Exploration of Al-Doped ZnO in Photovoltaic Thin Films

NASA Astrophysics Data System (ADS)

Ciccarino, Christopher; Sahiner, M. Alper

The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

Advanced Mechanical Properties of a Powder Metallurgy Ti-Al-N Alloy Doped with Ultrahigh Nitrogen Concentration

NASA Astrophysics Data System (ADS)

Shen, J.; Chen, B.; Umeda, J.; Kondoh, K.

2018-03-01

Titanium and its alloys are recognized for their attractive properties. However, high-performance Ti alloys are often alloyed with rare or noble-metal elements. In the present study, Ti alloys doped with only ubiquitous elements were produced via powder metallurgy. The experimental results showed that pure Ti with 1.5 wt.% AlN incorporated exhibited excellent tensile properties, superior to similarly extruded Ti-6Al-4V. Further analysis revealed that its remarkably advanced strength could primarily be attributed to nitrogen solid-solution strengthening, accounting for nearly 80% of the strength increase of the material. In addition, despite the ultrahigh nitrogen concentration up to 0.809 wt.%, the Ti-1.5AlN sample showed elongation to failure of 10%. This result exceeds the well-known limitation for nitrogen (over 0.45 wt.%) that causes embrittlement of Ti alloys.

Passivation of phosphorus diffused silicon surfaces with Al{sub 2}O{sub 3}: Influence of surface doping concentration and thermal activation treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richter, Armin, E-mail: armin.richter@ise.fraunhofer.de; Benick, Jan; Kimmerle, Achim

2014-12-28

Thin layers of Al{sub 2}O{sub 3} are well known for the excellent passivation of p-type c-Si surfaces including highly doped p{sup +} emitters, due to a high density of fixed negative charges. Recent results indicate that Al{sub 2}O{sub 3} can also provide a good passivation of certain phosphorus-diffused n{sup +} c-Si surfaces. In this work, we studied the recombination at Al{sub 2}O{sub 3} passivated n{sup +} surfaces theoretically with device simulations and experimentally for Al{sub 2}O{sub 3} deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal duemore » to depletion or weak inversion of the charge carriers at the c-Si/Al{sub 2}O{sub 3} interface. This pronounced maximum was also observed experimentally for n{sup +} surfaces passivated either with Al{sub 2}O{sub 3} single layers or stacks of Al{sub 2}O{sub 3} capped by SiN{sub x}, when activated with a low temperature anneal (425 °C). In contrast, for Al{sub 2}O{sub 3}/SiN{sub x} stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n{sup +} diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al{sub 2}O{sub 3}/SiN{sub x} stacks can provide not only excellent passivation on p{sup +} surfaces but also on n{sup +} surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments.« less

Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

PubMed Central

Zheng, T. C.; Lin, W.; Liu, R.; Cai, D. J.; Li, J. C.; Li, S. P.; Kang, J. Y.

2016-01-01

A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 1018 cm−3, while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices. PMID:26906334

Importance of doping and frustration in itinerant Fe-doped Cr 2Al

DOE PAGES

Susner, M. A.; Parker, D. S.; Sefat, A. S.

2015-05-12

We performed an experimental and theoretical study comparing the effects of Fe-doping of Cr 2Al, an antiferromagnet with a N el temperature of 670 K, with known results on Fe-doping of antiferromagnetic bcc Cr. (Cr 1-xFe x) 2Al materials are found to exhibit a rapid suppression of antiferromagnetic order with the presence of Fe, decreasing T N to 170 K for x=0.10. Antiferromagnetic behavior disappears entirely at x≈0.125 after which point increasing paramagnetic behavior is exhibited. Moreover, this is unlike the effects of Fe doping of bcc antiferromagnetic Cr, in which T N gradually decreases followed by the appearance ofmore » a ferromagnetic state. Theoretical calculations explain that the Cr 2Al-Fe suppression of magnetic order originates from two effects: the first is band narrowing caused by doping of additional electrons from Fe substitution that weakens itinerant magnetism; the second is magnetic frustration of the Cr itinerant moments in Fe-substituted Cr 2Al. In pure-phase Cr 2Al, the Cr moments have an antiparallel alignment; however, these are destroyed through Fe substitution and the preference of Fe for parallel alignment with Cr. This is unlike bulk Fe-doped Cr alloys in which the Fe anti-aligns with the Cr atoms, and speaks to the importance of the Al atoms in the magnetic structure of Cr 2Al and Fe-doped Cr 2Al.« less

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

NASA Astrophysics Data System (ADS)

Ajay, A.; Lim, C. B.; Browne, D. A.; Polaczyński, J.; Bellet-Amalric, E.; Bleuse, J.; den Hertog, M. I.; Monroy, E.

2017-10-01

In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the doping density and well/nanodisk size. We observe that nanowire heterostructures consistently present longer photoluminescence decay times than their planar counterparts, which supports the existence of an in-plane piezoelectric field associated to the shear component of the strain tensor in the nanowire geometry. Regarding the ISB characteristics, we report absorption covering 1.45-1.75 μm using Ge-doped quantum wells, with comparable performance to Si-doped planar heterostructures. We also report similar ISB absorption in Si- and Ge-doped nanowire heterostructures indicating that the choice of dopant is not an intrinsic barrier for observing ISB phenomena. The spectral shift of the ISB absorption as a function of the doping concentration due to many body effects confirms that Si and Ge efficiently dope GaN/AlN nanowire heterostructures.

Enhancement of the Ultraviolet Photoresponsivity of Al-doped ZnO Thin Films Prepared by using the Sol-gel Spin-coating Method

NASA Astrophysics Data System (ADS)

Lee, Wookbin; Leem, Jae-Young

2018-03-01

We report the structural, morphological, optical, and ultraviolet (UV) photoresponse properties of Al-doped ZnO (AZO) thin films prepared on silicon substrates with different Al doping concentrations by using the sol-gel spin-coating method. An analysis of the X-ray diffraction patterns of the AZO thin films revealed that the average grain size decreased and the c-axis lattice constant increased with Al content. The field-emission scanning electron microscopy images showed that with Al doping, the grain size decreased, but the film density increased with increasing Al doping concentration from 0% to 3%. These results indicate that the surface area of the film increased with increasing Al doping. The absorbance spectra revealed that the UV absorbance of the AZO thin films increased with increasing Al doping concentration and that the absorption onset shifted towards lower energies. The photoluminescence spectra revealed that with increasing Al doping, the intensity of the visible emission greatly decreased and the visible emission peak shifted forward lower energy (a red shift). The UV sensor based on the AZO thin films exhibited a higher responsivity than that based on the undoped ZnO thin film. Therefore, this study provides a facile method for improving the photoresponsivity of UV sensors.

Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy

NASA Astrophysics Data System (ADS)

Kusch, Gunnar; Mehnke, Frank; Enslin, Johannes; Edwards, Paul R.; Wernicke, Tim; Kneissl, Michael; Martin, Robert W.

2017-03-01

Detailed knowledge of the dopant concentration and composition of wide band gap Al x Ga{}1-x{{N}} layers is of crucial importance for the fabrication of ultra violet light emitting diodes. This paper demonstrates the capabilities of wavelength dispersive x-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution x-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap Al x Ga{}1-x{{N}} samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH4/group-III ratio, measuring Si concentrations between 3× {10}18 cm-3 and 2.8× {10}19 cm-3, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.

Spectroscopic properties of Tm3+/Al3+ co-doped sol-gel silica glass

NASA Astrophysics Data System (ADS)

Wang, Xue; Lou, Fengguang; Wang, Shikai; Yu, Chunlei; Chen, Danping; Hu, Lili

2015-04-01

Tm3+/Al3+ co-doped silica glass was prepared by sol-gel method combined with high temperature sintering. Glasses with compositions of xTm2O3-15xAl2O3-(100 - 16x) SiO2 (in mol%, x = 0.1, 0.3, 0.5, 0.8 and 1.0) were prepared. The high thulium doped silica glass was realized. Their spectroscopic parameters were calculated and analyzed by Judd-Ofelt theory. Large absorption cross section (4.65 × 10-21 cm2 at 1668 nm) and stimulated emission cross section (6.00 × 10-21 cm2 at 1812 nm), as well as low hydroxyl content (0.180 cm-1), long fluorescence lifetime (834 μs at 1800 nm), large σem × τrad (30.05 × 10-21 cm2 ms) and large relative intensity ratio of the 1.8 μm (3F4 → 3H6) to 1.46 (3H4 → 3F4) emissions (90.33) are achieved in this Tm3+/Al3+ co-doped silica glasses. According to emission characteristics, the optimum thulium doping concentration is around 0.8 mol%. The cross relaxation (CR) between ground and excited states of Tm3+ ions was used to explain the optimum thulium doping concentration. These results suggest that the sol-gel method is an effective way to prepare Tm3+ doped silica glass with high Tm3+ doping and prospective spectroscopic properties.

Alkali earth co-doping effects on luminescence and scintillation properties of Ce doped Gd3Al2Ga3O12 scintillator

NASA Astrophysics Data System (ADS)

Kamada, Kei; Nikl, Martin; Kurosawa, Shunsuke; Beitlerova, Alena; Nagura, Aya; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2015-03-01

The Mg and Ca co-doped Ce:Gd3Al2Ga3O12 single crystals were prepared by micro pulling down method with a wide concentration range 0-1000 ppm of the codopants. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg and Ca co-doping. The scintillation decays were accelerated by both Mg and Ca codopants. Comparing to Ca co-doping, the Mg co-doped samples showed much faster decay and comparatively smaller light output decrease with increasing Mg dopant concentration.

Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

NASA Astrophysics Data System (ADS)

Asada, Satoshi; Kimoto, Tsunenobu; Ivanov, Ivan G.

2017-08-01

Previous work has shown that the concentration of shallow dopants in a semiconductor can be estimated from the photoluminescence (PL) spectrum by comparing the intensity of the bound-to-the-dopant exciton emission to that of the free exciton. In this work, we study the low-temperature PL of high-quality uncompensated Al-doped p-type 4H-SiC and propose algorithms for determining the Al-doping concentration using the ratio of the Al-bound to free-exciton emission. We use three different cryogenic temperatures (2, 41, and 79 K) in order to cover the Al-doping range from mid 1014 cm-3 up to 1018 cm-3. The Al-bound exciton no-phonon lines and the strongest free-exciton replica are used as a measure of the bound- and free-exciton emissions at a given temperature, and clear linear relationships are obtained between their ratio and the Al-concentration at 2, 41, and 79 K. Since nitrogen is a common unintentional donor dopant in SiC, we also discuss the criteria allowing one to determine from the PL spectra whether a sample can be considered as uncompensated or not. Thus, the low-temperature PL provides a convenient non-destructive tool for the evaluation of the Al concentration in 4H-SiC, which probes the concentration locally and, therefore, can also be used for mapping the doping homogeneity.

Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Felcy Jyothi, E-mail: jyothiserrao@gmail.com; Department of Physics, Karnataka Government Research centre SCEM, Mangalore, 575007; Sandeep, K. M.

2016-05-23

Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnOmore » thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.« less

Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction Al{sub x}Ga{sub 1–x}N multiple quantum wells grown by metalorganic vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chichibu, S. F., E-mail: chichibulab@yahoo.co.jp; Ishikawa, Y.; Furusawa, K.

2015-09-21

Appropriate-amount Si-doping in the well layers significantly improved the luminescence efficiency of Al{sub 0.68}Ga{sub 0.32}N/Al{sub 0.77}Ga{sub 0.23}N multiple quantum wells. To understand the mechanisms, spatio-time-resolved cathodoluminescence measurements and self-consistent Schrödinger-Poisson calculations were carried out. The increase in the luminescence lifetime at room temperature, which reflects the decrease in the concentration of nonradiative recombination centers (NRCs), was correlated with increased terrace width of Si-doped wells. The results suggest the importance of H{sub 3}SiNH{sub 2} doping-reactant formation that gives rise to enhanced decomposition of NH{sub 3} and provides wetting conditions by surface Si-N bonds, which reduce the total energy and concentration ofmore » NRCs composed of cation vacancies.« less

Influence of high Mg doping on the microstructural and opto-electrical properties of AlGaN alloys

NASA Astrophysics Data System (ADS)

Xu, Qingjun; Zhang, Shiying; Liu, Bin; Tao, Tao; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Chen, Peng; Han, Ping; Zheng, Youdou; Zhang, Rong

2018-07-01

Mg-doped AlxGa1-xN (x = 0.23 and 0.35) alloys have been grown on GaN templates with high temperature AlN (HT-AlN) interlayer by metalorganic chemical vapor deposition (MOCVD). A combination of secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) indicates the formation of more inversion domains in the high Al mole fraction Mg-doped AlGaN alloys at Mg concentration ∼1020 cm-3. For Mg-doped Al0.23Ga0.77N epilayer, the analysis of cathodoluminescence (CL) spectra supports the existence of self-compensation effects due to the presence of intrinsic defects and Mg-related centers. The energy level of Mg is estimated to be around 193 meV from the temperature dependence of the resistivity measured by Hall effect experiments. And hole concentration and mobility are measured to be 1.2 × 1018 cm-3 and 0.56 cm2/V at room temperature, respectively. The reduction of acceptor activation energy and low hole mobility are attributed to inversion domains and self-compensation. Moreover, impurity band conduction is dominant in carrier transport up to a relatively higher temperature in high Al content Mg-doped AlGaN alloys.

Effect of in situ Al doping on structure and optical properties of ZnO nanowires grown by MOCVD

NASA Astrophysics Data System (ADS)

Souissi, H.; Jabri, S.; Souissi, A.; Lusson, A.; Galtier, P.; Meftah, A.; Sallet, V.; Oueslati, M.

2018-01-01

Al-doped ZnO nanowires (NWs) were grown on C-axis oriented sapphire by metal organic chemical vapor deposition using dimethylzinc-triethylamine (DMZn-TEN), nitrogen dioxide (NO2) and TMAl as zinc, oxygen and aluminum doping sources respectively. The NWs morphology has been characterized by scanning electron microscopy and transmission electron microscopy. The photoluminescence (PL) spectra exhibit a strong excitonic transition bond that confirms the Al incorporation in the ZnO NWs. Raman results support PL conclusion by showing additional modes in Al-doped ZnO NWs at nearly 270, 510, 579 and 641 cm-1. The micro-Raman scattering analysis along a single Al-doped ZnO needle-like NW shows an increase of the Al concentration from the basis to the tip of the wire.

DFT study of Al doped armchair SWCNTs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhiman, Shobhna, E-mail: s-dhiman@hotmail.com; Rani, Anita; Kumar, Ranjan

2016-05-23

Electronic properties of endohedrally doped armchair single-walled carbon nanotubes (SWCNTs) with a chain of six Al atoms have been studied using ab-initio density functional theory. We investigate the binding energy/atom, ionization potential, electron Affinity and Homo-Lumo gap of doped armchair SWNTs from (4,4) to (6,6) with two ends open. BE/dopant atom and ionization potential is maximum for (6, 6) doped armchair carbon nanotube; suggest that it is more stable than (4, 4) and (5, 5) doped tubes. HOMO - LUMO gap of Al doped arm chair carbon nanotubes decreases linearly with the increase in diameter of the tube. This showsmore » that confinement induce a strong effect on electronic properties of doped tubes. These combined systems can be used for future nano electronics. The ab–initio calculations were performed with SIESTA code using generalized gradient approximation (GGA).« less

Development of MoSi2 coating with Al doping by using high energy milling method

NASA Astrophysics Data System (ADS)

Simanjuntak, C. M. S.; Hastuty, S.; Izzuddin, H.; Sundawa, R.; Sudiro, T.; Sukarto, A.; Thosin, K. A. Z.

2018-03-01

MoSi2 is well known as a material for high temperature application because it has high oxidation and corrosion resistance. The aim of this research is to develop MoSi2 coating with Al doping on Stainless Steel 316 (SS316) substrate using High-Energy Milling method. Aluminium is added to the coating as a dopant to increase formation of MoSi2 coating layer on the substrate. The variations used here based on the concentrations of doping Al (at.%) and duration of milling. Results show that the MoSi2 coatings with variations of 30 and 50 at.% of Al doping and 3 and 6 hours of milling times were successfully coated on the surface of SS 316 using the high-energy milling method. The most optimum coating result after oxidation test at 1100 °C for 100 hours is shown by MoSi2-30%Al with 3 hours of milling times. From the oxidation results, the Al doping into MoSi2 coating was able to increase the oxidation resistance of the SS 316 substrate.

Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface.

PubMed

Lee, M; Arras, R; Warot-Fonrose, B; Hungria, T; Lippmaa, M; Daimon, H; Casanove, M J

2017-11-01

The structure of Ir-doped LaAlO 3 /SrTiO 3 (001) interfaces was investigated on the atomic scale using probe-corrected transmission electron microscopy in high-angle annular dark-field scanning mode (HAADF-STEM) and electron energy loss spectroscopy (EELS), combined with first-principles calculations. We report the evolution of the strain state experimentally measured in a 5 unit-cell thick LaAlO 3 film as a function of the Ir concentration in the topmost SrTiO 3 layer. It is shown that the LaAlO 3 layers remain fully elastically strained up to 3% of Ir doping, whereas a higher doping level seems to promote strain relaxation through enhanced cationic interdiffusion. The observed differences between the energy loss near edge structure (ELNES) of Ti-L 2,3 and O-K edges at non-doped and Ir-doped interfaces are consistent with the location of the Ir dopants at the interface, up to 3% of Ir doping. These findings, supported by the results of density functional theory (DFT) calculations, provide strong evidence that the effect of dopant concentrations on the properties of this kind of interface should not be analyzed without obtaining essential information from the fine structural and chemical analysis of the grown structures.

Compositionally modulated multilayer diamond-like carbon coatings with AlTiSi multi-doping by reactive high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Dai, Wei; Gao, Xiang; Liu, Jingmao; Kwon, Se-Hun; Wang, Qimin

2017-12-01

Diamond-like carbon (DLC) coatings with AlTiSi multi-doping were prepared by a reactive high power impulse magnetron sputtering with using a gas mixture of Ar and C2H2 as precursor. The composition, microstructure, compressive stress, and mechanical property of the as-deposited DLC coatings were studied systemically by using SEM, XPS, TEM, Raman spectrum, stress-tester, and nanoindentation as a function of the Ar fraction. The results show that the doping concentrations of the Al, Ti and Si atoms increased as the Ar fraction increased. The doped Ti and Si preferred to bond with C while the doped Al mainly existed in oxidation state without bonding with C. As the doping concentrations increased, TiC carbide nanocrystals were formed in the DLC matrix. The microstructure of coatings changed from an amorphous feature dominant AlTiSi-DLC to a carbide nanocomposite AlTiSi-DLC with TiC nanoparticles embedding. In addition, the coatings exhibited the compositionally modulated multilayer consisting of alternate Al-rich layer and Al-poor layer due to the rotation of the substrate holder and the diffusion behavior of the doped Al which tended to separate from C and diffuse towards the DLC matrix surface owing to its weak interactions with C. The periodic Al-rich layer can effectively release the compressive stress of the coatings. On the other hand, the hard TiC nanoparticles were conducive to the hardness of the coatings. Consequently, the DLC coatings with relatively low residual stress and high hardness could be acquired successfully through AlTiSi multi-doping. It is believed that the AlCrSi multi-doping may be a good way for improving the comprehensive properties of the DLC coatings. In addition, we believe that the DLC coatings with Al-rich multilayered structure have a high oxidation resistance, which allows the DLC coatings application in high temperature environment.

Experimental and first-principles study of photoluminescent and optical properties of Na-doped CuAlO2: the role of the NaAl-2Na i complex

NASA Astrophysics Data System (ADS)

Liu, Ruijian; Li, Yongfeng; Yao, Bin; Ding, Zhanhui; Deng, Rui; Zhang, Ligong; Zhao, Haifeng; Liu, Lei

2015-08-01

We report that a band-tail emission at 3.08 eV, lower than near-band-edge energy, is observed in photoluminescence measurements of bulk Na-doped CuAlO2. The band-tail emission is attributed to Na-related defects. Electronic structure calculations based on the first-principles method demonstrate that the donor-acceptor compensated complex of NaAl-2Na i in Na-doped CuAlO2 plays a key role in leading to the band-tail emission and bandgap narrowing. Furthermore, Hall effect measurements indicates that the hole concentration in CuAlO2 is independent on Na doping, which is well understood by the donor-acceptor compensation effect of NaAl-2Na i complex.

Humidity sensing properties of Al-doped zinc oxide coating films

NASA Astrophysics Data System (ADS)

Saidi, S. A.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Yusoff, M. M.; Sin, N. D. Md.; Zoolfakar, A. S.; Khusaimi, Z.; Rusop, M.

2018-05-01

Humidity sensor was fabricated using Al-doped zinc oxide (ZnO) coating films through spin-coating at room temperature. The sensing mechanism was discussed based on their nanostructures, such as surface area and porous nanostructures. Surface area and water adsorption are an important component in the low humidity, while at high humidity, porous nanostructures and capillary condensation become important. The results showed that the sensitivity of the Al-doped ZnO coating improved compared to that of the Al-doped ZnO nanorod arrays, with values of 7.38 at 40% to 90%RH (Relative humidity). All these results indicated that Al-doped ZnO coating had high potential for humidity-sensor applications.

Shallow Acceptor State in Mg-Doped CuAlO2 and Its Effect on Electrical and Optical Properties: An Experimental and First-Principles Study.

PubMed

Liu, Ruijian; Li, Yongfeng; Yao, Bin; Ding, Zhanhui; Jiang, Yuhong; Meng, Lei; Deng, Rui; Zhang, Ligong; Zhang, Zhenzhong; Zhao, Haifeng; Liu, Lei

2017-04-12

Shallow acceptor states in Mg-doped CuAlO 2 and their effect on structural, electrical, and optical properties are investigated by combining first-principles calculations and experiments. First-principles calculations demonstrate that Mg substituting at the Al site in CuAlO 2 plays the role of shallow acceptor and has a low formation energy, suggesting that Mg doping can increase hole concentration and improve the conductivity of CuAlO 2 . Hall effect measurements indicate that the hole concentration of the Mg-doped CuAlO 2 thin film is 2 orders of magnitude higher than that of undoped CuAlO 2 . The best room temperature conductivity of 8.0 × 10 -2 S/cm is obtained. A band gap widening is observed in the optical absorption spectra of Mg-doped CuAlO 2 , which is well supported by the results from first-principles electronic structure calculations.

Chemical stability and Ce doping of LiMgAlF 6 neutron scintillator

DOE PAGES

Du, M. H.

2014-11-13

We perform density functional calculations to investigate LiMgAlF 6 as a potential neutron scintillator material. The calculations of enthalpy of formation and phase diagram show that single-phase LiMgAlF 6 can be grown but it should be more difficult than growing LiCaAlF 6 and LiSrAlF 6. Moreover, the formation energy calculations for substitutional Ce show that the concentration of Ce on the Al site is negligible but a high concentration (>1 at.%) of Ce on the Mg site is attainable provided that the Fermi level is more than 5 eV lower than the conduction band minimum. Acceptor doping should promote Cemore » incorporation in LiMgAlF 6.« less

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.

PubMed

Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah A; Shakfa, Mohammad Khaled; Ng, Tien Khee; Ooi, Boon S

2018-06-13

p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

NASA Astrophysics Data System (ADS)

Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

A clear effect of charge compensation through Na+ co-doping on the luminescence spectra and decay kinetics of Nd3+-doped CaAl4O7

NASA Astrophysics Data System (ADS)

Puchalska, M.; Watras, A.

2016-06-01

We present a detailed analysis of luminescence behavior of singly Nd3+ doped and Nd3+, Na+ co-doped calcium aluminates powders: Ca1-xNdxAl4O7 and Ca1-2xNdxNaxAl4O7 (x=0.001-0.1). Relatively intense Nd3+ luminescence in IR region corresponding to typical 4F3/2→4IJ (J=9/2-13/2) transitions with maximum located at about 1079 nm was obtained in all samples on direct excitation into f-f levels. The effect of dopant concentration and charge compensation by co-doping with Na+ ions on morphology and optical properties were studied. The results show that both, the Nd3+ concentration and the alkali metal co-doping affected the optical properties but had no influence on the powders morphology. The studies of luminescence spectra (298 and 77 K) in a function of dopant concentration showed an increasing distortion of the local symmetry of Nd3+with raising activator content due to certain defects created in the crystal lattice. On the other hand Na+ addition led to significant narrowing of absorption and luminescence bands and also a reduction of the number of their components, showing smaller disturbance of Nd3+ ions local symmetries. Consequently, charge compensated by Na+ co-doping materials showed significantly enhanced Nd3+ luminescence. The decrease of emission intensity and luminescence lifetimes with increase of activator concentration was attributed mainly to phonon-assisted cross-relaxation processes between Nd3+ ions. Analysis with Inokuti-Hirayama model indicated dipole-dipole mechanism of ion-ion interaction. Na+ addition led to much smaller concentration quenching due to smaller clustering of dopant ions in CaAl4O7 lattice.

Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

NASA Astrophysics Data System (ADS)

Liang, Y. H.; Towe, E.

2018-03-01

Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

Effect of Al gate on the electrical behaviour of Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Skeparovski, A.; Novkovski, N.; Atanassova, E.; Paskaleva, A.; Lazarov, V. K.

2011-06-01

The electrical behaviour of Al-doped Ta2O5 films on nitrided silicon and implemented in Al-gated MIS capacitors has been studied. The dopant was introduced into the Ta2O5 through its surface by deposing a thin Al layer on the top of Ta2O5 followed by an annealing process. The HRTEM images reveal that the initial double-layer structure of the stacks composed of doped Ta2O5 and interfacial SiON layer undergoes changes during the formation of the Al gate and transforms into a three-layer structure with an additional layer between the Al electrode and the doped Ta2O5. This layer, being a result of reaction between the Al gate and the Al-doped Ta2O5, affects the overall electrical properties of the stacks. Strong charge trapping/detrapping processes have been established in the vicinity of the doped Ta2O5/SiON interface resulting in a large C-V hysteresis effect. The charge trapping also influences the current conduction in the layers keeping the current density level rather low even at high electric fields (J < 10-6 A cm-2 at 7 MV cm-1). By employing a three-layer model of the stack, the permittivity of both, the Al-doped Ta2O5 and the additional layer, has been estimated and the corresponding conduction mechanisms identified.

Longitudinal optical phonon-plasmon coupled modes of degenerate Al-doped ZnO films

NASA Astrophysics Data System (ADS)

Ding, K.; Hu, Q. C.; Lin, W. W.; Huang, J. K.; Huang, F.

2012-07-01

We have investigated the interaction between carriers and polar phonons by using Raman scattering spectroscopy in highly conductive Al-doped ZnO films grown by metalorganic chemical vapor deposition. Different from the longitudinal optical phonon-plasmon coupled modes (LOPPCM) observed in nondegenerate ZnO, an A1(LO)-like mode appears at the low frequency side of the uncoupled A1(LO) mode, and it monotonically shifts to higher frequencies and approaches to the uncoupled A1(LO) mode as Al composition increases. Based on line shape calculations, the A1(LO)-like mode is assigned to the large wave-vector LOPPCM arising from nonconserving scattering dominated by the Al impurity-induced Fröhlich mechanism. Benefiting from the nonmonotonic Al composition dependence of the electron density, it is revealed that the LOPPCM depends mainly on the doping level but not the carrier concentration.

Characterization of conductive Al-doped ZnO thin films for plasmonic applications

NASA Astrophysics Data System (ADS)

Masouleh, F. F.; Sinno, I.; Buckley, R. G.; Gouws, G.; Moore, C. P.

2018-02-01

Highly conductive and transparent Al-doped zinc oxide films were produced by RF magnetron sputtering for plasmonic applications in the infrared region of the spectrum. These films were characterized using Fourier transform infrared spectroscopy, the Hall effect, Rutherford backscattering spectroscopy and spectral data analysis. Analysis of the results shows a carrier concentration of up to 2.6 × 1020 cm-3, as well as transmission over 80% near the plasma frequency where plasmonic properties are expected. The plasma frequency was calculated from the spectroscopy measurements and subsequent data analysis, and was in agreement with the results from the Hall effect measurements and the free electron gas (Drude) model. Based on these results, the Al-doped zinc oxide thin films are well-suited for plasmonic applications in the infrared region.

Encapsulant Characterization and Doped Passivated Contacts for Use in a Luminescent Solar Concentrator

NASA Astrophysics Data System (ADS)

Fogel, Derek

We report progress towards encapsulant characterization and the fabrication of passivated interdigitated back contact silicon solar cells using spin-on dopants for use in a luminescent solar concentrator. For the luminescent solar concentrator to be successful, the encapsulants used to assemble the final device must not contribute to optical losses and the tandem cell must exhibit excellent passivation and low contact resistivity values. The index of refraction of polydimethylsiloxane (PDMS) is calculated to be 1.405-1.415 for 600-800 nm and 1.475-1.505 is calculated for ethylene vinyl acetate (EVA). The absorption coefficient is calculated to be less than 0.1 cm-1 for PDMS and less than 0.5 cm-1 for EVA at wavelengths less than 1000 nm. Polysilicon / SiOx passivated contact symmetric structures grown using plasma-enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition (LPCVD) and subsequently doped using P, B, and Ga spin-on dopants are fabricated, and their passivation and contact properties are analyzed. The n-type, P-doped passivated contact gives an implied open circuit voltage (iVOC) of 708 mV in PECVD and 727 mV in LPCVD. The p-type, B-doped passivated contact gives an iVOC of 667 mV in PECVD and 689 mV in LPCVD. The p-type, Ga-doped passivated contact, which has not been previously reported, gives an iVOC of 731 mV in PECVD and 714 mV in LPCVD. For the n-type, P-doped contact a low metal to polysilicon contact resistivity of 23.8 mO-cm2 was measured for Al on PECVD and 15.8 mO-cm2 was measured for Al on LPCVD. For the p-type, B-doped contact a low metal to polysilicon contact resistivity of 0.3 mO-cm2 was measured for Al on LPCVD. These results are encouraging for the processing of passivated interdigitated back contact solar cells, and present a route towards high-efficiency Si PV at low cost.

Enhanced fluoride removal by La-doped Li/Al layered double hydroxides.

PubMed

Cai, Jianguo; Zhao, Xin; Zhang, Yanyang; Zhang, Quanxing; Pan, Bingcai

2018-01-01

In this study La intercalated Li/Al layered double hydroxide (LDH) was developed for efficient water defluoridation. The La-modified material, i.e., La doped Li/Al-LDH, exhibits more preferable fluoride adsorption than Li/Al-LDH in a broad pH range of 5-9, with the working capacity twice of the latter and seven times of magnitude higher than activated alumina. The fluoride removal kinetics is well fitted by pseudo-second order model, and the adsorption isotherm is well described by Freundlich model. Effect of pH and competing ions was examined during fluoride sequestration. The underlying mechanism for such enhanced adsorption of fluoride by La doped Li/Al-LDH was further revealed based on XPS and FTIR analysis. The presence of La and Al was found to be responsible for the satisfactory defluoridation of La doped Li/Al-LDH, and chloride replacement with fluoride occurred from both LDHs during fluoride adsorption. Also, the capacity of La doped Li/Al-LDH could be refreshed by alkaline solution (pH = 12) for cyclic runs. All the results implied that La doped Li/Al-LDH could serve asa potential adsorbent for efficient fluoride removal from water. Copyright © 2017 Elsevier Inc. All rights reserved.

Comparative study for highly Al and Mg doped ZnO thin films elaborated by sol gel method for photovoltaic application

NASA Astrophysics Data System (ADS)

El Hallani, G.; Nasih, S.; Fazouan, N.; Liba, A.; Khuili, M.; Sajieddine, M.; Mabrouki, M.; Laanab, L.; Atmani, E. H.

2017-04-01

Transparent conducting oxides such as ZnO doped with Al or Mg are commonly used in solar cells, light emitting diodes, photodetectors, and ultraviolet laser diodes. In our work, we focus on a comparative study of the structural, optical, and electrical properties of ZnO films highly doped with Al (AZO) and Mg (MZO). These films are deposited on glass substrates by the sol-gel spin coating method. The doping concentrations for Al and Mg are fixed to 5%-30%. The XRD spectra indicate that all the samples are polycrystalline with hexagonal wurtzite structures, exhibiting a preferred orientation along the (002) plane. Low degradation in crystallinity was observed for MZO even at a Mg concentration of 30%. The MgO phase started to appear compared to Al-doped layers where smaller grains are formed inducing a deterioration in the films just after doping but no new phase appeared. This result is in agreement with other experimental results [J. K. Rath, Sol. Energy Mater. Sol. Cells 76, 431-487 (2003); Morris et al., J. Appl. Phys. 67, 1079-1087 (1990)]. By AFM analysis, the results indicate a significantly rough surface for MZO compared to AZO films. For equal Al and Mg dopant concentrations, we observe that the transmittance spectra of MZO thin films are wider than those of AZO, indicating a shift toward shorter wavelengths with an optical gap energy equal to 3.67 eV. The electrical measurements of AZO and MZO thin films were made using the I-V characteristic obtained by the four probe method. All the films present an ohmic behavior. The conductivity and the mobility of AZO films were found to be better than those of MZO.

First principles study of CuAlO2 doping with S

NASA Astrophysics Data System (ADS)

Gao, Haigen; Zhou, Jian; Lu, Minghui

2010-07-01

We study the electronic properties of CuAlO2 doped with S by the first principles calculations and find that the band gap of CuAlO2 is reduced after the doping. At the same time, the effective masses are also reduced and the density of states could cross the Fermi level. These results show that the conductivity of CuAlO2 could be enhanced by doping the impurities of S, which needs to be further studied.

Magnetic properties of undoped and Al doped layered α-Co(OH)2

NASA Astrophysics Data System (ADS)

Gupta, Anu; Tiwari, S. D.

2017-11-01

Undoped, 10% and 20% Al doped samples of layered hexagonal α-Co(OH)2 are synthesized. X-ray diffraction patterns show that the samples are nanocrystalline with average crystallite size 15 nm. Fourier transform infrared spectroscopy and thermogravimetric analysis are performed to establish molecular formula of samples. Analysis of susceptibility χ as a function of temperature T (5-300 K) data indicates for ferromagnetic transitions in the system at lower temperatures. Curie transition temperature TC for undoped, 10% and 20% Al doped α-Co(OH)2 are found to be 9, 7.5 and 6.0 K respectively. Fitting of χ vs. T data for T >TC to the high temperature series yields strength of intralayer and interlayer exchange interactions among Co2+ ions. For undoped sample values of these interactions are estimated to be 1.070 and 0.240 K respectively. Strength of these interactions decrease with increasing concentration of Al3+ ions in the lattice. Magnetization as a function of applied magnetic field (up to ± 50 kG) data confirm ferromagnetic nature of the samples at 5 K.

Temperature Sensing Above 1000 C Using Cr-Doped GdAlO3 Spin-Allowed Broadband Luminescence

NASA Technical Reports Server (NTRS)

Eldridge, Jeffrey I.; Chambers, Matthew D.

2012-01-01

Cr-doped GdAlO3 (Cr:GdAlO3) is shown to produce remarkably high-intensity spin-allowed broadband luminescence with sufficiently long decay times to make effective luminescence-decay-time based temperature measurements above 1000 C. This phosphor is therefore an attractive alternative to the much lower luminescence intensity rare-earth-doped thermographic phosphors that are typically utilized at these elevated temperatures. In particular, Cr:GdAlO3 will be preferred over rare-earth-doped phosphors, such as Dy:YAG, at temperatures up to 1200 C for intensity-starved situations when the much lower emission intensity from rare-earth-doped phosphors is insufficient for accurate temperature measurements in the presence of significant radiation background. While transition-metal-doped phosphors such as Cr:Al2O3 (ruby) are known to exhibit high luminescence intensity at low dopant concentrations, quenching due to nonradiative decay pathways competing with the (sup 2)E to (sup 4)A(sub 2) radiative transition (R line) has typically restricted their use for temperature sensing to below 600 C. Thermal quenching of the broadband (sup 4)T(sub 2) to (sup 4)A(sub 2) radiative transition from Cr:GdAlO3, however, is delayed until much higher temperatures (above 1000 C). This spin-allowed broadband emission persists to high temperatures because the lower-lying (sup 2)E energy level acts as a reservoir to thermally populate the higher shorter-lived (sup 4)T(sub 2) energy level and because the activation energy for nonradiative crossover relaxation from the (sup 4)T(sub 2) level to the (sup 4)A(sub 2) ground state is high. The strong crystal field associated with the tight bonding of the AlO6 octahedra in the GdAlO3 perovskite structure is responsible for this behavior.

Doping-Induced Interband Gain in InAs/AlSb Quantum Wells

NASA Technical Reports Server (NTRS)

Kolokolov, K. I.; Ning, C. Z.

2005-01-01

A paper describes a computational study of effects of doping in a quantum well (QW) comprising a 10-nm-thick layer of InAs sandwiched between two 21-nm-thick AlSb layers. Heretofore, InAs/AlSb QWs have not been useful as interband gain devices because they have type-II energy-band-edge alignment, which causes spatial separation of electrons and holes, thereby leading to weak interband dipole matrix elements. In the doping schemes studied, an interior sublayer of each AlSb layer was doped at various total areal densities up to 5 X 10(exp 12) / square cm. It was found that (1) proper doping converts the InAs layer from a barrier to a well for holes, thereby converting the heterostructure from type II to type I; (2) the resultant dipole matrix elements and interband gains are comparable to those of typical type-I heterostructures; and (3) dipole moments and optical gain increase with the doping level. Optical gains in the transverse magnetic mode can be almost ten times those of other semiconductor material systems in devices used to generate medium-wavelength infrared (MWIR) radiation. Hence, doped InAs/AlSb QWs could be the basis of an alternative material system for devices to generate MWIR radiation.

Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

NASA Technical Reports Server (NTRS)

Wang, Yang

1994-01-01

We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

Optical properties of 3d transition-metal-doped MgAl2O4 spinels

NASA Astrophysics Data System (ADS)

Izumi, K.; Miyazaki, S.; Yoshida, S.; Mizokawa, T.; Hanamura, E.

2007-08-01

Strong emission bands in the visible region are observed in MgAl2O4 crystals doped with transition-metal ions under excitation at the band-to-band transitions. We report optical responses of Cr-, Co-, and Ni-doped MgAl2O4 and present optical models for M -doped MgAl2O4 ( M=Ti , V, Cr, Mn, Co, and Ni) to describe the charge-transfer transitions and the transitions between multiplet levels of 3d electrons, which are observed competitively or coexisting, depending on the number of 3d electrons. While the optical responses of Cr- and Ni-doped MgAl2O4 are dominated by the multiplet-multiplet transitions, those of Ti- and V-doped MgAl2O4 are governed by the charge-transfer transitions. The two kinds of transitions coexist in the Mn- and Co-doped MgAl2O4 . These behaviors are well understood based on the numerical results of unrestricted Hartree-Fock approximation.

Aluminum concentration and substrate temperature in chemical sprayed ZnO:Al thin solid films

NASA Astrophysics Data System (ADS)

Lozada, Erick Velázquez; Castañeda, L.; Aguilar, E. Austria

2018-02-01

The continuous interest in the synthesis and properties study of materials has permitted the development of semiconductor oxides. Zinc oxide (ZnO) with hexagonal wurzite structure is a wide band gap n-type semiconductor and interesting material over a wide range. Chemically sprayed aluminium-doped zinc oxide thin films (ZnO:Al) were deposited on soda-lime glass substrates starting from zinc pentanedionate and aluminium pentanedionate. The influence of both the dopant concentration in the starting solution and the substrate temperature on the composition, morphology, and transport properties of the ZnO:Al thin films were studied. The structure of all the ZnO:Al thin films was polycrystalline, and variation in the preferential growth with the aluminium content in the solution was observed: from an initial (002) growth in films with low Al content, switching to a predominance of (101) planes for heavily dopant regime. The crystallite size was found to decrease with doping concentration and range from 33 to 20 nm. First-order Raman scattering from ZnO:Al, all having the wurtzite structure. The assignments of the E2 mode in ZnO:Al differ from previous investigations. The film composition and the dopant concentration were determined by Auger Electron Spectroscopy (AES); these results showed that the films are almost stoichiometric ZnO. The optimum deposition conditions leading to conductive and transparent ZnO:Al thin films were also found. In this way a resistivity of 0.03 Ω-cm with a (002) preferential growth, were obtained in optimized ZnO:Al thin films.

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

NASA Astrophysics Data System (ADS)

Materlik, Robin; Künneth, Christopher; Falkowski, Max; Mikolajick, Thomas; Kersch, Alfred

2018-04-01

III-valent dopants have shown to be most effective in stabilizing the ferroelectric, crystalline phase in atomic layer deposited, polycrystalline HfO2 thin films. On the other hand, such dopants are commonly used for tetragonal and cubic phase stabilization in ceramic HfO2. This difference in the impact has not been elucidated so far. The prospect is a suitable doping to produce ferroelectric HfO2 ceramics with a technological impact. In this paper, we investigate the impact of Al, Y, and La doping, which have experimentally proven to stabilize the ferroelectric Pca21 phase in HfO2, in a comprehensive first-principles study. Density functional theory calculations reveal the structure, formation energy, and total energy of various defects in HfO2. Most relevant are substitutional electronically compensated defects without oxygen vacancy, substitutional mixed compensated defects paired with a vacancy, and ionically compensated defect complexes containing two substitutional dopants paired with a vacancy. The ferroelectric phase is strongly favored with La and Y in the substitutional defect. The mixed compensated defect favors the ferroelectric phase as well, but the strongly favored cubic phase limits the concentration range for ferroelectricity. We conclude that a reduction of oxygen vacancies should significantly enhance this range in Y doped HfO2 thin films. With Al, the substitutional defect hardly favors the ferroelectric phase before the tetragonal phase becomes strongly favored with the increasing concentration. This could explain the observed field induced ferroelectricity in Al-doped HfO2. Further Al defects are investigated, but do not favor the f-phase such that the current explanation remains incomplete for Al doping. According to the simulation, doping alone shows clear trends, but is insufficient to replace the monoclinic phase as the ground state. To explain this fact, some other mechanism is needed.

Zero-reabsorption doped-nanocrystal luminescent solar concentrators.

PubMed

Erickson, Christian S; Bradshaw, Liam R; McDowall, Stephen; Gilbertson, John D; Gamelin, Daniel R; Patrick, David L

2014-04-22

Optical concentration can lower the cost of solar energy conversion by reducing photovoltaic cell area and increasing photovoltaic efficiency. Luminescent solar concentrators offer an attractive approach to combined spectral and spatial concentration of both specular and diffuse light without tracking, but they have been plagued by luminophore self-absorption losses when employed on practical size scales. Here, we introduce doped semiconductor nanocrystals as a new class of phosphors for use in luminescent solar concentrators. In proof-of-concept experiments, visibly transparent, ultraviolet-selective luminescent solar concentrators have been prepared using colloidal Mn(2+)-doped ZnSe nanocrystals that show no luminescence reabsorption. Optical quantum efficiencies of 37% are measured, yielding a maximum projected energy concentration of ∼6× and flux gain for a-Si photovoltaics of 15.6 in the large-area limit, for the first time bounded not by luminophore self-absorption but by the transparency of the waveguide itself. Future directions in the use of colloidal doped nanocrystals as robust, processable spectrum-shifting phosphors for luminescent solar concentration on the large scales required for practical application of this technology are discussed.

Synthesis of highly conductive thin-walled Al-doped ZnO single-crystal microtubes by a solid state method

NASA Astrophysics Data System (ADS)

Hu, Shuopeng; Wang, Yue; Wang, Qiang; Xing, Cheng; Yan, Yinzhou; Jiang, Yijian

2018-06-01

ZnO has attracted considerable attention in fundamental studies and practical applications for the past decade due to its outstanding performance in gas sensing, photocatalytic degradation, light harvesting, UV-light emitting/lasing, etc. The large-sized thin-walled ZnO (TW-ZnO) microtube with stable and rich VZn-related acceptors grown by optical vapor supersaturated precipitation (OVSP) is a novel multifunctional optoelectronic material. Unfortunately, the OVSP cannot achieve doping due to the vapor growth process. To obtain doped TW-ZnO microtubes, a solid state method is introduced in this work to achieve thin-walled Al-doping ZnO (TW-ZnO:Al) microtubes with high electrical conductivity. The morphology and microstructures of ZnO:Al microtubes are similar to undoped ones. The Al3+ ions are confirmed to substitute Zn2+ sites and Zn(0/-1) vacancies in the lattice of ZnO by EDS, XRD, Raman and temperature-dependent photoluminescence analyses. The Al dopant acting as a donor level offers massive free electrons to increase the carrier concentrations. The resistivity of the ZnO:Al microtube is reduced down to ∼10-3 Ω·cm, which is one order of magnitude lower than that of the undoped microtube. The present work provides a simple way to achieve doped ZnO tubular components for potential device applications in optoelectronics.

Influence of annealing temperature on optical properties of Al doped ZnO nanoparticles via sol-gel methods

NASA Astrophysics Data System (ADS)

Rashid, Affa Rozana Abd; Hazwani, Tuan Nur; Mukhtar, Wan Maisarah; Taib, Nur Athirah Mohd

2018-06-01

Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. The effect of dopant concentration of Al, heating treatment and annealing in reducing atmosphere on the optical properties of the thin films is discussed. Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine are used as precursor, solvent and stabilizer. In the case of AZO, aluminum nitrate nanohydrate is added to the precursor solution with an atomic percentage equal to 0 %, 1 %, 2 % and 3 % of Al. The multi thin layers are transformed into ZnO upon annealing at 450 °C and 500 °C. The optical properties such as transmittance, absorbance, band gap and refractive index of the thin films have been investigated by using UV-Visible Spectroscopy (UV-Vis). The results show that the effect of aluminium dopant concentration on the optical properties is depend on the post-heat treatment of the films. By doping with Al, the transmittance spectra in visible range increased and widen the band gap of ZnO which might due to Burstein-moss effects.

Influence of Electron Doping on Magnetic Order in CeRu 2Al 10

DOE PAGES

Kobayashi, Riki; Kaneko, Koji; Saito, Kotaro; ...

2014-09-17

The effect of electron doping by the substitution of Rh for Ru on unconventional magnetic order in CeRu 2Al 10 was investigated via neutron powder diffraction. In Ce(Ru 1-xRh x) 2Al 10 with x = 0.05, 0.12, and 0.2, reorientation of the ordered moment from the c- to the a-axis takes place in all samples, while the ordering vector q=(0 1 0) remains unchanged within this concentration range. The moment reorientation is accompanied by an enhancement in its size by a factor of ~2.4, from μ=0.43 μ B at x=0 to μ =1.06, 1.04, and 1.02 μ B for x=0.05,more » 0.12 and 0.2, respectively. The continuous decrease in N´eel temperature T 0(T N), despite an abrupt increase in μ , underlines the strong anisotropy in the exchange interaction in CeRu 2Al 10, and the fact that this anisotropy is easily suppressed by electron doping.« less

A clear effect of charge compensation through Na{sup +} co-doping on the luminescence spectra and decay kinetics of Nd{sup 3+}-doped CaAl{sub 4}O{sub 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puchalska, M., E-mail: malgorzata.puchalska@chem.uni.wroc.pl; Watras, A.

2016-06-15

We present a detailed analysis of luminescence behavior of singly Nd{sup 3+} doped and Nd{sup 3+}, Na{sup +} co-doped calcium aluminates powders: Ca{sub 1−x}Nd{sub x}Al{sub 4}O{sub 7} and Ca{sub 1−2x}Nd{sub x}Na{sub x}Al{sub 4}O{sub 7} (x=0.001–0.1). Relatively intense Nd{sup 3+} luminescence in IR region corresponding to typical {sup 4}F{sub 3/2}→{sup 4}I{sub J} (J=9/2–13/2) transitions with maximum located at about 1079 nm was obtained in all samples on direct excitation into f–f levels. The effect of dopant concentration and charge compensation by co-doping with Na{sup +} ions on morphology and optical properties were studied. The results show that both, the Nd{sup 3+}more » concentration and the alkali metal co-doping affected the optical properties but had no influence on the powders morphology. The studies of luminescence spectra (298 and 77 K) in a function of dopant concentration showed an increasing distortion of the local symmetry of Nd{sup 3+}with raising activator content due to certain defects created in the crystal lattice. On the other hand Na{sup +} addition led to significant narrowing of absorption and luminescence bands and also a reduction of the number of their components, showing smaller disturbance of Nd{sup 3+} ions local symmetries. Consequently, charge compensated by Na{sup +} co-doping materials showed significantly enhanced Nd{sup 3+} luminescence. The decrease of emission intensity and luminescence lifetimes with increase of activator concentration was attributed mainly to phonon-assisted cross-relaxation processes between Nd{sup 3+} ions. Analysis with Inokuti–Hirayama model indicated dipole–dipole mechanism of ion-ion interaction. Na{sup +} addition led to much smaller concentration quenching due to smaller clustering of dopant ions in CaAl{sub 4}O{sub 7} lattice.« less

High performance unipolar MoTe2 field effect transistors enabled by doping and Al2O3 capping

NASA Astrophysics Data System (ADS)

Qu, Deshun; Liu, Xiaochi; Ahmed, Faisal; Yoo, Won Jong

We carry out the first systematic experiment on carrier type modulation of MoTe2 FET in this work. unipolar p- and n-type MoTe2 FETs with 105 and 106 on-off ratios are achieved through rapid thermal annealing (RTA) and Benzyl Viologen (BV) doping respectively. By varying the vacuum level in RTA chamber before annealing and BV dopant concentration, annealing condition, both hole and electron doping concentration can be modulated in a wide range from slight doping to degenerate like doping. Furthermore, Al2O3 is deposited onto the device surfaces for the mobility engineering. Hole and electron mobilities are improved to 62 cm2/Vs and 82 cm2/Vs respectively after Al2O3 capping; they are among the highest carrier mobilities of MoTe2 transistors ever obtained. A lateral homogeneous MoTe2 p-n diode is fabricated combining the electron and hole doping techniques, the device displays excellent diode properties with a high rectification ratio of 104 at 0 gate bias and an ideality factor of 1.2. This work was supported by the Global Research Laboratory and Global Frontier R&D Programs at the Center for Hybrid Interface Materials, both funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF).

Atomic layer deposition of highly-doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Roenn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei

2016-05-01

Recently, rare-earth doped waveguide amplifiers (REDWAs) have drawn significant attention as a promising solution to on-chip amplification of light in silicon photonics and integrated optics by virtue of their high excited state lifetime (up to 10 ms) and broad emission spectrum (up to 200 nm) at infrared wavelengths. In the family of rare-earths, at least erbium, holmium, thulium, neodymium and ytterbium have been demonstrated to be good candidates for amplifier operation at moderate concentrations (< 0.1 %). However, efficient amplifier operation in REDWAs is a very challenging task because high concentration of ions (<0.1%) is required in order to produce reasonable amplification over short device length. Inevitably, high concentration of ions leads to energy-transfer between neighboring ions, which results as decreased gain and increased noise in the amplifier system. It has been shown that these energy-transfer mechanisms in highly-doped gain media are inversely proportional to the sixth power of the distance between the ions. Therefore, novel fabrication techniques with the ability to control the distribution of the rare-earth ions within the gain medium are urgently needed in order to fabricate REDWAs with high efficiency and low noise. Here, we show that atomic layer deposition (ALD) is an excellent technique to fabricate highly-doped (<1%) RE:Al2O3 gain materials by using its nanoscale engineering ability to delicately control the incorporation of RE ions during the deposition. In our experiment, we fabricated Er:Al2O3 and Tm:Al2O3 thin films with ALD by varying the concentration of RE ions from 1% to 7%. By measuring the photoluminescence response of the fabricated samples, we demonstrate that it is possible to incorporate up to 5% of either Er- or Tm-ions in Al2O3 host before severe quenching occurs. We believe that this technique can be extended to other RE ions as well. Therefore, our results show the exceptionality of ALD as a deposition technique for

A comparative study on magnetism in Zn-doped AlN and GaN from first-principles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liang; Wang, Lingling, E-mail: llwang@hnu.edu.cn, E-mail: xiaowenzhi@hnu.edu.cn; Huang, Weiqing

2014-09-14

First-principles calculations have been used to comparatively investigate electronic and magnetic properties of Zn-doped AlN and GaN. A total magnetic moment of 1.0 μ B{sub B} induced by Zn is found in AlN, but not in GaN. Analyses show that the origin of spontaneous polarization not only depend on the localized atomic orbitals of N and sufficient hole concentration, but also the relative intensity of the covalency of matrix. The relatively stronger covalent character of GaN with respect to AlN impedes forming local magnetic moment in GaN matrix. Our study offers a fresh sight of spontaneous spin polarization in d⁰more » magnetism. The much stronger ferromagnetic coupling in c-plane of AlN means that it is feasible to realize long-range ferromagnetic order via monolayer delta-doping. This can apply to other wide band-gap semiconductors in wurtzite structure.« less

Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

NASA Astrophysics Data System (ADS)

Jiang, Baojiang; Tian, Chungui; Wang, Lei; Sun, Li; Chen, Chen; Nong, Xiaozhen; Qiao, Yingjie; Fu, Honggang

2012-02-01

In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 °C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

Parameters optimization for synthesis of Al-doped ZnO nanoparticles by laser ablation in water

NASA Astrophysics Data System (ADS)

Krstulović, Nikša; Salamon, Krešimir; Budimlija, Ognjen; Kovač, Janez; Dasović, Jasna; Umek, Polona; Capan, Ivana

2018-05-01

Al-doped ZnO crystalline colloidal nanoparticles were synthesized by a laser ablation of ZnO:Al2O3 in MilliQ water. Experiments were performed systematically by changing the number of applied laser pulses and laser output energy with the aim to affect the nanoparticle size, composition (Al/Zn ratio) and characteristics (band-gap, crystallinity). Distinctly, set of nanoparticle syntheses was performed in deionized water for comparison. SEM investigation of colloidal nanoparticles revealed that the formed nanoparticles are 30 nm thick discs with average diameters ranging from 450 to 510 nm. It was found that craters in the target formed during the laser ablation influence the size of synthesized colloidal nanoparticles. This is explained by efficient nanoparticle growth through diffusion process which take place in spatially restricted volume of the target crater. When laser ablation takes place in deionized water the synthesized nanoparticles have a mesh-like structure with sparse concentration of disc-like nanoparticles. Al/Zn ratio and band-gap energy of nanoparticles are highly influenced by the number and output energy of applied laser pulses. In addition, the procedure how to calculate the concentration of colloidal nanoparticles synthesized by laser ablation in liquids is proposed. The Al-doped ZnO colloidal nanoparticles properties were obtained using different techniques like scanning electron microscopy, optical microscopy, energy-dispersive X-ray spectroscopy, grazing-incidence X-ray diffraction, photoabsorption, photoluminescence and X-ray photoelectron spectroscopy.

Novel Al-doped carbon nanotubes with adsorption and coagulation promotion for organic pollutant removal.

PubMed

Kang, Dongjuan; Yu, Xiaolin; Ge, Maofa; Xiao, Feng; Xu, Hui

2017-04-01

Al-doped carbon nanotubes (Al-doped CNTs) were prepared as a multifunctional integrated material of adsorbent and coagulant aid for organic pollutant removal from aqueous solution. It was observed that aluminum species were dispersed homogeneously on the surface of CNTs, and mainly anchored onto defect structures of the CNTs. The introduction of aluminium efficiently improved adsorption ability for methyl orange (MO) onto the CNTs, and maximum adsorption capacity calculated from the Langmuir isotherm model can reach 69.7mg/g. The MO adsorption kinetics can be better described by the pseudo-second-order and pore diffusion kinetic models, and the diffusion of MO anions into pores of the Al-doped CNT adsorbent should be the rate-determining step. Thermodynamic analyses indicated that the adsorption of MO onto Al-CNTs-2.0 was endothermic and spontaneous. Moreover, adsorption capacity for MO on the Al-doped CNTs was evidently dependent on the CNT dose, solution pH and adsorbent dose. From the perspective of low-cost and multifunctional, suspension obtained during the Al-doped CNT adsorbent preparation, was tested as coagulant to remove humic acid (HA). A significant observation is that the suspension exhibited an excellent coagulation performance for HA, because abundant aluminous polymer and Al-doped CNTs existed in the suspension. Copyright © 2016. Published by Elsevier B.V.

Transparent Al+3 doped MgO thin films for functional applications

NASA Astrophysics Data System (ADS)

Maiti, Payel; Sekhar Das, Pradip; Bhattacharya, Manjima; Mukherjee, Smita; Saha, Biswajit; Mullick, Awadesh Kumar; Mukhopadhyay, Anoop Kumar

2017-08-01

The present work reports the utilization of a relatively simple, cost effective sol-gel technique based route to synthesize highly transparent, spin coated 4.1 at% Al+3 doped MgO thin films on quartz substrates. The films were characterized by XRD, XPS, Raman spectroscopy, and SIMS techniques. The microstructures were characterized by FESEM and TEM while the nanomechanical properties were assessed by the nanoindentation technique. Finally the optical transmittance was measured by UV-vis technique. The x-ray diffraction (XRD) study suggests the crystal facet (2 0 0) of MgO lattice to be distorted after incorporation of Al+3 into MgO lattice. From FESEM the doped films were found to have a dense microstructure with a crystallite size of about 20 nm as revealed by the TEM studies. Nanoindentation measurements indicated drastic increase of elastic modulus for the Al+3 doped MgO thin films by ~73% compared to that of the pristine MgO thin films along with retaining the nanohardness at ~8 GPa. The transmittance of Al+3 doped MgO thin films in the visible range was significantly higher (~99%) than that of pristine MgO (~90%) thin films. The films also had a relatively higher refractive index of about 1.45 as evaluated from the optical properties. The enhanced transmittance as well as the improved elastic modulus of Al+3 doped MgO thin films suggest its promising candidature in magnetic memory devices and as buffer layers of solar cells.

Electron irradiation response on Ge and Al-doped SiO 2 optical fibres

NASA Astrophysics Data System (ADS)

Yaakob, N. H.; Wagiran, H.; Hossain, I.; Ramli, A. T.; Bradley, D. A.; Hashim, S.; Ali, H.

2011-05-01

This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

Mg,Ce co-doped Lu2Gd1(Ga,Al)5O12 by micro-pulling down method and their luminescence properties

NASA Astrophysics Data System (ADS)

Kamada, Kei; Yamaguchi, Hiroaki; Yoshino, Masao; Kurosawa, Shunsuke; Shoji, Yasuhiro; Yokota, Yuui; Ohashi, Yuji; Pejchal, Jan; Nikl, Martin; Yoshikawa, Akira

2018-04-01

The effects of Mg co-doping on the scintillation properties of Ce:Lu2Gd1(Ga,Al)5O12 (LGGAG) single crystals with different Ga/Al ratios were investigated. Mg co-doped and non co-doped Ce:LGGAG single crystals were grown by the micro-pulling down (µ-PD) method and then cut, polished and annealed for each measurement. Absorption spectra, radioluminescence (RL) spectra, pulse height spectra, and scintillation decay were measured to reveal the effect of Mg co-doping. Ce4+ charge transfer (CT) absorption band peaking at ∼260 nm was observed in Mg co-doped samples, which is in good agreement with previous reports for the Ce4+ CT absorption band in other garnet-based crystals. The scintillation decay time tended to be accelerated and the light yield tended to be decreased by Mg co-doping at higher Ga concentrations.

Influence of Al grain boundaries segregations and La-doping on embrittlement of intermetallic NiAl

NASA Astrophysics Data System (ADS)

Kovalev, Anatoly I.; Wainstein, Dmitry L.; Rashkovskiy, Alexander Yu.

2015-11-01

The microscopic nature of intergranular fracture of NiAl was experimentally investigated by the set of electron spectroscopy techniques. The paper demonstrates that embrittlement of NiAl intermetallic compound is caused by ordering of atomic structure that leads to formation of structural aluminum segregations at grain boundaries (GB). Such segregations contain high number of brittle covalent interatomic bonds. The alloying by La increases the ductility of material avoiding Al GB enrichment and disordering GB atomic structure. The influence of La alloying on NiAl mechanical properties was investigated. GB chemical composition, atomic and electronic structure transformations after La doping were investigated by AES, XPS and EELFS techniques. To qualify the interatomic bonds metallicity the Fermi level (EF) position and electrons density (neff) in conduction band were determined in both undoped and doped NiAl. Basing on experimental results the physical model of GB brittleness formation was proposed.

Highly Al-doped TiO{sub 2} nanoparticles produced by Ball Mill Method: structural and electronic characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santos, Desireé M. de los, E-mail: desire.delossantos@uca.es; Navas, Javier, E-mail: javier.navas@uca.es; Sánchez-Coronilla, Antonio

2015-10-15

Highlights: • Highly Al-doped TiO{sub 2} nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO{sub 2} nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy.more » The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti{sup 4+} ions by Al{sup 3+} in the TiO{sub 2} lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature.« less

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO{sub 2} thin films grown by the atomic layer deposition technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kassmi, M.; LMOP, El Manar University, Tunis 2092; Pointet, J.

2016-06-28

Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO{sub 2} rutile films which are deposited on RuO{sub 2} by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz–100 kHz range, for ac electric fields up to 1 MV{sub rms}/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreasesmore » the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MV{sub rms}/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.« less

Effect of the PVA (polyvinyl alcohol) concentration on the optical properties of Eu-doped YAG phosphors

NASA Astrophysics Data System (ADS)

Hora, Daniela A.; Andrade, Adriano B.; Ferreira, Nilson S.; Teixeira, Verônica C.; dos S. Rezende, Marcos V.

2016-10-01

The influence of the polyvinyl alcohol (PVA) concentration on the synthesis and structural, morphological and optical properties of Y3Al5O13: Eu (Eu-doped YAG) was systematically investigated in this work. The final concentration of PVA in the preparation step influenced the crystallite size and also the degree of particle agglomeration in Eu-doped YAG phosphors. X-ray excited optical luminescence (XEOL) emission spectra results indicated typical Eu3+ emission lines and an abnormally intense 5D0 → 7F4. The intensity parameters Ω2 and Ω4 were calculated and indicated the PVA concentration affects the ratio Ω2:Ω4. X-ray absorption spectroscopy (XAS) results showed Eu valence did not change and the symmetry around the Eu3+ is influenced by the PVA concentration. XEOL-XAS showed the luminescence increases as a function of energy.

First-principles study of nitrogen-doped CuAlO2

NASA Astrophysics Data System (ADS)

Xu, Ying; Ao, Zhi Min; Yuan, Ding Wang

2012-08-01

The electronic structure and formation energies of N-doped CuAlO2 are studied using first-principles calculations. It is found that, when a N atom is doped into CuAlO2, the N atom prefers to substitute an O atom rather than to occupy an interstitial site of the Cu layer. The NO acts as a shallow accepter while the Ni acts as a deep accepter. The results of the electronic structure show that the N-doping doesn't alter the band gap of CuAlO2 for the both cases. In the substitutional case, the N impurity states occur at the top of valance band maximum (VBM), which provides holes and increases the p-type conductivity. However, in the interstitial case, the N impurity states occur in the middle of the band gap, which are more localized and this indicates that it is not good for p-type conductivity.

Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

NASA Astrophysics Data System (ADS)

Galazka, Zbigniew; Ganschow, Steffen; Fiedler, Andreas; Bertram, Rainer; Klimm, Detlef; Irmscher, Klaus; Schewski, Robert; Pietsch, Mike; Albrecht, Martin; Bickermann, Matthias

2018-03-01

We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-Ga2O3 crystal structure strongly depends on O2 concentration in the growth atmosphere which has a noticeable impact on decomposition of Ga2O3 and Cr2O3, as well as on the charge state of Cr and Ce. Effective segregation coefficients for Cr are in the range of 3.1-1.5 at 7-24 vol% O2, while for Ce they are roughly below 0.01 at 1.5-34 vol% O2. The effective segregation coefficient for Al is 1.1 at 1.5-21 vol% O2. Both dopants Ce and Al have a thermodynamically stabilizing effect on β-Ga2O3 crystal growth by supressing decomposition. While Ce has no impact on the optical transmittance in the ultraviolet and visible regions, in Cr doped crystals we observe three absorption bands due to Cr3+ on octahedral Ga sites, one in the ultraviolet merging with the band edge absorption of β-Ga2O3 and two in the visible spectrum, for which we estimate the absorption cross sections. Al doping also does not induce dopant related absorption bands but clearly shifts the absorption edge as one expects for a solid-solution crystal Ga2(1-x)Al2xO3 still in the monoclinic phase. For the highest doping concentration (Ga1.9Al0.1O3) we estimate an increase of the energy gap by 0.11 eV.

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Panda, Padmalochan; Ramaseshan, R.; Krishna, Nanda Gopala; Dash, S.

2016-05-01

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N2 concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (HIT) of around 28.2 GPa for a nitrogen concentration of 25%.

High free carrier concentration in p-GaN grown on AlN substrates

NASA Astrophysics Data System (ADS)

Sarkar, Biplab; Mita, Seiji; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Tweedie, James; Bryan, Isaac; Bryan, Zachary; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

2017-07-01

A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm-3 and resistivity as low as 0.7 Ω cm are reported for p-GaN layers grown by metalorganic vapor phase epitaxy on single crystal AlN substrates. Temperature dependent Hall measurements confirmed a much lower activation energy, 60-80 mV, for p-GaN grown on AlN as compared to sapphire substrates; the lowering of the activation energy was due to screening of Coulomb potential by free carriers. It is also shown that a higher doping density (more than 5 × 1019 cm-3) can be achieved in p-GaN/AlN without the onset of self-compensation.

Electronic properties of B and Al doped graphane: A hybrid density functional study

NASA Astrophysics Data System (ADS)

Mapasha, R. E.; Igumbor, E.; Andriambelaza, N. F.; Chetty, N.

2018-04-01

Using a hybrid density functional theory approach parametrized by Heyd, Scuseria and Ernzerhof (HSE06 hybrid functional), we study the energetics, structural and electronic properties of a graphane monolayer substitutionally doped with the B (BCH) and Al (AlCH) atoms. The BCH defect can be integrated within a graphane monolayer at a relative low formation energy, without major structural distortions and symmetry breaking. The AlCH defect relaxes outward of the monolayer and breaks the symmetry. The density of states plots indicate that BCH doped graphane monolayer is a wide band gap semiconductor, whereas the AlCH defect introduces the spin dependent mid gap states at the vicinity of the Fermi level, revealing a metallic character with the pronounced magnetic features. We further examine the response of the Al dependent spin states on the multiple charge states doping. We find that the defect formation energy, structural and electronic properties can be altered via charge state modulation. The +1 charge doping opens an energy band gap of 1.75 eV. This value corresponds to the wavelength in the visible spectrum, suggesting an ideal material for solar cell absorbers. Our study fine tunes the graphane band gap through the foreign atom doping as well as via defect charge state modulation.

Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2015-12-14

Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{submore » 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.« less

Adsorption of formamide over pristine and Al-doped boron nitride nanosheets: A dispersion-corrected DFT study.

PubMed

Esrafili, Mehdi D; Mousavian, Parisasadat; Arjomandi Rad, Farzad

2018-06-01

Using the dispersion-corrected DFT calculations, different adsorption modes of formamide molecule are studied over the pristine and Al-doped boron nitride nanosheets (BNNS). It is found that the interaction between the Al atom and its neighboring N atoms in the Al-doped BNNS is very strong, which would hinder the dispersion and clustering of the Al atoms over the BNNS surface. Unlike the pristine nanosheet, the electronic properties of Al-doped BNNS are very sensitive to the formamide adsorption. The adsorption energies of formamide over the Al-doped sheet are in the range of -0.93 to -1.85 eV, which indicates the quite strong interaction of this molecule with the surface. Moreover, the dehydrogenation of formamide over the Al-doped BNNS is examined. According to our results, the N-H bond scission of formamide is more energetically favorable than the C-H one. Copyright © 2018 Elsevier Inc. All rights reserved.

Properties of NiZnO Thin Films with Different Amounts of Al Doping

NASA Astrophysics Data System (ADS)

Kayani, Zohra N.; Fatima, Gulnaz; Zulfiqar, Bareera; Riaz, Saira; Naseem, Shahzad

2017-10-01

Transparent Al-doped NiZnO thin films have been fabricated by sol-gel dip coating and investigated using scanning electron microscopy, x-ray diffraction analysis, ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry, vibrating-sample magnetometry, and Fourier-transform infrared spectroscopy. The Al-doped NiZnO films consisted of ZnO hexagonal and α-Al2O3 rhombohedral phases as the Al incorporation was gradually increased from 1 at.% up to 3 at.%. A decrease in the optical bandgap from 3.90 eV to 3.09 eV was observed for films grown with Al content of 1 at.% to 2.5 at.%, but at 3 at.% Al, the bandgap increased to 3.87 eV. Optical transmittance of 96% was achieved for these transparent oxide films. Study of their magnetic properties revealed that increasing Al percentage resulted in enhanced ferromagnetism. The saturated magnetization increased with increasing Al percentage. The ferromagnetic properties of Al-doped NiZnO are mediated by electrons. The surface of the deposited thin films consisted of nanowires, nanorods, porous surface, and grains.

Doping concentration dependence of microstructure and magnetic behaviours in Co-doped TiO2 nanorods

PubMed Central

2014-01-01

Co-doped titanium dioxide (TiO2) nanorods with different doping concentrations were fabricated by a molten salt method. It is found that the morphology of TiO2 changes from nanorods to nanoparticles with increasing doping concentration. The mechanism for the structure and phase evolution is investigated in detail. Undoped TiO2 nanorods show strong ferromagnetism at room temperature, whereas incorporating of Co deteriorates the ferromagnetic ordering. X-ray photoelectron spectroscopy (XPS) and electron spin resonance (ESR) results demonstrate that the ferromagnetism is associated with Ti vacancy. PMID:25593558

Computational materials design of negative effective U system in the hole-doped Delafossite of CuAlO2, AgAlO2 and AuAlO2

NASA Astrophysics Data System (ADS)

Nakanishi, Akitaka; Fukushima, Tetsuya; Uede, Hiroki; Katayama-Yoshida, Hiroshi

2015-03-01

In order to realize the super-high-TC superconductors (TC>1,000K) based on the general design rules for the negative Ueff system, we have performed computational materials design for theUeff<0 system in the hole-doped two-dimensional (2D) Delafossite CuAlO2, AgAlO2 and AuAlO2 from the first principles. We find the interesting chemical trend of TC in 2D and 3D systems; where the TC increases exponentially in the weak coupling regime (|Ueff (-0.44eV)|< W(2eV), W is the band width) for hole-doped CuFeS2, then the TC goes through a maximum when |Ueff (-4.88eV, -4.14eV)| ~ W (2.8eV, 3.5eV) for hole-doped AgAlO2 and AuAlO2, and the TC decreases with increasing |Ueff|in strong coupling regime, where |Ueff (-4.53eV)|> W(1.7eV) for hole-doped CuAlO2

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

PubMed Central

2011-01-01

The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant. In this study we will report on the properties of hole traps in a set of p-type Be-doped Al0.29Ga0.71As samples grown by molecular beam epitaxy on (100) and (311)A GaAs substrates using deep level transient spectroscopy (DLTS) technique. In addition, the effect of the level of Be-doping concentration on the hole deep traps is investigated. It was observed that with increasing the Be-doping concentration from 1 × 1016 to 1 × 1017 cm-3 the number of detected electrically active defects decreases for samples grown on (311)A substrate, whereas, it increases for (100) orientated samples. The DLTS measurements also reveal that the activation energies of traps detected in (311)A are lower than those in (100). From these findings it is expected that mobilities of 2DHGs in Be-doped GaAs-GaAlAs devices grown on (311)A should be higher than those on (100). PMID:21711687

Phase transformation and magnetic properties of MnAl powders prepared by elemental-doping and salt-assisted ball milling

NASA Astrophysics Data System (ADS)

Qian, Hui-Dong; Si, Ping-Zhan; Choi, Chul-Jin; Park, Jihoon; Cho, Kyung Mox

2018-05-01

The effects of elemental doping of Si and Fe on the ɛ→τ phase transformation and the magnetic properties of MnAl were studied. The magnetic powders of Si- and Fe-doped MnAl were prepared by using induction melting followed by water-quenching, annealing, and salt-assisted ball-milling. The Fe-doped MnAl powders are mainly composed of the L10-structured τ-phase, while the Si-doped MnAl are composed of τ-phase and a small fraction of γ2- and β-phases. A unique thin leaves-like morphology with thickness of several tens of nanometers and diameter size up to 500 nm were observed in the Si-doped MnAl powders. The Fe-doped MnAl powders show irregular shape with much larger dimensions in the range from several to 10 μm. The morphology difference of the samples was ascribed to the variation of the mechanical properties affected by different doping elements. The phase transformation temperatures of the ɛ-phase of the samples were measured. The doping of Fe decreases the onset temperature of the massive phase transformation in MnAl, while the Si-doping increases the massive phase transformation temperature. Both Fe and Si increase the Curie temperature of MnAl. A substantially enhanced coercivity up to 0.45 T and 0.42 T were observed in the ball-milled MnAl powders doped with Si and Fe, respectively.

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S.

2016-05-23

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thinmore » films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, Hyo-Soo; Choi, Nak-Jung; Kim, Kyoung-Bo

Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al contentmore » in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.« less

Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties

NASA Astrophysics Data System (ADS)

Moon, Eun-A.; Jun, Young-Kil; Kim, Nam-Hoon; Lee, Woo-Sun

2016-07-01

Photovoltaic applications require transparent conducting-oxide (TCO) thin films with high optical transmittance in the visible spectral region (380 - 780 nm), low resistivity, and high thermal/chemical stability. The ZnO thin film is one of the most common alternatives to the conventional indium-tin-oxide (ITO) thin film TCO. Highly transparent and conductive ZnO thin films can be prepared by doping with group III elements. Heavily-doped ZnO:Al (AZO) thin films were prepared by using the RF magnetron co-sputtering method with ZnO and Al targets to obtain better characteristics at a low cost. The RF sputtering power to each target was varied to control the doping concentration in fixed-thickness AZO thin films. The crystal structures of the AZO thin films were analyzed by using X-ray diffraction. The morphological microstructure was observed by using scanning electron microscopy. The optical transmittance and the band gap energy of the AZO thin films were examined with an UV-visible spectrophotometer in the range of 300 - 1800 nm. The resistivity and the carrier concentration were examined by using a Hall-effect measurement system. An excellent optical transmittance > 80% with an appropriate band gap energy (3.26 - 3.27 eV) and an improved resistivity (~10 -1 Ω·cm) with high carrier concentration (1017 - 1019 cm -3) were demonstrated in 350-nm-thick AZO thin films for thin-film photovoltaic applications.

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Nakatani, Katsutoshi; Kawai, Hiroji; Ao, Jin-Ping; Ohno, Yasuo

To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2 × 1017cm-3, p-type, which is well consistent with the Mg concentration obtained from secondary ion mass spectroscopy (SIMS) measurement.

Structural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol—gel dip coating process

NASA Astrophysics Data System (ADS)

Boukhenoufa, N.; Mahamdi, R.; Rechem, D.

2016-11-01

In this work, sol—gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

Optically pumped cerium-doped LiSrAlF.sub.6 and LiCaAlF.sub.6

DOEpatents

Marshall, Christopher D.; Payne, Stephen A.; Krupke, William F.

1996-01-01

Ce.sup.3+ -doped LiSrAlF.sub.6 crystals are pumped by ultraviolet light which is polarized along the c axis of the crystals to effectively energize the laser system. In one embodiment, the polarized fourth harmonic light output from a conventional Nd:YAG laser operating at 266 nm is arranged to pump Ce:LiSrAlF.sub.6 with the pump light polarized along the c axis of the crystal. The Ce:LiSrAlF.sub.6 crystal may be placed in a laser cavity for generating tunable coherent ultraviolet radiation in the range of 280-320 nm. Additionally, Ce-doped crystals possessing the LiSrAlF.sub.6 type of chemical formula, e.g. Ce-doped LiCaAlF.sub.6 and LiSrGaF.sub.6, can be used. Alternative pump sources include an ultraviolet-capable krypton or argon laser, or ultraviolet emitting flashlamps. The polarization of the pump light will impact operation. The laser system will operate efficiently when light in the 280-320 nm gain region is injected or recirculated in the system such that the beam is also polarized along the c axis of the crystal. The Ce:LiSrAlF.sub.6 laser system can be configured to generate ultrashort pulses, and it may be used to pump other devices, such as an optical parametric oscillator.

Synthesis and characterization of Ag-doped TiO2 nanotubes on Ti-6Al-4V and Ti-6Al-7Nb alloy

NASA Astrophysics Data System (ADS)

Ulfah, Ika Maria; Bachtiar, Boy M.; Murnandityas, Arnita Rut; Slamet

2018-05-01

The present paper is focused on comparative behavior of nanotubes growth on Ti-6Al-4V and Ti-6Al-7Nb alloy using electrochemical anodization method. These alloys were anodized in electrolytes solution containing glycerol, water and 0.5wt.% of NH4F. Silver-doped TiO2 nanotubes were synthesized using photo-assisted deposition (PAD) at various Ag loading concentration in 0.05 M, 0.10 M, and 0.15 M. The phase composition and morphological characteristics were investigated by XRD and FESEM/EDX, respectively. The surface wettability was measured by contact angle meter. The results showed that TiO2 nanotubes can be grown on these surface alloys. XRD profiles revealed crystal formation of anatase, rutile and Ag on these surface alloys. According to FESEM images, the average nanotube diameter of Ti-6Al-4V alloy and Ti-6Al-7Nb alloy are 134 nm and 120 nm, respectively. EDX-Mapping analysis showed that Ag desposited over surface of TiO2 nanotubes. The surface wettability indicated hydrophilicity properties on Ti-4Al-4V alloy and Ti-6Al-7Nb alloy surface. This study may contribute to the development of silver-doped TiO2 nanotubes on Ti-6Al-4V alloy and Ti-6Al-7Nb alloy can be considered in various photocatalytic applications such as biomedical devicesdue to photocatalytic mechanism and antibacterial ability.

THz emission of donor and acceptor doped GaAs/AlGaAs quantum well structures with inserted thin AlAs monolayer

NASA Astrophysics Data System (ADS)

van Dommelen, Paphavee; Daengngam, Chalongrat; Kalasuwan, Pruet

2018-04-01

In this paper, we explore THz range optical intersubband transition energies in a donor doped quantum well of a GaAs/AlGaAs system as a function of the insertion position of an AlAs monolayer in the GaAs quantum well. In simulated models, the optical transition energies between electron subband levels 1 and 2 were higher in the doped structure than in the undoped structure. This may be because the envelope wave function of the second electron subband strongly overlapped the envelope wave function of the first electron subband and influenced the optical intersubband transition between the two levels in the THz range. At different levels of bias voltage at the Schottky barrier on the donor doped structure, the electric field in the growth direction of the structure linearly increased the further away the AlAs monolayer was placed from the reference position. We also simulated the optical transition energies between acceptor energy levels of the acceptor doped structure as a function of the insertion position of the AlAs monolayer. The acceptor doped structure induced THz range emission whereas the undoped structure induced mid-IR emission.

Thermally stable and high reflectivity Al-doped silver thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Lee, Kwang; Joo, Sin Yong; Lee, Kee-Sun

2018-03-01

Thermally stable, high reflectance thin film coatings are indispensable in optoelectronic devices, especially as a potential back reflector for LEDs and solar cells. The silver has the drawback of agglomerating easily and poor thermal stability, which is limiting its application as a highly reflective coating in various optoelectronic applications. In this study, improved thermal stability by modification of the Ag film into an Ag/Al-doped Ag structure has been confirmed. In this paper, the surface morphology, optical reflectance, and thermal stability of the Ag/Al-doped Ag are investigated. The Ag/Al-doped Ag/sapphire films showed excellent thermal stability after annealing the films at 523 K with the highest reflectance about ∼86% as compared to the pure Ag films. The grain growth analysis results revealed that the Al-doping is effective to restrain the severe grain growth of silver films. The Auger electron spectroscopy results revealed that the outer diffusion of aluminum and the formation of Al-O bond at the outermost silver layer which is beneficial to retard the Ag grain growth.

KH+Ti co-doped NaAlH4 for high-capacity hydrogen storage

NASA Astrophysics Data System (ADS)

Wang, Ping; Kang, Xiang-Dong; Cheng, Hui-Ming

2005-10-01

A method for preparation of Ti-doped NaAlH4 with high hydrogen capacity was developed, in which the NaH/Al mixture was mechanically milled with a catalytic amount of KH together with metallic Ti. The addition of KH was found to result in a pronounced improvement in the dehydriding performance of the Na3AlH6/NaH+Al step. As a result, the practical cycling hydrogen capacity has been markedly enhanced from 3.3 wt % for the Ti-doped hydride to 4.7 wt % for KH+Ti co-doped material. Moreover, the pronounced enhancement on hydrogen capacity arising upon adding KH was observed to persist in the following dehydrogenation/hydrogenation cycles. Structural investigation shows that the addition of KH has led to a lattice expansion. Moreover, it was found that the enthalpy change of the Na3AlH6/NaH+Al decomposition step underwent a considerable decrease upon adding KH. Therefore, the observed property improvement may be ascribed to a favorable thermodynamic adjustment arising upon the addition of KH.

Auto-combustion synthesis and characterization of Mg doped CuAlO2 nanoparticles

NASA Astrophysics Data System (ADS)

Agrawal, Shraddha; Parveen, Azra; Naqvi, A. H.

2015-06-01

The synthesis of pure and Mg doped Copper aluminumoxide CuAlO2nanoparticles, a promising p-type TCO (transparent conducting oxide) have been done bysol gel auto combustion method using NaOH as a fuel, calcinated at 600°C. The structural properties were examined by XRD and SEM techniques. The optical absorption spectra of CuAlO2 sample recorded by UV-VIS spectrophotometer in the range of 200 to 800 nm have been presented. The crystallite size was determined by powder X-ray diffraction technique. The electrical behavior of pure and Mg doped CuAlO2 has been studied over a wide range of frequencies by using complex impedance spectroscopy.The variation of a.c. conductivity has been studied as function of frequency and temperature. The data taken together conclude that doping causes decreases in the ac conductivity of the nanoparticles as compared with the pure nanoparticles. Mg doping affects the optical properties and band gap.

Scintillation properties of rare-earth doped NaPO3-Al(PO3)3 glasses

NASA Astrophysics Data System (ADS)

Kuro, Tomoaki; Okada, Go; Kawaguchi, Noriaki; Fujimoto, Yutaka; Masai, Hirokazu; Yanagida, Takayuki

2016-12-01

We systematically investigated photoluminescence (PL), scintillation and dosimeter properties of rare-earth (RE) doped NaPO3-Al(PO3)3 (NAP) glasses. The NAP glasses doped with a series of RE ions (La-Yb, except Pm) with a consistent concentration (0.3 wt%) were prepared by the conventional melt-quenching method. The PL and scintillation decay time profiles showed fast (ns) and slow (μs or ms) components: the fast components from 15 to 100 ns were due to the host or 5d-4f transition emission, and the slow components from 15 μs to 5 ms were due to the 4f-4f transitions of RE. The thermally stimulated luminescence (TSL) was evaluated as a dosimeter property, and glow peaks appeared around 400 °C in all the samples. The TSL dose response function was examined in the dose range from 10 mGy to 10 Gy. Among the samples tested, Nd and Tb doped glasses showed higher signal by at least one order of magnitude than those of non-doped and other RE-doped samples. Over the dose range tested, the TSL signals are linearly related with the incident X-ray dose, showing a potential for practical applications.

Local structure analysis of diluted magnetic semiconductor Co and Al co-doped ZnO nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hyodo, K.; Morimoto, S.; Yamazaki, T.

2016-02-01

In this study, Co and Al ions co-doped ZnO nanoparticles (Zn(Al, Co)O NPs) were prepared by our original chemical preparation method. The obtained samples prepared by this method, were encapsulated in amorphous SiO{sub 2}. X-ray diffraction (XRD) results showed Zn(Al, Co)O NPs had a single-phase nature with hexagonal wurtzite structure. These particle sizes could be controlled to be approximately 30 nm. We investigate the effect that the increase in the carrier has on the magnetization by doping Al to Co-doped ZnO NPs. The local structures were qualitatively analyzed using X-ray absorption fine structure (XAFS) measurements.

Biocompatibility of Mg Ion Doped Hydroxyapatite Films on Ti-6Al-4V Surface by Electrochemical Deposition.

PubMed

Lee, Kang; Choe, Han-Cheol

2016-02-01

In this study, we prepared magnesium (Mg) doped nano-phase hydroxyapatite (HAp) films on the TiO2 nano-network surface using electrochemical deposition method. Ti-6Al-4V ELI surface was anodized in 5 M NaOH solution at 0.3 A for 10 min. Nano-network TiO2 surface were formed by these anodization steps which acted as templates and anchorage for growth of the Mg doped HAp during subsequent pulsed electrochemical deposition process at 85 degrees C. The phase and morphologies of HAp deposits were influenced by the Mg ion concentration.

Optically pumped cerium-doped LiSrAlF{sub 6} and LiCaAlF{sub 6}

DOEpatents

Marshall, C.D.; Payne, S.A.; Krupke, W.F.

1996-05-14

Ce{sup 3+}-doped LiSrAlF{sub 6} crystals are pumped by ultraviolet light which is polarized along the c axis of the crystals to effectively energize the laser system. In one embodiment, the polarized fourth harmonic light output from a conventional Nd:YAG laser operating at 266 nm is arranged to pump Ce:LiSrAlF{sub 6} with the pump light polarized along the c axis of the crystal. The Ce:LiSrAlF{sub 6} crystal may be placed in a laser cavity for generating tunable coherent ultraviolet radiation in the range of 280-320 nm. Additionally, Ce-doped crystals possessing the LiSrAlF{sub 6} type of chemical formula, e.g. Ce-doped LiCaAlF{sub 6} and LiSrGaF{sub 6}, can be used. Alternative pump sources include an ultraviolet-capable krypton or argon laser, or ultraviolet emitting flashlamps. The polarization of the pump light will impact operation. The laser system will operate efficiently when light in the 280-320 nm gain region is injected or recirculated in the system such that the beam is also polarized along the c axis of the crystal. The Ce:LiSrAlF{sub 6} laser system can be configured to generate ultrashort pulses, and it may be used to pump other devices, such as an optical parametric oscillator. 10 figs.

Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

NASA Astrophysics Data System (ADS)

Zhong, Hong-Xia; Shi, Jun-Jie; Zhang, Min; Jiang, Xin-He; Huang, Pu; Ding, Yi-Min

2014-10-01

Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al0.83Ga0.17N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 1019 cm-3 can be obtained in (AlN)5/(GaN)1 SL by MgGa δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

PubMed Central

Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

2014-01-01

Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al0.83Ga0.17N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 1019 cm−3 can be obtained in (AlN)5/(GaN)1 SL by MgGa δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN. PMID:25338639

Reducing Mg acceptor activation-energy in Al(0.83)Ga(0.17)N disorder alloy substituted by nanoscale (AlN)₅/(GaN)₁ superlattice using Mg(Ga) δ-doping: Mg local-structure effect.

PubMed

Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

2014-10-23

Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al(0.83)Ga(0.17)N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al(0.83)Ga(0.17)N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 10(19) cm(-3) can be obtained in (AlN)5/(GaN)1 SL by Mg(Ga) δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

Characterizations of Pr-doped Yb3Al5O12 single crystals for scintillator applications

NASA Astrophysics Data System (ADS)

Yoshida, Yasuki; Shinozaki, Kenji; Igashira, Takuya; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-04-01

Yb3Al5O12 (YbAG) single crystals doped with different concentrations of Pr were synthesized by the Floating Zone (FZ) method. Then, we evaluated their basic optical and scintillation properties. All the samples showed photoluminescence (PL) with two emission bands appeared approximately 300-500 nm and 550-600 nm due to the charge transfer luminescence of Yb3+ and intrinsic luminescence of the garnet structure, respectively. A PL decay profile of each sample was approximated by a sum of two exponential decay functions, and the obtained decay times were 1 ns and 3-4 ns. In the scintillation spectra, we observed emission peaks in the ranges from 300 to 400 nm and from 450 to 550 nm for all the samples. The origins of these emissions were attributed to charge transfer luminescence of Yb3+ and intrinsic luminescence of the garnet structure, respectively. The scintillation decay times became longer with increasing the Pr concentrations. Among the present samples, the 0.1% Pr-doped sample showed the lowest scintillation afterglow level. In addition, pulse height spectrum of 5.5 MeV α-rays was demonstrated using the Pr-doped YbAG, and we confirmed that all the samples showed a full energy deposited peak. Above all, the 0.1% Pr-doped sample showed the highest light yield with a value of 14 ph/MeV under α-rays excitation.

Carbon monoxide sensing properties of B-, Al- and Ga-doped Si nanowires

NASA Astrophysics Data System (ADS)

de Santiago, F.; Trejo, A.; Miranda, A.; Salazar, F.; Carvajal, E.; Pérez, L. A.; Cruz-Irisson, M.

2018-05-01

Silicon nanowires (SiNWs) are considered as potential chemical sensors due to their large surface-to-volume ratio and their possible integration into arrays for nanotechnological applications. Detection of harmful gases like CO has been experimentally demonstrated, however, the influence of doping on the sensing capacity of SiNWs has not yet been reported. For this work, we theoretically studied the surface adsorption of a CO molecule on hydrogen-passivated SiNWs grown along the [111] crystallographic direction and compared it with the adsorption of other molecules such as NO, and O2. Three nanowire diameters and three dopant elements (B, Al and Ga) were considered, and calculations were done within the density functional theory framework. The results indicate that CO molecules are more strongly adsorbed on the doped SiNW than on the pristine SiNW. The following trend was observed for the CO adsorption energies: E A[B-doped] > E A[Al-doped] > E A[Ga-doped] > E A[undoped], for all diameters. The electronic charge transfers between the SiNWs and the adsorbed CO were estimated by using a Voronoi population analysis. The CO adsorbed onto the undoped SiNWs has an electron-acceptor character, while the CO adsorbed onto the B-, Al-, and Ga-doped SiNWs exhibits an electron-donor character. Comparing these results with the ones obtained for the NO and O2 adsorption, the larger CO adsorption energy on B-doped SiNWs indicates their good selectivity towards CO. These results suggest that SiNW-based sensors of toxic gases could represent a clear and advantageous application of nanotechnology in the improvement of human quality of life.

Doping of AlH3 with alkali metal hydrides for enhanced decomposition kinetics

NASA Astrophysics Data System (ADS)

Sandrock, Gary; Reilly, James

2005-03-01

Aluminum hydride, AlH3, has inherently high gravimetric and volumetric properties for onboard vehiclular hydrogen storage (10 wt% H2 and 0.148 kg H2/L). Yet it has been widely neglected because of its kinetic limitations for low-temperature H2 desorption and the thermodynamic difficulties associated with recharging. This paper considers a scenario whereby doped AlH3 is decomposed onboard and recharged offboard. In particular, we show that particle size control and doping with small levels of alkali metal hydrides (e.g., LiH) results in accelerated H2 desorption rates nearly high enough to supply fuel-cell and ICE vehicles. The mechanism of enhanced H2 desorption is associated with the formation of alanate windows (e.g., LiAlH4) between the AlH3 particles and the external gas phase. These alanate windows can be doped with Ti to further enhance transparency, even to the point of accomplishing slow decomposition of AlH3 at room temperature. It is highly likely 2010 gravimetric and volumetric vehicular system targets (6 wt% H2 and 0.045 kg/L) can be met with AlH3. But a new, low-cost method of offboard regeneration of spent Al back to AlH3 is yet needed.

Thermal annealing effect on the Mg-doped AlGaN/GaN superlattice

NASA Astrophysics Data System (ADS)

Wang, Baozhu; An, Shengbiao; Wen, Huanming; Wu, Ruihong; Wang, Xiaojun; Wang, Xiaoliang

2009-11-01

Mg-doped AlGaN/GaN superlattice has been grown by metalorganic chemical vapor deposition (MOCVD). Rapid thermal annealing (RTA) treament are carryied out on the samples under nitrogen as protect gas. Hall, photoluminescence (PL), high resolution x-ray diffraction (HRXRD) and atomic-force microscopy (AFM) are used to characterize the electrical, optical and structural properties of the as-grown and annealed samples, respectively. After annealing, the Hall results indicate more Mg acceptors are activated, which leads to higher hole concentration and lower p-type resistivity. The PL intensity of Mg related defect band shows a strong decrease after annealing. The annealing of the superlattice degrade the interface quality of the AlGaN/GaN from the HRXRD results. Many nanometer-grains can be observed on the surface of AlGaN/GaN superlattice from the AFM image. This maybe related with the decomposing of GaN or the separating of Mg from the AlGaN/GaN superlattice.

Doping effects on UPd 2Al 3

NASA Astrophysics Data System (ADS)

Geibel, C.; Schank, C.; Jährling, F.; Buschinger, B.; Grauel, A.; Lühmann, T.; Gegenwart, P.; Helfrich, R.; Reinders, P. H. P.; Steglich, F.

1994-04-01

We present first results of a doping study on the U site on UPd 2Al 3. These results give further support for a tetravalent uranium configuration and an induced type of antiferromagnetic ordering. They confirm the importance of an unperturbed electronic configuration for both antiferromagnetic long-range ordering and heavy-fermion superconductivity. Implications for the interaction between both phenomena are discussed.

Effect of concentration variation on 2.0 µm emission of Ho3+-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 oxyfluorosilicate glasses

NASA Astrophysics Data System (ADS)

Gelija, Devarajulu; Borelli, Deva Prasad Raju

2018-02-01

The concentration variation of Ho3+ ion-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 glasses has been prepared by conventional melt quenching method. The thermal stability of 1 mol % of Ho3+-doped oxyfluorosilicate glass has been calculated using the differential thermal analysis (DTA) spectra. The phenomenological Judd-Ofelt intensity parameters Ωλ ( λ = 2, 4 and 6) were calculated for all concentrations of Ho3+ ions. The luminescence spectra in visible region of Ho3+ ion-doped glasses were recorded under the excitation wavelength of 452 nm. The spectra consists of several intense emission bands (5F4, 5S2) → 5I8 (547 nm), 5F3 → 5I8 (647 nm), 5F5 → 5I7 (660 nm) and (5F4, 5S2) → 5I7 (750 nm) in the range 500-780 nm. The fluorescence emission at ˜2.0 µm (5I7 → 5I8) was observed under the excitation of 488 nm Ar-ion laser. The stimulated emission cross section for 5I7 → 5I8 transition (˜2.0 µm) varies from 8.46 to 9.52 × 10-21 cm2, as calculated by the Fuchtbauer-Ladenburg (FL) theory. However, Mc-Cumber theory was used to calculate emission cross section values about 4.24-5.75 × 10-21 cm2 for the 5I7 → 5I8 transition in all concentrations of Ho3+-doped oxyfluorosilicate glasses. Therefore, these results reveal that the 0.5 mol % of Ho3+-doped oxyfluorosilicate glasses, exhibiting higher emission cross section, has potentially been used for laser applications at ˜ 2.0 µm.

Carbon monoxide sensing properties of B-, Al- and Ga-doped Si nanowires.

PubMed

de Santiago, F; Trejo, A; Miranda, A; Salazar, F; Carvajal, E; Pérez, L A; Cruz-Irisson, M

2018-05-18

Silicon nanowires (SiNWs) are considered as potential chemical sensors due to their large surface-to-volume ratio and their possible integration into arrays for nanotechnological applications. Detection of harmful gases like CO has been experimentally demonstrated, however, the influence of doping on the sensing capacity of SiNWs has not yet been reported. For this work, we theoretically studied the surface adsorption of a CO molecule on hydrogen-passivated SiNWs grown along the [111] crystallographic direction and compared it with the adsorption of other molecules such as NO, and O 2 . Three nanowire diameters and three dopant elements (B, Al and Ga) were considered, and calculations were done within the density functional theory framework. The results indicate that CO molecules are more strongly adsorbed on the doped SiNW than on the pristine SiNW. The following trend was observed for the CO adsorption energies: E A [B-doped] > E A [Al-doped] > E A [Ga-doped] > E A [undoped], for all diameters. The electronic charge transfers between the SiNWs and the adsorbed CO were estimated by using a Voronoi population analysis. The CO adsorbed onto the undoped SiNWs has an electron-acceptor character, while the CO adsorbed onto the B-, Al-, and Ga-doped SiNWs exhibits an electron-donor character. Comparing these results with the ones obtained for the NO and O 2 adsorption, the larger CO adsorption energy on B-doped SiNWs indicates their good selectivity towards CO. These results suggest that SiNW-based sensors of toxic gases could represent a clear and advantageous application of nanotechnology in the improvement of human quality of life.

First-principles study on the magnetic and electronic properties of Al or P doped armchair silicene nanoribbons

NASA Astrophysics Data System (ADS)

Zhang, Xiaojiao; Zhang, Dan; Xie, Fang; Zheng, Xialian; Wang, Haiyan; Long, Mengqiu

2017-07-01

Using the first-principles calculations, we investigate the geometric structure, electronic and magnetic properties of armchair silicene nanoribbons (ASiNRs) doped with aluminum (Al) or phosphorus (P) atoms. Total energy analysis shows that both Al and P atoms are preferentially doping at the edge site of ASiNRs. And the magnetism can be found in both Al and P doped systems. For Al doped ASiNRs, we find that the magnetic moment and band gap are dependent on the ribbon width. While for P doped ASiNRs, the magnetic moment always keeps 1μB and is independent of the ribbon width, meanwhile the band gap oscillates with a period of three with the ribbon width increasing. Our results present a new avenue for band engineering of SiNRs and benefit for the designing of silicone-based nano-spin-devices in nanoelectronics.

Stabilization of cubic Li7La3Hf2O12 by Al-doping

NASA Astrophysics Data System (ADS)

Baklanova, Yana V.; Tyutyunnik, Alexander P.; Tarakina, Nadezda V.; Fortes, A. Dominic; Maksimova, Lidiya G.; Korona, Daniil V.; Denisova, Tatyana A.

2018-07-01

In this paper we report on the stabilization of cubic Li7La3Hf2O12 by Al3+ doping and present a detailed crystal structure study and lithium ion conductivity measurements of the obtained compound. Polycrystalline Al-doped Li7La3Hf2O12 was prepared by a modified solid state method. The compound consists of micrometer size grains encapsulated by a glassy phase, which helps preventing the volatilization of lithium during annealing. Al-doped Li7La3Hf2O12 crystallizes in the garnet-related structure with a cubic unit cell (sp. gr. Ia 3 bar d (230)). A structural refinement using X-ray and neutron powder diffraction data showed that the Al3+ ions occupy only tetrahedral Li+ sites in the structure. The presence of overextended leading edges of the peaks on the XRD and NPD data is described by the introduction of an additional phase with rhombohedral distortion that occurs through a stretching of the cubic phase along the body diagonal. The activation energy as well as the total conductivity at room temperature are close to values obtained for un-doped cubic Li7La3Zr2O12 and Li7La3Hf2O12 garnets, which make Al-doped Li7La3Hf2O12 a potential candidate for the application as solid electrolyte in solid-state rechargeable lithium-ion batteries.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

PubMed

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Nonprotective Alumina Growth in Sulfur-Doped NiAl(Zr)

NASA Technical Reports Server (NTRS)

Smialek, James L.

2000-01-01

The 1200 C oxidation behavior of NiAl was examined at various levels of sulfur and zirconium dopants to test the possibility of a critical S/Zr ratio required for adhesion. Cyclic furnace testing for 200 1 -hr cycles and interrupted testing for 500 hr were used as screening tests. Pure NiAl and NiAl(Zr) with 0. 14 at.% Zr were chosen as model base compositions; they exhibited normal, slow-growing scales (3 Mg/sq cm) with excellent adhesion for the Zr-doped alloys. NiAl with about 120 ppma S exhibited a substantial weight loss (-20 Mg/sq cm) in cyclic tests and a very large weight gain (+60 Mg/sq cm) in interrupted tests. The major surface phase remained as alpha -Al2O3. Sulfur doping the NiAl(Zr) alloy caused massive weight gains of 80 - 100 Mg/sq cm, swelling, cracking, and nearly complete conversion into NiAl2O4, and alpha- Al2O3. The initial objective of determining critical S/Zr ratios for adhesion was therefore unattainable. Initiation of the catastrophic attack was examined after a 10 hr exposure, revealing a few sites of broad, raised, and cracked ridges. In cross-section, the ridges appeared as modular intrusions, with a complex, fractal, oxide-metal interface. They were primarily alumina (with occasional entrapped islands of NiAl2O4 or pure Ni metal). They possessed a unique microstructure consisting of 0.3 microns lamellae, separated by 0.1 microns open channels. This allowed for rapid growth controlled by gaseous diffusion. The microstructure is discussed in terms of SO2 evolution and a sulfur-driven de-passivation process.

Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Takatsu, J.; Fuji, R.; Tatebayashi, J.; Timmerman, D.; Lesage, A.; Gregorkiewicz, T.; Fujiwara, Y.

2018-04-01

We report on the growth and optical properties of Tm-doped AlGaN layers by organometallic vapor phase epitaxy (OMVPE). The morphological and optical properties of Tm-doped GaN (GaN:Tm) and Tm-doped AlGaN (AlGaN:Tm) were investigated by Nomarski differential interference contrast microscopy and photoluminescence (PL) characterization. Nomarski images reveal an increase of surface roughness upon doping Tm into both GaN and AlGaN layers. The PL characterization of GaN:Tm shows emission in the near-infrared range originating from intra-4f shell transitions of Tm3+ ions. In contrast, AlGaN:Tm also exhibits blue light emission from Tm3+ ions. In that case, the wider band gap of the AlGaN host allows energy transfer to higher states of the Tm3+ ions. With time-resolved PL measurements, we could distinguish three types of luminescent sites of Tm3+ in the AlGaN:Tm layer, having different decay times. Our results confirm that Tm ions can be doped into GaN and AlGaN by OMVPE, and show potential for the fabrication of novel high-color-purity blue light emitting diodes.

Upconversion improvement in KLaF4:Yb3+/Er3+ nanoparticles by doping Al3+ ions

NASA Astrophysics Data System (ADS)

Zhou, Haifang; Wang, Xiechun; Lai, Yunfeng; Cheng, Shuying; Zheng, Qiao; Yu, Jinlin

2017-10-01

Rare-earth ion-doped upconversion (UC) materials show great potential applications in optical and optoelectronic devices due to their novel optical properties. In this work, hexagonal KLaF4:Yb3+/Er3+ nanoparticles (NPs) were successfully synthesized by a hydrothermal method, and remarkably enhanced upconversion luminescence in green and red emission bands in KLaF4:Yb3+/Er3+ NPs has been achieved by doping Al3+ ions under 980 nm excitation. Compared to the aluminum-free KLaF4:Yb3+/Er3+ NPs sample, the UC fluorescence intensities of the green and red emissions of NPs doped with 10 at.% Al3+ ions were significantly enhanced by 5.9 and 7.3 times, respectively. Longer lifetimes of the doped samples were observed for the 4S3/2 state and 4F9/2 state. The underlying reason for the UC enhancement by doping Al3+ ions was mainly ascribed to distortion of the local symmetry around Er3+ ions and adsorption reduction of organic ligands on the surface of NPs. In addition, the influence of doping Al3+ ions on the structure and morphology of the NPs samples was also discussed.

Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

NASA Astrophysics Data System (ADS)

Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

2016-07-01

Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

Crystal growth and scintillation properties of Nd-doped Lu 3Al 5O 12 single crystals with different Nd concentrations

NASA Astrophysics Data System (ADS)

Sugiyama, Makoto; Fujimoto, Yutaka; Yanagida, Takayuki; Yokota, Yuui; Pejchal, Jan; Furuya, Yuki; Tanaka, Hidehiko; Yoshikawa, Akira

2011-04-01

Nd 0.1%, 0.5%, 1% and 3% doped Lu 3Al 5O 12 (Nd:LuAG) single crystals were grown in the nitrogen atmosphere by the micro-pulling down (μ-PD) method. The grown crystals had a single-phase confirmed by powder XRD analysis. In absorption spectra, some weak absorption lines due to Nd 3+ 4f-4f transitions were observed and their intensity increased with the increase of Nd concentration. When excited by 241Am α-ray, a broad emission peak due to defects in the host lattice at 320 nm and some sharp lines due to Nd 3+ 4f-4f transitions at wavelength longer than 400 nm were observed. The decay time profiles of Nd:LuAG under γ-ray excitation were well approximated by two exponential function of 340-760 ns and 3-5 μs for each sample. By pulse height measurement using 137Cs, Nd 0.5%:LuAG showed the highest light yield of 7600 ± 760 photons/MeV.

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT).

PubMed

Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen

2016-11-22

The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La 3+ donor-doped, Fe 3+ acceptor-doped and La 3+ /Fe 3+ -co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT)

PubMed Central

Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen

2016-01-01

The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La3+ donor-doped, Fe3+ acceptor-doped and La3+/Fe3+-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT. PMID:28774067

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

PubMed Central

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-01-01

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm2 at the reverse bias of −1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface. PMID:25205042

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.

PubMed

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-09-10

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm(2) at the reverse bias of -1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface.

Theoretical study on the phenylpropanolamine drug interaction with the pristine, Si and Al doped [60] fullerenes

NASA Astrophysics Data System (ADS)

Moradi, Morteza; Nouraliei, Milad; Moradi, Reza

2017-03-01

Phenylpropanolamine (PPA) is a popular drug of abuse and its detection is of great importance for police and drug communities. Herein, we investigated the electronic sensitivity and reactivity of pristine, Al and Si doped C60 fullerenes to the PPA drug, using density functional theory calculations. Two adsorption mechanisms were predicted for PPA on the pristine C60 including cycloaddition and adsorption via -NH2 group. It was found that the pristine C60 has a good sensitivity to this drug but suffers from a weak interaction (adsorption energy -0.1 kcal/mol) because of structural deformation and aromaticity break. The PPA is adsorbed on the Al or Si doped C60 from its -OH or -NH2 groups. The Al-doping significantly improves the reactivity of C60 but decreases its electronic sensitivity. Unlike the Al-doping, the Si-doping increases both the reactivity and electronic sensitivity to the PPA drug. At the presence of PPA drug, the conductivity of the Si-doped C60 considerably increases due to the HOMO-LUMO gap reduction by about 30.3%. Different analyses were used to obtain the results including nucleus independent chemical shift (NICS), density of states (DOS), molecular electrostatic potential (MEP), frontier molecular orbitals (FMO), etc.

Theoretical Study of Electronic Structure and Thermoelectric Properties of Doped CuAlO2

NASA Astrophysics Data System (ADS)

Poopanya, P.; Yangthaisong, A.; Rattanapun, C.; Wichainchai, A.

2011-05-01

The doping level dependence of thermoelectric properties of delafossite CuAlO2 has been investigated in the constant scattering time ( τ) approximation, starting from the first principles of electronic structure. In particular, the lattice parameters and the energy band structure were calculated using the total energy plane-wave pseudopotential method. It was found that the lattice parameters of CuAlO2 are a = 2.802 Å and c = 16.704 Å, and the internal parameter is u = 0.1097. CuAlO2 has an indirect band gap of 2.17 eV and a direct gap of 3.31 eV. The calculated energy band structures were then used to calculate the electrical transport coefficients of CuAlO2. By considering the effects of doping level and temperature, it was found that the Seebeck coefficient S( T) increases with increasing acceptor doping ( A d) level. The values of S( T) in our experiments correspond to an A d level at 0.262 eV, which is identified as the Fermi level of CuAlO2. Based on our experimental Seebeck coefficient and the electrical conductivity, the constant relaxation time is estimated to be 1 × 10-16 s. The power factor is large for a low A d level and increases with temperature. It is suggested that delafossite CuAlO2 can be considered as a promising thermoelectric oxide material at high doping and high temperature.

The Electronic Structure and Formation Energies of Ni-doped CuAlO2 by Density Functional Theory Calculation

NASA Astrophysics Data System (ADS)

Xu, Ying; Li, Fei; Sheng, Wei; Nie, Guo-Zheng; Yuan, Ding-Wang

2014-03-01

The electronic structure and formation energies of Ni-doped CuAlO2 are calculated by first-principles calculations. Our results show that Ni is good for p-type doping in CuAlO2. When Ni is doped into CuAlO2, it prefers to substitute Al-site. NiAl is a shallow acceptor, while NiCu is a deep acceptor and its formation energy is high. Further electronic structure calculations show that strong hybridization happens between Ni-3d and O-2p states for Ni substituting Al-site, while localized Ni-3d states are found for Ni substituting Cu-site.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Erdong; Li, Qiming; Swartzentruber, Brian

2015-11-25

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

Luminescent properties of Ln3+ doped tellurite glasses containing AlF3

NASA Astrophysics Data System (ADS)

Walas, Michalina; Pastwa, Agata; Lewandowski, Tomasz; Synak, Anna; Gryczyński, Ignacy; Sadowski, Wojciech; Kościelska, Barbara

2016-09-01

The low-phonon energy tellurite glasses TeO2-BaO-Bi2O3 and TeO2-BaO-Bi2O3-AlF3 triply doped with Eu3+, Tb3+, Tm3+ ions in two different molar ratios were synthesized using melt-quenching technique. Their structure and luminescence properties were widely investigated by X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC), Fourier Transform Infrared Spectroscopy (FTIR) and Photoluminescence Spectroscopy (PL). The luminescence spectra of Eu3+, Tb3+, Tm3+ co-doped glasses show apart of the bands corresponding to the 4f-4f transitions of lanthanide ions also band corresponding to glass matrix. AlF3 doping increases emission intensity, although to improve overall emission color further studies on molar composition of samples and the molar ratio of the components should be carried out.

Auto-combustion synthesis and characterization of Mg doped CuAlO{sub 2} nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrawal, Shraddha, E-mail: shraddhaa32@gmail.com; Parveen, Azra; Naqvi, A. H.

2015-06-24

The synthesis of pure and Mg doped Copper aluminumoxide CuAlO{sub 2}nanoparticles, a promising p-type TCO (transparent conducting oxide) have been done bysol gel auto combustion method using NaOH as a fuel, calcinated at 600°C. The structural properties were examined by XRD and SEM techniques. The optical absorption spectra of CuAlO{sub 2} sample recorded by UV-VIS spectrophotometer in the range of 200 to 800 nm have been presented. The crystallite size was determined by powder X-ray diffraction technique. The electrical behavior of pure and Mg doped CuAlO{sub 2} has been studied over a wide range of frequencies by using complex impedance spectroscopy.Themore » variation of a.c. conductivity has been studied as function of frequency and temperature. The data taken together conclude that doping causes decreases in the ac conductivity of the nanoparticles as compared with the pure nanoparticles. Mg doping affects the optical properties and band gap.« less

Thermally and optically stimulated radiative processes in Eu and Y co-doped LiCaAlF6 crystal

NASA Astrophysics Data System (ADS)

Fukuda, Kentaro; Yanagida, Takayuki; Fujimoto, Yutaka

2015-06-01

Yttrium co-doping was attempted to enhance dosimeter performance of Eu doped LiCaAlF6 crystal. Eu doped and Eu, Y co-doped LiCaAlF6 were prepared by the micro-pulling-down technique, and their dosimeter characteristics such as optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were investigated. By yttrium co-doping, emission intensities of OSL and TSL were enhanced by some orders of magnitude. In contrast, scintillation characteristics of yttrium co-doped crystal such as intensity of prompt luminescence induced by X-ray and light yield under neutron irradiation were degraded.

Enhancing Graphene Capacitance by Nitrogen: Effects of Doping Configuration and Concentration

DOE PAGES

Zhan, Cheng; Cummings, Peter; Jiang, De-en

2016-01-08

Recent experiments have shown that nitrogen doping enhances capacitance in carbon electrode supercapacitors. However, a detailed study of the effect of N-doping on capacitance is still lacking. In this paper, we study the doping concentration and the configuration effect on the electric double-layer (EDL) capacitance, quantum capacitance, and total capacitance. It is found that pyridinic and graphitic nitrogens can increase the total capacitance by increasing quantum capacitance, but pyrrolic configuration limits the total capacitance due to its much lower quantum capacitance than the other two configurations. We also find that, unlike the graphitic and pyridinic nitrogens, the pyrrolic configuration's quantummore » capacitance does not depend on the nitrogen concentration, which may explain why some capacitance versus voltage measurements of N-doped graphene exhibit a V-shaped curve similar to that of undoped graphene. Our investigation provides a deeper understanding of the capacitance enhancement of the N-doping effect in carbon electrodes and suggests a potentially effective way to optimize the capacitance by controlling the type of N-doping.« less

Co-doping effects on luminescence and scintillation properties of Ce doped (Lu,Gd)3(Ga,Al)5O12 scintillator

NASA Astrophysics Data System (ADS)

Yamaguchi, Hiroaki; Kamada, Kei; Kurosawa, Shunsuke; Pejchal, Jan; Shoji, Yasuhiro; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

2016-11-01

Mg co-doping effects on scintillation properties of Ce:Lu1Gd2(Ga,Al)5O12 (LGGAG) were investigated. Mg 200 ppm co-doped Ce:LGGAG single crystals were prepared by micro pulling down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg co-doping. Ce4+ charge transfer absorption was observed below 300 nm in Mg,Ce:LGGAG which is in good agreement with previous reports. The scintillation decay times were accelerated by Mg co-doping.

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

NASA Astrophysics Data System (ADS)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

NASA Astrophysics Data System (ADS)

Haidet, Brian B.; Bryan, Isaac; Reddy, Pramod; Bryan, Zachary; Collazo, Ramón; Sitar, Zlatko

2015-06-01

Ohmic contacts to AlGaN grown on sapphire substrates have been previously demonstrated for various compositions of AlGaN, but contacts to AlGaN grown on native AlN substrates are more difficult to obtain. In this paper, a model is developed that describes current flow through contacts to Si-doped AlGaN. This model treats the current through reverse-biased Schottky barriers as a consequence of two different tunneling-dependent conduction mechanisms in parallel, i.e., Fowler-Nordheim emission and defect-assisted Frenkel-Poole emission. At low bias, the defect-assisted tunneling dominates, but as the potential across the depletion region increases, tunneling begins to occur without the assistance of defects, and the Fowler-Nordheim emission becomes the dominant conduction mechanism. Transfer length method measurements and temperature-dependent current-voltage (I-V) measurements of Ti/Al-based contacts to Si-doped AlGaN grown on sapphire and AlN substrates support this model. Defect-assisted tunneling plays a much larger role in the contacts to AlGaN on sapphire, resulting in nearly linear I-V characteristics. In contrast, contacts to AlGaN on AlN show limited defect-assisted tunneling appear to be only semi-Ohmic.

Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

PubMed

Li, X D; Chen, T P; Liu, Y; Leong, K C

2014-09-22

Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing.

Fabrication of Eu doped CdO [Al/Eu-nCdO/p-Si/Al] photodiodes by perfume atomizer based spray technique for opto-electronic applications

NASA Astrophysics Data System (ADS)

Ravikumar, M.; Ganesh, V.; Shkir, Mohd; Chandramohan, R.; Arun Kumar, K. Deva; Valanarasu, S.; Kathalingam, A.; AlFaify, S.

2018-05-01

In this study, thin films of cadmium oxide (CdO) with different concentrations (0, 1, 3, and 5 wt%) of Eu doping were deposited onto Si and glass substrates by a novel and facile spray technique using simple perfume atomizer for the first time. Prepared films were characterized for structural, morphological, optical properties and the photo diode studies, using X-ray diffraction, scanning electron microscope, UV-Vis spectrophotometer, Isbnd V characteristics, and fundamental parameters are reported. All the prepared Eu:CdO films exhibit cubic structure. The preferential orientation is along (200) plane. Scanning electron microscopy study indicates the growth of smooth and pin-hole free films with clusters of homogeneous grains. The values of band gap energy are found to be varying from 2.42 to 2.33 eV for various Eu doping concentration from 0 to 5 wt%. EDAX studies revealed the presence of Eu, Cd and O elements without any other impurities. FTIR spectra showed a peak at 575 cm-1 confirming the stretching mode of Cdsbnd O. The resistivity (ρ), high carrier concentration (n) and carrier mobility (μ) for 3 wt% CdO thin film are found to be 0.452 × 10-3(Ω.cm), 17.82 × 1020 cm-3 and 7.757 cm2/V, respectively. Current-voltage measurements on the fabricated nanostructured Al/Eu-nCdO/p-Si/Al heterojunction device showed a non-linear electric characteristics indicating diode like behaviour.

Influence Al doped ZnO nanostructure on structural and optical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramelan, Ari Handono, E-mail: aramelan@mipa.uns.ac.id; Wahyuningsih, Sayekti; Chasanah, Uswatul

2016-04-19

The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO causemore » of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.« less

Properties of Lu3Al5O12, Lu3Al5O12:Pr, Lu3Al5O12:Pr,Mo, and (Lu1-x Y x )3Al5O12:Pr scintillator crystals

NASA Astrophysics Data System (ADS)

Talik, E.; Kusz, J.; Guzik, A.; Szubka, M.; Balin, K.; Kisielewski, J.; Wierzchowski, W.; Malinowska, A.; Strojny-Nedza, A.; Pajaczkowska, A.; Drozdowski, W.

2017-05-01

Lattice parameters, magnetic susceptibility, electronic structure, distribution of the elements and thermal properties were examined for single crystals of Lu3Al5O12 (LuAG) and (Lu1-x Y x )3Al5O12 (LuYAG) (x  =  0.25, 0.50, 0.75), either pure or doped with Pr and optionally co-doped with Mo, which are predicted as potential fast and efficient scintillators. It was indicated that specific cage-like surrounding of rare earth and aluminum ions built from oxygen ions and proper doping can influence the thermal conductivity and the emission process. Maximum light emission (LY) was observed at praseodymium concentration about 0.3 at.%. The growth atmosphere (Ar or N2) influences the crystal quality. Additional molybdenum doping below 0.01 at% concentration increases LY.

Directionally solidified Eu doped CaF2/Li3AlF6 eutectic scintillator for neutron detection

NASA Astrophysics Data System (ADS)

Kamada, Kei; Hishinuma, Kousuke; Kurosawa, Shunsuke; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2015-12-01

Eu doped CaF2/Li3AlF6 eutectics were grown by μ-PD method. The directionally solidified eutectic with well-aligned 600 nm diameter Eu:CaF2 scintillator fibers surrounded with Li3AlF6 was prepared. The grown eutectics showed an emission peak at 422 nm ascribed to Eu2+ 4f-5d transition from Eu:CaF2 scintillation fiber. Li concentration in the Eu:CaF2-Li3AlF6 eutectic is around 0.038 mol/cm3,which is two times higher than that of LiCaAlF6 single crystal (0.016 mol/cm3). The light yield of Eu:CaF2-Li3AlF6 eutectic was around 7000 ph/neutron. The decay time was about 550 ns (89%) and 1450 ns (11%).

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

NASA Astrophysics Data System (ADS)

Turski, Henryk; Muzioł, Grzegorz; Siekacz, Marcin; Wolny, Pawel; Szkudlarek, Krzesimir; Feduniewicz-Żmuda, Anna; Dybko, Krzysztof; Skierbiszewski, Czeslaw

2018-01-01

Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration.

First principles Study on Transparent High-Tc Superconductivity in hole-doped Delafossite CuAlO2

NASA Astrophysics Data System (ADS)

Nakanishi, Akitaka; Katayama-Yoshida, Hiroshi

2012-02-01

The CuAlO2 is the transparent p-type conductor without any intentional doping. Transparent superdoncutivity and high thermoelectric power are suggested in p-type CuAlO2 [1]. Katayama-Yoshida et al. proposed that it may cause a strong electron-phonon interaction and a superconductivity. But, the calculation of superconducting critical temperature Tc is not performed. We performed the first principles calculation about the Tc of hole-doped CuAlO2 by shifting the Fermi level rigidly. In lightly hole-doped CuAlO2, the Fermi level is located at Cu and O anti-bonding band. The electrons of this band strongly interact with the A1L1 phonon mode because the direction of O-Cu-O dumbbell is parallel to the oscillation direction of the A1L1 phonon mode. As a result, Tc of lightly hole-doped CuAlO2 is about 50 K. We also discuss the materials design to enhance the Tc based on the charge-excitation-induced negative effective U system.[4pt] [1] H. Katayama-Yoshida, T. Koyanagi, H. Funashima, H. Harima, A. Yanase: Solid State Communication 126 (2003) 135. [0pt] [2] A. Nakanishi and H. Katayama-Yoshida: Solid State Communication, in printing. (arXiv:1107.2477v3

Engineering the switching dynamics of TiOx-based RRAM with Al doping

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Khiat, Ali; Cortese, Simone; Serb, Alexantrou; Carta, Daniela; Prodromakis, Themistoklis

2016-07-01

Titanium oxide (TiOx) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiOx thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

[Structure and luminescence properties of Ga2O3 : Cr3+ by Al doping].

PubMed

Wang, Xian-Sheng; Wan, Min-Hua; Wang, Yin-Hai; Zhao, Hui; Hu, Zheng-Fa; Li, Hai-Ling

2013-11-01

The Al doping gallate phosphor (Ga(1-x)Al(x))2O3 : Cr3+ (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) was synthesized by a high temperature solid-state reaction method. The X-ray diffractions show that the phase of the phosphors remains to be Ga2 O3 structure with increase in the contents of Al3+ ion. Beside, the fact that the X-ray diffraction peak shifts towards big angles with increasing Al3+ ions content shows that Al3+ ions entered the Ga2 O3 lattice. The peaks of the excitation spectra located at 258, 300, 410 and 550 nm are attributed to the band to band transition of the matrix, charge transfer band transition, and 4A2 --> 4T1 and 4A2 --> 4T2 transition of Cr3+ ions, respectively. Those excitation spectrum peak positions show different degrees of blue shift with the increase in the Al3+ ions content. The blue shift of the first two peaks are due to the band gap energy of substrate and the electronegativity between Cr3+ ions and ligands increasing, respectively. The blue shift of the energy level transition of Cr3+ ion is attributed to crystal field strength increasing. The Cr3+ ion luminescence changes from a broadband emission to a narrow-band emission with Al3+ doping, because the emission of Cr3+ ion changed from 4 T2 --> 4A2 to 2E --> 4A2 transition with the crystal field change after Al3+ ions doping. The Al3+ ions doping improved the long afterglow luminescence properties of samples, and the sample showed a longer visible near infrared when Al3+ ions content reaches 0.5. The thermoluminescence curve shows the sample with suitable trap energy level, and this is also the cause of the long afterglow luminescence materials.

First principles study of the ground state properties of Si, Ga, and Ge doped Fe50Al50

NASA Astrophysics Data System (ADS)

Pérez, Carlos Ariel Samudio; dos Santos, Antonio Vanderlei

2018-06-01

The first principles calculation of the structural, electronic and associated properties of the Fe50Al50 alloy (B2 phase) doped by s-p elements (Im = Si, Ga, and Ge) are performed as a function of the atomic concentration on the basis of the Full Potential Linear Augmented Plane Wave (FP-LAPW) method as implemented in the WIEN2k code. The Al substitution by Im (Si and Ge) atoms (principally at a concentration of 6.25 at%) induces a pronounced redistribution of the electronic charge leading to a strong Fe-Im interaction with covalent bonding character. At the same time, decrease the lattice volume (V) while increase the bulk modulus (B). For the alloys containing Ga, the Fe-Ga interaction is also observed but the V and B of the alloy are very near to that of pure Fe-Al alloy. The magnetic moment and hyperfine parameters observed at the lattice sites of studied alloys also show variations, they increase or decrease in relation to that in Fe50Al50 according to the Im that substitutes Al.

Stability of the Al/TiB2 interface and doping effects of Mg/Si

NASA Astrophysics Data System (ADS)

Deng, Chao; Xu, Ben; Wu, Ping; Li, Qiulin

2017-12-01

The Al/TiB2 interface is of significant importance in controlling the mechanical properties of Al-B4C composites and tuning the heterogeneous nucleation of Al/Si alloys in industry. Its stability and bonding conditions are critical for both purposes. In this paper, the interfacial energies were investigated by first-principles calculations, and the results support the reported grain refinement mechanisms in Al/Si alloys. Moreover, to improve the mechanical properties of the interface, Mg and Si were doped at the interface, and our simulations show that the two interfaces will both weaken after doping Mg/Si, thus the formation of TiB2 is inhibited. As a result, the processability of the Al-B4C composites may be improved. Our results provide a theoretical basis and guidance for practical applications.

Hydrocracking of cumene over Ni/Al 2O 3 as influenced by CeO 2 doping and γ-irradiation

NASA Astrophysics Data System (ADS)

El-Shobaky, G. A.; Doheim, M. M.; Ghozza, A. M.

2004-01-01

Cumene hydrocracking was carried out over pure and doped Ni/Al 2O 3 solids and also, on these solids after exposure to different doses of γ-rays between 0.4 and 1.6 MGy. The dopant concentration was varied between 1 and 4 mol% CeO 2. Pure and doped samples were subjected to heat treatment at 400°C and cumene hydrocracking reaction was carried out using various solids at temperatures between 250°C and 400°C by means of micropulse technique. The results showed that both CeO 2 doping and γ-irradiation of the investigated system brought about an increase in its specific surface area. γ-irradiation of pure samples increased their catalytic activities effectively. However, the doping caused a decrease in the catalytic activity. γ-irradiation of the doped samples brought about a net decrease in the catalytic activity. The catalytic reaction products over different investigated solids were ethylbenzene as a major product together with different amounts of toluene, benzene and C 1-C 3 gaseous hydrocarbons. The selectivity towards the formation of various reaction products varies with the reaction temperature, doping and γ-irradiation.

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

NASA Astrophysics Data System (ADS)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Crystal Structure and Photocatalytic Activity of Al-Doped TiO2 Nanofibers for Methylene Blue Dye Degradation.

PubMed

Lee, Deuk Yong; Lee, Myung-Hyun; Kim, Bae-Yeon; Cho, Nam-Ihn

2016-05-01

Al-TiO2 nanofibers were prepared using a sol-gel derived electrospinning by varying the Al/Ti molar ratio from 0 to 0.73 to investigate the effect of Al doping on the crystal structure and the photocatalytic activity of Al-TiO2 for methylene blue (MB) degradation. XRD results indicated that as the Al/Ti molar ratio rose, crystal structure of Al-TiO2 was changed from anatase/rutile (undoped), anatase (0.07-0.18), to amorphous phase (0.38-0.73), which was confirmed by XPS and Raman analysis. The degradation kinetic constant increased from 7.3 x 10(-4) min(-1) to 4.5 x 10(-3) min(-1) with the increase of Al/Ti molar ratios from 0 to 0.38, but decreased to 3.4 x 10(-3) min(-1) when the Al/Ti molar ratio reached 0.73. The Al-TiO2 catalyst doped with 0.38 Al/Ti molar ratio demonstrated the best MB degradation. Experimental results indicated that the Al doping in Al-TiO2 was mainly attributed to the crystal structure of TiO2 and the photocatalytic degradation of MB.

Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

NASA Astrophysics Data System (ADS)

Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

2015-06-01

Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

Effect of aluminum and yttrium doping on zinc sulphide nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Swati, E-mail: sharma.swati1507@gmail.com; Kashyap, Jyoti; Kapoor, A.

2016-05-06

In this work, pristine and doped Zinc Sulphide (ZnS) nanoparticles have been synthesized via chemical co-precipitation method. ZnS nanoparticles have been doped with Aluminium (Al) and Yttrium (Y) with doping concentration of 5wt% each. The structural and optical properties of the as prepared nanoparticles have been studied using X-Ray diffraction (XRD) technique and Photoluminescence spectroscopy. Average grain size of 2-3nm is observed through the XRD analysis. Effect of doping on stress, strain and lattice constant of the nanoparticles has also been analyzed. Photoluminescence spectra of the as prepared nanoparticles is enhanced due to Al doping and quenched due to Ymore » doping. EDAX studies confirm the relative doping percentage to be 3.47 % and 3.94% by wt. for Al and Y doped nanoparticles respectively. Morphology of the nanoparticles studied using TEM and SEM indicates uniform distribution of spherical nanoparticles.« less

Anisotropic strain relaxation of Si-doped metamorphic InAlAs graded buffers on InP

NASA Astrophysics Data System (ADS)

Gu, Yi; Zhang, Yonggang; Chen, Xingyou; Ma, Yingjie; Zheng, Yuanliao; Du, Ben; Zhang, Jian

2017-09-01

The effects of Si doping on the strain relaxation of InP-based metamorphic In x Al1-x As graded buffers have been investigated. The highly Si-doped sample shows an increased ridge period along the [1 1 0] direction in the cross-hatch morphology measured by atomic force microscope. X-ray diffraction reciprocal space mapping measurements reveal that the high Si-doping induced incomplete relaxation as well as inhomogeneous residual strain along the [1 -1 0] direction, which was also observed in micro-Raman measurements. The anisotropic strain relaxation is attributed to the Si-doping enhanced anisotropy of misfit dislocations along the orthogonal directions. The α-misfit dislocations along the [1 -1 0] direction are further delayed to generate in highly Si-doped InAlAs buffer, while the β-misfit dislocations along the [1 1 0] direction are not. These results supply useful suggestions on the design and demonstration of semiconductor metamorphic devices.

Effect of Al doping on structural and mechanical properties of Ni-Cd ferrites

NASA Astrophysics Data System (ADS)

Shidaganal, Lata C.; Gandhad, Sheela S.; Hiremath, C. S.; Mathad, S. N.; Jeergal, P. R.; Pujar, R. B.

2018-05-01

Ferrites are ceramic magnetic materials which behave like a conventional ferromagnetic. Ni-Zn ferrites are commercially used as electromagnetic interfaces in hard disc drives, laptops and other electronic devices. Here we are going to report on the structural and mechanical properties of Al doped Ni-Cd ferrites synthesized by standard double sintering ceramic method by using AR grade Al oxide, Ni oxide, Cd oxide and ferric oxide in molar proportions with a general chemical formula Ni0.5 Cd0.5 Alx Fe2-x O4 where x=0.1 to 0.4.X-ray analysis confirms the formation of single phase FCC spinel structure. The decrease in lattice constant with Al concentration is attributed to Vegard's law. IR spectra indicate prominent absorption bands near 400cm-1and 600cm-1 which are assigned to fundamental vibrations of complexes in A and B sites respectively. SEM micrographs exhibit fine grains without segregation of impurities. The average grain diameter is found vary from 1.00µm to 0.9 µm which is in agreement with Vegard's law.

Zinc interstitial threshold in Al-doped ZnO film: Effect on microstructure and optoelectronic properties

NASA Astrophysics Data System (ADS)

Singh, Chetan C.; Panda, Emila

2018-04-01

In order to know the threshold quantity of the zinc interstitials that contributes to an increase in carrier concentration in the Al-doped ZnO (AZO) films and their effect on the overall microstructure and optoelectronic properties of these films, in this work, Zn-rich-AZO and ZnO thin films are fabricated by adding excess zinc (from a zinc metallic target) during their deposition in RF magnetron sputtering and are then investigated using a wide range of experimental techniques. All these films are found to grow in a ZnO hexagonal wurtzite crystal structure with strong (002) orientation of the crystallites, with no indication of Al2O3, metallic Zn, and Al. The excessively introduced zinc in these AZO and/or ZnO films is found to increase the shallow donor level defects (i.e., zinc interstitials and oxygen-related electronic defect states), which is found to significantly increase the carrier concentration in these films. Additionally, aluminum is seen to enhance the creation of these electronic defect states in these films, thereby contributing more to the overall carrier concentration of these films. However, carrier mobility is found to decrease when the carrier concentration values are higher than 4 × 1020 cm-3, because of the electron-electron scattering. Whereas the optical band gap of the ZnO films is found to increase with increasing carrier concentration because of the Burstein-Moss shift, these decrease for the AZO films due to the band gap narrowing effect caused by excess carrier concentration.

Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC

NASA Astrophysics Data System (ADS)

Yang, Yu; Guo, Jianqiu; Raghothamachar, Balaji; Chan, Xiaojun; Kim, Taejin; Dudley, Michael

2018-02-01

Highly doped 4H-SiC will show a significant lattice parameter difference with respect to the undoped material. We have applied the recently developed monochromatic contour mapping technique for 4H-SiC crystals to a 4H-SiC wafer crystal characterized by nitrogen doping concentration variation across the whole sample surface using a synchrotron monochromatic x-ray beam. Strain maps of 0008 and - 2203 planes were derived by deconvoluting the lattice parameter variations from the lattice tilt. Analysis reveals markedly different strain values within and out of the basal plane indicating the strain induced by nitrogen doping is anisotropic in the 4H-SiC hexagonal crystal structure. The highest strain calculated along growth direction [0001] and along [1-100] on the closed packed basal plane is up to - 4 × 10-4 and - 2.7 × 10-3, respectively. Using an anisotropic elasticity model by separating the whole bulk crystal into numerous identical rectangular prism units, the measured strain was related to the doping concentration and the calculated highest nitrogen level inside wafer crystal was determined to be 1.5 × 1020 cm-3. This is in agreement with observation of double Shockley stacking faults in the highly doped region that are predicted to nucleate at nitrogen levels above 2 × 1019 cm-3.

Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors.

PubMed

Choi, Chang-Hoon; Han, Jaecheon; Park, Jae-Seong; Seong, Tae-Yeon

2013-11-04

The enhanced light output power of a InGaN/AlGaN-based light-emitting diodes (LEDs) using three different types of highly reflective Sn-doped indium oxide (ITO)/Al-based p-type reflectors, namely, ITO/Al, Cu-doped indium oxide (CIO)/s-ITO(sputtered)/Al, and Ag nano-dots(n-Ag)/CIO/s-ITO/Al, is presented. The ITO/Al-based reflectors exhibit lower reflectance (76 - 84% at 365 nm) than Al only reflector (91.1%). However, unlike Al only n-type contact, the ITO/Al-based contacts to p-GaN show good ohmic characteristics. Near-UV (365 nm) InGaN/AlGaN-based LEDs with ITO/Al, CIO/s-ITO/Al, and n-Ag/CIO/s-ITO/Al reflectors exhibit forward-bias voltages of 3.55, 3.48, and 3.34 V at 20 mA, respectively. The LEDs with the ITO/Al and CIO/s-ITO/Al reflectors exhibit 9.5% and 13.5% higher light output power (at 20 mA), respectively, than the LEDs with the n-Ag/CIO/s-ITO/Al reflector. The improved performance of near UV LEDs is attributed to the high reflectance and low contact resistivity of the ITO/Al-based reflectors, which are better than those of conventional Al-based reflectors.

Sequential PLD in oxygen/argon gas mixture of Al-doped ZnO thin films with improved electrical and optical properties

NASA Astrophysics Data System (ADS)

Coman, Tudor; Timpu, Daniel; Nica, Valentin; Vitelaru, Catalin; Rambu, Alicia Petronela; Stoian, George; Olaru, Mihaela; Ursu, Cristian

2017-10-01

Highly conductive transparent Al-doped ZnO (AZO) thin films were obtained at room temperature through sequential PLD (SPLD) from Zn and Al metallic targets in an oxygen/argon gas mixture. We have investigated the structural, electrical and optical properties as a function of the oxygen/argon pressure ratio in the chamber. The measured Hall carrier concentration was found to increase with argon injection from 1.3 × 1020 to 6.7 × 1020 cm-3, while the laser shots ratio for Al/Zn targets ablation was kept constant. This increase was attributed to an enhancement of the substitution doping into the ZnO lattice. The argon injection also leads to an increase of the Hall mobility up to 20 cm2 V-1 s-1, attributed to a reduction of interstitial-type defects. Thus, the approach of using an oxygen/argon gas mixture during SPLD from metallic targets allows obtaining at room temperature AZO samples with high optical transmittance (about 90%) and low electrical resistivity (down to 5.1 × 10-4 Ω cm).

Synthesis and Thermochromic Properties of Cr-Doped Al2O3 for a Reversible Thermochromic Sensor

PubMed Central

Nguyen, Duy Khiem; Lee, Heesoo; Kim, In-Tae

2017-01-01

An inorganic thermochromic material based on Cr-doped Al2O3 is synthesized using a solid-state method. The crystal structure, chemical composition, and morphology of the synthesized material are analyzed using X-ray diffraction, scanning electron microscopy coupled with an energy-dispersive X-ray spectrometer, and Fourier transform infrared (FT-IR) spectroscopy. The color performances of the synthesized material are analyzed using a UV-VIS spectrometer. Finally, the thermochromism exhibited by the powdered samples at high temperatures is investigated. The material exhibits exceptional thermochromic property, transitioning from pink to gray or green in a temperature range of 25–600 °C. The change in color is reversible and is dependent on the surrounding temperature and chromium concentration; however, it is independent of the exposure time. This novel property of Cr-doped Al2O3 can be potentially employed in reversible thermochromic sensors that could be used not only for warning users of damage due to overheating when the environmental temperature exceeds certain limits, but also for detecting and monitoring the temperature of various devices, such as aeronautical engine components, hotplates, and furnaces. PMID:28772834

Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

NASA Astrophysics Data System (ADS)

Liu, Shiying; Peng, Sunjuan; Ma, Jun; Li, Guojian; Qin, Xuesi; Li, Mengmeng; Wang, Qiang

2017-04-01

This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (ρ) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 × 10-3 Ω·m at 210 °C. However, the ρ of the Al-doped ZnO films is less than 10-5 Ω·m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 μV/K and -3.415 μV/K at 210 °C, respectively. Power factor reaches the maximum value (3.198 × 10-4 W/m·K2) at 210 °C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films.

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

2017-07-01

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

PubMed

Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

2015-01-01

Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

Catalyst-free growth of Al-doped SnO2 zigzag-nanobelts for low ppm detection of organic vapours

NASA Astrophysics Data System (ADS)

Sinha, Sudip Kumar; Ghosh, Saptarshi

2016-10-01

In this effort, we report on development of specific sensors dedicated for detection of two of these volatiles, namely ethanol and acetone, below the prescribed statutory limits. Single crystalline Al-doped SnO2 zigzag nanobelt structures were deposited on Si substrate by a catalyst-free thermal evaporation method. The Al-doped SnO2 zigzag nanostructures exhibit high sensitivity and repeatability together with coveted features like fast response and excellent stability. Structural attributes involving the crystal quality and morphology of Al-doped SnO2 zigzag nanobelts were analyzed using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy and transmission electron microscopy. The microscopic images revealed formation of randomly oriented 'zigzag-like' nanobelts with characteristic width between 60 nm and 200 nm and length of 50-300 μm. The Al-doping was observed to have a discerning effect in enhancing the sensitivity in comparison to the pristine nanowires by creating excess oxygen vacancies in the crystal lattice, confirmed through XPS and PL spectra.

Effect of Mo-doping concentration on the physical behaviour of sprayed ZnO layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, T. Sreenivasulu; Reddy, M. Vasudeva; Reddy, K. T. Ramakrishna, E-mail: ktrkreddy@gmail.com

2015-06-24

Mo-doped zinc oxide layers (MZO) have been prepared on cleaned glass substrates by chemical spray pyrolysis technique by varying Mo-doping concentration in the range, 0 – 5 at. %. The X-ray diffraction studies revealed that all the as prepared layers were polycrystalline in nature and exhibited wurtzite structure. The layers prepared with lower Mo-doping concentration (<2 at. %) were preferably oriented along the (100) plane, whereas in the case of higher Mo-doping concentration (>2 at. %), the films showed the (002) plane as the dominant peak. The optical analysis indicated that all the layers had an average optical transmittance ofmore » 80% in the visible region and the evaluated band gap varied in the range, 3.28 - 3.50 eV.« less

Al-doped TiO{sub 2} mesoporous material supported Pd with enhanced catalytic activity for complete oxidation of ethanol

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Jing, E-mail: mlczjsls123@163.com; Mu, Wentao, E-mail: mwt15035687833@163.com; Su, Liqing, E-mail: suliqing0163@163.com

Pd catalysts supported on Al-doped TiO{sub 2} mesoporous materials were evaluated in complete oxidation of ethanol. The catalysts synthesized by wet impregnation based on evaporation-induced self-assembly were characterized by X-ray diffraction, measurement of pore structure, XPS, FT-IR, temperature programmed reduction and TEM. Characteristic results showed that the aluminium was doped into the lattice of mesoporous anatase TiO{sub 2} to form Al-O-Ti defect structure. Catalytic results revealed that Al-doped catalysts were much more active than the pristine one, especially at low temperature (≤200 °C). This should be ascribed to the introduction of aluminium ions that suppressed the strong metal-support interaction andmore » increased the active sites of Pd oxides, enhanced the stabilized anatase TiO{sub 2}, improved well dispersed high valence palladium species with high reducibility and enriched chemisorption oxygen. - Graphical abstract: Al-doped Pd/TiO{sub 2} exhibited optimal catalytic performance for ethanol oxidation and CO{sub 2} yield by the suppression of SMSI. - Highlights: • Palladium catalysts supported on Al-doped TiO{sub 2} mesoporous materials were studied. • The introduction of Al can enhance anatase stabilization and increase defect TiO{sub 2}. • The Pd/Al-TiO{sub 2} catalysts show higher ethanol conversion and CO{sub 2} yield than Pd/TiO{sub 2}. • The influence of Al on SMSI and catalytic performance were evaluated by TPR and XPS.« less

Microstructural analysis and thermoelectric properties of Sn-Al co-doped ZnO ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoemke, Joshua, E-mail: jhoemke@sigma.t.u-tokyo.ac.jp; Tochigi, Eita; Shibata, Naoya

2016-08-26

Sn-Al co-doped polycrystalline ZnO ceramics were prepared by sintering in air. Phase and microstructure analysis was performed by X-ray diffraction and SEM-EDS and thermoelectric properties were measured. XRD analysis showed a ZnO primary phase as well as secondary phase peaks due to the formation of a Zn{sub 2}SnO{sub 4} spinel phase or SnO{sub 2}(ZnO:Sn-Al){sub m} intergrowth phase. SEM analysis revealed a dense microstructure with a small number of nanometric pores, consistent with the measured density of 5.48 g/cm{sup 3}. An activated electrical conductivity characteristic of a semiconducting material was observed as well as a negative Seebeck coefficient with both valuesmore » increasing in absolute value from RT to 730 °C. The power factor had a maximum value of 3.73×10{sup −4} W m{sup −1} K{sup −2} at 730 °C. Thermal conductivity measurements showed a significant reduction over the measured temperature range compared to undoped ZnO. This could be attributed to grain size reduction, the formation of a nanoscale secondary phase or a reduction in crystallinity caused by Sn-Al co-doping. A maximum ZT of 0.06 was obtained at 750 °C for the Sn-Al co-doped ZnO ceramics.« less

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

NASA Astrophysics Data System (ADS)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

The formation of tungsten doped Al2O3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

NASA Astrophysics Data System (ADS)

Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

2016-07-01

Tungsten doped Al2O3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na2WO4·2H2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al2O3, ZnO, metallic tungsten and WO3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al2O3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al2O3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al2O3/ZnO coatings is higher thanof undoped Al2O3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na2WO4·2H2O. Tungsten in Al2O3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

NASA Astrophysics Data System (ADS)

Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.

2018-01-01

In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.

Luminescent Eu3+ doped Al6Ge2O13 crystalline compounds obtained by the sol gel process for photonics

NASA Astrophysics Data System (ADS)

Maia, Lauro J. Q.; Faria Filho, Fausto M.; Gonçalves, Rogéria R.; Ribeiro, Sidney J. L.

2018-01-01

We synthesized pure and Eu3+ doped Al6Ge2O13 samples by an easy and low-cost sol-gel route using the GeO2, Al(NO3)3·9H2O and Eu(NO3)3·6H2O as precursors, tetramethylammonium hydroxide and ethanol as solvents. The Al6Ge2O13 crystalline phase possesses orthorhombic structure and is a potential host for rare earth ions, especially due to high aluminum concentration. Homogeneous and transparent sols and gels were obtained. The samples containing 1 mol% of Eu3+ were heat-treated at 1000 °C to eliminate organic compounds, providing high optical quality and structural purity. All materials were characterized by thermogravimetric and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectroscopy, high resolution transmission electron microscopy, selected area electron diffraction, diffuse reflectance spectra in the ultraviolet-visible-near infrared regions and photoluminescence measurements. High purity of Eu3+ doped Al6Ge2O13 orthorhombic phase and well crystallized grain dimensions of around 100 nm was obtained with high red photoluminescence emission. The decay lifetime of 5D0 level from Eu3+ (the emission at 612 nm) was determined, being between 0.97 and 2.12 ms, and an average quantum efficiency of 54% was determined (considering the average experimental lifetime of 1.77 ms). Moreover, it was calculated and analyzed some parameters of Judd-Ofelt theory applied to Eu3+ emissions from Al6Ge2O13 host. The results show that Eu3+ doped Al6Ge2O13 crystalline compounds have large potential to be used in displays and LED devices.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors.

PubMed

Zhang, Xue; Lee, Hyeonju; Kwon, Jung-Hyok; Kim, Eui-Jik; Park, Jaehoon

2017-07-31

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Determination of carrier lifetime and diffusion length in Al-doped 4H-SiC epilayers by time-resolved optical techniques

NASA Astrophysics Data System (ADS)

Liaugaudas, Gediminas; Dargis, Donatas; Kwasnicki, Pawel; Arvinte, Roxana; Zielinski, Marcin; Jarašiūnas, Kęstutis

2015-01-01

A series of p-type 4H-SiC epilayers with aluminium concentration ranging from 2  ×  1016 to 8  ×  1019 cm-3 were investigated by time-resolved optical techniques in order to determine the effect of aluminium doping on high-injection carrier lifetime at room temperature and the diffusion coefficient at different injections (from ≈3  ×  1018 to ≈5  ×  1019 cm-3) and temperatures (from 78 to 730 K). We find that the defect limited carrier lifetime τSRH decreases from 20 ns in the low-doped samples down to ≈0.6 ns in the heavily doped epilayers. Accordingly, the ambipolar diffusion coefficient decreases from Da = 3.5 cm2 s-1 down to ≈0.6 cm2 s-1, corresponding to the hole mobility of µh = 70 cm2 Vs-1 and 12 cm2 Vs-1, respectively. In the highly doped epilayers, the injection-induced decrease of the diffusion coefficient, due to the transition from the minority carrier diffusion to the ambipolar diffusion, provided the electron diffusion coefficient of De ≈ 3 cm2 s-1. The Al-doping resulted in the gradual decrease of the ambipolar diffusion length, from LD = 2.7 µm down to LD = 0.25 µm in the epilayers with the lowest and highest aluminium concentrations.

Computational materials design of attractive Fermion system with large negative effective Ueff in the hole-doped Delafossite of CuAlO2, AgAlO2 and AuAlO2: Charge-excitation induced Ueff < 0

NASA Astrophysics Data System (ADS)

Nakanishi, A.; Fukushima, T.; Uede, H.; Katayama-Yoshida, H.

2015-12-01

On the basis of general design rules for negative effective U(Ueff) systems by controlling purely-electronic and attractive Fermion mechanisms, we perform computational materials design (CMD®) for the negative Ueff system in hole-doped two-dimensional (2D) Delafossite CuAlO2, AgAlO2 and AuAlO2 by ab initio calculations with local density approximation (LDA) and self-interaction corrected-LDA (SIC-LDA). It is found that the large negative Ueff in the hole-doped attractive Fermion systems for CuAlO2 (UeffLDA = - 4.53 eV and UeffSIC-LDA = - 4.20 eV), AgAlO2 (UeffLDA = - 4.88 eV and UeffSIC-LDA = - 4.55 eV) and AuAlO2 (UeffLDA = - 4.14 eV and UeffSIC-LDA = - 3.55 eV). These values are 10 times larger than that in hole-doped three-dimensional (3D) CuFeS2 (Ueff = - 0.44 eV). For future calculations of Tc and phase diagram by quantum Monte Carlo simulations, we propose the negative Ueff Hubbard model with the anti-bonding single π-band model for CuAlO2, AgAlO2 and AuAlO2 using the mapped parameters obtained from ab initio electronic structure calculations. Based on the theory of negative Ueff Hubbard model (Noziéres and Schmitt-Rink, 1985), we discuss |Ueff| dependence of superconducting critical temperature (Tc) in the 2D Delafossite of CuAlO2, AgAlO2 and AuAlO2 and 3D Chalcopyrite of CuFeS2, which shows the interesting chemical trend, i.e., Tc increases exponentially (Tc ∝ exp [ - 1 / | Ueff | ]) in the weak coupling regime | Ueff(- 0.44 eV) | < W(∼ 2 eV) (where W is the band width of the negative Ueff Hubbard model) for the hole-doped CuFeS2, and then Tc goes through a maximum when | Ueff(- 4.88 eV , - 4.14 eV) | ∼ W(2.8 eV , 3.5 eV) for the hole-doped AgAlO2 and AuAlO2, and finally Tc decreases with increasing |Ueff| in the strong coupling regime, where | Ueff(- 4.53 eV) | > W(1.7 eV) , for the hole-doped CuAlO2.

Vacancy-induced brittle to ductile transition of W-M co-doped Al3Ti (M=Si, Ge, Sn and Pb).

PubMed

Zhu, Mingke; Wu, Ping; Li, Qiulin; Xu, Ben

2017-10-25

We investigated the effect of vacancy formation on brittle (D0 22 ) to ductile (L1 2 -like) transition in Al 3 Ti using DFT calculations. The well-known pseudogap on the density of states of Al 3 Ti migrates towards its Fermi level from far above, via a W - M co-doping strategy, where M is Si, Ge, Sn or Pb respectively. In particular, by a W - M co-doping the underline electronic structure of the pseudogap approaches an octahedral (L1 2 : t 2g , e g ) from the tetragonal (D0 22 : e g , b 2g , a 1g , b 1g ) crystal field. Our calculations demonstrated that (1) a W-doping is responsible for the close up of the energy gap between a 1g and b 1g so that they tend to merge into an e g symmetry, and (2) all M-doping lead to a narrower gap between e g and b 2g (moving towards a t 2g symmetry). Thus, a brittle to ductile transition in Al 3 Ti is possible by adopting this W - M co-doping strategy. We further recommend the use of W-Pb co-doped Al 3 Ti to replace the less anodic Al electrode in Al-battery, due to its improved ductility and high Al diffusivity. Finally this study opens a new field in physics to tailor mechanical properties by manipulating electron energy level(s) towards higher symmetry via vacancy optimization.

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

NASA Astrophysics Data System (ADS)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Synthesis Structural and Optical Properties Of (Co, Al) co-doped ZnO Nano Particles

NASA Astrophysics Data System (ADS)

Swapna, P.; Venkatramana Reddy, S.

2018-02-01

We prepared (Co, Al) co-doped ZnO nanostructures using the method chemical co-precipitation successfully, at room temperature using PEG (Poly ethylene glycol) as stabilizing agent. Samples are prepared with different concentrations by keeping aluminium at 5 mol percent constant and varying the concentration of cobalt from 1 to 5 mol percent. After the preparation all the samples are carefully subjected to characterizations such as XRD, SEM with EDS, TEM, PL and UV-VIS-NIR. XRD pattern shows that all the samples possess hexagonal wurtzite crystal structure having no secondary phases pertaining to Al or cobalt, which shows successful dissolution of the dopents. TEM results shows the accurate size of particles and is confirmed the XRD data. SEM images of all the samples shows that particles are in nearly spherical shape, EDS spectrum reveals that incorporation of cobalt and aluminum in host lattice. PL spectrum shows that all the samples containing two prominent peaks centered at 420 nm and 446 nm. UV-VIS-NIR spectra has shown three absorptions peaks in the range of wavelength 550 nm to 700 nm, which are ascribed as typical d-d transitions of cobalt ions.

Chrystal structure properties of Al-doped Li{sub 4}Ti{sub 5}O{sub 12} synthesized by solid state reaction method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sandi, Dianisa Khoirum, E-mail: dianisa875@gmail.com; Suryana, Risa, E-mail: rsuryana@staff.uns.ac.id; Priyono, Slamet, E-mail: slam013@lipi.go.id

2016-02-08

This research aim is to analyze the effect of Aluminum (Al) doping in the structural properties of Al-doped Li{sub 4}Ti{sub 5}O{sub 12} as anode in lithium ion battery. Al-doped Li{sub 4}Ti{sub 5}O{sub 12} powders were synthesized by solid state reaction method. LiOH.H{sub 2}O, TiO{sub 2}, and Al{sub 2}O{sub 3} were raw materials. These materials were milled for 15 h, calcined at temperature of 750{sup o}C and sintered at temperature of 800{sup o}C. Mole percentage of doping Al (x) was varied at x=0; x=0.025; and x =0.05. Al-doped Li{sub 4}Ti{sub 5}O{sub 12} powders were synthesized by solid state reaction method. X-ray diffractionmore » was employed to determine the structure of Li{sub 4}Ti{sub 5}O{sub 12}. The PDXL software was performed on the x-ray diffraction data to estimate the phase percentage, the lattice parameter, the unit cell volume, and the crystal density. Al-doped Li{sub 4}Ti{sub 5}O{sub 12} has cubic crystal structure. Al-doping at x=0 and x=0.025 does not change the phase as Li{sub 4}Ti{sub 5}O{sub 12} while at x=0.050 the phase changes to the LiTiAlO{sub 4}. The diffraction patterns show that the angle shifted to the right as the increase of x which indicated that Al substitute Ti site. Percentage of Li{sub 4}Ti{sub 5}O{sub 12} phase at x=0 and x=0.025 was 97.8% and 96.8%, respectively. However, the lattice parameters, the unit cell volume, and the crystal density does not change significantly at x=0; x=0.025; and x=0.050. Based on the percentage of Li{sub 4}Ti{sub 5}O{sub 12} phase, the Al-doped Li at x=0 and x=0.025 is promising as a lithium battery anode.« less

Synthesis of SrAl2O4:Eu2+ phosphors co-doped with Dy3+, Tb3+, Si4+ and optimization of co-doping amount by response surface method

NASA Astrophysics Data System (ADS)

Wang, Huan; Liang, Xiaoping; Liu, Kai; Zhou, Qianqian; Chen, Peng; Wang, Jun; Li, Jianxin

2016-03-01

Dy3+ doped SrAl2O4:Eu2+ phosphors were synthesized by high temperature solid phase method in a weak reducing atmosphere (5% H2 + 95% N2). The relationship between the crushed granularity and the phosphors brightness was studied. The effect of co-doping amount of Dy3+, Tb3+ and Si4+ on the structure and properties of SrAl2O4:Eu2+ via response surface method was investigated. Photoluminescence measurement results showed that the initial afterglow brightness of 0.002 mol% Dy3+ doped SrAl2O4:Eu2+0.002 phosphors decreased after first increased within the sintering temperature range from 1150 to 1400 °C, which created the highest value of 12,101 mcd/m2 at 1300 °C. Numerous coarse particles in the powder ought to be crushed for the practical application, however, the brightness became lower accompanied by the decrease of the granularity. The luminescence property of SrAl2O4:Eu2+ sintered at 1200 °C improved by co-doping Dy3+-Tb3+-Si4+. The results of response surface method showed that the influence extent on the luminescence property was Dy3+ > Tb3+ > Si4+. When the co-doping amount in SrAl2O4:Eu2+0.002 phosphors of Dy3+, Tb3+ and Si4+ was 0.001 mol%, 0.0005 mol% and 0.002 mol%, respectively, the initial afterglow brightness of SrAl2O4 was up to the highest value of 12,231 mcd/m2, which was in good agreement on the predicted maximum value of 12,519 mcd/m2 with the optimum co-doping amount of 0.0015 mol% Dy3+, 0.0005 mol% Tb3+ and 0.0017 mol% Si4+. The brightness of co-doped phosphors not only increased by 56.79% than that of SrAl2O4:Eu2+0.002, Dy3+0.002 sintered at 1200 °C, but also was above that of 1300 °C. The emission spectra results showed that, compared with 0.001 mol% Dy3+ doped phosphor, the emission peak of 0.001 mol% Dy3+-0.001 mol% Tb3+ co-doped phosphor generated red shift and increased by 9.3% in emission intensity; 0.001 mol% Dy3+-0.004 mol% Si4+ and 0.001 mol% Dy3+-0.001 mol% Tb3+-0.004 mol% Si4+ co-doped SrAl2O4:Eu2+0.002 emission peak created blue

Reduction Mechanisms of Cu2+-Doped Na2O-Al2O3-SiO2 Glasses during Heating in H2 Gas.

PubMed

Nogami, Masayuki; Quang, Vu Xuan; Ohki, Shinobu; Deguchi, Kenzo; Shimizu, Tadashi

2018-01-25

Controlling valence state of metal ions that are doped in materials has been widely applied for turning optical properties. Even though hydrogen has been proven effective to reduce metal ions because of its strong reducing capability, few comprehensive studies focus on practical applications because of the low diffusion rate of hydrogen in solids and the limited reaction near sample surfaces. Here, we investigated the reactions of hydrogen with Cu 2+ -doped Na 2 O-Al 2 O 3 -SiO 2 glass and found that a completely different reduction from results reported so far occurs, which is dominated by the Al/Na concentration ratio. For Al/Na < 1, Cu 2+ ions were reduced via hydrogen to metallic Cu, distributing in glass body. For Al/Na > 1, on the other hand, the reduction of Cu 2+ ions occurred simultaneously with the formation of OH bonds, whereas the reduced Cu metal moved outward and formed a metallic film on glass surface. The NMR and Fourier transform infrared results indicated that the Cu 2+ ions were surrounded by Al 3+ ions that formed AlO 4 , distorted AlO 4 , and AlO 5 units. The diffused H 2 gas reacted with the Al-O - ···Cu + units, forming Al-OH and metallic Cu, the latter of which moved freely toward glass surface and in return enhanced H 2 diffusion.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

PubMed Central

Zhang, Xue; Lee, Hyeonju; Kim, Eui-Jik; Park, Jaehoon

2017-01-01

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance. PMID:28773242

The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers

NASA Astrophysics Data System (ADS)

Martens, M.; Kuhn, C.; Simoneit, T.; Hagedorn, S.; Knauer, A.; Wernicke, T.; Weyers, M.; Kneissl, M.

2017-02-01

Absorption losses in the Mg-doped layers significantly contribute to the modal losses in group-III-nitride-based lasers. In this paper, we investigate the influence of Mg-doping on the modal absorption of optically pumped UVC lasers grown on epitaxially laterally overgrown AlN/sapphire substrates with an averaged threading dislocation density of 1 × 109 cm-2. By varying the setback of the Mg-doping (˜1 × 1020 cm-3) within the upper Al0.70Ga0.30N waveguide layer, the overlap of the optical mode with the Mg-doped region increases. For all structures, internal losses were derived from gain spectra obtained by the variable stripe length method. The internal losses increase from 10 cm-1 for lasers without Mg-doping to 28 cm-1 for lasers with a fully Mg-doped upper waveguide layer. The overlap of the optical mode with the Mg-doped waveguide ΓMg clearly correlates with the modal losses. This allows to calculate the Mg-induced losses in current injection laser diodes by αm o d M g = Γ M g × 50 cm - 1 .

The effect of 0.025 Al-doped in Li4Ti5O12 material on the performance of half cell lithium ion battery

NASA Astrophysics Data System (ADS)

Priyono, Slamet; Triwibowo, Joko; Prihandoko, Bambang

2016-02-01

The effect of 0.025 Al-doped Li4Ti5O12 as anode material for Lithium Ion battery had been studied. The pure and 0.025 Al-doped Li4Ti5O12 were synthesized through solid state process in air atmosphere. Physical characteristics of all samples were observed by XRD, FTIR, and PSA. The XRD analysis revealed that the obtained particle was highly crystalline and had a face-centered cubic spinel structure. The XRD pattern also showed that the 0.025 Al-doped on the Li4Ti5O12 did not change crystal structure of Li4Ti5O12. FTIR analysis confirmed that the spinel structure in fingerprint region was unchanged when the structure was doped by 0.025 Al. However the doping of 0.025 Al increased particle size significantly. The electrochemical performance was studied by using cyclic voltammetry (CV) and charge-discharge (CD) curves. Electrochemical analysis showed that pure Li4Ti5O12 has higher capacity than 0.025 Al-doped Li4Ti5O12 had. But 0.025 Al-doped Li4Ti5O12 possesses a better cycling stability than pure Li4Ti5O12.

Enhanced Emission from Li2CaSiO4:Dy3+ Phosphors by Doping with Al3+ and B3+

NASA Astrophysics Data System (ADS)

Erdoğmuş, E.

2016-05-01

Pure Li2CaSiO4, Li2CaSiO4:Dy3+ and Al3+, B3+ co-doped materials were prepared by a solid-state reaction in air at 900°C for 6 h and characterized by using powder XRD. The luminescence properties of the synthesized phosphors were measured at room temperature with a spectrofluorometer. Li2CaSiO4:Dy3+ emits at 484, 575, and 660 nm upon 352 nm excitation. The emission spectrum intensity of Dy3+ increased from 0.01 to 0.06 mol.%, and beyond 0.06 mol.%, concentration quenching was observed. Also, in this study, the effects of boric acid and aluminum oxide concentration on the photoluminescence properties of Dy3+ doped phosphors were investigated. The results showed that boric acid and aluminum oxide were effective in improving the photoluminescence intensity of Li2CaSiO4:Dy3+ compounds.

Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Haugland, E. J.; Mena, R. A.; Alterovitz, S. A.

1995-01-01

The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

Enhanced role of Al or Ga-doped graphene on the adsorption and dissociation of N2O under electric field.

PubMed

Lv, Yong-an; Zhuang, Gui-lin; Wang, Jian-guo; Jia, Ya-bo; Xie, Qin

2011-07-21

To find an effective strategy for the capture and decomposition of nitrous oxide (N(2)O) is very important in order to protect the ozone layer and control the effects of global warming. Based on first-principles calculations, such a strategy is proposed by the systemic study of N(2)O interaction with pristine and Al (or Ga)-doped graphene, and N(2)O dissociation on the surface of Al (or Ga)-doped graphene in an applied electric field. The calculated adsorption energy value shows the N(2)O molecule more firmly adsorbs on the surface of Al (or Ga)-doped graphene than that of pristine graphene, deriving from a stronger covalent bond between the N(2)O molecule and the Al (or Ga) atom. Furthermore, our study suggests that N(2)O molecules can be easily decomposed to N(2) and O(2) with the appropriate electric field, which reveals that Al-doped graphene may be a new candidate for control of N(2)O. This journal is © the Owner Societies 2011

Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Hertkorn, J.; Thapa, S. B.; Wunderer, T.; Scholz, F.; Wu, Z. H.; Wei, Q. Y.; Ponce, F. A.; Moram, M. A.; Humphreys, C. J.; Vierheilig, C.; Schwarz, U. T.

2009-07-01

In this study, we present theoretical and experimental results regarding highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures. Based on simulation results, several multiheterostructures were grown by metalorganic vapor phase epitaxy. Using high resolution x-ray diffraction and x-ray reflectometry, the abruptness of the AlGaN/AlN/GaN interfaces could be determined. Using electron holography, the energetic profile of the valence band could be measured, yielding important information about the vertical carrier transport in such multiheterostructures. The electrical properties of the samples were investigated by measuring the lateral (σL) and vertical (σV) conductivity, respectively. The free hole concentration of a sample optimized in terms of lateral conductivity was measured to be 1.2×1019 cm-3 (295 K) with a mobility of 7 cm2/V s, yielding a record σL of 13.7 (Ω cm)-1. Low temperature Hall measurements (77 K) proved the existence of a two-dimensional hole gas at the AlN/GaN interface, as the lateral conductivity could be increased to 30 (Ω cm)-1 and no carrier freeze out was observable. By substituting the p-GaN layer in a light emitting diode (LED) with an AlGaN/GaN multiheterostructure, the overall voltage drop could be reduced by more than 100 mV (j =65 A/cm2). Furthermore improved current spreading on the p-side of LEDs with integrated AlGaN/AlN/GaN multiheterostructures could be proved by μ-electroluminescence, respectively.

Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation

NASA Astrophysics Data System (ADS)

Steinhartova, T.; Nichetti, C.; Antonelli, M.; Cautero, G.; Menk, R. H.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Koshmak, K.; Nannarone, S.; Arfelli, F.; Dal Zilio, S.; Biasiol, G.

2017-11-01

This work focuses on the development and the characterization of avalanche photodiodes with separated absorption and multiplication regions grown by molecular beam epitaxy. The i-GaAs absorption region is separated from the multiplication region by a δ p-doped layer of carbon atoms, which ensures that after applying a reverse bias, the vast majority of the potential drops in the multiplication region. Therein, thin layers of AlGaAs and GaAs alternate periodically in a so-called staircase structure to create a periodic modulation of the band gap, which under bias enables a well-defined charge multiplication and results in a low multiplication noise. The influence of the concentration of carbon atoms in the δ p-doped layer on the device characteristics was investigated and experimental data are presented together with simulation results.

Oxygen Annealing in the Synthesis of the Electron-Doped Cuprates

NASA Astrophysics Data System (ADS)

Higgins, J. S.; Bach, P. L.; Yu, W.; Weaver, B. D.; Greene, R. L.

2015-03-01

Post-synthesis oxygen reduction (annealing) in the electron-doped, high-temperature superconducting cuprates is necessary for the establishment of superconductivity. It is not established what effect this reduction has microscopically on the lattice structure. Several mechanisms have been put forth as explanations; they range from disorder minimization1, antiferromagnetic suppression2, and copper migration3. Here we present an electronic transport study on electron-doped cuprate Pr2-xCexCuO4+/-δ (PCCO) thin films in an attempt to better understand the need for this post-synthesis process. Several different cerium doping concentrations of PCCO were grown. Within each doping, a series of films were grown with varying levels of oxygen concentration. As a measure of disorder on the properties of PCCO, several films were irradiated with various doses of 2 MeV protons. Analysis within each series, and among the different dopings, favors disorder minimization through the removal of apical oxygen as the explanation for the necessary post-synthesis annealing process. 1P. K. Mang, et al., Physical Review Letters, 93(2):027002, 2004. 2P. Richard, et al., Physical Review B, 70 (6), 064513, 2004. 3Hye Jung Kang, et al., Nature Materials, 2007. Supported by NSF DMR 1104256.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gunning, BP; Fabien, CAM; Merola, JJ

2015-01-28

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 x 10(19) cm(-3) with effective acceptor activation energies of 51more » meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 x 10(20) cm(-3) show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 x 10(19) cm(-3). The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5V and series resistances of 6-10 Omega without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K. (C) 2015 AIP Publishing LLC.« less

Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

NASA Astrophysics Data System (ADS)

Liu, Xiaochi; Qu, Deshun; Choi, Min Sup; Lee, Changmin; Kim, Hyoungsub; Yoo, Won Jong

2018-04-01

We report on a simple, controllable chemical doping method to fabricate a lateral homogeneous MoS2 tunnel diode. MoS2 was doped to degenerate n- (1.6 × 1013 cm-2) and p-type (1.1 × 1013 cm-2) by benzyl viologen and AuCl3, respectively. The n- and p-doping can be patterned on the same MoS2 flake, and the high doping concentration can be maintained by Al2O3 masking together with vacuum annealing. A forward rectifying p-n diode and a band-to-band tunneling induced backward rectifying diode were realized by modulating the doping concentration of both the n- and p-sides. Our approach is a universal stratagem to fabricate diverse 2D homogeneous diodes with various functions.

Effect of Mo and Ti doping concentration on the structural and optical properties of ZnS nanoparticles

NASA Astrophysics Data System (ADS)

Naz, Hina; Ali, Rai Nauman; Zhu, Xingqun; Xiang, Bin

2018-06-01

In this paper, we report the effect of single phase Mo and Ti doping concentration on the structural and optical properties of the ZnS nanoparticles. The structural and optical properties of the as-synthesized samples have been examined by x-ray diffraction, transmission electron microscopy (TEM), UV-visible near infrared absorption spectroscopy and x-ray photoelectron spectroscopy. TEM characterizations reveal a variation in the doped ZnS nanoparticle size distribution by utilizing different dopants of Mo and Ti. In absorption spectra, a clear red shift of 14 nm is observed with increasing Mo concentration as compared to pure ZnS nanoparticles, while by increasing Ti doping concentration, blue shift of 14 nm is obtained. Moreover, it demonstrates that the value of energy band gap decreases from 4.03 eV to 3.89 eV in case of Mo doping. However, the value of energy band gap have shown a remarkable increase from 4.11 eV to 4.27 eV with increasing Ti doping concentration. Our results provide a new pathway to understand the effect of Mo and Ti doping concentrations on the structural and optical properties of ZnS nanoparticles as it could be the key to tune the properties for future optoelectronic devices.

Deposition of undoped and Al doped ZnO thin films using RF magnetron sputtering and study of their structural, optical and electrical properties

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Shrisha B., V.; Balakrishna, K. M.; Naik, K. Gopalakrishna

2017-05-01

Undoped ZnO and Al doped ZnO thin films were deposited on glass and p-Si(100) substrates by RF magnetron sputtering technique at room temperature using homemade targets. ZnO target containing 5 at% of Al2O3 as doping source was used for the growth of Al doped ZnO thin films. XRD revealed that the films have hexagonal wurtzite structure with high crystallinity. Morphology and chemical composition of the films have been indicated by FESEM and EDAX studies. A blue shift of the band gap energy and higher optical transmittance has been observed in the case of Al doped ZnO (ZnO:Al) thin films with respect to the ZnO thin films. The as deposited films on p-Si were used to fabricate n-ZnO/p-Si(100) and n-ZnO:Al/p-Si(100) heterojunction diodes and their room temperature current-voltage characteristics were studied.

Transport properties of doped AlP for the development of conductive AlP/GaP distributed Bragg reflectors and their integration into light-emitting diodes

NASA Astrophysics Data System (ADS)

Hestroffer, Karine; Sperlich, Dennis; Dadgostar, Shabnam; Golz, Christian; Krumland, Jannis; Masselink, William Ted; Hatami, Fariba

2018-05-01

The transport properties of n- and p-doped AlP layers grown by gas-source molecular beam epitaxy are investigated. n- and p-types of conductivities are achieved using Si and Be with peak room-temperature mobilities of 59.6 cm2/Vs and 65.0 cm2/Vs for electrons and holes, respectively. Si-doping results are then used for the design of n-doped AlP/GaP distributed Bragg reflectors (DBRs) with an ohmic resistance of about 7.5 ± 0.1 Ω. The DBRs are integrated as bottom mirrors in GaP-based light-emitting diodes (LEDs) containing InGaP/GaP quantum dots. The functionality of the LED structure and the influence of the DBRs on the InGaP/GaP electroluminescence spectra are demonstrated.

Nanostructure of aluminium (Al) - Doped zinc oxide (AZO) thin films

NASA Astrophysics Data System (ADS)

Hussin, Rosniza; Husin, M. Asri

2017-12-01

Aluminium (Al)-doped Zinc Oxide (ZnO) was deposited on glass substrates by using the sol-gel dip coating technique. Next, AZO sol-gel solution was produced via sol-gel method. Al was used as doped element with molar ratios of 1%, 2%, and 3%, while the calcination temperatures were set at 400°C, 500°C, and 600°C for 2 hours. In fact, characterization was carried out in order to determine the effect of calcination temperature and molar ratio of doping by using several techniques, such as X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM), and Ultraviolet-Visible spectroscopy (UV-Vis). XRD was performed to investigate the crystal structure in which the ZnO was in wurtzite hexagonal form. Next, Energy Dispersive Spectroscopy (EDS) was used to determine the composition of thin films where the result revealed the existence of zinc, oxygen, and aluminium. The roughness of the deposited film was later measured by using the AFM approach where the findings indicated increment in RMS from 8.496 nm to 35.883 nm as the temperature was increased. Additionally, FESEM was carried out to look into the microstructure surfaces of the deposited AZO thin film for increased temperature caused the particle to grow bigger for all molar ratio of dopant. Lastly, UV-Vis was conducted to study the optical properties of AZO, in which the result demonstrated that AZO thin film possessed the highest transmittance percentage among all samples above 90% with band gap value that ranged from 3.25 eV to 3.32 eV.

Observation of stimulated emission from a single Fe-doped AlN triangular fiber at room temperature

PubMed Central

Jiang, Liangbao; Jin, Shifeng; Wang, Wenjun; Zuo, Sibin; Li, Zhilin; Wang, Shunchong; Zhu, Kaixing; Wei, Zhiyi; Chen, Xiaolong

2015-01-01

Aluminum nitride (AlN) is a well known wide-band gap semiconductor that has been widely used in fabricating various ultraviolet photo-electronic devices. Herein, we demonstrate that a fiber laser can be achieved in Fe-doped AlN fiber where Fe is the active ion and AlN fiber is used as the gain medium. Fe-doped single crystal AlN fibers with a diameter of 20–50 μm and a length of 0.5–1 mm were preparated successfully. Stimulated emission (peak at about 607 nm and FWHM ~0.2 nm) and a long luminescence lifetime (2.5 ms) were observed in the fibers by a 532nm laser excitation at room temperature. The high quality long AlN fibers are also found to be good optical waveguides. This kind of fiber lasers may possess potential advantages over traditional fiber lasers in enhancing power output and extending laser wavelengths from infrared to visible regime. PMID:26647969

Enhancing photovoltaic performance of dye-sensitized solar cells by rare-earth doped oxide of SrAl{sub 2}O{sub 4}:Eu{sup 3+}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lijun; Guo, Weihua; Liaoning Provincial College Key Laboratory of New Materials and Material Modification, Dalian Polytechnic University, Dalian 116034

2016-04-15

Graphical abstract: Current–voltage characteristics of DSSCs based on the photoanodes doping different SrAl{sub 2}O{sub 4}:Eu{sup 3+} and doping 3% SrAl{sub 2}O{sub 4}. - Highlights: • A down-conversion (DC) nanocrystal (SrAl{sub 2}O{sub 4}:Eu{sup 3+}) was synthesized. • The effect of SrAl{sub 2}O{sub 4}:Eu{sup 3+} doped in photoanode in DSSCs was investigated. • SrAl{sub 2}O{sub 4}:Eu{sup 3+} doped in photoanode appeared the better photovoltaic performances. • The dual function of DC and p-type doping effect were explained. - Abstract: SrAl{sub 2}O{sub 4}:Eu{sup 3+} down-conversion (DC) nanocrystals were synthesized by a sol–gel method and then doped in TiO{sub 2} as a photoanode inmore » dye-sensitized solar cells (DSSCs). Differential thermal analysis, fourier transform infrared spectroscopy, X-ray diffraction and Brunauer–Emmet–Teller analysis confirmed the formation of SrAl{sub 2}O{sub 4}:Eu{sup 3+} nanocrystals with diameters of ∼47 nm, pore size of ∼25 nm, sintering temperature of 1300 °C. The photoluminescence and UV–vis absorption spectra of the SrAl{sub 2}O{sub 4}:Eu{sup 3+} revealed a DC from ultraviolet light to visible light which matched the strong absorbing region of the N719 dye. The photoelectric conversion efficiency of the DSSCs with a TiO{sub 2} photoanode doped with 3 wt% SrAl{sub 2}O{sub 4}:Eu{sup 3+} was 20% higher than that with a pure TiO{sub 2} photoanode. This phenomenon could be mainly explained by SrAl{sub 2}O{sub 4}:Eu{sup 3+} nanocrystals’ ability of DC and increased the short-circuit current density. It could be minorly due to the p-type doping effect and slightly improved the open-circuit voltage.« less

Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Patra, Saroj Kumar; Tran, Thanh-Nam; Vines, Lasse; Kolevatov, Ilia; Monakhov, Edouard; Fimland, Bjørn-Ove

2017-04-01

Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature Hall effect measurements, and dopant densities from secondary ion mass spectrometry depth profiling. An undoped Al0.3Ga0.7As cap layer and side wall passivation were used to reduce oxidation and improve accuracy in Hall effect measurements. The measurements on Be-doped samples revealed high doping efficiency and the carrier concentration varied linearly with dopant density up to the highest Be dopant density of 2.9 × 1019 cm-3, whereas for Te doped samples the doping efficiency was in general low and the carrier concentration saturated for Te-dopant densities above 8.0 × 1018 cm-3. The low doping efficiency in Te-doped Al0.9Ga0.1As0.06Sb0.94 layer was studied by deep-level transient spectroscopy, revealing existence of deep trap levels and related DX-centers which explains the low doping efficiency.

Synthesis and Characterization of Al-Doped Mg2Si Thermoelectric Materials

NASA Astrophysics Data System (ADS)

Battiston, S.; Fiameni, S.; Saleemi, M.; Boldrini, S.; Famengo, A.; Agresti, F.; Stingaciu, M.; Toprak, M. S.; Fabrizio, M.; Barison, S.

2013-07-01

Magnesium silicide (Mg2Si)-based alloys are promising candidates for thermoelectric (TE) energy conversion for the middle to high range of temperature. These materials are very attractive for TE research because of the abundance of their constituent elements in the Earth's crust. Mg2Si could replace lead-based TE materials, due to its low cost, nontoxicity, and low density. In this work, the role of aluminum doping (Mg2Si:Al = 1: x for x = 0.005, 0.01, 0.02, and 0.04 molar ratio) in dense Mg2Si materials was investigated. The synthesis process was performed by planetary milling under inert atmosphere starting from commercial Mg2Si pieces and Al powder. After ball milling, the samples were sintered by means of spark plasma sintering to density >95%. The morphology, composition, and crystal structure of the samples were characterized by field-emission scanning electron microscopy, energy-dispersive spectroscopy, and x-ray diffraction analyses. Moreover, Seebeck coefficient analyses, as well as electrical and thermal conductivity measurements were performed for all samples up to 600°C. The resultant estimated ZT values are comparable to those reported in the literature for these materials. In particular, the maximum ZT achieved was 0.50 for the x = 0.01 Al-doped sample at 600°C.

Synthesis and characterization of lithium aluminum-doped spinel (LiAl xMn 2- xO 4) for lithium secondary battery

NASA Astrophysics Data System (ADS)

Lee, Yun-Sung; Kumada, Naoki; Yoshio, Masaki

LiAl xMn 2- xO 4 has been synthesized using various aluminum starting materials, such as Al(NO 3) 3, Al(OH) 3, AlF 3 and Al 2O 3 at 600-800°C for 20 h in air or oxygen atmosphere. A melt-impregnation method was used to synthesize Al-doped spinel with good battery performance in this research. The Al-doped content and the intensity ratio of (3 1 1)/(4 0 0) peaks can be important parameters in synthesizing Al-doped spinel which satisfies the requirements of high discharge capacity and good cycleability at the same time. The decrease in Mn 3+ ion by Al substitution induces a high average oxidation state of Mn ion in the LiAl xMn 2- xO 4 material. The electrochemical behavior of all samples was studied in Li/LiPF 6-EC/DMC (1:2 by volume)/LiAl xMn 2- xO 4 cells. Especially, the initial and last discharge capacity of LiAl 0.09Mn 1.97O 4 using LiOH, Mn 3O 4 and Al(OH) 3 complex were 128.7 and 115.5 mAh/g after 100 cycles. The Al substitution in LiMn 2O 4 was an excellent method of enhancing the cycleability of stoichiometric spinel during electrochemical cycling.

Surface doping with Al in Ba-hexaferrite powders (abstract)

NASA Astrophysics Data System (ADS)

Turilli, G.; Paoluzi, A.; Lucenti, M.

1991-04-01

Barium M-hexaferrites were intensively studied in order to improve their magnetic characteristics for application as permanent magnets using different ion substitutions. However, substitutions that improve the BHmax energy product have not been found. We propose a new method in order to modify the extrinsic magnetic characteristics of Ba-hexaferrite powders without reducing drastically the magnetization and the magnetic anisotropy. This method consists in the surface doping of the hexaferrite particles, giving as a result a modification of the energy pinning of the domain walls at the grain boundary. Ba ferrite powders having a mean diameter of 3.2 μm have been dry mixed with Al2O3 powders with a diameter <0.5 μm. From the mixed powder a series of 10 cylindrically shaped samples was obtained by isostatically pressing the powders. The samples were thermically treated from 900 to 1200 °C, together with 10 cylindrical samples of pure hexaferrite, for 1 h each. For all the samples we have measured the Curie temperature (Tc), the anisotropy field (HA), the coercive field (Hc), and the saturation magnetization σ. The main results are that up to 1000 °C the Al diffusion is mainly localized at the surface of the grain so that the main part of the grain is undoped as confirmed by the Tc and HA values that are the same as those found in pure hexaferrites. From 900 to 1000 °C the saturation magnetization decreases of the 3% while Hc increases of the 9% with respect to the pure hexaferrite. This result seems to confirm the validity of the proposed method. Above 1000 °C Al begin to diffuse in the grain and above 1200 °C it is possible to say, from thermomagnetic analysis, that Al has diffused uniformly throughout the grain. In this last temperature range the Al substitution leads to a 10% reduction in σ as expected1 while Hc only increases 12%. These preliminary results suggest that the method of surface doping of the powders could be used in order to increase or

Growth and characterization of highly conducting Al-doped ZnO (AZO) thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Sardana, Sanjay K.; Singh, Anil; Srivastava, Sanjay K.; Pandya, Dinesh K.

2018-05-01

A comparative study of undoped ZnO and Al-doped ZnO (AZO) thin films deposited on glass substrate by spray pyrolysis has been carried out at various aqueous molar concentration of zinc acetate. The thin films deposited on glass shows the wurtzite phase of ZnO, confirmed by X-ray diffraction. The optical study shows the high transmittance over 80% in the visible regime. The band gap of AZO thin films shows a blue shift as compared to undoped ZnO, which has been attributed to Burstein-Moss shift. Heat treatment of these samples in vacuum showed the improved conductivity in compared to as-deposited thin films. The electric study shows the minimum resistivity of 8 x 10-3 Ω-cm and carrier concentration of 6.5 × 1019 /cm3 correspond to AZO thin films.

Colossal dielectric permittivity in (Al + Nb) co-doped rutile SnO2 ceramics with low loss at room temperature

NASA Astrophysics Data System (ADS)

Song, Yongli; Wang, Xianjie; Zhang, Xingquan; Qi, Xudong; Liu, Zhiguo; Zhang, Lingli; Zhang, Yu; Wang, Yang; Sui, Yu; Song, Bo

2016-10-01

The exploration of colossal dielectric permittivity (CP) materials with low dielectric loss in a wide range of frequencies/temperatures continues to attract considerable interest. In this paper, we report CP in (Al + Nb) co-doped rutile SnO2 ceramics with a low dielectric loss at room temperature. Al0.02Nb0.05Sn0.93O2 and Al0.03Nb0.05Sn0.92O2 ceramics exhibit high relative dielectric permittivities (above 103) and low dielectric losses (0.015 < tan δ < 0.1) in a wide range of frequencies and at temperatures from 140 to 400 K. Al doping can effectively modulate the dielectric behavior by increasing the grain and grain boundary resistances. The large differences in the resistance and conductive activation energy of the grains and grain boundaries suggest that the CP in co-doped SnO2 ceramics can be attributed to the internal barrier layer capacitor effect.

Doping the alkali atom: an effective strategy to improve the electronic and nonlinear optical properties of the inorganic Al12N12 nanocage.

PubMed

Niu, Min; Yu, Guangtao; Yang, Guanghui; Chen, Wei; Zhao, Xingang; Huang, Xuri

2014-01-06

Under ab initio computations, several new inorganic electride compounds with high stability, M@x-Al12N12 (M = Li, Na, and K; x = b66, b64, and r6), were achieved for the first time by doping the alkali metal atom M on the fullerene-like Al12N12 nanocage, where the alkali atom is located over the Al-N bond (b66/b64 site) or six-membered ring (r6 site). It is revealed that independent of the doping position and atomic number, doping the alkali atom can significantly narrow the wide gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) (EH-L = 6.12 eV) of the pure Al12N12 nanocage in the range of 0.49-0.71 eV, and these doped AlN nanocages can exhibit the intriguing n-type characteristic, where a high energy level containing the excess electron is introduced as the new HOMO orbital in the original gap of pure Al12N12. Further, the diffuse excess electron also brings these doped AlN nanostructures the considerable first hyperpolarizabilities (β0), which are 1.09 × 10(4) au for Li@b66-Al12N12, 1.10 × 10(4), 1.62 × 10(4), 7.58 × 10(4) au for M@b64-Al12N12 (M = Li, Na, and K), and 8.89 × 10(5), 1.36 × 10(5), 5.48 × 10(4) au for M@r6-Al12N12 (M = Li, Na, and K), respectively. Clearly, doping the heavier Na/K atom over the Al-N bond can get the larger β0 value, while the reverse trend can be observed for the series with the alkali atom over the six-membered ring, where doping the lighter Li atom can achieve the larger β0 value. These fascinating findings will be advantageous for promoting the potential applications of the inorganic AlN-based nanosystems in the new type of electronic nanodevices and high-performance nonlinear optical (NLO) materials.

Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al tahtamouni, T. M., E-mail: talal@yu.edu.jo; Lin, J. Y.; Jiang, H. X.

2014-04-15

Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

Cyan-white-red luminescence from europium doped Al2O3-La2O3-SiO2 glasses.

PubMed

Yang, Hucheng; Lakshminarayana, G; Zhou, Shifeng; Teng, Yu; Qiu, Jianrong

2008-04-28

Aluminum-lanthanum-silicate glasses with different Eu doping concentration have been synthesized by conventional melt-quenching method at 1680 degrees C in reductive atmosphere. Under 395nm excitation, samples with low Eu doping concentration show mainly the cyan broad emission at 460nm due to 4f(6)5d(1)-4f(7) transition of Eu(2+); and the samples with higher Eu doping concentration show mainly some narrow emissions with maximum at 616nm due to (5)D(0)-(7)F(j) (J=0, 1, 2, 3, 4) transitions of Eu(3+). Cyan-white-red tunable luminescence under 395nm excitation has been obtained by changing the Eu doping concentration.

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Atanassova, E.; Stojadinović, N.; Spassov, D.; Manić, I.; Paskaleva, A.

2013-05-01

The time-dependent dielectric breakdown (TDDB) characteristics of 7 nm pure and lightly Al-doped Ta2O5 (equivalent oxide thickness of 2.2 and 1.5 nm, respectively) with W gate electrodes in MOS capacitor configuration are studied using gate injection and constant voltage stress. The effect of both the process-induced defects and the dopant on the breakdown distribution, and on the extracted Weibull slope values, are discussed. The pre-existing traps which provoke weak spots dictate early breakdowns. Their effect is compounded of both the stress-induced new traps generation (percolation model is valid) and the inevitable lower-k interface layer in the region with long time-to-breakdown. The domination of one of these competitive effects defines the mechanism of degradation: the trapping at pre-existing traps appears to dominate in Ta2O5; Al doping reduces defects in Ta2O5, the generation of new traps prevails over the charge trapping in the doped samples, and the mechanism of breakdown is more adequate to the percolation concept. The doping of high-k Ta2O5 even with small amount (5 at.%) may serve as an engineering solution for improving its TDDB characteristics and reliability.

Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

NASA Astrophysics Data System (ADS)

Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

2016-12-01

DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C2H2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C2H2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C2H2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C2H2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus deteriorate the wear performance of the films.

Analytical electron microscopic studies and positron lifetime measurements in Al-doped MgO crystals

NASA Astrophysics Data System (ADS)

Pedrosa, M. A.; Pareja, R.; González, R.; Abraham, M. M.

1987-07-01

MgO crystals intentionally doped with Al were characterized by analytical electron microscopic examinations and positron lifetime measurements. Large spinel (MgO Al2O3) precipitates were observed in samples with high contents of Al. A well-defined crystallographic relationship between the precipitates and the matrix was found. The characteristics of positron lifetime spectra appear to depend on the valence state of the different impurities in the MgO lattice suggesting that positrons are trapped by vacancy impurity complexes.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

2016-06-01

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

Site-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation

PubMed Central

2014-01-01

In fabrication of nano- and quantum devices, it is sometimes critical to position individual dopants at certain sites precisely to obtain the specific or enhanced functionalities. With first-principles simulations, we propose a method for substitutional doping of individual atom at a certain position on a stepped metal surface by single-atom manipulation. A selected atom at the step of Al (111) surface could be extracted vertically with an Al trimer-apex tip, and then the dopant atom will be positioned to this site. The details of the entire process including potential energy curves are given, which suggests the reliability of the proposed single-atom doping method. PMID:24899871

Site-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation.

PubMed

Chen, Chang; Zhang, Jinhu; Dong, Guofeng; Shao, Hezhu; Ning, Bo-Yuan; Zhao, Li; Ning, Xi-Jing; Zhuang, Jun

2014-01-01

In fabrication of nano- and quantum devices, it is sometimes critical to position individual dopants at certain sites precisely to obtain the specific or enhanced functionalities. With first-principles simulations, we propose a method for substitutional doping of individual atom at a certain position on a stepped metal surface by single-atom manipulation. A selected atom at the step of Al (111) surface could be extracted vertically with an Al trimer-apex tip, and then the dopant atom will be positioned to this site. The details of the entire process including potential energy curves are given, which suggests the reliability of the proposed single-atom doping method.

Effect of Al doping on performance of ZnO thin film transistors

NASA Astrophysics Data System (ADS)

Dong, Junchen; Han, Dedong; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi

2018-03-01

In this work, we investigate the Aluminum-doped Zinc Oxide (AZO) thin films and their feasibility as the active layer for thin film transistors (TFTs). A comparison on performance is made between the AZO TFTs and ZnO TFTs. The electrical properties such as saturation mobility, subthreshold swing, and on-to-off current ratio are improved when AZO is utilized as the active layer. Oxygen component of the thin film materials indicates that Al is the suppressor for oxygen defect in active layer, which improves the subthreshold swing. Moreover, based on band structure analyzation, we observe that the carrier concentration of AZO is higher than ZnO, leading to the enhancement of saturation mobility. The microstructure of the thin films convey that the AZO films exhibit much smaller grain boundaries than ZnO films, which results in the lower off-state current and higher on-to-off current ratio of AZO TFTs. The AZO thin films show huge potential to be the active layer of TFTs.

Experimental and theoretical investigations on magnetic behavior of (Al,Co) co-doped ZnO nanoparticles.

PubMed

Jayakumar, O D; Achary, S N; Sudakar, C; Naik, R; Salunke, H G; Rao, Rekha; Peng, X; Ahuja, R; Tyagi, A K

2010-08-01

We present the structural and magnetic properties of Zn(0.95-x)Co(0.05)Al(x)O (x = 0.0 to 0.1) nanoparticles, synthesized by a novel sol-gel route followed by pyrolysis. Powder X-ray diffraction data confirms the formation of a single phase wurtzite type ZnO structure for all the compositions. The Zn(0.95)Co(0.05)O nanoparticles show diamagnetic behavior at room temperature. However, when Al is co-doped with Co with x = 0.0 to 0.10 in Zn(0.95-x)Co(0.05)Al(x)O, a systematic increase in ferromagnetic moment is observed up to x = 0.07 at 300 K. Above x = 0.07 (e.g. for x = 0.10) a drastic decrease in ferromagnetic nature is observed which is concomitant with the segregation of poorly crystalline Al rich ZnO phase as evidenced from TEM studies. Theoretical studies using density functional calculations on Zn(0.95-x)Co(0.05)Al(x)O suggest that the partial occupancy of S2 states leads to an increased double exchange interaction favoring the ferromagnetic ground states. Such ferromagnetic interactions are favorable beyond a threshold limit. At a high level doping of Al, the exchange splitting is reduced, which suppresses the ferromagnetic ordering.

Effects of Al(3+) doping on the structure and properties of goethite and its adsorption behavior towards phosphate.

PubMed

Li, Wei; Wang, Longjun; Liu, Fan; Liang, Xiaoliang; Feng, Xionghan; Tan, Wenfeng; Zheng, Lirong; Yin, Hui

2016-07-01

Al substitution in goethite is common in soils, and has strong influence on the structure and physicochemical properties of goethite. In this research, a series of Al-doped goethites were synthesized, and characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and extended X-ray absorption fine structure (EXAFS) spectroscopy. The adsorption behavior of these samples towards PO4(3-) was also investigated. Characterization results demonstrated that increasing Al content in goethite led to a reduction in crystallinity, increase in specific surface area (SSA), and morphology change from needle-like to granular. Rietveld structure refinement revealed that the lattice parameter a remained almost constant and b slightly decreased, but c was significantly reduced, and the calculated crystal density increased. EXAFS analysis demonstrated that the Fe(Al)-O distance in the structure of the doped goethites was almost the same, but the Fe-Fe(Al) distance decreased with increasing Al content. Surface analysis showed that, with increasing Al content, the content of OH groups on the mineral surface increased. The adsorption of phosphate per unit mass of Al-doped goethite increased, while adsorption per unit area decreased owing to the decrease of the relative proportion of (110) facets in the total surface area of the minerals. The results of this research facilitate better understanding of the effect of Al substitution on the structure and properties of goethite and the cycling of phosphate in the environment. Copyright © 2016. Published by Elsevier B.V.

Room temperature synthesis of Mn2+ doped ZnS d-dots and observation of tunable dual emission: Effects of doping concentration, temperature, and ultraviolet light illumination

NASA Astrophysics Data System (ADS)

Kole, A. K.; Tiwary, C. S.; Kumbhakar, P.

2013-03-01

Mn2+ doped (0-50.0 molar %) ZnS d-dots have been synthesized in water medium by using an environment friendly low cost chemical technique. Tunable dual emission in UV and yellow-orange regions is achieved by tailoring the Mn2+ doping concentration in the host ZnS nanocrystal. The optimum doping concentration for achieving efficient photoluminescence (PL) emission is determined to be ˜1.10 (at. %) corresponding to 40.0 (molar %) of Mn2+ doping concentration used during synthesis. The mechanism of charge transfer from the host to the dopant leading to the intensity modulated tunable (594-610 nm) yellow-orange PL emission is straightforwardly understood as no capping agent is used. The temperature dependent PL emission measurements are carried out, viz., in 1.10 at. % Mn2+ doped sample and the experimental results are explained by using a theoretical PL emission model. It is found that the ratio of non-radiative to radiative recombination rates is temperature dependent and this phenomenon has not been reported, so far, in Mn2+ doped ZnS system. The colour tuning of the emitted light from the samples are evident from the calculated chromaticity coordinates. UV light irradiation for 150 min in 40.0 (molar %) Mn2+ doped sample shows an enhancement of 33% in PL emission intensity.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.

2015-01-28

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV.more » Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.« less

Crystal Growth and Scintillation Properties of Ce Doped Gd3Ga,Al5O12 Single Crystals

NASA Astrophysics Data System (ADS)

Kamada, Kei; Yanagida, Takayuki; Pejchal, Jan; Nikl, Martin; Endo, Takanori; Tsutsumi, Kousuke; Fujimoto, Yutaka; Fukabori, Akihiro; Yoshikawa, Akira

2012-10-01

Ce1%, 2% and 3% doped Gd3(Ga,Al)5O12 (GAGG) single crystals were grown by the Cz method. Luminescence and scintillation properties were measured. Light yield change along the growth direction and effects of Ce concentration on scintillation properties in Ce:GAGG were studied. Ce3+ 5d-4f emission within 520-530 nm was observed in the Ce:GAGG crystals. The Ce1%:GAGG sample with 3×3×1 mm size showed the highest light yield of 46000 photon/MeV. The energy resolution was 7.8%@662 keV. With increasing solidification fraction, the LY were decreased. It is proposed that the increase of Ga concentration along the growth direction is the main cause of the decrease of LY. The scintillation decay times were accelerated with increasing Ce concentration in the Ce:GAGG crystals. The scintillation decay times were 92.0 ns, 79.1 ns and 68.3 ns in the Ce1, 2 and 3% GAGG, respectively.

Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors

NASA Astrophysics Data System (ADS)

Honma, T.; Hor, P. H.

2006-09-01

We argue that in cuprate physics there are two types, hole content per CuO2 plane (Ppl) and the corresponding hole content per unit volume (P3D), of hole-doping concentrations for addressing physical properties that are two dimensional (2D) and three dimensional (3D) in nature, respectively. We find that the superconducting transition temperature (Tc) varies systematically with P3D as a superconducting 'dome' with a universal optimal hole-doping concentration of P3Dopt = 1.6 × 1021 cm-3 for single-layer high-temperature superconductors. We suggest that P3Dopt determines the upper bound of the electronic energy of underdoped single-layer high-Tc cuprates.

Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

NASA Astrophysics Data System (ADS)

Cunningham, Brian Thomas

1990-01-01

A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

The electronic response of pristine, Al and Si doped BC2N nanotubes to a cathinone molecule: Computational study

NASA Astrophysics Data System (ADS)

Nejati, Kamellia; Vessally, Esmail; Delir Kheirollahi Nezhad, Parvaneh; Mofid, Hadi; Bekhradnia, Ahmadreza

2017-12-01

Cathinone (CT) is a psychoactive drug which its abuse is linked to several deaths worldwide. Here, we investigated the electronic response of BC2N nanotubes to the CT drug, using density functional theory calculations. Our results indicate that the CT drug is adsorbed on the pristine tube from its -NH2 group with ad adsorption energy about -14.6 kcal/mol with no electronic response. To overcome this problem, we doped the tube with Al or Si atom. Both of the Al and Si dopants increase the tube sensitivity and strengthen the interaction. Our calculations demonstrate that despite the high sensitivity of the Al-doped BC2N nanotube to the CT drug, it suffers from a very long recovery time which makes it unsuitable for application in CT sensors. But the calculated recovery time for the Si-doped BC2N nanotube is predicted to be about 0.27 s, which is short and desirable. Also, we showed that the Si-doped tube can be used in the humidity condition and at the presence of some gases including H2, O2, N2, and CO2. It was concluded that Si-doped BC2N nanotubes may be promising candidate for application in the CT sensors which benefit form a short recovery time, high sensitivity, and selectivity.

Physical properties of heavily boron doped silicon

NASA Astrophysics Data System (ADS)

Grockowiak, Audrey; Marcenat, Christophe; Klein, Thierry; Prudon, Gilles; Dubois, Christiane; Kociniewski, Thierry; Debarre, Dominique

2012-02-01

The discovery of superconductivity (SC) in heavily boron doped silicon in 2006 by [1] occurred shortly after diamond in 2004 by [2]. However, the SC in these 2 materials occurs differently. For diamond, the SC is obtained for a boron concentration close to the metal-insulator transition (MIT), while for silicon, the onset of superconductivity is obtained well above the MIT threshold. The aim of this study is to determine the influence of different parameters that impact the SC, such as the doping concentration nB, or the thickness of the layer. Interpolation between resistivity measurements of Tc(nB) and ab initio calculations of the electron phonon coupling λ(nB) showed a complete mismatch of the dependency of λ(Tc) with the BSC MacMillan exponential law. The results obtained suggest rather a power law dependence such as λ α Tc^2. This dependency suggests a fractal dimension of the superconducting wave function as reported by Feigel'man et al. [3]. [4pt] [1] E. Bustarret et al., Nature (London) 444, 465 (2006).[0pt] [2] E. Ekimov et al. (2004). Nature 428: 542[0pt] [3] Feigel'man et al., arXiv:1002.0859

ALD Al2O3 passivation of Lg = 100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates

NASA Astrophysics Data System (ADS)

Sun, Bing; Chang, Hudong; Wang, Shengkai; Niu, Jiebin; Liu, Honggang

2017-12-01

In0.52Al0.48As/In0.7Ga0.3As metamorphic high-electron-mobility transistors (mHEMTs) on GaAs substrates have been demonstrated. The devices feature an epitaxial structure with Si-doped InP/In0.52Al0.48As Schottky layers, together with an atomic layer deposition (ALD) Al2O3 passivation process. In comparison to the GaAs mHEMTs with plasma enhanced chemical vapor deposition (PECVD) SiN passivation, the devices with ALD Al2O3 passivation exhibit more than one order of magnitude lower gate leakage current (Jg) and much lower contact resistance (RC) and specific contact resistivity (ρC). 100-nm gate length (Lg) In0.52Al0.48As/In0.7Ga0.3As mHEMTs with Si-doped InP/In0.52Al0.48As Schottky layers and ALD Al2O3 passivation exhibit excellent DC and RF characteristics, such as a maximum oscillation frequency (fmax) of 388.2 GHz.

Solution-processed organic thermoelectric materials exhibiting doping-concentration-dependent polarity.

PubMed

Hwang, Sunbin; Potscavage, William J; Yang, Yu Seok; Park, In Seob; Matsushima, Toshinori; Adachi, Chihaya

2016-10-26

Recent progress in conducting polymer-based organic thermoelectric generators (OTEGs) has resulted in high performance due to high Seebeck coefficient, high electrical conductivity (σ), and low thermal conductivity obtained by chemically controlling the materials's redox levels. In addition to improving the properties of individual OTEGs to obtain high performance, the development of solution processes for the fabrication of OTEG modules is necessary to realize large thermoelectric voltage and low-cost mass production. However, the scarcity of good candidates for soluble organic n-type materials limits the use of π-leg module structures consisting of complementary elements of p- and n-type materials because of unbalanced transport coefficients that lead to power losses. In particular, the extremely low σ of n-type materials compared with that of p-type materials is a serious challenge. In this study, poly(pyridinium phenylene) (P(PymPh)) was tested as an n-type semiconductor in solution-processed OTEGs, and the carrier density was controlled by a solution-based chemical doping process using the dopant sodium naphthalenide, a well-known reductant. The electronic structures and doping mechanism of P(PymPh) were explored based on the changes in UV-Vis-IR absorption, ultraviolet photoelectron, and X-ray photoelectron spectra. By controlling the dopant concentration, we demonstrate a maximum n-type power factor of 0.81 μW m -1 K -2 with high σ, and at higher doping concentrations, a switch from n-type to p-type TE operation. This is one of the first cases of a switch in polarity just by increasing the concentration of the reductant and may open a new route for simplified fabrication of complementary organic layers.

Doping effect on charge ordering in the spinel compound AlV_2-xCr_xO_4

NASA Astrophysics Data System (ADS)

Horibe, Yoichi; Kurushima, Kosuke; Mori, Shigeo; Shingu, Masao; Katsufuji, Takuro

2004-03-01

It is reported that AlV_2O4 with the spinel-type structure shows the charge-ordering (CO) behavior below 700K.[1] Because the average valence of V is V^2.5+ in this compound, the CO structure is characterized by the unique CO pattern with V^2+:V^4+=3:1. In this talk, we will report doping effect on the CO structure in AlV_2O_4. In particular, we will focus on changes of microstructure related to the CO structure by Cr doping by transmission electron microscopy. Firstly we confirmed that AlV_2O4 has a long-ranged CO structure characterized by a single wave vector q=(1/2)[111]. On the other hand, we found the presence of diffuse scatterings at the (1/2)[111] and (1/2)[1-11]-type positions in AlV_1.875Cr_0.125O4 at room temperature. This means that the CO structure in AlV_1.875Cr_0.125O4 has two wave vectors of q=(1/2)[111] and q=the (1/2)[1-11]. Furthermore, the long-ranged CO structure in AlV_2O4 changes into the short-ranged one by substituting Cr ions into the V ones. The correlation length of CO in x=0.125 can be estimated to be about 5 nm. Our results suggest that the Cr doping destroyed the CO correlation effectively. It is revealed that by substituting Cr ions to V ones, the CO state is suppressed drastically and disappeared with x > 0.125. [1] K. Matsuno et al., J. Phys. Soc. Jpn 70, 1456 (2001)

Near-Unity Emitting Copper-Doped Colloidal Semiconductor Quantum Wells for Luminescent Solar Concentrators.

PubMed

Sharma, Manoj; Gungor, Kivanc; Yeltik, Aydan; Olutas, Murat; Guzelturk, Burak; Kelestemur, Yusuf; Erdem, Talha; Delikanli, Savas; McBride, James R; Demir, Hilmi Volkan

2017-08-01

Doping of bulk semiconductors has revealed widespread success in optoelectronic applications. In the past few decades, substantial effort has been engaged for doping at the nanoscale. Recently, doped colloidal quantum dots (CQDs) have been demonstrated to be promising materials for luminescent solar concentrators (LSCs) as they can be engineered for providing highly tunable and Stokes-shifted emission in the solar spectrum. However, existing doped CQDs that are aimed for full solar spectrum LSCs suffer from moderately low quantum efficiency, intrinsically small absorption cross-section, and gradually increasing absorption profiles coinciding with the emission spectrum, which together fundamentally limit their effective usage. Here, the authors show the first account of copper doping into atomically flat colloidal quantum wells (CQWs). In addition to Stokes-shifted and tunable dopant-induced photoluminescence emission, the copper doping into CQWs enables near-unity quantum efficiencies (up to ≈97%), accompanied by substantially high absorption cross-section and inherently step-like absorption profile, compared to those of the doped CQDs. Based on these exceptional properties, the authors have demonstrated by both experimental analysis and numerical modeling that these newly synthesized doped CQWs are excellent candidates for LSCs. These findings may open new directions for deployment of doped CQWs in LSCs for advanced solar light harvesting technologies. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

First-principles investigation of CO adsorption on pristine, C-doped and N-vacancy defected hexagonal AlN nanosheets

NASA Astrophysics Data System (ADS)

Ouyang, Tianhong; Qian, Zhao; Ahuja, Rajeev; Liu, Xiangfa

2018-05-01

The optimized atomic structures, energetics and electronic structures of toxic gas CO adsorption systems on pristine, C-doped and N-vacancy defected h-AlN nanosheets respectively have been investigated using Density functional theory (DFT-D2 method) to explore their potential gas detection or sensing capabilities. It is found that both the C-doping and the N-vacancy defect improve the CO adsorption energies of AlN nanosheet (from pure -3.847 eV to -5.192 eV and -4.959 eV). The absolute value of the system band gap change induced by adsorption of CO can be scaled up to 2.558 eV or 1.296 eV after C-doping or N-vacancy design respectively, which is evidently larger than the value of 0.350 eV for pristine material and will benefit the robustness of electronic signals in potential gas detection. Charge transfer mechanisms between CO and the AlN nanosheet have been presented by the Bader charge and differential charge density analysis to explore the deep origin of the underlying electronic structure changes. This theoretical study is proposed to predict and understand the CO adsorption properties of the pristine and defected h-AlN nanosheets and would help to guide experimentalists to develop better AlN-based two-dimensional materials for efficient gas detection or sensing applications in the future.

P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

NASA Astrophysics Data System (ADS)

le Febvrier, Arnaud; Van Nong, Ngo; Abadias, Gregory; Eklund, Per

2018-05-01

Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.

AlMn Transition Edge Sensors for Advanced ACTPol

NASA Astrophysics Data System (ADS)

Li, Dale; Austermann, Jason E.; Beall, James A.; Becker, Daniel T.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Hilton, Gene C.; Ho, Shuay-Pwu; Hubmayr, Johannes; Koopman, Brian J.; McMahon, Jeffrey J.; Nati, Federico; Niemack, Michael D.; Pappas, Christine G.; Salatino, Maria; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Van Lanen, Jeff; Ward, Jonathan T.; Wollack, Edward J.

2016-07-01

Advanced ACTPol (AdvACT) will use an array of multichroic polarization-sensitive AlMn transition edge sensor (TES) bolometers read out through time-division multiplexing. Aluminum doped with a low concentration of manganese can be deposited to a bulk film thickness for a more reliable superconducting critical temperature uniformity compared to thin bilayers. To build the TES, the AlMn alloy is deposited, over Nb wiring, to a specific thickness to set the TES normal resistance. The doping concentration of manganese coarsely defines the TES critical temperature, while a fine tuning is achieved by heating the deposited film to a specific temperature. The TES island is connected to the thermal bath via four silicon-nitride membranes, where their geometry defines the thermal conductance to the temperature of the bath. Lastly, the TES heat capacity is increased by addition of PdAu electrically connected to the AlMn film. Designs and performance characteristics of these AlMn TESs are presented for use in AdvACT.

Stabilization of MgAl2O4 spinel surfaces via doping

NASA Astrophysics Data System (ADS)

Hasan, Md. M.; Dholabhai, Pratik P.; Castro, Ricardo H. R.; Uberuaga, Blas P.

2016-07-01

Surface structure of complex oxides plays a vital role in processes such as sintering, thin film growth, and catalysis, as well as being a critical factor determining the stability of nanoparticles. Here, we report atomistic calculations of the low-index stoichiometric magnesium aluminate spinel (MgAl2O4) surfaces, each with two different chemical terminations. High temperature annealing was used to explore the potential energy landscape and provide more stable surface structures. We find that the lowest energy surface is {100} while the highest energy surface is {111}. The surfaces were subsequently doped with three trivalent dopants (Y3+, Gd3+, La3+) and one tetravalent dopant (Zr4+) and both the surface segregation energies of the dopants and surface energies of the doped surface were determined. All of the dopants reduce the surface energy of spinel, though this reduction in energy depends on both the size and valence of the dopant. Dopants with larger ionic radius tend to segregate to the surface more strongly and reduce the surface energy to a greater extent. Furthermore, the ionic valence of the dopants seems to have a stronger influence on the segregation than does ionic size. For both undoped and doped spinel, the predicted crystal shape is dominated by {100} surfaces, but the relative fraction of the various surfaces changes with doping due to the unequal changes in energy, which has implications on equilibrium nanoparticle shapes and therefore on applications sensitive to surface properties.

Effects of Concentration of Nanoscale Tin-Doped Indium Oxide on Electrical Breakdown of High-Resistance Liquid Crystal

NASA Astrophysics Data System (ADS)

Liang, Bau-Jy; Liu, Don-Gey; Chang, Chih-Yuan; Shie, Wun-Yi

2011-05-01

According to our previous study, a high concentration of nanoscale tin-doped indium oxide (ITO) may be beneficial for protecting liquid crystal (LC) against attacks by electrostatic discharge (ESD). In this study, the influence of high-voltage stresses in an ESD test was investigated for cells doped with different concentrations of ITO. It was found that nano-ITO with a concentration of 0.4% in weight ratio deteriorated the physical properties of LC of transparency transition and charge retention. However, our experiment showed that the capability of ESD protection for the doped LC was still improved at the ITO concentration of 0.4 wt %. This finding supports the proposed model in our previous report. The role of ITO in the LC is not always beneficial, as discussed in this paper.

Studies on frequency dependent electrical and dielectric properties of sintered zinc oxide pellets: effects of Al-doping

NASA Astrophysics Data System (ADS)

Tewari, S.; Ghosh, A.; Bhattacharjee, A.

2016-11-01

Sintered pellets of zinc oxide (ZnO), both undoped and Al-doped are prepared through a chemical process. Dopant concentration of Aluminium in ZnO [Al/Zn in weight percentage (wt%)] is varied from 0 to 3 wt%. After synthesis structural characterisation of the samples are performed with XRD and SEM-EDAX which confirm that all the samples are of ZnO having polycrystalline nature with particle size from 108.6 to 116 nm. Frequency dependent properties like a.c. conductivity, capacitance, impedance and phase angle are measured in the frequency range 10 Hz to 100 kHz as a function of temperature (in the range 25-150 °C). Nature of a.c. conductivity in these samples indicates hopping type of conduction arising from localised defect states. The frequency and temperature dependent properties under study are found to be as per correlated barrier hoping model. Dielectric and impedance properties studied in the samples indicate distributed relaxation, showing decrease of relaxation time with temperature.

Effect of Co doping concentration on structural properties and optical parameters of Co-doped ZnO thin films by sol-gel dip-coating method.

PubMed

Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young

2014-11-01

The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.

Optical characterization of pure and Al-doped ZnO prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Belka, Radosław; Keczkowska, Justyna; Kasińska, Justyna

2016-09-01

In this paper the preparation process and optical characterization of pure and Al3+ doped zinc oxide (Al:ZnO) coatings will be presented. ZnO based materials have been studied extensively due to their potential applications in optoelectronic devices as conductive gas sensors, transparent conductive, electrodes, solar cell windows, varistors, UVfilters or photovoltaic cells. It is II-VI semiconductor with wide-band gap of 3.37 eV and large exciton binding energy of 60meV. It is possible to improve the conductivity of ZnO coating by intentionally doping ZnO with aluminium ions during preparation process. Such transparent and conducting thin films, known as AZO (Aluminium Zinc Oxide) films, are very good candidate for application as transparent conducting materials in many optoelectronic devices. The well-known sol-gel method is used for preparation of solution, coated on glass substrates by dip coating process. Prepared samples were investigated by Raman and UV-VIS spectroscopy. Transmittance as well as specular and diffuse reflectance spectroscopy methods were used for studies of optical parameters. We found that Al admixture influences on optical bandgap of ZnO.

Influence of Nb Doping Concentration on Bolometric Properties of RF Magnetron Sputtered Nb:TiO2- x Films

NASA Astrophysics Data System (ADS)

Reddy, Y. Ashok Kumar; Shin, Young Bong; Kang, In-Ku; Lee, Hee Chul

2018-03-01

The present study directly addresses the improved bolometric properties by means of different Nb doping concentrations into TiO2- x films. The x-ray diffraction patterns do not display any obvious diffraction peaks, suggesting that all the films deposited at room temperature had an amorphous structure. A small binding energy shift was observed in x-ray photo electron spectroscopy due to the change of chemical composition with Nb doping concentration. All the device samples exhibit linear I- V characteristics, which attests to the formation of good ohmic contact with low contact resistance between the Nb:TiO2- x (TNO) film and the electrode (Ti) material. The performance of the bolometric material can be evaluated through the temperature coefficient of resistance (TCR), and the absolute value of TCR was found to be increased from 2.54% to 2.78% with increasing the Nb doping concentration. The voltage spectral density of 1/ f noise was measured in the frequency range of 1-60 Hz and found to be decreased with increase of Nb doping concentration. As a result, for 1 at.% Nb-doped TNO sample exhibits improved bolometric properties towards the good infrared image sensor device.

Effect of Fe doping concentration on photocatalytic activity of ZnO nanosheets under natural sunlight

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khokhra, Richa; Kumar, Rajesh, E-mail: rajesh.kumar@juit.ac.in

2015-05-15

A facile room temperature, aqueous solution-based chemical method has been adopted for large-scale synthesis of Fe doped ZnO nanosheets. The XRD and SEM results reveal the as-synthesized products well crystalline and accumulated by large amount of interweave nanosheets, respectively. Energy dispersive spectroscopy data confirmed Fe doping of the ZnO nanosheets with a varying Fe concentration. The photoluminescence spectrum reveals a continuous suppression of defect related emissions intensity by increasing the concentration of the Fe ion. A photocatalytic activity using these samples under sunlight irradiation in the mineralization of methylene blue dye was investigated. The photocatalytic activity of Fe doped ZnOmore » nanosheets depends upon the presence of surface oxygen vacancies.« less

Yb-doped aluminophosphosilicate ternary fiber with high efficiency and excellent laser stability

NASA Astrophysics Data System (ADS)

Li, Yuwei; Peng, Kun; Zhan, Huan; Liu, Shuang; Ni, Li; Wang, Yuying; Yu, Juan; Wang, Xiaolong; Wang, Jianjun; Jing, Feng; Lin, Aoxiang

2018-03-01

By using chelate precursor doping technique and traditional modified chemical vapor deposition system, we fabricated Yb-doped aluminophosphosilicate (Al2O3-P2O5-SiO2, ternary Yb-APS) large-mode-area fiber and reported on its laser performance. The fiber preform was doped with Al, P and Yb with concentration of ∼8000 ppm, ∼1700 ppm and ∼400 ppm in molar percent, respectively. Tested with master oscillator power amplifier system, the home-made Yb-APS fiber was found to present 1.02 kW at 1061.1 nm with a high slope efficiency of 81.2% and excellent laser stability with power fluctuation less than ±1.1% for over 10 h. Compared with Yb-doped aluminosilicate (Al2O3-SiO2, binary Yb-AS) fiber, the introduction of P2O5 effectively suppressed photodarkening effect even the P/Al ratio is much less than 1, indicating that Yb-APS fiber is a better candidate for high power fiber lasers.

Quantification of urinary AICAR concentrations as a matter of doping controls.

PubMed

Thomas, Andreas; Beuck, Simon; Eickhoff, Jens Christian; Guddat, Sven; Krug, Oliver; Kamber, Matthias; Schänzer, Wilhelm; Thevis, Mario

2010-04-01

Influencing the endurance in elite sports is one of the key points in modern sports science. Recently, a new class of prohibited substances reached in the focus of doping control laboratories and their misuse was classified as gene doping. The adenosine monophosphate activated protein kinase activator 5-amino-4-imidazolecarboxyamide ribonucleoside (AICAR) was found to significantly enhance the endurance even in sedentary mice after treatment. Due to endogenous production of AICAR in healthy humans, considerable amounts were present in the circulation and, thus, were excreted into urine. Considering these facts, the present study was initiated to fix reference values of renally cleared AICAR in elite athletes. Therefore a quantitative analytical method by means of isotope-dilution liquid chromatography (analytical column: C6-phenyl) coupled to tandem mass spectrometry, after a sample preparation consisting of a gentle dilution of native urine, was developed. Doping control samples of 499 athletes were analysed, and AICAR concentrations in urine were determined. The mean AICAR value for all samples was 2,186 ng/mL with a standard deviation of 1,655 ng/mL. Concentrations were found to differ depending on gender, type of sport and type of sample collection (in competition/out of competition). The method was fully validated for quantitative purposes considering the parameters linearity, inter- (12%, 7% and 10%) and intraday precision (14%, 9% and 12%) at low, mid and high concentration, robustness, accuracy (approx. 100%), limit of quantification (100 ng/mL), stability and ion suppression effects, employing an in-house synthesised (13)C(5)-labelled AICAR as internal standard.

Synthesis and study of the synthetic hydroxyapatite doped with aluminum

NASA Astrophysics Data System (ADS)

Goldberg, M.; Smirnov, V.; Antonova, O.; Konovalov, A.; Fomina, A.; Komlev, V. S.; Barinov, S.; Rodionov, A.; Gafurov, M.; Orlinskii, S.

2018-05-01

Powders of synthetic hydroxyapatite doped with aluminium (Al) ions in concentrations 0 and 20 mol. % were synthesized by the precipitation method from the nitrate solutions and investigated by atomic emission spectrometry with inductively coupled plasma (AES-ICP), X-ray diffraction (XRD), scanning electron microscopy (SEM), gas absorption and conventional electron paramagnetic resonance (EPR). It is shown that for the chosen synthesis route an introduction of Al provokes formation of highly anisotropic phase, leads to the decrease in the crystallinity while no significant changes in the EPR spectra of the radiation-induced defects is observed. The results could be used for understanding the structural transformations with Al doping of the mineralized materials for geological and biomedical applications.

Luminescence of delafossite-type CuAlO2 fibers with Eu substitution for Al cations

PubMed Central

Liu, Yin; Gong, Yuxuan; Mellott, Nathan P.; Wang, Bu; Ye, Haitao; Wu, Yiquan

2016-01-01

Abstract CuAlO2 has been examined as a potential luminescent material by substituting Eu for Al cations in the delafossite structure. CuAlO2:Eu3+ nanofibers have been prepared via electrospinning for the ease of mitigating synthesis requirements and for future optoelectronics and emerging applications. Single-phase CuAlO2 fibers could be obtained at a temperature of 1100 °C in air. The Eu was successfully doped in the delafossite structure and two strong emission bands at ~405 and 610 nm were observed in the photoluminescence spectra. These bands are due to the intrinsic near-band-edge transition of CuAlO2 and the f-f transition of the Eu3+ activator, respectively. Further electrical characterization indicated that these fibers exhibit semiconducting behavior and the introduction of Eu could act as band-edge modifiers, thus changing the thermal activation energies. In light of this study, CuAlO2:Eu3+ fibers with both strong photoluminescence and p-type conductivity could be produced by tailoring the rare earth doping concentrations. PMID:27877870

Luminescence of delafossite-type CuAlO2 fibers with Eu substitution for Al cations

NASA Astrophysics Data System (ADS)

Liu, Yin; Gong, Yuxuan; Mellott, Nathan P.; Wang, Bu; Ye, Haitao; Wu, Yiquan

2016-01-01

CuAlO2 has been examined as a potential luminescent material by substituting Eu for Al cations in the delafossite structure. CuAlO2:Eu3+ nanofibers have been prepared via electrospinning for the ease of mitigating synthesis requirements and for future optoelectronics and emerging applications. Single-phase CuAlO2 fibers could be obtained at a temperature of 1100 °C in air. The Eu was successfully doped in the delafossite structure and two strong emission bands at 405 and 610 nm were observed in the photoluminescence spectra. These bands are due to the intrinsic near-band-edge transition of CuAlO2 and the f-f transition of the Eu3+ activator, respectively. Further electrical characterization indicated that these fibers exhibit semiconducting behavior and the introduction of Eu could act as band-edge modifiers, thus changing the thermal activation energies. In light of this study, CuAlO2:Eu3+ fibers with both strong photoluminescence and p-type conductivity could be produced by tailoring the rare earth doping concentrations.

Luminescence of delafossite-type CuAlO2 fibers with Eu substitution for Al cations.

PubMed

Liu, Yin; Gong, Yuxuan; Mellott, Nathan P; Wang, Bu; Ye, Haitao; Wu, Yiquan

2016-01-01

CuAlO 2 has been examined as a potential luminescent material by substituting Eu for Al cations in the delafossite structure. CuAlO 2 :Eu 3+ nanofibers have been prepared via electrospinning for the ease of mitigating synthesis requirements and for future optoelectronics and emerging applications. Single-phase CuAlO 2 fibers could be obtained at a temperature of 1100 °C in air. The Eu was successfully doped in the delafossite structure and two strong emission bands at ~405 and 610 nm were observed in the photoluminescence spectra. These bands are due to the intrinsic near-band-edge transition of CuAlO 2 and the f-f transition of the Eu 3+ activator, respectively. Further electrical characterization indicated that these fibers exhibit semiconducting behavior and the introduction of Eu could act as band-edge modifiers, thus changing the thermal activation energies. In light of this study, CuAlO 2 :Eu 3+ fibers with both strong photoluminescence and p-type conductivity could be produced by tailoring the rare earth doping concentrations.

Thermoluminescence and optically stimulated luminescence properties of Dy3+-doped CaO-Al2O3-B2O3-based glasses

NASA Astrophysics Data System (ADS)

Yahaba, T.; Fujimoto, Y.; Yanagida, T.; Koshimizu, M.; Tanaka, H.; Saeki, K.; Asai, K.

2017-02-01

We developed Dy3+-doped CaO-Al2O3-B2O3 based glasses with Dy concentrations of 0.5, 1.0, and 2.0 mol% using a melt-quenching technique. The as-synthesized glasses were applicable as materials exhibiting thermoluminescence (TL) and optically stimulated luminescence (OSL). The optical and radiation response properties of the glasses were characterized. In the photoluminescence (PL) spectra, two emission bands due to the 4F9/2 → 6H15/2 and 4F9/2 → 6H13/2 transitions of Dy3+ were observed at 480 and 580 nm. In the OSL spectra, the emission band due to the 4F9/2 → 6H15/2 transition of Dy3+ was observed. Excellent TL and OSL responses were observed for dose ranges of 0.1-90 Gy. In addition, TL fading behavior was better than that of OSL in term of the long-time storage. These results indicate that the Dy3+-doped CaO-Al2O3-B2O3-based glasses are applicable as TL materials.

Thermoelectric Properties of Hot-Pressed and PECS-Sintered Magnesium-Doped Copper Aluminum Oxide

NASA Astrophysics Data System (ADS)

Liu, Chang; Morelli, Donald T.

2011-05-01

Copper aluminum oxide (CuAlO2) is considered as a potential candidate for thermoelectric applications. Partially magnesium-doped CuAlO2 bulk pellets were fabricated using solid-state reactions, hot-pressing, and pulsed electric current sintering (PECS) techniques. X-ray diffraction and scanning electron microscopy were adopted for structural analysis. High-temperature transport property measurements were performed on hot-pressed samples. Electrical conductivity increased with Mg doping before secondary phases became significant, while the Seebeck coefficient displayed the opposite trend. Thermal conductivity was consistently reduced as the Mg concentration increased. Effects of Mg doping, preparation conditions, and future modification on this material's properties are discussed.

Formation and nitrile hydrogenation performance of Ru nanoparticles on a K-doped Al2O3 surface.

PubMed

Muratsugu, Satoshi; Kityakarn, Sutasinee; Wang, Fei; Ishiguro, Nozomu; Kamachi, Takashi; Yoshizawa, Kazunari; Sekizawa, Oki; Uruga, Tomoya; Tada, Mizuki

2015-10-14

Decarbonylation-promoted Ru nanoparticle formation from Ru3(CO)12 on a basic K-doped Al2O3 surface was investigated by in situ FT-IR and in situ XAFS. Supported Ru3(CO)12 clusters on K-doped Al2O3 were converted stepwise to Ru nanoparticles, which catalyzed the selective hydrogenation of nitriles to the corresponding primary amines via initial decarbonylation, the nucleation of the Ru cluster core, and the growth of metallic Ru nanoparticles on the surface. As a result, small Ru nanoparticles, with an average diameter of less than 2 nm, were formed on the support and acted as efficient catalysts for nitrile hydrogenation at 343 K under hydrogen at atmospheric pressure. The structure and catalytic performance of Ru catalysts depended strongly on the type of oxide support, and the K-doped Al2O3 support acted as a good oxide for the selective nitrile hydrogenation without basic additives like ammonia. The activation of nitriles on the modelled Ru catalyst was also investigated by DFT calculations, and the adsorption structure of a nitrene-like intermediate, which was favourable for high primary amine selectivity, was the most stable structure on Ru compared with other intermediate structures.

Stabilization of MgAl 2O 4 spinel surfaces via doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hasan, Md. M.; Dholabhai, Pratik P.; Castro, Ricardo H. R.

Here, the surface structure of complex oxides plays a vital role in processes such as sintering, thin film growth, and catalysis, as well as being a critical factor determining the stability of nanoparticles. We report atomistic calculations of the low-index stoichiometric magnesium aluminate spinel (MgAl 2O 4) surfaces, each with two different chemical terminations. High temperature annealing was used to explore the potential energy landscape and provide more stable surface structures. We find that the lowest energy surface is {100} while the highest energy surface is {111}. The surfaces were subsequently doped with three trivalent dopants (Y 3+, Gd 3+,more » La 3+) and one tetravalent dopant (Zr 4+) and both the surface segregation energies of the dopants and surface energies of the doped surface were determined. All of the dopants reduce the surface energy of spinel, though this reduction in energy depends on both the size and valence of the dopant. Dopants with larger ionic radius tend to segregate to the surface more strongly and reduce the surface energy to a greater extent. Furthermore, the ionic valence of the dopants seems to have a stronger influence on the segregation than does ionic size. For both undoped and doped spinel, the predicted crystal shape is dominated by {100} surfaces, but the relative fraction of the various surfaces changes with doping due to the unequal changes in energy, which has implications on equilibrium nanoparticle shapes and therefore on applications sensitive to surface properties.« less

Stabilization of MgAl 2O 4 spinel surfaces via doping

DOE PAGES

Hasan, Md. M.; Dholabhai, Pratik P.; Castro, Ricardo H. R.; ...

2016-02-06

Here, the surface structure of complex oxides plays a vital role in processes such as sintering, thin film growth, and catalysis, as well as being a critical factor determining the stability of nanoparticles. We report atomistic calculations of the low-index stoichiometric magnesium aluminate spinel (MgAl 2O 4) surfaces, each with two different chemical terminations. High temperature annealing was used to explore the potential energy landscape and provide more stable surface structures. We find that the lowest energy surface is {100} while the highest energy surface is {111}. The surfaces were subsequently doped with three trivalent dopants (Y 3+, Gd 3+,more » La 3+) and one tetravalent dopant (Zr 4+) and both the surface segregation energies of the dopants and surface energies of the doped surface were determined. All of the dopants reduce the surface energy of spinel, though this reduction in energy depends on both the size and valence of the dopant. Dopants with larger ionic radius tend to segregate to the surface more strongly and reduce the surface energy to a greater extent. Furthermore, the ionic valence of the dopants seems to have a stronger influence on the segregation than does ionic size. For both undoped and doped spinel, the predicted crystal shape is dominated by {100} surfaces, but the relative fraction of the various surfaces changes with doping due to the unequal changes in energy, which has implications on equilibrium nanoparticle shapes and therefore on applications sensitive to surface properties.« less

Ethanol Sensor of CdO/Al2O3/CeO2 Obtained from Ce-DOPED Layered Double Hydroxides with High Response and Selectivity

NASA Astrophysics Data System (ADS)

Xu, Dongmei; Guan, Meiyu; Xu, Qinghong; Guo, Ying; Wang, Yao

2013-04-01

In this paper, Ce-doped CdAl layered double hydroxide (LDH) was first synthesized and the derivative CdO/Al2O3/CeO2 composite oxide was prepared by calcining Ce-doped CdAl LDH. The structure, morphology and chemical state of the Ce doped CdAl LDH and CdO/Al2O3/CeO2 were also investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), solid state nuclear magnetic resonance (SSNMR), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The gas sensing properties of CdO/Al2O3/CeO2 to ethanol were further studied and compared with CdO/Al2O3 prepared from CdAl LDH, CeO2 powder as well as the calcined Ce salt. It turns out that CdO/Al2O3/CeO2 sensor shows best performance in ethanol response. Besides, CdO/Al2O3/CeO2 possesses short response/recovery time (12/72 s) as well as remarkable selectivity in ethanol sensing, which means composite oxides prepared from LDH are very promising in gas sensing application.

Textural, Structural and Biological Evaluation of Hydroxyapatite Doped with Zinc at Low Concentrations

PubMed Central

Predoi, Daniela; Iconaru, Simona Liliana; Deniaud, Aurélien; Chevallet, Mireille; Michaud-Soret, Isabelle; Buton, Nicolas; Prodan, Alina Mihaela

2017-01-01

The present work was focused on the synthesis and characterization of hydroxyapatite doped with low concentrations of zinc (Zn:HAp) (0.01 < xZn < 0.05). The incorporation of low concentrations of Zn2+ ions in the hydroxyapatite (HAp) structure was achieved by co-precipitation method. The physico-chemical properties of the samples were characterized by X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), zeta-potential, and DLS and N2-BET measurements. The results obtained by XRD and FTIR studies demonstrated that doping hydroxyapatite with low concentrations of zinc leads to the formation of a hexagonal structure with lattice parameters characteristic to hydroxyapatite. The XRD studies have also shown that the crystallite size and lattice parameters of the unit cell depend on the substitutions of Ca2+ with Zn2+ in the apatitic structure. Moreover, the FTIR analysis revealed that the water content increases with the increase of zinc concentration. Furthermore, the Energy Dispersive X-ray Analysis (EDAX) and XPS analyses showed that the elements Ca, P, O, and Zn were found in all the Zn:HAp samples suggesting that the synthesized materials were zinc doped hydroxyapatite, Ca10−xZnx(PO4)6(OH), with 0.01 ≤ xZn ≤ 0.05. Antimicrobial assays on Staphylococcus aureus and Escherichia coli bacterial strains and HepG2 cell viability assay were carried out. PMID:28772589

Synthesis and luminescent properties of Gd3Ga2Al3O12 phosphors doped with Eu3+ or Ce3+

NASA Astrophysics Data System (ADS)

Oh, M. J.; Kim, H. J.

2016-09-01

Eu3+-or Ce3+-doped gadolinium gallium aluminum garnet (GGAG), Gd3Ga2Al3O12, phosphors are fabricated using solid-state reactions with Gd2O3, Ga2O3, Al2O3, CeO2 and Eu2O3 powders. The Eu3+-or Ce3+-doped Gd3Ga2Al3O12 phosphors are sintered at 1300 °C or 1600 °C for 5 hours by using an electric furnace under normal atmosphere. X-ray diffraction and field-emission scanning electron microscopy studies are carried out in order to analyze the physical properties of these materials, and their luminescence properties are also measured by using UV and X-ray sources. The Eu3+-or Ce3+-doped Gd3Ga2Al3O12 phosphors show higher light yields in comparison to commercial phosphors such as Gd2O2S:Tb (gadox). This indicates that Gd3Ga2Al3O12:Eu3+ phosphors are promising materials for use in X-ray imaging and dose monitoring at proton beamlines.

Effect of Pr3+doping on key properties of CdO thin films deposited by spray pyrolysis using perfume atomizer

NASA Astrophysics Data System (ADS)

Ravikumar, M.; Chandramohan, R.; Kumar, K. Deva Arun; Valanarasu, S.; Kathalingam, A.; Ganesh, V.; Shkir, Mohd.; AlFaify, S.; Algarni, H.

2018-07-01

High quality Cadmium oxide thin films doped with Praseodymium (Pr) were prepared using perfume atomizer based spray pyrolysis technique at substrate temperature near 350 °C. Structural analysis of films was examined by XRD and confirmed that the films are cubic in structure. All un-doped and doped films were good crystalline in nature with smooth and flat surface without significant modifications owed to doping. Optical transmittances of doped films was decrease in the visible and IR range with increasing Pr doping concentration. Band gap widened from 2.42 to 2.20 eV when doped with Pr from 0 to 5 at. %. In addition, the photoluminescence property of the films was also observed. Further, the electrical studies were performed on pure and doped samples Viz., the electrical resistivity, carrier concentration (ρ) and Hall mobility (μ). It confirmed that the deposited films has good structural environments in terms of grain size, absolute stress correspond and low resistivity. Current-voltage measurements on the nanostructured Al/Pr-nCdO/p-Si/Al device showed a non-linear electric characteristics indicating diode like behavior.

Tailored white light emission in Eu3+/Dy3+ doped tellurite glass phosphors containing Al3+ ions

NASA Astrophysics Data System (ADS)

Walas, Michalina; Piotrowski, Patryk; Lewandowski, Tomasz; Synak, Anna; Łapiński, Marcin; Sadowski, Wojciech; Kościelska, Barbara

2018-05-01

Tellurite glass systems modified by addition of aluminum fluoride AlF3 have been successfully synthesized as host matrices for optically active rare earth ions RE3+ (RE3+ = Eu3+, Dy3+). Samples with different Eu3+ to Dy3+ molar ratio have been studied in order to determine possibility of white light emission via UV excitation. Structural investigations confirmed amorphous character of materials whereas spectroscopic studies brought more insight into glass network's nature. FTIR results shown presence of two features related to tellurite glass matrix (in 490-935 cm-1 spectral region) and another one (940-1250 cm-1) due to aluminum addition. Especially, Al-O and Te-O-Al bonds of AlO4 tetrahedrons have been found. AlO4 units are considered as glass formers that improve network's strength and thermal resistivity against devitrification. Based on XPS studies of Al3+ photoelectron band the existence of Al-O and also Al-F bonds have been examined. Moreover, signals originating from Eu3+ and Dy3+ have been found confirming their valence state. Luminescence results revealed possibility of simultaneous UV excitation of Eu3+ and Dy3+ ions. Excitation with λexc = 390 and 393 nm resulted in white light generation starting from warm white to neutral and cool white depending on Eu3+ concentration and used excitation wavelength. Additionally, increase of decay lifetime of Eu3+ induced by Al3+ presence have been revealed based on luminescence decay analysis. Thus, tellurite glass systems modified by AlF3 and doped with Eu3+/Dy3+ may be considered as promising candidates for white light emitting sources.

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

NASA Astrophysics Data System (ADS)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range

NASA Astrophysics Data System (ADS)

Usikov, Alexander S.; Shapvalova, Elizaveta V.; Melnik, Yuri V.; Ivantsov, Vladimir A.; Dmitriev, Vladimir A.; Collins, Charles J.; Sampath, Anand V.; Garrett, Gregory A.; Shen, Paul H.; Wraback, Michael

2004-12-01

In this paper we report on the fabrication and characterization of GaN, AlGaN, and AlN layers grown by hydride vapor phase epitaxy (HVPE). The layers were grown on 2-inch and 4-inch sapphire and 2-inch silicon carbide substrates. Thickness of the GaN layers was varied from 2 to 80 microns. Surface roughness, Rms, for the smoothest GaN layers was less than 0.5 nm, as measured by AFM using 10 μm x 10 μm scans. Background Nd-Na concentration for undoped GaN layers was less than 1x1016 cm-3. For n-type GaN layers doped with Si, concentration Nd-Na was controlled from 1016 to 1019 cm-3. P-type GaN layers were fabricated using Mg doping with concentration Na-Nd ranging from 4x1016 to 3x1018 cm-3, for various samples. Zn doping also resulted in p-type GaN formation with concnetration ND-NA in the 1017 cm-3 range. UV transmission, photoluminescence, and crystal structure of AlGaN layers with AlN concentration up to 85 mole.% were studied. Dependence of optical band gap on AlGaN alloy composition was measured for the whole composition range. Thick (up to 75 microns) crack-free AlN layers were grown on SiC substrates. Etch pit density for such thick AlN layers was in the 107 cm-2 range.

Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.

PubMed

Xu, Jin; Zhang, Wei; Peng, Meng; Dai, Jiangnan; Chen, Changqing

2018-06-01

The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1  Ω/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs.

A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO

NASA Astrophysics Data System (ADS)

Saniz, R.; Xu, Y.; Matsubara, M.; Amini, M. N.; Dixit, H.; Lamoen, D.; Partoens, B.

2013-01-01

The calculation of defect levels in semiconductors within a density functional theory approach suffers greatly from the band gap problem. We propose a band gap correction scheme that is based on the separation of energy differences in electron addition and relaxation energies. We show that it can predict defect levels with a reasonable accuracy, particularly in the case of defects with conduction band character, and yet is simple and computationally economical. We apply this method to ZnO doped with group III elements (Al, Ga, In). As expected from experiment, the results indicate that Zn substitutional doping is preferred over interstitial doping in Al, Ga, and In-doped ZnO, under both zinc-rich and oxygen-rich conditions. Further, all three dopants act as shallow donors, with the +1 charge state having the most advantageous formation energy. Also, doping effects on the electronic structure of ZnO are sufficiently mild so as to affect little the fundamental band gap and lowest conduction bands dispersion, which secures their n-type transparent conducting behavior. A comparison with the extrapolation method based on LDA+U calculations and with the Heyd-Scuseria-Ernzerhof hybrid functional (HSE) shows the reliability of the proposed scheme in predicting the thermodynamic transition levels in shallow donor systems.

Reduced mobility and PPC in In(.20)Ga(.80)As / Al(.23)Ga(.77)As HEMT structure

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, Rafael A.; Haugland, Edward J.; Alterovitz, Samuel A.

1992-01-01

Transport properties of a pseudomorphic In(.20)Ga(.80)As/Al(.23)Ga(.77)As High Electron Mobility Transistor (HEMT) structure were measured by Hall and SdH techniques. Two samples of identical structures but with different doping levels were compared. Low temperature mobility measurements as a function of concentration coincides with the onset of second subband occupancy, indicating that the decrease in mobility is due to intersubband scattering. In spite of the low Al content (23 percent), large persistent photoconductivity (PPC) was observed in the highly doped sample only, showing a direct correlation between the PPC and doping concentration of the barrier layer.

Doping effect on the structural properties of Cu1-x(Ni, Zn, Al and Fe)xO samples (0

NASA Astrophysics Data System (ADS)

Amaral, J. B.; Araujo, R. M.; Pedra, P. P.; Meneses, C. T.; Duque, J. G. S.; dos S. Rezende, M. V.

2016-09-01

In this work, the effect of insertion of transition metal, TM (=Ni, Zn, Al and Fe), ions in Cu1-xTMxO samples (0doping, Ni and Zn-doped samples show a small amount of spurious phases for concentrations above x=0.05. Based on these results, a defect disorder study for using atomistic computational simulations which is based on the lattice energy minimization technique is employed to predict the location of the dopant ions in the structure. In agreement with XRD data, our computational results indicate that the trivalent (Al and Fe ions) are more favorable to be incorporated into CuO matrix than the divalent (Ni and Zn ions).

Synthesis and effect of Ce and Mn co-doping on photoluminescence characteristics of Ca6AlP5O20:Eu novel phosphors.

PubMed

Shinde, K N; Dhoble, S J

2013-01-01

A series of Ca6AlP5O20 doped with rare earths (Eu and Ce) and co-doped (Eu, Ce and Eu,Mn) were prepared by combustion synthesis. Under Hg-free excitation, Ca6AlP5O20:Eu exhibited Eu(2+) (486 nm) emission in the blue region of the spectrum and under near Hg excitation (245 nm), Ca6AlP5O20:Ce phosphor exhibited Ce(3+) emission (357 nm) in the UV range. Photoluminescence (PL) peak intensity increased in Ca6AlP5O20:Eu,Ce and Ca6AlP5O20:Eu, Mn phosphors due to co-activators of Ce(3+) and Mn(2+) ions. As a result, these ions played an important role in PL emission in the present matrix. Ca6AlP5O20:Eu, Ce and Ca6AlP5O20:Eu, Mn phosphors provided energy transfer mechanisms via Ce(3+) → Eu(2+) and Eu(2+) → Mn(2+), respectively. Eu ions acted as activators and Ce ions acted as sensitizers. Ce emission energy was well matched with Eu excitation energy in the case of Ca6AlP5O20:Eu, Ce and Eu ions acted as activators and Mn ions acted as sensitizers in Ca6AlP5O20:Eu, Mn. This study included synthesis of new and efficient phosphate phosphors. The impact of doping and co-doping on photoluminescence properties and energy transfer mechanisms were investigated and we propose a feasible interpretation. Copyright © 2012 John Wiley & Sons, Ltd.

Direct Observation of Surface Potential Distribution in Insulation Resistance Degraded Acceptor-Doped BaTiO3 Multilayered Ceramic Capacitors

NASA Astrophysics Data System (ADS)

Hong, Kootak; Lee, Tae Hyung; Suh, Jun Min; Park, Jae-Sung; Kwon, Hyung-Soon; Choi, Jaeho; Jang, Ho Won

2018-05-01

Insulation resistance (IR) degradation in BaTiO3 is a key issue for developing miniaturized multilayer ceramic capacitors (MLCCs) with high capacity. Despite rapid progress in BaTiO3-based MLCCs, the mechanism of IR degradation is still controversial. In this study, we demonstrate the Al doping effect on IR degradation behavior of BaTiO3 MLCCs by electrical measurements and scanning Kelvin probe microscopy (SKPM). As the Al doping concentration in BaTiO3 increases, IR degradation of MLCCs seems to be suppressed from electrical characterization results. However, SKPM results reveal that the conductive regions near the cathode become lager with Al doping after IR degradation. The formation of conducting regions is attributed to the migration of oxygen vacancies, which is the origin of IR degradation in BaTiO3, in dielectric layers. These results imply that acceptor doping in BaTiO3 solely cannot suppress the IR degradation in MLCC even though less asymmetric IR characteristics and IR degradation in MLCCs with higher Al doping concentration are observed from electrical characterization. Our results strongly suggest that observing the surface potential distribution in IR degraded dielectric layers using SKPM is an effective method to unravel the mechanism of IR degradation in MLCCs.

AlMn Transition Edge Sensors for Advanced ACTPol

NASA Technical Reports Server (NTRS)

Li, Dale; Austermann, Jason E.; Beall, James A.; Tucker, Daniel T.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Hilton, Gene C.; Ho, Shuay-Pwu; Hubmayr, Johannes;

DFT studies on the Al, B, and P doping of silicene

NASA Astrophysics Data System (ADS)

Hernández Cocoletzi, H.; Castellanos Águila, J. E.

2018-02-01

The search for efficient adsorbents of atoms and molecules has motivated the study of systems in the presence of defects. For this reason, we have investigated theoretically the creation of mono- and di-vacancies on single layer silicene, as well as the Al, B, and P doping of silicene. Using the first-principles method with the generalized gradient approximation in the parameterization of Perdew-Burke-Ernzerhof, we have found that Al, B, and P interact strongly with Si atoms. Besides, when the vacancies are generated, the dangling bonds are saturated in pairs to form new bonds. Optimal geometries, binding energies, density of states (DOS) and charge density are reported. The results suggest that new chemical modifications can be used to modify the electronic properties of single-layer silicene.

Controlling the optical properties of polyaniline doped by boric acid particles by changing their doping agent and initiator concentration

NASA Astrophysics Data System (ADS)

Cabuk, Mehmet; Gündüz, Bayram

2017-12-01

In this study, polyaniline doped by boric acid (PAni:BA) conducting polymers were chemically synthesized by oxidative polymerization method using (NH4)2S208 (APS) as initiator. Pani:BA conducting polymers were synthesized by using two different APS/aniline molar ratios as 1:1 and 2:1. Their results were compared with PAni doped by HCl (PAni) conducting polymer. Structural properties of the PAni, PAni:BA (1:1) and PAni:BA (2:1) conducting polymers were characterized by using FTIR, SEM, TGA, particle size and apparent density measurements. Effects of doping agents and initiator concentrations on optical properties were investigated in detail. The optoelectronic parameters such as absorption band edge, molar extinction coefficient, direct allowed band gap, refractive index, optical conductance and electrical conductance of the PAni, PAni:BA (1:1) and PAni:BA (2:1) were determined. The absorption band edge and direct allowed band gap of PAni were decreased with doping BA and increasing APS ratio. Also, the refractive index values of the materials were calculated from experimental results and compared with obtained results from Moss, Ravindra, Herve-Vandamme, Reddy and Kumar-Singh relations.

Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.

PubMed

Greenberg, Benjamin L; Ganguly, Shreyashi; Held, Jacob T; Kramer, Nicolaas J; Mkhoyan, K Andre; Aydil, Eray S; Kortshagen, Uwe R

2015-12-09

Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation.

Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy

NASA Astrophysics Data System (ADS)

Brinciotti, Enrico; Gramse, Georg; Hommel, Soeren; Schweinboeck, Thomas; Altes, Andreas; Fenner, Matthias A.; Smoliner, Juergen; Kasper, Manuel; Badino, Giorgio; Tuca, Silviu-Sorin; Kienberger, Ferry

2015-08-01

We present a new method to extract resistivity and doping concentration of semiconductor materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using a three error parameters de-embedding workflow, the S11 raw data are converted into calibrated capacitance and resistance images where no calibration sample is required. The SMM capacitance and resistance values were measured at 18 GHz and ranged from 0 to 100 aF and from 0 to 1 MΩ, respectively. A tip-sample analytical model that includes tip radius, microwave penetration skin depth, and semiconductor depletion layer width has been applied to extract resistivity and doping concentration from the calibrated SMM resistance. The method has been tested on two doped silicon samples and in both cases the resistivity and doping concentration are in quantitative agreement with the data-sheet values over a range of 10-3 Ω cm to 101 Ω cm, and 1014 atoms per cm3 to 1020 atoms per cm3, respectively. The measured dopant density values, with related uncertainties, are [1.1 +/- 0.6] × 1018 atoms per cm3, [2.2 +/- 0.4] × 1017 atoms per cm3, [4.5 +/- 0.2] × 1016 atoms per cm3, [4.5 +/- 1.3] × 1015 atoms per cm3, [4.5 +/- 1.7] × 1014 atoms per cm3. The method does not require sample treatment like cleavage and cross-sectioning, and high contact imaging forces are not necessary, thus it is easily applicable to various semiconductor and materials science investigations.

Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires

NASA Astrophysics Data System (ADS)

Sonner, M.; Treu, J.; Saller, K.; Riedl, H.; Finley, J. J.; Koblmüller, G.

2018-02-01

We report the effects of intentional n-type doping on the photoluminescence (PL) properties of InAs nanowires (NWs). Employing silicon (Si) as a dopant in molecular beam epitaxy grown NWs, the n-type carrier concentration is tuned between 1 × 1017 cm-3 and 3 × 1018 cm-3 as evaluated from Fermi-tail fits of the high-energy spectral region. With the increasing carrier concentration, the PL spectra exhibit a distinct blueshift (up to ˜50 meV), ˜2-3-fold peak broadening, and a redshift of the low-energy tail, indicating both the Burstein-Moss shift and bandgap narrowing. The low-temperature bandgap energy (EG) decreases from ˜0.44 eV (n ˜ 1017 cm-3) to ˜0.41 eV (n ˜ 1018 cm-3), following a ΔEG ˜ n1/3 dependence. Simultaneously, the PL emission is quenched nearly 10-fold, while the pump-power dependent analysis of the integrated PL intensity evidences a typical 2/3-power-law scaling, indicative of non-radiative Auger recombination at high carrier concentrations. Carrier localization and activation at stacking defects are further observed in undoped InAs NWs by temperature-dependent measurements but are absent in Si-doped InAs NWs due to the increased Fermi energy.

Anchorage of γ-Al 2O 3 nanoparticles on nitrogen-doped multiwalled carbon nanotubes

DOE PAGES

Rodríguez-Pulido, A.; Martínez-Gutiérrez, H.; Calderon-Polania, G. A.; ...

2016-06-07

Nitrogen-doped multiwalled carbon nanotubes (CNx-MWNTs) have been decorated with γ-Al 2O 3 nanoparticles by a novel method. This process involved a wet chemical approach in conjunction with thermal treatment. During the particle anchoring process, individual CNx-MWNT nanotubes agglomerated into bundles, resulting in arrays of aligned CNx-MWNT coated with γ-Al 2O 3. Extensive characterization of the resulting γ-Al 2O 3/CNx-MWNT bundles was performed using a range of electron microscopy imaging and microanalytical techniques. In conclusion, a possible mechanism explaining the nanobundle alignment is described, and possible applications of these materials for the fabrication of ceramic composites using CNx-MWNTs are briefly discussed.

Ho3+-doped AlF3-TeO2-based glass fibers for 2.1 µm laser applications

NASA Astrophysics Data System (ADS)

Wang, S. B.; Jia, Z. X.; Yao, C. F.; Ohishi, Y.; Qin, G. S.; Qin, W. P.

2017-05-01

Ho3+-doped AlF3-TeO2-based glass fibers based on AlF3-BaF2-CaF2-YF3-SrF2-MgF2-TeO2 glasses are fabricated by using a rod-in-tube method. The glass rod including a core and a thick cladding layer is prepared by using a suction method, where the thick cladding layer is used to protect the core from the effect of surface crystallization during the fiber drawing. By inserting the glass rod into a glass tube, the glass fibers with relatively low loss (~2.3 dB m-1 @ 1560 nm) are prepared. By using a 38 cm long Ho3+-doped AlF3-TeO2-based glass fiber as the gain medium and a 1965 nm fiber laser as the pump source, 2065 nm lasing is obtained for a threshold pump power of ~220 mW. With further increasing the pump power to ~325 mW, the unsaturated output power of the 2065 nm laser is about 82 mW and the corresponding slope efficiency is up to 68.8%. The effects of the gain fiber length on the lasing threshold, the slope efficiency, and the operating wavelength are also investigated. Our experimental results show that Ho3+-doped AlF3-TeO2-based glass fibers are promising gain media for 2.1 µm laser applications.

Nb and Ta layer doping effects on the interfacial energetics and electronic properties of LaAlO3/SrTiO3 heterostructure: first-principles analysis.

PubMed

Nazir, Safdar; Behtash, Maziar; Cheng, Jianli; Luo, Jian; Yang, Kesong

2016-01-28

The two-dimensional electron gas (2DEG) formed at the n-type (LaO)(+1)/(TiO2)(0) interface in the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) has emerged as a prominent research area because of its great potential for nanoelectronic applications. Due to its practical implementation in devices, desired physical properties such as high charge carrier density and mobility are vital. In this respect, 4d and 5d transition metal doping near the interfacial region is expected to tailor electronic properties of the LAO/STO HS system effectively. Herein, we studied Nb and Ta-doping effects on the energetics, electronic structure, interfacial charge carrier density, magnetic moment, and the charge confinements of the 2DEG at the n-type (LaO)(+1)/(TiO2)(0) interface of LAO/STO HS using first-principles density functional theory calculations. We found that the substitutional doping of Nb(Ta) at Ti [Nb(Ta)@Ti] and Al [Nb(Ta)@Al] sites is energetically more favorable than that at La [Nb(Ta)@La] and Sr [Nb(Ta)@Sr] sites, and under appropriate thermodynamic conditions, the changes in the interfacial energy of HS systems upon Nb(Ta)@Ti and Nb(Ta)@Al doping are negative, implying that the formation of these structures is energetically favored. Our calculations also showed that Nb(Ta)@Ti and Nb(Ta)@Al doping significantly improve the interfacial charge carrier density with respect to that of the undoped system, which is because the Nb(Ta) dopant introduces excess free electrons into the system, and these free electrons reside mainly on the Nb(Ta) ions and interfacial Ti ions. Hence, along with the Ti 3d orbitals, the Nb 4d and Ta 5d orbitals also contribute to the interfacial metallic states; accordingly, the magnetic moments on the interfacial Ti ions increase significantly. As expected, the Nb@Al and Ta@Al doped LAO/STO HS systems show higher interfacial charge carrier density than the undoped and other doped systems. In contrast, Nb@Ti and Ta@Ti doped systems may

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yan, Long; Zhang, Yuantao; Han, Xu; Deng, Gaoqiang; Li, Pengchong; Yu, Ye; Chen, Liang; Li, Xiaohang; Song, Junfeng

2018-04-01

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0-0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ˜17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm-3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

Strong far-infrared intersubband absorption under normal incidence in heavily n-type doped nonalloy GaSb-AlSb superlattices

NASA Technical Reports Server (NTRS)

Samoska, L. A.; Brar, Berinder; Kroemer, H.

1993-01-01

We report on long-wavelength intersubband absorption under normal incidence in heavily doped binary-binary GaSb-AlSb superlattices. Due to a small energy difference between the ellipsoidal L valleys in GaSb and the low-density-of-states Gamma minimum, electrons spill over from the first Gamma subband into the higher-energy L subband in GaSb wells, where they are allowed to make an intersubband transition under normally incident radiation. A peak fractional absorption per quantum well of 6.8 x 10 exp 3 (absorption coefficient alpha of about 8500/cm) is observed at about 15 microns wavelength for a sheet concentration of 1.6 x 10 exp 12 sq cm/well.

Dehydrogenation kinetics and reversibility of LiAlH4-LiBH4 doped with Ti-based additives and MWCNT

NASA Astrophysics Data System (ADS)

Thaweelap, Natthaporn; Utke, Rapee

2016-11-01

Dehydrogenation kinetics and reversibility of LiAlH4-LiBH4 doped with Ti-based additives (TiCl3 and Ti-isopropoxide), multiwall carbon nanotubes (MWCNT), and MWCNT impregnated with Ti-based additives are proposed. Reduction of dehydrogenation temperature as well as improvements of kinetics and reversibility, especially decomposition of thermodynamically stable hydride (LiBH4) is obtained from the samples doped with Ti-isopropoxide and MWCNT. This can be due to the fact that the formations of LixAl(1-x)B2 and LiH-Al containing phase during dehydrogenation favor decomposition of LiH, leading to increment of hydrogen capacity, and stabilization of boron in solid state, resulting in improvement of reversibility. Besides, the curvatures and thermal conductivity of MWCNT benefit hydrogen diffusion and heat transfer during de/rehydrogenation. Nevertheless, deficient hydrogen content reversible is observed in all samples due to the irreversible of LiAlH4 and/or Li3AlH6 as well as the formation of stable phase (Li2B12H12) during de/rehydrogenation.

Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

NASA Astrophysics Data System (ADS)

Jiang, Xin-He; Shi, Jun-Jie; Zhang, Min; Zhong, Hong-Xia; Huang, Pu; Ding, Yi-Min; He, Ying-Ping; Cao, Xiong

2015-12-01

To resolve the p-type doping problem of Al-rich AlGaN alloys, we investigate the influence of biaxial and hydrostatic strains on the activation energy, formation energy and band gap of Mg-doped GaN, AlN, Al0.83Ga0.17N disorder alloy and (AlN)5/(GaN)1 superlattice based on first-principles calculations by combining the standard DFT and hybrid functional. We find that the Mg acceptor activation energy {{E}\\text{A}} , the formation energy {{E}\\text{f}} and the band gap {{E}\\text{g}} decrease with increasing the strain ɛ. The hydrostatic strain has a more remarkable impact on {{E}\\text{g}} and {{E}\\text{A}} than the biaxial strain. Both {{E}\\text{A}} and {{E}\\text{g}} have a linear dependence on the hydrostatic strain. For the biaxial strain, {{E}\\text{g}} shows a parabolic dependence on ɛ if \\varepsilon ≤slant 0 while it becomes linear if \\varepsilon ≥slant 0 . In GaN and (AlN)5/(GaN)1, {{E}\\text{A}} parabolically depends on the biaxial compressive strain and linearly depends on the biaxial tensible strain. However, the dependence is approximately linear over the whole biaxial strain range in AlN and Al0.83Ga0.17N. The Mg acceptor activation energy in (AlN)5/(GaN)1 can be reduced from 0.26 eV without strain to 0.16 (0.22) eV with the hydrostatic (biaxial) tensible strain 3%.

Evolution of the mechanical and tribological properties of DLC thin films doped with low-concentration hafnium on 316L steel

NASA Astrophysics Data System (ADS)

Qi, Meng; Xiao, Jianrong; Gong, Chenyang; Jiang, Aihua; Chen, Yong

2018-01-01

Low concentrations (<1 at%) of hafnium doped into diamond-like thin films (Hf-DLC) were deposited on 316L stainless steel and silicon (1 0 0) substrates by magnetron sputtering to attain superior mechanical and tribological properties. Ar and CH4 were used as source gases. The microstructure, chemical composition, and morphology of the Hf-DLC thin films in various concentrations were analyzed using x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Results showed that Hf species transferred from the particulate microstructure to Hf carbide phases, and the surface roughness increased monotonically with increasing Hf concentration. Moreover, the hardness and elastic modulus exhibited high values when the doped Hf concentration was 0.42 at%. Similarly, the tribological behaviors and wear life of Hf-DLC thin films had a low friction coefficient and excellent wear resistance at 0.42 at% Hf concentration. Therefore, 0.42 at% Hf is an optimal doping concentration to improve the mechanical and tribological properties of DLC thin films. Generally, the use of low-concentration Hf doping into DLC thin films is novel, and the present results provide guidance for the selection of suitable and effective concentration to optimize Hf-DLC thin films with superior performance.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

AlGaAs diode pumped tunable chromium lasers

DOEpatents

Krupke, William F.; Payne, Stephen A.

1992-01-01

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

PubMed

Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

2015-05-05

For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

NASA Astrophysics Data System (ADS)

Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

2015-05-01

For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

Preparation and characterization of Miocene clay powders in the region of Taza (Morocco) after doping with metal oxides Al2O3

NASA Astrophysics Data System (ADS)

Mesrar, L.; Lakrim, M.; Akdim, M.; Benmar, A.; –Sbai, N. ES; Jabrane, R.

2017-03-01

The marl’s minerals are abundant untreated material in several areas worldwide. They are often under-valued for human use. However, due to demands of the society in terms of sustainability and energy saving, the valuation of these resources to develop new materials, most environmentally friendly has become a concern both scientific and industrial aims. Ceramics are the growing research to obtain materials with good chemical stability and good hot properties [1]. The balance between these properties and industrial requirements allowed clay materials uses at craft departure (pottery, tile), to progress towards high-tech applications such as electrical and thermal insulation, electric candle, sound insulation [2]. The behavior of the doping (Al2O3), which has more scientific research interest, has been a renewed interest since 1980 [3] with the emergence of alumina very high purity. Miocene marl is one of the widespread geological substrates in Fez-Taza vicinity (Central Morocco). In this study we proceed by a physicochemical characterization of the marl after doping with metal oxides, by various analytical techniques, namely the X-ray fluorescence, the mineralogical analysis and geotechnical test. The doping of these marl was conducted by solid oxides of Al2O3 at different percentages (5%, 10% and 15%). The results of chemical analysis showed the Al2O3 increase during doping. So, the mineralogical analysis of doped clays shows peaks’ increases for kaolin. The marl doped acquired the property of their good plasticity and good mechanical resistance compared to crass marl.

Low doping concentration studies of doped PVA-Coumarin nanocomposite films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tripathi, J., E-mail: jtripathi00@rediffmail.com; Bisen, R.; Choudhary, A.

2016-05-23

The observations of combination of Poly (vinyl) alcohol and Coumarin properties in nanocmposite films are reported. The X-ray diffraction measurements reveal nanocrystalline nature of PVA film, which remains nanocrystalline after doping Coumarin but along with PVA peaks, additional peak due to dopant crystallinity is seen. The absorption edge shows a double edge feature, where distinct bandgaps for PVA host and dopant Coumarin are obtained. However at a higher doping wt % of 1 and 2, the absorption is mainly dominated by Coumarin and single absorption edge is observed giving a bandgap equal to that of bulk Coumarin (3.3 eV). Themore » composite formation affects the bonding of host drastically and is seen through the bond modification in FTIR spectra. The results suggest that doping below 2 wt% is advantageous as combination of PVA and Coumarin properties are obtained but at 2 wt %, the properties are dominated by mainly Coumarin and the signature of PVA from optical properties is completely lost.« less

Low doping concentration studies of doped PVA-Coumarin nanocomposite films

NASA Astrophysics Data System (ADS)

Tripathi, J.; Tripathi, S.; Bisen, R.; Sharma, A.; Choudhary, A.; Shripathi, T.

2016-05-01

The observations of combination of Poly (vinyl) alcohol and Coumarin properties in nanocmposite films are reported. The X-ray diffraction measurements reveal nanocrystalline nature of PVA film, which remains nanocrystalline after doping Coumarin but along with PVA peaks, additional peak due to dopant crystallinity is seen. The absorption edge shows a double edge feature, where distinct bandgaps for PVA host and dopant Coumarin are obtained. However at a higher doping wt % of 1 and 2, the absorption is mainly dominated by Coumarin and single absorption edge is observed giving a bandgap equal to that of bulk Coumarin (3.3 eV). The composite formation affects the bonding of host drastically and is seen through the bond modification in FTIR spectra. The results suggest that doping below 2 wt% is advantageous as combination of PVA and Coumarin properties are obtained but at 2 wt %, the properties are dominated by mainly Coumarin and the signature of PVA from optical properties is completely lost.

A low insertion loss GaAs pHEMT switch utilizing dual n +-doping AlAs etching stop layers design

NASA Astrophysics Data System (ADS)

Chien, Feng-Tso; Lin, Da-Wei; Yang, Chih-Wei; Fu, Jeffrey S.; Chiu, Hsien-Chin

2010-03-01

A low insertion loss single-pole-single-throw (SPST) pseudomorphic high electron mobility transistor (pHEMT) switch utilizing the n +-type doping in AlAs etching stop layer was fabricated and investigated. This novel design reduces device sheet resistance resulting in an improvement of dc and rf power performance. In addition, the gate recess selectivity for GaAs/AlAs interface was not sacrificed after highly n +-type doping in AlAs etching stop layer. The pHEMT with n +-AlAs etching stop layer, also named Modified pHEMT (M-pHEMT), demonstrated a lower sheet resistance ( Rsh) of 65.9 Ω/γ, a higher maximum drain-to-source current ( Idmax) of 317.8 mA/mm and a higher peak transconductance ( gm) of 259.3 mS/mm which are superior to standard pHEMT performance with values of 71.9 Ω/γ, 290.3 mA/mm and 252.1 mS/mm, respectively. Due to a significant sheet resistance improvement from this novel epitaxial design, an SPST pHEMT switch was realized to manifest its industrial application potential. The results achieved an on-state insertion loss of 1.42 dB, an off-state isolation of 13.02 dB at 0.9 GHz, which were superior to traditional pHEMT switch under same condition of operation with values of 1.68 dB and 11.42 dB, respectively. It is proved that dual n +-doping AlAs etching stop layers scheme is beneficial for low loss microwave switches applications.

Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor

NASA Astrophysics Data System (ADS)

Jeschke, J.; Knauer, A.; Weyers, M.

2018-02-01

The unintentional silicon incorporation during the metalorganic vapor phase epitaxy (MOVPE) of nominally undoped Al0.7Ga0.3N in a Planetary Reactor under various growth conditions was investigated. Dependent on growth temperature, pressure and V/III ratio, Si concentrations of below 1 × 1016 up to 4 × 1017 cm-3 were measured. Potential Si sources are discussed and, by comparing samples grown in a SiC coated reactor setup and in a TaC coated setup, the SiC coatings in the reactor are identified as the most likely source for the unintentional Si doping at elevated temperatures above 1080 °C. Under identical growth conditions the background Si concentration can be reduced by up to an order of magnitude when using TaC coatings.

Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

NASA Astrophysics Data System (ADS)

Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

2018-04-01

The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

NASA Astrophysics Data System (ADS)

Zhang, Kexiong; Liang, Hongwei; Shen, Rensheng; Wang, Dongsheng; Tao, Pengcheng; Liu, Yang; Xia, Xiaochuan; Luo, Yingmin; Du, Guotong

2014-02-01

Negative differential resistance (NDR) behavior was observed in low Al-composition p-GaN/Mg-doped-Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate. The energy band and free carrier concentration of hetero-junction were studied by the model of the self-consistent solution of Schrödinger-Poisson equations combined with polarization engineering theory. At the forward bias of 0.95 V, the NDR effect has a high peak-to-valley current ratio of ˜9 with a peak current of 22.4 mA (˜current density of 11.4 A/cm2). An interesting phenomenon of NDR disappearance after consecutive scans and recurrence after electrical treatment was observed, which was associated with Poole-Frenkel effect.

Optical and structural properties of Al-doped ZnO thin films by sol gel process.

PubMed

Jun, Min-Chul; Koh, Jung-Hyuk

2013-05-01

Transparent conducting oxide (TCO) materials with high transmittance and good electrical conductivity have been attracted much attention due to the development of electronic display and devices such as organic light emitting diodes (OLEDs), and dye-sensitized solar cells (DSSCs). Aluminum doped zinc oxide thin films (AZO) have been well known for their use as TCO materials due to its stability, cost-effectiveness, good optical transmittance and electrical properties. Especially, AZO thin film, which have low resistivity of 2-4 x 10(-4) omega x cm which is similar to that of ITO films with wide band gap semiconductors. The AZO thin films were deposited on glass substrates by sol-gel spin-coating process. As a starting material, zinc acetate dihydrate (Zn(CH3COO)2 x 2H2O) and aluminum chloride hexahydrate (AlCl3 6H2O) were used. 2-methoxyethanol and monoethanolamine (MEA) were used as solvent and stabilizer, respectively. After deposited, the films were preheated at 300 degrees C on a hotplate and post-heated at 650 degrees C for 1.5 hrs in the furnace. We have studied the structural and optical properties as a function of Al concentration (0-2.5 mol.%).

Preparation, photoluminescent properties and luminescent dynamics of BaAlF{sub 5}:Eu{sup 2+} nanophosphors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei; College of Life Science, Dalian Nationalities University, Dalian, Liaoning 116600; Hua, Ruinian, E-mail: rnhua@dlnu.edu.cn

2014-12-15

Graphical abstract: Rice-shaped BaAlF{sub 5}:Eu{sup 2+} nanophosphors were synthesized via one-pot hydrothermal process. The as-prepared BaAlF{sub 5}:Eu{sup 2+} are composed of many particles with an average diameter of 40 nm. When excited at 260 nm, the sharp line emission located at 361 nm of Eu{sup 2+} was observed. The optimum doping concentration of Eu{sup 2+} was confirmed to be 5 mol%. The strong ultraviolet emission of Eu{sup 2+} ions in BaAlF{sub 5}:Eu{sup 2+} nanoparticles suggests that these nanoparticles may have potential applications for sensing, solid-state lasers and spectrometer calibration. - Highlights: • BaAlF{sub 5}:Eu{sup 2+} nanophosphors were synthesized via amore » mild hydrothermal process. • The Van and Huang models were used to research the mechanism of concentration quenching. • The optimum doping concentration of Eu2+ was confirmed to be 5 mol%. - Abstract: Eu{sup 2+}-doped BaAlF{sub 5} nanophosphors were synthesized via a facile one-pot hydrothermal method. The final products were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. XRD results showed that the prepared samples are single-phase. The FE-SEM and TEM images indicated that the prepared BaAlF{sub 5}:Eu{sup 2+} nanophosphors are composed of many rice-shaped particles with an average diameter of 40 nm. When excited at 260 nm, BaAlF{sub 5}:Eu{sup 2+} nanophosphors exhibit the sharp line emissions of Eu{sup 2+} at room temperature. The optimum doping concentration of Eu{sup 2+} was confirmed to be 5 mol%. The Van and Huang models were used to study the mechanism of concentration quenching and the electric dipole–dipole interaction between Eu{sup 2+} can be deduced to be a dominant for quenching fluorescence in BaAlF{sub 5}:Eu{sup 2+} nanophosphors. The strong ultraviolet emission of Eu{sup 2+} in BaAlF{sub 5}:Eu{sup 2+} nanophosphors suggests

Structural, optical, and LED characteristics of ZnO and Al doped ZnO thin films

NASA Astrophysics Data System (ADS)

Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

2017-05-01

ZnO (pristine) and Al doped ZnO (AZO) films were prepared using sol-gel spin coating method. The XRD analysis showed the enhanced compressive stress in AZO film. The presence of extended states below the conduction band edge in AZO accounts for the redshift in optical bandgap. The PL spectra of AZO showed significant blue emission due to the carrier recombination from defect states. The TRPL curves showed the dominant DAP recombination in ZnO film, whereas defect related recombination in Al doped ZnO film. Color parameters viz: the dominant wavelength, color coordinates (x,y), color purity, luminous efficiency and correlated color temperature (CCT) of ZnO and AZO films are calculated using 1931 (CIE) diagram. Further, a strong blue emission with color purity more than 96% is observed in both the films. The enhanced blue emission in AZO significantly increased the luminous efficiency (22.8%) compared to ZnO film (10.8%). The prepared films may be used as blue phosphors in white light generation.

Intrinsic ferromagnetism in nanocrystalline Mn-doped ZnO depending on Mn concentration.

PubMed

Subramanian, Munisamy; Tanemura, Masaki; Hihara, Takehiko; Soga, Tetsuo; Jimbo, Takashi

2011-04-01

The physical properties of Zn(1-x)Mn(x)O nanoparticles synthesized by thermal decomposition are extensively investigated by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Raman light scattering and Hysteresis measurements. XRD and XPS spectra reveal the absence of secondary phase in nanocrystalline ZnO doped with 5% or less Mn; and, later confirms that the valance state of Mn to be 2+ for all the samples. Raman spectra exhibit a peak at 660 cm(-1) which we attribute to the intrinsic lattice defects of ZnO with increasing Mn concentration. Overall, our results demonstrate that ferromagnetic properties can be realized while Mn-doped ZnO obtained in the nanocrystalline form.

Effects of anhydrous AlCl3 dopant on the structural, optical and electrical properties of PVA-PVP polymer composite films

NASA Astrophysics Data System (ADS)

Shanmugam, G.; Krishnakumar, V.

2018-05-01

Polymer composite films based on PVA-PVP with AlCl3 as the dopant at different concentrations were prepared using solution casting technique. XRD patterns reveal the increase in amorphousity of the films with AlCl3 doping. Optical absorption studies exhibit that the values of optical absorption coefficient, direct and indirect optical band gaps are found to decrease with increase in AlCl3 concentration. It confirms the charge transfer in complexes between the polymer and the dopant. The dielectric studies show the increase in dielectric constant at low frequency with increasing AlCl3 concentration and temperature. The ac conductivity and ionic conductivity increase with the AlCl3 content and the maximum value at room temperature is found to be 6.89 × 10-4 and 8.05 × 10-5 S/cm for higher AlCl3 doped PVA-PVP film. The estimated ionic conductivity value is three or four orders of magnitude greater than those obtained in the certain representative polymer-salt complexes as reported earlier. Electrical modulus plots confirm the removal of electrode polarization and the low conductivity relaxation time with Al doping. The activation energy estimated from the temperature dependent dc conductivity plot is agreed well with the migration energy calculated from the temperature dependent electric modulus plot.

Yb-doped large-mode-area laser fiber fabricated by halide-gas-phase-doping technique

NASA Astrophysics Data System (ADS)

Peng, Kun; Wang, Yuying; Ni, Li; Wang, Zhen; Gao, Cong; Zhan, Huan; Wang, Jianjun; Jing, Feng; Lin, Aoxiang

2015-06-01

In this manuscript, we designed a rare-earth-halide gas-phase-doping setup to fabricate a large-mode-area fiber for high power laser applications. YbCl3 and AlCl3 halides are evaporated, carried respectively and finally mixed with usual host gas material SiCl4 at the hot zone of MCVD system. Owing to the all-gas-phasing reaction process and environment, the home-made Yb-doped fiber preform has a homogeneous large core and modulated refractive index profile to keep high beam quality. The drawn fiber core has a small numerical aperture of 0.07 and high Yb concentration of 9500 ppm. By using a master oscillator power amplifier system, nearly kW-level (951 W) laser output power was obtained with a slope efficiency of 83.3% at 1063.8 nm, indicating the competition and potential of the halide-gas-phase-doping technique for high power laser fiber fabrication.

Thermoelectric Properties of Al-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.

2014-06-01

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures ( T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K-2 at 600 K, surpassing the best AZO film previously reported in the literature.

Optimizing the Dopant and Carrier Concentration of Ca5Al2Sb6 for High Thermoelectric Efficiency

PubMed Central

Yan, Yuli; Zhang, Guangbiao; Wang, Chao; Peng, Chengxiao; Zhang, Peihong; Wang, Yuanxu; Ren, Wei

2016-01-01

The effects of doping on the transport properties of Ca5Al2Sb6 are investigated using first-principles electronic structure methods and Boltzmann transport theory. The calculated results show that a maximum ZT value of 1.45 is achieved with an optimum carrier concentration at 1000 K. However, experimental studies have shown that the maximum ZT value is no more than 1 at 1000 K. By comparing the calculated Seebeck coefficient with experimental values, we find that the low dopant solubility in this material is not conductive to achieve the optimum carrier concentration, leading a smaller experimental value of the maximum ZT. Interestingly, the calculated dopant formation energies suggest that optimum carrier concentrations can be achieved when the dopants and Sb atoms have similar electronic configurations. Therefore, it might be possible to achieve a maximum ZT value of 1.45 at 1000 K with suitable dopants. These results provide a valuable theoretical guidance for the synthesis of high-performance bulk thermoelectric materials through dopants optimization. PMID:27406178

High-Temperature Thermometer Using Cr-Doped GdAlO3 Broadband Luminescence

NASA Technical Reports Server (NTRS)

Eldridge, Jeffrey; Chambers, Matthew

2011-01-01

A new concept has been developed for a high-temperature luminescence-based optical thermometer that both shows the desired temperature sensitivity in the upper temperature range of present state-of-the-art luminescence thermometers (above 1,300 C), while maintaining substantial stronger luminescence signal intensity that will allow these optical thermometers to operate in the presence of the high thermal background radiation typical of industrial applications. This objective is attained by using a Cr-doped GdAlO3 (Cr:GdAlO3) sensor with an orthorhombic perovskite structure, resulting in broadband luminescence that remains strong at high temperature due to the favorable electron energy level spacing of Cr:GdAlO3. The Cr:GdAlO3 temperature (and pressure) sensor can be incorporated into, or applied onto, a component s surface when a non-contact surface temperature measurement is desired, or alternatively, the temperature sensor can be attached to the end of a fiber-optic probe that can then be positioned at the location where the temperature measurement is desired. In the case of the fiber-optic probe, both the pulsed excitation and the luminescence emission travel through the fiber-optic light guide. In either case, a pulsed light source provides excitation of the luminescence, and the broadband luminescence emission is collected. Real-time temperature measurements are obtain ed using a least-squares fitting algorithm that determines the luminescence decay time, which has a known temperature dependence established by calibration. Due to the broad absorption and emission bands for Cr:GdAlO3, there is considerable flexibility in the choice of excitation wavelength and emission wavelength detection bands. The strategic choice of the GdAlO3 host is based on its high crystal field, phase stability, and distorted symmetry at the Cr3+ occupation sites. The use of the broadband emission for temperature sensing at high temperatures is a key feature of the invention and is

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating

PubMed Central

Sakuraba, Masao; Sugawara, Katsutoshi; Nosaka, Takayuki; Akima, Hisanao; Sato, Shigeo

2017-01-01

Abstract The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. After fabrication of Hall-effect devices with the B AL-doped Si films on unstrained and 0.8%-tensile-strained Si(100)-on-insulator substrates (maximum process temperature 350°C), carrier properties were electrically measured at room temperature. Typically for the initial B amount of 2 × 1014 cm−2 and 7 × 1014 cm−2, B concentration depth profiles showed a clear decay slope as steep as 1.3 nm/decade. Dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 1013 cm−2 and 2 × 1013 cm−2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10–13 cm2 V−1 s−1. Moreover, mobility degradation was not observed even when sheet carrier density was increased by heat treatment at 500–700 °C. There is a possibility that the local carrier (ionized B atom) concentration around the B AL in Si reaches around 1021 cm−3 and 2-D impurity-band formation with strong Coulomb interaction is expected. The behavior of carrier properties for heat treatment at 500–700 °C implies that thermal diffusion causes broadening of the B AL in Si and decrease of local B concentration. PMID:28567175

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating

NASA Astrophysics Data System (ADS)

Sakuraba, Masao; Sugawara, Katsutoshi; Nosaka, Takayuki; Akima, Hisanao; Sato, Shigeo

2017-12-01

The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. After fabrication of Hall-effect devices with the B AL-doped Si films on unstrained and 0.8%-tensile-strained Si(100)-on-insulator substrates (maximum process temperature 350°C), carrier properties were electrically measured at room temperature. Typically for the initial B amount of 2 × 1014 cm-2 and 7 × 1014 cm-2, B concentration depth profiles showed a clear decay slope as steep as 1.3 nm/decade. Dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 1013 cm-2 and 2 × 1013 cm-2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10-13 cm2 V-1 s-1. Moreover, mobility degradation was not observed even when sheet carrier density was increased by heat treatment at 500-700 °C. There is a possibility that the local carrier (ionized B atom) concentration around the B AL in Si reaches around 1021 cm-3 and 2-D impurity-band formation with strong Coulomb interaction is expected. The behavior of carrier properties for heat treatment at 500-700 °C implies that thermal diffusion causes broadening of the B AL in Si and decrease of local B concentration.

Integrated study of first principles calculations and experimental measurements for Li-ionic conductivity in Al-doped solid-state LiGe2(PO4)3 electrolyte

NASA Astrophysics Data System (ADS)

Kang, Joonhee; Chung, Habin; Doh, Chilhoon; Kang, Byoungwoo; Han, Byungchan

2015-10-01

Understanding of the fundamental mechanisms causing significant enhancement of Li-ionic conductivity by Al3+ doping to a solid LiGe2(PO4)3 (LGP) electrolyte is pursued using first principles density functional theory (DFT) calculations combined with experimental measurements. Our results indicate that partial substitution Al3+ for Ge4+ in LiGe2(PO4)3 (LGP) with aliovalent (Li1+xAlxGe2-x(PO4)3, LAGP) improves the Li-ionic conductivity about four-orders of the magnitude. To unveil the atomic origin we calculate plausible diffusion paths of Li in LGP and LAGP materials using DFT calculations and a nudged elastic band method, and discover that LAGP had additional transport paths for Li with activation barriers as low as only 34% of the LGP. Notably, these new atomic channels manifest subtle electrostatic environments facilitating cooperative motions of at least two Li atoms. Ab-initio molecular dynamics predict Li-ionic conductivity for the LAGP system, which is amazingly agreed experimental measurement on in-house made samples. Consequently, we suggest that the excess amounts of Li caused by the aliovalent Al3+ doping to LGP lead to not only enhancing Li concentration but also opening new conducting paths with substantially decreases activation energies and thus high ionic conductivity of LAGP solid-state electrolyte.

Direct Observation of Lattice Aluminum Environments in Li Ion Cathodes LiNi1-y-zCoyAlzO2 and Al-Doped LiNixMnyCozO2 via (27)Al MAS NMR Spectroscopy.

PubMed

Dogan, Fulya; Vaughey, John T; Iddir, Hakim; Key, Baris

2016-07-06

Direct observations of local lattice aluminum environments have been a major challenge for aluminum-bearing Li ion battery materials, such as LiNi1-y-zCoyAlzO2 (NCA) and aluminum-doped LiNixMnyCozO2 (NMC). (27)Al magic angle spinning (MAS) nuclear magnetic resonance (NMR) spectroscopy is the only structural probe currently available that can qualitatively and quantitatively characterize lattice and nonlattice (i.e., surface, coatings, segregation, secondary phase etc.) aluminum coordination and provide information that helps discern its effect in the lattice. In the present study, we use NMR to gain new insights into transition metal (TM)-O-Al coordination and evolution of lattice aluminum sites upon cycling. With the aid of first-principles DFT calculations, we show direct evidence of lattice Al sites, nonpreferential Ni/Co-O-Al ordering in NCA, and the lack of bulk lattice aluminum in aluminum-"doped" NMC. Aluminum coordination of the paramagnetic (lattice) and diamagnetic (nonlattice) nature is investigated for Al-doped NMC and NCA. For the latter, the evolution of the lattice site(s) upon cycling is also studied. A clear reordering of lattice aluminum environments due to nickel migration is observed in NCA upon extended cycling.

Ultra High p-doping Material Research for GaN Based Light Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vladimir Dmitriev

2007-06-30

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading inmore » light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences

Correlation of martensitic transformation temperatures of Ni- Mn-Ga/Al-X alloys to non-bonding electron concentration

NASA Astrophysics Data System (ADS)

Ramudu, M.; Satish Kumar, A.; Seshubai, V.; Rajasekharan, T.

2015-02-01

The martensitic transformation TM of the alloys of Ni-Mn-Ga and Ni-Mn-Al show a general trend of increase with electron per atom ratio (e/a) calculated from the total number of electrons outside the rare gas shell of the atoms. However prediction of TM fails among iron substituted Ni-Mn-Ga alloys and those with In doped for Ga, due to the absence of a useful trend. A scheme of computing modified electron concentration is presented considering only the non-bonding electrons per atom Ne/a of the compounds, based on Pauling's ideas on the electronic structure of metallic elements. Systematic variation of TM with Ne/a is reproduced for a large number of alloys of Ni-Mn-Ga and the anomaly observed for Fe containing alloys with e/a disappears. The non-bonding electron concentration is thus demonstrated to be effective in predicting TM of shape memory alloys of Ni-Mn-Ga-X system including the isoelectronic compounds of Ni-Mn-Ga-In.

2-μm optical time domain reflectometry measurements from novel Al-, Ge-, CaAlSi- doped and standard single-mode fibers

NASA Astrophysics Data System (ADS)

Rodriguez-Novelo, J. C.; Sanchez-Nieves, J. A.; Sierra-Calderon, A.; Sanchez-Lara, R.; Alvarez-Chavez, J. A.

2017-08-01

The development of novel Al-, Ge- doped and un-doped standard single mode fibers for future optical communication at 2μm requires the integration of, among other pieces of equipment, an optical time domain reflectometry (OTDR) technique for precise spectral attenuation characterization, including the well-known cut-back method. The integration of a state of the art OTDR at 2μm could provide valuable attenuation information from the aforementioned novel fibers. The proposed setup consists of a 1.7 mW, 1960nm pump source, a 30 dB gain Thulium doped fibre amplifier at 2μm, an 0.8mm focal length lens with a 0.5 NA, a 30 MHz acusto-optic modulator, a 3.1 focal length lens with a 0.68NA, an optical circulator at 2μm, an InGaAs photodetector for 1.2 nm-2.6 nm range, a voltage amplifier and an oscilloscope. The propagated pulse rate is 50 KHz, with 500 ns, 200 ns, 100 ns and 50 ns pulse widths. Attenuation versus novel fibers types for lengths ranging from 400- to 1000- meter samples were obtained using the proposed setup.

Anatase phase stability and doping concentration dependent refractivity in codoped transparent conducting TiO2 films

NASA Astrophysics Data System (ADS)

Chen, T. L.; Furubayashi, Y.; Hirose, Y.; Hitosugi, T.; Shimada, T.; Hasegawa, T.

2007-10-01

Nb0.06SnxTi0.94-xO2 (x <= 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of λ = 500 nm is estimated to be 12.4% for Nb0.06Sn0.3 Ti0.64O2 thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO2. Low resistivity on the order of 10-4 Ω cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb0.06Snx Ti0.94-xO2 thin films (x <= 0.2). Optical and transport analyses demonstrate that doping Sn into Nb0.06 Ti0.94O2 can reduce the refractivity while maintaining low resistivity and high transparency.

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, P.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2016-03-15

In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al{sub 0.2}Ga{sub 0.8}N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of amore » LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.« less

Cathodoluminescence emission of REE (Dy, Pr and Eu) doped LaAlO3 phosphors

NASA Astrophysics Data System (ADS)

Boronat, C.; Rivera, T.; Garcia-Guinea, J.; Correcher, V.

2017-01-01

Luminescence emission from rare earth (REE) ions doped materials are being of interest since can be employed as scintillators, catalysts, battery and magnetic materials, etc. We herein report on the preliminary results obtained from the cathodoluminescence (CL) properties of undoped LaAlO3 (LAO) and LaAlO3: REE3+ (REE=Dy3+, Pr3+ and Eu3+) samples synthesized by a sol-gel process based on the Pechini's method with a spray-drying technique. The samples, previously characterized by means of Environmental Scanning Electron Microscopy and Energy Dispersive X-Ray Analysis Spectrometry, display CL spectra with well-defined peaks that could specifically be associated with the LAO structure (in the range of 300-450 nm) and point defects (from 450 to 800 nm) spectral regions. The observed wavebands are as follows: (i) 480 and 570 from the Dy-doped LAO correspond respectively to 4F9/2→6H15/2 and 4F9/2→6H13/2 transitions, (ii) 490-638 from the Pr-doped LAO is linked to 3P0→3H4, 1D2→3H4 transitions and (iii) 590 and 620 where the dopant Eu3+ gives rise to 5D0→7F1 and 5D0→7F2 transitions and (iv) a UV-blue broad band is associated with NBHOC in undoped LAO. Such emissions are due to the presence of the 4f electrons of rare earth ions that are shielded by the outer 5s and 5p electrons, the intra-4f emission spectra of REE that induce sharp and narrow wavebands.

Doping-Induced Type-II to Type-I Transition and Interband Optical Gain in InAs/AlSb Quantum Wells

NASA Technical Reports Server (NTRS)

Kolokolov, K. I.; Ning, C. Z.

2003-01-01

We show that proper doping of the barrier regions can convert the well-known type-II InAs/AlSb QWs to type I, producing strong interband transitions comparable to regular type-I QWs. The interband gain for TM mode is as high as 4000 l/cm, thus providing an important alternative material system in the mid-infrared wavelength range. We also study the TE and TM gain as functions of doping level and intrinsic electron-hole density.

A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al x Ga1- x As quantum well structures

NASA Astrophysics Data System (ADS)

Donmez, Omer; Nutku, Ferhat; Erol, Ayse; Arikan, Cetin M.; Ergun, Yuksel

2012-11-01

In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped Al x Ga1- x As barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the doping profile and the doping concentration of the QWs. PR spectra were taken at room temperature using a He-Ne laser as a modulation source and a broadband tungsten halogen lamp as a probe light. The PR spectra were analyzed using Aspnes' third derivative functional form. Since the barriers are staircase-like, the structure has different ground state energies; therefore, several optical transitions take place in the spectrum which cannot be resolved in a conventional photoluminescence technique at room temperature. To analyze the experimental results, all energy levels in the conduction and in the valance band were calculated using transfer matrix technique, taking into account the effective mass and the parabolic band approximations. A comparison of the PR results with the calculated optical transition energies showed an excellent agreement. Several optical transition energies of the QWIP structures were resolved from PR measurements. It is concluded that PR spectroscopy is a very useful experimental tool to characterize complicated structures with a high accuracy at room temperature.

Modulation Doped GaAs/Al sub xGA sub (1-x)As Layered Structures with Applications to Field Effect Transistors.

DTIC Science & Technology

1982-02-15

function of the doping density at 300 and 77 K for the classical Boltzmann statistics or depletion approximation (solid line) and for the approximate...Fermi-Dirac statistics (equation (19) dotted line)• This comparison demonstrates that the deviation from Boltzmann statistics is quite noticeable...tunneling Schottky barriers cannot be obtained at these doping levels. The dotted lines are obtained when Boltzmann statistics are used in the Al Ga

In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells

NASA Astrophysics Data System (ADS)

Ghezzi, C.; Cioce, B.; Magnanini, R.; Parisini, A.

2001-11-01

Results are reported regarding in-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells. In the samples, which were grown by molecular beam epitaxy, only the central regions of the Al0.40Ga0.60Sb barriers were Te doped. Low-field, low-temperature Hall measurements in the dark demonstrated the presence in the GaSb wells of a degenerate electron gas with nonzero occupancy only for the lowest miniband. A positive persistent photoconductivity effect, related to the DX character of the Te impurity, was also observed. This behavior enabled the μ electron mobility to be measured at T=10 K as a function of the nS sheet carrier density. Since the experimental data were consistent with a dominant role of the interface roughness scattering in the limiting of μ, the height, Δ, and the lateral size, Λ, of the interface roughness were determined from the analysis of the μ=μ(nS) dependence. Acceptable values of Δ were obtained, consistent with results of structural investigations in single quantum well samples of GaSb/Al0.40Ga0.60Sb [E. Kh. Mukhamedzhanov, C. Bocchi, S. Franchi, A. Baraldi, R. Magnanini, and L. Nasi, J. Appl. Phys. 87, 4234 (2000)].

Light emission of heavily doped AlGaN structures under optical pumping

NASA Astrophysics Data System (ADS)

Bokhan, P. A.; Fateev, N. V.; Osinnykh, I. V.; Malin, T. V.; Zakrevsky, Dm. E.; Zhuravlev, K. S.; Wei, Xin; Li, Jian; Chen, Lianghui

2018-04-01

Spectral, temporal and polarization characteristics of spontaneous and stimulated luminescence of Al0.5Ga0.5N/AlN structures grown by molecular beam epitaxy were studied at the optical pulsed pumping with λ = 266 nm. Samples with a high degree of silicon doping were investigated. The vast majority of radiation falls on transitions within the band gap between the levels of defects. As a result, the radiation band embracing the whole visible range of more than 300 THz is observed in both spontaneous radiation and induced luminescence. In spontaneous radiation the band has a smooth spectral intensity distribution over the wavelengths, whereas induced radiation has its sharp peaks corresponding to the mode structure of the planar waveguide. The measured gain of the active medium is g ≈ 70 cm‑1 for a weak signal.

A first-principles study of the preventive effects of Al and Mg doping on the degradation in LiNi0.8Co0.1Mn0.1O2 cathode materials.

PubMed

Min, Kyoungmin; Seo, Seung-Woo; Song, You Young; Lee, Hyo Sug; Cho, Eunseog

2017-01-18

First-principles calculations have been used to investigate the effects of Al and Mg doping on the prevention of degradation phenomena in Li(Ni 0.8 Co 0.1 Mn 0.1 )O 2 cathode materials. Specifically, we have examined the effects of dopants on the suppression of oxygen evolution and cation disordering, as well as their correlation. It is found that Al doping can suppress the formation of oxygen vacancies effectively, while Mg doping prevents the cation disordering behaviors, i.e., excess Ni and Li/Ni exchange, and Ni migration. This study also demonstrates that formation of oxygen vacancies can facilitate the construction of the cation disordering, and vice versa. Delithiation can increase the probabilities of formation of all defect types, especially oxygen vacancies. When oxygen vacancies are present, Ni can migrate to the Li site during delithiation. However, Al and Mg doping can inhibit Ni migration, even in structures with preformed oxygen defects. The analysis of atomic charge variations during delithiation demonstrates that the degree of oxidation behavior in oxygen atoms is alleviated in the case of Al doping, indicating the enhanced oxygen stability in this structure. In addition, changes in the lattice parameters during delithiation are suppressed in the Mg-doped structure, which suggests that Mg doping may improve the lattice stability.

Effect of AlCl3 concentration on nanoparticle removal by coagulation.

PubMed

Zhang, Lizhu; Mao, Jingchun; Zhao, Qing; He, Shaobo; Ma, Jun

2015-12-01

In recent years, engineered nanoparticles, as a new group of contaminants emerging in natural water, have been given more attention. In order to understand the behavior of nanoparticles in the conventional water treatment process, three kinds of nanoparticle suspensions, namely multi-walled carbon nanotube-humic acid (MWCNT-HA), multi-walled carbon nanotube-N,N-dimethylformamide (MWCNT-DMF) and nanoTiO2-humic acid (TiO2-HA) were employed to investigate their coagulation removal efficiencies with varying aluminum chloride (AlCl3) concentrations. Results showed that nanoparticle removal rate curves had a reverse "U" shape with increasing concentration of aluminum ion (Al(3+)). More than 90% of nanoparticles could be effectively removed by an appropriate Al(3+) concentration. At higher Al(3+) concentration, nanoparticles would be restabilized. The hydrodynamic particle size of nanoparticles was found to be the crucial factor influencing the effective concentration range (ECR) of Al(3+) for nanoparticle removal. The ECR of Al(3+) followed the order MWCNT-DMF>MWCNT-HA>TiO2-HA, which is the reverse of the nanoparticle size trend. At a given concentration, smaller nanoparticles carry more surface charges, and thus consume more coagulants for neutralization. Therefore, over-saturation occurred at relatively higher Al(3+) concentration and a wider ECR was obtained. The ECR became broader with increasing pH because of the smaller hydrodynamic particle size of nanoparticles at higher pH values. A high ionic strength of NaCl can also widen the ECR due to its strong potential to compress the electric double layer. It was concluded that it is important to adjust the dose of Al(3+) in the ECR for nanoparticle removal in water treatment. Copyright © 2015. Published by Elsevier B.V.

Li+, Na+ and K+ co-doping effects on scintillation properties of Ce:Gd3Ga3Al2O12 single crystals

NASA Astrophysics Data System (ADS)

Yoshino, Masao; Kamada, Kei; Kochurikhin, Vladimir V.; Ivanov, Mikhail; Nikl, Martin; Okumura, Satoshi; Yamamoto, Seiichi; Yeom, Jung Yeol; Shoji, Yasuhiro; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

2018-06-01

Ce0.5%: Ce:Gd3Ga3Al2O12(GGAG) single crystals co-doped with 500at.ppm Li+, Na+ and K+ were grown by using the micro-pulling down method. The smooth Ce4+ charge transfer absorption below 350 nm and decay time acceleration were observed in Li co-doped sample. Na+ and K+ co-doping did not show a large effect on the acceleration of decay time compared with Li co-doping. Ce0.5%:GGAG single crystals co-doped with 500 at.ppm Li+ were also grown by the Czochralski method. Optical, scintillation properties and timing performance were evaluated to investigate the effect of univalent alkali metal ions co-doping on Ce:GGAG scintillators. The scintillation decay curves were accelerated by Li co-doping: the decay time was significantly accelerated to 54.8 ns (47%) for the faster component and 158 ns (53%) for the slower component. The light output was 94% of the non co-doped Ce:GGAG standard. The coincidence time resolution was improved to 258 ps by Li co-doping.

Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance

NASA Astrophysics Data System (ADS)

Globisch, B.; Dietz, R. J. B.; Nellen, S.; Göbel, T.; Schell, M.

2016-12-01

The influence of post-growth annealing on the electrical properties, the transient carrier dynamics and the performance as THz photoconductive receiver of Beryllium (Be) doped InGaAs/InAlAs multilayer heterostructures grown at 130 °C in a molecular beam epitaxy (MBE) system was investigated. We studied samples with nominally Be doping concentrations of 8 ×10 17 cm-3 - 1.2 ×1019 cm3 annealed for 15 min. - 120 min. at temperatures between 500 °C - 600 °C. In contrast to previous publications, the results show consistently that annealing increases the electron lifetime of the material. In analogy to the annealing properties of low-temperature grown (LTG) GaAs we explain our findings by the precipitation of arsenic antisite defects. The knowledge of the influence of annealing on the material properties allowed for the fabrication of broadband THz photoconductive receivers with an electron lifetime below 300 fs and varying electrical properties. We found that the noise of the detected THz pulse trace in time-domain spectroscopy (TDS) was directly determined by the resistance of the photoconductive receiver and the peak-to-peak amplitude of the THz pulse correlated with the electron mobility.

Effect of variation in indium concentration on the photosensitivity of chlorine doped In{sub 2}S{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherian, Angel Susan; Kartha, C. Sudha; Vijayakumar, K. P.

2014-01-28

Consequence of variation in Indium concentration in chlorine doped In2S{sub 3} thin films deposited by spray pyrolysis technique was studied. Chlorine was incorporated in the spray solution, using HCl and Indium concentration was varied by adjusting In/S ratio Interestingly, the photo response of all chlorine doped samples augmented compared to pristine samples; but the highest photosensitivity value of ∼2300 was obtained only when 36ml 0.5M HCl was added to the solution of In{sub 2}S{sub 3} having In/S=2/8. It was also observed that samples with high photosensitivity possess higher band gap and variation in sub band gap absoption levels were observedmore » with increase in Indium concentration. The present study proved that concentration of Indium plays an important role in controlling the crystallinity and photosensitivity of chlorine doped samples.« less

Performance of a High-Concentration Erbium-Doped Fiber Amplifier with 100 nm Amplification Bandwidth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hajireza, P.; Shahabuddin, N. S.; Abbasi-Zargaleh, S.

2010-07-07

Increasing demand for higher bandwidth has driven the need for higher Wavelength Division Multiplexing (WDM) channels. One of the requirements to achieve this is a broadband amplifier. This paper reports the performance of a broadband, compact, high-concentration and silica-based erbium-doped fiber amplifier. The amplifier optimized to a 2.15 m long erbium-doped fiber with erbium ion concentration of 2000 ppm. The gain spectrum of the amplifier has a measured amplification bandwidth of 100 nm using a 980 nm laser diode with power of 150 mW. This silica-based EDFA shows lower noise figure, higher gain and wider bandwidth in shorter wavelengths comparedmore » to Bismuth-based EDFA with higher erbium ion concentration of 3250 ppm at equivalent EDF length. The silica-based EDF shows peak gain at 22 dB and amplification bandwidth between 1520 nm and 1620 nm. The lowest noise figure is 5 dB. The gain is further improved with the implementation of enhanced EDFA configurations.« less

Concentration quenching of Eu{sup 2+} doped Ca{sub 2}BO{sub 3}Cl

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seed Ahmed, H.A.A.; Department of Physics, University of Khartoum, Khartoum; Swart, H.C.

2016-03-15

Highlights: • Ca{sub 2}BO{sub 3}Cl doped with Eu{sup 2+} prepared by solid state reaction. • Concentration quenching studied by intensity and lifetime measurements. • Accurate determination of the critical transfer distance. • Interaction mechanism verified to be dipole–dipole interactions. - Abstract: With the aim of determining the concentration quenching mechanism of Eu{sup 2+} doped Ca{sub 2}BO{sub 3}Cl, a series of phosphors with a varied Eu{sup 2+} concentration (Ca{sub 2−x}BO{sub 3}Cl:xEu{sup 2+}) was synthesized by the solid state reaction method. The phase structure was determined by X-ray diffraction. Photoluminescence (PL) measurements showed broad excitation and emission signatures of the allowed f–dmore » transition of Eu{sup 2+} ions. The PL emission intensity was found to be increased by increasing the concentration of Eu{sup 2+} ions up to x = 0.03 and then decreased as a result of the concentration quenching effect. The lifetime of the emission from the Eu{sup 2+} ions was measured and the decrease in the lifetime with increasing Eu{sup 2+} concentration confirmed that non-radiative energy transfer occurred between Eu{sup 2+} ions. From the luminescence data, the value of the critical transfer distance was calculated as 1.5 nm and the corresponding concentration quenching mechanism was verified to be a dipole–dipole interaction.« less

2 inch size Czochralski growth and scintillation properties of Li+ co-doped Ce:Gd3Ga3Al2O12

NASA Astrophysics Data System (ADS)

Kamada, Kei; Shoji, Yasuhiro; Kochurikhin, Vladimir V.; Yoshino, Masao; Okumura, Satoshi; Yamamoto, Seiichi; Yeom, Jung Yeol; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Nikl, Martin; Yoshino, Masao; Yoshikawa, Akira

2017-03-01

The 2 inch size Li 0.15 and 1.35 mol% co-doped Ce:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Li co-doping. Ce4+ CT absorption below 350 nm is clearly enhanced by Li co-doping as same as divalent ions co-doping. By 1.35 at.% Li co-doping, light yield was decrease to 88% of the Ce: GAGG standard and decay time was accelerated to 34.3ns 21.0%, 84.6ns 68.7%, 480ns 10.3%. The timing resolution measurement for a pair of 3 × 3 × 3mm3 size Li,Ce:GAGG scintillator crystals was performed using Si-PMs and the timing resolution of the 1.35 at.% Li co-doped Ce:GAGG was 218ps.

Synthesis of nano-TiO2 photocatalysts with tunable Fe doping concentration from Ti-bearing tailings

NASA Astrophysics Data System (ADS)

Sui, Yulei; Liu, Qingxia; Jiang, Tao; Guo, Yufeng

2018-01-01

In this work, highly pure nano-TiO2 photocatalysts with varying Fe doping concentration were successfully synthesized from low-cost Ti-bearing tailings by an acidolysis-hydrothermal route. The effects of H2SO4 concentration, leaching temperature, acid/tailings ratio and leaching time on the recovery of TiO2 from the tailings were investigated. Synthesized samples were characterized by XRD, TEM, EDS, XPS, and UV-vis spectroscopy. The results showed that the material prepared is characteristic anatase with the average size of 20 nm and the Fe doping concentration in the synthesized nano-TiO2 is tunable. The photocatalytic activity of synthesized nano-TiO2 photocatalyst was also evaluated by the photodegradation of Rhodamine B under visible light and UV light irradiation. Our study demonstrates a low-cost approach to synthesize highly efficient and visible light responsive catalysts.

La-doped Al2O3 supported Au nanoparticles: highly active and selective catalysts for PROX under PEMFC operation conditions.

PubMed

Lin, Qingquan; Qiao, Botao; Huang, Yanqiang; Li, Lin; Lin, Jian; Liu, Xiao Yan; Wang, Aiqin; Li, Wen-Cui; Zhang, Tao

2014-03-14

La-doped γ-Al2O3 supported Au catalysts show high activity and selectivity for the PROX reaction under PEMFC operation conditions. The superior performance is attributed to the formation of LaAlO3, which suppresses H2 oxidation and strengthens CO adsorption on Au sites, thereby improving competitive oxidation of CO at elevated temperature.

Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

NASA Astrophysics Data System (ADS)

Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

2017-10-01

Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

NASA Astrophysics Data System (ADS)

Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

2018-02-01

Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

A density functional theory investigation on amantadine drug interaction with pristine and B, Al, Si, Ga, Ge doped C60 fullerenes

NASA Astrophysics Data System (ADS)

Parlak, Cemal; Alver, Özgür

2017-06-01

Amantadine is a well-known drug for its treatment effect on Parkinson's disease and influenza infection or hepatitis. Heteroatom doped fullerenes have been extensively examined for their possible usage in sensor technology and medical applications as drug delivery vehicles. In this research, pristine and B, Al, Si, Ga, Ge doped C60 fullerenes and their interaction with amantadine drug molecule were investigated based on the density functional theory calculations. Findings suggest that doped C60 fullerenes might be used to detect the presence of amantadine and they might be used as drug delivery vehicles because of their moderately high adsorption energies with amantadine.

Influence of low concentration V and Co oxide doping on the dissolution behaviors of simplified nuclear waste glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Xiaonan; Neeway, James J.; Ryan, Joseph V.

Transition metal oxides are commonly present in nuclear waste and they can alter the structure, property and especially dissolution behaviors of the glasses used for waste immobilization. In this paper, we investigated vanadium and cobalt oxide induced structural and properties changes, especially dissolution behaviors, of International Simple Glass (ISG), a model nuclear waste glass system. Static chemical durability tests were performed at 90 °C with a pH value of 7 and a surface-area-to-solution-volume of 200 m-1 for 112 days on three glasses: ISG, ISG doped with 0.5 mol% Co2O3, and ISG doped with 2.0 mol% V2O5. ICP-MS was used tomore » analyze the dissolved ion concentrations. It was found that doping with vanadium and cobalt oxide, even at the low doping concentration, significantly reduced the extent of the ISG glass dissolution. Differential Scanning Calorimetry (DSC) analysis showed that vanadium oxide doping reduced the glass transition temperature (Tg) while cobalt oxide did not significantly change the Tg of ISG. X-ray diffraction (XRD), Raman spectrometry and scanning electron microscopy (SEM) were used to analyze the glass samples before and after corrosion to understand the phase and microstructure changes.« less

Determination of nonlinear optical properties by time resolved Z-scan in Nd-doped phosphate glass

NASA Astrophysics Data System (ADS)

de Souza, J. M.; de Lima, W. J.; Pilla, V.; Andrade, A. A.; Dantas, N. O.; Messias, D. N.

2017-02-01

In this work, we have used a Ti3+:Safira laser tuned at 803nm to performed time-resolved measurements using the Z-scan technique to characterize the nonlinear optical properties of phosphate glasses. The glass matrices, labeled PAN (P2O5-Al2O3-Na2CO3) and PANK (P2O5-Al2O3- Na2O-K2O), were doped with increasing Nd3+ concentration, ranging from 0.5 to 5 wt%. For both systems, we have seen that the optical nonlinearity has a linear dependence with the doping ion concentration. Therefore, we propose a new approach to obtain the parameters Δα and Δσ. All results obtained are in good agreement with others found in the literature.

The optoelectronic properties and role of Cu concentration on the structural and electrical properties of Cu doped ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Omri, K.; Bettaibi, A.; Khirouni, K.; El Mir, L.

2018-05-01

In the current study, we synthesized a Cu-doped ZnO (CZO) nanoparticles material using a sol-gel method with different doping concentrations of Cu (0, 2, 3 and 4 at.%). The control of the Cu concentration on structural, electrical and optical properties of CZO nanoparticles was investigated in detail. The XRD analysis of the CZO nanoparticles reveals the formation of ZnO hexagonal wurtzite structure for all samples which confirm the incorporation of Cu2+ ions into the ZnO lattice by substitution. Furthermore, CZO nanoparticles showed a small red shift of absorption band with the incorporation of Cu from 0 to 4 at.%; i.e. a decreased band gap value from 3.34 eV to 3.27 eV with increasing of Cu doping content. The frequency dispersion of the electric conductivity were studied using the Jonscher universal power law, according to relation σ(ω) = σDC + A ωs(T). Alternative current conductivity increases with increasing Cu content in spite of the decrease the activation energy with copper loading. It was found that the conductivity reached its maximum value for critical Cu concentration of 3 at.%. The frequency relaxation phenomenon was also investigated and all results were discussed in term of the copper doping concentration.

Towards atomic scale engineering of rare-earth-doped SiAlON ceramics through aberration-corrected scanning transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yurdakul, Hilmi; Idrobo Tapia, Juan C; Pennycook, Stephen J

2011-01-01

Direct visualization of rare earths in {alpha}- and {beta}-SiAlON unit-cells is performed through Z-contrast imaging technique in an aberration-corrected scanning transmission electron microscope. The preferential occupation of Yb and Ce atoms in different interstitial locations of {beta}-SiAlON lattice is demonstrated, yielding higher solubility for Yb than Ce. The triangular-like host sites in {alpha}-SiAlON unit cell accommodate more Ce atoms than hexagonal sites in {beta}-SiAlON. We think that our results will be applicable as guidelines for many kinds of rare-earth-doped materials.

Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotani, Teruhisa, E-mail: tkotani@iis.u-tokyo.ac.jp; Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505; Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567

2015-09-14

Blue shift and broadening of the absorption spectra of mid-infrared intersubband transition in non-polar m-plane AlGaN/GaN 10 quantum wells were observed with increasing doping density. As the doping density was increased from 6.6 × 10{sup 11} to 6.0 × 10{sup 12 }cm{sup −2} per a quantum well, the intersubband absorption peak energy shifted from 274.0 meV to 302.9 meV, and the full width at half maximum increased from 56.4 meV to 112.4 meV. Theoretical calculations reveal that the blue shift is due to many body effects, and the intersubband linewidth in doped AlGaN/GaN QW is mainly determined by scattering due to interface roughness, LO phonons, and ionized impurities.

Crystal Growth and Luminescence Properties of Yb-doped Gd3Al2Ga3O12 Infra-red Scintillator

NASA Astrophysics Data System (ADS)

Suzuki, Akira; Kurosawa, Shunsuke; Nagata, Shinji; Yamamura, Tomoo; Pejchal, Jan; Yamaji, Akihiro; Yokota, Yuui; Shirasaki, Kenji; Homma, Yoshiya; Aoki, Dai; Shikama, Tatsuo; Yoshikawa, Akira

2014-07-01

1-mol%-Yb-doped Gd3Al2Ga3O12 infra-red scintillator crystal has been studied as a novel implantable radiation monitor in radiation therapy. Powder X-ray diffraction measurement and chemical analysis with a field emission scanning microscope and wavelength dispersive spectrometer determined its garnet structure and average chemical composition of Yb0.03±0.01Gd2.99±0.07Al2.21±0.08Ga2.64±0.09O12.10±0.09. Transmittance measurements reached high values of approximately 70% in the human body transparency region between 650 to 1200 nm. Photoluminescence peaks were detected around 970 and 1030 nm under the 940 nm excitation with a Xe lamp. Infra-red scintillation emissions were clearly observed around 970 and 1030 nm due to Yb3+ 4f-4f transitions under X-ray excitation. Therefore, these results suggest that Yb-doped Gd3Al2Ga3O12 might be used as an infra-red scintillator material.

Clad-pumped Er-nanoparticle-doped fiber laser (Conference Presentation)

NASA Astrophysics Data System (ADS)

Baker, Colin C.; Friebele, E. Joseph; Rhonehouse, Daniel L.; Marcheschi, Barbara A.; Peele, John R.; Kim, Woohong; Sanghera, Jasbinder S.; Zhang, Jun; Chen, Youming; Pattnaik, Radha K.; Dubinskii, Mark

2017-03-01

Erbium-doped fiber lasers are attractive for directed energy weapons applications because they operate in a wavelength region that is both eye-safer and a window of high atmospheric transmission. For these applications a clad-pumped design is desirable, but the Er absorption must be high because of the areal dilution of the doped core vs. the pump cladding. High Er concentrations typically lead to Er ion clustering, resulting in quenching and upconversion. Nanoparticle (NP) doping of the core overcomes these problems by physically surrounding the Er ions with a cage of Al and O in the NP, which keeps them separated to minimize excited state energy transfer. A significant issue is obtaining high Er concentrations without the NP agglomeration that degrades the optical properties of the fiber core. We have developed the process for synthesizing stable Er-NP suspension which have been used to fabricate EDFs with Er concentrations >90 dB/m at 1532 nm. Matched clad fibers have been evaluated in a core-pumped MOPA with pump and signal wavelengths of 1475 and 1560 nm, respectively, and efficiencies of 72% with respect to absorbed pump have been obtained. We have fabricated both NP- and solution-doped double clad fibers, which have been measured in a clad-pumped laser testbed using a 1532 nm pump. The 1595 nm laser efficiency of the NP-doped fiber was 47.7%, which is high enough for what is believed to be the first laser experiment with the cladding pumped, NP-doped fiber. Further improvements are likely with a shaped cladding and new low-index polymer coatings with lower absorption in the 1500 - 1600 nm range.

Electron traps in Gd3Ga3Al2O12:Ce garnets doped with rare-earth ions

NASA Astrophysics Data System (ADS)

Khanin, V. M.; Rodnyi, P. A.; Wieczorek, H.; Ronda, C. R.

2017-05-01

The curves of thermally stimulated luminescence of Gd3Ga3Al2O12:Ce3+ ceramics (a nominally pure sample and samples doped with rare-earth ions) are measured in the temperature range of 80-550 K. The depth and the frequency factor of electron traps established by Eu and Yb impurities are determined. An energy-level diagram of rare-earth ions in the bandgap of Gd3Ga3Al2O12 is presented.

Identification of Nanocrystalline Inclusions in Bismuth-Doped Silica Fibers and Preforms.

PubMed

Iskhakova, Liudmila D; Milovich, Filipp O; Mashinsky, Valery M; Zlenko, Alexander S; Borisovsky, Sergey E; Dianov, Evgeny M

2016-10-01

The nature of nanocrystalline inclusions and dopant distribution in bismuth-doped silicate fibers and preforms are studied by scanning and transmission electron microscopy, and energy and wavelength-dispersive X-ray microanalysis. The core compositions are Bi:SiO2, Bi:Al2O3-SiO2, Bi:GeO2-SiO2, Bi:Al2O3-GeO2-SiO2, and Bi:P2O5-Al2O3-GeO2-SiO2. Nanocrystals of metallic Bi, Bi2O3, SiO2, GeO2, and Bi4(GeO4)3 are observed in these glasses. These inclusions can be the reason for the background optical loss in bismuth-doped optical fibers. The bismuth concentration of 0.0048±0.0006 at% is directly measured in aluminosilicate optical fibers with effective laser generation (slope efficiency of 27% at room temperature).

The structural and optical properties of Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films from the first principles calculations

NASA Astrophysics Data System (ADS)

Zhang, Wenshu; Hu, Huijun; Zhang, Caili; Li, Jianguo; Li, Yuping; Ling, Lixia; Han, Peide

2017-12-01

Based on the density functional theory, the structural stability and optical properties of undoped and Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films are investigated. The good stability of the films based on the ZnO (0 0 0 1) can be obtained when the layer is larger than 12. Moreover, the dielectric function, refractive index, absorption, and reflectivity of doped ZnO nano thin films have been analyzed in detail. In the visible light range, the values of ZnO films from 12 to 24 layers are all smaller than those of the bulk. And with the augment of the layers, the values keep increasing. All the results signify that the nano film of 12 layers possesses the lowest reflectivity and weakest absorption. In addition, there is an evident impact of some doped element on the properties of nano films. The absorption and reflectivity of Ti, Si-doped ZnO nano thin films are higher than those of the clean films, while Al, B-doped are lower, especially B-doped. Moreover, the conductivity of the doped structure is better than that of the bulk. Thus, the B-doped ZnO nano thin films could be potential candidate materials of transparent conductive films.

Observations of Dynamic Strain Aging in Polycrystalline NiAl

NASA Technical Reports Server (NTRS)

Weaver, M. L.; Noebe, R. D.; Kaufman, M. J.

1996-01-01

Dynamic strain aging has been investigated at temperatures between 77 and 1100 K in eight polycrystalline NiAl alloys. The 0.2% offset yield stress and work hardening rates for these alloys generally decreased with increasing temperature. However, local plateaus or maxima were observed in conventional purity and carbon doped alloys at intermediate temperatures (600-900 K). This anomalous behavior was not observed in low interstitial high-purity, nitrogen doped, or in titanium doped materials. Low or negative strain rate sensitivities (SRS) were also observed in all eight alloys in this intermediate temperature range. Coincident with the occurrence of negative SRS was the occurrence of serrated flow in conventional purity alloys containing high concentrations of Si in addition to C. These phenomena have been attributed to dynamic strain aging (DSA). Chemical analysis of the alloys used in this study suggests that the main species causing strain aging in polycrystalline NiAl is C but indicate that residual Si impurities can enhance the strain aging effect.

When Al-Doped Cobalt Sulfide Nanosheets Meet Nickel Nanotube Arrays: A Highly Efficient and Stable Cathode for Asymmetric Supercapacitors.

PubMed

Huang, Jun; Wei, Junchao; Xiao, Yingbo; Xu, Yazhou; Xiao, Yujuan; Wang, Ying; Tan, Licheng; Yuan, Kai; Chen, Yiwang

2018-03-27

Although cobalt sulfide is a promising electrode material for supercapacitors, its wide application is limited by relative poor electrochemical performance, low electrical conductivity, and inefficient nanostructure. Here, we demonstrated that the electrochemical activity of cobalt sulfide could be significantly improved by Al doping. We designed and fabricated hierarchical core-branch Al-doped cobalt sulfide nanosheets anchored on Ni nanotube arrays combined with carbon cloth (denoted as CC/H-Ni@Al-Co-S) as an excellent self-standing cathode for asymmetric supercapacitors (ASCs). The combination of structural and compositional advantages endows the CC/H-Ni@Al-Co-S electrode with superior electrochemical performance with high specific capacitance (1830 F g -1 /2434 F g -1 at 5 mV s -1 /1 A g -1 ) and excellent rate capability (57.2%/72.3% retention at 1000 mV s -1 /100 A g -1 ). The corresponding all-solid-state ASCs with CC/H-Ni@Al-Co-S and multilayer graphene/CNT film as cathode and anode, respectively, achieve a high energy density up to 65.7 W h kg -1 as well as superb cycling stability (90.6% retention after 10 000 cycles). Moreover, the ASCs also exhibit good flexibility and stability under different bending conditions. This work provides a general, effective route to prepare high-performance electrode materials for flexible all-solid-state energy storage devices.

Dirac cones in artificial structures of 3d transitional-metals doped Mg-Al spinels

NASA Astrophysics Data System (ADS)

Lu, Yuan; Feng, Min; Shao, Bin; Zuo, Xu

2014-05-01

Motivated by recent theoretical predications for Dirac cone in two-dimensional (2D) triangular lattice [H. Ishizuka, Phys. Rev. Lett. 109, 237207 (2012)], first-principles studies are performed to predict Dirac cones in artificial structures of 3d transitional-metals (TM = Ti, V, Cr, Mn, Fe, Co, Ni, and Cu) doped Mg-Al spinels. In investigated artificial structures, TM dopants substitute specific positions of the B sub-lattice in Mg-Al spinel, and form a quasi-2D triangular lattice in the a-b plane. Calculated results illustrate the existence of the spin-polarized Dirac cones formed in d-wave bands at (around) the K-point in the momentum space. The study provides a promising route for engineering Dirac physics in condensed matters.

Investigation on thermo physical characteristics of ethylene glycol based Al:ZnO nanofluids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiruba, R., E-mail: krbranjini@gmail.com, E-mail: drkingson@karunya.edu; George, Ritty; Gopalakrishnan, M.

2015-06-24

The present work describes the experimental aspects of viscosity and thermal conductivity characteristics of nanofluids. Aluminium doped zinc oxide nanostructures were synthesized by chemical precipitation method. Ultrasonic technique is used to disperse the nanostructures in ethylene glycol. Structural and morphological properties of Al doped ZnO nanostructures are characterized using X-ray diffractometer and scanning electron microscopic technique. The effect of concentration and temperature on thermo-physical properties of Al/ZnO nanofluids is also investigated. The experimental results showed there is enhancement in thermal conductivity with rise in temperature which can be utilized for coolant application.

Tuning the hybridization and magnetic ground state of electron and hole doped CeOs2Al10 : An x-ray spectroscopy study

NASA Astrophysics Data System (ADS)

Chen, Kai; Sundermann, Martin; Strigari, Fabio; Kawabata, Jo; Takabatake, Toshiro; Tanaka, Arata; Bencok, Peter; Choueikani, Fadi; Severing, Andrea

2018-04-01

Here we present linear and circular polarized soft x-ray absorption spectroscopy (XAS) data at the Ce M4 ,5 edges of the electron (Ir) and hole-doped (Re) Kondo semiconductor CeOs2Al10 . Both substitutions have a strong impact on the unusual high Néel temperature TN=28.5 K, and also the direction of the ordered moment in case of Ir. The substitution dependence of the linear dichroism is weak thus validating the crystal-field description of CeOs2Al10 being representative for the Re and Ir substituted compounds. The impact of electron and hole doping on the hybridization between conduction and 4 f electrons is related to the amount of f0 in the ground state and reduction of x-ray magnetic circular dichroism. A relationship of c f -hybridization strength and enhanced TN is discussed. The direction and doping dependence of the circular dichroism strongly supports the idea of strong Kondo screening along the crystallographic a direction.

A novel method for simultaneous measurement of doped optical fiber parameters

NASA Astrophysics Data System (ADS)

Karimi, M.; Seraji, F. E.

2010-05-01

Simultaneous measurement technique of evaluating the doped optical fibers (DOF) parameters is a suitable scheme for DOF production industries. In this paper, we introduce a novel technique to characterize simultaneously the main parameters of DOF such as absorption and emission cross-sections (ACS, ECS), background loss coefficient (BLC), and low dopant concentration using the gain equation of DOFs. We used this new method to determine the ACS, ECS, BLC in a standard sample of Al-P-Erbium doped optical fiber. The results have been analyzed and compared with other reports.

Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer

NASA Astrophysics Data System (ADS)

Wang, Lei; Li, Rui; Li, Ding; Liu, Ningyang; Liu, Lei; Chen, Weihua; Wang, Cunda; Yang, Zhijian; Hu, Xiaodong

2010-02-01

AlN layer was grown as interlayer between undoped GaN and Mg doped Al0.14Ga0.86N/GaN superlattices (SLs) epilayer to modulate the strain distribution between Al0.14Ga0.86N barrier and GaN well layers in SLs sample. Strain relaxation was observed in the SLs sample with AlN interlayer by x-ray diffraction reciprocal space mapping method. The measured hole concentration of SLs sample with AlN interlayer at room temperature was over 1.6×1018 cm-3 but that was only 6.6×1016 cm-3 obtained in SLs sample without AlN interlayer. Variable temperature Hall-effect measurement showed that the acceptor activation energy decreased from 150 to 70 meV after inserting the AlN layer, which indicated that the strain modulation of SLs induced by AlN interlayer was beneficial to the Mg acceptor activation and hole concentration enhancement.

Cu-doped ZnO nanorod arrays: the effects of copper precursor and concentration

PubMed Central

2014-01-01

Cu-doped ZnO nanorods have been grown at 90°C for 90 min onto a quartz substrate pre-coated with a ZnO seed layer using a hydrothermal method. The influence of copper (Cu) precursor and concentration on the structural, morphological, and optical properties of ZnO nanorods was investigated. X-ray diffraction analysis revealed that the nanorods grown are highly crystalline with a hexagonal wurtzite crystal structure grown along the c-axis. The lattice strain is found to be compressive for all samples, where a minimum compressive strain of −0.114% was obtained when 1 at.% Cu was added from Cu(NO3)2. Scanning electron microscopy was used to investigate morphologies and the diameters of the grown nanorods. The morphological properties of the Cu-doped ZnO nanorods were influenced significantly by the presence of Cu impurities. Near-band edge (NBE) and a broad blue-green emission bands at around 378 and 545 nm, respectively, were observed in the photoluminescence spectra for all samples. The transmittance characteristics showed a slight increase in the visible range, where the total transmittance increased from approximately 80% for the nanorods doped with Cu(CH3COO)2 to approximately 90% for the nanorods that were doped with Cu(NO3)2. PMID:24855460

Magnetic State of Quasiordered Fe-Al Alloys Doped with Ga and B: Magnetic Phase Separation and Spin Order

NASA Astrophysics Data System (ADS)

Voronina, E. V.; Ivanova, A. G.; Arzhnikov, A. K.; Chumakov, A. I.; Chistyakova, N. I.; Pyataev, A. V.; Korolev, A. V.

2018-04-01

Results of structural, magnetic, and Mössbauer studies of quasi ordered alloys Fe65Al35 - x M x ( M x = Ga, B; x = 0, 5 at %) are presented. The magnetic state of examined structurally-single-phase alloys at low temperatures is interpreted from the viewpoint of magnetic phase separation. An explanation is proposed for the observed behavior of magnetic characteristics of Fe65Al35 and Fe65Al30Ga5 in the framework of the model of two magnetic phases, a ferromagnetic-type one and a spin density wave. The boron-doped alloy Fe65Al30B5 is shown to demonstrate behavior that is typical of materials with the ferromagnetic type of ordering.

Facile synthesis of a cationic-doped [Ca24Al28O64]4+(4e-) composite via a rapid citrate sol-gel method.

PubMed

Khan, Karim; Khan Tareen, Ayesha; Elshahat, Sayed; Yadav, Ashish; Khan, Usman; Yang, Minghui; Bibbò, Luigi; Ouyang, Zhengbiao

2018-03-12

One of the greatest challenges in the enhancement of the electrical properties of conductive mayenite [Ca 24 Al 28 O 64 ] 4+ (4e - ) (hereinafter C12A7:e - ) is the design of a more suitable/simple synthesis strategy that can be employed to obtain the required properties such as excellent stable electrical conductivity, a high electron concentration, outstanding mobility, and an exceptionally large surface area. Therefore, to synthesize C12A7:e - in the metallic state, we proposed a facile, direct synthesis strategy based on an optimized sol-gel combustion method under a nitrogen gas environment using the low-cost precursors Ca(NO 3 ) 2 ·4H 2 O and Al(NO 3 ) 3 ·9H 2 O. Using this developed strategy, we successfully synthesized moderately conductive nanoscale C12A7:e - powder, but with unexpected carbon components (reduced graphene oxide (rGO) and/or graphene oxide (GO)). The synthesized C12A7:e - composite at room temperature has an electrical conductivity of about 21 S cm -1 , a high electron concentration of approximately 1.5 × 10 21 cm -3 , and a maximum specific surface area of 265 m 2 g -1 . Probably, the synthesized rGO was coated on nanocage C12A7:e - particles. In general, the C12A7:e - electride is sensitive to the environment (especially to oxygen and moisture) and protected by an rGO coating on C12A7:e - particles, which also enhances the mobility and keeps the conductivity of C12A7:e - electride stable over a long period. Doped mayenite electride exhibits a conductivity that is strongly dependent on the substitution level. The conductivity of gallium-doped mayenite electride increases with the doping level and has a maximum value of 270 S cm -1 , which for the first time has been reported for the stable C12A7:e - electride. In the case of Si-substituted calcium aluminate, the conductivity has a maximum value of 222 S cm -1 at room temperature.

Intrinsic and extrinsic doping of ZnO and ZnO alloys

NASA Astrophysics Data System (ADS)

Ellmer, Klaus; Bikowski, André

2016-10-01

In this article the doping of the oxidic compound semiconductor ZnO is reviewed with special emphasis on n-type doping. ZnO naturally exhibits n-type conductivity, which is used in the application of highly doped n-type ZnO as a transparent electrode, for instance in thin film solar cells. For prospective application of ZnO in other electronic devices (LEDs, UV photodetectors or power devices) p-type doping is required, which has been reported only minimally. Highly n-type doped ZnO can be prepared by doping with the group IIIB elements B, Al, Ga, and In, which act as shallow donors according to the simple hydrogen-like substitutional donor model of Bethe (1942 Theory of the Boundary Layer of Crystal Rectifiers (Boston, MA: MIT Rad Lab.)). Group IIIA elements (Sc, Y, La etc) are also known to act as shallow donors in ZnO, similarly explainable by the shallow donor model of Bethe. Some reports showed that even group IVA (Ti, Zr, Hf) and IVB (Si, Ge) elements can be used to prepare highly doped ZnO films—which, however, can no longer be explained by the simple hydrogen-like substitutional donor model. More probably, these elements form defect complexes that act as shallow donors in ZnO. On the other hand, group V elements on oxygen lattice sites (N, P, As, and Sb), which were viewed for a long time as typical shallow acceptors, behave instead as deep acceptors, preventing high hole concentrations in ZnO at room temperature. Also, ‘self’-compensation, i.e. the formation of a large number of intrinsic donors at high acceptor concentrations seems to counteract the p-type doping of ZnO. At donor concentrations above about 1020 cm-3, the electrical activation of the dopant elements is often less than 100%, especially in polycrystalline thin films. Reasons for the electrical deactivation of the dopant atoms are (i) the formation of dopant-defect complexes, (ii) the compensation of the electrons by acceptors (Oi, VZn) or (iii) the formation of secondary phases, for

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Mele, P.; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

2013-06-01

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300 °C-600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10-3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Effect of aluminum contents on sputter deposited CrAlN thin films

NASA Astrophysics Data System (ADS)

Vyas, A.; Zhou, Z. F.; Shen, Y. G.

2018-02-01

Pure CrN and CrAlN films with varied Al concentrations were prepared onto Si(100) substrates by an unbalanced reactive dc-magnetron sputtering system. The crystal structure, chemical states, and microstructure of the films were characterized by X-ray diffraction, X-ray photoelectron microscopy, transmission electron microscopy whereas mechanical properties were determined by nano-indentation measurements. XRD results showed a prominent (200) reflection in both CrN and CrAlN films. Results demonstrate that CrAlN films formed a solid solution and doping of Al atoms replace the Cr atoms affecting the lattice parameter and crystallization of the films. All Al doped films were of B1 NaCl-type structure, demonstrating that CrAlN films primarily crystallized in cubic structure. Microstructural investigation by TEM for a CrAlN film containing Al content of 24.1 at.%, revealed that there exists an amorphous/nanocrystalline domains (grains of about ∼ 11 nm) and hardness increases 22% when compared with pure CrN film.

Scintillation properties of Tm-doped Lu 3Al 5O 12 single crystals

NASA Astrophysics Data System (ADS)

Sugiyama, Makoto; Fujimoto, Yutaka; Yanagida, Takayuki; Totsuka, Daisuke; Yokota, Yuui; Yoshikawa, Akira

2011-12-01

Using the micro-pulling-down (μ-PD) method, Tm-doped Lu 3Al 5O 12 (Tm:LuAG) single crystals were grown to examine their scintillation properties. In transmittance spectra, they exhibited about 80% transparency in the wavelengths longer than 320 nm and five absorption lines due to Tm 3+ 4f-4f transitions were observed. 241Am α-ray excited radioluminescence spectra were measured and intense 4f-4f emission peaks were observed with the host emission. When excited by 137Cs γ-Ray to obtain pulse height spectra, Tm 1% doped LuAG showed the highest light yield coupled with a photomultiplier (PMT) or a silicon avalanche photodiode (Si-APD). The light yield was estimated to be 5800 and 7300 photons/MeV for PMT and Si-APD, respectively. Decay time profiles consist of two exponential components and the fast and slow components are considered to be attributed to the host and the combination of the host and Tm 3+ 4f-4f emission, respectively.

Spectral properties of Dy3+ doped ZnAl2O4 phosphor

NASA Astrophysics Data System (ADS)

Prakash, Ram; Kumar, Sandeep; Mahajan, Rubby; Khajuria, Pooja; Kumar, Vinay; Choudhary, R. J.; Phase, D. M.

2018-05-01

Herein, Dy3+ doped ZnAl2O4 phosphor was synthesized by the solution combustion method. The synthesized phosphor was characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, UV-Vis spectroscopy and X-ray photoelectron spectroscopy (XPS). The phase purity of the phosphor was confirmed by the XRD studies that showed cubic symmetry of the synthesized phosphor. Under UV excitation (388 nm) the PL emission spectrum of the phosphor shows characteristic transition from the Dy3+ ion. A band gap of 5.2 eV was estimated from the diffused reflectance spectroscopy. The surface properties of the phosphor were studied using the X-ray photoelectron spectroscopy.

Characterization of SnO2 Film with Al-Zn Doping Using Sol-Gel Dip Coating Techniques

NASA Astrophysics Data System (ADS)

Doyan, A.; Susilawati; Ikraman, N.; Taufik, M.

2018-04-01

Sn1-2x AlxZnxO2 film has been developed using sol-gel dip coating technique. The materials SnCl2.2H2O, AlCl3 and ZnCl2 dissolved in water and ethanol with 5:95 volume ratio. Variations dopant concentration x = 0.000, 0.005, 0.0025, and 0.050. The film was grown with sol concentration 0.4 M, the withdrawal speed of 12 cm/min and sintering at 600 °C for 30 minutes. The characteristics Sn1-2x AlxZnxO2 films with various doping concentration phase were characterized by XRD. The morphological characteristics and the composition of the constituent elements of the film were characterized by SEM-EDX. The characteristics of the shape, structure, and size of the particles were characterized by TEM. The XRD results show that all films have a tetragonal SnO2 rutile phase without any secondary phase with an average particle size in the range 5.14 – 2.09 nm. The SEM results show that the film grown has a smooth morphology with a striped texture (x = 0.00), and there is a crack (x = 0.050). The EDX results show that the composition and distribution of the constituent elements of the film are uniformly distributed. TEM results show that the particle films has tetragonal rutile structure, orthorhombic and amorphous with a spherical shape.

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

NASA Astrophysics Data System (ADS)

Ni, Yi-Qiang; He, Zhi-Yuan; Yao, Yao; Yang, Fan; Zhou, De-Qiu; Zhou, Gui-Lin; Shen, Zhen; Zhong, Jian; Zheng, Yue; Zhang, Bai-Jun; Liu, Yang

2015-05-01

We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (˜ 109). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

Zirconium doped nano-dispersed oxides of Fe, Al and Zn for destruction of warfare agents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stengl, Vaclav, E-mail: stengl@uach.cz; Houskova, Vendula; Bakardjieva, Snejana

2010-11-15

Zirconium doped nano dispersive oxides of Fe, Al and Zn were prepared by a homogeneous hydrolysis of the respective sulfate salts with urea in aqueous solutions. Synthesized metal oxide hydroxides were characterized using Brunauer-Emmett-Teller (BET) surface area and Barrett-Joiner-Halenda porosity (BJH), X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM) and energy-dispersive X-ray microanalysis (EDX). These oxides were taken for an experimental evaluation of their reactivity with sulfur mustard (HD or bis(2-chloroethyl)sulfide), soman (GD or (3,3'-Dimethylbutan-2-yl)-methylphosphonofluoridate) and VX agent (S-[2-(diisopropylamino)ethyl]-O-ethyl-methylphosphonothionate). The presence of Zr{sup 4+} dopant can increase both the surface area and the surface hydroxylation of the resultingmore » doped oxides, decreases their crystallites' sizes thereby it may contribute in enabling the substrate adsorption at the oxide surface thus it can accelerate the rate of degradation of warfare agents. Addition of Zr{sup 4+} converts the product of the reaction of ferric sulphate with urea from ferrihydrite to goethite. We found out that doped oxo-hydroxides Zr-FeO(OH) - being prepared by a homogeneous hydrolysis of ferric and zirconium oxo-sulfates mixture in aqueous solutions - exhibit a comparatively higher degradation activity towards chemical warfare agents (CWAs). Degradation of soman or VX agent on Zr-doped FeO(OH) containing ca. 8.3 wt.% of zirconium proceeded to completion within 30 min.« less

EPR study of chromium-doped forsterite crystals: Cr3+( M1) with associated trivalent ions Al3+ and Sc3+

NASA Astrophysics Data System (ADS)

Ryabov, I. D.

2012-10-01

Electron paramagnetic resonance (EPR) study of single crystals of forsterite co-doped with chromium and scandium has revealed, apart from the known paramagnetic centers Cr3+( M1) and Cr3+( M1)- V_{{{{Mg}}^{2 + } }} ( M2) (Ryabov in Phys Chem Miner 38:177-184, 2011), a new center Cr3+( M1)- V_{{{{Mg}}^{2 + } }} ( M2)-Sc3+ formed by a Cr3+ ion substituting for Mg2+ at the M1 structural position with a nearest-neighbor Mg2+ vacancy at the M2 position and a Sc3+ ion presumably at the nearest-neighbor M1 position. For this center, the conventional zero-field splitting parameters D and E and the principal g values have been determined as follows: D = 33,172(29) MHz, E = 8,482(13) MHz, g = [1.9808(2), 1.9778(2), 1.9739(2)]. The center has been compared with the known ion pair Cr3+( M1)-Al3+ (Bershov et al. in Phys Chem Miner 9:95-101, 1983), for which the refined EPR data have been obtained. Based on these data, the known sharp M1″ line at 13,967 cm-1 (with the splitting of 1.8 cm-1), observed in low-temperature luminescence spectra of chromium-doped forsterite crystals (Glynn et al. in J Lumin 48, 49:541-544, 1991), has been ascribed to the Cr3+( M1)-Al3+ center. It has been found that the concentration of the new center increases from 0 up to 4.4 × 1015 mg-1, whereas that of the Cr3+( M1) and Cr3+( M1)- V_{{{{Mg}}^{2 + } }} ( M2) centers quickly decreases from 7.4 × 1015 mg-1 down to 3 × 1015 mg-1 and from 2.7 × 1015 mg-1 down to 0.5 × 1015 mg-1, i.e., by a factor of 2.5 and 5.4, respectively, with an increase of the Sc content from 0 up to 0.22 wt % (at the same Cr content 0.25 wt %) in the melt. When the Sc content exceeds that of Cr, the concentration of the new center decreases most likely due to the formation of the Sc3+( M1)- V_{{{{Mg}}^{2 + } }} ( M2)-Sc3+ complex instead of the Cr3+( M1)- V_{{{{Mg}}^{2 + } }} ( M2)-Sc3+ center. The formation of such ordered neutral complex is in agreement with the experimental results, concerning the incorporation of Sc

2H and 27Al solid-state NMR study of the local environments in Al-doped 2-line ferrihydrite, goethite, and lepidocrocite

DOE PAGES

Kim, Jongsik; Ilott, Andrew J.; Middlemiss, Derek S.; ...

2015-05-13

Although substitution of aluminum into iron oxides and oxyhydroxides has been extensively studied, it is difficult to obtain accurate incorporation levels. Assessing the distribution of dopants within these materials has proven especially challenging because bulk analytical techniques cannot typically determine whether dopants are substituted directly into the bulk iron oxide or oxyhydroxide phase or if they form separate, minor phase impurities. These differences have important implications for the chemistry of these iron-containing materials, which are ubiquitous in the environment. In this work, 27Al and 2H NMR experiments are performed on series of Al-substituted goethite, lepidocrocite, and 2-line ferrihydrite in ordermore » to develop an NMR method to track Al substitution. The extent of Al substitution into the structural frameworks of each compound is quantified by comparing quantitative 27Al MAS NMR results with those from elemental analysis. Magnetic measurements are performed for the goethite series to compare with NMR measurements. Static 27Al spin–echo mapping experiments are used to probe the local environments around the Al substituents, providing clear evidence that they are incorporated into the bulk iron phases. As a result, predictions of the 2H and 27Al NMR hyperfine contact shifts in Al-doped goethite and lepidocrocite, obtained from a combined first-principles and empirical magnetic scaling approach, give further insight into the distribution of the dopants within these phases.« less

Electrical and structural properties of Nb-doped TiO2 at different Nb concentrations deposited by spin coating technique

NASA Astrophysics Data System (ADS)

Saurdi, I.; Shafura, A. K.; Mamat, M. H.; Ishak, A.; Rusop, M.

2018-05-01

In this paper, the Nb-doped TiO2 films were deposited on glass substrate and their electrical and structural properties were investigated. The results revealed that the resistivity of Nb-doped TiO2 films of 0 at.%, 1 at.%, 3 at.%, 5 at.% and 7 at.% were 2.78 × 105, 1.35 × 105 Ω.cm, 5.89 × 104 Ω.cm, 9.20 × 102 Ω.cm and 9.56 × 103 Ω.cm, respectively. Where, the lowest resistivity of 9.20 × 102 Ω.cm was obtained at 5at.% Nb-doped TiO2 films. The resistivity of Nb-doped TiO2 films decreases as the Nb concentration increased from 0 at.% to 5 at.%. However, the resistivity decrease at 7 at.% Nb-doped TiO2 films. Meanwhile, from the FESEM images the Nb-doped TiO2 films with 0 at.%, 1 at.%, 3 at.% and 5 at.% Nb had a rough and porous structures were observed. However, the Nb-doped TiO2 at 7 at.% has a agglomerated and denser structures.

Improved alumina scale adhesion of electron beam physical vapor deposited Dy/Hf-doped β-NiAl coatings

NASA Astrophysics Data System (ADS)

Li, Dongqing; Guo, Hongbo; Peng, Hui; Gong, Shengkai; Xu, Huibin

2013-10-01

The cyclic oxidation behavior of Dy/Hf-doped β-NiAl coatings produced by electron beam physical vapor deposition (EB-PVD) was investigated. For the undoped NiAl coating, numerous voids were formed at the alumina scale/coating interface and large rumpling developed in the scale, leading to premature oxide spallation. The addition of Dy and Hf both improved scale adhesion and the alumina scale grown on the NiAl-Hf coating showed better adhesion than that on the NiAl-Dy coating, although the suppressing effect on interfacial void formation and the scale rumpling resistance were stronger in the NiAl-Dy coating. It is proposed that the segregation of Dy and Hf ions at the scale/coating interfaces not only prevent interfacial sulfur segregation but also may directly enhance interfacial adhesion by participating in bonding across the interfaces, and this strengthening effect is relatively stronger for Hf ionic segregation.

Bound-to-bound midinfrared intersubband absorption in carbon-doped GaAs /AlGaAs quantum wells

NASA Astrophysics Data System (ADS)

Malis, Oana; Pfeiffer, Loren N.; West, Kenneth W.; Sergent, A. Michael; Gmachl, Claire

2005-08-01

Bound-to-bound intersubband absorption in the valence band of modulation-doped GaAs quantum wells with digitally alloyed AlGaAs barriers was studied in the midinfrared wavelength range. A high-purity solid carbon source was used for the p-type doping. Strong narrow absorption peaks due to heavy-to-heavy hole transitions are observed with out-of-plane polarized light, and weaker broader features with in-plane polarized light. The heavy-to-heavy hole transition energy spans the spectral range between 206 to 126 meV as the quantum well width is increased from 25 to 45 Å. The experimental results are found to be in agreement with calculations of a six-band k •p model taking into account the full band structure of the digital alloy.

Synergetic effects of Al3+ doping and graphene modification on the electrochemical performance of V2O5 cathode materials.

PubMed

Zhu, Kai; Qiu, Hailong; Zhang, Yongquan; Zhang, Dong; Chen, Gang; Wei, Yingjin

2015-03-01

A series of V2O5-based cathode materials that include V2O5 and Al0.14 V2O5 nanoparticles, V2O5/reduced graphene oxide (RGO), and Al0.16 V2O5/RGO nanocomposites are prepared by a simple soft chemical method. XRD and Raman scattering show that the Al ions reside in the interlayer space of the materials. These doping ions strengthen the V−O bonds of the [VO5] unit and enhance the linkage of the [VO5] layers, which thus increases the structural stability of V2O5. SEM and TEM images show that the V2O5 nanoparticles construct a hybrid structure with RGO that enables fast electron transport in the electrode matrix. The electrochemical properties of the materials are studied by charge-discharge cycling, cyclic voltammetry, and electrochemical impedance spectroscopy. Of all the materials tested, the one that contained both Al ions and RGO (Al0.16 V2O5/RGO) exhibited the highest discharge capacity, the best rate capability, and excellent capacity retention. The superior electrochemical performance is attributed to the synergetic effects of Al(3+) doping and RGO modification, which not only increase the structural stability of the V2O5 lattice but also improve the electrochemical kinetics of the material. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom in GaN monolayer

NASA Astrophysics Data System (ADS)

Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

2015-01-01

We calculate Mg-acceptor activation energy EA and investigate the influence of O-atom, occupied the Mg nearest-neighbor, on EA in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. We find that the N-atom bonded with Ga-atom is more easily substituted by O-atom and nMgGa-ON (n = 1-3) complexes are favorable and stable in the SL. The O-atom plays a dominant role in reducing EA. The shorter the Mg-O bond is, the smaller the EA is. The Mg-acceptor activation energy can be reduced significantly by nMgGa-ON δ-codoping. Our calculated EA for 2MgGa-ON is 0.21 eV, and can be further reduced to 0.13 eV for 3MgGa-ON, which results in a high hole concentration in the order of 1020 cm-3 at room temperature in (AlN)5/(GaN)1 SL. Our results prove that nMgGa-ON (n = 2,3) δ-codoping in AlN/GaN SL with ultrathin GaN-layer is an effective way to improve p-type doping efficiency in Al-rich AlGaN.

Photoluminescence and cathodoluminescence of Tb-doped Al 2O 3-ZrO 2 nanostructures obtained by sol-gel method

NASA Astrophysics Data System (ADS)

Zawadzki, M.; Hreniak, D.; Wrzyszcz, J.; Miśta, W.; Grabowska, H.; Malta, O. L.; Stręk, W.

2003-07-01

Terbium-doped Al 2O 3-ZrO 2 mixed oxides of 10 wt% zirconia content were prepared by the alkoxide sol-gel method. The obtained samples were characterized by XRD, SEM, thermal analysis, textural and TPR studies. The effect of thermal treatment of Tb-doped Al 2O 3-ZrO 2 samples on photo- and cathodoluminescence spectra was investigated. It was found that the photoluminescence spectrum induced by UV excitation was characterized by a green luminescence pattern arising from the 5D 4 → 7F J ( J=6-0) transitions of the Tb 3+ ion. This photoluminescence became almost completely damped for the samples sintered at 1200 °C. However, these samples have demonstrated an intense cathodoluminescence under high electron accelerating potential (60 kV). Moreover, it was observed that apart of the green luminescence, the blue emission lines arising from 5D 3 → 7F J transitions of Tb 3+ were observed. The nature of such behavior is discussed.

Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

NASA Astrophysics Data System (ADS)

Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

2016-12-01

We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

Enhanced High-Temperature Cyclic Stability of Al-Doped Manganese Dioxide and Morphology Evolution Study Through in situ NMR under High Magnetic Field.

PubMed

Huang, Shenggen; Sun, Jian; Yan, Jian; Liu, Jiaqin; Wang, Weijie; Qin, Qingqing; Mao, Wenping; Xu, Wei; Wu, Yucheng; Wang, Junfeng

2018-03-21

In this work, Al-doped MnO 2 (Al-MO) nanoparticles have been synthesized by a simple chemical method with the aim to enhance cycling stability. At room temperature and 50 °C, the specific capacitances of Al-MO are well-maintained after 10 000 cycles. Compared with pure MnO 2 nanospheres (180.6 F g -1 at 1 A g -1 ), Al-MO also delivers an enhanced specific capacitance of 264.6 F g -1 at 1 A g -1 . During the cycling test, Al-MO exhibited relatively stable structure initially and transformed to needlelike structures finally both at room temperature and high temperature. In order to reveal the morphology evolution process, in situ NMR under high magnetic field has been carried out to probe the dynamics of structural properties. The 23 Na spectra and the SEM observation suggest that the morphology evolution may follow pulverization/reassembling process. The Na + intercalation/deintercalation induced pulverization, leading to the formation of tiny MnO 2 nanoparticles. After that, the pulverized tiny nanoparticles reassembled into new structures. In Al-MO electrodes, doping of Al 3+ could slow down this structure evolution process, resulting in a better electrochemical stability. This work deepens the understanding on the structural changes in faradic reaction of pseudocapacitive materials. It is also important for the practical applications of MnO 2 -based supercapacitors.

Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-02-01

Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chavanapranee, Tosaporn; Horikoshi, Yoshiji

The characteristics of heavily Sn-doped GaAs samples grown at 300 deg. C by a migration-enhanced epitaxy (MEE) technique are investigated in comparison with those of the samples grown by a conventional molecular-beam epitaxy (MBE) at 580 deg. C. While no discernible difference is observed in the low doping regime, the difference in doping characteristics between the MBE- and MEE-grown samples becomes apparent when the doping concentration exceeds 1x10{sup 19} cm{sup -3}. Sn atoms as high as 4x10{sup 21} cm{sup -3} can be incorporated into MEE-grown GaAs films, unlike the MBE-grown samples that have a maximum doping level limited around 1x10{supmore » 19} cm{sup -3}. Due to an effective suppression of Sn segregation in the MEE growth case, high quality GaAs films with abrupt high-concentration Sn-doping profiles are achieved with the doping concentrations of up to 2x10{sup 21} cm{sup -3}. It has been shown that even though a high concentration of Sn atoms is incorporated into the GaAs film, the electron concentration saturates at 6x10{sup 19} cm{sup -3} and then gradually decreases with Sn concentration. The uniform doping limitation, as well as the electron concentration saturation, is discussed by means of Hall-effect measurement, x-ray diffraction, and Raman scattering spectroscopy.« less

Electromechanical and Photoluminescence Properties of Al-doped ZnO Nanorods Applied in Piezoelectric Nanogenerators

NASA Astrophysics Data System (ADS)

Chang, Wen-Yang; Fang, Te-Hua; Tsai, Ju-Hsuan

2015-02-01

A piezoelectric nanogenerator based on Al-doped ZnO (AZO) nanorods with a V-zigzag layer is investigated at a low temperature. The growth temperature, growth time, growth concentration, photoluminescence (PL) spectrum, and AZO epitaxial growth on the ITO glass substrate using aqueous solution are reported and the associated electromechanical and PL properties are discussed. In general, the properties of piezoelectric nanogenerators and their functionality at ultralow temperatures (near liquid helium temperature) are important for applications in extreme environments. A V-zigzag layer is used to enhance the bending and compression deformation of the piezoelectric nanogenerator. The electromechanical properties of AZO nanorods are tested using an ultrasonic wave generator. Results show that the percent transmittance decreases with increasing growth time and growth temperature. The intensities of the PL spectrum and the (002) peak orientation increases with increasing growth temperature. AZO at a low growth temperature of 90 C has good piezoelectric harvesting efficiency when the piezoelectric nanogenerator has a zigzag structure. The average current, voltage, and power density of the piezoelectric harvesting are 0.76 A, 1.35 mV, and 1.026 nW/mm, respectively. These results confirm the feasibility of growing AZO at low temperature. AZO nanorods have potential for energy harvester applications.

Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

NASA Astrophysics Data System (ADS)

Ryu, Han-Youl; Lee, Jong-Moo

2013-05-01

A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer

NASA Astrophysics Data System (ADS)

Kong, Bo Hyun; Cho, Hyung Koun; Kim, Mi Yang; Choi, Rak Jun; Kim, Bae Kyun

2011-07-01

For the fabrication of InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) showing large area emission, transparent Al-doped ZnO (AZO) films grown by atomic layer deposition at relatively low temperatures were introduced as current spreading layers. These AZO films with an Al content of 3 at% showed a low electrical resistivity of <10 -3-10 -4 Ω cm, a high carrier concentration of >10 20 cm -3, and an excellent optical transmittance of ˜85%, in spite of the low growth temperature. The deposition of the AZO film induced an intense blue emission from the whole surface of the p-GaN and weak ultraviolet emission from the n-AZO and p-GaN junction. At an injection current of 50 mA, the output powers of the blue LEDs were 1760 and 1440 mcd for the samples with AZO thicknesses of 100 and 300 nm, respectively.

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Le, H. Q.; Lim, S. K.; Goh, G. K. L.; Chua, S. J.; Ang, N. S. S.; Liu, W.

2010-09-01

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl2O4 spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×1020 cm-3 (and carrier mobility of 28 cm2/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.

[Synthesis and characterization of chromium doped Y3Al5O12 compound pigment].

PubMed

Yue, Shi-Juan; Su, Xiao; Jiang, Han-Jie; Liu, Shao-Xuan; Hong, You-Li; Zhang, Kai; Huang, Wan-Xias; Xiong, Zu-Jiang; Zhao, Ying; Liu, Cui-Ge; Wei, Yong-Ju; Meng, Tao; Xu, Yi-Zhuang; Wu, Jin-Guang

2012-09-01

The authors synthesized a new kind of green pigment via co-precipitation method by doping Y3Al5O12 with Cr+. The size of the pigment particles is around 200 nm as observed under scanning electron microscope. XRD results demonstrate that the pigment crystalline form of the pigment is yttrium alluminium garnet. UV-Vis spectra were used to investigate the coordination states and transition behavior of the doping ions. In addition, the colour feature was measured by CIE L* a* b* chroma value. The pigment was blended with polypropylene and then polypropylene fiber was produced using the polypropelene-pigment composite via molten spinning process. The distribution of the pigment particles in the polypropylene fibers was characterized by Xray computed tomography (CT) technique on the Beijing synchrotron radiation facility. The result states that the composite oxide pigment particles are homogeneously dispersed in the polypropylene fibers. The pigments are stable, non-toxic to the environment, and may be applied in non-aqueous dyeing to reduce waste water emitted by textile dyeing and printing industry.

Dielectric properties and nonlinear I-V electrical behavior of (Li1+, Al3+) co-doped CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Sun, Li; Ni, Qing; Guo, Jianqin; Cao, Ensi; Hao, Wentao; Zhang, Yongjia; Ju, Lin

2018-06-01

(Li1+, Al3+) co-doped CaCu3Ti4O12 ceramics (CaCu3-2 x Li x Al x Ti4O12, x = 0.05, 0.1, 0.15) were prepared by a sol-gel method and were sintered at 1020-1080 °C for 8 h to improve the geometric microstructure, dielectric and nonlinear I-V electrical properties. Notably, very high dielectric constant of 1 × 105 with good dielectric-frequency as well as dielectric-temperature stability can be achieved in CaCu2.8Li0.1Al0.1Ti4O12 ceramic sintered at 1060 °C. The average grain sizes, resistivity and the non-Ohmic properties are also improved compared to pure CaCu3Ti4O12. These results indicate that (Li1+, Al3+) co-doping at the Cu2+ site can improve the dielectric properties of CaCu3Ti4O12, supporting the internal barrier layer capacitance effect of Schottky barriers at grain boundaries.

Luminescence and energy transfer of Tb3+-doped BaO-Gd2O3-Al2O3-B2O3-SiO2 glasses.

PubMed

Zuo, Chenggang; Huang, Jinze; Liu, Shaoyou; Xiao, Anguo; Shen, Youming; Zhang, Xiangyang; Zhou, Zhihua; Zhu, Ligang

2017-12-05

Transparent Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses with the greater than 4g/cm 3 were prepared by high temperature melting method and its luminescent properties have been investigated by measured UV-vis transmission, excitation, emission and luminescence decay spectra. The transmission spectrum shows there are three weak absorption bands locate at about 312, 378 and 484nm in the glasses and it has good transmittance in the visible spectrum region. Intense green emission can be observed under UV excitation. The effective energy transfer from Gd 3+ ion to Tb 3+ ion could occur and sensitize the luminescence of Tb 3+ ion. The green emission intensity of Tb 3+ ion could change with the increasing SiO 2 /B 2 O 3 ratio in the borosilicate glass matrix. With the increasing concentration of Tb 3+ ion, 5 D 4 → 7 F J transitions could be enhanced through the cross relaxation between the two nearby Tb 3+ ions. Luminescence decay time of 2.12ms from 546nm emission is obtained. The results indicate that Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses would be potential scintillating material for applications in X-ray imaging. Copyright © 2017 Elsevier B.V. All rights reserved.

Crystal and electronic structures, luminescence properties of Eu 2+-doped Si 6-zAl zO zN 8-z and M ySi 6-zAl z-yO z+yN 8-z-y ( M=2Li, Mg, Ca, Sr, Ba)

NASA Astrophysics Data System (ADS)

Li, Y. Q.; Hirosaki, N.; Xie, R. J.; Takeda, T.; Mitomo, M.

2008-12-01

The crystal structure, electronic structure, and photoluminescence properties of Eu xSi 6-zAl z-xO z+xN 8-z-x ( x=0-0.1, 0< z<1) and Eu xM ySi 6-zAl z-x-yO z+x+yN 8-z-x-y ( M=2Li, Mg, Ca, Sr, Ba) have been studied. Single-phase Eu xSi 6-zAl z-xO z+xN 8-z-x can be obtained in very narrow ranges of x⩽0.06 ( z=0.15) and z<0.5 ( x=0.3), indicating that limited Eu 2+ ions can be incorporated into nitrogen-rich Si 6-zAl zO zN 8-z. The Eu 2+ ion is found to occupy the 2 b site in a hexagonal unit cell ( P6 3/ m) and directly connected by six adjacent nitrogen/oxygen atoms ranging 2.4850-2.5089 Å. The calculated host band gaps by the relativistic DV-X α method are about 5.55 and 5.45 eV (without Eu 2+ 4 f5 d levels) for x=0 and 0.013 in Eu xSi 6-zAl z-xO z+xN 8-z-x ( z=0.15), in which the top of the 5 d orbitals overlap with the Si-3 s3 p and N-2 p orbitals within the bottom of the conduction band of the host. Eu xSi 6-zAl z-xO z+xN 8-z-x shows a strong green emission with a broad Eu 2+ band centered at about 530 nm under UV to near-UV excitation range. The excitation and emission spectra are hardly modified by Eu concentration and dual-doping ions of Li and other alkaline-earth ions with Eu. Higher Eu concentrations can significantly quench the luminescence of Eu 2+ and decrease the thermal quenching temperature. In addition, the emission spectrum can only be slightly tuned to the longer wavelengths (˜529-545 nm) by increasing z within the solid solution range of z<0.5. Furthermore, the luminescence intensity of Eu xSi 6-zAl z-xO z+xN 8-z-x can be improved by increasing z and the dual-doping of Li and Ba.

Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

NASA Astrophysics Data System (ADS)

Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

2015-12-01

The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

NASA Astrophysics Data System (ADS)

Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga N.; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George D.

2016-12-01

We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2-2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of 0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10-6 A/mm ( V gs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed.