Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Thick-film materials for silicon photovoltaic cell manufacture

NASA Technical Reports Server (NTRS)

Field, M. B.

1977-01-01

Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

Optical resonance analysis of reflected long period fiber gratings with metal film overlay

NASA Astrophysics Data System (ADS)

Zhang, Guiju; Cao, Bing; Wang, Chinua; Zhao, Minfu

2008-11-01

We present the experimental results of a novel single-ended reflecting surface plasma resonance (SPR) based long period fiber grating (LPFG) sensor. A long period fiber grating sensing device is properly designed and fabricated with a pulsed CO2 laser writing system. Different nm-thick thin metal films are deposited on the fiber cladding and the fiber end facet for the excitation of surface plasma waves (SPWs) and the reflection of the transmission spectrum of the LPFG with doubled interaction between metal-dielectric interfaces of the fiber to enhance the SPW of the all-fiber SPR-LPFG sensing system. Different thin metal films with different thicknesses are investigated. The effect of the excited SPW transmission along the fiber cladding-metal interface with silver and aluminum films is observed. It is found that different thicknesses of the metal overlay show different resonant behaviors in terms of resonance peak situation, bandwidth and energy loss. Within a certain range, thinner metal film shows narrower bandwidth and deeper peak loss.

Thin Semiconductor/Metal Films For Infrared Devices

NASA Technical Reports Server (NTRS)

Lamb, James L.; Nagendra, Channamallappa L.

1995-01-01

Spectral responses of absorbers and reflectors tailored. Thin cermet films composites of metals and semiconductors undergoing development for use as broadband infrared reflectors and absorbers. Development extends concepts of semiconductor and dielectric films used as interference filters for infrared light and visible light. Composite films offer advantages over semiconductor films. Addition of metal particles contributes additional thermal conductivity, reducing thermal gradients and associated thermal stresses, with resultant enhancements of thermal stability. Because values of n in composite films made large, same optical effects achieved with lesser thicknesses. By decreasing thicknesses of films, one not only decreases weights but also contributes further to reductions of thermal stresses.

Single domain YBa2Cu3Oy thick films on metallic substrates

NASA Astrophysics Data System (ADS)

Reddy, E. S.; Noudem, J. G.; Goodilin, E. A.; Tarka, M.; Schmitz, G. J.

2003-03-01

The fabrication of single domain YBa2Cu3Oy (123) thick films (10-100 mum) on metallic substrates is reported. The process involves the formation of the 123 phase by a peritectic reaction between an air-brushed dense Y2BaCuO5 (211) layer on a Ag12Pd substrate and infiltrated liquid phases containing barium cuprates and copper oxides. Single domain growth is achieved by seeding the green films with a c-axis oriented NdBa2Cu3Oy crystal prior to processing. The maximum processing temperatures are lowered to 970 °C by modifying the characteristics of the liquid phases meant for infiltration by addition of Ag powder. The fabrication technique, processing conditions for single domain growth and the resulting microstructures are discussed.

Development of an all-metal thick film cost effective metallization system for solar cells

NASA Technical Reports Server (NTRS)

Ross, B.

1981-01-01

The objectives of the investigation were to provide all-metal screenable pastes using economical base metals, suitable for application to low-to-high conductivity silicon of either conductivity type and possibly to aluminum surfaces. Experiments were conducted with variations in paste parameters, firing conditions, including gas ambients, furnace furniture, silicon surface and others. A liquid medium, intended to provide transport during the carbon fluoride decomposition was incorporated in the paste with promising results.

Discrete component bonding and thick film materials study

NASA Technical Reports Server (NTRS)

Kinser, D. L.

1975-01-01

The results are summarized of an investigation of discrete component bonding reliability and a fundamental study of new thick film resistor materials. The component bonding study examined several types of solder bonded components with some processing variable studies to determine their influence upon bonding reliability. The bonding reliability was assessed using the thermal cycle: 15 minutes at room temperature, 15 minutes at +125 C 15 minutes at room temperature, and 15 minutes at -55 C. The thick film resistor materials examined were of the transition metal oxide-phosphate glass family with several elemental metal additions of the same transition metal. These studies were conducted by preparing a paste of the subject composition, printing, drying, and firing using both air and reducing atmospheres. The resulting resistors were examined for adherence, resistance, thermal coefficient of resistance, and voltage coefficient of resistance.

Tunneling interferometry and measurement of the thickness of ultrathin metallic Pb(111) films

NASA Astrophysics Data System (ADS)

Ustavshchikov, S. S.; Putilov, A. V.; Aladyshkin, A. Yu.

2017-10-01

Spectra of the differential tunneling conductivity for ultrathin lead films grown on Si(111) 7 × 7 single crystals with a thickness of 9 to 50 ML have been studied by low-temperature scanning tunneling microscopy and spectroscopy. The presence of local maxima of the tunneling conductivity is characteristic of such systems. The energies of maxima of the differential conductivity are determined by the spectrum of quantum-confined states of electrons in a metallic layer and, consequently, the local thickness of the layer. It has been shown that features of the microstructure of substrates, such as steps of monatomic height, structural defects, and inclusions of other materials covered with a lead layer, can be visualized by bias-modulation scanning tunneling spectroscopy.

Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

NASA Astrophysics Data System (ADS)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

Thickness and microstructure effects in the optical and electrical properties of silver thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel

The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅more » fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.« less

Evaluating nanoscale ultra-thin metal films by means of lateral photovoltaic effect in metal-semiconductor structure.

PubMed

Zheng, Diyuan; Yu, Chongqi; Zhang, Qian; Wang, Hui

2017-12-15

Nanoscale metal-semiconductor (MS) structure materials occupy an important position in semiconductor and microelectronic field due to their abundant physical phenomena and effects. The thickness of metal films is a critical factor in determining characteristics of MS devices. How to detect or evaluate the metal thickness is always a key issue for realizing high performance MS devices. In this work, we propose a direct surface detection by use of the lateral photovoltaic effect (LPE) in MS structure, which can not only measure nanoscale thickness, but also detect the fluctuation of metal films. This method is based on the fact that the output of lateral photovoltaic voltage (LPV) is closely linked with the metal thickness at the laser spot. We believe this laser-based contact-free detection is a useful supplement to the traditional methods, such as AFM, SEM, TEM or step profiler. This is because these traditional methods are always incapable of directly detecting ultra-thin metal films in MS structure materials.

Evaluating nanoscale ultra-thin metal films by means of lateral photovoltaic effect in metal-semiconductor structure

NASA Astrophysics Data System (ADS)

Zheng, Diyuan; Yu, Chongqi; Zhang, Qian; Wang, Hui

2017-12-01

Nanoscale metal-semiconductor (MS) structure materials occupy an important position in semiconductor and microelectronic field due to their abundant physical phenomena and effects. The thickness of metal films is a critical factor in determining characteristics of MS devices. How to detect or evaluate the metal thickness is always a key issue for realizing high performance MS devices. In this work, we propose a direct surface detection by use of the lateral photovoltaic effect (LPE) in MS structure, which can not only measure nanoscale thickness, but also detect the fluctuation of metal films. This method is based on the fact that the output of lateral photovoltaic voltage (LPV) is closely linked with the metal thickness at the laser spot. We believe this laser-based contact-free detection is a useful supplement to the traditional methods, such as AFM, SEM, TEM or step profiler. This is because these traditional methods are always incapable of directly detecting ultra-thin metal films in MS structure materials.

Influence of cement film thickness on the retention of implant-retained crowns.

PubMed

Mehl, Christian; Harder, Sönke; Steiner, Martin; Vollrath, Oliver; Kern, Matthias

2013-12-01

The main goal of this study was to establish a new, high precision procedure to evaluate the influence of cement film thickness on the retention of cemented implant-retained crowns. Ninety-six tapered titanium abutments (6° taper, 4.3 mm diameter, Camlog) were shortened to 4 mm. Computer-aided design was used to design the crowns, and selective laser sintering, using a cobalt-chromium alloy, was used to produce the crowns. This method used a focused high-energy laser beam to fuse a localized region of metal powder to build up the crowns gradually. Before cementing, preset cement film thicknesses of 15, 50, 80, or 110 μm were established. Glass ionomer, polycarboxylate, or resin cements were used for cementation. After 3 days storage in demineralized water, the retention of the crowns was measured in tension using a universal testing machine. The cement film thicknesses could be achieved with a high level of precision. Interactions between the factors cement and cement film thickness could be found (p ≤ 0.001). For all cements, crown retention decreased significantly between a cement film thickness of 15 and 50 μm (p ≤ 0.001). At 15 μm cement film thickness, the resin cement was the most retentive cement, followed by the polycarboxylate and then the glass ionomer cement (p ≤ 0.05). The results suggest that cement film thickness has an influence on the retentive strength of cemented implant-retained crowns. © 2013 by the American College of Prosthodontists.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

NASA Astrophysics Data System (ADS)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence

PubMed Central

Aslan, Kadir; Malyn, Stuart N.; Zhang, Yongxia; Geddes, Chris D.

2008-01-01

We report the effects of thermally annealing, non-, just-, and thick continuous silver films for their potential applications in metal-enhanced fluorescence, a near-field concept which can alter the free-space absorption and emissive properties of close-proximity fluorophores (excited states). We have chosen to anneal a noncontinuous particulate film 5 nm thick and two thicker continuous films, 15 and 25 nm thick, respectively. Our results show that the annealing of the 25 nm film has little effect on close-proximity fluorescence when coated with a monolayer of fluorophore-labeled protein. However, the 15 nm continuous film cracks upon annealing, producing large nanoparticles which are ideal for enhancing the fluorescence of close-proximity fluorophores that are indeed difficult to prepare by other wet-chemical deposition processes. The annealing of 5 nm noncontinuous particulate films (a control sample) has little influence on metal-enhanced fluorescence, as expected. PMID:19479004

Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence.

PubMed

Aslan, Kadir; Malyn, Stuart N; Zhang, Yongxia; Geddes, Chris D

2008-04-15

We report the effects of thermally annealing, non-, just-, and thick continuous silver films for their potential applications in metal-enhanced fluorescence, a near-field concept which can alter the free-space absorption and emissive properties of close-proximity fluorophores (excited states). We have chosen to anneal a noncontinuous particulate film 5 nm thick and two thicker continuous films, 15 and 25 nm thick, respectively. Our results show that the annealing of the 25 nm film has little effect on close-proximity fluorescence when coated with a monolayer of fluorophore-labeled protein. However, the 15 nm continuous film cracks upon annealing, producing large nanoparticles which are ideal for enhancing the fluorescence of close-proximity fluorophores that are indeed difficult to prepare by other wet-chemical deposition processes. The annealing of 5 nm noncontinuous particulate films (a control sample) has little influence on metal-enhanced fluorescence, as expected.

Effects of the PPy layer thickness on Co-PPy composite films

NASA Astrophysics Data System (ADS)

Haciismailoglu, Murside

2015-11-01

Co-PPy composite films were electrodeposited on ITO substrate from two different solutions potentiostatically. Firstly, the PPy layers with the thicknesses changing from 20 to 5000 nm were produced on ITO. Then Co was electrodeposited on these PPy/ITO substrates with a charge density of 1000 mC cm-2. The electrochemical properties were investigated by the current density-time transients and the variation of the elapsed time for the Co deposition depending on the PPy layer thickness. X-ray photoelectron (XPS) spectra indicated the presence of both Co metal and its oxides on the surface. The weak reflections of the Co3O4, CoO and hcp Co were detected by the X-ray diffraction (XRD) technique. According to scanning electron microscopy (SEM) images, the thickness of the PPy layer strongly affects the Co nucleation. The composite films with the PPy layer thinner than 200 nm and thicker than 2000 nm have an isotropic magnetic behavior due to the symmetrical crystal field. The composite films with the PPy layer thicknesses between 200 and 2000 nm have an anisotropic magnetic behavior attributable to the deterioration of this symmetrical crystal field by the PPy bubbles on the surface. All films are hard magnetic material, since the coercivities are larger than 125 Oe.

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

PubMed

Li, Xin; Jordan, Matthew B; Ayari, Taha; Sundaram, Suresh; El Gmili, Youssef; Alam, Saiful; Alam, Muhbub; Patriarche, Gilles; Voss, Paul L; Paul Salvestrini, Jean; Ougazzaden, Abdallah

2017-04-11

Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 ± 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.

Spin-coated epoxy resin embedding technique enables facile SEM/FIB thickness determination of porous metal oxide ultra-thin films.

PubMed

Peña, B; Owen, G Rh; Dettelbach, K E; Berlinguette, C P

2018-01-25

A facile nonsubjective method was designed to measure porous nonconductive iron oxide film thickness using a combination of a focused ion beam (FIB) and scanning electron microscopy. Iron oxide films are inherently nonconductive and porous, therefore the objective of this investigation was to optimize a methodology that would increase the conductivity of the film to facilitate high resolution imaging with a scanning electron microscopy and to preserve the porous nature of the film that could potentially be damaged by the energy of the FIB. Sputter coating the sample with a thin layer of iridium before creating the cross section with the FIB decreased sample charging and drifting, but differentiating the iron layer from the iridium coating with backscattered electron imaging was not definitive, making accurate assumptions of the delineation between the two metals difficult. Moreover, the porous nature of the film was lost due to beam damage following the FIB process. A thin layer plastication technique was therefore used to embed the porous film in epoxy resin that would provide support for the film during the FIB process. However, the thickness of the resin created using conventional thin layer plastication processing varied across the sample, making the measuring process only possible in areas where the resin layer was at its thinnest. Such variation required navigating the area for ideal milling areas, which increased the subjectivity of the process. We present a method to create uniform thin resin layers, of controlled thickness, that are ideal for quantifying the thickness of porous nonconductive films with FIB/scanning electron microscopy. © 2018 The Authors Journal of Microscopy © 2018 Royal Microscopical Society.

Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films

NASA Astrophysics Data System (ADS)

Kalkan, N.

2016-10-01

Current-voltage characteristics of indium-embedded indium oxide thin films (600-850 Å), with Ag electrodes approximately 1000 Å thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125°C. The optical properties of these films have also been investigated as a function of metallic indium concentration and substrate temperature. I-V characteristics of all the samples are non-ohmic, independent of metallic indium concentration. The conductivity of the films increases but the optical transmission decreases with increasing metallic indium concentration. Metallic indium concentration was found to be an important parameter affecting the film properties. Furthermore, two possible conduction mechanisms are proposed.

Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films.

PubMed

Duangdee, Chatnapa; Tangpukdee, Noppadon; Krudsood, Srivicha; Wilairatana, Polrat

2012-04-01

To determine the frequency of malaria parasite detection from the buffy coat blood films by using capillary tube in falciparum malaria patients with negative conventional thick films. Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification. Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

Low Temperature, Selective Atomic Layer Deposition of Nickel Metal Thin Films.

PubMed

Kerrigan, Marissa M; Klesko, Joseph P; Blakeney, Kyle J; Winter, Charles H

2018-04-25

We report the growth of nickel metal films by atomic layer deposition (ALD) employing bis(1,4-di- tert-butyl-1,3-diazadienyl)nickel and tert-butylamine as the precursors. A range of metal and insulating substrates were explored. An initial deposition study was carried out on platinum substrates. Deposition temperatures ranged from 160 to 220 °C. Saturation plots demonstrated self-limited growth for both precursors, with a growth rate of 0.60 Å/cycle. A plot of growth rate versus substrate temperature showed an ALD window from 180 to 195 °C. Crystalline nickel metal was observed by X-ray diffraction for a 60 nm thick film deposited at 180 °C. Films with thicknesses of 18 and 60 nm grown at 180 °C showed low root mean square roughnesses (<2.5% of thicknesses) by atomic force microscopy. X-ray photoelectron spectroscopies of 18 and 60 nm thick films deposited on platinum at 180 °C revealed ionizations consistent with nickel metal after sputtering with argon ions. The nickel content in the films was >97%, with low levels of carbon, nitrogen, and oxygen. Films deposited on ruthenium substrates displayed lower growth rates than those observed on platinum substrates. On copper substrates, discontinuous island growth was observed at ≤1000 cycles. Film growth was not observed on insulating substrates under any conditions. The new nickel metal ALD procedure gives inherently selective deposition on ruthenium and platinum from 160 to 220 °C.

System for measuring film thickness

DOEpatents

Batishko, Charles R.; Kirihara, Leslie J.; Peters, Timothy J.; Rasmussen, Donald E.

1990-01-01

A system for determining the thicknesses of thin films of materials exhibiting fluorescence in response to exposure to excitation energy from a suitable source of such energy. A section of film is illuminated with a fixed level of excitation energy from a source such as an argon ion laser emitting blue-green light. The amount of fluorescent light produced by the film over a limited area within the section so illuminated is then measured using a detector such as a photomultiplier tube. Since the amount of fluorescent light produced is a function of the thicknesses of thin films, the thickness of a specific film can be determined by comparing the intensity of fluorescent light produced by this film with the intensity of light produced by similar films of known thicknesses in response to the same amount of excitation energy. The preferred embodiment of the invention uses fiber optic probes in measuring the thicknesses of oil films on the operational components of machinery which are ordinarily obscured from view.

Ellipsometric study of oxide films formed on LDEF metal samples

NASA Technical Reports Server (NTRS)

Franzen, W.; Brodkin, J. S.; Sengupta, L. C.; Sagalyn, P. L.

1992-01-01

The optical constants of samples of six different metals (Al, Cu, Ni, Ta, W, and Zr) exposed to space on the Long Duration Exposure Facility (LDEF) were studied by variable angle spectroscopic ellipsometry. Measurements were also carried out on portions of each sample which were shielded from direct exposure by a metal bar. A least-squares fit of the data using an effective medium approximation was then carried out, with thickness and composition of surface films formed on the metal substrates as variable parameters. The analysis revealed that exposed portions of the Cu, Ni, Ta, and Zr samples are covered with porous oxide films ranging in thickness from 500 to 1000 A. The 410 A thick film of Al2O3 on the exposed Al sample is practically free of voids. Except for Cu, the shielded portions of these metals are covered by thin non-porous oxide films characteristic of exposure to air. The shielded part of the Cu sample has a much thicker porous coating of Cu2O. The tungsten data could not be analyzed.

Thick Film Interference.

ERIC Educational Resources Information Center

Trefil, James

1983-01-01

Discusses why interference effects cannot be seen with a thick film, starting with a review of the origin of interference patterns in thin films. Considers properties of materials in films, properties of the light source, and the nature of light. (JN)

Three Dimensional Microfabrication On Thick Film Photoresist Mandrels

NASA Astrophysics Data System (ADS)

Salmre, William

1984-05-01

Small, three-dimensional structures are fabricated by the use of thick film photoresist mandrels as substrates for electoforming or other deposition techniques. Novel methods have been developed for the sculpting of the resist to desired shapes. These techniques rely heavily on the use of glass or other substrates coated with layers of metal. The metal serves both as a photomask and as a conductor of electricity. Commercially available chrome-on-glass photomasks are convenient for this purpose although other substrates have also been used. By controlling the thickness and light transmission of the metal layer, the amount of exposure of the resist can also be controlled to produce the desired shapes in the resist. For even more complex mandrels the resist can be exposed from both sides using self-aligned photomasks.

Engineering Electronic Properties of Strongly Correlated Metal Thin Films

NASA Astrophysics Data System (ADS)

Eaton, Craig

This dissertation reports on advances in synthesis and characterization of high quality perovskite metals with strong electron correlation. These materials have attracted considerable attention for their potential application as an active electronic material in logic applications utilizing the Mott type metal-to-insulator transition. CaVO3 and SrVO3 correlated metal oxide films have been grown by hybrid-molecular beam epitaxy (MBE), where alkaline earth cations are supplied using a conventional effusion cell and the transition metal vanadium is supplied using the metal-organic precursor vanadium (V) oxytriisopropoxide. Oxygen is available in both molecular and remote plasma activated forms. Titanate-based band insulators, namely SrTiO3 and CaTiO3, have also been grown using titanium tetra-isopropoxide as metal-organic precursor. The grown films have been characterized using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM), transition electron microscopy (TEM), and electrical properties have been determined using temperature dependent resistivity and Hall measurements. Optimized films exhibit high quality Kiessig fringes, with substrate limited rocking curve widths of 8 arc seconds in the case of CaVO3 and 17 arc seconds in the case of SrVO3. Both vanadate films grew in a step-flow mode with atomic steps visible after growth by AFM. In SrVO3, the perovskite phase remained present with a gradual lattice expansion away from the optimal cation flux ratio. For CaVO3, the films remained phase pure and with little change in lattice parameter throughout a growth window that spanned a 30% range in cation flux ratios. While an abrupt increase of lattice parameter was found for CaVO3 films grown under Carich conditions, films grown under V-rich conditions revealed a gradual reduction in lattice parameter, in contrast to SrVO3 where all defects have been shown to increase unit cell volume. Low resistivity and high

Method for preparing a thick film conductor

DOEpatents

Nagesh, Voddarahalli K.; Fulrath, deceased, Richard M.

1978-01-01

A method for preparing a thick film conductor which comprises providing surface active glass particles, mixing the surface active glass particles with a thermally decomposable organometallic compound, for example, a silver resinate, and then decomposing the organometallic compound by heating, thereby chemically depositing metal on the glass particles. The glass particle mixture is applied to a suitable substrate either before or after the organometallic compound is thermally decomposed. The resulting system is then fired in an oxidizing atmosphere, providing a microstructure of glass particles substantially uniformly coated with metal.

Thickness Measurement, Rate Control And Automation In Thin Film Coating Technology

NASA Astrophysics Data System (ADS)

Pulker, H. K.

1983-11-01

There are many processes known for fabricating thin films/1, 2.Among them the group of physical vapor deposition processes comprising evaporation, sputtering and ion plating has received special attention.Especially evaporation but also the other PVD techniques are widely used to deposit various single and multilayer coatings for optical and electrical thin film applications/3,4/.A large number of parameters is important in obtaining the required film properties in a reproducible manner when depositing thin films by such processes.Amongst the many are the film thickness, the condensation rate,the substrate temperature,as well as the qualitative and the quantitative composition of the residual gas of primary importance.First of all the film thickness is a dimension which enters in practically all equations used to characterize a thin film. However,when discussing film thickness,definitions are required since there one has to distinguish between various types of thicknesses e.g.geometrical thickness,mass thickness and optical thickness.The geometrical thickness,often also called physical thickness,is defined as the step height between the substrate surface and the film surface.This step height multiplied by the refractive index of the film is termed the optical thickness and is expressed generally in integer multiples of fractional parts of a desired wavelength.The mass thickness finally is defined as the film mass per unit area obtained by weighing.Knowing the density and the optical data of a thin film its mass thickness can be converted into the corresponding geometrical as well as optical thickness.However,with ultrathin films ranging between a few and several atomic or molecular "layers"the concept of a film thickness may become senseless since often no closed film exists of such minor deposits.Although film thickness is a length,the measurement of it can,obviously,not be accomplished with conventional methods for length determinations but requires special

Development of a thick GdBCO and ZrO 2-doped GdBCO film with a high critical current on a PLD-CeO 2/IBAD-GZO metal substrate

NASA Astrophysics Data System (ADS)

Kinoshita, A.; Takahashi, K.; Kobayashi, H.; Yamada, Y.; Ibi, A.; Fukushima, H.; Konishi, M.; Miyata, S.; Shiohara, Y.; Kato, T.; Hirayama, T.

2007-10-01

In order to obtain a high critical current, Ic, we have fabricated a thick GdBa2Cu3O7-x (GdBCO) film by the pulsed laser deposition (PLD) method on a PLD-CeO2/ion-beam assisted deposition (IBAD)-Gd2Zr2O7 (GZO)/hastelloy metal substrate. The film of a 3.6 μm thickness exhibited the highest critical current of 522 A/cm at self-field and at 77 K. It was found that a low volume fraction of a-axis oriented grains was obtained in the thick GdBCO films, compared to YBa2Cu3O7-x (YBCO) films. The GdBCO films showed a higher critical current density (Jc), than YBCO films in all thicknesses from 0.2 to 3.6 μm. Furthermore, we have improved Ic in a magnetic field by the introduction of artificial pinning centers using a 5 mol% ZrO2-doped GdBCO target. In the measurement of angular dependence of Ic, which was much improved at 0°, the magnetic field was parallel to the c-axis. The Ic value at 3 T was 59.5 A/cm at 0° and showed a minimum of 42.3 A/cm at 82° for the film of a 2.3 μm thickness. The minimum value at 3 T in angular dependence of Ic was about five times higher than that of the YBCO film and two times higher than that of pure the GdBCO film.

Novel mechanisms for self-assembled pattern formation in nanoscopic metal films

NASA Astrophysics Data System (ADS)

Kalyanaraman, R.; Trice, J.; Favazza, C.; Thomas, D.; Sureshkumar, R.

2007-03-01

Classical hydrodynamic theory of dewetting of spinodally unstable thin films (Vrij, Disc. farad. Soc. 1966) predicts a monotonic increase in patterning length scales with increasing film thickness. We verified this effect for nanoscopic Co metal films following melting by ns laser pulses for thickness regime h<=hc˜8,m (Favazza et al. Nanotechnology, 2006). However, a dramatic change is observed beyond this thickness hc, with length scales decreasing with increasing h. This novel behavior arises from strong thickness dependence of heating by ultrafast laser light resulting in thermocapillary effects, whose magnitude and sign are thickness dependent. We modified the classical theory, according to which the instability occurs when the stabilizing capillary force is overcome by destabilizing attractive long-range interactions, to include thermocapillary effects. The modified theory accurately predicts the experimentally observed trend. This result suggests that a variety of new length scales can be accessed by robust self-assembly via dewetting of metal films under ultrafast light.

Interplay between quantum confinement and surface effects in thickness selective stability of thin Ag and Eu films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xiaojie; Wang, Cai -Zhuang

Using first-principles calculations, we show that both face-centered cubic (fcc) Ag (1 1 0) ultrathin films and body-centered cubic (bcc) Eu(1 1 0) ultrathin films exhibit thickness selective stability. Furthermore, the origin of such thickness selection is different. While the thickness selective stability in fcc Ag(1 1 0) films is mainly due to the well-known quantum well states ascribed to the quantum confinement effects in free-electron-like metal films, the thickness selection in bcc Eu(1 1 0) films is more complex and also strongly correlated with the occupation of the surface and surface resonance states.

Interplay between quantum confinement and surface effects in thickness selective stability of thin Ag and Eu films

DOE PAGES

Liu, Xiaojie; Wang, Cai -Zhuang

2017-04-03

Using first-principles calculations, we show that both face-centered cubic (fcc) Ag (1 1 0) ultrathin films and body-centered cubic (bcc) Eu(1 1 0) ultrathin films exhibit thickness selective stability. Furthermore, the origin of such thickness selection is different. While the thickness selective stability in fcc Ag(1 1 0) films is mainly due to the well-known quantum well states ascribed to the quantum confinement effects in free-electron-like metal films, the thickness selection in bcc Eu(1 1 0) films is more complex and also strongly correlated with the occupation of the surface and surface resonance states.

Changes in chemical and optical properties of thin film metal mirrors on LDEF

NASA Technical Reports Server (NTRS)

Peters, Palmer N.; Zwiener, James M.; Gregory, John C.; Raikar, Ganesh N.; Christl, Ligia C.; Wilkes, Donald R.

1995-01-01

Thin films of the metals Cu, Ni, Pt, Au, Sn, Mo, and W deposited on fused silica flats were exposed at ambient temperature on the leading and trailing faces of the LDEF. Reflectances of these films were measured from 250 to 2500 nm and compared with controls. The exposed films were subjected to the LDEF external environment including atomic oxygen, molecular contamination, and solar ultraviolet. Major changes in optical and infrared reflectance were seen for Cu, Mo, Ni, and W films on the leading face of LDEF and are attributed to partial conversion of metal to metal oxide. Smaller changes in optical properties are seen on all films and are probably caused by thin contaminant films deposited on top of the metal. The optical measurements are correlated with film thickness measurements, x-ray photoelectron spectroscopy, optical calculations, and, in the case of Cu, with x-ray diffraction measurements. In a few cases, comparisons with results from a similar UAH experiment on STS-8 have been drawn.

Surface Plasmon Waves on Thin Metal Films.

NASA Astrophysics Data System (ADS)

Craig, Alan Ellsworth

Surface-plasmon polaritons propagating on thin metal films bounded by dielectrics of nearly equal refractive indexes comprise two bound modes. Calculations indicate that, while the modes are degenerate on thick films, both the real and the imaginary components of the propagation constants for the modes split into two branches on successively thinner films. Considering these non-degenerate modes, the mode exhibiting a symmetric (antisymmetric) transverse profile of the longitudinally polarized electric field component, has propagation constant components both of which increase (decrease) with decreasing film thickness. Theoretical propagation constant eigenvalue (PCE) curves have been plotted which delineate this dependence of both propagation constant components on film thickness. By means of a retroreflecting, hemispherical glass coupler in an attenuated total reflection (ATR) configuration, light of wavelength 632.8 nm coupled to the modes of thin silver films deposited on polished glass substrates. Lorentzian lineshape dips in the plots of reflectance vs. angle of incidence indicate the presence of the plasmon modes. The real and imaginary components of the propagation constraints (i.e., the propagation constant and loss coefficient) were calculated from the angular positions and widths of the ATR resonances recorded. Films of several thicknesses were probed. Results which support the theoretically predicted curves were reported.

Ellipsometric measurement of liquid film thickness

NASA Technical Reports Server (NTRS)

Chang, Ki Joon; Frazier, D. O.

1989-01-01

The immediate objective of this research is to measure liquid film thickness from the two equilibrium phases of a monotectic system in order to estimate the film pressure of each phase. Thus liquid film thicknesses on the inside walls of the prism cell above the liquid level have been measured elliposmetrically for the monotectic system of succinonitrile and water. The thickness varies with temperature and composition of each plane. The preliminary results from both layers at 60 deg angle of incidence show nearly uniform thickness from about 21 to 23 C. The thickness increases with temperature but near 30 C the film appears foggy and scatters the laser beam. As the temperature of the cell is raised beyond room temperature it becomes increasingly difficult to equalize the temperature inside and outside the cell. The fogging may also be an indication that solution, not pure water, is adsorbed onto the substrate. Nevertheless, preliminary results suggest that ellipsometric measurement is feasible and necessary to measure more accurately and rapidly the film thickness and to improve thermal control of the prism walls.

Structurally colored biopolymer thin films for detection of dissolved metal ions in aqueous solution

NASA Astrophysics Data System (ADS)

Cathell, Matthew David

Natural polymers, such as the polysaccharides alginate and chitosan, are noted sorbents of heavy metals. Their polymer backbone structures are rich in ligands that can interact with metal ions through chelation, electrostatics, ion exchange and nonspecific mechanisms. These water-soluble biopolymer materials can be processed into hydrogel thin films, creating high surface area interfaces ideal for binding and sequestering metal ions from solution. By virtue of their uniform nanoscale dimensions (with thicknesses smaller than wavelengths of visible light) polymer thin films exhibit structure-based coloration. This phenomenon, frequently observed in nature, causes the transparent and essentially colorless films to reflect light in a wide array of colors. The lamellar film structures act as one-dimensional photonic crystals, allowing selective reflection of certain wavelengths of light while minimizing other wavelengths by out-of-phase interference. The combination of metal-binding and reflective properties make alginate and chitosan thin films attractive candidates for analyte sensing. Interactions with metal ions can induce changes in film thicknesses and refractive indices, thus altering the path of light reflected through the film. Small changes in dimensional or optical properties can lead to shifts in film color that are perceivable by the unaided eye. These thin films offer the potential for optical sensing of toxic dissolved materials without the need for instrumentation, external power or scientific expertise. With the use of a spectroscopic ellipsometer and a fiber optic reflectance spectrometer, the physical and optical characteristics of biopolymer thin films have been characterized in response to 50 ppm metal ion solutions. It has been determined that metal interactions can lead to measurable changes in both film thicknesses and effective refractive indices. The intrinsic response behaviors of alginate and chitosan, as well as the responses of modified

Reflection Properties of Metallic Gratings on ZnO Films over GaAs Substrates

NASA Technical Reports Server (NTRS)

Hickernell, Fred S.; Kim, Yoonkee; Hunt, William D.

1994-01-01

A potential application for piezoelectric film deposited on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Metallic gratings are basic elements required for the construction of such devices, and analyzing the reflectivity and the velocity change due to metallic gratings is often a critical design parameter. In this article, Datta and Hunsinger technique is extended to the case of a multilayered structure, and the developed technique is applied to analyze shorted and open gratings on ZnO films sputtered over (001)-cut (110)-propagating GaAs substrates. The analysis shows that zero reflectivity of shorted gratings can be obtained by a combination of the ZnO film and the metal thickness and the metalization ratio of the grating. Experiments are performed on shorted and an open gratings (with the center frequency of about 180 MHz) for three different metal thicknesses over ZnO films which are 0.8 and 2.6 micrometers thick. From the experiments, zero reflectivity at the resonant frequency of the grating is observed for a reasonable thickness (h/Alpha = 0.5%) of aluminum metalization. The velocity shift between the shorted and the open grating is also measured to be 0.18 MHz and 0.25 MHz for 0.8 and 1.6 micrometers respectively. The measured data show relatively good agreement with theoretical predictions.

Strain relaxation in nm-thick Cu and Cu-alloy films bonded to a rigid substrate

NASA Astrophysics Data System (ADS)

Herrmann, Ashley Ann Elizabeth

In the wide scope of modern technology, nm-thick metallic films are increasingly used as lubrication layers, optical coatings, plating seeds, diffusion barriers, adhesion layers, metal contacts, reaction catalyzers, etc. A prominent example is the use of nm-thick Cu films as electroplating seed layers in the manufacturing of integrated circuits (ICs). These high density circuits are linked by on-chip copper interconnects, which are manufactured by filling Cu into narrow trenches by electroplating. The Cu fill by electroplating requires a thin Cu seed deposited onto high-aspect-ratio trenches. In modern ICs, these trenches are approaching 10 nm or less in width, and the seed layers less than 1 nm in thickness. Since nm-thick Cu seed layers are prone to agglomeration or delamination, achieving uniform, stable and highly-conductive ultra-thin seeds has become a major manufacturing challenge. A fundamental understanding of the strain behavior and thermal stability of nm-thick metal films adhered to a rigid substrate is thus critically needed. In this study, we focus on understanding the deformation modes of nm-thick Cu and Cu-alloy films bonded to a rigid Si substrate and under compressive stress. The strengthening of Cu films through alloying is also studied. In-situ transport measurements are used to monitor the deformation of such films as they are heated from room temperature to 400 °C. Ex-situ AFM is then used to help characterize the mode of strain relaxation. The relaxation modes are known to be sensitive to the wetting and adhesive properties of the film-substrate interface. We use four different liners (Ta, Ru, Mo and Co), interposed between the film and substrate to provide a wide range of interfacial properties to study their effect on the film's thermal stability. Our measurements indicate that when the film/liner interfacial energy is low, grain growth is the dominant relaxation mechanism. As the interface energy increases, grain growth is suppressed, and

Thickness dependent properties of CMR Manganite thin films on lattice mismatched substrates: Distinguishing Strain and Interface Effects

NASA Astrophysics Data System (ADS)

Davidson, Anthony, III; Kolagani, Rajeswari; Bacharova, Ellisaveta; Yong, Grace; Smolyaninova, Vera; Schaefer, David; Mundle, Rajeh

2007-03-01

Epitaxial thin films of CMR manganite materials have been known to show thickness dependent electrical and magnetic properties on lattice mismatched substrates. Below a critical thickness, insulator-metal transition is suppressed. These effects have been largely attributed to the role of bi-axial lattice mismatch strain. Our recent results of epitaxial thin films of La0.67Ca0.33MnO3 (LCMO) on two substrates with varying degrees of compressive lattice mismatch indicate that, in addition to the effect of lattice mismatch strain, the thickness dependence of the properties are influenced by other factors possibly related to the nature of the film substrate interface and defects such as twin boundaries. We have compared the properties of LCMO films on (100) oriented LaAlO3 and (001) oriented NdCaAlO4 both of which induce compressive bi-axial strain. Interestingly, the suppression of the insulator-metal transition is less in films on NCAO which has a larger lattice mismatch. We will present results correlating the electrical and magneto transport properties with the structure and morphology of the films.

Metal/dielectric/metal sandwich film for broadband reflection reduction

PubMed Central

Jen, Yi-Jun; Lakhtakia, Akhlesh; Lin, Meng-Jie; Wang, Wei-Hao; Wu, Huang-Ming; Liao, Hung-Sheng

2013-01-01

A film comprising randomly distributed metal/dielectric/metal sandwich nanopillars with a distribution of cross-sectional diameters, displayed extremely low reflectance over the blue-to-red regime, when coated on glass and illuminated normally. When it is illuminated by normally incident light, this sandwich film (SWF) has a low extinction coefficient, its phase thickness is close to a negative wavelength in the blue-to-red spectral regime, and it provides weakly dispersive forward and backward impedances, so that reflected waves from the two faces of the SWF interfere destructively. Broadband reflection-reduction, over a wide range of incidence angles and regardless of the polarization state of the incident light, was observed when the SWF was deposited on polished silicon. PMID:23591704

Development of Thick-Film Thermoelectric Microcoolers Using Electrochemical Deposition

NASA Technical Reports Server (NTRS)

Fleurial, J.-P.; Borshchevsky, A.; Ryan, M. A.; Phillips, W. M.; Snyder, J. G.; Caillat, T.; Kolawa, E. A.; Herman, J. A.; Mueller, P.; Nicolet, M.

2000-01-01

Advanced thermoelectric microdevices integrated into thermal management packages and low power, electrical source systems are of interest for a variety of space and terrestrial applications. By shrinking the size of the thermoelements, or legs, of these devices, it becomes possible to handle much higher heat fluxes, as well as operate at much lower currents and higher voltages that are more compatible with electronic components. The miniaturization of state-of-the-art thermoelectric module technology based on Bi2Te3 alloys is limited due to mechanical and manufacturing constraints for both leg dimensions (100-200 gm thick minimum) and the number of legs (100-200 legs maximum). We are investigating the development of novel microdevices combining high thermal conductivity substrate materials such as diamond, thin film metallization and patterning technology, and electrochemical deposition of thick thermoelectric films. It is anticipated that thermoelectric microcoolers with thousands of thermocouples and capable of pumping more than 200 W/sq cm over a 30 to 60 K temperature difference can be fabricated. In this paper, we report on our progress in developing an electrochemical deposition process for obtaining 10-50 microns thick films of Bi2Te3 and its solid solutions. Results presented here indicate that good quality n-type Bi2Te3, n-type Bi2Te(2.95)Se(0.05) and p-type Bi(0.5)Sb(1.5)Te3 thick films can be deposited by this technique. Some details about the fabrication of the miniature thermoelements are also described.

Aerosol chemical vapor deposition of metal oxide films

DOEpatents

Ott, K.C.; Kodas, T.T.

1994-01-11

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO₂ Films Deposited by Atomic Layer Deposition.

PubMed

Wilson, Rachel L; Simion, Cristian Eugen; Blackman, Christopher S; Carmalt, Claire J; Stanoiu, Adelina; Di Maggio, Francesco; Covington, James A

2018-03-01

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO₂ and inferred for TiO₂. In this paper, TiO₂ thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO₂ films were exposed to different concentrations of CO, CH₄, NO₂, NH₃ and SO₂ to evaluate their gas sensitivities. These experiments showed that the TiO₂ film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH₄ and NH₃ exposure indicated typical n -type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

Ultralow Damping in Nanometer-Thick Epitaxial Spinel Ferrite Thin Films.

PubMed

Emori, Satoru; Yi, Di; Crossley, Sam; Wisser, Jacob J; Balakrishnan, Purnima P; Khodadadi, Behrouz; Shafer, Padraic; Klewe, Christoph; N'Diaye, Alpha T; Urwin, Brittany T; Mahalingam, Krishnamurthy; Howe, Brandon M; Hwang, Harold Y; Arenholz, Elke; Suzuki, Yuri

2018-06-08

Pure spin currents, unaccompanied by dissipative charge flow, are essential for realizing energy-efficient nanomagnetic information and communications devices. Thin-film magnetic insulators have been identified as promising materials for spin-current technology because they are thought to exhibit lower damping compared with their metallic counterparts. However, insulating behavior is not a sufficient requirement for low damping, as evidenced by the very limited options for low-damping insulators. Here, we demonstrate a new class of nanometer-thick ultralow-damping insulating thin films based on design criteria that minimize orbital angular momentum and structural disorder. Specifically, we show ultralow damping in <20 nm thick spinel-structure magnesium aluminum ferrite (MAFO), in which magnetization arises from Fe 3+ ions with zero orbital angular momentum. These epitaxial MAFO thin films exhibit a Gilbert damping parameter of ∼0.0015 and negligible inhomogeneous linewidth broadening, resulting in narrow half width at half-maximum linewidths of ∼0.6 mT around 10 GHz. Our findings offer an attractive thin-film platform for enabling integrated insulating spintronics.

Thickness Dependent Structural and Dielectric Properties of Calcium Copper Titanate Thin Films Produced by Spin-Coating Method for Microelectronic Devices

NASA Astrophysics Data System (ADS)

Thiruramanathan, P.; Sankar, S.; Marikani, A.; Madhavan, D.; Sharma, Sanjeev K.

2017-07-01

Calcium copper titanate (CaCu3Ti4O12, CCTO) thin films have been deposited on platinized silicon [(111)Pt/Ti/SiO2/Si] substrate through a sol-gel spin coating technique and annealed at 600-900°C with a variation of 100°C per sample for 3 h. The activation energy for crystalline growth, as well as optimal annealing temperature (900°C) of the CCTO crystallites was studied by x-ray diffraction analysis (XRD). Thickness dependent structural, morphological, and optical properties of CCTO thin films were observed. The field emission scanning electron microscopy (FE-SEM) verified that the CCTO thin films are uniform, fully covered, densely packed, and the particle size was found to be increased with film thickness. Meanwhile, quantitative analysis of dielectric properties (interfacial capacitance, dead layers, and bulk dielectric constant) of CCTO thin film with metal-insulator-metal (M-I-M) structures has been investigated systematically using a series capacitor model. Room temperature dielectric properties of all the samples exhibit dispersion at low frequencies, which can be explained based on Maxwell-Wagner two-layer models and Koop's theory. It was found that the 483 nm thick CCTO film represents a high dielectric constant ( ɛ r = 3334), low loss (tan δ = 3.54), capacitance ( C = 4951 nF), which might satisfy the requirements of embedded capacitor.

Aerosol chemical vapor deposition of metal oxide films

DOEpatents

Ott, Kevin C.; Kodas, Toivo T.

1994-01-01

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

Applications of film thickness equations

NASA Technical Reports Server (NTRS)

Hamrock, B. J.; Dowson, D.

1983-01-01

A number of applications of elastohydrodynamic film thickness expressions were considered. The motion of a steel ball over steel surfaces presenting varying degrees of conformity was examined. The equation for minimum film thickness in elliptical conjunctions under elastohydrodynamic conditions was applied to roller and ball bearings. An involute gear was also introduced, it was again found that the elliptical conjunction expression yielded a conservative estimate of the minimum film thickness. Continuously variable-speed drives like the Perbury gear, which present truly elliptical elastohydrodynamic conjunctions, are favored increasingly in mobile and static machinery. A representative elastohydrodynamic condition for this class of machinery is considered for power transmission equipment. The possibility of elastohydrodynamic films of water or oil forming between locomotive wheels and rails is examined. The important subject of traction on the railways is attracting considerable attention in various countries at the present time. The final example of a synovial joint introduced the equation developed for isoviscous-elastic regimes of lubrication.

Simple Methods for Production of Nanoscale Metal Oxide Films from Household Sources

ERIC Educational Resources Information Center

Campbell, Dean J.; Baliss, Michelle S.; Hinman, Jordan J.; Ziegenhorn, John W.; Andrews, Mark J.; Stevenson, Keith J.

2013-01-01

Production of thin metal oxide films was recently explored as part of an outreach program with a goal of producing nanoscale structures with household items. Household items coated with various metals or titanium compounds can be heated to produce colorful films with nanoscale thicknesses. As part of a materials chemistry laboratory experiment…

Surface plasmon resonance in electrodynamically coupled Au NPs monolayer/dielectric spacer/Al film nanostructure: tuning by variation of spacer thickness

NASA Astrophysics Data System (ADS)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Liakhov, Yuriy F.; Tomchuk, Anastasiya V.; Haftel, Michael; Pinchuk, Anatoliy O.

2017-10-01

Effects of plasmonic coupling between metal nanoparticles and thin metal films separated by thin dielectric film-spacers have been studied by means of light extinction in three-layer planar Au NPs monolayer/dielectric (shellac) film/Al film nanostructure. The influence of coupling on the spectral characteristics of the Au NPs SPR extinction peak has been analyzed with spacer thickness, varied from 3 to 200 nm. The main observed features are a strong red shift (160 nm), and non-monotonical behavior of the magnitude and width of Au NPs SPR, as the spacer thickness decreased. The appearance of an intensive gap mode peak was observed at a spacer thickness smaller than approximately 30 nm, caused by the hybridization of the Au NPs SPR mode and gap mode in the presence of the Al film. Additionally, the appreciable enhancement (5.6 times) of light extinction by the Au NPs monolayer in the presence of Al film has been observed. A certain value of dielectric spacer thickness (70 nm) exists at which such enhancement is maximal.

LTCC Thick Film Process Characterization

DOE PAGES

Girardi, M. A.; Peterson, K. A.; Vianco, P. T.

2016-05-01

Low temperature cofired ceramic (LTCC) technology has proven itself in military/space electronics, wireless communication, microsystems, medical and automotive electronics, and sensors. The use of LTCC for high frequency applications is appealing due to its low losses, design flexibility and packaging and integration capability. Moreover, we summarize the LTCC thick film process including some unconventional process steps such as feature machining in the unfired state and thin film definition of outer layer conductors. The LTCC thick film process was characterized to optimize process yields by focusing on these factors: 1) Print location, 2) Print thickness, 3) Drying of tapes and panels,more » 4) Shrinkage upon firing, and 5) Via topography. Statistical methods were used to analyze critical process and product characteristics in the determination towards that optimization goal.« less

Anomalous electron transport in metal/carbon multijunction devices by engineering of the carbon thickness and selecting metal layer

NASA Astrophysics Data System (ADS)

Dwivedi, Neeraj; Dhand, Chetna; Rawal, Ishpal; Kumar, Sushil; Malik, Hitendra K.; Lakshminarayanan, Rajamani

2017-06-01

A longstanding concern in the research of amorphous carbon films is their poor electrical conductivity at room temperature which constitutes a major barrier for the development of cost effective electronic and optoelectronic devices. Here, we propose metal/carbon hybrid multijunction devices as a promising facile way to overcome room temperature electron transport issues in amorphous carbon films. By the tuning of carbon thickness and swapping metal layers, we observe giant (upto ˜7 orders) reduction of electrical resistance in metal/carbon multijunction devices with respect to monolithic amorphous carbon device. We engineer the maximum current (electrical resistance) from about 10-7 to 10-3 A (˜107 to 103 Ω) in metal (Cu or Ti)/carbon hybrid multijunction devices with a total number of 10 junctions. The introduction of thin metal layers breaks the continuity of relatively higher resistance carbon layer as well as promotes the nanostructuring of carbon. These contribute to low electrical resistance of metal/carbon hybrid multijunction devices, with respect to monolithic carbon device, which is further reduced by decreasing the thickness of carbon layers. We also propose and discuss equivalent circuit model to explain electrical resistance in monolithic carbon and metal/carbon multijunction devices. Cu/carbon multijunction devices display relatively better electrical transport than Ti/carbon devices owing to low affinity of Cu with carbon that restricts carbide formation. We also observe that in metal/carbon multijunction devices, the transport mechanism changes from Poole-Frenkel/Schottky model to the hopping model with a decrease in carbon thickness. Our approach opens a new route to develop carbon-based inexpensive electronic and optoelectronic devices.

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

DOEpatents

Hawkins, G.A.; Clarke, J.

1975-10-31

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Properties of thin silver films with different thickness

NASA Astrophysics Data System (ADS)

Zhao, Pei; Su, Weitao; Wang, Reng; Xu, Xiaofeng; Zhang, Fengshan

2009-01-01

In order to investigate optical properties of silver films with different film thickness, multilayer composed of thin silver film sandwiched between ZnS films are sputtered on the float glass. The crystal structures, optical and electrical properties of films are characterized by various techniques, such as X-ray diffraction (XRD), spectrum analysis, etc. The optical constants of thin silver film are calculated by fitting the transmittance ( T) and reflectance ( R) spectrum of the multilayer. Electrical and optical properties of silver films thinner than 6.2 nm exhibit sharp change. However, variation becomes slow as film thickness is larger than 6.2 nm. The experimental results indicate that 6.2 nm is the optimum thickness for properties of silver.

Bismuth molybdate thick films as ethanol sensor

NASA Astrophysics Data System (ADS)

Jain, Kiran; Kumar, Vipin; Gupta, H. P.; Rastogi, A. C.

2003-10-01

Ethanol sensitivity of bismuth molybdate thick films and sintered pellets were investigated. Sintered pellets were prepared by traditional ceramic processing. Thick films were prepared by metallorganic decomposition process. Ethanol gas sensitivity was measured at various temperatures and concentrations. Thick films of alpha phase bismuth molybdate prepared by spray pyrolysis showed a very fast response to ethanol detection. The response time for the bulk samples is about 40 sec which decreased to about 6 sec for thick films at an operating temperature of 300°C. An extremely low level approximately 10 ppm detection and fast response makes this technique ideal for sensor element fabrication for detection and estimation of alcohol in breath-analyzer. Unlike SnO2, the resistance of these sensors is not affected by humidity at the operating temperature.

Surface-properties relationship in sputtered Ag thin films: Influence of the thickness and the annealing temperature in nitrogen

NASA Astrophysics Data System (ADS)

Guillén, C.; Herrero, J.

2015-01-01

Metal layers with high roughness and electrical conductivity are required as back-reflector electrodes in several optoelectronic devices. The metal layer thickness and the process temperature should be adjusted to reduce the material and energetic costs for the electrode preparation. Here, Ag thin films with thickness ranging from 30 to 200 nm have been deposited by sputtering at room temperature on glass substrates. The structure, morphology, optical and electrical properties of the films have been analyzed in the as-grown conditions and after thermal treatment in flowing nitrogen at various temperatures in the 150-550 °C range. The surface texture has been characterized by the root-mean-square roughness and the correlation length coefficients, which are directly related to the electrical resistivity and the light-scattering parameter (reflectance haze) for the various samples. The increment in the reflectance haze has been used to detect surface agglomeration processes that are found dependent on both the film thickness and the annealing temperature. A good compromise between light-scattering and electrical conductivity has been achieved with 70 nm-thick Ag films after 350 °C heating.

Thick adherent dielectric films on plastic substrates and method for depositing same

DOEpatents

Wickboldt, Paul; Ellingboe, Albert R.; Theiss, Steven D.; Smith, Patrick M.

2002-01-01

Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 .mu.m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N.sub.2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 .mu.m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.

Film thickness for different regimes of fluid-film lubrication

NASA Technical Reports Server (NTRS)

Hamrock, B. J.

1980-01-01

Film thickness equations are provided for four fluid-film lubrication regimes found in elliptical contacts. These regimes are isoviscous-rigid; viscous-rigid; elastohydrodynamic lubrication of low-elastic-modulus materials (soft EHL), or isoviscous-elastic; and elastohydrodynamic lubrication of high-elastic-modulus materials (hard EHL), or viscous-elastic. The influence or lack of influence of elastic and viscous effects is the factor that distinguishes these regimes. The results are presented as a map of the lubrication regimes, with film thickness contours on a log-log grid of the viscosity and elasticity for three values of the ellipticity parameter.

The Effect of Carrier Properties on the Ballistic Processing of Sn-0.7 Cu Thick Films

NASA Astrophysics Data System (ADS)

Hille, David M.

The need for metallic films has increased since the creation of electronic components. The continued miniaturization of systems and components has led to a greater demand for both thick and thin films, especially in the technology field. Computers, hand held devices, and solar cells are a few of the multitudes of uses for these films. This thesis investigates a novel additive manufacturing process known as Ballistic Manufacturing (BM), invented at the Advanced Materials Processing Lab (AMPL) at San Diego State University. Lead free solder (Tin (Sn)-0.7%Copper (Cu)) was chosen as the testing material due to its low melting temperature. The effects of varying thermal conductivity via the change in carrier material type, the effect of raising substrate temperature, and surface finish differences were investigated. An increase in thermal conductivity resulted in an increase in film thickness and decrease in cell size. As substrate temperature was raised, film thickness decreased, while cell size decreased. Surface finish provided a proof of concept to the transfer of substrate features to the resultant film surface. Evaluation of dendritic microstructures led to relative cooling rates reflective of changes in parameters. The mechanical behavior was also investigated using tensile tests to determine stress-stain relationships and measure elastic modulus. With the current work of this thesis, and previous work by Cavero and Stewart, Ballistic Manufacturing is proven to be an alternative method in the production of metallic films.

The ratioed image film thickness meter

NASA Astrophysics Data System (ADS)

Husen, Nicholas M.; Liu, Tianshu; Sullivan, John P.

2018-06-01

A technique for measuring the thickness of a fluorescent oil film is presented. Incident light is cast upon the oil film and the intensity of the luminescent signal from the fluorescent dye is ratioed with the intensity of the incident light which is scattered from the surface of the model. The quotient is independent of the intensity of the incident light and proportional to the film thickness. Experiments are presented supporting that for sufficiently thin films the ratio is independent of the intensity of the incident light as well as independent of the angle from which the experiment is imaged and the angle from which the incident light is cast.

Thickness-dependent magnetic and electrical transport properties of epitaxial La 0.7Sr 0.3CoO 3 films

DOE PAGES

Li, Binzhi; Chopdekar, Rajesh V.; Kane, Alexander M.; ...

2017-04-04

The thickness-dependent magnetic and electrical transport properties of nearly strain-free La 0.7Sr 0.3CoO 3 (LSCO) films grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2AlTaO 6) 0.7 substrates were systematically studied. A crossover from ferromagnetic/metallic to non-magnetic/insulating behavior occurs at a critical thickness (~8 nm) that is significantly smaller than LSCO films under larger strains in reported literature. X-ray absorption measurements revealed that the difference of functional properties at reduced film thicknesses was accompanied by changes in the valence state of Co ions at the film/substrate interface.

Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

NASA Astrophysics Data System (ADS)

Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

2018-03-01

Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

PubMed Central

Wilson, Rachel L.; Blackman, Christopher S.; Carmalt, Claire J.; Stanoiu, Adelina; Di Maggio, Francesco

2018-01-01

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO2 and inferred for TiO2. In this paper, TiO2 thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO2 films were exposed to different concentrations of CO, CH4, NO2, NH3 and SO2 to evaluate their gas sensitivities. These experiments showed that the TiO2 film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH4 and NH3 exposure indicated typical n-type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated. PMID:29494504

The effect of wet film thickness on VOC emissions from a finishing varnish.

PubMed

Lee, Shun-Cheng; Kwok, Ngai-Hong; Guo, Hai; Hung, Wing-Tat

2003-01-20

Finishing varnishes, a typical type of oil-based varnishes, are widely used to shine metal, wood trim and cabinet surfaces in Hong Kong. The influence of wet film thickness on volatile organic compound (VOC) emissions from a finishing varnish was studied in an environmental test chamber. The varnish was applied on an aluminium foil with three different wet film thickness (35.2, 69.9 and 107.3 microm). The experimental conditions were 25.0 degrees C, 50.0% relative humidity (RH) with an air exchange rate of 0.5 h(-1). The concentrations of the major VOCs were monitored for the first 10 h. The air samples were collected by canisters and analysed by gas chromatography/mass selective detector (GC/MSD). Six major VOCs including toluene, chlorobenzene, ethylbenzene, m,p-xylene, o-xylene and 1,3,5-trimethylbenzene were identified and quantified. Marked differences were observed for three different film thicknesses. VOC concentrations increased rapidly during the first few hours and then decreased as the emission rates declined. The thicker the wet film, the higher the VOC emissions. A model expression included an exponentially decreasing emission rate of varnish film. The concentration and time data measured in the chamber were used to determine the parameters of empirical emission rate model. The present work confirmed that the film thickness of varnish influenced markedly the concentrations and emissions of VOCs. Copyright 2002 Elsevier Science B.V.

Effect of geometry on hydrodynamic film thickness

NASA Technical Reports Server (NTRS)

Brewe, D. E.; Hamrock, B. J.; Taylor, C. M.

1978-01-01

The influence of geometry on the isothermal hydrodynamic film separating two rigid solids was investigated. Pressure-viscosity effects were not considered. The minimum film thickness is derived for fully flooded conjunctions by using the Reynolds conditions. It was found that the minimum film thickness had the same speed, viscosity, and load dependence as Kapitza's classical solution. However, the incorporation of Reynolds boundary conditions resulted in an additional geometry effect. Solutions using the parabolic film approximation are compared with those using the exact expression for the film in the analysis. Contour plots are shown that indicate in detail the pressure developed between the solids.

Changes in the temperature-dependent specific volume of supported polystyrene films with film thickness.

PubMed

Huang, Xinru; Roth, Connie B

2016-06-21

Recent studies have measured or predicted thickness-dependent shifts in density or specific volume of polymer films as a possible means of understanding changes in the glass transition temperature Tg(h) with decreasing film thickness with some experimental works claiming unrealistically large (25%-30%) increases in film density with decreasing thickness. Here we use ellipsometry to measure the temperature-dependent index of refraction of polystyrene (PS) films supported on silicon and investigate the validity of the commonly used Lorentz-Lorenz equation for inferring changes in density or specific volume from very thin films. We find that the density (specific volume) of these supported PS films does not vary by more than ±0.4% of the bulk value for film thicknesses above 30 nm, and that the small variations we do observe are uncorrelated with any free volume explanation for the Tg(h) decrease exhibited by these films. We conclude that the derivation of the Lorentz-Lorenz equation becomes invalid for very thin films as the film thickness approaches ∼20 nm, and that reports of large density changes greater than ±1% of bulk for films thinner than this likely suffer from breakdown in the validity of this equation or in the difficulties associated with accurately measuring the index of refraction of such thin films. For larger film thicknesses, we do observed small variations in the effective specific volume of the films of 0.4 ± 0.2%, outside of our experimental error. These shifts occur simultaneously in both the liquid and glassy regimes uniformly together starting at film thicknesses less than ∼120 nm but appear to be uncorrelated with Tg(h) decreases; possible causes for these variations are discussed.

Non-contact online thickness measurement system for metal films based on eddy current sensing with distance tracking technique.

PubMed

Li, Wei; Wang, Hongbo; Feng, Zhihua

2016-04-01

This paper proposes an online, non-contact metal film thickness measurement system based on eddy current sensing. The slope of the lift-off curve (LOC) is used for characterizing target thickness. Theoretical derivation was conducted to prove that the slope is independent of the lift-off variation. In practice, the measurement has some immunity to the lift-off, but not perfect. The slope of LOC is still affected at some extent by the lift-off. Hence, a height tracking system was also proposed, which could stabilize the distance between the sensor and the target and significantly reduce the lift-off effect. The height tracking system contains a specially designed probe, which could vibrate rapidly to obtain a fast measurement speed, and its height can be adjusted up and down continuously to stabilize the lift-off. The sensor coil in the thickness measurement system was also used as the height sensor in the height tracking system. Several experiments were conducted to test the system performances under static and dynamic conditions. This measurement system demonstrated significant advantages, such as simple and clear conversion between the slope of LOC and target thickness, high resolution and stability, and minimized effect of lift-off variation.

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

NASA Astrophysics Data System (ADS)

Best, James P.; Michler, Johann; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Maeder, Xavier; Röse, Silvana; Oberst, Vanessa; Liu, Jinxuan; Walheim, Stefan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof

2015-09-01

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (EITO ≈ 96.7 GPa, EHKUST-1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

Study on thick film spin-on carbon hardmask

NASA Astrophysics Data System (ADS)

Kim, Taeho; Kim, Youngmin; Hwang, Sunmin; Lee, Hyunsoo; Han, Miyeon; Lim, Sanghak

2017-03-01

A thick spin-on carbon hardmask (SOH) material is designed to overcome inherent problems of amorphous deposited carbon layer (ACL) and thick photoresist. For ACL in use of semiconductor production process, especially when film thickness from sub-micrometer up to few micrometers is required, not only its inherent low transparency at long wavelength light often causes alignment problems with under layers, but also considerable variation of film thickness within a wafer can also cause patterning problems. To avoid these issues, a thick SOH is designed with monomers of high transparency and good solubility at the same time. In comparison with photoresist, the SOH has good etch resistance and high thermal stability, and it provides wide process window of decreased film thickness and increased thermal budget up to 400°C after processes such as high temperature deposition of SiON. In order to achieve high thickness along with uniform film, many solvent factors was considered such as solubility parameter, surface tension, vapor pressure, and others. By optimizing many solvent factors, we were able to develop a product with a good coating performance

The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X. J.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2014-10-28

The significant effect of the thickness of Ni film on the performance of the Ohmic contact of Ni/Au to p-GaN is studied. The Ni/Au metal films with thickness of 15/50 nm on p-GaN led to better electrical characteristics, showing a lower specific contact resistivity after annealing in the presence of oxygen. Both the formation of a NiO layer and the evolution of metal structure on the sample surface and at the interface with p-GaN were checked by transmission electron microscopy and energy-dispersive x-ray spectroscopy. The experimental results indicate that a too thin Ni film cannot form enough NiO to decrease themore » barrier height and get Ohmic contact to p-GaN, while a too thick Ni film will transform into too thick NiO cover on the sample surface and thus will also deteriorate the electrical conductivity of sample.« less

Thick crystalline films on foreign substrates

DOEpatents

Smith, Henry I.; Atwater, Harry A.; Geis, Michael W.

1986-01-01

To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (<1 .mu.m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns.

Correlation of Gear Surface Fatigue Lives to Lambda Ratio (Specific Film Thickness)

NASA Technical Reports Server (NTRS)

Krantz, Timothy Lewis

2013-01-01

The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness being the ratio of lubricant film thickness to the composite surface roughness. Three studies done at NASA to investigate gearing pitting life are revisited in this work. All tests were done at a common load. In one study, ground gears were tested using a variety of lubricants that included a range of viscosities, and therefore the gears operated with differing film thicknesses. In a second and third study, the performance of gears with ground teeth and superfinished teeth were assessed. Thicker oil films provided longer lives as did improved surface finish. These datasets were combined into a common dataset using the concept of specific film thickness. This unique dataset of more 258 tests provides gear designers with some qualitative information to make gear design decisions.

Integrated thick-film nanostructures based on spinel ceramics

PubMed Central

2014-01-01

Integrated temperature-humidity-sensitive thick-film structures based on spinel-type semiconducting ceramics of different chemical compositions and magnesium aluminate ceramics were prepared and studied. It is shown that temperature-sensitive thick-film structures possess good electrophysical characteristics in the region from 298 to 358 K. The change of electrical resistance in integrated thick-film structures is 1 order, but these elements are stable in time and can be successfully used for sensor applications. PMID:24670141

Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

PubMed Central

Liewhiran, Chaikarn; Phanichphant, Sukon

2007-01-01

ZnO nanoparticles were produced by flame spray pyrolysis (FSP) using zinc naphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%). The particle properties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced by mixing the particles into an organic paste composed of terpineol and ethyl cellulose as a vehicle binder and were fabricated by doctor-blade technique with various thicknesses (5, 10, 15 μm). The morphology of the sensing films was analyzed by SEM and EDS analyses. The gas sensing characteristics to ethanol (25-250 ppm) were evaluated as a function of film thickness at 400°C in dry air. The relationship between thickness and ethanol sensing characteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes were investigated. The effects of film thickness, as well as the cracking phenomenon, though, many cracks were observed for thicker sensing films. Crack widths increased with increasing film thickness. The film thickness, cracking and ethanol concentration have significant effect on the sensing characteristics. The sensing characteristics with various thicknesses were compared, showing the tendency of the sensitivity to ethanol decreased with increasing film thickness and response time. The relationship between gas sensing properties and film thickness was discussed on the basis of diffusively and reactivity of the gases inside the oxide films. The thinnest sensing film (5 μm) showed the highest sensitivity and the fastest response time (within seconds).

Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications

NASA Astrophysics Data System (ADS)

Choi, Kyeong-Keun; Park, Chan-Gyung; Kim, Deok-kee

2016-01-01

The electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition were investigated for through-silicon via (TSV) and metal-insulator-metal applications at temperatures below 300 °C. ZrO2 films were able to be conformally deposited on the scallops of 50-µm-diameter, 100-µm-deep TSV holes. The mean breakdown field of 30-nm-thick ZrO2 films on 30-nm-thick Ta(N) increased about 41% (from 2.7 to 3.8 MV/cm) upon H2 plasma treatment. With the plasma treatment, the breakdown field of the film increased and the temperature coefficient of capacitance decreased significantly, probably as a result of the decreased carbon concentration in the film.

Extensive Penetration of Evaporated Electrode Metals into Fullerene Films: Intercalated Metal Nanostructures and Influence on Device Architecture.

PubMed

Zhang, Guangye; Hawks, Steven A; Ngo, Chilan; Schelhas, Laura T; Scholes, D Tyler; Kang, Hyeyeon; Aguirre, Jordan C; Tolbert, Sarah H; Schwartz, Benjamin J

2015-11-18

Although it is known that evaporated metals can penetrate into films of various organic molecules that are a few nanometers thick, there has been little work aimed at exploring the interaction of the common electrode metals used in devices with fullerene derivatives, such as organic photovoltaics (OPVs) or perovskite solar cells that use fullerenes as electron transport layers. In this paper, we show that when commonly used electrode metals (e.g., Au, Ag, Al, Ca, etc.) are evaporated onto films of fullerene derivatives (such as [6,6]-phenyl-C61-butyric acid methyl ester (PCBM)), the metal penetrates many tens of nanometers into the fullerene layer. This penetration decreases the effective electrical thickness of fullerene-based sandwich structure devices, as measured by the device's geometric capacitance, and thus significantly alters the device physics. For the case of Au/PCBM, the metal penetrates a remarkable 70 nm into the fullerene, and we see penetration of similar magnitude in a wide variety of fullerene derivative/evaporated metal combinations. Moreover, using transmission electron microscopy to observed cross-sections of the films, we show that when gold is evaporated onto poly(3-hexylthiophene) (P3HT)/PCBM sequentially processed OPV quasi-bilayers, Au nanoparticles with diameters of ∼3-20 nm are formed and are dispersed entirely throughout the fullerene-rich overlayer. The plasmonic absorption and scattering from these nanoparticles are readily evident in the optical transmission spectrum, demonstrating that the interpenetrated metal significantly alters the optical properties of fullerene-rich active layers. This opens a number of possibilities in terms of contact engineering and light management so that metal penetration in devices that use fullerene derivatives could be used to advantage, making it critical that researchers are aware of the electronic and optical consequences of exposing fullerene-derivative films to evaporated electrode metals.

Effect of geometry on hydrodynamic film thickness

NASA Technical Reports Server (NTRS)

Brewe, D. E.; Hamrock, B. J.; Taylor, C. M.

1978-01-01

The influence of geometry on the isothermal hydrodynamic film separating two rigid solids was investigated. Pressure-viscosity effects were not considered. The minimum film thickness is derived for fully flooded conjunctions by using the Reynolds boundary conditions. It was found that the minimum film thickness had the same speed, viscosity, and load dependence as Kapitza's classical solution. However, the incorporation of Reynolds boundary conditions resulted in an additional geometry effect. Solutions using the parabolic film approximation are compared with those using the exact expression for the film in the analysis. Contour plots are shown that indicate in detail the pressure developed between the solids.

Vacuum casting of thick polymeric films

NASA Technical Reports Server (NTRS)

Cuddihy, E. F.; Moacanin, J.

1979-01-01

Bubble formation and layering, which often plague vacuum-evaporated films, are prevented by properly regulating process parameters. Vacuum casting may be applicable to forming thick films of other polymer/solvent solutions.

Measuring Metal Thickness With an Electric Probe

NASA Technical Reports Server (NTRS)

Shumka, A.

1986-01-01

Thickness of metal parts measured from one side with aid of Kelvin probe. Method developed for measuring thickness of end plate on sealed metal bellows from outside. Suitable for thicknesses of few thousandth's of inch (few hundred micrometers). Method also used to determine thickness of metal coatings applied by sputtering, electroplating, and flame spraying.

Thick crystalline films on foreign substrates

DOEpatents

Smith, H.I.; Atwater, H.A.; Geis, M.W.

1986-03-18

To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 [mu]m) film on a foreign substrate, the film is formed so as to be thin (<1 [mu]m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns. 2 figs.

Platinum group metals as flux pinning additions in screen printed superconducting YBa 2Cu 3O 7-δ thick films

NASA Astrophysics Data System (ADS)

Langhorn, J.; Bi, Y. J.; Abell, J. S.

1996-02-01

Platinum group metal additions made to thick films of YBCO have induced significant improvements in the superconducting properties, in particular critical current densities ( Jc). Values in excess of 7 × 10 3 A cm -2 at 77 K and zero applied field have been measured. Optical and transmission electron microscopy have shown a homogeneous distribution of sub-micron sized, and larger highly anisotropic 211, believed to result from a reaction between Pt and YBCO to create nucleation sites for 211 precipitates. Indirect supporting thermal analysis evidence for this reaction is presented. An increased density of dislocations associated with the {123}/{211} interface suggests that refined 211 precipitates may act as heterogeneous nucleation sites for flux pinning defects. Similar effects have been observed for additions of other platinum group metals (Rh, Pd).

Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

NASA Astrophysics Data System (ADS)

Osabe, Keiichi; Kawai, Kotaro

2017-03-01

In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

Analyzing optical properties of thin vanadium oxide films through semiconductor-to-metal phase transition using spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Sun, Jianing; Pribil, Greg K.

2017-11-01

We investigated the optical behaviors of vanadium dioxide (VO2) films through the semiconductor-to-metal (STM) phase transition using spectroscopic ellipsometry. Correlations between film thickness and refractive index were observed resulting from the absorbing nature of these films. Simultaneously analyzing data at multiple temperatures using Kramers-Kronig consistent oscillator models help identify film thickness. Nontrivial variations in resulting optical constants were observed through STM transition. As temperature increases, a clear increase is observed in near infrared absorption due to Drude losses that accompany the transition from semiconducting to metallic phases. Thin films grown on silicon and sapphire substrate present different optical properties and thermal hysteresis due to lattice stress and compositional differences.

Measurement of thickness of film deposited on the plasma-facing wall in the QUEST tokamak by colorimetry.

PubMed

Wang, Z; Hanada, K; Yoshida, N; Shimoji, T; Miyamoto, M; Oya, Y; Zushi, H; Idei, H; Nakamura, K; Fujisawa, A; Nagashima, Y; Hasegawa, M; Kawasaki, S; Higashijima, A; Nakashima, H; Nagata, T; Kawaguchi, A; Fujiwara, T; Araki, K; Mitarai, O; Fukuyama, A; Takase, Y; Matsumoto, K

2017-09-01

After several experimental campaigns in the Kyushu University Experiment with Steady-state Spherical Tokamak (QUEST), the originally stainless steel plasma-facing wall (PFW) becomes completely covered with a deposited film composed of mixture materials, such as iron, chromium, carbon, and tungsten. In this work, an innovative colorimetry-based method was developed to measure the thickness of the deposited film on the actual QUEST wall. Because the optical constants of the deposited film on the PFW were position-dependent and the extinction coefficient k 1 was about 1.0-2.0, which made the probing light not penetrate through some thick deposited films, the colorimetry method developed can only provide a rough value range of thickness of the metal-containing film deposited on the actual PFW in QUEST. However, the use of colorimetry is of great benefit to large-area inspections and to radioactive materials in future fusion devices that will be strictly prohibited from being taken out of the limited area.

Thick Films: Electronic Applications. (Latest citations from the Aerospace Database)

NASA Technical Reports Server (NTRS)

1996-01-01

The bibliography contains citations concerning the design, development, fabrication, and evaluation of thick film electronic devices. Thick film solar cells, thick films for radiation conduction, deposition processes, conductive inks are among the topics discussed. Applications in military and civilian avionics are examined.

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Best, James P., E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Michler, Johann; Maeder, Xavier

2015-09-07

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E{sub ITO} ≈ 96.7 GPa, E{sub HKUST−1} ≈ 22.0 GPa).more » For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.« less

Droplet-air collision dynamics: Evolution of the film thickness

NASA Astrophysics Data System (ADS)

Opfer, L.; Roisman, I. V.; Venzmer, J.; Klostermann, M.; Tropea, C.

2014-01-01

This study is devoted to the experimental and theoretical investigation of aerodynamic drop breakup phenomena. We show that the phenomena of drop impact onto a rigid wall, drop binary collisions, and aerodynamic drop deformation are similar if the correct scaling is applied. Then we use observations of the deforming drop to estimate the evolution of the film thickness of the bag, the value that determines the size of the fine child drops produced by bag breakup. This prediction of film thickness, based on film kinematics, is validated for the initial stage by direct drop thickness measurements and at the latest stage by the data obtained from the velocity of hole expansion in the film. It is shown that the film thickness correlates well with the dimensionless position of the bag apex.

Comparison of the agglomeration behavior of thin metallic films on SiO2

NASA Astrophysics Data System (ADS)

Gadkari, P. R.; Warren, A. P.; Todi, R. M.; Petrova, R. V.; Coffey, K. R.

2005-07-01

The stability of continuous metallic thin films on insulating oxide surfaces is of interest to applications such as semiconductor interconnections and gate engineering. In this work, we report the study of the formation of voids and agglomeration of initially continuous Cu, Au, Ru and Pt thin films deposited on amorphous thermally grown SiO2 surfaces. Polycrystalline thin films having thicknesses in the range of 10-100 nm were ultrahigh vacuum sputter deposited on thermally grown SiO2 surfaces. The films were annealed at temperatures in the range of 150-800 °C in argon and argon+3% hydrogen gases. Scanning electron microscopy was used to investigate the agglomeration behavior, and transmission electron microscopy was used to characterize the microstructure of the as-deposited and annealed films. The agglomeration sequence in all of the films is found to follow a two step process of void nucleation and void growth. However, void growth in Au and Pt thin films is different from Cu and Ru thin films. Residual stress and adhesion were observed to play an important part in deciding the mode of void growth in Au and Pt thin films. Last, it is also observed that the tendency for agglomeration can be reduced by encapsulating the metal film with an oxide overlayer.

Damage in a Thin Metal Film by High-Power Terahertz Radiation.

PubMed

Agranat, M B; Chefonov, O V; Ovchinnikov, A V; Ashitkov, S I; Fortov, V E; Kondratenko, P S

2018-02-23

We report on the experimental observation of high-power terahertz-radiation-induced damage in a thin aluminum film with a thickness less than a terahertz skin depth. Damage in a thin metal film produced by a single terahertz pulse is observed for the first time. The damage mechanism induced by a single terahertz pulse could be attributed to thermal expansion of the film causing debonding of the film from the substrate, film cracking, and ablation. The damage pattern induced by multiple terahertz pulses at fluences below the damage threshold is quite different from that observed in single-pulse experiments. The observed damage pattern resembles an array of microcracks elongated perpendicular to the in-plane field direction. A mechanism related to microcracks' generation and based on a new phenomenon of electrostriction in thin metal films is proposed.

Damage in a Thin Metal Film by High-Power Terahertz Radiation

NASA Astrophysics Data System (ADS)

Agranat, M. B.; Chefonov, O. V.; Ovchinnikov, A. V.; Ashitkov, S. I.; Fortov, V. E.; Kondratenko, P. S.

2018-02-01

We report on the experimental observation of high-power terahertz-radiation-induced damage in a thin aluminum film with a thickness less than a terahertz skin depth. Damage in a thin metal film produced by a single terahertz pulse is observed for the first time. The damage mechanism induced by a single terahertz pulse could be attributed to thermal expansion of the film causing debonding of the film from the substrate, film cracking, and ablation. The damage pattern induced by multiple terahertz pulses at fluences below the damage threshold is quite different from that observed in single-pulse experiments. The observed damage pattern resembles an array of microcracks elongated perpendicular to the in-plane field direction. A mechanism related to microcracks' generation and based on a new phenomenon of electrostriction in thin metal films is proposed.

Film thickness for different regimes of fluid-film lubrication. [elliptical contacts

NASA Technical Reports Server (NTRS)

Hamrock, B. J.; Dowson, D.

1983-01-01

Mathematical formulas are presented which express the dimensionless minimum film thickness for the four lubrication regimes found in elliptical contacts: isoviscous-rigid regime; piezoviscous-rigid regime; isoviscous-elastic regime; and piezoviscous-elastic regime. The relative importance of pressure on elastic distortion and lubricant viscosity is the factor that distinguishes these regimes for a given conjunction geometry. In addition, these equations were used to develop maps of the lubrication regimes by plotting film thickness contours on a log-log grid of the dimensionless viscosity and elasticity parameters for three values of the ellipticity parameter. These results present a complete theoretical film thickness parameter solution for elliptical constants in the four lubrication regimes. The results are particularly useful in initial investigations of many practical lubrication problems involving elliptical conjunctions.

Metal-Insulator crossover in SrVO3 thin film

NASA Astrophysics Data System (ADS)

Wang, Gaomin; Wang, Zhen; Saghayezhian, Mohammad; Chen, Chen; Chen, Lina; Guo, Hangwen; Zhu, Yimei; Zhang, Jiandi

Paramagnetic metallic oxide SrVO3 (SVO) represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover due to its simple structure and itinerancy. Here SrVO3 thin films with different thicknesses were obtained through the layer-by-layer growth by laser Molecular Beam Epitaxy on SrTiO3 (001) surface. Ultraviolet Photoemission Spectroscopy and Scanning Tunneling Spectroscopy measurements confirm a MIT at the thickness of 3 unit cell, while atomically resolved Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy analysis reveal the depletion of Sr, change of V-valence and expansion of the out-of-plane lattice constant in the first three unit cell above the interface, thus different from the rest of the films. The existence of significant amount of oxygen vacancies is proposed, which is also supported by X-ray Photoelectron Spectroscopy, therefore providing a possible explanation of MIT. This work is primarily supported by U.S. DOE under Grant No. DOE DE-SC0002136. G.W. was supported by U.S. NSF under Grant No. DMR 16088865.

Novel Ballistic Processing of Sn-0.7Cu Thick Films

NASA Astrophysics Data System (ADS)

Cavero, D.; Stewart, K.; Morsi, K.

2017-01-01

The present paper discusses a novel process (Ballistic Processing) for the ultra-rapid processing of textured and un-textured thick and potentially thin films. The effect of processing velocity (14.6 to 36.1 m/s) on the developed external structure and internal microstructure of Sn-0.7Cu thick film is discussed. Film thicknesses ranging from 6.08 to 12.79 μm were produced and characterized by two-dimensional hypoeutectic microstructures. Both film thickness and dendrite arm spacing decreased with an increase in processing velocity.

Ellipsometric Measurement of Bacterial Films at Metal-Electrolyte Interfaces

PubMed Central

Busalmen, J. P.; de Sánchez, S. R.; Schiffrin, D. J.

1998-01-01

Ellipsometric measurements were used to monitor the formation of a bacterial cell film on polarized metal surfaces (Al-brass and Ti). Under cathodic polarization bacterial attachment was measured from changes in the ellipsometric angles. These were fitted to an effective medium model for a nonabsorbing bacterial film with an effective refractive index (nf) of 1.38 and a thickness (df) of 160 ± 10 nm. From the optical measurements a surface coverage of 17% was estimated, in agreement with direct microscopic observations. The influence of bacteria on the formation of oxide films was monitored by ellipsometry following the film growth in situ. A strong inhibition of metal oxide film formation was observed, which was assigned to the decrease in oxygen concentration due to the presence of bacteria. It is shown that the irreversible adhesion of bacteria to the surface can be monitored ellipsometrically. Electrophoretic mobility is proposed as one of the factors determining bacterial attachment. The high sensitivity of ellipsometry and its usefulness for the determination of growth of interfacial bacterial films is demonstrated. PMID:9758786

Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of ultrathin block copolymer films.

PubMed

Huang, Changchun; Wen, Gangyao; Li, Jingdan; Wu, Tao; Wang, Lina; Xue, Feifei; Li, Hongfei; Shi, Tongfei

2016-09-15

Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of spin-coated polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films (<20nm thick) were mainly investigated by atomic force microscopy. Surface chemical analysis of the ultrathin films annealed for different times were performed using X-ray photoelectron spectroscopy and contact angle measurement. With the annealing of acetone vapor, dewetting of the films with different thicknesses occur via the spinodal dewetting and the nucleation and growth mechanisms, respectively. The PS-b-PMMA films rupture into droplets which first coalesce into large ones to reduce the surface free energy. Then the large droplets rupture into small ones to increase the contact area between PMMA blocks and acetone molecules resulting from ultimate migration of PMMA blocks to droplet surface, which is a novel dewetting process observed in spin-coated films for the first time. Copyright © 2016 Elsevier Inc. All rights reserved.

Thickness-controlled direct growth of nanographene and nanographite film on non-catalytic substrates

NASA Astrophysics Data System (ADS)

Du, Lei; Yang, Liu; Hu, Zhiting; Zhang, Jiazhen; Huang, Chunlai; Sun, Liaoxin; Wang, Lin; Wei, Dacheng; Chen, Gang; Lu, Wei

2018-05-01

Metal-catalyzed chemical vapor deposition (CVD) has been broadly employed for large-scale production of high-quality graphene. However, a following transfer process to targeted substrates is needed, which is incompatible with current silicon technology. We here report a new CVD approach to form nanographene and nanographite films with accurate thickness control directly on non-catalytic substrates such as silicon dioxide and quartz at 800 °C. The growth time is as short as a few seconds. The approach includes using 9-bis(diethylamino)silylanthracene as the carbon source and an atomic layer deposition (ALD) controlling system. The structure of the formed nanographene and nanographite films were characterized using atomic force microscopy, high resolution transmission electron microscopy, Raman scattering, and x-ray photoemission spectroscopy. The nanographite film exhibits a transmittance higher than 80% at 550 nm and a sheet electrical resistance of 2000 ohms per square at room temperature. A negative temperature-dependence of the resistance of the nanographite film is also observed. Moreover, the thickness of the films can be precisely controlled via the deposition cycles using an ALD system, which promotes great application potential for optoelectronic and thermoelectronic-devices.

Thickness-controlled direct growth of nanographene and nanographite film on non-catalytic substrates.

PubMed

Du, Lei; Yang, Liu; Hu, Zhiting; Zhang, Jiazhen; Huang, Chunlai; Sun, Liaoxin; Wang, Lin; Wei, Dacheng; Chen, Gang; Lu, Wei

2018-05-25

Metal-catalyzed chemical vapor deposition (CVD) has been broadly employed for large-scale production of high-quality graphene. However, a following transfer process to targeted substrates is needed, which is incompatible with current silicon technology. We here report a new CVD approach to form nanographene and nanographite films with accurate thickness control directly on non-catalytic substrates such as silicon dioxide and quartz at 800 °C. The growth time is as short as a few seconds. The approach includes using 9-bis(diethylamino)silylanthracene as the carbon source and an atomic layer deposition (ALD) controlling system. The structure of the formed nanographene and nanographite films were characterized using atomic force microscopy, high resolution transmission electron microscopy, Raman scattering, and x-ray photoemission spectroscopy. The nanographite film exhibits a transmittance higher than 80% at 550 nm and a sheet electrical resistance of 2000 ohms per square at room temperature. A negative temperature-dependence of the resistance of the nanographite film is also observed. Moreover, the thickness of the films can be precisely controlled via the deposition cycles using an ALD system, which promotes great application potential for optoelectronic and thermoelectronic-devices.

Preventing bacterial growth on implanted device with an interfacial metallic film and penetrating X-rays.

PubMed

An, Jincui; Sun, An; Qiao, Yong; Zhang, Peipei; Su, Ming

2015-02-01

Device-related infections have been a big problem for a long time. This paper describes a new method to inhibit bacterial growth on implanted device with tissue-penetrating X-ray radiation, where a thin metallic film deposited on the device is used as a radio-sensitizing film for bacterial inhibition. At a given dose of X-ray, the bacterial viability decreases as the thickness of metal film (bismuth) increases. The bacterial viability decreases with X-ray dose increases. At X-ray dose of 2.5 Gy, 98% of bacteria on 10 nm thick bismuth film are killed; while it is only 25% of bacteria are killed on the bare petri dish. The same dose of X-ray kills 8% fibroblast cells that are within a short distance from bismuth film (4 mm). These results suggest that penetrating X-rays can kill bacteria on bismuth thin film deposited on surface of implant device efficiently.

Microscopic image processing systems for measuring nonuniform film thickness profiles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, A.H.; Plawsky, J.L.; DasGupta, S.

1994-01-01

In very thin liquid films. transport processes are controlled by the temperature and the interfacial intermolecular force field which is a function of the film thickness profile and interfacial properties. The film thickness profile and interfacial properties can be measured most efficiently using a microscopic image processing system. IPS, to record the intensity pattern of the reflected light from the film. There are two types of IPS: an image analyzing interferometer (IAI) and/or an image scanning ellipsometer (ISE). The ISE is a novel technique to measure the two dimensional thickness profile of a nonuniform, thin film, from 1 nm upmore » to several {mu}m, in a steady state as well as in a transient state. It is a full field imaging technique which can study every point on the surface simultaneously with high spatial resolution and thickness sensitivity, i.e., it can measure and map the 2-D film thickness profile. Using the ISE, the transient thickness profile of a draining thin liquid film was measured and modeled. The interfacial conditions were determined in situ by measuring the Hamaker constant. The ISE and IAI systems are compared.« less

New precursors and chemistry for the growth of transition metal films by atomic layer deposition

NASA Astrophysics Data System (ADS)

Knisley, Thomas Joseph

The advancing complexity of advanced microelectronic devices is placing rigorous demands on currently used PVD and CVD deposition techniques. The ALD deposition method is proposed to meet the film thickness and conformality constraints needed by the semiconductor industry in future manufacturing processes. Unfortunately, there is a limited number of chemical precursors available that have high thermal stability, reactivity, and vapor pressure suitable for ALD film growth to occur. These properties collectively contribute to the lack of suitable transition metal precursors available for use in ALD. In this thesis, we report the discovery of a series of novel transition metal diazadienate precursors that promising properties deemed suitable for ALD. The volatility and thermal stability of the new transition metal diazadienyl compounds were studied by preparative sublimation and capillary tube melting point/decomposition experiments. Thermogravimetric analyses (TGA) demonstrate precursor residues of less than 4% at 500 °C. In addition, sublimation data, melting points, and decomposition temperatures for all complexes are presented. The manganese diazadienyl complex has the highest decomposition temperature of the series of complexes produced (325 °C). During preparative sublimations, the product recoveries of all transition metal diazadienyl complexes were greater than 92.0% with nonvolatile residues of less than 7.0%. This is an excellent indication that these complexes may be suitable candidates as metal precursors for ALD. Nickel nitride (NixN) films have been studied as an intermediate material for the formation of both nickel metal and nickel silicide using chemical vapor deposition. Herein, we describe the ALD growth of nickel nitride thin films from bis(1,4-di-tert-butyl-1,3-diazabutadiene) nickel(II) (Ni(tBu2DAD)2) and 1,1-dimethylhydrazine. An ALD window for the deposition of nickel nitride films on 500 nm thermal SiO2 substrates was observed between 225

High-throughput measurement of polymer film thickness using optical dyes

NASA Astrophysics Data System (ADS)

Grunlan, Jaime C.; Mehrabi, Ali R.; Ly, Tien

2005-01-01

Optical dyes were added to polymer solutions in an effort to create a technique for high-throughput screening of dry polymer film thickness. Arrays of polystyrene films, cast from a toluene solution, containing methyl red or solvent green were used to demonstrate the feasibility of this technique. Measurements of the peak visible absorbance of each film were converted to thickness using the Beer-Lambert relationship. These absorbance-based thickness calculations agreed within 10% of thickness measured using a micrometer for polystyrene films that were 10-50 µm. At these thicknesses it is believed that the absorbance values are actually more accurate. At least for this solvent-based system, thickness was shown to be accurately measured in a high-throughput manner that could potentially be applied to other equivalent systems. Similar water-based films made with poly(sodium 4-styrenesulfonate) dyed with malachite green oxalate or congo red did not show the same level of agreement with the micrometer measurements. Extensive phase separation between polymer and dye resulted in inflated absorbance values and calculated thickness that was often more than 25% greater than that measured with the micrometer. Only at thicknesses below 15 µm could reasonable accuracy be achieved for the water-based films.

Measuring Thicknesses of Wastewater Films

NASA Technical Reports Server (NTRS)

Schubert, F. H.; Davenport, R. J.

1987-01-01

Sensor determines when thickness of film of electrically conductive wastewater on rotating evaporator drum exceeds preset value. Sensor simple electrical probe that makes contact with liquid surface. Made of materials resistant to chemicals in liquid. Mounted on shaft in rotating cylinder, liquid-thickness sensor extends toward cylinder wall so tip almost touches. Sensor body accommodates probe measuring temperature of evaporated water in cylinder.

Metal oxide films on metal

DOEpatents

Wu, Xin D.; Tiwari, Prabhat

1995-01-01

A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

Resistance Spot Welding of AA5052 Sheet Metal of Dissimilar Thickness

NASA Astrophysics Data System (ADS)

Mat Din, N. A.; Zuhailawati, H.; Anasyida, A. S.

2016-02-01

Resistance spot welding of dissimilar thickness of AA5052 aluminum alloy was performed in order to investigate the effect of metal thickness on the weldment strength. Resistance spot welding was done using a spot welder machine available in Coraza Systems Sdn Bhd using a hemispherical of chromium copper electrode tip with radius of 6.00 mm under 14 kA of current and 0.02 bar of pressure for all thickness combinations. Lap joint configuration was produced between 2.0 mm thick sheet and 1.2 - 3.2 mm thick sheet, respectively. Microstructure of joint showed asymmetrical nugget shape that was larger on the thicker side indicating larger molten metal volume. Joint 2.0 mm x 3.2 mm sheets has the lowest hardness in both transverse direction and through thickness direction because less heat left in the weld nugget. The microstructure shows that this joint has coarse grains of HAZ. As thickness of sheet metal increased, the failure load of the joints increased. However, there was no linear correlation established between joint strength and metal thickness due to different shape of fusion zone in dissimilar thickness sheet metal.

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

PubMed

Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

Elastohydrodynamic film thickness model for heavily loaded contacts

NASA Technical Reports Server (NTRS)

Loewenthal, S. H.; Parker, R. J.; Zaretsky, E. V.

1973-01-01

An empirical elastohydrodynamic (EHD) film thickness formula for predicting the minimum film thickness occurring within heavily loaded contacts (maximum Hertz stresses above 150,000 psi) was developed. The formula was based upon X-ray film thickness measurements made with synthetic paraffinic, fluorocarbon, Type II ester and polyphenyl ether fluids covering a wide range of test conditions. Comparisons were made between predictions from an isothermal EHD theory and the test data. The deduced relationship was found to adequately reflect the high-load dependence exhibited by the measured data. The effects of contact geometry, material and lubricant properties on the form of the empirical model are also discussed.

Metal copper films deposited on cenosphere particles by magnetron sputtering method

NASA Astrophysics Data System (ADS)

Yu, Xiaozheng; Xu, Zheng; Shen, Zhigang

2007-05-01

Metal copper films with thicknesses from several nanometres to several micrometres were deposited on the surface of cenosphere particles by the magnetron sputtering method under different working conditions. An ultrasonic vibrating generator equipped with a conventional magnetron sputtering apparatus was used to prevent the cenosphere substrates from accumulating during film growth. The surface morphology, the chemical composition, the average grain size and the crystallization of cenosphere particles were characterized by field emission scanning electron microscopy (FE-SEM), inductively coupled plasma-atom emission spectrometer, x-ray photoelectron spectroscopy and x-ray diffraction (XRD) analysis, respectively, before and after the plating process. The results indicate that the copper films were successfully deposited on cenosphere particles. It was found from the FE-SEM results that the films were well compacted and highly uniform in thickness. The XRD results show that the copper film coated on cenospheres has a face centred cubic structure and the crystallization of the film sample increases with increasing sputtering power.

Epitaxially influenced boundary layer model for size effect in thin metallic films

NASA Astrophysics Data System (ADS)

Bažant, Zdeněk P.; Guo, Zaoyang; Espinosa, Horacio D.; Zhu, Yong; Peng, Bei

2005-04-01

It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films.

Computational method for determining n and k for a thin film from the measured reflectance, transmittance, and film thickness.

PubMed

Bennett, J M; Booty, M J

1966-01-01

A computational method of determining n and k for an evaporated film from the measured reflectance, transmittance, and film thickness has been programmed for an IBM 7094 computer. The method consists of modifications to the NOTS multilayer film program. The basic program computes normal incidence reflectance, transmittance, phase change on reflection, and other parameters from the optical constants and thicknesses of all materials. In the modification, n and k for the film are varied in a prescribed manner, and the computer picks from among these values one n and one k which yield reflectance and transmittance values almost equalling the measured values. Results are given for films of silicon and aluminum.

Self-Poling of BiFeO3 Thick Films.

PubMed

Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

2016-08-03

Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

PubMed

Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

2011-10-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films

DOE PAGES

Keech, Ryan; Morandi, Carl; Wallace, Margeaux; ...

2017-04-11

Continued reduction in length scales associated with many ferroelectric film-based technologies is contingent on retaining the functional properties as the film thickness is reduced. Epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) thin films were studied over the thickness range of 100-350 nm for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO 3, while polycrystalline films with {001}-Lotgering factors >0.96 were grown on Pt/TiO 2/SiO 2/Si substrates via chemical solution deposition. Both film types exhibited similar relative permittivities of ~300 at highmore » fields at all measured thicknesses with highly crystalline electrode/dielectric interfaces. These results, with the DC-biased and temperature dependent dielectric characterization, suggest irreversible domain wall mobility is the major contributor to the overall dielectric response and its thickness dependence. In epitaxial films, the irreversible Rayleigh coefficients reduced 85% upon decreasing thickness from 350 to 100 nm. The temperature at which a peak in the relative permittivity is observed was the only measured small signal quantity which was more thickness dependent in polycrystalline than epitaxial films. This is attributed to the relaxor nature present in the films, potentially stabilized by defect concentrations, and/or chemical inhomogeneity. Finally, the effective interfacial layers are found to contribute to the measured thickness dependence in the longitudinal piezoelectric coefficient.« less

Preparation and characterization of thick-film Ni/MH battery.

PubMed

Do, Jing-Shan; Yu, Sen-Hao; Cheng, Suh-Fen

2004-07-30

Using the porous polypropylene (PP) films sputtered with gold and the Ni as current collectors, the electroactive materials (Ni(OH)2 and metal hydride (MH)) of positive and negative electrodes were prepared on the current collector using thick-film technology. Two types of cell configurations were prepared and the characteristics of these batteries were compared. The cycle number for the formation of batteries based on the porous PP film was found to be 2, which was significantly less than that of batteries based on the ceramic substrates. Using the porous PP film as substrate, the number of cycles for the formation of battery increased from 2 to 5 with the increase of the charge/discharge rate from 0.1C/0.025C to 2.0C/0.5C. The silver oxides dendrites formed by the oxidation of silver paste used to adhere the current collectors and the conducting wires in the charge/discharge process caused a short contact between the positive and negative electrodes, which then caused the battery failure. The cycle life of the battery based on the porous PP film was found to be greater than 400 when the charge/discharge rate was 2.0C/0.5C.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

NASA Astrophysics Data System (ADS)

Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

2018-04-01

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy tomore » a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.« less

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

DOE PAGES

Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.; ...

2018-02-22

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy tomore » a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.« less

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness.

PubMed

Ievlev, Anton V; Chyasnavichyus, Marius; Leonard, Donovan N; Agar, Joshua C; Velarde, Gabriel A; Martin, Lane W; Kalinin, Sergei V; Maksymovych, Petro; Ovchinnikova, Olga S

2018-04-02

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films

NASA Astrophysics Data System (ADS)

Sakuragi, S.; Sakai, T.; Urata, S.; Aihara, S.; Shinto, A.; Kageshima, H.; Sawada, M.; Namatame, H.; Taniguchi, M.; Sato, T.

2014-08-01

We report the appearance of ferromagnetism in thin films of Pd(100), which depends on film thickness in the range of 3-5 nm on SrTiO3(100) substrates. X-ray magnetic circular dichroism measurement shows the intrinsic nature of ferromagnetism in Pd(100) films. The spontaneous magnetization in Pd(100) films, corresponding to is 0.61μB/atom, is comparable to Ni, and it changes in an oscillatory manner depending on film thickness, where the period quantitatively agrees with the theoretical prediction based on the two-dimensional quantum well in the film. This indicates that the discrete electronic states in the quantum well shift to Fermi energy to satisfy the condition for ferromagnetism (Stoner criterion) at a specific film thickness.

Block Copolymer-Templated Approach to Nanopatterned Metal-Organic Framework Films.

PubMed

Zhou, Meimei; Wu, Yi-Nan; Wu, Baozhen; Yin, Xianpeng; Gao, Ning; Li, Fengting; Li, Guangtao

2017-08-17

The fabrication of patterned metal-organic framework (MOF) films with precisely controlled nanoscale resolution has been a fundamental challenge in nanoscience and nanotechnology. In this study, nanopatterned MOF films were fabricated using a layer-by-layer (LBL) growth method on functional templates (such as a bicontinuous nanoporous membrane or a structure with highly long-range-ordered nanoscopic channels parallel to the underlying substrate) generated by the microphase separation of polystyrene-b-poly(2-vinylpyridine) (PS-b-P2VP) block copolymers. HKUST-1 can be directly deposited on the templates without any chemical modification because the pyridine groups in P2VP interact with metal ions via metal-BCP complexes. As a result, nanopatterned HKUST-1 films with feature sizes below 50 nm and controllable thicknesses can be fabricated by controlling the number of LBL growth cycles. The proposed fabrication method further extends the applications of MOFs in various fields. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thin Metallic Films From Solvated Metal Atoms

NASA Astrophysics Data System (ADS)

Trivino, Galo C.; Klabunde, Kenneth J.; Dale, Brock

1988-02-01

Metals were evaporated under vacuum and the metal atoms solvated by excess organic solvents at low temperature. Upon warming stable colloidal metal particles were formed by controlled metal atom clustering. The particles were stabilized toward flocculation by solvation and electrostatic effects. Upon solvent removal the colloidal particles grew to form thin films that were metallic in appearance, but showed higher resistivities than pure metallic films. Gold, palladium, platinium, and especially indium are discussed.

Microfluidic devices with thick-film electrochemical detection

DOEpatents

Wang, Joseph; Tian, Baomin; Sahlin, Eskil

2005-04-12

An apparatus for conducting a microfluidic process and analysis, including at least one elongated microfluidic channel, fluidic transport means for transport of fluids through the microfluidic channel, and at least one thick-film electrode in fluidic connection with the outlet end of the microfluidic channel. The present invention includes an integrated on-chip combination reaction, separation and thick-film electrochemical detection microsystem, for use in detection of a wide range of analytes, and methods for the use thereof.

Metal nanostructures with complex surface morphology: The case of supported lumpy Pd and Pt nanoparticles produced by laser processing of metal films

NASA Astrophysics Data System (ADS)

Ruffino, F.; Maugeri, P.; Cacciato, G.; Zimbone, M.; Grimaldi, M. G.

2016-09-01

In this work we report on the formation of lumpy Pd and Pt nanoparticles on fluorine-doped tin oxide/glass (FTO/glass) substrate by a laser-based approach. In general, complex-surface morphology metal nanoparticles can be used in several technological applications exploiting the peculiarities of their physical properties as modulated by nanoscale morphology. For example plasmonic metal nanoparticles presenting a lumpy morphology (i.e. larger particles coated on the surface by smaller particles) can be used in plasmonic solar cell devices providing broadband scattering enhancement over the smooth nanoparticles leading, so, to the increase of the device efficiency. However, the use of plasmonic lumpy nanoparticles remains largely unexplored due to the lack of simply, versatile, low-cost and high-throughput methods for the controllable production of such nanostructures. Starting from these considerations, we report on the observation that nanoscale-thick Pd and Pt films (17.6 and 27.9 nm, 12.1 and 19.5 nm, respectively) deposited on FTO/glass surface irradiated by nanosecond pulsed laser at fluences E in the 0.5-1.5 J/cm2 range, produce Pd and Pt lumpy nanoparticles on the FTO surface. In addition, using scanning electron microscopy analyses, we report on the observation that starting from each metal film of fixed thickness h, the fraction F of lumpy nanoparticles increases with the laser fluence E and saturates at the higher fluences. For each fixed fluence, F was found higher starting from the Pt films (at each starting film thickness h) with respect to the Pd films. For each fixed metal and fluence, F was found to be higher decreasing the starting thickness of the deposited film. To explain the formation of the lumpy Pd and Pt nanoparticles and the behavior of F as a function of E and h both for Pd and Pt, the thermodynamic behavior of the Pd and Pt films and nanoparticles due to the interaction with the nanosecond laser is discussed. In particular, the

Transparent binary-thickness coatings on metal substrates that produce binary patterns of orthogonal elliptical polarization states in reflected light

NASA Astrophysics Data System (ADS)

Azzam, Rasheed M. A.; Angel, Wade W.

1992-12-01

A reflective division-of-wavefront polarizing beam splitter is described that uses a dual- thickness transparent thin-film coating on a metal substrate. A previous design that used a partially clad substrate at the principal angle of the metal [Azzam, JOSA A 5, 1576 (1988)] is replaced by a more general one in which the substrate is coated throughout and the film thickness alternates between two non-zero levels. The incident linear polarization azimuth is chosen near, but not restricted to, 45 degree(s) (measured from the plane of incidence), and the angle of incidence may be selected over a range of values. The design procedure, which uses the two-dimensional Newton-Raphson method, is applied to the SiO2-Au film- substrate system at 633 nm wavelength, as an example, and the characteristics of the various possible coatings are presented.

Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors

NASA Astrophysics Data System (ADS)

Hourdakis, E.; Koutsoureli, M.; Papaioannou, G.; Nassiopoulou, A. G.

2018-06-01

Barrier-type anodic alumina thin films are interesting for use in high capacitance density metal-insulator-metal capacitors due to their excellent dielectric properties at small thickness. This thickness is easily controlled by the anodization voltage. In previous papers we studied the main parameters of interest of the Al/barrier-type anodic alumina/Al structure for use in RF applications and showed the great potential of barrier-type anodic alumina in this respect. In this paper, we investigated in detail charging/discharging processes and leakage current of the above dielectric material. Two different sets of metal-insulator-metal capacitors were studied, namely, with the top Al electrode being either e-gun deposited or sputtered. The dielectric constant of the barrier-type anodic alumina was found at 9.3. Low leakage current was observed in all samples studied. Furthermore, depending on the film thickness, field emission following the Fowler-Nordheim mechanism was observed above an applied electric field. Charging of the anodic dielectric was observed, occurring in the bulk of the anodic layer. The stored charge was of the order of few μC/cm2 and the calculated trap density ˜2 × 1018 states/cm3, the most probable origin of charge traps being, in our opinion, positive electrolyte ions trapped in the dielectric during anodization. We do not think that oxygen vacancies play an important role, since their existence would have a more important impact on the leakage current characteristics, such as resistive memory effects or significant changes during annealing, which were not observed. Finally, discharging characteristic times as high as 5 × 109 s were measured.

A wrinkling-based method for investigating glassy polymer film relaxation as a function of film thickness and temperature.

PubMed

Chung, Jun Young; Douglas, Jack F; Stafford, Christopher M

2017-10-21

We investigate the relaxation dynamics of thin polymer films at temperatures below the bulk glass transition T g by first compressing polystyrene films supported on a polydimethylsiloxane substrate to create wrinkling patterns and then observing the slow relaxation of the wrinkled films back to their final equilibrium flat state by small angle light scattering. As with recent relaxation measurements on thin glassy films reported by Fakhraai and co-workers, we find the relaxation time of our wrinkled films to be strongly dependent on film thickness below an onset thickness on the order of 100 nm. By varying the temperature between room temperature and T g (≈100 °C), we find that the relaxation time follows an Arrhenius-type temperature dependence to a good approximation at all film thicknesses investigated, where both the activation energy and the relaxation time pre-factor depend appreciably on film thickness. The wrinkling relaxation curves tend to cross at a common temperature somewhat below T g , indicating an entropy-enthalpy compensation relation between the activation free energy parameters. This compensation effect has also been observed recently in simulated supported polymer films in the high temperature Arrhenius relaxation regime rather than the glassy state. In addition, we find that the film stress relaxation function, as well as the height of the wrinkle ridges, follows a stretched exponential time dependence and the short-time effective Young's modulus derived from our modeling decreases sigmoidally with increasing temperature-both characteristic features of glassy materials. The relatively facile nature of the wrinkling-based measurements in comparison to other film relaxation measurements makes our method attractive for practical materials development, as well as fundamental studies of glass formation.

A wrinkling-based method for investigating glassy polymer film relaxation as a function of film thickness and temperature

NASA Astrophysics Data System (ADS)

Chung, Jun Young; Douglas, Jack F.; Stafford, Christopher M.

2017-10-01

We investigate the relaxation dynamics of thin polymer films at temperatures below the bulk glass transition Tg by first compressing polystyrene films supported on a polydimethylsiloxane substrate to create wrinkling patterns and then observing the slow relaxation of the wrinkled films back to their final equilibrium flat state by small angle light scattering. As with recent relaxation measurements on thin glassy films reported by Fakhraai and co-workers, we find the relaxation time of our wrinkled films to be strongly dependent on film thickness below an onset thickness on the order of 100 nm. By varying the temperature between room temperature and Tg (≈100 °C), we find that the relaxation time follows an Arrhenius-type temperature dependence to a good approximation at all film thicknesses investigated, where both the activation energy and the relaxation time pre-factor depend appreciably on film thickness. The wrinkling relaxation curves tend to cross at a common temperature somewhat below Tg, indicating an entropy-enthalpy compensation relation between the activation free energy parameters. This compensation effect has also been observed recently in simulated supported polymer films in the high temperature Arrhenius relaxation regime rather than the glassy state. In addition, we find that the film stress relaxation function, as well as the height of the wrinkle ridges, follows a stretched exponential time dependence and the short-time effective Young's modulus derived from our modeling decreases sigmoidally with increasing temperature—both characteristic features of glassy materials. The relatively facile nature of the wrinkling-based measurements in comparison to other film relaxation measurements makes our method attractive for practical materials development, as well as fundamental studies of glass formation.

A low-cost photovoltaic cell process based on thick film techniques

NASA Technical Reports Server (NTRS)

Mardesich, N.; Pepe, A.; Bunyan, S.; Edwards, B.; Olson, C.

1980-01-01

The low-cost, easily automated processing for solar cell fabrication being developed at Spectrolab for the DOE LSA program is described. These processes include plasma-etching, spray-on diffusion sources and antireflective coating, thick film metallization, aluminum back contacts, laser scribing and ultrasonic soldering. The process sequence has been shown to produce solar cells having 15% conversion efficiency at AM1 which meet the cell fabrication budget required for the DOE 1986 cost goal of $0.70 per peak watt in 1980.

Thin Metallic Films from Solvated Metal Atoms.

DTIC Science & Technology

1987-07-14

platinium , and especially indium are discussed. N, ; ,, -- !, : N) By Dist , , . N S f1 -- ~~r, 821-19 C[ Thin metallic films from solvated metal atoms...metallic films. Cold, palladium, platinium , and especially indium are discussed. 1- INTRQDUCTION In the field of chemistry an active and broad area of

Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

NASA Astrophysics Data System (ADS)

Palneedi, Haribabu; Maurya, Deepam; Kim, Gi-Yeop; Priya, Shashank; Kang, Suk-Joong L.; Kim, Kwang-Ho; Choi, Si-Young; Ryu, Jungho

2015-07-01

A highly dense, 4 μm-thick Pb(Zr,Ti)O3 (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

Extraordinary optical transmission in nanopatterned ultrathin metal films without holes

DOE PAGES

Peer, Akshit; Biswas, Rana

2016-02-01

In this study, we experimentally and theoretically demonstrate that a continuous gold film on a periodically textured substrate exhibits extraordinary optical transmission, even though no holes were etched in the film. Our film synthesis started by nanoimprinting a periodic array of nanocups with a period of ~750 nm on a polystyrene film over a glass substrate. A thin non-conformal gold film was sputter-deposited on the polystyrene by angle-directed deposition. The gold film was continuous with spatial thickness variation, the film being thinnest at the bottom of the nanocup. Measurements revealed an extraordinary transmission peak at a wavelength just smaller thanmore » the period, with an enhancement of ~2.5 compared to the classically expected value. Scattering matrix simulations model well the transmission and reflectance measurements when an ultrathin gold layer (~5 nm), smaller than the skin depth is retained at the bottom of the nanocups. Electric field intensities are enhanced by >100 within the nanocup, and ~40 in the ultrathin gold layer causing transmission through it. We show a wavelength red-shift of ~30 nm in the extraordinary transmission peak when the nanocups are coated with a thin film of a few nanometers, which can be utilized for biosensing. The continuous corrugated metal films are far simpler structures to observe extraordinary transmission, circumventing the difficult process of etching the metal film. Such continuous metal films with ultrathin regions are simple platforms for non-linear optics, plasmonics, and biological and chemical sensing.« less

Morphology and mechanisms of picosecond ablation of metal films on fused silica substrates

NASA Astrophysics Data System (ADS)

Bass, Isaac L.; Negres, Raluca A.; Stanion, Ken; Guss, Gabe; Keller, Wesley J.; Matthews, Manyalibo J.; Rubenchik, Alexander M.; Yoo, Jae Hyuck; Bude, Jeffrey D.

2016-12-01

The ablation of magnetron sputtered metal films on fused silica substrates by a 1053 nm, picosecond class laser was studied as part of a demonstration of its use for in-situ characterization of the laser spot under conditions commonly used at the sample plane for laser machining and damage studies. Film thicknesses were 60 and 120 nm. Depth profiles and SEM images of the ablation sites revealed several striking and unexpected features distinct from those typically observed for ablation of bulk metals. Very sharp thresholds were observed for both partial and complete ablation of the films. Partial film ablation was largely independent of laser fluence with a surface smoothness comparable to that of the unablated surface. Clear evidence of material displacement was seen at the boundary for complete film ablation. These features were common to a number of different metal films including Inconel on commercial neutral density filters, stainless steel, and aluminum. We will present data showing the morphology of the ablation sites on these films as well as a model of the possible physical mechanisms producing the unique features observed.

Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

NASA Astrophysics Data System (ADS)

Park, Sun-Gyu; Kim, Eunseong

2013-03-01

Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

Effects of high temperature and film thicknesses on the texture evolution in Ag thin films

NASA Astrophysics Data System (ADS)

Eshaghi, F.; Zolanvari, A.

2017-04-01

In situ high-temperature X-ray diffraction techniques were used to study the effect of high temperatures (up to 600°C) on the texture evolution in silver thin films. Ag thin films with different thicknesses of 40, 80, 120 and 160nm were sputtered on the Si(100) substrates at room temperature. Then, microstructure of thin films was determined using X-ray diffraction. To investigate the influence of temperature on the texture development in the Ag thin films with different thicknesses, (111), (200) and (220) pole figures were evaluated and orientation distribution functions were calculated. Minimizing the total energy of the system which is affected by competition between surface and elastic strain energy was a key factor in the as-deposited and post annealed thin films. Since sputtering depositions was performed at room temperature and at the same thermodynamic conditions, the competition growth caused the formation of the {122} < uvw \\rangle weak fiber texture in as-deposited Ag thin films. It was significantly observed that the post annealed Ag thin films showed {111} < uvw \\rangle orientations as their preferred orientations, but their preferred fiber texture varied with the thickness of thin films. Increasing thin film thickness from 40nm to 160nm led to decreasing the intensity of the {111} < uvw \\rangle fiber texture.

Biocompatibility evaluation of sputtered zirconium-based thin film metallic glass-coated steels.

PubMed

Subramanian, Balasubramanian; Maruthamuthu, Sundaram; Rajan, Senthilperumal Thanka

2015-01-01

Thin film metallic glasses comprised of Zr48Cu36Al8Ag8 (at.%) of approximately 1.5 μm and 3 μm in thickness were prepared using magnetron sputtering onto medical grade 316L stainless steel. Their structural and mechanical properties, in vitro corrosion, and antimicrobial activity were analyzed. The amorphous thin film metallic glasses consisted of a single glassy phase, with an absence of any detectable peaks corresponding to crystalline phases. Elemental composition close to the target alloy was noted from EDAX analysis of the thin film. The surface morphology of the film showed a smooth surface on scanning electron microscopy and atomic force microscopy. In vitro electrochemical corrosion studies indicated that the zirconium-based metallic glass could withstand body fluid, showing superior resistance to corrosion and electrochemical stability. Interactions between the coated surface and bacteria were investigated by agar diffusion, solution suspension, and wet interfacial contact methods. The results indicated a clear zone of inhibition against the growth of microorganisms such as Escherichia coli and Staphylococcus aureus, confirming the antimicrobial activity of the thin film metallic glasses. Cytotoxicity studies using L929 fibroblast cells showed these coatings to be noncytotoxic in nature.

Biocompatibility evaluation of sputtered zirconium-based thin film metallic glass-coated steels

PubMed Central

Subramanian, Balasubramanian; Maruthamuthu, Sundaram; Rajan, Senthilperumal Thanka

2015-01-01

Thin film metallic glasses comprised of Zr48Cu36Al8Ag8 (at.%) of approximately 1.5 μm and 3 μm in thickness were prepared using magnetron sputtering onto medical grade 316L stainless steel. Their structural and mechanical properties, in vitro corrosion, and antimicrobial activity were analyzed. The amorphous thin film metallic glasses consisted of a single glassy phase, with an absence of any detectable peaks corresponding to crystalline phases. Elemental composition close to the target alloy was noted from EDAX analysis of the thin film. The surface morphology of the film showed a smooth surface on scanning electron microscopy and atomic force microscopy. In vitro electrochemical corrosion studies indicated that the zirconium-based metallic glass could withstand body fluid, showing superior resistance to corrosion and electrochemical stability. Interactions between the coated surface and bacteria were investigated by agar diffusion, solution suspension, and wet interfacial contact methods. The results indicated a clear zone of inhibition against the growth of microorganisms such as Escherichia coli and Staphylococcus aureus, confirming the antimicrobial activity of the thin film metallic glasses. Cytotoxicity studies using L929 fibroblast cells showed these coatings to be noncytotoxic in nature. PMID:26491304

Nanometer-Thick Yttrium Iron Garnet Film Development and Spintronics-Related Study

NASA Astrophysics Data System (ADS)

Chang, Houchen

In the last decade, there has been a considerable interest in using yttrium iron garnet (Y3Fe5O12, YIG) materials for magnetic insulator-based spintronics studies. This interest derives from the fact that YIG materials have very low intrinsic damping. The development of YIG-based spintronics demands YIG films that have a thickness in the nanometer (nm) range and at the same time exhibit low damping similar to single-crystal YIG bulk materials. This dissertation reports comprehensive experimental studies on nm-thick YIG films by magnetron sputtering techniques. Optimization of sputtering control parameters and post-deposition annealing processes are discussed in detail. The feasibility of low-damping YIG nm-thick film growth via sputtering is demonstrated. A 22.3-nm-thick YIG film, for example, shows a Gilbert damping constant of less than 1.0 x 10-4. The demonstration is of great technological significance because sputtering is a thin film growth technique most widely used in industry. The spin Seebeck effect (SSE) refers to the generation of spin voltage in a ferromagnet (FM) due to a temperature gradient. The spin voltage can produce a pure spin current into a normal metal (NM) that is in contact with the FM. Various theoretical models have been proposed to interpret the SSE, although a complete understanding of the effect has not been realized yet. In this dissertation the study of the role of damping on the SSE in YIG thin films is conducted for the first time. With the thin film development method mentioned in the last paragraph, a series of YIG thin films showing very similar structural and static magnetic properties but rather different Gilbert damping values were prepared. A Pt capping layer was grown on each YIG film to probe the strength of the SSE. The experimental data show that the YIG films with a smaller intrinsic Gilbert damping shows a stronger SSE. The majority of the previous studies on YIG spintronics utilized YIG films that were grown on single

Ultrafast demagnetisation dependence on film thickness: A TDDFT calculation

NASA Astrophysics Data System (ADS)

Singh, N.; Sharma, S.

2018-04-01

Ferromagnetic materials when subjected to intense laser pulses leads to reduction of their magnetisation on an ultrafast scale. Here, we perform an ab-initio calculation to study the behavior of ultrafast demagnetisation as a function of film thickness for Nickel as compared to the bulk of the material. In thin films surface formation results in amplification of demagnetisation with the percentage of demagnetisation depending upon the film thickness.

Additive-free thick graphene film as an anode material for flexible lithium-ion batteries

NASA Astrophysics Data System (ADS)

Rana, Kuldeep; Kim, Seong Dae; Ahn, Jong-Hyun

2015-04-01

This work demonstrates a simple route to develop mechanically flexible electrodes for Li-ion batteries (LIBs) that are usable as lightweight effective conducting networks for both cathodes and anodes. Removing electrochemically dead elements, such as binders, conducting agents and metallic current collectors, from the battery components will allow remarkable progress in this area. To investigate the feasibility of using thick, additive-free graphene films as anodes for flexible LIBs, we have synthesized and tested thick, additive-free, freestanding graphene films as anodes, first in a coin cell and further in a flexible full cell. As an anode material in a half cell, it showed a discharge capacity of about 350 mA h g-1 and maintained nearly this capacity over 50 cycles at various current rates. This film was also tested as an anode material in a full cell with a LiCoO2 cathode and showed good electrochemical performance. Because the graphene-based flexible film showed good performance in half- and full coin cells, we used this film as a flexible anode for flexible LIBs. No conducting agent or binder was used in the anode side, which helped in realizing the flexible LIBs. Using this, we demonstrate a thin, lightweight and flexible lithium ion battery with good electrochemical performance in both its flat and bent states.This work demonstrates a simple route to develop mechanically flexible electrodes for Li-ion batteries (LIBs) that are usable as lightweight effective conducting networks for both cathodes and anodes. Removing electrochemically dead elements, such as binders, conducting agents and metallic current collectors, from the battery components will allow remarkable progress in this area. To investigate the feasibility of using thick, additive-free graphene films as anodes for flexible LIBs, we have synthesized and tested thick, additive-free, freestanding graphene films as anodes, first in a coin cell and further in a flexible full cell. As an anode

The role of long-range forces in the formation of thin liquid films on metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gyory, J.R.; Muller, R.H.

1987-06-01

White-light multiple beam interference is used to study the drainage of aqueous electrolytes from vertically optically smooth platinum and gold plates. Bulk liquid is in contact with the bottom of the metal plate. For short times following the lowering of the bulk liquid level, the change in the film profile agrees with that expected from viscous drainage. However, at long times, the film profile deviates from that expected and eventually becomes independent of time at a thickness between 0.08 and 0.25 micrometers. These profiles are best represented by a function dependent on the inverse cube root of height. The thicknessmore » of the equilibrium film profiles with increasing electrolyte concentration. A model based on long range van der Waals interactions resulting in a repulsive force between the interfaces of the film is shown to predict the correct profile shape, and for dilute electrolytes, the correct film thickness. This model also predicts increasing film thickness for increasing electrolyte concentration. The strength of this interaction is characterized by the Hamaker constant which can be calculated from the dielectric functions evaluated at imaginary frequencies of the film and substrate. For metals, this function is generated from spectral absorption data, limiting behavior for low and high frequencies, and by use of the Kramers-Kronig transformation. Hamaker constants calculated from the dielectric functions generated in this manner agree well with those derived from film profiles for dilute electrolytes.« less

Thermodynamic limit to photonic-plasmonic light-trapping in thin films on metals

NASA Astrophysics Data System (ADS)

Schiff, E. A.

2011-11-01

We calculate the maximum optical absorptance enhancements in thin semiconductor films on metals due to structures that diffuse light and couple it to surface plasmon polaritons. The calculations can be used to estimate plasmonic effects on light-trapping in solar cells. The calculations are based on the statistical distribution of energy in the electromagnetic modes of the structure, which include surface plasmon polariton modes at the metal interface as well as the trapped waveguide modes in the film. The enhancement has the form 4n2+nλ/h (n - film refractive index, λ - optical wavelength, h - film thickness), which is an increase beyond the non-plasmonic "classical" enhancement 4n2. Larger resonant enhancements occur for wavelengths near the surface plasmon frequency; these add up to 2 mA/cm2 to the photocurrent of a solar cell based on a 500 nm film of crystalline silicon. We also calculated the effects of plasmon dissipation in the metal. Dissipation rates typical of silver reverse the resonant enhancement effect for silicon, but a non-resonant enhancement remains.

Synthesis of metal-organic framework films by pore diffusion method

NASA Astrophysics Data System (ADS)

Murayama, Naohiro; Nishimura, Yuki; Kajiro, Hiroshi; Kishida, Satoru; Kinoshita, Kentaro; Tottori Univ Team; Nippon Steel; Sumitomo Metal Co. Collaboration; Tottori Integrated Frontier Resaerch Center (Tifrec) Collaboration; Tottori University Electronic Display Resaerch Center (Tedrec) Collaboration

Metal-organic frameworks (MOFs) presents high controllability in designing the nano-scale pore, and this enable molecular storages, catalysts, gas sensors, gas separation membranes, and electronic devices for next-generation. Therefore, a simple method for film synthesis of MOFs compared with conventional methods [1] is strongly required. In this paper, we provide pore diffusion method, in which a substrate containing constituent metals of MOF is inserted in solution that includes only linker molecules of MOF. As a result, 2D growth of MOF was effectively enhanced, and the formation of flat and dense MOF films was attained. The growth time, t, dependence of film thickness, d, can be expressed by the relation of d = Aln(t + 1) + B, where A and B are constants. It means that ionized coppers diffuse through the pores of MOFs and the synthesis reaction proceeds at the MOF/solvent interface. We demonstrated the fabrication of a HKUST-1/Cu-TPA hetero structure by synthesizing a Cu-TPA film continuously after the growth of a HKUST-1 film on the CuOx substrate.

Enhanced electron emission from coated metal targets: Effect of surface thickness on performance

NASA Astrophysics Data System (ADS)

Madas, Saibabu; Mishra, S. K.; Upadhyay Kahaly, Mousumi

2018-03-01

In this work, we establish an analytical formalism to address the temperature dependent electron emission from a metallic target with thin coating, operating at a finite temperature. Taking into account three dimensional parabolic energy dispersion for the target (base) material and suitable thickness dependent energy dispersion for the coating layer, Fermi Dirac statistics of electron energy distribution and Fowler's mechanism of the electron emission, we discuss the dependence of the emission flux on the physical properties such as the Fermi level, work function, thickness of the coating material, and operating temperature. Our systematic estimation of how the thickness of coating affects the emission current demonstrates superior emission characteristics for thin coating layer at high temperature (above 1000 K), whereas in low temperature regime, a better response is expected from thicker coating layer. This underlying fundamental behavior appears to be essentially identical for all configurations when work function of the coating layer is lower than that of the bulk target work function. The analysis and predictions could be useful in designing new coated materials with suitable thickness for applications in the field of thin film devices and field emitters.

Fracture Resistance of Lithium Disilicate Ceramics Bonded to Enamel or Dentin Using Different Resin Cement Types and Film Thicknesses.

PubMed

Rojpaibool, Thitithorn; Leevailoj, Chalermpol

2017-02-01

To investigate the influence of cement film thickness, cement type, and substrate (enamel or dentin) on ceramic fracture resistance. One hundred extracted human third molars were polished to obtain 50 enamel and 50 dentin specimens. The specimens were cemented to 1-mm-thick lithium disilicate ceramic plates with different cement film thicknesses (100 and 300 μm) using metal strips as spacers. The cements used were etch-and-rinse (RelyX Ultimate) and self-adhesive (RelyX U200) resin cements. Compressive load was applied on the ceramic plates using a universal testing machine, and fracture loads were recorded in Newtons (N). Statistical analysis was performed by multiple regression (p < 0.05). Representative specimens were evaluated by scanning electron microscopy to control the cement film thickness. The RelyX Ultimate group with a cement thickness of 100 μm cemented to enamel showed the highest mean fracture load (MFL; 1591 ± 172.59 N). The RelyX Ultimate groups MFLs were significantly higher than the corresponding RelyX U200 groups (p < 0.05), and thinner film cement demonstrated a higher MFL than thicker films (p < 0.05). Bonding to dentin resulted in lower MFL than with enamel (p < 0.001). Higher fracture loads were related to thinner cement film thickness and RelyX Ultimate resin cement. Bonding to dentin resulted in lower fracture loads than bonding to enamel. Reduced resin film thickness could reduce lithium disilicate restoration fracture. Etch-and-rinse resin cements are recommended for cementing on either enamel or dentin, compared with self-adhesive resin cement, for improved fracture resistance. © 2015 by the American College of Prosthodontists.

Understanding Metal-Insulator transitions in ultra-thin films of LaNiO3

NASA Astrophysics Data System (ADS)

Ravichandran, Jayakanth; King, Philip D. C.; Schlom, Darrell G.; Shen, Kyle M.; Kim, Philip

2014-03-01

LaNiO3 (LNO) is a bulk paramagnetic metal and a member of the family of RENiO3 Nickelates (RE = Rare Earth Metals), which is on the verge of the metal-insulator transition. Ultra-thin films of LNO has been studied extensively in the past and due to its sensitivity to disorder, the true nature of the metal-insulator transition in these films have been hard to decipher. We grow high quality ultra-thin films of LNO using reactive molecular beam epitaxy (MBE) and use a combination of ionic liquid gating and magneto-transport measurements to understand the nature and tunability of metal-insulator transition as a function of thickness for LNO. The underlying mechanisms for the transition are discussed in the framework of standard transport models. These results are discussed in the light of other Mott insulators such as Sr2IrO4, where we have performed similar measurements around the insulating state.

Study of thickness dependent sputtering in gold thin films by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Dash, P.; Sahoo, P. K.; Solanki, V.; Singh, U. B.; Avasthi, D. K.; Mishra, N. C.

2015-12-01

Gold thin films of varying thickness (10-100 nm) grown on silica substrates by e-beam evaporation method were irradiated by 120 MeV Au ions at 3 × 1012 and 1 × 1013 ions cm-2 fluences. Irradiation induced modifications of these films were probed by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and surface enhanced Raman scattering (SERS). Irradiation didn't affect the structure, the lattice parameter or the crystallite size, but modified the texturing of grains from [1 1 1] to [2 2 0]. RBS indicated thickness dependent sputtering on irradiation. The sputtering yield was found to decrease with increasing thickness. AFM indicated increase of roughness with increasing irradiation fluence for films of all thickness. In agreement with the AFM observation, the gold nanostructures on the surface of 20 nm thick film were found to increase the SERS signal of acridine orange dye attached to these structures. The SERS peaks were amplified by many fold with increasing ion fluence. The effect of 120 MeV Au ion irradiation on the grain texture, surface morphology and SERS activity in addition to the thickness dependent sputtering in gold thin films are explained by the thermal spike model of ion-matter interaction.

Characterization of Thin Film Dissolution in Water with in Situ Monitoring of Film Thickness Using Reflectometry.

PubMed

Yersak, Alexander S; Lewis, Ryan J; Tran, Jenny; Lee, Yung C

2016-07-13

Reflectometry was implemented as an in situ thickness measurement technique for rapid characterization of the dissolution dynamics of thin film protective barriers in elevated water temperatures above 100 °C. Using this technique, multiple types of coatings were simultaneously evaluated in days rather than years. This technique enabled the uninterrupted characterization of dissolution rates for different coating deposition temperatures, postdeposition annealing conditions, and locations on the coating surfaces. Atomic layer deposition (ALD) SiO2 and wet thermally grown SiO2 (wtg-SiO2) thin films were demonstrated to be dissolution-predictable barriers for the protection of metals such as copper. A ∼49% reduction in dissolution rate was achieved for ALD SiO2 films by increasing the deposition temperatures from 150 to 300 °C. ALD SiO2 deposited at 300 °C and followed by annealing in an inert N2 environment at 1065 °C resulted in a further ∼51% reduction in dissolution rate compared with the nonannealed sample. ALD SiO2 dissolution rates were thus lowered to values of wtg-SiO2 in water by the combination of increasing the deposition temperature and postdeposition annealing. Thin metal films, such as copper, without a SiO2 barrier corroded at an expected ∼1-2 nm/day rate when immersed in room temperature water. This measurement technique can be applied to any optically transparent coating.

A method for reducing the sloughing of thick blood films for malaria diagnosis.

PubMed

Norgan, Andrew P; Arguello, Heather E; Sloan, Lynne M; Fernholz, Emily C; Pritt, Bobbi S

2013-07-08

The gold standard for malaria diagnosis is the examination of thick and thin blood films. Thick films contain 10 to 20 times more blood than thin films, correspondingly providing increased sensitivity for malaria screening. A potential complication of thick film preparations is sloughing of the blood droplet from the slide during staining or rinsing, resulting in the loss of sample. In this work, two methods for improving thick film slide adherence ('scratch' (SCM) and 'acetone dip' (ADM) methods) were compared to the 'standard method' (SM) of thick film preparation. Standardized blood droplets from 26 previously examined EDTA whole blood specimens (22 positive and four negative) were concurrently spread on glass slides using the SM, ADM, and SCM. For the SM and ADM prepared slides, the droplet was gently spread to an approximate 22 millimeters in diameter spot on the slide using the edge of a second glass slide. For the SCM, the droplet was spread by carefully grinding (or scratching) it into the slide with the point of a second glass slide. Slides were dried for one hour in a laminar flow hood. For the ADM, slides were dipped once in an acetone filled Coplin jar and allowed to air dry. All slides were then Giemsa-stained and examined in a blinded manner. Adherence was assessed by blinded reviewers. No significant or severe defects were observed for slides prepared with the SCM. In contrast, 8 slides prepared by the ADM and 3 prepared using the SM displayed significant or severe defects. Thick films prepared by the three methods were microscopically indistinguishable and concordant results (positive or negative) were obtained for the three methods. Estimated parasitaemia of the blood samples ranged from 25 to 429,169 parasites/μL of blood. The SCM is an inexpensive, rapid, and simple method that improves the adherence of thick blood films to standard glass slides without altering general slide preparation, microscopic appearance or interpretability. Using the SCM

Dynamic response of film thickness in spiral-groove face seals

NASA Technical Reports Server (NTRS)

Dirusso, E.

1985-01-01

Tests were performed on an inward- and an outward-pumping spiral-groove face seal to experimentally determine the film thickness response to seal seat motions and to gain insight into the effect of secondary seal friction on film thickness behavior. Film thickness, seal seat axial motion, seal frictional torque, and film axial load were recorded as functions of time. The experiments revealed that for sinusoidal axial oscillations of the seal seat, the primary ring followed the seal seat motion very well. For a skewed seal seat, however, the primary ring did not follow the seal seat motion, and load-carrying capacity was degraded. Secondary seal friction was varied over a wide range to determine its effect on film thickness dynamics. The seals were tested with ambient air at room temperature and atmospheric pressure as the fluid medium. The test speed ranged from 7000 to 20,000 rpm. Seal tangential velocity ranged from 34 to 98 m/sec (113 to 323 ft/sec).

Thin-film metal hydrides.

PubMed

Remhof, Arndt; Borgschulte, Andreas

2008-12-01

The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

Optical properties of metal-hydride switchable films

NASA Astrophysics Data System (ADS)

Griessen, Ronald

2001-03-01

In 1996 we discovered that yttrium-, lanthanum-, and rare-earth-hydride (REHx) films [1] protected by a thin palladium layer, exhibit spectacular changes in their optical properties when the hydrogen concentration x is increased from 2 to 3. For example, a 500 nm thick YH2 film is metallic and shiny while YH3 is yellowish and transparent. The transition is reversible, fast [2, 3], and can simply be induced by adding or removing hydrogen from the gas phase, an electrolyte or from an H containing liquid. The optical switching that occurs near the metal-insulator transition of these hydrides is remarkably robust as it is not affected by structural or compositional disorder. It occurs in polycrystalline and epitaxial films, in alloys with cubic or hexagonal crystal structures,and deuterides [4] switch as well as hydrides. At small length scales epitaxial YHx films exhibit surprising structural properties which open the way to pixel-by-pixel optical switching [5]. Colour-neutral switchable mirrors based on RE-Mg alloys [6] can be used in all-solid-state switchable devices. Newest results for Rare-Earth free switchable mirrors will be presented. [1] J. N. Huiberts, R. Griessen, J. H. Rector, R. J. Wijngaarden, J. P. Dekker, D. G. de Groot and N. J. Koeman, Nature 380 (1996) 231; [2] S. J. van der Molen, J. W. J. Kerssemakers, J. H. Rector, N. J. Koeman, B. Dam, R. Griessen, J. Appl. Phys. 86 (1999) 6107; [3] F. J. A. den Broeder, S. J. van der Molen, et al., Nature 394 (1998)656; [4] A. T. M. van Gogh, E. S. Kooij, R. Griessen, Phys. Rev. Lett. 83 (1999) 4614; [5] J. W. J. Kerssemakers, S. J. van der Molen and R. Griessen, Nature 406 (2000) 489; [6] P. van der Sluis, M. Ouwerkerk and P. A. Duine, Appl. Phys. Lett. 70 (1997) 3356.

Effects of Loading Frequency and Film Thickness on the Mechanical Behavior of Nanoscale TiN Film

NASA Astrophysics Data System (ADS)

Liu, Jin-na; Xu, Bin-shi; Wang, Hai-dou; Cui, Xiu-fang; Jin, Guo; Xing, Zhi-guo

2017-09-01

The mechanical properties of a nanoscale-thickness film material determine its reliability and service life. To achieve quantitative detection of film material mechanical performance based on nanoscale mechanical testing methods and to explore the influence of loading frequency of the cycle load on the fatigue test, a TiN film was prepared on monocrystalline silicon by magnetron sputtering. The microstructure of the nanoscale-thickness film material was characterized by using scanning electron microscopy and high-resolution transmission electron microscopy. The residual stress distribution of the thin film was obtained by using an electronic film stress tester. The hardness values and the fatigue behavior were measured by using a nanomechanical tester. Combined with finite element simulation, the paper analyzed the influence of the film thickness and loading frequency on the deformation, as well as the equivalent stress and strain. The results showed that the TiN film was a typical face-centered cubic structure with a large amount of amorphous. The residual compressive stress decreased gradually with increasing thin film thickness, and the influence of the substrate on the elastic modulus and hardness was also reduced. A greater load frequency would accelerate the dynamic fatigue damage that occurs in TiN films.

Effect of Coulomb interaction on chemical potential of metal film

NASA Astrophysics Data System (ADS)

Kostrobij, P. P.; Markovych, B. M.

2018-07-01

The chemical potential of a metal film within the jellium model taking into account the Coulomb interaction between electrons is calculated. The surface potential is modelled as the infinite rectangular potential well. The behaviour of the chemical potential as a function of the film thickness is studied, the quantum size effect for this quantity is analysed. It is shown that taking into account the Coulomb interaction leads to a significant decrease of the chemical potential and to an enhancement of the quantum size effect.

Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palneedi, Haribabu; Functional Ceramics Group, Korea Institute of Materials Science; Maurya, Deepam

2015-07-06

A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, amore » colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.« less

Hexaferrite multiferroics: from bulk to thick films

NASA Astrophysics Data System (ADS)

Koutzarova, T.; Ghelev, Ch; Peneva, P.; Georgieva, B.; Kolev, S.; Vertruyen, B.; Closset, R.

2018-03-01

We report studies of the structural and microstructural properties of Sr3Co2Fe24O41 in bulk form and as thick films. The precursor powders for the bulk form were prepared following the sol-gel auto-combustion method. The prepared pellets were synthesized at 1200 °C to produce Sr3Co2Fe24O41. The XRD spectra of the bulks showed the characteristic peaks corresponding to the Z-type hexaferrite structure as a main phase and second phases of CoFe2O4 and Sr3Fe2O7-x. The microstructure analysis of the cross-section of the bulk pellets revealed a hexagonal sheet structure. Large areas were observed of packages of hexagonal sheets where the separate hexagonal particles were ordered along the c axis. Sr3Co2Fe24O41 thick films were deposited from a suspension containing the Sr3Co2Fe24O41 powder. The microstructural analysis of the thick films showed that the particles had the perfect hexagonal shape typical for hexaferrites.

Oxidized film structure and method of making epitaxial metal oxide structure

DOEpatents

Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

2003-02-25

A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

Physicochemical controls on absorbed water film thickness in unsaturated geological media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tokunaga, T.

2011-06-14

Adsorbed water films commonly coat mineral surfaces in unsaturated soils and rocks, reducing flow and transport rates. Therefore, it is important to understand how adsorbed film thickness depends on matric potential, surface chemistry, and solution chemistry. Here, the problem of adsorbed water film thickness is examined through combining capillary scaling with the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. Novel aspects of this analysis include determining capillary influences on film thicknesses, and incorporating solution chemistry-dependent electrostatic potential at air-water interfaces. Capillary analysis of monodisperse packings of spherical grains provided estimated ranges of matric potentials where adsorbed films are stable, and showed that pendular ringsmore » within drained porous media retain most of the 'residual' water except under very low matric potentials. Within drained pores, capillary contributions to thinning of adsorbed films on spherical grains are shown to be small, such that DLVO calculations for flat surfaces are suitable approximations. Hamaker constants of common soil minerals were obtained to determine ranges of the dispersion component to matric potential-dependent film thickness. The pressure component associated with electrical double layer forces was estimated using the compression and linear superposition approximations. The pH-dependent electrical double layer pressure component is the dominant contribution to film thicknesses at intermediate values of matric potential, especially in lower ionic strength solutions (< 10 mol m{sup -3}) on surfaces with higher magnitude electrostatic potentials (more negative than - 50 mV). Adsorbed water films are predicted to usually range in thickness from 1 to 20 nm in drained pores and fractures of unsaturated environments.« less

Physicochemical controls on adsorbed water film thickness in unsaturated geological media

NASA Astrophysics Data System (ADS)

Tokunaga, Tetsu K.

2011-08-01

Adsorbed water films commonly coat mineral surfaces in unsaturated soils and rocks, reducing flow and transport rates. Therefore, it is important to understand how adsorbed film thickness depends on matric potential, surface chemistry, and solution chemistry. Here the problem of adsorbed water film thickness is examined by combining capillary scaling with the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. Novel aspects of this analysis include determining capillary influences on film thicknesses and incorporating solution chemistry-dependent electrostatic potential at air-water interfaces. Capillary analysis of monodisperse packings of spherical grains provided estimated ranges of matric potentials where adsorbed films are stable and showed that pendular rings within drained porous media retain most of the "residual" water except under very low matric potentials. Within drained pores, capillary contributions to thinning of adsorbed films on spherical grains are shown to be small, such that DLVO calculations for flat surfaces are suitable approximations. Hamaker constants of common soil minerals were obtained to determine ranges of the dispersion component to matric potential-dependent film thickness. The pressure component associated with electrical double-layer forces was estimated using the compression and linear superposition approximations. The pH-dependent electrical double-layer pressure component is the dominant contribution to film thicknesses at intermediate values of matric potential, especially in lower ionic strength solutions (<10 mol m-3) on surfaces with higher-magnitude electrostatic potentials (more negative than ≈-50 mV). Adsorbed water films are predicted to usually range in thickness from ≈1 to 20 nm in drained pores and fractures of unsaturated environments.

In-situ and elementally resolved determination of the thickness uniformity of multi-ply films by confocal micro XRF.

PubMed

Peng, Song; Liu, Zhiguo; Sun, Tianxi; Wang, Guangfu; Ma, Yongzhong; Ding, Xunliang

2014-08-01

Confocal micro X-ray fluorescence (CM-XRF) with quasi-monochromatic excitation based on polycapillary X-ray optics was used to measure the thickness of multi-ply films. The relative errors of measuring an Fe film with a thickness of 16.3 μm and a Cu film with a thickness of 24.5 μm were 7.3% and 0.4%, respectively. The non-destructive and in-situ measurement of the thickness and uniformity of multi-ply films of Cu, Fe and Ni on a silicon surface was performed. CM-XRF was convenient in in-situ and elementally resolved analysis of the thickness of multi-ply films without a cumbersome theoretical correction model. Copyright © 2014 Elsevier Ltd. All rights reserved.

Percolation effect in thick film superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sali, R.; Harsanyi, G.

1994-12-31

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density atmore » the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.« less

A method to investigate the electron scattering characteristics of ultrathin metallic films by in situ electrical resistance measurements.

PubMed

Trindade, I G; Fermento, R; Leitão, D; Sousa, J B

2009-07-01

In this article, a method to measure the electrical resistivity/conductivity of metallic thin films during layer growth on specific underlayers is described. The in situ monitoring of an underlayer electrical resistance, its change upon the incoming of new material atoms/molecules, and the growth of a new layer are presented. The method is easy to implement and allows obtaining in situ experimental curves of electrical resistivity dependence upon film thickness with a subatomic resolution, providing insight in film growth microstructure characteristics, specular/diffuse electron scattering surfaces, and optimum film thicknesses.

Designing metal hemispheres on silicon ultrathin film solar cells for plasmonic light trapping.

PubMed

Gao, Tongchuan; Stevens, Erica; Lee, Jung-kun; Leu, Paul W

2014-08-15

We systematically investigate the design of two-dimensional silver (Ag) hemisphere arrays on crystalline silicon (c-Si) ultrathin film solar cells for plasmonic light trapping. The absorption in ultrathin films is governed by the excitation of Fabry-Perot TEMm modes. We demonstrate that metal hemispheres can enhance absorption in the films by (1) coupling light to c-Si film waveguide modes and (2) exciting localized surface plasmon resonances (LSPRs). We show that hemisphere arrays allow light to couple to fundamental TEm and TMm waveguide modes in c-Si film as well as higher-order versions of these modes. The near-field light concentration of LSPRs also may increase absorption in the c-Si film, though these resonances are associated with significant parasitic absorption in the metal. We illustrate how Ag plasmonic hemispheres may be utilized for light trapping with 22% enhancement in short-circuit current density compared with that of a bare 100 nm thick c-Si ultrathin film solar cell.

Formation of a strong electric field resulting in the excitation of microplasma discharges at the edge of a dielectric film on a metal in a plasma flow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, V. A., E-mail: ivanov@fpl.gpi.ru; Sakharov, A. S.; Konyzhev, M. E.

2016-06-15

Results are presented from experimental and analytical studies of the processes resulting in the excitation of microplasma discharges (MPDs) on a metal surface partially covered with a thin dielectric film under the action of an external plasma flow in vacuum. It is shown experimentally that MPDs are excited at the interface between the open metal surface and the region covered by the dielectric film. The probability of MPD excitation is investigated as a function of the thickness of the dielectric film deposited on the metal. It is found that, for a film thickness of 1 μm, the probability of MPDmore » excitation is close to unity. As the film thickness decreases below ~10 nm or increases above ~10 μm, the probability of MPD excitation is reduced by more than two orders of magnitude. A two-dimensional kinetic numerical code is developed that allows one to model the processes of Debye sheath formation and generation of a strong electric field near the edge of a finite-thickness dielectric film on a metal surface in a plasma flow for different configurations of the film edge. It is shown that the maximum value of the tangential component of the electric field is reached at the film edge and amounts to E{sub max} ≈ |φ{sub 0}|/2d (where φ{sub 0} < 0 is the electric potential applied to the metal and d is the film thickness), which for typical conditions of experiments on the excitation of MPDs on metal surfaces (φ{sub 0} ≈–400 V, d ≈ 1 μm) yields E{sub max} ≈ 2 MV/cm. The results of kinetic simulations confirm the qualitative idea about the mechanism of the formation of a strong electric field resulting in the excitation of MPDs at the edge of a dielectric film on a metal surface in a plasma flow and agree with experimental data.« less

Film thickness dependence of phase separation and dewetting behaviors in PMMA/SAN blend films.

PubMed

You, Jichun; Liao, Yonggui; Men, Yongfeng; Shi, Tongfei; An, Lijia

2010-09-21

Film thickness dependence of complex behaviors coupled by phase separation and dewetting in blend [poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN)] films on silicon oxide substrate at 175 °C was investigated by grazing incidence ultrasmall-angle X-ray scattering (GIUSAX) and in situ atomic force microscopy (AFM). It was found that the dewetting pathway was under the control of the parameter U(q0)/E, which described the initial amplitude of the surface undulation and original thickness of film, respectively. Furthermore, our results showed that interplay between phase separation and dewetting depended crucially on film thickness. Three mechanisms including dewetting-phase separation/wetting, dewetting/wetting-phase separation, and phase separation/wetting-pseudodewetting were discussed in detail. In conclusion, it is relative rates of phase separation and dewetting that dominate the interplay between them.

Thick, low-stress films, and coated substrates formed therefrom

DOEpatents

Henager, Jr., Charles H.; Knoll, Robert W.

1991-01-01

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.

Novel method for the measurement of liquid film thickness during fuel spray impingement on surfaces.

PubMed

Henkel, S; Beyrau, F; Hardalupas, Y; Taylor, A M K P

2016-02-08

This paper describes the development and application of a novel optical technique for the measurement of liquid film thickness formed on surfaces during the impingement of automotive fuel sprays. The technique makes use of the change of the light scattering characteristics of a metal surface with known roughness, when liquid is deposited. Important advantages of the technique over previously established methods are the ability to measure the time-dependent spatial distribution of the liquid film without a need to add a fluorescent tracer to the liquid, while the measurement principle is not influenced by changes of the pressure and temperature of the liquid or the surrounding gas phase. Also, there is no need for non-fluorescing surrogate fuels. However, an in situ calibration of the dependence of signal intensity on liquid film thickness is required. The developed method can be applied to measure the time-dependent and two-dimensional distribution of the liquid fuel film thickness on the piston or the liner of gasoline direct injection (GDI) engines. The applicability of this technique was evaluated with impinging sprays of several linear alkanes and alcohols with different thermo-physical properties. The surface temperature of the impingement plate was controlled to simulate the range of piston surface temperatures inside a GDI engine. Two sets of liquid film thickness measurements were obtained. During the first set, the surface temperature of the plate was kept constant, while the spray of different fuels interacted with the surface. In the second set, the plate temperature was adjusted to match the boiling temperature of each fuel. In this way, the influence of the surface temperature on the liquid film created by the spray of different fuels and their evaporation characteristics could be demonstrated.

All-dielectric resonant cavity-enabled metals with broadband optical transparency

NASA Astrophysics Data System (ADS)

Liu, Zhengqi; Zhang, Houjiao; Liu, Xiaoshan; Pan, Pingping; Liu, Yi; Tang, Li; Liu, Guiqiang

2017-06-01

Metal films with broadband optical transparency are desirable in many optoelectronic devices, such as displays, smart windows, light-emitting diodes and infrared detectors. As bare metal is opaque to light, this issue of transparency attracts great scientific interest. In this work, we proposed and demonstrated a feasible and universal approach for achieving broadband optical transparent (BOT) metals by utilizing all-dielectric resonant cavities. Resonant dielectrics provide optical cavity modes and couple strongly with the surface plasmons of the metal film, and therefore produce a broadband near-unity optical transparent window. The relative enhancement factor (EF) of light transmission exceeds 3400% in comparison with that of pure metal film. Moreover, the transparent metal motif can be realized by other common metals including gold (Au), silver (Ag) and copper (Cu). These optical features together with the fully retained electric and mechanical properties of a natural metal suggest that it will have wide applications in optoelectronic devices.

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction.

PubMed

Jeon, Youngeun; Jung, Sungchul; Jin, Hanbyul; Mo, Kyuhyung; Kim, Kyung Rok; Park, Wook-Ki; Han, Seong-Tae; Park, Kibog

2017-12-04

Terahertz (THz) detectors have been extensively studied for various applications such as security, wireless communication, and medical imaging. In case of metal-insulator-metal (MIM) tunnel junction THz detector, a small junction area is desirable because the detector response time can be shortened by reducing it. An edge metal-semiconductor-metal (EMSM) junction has been developed with a small junction area controlled precisely by the thicknesses of metal and semiconductor films. The voltage response of the EMSM THz detector shows the clear dependence on the polarization angle of incident THz wave and the responsivity is found to be very high (~2,169 V/W) at 0.4 THz without any antenna and signal amplifier. The EMSM junction structure can be a new and efficient way of fabricating the nonlinear device THz detector with high cut-off frequency relying on extremely small junction area.

Liquid crystal films as on-demand, variable thickness (50–5000 nm) targets for intense lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poole, P. L., E-mail: poole.134@osu.edu; Andereck, C. D.; Schumacher, D. W.

2014-06-15

We have developed a new type of target for intense laser-matter experiments that offers significant advantages over those currently in use. The targets consist of a liquid crystal film freely suspended within a metal frame. They can be formed rapidly on-demand with thicknesses ranging from nanometers to micrometers, where the particular value is determined by the liquid crystal temperature and initial volume as well as by the frame geometry. The liquid crystal used for this work, 8CB (4′-octyl-4-cyanobiphenyl), has a vapor pressure below 10{sup −6} Torr, so films made at atmospheric pressure maintain their initial thickness after pumping to high vacuum.more » Additionally, the volume per film is such that each target costs significantly less than one cent to produce. The mechanism of film formation and relevant physics of liquid crystals are described, as well as ion acceleration data from the first shots on liquid crystal film targets at the Ohio State University Scarlet laser facility.« less

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D.

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

Electron scattering characteristics of polycrystalline metal transition films by in-situ electrical resistance measurements

NASA Astrophysics Data System (ADS)

Trindade, I. G.; Leitão, D.; Fermento, R.; Pogorelev, Y.; Sousa, J. B.

2009-08-01

In-situ electrical resistance measurements were performed to obtain the scattering characteristics of very thin polycrystalline metal transition magnetic alloys grown by ion beam deposition (IBD) on specific underlayers. The experimental curves show size effects at small film thicknesses and important differences between Co 85Fe 15 and Ni 81Fe 19 thin layers grown on identical underlayers of Ta70 Å/Ru13 Å. The largest difference was observed in Ni 81Fe 19 films grown on underlayers of amorphous Ta70 Å. The experimental curves of electrical resistivity/conductivity variation with layer thickness were well fit within the Mayadas and Shatzkes (M-S) model, assuming specific formulations for grain growth with layer thickness.

The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films

NASA Astrophysics Data System (ADS)

Kim, Jae-Ho; Seong, Tae-Yeon; Ahn, Kyung-Jun; Chung, Kwun-Bum; Seok, Hae-Jun; Seo, Hyeong-Jin; Kim, Han-Ki

2018-05-01

We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.

Planarized thick copper gate polycrystalline silicon thin film transistors for ultra-large AMOLED displays

NASA Astrophysics Data System (ADS)

Yun, Seung Jae; Lee, Yong Woo; Son, Se Wan; Byun, Chang Woo; Reddy, A. Mallikarjuna; Joo, Seung Ki

2012-08-01

A planarized thick copper (Cu) gate low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) is fabricated for ultra-large active-matrix organic light-emitting diode (AMOLED) displays. We introduce a damascene and chemical mechanical polishing process to embed a planarized Cu gate of 500 nm thickness into a trench and Si3N4/SiO2 multilayer gate insulator, to prevent the Cu gate from diffusing into the silicon (Si) layer at 550°C, and metal-induced lateral crystallization (MILC) technology to crystallize the amorphous Si layer. A poly-Si TFT with planarized thick Cu gate exhibits a field effect mobility of 5 cm2/Vs and a threshold voltage of -9 V, and a subthreshold swing (S) of 1.4 V/dec.

Nonreciprocal dispersion of spin waves in ferromagnetic thin films covered with a finite-conductivity metal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mruczkiewicz, M.; Krawczyk, M.

2014-03-21

We study the effect of one-side metallization of a uniform ferromagnetic thin film on its spin-wave dispersion relation in the Damon–Eshbach geometry. Due to the finite conductivity of the metallic cover layer on the ferromagnetic film, the spin-wave dispersion relation may be nonreciprocal only in a limited wave-vector range. We provide an approximate analytical solution for the spin-wave frequency, discuss its validity, and compare it with numerical results. The dispersion is analyzed systematically by varying the parameters of the ferromagnetic film, the metal cover layer and the value of the external magnetic field. The conclusions drawn from this analysis allowmore » us to define a structure based on a 30 nm thick CoFeB film with an experimentally accessible nonreciprocal dispersion relation in a relatively wide wave-vector range.« less

Nanoscale strengthening mechanisms in metallic thin film systems

NASA Astrophysics Data System (ADS)

Schoeppner, Rachel Lynn

Nano-scale strengthening mechanisms for thin films were investigated for systems governed by two different strengthening techniques: nano-laminate strengthening and oxide dispersion strengthening. Films were tested under elevated temperature conditions to investigate changes in deformation mechanisms at different operating temperatures, and the structural stability. Both systems exhibit remarkable stability after annealing and thus long-term reliability. Nano-scale metallic multilayers with smaller layer thicknesses show a greater relative resistance to decreasing strength at higher temperature testing conditions than those with larger layer thicknesses. This is seen in both Cu/Ni/Nb multilayers as well as a similar tri-component bi-layer system (Cu-Ni/Nb), which removed the coherent interface from the film. Both nanoindentation and micro-pillar compression tests investigated the strain-hardening ability of these two systems to determine what role the coherent interface plays in this mechanism. Tri-layer films showed a higher strain-hardening ability as the layer thickness decreased and a higher strain-hardening exponent than the bi-layer system: verifying the presence of a coherent interface increases the strain-hardening ability of these multilayer systems. Both systems exhibited hardening of the room temperature strength after annealing, suggesting a change in microstructure has occurred, unlike that seen in other multilayer systems. Oxide dispersion strengthened Au films showed a marked increase in hardness and wear resistance with the addition of ZnO particles. The threshold for stress-induced grain-refinement as opposed to grain growth is seen at concentrations of at least 0.5 vol%. These systems exhibited stable microstructures during thermal cycling in films containing at least 1.0%ZnO. Nanoindentation experiments show the drop in hardness following annealing is almost completely attributed to the resulting grain growth. Four-point probe resistivity

Method and system for producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients

DOEpatents

Folta, James A.; Montcalm, Claude; Walton, Christopher

2003-01-01

A method and system for producing a thin film with highly uniform (or highly accurate custom graded) thickness on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source with controlled (and generally, time-varying) velocity. In preferred embodiments, the method includes the steps of measuring the source flux distribution (using a test piece that is held stationary while exposed to the source), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of sweep velocity modulation recipes, and determining from the predicted film thickness profiles a sweep velocity modulation recipe which is adequate to achieve a predetermined thickness profile. Aspects of the invention include a practical method of accurately measuring source flux distribution, and a computer-implemented method employing a graphical user interface to facilitate convenient selection of an optimal or nearly optimal sweep velocity modulation recipe to achieve a desired thickness profile on a substrate. Preferably, the computer implements an algorithm in which many sweep velocity function parameters (for example, the speed at which each substrate spins about its center as it sweeps across the source) can be varied or set to zero.

Surface-supported metal-organic framework thin films: fabrication methods, applications, and challenges.

PubMed

Liu, Jinxuan; Wöll, Christof

2017-10-02

Surface-supported metal-organic framework thin films are receiving increasing attention as a novel form of nanotechnology. New deposition techniques that enable the control of the film thickness, homogeneity, morphology, and dimensions with a huge number of metal-organic framework compounds offer tremendous opportunities in a number of different application fields. In response to increasing demands for environmental sustainability and cleaner energy, much effort in recent years has been devoted to the development of MOF thin films for applications in photovoltaics, CO 2 reduction, energy storage, water splitting, and electronic devices, as well as for the fabrication of membranes. Although existing applications are promising and encouraging, MOF thin films still face numerous challenges, including the need for a more thorough understanding of the thin-film growth mechanism, stability of the internal and external interfaces, strategies for doping and models for charge carrier transport. In this paper, we review the recent advances in MOF thin films, including fabrication and patterning strategies and existing nanotechnology applications. We conclude by listing the most attractive future opportunities as well as the most urgent challenges.

Thin-film thickness measurement method based on the reflection interference spectrum

NASA Astrophysics Data System (ADS)

Jiang, Li Na; Feng, Gao; Shu, Zhang

2012-09-01

A method is introduced to measure the thin-film thickness, refractive index and other optical constants. When a beam of white light shines on the surface of the sample film, the reflected lights of the upper and the lower surface of the thin-film will interfere with each other and reflectivity of the film will fluctuate with light wavelength. The reflection interference spectrum is analyzed with software according to the database, while the thickness and refractive index of the thin-film is measured.

Additive-free thick graphene film as an anode material for flexible lithium-ion batteries.

PubMed

Rana, Kuldeep; Kim, Seong Dae; Ahn, Jong-Hyun

2015-04-28

This work demonstrates a simple route to develop mechanically flexible electrodes for Li-ion batteries (LIBs) that are usable as lightweight effective conducting networks for both cathodes and anodes. Removing electrochemically dead elements, such as binders, conducting agents and metallic current collectors, from the battery components will allow remarkable progress in this area. To investigate the feasibility of using thick, additive-free graphene films as anodes for flexible LIBs, we have synthesized and tested thick, additive-free, freestanding graphene films as anodes, first in a coin cell and further in a flexible full cell. As an anode material in a half cell, it showed a discharge capacity of about 350 mA h g(-1) and maintained nearly this capacity over 50 cycles at various current rates. This film was also tested as an anode material in a full cell with a LiCoO2 cathode and showed good electrochemical performance. Because the graphene-based flexible film showed good performance in half- and full coin cells, we used this film as a flexible anode for flexible LIBs. No conducting agent or binder was used in the anode side, which helped in realizing the flexible LIBs. Using this, we demonstrate a thin, lightweight and flexible lithium ion battery with good electrochemical performance in both its flat and bent states.

Advances in thickness measurements and dynamic visualization of the tear film using non-invasive optical approaches.

PubMed

Bai, Yuqiang; Nichols, Jason J

2017-05-01

The thickness of tear film has been investigated under both invasive and non-invasive methods. While invasive methods are largely historical, more recent noninvasive methods are generally based on optical approaches that provide accurate, precise, and rapid measures. Optical microscopy, interferometry, and optical coherence tomography (OCT) have been developed to characterize the thickness of tear film or certain aspects of the tear film (e.g., the lipid layer). This review provides an in-depth overview on contemporary optical techniques used in studying the tear film, including both advantages and limitations of these approaches. It is anticipated that further developments of high-resolution OCT and other interferometric methods will enable a more accurate and precise measurement of the thickness of the tear film and its related dynamic properties. Copyright © 2017 Elsevier Ltd. All rights reserved.

Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

NASA Astrophysics Data System (ADS)

Ma, B.; Li, M.; Koritala, R. E.; Fisher, B. L.; Markowitz, A. R.; Erck, R. A.; Baurceanu, R.; Dorris, S. E.; Miller, D. J.; Balachandran, U.

2003-04-01

Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx9° was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55°. In-plane texture in the ISD MgO films developed in the first approx0.5 mum from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the substrate normal have a unique orientation relationship with the ISD MgO films. An orientation relationship of YBCOlangle100rangleparallelMgOlangle111rangle and YBCOlangle010rangleparallelMgOlangle110rangle was measured by x-ray pole figure analyses and confirmed by transmission electron microscopy. A Tc of 91 K with a sharp transition and transport Jc of 5.5 × 105 A cm-2 at 77 K in self-field were measured on a YBCO film that was 0.46 mum thick, 4 mm wide and 10 mm long.

The numerical modelling of falling film thickness flow on horizontal tubes

NASA Astrophysics Data System (ADS)

Hassan, I. A.; Sadikin, A.; Isa, N. Mat

2017-04-01

This paper presents a computational modelling of water falling film flowing over horizontal tubes. The objective of this study is to use numerical predictions for comparing the film thickness along circumferential direction of tube on 2-D CFD models. The results are then validated with a theoretical result in previous literatures. A comprehensive design of 2-D models have been developed according to the real application and actual configuration of the falling film evaporator as well as previous experimental parameters. A computational modelling of the water falling film is presented with the aid of Ansys Fluent software. The Volume of Fluid (VOF) technique is adapted in this analysis since its capabilities of determining the film thickness on tubes surface is highly reliable. The numerical analysis is carried out under influence of ambient pressures at temperature of 27 °C. Three types of CFD numerical models were analyzed in this simulation with inter tube spacing of 30 mm, 20 mm and 10 mm respectively. The use of a numerical simulation tool on water falling film has resulted in a detailed investigation of film thickness. Based on the numerical simulated results, it is found that the average values of water film thickness for each model are 0.53 mm, 0.58 mm, and 0.63 mm.

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

PubMed Central

Marr, Isabella; Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

2011-01-01

Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers. PMID:22164042

Effect of catalyst film thickness on carbon nanotube growth by selective area chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wei, Y. Y.; Eres, Gyula; Merkulov, V. I.; Lowndes, D. H.

2001-03-01

The correlation between prepatterned catalyst film thickness and carbon nanotube (CNT) growth by selective area chemical vapor deposition (CVD) was studied using Fe and Ni as catalyst. To eliminate sample-to-sample variations and create a growth environment in which the film thickness is the sole variable, samples with continuously changing catalyst film thickness from 0 to 60 nm were fabricated by electron-gun evaporation. Using thermal CVD CNTs preferentially grow as a dense mat on the thin regions of the catalyst film. Moreover, beyond a certain critical film thickness no tubes were observed. The critical film thickness for CNT growth was found to increase with substrate temperature. There appears to be no strong correlation between the film thickness and the diameter of the tubes. In contrast, using plasma enhanced CVD with Ni as catalyst, vertically oriented CNTs grow in the entire range of catalyst film thickness. The diameter of these CNTs shows a strong correlation with the catalyst film thickness. The significance of these experimental trends is discussed within the framework of the diffusion model for CNT growth.

Investigation of nickel-silicon metallization process

NASA Technical Reports Server (NTRS)

Macha, M.

1983-01-01

The metallization of silicon solar cells passivated with silicon nitride coating was investigated by using commercial Ni pastes #5517 from Thick Film Systems, #7028-5 from Cermalloy, experimental formulation # X-A by Sollos, Inc. and evaporated Ti-Ni film. Comparative and reference tests were done with the Dupont Ag paste #7095 and with a mixture of Ni paste #5517 with Ag paste #7095 in the respective ratio of 9 to 1 by weight. The evaluation criteria for the metallization was the mechanical bond strength of the contact, solderability, copper plating ability and electrical characteristics in terms of Voc, Isc values and shape of the V-I curve. The results revealed that the Dupont Ag paste #7095 mt all required criteria, while the quality of the cells metalized with the commercial Ni paste #5517 from Thick Film Systems, #7028-5 from Cermalloy as well as the experimental paste # X-A from Sollos, Inc. was below the acceptable standards. A significant improvement was obtained with the mixture of Ni paste #5517 from Thick Film Systems with 10% addition of Dupont paste # 7095.

Phase Evolution of YBa2Cu3O7-x films by all-chemical solution deposition route for coated conductors

NASA Astrophysics Data System (ADS)

Zhao, Yue; Tang, Xiao; Wu, Wei; Grivel, Jean-Claude

2014-05-01

In order to understand the all-chemical-solution-deposition (CSD) processes for manufacturing coated conductors, we investigated the phase evolution of YBa2Cu3O7 (YBCO) films deposited by a low-fluorine metal-organic solution deposition (LF-MOD) method on CSD derived Ce0.9La0.1O2/Gd2Zr2O7/NiW. It is shown that the phase transition from the pyrolyzed film to fully converted YBCO film in the LF-MOD process is similar to that in typical trifluoroacetates-metal organic deposition (TFA-MOD) processes even though the amount of TFA in the solution is reduced by almost one half compared with typical TFA-MOD cases. Moreover, we found that the formation of impurities (mainly BaCeO3, NiWO4 and NiO) is strongly related to the annealing temperature, i.e., the diffusion controlled reactions become intensive from 760 oC, which might be connected with the poor structural and superconducting properties of the films deposited at high sintering temperatures. Based on these results, the optimized growth conditions of YBCO films were established, and a high critical current density (Jc) of about 2 MA/cm2 (77 K, self field) is achieved in a 200 nm thick YBCO film in the architecture made by our all CSD route.

Energy driven self-organization in nanoscale metallic liquid films.

PubMed

Krishna, H; Shirato, N; Favazza, C; Kalyanaraman, R

2009-10-01

Nanometre thick metallic liquid films on inert substrates can spontaneously dewet and self-organize into complex nanomorphologies and nanostructures with well-defined length scales. Nanosecond pulses of an ultraviolet laser can capture the dewetting evolution and ensuing nanomorphologies, as well as introduce dramatic changes to dewetting length scales due to the nanoscopic nature of film heating. Here, we show theoretically that the self-organization principle, based on equating the rate of transfer of thermodynamic free energy to rate of loss in liquid flow, accurately describes the spontaneous dewetting. Experimental measurements of laser dewetting of Ag and Co liquid films on SiO(2) substrates confirm this principle. This energy transfer approach could be useful for analyzing the behavior of nanomaterials and chemical processes in which spontaneous changes are important.

Traction and film thickness measurements under starved elastohydrodynamic conditions

NASA Technical Reports Server (NTRS)

Wedeven, L. D.

1974-01-01

Traction measurements under starved elastohydrodynamic conditions were obtained for a point contact geometry. Simultaneous measurements of the film thickness and the locations of the inlet lubricant boundary were made optically. The thickness of a starved film for combination rolling and sliding conditions varies with the location of the inlet boundary in the same way found previously for pure rolling. A starved film was observed to possess greater traction than a flooded film for the same slide roll ratio. For a given slide roll ratio a starved film simply increases the shear rate in the Hertz region. The maximum shear rate depends on the degree of starvation and has no theoretical limit. Traction measurements under starved conditions were compared with flooded conditions under equivalent shear rates in the Hertz region. When the shear rates in the Hertz region were low and the film severely starved, the measured tractions were found to be much lower than expected.

A molecular dynamics study on thin film liquid boiling characteristics under rapid linear boundary heating: Effect of liquid film thickness

NASA Astrophysics Data System (ADS)

Rabbi, Kazi Fazle; Tamim, Saiful Islam; Faisal, A. H. M.; Mukut, K. M.; Hasan, Mohammad Nasim

2017-06-01

This study is a molecular dynamics investigation of phase change phenomena i.e. boiling of thin liquid films subjected to rapid linear heating at the boundary. The purpose of this study is to understand the phase change heat transfer phenomena at nano scale level. In the simulation, a thin film of liquid argon over a platinum surface has been considered. The simulation domain herein is a three-phase system consisting of liquid and vapor argon atoms placed over a platinum wall. Initially the whole system is brought to an equilibrium state at 90 K and then the temperature of the bottom wall is increased to a higher temperature (250K) within a finite time interval. Four different liquid argon film thicknesses have been considered (3 nm, 4 nm, 5 nm and 6 nm) in this study. The boundary heating rate (40×109 K/s) is kept constant in all these cases. Variation in system temperature, pressure, net evaporation number, spatial number density of the argon region with time for different film thickness have been demonstrated and analyzed. The present study indicates that the pattern of phase transition may be significantly different (i.e. evaporation or explosive boiling) depending on the liquid film thickness. Among the four cases considered in the present study, explosive boiling has been observed only for the liquid films of 5nm and 6nm thickness, while for the other cases, evaporation take place.

Large-scale and patternable graphene: direct transformation of amorphous carbon film into graphene/graphite on insulators via Cu mediation engineering and its application to all-carbon based devices

NASA Astrophysics Data System (ADS)

Chen, Yu-Ze; Medina, Henry; Lin, Hung-Chiao; Tsai, Hung-Wei; Su, Teng-Yu; Chueh, Yu-Lun

2015-01-01

Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a-C) film surprisingly undergoes a noticeable transformation to crystalline graphene. Furthermore, the thickness of graphene could be controlled, depending on the thickness of the pre-deposited a-C film. The transformation mechanism was investigated and explained in detail. This approach enables development of a one-step process to fabricate electrical devices made of all carbon material, highlighting the uniqueness of the novel approach for developing graphene electronic devices. Interestingly, the carbon electrodes made directly on the graphene layer by our approach offer a good ohmic contact compared with the Schottky barriers usually observed on graphene devices using metals as electrodes.Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a

Scaling of elongation transition thickness during thin-film growth on weakly interacting substrates

NASA Astrophysics Data System (ADS)

Lü, B.; Souqui, L.; Elofsson, V.; Sarakinos, K.

2017-08-01

The elongation transition thickness ( θElong) is a central concept in the theoretical description of thin-film growth dynamics on weakly interacting substrates via scaling relations of θElong with respect to rates of key atomistic film-forming processes. To date, these scaling laws have only been confirmed quantitatively by simulations, while experimental proof has been left ambiguous as it has not been possible to measure θElong. Here, we present a method for determining experimentally θElong for Ag films growing on amorphous SiO2: an archetypical weakly interacting film/substrate system. Our results confirm the theoretically predicted θElong scaling behavior, which then allow us to calculate the rates of adatom diffusion and island coalescence completion, in good agreement with the literature. The methodology presented herein casts the foundation for studying growth dynamics and cataloging atomistic-process rates for a wide range of weakly interacting film/substrate systems. This may provide insights into directed growth of metal films with a well-controlled morphology and interfacial structure on 2D crystals—including graphene and MoS2—for catalytic and nanoelectronic applications.

Properties of conductive thick-film inks

NASA Technical Reports Server (NTRS)

Holtze, R. F.

1972-01-01

Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.

Experimental characterization of electrochemically polymerized polycarbazole film and study of its behavior with different metals contacts

NASA Astrophysics Data System (ADS)

Srivastava, Aditi; Chakrabarti, P.

2017-12-01

In this paper, we present the method of fabrication, experimental characterization, and comparison of electrical parameters of semiconducting polycarbazole film with different rectifying metals contacts. Electrochemical polymerization and deposition of organic semiconductor, i.e., polycarbazole on ITO-coated glass substrate, were performed using an electrochemical workstation. Experimental characterization of the prepared polymer film was done in respect of morphology, absorption, bandgap, and thickness. The stability and electro-activity of polycarbazole film were verified by the cyclic voltammetric method. Study of the behavior of prepared polycarbazole film with the different metals contacts such as Aluminum, Copper, Tungsten, and Tin has been done using semiconductor device analyzer. Various electrical parameters such as barrier height, ideality factor, and reverse saturation current have been extracted with different metal contacts, and the values were compared and contrasted. The nature of I- V characteristic of polycarbazole film in non-contact mode has also been analyzed using scanning tunneling microscope. The rectifying I- V characteristics obtained with different metals contacts have also been validated by the simulation on Deckbuild platform of the of ATLAS® software tool from Silvaco Inc.

Thick-film acoustic emission sensors for use in structurally integrated condition-monitoring applications.

PubMed

Pickwell, Andrew J; Dorey, Robert A; Mba, David

2011-09-01

Monitoring the condition of complex engineering structures is an important aspect of modern engineering, eliminating unnecessary work and enabling planned maintenance, preventing failure. Acoustic emissions (AE) testing is one method of implementing continuous nondestructive structural health monitoring. A novel thick-film (17.6 μm) AE sensor is presented. Lead zirconate titanate thick films were fabricated using a powder/sol composite ink deposition technique and mechanically patterned to form a discrete thick-film piezoelectric AE sensor. The thick-film sensor was benchmarked against a commercial AE device and was found to exhibit comparable responses to simulated acoustic emissions.

Metal-on-metal hip joint tribology.

PubMed

Dowson, D; Jin, Z M

2006-02-01

The basic tribological features of metal-on-metal total hip replacements have been reviewed to facilitate an understanding of the engineering science underpinning the renaissance of these hard-on-hard joints. Metal-on-polymer hip replacements operate in the boundary lubrication regime, thus leading to the design guidance to reduce the femoral head diameter as much as is feasible to minimize frictional torque and volumetric wear. This explains why the gold-standard implant of this form from the past half-century had a diameter of only 22.225 mm (7/8 in). Metal-on-metal implants can operate in the mild mixed lubrication regime in which much of the applied load is supported by elastohydrodynamic films. Correct tribological design leads to remarkably low steady state wear rates. Promotion of the most effective elastohydrodynamic films calls for the largest possible head diameters and the smallest clearances that can reasonably be adopted, consistent with fine surface finishes, good sphericity and minimal structural elastic deformation of the cup on its foundations. This guidance, which is opposite in form to that developed for metal-on-polymer joints, is equally valid for solid (monolithic) metallic heads on metallic femoral stems and surface replacement femoral shells. Laboratory measurements of friction and wear in metal-on-metal joints have confirmed their potential to achieve a very mild form of mixed lubrication. The key lies in the generation of effective elastohydrodynamic lubricating films of adequate thickness compared with the composite roughness of the head and cup. The calculation of the film thickness is by no means easy, but the full procedure is outlined and the use of an empirical formula that displays good agreement with calculations based upon the full numerical solutions is explained. The representation of the lambda ratio, lambda, embracing both film thickness and composite roughness, is described.

Influence of artificial pinning centers on structural and superconducting properties of thick YBCO films on ABAD-YSZ templates

NASA Astrophysics Data System (ADS)

Pahlke, Patrick; Sieger, Max; Ottolinger, Rick; Lao, Mayraluna; Eisterer, Michael; Meledin, Alexander; Van Tendeloo, Gustaaf; Hänisch, Jens; Holzapfel, Bernhard; Schultz, Ludwig; Nielsch, Kornelius; Hühne, Ruben

2018-04-01

Recent efforts in the development of YBa2Cu3O7-x (YBCO) coated conductors are devoted to the increase of the critical current I c in magnetic fields. This is typically realized by growing thicker YBCO layers as well as by the incorporation of artificial pinning centers. We studied the growth of doped YBCO layers with a thickness of up to 7 μm using pulsed laser deposition with a growth rate of about 1.2 nm s-1. Industrially fabricated ion-beam textured YSZ templates based on metal tapes were used as substrates for this study. The incorporation of BaHfO3 (BHO) or Ba2Y(Nb0.5Ta0.5)O6 (BYNTO) secondary phase additions leads to a denser microstructure compared to undoped films. A purely c-axis-oriented YBCO growth is preserved up to a thickness of about 4 μm, whereas misoriented texture components were observed in thicker films. The critical temperature is slightly reduced compared to undoped films and independent of film thickness. The critical current density J c of the BHO- and BYNTO-doped YBCO layers is lower at 77 K and self-field compared to pure YBCO layers; however, I c increases up to a thickness of 5 μm. A comparison between films with a thickness of 1.3 μm revealed that the anisotropy of the critical current density J c(θ) strongly depends on the incorporated pinning centers. Whereas BHO nanorods lead to a strong B∣∣c-axis peak, the overall anisotropy is significantly reduced by the incorporation of BYNTO forming a mixture of short c-axis-oriented nanorods and small (a-b)-oriented platelets. As a result, the J c values of the doped films outperform the undoped samples at higher fields and lower temperatures for most magnetic field directions.

Electrical and structural properties of epitaxially deposited chromium thin films

NASA Astrophysics Data System (ADS)

Ohashi, M.; Sawabu, M.; Nakanishi, H.; Ohashi, K.; Maeta, K.

2018-05-01

We studied the electrical resistance and crystal structure of epitaxial chromium (Cr) films. The lattice constant of the Cr films was larger than that of the bulk Cr because of MgO substrate on which Cr was epitaxially deposited. A chromium oxide layer having a thickness of 1 nm was found on all films from the result of X-ray reflectivity measurements. The electrical resistivity ρ(T) shows metallic behavior for all epitaxial Cr films in contrast with polycrystalline one. However, the magnitude of ρ tends to increase and the antiferromagnetic interaction is suppressed as decreasing thickness of film.

Process for manufacture of thick film hydrogen sensors

DOEpatents

Perdieu, Louisa H.

2000-09-09

A thick film process for producing hydrogen sensors capable of sensing down to a one percent concentration of hydrogen in carrier gasses such as argon, nitrogen, and air. The sensor is also suitable to detect hydrogen gas while immersed in transformer oil. The sensor includes a palladium resistance network thick film printed on a substrate, a portion of which network is coated with a protective hydrogen barrier. The process utilizes a sequence of printing of the requisite materials on a non-conductive substrate with firing temperatures at each step which are less than or equal to the temperature at the previous step.

Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

NASA Astrophysics Data System (ADS)

Teii, Kungen; Kawamoto, Shinsuke; Fukui, Shingo; Matsumoto, Seiichiro

2018-04-01

Metal-insulator-metal capacitor structures using thick hexagonal and cubic boron nitride (hBN and cBN) films as dielectrics are produced by plasma jet-enhanced chemical vapor deposition, and their electrical transport and capacitance characteristics are studied in a temperature range of 298 to 473 K. The resistivity of the cBN film is of the order of 107 Ω cm at 298 K, which is lower than that of the hBN film by two orders of magnitude, while it becomes the same order as the hBN film above ˜423 K. The dominant current transport mechanism at high fields (≥1 × 104 V cm-1) is described by the Frenkel-Poole emission and thermionic emission models for the hBN and cBN films, respectively. The capacitance of the hBN film remains stable for a change in alternating-current frequency and temperature, while that of the cBN film has variations of at most 18%. The dissipation factor as a measure of energy loss is satisfactorily low (≤5%) for both films. The origin of leakage current and capacitance variation is attributed to a high defect density in the film and a transition interlayer between the substrate and the film, respectively. This suggests that cBN films with higher crystallinity, stoichiometry, and phase purity are potentially applicable for dielectrics like hBN films.

Structural and optical properties of ZnO thin films prepared by RF sputtering at different thicknesses

NASA Astrophysics Data System (ADS)

Hammad, Ahmed H.; Abdel-wahab, M. Sh.; Vattamkandathil, Sajith; Ansari, Akhalakur Rahman

2018-07-01

Hexagonal nanocrystallites of ZnO in the form of thin films were prepared by radio frequency sputtering technique. X-ray diffraction analysis reveals two prominent diffraction planes (002) and (103) at diffraction angles around 34.3 and 62.8°, respectively. The crystallite size increases through (103) plane from 56.1 to 64.8 Å as film thickness changed from 31 nm up to 280 nm while crystallites growth through (002) increased from 124 to 136 Å as film thickness varies from 31 to 107 nm and dropped to 115.8 Å at thickness 280 nm. The particle shape changes from spherical to longitudinal form. The particle size is 25 nm for films of thickness below 107 nm and increases at higher thicknesses (134 and 280 nm) from 30 to 40 nm, respectively. Optical band gap is deduced to be direct with values varied from 3.22 to 3.28 eV and the refractive index are evaluated based on the optical band values according to Moss, Ravindra-Srivastava, and Dimitrov-Sakka models. All refractive index models gave values around 2.3.

Thick film wireless and powerless strain sensor

NASA Astrophysics Data System (ADS)

Jia, Yi; Sun, Ke

2006-03-01

The development of an innovative wireless strain sensing technology has a great potential to extend its applications in manufacturing, civil engineering and aerospace industry. This paper presents a novel wireless and powerless strain sensor with a multi-layer thick film structure. The sensor employs a planar inductor (L) and capacitive transducer (C) resonant tank sensing circuit, and a strain sensitive material of a polarized polyvinylidene fluoride (PVDF) piezoelectric thick film to realize the wireless strain sensing by strain to frequency conversion and to receive radio frequency electromagnetic energy for powering the sensor. The prototype sensor was designed and fabricated. The results of calibration on a strain constant cantilever beam show a great linearity and sensitivity about 0.0013 in a strain range of 0-0.018.

Influences of film thickness on the structural, electrical and optical properties of CuAlO2 thin films

NASA Astrophysics Data System (ADS)

Dong, Guobo; Zhang, Ming; Wang, Mei; Li, Yingzi; Gao, Fangyuan; Yan, Hui; Diao, Xungang

2014-07-01

CuAlO2 films with different thickness were prepared by the radio frequency magnetron sputtering technique. The structural, electrical and optical properties of CuAlO2 were studied by X-ray diffraction, atomic force microscope, UV-Vis double-beam spectrophotometer and Hall measurements. The results indicate that the single phase hexagonal CuAlO2 is formed and the average grain size of CuAlO2 films increases with increasing film thickness. The results also exhibit that the lowering of bandgap and the increase of electrical conductivity of CuAlO2 films with the increase of their thickness, which are attributed to the improvement of the grain size and the anisotropic electrical property. According to the electrical and optical properties, the biggest figure of merit is achieved for the CuAlO2 film with the appropriate thickness of 165 nm.

Epitaxy, strain, and composition effects on metal-insulator transition characteristics of SmNiO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aydogdu, Gulgun H.; Ha, Sieu D.; Viswanath, B.

SmNiO{sub 3} (SNO) thin films were deposited on LaAlO{sub 3} (LAO), SrTiO{sub 3}, SrLaAlO{sub 4}, Si, and Al{sub 2}O{sub 3} (sapphire) substrates by RF magnetron sputtering and studies were conducted to understand how film structure and composition influence the insulator-metal transition properties. It is observed that the compressive strain induces the insulator to metal transition (MIT), while tensile strain suppresses it. In the case of non-epitaxial films, semiconducting behavior is obtained on sapphire over a broad temperature range, while on heavily-doped Si substrate; an MIT is seen in out-of-plane resistance measurement. In addition, thickness dependence on the resistance behavior andmore » nickel oxidation state has been examined for epitaxial SNO films on LAO substrates. Fine control of the MIT by modifications to the mismatch strain and thickness provides insights to enhance the performance and the functionality of these films for emerging electron devices.« less

Multiplexed Holographic Optical Data Storage In Thick Bacteriorhodopsin Films

NASA Technical Reports Server (NTRS)

Downie, John D.; Timucin, Dogan A.; Gary, Charles K.; Ozcan, Meric; Smithey, Daniel T.; Crew, Marshall

1998-01-01

The optical data storage capacity of photochromic bacteriorhodopsin films is investigated by means of theoretical calculations, numerical simulations, and experimental measurements on sequential recording of angularly multiplexed diffraction gratings inside a thick D85N BR film.

Thickness-dependence of optical constants for Ta2O5 ultrathin films

NASA Astrophysics Data System (ADS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

Confining metal-halide perovskites in nanoporous thin films

PubMed Central

Demchyshyn, Stepan; Roemer, Janina Melanie; Groiß, Heiko; Heilbrunner, Herwig; Ulbricht, Christoph; Apaydin, Dogukan; Böhm, Anton; Rütt, Uta; Bertram, Florian; Hesser, Günter; Scharber, Markus Clark; Sariciftci, Niyazi Serdar; Nickel, Bert; Bauer, Siegfried; Głowacki, Eric Daniel; Kaltenbrunner, Martin

2017-01-01

Controlling the size and shape of semiconducting nanocrystals advances nanoelectronics and photonics. Quantum-confined, inexpensive, solution-derived metal halide perovskites offer narrowband, color-pure emitters as integral parts of next-generation displays and optoelectronic devices. We use nanoporous silicon and alumina thin films as templates for the growth of perovskite nanocrystallites directly within device-relevant architectures without the use of colloidal stabilization. We find significantly blue-shifted photoluminescence emission by reducing the pore size; normally infrared-emitting materials become visibly red, and green-emitting materials become cyan and blue. Confining perovskite nanocrystals within porous oxide thin films drastically increases photoluminescence stability because the templates auspiciously serve as encapsulation. We quantify the template-induced size of the perovskite crystals in nanoporous silicon with microfocus high-energy x-ray depth profiling in transmission geometry, verifying the growth of perovskite nanocrystals throughout the entire thickness of the nanoporous films. Low-voltage electroluminescent diodes with narrow, blue-shifted emission fabricated from nanocrystalline perovskites grown in embedded nanoporous alumina thin films substantiate our general concept for next-generation photonic devices. PMID:28798959

Electrostatically assisted fabrication of silver-dielectric core/shell nanoparticles thin film capacitor with uniform metal nanoparticle distribution and controlled spacing.

PubMed

Li, Xue; Niitsoo, Olivia; Couzis, Alexander

2016-03-01

An electrostatically-assisted strategy for fabrication of thin film composite capacitors with controllable dielectric constant (k) has been developed. The capacitor is composed of metal-dielectric core/shell nanoparticle (silver/silica, Ag@SiO2) multilayer films, and a backfilling polymer. Compared with the simple metal particle-polymer mixtures where the metal nanoparticles (NP) are randomly dispersed in the polymer matrix, the metal volume fraction in our capacitor was significantly increased, owing to the densely packed NP multilayers formed by the electrostatically assisted assembly process. Moreover, the insulating layer of silica shell provides a potential barrier that reduces the tunneling current between neighboring Ag cores, endowing the core/shell nanocomposites with a stable and relatively high dielectric constant (k) and low dielectric loss (D). Our work also shows that the thickness of the SiO2 shell plays a dominant role in controlling the dielectric properties of the nanocomposites. Control over metal NP separation distance was realized not only by variation the shell thickness of the core/shell NPs but also by introducing a high k nanoparticle, barium strontium titanate (BST) of relatively smaller size (∼8nm) compared to 80-160nm of the core/shell Ag@SiO2 NPs. The BST assemble between the Ag@SiO2 and fill the void space between the closely packed core/shell NPs leading to significant enhancement of the dielectric constant. This electrostatically assisted assembly method is promising for generating multilayer films of a large variety of NPs over large areas at low cost. Copyright © 2015 Elsevier Inc. All rights reserved.

All-Ceramic Thin Film Battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

BOYLE, TIMOTHY J.; INGERSOLL, DAVID; CYGAN, RANDALL T.

2002-11-01

We have undertaken the synthesis of a thin film ''All Ceramic Battery'' (ACB) using solution route processes. Based on the literature and experimental results, we selected SnO{sub 2}, LiCoO{sub 2}, and LiLaTiO{sub 3} (LLT) as the anode, cathode, and electrolyte, respectively. Strain induced by lattice mismatch between the cathode and bottom electrode, as estimated by computational calculations, indicate that thin film orientations for batteries when thicknesses are as low as 500 {angstrom} are strongly controlled by surface energies. Therefore, we chose platinized silicon as the basal platform based on our previous experience with this material. The anode thin films weremore » generated by standard spin-cast methods and processing using a solution of [Sn(ONep)]{sub 8} and HOAc which was found to form Sn{sub 6}(O){sub 4}(ONep){sub 4}. Electrochemical evaluation showed that the SnO{sub 2} was converted to Sn{sup o} during the first cycle. The cathode was also prepared by spin coating using the novel [Li(ONep)]{sub 8} and Co(OAc){sub 2}. The films could be electrochemically cycled (i.e., charged/discharged), with all of the associated structural changes being observable by XRD. Computational models indicated that the LLT electrolyte would be the best available ceramic material for use as the electrolyte. The LLT was synthesized from [Li(ONep)]{sub 8}, [Ti(ONep){sub 4}]{sub 2}, and La(DIP){sub 3}(py){sub 3} with RTP processing at 900 C being necessary to form the perovskite phase. Alternatively, a novel route to thin films of the block co-polymer ORMOLYTE was developed. The integration of these components was undertaken with each part of the assembly being identifiably by XRD analysis (this will allow us to follow the progress of the charge/discharge cycles of the battery during use). SEM investigations revealed the films were continuous with minimal mixing. All initial testing of the thin-film cathode/electrolyte/anode ACB devices revealed electrical shorting

Ice-Accretion Scaling Using Water-Film Thickness Parameters

NASA Technical Reports Server (NTRS)

Anderson, David N.; Feo, Alejandro

2003-01-01

Studies were performed at INTA in Spain to determine water-film thickness on a stagnation-point probe inserted in a simulated cloud. The measurements were correlated with non-dimensional parameters describing the flow and the cloud conditions. Icing scaling tests in the NASA Glenn Icing Research Tunnel were then conducted using the Ruff scaling method with the scale velocity found by matching scale and reference values of either the INTA non-dimensional water-film thickness or a Weber number based on that film thickness. For comparison, tests were also performed using the constant drop-size Weber number and the average-velocity methods. The reference and scale models were both aluminum, 61-cm-span, NACA 0012 airfoil sections at 0 deg. AOA. The reference had a 53-cm-chord and the scale, 27 cm (1/2 size). Both models were mounted vertically in the center of the IRT test section. Tests covered a freezing fraction range of 0.28 to 1.0. Rime ice (n = 1.0) tests showed the consistency of the IRT calibration over a range of velocities. At a freezing fraction of 0.76, there was no significant difference in the scale ice shapes produced by the different methods. For freezing fractions of 0.40, 0.52 and 0.61, somewhat better agreement with the reference horn angles was typically achieved with the average-velocity and constant-film thickness methods than when either of the two Weber numbers was matched to the reference value. At a freezing fraction of 0.28, the four methods were judged equal in providing simulations of the reference shape.

Formation process of graphite film on Ni substrate with improved thickness uniformity through precipitation control

NASA Astrophysics Data System (ADS)

Kim, Seul-Gi; Hu, Qicheng; Nam, Ki-Bong; Kim, Mun Ja; Yoo, Ji-Beom

2018-04-01

Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

Solvent annealing induced phase separation and dewetting in PMMA∕SAN blend film: film thickness and solvent dependence.

PubMed

You, Jichun; Zhang, Shuangshuang; Huang, Gang; Shi, Tongfei; Li, Yongjin

2013-06-28

The competition between "dewetting" and "phase separation" behaviors in polymer blend films attracts significant attention in the last decade. The simultaneous phase separation and dewetting in PMMA∕SAN [poly(methyl methacrylate) and poly(styrene-ran-acrylonitrile)] blend ultrathin films upon solvent annealing have been observed for the first time in our previous work. In this work, film thickness and annealing solvent dependence of phase behaviors in this system has been investigated using atomic force microscopy and grazing incidence small-angle X-ray scattering (GISAXS). On one hand, both vertical phase separation and dewetting take place upon selective solvent vapor annealing, leading to the formation of droplet∕mimic-film structures with various sizes (depending on original film thickness). On the other hand, the whole blend film dewets the substrate and produces dispersed droplets on the silicon oxide upon common solvent annealing. GISAXS results demonstrate the phase separation in the big dewetted droplets resulted from the thicker film (39.8 nm). In contrast, no period structure is detected in small droplets from the thinner film (5.1 nm and 9.7 nm). This investigation indicates that dewetting and phase separation in PMMA∕SAN blend film upon solvent annealing depend crucially on the film thickness and the atmosphere during annealing.

Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Teh, Yen Chin; Saif, Ala'eddin A.; Azhar Zahid Jamal, Zul; Poopalan, Prabakaran

2017-11-01

Ba0.9Gd0.1TiO3 thin films have been fabricated on SiO2/Si and fused silica by sol-gel method. The films are prepared through a spin coating process and annealed at 900 °C to obtain crystallized films. The effect of film thickness on the microstructure and optical band gap has been investigated using X-ray diffractometer, atomic force microscope and ultraviolet-visible spectroscopy, respectively. XRD patterns confirm that the films crystallized with tetragonal phase perovskite structure. The films surface morphology is analysed through amplitude parameter analysis to find out that the grain size and surface roughness are increased with the increase of films thickness. The transmittance and absorbance spectra reveal that all films exhibit high absorption in UV region. The evaluated optical band gap is obtained in the range of 3.67 - 3.78 eV and is found to be decreased as the thickness increase.

Metallicity gradient of the thick disc progenitor at high redshift

NASA Astrophysics Data System (ADS)

Kawata, Daisuke; Allende Prieto, Carlos; Brook, Chris B.; Casagrande, Luca; Ciucă, Ioana; Gibson, Brad K.; Grand, Robert J. J.; Hayden, Michael R.; Hunt, Jason A. S.

2018-01-01

We have developed a novel Markov Chain Monte Carlo chemical 'painting' technique to explore possible radial and vertical metallicity gradients for the thick disc progenitor. In our analysis, we match an N-body simulation to the data from the Apache Point Observatory Galactic Evolution Experiment survey. We assume that the thick disc has a constant scaleheight and has completed its formation at an early epoch, after which time radial mixing of its stars has taken place. Under these assumptions, we find that the initial radial metallicity gradient of the thick disc progenitor should not be negative, but either flat or even positive, to explain the current negative vertical metallicity gradient of the thick disc. Our study suggests that the thick disc was built-up in an inside-out and upside-down fashion, and older, smaller and thicker populations are more metal poor. In this case, star-forming discs at different epochs of the thick disc formation are allowed to have different radial metallicity gradients, including a negative one, which helps to explain a variety of slopes observed in high-redshift disc galaxies. This scenario helps to explain the positive slope of the metallicity-rotation velocity relation observed for the Galactic thick disc. On the other hand, radial mixing flattens the slope of an existing gradient.

The anisotropic effective damping of thickness-dependent epitaxial Co2FeAl films studied by spin rectification

NASA Astrophysics Data System (ADS)

Chen, Zhendong; Kong, Wenwen; Mi, Kui; Chen, Guilin; Zhang, Peng; Fan, Xiaolong; Gao, Cunxu; Xue, Desheng

2018-03-01

Epitaxial Co2FeAl films with the thickness varying from 26.4 nm to 4.6 nm were grown on MgO(001) substrates by molecular beam epitaxy. Spin rectification was adopted to study the dynamic magnetic properties of the Co2FeAl films, considering the reported advantages of this technique with high thickness-independent sensitivity on samples. At a fixed microwave frequency, the in-plane angular dependent resonance fields and their linewidths exhibit a superposition of a uniaxial and a fourfold anisotropy for all samples. The results reveal an anisotropic damping behavior of the films. Along in-plane different azimuths of the films, frequency-dependent resonance-field linewidths were investigated. The anisotropic effective damping of the films with the thickness varying from 26.4 nm to 4.6 nm was then analyzed, which is contributed from the two-magnon scattering.

Research on the thickness control method of workbench oil film based on theoretical model

NASA Astrophysics Data System (ADS)

Pei, Tang; Lin, Lin; Liu, Ge; Yu, Liping; Xu, Zhen; Zhao, Di

2018-06-01

To improve the thickness adjustability of the workbench oil film, we designed a software system to control the thickness of oil film based on the Siemens 840dsl CNC system and set up an experimental platform. A regulation scheme of oil film thickness based on theoretical model is proposed, the accuracy and feasibility of which is proved by experiment results. It's verified that the method mentioned above can meet the demands of workbench oil film thickness control, the experiment is simple and efficient with high control precision. Reliable theory support is supplied for the development of workbench oil film active control system as well.

Plasmonic extinction in gold nanoparticle-polymer films as film thickness and nanoparticle separation decrease below resonant wavelength

NASA Astrophysics Data System (ADS)

Dunklin, Jeremy R.; Bodinger, Carter; Forcherio, Gregory T.; Keith Roper, D.

2017-01-01

Plasmonic nanoparticles embedded in polymer films enhance optoelectronic properties of photovoltaics, sensors, and interconnects. This work examined optical extinction of polymer films containing randomly dispersed gold nanoparticles (AuNP) with negligible Rayleigh scattering cross-sections at particle separations and film thicknesses less than (sub-) to greater than (super-) the localized surface plasmon resonant (LSPR) wavelength, λLSPR. Optical extinction followed opposite trends in sub- and superwavelength films on a per nanoparticle basis. In ˜70-nm-thick polyvinylpyrrolidone films containing 16 nm AuNP, measured resonant extinction per particle decreased as particle separation decreased from ˜130 to 76 nm, consistent with trends from Maxwell Garnett effective medium theory and coupled dipole approximation. In ˜1-mm-thick polydimethylsiloxane films containing 16-nm AuNP, resonant extinction per particle plateaued at particle separations ≥λLSPR, then increased as particle separation radius decreased from ˜514 to 408 nm. Contributions from isolated particles, interparticle interactions and heterogeneities in sub- and super-λLSPR films containing AuNP at sub-λLSPR separations were examined. Characterizing optoplasmonics of thin polymer films embedded with plasmonic NP supports rational development of optoelectronic, biomedical, and catalytic activity using these nanocomposites.

Electro-physical properties of superconducting ceramic thick film prepared by partial melting method.

PubMed

Lee, Sang Heon

2013-05-01

BiSrCaCuO superconductor thick films were prepared at several curing temperatures, and their electro-physical properties were determined to find an optimum fabrication conditions. Critical temperatures of the superconductors were decreased with increasing melting temperature, which was related to the amount of equilibrium phases of the superconducting materials with temperature. The critical temperature of BiSrCaCuO bulk and thick film superconductors were 107 K and 96 K, respectively. The variation of susceptibility of the superconductor thick film formed at 950 degrees C had multi-step-type curve for 70 G externally applied field, whereas, a superconductor thick film formed at 885 degrees C had a single step-type curve like a bulk BiSrCaCuO ceramic superconductor in the temperature-susceptibility curves. A partial melting at 865 degrees C is one of optimum conditions for making a superconductor thick film with a relatively homogeneous phase.

Metal thin film growth on multimetallic surfaces: From quaternary metallic glass to binary crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jing, Dapeng

2010-01-01

The work presented in this thesis mainly focuses on the nucleation and growth of metal thin films on multimetallic surfaces. First, we have investigated the Ag film growth on a bulk metallic glass surface. Next, we have examined the coarsening and decay of bilayer Ag islands on NiAl(110) surface. Third, we have investigated the Ag film growth on NiAl(110) surface using low-energy electron diffraction (LEED). At last, we have reported our investigation on the epitaxial growth of Ni on NiAl(110) surface. Some general conclusions can be drawn as follows. First, Ag, a bulk-crystalline material, initially forms a disordered wetting layermore » up to 4-5 monolayers on Zr-Ni-Cu-Al metallic glass. Above this coverage, crystalline 3D clusters grow, in parallel with the flatter regions. The cluster density increases with decreasing temperature, indicating that the conditions of island nucleation are far-from-equilibrium. Within a simple model where clusters nucleate whenever two mobile Ag adatoms meet, the temperature-dependence of cluster density yields a (reasonable) upper limit for the value of the Ag diffusion barrier on top of the Ag wetting layer of 0.32 eV. Overall, this prototypical study suggests that it is possible to grow films of a bulk-crystalline metal that adopt the amorphous character of a glassy metal substrate, if film thickness is sufficiently low. Next, the first study of coarsening and decay of bilayer islands has been presented. The system was Ag on NiAl(110) in the temperature range from 185 K to 250 K. The coarsening behavior, has some similarities to that seen in the Ag(110) homoepitaxial system studied by Morgenstern and co-workers. At 185 K and 205 K, coarsening of Ag islands follows a Smoluchowski ripening pathway. At 205 K and 250 K, the terrace diffusion limited Ostwald ripening dominants. The experimental observed temperature for the transition from SR to OR is 205 K. The SR exhibits anisotropic island diffusion and the OR exhibits 1D decay

Influence of film thickness on topology and related magnetic interactions in Fe nanoparticle films

NASA Astrophysics Data System (ADS)

Ausanio, G.; Iannotti, V.; Amoruso, S.; Bruzzese, R.; Wang, X.; Aruta, C.; Arzeo, M.; Lanotte, L.

2013-08-01

Fe nanoparticle (NP)-assembled thin films with different thickness were prepared by femtosecond-pulsed laser deposition using different deposition times. The proper selection of the deposition time allows to control, to a certain degree, the morphology and topology of the deposited Fe nanoparticles (NPs) assembly, fostering non-uniform dense assemblies of NPs, with the consequent reduction of the influence of the exchange interactions on the macroscopic magnetic properties with decreasing thickness. The magnetic behavior of the Fe NP-assembled films with decreasing thickness is characterized by higher coercive field ( H c) values (a factor ≈4.5) and a good compromise between the hysteresis loops squareness and moderate exchange interactions, strongly correlated with the NPs topology.

Thin noble metal films on Si (111) investigated by optical second-harmonic generation and photoemission

NASA Astrophysics Data System (ADS)

Pedersen, K.; Kristensen, T. B.; Pedersen, T. G.; Morgen, P.; Li, Z.; Hoffmann, S. V.

2002-05-01

Thin noble metal films (Ag, Au and Cu) on Si (111) have been investigated by optical second-harmonic generation (SHG) in combination with synchrotron radiation photoemission spectroscopy. The valence band spectra of Ag films show a quantization of the sp-band in the 4-eV energy range from the Fermi level down to the onset of the d-bands. For Cu and Au the corresponding energy range is much narrower and quantization effects are less visible. Quantization effects in SHG are observed as oscillations in the signal as a function of film thickness. The oscillations are strongest for Ag and less pronounced for Cu, in agreement with valence band photoemission spectra. In the case of Au, a reacted layer floating on top of the Au film masks the observation of quantum well levels by photoemission. However, SHG shows a well-developed quantization of levels in the Au film below the reacted layer. For Ag films, the relation between film thickness and photon energy of the SHG resonances indicates different types of resonances, some of which involve both quantum well and substrate states.

Fabrication and characterization of piezoelectric micromachined ultrasonic transducers with thick composite PZT films.

PubMed

Wang, Zhihong; Zhu, Weiguang; Zhu, Hong; Miao, Jianmin; Chao, Chen; Zhao, Changlei; Tan, Ooi Kiang

2005-12-01

Ferroelectric microelectromechanical systems (MEMS) has been a growing area of research in past decades, in which ferroelectric films are combined with silicon technology for a variety of applications, such as piezo-electric micromachined ultrasonic transducers (pMUTs), which represent a new approach to ultrasound detection and generation. For ultrasound-radiating applications, thicker PZT films are preferred because generative force and response speed of the diaphragm-type transducers increase with increasing film thickness. However, integration of 4- to 20-microm thick PZT films on silicon wafer, either the deposition or the patterning, is still a bottleneck in the micromachining process. This paper reports on a diaphragm-type pMUT. A composite coating technique based on chemical solution deposition and high-energy ball milled powder has been used to fabricate thick PZT films. Micromachining of the pMUTs using such thick films has been investigated. The fabricated pMUT with crack-free PZT films up to 7-microm thick was evaluated as an ultrasonic transmitter. The generated sound pressure level of up to 120 dB indicates that the fabricated pMUT has very good ultrasound-radiating performance and, therefore, can be used to compose pMUT arrays for generating ultrasound beam with high directivity in numerous applications. The pMUT arrays also have been demonstrated.

Study on optimizing ultrasonic irradiation period for thick polycrystalline PZT film by hydrothermal method.

PubMed

Ohta, Kanako; Isobe, Gaku; Bornmann, Peter; Hemsel, Tobias; Morita, Takeshi

2013-04-01

The hydrothermal method utilizes a solution-based chemical reaction to synthesize piezoelectric thin films and powders. This method has a number of advantages, such as low-temperature synthesis, and high purity and high quality of the product. In order to promote hydrothermal reactions, we developed an ultrasonic assisted hydrothermal method and confirmed that it produces dense and thick lead-zirconate-titanate (PZT) films. In the hydrothermal method, a crystal growth process follows the nucleation process. In this study, we verified that ultrasonic irradiation is effective for the nucleation process, and there is an optimum irradiation period to obtain thicker PZT films. With this optimization, a 9.2-μm-thick PZT polycrystalline film was obtained in a single deposition process. For this film, ultrasonic irradiation was carried out from the beginning of the reaction for 18 h, followed by a 6 h deposition without ultrasonic irradiation. These results indicate that the ultrasonic irradiation mainly promotes the nucleation process. Copyright © 2012 Elsevier B.V. All rights reserved.

Elastohydrodynamic film thickness formula based on X-ray measurements with a synthetic paraffinic oil

NASA Technical Reports Server (NTRS)

Loewenthal, S. H.; Parker, R. J.; Zaretsky, E. V.

1973-01-01

An empirical elastohydrodynamic film thickness formula for heavily loaded contacts based upon X-ray film thickness measurements made with a synthetic paraffinic oil is presented. The deduced relation was found to adequately reflect the high load dependence exhibited by the measured minimum film thickness data at high Hertizian contact stresses, that is, above 1.04 x 10 to the ninth N/sq m (150,000 psi). Comparisons were made with the numerical results from a theoretical isothermal film thickness formula. The effects of changes in contact geometry, material, and lubricant properties on the form of the empirical model are also discussed.

SnO2 epitaxial films with varying thickness on c-sapphire: Structure evolution and optical band gap modulation

NASA Astrophysics Data System (ADS)

Zhang, Mi; Xu, Maji; Li, Mingkai; Zhang, Qingfeng; Lu, Yinmei; Chen, Jingwen; Li, Ming; Dai, Jiangnan; Chen, Changqing; He, Yunbin

2017-11-01

A series of a-plane SnO2 films with thickness between 2.5 nm and 1436 nm were grown epitaxially on c-sapphire by pulsed laser deposition (PLD), to allow a detailed probe into the structure evolution and optical band gap modulation of SnO2 with growing thickness. All films exhibit excellent out-of-plane ordering (lowest (200) rocking-curve half width ∼0.01°) with an orientation of SnO2(100) || Al2O3(0001), while three equivalent domains that are rotated by 120° with one another coexist in-plane with SnO2[010] || Al2O3 [11-20]. Initially the SnO2(100) film assumes a two-dimensional (2D) layer-by-layer growth mode with atomically smooth surface (minimum root-mean-square roughness of 0.183 nm), and endures compressive strain along both c and a axes as well as mild tensile strain along the b-axis. With increasing thickness, transition from the 2D to 3D island growth mode takes place, leading to formation of various defects to allow relief of the stress and thus relaxation of the film towards bulk SnO2. More interestingly, with increasing thickness from nm to μm, the SnO2 films present a non-monotonic V-shaped variation in the optical band gap energy. While the band gap of SnO2 films thinner than 6.1 nm increases rapidly with decreasing film thickness due to the quantum size effect, the band gap of thicker SnO2 films broadens almost linearly with increasing film thickness up to 374 nm, as a result of the strain effect. The present work sheds light on future design of SnO2 films with desired band gap for particular applications by thickness control and strain engineering.

Fabrication of High-Resolution Gamma-Ray Metallic Magnetic Calorimeters with Ag:Er Sensor and Thick Electroplated Absorbers

NASA Astrophysics Data System (ADS)

Hummatov, Ruslan; Hall, John A.; Kim, Geon-Bo; Friedrich, Stephan; Cantor, Robin; Boyd, S. T. P.

2018-05-01

We are developing metallic magnetic calorimeters for high-resolution gamma-ray spectroscopy for non-destructive assay of nuclear materials. Absorbers for these higher-energy photons can require substantial thickness to achieve adequate stopping power. We developed a new absorber fabrication process using dry-film photoresists to electroform cantilevered, thick absorbers. Gamma detectors with these absorbers have an energy resolution of 38 eV FWHM at 60 keV. In this report, we summarize modifications to STARCryo's "Delta 1000" process for our devices and describe the new absorber fabrication process.

Effect of thickness on electrical properties of SILAR deposited SnS thin films

NASA Astrophysics Data System (ADS)

Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

2016-03-01

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

Thin films of mixed metal compounds

DOEpatents

Mickelsen, Reid A.; Chen, Wen S.

1985-01-01

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Thickness dependent optical and electrical properties of CdSe thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purohit, A., E-mail: anuradha.purohit34@gmail.com; Chander, S.; Nehra, S. P.

2016-05-06

The effect of thickness on the optical and electrical properties of CdSe thin films is investigated in this paper. The films of thickness 445 nm, 631 nm and 810 nm were deposited on glass and ITO coated glass substrates using thermal evaporation technique. The deposited thin films were thermally annealed in air atmosphere at temperature 100°C and were subjected to UV-Vis spectrophotometer and source meter for optical and electrical analysis respectively. The absorption coefficient is observed to increase with photon energy and found maximum in higher photon energy region. The extinction coefficient and refractive index are also calculated. The electrical analysis shows thatmore » the electrical resistivity is observed to be decreased with thickness.« less

Influence of phase transformation on stress evolution during growth of metal thin films on silicon.

PubMed

Fillon, A; Abadias, G; Michel, A; Jaouen, C; Villechaise, P

2010-03-05

In situ stress measurements during two-dimensional growth of low mobility metal films on amorphous Si were used to demonstrate the impact of interface reactivity and phase transformation on stress evolution. Using Mo1-xSix films as examples, the results show that the tensile stress rise, which develops after the film has become crystalline, is correlated with an increase in lateral grain size. The origin of the tensile stress is attributed to the volume change resulting from the alloy crystallization, which occurs at a concentration-dependent critical thickness.

Thickness dependencies of structural and magnetic properties of cubic and tetragonal Heusler alloy bilayer films

NASA Astrophysics Data System (ADS)

Ranjbar, R.; Suzuki, K. Z.; Sugihara, A.; Ando, Y.; Miyazaki, T.; Mizukami, S.

2017-07-01

The thickness dependencies of the structural and magnetic properties for bilayers of cubic Co-based Heusler alloys (CCHAs: Co2FeAl (CFA), Co2FeSi (CFS), Co2MnAl (CMA), and Co2MnSi (CMS)) and D022-MnGa were investigated. Epitaxy of the B2 structure of CCHAs on a MnGa film was achieved; the smallest thickness with the B2 structure was found for 3-nm-thick CMS and CFS. The interfacial exchange coupling (Jex) was antiferromagnetic (AFM) for all of the CCHAs/MnGa bilayers except for unannealed CFA/MnGa samples. A critical thickness (tcrit) at which perpendicular magnetization appears of approximately 4-10 nm for the CMA/MnGa and CMS/MnGa bilayers was observed, whereas this thickness was 1-3 nm for the CFA/MnGa and CFS/MnGa films. The critical thickness for different CCHAs materials is discussed in terms of saturation magnetization (Ms) and the Jex .

Two-dimensional turning of thermal flux from normal to lateral propagation in thin metal film irradiated by femtosecond laser pulse

NASA Astrophysics Data System (ADS)

Shepelev, V. V.; Inogamov, N. A.

2018-01-01

There are various geometrical variants of laser illumination and target design. Important direction of investigations is connected with tightly focused action (spot size may be less than micron) onto a thin metal film: thickness of a film is just few skin-layer depths. Duration of a pulse is τ L ˜ 0.1 ps. In these conditions energy absorbed in a skin layer first propagates normally to a surface: gradient ∂Te /∂x dominates, here and below x and y are normal and lateral directions. This process in 1-2 ps homogenizes electron temperature T e along thickness of a film. We consider conditions when a film or is supported by weakly conducting substrate, or is free standing. Therefore all absorbed energy is confined inside the film. At the next stage the internal energy begin to flow along the lateral direction—thus direction of energy expansion is changed from x to y because of the heat non-penetrating boundary condition imposed on the rear-side of the film. At the short two-temperature stage of lateral expansion the thermal conductivity κ is high. After that electron and ion temperatures equilibrates and later on the heat propagates with usual value of κ. Lateral expansion cools down the hot spot on long time scales and finally the molten spot recrystallizes. Two-dimensional approach allows us to consider all these stages from propagation in x direction (normal to a film) to propagation in y direction (along a film).

Kinetics of sub-spinodal dewetting of thin films of thickness dependent viscosity.

PubMed

Kotni, Tirumala Rao; Khanna, Rajesh; Sarkar, Jayati

2017-05-04

An alternative explanation of the time varying and very low growth exponents in dewetting of polymer films like polystyrene films is presented based on non-linear simulations. The kinetics of these films is explored within the framework of experimentally observed thickness dependent viscosity. These films exhibit sub-spinodal dewetting via formation of satellite holes in between primary dewetted holes under favorable conditions of excess intermolecular forces and film thicknesses. We find that conditions responsible for sub-spinodal dewetting concurrently lead to remarkable changes in the kinetics of dewetting of even primary holes. For example, the radius of the hole grows in time with a power-law growth exponent sequence of [Formula: see text], in contrast to the usual  ∼4/5. This is due to the cumulative effect of reduced rim mobility due to thickness dependent viscosity and hindrance created by satellite holes.

Design and characterization of terahertz-absorbing nano-laminates of dielectric and metal thin films.

PubMed

Bolakis, C; Grbovic, D; Lavrik, N V; Karunasiri, G

2010-07-05

A terahertz-absorbing thin-film stack, containing a dielectric Bragg reflector and a thin chromium metal film, was fabricated on a silicon substrate for applications in bi-material terahertz (THz) sensors. The Bragg reflector is to be used for optical readout of sensor deformation under THz illumination. The THz absorption characteristics of the thin-film composite were measured using Fourier transform infrared spectroscopy. The absorption of the structure was calculated both analytically and by finite element modeling and the two approaches agreed well. Finite element modeling provides a convenient way to extract the amount of power dissipation in each layer and is used to quantify the THz absorption in the multi-layer stack. The calculation and the model were verified by experimentally characterizing the multi-layer stack in the 3-5 THz range. The measured and simulated absorption characteristics show a reasonably good agreement. It was found that the composite film absorbed about 20% of the incident THz power. The model was used to optimize the thickness of the chromium film for achieving high THz absorption and found that about 50% absorption can be achieved when film thickness is around 9 nm.

Reduced temperature-dependent thermal conductivity of magnetite thin films by controlling film thickness

PubMed Central

2014-01-01

We report on the out-of-plane thermal conductivities of epitaxial Fe3O4 thin films with thicknesses of 100, 300, and 400 nm, prepared using pulsed laser deposition (PLD) on SiO2/Si substrates. The four-point probe three-omega (3-ω) method was used for thermal conductivity measurements of the Fe3O4 thin films in the temperature range of 20 to 300 K. By measuring the temperature-dependent thermal characteristics of the Fe3O4 thin films, we realized that their thermal conductivities significantly decreased with decreasing grain size and thickness of the films. The out-of-plane thermal conductivities of the Fe3O4 films were found to be in the range of 0.52 to 3.51 W/m · K at 300 K. For 100-nm film, we found that the thermal conductivity was as low as approximately 0.52 W/m · K, which was 1.7 to 11.5 order of magnitude lower than the thermal conductivity of bulk material at 300 K. Furthermore, we calculated the temperature dependence of the thermal conductivity of these Fe3O4 films using a simple theoretical Callaway model for comparison with the experimental data. We found that the Callaway model predictions agree reasonably with the experimental data. We then noticed that the thin film-based oxide materials could be efficient thermoelectric materials to achieve high performance in thermoelectric devices. PMID:24571956

Measuring Thicknesses of Coatings on Metals

NASA Technical Reports Server (NTRS)

Cotty, Glenn M., Jr.

1986-01-01

Digital light sensor and eddy-current sensor measure thickness without contact. Surface of Coating reflects laser beam to optical sensor. Position of reflected spot on sensor used by microcomputer to calculate coating thickness. Eddy-current sensor maintains constant distance between optical sensor and metal substrate. When capabilities of available components fully exploited, instrument measures coatings from 0.001 to 6 in. (0.0025 to 15 cm) thick with accuracy of 1 part in 4,000. Instrument readily incorporated in automatic production and inspection systems. Used to inspect thermal-insulation layers, paint, and protective coatings. Also used to control application of coatings to preset thicknesses.

Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Ravi; Kaur, Davinder, E-mail: dkaurfph@iitr.ac.in

2016-05-06

In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with differentmore » deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.« less

Phase-field simulations of thickness-dependent domain stability in PbTiO3 thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheng, Guang; Hu, Jia-Mian; Zhang, Jinxian

Phase-field approach is used to predict the thickness effect on the domain stability in ferroelectric thin films. The strain relaxation mechanism and critical thickness for dislocation formation from both Matthews-Blakeslee (MB) and People-Bean (PB) models are employed. Thickness - strain domain stability diagrams are obtained for PbTiO3 thin films under different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experiment measurements in PbTiO3 thin films grown on SrTiO3 and KTaO3 substrates.

Simultaneous reflectometry and interferometry for measuring thin-film thickness and curvature

NASA Astrophysics Data System (ADS)

Arends, A. A.; Germain, T. M.; Owens, J. F.; Putnam, S. A.

2018-05-01

A coupled reflectometer-interferometer apparatus is described for thin-film thickness and curvature characterization in the three-phase contact line region of evaporating fluids. Validation reflectometry studies are provided for Au, Ge, and Si substrates and thin-film coatings of SiO2 and hydrogel/Ti/SiO2. For interferometry, liquid/air and solid/air interferences are studied, where the solid/air samples consisted of glass/air/glass wedges, cylindrical lenses, and molded polydimethylsiloxane lenses. The liquid/air studies are based on steady-state evaporation experiments of water and isooctane on Si and SiO2/Ti/SiO2 wafers. The liquid thin-films facilitate characterization of both (i) the nano-scale thickness of the absorbed fluid layer and (ii) the macro-scale liquid meniscus thickness, curvature, and curvature gradient profiles. For our validation studies with commercial lenses, the apparatus is shown to measure thickness profiles within 4.1%-10.8% error.

Corrosion-resistant metal surfaces

DOEpatents

Sugama, Toshifumi [Wading River, NY

2009-03-24

The present invention relates to metal surfaces having thereon an ultrathin (e.g., less than ten nanometer thickness) corrosion-resistant film, thereby rendering the metal surfaces corrosion-resistant. The corrosion-resistant film includes an at least partially crosslinked amido-functionalized silanol component in combination with rare-earth metal oxide nanoparticles. The invention also relates to methods for producing such corrosion-resistant films.

Influence of colorant and film thickness on thermal aging characteristics of oxo-biodegradable plastic bags

NASA Astrophysics Data System (ADS)

Leuterio, Giselle Lou D.; Pajarito, Bryan B.; Domingo, Carla Marie C.; Lim, Anna Patricia G.

2016-05-01

Functional, lightweight, strong and cheap plastic bags incorporated with pro-oxidants undergo accelerated degradation under exposure to heat and oxygen. This work investigated the effect of colorant and film thickness on thermal aging characteristics of commercial oxo-biodegradable plastic bag films at 70 °C. Degradation is monitored through changes in infrared absorption, weight, and tensile properties of thermally aged films. The presence of carbonyl band in infrared spectrum after 672 h of thermal aging supports the degradation behavior of exposed films. Results show that incorporation of colorant and increasing thickness exhibit low maximum weight uptake. Titanium dioxide as white colorant in films lowers the susceptibility of films to oxygen uptake but enhances physical degradation. Higher amount of pro-oxidant loading also contributes to faster degradation. Opaque films are characterized by low tensile strength and high elastic modulus. Decreasing the thickness contributes to lower tensile strength of films. Thermally aged films with colorant and low thickness promote enhanced degradation.

All-alkoxide synthesis of strontium-containing metal oxides

DOEpatents

Boyle, Timothy J.

2001-01-01

A method for making strontium-containing metal-oxide ceramic thin films from a precursor liquid by mixing a strontium neo-pentoxide dissolved in an amine solvent and at least one metal alkoxide dissolved in a solvent, said at least one metal alkoxide selected from the group consisting of alkoxides of calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, yttrium, lanthanum, antimony, chromium and thallium, depositing a thin film of the precursor liquid on a substrate, and heating the thin film in the presence of oxygen at between 550 and 700.degree. C.

Drude analysis of transition metal nitride films for solar control and low-E multilayers

NASA Astrophysics Data System (ADS)

Veszelei, Monica; Ribbing, Carl-Gustaf; Roos, Arne

1994-09-01

The Drude-like behavior of the group IVB metal nitrides: TiN, ZrN and HfN furnishes the physical basis for the use of these hard, inert materials as replacement for noble metals in optically selective multilayers. A low value of the refractive index, n, in the visible region and rapidly increasing extinction coefficient, k, when the wavelength increases into the infrared, is characteristic for these nitrides, although to a lesser extent than for the noble metals. A screened Drude model can be fitted to the experimental dielectric function over the near infrared and at least part of the visible spectrum to determine the parameters: plasma resonance energy hvp and relaxation time (tau) . Systematic studies of TiN and ZrN films show that n increases with decreasing film thickness below 60 nm when the film transmits. This increase can be modelled with a increasing Drude parameter (tau) and has previously been explained as an extrinsic effect from defects etc. It is argued that most of this change can be understood as an effect of diffuse scattering against the back surface of the film and is therefore not cured by improvements in deposition technology.

Thickness Dependence of Failure in Ultra-thin Glassy Polymer Films

NASA Astrophysics Data System (ADS)

Bay, Reed; Shimomura, Shinichiro; Liu, Yujie; Ilton, Mark; Crosby, Alfred

The physical properties of polymer thin films change as the polymer chains become confined. Similar changes in mechanical properties have been observed, though these critical properties have only been explored a limited extent and with indirect methods. Here, we use a recently developed method to measure the complete uniaxial stress strain relationship of polymer thin films of polystyrene films (PS, Mw =130kg/mol, 490kg/mol, and 853kg/mol) as a function of thickness (20 nm-220nm). In this method, we hold a `dog-bone' shaped film on water between a flexible cantilever and a movable rigid boundary, measuring force-displacement from the cantilever deflection. From our measurements, we find that the modulus decreases as the PS chains become confined. The PS thin films exhibit ``ideal perfectly plastic'' behavior due to crazing, which differs from the typical brittle response of bulk PS. The draw stress due to crazing decreases with film thickness. These results provide new fundamental insight into how polymer behavior is altered due to structural changes in the entangled polymer network upon confinement. NSF DMR 1608614.

Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Pryds, N.; Toftmann, B.; Bilde-Sørensen, J. B.; Schou, J.; Linderoth, S.

2006-04-01

Films of yttria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM) with use of a method similar to one described by Bishop and Poole. The attenuation of the electron-induced X-rays from the Si wafer by the film was monitored at a number of points along a diameter and the thickness was determined by Monte Carlo simulations of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine the thickness of a large film, i.e. up to diameters of 125 mm, in a relatively short time, without destroying the substrate, without the need of a standard sample and without the need of a flat substrate. We have also demonstrated that by controlling the deposition parameters large-area YSZ films with uniform thickness can be produced.

Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.

PubMed

Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K

2010-10-01

This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.

Optimization of Thick, Large Area YBCO Film Growth Through Response Surface Methods

NASA Astrophysics Data System (ADS)

Porzio, J.; Mahoney, C. H.; Sullivan, M. C.

2014-03-01

We present our work on the optimization of thick, large area YB2C3O7-δ (YBCO) film growth through response surface methods. Thick, large area films have commercial uses and have recently been used in dramatic demonstrations of levitation and suspension. Our films are grown via pulsed laser deposition and we have optimized growth parameters via response surface methods. Response surface methods is a statistical tool to optimize selected quantities with respect to a set of variables. We optimized our YBCO films' critical temperatures, thicknesses, and structures with respect to three PLD growth parameters: deposition temperature, laser energy, and deposition pressure. We will present an overview of YBCO growth via pulsed laser deposition, the statistical theory behind response surface methods, and the application of response surface methods to pulsed laser deposition growth of YBCO. Results from the experiment will be presented in a discussion of the optimized film quality. Supported by NFS grant DMR-1305637

Multi-band filter design with less total film thickness for short-wave infrared

NASA Astrophysics Data System (ADS)

Yan, Yung-Jhe; Chien, I.-Pen; Chen, Po-Han; Chen, Sheng-Hui; Tsai, Yi-Chun; Ou-Yang, Mang

2017-08-01

A multi-band pass filter array was proposed and designed for short wave infrared applications. The central wavelength of the multi-band pass filters are located about 905 nm, 950 nm, 1055 nm and 1550 nm. In the simulation of an optical interference band pass filter, high spectrum performance (high transmittance ratio between the pass band and stop band) relies on (1) the index gap between the selected high/low-index film materials, with a larger gap correlated to higher performance, and (2) sufficient repeated periods of high/low-index thin-film layers. When determining high and low refractive index materials, spectrum performance was improved by increasing repeated periods. Consequently, the total film thickness increases rapidly. In some cases, a thick total film thickness is difficult to process in practice, especially when incorporating photolithography liftoff. Actually the maximal thickness of the photoresist being able to liftoff will bound the total film thickness of the band pass filter. For the application of the short wave infrared with the wavelength range from 900nm to 1700nm, silicone was chosen as a high refractive index material. Different from other dielectric materials used in the visible range, silicone has a higher absorptance in the visible range opposite to higher transmission in the short wave infrared. In other words, designing band pass filters based on silicone as a high refractive index material film could not obtain a better spectrum performance than conventional high index materials like TiO2 or Ta2O5, but also its material cost would reduce about half compared to the total film thickness with the conventional material TiO2. Through the simulation and several experimental trials, the total film thickness below 4 um was practicable and reasonable. The fabrication of the filters was employed a dual electric gun deposition system with ion assisted deposition after the lithography process. Repeating four times of lithography and deposition

Frontier molecular orbitals of a single molecule adsorbed on thin insulating films supported by a metal substrate: electron and hole attachment energies.

PubMed

Scivetti, Iván; Persson, Mats

2017-09-06

We present calculations of vertical electron and hole attachment energies to the frontier orbitals of a pentacene molecule absorbed on multi-layer sodium chloride films supported by a copper substrate using a simplified density functional theory (DFT) method. The adsorbate and the film are treated fully within DFT, whereas the metal is treated implicitly by a perfect conductor model. We find that the computed energy gap between the highest and lowest unoccupied molecular orbitals-HOMO and LUMO -from the vertical attachment energies increases with the thickness of the insulating film, in agreement with experiments. This increase of the gap can be rationalised in a simple dielectric model with parameters determined from DFT calculations and is found to be dominated by the image interaction with the metal. We find, however, that this simplified model overestimates the downward shift of the energy gap in the limit of an infinitely thick film.

Frontier molecular orbitals of a single molecule adsorbed on thin insulating films supported by a metal substrate: electron and hole attachment energies

NASA Astrophysics Data System (ADS)

Scivetti, Iván; Persson, Mats

2017-09-01

We present calculations of vertical electron and hole attachment energies to the frontier orbitals of a pentacene molecule absorbed on multi-layer sodium chloride films supported by a copper substrate using a simplified density functional theory (DFT) method. The adsorbate and the film are treated fully within DFT, whereas the metal is treated implicitly by a perfect conductor model. We find that the computed energy gap between the highest and lowest unoccupied molecular orbitals—HOMO and LUMO -from the vertical attachment energies increases with the thickness of the insulating film, in agreement with experiments. This increase of the gap can be rationalised in a simple dielectric model with parameters determined from DFT calculations and is found to be dominated by the image interaction with the metal. We find, however, that this simplified model overestimates the downward shift of the energy gap in the limit of an infinitely thick film.

Capability of Sputtered Micro-patterned NiTi Thick Films

NASA Astrophysics Data System (ADS)

Bechtold, Christoph; Lima de Miranda, Rodrigo; Quandt, Eckhard

2015-09-01

Today, most NiTi devices are manufactured by a combination of conventional metal fabrication steps, e.g., melting, extrusion, cold working, etc., and are subsequently structured by high accuracy laser cutting. This combination has been proven to be very successful; however, there are several limitations to this fabrication route, e.g., in respect to the fabrication of more complex device designs, device miniaturization or the combination of different materials for the integration of further functionality. These issues have to be addressed in order to develop new devices and applications. The fabrication of micro-patterned films using magnetron sputtering, UV lithography, and wet etching has great potential to overcome limitations of conventional device manufacturing. Due to its fabrication characteristics, this method allows the production of devices with complex designs, high structural accuracy, smooth edge profile, at layer thicknesses up to 75 µm. The aim of this study is to present recent developments in the field of NiTi thin film technology, its advantages and limitations, as well as new possible applications in the medical and in non-medical fields. These developments include among others NiTi scaffold structures covered with NiTi membranes for their potential use as filters, heart valve components or aneurysm treatments, as well as micro-actuators for consumable electronics or automotive applications.

Preparation of bioactive titania films on titanium metal via anodic oxidation.

PubMed

Cui, X; Kim, H-M; Kawashita, M; Wang, L; Xiong, T; Kokubo, T; Nakamura, T

2009-01-01

To research the crystal structure and surface morphology of anodic films on titanium metal in different electrolytes under various electrochemical conditions and investigate the effect of the crystal structure of the oxide films on apatite-forming ability in simulated body fluid (SBF). Titanium oxide films were prepared using an anodic oxidation method on the surface of titanium metal in four different electrolytes: sulfuric acid, acetic acid, phosphoric acid and sodium sulfate solutions with different voltages for 1 min at room temperature. Anodic films that consisted of rutile and/or anatase phases with porous structures were formed on titanium metal after anodizing in H(2)SO(4) and Na(2)SO(4) electrolytes, while amorphous titania films were produced after anodizing in CH(3)COOH and H(3)PO(4) electrolytes. Titanium metal with the anatase and/or rutile crystal structure films showed excellent apatite-forming ability and produced a compact apatite layer covering all the surface of titanium after soaking in SBF for 7d, but titanium metal with amorphous titania layers was not able to induce apatite formation. The resultant apatite layer formed on titanium metal in SBF could enhance the bonding strength between living tissue and the implant. Anodic oxidation is believed to be an effective method for preparing bioactive titanium metal as an artificial bone substitute even under load-bearing conditions.

Effect of silver thickness on structural, optical and morphological properties of nanocrystalline Ag/NiO thin films

NASA Astrophysics Data System (ADS)

Jalili, S.; Hajakbari, F.; Hojabri, A.

2018-03-01

Silver (Ag) nanolayers were deposited on nickel oxide (NiO) thin films by DC magnetron sputtering. The thickness of Ag layers was in range of 20-80 nm by variation of deposition time between 10 and 40 s. X-ray diffraction results showed that the crystalline properties of the Ag/NiO films improved by increasing the Ag film thickness. Also, atomic force microscopy and field emission scanning electron microscopy images demonstrated that the surface morphology of the films was highly affected by film thickness. The film thickness and the size of particles change by elevating the Ag deposition times. The composition of films was determined by Rutherford back scattering spectroscopy. The transmission of light was gradually reduced by augmentation of Ag films thickness. Furthermore; the optical band gap of the films was also calculated from the transmittance spectra.

Impact of deposition-rate fluctuations on thin-film thickness and uniformity

DOE PAGES

Oliver, Joli B.

2016-11-04

Variations in deposition rate are superimposed on a thin-film–deposition model with planetary rotation to determine the impact on film thickness. Variations in magnitude and frequency of the fluctuations relative to the speed of planetary revolution lead to thickness errors and uniformity variations up to 3%. Sufficiently rapid oscillations in the deposition rate have a negligible impact, while slow oscillations are found to be problematic, leading to changes in the nominal film thickness. Finally, superimposing noise as random fluctuations in the deposition rate has a negligible impact, confirming the importance of any underlying harmonic oscillations in deposition rate or source operation.

Enhanced Self-Biased Magnetoelectric Coupling in Laser-Annealed Pb(Zr,Ti)O3 Thick Film Deposited on Ni Foil.

PubMed

Palneedi, Haribabu; Maurya, Deepam; Geng, Liwei D; Song, Hyun-Cheol; Hwang, Geon-Tae; Peddigari, Mahesh; Annapureddy, Venkateswarlu; Song, Kyung; Oh, Yoon Seok; Yang, Su-Chul; Wang, Yu U; Priya, Shashank; Ryu, Jungho

2018-04-04

Enhanced and self-biased magnetoelectric (ME) coupling is demonstrated in a laminate heterostructure comprising 4 μm-thick Pb(Zr,Ti)O 3 (PZT) film deposited on 50 μm-thick flexible nickel (Ni) foil. A unique fabrication approach, combining room temperature deposition of PZT film by granule spray in vacuum (GSV) process and localized thermal treatment of the film by laser radiation, is utilized. This approach addresses the challenges in integrating ceramic films on metal substrates, which is often limited by the interfacial chemical reactions occurring at high processing temperatures. Laser-induced crystallinity improvement in the PZT thick film led to enhanced dielectric, ferroelectric, and magnetoelectric properties of the PZT/Ni composite. A high self-biased ME response on the order of 3.15 V/cm·Oe was obtained from the laser-annealed PZT/Ni film heterostructure. This value corresponds to a ∼2000% increment from the ME response (0.16 V/cm·Oe) measured from the as-deposited PZT/Ni sample. This result is also one of the highest reported values among similar ME composite systems. The tunability of self-biased ME coupling in PZT/Ni composite has been found to be related to the demagnetization field in Ni, strain mismatch between PZT and Ni, and flexural moment of the laminate structure. The phase-field model provides quantitative insight into these factors and illustrates their contributions toward the observed self-biased ME response. The results present a viable pathway toward designing and integrating ME components for a new generation of miniaturized tunable electronic devices.

Thickness Limit for Alignment of Block Copolymer Films Using Solvent Vapor Annealing with Shear

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Chao; Cavicchi, Kevin A.; Li, Ruipeng

The swelling and deswelling of a cross-linked polydimethylsiloxane (PDMS) pad adhered to a block copolymer (BCP) film during solvent vapor annealing (SVA) provides sufficient shear force to produce highly aligned domains over macroscopic dimensions in thin films. Here in this paper, we examine how far this alignment can propagate through the thickness of a BCP film to understand the limits for efficacy of the SVA-S (SVA with shear) process. Films of cylinder-forming polystyrene-block-polyisoprene-block-polystyrene (SIS) ranging from 100 nm to more than 100 μm are examined using the same processing conditions. The SIS surface in contact with the PDMS is alwaysmore » well-aligned, with Herman’s orientation parameter (S) exceeding 0.9 as determined from AFM micrographs, but the bottom surface in contact with the silicon wafer is not aligned for the thickest films. The average orientation through the film thickness was determined by transmission small-angle X-ray scattering (SAXS), with S decreasing gradually with increasing thickness for SIS films thinner than 24 μm, but S remains >0.8. S precipitously decreases for thicker films. A stop-etch-image approach allows the gradient in orientation through the thickness to be elucidated. The integration of this local orientation profile agrees with the average S obtained from SAXS. These results demonstrate the effective alignment of supported thick BCP films of order 10 μm, which could be useful for BCP coatings for optical applications.« less

Thickness Limit for Alignment of Block Copolymer Films Using Solvent Vapor Annealing with Shear

DOE PAGES

Zhang, Chao; Cavicchi, Kevin A.; Li, Ruipeng; ...

2018-05-23

The swelling and deswelling of a cross-linked polydimethylsiloxane (PDMS) pad adhered to a block copolymer (BCP) film during solvent vapor annealing (SVA) provides sufficient shear force to produce highly aligned domains over macroscopic dimensions in thin films. Here in this paper, we examine how far this alignment can propagate through the thickness of a BCP film to understand the limits for efficacy of the SVA-S (SVA with shear) process. Films of cylinder-forming polystyrene-block-polyisoprene-block-polystyrene (SIS) ranging from 100 nm to more than 100 μm are examined using the same processing conditions. The SIS surface in contact with the PDMS is alwaysmore » well-aligned, with Herman’s orientation parameter (S) exceeding 0.9 as determined from AFM micrographs, but the bottom surface in contact with the silicon wafer is not aligned for the thickest films. The average orientation through the film thickness was determined by transmission small-angle X-ray scattering (SAXS), with S decreasing gradually with increasing thickness for SIS films thinner than 24 μm, but S remains >0.8. S precipitously decreases for thicker films. A stop-etch-image approach allows the gradient in orientation through the thickness to be elucidated. The integration of this local orientation profile agrees with the average S obtained from SAXS. These results demonstrate the effective alignment of supported thick BCP films of order 10 μm, which could be useful for BCP coatings for optical applications.« less

FEM Modeling of In-Plane Stress Distribution in Thick Brittle Coatings/Films on Ductile Substrates Subjected to Tensile Stress to Determine Interfacial Strength.

PubMed

Wang, Kaishi; Zhang, Fangzhou; Bordia, Rajendra K

2018-03-27

The ceramic-metal interface is present in various material structures and devices that are vulnerable to failures, like cracking, which are typically due to their incompatible properties, e.g., thermal expansion mismatch. In failure of these multilayer systems, interfacial shear strength is a good measure of the robustness of interfaces, especially for planar films. There is a widely-used shear lag model and method by Agrawal and Raj to analyse and measure the interfacial shear strength of thin brittle film on ductile substrates. The use of this classical model for a type of polymer derived ceramic coatings (thickness ~18 μm) on steel substrate leads to high values of interfacial shear strength. Here, we present finite element simulations for such a coating system when it is subjected to in-plane tension. Results show that the in-plane stresses in the coating are non-uniform, i.e., varying across the thickness of the film. Therefore, they do not meet one of the basic assumptions of the classical model: uniform in-plane stress. Furthermore, effects of three significant parameters, film thickness, crack spacing, and Young's modulus, on the in-plane stress distribution have also been investigated. 'Thickness-averaged In-plane Stress' (TIS), a new failure criterion, is proposed for estimating the interfacial shear strength, which leads to a more realistic estimation of the tensile strength and interfacial shear strength of thick brittle films/coatings on ductile substrates.

FEM Modeling of In-Plane Stress Distribution in Thick Brittle Coatings/Films on Ductile Substrates Subjected to Tensile Stress to Determine Interfacial Strength

PubMed Central

Zhang, Fangzhou; Bordia, Rajendra K.

2018-01-01

The ceramic-metal interface is present in various material structures and devices that are vulnerable to failures, like cracking, which are typically due to their incompatible properties, e.g., thermal expansion mismatch. In failure of these multilayer systems, interfacial shear strength is a good measure of the robustness of interfaces, especially for planar films. There is a widely-used shear lag model and method by Agrawal and Raj to analyse and measure the interfacial shear strength of thin brittle film on ductile substrates. The use of this classical model for a type of polymer derived ceramic coatings (thickness ~18 μm) on steel substrate leads to high values of interfacial shear strength. Here, we present finite element simulations for such a coating system when it is subjected to in-plane tension. Results show that the in-plane stresses in the coating are non-uniform, i.e., varying across the thickness of the film. Therefore, they do not meet one of the basic assumptions of the classical model: uniform in-plane stress. Furthermore, effects of three significant parameters, film thickness, crack spacing, and Young’s modulus, on the in-plane stress distribution have also been investigated. ‘Thickness-averaged In-plane Stress’ (TIS), a new failure criterion, is proposed for estimating the interfacial shear strength, which leads to a more realistic estimation of the tensile strength and interfacial shear strength of thick brittle films/coatings on ductile substrates. PMID:29584647

Synthesis, integration, and characterization of metal oxide films as alternative gate dielectric materials

NASA Astrophysics Data System (ADS)

Lin, You-Sheng

ZrO2 and HfO2 were investigated in this study to replace SiO2 as the potential gate dielectric materials in metal-oxide-semiconductor field effect transistors. ZrO2 and HfO2 films were deposited on p-type Si (100) wafers by an atomic layer chemical vapor deposition (ALCVD) process using zirconium (IV) t-butoxide and hafnium (IV) t-butoxide as the metal precursors, respectively. Oxygen was used alternatively with these metal alkoxide precursors into the reactor with purging and evacuation in between. The as-deposited ZrO2 and HfO2 films were stoichiometric and uniform based on X-ray photoemission spectroscopy and ellipsometry measurements. X-ray diffraction analysis indicated that the deposited films were amorphous, however, the high-resolution transmission electron microscopy showed an interfacial layer formation on the silicon substrate. Time-of-flight secondary ion mass spectrometry and medium energy ion scattering analysis showed significant intermixing between metal oxides and Si, indicating the formation of metal silicates, which were confirmed by their chemical etching resistance in HF solutions. The thermal stability of ZrO2 and HfO2 thin films on silicon was examined by monitoring their decomposition temperatures in ultra-high vacuum, using in-situ synchrotron radiation ultra-violet photoemission spectroscopy. The as-deposited ZrO2 and HfO2 thin films were thermally stable up to 880°C and 950°C in vacuum, respectively. The highest achieveable dielectric constants of as-deposited ZrO 2 and HfO2 were 21 and 24, respectively, which were slightly lower than the reported dielectric constants of bulk ZrO2 and HfO 2. These slight reductions in dielectric constants were attributed to the formation of the interfacial metal silicate layers. Very small hysteresis and interface state density were observed for both metal oxide films. Their leakage currents were a few orders of magnitude lower than that of SiO 2 at the same equivalent oxide thickness. NMOSFETs were

Cr2O3-modified ZnO thick film resistors as LPG sensors.

PubMed

Patil, D R; Patil, L A

2009-02-15

Thick films of pure ZnO were obtained by screen-printing technique. Surface functionalized ZnO thick films by Cr(2)O(3) were obtained by dipping pure ZnO thick films into 0.01M aqueous solution of chromium trioxide (CrO(3)). The dipped films were fired at 500 degrees C for 30 min. Upon firing, the CrO(3) would reduce to Cr(2)O(3). Cr(2)O(3)-activated (0.47 mass%) ZnO thick films resulted in LPG sensor. Upon exposure to 100 ppm LPG, the barrier height between Cr(2)O(3) and ZnO grains decreases markedly, leading to a drastic decrease in resistance. The sensor was found to sense LPG at 350 degrees C and no cross sensitivity was observed to other hazardous, polluting and inflammable gases. The quick response ( approximately 18s) and fast recovery ( approximately 42s) are the main features of this sensor. The effects of microstructures and dopant concentrations on the gas sensing performance of the sensor were studied and discussed.

Micro-Machined High-Frequency (80 MHz) PZT Thick Film Linear Arrays

PubMed Central

Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K. Kirk

2010-01-01

This paper presents the development of a micro-machined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT solgel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (−6 dB) of 60%. An insertion loss of −41 dB and adjacent element crosstalk of −21 dB were found at the center frequency. PMID:20889407

Determination of thin hydrodynamic lubricating film thickness using dichromatic interferometry.

PubMed

Guo, L; Wong, P L; Guo, F; Liu, H C

2014-09-10

This paper introduces the application of dichromatic interferometry for the study of hydrodynamic lubrication. In conventional methods, two beams with different colors are projected consecutively on a static object. By contrast, the current method deals with hydrodynamic lubricated contacts under running conditions and two lasers with different colors are projected simultaneously to form interference images. Dichromatic interferometry incorporates the advantages of monochromatic and chromatic interferometry, which are widely used in lubrication research. This new approach was evaluated statically and dynamically by measuring the inclination of static wedge films and the thickness of the hydrodynamic lubricating film under running conditions, respectively. Results show that dichromatic interferometry can facilitate real-time determination of lubricating film thickness and is well suited for the study of transient or dynamic lubricating problems.

A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface

NASA Astrophysics Data System (ADS)

Galmed, A. H.; Kassem, A. K.; von Bergmann, H.; Harith, M. A.

2011-01-01

Metals and metal alloys are usually employed as interconnections to guide electrical signals between components into the very large scale integrated (VLSI) devices. These devices demand higher complexity, better performance and lower cost. Thin film is a common geometry for these metallic applications, requiring a substrate for rigidity. Accurate depth profile analysis of coatings is becoming increasingly important with expanding industrial use in technological fields. A number of articles devoted to LIBS applications for depth-resolved analysis have been published in recent years. In the present work, we are studying the ability of femtosecond LIBS to make depth profiling for a Ti thin film of thickness 213 nm deposited onto a silicon (100) substrate before and after thermal annealing. The measurements revealed that an average ablation rates of 15 nm per pulse have been achieved. The thin film was examined using X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM), while the formation of the interface was examined using Rutherford Back Scattering (RBS) before and after annealing. To verify the depth profiling results, a theoretical simulation model is presented that gave a very good agreement with the experimental results.

Effect of Temperature on Film Thickness of Two Types of Commonly used Luting Cements.

PubMed

Kumar, M Praveen; Priyadarshini, Reddy; Kumar, Yasangi M; Priya, K Shanthi; Chunchuvyshnavi, Chunchuvyshnavi; Yerrapragada, Harika

2017-12-01

The aim of this study is to evaluate the effect of temperature change on film thickness of both types of cements. Totally, 60 samples were prepared with 10 in each subgroup, thus comprising 30 in each group. Materials tested were glass ionomer cement (GIC) type I and zinc phosphate type I. Samples were manipulated with manufacturer's instructions and tested according to American Dental Association (ADA) guidelines. The mean values of film thickness were recorded for both groups I and II. In intragroup comparison of group 1, subgroup III (26.560 ± 0.489 urn) was found to have the highest film thickness followed by subgroup II (24.182 ± 0.576 urn) and the lowest in subgroup I (20.209 ± 0.493 urn). In intragroup comparison of group II, the film thickness recorded in subgroup III (25.215 ± 0.661 urn) was the highest followed by subgroup II (21.471 ± 0.771 urn) and the least in subgroup I (17.951 ± 0.654 urn; p < 0.01). In intergroup comparison of groups I and II, group II (21.545 ± 0.841) was found to have less film thickness than group I (23.650 ± 0.271). The results were found to be statistically significant (p < 0.01). Both zinc phosphate and GICs can be used satisfactorily for luting purpose. The temperature fluctuations have a direct influence on the film thickness. Zinc phosphate has less film thickness than GIC. Zinc phosphate should be preferred over GIC in clinical practice, and more stress should be given in mechanical preparation of crowns for better retentive quality of prosthesis.

In vivo tear film thickness measurement and tear film dynamics visualization using spectral domain OCT and an efficient delay estimator

NASA Astrophysics Data System (ADS)

Aranha dos Santos, Valentin; Schmetterer, Leopold; Gröschl, Martin; Garhofer, Gerhard; Werkmeister, René M.

2016-03-01

Dry eye syndrome is a highly prevalent disease of the ocular surface characterized by an instability of the tear film. Traditional methods used for the evaluation of tear film stability are invasive or show limited repeatability. Here we propose a new noninvasive approach to measure tear film thickness using an efficient delay estimator and ultrahigh resolution spectral domain OCT. Silicon wafer phantoms with layers of known thickness and group index were used to validate the estimator-based thickness measurement. A theoretical analysis of the fundamental limit of the precision of the estimator is presented and the analytical expression of the Cramér-Rao lower bound (CRLB), which is the minimum variance that may be achieved by any unbiased estimator, is derived. The performance of the estimator against noise was investigated using simulations. We found that the proposed estimator reaches the CRLB associated with the OCT amplitude signal. The technique was applied in vivo in healthy subjects and dry eye patients. Series of tear film thickness maps were generated, allowing for the visualization of tear film dynamics. Our results show that the central tear film thickness precisely measured in vivo with a coefficient of variation of about 0.65% and that repeatable tear film dynamics can be observed. The presented method has the potential of being an alternative to breakup time measurements (BUT) and could be used in clinical setting to study patients with dry eye disease and monitor their treatments.

Scaling analysis of field-tuned superconductor-insulator transition in two-dimensional tantalum thin films.

PubMed

Park, Sungyu; Shin, Junghyun; Kim, Eunseong

2017-02-20

The superconductor-insulator (SI) transition in two-dimensional Ta thin films is investigated by controlling both film thickness and magnetic field. An intriguing metallic phase appears between a superconducting and an insulating phase within a range of film thickness and magnetic field. The temperature and electric field scaling analyses are performed to investigate the nature of the SI transition in the thickness-tuned metallic and superconducting samples. The critical exponents product of νz obtained from the temperature scaling analysis is found to be approximately 0.67 in the entire range of film thickness. On the other hand, an apparent discrepancy is measured in the product of ν(z + 1) by the electric filed analysis. The product values are found to be about 1.37 for the superconducting films and about 1.86 for the metallic films respectively. We find that the discrepancy is the direct consequence of electron heating that introduces additional dissipation channels in the metallic Ta films.

Thickness driven spin reorientation transition of epitaxial LaCrO3 films

NASA Astrophysics Data System (ADS)

Park, Junho; Kim, Dong-Hwan; Lee, Doopyo; Ko, Kyung-Tae; Hyun Song, Jong; Kim, Jae-Young; Koo, Tae-Yeong; Lee, Seung Ran; Park, Jae-Hoon

2018-03-01

We grew fully strained epitaxial LaCrO3 (LCO) films on SrTiO3(001) under layer-by-layer control up to the film thickness of t = 130 nm using a pulsed laser deposition method. The spin axis of the antiferromagnetic LCO film was systematically examined as a function of t by using Cr L2,3-edge x-ray magnetic linear dichroism (XMLD). The XMLD results manifest a spin reorientation transition (SRT) across a transition thickness of tT ˜ 60 nm. This SRT is well explained in terms of two competing magnetic anisotropy energies of the surface/interface (KS) and the LCO film itself (KV).

Low-temperature technique for thick film resist stabilization and curing

NASA Astrophysics Data System (ADS)

Minter, Jason P.; Wong, Selmer S.; Marlowe, Trey; Ross, Matthew F.; Narcy, Mark E.; Livesay, William R.

1999-06-01

For a range of thick film photoresist applications, including MeV ion implant processing, thin film head manufacturing, and microelectromechanical systems processing, there is a need for a low-temperature method for resist stabilization and curing. Traditional methods of stabilizing or curing resist films have relied on thermal cycling, which may not be desirable due to device temperature limitations or thermally-induced distortion of the resist features.

Mechanisms of weak thickness dependence of the critical current density in strong-pinning ex situ metal organic-deposition-route YBa2Cu3O7-x coated conductors

NASA Astrophysics Data System (ADS)

Kim, S. I.; Gurevich, A.; Song, X.; Li, X.; Zhang, W.; Kodenkandath, T.; Rupich, M. W.; Holesinger, T. G.; Larbalestier, D. C.

2006-09-01

We report on the thickness dependence of the superconducting characteristics including critical current Ic, critical current density Jc, transition temperature Tc, irreversibility field Hirr, bulk pinning force plot Fp(H), and normal state resistivity curve ρ(T) measured after successive ion milling of ~1 µm thick high-Ic YBa2Cu3O7-x films made by an ex situ metal-organic deposition process on Ni-W rolling-assisted biaxially textured substrates (RABiTSTM). In contrast to many recent data, mostly on in situ pulsed laser deposition (PLD) films, which show strong depression of Jc with increasing film thickness t, our films exhibit only a weak dependence of Jc on t. The two better textured samples had full cross-section average Jc,avg (77 K, 0 T) ~4 MA cm-2 near the buffer layer interface and ~3 MA cm-2 at full thickness, despite significant current blocking due to ~30% porosity in the film. Taking account of the thickness dependence of the porosity, we estimate that the local, vortex-pinning current density is essentially independent of thickness, while accounting for the additional current-blocking effects of grain boundaries leads to local, vortex-pinning Jc values well above 5 MA cm-2. Such high local Jc values are produced by strong three-dimensional vortex pinning which subdivides vortex lines into weakly coupled segments much shorter than the film thickness.

Study optoelectronic properties for polymer composite thick film

NASA Astrophysics Data System (ADS)

Jobayr, Mahmood Radhi; Al Razak, Ali Hussein Abd; Mahdi, Shatha H.; Fadhil, Rihab Nassr

2018-05-01

Coupling the epoxy with cadmium oxide particles are important for optical properties that may be affected by various mixing proportions. The aim of this experimental study was to evaluate the effect of different mixing proportions on these properties of reinforced epoxy with cadmium oxide particles. The ultrasonic techniques were used to mix and prepared samples of composites. The surfaces topographic of the 50 µm thick reinforced epoxy films were studied using atomic force microscopy (AFM) and microscopy technique (FTIR) Spectroscopy. AFM imaging and quantitative characterization of the films showed that for all samples the root mean square of the surface roughness increases monotonically with increasing the CdO concentrations (from 0% to 15%). The observed effects of CdO concentrations on surface roughness can be explained by two things: the first reason is that the atoms of additives are combined with the original material to form a new compound that is smoother, more homogeneity and smaller in particle size. The second reason is due to high mixing due to ultrasonic mixing. It is clear also, AFM examination of the prepared samples of reinforced epoxy resin shown that topographical contrast and the identification of small structural details critically depend on hardness of epoxy resin, which in turn depended on the ratio of material (CdO) added. We show that the AFM imaging of the films showed that the mean diameter (104.8nm) of films for all of the samples decreased from 135.50 nm to 83.20 nm with the increase of CdO concentrations.

Optical Thin Film Thickness Measurement for the Single Atom Microscope

NASA Astrophysics Data System (ADS)

Nelson, Courtney; Frisbie, Dustin; Singh, Jaideep; Spinlab Team

2017-09-01

The Single Atom Microscope Project proposes an efficient, selective, and sensitive method to measure the 1022Ne+24 He ->1225 Mg + n reaction. This rare nuclear reaction is a source of neutrons for heavy element development through the slow neutron capture process. This method embeds Magnesium atoms in a solid neon film. The Magnesium atoms exhibit a shifted fluorescence spectrum allowing for the detection of individual fluorescence photons against the excitation light background. Currently, Ytterbium is used in place of Magnesium-25 because it has been more thoroughly studied than Magnesium and we expect it to have a brighter signal. To identify the signal emitted from the Ytterbium atoms, we need to quantify the amount of signal and background per atom in the neon film. We need to know the film thickness to find the number of atoms in the film to determine the amount of light emitted per atom. In preparation for the neon film measurement, I constructed an experiment to advance the understanding of what is required to optically measure a thin film by using a cover glass slide in place of the thin film. This preliminary experiment has determined a measurement method for finding the thickness of a neon thin film on a sapphire substrate. This work is supported by Michigan State University, U.S. National Science Foundation under Grant Number 1654610, and U.S. NSF REU.

Fabrication of large diffractive optical elements in thick film on a concave lens surface.

PubMed

Xie, Yongjun; Lu, Zhenwu; Li, Fengyou

2003-05-05

We demonstrate experimentally the technique of fabricating large diffractive optical elements (DOEs) in thick film on a concave lens surface (mirrors) with precise alignment by using the strategy of double exposure. We adopt the method of double exposure to overcome the difficulty of processing thick photoresist on a large curved substrate. A uniform thick film with arbitrary thickness on a concave lens can be obtained with this technique. We fabricate a large concentric circular grating with a 10-ìm period on a concave lens surface in film with a thickness of 2.0 ìm after development. It is believed that this technique can also be used to fabricate larger DOEs in thicker film on the concave or convex lens surface with precise alignment. There are other potential applications of this technique, such as fabrication of micro-optoelectromechanical systems (MOEMS) or microelectromechanical systems (MEMS) and fabrication of microlens arrays on a large concave lens surface or convex lens surface with precise alignment.

Process for the preparation of metal-containing nanostructured films

NASA Technical Reports Server (NTRS)

Lu, Yunfeng (Inventor); Wang, Donghai (Inventor)

2006-01-01

Metal-containing nanostructured films are prepared by electrodepositing a metal-containing composition within the pores of a mesoporous silica template to form a metal-containing silica nanocomposite. The nanocomposite is annealed to strengthen the deposited metal-containing composition. The silica is then removed from the nanocomposite, e.g., by dissolving the silica in an etching solution to provide a self-supporting metal-containing nanostructured film. The nanostructured films have a nanowire or nanomesh architecture depending on the pore structure of the mesoporous silica template used to prepare the films.

Tape casting and partial melting of Bi-2212 thick films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buhl, D.; Lang, T.; Heeb, B.

1994-12-31

To produce Bi-2212 thick films with high critical current densities tape casting and partial melting is a promising fabrication method. Bi-2212 powder and organic additives were mixed into a slurry and tape casted onto glass by the doctor blade tape casting process. The films were cut from the green tape and partially molten on Ag foils during heat treatment. We obtained almost single-phase and well-textured films over the whole thickness of 20 {mu}m. The orientation of the (a,b)-plane of the grains were parallel to the substrate with a misalignment of less than 6{degrees}. At 77K/OT a critical current density ofmore » 15`000 A/cm{sup 2} was reached in films of the dimension 1cm x 2cm x 20{mu}m (1{mu}V/cm criterion, resistively measured). At 4K/OT the highest value was 350`000 A/cm{sup 2} (1nV/cm criterion, magnetically measured).« less

Tape casting and partial melting of Bi-2212 thick films

NASA Technical Reports Server (NTRS)

Buhl, D.; Lang, TH.; Heeb, B.; Gauckler, L. J.

1995-01-01

To produce Bi-2212 thick films with high critical current densities tape casting and partial melting is a promising fabrication method. Bi-2212 powder and organic additives were mixed into a slurry and tape casted onto glass by the doctor blade tape casting process. The films were cut from the green tape and partially molten on Ag foils during heat treatment. We obtained almost single-phase and well-textured films over the whole thickness of 20 microns. The orientation of the (a,b)-plane of the grains was parallel to the substrate with a misalignment of less than 6 deg. At 77 K/0T a critical current density of 15, 000 A/sq cm was reached in films of the dimension 1 cm x 2 cm x 20 microns (1 micron V/cm criterion, resistively measured). At 4 K/0T the highest value was 350,000 A/sq cm (1 nV/cm criterion, magnetically measured).

Improvement in surface conditions of electroplated Fe-Pt thick-film magnets

NASA Astrophysics Data System (ADS)

Yanai, T.; Honda, J.; Hamamura, R.; Omagari, Y.; Yamada, H.; Fujita, N.; Takashima, K.; Nakano, M.; Fukunaga, H.

2018-05-01

Fe-Pt thick-films were electroplated on Ta, Ti, Co, Ni, and Cu plates (substrates) using a direct current, and the surface morphology, the magnetic properties, and the crystal structure of the films were evaluated. The films plated on the Co, Ni, and Cu substrates showed much smooth surface compared with those for the Ta and Ti ones, and we confirmed that the Cu plate was the most attractive substrate due to very small cracks after an annealing for L10 ordering. High coercivity (>800 kA/m) for the Cu substrate is almost the same as that for our previous study in which we employed the Ta substrate, and we found that the Cu plate is a hopeful substrate to improve the surface conditions of electroplated Fe-Pt thick-film magnets.

All-back-Schottky-contact thin-film photovoltaics

NASA Astrophysics Data System (ADS)

Nardone, Marco

2016-02-01

The concept of All-Back-Schottky-Contact (ABSC) thin-film photovoltaic (TFPV) devices is introduced and evaluated using 2D numerical simulation. Reach-through Schottky junctions due to two metals of different work functions in an alternating, side-by-side pattern along the non-illuminated side generate the requisite built-in field. It is shown that our simulation method quantitatively describes existing data for a recently demonstrated heterojunction thin-film cell with interdigitated back contacts (IBCs) of one metal type. That model is extended to investigate the performance of ABSC devices with bimetallic IBCs within a pertinent parameter space. Our calculations indicate that 20% efficiency is achievable with micron-scale features and sufficient surface passivation. Bimetallic, micron-scale IBCs are readily fabricated using photo-lithographic techniques and the ABSC design allows for optically transparent surface passivation layers that need not be electrically conductive. The key advantages of the ABSC-TFPV architecture are that window layers, buffer layers, heterojunctions, and module scribing are not required because both contacts are located on the back of the device.

Relation between film thickness and surface doping of MoS2 based field effect transistors

NASA Astrophysics Data System (ADS)

Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

2018-05-01

Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

Film thickness measurement for spiral groove and Rayleigh step lift pad self-acting face seals

NASA Technical Reports Server (NTRS)

Dirusso, E.

1982-01-01

One Rayleigh step lift pad and three spiral groove self-acting face seal configurations were tested to measure film thickness and frictional torque as a function of shaft speed. The seals were tested at a constant face load of 73 N (16.4 lb) with ambient air at room temperature and atmospheric pressure as the fluid medium. The test speed range was from 7000 to 17,000 rpm. The measured film thickness was compared with theoretical data from mathematical models. The mathematical models overpredicted the measured film thickness at the lower speeds of the test speed range and underpredicted the measured film thickness at the higher speeds of the test speed range.

Minimum film thickness in elliptical contacts for different regimes of fluid-film lubrication

NASA Technical Reports Server (NTRS)

Hamrock, B. J.; Dowson, D.

1978-01-01

The film-parameter equations are provided for four fluid-film lubrication regimes found in elliptical contacts. These regimes are isoviscous-rigid; viscous-rigid; elastohydrodynamic of low-elastic-modulus materials, or isoviscous-elastic; and elastohydrodynamic, or viscous-elastic. The influence or lack of influence of elastic and viscous effects is the factor that distinguishes these regimes. The film-parameter equations for the respective regimes come from earlier theoretical studies by the authors on elastohydrodynamic and hydrodynamic lubrication of elliptical conjunctions. These equations are restated and the results are presented as a map of the lubrication regimes, with film-thickness contours on a log-log grid of the viscosity and elasticity parameters for five values of the ellipticity parameter. The results present a complete theoretical film-parameter solution for elliptical contacts in the four lubrication regimes.

Unidirectional magnetoresistance in magnetic thin films with non-uniform thickness

NASA Astrophysics Data System (ADS)

Jia, M. W.; Zhou, C.; Zeng, F. L.; Wu, Y. Z.

2018-05-01

The magnetoresistance (MR) of Co film and Co/Pt bilayers was studied systematically as a function of Co and Pt thickness at room temperature. In the samples with the wedge shape, we found the unidirectional MR which has the characteristics of R (Mz )≠R (-Mz ) with the magnetization normal to the film. The measured unidirectional MR is attributed to the differential anomalous Hall resistance due to the thickness difference at the electrodes for the longitudinal resistance measurements. The unidirectional MR effect in the Co/Pt bilayers can be greatly suppressed by a non-magnetic Cu inserting layer.

Effects of artificially produced defects on film thickness distribution in sliding EHD point contacts

NASA Technical Reports Server (NTRS)

Cusano, C.; Wedeven, L. D.

1981-01-01

The effects of artificially produced dents and grooves on the elastohydrodynamic (EHD) film thickness profile in a sliding point contact were investigated by means of optical interferometry. The defects, formed on the surface of a highly polished ball, were held stationary at various locations within and in the vicinity of the contact region while the disk was rotating. It is shown that the defects, having a geometry similar to what can be expected in practice, can dramatically change the film thickness which exists when no defects are present in or near the contact. This change in film thickness is mainly a function of the position of the defects in the inlet region, the geometry of the defects, the orientation of the defects in the case of grooves, and the depth of the defect relative to the central film thickness.

Quantum transition and decoherence of levitating polaron on helium film thickness under an electromagnetic field

NASA Astrophysics Data System (ADS)

Kenfack, S. C.; Fotue, A. J.; Fobasso, M. F. C.; Djomou, J.-R. D.; Tiotsop, M.; Ngouana, K. S. L.; Fai, L. C.

2017-12-01

We have studied the transition probability and decoherence time of levitating polaron in helium film thickness. By using a variational method of Pekar type, the ground and the first excited states of polaron are calculated above the liquid-helium film placed on the polar substrate. It is shown that the polaron transits from the ground to the excited state in the presence of an external electromagnetic field in the plane. We have seen that, in the helium film, the effects of the magnetic and electric fields on the polaron are opposite. It is also shown that the energy, transition probability and decoherence time of the polaron depend sensitively on the helium film thickness. We found that decoherence time decreases as a function of increasing electron-phonon coupling strength and the helium film thickness. It is seen that the film thickness can be considered as a new confinement in our system and can be adjusted in order to reduce decoherence.

Origin of thickness dependence of structural phase transition temperatures in BiFeO 3 thin films

DOE PAGES

Yang, Yongsoo; Beekman, Christianne; Siemons, Wolter; ...

2016-03-28

In this study, two structural phase transitions are investigated in highly strained BiFeO 3 thin films grown on LaAlO 3 substrates, as a function of film thickness and temperature via synchrotron x-ray diffraction. Both transition temperatures (upon heating: monoclinic MC to monoclinic MA, and MA to tetragonal) decrease as the film becomes thinner. The existence of an interface layer at the film-substrate interface, deduced from half-order peak intensities, contributes to this behavior only for the thinnest samples; at larger thicknesses (above a few nanometers) the temperature dependence can be understood in terms of electrostatic considerations akin to size effects inmore » ferroelectric phase transitions, but observed here for structural phase transitions within the ferroelectric phase and related to the rearrangement rather than the formation of domains. For ultra-thin films, the tetragonal structure is stable at all investigated temperatures (down to 30 K).« less

Influence of Thickness and Interface on the Low-Temperature Enhancement of the Spin Seebeck Effect in YIG Films

DOE PAGES

Guo, Er-Jia; Cramer, Joel; Kehlberger, Andreas; ...

2016-07-27

The temperature-dependent longitudinal spin Seebeck effect (LSSE) in heavy metal (HM)/Y 3Fe 5O 12 (YIG) hybrid structures is investigated as a function of YIG film thickness, magnetic field strength, and different HM detection materials. The LSSE signal shows a large enhancement with reductions in temperature, leading to a pronounced peak at low temperatures. Here we find that the LSSE peak temperature strongly depends on the film thickness as well as on the magnetic field. Our result can be well explained in the framework of magnon-driven LSSE by taking into account the temperature-dependent effective propagation length of thermally excited magnons inmore » the bulk of the material. We further demonstrate that the LSSE peak is significantly shifted by changing the interface coupling to an adjacent detection layer, revealing a more complex behavior beyond the currently discussed bulk effect. By direct microscopic imaging of the interface, we correlate the observed temperature dependence with the interface structure between the YIG and the adjacent metal layer. Finally, our results highlight the role of interface effects on the temperature-dependent LSSE in HM/YIG system, suggesting that the temperature-dependent spin current transparency strikingly relies on the interface conditions.« less

Thin film hydrous metal oxide catalysts

DOEpatents

Dosch, Robert G.; Stephens, Howard P.

1995-01-01

Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

Method and system using power modulation and velocity modulation producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients

DOEpatents

Montcalm, Claude [Livermore, CA; Folta, James Allen [Livermore, CA; Walton, Christopher Charles [Berkeley, CA

2003-12-23

A method and system for determining a source flux modulation recipe for achieving a selected thickness profile of a film to be deposited (e.g., with highly uniform or highly accurate custom graded thickness) over a flat or curved substrate (such as concave or convex optics) by exposing the substrate to a vapor deposition source operated with time-varying flux distribution as a function of time. Preferably, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. Preferably, the method includes the steps of measuring the source flux distribution (using a test piece held stationary while exposed to the source with the source operated at each of a number of different applied power levels), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of source flux modulation recipes, and determining from the predicted film thickness profiles a source flux modulation recipe which is adequate to achieve a predetermined thickness profile. Aspects of the invention include a computer-implemented method employing a graphical user interface to facilitate convenient selection of an optimal or nearly optimal source flux modulation recipe to achieve a desired thickness profile on a substrate. The method enables precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.

Method of producing solution-derived metal oxide thin films

DOEpatents

Boyle, Timothy J.; Ingersoll, David

2000-01-01

A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

[The diagnosis of malaria by the thick film and the QBC: a comparative study of both technics].

PubMed

Cabezos, J; Bada, J L

1993-06-12

The diagnosis of paludism is important because of the severity of the clinical picture caused by Plasmodium falciparum, the increasing number of travellers to endemic zones and the emigration from these zones. A comparative study of the QBC techniques (staining with acridin orange and observation with ultraviolet light) and the thick film with Giemsa staining was carried out. The QBC and thick film were performed parallelly for 17 months in a total of 623 samples pertaining to subjects from endemic zones of paludism (emigrants, immigrants and travellers). Of the 623 samples studied 49 were positive for paludism by both techniques. Ten were positive with only the thick film and six were positive only with QBC. The sensitivity of QBC versus thick film was 83% and specificity 98.9%. The time used to determine diagnosis with the QBC technique ranged from 6 to 12 minutes from withdrawal of the sample, while with the thick film the time spent was more than 2 hours. The cases positive by thick film and negative with QBC corresponded to patients with very low parasitation. The intensity of parasitation was difficult to determine quantitatively by QBC. Although the QBC technique has the advantage of speed it is inexact with respect to the quantification of parasitemia. Moreover, it is less sensitive than the thick film in patient with very low parasitations and cannot thus substitute the thick film.

Effects of particle size distribution in thick film conductors

NASA Technical Reports Server (NTRS)

Vest, R. W.

1983-01-01

Studies of particle size distribution in thick film conductors are discussed. The distribution of particle sizes does have an effect on fired film density but the effect is not always positive. A proper distribution of sizes is necessary, and while the theoretical models can serve as guides to selecting this proper distribution, improved densities can be achieved by empirical variations from the predictions of the models.

Metal insulator transitions in perovskite SrIrO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biswas, Abhijit; Jeong, Yoon Hee, E-mail: yhj@postech.ac.kr; Kim, Ki-Seok

Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite SrIrO{sub 3} thin films, containing a strong spin orbit coupled 5d element Ir, on various substrates such as GdScO{sub 3} (110), DyScO{sub 3} (110), SrTiO{sub 3} (001), and NdGaO{sub 3} (110) with increasing lattice mismatch, in order to carry out a systematic study on the transport properties. We foundmore » that metal insulator transitions can be induced in this system; by either reducing thickness (on best lattice matched substrate) or changing degree of lattice strain (by lattice mismatch between film and substrates) of films. Surprisingly these two pathways seek two distinct types of metal insulator transitions; the former falls into disorder driven Anderson type whereas the latter turns out to be of unconventional Mott-Anderson type with the interplay of disorder and correlation. More interestingly, in the metallic phases of SrIrO{sub 3}, unusual non-Fermi liquid characteristics emerge in resistivity as Δρ ∝ T{sup ε} with ε evolving from 4/5 to 1 to 3/2 with increasing lattice strain. We discuss theoretical implications of these phenomena to shed light on the metal insulator transitions.« less

Method for rapid, controllable growth and thickness, of epitaxial silicon films

DOEpatents

Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

2009-10-13

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

The thickness effect of pre-deposited catalyst film on carbon nanotube growth by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wei, Y. Y.; Eres, Gyula; Lowndes, Douglas H.

2001-03-01

Chemical vapor deposition (CVD) of multi wall carbon nanotubes (MWCNTs) was realized on a substrate with a layer of iron film used as a catalyst. The catalyst film was pre-deposited in an electron-gun evaporator equipped with a movable shutter which partially blocks the beam during the evaporation process to produce a catalyst film with a continuously changing thickness from 0 to 60 nm. This technique creates a growth environment in which the film thickness is the only variable and eliminates sample-to-sample variations, enabling a systematic study of the thickness effect of the catalyst film on CNT growth. After the deposition of the catalyst film, the sample was immediately transferred into a CVD chamber where CNT growth was performed. Using Acetylene (C_2H_2) as a carbon-source gas, at the substrate temperature of around 700^oC, MWCNTs preferentially grow as a dense mat on the thin regions of the catalyst film. Moreover, beyond a certain critical film thickness no tubes were observed. The critical film thickness for CNT growth was found to increase with substrate temperature from 640^oC to 800^oC. There appears to be no strong correlation between the film thickness and the diameter of the tubes. At the substrate temperature of over 900^oC, the deposited carbon formed graphite sheets surrounding the catalyst particles and no CNTs were observed. A plot of the critical thickness of the catalyst film where CNTs start to grow as a function of the substrate temperature has obtained, which can be served as a reference for selecting the growth parameter in MWCNT growth. The significance of these experimental trends is discussed within the framework of the diffusion model for MWCNT growth.

Influence of substrate and film thickness on polymer LIPSS formation

NASA Astrophysics Data System (ADS)

Cui, Jing; Nogales, Aurora; Ezquerra, Tiberio A.; Rebollar, Esther

2017-02-01

Here we focus on the influence of both, substrate and film thickness on polymer Laser Induced Periodic Surface Structures (LIPSS) formation in polymer films. For this aim a morphological description of ripples structures generated on spin-coated polystyrene (PS) films by a linearly polarized laser beam with a wavelength of 266 nm is presented. The influence of different parameters on the quality and characteristics of the formed laser-induced periodic surface structures (LIPSS) was investigated. We found that well-ordered LIPSS are formed either on PS films thinner than 200 nm or thicker than 400 nm supported on silicon substrates as well as on thicker free standing films. However less-ordered ripples are formed on silicon supported films with intermediate thicknesses in the range of 200-380 nm. The effect of the thermal and optical properties of the substrate on the quality of LIPSS was analyzed. Differences observed in the fluence and number of pulses needed for the onset of surface morphological modifications is explained considering two main effects which are: (1) The temperature increase on polymer surface induced by the action of cumulative laser irradiation and (2) The differences in thermal conductivity between the polymer and the substrate which strongly affect the heat dissipation generated by irradiation.

Flexible Thin Metal Film Thermal Sensing System

NASA Technical Reports Server (NTRS)

Thomsen, Donald Laurence (Inventor)

2012-01-01

A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

Valence Band Control of Metal Silicide Films via Stoichiometry.

PubMed

Streller, Frank; Qi, Yubo; Yang, Jing; Mangolini, Filippo; Rappe, Andrew M; Carpick, Robert W

2016-07-07

The unique electronic and mechanical properties of metal silicide films render them interesting for advanced materials in plasmonic devices, batteries, field-emitters, thermoelectric devices, transistors, and nanoelectromechanical switches. However, enabling their use requires precisely controlling their electronic structure. Using platinum silicide (PtxSi) as a model silicide, we demonstrate that the electronic structure of PtxSi thin films (1 ≤ x ≤ 3) can be tuned between metallic and semimetallic by changing the stoichiometry. Increasing the silicon content in PtxSi decreases the carrier density according to valence band X-ray photoelectron spectroscopy and theoretical density of states (DOS) calculations. Among all PtxSi phases, Pt3Si offers the highest DOS due to the modest shift of the Pt5d manifold away from the Fermi edge by only 0.5 eV compared to Pt, rendering it promising for applications. These results, demonstrating tunability of the electronic structure of thin metal silicide films, suggest that metal silicides can be designed to achieve application-specific electronic properties.

Thickness dependent structural, optical and electrical properties of Se85In12Bi3 nanochalcogenide thin films

NASA Astrophysics Data System (ADS)

Tripathi, Ravi P.; Zulfequar, M.; Khan, Shamshad A.

2018-04-01

Our aim is to study the thickness dependent effects on structure, electrical and optical properties of Se85In12Bi3 nanochalcogenide thin films. Bulk alloy of Se85In12Bi3 was synthesized by melt-quenching technique. The amorphous as well as glassy nature of Se85In12Bi3 chalcogenide was confirmed by non-isothermal Differential Scanning Calorimetry (DSC) measurements. The nanochalcogenide thin films of thickness 30, 60 and 90 nm were prepared on glass/Si wafer substrate using Physical Vapour Condensation Technique (PVCT). From XRD studies it was found that thin films have amorphous texture. The surface morphology and particle size of films were studied by Field Emission Scanning Electron Microscope (FESEM). From optical studies, different optical parameters were estimated for Se85In12Bi3 thin films at different thickness. It was found that the absorption coefficient (α) and extinction coefficient (k) increases with photon energy and decreases with film thickness. The optical absorption process followed the rule of indirect transitions and optical band gap were found to be increase with film thickness. The value of Urbach energy (Et) and steepness parameter (σ) were also calculated for different film thickness. For electrical studies, dc-conductivity measurement was done at different temperature and activation energy (ΔEc) were determined and found to be increase with film thickness.

Film Thickness Allowance and Waveguide Length in 3-Layer Unidirectional Magneto-Optical TE-TM Mode Converter

NASA Astrophysics Data System (ADS)

Abe, Masanori; Nakagawa, Hidenobu; Gomi, Manabu; Nomura, Shoichiro

1982-01-01

The film thickness allowance and the waveguide length in a 3-layer (substrate/film/air) magneto-optical unidirectional TE-TM mode converter which utilizes the intrinsic birefringence in an anisotropic material are calculated at λ0{=}1.55 μm. The film material should be gyrotropic in order to make the waveguide length short, and the film thickness allowance is relaxed by reducing the ratio of the dielectric constant of the film to that of the substrate. When the waveguide is made of an isotropic gyrotropic film of YIG deposited on an anisotropic substrate (which may be gyrotropic or not), the restriction on the film thickness can in practice be removed, but this requires precise control of the dielectric constant of the film and the substrate instead.

Composite materials obtained by the ion-plasma sputtering of metal compound coatings on polymer films

NASA Astrophysics Data System (ADS)

Khlebnikov, Nikolai; Polyakov, Evgenii; Borisov, Sergei; Barashev, Nikolai; Biramov, Emir; Maltceva, Anastasia; Vereshchagin, Artem; Khartov, Stas; Voronin, Anton

2016-01-01

In this article, the principle and examples composite materials obtained by deposition of metal compound coatings on polymer film substrates by the ion-plasma sputtering method are presented. A synergistic effect is to obtain the materials with structural properties of the polymer substrate and the surface properties of the metal deposited coatings. The technology of sputtering of TiN coatings of various thicknesses on polyethylene terephthalate films is discussed. The obtained composites are characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and scanning tunneling microscopy (STM) is shown. The examples of application of this method, such as receiving nanocomposite track membranes and flexible transparent electrodes, are considered.

The effect of TiO2 thin film thickness on self-cleaning glass properties

NASA Astrophysics Data System (ADS)

Mufti, Nandang; Laila, Ifa K. R.; Hartatiek; Fuad, Abdulloh

2017-05-01

TiO2 is one of semiconductor materials which are widely used as photocatalyst in the form of a thin film. The TiO2 thin film is prepared by using the spin coating sol-gel method. The researcher prepared TiO2 thin film with 3 coating variations and X-Ray Diffraction characterization, UV-Vis Spectrophotometer, Electron Microscopy Scanning, and examined its hydrophilic and anti-fogging properties. The result of X-Ray Diffraction showed that the phase formed is the anatase on 101crystal field. The Electron Microscopy Scanning images showed that TiO2 thin films had a homogeneous surface with the particle sizes as big as 235 nm, 179 nm, and 137 nm. The thickness of each thin film was 2.06μm, 3.33μm, and 5.20μm. The characterization of UV-Vis Spectrophotometer showed that the greatest absorption to the wavelength of visible light was in the thin film’s thickness of 3 coatings with the band-gap determined by using 3.30 eV, 3.33 eV, and 3.33 eV Plot Tuoc. These results indicated that the rate of absorption would be increased by increasing the thickness of film. The increasing thickness of the thin film makes the film hydrophilic able to be used as an anti-fogging substance.

Determining the refractive index and thickness of thin films from prism coupler measurements

NASA Technical Reports Server (NTRS)

Kirsch, S. T.

1981-01-01

A simple method of determining thin film parameters from mode indices measured using a prism coupler is described. The problem is reduced to doing two least squares straight line fits through measured mode indices vs effective mode number. The slope and y intercept of the line are simply related to the thickness and refractive index of film, respectively. The approach takes into account the correlation between as well as the uncertainty in the individual measurements from all sources of error to give precise error tolerances on the best fit values. Due to the precision of the tolerances, anisotropic films can be identified and characterized.

Thin-Film Phase Plates for Transmission Electron Microscopy Fabricated from Metallic Glasses.

PubMed

Dries, Manuel; Hettler, Simon; Schulze, Tina; Send, Winfried; Müller, Erich; Schneider, Reinhard; Gerthsen, Dagmar; Luo, Yuansu; Samwer, Konrad

2016-10-01

Thin-film phase plates (PPs) have become an interesting tool to enhance the contrast of weak-phase objects in transmission electron microscopy (TEM). The thin film usually consists of amorphous carbon, which suffers from quick degeneration under the intense electron-beam illumination. Recent investigations have focused on the search for alternative materials with an improved material stability. This work presents thin-film PPs fabricated from metallic glass alloys, which are characterized by a high electrical conductivity and an amorphous structure. Thin films of the zirconium-based alloy Zr65.0Al7.5Cu27.5 (ZAC) were fabricated and their phase-shifting properties were evaluated. The ZAC film was investigated by different TEM techniques, which reveal beneficial properties compared with amorphous carbon PPs. Particularly favorable is the small probability for inelastic plasmon scattering, which results from the combined effect of a moderate inelastic mean free path and a reduced film thickness due to a high mean inner potential. Small probability plasmon scattering improves contrast transfer at high spatial frequencies, which makes the ZAC alloy a promising material for PP fabrication.

[Factors influencing the measurement of tear film lipid layer thickness with interferometry].

PubMed

Finis, D; Pischel, N; Borrelli, M; Schrader, S; Geerling, G

2014-06-01

The quantitative measurement of the tear film lipid layer thickness is a relatively new and promising method. However, so far it has not been investigated whether there is a diurnal or a day to day variability and whether certain factors are confounding the measurement of the lipid layer thickness. In three different experimental settings, 10 subjects without known sicca syndrome were examined at three different time points on one day, on three different days and before and after therapeutic expression of the Meibomian glands. As a comparison, the parameters tear film break-up time, tear meniscus height, diagnostic expression of the Meibomian glands and subjective symptoms, determined using the OSDI (ocular surface disease index) questionnaire, were measured. The results of the study showed a smaller variation of the lipid layer thickness measurements during the day and from day to day compared to the tear film break-up time. The expression of the Meibomian glands significantly increased the lipid layer thickness. There was a correlation between the baseline values of tear film break-up time and the lipid layer thickness. Our data showed that the lipid layer thickness as measured with the Lipiview® interferometer appears to be a relatively constant parameter over time. In addition, the expression of the Meibomian glands could be identified as a potential confounding factor. In this study we included only healthy subjects without known sicca syndrome. For the future our findings need to be validated in dry eye patients. Georg Thieme Verlag KG Stuttgart · New York.

Effects of coating thickness on high power metal coated fibre lasers

NASA Astrophysics Data System (ADS)

Daniel, Jae M. O.; Simakov, Nikita; Hemming, Alexander; Clarkson, W. Andrew; Haub, John

2017-03-01

We investigate the effects of coating thickness on the scattering losses of metal coated active fibre. A range of low numerical aperture metal coated optical fibres are placed in etchant solutions whilst measuring propagation loss as a function of time. By utilising concurrent coating diameter measurements, we are able to correlate propagation losses with coating thickness. Experimentally we find a monotonic dependence on coating thickness and scattering loss. We present the results of this work, providing useful parameters for high power metal coated fibre laser designs.

Synthesis and characterization of thick PZT films via sol-gel dip coating method

NASA Astrophysics Data System (ADS)

Shakeri, Amid; Abdizadeh, Hossein; Golobostanfard, Mohammad Reza

2014-09-01

Thick films of lead zirconate titanate (PZT) offer possibilities for micro-electro-mechanical systems such as high frequency ultrasonic transducers. In this paper, crack-free thick films of PZT have been prepared up to 45 μm thickness via modified sol-gel dip coating method. In this procedure, acetic acid-alcoholic based sol is used by applying diethanolamine (DEA) and deionized water as additives. The effects of DEA and water on the crystal structure and surface morphology of the films are investigated. The mechanisms of acetic acid and DEA complexations are introduced by using FTIR spectrometer which illustrates suitable substitution of complexing agents with alkoxide groups. DEA/(Ti + Zr) = 0.5 or water/(Ti + Zr) = 0.5 are determined as the optimum molar ratio of additives, which lead to the formation of almost pure perovskite phase with the tetragonal lattice parameters of ct = 4.16 Ǻ and at = 4.02 Ǻ and a distortion of 2%. Values of remanent polarization and dielectric constant of 7.8 μC cm-2 and 1630 were obtained for 45 μm thick films, respectively.

The Effect of Thickness of ZnO Thin Films on Hydrophobic Self-Cleaning Properties

NASA Astrophysics Data System (ADS)

Mufti, N.; Arista, D.; Diantoro, M.; Fuad, A.; Taufiq, A.; Sunaryono

2017-05-01

Glass coating can be conducted by using ZnO-photocatalyst based semiconductor material since it is preeminent in decomposing organics compound and dangerous bacteria which often contaminates the environment. If there are dirt containing organics compound on the glass, the ZnO photocatalyst coat can be applied as self-cleaning, usually called self-cleaning glass. It depends on the coating thickness which can be controlled by setting the speed of spin coating. In this research, the various rotating speeds of spin coating were conducted at 2000 rpm, 3000 rpm, and 4000 rpm to control the thickness. The raw materials used in this research were Zn(CH3COOH)2.2H2O (PA 99,5%), Ethylene glycol, Diethanolamine (PA 99%), Isopropanol Alkohol, Glycerol, and Ashton. Synthesis methods used were sol-gel prior to spin coating technic were applied. The results of the film were characterized by using SEM, XRD, and UV-Spectrophotometer. The crystal structure was analyzed by using Highscore plus and GSAS software, the size crystal was calculated by using Scherrer equation, a contact angle with ImageJ software. It was shown that ZnO thin film had been successfully synthesized with the crystal size around 21 nm up to 26 nm. The absorption value is higher due to the increasing of coat thickness with bandgap ± 3.2 eV. The test result of hydrophobic and hydrophilic characteristics show that all samples of ZnO thin film with the thickness ± 1.050 μm, ± 0.450 μm, ± 0.250 μm can be applied as self-cleaning glass. The best result was gained with the thickness of thin film ± 1.050 μm.

Electrical four-point probing of spherical metallic thin films coated onto micron sized polymer particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pettersen, Sigurd R., E-mail: sigurd.r.pettersen@ntnu.no, E-mail: jianying.he@ntnu.no; Stokkeland, August Emil; Zhang, Zhiliang

Micron-sized metal-coated polymer spheres are frequently used as filler particles in conductive composites for electronic interconnects. However, the intrinsic electrical resistivity of the spherical thin films has not been attainable due to deficiency in methods that eliminate the effect of contact resistance. In this work, a four-point probing method using vacuum compatible piezo-actuated micro robots was developed to directly investigate the electric properties of individual silver-coated spheres under real-time observation in a scanning electron microscope. Poly(methyl methacrylate) spheres with a diameter of 30 μm and four different film thicknesses (270 nm, 150 nm, 100 nm, and 60 nm) were investigated. By multiplying the experimental resultsmore » with geometrical correction factors obtained using finite element models, the resistivities of the thin films were estimated for the four thicknesses. These were higher than the resistivity of bulk silver.« less

Experimental study of the polymer powder film thickness uniformity produced by the corona discharge

NASA Astrophysics Data System (ADS)

Fazlyyyakhmatov, Marsel

2017-01-01

The results of an experimental study of the polymer powder film thickness uniformity are presented. Polymer powder films are produced by the electrostatic field of corona discharge. Epoxy and epoxy-polyester powder films with thickness in the range of 30-120 microns are studied. Experimentally confirmed possibility of using these coatings as protective matching layer of piezoceramic transducers at frequencies of 0.5-15 MHz.

Mechanical behaviour of metallic thin films on polymeric substrates and the effect of ion beam assistance on crack propagation

DOE Office of Scientific and Technical Information (OSTI.GOV)

George, M.; Coupeau, C.; Colin, J.

2005-01-10

The mechanisms of crack propagation in metallic films on polymeric substrates have been studied through in situ atomic force microscopy observations of thin films under tensile stresses and finite element stress calculations. Two series of films - ones deposited with ion beam assistance, the others without - have been investigated. The observations and stress calculations show that ion beam assistance can change drastically the propagation of cracks in coated materials: by improving the adhesion film/substrate, it slows down the delamination process, but in the same time enhances the cracks growth in the thickness of the material.

Preparation of carbon-free TEM microgrids by metal sputtering.

PubMed

Janbroers, S; de Kruijff, T R; Xu, Q; Kooyman, P J; Zandbergen, H W

2009-08-01

A new method for preparing carbon-free, temperature-stable Transmission Electron Microscope (TEM) grids is presented. An 80% Au/20% Pd metal film is deposited onto a 'holey' microgrid carbon supported on standard mixed-mesh Au TEM grids. Subsequently, the carbon film is selectively removed using plasma cleaning. In this way, an all-metal TEM film is made containing the 'same' microgrid as the original carbon film. Although electron transparency of the foil is reduced significantly, the open areas for TEM inspection of material over these areas are maintained. The metal foil can be prepared with various thicknesses and ensures good electrical conductivity. The new Au/Pd grids are stable to at least 775K under vacuum conditions.

High Precision Metal Thin Film Liftoff Technique

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Patel, Amil A. (Inventor)

2015-01-01

A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.

Through-thickness thermal conductivity enhancement of graphite film/epoxy composite via short duration acidizing modification

NASA Astrophysics Data System (ADS)

Wang, Han; Wang, Shaokai; Lu, Weibang; Li, Min; Gu, Yizhou; Zhang, Yongyi; Zhang, Zuoguang

2018-06-01

Graphite films have excellent in-plane thermal conductivity but extremely low through-thickness thermal conductivity because of their intrinsic inter-layer spaces. To improve the inter-layer heat transfer of graphite films, we developed a simple interfacial modification with a short duration mixed-acid treatment. The effects of the mixture ratio of sulfuric and nitric acids and treatment time on the through-thickness thermal properties of graphite films were studied. The modification increased the through-thickness thermal conductivity by 27% and 42% for the graphite film and its composite, respectively. X-ray photoelectron spectroscopy, X-ray powder diffraction, and scanning electron microscopy results indicated that the acidification process had two competing effects: the positive contribution made by the enhanced interaction between the graphite layers induced by the functional groups and the negative effect from the destruction of the graphite layers. As a result, an optimal acidification method was found to be sulfuric/nitric acid treatment with a mixture ratio of 3:1 for 15 min. The resultant through-thickness thermal conductivity of the graphite film could be improved to 0.674 W/mK, and the corresponding graphite/epoxy composite shows a through-thickness thermal conductivity of 0.587 W/mK. This method can be directly used for graphite films and their composite fabrication to improve through-thickness thermal conductivity.

Study of all-angle negative refraction of light in metal-dielectric-metal multilayered structures based on generalized formulas of reflection and refraction

NASA Astrophysics Data System (ADS)

Chen, Jiangwei; Liu, Jun; Xu, Weidong

2017-09-01

In this paper, refraction behaviors of light in both metal single-layered film and metal-dielectric-metal multilayered films are investigated based on the generalized formulas of reflection and refraction. The obtained results, especially, dependence of power refractive index on incident angles for a light beam traveling through a metal-dielectric-metal multilayered structure, are well consistent with the experimental observations. Our work may offer a new angle of view to understand the all-angle negative refraction of light in metal-dielectric-metal multilayered structures, and provide a convenient approach to optimize the devised design and address the issue on making the perfect lens.

Tuning relaxation dynamics and mechanical properties of polymer films of identical thickness

NASA Astrophysics Data System (ADS)

Kchaou, Marwa; Alcouffe, Pierre; Chandran, Sivasurender; Cassagnau, Philippe; Reiter, Günter; Al Akhrass, Samer

2018-03-01

Using dewetting as a characterization tool, we demonstrate that physical properties of thin polymer films can be regulated and tuned by employing variable processing conditions. For different molecular weights, the variable behavior of polystyrene films of identical thickness, prepared along systematically altered pathways, became predictable through a single parameter P , defined as the ratio of time required over time available for the equilibration of polymers. In particular, preparation-induced residual stresses, the corresponding relaxation times as well as the rupture probability of such films (of identical thickness) varied by orders of magnitude following scaling relations with P . Our experimental findings suggest that we can predictably enhance properties and hence maximize the performance of thin polymer films via appropriately chosen processing conditions.

Enhanced sensitivity to dielectric function and thickness of absorbing thin films by combining total internal reflection ellipsometry with standard ellipsometry and reflectometry

NASA Astrophysics Data System (ADS)

Lizana, A.; Foldyna, M.; Stchakovsky, M.; Georges, B.; Nicolas, D.; Garcia-Caurel, E.

2013-03-01

High sensitivity of spectroscopic ellipsometry and reflectometry for the characterization of thin films can strongly decrease when layers, typically metals, absorb a significant fraction of the light. In this paper, we propose a solution to overcome this drawback using total internal reflection ellipsometry (TIRE) and exciting a surface longitudinal wave: a plasmon-polariton. As in the attenuated total reflectance technique, TIRE exploits a minimum in the intensity of reflected transversal magnetic (TM) polarized light and enhances the sensitivity of standard methods to thicknesses of absorbing films. Samples under study were stacks of three films, ZnO : Al/Ag/ZnO : Al, deposited on glass substrates. The thickness of the silver layer varied from sample to sample. We performed measurements with a UV-visible phase-modulated ellipsometer, an IR Mueller ellipsometer and a UV-NIR reflectometer. We used the variance-covariance formalism to evaluate the sensitivity of the ellipsometric data to different parameters of the optical model. Results have shown that using TIRE doubled the sensitivity to the silver layer thickness when compared with the standard ellipsometry. Moreover, the thickness of the ZnO : Al layer below the silver layer can be reliably quantified, unlike for the fit of the standard ellipsometry data, which is limited by the absorption of the silver layer.

Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells.

PubMed

Yuan, Zhongcheng; Yang, Yingguo; Wu, Zhongwei; Bai, Sai; Xu, Weidong; Song, Tao; Gao, Xingyu; Gao, Feng; Sun, Baoquan

2016-12-21

Device performance of organometal halide perovskite solar cells significantly depends on the quality and thickness of perovskite absorber films. However, conventional deposition methods often generate pinholes within ∼300 nm-thick perovskite films, which are detrimental to the large area device manufacture. Here we demonstrated a simple solvent retarding process to deposit uniform pinhole free perovskite films with thicknesses up to ∼800 nm. Solvent evaporation during the retarding process facilitated the components separation in the mixed halide perovskite precursors, and hence the final films exhibited pinhole free morphology and large grain sizes. In addition, the increased precursor concentration after solvent-retarding process led to thick perovskite films. Based on the uniform and thick perovskite films prepared by this convenient process, a champion device efficiency up to 16.8% was achieved. We believe that this simple deposition procedure for high quality perovskite films around micrometer thickness has a great potential in the application of large area perovskite solar cells and other optoelectronic devices.

Film thickness measurement based on nonlinear phase analysis using a Linnik microscopic white-light spectral interferometer.

PubMed

Guo, Tong; Chen, Zhuo; Li, Minghui; Wu, Juhong; Fu, Xing; Hu, Xiaotang

2018-04-20

Based on white-light spectral interferometry and the Linnik microscopic interference configuration, the nonlinear phase components of the spectral interferometric signal were analyzed for film thickness measurement. The spectral interferometric signal was obtained using a Linnik microscopic white-light spectral interferometer, which includes the nonlinear phase components associated with the effective thickness, the nonlinear phase error caused by the double-objective lens, and the nonlinear phase of the thin film itself. To determine the influence of the effective thickness, a wavelength-correction method was proposed that converts the effective thickness into a constant value; the nonlinear phase caused by the effective thickness can then be determined and subtracted from the total nonlinear phase. A method for the extraction of the nonlinear phase error caused by the double-objective lens was also proposed. Accurate thickness measurement of a thin film can be achieved by fitting the nonlinear phase of the thin film after removal of the nonlinear phase caused by the effective thickness and by the nonlinear phase error caused by the double-objective lens. The experimental results demonstrated that both the wavelength-correction method and the extraction method for the nonlinear phase error caused by the double-objective lens improve the accuracy of film thickness measurements.

Fabrication and characterization of thick-film piezoelectric lead zirconate titanate ceramic resonators by tape-casting.

PubMed

Qin, Lifeng; Sun, Yingying; Wang, Qing-Ming; Zhong, Youliang; Ou, Ming; Jiang, Zhishui; Tian, Wei

2012-12-01

In this paper, thick-film piezoelectric lead zirconate titanate (PZT) ceramic resonators with thicknesses down to tens of micrometers have been fabricated by tape-casting processing. PZT ceramic resonators with composition near the morphotropic phase boundary and with different dopants added were prepared for piezoelectric transducer applications. Material property characterization for these thick-film PZT resonators is essential for device design and applications. For the property characterization, a recently developed normalized electrical impedance spectrum method was used to determine the electromechanical coefficient and the complex piezoelectric, elastic, and dielectric coefficients from the electrical measurement of resonators using thick films. In this work, nine PZT thick-film resonators have been fabricated and characterized, and two different types of resonators, namely thickness longitudinal and transverse modes, were used for material property characterization. The results were compared with those determined by the IEEE standard method, and they agreed well. It was found that depending on the PZT formulation and dopants, the relative permittivities ε(T)(33)/ε(0) measured at 2 kHz for these thick-films are in the range of 1527 to 4829, piezoelectric stress constants (e(33) in the range of 15 to 26 C/m(2), piezoelectric strain constants (d(31)) in the range of -169 × 10(-12) C/N to -314 × 10(-12) C/N, electromechanical coupling coefficients (k(t)) in the range of 0.48 to 0.53, and k(31) in the range of 0.35 to 0.38. The characterization results shows tape-casting processing can be used to fabricate high-quality PZT thick-film resonators, and the extracted material constants can be used to for device design and application.

Laser-Induced Fabrication of Metallic Interlayers and Patterns in Polyimide Films

NASA Technical Reports Server (NTRS)

Miner, Gilda A. (Inventor); Stoakley, Diane M. (Inventor); Gaddy, Gregory A. (Inventor); Koplitz, Brent D. (Inventor); Simpson, Steven M. (Inventor); Lynch, Michael F. (Inventor); Ruffner, Samuel C. (Inventor)

2010-01-01

Self-metallizing polyimide films are created by doping polyamic acid solutions with metallic ions and solubilizing agents. Upon creating a film, the film is exposed to coherent light for a specific time and then cured. The resulting film has been found to have a metallic surface layer and a metallic subsurface layer (interlayer). The layer separating the metallic layer has a uniform dispersion of small metal particulates within the polymer. The layer below the interlayer has larger metal particulates uniformly distributed within the polymer. By varying the intensity or time of exposure to the coherent light, three-dimensional control of metal formation within the film is provided.

Investigation of percolation thickness of sputter coated thin NiCr films on clear float glass

NASA Astrophysics Data System (ADS)

Erkan, Selen; Arpat, Erdem; Peters, Sven

2017-11-01

Percolation thickness of reactively sputtered nickel chromium (NiCr) thin films is reported in this study. Nickel-chromium films with the thicknesses in between 1 and 10 nm were deposited on 4 mm clear glass substrate by dc magnetron sputtering. Optical properties such as refractive index, extinction coefficient and also sheet resistance, carrier concentration and mobility of NiCr films were determined by a combination of variable-angle spectroscopic ellipsometry and four point probe measurements. We show both the percolation phenomena in atmosphere and critical percolation thickness for thin NiCr films by both electrical and optical techniques. The two techniques gave consistent results with each other.

Thickness measurement of nontransparent free films by double-side white-light interferometry: Calibration and experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poilane, C.; Sandoz, P.; Departement d'Optique PM Duffieux, Institut FEMTO-ST, UMR CNRS 6174, Universite de Franche-Comte, 25030 Besancon, Cedex

2006-05-15

A double-side optical profilometer based on white-light interferometry was developed for thickness measurement of nontransparent films. The profile of the sample is measured simultaneously on both sides of the film. The resulting data allow the computation of the roughness, the flatness and the parallelism of the sides of the film, and the average thickness of the film. The key point is the apparatus calibration, i.e., the accurate determination of the distance between the reference mirrors of the complementary interferometers. Specific samples were processed for that calibration. The system is adaptable to various thickness scales as long as calibration can bemore » made accurately. A thickness accuracy better than 30 nm for films thinner than 200 {mu}m is reported with the experimental material used. In this article, we present the principle of the method as well as the calibration methodology. Limitation and accuracy of the method are discussed. Experimental results are presented.« less

Pulsed laser deposited metal oxide thin films mediated controlled adsorption of proteins

NASA Astrophysics Data System (ADS)

Kim, Se Jin

Several metal oxide thin films were grown on Si substrate by pulsed laser deposition for controlling adsorption of proteins. No intentional heating of substrate and introduction of oxygen gas during growth were employed. Additionally, fibrinogen, bovine serum albumin (BSA), and lysozyme were used as model protein in this study. The film properties such as cyratllinity, surface roughness, surface electrical charge and chemistry were investigated by many techniques in order to obtain the relationship with protein adsorption. Firstly, as grown Ta2O5 and ZnO thin film were used to study the effects of surface charge on the behaviors of BSA and lysozyme adsorption. The protein thickness results by ellipsometry showed that negatively charged Ta2O5 had a stronger affinity to positively charged lysozyme, while positively charged ZnO had a stronger affinity to negatively charged BSA. The results confirmed electrostatic interaction due to surface charge is one of main factors for determining adsorption of proteins. Furthermore, annealing studies were performed by heat treatment of as grown Ta2O5 and ZnO at 800°C in air ambience. Annealed Ta2O5 thin film had almost wetting property (from 10.02° to less than 1˜2°) and the change of cystallinity (from amorphous to cyrsalline) while annealed ZnO thin film had a reduced contact angle (from 75.65° to 39.41°) and remained to crystalline structure. The fibrinogen thickness on annealed Ta2O5 film was increased compared with as grown sample, while heat treated ZnO film showed much reduction of fibrinogen adsorption. Binary Ta-Zn oxide thin films (TZ) were grown by preparing PLD target composed of 50 wt% Ta2O5 and 50 wt% ZnO. This binary film had IEP pH 7.1 indicating nearly neutral charge in pH 7.4 PBS solution, and hydrophilic property. Ellipsometrical results showed that TZ film had the lowest fibrinogen, BSA and lysozyme thickness after 120 min adsorption compared with Ta2O5 and ZnO. Other samples, bilayer oxide films in

Structural, optical and ac electrical characterization of CBD synthesized NiO thin films: Influence of thickness

NASA Astrophysics Data System (ADS)

Das, M. R.; Mukherjee, A.; Mitra, P.

2017-09-01

We have studied the electrical conductivity, dielectric relaxation mechanism and impedance spectroscopy characteristics of nickel oxide (NiO) thin films synthesized by chemical bath deposition (CBD) method. Thickness dependent structural, optical and ac electrical characterization has been carried out and deposition time was varied to control the thickness. The material has been characterized using X-ray diffraction and UV-VIS spectrophotometer. Impedance spectroscopy analysis confirmed enhancement of ac conductivity and dielectric constant for films deposited with higher deposition time. Decrease of grain size in thicker films were confirmed from XRD analysis and activation energy of the material for electrical charge hopping process was increased with thickness of the film. Decrease in band gap in thicker films were observed which could be associated with creation of additional energy levels in the band gap of the material. Cole-Cole plot shows contribution of both grain and grain boundary towards total resistance and capacitance. The overall resistance was found to decrease from 14.6 × 105 Ω for 30 min deposited film ( 120 nm thick) to 2.42 × 105 Ω for 120 min deposited film ( 307 nm thick). Activation energy value to electrical conduction process evaluated from conductivity data was found to decrease with thickness. Identical result was obtained from relaxation time approach suggesting hopping mechanism of charge carriers.

Super-resolved thickness maps of thin film phantoms and in vivo visualization of tear film lipid layer using OCT

PubMed Central

dos Santos, Valentin Aranha; Schmetterer, Leopold; Triggs, Graham J.; Leitgeb, Rainer A.; Gröschl, Martin; Messner, Alina; Schmidl, Doreen; Garhofer, Gerhard; Aschinger, Gerold; Werkmeister, René M.

2016-01-01

In optical coherence tomography (OCT), the axial resolution is directly linked to the coherence length of the employed light source. It is currently unclear if OCT allows measuring thicknesses below its axial resolution value. To investigate spectral-domain OCT imaging in the super-resolution regime, we derived a signal model and compared it with the experiment. Several island thin film samples of known refractive indices and thicknesses in the range 46 – 163 nm were fabricated and imaged. Reference thickness measurements were performed using a commercial atomic force microscope. In vivo measurements of the tear film were performed in 4 healthy subjects. Our results show that quantitative super-resolved thickness measurement can be performed using OCT. In addition, we report repeatable tear film lipid layer visualization. Our results provide a novel interpretation of the OCT axial resolution limit and open a perspective to deeper extraction of the information hidden in the coherence volume. PMID:27446696

Prototype Superconducting Planar Transformers Using High-Tc Thin and Thick Films

DTIC Science & Technology

1992-01-01

AUG27 0%2 and Thick FilmsS A D W. C. McGinnis J. S. Briggs T. E . Jones L. J. Johnson 92-23707 Approved for public release; distribution Is unlimited. 92...platelet-like crystals, given the opportunity, will lie flat against each other. Reasonably good alignment can be produced by simply pressing the...these latter films, only the step-cooled sample (FCS-75) produced a reasonably smooth, uniform-looking film, and therefore only that film was

Metallic Thin-Film Bonding and Alloy Generation

NASA Technical Reports Server (NTRS)

Peotter, Brian S. (Inventor); Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Droppers, Lloyd (Inventor)

2016-01-01

Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

Cellular-foam polypropylene ferroelectrets with increased film thickness and reduced resonance frequency

NASA Astrophysics Data System (ADS)

Sborikas, Martynas; Wegener, Michael

2013-12-01

Ferroelectrets are piezoelectric materials suitable for acoustic applications such as airborne ultrasonic transducers. Typical ferroelectrets exhibit resonance frequencies in the high kHz to low MHz range. In order to decrease the transducer resonance frequencies to the low kHz range, processes such as gas-diffusion expansion and electric charging were adjusted to cellular films which are initially twice as thick as in earlier studies. The demonstrated film expansion and electric charging lead to mechanically soft cellular structures which show high piezoelectric activities with coefficients up to 130 pC/N. Due to the simultaneously increased film thicknesses, the resonance frequencies are lowered down to about 233 kHz.

Polymer-assisted aqueous deposition of metal oxide films

DOEpatents

Li, DeQuan [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM

2003-07-08

An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

Analysis of thickness dependent on crystallization kinetics in thin isotactic-polysterene films

NASA Astrophysics Data System (ADS)

Khairuddin

2016-11-01

Crystalliaztion kinetics of thin film of Isotactic Polysterene (it-PS) films has been studied. Thin PET films having thickness of 338, 533, 712, 1096, 1473, and 2185 A° were prepared by using spin-cast technique. The it-PS crystals were grown on Linkam-hostage in the temperature range 130-240°C with an interval of 10°C. The crystal growths are measured by optical microscopy in lateral direction. It was found that a substantial thickness dependence on crystallisation rate. The analysis using fitting technique based on theory crystal growth of Lauritzen-Hoffman showed that the fitting technique could not resolve to predict the mechanism controlling the thickness dependence on the rate of crystallisation. The possible reasons were due to the crystallisation rate varies with the type of crystals (smooth, rough, overgrowth terrace), and the crystallisation rate changes with the time of crystallisation.

Advanced optical modeling of TiN metal hard mask for scatterometric critical dimension metrology

NASA Astrophysics Data System (ADS)

Ebersbach, Peter; Urbanowicz, Adam M.; Likhachev, Dmitriy; Hartig, Carsten

2017-03-01

The majority of scatterometric production control models assume constant optical properties of the materials and only dimensional parameters are allowed to vary. However, this assumption, especially in case of thin-metal films, negatively impacts model precision and accuracy. In this work we focus on optical modeling of the TiN metal hardmask for scatterometry applications. Since the dielectric function of TiN exhibits thickness dependence, we had to take this fact into account. Moreover, presence of the highly absorbing films influences extracted thicknesses of dielectric layers underneath the metal films. The later phenomenon is often not reflected by goodness of fit. We show that accurate optical modeling of metal is essential to achieve desired scatterometric model quality for automatic process control in microelectronic production. Presented modeling methodology can be applied to other TiN applications such as diffusion barriers and metal gates as well as for other metals used in microelectronic manufacturing for all technology nodes.

Mid-infrared laser-absorption diagnostic for vapor-phase fuel mole fraction and liquid fuel film thickness

NASA Astrophysics Data System (ADS)

Porter, J. M.; Jeffries, J. B.; Hanson, R. K.

2011-02-01

A novel two-wavelength mid-infrared laser-absorption diagnostic has been developed for simultaneous measurements of vapor-phase fuel mole fraction and liquid fuel film thickness. The diagnostic was demonstrated for time-resolved measurements of n-dodecane liquid films in the absence and presence of n-decane vapor at 25°C and 1 atm. Laser wavelengths were selected from FTIR measurements of the C-H stretching band of vapor n-decane and liquid n-dodecane near 3.4 μm (3000 cm-1). n-Dodecane film thicknesses <20 μm were accurately measured in the absence of vapor, and simultaneous measurements of n-dodecane liquid film thickness and n-decane vapor mole fraction (300 ppm) were measured with <10% uncertainty for film thicknesses <10 μm. A potential application of the measurement technique is to provide accurate values of vapor mole fraction in combustion environments where strong absorption by liquid fuel or oil films on windows make conventional direct absorption measurements of the gas problematic.

Terahertz antireflection coating enabled by a subwavelength metallic mesh capped with a thin dielectric film

DOE PAGES

Huang, Li; Chen, Hou -Tong; Zeng, Beibei; ...

2016-03-30

Metamaterials/metasurfaces have enabled unprecedented manipulation of electromagnetic waves. Here we present a new design of metasurface structure functioning as antireflection coatings. The structure consists of a subwavelength metallic mesh capped with a thin dielectric layer on top of a substrate. By tailoring the geometric parameters of the metallic mesh and the refractive index and thickness of the capping dielectric film, reflection from the substrate can be completely eliminated at a specific frequency. Compared to traditional methods such as coatings with single- or multi-layer dielectric films, the metasurface antireflection coatings are much thinner and the requirement of index matching is largelymore » lifted. Here, this approach is particularly suitable for antireflection coatings in the technically challenging terahertz frequency range and is also applicable in other frequency regimes.« less

A study for anticorrosion and tribological behaviors of thin/thick diamond-like carbon films in seawater