼438 times and ∼707 times respectively have been observed. The enhancement observed in the UC emission intensity is explained on the basis of efficient energy transfer from Yb3+ to Ho3+, larger absorption cross section, larger oscillator strengths and increase in the local field corrections factor. The spectroscopic quality factor Ω4/Ω6 has been calculated to get the information about the developed materials for laser applications. The upconversion emission cross section determined on the basis of Judd-Ofelt analysis is found to be maximum for Ho-Yb-TZWTi glass. The nephelauxetic ratio, bonding and covalency parameters have been calculated to know the nature of bonding between the rare earth ions and neighbouring oxygen atoms. The high color purity 83.8% has been reported in the codoped glasses at ∼81.2 W/cm2 pump power density.

Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts

DTIC Science & Technology

2012-01-01

12] J. P. Liu, C. X. Guo, C. M. Li et al., “Carbon-decorated ZnO nanowire array: a novel platform for direct electrochemistry of enzymes and...cited. Vertically aligned, high-density ZnO nanowires (NWs) were grown for the first time on c-plane sapphire using binary alloys of Ni/Au or Cu/Au as...deleterious to the ZnO NW array growth. Significant improvement of the Au adhesion on the substrate was noted, opening the potential for direct

Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence

NASA Astrophysics Data System (ADS)

Fan, Ranran; Lu, Fei; Li, Kaikai; Liu, Kaijing

2018-06-01

This paper investigated the controllable growth of Ge nanocrystal (nc-Ge) in (Ge, Er) co-doped ZnO film, and the relationship between the size of nc-Ge and the enhancement of Er3+ related 1.54 μm photoluminescence (PL). It was found that nc-Ge with size of ∼5 nm was formed by annealing treatment at 600 °C. The intensity of 1.54 μm was significantly enhanced due to the existence of nc-Ge and showed an obvious dependence on nanocrystal size. The size of nc-Ge increased with the increase of the annealing temperature, and the nanocrystal with size of ∼5 nm made the most obvious contribution to PL enhancement. Prolonging annealing time could improve the crystalline structure of ZnO matrix but had no effect on PL intensity. The experimental results showed that the PL enhancement was mainly achieved by transferring the energy to Er through the resonance absorption of nc-Ge.

Structural, linear and nonlinear optical properties of co-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Shaaban, E. R.; El-Hagary, M.; Moustafa, El Sayed; Hassan, H. Shokry; Ismail, Yasser A. M.; Emam-Ismail, M.; Ali, A. S.

2016-01-01

Different compositions of Co-doped zinc oxide [(Zn(1- x)Co x O) ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10)] thin films were evaporated onto highly clean glass substrates by thermal evaporation technique using a modified source. The structural properties investigated by X-ray diffraction revealed hexagonal wurtzite ZnO-type structure. The crystallite size of the films was found to decrease with increasing Co content. The optical characterization of the films has been carried out using spectral transmittance and reflectance obtained in the wavelength range from 300 to 2500 nm. The refractive index has been found to increase with increasing Co content. It was further found that optical energy gap decreases from 3.28 to 3.03 eV with increasing Co content from x = 0 to x = 0.10, respectively. The dispersion of refractive index has been analyzed in terms of Wemple-DiDomenico (WDD) single-oscillator model. The oscillator parameters, the single-oscillator energy ( E o), the dispersion energy ( E d), and the static refractive index ( n 0), were determined. The nonlinear refractive index of the Zn(1- x)Co x O thin films was calculated and revealed well correlation with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system.

Non-polar p-type Zn0.94Mn0.05Na0.01O texture: Growth mechanism and codoping effect

NASA Astrophysics Data System (ADS)

Zhang, L. Q.; Lu, B.; Lu, Y. H.; Ye, Z. Z.; Lu, J. G.; Pan, X. H.; Huang, J. Y.

2013-02-01

The microstructure and crystal orientations of polycrystalline films crucially affect the properties and performance of the films. Controlling preferred orientations (PO) and related film morphology are necessary to obtain the desirable properties. In this paper, we demonstrate a rational and effective route toward the realization of non-polar p-type ZnO thin film with surface texture on quartz substrate through Mn-Na codoping. It is uncovered experimentally and theoretically that mono-doping of Mn creates opportunity to realize PO from polar (c-axis) to non-polar ((101¯0), (101¯1), and (112¯0)) changing. With Mn-Na codoping, an acute modulation of the growth behavior and electrical conductivity of the film have been revealed, leading to weak p-type non-polar Zn0.94Mn0.05Na0.01O (ZMNO) texture. The dominant mechanism for the non-polar self-texture in the current paper is deliberately elucidated as resulting from the interplane surface diffusion with the cooperative effect of impurity dopants. The ZMNO films exhibit p-type conduction with hole concentration of 9.51 × 1015-1.86 × 1017 cm-3 and enhanced room temperature (RT) ferromagnetism possessing a saturation magnetization (Ms) of 1.52 μB/Mn. The results have potential applications in development of non-polar optoelectronic devices such as lighting emitting diodes (LEDs).

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

PubMed Central

Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

2016-01-01

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers. PMID:27181337

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.

PubMed

Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

2016-05-16

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mezdrogina, M. M., E-mail: Margaret.m@mail.ioffe.ru; Vinogradov, A. Ya.; Kuzmin, R. V.

For ZnO films, nanorods, and bulk single crystals doped with Er{sup +} ions, it is shown that the effect of codopants introduced into the cation and ion sublattices and the observation of a high-intensity emission band at the wavelength λ{sub max} = 1535 nm are defined by the local environment of the Er{sup +} ion. Doping of the films and single crystals with Er{sup +} ions by diffusion brings about an infrared (IR) emission band with a low intensity because of an inadequate concentration of impurity ions. The emission intensity of this band can be raised by introducing additional Ag,more » Au, or N{sup +} impurities into the ZnO films. The UV-emission intensity of the Er-doped films and single crystals at λ{sub max} = 368–372 nm is identical to that of the undoped films. ZnO nanorods doped with Er only or together with Al or Ga codopants exhibit only one IR band (at λ{sub max} = 1535 nm), whose intensity decreases upon the introduction of codopants. Doping of the nanorods with the N{sup +} gaseous impurity during growth (930 < T < 960°C) and then with the Er{sup +} impurity by diffusion does not yield a substantial increase in the IR-emission intensity compared to the that of the corresponding band for nanorods not doped with the N{sup +} impurity. In the Er-doped nanorods, whose photoluminescence spectra exhibit a high-intensity band at λ{sub max} = 1535 nm, the UV emission band at λ{sub max} = 372 nm is practically lacking.« less

Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

PubMed Central

2014-01-01

To provide a front transparent electrode for use in highly efficient hydrogenated amorphous silicon (a-Si:H) thin-film solar cells, porous flat layer and micro-patterns of zinc oxide (ZnO) nanoparticle (NP) layers were prepared through ultraviolet nanoimprint lithography (UV-NIL) and deposited on Al-doped ZnO (AZO) layers. Through this, it was found that a porous micro-pattern of ZnO NPs dispersed in resin can optimize the light-trapping pattern, with the efficiency of solar cells based on patterned or flat mesoporous ZnO layers increased by 27% and 12%, respectively. PMID:25276101

Toward a durable superhydrophobic aluminum surface by etching and ZnO nanoparticle deposition.

PubMed

Rezayi, Toktam; Entezari, Mohammad H

2016-02-01

Fabrication of suitable roughness is a fundamental step for acquiring superhydrophobic surfaces. For this purpose, a deposition of ZnO nanoparticles on Al surface was carried out by simple immersion and ultrasound approaches. Then, surface energy reduction was performed using stearic acid (STA) ethanol solution for both methods. The results demonstrated that ultrasound would lead to more stable superhydrophobic Al surfaces (STA-ZnO-Al-U) in comparison with simple immersion method (STA-ZnO-Al-I). Besides, etching in HCl solution in another sample was carried out before ZnO deposition for acquiring more mechanically stable superhydrophobic surface. The potentiodynamic measurements demonstrate that etching in HCl solution under ultrasound leads to superhydrophobic surface (STA-ZnO-Al(E)-U). This sample shows remarkable decrease in corrosion current density (icorr) and long-term stability improvement versus immersion in NaCl solution (3.5%) in comparison with the sample prepared without etching (STA-ZnO-Al-U). Scanning electron micrograph (SEM) and energy-dispersive X-ray spectroscopy (EDX) confirmed a more condense and further particle deposition on Al substrate when ultrasound was applied in the system. The crystallite evaluation of deposited ZnO nanoparticles was carried out using X-ray diffractometer (XRD). Finally, for STA grafting verification on Al surface, Fourier transform infrared in conjunction with attenuated total reflection (FTIR-ATR) was used as a proper technique. Copyright © 2015 Elsevier Inc. All rights reserved.

Acceptor Type Vacancy Complexes In As-Grown ZnO

NASA Astrophysics Data System (ADS)

Zubiaga, A.; Tuomisto, F.; Zuñiga-Pérez, J.

2010-11-01

One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (˜3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, LiZn and NaZn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

Optimized structure stability and electrochemical performance of LiNi0.8Co0.15Al0.05O2 by sputtering nanoscale ZnO film

NASA Astrophysics Data System (ADS)

Lai, Yan-Qing; Xu, Ming; Zhang, Zhi-An; Gao, Chun-Hui; Wang, Peng; Yu, Zi-Yang

2016-03-01

LiNi0.8Co0.15Al0.05O2 (NCA) is one of the most promising cathode material for lithium-ion batteries (LIBs) in electric vehicles, which is successfully adopted in Tesla. However, the dissolution of the cation into the electrolyte is still a one of the major challenges (fading capacity and poor cyclability, etc.) presented in pristine NCA. Herein, a homogeneous nanoscale ZnO film is directly sputtered on the surface of NCA electrode via the magnetron sputtering (MS). This ZnO film is evidenced by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The results clearly demonstrate that ZnO film is fully and uniformly covered on the NCA electrodes. After 90 cycles at 1.0C, the optimized MS-2min coated NCA electrode delivers much higher discharge capacity with 169 mAh g-1 than that of the pristine NCA electrode with 127 mAh g-1. In addition, the discharge capacity also reaches 166 mAh g-1 at 3.0C, as compared to that of 125 mAh g-1 for the pristine electrode. The improved electrochemical performance can be ascribed to the superiority of the MS ZnO film that reduce charge transfer resistance and protect the NCA electrode from cation dissolution.

Alternative Dielectric Films for rf MEMS Capacitive Switches Deposited using Atomic Layer Deposited Al2O3/ZnO Alloys

DTIC Science & Technology

2006-07-02

A s c c s r t h s l © K 1 b c A a e t s C t o 0 d Sensors and Actuators A 135 (2007) 262–272 Alternative dielectric films for rf MEMS capacitive...Zn concentrations in the alloy films , which was lower than expected. Atomic force microscopy images evealed an average surface roughness of 0.27 nm...that was independent of deposition temperature and film composition. The dielectric constants of he Al2O3/ZnO ALD alloys films were calculated to be

Boron and oxygen-codoped porous carbon as efficient oxygen reduction catalysts

NASA Astrophysics Data System (ADS)

Lei, Zhidan; Chen, Hongbiao; Yang, Mei; Yang, Duanguang; Li, Huaming

2017-12-01

A low-cost boron- and oxygen-codoped porous carbon electrocatalyst towards oxygen reduction reaction (ORR) has been fabricated by a facile one-step pyrolysis approach, while a boron- and oxygen-rich polymer network was used as precursor. The boron- and oxygen-codoped carbon catalyst with high ORR electrocatalytic activity is comparable to that of Pt/C and is superior to that of catalysts doped solely with boron atoms or with oxygen atoms. Furthermore, the optimized boron- and oxygen-codoped carbon catalyst possesses excellent methanol tolerance and long-term durability in alkaline media. The high electrocatalytic activity of the dual-doped carbon catalysts can be attributed to the synergistic effects of high surface area, predominant mesostructure, abundant active oxygen-containing groups, and effective boron doping. The present results show that this boron- and oxygen-codoping strategy could be as a promising way for the preparation of highly efficient ORR catalysts.

Highly Repeatable and Recoverable Phototransistors Based on Multifunctional Channels of Photoactive CdS, Fast Charge Transporting ZnO, and Chemically Durable Al2O3 Layers.

PubMed

Ahn, Cheol Hyoun; Kang, Won Jun; Kim, Ye Kyun; Yun, Myeong Gu; Cho, Hyung Koun

2016-06-22

Highly repeatable and recoverable phototransistors were explored using a "multifunctional channels" structure with multistacked chalcogenide and oxide semiconductors. These devices were made of (i) photoactive CdS (with a visible band gap), (ii) fast charge transporting ZnO (with a high field-effect mobility), and (iii) a protection layer of Al2O3 (with high chemical durability). The CdS TFT without the Al2O3 protection layer did not show a transfer curve due to the chemical damage that occurred on the ZnO layer during the chemical bath deposition (CBD) process used for CdS deposition. Alternatively, compared to CdS phototransistors with long recovery time and high hysteresis (ΔVth = 19.5 V), our "multi-functional channels" phototransistors showed an extremely low hysteresis loop (ΔVth = 0.5V) and superior photosensitivity with repeatable high photoresponsivity (52.9 A/W at 400 nm). These improvements are likely caused by the physical isolation of the sensing region and charge transport region by the insertion of the ultrathin Al2O3 layer. This approach successfully addresses some of the existing problems in CdS phototransistors, such as the high gate-interface trap site density and high absorption of molecular oxygen, which originate from the polycrystalline CdS.

Insights into the effect of iron and cobalt doping on the structure of nanosized ZnO.

PubMed

Giuli, Gabriele; Trapananti, Angela; Mueller, Franziska; Bresser, Dominic; d'Acapito, Francesco; Passerini, Stefano

2015-10-05

Here we report an in-depth structural characterization of transition metal-doped zinc oxide nanoparticles that have recently been used as anode materials for Li-ion batteries. Structural refinement of powder X-ray diffraction (XRD) data allowed the determination of small though reproducible changes in the unit cell dimensions of four ZnO samples (wurtzite structure) prepared with different dopants or different synthesis conditions. Moreover, large variations of the full width at half-maximum of the XRD reflections indicate that the crystallinity of the samples decreases in the order ZnO, Zn0.9Co0.1O, Zn0.9Fe0.1O/C, and Zn0.9Fe0.1O (the crystallite sizes as determined by Williamson-Hall plots are 42, 29, 15, and 13 nm, respectively). X-ray absorption spectroscopy data indicate that Co is divalent, whereas Fe is purely trivalent in Zn0.9Fe0.1O and 95% trivalent (Fe(3+)/(Fe(3+) + Fe(2+)) ratio = 0.95) in Zn0.9Fe0.1O/C. The aliovalent substitution of Fe(3+) for Zn(2+) implies the formation of local defects around Fe(3+) such as cationic vacancies or interstitial oxygen for charge balance. The EXAFS (extended X-ray absorption fine structure) data, besides providing local Fe-O and Co-O bond distances, are consistent with a large amount of charge-compensating defects. The Co-doped sample displays similar EXAFS features to those of pure ZnO, suggesting the absence of a large concentration of defects as found in the Fe-doped samples. These results are of substantial importance for understanding and elucidating the modified electrochemical lithiation mechanism by introducing transition metal dopants into the ZnO structure for the application as lithium-ion anode material.

Preparation and photocatalytic activity of nonmetal Co-doped titanium dioxide photocatalyst

NASA Astrophysics Data System (ADS)

Sun, Xiaogang; Xing, Jun; Qiu, Jingping

2016-06-01

A series of boron and sulfur co-doped titanium dioxide (TiO2) photocatalysts were prepared by a sol-gel method using boric acid, thiourea and tetrabutyl titanate [Ti(OC4H9)4] as precursors. The photoabsorbance of as-prepared photocatalysts was measured by UV-Vis diffuse reflectance spectroscopy (DRS), and its microstructure was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and N2 adsorption-desorption measurements. The prepared photocatalysts consisted of the anatase phase mainly in the form of spherical particles. The photocatalytic performance was studied by photodegradation of methyl blue (MB) in water under UV and visible light irradiation. The calcination temperature and the codoping content influenced the photoactivity. The synergistic effect of boron and sulfur co-doping played an important role in improving the photocatalytic activity. In addition, the possibility of cyclic usage of codoped TiO2 was also confirmed, the photocatalytic activity of TiO2 remained above 91% of that of the fresh sample after being used four times. It was shown that the co-doped TiO2 could be activated by visible light and could thus be potentially applied for the treatment of water contaminated by organic pollutants.

Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme.

PubMed

Huang, Chun-Ying; Lee, Ya-Ju; Lin, Tai-Yuan; Chang, Shao-Lun; Lian, Jan-Tian; Lin, Hsiu-Mei; Chen, Nie-Chuan; Yang, Ying-Jay

2014-02-15

In this work p-ZnO/n-GaN heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated n-ZnO films on InN/GaN/Si wafers were converted to p-type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our p-type ZnO film has a high carrier concentration of 3.73×10¹⁷ cm⁻³, a high mobility of 210 cm²/Vs, and a low resistivity of 0.079 Ωcm. As a result, the proposed p-ZnO/n-GaN heterojunction diode displays a well-behaving current rectification of a typical p-n junction, and the measured current versus voltage (I-V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of p-ZnO/n-GaN heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.

Holistic electronic response underlying the development of magnetism in co-doped diluted magnetic semiconductors

NASA Astrophysics Data System (ADS)

Andriotis, Antonis N.; Menon, Madhu

2018-05-01

A systematic analysis of the properties of codoped diluted magnetic semiconductors (DMSs) reveals the role and the effect of the codopants in dictating the magnetic features of the DMSs. Our results indicate that the magnetic features of a codoped DMS is the outcome of synergistic electronic processes of the whole system rather than a local hybridization process isolated from the rest of the system. Specifically, the d-orbital hybridization of the (co)dopants and the introduction of their impurity bands lead to the readjustment of the position of the p-band center of the host’s anions and that of the valence band maximum (VBM). The overall effect of these is to pull the hybridized d-bands of the (co)dopants relative to the Fermi energy, E F , which in turn dictate the value of the magnetic moment of both the dopant as well as the codopant. More precisely, the magnetic moment of a dopant shows an almost linearly increasing (decreasing) variation as the dopant’s d-band center (the latter dictated by the codopant) moves away from (gets closer to) E F . Our results thus suggest a completely new approach in the investigation and understanding of the origin of the defect induced magnetism and support previous reports suggesting the Fermi-energy engineering as a mean for developing high T C DMSs. These trends are demonstrated with results obtained for GaN, GaP, and CdS doped with one of the V, Mn, Co and Cu dopants and codoped with the transition metals of the 3d-series.

Photocatalytic oxidation of propylene on La and N codoped TiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Liu, Jinfeng; Li, Haiyan; Zong, Lanlan; Li, Qiuye; Wang, Xiaodong; Zhang, Min; Yang, Jianjun

2015-02-01

Lanthanum- and nitrogen-codoped TiO2 photocatalysts was synthesized using orthorhombic nanotubes titanic acid as the precursor by a simple impregnation and subsequent calcination method. The morphology, phase structure, and properties of La- and N-codoped TiO2 were well characterized by transmission electron microscopy, X-ray diffraction, Raman spectra, X-ray photoelectron spectroscopy, and UV-Vis diffuse reflectance spectra. The La-/N-codoped TiO2 showed excellent photoactivity of propylene oxidation compared with the single-doped TiO2 and La-/N-codoped P25 TiO2 nanoparticles under visible light irradiation. The origin of the enhancement of the visible light-responsive photocatalytic activity was discussed in detail.

Design of high-activity single-atom catalysts via n-p codoping

NASA Astrophysics Data System (ADS)

Wang, Xiaonan; Zhou, Haiyan; Zhang, Xiaoyang; Jia, Jianfeng; Wu, Haishun

2018-03-01

The large-scale synthesis of stable single-atom catalysts (SACs) in experiments remains a significant challenge due to high surface free energy of metal atom. Here, we propose a concise n-p codoping approach, and find it can not only disperse the relatively inexpensive metal, copper (Cu), onto boron (B)-doped graphene, but also result in high-activity SACs. We use CO oxidation on B/Cu codoped graphene as a prototype example, and demonstrate that: (1) a stable SAC can be formed by stronger electrostatic attraction between the metal atom (n-type Cu) and support (p-type B-doped graphene). (2) the energy barrier of the prototype CO oxidation on B/Cu codoped graphene is 0.536 eV by the Eley-Rideal mechanism. Further analysis shows that the spin selection rule can provide well theoretical insight into high activity of our suggested SAC. The concept of n-p codoping may lead to new strategy in large-scale synthesis of stable single-atom catalysts.

57Fe CEMS study on dilute metal ions codoped SnO2 thin films prepared by spray pyrolysis

NASA Astrophysics Data System (ADS)

Nomura, Kiyoshi; Koike, Yuya; Nakanishi, Akio

2017-11-01

Dilute Mn-Fe, Co-Fe and V-Fe codoped tin oxide films prepared by spray pyrolysis were characterized by 57Fe conversion electron Mössbauer spectrometry (CEMS) at room temperature (RT) and at 20 K. Two kinds of paramagnetic Fe3+ species were detected at RT; one doublet 1 (D1) with IS = 0.36-0.37 mm/s, QS = 0.69-0.75 mm/s and LW = 0.32-0.40 mm/s, and another doublet 2 (D2) with IS = 0.31-0.35 mm/s QS = 1.16-1.25 mm/s and LW = 0.46-0.52 mm/s. CEMS at 20 K provided more distinguished doublets than at RT. It is found that especially D2 with relatively small IS and large QS values are influenced by other metal ions codoped in SnO2 matrix, whereas D1 with relatively large IS and small QS has the parameters close to the models of Fe-VO1 and Fe-2VO1-Fe models (Nomura et al. Phys. Rev. B 75, 184411 2007; Mudarra Navarro et al. J. Phys. Chem. C 119, 5596-5603 2015).

Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires.

PubMed

He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

2017-06-16

In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g -1 at a scan rate of 20 mV s -1 , which is almost twice that of ZnO NWs (191.5 F g -1 ). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g -1 at a current density of 1.33 A g -1 with an energy density of 25.2 W h kg -1 at the power density of 896.44 W kg -1 . In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires

NASA Astrophysics Data System (ADS)

He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

2017-06-01

In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

Efficient upconversion emission in Ho3+/Nd3+ co-doped oxyfluorosilicate glasses

NASA Astrophysics Data System (ADS)

Devarajulu, G.; Raju, B. Deva Prasad

2018-04-01

We report on an efficient Ho3+ and Ho3+/Nd3+ co-doped oxyfluorosilicate glasses upon excitation with an 808 nm laser diode. The detailed fluorescence have been studied under this excitation source and energy transfer mechanisms in Ho3+/Nd3+ co-doped oxyfluorosilicate glasses. The upconversion peaks at 486, 547 and 596 nm were observed in Nd3+/Ho3+ co-doped sample. The intensity of upconversion emission transitions in Ho3+ depends on the neodymium codopent concentration. These results indicate that Nd3+ ions can be potentially used as sensitizer for Ho3+ ions to stimulate the intense upconversion emission. The energy transfer mechanism between Nd3+ and Ho3+ was analyzed pursuant to the absorption spectra, upconversion spectra and the energy level structures of Nd3+ and Ho3+ ions have been briefly discussed.

Eu/Tb codoped spindle-shaped fluorinated hydroxyapatite nanoparticles for dual-color cell imaging

NASA Astrophysics Data System (ADS)

Ma, Baojin; Zhang, Shan; Qiu, Jichuan; Li, Jianhua; Sang, Yuanhua; Xia, Haibing; Jiang, Huaidong; Claverie, Jerome; Liu, Hong

2016-06-01

Lanthanide doped fluorinated hydroxyapatite (FAp) nanoparticles are promising cell imaging nanomaterials but they are excited at wavelengths which do not match the light sources usually found in a commercial confocal laser scanning microscope (CLSM). In this work, we have successfully prepared spindle-shaped Eu/Tb codoped FAp nanoparticles by a hydrothermal method. Compared with single Eu doped FAp, Eu/Tb codoped FAp can be excited by a 488 nm laser, and exhibit both green and red light emission. By changing the amounts of Eu and Tb peaks, the emission in the green region (500-580 nm) can be decreased to the benefit of the emission in the red region (580-720 nm), thus reaching a balanced dual color emission. Using MC3T3-E1 cells co-cultured with Eu/Tb codoped FAp nanoparticles, it is observed that the nanoparticles are cytocompatible even at a concentration as high as 800 μg ml-1. The Eu/Tb codoped FAp nanoparticles are located in the cytoplasm and can be monitored by dual color--green and red imaging with a single excitation light at 488 nm. At a concentration of 200 μg ml-1, the cytoplasm is saturated in 8 hours, and Eu/Tb codoped FAp nanoparticles retain their fluorescence for at least 3 days. The cytocompatible Eu/Tb codoped FAp nanoparticles with unique dual color emission will be of great use for cell and tissue imaging.Lanthanide doped fluorinated hydroxyapatite (FAp) nanoparticles are promising cell imaging nanomaterials but they are excited at wavelengths which do not match the light sources usually found in a commercial confocal laser scanning microscope (CLSM). In this work, we have successfully prepared spindle-shaped Eu/Tb codoped FAp nanoparticles by a hydrothermal method. Compared with single Eu doped FAp, Eu/Tb codoped FAp can be excited by a 488 nm laser, and exhibit both green and red light emission. By changing the amounts of Eu and Tb peaks, the emission in the green region (500-580 nm) can be decreased to the benefit of the emission in the

A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

NASA Astrophysics Data System (ADS)

Guo, Tao; Sun, Bai; Mao, Shuangsuo; Zhu, Shouhui; Xia, Yudong; Wang, Hongyan; Zhao, Yong; Yu, Zhou

2018-03-01

In this work, the Cu(In1-xGax)Se2 (CIGS), Al doped ZnO (AZO) and Mo has been used for constructing a resistive switching device with AZO/CIGS/Mo sandwich structure grown on a transparent glass substrate. The device represents a high-performance memory characteristics under ambient temperature. In particularly, a resistance ratio change phenomenon have been observed in our device for the first time.

