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Sample records for aligned zno nanowires

  1. Growth of vertically aligned one-dimensional ZnO nanowire arrays on sol-gel derived ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kitazawa, Nobuaki; Aono, Masami; Watanabe, Yoshihisa

    2014-11-01

    Vertically aligned one-dimensional ZnO nanowire arrays have been synthesized by a hydrothermal method on sol-gel derived ZnO films. Sol-gel derived ZnO films and corresponding ZnO nanowire arrays have been characterized by X-ray diffraction and field-emission scanning electron microscopy. The effect of sol-gel derived ZnO film surface on the morphology of ZnO nanowire arrays has been investigated. The authors suggest from our investigation that sol-gel derived ZnO films affect the growth of one-dimensional ZnO nanostructures. Not only crystalline ZnO films but also amorphous ones can act as a scaffold for ZnO nucleus. Tilted ZnO micro-rods are grown on ZnO gel films, whereas vertically aligned ZnO nanowire arrays are grown on nanometer-sized ZnO grains. The average diameter of ZnO nanowire arrays are correlated strongly with the grain size of sol-gel derived ZnO films.

  2. Wafer-scale high-throughput ordered growth of vertically aligned ZnO nanowire arrays.

    PubMed

    Wei, Yaguang; Wu, Wenzhuo; Guo, Rui; Yuan, Dajun; Das, Suman; Wang, Zhong Lin

    2010-09-01

    This article presents an effective approach for patterned growth of vertically aligned ZnO nanowire (NW) arrays with high throughput and low cost at wafer scale without using cleanroom technology. Periodic hole patterns are generated using laser interference lithography on substrates coated with the photoresist SU-8. ZnO NWs are selectively grown through the holes via a low-temperature hydrothermal method without using a catalyst and with a superior control over orientation, location/density, and as-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass. This combined approach demonstrates a novel method of manufacturing large-scale patterned one-dimensional nanostructures on various substrates for applications in energy harvesting, sensing, optoelectronics, and electronic devices. PMID:20681617

  3. Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Kar, J. P.; Das, S. N.; Choi, J. H.; Lee, T. I.; Seo, J.; Lee, T.; Myoung, J. M.

    2011-03-01

    Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF 2) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires.

  4. Fundamental understanding of the growth, doping and characterization of aligned ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Shen, Gang

    Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton binding energy (60 meV) make it compelling for optoelectronic devices such as light emitting diodes, lasers, photodetectors, solar cells, and mechanical energy harvesting devices. One dimensional structures of ZnO (nanowires) have become significant due to their unique physical properties arising from quantum confinement, and they are ideal for studying transport mechanisms in one-dimensional systems. In this doctoral research work, ZnO nanowire (NW) arrays were synthesized on sapphire substrates through carbo-thermal reduction of ZnO powders, and the effects of growth parameters on the properties of ZnO NW arrays were studied by scanning and transmission electron microscopy, X-ray diffraction, photoluminescence and Raman spectroscopy. Based on the phonon mode selection rules in wurtzite ZnO, confocal Raman spectroscopy was used to assess the alignment of ZnO NWs in an array, thereby complementing X-ray diffraction. Al doped ZnO NW arrays were achieved by mixing Al powder into the ZnO and graphite source mixture, and the presence of Al was confirmed by Energy-dispersive X-ray spectroscopy. The incorporation of Al had the effects of lowering the electrical resistivity, slightly deteriorating crystal quality and suppressing defect related green emission. Two models of ZnO NW growth were developed by establishing the relationship between NW length and diameter for undoped and Al doped ZnO NWs separately. The growth of undoped ZnO NWs followed the diffusion-induced model which was characterized by thin wires being longer than thick wires, while the growth of Al doped ZnO was controlled by Gibbs-Thomson effect which was characterized by thin wires being shorter than thin wires. Local electrode atom probe analysis of ZnO NWs was carried out to study the crystal stoichiometry and Al incorporation. Undoped ZnO NWs were found to be high purity with no detectable impurities

  5. Field emission behavior of vertically aligned ZnO nanowire planar cathodes

    SciTech Connect

    Semet, V.; Binh, Vu Thien; Pauporte, Th.; Joulaud, L.; Vermersch, F. J.

    2011-03-01

    A field emission (FE) study by scanning anode field emission microscopy was performed to evaluate the FE properties of vertically aligned zinc oxide (ZnO) nanowire arrays electrodeposited on a plane conductive surface. The specific FE behaviors of the cathode observed experimentally are (1) a turn-on macroscopic field of about 6 V/{mu}m for a FE current density J{sub FE} 5 x 10{sup -4} A/cm{sup 2}, (2) a stable FE characteristics for 5 x 10{sup -4} < J{sub FE} < 5 x 10{sup -2} A/cm{sup 2}, and (3) a brutal shut down of FE when J{sub FE} crossed a limiting value of {approx}0.05 A/cm{sup 2} due to a rapid evolution of the nanowires toward a bulbous tip geometry or a complete melting. A physical process of FE from ZnO nanostructures is proposed from the experimental data analyses. An effective surface barrier of about 1 eV was determined from the experimental Fowler-Nordheim plot and the presence of a Zn enriched surface was assumed in considering the possibility of important modifications of the crystallography and charge transfers at the surface of ZnO nanowires during the application of the strong electric field required for FE.

  6. Enhanced UV photosensitivity from rapid thermal annealed vertically aligned ZnO nanowires

    PubMed Central

    2011-01-01

    We report on the major improvement in UV photosensitivity and faster photoresponse from vertically aligned ZnO nanowires (NWs) by means of rapid thermal annealing (RTA). The ZnO NWs were grown by vapor-liquid-solid method and subsequently RTA treated at 700°C and 800°C for 120 s. The UV photosensitivity (photo-to-dark current ratio) is 4.5 × 103 for the as-grown NWs and after RTA treatment it is enhanced by a factor of five. The photocurrent (PC) spectra of the as-grown and RTA-treated NWs show a strong peak in the UV region and two other relatively weak peaks in the visible region. The photoresponse measurement shows a bi-exponential growth and bi-exponential decay of the PC from as-grown as well as RTA-treated ZnO NWs. The growth and decay time constants are reduced after the RTA treatment indicating a faster photoresponse. The dark current-voltage characteristics clearly show the presence of surface defects-related trap centers on the as-grown ZnO NWs and after RTA treatment it is significantly reduced. The RTA processing diminishes the surface defect-related trap centers and modifies the surface of the ZnO NWs, resulting in enhanced PC and faster photoresponse. These results demonstrated the effectiveness of RTA processing for achieving improved photosensitivity of ZnO NWs. PMID:21859456

  7. Low-Cost, Large-Area, Facile, and Rapid Fabrication of Aligned ZnO Nanowire Device Arrays.

    PubMed

    Cadafalch Gazquez, Gerard; Lei, Sidong; George, Antony; Gullapalli, Hemtej; Boukamp, Bernard A; Ajayan, Pulickel M; Ten Elshof, Johan E

    2016-06-01

    Well aligned nanowires of ZnO have been made with an electrospinning technique using zinc acetate precursor solutions. Employment of two connected parallel collector plates with a separating gap of 4 cm resulted in a very high degree of nanowire alignment. By adjusting the process parameters, the deposition density of the wires could be controlled. Field effect transistors were prepared by depositing wires between two gold electrodes on top of a heavily doped Si substrate covered with a 300 nm oxide layer. These devices showed good FET characteristics and photosensitivity under UV-illumination. The method provides a fast and scalable fabrication route for functional nanowire arrays with a high degree of alignment and control over nanowire spacing. PMID:27173007

  8. Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method

    SciTech Connect

    Mohanan, Ajay Achath; Parthiban, R.; Ramakrishnan, N.

    2015-08-15

    Highlights: • ZnO nanowires were grown directly on LiNbO{sub 3} surface for the first time by thermal evaporation. • Self-alignment of the nanowires due to step bunching of LiNbO{sub 3} surface is observed. • Increased roughness in surface defects promoted well-aligned growth of nanowires. • Well-aligned growth was then replicated in 50 nm deep trenches on the surface. • Study opens novel pathway for patterned growth of ZnO nanowires on LiNbO{sub 3} surface. - Abstract: High aspect ratio catalyst-free ZnO nanowires were directly synthesized on lithium niobate substrate for the first time through thermal evaporation method without the use of a buffer layer or the conventional pre-deposited ZnO seed layer. As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching of the polished lithium niobate surface during the nanowire growth process. On the contrary, scratches on the surface and edges of the substrate produced well-aligned ZnO nanowires in these defect regions due to high surface roughness. Thus, the crisscross aligned nature of high aspect ratio nanowire growth on the lithium niobate surface can be changed to well-aligned growth through controlled etching of the surface, which is further verified through reactive-ion etching of lithium niobate. The investigations and discussion in the present work will provide novel pathway for self-seeded patterned growth of well-aligned ZnO nanowires on lithium niobate based micro devices.

  9. Direct synthesis of vertically aligned ZnO nanowires on FTO substrates using a CVD method and the improvement of photovoltaic performance

    PubMed Central

    2012-01-01

    In this work, we report a direct synthesis of vertically aligned ZnO nanowires on fluorine-doped tin oxide-coated substrates using the chemical vapor deposition (CVD) method. ZnO nanowires with a length of more than 30 μm were synthesized, and dye-sensitized solar cells (DSSCs) based on the as-grown nanowires were fabricated, which showed improvement of the device performance compared to those fabricated using transferred ZnO nanowires. Dependence of the cell performance on nanowire length and annealing temperature was also examined. This synthesis method provided a straightforward, one-step CVD process to grow relatively long ZnO nanowires and avoided subsequent nanowire transfer process, which simplified DSSC fabrication and improved cell performance. PMID:22673046

  10. Vertically Well-Aligned ZnO Nanowire Arrays Directly Synthesized from Zn Vapor Deposition Without Catalyst

    NASA Astrophysics Data System (ADS)

    Van Khai, Tran; Van Thu, Le; Huu, Nguyen The; Lam, Tran Dai

    2016-05-01

    Vertically well-aligned ZnO nanowire (NW) arrays with high density have been successfully synthesized on sapphire substrate by thermal evaporation of the zinc powders without catalysts or additives. The ZnO NWs were characterized by scanning electron microscopy, transmission electronic microscopy (TEM), x-ray diffraction, ultraviolet-visible, photoluminescence, Raman, and x-ray photoelectron spectroscopy. The results showed that the obtained ZnO NWs had diameters in the range of 100-130 nm, lengths over several micrometers and well aligned in the direction perpendicular to the substrate surface. The as-synthesized ZnO NWs, which were single crystalline in a hexagonal structure, showed uniform morphology, faceted planes at the tips of the NWs, and grown along the [001] direction. The as-synthesized NW arrays had a good crystal quality with excellent optical properties, showing a sharp and strong ultraviolet emission at 380 nm and a weak visible emission at around 500 nm.

  11. Low-temperature growth of well-aligned ZnO nanorods/nanowires on flexible graphite sheet and their photoluminescence properties

    SciTech Connect

    Zhong, Guo; Kalam, Abul; Al-Shihri, Ayed Sad; Su, Qingmei; Li, Jie; Du, Gaohui

    2012-06-15

    Highlights: ► Well-aligned ZnO nanostructures were grown on flexible graphite sheets at 500–650 °C. ► ZnO nanostructures are formed via self-catalytic vapor–solid process assisted by immiscibility of ZnO with graphite. ► The ZnO nanostructures show intensive green emission. ► The photoluminescence property can be easily tuned by changing growth condition or annealing treatment. -- Abstract: We have grown large-scale well-aligned ZnO nanorods/nanowires on commercial flexible graphite sheet (FGS) at low temperature via chemical vapor deposition method. The products were characterized by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. The effects of the growth temperature and oxygen flow rate on the morphology of ZnO nanostructures have been investigated. The growth mechanism of ZnO is found to be a self-catalytic vapor–solid process assisted by the immiscibility of ZnO with graphite. The as-grown ZnO/FGS products show strong green emission and their photoluminescence properties can be tuned by changing growth condition or annealing treatment.

  12. Large-scale fabrication of vertically aligned ZnO nanowire arrays

    DOEpatents

    Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

    2013-02-05

    In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

  13. Use of distributed Bragg reflectors to enhance Fabry-Pérot lasing in vertically aligned ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Kong, Jieying; Chu, Sheng; Huang, Jian; Olmedo, Mario; Zhou, Weihang; Zhang, Long; Chen, Zhanghai; Liu, Jianlin

    2013-01-01

    An optically pumped ZnO nanowire laser with a 10-period SiO2/SiN x distributed Bragg reflector (DBR) was demonstrated. Stimulated emissions with equally distributed Fabry-Pérot lasing modes were observed at pumping powers larger than 121 kW/cm2. This result, when compared to nanowires of the same length and without a DBR structure, shows that a lower threshold of pumping power, higher quality factor, and larger cavity finesse can be achieved due to the high reflectivity of the DBR in the designed wavelength range. A coexistence of stimulated and spontaneous emissions was also observed above threshold and was attributed to partially confined waveguide modes in nanowires with diameters smaller than 100 nm.

  14. Large-scale fabrication of vertically aligned ZnO nanowire arrays

    DOEpatents

    Wang, Zhong Lin; Hu, Youfan; Zhang, Yan; Xu, Chen; Zhu, Guang

    2014-09-09

    A generator includes a substrate, a first electrode layer, a dense plurality of vertically-aligned piezoelectric elongated nanostructures, an insulating layer and a second electrode layer. The substrate has a top surface and the first electrode layer is disposed on the top surface of the substrate. The dense plurality of vertically-aligned piezoelectric elongated nanostructures extends from the first electrode layer. Each of the nanostructures has a top end. The insulating layer is disposed on the top ends of the nanostructures. The second electrode layer is disposed on the non-conductive layer and is spaced apart from the nanostructures.

  15. Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates.

    PubMed

    Yang, W Q; Dai, L; You, L P; Zhang, B R; Shen, B; Qin, G G

    2006-12-01

    Well-aligned ZnO nanowires have been synthesized vertically on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates, using a catalyst-free carbon thermal-reduction vapor phase deposition method for the first time. The as-synthesized nanowires are single crystalline wurtzite structure, and have a growth direction of [0001]. Each nanowire has a smooth surface, and uniform diameter along the growth direction. The average diameter and length of these nanowires are 120-150 nm, and 3-10 )m, respectively. We suggest that the growth mechanism follow a self-catalyzing growth model. Excitonic emission peaked around 385 nm dominates the room-temperature photoluminescence spectra of these nanowires. The room-temperature photoluminescence and Raman scattering spectra show that these nanowires have good optical quality with very less structural defects. PMID:17256330

  16. Liquid crystal alignment on zinc oxide nanowire arrays for LCDs applications.

    PubMed

    Chen, Mu-Zhe; Chen, Wei-Sheng; Jeng, Shie-Chang; Yang, Sheng-Hsiung; Chung, Yueh-Feng

    2013-12-01

    The zinc oxide (ZnO) nanowire arrays on the indium tin oxide (ITO) glass substrates were fabricated by using the two-step hydrothermal method. A high transmittance ~92% of ZnO nanowire arrays on ITO substrate in the visible region was obtained. It was observed that the liquid crystal (LC) directors were aligned vertically to the (ZnO) nanowire arrays. The properties of ZnO nanowire arrays as vertical liquid crystal (LC) alignment layers and their applications for hybrid-aligned nematic LC modes were investigated in this work. PMID:24514480

  17. Optical and electrical properties of p-type Li-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Sáaedi, Abdolhossein; Yousefi, Ramin; Jamali-Sheini, Farid; Cheraghizade, Mohsen; Khorsand Zak, A.; Huang, Nay Ming

    2013-09-01

    Undoped and Li-doped ZnO nanowires were grown on Si(1 1 1) substrates using a thermal evaporation method. Undoped and Li-doped ZnO nanoparticles, which were prepared using a sol-gel method, were used as material sources to grow the undoped and Li-doped ZnO nanowires, respectively. X-ray diffraction patterns clearly indicated hexagonal structures for all of the products. The nanowires were completely straight, with non-aligned arrays, and were tapered. Field emission Auger spectrometer indicated lithium element in the nanowires structures. Photoluminescence (PL) studies showed lower optical properties for the Li-doped ZnO nanowires compared to the undoped ZnO nanowires. Furthermore, the UV peak of the Li-doped ZnO nanowires was red-shifted compared to the undoped ZnO nanowires. Two probe method results proved that the Li-doped ZnO nanowires exhibited p-type properties.

  18. Growth of vertically aligned ZnO nanorods using textured ZnO films

    PubMed Central

    2011-01-01

    A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.) PMID:21899743

  19. Effect of Ga-doping on the properties of ZnO nanowire

    SciTech Connect

    Ishiyama, Takeshi Nakane, Takaya Fujii, Tsutomu

    2015-02-27

    Arrays of single-crystal zinc oxide (ZnO) nanowires have been synthesized on silicon substrates by vapor-liquid-solid growth techniques. The effect of growth conditions including substrate temperature and Ar gas flow rate on growth properties of ZnO nanowire arrays were studied. Structural and optical characterization was performed using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. SEM images of the ZnO nanowire arrays grown at various Ar gas flow rates indicated that the alignment and structural features of ZnO nanowires were affected by the gas flow rate. The PL of the ZnO nanowire arrays exhibited strong ultraviolet (UV) emission at 380 nm and green emission around 510 nm. Moreover, the green emission reduced in Ga-doped sample.

  20. Synthesis, optical and electrochemical properties of ZnO nanowires/graphene oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Zeng, Huidan; Cao, Ying; Xie, Shufan; Yang, Junhe; Tang, Zhihong; Wang, Xianying; Sun, Luyi

    2013-03-01

    Large-scale vertically aligned ZnO nanowires with high crystal qualities were fabricated on thin graphene oxide films via a low temperature hydrothermal method. Room temperature photoluminescence results show that the ultraviolet emission of nanowires grown on graphene oxide films was greatly enhanced and the defect-related visible emission was suppressed, which can be attributed to the improved crystal quality and possible electron transfer between ZnO and graphene oxide. Electrochemical property measurement results demonstrated that the ZnO nanowires/graphene oxide have large integral area of cyclic voltammetry loop, indicating that such heterostructure is promising for application in supercapacitors.

  1. Synthesis, optical and electrochemical properties of ZnO nanowires/graphene oxide heterostructures

    PubMed Central

    2013-01-01

    Large-scale vertically aligned ZnO nanowires with high crystal qualities were fabricated on thin graphene oxide films via a low temperature hydrothermal method. Room temperature photoluminescence results show that the ultraviolet emission of nanowires grown on graphene oxide films was greatly enhanced and the defect-related visible emission was suppressed, which can be attributed to the improved crystal quality and possible electron transfer between ZnO and graphene oxide. Electrochemical property measurement results demonstrated that the ZnO nanowires/graphene oxide have large integral area of cyclic voltammetry loop, indicating that such heterostructure is promising for application in supercapacitors. PMID:23522184

  2. Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

    PubMed

    Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G

    2015-07-27

    In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V. PMID:26367556

  3. Investigations on the growth and characterization of vertically aligned zinc oxide nanowires by radio frequency magnetronsputtering

    SciTech Connect

    Venkatesh, P. Sundara; Jeganathan, K.

    2013-04-15

    Undoped vertically aligned ZnO nanowires have been grown on silicon (111) substrates by the rf magnetron sputtering technique without metal catalyst. The diameter, length and density distributions of the nanowires have been analyzed with respect to the different growth durations. The tapering of the nanowires is observed for the growth duration of 120 min owing to the insufficient adatoms on the growth front. In the X-ray diffraction pattern, the dominant (002) peak with narrow full width at half maximum (FWHM) of ZnO nanowires indicates the c-axis orientation and high crystalline nature with hexagonal wurtzite crystal structure. The narrow FWHM of E{sub 2}{sup low} and E{sub 2}{sup high} phonon modes (1.4 and 9.1 cm{sup −1}) provide an additional evidence for the high crystalline and optical properties of the nanowires. The low temperature photoluminescence spectra are dominated by the green emission at∼2.28 eV induced by the electron transitions between shallow donor and acceptor energy levels. - Graphical abstract: Coalescence free vertically aligned ZnO nanowires have been grown on silicon (111) substrate by the radio frequency magnetron sputtering technique. Highlights: ► ZnO nanowires have been grown by rf magnetron sputtering. ► A morphologically superior and coalescence free ZnO nanowires have been realized. ► ZnO nanowires exhibit hexagonal wurtzite crystal structure. ► A dominant visible emission indicates the presence of point defects in nanowires.

  4. The nitridation of ZnO nanowires

    PubMed Central

    2012-01-01

    ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. These exhibited clear peaks in the X-ray diffraction corresponding to the hexagonal wurtzite crystal structure of ZnO and a photoluminescence spectrum with a peak at 3.3 eV corresponding to band edge emission close to 3.2 eV determined from the abrupt onset in the absorption-transmission through ZnO NWs grown on 0.5 nm Au/quartz. We find that the post growth nitridation of ZnO NWs under a steady flow of NH3 at temperatures ≤600°C promotes the formation of a ZnO/Zn3N2 core-shell structure as suggested by the suppression of the peaks related to ZnO and the emergence of new ones corresponding to the cubic crystal structure of Zn3N2 while maintaining their integrity. Higher temperatures lead to the complete elimination of the ZnO NWs. We discuss the effect of nitridation time, flow of NH3, ramp rate and hydrogen on the conversion and propose a mechanism for the nitridation. PMID:22397754

  5. A Novel Way for Synthesizing Phosphorus-Doped Zno Nanowires

    PubMed Central

    2011-01-01

    We developed a novel approach to synthesize phosphorus (P)-doped ZnO nanowires by directly decomposing zinc phosphate powder. The samples were demonstrated to be P-doped ZnO nanowires by using scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction spectra, X-ray photoelectron spectroscopy, energy dispersive spectrum, Raman spectra and photoluminescence measurements. The chemical state of P was investigated by electron energy loss spectroscopy (EELS) analyses in individual ZnO nanowires. P was found to substitute at oxygen sites (PO), with the presence of anti-site P on Zn sites (PZn). P-doped ZnO nanowires were high resistance and the related P-doping mechanism was discussed by combining EELS results with electrical measurements, structure characterization and photoluminescence measurements. Our method provides an efficient way of synthesizing P-doped ZnO nanowires and the results help to understand the P-doping mechanism.

  6. In-plane trapping and manipulation of ZnO nanowires by a hybrid plasmonic field.

    PubMed

    Zhang, Lichao; Dou, Xiujie; Min, Changjun; Zhang, Yuquan; Du, Luping; Xie, Zhenwei; Shen, Junfeng; Zeng, Yujia; Yuan, Xiaocong

    2016-05-14

    In general, when a semiconductor nanowire is trapped by conventional laser beam tweezers, it tends to be aligned with the trapping beam axis rather than confined in the horizontal plane, and this limits the application of these nanowires in many in-plane nanoscale optoelectronic devices. In this work, we achieve the in-plane trapping and manipulation of a single ZnO nanowire by a hybrid plasmonic tweezer system on a flat metal surface. The gap between the nanowire and the metallic substrate leads to an enhanced gradient force caused by deep subwavelength optical energy confinement. As a result, the nanowire can be securely trapped in-plane at the center of the excited surface plasmon polariton field, and can also be dynamically moved and rotated by varying the position and polarization direction of the incident laser beam, which cannot be performed using conventional optical tweezers. The theoretical results show that the focused plasmonic field induces a strong in-plane trapping force and a high rotational torque on the nanowire, while the focused optical field produces a vertical trapping force to produce the upright alignment of the nanowire; this is in good agreement with the experimental results. Finally, some typical ZnO nanowire structures are built based on this technique, which thus further confirms the potential of this method for precise manipulation of components during the production of nanoelectronic and nanophotonic devices. PMID:27117313

  7. Nonvolatile resistive switching in single crystalline ZnO nanowires.

    PubMed

    Yang, Yuchao; Zhang, Xiaoxian; Gao, Min; Zeng, Fei; Zhou, Weiya; Xie, Sishen; Pan, Feng

    2011-04-01

    We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface. Resistive memories based on bottom-up semiconductor nanowires hold potential for next generation ultra-dense nonvolatile memories. PMID:21394361

  8. Power generation from base excitation of a Kevlar composite beam with ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Hwang, Hyun-Sik; Sodano, Henry A.

    2015-04-01

    One-dimensional nanostructures such as nanowires, nanorods, and nanotubes with piezoelectric properties have gained interest in the fabrication of small scale power harvesting systems. However, the practical applications of the nanoscale materials in structures with true mechanical strengths have not yet been demonstrated. In this paper, piezoelectric ZnO nanowires are integrated into the fiber reinforced polymer composites serving as an active phase to convert the induced strain energy from ambient vibration into electrical energy. Arrays of ZnO nanowires are grown vertically aligned on aramid fibers through a low-cost hydrothermal process. The modified fabrics with ZnO nanowires whiskers are then placed between two carbon fabrics as the top and the bottom electrodes. Finally, vacuum resin transfer molding technique is utilized to fabricate these multiscale composites. The fabricated composites are subjected to a base excitation using a shaker to generate charge due to the direct piezoelectric effect of ZnO nanowires. Measuring the generated potential difference between the two electrodes showed the energy harvesting application of these multiscale composites in addition to their superior mechanical properties. These results propose a new generation of power harvesting systems with enhanced mechanical properties.

  9. High mobility ZnO nanowires for terahertz detection applications

    NASA Astrophysics Data System (ADS)

    Liu, Huiqiang; Peng, Rufang; Chu, Sheng; Chu, Shijin

    2014-07-01

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (˜0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  10. Development of multifunctional fiber reinforced polymer composites through ZnO nanowire arrays

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Patterson, Brendan A.; Hwang, Hyun-Sik; Sodano, Henry A.

    2016-04-01

    Piezoelectric nanowires, in particular zinc oxide (ZnO) nanowires, have been vastly used in the fabrication of electromechanical devices to convert wasted mechanical energy into useful electrical energy. Over recent years, the growth of vertically aligned ZnO nanowires on various structural fibers has led to the development of fiber-based nanostructured energy harvesting devices. However, the development of more realistic energy harvesters that are capable of continuous power generation requires a sufficient mechanical strength to withstand typical structural loading conditions. Yet, a durable, multifunctional material system has not been developed thoroughly enough to generate electrical power without deteriorating the mechanical performance. Here, a hybrid composite energy harvester is fabricated in a hierarchical design that provides both efficient power generating capabilities while enhancing the structural properties of the fiber reinforced polymer composite. Through a simple and low-cost process, a modified aramid fabric with vertically aligned ZnO nanowires grown on the fiber surface is embedded between woven carbon fabrics, which serve as the structural reinforcement as well as the top and the bottom electrodes of the nanowire arrays. The performance of the developed multifunctional composite is characterized through direct vibration excitation and tensile strength examination.

  11. Selective growth of ZnO nanowires on substrates patterned by photolithography and inkjet printing

    NASA Astrophysics Data System (ADS)

    Laurenti, M.; Verna, A.; Fontana, M.; Quaglio, M.; Porro, S.

    2014-05-01

    Zinc oxide nanowires (ZnO NWs) were grown by a two-step growth method, involving the deposition of a patterned ZnO thin seeding layer and the chemical vapor deposition (CVD) of ZnO NWs. Two ways of patterning the seed layer were performed. The seeding solution containing ZnO precursors was deposited by sol-gel/spin-coating technique and patterned by photolithography. In the other case, the seeding solution was directly printed by inkjet printing only on selected portion of the substrate areas. In both cases, crystallization of the seed layer was achieved by thermal annealing in ambient air. Vertically aligned ZnO NWs were then grown by CVD on patterned, seeded substrates. The structure and morphology of ZnO NWs was analyzed by means of X-ray diffraction and field emission scanning electron microscopy measurements, respectively, while the vibrational properties were evaluated through Raman spectroscopy. Results showed that less-defective, vertically aligned, c-axis oriented ZnO NWs were grown on substrates patterned by photolithography while more defective nanostructures were grown on printed seed layer. A feature size of 30 µm was transferred into the patterned seed layer, and a good selectivity in growing ZnO NWs was obtained.

  12. Fluorescent security markers on ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Warren, Kristy; Tzolov, Marian

    2012-02-01

    Zink oxide is an efficient emitter of light thanks to the large exciton binding energy of 60 meV. The narrow emission lines from ZnO nanowires can be used as an enhanced security feature in documents and can be easily recognized from the background originating from the paper itself. We have studied the emission properties of ZnO nanowires in the UV range and how they can be implemented into paper products for document security. The zinc oxide nanowires were synthesized by chemical vapor transport and postprocessed in solution. The nanowires were dispersed using a sonicator into nitric acid water solutions with a pH of 2 and 4, and ammonium hydroxide water solution with a pH of 5 and 7. The morphology of the dispersed ZnO nanowires was imaged under a scanning electron microscope. Fluorescence measurements have shown better light emission from the nanoparticles dispersed in the basic pH solution. This material was then implemented into crafted paper and viewed under UV lamps and with a spectrometer. We have studied the loading of the paper with ZnO nanoparticles. A comparison was done with equivalently processed material of ZnO in powder form. The implementation of zinc oxide nanowires into paper products can advance document security at a relatively low cost.

  13. Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

    SciTech Connect

    Chung, T. F.; Luo, L. B.; He, Z. B.; Leung, Y. H.; Shafiq, I.; Yao, Z. Q.; Lee, S. T.

    2007-12-03

    Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

  14. ZnO Nanoparticles and Nanowire Arrays with Liquid Crystals for Photovoltaic Apprications

    NASA Astrophysics Data System (ADS)

    Salamanca-Riba, Lourdes; Weadock, Nicholas; Martinez-Miranda, Luz

    2011-03-01

    Liquid crystals are small monodisperse molecules with high mobilities and are easy and cheap to process. In addition, some of their phases exhibit molecular orientation that can provide a path for the electrons, or holes, to move from one electrode to the other. We have mixed a smectic A liquid crystal (8CB) with varying concentrations of ZnO nanoparticles of ~ 5 nm in diameter and have observed a photovoltaic effect as a function of the concentration of ZnO. The liquid crystal is believed to enhance the alignment of the nanoparticles and aid in the diffusion of electrons through the particles to the collection electrode. We have also made PV cells of ZnO nanowire arrays grown on Au layers on Si substrates. The nanowire arrays are covered with 8CB liquid crystal for hole conduction. We compare the light absorption of the PV cells as a function of wavelength of the light for the ZnO nanoparticle and the ZnO nanowire cells. We present a detailed study of the structure of the two systems. Supported by the National Science Foundation under the University of Maryland MRSEC DMR 0520471.

  15. Vertically aligned zinc oxide nanowires electrodeposited within porous polycarbonate templates for vibrational energy harvesting

    NASA Astrophysics Data System (ADS)

    Boughey, Francesca L.; Davies, Timothy; Datta, Anuja; Whiter, Richard A.; Sahonta, Suman-Lata; Kar-Narayan, Sohini

    2016-07-01

    A piezoelectric nanogenerator has been fabricated using a simple, fast and scalable template-assisted electrodeposition process, by which vertically aligned zinc oxide (ZnO) nanowires were directly grown within a nanoporous polycarbonate (PC) template. The nanowires, having average diameter 184 nm and length 12 μm, are polycrystalline and have a preferred orientation of the [100] axis parallel to the long axis. The output power density of a nanogenerator fabricated from the as-grown ZnO nanowires still embedded within the PC template was found to be 151 ± 25 mW m‑3 at an impedance-matched load, when subjected to a low-level periodic (5 Hz) impacting force akin to gentle finger tapping. An energy conversion efficiency of ∼4.2% was evaluated for the electrodeposited ZnO nanowires, and the ZnO–PC composite nanogenerator was found to maintain good energy harvesting performance through 24 h of continuous fatigue testing. This is particularly significant given that ZnO-based nanostructures typically suffer from mechanical and/or environmental degradation that otherwise limits their applicability in vibrational energy harvesting. Our template-assisted synthesis of ZnO nanowires embedded within a protective polymer matrix through a single growth process is thus attractive for the fabrication of low-cost, robust and stable nanogenerators.

  16. Vertically aligned zinc oxide nanowires electrodeposited within porous polycarbonate templates for vibrational energy harvesting.

    PubMed

    Boughey, Francesca L; Davies, Timothy; Datta, Anuja; Whiter, Richard A; Sahonta, Suman-Lata; Kar-Narayan, Sohini

    2016-07-15

    A piezoelectric nanogenerator has been fabricated using a simple, fast and scalable template-assisted electrodeposition process, by which vertically aligned zinc oxide (ZnO) nanowires were directly grown within a nanoporous polycarbonate (PC) template. The nanowires, having average diameter 184 nm and length 12 μm, are polycrystalline and have a preferred orientation of the [100] axis parallel to the long axis. The output power density of a nanogenerator fabricated from the as-grown ZnO nanowires still embedded within the PC template was found to be 151 ± 25 mW m(-3) at an impedance-matched load, when subjected to a low-level periodic (5 Hz) impacting force akin to gentle finger tapping. An energy conversion efficiency of ∼4.2% was evaluated for the electrodeposited ZnO nanowires, and the ZnO-PC composite nanogenerator was found to maintain good energy harvesting performance through 24 h of continuous fatigue testing. This is particularly significant given that ZnO-based nanostructures typically suffer from mechanical and/or environmental degradation that otherwise limits their applicability in vibrational energy harvesting. Our template-assisted synthesis of ZnO nanowires embedded within a protective polymer matrix through a single growth process is thus attractive for the fabrication of low-cost, robust and stable nanogenerators. PMID:27256619

  17. Flexible Dye-Sensitized Solar Cell based on Vertical ZnO Nanowire Arrays

    SciTech Connect

    Chu, Sheng; Li, Dongdong; Chang, Pai-Chun; Lu, Jia Grace

    2010-09-26

    Flexible dye-sensitized solar cells are fabricated using vertically aligned ZnO nanowire arrays that are transferred onto ITO-coated poly(ethylene terephthalate) substrates using a simple peel-off process. The solar cells demonstrate an energy conversion efficiency of 0.44% with good bending tolerance. This technique paves a new route for building large-scale cost-effective flexible photovoltaic and optoelectronic devices.

  18. In-plane trapping and manipulation of ZnO nanowires by a hybrid plasmonic field

    NASA Astrophysics Data System (ADS)

    Zhang, Lichao; Dou, Xiujie; Min, Changjun; Zhang, Yuquan; Du, Luping; Xie, Zhenwei; Shen, Junfeng; Zeng, Yujia; Yuan, Xiaocong

    2016-05-01

    In general, when a semiconductor nanowire is trapped by conventional laser beam tweezers, it tends to be aligned with the trapping beam axis rather than confined in the horizontal plane, and this limits the application of these nanowires in many in-plane nanoscale optoelectronic devices. In this work, we achieve the in-plane trapping and manipulation of a single ZnO nanowire by a hybrid plasmonic tweezer system on a flat metal surface. The gap between the nanowire and the metallic substrate leads to an enhanced gradient force caused by deep subwavelength optical energy confinement. As a result, the nanowire can be securely trapped in-plane at the center of the excited surface plasmon polariton field, and can also be dynamically moved and rotated by varying the position and polarization direction of the incident laser beam, which cannot be performed using conventional optical tweezers. The theoretical results show that the focused plasmonic field induces a strong in-plane trapping force and a high rotational torque on the nanowire, while the focused optical field produces a vertical trapping force to produce the upright alignment of the nanowire; this is in good agreement with the experimental results. Finally, some typical ZnO nanowire structures are built based on this technique, which thus further confirms the potential of this method for precise manipulation of components during the production of nanoelectronic and nanophotonic devices.In general, when a semiconductor nanowire is trapped by conventional laser beam tweezers, it tends to be aligned with the trapping beam axis rather than confined in the horizontal plane, and this limits the application of these nanowires in many in-plane nanoscale optoelectronic devices. In this work, we achieve the in-plane trapping and manipulation of a single ZnO nanowire by a hybrid plasmonic tweezer system on a flat metal surface. The gap between the nanowire and the metallic substrate leads to an enhanced gradient force

  19. Gold as an intruder in ZnO nanowires.

    PubMed

    Méndez-Reyes, José M; Monroy, B Marel; Bizarro, Monserrat; Güell, Frank; Martínez, Ana; Ramos, Estrella

    2015-09-01

    Several techniques for obtaining ZnO nanowires (ZnO NWs) have been reported in the literature. In particular, vapour-liquid-solid (VLS) with Au as a catalyst is widely used. During this process, Au impurities in the ZnO NWs can be incorporated accidentally, and for this reason we named these impurities as intruders. It is thought that these intruders may produce interesting alterations in the electronic characteristics of nanowires. In the experiment, it is not easy to detect either Au atoms in these nanowires, or the modification that intruders produce in different electrical, optical and other properties. For this reason, in this density functional theory investigation, the effect of Au intruders on ZnO NWs is analysed. Au extended (thread) and point defects (atoms replacing Zn or O, or Au interstitials) are used to simulate the presence of gold atoms. Optimised geometries, band-gaps and density of states indicate that the presence of small amounts of Au drastically modifies the electronic states of ZnO NWs. The results reported here clearly indicate that small amounts of Au have a strong impact on the electronic properties of ZnO NWs, introducing states in the band edges that may promote transitions in the visible spectral region. The presence of Au as an intruder in ZnO NWs enhances the potential use of this system for photonic and photovoltaic applications. PMID:26219752

  20. Homoepitaxial regrowth habits of ZnO nanowire arrays

    PubMed Central

    2011-01-01

    Synthetic regrowth of ZnO nanowires [NWs] under a similar chemical vapor transport and condensation [CVTC] process can produce abundant ZnO nanostructures which are not possible by a single CVTC step. In this work, we report three different regrowth modes of ZnO NWs: axial growth, radial growth, and both directions. The different growth modes seem to be determined by the properties of initial ZnO NW templates. By varying the growth parameters in the first-step CVTC process, ZnO nanostructures (e.g., nanoantenna) with drastically different morphologies can be obtained with distinct photoluminescence properties. The results have implications in guiding the rational synthesis of various ZnO NW heterostructures. PMID:22151820

  1. Noise in ZnO nanowire field effect transistors.

    PubMed

    Xiong, Hao D; Wang, Wenyong; Suehle, John S; Richter, Curt A; Hong, Woong-Ki; Lee, Takhee

    2009-02-01

    The noise power spectra in ZnO nanowire field effect transistors (FETs) were experimentally investigated and showed a classical 1/f dependence. A Hooge's constant of 5 x 10(-3) was estimated. This value is within the range reported for CMOS FETs with high-k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O2 environment displayed elevated noise levels compared to in vacuum. At low temperature, random telegraph signals are observed in the drain current. PMID:19441450

  2. ZnO nanowire-based CO sensor

    NASA Astrophysics Data System (ADS)

    Ho, Mon-Shu; Chen, Wei-Hao; Chen, Yu-Lin; Chang, Meng-Fan

    This study applied ZnO nanowires to the fabrication of a CO gas sensor operable at room temperature. Following the deposition of a seed layer by spin coating, an aqueous solution method was used to grow ZnO nanowires. This was followed by the self-assembly of an electrode array via dielectrophoresis prior to the fabrication of the CO sensing device. The material characteristics were analyzed using FE-SEM, EDS, GIXRD, FE-TEM, and the measurement of photoluminescence (PL). Our results identified the ZnO nanowires as a single crystalline wurtzite structure. Extending the growth period from 30 min to 360 min led to an increase in the length and diameter of the nanowires. After two hours, the ZnO presented a preferred crystal orientation of [002]. Sensor chips were assembled using 60 pairs of electrodes with gaps of 2 μm, over which were lain nanowires to complete the sensing devices. The average sensing response was 48.37 s and the average recovery time was 65.61 s, with a sensing response magnitude of approximately 6.8% at room temperature.

  3. Synthesis and characterization of ZnO nanowires for nanosensor applications

    SciTech Connect

    Lupan, O.; Emelchenko, G.A.; Ursaki, V.V.; Chai, G.; Redkin, A.N.; Gruzintsev, A.N.; Tiginyanu, I.M.; Chow, L.; Ono, L.K.; and others

    2010-08-15

    In this paper we report the synthesis of ZnO nanowires via chemical vapor deposition (CVD) at 650 {sup o}C. It will be shown that these nanowires are suitable for sensing applications. ZnO nanowires were grown with diameters ranging from 50 to 200 nm depending on the substrate position in a CVD synthesis reactor and the growth regimes. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman spectroscopy (RS) have been used to characterize the ZnO nanowires. To investigate the suitability of the CVD synthesized ZnO nanowires for gas sensing applications, a single ZnO nanowire device (50 nm in diameter) was fabricated using a focused ion beam (FIB). The response to H{sub 2} of a gas nanosensor based on an individual ZnO nanowire is also reported.

  4. Structural, mechanical, and electronic properties of ultrathin ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Wang, Baolin; Zhao, Jijun; Jia, Jianming; Shi, Daning; Wan, Jianguo; Wang, Guanghou

    2008-07-01

    We report a structural transformation between the regular wurtzite and the unbuckled wurtzite (hexagonal) structure for ultrathin single-crystalline [0001] ZnO nanowires under uniaxial elongation and compression. Our density functional calculations show that hexagonal structure corresponds to a distinct minimum on the transformation path. Young's moduli of the ZnO nanowires with the hexagonal structures are larger than those with the wurtzite structures at the same size. Within the nanowire size range considered, Young's moduli of the ZnO nanowires decrease with increasing wire diameter. The electronic properties of these two types of ZnO nanowires exhibit distinctly different behaviors.

  5. In situ probing electrical response on bending of ZnO nanowires inside transmission electron microscope

    NASA Astrophysics Data System (ADS)

    Liu, K. H.; Gao, P.; Xu, Z.; Bai, X. D.; Wang, E. G.

    2008-05-01

    In situ electrical transport measurements on individual bent ZnO nanowires have been performed inside a high-resolution transmission electron microscope, where the crystal structures of ZnO nanowires were simultaneously imaged. A series of consecutively recorded current-voltage (I-V) curves along with an increase in nanowire bending show the striking effect of bending on their electrical behavior. The bending-induced changes of resistivity, electron concentration, and carrier mobility of ZnO nanowires have been retrieved based on the experimental I-V data, which suggests the applications of ZnO nanowires as nanoelectromechanical sensors.

  6. Co doped ZnO nanowires as visible light photocatalysts

    NASA Astrophysics Data System (ADS)

    Šutka, Andris; Käämbre, Tanel; Pärna, Rainer; Juhnevica, Inna; Maiorov, Mihael; Joost, Urmas; Kisand, Vambola

    2016-06-01

    High aspect ratio cobalt doped ZnO nanowires showing strong photocatalytic activity and moderate ferromagnetic behaviour were successfully synthesized using a solvothermal method and characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), vibrating sample magnetometry (VSM) and UV-visible absorption spectroscopy. The photocatalytic activities evaluated for visible light driven degradation of an aqueous methylene orange (MO) solution were higher than for Co doped ZnO nanoparticles at the same doping level and synthesized by the same synthesis route. The rate constant for MO visible light photocatalytic degradation was 1.9·10-3 min-1 in case of nanoparticles and 4.2·10-3 min-1 in case of nanowires. We observe strongly enhanced visible light photocatalytic activity for moderate Co doping levels, with an optimum at a composition of Zn0.95Co0.05O. The enhanced photocatalytic activities of Co doped ZnO nanowires were attributed to the combined effects of enhanced visible light absorption at the Co sites in ZnO nanowires, and improved separation efficiency of photogenerated charge carriers at optimal Co doping.

  7. Buffer layer effect on ZnO nanorods growth alignment

    NASA Astrophysics Data System (ADS)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal; Ma, Jiangang; Liu, Yichun; Shen, Dezhen

    2005-06-01

    Vertical aligned ZnO nanorods array was fabricated on Si with introducing a ZnO thin film as a buffer layer. Two different nucleation mechanisms were found in growth process. With using Au catalyst, Zn vapor could diffuse into Au nanoclusters with forming a solid solution. Then the ZnO nucleation site is mainly on the catalyst by oxidation of Au/Zn alloy. Without catalyst, nucleation could occur directly on the surface of buffer layer by homoepitaxy. The density and the size of ZnO nanorods could be governed by morphological character of catalyst and buffer layer. The nanorods growth is followed by vapor-solid mechanism.

  8. Oligo and Poly-thiophene/Zno Hybrid Nanowire Solar Cells

    SciTech Connect

    Briseno, Alejandro L.; Holcombe, Thomas W.; Boukai, Akram I.; Garnett, Erik C.; Shelton, Steve W.; Frechet, Jean J. M.; Yang, Peidong

    2009-11-03

    We demonstrate the basic operation of an organic/inorganic hybrid single nanowire solar cell. End-functionalized oligo- and polythiophenes were grafted onto ZnO nanowires to produce p-n heterojunction nanowires. The hybrid nanostructures were characterized via absorption and electron microscopy to determine the optoelectronic properties and to probe the morphology at the organic/inorganic interface. Individual nanowire solar cell devices exhibited well-resolved characteristics with efficiencies as high as 0.036percent, Jsc = 0.32 mA/cm2, Voc = 0.4 V, and a FF = 0.28 under AM 1.5 illumination with 100 mW/cm2 light intensity. These individual test structures will enable detailed analysis to be carried out in areas that have been difficult to study in bulk heterojunction devices.

  9. Role of Au in the growth and nanoscale optical properties of ZnO nanowires

    SciTech Connect

    Brewster, M.; Zhou, Xiang; Lim, S. K.; Gradecak, S.

    2011-03-17

    Metallic nanoparticles play a crucial role in nanowire growth and have profound consequences on nanowire morphology and their physical properties. Here, we investigate the evolving role of the Au nanoparticle during ZnO nanowire growth and its effects on nanoscale photoemission of the nanowires. We observe the transition from Au-assisted to non-assisted growth mechanisms during a single nanowire growth, with significant changes in growth rates during these two regimes. This transition occurs through the reduction of oxygen partial pressure, which modifies the ZnO facet stability and increases Au diffusion. Nanoscale quenching of ZnO cathodoluminescence occurs near the Au nanoparticle due to excited electron diffusion to the nanoparticle. Thus, the Au nanoparticle is critically linked to the nanowire growth mechanism and corresponding growth rate through the energy of its interface with the ZnO nanowire, and its presence modifies nanowire optical properties on the nanoscale.

  10. The growth of porous ZnO nanowires by thermal oxidation of ZnS nanowires.

    PubMed

    Hung, Chih-Cheng; Lin, Wen-Tai; Wu, Kuen-Hsien

    2011-12-01

    The growth of porous ZnO nanowires (NWs) via phase transformation of ZnS NWs at 500-850 degrees C in air was studied. The ZnS NWs were first synthesized by thermal evaporation of ZnS powder at 1100 degrees C in Ar. On subsequent annealing at 500 degrees C in air, discrete ZnO epilayers formed on the surface of ZnS NWs. At 600 degrees C, polycrystalline ZnO and the crack along the (0001) interface between the ZnO epilayer and ZnS NW were observed. At 700-750 degrees C ZnS NWs transformed to ZnO NWs, meanwhile nanopores and interfacial cracks were observed in the ZnO NWs. Two factors, the evaporation of SO2 and SO3 and the stress induced by the incompatible structure at the interface of ZnO epilayer and ZnS NW, can be responsible for the formation of porous ZnO NWs from ZnS NW templates on annealing at 700-750 degrees C in air. Rapid growth of ZnO at 850 degrees C could heal the pores and cracks and thus resulted in the well-crystallized ZnO NWs. PMID:22409083

  11. Localized ultraviolet photoresponse in single bent ZnO micro/nanowires

    SciTech Connect

    Guo Wen; Yang Ya; Qi Junjie; Zhao Jing; Zhang Yue

    2010-09-27

    The localized ultraviolet photoresponse in single bent ZnO micro/nanowires bridging two Ohmic contacts has been investigated. The ZnO micro/nanowire has a higher photoresponse sensitivity of about 190% at the bent region (bending strain: about 4%) than that at the straight region (about 50%). The rise and decay time constants are almost the same in the straight and bent regions of the ZnO micro/nanowire. A possible mechanism has been proposed and discussed. The bent ZnO micro/nanowires could be potentially useful for fabricating the coupled piezoelectric and optoelectronic nanodevices.

  12. Optical attenuation coefficient in individual ZnO nanowires.

    PubMed

    Little, Anree; Hoffman, Abigail; Haegel, Nancy M

    2013-03-11

    Attenuation coefficient measurements for the propagation of bandedge luminescence are made on individual ZnO nanowires by combining the localized excitation capability of a scanning electron microscope (SEM) with near-field scanning optical microscopy (NSOM) to record the distribution and intensity of wave-guided emission. Measurements were made for individual nanostructures with triangular cross-sections ranging in diameter from 680 to 2300 nm. The effective attenuation coefficient shows an inverse dependence on nanowire diameter (d(-1)), indicating scattering losses due to non-ideal waveguiding behavior. PMID:23482201

  13. Method of fabricating vertically aligned group III-V nanowires

    DOEpatents

    Wang, George T; Li, Qiming

    2014-11-25

    A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

  14. Template-Assisted Hydrothermal Growth of Aligned Zinc Oxide Nanowires for Piezoelectric Energy Harvesting Applications

    PubMed Central

    2016-01-01

    A flexible and robust piezoelectric nanogenerator (NG) based on a polymer-ceramic nanocomposite structure has been successfully fabricated via a cost-effective and scalable template-assisted hydrothermal synthesis method. Vertically aligned arrays of dense and uniform zinc oxide (ZnO) nanowires (NWs) with high aspect ratio (diameter ∼250 nm, length ∼12 μm) were grown within nanoporous polycarbonate (PC) templates. The energy conversion efficiency was found to be ∼4.2%, which is comparable to previously reported values for ZnO NWs. The resulting NG is found to have excellent fatigue performance, being relatively immune to detrimental environmental factors and mechanical failure, as the constituent ZnO NWs remain embedded and protected inside the polymer matrix. PMID:27172933

  15. Template-Assisted Hydrothermal Growth of Aligned Zinc Oxide Nanowires for Piezoelectric Energy Harvesting Applications.

    PubMed

    Ou, Canlin; Sanchez-Jimenez, Pedro E; Datta, Anuja; Boughey, Francesca L; Whiter, Richard A; Sahonta, Suman-Lata; Kar-Narayan, Sohini

    2016-06-01

    A flexible and robust piezoelectric nanogenerator (NG) based on a polymer-ceramic nanocomposite structure has been successfully fabricated via a cost-effective and scalable template-assisted hydrothermal synthesis method. Vertically aligned arrays of dense and uniform zinc oxide (ZnO) nanowires (NWs) with high aspect ratio (diameter ∼250 nm, length ∼12 μm) were grown within nanoporous polycarbonate (PC) templates. The energy conversion efficiency was found to be ∼4.2%, which is comparable to previously reported values for ZnO NWs. The resulting NG is found to have excellent fatigue performance, being relatively immune to detrimental environmental factors and mechanical failure, as the constituent ZnO NWs remain embedded and protected inside the polymer matrix. PMID:27172933

  16. Thermal-electric model for piezoelectric ZnO nanowires.

    PubMed

    Araneo, Rodolfo; Bini, Fabiano; Rinaldi, Antonio; Notargiacomo, Andrea; Pea, Marialilia; Celozzi, Salvatore

    2015-07-01

    The behavior of ZnO nanowires under uniaxial loading is characterized by means of a numerical model that accounts for all coupled mechanical, electrical, and thermal effects. The paper shows that thermal effects in the nanowires may greatly impact the predicted performance of piezoelectric and piezotronic nanodevices. The pyroelectric effect introduces new equivalent volumic charge in the body of the nanowire and surface charges at the boundaries, where Kapitza resistances are located, that act together with the piezoelectric charges to improve the predicted performance. It is shown that the proposed model is able to reproduce several effects experimentally observed by other research groups, and is a promising tool for the design of ultra-high efficient nanodevices. PMID:26059217

  17. Highly Ordered Vertical Arrays of TiO2/ZnO Hybrid Nanowires: Synthesis and Electrochemical Characterization.

    PubMed

    Gujarati, Tanvi P; Ashish, Ajithan G; Rai, Maniratnam; Shaijumon, Manikoth M

    2015-08-01

    We report the fabrication of vertically aligned hierarchical arrays of TiO2/ZnO hybrid nanowires, consisting of ZnO nanowires grown directly from within the pores of TiO2 nanotubes, through a combination of electrochemical anodization and hydrothermal techniques. These novel nano-architectured hybrid nanowires with its unique properties show promise as high performance supercapacitor electrodes. The electrochemical behaviour of these hybrid nanowires has been studied using Cyclic voltammetry, Galvanostatic charge-discharge and Electrochemical impedance spectroscopy (EIS) measurements using 1.5 M tetraethylammoniumtetrafluoroborate in acetonitrile as the electrolyte. Excellent electrochemical performances with a maximum specific capacitance of 2.6 mF cm-2 at a current density of 10 µA cm-2, along with exceptional cyclic stability, have been obtained for TiO2/ZnO-1 h hybrid material. The obtained results demonstrate the possibility of fabricating new geometrical architectures of inorganic hybrid nanowires with well adhered interfaces for the development of hybrid energy devices. PMID:26369158

  18. Synthesis of ZnO nanowires and their applications as an ultraviolet photodetector.

    PubMed

    Lin, Chih-Cheng; Lin, Wang-Hua; Li, Yuan-Yao

    2009-05-01

    High purity ZnO nanowire arrays were synthesized uniformly on a 1.5 cm x 2 cm tin-doped indium oxide (ITO) glass substrate. The ZnO nanowire arrays were formed with a uniform diameter distribution of 30-50 nm and a length of about 5 microm, synthesized via thermal decomposition of zinc acetate at 300 degrees C in air. Analysis by X-ray diffraction and transmission electron microscopy showed that the ZnO nanowires are of single crystal structure with a preferred growth orientation of [001]. A study of the growth mechanism showed that it is a vapor-solid (VS) growth process. The synthesis of these nanowires begins with the processes of dehydration, vaporization, decomposition, and oxidation of the zinc acetate. Next, the ZnO clusters are deposited to form seeds that give rise to selective epitaxial growth of the ZnO nanowires. Optical analysis of ZnO nanowires was performed by UV-visible and fluorescence spectrophotometry, investigating both the photocurrent characteristics and UV photoresponse of the ZnO nanowire photodetectors. A study of optical properties showed that the as-produced ZnO nanowires have great potential as UV photodetectors/sensors. PMID:19452935

  19. Angle-dependent photodegradation over ZnO nanowire arrays on flexible paper substrates.

    PubMed

    Lu, Ming-Yen; Tseng, Yen-Ti; Chiu, Cheng-Yao

    2014-01-01

    In this study, we grew zinc oxide (ZnO) nanowire arrays on paper substrates using a two-step growth strategy. In the first step, we formed single-crystalline ZnO nanoparticles of uniform size distribution (ca. 4 nm) as seeds for the hydrothermal growth of the ZnO nanowire arrays. After spin-coating of these seeds onto paper, we grew ZnO nanowire arrays conformally on these substrates. The crystal structure of a ZnO nanowire revealed that the nanowires were single-crystalline and had grown along the c axis. Further visualization through annular bright field scanning transmission electron microscopy revealed that the hydrothermally grown ZnO nanowires possessed Zn polarity. From photocatalytic activity measurements of the ZnO nanowire (NW) arrays on paper substrate, we extracted rate constants of 0.415, 0.244, 0.195, and 0.08 s(-1) for the degradation of methylene blue at incident angles of 0°, 30°, 60°, and 75°, respectively; that is, the photocatalytic activity of these ZnO nanowire arrays was related to the cosine of the incident angle of the UV light. Accordingly, these materials have promising applications in the design of sterilization systems and light-harvesting devices. PMID:25593556

  20. Black-colored ZnO nanowires with enhanced photocatalytic hydrogen evolution

    NASA Astrophysics Data System (ADS)

    Zhang, Nan; Shan, Chong-Xin; Tan, Hua-Qiao; Zhao, Qi; Wang, Shuang-Peng; Sun, Zai-Cheng; Xia, Yong-de; Shen, De-Zhen

    2016-06-01

    Black-colored ZnO nanowires have been prepared in a metal–organic chemical vapor deposition system by employing a relatively low growth temperature and oxygen-deficient conditions. X-ray photoelectron spectroscopy reveals the incorporation of carbon into the nanowires. The photocatalytic hydrogen evolution activity of the black-colored ZnO nanowires is over 2.5 times larger than that of the pristine ZnO nanowires under simulated solar illumination conditions, and the enhanced photocatalytic activity can be attributed to the higher absorption of visible light by the black color and better carrier separation at the ZnO/carbon interface.

  1. Black-colored ZnO nanowires with enhanced photocatalytic hydrogen evolution.

    PubMed

    Zhang, Nan; Shan, Chong-Xin; Tan, Hua-Qiao; Zhao, Qi; Wang, Shuang-Peng; Sun, Zai-Cheng; Xia, Yong-de; Shen, De-Zhen

    2016-06-01

    Black-colored ZnO nanowires have been prepared in a metal-organic chemical vapor deposition system by employing a relatively low growth temperature and oxygen-deficient conditions. X-ray photoelectron spectroscopy reveals the incorporation of carbon into the nanowires. The photocatalytic hydrogen evolution activity of the black-colored ZnO nanowires is over 2.5 times larger than that of the pristine ZnO nanowires under simulated solar illumination conditions, and the enhanced photocatalytic activity can be attributed to the higher absorption of visible light by the black color and better carrier separation at the ZnO/carbon interface. PMID:27109699

  2. Effect of Intrinsic Point Defect on the Magnetic Properties of ZnO Nanowire

    PubMed Central

    Yun, Jiangni; Zhang, Zhiyong; Yin, Tieen

    2013-01-01

    The effect of intrinsic point defect on the magnetic properties of ZnO nanowire is investigated by the first-principles calculation based on the density functional theory (DFT). The calculated results reveal that the pure ZnO nanowire without intrinsic point defect is nonmagnetic and ZnO nanowire with VO, Zni, Oi, OZn, or ZnO point defect also is nonmagnetic. However, a strong spin splitting phenomenon is observed in ZnO nanowire with VZn defect sitting on the surface site. The Mulliken population analysis reveals that the oxygen atoms which are close to the VZn defect do major contribution to the magnetic moment. Partial density states calculation further suggests that the appearance of the half-metallic ferromagnetism in ZnO nanorod with VZn originates from the hybridization of the O2p states with Zn 3d states. PMID:24396300

  3. Attachment-driven morphology evolvement of rectangular ZnO nanowires.

    PubMed

    Zhang, Dong-Feng; Sun, Ling-Dong; Yin, Jia-Lu; Yan, Chun-Hua; Wang, Rong-Ming

    2005-05-12

    The rectangular cross-sectional ZnO nanowires were synthesized in a solution method. An attachment-driven growth mechanism was proposed for the morphology evolvement of ZnO nanocrystals from nanoparticles to nanoplates and eventually to nanowires. Due to the pileup attachment of the nanoplates to recrystallize into nanowires, unique one-dimensional (1D) ZnO nanowires with the rectangular cross section were obtained, which is different from those nanowires in the previous reports. It is the first time the evidence that "oriented attachment" can occur not only for nanoparticles but also for nanoplates was obtained, suggesting that "oriented attachment" is an intrinsic behavior for nanosized materials. According to the growth model proposed based on the direct TEM observations, ZnO nanocrystals can be easily controlled as nanoparticles, nanoplates, or nanowires by tuning the synthetic parameters. PMID:16852043

  4. Site-specific growth of ZnO nanowires from patterned Zn via compatible semiconductor processing

    NASA Astrophysics Data System (ADS)

    Law, J. B. K.; Boothroyd, C. B.; Thong, J. T. L.

    2008-05-01

    An alternative method for site-selective growth of ZnO nanowires without the use of an Au catalyst or a ZnO thin-film seed layer is presented. Using conventional lithography and metallization semiconductor processing steps, regions for selective nanowire growth are defined using Zn, which acts as a self-catalyst for subsequent ZnO nanowire growth via a simple thermal oxidation process. Scanning electron microscopy, transmission electron microscopy and X-ray diffraction reveal that the nanowires grown by this technique are single-crystalline wurtzite ZnO. Room temperature photoluminescence exhibits strong ultraviolet emission from these nanowires, indicating good optical properties. A series of experiments was conducted to elucidate the unique growth behavior of these nanowires directly from the Zn grains and a growth model is proposed.

  5. Efficient nitrogen incorporation in ZnO nanowires

    PubMed Central

    Stehr, Jan E.; Chen, Weimin M.; Reddy, Nandanapalli Koteeswara; Tu, Charles W.; Buyanova, Irina A.

    2015-01-01

    One-dimensional ZnO nanowires (NWs) are a promising materials system for a variety of applications. Utilization of ZnO, however, requires a good understanding and control of material properties that are largely affected by intrinsic defects and contaminants. In this work we provide experimental evidence for unintentional incorporation of nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance spectroscopy. The incorporated nitrogen atoms are concluded to mainly reside at oxygen sites (NO). The NO centers are suggested to be located in proximity to the NW surface, based on their reduced optical ionization energy as compared with that in bulk. This implies a lower defect formation energy at the NW surface as compared with its bulk value, consistent with theoretical predictions. The revealed facilitated incorporation of nitrogen in ZnO nanostructures may be advantageous for realizing p-type conducting ZnO via N doping. The awareness of this process can also help to prevent such unintentional doping in structures with desired n-type conductivity. PMID:26299157

  6. Efficient nitrogen incorporation in ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Stehr, Jan E.; Chen, Weimin M.; Reddy, Nandanapalli Koteeswara; Tu, Charles W.; Buyanova, Irina A.

    2015-08-01

    One-dimensional ZnO nanowires (NWs) are a promising materials system for a variety of applications. Utilization of ZnO, however, requires a good understanding and control of material properties that are largely affected by intrinsic defects and contaminants. In this work we provide experimental evidence for unintentional incorporation of nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance spectroscopy. The incorporated nitrogen atoms are concluded to mainly reside at oxygen sites (NO). The NO centers are suggested to be located in proximity to the NW surface, based on their reduced optical ionization energy as compared with that in bulk. This implies a lower defect formation energy at the NW surface as compared with its bulk value, consistent with theoretical predictions. The revealed facilitated incorporation of nitrogen in ZnO nanostructures may be advantageous for realizing p-type conducting ZnO via N doping. The awareness of this process can also help to prevent such unintentional doping in structures with desired n-type conductivity.

  7. Excitonic effects in ZnO nanowires and hollow nanotubes

    NASA Astrophysics Data System (ADS)

    Willander, M.; Lozovik, Y. E.; Zhao, Q. X.; Nur, O.; Hu, Q.-H.; Klason, P.

    2007-02-01

    Energy levels and wave functions of ground and excited states of an exciton are calculated by the method of imaginary time. Energy levels as functions of radius of single and double wall nanotube are studied. Asymptotic behavior of energy levels at large and small values of the radius using perturbation theory and adiabatic approximation is considered. Spatially indirect exciton in semiconductor nanowire is also investigated. Experimental result from high quality reproducible ZnO nanowires grown by low temperature chemical engineering is presented. State of the art high brightness white light emitting diodes (HB-LEDs) are demonstrated from the grown ZnO nano-wires. The color temperature and color rendering index (CRI) of the HB-LEDs values was found to be (3250 K, 82), and (14000 K, 93), for the best LEDs, which means that the quality of light is superior to one obtained from GaN LEDs available on the market today. The role of V Zn and V ° on the emission responsible for the white light band as well as the peak position of this important wide band is thoroughly investigated in a systematic way.

  8. Spatially controlled growth of highly crystalline ZnO nanowires by an inkjet-printing catalyst-free method

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Khachadorian, Sevak; Zamani, Reza R.; Franke, Alexander; Hoffmann, Axel; Wagner, Markus R.; Santana, Guillermo

    2016-02-01

    High-density arrays of uniform ZnO nanowires with a high-crystal quality have been synthesized by a catalyst-free vapor-transport method. First, a thin ZnO film was deposited on a Si substrate as nucleation layer for the ZnO nanowires. Second, spatially selective and mask-less growth of ZnO nanowires was achieved using inkjet-printed patterned islands as the nucleation sites on a SiO2/Si substrate. Raman scattering and low temperature photoluminescence measurements were applied to characterize the structural and optical properties of the ZnO nanowires. The results reveal negligible amounts of strain and defects in the mask-less ZnO nanowires as compared to the ones grown on the ZnO thin film, which underlines the potential of the inkjet-printing approach for the growth of high-crystal quality ZnO nanowires.

  9. Energy harvesting from vertically aligned PZT nanowire arrays

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Zhou, Zhi; Sodano, Henry A.

    2016-04-01

    In this paper, a nanostructured piezoelectric beam is fabricated using vertically aligned lead zirconate titanate (PZT) nanowire arrays and its capability of continuous power generation is demonstrated through direct vibration tests. The lead zirconate titanate nanowires are grown on a PZT thin film coated titanium foil using a hydrothermal reaction. The PZT thin film serves as a nucleation site while the titanium foil is used as the bottom electrode. Electromechanical frequency response function (FRF) analysis is performed to evaluate the power harvesting efficiency of the fabricated device. Furthermore, the feasibility of the continuous power generation using the nanostructured beam is demonstrated through measuring output voltage from PZT nanowires when beam is subjected to a sinusoidal base excitation. The effect of tip mass on the voltage generation of the PZT nanowire arrays is evaluated experimentally. The final results show the great potential of synthesized piezoelectric nanowire arrays in a wide range of applications, specifically power generation at nanoscale.

  10. Optical modulation of persistent photoconductivity in ZnO nanowires

    SciTech Connect

    Wang Yao; Liao Zhaoliang; Chen Dongmin; She Guangwei; Mu Lixuan; Shi Wensheng

    2011-05-16

    In this study, ZnO nanowires (ZNWs)-based optoelectric devices are found to exhibit strong persistent photoconductivity (PPC) effect. An optical modulation on the PPC effect of the ZNWs with 980 nm infrared (IR) laser has been investigated. It was found that the decay time for the PPC can be significantly shortened by IR irradiation. The modulation mechanism related with the oxygen vacancies and the subband gap excitation is proposed. Based on this mechanism, the modulation behavior of the IR can be well explained. The present optical modulation on the PPC is suggested to have potential applications in enhancing the performance of ZnO-based photodetectors.

  11. Synthesis of Fe Doped ZnO Nanowire Arrays that Detect Formaldehyde Gas.

    PubMed

    Jeon, Yoo Sang; Seo, Hyo Won; Kim, Su Hyo; Kim, Young Keun

    2016-05-01

    Owing to their chemical and thermal stability and doping effects on providing electrons to the conduction band, doped ZnO nanowires have generated interest for use in electronic devices. Here we report hydrothermally grown Fe-doped ZnO nanowires and their gas-sensing properties. The synthesized nanowires have a high crystallinity and are 60 nm in diameter and 1.7 μm in length. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) are employed to understand the doping effects on the microstructures and gas sensing properties. When the Fe-doped ZnO nanowire arrays were evaluated for gas sensing, responses were recorded through changes in temperature and gas concentration. Gas sensors consisting of ZnO nanowires doped with 3-5 at.% Fe showed optimum formaldehyde (HCHO) sensing performance at each working temperature. PMID:27483827

  12. Towards high-performance, low-cost quartz sensors with high-density, well-separated, vertically aligned ZnO nanowires by low-temperature, seed-less, single-step, double-sided growth.

    PubMed

    Orsini, Andrea; Medaglia, Pier Gianni; Scarpellini, David; Pizzoferrato, Roberto; Falconi, Christian

    2013-09-01

    Resonant sensors with nanostructured surfaces have long been considered as an emergent platform for high-sensitivity transduction because of the potentially very large sensing areas. Nevertheless, until now only complex, time-consuming, expensive and sub-optimal fabrication procedures have been described; in fact, especially with reference to in-liquid applications, very few devices have been reported. Here, we first demonstrate that, by immersing standard, ultra-low-cost quartz resonators with un-polished silver electrodes in a conventional zinc nitrate/HMTA equimolar nutrient solution, the gentle contamination from the metallic package allows direct growth on the electrodes of arrays of high-density (up to 10 μm⁻²) and well-separated (no fusion at the roots) ZnO nanowires without any seed layer or thermal annealing. The combination of high-density and good separation is ideal for increasing the sensing area; moreover, this uniquely simple, single-step process is suitable for conventional, ultra-low-cost and high-frequency quartzes, and results in devices that are already packaged and ready to use. As an additional advantage, the process parameters can be effectively optimized by measuring the quartz admittance before and after growth. As a preliminary test, we show that the sensitivity to the liquid properties of high-frequency (i.e. high sensitivity) quartzes can be further increased by nearly one order of magnitude and thus show the highest ever reported frequency shifts of an admittance resonance in response to immersion in both ethanol and water. PMID:23924776

  13. Tribological characteristics of ZnO nanowires investigated by atomic force microscope

    NASA Astrophysics Data System (ADS)

    Chung, Koo-Hyun; Kim, Hyun-Joon; Lin, Li-Yu; Kim, Dae-Eun

    2008-08-01

    Zinc oxide (ZnO) nanowires have attracted great interest in nanodevices. In this work, the tribological characteristics of vertically grown ZnO nanowires obtained by metalorganic chemical vapor deposition were investigated by using an atomic force microscope (AFM). The ZnO nanowires were slid against flattened silicon and diamond-coated AFM probes under 50 150 nN normal force while monitoring the frictional force. The wear of the ZnO nanowires was observed by a scanning electron microscope and quantified based on Archard’s wear law. Also, the wear debris accumulated on the silicon probe was analyzed by using a transmission electron microscope (TEM). The results showed that the wear of ZnO nanowires slid against the silicon probe was extremely small. However, when the ZnO nanowires were slid against the diamond-coated probe, the wear coefficients ranged from 0.006 to 0.162, which correspond to the range of severe wear at the macroscale. It was also shown that the friction coefficient decreased from 0.30 to 0.25 as the sliding cycles increased. From TEM observation, it was found that the ZnO wear debris was mainly amorphous in structure. Also, crystalline ZnO nanoparticles were observed among the wear debris.

  14. Gate-tunable photocurrent in ZnO nanowires mediated by nanowire-substrate interface states

    NASA Astrophysics Data System (ADS)

    Yang, Liangliang; Wang, Qiaoming; Tao, Xin; Taylor, Shelby P.; Gu, Yi

    2015-03-01

    We report the observation of gate-tunable photocurrent in ZnO nanowires under optical excitation in the visible regime. Particularly, the photocurrent can be tuned by one order of magnitude with moderate changes in the backgate voltages (from -10 V to 10 V), and by more than two orders of magnitude within an extended range of the backgate voltage (several tens of volts). Using scanning photocurrent microscopy, single-nanowire photocurrent spectroscopy, and numerical calculations, we suggest that this gate tunability originates from the nanowire/substrate (Si3N4) interface states, where the electron occupation of these states and the excitation of electrons are controlled by the backgate voltage. This external gate tunability of the photocarrier generation facilitated by interface states provides an additional way to control photodetecting and photovoltaic properties, and this approach can also be extended to other nanostructures, such as two-dimensional semiconductors, where the surface effects are significant.

  15. Fabrication and characterization of hexagonally patterned quasi-1D ZnO nanowire arrays

    PubMed Central

    2014-01-01

    Quasi-one-dimensional (quasi-1D) ZnO nanowire arrays with hexagonal pattern have been successfully synthesized via the vapor transport process without any metal catalyst. By utilizing polystyrene microsphere self-assembled monolayer, sol–gel-derived ZnO thin films were used as the periodic nucleation sites for the growth of ZnO nanowires. High-quality quasi-1D ZnO nanowires were grown from nucleation sites, and the original hexagonal periodicity is well-preserved. According to the experimental results, the vapor transport solid condensation mechanism was proposed, in which the sol–gel-derived ZnO film acting as a seed layer for nucleation. This simple method provides a favorable way to form quasi-1D ZnO nanostructures applicable to diverse fields such as two-dimensional photonic crystal, nanolaser, sensor arrays, and other optoelectronic devices. PMID:24521308

  16. Growth of catalyst-free high-quality ZnO nanowires by thermal evaporation under air ambient

    PubMed Central

    2012-01-01

    ZnO nanowires have been successfully fabricated on Si substrate by simple thermal evaporation of Zn powder under air ambient without any catalyst. Morphology and structure analyses indicated that ZnO nanowires had high purity and perfect crystallinity. The diameter of ZnO nanowires was 40 to 100 nm, and the length was about several tens of micrometers. The prepared ZnO nanowires exhibited a hexagonal wurtzite crystal structure. The growth of the ZnO nanostructure was explained by the vapor-solid mechanism. The simplicity, low cost and fewer necessary apparatuses of the process would suit the high-throughput fabrication of ZnO nanowires. The ZnO nanowires fabricated on Si substrate are compatible with state-of-the-art semiconductor industry. They are expected to have potential applications in functional nanodevices. PMID:22502639

  17. Enhanced photocatalytic activity of ultra-high aspect ratio ZnO nanowires due to Cu induced defects

    NASA Astrophysics Data System (ADS)

    Pasupathi Sugavaneshwar, Ramu; Duy Dao, Thang; Nanda, Karuna Kar; Nagao, Tadaaki; Hishita, Shunichi; Sakaguchi, Isao

    2015-12-01

    We report the synthesis of ZnO nanowires in ambient air at 650°C by a single-step vapor transport method using two different sources Zn (ZnO nanowires-I) and Zn:Cu (ZnO nanowires-II). The Zn:Cu mixed source co-vaporize Zn with a small amount of Cu at temperatures where elemental Cu source does not vaporize. This method provides us a facile route for Cu doping into ZnO. The aspect ratio of the grown ZnO nanowires-II was found to be higher by more than five times compared ZnO nanowires-I. Photocatalytic activity was measured by using a solar simulator and its ultraviolet-filtered light. The ZnO nanowires-II shows higher catalytic activity due to increased aspect ratio and higher content of surface defects because of incorporation of Cu impurities.

  18. Optical and morphological properties of graphene sheets decorated with ZnO nanowires via polyol enhancement

    SciTech Connect

    Sharma, Vinay Rajaura, Rajveer Singh; Sharma, Preetam K.; Srivastava, Subodh; Vijay, Y. K.; Sharma, S. S.

    2014-04-24

    Graphene-ZnO nanocomposites have proven to be very useful materials for photovoltaic and sensor applications. Here, we report a facile, one-step in situ polymerization method for synthesis of graphene sheets randomly decorated with zinc oxide nanowires using ethylene glycol as solvent. We have used hydrothermal treatment for growth of ZnO nanowires. UV-visible spectra peak shifting around 288nm and 307 nm shows the presence of ZnO on graphene structure. Photoluminiscence spectra (PL) in 400nm-500nm region exhibits the luminescence quenching effect. Scanning electron microscopy (SEM) image confirms the growth of ZnO nanowires on graphene sheets.

  19. Resistive switching characteristics of ZnO nanowires.

    PubMed

    Yoo, Eun Ji; Shin, Il Kwon; Yoon, Tae Sik; Choi, Young Jin; Kang, Chi Jung

    2014-12-01

    Binary transition metal oxides such as ZnO, TiO2, and MnO; and their various structures such as thin film, nanowire, and nanoparticle assembly; have been widely investigated for use in insulators in resistive random access memory (ReRAM), considered a next-generation nonvolatile memory device. Among the various driving mechanisms of resistive switching in insulating materials, the conductive filament model is one of the most widely accepted. Studies on spatially confined structures such as one-dimensional nanostructures and zero-dimensional nanoparticles to reveal the detailed filament constructing mechanism are warranted because low-dimensional nanostructures can provide more localized properties with a narrow dispersion of operational parameter values compared with thin-film structures. We investigated the resistive switching characteristics of ZnO nanowire (NW) structures. The NWs were grown on an Au/Ti/SiO2/Si substrate via the hydrothermal method. The empty space between the top and bottom electrodes was filled with a photoresist to prevent direct connection between the electrodes. The top electrode (Cr) and bottom electrode (Au), both with a thickness of -100 nm, were deposited by DC sputtering. The current-voltage (I-V) measurements were performed using a semiconductor characterization system. Additionally, the local current image and the point I-V characteristics for each NW were examined by replacing the top electrode with a conducting atomic force microscope tip. The Au-ZnO NW-Cr devices exhibited bipolar resistive switching behavior. PMID:25971083

  20. Synthesis of Ni(OH)2 nanoflakes on ZnO nanowires by pulse electrodeposition for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Lo, I.-Hsiang; Wang, Jun-Yi; Huang, Kuo-Yen; Huang, Jin-Hua; Kang, Weng P.

    2016-03-01

    A high-performance supercapacitor based on Ni(OH)2 nanoflakes modified ZnO nanowires (NWs) was developed. The well-aligned ZnO NWs were synthesized by chemical bath deposition, followed by pulse electrodeposition of Ni(OH)2 nanoflakes on the surface of ZnO NWs at 1 mA cm-2 current density. The effects of the pulse electrodeposition conditions were systematically investigated. Both the pulse time and relaxation time were found to affect the size and interspacing of the nanoflakes, while the deposition cycle number determines the thickness of the Ni(OH)2 nanoflake shell. The ZnO/Ni(OH)2 nanocomposite electrode fabricated under the optimal pulse electrodeposition conditions has exhibited a large specific capacitance of 1830 F g-1, a high energy density of 51.5 Wh kg-1, and a high power density of 9 kW kg-1, revealing its potential application in electrochemical capacitors.

  1. Rapid large-scale preparation of ZnO nanowires for photocatalytic application.

    PubMed

    Ma, Chunyu; Zhou, Zhihua; Wei, Hao; Yang, Zhi; Wang, Zhiming; Zhang, Yafei

    2011-01-01

    ZnO nanowires are a promising nanomaterial for applications in the fields of photocatalysis, nano-optoelectronics, and reinforced composite materials. However, the challenge of producing large-scale ZnO nanowires has stunted the development and practical utilization of ZnO nanowires. In this study, a modified carbothermal reduction method for preparing large-scale ZnO nanowires in less than 5 min is reported. The preparation was performed in a quartz tube furnace at atmospheric pressure without using any catalysts. A mixed gas of air and N2 with a volume ratio of 45:1 was used as the reactive and carrier gas. About 0.8 g ZnO nanowires was obtained using 1 g ZnO and 1 g graphite powder as source materials. The obtained nanowires exhibited a hexagonal wurtzite crystal structure with an average diameter of about 33 nm. Good photocatalytic activity of the nanowires toward the photodegradation of methylene blue dye under UV irradiation was also demonstrated. PMID:21968032

  2. Rapid large-scale preparation of ZnO nanowires for photocatalytic application

    PubMed Central

    2011-01-01

    ZnO nanowires are a promising nanomaterial for applications in the fields of photocatalysis, nano-optoelectronics, and reinforced composite materials. However, the challenge of producing large-scale ZnO nanowires has stunted the development and practical utilization of ZnO nanowires. In this study, a modified carbothermal reduction method for preparing large-scale ZnO nanowires in less than 5 min is reported. The preparation was performed in a quartz tube furnace at atmospheric pressure without using any catalysts. A mixed gas of air and N2 with a volume ratio of 45:1 was used as the reactive and carrier gas. About 0.8 g ZnO nanowires was obtained using 1 g ZnO and 1 g graphite powder as source materials. The obtained nanowires exhibited a hexagonal wurtzite crystal structure with an average diameter of about 33 nm. Good photocatalytic activity of the nanowires toward the photodegradation of methylene blue dye under UV irradiation was also demonstrated. PMID:21968032

  3. Anisotropic third-order optical nonlinearity of a single ZnO micro/nanowire.

    PubMed

    Wang, Kai; Zhou, Jun; Yuan, Longyan; Tao, Yuting; Chen, Jian; Lu, Peixiang; Wang, Zhong Lin

    2012-02-01

    We report a systematic study about the anisotropic third-order optical nonlinearity of a single ZnO micro/nanowire by using the Z-scan method with a femtosecond laser. The two-photon absorption coefficient and nonlinear refraction index, which are measured as a function of polarization angle and sample orientation angle, exhibit oscillation curves with a period of π/2, indicating a highly polarized optical nonlinearity of the ZnO micro/nanowire. Further studies show that the polarized optical nonlinearity of the ZnO micro/nanowire is highly size-dependent. The results indicate that ZnO nanowire has great potential in applications of nanolasers, all-optical switching and polarization-sensitive photodetectors. PMID:22214490

  4. Flexible high-output nanogenerator based on lateral ZnO nanowire array.

    PubMed

    Zhu, Guang; Yang, Rusen; Wang, Sihong; Wang, Zhong Lin

    2010-08-11

    We report here a simple and effective approach, named scalable sweeping-printing-method, for fabricating flexible high-output nanogenerator (HONG) that can effectively harvesting mechanical energy for driving a small commercial electronic component. The technique consists of two main steps. In the first step, the vertically aligned ZnO nanowires (NWs) are transferred to a receiving substrate to form horizontally aligned arrays. Then, parallel stripe type of electrodes are deposited to connect all of the NWs together. Using a single layer of HONG structure, an open-circuit voltage of up to 2.03 V and a peak output power density of approximately 11 mW/cm(3) have been achieved. The generated electric energy was effectively stored by utilizing capacitors, and it was successfully used to light up a commercial light-emitting diode (LED), which is a landmark progress toward building self-powered devices by harvesting energy from the environment. This research opens up the path for practical applications of nanowire-based piezoelectric nanogeneragtors for self-powered nanosystems. PMID:20698630

  5. Graphene cathode-based ZnO nanowire hybrid solar cells.

    PubMed

    Park, Hyesung; Chang, Sehoon; Jean, Joel; Cheng, Jayce J; Araujo, Paulo T; Wang, Mingsheng; Bawendi, Moungi G; Dresselhaus, Mildred S; Bulović, Vladimir; Kong, Jing; Gradečak, Silvija

    2013-01-01

    Growth of semiconducting nanostructures on graphene would open up opportunities for the development of flexible optoelectronic devices, but challenges remain in preserving the structural and electrical properties of graphene during this process. We demonstrate growth of highly uniform and well-aligned ZnO nanowire arrays on graphene by modifying the graphene surface with conductive polymer interlayers. On the basis of this structure, we then demonstrate graphene cathode-based hybrid solar cells using two different photoactive materials, PbS quantum dots and the conjugated polymer P3HT, with AM 1.5G power conversion efficiencies of 4.2% and 0.5%, respectively, approaching the performance of ITO-based devices with similar architectures. Our method preserves beneficial properties of graphene and demonstrates that it can serve as a viable replacement for ITO in various photovoltaic device configurations. PMID:23205637

  6. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

    DOEpatents

    Han, Jung; Su, Jie

    2008-08-05

    Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

  7. Imaging Single ZnO Vertical Nanowire Laser Cavities using UV-Laser Scanning Confocal Microscopy

    SciTech Connect

    Gargas, D.J.; Toimil-Molares, M.E.; Yang, P.

    2008-11-17

    We report the fabrication and optical characterization of individual ZnO vertical nanowire laser cavities. Dilute nanowire arrays with interwire spacing>10 ?m were produced by a modified chemical vapor transport (CVT) method yielding an ideal platform for single nanowire imaging and spectroscopy. Lasing characteristics of a single vertical nanowire are presented, as well as high-resolution photoluminescence imaging by UV-laser scanning confocal microscopy. In addition, three-dimensional (3D) mapping of the photoluminescence emission performed in both planar and vertical dimensions demonstrates height-selective imaging useful for vertical nanowires and heteronanostructures emerging in the field of optoelectronics and nanophotonics.

  8. Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps

    PubMed Central

    2013-01-01

    Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [101_0] to infrequent [022_3] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of surface traps can be achieved simultaneously in ZnO nanowires via In doping. These unique properties make In-doped ZnO nanowire a potential material for photocatalysis application, which is demonstrated by the enhanced photocatalytic degradation of Rhodamine B. PMID:24256997

  9. Luminance behavior of lithium-doped ZnO nanowires with p-type conduction characteristics.

    PubMed

    Ko, Won Bae; Lee, Jun Seok; Lee, Sang Hyo; Cha, Seung Nam; Sohn, Jung Inn; Kim, Jong Min; Park, Young Jun; Kim, Hyun Jung; Hong, Jin Pyo

    2013-09-01

    The present study describes the room-temperature cathodeluminescence (CL) and temperature-dependent photoluminescence (PL) properties of p-type lithium (Li)-doped zinc oxide (ZnO) nanowires (NWs) grown by hydrothermal doping and post-annealing processes. A ZnO thin film was used as a seed layer in NW growth. The emission wavelengths and intensities of undoped ZnO NWs and p-type Li-doped ZnO NWs were analyzed for comparison. CL and PL observations of post-annealed p-type Li-doped ZnO NWs clearly exhibited a dominant sharp band-edge emission. Finally, a n-type ZnO thin film/p-type annealed Li-doped ZnO NW homojunction diode was prepared to confirm the p-type conduction of annealed Li-doped ZnO NWs as well as the structural properties measured by transmission electron microscopy. PMID:24205635

  10. Electrical anisotropy in coatings of aligned silver nanowires

    NASA Astrophysics Data System (ADS)

    Xu, Ye; Galderon-Ortiz, Gabriel; Exarhos, Annemarie; Alsayed, Ahmed; Winey, Karen; Kikkawa, Jay; Yodh, Arjun

    2015-03-01

    Conductive and transparent coatings consisting of silver nanowires (AgNWs) have been suggested as a promising candidate to replace traditional ITO coatings for emerging flexible electronics applications. The electrical properties of such AgNW coatings depend strongly on the structure of nanowire networks formed by various processing methods. In this work, we study how the alignment of nanowires affects the electrical anisotropy in AgNW coatings. Specifically, we introduce a robust method to prepare coatings of well-aligned AgNWs on glass substrates; the method utilizes the rapid flow of AgNW suspensions through a confined geometry. The angle-dependent sheet resistance of the coatings was measured, and large anisotropy in surface conductivity was found to characterize the aligned AgNW networks. We also explore the degree of alignment and surface coverage of AgNWs in the networks, thereby establishing connections between microscopy network structures and macroscopic electrical anisotropy. This work was supported by the NSF DMR12-05463, DMR-1305199, PENN MRSEC DMR11-20901, NASA NNX08AO0G grants, and Solvay.

  11. ZnO nanowire UV photodetectors with high internal gain.

    PubMed

    Soci, C; Zhang, A; Xiang, B; Dayeh, S A; Aplin, D P R; Park, J; Bao, X Y; Lo, Y H; Wang, D

    2007-04-01

    ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects. PMID:17358092

  12. Electrical properties of ZnO single nanowires

    NASA Astrophysics Data System (ADS)

    Stiller, Markus; Barzola-Quiquia, José; Zoraghi, Mahsa; Esquinazi, Pablo

    2015-10-01

    We have investigated the electrical resistance R(T) of ZnO nanowires of ≈ 400 nm diameter as a function of temperature, between 30 K and 300 K, and frequency in the range 40 Hz to 30 MHz. The measurements were done on the as-prepared and after low-energy proton implantation at room temperature. The temperature dependence of the resistance of the wire, before proton implantation, can be well described by two processes in parallel. One process is the fluctuation induced tunneling conductance (FITC) and the other the usual thermally activated process. The existence of a tunneling conductance was also observed in the current-voltage (I-V) results, and can be well described by the FITC model. Impedance spectroscopy measurements in the as-prepared state and at room temperature, indicate and support the idea of two contributions of these two transport processes in the nanowires. Electron backscatter diffraction confirms the existence of different crystalline regions. After the implantation of H+ a third thermally activated process is found that can be explained by taking into account the impurity band splitting due to proton implantation.

  13. Single ZnO nanowire ultraviolet detector with free-recovered contact performance

    NASA Astrophysics Data System (ADS)

    Wang, Feng; Wang, Liang; Li, Xin; Li, Zhenhu; Feng, Shuanglong; Lu, Wenqiang

    2016-06-01

    In this paper, a single ZnO nanowire ultraviolet detector was firstly fabricated by a single ZnO nanowire and silver paint, which can be free-recovered from a Schottky contact to an Ohmic contact. Key effect factors such as the illumination and bias voltage of the free-recovered performance were also investigated. Meanwhile, the reason for the recoverable contact was further confirmed in detail. This result is beneficial for developing the highly sensitive ZnO based ultraviolet detector.

  14. Efficient production of ZnO nanowires by a ball milling and annealing method

    NASA Astrophysics Data System (ADS)

    Glushenkov, A. M.; Zhang, H. Z.; Zou, J.; Lu, G. Q.; Chen, Y.

    2007-05-01

    ZnO powder was mechanically milled in a ball mill. This procedure was found to greatly increase its evaporation ability. The anomalous evaporation behaviour was caused by the disordered structure of the milled material and was not related to the increase in its surface area after milling. ZnO nanowires were synthesized by evaporation of this milled precursor. Nanowires with smooth and rough surfaces were present in the sample; the latter morphology was dominant. A green emission band centred at 510 nm was dominant in the cathodoluminescence spectrum of the nanowires.

  15. Photovoltaic effect and charge storage in single ZnO nanowires

    SciTech Connect

    Liao Zhimin; Xu Jun; Zhang Jingmin; Yu Dapeng

    2008-07-14

    Asymmetric Schottky barriers between ZnO nanowire and metal electrode have been fabricated at the two ends of the nanowire. An obvious photocurrent generated from the device at zero voltage bias can be switched on/off with quick response by controlling the light irradiation. Moreover, the device can still afford a current at zero bias after switching off light illumination, which is ascribed to the charge storage effect in single ZnO nanowires. The underlying mechanisms related to the photovoltaic effect and charge storage were discussed.

  16. Fabrication of ZnO nanowires through thermal heating of metallic Zn by solar energy

    NASA Astrophysics Data System (ADS)

    Lee, Geun-Hyoung

    2011-04-01

    ZnO nanowires were synthesized in a short time of a few seconds through a simple thermal evaporation of Zn powder using solar energy under air atmosphere. The Zn powder was heated by focusing sunlight on the Zn powder employing a magnifying lens. This strategy heated Zn to its evaporation temperature resulting in its oxidation in air. This procedure formed ZnO nanowires of ˜10 nm diameter and ˜2 μm length. As only Zn powder without any catalysts was used as the source material, it is suggested that the growth of the nanowires occurs through a vapor-solid mechanism. The cathodoluminescence (CL) spectrum from such ZnO nanowires showed strong ultraviolet emission indicating their highly crystalline quality besides good optical properties.

  17. Highly aligned vertical GaN nanowires using submonolayer metal catalysts

    DOEpatents

    Wang, George T.; Li, Qiming; Creighton, J. Randall

    2010-06-29

    A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.

  18. Large hexagonal arrays of aligned ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Banerjee, D.; Rybczynski, J.; Huang, J. Y.; Wang, D. Z.; Kempa, K.; Ren, Z. F.

    2005-02-01

    Large-scale truly periodic arrays of vertically aligned zinc oxide nanorods were grown on pre-patterned and pre-annealed gold dots on a-plane sapphire substrates via the vapor liquid solid mechanism. Periodic arrays of triangular gold islands were first patterned on the a-plane sapphire substrates by the nanosphere self-assembly technique. Zinc has been found to be an effective interfacial modifier between gold and sapphire to form single catalytic dots from triangular islands. The successful fabrication of zinc oxide nanowires in truly periodic arrays opens up the possibility of achieving enhanced room-temperature ultraviolet lasing and photonic crystal based devices and sensors.

  19. ZnO quantum dots-decorated ZnO nanowires for the enhancement of antibacterial and photocatalytic performances

    NASA Astrophysics Data System (ADS)

    Wu, Jyh Ming; Tsay, Li-Yi

    2015-10-01

    We demonstrate highly antibacterial activities for killing off Staphylococcus aureus and Escherichia coli using ZnO nanowires decorated with ZnO quantum dots (so-called ZnO QDs/NWs) under visible-light irradiation and dark conditions. The average size of the ZnO QDs is in the range of 3-5 nm; these were uniformly dispersed on the ZnO nanowires’ surface to form the ZnO QDs/NWs. A significant blue-shift effect was observed using photoluminescence (PL) spectra. The size of the ZnO QDs is strongly dependent on the material’s synthesis time. The ZnO QDs/NWs exhibited an excellent photocatalytic activity under visible-light irradiation. The ZnO QDs’ active sites (i.e. the O-H bond and Zn2+) accelerate the photogenerated-carrier migration from the QDs to the NWs. As a consequence, the electrons reacted with the dissolved oxygen to form oxygen ions and produced hydroperoxyl radicals to enhance photocatalytic activity. The antibacterial activities (as indicated by R-factor-inhibiting activity) of the ZnO QDs/NWs for killing off Staphylococcus aureus and Escherichia coli is around 4.9 and 5.5 under visible-light irradiation and dark conditions, respectively. The hydroxyl radicals served as an efficient oxidized agent for decomposing the organic dye and microorganism species. The antibacterial activities of the ZnO QDs/NWs in the dark may be attributed to the Zn2+ ions that were released from the ZnO QDs and infused into the microbial solution against the growth of bacteria thus disrupting the microorganism. The highly antibacterial and photocatalytic activity of the ZnO QDs/NWs can be well implanted on a screen window, thus offering a promising solution to inhibit the spread of germs under visible-light and dark conditions.

  20. Gate-tunable photocurrent in ZnO nanowires mediated by nanowire-substrate interface states

    SciTech Connect

    Yang, Liangliang; Wang, Qiaoming; Tao, Xin; Taylor, Shelby P.; Gu, Yi

    2015-03-02

    We report the observation of gate-tunable photocurrent in ZnO nanowires under optical excitation in the visible regime. Particularly, the photocurrent can be tuned by one order of magnitude with moderate changes in the backgate voltages (from −10 V to 10 V), and by more than two orders of magnitude within an extended range of the backgate voltage (several tens of volts). Using scanning photocurrent microscopy, single-nanowire photocurrent spectroscopy, and numerical calculations, we suggest that this gate tunability originates from the nanowire/substrate (Si{sub 3}N{sub 4}) interface states, where the electron occupation of these states and the excitation of electrons are controlled by the backgate voltage. This external gate tunability of the photocarrier generation facilitated by interface states provides an additional way to control photodetecting and photovoltaic properties, and this approach can also be extended to other nanostructures, such as two-dimensional semiconductors, where the surface effects are significant.

  1. Structural, photoluminescence and picosecond nonlinear optical effect of In-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Yan, Xiao-Yan; Yao, Cheng-Bao; Li, Jin; Hu, Jun-Yan; Li, Qiang-Hua; Yang, Shou-Bin

    2016-05-01

    In-doped ZnO (IZO) nanowires were grown using the chemical vapour deposition method. The IZO nanowires have been characterized by scanning electronic microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and UV-Visible spectroscopy. The PL results demonstrated a larger band-gap for the IZO nanowires in comparison to the undoped ZnO. Two major emission peaks were observed for the IZO nanowires, one originated from the free exciton recombination (ultraviolet emission) and another possibly related to the deep-level emission (visible emission). Furthermore, the nonlinear optical characteristic of the nanowires was studied using picosecond Z-scan technique. The experimental results show that the two and three-photon absorption coefficient of samples were able to be observed. These studies make the promising potential applications of the samples in the development of multifunctional all-optical devices.

  2. Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires

    DOE PAGESBeta

    Yoo, Jinkyoung; Yi, Gyu -Chul; Chon, Bonghwan; Joo, Taiha; Wang, Zhehui

    2016-04-11

    In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures havemore » been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.« less

  3. Conducting properties of nearly depleted ZnO nanowire UV sensors fabricated by dielectrophoresis

    NASA Astrophysics Data System (ADS)

    García Núñez, C.; García Marín, A.; Nanterne, P.; Piqueras, J.; Kung, P.; Pau, J. L.

    2013-10-01

    ZnO nanowires (NWs) with different radii (rNW) have been aligned between pre-patterned electrodes using dielectrophoresis (DEP) for the fabrication of high gain UV sensors. The DEP conditions (voltage amplitude and frequency) and electrode material, geometry and size were optimized to enhance the efficiency during the DEP process. To understand the alignment mechanism of the ZnO NWs, the dielectrophoretic force (FDEP) was analyzed as a function of the DEP conditions and NW dimensions. These studies showed that the DEP alignment process tends to trap NWs with a smaller radius. The effects of NW size on device performance were analyzed by means of I-V measurements in darkness and under illumination (200 nm < λ < 600 nm). In darkness, the NW resistance increases as rNW decreases due to the reduction of the conduction volume, until saturation is reached for rNW < 65 nm. On the other hand, the NW spectral photoresponse shows high values around 108 A W-1 (measured at 5 V and λ < 370 nm) and follows a linear trend as a function of the NW cross section. In addition, the cut-off wavelength depends on rNW, presenting a clear blue-shift for NWs with a lower radius (rNW < 50 nm). Transient photoresponse studies show that NWs with lower radii have longer rise times and shorter decay times mainly due to surface trapping effects. Regardless of NW size, passivation of the surface using a dielectric capping layer of SiO2 reduces the dynamic range of the photoresponse due to a strong increase of the dark current.

  4. Opto-electrical properties of Sb-doped p-type ZnO nanowires

    SciTech Connect

    Kao, Tzu-Hsuan; Chen, Jui-Yuan; Chiu, Chung-Hua; Huang, Chun-Wei; Wu, Wen-Wei

    2014-03-17

    P-type ZnO nanowires (NWs) have attracted much attention in the past years due to the potential applications for optoelectronics and piezotronics. In this study, we have synthesized Sb-doped p-type ZnO NWs on Si (100) substrates by chemical vapor deposition with Aucatalyst. The Sb-doped ZnO NWs are single crystalline with high density, grown along [1-1-2] direction. The doping percentage of Sb is about 2.49%, which has been confirmed by X-ray photoelectron spectroscopy. The ZnO NW field effect transistor demonstrated its p-type characteristics. A high responsivity to ultraviolet photodetection was also observed. In addition, compared to intrinsic ZnO NWs, the conductivity of the Sb-doped ZnO NWs exhibited ∼2 orders of magnitude higher. These properties make the p-type ZnO NWs a promising candidate for electronic and optoelectronic devices.

  5. Enhanced photoelectric performance in self-powered UV detectors based on ZnO nanowires with plasmonic Au nanoparticles scattered electrolyte

    NASA Astrophysics Data System (ADS)

    Zeng, Yiyu; Ye, Zhizhen; Lu, Bin; Dai, Wei; Pan, Xinhua

    2016-04-01

    Vertically aligned ZnO nanowires (NWs) were grown on a fluorine-doped tin-oxide-coated glass substrate by a hydrothermal method. Au nanoparticles were well dispersed in the mixed solution of ethanol and deionized water. A simple self-powered ultraviolet detector based on solid-liquid heterojunction was fabricated, utilizing ZnO NWs as active photoanode and such prepared mixed solution as electrolyte. The introduction of Au nanoparticles results in considerable improvements in the responsivity and sensitivity of the device compared with the one using deionized water as electrolyte, which is attributed to the enhanced light harvesting by Au nanoparticles.

  6. Nanoparticulate PdZn as a Novel Catalyst for ZnO Nanowire Growth

    PubMed Central

    2010-01-01

    ZnO nanowires have been grown by chemical vapour deposition (CVD) using PdZn bimetallic nanoparticles to catalyse the process. Nanocatalyst particles with mean particle diameters of 2.6 ± 0.3 nm were shown to catalyse the growth process, displaying activities that compare well with those reported for sputtered systems. Since nanowire diameters are linked to catalyst morphology, the size-control we are able to exhibit during particle preparation represents an advantage over existing approaches in terms of controlling nanowire dimensions, which is necessary in order to utilize the nanowires for catalytic or electrical applications. (See supplementary material 1) PMID:20672032

  7. Direct growth of densely aligned ZnO nanorods on graphene

    NASA Astrophysics Data System (ADS)

    Honda, Mitsuhiro; Okumura, Ryuji; Ichikawa, Yo

    2016-08-01

    Densely aligned ZnO nanorods were directly grown on graphene sheets. On graphene prepared via a chemical vapor deposition technique, ZnO nanorods were synthesized by a hydrothermal method. The rod density was ∼1.4 × 109/cm2 and the nanorods were observed to be well aligned on graphene by scanning electron microscopy. The formation of such ZnO structures is considered to be induced by carbon vacancies in graphene in accordance with Raman spectroscopic results.

  8. Microfabricated environmental barrier using ZnO nanowire on metal mesh

    NASA Astrophysics Data System (ADS)

    Shin, Young-Min; Lee, Seung-Ki; Lee, Joo-Yong; Kim, Jun-Ho; Park, Jae-Hyoung; Ji, Chang-Hyeon

    2013-12-01

    In this study, a waterproof environmental barrier for microsensor package has been developed using metal mesh covered with zinc oxide (ZnO) nanowire. A near superhydrophobic surface with two-dimensional array of holes has been fabricated by hydrothermal growth of ZnO nanowire on an off-the-shelf steel use stainless (SUS) mesh. For a twill-woven SUS wire mesh having wire thickness of 30 µm and gap of 33 µm, a maximum contact angle of 160.40° and a minimum contact angle hysteresis of 15.23° have been achieved using ZnO nanowire grown on the wire surface and further deposition of FC film. The mesh was able to withstand a maximum water pressure of 2,459.8 Pa. The measured height of ZnO nanowire was approximately 2-3 µm. The fabricated SUS mesh covered with ZnO nanowire has been assembled with a microphone package, and waterproof characteristics have been measured by cyclic dipping test at various water levels. For a microphone package having two acoustic ports on top and bottom covered with fabricated mesh, no visible change in acoustic characteristics has been observed up to 1,372.9 Pa of water pressure. Total volume of the package was 6.8 × 9.8 × 1.9 mm3.

  9. Strain Loading Mode Dependent Bandgap Deformation Potential in ZnO Micro/Nanowires.

    PubMed

    Fu, Xuewen; Liao, Zhi-Min; Liu, Ren; Lin, Fang; Xu, Jun; Zhu, Rui; Zhong, Wei; Liu, Yingkai; Guo, Wanlin; Yu, Dapeng

    2015-12-22

    The electronic-mechanical coupling in semiconductor nanostructures under different strain loading modes can modulate their photoelectric properties in different manners. Here, we report the systematic investigation on the strain mode dependent bandgap deformation potential of ZnO micro/nanowires under both uniaxial tensile and bending strains at room temperature. Uniaxial stretching-photoluminescence results show that the deformation potential of the smaller ZnO nanowire (with diameter d = 260 nm) is -30.6 meV/%, and is close to the bulk value, whereas it deviates the bulk value and becomes to be -10.6 meV/% when the wire diameter is increased to d = 2 μm. This unconventional size dependence stems from surface effect induced inhomogeneous strain in the surface layer and the core of the ZnO micro/nanowires under uniaxial tension. For bending load mode, the in situ high-resolution transmission electron microscope analysis reveals that the local strain distributes linearly in the bending cross section. Further cathodoluminescence measurements on a bending ZnO microwire (d = 1.8 μm) demonstrate that the deformation potential is -27 meV/%, whose absolute value is much larger than that of the ZnO microwire under uniaxial tension. Further analysis reveals that the distinct deformation potentials originate from the different deforming modes in ZnO micro/nanowires under bending or uniaxial tensile strains. Our results should facilitate the design of flexible optoelectronic nanodevices. PMID:26517647

  10. "High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires"

    SciTech Connect

    GARGAS, DANIEL; GAO, HANWEI; WANG, HUNGTA; PEIDONG, YANG

    2010-12-01

    External quantum efficiency (EQE) of photoluminescence as high as 20 percent from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials.

  11. Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization.

    PubMed

    Han, Cheng; Xiang, Du; Zheng, Minrui; Lin, Jiadan; Zhong, Jianqiang; Sow, Chorng Haur; Chen, Wei

    2015-03-01

    Using in situ field effect transistor (FET) characterization combined with the molecular beam epitaxy technique, we demonstrate a significant depletion of electron charge carriers in single zinc oxide (ZnO) nanowire through the surface modification with molybdenum trioxide (MoO3) and 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HATCN) layers. The electron mobility of ZnO nanowire was found to sharply decrease after the surface modification with MoO3; in contrast, the electron mobility significantly increased after functionalization with HATCN layers. Such depletion of n-type conduction originates from the interfacial charge transfer, corroborated by in situ photoelectron spectroscopy studies. The air exposure effect on MoO(3-) and HATCN-coated ZnO nanowire devices was also investigated. PMID:25676393

  12. Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization

    NASA Astrophysics Data System (ADS)

    Han, Cheng; Xiang, Du; Zheng, Minrui; Lin, Jiadan; Zhong, Jianqiang; Haur Sow, Chorng; Chen, Wei

    2015-03-01

    Using in situ field effect transistor (FET) characterization combined with the molecular beam epitaxy technique, we demonstrate a significant depletion of electron charge carriers in single zinc oxide (ZnO) nanowire through the surface modification with molybdenum trioxide (MoO3) and 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HATCN) layers. The electron mobility of ZnO nanowire was found to sharply decrease after the surface modification with MoO3; in contrast, the electron mobility significantly increased after functionalization with HATCN layers. Such depletion of n-type conduction originates from the interfacial charge transfer, corroborated by in situ photoelectron spectroscopy studies. The air exposure effect on MoO3- and HATCN-coated ZnO nanowire devices was also investigated.

  13. High quantum efficiency of band-edge emission from ZnO nanowires.

    PubMed

    Gargas, Daniel J; Gao, Hanwei; Wang, Hungta; Yang, Peidong

    2011-09-14

    External quantum efficiency (EQE) of photoluminescence as high as 20% from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials. PMID:21859081

  14. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    SciTech Connect

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-12-04

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices.

  15. Tunable Surface Wettability of ZnO Nanoparticle Arrays for Controlling the Alignment of Liquid Crystals.

    PubMed

    Chung, Yueh-Feng; Chen, Mu-Zhe; Yang, Sheng-Hsiung; Jeng, Shie-Chang

    2015-05-13

    The control of the liquid crystal (LC) alignment is very important for both academic research and practical applications. LC molecules aligned on the ZnO nanoparticle arrays (ZnO NPAs) are demonstrated and the pretilt angles of LCs can be controlled by using ZnO NPAs with different surface wettability. The wettability of ZnO NPAs fabricated by the solution-based hydrothermal method can be controlled by changing the annealing temperature of the as-prepared ZnO NPAs. The measurements of the energy-dispersive spectra and photoluminescence have shown that the chemical properties of ZnO NPAs have been changed with the annealing temperature. Our results show that the pretilt angle of LCs can be tuned continuously from ∼0 to ∼90° as the contact angle of water on ZnO NPAs changes from 33 to 108°. PMID:25895105

  16. Carrier density driven lasing dynamics in ZnO nanowires.

    PubMed

    Wille, Marcel; Sturm, Chris; Michalsky, Tom; Röder, Robert; Ronning, Carsten; Schmidt-Grund, Rüdiger; Grundmann, Marius

    2016-06-01

    We report on the temporal lasing dynamics of high quality ZnO nanowires using the time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature-dependent emission onset-time ([Formula: see text]) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse. PMID:27103563

  17. Carrier density driven lasing dynamics in ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Wille, Marcel; Sturm, Chris; Michalsky, Tom; Röder, Robert; Ronning, Carsten; Schmidt-Grund, Rüdiger; Grundmann, Marius

    2016-06-01

    We report on the temporal lasing dynamics of high quality ZnO nanowires using the time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron–hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature-dependent emission onset-time ({t}{{on}}) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse.

  18. One step syntheses of S incorporated ZnO nanowires for photocatalysis applications

    NASA Astrophysics Data System (ADS)

    Awad, Madeha Ahmed; Ibrahim, Eslam Mohamed Mohamed; Ahmed, Ahmed Mohamed

    2015-12-01

    S incorporated ZnO nanowires (NWs) were prepared by vapor transport method using ZnS bulk precursor. Effects of S incorporation on the structural, morphological, optical as well as photocatalysis performance of ZnO NWs were studied. EDAX analysis revealed existence of S with low ratio. A deformation of the hexagonal nanowires was observed inasmuch to the S existence. X-ray diffraction analysis asserted the formation of a single phase of ZnO with the emergence of two weak peaks identifier for ZnS. The low value of the optical band gap (3.10 eV) was ascribed to the increase in the level of the valence band maximum induced by the S doping. The capability of S incorporated ZnO as a photocatalyst was tested by the decomposition of methylene blue.

  19. Single ZnO Nanowire-Based Gas Sensors to Detect Low Concentrations of Hydrogen.

    PubMed

    Cardoza-Contreras, Marlene N; Romo-Herrera, José M; Ríos, Luis A; García-Gutiérrez, R; Zepeda, T A; Contreras, Oscar E

    2015-01-01

    Low concentrations of hazardous gases are difficult to detect with common gas sensors. Using semiconductor nanostructures as a sensor element is an alternative. Single ZnO nanowire gas sensor devices were fabricated by manipulation and connection of a single nanowire into a four-electrode aluminum probe in situ in a dual-beam scanning electron microscope-focused ion beam with a manipulator and a gas injection system in/column. The electrical response of the manufactured devices shows response times up to 29 s for a 121 ppm of H₂ pulse, with a variation in the nanowire resistance appreciable at room temperature and at 373.15 K of approximately 8% and 14% respectively, showing that ZnO nanowires are good candidates to detect low concentrations of H₂. PMID:26690158

  20. Single ZnO Nanowire-Based Gas Sensors to Detect Low Concentrations of Hydrogen

    PubMed Central

    Cardoza-Contreras, Marlene N.; Romo-Herrera, José M.; Ríos, Luis A.; García-Gutiérrez, R.; Zepeda, T. A.; Contreras, Oscar E.

    2015-01-01

    Low concentrations of hazardous gases are difficult to detect with common gas sensors. Using semiconductor nanostructures as a sensor element is an alternative. Single ZnO nanowire gas sensor devices were fabricated by manipulation and connection of a single nanowire into a four-electrode aluminum probe in situ in a dual-beam scanning electron microscope-focused ion beam with a manipulator and a gas injection system in/column. The electrical response of the manufactured devices shows response times up to 29 s for a 121 ppm of H2 pulse, with a variation in the nanowire resistance appreciable at room temperature and at 373.15 K of approximately 8% and 14% respectively, showing that ZnO nanowires are good candidates to detect low concentrations of H2. PMID:26690158

  1. Study of faceted Au nanoparticle capped ZnO nanowires: antireflection, surface enhanced Raman spectroscopy and photoluminescence aspects

    NASA Astrophysics Data System (ADS)

    Ghosh, A.; Juluri, R. R.; Guha, P.; Sathyavathi, R.; Dash, Ajit; Jena, B. K.; Satyam, P. V.

    2015-02-01

    We report a single step growth process of faceted Au nanoparticles (NPs) on highly c-axis oriented ZnO nanowires (NWs) and report that a system with a lower antireflection coefficient also showed higher surface enhanced Raman spectroscopy (SERS) enhanced factors. Well-dispersed Au NPs are grown on silicon substrate using a thin film-in-air-annealing method (using 1 nm and 5 nm thick Au films on silicon and subsequent annealing in air at 800 °C) wherein enhanced oxide growth at the Au-Si interface was used to inhibit inter-diffusion to avoid Au-Si alloy formation (Au/SiOx/Si). These substrates are used to grow aligned ZnO NWs using a high temperature (≈900 °C) chemical vapour deposition method. Depending on the size and areal density of initial catalytic Au NPs, the resultant photoluminescence, reflectance characteristics, and effectiveness as SERS substrates of the faceted Au NP capped ZnO NWs coatings are systematically studied. The highly oriented and faceted Au NPs on ZnO NWs have been used as free standing SERS substrates to detect sub-micro molar crystal violet molecules with an analytical enhancement factor (AEF) of ≥104 and with high repeatability. The substrate with high-density Au-ZnO heterostructures (5 nm Au case) found to have larger AEF, very low reflectance (≈0.75%) and more green emission.

  2. Self-assembled ZnO agave-like nanowires and anomalous superhydrophobicity

    NASA Astrophysics Data System (ADS)

    Yang, Y. H.; Li, Z. Y.; Wang, B.; Wang, C. X.; Chen, D. H.; Yang, G. W.

    2005-09-01

    Thin films of ZnO agave-like nanowires were prepared on amorphous carbon thin layers on silicon substrates using thermal chemical vapour transport and condensation without any metal catalysts. The unusual superhydrophobicity of the fabricated surface was measured; the water contact angle reaches 151.1°. On the basis of experimental and theoretical analyses, it appears likely that the biomimetic microcomposite and nanocomposite surfaces of the prepared thin films of ZnO agave-like nanowires are responsible for the excellent superhydrophobicity.

  3. Coexistence of strong and weak coupling in ZnO nanowire cavities

    NASA Astrophysics Data System (ADS)

    Michalsky, Tom; Franke, Helena; Buschlinger, Robert; Peschel, Ulf; Grundmann, Marius; Schmidt-Grund, Rüdiger

    2016-06-01

    We present a high quality two-dimensional cavity structure based on ZnO nanowires coated with concentrical Bragg reflectors. The spatial mode distribution leads to the simultaneous appearance of the weak and strong coupling regime even at room temperature. Photoluminescence (PL) measurements agree with finite difference time domain (FDTD) simulations. Furthermore the ZnO core nanowires allow for the observation of middle polariton branches between the A- and B-exciton ground state resonances. Further, lasing emission up to room temperature is detected in excitation dependent photoluminescence measurements. Supplementary online material is available in electronic form at http://www.epjap.org

  4. Facile route to high-density, ordered ZnO nanowire arrays and their photoluminescence properties

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Tao, Xiaoming; Liu, Yuyang; Sun, Xiaohong; Hu, Zhigang; Fei, Bin

    2006-10-01

    A simple template-directed wet chemistry route based on traditional thermal decomposition technique has been developed for the preparation of high-density, ordered ZnO nanowire arrays. The fabrication was performed at relative low temperature without involving complex procedures, sophisticated equipment and rigorous experiment conditions, thereby providing a straightforward and mild method to produce metal/metal oxide ordered nanostructures. The nanowire array system was evaluated by SEM, XRD, TEM and PL. A stable luminescence at 425 nm was present.

  5. ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts

    NASA Astrophysics Data System (ADS)

    Yang, Wenming; Zhu, Rong; Zong, Xianli

    2016-02-01

    Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 1017/m3 orders of magnitude, which is practicable for most discharging applications.

  6. ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts.

    PubMed

    Yang, Wenming; Zhu, Rong; Zong, Xianli

    2016-12-01

    Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 10(17)/m(3) orders of magnitude, which is practicable for most discharging applications. PMID:26880727

  7. Chemical bath deposition of ZnO nanowires at near-neutral pH conditions without hexamethylenetetramine (HMTA): understanding the role of HMTA in ZnO nanowire growth.

    PubMed

    McPeak, Kevin M; Le, Thinh P; Britton, Nathan G; Nickolov, Zhorro S; Elabd, Yossef A; Baxter, Jason B

    2011-04-01

    Chemical bath deposition (CBD) is an inexpensive and reproducible method for depositing ZnO nanowire arrays over large areas. The aqueous Zn(NO(3))(2)-hexamethylenetetramine (HMTA) chemistry is one of the most common CBD chemistries for ZnO nanowire synthesis, but some details of the reaction mechanism are still not well-understood. Here, we report the use of in situ attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy to study HMTA adsorption from aqueous solutions onto ZnO nanoparticle films and show that HMTA does not adsorb on ZnO. This result refutes earlier claims that the anisotropic morphology arises from HMTA adsorbing onto and capping the ZnO {10 1 0} faces. We conclude that the role of HMTA in the CBD of ZnO nanowires is only to control the saturation index of ZnO. Furthermore, we demonstrate the first deposition of ZnO nanowire arrays at 90 °C and near-neutral pH conditions without HMTA. Nanowires were grown using the pH buffer 2-(N-morpholino)ethanesulfonic acid (MES) and continuous titratation with KOH to maintain the same pH conditions where growth with HMTA occurs. This semi-batch synthetic method opens many new opportunities to tailor the ZnO morphology and properties by independently controlling temperature and pH. PMID:21361384

  8. Direct selective growth of ZnO nanowire arrays from inkjet-printed zinc acetate precursor on a heated substrate

    PubMed Central

    2013-01-01

    Inkjet printing of functional materials has drawn tremendous interest as an alternative to the conventional photolithography-based microelectronics fabrication process development. We introduce direct selective nanowire array growth by inkjet printing of Zn acetate precursor ink patterning and subsequent hydrothermal ZnO local growth without nozzle clogging problem which frequently happens in nanoparticle inkjet printing. The proposed process can directly grow ZnO nanowires in any arbitrary patterned shape, and it is basically very fast, low cost, environmentally benign, and low temperature. Therefore, Zn acetate precursor inkjet printing-based direct nanowire local growth is expected to give extremely high flexibility in nanomaterial patterning for high-performance electronics fabrication especially at the development stage. As a proof of concept of the proposed method, ZnO nanowire network-based field effect transistors and ultraviolet photo-detectors were demonstrated by direct patterned grown ZnO nanowires as active layer. PMID:24252130

  9. Thermal conductivity of a ZnO nanowire/silica aerogel nanocomposite

    NASA Astrophysics Data System (ADS)

    Xie, Jing; Frachioni, Anthony; Williams, D. S.; White, B. E.

    2013-05-01

    The thermal conductivity of 100 nm zinc oxide nanowires embedded in silica aerogel was measured using the 3ω method over a temperature range of 150 K to 300 K. Compared to 100 nm ZnO nanowires alone, the thermal conductivity of the nanocomposite was reduced by over an order of magnitude throughout this temperature range. We attribute this reduction to the scattering of ballistic phonons at the nanowire surface and the subsequent emission of and transport of energy by the scattered phonon into the silica aerogel, as predicted by the diffuse mismatch model.

  10. Effect of Surface Elasticity on the Piezoelectric Potential of a Bent ZnO Nanowire

    NASA Astrophysics Data System (ADS)

    Yao, Haiyan; Yun, Guohong; Bai, Narsu; Li, Jiangang

    2012-07-01

    The influence of surface elasticity on the piezoelectric potential distribution of a deformed ZnO nanowire is investigated by the effective Young's modulus based upon elastic and piezoelectric theory. When the nanowire in radius 25 nm subjects to an lateral applied force 5 nN, the maximum piezoelectric potential of the nanowire we derived is about 13.8 mV, which approaches much more closely to the experiment measurement value (˜10 mV) [Z. L. Wang and J. H. Song: Science 312 (2006) 242]. Moreover, a comprehensive analysis of maximum piezoelectric potential between the cases with and without the effect of surface elasticity is analyzed. The results show that the values of piezoelectric potential generated in ZnO nanowires are decreased due to the surface stiffening. From the theoretical analysis, the effect of surface elasticity has a significant impact on the piezoelectric potential for a bent ZnO nanowire, actually it reduces the gap between theoretical estimation and experiment measurements.

  11. Electrically pumped near-ultraviolet lasing from ZnO Nanowire Based Heterojunctions

    NASA Astrophysics Data System (ADS)

    Mu, Richard; Xu, Haiyang; Liu, Yichun

    2014-03-01

    ZnO with a band gap (3.37 eV) and an exciton binding energy (60 meV) is a promising material for ultraviolet (UV) light-emitting diodes (LEDs) and low-threshold lasing diodes. Much progress has been made recently to enhance band edge emission of ZnO nanowire (NW) structure through surface passivation and local surface plasmon enahncement with metal nanparticles. Efforts have been made to fabricate electrically pumped near-ultraviolet lasing devices with metal/insulator/semiconductor laser diode based on ZnO/MgO core/shell nanowires with and without metal nanoparticle presences. The nanowire diode shows higher emission intensity at relatively low operating current density compared with the planar device. The improved efficiency is attributed to enhanced exciton oscillator strength and superior carrier transport properties of single-crystalline ZnO nanowires, and effective surface passivation by MgO coating. Random laser action was confirmed by the calculation of quality factor and the real-time changes of lasing spectra. The results reveal that the MgO coating serves as electron blocking, hole supplying and surface passivation layer for the nanowire heterostructure. Other approaches will also be presented and discussed in the presentation. DMR-0423914, NSF-CREST HRD-0420516, and DOD W911NF-11-1-0156 and -13-1-0153.

  12. Ferromagnetism in Gd doped ZnO nanowires: A first principles study

    SciTech Connect

    Aravindh, S. Assa; Schwingenschloegl, Udo E-mail: iman.roqan@kaust.edu.sa; Roqan, Iman S. E-mail: iman.roqan@kaust.edu.sa

    2014-12-21

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn{sub 48}O{sub 48} nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high T{sub C} in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

  13. Hydrothermal Synthesis of ZnO Structures Formed by High-Aspect-Ratio Nanowires for Acetone Detection

    NASA Astrophysics Data System (ADS)

    Cao, Zhen; Wang, Yong; Li, Zhanguo; Yu, Naisen

    2016-07-01

    Snowflake-like ZnO structures originating from self-assembled nanowires were prepared by a low-temperature aqueous solution method. The as-grown hierarchical ZnO structures were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The results showed that the snowflake-like ZnO structures were composed of high-aspect-ratio nanowires. Furthermore, gas-sensing properties to various testing gases of 10 and 50 ppm were measured, which confirms that the ZnO structures were of good selectivity and response to acetone and could serve for acetone sensor to detect low-concentration acetone.

  14. Terahertz detectors arrays based on orderly aligned InN nanowires

    PubMed Central

    Chen, Xuechen; Liu, Huiqiang; Li, Qiuguo; Chen, Hao; Peng, Rufang; Chu, Sheng; Cheng, Binbin

    2015-01-01

    Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series. PMID:26289498

  15. Investigation of Nucleation Mechanism and Tapering Observed in ZnO Nanowire Growth by Carbothermal Reduction Technique

    PubMed Central

    2011-01-01

    ZnO nanowire nucleation mechanism and initial stages of nanowire growth using the carbothermal reduction technique are studied confirming the involvement of the catalyst at the tip in the growth process. Role of the Au catalyst is further confirmed when the tapering observed in the nanowires can be explained by the change in the shape of the catalyst causing a variation of the contact area at the liquid–solid interface of the nanowires. The rate of decrease in nanowire diameter with length on the average is found to be 0.36 nm/s and this rate is larger near the base. Variation in the ZnO nanowire diameter with length is further explained on the basis of the rate at which Zn atoms are supplied as well as the droplet stability at the high flow rates and temperature. Further, saw-tooth faceting is noticed in tapered nanowires, and the formation is analyzed crystallographically.

  16. ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

    PubMed

    Hu, Qichang; Li, Yafeng; Huang, Feng; Zhang, Zhaojun; Ding, Kai; Wei, Mingdeng; Lin, Zhang

    2015-01-01

    High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate. PMID:26099568

  17. ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells

    PubMed Central

    Hu, Qichang; Li, Yafeng; Huang, Feng; Zhang, Zhaojun; Ding, Kai; Wei, Mingdeng; Lin, Zhang

    2015-01-01

    High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate. PMID:26099568

  18. Nanogenerators based on vertically aligned InN nanowires.

    PubMed

    Liu, Guocheng; Zhao, Songrui; Henderson, Robert D E; Leonenko, Zoya; Abdel-Rahman, Eihab; Mi, Zetian; Ban, Dayan

    2016-01-28

    Piezoelectric nanogenerators (NGs) based on vertically aligned InN nanowires (NWs) are fabricated, characterized, and evaluated. In these NGs, arrays of p-type and intrinsic InN NWs prepared by plasma-assisted molecular beam epitaxy (MBE) demonstrate similar piezoelectric properties. The p-type NGs show 160% more output current and 70% more output power product than the intrinsic NGs. The features driving performance enhancement are reduced electrostatic losses due to better NW array morphology, improved electromechanical energy conversion efficiency due to smaller NW diameters, and the higher impedance of intrinsic NGs due to elevated NW surface charge levels. These findings highlight the potential of InN based NGs as a power source for self-powered systems and the importance of NW morphology and surface state in overall NG performance. PMID:26700694

  19. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  20. Opto-mechano-electrical tripling in ZnO nanowires probed by photocurrent spectroscopy in a high-resolution transmission electron microscope

    SciTech Connect

    Zhang, C.; Golberg, D. E-mail: golberg.dmitri@nims.go.jp; Xu, Z. E-mail: golberg.dmitri@nims.go.jp; Kvashnin, D. G.; Tang, D.-M.; Xue, Y. M.; Bando, Y.; Sorokin, P. B.

    2015-08-31

    Photocurrent spectroscopy of individual free-standing ZnO nanowires inside a high-resolution transmission electron microscope (TEM) is reported. By using specially designed optical in situ TEM system capable of scanning tunneling microscopy probing paired with light illumination, opto-mechano-electrical tripling phenomenon in ZnO nanowires is demonstrated. Splitting of photocurrent spectra at around 3.3 eV under in situ TEM bending of ZnO nanowires directly corresponds to nanowire deformation and appearance of expanded and compressed nanowire sides. Theoretical simulation of a bent ZnO nanowire has an excellent agreement with the experimental data. The splitting effect could be explained by a change in the valence band structure of ZnO nanowires due to a lattice strain. The strain-induced splitting provides important clues for future flexible piezo-phototronics.

  1. Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

    PubMed

    Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

    2013-09-24

    We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy. PMID:23952783

  2. Strain-induced band alignment in wurtzite/zinc-blende InAs heterostructured nanowires

    NASA Astrophysics Data System (ADS)

    Panda, Jaya Kumar; Roy, Anushree; Chakraborty, Arup; Dasgupta, Indra; Hasanu, Elena; Ercolani, Daniele; Sorba, Lucia; Gemmi, Mauro

    2015-11-01

    We study band alignment in wurtzite/zinc-blende polytype InAs heterostructured nanowires using temperature-dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high-symmetry point of the Brillouin zone (E1 gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite/zinc-blende interface. Our experimental results are further supported by electronic-structure calculations for such periodic heterostructured interface.

  3. Synthesis of ZnO nanowires for thin film network transistors

    NASA Astrophysics Data System (ADS)

    Dalal, S. H.; Unalan, H. E.; Zhang, Y.; Hiralal, Pritesh; Gangloff, L.; Flewitt, Andrew J.; Amaratunga, Gehan A. J.; Milne, William I.

    2008-08-01

    Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm2/Vs (effective thin film mobility: 0.03 cm2/Vs) in devices with 20μm channel lengths and ON/OFF ratios of up to 104.

  4. Steering epitaxial alignment of Au, Pd, and AuPd nanowire arrays by atom flux change.

    PubMed

    Yoo, Youngdong; Seo, Kwanyong; Han, Sol; Varadwaj, Kumar S K; Kim, Hyun You; Ryu, Ji Hoon; Lee, Hyuck Mo; Ahn, Jae Pyoung; Ihee, Hyotcherl; Kim, Bongsoo

    2010-02-10

    We have synthesized epitaxial Au, Pd, and AuPd nanowire arrays in vertical or horizontal alignment on a c-cut sapphire substrate. We show that the vertical and horizontal nanowire arrays grow from half-octahedral seeds by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. The alignment of nanowires can be steered by changing the atom flux. At low atom deposition flux vertical nanowires grow, while at high atom flux horizontal nanowires grow. Similar vertical/horizontal epitaxial growth is also demonstrated on SrTiO(3) substrates. This orientation-steering mechanism is visualized by molecular dynamics simulations. PMID:20050692

  5. Photoluminescence based H2 and O2 gas sensing by ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Yadav, Kavita; Gahlaut, Shashank K.; Mehta, B. R.; Singh, J. P.

    2016-02-01

    Gas sensing properties of ZnO nanowires prepared via thermal chemical vapor deposition method were investigated by analyzing change in their photoluminescence (PL) spectra. The as-synthesized nanowires show two different PL peaks positioned at 380 nm and 520 nm. The 380 nm emission is ascribed to near band edge emission, and the green peak (520 nm) appears due to the oxygen vacancy defects. The intensity of the green PL signal enhances upon hydrogen gas exposure, whereas it gets quenched upon oxygen gas loading. The ZnO nanowires' sensing response values were observed as about 54% for H2 gas and 9% for O2 gas at room temperature for 50 sccm H2/O2 gas flow rate. The sensor response was also analyzed as a function of sample temperature ranging from 300 K to 400 K. A conclusion was derived from the observations that the H2/O2 gases affect the adsorbed oxygen species on the surface of ZnO nanowires. The adsorbed species result in the band bending and hence changes the depletion region which causes variation in PL signal. A photoluminescence based gas sensing technique has advantage over a conductometric technique due to its higher sensitivity and faster response time.

  6. Highly aligned arrays of high aspect ratio barium titanate nanowires via hydrothermal synthesis

    SciTech Connect

    Bowland, Christopher C.; Zhou, Zhi; Malakooti, Mohammad H.; Sodano, Henry A.

    2015-06-01

    We report on the development of a hydrothermal synthesis procedure that results in the growth of highly aligned arrays of high aspect ratio barium titanate nanowires. Using a multiple step, scalable hydrothermal reaction, a textured titanium dioxide film is deposited on titanium foil upon which highly aligned nanowires are grown via homoepitaxy and converted to barium titanate. Scanning electron microscope images clearly illustrate the effect the textured film has on the degree of orientation of the nanowires. The alignment of nanowires is quantified by calculating the Herman's Orientation Factor, which reveals a 58% improvement in orientation as compared to growth in the absence of the textured film. The ferroelectric properties of barium titanate combined with the development of this scalable growth procedure provide a powerful route towards increasing the efficiency and performance of nanowire-based devices in future real-world applications such as sensing and power harvesting.

  7. Genetic patterns of Zn 2GeO 4 coated ZnO nanowires from phase texture distribution of biphase brass substrate

    NASA Astrophysics Data System (ADS)

    Chen, Yiqing; Liu, Lizhu; Zhang, Xinhua; Guo, Taibo; Jia, Chong; Su, Yong; Li, Qiang; Wei, Meiqin

    2010-08-01

    Based on the natural patterns of phase texture distribution of (α+β) biphase brass substrate, we synthesize the patterned quasi-aligned Zn 2GeO 4 coated ZnO nanowires by one-step thermal evaporation of the mixture powders of GeO 2 and C, and characterize the products by means of X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, optical microscopy and photoluminescence spectroscopy. It is observed that following the self-catalyzed effect of the Zn clusters, quasi-aligned Zn 2GeO 4 coated ZnO nanowires grow site-selectively on the surface of island-shaped α phase and form novel patterns which inherit the distribution of α phase on the substrate. According to the pattern and feature of phase texture distribution of the alloy substrate, we can synthesize the patterned nanowires arrays with controlled location and distribution in a more effective way.

  8. First principles investigations on the electronic structure of anchor groups on ZnO nanowires and surfaces

    SciTech Connect

    Dominguez, A.; Lorke, M.; Rosa, A. L.; Frauenheim, Th.; Schoenhalz, A. L.; Dalpian, G. M.; Rocha, A. R.

    2014-05-28

    We report on density functional theory investigations of the electronic properties of monofunctional ligands adsorbed on ZnO-(1010) surfaces and ZnO nanowires using semi-local and hybrid exchange-correlation functionals. We consider three anchor groups, namely thiol, amino, and carboxyl groups. Our results indicate that neither the carboxyl nor the amino group modify the transport and conductivity properties of ZnO. In contrast, the modification of the ZnO surface and nanostructure with thiol leads to insertion of molecular states in the band gap, thus suggesting that functionalization with this moiety may customize the optical properties of ZnO nanomaterials.

  9. Photoelectric properties and charge dynamics in ZnO nanowires/Cu4Bi4S9 and ZnO nanowires/In2O3/Cu4Bi4S9 heterostructures

    NASA Astrophysics Data System (ADS)

    Liu, Xiangyang; Wang, Shun; Zhang, Jingwei; Zhang, Jiwei; Gu, Yuzong

    2014-12-01

    ZnO nanowires arrays were preformed in a horizontal double-tube system. Two types of heterostructures (ZnO nanowires/Cu4Bi4S9 and ZnO nanowires/In2O3/Cu4Bi4S9) and three-dimensional solar cells were fabricated with ZnO nanowires arrays as working electrode, In2O3 as buffer layer, and Cu4Bi4S9 as inorganic dye and hole collector. It is suggested that two types of heterostructures have the similar absorption properties with single Cu4Bi4S9. However, the results of steady state and electric field-induced surface photovoltage indicate that ZnO nanowires/In2O3/Cu4Bi4S9 exhibits the higher photovoltaic response than ZnO nanowires/Cu4Bi4S9. Using the transient surface photovoltage spectroscopy, we further studied the separation and transport mechanism of photogenerated charges. Furthermore, Cu4Bi4S9/In2O3/ZnO cells presents the better performance than Cu4Bi4S9/ZnO cells and the highest efficiencies are about 6.4% and 5.2%, respectively. It is suggested that direct paths, interface barrier, built-in electric field, and double energy level matchings between conduction bands (Cu4Bi4S9 and In2O3, In2O3 and ZnO) have obvious effect on the separation of photogenerated charges. Then we discussed the synthetic action on the charge dynamics from these factors.

  10. Programmable ZnO nanowire transistors using switchable polarization of ferroelectric liquid crystal

    NASA Astrophysics Data System (ADS)

    Hong, Woong-Ki; Inn Sohn, Jung; Cha, SeungNam; Min Kim, Jong; Park, Jong-Bae; Seok Choi, Su; Coles, Harry J.; Welland, Mark E.

    2013-02-01

    We demonstrate modulations of electrical conductance and hysteresis behavior in ZnO nanowire transistors via electrically polarized switching of ferroelectric liquid crystal (FLC). After coating a nanowire channel in the transistors with FLCs, we observed large increases in channel conductance and hysteresis width, and a strong dependence of hysteresis loops on the polarization states associated with the orientation of electric dipole moments along the direction of the gate electric field. Furthermore, the reversible switching and retention characteristics provide the feasibility of creating a hybrid system with switch and memory functions.

  11. Low-Temperature Preparation of Ag-Doped ZnO Nanowire Arrays, DFT Study, and Application to Light-Emitting Diode.

    PubMed

    Pauporté, Thierry; Lupan, Oleg; Zhang, Jie; Tugsuz, Tugba; Ciofini, Ilaria; Labat, Frédéric; Viana, Bruno

    2015-06-10

    Doping ZnO nanowires (NWs) by group IB elements is an important challenge for integrating nanostructures into functional devices with better and tuned performances. The growth of Ag-doped ZnO NWs by electrodeposition at 90 °C using a chloride bath and molecular oxygen precursor is reported. Ag acts as an electrocatalyst for the deposition and influences the nucleation and growth of the structures. The silver atomic concentration in the wires is controlled by the additive concentration in the deposition bath and a content up to 3.7 atomic % is reported. XRD analysis shows that the integration of silver enlarges the lattice parameters of ZnO. The optical measurements also show that the direct optical bandgap of ZnO is reduced by silver doping. The bandgap shift and lattice expansion are explained by first principle calculations using the density functional theory (DFT) on the silver impurity integration as an interstitial (Ag(i)) and as a substitute of zinc atom (Ag(Zn)) in the crystal lattice. They notably indicate that Ag(Zn) doping forms an impurity band because of Ag 4d and O 2p orbital interactions, shifting the Fermi level toward the valence band. At least, Ag-doped ZnO vertically aligned nanowire arrays have been epitaxially grown on GaN(001) substrate. The heterostructure has been inserted in a light emitting device. UV-blue light emission has been achieved with a low emission threshold of 5 V and a tunable red-shifted emission spectrum related to the bandgap reduction induced by silver doping of the ZnO emitter material. PMID:25990263

  12. In-situ optical transmission electron microscope study of exciton phonon replicas in ZnO nanowires by cathodoluminescence

    SciTech Connect

    Yang, Shize; Tian, Xuezeng; Wang, Lifen; Wei, Jiake; Qi, Kuo; Li, Xiaomin; Xu, Zhi E-mail: xdbai@iphy.ac.cn Wang, Wenlong; Zhao, Jimin; Bai, Xuedong E-mail: xdbai@iphy.ac.cn; Wang, Enge E-mail: xdbai@iphy.ac.cn

    2014-08-18

    The cathodoluminescence spectrum of single zinc oxide (ZnO) nanowires is measured by in-situ optical Transmission Electron Microscope. The coupling between exciton and longitudinal optical phonon is studied. The band edge emission varies for different excitation spots. This effect is attributed to the exciton propagation along the c axis of the nanowire. Contrary to free exciton emission, the phonon replicas are well confined in ZnO nanowire. They travel along the c axis and emit at the end surface. Bending strain increases the relative intensity of second order phonon replicas when excitons travel along the c-axis.

  13. Integration of ZnO and CuO nanowires into a thermoelectric module.

    PubMed

    Zappa, Dario; Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

    2014-01-01

    Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices. PMID:24991531

  14. High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires

    PubMed Central

    2011-01-01

    We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k·p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the XC excitonic transition. PACS: 78.55.Cr, 77.22.Ej, 81.07.Gf. PMID:21854578

  15. Integration of ZnO and CuO nanowires into a thermoelectric module

    PubMed Central

    Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

    2014-01-01

    Summary Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices. PMID:24991531

  16. Role of ZnO thin film in the vertically aligned growth of ZnO nanorods by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Son, Nguyen Thanh; Noh, Jin-Seo; Park, Sungho

    2016-08-01

    The effect of ZnO thin film on the growth of ZnO nanorods was investigated. ZnO thin films were sputter-deposited on Si substrate with varying the thickness. ZnO nanorods were grown on the thin film using a chemical bath deposition (CBD) method at 90 °C. The ZnO thin films showed granular structure and vertical roughness on the surface, which facilitated the vertical growth of ZnO nanorods. The average grain size and the surface roughness of ZnO film increased with an increase in film thickness, and this led to the increase in both the average diameter and the average length of vertically grown ZnO nanorods. In particular, it was found that the average diameter of ZnO nanorods was very close to the average grain size of ZnO thin film, confirming the role of ZnO film as a seed layer for the vertical growth of ZnO nanorods. The CBD growth on ZnO seed layers may provide a facile route to engineering vertically aligned ZnO nanorod arrays.

  17. Flow-enabled self-assembly of large-scale aligned nanowires.

    PubMed

    Li, Bo; Zhang, Chuchu; Jiang, Beibei; Han, Wei; Lin, Zhiqun

    2015-03-27

    One-dimensional nanowires enable the realization of optical and electronic nanodevices that may find applications in energy conversion and storage systems. Herein, large-scale aligned DNA nanowires were crafted by flow-enabled self-assembly (FESA). The highly oriented and continuous DNA nanowires were then capitalized on either as a template to form metallic nanowires by exposing DNA nanowires that had been preloaded with metal salts to an oxygen plasma or as a scaffold to direct the positioning and alignment of metal nanoparticles and nanorods. The FESA strategy is simple and easy to implement and thus a promising new method for the low-cost synthesis of large-scale one-dimensional nanostructures for nanodevices. PMID:25689374

  18. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    SciTech Connect

    Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng; Chen, Jun; Li, Ziping; She, Juncong; Deng, Shaozhi; Xu, Ningsheng

    2015-12-14

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

  19. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    NASA Astrophysics Data System (ADS)

    Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng; Li, Ziping; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2015-12-01

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18-20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

  20. Hierarchically structured nanowires on and nanosticks in ZnO microtubes

    PubMed Central

    Rivaldo-Gómez, C. M.; Cabrera-Pasca, G. A.; Zúñiga, A.; Carbonari, A. W.; Souza, J. A.

    2015-01-01

    We report both coaxial core-shell structured microwires and ZnO microtubes with growth of nanosticks in the inner and nanowires on the outer surface as a novel hierarchical micro/nanoarchitecture. First, a core-shell structure is obtained—the core is formed by metallic Zn and the semiconducting shell is comprised by a thin oxide layer covered with a high density of nanowires. Such Zn/ZnO core-shell array showed magnetoresistance effect. It is suggested that magnetic moments in the nanostructured shell superimposes to the external magnetic field enhancing the MR effect. Second, microtubes decorated with nanowires on the external surface are obtained. In an intermediate stage, a hierarchical morphology comprised of discrete nanosticks in the inner surface of the microtube has been found. Hyperfine interaction measurements disclosed the presence of confined metallic Zn regions at the interface between linked ZnO grains forming a chain and a ZnO thicker layer. Surprisingly, the metallic clusters form highly textured thin flat regions oriented parallel to the surface of the microtube as revealed by the electrical field gradient direction. The driving force to grow the internal nanosticks has been ascribed to stress-induced migration of Zn ions due to compressive stress caused by the presence of these confined regions. PMID:26456527

  1. Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Xia, Minggang; Cheng, Zhaofang; Han, Jinyun; Zheng, Minrui; Sow, Chorng-Haur; Thong, John T. L.; Zhang, Shengli; Li, Baowen

    2014-05-01

    The electrical and thermal conductivities are measured for individual zinc oxide (ZnO) nanowires with and without gallium ion (Ga+) implantation at room temperature. Our results show that Ga+ implantation enhances electrical conductivity by one order of magnitude from 1.01 × 103 Ω-1m-1 to 1.46 × 104 Ω-1m-1 and reduces its thermal conductivity by one order of magnitude from 12.7 Wm-1K-1 to 1.22 Wm-1K-1 for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga+ implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga+ point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga+-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

  2. Fabrication and photoresponse of ZnO nanowires/CuO coaxial heterojunction

    PubMed Central

    2013-01-01

    The fabrication and properties of n-ZnO nanowires/p-CuO coaxial heterojunction (CH) with a photoresist (PR) blocking layer are reported. In our study, c-plane wurtzite ZnO nanowires were grown by aqueous chemical method, and monoclinic CuO (111) was then coated on the ZnO nanowires by electrochemical deposition to form CH. To improve the device performance, a PR layer was inserted between the ZnO buffer layer and the CuO film to serve as a blocking layer to block the leakage current. Structural investigations of the CH indicate that the sample has good crystalline quality. It was found that our refined structure possesses a better rectifying ratio and smaller reverse leakage current. As there is a large on/off ratio between light on and off and the major light response is centered at around 424 nm, the experimental results suggest that the PR-inserted ZnO/CuO CH can be used as a good narrow-band blue light detector. PMID:24044381

  3. Wireless Remote Monitoring of Glucose Using a Functionalized ZnO Nanowire Arrays Based Sensor

    PubMed Central

    Ali, Syed M. Usman; Aijazi, Tasuif; Axelsson, Kent; Nur, Omer; Willander, Magnus

    2011-01-01

    This paper presents a prototype wireless remote glucose monitoring system interfaced with a ZnO nanowire arrays-based glucose sensor, glucose oxidase enzyme immobilized onto ZnO nanowires in conjunction with a Nafion® membrane coating, which can be effectively applied for the monitoring of glucose levels in diabetics. Global System for Mobile Communications (GSM) services like General Packet Radio Service (GPRS) and Short Message Service (SMS) have been proven to be logical and cost effective methods for gathering data from remote locations. A communication protocol that facilitates remote data collection using SMS has been utilized for monitoring a patient’s sugar levels. In this study, we demonstrate the remote monitoring of the glucose levels with existing GPRS/GSM network infra-structures using our proposed functionalized ZnO nanowire arrays sensors integrated with standard readily available mobile phones. The data can be used for centralized monitoring and other purposes. Such applications can reduce health care costs and allow caregivers to monitor and support to their patients remotely, especially those located in rural areas. PMID:22164087

  4. Aligned epitaxial SnO2 nanowires on sapphire: growth and device applications.

    PubMed

    Wang, Xiaoli; Aroonyadet, Noppadol; Zhang, Yuzheng; Mecklenburg, Matthew; Fang, Xin; Chen, Haitian; Goo, Edward; Zhou, Chongwu

    2014-06-11

    Semiconducting SnO2 nanowires have been used to demonstrate high-quality field-effect transistors, optically transparent devices, photodetectors, and gas sensors. However, controllable assembly of rutile SnO2 nanowires is necessary for scalable and practical device applications. Here, we demonstrate aligned, planar SnO2 nanowires grown on A-plane, M-plane, and R-plane sapphire substrates. These parallel nanowires can reach 100 μm in length with sufficient density to be patterned photolithographically for field-effect transistors and sensor devices. As proof-of-concept, we show that transistors made this way can achieve on/off current ratios on the order of 10(6), mobilities around 71.68 cm(2)/V·s, and sufficiently high currents to drive external organic light-emitting diode displays. Furthermore, the aligned SnO2 nanowire devices are shown to be photosensitive to UV light with the capability to distinguish between 254 and 365 nm wavelengths. Their alignment is advantageous for polarized UV light detection; we have measured a polarization ratio of photoconductance (σ) of 0.3. Lastly, we show that the nanowires can detect NO2 at a concentration of 0.2 ppb, making them a scalable, ultrasensitive gas sensing technology. Aligned SnO2 nanowires offer a straightforward method to fabricate scalable SnO2 nanodevices for a variety of future electronic applications. PMID:24837617

  5. MOCVD growth of vertically aligned InGaN nanowires

    NASA Astrophysics Data System (ADS)

    Kuo, H. C.; Su Oh, Tae; Ku, P.-C.

    2013-05-01

    In this work, we report the growth of vertically aligned bulk InGaN nanowires (NWs) on r-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). Through the optimization process of growth conditions, such as growth temperature and pressure, we obtained high density InGaN NWs consisting of one (0001) polar- and two equivalent {1101} semi-polar planes. We have shown the highest InGaN NWs wire density of 8×108 cm-2,with an average diameter of 300 nm and a length of 2 μm. From results of photoluminescence (PL) at 30 K and 300 K, we observed the intense and broad emission peak from InGaN NWs at around 595 nm, and confirmed that the luminescence could be tuned from 580 nm to 660 nm by controlling the indium flow (TMIn) rate. Our results indicate that MOCVD-grown InGaN NWs can be effective absorbers of the blue-green range of solar spectrum and may be one of the good candidates for high efficiency photovoltaic devices targeting at blue-green photons.

  6. Thermal Conduction in Vertically Aligned Copper Nanowire Arrays and Composites.

    PubMed

    Barako, Michael T; Roy-Panzer, Shilpi; English, Timothy S; Kodama, Takashi; Asheghi, Mehdi; Kenny, Thomas W; Goodson, Kenneth E

    2015-09-01

    The ability to efficiently and reliably transfer heat between sources and sinks is often a bottleneck in the thermal management of modern energy conversion technologies ranging from microelectronics to thermoelectric power generation. These interfaces contribute parasitic thermal resistances that reduce device performance and are subjected to thermomechanical stresses that degrade device lifetime. Dense arrays of vertically aligned metal nanowires (NWs) offer the unique combination of thermal conductance from the constituent metal and mechanical compliance from the high aspect ratio geometry to increase interfacial heat transfer and device reliability. In the present work, we synthesize copper NW arrays directly onto substrates via templated electrodeposition and extend this technique through the use of a sacrificial overplating layer to achieve improved uniformity. Furthermore, we infiltrate the array with an organic phase change material and demonstrate the preservation of thermal properties. We use the 3ω method to measure the axial thermal conductivity of freestanding copper NW arrays to be as high as 70 W m(-1) K(-1), which is more than an order of magnitude larger than most commercial interface materials and enhanced-conductivity nanocomposites reported in the literature. These arrays are highly anisotropic, and the lateral thermal conductivity is found to be only 1-2 W m(-1) K(-1). We use these measured properties to elucidate the governing array-scale transport mechanisms, which include the effects of morphology and energy carrier scattering from size effects and grain boundaries. PMID:26284489

  7. Thermal growth and cathodoluminescence of Bi doped ZnO nanowires and rods

    NASA Astrophysics Data System (ADS)

    Alemán, B.; Hidalgo, P.; Fernández, P.; Piqueras, J.

    2009-11-01

    Bi doped ZnO nanowires and rods have been grown by a catalyst free evaporation-deposition method with precursors containing either ZnO and Bi2O3 or ZnS and Bi2O3 powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15-0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I-V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.

  8. [101̅0] oriented multichannel ZnO nanowire arrays with enhanced optoelectronic device performance.

    PubMed

    He, Dongqing; Sheng, Xia; Yang, Jie; Chen, Liping; Zhu, Kai; Feng, Xinjian

    2014-12-01

    Crystallographic orientation and microstructure of metal oxide nanomaterials have great impact on their properties and applications. Here, we report [101̅0] oriented ZnO nanowire (NW) arrays with a multichannel mesostructure. The NW has a preferential growth of low energy (101̅0) crystal plane and exhibits 2-3 orders of magnitude faster electron transport rate than that in nanoparticle (NP) films. Furthermore, the surface area of the as-prepared NW arrays is about 5 times larger than that of conventional NW arrays with similar thickness. These lead to the highest power conversion efficiency of ZnO NW array-based sensitized solar cells. We anticipate that the unique crystallographic orientation and mesostructure will endow ZnO NW arrays new properties and expand their application fields. PMID:25411922

  9. Tuning of structural, optical, and magnetic properties of ultrathin and thin ZnO nanowire arrays for nano device applications

    NASA Astrophysics Data System (ADS)

    Shrama, Satinder K.; Saurakhiya, Neelam; Barthwal, Sumit; Kumar, Rudra; Sharma, Ashutosh

    2014-03-01

    One-dimensional (1-D) ultrathin (15 nm) and thin (100 nm) aligned 1-D (0001) and ([InlineEquation not available: see fulltext.]) oriented zinc oxide (ZnO) nanowire (NW) arrays were fabricated on copper substrates by one-step electrochemical deposition inside the pores of polycarbonate membranes. The aspect ratio dependence of the compressive stress because of the lattice mismatch between NW array/substrate interface and crystallite size variations is investigated. X-ray diffraction results show that the polycrystalline ZnO NWs have a wurtzite structure with a = 3.24 Å, c = 5.20 Å, and [002] elongation. HRTEM and SAED pattern confirmed the polycrystalline nature of ultrathin ZnO NWs and lattice spacing of 0.58 nm. The crystallite size and compressive stress in as-grown 15- and 100-nm wires are 12.8 nm and 0.2248 GPa and 22.8 nm and 0.1359 GPa, which changed to 16.1 nm and 1.0307 GPa and 47.5 nm and 1.1677 GPa after annealing at 873 K in ultrahigh vacuum (UHV), respectively. Micro-Raman spectroscopy showed that the increase in E2 (high) phonon frequency corresponds to much higher compressive stresses in ultrathin NW arrays. The minimum-maximum magnetization magnitude for the as-grown ultrathin and thin NW arrays are approximately 8.45 × 10-3 to 8.10 × 10-3 emu/g and approximately 2.22 × 10-7 to 2.190 × 10-7 emu/g, respectively. The magnetization in 15-nm NW arrays is about 4 orders of magnitude higher than that in the 100 nm arrays but can be reduced greatly by the UHV annealing. The origin of ultrathin and thin NW array ferromagnetism may be the exchange interactions between localized electron spin moments resulting from oxygen vacancies at the surfaces of ZnO NWs. The n-type conductivity of 15-nm NW array is higher by about a factor of 2 compared to that of the 100-nm ZnO NWs, and both can be greatly enhanced by UHV annealing. The ability to tune the stresses and the structural and relative occupancies of ZnO NWs in a wide range by annealing has important

  10. The Modulation of Optical Property and its Correlation with Microstructures of ZnO Nanowires

    PubMed Central

    2009-01-01

    ZnO nanowires with both good crystallinity and oxygen vacancies defects were synthesized by thermal oxidation of Zn substrate pretreated in concentrated sulfuric acid under the air atmosphere, Ar- and air-mixed gas stream. The photoluminescence spectra reveal that only near-band-edge (NBE) emission peak was observed for the sample grown in the air atmosphere; the broad blue–green and the red-shifted NBE emission peaks were observed for the sample grown in the mixed gas stream, indicating that the sample grown in the mixed gas stream has a defective structure and its optical properties can be modulated by controlling its structure. The high-resolution transmission electron microscope and the corresponding structural simulation confirm that the oxygen vacancies exist in the crystal of the nanowires grown in the mixed gas stream. The ZnO nanowires with oxygen vacancies defects exhibit better photocatalytic activity than the nanowires with good crystallinity. The photocatalytic process obeys the rules of first-order kinetic reaction, and the rate constants were calculated. PMID:20596485

  11. MOF-Based Membrane Encapsulated ZnO Nanowires for Enhanced Gas Sensor Selectivity.

    PubMed

    Drobek, Martin; Kim, Jae-Hun; Bechelany, Mikhael; Vallicari, Cyril; Julbe, Anne; Kim, Sang Sub

    2016-04-01

    Gas sensors are of a great interest for applications including toxic or explosive gases detection in both in-house and industrial environments, air quality monitoring, medical diagnostics, or control of food/cosmetic properties. In the area of semiconductor metal oxides (SMOs)-based sensors, a lot of effort has been devoted to improve the sensing characteristics. In this work, we report on a general methodology for improving the selectivity of SMOx nanowires sensors, based on the coverage of ZnO nanowires with a thin ZIF-8 molecular sieve membrane. The optimized ZnO@ZIF-8-based nanocomposite sensor shows markedly selective response to H2 in comparison with the pristine ZnO nanowires sensor, while showing the negligible sensing response to C7H8 and C6H6. This original MOF-membrane encapsulation strategy applied to nanowires sensor architecture pave the way for other complex 3D architectures and various types of applications requiring either gas or ion selectivity, such as biosensors, photo(catalysts), and electrodes. PMID:27003470

  12. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties.

    PubMed

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-01-01

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA. PMID:27023546

  13. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties

    PubMed Central

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-01-01

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA. PMID:27023546

  14. Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

    NASA Astrophysics Data System (ADS)

    Yang, Zhi; Wang, Minqiang; Shukla, Sudhanshu; Zhu, Yue; Deng, Jianping; Ge, Hu; Wang, Xingzhi; Xiong, Qihua

    2015-06-01

    A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications.

  15. Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

    PubMed Central

    Yang, Zhi; Wang, Minqiang; Shukla, Sudhanshu; Zhu, Yue; Deng, Jianping; Ge, Hu; Wang, Xingzhi; Xiong, Qihua

    2015-01-01

    A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications. PMID:26077658

  16. Spontaneous shape transition of thin films into ZnO nanowires with high structural and optical quality.

    PubMed

    Guillemin, Sophie; Sarigiannidou, Eirini; Appert, Estelle; Donatini, Fabrice; Renou, Gilles; Bremond, Georges; Consonni, Vincent

    2015-10-28

    ZnO nanowires are usually formed by physical and chemical deposition techniques following the bottom-up approach consisting in supplying the reactants on a nucleation surface heated at a given temperature. We demonstrate an original alternative approach for the formation of ZnO nanowire arrays with high structural and optical quality, which is based on the spontaneous transformation of a ZnO thin film deposited by sol-gel process following a simple annealing. The development of these ZnO nanowires occurs through successive shape transitions, including the intermediate formation of pyramid-shaped islands. Their nucleation under near-equilibrium conditions is expected to be governed by thermodynamic considerations via the total free energy minimization related to the nanowire shape. It is further strongly assisted by the drastic reordering of the matter and by recrystallization phenomena through the massive transport of zinc and oxygen atoms towards the localized growth areas. The spontaneous shape transition process thus combines the easiness and low-cost of sol-gel process and simple annealing with the assets of the vapor phase deposition techniques. These findings cast a light on the fundamental mechanisms driving the spontaneous formation of ZnO nanowires and, importantly, reveal the great technological potential of the spontaneous shape transition process as a promising alternative approach to the more usual bottom-up approach. PMID:26416227

  17. Length-dependent charge generation from vertical arrays of high-aspect-ratio ZnO nanowires.

    PubMed

    Rivera, Vivian Farías; Auras, Florian; Motto, Paolo; Stassi, Stefano; Canavese, Giancarlo; Celasco, Edvige; Bein, Thomas; Onida, Barbara; Cauda, Valentina

    2013-10-18

    Aqueous chemical growth of zinc oxide nanowires is a flexible and effective approach to obtain dense arrays of vertically oriented nanostructures with high aspect ratio. Herein we present a systematic study of the different synthesis parameters that influence the ZnO seed layer and thus the resulting morphological features of the free-standing vertically oriented ZnO nanowires. We obtained a homogeneous coverage of transparent conductive substrates with high-aspect-ratio nanowire arrays (length/diameter ratio of up to 52). Such nanostructured vertical arrays were examined to assess their electric and piezoelectric properties, and showed an electric charge generation upon mechanical compressive stress. The principle of energy harvesting with these nanostructured ZnO arrays was demonstrated by connecting them to an electronic charge amplifier and storing the generated charge in a series of capacitors. We found that the generated charge and the electrical behavior of the ZnO nanowires are strictly dependent on the nanowire length. We have shown the importance of controlling the morphological properties of such ZnO nanostructures for optimizing a nanogenerator device. PMID:24027171

  18. Scalable alignment and transfer of nanowires in a Spinning Langmuir Film.

    PubMed

    Zhu, Ren; Lai, Yicong; Nguyen, Vu; Yang, Rusen

    2014-10-21

    Many nanomaterial-based integrated nanosystems require the assembly of nanowires and nanotubes into ordered arrays. A generic alignment method should be simple and fast for the proof-of-concept study by a researcher, and low-cost and scalable for mass production in industries. Here we have developed a novel Spinning-Langmuir-Film technique to fulfill both requirements. We used surfactant-enhanced shear flow to align inorganic and organic nanowires, which could be easily transferred to other substrates and ready for device fabrication in less than 20 minutes. The aligned nanowire areal density can be controlled in a wide range from 16/mm(-2) to 258/mm(-2), through the compression of the film. The surface surfactant layer significantly influences the quality of alignment and has been investigated in detail. PMID:25177924

  19. In situ observation of size-scale effects on the mechanical properties of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Asthana, A.; Momeni, K.; Prasad, A.; Yap, Y. K.; Yassar, R. S.

    2011-07-01

    In this investigation, the size-scale in mechanical properties of individual [0001] ZnO nanowires and the correlation with atomic-scale arrangements were explored via in situ high-resolution transmission electron microscopy (TEM) equipped with atomic force microscopy (AFM) and nanoindentation (NI) systems. The Young's modulus was determined to be size-scale-dependent for nanowires with diameter, d, in the range of 40 nm <= d <= 110 nm, and reached the maximum of ~ 249 GPa for d = 40 nm. However, this phenomenon was not observed for nanowires in the range of 200 nm <= d <= 400 nm, where an average constant Young's modulus of ~ 147.3 GPa was detected, close to the modulus value of bulk ZnO. A size-scale dependence in the failure of nanowires was also observed. The thick ZnO nanowires (d >= 200 nm) were brittle, while the thin nanowires (d <= 110 nm) were highly flexible. The diameter effect and enhanced Young's modulus observed in thin ZnO nanowires are due to the combined effects of surface relaxation and long-range interactions present in ionic crystals, which leads to much stiffer surfaces than bulk wires. The brittle failure in thicker ZnO wires was initiated from the outermost layer, where the maximum tensile stress operates and propagates along the (0001) planes. After a number of loading and unloading cycles, the highly compressed region of the thinner nanowires was transformed from a crystalline to an amorphous phase, and the region near the neutral zone was converted into a mixture of disordered atomic planes and bent lattice fringes as revealed by high-resolution images.

  20. Plasmon-mediated photocatalytic activity of wet-chemically prepared ZnO nanowire arrays.

    PubMed

    Dao, Thang Duy; Han, Gui; Arai, Nono; Nabatame, Toshihide; Wada, Yoshiki; Hoang, Chung Vu; Aono, Masakazu; Nagao, Tadaaki

    2015-03-21

    We report on measurements and simulations of the efficient sunlight-driven and visible-active photocatalysts composed of plasmonic metal nanoparticles and ZnO nanowire (NW) arrays fabricated via an all-wet-chemical route. Because of the coupling between the ZnO dielectric response and the excitation of the Ag or Au nanoparticles, efficient electronic excitation can be induced in the vicinity of the metal-ZnO interfaces because optically-excited plasmonic particles can not only concentrate the electromagnetic field at the ZnO/particle interface, but also act as efficient sources of plasmonic hot electrons to be injected into the conduction band of the ZnO catalyst. The catalytic activities of the fabricated ZnO NWs are examined by photodegradation of methylene blue and by photocurrent measurements in a photovoltaic configuration. Numerical electromagnetic simulations were used to understand the behavior of the light on the nanometer-scale to clarify the catalytic enhancement mechanisms in both the ultraviolet (UV) and visible (VIS) regions. In addition, simulation results indicated that a near-surface normal but slightly tilted ZnO NW array geometry would provide an increased optical path length and enhanced multiple scattering and absorption processes arising from the localized surface plasmon resonances of the nanoparticles. The results obtained here clarify the role of the plasmon resonance and provide us with useful knowledge for the development of metal-oxide nano-hybrid materials for solar energy conversion. PMID:25700130

  1. ZnO Nanowires for PV: Size Control and Scalability Studies

    NASA Astrophysics Data System (ADS)

    Gunther, Darlene; Lawrie, Jenifer; Ueda, Akira; Mu, Richard

    2007-11-01

    Our research attempts to understand the carbothermal vapor- solid growth process for novel ZnO nanowires (NW's). In addition to being a relatively simple growth process, the ZnO NW's, most often n- type, have high electron mobility and a large bandgap (3.4 eV). This makes them an attractive electron conductor. Our team expects these ZnO NW's to provide a means of reducing the charge recombination problems currently hampering the efficiencies of photovoltaic (PV) cells. Current growth methods are limited to small sample sizes in a horizontal tube furnace. We propose an innovative vertical design that provides optimal control of the growth parameters, allowing us to study each of the factors to determine their role in growing the required ZnO structures, e.g. gas flow turbulence, oxygen supply, distance from source to substrate, temperature control and uniform density. We report the results of our initial experiments where we grew dense ZnO nw's on a large (11.3 x 44.8 mm) silicon substrate (100).

  2. Electro-physical characterization of individual and arrays of ZnO nanowires

    SciTech Connect

    Mallampati, Bhargav; Singh, Abhay; Philipose, U.; Shik, Alex; Ruda, Harry E.

    2015-07-21

    Capacitance measurements were made on an array of parallel ZnO nanowires embedded in a polymer matrix and provided with two electrodes perpendicular to the nanowires. The capacitance monotonically increased, and saturated at large negative (depleting) and large positive (accumulating) voltages. A qualitative explanation for this behavior is presented, taking into account specific features of quasi-one-dimensional screening. The increasing or decreasing character of the capacitance-voltage characteristics were determined by the conductivity type of the nanowires, which in our case was n-type. A dispersion of the experimental capacitance was observed over the entire frequency range of 1 kHz to 5 MHz. This phenomenon is explained by the slow discharge of the nanowires through the thin dielectric layer that separates them from the top electrode. Separate measurements on individual identical nanowires in a field effect transistor configuration yielded an electron concentration and mobility of approximately 10{sup 17 }cm{sup −3} and 150 cm{sup 2}/Vs, respectively, at room temperature.

  3. Solution Processing of Ordered Thin Film Nanowire Composites by Magnetic Field Alignment

    NASA Astrophysics Data System (ADS)

    Singer, Jonathan; Pelligra, Candice; Huang, Su; Osuji, Chinedum

    2014-03-01

    Vertically aligned nanowire forests are a desirable geometry for many applications, including as electrodes, heterojunctions, and high surface energy interfaces. Most conventional aligned nanowire structures, however, are generated by methods that require (i) high temperatures, (ii) a specific substrate, or (iii) high cost lithographic techniques. We seek to utilize the magnetic alignment of cobalt-doped zinc oxide nanowires to enable the solution processing of thin films of aligned nanowires on a generalized substrate at a fraction of the cost of other methods. By functionalization of the nanowires with various surface modifications, they can be dispersed in several solvent systems and aligned by a 6 T field. Further, by including polymer in the wire solution, we can both control the areal density and also incorporate additional functionalities to the final composite device. As an example, the use of a conjugated polymer (such as poly(3-hexylthiophene-2,5-diyl) (P3HT)) allows for the final structures to act as inorganic-organic ordered heterojunction solar cells. While final device quality depends on the simultaneous optimization of several key processing parameters, the process does not rely on top-down fabrication or costly materials. Supported by ONR YIP Award N000141210657.

  4. Fast and enhanced broadband photoresponse of a ZnO nanowire array/reduced graphene oxide film hybrid photodetector from the visible to the near-infrared range.

    PubMed

    Liu, Hao; Sun, Qi; Xing, Jie; Zheng, Zhiyuan; Zhang, Zhili; Lü, Zhiqing; Zhao, Kun

    2015-04-01

    In the present work, a ZnO nanowire array/reduced graphene oxide film hybrid nanostructure was realized, and the photovoltaic responses from the visible to the near-infrared range were investigated. Compared with the pure ZnO nanowire array and rGO thin film, the hybrid composite exhibited a fast and greatly enhanced broadband photovoltaic response that resulted from the formation of interfacial Schottky junctions between ZnO and rGO. PMID:25768384

  5. Low-Frequency Self-Powered Footstep Sensor Based on ZnO Nanowires on Paper Substrate.

    PubMed

    Nour, E S; Bondarevs, A; Huss, P; Sandberg, M; Gong, S; Willander, M; Nur, O

    2016-12-01

    In this work, we design and fabricate a wireless system with the main operating device based on zinc oxide (ZnO) nanowires. The main operating device is based on piezoelectric nanogenerator (NG) achieved using ZnO nanowires grown hydrothermally on paper substrate. The fabricated NG is capable of harvesting ambient mechanical energy from various kinds of human motion, e.g., footsteps. The harvested electric output has been used to serve as a self-powered pressure sensor. Without any storage device, the signal from a single footstep has successfully triggered a wireless sensor node circuit. This study demonstrates the feasibility of using ZnO nanowire piezoelectric NG as a low-frequency self-powered sensor, with potential applications in wireless sensor networks. PMID:27000024

  6. Low-Frequency Self-Powered Footstep Sensor Based on ZnO Nanowires on Paper Substrate

    NASA Astrophysics Data System (ADS)

    Nour, E. S.; Bondarevs, A.; Huss, P.; Sandberg, M.; Gong, S.; Willander, M.; Nur, O.

    2016-03-01

    In this work, we design and fabricate a wireless system with the main operating device based on zinc oxide (ZnO) nanowires. The main operating device is based on piezoelectric nanogenerator (NG) achieved using ZnO nanowires grown hydrothermally on paper substrate. The fabricated NG is capable of harvesting ambient mechanical energy from various kinds of human motion, e.g., footsteps. The harvested electric output has been used to serve as a self-powered pressure sensor. Without any storage device, the signal from a single footstep has successfully triggered a wireless sensor node circuit. This study demonstrates the feasibility of using ZnO nanowire piezoelectric NG as a low-frequency self-powered sensor, with potential applications in wireless sensor networks.

  7. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer

    NASA Astrophysics Data System (ADS)

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  8. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

    PubMed

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene. PMID:24407201

  9. Piezotronic effect in solution-grown p-type ZnO nanowires and films.

    PubMed

    Pradel, Ken C; Wu, Wenzhuo; Zhou, Yusheng; Wen, Xiaonan; Ding, Yong; Wang, Zhong Lin

    2013-06-12

    Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the p-type nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10(5), 2.1 V, 0.82 cm(2)·V(-1)·s(-1), and 2.6 × 10(17) cm(-3), respectively, and the corresponding values for 1% Sb doped samples are 10(4), 2.0 V, 1.24 cm(2)·V(-1)·s(-1), and 3.8 × 10(17) cm(-3). We further investigated the universality of piezotronic effect in the as-synthesized Sb-doped p-type ZnO NWs and reported for the first time strain-gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution-grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing. PMID:23635319

  10. Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

    SciTech Connect

    Zhang, H.; Lavenus, P.; Julien, F. H.; Tchernycheva, M.; Babichev, A. V.; Jacopin, G.; Egorov, A. Yu.

    2013-12-21

    We report the demonstration of a ZnO nanowire ultraviolet photodetector with a top transparent electrode made of a few-layered graphene sheet. The nanowires have been synthesized using a low-cost electrodeposition method. The detector is shown to be visible-blind and to present a responsivity larger than 10{sup 4} A/W in the near ultraviolet range thanks to a high photoconductive gain in ZnO nanowires. The device exhibits a peak responsivity at 370 nm wavelength and shows a sub bandgap response down to 415 nm explained by an Urbach tail with a characteristic energy of 83 meV. The temporal response of the detector and the power dependence are discussed. A model of the photoconductive mechanism is proposed showing that the main process responsible for the photoconductive gain is the modulation of the conducting surface due to the variation of the surface depletion layer and not the reduction of recombination efficiency stemming from the electron-hole spatial separation. The gain is predicted to decrease at high incident power due to the flattening of the lateral band bending in agreement with experimental data.

  11. Shadow mask assisted direct growth of ZnO nanowires as a sensing medium for surface acoustic wave devices using a thermal evaporation method

    NASA Astrophysics Data System (ADS)

    Achath Mohanan, Ajay; Parthiban, R.; Ramakrishnan, N.

    2016-02-01

    Zinc oxide (ZnO) nanowires were directly synthesized on high temperature stable one-port surface acoustic wave (SAW) resonators made of LiNbO3 substrate and Pt/Ti electrodes using a self-seeding catalyst-free thermal evaporation method. To enhance post-growth device functionality, one half of an SAW resonator was masked along the interdigital transducer aperture length during the nanowire growth process using a stainless steel shadow mask, while the other half was used as the ZnO nanowire growth site. This was achieved by employing a precisely machined stainless steel sleeve to house the chip and mask in the reaction chamber during the nanowire growth process. The ZnO nanowire integrated SAW resonator exhibited ultraviolet radiation sensing abilities which indicated that the ZnO nanowires grown on the SAW device were able to interact with SAW propagation on the substrate even after the device was exposed to extremely harsh conditions during the nanowire growth process. The use of a thermal evaporation method, instead of the conventionally used solution-grown method for direct growth of ZnO nanowires on SAW devices, paves the way for future methods aimed at the fabrication of highly sensitive ZnO nanowire-LiNbO3 based SAW sensors utilizing coupled resonance phenomenon at the nanoscale.

  12. Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation

    SciTech Connect

    Liao, L.; Zhang, Z.; Yan, B.; Li, G. P.; Wu, T.; Shen, Z. X.; Yu, T.; Yang, Y.; Cao, H. T.; Chen, L. L.; Tay, B. K.; Sun, X. W.

    2008-10-01

    Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n-type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4x10{sup 2} to 3.3x10{sup -3} {omega} cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75x10{sup 7} A/cm{sup 2}. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.

  13. Effect of Sb-doping on the morphology and dielectric properties of chrysanthemum-like ZnO nanowire clusters

    NASA Astrophysics Data System (ADS)

    Yan, Jun-Feng; You, Tian-Gui; Zhang, Zhi-Yong; Tian, Jiang-Xiao; Yun, Jiang-Ni; Zhao, Wu

    2012-09-01

    Chrysanthemum-like ZnO nanowire clusters with different Sb-doping concentrations were prepared using a hydrothermal process. The microstructures, morphologies, and dielectric properties of the as-prepared products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM), and microwave vector network analyzer respectively. The results indicate that the as-prepared products are Sb-doped ZnO single crystallines with a hexagonal wurtzite structure, the flower bud saturation degree Fd is obviously different from that of the pure ZnO nanowire clusters, the good dielectric loss property is found in Sb-doped ZnO products with low density, and the dielectric loss tangent tanδe increases with the increase of the Sb-doping concentration in a certain concentration range.

  14. Hydrothermal Synthesis of ZnO Structures Formed by High-Aspect-Ratio Nanowires for Acetone Detection.

    PubMed

    Cao, Zhen; Wang, Yong; Li, Zhanguo; Yu, Naisen

    2016-12-01

    Snowflake-like ZnO structures originating from self-assembled nanowires were prepared by a low-temperature aqueous solution method. The as-grown hierarchical ZnO structures were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The results showed that the snowflake-like ZnO structures were composed of high-aspect-ratio nanowires. Furthermore, gas-sensing properties to various testing gases of 10 and 50 ppm were measured, which confirms that the ZnO structures were of good selectivity and response to acetone and could serve for acetone sensor to detect low-concentration acetone. PMID:27460595

  15. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    SciTech Connect

    Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  16. Exploring the Potential of Turbulent Flow Control Using Vertically Aligned Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Bailey, Sean; Calhoun, John; Guskey, Christopher; Seigler, Michael; Koka, Aneesh; Sodano, Henry

    2012-11-01

    We present evidence that turbulent flow can be influenced by oscillating nanowires. A substrate coated with vertically aligned nanowires was installed in the boundary wall of fully-developed turbulent channel flow, and the substrate was excited by a piezoceramic actuator to oscillate the nanowires. Because the nanowires are immersed in the viscous sublayer, it was previously unclear whether the small scale flow oscillations imparted into the bulk flow by the nanowires would influence the turbulent flow or be dissipated by the effects of viscosity. Our experiments demonstrated that the nanowires produced perturbations in the flow and contributed energy throughout the depth of the turbulent layer. A parallel investigation using a dynamically scaled surface of vertically aligned wires in laminar flow found that, even at low Reynolds numbers, significant momentum transport can be produced in the flow by the introduction of a travelling wave motion into the surface. These findings reflect the potential for using oscillating nanowires as a novel method of near-wall turbulent flow control. This work was supported by the Air Force Office of Scientific Research under FA9550-11-1-0140.

  17. Vertically Aligned ZnO Nanorods: Effect of Synthesis Parameters.

    PubMed

    Rehman, Zeeshan Ur; Heo, Si-Nae; Cho, Hyeon Ji; Koo, Bon Heun

    2016-06-01

    This report is devoted to the synthesis of high quality nanorods using spin coating technique for seed layer growth. Effect of different parameter i.e., spins coating counts, spin coating speed, and the effect of temperature during the drying process was analyzed. Hot plate and furnace technique was used for heating purpose and the difference in the morphology was carefully observed. It is worthy to mention here that there is a substantial effect of all the above mentioned parameters on the growth and morphology of the ZnO nanostructure. The ZnO nanorods were finally synthesized using wet chemical method. The morphological properties of the obtained nanostructures were analyzed by using FESEM technique. PMID:27427752

  18. An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition.

    PubMed

    Subannajui, Kittitat; Güder, Firat; Danhof, Julia; Menzel, Andreas; Yang, Yang; Kirste, Lutz; Wang, Chunyu; Cimalla, Volker; Schwarz, Ulrich; Zacharias, Margit

    2012-06-15

    In this work, the controlled fabrication of highly ordered ZnO nanowire (NW) arrays on silicon substrates is reported. Si NWs fabricated by a combination of phase shift lithography and etching are used as a template and are subsequently substituted by ZnO NWs with a dry-etching technique and atomic layer deposition. This fabrication technique allows the vertical ZnO NWs to be fabricated on 4 in Si wafers. Room temperature photoluminescence and micro-photoluminescence are used to observe the optical properties of the atomic layer deposition (ALD) based ZnO NWs. The sharp UV luminescence observed from the ALD ZnO NWs is unexpected for the polycrystalline nanostructure. Surprisingly, the defect related luminescence is much decreased compared to an ALD ZnO film deposited at the same time ona plane substrate. Electrical characterization was carried out by using nanomanipulators. With the p-type Si substrate and the n-type ZnO NWs the nanodevices represent p–n NW diodes.The nanowire diodes show a very high breakthrough potential which implies that the ALD ZnO NWs can be used for future electronic applications. PMID:22609898

  19. Type II band alignment in InAs zinc-blende/wurtzite heterostructured nanowires.

    PubMed

    Panda, Jaya Kumar; Chakraborty, Arup; Ercolani, Daniele; Gemmi, Mauro; Sorba, Lucia; Roy, Anushree

    2016-10-14

    In this article we demonstrate type-II band alignment at the wurtzite/zinc-blende hetero-interface in InAs polytype nanowires using resonance Raman measurements. Nanowires were grown with an optimum ratio of the above mentioned phases, so that in the electronic band alignment of such NWs the effect of the difference in the crystal structure dominates over other perturbing effects (e.g. interfacial strain, confinement of charge carriers and band bending due to space charge). Experimental results are compared with the band alignment obtained from density functional theory calculations. In resonance Raman measurements, the excitation energies in the visible range probe the band alignment formed by the E 1 gap of wurtzite and zinc-blende phases. However, we expect our claim to be valid also for band alignment near the fundamental gap at the heterointerface. PMID:27586817

  20. Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

    SciTech Connect

    Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G.; Kolobov, A. V.; Fons, P.; Mitrofanov, K. V.; Tominaga, J.; Tamenori, Y.

    2014-05-21

    In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

  1. Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

    NASA Astrophysics Data System (ADS)

    Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Kolobov, A. V.; Mitrofanov, K. V.; Fons, P.; Tominaga, J.; Tamenori, Y.; Feuillet, G.

    2014-05-01

    In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

  2. Catalyst-Free Synthesis of ZnO Nanowires on Oxidized Silicon Substrate for Gas Sensing Applications.

    PubMed

    Behera, B; Chandra, S

    2015-06-01

    In the present work, we report the synthesis of nanostructured ZnO by oxidation of zinc film without using a seed or catalyst layer. The zinc films were deposited on oxidized Si substrates by RF magnetron sputtering process. These were oxidized in dry and wet air/oxygen ambient. The optimized process yielded long nanowires of ZnO having diameter of around 60-70 nm and spread uniformly over the surface. The effect of oxidation temperature, time, Zn film thickness and the ambient has strong influence on the morphology of resulting nanostruxctured ZnO film. The films were characterized by scanning electron microscopy for morphological studies and X-ray diffraction (XRD) analysis to study the phase of the nanostructured ZnO. Room temperature photoluminescence (PL) measurements of the nanowires show UV and green emission. A sensor was designed and fabricated using nanostructured ZnO film, incorporating inter-digital-electrode (IDE) for the measurement of resistance of the sensing layer. The gas sensing properties were investigated from the measurement of change in resistance when exposed to vapours of different volatile organic compound (VOC) such as acetone, ethanol, methanol and 2-propanol. The results suggest that ZnO nanowires fabricated by this method have potential application in gas sensors. PMID:26369077

  3. ZnO nanowire array growth on precisely controlled patterns of inkjet-printed zinc acetate at low-temperatures

    NASA Astrophysics Data System (ADS)

    Tsangarides, Constantinos P.; Ma, Hanbin; Nathan, Arokia

    2016-06-01

    ZnO nanowires have been fabricated through the hydrothermal method on inkjet-printed patterns of zinc acetate dihydrate. The silicon substrate used was heated accordingly during the printing period in order to maintain good spatial uniformity of the zinc acetate nanoparticles, responsible for the pattern morphology. Printing more than one pass of precursor ink leads to an increase in seed layer thickness that subsequently alters the density and dimensions of nanowires. It has been demonstrated that with the right inkjet-printing parameters and substrate temperature, ZnO nanowires can be effortlessly fabricated in accordance with the desired pattern variations under low temperature and mild conditions that ensures promising applications in optoelectronic devices.ZnO nanowires have been fabricated through the hydrothermal method on inkjet-printed patterns of zinc acetate dihydrate. The silicon substrate used was heated accordingly during the printing period in order to maintain good spatial uniformity of the zinc acetate nanoparticles, responsible for the pattern morphology. Printing more than one pass of precursor ink leads to an increase in seed layer thickness that subsequently alters the density and dimensions of nanowires. It has been demonstrated that with the right inkjet-printing parameters and substrate temperature, ZnO nanowires can be effortlessly fabricated in accordance with the desired pattern variations under low temperature and mild conditions that ensures promising applications in optoelectronic devices. Electronic supplementary information (ESI) available: Printing parameters in detail and extra figures. See DOI: 10.1039/c6nr02962k

  4. CL from ZnO nanowires and microneedles Co-doped with N and Mn

    NASA Astrophysics Data System (ADS)

    Herrera, M.; Morales, A.; Díaz, J. A.

    2014-05-01

    Cathodoluminescence (CL) was used to study the luminescence emission of ZnO : N, Mn nanowires and microneedles grown by thermal evaporation. CL spectra acquired at room temperature showed the presence of near band edge and defect-related emissions. The defect related emission comprised two bands centered at 2.28 and 2.5 eV. The first component was attributed to the formation of spinel ZnMn2O4 and the second to the well-known ZnO green emission. CL spectra acquired at 100 K showed two emissions centered at 3.22 and 3.25 eV that were attributed to donor-acceptor pair (DAP) and FA transitions, respectively. It was proposed that substitutional nitrogen (NO) and zinc interstitial (Zni) were acceptor and shallow-donor centers in the DAP transition.

  5. Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures

    NASA Astrophysics Data System (ADS)

    Opoku, Charles; Dahiya, Abhishek Singh; Oshman, Christopher; Cayrel, Frederic; Poulin-Vittrant, Guylaine; Alquier, Daniel; Camara, Nicolas

    Using vertically grown hydrothermal ZnO nanowires, we demonstrate the assembly of fully functional piezoelectric energy harvesters on plastics substrates. A seedless hydrothermal process is employed for the growth of single crystalline vertically orientated ZnO NWs at around 100oC. Flexible NG are assembled using ∼7 μm thick PDMS polymer matrix on a 3x3cm substrate. A representative device with an active area of 4cm2 is characterised revealing average output voltage generation of ∼22mV (±1.2) and -32mV (±0.16) in the positive and negative cycles after 3-4mm periodic deflection at 20Hz. A power density of ∼288nW/cm3 is estimated for the device. It is envisaged that such energy scavengers may find potential applications targeting self-powered systems, sensors and on-body charging of electronics.

  6. Weak localization and electron-electron interactions in indium-doped ZnO nanowires.

    PubMed

    Thompson, Richard S; Li, Dongdong; Witte, Christopher M; Lu, Jia G

    2009-12-01

    Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields with directions both perpendicular and parallel to the wire axes. A quantitative fit of our data is obtained, consistent with the theory of a quasi-one-dimensional metallic system with quantum corrections due to weak localization and electron-electron interactions. The anisotropy of the magneto-conductivity agrees with theory. The two quantum corrections are of approximately equal magnitude with respective temperature dependences of T(-1/3)and T(-1/2). The alternative model of quasi-two-dimensional surface conductivity is excluded by the absence of oscillations in the magneto-conductivity in parallel magnetic fields. PMID:19831413

  7. Direct fabrication of superhydrophobic ceramic surfaces with ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Chung, Jihoon; Lee, Sukyung; Yong, Hyungseok; Lee, Sangmin; Park, Yong Tae

    2016-02-01

    Super-hydrophobic surfaces having contact angles > 150° for water are of great interest due to their potential use in a wide variety of applications. Although many reports on the wettability of different surfaces have been published, few or no studies have been done on the formation of a super-hydrophobic surface on a ceramic substrate. In this paper, we demonstrate the creation of a super-hydrophobic surface on a ceramic substrate by using zinc oxide nanowires (ZnO NWs) prepared by using a direct hydrothermal method. A self-assembled monolayer of heptadecafluoro- 1,1,2,2-tetrahydrodecyl trichlorosilane (HDFS) lowered the surface energy between the water droplet and the nano-textured surface. The length of the ZnO NWs was found to play a key role in the formation of a nanostructure that increased the surface roughness of the substrate. Furthermore, the length of the ZnO NWs could be controlled by changing the growth time, and HDFS-coated ZnO NWs were found to be super-hydrophobic after a growth time of 3 h. We have demonstrated the potential application of this nanostructure for ceramic tableware by introducing a ZnO-NW-textured surface on a ceramic cup, which resulted in water and alcohol repellency. This method is a simple and practical way to achieve a super-hydrophobic surface; hence, our method is expected to be widely used in various ceramic applications.

  8. Plasma enhanced multistate storage capability of single ZnO nanowire based memory

    NASA Astrophysics Data System (ADS)

    Lai, Yunfeng; Xin, Pucong; Cheng, Shuying; Yu, Jinling; Zheng, Qiao

    2015-01-01

    Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on the MSS and the switching properties have been scarcely investigated. We have demonstrated a stable four-state storage capability of single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical switching is attributed to the electron trapping and detrapping from the oxygen vacancies (Vos). The MSS relates to the electrical-thermal induced distribution of the Vos which determines electron transport behavior to show different resistance states. Additionally, programming (set and reset) voltages decrease with plasma treatment due to the thickness modulation of the interface barrier.

  9. Ultrafast spectroscopy of stimulated emission in single ZnO tetrapod nanowires

    NASA Astrophysics Data System (ADS)

    Djurisic, A. B.; Kwok, W. M.; Leung, Y. H.; Chan, W. K.; Phillips, D. L.; Lin, M. S.; Gwo, S.

    2006-01-01

    Stimulated emission from single ZnO tetrapod nanowires was studied by time-resolved photoluminescence (TRPL) spectroscopy. The samples were excited by a 300 fs pulse and the emission spectra collected as a function of time. The spectra exhibit a change in the position and the shape of the emission peak with time. The time evolution of the emission spectra was studied for different pump excitation fluences. The spectra exhibited a blue shift with increasing pump fluence, while for all pump fluences a red shift of the peaks with time was obtained. Possible reasons for the observed behaviour are discussed.

  10. Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

    PubMed

    Sohn, Jung Inn; Choi, Su Seok; Morris, Stephen M; Bendall, James S; Coles, Harry J; Hong, Woong-Ki; Jo, Gunho; Lee, Takhee; Welland, Mark E

    2010-11-10

    We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates. PMID:20945844

  11. A ZnO nanowire-based photo-inverter with pulse-induced fast recovery

    NASA Astrophysics Data System (ADS)

    Ali Raza, Syed Raza; Lee, Young Tack; Hosseini Shokouh, Seyed Hossein; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

    2013-10-01

    We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03801g

  12. ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection

    SciTech Connect

    Wang Guoping; Chu Sheng; Zhan Ning; Liu Jianlin; Lin Yuqing; Chernyak, Leonid

    2011-01-24

    ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.

  13. Aligned ZnO nanorod arrays growth on GaN QDs for excellent optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sang, Dandan; Li, Hongdong; Wang, Qinglin

    2016-02-01

    Uniformly aligned ZnO nanorod (NR) arrays grown on GaN quantum dots (QDs) as preferred nucleation sites are imperative for designing field emission emitters, ultraviolet photodetectors and light-emitting diodes for a wide range of new optoelectronic applications. In a recent study (2015 Nanotechnology 26 415601), Qi et al reported a novel method of fabricating ZnO NRs arrays with uniform shape, the density of which is easily tunable by adjusting the density of GaN QDs. This approach opens a door to obtaining a combination of 0D and 1D structures for optoelectronic applications.

  14. Polymer chain alignment and transistor properties of nanochannel-templated poly(3-hexylthiophene) nanowires

    NASA Astrophysics Data System (ADS)

    Oh, Seungjun; Hayakawa, Ryoma; Pan, Chengjun; Sugiyasu, Kazunori; Wakayama, Yutaka

    2016-08-01

    Nanowires of semiconducting poly(3-hexylthiophene) (P3HT) were produced by a nanochannel-template technique. Polymer chain alignment in P3HT nanowires was investigated as a function of nanochannel widths (W) and polymer chain lengths (L). We found that the ratio between chain length and channel width (L/W) was a key parameter as regards promoting polymer chain alignment. Clear dichroism was observed in polarized ultraviolet-visible (UV-Vis) absorption spectra only at a ratio of approximately L/W = 2, indicating that the L/W ratio must be optimized to achieve uniaxial chain alignment in the nanochannel direction. We speculate that an appropriate L/W ratio is effective in confining the geometries and conformations of polymer chains. This discussion was supported by theoretical simulations based on molecular dynamics. That is, the geometry of the polymer chains, including the distance and tilting angles of the chains in relation to the nanochannel surface, was dominant in determining the longitudinal alignment along the nanochannels. Thus prepared highly aligned polymer nanowire is advantageous for electrical carrier transport and has great potential for improving the device performance of field-effect transistors. In fact, a one-order improvement in carrier mobility was observed in a P3HT nanowire transistor.

  15. Fabrication and characterization of ultraviolet photosensors from ZnO nanowires prepared using chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Al-Asadi, Ahmed S.; Henley, Luke Alexander; Ghosh, Sujoy; Quetz, Abdiel; Dubenko, Igor; Pradhan, Nihar; Balicas, Luis; Perea-Lopez, Nestor; Carozo, Victor; Lin, Zhong; Terrones, Mauricio; Talapatra, Saikat; Ali, Naushad

    2016-02-01

    Highly crystalline zinc oxide (ZnO) nanowires (NWs) were synthesized through chemical bath deposition (CBD) method by using a simple seeding technique. The process includes dispersion of commercially available ZnO nanoparticles through spraying on a desired substrate prior to the CBD growth. A typical growth period of 16 h produced ZnO NW assemblies with an average diameter of ˜45 nm and lengths of 1-1.3 μm, with an optical band gap of ˜3.61 eV. The as-prepared ZnO NWs were photoactive under ultra violet (UV) illumination. Photodetector devices fabricated using these NW assemblies demonstrated a high photoresponse factor of ˜40 and 120 at room temperature under moderate UV illumination power of ˜250 μW/cm2. These findings indicate the possibility of using ZnO NWs, grown using the simple method discussed in this paper, for various opto-electronic applications.

  16. Self-aligned multi-channel silicon nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Zhu, Hao; Li, Qiliang; Yuan, Hui; Baumgart, Helmut; Ioannou, Dimitris E.; Richter, Curt A.

    2012-12-01

    Si nanowire field effect transistors (SiNW FETs) with multiple nanowire channels and different gate lengths have been fabricated by using a directed assembly approach combined with a standard photolithographic process. The electrical characteristics of SiNW FETs containing different numbers of nanowire channels were measured and compared. The multi-channel SiNW FETs show excellent performance: small subthreshold slope (≈75 mV/dec), large ON/OFF ratio (≈108), good break-down voltage (>30 V) and good carrier mobility (μp ≈ 100 cm2 V-1s-1). These excellent device properties were achieved by using a clean self-alignment process and an improved device structure with Schottky barriers at the source and drain contacts. Such high-performance multi-nanowire FETs are attractive for logic, memory, and sensor applications.

  17. Fabrication of Si3N4 nanowire membranes: free standing disordered nanopapers and aligned nanowire assemblies

    NASA Astrophysics Data System (ADS)

    Liu, Haitao; Fang, Minghao; Huang, Zhaohui; Huang, Juntong; Liu, Yan-gai; Wu, Xiaowen

    2016-08-01

    Herein, ultralong silicon nitride nanowires were synthesized via a chemical vapor deposition method by using the low-cost quartz and silicon powder as raw materials. Simple processes were used for the fabrication of disordered and ordered nanowire membranes of pure silicon nitride nanowires. The nanowires in the disordered nanopapers are intertwined with each other to form a paper-like structure which exhibit excellent flame retardancy and mechanical properties. Fourier-transform infrared spectroscopy and thermal gravity analysis were employed to characterize the refractory performance of the disordered nanopapers. Highly ordered nanowire membranes were also assembled through a three-phase assembly approach which make the Si3N4 nanowires have potential use in textured ceramics and semiconductor field. Moreover, the surface nanowires can also be modified to be hydrophobic; this characteristic make the as-prepared nanowires have the potential to be assembled by the more effective Langmuir–Blodgett method and also make the disordered nanopapers possess a super-hydrophobic surface.

  18. Smartly aligning nanowires by a stretching strategy and their application as encoded sensors.

    PubMed

    Wu, Yuchen; Su, Bin; Jiang, Lei

    2012-10-23

    The nanotechnology world is being more and more attracted toward high aspect ratio one-dimensional nanostructures due to their potentials as building blocks for electronic/optical devices. Here, we propose a novel method to generate nanowire patterns with assistance of superhydrophobic flexible polydimethylsiloxane (PDMS) substrates. Micropillar gaps are tunable via a stretching process of the PDMS surface; thus, diverse nanowire patterns can be formed by stretching the same PDMS surface in various ways. Importantly, square nanowire loops with alternative compositions can be generated through a double-stretching process, showing an advanced methodology in controlling the alignment of nanowires. Since alternative fluorescent molecules will be quenched by diverse chemical substances, this alternative nanowire loop shows a selective detection for diverse target compounds, which greatly improves the application of this nanowire patterning approach. Furthermore, such alternative nanowire patterns can be transferred from pillar-structured surfaces to flat films, indicating further potentials in microcircuits, sensitive sensors, and other organic functional nanodevices. PMID:22984829

  19. Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

    PubMed Central

    2014-01-01

    An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively. PMID:25520603

  20. Gate tunable spin exchange interaction and inversion of magnetoresistance in ferromagnetic ZnO nanowire

    NASA Astrophysics Data System (ADS)

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Kim, Jeongyong; Yoo, Jung-Woo

    Tuning magnetism in diluted magnetic semiconductor (DMS) is one of the central issue to the development of future spintronic device applications. Particularly, realizing such control in nanostructure has received growing attention. Here, we report the dramatic change of MR in ferromagnetic ZnO nanowire with varied gate voltages (+50 V to -40 V) at different temperatures (2 K to 50 K). The MR signal was greatly influenced by the gate voltage induced carrier concentrations which results the inversion of MR from positive to negative sign while pertaining the coexistence of both parts before inversion in the range of -2T to 2T. The origin of negative MR is mainly due to spin scattering while the positive one is due to a field induced change in relative populations of conduction bands with different conductivities. The extracted spin exchange related parameter was well tuned with the varied gate voltages at different temperatures. More importantly this type of gate tuning of spin exchange interactions in ferromagnetic single ZnO nanowire is well suitable for future spintronic device applications.

  1. Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

    SciTech Connect

    Ranwa, Sapana; Kumar, Mohit; Kumar, Mahesh; Singh, Jitendra; Fanetti, Mattia

    2015-07-21

    Vertically well aligned ZnO nanorods (NRs) were grown on Si(100) substrate using RF magnetron sputtering technique. Scanning electron microscopy images confirms uniform distribution of NRs on 2 in. wafer with average diameter, height and density being ∼75 nm, ∼850 nm, and ∼1.5 × 10{sup 10} cm{sup −2}, respectively. X-ray diffraction reveals that the ZnO NRs are grown along c-axis direction with wurtzite crystal structure. Cathodoluminescence spectroscopy, which shows a single strong peak around 3.24 eV with full width half maxima 130 meV, indicates the high crystalline and optical quality of ZnO and very low defect density. Vertically aligned nanosensors were fabricated by depositing gold circular Schottky contacts on ZnO NRs. Resistance responses of nanosensors were observed in the range from 50 to 150 °C in 1% and 5% hydrogen in argon environment, which is below and above the explosive limit (4%) of hydrogen in air. The nanosensor's sensitivity increases from 11% to 67% with temperature from 50 to 150 °C and also shows fast response time (9–16 s) and moderate recovery time (100–200 s). A sensing mechanism is proposed based on Schottky barrier changes at heterojunctions and change in depletion region of NRs.

  2. Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

    NASA Astrophysics Data System (ADS)

    Ranwa, Sapana; Kumar, Mohit; Singh, Jitendra; Fanetti, Mattia; Kumar, Mahesh

    2015-07-01

    Vertically well aligned ZnO nanorods (NRs) were grown on Si(100) substrate using RF magnetron sputtering technique. Scanning electron microscopy images confirms uniform distribution of NRs on 2 in. wafer with average diameter, height and density being ˜75 nm, ˜850 nm, and ˜1.5 × 1010 cm-2, respectively. X-ray diffraction reveals that the ZnO NRs are grown along c-axis direction with wurtzite crystal structure. Cathodoluminescence spectroscopy, which shows a single strong peak around 3.24 eV with full width half maxima 130 meV, indicates the high crystalline and optical quality of ZnO and very low defect density. Vertically aligned nanosensors were fabricated by depositing gold circular Schottky contacts on ZnO NRs. Resistance responses of nanosensors were observed in the range from 50 to 150 °C in 1% and 5% hydrogen in argon environment, which is below and above the explosive limit (4%) of hydrogen in air. The nanosensor's sensitivity increases from 11% to 67% with temperature from 50 to 150 °C and also shows fast response time (9-16 s) and moderate recovery time (100-200 s). A sensing mechanism is proposed based on Schottky barrier changes at heterojunctions and change in depletion region of NRs.

  3. Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors.

    PubMed

    Xu, Liping; Li, Xin; Zhan, Zhaoyao; Wang, Liang; Feng, Shuanglong; Chai, Xiangyu; Lu, Wenqiang; Shen, Jun; Weng, Zhankun; Sun, Jie

    2015-09-16

    Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor-solid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO2/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO2/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics. PMID:26308593

  4. ZnO nanowire array growth on precisely controlled patterns of inkjet-printed zinc acetate at low-temperatures.

    PubMed

    Tsangarides, Constantinos P; Ma, Hanbin; Nathan, Arokia

    2016-06-01

    ZnO nanowires have been fabricated through the hydrothermal method on inkjet-printed patterns of zinc acetate dihydrate. The silicon substrate used was heated accordingly during the printing period in order to maintain good spatial uniformity of the zinc acetate nanoparticles, responsible for the pattern morphology. Printing more than one pass of precursor ink leads to an increase in seed layer thickness that subsequently alters the density and dimensions of nanowires. It has been demonstrated that with the right inkjet-printing parameters and substrate temperature, ZnO nanowires can be effortlessly fabricated in accordance with the desired pattern variations under low temperature and mild conditions that ensures promising applications in optoelectronic devices. PMID:27223061

  5. Physical properties of annealed ZnO nanowire/CuSCN heterojunctions for self-powered UV photodetectors.

    PubMed

    Garnier, Jérôme; Parize, Romain; Appert, Estelle; Chaix-Pluchery, Odette; Kaminski-Cachopo, Anne; Consonni, Vincent

    2015-03-18

    The low-cost fabrication of ZnO nanowire/CuSCN heterojunctions is demonstrated by combining chemical bath deposition with impregnation techniques. The ZnO nanowire arrays are completely filled by the CuSCN layer from their bottoms to their tops. The CuSCN layer is formed of columnar grains that are strongly oriented along the [003] direction owing to the polymeric form of the β-rhombohedral crystalline phase. Importantly, an annealing step is found essential in a fairly narrow range of low temperatures, not only for outgassing the solvent from the CuSCN layer, but also for reducing the density of interfacial defects. The resulting electrical properties of annealed ZnO nanowire/CuSCN heterojunctions are strongly improved: a maximum rectification ratio of 2644 at ±2 V is achieved following annealing at 150 °C under air atmosphere, which is related to a strong decrease in the reverse current density. Interestingly, the corresponding self-powered UV photodetectors exhibit a responsivity of 0.02 A/W at zero bias and at 370 nm with a UV-to-visible (370-500 nm) rejection ratio of 100 under an irradiance of 100 mW/cm(2). The UV selectivity at 370 nm can also be readily modulated by tuning the length of ZnO nanowires. Eventually, a significant photovoltaic effect is revealed for this type of heterojunctions, leading to an open circuit voltage of 37 mV and a short circuit current density of 51 μA/cm(2), which may be useful for the self-powering of the complete device. These findings show the underlying physical mechanisms at work in ZnO nanowire/CuSCN heterojunctions and reveal their high potential as self-powered UV photodetectors. PMID:25706583

  6. Enhanced visible light photocatalytic performance of ZnO nanowires integrated with CdS and Ag2S.

    PubMed

    Chen, Chienhua; Li, Zhengcao; Lin, Hehnan; Wang, Guojing; Liao, Jiecui; Li, Mingyang; Lv, Shasha; Li, Wei

    2016-02-18

    A series of ZnO-CdS-Ag2S ternary nanostructures with different amounts of Ag2S were prepared using simple and low-cost successive ionic layer adsorption and reaction (SILAR) and a chemical precipitation method. The ZnO nanowires, with a diameter of ∼100 nm and a length of ∼1 μm, were modified by coating CdS and Ag2S. CdS has a high absorption coefficient and can efficiently match with the energy levels of ZnO, which can enhance the light absorption ability of the nanostructures. In addition, Ag2S with a narrow band gap was used as the main light absorber and played an important role in increasing the light absorption in the visible light region. The photocatalytic activity of the ZnO-CdS-Ag2S ternary nanostructures was investigated using the degradation of methyl orange (MO) in an aqueous solution under visible light. The ZnO-CdS-Ag2S ternary nanostructures were found to be more efficient than ZnO nanowires, ZnO-CdS nanowires, and ZnO-Ag2S nanowires. There is 7.68 times more photocatalytic activity for MO degradation in terms of the rate constant for ZnO-CdS-Ag2S 15-cycle ternary nanostructure compared to the as-grown ZnO. Furthermore, the effect of the amount of Ag2S and CdS on the ZnO surface on the photocatalytic activity was analyzed. The superior photo-absorption properties and photocatalytic performance of the ZnO-CdS-Ag2S ternary nanostructures can be ascribed to the heterostructure, which enhanced the separation of the photo-induced electron-hole pairs. In addition, visible light could be absorbed by ZnO-CdS-Ag2S ternary nanostructures rather than by ZnO. PMID:26815888

  7. Contact properties and surface reaction kinetics of single ZnO nanowire devices fabricated by dielectrophoresis

    NASA Astrophysics Data System (ADS)

    Pau, J. L.; García Núñez, C.; García Marín, A.; Guerrero, C.; Rodríguez, P.; Borromeo, S.; Piqueras, J.

    2014-03-01

    This work describes the development of ZnO nanowire (NW) devices for ultraviolet detection and cost-effective gas sensing. A dielectrophoresis (DEP) flow cell fabricated for the integration of NWs on different substrates is presented. The system includes the possibility to set characteristic parameters such as alternating current (AC) frequency, amplitude or flow speed in order to control NW trapping on specific sites defined by micro-gapped electrodes. The electrical characteristics of the rectifying metal/NW contact fabricated by DEP are investigated in darkness and under direct illumination of the metal-NW interface through the ZnO NW. A significant downshift of the turn-on voltage is observed in the current-voltage characteristics during the illumination with photon energies higher than the ZnO bandgap. The reduction is attributed to a barrier height lowering induced by interface charge emission. The effects of AC bias on the thermal drift of the DC average current in NW devices are also discussed. Finally, the reaction kinetics of ethanol and water vapors on the NW surface are compared through the analysis of the DC current under direct exposure to gas flows. Device responses to more complex compound mixtures such as coffee or mint are also monitored over time, showing different performance in both cases.

  8. Leapfrog cracking and nanoamorphization of ZnO nanowires during in situ electrochemical lithiation.

    PubMed

    Kushima, Akihiro; Liu, Xiao Hua; Zhu, Guang; Wang, Zhong Lin; Huang, Jian Yu; Li, Ju

    2011-11-01

    The lithiation reaction of single ZnO nanowire (NW) electrode in a Li-ion nanobattery configuration was observed by in situ transmission electron microscopy. Upon first charge, the single-crystalline NW was transformed into a nanoglass with multiple glassy nanodomains (Gleiter, H. MRS Bulletin2009, 34, 456) by an intriguing reaction mechanism. First, partial lithiation of crystalline NW induced multiple nanocracks ∼70 nm ahead of the main lithiation front, which traversed the NW cross-section and divided the NW into multiple segments. This was followed by rapid surface diffusion of Li(+) and solid-state amorphization along the open crack surfaces. Finally the crack surfaces merged, leaving behind a glass-glass interface (GGI). Such reaction front instability also repeated in the interior of each divided segment, further subdividing the NW into different nanoglass domains (nanoamorphization). Instead of the profuse dislocation plasticity seen in SnO(2) NWs (Science2010, 330, 1515), no dislocation was seen and the aforementioned nanocracking was the main precursor to the electrochemically driven solid-state amorphization in ZnO. Ab initio tensile decohesion calculations verified dramatic lithium embrittlement effect in ZnO, but not in SnO(2). This is attributed to the aliovalency of Sn cation (Sn(IV), Sn(II)) in contrast to the electronically more rigid Zn(II) cation. PMID:21942500

  9. Diameter and location control of ZnO nanowires using electrodeposition and sodium citrate

    NASA Astrophysics Data System (ADS)

    Lifson, Max L.; Levey, Christopher G.; Gibson, Ursula J.

    2013-10-01

    We report single-step growth of spatially localized ZnO nanowires of controlled diameter to enable improved performance of piezoelectric devices such as nanogenerators. This study is the first to demonstrate the combination of electrodeposition with zinc nitrate and sodium citrate in the growth solution. Electrodeposition through a thermally-grown silicon oxide mask results in localization, while the growth voltage and solution chemistry are tuned to control the nanowire geometry. We observe a competition between lateral (relative to the (0001) axis) citrate-related morphology and voltage-driven vertical growth which enables this control. High aspect ratios result with either pure nitrate or nitrate-citrate mixtures if large voltages are used, but low growth voltages permit the growth of large diameter nanowires in solution with citrate. Measurements of the current density suggest a two-step growth process. An oxide mask blocks the electrodeposition, and suppresses nucleation of thermally driven growth, permitting single-step lithography on low cost p-type silicon substrates.

  10. Synthesis and photoluminescence properties of aligned Zn{sub 2}GeO{sub 4} coated ZnO nanorods and Ge doped ZnO nanocombs

    SciTech Connect

    Su Yong; Meng Xia Chen Yiqing; Li Sen; Zhou Qingtao; Liang Xuemei; Feng Yi

    2008-07-01

    Aligned Zn{sub 2}GeO{sub 4} coated ZnO nanorods and Ge doped ZnO nanocombs were synthesized on a silicon substrate by a simple thermal evaporation method. The structure and morphology of the as-synthesized nanostructure were characterized using scanning electron microscopy and transmission electron microscopy. The growth of aligned Zn{sub 2}GeO{sub 4} coated ZnO nanorods and Ge doped ZnO nanocombs follows a vapor-solid (VS) process. Photoluminescence properties were also investigated at room temperature. The photoluminescence spectrum reveals the nanostructures have a sharp ultraviolet luminescence peak centered at 382 nm and a broad green luminescence peak centered at about 494 nm.

  11. The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires.

    PubMed

    Neretina, S; Hughes, R A; Devenyi, G A; Sochinskii, N V; Preston, J S; Mascher, P

    2008-05-01

    Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires. PMID:21825689

  12. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes

    PubMed Central

    Li, Zhiyang; Leung, Calvin; Gao, Fan; Gu, Zhiyong

    2015-01-01

    In this paper, vertically aligned Pt nanowire arrays (PtNWA) with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H2O2) detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO) template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM−1·cm−2) among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water) was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors. PMID:26404303

  13. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes.

    PubMed

    Li, Zhiyang; Leung, Calvin; Gao, Fan; Gu, Zhiyong

    2015-01-01

    In this paper, vertically aligned Pt nanowire arrays (PtNWA) with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H₂O₂) detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO) template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM⁻¹·cm⁻²) among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water) was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors. PMID:26404303

  14. Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite.

    PubMed

    Anyebe, E A; Sanchez, A M; Hindmarsh, S; Chen, X; Shao, J; Rajpalke, M K; Veal, T D; Robinson, B J; Kolosov, O; Anderson, F; Sundaram, R; Wang, Z M; Falko, V; Zhuang, Q

    2015-07-01

    The monolithic integration of InAs(1-x)Sb(x) semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs(1-x)Sb(x) nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs(1-x)Sb(x) nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs(1-x)Sb(x) nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs(1-x)Sb(x) nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics. PMID:26086785

  15. Tuning of structural, optical, and magnetic properties of ultrathin and thin ZnO nanowire arrays for nano device applications

    PubMed Central

    2014-01-01

    One-dimensional (1-D) ultrathin (15 nm) and thin (100 nm) aligned 1-D (0001) and (0001¯) oriented zinc oxide (ZnO) nanowire (NW) arrays were fabricated on copper substrates by one-step electrochemical deposition inside the pores of polycarbonate membranes. The aspect ratio dependence of the compressive stress because of the lattice mismatch between NW array/substrate interface and crystallite size variations is investigated. X-ray diffraction results show that the polycrystalline ZnO NWs have a wurtzite structure with a = 3.24 Å, c = 5.20 Å, and [002] elongation. HRTEM and SAED pattern confirmed the polycrystalline nature of ultrathin ZnO NWs and lattice spacing of 0.58 nm. The crystallite size and compressive stress in as-grown 15- and 100-nm wires are 12.8 nm and 0.2248 GPa and 22.8 nm and 0.1359 GPa, which changed to 16.1 nm and 1.0307 GPa and 47.5 nm and 1.1677 GPa after annealing at 873 K in ultrahigh vacuum (UHV), respectively. Micro-Raman spectroscopy showed that the increase in E2 (high) phonon frequency corresponds to much higher compressive stresses in ultrathin NW arrays. The minimum-maximum magnetization magnitude for the as-grown ultrathin and thin NW arrays are approximately 8.45 × 10−3 to 8.10 × 10−3 emu/g and approximately 2.22 × 10−7 to 2.190 × 10−7 emu/g, respectively. The magnetization in 15-nm NW arrays is about 4 orders of magnitude higher than that in the 100 nm arrays but can be reduced greatly by the UHV annealing. The origin of ultrathin and thin NW array ferromagnetism may be the exchange interactions between localized electron spin moments resulting from oxygen vacancies at the surfaces of ZnO NWs. The n-type conductivity of 15-nm NW array is higher by about a factor of 2 compared to that of the 100-nm ZnO NWs, and both can be greatly enhanced by UHV annealing. The ability to tune the stresses and the structural and relative occupancies of ZnO NWs in a wide range by annealing has

  16. High-efficiency solid-state dye-sensitized solar cells based on TiO(2)-coated ZnO nanowire arrays.

    PubMed

    Xu, Chengkun; Wu, Jiamin; Desai, Umang V; Gao, Di

    2012-05-01

    Replacing the liquid electrolytes in dye-sensitized solar cells (DSCs) with solid-state hole-transporting materials (HTMs) may solve the packaging challenge and improve the long-term stability of DSCs. The efficiencies of such solid-state DSCs (ss-DSCs), however, have been far below the efficiencies of their counterparts that use liquid electrolytes, primarily due to the challenges in filling HTMs into thick enough sensitized films based on sintered TiO(2) nanoparticles. Here we report fabrication of high-efficiency ss-DSCs using multilayer TiO(2)-coated ZnO nanowire arrays as the photoanodes. The straight channel between the vertically aligned nanostructures combined with a newly developed multistep HTM filling process allows us to effectively fill sensitized films as thick as 50 μm with the HTMs. The resulting ss-DSCs yield an average power conversion efficiency of 5.65%. PMID:22486787

  17. Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

    PubMed Central

    2014-01-01

    This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

  18. A MEMS based acetone sensor incorporating ZnO nanowires synthesized by wet oxidation of Zn film

    NASA Astrophysics Data System (ADS)

    Behera, Bhagaban; Chandra, Sudhir

    2015-01-01

    In this work, we report a simple and efficient method for synthesis of ZnO nanowires by thermal oxidation of Zn film and their integration with MEMS technologies to fabricate a sensor for acetone vapour detection. ZnO nanowires were prepared by thermal oxidation of sputter deposited Zn film. The nanostructured ZnO was characterized by x-ray diffraction, a scanning electron microscope and room temperature photoluminescence measurements. The ZnO nanowires synthesis process was integrated with MEMS technologies to obtain a sensor for volatile organic compounds, incorporating an on-chip Ni microheater and an interdigited electrode structure. To reduce the heat loss from the on-chip microheater, the sensor was made on a thin silicon diaphragm obtained via a modified reactive ion etching process. This resulted in considerable power saving during sensor operation. For this, a three-mask process was used. The performance of the microheater was simulated on COMSOL and validated experimentally. The sensor has been tested for acetone vapour sensing and the operating parameters were optimized. The sensor has the ability to detect acetone vapour at 5 parts per million (ppm) concentrations when operated at 100 °C. The sensor consumed only 36 mW power and showed a high-sensitivity value of 26.3% for 100 ppm of acetone vapour.

  19. Field emission from in situ-grown vertically aligned SnO2 nanowire arrays

    PubMed Central

    2012-01-01

    Vertically aligned SnO2 nanowire arrays have been in situ fabricated on a silicon substrate via thermal evaporation method in the presence of a Pt catalyst. The field emission properties of the SnO2 nanowire arrays have been investigated. Low turn-on fields of 1.6 to 2.8 V/μm were obtained at anode-cathode separations of 100 to 200 μm. The current density fluctuation was lower than 5% during a 120-min stability test measured at a fixed applied electric field of 5 V/μm. The favorable field-emission performance indicates that the fabricated SnO2 nanowire arrays are promising candidates as field emitters. PMID:22330800

  20. Molten Pb as a catalyst for large-scale growth of highly aligned silicon oxide nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Jiang, Feihong; Yang, Yongdong; Li, Jianping

    2007-09-01

    Low melting point metal Pb can be used as an effective catalyst for the large-scale growth of highly aligned silicon oxide nanowire balls. Unlike any previously observed results using Au or Fe as catalyst, the molten Pb-catalyzed vapor-liquid-solid (VLS) growth exhibits many amazing growth phenomena. The scan electron microscopy (SEM) data indicate that the silicon oxide nanowires grow out perpendicularly from the surface of the metal Pb balls. For each ball, numerous nanowires simultaneously nucleate, grow at nearly the same rate and direction, and simultaneously stop growing. The pear-like, flower-like, chrysanthemum-like, and echinus-like SiO 2 nanostructures were formed. A growth model was proposed. The experimental results further expand the low melting point metal-catalyzed VLS mechanism to a broader range.

  1. Input/output pulse operation of ZnO nanowire threshold integrators.

    PubMed

    White, Richard; Colli, Alan; Li, Hongwei; Kivioja, Jani

    2011-01-14

    Integrating more functionality into individual nano-components is a key step to exploit alternative architectures for energy-efficient computation, such as, for instance, neuromorphic computing. Here, we show how to configure ZnO nanowire field-effect transistors as light pulse integrators with programmable threshold. We demonstrate that these single-component devices can be operated as both synchronous and asynchronous neuron-like structures, where the firing threshold and the form of the output signal, either step-like or spiked, can be controlled by using several operational parameters, including the environment in which the device operates. A detailed study showing how environmental variables, such as relative humidity, ambient light and temperature, affect device operation is presented. PMID:21139191

  2. Plasma enhanced multistate storage capability of single ZnO nanowire based memory

    SciTech Connect

    Lai, Yunfeng Xin, Pucong; Cheng, Shuying; Yu, Jinling; Zheng, Qiao

    2015-01-19

    Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on the MSS and the switching properties have been scarcely investigated. We have demonstrated a stable four-state storage capability of single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical switching is attributed to the electron trapping and detrapping from the oxygen vacancies (V{sub o}s). The MSS relates to the electrical-thermal induced distribution of the V{sub o}s which determines electron transport behavior to show different resistance states. Additionally, programming (set and reset) voltages decrease with plasma treatment due to the thickness modulation of the interface barrier.

  3. Direct observation of Li diffusion in Li-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Li, Guohua; Yu, Lei; Hudak, Bethany M.; Chang, Yao-Jen; Baek, Hyeonjun; Sundararajan, Abhishek; Strachan, Douglas R.; Yi, Gyu-Chul; Guiton, Beth S.

    2016-05-01

    The direct observation of Li diffusion in Li-doped zinc oxide nanowires (NWs) was realized by using in situ heating in the scanning transmission electron microscope (STEM). A continuous increase of low atomic mass regions within a single NW was observed between 200 °C and 600 °C when heated in vacuum, which was explained by the conversion of interstitial to substitutional Li in the ZnO NW host lattice. A kick-out mechanism is introduced to explain the migration and conversion of the interstitial Li (Lii) to Zn-site substitutional Li (LiZn), and this mechanism is verified with low-temperature (11 K) photoluminescence measurements on as-grown and annealed Li-doped zinc oxide NWs, as well as the observation of an increase of NW surface roughing with applied bias.

  4. Hierarchical ZnO Nanowire Growth with Tunable Orientations on Versatile Substrates Using Atomic Layer Deposition Seeding

    SciTech Connect

    Bielinski, Ashley R.; Kazyak, Eric; Schleputz, Christian M.; Jung, Hee Joon; Wood, Kevin N.; Dasgupta, Neil P.

    2015-07-14

    The ability to synthesize semiconductor nanowires with deterministic and tunable control of orientation and morphology on a wide range of substrates, while high precision and repeatability are maintained, is a challenge currently faced for the development of many nanoscale material systems. Here we show that atomic layer deposition (ALD) presents a reliable method of surface and interfacial modification to guide nanowire orientation on a variety of substrate materials and geometries, including high-aspect-ratio, three-dimensional templates. We demonstrate control of the orientation and geometric properties of hydrothermally grown single crystalline ZnO nanowires via the deposition of a ZnO seed layer by ALD. The crystallographic texture and roughness of the seed layer result in tunable preferred nanowire orientations and densities for identical hydrothermal growth conditions. The structural and chemical relationship between the ALD layers and nanowires was investigated with synchrotron X-ray diffraction, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy to elucidate the underlying mechanisms of orientation and morphology control. The resulting control parameters were utilized to produce hierarchical nanostructures with tunable properties on a wide range of substrates, including vertical micropillars, paper fibers, porous polymer membranes, and biological substrates. This illustrates the power of ALD for interfacial engineering of heterogeneous material systems at the nanoscale, to provide a highly controlled and scalable seeding method for bottom-up synthesis of integrated nanosystems.

  5. Growth and characterization of vertically aligned ZnO nanorods grown on porous silicon: Effect of precursor concentration

    NASA Astrophysics Data System (ADS)

    Shabannia, R.; Abu Hassan, H.

    2013-10-01

    Vertically aligned ZnO nanorods were successfully synthesized on porous silicon (PS) substrates by chemical bath deposition method at low temperature. The effect of precursor concentration on the growth of ZnO nanorods were systematically characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), low and high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), and Raman spectroscopy. The XRD results reveal that all the as-grown ZnO nanorod arrays grew preferentially oriented along the c-axis with a hexagonal wurtzite structure. The FESEM images show that the ZnO nanorods grown perpendicular to the PS substrates had diameters and lengths ranging from 13 nm to 69 nm and from 85 nm to 208 nm, respectively. The low-resolution TEM image indicates that the ZnO nanorod arrays had a uniform diameter along their whole length and a smooth surface. PL and Raman analyses reveal that the aligned ZnO nanorods exhibited a sharp ultraviolet peak and high E2 (high) at around 390 nm and 433.8 cm-1, respectively. Furthermore, the ZnO nanorods grew vertically under 0.050 M precursor concentration, resulting in a high structural and optical quality. These ZnO nanorods can be potentially used for fabricating nanoelectronic and nano-optical devices.

  6. Optical and Electrical Characteristics of Hybrid ZnO Nanowire/a-Si:H Solar Cells on Flexible Substrates under Mechanical Bending.

    PubMed

    Pathirane, Minoli K; Wong, William S

    2016-05-01

    Disordered 3-D hybrid ZnO nanowire/a-Si:H thin-film radial-junction solar cells are directly fabricated onto flexible substrates. A 41% reduction in optical reflectivity resulted in a 15% increase in the current density when the substrate is mechanically bent concave-up toward the incoming light. The light scattering of the nanowire devices was enhanced by decreasing the spacing between the nanowire solar cell by bending the substrate. PMID:27028309

  7. Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor.

    PubMed

    Gadea, G; Morata, A; Santos, J D; Dávila, D; Calaza, C; Salleras, M; Fonseca, L; Tarancón, A

    2015-05-15

    Silicon nanowires present outstanding properties for electronics, energy, and environmental monitoring applications. However, their integration into microelectromechanical systems (MEMS) is a major issue so far due to low compatibility with mainstream technology, which complicates patterning and controlled morphology. This work addresses the growth of 〈111〉 aligned silicon nanowire arrays fully integrated into standard MEMS processing by means of the chemical vapor deposition-vapor liquid solid method (CVD-VLS) using silane as a precursor. A reinterpretation of the galvanic displacement method is presented for selectively depositing gold nanoparticles of controlled size and shape. Moreover, a comprehensive analysis of the effects of synthesis temperature and pressure on the growth rate and alignment of nanowires is presented for the most common silicon precursor, i.e., silane. Compared with previously reported protocols, the redefined galvanic displacement together with a silane-based CVD-VLS growth methodology provides a more standard and low-temperature (<650 °C) synthesis scheme and a compatible route to reliably grow Si nanowires in MEMS for advanced applications. PMID:25902702

  8. Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor

    NASA Astrophysics Data System (ADS)

    Gadea, G.; Morata, A.; Santos, J. D.; Dávila, D.; Calaza, C.; Salleras, M.; Fonseca, L.; Tarancón, A.

    2015-05-01

    Silicon nanowires present outstanding properties for electronics, energy, and environmental monitoring applications. However, their integration into microelectromechanical systems (MEMS) is a major issue so far due to low compatibility with mainstream technology, which complicates patterning and controlled morphology. This work addresses the growth of <111> aligned silicon nanowire arrays fully integrated into standard MEMS processing by means of the chemical vapor deposition-vapor liquid solid method (CVD-VLS) using silane as a precursor. A reinterpretation of the galvanic displacement method is presented for selectively depositing gold nanoparticles of controlled size and shape. Moreover, a comprehensive analysis of the effects of synthesis temperature and pressure on the growth rate and alignment of nanowires is presented for the most common silicon precursor, i.e., silane. Compared with previously reported protocols, the redefined galvanic displacement together with a silane-based CVD-VLS growth methodology provides a more standard and low-temperature (<650 °C) synthesis scheme and a compatible route to reliably grow Si nanowires in MEMS for advanced applications.

  9. Synthesis of Vertically Aligned ZnO Nanorods on Ni-Based Buffer Layers Using a Thermal Evaporation Process

    NASA Astrophysics Data System (ADS)

    Kuo, Dong-Hau; He, Jheng-Yu; Huang, Ying-Sheng

    2012-03-01

    Uniform, vertically aligned ZnO nanorods have been grown mainly on Au-coated and ZnO-coated sapphire substrates, ZnO- and GaN-coated substrates, or self-catalyzing substrates. Conventionally, Ni-coated substrates have resulted in thick rods with diameter more than 250 nm, rods with nonuniform distribution in diameter, or rods with an alignment problem. In the best result in this paper, slender, uniform, vertically aligned, solely UV-emitting ZnO nanorods with diameter of 110 ± 25 nm and length of 30 ± 10 μm have been successfully grown at 700°C for 2 h on sapphire substrates covered with Ni-based buffer layers by using metallic zinc and oxygen as reactants. Scanning electron microscopy and room-temperature photoluminescence have been used to investigate the effects of process conditions on the slenderness and vertical alignment of the ZnO rods. To develop the desired ZnO nanorods, etched sapphire substrates, a second metallic Sn buffer layer on top of a spin-coated nickel oxide layer, polyvinyl alcohol binder at 10% concentration in solution of iron nitrate, and pyrolysis and reduction reactions were involved. Defect photoemission for thick ZnO rods is attributed to insufficient oxygen supply during the growth process with fixed oxygen flow rate.

  10. Alignment, rotation, and spinning of single plasmonic nanoparticles and nanowires using polarization dependent optical forces.

    PubMed

    Tong, Lianming; Miljković, Vladimir D; Käll, Mikael

    2010-01-01

    We demonstrate optical alignment and rotation of individual plasmonic nanostructures with lengths from tens of nanometers to several micrometers using a single beam of linearly polarized near-infrared laser light. Silver nanorods and dimers of gold nanoparticles align parallel to the laser polarization because of the high long-axis dipole polarizability. Silver nanowires, in contrast, spontaneously turn perpendicular to the incident polarization and predominantly attach at the wire ends, in agreement with electrodynamics simulations. Wires, rods, and dimers all rotate if the incident polarization is turned. In the case of nanowires, we demonstrate spinning at an angular frequency of approximately 1 Hz due to transfer of spin angular momentum from circularly polarized light. PMID:20030391