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Sample records for alkali-resistant silicon nitride

  1. Subtask 6.6 - SiAION Coatings for Alkali-Resistant Silicon Nitride. Topical report

    SciTech Connect

    1997-02-25

    The efficiency of a gas turbine can be improved by increasing operating temperature. Construction materials should both meet high strength requirements and exhibit hot alkali corrosion resistance. Structural ceramics based on silicon nitride are promising candidates for high temperature engineering applications because of their high strength and good resistance to corrosion. Their performance varies significantly with the mechanical properties of boundary phases which, in turn, depend on their chemical composition, thickness of the amorphous phase, and the deformation process. To make silicon nitride ceramics tough, SiAlON ceramics were developed with controlled crystallization of the amorphous grain boundary phase. Crystallization of the grain boundary glass improves the high temperature mechanical properties of silicon nitride ceramics. Thus, the knowledge of silicon oxynitride ceramics corrosion behavior in Na{sub 2}SO{sub 4} becomes important for engineers in designing appropriate part for turbines working at high temperatures. So far there has been no report concerning alkali attack on SiAlON ceramics in the presence of SO{sub 2} and chlorine in flue gas. The goal of this project was to investigate alkali corrosion of SiAlON-Y structural ceramics under combustion conditions in the presence of sodium derived components.

  2. Task 6.6 - Sialon Coatings for Alkali-Resistant Silicon Nitride: Semi-annual report, July 1-December 31, 1996

    SciTech Connect

    Nowok, J.W.

    1997-12-31

    The efficiency of a gas turbine can be improved by increasing operating temperature. Construction materials should meet both high strength requirements and hot-alkali corrosion resistance. Structural ceramics based on silicon nitride are promising candidates for high temperature engineering applications because of their high strength and good resistance to corrosion. Their performance varies significantly with the mechanical properties of boundary phases which, in turn, depend on their chemical composition, thickness of the amorphous phase, and the deformation process. To make silicon nitride ceramics tough, SiAlON ceramics were developed with controlled crystallization of the amorphous grain boundary phase. Crystallization of the grain boundary glass improves the high temperature mechanical properties of silicon nitride ceramics.

  3. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  4. Silicon surface passivation by silicon nitride deposition

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.

    1984-01-01

    Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.

  5. Sintering silicon nitride

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P. (Inventor); Levine, Stanley R. (Inventor); Sanders, William A. (Inventor)

    1993-01-01

    Oxides having a composition of (Ba(1-x)Sr(x))O-Al2O3-2SiO2 are used as sintering aids for producing an improved silicon nitride ceramic material. The x must be greater than 0 to insure the formation of the stable monoclinic celsian glass phase.

  6. Cordierite silicon nitride filters

    SciTech Connect

    Sawyer, J.; Buchan, B. ); Duiven, R.; Berger, M. ); Cleveland, J.; Ferri, J. )

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  7. Silicon Nitride Equation of State

    NASA Astrophysics Data System (ADS)

    Swaminathan, Pazhayannur; Brown, Robert

    2015-06-01

    This report presents the development a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4) . Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonalβ-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products and then combined with the single component solid models to study the global phase diagram. Sponsored by the NASA Goddard Space Flight Center Living With a Star program office.

  8. Silicon nitride sintered body

    NASA Technical Reports Server (NTRS)

    Suzuki, K.; Shinohara, N.

    1984-01-01

    The sintering of silicon carbide and it production are described. The method of production is by calcination in which molding is followed by sintering without compression. The invention improves the composition of the silicon carbide ceramic. Six examples of the invention are illustrated and discussed.

  9. Method for producing silicon nitride/silicon carbide composite

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-07-23

    Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

  10. Shock Response of Silicon Nitride

    NASA Astrophysics Data System (ADS)

    Dandekar, D. P.; Casem, D. T.; Motoyashiki, Y.; Sato, E.

    2009-06-01

    Silicon nitride is suitable for varied applications. The properties of silicon nitride have been tailored through processing and doping. The current work presents shock response of silicon nitride marketed as SN282. The density of this material, 3.4 Mg/m^3, exceeds its single crystal density due to the presence of lutetium oxide as an additive in ca. 5% by weight in the material. While the average grain size is 3.4 microns, aspect ratio of the grains exceed 3. Preliminary results of shock wave experiments may be summarized as follows: (1) The Hugoniot Elastic Limit (HEL) of SN282 is 11.2 GPa. (2) The magnitude of the inelastic wave velocity just above the HEL is 8.73 km/s, suggesting that inelastic deformation above the HEL is due to shock induced plasticity in the material. (3) The estimated value of the spall strength is 0.5 GPa. The spall strength of SN282 remains unchanged even when shocked beyond the HEL. The non-vanishing spall strength suggests that doping plays a role in the retention of spall strength of SN282. The role of doping needs to be further investigated.

  11. Manufacture of sintered silicon nitrides

    NASA Technical Reports Server (NTRS)

    Iwai, T.

    1985-01-01

    Sintered silicon nitrides are manufactured by sintering Si3N powder containing 2 to 15% in wt of a powder mixture composed of nitride powder of lanthanide or Y 100 parts and AIN powder less than 100 parts at 1500 to 1900 deg. temperature under a pressure of less than 200 Kg/sq. cm. The sintered Si3N has high mechanical strength in high temperature. Thus, Si3N4 93.0, Y 5.0 and AlN 2.0% in weight were wet mixed in acetone in N atom, molded and sintered at 1750 deg. and 1000 Kg/sq. cm. to give a sintered body having high hardness.

  12. Feasibility study of silicon nitride regenerators

    NASA Technical Reports Server (NTRS)

    Fucinari, C. A.; Rao, V. D. N.

    1979-01-01

    The feasibility of silicon nitride as a regenerator matrix material for applications requiring inlet temperatures above 1000 C is examined. The present generation oxide ceramics are used as a reference to examine silicon nitride from a material characteristics, manufacturing, thermal stress and aerothermodynamic viewpoint.

  13. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  14. Shock Response of Silicon Nitride

    NASA Astrophysics Data System (ADS)

    Dandekar, D. P.; Casem, D. T.; Motoyashiki, Y.; Sato, E.

    2009-12-01

    Silicon nitride is suitable for varied applications because its properties can be tailored through processing and doping. The current work presents shock response of silicon nitride marketed as SN282. The density of this material, 3.4 Mg/m3, exceeds its single crystal density, 3.2 Mg/m3, due to the presence of lutetium oxide as an additive around 5% by weight in the material. While the average grain size is 3.4 microns, the aspect ratio of the grains exceed 3. Preliminary results of shock wave experiments may be summarized as follows: (1) The Hugoniot Elastic Limit (HEL) of SN282 lies between 10.8 and 11.9 GPa. (2) The magnitude of the inelastic wave velocity just above the HEL is 8.73 km/s, suggesting that inelastic deformation above the HEL is due to shock induced plasticity in the material. (3) The value of the spall strength lies between 0.57 and 0.65 GPa. The spall strength of SN282 remains unchanged even when shocked beyond the HEL to at least 19.2 GPa unlike other brittle ceramics.

  15. Improved dispersion of silicon nitride whiskers

    SciTech Connect

    Shih, W.H.; Buchta, M.

    1995-10-01

    To improve the dispersion of silicon nitride whiskers in aqueous suspensions, a standard dispersant used in glass fiber industry, 3-aminopropyltriethoxysilane (APS) is added. It was found that the viscosity of the whisker suspensions is lowered and the centrifuged density of the suspensions is increased with the addition of the APS. The pH values of suspensions before and after the addition of APS indicate that ASP extracts H{sup +} ions from the solutions and the adsorption of APS on silicon nitride is saturated in the experiment. The results indicate a colloidal route to the processing of ceramic composites with silicon nitride whiskers as reinforcements.

  16. Silicon Nitride Membranes for Filtration and Separation

    SciTech Connect

    Galambos, Paul; Zavadil, Kevin; Shul, Randy; Willison, Christi Gober; Miller, Sam

    1999-07-19

    Semi-Permeable silicon nitride membranes have been developed using a Bosch etch process followed by a reactive ion etch (NE) process. These membranes were observed to allow air but not water to pass through them into surface micromachined, silicon nitride microfluidic channels. Membranes with this property have potential use in microfluidic systems as gas bubble traps and vents, filters to remove particles and gas partitioning membranes. Membrane permeation was measured as 1.6 x 10{sup {minus}8} mol/m{sup 2}Pa s of helium for inline membranes at the entrance and exit of the silicon nitride microfluidic channels.

  17. Silicon nitride microwave photonic circuits.

    PubMed

    Roeloffzen, Chris G H; Zhuang, Leimeng; Taddei, Caterina; Leinse, Arne; Heideman, René G; van Dijk, Paulus W L; Oldenbeuving, Ruud M; Marpaung, David A I; Burla, Maurizio; Boller, Klaus-J

    2013-09-23

    We present an overview of several microwave photonic processing functionalities based on combinations of Mach-Zehnder and ring resonator filters using the high index contrast silicon nitride (TriPleX™) waveguide technology. All functionalities are built using the same basic building blocks, namely straight waveguides, phase tuning elements and directional couplers. We recall previously shown measurements on high spurious free dynamic range microwave photonic (MWP) link, ultra-wideband pulse generation, instantaneous frequency measurements, Hilbert transformers, microwave polarization networks and demonstrate new measurements and functionalities on a 16 channel optical beamforming network and modulation format transformer as well as an outlook on future microwave photonic platform integration, which will lead to a significantly reduced footprint and thereby enables the path to commercially viable MWP systems. PMID:24104179

  18. Joining of silicon nitrides using oxynitride glasses

    SciTech Connect

    O`Brien, M.H.

    1993-03-01

    This report presents a study on commercial silicon nitrides that were successfully joined using oxynitride glasses. Sintered silicon nitride was joined by either closed or glass-filled joints. Glass-filled joints were successfully used on hot-pressed silicon nitrides and were comparable in fast fracture strength to unjoined silicon nitrides up to approximately 1000C. Above that temperature, strengths decreased rapidly and glass flow failure began. The study observed that time-dependent failure currently limits the service temperatures of glass-filled joints. Creep failure occurred in excess of 1000C. Between 900 and 1000C, slow crack growth failure was observed. Cavitation (or viscous deformation) was the rate-controlling mechanism of slow crack growth.

  19. Silicon nitride reinforced with molybdenum disilicide

    SciTech Connect

    Petrovic, J.J.; Honnell, R.E.

    1990-12-31

    Compositions of matter comprised of silicon nitride and molybdenum disilicide and methods of making the compositions, where the molybdenum disilicide is present in amounts ranging from about 5 to about 50 vol%.

  20. Silicon nitride reinforced with molybdenum disilicide

    DOEpatents

    Petrovic, John J.; Honnell, Richard E.

    1991-01-01

    Compositions of matter comprised of silicon nitride and molybdenum disilicide and methods of making the compositions, where the molybdenum disilicide is present in amounts ranging from about 5 to about 50 vol. %.

  1. Nitride-bonded silicon carbide composite filter

    SciTech Connect

    Thomson, B.N.; DiPietro, S.G.

    1995-12-01

    The objective of this program is to develop and demonstrate an advanced hot gas filter, using ceramic component technology, with enhanced durability to provide increased resistance to thermal fatigue and crack propagation. The material is silicon carbide fiber reinforced nitride bonded silicon carbide.

  2. Highly porous silicon membranes fabricated from silicon nitride/silicon stacks.

    PubMed

    Qi, Chengzhu; Striemer, Christopher C; Gaborski, Thomas R; McGrath, James L; Fauchet, Philippe M

    2014-07-23

    Nanopore formation in silicon films has previously been demonstrated using rapid thermal crystallization of ultrathin (15 nm) amorphous Si films sandwiched between nm-thick SiO2 layers. In this work, the silicon dioxide barrier layers are replaced with silicon nitride, resulting in nanoporous silicon films with unprecedented pore density and novel morphology. Four different thin film stack systems including silicon nitride/silicon/silicon nitride (NSN), silicon dioxide/silicon/silicon nitride (OSN), silicon nitride/silicon/silicon dioxide (NSO), and silicon dioxide/silicon/silicon dioxide (OSO) are tested under different annealing temperatures. Generally the pore size, pore density, and porosity positively correlate with the annealing temperature for all four systems. The NSN system yields substantially higher porosity and pore density than the OSO system, with the OSN and NSO stack characteristics fallings between these extremes. The higher porosity of the Si membrane in the NSN stack is primarily due to the pore formation enhancement in the Si film. It is hypothesized that this could result from the interfacial energy difference between the silicon/silicon nitride and silicon/silicon dioxide, which influences the Si crystallization process. PMID:24623562

  3. Silicon nitride ceramic having high fatigue life and high toughness

    DOEpatents

    Yeckley, Russell L.

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  4. Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

    NASA Technical Reports Server (NTRS)

    Cohen, R. A.; Wheeler, R. K. (Inventor)

    1974-01-01

    A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

  5. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOEpatents

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  6. Infrared bolometers with silicon nitride micromesh absorbers

    NASA Technical Reports Server (NTRS)

    Bock, J. J.; Turner, A. D.; DelCastillo, H. M.; Beeman, J. W.; Lange, A. E.; Mauskopf, P. D.

    1996-01-01

    Sensitive far infrared and millimeter wave bolometers fabricated from a freestanding membrane of low stress silicon nitride are reported. The absorber, consisting of a metallized silicon nitride micromesh thermally isolated by radial legs of silicon nitride, is placed in an integrating cavity to efficiently couple to single mode or multiple mode infrared radiation. This structure provides low heat capacity, low thermal conduction and minimal cross section to energetic particles. A neutron transmutation doped Ge thermister is bump bonded to the center of the device and read out with evaporated Cr-Au leads. The limiting performance of the micromesh absorber is discussed and the recent results obtained from a 300 mK cold stage are summarized.

  7. Tough silicon nitride matrix composites using Textron silicon carbide monofilaments

    SciTech Connect

    Foulds, W.; Lecostaouec, J.F.; Landry, C.; Dipietro, S.; Vasilos, T.

    1989-10-01

    The use of Textron SCS silicon carbide monofilament fibers as a reinforcement for silicon nitride is described. Samples were processed by both chemical vapor infiltration and hot pressing. Mechanical tests were performed in flexure, tension, and in shear. A ballistic test demonstrated high velocity impact toughness. 5 refs.

  8. Silicon-nitride and metal composite

    DOEpatents

    Landingham, Richard L.; Huffsmith, Sarah A.

    1981-01-01

    A composite and a method for bonding the composite. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi.sub.2 indirectly bonding the composite together. The method includes contacting the layer of MoSi.sub.2 with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400.degree. C.; and, simultaneously with the heating, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

  9. Silicon-nitride and metal composite

    DOEpatents

    Landingham, R.L.; Huffsmith, S.A.

    A composite and a method for bonding the composite are described. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi/sub 2/ indirectly bonding the composite together. The method includes contacting the layer of MoSi/sub 2/ with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400/sup 0/C; and, simultaneously, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

  10. Wetting and infiltration of nitride bonded silicon nitride by liquid silicon

    NASA Astrophysics Data System (ADS)

    Schneider, V.; Reimann, C.; Friedrich, J.

    2016-04-01

    Nitride bonded silicon nitride (NBSN) is a promising crucible material for the repeated use in the directional solidification of multicrystalline (mc) silicon ingots for photovoltaic applications. Due to wetting and infiltration, however, silicon nitride in its initial state does not offer the desired reusability. In this work the sessile drop method is used to systematically study the wetting and infiltration behavior of NBSN after applying different oxidation procedures. It is found that the wetting of the NBSN crucible by liquid silicon can be prevented by the oxidation of the geometrical surface. The infiltration of liquid silicon into the porous crucible can be suppressed by oxygen enrichment within the volume of the NBSN, i.e. at the pore walls of the crucibles. The realized reusability of the NBSN is demonstrated by reusing a NBSN crucible six times for the directional solidification of undoped multicrystalline silicon ingots.

  11. Use of silicon in liquid sintered silicon nitrides and sialons

    DOEpatents

    Raj, R.; Baik, S.

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  12. Use of silicon in liquid sintered silicon nitrides and sialons

    DOEpatents

    Raj, Rishi; Baik, Sunggi

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  13. Silicon nitride having a high tensile strength

    DOEpatents

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1996-11-05

    A silicon nitride ceramic is disclosed comprising: (a) inclusions no greater than 25 microns in length, (b) agglomerates no greater than 20 microns in diameter, and (c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa. 4 figs.

  14. Slip casting and nitridation of silicon powder

    NASA Astrophysics Data System (ADS)

    Seiko, Y.

    1985-03-01

    Powdered Silicon was slip-cast with a CaSO4 x 0.5H2O mold and nitrided in a N atm. containing 0 or 5 vol. % H at 1000 to 1420 deg. To remove the castings, the modeling faces were coated successively with an aq. salt soap and powdered cellulose containing Na alginate, and thus prevented the sticking problem.

  15. Slip casting and nitridation of silicon powder

    NASA Technical Reports Server (NTRS)

    Seiko, Y.

    1985-01-01

    Powdered Silicon was slip-cast with a CaSO4 x 0.5H2O mold and nitrided in a N atm. containing 0 or 5 vol. % H at 1000 to 1420 deg. To remove the castings, the modeling faces were coated successively with an aq. salt soap and powdered cellulose containing Na alginate, and thus prevented the sticking problem.

  16. Silicon nitride having a high tensile strength

    DOEpatents

    Pujari, Vimal K.; Tracey, Dennis M.; Foley, Michael R.; Paille, Norman I.; Pelletier, Paul J.; Sales, Lenny C.; Willkens, Craig A.; Yeckley, Russell L.

    1996-01-01

    A silicon nitride ceramic comprising: a) inclusions no greater than 25 microns in length, b) agglomerates no greater than 20 microns in diameter, and c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa.

  17. Colloidal characterization of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  18. Silicon Nitride For Gallium Arsenide Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Nagle, J.; Morgan, David V.

    1987-04-01

    Gallium Arsenide, unlike silicon does not have a natural oxide with the dielectric and interface qualities of SiO2. As a consequence alternative techniques have to be developed for device and IC processing applications. Plasma deposited silicon nitride films are currently being investigated in many laboratories. This paper will deal with the characterization of such films deposited under a range of gas and plasma deposition conditions. The techniques of Infra Red Spectroscopy and Rutherford backscattering have been used for characterization of both "as deposited layers" and layers which have been annealed up to temperatures of 800 °C, after deposition. The use of RBS for silicon nitride on GaAs is limited since the relatively small nitride spectrum is superimposed on much larger GaAs spectrum. The problem can be removed by placing carbon test substrates alongside the GaAs wafers. This separates the silicon and nitrogen spectra from the substrate enabling enhanced accuracy to be obtained. In this paper the range of results obtained will be discussed in the context of the deposition condition in order to identify the optimum conditions for obtaining a stoichiometric compound and a high quality interface.

  19. Making a Silicon-Nitride/Silicon-Carbide Composite

    NASA Technical Reports Server (NTRS)

    Bhatt, R. T.

    1987-01-01

    Hot pressing and nitriding produce strong fiber/matrix material. Fabrication method developed for processing strong and tough silicon-based ceramic composite material, SiC/RBSN, which consists of reaction-bonded Si3N4 (RBSN) reinforced by continuous-length, high-modulus, high strength silicon carbide (SiC) fibers prepared by chemical-vapor deposition method. Increased toughness and ultimate strength of SiC/RBSN composite makes it potential structural material for advanced heat engines.

  20. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    SciTech Connect

    Lowden, Richard A.

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  1. Quantum electromechanics on silicon nitride nanomembranes

    NASA Astrophysics Data System (ADS)

    Fink, J. M.; Kalaee, M.; Pitanti, A.; Norte, R.; Heinzle, L.; Davanço, M.; Srinivasan, K.; Painter, O.

    2016-08-01

    Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom--mechanical, optical and microwave--would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments.

  2. Silicon Nitride Antireflection Coatings for Photovoltaic Cells

    NASA Technical Reports Server (NTRS)

    Johnson, C.; Wydeven, T.; Donohoe, K.

    1984-01-01

    Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

  3. Apparatus for silicon nitride precursor solids recovery

    DOEpatents

    Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.

    1995-04-04

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  4. Method for silicon nitride precursor solids recovery

    DOEpatents

    Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.

    1992-12-15

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  5. Bone ingrowth into porous silicon nitride.

    PubMed

    Anderson, M C; Olsen, R

    2010-03-15

    Achieving solid skeletal attachment is a requirement for the clinical success of orthopedic implants. Porous or roughened surfaces and coatings have been developed and used with mixed success to achieve attachment due to bone ingrowth. Silicon nitride is a high performance ceramic whose strength, imaging properties, and biocompatibility make it a candidate material for orthopedic implants. A porous form of silicon nitride, cancellous-structured ceramic (CSC), has been developed. CSC is a nonresorbable, partially radiolucent porous structure that can be bonded to orthopedic implants made of silicon nitride to facilitate skeletal attachment. The purpose of this study was to quantify the extent and rate of bone ingrowth into CSC in a large animal model. Cylindrical implants were placed bilaterally using staged surgeries in the medial femoral condyle of six sheep. Condyles were retrieved after 3 and 6 months in situ and prepared for examination of bone growth under SEM. Bone grew into CSC to extents and at rates similar to those reported for other titanium porous surfaces in studies involving large animals and postmortem retrievals in humans. Bone ingrowth was observed at depths of penetration greater than 3 mm in some implants after only 12 weeks in situ. Bone ingrowth into CSC is a viable method for achieving skeletal attachment. PMID:19437439

  6. Process for manufacture of semipermeable silicon nitride membranes

    DOEpatents

    Galambos, Paul Charles; Shul, Randy J.; Willison, Christi Gober

    2003-12-09

    A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.

  7. The Effect of Polymer Char on Nitridation Kinetics of Silicon

    NASA Technical Reports Server (NTRS)

    Chan, Rickmond C.; Bhatt, Ramakrishna T.

    1994-01-01

    Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

  8. Mechanical and tribological behavior of silicon nitride and silicon carbon nitride coatings for total joint replacements.

    PubMed

    Pettersson, M; Tkachenko, S; Schmidt, S; Berlind, T; Jacobson, S; Hultman, L; Engqvist, H; Persson, C

    2013-09-01

    Total joint replacements currently have relatively high success rates at 10-15 years; however, increasing ageing and an active population places higher demands on the longevity of the implants. A wear resistant configuration with wear particles that resorb in vivo can potentially increase the lifetime of an implant. In this study, silicon nitride (SixNy) and silicon carbon nitride (SixCyNz) coatings were produced for this purpose using reactive high power impulse magnetron sputtering (HiPIMS). The coatings are intended for hard bearing surfaces on implants. Hardness and elastic modulus of the coatings were evaluated by nanoindentation, cohesive, and adhesive properties were assessed by micro-scratching and the tribological performance was investigated in a ball-on-disc setup run in a serum solution. The majority of the SixNy coatings showed a hardness close to that of sintered silicon nitride (~18 GPa), and an elastic modulus close to that of cobalt chromium (~200 GPa). Furthermore, all except one of the SixNy coatings offered a wear resistance similar to that of bulk silicon nitride and significantly higher than that of cobalt chromium. In contrast, the SixCyNz coatings did not show as high level of wear resistance. PMID:23726925

  9. Process for producing amorphous and crystalline silicon nitride

    DOEpatents

    Morgan, P.E.D.; Pugar, E.A.

    1985-11-12

    A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

  10. Process for producing amorphous and crystalline silicon nitride

    DOEpatents

    Morgan, Peter E. D.; Pugar, Eloise A.

    1985-01-01

    A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

  11. Silicon nitride used as a rolling-element bearing material

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1975-01-01

    Rolling-element fatigue tests were conducted with hot-pressed silicon nitride to determine its ability to withstand concentrated contacts in rolling-element bearings. If hot-pressed silicon nitride is used for both balls and races, attention must be paid to fitting both shaft and bearing housing.

  12. Fabrication of translucent boron nitride dispersed polycrystalline silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Joshi, B.; Fu, Z.; Niihara, K.; Lee, S. W.

    2011-03-01

    Optical transparency was achieved at infrared region and overall translucent silicon nitride was fabricated using hot press sintering (HPS). The increase in h-BN content decreased the optical transparency. Microstructral observations shows that the optical, mechanical and tribological properties of BN dispersed polycrystalline Si3N4 ceramics were affected by the density, α:β-phase ratio and content of h-BN in sintered ceramics. The hot pressed samples were prepared from the mixture of α-Si3N4, AlN, MgO and h-BN at 1850°C. The composite contained from 0.25 to 2 mass % BN powder with sintering aids (9% AlN + 3% MgO). Maximum transmittance of 57% was achieved for 0.25 mass % BN doped Si3N4 ceramics. Fracture toughness was increased and wear volume and friction coefficient were decreased with increase in BN content.

  13. Effect of iron on nitriding rate of silicon

    SciTech Connect

    Kijima, Kazunori

    1996-12-31

    The present paper investigates reasons why iron doping promotes the nitriding reaction rate of silicon. Kinetic studies on silicon nitridation indicated that the nitriding rate was increased by one order of magnitude with iron addition and that a diffusion controlling process existed at the initial stage. Since nitrogen self-diffusion in silicon nitride may play an important role in silicon nitridation, it was measured by a gas-solid isotope exchange method using {sup 15}N isotope. Diffusion results showed that the self-diffusion coefficient increased by one order of magnitude with iron addition, and that the apparent activation energy did not change with or without additive. In order to understand why iron increases diffusion, the Moessbaur effect of iron doped silicon nitride was investigated. The isomer shift indicated that iron atoms were in the Fe{sup 3+} state. The quadrupole splitting could be explained by the presence of nitrogen vacancies in silicon nitride and the solubility limit of iron into silicon nitride lies around 0.6 at.% at 1430{degrees}C.

  14. Sputtered silicon nitride coatings for wear protection

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1982-01-01

    Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

  15. Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

    NASA Technical Reports Server (NTRS)

    Peters, J. W.; Hall, T. C.; Erickson, J. J.; Gebhart, F. L.

    1979-01-01

    The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

  16. Wide-bandwidth silicon nitride membrane microphones

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian T.; Bernstein, Jonathan J.

    1997-09-01

    Small, low cost microphones with high sensitivity at frequencies greater than 20 KHz are desired for applications such as ultrasonic imaging and communication links. To minimize stray capacitance between the microphone and its amplifier circuit, process compatibility between the microphone and on-chip circuitry is also desired to facilitate integration. In this work, we have demonstrated micromachined microphones packaged with hybrid JFET amplifier circuitry with frequency response extending to 100 KHz, and voltage sensitivity of approximately 2.0 mV/Pa from 100 Hz to 10 KHz, and 16.5 mV/Pa at 30 KHz with a bias voltage of 8.0 V. The microphones are fabricated with membranes and fixed backplates made of low temperature plasma-enhanced chemical vapor deposited (PECVD) silicon nitride. Because the maximum temperature of the fabrication process is 300 degrees Celsius, microphones may be built on silicon wafers from any commercial CMOS foundry without affecting transistor characteristics, allowing integration with sophisticated amplifier circuitry. Low stress silicon nitride deposition was used to produce membranes up to 2.0 mm diameter and 0.5 micrometer thickness with plus or minus 0.10 micrometer flatness. The excellent planarity of both the diaphragm and the backplate, combined with a narrow sense gap (approximately 2 micrometers) results in high output capacitance (up to 6.0 pF). The high output capacitance results in noise spectral density which is approximately 3x lower than silicon diaphragms microphones previously fabricated by the authors. Diaphragms with corrugations were fabricated to relive tensile stress, to increase deflection per unit pressure and to increase deflection linearity with pressure.

  17. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    DOEpatents

    Lowden, R.A.

    1994-04-05

    A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.

  18. Cordierite silicon nitride filters. Final report

    SciTech Connect

    Sawyer, J.; Buchan, B.; Duiven, R.; Berger, M.; Cleveland, J.; Ferri, J.

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  19. Quantum electromechanics on silicon nitride nanomembranes.

    PubMed

    Fink, J M; Kalaee, M; Pitanti, A; Norte, R; Heinzle, L; Davanço, M; Srinivasan, K; Painter, O

    2016-01-01

    Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom-mechanical, optical and microwave-would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments. PMID:27484751

  20. Quantum electromechanics on silicon nitride nanomembranes

    PubMed Central

    Fink, J. M.; Kalaee, M.; Pitanti, A.; Norte, R.; Heinzle, L.; Davanço, M.; Srinivasan, K.; Painter, O.

    2016-01-01

    Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments. PMID:27484751

  1. Development of silicon nitride of improved toughness

    NASA Technical Reports Server (NTRS)

    Brennan, J. J.

    1979-01-01

    The application of reaction sintered Si2N4 energy absorbing surface layers to hot-pressed Si3N4 was investigated. The surface layer was formed by in-place nitridation of silicon powder. It was found that reaction sintered Si3N4 layers of 1 mm thickness, fabricated from either -100, +200, -200, or -325 mesh Si powder and nitrided in 96% N2/4% H2 so that approximately 20-25 vol % unnitrided Si remained in the layer, resulted in a sevenfold increase in ballistic impact resistance of a 0.64 cm thick hot-pressed SI3N4 substrate from RT 1370 C. Both NC-132 SI3N4, with MgO additive, and NCX-34 Si3N4, with Y2O3 additive, were evaluated as substrate material. The finer grain size -200 and -325 mesh nitrided Si layers were for their smoothness and relatively high density. It was found that nitriding in N2/H2 mixtures, rather than pure N2, resulted in a microstructure that did not substantially degrade the strength of the hot-pressed Si3N4 substrate. Thermal cycling tests on the RSSN/HPSN combinations from 200 C to 1370 C for 75 cycles in air did not degrade the impact resistance nor the interfacial bonding, although a large amount of internal silica formation occurred within the RSSN layer. Mach 0.8, 5 hr, hot gas erosion tests showed no surface recession of RSSN layers at 1200 C and slight surface recession at 1370 C.

  2. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    SciTech Connect

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  3. PECVD silicon-rich nitride and low stress nitride films mechanical characterization using membrane point load deflection

    NASA Astrophysics Data System (ADS)

    Bagolini, Alvise; Picciotto, Antonino; Crivellari, Michele; Conci, Paolo; Bellutti, Pierluigi

    2016-02-01

    An analysis of the mechanical properties of plasma enhanced chemical vapor (PECVD) silicon nitrides is presented, using micro fabricated silicon nitride membranes under point load deflection. The membranes are made of PECVD silicon-rich nitride and low stress nitride films. The mechanical performance of the bended membranes is examined both with analytical models and finite element simulation in order to extract the elastic modulus and residual stress values. The elastic modulus of low stress silicon nitride is calculated using stress free analytical models, while for silicon-rich silicon nitride and annealed low stress silicon nitride it is estimated with a pre-stressed model of point-load deflection. The effect of annealing both in nitrogen and hydrogen atmosphere is evaluated in terms of residual stress, refractive index and thickness variation. It is demonstrated that a hydrogen rich annealing atmosphere induces very little change in low stress silicon nitride. Nitrogen annealing effects are measured and shown to be much higher in silicon-rich nitride than in low stress silicon nitride. An estimate of PECVD silicon-rich nitride elastic modulus is obtained in the range between 240-320 GPa for deposited samples and 390 GPa for samples annealed in nitrogen atmosphere. PECVD low stress silicon nitride elastic modulus is estimated to be 88 GPa as deposited and 320 GPa after nitrogen annealing.

  4. Silicon nitride protective coatings for silvered glass mirrors

    DOEpatents

    Tracy, C. Edwin; Benson, David K.

    1988-01-01

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  5. Silicon nitride protective coatings for silvered glass mirrors

    DOEpatents

    Tracy, C.E.; Benson, D.K.

    1984-07-20

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  6. Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

    SciTech Connect

    Chen, W.-R.; Chang, T.-C.; Liu, P.-T.; Yeh, J.-L.; Tu, C.-H.; Lou, J.-C.; Yeh, C.-F.; Chang, C.-Y.

    2007-08-20

    The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.

  7. Scale-up of microwave nitridation of sintered reaction bonded silicon nitride parts. Final report

    SciTech Connect

    Tiegs, T.N.; Kiggans, J.O.; Garvey, G.A.

    1997-10-01

    Scale-up were performed in which microwave heating was used to fabricate reaction-bonded silicon nitride and sintered reaction-bonded silicon nitride (SRBSN). Tests were performed in both a 2.45 GHz, 500 liter and a 2.45 GHz, 4000 liter multimode cavities. The silicon preforms processed in the studies were clevis pins for diesel engines. Up to 230 samples were processed in a single microwave furnace run. Data were collected which included weight gains for nitridation and sintering studies were performed using a conventional resistance-heated furnace.

  8. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  9. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  10. A review of oxide, silicon nitride, and silicon carbide brazing

    SciTech Connect

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed.

  11. Improved silicon nitride for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Yeh, H. C.; Wimmer, J. M.

    1986-01-01

    Silicon nitride is a high temperature material currently under consideration for heat engine and other applications. The objective is to improve the net shape fabrication technology of Si3N4 by injection molding. This is to be accomplished by optimizing the process through a series of statistically designed matrix experiments. To provide input to the matrix experiments, a wide range of alternate materials and processing parameters was investigated throughout the whole program. The improvement in the processing is to be demonstrated by a 20 percent increase in strength and a 100 percent increase in the Weibull modulus over that of the baseline material. A full characterization of the baseline process was completed. Material properties were found to be highly dependent on each step of the process. Several important parameters identified thus far are the starting raw materials, sinter/hot isostatic pressing cycle, powder bed, mixing methods, and sintering aid levels.

  12. Orthopedic applications of silicon nitride ceramics.

    PubMed

    Bal, B S; Rahaman, M N

    2012-08-01

    Silicon nitride (Si(3)N(4)) is a ceramic material developed for industrial applications that demand high strength and fracture resistance under extreme operating conditions. Recently, Si(3)N(4) has been used as an orthopedic biomaterial, to promote bone fusion in spinal surgery and to develop bearings that can improve the wear and longevity of prosthetic hip and knee joints. Si(3)N(4) has been implanted in human patients for over 3 years now, and clinical trials with Si(3)N(4) femoral heads in prosthetic hip replacement are contemplated. This review will provide background information and data relating to Si(3)N(4) ceramics that will be of interest to engineering and medical professionals. PMID:22542731

  13. Reliability of two sintered silicon nitride materials

    NASA Technical Reports Server (NTRS)

    Mieskowski, D. M.; Sanders, W. A.; Pierce, L. A.

    1985-01-01

    Two types of sintered silicon nitride were evaluated in terms of reliability: an experimental high pressure nitrogen sintered material and a commercial material. The results show wide variations in strength for both materials. The Weibull moduli were 5.5, 8.9, and 11 for the experimental material at room temperature, 1200, and 1370 C, respectively. The commercial material showed Weibull moduli of 9.0, 8.6, and 8.9 at these respective temperatures. No correlation between strength and flaw size was noted for the experimental material. The applicability of the Weibull and Griffith theories to processing defects on the order of 100 microns or less in size are discussed.

  14. Slurry-pressing consolidation of silicon nitride

    NASA Technical Reports Server (NTRS)

    Sanders, William A.; Kiser, James D.; Freedman, Marc R.

    1989-01-01

    A baseline slurry-pressing method for a silicon nitride material is developed. The Si3N4 composition contained 5.8 wt percent SiO2 and 6.4 wt percent Y2O3. Slurry-pressing variables included volume percent solids, application of ultrasonic energy, and pH. Twenty vol percent slurry-pressed material was approximately 11 percent stronger than both 30 vol percent slurry-pressed and dry-pressed materials. The Student's t-test showed the difference to be significant at the 99 percent confidence level. Twenty volume percent (300 h) slurry-pressed test bars exhibited strengths as high as 980 MPa. Large, columnar beta-Si3N4 grains caused failure in the highest strength specimens. The improved strength correlated with better structural uniformity as determined by radiography, optical microscopy, and image analysis.

  15. Slurry-pressing consolidation of silicon nitride

    NASA Technical Reports Server (NTRS)

    Sanders, William A.; Kiser, James D.; Freedman, Marc R.

    1988-01-01

    A baseline slurry-pressing method for a silicon nitride material is developed. The Si3N4 composition contained 5.8 wt percent SiO2 and 6.4 wt percent Y2O3. Slurry-pressing variables included volume percent solids, application of ultrasonic energy, and pH. Twenty vol percent slurry-pressed material was approximately 11 percent stronger than both 30 vol percent slurry-pressed and dry-pressed materials. The Student's t-test showed the difference to be significant at the 99 percent confidence level. Twenty volume percent (300 h) slurry-pressed test bars exhibited strengths as high as 980 MPa. Large, columnar beta-Si3N4 grains caused failure in the highest strength specimens. The improved strength correlated with better structural uniformity as determined by radiography, optical microscopy, and image analysis.

  16. Improved silicon nitride for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Yeh, Harry C.; Fang, Ho T.

    1991-01-01

    The results of a four year program to improve the strength and reliability of injection-molded silicon nitride are summarized. Statistically designed processing experiments were performed to identify and optimize critical processing parameters and compositions. Process improvements were monitored by strength testing at room and elevated temperatures, and microstructural characterization by optical, scanning electron microscopes, and scanning transmission electron microscope. Processing modifications resulted in a 20 percent strength and 72 percent Weibull slope improvement of the baseline material. Additional sintering aids screening and optimization experiments succeeded in developing a new composition (GN-10) capable of 581.2 MPa at 1399 C. A SiC whisker toughened composite using this material as a matrix achieved a room temperature toughness of 6.9 MPa m(exp .5) by the Chevron notched bar technique. Exploratory experiments were conducted on injection molding of turbocharger rotors.

  17. Numerical investigation of silicon nitride trench waveguide

    NASA Astrophysics Data System (ADS)

    Zhao, Qiancheng; Huang, Yuewang; Torun, Rasul; Rahman, Shah; Atasever, Tuva C.; Boyraz, Ozdal

    2015-08-01

    We numerically investigated optical properties, including evanescent intensity ratio (EIR), effective refractive index (Neff), dispersion coefficient (D), and mode area (Aeff) of the silicon nitride trench waveguides fabricated by using conventional lithography. The waveguides are etched 3 μm deep with potassium hydroxide for triangle and trapezoidal waveguides, which is then followed by 3 μm thermal oxidation and 725 nm silicon nitride deposition. The waveguide with 725 nm thickness has an EIR peak of 0.025 when its bottom width Wbtm equals 0.65 μm. A thinner waveguide has higher evanescent intensity ratio, which can be used in sensing applications. The locations of EIR peaks correspond to the quasi-TM and TE mode boundary. Narrower waveguides mainly support quasi-TM modes, whereas wider waveguides can support only TE modes. As the waveguide width increases, higher orders of TE modes emerge. In addition, a boundary of TE single mode and multimode can also be linearly curve fitted, according to the starting points of TE higher modes, in order to provide the single mode condition of the waveguide. The waveguide dispersion can be engineered to be in the anomalous region while at the same time remain close to zero. The waveguide with 725 nm thickness and 0.2 μm bottom width has its anomalous dispersion region between the wavelength of 1356 nm and 1462 nm. The mode area decreases with increasing waveguide width. This is the first time we have studied the mode properties of trench waveguides systematically. The waveguide will find more applications in sensing and nonlinear fields with the help of this mode analysis.

  18. Effect of processing parameters on reaction bonding of silicon nitride

    NASA Technical Reports Server (NTRS)

    Richman, M. H.; Gregory, O. J.; Magida, M. B.

    1980-01-01

    Reaction bonded silicon nitride was developed. The relationship between the various processing parameters and the resulting microstructures was to design and synthesize reaction bonded materials with improved room temperature mechanical properties.

  19. Molecular dynamics studies of the bonding properties of amorphous silicon nitride coatings on crystalline silicon

    NASA Astrophysics Data System (ADS)

    Butler, Keith T.; Lamers, Machteld P. W. E.; Weeber, Arthur W.; Harding, John H.

    2011-12-01

    In this paper we present molecular dynamics simulations of silicon nitride, both in bulk and as an interface to crystalline silicon. We investigate, in particular, the bonding structure of the silicon nitride and analyze the simulations to search for defective geometries which have been identified as potential charge carrier traps when silicon nitride forms an interface with silicon semiconductors. The simulations reveal how the bonding patterns in silicon nitride are dependent upon the stoichiometry of the system. Furthermore we demonstrate how having an "interphase", where the nitrogen content in silicon gradually reduces toward pure silicon across a boundary region, as opposed to an interface where there is an abrupt drop in nitrogen concentration at the boundary, can result in significantly different numbers of certain important carrier trap.

  20. Fabrication of turbine components and properties of sintered silicon nitride

    NASA Technical Reports Server (NTRS)

    Neil, J. T.; French, K. W.; Quackenbush, C. L.; Smith, J. T.

    1982-01-01

    This paper presents a status report on the injection molding of sinterable silicon nitride at GTE Laboratories. The effort involves fabrication of single axial turbine blades and monolithic radial turbine rotors. The injection molding process is reviewed and the fabrication of the turbine components discussed. Oxidation resistance and strength results of current injection molded sintered silicon nitride as well as dimensional checks on sintered turbine blades demonstrate that this material is a viable candidate for high temperature structural applications.

  1. Infrared Dielectric Properties of Low-stress Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Cataldo, Giuseppe; Beall, James A.; Cho, Hsiao-Mei; McAndrew, Brendan; Niemack, Michael D.; Wollack, Edward J.

    2012-01-01

    Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

  2. Elastic Properties of Several Silicon Nitride Films

    SciTech Connect

    Liu, X.; Metcalf, T. H.; Wang, Q.; Photiadis, D. M.

    2007-01-01

    We have measured the internal friction (Q{sup -1}) of amorphous silicon nitride (a-SiN{sub x}) films prepared by a variety of methods, including low-pressure chemical-vapor deposition (LPCVD), plasma-enhanced chemical-vapor deposition (PECVD), and hot-wire chemical-vapor deposition (HWCVD) from 0.5 K to room temperature. The measurements are made by depositing the films onto extremely high-Q silicon double paddle oscillator substrates with a resonant frequency of {approx}5500 Hz. We find the elastic properties of these a-SiN{sub x} films resemble those of amorphous silicon (a-Si) films, demonstrating considerable variation which depends on the film growth methods and post deposition annealing. The internal friction for most of the films shows a broad temperature-independent plateau below 30 K, characteristic of amorphous solids. The values of Q{sup -1}, however, vary from film to film in this plateau region by more than one order of magnitude. This has been observed in tetrehedrally covalent-bonded amorphous thin films, like a-Si, a-Ge, and a-C. The PECVD films have the highest Q{sup -1} just like a normal amorphous solid, while LPCVD films have an internal friction more than one order of magnitude lower. All the films show a reduction of Q{sup -1} after annealing at 800 C, even for the LPCVD films which were prepared at 850 C. This can be viewed as a reduction of structural disorder.

  3. Synthesis of silicon nitride films by ion beam enhanced deposition

    NASA Astrophysics Data System (ADS)

    Xianghuai, Liu; Bin, Xue; Zhihong, Zheng; Zuyao, Zhou; Shichang, Zou

    1989-03-01

    Silicon nitride films with stoichiometric ratio of Si 3N 4 have been synthesized by concurrent electron beam evaporation of silicon and bombardment with nitrogen ions. The results show that the component ratio of nitrogen to silicon in IBED silicon nitride films can be controlled and predicted by the atomic arrival rate ratio of nitrogen to silicon. IR measurement shows that the characteristic absorption peak of IBED Si 3N 4 is located at a wavenumber of 840 cm -1. The refractive index ranges from 2.2 to 2.6. RBS, AES, TEM, SEM, ED and spreading resistance measurement were used for investigation of the depth profiles of composition and structure of silicon nitride films synthesized by IBED. An intermixed layer is formed at the interface by the knock on effect, and a silicon enriched layer is observed at the surface region of the film. Normally the films were found to be amorphous, but electron diffraction patterns taken from deposited layer showed a certain crystallinity. The silicon nitride films prepared by IBED have dramatically less oxygen content than that formed by non-ion-assisted deposition.

  4. Radiation tolerant silicon nitride insulated gate field effect transistors

    NASA Technical Reports Server (NTRS)

    Newman, P. A.

    1969-01-01

    Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.

  5. Comparison of the surface charge behavior of commercial silicon nitride and silicon carbide powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1988-01-01

    The adsorption and desorption of protons from aqueous solution onto the surfaces of a variety of commercial silicon carbide and silicon nitride powders has been examined using a surface titration methodology. This method provides information on some colloidal characteristics, such as the point of zero charge (pzc) and the variation of proton adsorption with dispersion pH, useful for the prediction of optimal ceramic-processing conditions. Qualitatively, the magnitude of the proton adsorption from solution reveals small differences among all of the materials studied. However, the results show that the pzc for the various silicon nitride powders is affected by the powder synthesis route. Complementary investigations have shown that milling can also act to shift the pzc exhibited by silicon nitride powder. Also, studies of the role of the electrolyte in the development of surface charge have indicated no evidence of specific adsorption of ammonium ion on either silicon nitride or silicon carbide powders.

  6. Development of a statistically proven injection molding method for reaction bonded silicon nitride, sintering reaction bonded silicon nitride, and sintered silicon nitride

    NASA Astrophysics Data System (ADS)

    Steiner, Matthias

    A statistically proven, series injection molding technique for ceramic components was developed for the construction of engines and gas turbines. The flow behavior of silicon injection-molding materials was characterized and improved. Hot-isostatic-pressing reaction bonded silicon nitride (HIPRBSN) was developed. A nondestructive component evaluation method was developed. An injection molding line for HIPRBSN engine components precombustion chamber, flame spreader, and valve guide was developed. This line allows the production of small series for engine tests.

  7. Planar silicon nitride mid-infrared devices

    NASA Astrophysics Data System (ADS)

    Tai Lin, Pao; Singh, Vivek; Kimerling, Lionel; Murthy Agarwal, Anuradha

    2013-06-01

    Integrated mid-infrared devices including (i) straight/bent waveguides and (ii) directional couplers are demonstrated on silicon nitride (SiN) thin films prepared by optimized low-pressure chemical vapor deposition. The deposited SiN film has a broad spectral transparency from visible up to a wavelength of λ = 8.5 μm (as seen from Fourier transform infrared spectroscopy). Our SiN waveguide shows a dominant fundamental mode with an optical loss of 2.1 dB/cm at λ = 3.7 μm. In addition, we demonstrate an efficient SiN directional coupler between λ = 3.55 μm to λ = 3.75 μm where an 8 dB extinction ratio is achieved within each channel upon wavelength scanning. With the inherent advantage of complementary metal-oxide-semiconductor compatibility, our SiN platform paves the way to create sophisticated photonic circuits that are desired for mid-infrared nonlinear light generation and chip-scale biochemical sensors.

  8. Improved silicon nitride for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Yeh, Hun C.; Fang, Ho T.

    1987-01-01

    The technology base required to fabricate silicon nitride components with the strength, reliability, and reproducibility necessary for actual heat engine applications is presented. Task 2 was set up to develop test bars with high Weibull slope and greater high temperature strength, and to conduct an initial net shape component fabrication evaluation. Screening experiments were performed in Task 7 on advanced materials and processing for input to Task 2. The technical efforts performed in the second year of a 5-yr program are covered. The first iteration of Task 2 was completed as planned. Two half-replicated, fractional factorial (2 sup 5), statistically designed matrix experiments were conducted. These experiments have identified Denka 9FW Si3N4 as an alternate raw material to GTE SN502 Si3N4 for subsequent process evaluation. A detailed statistical analysis was conducted to correlate processing conditions with as-processed test bar properties. One processing condition produced a material with a 97 ksi average room temperature MOR (100 percent of goal) with 13.2 Weibull slope (83 percent of goal); another condition produced 86 ksi (6 percent over baseline) room temperature strength with a Weibull slope of 20 (125 percent of goal).

  9. Forming of silicon nitride by gelcasting

    SciTech Connect

    Omatete, O.O.; Strehlow, R.A. ); Armstrong, B.L. . Garrett Ceramic Components Div.)

    1990-01-01

    Gelcasting is a near-net-shape forming technique that is applicable to various types of powders. It is accomplished by casting a concentrated suspension of a commercial ceramic powder in a solution of a polymerizable monomer and then polymerizing. The monomer used in the process is acrylamide which undergoes a vinyl polymerization. A filled gel is formed, which is dried and processed further. Gelcasting of alumina, sialon and silicon nitride has been carried out as the principal part of the Oak Ridge National Laboratory (ORNL) program. Two rotors have been gelcast as part of a cooperative research agreement between Allied-Signal Aerospace Company and ORNL. Emphasis is placed on the unit-operations of the process. Because a requirement of the process is a castable suspension of more than 50 vol % solids loading, good dispersion is crucial. Drying, another key process, has been studied extensively. Data on the relationship of physical properties of products to some of the more significant processing variables is discussed. Environmental, safety and hygiene issues are summarized. 9 refs., 7 figs.

  10. Improved silicon nitride for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Yeh, H. C.; Wimmer, J. M.; Huang, H. H.; Rorabaugh, M. E.; Schienle, J.; Styhr, K. H.

    1985-01-01

    The AiResearch Casting Company baseline silicon nitride (92 percent GTE SN-502 Si sub 3 N sub 4 plus 6 percent Y sub 2 O sub 3 plus 2 percent Al sub 2 O sub 3) was characterized with methods that included chemical analysis, oxygen content determination, electrophoresis, particle size distribution analysis, surface area determination, and analysis of the degree of agglomeration and maximum particle size of elutriated powder. Test bars were injection molded and processed through sintering at 0.68 MPa (100 psi) of nitrogen. The as-sintered test bars were evaluated by X-ray phase analysis, room and elevated temperature modulus of rupture strength, Weibull modulus, stress rupture, strength after oxidation, fracture origins, microstructure, and density from quantities of samples sufficiently large to generate statistically valid results. A series of small test matrices were conducted to study the effects and interactions of processing parameters which included raw materials, binder systems, binder removal cycles, injection molding temperatures, particle size distribution, sintering additives, and sintering cycle parameters.

  11. Method of densifying an article formed of reaction bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Mangels, John A. (Inventor)

    1982-01-01

    A method of densifying an article formed of reaction bonded silicon nitride is disclosed. The reaction bonded silicon nitride article is packed in a packing mixture consisting of silicon nitride powder and a densification aid. The reaction bonded silicon nitride article and packing powder are sujected to a positive, low pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause any open porosity originally found in the reaction bonded silicon nitride article to be substantially closed. Thereafter, the reaction bonded silicon nitride article and packing powder are subjected to a positive high pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause a sintering of the reaction bonded silicon nitride article whereby the strength of the reaction bonded silicon nitride article is increased.

  12. Second-harmonic generation in substoichiometric silicon nitride layers

    NASA Astrophysics Data System (ADS)

    Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

    2013-03-01

    Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

  13. Third-harmonic UV generation in silicon nitride nanostructures.

    PubMed

    Ning, Tingyin; Hyvärinen, Outi; Pietarinen, Henna; Kaplas, Tommi; Kauranen, Martti; Genty, Göery

    2013-01-28

    We report on strong UV third-harmonic generation from silicon nitride films and resonant waveguide gratings. We determine the absolute value of third-order susceptibility of silicon nitride at wavelength of 1064 nm to be χ(³) (-3ω,ω,ω,ω) = (2.8 ± 0.6) × 10⁻²⁰m²/V², which is two orders of magnitude larger than that of fused silica. The third-harmonic generation is further enhanced by a factor of 2000 by fabricating a resonant waveguide grating onto a silicon nitride film. Our results extend the operating range of CMOS-compatible nonlinear materials to the UV spectral regime. PMID:23389182

  14. Dynamic fracture toughnesses of reaction-bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Kobayashi, A. S.; Emery, A. F.; Liaw, B. M.

    1983-01-01

    The room-temperature dynamic fracture response of reaction-bonded silicon nitride is investigated using a hybrid experimental-numerical procedure. In this procedure, experimentally determined crack velocities are utilized to drive a dynamic finite-element code or dynamic finite-difference code in its generation mode in order to extract numerically the dynamic stress intensity factor of the fracturing specimen. Results show that the dynamic fracture toughness vs crack velocity relations of the two reaction-bonded silicon nitrides do not follow the general trend in those relations of brittle polymers and steel. A definite slow crack velocity during the initial phase of dynamic crack propagation is observed in reaction-bonded silicon nitride, which results in a nonunique dynamic fracture toughness vs crack velocity relation. In addition, it is found that a propagating crack will continue to propagate under a static stress intensity factor substantially lower than K(IC).

  15. Measurement and analysis of forces in grinding of silicon nitride

    SciTech Connect

    Jahanmir, S.; Hwang, T.; Whitenton, E.P.; Job, L.S.; Evans, C.J.

    1995-12-31

    Using an instrumented surface grinder, the two components of grinding forces (normal and tangential) were measured for different types of silicon nitride ceramics. The influences of grinding parameters, such as down feed and table speed, and grinding fluids on forces were determined. In addition to these measurements, the specific grinding energy defined as the energy per unit volume of removed material was calculated. This parameter and the measured forces were then analyzed to determine possible correlations with mechanical properties of the silicon nitrides. It was found that, in general, the grinding forces and the specific grinding energy increase with the hardness. Both the grinding forces and the specific grinding energy were influenced by the grinding fluid and the grinding parameters. The implication of these results on the mechanisms of material removal in grinding of silicon nitride and the possible tribological effects are discussed.

  16. Cooled silicon nitride stationary turbine vane risk reduction. Final report

    SciTech Connect

    Holowczak, John

    1999-12-31

    The purpose of this program was to reduce the technical risk factors for demonstration of air cooled silicon nitride turbine vanes. The effort involved vane prototype fabrication efforts at two U.S. based gas turbine grade silicon nitride component manufacturers. The efficacy of the cooling system was analyzed via a thermal time/temperature flow test technique previously at UTRC. By having multiple vendors work on parts fabrication, the chance of program success increased for producing these challenging components. The majority of the effort under this contract focused on developing methods for, and producing, the complex thin walled silicon nitride vanes. Components developed under this program will undergo engine environment testing within N00014-96-2-0014.

  17. Tensile creep in an in situ reinforced silicon nitride

    SciTech Connect

    Gasdaska, C.J. . Corporate Research and Technology)

    1994-09-01

    The tensile creep of an in situ reinforced silicon nitride is described in terms of the rheological behavior of the thin intergranular film present in this liquid-phase sintered silicon nitride. The high stress exponents and apparent activation energies (at constant stress) can be explained assuming non-Newtonian flow behavior of the film during grain boundary sliding. Time-to-failure is related to the minimum creep rate, even for samples which fail by slow crack growth. In addition, the primary creep region and the relaxation effects observed on unloading are described in terms of grain boundary sliding modified by the presence of a grain boundary phase with a lower elastic modulus than silicon nitride.

  18. Ceramics based on titanium nitride and silicon nitride sintered by SPS-method

    NASA Astrophysics Data System (ADS)

    Sivkov, A. A.; Gerasimov, D. Yu; Evdokimov, A. A.

    2015-10-01

    The dependences of the microstructure and physical and mechanical properties of ceramic mixtures Si3N4/TiN in the full range of mass ratios of the components. Was also investigated directly, and the process of sintering occurring during a physical or chemical processes, in particular, has been obtained and the hardness of the material density on the ratio of the conductive titanium nitride phase and a silicon nitride insulating phase with values above and below the percolation threshold. Also obtained was pure ceramics based on titanium nitride with high physical-mechanical characteristics (H = 21.5 GPa).

  19. Cycling endurance of silicon{endash}oxide{endash}nitride{endash}oxide{endash}silicon nonvolatile memory stacks prepared with nitrided SiO{sub 2}/Si(100) interfaces

    SciTech Connect

    Habermehl, S.; Nasby, R.D.; Rightley, M.J.

    1999-08-01

    The effects of nitrided SiO{sub 2}/Si(100) interfaces upon cycling endurance in silicon{endash}oxide{endash}nitride{endash}oxide{endash}silicon (SONOS) nonvolatile memory transistors are investigated. Analysis of metal{endash}oxide{endash}silicon field-effect transistor subthreshold characteristics indicate cycling degradation to be a manifestation of interface trap generation at the tunnel oxide/silicon interface. After 10{sup 6} write/erase cycles, SONOS film stacks prepared with nitrided tunnel oxides exhibit enhanced cycling endurance over stacks prepared with non-nitrided tunnel oxides. If the capping oxide is formed by steam oxidation, rather than by deposition, SONOS stacks prepared with non-nitrided tunnel oxides exhibit endurance characteristics similar to stacks with nitrided tunnel oxides. For this case, a mechanism for latent nitridation of the tunnel oxide/silicon interface is proposed. {copyright} {ital 1999 American Institute of Physics.}

  20. Fabrication of sinterable silicon nitride by injection molding

    NASA Technical Reports Server (NTRS)

    Quackenbush, C. L.; French, K.; Neil, J. T.

    1982-01-01

    Transformation of structural ceramics from the laboratory to production requires development of near net shape fabrication techniques which minimize finish grinding. One potential technique for producing large quantities of complex-shaped parts at a low cost, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material. Binder selection methodology, compounding of ceramic and binder components, injection molding techniques, and problems in binder removal are discussed. Strength, oxidation resistance, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material.

  1. Plasma deposited silicon nitride for indium phosphide encapsulation

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.; Biedenbender, M. D.; Williams, W. D.

    1989-01-01

    The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

  2. Low temperature silicon nitride waveguides for multilayer platforms

    NASA Astrophysics Data System (ADS)

    Domínguez Bucio, T.; Tarazona, A.; Khokhar, A. Z.; Mashanovich, G. Z.; Gardes, F. Y.

    2016-05-01

    Several 3D multilayer silicon photonics platforms have been proposed to provide densely integrated structures for complex integrated circuits. Amongst these platforms, great interest has been given to the inclusion of silicon nitride layers to achieve low propagation losses due to their capacity of providing tight optical confinement with low scattering losses in a wide spectral range. However, none of the proposed platforms have demonstrated the integration of active devices. The problem is that typically low loss silicon nitride layers have been fabricated with LPCVD which involves high processing temperatures (<1000 ºC) that affect metallisation and doping processes that are sensitive to temperatures above 400ºC. As a result, we have investigated ammonia-free PECVD and HWCVD processes to obtain high quality silicon nitride films with reduced hydrogen content at low temperatures. Several deposition recipes were defined through a design of experiments methodology in which different combinations of deposition parameters were tested to optimise the quality and the losses of the deposited layers. The physical, chemical and optical properties of the deposited materials were characterised using different techniques including ellipsometry, SEM, FTIR, AFM and the waveguide loss cut-back method. Silicon nitride layers with hydrogen content between 10-20%, losses below 10dB/cm and high material quality were obtained with the ammonia-free recipe. Similarly, it was demonstrated that HWCVD has the potential to fabricate waveguides with low losses due to its capacity of yielding hydrogen contents <10% and roughness <1.5nm.

  3. Nitridation of silicon /111/ - Auger and LEED results

    NASA Technical Reports Server (NTRS)

    Delord, J. F.; Schrott, A. G.; Fain, S. C., Jr.

    1980-01-01

    Clean silicon (111) (7x7) surfaces at up to 1050 C have been reacted with nitrogen ions and neutrals produced by a low energy ion gun. The LEED patterns observed are similar to those previously reported for reaction of silicon (111) (7x7) with NH3. The nitrogen KLL peak exhibits no shift or change in shape with nitride growth. At the same time the magnitude of the elemental silicon LVV peak at 92 eV decreases progressively as a new peak at 84 eV increases. The position of both peaks appears to be independent of the degree of nitridation. Since the Auger spectra are free of oxygen and other impurities, these features can be attributed only to silicon, nitrogen, and their reaction products. Characteristic features of the Auger spectra are related to LEED observations and to the growth of microcrystals of Si3N4.

  4. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  5. Method for one-to-one polishing of silicon nitride and silicon oxide

    NASA Technical Reports Server (NTRS)

    Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

    2009-01-01

    The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

  6. Silicon nitride coated silicon thin film on three dimensions current collector for lithium ion battery anode

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-Yu; Chang, Chun-Chi; Duh, Jenq-Gong

    2016-09-01

    Silicon nitride coated silicon (N-Si) has been synthesized by two-step DC sputtering on Cu Micro-cone arrays (CMAs) at ambient temperature. The electrochemical properties of N-Si anodes with various thickness of nitride layer are investigated. From the potential window of 1.2 V-0.05 V, high rate charge-discharge and long cycle test have been executed to investigate the electrochemical performances of various N-Si coated Si-based lithium ion batteries anode materials. Higher specific capacity can be obtained after 200 cycles. The cycling stability is enhanced via thinner nitride layer coating as silicon nitride films are converted to Li3N with covered Si thin films. These N-Si anodes can be cycled under high rates up to 10 C due to low charge transfer resistance resulted from silicon nitride films. This indicates that the combination of silicon nitride and silicon can effectively endure high current and thus enhance the cycling stability. It is expected that N-Si is a potential candidate for batteries that can work effectively under high power.

  7. Stability and rheology of dispersions of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1987-01-01

    The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide and silicon nitride powders was examined by a variety of standard characterization techniques and by methodologies especially developed for ceramic dispersions. These include electrokinetic measurement, surface titration, and surface spectroscopies. The effects of powder pretreatment and modification strategies, which can be utilized to augment control of processing characteristics, were monitored with these technologies. Both silicon carbide and nitride were found to exhibit silica-like surface chemistries, but silicon nitride powders possess an additional amine surface functionality. Colloidal characteristics of the various nitride powders in aqueous suspension is believed to be highly dependent on the relative amounts of the two types of surface groups, which in turn is determined by the powder synthesis route. The differences in the apparent colloidal characteristics for silicon nitride powders cannot be attributed to the specific absorption of ammonium ions. Development of a model for the prediction of double-layer characteristics of materials with a hybrid site interface facilitated understanding and prediction of the behavior of both surface charge and surface potential for these materials. The utility of the model in application to silicon nitride powders was demonstrated.

  8. Strength and toughness of monolithic and composite silicon nitrides

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.

    1990-01-01

    The strength and toughness of two composite and two monolithic silicon nitrides were measured from 25 to 1400 C. The monolithic and composite materials were made from similar starting powders. Both of the composite materials contained 30 vol percent silicon carbide whiskers. All measurements were made by four point flexure in surrounding air and humidity. The composite and monolithic materials exhibited similar fast fracture properties as a function of temperature.

  9. Silicon Nitride for Direct Water-Splitting and Corrosion Mitigation

    SciTech Connect

    Head, J.; Turner, J.A.

    2006-01-01

    Todays fossil fuels are becoming harder to obtain, creating pollution problems, and posing hazards to people’s health. One alternative to fossil fuels is hydrogen, capable of serving as a clean and efficient energy carrier. Certain semiconductors are able to harness the energy of photons and direct it into water electrolysis in a process known as photoelectrochemical water splitting. Triple junction devices integrate three semiconductors of different band gaps resulting in a monolithic material that absorbs over a broader spectrum. Amorphous silicon (a-Si) is one such material that, when stacked in tandem, possesses water-splitting capabilities. Even though a-Si is capable of splitting water, it is an unstable material in solution and therefore requires a coating to protect the surface from corrosion. A stable, transparent material that has the potential for corrosion protection is silicon nitride. In this study, silicon nitride thin films were grown using DC magnetron sputtering with varying amounts of argon and nitrogen added to the system. X-ray diffraction indicated amorphous silicon nitride films. Current as a function of potential was determined from cyclic voltammetry measurements. Mott-Schottky analysis showed n-type behavior with absorption and transmission measurements indicated variation in flatband potentials. Variation in band gap values ranging from 1.90 to 4.0 eV. Corrosion measurements reveal that the silicon nitride samples exhibit both p-type and n-type behavior. Photocurrent over a range of potentials was greater in samples that were submerged in acidic electrolyte. Silicon nitride shows good stability in acidic, neutral, and basic solutions, indicative of a good material for corrosion mitigation.

  10. Gelcasting of silicon preforms for the production of sintered reaction-bonded silicon nitride

    SciTech Connect

    Kiggans, J.O. Jr.; Nunn, S.D.; Tiegs, T.N.; Davisson, C.C.; Coffey, D.W.; Maria, J.P.

    1995-12-31

    Gelcasting of silicon metal for the production of sintered reaction-bonded silicon nitride (SRBSN) was investigated in order to identify associated advantages over conventional forming techniques, i.e., die and isostatic pressing. Compacts were formed from identical powder mixtures by both gelcasting and pressing, and were nitrided and sintered to produce SRBSN ceramics using both conventional and microwave heating. Characterization of the samples included measurement of green density, green and nitrided pore structure, weight gain during nitridation, final density, microstructure, toughness, and flexural strength. It was found that a more uniform pore structure existed in the green gelcast samples. It is believed that this pore configuration aided in nitridation, and manifested itself in a more uniform final microstructure. In addition, improved mechanical properties were achieved in the gelcast samples. This improvement can be attributed to green microstructure homogeneity. An additional finding of this study was that microwave hearing combined with gelcast forming resulted in SRBSN materials with improved mechanical properties.

  11. Nitridation of silicon under high pressure

    SciTech Connect

    Heinrich, J. )

    1987-07-01

    The microstructure of reaction-bonded Si{sub 3}N{sub 4} was changed by nitriding Si powder compacts at 0, 1, and 50 MPa. The microstructural parameters were analyzed using light and scanning electron microscopy, XRD, and mercury pressure porosimetry. The influence of the nitriding gas pressure on the ratio of the crystallographic Si{sub 3}N{sub 4} phases {alpha} and {beta}, the pore size distribution, and the resulting mechanical properties has been investigated. High nitrogen pressure promotes the formation of {beta}-Si{sub 3}N{sub 4} and leads to a fine-grained homogeneous microstructure, with improved fracture strength and fracture toughness.

  12. Silicon nitride films deposited with an electron beam created plasma

    NASA Astrophysics Data System (ADS)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-03-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  13. Development of a continuous spinning process for producing silicon carbide - silicon nitride precursor fibers

    NASA Technical Reports Server (NTRS)

    1985-01-01

    An apparatus was designed for the continuous production of silicon carbide - silicon nitride precursor fibers. The precursor polymer can be fiberized, crosslined and pyrolyzed. The product is a metallic black fiber with the composition of the type C sub x Si sub y n sub z. Little, other than the tensile strength and modulus of elasticity, is known of the physical properties.

  14. Microwave processing of silicon nitride for advanced gas turbine applications

    SciTech Connect

    Tiegs, T.N.; Kiggans, J.O.

    1993-04-01

    Results from previous studies on microwave processing of silicon nitride-based ceramics are reviewed to ascertain the application of this technology to advanced gas turbine (AGT) materials. Areas of microwave processing that have been examined in the past are (1) sintering of powder compacts; (2) heat treatment of dense materials; and (3) nitridation of Si for reactionbonded silicon nitride. The sintering of Si{sub 3}N{sub 4} powder compacts showed improved densification and enhanced grain growth. However, the high additive levels required to produce crack-free parts generally limit these materials to low temperature applications. Improved high-temperature creep resistance has been observed for microwave heat-treated materials and therefore has application to materials used in highly demanding service conditions. In contrast to Si{sub 3}N{sub 4}, Si couples well in the microwave and sintered reaction-bonded silicon nitride materials have been fabricated in a one-step process with cost-effective raw materials. However, these materials are also limited to lower temperature applications, under about 1000{degrees}C.

  15. Microwave processing of silicon nitride for advanced gas turbine applications

    SciTech Connect

    Tiegs, T.N.; Kiggans, J.O.

    1993-01-01

    Results from previous studies on microwave processing of silicon nitride-based ceramics are reviewed to ascertain the application of this technology to advanced gas turbine (AGT) materials. Areas of microwave processing that have been examined in the past are (1) sintering of powder compacts; (2) heat treatment of dense materials; and (3) nitridation of Si for reactionbonded silicon nitride. The sintering of Si[sub 3]N[sub 4] powder compacts showed improved densification and enhanced grain growth. However, the high additive levels required to produce crack-free parts generally limit these materials to low temperature applications. Improved high-temperature creep resistance has been observed for microwave heat-treated materials and therefore has application to materials used in highly demanding service conditions. In contrast to Si[sub 3]N[sub 4], Si couples well in the microwave and sintered reaction-bonded silicon nitride materials have been fabricated in a one-step process with cost-effective raw materials. However, these materials are also limited to lower temperature applications, under about 1000[degrees]C.

  16. Polyorganosilazane preceramic binder development for reaction bonded silicon nitride composites

    SciTech Connect

    Mohr, D.L.; Starr, T.L. )

    1992-11-01

    This study has examined the use of two commercially available polyorganosilazanes for application as preceramic binders in a composite composed of silicon carbide fibers in a reaction bonded silicon nitride (RBSN) matrix. Ceramic monolithic and composite samples were produced. Density of monolithic and whisker reinforced RBSN samples containing the polysilazane binder was increased. Mercury intrusion porosimetry revealed a significant decrease in the pore sizes of samples containing a polyorganosilazane binder. Electron micrographs of samples containing the preceramic binder looked similar to control samples containing no precursor. Overall, incorporation of the polysilazane into monolithic and whisker reinforced samples resulted in significantly increased density and decreased porosity. Nitriding of the RBSN was slightly retarded by addition of the polysilazane binder. Samples with the preceramic binders contained increased contents of [alpha] versus [beta]-silicon nitride which may be due to interaction of hydrogen evolved from polysilazane pyrolysis with the nitriding process. Initial efforts to produce continuous fiber reinforced composites via this method have not realized the same improvements in density and porosity which have been observed for monolithic and whisker reinforced samples. Further, the addition of perceramic binder resulted in a more brittle fracture morphology as compared to similar composites made without the binder.

  17. Polyorganosilazane preceramic binder development for reaction bonded silicon nitride composites

    SciTech Connect

    Mohr, D.L.; Starr, T.L.

    1992-11-01

    This study has examined the use of two commercially available polyorganosilazanes for application as preceramic binders in a composite composed of silicon carbide fibers in a reaction bonded silicon nitride (RBSN) matrix. Ceramic monolithic and composite samples were produced. Density of monolithic and whisker reinforced RBSN samples containing the polysilazane binder was increased. Mercury intrusion porosimetry revealed a significant decrease in the pore sizes of samples containing a polyorganosilazane binder. Electron micrographs of samples containing the preceramic binder looked similar to control samples containing no precursor. Overall, incorporation of the polysilazane into monolithic and whisker reinforced samples resulted in significantly increased density and decreased porosity. Nitriding of the RBSN was slightly retarded by addition of the polysilazane binder. Samples with the preceramic binders contained increased contents of {alpha} versus {beta}-silicon nitride which may be due to interaction of hydrogen evolved from polysilazane pyrolysis with the nitriding process. Initial efforts to produce continuous fiber reinforced composites via this method have not realized the same improvements in density and porosity which have been observed for monolithic and whisker reinforced samples. Further, the addition of perceramic binder resulted in a more brittle fracture morphology as compared to similar composites made without the binder.

  18. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    PubMed

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses <100 nm were grown at 3 and 10 °C between 0.5 and 3 h, with mean grain sizes between ∼20 and 30 nm. The method is compatible with plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces. PMID:24999923

  19. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications, phase 2

    NASA Astrophysics Data System (ADS)

    Sundberg, G. J.; Vartabedian, A. M.; Wade, J. A.; White, C. S.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP'ed Si3N4 with 4wt% Y2O3 (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  20. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    SciTech Connect

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  1. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOEpatents

    Raj, Rishi; Baik, Sunggi

    1985-11-12

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  2. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOEpatents

    Raj, R.; Baik, S.

    1985-11-12

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  3. Thermodynamics of silicon nitridation - Effect of hydrogen

    NASA Technical Reports Server (NTRS)

    Shaw, N. J.; Zeleznik, F. J.

    1982-01-01

    Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

  4. Silicon Nitride: A Synthetic Mineral for Vertebrate Biology.

    PubMed

    Pezzotti, Giuseppe; McEntire, Bryan J; Bock, Ryan; Boffelli, Marco; Zhu, Wenliang; Vitale, Eleonora; Puppulin, Leonardo; Adachi, Tetsuya; Yamamoto, Toshiro; Kanamura, Narisato; Bal, B Sonny

    2016-01-01

    The remarkable stoichiometric flexibility of hydroxyapatite (HAp) enables the formation of a variety of charged structural sites at the material's surface which facilitates bone remodeling due to binding of biomolecule moieties in zwitterionic fashion. In this paper, we report for the first time that an optimized biomedical grade silicon nitride (Si3N4) demonstrated cell adhesion and improved osteoconductivity comparable to highly defective, non-stoichiometric natural hydroxyapatite. Si3N4's zwitterionic-like behavior is a function of the dualism between positive and negative charged off-stoichiometric sites (i.e., N-vacancies versus silanols groups, respectively). Lattice defects at the biomaterial's surface greatly promote interaction with positively- and negatively-charged functional groups in biomolecules, and result in the biologically effective characteristics of silicon nitride. These findings are anticipated to be a starting point for further discoveries of therapeutic bone-graft substitute materials. PMID:27539146

  5. Development of moldable, high density reaction bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Mangels, J. A.

    1980-01-01

    It is noted that currently available reaction bonded silicon nitride (RBSN) materials are limited by relatively low strength (up to 300 MPa) and oxidation resistance, primarily due to open porosity. Attention is given to technology that was developed and used to produce an improved grade of injection molded RBSN having a density of 2.8 g/cc, with significantly decreased open porosity and a strength exceeding 350 MPa. It is shown that these results are primarily due to advances in two areas: silicon powder processing, and nitriding technique. A comparison of room temperature strength and oxidation resistance of the new material with that of state-of-the-art RBSN, showed significant improvements. It is concluded that turbine stator vanes were produced to show that this improved RBSN technology has been reduced to engineering practice.

  6. Silicon nitride hybrid bearing fatigue life comparisons. Technical report

    SciTech Connect

    Robinson, E.

    1999-01-15

    Research to improve high-speed ball bearings for spacecraft applications has led to development of ceramic materials for bearing components, and the need to acquire sufficient fatigue life data to show the merits of various ceramic materials and fabrication processes, in comparison with the vast amount of steel bearing fatigue data acquired over many decades. In order to eliminate bias from such evaluations it is best to conduct comparative fatigue tests with steel bearings that are geometrically similar and in the same type of test rig. This report addresses some recent fatigue tests of hybrid bearings with silicon nitride (Si{sub 3}N{sub 4}) balls and Crucible Steel Company M62 steel raceways and a comparison set of all 52100 steel bearings. Results indicate that the bearings with ceramic (silicon nitride) balls are superior to the steel bearings.

  7. High-precision silicon nitride balls for bearings

    NASA Astrophysics Data System (ADS)

    Cundill, Robin T.

    1992-04-01

    Hybrid ceramic bearings are now commercially available for use in high performance applications where the properties of the ceramic balls give advantages in terms of higher operating speeds, increased stiffness, lower fraction and less heat generation. Most hybrid bearings are high precision angular contact ball bearings fitted with silicon nitride balls, which have to be finished to ISO dimensional grades 3 and 5. Ball diameter variation and deviation from the spherical form has to be less than 0.125 micrometers for Grade 5 balls and less than 0.08 micrometers for Grade 3 balls. Surface finish of silicon nitride balls is typically 0.003 - 0.010 micrometers Rq (0.002 - 0.008 micrometers Ra). At this level, the basic material microstructures is discernible which facilitates inspection for material and other faults.

  8. Silicon Nitride: A Synthetic Mineral for Vertebrate Biology

    PubMed Central

    Pezzotti, Giuseppe; McEntire, Bryan J.; Bock, Ryan; Boffelli, Marco; Zhu, Wenliang; Vitale, Eleonora; Puppulin, Leonardo; Adachi, Tetsuya; Yamamoto, Toshiro; Kanamura, Narisato; Bal, B. Sonny

    2016-01-01

    The remarkable stoichiometric flexibility of hydroxyapatite (HAp) enables the formation of a variety of charged structural sites at the material’s surface which facilitates bone remodeling due to binding of biomolecule moieties in zwitterionic fashion. In this paper, we report for the first time that an optimized biomedical grade silicon nitride (Si3N4) demonstrated cell adhesion and improved osteoconductivity comparable to highly defective, non-stoichiometric natural hydroxyapatite. Si3N4’s zwitterionic-like behavior is a function of the dualism between positive and negative charged off-stoichiometric sites (i.e., N-vacancies versus silanols groups, respectively). Lattice defects at the biomaterial’s surface greatly promote interaction with positively- and negatively-charged functional groups in biomolecules, and result in the biologically effective characteristics of silicon nitride. These findings are anticipated to be a starting point for further discoveries of therapeutic bone-graft substitute materials. PMID:27539146

  9. Synthesis of silicon nitride particles in pulsed radio frequency plasmas

    SciTech Connect

    Buss, R.J.; Babu, S.V.

    1996-03-01

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 MHz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. {ital In} {ital situ} laser light scattering and {ital ex} {ital situ} particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10{endash}100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but nonspherical. Postplasma oxidation kinetics of the particles are studied with Fourier transform infrared spectra and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation. {copyright} {ital 1996 American Vacuum Society}

  10. Synthesis of silicon nitride particles in pulsed Rf plasmas

    SciTech Connect

    Buss, R.J.; Babu, S.V.

    1995-11-01

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 Mhz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. In situ laser light scattering and ex situ particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10-100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but non-spherical. Post-plasma oxidation kinetics of the particles are studied with FTIR and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation.

  11. The hardness and toughness of HIPed silicon nitride

    SciTech Connect

    Berriche, R.; Holt, R.T.; Kumar, S.N.; Maccagno, T.M.

    1992-10-01

    Silicon nitride with and without additives has been produced by hot isostatic pressing under different conditions. The HIP cycle parameters and grade of powder used have been found to affect the density, the hardness and the fracture toughness of the material produced. Sintering aids, on the other hand, have been found to affect the fracture toughness only. Materials HIPed with additives displayed a higher fracture toughness than materials HIPed without additives. 12 refs.

  12. Corrosion of silicon nitride in high temperature alkaline solutions

    NASA Astrophysics Data System (ADS)

    Qiu, Liyan; Guzonas, Dave A.; Qian, Jing

    2016-08-01

    The corrosion of silicon nitride (Si3N4) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si3N4 experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

  13. Tissue response around silicon nitride implants in rabbits.

    PubMed

    Guedes e Silva, Cecilia C; König, Bruno; Carbonari, Marcelo José; Yoshimoto, Marcelo; Allegrini, Sérgio; Bressiani, José Carlos

    2008-02-01

    The chemical and dimensional stability associated with suitable fracture toughness and propitious tribological characteristics make silicon nitride-based ceramics potential candidates for biomedical applications, mainly as orthopedic implants. Considering this combination of properties, silicon nitride components were investigated in relation to their biocompatibility. For this study, two cylindrical implants were installed in each tibia of five rabbits and were kept in the animals for 8 weeks. During the healing time, tissue tracers were administrated in the animals so as to evaluate the bone growth around the implants. Eight weeks after the surgery, the animals were euthanized and histological analyses were performed. No adverse reactions were observed close to the implant. The osteogenesis process occurred during the entire period defined by the tracers. However, this process occurred more intensely 4 weeks after the surgery. In addition, the histological analyses showed that bone growth occurred preferentially in the cortical areas. Different kinds of tissue were identified on the implant surface, characterized by lamellar bone tissue containing osteocytes and osteons, by a noncalcified matrix containing osteoblasts, or by the presence of collagen III, which may change to collagen I or remain as a fibrous tissue. The results demonstrated that silicon nitride obtained according to the procedure proposed in this research is a biocompatible material. PMID:17607762

  14. Fatigue life of high-speed ball bearings with silicon nitride balls

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1974-01-01

    Evaluation of hot-pressed silicon nitride as a rolling-element bearing material. Two grades of hot-pressed silicon nitride balls were tested under rolling contact conditions in a five-ball fatigue tester. A digital computer program was used to predict the dynamic performance characteristics and fatigue life of high-speed ball bearings with silicon nitride balls relative to that with bearings containing steel balls. The results obtained include the finding that fatigue spalls on silicon nitride balls are similar in appearance to those obtained with typical bearing steels.

  15. Catalytic Effects of Cr on Nitridation of Silicon and Formation of One-dimensional Silicon Nitride Nanostructure

    PubMed Central

    Liang, Feng; Lu, Lilin; Tian, Liang; Li, Faliang; Zhang, Haijun; Zhang, Shaowei

    2016-01-01

    The catalytic effects of chromium (Cr) on the direct nitridation of silicon (Si) and morphology of nitridation product were investigated. Cr dramatically improved the conversation of Si to silicon nitride (Si3N4). The complete conversion was achieved at 1350 °C upon addition of 1.25 wt% Cr. This temperature was much lower than that required in the case without using a catalyst. Meanwhile, Cr played an important role in the in-situ growth of one-dimensional (1-D) α-Si3N4 nanostructures. α-Si3N4 nanowires and nanobelts became the primary product phases when 5 wt% Cr was used as the catalyst. The growth processes of the 1-D α-Si3N4 nanostructures were governed by the vapor-solid mechanism. First-principle calculations suggest that electrons can be transferred from Cr atoms to N atoms, facilitating the Si nitridation. PMID:27527681

  16. Catalytic Effects of Cr on Nitridation of Silicon and Formation of One-dimensional Silicon Nitride Nanostructure.

    PubMed

    Liang, Feng; Lu, Lilin; Tian, Liang; Li, Faliang; Zhang, Haijun; Zhang, Shaowei

    2016-01-01

    The catalytic effects of chromium (Cr) on the direct nitridation of silicon (Si) and morphology of nitridation product were investigated. Cr dramatically improved the conversation of Si to silicon nitride (Si3N4). The complete conversion was achieved at 1350 °C upon addition of 1.25 wt% Cr. This temperature was much lower than that required in the case without using a catalyst. Meanwhile, Cr played an important role in the in-situ growth of one-dimensional (1-D) α-Si3N4 nanostructures. α-Si3N4 nanowires and nanobelts became the primary product phases when 5 wt% Cr was used as the catalyst. The growth processes of the 1-D α-Si3N4 nanostructures were governed by the vapor-solid mechanism. First-principle calculations suggest that electrons can be transferred from Cr atoms to N atoms, facilitating the Si nitridation. PMID:27527681

  17. Subcritical crack-growth behavior in advanced silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Bhatnagar, Ajay

    Advanced silicon nitride ceramics (Sisb3Nsb4) are leading candidates for structural components in gas turbine and reciprocating engines. However, widespread use of these materials has been deterred due to their low fracture toughness under tensile loads. In the last decade, novel processing techniques have allowed extrinsic toughening of this material through grain bridging processes. The extrinsic toughening mechanisms, however, are prone to subcritical crack-growth processes through environmental, mechanical and high temperature degradation mechanisms. Understanding these failure mechanisms is critical for long term reliability and design. In the first part of this study, fracture and environmentally-assisted subcritical crack-growth processes were examined in bulk Y-Si-Al-O-N oxynitride glasses with compositions typical of the grain boundary phase of silicon nitride ceramics. Both long crack as well as short crack behavior were investigated to establish a reliable fracture toughness value and to elucidate the anomalous densification behavior of the oxynitride glass under indentation loads. Environmentally assisted subcritical crack-growth processes were studied in inert, moist and wet environments under both cyclic and static loading conditions and compared to commercial soda lime and borosilicate glasses. The second part of this study involved the effect of loading, microstructure and temperature on subcritical crack-growth behavior in silicon nitride ceramics. Crack-growth rates under an alternating applied stress intensity were compared to those under static loads. The effect of microstructure on fatigue crack-growth rates was determined in silicon nitrides sintered using different processing techniques and with different grain sizes. Unique experimental techniques were used to determine subcritical crack-growth behavior from room temperature to elevated temperatures of 1250sp°C. Frictional wear models were used to explain the trends in experimental data at

  18. Deep-UV nitride-on-silicon microdisk lasers

    NASA Astrophysics Data System (ADS)

    Sellés, J.; Brimont, C.; Cassabois, G.; Valvin, P.; Guillet, T.; Roland, I.; Zeng, Y.; Checoury, X.; Boucaud, P.; Mexis, M.; Semond, F.; Gayral, B.

    2016-02-01

    Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10-4. The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon.

  19. Deep-UV nitride-on-silicon microdisk lasers

    PubMed Central

    Sellés, J.; Brimont, C.; Cassabois, G.; Valvin, P.; Guillet, T.; Roland, I.; Zeng, Y.; Checoury, X.; Boucaud, P.; Mexis, M.; Semond, F.; Gayral, B.

    2016-01-01

    Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10−4. The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon. PMID:26887701

  20. Stress relaxation in Si-rich silicon nitride thin films

    SciTech Connect

    Habermehl, S.

    1998-05-01

    Si-rich silicon nitride thin films have been deposited by low pressure chemical vapor deposition, at 850{degree}C from mixtures of dichlorosilane and ammonia. The films{close_quote} elastic properties have been studied as a function of film composition. Fourier transform infrared spectroscopy and ellipsometric data indicate that the local atomic strain is a strong function of the calculated volume fraction of Si contained in the films. A relationship is observed that shows the strain to be inversely proportional to the cube root of the Si volume fraction. A model that accounts for distortion in Si{endash}Si{sub x}N{sub 4{minus}x} tetrahedra (x=0{endash}4), upon substitution of silicon for nitrogen in the film is applied to the data. The model is shown to be consistent with measurements of intrinsic film stress across a compositional range from stoichiometric silicon nitride, Si{sub 3}N{sub 4}, to nitrogen-free amorphous silicon, a-Si. {copyright} {ital 1998 American Institute of Physics.}

  1. First-principles study of silicon nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Gao, Guohua; Kang, Hong Seok

    2008-10-01

    We have made a first-principles calculation of the topological, geometric, and electronic structures of nitrogen-doped armchair and zigzag silicon carbide nanotubes, where we have assumed that all carbon atoms have been substituted by nitrogen atoms. The doping was found to be substantially easier than for analogous carbon nanotubes. In addition, the doping process is cooperative, leading us to theoretically predict the stable existence of silicon nitride nanotubes (SiNNTs). For (n,n) SiNNTs, all kinds of chiral indices n are possible. These armchair tubes are semiconductors with much smaller band gaps than those of corresponding silicon carbide nanotubes, and the gap decreases with the tube diameter. For (n,0) chirality, only even-numbered chiral indices (n=2l) are possible. These nanotubes are also semiconductors with band gaps larger than those of armchair SiNNTs of similar diameters.

  2. Development of silicon nitride composites with continuous fiber reinforcement

    SciTech Connect

    Starr, T.L.; Mohr, D.L.; Lackey, W.J.; Hanigofsky, J.A.

    1993-10-01

    The composites were fabricated using ultrafine Si powders prepared by attritor milling; the powders exhibits full conversion to Si nitride in < 3 h at {le} 1200 C (these conditions reduce degradation of the fibers compared to conventional). Effects of processing conditions on fiber properties and the use of fiber coatings to improve stability during processing as well as change the fiber-matrix interfacial properties were investigated. A duplex carbon-silicon carbide coating, deposited by CVD, reduced fiber degradation in processing, and it modified the fiber-matrix adhesion. Si nitride matrix composites were fabricated using reaction sintering, forming laminates, filament-wound plates, and tubes. In each case, an attritor milled Si powder slurry is infiltrated into ceramic fiber preforms or tows, which are then assembled to form a 3-D structure for reaction sintering. The resulting composites have properties comparable to chemical vapor infiltration densified composites, with reasonable strengths and graceful composite fracture behavior.

  3. Atomistic models of hydrogenated amorphous silicon nitride from first principles

    NASA Astrophysics Data System (ADS)

    Jarolimek, K.; de Groot, R. A.; de Wijs, G. A.; Zeman, M.

    2010-11-01

    We present a theoretical study of hydrogenated amorphous silicon nitride (a-SiNx:H) , with equal concentrations of Si and N atoms (x=1) , for two considerably different densities (2.0 and 3.0g/cm3 ). Densities and hydrogen concentration were chosen according to experimental data. Using first-principles molecular-dynamics within density-functional theory the models were generated by cooling from the liquid. Where both models have a short-range order resembling that of crystalline Si3N4 because of their different densities and hydrogen concentrations they show marked differences at longer length scales. The low-density nitride forms a percolating network of voids with the internal surfaces passivated by hydrogen. Although some voids are still present for the high-density nitride, this material has a much denser and uniform space filling. The structure factors reveal some tendency for the nonstoichiometric high-density nitride to phase separate into nitrogen rich and poor areas. For our slowest cooling rate (0.023 K/fs) we obtain models with a modest number of defect states, where the low (high) density nitride favors undercoordinated (overcoordinated) defects. Analysis of the structural defects and electronic density of states shows that there is no direct one-to-one correspondence between the structural defects and states in the gap. There are several structural defects that do not contribute to in-gap states and there are in-gap states that do only have little to no contributions from (atoms in) structural defects. Finally an estimation of the size and cooling rate effects on the amorphous network is reported.

  4. RF-sputtered silicon and hafnium nitrides - Properties and adhesion to 440C stainless steel

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1983-01-01

    Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or 100 kg/sq mm was measured for hafnium nitride and 3900 + or 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

  5. RF sputtered silicon and hafnium nitrides: Properties and adhesion to 440C stainless steel

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1982-01-01

    Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or - 100 kg/sq mm was measured for hafnium nitride and 3900 + or - 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

  6. Rolling-element fatigue life of silicon nitride balls: Preliminary test results

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1972-01-01

    Hot pressed silicon nitride was evaluated as a rolling element bearing material. The five-ball fatigue tester was used to test 12.7 mm (0.500 in.) diameter balls at a maximum Hertz stress of 800,000 psi at a race temperature of 130 F. The fatigue spalls in the silicon nitride resembled those in typical bearing steels. The ten-percent fatigue life of the silicon nitride balls was approximately one-eighth to one-fifth that of typical bearing steels (52100 and M-50). The load capacity of the silicon nitride was approximately one-third that of typical bearing steels. The load capacity of the silicon nitride was significantly higher than previously tested ceramic materials for rolling element bearings.

  7. Nanostructured silicon nitride from wheat and rice husks

    NASA Astrophysics Data System (ADS)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Wollmershauser, J. A.; Feng, C. R.

    2016-04-01

    Nanoparticles, submicron-diameter tubes, and rods of Si3N4 were synthesized from the thermal treatment of wheat and rice husks at temperatures at and above 1300 °C in a nitrogen atmosphere. The whole pattern Rietveld analysis of the observed diffraction data from treatments at 1300 °C showed the formation of only hexagonal α-phase of Si3N4 with an R-factor of 1%, whereas samples treated at 1400 °C and above showed both α- and β-phases with an R-factor of 2%. Transmission electron microscopy showed the presence of tubes, rods, and nanoparticles of Si3N4. In a two-step process, where pure SiC was produced first from rice or wheat husk in an argon atmosphere and subsequently treated in a nitrogen atmosphere at 1450 °C, a nanostructured composite material having α- and β-phases of Si3N4 combined with cubic phase of SiC was formed. The thermodynamics of the formation of silicon nitride is discussed in terms of the solid state reaction between organic matter (silica content), which is inherently present in the wheat and rice husks, with the nitrogen from the furnace atmosphere. Nanostructures of silicon nitride formed by a single direct reaction or their composites with SiC formed in a two-step process of agricultural byproducts provide an uncomplicated sustainable synthesis route for silicon nitride used in mechanical, biotechnology, and electro-optic nanotechnology applications.

  8. Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

    NASA Technical Reports Server (NTRS)

    Bhatt, R. T.; Palczer, A. R.

    1998-01-01

    Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

  9. Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators

    NASA Astrophysics Data System (ADS)

    Waggoner, P. S.; Tan, C. P.; Craighead, H. G.

    2010-06-01

    Thin silicon dioxide films are deposited on nanomechanical resonators using atomic layer deposition (ALD), and their effect on the resonant properties of silicon nitride devices is studied as a function of thickness. We present experimental data and an analytical model for the effect of ALD growth and corroborate the model by studying resonators coated with atomic layer deposited aluminum nitride as well. As thicker films are deposited, device frequency shifts, become nonlinear with thickness, and quality factors drop significantly. Thin silicon dioxide coatings can be deposited on virtually any device surface to support surface chemistries commonly used in biochemical functionalization on glass surfaces. We also demonstrate that the efficiency of silane functionalization improves by 35% when low stress silicon nitride surfaces are coated with only 2.1 nm of atomic layer deposited silicon dioxide. This ALD modification technique should be particularly useful for nanomechanical resonant sensors since a thin, conformal film does not drastically reduce quality factor nor does it add excessive mass that would decrease device sensitivity.

  10. Compact and tunable silicon nitride Bragg grating filters in polymer

    NASA Astrophysics Data System (ADS)

    Zhang, Ziyang; Novo, Alejandro Maese; Liu, Dongliang; Keil, Norbert; Grote, Norbert

    2014-06-01

    A series of tunable filters based on silicon nitride waveguide Bragg gratings buried in polymer are studied, fabricated and analyzed. The gratings are etched completely through the waveguides to improve the peak reflectivity at short grating lengths. Reflectivity from 1% to 70% can be reached when the third-order grating length varies from 16 µm to 160 µm. The experimental results are in good agreement with numerical simulations. Due to its compact size and the thermal advantages of polymer, the filter can be tuned very efficiently by a micro heater buried beneath. A tuning range of 34.5 nm is demonstrated at a heat power of only 22 mW.

  11. Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Fox, D. S.

    1994-01-01

    Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

  12. Processing and testing of high toughness silicon nitride ceramics

    NASA Technical Reports Server (NTRS)

    Tikare, Veena; Sanders, William A.; Choi, Sung R.

    1993-01-01

    High toughness silicon nitride ceramics were processed with the addition of small quantities of beta-Si3N4 whiskers in a commercially available alpha-Si3N4 powder. These whiskers grew preferentially during sintering resulting in large, elongated beta-grains, which acted to toughen the matrix by crack deflection and grain pullout. The fracture toughness of these samples seeded with beta-Si3N4 whiskers ranged from 8.7 to 9.5 MPa m(exp 0.5) depending on the sintering additives.

  13. Strength characterization of yttria/alumina-doped sintered silicon nitride

    NASA Technical Reports Server (NTRS)

    Govila, R. K.

    1987-01-01

    The flexural strength of yttria/alumina-doped sintered silicon nitride (Ford Material-RM 20) was measured as a function of temperature (20 to 1400 deg C), applied stress and time. Flexural stress rupture testing at 800 and 1000 deg C indicated that the material can sustain 344 MPa and 276 MPa, respectively, without failure, for a limited time (less than or equal to 100 h). The RM 20 material was susceptible to both oxidation and early stages of creep deformation at temperatures above 1000 deg C and displayed extensive creep deformation and degradation in strength above 1300 deg C.

  14. Interface structure and atomic bonding characteristics in silicon nitride ceramics.

    PubMed

    Ziegler, A; Idrobo, J C; Cinibulk, M K; Kisielowski, C; Browning, N D; Ritchie, R O

    2004-12-01

    Direct atomic resolution images have been obtained that illustrate how a range of rare-earth atoms bond to the interface between the intergranular phase and the matrix grains in an advanced silicon nitride ceramic. It has been found that each rare-earth atom bonds to the interface at a different location, depending on atom size, electronic configuration, and the presence of oxygen at the interface. This is the key factor to understanding the origin of the mechanical properties in these ceramics and will enable precise tailoring in the future to critically improve the materials' performance in wide-ranging applications. PMID:15576617

  15. Synthesis of silicon nitride nanowires by the pyrolysis of perhydropolysilazane.

    PubMed

    Qi, Gong-Jin; Zhang, Chang-Rui; Hu, Hai-Feng

    2006-05-01

    Silicon nitride nanowires synthesized by the pyrolysis of perhydropolysilazane without using any catalysts are reported. After pyrolysis at 1073 K in N2/NH3 atmosphere, the synthetic nanowires are discrete and curly with diameters about tens of nanometers and lengths of hundreds of nanometers. While after post-treatment at 1873 K in N2 atmosphere, the nanowires are continuous and randomly distributed with diameters about tens of nanometers and several microns in length. There are no bulbs or droplets on the tips of the nanowires, and two gas-solid mechanisms are proposed to explain their growth. PMID:16792386

  16. Defects Detection on Silicon Nitride Balls by Laser Ultrasonics

    SciTech Connect

    Lemaire, M.; Ouaftouh, M.; Duquennoy, M.; Jenot, F.; Ourak, M.

    2005-04-09

    In this work, we study the generation and the detection of surface waves on silicon nitride balls a few millimetres in diameter. The excitation of these waves is carried out thanks to a pulsed laser YAG and their detection is achieved with a laser interferometric probe. The whole of the device requires neither coupling nor direct contact with the balls. These waves are then used for the analysis of defects close to the surface of the balls. Several measurements are carried out on samples presenting various defects. Correlation attempts are also carried out between some ultrasonic parameters and some characteristics of defects.

  17. Carbon fibre-reinforced silicon nitride composites by slurry infiltration

    SciTech Connect

    Grenet, C.; Plunkett, L.; Veyret, J.B.; Bullock, E.

    1995-12-01

    The present paper reports on the fabrication of long-carbon fibre reinforced silicon nitride matrix composites by liquid infiltration of an aqueous Si{sub 3}N{sub 4} slurry followed by hot-pressing. A methodology for the maximum volume and uniform infiltration of preforms has been developed by optimising slurry rheology and fibre wetting conditions. Fully infiltrated green forms of 55% theoretical density are achieved with some 40% volume fraction of fibres. The quality of the composites has been assessed by microstructural analysis and mechanical characterization.

  18. Molecular dynamics simulations of nanoidentation of silicon nitride

    SciTech Connect

    Walsh, P.; Omeltchenko, A.; Kikuchi, Hideaki; Kalia, R.K.; Nakano, Aiichiro; Vashishta, P.

    1999-08-01

    This is a report of work in progress on 10 million atom Molecular Dynamics (MD) simulations of nanoindentation of crystalline and amorphous silicon nitride (Si{sub 3}N{sub 4}). Nanoindentation is used to determine mechanical properties of extremely thin films such as hardness and elastic moduli. The authors report load-displacement curves for several Si{sub 3}N{sub 4} configurations using an idealized non-deformable indenter and analyze the local stress distributions in the vicinity of the indenter tip. Preliminary results for surface adhesion using Si{sub 3}N{sub 4} for both tip and substrate are also reported.

  19. Investigation of silicon surface passivation by silicon nitride film deposition

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.

    1984-01-01

    The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.

  20. Tunable removal rates of silicon dioxide, silicon nitride and polysilicon films during chemical mechanical polishing

    NASA Astrophysics Data System (ADS)

    Dandu, Veera P. R.

    Achieving a high Si3N4 removal rate and a relatively low SiO2 removal rate, which is challenging but promising for emerging applications for sub-32 nm node devices, was investigated. This was thought to be impossible as the removal of Si3N4 usually follows a two-step mechanism in which silicon nitride is hydrolyzed first and then removed during CMP. Therefore, additives normally used to suppress the SiO 2 removal rate would tend to suppress the S3N4 removal rate as well. However, it was shown that by using a specific type of a cationic polymer in ceria-based dispersions, a low SiO2 removal rate (<2 nm/min) and relatively high Si3N4 removal rate (˜120 nm/min) can be achieved. These results have been extended to processes involved in MEMS and FinFET fabrication, where a polysilicon layer has to be selectively polished/protected with respect to silicon dioxide and/or silicon nitride layers. Several dispersions were identified which yield tunable removal rates of polysilicon (from <2 nm/min to ˜1 microm/min), silicon dioxide (<2 nm/min to ˜500 nm/min) and silicon nitride (<2 nm/min to ˜120 nm/min) films. This has been made possible by using several additives in ceria and silica based dispersions with and without surface functionalization at different pH values. A fundamental investigation of the interaction of the additive(s) with the abrasives, SiO2 Si3N4, and polysilicon films was also carried out in order to elucidate the removal mechanisms. Zeta potential measurements, UV-Vis Spectroscopy, adsorption isotherms and thermo gravimetric analysis were performed to understand the adsorption behavior of these additives on abrasives and polishing films at different pH values. It was observed that the Ce3+ on the surface of the ceria abrasives is reacting with the silicon dioxide and suboxide on the silicon nitride surfaces during polishing. Also, it appears that electrostatic interactions in conjunction with the reactivity of the active sites on the surface of

  1. Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon rich silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Pirasteh, Parastesh; Charrier, Joël; Dumeige, Yannick; Doualan, Jean-Louis; Camy, Patrice; Debieu, Olivier; Liang, Chuan-hui; Khomenkova, Larysa; Lemaitre, Jonathan; Boucher, Yann G.; Gourbilleau, Fabrice

    2013-07-01

    Planar waveguides made of Nd3+-doped silicon rich silicon oxide (SRSO) and silicon rich silicon nitride (SRSN) have been fabricated by reactive magnetron sputtering and characterized with special emphasis on the comparison of the guided photoluminescence (PL) properties of these two matrices. Guided fluorescence excited by top surface pumping at 488 nm on planar waveguides was measured as a function of the distance between the excitation area and the output of the waveguide, as well as a function of the pump power density. The PL intensity increased linearly with pump power without any saturation even at high power. The linear intensity increase of the Nd3+ guided PL under a non-resonant excitation (488 nm) confirms the efficient coupling between either Si-np and rare-earth ions for SRSO or radiative defects and rare earth ions for SRSN. The guided fluorescences at 945 and 1100 nm were observed until 4 mm and 8 mm of the output of the waveguide for Nd3+ doped SRSO and SRSN waveguides, respectively. The guided fluorescence decays of Nd3+-doped-SRSO and -SRSN planar waveguides have been measured and found equal to 97 μs ±7 and 5 μs ± 2, respectively. These results show notably that the Nd3+-doped silicon rich silicon oxide is a very promising candidate on the way to achieve a laser cavity at 1.06 μm.

  2. Silicon Nitride Windows for Electron Microscopy of Whole Cells

    PubMed Central

    Ring, E. A.; Peckys, D. B.; Dukes, M. J.; Baudoin, J. P.; de Jonge, N.

    2012-01-01

    Summary Silicon microchips with thin electron transparent silicon nitride windows provide a sample support that accommodates both light-, and electron microscopy of whole eukaryotic cells in vacuum or liquid, with minimum sample preparation steps. The windows are robust enough that cellular samples can be cultured directly onto them, with no addition of a supporting film, and no need to embed or section the sample, as is typically required in electron microscopy. By combining two microchips, a microfluidic chamber can be constructed for the imaging of samples in liquid in the electron microscope. We provide microchip design specifications, a fabrication outline, instructions on how to prepare them for biological samples, and examples of images obtained using different light-, and electron microscopy modalities. The use of these microchips is particularly advantageous for correlative light-, and electron microscopy. PMID:21770941

  3. An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer

    PubMed Central

    Chen, Deyong; Wu, Zhengwei; Liu, Lei; Shi, Xiaojing; Wang, Junbo

    2009-01-01

    A resonant microbeam accelerometer of a novel highly symmetric structure based on MEMS bulk-silicon technology is proposed and some numerical modeling results for this scheme are presented. The accelerometer consists of two proof masses, four supporting hinges, two anchors, and a vibrating triple beam, which is clamped at both ends to the two proof masses. LPCVD silicon rich nitride is chosen as the resonant triple beam material, and parameter optimization of the triple-beam structure has been performed. The triple beam is excited and sensed electromagnetically by film electrodes located on the upper surface of the beam. Both simulation and experimental results show that the novel structure increases the scale factor of the resonant accelerometer, and ameliorates other performance issues such as cross axis sensitivity of insensitive input acceleration, etc. PMID:22573956

  4. Mechanical properties measurement of silicon nitride thin films using the bulge test

    NASA Astrophysics Data System (ADS)

    Lee, Hun Kee; Ko, Seong Hyun; Han, Jun Soo; Park, HyunChul

    2007-12-01

    The mechanical properties of silicon nitride films are investigated. Freestanding films of silicon nitride are fabricated using the MEMS technique. The films were deposited onto (100) silicon wafers by LPCVD (Low Pressure Chemical Vapor Deposition). Square and rectangular membranes are made by anisotropic etching of the silicon substrates. Then the bulge test for silicon nitride film was carried out. The thickness of specimens was 0.5, 0.75 and 1μm respectively. By testing both square and rectangular membranes, the reliability and valiant-ness of bulge test with regard to the shape of specimens was investigated. Also considering residual stress in the films, one can evaluate the Young's modulus from experimental load-deflection curves. Young's modulus of the silicon nitride films was about 232GPa. The residual stress is below 100MPa.

  5. Thermal properties of silicon nitride beams below 1 Kelvin.

    SciTech Connect

    Wang, G.; Yefremenko, V.; Novosad, V.; Datesman, A.; Pearson, J.; Shustakova, G.; Divan, R.; Chang, C.; McMahon, J.; Bleem, L.; Crites, A. T.; Downes, T.; Mehl, J.; Meyer, S. S.; Carlstrom, J. E.; Univ. of Chicago

    2010-01-01

    We have investigated the thermal transport of long, narrow beams of silicon nitride at cryogenic temperatures. Simultaneously employing a superconducting Transition Edge Sensor (TES) as both a heater and a sensor, we measured the thermal conductance of 1 {micro}m thick silicon nitride beams of different lateral dimensions. Based upon these measurements, we calculate the thermal parameters of the beams. We utilize a boundary limited phonon scattering model and assume the phonon mean free path to be temperature independent in the calculation. In the temperature range from 300 mK to 530 mK, the following results are obtained for 20 (30) {micro}m beams: the volume heat capacity is 0.083 T+0.509 T{sup 3} J/m{sup 3}-K, the width dependent phonon mean free path is 9.60 (11.05) {micro}m, and the width dependent thermal conductivity is 5.60 x 10{sup -3} T+3.41 x 10{sup -2} T{sup 3} (6.50 x 10{sup -3} T+3.93 x 10{sup -2} T{sup 3}) W/m-K.

  6. Thermal Properties of Silicon Nitride Beams Below 1 Kelvin

    NASA Astrophysics Data System (ADS)

    Wang, G.; Yefremenko, V.; Novosad, V.; Datesman, A.; Pearson, J.; Shustakova, G.; Divan, R.; Chang, C.; McMahon, J.; Bleem, L.; Crites, A. T.; Downes, T.; Mehl, J.; Meyer, S. S.; Carlstrom, J. E.

    2010-04-01

    We have investigated the thermal transport of long, narrow beams of silicon nitride at cryogenic temperatures. Simultaneously employing a superconducting Transition Edge Sensor (TES) as both a heater and a sensor, we measured the thermal conductance of 1 μm thick silicon nitride beams of different lateral dimensions. Based upon these measurements, we calculate the thermal parameters of the beams. We utilize a boundary limited phonon scattering model and assume the phonon mean free path to be temperature independent in the calculation. In the temperature range from 300 mK to 530 mK, the following results are obtained for 20 (30) μm beams: the volume heat capacity is 0.083 T+0.509 T3 J/m3-K, the width dependent phonon mean free path is 9.60 (11.05) μm, and the width dependent thermal conductivity is 5.60×10-3 T+3.41×10-2 T3 (6.50×10-3 T+3.93×10-2 T3) W/m-K.

  7. Advanced optical modelling of dynamically deposited silicon nitride layers

    NASA Astrophysics Data System (ADS)

    Borojevic, N.; Hameiri, Z.; Winderbaum, S.

    2016-07-01

    Dynamic deposition of silicon nitrides using in-line plasma enhanced chemical vapor deposition systems results in non-uniform structure of the dielectric layer. Appropriate analysis of such layers requires the optical characterization to be performed as a function of the layer's depth. This work presents a method to characterize dynamically deposited silicon nitride layers. The method is based on the fitting of experimental spectroscopic ellipsometry data via grading of Tauc-Lorentz optical parameters through the depth of the layer. When compared with the standard Tauc-Lorentz fitting procedure, used in previous studies, the improved method is demonstrating better quality fits to the experimental data and revealing more accurate optical properties of the dielectric layers. The most significant advantage of the method is the ability to extract the depth profile of the optical properties along the direction of the layer normal. This is enabling a better understanding of layers deposited using dynamic plasma enhanced chemical vapor deposition systems frequently used in the photovoltaic industry.

  8. Friction and wear behavior of in-situ reinforced silicon nitride. Final report

    SciTech Connect

    Yust, C.S.

    1995-10-01

    Specimens of in-situ-reinforced silicon nitride (ISRSH) have been wear tested in lubricated, reciprocating, sliding motion against a silicon nitride counterface. Only mild wear of the ISRSN was observed at contact pressures up to 4.8 GPa at an average sliding velocity of 0.3 m/s. At 0.6 m/s, a wear mode transition was observed in ISRSN at 4.2 - 4.4 GPa. In comparison, the wear mode transition in silicon carbide whisker reinforced silicon nitride at both velocities was evident at about 2.2 - 2.4 GPa. Scanning electron microscopy of the ISRSN wear surfaces revealed the presence of a 40 pm thick debris layer on the mild wear tracks. The ISRSN wear mode transition response indicated a potential for an improved wear resistance in this material as compared to whisker reinforced silicon nitride.

  9. Reaction bonded silicon nitride prepared from wet attrition-milled silicon

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.; Glasgow, T. K.; Shaw, N. J.

    1980-01-01

    Silicon powder wet milled in heptane was dried, compacted into test bar shape, helium-sintered, and then reaction bonded in nitrogen-4 vol% hydrogen. As-nitrided bend strengths averaged approximately 290 MPa at both room temperature and 1400 C. Fracture initiation appeared to be associated with subsurface flaws in high-strength specimens and both subsurface and surface flaws in low-strength specimens.

  10. Reaction bonded silicon nitride prepared from wet attrition-milled silicon. [fractography

    NASA Technical Reports Server (NTRS)

    Herball, T. P.; Glasgow, T. K.; Shaw, N. J.

    1980-01-01

    Silicon powder wet milled in heptane was dried, compacted into test bar shape, helium-sintered, and then reaction bonded in nitrogen-4 volume percent hydrogen. As-nitrided bend strengths averaged approximately 290 MPa at both room temperature and 1400 C. Fracture initiation appeared to be associated with subsurface flaws in high strength specimens and both subsurface and surface flaws in low strength specimens.

  11. Role of nitrogen in the downstream etching of silicon nitride

    SciTech Connect

    Blain, M.G.; Meisenheimer, T.L.; Stevens, J.E.

    1996-07-01

    Chemical downstream etching of silicon nitride (Si{sub 3}N{sub 4}) requires the addition of nitrogen to the discharge for obtaining efficient etch rates. A 10{percent} addition of N{sub 2} to a CF{sub 4}/O{sub 2} discharge (CF{sub 4}/O{sub 2} = 1.2, 0.525 Torr) causes a factor of 6 increase in the Si{sub 3}N{sub 4} etch rate and a 8{percent} decrease in the silicon dioxide etch rate. The result is selectivities approaching 9:1. Importantly, the conversion of CF{sub 4} to F and F-containing reactive species by the discharge decreases or remains constant as nitrogen is added to the discharge mix, indicating that the etching reaction is not limited by delivery of these species to the substrate. By measuring the amount of NO and NO{sub 2} in the etch chamber, it is found that the NO concentration increases by a factor of 6 as N{sub 2} is added, while the amount of NO{sub 2} remains small and constant. The NO signal is significantly reduced during nitride etching compared to the signal observed during a discharge with an empty etch chamber, implying that the increase in Si{sub 3}N{sub 4} etch rate is related to the formation of NO in the discharge. This view is consistent with the observation that an NF{sub 3} plasma in a quartz discharge tube results in a nitride etch rate which is a factor of 2 higher than for the same discharge in a sapphire tube. The conclusion is that the oxygen liberated by erosion of the quartz tube allows the formation of NO. That NO is a key Si{sub 3}N{sub 4} etch reactant was confirmed by performing a series of experiments in which N{sub 2}, NO, NO{sub 2}, and N{sub 2}O were injected into the discharge and then downstream in the reaction chamber during a CF{sub 4}/O{sub 2} discharge. Nitride etch rates increased significantly upon injection of NO into both discharge and etch chamber as compared to injection of the other N{sub {ital x}}O{sub {ital y}} species. {copyright} {ital 1996 American Vacuum Society}

  12. Optimization of sinter/HIP parameters of multiphase silicon nitride/silicon carbide ceramics

    SciTech Connect

    Perera, D.S.; Moricca, S.; Drennan, J.; Fan, Q.S.; Gu, P.Z.

    1996-12-31

    Multiphase silicon carbide reinforced silicon nitride materials were sintered using 3 techniques, (1) pressureless sintering, (2) post-sinter HIPing and (3) sintering and HIPing in the same cycle (sinter/HIP). The materials have been characterized with respect to their microstructure, phase relationships and mechanical properties. The materials reached almost the theoretical density using the 3 sintering methods, but this was achieved at a lower temperature with sinter/HIPing. A balance should be sought between the high pressure required for high density and the prevention of excessive nitrogen (pressurizing gas) dissolution in the glassy grain boundary phases. The optimization of sinter/HIP parameters are discussed with respect to sintering mechanisms.

  13. Coaxial nanocable: silicon carbide and silicon oxide sheathed with boron nitride and carbon

    PubMed

    Zhang; Suenaga; Colliex; Iijima

    1998-08-14

    Multielement nanotubes comprising multiple phases, with diameters of a few tens of nanometers and lengths up to 50 micrometers, were successfully synthesized by means of reactive laser ablation. The experimentally determined structure consists of a beta-phase silicon carbide core, an amorphous silicon oxide intermediate layer, and graphitic outer shells made of boron nitride and carbon layers separated in the radial direction. The structure resembles a coaxial nanocable with a semiconductor-insulator-metal (or semiconductor-insulator-semiconductor) geometry and suggests applications in nanoscale electronic devices that take advantage of this self-organization mechanism for multielement nanotube formation. PMID:9703508

  14. Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitrides

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Choi, Sung R.; Sanders, William A.; Fox, Dennis S.

    1991-01-01

    The mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.

  15. Crystallization of the glassy grain boundary phase in silicon nitride ceramics

    NASA Technical Reports Server (NTRS)

    Drummond, Charles H., III

    1991-01-01

    The role was studied of the intergranular glassy phase in silicon nitride as-processed with yttria as a sintering aid. The microstructure, crystallization, and viscosity of the glassy phase were areas studied. Crystallization of the intergranular glassy phase to more refractory crystalline phases should improve the high temperature mechanical properties of the silicon nitride. The addition of a nucleating agent will increase the rate of crystallization. The measurement of the viscosity of the glassy phase will permit the estimation of the high temperature deformation of the silicon nitride.

  16. Infiltration of reaction-bonded silicon nitride with equilibrium Y-Si-O-N melt

    SciTech Connect

    Sheu, T.S. . Dept. of Biologic and Materials Science)

    1994-02-01

    An equilibrium Y-Si-O-N melt was infiltrated to eliminate the open porosity of reaction-bonded silicon nitride at 1600--1800 C. This oxynitride melt contained two equilibrium phases, a [beta]-Si[sub 3]N[sub 4] solid phase and a liquid phase at high temperatures. Before infiltration, porous reaction-bonded silicon nitride compacts were heat-treated to completely transform to the [beta]-Si[sub 3]N[sub 4] phase. After infiltration, the flexural strength of the reaction-bonded silicon nitride material increased from 200 to 600 MPa at 25 C, from 200 to 300 MPa at 1400 C in air.

  17. Scale-up of the nitridation and sintering of silicon preforms using microwave heating

    SciTech Connect

    Kiggans, J.O. Jr.; Tiegs, T.N.; Davisson, C.C.; Morrow, M.S.; Garvey, G.J.

    1996-05-01

    Scale-up studies were performed in which microwave heating was used to fabricate reaction-bonded silicon nitride and sintered reaction-bonded silicon nitride (SRBSN). Tests were performed in both a 2.45 GHz, 500 liter and a 2.45 GHz, 4,000 liter multimode cavities. A variety of sizes, shapes, and compositions of silicon preforms were processed in the studies, including bucket tappets and clevis pins for diesel engines. Up to 230 samples were processed in a single microwave furnace run. Data were collected which included weight gains for nitridation experiments, and final densities for nitridation and sintering experiments. For comparison, nitridation and sintering studies were performed using a conventional resistance-heated furnace.

  18. Improved performance of silicon nitride-based high temperature ceramics

    NASA Technical Reports Server (NTRS)

    Ashbrook, R. L.

    1977-01-01

    Recent progress in the production of Si3N4 based ceramics is reviewed: (1) high temperature strength and toughness of hot pressed Si3N4 were improved by using high purity powder and a stabilized ZrO2 additive, (2) impact resistance of hot pressed Si3N4 was increased by the use of a crushable energy absorbing layer, (3) the oxidation resistance and strength of reaction sintered Si3N4 were increased by impregnating reaction sintered silicon nitride with solutions that oxidize to Al2O3 or ZrO2, (4) beta prime SiA1ON compositions and sintering aids were developed for improved oxidation resistance or improved high temperature strength.

  19. Single-layer graphene on silicon nitride micromembrane resonators

    SciTech Connect

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja; Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S.; Taylor, Jacob M.; Marcus, Charles M.; Cheol Shin, Yong; Kong, Jing

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  20. Distribution patterns of different carbon nanostructures in silicon nitride composites.

    PubMed

    Tapasztó, Orsolya; Markó, Márton; Balázsi, Csaba

    2012-11-01

    The dispersion properties of single- and multi-walled carbon nanotubes as well as mechanically exfoliated few layer graphene flakes within the silicon nitride ceramic matrix have been investigated. Small angle neutron scattering experiments have been employed to gain information on the dispersion of the nano-scale carbon fillers throughout the entire volume of the samples. The neutron scattering data combined with scanning electron microscopy revealed strikingly different distribution patterns for different types of carbon nanostructures. The scattering intensities for single wall carbon nanotubes (SWCNTs) reveal a decay exponent characteristic to surface fractals, which indicate that the predominant part of nanotubes can be found in loose networks wrapping the grains of the polycrystalline matrix. By contrast, multi wall carbon nanotubes (MWCNTs) were found to be present mainly in the form of bulk aggregate structures, while few-layer graphene (FLG) flakes have been individually dispersed within the host matrix, under the very same preparation and processing conditions. PMID:23421284

  1. Dense and homogenous silicon nitride composites containing carbon nanotubes.

    PubMed

    Osendi, M I; Gautheron, F; Miranzo, P; Belmonte, M

    2009-10-01

    Silicon nitride (Si3N4) materials with 1.8 and 5.3 vol.% of multi-walled carbon nanotubes (MWCNTs) were densified using 7 wt% of sintering additives (Y2O3 +Al2O3). The mixing and sintering procedures produced quite homogenous and dense MWCNT/Si3N4 composites. The nanotubes condition was followed by micro-Raman spectroscopy and no alteration was observed in spite of the relatively high sintering temperatures (approximately 1600 degrees C). Mechanical parameters (hardness, elastic modulus and fracture toughness) of the composites and comparative blank specimens were measured by instrumented indentation and discussed in parallel. Thermal conductivity was also estimated for these specimens. The nanotube orientation effect inherent to pressure assisted sintering methods and the weak interfacial bond between nanotubes and Si3N4 are important factors to explain the mechanical and thermal behaviours of these composites. PMID:19908514

  2. Microstructure and abrasive wear in silicon nitride ceramics

    SciTech Connect

    Dogan, Cynthia P.; Hawk, Jeffrey A.

    2001-10-01

    It is well known that abrasive wear resistance is not strictly a materials property, but also depends upon the specific conditions of the wear environment. Nonetheless, characteristics of the ceramic microstructure do influence its hardness and fracture toughness and must, therefore, play an active role in determining howa ceramic will respond to the specific stress states imposed upon it by the wear environment. In this study, the ways in which composition and microstructure influence the abrasive wear behavior of six commercially-produced silicon nitride based ceramics are examined. Results indicate that microstructural parameters, such as matrix grain size and orientation, porosity, and grain boundary microstructure, and thermal expansion mismatch stresses created as the result of second phase formation, influence the wear rate through their effect on wear sheet formation and subsurface fracture. It is also noted that the potential impact of these variables on the wear rate may not be reflected in conventional fracture toughness measurements.

  3. Optical manipulation of microparticles and cells on silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Gaugiran, S.; Gétin, S.; Fedeli, J. M.; Colas, G.; Fuchs, A.; Chatelain, F.; Dérouard, J.

    2005-09-01

    We demonstrate the optical manipulation of cells and dielectric particles on the surface of silicon nitride waveguides. Glass particles with 2μm diameter are propelled at velocities of 15μm/s with a guided power of 20mW. This is approximately 20 times more efficient than previously reported, and permits to use this device on low refractive index objects such as cells. Red blood cells and yeast cells can be trapped on the waveguide and pushed along it by the action of optical forces. This kind of system can easily be combined with various integrated optical structures and opens the way to the development of new microsystems for cell sorting applications.

  4. Evaluation of Silicon Nitride for Brayton Turbine Wheel Application

    NASA Technical Reports Server (NTRS)

    Freedman, Marc R.

    2008-01-01

    Silicon nitride (Si3N4) is being evaluated as a risk-reduction alternative for a Jupiter Icy Moons Orbiter Brayton turbine wheel in the event that the Prometheus program design requirements exceed the creep strength of the baseline metallic superalloys. Five Si3N4 ceramics, each processed by a different method, were screened based on the Weibull distribution of bend strength at 1700 F (927 C). Three of the Si3N4 ceramics, Honeywell AS800, Kyocera SN282, and Saint-Gobain NT154, had bend strengths in excess of 87 ksi (600 MPa) at 1700 F (927 C). These were chosen for further assessment and consideration for future subcomponent and component fabrication and testing.

  5. Supersonic jet epitaxy of aluminum nitride on silicon (100)

    NASA Astrophysics Data System (ADS)

    Brown, Kyle A.; Ustin, S. A.; Lauhon, L.; Ho, W.

    1996-05-01

    Single phase aluminum nitride (0001) has been grown on atomically clean silicon (100) substrates (720 °C≥Ts≥620 °C) with dual supersonic molecular beam gas sources. The precursors used were triethylaluminum [TEA; Al(C2H5)3] and ammonia (NH3). The maximum growth rate obtained was 0.1 μm/h. The growth rate was found to depend strongly on the kinetic energy of the incident precursors. Single phase films were grown 200-400 nm thick. Structural x-ray studies reveal 2θ full widths at half-maxima between 0.20° and 0.35° for the AlN (0002) peak.

  6. Mechanical properties of sputtered silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Vila, M.; Cáceres, D.; Prieto, C.

    2003-12-01

    Silicon nitride thin films were prepared by reactive sputtering from different sputtering targets and using a range of Ar/N2 sputtering gas mixtures. The hardness and the Young's modulus of the samples were determined by nanoindentation measurements. Depending on the preparation parameters, the obtained values were in the ranges 8-23 and 100-210 GPa, respectively. Additionally, Fourier-transform infrared spectroscopy, Rutherford backscattering spectroscopy, and x-ray diffraction were used to characterize samples with respect to different types of bonding, atomic concentrations, and structure of the films to explain the variation of mechanical properties. The hardness and Young's modulus were determined as a function of film composition and structure and conditions giving the hardest film were found. Additionally, a model that assumes a series coupling of the elastic components, corresponding to the Si-O and Si-N bonds present in the sample has been proposed to explain the observed variations of hardness and Young's modulus.

  7. Conductivity of materials made of aluminum nitride and silicon nitride mixtures

    NASA Technical Reports Server (NTRS)

    Gorbatov, A. G.; Kamyshov, V. M.

    1978-01-01

    To establish the possible mechanism for conductivity in aluminum nitride a study was made of the electric conductivity of pure AlN and its mixtures with silicon nitride at different temperatures and partial pressures of nitrogen in the gas phase. The thermoelectromotive force was also measured. The experiments used polycrystalline samples of cylindrical shape 18 mm in diameter made of powders by hot pressing in graphite press molds at a temperature of 1973-2273 K and pressure 1,470,000 n/sqm. The items obtained by this method had porosity not over 5%. After pressing, the samples were machined to remove carbon from the surface, and were annealed in a stream of dry ammonia for 10 h at a temperature of 1273-1373 K. Electric conductivity was measured according to the bridge scheme on an alternating current of frequency 10 kHz. In order to guarantee close contact of the platinum electrodes with the surface of the samples, a thin layer of platinum was sprayed on them. Experiments were conducted in the temperature interval 1273-1573 K with a half hour delay at each assigned temperature with heating and cooling.

  8. Resistance of Silicon Nitride Turbine Components to Erosion and Hot Corrosion/oxidation Attack

    NASA Technical Reports Server (NTRS)

    Strangmen, Thomas E.; Fox, Dennis S.

    1994-01-01

    Silicon nitride turbine components are under intensive development by AlliedSignal to enable a new generation of higher power density auxiliary power systems. In order to be viable in the intended applications, silicon nitride turbine airfoils must be designed for survival in aggressive oxidizing combustion gas environments. Erosive and corrosive damage to ceramic airfoils from ingested sand and sea salt must be avoided. Recent engine test experience demonstrated that NT154 silicon nitride turbine vanes have exceptional resistance to sand erosion, relative to superalloys used in production engines. Similarly, NT154 silicon nitride has excellent resistance to oxidation in the temperature range of interest - up to 1400 C. Hot corrosion attack of superalloy gas turbine components is well documented. While hot corrosion from ingested sea salt will attack silicon nitride substantially less than the superalloys being replaced in initial engine applications, this degradation has the potential to limit component lives in advanced engine applications. Hot corrosion adversely affects the strength of silicon nitride in the 850 to 1300 C range. Since unacceptable reductions in strength must be rapidly identified and avoided, AlliedSignal and the NASA Lewis Research Center have pioneered the development of an environmental life prediction model for silicon nitride turbine components. Strength retention in flexure specimens following 1 to 3300 hour exposures to high temperature oxidation and hot corrosion has been measured and used to calibrate the life prediction model. Predicted component life is dependent upon engine design (stress, temperature, pressure, fuel/air ratio, gas velocity, and inlet air filtration), mission usage (fuel sulfur content, location (salt in air), and times at duty cycle power points), and material parameters. Preliminary analyses indicate that the hot corrosion resistance of NT154 silicon nitride is adequate for AlliedSignal's initial engine

  9. Studies on the scale-up of the microwave-assisted nitridation and sintering of reaction-bonded silicon nitride

    SciTech Connect

    Kiggans, J.O.: Tiegs, T.N.; Kimrey, H.D.

    1996-05-01

    Studies using laboratory test samples have shown that microwave heating produces sintered reaction-bonded silicon nitride materials with improved properties. The final challenge for processing this material by microwave heating is the development of a technology for processing larger batch-size quantities of these materials. Initial microwave scale-up experiments were performed using powder compacts of a bucket tappet geometry. In experiments using microwave-transparent boron nitride sample crucibles, temperature gradients within some crucibles led to larger variations in the sample densities than were obtained with the conventionally processed samples. The use of a microwave-suscepter type crucible made of silicon carbide and boron nitride resulted in an improved temperature uniformity and in density variations comparable to those obtained for the control groups.

  10. High temperature mechanical performance of a hot isostatically pressed silicon nitride

    SciTech Connect

    Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J.

    1996-01-01

    Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

  11. Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

    DOEpatents

    Becher, Paul F.; Lin, Hua-Tay

    2011-06-28

    A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

  12. Thermal Residual Stress in Environmental Barrier Coated Silicon Nitride - Modeled

    NASA Technical Reports Server (NTRS)

    Ali, Abdul-Aziz; Bhatt, Ramakrishna T.

    2009-01-01

    When exposed to combustion environments containing moisture both un-reinforced and fiber reinforced silicon based ceramic materials tend to undergo surface recession. To avoid surface recession environmental barrier coating systems are required. However, due to differences in the elastic and thermal properties of the substrate and the environmental barrier coating, thermal residual stresses can be generated in the coated substrate. Depending on their magnitude and nature thermal residual stresses can have significant influence on the strength and fracture behavior of coated substrates. To determine the maximum residual stresses developed during deposition of the coatings, a finite element model (FEM) was developed. Using this model, the thermal residual stresses were predicted in silicon nitride substrates coated with three environmental coating systems namely barium strontium aluminum silicate (BSAS), rare earth mono silicate (REMS) and earth mono di-silicate (REDS). A parametric study was also conducted to determine the influence of coating layer thickness and material parameters on thermal residual stress. Results indicate that z-direction stresses in all three systems are small and negligible, but maximum in-plane stresses can be significant depending on the composition of the constituent layer and the distance from the substrate. The BSAS and REDS systems show much lower thermal residual stresses than REMS system. Parametric analysis indicates that in each system, the thermal residual stresses can be decreased with decreasing the modulus and thickness of the coating.

  13. Ultra efficient silicon nitride grating coupler with bottom grating reflector.

    PubMed

    Zou, Jinghui; Yu, Yu; Ye, Mengyuan; Liu, Lei; Deng, Shupeng; Zhang, Xinliang

    2015-10-01

    We theoretically propose a silicon nitride (Si(3)N(4)) grating coupler (GC) with both ultrahigh efficiency and simplified fabrication processes. Instead of using a bottom distributed Bragg reflector (DBR) or metal reflector, a bottom Si grating reflector (GR) with comparable reflectivity is utilized to improve the coupling efficiency. The fully etched Si GR is designed based on an industrially standard silicon-on-insulator (SOI) wafer with 220 nm top Si layer. By properly adjusting the trench width and period length of the Si GR, a high reflectivity over 90% is obtained. The Si(3)N(4) GC is optimized based on a common 400 nm Si(3)N(4) layer sitting on the Si GR with a SiO(2) separation layer. With an appropriate distance between the Si(3)N(4) GC and bottom Si GR, a low coupling loss of -1.47 dB is theoretically obtained using uniform GC structure. A further record ultralow loss of -0.88 dB is predicted by apodizing the Si(3)N(4) GC. The specific fabrication processes and tolerance are also investigated. Compared with DBR, the bottom Si GR can be easily fabricated by single step of patterning and etching, simplifying the fabrication processes. PMID:26480144

  14. Fabrication of porous silicon nitride ceramics using binder jetting technology

    NASA Astrophysics Data System (ADS)

    Rabinskiy, L.; Ripetsky, A.; Sitnikov, S.; Solyaev, Y.; Kahramanov, R.

    2016-07-01

    This paper presents the results of the binder jetting technology application for the processing of the Si3N4-based ceramics. The difference of the developed technology from analogues used for additive manufacturing of silicon nitride ceramics is a method of the separate deposition of the mineral powder and binder without direct injection of suspensions/slurries. It is assumed that such approach allows reducing the technology complexity and simplifying the process of the feedstock preparation, including the simplification of the composite materials production. The binders based on methyl ester of acrylic acid with polyurethane and modified starch were studied. At this stage of the investigations, the technology of green body's fabrication is implemented using a standard HP cartridge mounted on the robotic arm. For the coordinated operation of the cartridge and robot the specially developed software was used. Obtained green bodies of silicon powder were used to produce the ceramic samples via reaction sintering. The results of study of ceramics samples microstructure and composition are presented. Sintered ceramics are characterized by fibrous α-Si3N4 structure and porosity up to 70%.

  15. Synthesis of fine-grained .alpha.-silicon nitride by a combustion process

    DOEpatents

    Holt, J. Birch; Kingman, Donald D.; Bianchini, Gregory M.

    1990-01-01

    A combustion synthesis process for the preparation of .alpha.-silicon nitride and composites thereof is disclosed. Preparation of the .alpha.-silicon nitride comprises the steps of dry mixing silicon powder with an alkali metal azide, such as sodium azide, cold-pressing the mixture into any desired shape, or loading the mixture into a fused, quartz crucible, loading the crucible into a combustion chamber, pressurizing the chamber with nitrogen and igniting the mixture using an igniter pellet. The method for the preparation of the composites comprises dry mixing silicon powder (Si) or SiO.sub.2, with a metal or metal oxide, adding a small amount of an alkali metal azide such as sodium azide, introducing the mixture into a suitable combustion chamber, pressurizing the combustion chamber with nitrogen, igniting the mixture within the combustion chamber, and isolating the .alpha.-silicon nitride formed as a reaction product.

  16. Microwave Nitridation of Sintered Reaction Bonded Silicon Parts for Natural Gas Fueled Diesel Engines

    SciTech Connect

    Edler, J.; Kiggans, J.O.; Suman, A.W.; Tiegs, T.N.

    1999-01-01

    This cooperative project was a joint development program between Eaton Corporation and Lockheed Martin Energy Research (LMER). Cooperative work was of benefit to both parties. ORNL was able to assess up-scale of the microwave nitridation process using a more intricate-shaped part designed for application in advanced diesel engines. Eaton Corporation mined access to microwave facilities and expertise for the nitridation of SRBSN materials. The broad objective of the CRADA established with Eaton Corporation and ORNL was to develop cost-effective silicon nitride ceramics compared to the current materials available. The following conclusions can be made from the work performed under the CRADA: (1) Demonstrated that the binder burnout step can be incorporated into the SRBSN processing in the microwave furnace. (2) Scale-up of the microwave nitridation process using Eaton Corporation parts showed that the nitridation weight gains were essentially identical to those obtained by conventional heating. (3) Combined nitridation and sintering processes using silicon nitride beads as packing powders results in degradation of the mechanical properties. (4) Gelcasting of silicon nitride materials using Eaton Si mixtures was demonstrated.

  17. Graphene metallization of high-stress silicon nitride resonators for electrical integration.

    PubMed

    Lee, Sunwoo; Adiga, Vivekananda P; Barton, Robert A; van der Zande, Arend M; Lee, Gwan-Hyoung; Ilic, B Rob; Gondarenko, Alexander; Parpia, Jeevak M; Craighead, Harold G; Hone, James

    2013-09-11

    High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing, signal processing, and optomechanics. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30% on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electrostatic tuning of the frequency by up to 0.3% per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride. PMID:23905749

  18. Bend strengths of reaction bonded silicon nitride prepared from dry attrition milled silicon powder

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.; Glasgow, T. K.

    1979-01-01

    Dry attrition milled silicon powder was compacted, sintered in helium, and reaction bonded in nitrogen-4 volume percent hydrogen. Bend strengths of bars with as-nitrided surfaces averaged as high as 210 MPa at room temperature and 220 MPa at 1400 C. Bars prepared from the milled powder were stronger than those prepared from as-received powder at both room temperature and at 1400 C. Room temperature strength decreased with increased milling time and 1400 C strength increased with increased milling time.

  19. Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer

    NASA Astrophysics Data System (ADS)

    babu, G. Anandha; Takahashi, Isao; Matsushima, Satoru; Usami, Noritaka

    2016-05-01

    We propose to utilize single layer silicon beads (SLSB) coated with silicon nitride as cost-effective seed layer to grow high-quality multicrystalline silicon (mc-Si) ingot. The texture structure of silicon nitride provides a large number of nucleation sites for the fine grain formation at the bottom of the crucible. No special care is needed to prevent seed melting, which would lead to decrease of red zone owing to decrease of feedstock melting time. As we expected, mc-Si ingot seeded with SLSB was found to consist of small, different grain orientations, more uniform grain distribution, high percentage of random grain boundaries, less twin boundaries, and low density of dislocation clusters compared with conventional mc-Si ingot grown under identical growth conditions. These results show that the SLSB seeded mc-Si ingot has enhanced ingot quality. The correlation between grain boundary structure and defect structure as well as the reason responsible for dislocation clusters reduction in SLSB seeded mc-Si wafer are also discussed.

  20. Large-scale characterization of silicon nitride-based evanescent couplers at 532nm wavelength

    NASA Astrophysics Data System (ADS)

    Claes, Tom; Jansen, Roelof; Neutens, Pieter; Du Bois, Bert; Helin, Philippe; Severi, Simone; Van Dorpe, Pol; Deshpande, Paru; Rottenberg, Xavier

    2014-05-01

    Recently, the photonics community has a renewed attention for silicon nitride.1-3 When deposited at temperatures below 650K with plasma-enhanced chemical vapor deposition (PECVD),4 it enables photonic circuits fabricated on-top of standard complementary metaloxidesemiconductor (CMOS) electronics. Silicon nitride is moreover transparent to wavelengths that are visible to the human eye and detectable with available silicon detectors, thus offering a photonics platform for a range of applications that is not accessible with the popular silicon-on-insulator platform. However, first-time-right design of large-scale circuits for demanding specifications requires reliable models of the basic photonic building blocks, like evanescent couplers (Figure 1), components that couple power between multiple waveguides. While these models typically exist for the silicon-on-insulator platform, they still lack maturity for the emerging silicon nitride platform. Therefore, we meticulously studied silicon nitride-based evanescent couplers fabricated in our 200mm-wafer facility. We produced the structures in a silicon nitride film deposited with low-temperature PECVD, and patterned it using optical lithography at a wavelength of 193nm and reactive ion etching. We measured the performance of as much as 250 different designs at 532nm wavelength, a central wavelength in the visible range for which laser sources are widespread. For each design, we measured the progressive transmission of up-to 10 cascaded identical couplers (Figure 2(a)), yielding very accurate figures for the coupling factor (Figure 2(b)). This paper presents the trends extracted from this vast data set (Figure 3), and elaborates on the impact of the couplers bend radius and gap on its coupling factors (Figure 4 and Figure 5). We think that the large- scale characterization of evanescent couplers presented in this paper, in excellent agreement with the simulated performance of the devices, forms the basis for a component

  1. Multisite silicon neural probes with integrated silicon nitride waveguides and gratings for optogenetic applications

    NASA Astrophysics Data System (ADS)

    Shim, Euijae; Chen, Yu; Masmanidis, Sotiris; Li, Mo

    2016-03-01

    Optimal optogenetic perturbation of brain circuit activity often requires light delivery in a precise spatial pattern that cannot be achieved with conventional optical fibers. We demonstrate an implantable silicon-based probe with a compact light delivery system, consisting of silicon nitride waveguides and grating couplers for out-of-plane light emission with high spatial resolution. 473 nm light is coupled into and guided in cm-long waveguide and emitted at the output grating coupler. Using the direct cut-back and out-scattering measurement techniques, the propagation optical loss of the waveguide is measured to be below 3 dB/cm. The grating couplers provide collimated light emission with sufficient irradiance for neural stimulation. Finally, a probe with multisite light delivery with three output grating emitters from a single laser input is demonstrated.

  2. Generation of cavities in silicon wafers by laser ablation using silicon nitride as sacrificial layer

    NASA Astrophysics Data System (ADS)

    Lerner, B.; Perez, M. S.; Toro, C.; Lasorsa, C.; Rinaldi, C. A.; Boselli, A.; Lamagna, A.

    2012-01-01

    Throughout this investigation, experiments on laser ablation with silicon (Si) wafers have been performed using silicon nitride (Si3N4) as a sacrificial layer to find the optimal fluence capable of removing the Si3N4, which allows the subsequent anisotropic etching in Si with potassium hydroxide. As a result, an alternative to the traditional micromachining techniques that require more steps and processing times has been introduced. The effect of the pulse numbers on Si wafers has been studied and it has been observed that when increasing the pulse numbers at the same fluence, the capacity of the pyramidal cavity formed was greater than using only one pulse at higher fluences. Microcavities were performed with a floating Si3N4 layer. This happens to be very useful for the development of drug delivery systems and the manufacture of microarrays. Microcavities were also used as masters for the fabrication of microionizers in polydimethyl siloxane (PDMS).

  3. Preparation of silicon carbide-silicon nitride fibers by the pyrolysis of polycarbosilazane precursors

    NASA Technical Reports Server (NTRS)

    Penn, B. G.; Daniels, J. G.; Ledbetter, F. E., III; Clemons, J. M.

    1985-01-01

    The development of silicon carbide-silicon nitride fibers (SiC-Si3N4) by the pyrolysis of polycarbosilazane precursors is reviewed. Precursor resin, which was prepared by heating tris(N-methylamino)methylsilane or tris(N-methylamino)phenylsilane to about 520 C, was drawn into fibers from the melt and then made unmeltable by humidity conditioning at 100 C and 95 percent relative humidity. The humidity treated precursor fibers were pyrolyzed to ceramic fibers with good mechanical properties and electrical resistivity. For example, SiC-Si3N4 fibers derived from tris(N-methylamino)methylsilane had a tensile rupture modulus of 29 million psi and electrical resistivity of 6.9 x ten to the 8th power omega-cm, which is ten to the twelfth power times greater than that obtained for graphite fibers.

  4. Multisite silicon neural probes with integrated silicon nitride waveguides and gratings for optogenetic applications

    PubMed Central

    Shim, Euijae; Chen, Yu; Masmanidis, Sotiris; Li, Mo

    2016-01-01

    Optimal optogenetic perturbation of brain circuit activity often requires light delivery in a precise spatial pattern that cannot be achieved with conventional optical fibers. We demonstrate an implantable silicon-based probe with a compact light delivery system, consisting of silicon nitride waveguides and grating couplers for out-of-plane light emission with high spatial resolution. 473 nm light is coupled into and guided in cm-long waveguide and emitted at the output grating coupler. Using the direct cut-back and out-scattering measurement techniques, the propagation optical loss of the waveguide is measured to be below 3 dB/cm. The grating couplers provide collimated light emission with sufficient irradiance for neural stimulation. Finally, a probe with multisite light delivery with three output grating emitters from a single laser input is demonstrated. PMID:26941111

  5. Preparation of silicon carbide-silicon nitride fibers by the pyrolysis of polycarbosilazane precursors - A review

    NASA Technical Reports Server (NTRS)

    Penn, B. G.; Daniels, J. G.; Ledbetter, F. E., III; Clemons, J. M.

    1986-01-01

    The development of silicon carbide-silicon nitride fibers (SiC-Si3N4) by the pyrolysis of polycarbosilazane precursors is reviewed. Precursor resin, which was prepared by heating tris(N-methylamino)methylsilane or tris(N-methylamino)phenylsilane to about 520 C, was drawn into fibers from the melt and then made unmeltable by humidity conditioning at 100 C and 95 percent relative humidity. The humidity treated precursor fibers were pyrolyzed to ceramic fibers with good mechanical properties and electrical resistivity. For example, SiC-Si3N4 fibers derived from tris(N-methylamino)methylsilane had a tensile rupture modulus of 29 million psi and electrical resistivity of 6.9 x ten to the 8th power omega-cm, which is ten to the twelfth power times greater than that obtained for graphite fibers.

  6. Multisite silicon neural probes with integrated silicon nitride waveguides and gratings for optogenetic applications.

    PubMed

    Shim, Euijae; Chen, Yu; Masmanidis, Sotiris; Li, Mo

    2016-01-01

    Optimal optogenetic perturbation of brain circuit activity often requires light delivery in a precise spatial pattern that cannot be achieved with conventional optical fibers. We demonstrate an implantable silicon-based probe with a compact light delivery system, consisting of silicon nitride waveguides and grating couplers for out-of-plane light emission with high spatial resolution. 473 nm light is coupled into and guided in cm-long waveguide and emitted at the output grating coupler. Using the direct cut-back and out-scattering measurement techniques, the propagation optical loss of the waveguide is measured to be below 3 dB/cm. The grating couplers provide collimated light emission with sufficient irradiance for neural stimulation. Finally, a probe with multisite light delivery with three output grating emitters from a single laser input is demonstrated. PMID:26941111

  7. High gas velocity burner tests on silicon carbide and silicon nitride at 1200 C

    NASA Technical Reports Server (NTRS)

    Sanders, W. A.; Probst, H. B.

    1973-01-01

    Specimens of silicon carbide and silicon nitride were exposed to a Mach one gas velocity burner simulating a turbine engine environment. Cyclic tests up to 100 hour duration were conducted at specimen temperatures of 1200 C. A specimen geometry was used that develops thermal stresses during thermal cycling in a manner similar to blades and vanes of a gas turbine engine. Materials were compared on a basis of weight change, dimensional reductions, metallography, fluorescent penetrant inspection, X-ray diffraction analyses, failure mode, and general appearance. One hot pressed SiC, one reaction sintered SiC, and three hot pressed Si3N4 specimens survived the program goal of 100 one-hour cycle exposures. Of the materials that failed to meet the program goal, thermal fatigue was identified as the exclusive failure mode.

  8. High-temperature corrosion of material based on silicon nitride and exposed to salts

    SciTech Connect

    Gogotski, Y.G.; Frantsevich, I.N.; Lavrenko, V.A.

    1985-05-01

    Materials based on silicon nitride or carbide have shown promise for use in manufacturing gas-turbine and diesel engine parts. This paper presents an investigation of the corrosion of a reaction-sintered material based on silicon nitride with the addition of 30% silicon carbide and 2% magnesium oxide, when exposed to melts of sodium chloride, sodium sulfide, or sea salt. The studies show that the material corrodes very little in sea salt or sodium chloride melts, but it is destroyed rapidly in a sodium sulfate melt.

  9. Characterization of silicon nitride particles synthesized in an atmospheric-pressure convection-stabilized arc

    SciTech Connect

    Chang, Yl; Kong, P.; Pfender, E. )

    1989-03-01

    Silicon nitride powders were synthesized in an atmospheric-pressure convection-stabilized arc using silicon and ammonia as reactants. The morphology and particle size distributions of the silicon nitride particles were characterized by SEM, TEM, and electron diffraction analyses. The silicon nitride particles collected in the plasma reactor were formed by either gas-condensed phase reactions or chemical vapor reactions. The morphologies of the particles formed by gas-condensed phase reactions consisted of {beta}-Si{sub 3}N{sub 4} prisms, {alpha}-Si{sub 3}N{sub 4} matte, {alpha}-Si{sub 3}N{sub 4} needles, and spaghetti-like whiskers. For the homogeneously nucleated particles, the morphologies included dendrites, needles, platelets, and amorphous particles. Most of the particles formed were aggregates with particle size distributions ranging from 500 to 1,500 {angstrom} depending on the location of injection of the reactants.

  10. RF sputtered silicon and hafnium nitrides as applied to 440C steel

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1984-01-01

    Silicon nitride and hafnium nitride coatings were deposited on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. The coatings and the interface between the coating and substrate were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. Oxide was found at all interfaces with an interface width of at least 600 A for the oxidized substrates and at least 300 A for the unoxidized substrates. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C. Coatings of both nitrides deposited at 8 mtorr were found to have increased adhesion to both oxidized and unoxidized 440C over those deposited at 20 mtorr.

  11. Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries

    NASA Astrophysics Data System (ADS)

    Penta, Naresh K.; Amanapu, H. P.; Peethala, B. C.; Babu, S. V.

    2013-10-01

    Four different anionic surfactants, sodium dodecyl sulfate, dodecyl benzene sulfonic acid (DBSA), dodecyl phosphate and Sodium lauroyl sarcosine, selected from the sulfate, phosphate, and carboxylic family, were investigated as additives in silica dispersions for selective polishing of silicon dioxide over silicon nitride films. We found that all these anionic surfactants suppress the nitride removal rates (RR) for pH ≤4 while more or less maintaining the oxide RRs, resulting in high oxide-to-nitride RR selectivity. The RR data obtained as a function of pH were explained based on pH dependent distributions of surfactant species, change in the zeta potentials of oxide and nitride surfaces, and thermogravimetric data. It appears that the negatively charged surfactant species preferentially adsorb on the positively charged nitride surface below IEP through its electrostatic interactions and form a bilayer adsorption, resulting in the suppression of nitride RRs. In contrast to the surfactants, K2SO4 interacts only weakly with the nitride surface and hence cannot suppress its RR.

  12. Ag doped silicon nitride nanocomposites for embedded plasmonics

    NASA Astrophysics Data System (ADS)

    Bayle, M.; Bonafos, C.; Benzo, P.; Benassayag, G.; Pécassou, B.; Khomenkova, L.; Gourbilleau, F.; Carles, R.

    2015-09-01

    The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiNx) matrices. By coupling the high refractive index of SiNx to the relevant choice of dielectric thickness in a SiNx/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiNx matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

  13. Ag doped silicon nitride nanocomposites for embedded plasmonics

    SciTech Connect

    Bayle, M.; Bonafos, C. Benzo, P.; Benassayag, G.; Pécassou, B.; Carles, R.; Khomenkova, L.; Gourbilleau, F.

    2015-09-07

    The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiN{sub x}) matrices. By coupling the high refractive index of SiN{sub x} to the relevant choice of dielectric thickness in a SiN{sub x}/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiN{sub x} matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

  14. Optimization of the gelcasting of a silicon nitride formulation

    SciTech Connect

    Omatete, O.O.; Pollinger, J.P.; O`Young, K.

    1995-06-01

    An optimum gelcasting condition for a silicon nitride formulation was determined using the Taguchi statistical method. An L{sub 8}(4{sup 1} {times} 2{sup 4}) design, in which the effects of one factor at four levels and four factors at two levels were evaluated in only eight experiments, was used. The factors at two levels were: the total monomer concentration, the monomer/crosslinker ratio, the initiator concentration, and the initiator/catalyst ratio; the factor at four levels was the initiator concentration per mass of the slip. The primary criterion used to determine optimum design was the green strength of the dried part, although three other parameters were measured: initial slip viscosity, time for the slip viscosity to reach 300 mPa.s. at 25 C, and time for the slip to gel at 50 C. The optimum gelcasting conditions from the designed experiments predicted 80% increase in green strength (4.3 MPa versus 2.4 MPa, the initial value). The confirmation runs showed only a 60% increase (3.8 MPa).

  15. Gas pressure sintering of silicon nitride to optimize fracture toughness

    SciTech Connect

    Tiegs, T.N.; Nunn, S.D.; Beavers, T.M.; Menchhofer, P.A.; Barker, D.L.; Coffey, D.W.

    1995-06-01

    Gas-pressure sintering (GPS) can be used to densify silicon nitride containing a wide variety of sintering additives. Parameters affecting the sintering behavior include densification temperature, densification time, grain growth temperature, grain growth time and heating rates. The Si{sub 3}N{sub 4}-6% Y{sub 2}O{sub 3}-2% A1{sub 2}O{sub 3} samples sintered to high densities at all conditions used in the present study, whereas the Si{sub 3}N{sub 4}-Sr{sub 2}La{sub 4}Yb{sub 4}(SiO{sub 4}){sub 6}O{sub 2} samples required the highest temperatures and longest times to achieve densities {ge}98 % T. D. The main effect on the fracture toughness for Si{sub 3}N{sub 4}-6% Y{sub 2}O{sub 3}-2% A1{sub 2}O{sub 3} samples was the use of a lower densification temperature, which was 1900C in the present study. For the Si{sub 3}N{sub 4}-Sr{sub 2}La{sub 4}Yb{sub 4}SiO4{sub 4}){sub 6}O{sub 2} composition, fracture toughness was sensitive to and improved by a slower heating rate (10c/min), a lower densification temperature (1900`), a higher grain growth temperature (2000C), and a longer grain growth time (2 h).

  16. Occurence and implications of silicon nitride in enstatite chondrites

    NASA Astrophysics Data System (ADS)

    Alexander, C. M. O'd.; Swan, P.; Prombo, C. A.

    1994-01-01

    Silicon nitride Si3N4, has previously been observed to be a common constituent of acid residues of Qingzhen (EH3) and Indarch (EH4). Ion probe analysis of the Si, N and C isotopic compositions of individual Si3N4 grains from Qingzhen and Indarch acid residues suggest most, if not all, grains are Solar System in origin. A few grains have isotopically anomalous C but this is probably due to small presolar SiC grains adhering to them. In situ observations of the Si3N4 in Qingzhen show that it is only present within, and probably exsolved from, host phases which contain elemental Si in solid solution. Thermodynamic calculations suggest that the Si3N4 probably formed during metamorphism and not in the nebula. Thermodynamic calculations also show that sinoite (Si2N2O) and not Si3N4 should be the stable phase during metamorphism. It appears that kinetic factors must have inhibited the formation if sinoite in Qimgzhen and Indarch.

  17. Laser damage studies of silicon oxy-nitride narrowband reflectors

    NASA Astrophysics Data System (ADS)

    Milward, Jonathan R.; Lewis, Keith L.; Sheach, K.; Heinecke, Rudolf A.

    1993-06-01

    A series of sinusoidally modulated, plasma deposited, silicon oxy-nitride, narrow band reflectors have been examined with a view to understanding the relative roles of electric field effects, defect type, surface roughness, thickness, and coating absorption on the laser damage threshold. The damage threshold measurements were made at 0.532 micrometers with a range of spot sizes, a pulse length of 15 ns (full width at half maximum intensity), and each site was tested with 100 shots at a 10 Hz repetition rate. The damage threshold was essentially constant at around 2 J/cm2 for all the samples, and was defect dominated. Three types of topological defects were discovered using a WYKO three dimensional surface profiler, and one of the defect types was responsible for a large fraction of the damage events. It is postulated that this 5 micrometers hemispherical defect may behave either as a microlens which enhances the peak fluence that the underlying coating is subjected to, or as a center for enhanced electric field effects.

  18. Barium aluminosilicate reinforced in situ with silicon nitride

    SciTech Connect

    Richardson, K.K.; Freitag, D.W.; Hunn, D.L.

    1995-10-01

    Advanced ceramic composite materials that exhibit high strength and toughness with good thermal shock resistance are needed for emerging high-temperature engineering applications. A recently developed in situ reinforced barium aluminosilicate glass-ceramic shows promise of meeting many of the requirements for these types of applications with the added benefit of low-cost fabrication through densification by pressureless sintering. The material is toughened through in situ growth of rodlike {beta}-Si{sub 3}N{sub 4} grains resulting from the {alpha}-{beta} silicon nitride phase transformation. Microstructural development and material properties for temperatures up to 1,400 C are discussed. When compared to monolithic barium aluminosilicate, barium aluminosilicate reinforced with 70% by volume of Si{sub 3}N{sub 4} shows a significant increase in flexural strength (from 80 to 565 MPa) and fracture toughness (from 1.8 to 5.74 MPa {center_dot} m{sup 1/2}) with a high resistance to thermal shock.

  19. Testing of silicon nitride ceramic bearings for total hip arthroplasty.

    PubMed

    Bal, B Sonny; Khandkar, Ashok; Lakshminarayanan, R; Clarke, Ian; Hoffman, Aaron A; Rahaman, Mohamed N

    2008-11-01

    Modern ceramic bearings used in total hip arthroplasty (THA) consist of a femoral head (ball) articulating inside a hemispherical acetabular cup (socket); the ball and socket are made of alumina (Al(2)O(3)) and Al(2)O(3)-based composite materials. In the present study, total hip bearings were made from a different ceramic material, silicon nitride (Si(3)N(4)), by sintering and hot isostatic pressing of powders. The resulting material had improved mechanical properties over modern Al(2)O(3) THA bearings, with a flexural strength of 920 +/- 70 MPa, a Weibull modulus of 19, and a fracture toughness of 10 +/- 1 MPa m(1/2). Unlike zirconia-based ceramics that have also been used in THA, accelerated aging of Si(3)N(4) did not adversely affect the flexural strength. In simulated wear tests, Si(3)N(4) acetabular cups produced low-volumetric wear whether articulating against Si(3)N(4) or cobalt-chromium (CoCr) femoral heads. The results of this investigation suggest that Si(3)N(4) may allow improved THA bearings that combine the reliability of metal femoral heads with the low wear advantages of ceramic materials. PMID:18491410

  20. Silicon Nitride Bioceramics Induce Chemically Driven Lysis in Porphyromonas gingivalis.

    PubMed

    Pezzotti, Giuseppe; Bock, Ryan M; McEntire, Bryan J; Jones, Erin; Boffelli, Marco; Zhu, Wenliang; Baggio, Greta; Boschetto, Francesco; Puppulin, Leonardo; Adachi, Tetsuya; Yamamoto, Toshiro; Kanamura, Narisato; Marunaka, Yoshinori; Bal, B Sonny

    2016-03-29

    Organisms of Gram-negative phylum bacteroidetes, Porphyromonas gingivalis, underwent lysis on polished surfaces of silicon nitride (Si3N4) bioceramics. The antibacterial activity of Si3N4 was mainly the result of chemically driven principles. The lytic activity, although not osmotic in nature, was related to the peculiar pH-dependent surface chemistry of Si3N4. A buffering effect via the formation of ammonium ions (NH4(+)) (and their modifications) was experimentally observed by pH microscopy. Lysis was confirmed by conventional fluorescence spectroscopy, and the bacteria's metabolism was traced with the aid of in situ Raman microprobe spectroscopy. This latter technique revealed the formation of peroxynitrite within the bacterium itself. Degradation of the bacteria's nucleic acid, drastic reduction in phenilalanine, and reduction of lipid concentration were observed due to short-term exposure (6 days) to Si3N4. Altering the surface chemistry of Si3N4 by either chemical etching or thermal oxidation influenced peroxynitrite formation and affected bacteria metabolism in different ways. Exploiting the peculiar surface chemistry of Si3N4 bioceramics could be helpful in counteracting Porphyromonas gingivalis in an alkaline pH environment. PMID:26948186

  1. Photoluminescence and electronic transitions in cubic silicon nitride

    PubMed Central

    Museur, Luc; Zerr, Andreas; Kanaev, Andrei

    2016-01-01

    A spectroscopic study of cubic silicon nitride (γ-Si3N4) at cryogenic temperatures of 8 K in the near IR - VUV range of spectra with synchrotron radiation excitation provided the first experimental evidence of direct electronic transitions in this material. The observed photoluminescence (PL) bands were assigned to excitons and excited and centers formed after the electron capture by neutral structural defects. The excitons are weakly quenched on neutral and strongly on charged defects. The fundamental band-gap energy of 5.05 ± 0.05 eV and strong free exciton binding energy ~0.65 eV were determined. The latter value suggests a high efficiency of the electric power transformation in light in defect-free crystals. Combined with a very high hardness and exceptional thermal stability in air, our results indicate that γ-Si3N4 has a potential for fabrication of robust and efficient photonic emitters. PMID:26725937

  2. Occurence and implications of silicon nitride in enstatic chondrites

    NASA Technical Reports Server (NTRS)

    Alexander, C. M. O'D.; Swan, P.; Prombo, C. A.

    1994-01-01

    Silicon nitride Si3N4, has previously been observed to be a common constituent of acid residues of Qingzhen (EH3) and Indarch (EH4). Ion probe analysis of the Si, N and C isotopic compositions of individual Si3N4 grains from Qingzhen and Indarch acid residues suggest most, if not all, grains are Solar System in origin. A few grains have isotopically anomalous C but this is probably due to small presolar SiC grains adhering to them. In situ observations of the Si3N4 in Qingzhen show that it is only present within, and probably exsolved from, host phases which contain elemental Si in solid solution. Thermodynamic calculations suggest that the Si3N4 probably formed during metamorphism and not in the nebula. Thermodynamic calculations also show that sinoite (Si2N2O) and not Si3N4 should be the stable phase during metamorphism. It appears that kinetic factors must have inhibited the formation if sinoite in Qimgzhen and Indarch.

  3. Silicon nitride Micromesh Bolometer Array for Submillimeter Astrophysics.

    PubMed

    Turner, A D; Bock, J J; Beeman, J W; Glenn, J; Hargrave, P C; Hristov, V V; Nguyen, H T; Rahman, F; Sethuraman, S; Woodcraft, A L

    2001-10-01

    We present the design and performance of a feedhorn-coupled bolometer array intended for a sensitive 350-mum photometer camera. Silicon nitride micromesh absorbers minimize the suspended mass and heat capacity of the bolometers. The temperature transducers, neutron-transmutation-doped Ge thermistors, are attached to the absorber with In bump bonds. Vapor-deposited electrical leads address the thermistors and determine the thermal conductance of the bolometers. The bolometer array demonstrates a dark noise-equivalent power of 2.9 x 10(-17) W/ radicalHz and a mean heat capacity of 1.3 pJ/K at 390 mK. We measure the optical efficiency of the bolometer and feedhorn to be 0.45-0.65 by comparing the response to blackbody calibration sources. The bolometer array demonstrates theoretical noise performance arising from the photon and the phonon and Johnson noise, with photon noise dominant under the design background conditions. We measure the ratio of total noise to photon noise to be 1.21 under an absorbed optical power of 2.4 pW. Excess noise is negligible for audio frequencies as low as 30 mHz. We summarize the trade-offs between bare and feedhorn-coupled detectors and discuss the estimated performance limits of micromesh bolometers. The bolometer array demonstrates the sensitivity required for photon noise-limited performance from a spaceborne, passively cooled telescope. PMID:18364768

  4. Characterization of Idealized Helical Repeat Proteins in Silicon Nitride Nanopores

    NASA Astrophysics Data System (ADS)

    Li, Jiali; Ledden, Bradley; Talaga, David; Cortajarena, Aitziber; Regan, Lynne

    2012-02-01

    In this work, we report the measurement of consensus tetratricopeptide repeat (CTPR) proteins with single silicon nitride nanopores. The CTPR proteins were measured in KCl solution at pH below and above its isoelectric point (pI), as well as with and without denaturing agent, Guanidine HCl. When a CTPR protein molecule transits through a nanopore driven by an applied voltage, it partially blocks the ions (K^+ and Cl^-) flow in the nanopore and generates a characteristic electric current blockage signal. The current blockage signal reveals information about the size, conformation, and primary sequence of the CTPR protein molecule. Previous translocation studies carried out with DNA have established that higher bias voltages result in shorter duration current blockages indicating that DNA translocates faster at a stronger electric field. However, our CTPR translocation studies show that longer duration current blockades were observed at higher bias voltages. We discuss how the inhomogeneous distribution of the primary charge sequence of the CTPR proteins predicts translocation barriers that are proportional to the bias voltage. Larger barriers at higher bias voltages will result in longer translocation times, consistent with our experimental results.

  5. DNA characterization with Ion Beam Sculpted Silicon Nitride Nanopores

    PubMed Central

    Rollings, Ryan C.; McNabb, David S.; Li, Jiali

    2013-01-01

    Solid state nanopores are emerging as robust single molecule electronic measurement devices and as platforms for confining biomolecules for further analysis. The first silicon nitride nanopore to detect individual DNA molecules were fabricated using ion beam sculpting (IBS), a method that uses broad, low energy ion beams to create nanopores with dimensions ranging from 2 to 20 nm. In this chapter, we discuss the fabrication, characterization, and use of IBS sculpted nanopores as well as efficient uses of pClamp and MATLAB software suites for data acquisition and analysis. The fabrication section will cover the repeatability and the pore size limits. The characterization discussion focuses on the geometric properties as measured by low and high resolution transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), and energy filtered TEM (EFTEM). The section on translocation experiments focuses on how to use tools commonly available to the nanopore experimenter to determine whether a pore will be useful for experimentation or if it should be abandoned. A memory efficient method of taking data using Clampex’s event-driven mode and dual channel recording will be presented, followed by an easy to implement multi-threshold event detection and classification method using MATLAB software. PMID:22528259

  6. Silicon Nitride Creep Under Various Specimen-Loading Configurations

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Holland, Frederic A.

    2000-01-01

    Extensive creep testing of a hot-pressed silicon nitride (NC 132) was performed at 1300 C in air using five different specimen-loading configurations: (1) pure tension, (2) pure compression, (3) four-point uniaxial flexure, (4) ball-on-ring biaxial flexure, and (5) ring-on-ring biaxial flexure. This paper reports experimental results as well as test techniques developed in this work. Nominal creep strain and its rate for a given nominal applied stress were greatest in tension, least in compression, and intermediate in uniaxial and biaxial flexure. Except for the case of compression loading, nominal creep strain generally decreased with time, resulting in a less-defined steady-state condition. Of the four creep formulations-power-law, hyperbolic sine, step, and redistribution--the conventional power-law formulation still provides the most convenient and reasonable estimation of the creep parameters of the NC 132 material. The data base to be obtained will be used to validate the NASA Glenn-developed design code CARES/Creep (ceramics analysis and reliability evaluation of structures and creep).

  7. Optimization of the gelcasting of a silicon nitride formulation

    SciTech Connect

    Omatete, O.O.; O`Young, K.; Pollinger, J.P.

    1995-12-31

    An optimum gelcasting condition for a silicon nitride formulation was determined using the Taguchi statistical method. An L{sub 8}(4{sup 1} x 2{sup 4}) design, in which the effects of one factor at four levels and four factors at two levels were evaluated in only eight experiments, was used. The factors at two levels were: the total monomer concentration, the monomer/crosslinker ratio, the initiator concentration, and the initiator/catalyst ratio; the factor at four levels was the initiator concentration per mass of the slip. The primary criterion used to determine optimum design was the green strength of the dried part. Three other parameters were also considered: initial slip viscosity, time for the slip viscosity to reach 300 mPa.s at 25{degrees}C, and time for the slip to gel at 50{degrees}C. The optimum gelcasting conditions from the designed experiments predicted 80% increase in green strength (4.3 MPa versus 2.4 MPa, the initial value). The confirmation runs showed only a 60% increase in strength (3.9 MPa).

  8. The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

    NASA Astrophysics Data System (ADS)

    Rebohle, L.; Berencén, Y.; Wutzler, R.; Braun, M.; Hiller, D.; Ramírez, J. M.; Garrido, B.; Helm, M.; Skorupa, W.

    2014-09-01

    Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO2 and an Er-implanted layer made of SiO2, Si-rich SiO2, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficiencies in the order of 2 × 10-3 (for SiO2:Er) or 2 × 10-4 (all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5-1.5 × 10-15 cm-2. Whereas the fraction of potentially excitable Er ions in SiO2 can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO2 or Si nitride compared to SiO2 as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er3+. For all investigated devices, EL quenching cross sections in the 10-20 cm2 range and charge-to-breakdown values in the range of 1-10 C cm-2 were measured. For the present design with a SiO2 acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.

  9. Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry Pérot optical filters

    NASA Astrophysics Data System (ADS)

    Huang, H.; Winchester, K.; Liu, Y.; Hu, X. Z.; Musca, C. A.; Dell, J. M.; Faraone, L.

    2005-03-01

    This paper reports an investigation on techniques for determining elastic modulus and intrinsic stress gradient in plasma-enhanced chemical vapor deposition (PECVD) silicon nitride thin films. The elastic property of the silicon nitride thin films was determined using the nanoindentation method on silicon nitride/silicon bilayer systems. A simple empirical formula was developed to deconvolute the film elastic modulus. The intrinsic stress gradient in the films was determined by using micrometric cantilever beams, cross-membrane structures and mechanical simulation. The deflections of the silicon nitride thin film cantilever beams and cross-membranes caused by in-thickness stress gradients were measured using optical interference microscopy. Finite-element beam models were built to compute the deflection induced by the stress gradient. Matching the deflection computed under a given gradient with that measured experimentally on fabricated samples allows the stress gradient of the PECVD silicon nitride thin films introduced from the fabrication process to be evaluated.

  10. Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

    SciTech Connect

    King, Sean W. Davis, Robert F.; Nemanich, Robert J.

    2014-11-01

    Scandium nitride (ScN) is a group IIIB transition metal nitride semiconductor with numerous potential applications in electronic and optoelectronic devices due to close lattice matching with gallium nitride (GaN). However, prior investigations of ScN have focused primarily on heteroepitaxial growth on substrates with a high lattice mismatch of 7%–20%. In this study, the authors have investigated ammonia (NH{sub 3}) gas source molecular beam epitaxy (NH{sub 3}-GSMBE) of ScN on more closely lattice matched silicon carbide (SiC) and GaN surfaces (<3% mismatch). Based on a thermodynamic analysis of the ScN phase stability window, NH{sub 3}-GSMBE conditions of 10{sup −5}–10{sup −4} Torr NH{sub 3} and 800–1050 °C where selected for initial investigation. In-situ x-ray photoelectron spectroscopy (XPS) and ex-situ Rutherford backscattering measurements showed all ScN films grown using these conditions were stoichiometric. For ScN growth on 3C-SiC (111)-(√3 × √3)R30° carbon rich surfaces, the observed attenuation of the XPS Si 2p and C 1s substrate core levels with increasing ScN thickness indicated growth initiated in a layer-by-layer fashion. This was consistent with scanning electron microscopy (SEM) images of 100–200 nm thick films that revealed featureless surfaces. In contrast, ScN films grown on 3C-SiC (111)-(3 × 3) and 3C-SiC (100)-(3 × 2) silicon rich surfaces were found to exhibit extremely rough surfaces in SEM. ScN films grown on both 3C-SiC (111)-(√3 × √3)R30° and 2H-GaN (0001)-(1 × 1) epilayer surfaces exhibited hexagonal (1 × 1) low energy electron diffraction patterns indicative of (111) oriented ScN. X-ray diffraction ω-2θ rocking curve scans for these same films showed a large full width half maximum of 0.29° (1047 arc sec) consistent with transmission electron microscopy images that revealed the films to be poly-crystalline with columnar grains oriented at ≈15° to the [0001] direction of the

  11. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    NASA Astrophysics Data System (ADS)

    Wan, Yimao; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-01

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiNx) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiNx stack, recombination current density J0 values of 9, 11, 47, and 87 fA/cm2 are obtained on 10 Ω.cm n-type, 0.8 Ω.cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J0 on n-type 10 Ω.cm wafers is further reduced to 2.5 ± 0.5 fA/cm2 when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiNx stack is thermally stable at 400 °C in N2 for 60 min on all four c-Si surfaces. Capacitance-voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiNx stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  12. Plasma-enhanced CVD silicon nitride antireflection coatings for solar cells

    NASA Technical Reports Server (NTRS)

    Johnson, C. C.; Wydeven, T.; Donohoe, K.

    1983-01-01

    Multilayer plasma-enhanced chemical vapor deposition (PECVD) silicon nitride antireflection coatings were deposited on space quality silicon solar cells. Preliminary experiments indicated that multilayer coatings decreased the total reflectance of polished silicon from 35 percent to less than 3 percent over the spectral range 0.4-1.0 micron. The solar cell energy conversion efficiency was increased from an average of 8.84 percent to an average of 12.63 percent.

  13. Fatigue life of high-speed ball bearings with silicon nitride balls

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1974-01-01

    Hot-pressed silicon nitride was evaluated as a rolling-element bearing material. The five-ball fatigue tester was used to test 12.7-mm- diameter silicon nitride balls at maximum Hertz stresses ranging from 4.27 x 10 to the 9th power n/sq m to 6.21 x 10 to the 9th power n/sq m at a race temperature of 328K. The fatigue life of NC-132 hot-pressed silicon nitride was found to be equal to typical bearing steels and much greater than other ceramic or cermet materials at the same stress levels. A digital computer program was used to predict the fatigue life of 120-mm- bore angular-contact ball bearings containing either steel or silicon nitride balls. The analysis indicates that there is no improvement in the lives of bearings of the same geometry operating at DN values from 2 to 4 million where silicon nitride balls are used in place of steel balls.

  14. Process for producing silicon nitride based articles of high fracture toughness and strength

    DOEpatents

    Huckabee, M.; Buljan, S.T.; Neil, J.T.

    1991-09-10

    A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  15. Process for producing silicon nitride based articles of high fracture toughness and strength

    DOEpatents

    Huckabee, Marvin; Buljan, Sergej-Tomislav; Neil, Jeffrey T.

    1991-01-01

    A process for producing a silicon nitride-based article of improved fracture toughness and strength. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12 m.sup.2 /g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  16. Silicon nitride ceramic matrix for CMCs from silane derived Si powders and preceramic polymers

    SciTech Connect

    Rhine, W.E.; Lightfoot, A.; Seyferth, D.; Haggerty, J.S.

    1995-10-01

    Si powders synthesized by the laser pyrolysis of silane can be nitrided at 1,200--1,250 C, producing an improved reaction bonded silicon nitride. This RBSN is a potential matrix for composites since it can be formed at temperatures which do not degrade the strengths of commercially available amorphous ceramic fibers. However, the density of the RBSN matrix has been limited to about 75% using the silane-derived Si powder. Combining Si powders and preceramic polymers offers an approach for increasing the density and mechanical properties of the reaction-formed Si{sub 3}N{sub 4} matrix. The incorporation of polysilazanes inhibited the nitridation oat 1,250 C, but samples could be effectively nitrided at 1,400 C. These higher nitriding temperatures are compatible with SCS-6 and other low-oxygen, crystalline SiC fibers which can be used as reinforcements for ceramic composites.

  17. Hafnium nitride buffer layers for growth of GaN on silicon

    DOEpatents

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  18. Enhanced proliferation and osteocalcin production by human osteoblast-like MG63 cells on silicon nitride ceramic discs.

    PubMed

    Kue, R; Sohrabi, A; Nagle, D; Frondoza, C; Hungerford, D

    1999-07-01

    The biocompatibility of silicon nitride (Si3N4) was assessed in an in vitro model using the human osteoblast-like MG-63 cell line. Cells were propagated on the surface of: reaction-bonded silicon nitride discs, sintered after reaction-bonded silicon nitride discs or control polystyrene surface for 48 h. Compared to cells propagated on polystyrene surface, cells grown on the surface of unpolished silicon nitride discs had significantly lower cell yield and decreased osteocalcin production. In contrast, cells on the surface of polished silicon nitride discs showed similar proliferative capacity to control cells propagated on polystyrene surface. Cells propagated on polished discs also produced higher levels of osteocalcin than cells on unpolished discs. SEM analysis showed cells with well-delineated morphology and cytoplasmic extensions when propagated on polished sintered after reaction-bonded discs. Cells appeared more spherical, when grown on polished reaction-bonded discs. The results of this study suggest that silicon nitride is a non-toxic, biocompatible ceramic surface for the propagation of functional human bone cells in vitro. Its high wear resistance and ability to support bone cell growth and metabolism make silicone nitride an attractive candidate for clinical application. Further studies are needed to explore the feasibility of using silicon nitride clinically as an orthopedic biomaterial. PMID:10395388

  19. Crystal quality and growth evolution of aluminum nitride on silicon carbide

    NASA Astrophysics Data System (ADS)

    Moe, Craig G.; Wu, Yuan; Keller, Stacia; Speck, James S.; Denbaars, Steven P.; Emerson, David

    2006-05-01

    High quality base layer aluminum nitride films have become increasingly desirable with the advent of deep ultraviolet (<280 nm) emitters for water purification, solid state lighting, and biochemical detection applications. In this study, the influence of the MOCVD growth conditions on the structural properties of aluminum nitride grown on silicon carbide, both as-delivered and chemomechanically polished, was studied. Pre-deposition nitridation of the SiC substrate, growth temperature, growth rate, ammonia flow (V/III ratio), and gallium surfactants were explored. Films were analyzed with transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray diffraction.

  20. Ion bombardment-induced mechanical stress in plasma-enhanced deposited silicon nitride and silicon oxynitride films

    SciTech Connect

    Claassen, W.A.P.

    1987-03-01

    The authors have studied the influence of different deposition conditions on the mechanical stress of silicon nitride and silicon oxynitride layers formed by plasma-enhanced deposition onto silicon substrates. It appears that the mechanical stress of the as-deposited silicon (oxy)nitride layer is a combined effect of the extent of ion bombardment and the deposition temperature on the hydrogen desorption rate. Deposited films show a tensile stress character when the hydrogen desorption rate is thermally controlled, whereas in the case of an ion-bombardment-controlled hydrogen desorption rate the deposited films have a compressive stress. It is also shown that due to annealing at temperatures above the deposition temperature the films are densified as a result of hydrogen desorption and cross-linking.

  1. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

    SciTech Connect

    Atwater, H. A.

    2007-11-01

    This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

  2. Tensile test of pressureless-sintered silicon nitride at elevated temperature

    NASA Technical Reports Server (NTRS)

    Matsusue, K.; Fujisawa, Y.; Takahara, K.

    1985-01-01

    Uniaxial tensile strength tests of pressureless sintered silicon nitride were carried out in air at temperatures ranging from room temperature up to 1600 C. Silicon nitrides containing Y2O3, Al2O3, Al2O3-MgO, or MgO-CeO2 additives were tested. The results show that the composition of the additive used influences the strength characteristics of the silicon nitride. The tensile strength rapidly decreased at temperatures above 1000 C for the materials containing MgO as the additive and above 1000 C for the material with Y2O3. When the temperature increased to as high as 1300 C, the strength decreased to about 10 percent of the room temperature strength in each case. Observations of the fracture origin and of the crack propagation on the fracture surfaces are discussed.

  3. Transient and steady-state erosion of in-situ reinforced silicon nitride

    SciTech Connect

    Karasek, K.R.; Whalen, P.J.; Rateick, R.G. Jr.; Hamilton, A.C.; Routbort, J.L.

    1994-10-01

    Relative to most other materials silicon nitride is very erosion resistant. However, the resulting surface flaws degrade strength - a serious concern for component designers. AlliedSignal Ceramic Components GS-44 in-situ reinforced silicon nitride was eroded in a slinger apparatus. Both transient (extremely low level) and steady-state erosion regimes were investigated. Alumina particles with effective average diameters of 140 Jim and 63 {mu}m were used at velocities of 50 m/s, 100 m/s, and 138 m/s. Biaxial tensile strength was measured. Strength decreased by about 15% after a very small erodent dosage and then remained virtually constant with further erosion. In-situ reinforcement produces R-curve behavior in which the fracture toughness increases with crack size. The effect of this is quite dramatic with strength loss being significantly less than expected for a normal silicon nitride with constant fracture toughness.

  4. Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire

    PubMed Central

    2014-01-01

    Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting. PMID:25294975

  5. Foreign Object Damage in Flexure Bars of Two Gas-Turbine Grade Silicon Nitrides

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

    2004-01-01

    Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through strength testing of flexure test specimens impacted by steel ball projectiles with a diameter of 1.59 mm in a velocity range from 220 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub lc)). The use of an additional equiaxed, fine-grained silicon nitride (NC132) showed that fracture toughness was a key material parameter affecting FOD resistance. The observed damages generated by projectile impact were typically in the forms of well- or ill-developed ring and cone cracks with little presence of radial cracks.

  6. The effects of annealing temperature on the photoluminescence from silicon nitride multilayer structures

    NASA Astrophysics Data System (ADS)

    Scardera, G.; Puzzer, T.; Perez-Wurfl, I.; Conibeer, G.

    2008-07-01

    The room temperature photoluminescence from silicon nitride multilayer structures, grown by plasma enhanced chemical vapour deposition, is monitored for different annealing temperatures and is correlated to structural and molecular changes in the film. Use of various annealing temperatures from 600 °C to 1150 °C results in films which vary from being completely amorphous to an amorphous matrix containing silicon nanocrystals, and finally to a fully crystallized composite containing silicon, α-Si 3N 4 and β-Si 3N 4 nanocrystals. Coupled with the observed trends seen with grazing incidence X-ray diffraction, transmission electron microscopy, and infra-red absorbance with annealing temperature, the photoluminescence from silicon nanocrystals embedded in amorphous silicon nitride is attributed to the presence of the nanocrystals in the film and not to transitions between band tails of the remaining amorphous matrix.

  7. Processing and mechanical properties of silicon nitride/silicon carbide ceramic nanocomposites derived from polymer precursors

    NASA Astrophysics Data System (ADS)

    Gasch, Matthew Jeremy

    Creep deformation of silicon nitride and silicon carbide ceramics is dominated by a solution-precipitation process through the glassy interface phase at grain boundary regions, which is formed by the reaction of oxide additives with the silicon oxide surface layer of the ceramic powder particles during liquid phase sintering. The ultimate approach to increase the creep resistance of these materials is to decrease the oxide content at the grain boundaries, rendering the solution-precipitation process non-effective. This research presents a new method of enhancing the creep properties of silicon nitride/silicon carbide composites by forming micro-nano and nano-nano microstructures during sintering. Starting from amorphous Si-C-N powders of micrometric size particles, powders were consolidated in three ways: (1) Consolidation of pyrolyzed powders without additives, (2) Electric Field Assisted Sintering (EFAS) of pyrolyzed powders with and without additives and (3) High pressure sintering. In all three cases, nanocomposites with varied grain size were achieved. High temperature mechanical creep testing was performed on the samples sintered by EFAS. Creep rates ranged from 1 x 10-8/s to 1 x 10-11/s depending on method in which powders were prepared and total oxide additive amount. For samples with high oxide contents the stress exponent was found to be n ˜ 2 with an activation energy of Q ˜ 600kJ/mol*K, indicating the typical solution precipitation process of deformation. But for the nano-nano composites sintered with little to none oxide additive, the stress exponent was found to be n ˜ 1 with and activation energy of Q ˜ 200kJ/mol*K, hinting at a diffusion controlled mechanism of creep deformation. For the nano-nano composites sintered without oxide additives, oxygen was found in the microstructure. However, oxygen contamination was found to distribute at grain boundary regions especially triple junctions. It is suggested that this highly dispersed distribution of

  8. Critical flaw size in silicon nitride ball bearings

    NASA Astrophysics Data System (ADS)

    Levesque, George Arthur

    Aircraft engine and bearing manufacturers have been aggressively pursuing advanced materials technology systems solutions to meet main shaft-bearing needs of advanced military aircraft engines. Ceramic silicon nitride hybrid bearings are being developed for such high performance applications. Though silicon nitride exhibits many favorable properties such as high compressive strength, high hardness, a third of the density of steel, low coefficient of thermal expansion, and high corrosion and temperature resistance, they also have low fracture toughness and are susceptible to failure from fatigue spalls emanating from pre-existing surface flaws that can grow under rolling contact fatigue (RCF). Rolling elements and raceways are among the most demanding components in aircraft engines due to a combination of high cyclic contact stresses, long expected component lifetimes, corrosive environment, and the high consequence of fatigue failure. The cost of these rolling elements increases exponentially with the decrease in allowable flaw size for service applications. Hence the range of 3D non-planar surface flaw geometries subject to RCF is simulated to determine the critical flaw size (CFS) or the largest allowable flaw that does not grow under service conditions. This dissertation is a numerical and experimental investigation of surface flaws in ceramic balls subjected to RCF and has resulted in the following analyses: Crack Shape Determination: the nucleation of surface flaws from ball impact that occurs during the manufacturing process is simulated. By examining the subsurface Hertzian stresses between contacting spheres, their applicability to predicting and characterizing crack size and shape is established. It is demonstrated that a wide range of cone and partial cone cracks, observed in practice, can be generated using the proposed approaches. RCF Simulation: the procedure and concerns in modeling nonplanar 3D cracks subject to RCF using FEA for stress intensity

  9. Toxicity in vitro of some silicon carbides and silicon nitrides: whiskers and powders.

    PubMed

    Svensson, I; Artursson, E; Leanderson, P; Berglind, R; Lindgren, F

    1997-03-01

    The objectives of this work were to investigate the toxicity of silicon carbide whiskers and powders and silicon nitride whiskers and powders and to compare their toxicity with the toxicity of crocidolite. The effects studied were inhibition of the cloning efficiency of V79 cells, formation of DNA strand breaks by means of a nick translation assay, formation of oxygen radicals in three different assays, and the ability to stimulate neutrophils to produce hydroxyl radicals. All materials showed concentration-dependent inhibition of the cloning efficiency of V79 cells. The inhibition by the most toxic whiskers was in the same order of magnitude as that of crocidolite. Milled whiskers and powders were less toxic than the whiskers. There was a high DNA breaking potential for crocidolite and four of the silicon carbide whiskers and a rather low one for the other materials. Formation of hydroxyl radicals was found for crocidolite and one of the silicon carbide whiskers. In the neutrophil activation test, there was a great variation in the different materials' abilities to activate neutrophils. There was also a good correlation between chemiluminescence and H2O2 formation. The highest activation was found in neutrophils exposed to two of the silicon carbide whiskers and one milled whisker. The conclusion of the investigation is that some of the ceramic materials studied had damaging biological effects comparable to or greater than those of crocidolite. The results from the investigation clearly imply that caution is needed in the introduction of new ceramic fiber materials, so that the correct precautions and protective devices are used in order to avoid harm to the personnel handling the material. PMID:9055957

  10. Si quantum dots in silicon nitride: Quantum confinement and defects

    SciTech Connect

    Goncharova, L. V. Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.; Nguyen, P. H.

    2015-12-14

    Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiN{sub x}:H) matrix was examined over a broad range of stoichiometries from Si{sub 3}N{sub 2.08} to Si{sub 3}N{sub 4.14}, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiN{sub x} films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH{sub 4} and NH{sub 3} gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si{sub 3}N{sub x} compositions. There is a red-shift of the measured peaks from ∼2.3 eV to ∼1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (∼Si{sub 3}N{sub 3.15}) in which the maximum of light emission is observed.

  11. Low-stress silicon nitride layers for MEMS applications

    NASA Astrophysics Data System (ADS)

    Iliescu, Ciprian; Wei, Jiashen; Chen, Bangtao; Ong, Poh Lam; Tay, Francis E. H.

    2006-12-01

    The paper presents two deposition methods for generation of SiN x layers with "zero" residual stress in PECVD reactors: mixed frequency and high power in high frequency mode (13.56 MHz). Traditionally, mix frequency mode is commonly used to produce low stress SiN x layers, which alternatively applies the HF and LF mode. However, due to the low deposition rate of LF mode, the combined deposition rate of mix frequency is quite small in order to produce homogenous SiN x layers. In the second method, a high power which was up to 600 W has been used, may also produce low residual stress (0-20 MPa), with higher deposition rate (250 to 350 nm/min). The higher power not only leads to higher dissociation rates of gases which results in higher deposition rates, but also brings higher N bonding in the SiN x films and higher compressive stress from higher volume expansion of SiN x films, which compensates the tensile stress and produces low residual stress. In addition, the paper investigates the influence of other important parameters which have great impact to the residual stress and deposition rates, such as reactant gases flow rate and pressure. By using the final optimized recipe, masking layer for anisotropic wet etching in KOH and silicon nitride cantilever have been successfully fabricated based on the low stress SiN x layers. Moreover, nanoporous membrane with 400nm pores has also been fabricated and tested for cell culture. By cultivating the mouse D1 mesenchymal stem cells on top of the nanoporous membrane, the results showed that mouse D1 mesenchymal stem cells were able to grow well. This shows that the nanoporous membrane can be used as the platform for interfacing with living cells to become biocapsules for biomolecular separation.

  12. Chemical control of physical properties in silicon nitride films

    NASA Astrophysics Data System (ADS)

    Xu, Xiangdong; Zhou, Dong; He, Qiong; Jiang, Yadong; Fan, Taijun; Huang, Long; Ao, Tianhong; He, Shaowei

    2013-06-01

    Amorphous hydrogenated silicon nitride ( a-SiN x H y ) films were prepared by plasma-enhanced chemical vapor deposition (PECVD). The physical properties and chemical structures of the resulting materials were systematically investigated. Results reveal that the a-SiN x H y films similarly consist of four kinds of Si-N groups, including Si3N4, H-Si-N3, H2-Si-N2, and Si3-Si-N. Deposition at 13.56 MHz and 300 ∘C with flow ratio of SiH4/NH3=30/30 sccm leads to the yield of Si0.39N0.38H0.23 films that exhibit excellent properties of high uniformity, high elastic modulus, moderate refractive index and optical band gap, low UV absorption, and ultralow residual stress (-0.17 MPa). Such Si0.39N0.38H0.23 films hold considerable promise for applications in solar cells and infrared sensors. In contrast, an increase of Si or N content in a-SiN x H y films will cause the degradation of the properties, so that the films are unsuitable for solar cells. Moreover, a new conception of network degree was proposed to evaluate and explain the properties of a-SiN x H y films. Particularly, this work discloses the relationships between the chemical structures and physical properties, and suggests a basic approach to the yield of a-SiN x H y films with controlled physical properties.

  13. Si quantum dots in silicon nitride: Quantum confinement and defects

    NASA Astrophysics Data System (ADS)

    Goncharova, L. V.; Nguyen, P. H.; Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.

    2015-12-01

    Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiNx:H) matrix was examined over a broad range of stoichiometries from Si3N2.08 to Si3N4.14, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiNx films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH4 and NH3 gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si3Nx compositions. There is a red-shift of the measured peaks from ˜2.3 eV to ˜1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (˜Si3N3.15) in which the maximum of light emission is observed.

  14. Comparative investigation of the biocompatibility of various silicon nitride ceramic qualities in vitro.

    PubMed

    Neumann, A; Reske, T; Held, M; Jahnke, K; Ragoss, C; Maier, H R

    2004-10-01

    There is a controversy about the biocompatibility of silicon nitride ceramics contained in the literature, which appears to be related to a factor of the individual chemical composition of different qualities of silicon nitride ceramics and of the different surface properties. This study attempts to investigate the cytotoxicity of different qualities of industrial silicon nitride ceramics applying an L929-cell culture model in a direct contact assay combined with a cell viability assessment. Five different qualities of industrial standard silicon nitride ceramics were chosen for in vitro testing. The chemical composition was determined by EDS analysis. Different biomedically approved aluminium oxide qualities, a titanium alloy, glass and polyvinylchloride (PVC) served as control materials. L929 mice fibroblasts were incubated directly on the materials for 24 h, stained with bisbenzimide and propidium iodine for double fluorochromasia viability testing, and evaluated by inversion-fluorescence microscopy to control cell morphology, viability and cell counts compared to empty well values. Scanning electron microscopy was applied to additionally investigate cell morphology. There was no observation of cytotoxic effects on the silicon nitride ceramic samples; moreover cell morphology remained the same as on aluminium oxide and titanium. Viability testing revealed the presence of avital cells exclusively on PVC, which served as a negative control. Cell counts on all polished surfaces showed significantly higher numbers, whereas some rough surface samples showed significantly lower numbers. We conclude that silicon nitride ceramics show no cytotoxic effects and should be considered for biomedical application owing to its favourable physiochemical properties, especially its superior resistance to mechanical stress, which would be useful for compression loaded conditions. Polished surfaces would appear to promote advanced biocompatibility. PMID:15516875

  15. Effects of surface grinding conditions on the reciprocating friction and wear behavior of silicon nitride

    SciTech Connect

    Blau, P.J.; Martin, R.L.; Zanoria, E.S.

    1997-12-31

    The relationship between two significantly different surface grinding conditions and the reciprocating ball-on-flat friction and wear behavior of a high-quality, structural silicon nitride material (GS-44) was investigated. The slider materials were silicon nitride NBD 200 and 440C stainless steel. Two machining conditions were selected based on extensive machining and flexural strength test data obtained under the auspices of an international, interlaboratory grinding study. The condition categorized as {open_quotes}low strength{close_quote} grinding used a coarse 80 grit wheel and produced low flexure strength due to machining-induced flaws in the surface. The other condition, regarded as {open_quotes}high strength grinding,{close_quotes} utilized a 320 grit wheel and produced a flexural strength nearly 70% greater. Grinding wheel surface speeds were 35 and 47 m/s. Reciprocating sliding tests were conducted following the procedure described in a newly-published ASTM standard (G- 133) for linearly-reciprocating wear. Tests were performed in directions both parallel and perpendicular to the grinding marks (lay) using a 25 N load, 5 Hz reciprocating frequency, 10 mm stroke length, and 100 m of sliding at room temperature. The effects of sliding direction relative to the lay were more pronounced for stainless steel than for silicon nitride sliders. The wear of stainless steel was less than the wear of the silicon nitride slider materials because of the formation of transfer particles which covered the sharp edges of the silicon nitride grinding grooves and reduced abrasive contact. The wear of the GS-44 material was much greater for the silicon nitride sliders than for the stainless steel sliders. The causes for the effects of surface-grinding severity and sliding direction on friction and wear of GS-44 and its counterface materials are explained.

  16. Antifuse with a single silicon-rich silicon nitride insulating layer

    DOEpatents

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  17. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

    DOEpatents

    Pugar, E.A.; Morgan, P.E.D.

    1987-09-15

    A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N/sub n/H/sub (n+m)/ wherein: n = 1--4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200--1700/degree/C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si/endash/N/endash/H intermediate enables chemical pathways to be explored previously unavailable in conventional solid-state approaches to silicon-nitrogen ceramics

  18. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

    DOEpatents

    Pugar, Eloise A.; Morgan, Peter E. D.

    1990-01-01

    A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.

  19. Processing study of injection molding of silicon nitride for engine applications

    NASA Technical Reports Server (NTRS)

    Rorabaugh, M. E.; Yeh, H. C.

    1985-01-01

    The high hardness of silicon nitride, which is currently under consideration as a structural material for such hot engine components as turbine blades, renders machining of the material prohibitively costly; the near net shape forming technique of injection molding is accordingly favored as a means for component fabrication. Attention is presently given to the relationships between injection molding processing parameters and the resulting microstructural and mechanical properties of the resulting engine parts. An experimental program has been conducted under NASA sponsorship which tests the quality of injection molded bars of silicon nitride at various stages of processing.

  20. Alternative Liquid Fuel Effects on Cooled Silicon Nitride Marine Gas Turbine Airfoils

    SciTech Connect

    Holowczak, J.

    2002-03-01

    With prior support from the Office of Naval Research, DARPA, and U.S. Department of Energy, United Technologies is developing and engine environment testing what we believe to be the first internally cooled silicon nitride ceramic turbine vane in the United States. The vanes are being developed for the FT8, an aeroderivative stationary/marine gas turbine. The current effort resulted in further manufacturing and development and prototyping by two U.S. based gas turbine grade silicon nitride component manufacturers, preliminary development of both alumina, and YTRIA based environmental barrier coatings (EBC's) and testing or ceramic vanes with an EBC coating.

  1. Atomic-resolution scanning transmission electron microscopy through 50-nm-thick silicon nitride membranes

    SciTech Connect

    Ramachandra, Ranjan; Jonge, Niels de; Demers, Hendrix

    2011-02-28

    Silicon nitride membranes can be used for windows of environmental chambers for in situ electron microscopy. We report that aberration corrected scanning transmission electron microscopy (STEM) achieved atomic resolution on gold nanoparticles placed on both sides of a 50-nm-thick silicon nitride membrane at 200 keV electron beam energy. Spatial frequencies of 1/1.2 A were visible for a beam semi-angle of 26.5 mrad. Imaging though a 100-nm-thick membrane was also tested. The achieved imaging contrast was evaluated using Monte Carlo simulations of the STEM imaging of a sample of with a representative geometry and composition.

  2. Hot isostatic pressing of silicon nitride Sisub3n4 containing zircon, or zirconia and silica

    NASA Technical Reports Server (NTRS)

    Somiya, S.; Yoshimura, M.; Suzuki, T.; Nishimura, H.

    1980-01-01

    A hydrothermal synthesis apparatus with a 10 KB cylinder was used to obtain a sintered body of silicon nitride. The sintering auxiliary agents used were zircon (ZrSiO4) and a mixture of zirconia (ZrO2) and silica (SiO2). Experiments were conducted with the amounts of ZrSi04 or ArO2 and SiO2 varying over a wide range and the results compared to discover the quantity of additive which produced sintering in silicon nitride by the hot pressing method.

  3. Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide.

    PubMed

    Liu, Xing; Pu, Minhao; Zhou, Binbin; Krückel, Clemens J; Fülöp, Attila; Torres-Company, Victor; Bache, Morten

    2016-06-15

    We experimentally show octave-spanning supercontinuum generation in a nonstoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping the pump in the telecom band. PMID:27304272

  4. Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide

    NASA Astrophysics Data System (ADS)

    Liu, Xing; Pu, Minhao; Zhou, Binbin; Krückel, Clemens J.; Fülöp, Attila; Torres-Company, Victor; Bache, Morten

    2016-06-01

    We experimentally show octave-spanning supercontinuum generation in a non-stoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping the pump in the telecom band.

  5. Fabrication and characterization of on-chip silicon nitride microdisk integrated with colloidal quantum dots.

    PubMed

    Xie, Weiqiang; Zhu, Yunpeng; Aubert, Tangi; Hens, Zeger; Brainis, Edouard; Van Thourhout, Dries

    2016-01-25

    We designed and fabricated free-standing, waveguide-coupled silicon nitride microdisks hybridly integrated with embedded colloidal quantum dots. An efficient coupling of quantum dot emission to resonant disk modes and eventually to the access waveguides is demonstrated. The amount of light coupled out to the access waveguide can be tuned by controlling its dimensions and offset with the disk edge. These devices open up new opportunities for both on-chip silicon nitride integrated photonics and novel optoelectronic devices with quantum dots. PMID:26832565

  6. Alternative substrates for gallium nitride epitaxy and devices: Laterally overgrown gallium nitride and silicon(111)

    NASA Astrophysics Data System (ADS)

    Marchand, Hugues

    Gallium nitride films grown on sapphire or silicon carbide using the conventional 'two-step' technique typically exhibit threading dislocations on the order of ˜109 cm-2, which are detrimental to device performance. In addition, sapphire and silicon carbide substrates are expensive and available only in limited size (2-3 inch diameter). This work addresses both issues by evaluating the properties of GaN films synthesized by lateral epitaxial overgrowth (LEO) and conventional growth on sapphire and Si(111) substrates. LEO consists of partially masking a previously-grown seed layer and performing a subsequent regrowth such that the regrown features extend over the masked areas. Under favorable conditions the threading dislocations originating from the seed material are blocked by the mask material or redirected by the growing facets. In this work dislocation densities as low as ˜106 cm-2 were observed in the laterally-overgrown areas. The overgrown features exhibited well-defined facets ((0001), {11¯01}, {112¯0}, {112¯1}, {112¯2}), the persistence of which depended on the orientation of the mask as well as on the growth conditions. The relationship between the morphology of the LEO stripes and the growth conditions (temperature, pressure, ammonia and trimethylgallium partial pressures) was characterized for LEO on GaN/sapphire substrates. A qualitative model of the growth mechanisms was presented based on the microscopic structure of the growing surfaces. Microstructural characterization revealed a crystallographic tilt between the seed and the LEO region, which resulted in the formation of dislocations above the mask edge and at the junction plane of adjacent stripes. GaN stripes laterally overgrown on AlN/Si(111) exhibited similar properties. However, chemical interactions between the substrate and the precursors caused morphological degradation, which could be avoided by using a thick (≥180 nm) AlN buffer layer. In addition, thermal expansion mismatch

  7. First-principles investigation of band offsets and dielectric properties of Silicon-Silicon Nitride interfaces

    NASA Astrophysics Data System (ADS)

    Pham, Tuan Anh; Li, Tianshu; Gygi, Francois; Galli, Giulia

    2011-03-01

    Silicon Nitride (Si3N4) is a possible candidate material to replace or be alloyed with SiO2 to form high-K dielectric films on Si substrates, so as to help prevent leakage currents in modern CMOS transistors. Building on our previous work on dielectric properties of crystalline and amorphous Si3N4 slabs, we present an analysis of the band offsets and dielectric properties of crystalline-Si/amorphous Si3N4 interfaces based on first principles calculations. We discuss shortcomings of the conventional bulk-plus line up approach in band offset calculations for systems with an amorphous component, and we present the results of band offsets obtained from calculations of local density of states. Finally, we describe the role of bonding configurations in determining band edges and dielectric constants at the interface. We acknowledge financial support from Intel Corporation.

  8. Identification of nitriding mechanisms in high purity reaction bonded silicon nitride

    SciTech Connect

    Haggerty, J.S.

    1993-03-01

    The rapid, low-temperature nitriding results from surface effects on the Si particles beginning with loss of chemisorbed H and sequential formation of thin amorphous Si nitride layers. Rapid complete conversion to Si{sub 3}N{sub 4} during the fast reaction can be inhibited when either too few or too many nuclei form on Si particels. Optimally, {approximately} 10 Si{sub 3}N{sub 4} nuclei form per Si particles under rapid, complete nitridation conditions. Nitridation during the slow reaction period appears to progress by both continued reaction of nonpreferred Si{sub 3}N{sub 4} growth interfaces and direct nitridation of the remaining Si/vapor interfaces.

  9. Identification of nitriding mechanisms in high purity reaction bonded silicon nitride

    SciTech Connect

    Haggerty, J.S.

    1993-03-01

    The rapid, low-temperature nitriding results from surface effects on the Si particles beginning with loss of chemisorbed H and sequential formation of thin amorphous Si nitride layers. Rapid complete conversion to Si[sub 3]N[sub 4] during the fast reaction can be inhibited when either too few or too many nuclei form on Si particels. Optimally, [approximately] 10 Si[sub 3]N[sub 4] nuclei form per Si particles under rapid, complete nitridation conditions. Nitridation during the slow reaction period appears to progress by both continued reaction of nonpreferred Si[sub 3]N[sub 4] growth interfaces and direct nitridation of the remaining Si/vapor interfaces.

  10. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    NASA Technical Reports Server (NTRS)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  11. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    SciTech Connect

    Wan, Yimao Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  12. Flux stabilization of silicon nitride microsieves by backpulsing and surface modification with PEG moieties.

    PubMed

    Gironès, M; Bolhuis-Versteeg, L A M; Lammertink, R G H; Wessling, M

    2006-07-15

    The influence of the surface properties of chemically modified silicon nitride microsieves on the filtration of protein solutions and defatted milk is described in this research. Prior to membrane filtrations, an antifouling polymer based on poly(ethylene glycol), poly(TMSMA-r-PEGMA) was synthesized and applied on silicon-based surfaces like silicon, silicon nitride, and glass. The ability of such coating to repel proteins like bovine serum albumin (BSA) was confirmed by ellipsometry and confocal fluorescence microscopy. In BSA and skimmed milk filtrations no differences could be seen between unmodified and PEG-coated membranes (decreasing permeability in time). On the other hand, reduced fouling was observed with PEG-modified microsieves in combination with backpulsing and air sparging. PMID:16603173

  13. Effect of composition on the processing and properties of sintered reaction-bonded silicon nitride

    SciTech Connect

    Tiegs, T.N.; Kiggans, J.O.; Montgomery, F.C.; Lin, H.T.; Barker, D.L.; Snodgrass, J.D.; Sabolsky, E.M.; Coffey, D.W.

    1996-04-01

    The type of silicon powder and sintering additive were found to influence the processing and final mechanical properties of sintered reaction bonded silicon nitride. High purity silicon powders produced low {alpha}-Si{sub 3}N{sub 4} content during nitridation. The Si powder type had no apparent effect on densification. More complete nitridation and higher room temperature mechanical properties were observed for the Si powders with higher Fe contents. However, the higher Fe contents resulted in greater high temperature strength degradation and so there was better high temperature strength retention with the higher purity Si. High {alpha}-Si{sub 3}N{sub 4} contents were found after nitridation with {alpha}-Si{sub 3}N{sub 4} seeded materials and with MgO-Y{sub 2}O{sub 3} as the sintering additive. Densification was inhibited by refractory additives, such as Y{sub 2}O{sub 3}-SiO{sub 2}. The highest room temperature strength and fracture toughness values correlated to high nitrided {alpha}-Si{sub 3}N{sub 4} contents. The high temperature strength behavior was similar for all additive types.

  14. Dislocation emission at the Silicon/Silicon nitride interface: A million atom molecular dynamics simulation on parallel computers

    PubMed

    Bachlechner; Omeltchenko; Nakano; Kalia; Vashishta; Ebbsjo; Madhukar

    2000-01-10

    Mechanical behavior of the Si(111)/Si(3)N4(0001) interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the interface. The crack does not propagate into the silicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the (1; 1;1) plane of the silicon substrate with a speed of 500 (+/-100) m/s. Time evolution of the dislocation emission and nature of defects is studied. PMID:11015901

  15. Sol-gel preparation of low oxygen content, high surface area silicon nitride and imidonitride materials.

    PubMed

    Sardar, Kripasindhu; Bounds, Richard; Carravetta, Marina; Cutts, Geoffrey; Hargreaves, Justin S J; Hector, Andrew L; Hriljac, Joseph A; Levason, William; Wilson, Felix

    2016-04-01

    Reactions of Si(NHMe)4 with ammonia are effectively catalysed by small ammonium triflate concentrations, and can be used to produce free-standing silicon imide gels. Firing at various temperatures produces amorphous or partially crystallised silicon imidonitride/nitride samples with high surface areas and low oxygen contents. The crystalline phase is entirely α-Si3N4 and structural similarities are observed between the amorphous and crystallised materials. PMID:26931152

  16. Cavity Optomechanics with High-Stress Silicon Nitride Films

    NASA Astrophysics Data System (ADS)

    Wilson, Dalziel Joseph

    There has been a barrage of interest in recent years to marry the fields of nanomechanics and quantum optics. Mechanical systems provide sensitive and scalable architectures for sensing applications ranging from atomic force microscopy to gravity wave interferometry. Optical resonators driven by low noise lasers provide a quiet and well-understood means to read-out and manipulate mechanical motion, by way of the radiation pressure force. Taken to an extreme, a device consisting of a high-Q nanomechanical oscillator coupled to a high-finesse optical cavity may enable ground-state preparation of the mechanical element, thus paving the way for a new class of quantum technology based on chip-scale phononic devices coupled to optical photons. By way of mutual coupling to the optical field, this architecture may enable coupling of single phonons to real or artificial atoms, an enticing prospect because of the vast "quantum optics toolbox" already developed for cavity quantum electrodynamics. The first step towards these goals --- ground-state cooling of the mechanical element in a "cavity optomechanical" system --- has very recently been realized in a cryogenic setup. The work presented in this thesis describes an effort to extend this capability to a room temperature apparatus, so that the usual panoply of table-top optical/atomic physics tools can be brought to bear. This requires a mechanical oscillator with exceptionally low dissipation, as well as careful attention to extraneous sources of noise in both the optical and mechanical componentry. Our particular system is based on a high- Q, high-stress silicon nitride membrane coupled to a high-finesse Fabry-Perot cavity. The purpose of this thesis is to record in detail the procedure for characterizing/modeling the physical properties of the membrane resonator, the optical cavity, and their mutual interaction, as well as extraneous sources of noise related to multimode thermal motion of the oscillator, thermal motion

  17. TOPICAL REVIEW: Textured silicon nitride: processing and anisotropic properties

    NASA Astrophysics Data System (ADS)

    Zhu, Xinwen; Sakka, Yoshio

    2008-07-01

    Textured silicon nitride (Si3N4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si3N4, with emphasis on the anisotropic and abnormal grain growth of β-Si3N4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for β-Si3N4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the texturing mechanisms and the factors affecting texture development. Also, methods of synthesizing the rodlike β-Si3N4 single crystals are presented. Various anisotropic properties of textured Si3 N4 and their origins are thoroughly described and discussed, such as hardness, elastic modulus, bending strength, fracture toughness, fracture energy, creep behavior, tribological and wear behavior, erosion behavior, contact damage behavior and thermal conductivity. Models are analyzed to determine the thermal anisotropy by considering the intrinsic thermal anisotropy, degree of orientation and various microstructure factors. Textured porous Si3N4 with a unique microstructure composed of oriented elongated β-Si3N4 and anisotropic pores is also described for the first time, with emphasis on its unique mechanical and thermal-mechanical properties. Moreover, as an important related material, textured α-Sialon is also reviewed, because the presence of elongated α-Sialon grains allows the production of textured α-Sialon using the

  18. Surface modification of silicon dioxide, silicon nitride and titanium oxynitride for lactate dehydrogenase immobilization.

    PubMed

    Saengdee, Pawasuth; Chaisriratanakul, Woraphan; Bunjongpru, Win; Sripumkhai, Witsaroot; Srisuwan, Awirut; Jeamsaksiri, Wutthinan; Hruanun, Charndet; Poyai, Amporn; Promptmas, Chamras

    2015-05-15

    Three different types of surface, silicon dioxide (SiO2), silicon nitride (Si3N4), and titanium oxynitride (TiON) were modified for lactate dehydrogenase (LDH) immobilization using (3-aminopropyl)triethoxysilane (APTES) to obtain an amino layer on each surface. The APTES modified surfaces can directly react with LDH via physical attachment. LDH can be chemically immobilized on those surfaces after incorporation with glutaraldehyde (GA) to obtain aldehyde layers of APTES-GA modified surfaces. The wetting properties, chemical bonding composition, and morphology of the modified surface were determined by contact angle (CA) measurement, Fourier transform infrared (FTIR) spectroscopy, and scanning electron microscopy (SEM), respectively. In this experiment, the immobilized protein content and LDH activity on each modified surface was used as an indicator of surface modification achievement. The results revealed that both the APTES and APTES-GA treatments successfully link the LDH molecule to those surfaces while retaining its activity. All types of tested surfaces modified with APTES-GA gave better LDH immobilizing efficiency than APTES, especially the SiO2 surface. In addition, the SiO2 surface offered the highest LDH immobilization among tested surfaces, with both APTES and APTES-GA modification. However, TiON and Si3N4 surfaces could be used as alternative candidate materials in the preparation of ion-sensitive field-effect transistor (ISFET) based biosensors, including lactate sensors using immobilized LDH on the ISFET surface. PMID:25108848

  19. High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

    NASA Technical Reports Server (NTRS)

    Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

  20. Nano-structure and tribological properties of B + and Ti + co-implanted silicon nitride

    NASA Astrophysics Data System (ADS)

    Nakamura, Naoki; Noda, Katsutoshi; Yamauchi, Yukihiko

    2005-01-01

    Silicon nitride ceramics have been co-implanted with boron and titanium ions at a fluence of 2 × 1017 ions/cm2 and an energy of 200 keV. TEM results indicated that the boron and titanium-implanted layers were amorphized separately and titanium nitride nano-crystallites were formed in the titanium-implanted layer. XPS results indicated that the implantation profile varied a little depending on the ion implantation sequence of boron and titanium ions, with the boron implantation peak shifting to a shallower position when implanted after Ti+-implantation. Wear tests of these ion-implanted materials were carried out using a block-on-ring wear tester under non-lubricated conditions against commercially available silicon nitride materials. The specific wear rate was reduced by ion implantation and showed that the specific wear rate of Ti+-implanted sample was the lowest, followed by B+, Ti+ co-implanted and B+-implanted samples.

  1. Experimental Analysis of the Elastic Plastic Transition During Nanoindentation of Single Crystal a-Silicon Nitride

    SciTech Connect

    Jang, Jae-il; Bei, Hongbin; Becher, Paul F; Pharr, George M

    2012-01-01

    The elastic-to-plastic transition in single crystal a-silicon nitride was experimentally characterized through a series of nanoindentation experiments using a spherical indenter. The experimental results provide a quantitative description of the critical shear strengths for the transition, as well as estimates of the shear modulus and nanohardness of the material.

  2. Effect of attrition milling on the reaction sintering of silicon nitride

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.; Glasgow, T. K.; Yeh, H. C.

    1978-01-01

    Silicon powder was ground in a steel attrition mill under nitrogen. Air exposed powder was compacted, prefired in helium, and reaction sintered in nitrogen-4 v/o hydrogen. For longer grinding times, oxygen content, surface area and compactability of the powder increased; and both alpha/beta ratio and degreee of nitridation during sintering increased. Iron content remained constant.

  3. Evaluation and silicon nitride internal combustion engine components. Final report, Phase I

    SciTech Connect

    Voldrich, W.

    1992-04-01

    The feasibility of silicon nitride (Si{sub 3}N{sub 4}) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components` gas-pressure sinterable Si{sub 3}N{sub 4} (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si{sub 3}N{sub 4} components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  4. Effect of attrition milling on the reaction sintering of silicon nitride

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.; Glasgow, T. K.; Yeh, H. C.

    1978-01-01

    Silicon powder was ground in a steel attrition mill under nitrogen. Air-exposed powder was compacted, prefired in helium, and reaction-sintered in nitrogen-4 v/o hydrogen. For longer grinding times, oxygen content, surface area and compactability of the powder increased; and both alpha/beta ratio and degree of nitridation during sintering increased. Iron content remained constant.

  5. Improved mechanical long-term reliability of hip resurfacing prostheses by using silicon nitride.

    PubMed

    Zhang, Wen; Titze, M; Cappi, B; Wirtz, D C; Telle, R; Fischer, H

    2010-11-01

    Although ceramic prostheses have been successfully used in conventional total hip arthroplasty (THA) for many decades, ceramic materials have not yet been applied for hip resurfacing (HR) surgeries. The objective of this study is to investigate the mechanical reliability of silicon nitride as a new ceramic material in HR prostheses. A finite element analysis (FEA) was performed to study the effects of two different designs of prostheses on the stress distribution in the femur-neck area. A metallic (cobalt-chromium-alloy) Birmingham hip resurfacing (BHR) prosthesis and our newly designed ceramic (silicon nitride) HR prosthesis were hereby compared. The stresses induced by physiologically loading the femur bone with an implant were calculated and compared with the corresponding stresses for the healthy, intact femur bone. Here, we found stress distributions in the femur bone with the implanted silicon nitride HR prosthesis which were similar to those of healthy, intact femur bone. The lifetime predictions showed that silicon nitride is indeed mechanically reliable and, thus, is ideal for HR prostheses. Moreover, we conclude that the FEA and corresponded post-processing can help us to evaluate a new ceramic material and a specific new implant design with respect to the mechanical reliability before clinical application. PMID:20725769

  6. Study of phenomena related to the sintering process of silicon nitride at atmospheric pressure

    NASA Technical Reports Server (NTRS)

    Bertani, A.

    1982-01-01

    A procedure was perfected for the production of components used in engineering applications of silicon nitride. Particles of complex geometry that combine remarkable mechanical properties with a high density are obtained. The process developed, in contrast to the "hot pressing" method, does not use external pressures, and in contrast to the reaction bonding method, final densities close to the theoretical value are obtained.

  7. Optomechanical and crystallization phenomena visualized with 4D electron microscopy: interfacial carbon nanotubes on silicon nitride.

    PubMed

    Flannigan, David J; Zewail, Ahmed H

    2010-05-12

    With ultrafast electron microscopy (UEM), we report observation of the nanoscopic crystallization of amorphous silicon nitride, and the ultrashort optomechanical motion of the crystalline silicon nitride at the interface of an adhering carbon nanotube network. The in situ static crystallization of the silicon nitride occurs only in the presence of an adhering nanotube network, thus indicating their mediating role in reaching temperatures close to 1000 degrees C when exposed to a train of laser pulses. Under such condition, 4D visualization of the optomechanical motion of the specimen was followed by quantifying the change in diffraction contrast of crystalline silicon nitride, to which the nanotube network is bonded. The direction of the motion was established from a tilt series correlating the change in displacement with both the tilt angle and the response time. Correlation of nanoscopic motion with the picosecond atomic-scale dynamics suggests that electronic processes initiated in the nanotubes are responsible for the initial ultrafast optomechanical motion. The time scales accessible to UEM are 12 orders of magnitude shorter than those traditionally used to study the optomechanical motion of carbon nanotube networks, thus allowing for distinctions between the different electronic and thermal mechanisms to be made. PMID:20377202

  8. Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

    NASA Technical Reports Server (NTRS)

    Baumgartner, H. R.

    1978-01-01

    Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

  9. Surface Strength of Silicon Nitride in Relation to Rolling Contact Performance

    SciTech Connect

    Wang, Wei; Hadfield, M.; Wereszczak, Andrew A

    2009-01-01

    Silicon nitride material has been traditionally used as bearing material due to its superior performance against bearing steel. Its successful application as a bearing element has led to the development of rolling contact applications in turbomachinery and automotive industries. In the case of latter, this is especially true for the engine manufacturing industry where its excellent rolling contact performance can make significant savings on warranty cost for engine manufactures. In spite of these advantages, the remaining limitation for their broader application is the high component machining cost. Further understanding of rolling contact performance of silicon nitride in relation to its surface integrity will enable engine manufacturers to produce components that meet the design requirements while at the same time reduce the machining cost. In the present study, the relationship between the C-sphere strength of a silicon nitride and its rolling contact fatigue life is investigated. The C-sphere test is used here to compare the strengths of three batches of sintered reaction-bonded silicon nitride (SRBSN) specimens with different subsurface quality induced by variation of machining parameters. In parallel, the rolling contact fatigue (RCF) performance of those machining conditions is studied on a modified four-ball tester. The results show that the most aggressively machined specimens have the weakest C-sphere strength and the shortest RCF life. This positive relationship can give component manufacturers a valuable reference when they make selections of candidate material and finishing standards.

  10. Processing development for ceramic structural components: the influence of a presintering of silicon on the final properties of reaction bonded silicon nitride. Final technical report

    SciTech Connect

    Not Available

    1982-03-01

    The influence of a presintering of silicon on the final properties of reaction bonded silicon nitride has been studied using scanning electron and optical microscopy, x-ray diffraction analysis, 4 pt. bend test, and mecury intrusion porosimetry. It has been shown that presintering at 1050/sup 0/C will not affect the final nitrided properties. At 1200/sup 0/C, the oxide layer is removed, promoting the formation of B-phase silicon nitride. Presintering at 1200/sup 0/C also results in compact weight loss due to the volatilization of silicon, and the formation of large pores which severely reduce nitrided strength. The development of the structure of sintered silicon compacts appears to involve a temperature gradient, with greater sintering observed near the surface.

  11. Processing development for ceramic structural components: the influence of a presentering of silicon on the final properties of reaction bonded silicon nitride. Final technical report

    SciTech Connect

    Not Available

    1982-03-01

    The influence of a presintering of silicon on the final properties of reaction bonded silicon nitride has been studied using scanning electron and optical microscopy, X-ray diffraction analysis, 4 pt. bend test, and mercury intrusion porosimetry. It has been shown that presintering at 1050/sup 0/C will not affect the final nitrided properties. At 1200/sup 0/C, the oxide layer is removed, promoting the formation of B-phase silicon nitride. Presintering at 1200/sup 0/C also results in compact weight loss due to the volatilization of silicon, and the formation of large pores which severely reduce nitrided strength. The development of the structure of sintered silicon compacts appears to involve a temperature gradient, with greater sintering observed near the surface.

  12. Experimental and theoretical evaluation of the laser-assisted machining of silicon nitride

    NASA Astrophysics Data System (ADS)

    Rozzi, Jay Christopher

    This study focused on the experimental and theoretical evaluation of the laser assisted machining (LAM) of silicon nitride ceramics. A laser assisted machining facility was constructed whose main components consist of a COsb2 laser and a CNC lathe. Surface temperature histories were first measured and compared to a transient, three-dimensional numerical simulation for a rotating silicon nitride workpiece heated by a translating laser for ranges of the workpiece rotational and laser-translation speeds, as well as the laser beam diameter and power. Excellent agreement was obtained between the experimental and predicted temperature histories. Laser assisted machining experiments on silicon nitride ceramic workpieces were completed for a wide range of operating conditions. Data for cutting forces and surface temperature histories illustrated that the lower bound for the avoidance of cutting tool and/or workpiece fracture for LAM is defined by the YSiAlON glass transition temperature (920-970sp°C). As temperatures near the cutting tool increase to values above the glass transition temperature range, the glassy phase softened, facilitating plastic deformation and, correspondingly, the production of semi-continuous or continuous chips. The silicon nitride machined workpiece surface roughness (Rsb{a}=0.39\\ mum) for LAM at the nominal operating condition was nearly equivalent to a value associated with the grinding of silicon nitride using a diamond wheel (Rsb{a}=0.2\\ mum). By examining the machined surfaces and chips, it was shown that LAM does not produce detectable sub-surface cracking or significant silicon nitride microstructure alteration, respectively. A transient, three-dimensional numerical heat transfer model of laser assisted machining was constructed, which includes a preheat phase and material removal, with the associated changes in the workplace geometry. Excellent agreement was obtained between the measured and predicted temperature histories. The strong

  13. Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

    SciTech Connect

    Wan, Yimao Bullock, James; Cuevas, Andres

    2015-05-18

    This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negative fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

  14. Analysis of the luminescent centers in silicon rich silicon nitride light-emitting capacitors

    NASA Astrophysics Data System (ADS)

    Cabañas-Tay, S. A.; Palacios-Huerta, L.; Luna-López, J. A.; Aceves-Mijares, M.; Alcántara-Iniesta, S.; Pérez-García, S. A.; Morales-Sánchez, A.

    2015-06-01

    An analysis of the luminescent center and its effect on the optical, electrical and electro-optical properties of silicon rich silicon nitride (SRN) films deposited by low pressure chemical vapor deposition is reported. As-deposited SRN films emit a broad photoluminescence (PL) spectrum in the visible range where the maximum peak shifts from ∼490 to ∼590 nm as the silicon excess increases. After thermal annealing, a PL blue-shift is observed and it is ascribed to a compositional-dependent change in the concentration of defect states within the films. A correlation between the PL peak energy with the optical band-gap indicates that the luminescence is related to the band tail carrier recombination in the SRN films. Light emitting capacitors (LECs) based on fluor-doped tin oxide SnO2:F (FTO)/SRN active layer/n-Si substrate emit a broad electroluminescent spectra where the maximum emission peak blue-shifts when the polarity is changed from reverse to forward bias. In the reverse bias, the electroluminescence (EL) is related to the states of valence band tail and Si dangling bonds (K0 centers), while in the forward bias the EL is originated from electronic transitions from the conduction band minimum to K0 centers. A model based on the trap assisted tunneling carrier transport is correlated with the proposed EL radiative recombination process in the FTO/SRN/n-Si structures. A discussion of the differences between the PL and EL spectra is reported. The results open new alternatives toward the development of Si-based light emitters where two different EL spectra can be obtained changing the polarity.

  15. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    PubMed

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5. PMID:27447839

  16. Bulk-Micromachined Optical Filter Based on Guided-Mode Resonance in Silicon-Nitride Membrane

    NASA Astrophysics Data System (ADS)

    Hsu, Che-Lung; Liu, Yung-Chih; Wang, Chih-Ming; Wu, Mount-Learn; Tsai, Ya-Lun; Chou, Yue-Hong; Lee, Chien-Chieh; Chang, Jenq-Yang

    2006-04-01

    In this paper, a single-layer guided-mode resonance (GMR) filter based on a free-standing silicon-nitride membrane suspended on a silicon substrate is achieved by using bulk-micromachining technology. Both of grating and waveguide structures without a lower-cladding layer, i.e., substrate, are fabricated simultaneously on a silicon-nitride membrane. The device can be used as a transmission bandstop filter with the advantages of simple structure, high efficiency, and feasibility to integrate with other optoelectronic elements into a microsystem chip. The design consideration, fabrication procedures, and measured spectral response are shown in this paper. Moreover, by stacking two proposed devices, Δλ of the stopband at a transmission below 10% is 5.06 nm.

  17. Aluminum nitride-silicon carbide whisker composites: Processing, properties, and microstructural stability

    SciTech Connect

    Cross, M.T.

    1990-01-01

    Aluminum nitride -- silicon carbide whisker composites with up to 20 vol % whiskers were fabricated by pressureless sintering (1750{degree}--1800{degree}C) and by hot-pressing (1700{degree}--1800{degree}C). Silicon carbide whiskers were found to degrade depending on the type of protective powder bed used during sintering. Whiskers were found to degraded in high oxygen containing samples by reaction with sintering additives. Whisker degradation was also due to the formation of silicon carbide -- aluminum nitride solid solution. No whisker degradation was observed in hot-pressed samples. For these samples Young's modulus and fracture toughness were measured. A 33% increase in the fracture toughness was measured by the indentation technique for a 20 vol % whisker composite. Operative toughening mechanisms were investigated using scanning electron microscopy. Crack deflection and whisker bridging were the dominant mechanisms. It was also shown that load transfer from matrix to whiskers can be a contributing factor to toughening. 88 refs., 34 figs., 11 tabs.

  18. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

    SciTech Connect

    Ramírez, J. M. Berencén, Y.; Garrido, B.; Cueff, S.; Labbé, C.

    2014-08-28

    Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.

  19. Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

    NASA Astrophysics Data System (ADS)

    Zeng, Y.; Roland, I.; Checoury, X.; Han, Z.; El Kurdi, M.; Sauvage, S.; Gayral, B.; Brimont, C.; Guillet, T.; Mexis, M.; Semond, F.; Boucaud, P.

    2015-02-01

    We demonstrate second harmonic generation in a gallium nitride photonic crystal cavity embedded in a two-dimensional free-standing photonic crystal platform on silicon. The photonic crystal nanocavity is optically pumped with a continuous-wave laser at telecom wavelengths in the transparency window of the nitride material. The harmonic generation is evidenced by the spectral range of the emitted signal, the quadratic power dependence vs. input power, and the spectral dependence of second harmonic signal. The harmonic emission pattern is correlated to the harmonic polarization generated by the second-order nonlinear susceptibilities χzxx (2 ), χzyy (2 ) and the electric fields of the fundamental cavity mode.

  20. Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

    NASA Astrophysics Data System (ADS)

    Roland, I.; Zeng, Y.; Han, Z.; Checoury, X.; Blin, C.; El Kurdi, M.; Ghrib, A.; Sauvage, S.; Gayral, B.; Brimont, C.; Guillet, T.; Semond, F.; Boucaud, P.

    2014-07-01

    We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ˜7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

  1. Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

    SciTech Connect

    Roland, I.; Zeng, Y.; Han, Z.; Checoury, X.; Blin, C.; El Kurdi, M.; Ghrib, A.; Sauvage, S.; Boucaud, P.; Gayral, B.; Brimont, C.; Guillet, T.; Semond, F.

    2014-07-07

    We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ∼7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

  2. Phonon characteristics and photoluminescence of bamboo structured silicon-doped boron nitride multiwall nanotubes

    NASA Astrophysics Data System (ADS)

    Xu, Shifeng; Fan, Yi; Luo, Jingsong; Zhang, Ligong; Wang, Wenquan; Yao, Bin; An, Linan

    2007-01-01

    Bamboo structured silicon-doped boron nitride multiwall nanotubes are synthesized via catalyst-assisted pyrolysis of a boron-containing polymeric precursor. The nanotubes are characterized using transmission electron microscopy, x-ray diffraction, Raman, and Fourier-transformed infrared spectroscope. The results suggest that the Si dopants cause significant changes in the structure and phonon characteristics of the nanotubes as compared to pure boron nitride nanotubes. A broad photoluminescence band ranging between 500 and 800nm is observed from the nanotubes, which is attributed to Si dopants. Study on temperature dependence of emission intensity suggests that the thermal activation energy of the nonradiative recombination process is 35meV.

  3. Microstructural characterization of silicon nitride ceramics processed by pressureless sintering, overpressure sintering, and sinter/HIP

    SciTech Connect

    Selkregg, K.R. ); More, K.L.; Seshadri, S.G.; McMurtry, C.H. )

    1990-01-01

    Silicon nitride ceramics of the same nominal sialon composition have been sintered under different conditions including atmospheric sintering, overpressure sintering, reaction bonded (nitrided pressureless sinter) and sinter/HIP cycles. The sintered ceramics, which exhibited dramatic differences in fracture toughness, have been characterized by x-ray diffraction, scanning electron microscopy, analytical transmission electron microscopy, and image analysis techniques. Fracture toughness data have been correlated to the microstructural and chemical analysis of the grain boundary phases. The microstructure was the strongest influencing factor on the observed fracture toughness difference. 5 refs., 5 tabs.

  4. Assesment of Alkali Resistance of Basalt Used as Concrete Aggregates

    NASA Astrophysics Data System (ADS)

    al-Swaidani, Aref M.; Baddoura, Mohammad K.; Aliyan, Samira D.; Choeb, Walid

    2015-11-01

    The objective of this paper is to report a part of an ongoing research on the influence of using crushed basalt as aggregates on one of durability-related properties of concrete (i.e. alkali-silica reaction which is the most common form of Alkali-Aggregate Reaction). Alkali resistance has been assessed through several methods specified in the American Standards. Results of petrographic examination, chemical test (ASTM C289) and accelerated mortar bar test (ASTM C1260) have particularly been reported. In addition, the weight change and compressive strength of 28 days cured concrete containing basaltic aggregates were also reported after 90 days of exposure to 10% NaOH solution. Dolomite aggregate were used in the latter test for comparison. The experimental results revealed that basaltic rocks quarried from As-Swaida'a region were suitable for production of aggregates for concrete. According to the test results, the studied basalt aggregates can be classified as innocuous with regard to alkali-silica reaction. Further, the 10% sodium hydroxide attack did not affect the compressive strength of concrete.

  5. Rolling-element fatigue life of silicon nitride balls. [as compared to that of steel, ceramic, and cermet materials

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1974-01-01

    The five-ball fatigue tester was used to evaluate silicon nitride as a rolling-element bearing material. Results indicate that hot-pressed silicon nitride running against steel may be expected to yield fatigue lives comparable to or greater than those of bearing quality steel running against steel at stress levels typical rolling-element bearing application. The fatigue life of hot-pressed silicon nitride is considerably greater than that of any ceramic or cermet tested. Computer analysis indicates that there is no improvement in the lives of 120-mm-bore angular--contact ball bearings of the same geometry operating at DN values from 2 to 4 million where hot-pressed silicon nitride balls are used in place of steel balls.

  6. Foreign Object Damage Behavior of Two Gas-turbine Grade Silicon Nitrides by Steel Ball Projectiles at Ambient Temperature

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

    2002-01-01

    Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through strength testing of flexure test specimens impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 220 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). Additionally, the FOD response of an equiaxed, fine-grained silicon nitride (NC132) was also investigated to provide further insight. The NC132 silicon nitride exhibited the lowest fracture toughness of the three materials tested, providing further evidence that K(sub IC) is a key material parameter affecting FOD resistance. The observed damage generated by projectile impact was typically in the forms of well- or ill-developed ring or cone cracks with little presence of radial cracks.

  7. Substitution of ceramics for high temperature alloys. [advantages of using silicon carbides and silicon nitrides in gas turbine engines

    NASA Technical Reports Server (NTRS)

    Probst, H. B.

    1978-01-01

    The high temperature capability of ceramics such as silicon nitride and silicon carbide can result in turbine engines of improved efficiency. Other advantages when compared to the nickel and cobalt alloys in current use are raw material availability, lower weight, erosion/corrosion resistance, and potentially lower cost. The use of ceramics in three different sizes of gas turbine is considered; these are the large utility turbines, advanced aircraft turbines, and small automotive turbines. Special consideration, unique to each of these applications, arise when one considers substituting ceramics for high temperature alloys. The effects of material substitutions are reviewed in terms of engine performance, operating economy, and secondary effects.

  8. Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

    SciTech Connect

    Rezgui, B.; Sibai, A.; Nychyporuk, T.; Lemiti, M.; Bremond, G.; Maestre, D.; Palais, O.

    2010-05-03

    The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN{sub x}) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.

  9. Preparation and evaluation of silicon nitride matrices for silicon nitride-SiC fiber composites. M.S. Thesis Final Technical Report

    NASA Technical Reports Server (NTRS)

    Axelson, Scott R.

    1988-01-01

    Continuous silicon carbide (SiC) fiber was added to three types of silicon nitride (Si3N4) matrices. Efforts were aimed at producing a dense Si3N4 matrix from reaction-bonded silicon nitride (RBSN) by hot-isostatic-pressing (HIP) and pressureless sintering, and from Si3N4 powder by hot-pressing. The sintering additives utilized were chosen to allow for densification, while not causing severe degradation of the fiber. The ceramic microstructures were evaluated using scanning optical microscopy. Vickers indentation was used to determine the microhardness and fracture toughness values of the matrices. The RBSN matrices in this study did not reach more than 80 percent of theoretical density after sintering at various temperatures, pressures, and additive levels. Hot-pressing Si3N4 powder produced the highest density matrices; hardness and toughness values were within an order of magnitude of the best literature values. The best sintering aid composition chosen included Y2O3, SiO2, and Al2O3 or AlN. Photomicrographs demonstrate a significant reduction of fiber attack by this additive composition.

  10. A study of vapor-phase deposition of silicon nitride layers by ammonolysis of dichlorosilane at lowered pressure

    SciTech Connect

    Manzha, N. M.

    2010-12-15

    Deposition kinetics of silicon nitride layers at lowered reactor pressures of 10-130 Pa and temperatures in the range 973-1073 K has been studied. The equilibrium constant of the bimolecular reaction of dichlorosilane with ammonia has been calculated. The apparent activation energies calculated taking into account the experimental growth rate nearly coincide with the experimental data. Recommendations for improving the quality of silicon nitride layers are made.

  11. Kinetic study of the oxide-assisted catalyst-free synthesis of silicon nitride nanowires

    NASA Astrophysics Data System (ADS)

    Farjas, J.; Pinyol, A.; Rath, Chandana; Roura, P.; Bertran, E.

    2006-05-01

    The synthesis of Si3N4 nanowires from the reaction of silicon nanoparticles with N2 in the 1200-1440 °C temperature range is reported. The nitridation conditions are such that the reaction with nitrogen is favoured by the presence of silicon oxide in the particles and by the active oxidation of silicon without a catalyst. It is shown that the Si to Si3N4 conversion rate depends on the amount of silicon particles used in the experiments and that, in general, the reaction slows down for greater amounts. This trend is explained by particle stacking, which restricts the exchange of gases between the furnace atmosphere and the atmosphere around the inner particles. In a first stage, local oxygen partial pressure increases around the inner particles and inhibits nitridation locally. If the amount of reactant Si nanoparticles is small enough, this extrinsic effect is avoided and the intrinsic nitridation kinetics can be measured. Experiments show that intrinsic kinetics does not depend on temperature.

  12. Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

    PubMed

    Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

    2015-10-01

    In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)). PMID:26480096

  13. Kinetic study on the direct nitridation of silicon powders diluted with α-Si3N4 at normal pressure

    NASA Astrophysics Data System (ADS)

    Yin, Shao-wu; Wang, Li; Tong, Li-ge; Yang, Fu-ming; Li, Yan-hui

    2013-05-01

    Silicon nitride (Si3N4) powders were prepared by the direct nitridation of silicon powders diluted with α-Si3N4 at normal pressure. Silicon powders of 2.2 μm in average diameter were used as the raw materials. The nitriding temperature was from 1623 to 1823 K, and the reaction time ranged from 0 to 20 min. The phase compositions and morphologies of the products were analyzed by X-ray diffraction and scanning electron microscopy, respectively. The effects of nitriding temperature and reaction time on the conversion rate of silicon were determined. Based on the shrinking core model as well as the relationship between the conversion rate of silicon and the reaction time at different temperatures, a simple model was derived to describe the reaction between silicon and nitrogen. The model revealed an asymptotic exponential trend of the silicon conversion rate with time. Three kinetic parameters of silicon nitridation at atmospheric pressure were calculated, including the pre-exponential factor (2.27 cm·s-1) in the Arrhenius equation, activation energy (114 kJ·mol-1), and effective diffusion coefficient (6.2×10-8 cm2·s-1). A formula was also derived to calculate the reaction rate constant.

  14. Electron trap level of hydrogen incorporated nitrogen vacancies in silicon nitride

    SciTech Connect

    Sonoda, Ken'ichiro Tsukuda, Eiji; Tanizawa, Motoaki; Yamaguchi, Yasuo

    2015-03-14

    Hydrogen incorporation into nitrogen vacancies in silicon nitride and its effects on electron trap level are analyzed using simulation based on density functional theory with temperature- and pressure-dependent hydrogen chemical potential. If the silicon dangling bonds around a nitrogen vacancy are well separated each other, hydrogen incorporation is energetically stable up to 900 °C, which is in agreement with the experimentally observed desorption temperature. On the other hand, if the dangling bonds strongly interact, the incorporation is energetically unfavorable even at room temperature because of steric hindrance. An electron trap level caused by a nitrogen vacancy becomes shallow by the hydrogen incorporation. An electron is trapped in a deep level created by a silicon dangling bond before hydrogen incorporation, whereas it is trapped in a shallow level created by an anti-bonding state of a silicon-silicon bond after hydrogen incorporation. The simulation results qualitatively explain the experiment, in which reduced hydrogen content in silicon nitride shows superior charge retention characteristics.

  15. Microstructure, toughness and flexural strength of self-reinforced silicon nitride ceramics doped with yttrium oxide and ytterbium oxide.

    PubMed

    Zheng, Y. S.; Knowles, K. M.; Vieira, J. M.; Lopes, A. B.; Oliveira, F. J.

    2001-02-01

    Self-reinforced silicon nitride ceramics with additions of either yttrium oxide or ytterbium oxide have been investigated at room temperature after various processing heat treatments. Devitrification of the intergranular phase in these materials is very sensitive to the heat treatment used during processing and does not necessarily improve their strength and toughness. Hot-pressed ceramics without a subsequent devitrification heat treatment were the strongest. The ytterbium oxide-doped silicon nitride ceramics were consistently tougher, but less strong, than the yttrium oxide-doped silicon nitride ceramics. In all the ceramics examined, the fracture toughness showed evidence for R-curve behaviour. This was most significant in pressureless sintered ytterbium oxide-doped silicon nitride ceramics. A number of toughening mechanisms, including crack deflection, bridging, and fibre-like grain pull-out, were observed during microstructural analysis of the ceramics. In common with other silicon nitride-based ceramics, thin amorphous films were found at the grain boundaries in each of the ceramics examined. Arrays of dislocations left in the elongated silicon nitride grains after processing were found to belong to the {101;0}<0001> primary slip system. PMID:11207926

  16. Formation of Novel Silicon Nitride with Face-Centered Cubic Crystal Structure in a TaN/Ta/Si(100) Thin Film System

    NASA Astrophysics Data System (ADS)

    Cheng, Wei-Chun; Jou, Shyan-Kay; Chiu, Chuei-Fu

    2005-07-01

    We discovered a new silicon nitride with cubic symmetry formed in the silicon at the Ta/Si interface of the TaN/Ta/Si(100) thin film system when the silicon wafer was annealed at 500 or 600°C. The cubic silicon nitride grew into the silicon crystal in the shape of an inverse pyramid after the annealing process. The boundary planes of the inverse pyramid were the \\{111\\} planes of the silicon crystal. The orientation relationship between the silicon nitride and silicon crystal is cubic to cubic. The lattice constant of the new silicon nitride is a=0.5548 nm and is about 2.2% larger than that of the silicon crystal.

  17. Structure analysis of aluminium silicon manganese nitride precipitates formed in grain-oriented electrical steels

    SciTech Connect

    Bernier, Nicolas; Xhoffer, Chris; Van De Putte, Tom; Galceran, Montserrat; Godet, Stéphane

    2013-12-15

    We report a detailed structural and chemical characterisation of aluminium silicon manganese nitrides that act as grain growth inhibitors in industrially processed grain-oriented (GO) electrical steels. The compounds are characterised using energy dispersive X-ray spectrometry (EDX) and energy filtered transmission electron microscopy (EFTEM), while their crystal structures are analysed using X-ray diffraction (XRD) and TEM in electron diffraction (ED), dark-field, high-resolution and automated crystallographic orientation mapping (ACOM) modes. The chemical bonding character is determined using electron energy loss spectroscopy (EELS). Despite the wide variation in composition, all the precipitates exhibit a hexagonal close-packed (h.c.p.) crystal structure and lattice parameters of aluminium nitride. The EDX measurement of ∼ 900 stoichiometrically different precipitates indicates intermediate structures between pure aluminium nitride and pure silicon manganese nitride, with a constant Si/Mn atomic ratio of ∼ 4. It is demonstrated that aluminium and silicon are interchangeably precipitated with the same local arrangement, while both Mn{sup 2+} and Mn{sup 3+} are incorporated in the h.c.p. silicon nitride interstitial sites. The oxidation of the silicon manganese nitrides most likely originates from the incorporation of oxygen during the decarburisation annealing process, thus creating extended planar defects such as stacking faults and inversion domain boundaries. The chemical composition of the inhibitors may be written as (AlN){sub x}(SiMn{sub 0.25}N{sub y}O{sub z}){sub 1−x} with x ranging from 0 to 1. - Highlights: • We study the structure of (Al,Si,Mn)N inhibitors in grain oriented electrical steels. • Inhibitors have the hexagonal close-packed symmetry with lattice parameters of AlN. • Inhibitors are intermediate structures between pure AlN and (Si,Mn)N with Si/Mn ∼ 4. • Al and Si share the same local arrangement; Mn is incorporated in both Mn

  18. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    NASA Astrophysics Data System (ADS)

    Mutch, Michael J.; Lenahan, Patrick M.; King, Sean W.

    2016-08-01

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  19. Approaching intrinsic performance in ultra-thin silicon nitride drum resonators

    NASA Astrophysics Data System (ADS)

    Adiga, V. P.; Ilic, B.; Barton, R. A.; Wilson-Rae, I.; Craighead, H. G.; Parpia, J. M.

    2012-09-01

    We have fabricated circular silicon nitride drums of varying diameter (20 μm to 1 mm) and thickness (15 nm-75 nm) using electron beam lithography and measured the dissipation (Q-1) of these amorphous silicon nitride resonators using optical interferometric detection. We observe that the dissipation is strongly dependent on mode type for relatively large, thick membranes as predicted by the current models of dissipation due to clamping loss. However, this dependence is drastically reduced for smaller or thinner resonators, with thinner resonators showing higher quality factors, for low order modes. Highest quality factors that can be reached for these thin resonators seems be limited by an intrinsic mechanism and scales linearly with the diameter of the membrane. Our results are promising for mass sensing and optomechanical applications where low mass and high Qs are desirable.

  20. Surface toughness of silicon nitride bioceramics: I, Raman spectroscopy-assisted micromechanics.

    PubMed

    Pezzotti, Giuseppe; Enomoto, Yuto; Zhu, Wenliang; Boffelli, Marco; Marin, Elia; McEntire, Bryan J

    2016-02-01

    Indentation micro-fracture is revisited as a tool for evaluating the surface toughness of silicon nitride (Si3N4) bioceramics for artificial joint applications. Despite being unique and practical from an experimental perspective, a quantitative assessment of surface fracture toughness using this method is challenging. An improved method has been developed, consisting of coupling indentation with confocal (spatially resolved) Raman piezo-spectroscopy. Empowered by the Raman microprobe, the indentation micro-fracture method was found to be capable of providing reliable surface toughness measurements in silicon nitride biomaterials. In designing the microstructures of bioceramic bearing couples for improved tribological performance, surface toughness must be considered as a fundamentally different and distinct parameter from bulk toughness. The coupling of indention crack opening displacements (COD) with local stress field assessments by spectroscopy paves the way to reliably compare the structural properties of bioceramics and to quantitatively monitor their evolution during environmental exposure. PMID:26522613

  1. Microstructural and physical properties of magnesium oxide-doped silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Sirota, V.; Lukianova, O.; Krasilnikov, V.; Selemenev, V.; Dokalov, V.

    Silicon nitride based ceramics with aluminum, yttrium and magnesium oxides were produced by cold isostatic pressing and free sintering. The phase composition of the starting MgO powder obtained by the novel technology has been studied. The effect of magnesium oxide content on the structure of the produced materials has been investigated. It was found, that obtained materials with 1 and 2 wt.% of magnesium oxide and without it have a typical β-silicon nitride structure with elongated grains. Ceramics with 5 wt.% magnesia has a duplex α/β-structure with elongated and equiaxed grains. Ceramics with 2 wt.% magnesium oxide has a maximum density of 2.91 g/cm3. The increases in magnesium oxide content upto 5% led to decrease in the shrinkage (from 16% to 12%) and density (from 2.88 to 2.37 g/cm3).

  2. Corrosion behavior of silicon nitride, magnesium oxide, and several metals in molten calcium chloride with chlorine

    SciTech Connect

    McLaughlin, D. . Research and Development Center); Sesions, C.E.; Marra, J.E. )

    1992-08-01

    In this paper corrosion studies are described in a molten calcium chloride environment sparged with chlorine gas at 850{degrees}C, both in the melt and in the gas phase above the salt, in support of efforts at Westinghouse Savannah River Company to develop more resistant materials of construction for molten salt processing of plutonium. Corrosion rates and electron microscope analyses are reported for Inconel alloys 601 and 617, tantalum, tungsten, magnesium oxide, and silicon nitride. Silicon nitride exhibited the greatest resistance, showing {lt}0.1 mg/cm{sup 2} {center dot} h loss in both melt and vapor None of the metallic coupons withstood the chlorine vapor environment, although Inconel indicated resistance immersed in the melt if protected from chlorine gas.

  3. Crack healing behavior of hot pressed silicon nitride due to oxidation

    NASA Technical Reports Server (NTRS)

    Choi, S. R.; Tikare, V.

    1992-01-01

    It is shown that limited oxidation of an MgO-containing, hot-pressed silicon nitride ceramic at 800 deg C and above results in increased strength due to crack healing. Slight oxidation of the surface produces enstatite and cristobalite which fills in cracks. More extensive oxidation leads to strength degradation due to the formation of new flaws by the evolution of N2 gas at the surface. The apparent fracture toughness also increased at 800 deg C and above due to oxidation. Bonds formed between the two surfaces of the crack during oxidation leads to a reduction in stress intensity at the crack tip, suggesting that valid high-temperature toughness values cannot be obtained in an air environment. The increase in strength due to crack healing by oxidation can be achieved without compromising the fatigue properties of the silicon nitride ceramic.

  4. Performance of Kerr bistable memory in silicon nitride microring and silica microtoroid

    NASA Astrophysics Data System (ADS)

    Yoshiki, Wataru; Tanabe, Takasumi

    2014-12-01

    We quantitatively analyze the performance of optical memories based on Kerr bistability in microcavites. We model a silicon nitride microring and a silica toroid microcavity, and examine the performances of these cavities in an actual situation where there is a thermo-optic effect. Numerical simulations based on coupled mode theory and the thermal diffusion equation reveal that an input power of 1.8 W is necessary to achieve a Kerr bistable memory in a silicon nitride microring, while that of only 1.7 mW is necessary in a silica toroid microcavity. This result shows that the use of silica toroid microcavity is advantageous when we want to demonstrate a Kerr bistable memory operation with a reasonably low input power. In addition, we quantitatively investigate the trade-off between the required input power and the response speed of the device.

  5. An evaluation of bearings operating in a cryogenic environment with silicon nitride rolling elements

    NASA Technical Reports Server (NTRS)

    Gibson, H. G.

    1991-01-01

    The bearings used in the space shuttle main engine (SSME) high pressure oxidizer turbopump (HPOTP) do not meet the expected life goals that were set for them. In an effort to improve their performance, many solutions are being studied. New bearing materials are being developed, better manufacturing techniques are being investigated, and improved cage materials for better lubrication are being tested. The focus is on the replacement of steel balls with ones made of silicon nitride in 57-mm HPOTP bearings. The bearings were then installed in a test rig and run at near turbopump operating conditions. The results from this test series are encouraging, with silicon nitride showing good wear resistance and thermal stability.

  6. Determination of attenuation lengths and electron escape depths in silicon nitride thin films

    SciTech Connect

    Honggang Hu; Carim, A.H. . Dept. of Materials Science and Engineering)

    1993-11-01

    Amorphous silicon nitride thin films prepared by low pressure chemical vapor deposition have been investigated by x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The attenuation lengths and escape depths of Si 2p photoelectrons with kinetic energy of 1,385 eV from silicon nitride thin films have been calculated. High resolution transmission electron microscopy (HRTEM) has been used to characterize the thin film thickness. The atomic density of Si in the films decreases with increasing film thickness, leading to a longer attenuation length for thicker films ([lambda][degree] [approx] 4.7 nm for films with thickness of t > 5 nm) than for thinner films ([lambda][degree] [approx] 3.6 nm, t < 4 nm). The attenuation length dependence on the film thickness and experimental setup also provides direct experimental evidence that the simple exponential model for electron attenuation may be inaccurate due to elastic scattering effects.

  7. Photoacoustic Evaluation of the Mechanical Properties of Aluminum / Silicon Nitride Double-Layer Thin Films

    NASA Astrophysics Data System (ADS)

    Zhang, Feifei; Krishnaswamy, Sridhar; Lilley, Carmen M.

    2006-03-01

    In this paper, we compare two photoacoustic techniques to characterize the mechanical parameters of edge-supported aluminum and silicon nitride double-layer thin films. In a first set of experiments, a femtosecond transient pump-probe technique is used to investigate the Young's moduli of the aluminum and silicon nitride layers by launching ultra-high frequency bulk acoustic waves in the films. In a second set of experiments, dispersion curves of the A0 mode of the Lamb waves that propagate along the unsupported films are measured using a broadband photoacoustic guided-wave method. The residual stresses and flexural rigidities for the same set of double-layer membranes are determined from these dispersion curves. Comparisons of the results obtained by the two photoacoustic techniques are made.

  8. Buckling Morphologies and Interfacial Properties of Silicon Nitride Films Deposited on Float Glass Substrates

    NASA Astrophysics Data System (ADS)

    Sun, Ya-Dong; Chen, Qi-Xiang; Feng, Yu-Fei; Chen, Jun; Yu, Sen-Jiang

    2015-04-01

    We report on the buckling morphologies and interfacial properties of silicon nitride films deposited on float glass substrates. The coexistence of straight-sided and telephone cord buckles can be observed in the silicon nitride films after annealing at a high temperature. The straight-sided structure is metastable and can spontaneously evolve into the telephone cord structure accompanied by the increase in the buckle width and height. The geometric parameters of various buckling structures (including the straight blister, telephone cord and their transition state) have been measured by optical microscopy and atomic force microscopy (AFM). The internal stress and interfacial adhesion of the films are evaluated and analyzed based on the continuum elastic theory. It is valid to measure the interfacial properties of thin films by simplifying the telephone cord buckle as a straight-sided structure. This measurement technique is suitable for all the film systems provided that the buckles can form in the film.

  9. Electrical characterization of rapid thermal nitrided and re-oxidized low-pressure chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Ang, S. S.; Shi, Y. J.; Brown, W. D.

    1996-02-01

    The electrical characteristics of rapid thermal nitrided and re-oxidized low-pressure chemical-vapor-deposited (LPCVD) silicon dioxide metal-oxide-silicon (MOS) structures were investigated. Both nitridation temperature and time affect the properties of the MOS structures as revealed by capacitance-voltage characteristics. Nitridation at 1000 °C for 15 s followed by re-oxidation for 60 s at 1000 °C in an oxygen/nitrogen ambient was found to be superior to the same nitridation for 60 s with no re-oxidation. Typical values of fixed charge and interface state densities for devices subjected to nitridation and re-oxidation in a mixture of oxygen and nitrogen were 4×1010 cm-2 and 7×1010 eV-1 cm-2, respectively. Avalanche electron injection using electric fields of 3-3.5 MV/cm produced positive shifts in flatband voltage for devices nitrided at 1000 °C for 15 s followed by re-oxidation, whereas samples nitrided at 1000 °C for 60 s without the re-oxidation yielded negative shifts in flatband voltage. An electron barrier height of 2.4 eV was found for these nitrided samples. These results strongly suggest that device quality MOS dielectrics for high-voltage power MOS field-effect-transistors can be realized by nitridation/re-oxidation of LPCVD oxide.

  10. Formation of porous surface layers in reaction bonded silicon nitride during processing

    NASA Technical Reports Server (NTRS)

    Shaw, N. J.; Glasgow, T. K.

    1979-01-01

    An effort was undertaken to determine if the formation of the generally observed layer of large porosity adjacent to the as-nitride surfaces of reaction bonded silicon nitrides could be prevented during processing. Isostatically pressed test bars were prepared from wet vibratory milled Si powder. Sintering and nitriding were each done under three different conditions:(1) bars directly exposed to the furnance atmosphere; (2) bars packed in Si powder; (3) bars packed in Si3N4 powder. Packing the bars in either Si of Si3N4 powder during sintering retarded formation of the layer of large porosity. Only packing the bars in Si prevented formation of the layer during nitridation. The strongest bars (316 MPa) were those sintered in Si and nitrided in Si3N4 despite their having a layer of large surface porosity; failure initiated at very large pores and inclusions. The alpha/beta ratio was found to be directly proportional to the oxygen content; a possible explanation for this relationship is discussed.

  11. Nitridation of silicon. M.S. Thesis Case Western Reserve Univ.

    NASA Technical Reports Server (NTRS)

    Shaw, N. J.

    1981-01-01

    Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

  12. An evaluation of indentation and finishing properties of bearing grade silicon nitrides

    SciTech Connect

    Dill, J.F.; Gardos, M.N.; Hardisty, R.G.

    1997-01-01

    This paper describes the results of studies of the machining performance and the indentation hardness and fracture toughness of different silicon nitride materials as part of an effort to better define the optimum machining conditions for bearing components. This work builds on prior efforts by two of the authors, Gardos and Hardisty (1993) who formulated a simple relationship between diamond grinding performance of silicon nitride bearing balls and a wear equation first detailed by Evans and Wilshaw (1976). The goal of this present work was to determine the general applicability of such a relationship, i.e., could simple indentation studies be used to define finishing conditions for different silicon nitride materials? The availability of such a simple test would reduce the time required for developing an acceptable process when a supplier changes his formulation, or when a new material becomes available. Quicker development of optimum finishing conditions would eventually result in a lower-cost product for users. The initial study by Gardos and Hardisty (1993) was based on limited data taken at a fixed set of conditions. This study expanded the range of conditions evaluated and the number of ceramic materials studied in an effort to define the universality of the relationship between grinding wear, hardness, and toughness. This study has shown that no simple relationship like that first envisioned by the authors exists. The results showed that the grinding wear of the individual silicon nitride materials increased at different rates as a function of load. Because of the differences found in the load dependence of grinding rates, no simple relationship between hardness, fracture toughness, and grinding rate could be found that fit the data over the range of conditions studied.

  13. Effect of hot isostatic pressing on reaction-bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Watson, G. K.; Moore, T. J.; Millard, M. L.

    1984-01-01

    Specimens of nearly theoretical density have been obtained through the isostatic hot pressing of reaction-bonded silicon nitride under 138 MPa of pressure for two hours at 1850, 1950, and 2050 C. An amorphous phase that is introduced by the hot isostatic pressing partly accounts for the fact that while room temperature flexural strength more than doubles, the 1200 C flexural strength increases significantly only after pressing at 2050 C.

  14. Thermal Shock Behavior of Silicon Nitride Flexure Beam Specimens with Indentation Cracks

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.

    1994-01-01

    The experimental results of thermal shock testing of silicon nitride flexure beam specimens containing indentation cracks are presented. The thermal stress induced by water quenching is much greater in the transverse direction than in the longitudinal direction, resulting in an insensitivity of residual bend strength to temperature differences up to 580 C. This result indicates that a flexure beam configuration is not an appropriate geometry for thermal shock testing when thermal shock behavior is to be evaluated from residual bend strength data.

  15. Density functional study on electronic properties of P-doped spinel silicon carbon nitride

    NASA Astrophysics Data System (ADS)

    Zhang, Yufen; Zhao, Xian; Cheng, Xiufeng; Mu, Yuguang

    2008-08-01

    We performed density functional calculations on the electronic properties of P-doped spinel silicon carbon nitride. When Si is replaced by C at the tetrahedral sites of P-doped c-Si 3N 4, the band gap can be adjusted, and an insulator-to-metal transition is predicted to occur at the C-to-Si ratio of 0.27. Finally, some possible examinations and potential applications for the large band-gap reduction are discussed.

  16. Strength evaluation test of pressureless-sintered silicon nitride at room temperature

    NASA Technical Reports Server (NTRS)

    Matsusue, K.; Takahara, K.; Hashimoto, R.

    1984-01-01

    In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

  17. Silicon nitride: A ceramic material with outstanding resistance to thermal shock and corrosion

    NASA Technical Reports Server (NTRS)

    Huebner, K. H.; Saure, F.

    1983-01-01

    The known physical, mechanical and chemical properties of reaction-sintered silicon nitride are summarized. This material deserves interest especially because of its unusually good resistance to thermal shock and corrosion at high temperatures. Two types are distinguished: reaction-sintered (porous) and hot-pressed (dense) Si3N4. Only the reaction-sintered material which is being produced today in large scale as crucibles, pipes, nozzles and tiles is considered.

  18. Mechanical behaviour and failure phenomenon of an in situ toughened silicon nitride

    NASA Technical Reports Server (NTRS)

    Salem, J. A.; Choi, S. R.; Freedman, M. R.; Jenkins, M. G.

    1992-01-01

    The Weibull modulus, fracture toughness and crack growth resistance of an in-situ toughened, silicon nitride material used to manufacture a turbine combustor were determined from room temperature to 1371 C. The material exhibited an elongated grain structure that resulted in improved fracture toughness, nonlinear crack growth resistance, and good elevated temperature strength. However, low temperature strength was limited by grains of excessive length (30 to 100 microns). These excessively long grains were surrounded by regions rich in sintering additives.

  19. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  20. Crystallization of the glassy phase of grain boundaries in silicon nitride

    NASA Technical Reports Server (NTRS)

    Jefferson, D. A.; Thomas, J. M.; Wen, S.

    1984-01-01

    Three types of hot-pressed silicon nitride specimens (containing 5wt% Y2O3 and 2wt% Al2O3 additives) which were subjected to different temperature heat treatments were studied by X-ray diffraction, X-ray microanalysis and high resolution electron microscopy. The results indicated that there were phase changes in the grain boundaries after heat treatment and the glassy phase at the grain boundaries was crystallized by heat treatment.

  1. Structural Analysis of a Magnetically Actuated Silicon Nitride Micro-Shutter for Space Applications

    NASA Technical Reports Server (NTRS)

    Loughlin, James P.; Fettig, Rainer K.; Moseley, S. Harvey; Kutyrev, Alexander S.; Mott, D. Brent; Obenschain, Arthur F. (Technical Monitor)

    2002-01-01

    Finite element models have been created to simulate the electrostatic and electromagnetic actuation of a 0.5 micrometers silicon nitride micro-shutter for use in a spacebased Multi-object Spectrometer (MOS). The microshutter uses a torsion hinge to go from the closed, 0 degree, position, to the open, 90 degree position. Stresses in the torsion hinge are determined with a large deformation nonlinear finite element model. The simulation results are compared to experimental measurements of fabricated micro-shutter devices.

  2. Correlated photon pair generation in low-loss double-stripe silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Zhang, Xiang; Zhang, Yanbing; Xiong, Chunle; Eggleton, Benjamin J.

    2016-07-01

    We demonstrate correlated photon pair generation via spontaneous four-wave mixing in a low-loss double-stripe silicon nitride waveguide with a coincidence-to-accidental ratio over 10. The coincidence-to-accidental ratio is limited by spontaneous Raman scattering, which can be mitigated by cooling in the future. This demonstration suggests that this waveguide structure is a potential platform to develop integrated quantum photonic chips for quantum information processing.

  3. Nanoindentation of silicon nitride: A multimillion-atom molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Walsh, Phillip; Omeltchenko, Andrey; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya; Saini, Subhash

    2003-01-01

    Nanoindentation of crystalline and amorphous silicon nitride films is studied using 10-million-atom molecular dynamics simulations. A rigid pyramid-shaped indenter tip is used. Load-displacement curves are computed and are used to derive hardness and elastic moduli of the simulated crystalline and amorphous films. Computer images of local pressure distributions and configuration snapshots show that plastic deformation in the film extends to regions far from the actual indent.

  4. Elevated Temperature Slow Crack Growth of Silicon Nitride Under Dynamic, Static and Cyclic Flexural Loading

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.; Nemeth, Noel; Gyekenyesi, John P.

    1994-01-01

    The slow crack growth parameters of a hot-pressed silicon nitride were determined at 1200 and 1300 C in air by statically, dynamically and cyclicly loading bend specimens. The fatigue parameters were estimated using the recently developed CARES/Life computer code. Good agreement exists between the flexural results. However, fatigue susceptibility under static uniaxial tensile loading, reported elsewhere, was greater than in flexure. Cyclic flexural loading resulted in the lowest apparent flexural fatigue susceptibility.

  5. SiAlON COATINGS OF SILICON NITRIDE AND SILICON CARBIDE

    SciTech Connect

    Jan W. Nowok; John P. Hurley; John P. Kay

    2000-06-01

    The need for new engineering materials in aerospace applications and in stationary power turbine blades for high-efficiency energy-generating equipment has led to a rapid development of ceramic coatings. They can be tailored to have superior physical (high specific strength and stiffness, enhanced high-temperature performance) and chemical (high-temperature corrosion resistance in more aggressive fuel environments) properties than those of monolithic ceramic materials. Among the major chemical properties of SiAlON-Y ceramics are their good corrosion resistance against aggressive media combined with good thermal shock behavior. The good corrosion resistance results from the yttria-alumina-garnet (YAG), Al{sub 5}Y{sub 3}O{sub 12}, formed during the corrosion process of SiAlON-Y ceramics in combustion gases at 1300 C. The interfacial chemical precipitation of the YAG phase is beneficial. This phase may crystallize in cubic and/or tetragonal modifications and if formed in SiAlON-Y ceramic may simultaneously generate residual stress. Also, this phase can contain a large number of point defects, which is a consequence of the large unit cell and complexity of the YAG structure because it has no close-packed oxygen planes. Therefore, the need exists to elucidate the corrosion mechanism of a multilayered barrier with respect to using SiAlON-YAG as a corrosion-protective coating. Stress corrosion cracking in the grain boundary of a silicon nitride (Si{sub 3}N{sub 4}) ceramic enriched in a glassy phase such as SiAlON can significantly affect its mechanical properties. It has been suggested that the increased resistance of the oxynitride glass to stress corrosion is related to the increased surface potential of the fracture surface created in the more durable and highly cross-linked oxynitride glass network structure. We expect that either increased or decreased surface potential of the intergranular glassy phase is brought about by changes in the residual stress of the Si

  6. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

    SciTech Connect

    Buss, R.J.

    1997-02-01

    A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

  7. High-temperature tensile properties of fiber reinforced reaction bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Jablonski, David A.; Bhatt, Ramakrishna T.

    1990-01-01

    Measurements of tensile properties of unidirectional silicon carbide fiber-reinforced reaction-bonded silicon nitride (SiC/RBSN) composite specimens were carried out in air at 25, 1300, and 1500 C, using a new testing technique and a specially designed gripping system that minimizes bending moment and assures that failure always occurred in the gage section. The material was found to display metallike stress-strain behavior at all temperatures tested, and a noncatastrophic failure beyond the matrix fracture. The tensile properties were found to be temperature dependent, with the values of the ultimate tensile strength decreasing with temperature, from 543 MPa at 25 C to 169 at 1500 C.

  8. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

    NASA Astrophysics Data System (ADS)

    Reboh, S.; Morin, P.; Hytch, M. J.; Houdellier, F.; Claverie, A.

    2013-10-01

    To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

  9. Properties of silicon carbide fiber-reinforced silicon nitride matrix composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.

    1988-01-01

    The mechanical properties of NASA Lewis developed SiC/RBSN composites and their thermal and environmental stability havd been studied. The composites consist of nearly 30 vol pct of aligned 142 micron diameter chemically vapor-deposited SiC fibers in a relatively porous silicon nitride matrix. In the as-fabricated condition, the unidirectional and 2-D composites exhibited metal-like stress-strain behavior, graceful failure, and showed improved properties when compared with unreinforced matrix of comparable density. Furthermore, the measured room temperature tensile properties were relativley independent of tested volume and were unaffected by artifical notches normal to the loading direction or by thermal shocking from temperatures up to 800 C. The four-point bend strength data measured as a function of temperature to 1400 C in air showed that as-fabricated strength was maintained to 1200 C. At 1400 C, however, nearly 15 pct loss in strength was observed. Measurement of room temperature tensile strength after 100 hr exposure at temperatures to 1400 C in a nitrogen environment indicated no loss from the as-fabricated composite strength. On the other hand, after 100 hr exposure in flowing oxygen at 1200 and 1400 C, the composites showed approximately 40 pct loss from their as-fabricated ultimate tensile strength. Those exposed between 400 to 1200 C showed nearly 60 pct strength loss. Oxidation of the fiber/matrix interface as well as internal oxidation of the porous Si3N4 matrix are likely mechanisms for strength degradation. The excellent strength reproducibility, notch insensitivity, and high temperature strength of the composite makes it an ideal candidate for advanced heat engine applications provided coating or densification methods are developed to avoid internal oxidation attack.

  10. Indentation and oxidation studies on silicon nitride joints

    SciTech Connect

    Gopal, M.; De Jonghe, L.C.; Thomas, G. |

    1996-05-01

    Si nitride ceramics have been joined with a Y oxide-SiO{sub 2} interlayer. A 1:2 molar ratio of Y{sub 2}O{sub 3} to SiO{sub 2} was chosen to obtain the desired Y{sub 2}Si{sub 2}O{sub 7} stoichiometry, which should give the interlayer better oxidation resistance compared to other interlayer materials. Mechanical characterization of the joints performed by indentation shows it to have good room temperature strength.

  11. Local environment of silicon in cubic boron nitride

    SciTech Connect

    Murata, Hidenobu Taniguchi, Takashi; Hishita, Shunichi; Yamamoto, Tomoyuki; Oba, Fumiyasu; Tanaka, Isao

    2013-12-21

    Si-doped cubic boron nitride (c-BN) is synthesized at high pressure and high temperature, and the local environment of Si is investigated using X-ray absorption near edge structure (XANES) and first-principles calculations. Si-K XANES indicates that Si in c-BN is surrounded by four nitrogen atoms. According to first-principles calculations, the model for substitutional Si at the B site well reproduces experimental Si-K XANES, and it is energetically more favorable than substitutional Si at the N site. Both the present experimental and theoretical results indicate that Si in c-BN prefers the B site to the N site.

  12. Electronic structure of silicon nitride according to ab initio quantum-chemical calculations and experimental data

    SciTech Connect

    Nekrashevich, S. S. Gritsenko, V. A.; Klauser, R.; Gwo, S.

    2010-10-15

    Charge transfer {Delta}Q = 0.35e at the Si-N bond in silicon nitride is determined experimentally using photoelectron spectroscopy, and the ionic formula of silicon nitride Si{sub 3}{sup +1.4}N{sub 4}{sup -1.05} is derived. The electronic structure of {alpha}-Si{sub 3}N{sub 4} is studied ab initio using the density functional method. The results of calculations (partial density of states) are compared with experimental data on X-ray emission spectroscopy of amorphous Si{sub 3}N{sub 4}. The electronic structure of the valence band of amorphous Si{sub 3}N{sub 4} is studied using synchrotron radiation at different excitation energies. The electron and hole effective masses m{sub e}{sup *} {approx} m{sub h}{sup *} {approx} 0.5m{sub e} are estimated theoretically. The calculated values correspond to experimental results on injection of electrons and holes into silicon nitride.

  13. Preparation of Silicon Nitride Multilayer Ceramic Radome Material and Optimal Design of the Wall Structure

    SciTech Connect

    Chen Fei; Shen Qiang; Zhang Lianmeng

    2008-02-15

    A study of silicon nitride ceramic radomes, which includes preparation of the material and optimal design of the radome wall structure, is presented in this paper. Multilayer radome wall structure with high dielectric constant skins and a low dielectric constant core layer is used for broadband application. As a candidate material for both the skins and core layer, silicon nitride ceramics of controlled dielectric constant in the range 3.0{approx}7.5 were prepared by adding different content of sintering aids such as magnesia, alumina, silica and zirconium phosphate binder and choosing suitable sintering methods. A computer aided design (CAD) for the wall structure of silicon nitride multilayer ceramic radome based on microwave equivalent network method is carried out according to design requirements. By optimizing the thickness of skins and core layer, the power transmission efficiency of such a multilayer Si{sub 3}N{sub 4} ceramic radome is calculated. The calculated results suggest that when the dielectric constant of skins lies in the range 6{approx}7.5 and core layer in the range 3.5{approx}4, the power transmission efficiency is above 85% with frequency of 2{approx}18 GHz while the thickness of skins is less than 0.03{lambda} and the thickness ratio of skins to core layer is less than 1:15.

  14. Foreign Object Damage of Two Gas-Turbine Grade Silicon Nitrides in a Thin Disk Configuration

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

    2003-01-01

    Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through post-impact strength testing for thin disks impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). The critical impact velocity in which the corresponding post-impact strength yielded the lowest value was V(sub c) approx. 440 and 300 m/s for AS800 and SN282, respectively. A unique lower-strength regime was typified for both silicon nitrides depending on impact velocity, attributed to significant radial cracking. The damages generated by projectile impact were typically in the forms of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike thick (3 mm) flexure bar specimens used in the previous studies, thin (2 mm) disk target specimens exhibited a unique backside radial cracking occurring on the reverse side just beneath the impact sites at and above impact velocity of 160 and 220 m/s for SN282 and AS800, respectively.

  15. Development of a Lightweight Thrust Chamber Assembly Utilizing In-Situ Reinforced Silicon Nitride

    NASA Astrophysics Data System (ADS)

    Elvander, J.; Wherley, B.; Claflin, S.

    1999-06-01

    The paper describes the status of the Light Weight Thrust Chamber Assembly (LWTCA) program currently underway at Boeing Rocketdyne Propulsion and Power, under contract with the US Air Force Research Laboratory. The goal of the program is to demonstrate technology which will lead to a 40% reduction in weight (including the nozzle), a 50% reduction in cost, a 75% reduction in part count and a 3% increase in specific impulse on a full scale, 400 klbf thrust LOX/hydrogen booster engine. The demonstration will be performed through the use of manufacturing technology demonstrator hardware and 60 klbf thrust hot-fire tests. The primary means to achieving these goals is by using in-situ reinforced silicon nitride for structural components. Silicon nitride is an advanced ceramic material that has high specific strength and fracture toughness, and can be cast to near- net part shape. Tests to validate the material properties of in-situ reinforced silicon nitride are discussed, along with the resulting changes to traditional thrust chamber design as a result of the improved properties. The progress towards manufacturing and hot-fire testing a thrust chamber assembly from the material is also described.

  16. Quantitative mapping of pore fraction variations in silicon nitride using an ultrasonic contact scan technique

    NASA Technical Reports Server (NTRS)

    Roth, Don J.; Kiser, James D.; Swickard, Suzanne M.; Szatmary, Steven A.; Kerwin, David P.

    1993-01-01

    An ultrasonic scan procedure using the pulse-echo contact configuration was employed to obtain maps of pore fraction variations in sintered silicon nitride samples in terms of ultrasonic material properties. Ultrasonic velocity, attenuation coefficient, and reflection coefficient images were obtained simultaneously over a broad band of frequencies (e.g., 30 to 110 MHz) by using spectroscopic analysis. Liquid and membrane (dry) coupling techniques and longitudinal and shear-wave energies were used. The major results include the following: Ultrasonic velocity (longitudinal and shear wave) images revealed and correlated with the extent of average through-thickness pore fraction variations in the silicon nitride disks. Attenuation coefficient images revealed pore fraction nonuniformity due to the scattering that occurred at boundaries between regions of high and low pore fraction. Velocity and attenuation coefficient images were each nearly identical for machined and polished disks, making the method readily applicable to machined materials. Velocity images were similar for wet and membrane coupling. Maps of apparent Poisson's ratio constructed from longitudinal and shear-wave velocities quantified Poisson's ratio variations across a silicon nitride disk. Thermal wave images of a disk indicated transient thermal behavior variations that correlated with observed variations in pore fraction and velocity and attenuation coefficients.

  17. Local bonding environment of plasma deposited nitrogen-rich silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Soh, Martin T. K.; Savvides, N.; Musca, Charles A.; Martyniuk, Mariusz P.; Faraone, Lorenzo

    2005-05-01

    Plasma deposited nitrogen-rich silicon nitride thin films were prepared at temperatures between 80 and 300 °C. The infrared transmission (400-4000cm-1) was measured, and selected absorption bands were quantified through a multiple Lorentzian oscillator parametric analysis. It is observed that the concentration of silicon-centered tetrahedra bonded together through nitrogen atoms increases monotonically with increasing deposition temperature. A qualitative model is presented to highlight the impact of the active adsorption site density on the degree of stepped (ordered) nucleation at the vapor-film interface. The importance of this growth profile, in particular for micro-systems-technology, is discussed in conjunction with measurements of the biaxial modulus and residual stress of the thin films. A mechanism for residual stress controllability is also presented. The atomic concentrations of silicon, nitrogen, and hydrogen in the thin films were calculated using infrared calibration factors derived from the deposition temperature dependent condensation processes. The results for silicon nitride thin films deposited at 300 °C were observed to be similar in composition to silicon diimide. Additional observations of the infrared transmission characteristics are reported, which include the identification of silazane bridge characteristics for the absorption feature around 610cm-1, which is typically associated with Si-H (bending) absorption.

  18. Atomic oxygen effects on boron nitride and silicon nitride: A comparison of ground based and space flight data

    NASA Technical Reports Server (NTRS)

    Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.

    1990-01-01

    The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) were evaluated in a low Earth orbit (LEO) flight experiment and in a ground based simulation facility. In both the inflight and ground based experiments, these materials were coated on thin (approx. 250A) silver films, and the electrical resistance of the silver was measured in situ to detect any penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the inflight and ground based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the inflight or ground based experiments. The ground based results show good qualitative correlation with the LEO flight results, indicating that ground based facilities such as the one at Los Alamos National Lab can reproduce space flight data from LEO.

  19. A comparison of ground-based and space flight data: Atomic oxygen reactions with boron nitride and silicon nitride

    NASA Technical Reports Server (NTRS)

    Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.; Koontz, S. L.

    1990-01-01

    The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) have been studied in low Earth orbit (LEO) flight experiments and in a ground-based simulation facility at Los Alamos National Laboratory. Both the in-flight and ground-based experiments employed the materials coated over thin (approx 250 Angstrom) silver films whose electrical resistance was measured in situ to detect penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the in-flight and ground-based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the in-flight or ground-based experiments. The ground-based results show good qualitative correlation with the LEO flight results, thus validating the simulation fidelity of the ground-based facility in terms of reproducing LEO flight results.

  20. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    PubMed Central

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

  1. Protein-repellent silicon nitride surfaces: UV-induced formation of oligoethylene oxide monolayers.

    PubMed

    Rosso, Michel; Nguyen, Ai T; de Jong, Ed; Baggerman, Jacob; Paulusse, Jos M J; Giesbers, Marcel; Fokkink, Remko G; Norde, Willem; Schroën, Karin; van Rijn, Cees J M; Zuilhof, Han

    2011-03-01

    The grafting of polymers and oligomers of ethylene oxide onto surfaces is widely used to prevent nonspecific adsorption of biological material on sensors and membrane surfaces. In this report, we show for the first time the robust covalent attachment of short oligoethylene oxide-terminated alkenes (CH(3)O(CH(2)CH(2)O)(3)(CH(2))(11)-(CH═CH(2)) [EO(3)] and CH(3)O(CH(2)CH(2)O)(6)(CH(2))(11)-(CH═CH(2)) [EO(6)]) from the reaction of alkenes onto silicon-rich silicon nitride surfaces at room temperature using UV light. Reflectometry is used to monitor in situ the nonspecific adsorption of bovine serum albumin (BSA) and fibrinogen (FIB) onto oligoethylene oxide coated silicon-rich silicon nitride surfaces (EO(n)-Si(x)N(4), x > 3) in comparison with plasma-oxidized silicon-rich silicon nitride surfaces (SiO(y)-Si(x)N(4)) and hexadecane-coated Si(x)N(4) surfaces (C(16)-Si(x)N(4)). A significant reduction in protein adsorption on EO(n)-Si(x)N(4) surfaces was achieved, adsorption onto EO(3)-Si(x)N(4) and EO(6)-Si(x)N(4) were 0.22 mg m(-2) and 0.08 mg m(-2), respectively. The performance of the obtained EO(3) and EO(6) layers is comparable to those of similar, highly protein-repellent monolayers formed on gold and silver surfaces. EO(6)-Si(x)N(4) surfaces prevented significantly the adsorption of BSA (0.08 mg m(-2)). Atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), X-ray reflectivity and static water contact angle measurements were employed to characterize the modified surfaces. In addition, the stability of EO(6)-Si(x)N(4) surfaces in phosphate-buffered saline solution (PBS) and alkaline condition (pH 10) was studied. Prolonged exposure of the surfaces to PBS solution for 1 week or alkaline condition for 2 h resulted in only minor degradation of the ethylene oxide moieties and no oxidation of the Si(x)N(4) substrates was observed. Highly stable antifouling coatings on Si(x)N(4) surfaces significantly broaden the application potential of silicon

  2. Devitrification and delayed crazing of SiO2 on single-crystal silicon and chemically vapor-deposited silicon nitride

    NASA Technical Reports Server (NTRS)

    Choi, Doo Jin; Scott, William D.

    1987-01-01

    The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor-deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order-of-magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long-term applications.

  3. Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Shinoda, Nao; Itokawa, Hiroshi; Fujitsuka, Ryota; Sekine, Katsuyuki; Onoue, Seiji; Tonotani, Junichi

    2016-04-01

    The behavior of nitrogen (N) atoms in plasma-nitrided silicon oxide (SiO2) formed by chemical vapor deposition (CVD) was characterized by physical analysis and from electrical properties. The changes in the chemical bonding and distribution of N in plasma-nitrided SiO2 were investigated for different subsequent processes. N-Si3, N-Si2O, and N2 are formed in a SiO2 film by plasma nitridation. N2 molecules diffuse out during annealing at temperatures higher than 900 °C. NH species are generated from N2 molecules and H in the SiO2 film with subsequent oxide deposition using O3 as an oxidant. The capacitance-voltage (C-V) curves of metal-oxide-semiconductor (MOS) capacitors are obtained. The negative shift of the C-V curve is caused by the increase in the density of positive fix charge traps in CVD-SiO2 induced by plasma nitridation. The C-V curve of plasma-nitrided SiO2 subjected to annealing shifts to the positive direction and that subjected to the subsequent oxide deposition shifts markedly to the negative direction. It is clarified that the density of positive charge fixed traps in plasma-nitrided SiO2 films decrease because the amount of N2 molecules is decreased by annealing, and that the density of traps increases because NH species are generated and move to the interface between SiO2 and the Si substrate with the subsequent oxide deposition.

  4. Feasibility of Actively Cooled Silicon Nitride Airfoil for Turbine Applications Demonstrated

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.

    2001-01-01

    Nickel-base superalloys currently limit gas turbine engine performance. Active cooling has extended the temperature range of service of nickel-base superalloys in current gas turbine engines, but the margin for further improvement appears modest. Therefore, significant advancements in materials technology are needed to raise turbine inlet temperatures above 2400 F to increase engine specific thrust and operating efficiency. Because of their low density and high-temperature strength and thermal conductivity, in situ toughened silicon nitride ceramics have received a great deal of attention for cooled structures. However, the high processing costs and low impact resistance of silicon nitride ceramics have proven to be major obstacles for widespread applications. Advanced rapid prototyping technology in combination with conventional gel casting and sintering can reduce high processing costs and may offer an affordable manufacturing approach. Researchers at the NASA Glenn Research Center, in cooperation with a local university and an aerospace company, are developing actively cooled and functionally graded ceramic structures. The objective of this program is to develop cost-effective manufacturing technology and experimental and analytical capabilities for environmentally stable, aerodynamically efficient, foreign-object-damage-resistant, in situ toughened silicon nitride turbine nozzle vanes, and to test these vanes under simulated engine conditions. Starting with computer aided design (CAD) files of an airfoil and a flat plate with internal cooling passages, the permanent and removable mold components for gel casting ceramic slips were made by stereolithography and Sanders machines, respectively. The gel-cast part was dried and sintered to final shape. Several in situ toughened silicon nitride generic airfoils with internal cooling passages have been fabricated. The uncoated and thermal barrier coated airfoils and flat plates were burner rig tested for 30 min without

  5. Molecular transport through nanoporous silicon nitride membranes produced from self-assembling block copolymers.

    PubMed

    Montagne, Franck; Blondiaux, Nicolas; Bojko, Alexandre; Pugin, Raphaël

    2012-09-28

    To achieve fast and selective molecular filtration, membrane materials must ideally exhibit a thin porous skin and a high density of pores with a narrow size distribution. Here, we report the fabrication of nanoporous silicon nitride membranes (NSiMs) at the full wafer scale using a versatile process combining block copolymer (BCP) self-assembly and conventional photolithography/etching techniques. In our method, self-assembled BCP micelles are used as templates for creating sub-100 nm nanopores in a thin low-stress silicon nitride layer, which is then released from the underlying silicon wafer by etching. The process yields 100 nm thick free-standing NSiMs of various lateral dimensions (up to a few mm(2)). We show that the membranes exhibit a high pore density, while still retaining excellent mechanical strength. Permeation experiments reveal that the molecular transport rate across NSiMs is up to 16-fold faster than that of commercial polymeric membranes. Moreover, using dextran molecules of various molecular weights, we also demonstrate that size-based separation can be achieved with a very good selectivity. These new silicon nanosieves offer a relevant technological alternative to commercially available ultra- and microfiltration membranes for conducting high resolution biomolecular separations at small scales. PMID:22899238

  6. Sintered Reaction Bonded Silicon Parts by Microwave Nitridation Combined with Gas-Pressure Sintering

    SciTech Connect

    Kiggans, J.O.; Mikijelj, B.; Tiegs, T.N.

    1999-01-01

    The cooperative project was a joint development program between Ceradyne and Oak Ridge National Laboratory through Lockheed Martin Energy Research (LMER). Cooperative work was of benefit to both parties. ORNL was able to assess the effect of the microwave nitridation process coupled with gas-pressure sintering for fabrication of parts for advanced diesel engines. Ceradyne gained access to gelcasting expertise and microwave facilities and experience for the nitridation of SRBSN materials. The broad objective of the CRADA between Ceradyne and OIWL was to (1) examine the applicability of the gelcasting technology to fabricate parts from SRBSN, and (2) to assess the effect of the microwave nitridation of silicon process coupled with gas-pressure sintering for fabrication of parts for advanced diesel engines. The following conclusions can be made from the work performed under the CRADA: (1) Gelcasting is a viable method to fabricate SRBSN parts using Ceradyne Si mixtures. However, the technique requires further development prior to being put into commercial use. (2) Microwave heating can be utilized to nitride multiple SRBSN parts. Scale-up of the process to fabricate several kilograms of material (up to 6 kg) per furnace run was demonstrated.

  7. Variations in pore structure of reaction-bonded silicon nitride /RBSN/

    NASA Technical Reports Server (NTRS)

    Danforth, S. C.; Richman, M. H.

    1979-01-01

    A discussion is presented relating the observed pore structures (sizes) to the reaction mechanisms in reaction-bonded silicon nitride (alpha- and beta-Si3N4) on the basis of information available from the literature. While the techniques for reducing the residual macroporosity are quite well-developed for reaction-bonded Si3N4 (RBSN), it is important to be aware of three other orders of magnitude for porosity present in RBSN as a result of the nitriding process itself, and how these types of nitridation-induced porosity can be controlled. For ease of description, these types of nitridation-induced porosity are called micropores, nanopores, and picopores in order of their decreasing size. A scanning electron micrograph is presented, showing nanopores isolated in the unreacted Si and picopores in the alpha-matte Si3N4. The assumption that an alpha-matte growth mechanism is active explains the occurrence of nanopores and their partial filling with alpha-Si3N4, leaving behind very fine-grained alpha-matte and picopores.

  8. Power mixture and green body for producing silicon nitride base articles of high fracture toughness and strength

    DOEpatents

    Huckabee, M.L.; Buljan, S.T.; Neil, J.T.

    1991-09-17

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength are disclosed. The powder mixture includes (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12m[sup 2]g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder. No Drawings

  9. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

    NASA Astrophysics Data System (ADS)

    Saseendran, Sandeep S.; Saravanan, S.; Raval, Mehul C.; Kottantharayil, Anil

    2016-03-01

    Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing thermally grown SiO2 films for surface passivation of crystalline silicon solar cells. In this work, we report the growth of silicon oxy-nitride (SiOxNy) film in N2O plasma ambient at 380 °C. However, this process results in trapping of interstitial oxygen within silicon. The impact of this trapped interstitial oxygen on the surface passivation quality is investigated. The interstitial oxygen trapped in silicon was seen to decrease for larger SiOxNy film thickness. Effective minority carrier lifetime (τeff) measurements on n-type float zone silicon wafers passivated by SiOxNy/silicon nitride (SiNv:H) stack showed a decrease in τeff from 347 μs to 68 μs, for larger SiOxNy film thickness due to degradation in interface properties. From high frequency capacitance-voltage measurements, it was concluded that the surface passivation quality was governed by the interface parameters (fixed charge density and interface state density). High temperature firing of the SiOxNy/SiNv:H stack resulted in a severe degradation in τeff due to migration of oxygen across the interface into silicon. However, on using the SiOxNy/SiNv:H stack for emitter surface passivation in screen printed p-type Si solar cells, an improvement in short wavelength response was observed in comparison to the passivation by SiNv:H alone, indicating an improvement in emitter surface passivation quality.

  10. Origin of rectification in boron nitride heterojunctions to silicon.

    PubMed

    Teii, Kungen; Hori, Takuro; Mizusako, Yusei; Matsumoto, Seiichiro

    2013-04-10

    Cubic and hexagonal boron nitride (cBN and hBN) heterojunctions to n-type Si are fabricated under low-energy ion bombardment by inductively coupled plasma-enhanced chemical vapor deposition using the chemistry of fluorine. The sp2-bonded BN/Si heterojunction shows no rectification, while the cBN/sp2BN/Si heterojunction has rectification properties analogue to typical p-n junction diodes despite a large thickness (∼130 nm) of the sp2BN interlayer. The current-voltage characteristics at temperatures up to 573 K are governed by thermal excitation of carriers, and mostly described with the ideal diode equation and the Frenkel-Poole emission model at low and high bias voltages, respectively. The rectification in the cBN/sp2BN/Si heterojunction is caused by a bias-dependent change in the barrier height for holes arising from stronger p-type conduction in the cBN layer and enhanced with the thick sp2BN interlayer for impeding the reverse current flow at defect levels mainly associated with grain boundaries. PMID:23521160

  11. Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

    SciTech Connect

    Zeng, Y.; Roland, I.; Checoury, X.; Han, Z.; El Kurdi, M.; Sauvage, S.; Boucaud, P.; Gayral, B.; Brimont, C.; Guillet, T.; Mexis, M.; Semond, F.

    2015-02-23

    We demonstrate second harmonic generation in a gallium nitride photonic crystal cavity embedded in a two-dimensional free-standing photonic crystal platform on silicon. The photonic crystal nanocavity is optically pumped with a continuous-wave laser at telecom wavelengths in the transparency window of the nitride material. The harmonic generation is evidenced by the spectral range of the emitted signal, the quadratic power dependence vs. input power, and the spectral dependence of second harmonic signal. The harmonic emission pattern is correlated to the harmonic polarization generated by the second-order nonlinear susceptibilities χ{sub zxx}{sup (2)}, χ{sub zyy}{sup (2)} and the electric fields of the fundamental cavity mode.

  12. Generic technological platform for microfabricating silicon nitride micro- and nanopipette arrays

    NASA Astrophysics Data System (ADS)

    Guenat, O. T.; Generelli, S.; Dadras, M.; Berdondini, L.; de Rooij, N. F.; Koudelka-Hep, M.

    2005-12-01

    In this paper, the design and the characterization of batch fabricated SixNy micropipette arrays with diameters ranging from 6 µm down to 250 nm are described. The process used to fabricate the micromachined pipettes includes a deep reactive ion etching step, followed by the deposition of two successive layers, a thermal oxide layer and a low stress, low pressure chemical vapor deposited silicon nitride layer, respectively. The diameter of the micropipettes could be modulated simply by choosing the thicknesses of the oxide sacrificial layer and of the nitride walls of the micropipettes. The reactive ion etching of the micropipette top layer in deep cavities and in confined and deconfined configurations is discussed. The mechanical resistance of the micropipette array was qualitatively tested and it was demonstrated that a force of 0.25 mN/micropipette could be applied without rupture of the micropipettes.

  13. Formation of porous surface layers in reaction bonded silicon nitride during processing

    NASA Technical Reports Server (NTRS)

    Shaw, N. J.; Glasgow, T. K.

    1979-01-01

    Microstructural examination of reaction bonded silicon nitride (RBSN) has shown that there is often a region adjacent to the as-nitrided surfaces that is even more porous than the interior of this already quite porous material. Because this layer of large porosity is considered detrimental to both the strength and oxidation resistance of RBSN, a study was undertaken to determine if its formation could be prevented during processing. All test bars studied were made from a single batch of Si powder which was milled for 4 hours in heptane in a vibratory mill using high density alumina cylinders as the grinding media. After air drying the powder, bars were compacted in a single acting die and hydropressed.

  14. Sublimation behavior of silicon nitride /Si3N4/ coated silicon germanium /SiGe/ unicouples. [for Radioisotope Thermoelectric Generators

    NASA Technical Reports Server (NTRS)

    Stapfer, G.; Truscello, V. C.

    1975-01-01

    For the Multi-Hundred Watt (MHW) Radioisotope Thermoelectric Generator (RTG), the silicon germanium unicouples are coated with silicon nitride to minimize degradation mechanisms which are directly attributable to material sublimation effects. A program is under way to determine the effective vapor suppression of this coating as a function of temperature and gas environment. The results of weight loss experiments, using Si3N4 coated hot shoes (SiMo), operating over a temperature range from 900 C to 1200 C, are analyzed and discussed. These experiments were conducted both in high vacuum and at different pressures of carbon monoxide (CO) to determine its effect on the coating. Although the results show a favorable vapor suppression at all operating temperatures, the pressure of the CO and the thickness of the coating have a decided effect on the useful lifetime of the coating.

  15. Polarization rotator based on augmented low-index-guiding waveguide on silicon nitride/silicon-on-insulator platform.

    PubMed

    Sun, X; Alam, M Z; Aitchison, J S; Mojahedi, M

    2016-07-15

    Using a newly proposed augmented low-index-guiding scheme with silicon nitride/silicon dual-core waveguide, we have designed, fabricated, and characterized a transverse electric (TE) to transverse magnetic (TM) and TM-to-TE compact polarization rotator. The polarization rotation is realized in an asymmetric directional coupler. The measured peak conversion efficiencies for the TE-to-TM and TM-to-TE rotations are approximately 97%. The measured polarization extinction ratio for the TE-to-TM rotation is greater than 20 dB over 50-nm bandwidth, while for the TM-to-TE rotation it is greater than 15 dB over the C-band. PMID:27420502

  16. Novel junctionless silicon-oxide-nitride-oxide-silicon memory devices with field-enhanced poly-Si nanowire structure

    NASA Astrophysics Data System (ADS)

    Chou, Chia-Hsin; Chan, Wei-Sheng; Wu, Chun-Yu; Lee, I.-Che; Liao, Ta-Chuan; Wang, Chao-Lung; Wang, Kuang-Yu; Cheng, Huang-Chung

    2015-08-01

    In this work, a novel gate-all-around (GAA) low-temperature poly-Si (LTPS) junctionless (JL) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory device with a field-enhanced nanowire (NW) structure has been proposed to improve the programing/erasing (P/E) performance. Each nanowire has three sharp corners fabricated by a sidewall spacer formation technique to obtain high local electrical fields. Owing to the higher carrier concentration in the channel and the high local electrical field from the three sharp corners, such a JL SONOS memory device exhibits a significantly enhanced P/E speed, a larger memory window, and better data retention properties than a conventional inversion mode NW-channel memory device.

  17. Fabricating capacitive micromachined ultrasonic transducers with a novel silicon-nitride-based wafer bonding process.

    PubMed

    Logan, Andrew; Yeow, John T W

    2009-05-01

    We report the fabrication and experimental testing of 1-D 23-element capacitive micromachined ultrasonic transducer (CMUT) arrays that have been fabricated using a novel wafer-bonding process whereby the membrane and the insulation layer are both silicon nitride. The membrane and cell cavities are deposited and patterned on separate wafers and fusion-bonded in a vacuum environment to create CMUT cells. A user-grown silicon-nitride membrane layer avoids the need for expensive silicon-on-insulator (SOI) wafers, reduces parasitic capacitance, and reduces dielectric charging. It allows more freedom in selecting the membrane thickness while also providing the benefits of wafer-bonding fabrication such as excellent fill factor, ease of vacuum sealing, and a simplified fabrication process when compared with the more standard sacrificial release process. The devices fabricated have a cell diameter of 22 microm, a membrane thickness of 400 nm, a gap depth of 150 nm, and an insulation thickness of 250 nm. The resonant frequency of the CMUT in air is 17 MHz and has an attenuation compensated center frequency of approximately 9 MHz in immersion with a -6 dB fractional bandwidth of 123%. This paper presents the fabrication process and some characterization results. PMID:19473926

  18. Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

    SciTech Connect

    Walmsley, B.A.; Liu, Y.; Hu, X.Z.; Bush, M.B.; Winchester, K.J.; Martyniuk, M.; Dell, J.M.; Faraone, L.

    2005-08-15

    This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process.

  19. Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Walmsley, B. A.; Liu, Y.; Hu, X. Z.; Bush, M. B.; Winchester, K. J.; Martyniuk, M.; Dell, J. M.; Faraone, L.

    2005-08-01

    This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process.

  20. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1988-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  1. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1989-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  2. Hard carbon nitride and method for preparing same

    DOEpatents

    Haller, Eugene E.; Cohen, Marvin L.; Hansen, William L.

    1992-01-01

    Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

  3. The development of a porous silicon nitride crossflow filter; Final report, September 1988--September 1992

    SciTech Connect

    1992-09-01

    This report summarizes the work performed in developing a permeable form of silicon nitride for application to ceramic crossflow filters for use in advanced coal-fired electric power plants. The program was sponsored by the Department of Energy Morgantown Energy Technology Center and consisted of a design analysis and material development phase and a filter manufacture and demonstration phase. The crossflow filter design and operating requirements were defined. A filter design meeting the requirements was developed and thermal and stress analyses were performed. Material development efforts focused initially on reaction-bonded silicon nitride material. This approach was not successful, and the materials effort was refocused on the development of a permeable form of sintered silicon nitride (SSN). This effort was successful. The SSN material was used for the second phase of the program, filter manufacture and evaluation. Four half-scale SAN filter modules were fabricated. Three of the modules were qualified for filter performance tests. Tests were performed on two of the three qualified modules in the High-Temperature, High-Pressure facility at the Westinghouse Science and Technology Center. The first module failed on test when it expanded into the clamping device, causing dust leakage through the filter. The second module performed well for a cumulative 150-hr test. It displayed excellent filtration capability during the test. The blowback pulse cleaning was highly effective, and the module apparently withstood the stresses induced by the periodic pulse cleaning. Testing of the module resumed, and when the flow of combustion gas through the filter was doubled, cracks developed and the test was concluded.

  4. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

    NASA Astrophysics Data System (ADS)

    Barrett, R. C.; Quate, C. F.

    1991-09-01

    In this paper we describe a variant of the scanning capacitance microscope (SCaM) which is based on the atomic force microscope. Our SCaM involves a cantilever beam that is used to press a conducting tip against a conducting substrate coated with a dielectric film. A capacitance sensor is then used to measure the tip-sample capacitance as a function of lateral position. The deflection of the cantilever can also be used to measure independently the surface topography. This microscope can be used to measure electrical properties of dielectric films and their underlying substrates. We have applied this microscope to the study of the nitride-oxide-silicon (NOS) system. This system has been studied extensively because of its ability to store information by trapping charge in the silicon nitride. Commercial semiconductor nonvolatile memories have been designed using this NOS technology. We have used the SCaM tip to apply a localized bias to the NOS sample, causing charge to tunnel through the oxide layer and to be trapped in the nitride film. This trapped charge induces a depletion region in the silicon substrate, which can be detected by the resulting depletion capacitance between the tip and sample. The stored charge can be interpreted as a digital memory. Bit sizes as small as 750 Å full width at half maximum have been stored using this technique. The stored charge has been observed to be stable over a period of seven days. The stored charge can be removed by applying a reverse bias to the region, and the bit can be subsequently rewritten. By simultaneously measuring capacitance and topography images, we have demonstrated that the stored information is not the result of any topographic change to the surface. Simulations of the potential distributions resulting from this trapped charge have been performed and are compared with the experiments. Finally, a discussion is presented on the ultimate density and speed limits of such a storage technology.

  5. Joining silicon nitride to FA-129 iron aluminide

    NASA Astrophysics Data System (ADS)

    Brochu, Mathieu

    inserted to absorb residual stresses. The maximum joint strength reached was 160 MPa. (VIII) Partial Transient Liquid Phase Bonding was successfully applied to the Si3N4/FA-129 system using a nickel interlayer. The conventional silicide and nitride layers were not observed as the silicide layer dissolved into the nickel core at high temperature. The strength of the assembly was measured and a strength of 80 MPa was obtained, independent of the joining parameters. (Abstract shortened by UMI.)

  6. Estimation of crack closure stresses for in situ toughened silicon nitride with 8 wt pct scandia

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.; Sanders, William A.

    1992-01-01

    An 8-wt pct-scandia silicon nitride with an elongated grain structure was fabricated. The material exhibited high fracture toughness and a rising R-curve as measured by the indentation strength technique. The 'toughening' exponent m was found to be m about 0.1. The high fracture toughness and R-curve behavior was attributed mainly to bridging of the crack faces by the elongated grains. The crack closure (bridging) stress distribution in the wake region of the crack tip was estimated as a function of crack size from the R-curve data, with an arbitrarily assumed distribution function.

  7. Control of interface fracture in silicon nitride ceramics: influence of different rare earth elements

    SciTech Connect

    Sun, E.Y.; Becher, P.F.; Waters, S.B.; Hsueh, Chun-Hway; Plucknett, K.P.; Hoffmann, M.J.

    1996-10-01

    The toughness of self-reinforced silicon nitride ceramics is improved by enhancing crack deflection and crack bridging mechanisms. Both mechanisms rely on the interfacial debonding process between the elongated {Beta}-Si{sub 3}N{sub 4} grains and the intergranular amorphous phases. The various sintering additives used for densification may influence the interfacial debonding process by modifying the thermal and mechanical properties of the intergranular glasses, which will result in different residual thermal expansion mismatch stresses; and the atomic bonding structure across the {Beta}-Si{sub 3}N{sub 4} glass interface. Earlier studies indicated that self-reinforced silicon nitrides sintered with different rare earth additives and/or different Y{sub 2}O{sub 3}:AI{sub 2}0{sub 3} ratios could exhibit different fracture behavior that varied from intergranular to transgranular fracture. No studies have been conducted to investigate the influence of sintering additives on the interfacial fracture in silicon nitride ceramics. Because of the complexity of the material system and the extremely small scale, it is difficult to conduct quantitative analyses on the chemistry and stress states of the intergranular glass phases and to relate the results to the bulk properties. The influence of different sintering additives on the interfacial fracture behavior is assessed using model systems in which {Beta}-Si{sub 3}N{sub 4}whiskers are embedded in SIAIRE (RE: rare-earth) oxynitride glasses. By systematically varying the glass composition, the role of various rare-earth additives on interfacial fracture has been examined. Specifically, four different additives were investigated: Al{sub 2}0{sub 3}, Y{sub 2}0{sub 3}, La{sub 2}O{sub 3}, and Yb{sub 2}O{sub 3}. In addition, applying the results from the model systems, the R- curve behavior of self-reinforced silicon nitride ceramics sintered with different Y{sub 2}0{sub 3}:AI{sub 2}0{sub 3} ratios was characterized.

  8. Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride

    NASA Astrophysics Data System (ADS)

    Ogino, Masaaki; Sugahara, Yoshiyuki; Kuribayashi, Hitoshi; Yamabe, Kikuo

    2004-03-01

    The effects of plasma-enhanced chemical vapor deposition (PE-CVD) silicon nitride (p-SiN) passivation films on time dependent dielectric breakdown (TDDB) of gate oxide were studied. It was found that degradation of TDDB characteristics with p-SiN films was suppressed by the change in p-SiN deposition conditions. The correlation between trapped electron density and TDDB characteristics varied, depending on the p-SiN films. The degradation of TDDB characteristics was also enhanced with phosphosilicate glass (PSG) under the p-SiN passivation film.

  9. Ammonia formation caused by the presence of water in the wet grinding of silicon nitride powder

    NASA Technical Reports Server (NTRS)

    Kanno, Y.; Suzuki, K.; Kuwahara, Y.

    1984-01-01

    Si3 N4 powder (amorphous, alpha-, and beta-Si3 N4) was mixed with MeOH containing 8.87 mol. % H2O and ground. The NH3 generation rapidly increased after a grinding time of 100 hours. Silicon nitride sintered material was chosen as one of the high temperature, high strength structural materials and studies of the control of the raw material powder, preparation of the sintered body (finding the right assistant, hot press, high pressure sintering, fracture toughness and oxidation at high temperature were performed.

  10. Bright and dark plasmon resonances of nanoplasmonic antennas evanescently coupled with a silicon nitride waveguide.

    PubMed

    Peyskens, Frédéric; Subramanian, Ananth Z; Neutens, Pieter; Dhakal, Ashim; Van Dorpe, Pol; Le Thomas, Nicolas; Baets, Roel

    2015-02-01

    In this work we investigate numerically and experimentally the resonance wavelength tuning of different nanoplasmonic antennas excited through the evanescent field of a single mode silicon nitride waveguide and study their interaction with this excitation field. Experimental interaction efficiencies up to 19% are reported and it is shown that the waveguide geometry can be tuned in order to optimize this interaction. Apart from the excitation of bright plasmon modes, an efficient coupling between the evanescent field and a dark plasmonic resonance is experimentally demonstrated and theoretically explained as a result of the propagation induced phase delay. PMID:25836168

  11. Silicon-nitride photonic circuits interfaced with monolayer MoS{sub 2}

    SciTech Connect

    Wei, Guohua; Stanev, Teodor K.; Czaplewski, David A.; Jung, Il Woong; Stern, Nathaniel P.

    2015-08-31

    We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

  12. Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators.

    PubMed

    Roland, I; Zeng, Y; Checoury, X; El Kurdi, M; Sauvage, S; Brimont, C; Guillet, T; Gayral, B; Gromovyi, M; Duboz, J Y; Semond, F; de Micheli, M P; Boucaud, P

    2016-05-01

    We have developed a nanophotonic platform with microdisks using epitaxial III-nitride materials on silicon. The two-dimensional platform consists of suspended waveguides and mushroom-type microdisks as resonators side-coupled with a bus waveguide. Loaded quality factors up to 80000 have been obtained in the near-infrared spectral range for microdisk diameters between 8 and 15 μm. We analyze the dependence of the quality factors as a function of coupling efficiency. We have performed continuous-wave second harmonic generation experiments in resonance with the whispering gallery modes supported by the microdisks. PMID:27137573

  13. Strength and fatigue of NT551 silicon nitride and NT551 diesel exhaust valves

    SciTech Connect

    Andrews, M.J.; Werezczak, A.A.; Kirkland, T.P.; Breder, K.

    2000-02-01

    The content of this report is excerpted from Mark Andrew's Ph.D. Thesis (Andrews, 1999), which was funded by a DOE/OTT High Temperature Materials Laboratory Graduate Fellowship. It involves the characterization of NT551 and valves fabricated with it. The motivations behind using silicon nitride (Si{sub 3}N{sub 4}) as an exhaust valve for a diesel engine are presented in this section. There are several economic factors that have encouraged the design and implementation of ceramic components for internal combustion (IC) engines. The reasons for selecting the diesel engine valve for this are also presented.

  14. Enhancement of oxidation resistance of NBD 200 silicon nitride ceramics by aluminum implantation

    NASA Astrophysics Data System (ADS)

    Mukundhan, Priya

    Silicon nitride (Si3N4) ceramics are leading candidates for high temperature structural applications. They have already demonstrated functional capabilities well beyond the limits of conventional metals and alloys in advanced diesel and turbine engines. However, the practical exploitation of these benefits is limited by their oxidation and associated degradation processes in chemically aggressive environments. Additives and impurities in Si3N4 segregate to the surface of Si3N 4 and accelerate its high temperature oxidation process. This study aims to investigate the oxidation behavior of Norton NBD 200 silicon nitride (hot isostatically pressed with ˜1 wt.% MgO) and its modification by aluminum surface alloying. NBD 200 samples tribochemically polished to a mirror finish (10 nm) were implanted with 5, 10, 20 and 30 at.% aluminum at multienergies and multi-doses to achieve a uniform implant depth distribution to 200 nm. Unimplanted and aluminum-implanted samples were oxidized at 800°--1100°C in 1 atm O2 for 0.5--10 hours. Oxidation kinetics was determined using profilometry in conjunction with etch patterning. The morphological, structural and chemical characteristics of the oxide were characterized by various analytical techniques such as scanning electron microscope and energy dispersive x-ray analysis, secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Oxidation of NBD 200 follows parabolic kinetics in the temperature range investigated and the process is diffusion-controlled. The oxide layers are enriched with sodium and magnesium from the bulk of the Si3N 4. The much higher oxidation rate for NBD 200 silicon nitride than for other silicon nitride ceramics with a similar amount of MgO is attributed to the presence of sodium. The rate-controlling mechanism is the outward diffusion of Mg2+ from the grain boundaries to the oxide scale. Aluminum implantation alleviates the detrimental effects of Na+ and Mg2+; not only is the rate of oxidation

  15. Development of a constitutive model for creep and life prediction of advanced silicon nitride ceramics

    SciTech Connect

    Ding, J.L.; Liu, K.C.; Brinkman, C.R.

    1992-12-31

    A constitutive model capable of describing deformation and predicting rupture life was developed for high temperature ceramic materials under general thermal-mechanical loading conditions. The model was developed based on the deformation and fracture behavior observed from a systematic experimental study on an advanced silicon nitride (Si{sub 3}N{sub 4}) ceramic material. Validity of the model was evaluated with reference to creep and creep rupture data obtained under constant and stepwise-varied loading conditions, including the effects of annealing on creep and creep rupture behavior.

  16. Structural Analysis of a Magnetically Actuated Silicon Nitride Micro-Shutter for Space Applications

    NASA Technical Reports Server (NTRS)

    Loughlin, James P.; Fettig, Rainer K.; Moseley, S. Harvey; Kutyrev, Alexander S.; Mott, D. Brent; Obenschain, Arthur F. (Technical Monitor)

    2002-01-01

    Finite element models have been created to simulate the electrostatic and electromagnetic actuation of a 0.5gm silicon nitride micro-shutter for use in a spacebased Multi-object Spectrometer (MOS). The micro-shutter uses a torsion hinge to go from the closed, 0 degree, position, to the open, 90 degree position. Stresses in the torsion hinge are determined with a large deformation nonlinear finite element model. The simulation results are compared to experimental measurements of fabricated micro-shutter devices.

  17. Processing and mechanical properties of silicon nitride formed by robocasting aqueous slurries

    SciTech Connect

    HE,GUOPING; HIRSCHFELD,DEIDRE A.; CESARANO III,JOSEPH

    2000-01-26

    Robocasting is a new freeform fabrication technique for dense ceramics. It uses robotics to control deposition of ceramic slurries through an orifice. The optimization of concentrated aqueous Si{sub 3}N{sub 4} slurry properties to achieve high green density robocast bodies and subsequent high sintered densities was investigated. The effects of pH, electrolyte, additives and solids loading on the dispersion and rheological properties of Si{sub 3}N{sub 4} slurries were determined. The mechanical behavior of sintered robocast bars was determined and compared to conventionally produced silicon nitride ceramics.

  18. The effect of preparation conditions on the structure and mechanical properties of reaction-sintered silicon nitride

    NASA Technical Reports Server (NTRS)

    Heinrich, J.

    1980-01-01

    The microstructure of reaction sintered silicon nitride (RSSN) was changed over a wide range by varying the grain density, grain size of the silicon starting powder, nitriding conditions, and by introducing artificial pores. The influence of single microstructural parameters on mechanical properties like room temperature strength, creep behavior, and resistance to thermal shock was investigated. The essential factors influencing these properties were found to be total porosity, pore size distribution, and the fractions of alpha and beta Si3N4. In view of high temperature engineering applications of RSSN, potentials for optimizing the material's properties by controlled processing are discussed.

  19. On the possibility of silicon nitride as a ceramic for structural orthopaedic implants. Part I: processing, microstructure, mechanical properties, cytotoxicity.

    PubMed

    Mazzocchi, Mauro; Bellosi, Alida

    2008-08-01

    Notwithstanding the good combination of mechanical and tribological properties, the suitability of silicon nitride for application as prosthesis in bone reconstruction or in articular joints replacements is still controversial. This study aims to design and produce three different silicon nitride-based ceramics and to test the materials. In this Part I the microstructure and mechanical properties evidence outstanding characteristics and the cytotoxicity studies confirm that all the materials are extremely inert and biocompatible. In Part II, the wear performance and the wettability and chemical stability against different aqueous media and physiological solutions are investigated and discussed. PMID:18347952

  20. Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

    SciTech Connect

    Okada, H.; Kato, M.; Ishimaru, T.; Sekiguchi, H.; Wakahara, A.; Furukawa, M.

    2014-02-20

    Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride.

  1. Power mixture and green body for producing silicon nitride base & articles of high fracture toughness and strength

    DOEpatents

    Huckabee, Marvin L.; Buljan, Sergej-Tomislav; Neil, Jeffrey T.

    1991-01-01

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength. The powder mixture includes 9a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon mitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12m.sup.2 g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified articel an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder.

  2. Design, analysis, and characterization of stress-engineered 3D microstructures comprised of PECVD silicon oxide and nitride

    NASA Astrophysics Data System (ADS)

    Pi, Chia-Hsing; Turner, Kevin T.

    2016-06-01

    Microelectromechanical systems (MEMS) are typically 2D or quasi-3D structures fabricated using surface and bulk micromachining processes. In this work, an approach for 3D structure fabrication based on stress engineering is demonstrated. Specifically, sub-mm 3D spherical cage-like structures are realized through the deformation of bilayers of residually-stressed silicon oxide and silicon nitride with micrometer-scale thicknesses. Analytical and finite models to predict the shape of stress-engineered structures based on geometry and residual stress are described and used for structure design. A systematic experimental study was performed to quantify residual stresses in silicon nitride films made by plasma-enhanced chemical vapor deposition (PECVD). The measurements show that the residual stress of PECVD silicon nitride can be tuned over a wide range of tensile stresses through the control of deposition parameters, such as flow rate and power. Stress engineered 3D cage-like structures comprised of PECVD silicon nitride and oxide films were fabricated. 3D structures with a range of curvatures were demonstrated. The measured geometry of the fabricated structures are in good agreement with predictions from analytical and finite element models.

  3. Alumina and silicon oxide/nitride sidewall passivation for P- and N-type sensors

    NASA Astrophysics Data System (ADS)

    Christophersen, M.; Fadeyev, V.; Phlips, B. F.; Sadrozinski, H. F.-W.; Parker, C.; Ely, S.; Wright, J. G.

    2013-01-01

    Silicon detectors normally have an inactive region along the perimeter of the sensor. In this paper we describe a "scribe, cleave, and passivate" (SCP) technique for the fabrication of slim edges in a post processing with finished detectors. The scribing was done by laser-scribing and etching. After scribing and cleaving steps, the sidewalls are passivated with a dielectric. We present results for n- and p-type sensors with different sidewall passivations. The leakage current depends strongly on the type of sidewall passivation. An alumina passivation leads to very low leakage currents for p-type sensors because of a negative interface charge. For n-type sensors, a hydrogenated silicon nitride shows the lowest leakage currents. Furthermore, we applied the technique to large area n-type single-sided strip detectors (cleaving length up to 3.5 cm).

  4. Effects of ambient conditions on the adhesion of cubic boron nitride films on silicon substrates

    SciTech Connect

    Cardinale, G.F.; Howitt, D.G.; Mirkarimi, P.B.; McCarty, K.F.; Klaus, E.J.; Medlin, D.L.

    1994-08-01

    Effect of environmental conditions on cubic boron nitride (cBN) film adhesion to silicon substrates was studied. cBN films were deposited onto (100)-oriented silicon substrates by ion-assisted pulsed laser deposition. Irradiating ions were mixtures of nitrogen with argon, krypton, and xenon. Under room-ambient conditions, the films delaminated in the following time order: N/Xe, N/Kr, and N/Ar. cBN films deposited using N/Xe ion-assisted deposition were exposed to four environmental conditions for several weeks: a 1-mTorr vacuum, high humidity, dry oxygen, and dry nitrogen. Films exposed to the humid environment delaminated whereas those stored under vacuum or in dry gases did not. Films stored in dry nitrogen were removed after nearly two weeks and placed in the high-humidity chamber; these films subsequently delaminated within 14 hours.

  5. Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding

    SciTech Connect

    Mu, Jianwei E-mail: soref@rcn.com; Kimerling, Lionel C.; Michel, Jurgen; Soref, Richard E-mail: soref@rcn.com

    2014-01-20

    Silicon-on-nitride (SON) is a convenient, low-loss platform for mid-infrared group IV plasmonics and photonics. We have designed 5-layer SON channel-waveguides and slab-waveguides for the 2.0 to 5.4 μm wavelength range and have simulated the resulting three-dimensional (3D) and two-dimensional (2D) SON gap-plasmon modes. Our simulations show propagation lengths of ∼60 μm for 3D gap-strip modes having a 0.003 λ{sup 2} cross-section. Because the ∼50-nm SON (Si{sub 3}N{sub 4}) mode region is also a gate insulator between silver (Ag) and n-doped Silicon (Si), metal-oxide-semiconductor accumulation gating is available for electro-optical loss modulation of the gap-confined mode.

  6. Silicon nitride CMOS-compatible platform for integrated photonics applications at visible wavelengths.

    PubMed

    Romero-García, Sebastian; Merget, Florian; Zhong, Frank; Finkelstein, Hod; Witzens, Jeremy

    2013-06-17

    Silicon nitride is demonstrated as a high performance and cost-effective solution for dense integrated photonic circuits in the visible spectrum. Experimental results for nanophotonic waveguides fabricated in a standard CMOS pilot line with losses below 0.71dB/cm in an aqueous environment and 0.51dB/cm with silicon dioxide cladding are reported. Design and characterization of waveguide bends, grating couplers and multimode interference couplers (MMI) at a wavelength of 660 nm are presented. The index contrast of this technology enables high integration densities with insertion losses below 0.05 dB per 90° bend for radii as small as 35 µm. By a proper design of the buried oxide layer thickness, grating couplers with efficiencies above 38% for the TE polarization have been obtained. PMID:23787593

  7. Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

    SciTech Connect

    Teii, K. Ito, H.; Katayama, N.; Matsumoto, S.

    2015-02-07

    Rectification properties of boron nitride/silicon p-n heterojunction diodes fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition are studied in terms of the resistive sp{sup 2}-bonded boron nitride (sp{sup 2}BN) interlayer. A two-step biasing technique is developed to control the fraction of cubic boron nitride (cBN) phase and, hence, the thickness of the sp{sup 2}BN interlayer in the films. The rectification ratio at room temperature is increased up to the order of 10{sup 4} at ±10 V of biasing with increasing the sp{sup 2}BN thickness up to around 130 nm due to suppression of the reverse leakage current. The variation of the ideality factor in the low bias region is related to the interface disorders and defects, not to the sp{sup 2}BN thickness. The forward current follows the Frenkel-Poole emission model in the sp{sup 2}BN interlayer at relatively high fields when the anomalous effect is assumed. The transport of the minority carriers for reverse current is strongly limited by the high bulk resistance of the thick sp{sup 2}BN interlayer, while that of the major carriers for forward current is much less affected.

  8. Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

    NASA Astrophysics Data System (ADS)

    Teii, K.; Ito, H.; Katayama, N.; Matsumoto, S.

    2015-02-01

    Rectification properties of boron nitride/silicon p-n heterojunction diodes fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition are studied in terms of the resistive sp2-bonded boron nitride (sp2BN) interlayer. A two-step biasing technique is developed to control the fraction of cubic boron nitride (cBN) phase and, hence, the thickness of the sp2BN interlayer in the films. The rectification ratio at room temperature is increased up to the order of 104 at ±10 V of biasing with increasing the sp2BN thickness up to around 130 nm due to suppression of the reverse leakage current. The variation of the ideality factor in the low bias region is related to the interface disorders and defects, not to the sp2BN thickness. The forward current follows the Frenkel-Poole emission model in the sp2BN interlayer at relatively high fields when the anomalous effect is assumed. The transport of the minority carriers for reverse current is strongly limited by the high bulk resistance of the thick sp2BN interlayer, while that of the major carriers for forward current is much less affected.

  9. Synthesis of Silicon Nitride and Silicon Carbide Nanocomposites through High Energy Milling of Waste Silica Fume for Structural Applications

    NASA Astrophysics Data System (ADS)

    Suri, Jyothi

    Nanocomposites have been widely used in a multitude of applications in electronics and structural components because of their improved mechanical, electrical, and magnetic properties. Silicon nitride/Silicon carbide (Si 3N4/SiC) nanocomposites have been studied intensively for low and high temperature structural applications, such as turbine and automobile engine components, ball bearings, turbochargers, as well as energy applications due to their superior wear resistance, high temperature strength, high oxidation resistance and good creep resistance. Silica fume is the waste material produced during the manufacture of silicon and ferro-silicon alloys, and contains 94 to 97 wt.% SiO2. In the present dissertation, the feasibility of using waste silica fume as the raw material was investigated to synthesize (I) advanced nanocomposites of Si3N4/SiC, and (2) porous silicon carbide (SiC) for membrane applications. The processing approach used to convert the waste material to advanced ceramic materials was based on a novel process called, integrated mechanical and thermal activation process (IMTA) process. In the first part of the dissertation, the effect of parameters such as carbothermic nitridation and reduction temperature and the graphite concentration in the starting silica fume plus graphite mixture, were explored to synthesize nanocomposite powders with tailored amounts of Si3N4 and SiC phases. An effective way to synthesize carbon-free Si3N 4/SiC composite powders was studied to provide a clear pathway and fundamental understanding of the reaction mechanisms. Si3N4/SiC nanocomposite powders were then sintered using two different approaches, based on liquid phase sintering and spark plasma sintering processes, with Al 2O3 and Y2O3 as the sintering aids. The nanocomposites were investigated for their densification behavior, microstructure, and mechanical properties. Si3N4/SiC nanocomposites thus obtained were found to possess superior mechanical properties at much

  10. Assessment of techniques for characterizing the surface quality of ground silicon nitride

    SciTech Connect

    Zanoria, E.S.; Watkins, T.R.; Breder, K.; Riester, L.; Bashkansky, M.; Reintjes, J.; Blau, P.J.; Sun, J.G.; Ellingson, W.A.

    1998-08-01

    This study evaluates techniques used to detect and quantify the extent of surface and subsurface damage in ground silicon nitride. Specimens of two differently ground surfaces of a hot isostatically pressed (HIP) silicon nitride, commercially designated as GS-44, were subjected to six types of analyses, namely mechanical stylus profiling, atomic force microscopy, point-counting analysis of fragmentation pits, laser-light scattering, optical gating, and grazing incidence x-ray diffraction (GIXD). The results of these investigations are compared and discussed. The techniques providing the clearest correlations with grinding conditions were mechanical stylus roughness, fragmentation analysis, and GIXD (residual stress conditions). Those that exhibited some correlation but appear to require more work to develop a reliable evaluation method were laser scattering and optical gating. Atomic force microscopy was useful, but not as a routine investigative tool for quality control in ceramic machining. The techniques that appear to have the most near-term potential for routine use are fragmentation analysis and optical gating. Laser-based optical scattering exhibits potential for routine application, but, more development is needed for its commercialization.

  11. Comparative study of elastic constantd of α-, β- and Cubic- silicon nitride

    NASA Astrophysics Data System (ADS)

    Yao, Hongzhi; Ouyang, Lizhi; Ching, Wai-Yim

    2003-03-01

    Silicon nitride is an important structural ceramic and dielectric insulator. Recently, the new high pressure cubic phase of silicon nitride in spinel structure has attracted a lot of attention.^[1] We have carried out a detailed ab-initio calculation of all independent elastic constants for all three phases of Si_3N4 by using the Vienna Ab-initio Simulation Package (VASP) in both LDA and GGA approxmations. The results for β-Si_3N4 are in reasonable agreement with a experimental measurement on single crystal samples.^[2] For cubic-Si_3N4 , The three independent elastic constants are predicted to be C_11 = 504.16 GPa, C_12 = 176.66 GPa, C_44 = 326.65 GPa and a bulk modulus B = 286 GPa. This value is very close to the experimental value of 300 GPa.^[1] All these results will be compared with those obtained by using the OLCAO method based on localized orbital approach.^[3] [1]. Wai-Yim Ching, Yong-Nian Xu, Jukian D. Gale, and Manfred Ruhle, J. Am. Ceram. Soc. 81, 3189 (1998) [2]. R. Vogelgesang, M. Grimsditch, and J. S. Wallace, Appl. Phys. Lett. 76, 8 (2000) [3]. W.Y.Ching, Lizhi Ouyang, and Julian D. Gale, Phys. Rev. B61, 13, (2000)

  12. Effect of W and WC on the oxidation resistance of yttria-doped silicon nitride

    NASA Technical Reports Server (NTRS)

    Schuon, S.

    1980-01-01

    The effect of tungsten and tungsten carbide contamination on the oxidation and cracking in air of yttria-doped silicon nitride ceramics is investigated. Silicon nitride powder containing 8 wt % Y2O3 was doped with 2 wt % W, 4 wt % W, 2 wt % WC or left undoped, and sintered in order to simulate contamination during milling, and specimens were exposed in air to 500, 750 and 1350 C for various lengths of time. Scanning electron and optical microscopy and X-ray diffraction of the specimens in the as-sintered state reveals that the addition of W or WC does not affect the phase relationships in the system, composed of alpha and beta Si3N4, melilite and an amorphous phase. Catastrophic oxidation is observed at 750 C in specimens containing 2 and 4 wt % W, accompanied by the disappearance of alpha Si3N4 and melilite from the structure. At 1350 C, the formation of a protective glassy oxide layer was observed on all specimens without catastrophic oxidation, and it is found that pre-oxidation at 1350 C also improved the oxidation resistance at 750 C of bars doped with 4 wt % W. It is suggested that tungsten contamination from WC grinding balls may be the major cause of the intermediate-temperature cracking and instability frequently observed in Si3N4-8Y2O3.

  13. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    NASA Astrophysics Data System (ADS)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

    2016-09-01

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  14. DNA-functionalized silicon nitride nanopores for sequence-specific recognition of DNA biosensor

    NASA Astrophysics Data System (ADS)

    Tan, Shengwei; Wang, Lei; Yu, Jingjing; Hou, Chuanrong; Jiang, Rui; Li, Yanping; Liu, Quanjun

    2015-05-01

    Nanopores have been proven to be novel and versatile single-molecule sensors for individual unlabeled biopolymer detection and characterization. In the present study, a relatively large silicon nitride (Si3N4) nanopore with a diameter of approximately 60 nm was fabricated successfully using a focused Ga ion beam (FIB). We demonstrated a simple ex situ silanization procedure to control the size and functionality of solid-state nanopores. The presented results show that by varying the silanization time, it is possible to adjust the efficiency of probe molecule attachment, thus shrinking the pore to the chosen size, while introducing selective sensing probes. The functionalization of nanopores was verified by analysis of field-emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), and electrical measurements. Based on this study, we envision that the functionalized silicon nitride nanopores with the DNA probe might provide a biosensing platform for the detection and discrimination of a short single-stranded DNA oligomer of unknown sequences in the future.

  15. Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1991-01-01

    An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

  16. Visible Photoluminescence of Non-Stoichiometric Silicon Nitride Films: The Effect of Annealing Temperature and Atmosphere

    NASA Astrophysics Data System (ADS)

    Vlasukova, L. A.; Komarov, F. F.; Parkhomenko, I. N.; Milchanin, O. V.; Makhavikou, M. A.; Mudryi, A. V.; Żuk, J.; Kopychiński, P.; Togambayeva, A. K.

    2015-07-01

    The radiative properties of non-stoichiometric silicon nitride SiNx fi lms produced by plasma-enhanced chemical vapor deposition were studied. Intense room-temperature photoluminescence (PL) in the visible region was recorded after annealing for both Si-rich (x = 1.13) and N-rich (x = 1.5) silicon nitride fi lms. The position of the PL band maximum depended signifi cantly on the fi lm composition. The PL band maxima for Si-rich and N-rich SiNx fi lms were detected in the red (660 nm) and blue (450 nm) spectral regions, respectively. The effect of the annealing atmosphere on PL of the SiNx fi lms was studied. It was shown that the PL intensity depended not only on the annealing temperature but also on the annealing atmosphere. The observed features of the non-stoichiometric SiNx PL spectra were explained in terms of defect states in the SiNx band gap.

  17. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  18. Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors

    PubMed Central

    Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

    2012-01-01

    We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit. PMID:23082282

  19. Study on plasma-spraying coating bioactive ceramics onto silicon nitride surface as composite endosteal implants.

    PubMed

    Xu, L L; Shi, S J

    1997-01-01

    The successful key of endosteal implants depends on the properties of implant materials which are very important for oral implantology at the present. Because silicon nitride has high strength and hydroxylapatite (HA) and flourapatite (FA) have good biocompatibility. In this paper, we apply silicon nitride as base material. Plasma spray HA, FA onto its surface as composite endosteal implants. Physical and chemical properties test, includes X-ray diffraction (XRD), scanning electronic microscope (SEM), EDAX and bonding strength test (push-out test). The results indicate: after plasma-spraying coating, crystalline phase of HA and FA unchanged and form a lot of pores among the crystal particles. Those pores benefit bone growing into them. It is very important for implants to be fixed in bone for long time, Ca/P ratio has no significant change. Bonding strength test results indicate: Si3N4-HA 23.6MPa, Si3N4-FA 27.12 MPa are higher than that of Ti-HA 15.07 MPa. On the basis of these studies, they are kinds of ideal implant materials. PMID:9731426

  20. Effect of Projectile Materials on Foreign Object Damage of a Gas-Turbine Grade Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.; Gyekenyesi, John P.

    2005-01-01

    Foreign object damage (FOD) behavior of AS800 silicon nitride was determined using four different projectile materials at ambient temperature. The target test specimens rigidly supported were impacted at their centers by spherical projectiles with a diameter of 1.59 mm. Four different types of projectiles were used including hardened steel balls, annealed steel balls, silicon nitride balls, and brass balls. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to better understand the severity of local impact damage. The critical impact velocity where target specimens fail upon impact was highest with brass balls, lowest with ceramic ball, and intermediate with annealed and hardened steel balls. Degree of strength degradation upon impact followed the same order as in the critical impact velocity with respect to projectile materials. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles and was correlated in terms of critical impact velocity, impact deformation, and impact load.

  1. High frequency ultrasonic detection of C-crack defects in silicon nitride bearing balls.

    PubMed

    Deneuville, F; Duquennoy, M; Ouaftouh; Ourak, M; Jenot, F; Desvaux, S

    2009-01-01

    A non-destructive testing method for silicon nitride bearing balls based on ultrasonic resonance spectroscopy is proposed here. Through the theoretical study of their elastic vibrations, it is possible to characterize the balls using a vibration mode that is similar to surface wave propagation. The study of the influence of C-crack defects on the resonances of Rayleigh modes is presented here. These C-cracks are typically formed by impacts between balls during finishing or handling. They are frequently found on the surface of silicon nitride bearing balls and these C-cracks decrease the rolling contact fatigue life considerably. This kind of defect is difficult to detect because the C-shaped surface crack is very small and narrow (500 microm x 5 microm), and its depth does not exceed 50 microm. The proposed methodology can both excite spheroidal vibrations in the ceramic balls and detect such vibrations over a large frequency range. In particular, high frequency vibrations are considered because these are similar to the surface waves propagating in the cortical zone of the ceramic balls and consequently they can be used to detect C-crack defects. PMID:18657837

  2. Thickness limitations in carbon nanotube reinforced silicon nitride coatings synthesized by vapor infiltration

    SciTech Connect

    Eres, Gyula

    2012-01-01

    Chemical vapor infiltration is a convenient method for synthesizing carbon nanotube (CNT)-reinforced ceramic coatings. The thickness over which infiltration is relatively uniform is limited by gas phase diffusion in the pore structure. These effects were investigated in two types of silicon nitride matrix composites. With CNTs that were distributed uniformly on the substrate surface dense coatings were limited to thicknesses of several microns. With dual structured CNT arrays produced by photolithography coatings up to 400 gm thick were obtained with minimal residual porosity. Gas transport into these dual structured materials was facilitated by creating micron sized channels between "CNT pillars" (i.e. each pillar consisted of a large number of individual CNTs). The experimental results are consistent with basic comparisons between the rates of gas diffusion and silicon nitride growth in porous structures. This analysis also provides a general insight into optimizing infiltration conditions during the fabrication of thick CNT-reinforced composite coatings. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  3. Effect of Silicon Nitride Balls and Rollers on Rolling Bearing Life

    NASA Technical Reports Server (NTRS)

    Zaretsky, Erwin V.; Vlcek, Brian L.; Hendricks, Robert C.

    2005-01-01

    Three decades have passed since the introduction of silicon nitride rollers and balls into conventional rolling-element bearings. For a given applied load, the contact (Hertz) stress in a hybrid bearing will be higher than an all-steel rolling-element bearing. The silicon nitride rolling-element life as well as the lives of the steel races were used to determine the resultant bearing life of both hybrid and all-steel bearings. Life factors were determined and reported for hybrid bearings. Under nominal operating speeds, the resultant calculated lives of the deep-groove, angular-contact, and cylindrical roller hybrid bearings with races made of post-1960 bearing steel increased by factors of 3.7, 3.2, and 5.5, respectively, from those calculated using the Lundberg-Palmgren equations. An all-steel bearing under the same load will have a longer life than the equivalent hybrid bearing under the same conditions. Under these conditions, hybrid bearings are predicted to have a lower fatigue life than all-steel bearings by 58 percent for deep-groove bearings, 41 percent for angular-contact bearings, and 28 percent for cylindrical roller bearings.

  4. Surface analytical studies of ion-implanted uni-directionally aligned silicon nitride for tribological applications

    NASA Astrophysics Data System (ADS)

    Nakamura, Naoki; Hirao, Kiyoshi; Yamauchi, Yukihiko

    2004-03-01

    Uni-directionally aligned silicon nitride, which exhibits both high strength and high toughness, was implanted with B +, N +, Si + and Ti + ions at a fluence of 2 × 10 17 ions/cm 2 and an energy of 200 keV. The effect of ion implantation on the surface structure of the uni-directionally aligned silicon nitride has been studied, in terms of surface analyses such as atomic force microscopy (AFM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray absorption near edge structure (XANES). It was clarified that the ion-implanted layer was amorphized and the implantation profile showed good agreement with that estimated from a TRIM simulation. It was found that BN and TiN were formed in B +- and Ti +-implanted Si 3N 4, respectively. There was a slight difference in ion implantation depth among different structures of Si 3N 4, considered to be due to differences in ion channeling.

  5. Review of corrosion behavior of ceramic heat exchanger materals: Corrosion characteristics of silicon carbide and silicon nitride. Final report, September 11, 1992--March 11, 1993

    SciTech Connect

    Munro, R.G.; Dapkunas, S.J.

    1993-09-01

    The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags.

  6. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications

    SciTech Connect

    Kang, S.; Selverian, J.H.; Kim, H.; O'Niel, D.; Kim, K. )

    1990-04-01

    This report summarizes the results of Phase I of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650 and 950{degree}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA), using ABAQUS code, were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing and service. Finally, the FEA results were compared with experiments using an idealized strength relationship. The results showed that the measured strength of the joint reached 30--90% of the strength by predicted by FEA. Overall results demonstrated that FEA is an effective tool for designing the geometries of ceramic-metal joints and that joining by brazing is a relevant method for advanced heat engine applications. 33 refs., 54 figs., 36 tabs.

  7. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    SciTech Connect

    Wan, Yimao; Thomson, Andrew F.; Cuevas, Andres; McIntosh, Keith R.

    2015-01-26

    Recombination at silicon nitride (SiN{sub x}) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH{sub 3}) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH{sub 3} plasma exposure causes (i) an increase in the density of Si≡N{sub 3} groups in both SiN{sub x} and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiN{sub x}/c-Si interface, and (iv) a reduction in the density of positive charge in SiN{sub x}. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiN{sub x} or a-Si. It is therefore important for device performance to minimize NH{sub 3} plasma exposure of SiN{sub x} or a-Si passivating films during subsequent fabrication steps.

  8. Laser doping and metallization of wide bandgap materials: silicon carbide, gallium nitride, and aluminum nitride

    NASA Astrophysics Data System (ADS)

    Salama, Islam Abdel Haleem

    A laser direct write and doping (LDWD) system is designed and utilized for direct metallization and selective area doping in different SiC polytypes, GaN and in dielectrics including AlN. Laser direct metallization in 4H- and 6H-SiC generates metal-like conductive phases that are produced as both rectifying and ohmic contacts without metal deposition. Nd:YAG (lambda = 532, 1064 nm) nanosecond pulsed laser irradiation in SiC induces carbon-rich conductive phases by thermal decomposition of SiC while UV excimer (lambda = 193 nm) laser irradiation produces a silicon-rich phase due to selective carbon photoablation. Linear transmission line method (TLM) pattern is directly fabricated in single crystals SiC by pulsed laser irradiation allowing characterization of the laser fabricated metal-like contacts. Activation of a self focusing effect at the frequency doubled Nd:YAG laser irradiation (lambda = 532 nm) allows to fabricate buried metal like contacts in SiC wafers while maintaining their device-ready surface condition. Gas immersion laser doping (GILD) and laser doping from a molten precursor are utilized to dope both GaN and SiC. Trimethylaluminum (TMAl) and nitrogen are the precursors used to produce p-type and n-type doped SiC; respectively. Nd:YAG and excimer laser nitrogen doping in SiC epilayer and single crystal substrates increases the dopant concentration by two orders of magnitude and produces both deep (500--600 nm) and shallow (50 nm) junctions, respectively. Laser assisted effusion/diffusion is introduced and utilized to dope Al in SiC wafers. Using this technique, a150 nm p-type doped junction is fabricated in semi-insulating 6H- and n-type doped 4H-SiC wafers. Laser-induced p-type doping of Mg in single crystal GaN is conducted using Bis-magnesium dihydrate [Mg(TMHD)2]. Mg concentration and penetration depth up to 10 20--1021 cm-3 and 5mum, respectively are achieved using various laser doping techniques. Laser direct writing and doping (LDWD) is a

  9. Demonstration of a silicon nitride attrition mill for production of fine pure Si and Si3N4 powders

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.; Glasgow, T. K.; Orth, N. W.

    1984-01-01

    To avoid metallic impurities normally introduced by milling ceramic powders in conventional steel hardware, an attrition mill (high-energy stirred ball mill) was constructed with the wearing parts (mill body, stirring arms, and media) made from silicon nitride. Commercial silicon and Si3N4 powders were milled to fine uniform particles with only minimal contamination - primarily from wear of the sintered Si3N4 media.

  10. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    NASA Astrophysics Data System (ADS)

    Ghulinyan, M.; Bernard, M.; Bartali, R.; Pucker, G.

    2015-12-01

    In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  11. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect

    Posseme, N. Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  12. Correlation of charge transport to intrinsic strain in silicon oxynitride and Si-rich silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Habermehl, S.; Apodaca, R. T.

    2004-01-01

    Poole-Frenkel emission in Si-rich nitride and silicon oxynitride thin films is studied in conjunction with compositional aspects of their elastic properties. For Si-rich nitrides varying in composition from SiN1.33 to SiN0.54, the Poole-Frenkel trap depth (ΦB) decreases from 1.08 to 0.52 eV as the intrinsic film strain (ɛi) decreases from 0.0036 to -0.0016. For oxynitrides varying in composition from SiN1.33 to SiO1.49N0.35, ΦB increases from 1.08 to 1.53 eV as ɛi decreases from 0.0036 to 0.0006. In both material systems, a direct correlation is observed between ΦB and ɛi. Compositionally induced strain relief as a mechanism for regulating ΦB is discussed.

  13. Correlation of charge transport to intrinsic strain in silicon oxynitride and Si-rich silicon nitride thin films.

    SciTech Connect

    Apodaca, Roger T.; Habermehl, Scott D.

    2003-07-01

    Poole-Frenkel emission in Si-rich nitride and silicon oxynitride thin films is studied in conjunction with compositional aspects of their elastic properties. For Si-rich nitrides varying in composition from SiN{sub 1.33} to SiN{sub 0.54}, the Poole-Frenkel trap depth ({Phi}{sub B}) decreases from 1.08 to 0.52 eV as the intrinsic film strain ({Epsilon}{sub i}) decreases from 0.0036 to -0.0016. For oxynitrides varying in composition from SiN{sub 1.33} to SiO{sub 1.49}N{sub 0.35}, {Phi}{sub B} increases from 1.08 to 1.53 eV as {Epsilon}{sub i} decreases from 0.0036 to 0.0006. In both material systems, a direct correlation is observed between {Phi}{sub B} and {Epsilon}{sub i}. Compositionally induced strain relief as a mechanism for regulating {Phi}{sub B} is discussed.

  14. Fabrication of a full-size EUV pellicle based on silicon nitride

    NASA Astrophysics Data System (ADS)

    Goldfarb, Dario L.

    2015-10-01

    In this paper, the fabrication and initial characterization of an unsupported membrane composed of a single ultrathin silicon nitride (SiNx) layer with potential application as a EUV pellicle is described in detail. A full size free-standing pellicle with inner film area equal to 113x145mm and champion EUV transparency equal to 89.5% (single pass) is demonstrated utilizing the methodology presented in this study. The exemplary EUV transparency of the reported pellicle was achieved by limiting the membrane thickness to 16nm, while the intrinsic mechanical stability for the silicon nitride film was realized by adjusting the Si:N ratio to provide a non-stoichiometric layer featuring low tensile stress. The pellicle thickness, elemental composition and mass density were used to calculate the expected EUV transparency, which was found to be in good agreement with experimental EUV transmission measurements. Additionally, careful consideration was given to process-induced mechanical instabilities exerted on the ultrathin pellicle during the wet etch, rinsing and drying fabrication steps, and a unique yet simple set of ancillary hardware, materials and processing techniques was introduced to minimize such disturbances and yield large-area pellicles that are free of visible defects and wrinkles. In the absence of commercially available actinic inspection tools, a distinctive advantage of the SiNx membrane versus a Silicon-based EUV pellicle solution is the demonstrated ArF transmission, making it attractive for through-pellicle mask defect inspection and advanced metrology work utilizing available 193nm excimer laser and detection systems. A preliminary heat load test indicates that the SiNx-based EUV pellicle would be marginally compatible with an equivalent 80W EUV source.

  15. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.

    PubMed

    Liu, Li-Hong; Michalak, David J; Chopra, Tatiana P; Pujari, Sidharam P; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D; Zuilhof, Han; Chabal, Yves J

    2016-03-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface). PMID:26870908

  16. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si3N4 and SiO2

    NASA Astrophysics Data System (ADS)

    Liu, Li-Hong; Michalak, David J.; Chopra, Tatiana P.; Pujari, Sidharam P.; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D.; Zuilhof, Han; Chabal, Yves J.

    2016-03-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  17. Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

    NASA Astrophysics Data System (ADS)

    Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

    2015-10-01

    Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

  18. Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride.

    PubMed

    Ande, Chaitanya Krishna; Knoops, Harm C M; de Peuter, Koen; van Drunen, Maarten; Elliott, Simon D; Kessels, Wilhelmus M M

    2015-09-17

    There is an urgent need to deposit uniform, high-quality, conformal SiN(x) thin films at a low-temperature. Conforming to these constraints, we recently developed a plasma enhanced atomic layer deposition (ALD) process with bis(tertiary-butyl-amino)silane (BTBAS) as the silicon precursor. However, deposition of high quality SiNx thin films at reasonable growth rates occurs only when N2 plasma is used as the coreactant; strongly reduced growth rates are observed when other coreactants like NH3 plasma, or N2-H2 plasma are used. Experiments reported in this Letter reveal that NH(x)- or H- containing plasmas suppress film deposition by terminating reactive surface sites with H and NH(x) groups and inhibiting precursor adsorption. To understand the role of these surface groups on precursor adsorption, we carried out first-principles calculations of precursor adsorption on the β-Si3N4(0001) surface with different surface terminations. They show that adsorption of the precursor is strong on surfaces with undercoordinated surface sites. In contrast, on surfaces with H, NH2 groups, or both, steric hindrance leads to weak precursor adsorption. Experimental and first-principles results together show that using an N2 plasma to generate reactive undercoordinated surface sites allows strong adsorption of the silicon precursor and, hence, is key to successful deposition of silicon nitride by ALD. PMID:26722730

  19. High-quality silicon on silicon nitride integrated optical platform with an octave-spanning adiabatic interlayer coupler.

    PubMed

    Hosseinnia, Amir H; Atabaki, Amir H; Eftekhar, Ali A; Adibi, Ali

    2015-11-16

    Hybrid nanophotonic platforms based on three-dimensional integration of different photonic materials are emerging as promising ecosystems for the optoelectronic device fabrication. In order to benefit from key features of both silicon (Si) and silicon nitride (SiN) on a single chip, we have developed a wafer-scale hybrid photonic platform based on the integration of a thin crystalline Si layer on top of a thin SiN layer with an ultra-thin oxide buffer layer. A complete optical path in the hybrid platform is demonstrated by coupling light back and forth between nanophotonic devices in Si and SiN layers. Using an adiabatic tapered coupling method, a record-low interlayer coupling-loss of 0.02 dB is achieved at 1550 nm telecommunication wavelength window. We also demonstrate high-Q resonators on the hybrid material platform with intrinsic Q's as high as 3 × 10(6) for a 60 μm-radius microring resonator, which is (to the best of our knowledge) the highest Q observed for a micro-resonator on a hybrid Si/SiN platform. PMID:26698509

  20. Electrical characterization of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Ang, S. S.; Shi, Y. J.; Brown, W. D.

    1994-12-01

    The electrical characteristics of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited (PECVD) silicon dioxide metal-oxide-silison (MOS) structures were investigated. Both nitridation temperature and time affect the properties of the MOS structures as revealed by capacitance-voltage (C-V) characteristics. Nitridation at 1000 C for 60 s followed by reoxidtion for 60 s at 1000 C in an oxygen/ nitrogen ambient was found to be superior to the same nitridation followed by reoxidation in pure oxygen. Typical vlaues of fixed charge and interface state densities for devices subjected to nitridation and reoxidation in a mixture of oxygen and nitrogen were 4 x 10(exp 10) cm(exp -2) and 7 x 10(exp 10) eV(exp -1) cm(exp -2), respectively. Avalanche electron injection using electric field of 3-5 MV/cm produced negative shifts in flatband voltage for low fluence levels and positive flatband voltage shifts for larger fluence levels. Furthermore, the magnitudes of both positive and negative shifts and the electron fluence level at which turnaround occurs increase with electric field. However, independent of the electric field, the flatband voltage saturates very close to its preinjection vlaue. These results strongly suggest that device quality MOS dielectrics can be realized by nitridation/reoxidation of PECVD oxide.

  1. Effect of ion nitriding on the abrasive wear resistance of ultrahigh-strength steels with different silicon contents

    NASA Astrophysics Data System (ADS)

    Riofano, R. M. Muñoz; Casteletti, L. C.; Nascente, P. A. P.

    2005-02-01

    This article studies the effect of silicon (Si) on ultrahigh-strength AISI 4340 steels in connection with the thermal treatment, as well as the influence of this element on nitriding and, consequently, abrasive wear. Four alloys with different Si contents were nitrided at 350 °C (4 and 8 h) and 500 and 550 °C (2 and 4 h) in a gas mixture of 80 vol.% H2 and 20 vol.% N2. The nitrided layers were characterized by microhardness and pin-on-disk tests, optical microscopy, scanning electron microscopy with energy-dispersive x-ray spectrometry, and x-ray diffraction (XRD). The increase in Si enhanced the tempering resistance of the steels and also improved considerably the hardness of the nitrided layers. The increase in Si produced thinner compound layers with better hardness quality and high abrasive wear resistance. XRD analysis detected a mixture of nitrides in the layers γ‧-Fe4N, ɛ-Fe2 3N, CrN, MoN, and Si3N4 with their proportions varying with the nitriding conditions.

  2. Paralinear Oxidation of Silicon Nitride in a Water Vapor/Oxygen Environment

    NASA Technical Reports Server (NTRS)

    Fox, Dennis S.; Opila, Elizabeth J.; Nguyen, QuynhGiao; Humphrey, Donald L.; Lewton, Susan M.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Three silicon nitride materials were exposed to dry oxygen flowing at 0.44 cm/s at temperatures between 1200 and 1400 C. Reaction kinetics were measured with a continuously recording microbalance. Parabolic kinetics were observed. When the same materials were exposed to a 50% H2O - 50% O2 gas mixture flowing at 4.4 cm/s, all three types exhibited paralinear kinetics. The material is oxidized by water vapor to form solid silica. The protective silica is in turn volatilized by water vapor to form primarily gaseous Si(OH)4. Nonlinear least squares analysis and a paralinear kinetic model were used to determine both parabolic and linear rate constants from the kinetic data. Volatilization of the protective silica scale can result in accelerated consumption of Si3N4. Recession rates under conditions more representative of actual combustors are compared to the furnace data.

  3. Microstructure and Phase Composition of Cold Isostatically Pressed and Pressureless Sintered Silicon Nitride.

    PubMed

    Lukianova, O A; Krasilnikov, V V; Parkhomenko, A A; Sirota, V V

    2016-12-01

    The microstructure and physical properties of new Y2O3 and Al2O3 oxide-doped silicon nitride ceramics fabricated by cold isostatic pressing and free sintering were investigated. The phase composition of produced material was also studied by X-ray diffraction at room and elevated temperature. The fabricated ceramics featured a microstructure of Si5AlON7 grains with a fine-grained α-Si3N4 with a small amount of Y2SiAlON5. Described ceramics is attractive for many high-temperature structural applications due to beneficial combination of fine-grained structure with improved mechanical properties and small weight loss. PMID:26979726

  4. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

    PubMed

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  5. Diamond and diamondlike carbon as wear-resistant, self-lubricating coatings for silicon nitride

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1995-01-01

    Recent work on the friction and wear properties of as-deposited fine-grain diamond, polished coarse-grain diamond, and as-deposited diamondlike carbon (DLC) films in humid air at a relative humidity of approximately 40 percent and in dry nitrogen is reviewed. Two types of chemical vapor deposition (CVD) processes are used to deposit diamond films on silicon nitride (Si3N4) substrates: microwave-plasma and hot-filament. Ion beams are used to deposit DLC films of Si3N4 substrates. The diamond and DLC films in sliding contact with hemispherical bare Si3N4 pins have low steady-state coefficients of friction (less than 0.2) and low wear rates (less than 10(exp -7) mm(exp 2)/N-m), and thus, can be used effectively as wear-resistant, self-lubricating coatings for Si3N4 in the aforementioned two environments.

  6. Electromagnetically Induced Transparency and Wideband Wavelength Conversion in Silicon Nitride Microdisk Optomechanical Resonators

    NASA Astrophysics Data System (ADS)

    Liu, Yuxiang; Davanço, Marcelo; Aksyuk, Vladimir; Srinivasan, Kartik

    2013-05-01

    We demonstrate optomechanically mediated electromagnetically induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor (Q) of 106, and radial breathing mechanical modes with a Q=104 and a resonance frequency of 625 MHz, so that the system is in the resolved sideband regime. Placing a strong optical control field on the red (blue) detuned sideband of the optical mode produces coherent interference with a resonant probe beam, inducing a transparency (absorption) window for the probe. This is observed for multiple optical modes of the device, all of which couple to the same mechanical mode, and which can be widely separated in wavelength due to the large band gap of Si3N4. These properties are exploited to demonstrate frequency up-conversion and down-conversion of optical signals between the 1300 and 980 nm bands with a frequency span of 69.4 THz.

  7. Octave-spanning coherent supercontinuum generation in a silicon nitride waveguide.

    PubMed

    Johnson, Adrea R; Mayer, Aline S; Klenner, Alexander; Luke, Kevin; Lamb, Erin S; Lamont, Michael R E; Joshi, Chaitanya; Okawachi, Yoshitomo; Wise, Frank W; Lipson, Michal; Keller, Ursula; Gaeta, Alexander L

    2015-11-01

    We demonstrate the generation of a supercontinuum spanning more than 1.4 octaves in a silicon nitride waveguide using sub-100-fs pulses at 1 μm generated by either a 53-MHz, diode-pumped ytterbium (Yb) fiber laser or a 1-GHz, Yb:CaAlGdO(4) (Yb:CALGO) laser. Our numerical simulations show that the broadband supercontinuum is fully coherent, and a spectral interference measurement is used to verify that the supercontinuum generated with the Yb:CALGO laser possesses a high degree of coherence over the majority of its spectral bandwidth. This coherent spectrum may be utilized for optical coherence tomography, spectroscopy, and frequency metrology. PMID:26512533

  8. Steel bonded dense silicon nitride compositions and method for their fabrication

    DOEpatents

    Landingham, Richard L.; Shell, Thomas E.

    1987-01-01

    A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500.degree. C. in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850.degree. to 950.degree. C. in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

  9. Steel bonded dense silicon nitride compositions and method for their fabrication

    DOEpatents

    Landingham, R.L.; Shell, T.E.

    1985-05-20

    A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500/sup 0/C in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850/sup 0/ to 950/sup 0/C in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

  10. Microstructure and Phase Composition of Cold Isostatically Pressed and Pressureless Sintered Silicon Nitride

    NASA Astrophysics Data System (ADS)

    Lukianova, O. A.; Krasilnikov, V. V.; Parkhomenko, A. A.; Sirota, V. V.

    2016-03-01

    The microstructure and physical properties of new Y2O3 and Al2O3 oxide-doped silicon nitride ceramics fabricated by cold isostatic pressing and free sintering were investigated. The phase composition of produced material was also studied by X-ray diffraction at room and elevated temperature. The fabricated ceramics featured a microstructure of Si5AlON7 grains with a fine-grained α-Si3N4 with a small amount of Y2SiAlON5. Described ceramics is attractive for many high-temperature structural applications due to beneficial combination of fine-grained structure with improved mechanical properties and small weight loss.

  11. The utilization of microwave heating for the fabrication of sintered reaction-bonded silicon nitride

    SciTech Connect

    Kiggans, J.O.; Tiegs, T.N.; Lin, H.T.; Holcombe, C.E.

    1995-12-31

    The results of studies in which microwave heating was used to fabricate sintered reaction-bonded silicon nitride (SRBSN) are reviewed. These results are compared to parallel studies where conventional heating was used for the fabrication of these materials. Microwave fabrication of SRBSN involves a single heating cycle, whereas conventional processing requires two separate furnace runs and sample packaging steps. SRBSN containing high levels of sintering aids which were fabricated by microwave heating showed improved strength and toughness, as compared to those materials fabricated using a conventional resistance-heated furnace. An analysis of the microstructures of the microwave fabricated materials showed enhanced acicular grain growth as compared to conventionally heated material. Results are presented on studies involving the scale-up of the microwave fabrication process.

  12. Density functional study on electronic properties of P-doped spinel silicon carbon nitride

    SciTech Connect

    Zhang Yufen; Zhao Xian Cheng Xiufeng; Mu Yuguang

    2008-08-15

    We performed density functional calculations on the electronic properties of P-doped spinel silicon carbon nitride. When Si is replaced by C at the tetrahedral sites of P-doped c-Si{sub 3}N{sub 4}, the band gap can be adjusted, and an insulator-to-metal transition is predicted to occur at the C-to-Si ratio of 0.27. Finally, some possible examinations and potential applications for the large band-gap reduction are discussed. - Graphical abstract: We performed density functional calculations to predict the insulator-to-metal transition by replacing Si by C at the tetrahedral sites of P-doped c-Si{sub 3}N{sub 4}.

  13. Ultraflat and low dispersion in a horizontal silicon nitride slot waveguide at near-infrared wavelengths

    NASA Astrophysics Data System (ADS)

    Xu, Lijuan; Ni, Xiaochang; Liu, Bowen; Li, Yanfeng; Hu, Minglie

    2016-03-01

    A strip/slot hybrid horizontal silicon nitride slot waveguide is designed to provide an ultraflat and low dispersion. By optimizing the height and width of the structure, an ultraflat and low dispersion of ˜0±7 ps/nm/km over 812 nm wavelength range (from 1137 to 1949 nm) can be achieved. The waveguide with a 20-nm conformal overlayer has chromatic dispersion within ±1 ps/nm/km over 682-nm bandwidth. So the flatness is 0.0015, which is the lowest flatness in near-infrared regime of this kind of waveguide to our knowledge. The influence of the waveguide sidewall to dispersion is also discussed.

  14. Fano resonances in a multimode waveguide coupled to a high-Q silicon nitride ring resonator.

    PubMed

    Ding, Dapeng; de Dood, Michiel J A; Bauters, Jared F; Heck, Martijn J R; Bowers, John E; Bouwmeester, Dirk

    2014-03-24

    Silicon nitride (Si3N4) optical ring resonators provide exceptional opportunities for low-loss integrated optics. Here we study the transmission through a multimode waveguide coupled to a Si3N4 ring resonator. By coupling single-mode fibers to both input and output ports of the waveguide we selectively excite and probe combinations of modes in the waveguide. Strong asymmetric Fano resonances are observed and the degree of asymmetry can be tuned through the positions of the input and output fibers. The Fano resonance results from the interference between modes of the waveguide and light that couples resonantly to the ring resonator. We develop a theoretical model based on the coupled mode theory to describe the experimental results. The large extension of the optical modes out of the Si3N4 core makes this system promising for sensing applications. PMID:24664026

  15. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    PubMed Central

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  16. Identification of light elements in silicon nitride by aberration-corrected scanning transmission electron microscopy.

    PubMed

    Idrobo, Juan C; Walkosz, Weronika; Klie, Robert F; Oğüt, Serdar

    2012-12-01

    In silicon nitride structural ceramics, the overall mechanical and thermal properties are controlled by the atomic and electronic structures at the interface between the ceramic grains and the amorphous intergranular films (IGFs) formed by various sintering additives. In the last ten years the atomic arrangements of heavy elements (rare-earths) at the Si(3)N(4)/IGF interfaces have been resolved. However, the atomic position of light elements, without which it is not possible to obtain a complete description of the interfaces, has been lacking. This review article details the authors' efforts to identify the atomic arrangement of light elements such as nitrogen and oxygen at the Si(3)N(4)/SiO(2) interface and in bulk Si(3)N(4) using aberration-corrected scanning transmission electron microscopy. PMID:22726263

  17. Structural Evolution of Silicon Oxynitride Fiber Reinforced Boron Nitride Matrix Composite at High Temperatures

    NASA Astrophysics Data System (ADS)

    Zou, Chunrong; Li, Bin; Zhang, Changrui; Wang, Siqing; Xie, Zhengfang; Shao, Changwei

    2016-02-01

    The structural evolution of a silicon oxynitride fiber reinforced boron nitride matrix (Si-N-Of/BN) wave-transparent composite at high temperatures was investigated. When heat treated at 1600 °C, the composite retained a favorable bending strength of 55.3 MPa while partially crystallizing to Si2N2O and h-BN from the as-received amorphous structure. The Si-N-O fibers still performed as effective reinforcements despite the presence of small pores due to fiber decomposition. Upon heat treatment at 1800 °C, the Si-N-O fibers already lost their reinforcing function and rough hollow microstructure formed within the fibers because of the accelerated decomposition. Further heating to 2000 °C led to the complete decomposition of the reinforcing fibers and only h-BN particles survived. The crystallization and decomposition behaviors of the composite at high temperatures are discussed.

  18. Single asperity tribochemical wear of silicon nitride studied by atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Maw, W.; Stevens, F.; Langford, S. C.; Dickinson, J. T.

    2002-11-01

    Nanometer scale single asperity tribochemical wear of silicon nitride was examined by measuring the wear of atomic force microscope tips translated against a variety of substrates in aqueous solutions. We show that the chemical nature of the substrate plays an important role: significant wear was observed only when the substrate surface is populated with appropriate metal-hydroxide bonds. Mica and calcite substrates, whose water-exposed cleavage surfaces lack these bonds, produced little if any tip wear. As a function of contact force FN and scan duration t, the length of the tips in this work decreases approximately as (FN)t0.5. We propose that pressure-induced intermediate states involving hydroxyl groups form on both the tip and the substrate; chemical reactions subsequently form transient bridging chemical bonds that are responsible for tip wear.

  19. Redistribution of a grain-boundary glass phase during creep of silicon nitride ceramics

    SciTech Connect

    Jin, Q.; Ning, X.G.; Wilkinson, D.S.; Weatherly, G.C.

    1997-03-01

    The compressive creep behavior of a high-purity silicon nitride ceramic with and without the addition of Ba was studied at 1,400 C. Two distinct creep stages were observed during high-temperature deformation of both materials. Transmission electron microscopy (TEM) has been used to characterize the intergranular glass film thickness. Statistical analysis of a number of grain-boundary films indicates that the film thickness is confined to a narrow range in the as-sintered materials. However, the mean thickness is greater in the Ba-doped ceramic than in the undoped material. The standard deviation of the film thickness of a given material is considerably larger after creep than before. The authors conclude that the grain-boundary glass phase is redistributed during creep, suggesting that viscous flow of the glass phase is responsible for the first stage of the creep process.

  20. Observation of ultraslow stress release in silicon nitride films on CaF{sub 2}

    SciTech Connect

    Guo, Tianyi; Deen, M. Jamal; Xu, Changqing; Fang, Qiyin; Selvaganapathy, P. Ravi; Zhang, Haiying

    2015-07-15

    Silicon nitride thin films are deposited by plasma-enhanced chemical vapor deposition on (100) and (111) CaF{sub 2} crystalline substrates. Delaminated wavy buckles formed during the release of internal compressive stress in the films and the stress releasing processes are observed macroscopically and microscopically. The stress release patterns start from the substrate edges and propagate to the center along defined directions aligned with the crystallographic orientations of the substrate. The stress releasing velocity of SiN{sub x} film on (111) CaF{sub 2} is larger than that of SiN{sub x} film with the same thickness on (100) CaF{sub 2}. The velocities of SiN{sub x} film on both (100) and (111) CaF{sub 2} increase with the film thickness. The stress releasing process is initiated when the films are exposed to atmosphere, but it is not a chemical change from x-ray photoelectron spectroscopy.

  1. Design Evaluation Using Finite Element Analysis of Cooled Silicon Nitride Plates for a Turbine Blade Application

    NASA Technical Reports Server (NTRS)

    Abdul-Aziz, Ali; Baaklini, George Y.; Bhatt, Ramakrishna T.

    2001-01-01

    Two- and three-dimensional finite element analyses were performed on uncoated and thermal barrier coated (TBC) silicon nitride plates with and without internal cooling by air. Steady-state heat-transfer analyses were done to optimize the size and the geometry of the cooling channels to reduce thermal stresses, and to evaluate the thermal environment experienced by the plate during burner rig testing. The limited experimental data available were used to model the thermal profile exerted by the flame on the plate. Thermal stress analyses were performed to assess the stress response due to thermal loading. Contours for the temperature and the representative stresses for the plates were generated and presented for different cooling hole sizes and shapes. Analysis indicates that the TBC experienced higher stresses, and the temperature gradient was much reduced when the plate was internally cooled by air. The advantages and disadvantages of several cooling channel layouts were evaluated.

  2. CHARACTERIZATION OF MECHANICAL PERFORMANCE OF NT154 SILICON NITRIDE MICROTRUBINE ROTORS

    SciTech Connect

    Lin, Hua-Tay; Ferber, Mattison K; Waters, Shirley B; Kirkland, Timothy Philip

    2006-01-01

    This paper summarizes the results on recent component characterization efforts carried out to verify the mechanical reliability of NT154 silicon nitride microturbine rotors manufactured by Saint-Gobain. Mechanical properties of biaxial discs machined from airfoil as well as hub region of microturbine rotors were evaluated by a ball-on-ring test technique. Results showed that the mechanical properties of specimens from airfoils with as-processed surfaces exhibited lower characteristic strength than those machined from the hub region with as-machined surfaces. The differences in mechanical performance and reliability between as-processed components and simple-shaped test coupons appear to arise mainly from differences in strength limiting flaw type and microstructure verified by detailed electron microscopy analysis.

  3. Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films

    SciTech Connect

    Nguyen, P. D.; Sunding, M. F.; Vestland, L. O.; Finstad, T. G.; Olsen, A.; Kepaptsoglou, D. M.; Ramasse, Q. M.

    2012-10-01

    The atomic structure and optical properties of Si-rich silicon nitride thin films have been for decades the subject of intense research, both theoretically and experimentally. It has been established in particular that modifying the chemical composition of this material (e.g., the Si excess concentration) can lead to dramatic differences in its physical, optical, and electrical properties. The present paper reports on how the incorporation of oxygen into silicon nitride networks influences their chemical bonding and photoluminescence properties. Here, by using a combination of analytical scanning transmission electron microscopy and x-ray photoelectron spectroscopy it is demonstrated that the structure of Si-rich silicon nitride with low O content can be described by the co-existence of Si nanocrystals in a Si{sub 3}N{sub 4} matrix, with occasional localized nano-regions of a Si{sub 2}ON{sub 2} phase, depending on the amount of excess Si. Furthermore, it is shown that the structure of silicon nitride with high O content can be adequately described by a so-called random bonding model, according to which the material consists in bonded networks of randomly distributed tetrahedral SiO{sub x}N{sub 4-x} (where x = 0, 1, 2, 3, and 4). Photoluminescence measurements indicate that the effect of O is to introduce a gap state in the band gap of Si{sub 3}N{sub 4} matrix. When a large amount of O is introduced, on the other hand, the photoluminescence measurements are in agreement with a shifted conduction band minimum in the dielectric. For both cases (high and low O content), Si dangling bonds were found to give rise to the deep level in the band gap of the nitride matrix, causing the dominant emission band in the photoluminescence of the films.

  4. Silicon Nitride Plates for Turbine Blade Application: FEA and NDE Assessment

    NASA Technical Reports Server (NTRS)

    Abdul-Aziz, Ali; Baaklini, George Y.; Bhatt, Ramakrishna T.

    2001-01-01

    Engine manufacturers are continually attempting to improve the performance and the overall efficiency of internal combustion engines. The thermal efficiency is typically improved by raising the operating temperature of essential engine components in the combustion area. This reduces the heat loss to a cooling system and allows a greater portion of the heat to be used for propulsion. Further improvements can be achieved by diverting part of the air from the compressor, which would have been used in the combustor for combustion purposes, into the turbine components. Such a process is called active cooling. Increasing the operating temperature, decreasing the cooling air, or both can improve the efficiency of the engine. Furthermore, lightweight, strong, tough hightemperature materials are required to complement efficiency improvement for nextgeneration gas turbine engines that can operate with minimum cooling. Because of their low-density, high-temperature strength, and thermal conductivity, ceramics are being investigated as potential materials for replacing ordinary metals that are currently used for engine hot section components. Ceramic structures can withstand higher operating temperatures and other harsh environmental factors. In addition, their low densities relative to metals helps condense component mass (ref. 1). The objectives of this program at the NASA Glenn Research Center are to develop manufacturing technology, a thermal barrier coating/environmental barrier coating (TBC/EBC), and an analytical modeling capability to predict thermomechanical stresses, and to do minimal burner rig tests of silicon nitride (Si3N4) and SiC/SiC turbine nozzle vanes under simulated engine conditions. Furthermore, and in support of the latter objectives, an optimization exercise using finite element analysis and nondestructive evaluation (NDE) was carried out to characterize and evaluate silicon nitride plates with cooling channels.

  5. Luminescence mechanism for Er3+ ions in a silicon-rich nitride host under electrical pumping

    NASA Astrophysics Data System (ADS)

    Berencén, Y.; Illera, S.; Rebohle, L.; Ramírez, J. M.; Wutzler, R.; Cirera, A.; Hiller, D.; Rodríguez, J. A.; Skorupa, W.; Garrido, B.

    2016-03-01

    A combined experimental and theoretical study on the electroluminescent excitation mechanism for trivalent erbium (Er3+) ions in a silicon-rich nitride (SiN x ) host is presented. Direct impact by hot electrons is demonstrated to be the fundamental excitation mechanism. The Er3+ excitation by energy transfer from silicon nanostructures and/or defects is shown to be marginal under electrical pumping. A bilayer structure made of a SiO2 electron-accelerating layer and an Er-implanted SiN x layer has been sandwiched between a metal-insulator-semiconductor structure with a highly doped N-type silicon substrate and an indium-tin-oxide window functioning as a transparent electrode. Monte Carlo (MC) simulations are used to model hot electron transport in the proposed device structure. Acoustic, polar and non-polar optical electron-phonon scattering mechanisms are considered as well as a new scattering process related to the trapping/detrapping on energetically shallow traps in the band gap of silicon nitride. For SiO2 layers around 20 nm-thick and beyond, the number and kinetic energy of hot electrons before entering the SiN x layer are maximal. A significant enhancement of the 1.54 μm electroluminescence power efficiency of two orders of magnitude is observed in devices composed of a 20 nm-thick SiO2 layer compared to those composed of 10 nm-thick SiO2. We demonstrate by MC simulations that such a difference, in terms of power efficiency, is ascribed to the high-energy tail of the hot electron energy distribution, which becomes more pronounced as the SiO2 electron-accelerating layer thickness increases. It is also unveiled that direct excitation of the 1.54 μm Er3+ main radiative transition requiring an excitation energy of only 0.8 eV is inefficient, and that the major part of the Er3+ ions are excited via higher level energy states. The obtained results are sufficiently consistent to be extended to other trivalent rare-earth ions inside similar insulating material

  6. Atomic resolution transmission electron microscopy of the intergranular structure of a Y{sub 2}O{sub 3}-silicon nitride ceramic

    SciTech Connect

    Ziegler, A.; Kisielowski, C.; Hoffmann, M.J.; Ritchie, R.O.

    2002-05-01

    High-resolution transmission electron microscopy (HRTEM) employing focus-variation phase-reconstruction methods is used to image the atomic structure of grain boundaries in a silicon nitride ceramic at a resolution of 0.8 Angstrom

  7. Alkali-Resistant Mechanism of a Hollandite DeNOx Catalyst.

    PubMed

    Hu, Pingping; Huang, Zhiwei; Gu, Xiao; Xu, Fei; Gao, Jiayi; Wang, Yue; Chen, Yaxin; Tang, Xingfu

    2015-06-01

    A thorough understanding of the deactivation mechanism by alkalis is of great importance for rationally designing improved alkali-resistant deNOx catalysts, but a traditional ion-exchange mechanism cannot often accurately describe the nature of the deactivation, thus hampering the development of superior catalysts. Here, we establish a new exchange-coordination mechanism on the basis of the exhaustive study on the strong alkali resistance of a hollandite manganese oxide (HMO) catalyst. A combination of isothermal adsorption measurements of ammonia with X-ray absorption near-edge structure spectra and X-ray photoelectron spectra reveals that alkali metal ions first react with protons from Brønsted acid sites of HMO via the ion exchange. Synchrotron X-ray diffraction patterns and extended X-ray absorption fine structure spectra coupled with theoretical calculations demonstrate that the exchanged alkali metal ions are subsequently stabilized at size-suitable cavities in the HMO pores via a coordination model with an energy savings. This exchange-coordination mechanism not only gives a wholly convincing explanation for the intrinsic nature of the deactivation of the reported catalysts by alkalis but also provides a strategy for rationally designing improved alkali-resistant deNOx catalysts in general. PMID:25941972

  8. Effect of nitridation surface treatment on silicon (1 1 1) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD

    NASA Astrophysics Data System (ADS)

    Rahman, Mohd Nazri Abd.; Yusuf, Yusnizam; Mansor, Mazwan; Shuhaimi, Ahmad

    2016-01-01

    A single-crystalline with high quality of gallium nitride epilayers was grown on silicon (1 1 1) substrate by metal organic chemical vapor deposition. The process of nitridation surface treatment was accomplished on silicon (1 1 1) substrate by flowing the ammonia gaseous. Then, it was followed by a thin aluminum nitride nucleation layer, aluminum nitride/gallium nitride multi-layer and a thick gallium nitride epilayer. The influence of in situ nitridation surface treatment on the crystallinity quality of gallium nitride epilayers was studied by varying the nitridation times at 40, 220 and 400 s, respectively. It was shown that the nitridation times greatly affect the structural properties of the grown top gallium nitride epilayer on silicon (1 1 1) substrate. In the (0 0 0 2) and (1 0 1 bar 2) X-ray rocking curve analysis, a narrower value of full width at half-maximum has been obtained as the nitridation time increased. This is signifying the reduction of dislocation density in the gallium nitride epilayer. This result was supported by the value of bowing and root mean square roughness measured by surface profilometer and atomic force microscopy. Furthermore, a crack-free gallium nitride surface with an abrupt cross-sectional structure that observed using field effect scanning electron microscopy was also been obtained. The phi-scan curve of asymmetric gallium nitride proved the top gallium nitride epilayer exhibited a single-crystalline structure.

  9. Selective silicon nanoparticle growth on high-density arrays of silicon nitride

    NASA Astrophysics Data System (ADS)

    Coffee, Shawn S.; Shahrjerdi, Davood; Banerjee, Sanjay K.; Ekerdt, John G.

    2007-10-01

    Selective silicon nanoparticle deposition from disilane on ˜17 nm diameter Si 3N 4 features defined through a 15-nm-thick SiO 2 masking layer was studied using hot wire chemical vapor deposition between 900 and 1025 K, and chemical vapor deposition between 900 and 975 K. Thin film poly(styrene-b-methyl methacrylate) diblock copolymer was used to generate cylinders with a density of 6×10 10 cm -2 that served as the patterning template. Silicon adatom etching of SiO 2 and diffusion of adatoms to the Si 3N 4 regions prevented the accumulation of adatoms necessary for nanoparticle nucleation and growth on the SiO 2 surfaces. Nanoparticles form selectively on Si 3N 4, because adsorbed Si does not etch this surface. Incident flux, total exposure, and substrate temperature were adjusted to explore nanoparticle deposition trends relating relative adatom concentration with nanoparticle density and size distributions.

  10. Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

    NASA Astrophysics Data System (ADS)

    Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku

    2014-01-01

    Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n+-polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage (Vt) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal-oxide-nitride-oxide-silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n+-poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial Vt roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length (Lg) is scaled down to 46 nm or less.

  11. Thermal stability of boron nitride/silicon p-n heterojunction diodes

    SciTech Connect

    Teii, Kungen Mizusako, Yusei; Hori, Takuro; Matsumoto, Seiichiro

    2015-10-21

    Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp{sup 2}-bonded BN (sp{sup 2}BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 10{sup 5} at room temperature by optimizing the thickness of the sp{sup 2}BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp{sup 2}BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.

  12. Thermal stability of boron nitride/silicon p-n heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Teii, Kungen; Mizusako, Yusei; Hori, Takuro; Matsumoto, Seiichiro

    2015-10-01

    Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp2-bonded BN (sp2BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 105 at room temperature by optimizing the thickness of the sp2BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp2BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.

  13. Far IR Transmission Characteristics of Silicon Nitride Films using Fourier Transform Spectroscopy

    NASA Astrophysics Data System (ADS)

    Ferrusca, D.; Castillo-Domínguez, E.; Velázquez, M.; Hughes, D.; Serrano, A.; Torres-Jácome, A.

    2009-12-01

    We are fabricating amorphous Silicon (a-Si) bolometers doped with boron with a measured NEP˜1.5×10-16 W/Hz1/2 suitable for use in millimeter and sub-millimeter astronomy. In this paper we present the preliminary results of the absorber optimization for the a-Si bolometers. A film of Silicon Nitride (SiN), deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process at INAOE, with or without metallic coating is used as a weak thermal link to the heat sink as well as an absorber. We have measured the transmission spectrum of thin films of SiN in the range of 200 to 1000 GHz using Fourier Transform Spectroscopy (FTS) and a bolometric system with a NEP˜1.26×10-13. The transmission of thin films of SiN with a thickness of 0.4 μn has been measured at temperatures of 290 K and 4 K. The uncoated SiN films have a transmission of 80% and we expect a 50% transmission for the metallic (e.g. Titanium) coated films.

  14. Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence

    NASA Astrophysics Data System (ADS)

    Vereecke, G.; Arnauts, S.; Van Doorne, P.; Kenis, K.; Onsia, B.; Verstraeten, K.; Schaekers, M.; Van Hoeymissen, J. A. B.; Heyns, M. M.

    2001-11-01

    The validity of a matrix withdrawal method for the analysis of trace metals in silicon nitride films on silicon wafers by total-reflection X-ray fluorescence has been evaluated with samples contaminated with diluted standard solutions of eight metals (Ca, V, Cr, Fe, Ni, Cu, Ta, W). The nitride matrix was removed by a decomposition step with HF vapor at ambient conditions followed by the vaporization of the product at a temperature higher than 240°C. The recovery of added metals was determined first directly after vaporization and secondly after preconcentration by the droplet collection (DC) method. The recovery of metals after vaporization at a temperature of 300±50°C was generally close to 100%, except for Cu whose recovery was approximately 40%. The efficiency of the DC step was approximately 50% for most metals but only 10-20% for Cu and Cr. Thus for most metals the total recovery was close to 50%, which is acceptable for analytical purpose. The recovery of Cu and Cr was studied in more detail considering the influence of the thickness of the nitride film, the vaporization temperature, and the composition of the DC solution. The total recovery of Cu increased from approximately 10 to 40% by lowering the temperature of the vaporization step and using a more concentrated DC solution. The recovery of Cr by DC was markedly influenced by the thickness of the nitride film with no great benefit of using a more concentrated DC solution.

  15. The effect of pressureless densification on mechanical and tribological properties of fine-grained silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Pawlik, T.; Sopicka-Lizer, M.; Wieczorek, J.

    2012-05-01

    The paper presents a new economic method of silicon nitride ceramic preparation for high wear resistant applications as sealing valves or the brake pad lining. The excellent mechanical properties and wear resistance of the resultant ceramic were improved by reduction of silicon nitride grain size to the one-two micrometer level as a result of mechanochemical processing and special procedure of compact densification. All experiments were conducted on specimens prepared from α-Si3N4-AlN-Y2O3 powders with application of mechanochemical processing (MCP). The chosen specimens were tested for hardness, elastic modulus, bending strength and wear resistance. The results showed mechanical properties in the range of hot-pressed ceramics and superior wear resistance due to micrometer-sized β-Si3N4 grains.

  16. Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Huang, Jung-Jie; Liu, Chan-Jui; Lin, Hung-Chien; Tsai, Cheng-Ju; Chen, Yung-Pei; Hu, Guo-Ren; Lee, Cheng-Chung

    2008-12-01

    Influences of silicon nitride (SiNx) films on the electrical performances of hydrogenated amorphous silicon thin film transistors (a-Si : H TFTs) are studied. Relatively low temperature (200 °C) SiNx films are prepared by plasma enhanced chemical vapour deposition at different radio-frequency powers. Results indicate that the SiNx films at a radio-frequency power of 340 W (Power density = 1.96 × 10-1 W cm-2) are near-stoichiometric and have better interface quality. Therefore, a-Si : H TFTs with this SiNx gate dielectric layer have a high field effect mobility and sustain the bias stress. The field effect mobility is 0.59 cm2 V-1 s-1 and the threshold voltage shift after a constant voltage stress (CVS) for 2.8 h is 3.18 V. The electrical degradation mechanism of a-Si : H TFTs is studied from the capacitance-voltage measurement. The degradation of the a-Si : H TFT after CVS is due to the defect generation in the SiNx gate dielectric and a-Si : H active layers. However, when the surface roughness of the SiNx film is poor, the degradation from the a-Si : H/SiNx interface is predominated. Therefore, if the SiNx film is used as a gate dielectric layer to fabricate a-Si : H TFTs, the surface roughness and chemical composition of the SiNx film should be considered simultaneously.

  17. Characterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channels

    NASA Astrophysics Data System (ADS)

    Thomas, R.; Benoit, D.; Clément, L.; Morin, P.; Cooper, D.; Bertin, F.

    2011-11-01

    In order to reach high levels of transistor performance, it is desirable to increase electrical conductivity of the device. An efficient way to enhance carrier mobility in the conduction channel is to generate strain in the structure using process-induced stress. To achieve that, stress engineering of the contact etch stop layer (CESL), an amorphous hydrogenated silicon nitride film deposited by plasma enhanced chemical vapour deposition on top of the metal oxide semiconductor assembly, is widely used since it is a low-cost technique. Indeed, this film possesses an intrinsic stress that can be set from tensile (σ = 1.6 GPa) to compressive (σ = -3.0 GPa) depending on deposition conditions. From an electrical point of view, strain induced in the silicon channel can lead to an increase of carrier mobility as high as 8-10% which in turn increases Ion/Ioff and decreases switching time of the transistor. Usually, strain induced in the channel is very low (0.1-0.3%), making quantitative measurements challenging. Moreover, stress transmission mechanisms are not fully understood at the nano-metre scale. To evaluate stress transmission in the silicon channel, we used dark-field electron holography characterization technique operating on both the Titan and Tecnai F20 transmission electron microscopes. Strain maps with nanometre spatial resolution, high sensitivity (Δɛ≈10-3%) and large field of view (400-500 nm2) have been obtained on CESL strained devices. In order to understand stress transfer mechanisms, we have analysed structures with varying spacing between patterns. The experimental results are compared to those obtained by 2-D finite elements analysis simulation.

  18. Development of silicon nitride rotors for the ATTAP program at Garrett Ceramic Components. [Advanced Turbine Technology Applications Project

    NASA Technical Reports Server (NTRS)

    Busovne, B. J., Jr.; Pollinger, J. P.

    1991-01-01

    The development and fabrication of reliable high temperature-high strength silicon nitride rotors by Garrett Ceramic Components (GCC) for the Advanced Turbine Technology Applications Project (ATTAP) is discussed. GCC's progress will be presented, including mechanical properties characterization, in-process monitoring development, and extensive NDE analysis. The current status of material, process, and part properties of the rotors being developed will be compared to properties required for implementation and successful operation of advanced gas turbine engines at 2500 F.

  19. The effects of microstructure on the high temperature mechanical behavior of a self-reinforced, hot-pressed silicon nitride

    NASA Astrophysics Data System (ADS)

    Boling-Risser, Martha Ann

    It has long been recognized that silicon nitride has potential for use in high temperature structural applications. Previous studies on silicon nitride have focused on either high temperature failure mechanisms or on high temperature deformation, but no work has concentrated on integrating the two types of mechanisms. Neither has any study examined the effect of microstructure on high temperature failure and deformation mechanisms. The present study focused on using an examination of the effect of microstructure on the high temperature failure and deformation mechanisms as a means for integrating the mechanical behavior. The material used in this study was a self-reinforced, hot-pressed silicon nitride produced by Dow Chemical, USA. Samples with a range of microstructures were fabricated through a post-processing heat treatment. The room temperature mechanical behavior was unchanged by the heat treatment. The high temperature failure mechanisms were examined through the use of indentation controlled flexure tests. Increases in temperature above 1300sp°C led to a transition from fast fracture failure to slow crack growth and creep rupture failure. High temperature deformation mechanisms were explored through the use of compressive creep tests. At temperatures above 1575sp°C, deformation proceeds by solution-precipitation grain boundary sliding. At intermediate temperatures of 1450sp°C to 1525sp°C, an alternate deformation mechanism of grain boundary sliding accommodated by viscous flow of the grain boundary phase becomes active until the silicon nitride grains interlock. Damage at all temperatures developed in the form of pockets located at the two-grain junctions which were similar in shape to cavitation voids, but were filled with grain boundary phase material. A model has been developed integrating failure and deformation mechanisms which demonstrates the dependence of intermediate temperature deformation rates on the volume fraction of grain boundary surface

  20. Foreign Object Damage in Disks of Two Gas-turbine-grade Silicon Nitrides by Steel Ball Projectiles at Ambient Temperature

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

    2003-01-01

    Foreign object damage (FOD) behavior of two commercial gas-turbine-grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through postimpact strength testing of disks impacted by steel ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (k(sub Ic)). The critical impact velocity V(sub c) for which the corresponding postimpact strength was the lowest was V(sub c) approximately equal to 440 and 300 m/s AS800 and SN282, respectively. A unique lower strength regime was typified for both silicon nitrides depending on impact velocity and was attributed to significant radial cracking. The damage generated by projectile impact was typically in the form of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike the thick (4 millimeters) flexure bar specimens used in our previous studies, the thin (2 millimeter) disk target specimen exhibited a unique back-side radial cracking on the reverse side just beneath the impact sites at and above impact velocities of 160 meters per second for SN282 and 220 meters per second AS800.

  1. Artifact level produced by different femoral head prostheses in CT imaging: diamond coated silicon nitride as total hip replacement material.

    PubMed

    Rodrigues, Simone P; Paiva, José M; De Francesco, Silvia; Amaral, Margarida I; Oliveira, Filipe J; Silva, Rui F

    2013-01-01

    Commercial femoral head prostheses (cobalt-chromium alloy, yttria partially stabilized zirconia (Y-PSZ) and alumina) and new silicon nitride ceramic ones (nanocrystalline diamond coated and uncoated) were compared in terms of artifact level production by computed tomography (CT). Pelvis examination by CT allows the correct diagnosis of some pathologies (e.g. prostate and colon cancer) and the evaluation of the prosthesis-bone interface in post-operative joint surgery. Artifact quantification is rarely seen in literature despite having a great potential to grade biomaterials according to their imaging properties. Materials' characteristics (density and effective atomic number), size and geometry of the prostheses can cause more or less artifact. A quantification procedure based on the calculation of four statistical parameters for the Hounsfield pixel values (mean, standard deviation, mean squared error and worst case error) is presented. CT sequential and helical scanning modes were performed. Results prove the artifact reproducibility and indicate that the cobalt-chromium and Y-PSZ are the most artifact-inducing materials, while alumina and silicon nitride (diamond coated and uncoated) ceramic ones present a low level of artifact. Considering the excellent biocompatibility and biotribological behaviour reported in earlier works, combined with the high medical imaging quality here assessed, diamond coated silicon nitride ceramics are arising as new materials for joint replacement. PMID:23053807

  2. Molecular dynamic simulations of the intergranular films between alumina and silicon nitride crystal grains

    NASA Astrophysics Data System (ADS)

    Zhang, Shenghong

    The intergranular films (IGFs) between the ceramics grains have very important effects on the structure and mechanical properties on the whole ceramics and have been studied for many decades. In the thesis, molecular dynamic (MD) computer simulations were applied to study the IGFs between the alumina and silicon nitride ceramic grains. Preferential adsorption of specific ions from the IGFs to the contacting surfaces of the alumina crystals was observed in the study of calcium-alumino-silicate glassy (CAS) IGFs formed between the combined basal and prism orientations of alpha-Al2O3 crystals. This segregation of specific ions to the interface enables formation of localized, ordered structures between the IGF and the crystals. However, the segregation behavior of the ions is anisotropic, depending on the orientation of the alpha-Al2O 3 crystals. Self-diffusion of calcium ions between these CAS IGFs was also carried out by MD simulations. The results show that the diffusion coefficients adjacent to the interfaces are smaller and the activation energies are much higher than those in the interior of the IGF and in bulk glasses. It was also suggested that Ca transport is mainly though the interior of the IGF and implies that diffusion would be significantly inhibited by sufficiently thin IGFs. The growth of the alumina ceramic grains was simulated in the contacting with IGFs containing high concentrations of aluminum ions. Five different compositions in the IGFs were studied. Results show preferential growth along the [1120] of the (1120) surface in comparison to growth along the [0001] direction on the (0001) surface for compositions near a Ca/Al ratio of 0.5. The simulations also show the mechanism by which Ca ions in the IGF inhibit growth on the basal surface. The simulations provide an atomistic view of attachment onto crystal surfaces, affecting grain growth in alumina. The dissolution of the alumina crystal grains in the silicate melts is another important issue in

  3. High-temperature mixed oxidation of nitride-bonded silicon carbide in oxidizing gas mixtures containing 2% Cl{sub 2}

    SciTech Connect

    Park, C.; McNallan, M.J.

    1995-04-01

    Nitride-bonded silicon carbide ceramics have lower processing costs than many other SiC-based ceramics and adequate properties for use as high-temperature heat exchangers in oxidizing environments. Silicon nitride has much better resistance to attack by chlorine at temperatures above 900 C than silicon carbide. When nitride bonded silicon carbide ceramics are exposed to gas mixtures containing 2% Cl{sub 2} and small amounts of oxygen in this temperature range, the SiC is selectively chlorinated, leaving behind a porous matrix of silicon nitride. The rate of corrosion is controlled by a combination of interfacial kinetics at the surfaces of the SiC grains and transport of volatile species through the silicon nitride skeleton. In more oxidizing environments, the rate of chlorination is suppressed by the formation of a protective SiO{sub 2} film. In more oxidizing environments at temperatures in excess of 1,200 C, the formation of volatile chloride reaction products at the interface between the SiC and the passivating SiO{sub 2} layer causes bubbles to form in the SiO{sub 2}, which accelerates the oxidation.

  4. Development of an aluminum nitride-silicon carbide material set for high-temperature sensor applications

    NASA Astrophysics Data System (ADS)

    Griffin, Benjamin A.; Habermehl, Scott D.; Clews, Peggy J.

    2014-06-01

    A number of important energy and defense-related applications would benefit from sensors capable of withstanding extreme temperatures (>300°C). Examples include sensors for automobile engines, gas turbines, nuclear and coal power plants, and petroleum and geothermal well drilling. Military applications, such as hypersonic flight research, would also benefit from sensors capable of 1000°C. Silicon carbide (SiC) has long been recognized as a promising material for harsh environment sensors and electronics because it has the highest mechanical strength of semiconductors with the exception of diamond and its upper temperature limit exceeds 2500°C, where it sublimates rather than melts. Yet today, many advanced SiC MEMS are limited to lower temperatures because they are made from SiC films deposited on silicon wafers. Other limitations arise from sensor transduction by measuring changes in capacitance or resistance, which require biasing or modulation schemes that can with- stand elevated temperatures. We are circumventing these issues by developing sensing structures directly on SiC wafers using SiC and piezoelectric aluminum nitride (AlN) thin films. SiC and AlN are a promising material combination due to their high thermal, electrical, and mechanical strength and closely matched coefficients of thermal expansion. AlN is also a non-ferroelectric piezoelectric material, enabling piezoelectric transduction at temperatures exceeding 1000°C. In this paper, the challenges of incorporating these two materials into a compatible MEMS fabrication process are presented. The current progress and initial measurements of the fabrication process are shown. The future direction and the need for further investigation of the material set are addressed.

  5. Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability.

    PubMed

    Kim, Kyeong Heon; Kim, Su Jin; Lee, Tae Ho; Lee, Byeong Ryong; Kim, Tae Geun

    2016-08-01

    Transparent conductive electrodes with good conductivity and optical transmittance are an essential element for highly efficient light-emitting diodes. However, conventional indium tin oxide and its alternative transparent conductive electrodes have some trouble with a trade-off between electrical conductivity and optical transmittance, thus limiting their practical applications. Here, we present silicon nitride transparent conductive electrodes with conducting filaments embedded using the electrical breakdown process and investigate the dependence of the conducting filament density formed in the transparent conductive electrode on the device performance of gallium nitride-based vertical light-emitting diodes. Three gallium nitride-on-silicon-based vertical light-emitting diodes using silicon nitride transparent conductive electrodes with high, medium, and low conducting filament densities were prepared with a reference vertical light-emitting diode using metal electrodes. This was carried to determine the optimal density of the conducting filaments in the proposed silicon nitride transparent conductive electrodes. In comparison, the vertical light-emitting diodes with a medium conducting filament density exhibited the lowest optical loss, direct ohmic behavior, and the best current injection and distribution over the entire n-type gallium nitride surface, leading to highly reliable light-emitting diode performance. PMID:27505739

  6. Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides

    NASA Astrophysics Data System (ADS)

    Navarro-Urrios, D.; Ramírez, J. M.; Capuj, N. E.; Berencén, Y.; Garrido, B.; Tredicucci, A.

    2015-09-01

    We demonstrate the integration of Nd3+ doped barium-titanium-silicate microsphere lasers with a silicon nitride photonic platform. Devices with two different geometrical configurations for extracting the laser light to buried waveguides have been fabricated and characterized. The first configuration relies on a standard coupling scheme, where the microspheres are placed over strip waveguides. The second is based on a buried elliptical geometry whose working principle is that of an elliptical mirror. In the latter case, the input of a strip waveguide is placed on one focus of the ellipse, while a lasing microsphere is placed on top of the other focus. The fabricated elliptical geometry (ellipticity = 0.9) presents a light collecting capacity that is 50% greater than that of the standard waveguide coupling configuration and could be further improved by increasing the ellipticity. Moreover, since the dimensions of the spheres are much smaller than those of the ellipses, surface planarization is not required. On the contrary, we show that the absence of a planarization step strongly damages the microsphere lasing performance in the standard configuration.

  7. Fabrication and characterization of silicon nitride directional coupler interferometer for sensing aptamer hybridization

    NASA Astrophysics Data System (ADS)

    Okubo, K.; Uchiyamada, K.; Yokokawa, M.; Asakawa, K.; Suzuki, H.

    2016-03-01

    We used silicon nitride (Si3N4) directional coupler (DC) interferometers to fabricate evanescent field biosensors for detection of aptamer hybridization. The DC detects temporal changes in refractive index (RI) as changes in the relative intensities of near-fields. Numerical simulation provided information for sensitivity of the DC as well as preferable dimensions of single mode waveguides. The result suggests that lengthening the DC improves its sensitivity. Another approach to realize high sensitivity was to make the coupling region of the DC longer for a given complete coupling length Lc. A folded DC is also presented based on calculations using Si waveguides. Here a meander-line with an array of segmented DCs and asymmetric 180°-curved waveguides was accommodated in a (100 μm)2 square area. Phases of propagating lights within two curved waveguides could be coincided. This cascade-connection of the segments of the DCs facilitated highly sensitive detection of biomolecules and a flexible sensor design. Signal dependences on device length and bulk RI change were evaluated by end-fire coupling measurements. The optical intensities agreed well with the corresponding fitting curve and the curve calculated based on the coupled mode theory.

  8. Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides.

    PubMed

    Choi, Ju Won; Chen, George F R; Ng, D K T; Ooi, Kelvin J A; Tan, Dawn T H

    2016-01-01

    CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra - silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W(-1)/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two - fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms. PMID:27272558

  9. Nano-mechanical measurements of protein-DNA interactions with a silicon nitride pulley

    PubMed Central

    Shon, Min Ju; Cohen, Adam E.

    2016-01-01

    Proteins adhere to DNA at locations and with strengths that depend on the protein conformation, the underlying DNA sequence and the ionic content of the solution. A facile technique to probe the positions and strengths of protein-DNA binding would aid in understanding these important interactions. Here, we describe a ‘DNA pulley’ for position-resolved nano-mechanical measurements of protein-DNA interactions. A molecule of λ DNA is tethered by one end to a glass surface, and by the other end to a magnetic bead. The DNA is stretched horizontally by a magnet, and a nanoscale knife made of silicon nitride is manipulated to contact, bend and scan along the DNA. The mechanical profile of the DNA at the contact with the knife is probed via nanometer-precision optical tracking of the magnetic bead. This system enables detection of protein bumps on the DNA and localization of their binding sites. We study theoretically the technical requirements to detect mechanical heterogeneities in the DNA itself. PMID:26338777

  10. Processing of Silicon Nitride Ceramics from Concentrated Aqueous Suspensions by Robocasting

    SciTech Connect

    HE,GUOPING; HIRSCHFELD,DEIDRE A.; CESARANO III,JOSEPH; STUECKER,JOHN N.

    2000-08-14

    The optimization of concentrated AlliedSignal GS-44 silicon nitride aqueous slurries for robocasting was investigated. The dispersion mechanisms of GS-44 Si{sub 3}N{sub 4} aqueous suspensions with and without polyacrylate were analyzed. The zero point of charge (ZPC) was at about pH 6. Well-dispersed GS-44 suspensions were obtained in the pH range from 7 to 11 by the addition of Darvan 821A. The influence of pH, amount of Darvan 821A and solids loading on the theological behavior of GS-44 aqueous suspensions was determined. A coagulant, aluminum nitrate, was used to control the yield stress and shear thinning behavior of highly loaded Si{sub 3}N{sub 4} slurries. Homogeneous and stable suspensions of 52 vol% GS-44 Si{sub 3}N{sub 4} were robocast successfully at pH 7.8 to pH 8.5. The sintering process, mechanical properties and microstructural characteristics of robocast GS-44 bars were determined.

  11. Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides

    PubMed Central

    Choi, Ju Won; Chen, George F. R.; Ng, D. K. T.; Ooi, Kelvin J. A.; Tan, Dawn T. H.

    2016-01-01

    CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra – silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W−1/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two – fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms. PMID:27272558

  12. Si-Si bond as a deep trap for electrons and holes in silicon nitride

    NASA Astrophysics Data System (ADS)

    Karpushin, A. A.; Sorokin, A. N.; Gritsenko, V. A.

    2016-02-01

    A two-stage model of the capture of electrons and holes in traps in amorphous silicon nitride Si3N4 has been proposed. The electronic structure of a "Si-Si bond" intrinsic defect in Si3N4 has been calculated in the tight-binding approximation without fitting parameters. The properties of the Si-Si bond such as a giant cross section for capture of electrons and holes and a giant lifetime of trapped carriers have been explained. It has been shown that the Si-Si bond in the neutral state gives shallow levels near the bottom of the conduction band and the top of the valence band, which have a large cross section for capture. The capture of an electron or a hole on this bond is accompanied by the shift of shallow levels by 1.4-1.5 eV to the band gap owing to the polaron effect and a change in the localization region of valence electrons of atoms of the Si-Si bond. The calculations have been proposed with a new method for parameterizing the matrix elements of the tightbinding Hamiltonian taking into account a change in the localization region of valence electrons of an isolated atom incorporated into a solid.

  13. Nano-mechanical measurements of protein-DNA interactions with a silicon nitride pulley.

    PubMed

    Shon, Min Ju; Cohen, Adam E

    2016-01-01

    Proteins adhere to DNA at locations and with strengths that depend on the protein conformation, the underlying DNA sequence and the ionic content of the solution. A facile technique to probe the positions and strengths of protein-DNA binding would aid in understanding these important interactions. Here, we describe a 'DNA pulley' for position-resolved nano-mechanical measurements of protein-DNA interactions. A molecule of λ DNA is tethered by one end to a glass surface, and by the other end to a magnetic bead. The DNA is stretched horizontally by a magnet, and a nanoscale knife made of silicon nitride is manipulated to contact, bend and scan along the DNA. The mechanical profile of the DNA at the contact with the knife is probed via nanometer-precision optical tracking of the magnetic bead. This system enables detection of protein bumps on the DNA and localization of their binding sites. We study theoretically the technical requirements to detect mechanical heterogeneities in the DNA itself. PMID:26338777

  14. ECR plasma synthesis of silicon nitride films on GaAs and InSb

    SciTech Connect

    Barbour, J.C.; Lovejoy, M.L.; Ashby, C.I.H.; Howard, A.J.; Custer, J.S.; Shul, R.J.

    1993-12-31

    Growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiN{sub x}) films were grown at temperatures from 30 to 250 C on GaAs substrates. Stress in films was measured as a function of bias applied during growth (varied from 0 to 200 V), and of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiN{sub x} growth without an applied bias (ion energy {congruent}30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of -200 V showed the largest reduction in film stress but also the smallest PL signal.

  15. Study of stress in tensile nitrogen-plasma-treated multilayer silicon nitride films

    SciTech Connect

    Morin, Pierre; Raymond, Gaetan; Benoit, Daniel; Guiheux, Denis; Pantel, Roland; Volpi, Fabien; Braccini, Muriel

    2011-07-15

    The authors conducted a physico-chemical analysis of tensile sequential-nitrogen-plasma-treated silicon nitride films, which function as stressor liners in complementary metal oxide semiconductor (CMOS) technologies. These films are made of stacked nanometer-thick, plasma-enhanced, chemical vapor-deposited layers which were individually treated with N{sub 2}-plasma, to increase stress. This study allowed us to monitor the evolution of the films' chemical composition and stress as a function of process parameters such as deposition and post-N{sub 2}-plasma duration. Consistent with secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) and other physico-chemical analysis results, it was shown that the elementary component of the films can be modeled with a bi-layer consisting of an untreated slice at the bottom that is covered by a more tensile post-treated film. In addition, we observed that longer plasma treatments increase residual stress, SiN bond concentration and layer density, while reducing hydrogen content. The stress increase induced by the plasma treatment was shown to correlate with the increase in SiN bonds following a percolation mechanism that is linked to hydrogen dissociation. Kinetics laws describing both SiN bond generation and stress increase are proposed and it is demonstrated that stress increase follows first-order kinetics.

  16. Gelcasting of sub-micron alumina, sialon, and silicon nitride powders

    SciTech Connect

    Omatete, O.O.; Strehlow, R.A.; Walls, C.A.

    1990-01-01

    Gelcasting is a near-net-shape forming technique that is applicable to various types of powders. It is accomplished by casting a concentrated suspension of a commercial ceramic powder in a solution of a polymerizable monomer and then polymerizing. A filled gel is formed, which is dried and processed further. Alumina, sialon, and silicon nitride parts of various geometries have been made and are described. Emphasis is placed on the unit-operations of the process. Because a requirement of the process is a castable suspension of more than 50 vol % solids loading, good dispersion is crucial. Drying, another key process, has been studied extensively. Shrinkage from the cast size occurs during drying and further shrinkage occurs during sintering. Data on the relationship of physical properties of products to some of the more significant processing variables is discussed. Emphasis is also placed on the machinability of the dried gelled body. Because the body at this stage is quite durable, green part machining is feasible. The monomer used in the process is acrylamide, which undergoes a vinyl polymerization. Environmental, safety and hygiene issues are summarized. 9 refs., 6 figs.

  17. Excellent wear life of silicon nitride/tetrahedral amorphous carbon bilayer overcoat on functional tape heads

    NASA Astrophysics Data System (ADS)

    Yeo, Reuben J.; Dwivedi, Neeraj; Tripathy, S.; Bhatia, C. S.

    2015-03-01

    Developing ultrathin and highly wear-resistant overcoats for magnetic tape heads is one of the current research areas of interest, because of its potential to delay pole tip recession and increase the operational lifetime of high areal density tape drives. Using optimized process conditions and an appropriate overcoat design, we report on the development of a ˜20 nm thick silicon nitride/tetrahedral amorphous carbon (Si/SiNx/ta-C) bilayer overcoat, where the ta-C film was deposited by a filtered cathodic vacuum arc process. The bilayer overcoat deposited on a functional tape head survived 40-50 × 106 m of testing with commercial tape media under standard industrial testing conditions. The excellent wear resistance of the overcoat was attributed to the generation of high (˜72%) sp3 carbon content and the formation of strong interfacial bonds, such as Si-C, C=N, nitrile, and (Al, Ti)N at the interfaces, as confirmed by various spectroscopic techniques. This study demonstrates the pivotal role of high sp3 carbon bonding combined with enhanced interfacial bonding in developing an ultrathin yet durable protective overcoat for magnetic tape heads.

  18. Evaluation of silicon nitride as a wear resistant and resorbable alternative for total hip joint replacement

    PubMed Central

    Olofsson, Johanna; Grehk, T. Mikael; Berlind, Torun; Persson, Cecilia; Jacobson, Staffan; Engqvist, Håkan

    2012-01-01

    Many of the failures of total joint replacements are related to tribology, i.e., wear of the cup, head and liner. Accumulation of wear particles at the implants can be linked to osteolysis which leads to bone loss and in the end aseptic implant loosening. Therefore it is highly desirable to reduce the generation of wear particles from the implant surfaces. Silicon nitride (Si3N4) has shown to be biocompatible and have a low wear rate when sliding against itself and is therefore a good candidate as a hip joint material. Furthermore, wear particles of Si3N4 are predicted to slowly dissolve in polar liquids and they therefore have the potential to be resorbed in vivo, potentially reducing the risk for aseptic loosening. In this study, it was shown that α-Si3N4-powder dissolves in PBS. Adsorption of blood plasma indicated a good acceptance of Si3N4 in the body with relatively low immune response. Si3N4 sliding against Si3N4 showed low wear rates both in bovine serum and PBS compared with the other tested wear couples. Tribofilms were built up on the Si3N4 surfaces both in PBS and in bovine serum, controlling the friction and wear characteristics. PMID:23507807

  19. Creep of a Silicon Nitride Under Various Specimen/Loading Configurations

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Powers, Lynn M.; Holland, Frederic A.; Gyekenyesi, John P.; Holland, F. A. (Technical Monitor)

    2000-01-01

    Extensive creep testing of a hot-pressed silicon nitride (NC132) was performed at 1300 C in air using five different specimen/loading configurations, including pure tension, pure compression, four-point uniaxial flexure, ball-on-ring biaxial flexure, and ring-on-ring biaxial flexure. Nominal creep strain and its rate for a given nominal applied stress were greatest in tension, least in compression, and intermediate in uniaxial and biaxial flexure. Except for the case of compressive loading, nominal creep strain generally decreased with time, resulting in less-defined steady-state condition. Of the four different creep formulations - power-law, hyperbolic sine, step, redistribution models - the conventional power-law model still provides the most convenient and reasonable means to estimate simple, quantitative creep parameters of the material. Predictions of creep deformation for the case of multiaxial stress state (biaxial flexure) were made based on pure tension and compression creep data by using the design code CARES/Creep.

  20. Joining and Integration of Silicon Nitride Ceramics for Aerospace and Energy Systems

    NASA Technical Reports Server (NTRS)

    Singh, M.; Asthana, R.

    2009-01-01

    Light-weight, creep-resistant silicon nitride ceramics possess excellent high-temperature strength and are projected to significantly raise engine efficiency and performance when used as turbine components in the next-generation turbo-shaft engines without the extensive cooling that is needed for metallic parts. One key aspect of Si3N4 utilization in such applications is its joining response to diverse materials. In an ongoing research program, the joining and integration of Si3N4 ceramics with metallic, ceramic, and composite materials using braze interlayers with the liquidus temperature in the range 750-1240C is being explored. In this paper, the self-joining behavior of Kyocera Si3N4 and St. Gobain Si3N4 using a ductile Cu-based active braze (Cu-ABA) containing Ti will be presented. Joint microstructure, composition, hardness, and strength as revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Knoop microhardness test, and offset compression shear test will be presented. Additionally, microstructure, composition, and joint strength of Si3N4/Inconel 625 joints made using Cu-ABA, will be presented. The results will be discussed with reference to the role of chemical reactions, wetting behavior, and residual stresses in joints.