ZnO nanorod array/CuAlO2 nanofiber heterojunction on Ni substrate: synthesis and photoelectrochemical properties.

PubMed

Ding, Juan; Sui, Yongming; Fu, Wuyou; Yang, Haibin; Zhao, Bo; Li, Minghui

2011-07-22

A novel ZnO nanorod array (NR)/CuAlO(2) nanofiber (NF) heterojunction nanostructure was grown on a substrate of Ni plates using sol-gel synthesis for the NFs and hydrothermal reaction for the NRs. Compared with a traditional ZnO/CuAlO(2) laminar film nanostructure, the photocurrent of this fibrous network heterojunction is significantly increased. A significant blue-shift of the absorption edge and a favorable forward current to reverse current ratio at applied voltages of -2 to +2 V were observed in this heterojunction with the increase of Zn(2+) ion concentration in the hydrothermal reaction. Furthermore, the photoelectrochemical properties were investigated and the highest photocurrent of 3.1 mA cm(-2) was obtained under AM 1.5 illumination with 100 mW cm(-2) light intensity at 0.71 V (versus Ag/AgCl). This novel 3D fibrous network nanostructure plays an important role in the optoelectronic field and can be extended to other binary or ternary oxide compositions for various applications.

ZnO nanorod array/CuAlO2 nanofiber heterojunction on Ni substrate: synthesis and photoelectrochemical properties

NASA Astrophysics Data System (ADS)

Ding, Juan; Sui, Yongming; Fu, Wuyou; Yang, Haibin; Zhao, Bo; Li, Minghui

2011-07-01

A novel ZnO nanorod array (NR)/CuAlO2 nanofiber (NF) heterojunction nanostructure was grown on a substrate of Ni plates using sol-gel synthesis for the NFs and hydrothermal reaction for the NRs. Compared with a traditional ZnO/CuAlO2 laminar film nanostructure, the photocurrent of this fibrous network heterojunction is significantly increased. A significant blue-shift of the absorption edge and a favorable forward current to reverse current ratio at applied voltages of - 2 to + 2 V were observed in this heterojunction with the increase of Zn2 + ion concentration in the hydrothermal reaction. Furthermore, the photoelectrochemical properties were investigated and the highest photocurrent of 3.1 mA cm - 2 was obtained under AM 1.5 illumination with 100 mW cm - 2 light intensity at 0.71 V (versus Ag/AgCl). This novel 3D fibrous network nanostructure plays an important role in the optoelectronic field and can be extended to other binary or ternary oxide compositions for various applications.

Facile synthesis of Zn1-xCoxO/ZnO core/shell nanostructures and their application to dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Manthina, Venkata; Agrios, Alexander G.

2017-04-01

Heterostructures consisting of Co-doped ZnO nanorod cores encased in an undoped ZnO shell were successfully synthesized to serve as photoanodes for dye-sensitized solar cells (DSSCs) by a two-step chemical bath deposition (CBD) technique. This yields a highly favorable structure in which electrons injected from the dye into the ZnO then step down in energy into the Co-doped core, where the electron is transported to the collector while the ZnO shell acts as a barrier to recombination with the electrolyte. Incorporation of the core/shell structures into DSSCs resulted in large improvements in photocurrent and photovoltage in comparison to pure ZnO nanorod-based DSSCs. SEM and XRD characterization indicate incorporation of the Co2+ into the ZnO matrix, without separation of the Co into other phases, providing no energy barriers. In addition, the ability of these heterostructures to reduce recombination rates in redox couples with fast recombination rates was probed by comparing DSSC device performance in both iodide/triiodide-based and ferrocene/ferrocenium-based electrolytes.

Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

NASA Astrophysics Data System (ADS)

Hamada, Takahiro; Ito, Akihiro; Nagao, Nobuaki; Suzuki, Nobuyasu; Fujii, Eiji; Tsujimura, Ayumu

2013-04-01

We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al2O3 substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 ×1018 cm-3, an electron mobility of 41 cm2/(V.s), and a resistivity of 2.2 ×10-2 Ω.cm. A low specific contact resistivity of 4.3 ×10-3 Ω.cm2 was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.

Efficient Auger Charge-Transfer Processes in ZnO

NASA Astrophysics Data System (ADS)

Stehr, J. E.; Chen, S. L.; Svensson, B. G.; Buyanova, I. A.; Chen, W. M.

2018-05-01

Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labeled as NBX) in electron-irradiated ZnO. Even though the energy position of the NBX line is close to that for bound excitons in ZnO, it has distinctively different magneto-optical properties. Photoelectron paramagnetic resonance measurements reveal a connection and a charge-transfer process involving NBX and Fe and Al centers. The experimental results are explained within a model which assumes that the NBX is a neutral donor bound exciton at a defect center located near a Fe impurity and an Auger-type charge-transfer process occurs between NBX and Fe3 + . While the NBX dissociates, its hole is captured by an excited state of Fe3 + and the released energy is transferred to the NBX electron, which is excited to the conduction band and subsequently trapped by a substitutional AlZn shallow donor.

Nonlinear refraction of Nd3+-Li+ co-doped CdS-PVP nanostructure

NASA Astrophysics Data System (ADS)

Talwatkar, S. S.; Sunatkari, A. L.; Tamgadge, Y. S.; Muley, G. G.

2018-05-01

Third-order optical nonlinearity of the co-doped CdS nanoparticles embedded in polymer thin films is studied with the Z-scan technique with 632.8 nm excitation using a cw laser. The results show that the co-doped CdS nanocomposite film exhibits enhanced negative nonlinear refractive index in the order of n2 ≈ 10-5 cm2/W, as compared to the undoped CdS nanoparticles. Nonlinear refractive index of co-doped CdS-PVP thin film are found maximum for the sample doped with 5 wt% of Nd3+-Li+ concentration. The underlying mechanism is discussed.

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

Ramifications of codoping SrI2:Eu with isovalent and aliovalent impurities

NASA Astrophysics Data System (ADS)

Feng, Qingguo; Biswas, Koushik

2016-12-01

Eu2+ doped SrI2 is an important scintillator having applications in the field of radiation detection. Codoping techniques are often useful to improve the electronic response of such insulators. Using first-principles based approach, we report on the properties of SrI2:Eu and the influence of codoping with aliovalent (Na, Cs) and isovalent (Mg, Ca, Ba, and Sn) impurities. These codopants do not preferably bind with Eu and are expected to remain as isolated impurities in the SrI2 host. As isolated defects they display amphoteric behavior having, in most cases, significant ionization energies of the donor and acceptor levels. Furthermore, the acceptor states of Na, Cs, and Mg can bind with I-vacancy forming charge compensated donor-acceptor pairs. Such pairs may also bind additional holes or electrons similar to the isolated defects. Lack of deep-to-shallow behavior upon codoping and its ramifications will be discussed.

Defect Engineering by Codoping in KCaI3 :Eu2 + Single-Crystalline Scintillators

NASA Astrophysics Data System (ADS)

Wu, Yuntao; Li, Qi; Jones, Steven; Dun, Chaochao; Hu, Sheng; Zhuravleva, Mariya; Lindsey, Adam C.; Stand, Luis; Loyd, Matthew; Koschan, Merry; Auxier, John; Hall, Howard L.; Melcher, Charles L.

2017-09-01

Eu2 + -doped alkali or alkali earth iodide scintillators with energy resolutions ≤3 % at 662 keV promise the excellent discrimination ability for radioactive isotopes required for homeland-security and nuclear-nonproliferation applications. To extend their applications to x-ray imaging, such as computed tomography scans, the intense afterglow which delays the response time of such materials is an obstacle that needs to be overcome. However, a clear understanding of the origin of the afterglow and feasible solutions is still lacking. In this work, we present a combined experimental and theoretical investigation of the physical insights of codoping-based defect engineering which can reduce the afterglow effectively in KCaI3:Eu2 + single-crystal scintillators. We illustrate that Sc3 + codoping greatly suppresses the afterglow, whereas Y3 + , Gd3 + , or La3 + codoping enhances the afterglow. Meanwhile, a light yield of 57 000 photons / MeV and an energy resolution of 3.4% at 662 keV can be maintained with the appropriate concentration of Sc3 + codoping, which makes the material promising for medical-imaging applications. Through our thermoluminescence techniques and density-functional-theory calculations, we are able to identify the defect structures and understand the mechanism by which codoping affects the scintillation performance of KCaI3:Eu2 + crystals. The proposed defect-engineering strategy is further validated by achieving afterglow suppression in Mg2 + codoped KCaI3:Eu2 + single crystals.

Calculation of DSSC parameters based on ZnO nanorod/TiO2 mesoporous photoanode

NASA Astrophysics Data System (ADS)

Safriani, L.; Nurrida, A.; Mulyana, C.; Susilawati, T.; Bahtiar, A.; Aprilia, A.

2017-07-01

Photoanode of dye sensitized solar cell (DSSC) plays an important role as electron transport media to accept photogenerated electron from excited state of dye. There are several physical properties that are required from photoanode of DSSC. It should be highly transparent, have large surface area, has a conduction band lower than LUMO of dye molecule, has high charge carrier mobility and finally has a good stability in redox electrolyte process. In this work, DSSC with structure FTO/ZnO nanorod/TiO2 mesoporous/Ru-dye/gel electrolyte/ Pt/FTO has been fabricated. In order to modified the structures of photoanode, ZnO nanorod was grown on aluminium doped ZnO seed layer by variation concentration of Al (0 wt%, 0.5 wt% and 1.0 wt%). Zinc nitrate hexahydrate and hexamethylenetetramine used as raw materials for ZnO nanorod growth solution and deposited by self-assembly methods on FTO/Al doped ZnO seed layer. It is then followed by deposition of titania (TiO2) paste by screen printing methods. DSSC parameters i.e. ideally factor (n), series resistance (RS ), and shunt resistance (RSH ) was derived from current density-voltage (I-V) curve using the simplify equation of ideal diode model. The influences of ZnO photoanode structures to the solar cell performance will be completely discussed.

Thermally Diffused Al:ZnO Thin Films for Broadband Transparent Conductor.

PubMed

Tong, Chong; Yun, Juhyung; Chen, Yen-Jen; Ji, Dengxin; Gan, Qiaoqiang; Anderson, Wayne A

2016-02-17

Here, we report an approach to realize highly transparent low resistance Al-doped ZnO (AZO) films for broadband transparent conductors. Thin Al films are deposited on ZnO surfaces, followed by thermal diffusion processes, introducing the Al doping into ZnO thin films. By utilizing the interdiffusion of Al, Zn, and O, the chemical state of Al on the surfaces can be converted to a fully oxidized state, resulting in a low sheet resistance of 6.2 Ω/sq and an excellent transparency (i.e., 96.5% at 550 nm and higher than 85% up to 2500 nm), which is superior compared with some previously reported values for indium tin oxide, solution processed AZO, and many transparent conducting materials using novel nanostructures. Such AZO films are also applied as transparent conducting layers for AZO/Si heterojunction solar cells, demonstrating their applications in optoelectronic devices.

Sustainable synthesis of metals-doped ZnO nanoparticles from zinc-bearing dust for photodegradation of phenol.

PubMed

Wu, Zhao-Jin; Huang, Wei; Cui, Ke-Ke; Gao, Zhi-Fang; Wang, Ping

2014-08-15

A novel strategy of waste-cleaning-waste is proposed in the present work. A metals-doped ZnO (M-ZnO, M = Fe, Mg, Ca and Al) nanomaterial has been prepared from a metallurgical zinc-containing solid waste "fabric filter dust" by combining sulfolysis and co-precipitation processes, and is found to be a favorable photocatalyst for photodegradation of organic substances in wastewater under visible light irradiation. All the zinc and dopants (Fe, Mg, Ca and Al) for preparing M-ZnO are recovered from the fabric filter dust, without any addition of chemical as elemental source. The dust-derived M-ZnO samples deliver single phase indexed as the hexagonal ZnO crystal, with controllable dopants species. The photocatalytic activity of the dust-derived M-ZnO samples is characterized by photodegradation of phenol aqueous solution under visible light irradiation, giving more prominent photocatalytic behaviors than undoped ZnO. Such enhancements may be attributed to incorporation of the dust-derived metal elements (Fe, Mg, Ca and Al) into ZnO structure, which lead to the modification of band gap and refinement of grain size. The results show a feasibility to utilize the industrial waste as a resource of photodegradating organic substances in wastewater treatments. Copyright © 2014 Elsevier B.V. All rights reserved.

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography.

PubMed

Wu, Yizhi; Giddings, A Devin; Verheijen, Marcel A; Macco, Bart; Prosa, Ty J; Larson, David J; Roozeboom, Fred; Kessels, Wilhelmus M M

2018-02-27

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called "ALD supercycles" is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width-half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm -3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors.

Ligand induced ferromagnetism in ZnO nanostructures.

PubMed

Wang, Qian; Sun, Qiang; Jena, P

2008-10-28

Complementary to the experimental finding that ZnO nanoparticles become ferromagnetic when coated with N and S containing ligands such as dodecylamine and dodecanethiol [Garcia et al., Nano Lett. 7, 1489 (2007)], we provide the first theoretical understanding of the origin of magnetism in ligated ZnO nanoparticles as well as the structural properties of the ligated systems by using density functional theory and generalized gradient approximation for exchange and correlation, and a cluster model for the nanoparticles. We show that N or S atoms of the ligand bind to the Zn sites. The accompanying changes in the Zn-O bond length, hybridization between Zn 4s orbitals with N 2p or S 3p orbitals, and consequently the redistribution of charges between Zn and O atoms result in a magnetic system where the 2p electrons in O and N, and 3p electrons in S sites are spin polarized. Furthermore, the sites nearest to the Zn atom attached to the ligand carry bulk of the magnetic moment. Studies, as a function of cluster size, also illustrate that magnetism resides only on the surface. Our results confirm that the use of ligands can pave a new way for introducing magnetism in ZnO nanostructures, which can be used to develop magnetic sensors to detect N and S containing molecules.

Sensitivity-enhanced Tm3+/Yb3+ co-doped YAG single crystal optical fiber thermometry based on upconversion emissions

NASA Astrophysics Data System (ADS)

Yu, Lu; Ye, Linhua; Bao, Renjie; Zhang, Xianwei; Wang, Li-Gang

2018-03-01

Optical thermometry based on Y3Al5O12 (YAG) single crystal optical fiber with end Tm3+/Yb3+ co-doped is presented. The YAG crystal fiber with end Tm3+/Yb3+ co-doped was grown by laser heated pedestal growth (LHPG) method. Under a 976 nm laser diode excitation, the upconversion (UC) emissions, originating from 3F2,3 →3H6 and 3H4 →3H6 transitions of Tm3+ ions, were investigated in the temperature range from 333 K to 733 K. Interestingly, the UC emission intensity of 3F2,3 →3H6 transition was significantly enhanced with increase of temperature, as compared with the other Tm3+/Yb3+ co-doped materials. The temperature dependence of fluorescence intensity ratio (FIR) of these two emission bands (3F2,3/3H4 →3H6) suggests that this doped YAG crystal fiber can be used as a highly sensitive optical thermal probe, which demonstrates a high absolute sensitivity with the maximum value of 0.021 K-1 at 733 K. In addition, due to the compact structure, strong mechanical strength and high thermal stability, such thermal probe may be a more promising candidate for temperature sensor with a high spatial resolution.

Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

NASA Astrophysics Data System (ADS)

Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

2009-05-01

Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Wang, Xiao; Gan, Xuewei; Zhang, Guozhen; Su, Xi; Zheng, Meijuan; Ai, Zhiwei; Wu, Hao; Liu, Chang

2017-01-01

ZnO thin films were deposited on p-type GaN with a thin In0.17Al0.83N interlayer, forming double heterostructural diodes of n-ZnO/In0.17Al0.83N/p-GaN. The crystalline quality of the ZnO films was improved and its orientation was kept along < 70 7 bar 4 > that was perpendicular to (10 1 bar 1) plane. The reverse leakage current was reduced by introducing the In0.17Al0.83N interlayer. The electroluminescence spectra of the n-ZnO/In0.17Al0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases. The valence-band offset and conduction-band offset between the ZnO and In0.17Al0.83N were determined to be -0.72 and 1.95 eV, respectively.

Controllable dimension of ZnO nanowalls on GaN/c-Al2O3 substrate by vapor phase epitaxy method.

PubMed

Song, W Y; Shin, T I; Kang, S M; Kim, S W; Yang, J H; Park, M H; Yang, C W; Yoon, D H

2008-09-01

Vertically well-aligned ZnO nanowalls were successfully synthesized at 950-1050 degrees C. Ar gas was introduced into the furnace at a flow rate of 2000-2500 sccm. An Au thin film with a thickness of 3 nm was used as a catalyst. The ZnO nanowalls were successfully grown on the substrate and most of them had nearly the same thickness and were oriented perpendicular to the substrate. The morphology and chemical composition of the ZnO nanowalls were examined as a function of the growth conditions examined. It was found that the grown ZnO nanowalls have a single-crystalline hexagonal structure and preferred c-axis growth orientation based on the X-ray diffraction and high-resolution transmission electron microscope measurements. The room temperature photoluminescence showed a strong free-exciton emission band with negligible deep level emission, indicating the high optical property of our ZnO nanowall samples.

Mediator-free interaction of glucose oxidase, as model enzyme for immobilization, with Al-doped and undoped ZnO thin films laser-deposited on polycarbonate supports.

PubMed

V T K P, Fidal; Inguva, Saikumar; Krishnamurthy, Satheesh; Marsili, Enrico; Mosnier, Jean-Paul; T S, Chandra

2017-01-01

Al doped and undoped ZnO thin films were deposited by pulsed-laser deposition on polycarbonate sheets. The films were characterized by optical transmission, Hall effect measurement, XRD and SEM. Optical transmission and surface reflectometry studies showed good transparency with thicknesses ∼100nm and surface roughness of 10nm. Hall effect measurements showed that the sheet carrier concentration was -1.44×10 15 cm -2 for AZO and -6×10 14 cm -2 for ZnO. The films were then modified by drop-casting glucose oxidase (GOx) without the use of any mediators. Higher protein concentration was observed on ZnO as compared to AZO with higher specific activity for ZnO (0.042Umg -1 ) compared to AZO (0.032Umg -1 ), and was in agreement with cyclic voltemmetry (CV). X-ray photoelectron spectroscopy (XPS) suggested that the protein was bound by dipole interactions between AZO lattice oxygen and the amino group of the enzyme. Chronoamperometry showed sensitivity of 5.5μAmM -1 cm -2 towards glucose for GOx/AZO and 2.2μAmM -1 cm -2 for GOx/ZnO. The limit of detection (LoD) was 167μM of glucose for GOx/AZO, as compared to 360μM for GOx/ZnO. The linearity was 0.28-28mM for GOx/AZO whereas it was 0.6-28mM for GOx/ZnO with a response time of 10s. Possibly due to higher enzyme loading, the decrease of impedance in presence of glucose was larger for GOx/ZnO as compared to GOx/AZO in electrochemical impedance spectroscopy (EIS). Analyses with clinical blood serum samples showed that the systems had good reproducibility and accuracy. The characteristics of novel ZnO and AZO thin films with GOx as a model enzyme, should prove useful for the future fabrication of inexpensive, highly sensitive, disposable electrochemical biosensors for high throughput diagnostics. Copyright © 2016 Elsevier Inc. All rights reserved.

Chemo-sensors development based on low-dimensional codoped Mn2O3-ZnO nanoparticles using flat-silver electrodes.

PubMed

Rahman, Mohammed M; Gruner, George; Al-Ghamdi, Mohammed Saad; Daous, Muhammed A; Khan, Sher Bahadar; Asiri, Abdullah M

2013-03-28

Semiconductor doped nanostructure materials have attained considerable attention owing to their electronic, opto-electronic, para-magnetic, photo-catalysis, electro-chemical, mechanical behaviors and their potential applications in different research areas. Doped nanomaterials might be a promising owing to their high-specific surface-area, low-resistances, high-catalytic activity, attractive electro-chemical and optical properties. Nanomaterials are also scientifically significant transition metal-doped nanostructure materials owing to their extraordinary mechanical, optical, electrical, electronic, thermal, and magnetic characteristics. Recently, it has gained significant interest in manganese oxide doped-semiconductor materials in order to develop their physico-chemical behaviors and extend their efficient applications. It has not only investigated the basic of magnetism, but also has huge potential in scientific features such as magnetic materials, bio- & chemi-sensors, photo-catalysts, and absorbent nanomaterials. The chemical sensor also displays the higher-sensitivity, reproducibility, long-term stability, and enhanced electrochemical responses. The calibration plot is linear (r2 = 0.977) over the 0.1 nM to 50.0 μM 4-nitrophenol concentration ranges. The sensitivity and detection limit is ~4.6667 μA cm-2 μM-1 and ~0.83 ± 0.2 nM (at a Signal-to-Noise-Ratio, SNR of 3) respectively. To best of our knowledge, this is the first report for detection of 4-nitrophenol chemical with doped Mn2O3-ZnO NPs using easy and reliable I-V technique in short response time. As for the doped nanostructures, NPs are introduced a route to a new generation of toxic chemo-sensors, but a premeditate effort has to be applied for doped Mn2O3-ZnO NPs to be taken comprehensively for large-scale applications, and to achieve higher-potential density with accessible to individual chemo-sensors. In this report, it is also discussed the prospective utilization of Mn2O3-ZnO NPs on the basis

Chemo-sensors development based on low-dimensional codoped Mn2O3-ZnO nanoparticles using flat-silver electrodes

PubMed Central

2013-01-01

Background Semiconductor doped nanostructure materials have attained considerable attention owing to their electronic, opto-electronic, para-magnetic, photo-catalysis, electro-chemical, mechanical behaviors and their potential applications in different research areas. Doped nanomaterials might be a promising owing to their high-specific surface-area, low-resistances, high-catalytic activity, attractive electro-chemical and optical properties. Nanomaterials are also scientifically significant transition metal-doped nanostructure materials owing to their extraordinary mechanical, optical, electrical, electronic, thermal, and magnetic characteristics. Recently, it has gained significant interest in manganese oxide doped-semiconductor materials in order to develop their physico-chemical behaviors and extend their efficient applications. It has not only investigated the basic of magnetism, but also has huge potential in scientific features such as magnetic materials, bio- & chemi-sensors, photo-catalysts, and absorbent nanomaterials. Results The chemical sensor also displays the higher-sensitivity, reproducibility, long-term stability, and enhanced electrochemical responses. The calibration plot is linear (r2 = 0.977) over the 0.1 nM to 50.0 μM 4-nitrophenol concentration ranges. The sensitivity and detection limit is ~4.6667 μA cm-2 μM-1 and ~0.83 ± 0.2 nM (at a Signal-to-Noise-Ratio, SNR of 3) respectively. To best of our knowledge, this is the first report for detection of 4-nitrophenol chemical with doped Mn2O3-ZnO NPs using easy and reliable I-V technique in short response time. Conclusions As for the doped nanostructures, NPs are introduced a route to a new generation of toxic chemo-sensors, but a premeditate effort has to be applied for doped Mn2O3-ZnO NPs to be taken comprehensively for large-scale applications, and to achieve higher-potential density with accessible to individual chemo-sensors. In this report, it is also discussed the prospective

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

PubMed Central

2018-01-01

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called “ALD supercycles” is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width–half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm–3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors. PMID:29515290

Effect of neutral red incorporation on Al-doped ZnO thin films and its bio-electrochemical interaction with NAD+/NADP+ dependent enzymes.

PubMed

V T, Fidal; T S, Chandra

2018-09-01

A new approach to deposition of electroactive ZnO thin films have been carried out, by one-pot chemical bath deposition with Al dopant and incorporation of neutral red as organic mediator. The morphological, structural and functional characterization of the neutral red incorporated, Al-doped ZnO (NR-AZO) film was carried out using electron microscopy, FTIR, XRD and EIS respectively. The incorporated neutral red was found to induce strain in the crystal of AZO proportional to the concentration used in depositing solution which further affected the charge transfer resistance of the films in solution. One mM neutral red was found to be the optimum concentration for both conductivity and response to NADH/NADPH. The response of the films was further validated by immobilizing NAD + dependent alcohol dehydrogenase (ADH) and NADP + dependent glucose dehydrogenase (GDH) independently. The ADH/NR-AZO showed a sensitivity of 3.2 μA cm -2  mM -1 with a LoD of 1.7 μM of ethanol in the range 5.6 μM-7 mM, whereas GDH/NR-AZO showed a sensitivity of 4.33 μA cm -2  mM -1 with a LoD of 27 μM of glucose in the range 90 μM-4 mM. This method serves as a simple alternative to immobilize the organic redox dyes into the inorganic thin films in a single step making it electroactive towards specific biomolecules. Copyright © 2018 Elsevier Inc. All rights reserved.

First-principles study on codoping effect to enhance photocatalytic activity of anatase TiO2

NASA Astrophysics Data System (ADS)

Bai, Yujie; Zhang, Qinfang; Zheng, Fubao; Yang, Yun; Meng, Qiangqiang; Zhu, Lei; Wang, Baolin

2017-03-01

Codopant is an effective approach to modify the bandgap and band edge positions of transition metal oxide. Here, the electronic structures as well as the optical properties of pristine, mono-doped (N/P/Sb) and codoped (Sb, N/P) anatase TiO2 have been systematically investigated based on density functional theory calculations. It is found that mono-doped TiO2 exhibits either unoccupied or partially occupied intermediate state within the energy gap, which promotes the recombination of electron-hole pairs. However, the presence of (Sb, N/P) codopant not only effectively reduces the width of bandgap by introducing delocalized occupied intermediate states, but also adjusts the band edge alignment to enhance the hydrogen evolution activity of TiO2. Moreover, the optical absorption spectrum for (Sb, N/P) codoped TiO2, which is favored under oxygen-rich condition, demonstrates the improvement of its visible light absorption. These findings will promote the potential application of (Sb, N/P) codoped TiO2 photocatalysis for water splitting under visible light irradiation.

Fabrication and magnetic properties of Fe and Co co-doped ZrO2

NASA Astrophysics Data System (ADS)

Okabayashi, J.; Kono, S.; Yamada, Y.; Nomura, K.

2011-12-01

We investigate the effects of Fe and Co co-doping on the magnetic and electronic properties of ZrO2 ceramics prepared by a sol-gel method, and study their dependence on the annealing temperature. Dilute Fe and Co co-doping into ZrO2 exhibits ferromagnetic behavior at room temperature for annealing temperatures above 900 °C, accompanying the phase transition from tetragonal to monoclinic structure in ZrO2. The electronic structures are studied by x-ray absorption spectroscopy and Mössbauer spectroscopy, which suggest that the Fe3+ and Co2+/Co3+ mixing states are dominant in Fe and Co co-doped ZrO2.

Diode-pumped femtosecond mode-locked Nd, Y-codoped CaF2 laser

NASA Astrophysics Data System (ADS)

Zhu, Jiangfeng; Zhang, Lijuan; Gao, Ziye; Wang, Junli; Wang, Zhaohua; Su, Liangbi; Zheng, Lihe; Wang, Jingya; Xu, Jun; Wei, Zhiyi

2015-03-01

A passively mode-locked femtosecond laser based on an Nd, Y-codoped CaF2 disordered crystal was demonstrated. The Y3+-codoping in Nd : CaF2 markedly suppressed the quenching effect and improved the fluorescence quantum efficiency and emission spectra. With a fiber-coupled laser diode as the pump source, the continuous wave tuning range covering from 1042 to 1076 nm was realized, while the mode-locked operation generated 264 fs pulses with an average output power of 180 mW at a repetition rate of 85 MHz. The experimental results show that the Nd, Y-codoped CaF2 disordered crystal has potential in a new generation diode-pumped high repetition rate chirped pulse amplifier.

Yb3+-Er3+-Tm3+ co-doped nano-glass-ceramics tuneable up-conversion phosphor

NASA Astrophysics Data System (ADS)

Méndez-Ramos, J.; Rodriguez, V. D.; Tikhomirov, V. K.; Del-Castillo, J.; Yanes, A. C.

2008-08-01

Transparent Yb3+-Er3+-Tm3+ co-doped nano-glass-ceramics have been prepared, 32(SiO{2}) 9(AlO{1.5}) 31.5(CdF{2}) 18.5(PbF{2}) 5.5(ZnF{2}): 3.5(Yb-Er-TmF{3}) mol%, where the co-dopants partition mostly to the fluoride PbF{2}-based nano-crystals. A comparative study of the up-conversion luminescence in nano-glass-ceramics and its precursor glass indicates that these materials can be used as blue/green/red tuneable up-conversion phosphor, in particular for white light generation. A ratio between blue, green and red emission bands of the Tm3+ and Er3+ can be widely varied with nano-ceramming of the precursor glass and with changing a pump power of luminescence. The change in the ratio between the blue, green and red emission bands is explained to be due to substantial lowering phonon energy and shortening of inter-dopant distances with nano-ceramming of the precursor glass and due to change in the ratio of 2- and 3-photon up-conversion processes with pump power.

ZnO nanorods/AZO photoanode for perovskite solar cells fabricated in ambient air

NASA Astrophysics Data System (ADS)

La Ferrara, Vera; De Maria, Antonella; Rametta, Gabriella; Della Noce, Marco; Vittoria Mercaldo, Lucia; Borriello, Carmela; Bruno, Annalisa; Delli Veneri, Paola

2017-08-01

ZnO nanorods are a good candidate for replacing standard photoanodes, such as TiO2, in perovskite solar cells and in principle superseding the high performances already obtained. This is possible because ZnO nanorods have a fast electron transport rate due to their large surface area. An array of ZnO nanorods is grown by chemical bath deposition starting from Al-doped ZnO (AZO) used both as a seed layer and as an efficient transparent anode in the visible spectral range. In particular, in this work we fabricate methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells using glass/AZO/ZnO nanorods/perovskite/Spiro-OMeTAD/Au as the architecture. The growth of ZnO nanorods has been optimized by varying the precursor concentrations, growth time and solution temperature. All the fabrication process and photovoltaic characterizations have been carried out in ambient air and the devices have not been encapsulated. Power conversion efficiency as high as 7.0% has been obtained with a good stability over 20 d. This is the highest reported value to the best of our knowledge and it is a promising result for the development of perovskite solar cells based on ZnO nanorods and AZO.

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

PubMed

Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

2016-12-01

Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

Mechanism of Zn Particle Oxidation by H2O and CO2 in the Presence of ZnO

PubMed Central

2014-01-01

In this work we investigate the mechanism of Zn oxidation with CO2 and/or H2O to produce solar derived fuels (CO and/or H2) as part of the Zn/ZnO thermochemical redox cycle. It has been observed that the ZnO contamination of Zn produced by solar thermal reduction of ZnO (solar Zn) facilitates oxidation of the metallic Zn by CO2 and H2O, allowing for nearly complete conversion at temperatures as low as 350 °C. Reaching the same reaction extent starting with pure Zn requires considerably higher temperatures which imposes use of unconventional hard-to-operate reaction configurations utilizing Zn as vapor. The mechanism of this enhancement is investigated by studying the oxidation of solid Zn diluted with ZnO or Al2O3 at 350–400 °C utilizing thermogravimetry. It is found that ZnO acts as the site for the oxidation of Zn originating from the vapor phase, thereby serving as a sink for Zn vapor and maintaining the driving force for sustainable Zn sublimation. As this Zn sublimation competes with the growth of an impervious ZnO scale over the surface of the remaining solid Zn, the presence of the ZnO increases the reaction extent according to the magnitude of its surface area. This mechanism is supported by energy-dispersive X-ray (EDX) spectroscopy, revealing a substantial deposition of produced ZnO over the surface of the ZnO-seeded Al2O3 diluent. PMID:26692637

Mechanism of Zn Particle Oxidation by H2O and CO2 in the Presence of ZnO.

PubMed

Weibel, David; Jovanovic, Zoran R; Gálvez, Elena; Steinfeld, Aldo

2014-11-25

In this work we investigate the mechanism of Zn oxidation with CO 2 and/or H 2 O to produce solar derived fuels (CO and/or H 2 ) as part of the Zn/ZnO thermochemical redox cycle. It has been observed that the ZnO contamination of Zn produced by solar thermal reduction of ZnO (solar Zn) facilitates oxidation of the metallic Zn by CO 2 and H 2 O, allowing for nearly complete conversion at temperatures as low as 350 °C. Reaching the same reaction extent starting with pure Zn requires considerably higher temperatures which imposes use of unconventional hard-to-operate reaction configurations utilizing Zn as vapor. The mechanism of this enhancement is investigated by studying the oxidation of solid Zn diluted with ZnO or Al 2 O 3 at 350-400 °C utilizing thermogravimetry. It is found that ZnO acts as the site for the oxidation of Zn originating from the vapor phase, thereby serving as a sink for Zn vapor and maintaining the driving force for sustainable Zn sublimation. As this Zn sublimation competes with the growth of an impervious ZnO scale over the surface of the remaining solid Zn, the presence of the ZnO increases the reaction extent according to the magnitude of its surface area. This mechanism is supported by energy-dispersive X-ray (EDX) spectroscopy, revealing a substantial deposition of produced ZnO over the surface of the ZnO-seeded Al 2 O 3 diluent.

Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

NASA Astrophysics Data System (ADS)

Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

2016-09-01

In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

Influence of Different Aluminum Sources on the NH3 Gas-Sensing Properties of ZnO Thin Films

NASA Astrophysics Data System (ADS)

Ozutok, Fatma; Karaduman, Irmak; Demiri, Sani; Acar, Selim

2018-02-01

Herein we report Al-doped ZnO films (AZO) deposited on the ZnO seed layer by chemical bath deposition method. Al powder, Al oxide and Al chloride were used as sources for the deposition process and investigated for their different effects on the NH3 gas-sensing performance. The morphological and microstructural properties were investigated by employing x-ray powder diffraction, scanning electron microscopy analysis and energy-dispersive x-ray spectroscopy. The characterization studies showed that the AZO thin films are crystalline and exhibit a hexagonal wurtzite structure. Ammonia (NH3) gas-sensing measurements of AZO films were performed at different concentration levels and different operation temperatures from 50°C to 210°C. The sample based on powder-Al source showed a higher response, selectivity and short response/recovery time than the remaining samples. The powder Al sample exhibited 33% response to 10-ppm ammonia gas at 190°C, confirming a strong dependence on the dopant source type.

Band gap engineering of NaTaO3 using density functional theory: a charge compensated codoping strategy.

PubMed

Modak, Brindaban; Srinivasu, K; Ghosh, Swapan K

2014-08-28

In this theoretical study, we employ a codoping strategy to reduce the band gap of NaTaO3 aimed at improving the photocatalytic activity under visible light. The systematic study includes the effects of metal (W) and nonmetal (N) codoping on the electronic structure of NaTaO3 in comparison to the effect of individual dopants. The feasibility of the introduction of N into the NaTaO3 crystal structure is found to be enhanced in the presence of W, as indicated by the calculated formation energy. This codoping leads to formation of a charge compensated system, beneficial for the minimization of vacancy related defect formation. The electronic structure calculations have been carried out using a hybrid density functional for an accurate description of the proposed system. The introduction of W in place of Ta leads to the appearance of donor states below the conduction band, while N doping in place of oxygen introduces isolated acceptor states above the valence band. The codoping of N and W also passivates undesirable discrete midgap states. This feature is not observed in the case of (Cr, N) codoped NaTaO3 in spite of its charge compensated nature. We have also studied charge non-compensated codoping using several dopant pairs, including anion-anion and cation-anion pairs. However, this non-compensated codoping introduces localized states in between the valence band and the conduction band, and hence may not be effective in enhancing the photocatalytic properties of NaTaO3. The optical spectrum shows that the absorption curve for the (W, N)-codoped NaTaO3 is extended to the visible region due to narrowing of the band gap to 2.67 eV. Moreover, its activity for the photo decomposition of water to produce both H2 and O2 remains intact. Hence, based on the present investigation we can propose (W, N) codoped NaTaO3 as a promising photocatalyst for visible light driven water splitting.

Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN

NASA Astrophysics Data System (ADS)

Lee, Dong-gun; Wakamatsu, Ryuta; Koizumi, Atsushi; Terai, Yoshikazu; Fujiwara, Yasufumi

2013-08-01

The effects of Mg and Si codoping on Eu luminescence properties have been investigated in Eu-doped GaN (GaN:Eu). The Mg codoping into GaN:Eu produced novel luminescence centers consisting of Eu and Mg, and increased photoluminescence (PL) intensity in Eu,Mg-codoped GaN (GaN:Eu,Mg). However, this increased PL intensity was quenched by thermal annealing in N2 ambient, which is due to activation of Mg acceptors. In GaN:Eu,Mg codoped additionally with Si (GaN:Eu,Mg,Si), on the other hand, the Eu-Mg centers disappeared, while an additional luminescence center appeared. Furthermore, the additional luminescence center showed no quenching under N2 annealing because Si donors compensated for the Mg acceptors in GaN. Thermal quenching of the luminescence center was also approximately half of that in GaN:Eu. These results indicate that the codoping with additional impurities in GaN:Eu is a powerful technique to control Eu luminescence centers for realization of improved device performance in red light-emitting diodes using GaN:Eu.

Spatial atomic layer deposition on flexible porous substrates: ZnO on anodic aluminum oxide films and Al{sub 2}O{sub 3} on Li ion battery electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Kashish; Routkevitch, Dmitri; Varaksa, Natalia

2016-01-15

Spatial atomic layer deposition (S-ALD) was examined on flexible porous substrates utilizing a rotating cylinder reactor to perform the S-ALD. S-ALD was first explored on flexible polyethylene terephthalate polymer substrates to obtain S-ALD growth rates on flat surfaces. ZnO ALD with diethylzinc and ozone as the reactants at 50 °C was the model S-ALD system. ZnO S-ALD was then performed on nanoporous flexible anodic aluminum oxide (AAO) films. ZnO S-ALD in porous substrates depends on the pore diameter, pore aspect ratio, and reactant exposure time that define the gas transport. To evaluate these parameters, the Zn coverage profiles in the poresmore » of the AAO films were measured using energy dispersive spectroscopy (EDS). EDS measurements were conducted for different reaction conditions and AAO pore geometries. Substrate speeds and reactant pulse durations were defined by rotating cylinder rates of 10, 100, and 200 revolutions per minute (RPM). AAO pore diameters of 10, 25, 50, and 100 nm were utilized with a pore length of 25 μm. Uniform Zn coverage profiles were obtained at 10 RPM and pore diameters of 100 nm. The Zn coverage was less uniform at higher RPM values and smaller pore diameters. These results indicate that S-ALD into porous substrates is feasible under certain reaction conditions. S-ALD was then performed on porous Li ion battery electrodes to test S-ALD on a technologically important porous substrate. Li{sub 0.20}Mn{sub 0.54}Ni{sub 0.13}Co{sub 0.13}O{sub 2} electrodes on flexible metal foil were coated with Al{sub 2}O{sub 3} using 2–5 Al{sub 2}O{sub 3} ALD cycles. The Al{sub 2}O{sub 3} ALD was performed in the S-ALD reactor at a rotating cylinder rate of 10 RPM using trimethylaluminum and ozone as the reactants at 50 °C. The capacity of the electrodes was then tested versus number of charge–discharge cycles. These measurements revealed that the Al{sub 2}O{sub 3} S-ALD coating on the electrodes enhanced the capacity stability

ZnO and related materials: Plasma-Assisted molecular beam epitaxial growth, characterization and application

NASA Astrophysics Data System (ADS)

Hong, S. K.; Chen, Y.; Ko, H. J.; Wenisch, H.; Hanada, T.; Yao, T.

2001-06-01

This paper will address features of plasma-assisted molecular beam epitaxial growth of ZnO and related materials and their characteristics. Two-dimensional, layer-by-layer growth is achieved both on c-plane sampphire by employing MgO buffer layer growth and on (0001) GaN/Al2O3 template by predepositing a low-temperature buffer layer followed by high-temperature annealing. Such two-dimensional growth results in the growth of high-quality heteroepitaxial ZnO epilayers. Biexciton emission is obtained from such high quality epilayers The polarity of heteroepitaxial ZnO epilayers is controlled by engineering the heterointerfaces. We achieved selective growth of Zn-polar and O-polar ZnO heteroepitaxial layers. The origin of different polarities can be successfully explained by an interface bonding sequence model. N-type conductivity in Gadoped ZnO epilayers is successfully controlled. High conductivity, enough to be applicable to devices, is achieved. MgxZn1-xO/ZnO heterostructures are grown and emission from a ZnO quantum well is observed. Mg incorporation in a MgZnO alloy is determined by in-situ reflection high-energy electron diffraction intensity oscillations, which enables precise control of the composition. Homoepitaxy on commericial ZnO substrates has been examined. Reflection high-energy electron diffraction intensity oscillations during homoepitaxy growth are observed.

Effect of an Electrochemically Oxidized ZnO Seed Layer on ZnO Nanorods Grown by using Electrodeposition

NASA Astrophysics Data System (ADS)

Jeon, Woosung; Leem, Jae-Young

2018-05-01

ZnO nanorods were prepared on a Si substrate with and without a ZnO seed layer formed by electro-oxidation to investigate the effect of the seed layer on their growth. The ZnO nanorods grown on the ZnO seed layer had top surfaces that were flat whereas those grown without it had rough top surfaces, as observed in field-emission scanning electron microscopy images. In the Xray diffraction analysis, all ZnO nanorods showed preferential orientation with the (002) plane. In the case of ZnO nanorods prepared with a ZnO seed layer, the residual stress decreased, and the full width at half maximum of the ZnO (002) plane peak decreased. The photoluminescence spectra show a strong and narrow near-band-edge emission peak and high near-band-edge emission to deep-level emission peak ratio for the ZnO nanorods prepared with the seed layer. With respect to the photoresponse properties, the ZnO nanorods grown with the ZnO seed layer showed higher responsivity and faster rise/decay curves than those grown without it. Thus, the ZnO seed layer formed by electro-oxidation improves the structural, optical, and photoresponse properties of the ZnO nanorods formed on it. This method could serve as a new route for improving the properties of optoelectronic devices.

Persistent photoconductivity in ZnO nanowires: Influence of oxygen and argon ambient

NASA Astrophysics Data System (ADS)

Madel, M.; Huber, F.; Mueller, R.; Amann, B.; Dickel, M.; Xie, Y.; Thonke, K.

2017-03-01

ZnO nanowires typically show persistent photoconductivity (PPC), which depends in their temporal behaviour on the ambient. We investigate ZnO nanowires in oxygen and argon ambient and analyze the PPC both on the short and on the long time scale to sort out the underlying mechanisms. Wavelength dependent excitation shows the energy barrier for the PPC to be around 150 meV below the band gap of ZnO, independent of the ambient atmosphere. In photocurrent measurements at constant wavelength, a log-logistic dependence of the conductivity on the partial oxygen pressure is observed. The experimental results are compared to a model of Bonasewicz et al. [J. Electrochem. Soc. 133, 2270 (1986)] and can be explained by oxygen adsorption processes occurring on the surface of the ZnO nanowires. From temperature dependent measurements of the decay times in oxygen and argon ambient, the related activation energies for the fast and slow decay processes are determined. Comparing our results to theoretical calculations of energy levels of intrinsic defects [Janotti and Van de Walle, Phys. Status Solidi B 248, 799 (2011)], we find oxygen vacancies to be related to the fast decay processes, whereas adsorption and desorption processes of oxygen on the ZnO nanowire surface account for the slow part.

High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

PubMed

Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

2017-09-13

A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

REVIEW ARTICLE: Structure, microstructure and physical properties of ZnO based materials in various forms: bulk, thin film and nano

NASA Astrophysics Data System (ADS)

Singh, Shubra; Thiyagarajan, P.; Mohan Kant, K.; Anita, D.; Thirupathiah, S.; Rama, N.; Tiwari, Brajesh; Kottaisamy, M.; Ramachandra Rao, M. S.

2007-10-01

ZnO is a unique material that offers about a dozen different application possibilities. In spite of the fact that the ZnO lattice is amenable to metal ion doping (3d and 4f), the physics of doping in ZnO is not completely understood. This paper presents a review of previous research works on ZnO and also highlights results of our research activities on ZnO. The review pertains to the work on Al and Mg doping for conductivity and band gap tuning in ZnO followed by a report on transition metal (TM) ion doped ZnO. This review also highlights the work on the transport and optical studies of TM ion doped ZnO, nanostructured growth (ZnO polycrystalline and thin films) by different methods and the formation of unique nano- and microstructures obtained by pulsed laser deposition and chemical methods. This is followed by results on ZnO encapsulated Fe3O4 nanoparticles that show promising trends suitable for various applications. We have also reviewed the non-linear characteristic studies of ZnO based heterostructures followed by an analysis on the work carried out on ZnO based phosphors, which include mainly the nanocrystalline ZnO encapsulated SiO2, a new class of phosphor that is suitable for white light emission.

Enhanced light emission near 2.7 μm from Er-Nd co-doped germanate glass

NASA Astrophysics Data System (ADS)

Bai, Gongxun; Tao, Lili; Li, Kefeng; Hu, Lili; Tsang, Yuen Hong

2013-04-01

Laser glass gain medium that can convert low cost 808 nm diode laser into 2.7 μm has attracted considerable interest due to its potential application for medical surgery fiber laser system. In this study, enhanced 2.7 μm emission has been achieved in Er3+:germanate glass by co-doping with Nd3+ ions under the excitation of an 808 nm diode laser. In the co-doped sample, the experimental results show that the harmful visible emissions via up-conversion were effectively restricted. The reduction of 1.5 μm emission was also detected in the co-doped sample, which indicates significant de-excitation of 4I13/2 Er3+ ion through energy transfer and non-radiative decay in Nd3+ ions. In conclusion, the 2.7 μm emission enhancement achieved was due to the increased optical absorption of 808 nm, efficient energy transfer (ET) with efficiency of 81.73% between Er3+ and Nd3+ ions, and shortening the lifetime of the lower lasing level 4I13/2 Er3+ in the co-doped sample. Therefore, Er3+/Nd3+ co-doped germanate glass could be used to fabricate fiber optical gain media for 2.7 μm laser generation.

Change in structural morphology on addition of ZnO and its effect on fluorescence of Yb³⁺/Er³⁺ doped Y₂O₃.

PubMed

Yadav, R V; Verma, R K; Kaur, G; Rai, S B

2013-02-15

Yb(3+)/Er(3+) codoped Y(2)O(3) phosphor and its composite with ZnO have been synthesized by combustion method. Morphology of the materials has been investigated using X-ray diffraction pattern (XRD) and scanning electron microscopy (SEM) techniques. XRD confirms the constituents as Y(2)O(3) and ZnO, with average crystallite size of 112 nm. On addition of ZnO, a small shifting in XRD pattern of Y(2)O(3) is observed. SEM pattern suggests that the average particle size lies in micro-range (0.5 μm). A dumble like structure is observed for hybrid material on annealing at 1473 K. A strong green (525, 546 nm) with weak blue (411 nm) and red (657 nm) emissions through upconversion has been observed from the phosphor on excitation with 976 nm diode laser. The observed emissions involve (2)H(9/2)→(4)I(15/2), (2)H(11/2)→(4)I(15/2), (4)S(3/2)→(4)I(15/2) and (4)F(9/2)→(4)I(15/2) electronic transitions, respectively. The upconversion process has been confirmed by power dependence measurements and its slope value was found to be 1.85, 1.72 for green and red emissions, respectively. On addition of ZnO, the intensity of these emissions is enhanced several times. The reason behind the enhancement is discussed with the help of the emitting level lifetime. An interesting dual mode property (upconversion and downconversion) to the same material has been observed on excitation with 532 nm laser source. Copyright © 2012 Elsevier B.V. All rights reserved.

Study of the effects of hydroxyapatite nanocrystal codoping by pulsed electron paramagnetic resonance methods

NASA Astrophysics Data System (ADS)

Gafurov, M. R.; Biktagirov, T. B.; Mamin, G. V.; Shurtakova, D. V.; Klimashina, E. S.; Putlyaev, V. I.; Orlinskii, S. B.

2016-03-01

The effect of codoping of hydroxyapatite (HAP) nanocrystals with average sizes of 35 ± 15 nm during "wet" synthesis by CO 3 2- carbonate anions and Mn2+ cations on relaxation characteristics (for the times of electron spin-spin relaxation) of the NO 3 2- nitrate radical anion has been studied. By the example of HAP, it has been demonstrated that the electron paramagnetic resonance (EPR) is an efficient method for studying anion-cation (co)doping of nanoscale particles. It has been shown experimentally and by quantummechanical calculations that simultaneous introduction of several ions can be energetically more favorable than their separate inclusion. Possible codoping models have been proposed, and their energy parameters have been calculated.

Local probe microscopic studies on Al-doped ZnO: Pseudoferroelectricity and band bending at grain boundaries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata, E-mail: tsom@iopb.res.in

2016-01-07

In this paper, based on piezoforce measurements, we show the presence of opposite polarization at grains and grain boundaries of Al-doped ZnO (AZO). The polarization can be flipped by 180° in phase by switching the polarity of the applied electric field, revealing the existence of nanoscale pseudoferroelectricity in AZO grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate. We also demonstrate an experimental evidence on local band bending at grain boundaries of AZO films using conductive atomic force microscopy and Kelvin probe force microscopy. The presence of an opposite polarization at grains and grain boundaries gives rise to a polarization-driven barrier formation atmore » grain boundaries. With the help of conductive atomic force microscopy, we show that the polarization-driven barrier along with the defect-induced electrostatic potential barrier account for the measured local band bending at grain boundaries. The present study opens a new avenue to understand the charge transport in light of both polarization and electrostatic effects.« less

Electromechanical and Photoluminescence Properties of Al-doped ZnO Nanorods Applied in Piezoelectric Nanogenerators

NASA Astrophysics Data System (ADS)

Chang, Wen-Yang; Fang, Te-Hua; Tsai, Ju-Hsuan

2015-02-01

A piezoelectric nanogenerator based on Al-doped ZnO (AZO) nanorods with a V-zigzag layer is investigated at a low temperature. The growth temperature, growth time, growth concentration, photoluminescence (PL) spectrum, and AZO epitaxial growth on the ITO glass substrate using aqueous solution are reported and the associated electromechanical and PL properties are discussed. In general, the properties of piezoelectric nanogenerators and their functionality at ultralow temperatures (near liquid helium temperature) are important for applications in extreme environments. A V-zigzag layer is used to enhance the bending and compression deformation of the piezoelectric nanogenerator. The electromechanical properties of AZO nanorods are tested using an ultrasonic wave generator. Results show that the percent transmittance decreases with increasing growth time and growth temperature. The intensities of the PL spectrum and the (002) peak orientation increases with increasing growth temperature. AZO at a low growth temperature of 90 C has good piezoelectric harvesting efficiency when the piezoelectric nanogenerator has a zigzag structure. The average current, voltage, and power density of the piezoelectric harvesting are 0.76 A, 1.35 mV, and 1.026 nW/mm, respectively. These results confirm the feasibility of growing AZO at low temperature. AZO nanorods have potential for energy harvester applications.

N/S Co-doped Carbon Derived From Cotton as High Performance Anode Materials for Lithium Ion Batteries.

PubMed

Xiong, Jiawen; Pan, Qichang; Zheng, Fenghua; Xiong, Xunhui; Yang, Chenghao; Hu, Dongli; Huang, Chunlai

2018-01-01

Highly porous carbon with large surface areas is prepared using cotton as carbon sources which derived from discard cotton balls. Subsequently, the sulfur-nitrogen co-doped carbon was obtained by heat treatment the carbon in presence of thiourea and evaluated as Lithium-ion batteries anode. Benefiting from the S, N co-doping, the obtained S, N co-doped carbon exhibits excellent electrochemical performance. As a result, the as-prepared S, N co-doped carbon can deliver a high reversible capacity of 1,101.1 mA h g -1 after 150 cycles at 0.2 A g -1 , and a high capacity of 531.2 mA h g -1 can be observed even after 5,000 cycles at 10.0 A g -1 . Moreover, excellently rate capability also can be observed, a high capacity of 689 mA h g -1 can be obtained at 5.0 A g -1 . This superior lithium storage performance of S, N co-doped carbon make it as a promising low-cost and sustainable anode for high performance lithium ion batteries.

N/S co-doped carbon derived from Cotton as high performance anode materials for lithium ion batteries

NASA Astrophysics Data System (ADS)

Xiong, Jiawen; Pan, Qichang; Zheng, Fenghua; Xiong, Xunhui; Yang, Chenghao; Hu, Dongli; Huang, Chunlai

2018-04-01

Highly porous carbon with large surface areas is prepared using cotton as carbon sources which derived from discard cotton balls. Subsequently, the sulfur-nitrogen co-doped carbon was obtained by heat treatment the carbon in presence of thiourea and evaluated as Lithium-ion batteries anode. Benefiting from the S, N co-doping, the obtained S, N co-doped carbon exhibits excellent electrochemical performance. As a result, the as-prepared S, N co-doped carbon can deliver a high reversible capacity of 1101.1 mA h g-1 after 150 cycles at 0.2 A g-1, and a high capacity of 531.2 mA h g-1 can be observed even after 5000 cycles at 10.0 A g-1. Moreover, excellently rate capability also can be observed, a high capacity of 689 mA h g-1 can be obtained at 5.0 A g-1. This superior lithium storage performance of S, N co-doped carbon make it as a promising low-cost and sustainable anode for high performance lithium ion batteries.

N/S Co-doped Carbon Derived From Cotton as High Performance Anode Materials for Lithium Ion Batteries

PubMed Central

Xiong, Jiawen; Pan, Qichang; Zheng, Fenghua; Xiong, Xunhui; Yang, Chenghao; Hu, Dongli; Huang, Chunlai

2018-01-01

Highly porous carbon with large surface areas is prepared using cotton as carbon sources which derived from discard cotton balls. Subsequently, the sulfur-nitrogen co-doped carbon was obtained by heat treatment the carbon in presence of thiourea and evaluated as Lithium-ion batteries anode. Benefiting from the S, N co-doping, the obtained S, N co-doped carbon exhibits excellent electrochemical performance. As a result, the as-prepared S, N co-doped carbon can deliver a high reversible capacity of 1,101.1 mA h g−1 after 150 cycles at 0.2 A g−1, and a high capacity of 531.2 mA h g−1 can be observed even after 5,000 cycles at 10.0 A g−1. Moreover, excellently rate capability also can be observed, a high capacity of 689 mA h g−1 can be obtained at 5.0 A g−1. This superior lithium storage performance of S, N co-doped carbon make it as a promising low-cost and sustainable anode for high performance lithium ion batteries. PMID:29755966

Remarkable optical red shift and extremely high optical absorption coefficient of V-Ga co-doped TiO2

NASA Astrophysics Data System (ADS)

Deng, Quanrong; Han, Xiaoping; Gao, Yun; Shao, Guosheng

2012-07-01

A first attempt has been made to study the effect of codoping of transition metal and sp metal on the electronic structure and associated optical properties of TiO2, through V-Ga codoped thin films. V-Ga codoped rutile TiO2 films were fabricated on fused quartz substrates using pulsed laser ablation, followed by heat treatment at high temperatures. Gigantic redshift in the optical absorption edge was observed in V-Ga co-doped TiO2 materials, from UV to infrared region with high absorption coefficient. Through combined structural characterization and theoretical modeling, this is attributed to the p-d hybridization between the two metals. This leads to additional energy bands to overlap with the minimum of the conduction band, leading to remarkably narrowed band gap free of mid-gap states. The direct-gap of the co-doped phase is key to the remarkably high optical absorption coefficient of the coped titania.

Nd3+, Y3+-codoped SrF2 laser ceramics

NASA Astrophysics Data System (ADS)

Li, Weiwei; Mei, Bingchu; Song, Jinghong

2015-09-01

0.15 at.% Nd3+, 5 at.% Y3+-codoped SrF2 laser ceramic based on single crystal was prepared by extensive plastic deformation. Microstructure, optical and laser properties of the Nd3+, Y3+:SrF2 ceramic were investigated. The lasing of Nd3+, Y3+-codoped SrF2 ceramics with diode pumping have been observed and true CW laser operation around 1057 nm and 1050 nm was obtained with a slope efficiency of 31.9%. In particular, the fracture toughness of the ceramic is 0.98 MPa m1/2, which is approximately two times higher than that of single crystal.

Enhanced Cr(VI) removal by polyethylenimine- and phosphorus-codoped hierarchical porous carbons.

PubMed

Chen, Shixia; Wang, Jun; Wu, Zeliang; Deng, Qiang; Tu, Wenfeng; Dai, Guiping; Zeng, Zheling; Deng, Shuguang

2018-08-01

The amino- and phosphorus-codoped (N,P-codoped) porous carbons derived from oil-tea shells were facilely fabricated through a combination of phosphoric acid (H 3 PO 4 ) activation and amino (polyethylenimine, PEI) modification method. The as-synthesized carbon adsorbents were systematically characterized and evaluated for Cr(VI) removal in aqueous solutions. The relationship between adsorbent properties and adsorption behaviors was illustrated. Moreover, the influences of contact time, initial Cr(VI) concentration, pH, coexisting anions and temperature were also investigated. The adsorption behavior of Cr(VI) could be perfectly described by the pseudo-second-order kinetic model and Sips adsorption model. The maximum adsorption capacity of Cr(VI) on the carbon adsorbents synthesized in this work was 355.0 mg/g, and this excellent Cr(VI) capacity could be sustained with other coexisting anions. In addition to high surface area and suitable pore size distribution, the high Cr(VI) removal capacity is induced by rich heteroatoms incorporation and the Cr(VI) removal mechanism was clearly illustrated. Furthermore, the continuous column breakthrough experiment on obtained N,P-codoped carbon was conducted and well fitted by the Thomas model. This work revealed that PEI modification and P-containing groups could significantly enhance Cr(VI) adsorption capacity and make these N,P-codoped biomass-derived carbons potent adsorbents in practical water treatment applications. Copyright © 2018 Elsevier Inc. All rights reserved.

Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

DOEpatents

Mascarenhas, Angelo

2015-07-07

Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

NASA Astrophysics Data System (ADS)

Sumiyama, Takashi; Fukumoto, Takaya; Ohtsu, Yasunori; Tabaru, Tatsuo

2017-05-01

Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO) thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 - 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002) axis.

Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors.

PubMed

Huang, Heh-Chang; Hsieh, Tsung-Eong

2010-07-23

ZnO particles with an average size of about 5 nm were prepared via a sol-gel chemical route and the silane coupling agent, (3-glycidyloxypropyl)-trimethoxysilane (GPTS), was adopted to enhance the dispersion of the ZnO nanoparticles in ethyl glycol (EG) solution. A ZnO surface potential as high as 66 mV was observed and a sedimentation test showed that the ZnO precursor solution remains transparent for six months of storage, elucidating the success of surface modification on ZnO nanoparticles. The ZnO thin films were then prepared by spin coating the precursor solution on a Si wafer and annealing treatments at temperatures up to 500 degrees C were performed for subsequent preparation of ZnO thin film transistors (TFTs). Microstructure characterization revealed that the coalescence of ZnO nanoparticles occurs at temperatures as low as 200 degrees C to result in a highly uniform, nearly pore-free layer. However, annealing at higher temperatures was required to remove organic residues in the ZnO layer for satisfactory device performance. The 500 degrees C-annealed ZnO TFT sample exhibited the best electrical properties with on/off ratio = 10(5), threshold voltage = 17.1 V and mobility (micro) = 0.104 cm(2) V(-1) s(-1).

Electrodeposition of ZnO nanorod arrays on ZnO substrate with tunable orientation and optical properties.

PubMed

Jehl, Z; Rousset, J; Donsanti, F; Renou, G; Naghavi, N; Lincot, D

2010-10-01

The electrodeposition of ZnO nanorods on ZnO:Al films with different orientations is reported. The influence of the total charge exchanged during electrodeposition on the nanorod's geometry (length, diameter, aspect ratio and surface density) and the optical transmission properties of the nanorod arrays is studied on a [0001]-oriented ZnO:Al substrate. The nanorods are highly vertically oriented along the c axis, following the lattice matching with the substrate. The growth on a [1010] and [1120] ZnO:Al-oriented substrate with c axis parallel to the substrate leads to a systematic deviation angle of 55 degrees from the perpendicular direction. This finding has been explained by the occurrence of a minority orientation with the [1011] planes parallel to the surface, with a preferential growth on corresponding [0001] termination. Substrate crystalline orientation is thereby found to be a major parameter in finely tuning the orientation of the nanorod array. This new approach allows us to optimize the light scattering properties of the films.

Nonlinear optical properties of Nd3+-Li+ co-doped ZnS-PVP thin films

NASA Astrophysics Data System (ADS)

Talwatkar, S. S.; Sunatkari, A. L.; Tamgadge, Y. S.; Muley, G. G.

2018-04-01

The nonlinear optical properties of Nd3+-Li+ co-doped ZnS-PVP nanocomposite were studied using a continuous wave (CW) He-Ne laser (λ = 632.8 nm)by z-scan technique. The nonlinear refractive index (n2), absorption coefficient (β) and third order nonlinear susceptibility (χ(3)) of PVP thin films embedded with Nd3+-Li+ co-doped ZnS NPs was found in the order of 10-7 cm2/W, 10-6 cm/W and 10-7 esu respectively. The nonlinearity found increasing with Nd3+-Li+ co-dopant concentration. Based on the results, it is proposed that this material is a new class of luminescent material suitable in optoelectronics devices application, especially in light-emitting devices, electroluminescent devices, display devices, etc.

ZnS/Al2S3 Layer as a Blocking Layer in Quantum Dot Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Vafapoor, Borzoo; Fathi, Davood; Eskandari, Mehdi

2017-12-01

In this research, the effect of treatment of the CdS/CdSe sensitized ZnO photoanode by ZnS, Al2S3, and ZnS/Al2S3 nanoparticles as a barrier layer on the performance of quantum dot sensitized solar cell is investigated. Current density-voltage (J-V) characteristics show that cell efficiency is enhanced from 3.62% to 4.82% with treatment of a CdS/CdSe/ZnS sensitized ZnO photoanode by Al2S3 nanoparticles. In addition, short- circuit current density (J sc) is increased from 11.5 mA/cm2 to 14.8 mA/cm2. The results extracted from electrochemical impedance spectroscopy indicate that charge transfer resistance (R ct) in photoanode/electrolyte interfaces decreases with deposition of Al2S3 nanoparticles on CdS/CdSe/ZnS sensitized ZnO photoanodes, while the chemical capacitance of photoanode (C μ ) and electron lifetime (t n) increase. Also, results revealed that cell performance is considerably decreased with the treatment of the AL2S3 blocking layer incorporated between ZnO nanorods and CdS/CdSe QDs.

ZnS/Al2S3 Layer as a Blocking Layer in Quantum Dot Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Vafapoor, Borzoo; Fathi, Davood; Eskandari, Mehdi

2018-03-01

In this research, the effect of treatment of the CdS/CdSe sensitized ZnO photoanode by ZnS, Al2S3, and ZnS/Al2S3 nanoparticles as a barrier layer on the performance of quantum dot sensitized solar cell is investigated. Current density-voltage ( J- V) characteristics show that cell efficiency is enhanced from 3.62% to 4.82% with treatment of a CdS/CdSe/ZnS sensitized ZnO photoanode by Al2S3 nanoparticles. In addition, short- circuit current density ( J sc) is increased from 11.5 mA/cm2 to 14.8 mA/cm2. The results extracted from electrochemical impedance spectroscopy indicate that charge transfer resistance ( R ct) in photoanode/electrolyte interfaces decreases with deposition of Al2S3 nanoparticles on CdS/CdSe/ZnS sensitized ZnO photoanodes, while the chemical capacitance of photoanode ( C μ ) and electron lifetime ( t n) increase. Also, results revealed that cell performance is considerably decreased with the treatment of the AL2S3 blocking layer incorporated between ZnO nanorods and CdS/CdSe QDs.

Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer.

PubMed

Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S; Atif, Muhammad; Ansari, Anees A; Willander, Magnus

2013-09-30

In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices.

Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer

PubMed Central

Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S.; Atif, Muhammad; Ansari, Anees A.; Willander, Magnus

2013-01-01

In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices. PMID:28788336

Defect pair formation in fluorine and nitrogen codoped TiO2

NASA Astrophysics Data System (ADS)

Kordatos, A.; Kelaidis, N.; Chroneos, A.

2018-04-01

Titanium oxide is extensively investigated because of its high chemical stability and its photocatalytic properties; nevertheless, the large band gap limits its activity to a small portion of the solar spectrum. Nitrogen and fluorine codoping is an efficient defect engineering strategy to increase the photocatalytic activity of titanium oxide. In the present study, we apply density functional theory to investigate the interaction of nitrogen with fluorine and the formation of defect pairs. We show that in fluorine and nitrogen codoped titanium oxide, the FiNi, FONi, and FiNTi defects can form. Their impact on the electronic structure of titanium oxide is discussed.

Insights into the proteomic response of soybean towards Al₂O₃, ZnO, and Ag nanoparticles stress.

PubMed

Hossain, Zahed; Mustafa, Ghazala; Sakata, Katsumi; Komatsu, Setsuko

2016-03-05

Understanding the complex mechanisms involved in plant response to nanoparticles is indispensable in assessing the impact of nano-pollutants on environment. The present study compares the phytotoxicity of three different metal-based nanoparticles (Al2O3, ZnO, and Ag) in soybean seedling at proteome level. Plant growth, rigidity of roots, and root cell viability were markedly affected by ZnO- and Ag-NPs stress; while, Al2O3-NPs challenged soybean maintained normal seedling growth like control. Moreover, severe oxidative burst was evident in ZnO-NPs and Ag-NPs treatments. Gel-free proteomic analysis of NPs stressed soybean roots revealed 104 commonly changed proteins primarily associated with secondary metabolism, cell organization, and hormone metabolism. Oxidation-reduction cascade related genes, such as GDSL motif lipase 5, SKU5 similar 4, galactose oxidase, and quinone reductase were up-regulated in Al2O3-NPs challenged roots and down-regulated in ZnO- and Ag-NPs treatments. In comparison to root, 16 common proteins were found to be significantly changed in leaves of NPs exposed soybean that were predominantly associated to photosystem and protein degradation. The proteomic findings suggest that high abundance of proteins involved in oxidation-reduction, stress signaling, hormonal pathways related to growth and development might be the principal key for optimum growth of soybean under Al2O3-NPs stress. Copyright © 2015 Elsevier B.V. All rights reserved.

Microstructure and dielectric properties of (Nb + In) co-doped rutile TiO2 ceramics

NASA Astrophysics Data System (ADS)

Li, Jinglei; Li, Fei; Zhuang, Yongyong; Jin, Li; Wang, Linghang; Wei, Xiaoyong; Xu, Zhuo; Zhang, Shujun

2014-08-01

The (Nb + In) co-doped TiO2 ceramics recently attracted considerable attention due to their colossal dielectric permittivity (CP) (˜100,000) and low dielectric loss (˜0.05). In this research, the 0.5 mol. % In-only, 0.5 mol. % Nb-only, and 0.5-7 mol. % (Nb + In) co-doped TiO2 ceramics were synthesized by standard conventional solid-state reaction method. Microstructure studies showed that all samples were in pure rutile phase. The Nb and In ions were homogeneously distributed in the grain and grain boundary. Impedance spectroscopy and I-V behavior analysis demonstrated that the ceramics may compose of semiconducting grains and insulating grain boundaries. The high conductivity of grain was associated with the reduction of Ti4+ ions to Ti3+ ions, while the migration of oxygen vacancy may account for the conductivity of grain boundary. The effects of annealing treatment and bias filed on electrical properties were investigated for co-doped TiO2 ceramics, where the electric behaviors of samples were found to be susceptible to the annealing treatment and bias field. The internal-barrier-layer-capacitance mechanism was used to explain the CP phenomenon, the effect of annealing treatment and nonlinear I-V behavior for co-doped rutile TiO2 ceramics. Compared with CaCu3Ti4O12 ceramics, the high activation energy of co-doped rutile TiO2 (3.05 eV for grain boundary) was thought to be responsible for the low dielectric loss.

Down-conversion phosphors as noble-metal-free co-catalyst in ZnO for efficient visible light photocatalysis

NASA Astrophysics Data System (ADS)

Chu, Haipeng; Liu, Xinjuan; Liu, Jiaqing; Lei, Wenyan; Li, Jinliang; Wu, Tianyang; Li, Ping; Li, Huili; Pan, Likun

2017-01-01

Exploring novel visible light responsive photocatalysts is one of greatly significant issues from the viewpoint of using solar energy. Here we report the yellow-orange emitting α-Si3N4-doped Lu3Al5O12:Ce3+ (Lu3Al5-xSixO12-xNx:Ce3+) phosphors as a noble-metal-free co-catalyst for enhanced visible light photocatalytic activity of ZnO. The results show that ZnO-Lu3Al5-xSixO12-xNx:Ce3+ hybrid photocatalysts using a fast microwave-assisted approach exhibits a 91% methylene blue (MB) degradation under visible light irradiation at 240 min, which evidence the synergistic effect of ZnO and Lu3Al5-xSixO12-xNx:Ce3+ that suppress the rate of charge recombination and increase the self-sensitized degradation of MB. ZnO-down conversion phosphors can be envisaged as potential candidate in environmental engineering and solar energy applications.

Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.

PubMed

Xu, Lei; Chen, Qian; Liao, Lei; Liu, Xingqiang; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Jiang, Changzhong; Wang, Jinlan; Li, Jinchai

2016-03-02

Hydrogenation is one of the effective methods for improving the performance of ZnO thin film transistors (TFTs), which originate from the fact that hydrogen (H) acts as a defect passivator and a shallow n-type dopant in ZnO materials. However, passivation accompanied by an excessive H doping of the channel region of a ZnO TFT is undesirable because high carrier density leads to negative threshold voltages. Herein, we report that Mg/H codoping could overcome the trade-off between performance and reliability in the ZnO TFTs. The theoretical calculation suggests that the incorporation of Mg in hydrogenated ZnO decrease the formation energy of interstitial H and increase formation energy of O-vacancy (VO). The experimental results demonstrate that the existence of the diluted Mg in hydrogenated ZnO TFTs could be sufficient to boost up mobility from 10 to 32.2 cm(2)/(V s) at a low carrier density (∼2.0 × 10(18) cm(-3)), which can be attributed to the decreased electron effective mass by surface band bending. The all results verified that the Mg/H codoping can significantly passivate the VO to improve device reliability and enhance mobility. Thus, this finding clearly points the way to realize high-performance metal oxide TFTs for low-cost, large-volume, flexible electronics.

L-lactic acid and sodium p-toluenesulfonate co-doped polypyrrole for high performance cathode in sodium ion battery

NASA Astrophysics Data System (ADS)

Liao, Qishu; Hou, Hongying; Liu, Xianxi; Yao, Yuan; Dai, Zhipeng; Yu, Chengyi; Li, Dongdong

2018-04-01

In this work, polypyrrole (PPy) was co-doped with L-lactic acid (LA) and sodium p-toluenesulfonate (TsONa) for high performance cathode in sodium ion battery (SIB) via facile one-step electropolymerization on Fe foil. The as-synthesized LA/TsONa co-doped PPy cathode was investigated in terms of scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), galvanostatic charge/discharge and cyclic voltammetry (CV). The results suggested that some oval-bud-like LA/TsONa co-doped PPy particles did form and tightly combine with the surface of Fe foil; furthermore, LA/TsONa co-doped PPy cathode also delivered higher electrochemical performances than TsONa mono-doped PPy cathode. For example, the initial specific discharge capacity was as high as about 124 mAh/g, and the reversible specific capacity still maintained at about 110 mAh/g even after 50 cycles, higher than those of TsONa mono-doped PPy cathode. The synergy effect of multi components of LA/TsONa co-doped PPy cathode should be responsible for high electrochemical performances.

Nitrogen/Sulfur-Codoped Carbon Materials from Chitosan for Supercapacitors

NASA Astrophysics Data System (ADS)

Li, Mei; Han, Xianlong; Chang, Xiaoqing; Yin, Wenchao; Ma, Jingyun

2016-08-01

d-Methionine and chitosan have been used for fabrication of nitrogen/sulfur-codoped carbon materials by a hydrothermal process followed by carbonization at 750°C for 3 h. The as-prepared carbon materials showed enhanced electrochemical performance, combining electrical double-layer capacitance with pseudocapacitance owing to the doping with sulfur and nitrogen. The specific capacitance of the obtained carbon material reached 135 F g-1 at current density of 1 A g-1, which is much higher than undoped chitosan (67 F g-1). The capacitance retention of the carbon material was almost 97.2% after 5000 cycles at current density of 1 A g-1. With such improved electrochemical performance, the nitrogen/sulfur-codoped carbon material may have promising potential for use in energy-storage electrodes of supercapacitors.

PAMAM templated N,Pt co-doped TiO2 for visible light photodegradation of brilliant black.

PubMed

Nzaba, Sarre Kadia Myra; Ntsendwana, Bulelwa; Mamba, Bhekie Brilliance; Kuvarega, Alex Tawanda

2018-05-01

This study examined the photocatalytic degradation of an azo dye brilliant black (BB) using non-metal/metal co-doped TiO 2 . N,Pt co-doped TiO 2 photocatalysts were prepared by a modified sol-gel method using amine-terminated polyamidoamine dendrimer generation 0 (PG0) as a template and source of nitrogen. Structural, morphological, and textural properties were evaluated using scanning electron microscopy coupled to energy-dispersive X-ray spectroscopy (SEM/EDX), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction spectroscopy (XRD), X-ray photoelectron spectroscopy (XPS), thermal gravimetric analysis (TGA), Fourier transform infrared (FTIR), Raman spectroscopy (RS), photoluminescence (PL) and ultra-violet/visible spectroscopy (UV-Vis). The synthesized photocatalysts exhibited lower band gap energies as compared to the Degussa P-25, revealing a red shift in band gap towards the visible light absorption region. Photocatalytic activity of N,Pt co-doped TiO 2 was measured by the reaction of photocatalytic degradation of BB dye. Enhanced photodegradation efficiency of BB was achieved after 180-min reaction time with an initial concentration of 50 ppm. This was attributed to the rod-like shape of the materials, larger surface area, and enhanced absorption of visible light induced by N,Pt co-doping. The N,Pt co-doped TiO 2 also exhibited pseudo-first-order kinetic behavior with half-life and rate constant of 0.37 and 0.01984 min -1 , respectively. The mechanism of the photodegradation of BB under the visible light irradiation was proposed. The obtained results prove that co-doping of TiO 2 with N and Pt contributed to the enhanced photocatalytic performances of TiO 2 for visible light-induced photodegradation of organic contaminants for environmental remediation. Therefore, this work provides a new approach to the synthesis of PAMAM templated N,Pt co-doped TiO 2 for visible light photodegradation of brilliant black.

Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

NASA Astrophysics Data System (ADS)

Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

2012-09-01

We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

Fabrication of Gd/Eu-codoped SmPO4 nanorods for dual-modal magnetic resonance and bio-optical imaging.

PubMed

Wu, Zhi; Huang, Zhongbing; Yin, Guangfu; Wang, Lei; Gao, Fabao

2016-03-15

Ln-based complexes can be used as T1-enhanced contrast agents of magnetic resonance (MR) imaging in clinical field. Herein, we present a facile and feasible biomineralization process to fabricate Gd/Eu-codoped SmPO4 nanorods (NRs) with silk fibroin (SF) peptides (codoped SF-NRs) as T1-enhanced contrast agents, which possess paramagnetic property, photoluminescence (PL), better cyto-/tissue-compatibility and longer half-life in blood due to SF coating on their surface. Their bio-distributions in TB-N mice via tail-vein injection indicated that, although SF-NRs could be safely cleared away through renal and fecal excretion, SF-NRs easily permeated and aggregated in tumors. The results of in vitro MR imaging demonstrate that the longitudinal relaxivity r1 value of codoped SF-NRs (0.31 Sm-Gd mM(-1) s(-1)) is not only significantly higher than those of Gd-doped and Eu-doped SmPO4 SF-NRs, but also higher than those of codoped pure NRs. The tests of in vivo T1 weighted MR imaging via intro-tumor injection and tail-vein injection confirm that, compared to the pure NRs, the codoped SF-NRs exhibited higher positive signal-enhancement ability. Furthermore, the better luminescence imaging of living cells under the fluorescence microscope (94% stronger than that of the NRs without SF). A formation mechanism of codoped SF-NRs is proposed, to explain the synergistic effect of Gd/Eu codoping and SF coating on their enhanced bio-compatibility, half-life in blood, T1-weighted MR imaging and PL imaging. Copyright © 2015 Elsevier Inc. All rights reserved.

Fabrication and characterization of a phosphosilicate YDF with high Yb absorbance and low background loss

NASA Astrophysics Data System (ADS)

Kim, Seong-Jin; Hujimaki, Yosuke; Taniguchi, Hirokazu; Kinoshita, Hiroaki; Sato, Kenji

2014-03-01

In this paper, we report fabrication and investigation of ytterbium-doped phosphorsilicate fiber (P co-doped YDF) with high Yb content, low numerical aperture, and low background loss. The P co-doped YDF is fabricated by MCVD using the vapor sources of Yb, SiCl4, AlCl3, and POCl3, and by the gas-phase doping method. The optical properties of this P co-doped YDF are compared with Al co-doped and Al:P co-doped YDFs with low background losses. The minimum background loss of the P co-doped YDF in the spectral range from 1100 to 1380 nm is as low as ~3 dB/km. This is nearly independent of the Yb and P contents because soot deposition and collapsing conditions are properly optimized (i.e., the P co-doped YDF from a non-optimized process shows a few hundred dB/km). The excess loss induced by PD, for the P co-doped YDF, was dramatically reduced compared to both Al co-doped and Al:P co-doped YDFs. The optical slope efficiency of the P co-doped YDF is about 80%, depending on the pumping wavelength and fiber length. The fiber colors during pumping are blue for both the P co-doped and Al:P co-doped YDFs. Based on the results from a prolonged test, the output power of the P co-doped YDF is highly stable, with an initial degradation of 2-3%; which demonstrate improvement in PD resistivity with P incorporation into the glass, compared to the Al:P co-doped YDF with degradation above 6%.

One-dimensional ZnO nanostructures.

PubMed

Jayadevan, K P; Tseng, T Y

2012-06-01

The wide-gap semiconductor ZnO with nanostructures such as nanoparticle, nanorod, nanowire, nanobelt, nanotube has high potential for a variety of applications. This article reviews the fundamentals of one-dimensional ZnO nanostructures, including processing, structure, property, application and their processing-microstructure-property correlation. Various fabrication methods of the ZnO nanostructures including vapor-liquid-solid process, vapor-solid growth, solution growth, solvothermal growth, template-assisted growth and self-assembly are introduced. The characterization and properties of the ZnO nanostructures are described. The possible applications of these nanostructures are also discussed.

Effect of Surfactant on the Morphology of ZnO/Al:ZnO Nanostructures and Their Ethanol Sensing Applications at Room Temperature

NASA Astrophysics Data System (ADS)

Chitra, M.; Uthayarani, K.; Rajasekaran, N.; Neelakandeswari, N.; Girija, E. K.; Padiyan, D. Pathinettam

2016-11-01

Zinc oxide (ZnO) and aluminum (Al) doped ZnO nanostructures with and without surfactant have been successfully prepared via sol-gel route. The effect of the surfactant glyoxalic acid and various concentration of Al on the structural property of ZnO was analyzed by X-ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR). The morphology of the samples was recorded using field emission scanning electron microscopy. The uniform distribution of ZnO nanostructures with hexagonal facets is facilitated by the surfactant and the grain growth is further inhibited by the increase in concentration of Al. The ethanol (0-300ppm) sensing characteristics of the as-prepared samples were systematically investigated at room temperature. Surfactant-assisted ZnO/Al:ZnO nanostructures show higher sensitivity of 94% at room temperature than ZnO/Al:ZnO nanostructures without surfactant. Faster response at 68s and recovery at 50s is also achieved by the samples. The surfactant-assisted ZnO nanostructures exhibit sharp selective detection towards ethanol when compared to the samples without surfactant. The enhanced ethanol sensing property may be ascribed to the larger surface area which is due to uniform and smaller crystallite size of the surfactant-assisted sample.

Mo and P co-doped Ba5Ta4O15 for hydrogen evolution under solar light

NASA Astrophysics Data System (ADS)

Li, Songjie; Cao, Wenbo; Wang, Chengduo; Du, Xueshan; Lu, Shufen

2018-07-01

Based on density functional calculations, Mo and P co-doped Ba5Ta4O15 compared with their mono-doping was studied for splitting water. The results showed that Mo-P co-doping significantly reduced the energy gap of Ba5Ta4O15 from 4.05 eV to 2.15 eV, being almost the optimum value for utilizing solar energy as much as possible. The top of valence band and the bottom of conduction band are both compatible with the oxidation-reduction potentials of water. More importantly, Mo-P co-doping prevents the filled spin-down states of Mo and the empty spin-down states of P from arising due to the charge compensation of Mo-P pairs. We propose that Mo-P co-doped Ba5Ta4O15 is one of the most promising photocatalyst candidates for solar water splitting.

Effect of aging on ZnO and nitrogen doped P-Type ZnO

NASA Astrophysics Data System (ADS)

Majumdar, Sayanee; Bhunia, S.

2012-06-01

The withholding of p-type conductivity in as-prepared and 3% nitrogen (N) doped zinc oxide (ZnO) even after 2 months of preparation was systematically studied. The films were grown on glass substrates by pulsed laser deposition (PLD) at 350 °C under different conditions, viz. under vacuum and at oxygen (O) ambience using 2000 laser pulses. In O ambience for as-prepared ZnO the carrier concentration reduces and mobility increases with increasing number of laser shots. The resistivity of as-prepared and 3% N-doped ZnO is found to increase with reduction in hole concentration after 60 days of aging while maintaining its p-type conductivity irrespective of growth condition. AFM and electrical properties showed aging effect on the doped and undoped samples. For as-prepared ZnO, with time, O migration makes the film high resistive by reducing free electron concentrations. But for N-doped p-type ZnO, O-migration, metastable N and hydrogen atom present in the source induced instability in structure makes it less conducting p-type.

(Indium, Aluminum) co-doped Zinc Oxide as a Novel Material System for Quantum-Well Multilayer Thermoelectrics

NASA Astrophysics Data System (ADS)

Teehan, Sean

Waste heat recovery from low efficiency industrial processes requires high performance thermoelectric materials to meet challenging requirements. The efficiency such a device is quantified by the dimensionless figure of merit ZT=S2sigmaT/kappa, where S is the Seebeck coefficient, sigma is the electrical conductivity, T is the absolute temperature and kappa is the thermal conductivity. For practical applications these devices are only cost-effective if the ZT is higher than 2. Theoretically it has been proven that by engineering nanostructures with lower dimensionality one can significantly increase ZT. A superlattice, or a system of 2-dimensional multilayer quantum wells has previously shown the potential to be used for thermoelectric structures. However, the use of conventional materials within these structures has only allowed this at low temperatures and has utilized cross-plane transport. This study focuses on both high temperature range operation and the in-plane transport properties of such structures, which benefit from both quantum confinement and an enhancement in density of states near EF. The n-type structures are fabricated by alternately sputtering barrier and well materials of Al-doped ZnO (AZO) and indium co-doped AZO, respectively. Samples investigated consist of 50 periods with targeted layer thicknesses of 10nm, which results in sufficient sampling material as well as quantum well effects. The indium doping level within the quantum well was controlled by varying the target power, and ultimately results in a 3x improvement in power factor (S 2sigma) over the parent bulk materials. The film characterization was determined by X-ray reflectometry, transmission electron microscopy, X-ray diffraction, auger electron spectroscopy, as well as other relevant techniques. In addition, process optimization was performed on material parameters such as layer thickness, interface roughness, and band-gap offset which all play a major role in determining the

Evolution of crystal structure during the initial stages of ZnO atomic layer deposition

DOE PAGES

Boichot, R.; Tian, L.; Richard, M. -I.; ...

2016-01-05

In this study, a complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore, by comparing ZnO growth on silicon with a native oxide with that on Al 2O 3(001), we find that even with lattice-mismatched substrates and low deposition temperatures, the crystalline texture of the films depend strongly on the nature of the interfacial bonds.

Multimodal emissions from Tb{sup 3+}/Yb{sup 3+} co-doped lithium borate glass: Upconversion, downshifting and quantum cutting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bahadur, A.; Yadav, R.S.; Yadav, R.V.

This paper reports the optical properties of Tb{sup 3+}/Yb{sup 3+} co-doped lithium borate (LB) glass prepared by melt quench method. The absorption spectrum of the Yb{sup 3+} doped LB glass contains intense NIR band centered at 976 nm due to {sup 2}F{sub 7/2}→{sup 2}F{sub 5/2} transition. The emission spectra of the prepared glasses have been monitored on excitation with 266, 355 and 976 nm. The Yb{sup 3+} doped glass emits a broad NIR band centered at 976 nm whereas the Tb{sup 3+} doped glass gives off visible bands on excitations with 266 and 355 nm. When the Tb{sup 3+} andmore » Yb{sup 3+} ions are co-doped together, the emission intensity in the visible region decreases whereas it increases in the NIR region significantly. The increase in the emission intensity in the NIR region is due to efficient cooperative energy transfer (CET) from Tb{sup 3+} to Yb{sup 3+} ions. The quantum cutting efficiency for Tb{sup 3+}/Yb{sup 3+} co-doped glass has been calculated and compared for 266 and 355 nm excitations. The quantum cutting efficiency is larger for 355 nm excitation (137%). The Tb{sup 3+}/Yb{sup 3+} co-doped LB glass also emits upconverted visible bands on excitation with 976 nm. The mechanisms involved in the energy transfer have been discussed using schematic energy level diagram. The Tb{sup 3+}/Yb{sup 3+} co-doped LB glass may be used in the optical devices and in solar cell for solar spectral conversion and behaves as a multi-modal photo-luminescent material. - Graphical abstract: The Tb{sup 3+}/Yb{sup 3+} co-doped lithium borate (LB) glass prepared by melt quench method emits upconverted visible emissions through upconversion CET from Yb{sup 3+} to Tb{sup 3+} ions and quantum cutting emissions through downconversion CET from Tb{sup 3+} to Yb{sup 3+} ions. Therefore, the Tb{sup 3+}/Yb{sup 3+} co-doped LB glass may find applications in optical devices and solar cell and behaves as a multi-modal photo-luminescent material. - Highlights: • The Tb{sup 3

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles.

PubMed

Ibupoto, Zafar Hussain; Khun, Kimleang; Eriksson, Martin; AlSalhi, Mohammad; Atif, Muhammad; Ansari, Anees; Willander, Magnus

2013-08-19

Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c -axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles

PubMed Central

Ibupoto, Zafar Hussain; Khun, Kimleang; Eriksson, Martin; AlSalhi, Mohammad; Atif, Muhammad; Ansari, Anees; Willander, Magnus

2013-01-01

Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role. PMID:28811454

InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer

NASA Astrophysics Data System (ADS)

Kong, Bo Hyun; Cho, Hyung Koun; Kim, Mi Yang; Choi, Rak Jun; Kim, Bae Kyun

2011-07-01

For the fabrication of InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) showing large area emission, transparent Al-doped ZnO (AZO) films grown by atomic layer deposition at relatively low temperatures were introduced as current spreading layers. These AZO films with an Al content of 3 at% showed a low electrical resistivity of <10 -3-10 -4 Ω cm, a high carrier concentration of >10 20 cm -3, and an excellent optical transmittance of ˜85%, in spite of the low growth temperature. The deposition of the AZO film induced an intense blue emission from the whole surface of the p-GaN and weak ultraviolet emission from the n-AZO and p-GaN junction. At an injection current of 50 mA, the output powers of the blue LEDs were 1760 and 1440 mcd for the samples with AZO thicknesses of 100 and 300 nm, respectively.

Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition.

PubMed

Daubert, James S; Hill, Grant T; Gotsch, Hannah N; Gremaud, Antoine P; Ovental, Jennifer S; Williams, Philip S; Oldham, Christopher J; Parsons, Gregory N

2017-02-01

Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of Al 2 O 3 , TiO 2 , ZnO, HfO 2 , and ZrO 2 were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of Al 2 O 3 or HfO 2 provided the highest level of initial corrosion protection, but films of HfO 2 exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO 2 or ZrO 2 produced with ALD for corrosion protection, and both are promising materials for corrosion protection.

Physical mechanism of resistance switching in the co-doped RRAM

NASA Astrophysics Data System (ADS)

Yang, Jin; Dai, Yuehua; Lu, Shibin; Jiang, Xianwei; Wang, Feifei; Chen, Junning

2017-01-01

The physical mechanism of the resistance switching for RRAM with co-doped defects (Ag and oxygen vacancy) is studied based on the first principle calculations and the simulation tool VASP. The interaction energy, formation energy and density of states of Ag and oxygen vacancy defect (VO) are calculated. The calculated results reveal that the co-doped system is more stable than the system only doped either Ag or VO defect and the impurity energy levels in the band gap are contributed by Ag and VO defects. The obtained partial charge density confirmed further that the clusters are obvious in the direction of Ag to Hf ions, which means that it is Ag but VO plays a role of conductive paths. For the formation mechanism, the modified electron affinity and the partial charge density difference are calculated. The results show that the ability of electron donors of Ag is stronger than VO In conclusion, the conductivity of the physical mechanism of resistance switching in the co-doped system mainly depends on the doped Ag. Project supported by the National Natural Science Foundation of China (No. 61376106), the Research Foundation of Education Bureau of Anhui Province, China (Nos. KJ2015A276, KJ2016A574, KJ2014A208), and the Special Foundation for Young Scientists of Hefei Normal University (No. 2015rcjj02).

Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kovacs, Andras; Ney, A.; Duchamp, Martial

2013-12-23

We have studied planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al2O3) and the Co:ZnO/Al2O3 interface structure at atomic resolution using aberration-corrected transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). Comparing Co:ZnO samples deposited by pulsed laser deposition and reactive magnetron sputtering, both exhibit extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 3-4 Co:ZnO layers at the interface.. In addition, we have measured the local strain which reveals the lattice distortion around the stacking faults.

Miniaturized accelerometer made with ZnO nanowires

NASA Astrophysics Data System (ADS)

Song, Sangho; Kim, Jeong Woong; Kim, Hyun Chan; Yun, Youngmin; Kim, Jaehwan

2017-04-01

Miniaturized accelerometer is required in many applications, such as, robotics, haptic devices, gyroscopes, simulators and mobile devices. ZnO is an essential semiconductor material with wide direct band gap, thermal stability and piezoelectricity. Especially, well aligned ZnO nanowire is appropriate for piezoelectric applications since it can produce high electrical signal under mechanical load. To miniaturize accelerometer, an aligned ZnO nanowire is adopted to implement active piezoelectric layer of the accelerometer and copper is chosen for the head mass. To grow ZnO nanowire on the copper head mass, hydrothermal synthesis is conducted and the effect of ZnO nanowire length on the accelerometer performance is investigated. Refresh hydrothermal synthesis can increase the length of ZnO nanowire. The performance of the fabricated ZnO accelerometers is compared with a commercial accelerometer. Sensitivity and linearity of the fabricated accelerometers are investigated.

Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters.

PubMed

Jeong, Yong Jin; An, Tae Kyu; Yun, Dong-Jin; Kim, Lae Ho; Park, Seonuk; Kim, Yebyeol; Nam, Sooji; Lee, Keun Hyung; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

2016-03-02

Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs.

A first principles study of the properties of Al:ZnO and its adhesion to Ag in an optical coating

NASA Astrophysics Data System (ADS)

Lin, Zheshuai; Bristowe, Paul D.

2009-07-01

A first principles density functional study of the atomistic properties of Al:ZnO and its adhesion to Ag is presented. Optical coatings often contain interfaces between ZnO (0001) and Ag (111) layers whose bonding can be improved by incorporating small amounts of Al into the ZnO but the underlying strengthening mechanism remains unclear. It is assumed that Al relaxes the internal compressive stress in the film but the situation is complicated by the presence of hydrogen and/or water which can adsorb on the ZnO surface during fabrication of the coating. Hydrogen and/or water are known to weaken the Ag/ZnO interface particularly when it is O terminated. In this paper it is shown that aluminum substitutes on Zn sites in ZnO and this does indeed reduce the internal stress in the layer under compression. However, it is also shown that Al segregates to the ZnO surface when it is O terminated (but not Zn terminated) and this reduces the propensity for hydrogen adsorption. Thus by eliminating some of the hydrogen from the ZnO surface which is more likely to be O terminated than Zn terminated under ambient conditions, the strength of the Ag/ZnO interface can be increased. The effect of aluminum incorporation into the ZnO layer is therefore twofold: it relaxes the residual stresses in the coating and also improves the chemical bonding at the metal/oxide interface by removing the weakening effects of gaseous adsorption. The changes in interfacial bonding are explained in terms of an electron redistribution and compensation model.

Enhanced Electrical Activation in In-Implanted Si 0.35Ge 0.65 by C Co-Doping

DOE PAGES

Feng, Ruixing; Kremer, Felipe; Sprouster, David J.; ...

2016-04-21

In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si 0.35Ge 0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C+In co-doping, the solid solubility of In in Si 0.35Ge 0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in themore » co-doped samples.« less

Preparation, structural, photoluminescence and magnetic studies of Cu doped ZnO nanoparticles co-doped with Ni by sol-gel method

NASA Astrophysics Data System (ADS)

Theyvaraju, D.; Muthukumaran, S.

2015-11-01

Zn0.96-xNi0.04CuxO nanoparticles have been synthesized by varying different Cu concentrations between 0% and 4% using simple sol-gel method. X-ray diffraction studies confirmed the hexagonal structure of the prepared samples. The formation of secondary phases, CuO (111) and Zn (101) at higher Cu content is due un-reacted Cu2+ and Zn2+ ions present in the solution which reduces the interaction between precursor ions and surfaces of ZnO. Well agglomerated and rod-like structure noticed at Cu=4% greatly de-generate and enhanced the particle size. The nominal elemental composition of Zn, Cu, Ni and O was confirmed by energy dispersive X-ray analysis. Even though energy gap was increased (blue-shift) from Cu=0-2% by quantum size effect, the s-d and p-d exchange interactions between the band electrons of ZnO and localized d electrons of Cu and Ni led to decrease (red-shift) the energy gap at Cu=4%. Presence of Zn-Ni-Cu-O bond was confirmed by Fourier transform infrared analysis. Ultraviolet emission by band to band electronic transition and defect related blue emission were discussed by photoluminescence spectra. The observed optical properties concluded that the doping of Cu in the present system is useful to tune the emission wavelength and hence acting as the important candidates for the optoelectronic device applications. Ferromagnetic ordering of Cu=2% sample was enhanced by charge carrier concentration where as the antiferromagnetic interaction between neighboring Cu-Cu ions suppressed the ferromagnetism at higher doping concentrations of Cu.

Enhancement of luminescence emission from GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} phosphor by Li{sup +} co-doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gavrilović, Tamara V.; Jovanović, Dragana J., E-mail: draganaj@vinca.rs; Lojpur, Vesna M.

2014-09-15

This paper demonstrates the effects of Li{sup +} co-doping on the structure, morphology, and luminescence properties of GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} phosphor prepared using a high-temperature solid-state chemistry method. The GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} powders synthesized with the Li{sup +} co-dopant (in concentrations of 0, 5, 10, and 15 mol%) are characterized by X-ray powder diffraction, scanning electron microscopy, and photoluminescence spectroscopy. Structural analysis showed that powders co-doped with Li{sup +} have larger crystallite sizes and slightly smaller crystal lattice parameters than powders prepared without Li{sup +} ions. Photoluminescence down-conversion (345-nm excitation) and up-conversion (980-nm excitation) spectra show characteristic Er{supmore » 3+} emissions, with the most intense bands peaking at 525 nm ({sup 2}H{sub 11/2}→{sup 4}I{sub 15/2} transition) and 552 nm ({sup 4}S{sub 3/2}→{sup 4}I{sub 15/2}). The intensity of up-conversion emission from GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} is enhanced (by a factor of four) by co-doping with 5 mol% of Li{sup +} ions. The mechanisms responsible for this emission enhancement are discussed. - Graphical abstract: UC emission spectra for GdVO{sub 4}:1.5-mol% Er{sup 3+}/20-mol% Yb{sup 3+} powders co-doped with different concentrations of Li{sup +} ions, recorded under 980-nm excitation. - Highlights: • 5-mol% Li{sup +} co-doped powders have 400% enhanced up-conversion emission intensity. • 15-mol% Li{sup +} co-doping produces 40% higher emission in down-conversion. • Li{sup +} co-doped powders have larger crystallite size and smaller lattice parameters.« less

Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

NASA Astrophysics Data System (ADS)

Yang, W. F.; Liu, Z. G.; Xie, Y. N.; Cai, J. F.; Liu, S.; Gong, H.; Wu, Z. Y.

2012-06-01

This letter presents a holographic photonic crystal (H-PhC) Al-doped ZnO (AZO) transparent Ohmic contact layer on p-GaN to increase the light output of GaN-based LEDs without destroying the p-GaN. The operating voltage of the PhC LEDs at 20 mA was almost the same as that of the typical planar AZO LEDs. While the resultant PhC LED devices exhibited significant improvements in light extraction, up to 1.22 times that of planar AZO LEDs without PhC integration. Temperature dependence of the integrated photoluminescence intensity indicates that this improvement can be attributed to the increased extraction efficiency due to the surface modification. These results demonstrate that the surface-treated AZO layer by H-PhCs is suitable for fabricating high-brightness GaN-based LEDs.

Flower-like ZnO nanorod arrays grown on HF-etched Si (111): constraining relation between ZnO seed layer and Si (111)

NASA Astrophysics Data System (ADS)

Brahma, Sanjaya; Liu, C.-W.; Huang, R.-J.; Chang, S.-J.; Lo, K.-Y.

2015-11-01

We demonstrate the formation of self-assembled homogenous flower-like ZnO nanorods over a ZnO seed layer deposited on a HF-etched Si (111) substrate. The typical flower-like morphology of ZnO nanorod arrays is ascribed to the formation of the island-like seed layer which is deposited by the drop method followed by annealing at 300 °C. The island-like ZnO seed layer consists of larger ZnO grains, and is built by constraining of the Si (111) surface due to pattern matching. Pattern matching of Si with ZnO determines the shape and size of the seed layer and this controls the final morphology of ZnO nanorods to be either flower like or vertically aligned. The high quality of the island-like ZnO seed layer enhances the diameter and length of ZnO nanorods. Besides, while the amorphous layer formed during the annealing process would influence the strained ZnO grain, that subsequent amorphous layer will not block the constraining between the ZnO grain and the substrate.

First-principles study of codoping in lanthanum bromide

NASA Astrophysics Data System (ADS)

Erhart, Paul; Sadigh, Babak; Schleife, André; Åberg, Daniel

2015-04-01

Codoping of Ce-doped LaBr3 with Ba, Ca, or Sr improves the energy resolution that can be achieved by radiation detectors based on these materials. Here, we present a mechanism that rationalizes this enhancement on the basis of first-principles electronic structure calculations and point defect thermodynamics. It is shown that incorporation of Sr creates neutral VBr-SrLa complexes that can temporarily trap electrons. As a result, Auger quenching of free carriers is reduced, allowing for a more linear, albeit slower, scintillation light yield response. Experimental Stokes shifts can be related to different CeLa-SrLa-VBr triple complex configurations. Codoping with other alkaline as well as alkaline-earth metals is considered as well. Alkaline elements are found to have extremely small solubilities on the order of 0.1 ppm and below at 1000 K. Among the alkaline-earth metals the lighter dopant atoms prefer interstitial-like positions and create strong scattering centers, which has a detrimental impact on carrier mobilities. Only the heavier alkaline-earth elements (Ca, Sr, Ba) combine matching ionic radii with sufficiently high solubilities. This provides a rationale for the experimental finding that improved scintillator performance is exclusively achieved using Sr, Ca, or Ba. The present mechanism demonstrates that codoping of wide-gap materials can provide an efficient means for managing charge carrier populations under out-of-equilibrium conditions. In the present case dopants are introduced that manipulate not only the concentrations but also the electronic properties of intrinsic defects without introducing additional gap levels. This leads to the availability of shallow electron traps that can temporarily localize charge carriers, effectively deactivating carrier-carrier recombination channels. The principles of this mechanism are therefore not specific to the material considered here but can be adapted for controlling charge carrier populations and

Cationic (V, Y)-codoped TiO2 with enhanced visible light induced photocatalytic activity: A combined experimental and theoretical study

NASA Astrophysics Data System (ADS)

Khan, Matiullah; Cao, Wenbin

2013-11-01

To employ TiO2 as an efficient photocatalyst, high reactivity under visible light and improved separation of photoexcited carriers are required. An effective co-doping approach is applied to modify the photocatalytic properties of TiO2 by doping vanadium (transition metal) and yttrium (rare earth element). V and/or Y codoped TiO2 was prepared using hydrothermal method without any post calcination for crystallization. Based on density functional theory, compensated and noncompensated V, Y codoped TiO2 models were constructed and their structural, electronic, and optical properties were calculated. Through combined experimental characterization and theoretical modeling, V, Y codoped TiO2 exhibited high absorption coefficient with enhanced visible light absorption. All the prepared samples showed pure anatase phase and spherical morphology with uniform particle distribution. Electronic band structure demonstrates that V, Y codoping drastically reduced the band gap of TiO2. It is found that both the doped V and Y exist in the form of substitutional point defects replacing Ti atom in the lattice. The photocatalytic activity, evaluated by the degradation of methyl orange, displays that the codoped TiO2 sample exhibits enhanced visible light photocatalytic activity. The synergistic effects of V and Y drastically improved the Brunauer-Emmett-Teller specific surface area, visible light absorption, and electron-hole pair's separation leading to the enhanced visible light catalytic activity.

Acceptors in ZnO

DOE PAGES

Mccluskey, Matthew D.; Corolewski, Caleb; Lv, Jinpeng; ...

2015-03-21

Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence shows that these point defects have acceptor levels 3.2, 1.5, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO2 contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peakmore » in ZnO nanocrystals has been attributed to an acceptor, which may involve a zinc vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g = 2.0033 and g = 2.0075, along with an isotropic center at g = 2.0053.« less

Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Takagi, Yasufumi; Suwa, Takanobu; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

2011-10-01

The effect of Mg codoping on the Eu3+ luminescence in GaN was investigated by photoluminescence measurements. Two notable emission peaks associated with the 5D0→7F2 transition in the Eu3+ ions were governed by Mg codopants, which corresponded to the change of the dominant peak wavelength from 622.3 to 620.3 nm with an increase in Mg concentration. An optimal amount of Mg also led to enhancement of approximately 20 times of the Eu3+ luminescence. These results indicated that the Mg codopants selectively activated the optical site of 620.3 nm emission due to the elimination of nonradiative deexcitation paths from the 5D0 state.

Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer.

PubMed

Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

2009-05-13

The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

N doped ZnO and ZnO nanorods based p-n homojunction fabricated by ion implantation

NASA Astrophysics Data System (ADS)

Chakraborty, Mohua; Thangavel, R.; Asokan, K.

2018-05-01

Nitrogen (N) doped and undoped Zinc Oxide (ZnO) nanorod p-n homojunctions were fabricated by ion implantation method. The structural and optical characterizations showed that the N atoms doped into the ZnO crystal lattice. The UV-Vis absorption spectra revealed shift in optical absorption edge towards higher wavelength with ion implantation on ZnO, which attributed N acceptor levels above the valence band. The current-voltage (I-V) measurements exhibit a typical semiconductor rectification characteristic indicating the electrical conductivity of the N-doped ZnO nanorod have p-type conductivity. Moreover, a high photocurrent response has been observed with these p-n homojunctions.

Electronic coupling induced high performance of N, S-codoped graphene supported CoS2 nanoparticles for catalytic reduction and evolution of oxygen

NASA Astrophysics Data System (ADS)

Chen, Bohong; Jiang, Zhongqing; Zhou, Lingshan; Deng, Binglu; Jiang, Zhong-Jie; Huang, Jianlin; Liu, Meilin

2018-06-01

A simple synthetic method is developed for the synthesis of CoS2/N, S-codoped graphene. The result shows the existence of a strong electronic coupling between CoS2 and N, S-codoped graphene. The pyrrolic and pyridinic type nitrogen and S in the form of C-S-C in N, S-codoped graphene are found to be the anchoring sites of the CoS2 nanoparticles. As a bifunctional catalyst, the CoS2/N, S-codoped graphene exhibits an oxygen reduction onset potential of 0.963 V vs. RHE and delivers an oxygen evolution overpotential of 393 mV at the current density of 10 mA cm-2. Its oxygen reduction and evolution catalytic activities are comparable to those of the Pt/C and the state-of-art RuO2/C, respectively. Most impressively, the CoS2/N, S-codoped graphene exhibits a potential gap of 771 mV. This value is lower than those of most bifuntional catalysts reported, clearly indicating its potential use as the bifunctional catalyst to replace the noble-metal based catalysts for practical applications. Additionally, our results also suggest a great importance to prepare a single pure phase CoS2 in improving the catalytic bifunctionality of the CoS2/N, S-codoped graphene. The primary Zn-air battery with CoS2/N, S-codoped graphene shows a higher discharge peak power density than that with Pt/C.

Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiong, Wen, E-mail: wenxiong@cqu.edu.cn; Chen, Wensuo

2013-12-21

The electronic structure of Mn and Co-doped CdSe nanowires are calculated based on the six-band k·p effective-mass theory. Through the calculation, it is found that the splitting energies of the degenerate hole states in Mn-doped CdSe nanowires are larger than that in Co-doped CdSe nanowires when the concentration of these two kinds of magnetic ions is the same. In order to analysis the magneto-optical spectrum of Mn and Co-doped CdSe nanowires, the four lowest electron states and the four highest hole states are sorted when the magnetic field is applied, and the 10 lowest optical transitions between the conduction subbandsmore » and the valence subbands at the Γ point in Mn and Co-doped CdSe nanowires are shown in the paper, it is found that the order of the optical transitions at the Γ point almost do not change although two different kinds of magnetic ions are doped in CdSe nanowires. Finally, the effective excitonic Zeeman splitting energies at the Γ point are found to increase almost linearly with the increase of the concentration of the magnetic ions and the magnetic field; meanwhile, the giant positive effective excitonic g factors in Mn and Co-doped CdSe nanowires are predicted based on our theoretical calculation.« less

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Fabrication and characterization of SnO2/ZnO gas sensors for detecting toluene gas.

PubMed

Min, Byung-Sam; Park, Young-Ho; Lee, Chang-Seop

2014-11-01

This study investigates the use of SnO2, ZnO, Ag, Au, Cu, In, Pd, Ru and carbon black to improve the sensitivity of a gas sensor for detecting toluene gas. Metal-SnO2/ZnO thick films were screen-printed onto Al2O3 substrates with platinum electrodes. The physico-chemical properties of the sensor materials were characterized using SEM/EDS, XRD, and BET analyses. Measuring the electrical resistance of each sensor as a function of the gas concentration determined the sensing characteristics. The sensors were tested using toluene, benzene, xylene, ethanol, methanol, ammonia and trimethylamine vapors with concentrations of 1-2000 ppm. The gas sensing properties of metal-SnO2/ZnO thick films depended on the content and variety of metals and the content of carbon black. The optimum condition of sensor material for toluene gas detection is operation temperature 300 degrees C and when metal catalyst Cu and carbon black were added. The best sensitivity and selectivity for toluene gas at 300 degrees C resulted from doping with 5 wt.% carbon black, 1 wt.% Cu and 20 wt.% ZnO to SnO2.

Effects of surface morphology of ZnO seed layers on growth of ZnO nanostructures prepared by hydrothermal method and annealing.

PubMed

Yim, Kwang Gug; Kim, Min Su; Leem, Jae-Young

2013-05-01

ZnO nanostructures were grown on Si (111) substrates by a hydrothermal method. Prior to growing the ZnO nanostructures, ZnO seed layers with different post-heat temperatures were prepared by a spin-coating process. Then, the ZnO nanostructures were annealed at 500 degrees C for 20 min under an Ar atmosphere. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out at room temperature (RT) to investigate the structural and optical properties of the as-grown and annealed ZnO nanostructures. The surface morphologies of the seed layers changed from a smooth surface to a mountain chain-like structure as the post-heating temperatures increased. The as-grown and annealed ZnO nanostructures exhibited a strong (002) diffraction peak. Compared to the as-grown ZnO nanostructures, the annealed ZnO nanostructures exhibited significantly strong enhancement in the PL intensity ratio by almost a factor of 2.

Spin noise spectroscopy of donor-bound electrons in ZnO

NASA Astrophysics Data System (ADS)

Horn, H.; Balocchi, A.; Marie, X.; Bakin, A.; Waag, A.; Oestreich, M.; Hübner, J.

2013-01-01

We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nuclear spins of the naturally occurring 67Zn isotope. We measure a typical spin dephasing time of 23 ns, in agreement with the expected theoretical values. On the other hand, we measure a third, very high spin dephasing rate which is attributed to a high defect density of the investigated ZnO material. Measurements of the spin dynamics under the influence of transverse as well as longitudinal external magnetic fields unambiguously reveal the intriguing connections of the electron spin with its nuclear and structural environment.

1-D and 2-D morphology of metal cation co-doped (Zn, Mn) TiO2 and investigation of their photocatalytic activity

NASA Astrophysics Data System (ADS)

Benjwal, Poonam; De, Bibekananda; Kar, Kamal K.

2018-01-01

Morphology and electronic bandgap of titania (TiO2) are considered to be the primary factors for determining the photocatalytic efficiency, as they determine the number of active sites for the photocatalytic reactions. In the present study, two different morphologies of TiO2 (nanosphere and nanorod) with varying Zn and Mn co-doping were synthesized by solvothermal and hydrothermal methods to examine their photocatalytic efficiency by methylene blue degradation. The co-doped photocatalysts were characterized by XRD, XPS, SEM, TEM, Raman, FTIR and UV-vis DRS. Further, a comparison has been made with co-doped TiO2 nanospheres and TiO2 nanorods, where Zn, Mn co-doped TiO2 nanorods show higher photocatalytic activity compared to nanospheres. This higher photocatalytic activity of co-doped TiO2 is attributed to its polymorphic phases, as they act as heterojunctions for TiO2. Further, being 1-D nanostructure, the TiO2 nanorods exhibit the straight diffusion path for charge carriers, which reduces the recombination possibilities. The obtained results suggest that the photocatalysis efficiency of TiO2 can be significantly enhanced by tailoring the shape and co-doping concentration, which enforce a new concept for developing the new nanostructures of TiO2.

Acceptors in ZnO nanocrystals: A reinterpretation

NASA Astrophysics Data System (ADS)

Gehlhoff, W.; Hoffmann, A.

2012-12-01

In a recent article, Teklemichael et al. reported on the identification of an uncompensated acceptor in ZnO nanocrystals using infrared spectroscopy and electron paramagnetic resonance (EPR) in the dark and under illumination. Most of their conclusions, interpretations, and suggestions turned out to be erroneous. The observed EPR signals were interpreted to originate from axial and nonaxial VZn-H defects. We show that the given interpretation of the EPR results is based on misinterpretations of EPR spectra arising from defects in nanocrystals. The explanation of the infrared absorption lines is in conflict with recent results of valence band ordering and valence band splitting.

Temperature dependence of the A, B, and C excitons in ZnO over 5-400 K: A modulated reflectivity study.

NASA Astrophysics Data System (ADS)

Tsoi, S.; Cardona, M.; Lauck, R.; Alawadhi, H.; Lu, X.; Grimsditch, M.; Ramdas, A. K.

2005-03-01

Optical properties of ZnO, a wide gap semiconductor with wurtzite structure, have generated renewed interest in the material in the context of opto-electronic phenomena and applications. The A, B, and C excitons of ZnO, arising from the combined effects of crystal field and spin-orbit splittings of the valence band, are investigated in the temperature range 5- 400 K, exploiting electro-, photo-, and wavelength-modulated reflectivity. The specimens studied have natural isotopic composition. The temperature dependence of the A, B, and C excitonic band gaps, fitted with a two harmonic oscillator modelootnotetextM. Cardona, Phys. Status. Solidi b 220, 5 (2000); R. Pä'ssler, J. Appl. Phys. 89, 6235 (2001) following Manj'on et al.ootnotetextF. J. Manj'on et al., Solid State Commun. 128, 35 (2003), yields the magnitudes of the zero-point renormalizations 262 meV (A), 227 meV (B), and 249 meV (C), respectively. Isotopically controlled ZnO is currently being investigated to determine the isotopic mass dependence of the zero-point renormalizations.

Photoluminescent ZnO Nanoparticles and Their Biological Applications

PubMed Central

Zhang, Zheng-Yong; Xiong, Huan-Ming

2015-01-01

During the past decades, numerous achievements concerning luminescent zinc oxide nanoparticles (ZnO NPs) have been reported due to their improved luminescence and good biocompatibility. The photoluminescence of ZnO NPs usually contains two parts, the exciton-related ultraviolet (UV) emission and the defect-related visible emission. With respect to the visible emission, many routes have been developed to synthesize and functionalize ZnO NPs for the applications in detecting metal ions and biomolecules, biological fluorescence imaging, nonlinear multiphoton imaging, and fluorescence lifetime imaging. As the biological applications of ZnO NPs develop rapidly, the toxicity of ZnO NPs has attracted more and more attention because ZnO can produce the reactive oxygen species (ROS) and release Zn2+ ions. Just as a coin has two sides, both the drug delivery and the antibacterial effects of ZnO NPs become attractive at the same time. Hence, in this review, we will focus on the progress in the synthetic methods, luminescent properties, and biological applications of ZnO NPs.

ZnO Schottky barriers and Ohmic contacts

NASA Astrophysics Data System (ADS)

Brillson, Leonard J.; Lu, Yicheng

2011-06-01

ZnO has emerged as a promising candidate for optoelectronic and microelectronic applications, whose development requires greater understanding and control of their electronic contacts. The rapid pace of ZnO research over the past decade has yielded considerable new information on the nature of ZnO interfaces with metals. Work on ZnO contacts over the past decade has now been carried out on high quality material, nearly free from complicating factors such as impurities, morphological and native point defects. Based on the high quality bulk and thin film crystals now available, ZnO exhibits a range of systematic interface electronic structure that can be understood at the atomic scale. Here we provide a comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century. For Schottky barriers, these results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation. For ohmic contacts, these studies encompass the nature of metal-specific interactions, the role of annealing, multilayered contacts, alloyed contacts, metallization schemes for state-of-the-art contacts, and their application to n-type versus p-type ZnO. Both ZnO Schottky barriers and ohmic contacts show a wide range of phenomena and electronic behavior, which can all be directly tied to chemical and structural changes on an atomic scale.

Properties of Lu3Al5O12, Lu3Al5O12:Pr, Lu3Al5O12:Pr,Mo, and (Lu1-x Y x )3Al5O12:Pr scintillator crystals

NASA Astrophysics Data System (ADS)

Talik, E.; Kusz, J.; Guzik, A.; Szubka, M.; Balin, K.; Kisielewski, J.; Wierzchowski, W.; Malinowska, A.; Strojny-Nedza, A.; Pajaczkowska, A.; Drozdowski, W.

2017-05-01

Lattice parameters, magnetic susceptibility, electronic structure, distribution of the elements and thermal properties were examined for single crystals of Lu3Al5O12 (LuAG) and (Lu1-x Y x )3Al5O12 (LuYAG) (x  =  0.25, 0.50, 0.75), either pure or doped with Pr and optionally co-doped with Mo, which are predicted as potential fast and efficient scintillators. It was indicated that specific cage-like surrounding of rare earth and aluminum ions built from oxygen ions and proper doping can influence the thermal conductivity and the emission process. Maximum light emission (LY) was observed at praseodymium concentration about 0.3 at.%. The growth atmosphere (Ar or N2) influences the crystal quality. Additional molybdenum doping below 0.01 at% concentration increases LY.

Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

NASA Astrophysics Data System (ADS)

Samanta, Kousik

Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

Spectral Properties of Er3+/Tm3+ Co-Doped ZBLAN Glasses and Fibers

PubMed Central

Liao, Xili; Jiang, Xiaobo; Yang, Qiuhong; Wang, Longfei; Chen, Danping

2017-01-01

A series of Er3+/Tm3+ co-doped fluoride (ZBLAN) glasses and fibers was prepared and their fluorescence spectra was measured under excitation at 793 nm and 980 nm. Correlation between the self-absorption effect of rare-earth ions and the shift of the emission peak was investigated. With the increasing length of fiber, the emission peaks red-shift when self-absorption occurs at the upper level of emission transition or blue-shift when that occurs at the lower level. As a result of the strong self-absorption effect, Er3+/Tm3+ co-doped fibers mainly yield 1390–1470, 1850–1980, and 2625–2750 nm emissions when excited at 793 nm, and 1480–1580, 1800–1980, and 2625–2750 nm emissions when excited at 980 nm. Further, a broadband emission in the range of 1410–1580 nm covering the S + C communication band was obtained by the dual-pumping scheme of 793 nm and 980 nm. Results suggest that the dual-pumping scheme would be more effective and important for an Er3+/Tm3+ co-doped fiber amplifier working in the S + C communication band. PMID:28772846

Spectral Properties of Er3+/Tm3+ Co-Doped ZBLAN Glasses and Fibers.

PubMed

Liao, Xili; Jiang, Xiaobo; Yang, Qiuhong; Wang, Longfei; Chen, Danping

2017-05-03

A series of Er 3+ /Tm 3+ co-doped fluoride (ZBLAN) glasses and fibers was prepared and their fluorescence spectra was measured under excitation at 793 nm and 980 nm. Correlation between the self-absorption effect of rare-earth ions and the shift of the emission peak was investigated. With the increasing length of fiber, the emission peaks red-shift when self-absorption occurs at the upper level of emission transition or blue-shift when that occurs at the lower level. As a result of the strong self-absorption effect, Er 3+ /Tm 3+ co-doped fibers mainly yield 1390-1470, 1850-1980, and 2625-2750 nm emissions when excited at 793 nm, and 1480-1580, 1800-1980, and 2625-2750 nm emissions when excited at 980 nm. Further, a broadband emission in the range of 1410-1580 nm covering the S + C communication band was obtained by the dual-pumping scheme of 793 nm and 980 nm. Results suggest that the dual-pumping scheme would be more effective and important for an Er 3+ /Tm 3+ co-doped fiber amplifier working in the S + C communication band.

Electrical, optical and structural properties of transparent conducting Al doped ZnO (AZO) deposited by sol-gel spin coating

NASA Astrophysics Data System (ADS)

Tonny, Kaniz Naila; Rafique, Rosaleena; Sharmin, Afrina; Bashar, Muhammad Shahriar; Mahmood, Zahid Hasan

2018-06-01

Al doped ZnO (AZO) films are fabricated by using sol-gel spin coating method and changes in electrical, optical and structural properties due to variation in film thickness is studied. AZO films provide c-axis orientation along the (002) plane and peak sharpness increased with film thickness is evident from XRD analysis. Conductivity (σ) of AZO films has increased from 2.34 (Siemens/cm) to 20156.27 (Siemens/cm) whereas sheet resistance (Rsh) decreases from 606300 (ohms/sq.) to 2.08 (ohm/sq.) with increase of film thickness from 296 nm to 1030 nm. Optical transmittance (T%) of AZO films is decreased from around 82% to 62% in the visible region. And grain size (D) of AZO thin films has been found to increase from 19.59 nm to 25.25 nm with increase of film thickness. Figure of Merit is also calculated for prepared sample of AZO. Among these four sample of AZO thin films, L-15 sample (having thickness in 895 nm) has provided highest figure of merit which is 5.49*10^-4 (Ω-1).

Trioctylphosphine-assisted morphology control of ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Hong, Yun-Kun; Cho, GeonHee; Park, YoonSu; Oh, Soong Ju; Ha, Don-Hyung

2018-06-01

This study investigates the morphological change in colloidal ZnO nanoparticles (NPs) synthesized with trioctylphosphine (TOP). The addition of TOP to the synthesis causes an evolution in the shape of ZnO NPs to tadpole-like particles from quasi-spherical particles at 300 °C. The total length of the tadpole-like ZnO NPs can be modified by controlling the molar ratio of TOP to oleylamine (OLAM). The tadpole-like particles are elongated as the concentration of TOP increased but decreased when the addition of TOP is excessive. These tadpole-like ZnO NPs transform to quasi-spherical NPs regardless of the amount of TOP at a reaction time of 3 h at 300 °C. At 200 °C, the effect of TOP on the ZnO NP synthesis differs from that at 300 °C. The ZnO NPs synthesized by controlling the molar ratios of surfactant ligands (TOP:OLAM = 2:100 and 70:100) at 200 °C share similar amorphous structures, while a crystalline ZnO phase is formed when the reaction time is 3 h. X-ray photoelectron spectroscopy analysis shows that TOP influences the oxidation of ZnO and suggests that a combination of OLAM and TOP plays a role in controlling the shape of ZnO NPs. These results provide critical insights to the utilization of TOP for a shape controlling ligand in ZnO NPs and suggest a new route to design oxide NPs.

Trioctylphosphine-assisted morphology control of ZnO nanoparticles.

PubMed

Hong, Yun-Kun; Cho, GeonHee; Park, YoonSu; Oh, Soong Ju; Ha, Don-Hyung

2018-06-01

This study investigates the morphological change in colloidal ZnO nanoparticles (NPs) synthesized with trioctylphosphine (TOP). The addition of TOP to the synthesis causes an evolution in the shape of ZnO NPs to tadpole-like particles from quasi-spherical particles at 300 °C. The total length of the tadpole-like ZnO NPs can be modified by controlling the molar ratio of TOP to oleylamine (OLAM). The tadpole-like particles are elongated as the concentration of TOP increased but decreased when the addition of TOP is excessive. These tadpole-like ZnO NPs transform to quasi-spherical NPs regardless of the amount of TOP at a reaction time of 3 h at 300 °C. At 200 °C, the effect of TOP on the ZnO NP synthesis differs from that at 300 °C. The ZnO NPs synthesized by controlling the molar ratios of surfactant ligands (TOP:OLAM = 2:100 and 70:100) at 200 °C share similar amorphous structures, while a crystalline ZnO phase is formed when the reaction time is 3 h. X-ray photoelectron spectroscopy analysis shows that TOP influences the oxidation of ZnO and suggests that a combination of OLAM and TOP plays a role in controlling the shape of ZnO NPs. These results provide critical insights to the utilization of TOP for a shape controlling ligand in ZnO NPs and suggest a new route to design oxide NPs.

Synthesis of p-type ZnO films

NASA Astrophysics Data System (ADS)

Ryu, Y. R.; Zhu, S.; Look, D. C.; Wrobel, J. M.; Jeong, H. M.; White, H. W.

2000-06-01

p-Type ZnO obtained by arsenic (As) doping is reported for the first time. Arsenic-doped ZnO (ZnO : As) films have been deposited on (0 0 1)-GaAs substrates by pulsed laser ablation. The process of synthesizing p-type ZnO : As films was performed in an ambient gas of ultra-pure (99.999%) oxygen. The ambient gas pressure was 35 mTorr with the substrate temperature in the range 300-450°C. ZnO films grown at 400°C and 450°C are p-type and As is a good acceptor. The acceptor peak is located at 3.32 eV and its binding energy is about 100 meV. Acceptor concentrations of As atoms in ZnO films were in the range from high 10 17 to high 10 21 atoms/cm 3 as determined by secondary ion mass spectroscopy (SIMS) and Hall effect measurements.

ZnO Nanostructures for Tissue Engineering Applications

PubMed Central

Laurenti, Marco; Cauda, Valentina

2017-01-01

This review focuses on the most recent applications of zinc oxide (ZnO) nanostructures for tissue engineering. ZnO is one of the most investigated metal oxides, thanks to its multifunctional properties coupled with the ease of preparing various morphologies, such as nanowires, nanorods, and nanoparticles. Most ZnO applications are based on its semiconducting, catalytic and piezoelectric properties. However, several works have highlighted that ZnO nanostructures may successfully promote the growth, proliferation and differentiation of several cell lines, in combination with the rise of promising antibacterial activities. In particular, osteogenesis and angiogenesis have been effectively demonstrated in numerous cases. Such peculiarities have been observed both for pure nanostructured ZnO scaffolds as well as for three-dimensional ZnO-based hybrid composite scaffolds, fabricated by additive manufacturing technologies. Therefore, all these findings suggest that ZnO nanostructures represent a powerful tool in promoting the acceleration of diverse biological processes, finally leading to the formation of new living tissue useful for organ repair. PMID:29113133

In vitro antibacterial activity of ZnO and Nd doped ZnO nanoparticles against ESBL producing Escherichia coli and Klebsiella pneumoniae

NASA Astrophysics Data System (ADS)

Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan

2016-04-01

Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm-1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls.

Complex and oriented ZnO nanostructures.

PubMed

Tian, Zhengrong R; Voigt, James A; Liu, Jun; McKenzie, Bonnie; McDermott, Matthew J; Rodriguez, Mark A; Konishi, Hiromi; Xu, Huifang

2003-12-01

Extended and oriented nanostructures are desirable for many applications, but direct fabrication of complex nanostructures with controlled crystalline morphology, orientation and surface architectures remains a significant challenge. Here we report a low-temperature, environmentally benign, solution-based approach for the preparation of complex and oriented ZnO nanostructures, and the systematic modification of their crystal morphology. Using controlled seeded growth and citrate anions that selectively adsorb on ZnO basal planes as the structure-directing agent, we prepared large arrays of oriented ZnO nanorods with controlled aspect ratios, complex film morphologies made of oriented nanocolumns and nanoplates (remarkably similar to biomineral structures in red abalone shells) and complex bilayers showing in situ column-to-rod morphological transitions. The advantages of some of these ZnO structures for photocatalytic decompositions of volatile organic compounds were demonstrated. The novel ZnO nanostructures are expected to have great potential for sensing, catalysis, optical emission, piezoelectric transduction, and actuations.

Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes

NASA Astrophysics Data System (ADS)

Sun, Y.; Ashida, K.; Sasaki, S.; Koyama, M.; Maemoto, T.; Sasa, S.; Kasai, S.; Iñiguez-de-la-Torre, I.; González, T.

2015-10-01

Fully transparent zinc oxide (ZnO) based thin-film transistors (TFTs) and a new type of rectifiers calls self-switching nano-diodes (SSDs) were fabricated on glass substrates at room temperature by using low resistivity and transparent conducting Al- doped ZnO (AZO) thin-films. The deposition conditions of AZO thin-films were optimized with pulsed laser deposition (PLD). AZO thin-films on glass substrates were characterized and the transparency of 80% and resistivity with 1.6*10-3 Ωcm were obtained of 50 nm thickness. Transparent ZnO-TFTs were fabricated on glass substrates by using AZO thin-films as electrodes. A ZnO-TFT with 2 μm long gate device exhibits a transconductance of 400 μS/mm and an ON/OFF ratio of 2.8*107. Transparent ZnO-SSDs were also fabricated by using ZnO based materials and clear diode-like characteristics were observed.

Structural classification of RAO3( MO) n compounds ( R =Sc, In, Y, or lanthanides; A =Fe(III), Ga, Cr, or Al; M =divalent cation; n = 1-11)

NASA Astrophysics Data System (ADS)

Kimizuka, Noboru; Mohri, Takahiko

1989-01-01

A series of new compounds RAO3( MO) n ( n = 1-11) having spinel, YbFe 2O 4, or InFeO 3(ZnO) n types of structures were newly synthesized ( R =Sc, In, Y, Lu, Yb, Tm, or Er; A =Fe(III), Ga, Cr, or Al; M =Mg, Mn, Fe(II), Co, Ni, Zn, or Cd) at elevated temperatures. The conditions of synthesis and the lattice constants for these compounds are reported. The stacking sequences of the InO 1.5, (FeZn)O 2.5, and ZnO layers for InFeO 3(ZnO) 10 and the TmO 1.5, (AlZn)O 2.5, and ZnO layers for TmAlO 3(ZnO) 11 are presented, respectively. The crystal structures of the( RAO3) m( MO) n phases ( R =Sc, In, Y, or lanthanide elements; A =Fe(III), Ga, Cr, or Al; M =divalent cation elements; m and n =integer) are classified into four crystal structure types (K 2NiF 4, CaFe 2O 4, YbFe 2O 4, and spinel), based upon the constituent cations R, A, and M

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

NASA Astrophysics Data System (ADS)

Chung, S. J.; Senthil Kumar, M.; Lee, Y. S.; Suh, E.-K.; An, M. H.

2010-05-01

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Evaluation of ZnO:Al as a contact material to CdZnTe for radiation detector applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Roy, Utpal N.; Camarda, Giuseppe S.; Cui, Yonggang; Gul, Rubi; Hossain, Anwar; Yang, Ge; James, Ralph B.; Pradhan, Aswini K.; Mundle, Rajeh

2016-09-01

Aluminum (Al) doped ZnO with very high Al concentration acts as metal regarding its electrical conductivity. ZnO offers many advantages over the commonly-known metals being used today as electrode materials for nuclear detector fabrication. Often, the common metals show poor adhesion to CdZnTe or CdTe surfaces and have a tendency to peel off. In addition, there is a large mismatch of the coefficients of thermal expansion (CTE) between the metals and underlying CdZnTe, which is one of the reasons for mechanical degradation of the contact. In contrast ZnO has a close match of the CTE with CdZnTe and possesses 8-20 times higher hardness than the commonly-used metals. In this presentation, we will explore and discuss the properties of CdZnTe detectors with ZnO:Al contacts.

Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Manh-Hung; Tian, Liang; Chaker, Ahmad

ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure-property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural andmore » chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO2 and Al2O3, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors' distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overall microstructure and resulting properties of the final thin film.« less

Optical properties of P ion implanted ZnO

NASA Astrophysics Data System (ADS)

Pong, Bao-Jen; Chou, Bo-Wei; Pan, Ching-Jen; Tsao, Fu-Chun; Chi, Gou-Chung

2006-02-01

Red and green emissions are observed from P ion implanted ZnO. Red emission at ~680 nm (1.82 eV) is associated with the donor-acceptor pair (DAP) transition, where the corresponding donor and acceptor are interstitial zinc (Zn i) and interstitial oxygen (O i), respectively. Green emission at ~ 516 nm (2.40 eV) is associated with the transition between the conduction band and antisite oxygen (O Zn). Green emission at ~516nm (2.403 eV) was observed for ZnO annealed at 800 oC under ambient oxygen, whereas, it was not visible when it was annealed in ambient nitrogen. Hence, the green emission is most likely not related to oxygen vacancies on ZnO sample, which might be related to the cleanliness of ZnO surface, a detailed study is in progress. The observed micro-strain is larger for N ion implanted ZnO than that for P ion implanted ZnO. It is attributed to the larger straggle of N ion implanted ZnO than that of P ion implanted ZnO. Similar phenomenon is also observed in Be and Mg ion implanted GaN.

Design of Shallow Acceptors in GaN through Zinc-Magnium Codoping: First-Principles Calculation

NASA Astrophysics Data System (ADS)

Liu, Zhiqiang; Melton, Andrew G.; Yi, Xiaoyan; Wang, Jianwei; Kucukgok, Bahadir; Kang, Jun; Lu, Na; Wang, Junxi; Li, Jinmin; Ferguson, Ian

2013-04-01

In this work, we propose a novel approach to reduce the ionization energy of acceptors in GaN through Zn-Mg codoping. The characteristics of the defect states and the valence-band maximum (VBM) were investigated via first-principles calculation. Our results indicated that the original VBM of the host GaN could be altered by Zn-Mg codoping, thus improving the p-type dopability. We show that the calculated ionization energy ɛ(0/-) of the Zn-Mg acceptor is only 117 meV, which is about 90 meV shallower than that of the isolated Mg acceptor.

Colossal permittivity and the polarization mechanism of (Mg, Mn) co-doped LaGaO3 ceramics

NASA Astrophysics Data System (ADS)

Luo, Tingting; Liu, Zhifu; Zhang, Faqiang; Li, Yongxiang

2018-03-01

Mg and Mn co-doped LaGa0.7-xMgxMn0.3O3 (x = 0, 0.05, 0.10, 0.15) ceramics were prepared by a solid-state reaction method. The electrical properties of the LaGa0.7-xMgxMn0.3O3 ceramics were studied in detail by dielectric spectra, impedance spectra, and I-V characteristic analysis. Colossal permittivity up to 104 could be obtained across the frequency range up to 104 Hz. The impedance analysis of the co-doped LaGaO3 ceramics indicated that the Mott's variable range hopping (VRH) polarization should be the main origin of colossal permittivity. Mg and Mn co-doping suppressed the formation of Mn3+ and enhanced the VRH polarization, resulting in increased permittivity. Partial localization of electrons by Mg reduced the long-range electron hopping and led to the decrease in dielectric loss.

Broadband down-conversion based near infrared quantum cutting in Eu{sup 2+}–Yb{sup 3+} co-doped SrAl{sub 2}O{sub 4} for crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tai, Yuping, E-mail: yupingtai@126.com; Zheng, Guojun, E-mail: zhengguojun88@126.com; Wang, Hui, E-mail: huiwang@nwu.edu.cn

2015-03-15

Near infrared (NIR) quantum cutting involving the down conversion of an absorbed visible photon to emission of two NIR photons was achieved in SrAl{sub 2}O{sub 4}:0.01Eu{sup 2+}, xYb{sup 3+} (x=0, 1, 2, 5, 10, 20, 30 mol%) samples. The photoluminescence properties of samples in visible and NIR regions were measured to verify the energy transfer (ET) from Eu{sup 2+} to Yb{sup 3+}. The results demonstrated that Eu{sup 2+} was an efficient sensitizer for Yb{sup 3+} in the SrAl{sub 2}O{sub 4} host lattice. According to Gaussian fitting analysis and temperature-dependent luminescence experiments, the conclusion was drawn that the cooperative energy transfermore » (CET) process dominated the ET process and the influence of charge transfer state (CTS) of Yb{sup 3+} could be negligible. As a result, the high energy transfer efficiency (ETE) and quantum yield (QY) have been acquired, the maximum value approached 73.68% and 147.36%, respectively. Therefore, this down-conversion material has potential application in crystalline silicon solar cells to improve conversion efficiency. - Graphical abstract: Near infrared quantum cutting was achieved in Eu{sup 2+}–Yb{sup 3+} co-doped SrAl{sub 2}O{sub 4} samples. The cooperative energy transfer process dominated energy transfer process and high energy transfer efficiency was acquired. - Highlights: • The absorption spectrum of Eu{sup 2+} ion is strong in intensity and broad in bandwidth. • The spectra of Eu{sup 2+} in SrAl{sub 2}O{sub 4} lies in the strongest region of solar spectrum. • The cooperative energy transfer (CET) dominated the energy transfer process. • The domination of CET is confirmed by experimental analysis. • SrAl{sub 2}O{sub 4}:Eu{sup 2+},Yb{sup 3+} show high energy transfer efficiency and long lifetime.« less

Improved visible-light photocatalytic activity of TiO2 co-doped with copper and iodine

NASA Astrophysics Data System (ADS)

Dorraj, Masoumeh; Goh, Boon Tong; Sairi, Nor Asrina; Woi, Pei Meng; Basirun, Wan Jefrey

2018-05-01

Cu-I-co-doped TiO2 photocatalysts active to visible light absorption were prepared by hydrothermal method and calcined at various temperatures (350 °C, 450 °C, and 550 °C). The co-doped powders at 350 °C displayed the highest experimental Brunauer-Emmett-Teller surface area and lowest photoluminescence intensity, which demonstrated that a decrease in electron-hole recombination process. The synthesis of co-doped TiO2 was performed at this optimized temperature. In the co-doped sample, the Cu2+ doped TiO2 lattice created a major "red-shift" in the absorption edge due to the presence of the 3d Cu states, whereas the amount of red-shift from the I5+ doping in the TiO2 lattice was minor. Interestingly, the presence of Cu2+ species also boosted the reduction of I5+ ions to the lower multi-valance state I- in the TiO2 lattice by trapping the photogenerated electrons, which resulted in effective separation of the photogenerated charges. The Cu-I-co-doped TiO2 was able to degrade methyl orange dye under visible-light irradiation with improved photocatalytic activity compared with the single metal-doped TiO2 and pure TiO2 because of the strong visible light absorption and effective separation of photogenerated charges caused by the synergistic effects of Cu and I co-dopants.

In vitro antibacterial activity of ZnO and Nd doped ZnO nanoparticles against ESBL producing Escherichia coli and Klebsiella pneumoniae

PubMed Central

Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan

2016-01-01

Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm−1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls. PMID:27071382

Enhanced electrical activation in In-implanted Ge by C co-doping

DOE PAGES

Feng, R.; Kremer, F.; Sprouster, D.; ...

2015-11-22

At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C þ In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result ofmore » C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.« less

Improvement of Flame-made ZnO Nanoparticulate Thick Film Morphology for Ethanol Sensing

PubMed Central

Liewhiran, Chaikarn; Phanichphantandast, Sukon

2007-01-01

ZnO nanoparticles were produced by flame spray pyrolysis using zinc naphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%). The particles properties were analyzed by XRD, BET. The ZnO particle size and morphology was observed by SEM and HR-TEM revealing spheroidal, hexagonal, and rod-like morphologies. The crystallite sizes of ZnO spheroidal and hexagonal particles ranged from 10-20 nm. ZnO nanorods were ranged from 10-20 nm in width and 20-50 nm in length. Sensing films were produced by mixing the nanoparticles into an organic paste composed of terpineol and ethyl cellulose as a vehicle binder. The paste was doctor-bladed onto Al2O3 substrates interdigitated with Au electrodes. The morphology of the sensing films was analyzed by optical microscopy and SEM analysis. Cracking of the sensing films during annealing process was improved by varying the heating conditions. The gas sensing of ethanol (25-250 ppm) was studied at 400 °C in dry air containing SiC as the fluidized particles. The oxidation of ethanol on the surface of the semiconductor was confirmed by mass spectroscopy (MS). The effect of micro-cracks was quantitatively accounted for as a provider of extra exposed edges. The sensitivity decreased notably with increasing crack of sensing films. It can be observed that crack widths were reduced with decreasing heating rates. Crack-free of thick (5 μm) ZnO films evidently showed higher sensor signal and faster response times (within seconds) than cracked sensor. The sensor signal increased and the response time decreased with increasing ethanol concentration.

Enhanced bioactivity of ZnO nanoparticles—an antimicrobial study

NASA Astrophysics Data System (ADS)

Padmavathy, Nagarajan; Vijayaraghavan, Rajagopalan

2008-07-01

In this study, we investigate the antibacterial activity of ZnO nanoparticles with various particle sizes. ZnO was prepared by the base hydrolysis of zinc acetate in a 2-propanol medium and also by a precipitation method using Zn(NO3)2 and NaOH. The products were characterized by x-ray diffraction (XRD) analysis, transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. Bacteriological tests such as minimum inhibitory concentration (MIC) and disk diffusion were performed in Luria-Bertani and nutrient agar media on solid agar plates and in liquid broth systems using different concentrations of ZnO by a standard microbial method for the first time. Our bacteriological study showed the enhanced biocidal activity of ZnO nanoparticles compared with bulk ZnO in repeated experiments. This demonstrated that the bactericidal efficacy of ZnO nanoparticles increases with decreasing particle size. It is proposed that both the abrasiveness and the surface oxygen species of ZnO nanoparticles promote the biocidal properties of ZnO nanoparticles.

Multifunctional transparent ZnO nanorod films.

PubMed

Kwak, Geunjae; Jung, Sungmook; Yong, Kijung

2011-03-18

Transparent ZnO nanorod (NR) films that exhibit extreme wetting states (either superhydrophilicity or superhydrophobicity through surface chemical modification), high transmittance, UV protection and antireflection have been prepared via the facile ammonia hydrothermal method. The periodic 1D ZnO NR arrays showed extreme wetting states as well as antireflection properties due to their unique surface structure and prevented the UVA region from penetrating the substrate due to the unique material property of ZnO. Because of the simple, time-efficient and low temperature preparation process, ZnO NR films with useful functionalities are promising for fabrication of highly light transmissive, antireflective, UV protective, antifogging and self-cleaning optical materials to be used for optical devices and photovoltaic energy devices.

Methanesulfonic acid-assisted synthesis of N/S co-doped hierarchically porous carbon for high performance supercapacitors

NASA Astrophysics Data System (ADS)

Huo, Silu; Liu, Mingquan; Wu, Linlin; Liu, Mingjie; Xu, Min; Ni, Wei; Yan, Yi-Ming

2018-05-01

Nitrogen and sulfur co-doped carbons are considered as electrode materials for high performance supercapacitors, while their further development is still limited by complicated synthesis procedure, unsatisfied structure and low energy density. Developing a simple synthetic strategy to obtain rationally structured carbon materials and high supercapacitor performance is remaining a grand challenge. Herein, we describe the synthesis of nitrogen and sulfur co-doped hierarchical porous carbons as high performance supercapacitors electrode by a methanesulfonic acid-assisted one-step carbonization and activation of the freeze-dried precursors mixture. The as-prepared carbon material not only exhibits ideally hierarchical pores, but also realizes uniform nitrogen and sulfur co-doping. In 6.0 M KOH electrolyte, the material can achieve a high specific capacitance of 272 F g-1 at 1.0 A g-1 and a promising rate performance retaining 172 F g-1 even at 100 A g-1. Moreover, a fabricated symmetric supercapacitor based on as-prepared nitrogen and sulfur co-doped hierarchical porous carbon delivers high energy densities of 12.4 W h kg-1 and 8.0 W h kg-1 in 6.0 M KOH liquid and KOH/PVA solid-state electrolytes, respectively. This work presents a simple and effective methanesulfonic acid-assisted approach for mass production of heteroatomic doping hierarchical porous carbons for future energy storage applications.

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S.

2014-04-24

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology andmore » vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.« less

Composites of ZnO nanoparticles and biomass based activated carbon: adsorption, photocatalytic and antibacterial capacities.

PubMed

Cruz, G J F; Gómez, M M; Solis, J L; Rimaycuna, J; Solis, R L; Cruz, J F; Rathnayake, B; Keiski, R L

2018-05-01

Composite material (AC-ZnO) was prepared by growing ZnO nanoparticles during the production of biomass based-activated carbon (AC) via the incorporation of zinc acetate in the process. Comprehensive analyses confirmed the presence of ZnO nanoparticles over the AC surface and described the particular nature of the composite adsorbent. Methylene blue (MB) equilibrium data fitted the Dubinin-Radushkevich model. The MB adsorption capacity was higher for the bare activated carbons (197.9-188.7 mg/g) than the activated carbons with ZnO nanoparticles (137.6-149.7 mg/g). The adsorption of the MB on the adsorbents is physical because the mean adsorption energy (E) is between 1.76 and 2.00 kJ/mol. Experiments that combine adsorption and photocatalysis were carried out with different loads of adsorbents and with and without UV-light exposure. Photocatalytic activity was identified mostly at the first stage of the adsorption process and, in the case of experiments with less load of the composite AC-ZnO, because the light obstruction effect of the activated carbon is more for higher loads. The ZnO grown over AC improves the adsorption of cations such as Pb, Al and Fe in aqueous phase (polluted river water) and provides antibacterial capacity against Escherichia coli and Salmonella typhimurium.

Structural studies of ZnO nanostructures by varying the deposition parameters

NASA Astrophysics Data System (ADS)

Yunus, S. H. A.; Sahdan, M. Z.; Ichimura, M.; Supee, A.; Rahim, S.

2017-01-01

The effect of Zinc Oxide (ZnO) thin film on the growth of ZnO nanorods (NRs) was investigated. The structures of ZnO NRs were synthesized by chemical bath deposition (CBD) method in aqueous solution of N2O6Zn.6H2O and C6H12N4 at 90°C of deposition temperature. One of the ZnO NRs samples was deposited on a ZnO seed layer coated on a glass substrate to investigate the properties of ZnO NRs without receiving effect of other materials. Next, for diode application, the ZnO NRs was deposited on tin monosulfide (SnS) coated on indium-tin-oxide (ITO) coated glass substrate (SnS/ITO). The next, the ZnO structural properties were studied from surface morphology, X-ray diffractometer (XRD) spectra, and chemical composition by using field emission scanning electron microscope (FESEM), XRD and energy dispersive X-ray Spectroscopy (EDX). The growth of ZnO NRs on ZnO seed layer was investigated by ZnO seed layer condition while the growth of ZnO NRs on SnS/ITO was investigated by deposition time and deposition temperature parameters. From FESEM images, aligned ZnO NRs were obtained, and the diameters of ZnO NRs were 0.024-3.94 µm. The SnS thin film was affected by the diameter of ZnO NRs which are the ZnO NRs grow on SnS thin films has a larger diameter compared to ZnO NRs grow on ZnO seed layer. Besides that, all of ZnO peaks observed from XRD corresponding to the wurzite structure and preferentially oriented along the c-axis. In addition, EDX shows a high composition of zinc (Zn) and oxygen (O) signals, which indicated that the NRs are indeed made up of Zn and O.

Towards the development of new phosphors with reduced content of rare earth elements: Structural and optical characterization of Ce:Tb: Al{sub 2}SiO{sub 5}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiriu, D.; Stagi, L.; Carbonaro, C.M.

2016-05-15

Highlights: • A new promising inert matrix as host of luminescent ions is proposed. • Al2SiO5 matrix is free from Rare earths (critical raw materials). • Doping the matrix with Ce and Tb we obtain an efficient green emitter. • Cerium acts as sensitizer for Terbium emission. - Abstract: A new promising inert matrix as host of luminescent ions is proposed. Al2SiO5 samples, doped with rare earths (Ce, Tb single doped and co-doped) are proposed as good prospect for the development of new UV–vis converter with reduced content of rare earths elements. Structural characterization by Raman, XRD spectroscopy and TEMmore » imaging reveals the sillimanite phase and nano sized dimension of the investigated powders. Optical characterization by steady time and time resolved emission spectroscopy for the single doped and co-doped samples allows to identify an efficient energy transfer from Ce to Tb ions under near UV excitation wavelength. The intense green emission observed in the Ce:Tb co-doped Al2SiO5 system suggests its potential application as efficient blue pumped green emitter phosphor to be exploited for white LED: to this purpose we tested the compound in combination with a red emitting doping ion recording for Ce:Tb:Cr:ASO system a correlated color temperature of 6720 K.« less

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Le, H. Q.; Lim, S. K.; Goh, G. K. L.; Chua, S. J.; Ang, N. S. S.; Liu, W.

2010-09-01

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl2O4 spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×1020 cm-3 (and carrier mobility of 28 cm2/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.

Erbium and nitrogen co-doped SrTiO{sub 3} with highly visible light photocatalytic activity and stability by solvothermal synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Jing; Wei, Yuelin, E-mail: ylwei@hqu.edu.cn; Huang, Yunfang

Highlights: • Er/N co-doped SrTiO{sub 3} was prepared by a solvothermal process at low temperature. • The co-doping induces the band gap narrowing and prominent absorbance in visible light region. • The samples show excellent catalytic activity and stability under visible light irradiation. - Abstract: Erbium–nitrogen co-doped SrTiO{sub 3} photocatalysts have been synthesized by a facile solvothermal method. The resulting samples were analyzed by FE-SEM, XRD, BET-surface area and UV–vis. The UV–vis absorption spectra of these powders indicated that erbium–nitrogen co-doped SrTiO{sub 3} possessed stronger absorption bands in the visible light region in comparison with that of pure SrTiO{sub 3}.more » The occurrence of the erbium–nitrogen co-doped cubic SrTiO{sub 3} induced the higher photocatalytic activities for the degradation of methyl orange (MO) under irradiation by ultraviolet light and visible light, respectively, being superior to that of pure SrTiO{sub 3} and commercial TiO{sub 2} (P-25) powders. In addition, the Er–N co-doped SrTiO{sub 3} (initial molar ratios of Sr/Er/N = 1:0.015:0.1, designated as S5) sample showed the best photocatalytic activity with the degradation rate as high as 98% after 30 min under the visible light irradiation. After five cycles, the photocatalytic activity of the S5 catalyst showed no significant decrease, which indicated that the photocatalysts were stable under visible light irradiation.« less

Gd{sup 3+} incorporated ZnO nanoparticles: A versatile material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Surender, E-mail: surender40@gmail.com; Sahare, P.D.

Graphical abstract: - Highlights: • Chemically synthesized Gd{sup 3+} doped ZnO nanoparticles. • The broad visible emission of the ZnO is dependent on the surface defects and can be tailored by Gd{sup 3+} doing. • PL and magnetic properties are modified by Gd{sup 3+} doping. • Photocatalysis experiment reveals that the ZnO: Gd{sup 3+} degrades the Rh B dye faster than the undoped ZnO. - Abstract: Gd{sup 3+} doped ZnO nanoparticles are synthesized by wet chemical route method and investigated through structural, optical, magnetic and photocatalytic properties. Transmission Electron Microscopy technique has been performed on undoped and Gd{sup 3+} dopedmore » ZnO nanoparticles. X-ray diffraction, X-ray photoelectron spectroscopy and Raman analyses are carried out in order to examine the desired phase formation and substitution of Gd{sup 3+} in the ZnO matrix. Gd{sup 3+} doped ZnO nanoparticles show enhanced photoluminescent and ferromagnetic properties as compared to undoped ZnO. The broad visible emission of ZnO is found to be largely dependent on the surface defects and these surface defects can be tailored by Gd{sup 3+} doping concentration. Furthermore, Gd{sup 3+} doped ZnO nanoparticles also show improved photocatalytic properties as compared with undoped ZnO nanoparticles under ultraviolet irradiation.« less

Electronic properties of Cr-N codoped rutile TiO2(110) thin films

NASA Astrophysics Data System (ADS)

Cheng, Zhengwang; Zhang, Lili; Dong, Shihui; Ma, Xiaochuan; Ju, Huanxin; Zhu, Junfa; Cui, Xuefeng; Zhao, Jin; Wang, Bing

2017-12-01

We report our investigation on the electronic properties of Cr-N codoped rutile TiO2(110) single crystal thin films, homoepitaxially grown by pulsed-laser-deposition method, and characterized using scanning tunneling microscopy and spectroscopy (STM/STS), X-ray/ultraviolet photoemission spectroscopy (XPS/UPS), in combination with first-principles calculations. Our results show that the bandgap reduction of the TiO2(110) surface is mainly contributed by the delocalized states whose position is at 2.0 eV below the Fermi level, introduced by the substitutional codoped Cr-2N pair, which is evidenced by the accordance of the results between the STS spectra and the calculated DOS. The codoped Cr-N pair contributes the gap state at about 0.8 eV below the Fermi level, in consistent with the theoretical calculations. While, the monodoped Cr contributes the states either close to the valence band maximum or the conduction band minimum, which should not contribute to the bandgap reduction too much. Our experimental results joint with theoretical calculations provide an atomic view of the bandgap reduction of the rutile TiO2(110) surface, which indicates that the excess substitutional N atoms should be important to efficiently narrow the bandgap by introducing the Cr-2N pairs.

Surface potential driven dissolution phenomena of [0 0 0 1]-oriented ZnO nanorods grown from ZnO and Pt seed layers

NASA Astrophysics Data System (ADS)

Seo, Youngmi; Kim, Jung Hyeun

2011-06-01

Highly oriented ZnO nanorods are synthesized hydrothermally on ZnO and Pt seed layers, and they are dissolved in KOH solution. The rods grown on ZnO seed layer show uniform dissolution, but those grown on Pt seed layer are rod-selectively dissolved. The ZnO nanorods from both seed layers show the same crystalline structure through XRD and Raman spectrometer data. However, the surface potential analysis reveals big difference for ZnO and Pt seed cases. The surface potential distribution is very uniform for the ZnO seed case, but it is much fluctuated on the Pt seed case. It suggests that the rod-selective dissolution phenomena on Pt seed case are likely due to the surface energy difference.

Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.

PubMed

Lin, Yuan-Yu; Hsu, Che-Chen; Tseng, Ming-Hung; Shyue, Jing-Jong; Tsai, Feng-Yu

2015-10-14

Passivation is a challenging issue for the oxide thin-film transistor (TFT) technologies because it requires prolonged high-temperature annealing treatments to remedy defects produced in the process, which greatly limits its manufacturability as well as its compatibility with temperature-sensitive materials such as flexible plastic substrates. This study investigates the defect-formation mechanisms incurred by atomic layer deposition (ALD) passivation processes on ZnO TFTs, based on which we demonstrate for the first time degradation-free passivation of ZnO TFTs by a TiO2/Al2O3 nanolaminated (TAO) film deposited by a low-temperature (110 °C) ALD process. By combining the TAO passivation film with ALD dielectric and channel layers into an integrated low-temperature ALD process, we successfully fabricate flexible ZnO TFTs on plastics. Thanks to the exceptional gas-barrier property of the TAO film (water vapor transmission rate (WVTR)<10(-6) g m(-2) day(-1)) as well as the defect-free nature of the ALD dielectric and ZnO channel layers, the TFTs exhibit excellent device performance with high stability and flexibility: field-effect mobility>20 cm2 V(-1) s(-1), subthreshold swing<0.4 V decade(-1) after extended bias-stressing (>10,000 s), air-storage (>1200 h), and bending (1.3 cm radius for 1000 times).

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

NASA Astrophysics Data System (ADS)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Optical and magnetic properties of Co-doped CuO flower/plates/particles-like nanostructures.

PubMed

Basith, N Mohamed; Vijaya, J Judith; Kennedy, L John; Bououdina, M; Hussain, Shamima

2014-03-01

In this study, pure and Co-doped CuO nanostructures (0.5, 1.0, 1.5, and 2.0 at wt% of Co) were synthesized by microwave combustion method. The prepared samples were characterized by X-ray diffraction (XRD), high resolution scanning electron microscopy (HR-SEM), energy dispersive X-ray analysis (EDX), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) spectroscopy and vibrating sample magnetometry (VSM). Powder X-ray diffraction patterns refined by the Rietveld method indicated the formation of single-phase monoclinic structure. The surface morphology and elemental analysis of Co-doped CuO nanostructures were studied by using HR-SEM and EDX. Interestingly, the morphology was found to change considerably from nanoflowers to nanoplates then to nanoparticles with the variation of Co concentration. The optical band gap calculated using DRS was found to be 2.1 eV for pure CuO and increases up to 3.4 eV with increasing cobalt content. Photoluminescence measurements also confirm these results. The magnetic measurements indicated that the obtained nanostructures were ferromagnetic at room temperature with an optimum value of saturation magnetization at 1.0 wt.% of Co-doped CuO, i.e., 970 micro emu/g.

Synthesis and characterization of ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anilkumar, T. S., E-mail: anil24march@gmail.com; Girija, M. L., E-mail: girija.ml.grt1@gmail.com; Venkatesh, J., E-mail: phph9502@yahoo.com

2016-05-06

Zinc oxide (ZnO) Thin films were deposited on glass substrate using Spin coating method. Zinc acetate dehydrate, Carbinol and Mono-ethanolamine were used as the precursor, solvent and stabilizer respectively to prepare ZnO Thin-films. The molar ratio of Monoethanolamine to Zinc acetate was maintained as approximately 1. The thickness of the films was determined by Interference technique. The optical properties of the films were studied by UV Vis-Spectrophotometer. From transmittance and absorbance curve, the energy band gap of ZnO is found out. Electrical Conductivity measurements of ZnO are carried out by two probe method and Activation energy for the electrical conductivitymore » of ZnO are found out. The crystal structure and orientation of the films were analyzed by XRD. The XRD patterns show that the ZnO films are polycrystalline with wurtzite hexagonal structure.« less

Enhanced bioactivity of ZnO nanoparticles—an antimicrobial study

PubMed Central

Padmavathy, Nagarajan; Vijayaraghavan, Rajagopalan

2008-01-01

In this study, we investigate the antibacterial activity of ZnO nanoparticles with various particle sizes. ZnO was prepared by the base hydrolysis of zinc acetate in a 2-propanol medium and also by a precipitation method using Zn(NO3)2 and NaOH. The products were characterized by x-ray diffraction (XRD) analysis, transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. Bacteriological tests such as minimum inhibitory concentration (MIC) and disk diffusion were performed in Luria-Bertani and nutrient agar media on solid agar plates and in liquid broth systems using different concentrations of ZnO by a standard microbial method for the first time. Our bacteriological study showed the enhanced biocidal activity of ZnO nanoparticles compared with bulk ZnO in repeated experiments. This demonstrated that the bactericidal efficacy of ZnO nanoparticles increases with decreasing particle size. It is proposed that both the abrasiveness and the surface oxygen species of ZnO nanoparticles promote the biocidal properties of ZnO nanoparticles. PMID:27878001

Electrochemical synthesis of one-dimensional ZnO nanostructures on ZnO seed layer for DSSC applications

NASA Astrophysics Data System (ADS)

Marimuthu, T.; Anandhan, N.; Thangamuthu, R.

2018-01-01

Electrochemical deposition of vertically aligned zinc oxide (ZnO) nanorods were prepared on ZnO seeded fluorine doped tin oxide (FTO) substrate in the solutions consisting of different concentrations of hexamethylenetetramine (HMTA). The electrochemical, structural, morphological, vibrational and optical properties were characterized by cyclic voltammetry (CV), X-ray diffraction (XRD), scanning electron microscope (SEM), Raman spectroscopy and photoluminescence (PL) spectroscopy, respectively. CV curves confirm that metallic zinc phase is not deposited as the HMTA concentration is about 9 mM in a deposition solution. XRD patterns of the as-prepared films show that the increasing HMTA concentrations from 0 mM to 9 mM not only increase the formation of zinc hydrate chloride (Zn5(OH)8Cl2·H2O) but also decrease and finally disappear the metallic Zn deposition. After the as-prepared films annealed at 450 ° C, the crystalline phases of Zn and Zn5(OH)8Cl2·H2O are completely converted to ZnO hexagonal wurtzite phase with high intense growth (002) plane orientation. SEM images support that the vertical growth of ZnO nanostructures (nanorods and petals) with a few flowers is found to be in the cordillera structure as the films are deposited in the solutions consisting of 3 mM, 6 mM and 9 mM HMTA respectively. Raman and PL spectra confirm that the ZnO film deposited in the solution consisting of 9 mM HMTA has a higher crystalline nature with lesser atomic defects and is also higher c-axis growth than that of other films deposited in the solutions consisting of 0 mM, 3 mM and 6 mM, respectively. UV-vis absorbance spectra corroborate that the ZnO film deposited in the solution consisting of 9 mM HMTA shows a high dye absorbance as compared with other films. The efficiency of DSSCs based on ZnO photoanodes deposited in the solutions consisting of 0 mM and 9 mM HMTA was 1.79 and 3.75%, respectively. Electrochemical impedance spectra revealed that DSSC based on ZnO photoanode

Theory of copper impurities in ZnO

NASA Astrophysics Data System (ADS)

Lyons, John; Alkauskas, Audrius; Janotti, Anderson; van de Walle, Chris G.

Due to its connection to deep luminescence signals and its potential use as an acceptor dopant, copper has been one the most studied impurities in ZnO. From experiment, copper incorporating on the Zn site (CuZn) is known to lead to an acceptor level residing near the conduction band of ZnO, making CuZn an exceedingly deep acceptor. CuZn in ZnO has also long been linked with broad 2.4 eV green luminescence (GL) signals. In this work we explore the electrical and optical properties of Cu in ZnO using density functional theory (DFT). Due to the limitations of traditional forms of DFT, an accurate theoretical description of the electrical and optical properties of such deep centers has been difficult to achieve. Here we employ a screened hybrid density functional (HSE) to calculate the properties of Cu in ZnO. We determine the thermodynamic transition levels associated with CuZn in ZnO as well as the associated luminescence lineshapes of characteristic optical transitions. We find that HSE-calculated optical transitions are in close agreement with experimental studies. This work was supported in part by NSF and by ARO.

Effect of intrinsic zinc oxide coating on the properties of Al-doped zinc oxide nanorod arrays

NASA Astrophysics Data System (ADS)

Saidi, S. A.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Yusoff, M. M.; Sin, N. D. Md.; Zoolfakar, A. S.; Khusaimi, Z.; Rusop, M.

2018-05-01

The aim of this study was to explore the influence of intrinsic zinc oxide (ZnO) coating fabricated by a simple immersion method. X-ray powder diffraction (XRD) analysis indicated that the Al-doped ZnO nanorod arrays films had a hexagonal wurtzite structure, similar to that of an intrinsic ZnO coating. Structural properties of the samples were characterised using field emission scanning electron microscopy (FESEM; JEOL JSM-7600F) and optical properties using X-ray diffraction (XRD). The XRD results showed that all films were crystallized under hexagonal wurtzite structure and presented a preferential orientation along the c-axis (002) was obtained. The XRD results showed that the intrinsic ZnO coating material had a strong orientation, whereas the ZnO was randomly oriented. Overall these results indicate that intrinsic ZnO coating are pontetial for the creation of functional materials such as barrier protection, optoelectronic devices, humidity sensor and ultraviolet photoconductive sensor.

Magnetic and plasmonic properties in noncompensated Fe-Sn codoped In2O3 nanodot arrays

NASA Astrophysics Data System (ADS)

Wang, Ya-Nan; Jiang, Feng-Xian; Yan, Li-Juan; Xu, Xiao-Hong

2018-05-01

The noncompensated Fe-Sn codoped In2O3 nanodot arrays with the Sn concentration of 0.02, 0.05, 0.1, 0.15 and 0.2 were deposited on Al2O3 (0 0 0 1) substrates using laser molecular beam epitaxy with the aid of anodic aluminium oxide templates. The structural and compositional results reveal that the nanodot arrays show the single phase cubic In2O3 structure and Sn and Fe dopant ions substitute In3+ sites of the In2O3 lattice with a tetravalence (Sn4+) and a mixed-valence (Fe2+/Fe3+), respectively. All the nanodot arrays exhibit the obvious room temperature ferromagnetic behavior and the localized surface plasmon resonance (LSPR) band. Moreover, the ferromagnetism and the LSPR absorption peak can be tuned by the Sn concentration or sizes of nanodot arrays.

ZnO nanofiber (NFs) growth from ZnO nanowires (NWs) by controlling growth temperature on flexible Teflon substrate by CBD technique for UV photodetector

NASA Astrophysics Data System (ADS)

Farhat, O. F.; Halim, M. M.; Ahmed, Naser M.; Qaeed, M. A.

2016-12-01

In this study, ZnO nanofibers (ZnO NFs) were successfully grown for the first time on Teflon substrates using CBD technique. The well-aligned ZnO nanorods (ZnO NRs) were transformed to ZnO nanofibers (NFs) by varying growth temperature and growth time. The high intensity and distinct growth orientation of peaks observed in the XRD spectra of the NFs indicate high crystal quality. The field emission scanning electron microscopy (FESEM) revealed high density of small diameter sized and long ZnO nanofibers (NFs) that are distributed in random directions. Raman analyses revealed a high E2 (high) peak at 436 nm, which indicates the wurtzite structure of ZnO. A flexible ZnO nanofiber (NFs)-based metal-semiconductor-metal UV detector was fabricated and analyzed for photo response and sensitivity under low power illumination (375 nm, 1.5 mW/cm2). The results showed a sensitivity of 4045% which can be considered a relatively high response and baseline recovery for UV detection.

Radio- and photoluminescence properties of Ce/Tb co-doped glasses with huntite-like composition

NASA Astrophysics Data System (ADS)

Lorenzi, Roberto; Golubev, Nikita V.; Ziaytdinova, Mariyam Z.; Jarý, Vítězslav; Babin, Vladimir; Malashkevich, Georgii E.; Paleari, Alberto; Sigaev, Vladimir N.; Fasoli, Mauro; Nikl, Martin

2018-04-01

Optical properties of yttria-aluminoborate (YAB) glasses with general composition 10(CexTbyY(1-x-y))-30Al2O3-60B2O3 are investigated and compared with data available on YAB crystals with huntite-like structure. Ce doped samples show optical features ascribable to preferential location of rare earth ions in sites with specific geometry similar to that observed in crystalline structures. Samples prepared with Tb ions as emission activator and Ce ions as sensitizer have been studied within the framework of non-radiative energy transfer. The resulting Förster radius is of 4.6 ± 0.5 Å comparable with that observed in Ce/Tb co-doped YAl3(BO3)4 crystals. The investigated materials possess radio- and photoluminescence emission efficiencies and performances comparable to that of crystalline counterparts with the advantage of having easiness of preparation and workability typical of glassy systems.

Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

NASA Astrophysics Data System (ADS)

Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.

2017-07-01

Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).

Effect of Material of Metal Sublayer and Deposition Configuration on the Texture Formation in the Piezoactive ZnO Films

NASA Astrophysics Data System (ADS)

Veselov, A. G.; Elmanov, V. I.; Kiryasova, O. A.; Nikulin, Yu. V.

2018-01-01

Effect of material of metal sublayer (aluminum, vanadium, chromium, iron, cobalt, nickel, and copper) and deposition configuration on the formation of the oblique and straight texture in the ZnO films is studied. The films that are synthesized in a dc magnetron sputtering system. It is shown that the piezoactive ZnO films with oblique texture that can generate shear waves are formed on the Cr and V metal sublayers in the shifted deposition configuration when the substrate is shifted relative to the magnetron axis toward the region of the target erosion. The piezoactive ZnO films with the straight structure that can generate longitudinal waves are formed on a chemically pure Al sublayer in the symmetric deposition configuration when the substrate is centered with respect to the target. Changes of the sublayer material in both deposition configurations or preliminary oxidation of the sublayer lead to the formation of the piezoactive ZnO films with mixed texture that excite shear and longitudinal waves. Chemical etching is used to show that the ZnO films with the oblique and straight textures exhibit piezoactive properties and can generate hypersound at thicknesses of no less than about 0.3 and about 0.9 μm, respectively.

Fabrication and photovoltaic properties of ZnO nanorods/perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shirahata, Yasuhiro; Tanaike, Kohei; Akiyama, Tsuyoshi

2016-02-01

ZnO nanorods/perovskite solar cells with different lengths of ZnO nanorods were fabricated. The ZnO nanorods were prepared by chemical bath deposition and directly confirmed to be hexagon-shaped nanorods. The lengths of the ZnO nanorads were controlled by deposition condition of ZnO seed layer. Photovoltaic properties of the ZnO nanorods/CH{sub 3}NH{sub 3}PbI{sub 3} solar cells were investigated by measuring current density-voltage characteristics and incident photon to current conversion efficiency. The highest conversion efficiency was obtained in ZnO nanorods/CH{sub 3}NH{sub 3}PbI{sub 3} with the longest ZnO nanorods.

Room and low temperature luminescence properties of CaSO4: Dy , Tm codoped with Li

NASA Astrophysics Data System (ADS)

Can, N.; Karalı, T.; Wang, Y.; Townsend, P. D.; Prokic, M.; Canimoglu, A.

2009-08-01

Rare earths, especially Dy or Tm doped CaSO4 phosphors are actively studied. They have high sensitivity, a large dynamic range, thermal stability and ease of preparation. Nevertheless, they can be enhanced by inclusion of lithium and this study reports some effects of lithium co-dopant on the TL and radioluminescence (RL) emissions of two TL phosphors. Addition of Li as a co-dopant ion was made either during chemical preparation of the phosphors, or as a binder component mixed with the basic phosphors matrix during the process of pressing and sintering the TLD pellets.

Strong electroluminescence from SiO{sub 2}-Tb{sub 2}O{sub 3}-Al{sub 2}O{sub 3} mixed layers fabricated by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rebohle, L., E-mail: l.rebohle@hzdr.de; Braun, M.; Wutzler, R.

2014-06-23

We report on the bright green electroluminescence (EL) with power efficiencies up to 0.15% of SiO{sub 2}-Tb{sub 2}O{sub 3}-mixed layers fabricated by atomic layer deposition and partly co-doped with Al{sub 2}O{sub 3}. The electrical, EL, and breakdown behavior is investigated as a function of the Tb and the Al concentration. Special attention has been paid to the beneficial role of Al{sub 2}O{sub 3} co-doping which improves important device parameters. In detail, it increases the maximum EL power efficiency and EL decay time, it nearly doubles the fraction of excitable Tb{sup 3+} ions, it shifts the region of high EL powermore » efficiencies to higher injection currents, and it reduces the EL quenching over the device lifetime by an approximate factor of two. It is assumed that the presence of Al{sub 2}O{sub 3} interferes the formation of Tb clusters and related defects. Therefore, the system SiO{sub 2}-Tb{sub 2}O{sub 3}-Al{sub 2}O{sub 3} represents a promising alternative for integrated, Si-based light emitters.« less

Effect of boron and phosphorus codoping on the electronic and optical properties of graphitic carbon nitride monolayers: First-principle simulations

NASA Astrophysics Data System (ADS)

Yousefi, Mahdieh; Faraji, Monireh; Asgari, Reza; Moshfegh, Alireza Z.

2018-05-01

We study the effect of boron (B) and phosphorous (P) doping and B/P codoping on electronic and optical properties of graphitic carbon nitride (g-C3N4 or GCN) monolayers using density functional simulations. The energy band structure indicates that the incorporation of both B and P into a hexagonal lattice of GCN reduces the energy band gap from 3.1 for pristine GCN to 1.9 eV, thus extending light absorption toward the visible region. Moreover, on the basis of calculating absorption spectra and dielectric function, the codoped system exhibits an improved absorption intensity in the visible region and more electronic transitions, which named π* electronic transitions that occurred and were prohibited in the pristine GCN. These transitions can be attributed to charge redistribution upon doping, caused by distorted configurable B/P-codoped GCN confirmed by both electron density and Mulliken charge population. Therefore, B/P-codoped GCN is expected to be an auspicious candidate to be used as a promising photoelectrode in photoelectrochemical water splitting reactions leading to efficient solar H2 production.

Carrier-induced ferromagnetism in half-metallic Co-doped ZnS-diluted magnetic semiconductor: a DFT study

NASA Astrophysics Data System (ADS)

Saikia, D.; Borah, J. P.

2018-03-01

Systematic experimental and theoretical calculations have been performed to investigate the origin of the carrier-induced ferromagnetism in the Co-doped ZnS-diluted magnetic semiconductors. The crystalline structure, morphology of the chemically synthesized Co-doped ZnS nanoparticles are evaluated using X-ray diffraction (XRD) and transmission electron microscopy (TEM) and obtained the average crystallite size in the range 5-8 nm. Fourier transform-infrared spectra reveal the characteristic Zn-S vibrations of cubic ZnS and also show the splitting of peaks with increasing Co concentration which indicates that the Co-doping level beyond 3% affects the structure of ZnS. The room temperature ferromagnetic behavior analyzed by M- H curve exhibited up to the doping level 5%, achieving due to the indirect ` p- d' exchange interactions between the localized ` d' spins of Co2+ ion and the free-delocalized carriers in the host lattice. The existence of the antiferromagnetic coupling is discernable beyond the 5% doping level, owing to the short-range super-exchange interactions between the characteristic ` d' spins of the Co2+ ions which minimize the ferromagnetic ordering. Band structure and density of states (DOS) calculations demonstrate the p- d hybridization mechanism in Co-doped ZnS system which is the main cause of realizing ferromagnetic ordering in the system and also shows the half-metallic characteristics with the combination of semiconducting and metallic nature in the spin-up and spin-down states, respectively.

Identification of Cr valence states in Cr and Nd co-doped Lu3Al5O12 laser ceramics

NASA Astrophysics Data System (ADS)

Zhang, Pande; Jiang, Benxue; Fan, Jintai; Mao, Xiaojian; Zhang, Long

2017-09-01

Cr and Nd co-doped laser ceramics, as the potential gain materials in inertial confinement fusion (ICF), have been widely investigated. And the study on valence states of chromium ions is important. The effects of sintering additives and annealing atmosphere on the valence state of chromium were studied in detail, and the results shown that the Cr valence states were demonstrated to be Cr2+ and Cr3+ ions in HIP-sintered Cr(0.2 at.%), Nd(0.8 at.%): LuAG laser ceramics. And the intensity of the near-infrared absorption band caused by Cr2+ ions was attenuated with the decreasing SiO2 concentration and increasing MgO amount. The near-infrared absorption could be eliminated by annealing in air. And the transformation of valence states of Cr ions in the Cr,Nd:LuAG ceramics were also confirmed by electron paramagnetic resonance and X-ray photoelectron spectroscopy.

Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance