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Sample records for aln ceramic substrates

  1. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

    SciTech Connect

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhou, Shizhong; Lin, Zhiting; Li, Guoqiang

    2015-05-14

    AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is a direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.

  2. AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy.

    PubMed

    Tamura, Yosuke; Hane, Kazuhiro

    2015-12-01

    AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60-120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec. PMID:26625884

  3. Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, Gang Seok; Lee, Chanmi; Jeon, Hunsoo; Lee, Chanbin; Bae, Sung Geun; Ahn, Hyung Soo; Yang, Min; Yi, Sam Nyung; Yu, Young Moon; Lee, Jae Hak; Honda, Yoshio; Sawaki, Nobuhiko; Kim, Suck-Whan

    2016-05-01

    Even though a patterned sapphire substrate (PSS) has been used for the growth of a high-quality epilayer because of its many advantages, it has not been successfully used to grow an AlN epilayer for ultraviolet (UV) light-emitting diodes (LEDs) on a PSS up to now. We report the growth of a high-quality AlN epilayer on a PSS, as a substrate for the manufacture of UV LEDs, by hydride vapor phase epitaxy (HVPE). The X-ray diffraction (XRD) peaks for the AlN epilayer grown on the PSS indicate that crystalline AlN with a wurtzite structure was grown successfully on the PSS. Furthermore, HVPE combining both in situ HVPE technology and liquid-phase epitaxy (LPE) using a mixed source is proposed as a novel method for the growth of a flat AlN epilayer on a PSS.

  4. MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation.

    PubMed

    E, Yanxiong; Hao, Zhibiao; Yu, Jiadong; Wu, Chao; Liu, Runze; Wang, Lai; Xiong, Bing; Wang, Jian; Han, Yanjun; Sun, Changzheng; Luo, Yi

    2015-12-01

    By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films. PMID:26437653

  5. MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

    NASA Astrophysics Data System (ADS)

    E, Yanxiong; Hao, Zhibiao; Yu, Jiadong; Wu, Chao; Liu, Runze; Wang, Lai; Xiong, Bing; Wang, Jian; Han, Yanjun; Sun, Changzheng; Luo, Yi

    2015-10-01

    By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

  6. Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates

    NASA Astrophysics Data System (ADS)

    Argunova, T. S.; Gutkin, M. Yu.; Mokhov, E. N.; Kazarova, O. P.; Lim, J.-H.; Shcheglov, M. P.

    2015-12-01

    The problem of prevention of AlN crystal layers from cracking under action of thermoelastic stresses during growth of these layers on SiC substrates has been studied. Calculation of residual thermoelastic stresses in AlN/SiC double-layer system has shown that cracking of the AlN layer during cooling is inevitable until this layer becomes at least 15 times thicker than a substrate. The required ratio of the thicknesses of the layer and the substrate can be reached by growing an AlN layer with simultaneous evaporation of the SiC substrate. Experimentally performed evaporation of SiC substrates in one process with growing AlN single layers on them using the sublimation sandwich method has made it possible to prevent these layers from cracking. Continuous (non-cracked) plates with 0.2-0.8 mm thickness without substrates have been obtained as a result of these experiments. According to X-ray images obtained in synchrotron radiation, they consist of single crystalline AlN of 2H polytype, contain dislocations, but do not contain cracks. The degree of crystallinity of these thin plates, which was estimated by the full widths at half-maximum of rocking curves of X-ray diffraction reflections, corresponds to the degree of crystallinity of thick (3-5 mm) AlN layers grown on nonevaporated SiC substrates.

  7. Synthesis of c-axis oriented AlN thin films on different substrates: A review

    SciTech Connect

    Iriarte, G.F.

    2010-09-15

    Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N{sub 2} gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

  8. Large-area AlN substrates for electronic applications: An industrial perspective

    NASA Astrophysics Data System (ADS)

    Bondokov, Robert T.; Mueller, Stephan G.; Morgan, Kenneth E.; Slack, Glen A.; Schujman, Sandra; Wood, Mark C.; Smart, Joseph A.; Schowalter, Leo J.

    2008-08-01

    We report on the status of the vapor growth of high-quality AlN bulk crystals by the sublimation-recondensation technique for the commercial production of AlN wafers up to 2 in diameter. AlN boules and wafers have been characterized by X-ray Laue backscattering, diffraction, and rocking curves measured in double-axis configuration, demonstrating a full-width at half-maximum (FWHM) of 28 and 32 arcsec for the symmetric and asymmetric rocking curves, respectively. The etch pit density (EPD) for different AlN substrate orientations was found to be less than 10 4 cm -2. Impurity levels have been measured by glow discharge mass-spectrometry (GDMS) and secondary ion mass-spectroscopy (SIMS). The oxygen content as measured by SIMS shows concentrations <10 18 cm -3. Additionally, a high thermal conductivity of ˜270 W/m K has been measured by the flash method. High-quality homoepitaxial and graded AlGaN layers were grown on the on-axis-oriented AlN substrates. The lack of both piezoelectric and spontaneous polarization fields, for nitride heterostructures grown in non-polar directions, has recently created significant interest in high-quality, non-polar nitride substrates to boost the performance of light emitting diodes (LEDs) and laser diodes. Initial epitaxial results on non-polar AlN substrates are presented.

  9. Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering

    SciTech Connect

    Valcheva, E.; Birch, J.; Persson, P. O. A ring .; Tungasmita, S.; Hultman, L.

    2006-12-15

    Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to the silicon substrate of AlN(0001)(parallel sign)Si(001). The AlN film is observed to nucleate randomly on the Si surface and grows three dimensionally, forming columnar domains. The in-plane orientation reveals four domains with their a axes rotated by 15 deg. with respect to each other: AlN<1120>(parallel sign)Si[110], AlN<0110>(parallel sign)Si[110], AlN<1120>(parallel sign)Si[100], and AlN<0110>(parallel sign)Si[100] An explanation of the growth mode based on the large lattice mismatch and the topology of the substrate surface is proposed.

  10. Cubic AlN thin film formation on quartz substrate by pulse laser deposition

    NASA Astrophysics Data System (ADS)

    Biju, Zheng; Wen, Hu

    2016-06-01

    Cubic AlN thin films were obtained on quartz substrate by pulse laser deposition in a nitrogen reactive atmosphere. A Nd-YAG laser with a wavelength of 1064 nm was used as the laser source. In order to study the influence of the process parameters on the deposited AlN film, the experiments were performed at various technique parameters of laser energy density from 70 to 260 J/cm2, substrate temperature from room temperature to 800 °C and nitrogen pressure from 0.1 to 50 Pa. X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy were applied to characterize the structure and surface morphology of the deposited AlN films. It was found that the structure of AlN films deposited in a vacuum is rocksalt under the condition of substrate temperature 600-800 °C, nitrogen pressure 10-0.1 Pa and a moderate laser energy density (190 J/cm2). The high quality AlN film exhibited good optical property. Project supported by the Yunnan Provincial Natural of Science Foundation of China (No. KKSY201251089).

  11. Effect of substrate roughness on c-oriented AlN thin films

    NASA Astrophysics Data System (ADS)

    Artieda, Alvaro; Barbieri, Michela; Sandu, Cosmin Silviu; Muralt, Paul

    2009-01-01

    (001)-textured AlN thin films as needed for bulk acoustic wave devices exhibit large mechanical stress variations as a function of growth substrate properties. We studied the relationship between stress and the surface morphology of a thermally oxidized silicon substrate that was modified by a thin amorphous silicon layer. A rms roughness of 0.1-1.1 nm of the latter resulted in an increase in mechanical stress in the subsequently sputtered AlN thin film going from -700 to +200 MPa. At the same time, the x-ray rocking curve width of AlN increased from 1.3° to 2.3°. The roughness of the Si interlayer was controlled by the Ar sputter pressure. Interestingly, the maximal roughness is obtained at an intermediate pressure. This is explained by an interplay of nucleation and diffusion phenomena governed by the kinetics of impinging atoms and ions. The Si interlayer was essential to avoid cracking of membranes exhibiting mixed Pt and SiO2 surfaces below the AlN film.

  12. AlN texturing and piezoelectricity on flexible substrates for sensor applications

    SciTech Connect

    Smecca, Emanuele; Pellegrino, Giovanna; Alberti, Alessandra; Maita, Francesco; Maiolo, Luca; Fortunato, Guglielmo; Vinciguerra, Vincenzo; La Magna, Luigi; Mirabella, Salvo; Condorelli, Guglielmo G.

    2015-06-08

    We show that AlN-based piezocapacitors with relatively high piezoelectric coefficient (d{sub 33}) values (3–4 pC/N) can be fabricated on polyimide (PI) substrates at 160 °C or even at room temperature by sputtering processes. With respect to PI, a reduction of the piezoelectric performances was observed on polyethylene naphthalate (PEN). With the same approach, a d{sub 33} value as high as 8 pC/N was achieved on rigid substrates (SiO{sub 2}/Si). In all cases, a thin Al buffer layer was deposited, immediately before AlN, without breaking the vacuum in the deposition chamber, in order to preserve the interface from contaminations that would obstruct the optimal atomic stratification with the desired [0001] growth axis. The piezoelectric behavior was thus correlated to the degree of texturing of the AlN layer through the evaluation of the XRD texturing coefficients and to the morphology by means of AFM analyses. We show that a high level of roughness introduced by the PEN substrate, coupled with the effect of the substrate flexibility on the piezoelectric coefficient, reduces the impact of the AlN texturing on the d{sub 33} values.

  13. Adhesion strength and nucleation thermodynamics of four metals (Al, Cu, Ti, Zr) on AlN substrates

    NASA Astrophysics Data System (ADS)

    Tao, Yuan; Ke, Genshui; Xie, Yan; Chen, Yigang; Shi, Siqi; Guo, Haibo

    2015-12-01

    Devices based on AlN generally require adherent and strong interfaces between AlN and other materials, whereas most metals are known to be nonwetting to AlN and form relatively weak interfaces with AlN. In this study, we selected four representative metals (Al, Cu, Ti, and Zr) to study the adhesion strength of the AlN/metal interfaces. Mathematical models were constructed between the adhesion strength and enthalpy of formation of Al-metal solid solutions, the surface energies of the metals, and the lattice mismatch between the metals and AlN, based on thermodynamic parameters calculated using density functional theory. It appears that the adhesion strength is mainly determined by the lattice mismatch, and is in no linear correlation with either the Al-metal solution's formation enthalpies or the metals' surface energies. We also investigated the nucleation thermodynamics of the four metals on AlN substrates. It was found that Ti forms the strongest interface with AlN, and has the largest driving force for nucleation on AlN substrates among the four metals.

  14. Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (1 1 1) substrates

    NASA Astrophysics Data System (ADS)

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Lin, Yunhao; Zhou, Shizhong; Qian, Huirong; Gao, Fangliang; Yang, Hui; Li, Guoqiang

    2014-03-01

    The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (1 1 1) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (1 1 1) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (1 1 1) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within ˜321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes.

  15. Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

    PubMed Central

    Tran, Binh Tinh; Hirayama, Hideki; Maeda, Noritoshi; Jo, Masafumi; Toyoda, Shiro; Kamata, Norihiko

    2015-01-01

    High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates. The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves. Atomic force microscopy and transmission electron microscopy confirmed that the roughness of the surface was low (3.5 nm) and the dislocation density was very low (1.5 × 108 cm−2 (screw), 3.7 × 108 (edge) cm−2). PMID:26439169

  16. Enhanced adhesion and conductivity of Cu electrode on AlN substrate for thin film thermoelectric device

    NASA Astrophysics Data System (ADS)

    Hu, Shaoxiong; Chen, Xin; Deng, Yuan; Wang, Yao; Gao, Hongli; Zhu, Wei; Cao, Lili; Luo, Bingwei; Zhu, Zhixiang; Ma, Guang; Han, Yu

    2015-02-01

    The Cu thin film electrode grown on aluminum nitride (AlN) substrate is widely used in the thin film thermoelectric devices due to its high electrical conductivity. We have developed a new type of buffer layer by co-sputtering Ti and Cu forming Ti-Cu layer. The Ti-Cu layer was sputtered on the Ti buffered AlN substrate so that the adhesion and electrical conductivity properties of the Cu film electrode on AlN substrate could be improved. The interface between the thin films and the substrate were characterized by the scanning electron microscope (SEM). Nanoscratch tests were conducted on a nanomechanical test system to investigate the adhesion between the Cu film electrodes and AlN substrate. Meanwhile, accelerated ageing test under thermal cycling was conducted to evaluate the reliability of the thin film electrode. The results show that the adhesion and the reliability of Cu film electrode on AlN substrate have been greatly improved by employing Ti-Cu/Ti buffer layers.

  17. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Osipov, A. V.; Sergeeva, O. N.; Kiselev, D. A.; Bogomolov, A. A.; Solnyshkin, A. V.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-05-01

    This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride-hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

  18. Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate

    NASA Astrophysics Data System (ADS)

    Tungare, Mihir; Weng, Xiaojun; Leathersich, Jeffrey M.; Suvarna, Puneet; Redwing, Joan M.; (Shadi) Shahedipour-Sandvik, F.

    2013-04-01

    The changes that the AlN buffer and Si substrate undergo at each stage of our substrate engineering process, previously shown to lead to a simultaneous and substantial reduction in film crack density and dislocation density in overgrown GaN, are presented. Evidence of ion-implantation assisted grain reorientation for AlN islands coupled with physical isolation from the bulk Si substrate prove to be the dominating driving forces. This is further emphasized with x-ray diffraction analysis that demonstrates a reduction in the in-plane lattice constant of AlN from 3.148 Å to 3.113 Å and a relative change in rotation of AlN islands by 0.135° with regard to the Si substrate after substrate engineering. Misfit dislocations at the AlN-Si interface and disorder that is normally associated with formation of amorphous SiNx at this interface are considered to be two of the major contributors to dislocation nucleation within overgrown GaN. Following our technique, the disappearance of disorder at the AlN-Si interface is observed. Extensive ellipsometry and transmission electron microscopy suggests that larger AlN islands with a smoother surface morphology could further reduce the dislocation density below that previously reported. A 1.2 μm GaN layer deposited on an AlN buffer with larger islands and smoother morphology exhibits a 14× reduction in surface pit density after undergoing the ion-implantation assisted substrate modification technique.

  19. Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate

    DOEpatents

    Kline, Gerald R.; Lakin, Kenneth M.

    1985-12-03

    A method of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers.

  20. Growth of epitaxial AlN films on (Mn,Zn)Fe 2O 4 substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Ohta, J.; Fujioka, H.; Takahashi, H.; Oshima, M.

    2002-09-01

    We have grown AlN on (Mn,Zn)Fe 2O 4 substrates by pulsed laser deposition (PLD) and investigated their structural properties using high resolution X-ray diffraction (HRXRD), reflection high energy electron diffraction (RHEED), and atomic force microscopy (AFM). We have observed the transition of the RHEED pattern from sharp streaks into clear spots at the early stage of the film growth, which indicates that the growth mode of AlN changed from the two-dimensional mode to the three-dimensional mode due to the stress buildup. RHEED and XRD observations have revealed that hexagonal AlN (0 0 0 1) grows on (Mn,Zn)Fe 2O 4 (1 1 1) with the in-plane epitaxial relationship of [1 1 -2 0]AlN//[0 1 -1](Mn,Zn)Fe 2O 4. The lattice mismatch for this alignment is calculated to be 6%. The FWHM value of the AlN (0 0 0 2) X-ray rocking curve is as low as 77 arcsec, which indicates that the density of the threading screw dislocations in the AlN film is quite low.

  1. Homoepitaxial AlN thin films deposited on m-plane ( 1 1 ¯ 00) AlN substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Bryan, Isaac; Bryan, Zachary; Bobea, Milena; Hussey, Lindsay; Kirste, Ronny; Collazo, Ramón; Sitar, Zlatko

    2014-10-01

    AlN homoepitaxial films were grown by metalorganic chemical vapor deposition on chemo-mechanically polished ( 1 1 ¯ 00)-oriented single crystalline AlN substrates. The dependence of the surface morphology, structural quality, and unintentional impurity concentrations on the growth temperature was studied in order to determine the most appropriate growth conditions for high quality ( 1 1 ¯ 00) AlN epitaxial layers. Optically smooth surfaces (RMS roughness of 0.4 nm) and high crystalline quality, as demonstrated by the presence of FWHM values for ( 10 1 ¯ 0) rocking curves along [ 0001] of less than 25 arc.sec, were achieved for films grown above 1350 °C. Furthermore, sharp and intense near band edge luminescence was observed in these high quality films. A reduction in unintentional oxygen impurity levels was seen with an increase in growth temperature. These high crystalline quality films are suitable for device applications and hold great potential for providing an ideal platform for deep UV emitters with high Al content AlGaN without polarization related effects.

  2. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Tamaki, Shinya; Yamashita, Yasuhiro; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-08-01

    10-µm-thick a-plane AlN(11\\bar{2}0) films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were prepared on r-plane sapphire (1\\bar{1}02) substrates. The crystallinity of all the samples with different LT-AlN buffer layer thicknesses was improved after thermal annealing and HT-AlN growth, mainly owing to the elimination of domain boundaries and the concurrent suppression of facet formation. The optimum crystallinity of HT-AlN films was obtained with full widths at half maximum of the X-ray rocking curves of 660 arcsec for AlN(11\\bar{2}0)\\parallel [1\\bar{1}00]AlN and 840 arcsec for (0002) using a 200-nm-thick LT-AlN buffer layer.

  3. Substrate Heating Effect on c-Axis Texture and Piezoelectric Properties of AlN Thin Films Deposited by Unbalanced Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Hasheminiasari, Masood; Lin, Jianliang

    2016-06-01

    Aluminum nitride (AlN) thin films with highly preferred (002) orientations have been reactively deposited by a pulsed-closed field unbalanced magnetron sputtering system using TiN/Ti as the seed/adhesion layer with various substrate temperatures. The texture, orientation and piezoelectric properties of AlN films were characterized by means of x-ray diffraction, rocking curves and laser interferometry. A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. It was found that a slight substrate temperature increase would significantly affect the (002) orientation and the piezoelectric coefficient of AlN thin films compared to the coating obtained with no intentional substrate heating, while higher temperature applications on substrate deteriorated the c-axis texture of the coatings without significant improvement in the piezoelectric response of AlN films.

  4. Substrate Heating Effect on c-Axis Texture and Piezoelectric Properties of AlN Thin Films Deposited by Unbalanced Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Hasheminiasari, Masood; Lin, Jianliang

    2016-03-01

    Aluminum nitride (AlN) thin films with highly preferred (002) orientations have been reactively deposited by a pulsed-closed field unbalanced magnetron sputtering system using TiN/Ti as the seed/adhesion layer with various substrate temperatures. The texture, orientation and piezoelectric properties of AlN films were characterized by means of x-ray diffraction, rocking curves and laser interferometry. A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. It was found that a slight substrate temperature increase would significantly affect the (002) orientation and the piezoelectric coefficient of AlN thin films compared to the coating obtained with no intentional substrate heating, while higher temperature applications on substrate deteriorated the c-axis texture of the coatings without significant improvement in the piezoelectric response of AlN films.

  5. Impact of titanium layer and silicon substrate properties on the microstructure of c-axis oriented AlN thin films

    NASA Astrophysics Data System (ADS)

    Wistrela, E.; Bittner, A.; Schmid, U.

    2015-05-01

    Highly c-axis orientated sputter deposited aluminium nitride (AlN) thin films are widely used as piezoelectric layers in micro-electro-mechanical systems (MEMS). Therefore, stable and reliable deposition and patterning of the AlN thin films in the fabrication process of such devices is of utmost importance. In this work, we study the wet chemical etching behavior of highly c-axis oriented AlN layers as well as the film-related residuals after the etching procedure. To investigate the impact of the underlying material on the quality of the AlN films they are either deposited on pure silicon (Si) substrates or on Si substrates covered with a sputter-deposited thin titanium (Ti) film. The 620 nm thin AlN layers are synthesized simultaneously onto both substrate types and subsequently wet-chemical etched in a phosphorous acid based etching solution at a temperature of 80°C. We demonstrate a significant difference in surface roughness of the untreated AlN films when sputter-deposited on Ti or pure Si. Furthermore, we analyze the piezoelectric properties of the deposited films. Although the XRD analyses indicate a high c-axis orientated wurtzite structure for all deposited films, the absolute value of the piezoelectric coefficients |d33| of AlN thin films synthesized on Ti are 0.4-4.3 pC/N, whereas corresponding values of 5.2-6 pC/N are determined at those deposited on pure Si substrates,. Finally, after wet chemically etching a porous, but homogeneous AlN microstructure is observed for samples synthesized onto Ti layers, whereas AlN layers deposited directly on Si substrate are either etched very inhomogenously or almost completely with some etch resistant pyramidal-shaped residues. This might be due to a local change in polarity within the AlN layer.

  6. Interface Characterization and Bonding Mechanisms of Cold Gas-Sprayed Al Coatings on Ceramic Substrates

    NASA Astrophysics Data System (ADS)

    Drehmann, R.; Grund, T.; Lampke, T.; Wielage, B.; Manygoats, K.; Schucknecht, T.; Rafaja, D.

    2015-01-01

    The aim of the present work is to contribute to the understanding of the adhesion mechanisms, which take effect at the interface of cold gas-sprayed metallic coatings on ceramic substrates. Former investigations revealed that it is possible to deposit well-adhering metallic coatings on atomically smooth ceramics. This led to the conclusion that mechanical interlocking is not always a necessary precondition for bonding. A combination of recrystallization processes induced by adiabatic shear processes and heteroepitaxial growth might be an explanation for the high observed adhesion strengths. The present work focuses on the examination of the interface area of cold gas-sprayed aluminum on various ceramic substrates by means of SEM and HRTEM. Beside sintered corundum plates, single-crystalline sapphire substrates with defined lattice orientations were used as substrates for the deposition of the coatings. In addition to Al2O3 substrates, aluminum coatings were also deposited on AlN, Si3N4, and SiC in order to investigate, whether the different amounts of ionic bonds in these substrate materials have an influence on the substrate/coating interface formation. Additional information about the local heteroepitaxy and its effect on the adhesion of Al coatings was obtained from experiments performed on coatings produced by means of physical vapor deposition.

  7. Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rong, Xin; Wang, Xinqiang; Chen, Guang; Pan, Jianhai; Wang, Ping; Liu, Huapeng; Xu, Fujun; Tan, Pingheng; Shen, Bo

    2016-05-01

    Residual stress in AlN films grown by molecular beam epitaxy (MBE) has been studied by Raman scattering spectroscopy. A strain-free Raman frequency and a biaxial stress coefficient for E2(high) mode are experimentally determined to be 657.8 ± 0.3 cm-1 and 2.4 ± 0.2 cm-1 / GPa, respectively. By using these parameters, the residual stress of a series of AlN layers grown under different buffer layer conditions has been investigated. The residual compressive stress is found to be obviously decreased by increasing the Al/N beam flux ratio of the buffer layer, indicating the generation of tensile stress due to stronger coalescence of AlN grains, as also confirmed by the in-situ reflection high energy electron diffraction (RHEED) monitoring observation. The stronger coalescence does lead to improved quality of AlN films as expected.

  8. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramón; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ∼250 nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150 kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8 nm without a cavity. The DH and MQW structures showed gain values of 50–60 cm{sup −1} when pumped at 1 MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280 nm laser diodes.

  9. Epitaxial growth of AlN and Al 0.5Ga 0.5N layers on aluminum nitride substrates

    NASA Astrophysics Data System (ADS)

    Schowalter, L. J.; Rojo, J. C.; Slack, G. A.; Shusterman, Y.; Wang, R.; Bhat, I.; Arunmozhi, G.

    2000-04-01

    High-quality epitaxial AlN and Al xGa 1- xN layers have been grown by organo-metallic vapor-phase epitaxy (OMVPE) on single-crystal AlN substrates. Here we report the characterization of these layers on a-face substrates using Rutherford backscattering/ion channeling spectroscopy (RBS), atomic force microscopy (AFM), double-crystal X-ray diffraction (XRD), and preliminary electrical results. Ion channeling along the [ 1 1 2¯ 0 ] axis gave a minimum yield of 1.5% for an AlN layer and 2.2% for an Al 0.5Ga 0.5N, indicating excellent crystal quality. A resistivity of 20 Ω cm and a mobility of 20 cm 2/V s was measured in a Si-doped, 1 μm-thick, epitaxial Al 0.5Ga 0.5N grown epitaxially on the AlN substrates.

  10. Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

    2016-05-01

    Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

  11. Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

    SciTech Connect

    Schneider, M.; Bittner, A.; Patocka, F.; Schmid, U.; Stoeger-Pollach, M.

    2012-11-26

    In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.

  12. Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates

    NASA Astrophysics Data System (ADS)

    Schowalter, L. J.; Shusterman, Y.; Wang, R.; Bhat, I.; Arunmozhi, G.; Slack, G. A.

    2000-02-01

    High quality epitaxial AlN and AlxGa1-xN layers have been grown by organo-metallic vapor-phase epitaxy on single crystal a-face AlN substrates. Here we report the characterization of these layers using Rutherford backscattering/ion channeling spectroscopy, atomic force microscopy, double crystal x-ray diffraction, and preliminary electrical results. Ion channeling along the [112¯0] axis gave a minimum yield of 1.5% for an AlN layer and 2.2% for an Al0.5Ga0.5N, indicating excellent crystal quality. A resistivity of 20 Ω cm and a mobility of 20 cm2/V s was measured in a Si-doped, 1-μm-thick Al0.5Ga0.5N grown epitaxially on the AlN substrates.

  13. Radiative Properties of Ceramic Al2O3, AlN, and Si3N4: I. Experiments

    NASA Astrophysics Data System (ADS)

    Cheng, Qiang; Yang, Peiyan; Zhang, Zhuomin

    2016-06-01

    The radiative properties of dense ceramic Al2O3, AlN, and Si3N4 plates are investigated from the visible to the mid-infrared region at room temperature. Each specimen has different surface finishings on different sides of the laminate. A monochromator was used with an integrating sphere to measure the directional-hemispherical reflectance and transmittance of these samples at wavelengths from 0.4 μ m to 1.8 μ m. The specular reflectance was obtained by a subtraction technique. A Fourier-transform infrared spectrometer was used to measure the directional-hemispherical or specular reflectance and transmittance with appropriate accessories from about 1.6 μ m to 19 μ m. All measurements were performed at near-normal incidence on either the smooth side or the rough side of the sample. The experimental observations are qualitatively interpreted considering the optical constants, surface roughness, and volume scattering and absorption.

  14. Influence of high-temperature processing on the surface properties of bulk AlN substrates

    NASA Astrophysics Data System (ADS)

    Tojo, Shunsuke; Yamamoto, Reo; Tanaka, Ryohei; Thieu, Quang Tu; Togashi, Rie; Nagashima, Toru; Kinoshita, Toru; Dalmau, Rafael; Schlesser, Raoul; Murakami, Hisashi; Collazo, Ramón; Koukitu, Akinori; Monemar, Bo; Sitar, Zlatko; Kumagai, Yoshinao

    2016-07-01

    Deep-level luminescence at 3.3 eV related to the presence of Al vacancies (VAl) was observed in room temperature photoluminescence (RT-PL) spectra of homoepitaxial AlN layers grown at 1450 °C by hydride vapor-phase epitaxy (HVPE) and cooled to RT in a mixture of H2 and N2 with added NH3. However, this luminescence disappeared after removing the near surface layer of AlN by polishing. In addition, the deep-level luminescence was not observed when the post-growth cooling of AlN was conducted without NH3. Secondary ion mass spectrometry (SIMS) studies revealed that although the point defect density of the interior of the AlN layers remained low, the near surface layer cooled in the presence of NH3 was contaminated by Si impurities due to both suppression of the surface decomposition by the added NH3 and volatilization of Si by decomposition of the quartz reactor walls at high temperatures. The deep-level luminescence reappeared after the polished AlN wafers were heated in presence of NH3 at temperatures above 1400 °C. The surface contamination by Si is thought to generate VAl near the surface by lowering their formation energy due to the Fermi level effect, resulting in deep-level luminescence at 3.3 eV caused by the shallow donor (Si) to VAl transition.

  15. Ceramic foam substrates for automotive catalyst applications: fluid mechanic analysis

    NASA Astrophysics Data System (ADS)

    Dimopoulos Eggenschwiler, Panayotis; Tsinoglou, Dimitrios N.; Seyfert, Jacqueline; Bach, Christian; Vogt, Ulrich; Gorbar, Michal

    2009-08-01

    Several properties of ceramic foams render them promising substrates for various industrial processes. For automotive applications, the foam properties that need to be further studied include the substrate impact on the exhaust gas flow, in terms of pressure drop and flow uniformity. In this paper, pressure drop measurements are performed with different honeycomb and ceramic foam substrates, and pressure drop correlations are discussed. The flow uniformity upstream and downstream of the substrates is evaluated using particle image velocimetry. The results show that ceramic foam substrates induce higher pressure drop, while increasing the uniformity of the flow. In contrast to honeycomb monoliths, the flow uniformity downstream of ceramic foams does not decrease with increasing flow velocity. The higher flow uniformity of ceramic foams is not only caused by their higher pressure drop, but also by flow homogenization that occurs inside the ceramic foam structure, as a result of the momentum exchange perpendicular to the main flow direction.

  16. Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Vargas, Roberto; Goto, Takashi; Someno, Yoshihiro; Hirai, Toshio

    1994-03-01

    AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700 °C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.

  17. Vapor-liquid-solid growth route to AlN nanowires on Au-coated Si substrate by direct nitridation of Al powder

    NASA Astrophysics Data System (ADS)

    Yu, Leshu; Lv, Yingying; Zhang, Xiaolan; Zhang, Yiyue; Zou, Ruyi; Zhang, Fan

    2011-11-01

    In the past several decades vapor-liquid-solid (VLS) growth mechanism has been used for constructing one dimensional (1D) AlN nanostructures though the clear observation of metallic catalyst particles on top of individual 1D nanostructure is rare. Using Au thin film on Si substrate as metallic catalyst, fine AlN nanowires were grown through the nitridation of Al powder in this study. The systematic characterizations including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX) have confirmed the existence of metallic catalyst particles on the top of each AlN nanowire. Therefore the AlN nanowires growth is indeed accomplished via VLS process. The VLS-generated conditions including thickness of Au film and reaction temperature were also explored for the growth of AlN nanowires. Incidentally some other AlN nanostructures such as faceted cross-sectional nanorods, nanobelt and nanocomb were also obtained via vapor-solid growth mechanism on the Si substrate.

  18. Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

    PubMed Central

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Wang, Haiyan; Wen, Lei; Li, Guoqiang

    2015-01-01

    High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained by PLD have been systemically studied. It is found that the amorphous SiAlN interfacial layer is formed during high temperature growth, which is ascribed to the serious interfacial reactions between Si atoms diffused from the substrates and the AlN plasmas produced by the pulsed laser when ablating the AlN target during the high temperature growth. On the contrary, abrupt and sharp AlN/Si hetero-interfaces can be achieved by effectively controlling the interfacial reactions at suitable growth temperature. The mechanisms for the evolution of interfacial layer from the amorphous SiAlN layer to the abrupt and sharp AlN/Si hetero-interfaces by PLD are hence proposed. This work of obtaining the abrupt interfaces and the flat surfaces for AlN films grown by PLD is of paramount importance for the application of high-quality AlN-based devices on Si substrates. PMID:26089026

  19. Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Yasui, Daiki; Tamaki, Shinya; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-05-01

    Single-crystal a-plane AlN(11\\bar{2}0) films were grown on r-plane sapphire (1\\bar{1}02) substrates by hydride vapor phase epitaxy (HVPE). We performed the optimization of thermal cleaning and nitridation conditions for r-plane sapphire substrates, and investigated the effect of ammonia (NH3) preflow on the crystallinity of a-plane AlN. An r-plane sapphire substrate with uniformly straight atomic steps was formed at 1000 °C, and NH3 preflow was subsequently supplied. The growth mode of a-plane AlN was promoted to be three-dimensional (3D) growth by the nitridation of r-plane sapphire substrates, and sizes of 3D islands were modified by changing the NH3 preflow time. The crystallinity of a-plane AlN films was improved by varying the NH3 preflow time from 30 to 90 s. The optimum crystal quality of a-plane AlN films was obtained with NH3 preflow for 30 s.

  20. Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Jin, Hao; Feng, Bin; Dong, Shurong; Zhou, Changjian; Zhou, Jian; Yang, Yi; Ren, Tianling; Luo, Jikui; Wang, Demiao

    2012-07-01

    Aluminum nitride (AlN) thin films with c-axis preferred orientation have been prepared by reactive direct-current (DC) magnetron sputtering. The degree of preferred crystal orientation, the cross-sectional structure, and the surface morphology of AlN thin films grown on Si (100) substrates at various substrate temperatures from 60°C to 520°C have been investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Results show that the substrate temperature has a significant effect on the structural properties, such as the degree of c-axis preferred orientation, the full-width at half-maximum (FWHM) of the rocking curve, the surface morphology, and the cross-sectional structure as well as the deposition rate of the AlN thin films. The optimal substrate temperature is 430°C, with corresponding root-mean-square surface roughness ( R rms) of 1.97 nm, FWHM of AlN (002) diffraction of 2.259°, and deposition rate of 20.86 nm/min. The mechanisms behind these phenomena are discussed. Finally, film bulk acoustic resonators based on AlN films were fabricated; the corresponding typical electromechanical coupling coefficient ( k {t/2}) is 5.1% with series and parallel frequencies of 2.37 GHz and 2.42 GHz, respectively.

  1. Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

    NASA Astrophysics Data System (ADS)

    Bernard, F.; Casset, F.; Danel, J. S.; Chappaz, C.; Basrour, S.

    2016-08-01

    This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm2. Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system.

  2. Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature

    SciTech Connect

    Im, Inho; Jung, Mina; Koo, Jieun; Lee, Hyunjae; Park, Jinsub; Minegishi, Tsutomu; Park, Seunghwan; Fujii, Katsushi; Yao, Takafumi; Kil, Gyungsuk; Hanada, Takashi; Chang, Jiho

    2010-01-15

    The authors investigated the evolution of surface morphology of AlN films grown on ZnO substrates at low temperature (LT) (400 deg. C) as a function of anion/cation supplying ratio (V/III ratio). Unlike the well-known favorable growth conditions for high-temperature growth, smooth-surface LT-AlN layers were obtained under the O-polar surface, stoichiometric, and N-rich conditions. LT-AlN layers revealed smooth surface (roughness in root mean square=0.20 nm for AlN on O-polar ZnO and 0.44 nm for AlN on Zn-polar ZnO) and quite low etch-pit density ({approx}2x10{sup 6} cm{sup -2} for AlN/Zn-polar ZnO).

  3. Growth of wurtzite and zinc-blende phased GaN on silicon (100) substrate with sputtered AlN buffer layer

    NASA Astrophysics Data System (ADS)

    Pang, Wen-Yuan; Lo, Ikai; Wu, Sean; Lin, Zhi-Xun; Shih, Cheng-Hung; Lin, Yu-Chiao; Wang, Ying-Chieh; Hu, Chia-Hsuan; Hsu, Gary Z. L.

    2013-11-01

    GaN films were grown by plasma-assisted molecular beam epitaxy with a sputtered AlN buffer layer on Si (100) substrate. From the analyses of X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) measurements, we showed that the variant M-plane, A-plane and c-plane GaN wurtzite structures can be achieved by the selection of crystalline orientation of sputtered AlN buffer layer and the control of epitaxial growth temperature. We also found that the GaN layer grown on sputtered AlN buffer layer can be converted to GaN zinc-blende structure at the epitaxial growth temperature higher than 750 °C and under Ga-rich condition.

  4. Analysis of surface and material modifications caused by laser drilling of AlN ceramics

    NASA Astrophysics Data System (ADS)

    Nedialkov, N.; Sawczak, M.; Jendrzejewski, R.; Atanasov, P.; Martin, M.; Śliwiński, G.

    2007-12-01

    For the laser drilling of aluminum nitride ceramic the processing results and the effects related to pulsed irradiation were investigated. Images of the drilled surface revealed regular, cylindrically shaped holes of about 100 μm in diameter independently of the laser wavelength (1064/532/355 or 266 nm). The holes were surrounded by circular heat-affected zones of larger diameter. A comparison of the elemental compositions of the original material and the processed one indicated a decrease of the nitrogen concentration in the affected area. The spectral analysis of the ablated material composition revealed the presence of ions and neutrals in dependence on the laser intensity applied. It was found that at intensity values close to the ablation threshold the ejected material consisted mainly of neutrals, while doubling of the intensity resulted in appearance of single-ionized Al species, which were also observed together with Al clusters in the mass spectra of the UV-excited plasma. Their prevailing content was revealed for drilling at higher intensities around 15 GW/cm 2 at 532 nm. Results of model calculations indicated, in agreement with the experiment, that at the threshold the ceramic decomposes into gaseous nitrogen and solid Al particulates, while at a higher fluence the material particles vaporize and influence the quality of drilling.

  5. Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Xiao-Hang; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Fischer, Alec M.; Ponce, Fernando A.

    2015-03-01

    We studied temperature dependence of crystalline quality of AlN layers at 1050-1250 °C with a fine increment step of around 18 °C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068 °C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086 °C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 °C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 °C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 °C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086 °C which is accessible by most of the III-nitride MOCVD systems.

  6. Thermal contact conductance of ceramic AlN and oxygen-free high-conductivity copper interfaces under low temperature and vacuum for high-temperature superconducting cryocooler cooling

    NASA Astrophysics Data System (ADS)

    Wang, Jian; Wang, Huiling; Zhuang, Hanrui

    2006-02-01

    In this article, a device for measuring thermal contact conductance under low temperature and vacuum for cryocooler cooling in high-temperature superconducting (HTS) system is presented. Such device may be used to simulate the real running condition of HTS equipments cooled by cryocooler. It is also convenient for temperature controlling. The thermal conductivity of ceramic AlN and the thermal contact conductance (TCC) between AlN and oxygen-free high-conductivity copper for the temperature range of 45-140 K and the vacuum range of 10-3-10-4Pa have been measured using axial steady heat-flow method on the Giffard-McMahon cryocooler with 5 W (20 K) capacity. Investigation shows that the TCC of the AlN /Cu interface increases as the temperature and the pressure load of contact interface increase, and the conductivity of ceramic AlN increases as temperature rises. An analysis based on micro- and nanocryogenic concepts is made to explain the behaviors of thermal conductivity for AlN and thermal contact conductance for the AlN /Cu interface.

  7. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

    SciTech Connect

    Mizerov, A. M. Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu.

    2015-02-15

    The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.

  8. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

    PubMed Central

    2014-01-01

    The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 × 107 cm−2 to 2.6 × 107 cm−2. Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer. PMID:25258616

  9. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  10. Ceramic barrier layers for flexible thin film solar cells on metallic substrates: a laboratory scale study for process optimization and barrier layer properties.

    PubMed

    Delgado-Sanchez, Jose-Maria; Guilera, Nuria; Francesch, Laia; Alba, Maria D; Lopez, Laura; Sanchez, Emilio

    2014-11-12

    Flexible thin film solar cells are an alternative to both utility-scale and building integrated photovoltaic installations. The fabrication of these devices over electrically conducting low-cost foils requires the deposition of dielectric barrier layers to flatten the substrate surface, provide electrical isolation between the substrate and the device, and avoid the diffusion of metal impurities during the relatively high temperatures required to deposit the rest of the solar cell device layers. The typical roughness of low-cost stainless-steel foils is in the hundred-nanometer range, which is comparable or larger than the thin film layers comprising the device and this may result in electrical shunts that decrease solar cell performance. This manuscript assesses the properties of different single-layer and bilayer structures containing ceramics inks formulations based on Al2O3, AlN, or Si3N4 nanoparticles and deposited over stainless-steel foils using a rotogravure printing process. The best control of the substrate roughness was achieved for bilayers of Al2O3 or AlN with mixed particle size, which reduced the roughness and prevented the diffusion of metals impurities but AlN bilayers exhibited as well the best electrical insulation properties. PMID:25296706

  11. Deposition of AlN Thin Films with Cubic Crystal Structures on Silicon Substrates at Room Temperature

    NASA Astrophysics Data System (ADS)

    Ren, Zhong-Min; Lu, Yong-Feng; Goh, Yeow-Whatt; Chong, Tow-Chong; Ng, Mei-Ling; Wang, Jian-Ping; Cheong, Boon-Aik; Liew, Yun-Fook

    2000-05-01

    Cubic AlN thin films were deposited at room temperature by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target. The full-width at half maximum (FWHM) of the X-ray diffraction peak in the θ˜ 2θ scan can reach a value of 0.27 degrees. In the Raman spectroscopy measurement, a new peak at 2333 cm-1 originating from cubic AlN polycrystalline was observed. Nitrogen ions not only effectively promote the formation of stable Al-N bonds but also improve the crystal properties of the deposited thin films. A nitrogen ion energy of 400 eV is proposed for the thin-film deposition.

  12. Mo-Si-B-Based Coatings for Ceramic Base Substrates

    NASA Technical Reports Server (NTRS)

    Perepezko, John Harry (Inventor); Sakidja, Ridwan (Inventor); Ritt, Patrick (Inventor)

    2015-01-01

    Alumina-containing coatings based on molybdenum (Mo), silicon (Si), and boron (B) ("MoSiB coatings") that form protective, oxidation-resistant scales on ceramic substrate at high temperatures are provided. The protective scales comprise an aluminoborosilicate glass, and may additionally contain molybdenum. Two-stage deposition methods for forming the coatings are also provided.

  13. Increased upper critical field for nanocrystalline MoN thin films deposited on AlN buffered substrates at ambient temperature

    NASA Astrophysics Data System (ADS)

    Baskaran, R.; Thanikai Arasu, A. V.; Amaladass, E. P.; Vaidhyanathan, L. S.; Baisnab, D. K.

    2016-05-01

    Molybdenum nitride (MoN) thin films have been deposited using reactive DC magnetron sputtering on aluminum nitride buffered oxidized silicon substrates at ambient temperature. GIXRD of aluminum nitride (AlN) deposited under similar conditions has revealed the formation of wurtzite phase AlN. GIXRD characterization of molybdenum thin films deposited on AlN buffered oxidized silicon substrates has indicated the formation of nanocrystalline MoN thin films. The electrical resistivity measurements indicate MoN thin films have a superconducting transition temperature of ~8 K. The minimum transition width of the MoN thin film is 0.05 K at 0 T. The inferred upper critical field B c2(0) for these nanocrystalline MoN thin films obtained by fitting the temperature dependence of critical field with Werthamer, Helfand and Hohenberg theory lies in the range of 17–18 T which is the highest reported in literature for MoN thin films.

  14. Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates

    SciTech Connect

    Chandrasekaran, R.; Moustakas, T. D.; Ozcan, A. S.; Ludwig, K. F.; Zhou, L.; Smith, David J.

    2010-08-15

    This paper reports the growth by molecular beam epitaxy of AlN and GaN thin films on R-plane sapphire substrates. Contrary to previous findings that GaN grows with its (1120) A-plane parallel to the (1102) R-plane of sapphire, our results indicate that the crystallographic orientation of the III-nitride films is strongly dependent on the kinetic conditions of growth for the GaN or AlN buffer layers. Thus, group III-rich conditions for growth of either GaN or AlN buffers result in nitride films having (1120) planes parallel to the sapphire surface, and basal-plane stacking faults parallel to the growth direction. The growth of these buffers under N-rich conditions instead leads to nitride films with (1126) planes parallel to the sapphire surface, with inclined c-plane stacking faults that often terminate threading dislocations. Moreover, electron microscope observations indicate that slight miscut ({approx}0.5 deg. ) of the R-plane sapphire substrate almost completely suppresses the formation of twinning defects in the (1126) GaN films.

  15. Short-period superlattices of AlN/Al{sub 0.08}Ga{sub 0.92}N grown on AlN substrates

    SciTech Connect

    Nikishin, S.A.; Borisov, B.A.; Chandolu, A.; Kuryatkov, V.V.; Temkin, H.; Holtz, M.; Mokhov, E.N.; Makarov, Yu.; Helava, H.

    2004-11-08

    High-quality short-period superlattices of AlN/Al{sub 0.08}Ga{sub 0.92}N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3x10{sup 8} cm{sup -2}. Complete removal of residual Al{sub 2}O{sub 3} surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al{sub 2}O{sub 3} islands with the surface coverage as low as 0.2% results in increased dislocation density.

  16. Sol-gel derived ceramic electrolyte films on porous substrates

    SciTech Connect

    Kueper, T.W.

    1992-05-01

    A process for the deposition of sol-gel derived thin films on porous substrates has been developed; such films should be useful for solid oxide fuel cells and related applications. Yttria-stabilized zirconia films have been formed from metal alkoxide starting solutions. Dense films have been deposited on metal substrates and ceramic substrates, both dense and porous, through dip-coating and spin-coating techniques, followed by a heat treatment in air. X-ray diffraction has been used to determine the crystalline phases formed and the extent of reactions with various substrates which may be encountered in gas/gas devices. Surface coatings have been successfully applied to porous substrates through the control of substrate pore size and deposition parameters. Wetting of the substrate pores by the coating solution is discussed, and conditions are defined for which films can be deposited over the pores without filling the interiors of the pores. Shrinkage cracking was encountered in films thicker than a critical value, which depended on the sol-gel process parameters and on the substrate characteristics. Local discontinuities were also observed in films which were thinner than a critical value which depended on the substrate pore size. A theoretical discussion of cracking mechanisms is presented for both types of cracking, and the conditions necessary for successful thin formation are defined. The applicability of these film gas/gas devices is discussed.

  17. Controlled sputtering of AlN (002) and (101) crystal orientations on epitaxial 3C-SiC-on-Si (100) substrate

    NASA Astrophysics Data System (ADS)

    Iqbal, A.; Walker, G.; Iacopi, A.; Mohd-Yasin, F.

    2016-04-01

    Aluminum Nitride (AlN) thin films are successfully deposited on epitaxial 3C-SiC-on-Si (100) substrates using DC magnetron sputterer. The sputtered films are characterized on the following parameters: crystal orientations (Siemens D500 X-Ray diffraction tool), deposition rate (Nanospec AFT 180), surface roughness (Park NX20 Atomic Force Microscopy), refractive index (Rudolph AutoEL IV Ellipsometer), in-plane stress (Tencor Flexus 2320 System) and Raman Spectra (Rennishaw InVia Spectrometer). XRD results demonstrate that the orientation of the AlN thin films can be changed from (002) to (101) by increasing the Nitrogen to Argon ratio from 40% to 80% at the total gas flow of 50 sccm. We are also able to tune the in-plane stress via RF biasing on the substrate. Both controlling abilities enable the applications of these thin films for low cost longitudinal piezoelectric devices and a quasi-shear mode devices using (002) and (101) orientations, respectively.

  18. Bonding strength of glass-ceramic trabecular-like coatings to ceramic substrates for prosthetic applications.

    PubMed

    Chen, Qiang; Baino, Francesco; Pugno, Nicola M; Vitale-Brovarone, Chiara

    2013-04-01

    A new approach based on the concepts of quantized fracture mechanics (QFM) is presented and discussed in this paper to estimate the bonding strength of trabecular-like coatings, i.e. glass-ceramic scaffolds mimicking the architecture of cancellous bone, to ceramic substrates. The innovative application of glass-derived scaffolds as trabecular-like coatings is proposed in order to enhance the osteointegration of prosthetic ceramic devices. The scaffolds, prepared by polymeric sponge replication, are joined to alumina substrates by a dense glass-ceramic coating (interlayer) and the so-obtained 3-layer constructs are investigated from micro-structural, morphological and mechanical viewpoints. In particular, the fracture strengths of three different crack propagation modes, i.e. glass-derived scaffold fracture, interface delamination or mixed fracture, are predicted in agreement with those of experimental mechanical tests. The approach proposed in this work could have interesting applications towards an ever more rational design of bone tissue engineering biomaterials and coatings, in view of the optimization of their mechanical properties for making them actually suitable for clinical applications. PMID:23827605

  19. Laser Welding of Alumina Ceramic Substrates with Two Fixed Beams

    NASA Astrophysics Data System (ADS)

    Sedore, Blake William Clark

    Laser welding was investigated as a potential joining technology for alumina ceramic substrates. The objective of this study was to develop a method to preheat the ceramic using a single defocused laser beam prior to welding. Engineering ceramics are employed in a variety of systems and environments due to their unique properties. Joining technologies must be developed to facilitate the manufacture of complex or large ceramic components. Laser welding is advantageous as it forms joints rapidly, and does not introduce intermediate materials to form the bond, which can have deleterious effects. The Laser Machining System (LMS) at Queen's University was adapted for this study. A defocused far-infrared (FIR) laser beam was positioned to overlay a focused near-infrared (NIR) laser beam; the defocused FIR beam preheated the ceramic substrate and the focused NIR beam formed the weld. A finite element model was developed in COMSOL MultiPhysics to simulate the preheating processes and to develop a preheating protocol. The protocol was implemented using the FIR beam and adjusted to achieve preheating temperatures of 1450, 1525, and 1600°C. Welds were performed on 1 mm thick alumina plates using the preheating protocols and NIR beam powers of 25, 50, and 75 W. Weld speed was held constant throughout the study at 0.5 mm/s. The preheating protocols were successful at achieving near-constant preheating temperatures, with standard deviations below 32 degrees. Partially penetrating welds were formed with the NIR beam at 25 W, and fully penetrating welds at 50 and 75 W. Large pores were present in the 25 W and 50 W welds. Minimal porosity was observed in the welds formed at 75 W. All of the welded plates experienced a transverse fracture that extended perpendicular to weld, and a longitudinal fracture extending parallel to the weld. This study shows that a fixed defocused laser beam can successfully preheat alumina substrates to the high temperatures required for welding; however

  20. Hot Films on Ceramic Substrates for Measuring Skin Friction

    NASA Technical Reports Server (NTRS)

    Noffz, Greg; Leiser, Daniel; Bartlett, Jim; Lavine, Adrienne

    2003-01-01

    Hot-film sensors, consisting of a metallic film on an electrically nonconductive substrate, have been used to measure skin friction as far back as 1931. A hot film is maintained at an elevated temperature relative to the local flow by passing an electrical current through it. The power required to maintain the specified temperature depends on the rate at which heat is transferred to the flow. The heat transfer rate correlates to the velocity gradient at the surface, and hence, with skin friction. The hot-film skin friction measurement method is most thoroughly developed for steady-state conditions, but additional issues arise under transient conditions. Fabricating hot-film substrates using low-thermal-conductivity ceramics can offer advantages over traditional quartz or polyester-film substrates. First, a low conductivity substrate increases the fraction of heat convected away by the fluid, thus increasing sensitivity to changes in flow conditions. Furthermore, the two-part, composite nature of the substrate allows the installation of thermocouple junctions just below the hot film, which can provide an estimate of the conduction heat loss.

  1. Computational modeling of thin ceramic tiles backed by thin substrates

    SciTech Connect

    Walker, J.D.; Anderson, C.E. Jr.; Cox, P.A.

    1995-12-31

    Building on the work of Wilkins, Eulerian hydrocode calculations were performed with ceramic models to examine the behavior of thin ceramic tiles backed by a thin substrate. In order to match ballistic limit data it was necessary to include a pressure dependent flow stress for failed ceramic. Reasonable agreement is found between the modified model and ballistic limit data for a simulated armor piercing round impacting an AD-85 alumina/6061T6 aluminum laminate. Based upon this success, the modified model was used to examine the performance of a SiC/6061T6 aluminum laminate when impacted by an M80 ball round (7.62 mm) at muzzle velocity. The projectile undergoes large deformation, as does the aluminum backing sheet. The computational results indicate, for the M80 projectile impacting at muzzle velocity, that the ballistic limit thickness for the SiC/aluminum laminate should weigh 10% less than the ballistic limit thickness for steel. The talk will include a video tape of calculations.

  2. Microstrip Gas Chambers on glass and ceramic substrates

    SciTech Connect

    Gong, W.G.; Wieman, H.; Harris, J.W.; Mitchell, J.T.; Hong, W.S.; Perez-Mendez, V.

    1993-11-01

    We report developments of Microstrip Gas Chambers (MSGC) fabricated on glass and ceramic substrates with various resistivities. Low resistivity of the substrate is found to be critical for achieving stable operation of microstrip gas chambers. The microstrip pattern consists of 10 {mu}m wide anodes and 90 {mu}m wide cathodes with a 200 {mu}m anode-to-anode pitch. High-quality microstrips are fabricated using the dry etch after UV-photolithography. Our chambers are tested in an Ar(90)-CH{sub 4}(10) gas mixture at atmospheric pressure with a 100 {mu}Ci {sup 55}Fe source. An energy resolution (FWHM) of 15% has been achieved for 6 keV soft X-rays. At a rate of 5 {times} 10{sup 4} photons/sec/mm{sup 2}, gas gains are stable within a few percents. Long-term tests of gain stability and rate capability are yet to be pursued.

  3. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

    NASA Astrophysics Data System (ADS)

    Christy, Dennis; Watanabe, Arata; Egawa, Takashi

    2014-10-01

    The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

  4. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

    SciTech Connect

    Christy, Dennis; Watanabe, Arata; Egawa, Takashi

    2014-10-15

    The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

  5. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xenogiannopoulou, E.; Tsipas, P.; Aretouli, K. E.; Tsoutsou, D.; Giamini, S. A.; Bazioti, C.; Dimitrakopulos, G. P.; Komninou, Ph.; Brems, S.; Huyghebaert, C.; Radu, I. P.; Dimoulas, A.

    2015-04-01

    Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The successful growth of high-quality MoSe2/Bi2Se3 multilayers on AlN shows promise for novel devices exploiting the non-trivial topological properties of Bi2Se3.Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The

  6. Structural Analysis and Infrared Emission from Ti+3 Doped AlN Deposited on Si(100) and Si(111) Substrates and Optical Fibers

    NASA Astrophysics Data System (ADS)

    Maqbool, Muhammad; Main, Kyle; Ahmad, Iftikhar

    2015-06-01

    Thin films of AlN doped with Titanium are deposited on Si(100) and Si(111) substrates and optical fibers at liquid nitrogen temperature by rf-magnetron sputtering. Thickness of the films is 400 nm on both silicon substrates and optical fibers. X-ray diffraction studies show that films deposited on both Si(100) and Si(111) substrate are amorphous, and those deposited on optical fibers are crystalline under the same conditions. The results indicate that low temperature is not the only requirement to grow amorphous films but the size and shape of substrate also affect the structure and morphology of a thin film material. X-Ray Fluorescence and Photoluminescence of the as-deposited AlN:Ti films report an emission peak at 781 nm as a result of 4T2 4A2 transition. A relatively less intense emission is also observed at 785 nm. The fluorescence emission from Ti+3 is proved to be isotropic.

  7. Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

    SciTech Connect

    Smalc-Koziorowska, Julita; Sawicka, Marta; Skierbiszewski, Czeslaw; Grzegory, Izabella

    2011-08-08

    We study the mismatch relaxation of 2-5 nm thin elongated AlN islands formed during growth of AlGaN on bulk m-plane GaN by molecular beam epitaxy. The relaxation of these m-plane AlN layers is anisotropic and occurs through the introduction of stacking faults in [0001] planes during island coalescence, while no relaxation is observed along the perpendicular [1120] direction. This anisotropy in the mismatch relaxation and the formation of stacking faults in the AlN islands are explained by the growth mode of the AlN platelets and their coalescence along the [0001] direction.

  8. Characterization of the Microstructure of an AlN-Mullite-Al2O3 Ceramic Layer on WCu Composite Alloy for Microelectronic Application

    NASA Astrophysics Data System (ADS)

    Zhu, Jiandong; An, Rong; Wang, Chunqing; Zhang, Wei; Wen, Guangwu

    2015-11-01

    An AlN composite ceramic layer was designed and fabricated on WCu substrates by hydrolysis-assisted solidification and firing. First, the surface of WCu substrates were pre-coated with polycarbosilane/AlN ceramic layers by spinning; the layers were then fabricated by firing. The phase composition, microstructure, and element distribution of the ceramic layer and interfacial reaction layer were investigated by use of scanning electron microscopy, energy-dispersive spectroscopy and x-ray diffraction. The results showed that the ceramic layers were composed of AlN, mullite, and Al2O3. There were many nanocrystalline rods on the surface of the ceramic layers. The Cr layer prevented the WCu substrate from reacting with water vapor during firing, and the Ni layer prevented diffusion of tungsten into the Cr layer. Study of the cross section of the ceramic layer fired on the Cr/Ni/WCu substrate revealed a perfect interfacial reaction layer.

  9. Thin-film solar cells on perlite glass-ceramic substrates

    NASA Astrophysics Data System (ADS)

    Petrosyan, Stepan G.; Babayan, Virab H.; Musayelyan, Ashot S.; Harutyunyan, Levon A.; Zalesski, Valery B.; Kravchenko, Vladimir M.; Leonova, Tatyana R.; Polikanin, Alexander M.; Khodin, Alexander A.

    2013-06-01

    For the first time, thin-film CIGS solar cells have been fabricated by co-evaporation on specially developed non-conducting perlite (an aluminum potassium sodium silicate natural mineral of volcanic origin) glass-ceramic substrates to develop a fully integrated photovoltaic and building element. Such glass-ceramic material can meet the physical requirements to solar cells substrates as well as the cost goals. The preliminary data presented show that CIGS solar cells deposited on ceramic substrates can exhibit efficiency higher than 10%.

  10. Plasma-Spraying Ceramics Onto Smooth Metallic Substrates

    NASA Technical Reports Server (NTRS)

    Miller, Robert A.; Brindley, William J.; Rouge, Carl J.; Leissler, George

    1992-01-01

    In fabrication process, plasma-sprayed ceramic coats bonded strongly to smooth metallic surfaces. Principal use of such coats in protecting metal parts in hot-gas paths of advanced gas turbine engines. Process consists of application of initial thin layer of ceramic on smooth surface by low-pressure-plasma spraying followed by application of layer of conventional, low-thermal-conductivity atmospheric-pressure plasma-sprayed ceramic.

  11. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Mita, Seiji; Tweedie, James

    2015-06-08

    Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using k•p theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245 nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.

  12. DLC and AlN thin films influence the thermal conduction of HPLED light

    NASA Astrophysics Data System (ADS)

    Hsu, Ming Seng; Hsu, Ching Yao; Huang, Jen Wei; Shyu, Feng Lin

    2015-08-01

    Thermal dissipation had an important influence in the effect and life of light emitting diodes (LED) because it enables transfer the heat away from electric device to the aluminum plate that can be used for heat removal. In the industrial processing, the quality of the thermal dissipation decides by the gumming technique between the PCB and aluminum plate. In this study, we fabricated double layer ceramic thin films of diamond like carbon (DLC) and alumina nitride (AlN) by vacuum sputtering soldered the substrate of high power light emitting diodes (HPLED) light to check the heat conduction. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray photoelectron spectroscopy (XPS) patterns reveal those ceramic phases were successfully grown onto the substrate. The work temperatures show DLC and AlN films coating had limited the heat transfer by the lower thermal conductivity of these ceramic films. Obviously, it hadn't transferred heat and limited work temperature of HPLED better than DLC thin film only.

  13. MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

    NASA Astrophysics Data System (ADS)

    Marini, Jonathan; Leathersich, Jeffrey; Mahaboob, Isra; Bulmer, John; Newman, Neil; (Shadi) Shahedipour-Sandvik, F.

    2016-05-01

    We report on the impact of growth conditions on surface hillock density of N-polar GaN grown on nominally on-axis (0001) sapphire substrate by metal organic chemical vapor deposition (MOCVD). Large reduction in hillock density was achieved by implementation of an optimized high temperature AlN nucleation layer and use of indium surfactant in GaN overgrowth. A reduction by more than a factor of five in hillock density from 1000 to 170 hillocks/cm-2 was achieved as a result. Crystal quality and surface morphology of the resultant GaN films were characterized by high resolution x-ray diffraction and atomic force microscopy and found to be relatively unaffected by the buffer conditions. It is also shown that the density of smaller surface features is unaffected by AlN buffer conditions.

  14. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy.

    PubMed

    Xenogiannopoulou, E; Tsipas, P; Aretouli, K E; Tsoutsou, D; Giamini, S A; Bazioti, C; Dimitrakopulos, G P; Komninou, Ph; Brems, S; Huyghebaert, C; Radu, I P; Dimoulas, A

    2015-05-01

    Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The successful growth of high-quality MoSe2/Bi2Se3 multilayers on AlN shows promise for novel devices exploiting the non-trivial topological properties of Bi2Se3. PMID:25856730

  15. Experimental Evaluation of Hot Films on Ceramic Substrates for Skin-Friction Measurement

    NASA Technical Reports Server (NTRS)

    Noffz, Gregory K.; Lavine, Adrienne S.; Hamory, Philip J.

    2003-01-01

    An investigation has been performed on the use of low-thermal conductivity, ceramic substrates for hot films intended to measure skin friction. Hot films were deposited on two types of ceramic substrates. Four hot films used composite-ceramic substrates with subsurface thermocouples (TCs), and two hot films were deposited on thin Macor(R) substrates. All six sensors were tested side by side in the wall of the NASA Glenn Research Center 8-ft by 6-ft Supersonic Wind Tunnel (SWT). Data were obtained from zero flow to Mach 1.98 in air. Control measurements were made with three Preston tubes and two boundary-layer rakes. The tests were repeated at two different hot film power levels. All hot films and subsurface TCs functioned throughout the three days of testing. At zero flow, the films on the high-thermal conductivity Macor(R) substrates required approximately twice the power as those on the composite-ceramic substrates. Skin-friction results were consistent with the control measurements. Estimates of the conduction heat losses were made using the embedded TCs but were hampered by variability in coating thicknesses and TC locations.

  16. Infrared wire-grid polarizer with Y2O3 ceramic substrate.

    PubMed

    Yamada, Itsunari; Fukumi, Kouhei; Nishii, Junji; Saito, Mitsunori

    2010-09-15

    Using two-beam interference lithography and dry etching, we fabricated a mid-IR wire-grid polarizer consisting of a 350 nm pitch WSi grating on an Y(2)O(3) ceramic substrate, which has wider transparency than sapphire. The transmittance of TM polarization was greater than 70% in the 3-7 μm wavelength range without antireflection films, and the extinction ratio was over 20 dB in the 2.5-5 μm wavelength range. The wire-grid polarizer with the Y(2)O(3) ceramic substrate provides high durability and good IR transparency. PMID:20847795

  17. Nanopore fabrication by heating Au particles on ceramic substrates.

    PubMed

    de Vreede, Lennart J; van den Berg, Albert; Eijkel, Jan C T

    2015-01-14

    We found that gold nanoparticles, when heated to close to their melting point on substrates of amorphous SiO2 or amorphous Si3N4, move perpendicularly into the substrate. Dependent on applied temperatures, particles can become buried or leave nanopores of extreme aspect ratio (diameter ≅ 25 nm, length up to 800 nm). The process can be understood as driven by gold evaporation and controlled by capillary forces and can be controlled by temperature programming and substrate choice. PMID:25548953

  18. () preferential orientation of polycrystalline AlN grown on SiO2/Si wafers by reactive sputter magnetron technique

    NASA Astrophysics Data System (ADS)

    Bürgi, Juan; García Molleja, Javier; Bolmaro, Raúl; Piccoli, Mattia; Bemporad, Edoardo; Craievich, Aldo; Feugeas, Jorge

    2016-04-01

    Aluminum nitride (AlN) is a ceramic compound that could be used as a processing material for semiconductor industry. However, the AlN crystalline structure plays a crucial role in its performance. In this paper, polycrystalline AlN films have been grown onto Si(1 1 1) and Si(1 0 0) (with an oxide native coverage of SiO2) wafers by RSM (reactive sputter magnetron) technique using a small (5 L) reactor. The development of polycrystalline AlN films with a good texture along () planes, i.e., semi-polar structure, was shown. Analyses were done using X-ray diffraction in the Bragg-Brentano mode and in the GIXRD (grazing incidence X-ray diffraction) one, and the texture was determined through pole figures. The structure and composition of these films were also studied by TEM and EDS techniques. Nevertheless, the mapping of the magnetic field between the magnetron and the substrate has shown a lack of symmetry at the region near the substrate. This lack of symmetry can be attributable to the small dimensions of the chamber, and the present paper suggests that this phenomenon is the responsible for the unusual () texture developed.

  19. Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

    SciTech Connect

    Cicek, E.; McClintock, R.; Cho, C. Y.; Rahnema, B.; Razeghi, M.

    2013-10-28

    We report on Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced ∼8.5 μm AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 μm{sup 2} area PD showed unbiased peak external quantum efficiency and responsivity of ∼7% and 18.3 mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 × 10{sup −8} A/cm{sup 2} at 10 V reverse bias.

  20. Absorption of organic compounds and organometallics on ceramic substrates for wear reduction

    SciTech Connect

    Kennedy, P.J.; Agarwala, V.S.

    1996-12-31

    The concept of employing thermally stable compounds (that is, metal oxides) as high temperature vapor phase ceramic lubricants was investigated. A major part of this study was devoted to the development of various calorimetric and tribological techniques that could be used to determine interfacial reactions between thermally stable compounds and ceramic substrates such as zirconia and alumina. This interaction is pivotal in understanding the mechanism of high temperature lubricity. The approach consisted of selecting low sublimation temperature materials and measuring their thermodynamic interactions as vapors with the ceramic substrates. The materials studied included two easily sublimable organic compounds (that is, naphthalene and salicylic acid) and several organometallics (for example, copper phthalocyanine). Thermodynamic data such as heat of adsorption, packing density, and reversibility of the adsorption were obtained on some of these compounds and were related to wear characteristics. All of these compounds provided effective lubrication at room temperature. Copper phthalocyanine was an effective lubricant at temperatures up to 400 C.

  1. Nanoparticle-decorated ceramic as substrate in surface enhanced Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Nedyalkov, N.; Nikov, Ru.; Koleva, M.; Atanasov, P. A.; Constantinescu, C.; Delaporte, Ph.; Grojo, D.

    2015-05-01

    Laser-assisted method for fabrication of nanoparticles on the surface of ceramic substrate is presented. The method is based on laser dewetting of thin metal film deposited on the substrate. Using this technique, gold nanoparticles on alumina ceramic surface are fabricated. It is shown that the processing parameters can influence the properties of the fabricated structure, as at certain conditions a homogeneous cover of nanoparticles with narrow size distribution can be achieved. The processed surfaces are tested as substrates in surface enhanced Raman spectroscopy of a standard dye. The efficiency of the substrates is estimated by the ability of detection of the dye at nM concentration and it is compared to that of thin gold film on ceramic substrate. The strongest enhancement is observed for the sample where Au film is not completely decomposed and the structure consists of thin film and nanoparticles aggregates. The proposed method has potential application in fabrication of cheap and reliable substrates for Raman spectroscopy analysis with high sensitivity and also in catalysis.

  2. Structure of nanocrystalline arc-PVD (Ti, Al)N coatings modified with nickel

    NASA Astrophysics Data System (ADS)

    Blinkov, I. V.; Belov, D. S.; Volkhonskii, A. O.; Blinkov, V. I.; Shatalov, R. L.

    2015-05-01

    The introduction of nickel into the composition of ion-plasma vacuum-arc (Ti, Al)N coatings refines nitride-phase crystallites from 100-120 to 15-18 nm when the nickel content is varied from zero to 12 at %. The size of nitride blocks is in agreement with that of ceramic-phase grains. Some (Ti, Al)N grains grow with the nickel content up to 30-35 nm. The structure changes from columnar to equiaxed during modifying the (Ti, Al)N coatings with nickel. Nickel in a coating is in an amorphous state (detected by X-ray diffraction) when its content is no more than 12-13 at %. A further increase in its content leads to the formation of the TiNi intermetallic compound, which results in structure porosity in the deposited coating. A transition zone forms at the boundary between a (Ti, Al)N-Ni coating and the VK6-alloy substrate, which is characterized by an element concentration gradient from the coating to the substrate and vice versa.

  3. Magnesium diboride films on metallic and ceramic substrates

    NASA Astrophysics Data System (ADS)

    Auinger, M.; Gritzner, G.

    2008-02-01

    A boron suspension in terpineol was applied to iron, titanium as well as to polycrystalline aluminium oxide, titanium dioxide and yttria doped zirconium dioxide substrates by screen printing. The samples were dried at 125 °C. The specimens were placed into a covered aluminium oxide crucible together with metallic magnesium. Conversion to magnesium diboride was carried out in an argon - hydrogen (6.5 vol-%) atmosphere under ambient pressure. Sintering temperature depended on the substrate chosen and varied between 750 °C and 950 °C. Dense and uniform MgB2-layers were obtained, showing transition temperatures of up to 38 K. Characterisation of the films was performed by X-ray diffraction, by scanning electron microscopy as well as by temperature - resistance measurements. Furthermore, technological applications of this technique will be discussed.

  4. Experimental investigation of the biaxial flexural strength of 8YSZ thin film ceramic substrates as electrolytes

    NASA Astrophysics Data System (ADS)

    Cheng, Ming

    Thin ceramic substrates are widely used in engineering applications in modern industry. For example, they are used as molecular filters in fuel cells and solid oxide electrolyzers for oxygen generation. Development of high-reliability substrate materials inevitably requires the accurate characterization of their mechanical properties. The loading conditions in service on the ceramic substrates, such as the solid oxide electrolytes with a thickness of much less than 2 mm, often involve multiaxial bending instead of simple tension or bending. In this dissertation, the ASTM standard piston-on-3-ball experimental technique at ambient temperature is employed to investigate the quasi-static biaxial flexural strength of pure 8YSZ and Al2O3 or 3YSZ doped 8YSZ ceramic substrates. Furthermore, this piston-on-3-ball experimental technique is developed into a dynamic piston-on-3-ball technique at ambient temperature and a quasi-static piston-on-3-ball technique at elevated temperatures. Stress distribution functions in the tensile surface of a specimen under piston-on-3-ball loading condition are formulated and used to develop statistical models, which are proven to be in the form of a Weibull distribution function, to describe the biaxial flexural strength behavior of ceramic substrates under piston-on-3-ball loading condition. Analytical modeling was conducted on the dynamic piston-on-3-ball loading configuration. This analytical model can be used to guide the experimental design and judge the validity of experimental results. A new material constitutive model is developed to give a good description of the dynamic strength behavior of ceramic materials under constant stress-rate loading. Quasi-static experiments under piston-on-3-ball loading are conducted at both ambient temperature and elevated temperatures, while dynamic experiments are conducted at ambient temperature. Experimental results, as well as observations from SEM microstructure images and values of fracture

  5. Thermal expansion compatibility of ceramic chip capacitors mounted on alumina substrates.

    NASA Technical Reports Server (NTRS)

    Allen, R. V.; Caruso, S. V.; Wilson, L. K.; Kinser, D. L.

    1972-01-01

    The thermal expansion coefficients of a representative sample of BaTiO3 and TiO2 ceramic chip capacitors and alumina substrates have been examined. These data have revealed large potential mechanical stresses under thermal cycling. A mathematical analysis of a composite model of the capacitor to predict the thermal expansion and modulus of elasticity and an analysis of the capacitor-substrate system to predict the magnitude of thermally induced stresses have been conducted. In all cases studied, thermally induced stresses great enough to cause capacitor body rupture or termination failure was predicted.

  6. Method of forming a dense, high temperature electronically conductive composite layer on a porous ceramic substrate

    DOEpatents

    Isenberg, Arnold O.

    1992-01-01

    An electrochemical device, containing a solid oxide electrolyte material and an electrically conductive composite layer, has the composite layer attached by: (A) applying a layer of LaCrO.sub.3, YCrO.sub.3 or LaMnO.sub.3 particles (32), on a portion of a porous ceramic substrate (30), (B) heating to sinter bond the particles to the substrate, (C) depositing a dense filler structure (34) between the doped particles (32), (D) shaving off the top of the particles, and (E) applying an electronically conductive layer over the particles (32) as a contact.

  7. Method of forming a dense, high temperature electronically conductive composite layer on a porous ceramic substrate

    DOEpatents

    Isenberg, A.O.

    1992-04-21

    An electrochemical device, containing a solid oxide electrolyte material and an electrically conductive composite layer, has the composite layer attached by: (A) applying a layer of LaCrO[sub 3], YCrO[sub 3] or LaMnO[sub 3] particles, on a portion of a porous ceramic substrate, (B) heating to sinter bond the particles to the substrate, (C) depositing a dense filler structure between the doped particles, (D) shaving off the top of the particles, and (E) applying an electronically conductive layer over the particles as a contact. 7 figs.

  8. SERS substrates fabricated using ceramic filters for the detection of bacteria

    NASA Astrophysics Data System (ADS)

    Mosier-Boss, P. A.; Sorensen, K. C.; George, R. D.; Obraztsova, A.

    2016-01-01

    SERS substrates were fabricated by filtering either Ag or Au colloidal particles onto rigid, ceramic filters - onto which suspensions of bacteria were then filtered. SERS spectra of the bacteria were obtained using a Raman spectrometer that has an 'orbital raster scan' capability. It was shown that bacteria samples prepared in this manner were uniformly distributed onto the surface of the SERS substrate. The effect of common buffer systems on the SERS spectra was investigated and the utility of using the SERS technique for speciation of bacteria was explored.

  9. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  10. KOH based selective wet chemical etching of AlN, Al{sub x}Ga{sub 1−x}N, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

    SciTech Connect

    Guo, W. Kirste, R.; Bryan, I.; Bryan, Z.; Hussey, L.; Reddy, P.; Collazo, R.; Sitar, Z.; Tweedie, J.

    2015-02-23

    A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and Al{sub x}Ga{sub 1−x}N (up to 12×) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations.

  11. KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

    SciTech Connect

    Guo, W; Kirste, R; Bryan, I; Bryan, Z; Hussey, L; Reddy, P; Tweedie, J; Collazo, R; Sitar, Z

    2015-02-23

    A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and AlxGa1-xN (up to 12 x) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations. (C) 2015 AIP Publishing LLC.

  12. Migration of elements in colour layers deposited on a ceramic substrate under the influence of laser treatment

    NASA Astrophysics Data System (ADS)

    Chmielewska, Danuta; Synowiec, Barbara; Olszyna, Andrzej; Marczak, Jan; Sarzyński, Antoni; Strzelec, Marek

    This paper summarizes the experimental results in the laser firing of colour agents on ceramic substrates. White glazed and fired ceramic plates were used as the substrate, while the deposited powders were mixtures containing ceramic colours and other colour agents. Various geometric patterns were deposited by a cw fiber Yb:YAG laser with speed controlled by a set of galvanometric scanners. The results, analyzed by means of optical microscopy, SEM EDS and laser profilometry explained the visually observed changes in pattern colours caused by the migration of pigment particles (characteristic elements) and allowed development of proper laser process.

  13. Fabrication of micro accelerometer and magnetoresistive sensor directly on a ceramic substrate

    NASA Astrophysics Data System (ADS)

    Aoyagi, Seiji

    2012-06-01

    Micro-electro-mechanical systems (MEMS) sensors have movable parts: thus, it is difficult to handle them at fabrication because of the possibility of fracture. If a MEMS sensor could be fabricated not only on a silicon substrate but also on a ceramic substrate, which can be used for a package of the end product, the above-mentioned problem about handling would be solved, and its fabrication cost would be reduced. In this presentation, as demonstrations of the sensors directly fabricated on a ceramic package, an accelerometer and a magnetoresistive (MR) sensor are focused on. A micro accelerometer is proposed, which consists of a proof mass and ferroelectric substrate under it. A screen-printed barium titanate (BTO) film on an alumina substrate was employed as ferroelectrics. The sensitivity of the fabricated accelerometer was 0.1 pF g‑1. A triaxis MR sensor is proposed, which detects not only x- and y-axes' magnetic field intensities but also that of the z-axis. Namely, not only azimuth but also angle of elevation of the sensor can be detected from triaxis components of the geomagnetic field. A permalloy (FeNi) plate is stood aside from the MR element. The plate distorts magnetic field and generates the x- (or y-) component from the originally z-directional field. A triaxis geomagnetic field was successfully detected by the fabricated sensor.

  14. LEDs on curved ceramic substrate with primary optics for modification of luminous intensity

    NASA Astrophysics Data System (ADS)

    Wei, An-Chi; Sze, Jyh-Rou; Chern, Jyh-Long

    2011-10-01

    Unlike the conventional LED luminary with a planar substrate and only the forward emission, the proposed LED luminary with a curved ceramic substrate can perform both the forward and the backward emissions. Assembled with the proper primary optics, an illustrated LED bulb has been designed, fabricated and measured. The measured luminous intensity of the LED bulb has shown the backward emission and designed distribution with the beam-angle of 133°. To broaden the application areas, such a LED bulb on a curved substrate has been modularized as a streetlight. The measured results of the proposed streetlight have shown that the beam angle of the luminous intensity and the luminaire efficiency are 132° and 86%, respectively. Meanwhile, its luminous characteristics also fit the standard for lighting design of urban roads.asei.c

  15. Low current operation of GaN-based blue-violet laser diodes fabricated on sapphire substrate using high-temperature-grown single-crystal AlN buffer layer

    NASA Astrophysics Data System (ADS)

    Ohba, Yasuo; Gotoda, Toru; Kaneko, Kei

    2007-01-01

    Low current laser operation at 405 nm has been demonstrated for the first time for the devices fabricated on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using a high-temperature-grown single-crystal AlN buffer. The thick optical guiding layers were adopted to improve optical confinement. The device structure was the 2-μm-wide ridge-stripe type without facet coating. The minimum threshold current and current density were 60 mA and 3.8 kA/cm 2 for cavity lengths of 500 mm and 1 mm, respectively. These data were comparable to those reported using the special dislocation reduction techniques. The threshold current density linearly decreases with decreasing inverse of cavity length. It was expected that the low threshold current density ranging from 1 to 2 kA/cm 2 could be realized by adapting high reflection coating for laser facets. This expected current density was comparable to values realized for devices grown on the thick freestanding GaN as substrates. These findings support the promising potential of the HT-AlN buffer technique for production of advanced short-wavelength light-emitting devices on sapphire substrates.

  16. Acoustic diagnosis for nondestructive evaluation of ceramic coatings on steel substrates

    SciTech Connect

    Aizawa, Tatsuhiko; Kihara, Junji; Ito, Manabu

    1995-11-01

    New methodology is proposed and developed to make quantitative nondestructive evaluation of TiN coated SKH steel substrates. Since the measured acoustic structure is in precise correspondence with the multi-layered elastic media, change of elastic properties by degradation and damage can be easily distinguished by the acoustic spectro microscopy. In particular, rather complex acoustic structure can be measured by the present method for ceramic coated steel substrate system, but it is completely described by the two-layer model in two dimensional elasticity. Typical example is the cut-off phenomenon where the dispersion curve for the leaky surface wave velocity is forced to be terminated by alternative activation of shear wave instead of it. The quantitative nondestructive diagnosis was developed on the basis of this predictable acoustic structure. Furthermore, the effect of coating conditions on the acoustic structure is also discussed to make residual stress distribution analysis in coating by the acoustic spectro microscopy with reference to the X-ray stress analysis. Some comments are made on further advancement of the present acoustic spectro microscopy adaptive to precise characterization of ceramic coatings and practical sensing system working in practice.

  17. Fabrication of ceramic substrate-reinforced and free forms by mandrel plasma spraying metal-ceramic composites

    NASA Technical Reports Server (NTRS)

    Quentmeyer, R. J.; Mcdonald, G.; Hendricks, R. C.

    1985-01-01

    Components fabricated of, or coated with, ceramics have lower parasitic cooling requirements. Techniques are discussed for fabricating thin-shell ceramic components and ceramic coatings for applications in rocket or jet engine environments. Thin ceramic shells with complex geometric forms involving convolutions and reentrant surfaces were fabricated by mandrel removal. Mandrel removal was combined with electroplating or plasma spraying and isostatic pressing to form a metal support for the ceramic. Rocket engine thrust chambers coated with 0.08 mm (3 mil) of ZrO2-8Y2O3 had no failures and a tenfold increase in engine life. Some measured mechanical properties of the plasma-sprayed ceramic are presented.

  18. Surface acoustic wave properties of (100) AlN films on diamond with different IDT positions.

    PubMed

    Lin, Zhi-Xun; Wu, Sean; Ro, Ruyen; Lee, Maw-Shung

    2009-06-01

    (100) AlN films have better surface acoustic wave (SAW) properties than (002) AlN films. In this research, (100) AlN films were combined with diamonds as a new composite SAW substrate. The SAW properties of (100) AlN films on diamonds were analyzed with 4 composite structures: interdigital transducer (IDT)/(100) AlN/diamond, (100) AlN/IDT/diamond, IDT/(100) AlN/metal/diamond, and metal/IDT/(100) AlN/diamond, and they exhibited some excellent SAW properties. Our research results provide a predictable and theoretical basis for further application on high-velocity SAW devices. PMID:19574132

  19. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOEpatents

    Sarin, V.K.

    1990-08-21

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  20. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOEpatents

    Sarin, Vinod K.

    1990-01-01

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  1. Athermal fading of luminescence in Al2 O3 ceramic substrates

    NASA Astrophysics Data System (ADS)

    Terry, Ian; Kouroukla, Eftychia; Bailiff, Ian K.

    2015-03-01

    Retrospective dosimetry aims to reconstruct ionising radiation dose to populations following a radiological incident using materials not designed for that purpose. Sintered alumina ceramic can function as a dosimeter with its luminescence properties and related trapped charge storage mechanism. Its widespread use as a substrate in surface mount devices and incorporation in devices such as mobile phones make it a ubiquitous potential dosimeter. We investigated the optically (OSL) and thermally (TL) stimulated luminescence properties of sintered alumina substrates. In contrast to their single crystal analogue developed for personal dosimetry, Al2O3:C, the substrates exhibit a significant loss of trapped charge (fading) within hours following irradiation at RT that seriously limits their utility for dosimetry over an extended timescale. The fading rates of OSL and TL signals of 0402 resistors were analysed under various storage conditions (time and temperature), complemented by a study of their microstructure. The results support a model of athermal loss of trapped charge due to electron tunnelling from trapping states; this contrasting behaviour is attributed to a physical modification of the trap environment arising from the manufacturing process.

  2. Reactions and microstructure at ceramic/metal interfaces

    SciTech Connect

    Tomsia, A.P.; Loehman, R.E.

    1993-12-31

    Reactions of Ti and Zr with AlN, Al{sub 2}O{sub 3} and mullite were studied. The substrates were selected to represent a simple nitride (AlN), a simple oxide (Al{sub 2}O{sub 3}), and a complex oxide (mullite). The activities of the Ti and Zr were varied by dissolving them at 1 and 5 wt.% in the 72Ag-28Cu eutectic composition, which is otherwise unreactive with the ceramics. Reactions were studied by measuring the variation of the alloy contact angle on the ceramic with time at temperature and by determining the compositions of interfacial reaction products. The reaction products were determined by SEM-EDS, EPMA and XRD hose analysis. Contact angles were lower for Ti alloys than for those containing Zr. Reaction products were primarily the nitrides of Zr and Ti for reaction with AlN and the respective oxides for reaction with Al{sub 2}O{sub 3}.Complex alloy phases were found in the metal away from the ceramic-metal reaction zone.

  3. Development of low dielectric constant alumina-based ceramics for microelectronic substrates

    SciTech Connect

    Wu, S. J.

    1993-05-01

    The performance of high speed computers depends not only on IC chips, but also on the signal propagation speed between these chips. The signal propagation delay in a computer is determined by the dielectric constant of the substrate material to which the IC chips are attached. In this study, a ceramic substrate with a low dielectric constant (k {approx} 5.0) has been developed. When compared with the traditional alumina substrate (k {approx} 10.0), the new material corresponds to a 37% decrease in the signal propagation delay. Glass hollow spheres are used to introduce porosity (k = 1.0) to the alumina matrix in a controlled manner. A surface coating technique via heterogeneous nucleation in aqueous solution has been used to improve the high temperature stability of these spheres. After sintering at 1,400 C, isolated spherical pores are uniformly distributed in the almost fully dense alumina matrix; negligible amounts of matrix defects can be seen. All pores are isolated from each other. Detailed analyses of the chemical composition find that the sintered sample consists of {alpha}-alumina, mullite and residual glass. Mullite is the chemical reaction product of alumina and the glass spheres. Residual glass exists because current firing conditions do not complete the mullitization reaction. The dielectric constant of the sintered sample is measured and then compared with the predicted value using Maxwell`s model. Mechanical strength is evaluated by a four-point bending test. Although the flexural strength decreases exponentially with porosity, samples with 34% porosity (k {approx} 5.0) still maintain adequate mechanical strength for the proper operation of a microelectronic substrate.

  4. Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates

    NASA Astrophysics Data System (ADS)

    Seredin, P. V.; Kashkarov, V. M.; Arsentyev, I. N.; Bondarev, A. D.; Tarasov, I. S.

    2016-08-01

    Using X-ray diffraction analysis, atomic force microscopy, IR and UV spectroscopy, the properties of thin aluminium nitride films (<200 nm) that were obtained by ion-plasma reactive sputtering on GaAs substrates with different orientations were studied. The films of aluminium nitride can have a refractive index within the range of 1.6-4.0 for the wavelength band around ~250 nm and an optical band-gap of ~5 eV. It was shown that the morphology, surface composition and optical functional characteristics of AlN/GaAs heterophase systems can be controlled owing to the use of misoriented GaAs substrates as well choice of the technological parameters used for the film growth.

  5. Ceramics

    NASA Astrophysics Data System (ADS)

    Yao, Lichun; Yang, Jian; Qiu, Tai

    2014-09-01

    The effects of CuO addition on phase composition, microstructure, sintering behavior, and microwave dielectric properties of 0.80Sm(Mg0.5Ti0.5)O3-0.20 Ca0.8Sr0.2TiO3(8SMT-2CST) ceramics prepared by a conventional solid-state ceramic route have been studied. CuO addition shows no obvious influence on the phase of the 8SMT-2CST ceramics and all the samples exhibit pure perovskite structure. Appropriate CuO addition can effectively promote sintering and grain growth, and consequently improve the dielectric properties of the ceramics. The sintering temperature of the ceramics decreases by 50°C by adding 1.00 wt.%CuO. Superior microwave dielectric properties with a ɛ r of 29.8, Q × f of 85,500 GHz, and τ f of 2.4 ppm/°C are obtained for 1.00 wt.%CuO doped 8SMT-2CST ceramics sintered at 1500°C, which shows dense and uniform microstructure as well as well-developed grain growth.

  6. Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

    SciTech Connect

    Soltani, A. Stolz, A.; Gerbedoen, J.-C.; Rousseau, M.; Bourzgui, N.; De Jaeger, J.-C.; Charrier, J.; Mattalah, M.; Barkad, H. A.; Mortet, V.

    2014-04-28

    Optical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal plane of sapphire substrate are studied. The physical properties of the film are determined by X-ray diffraction, atomic force microscopy, microRaman, and photocurrent spectroscopy. The refractive index and the thermo-optic coefficients are determined by m-lines spectroscopy using the classical prism coupling technique. The optical losses of this planar waveguide are also measured in the spectral range of 450–1553 nm. The lower value of optical losses is equal to 0.7 dB/cm at 1553 nm. The optical losses due to the surface scattering are simulated showing that the contribution is the most significant at near infrared wavelength range, whereas the optical losses are due to volume scattering and material absorption in the visible range. The good physical properties and the low optical losses obtained from this planar waveguide are encouraging to achieve a wide bandgap optical guiding platform from these aluminum nitride thin films.

  7. Thermal expansion of rock-salt cubic AlN

    NASA Astrophysics Data System (ADS)

    Bartosik, M.; Todt, M.; Holec, D.; Todt, J.; Zhou, L.; Riedl, H.; Böhm, H. J.; Rammerstorfer, F. G.; Mayrhofer, P. H.

    2015-08-01

    We combine continuum mechanics modeling and wafer curvature experiments to characterize the thermal expansion coefficient of AlN in its metastable cubic rock-salt (B1) structure. The latter was stabilized as nm thin layers by coherency strains in CrN/AlN epitaxial multilayers deposited on Si (100) substrates using reactive magnetron sputtering. The extraction of the B1-AlN thermal expansion coefficient, from experimentally recorded temperature dependent wafer curvature data, is formulated as an inverse problem using continuum mechanics modeling. The results are cross-validated by density functional theory calculations.

  8. Crack Driving Forces in a Multilayered Coating System for Ceramic Matrix Composite Substrates

    NASA Technical Reports Server (NTRS)

    Ghosn, Louis J.; Zhu, Dongming; Miller, Robert A.

    2005-01-01

    The effects of the top coating thickness, modulus and shrinkage strains on the crack driving forces for a baseline multilayer Yttria-Stabilized-Zirconia/Mullite/Si thermal and environment barrier coating (TEBC) system for SiC/SiC ceramic matrix composite substrates are determined for gas turbine applications. The crack driving forces increase with increasing modulus, and a low modulus thermal barrier coating material (below 10 GPa) will have no cracking issues under the thermal gradient condition analyzed. Since top coating sintering increases the crack driving forces with time, highly sintering resistant coatings are desirable to maintain a low tensile modulus and maintain a low crack driving force with time. Finite element results demonstrated that an advanced TEBC system, such as ZrO2/HfO2, which possesses improved sintering resistance and high temperature stability, exhibited excellent durability. A multi-vertical cracked structure with fine columnar spacing is an ideal strain tolerant coating capable of reducing the crack driving forces to an acceptable level even with a high modulus of 50 GPa.

  9. Near-bandedge cathodoluminescence of an AlN homoepitaxial film

    NASA Astrophysics Data System (ADS)

    Silveira, E.; Freitas, J. A.; Kneissl, M.; Treat, D. W.; Johnson, N. M.; Slack, G. A.; Schowalter, L. J.

    2004-05-01

    Cathodoluminescence experiments were performed on a high-quality AlN epitaxial film grown by organometallic vapor phase epitaxy on a large single crystal AlN substrate. The low-temperature near-bandedge spectra clearly show six very narrow lines. The thermal quenching behavior of these emission lines provides insight on how to assign them to free and bound exciton recombination processes. The binding energy for the free-exciton-A in AlN was found to be nearly twice that in GaN. The observation of the free-exciton-A first excited state permitted us to estimate its reduced effective mass and, by using recent reported values for the hole effective mass in Mg-doped AlN, the electron effective mass in AlN has been deduced.

  10. Optical characterization of Al- and N-polar AlN waveguides for integrated optics

    NASA Astrophysics Data System (ADS)

    Rigler, Martin; Buh, Jože; Hoffmann, Marc P.; Kirste, Ronny; Bobea, Milena; Mita, Seiji; Gerhold, Michael D.; Collazo, Ramon; Sitar, Zlatko; Zgonik, Marko

    2015-04-01

    Dispersion of the extraordinary and ordinary refractive indices of Al- and N-polar AlN waveguides is measured by multiple angle-of-incidence and spectroscopic ellipsometry techniques. The polarity-controlled AlN layers are grown by metal-organic chemical vapor deposition on (0001)-sapphire substrates. Taking into consideration the different surface morphologies of the Al- and N-polar AlN waveguides, we propose two optical models to describe the measured ellipsometry data. The results indicate that there is no difference between the refractive indices of the AlN grown in opposite directions, which confirms the potential of the AlN lateral polar structures for use in nonlinear optical applications based on quasi phase matching.

  11. Ceramics

    NASA Astrophysics Data System (ADS)

    Chen, Song; Zhu, De-Gui; Cai, Xu-Sheng

    2014-08-01

    The dense monoclinic-SrAl2Si2O8 ceramics have been prepared by a two-step sintering process at a sintering temperature of 1173 K (900 °C). Firstly, the pre-sintered monoclinic-SrAl2Si2O8 powders containing small SiO2·Al2O3 crystal phases were obtained by continuously sintering a powder mixture of SrCO3 and kaolin at 1223 K (950 °C) for 6 hours and 1673 K (1400 °C) for 4 hours, respectively. Subsequently, by the combination of the pre-sintered ceramic powders with the composite flux agents, which are composed of a SrO·3B2O3 flux agent and α-Al2O3, the low-temperature densification sintering of the monoclinic-SrAl2Si2O8 ceramics was accomplished at 1173 K (900 °C). The low-temperature sintering behavior and microstructure evolvement of the monoclinic-SrAl2Si2O8 ceramics have been investigated in terms of Al2O3 in addition to the composite flux agents. It shows that due to the low-meting characteristics, the SrO·3B2O3 flux agent can urge the dense microstructure formation of the monoclinic-SrAl2Si2O8 ceramics and the re-crystallization of the grains via a liquid-phase sintering. The introduction of α-Al2O3 to the SrO·3B2O3 flux agent can apparently lead to more dense microstructures for the monoclinic-SrAl2Si2O8 ceramics but also cause the re-precipitation of SiO2·Al2O3 compounds because of an excessive Al2O3 content in the SrO·3B2O3 flux agent.

  12. Ceramics

    NASA Astrophysics Data System (ADS)

    Bin, Tang; Feng, Si; Ying-xiang, Li; He-tuo, Chen; Xiao, Zhang; Shu-ren, Zhang

    2014-11-01

    The effects of Ta2O5/Y2O3 codoping on the microstructure and microwave dielectric properties of Ba(Co0.56Zn0.40)1/3Nb2/3O3- xA- xB (A = 0.045 wt.% Ta2O5; B = 0.113 wt.% Y2O3) ceramics ( x = 0, 1, 2, 4, 8, 16, 32) prepared according to the conventional solid-state reaction technique were investigated. The x-ray diffraction (XRD) results showed that the main crystal phase in the sintered ceramics was BaZn0.33Nb0.67O3-Ba3CoNb2O9. The additional surface phase of Ba8CoNb6O24 and trace amounts of Ba5Nb4O15 second phase were present when Ta2O5/Y2O3 was added to the ceramics. The 1:2 B-site cation ordering was affected by the substitution of Ta5+ and Y3+ in the crystal lattice, especially for x = 4. Scanning electron microscopy (SEM) images of the optimally doped ceramics sintered at 1340°C for 20 h showed a compact microstructure with crystal grains in dense contact. Though the dielectric constant increased with the x value, appropriate addition would result in a tremendous modification of the Q × f and τ f values. Excellent microwave dielectric properties ( ɛ r = 35.4, Q × f = 62,993 GHz, and τ f = 2.6 ppm/°C) were obtained for the ceramic with x = 0.4 sintered in air at 1340°C for 20 h.

  13. Influence of initial growth stages on AlN epilayers grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Balaji, M.; Ramesh, R.; Arivazhagan, P.; Jayasakthi, M.; Loganathan, R.; Prabakaran, K.; Suresh, S.; Lourdudoss, S.; Baskar, K.

    2015-03-01

    AlN layers of thickness of about 2 μm have been grown with AlN nucleation layers (NLs) on (001) sapphire substrates using metal organic chemical vapor deposition. Increasing the AlN-NL deposition temperature from 850 to 1250 °C has been found to have significant effect on the surface morphology and the structural quality of the AlN layers. The surface morphology of the AlN-NLs and the AlN layers has been assessed using atomic force microscopy (AFM). The AFM images of the AlN-NLs reveal the coalescence pattern of NLs. AFM images of the AlN layers and the in-situ reflectance measurement disclose the surface morphology and the growth pattern of the AlN layers, respectively. Smooth surface with macro-steps and terrace features has been achieved for the AlN layer grown on the NL deposited at 950 °C. The structural quality of AlN layers has been studied by high resolution X-ray diffraction and Raman spectroscopy. The screw dislocation density from (002) reflection and the average edge dislocation density from (102), (302) and (100) reflections of the AlN layer on NL deposited at 950 °C are estimated to be 9×107 cm-2 and 4.4×109 cm-2, respectively. Lateral correlation length (L) is calculated from the (114) reciprocal space mapping of the AlN layers and correlated with the edge dislocation density of the AlN layers. Raman E2 (high) phonon mode indicates compressive strain in the AlN layers grown on the NLs deposited at various temperatures. From this work, it has been inferred that the uniform coalescence of the nucleation islands and the complete coverage of AlN-NL determine the surface morphology and the structural quality of the subsequently grown AlN layers.

  14. Ceramics

    NASA Astrophysics Data System (ADS)

    Li, Enzhu; Zou, Mengying; Duan, Shuxin; Xu, Ning; Yuan, Ying; Zhou, Xiaohua

    2014-11-01

    The effects of excess Li content on the phase structure and microwave dielectric properties, especially on the temperature coefficient, of LiNb0.6 Ti0.5O3 (LNT) ceramics were studied. The results show that small amounts of Li effectively enhanced the sintering process due to the compensation of high volatility of Li, leading to a densification and homogenous microstructure, and therefore enhanced the dielectric properties. However, too much Li leads to a secondary phase and cause abnormal grain growth. The LNT + 5 wt.% Li ceramic sintered at 1075°C in the air shows the best properties of ɛ r = 69.73, Q × f = 5543 GHz, and τ f = -4.4 ppm/°C.

  15. Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire

    NASA Astrophysics Data System (ADS)

    Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa; Fukuyama, Hiroyuki; Kaur, Jesbains; Kuwano, Noriyuki

    2016-02-01

    The annealing of an AlN buffer layer in a carbon-saturated N2-CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650-1700 °C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy (MOVPE), and was annealed at 1700 °C for 1 h. We fabricated a 2-µm-thick AlN layer on the annealed AlN buffer layer by MOVPE. The full widths at half maximum of the (0002)- and (10\\bar{1}2)-plane X-ray rocking curves were 16 and 154 arcsec, respectively, and the threading dislocation density was 4.7 × 108 cm-2.

  16. Effects of coronal substrates and water storage on the microhardness of a resin cement used for luting ceramic crowns

    PubMed Central

    de MENDONÇA, Luana Menezes; PEGORARO, Luiz Fernando; LANZA, Marcos Daniel Septímio; PEGORARO, Thiago Amadei; de CARVALHO, Ricardo Marins

    2014-01-01

    Composite resin and metallic posts are the materials most employed for reconstruction of teeth presenting partial or total destruction of crowns. Resin-based cements have been widely used for cementation of ceramic crowns. The success of cementation depends on the achievement of adequate cement curing. Objectives To evaluate the microhardness of Variolink® II (Ivoclar Vivadent, Schaan, Liechtenstein), used for cementing ceramic crowns onto three different coronal substrate preparations (dentin, metal, and composite resin), after 7 days and 3 months of water storage. The evaluation was performed along the cement line in the cervical, medium and occlusal thirds on the buccal and lingual aspects, and on the occlusal surface. Material and Methods Thirty molars were distributed in three groups (N=10) according to the type of coronal substrate: Group D- the prepared surfaces were kept in dentin; Groups M (metal) and R (resin)- the crowns were sectioned at the level of the cementoenamel junction and restored with metallic cast posts or resin build-up cores, respectively. The crowns were fabricated in ceramic IPS e.max® Press (Ivoclar Vivadent, Schaan, Liechtenstein) and luted with Variolink II. After 7 days of water storage, 5 specimens of each group were sectioned in buccolingual direction for microhardness measurements. The other specimens (N=5) were kept stored in deionized water at 37ºC for three months, followed by sectioning and microhardness measurements. Results Data were first analyzed by three-way ANOVA that did not reveal significant differences between thirds and occlusal surface (p=0.231). Two-way ANOVA showed significant effect of substrates (p<0.001) and the Tukey test revealed that microhardness was significantly lower when crowns were cemented on resin cores and tested after 7 days of water storage (p=0.007). Conclusion The type of material employed for coronal reconstruction of preparations for prosthetic purposes may influence the cement properties

  17. Preparation of the c-axis oriented AlN film by laser chemical vapor deposition using a newly proposed Al(acac)3 precursor

    NASA Astrophysics Data System (ADS)

    You, Yu; Ito, Akihiko; Tu, Rong; Goto, Takashi

    2013-02-01

    Highly oriented AlN film was prepared on a c-plane sapphire substrate by laser chemical vapor deposition using a newly proposed aluminum acetylacetonate precursor and ammonia gas as source reactants. The c-axis oriented AlN films were obtained on the c-plane sapphire substrate at deposition temperatures from 900 to 1230 K. AlN film prepared at 1047 K showed an epitaxial relation as (//( [//[. The full width at half maximum (FWHM) of the X-ray rocking curve for AlN (0002) plane increased with increasing deposition temperature. The c-axis lattice parameter decreased with increasing deposition temperature.

  18. Preparation of highly c-axis oriented AlN thin films on Hastelloy tapes with Y2O3 buffer layer for flexible SAW sensor applications

    NASA Astrophysics Data System (ADS)

    Peng, Bin; Jiang, Jianying; Chen, Guo; Shu, Lin; Feng, Jie; Zhang, Wanli; Liu, Xinzhao

    2016-02-01

    Highly c-axis oriented aluminum nitrade (AlN) films were successfully deposited on flexible Hastelloy tapes by middle-frequency magnetron sputtering. The microstructure and piezoelectric properties of the AlN films were investigated. The results show that the AlN films deposited directly on the bare Hastelloy substrate have rough surface with root mean square (RMS) roughness of 32.43nm and its full width at half maximum (FWHM) of the AlN (0002) peak is 12.5∘. However, the AlN films deposited on the Hastelloy substrate with Y2O3 buffer layer show smooth surface with RMS roughness of 5.46nm and its FWHM of the AlN (0002) peak is only 3.7∘. The piezoelectric coefficient d33 of the AlN films deposited on the Y2O3/Hastelloy substrate is larger than three times that of the AlN films deposited on the bare Hastelloy substrate. The prepared highly c-axis oriented AlN films can be used to develop high-temperature flexible SAW sensors.

  19. Properties of AlN film grown on Si (111)

    NASA Astrophysics Data System (ADS)

    Dai, Yiquan; Li, Shuiming; Sun, Qian; Peng, Qing; Gui, Chengqun; Zhou, Yu; Liu, Sheng

    2016-02-01

    Stress and strain in an AlN film grown on Si (111) substrate have been evaluated by measuring Raman frequency shifts. Mechanical properties and phonon deformation potentials of AlN are evaluated by first principles calculations. The calculation model is verified by comparing the calculated Raman frequencies and frequencies detected from a bulk single crystal. Results show that the two sets of frequencies agree very well with each other. Thus, with the same verified model and parameters, elastic constants and phonon deformation potentials are calculated. Additionally, we successfully develop a numerical model to verify the calculation above and the model itself is also useful to predict properties of crystal films. Finally, the stress, strain, and piezoelectric properties are analyzed and compared for films on different substrates.

  20. Property characterization of AlN thin films in composite resonator structure

    NASA Astrophysics Data System (ADS)

    Chen, Qingming; Qin, Lifen; Wang, Qing-Ming

    2007-04-01

    AlN thin films with c-axis orientation have been investigated for fabricating thin film bulk acoustic wave resonators in the past few years. Characterization of thin film material properties including density, elastic modulus, and piezoelectric coefficient is essential in processing study and for predicting the performance of the acoustic devices. In this paper, we present our results on the fabrication of highly c-axis oriented AlN thin films on Pt /Ti/Si (100) substrates by dc reactive magnetron sputtering method. The crystalline structure and the surface morphology of AlN films are characterized by x-ray diffraction and scanning electron microscopy. The effective piezoelectric coefficient d33eff of the AlN films was measured by a laser interferometer method and the piezoelectric coefficient d33 was estimated. A recently developed resonance spectrum method is applied to characterize the electromechanical properties of AlN thin films based on the input electrical impedance equation derived by one-dimensional transmission line theory for composite resonators. Using the experimental impedance spectrum data, the density and elastic constant of the piezoelectric AlN thin film in the four-layer composite resonator structure are evaluated. The calculated results reveal that the piezoelectric coefficient d33, density, and velocity of the c-axis oriented AlN thin film are 4.19pm/V, 3187.3kg/m3, and 10631m/s, respectively.

  1. Study on deposition technique and properties of Pd/Ag alloy film sensor supported on ceramic substrate

    NASA Astrophysics Data System (ADS)

    Geng, Z. T.; He, Q.; Jin, C. G.

    2016-07-01

    Developing high-quality hydrogen sensitive material is the core part of hydrogen sensor, whose performance is determined by the sensitive response, reproducibility and recovery of hydrogen material etc. In order to overcome the defects of hydrogen embrittlement in previous hydrogen sensor which were based on the pure palladium, sliver as the second component added to the palladium was studied. Using photochemical etching technology to produce a bent metal mask, the mask is put on the ceramic substrate. Firstly, the thin film of Ta2O5 as a transition layer grew on the ceramic substrate. Then, a series of Pd/Ag alloy film sensors were prepared, and each performance characterization of Pd/Ag alloy film was studied. Testing results indicated that the thin film had a good linear output performance at 0∼⃒30% hydrogen concentration range, and demonstrates a high responsiveness and good repeatability. With temperature increasing, the strength of the responsive signal of the Pd/Ag alloy film decreases and its responsive time was also shortened.

  2. Super Smooth Modification of Al2O3 Ceramic Substrate by High Temperature Glaze of CaO-Al2O3-SiO2 System

    NASA Astrophysics Data System (ADS)

    Zhang, Jihua; Zhen, Shanxue; Yang, Lijun; Lou, Feizhi; Chen, Hongwei; Yang, Chuanren

    2011-01-01

    The rough surface of ceramic substrate is an obstacle for the scale down of line-width for thin film passive integrated devices (PID). In this paper, a modification method for Al2O3 ceramic substrate with super smooth in surface was proposed. Coating a layer of CaO-Al2O3-SiO2 (CAS) glass was performed to flat the rough surface of alumina substrate by sol-gel method. It was found that addition of 0.06% V2O5 can inhibit the recrystallization of the glaze. The root-mean-square (RMS) roughness of the glazed substrates reached a surprising flatness as small as 0.5 nm, and its melting temperature is higher than 1300 °C. This substrate with super flatness and high temperature endurance may be promising for high performance thin film devices.

  3. Metal-Insulator-Semiconductor (MIS) Structure with AlN Dielectric

    SciTech Connect

    Mahyuddin, A.; Hassan, Z.; Cheong, K. Y.

    2009-06-01

    In this paper, we present the study of the structural and electrical properties of AlN/GaN thin films grown on Si (111) substrates by plasma-assisted molecular beam epitaxy (RF-MBE) with AlN buffer layer. The performance of aluminum nitride (AlN) as insulator and aluminum (Al) contacts is presented. The thickness of GaN film and AlN insulating film as seen from SEM cross section are about 357.3 nm and 63.38 nm respectively. The presence of Ga, Al and N are confirmed by energy dispersive X-ray (EDX) measurement. The X-ray diffraction (XRD) measurement reveals that the samples are all wurtzite hexagonal AlN and GaN structure. The fabricated metal-insulator-semiconductor (MIS) structure was characterized using capacitance-voltage (C-V) measurements.

  4. Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

    SciTech Connect

    Chan, J.; Fu, T.; Cheung, N.W.; Ross, J.; Newman, N.; Rubin, M.

    1993-04-01

    Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 C, while the crystallinity of AlN/(0001) A1{sub 2}O{sub 3} samples improved from 700 to 850 C. The optical absorption characteristics of the AlN/(0001) A1{sub 2}O{sub 3} films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

  5. On the properties of aluminium doped zinc oxide thin films deposited on plastic substrates from ceramic targets

    NASA Astrophysics Data System (ADS)

    Girtan, M.; Vlad, A.; Mallet, R.; Bodea, M. A.; Pedarnig, J. D.; Stanculescu, A.; Mardare, D.; Leontie, L.; Antohe, S.

    2013-06-01

    We report on the deposition of Al doped ZnO (AZO) thin films on unheated polyethylene terephthalate (PET) substrates by pulsed laser deposition technique using a UV excimer laser and Al2O3:ZnO ceramic targets (1.5 and 2 wt% Al2O3). The deposited AZO films have been investigated by atomic force microscopy, scanning electron microscopy, X-ray diffraction, and optical spectrophotometry. Films present excellent optical and electrical properties (transmission in the visible range T > 85%; resistivity at room temperature ρ = 1.3 × 10-3 Ω cm) as electrodes for plastic solar cells. A good correlation was found between deposition conditions (laser fluence) and structural, morphological, optical and electrical properties.

  6. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

    SciTech Connect

    Gaddy, BE; Bryan, Z; Bryan, I; Kirste, R; Xie, JQ; Dalmau, R; Moody, B; Kumagai, Y; Nagashima, T; Kubota, Y; Kinoshita, T; Koukitu, A; Sitar, Z; Collazo, R; Irving, DL

    2013-10-14

    A prominent 2.8 eV emission peak is identified in bulk AlN substrates grown by physical vapor transport. This peak is shown to be related to the carbon concentration in the samples. Density functional theory calculations predict that this emission is caused by a donor-acceptor pair (DAP) recombination between substitutional carbon on the nitrogen site and a nitrogen vacancy. Photoluminescence and photoluminescence-excitation spectroscopy are used to confirm the model and indicate the DAP character of the emission. The interaction between defects provides a pathway to creating ultraviolet-transparent AlN substrates for optoelectronics applications. (C) 2013 AIP Publishing LLC.

  7. Deposition and thermal characterization of nano-structured aluminum nitride thin film on Cu-W substrate for high power light emitting diode package.

    PubMed

    Cho, Hyun Min; Kim, Min-Sun

    2014-08-01

    In this study, we developed AlN thick film on metal substrate for hybrid type LED package such as chip on board (COB) using metal printed circuit board (PCB). Conventional metal PCB uses ceramic-polymer composite as electrical insulating layer. Thermal conductivities of such type dielectric film are typically in the range of 1~4 W/m · K depending on the ceramic filler. Also, Al or Cu alloy are mainly used for metal base for high thermal conduction to dissipate heat from thermal source mounted on metal PCB. Here we used Cu-W alloy with low thermal expansion coefficient as metal substrate to reduce thermal stress between insulating layer and base metal. AlN with polyimide (PI) powder were used as starting materials for deposition. We could obtain very high thermal conductivity of 28.3 W/m · K from deposited AlN-PI thin film by AlN-3 wt% PI powder. We made hybrid type high power LED package using AlN-PI thin film. We tested thermal performance of this film by thermal transient measurement and compared with conventional metal PCB substrate. PMID:25936009

  8. Twymann Green interferometry in study of AlN material as an actuation layer in MEMS

    NASA Astrophysics Data System (ADS)

    Gorecki, C.; Krupa, K.; Andrei, A.; Jozwik, M.; Nieradko, L.; Delobelle, P.; Hirsinger, L.

    2008-08-01

    In this study we focus on the aluminium nitride (AlN). This material shows a large number of advantages associated with good piezoelectric properties. Therefore, AlN is an excellent candidate for MEMS actuation where low dielectric loss, low thermal drift and high signal-to-noise ratios are required. In this paper, the case of AlN driven cantilevers composed of three thin layers deposited on the silicon substrate will be considered. Precise knowledge of physical and material parameters of AlN applied in these simple elements are necessary for their further applications. However, up to now, AlN still represents a technological challenge and many of its micromechanical and piezoelectric properties are not precisely described. That is why, our study has been concentrated on determination of such parameters like the residual thin film stresses, thermal expansion coefficient α and piezoelectric coefficient d31. In this paper the interactions between the theoretical solution, the numerical FEM simulations and experimental results were performed. This hybrid methodology allows to identify the main source of behaviors discrepancy between the physical and numerical model of tested cantilevers. Obtained knowledge leads to optimization of the technological process and required parameters of actuator functionality achievement by better understanding of the tested microdevices properties. In experimental procedure, it was used nanoindentation tests for obtaining an elastic properties of AlN, interferometric techniques for performing the static and dynamic measurements of cantilevers and scanning electron microscope for measuring topography.

  9. Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zeng, Qing; Chen, Zhaolong; Zhao, Yun; Wei, Tongbo; Chen, Xiang; Zhang, Yun; Yuan, Guodong; Li, Jinmin

    2016-08-01

    High-quality AlN films were directly grown on graphene/sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The graphene layers were directly grown on sapphire by atmospheric-pressure chemical vapor deposition (APCVD), a low-cost catalyst-free method. We analyzed the influence of the graphene layer on the nucleation of AlN at the initial stage of growth and found that sparse AlN grains on graphene grew and formed a continuous film via lateral coalescence. Graphene-assisted AlN films are smooth and continuous, and the full width at half maximum (FWHM) values for (0002) and (10\\bar{1}2) reflections are 360 and 622.2 arcsec, which are lower than that of the film directly grown on sapphire. The high-resolution TEM images near the AlN/sapphire interface for graphene-assisted AlN films clearly show the presence of graphene, which kept its original morphology after the 1200 °C growth of AlN.

  10. Mechanical and physicochemical properties of AlN thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cibert, C.; Tétard, F.; Djemia, P.; Champeaux, C.; Catherinot, A.; Tétard, D.

    2004-10-01

    AlN thin films have been deposited on Si(100) substrates by a pulsed laser deposition method. The deposition parameters (pressure, temperature, purity of target) play an important role in the mechanical and physicochemical properties. The films have been characterized using X-ray diffraction, atomic force microscopy, Brillouin light scattering, Fourier transform infrared spectroscopy and wettability testing. With a high purity target of AlN and a temperature deposition of 750 ∘C, the measured Rayleigh wave velocity is close to the one previously determined for AlN films grown at high temperature by metal-organic chemical vapour deposition. Growth of nanocrystalline AlN at low temperature and of AlN film with good crystallinity for samples deposited at higher temperature is confirmed by infrared spectroscopy, as it was by atomic force microscopy, in agreement with X-ray diffraction results. A high hydrophobicity has been measured with zero polar contribution for the surface energy. These results confirm that films made by pulsed laser deposition of pure AlN at relatively low temperature have good prospects for microelectromechanical systems applications.

  11. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200–650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ≤0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 °C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 °C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ≤ 400 °C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ≥ 500 °C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 °C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  12. Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping.

    PubMed

    Tang, Yong-Bing; Bo, Xiang-Hui; Xu, Jun; Cao, Yu-Lin; Chen, Zhen-Hua; Song, Hai-Sheng; Liu, Chao-Ping; Hung, Tak-Fu; Zhang, Wen-Jun; Cheng, Hui-Ming; Bello, Igor; Lee, Shuit-Tong; Lee, Chun-Sing

    2011-05-24

    Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical vapor deposition. The Mg-doped AlN NWs are single-crystalline and grow along the [001] direction. Gate-voltage-dependent transport measurements on field-effect transistors constructed from individual NWs revealed the transition from n-type conductivity in the undoped AlN NWs to p-type conductivity in the Mg-doped NWs. By adjusting the doping gas flow rate (0-10 sccm), the conductivity of AlN NWs can be tuned over 7 orders of magnitude from (3.8-8.5) × 10(-6) Ω(-1) cm(-1) for the undoped sample to 15.6-24.4 Ω(-1) cm(-1) for the Mg-doped AlN NWs. Hole concentration as high as 4.7 × 10(19) cm(-3) was achieved for the heaviest doping. In addition, the maximum hole mobility (∼6.4 cm(2)/V s) in p-type AlN NWs is much higher than that of Mg-doped AlN films (∼1.0 cm(2)/V s). (2) The realization of p-type AlN NWs with tunable electrical transport properties may open great potential in developing practical nanodevices such as deep-UV light-emitting diodes and photodetectors. PMID:21480640

  13. Studies of Splat Formation of Copper and Copper Aluminium on Ceramic Substrate in Plasma Spray Process

    NASA Astrophysics Data System (ADS)

    Tran, A. T. T.; Hyland, M. M.; Fukumoto, M.; Munroe, P.

    2016-01-01

    Of the substrate-related factors that will influence splat formation, alloying elements has been little studied. In the present work, we have examined the role of alloying elements in controlling the extent of splashing of plasma-sprayed splats. Splats of copper (Cu) and copper alloyed with Al and Zr were deposited by plasma spray or as free-falling droplets. The splat formation and splat-substrate interfaces were characterized using SEM and FIB. It was found that the presence of aluminium in plasma-sprayed Cu-10%Al increased the portion of favorable disk-shaped splats compared to pure copper. It was also found that the disk-shaped splat proportion of Cu-10%Al at room temperature is nearly identical to that of Cu splat at 300 °C, indicating that the addition of Al in the alloy leads to the improvement of splat formation, correlating with the improvement in the interface bonding with the substrate.

  14. Highly piezoelectric co-doped AlN thin films for wideband FBAR applications.

    PubMed

    Yokoyama, Tsuyoshi; Iwazaki, Yoshiki; Onda, Yosuke; Nishihara, Tokihiro; Sasajima, Yuichi; Ueda, Masanori

    2015-06-01

    We report piezoelectric materials composed of charge-compensated co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) thin films. The effect of the dopant element into AlN on the crystal structure, and piezoelectric properties of co-doped AlN was determined on the basis of a first-principles calculation, and the theoretical piezoelectric properties were confirmed by experimentally depositing thin films of magnesium (Mg) and zirconium (Zr) co-doped AlN (Mg-Zr-doped AlN). The Mg-Zrdoped AlN thin films were prepared on Si (100) substrates by using a triple-radio-frequency magnetron reactive co-sputtering system. The crystal structures and piezoelectric coefficients (d33) were investigated as a function of the concentrations, which were measured by X-ray diffraction and a piezometer. The results show that the d33 of Mg-Zr-doped AlN at total Mg and Zr concentrations (both expressed as β) of 0.35 was 280% larger than that of pure AlN. The experimentally measured parameter of the crystal structure and d33 of Mg-Zr-doped AlN (plotted as functions of total Mg and Zr concentrations) were in very close agreement with the corresponding values obtained by the first-principle calculations. Thin film bulk acoustic wave resonators (FBAR) employing (Mg,Zr)0.13Al0.87N and (Mg, Hf)0.13 Al0.87N as a piezoelectric thin film were fabricated, and their resonant characteristics were evaluated. The measured electromechanical coupling coefficient increased from 7.1% for pure AlN to 8.5% for Mg-Zr-doped AlN and 10.0% for Mg- Hf-doped AlN. These results indicate that co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) films have potential as piezoelectric thin films for wideband RF applications. PMID:26067035

  15. MOVPE of AlN and GaN by using novel precursors

    NASA Astrophysics Data System (ADS)

    Ho, Kwok-Lun; Jensen, Klavs F.; Hwang, Jen-Wei; Gladfelter, Wayne L.; Evans, John F.

    1991-01-01

    The technique of low pressure MOVPE has been used to grow thin films of AlN and GaN on silicon and (0001) sapphire substrates using the single-source precursors diethylaluminum azide [Et 2AlN 3] 3 (DEAA) and diethygallium azide [Et 2GaN 3] 3 (DEGA). In-situ growth rate measurements have been performed for AlN growth on Si substrates. For comparison with conventional MOVPE growth, epitaxial films of Al xGa 1- xN have also been deposited from triethylgallium (TEG), triethylaluminum (TEAl) and NH 3 under similar conditions. The properties of the grown films are discussed in terms of precursor selection and growth conditions.

  16. Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Liu, Ting; Zhang, Jicai; Su, Xujun; Huang, Jun; Wang, Jianfeng; Xu, Ke

    2016-05-01

    Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN.

  17. Nucleation and growth of (10¯11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

    PubMed Central

    Liu, Ting; Zhang, Jicai; Su, Xujun; Huang, Jun; Wang, Jianfeng; Xu, Ke

    2016-01-01

    Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN. PMID:27185345

  18. Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy.

    PubMed

    Liu, Ting; Zhang, Jicai; Su, Xujun; Huang, Jun; Wang, Jianfeng; Xu, Ke

    2016-01-01

    Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN. PMID:27185345

  19. Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Ming; Chen, Yung-Yu; Felmetsger, Valery V.; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G.; Pisano, Albert P.

    2013-02-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C-SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C-SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C-SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C-SiC/Si multilayer structure exhibits a phase velocity of 5528 m s-1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C-SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C-SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C-SiC layers are applicable to timing and sensing applications in harsh environments.

  20. Microstructural stability of AlN diffusion barrier for nanocomposite Ni + CrAlYSiHfN coating on single crystal superalloy at high temperatures

    NASA Astrophysics Data System (ADS)

    Ren, Pan; Zhu, Shenglong; Wang, Fuhui

    2015-12-01

    An AlN interlayer was fabricated by filtered vacuum arc evaporation as a diffusion barrier (DB) between Ni + CrAlYSiHfN composite coating and K417G superalloy. Microstructure changes of the AlN DB were investigated after exposure at 1000 and 1100 °C. Amorphous structure was found in the as-deposited AlN DB, which went through crystallization when exposing at high temperature. The AlN DB suppressed interdiffusion between overlayer and substrate effectively after 200 h exposure at both 1000 °C and 1100 °C. A few substrate element precipitates were observed within the grain boundary of the AlN DB after exposure at 1100 °C for 200 h.

  1. Effect of thermal cycling on stress in metallic films on ceramic substrates

    NASA Technical Reports Server (NTRS)

    Mattison, Edward M.; Vessot, Robert F. C.

    1990-01-01

    The hydrogen maser is the most stable frequency standard currently available for averaging intervals of hours to weeks. A major contributor to maser frequency variations is the maser's microwave resonant cavity: by means of the cavity pulling effect, a change in the cavity's resonance frequency produces a proportional change in the maser's output frequency. To minimize variations in the cavity's dimensions, and thus in its resonance frequency, maser cavities are often constructed of a low-expansivity glass-ceramic material coated on its surface with a conductive metallic film. It was previously shown that silver films like those used in SAO maser cavities develop tensile stress when cooled to room temperature after being fired onto the cavity, and that the stress in such films relaxes with time at a rate proportional to the level of stress. Stress relaxation in maser cavity coatings can alter the shape, and hence the resonance frequency, of the cavity, resulting in a slow variation in the maser's output frequency. The possibility was investigated of reversing the initial tensile stress by precooling the coated cavity material. It was hypothesized that cooling the material well below its normal working temperature and then warming it to its normal temperature would result in a lower tensile stress or even a compressive stress. Under such a condition stress relaxation, and thus any consequent frequency drifts, might be reduced or reversed.

  2. Effect of calcium phosphate ceramic substrate geometry on mesenchymal stromal cell organization and osteogenic differentiation.

    PubMed

    Urquia Edreira, Eva R; Hayrapetyan, Astghik; Wolke, Joop G C; Croes, Huib J E; Klymov, Alexey; Jansen, John A; van den Beucken, Jeroen J J P

    2016-01-01

    The composition of calcium phosphate (CaP) ceramics in combination with surface features have been shown to influence biological performance, and micro- and nano-scale topography is known to stimulate osteogenic differentiation of mesenchymal stromal cells (MSCs). In view of this, adipose tissue derived MSCs were cultured on CaP disks featuring hemispherical concavities of various sizes (440, 800 or 1800 μm diameter). It was hypothesized that (i) surface concavities would promote cell proliferation, cellular organization within the concavities, and osteogenic differentiation, as a result of a more pronounced 3D micro-environment and CaP nucleation in concavities, and (ii) MSC proliferation and osteogenic differentiation would increase with smaller concavity size due to more rapidly occurring 3D cell-cell interactions. We found that concavities indeed affect cell proliferation, with 440 μm concavities increasing cell proliferation to a larger extent compared to 800 and 1800 μm concavities as well as planar surfaces. Additionally, concavity size influenced 3D cellular organization within the concavity volume. Interestingly, concavity size promoted osteogenic differentiation of cells, as evidenced by increased osteocalcin gene expression in 440 μm concavities, and osteocalcin staining predominantly for 440 and 800 μm concavities, but not for 1800 μm concavities and only slightly for planar surface controls. PMID:27150445

  3. Materials design considerations involved in the fabrication of implantable bionics by metallization of ceramic substrates.

    PubMed

    Patel, Sunil; Guenther, Thomas; Dodds, Christopher W D; Kolke, Sergej; Privat, Karen L; Matteucci, Paul B; Suaning, Gregg J

    2013-01-01

    The Pt metallization of co-fired Al2O3/SiO2 substrates containing Pt feedthroughs was shown to be a suitable means to construct implantable bionics. The use of forge welding to join an electrode to such a metallized feedthrough was demonstrated and subsequently evaluated through the use of metallography and electron microscopy. Metallurgical phenomena involved in forge welding relevant to the fabrication of all types of biomedical implants are discussed within this paper. The affect of thermal profiles used in brazing or welding to build implantable devices from metal components is analysed and the case for considered selection of alloys in implant design is put forward. PMID:24109798

  4. MOCVD of ceramic and metallic films on porous substrates for dense membrane applications

    NASA Astrophysics Data System (ADS)

    Xia, Changfeng

    Fabrication of thin, dense films on porous substrates is of interest for gas separation membranes, membrane reactor, gas sensors and solid oxide fuel cells. In this study, Chemical Vapor Deposition (CVD) was used to deposit CeOsb2-doped Ysb2Osb3-stabilized ZrOsb2, perovskite SrCosb1-xFesbxOsb{3-delta} and copper films on porous substrates for the purposes of fabricating dense inorganic membranes and studying membrane fabrication process. Aerosol-assisted precursor delivery was employed to overcome the drawbacks of conventional precursor delivery and to provide better control in film composition of multicomponent membrane materials. Thin membrane films of CeOsb2-doped Ysb2Osb3-stabilized ZrOsb2 were grown under atmospheric and reduced pressures from the toluene solutions of the precursors of Zr, Y and Ce 2,2,6,6-tetramethyl-3,5-heptanedionate (tmhd). The effects of system pressure on film morphology, structure and gas-tightness were investigated. The film composition was controlled by selecting the right ratios of precursors in the solutions. Thin membrane films of perovskite SrCosb1-xFesbxOsb{3-delta} were grown under atmospheric pressure and reduced pressure from Sr, Co and Fe tmhd precursors. The relationship between film composition and the composition of precursor solution was developed. The effects of deposition pressure on film morphology, structure and gas-tightness were also studied. The influence of phase purity of SrCosb1-xFesbxOsb{3-delta} films by the system total pressure was also studied. Copper films were deposited on porous substrates for the purpose of investigating the membrane fabrication process using Cu as a model material. The film morphology, microstructure, gas-tightness and other physical properties were characterized in a systematic manner. The copper deposition rates were investigated at different precursor concentrations and the deposition temperatures by using Aerosol-Assisted CVD (AACVD) of toluenen solutions of Cu(hfac)sb2 (hfac

  5. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    SciTech Connect

    Crawford, Mary Hagerott; Olson, S. M.; Banas, M.; Park, Y. -B.; Ladous, C.; Russell, Michael J.; Thaler, Gerald; Zahler, J. M.; Pinnington, T.; Koleske, Daniel David; Atwater, Harry A.

    2008-06-01

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  6. Tribological properties of Ag/Ti films on Al2O3 ceramic substrates

    NASA Technical Reports Server (NTRS)

    Dellacorte, Christopher; Pepper, Stephen V.; Honecy, Frank S.

    1991-01-01

    Ag solid lubricant films, with a thin Ti interlayer for enhanced adhesion, were sputter deposited on Al2O3 substrate disks to reduce friction and wear. The dual Ag/Ti films were tested at room temperature in a pin-on-disk tribometer sliding against bare, uncoated Al2O3 pins under a 4.9 N load at a sliding velocity of 1 m/s. The Ag/Ti films reduced the friction coefficient by 50 percent to about 0.41 compared to unlubricated baseline specimens. Pin wear was reduced by a factor of 140 and disk wear was reduced by a factor of 2.5 compared to the baseline. These films retain their good tribological properties including adhesion after heat treatments at 850 C and thus may be able to lubricate over a wide temperature range. This lubrication technique is applicable to space lubrication, advanced heat engines, and advanced transportation systems.

  7. Method for thermally spraying crack-free mullite coatings on ceramic-based substrates

    NASA Technical Reports Server (NTRS)

    Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor); Heidorn, Raymond W. (Inventor)

    2001-01-01

    A process for depositing a mullite coating on a silicon-based material, such as those used to form articles exposed to high temperatures and including the hostile thermal environment of a gas turbine engine. The process is generally to thermally spray a mullite powder to form a mullite layer on a substrate, in which the thermal spraying process is performed so that the mullite powder absorbs a sufficient low level of energy from the thermal source to prevent evaporation of silica from the mullite powder. Processing includes deposition parameter adjustments or annealing to maintain or reestablish phase equilibrium in the mullite layer, so that through-thickness cracks in the mullite layer are avoided.

  8. Method for thermally spraying crack-free mullite coatings on ceramic-based substrates

    NASA Technical Reports Server (NTRS)

    Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor); Heidorn, Raymond W. (Inventor)

    2000-01-01

    A process for depositing a mullite coating on a silicon-based material, such as those used to form articles exposed to high temperatures and including the hostile thermal environment of a gas turbine engine. The process is generally to thermally spray a mullite powder to form a mullite layer on a substrate, in which the thermal spraying process is performed so that the mullite powder absorbs a sufficient low level of energy from the thermal source to prevent evaporation of silica from the mullite powder. Processing includes deposition parameter adjustments or annealing to maintain or reestablish phase equilibrium in the mullite layer, so that through-thickness cracks in the mullite layer are avoided.

  9. Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor

    NASA Astrophysics Data System (ADS)

    Baker, Troy; Mayo, Ashley; Veisi, Zeinab; Lu, Peng; Schmitt, Jason

    2014-10-01

    Aluminum nitride (AlN) was grown on c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot-wall reactor. The surface morphology, crystal quality, and growth rate were investigated as a function of growth temperature in the range of 1450-1575 °C. AlN templates grown to a thickness of 1 μm were optimized with double axis X-ray diffraction (XRD) rocking curve full width half maximums (FWHMs) of 135″ for the (002) and 513″ for the (102).

  10. Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO

    SciTech Connect

    Kobayashi, Atsushi; Ohta, Jitsuo; Ueno, Kohei; Oshima, Masaharu; Fujioka, Hiroshi

    2013-11-04

    Determination of the polarity of insulating semipolar AlN layers was achieved via atomic scattering spectroscopy. The back scattering of neutralized He atoms on AlN surfaces revealed the atomic alignment of the topmost layers of semipolar AlN and the ZnO substrate. Pole figures of the scattering intensity were used to readily determine the polarity of these wurtzite-type semipolar materials. In addition, we found that +R-plane AlN epitaxially grows on −R-plane ZnO, indicating that the polarity flips at the semipolar AlN/ZnO interface. This polarity flipping is possibly explained by the appearance of −c and m-faces on the −R ZnO surfaces, which was also revealed by atomic scattering spectroscopy.

  11. Method for improving the toughness of silicon carbide-based ceramics

    DOEpatents

    Tein, Tseng-Ying; Hilmas, Gregory E.

    1996-01-01

    Method of improving the toughness of SiC-based ceramics. SiC, , AlN, Al.sub.2 O.sub.3 and optionally .alpha.-Si.sub.3 N.sub.4 are hot pressed to form a material which includes AlN polytypoids within its structure.

  12. Method for improving the toughness of silicon carbide-based ceramics

    DOEpatents

    Tein, T.Y.; Hilmas, G.E.

    1996-12-03

    Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.

  13. Pb-Free Glass Paste: A Metallization-Free Die-Attachment Solution for High-Temperature Application on Ceramic Substrates

    NASA Astrophysics Data System (ADS)

    Sharif, Ahmed; Lim, Jun zhang; Made, Riko I.; Lau, Fu Long; Phua, Eric Jian Rong; Lim, Ju Dy; Wong, Chee Cheong; Gan, Chee Lip; Chen, Zhong

    2013-08-01

    A lead-free glass frit paste as a die-attach material for high-temperature microelectronic application is proposed in this study. The glass paste containing Bi-based powder with a moderate amount of solvent was used for joining Si dice on ceramic substrates without any metallization preparation for either of the bonding surfaces. The die was bonded to a ceramic substrate at 430°C for 10 min. The study focuses on the mechanical and microstructural characterization of the joints with Si dice on two different types of ceramic substrate. Shear strength measurements were carried out at both ambient and 250°C to evaluate room- and high-temperature performance. Furthermore, the effect of aging at 300°C for 500 h on the mechanical properties is presented. The results of the mechanical and microstructural characterization demonstrate that low-temperature glass frit bonding is an effective die-attach method for harsh-environment electronic packaging.

  14. Effects of varying oxygen partial pressre on molten silicon: ceramic substrate interactions, final report

    SciTech Connect

    Ownby, P.D.; Romero, H.V.; Barsoum, M.W.

    1980-04-01

    The objective of the contract is to investigate the interaction of molten silicon with various die and container candidate materials under varying oxygen partial pressures. This has been done by making silicon sessile drop contact angle measurements on the candidate materials to determine the degree to which silicon wets these substances, and subsequently sectioning the post-sessile drop experiment samples and taking photomicrographs of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Several different materials supplied by JPL have been investigated in this manner, i.e., hot pressed silicon nitride (from both Kawecki Berylco, Inc. (KBI) and AVCO), CNTD silicon nitride coated on hot pressed silicon nitride (Chemetal-Eagle Picher), CVD silicon carbide coated on graphite (Ultracarbon), and ..cap omega.. Sialon (Battelle). Results are described. The oxygen concentrations in the EFG silicon ribbon furnace at Mobil Tyco Solar Energy Corp., Waltham, Massachusetts, and in the JPL silicon sessile drop furnace at Pasadena, California, were measured using the portable thoria-yttria solid solution electrolyte oxygen sensor constructed at UMR for this purpose. Oxygen partial pressures of 10/sup -7/ and 10/sup -8/ atm. were obtained for the Mobil Tyco and JPL facilities, respectively.

  15. Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

    NASA Technical Reports Server (NTRS)

    Ownby, D. P.; Barsoum, M. W.

    1980-01-01

    The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions.

  16. Oxidation behaviour of a Ti2AlN MAX-phase coating

    NASA Astrophysics Data System (ADS)

    Wang, Qimin; Garkas, W.; Flores Renteria, A.; Leyens, C.; Sun, Chao; Kim, Kwangho

    2011-10-01

    In this paper, we reported the oxidation behaviour of Ti2AlN coatings on a -TiAl substrate. The coatings composed mainly of Ti2AlN MAX phase were obtained by magnetron sputtering and subsequent vacuum annealing. Isothermal oxidation tests at 700-900 °C were performed in air. The results indicated that the oxidation resistance of the -TiAl alloy can be improved by depositing a Ti2AlN layer on the alloy surface, especially at high temperatures. An Al-rich oxide scale formed on the coating surfaces during oxidation. This scale acts as diffusion barrier blocking the ingress of oxidation, and effectively protects the coated alloys from further oxidation attack.

  17. Effect of process conditions on the microstructural formation of dc reactively sputter deposited AlN

    SciTech Connect

    Ekpe, Samuel D.; Jimenez, Francisco J.; Dew, Steven K.

    2010-09-15

    Thin film aluminum nitride (AlN), because of its attractive properties, is a material with many applications. Its microstructure and hence properties are greatly influenced by the deposition process conditions. In this work, AlN was reactively deposited in a dc magnetron sputtering system at different proportions of nitrogen in the process gas mixture and at different process conditions. The microstructure and composition of the films were analyzed using x-ray diffraction data, energy dispersive spectroscopy, and scanning electron microscopy. Results show that for a process gas pressure of 0.67 Pa, a magnetron power of 100 W, and a substrate-target distance of 10 cm, a near stoichiometeric AlN can be prepared at nitrogen proportions as low as 20%. At these process conditions, (002) was the preferred crystal orientation. Dense fibrous structures were obtained, especially at low deposition rates with high proportions of nitrogen. Increase in magnetron power and decrease in distance result in a more porous structure. High kinetic energies (average) of the sputtered Al particles and high deposition rates tend to favor AlN(101) formation, while low kinetic energies of the Al particles and low deposition rates generally favor more of the AlN(100) formation.

  18. Effect of AC target power on AlN film quality

    SciTech Connect

    Knisely, Katherine Grosh, Karl

    2014-09-01

    The influence of alternating current (AC) target power on film stress, roughness, and x-ray diffraction rocking curve full width half maximum (FWHM) was examined for AlN films deposited using S-gun magnetron sputtering on insulative substrates consisting of Si wafers with 575 nm thermal oxide. As the AC target power was increased from 5 to 8 kW, the deposition rate increased from 9.3 to 15.9 A/s, film stress decreased from 81 to −170 MPa, and the rocking curve FWHM increased from 0.98 to 1.03°. AlN film behavior is observed to change with target life; films deposited at 200 kWh target life were approximately 40 MPa more compressive and had 0.02° degree higher rocking curve FWHM values than films deposited at 130 kWh. AlN films deposited in two depositions were compared with films deposited in a single deposition, in order to better characterize the growth behavior and properties of AlN films deposited on an existing AlN film, which is not well understood. Two deposition films, when compared with single deposition films, showed no variation in residual stress trends or grain size behavior, but the average film roughness increased from 0.7 to 1.4 nm and rocking curve FWHM values increased by more than 0.25°.

  19. Deposition of ultrathin AlN films for high frequency electroacoustic devices

    SciTech Connect

    Felmetsger, Valery V.; Laptev, Pavel N.; Graham, Roger J.

    2011-03-15

    The authors investigate the microstructure, crystal orientation, and residual stress of reactively sputtered aluminum nitride (AlN) films having thicknesses as low as 200 down to 25 nm. A two-step deposition process by the dual cathode ac (40 kHz) powered S-gun magnetron enabling better conditions for AlN nucleation on the surface of the molybdenum (Mo) bottom electrode was developed to enhance crystallinity of ultrathin AlN films. Using the two-step process, the residual in-plane stress as well as the stress gradient through the film thickness can be effectively controlled. X-ray rocking curve measurements have shown that ultrathin films grown on Mo using this technology are highly c-axis oriented with full widths at half maximum of 1.8 deg. and 3.1 deg. for 200- and 25-nm-thick films, respectively, which are equal to or even better than the results previously reported for relatively thick AlN films. High-resolution transmission electron microscopy and fast Fourier transform analyses have confirmed strong grain orientation in 25-100-nm-thick films. A fine columnar texture and a continuous lattice microstructure within a single grain from the interface with the Mo substrate through to the AlN surface have been elicited even in the 25-nm-thick film.

  20. Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

    SciTech Connect

    Kita, Takashi; Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro; Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro; Ishihara, Tsuguo; Izumi, Hirokazu

    2015-04-28

    We studied energy transfer from AlN to doped Gd{sup 3+} ions as a function of the post-thermal annealing temperature. Gd-doped AlN thin films were deposited on fused-silica substrates using a reactive radio-frequency magnetron sputtering technique. The film is a c-axis oriented polycrystal. The intra-orbital electron transition in Gd{sup 3+} showed an atomically sharp luminescence at 3.9 eV (318 nm). The photoluminescence (PL) excitation spectrum exhibited a resonant peak, indicating efficient energy transfer from the host AlN crystal to Gd{sup 3+} ions. The PL intensity increases approximately ten times by thermal annealing. The PL decay lifetime becomes long with annealing, and mid-gap luminescence relating to the crystal defects in AlN was also found to be reduced by annealing. These results suggest that energy dissipation of excited carriers in AlN was suppressed by annealing, and the efficiency of energy transfer into Gd{sup 3+} was improved.

  1. Formation mechanism of AlN whiskers on sapphire surfaces heat-treated in a mixed flow of H2 and N2

    NASA Astrophysics Data System (ADS)

    Takada, Kazuya; Nomura, Kazushiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori; Kumagai, Yoshinao

    2016-05-01

    The formation mechanism of AlN whiskers on sapphire substrates during heat treatment in a mixed flow of H2 and N2 was investigated in the temperature range of 980-1380 °C. AlN whiskers grew above 1030 °C after covering the sapphire surface with a thin AlN layer. The existence of pits on the sapphire surface beneath the thin AlN layer was observed. Both AlN whisker and pit densities of samples were on the same order of 108 cm-2. These results suggested the following mechanism. First, the sapphire surface reacts with H2, and the generated Al gas reacts with N2 to form a thin AlN layer on sapphire. Then, the sapphire surface reacts with H2 diffusing to the AlN/sapphire interface. The Al gas escapes through dislocations in the AlN layer to leave pits on the sapphire surface, and finally reacts with N2 to form AlN whiskers on the top surface.

  2. Low Cost Glass and Glass-Ceramic Substrates for Thin-Film Silicon Solar Cells: Final Subcontract Report, 25 January 2001

    SciTech Connect

    Ast, D.; Nemchuk, N.; Krasula, S.

    2002-07-01

    This report describes how Cornell University researchers developed several low-cost and simple barrier layers and tested their effectiveness both analytically (by SIMS) and by evaluating the electrical characteristics of devices fabricated on barrier-coated substrates. Devices fabricated included both majority-carrier devices (thin-film transistors) and minority-carrier devices (p-i-n junction diodes simulating solar cells) using various deposition techniques including the chemical vapor deposition of polysilicon from silane at low pressures (at Cornell University) and from dichlorosilane at atmospheric pressure (cooperation with Neudeck at Purdue University). The structure of the films deposited was investigated by using TEM and X-ray analysis. The performance of the minority- and majority-carrier devices fabricated on barrier-coated glass ceramic substrates was found to be identical to devices fabricated on control substrates of oxidized silicon and fused silica.

  3. Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

    NASA Astrophysics Data System (ADS)

    Fukuyama, Hiroyuki; Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa

    2016-05-01

    The N2–CO gas annealing technique was demonstrated to improve the crystalline quality of the AlN layer on sapphire. 300-nm-thick AlN layers were fabricated on sapphire substrates by a metal–organic vapor phase epitaxy method. The AlN layers were annealed in N2 and/or N2–CO gas atmosphere at 1923–1973 K for 0.5–4 h. Many pits and voids were observed on the AlN surface annealed in N2 atmosphere at 1973 K for 2 h. The rough surface was, however, much improved for the AlN annealed in N2–CO gas atmosphere. The thermodynamic principle of the N2–CO gas annealing technique is explained in this paper on the basis of the phase stability diagram of the Al2O3–AlN–C–N2–CO system. Voids and γ-aluminum oxynitride (γ-AlON) at the AlN/sapphire interface formed during the annealing, which is also explained on the basis of the phase stability diagram. The in-plane epitaxial relationships among AlN, γ-AlON, and sapphire are presented, and misfits among them are discussed.

  4. Microstructure of GaN epitaxy on SiC using AlN buffer layers

    SciTech Connect

    Ponce, F.A.; Krusor, B.S.; Major, J.S. Jr.; Plano, W.E.; Welch, D.F.

    1995-07-17

    The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X-ray diffraction measurements show negligible strain in the epilayer, and a long-range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of {similar_to}10{sup 9} cm{sup {minus}2}. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  5. Reactive sputter-deposition of AlN films by dense plasma focus

    SciTech Connect

    Sadiq, Mehboob; Ahmad, S.; Shafiq, M.; Zakaullah, M.; Ahmad, R.; Waheed, A.

    2006-11-15

    A low energy (1.45 kJ) dense plasma focus device is used to deposit thin films of aluminum nitride (AlN) at room temperature on silicon substrates. For deposition of films, a conventional hollow copper anode is replaced with a solid aluminum anode and nitrogen is used as fill gas. The films are deposited using a multiple number of focus shots by placing the substrate in front of the anode. The deposited films are characterized using x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, and a microhardness test. The XRD analysis of the films shows that the deposited films show strong c-axis alignment. The Raman spectra of the films indicate that the deposited films are under compressive stress and crystalline quality decreases with increasing number of focus shots. The microhardness results point toward the uniform deposition of hard AlN layers on silicon substrates.

  6. Atomically smooth and homogeneously N-polar AlN film grown on silicon by alumination of Si{sub 3}N{sub 4}

    SciTech Connect

    Hu, Jiannan; Hao, Zhibiao; Niu, Lang; Yanxiong E,; Wang, Lai; Luo, Yi

    2013-04-08

    By using an alumination process of Si{sub 3}N{sub 4} at high temperature with aluminum flux irradiation for sufficient time, homogeneously N-polar and atomically smooth AlN film has been realized on silicon substrate with inversion domain suppressed to less than 3.0 Multiplication-Sign 10{sup 6} cm{sup -2} and root mean square surface roughness of {approx}0.4 nm. A general interface model is proposed to explain the mechanism of polarity determination. The sharp AlN(0001)/Si(111) interface exhibits 5:4 coincidence domain matching, resulting in an almost fully relaxed AlN film.

  7. Interface magnetoelectric effect in the layered heterostructures with Co layers on the polished and ion-beam planarized ceramic PZT substrates

    NASA Astrophysics Data System (ADS)

    Stognij, Alexandre I.; Novitskii, Nickolaj; Poddubnaya, Natalia; Sharko, Sergei; Ketsko, Valerij; Mikhailov, Vladimir; Dyakonov, Vladimir; Szymczak, Henryk

    2015-01-01

    The low-frequency room temperature interface magnetoelectric (ME) effect was observed in the layered heterostructures comprising the ferromagnetic (FM) Co layers and ferroelectric (FE) ceramic substrates on the base of lead zirconate titanate PbZr0.45Ti0.55O3 (PZT). The Co films 1-12 μm in thickness were deposited by ion-beam sputtering/deposition technics onto the 400 μm PZT substrates. Results of X-ray, magnetic and ME experiments have shown the existence of ME effect in Co/PZT/Co and (Co/PZT/Co)3 heterostructures obtained by the above mentioned techniques being independent on ferromagnetic/ferroelectric interface roughness. The values of ME voltage coefficient in heterostructures with ion-beam planarized PZT surfaces are much higher than that in heterostructures with mechanochemically polished ceramic substrate surfaces. The heterostructures possess ME effect of the same order as those obtained by means of the mechanical bonding of FM and FE sheets with organic binders and have the typical ME hysteresis curves. The structures obtained are perspective for application as energy-independent elements in magnetic field sensors and magnetic memory.

  8. Method for preparing thin-walled ceramic articles of configuration

    DOEpatents

    Holcombe, C.E.; Powell, G.L.

    1975-11-01

    A method for preparing a hollow thin-walled ceramic product is described. Ceramic powder is plasma-sprayed onto a concave surface of a substrate having a coefficient of thermal expansion less than that of the ceramic. The coated substrate is heated to sinter the ceramic and then cooled to effect a separation of the ceramic product from the substrate. (auth)

  9. Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chen, X. W.; Jia, C. H.; Chen, Y. H.; Wang, H. T.; Zhang, W. F.

    2014-03-01

    Epitaxial aluminum nitride (AlN) films with c-axis orientation were grown on both (1 1 1) MgO and c-sapphire substrates by laser molecular beam epitaxy. The in-plane epitaxial relationships were determined to be [1 1 \\bar{{2}} 0]AlN‖[0 \\bar{{1}} 1]MgO and [1 \\bar{{1}} 0 0]AlN‖[1 1 \\bar{{2}} 0]sapphire, and the lattice mismatch was 4.2% and 13.2% for AlN films on MgO and sapphire, respectively. The AlN films were shown to be Al- and N-polar on MgO and sapphire, respectively. The former is assumed to be caused by the centre of inversion symmetry of (1 1 1) MgO substrate, while the latter is due to the O polarity of sapphire. The full-width at half-maximum of the ω-scanning spectrum for AlN film on (1 1 1) MgO substrate is smaller than that on the c-sapphire substrate. The optical band-gap energies for AlN films grown on MgO and sapphire were found to be 5.93 and 5.84 eV, close to the standard band gap of 6.2 eV, and the calculated Urbach energies were 0.27 eV and 0.53 eV, respectively. These results indicate a lower amorphous content and/or less defects/impurities in Al-polar than N-polar AlN.

  10. Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

    SciTech Connect

    Chen, Meei-Ru; Chen, Hou-Guang; Kao, Hui-Ling Wu, Ming-Guei; Tzou, An-Jye; Chen, Jyh Shin; Chou, Hsiung

    2015-05-15

    AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN epitaxial films was characterized by x-ray diffractometry and transmission electron microscopy. The films exhibit smooth surface with root-mean-square roughness as small as 0.7 nm evaluated by atomic force microscope. The optical transmittance spectra show a steep absorption edge at the wavelength of 200 nm and a high transmittance of over 80% in the visible range. The band-edge transition (6.30 eV) of AlN film was observed in the cathodoluminescence spectrum recorded at 11 K. The spectral response of metal–semiconductor–metal photodetectors constructed with AlN/sapphire reveals the peak responsivity at 200 nm and a UV/visible rejection ratio of about two orders of magnitude. The results of this low temperature deposition suggest the feasibility of the epitaxial growth of AlN on sapphire substrates and the incorporation of the AlN films in the surface acoustic wave devices and the optical devices at deep ultraviolet region.

  11. Effect of firing conditions on thick film microstructure and solder joint strength for low-temperature, co-fired ceramic substrates

    SciTech Connect

    Hernandez, C.L.; Vianco, P.T.; Rejent, J.A.

    2000-01-04

    Low-temperature, co-fired ceramics (LTCC) are the substrate material-of-choice for a growing number of multi-chip module (MCM) applications. Unlike the longer-standing hybrid microcircuit technology based upon alumina substrates, the manufacturability and reliability of thick film solder joints on LTCC substrates have not been widely studied. An investigation was undertaken to fully characterize solder joints on these substrates. A surface mount test vehicle with Daisy chain electrical connections was designed and built with Dupont{trademark} 951 tape. The Dupont{trademark} 4569 thick film ink (Au76-Pt21-Pd3 wt.%) was used to establish the surface conductor pattern. The conductor pattern was fired onto the LTCC substrate in a matrix of processing conditions that included: (1) double versus triple prints, (2) dielectric window versus no window, and (3) three firing temperatures (800 C, 875 C and 950 C). Sn63-Pb37 solder paste with an RMA flux was screen printed onto the circuit boards. The appropriate packages, which included five sizes of chip capacitors and four sizes of leadless ceramic chip carriers, were placed on the circuit boards. The test vehicles were oven reflowed under a N{sub 2} atmosphere. Nonsoldered pads were removed from the test vehicles and the porosity of their thick film layers was measured using quantitative image analysis in both the transverse and short transverse directions. A significant dependence on firing temperature was recorded for porosity. The double printed substrates without a dielectric window revealed a thick film porosity of 31.2% at 800 C, 26.2% at 875 C and 20.4% at 950 C. In contrast, the thick film porosity of the triple printed substrates with a dielectric window is 24.1% at 800 C, 23.2% at 875 C and 17.6% at 950 C. These observations were compared with the shear strength of the as-fabricated chip capacitor solder joints to determine the effect of firing conditions on solder joint integrity. The denser films from the higher

  12. Ceramic electrolyte coating methods

    DOEpatents

    Seabaugh, Matthew M.; Swartz, Scott L.; Dawson, William J.; McCormick, Buddy E.

    2004-10-12

    Processes for preparing aqueous suspensions of a nanoscale ceramic electrolyte material such as yttrium-stabilized zirconia. The invention also includes a process for preparing an aqueous coating slurry of a nanoscale ceramic electrolyte material. The invention further includes a process for depositing an aqueous spray coating slurry including a ceramic electrolyte material on pre-sintered, partially sintered, and unsintered ceramic substrates and products made by this process.

  13. Effect of Thick Film Firing Conditions on the Solderability and Structure of Au-Pt-Pd Conductor for Low-Temperature, Co-Fired Ceramic Substrates

    SciTech Connect

    Hernandez, C.L; Vianco, P.T.

    1999-03-16

    Low-temperature, co-fired ceramics (LTCC) are the substrate material-of-choice for a growing number of multi-chip module (MCM) applications. Unlike the longer-standing hybrid microcircuit technology based upon alumina substrates, the manufacturability and reliability of thick film solder joints on LTCC substrates have not been widely studied. An investigation was undertaken to fully characterize such solder joints. A surface mount test vehicle with Daisy chain electrical connections was designed and built with Dupont{trademark} 951 tape. The Dupont{trademark} 4569 thick film ink (Au76-Pt21 -Pd3 wt.%) was used to establish the surface conductor pattern. The conductor pattern was fired onto the LTCC substrate in a matrix of process conditions that included: (1) double versus triple prints, (2) dielectric frame versus no frame, and (3) three firing temperatures (800 C, 875 C and 950 C). Pads were examined from the test vehicles. The porosity of the thick film layers was measured using quantitative image analysis in both the transverse and short transverse directions. A significant dependence on firing temperature was recorded for porosity. Solder paste comprised of Sn63-Pb37 powder with an RMA flux was screen printed onto the circuit boards. The appropriate components, which included chip capacitors of sizes 0805 up to 2225 and 50 mil pitch, leadless ceramic chip carriers having sizes of 16 I/O to 68 I/O, were then placed on the circuit boards. The test vehicles were oven reflowed under a N{sub 2} atmosphere. The solderability of the thick film pads was also observed to be sensitive to the firing conditions. Solderability appeared to degrade by the added processing steps needed for the triple print and dielectric window depositions. However, the primary factor in solderability was the firing temperature. Solderability was poorer when the firing temperature was higher.

  14. Getting Better: ALN and Student Success

    ERIC Educational Resources Information Center

    Moore, Janet C.; Sener, John; Fetzner, Marie

    2009-01-01

    In the U.S., only 38 of every 100 ninth graders enroll in college; of these 38, only 18 complete bachelors' degrees within six years. Asynchronous learning networks (ALN)--asynchronous, highly interactive, instructor-led, resource-rich, cohort-based learning--can yield high success rates. Growing demand for online education and the expectation…

  15. Interfacial characterization of a SiC fiber-reinforced AlN composite

    SciTech Connect

    Park, K.; Vasilos, T.; Sung, C. . Dept. of Chemical and Nuclear Engineering)

    1995-01-01

    In this study, an attempt was made to improve the mechanical properties of AlN by the incorporation of SiC (SCS-6) fibers (TEXTRON Specialty Materials, Lowell, MA) in a unidirectional array. The SiC fibers are one of the most important reinforcements for ceramic- and metal-matrix composites due to high tensile strength (3,450 MPs), high tensile modulus (400 GPa), and low density (3.0 g/cc). The SiC fiber (15 vol %)-reinforced AlN composite was fabricated by hot-pressing in vacuum. The microstructure and chemistry of interfacial regions in as-fabricated and crept composite were characterized using analytical transmission electron microscopy, in order to investigate the nature of the reaction between the fiber and matrix during both composite fabrication and creep tests and to understand the reinforcing effects of SiC fiber in the AlN matrix. Interfacial characteristics of the composite play an important role in influencing the mechanical properties of the composite.

  16. Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg-Si codoping pair by MOCVD

    NASA Astrophysics Data System (ADS)

    Majid Soomro, Abdul; Wu, Chenping; Lin, Na; Zheng, Tongchang; Wang, Huachun; Chen, Hangyang; Li, Jinchai; Li, Shuping; Cai, Duanjun; Kang, Junyong

    2016-03-01

    We report the modified pulse growth method together with an alternating introduction of larger-radius impurity (Mg) for the quality improvement and misfit strain release of an AlN epitaxial layer by the metal-organic chemical vapour deposition (MOCVD) method. Various pulse growth methods were employed to control the migration of Al atoms on the substrate surface. The results showed that the pulse time and overlapping of V/III flux is closely related with the enhancement of the 2D and 3D growth mode. In order to reduce the misfit strain between AlN and sapphire, an impurity of larger atomic radius (e.g. Mg) was doped into the AlN lattice to minimize the rigidity of the AlN epilayer. It was found that the codoping of Mg-Si ultrathin layers could significantly minimize the residual strain as well as the density of threading dislocations.

  17. Optimal microelectromechanical systems (MEMS) device for achieving high pyroelectric response of AlN

    NASA Astrophysics Data System (ADS)

    Kebede, Bemnnet; Coutu, Ronald A.; Starman, LaVern

    2014-03-01

    This paper discusses research being conducted on aluminum nitride (AlN) as a pyroelectric material for use in detecting applications. AlN is being investigated because of its high pyroelectric coefficient, thermal stability, and high Curie temperature. In order to determine suitability of the pyroelectric properties of AlN for use as a detector, testing of several devices was conducted. These devices were fabricated using microelectromechanical systems (MEMS) fabrication processes; the devices were also designed to allow for voltage and current measurements. The deposited AlN films used were 150 nm - 300 nm in thickness. Thin-films were used to rapidly increase the temperature response after the thermal stimulus was applied to the pyroelectric material. This is important because the pyroelectric effect is directly proportional to the rate of temperature change. The design used was a face-electrode bridge that provides thermal isolation which minimizes heat loss to the substrate, thereby increasing operation frequency of the pyroelectric device. A thermal stimulus was applied to the pyroelectric material and the response was measured across the electrodes. A thermal imaging camera was used to monitor the changes in temperature. Throughout the testing process, the annealing temperatures, type of layers, and thicknesses were also varied. These changes resulted in improved MEMS designs, which were fabricated to obtain an optimal design configuration for achieving a high pyroelectric response. A pyroelectric voltage response of 38.9 mVp-p was measured without filtering, 12.45 mVp-p was measured in the infrared (IR) region using a Si filter, and 6.38 mVp-p was measured in the short wavelength IR region using a long pass filter. The results showed that AlN's pyroelectric properties can be used in detecting applications.

  18. Structural, mechanical and piezoelectric properties of polycrystalline AlN films sputtered on titanium bottom electrodes

    NASA Astrophysics Data System (ADS)

    Pătru, M.; Isac, L.; Cunha, L.; Martins, P.; Lanceros-Mendez, S.; Oncioiu, G.; Cristea, D.; Munteanu, D.

    2015-11-01

    Polycrystalline AlN coatings were deposited on Ti-electrode films by reactive magnetron sputtering. During the deposition, processing parameters such as the reactive gas pressure and time of deposition have been varied. The purpose was to obtain an optimized AlN/Ti system coating with suitable properties for applications such as piezoelectric sensors, which could monitor the wear rate and the remaining coating life of a specific part. The chemical composition, the structure, and the morphology of the multilayered films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy and atomic force microscopy techniques, respectively. These measurements showed the formation of highly (1 0 1), (1 0 2) and (1 0 3) oriented AlN films with piezoelectric and mechanical properties suitable for the desired purpose. A densification of the AlN coating was also observed, caused by lower nitrogen pressures, which has led to an improvement of the crystallinity along with an increase of hardness. The coating stability at high temperatures was also examined. Consequently, an improvement of the piezoelectric properties of the AlN films was observed, inferred from the enhancement of c-axis (0 0 2) orientation after annealing. Furthermore, the mechanical characteristics (hardness and Young's modulus) were significantly improved after heat treatment. These two parameters decrease rapidly with the increase of the indentation depth, approaching constant values close to those of the substrate after annealing. Thus, thermal annealing promotes not only the rearrangement of Al-N network, but also a surface hardening of the film, caused by a nitriding process of unsaturated Al atoms.

  19. Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

    NASA Astrophysics Data System (ADS)

    Chen, Shuo-Wei; Yang, Young; Wen, Wei-Chih; Li, Heng; Lu, Tien-Chang

    2016-03-01

    Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

  20. Single phase (112bar2) AlN grown on (101bar0) sapphire by metalorganic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Dinh, Duc V.; Conroy, M.; Zubialevich, V. Z.; Petkov, N.; Holmes, J. D.; Parbrook, P. J.

    2015-03-01

    Heteroepitaxial growth of AlN buffer layers directly on (101bar0) sapphire substrates by metalorganic vapour phase epitaxy has been investigated. A single-step growth procedure without a sapphire nitridation was employed resulting in mirror-like crack free ≈ 1.1 - 1.6 μm thick AlN layers of single phase (112bar2) orientation. Trimethylaluminum pre-dose time and reactor pressure were optimized for surface roughness and crystal quality. The crystal quality was found to degrade with increasing pre-dose time and also reactor pressure. The smallest full width at half maximum value for on-axis X-ray rocking curve of the (112bar2) AlN layers was about 610 arcsec and 1480 arcsec along [1bar1bar23]AlN and [11bar00]AlN, respectively. The surface roughness, measured by atomic force microscopy using a 10 × 10 μm2 area, was in the range 2.6-3.5 nm. A basal stacking fault density of (7±1)×105 cm-1 was estimated by transmission electron microscopy.

  1. Process for producing advanced ceramics

    DOEpatents

    Kwong, Kyei-Sing

    1996-01-01

    A process for the synthesis of homogeneous advanced ceramics such as SiC+AlN, SiAlON, SiC+Al.sub.2 O.sub.3, and Si.sub.3 N.sub.4 +AlN from natural clays such as kaolin, halloysite and montmorillonite by an intercalation and heat treatment method. Included are the steps of refining clays, intercalating organic compounds into the layered structure of clays, drying the intercalated mixture, firing the treated atmospheres and grinding the loosely agglomerated structure. Advanced ceramics produced by this procedure have the advantages of homogeneity, cost effectiveness, simplicity of manufacture, ease of grind and a short process time. Advanced ceramics produced by this process can be used for refractory, wear part and structure ceramics.

  2. Ceramic electrolyte coating and methods

    DOEpatents

    Seabaugh, Matthew M.; Swartz, Scott L.; Dawson, William J.; McCormick, Buddy E.

    2007-08-28

    Aqueous coating slurries useful in depositing a dense coating of a ceramic electrolyte material (e.g., yttrium-stabilized zirconia) onto a porous substrate of a ceramic electrode material (e.g., lanthanum strontium manganite or nickel/zirconia) and processes for preparing an aqueous suspension of a ceramic electrolyte material and an aqueous spray coating slurry including a ceramic electrolyte material. The invention also includes processes for depositing an aqueous spray coating slurry including a ceramic electrolyte material onto pre-sintered, partially sintered, and unsintered ceramic substrates and products made by this process.

  3. Micro-machined heat pipes in silicon MCM substrates

    SciTech Connect

    Benson, D.A.; Mitchell, R.T.; Tuck, M.R.

    1997-01-01

    Multichip modules (MCMs) containing power components need a substrate with excellent heat spreading capability to both avoid hot spots and to move dissipation heat toward the system heat sinks. Polycrystalline diamond is an excellent MCM heat spreading substrate but remains several orders of magnitude too expensive and somewhat more difficult to process than conventional mother-board materials. Today`s power MCMs concentrate on moderately priced silicon wafers and aluminum nitride ceramic with their improved thermal conductivity and good thermal expansion match to power semiconductor components in comparison to traditional alumina and printed wiring board materials. However, even silicon and AlN substrates are thermally challenged by designers needs. The authors report on the integral fabrication of micro-heat pipes embedded in silicon MCM substrates (5 x 5 cm) by the use of micromachined capillary wick structures and hermetic micro-cavities. This passive microstructure results in more than a 5 times improvement in heat spreading capability of the silicon MCM substrate over a large range of power densities and operating temperatures. Thus diamond-like cooling is possible at silicon prices.

  4. Ordered Silica Nanoparticles Grown on a Three-Dimensional Carbon Fiber Architecture Substrate with Siliconborocarbonitride Ceramic as a Thermal Barrier Coating.

    PubMed

    Zhao, Guangdong; Hu, Ping; Zhou, Shanbao; Chen, Guiqing; An, Yumin; Cheng, Yehong; An, Jiadong; Zhang, Xinghong; Han, Wenbo

    2016-02-17

    Hierarchical structure consisting of ordered silica nanoparticles grown onto carbon fiber (CF) has been fabricated to improve the interfacial properties between the CFs and polymer matrix. To improve the reactivity of CFs, their surface was modified using poly(1,4-phenylene diisocyanate) (PPDI) via in situ polymerization, which also resulted in the distribution of numerous isocyanate groups on the surface of CFs. Silica nanoparticles were modified on the interface of CF-PPDI by chemical grafting method. The microstructure, chemical composition, and interfacial properties of CFs with ordered silica nanoparticles were comprehensively investigated by scanning electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. Results indicated an obvious increase in the interfacial shear strength, compared to that of CF precursor, which was attributed to silica nanoparticles interacting with the epoxy resin. Furthermore, siliconborocarbonitride (SiBCN) ceramic was used as thermal barrier coating to enhance 3D CF architecture substrate antioxidant and ablation properties. Thermogravimetric results show that the thermal stability of the CF with SiBCN ceramic layer has a marked increase at high temperature. PMID:26799760

  5. Ceramic Nano-particle/Substrate Interface Bonding Formation Derived from Dynamic Mechanical Force at Room Temperature: HRTEM Examination

    NASA Astrophysics Data System (ADS)

    Yao, Hai-Long; Yang, Guan-Jun; Fan, Sheng-Qiang; Li, Cheng-Xin; Li, Chang-Jiu

    2015-04-01

    The bonding of TiO2 nano-particle/substrate is a critical factor influencing the performance of dye-sensitized solar cells. In order to reveal the bonding properties at TiO2 nano-particle/substrate interface, high-resolution transmission electron microscopy (HRTEM) analysis was adopted to TiO2 coatings prepared by three different approaches. In the HRTEM analysis, the effective bonding mode is allowed to distinguish from the false image overlapping. Results show that large areas of effective bonding between nano-TiO2 particles and the substrate surface formed in the room temperature cold sprayed coating and mechanically pressed coating, while only limited interface areas with the effective bonding were observed in the coating deposited by non-pressed method. These results confirm that both high impact pressure during the room temperature cold spraying and mechanical pressure contribute to the bonding formation at the particle/substrate interface.

  6. Effect of pre-deposition RF plasma etching on wafer surface morphology and crystal orientation of piezoelectric AlN thin films.

    PubMed

    Felmetsger, V; Mikhov, M; Laptev, P

    2015-02-01

    In this work, we describe the design and operation of a planarized capacitively coupled RF plasma module and investigate the effects of non-reactive RF plasma etching on Si (100) wafer surface morphology and crystal orientation of Al bottom electrodes and subsequently deposited AlN films. To ensure formation of highly (111) textured Al electrode, a thin 25-nm AlN seed layer was grown before the Al deposition. The seed layer's orientation efficiency improved with increasing the RF power from 70 to 300 W and resulted in narrowing the Al (111) rocking curves. AFM and XRD data have shown that crystal orientations of both the electrode and reactively sputtered AlN film are considerably improved when the substrate micro roughness is reduced from an ordinary level of a few nanometers to atomic level corresponding to root mean square roughness as low as about 0.2 to 0.3 nm. The most perfectly crystallized film stacks of 100-nm Al and 500-nm AlN were obtained in this work using etching in Ar plasma optimized to create an atomically smooth, epi-ready Si surface morphology that enables superior AlN seed layer nucleation conditions. X-ray rocking curves around the Al (111) and AlN (0002) diffraction peaks exhibited extremely low FWHM values of 0.68° and 1.05°, respectively. PMID:25643087

  7. Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

    NASA Astrophysics Data System (ADS)

    Bryan, Isaac; Bryan, Zachary; Mita, Seiji; Rice, Anthony; Tweedie, James; Collazo, Ramón; Sitar, Zlatko

    2016-03-01

    AlN epitaxial thin films were grown on both vicinal (0001)-oriented native single crystal AlN substrates and AlN templates grown on vicinal (0001)-oriented sapphire to develop a surface kinetic framework for the control of surface morphology. A Burton, Cabrera, and Frank (BCF) theory-based model is formulated and utilized to understand the dependence of the surface kinetics on the vapor supersaturation, σ, and substrate misorientation angle, α. The surface energy of the Al-polar surface of AlN was experimentally determined using BCF theory to be 149±8 meV/Å2. The critical misorientation angle for the onset of step-bunching was determined to be ~0.25° for a growth rate of 500 nm/h and temperature of 1250 °C. Transitioning from a surface with 2D nuclei to one with bilayer steps required a decrease in σ or an increase in α, whereas the suppression of step-bunching required an increase in σ or a decrease in α.

  8. High-temperature oxidation resistant (Cr, Al)N films synthesized using pulsed bias arc ion plating

    NASA Astrophysics Data System (ADS)

    Zhang, Min; Lin, Guoqiang; Lu, Guoying; Dong, Chuang; Kim, Kwang Ho

    2008-09-01

    (Cr, Al)N films were deposited by pulsed bias arc ion plating on HSS and 316L stainless steel substrates. With pulsed substrate bias ranging from -100 V to -500 V, the effect of pulsed bias on film composition, phase structure, deposition rate and mechanical properties was investigated by EDX, XRD, SEM, nanoindentation and scratch measurements. The high-temperature (up to 900 °C) oxidation resistance of the films was also evaluated. The results show that Al contents and deposition rates decrease with increasing pulsed bias and the ratio of (Cr + Al)/N is almost constant at 0.95. The as-deposited (Cr, Al)N films crystallize in the pseudo-binary (Cr, Al)N and Al phases. The film hardness increases with increasing bias and reaches the maximum 21.5 GPa at -500 V. The films deposited at -500 V exhibit a high adhesion force, about 70 N, and more interestingly good oxidation resistance when annealed in air at 900 °C for 10 h.

  9. Thermal conductivity of bulk and nanowire InAs, AlN, and BeO polymorphs from first principles

    SciTech Connect

    Li, Wu; Mingo, Natalio

    2013-11-14

    We compute the thermal conductivity of the alternative zincblende (ZB) and wurtzite (WZ) phases of InAs, AlN, and BeO. The bulk thermal conductivity of the ZB phase of BeO is predicted to be even higher than that of its WZ phase (the highest amongst all ceramics used in electronic technology). Our calculations agree well with the available experimental measurements for bulk ZB InAs, WZ AlN, WZ BeO, and WZ and ZB InAs nanowires, and we provide predictions for the remaining cases. The predicted good thermal conductor ZB BeO might have interesting applications in improved heat sinks for high performance semiconductor electronics.

  10. High temperature ceramic articles having corrosion resistant coating

    DOEpatents

    Stinton, David P.; Lee, Woo Y.

    1997-01-01

    A ceramic article which includes a porous body of SiC fibers, Si.sub.3 N.sub.4 fibers, SiC coated fibers or Si.sub.3 N.sub.4 coated fibers, having at least one surface, the article having a coating of AlN adherently disposed throughout at least a portion of the porous body.

  11. Ceramic coatings on smooth surfaces

    NASA Technical Reports Server (NTRS)

    Miller, R. A. (Inventor); Brindley, W. J. (Inventor); Rouge, C. J. (Inventor)

    1991-01-01

    A metallic coating is plasma sprayed onto a smooth surface of a metal alloy substitute or on a bond coating. An initial thin ceramic layer is low pressure sprayed onto the smooth surface of the substrate or bond coating. Another ceramic layer is atmospheric plasma sprayed onto the initial ceramic layer.

  12. Deep SiO2 etching with Al and AlN masks for MEMS devices

    NASA Astrophysics Data System (ADS)

    Bliznetsov, Vladimir; Mao Lin, Hua; Zhang, Yue Jia; Johnson, David

    2015-08-01

    Silicon oxide-based materials such as quartz and silica are widely used in microelectromechanical systems (MEMS). One way to enhance the capability of their deep plasma etching is to increase selectivity by the use of hard masks. Although this approach was studied previously, information on the use of hard masks for the etching of silicon-oxide based materials on 200 mm substrates is scarce. We present the results of etching process development for amorphous silicon oxide using Al and AlN masks with a view of the application of the results for the etching of silica and quartz. Three gas chemistries (C4F8/O2, CF4 and SF6) and their mixtures were compared in an industrial reactive ion etch (RIE) chamber with two plasma sources. It was established that pure SF6 is the best etchant and AlN is a better mask than Al for providing higher selectivity and a sidewall angle close to vertical. A range of etching parameters for micromasking-free etching was established and etched structures of up to a 4 : 1 aspect ratio were created in 21 μm-thick oxide using the process with an etch rate of 0.32-0.36 μm min-1 and a selectivity to AlN mask of (38-49) : 1.

  13. Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material

    NASA Astrophysics Data System (ADS)

    Nilsson, D.; Janzén, E.; Kakanakova-Georgieva, A.

    2016-05-01

    Homoepitaxial layers of AlN and heteroepitaxial layers of AlN on 4H-SiC substrates were grown by metalorganic chemical vapor deposition at high temperatures up to 1400 °C, and with various thicknesses. From high resolution x-ray diffraction measurements of a set of homoepitaxial layers of high structural quality, the following mean value of the lattice constants was determined: a  =  3.111 31  ±  0.000 16 Å, and c  =  4.980 79  ±  0.000 11 Å. The structural quality of the heteroepitaxial layers was demonstrated, for example, by extracting the full width at a half maximum of the (0002) and (10–12) rocking curves of 25 arcsec and 372 arcsec, respectively, associated with a crack-free heteroepitaxial layer with a thickness of 1.3 μm grown at 1240 °C. From measuring a set of AlN heteroepitaxial layers, the following value of the biaxial strain relaxation coefficient was determined: R B  =  ‑0.556.

  14. CVD of SiC and AlN using cyclic organometallic precursors

    NASA Technical Reports Server (NTRS)

    Interrante, L. V.; Larkin, D. J.; Amato, C.

    1992-01-01

    The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

  15. Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

    SciTech Connect

    Altuntas, Halit E-mail: biyikli@unam.bilkent.edu.tr; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi E-mail: biyikli@unam.bilkent.edu.tr

    2015-04-21

    Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200 °C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2–21.5 MV/m), Schottky emission (23.6–39.5 MV/m), Frenkel-Poole emission (63.8–211.8 MV/m), trap-assisted tunneling (226–280 MV/m), and Fowler-Nordheim tunneling (290–447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.

  16. Properties of surface and interface structure of AlN/3C-SiC/Ge/Si (1 1 1) heterostructure

    NASA Astrophysics Data System (ADS)

    Nader, R.; Kazan, M.; Zgheib, Ch.; Pezoldt, J.; Masri, P.

    2009-12-01

    AlN thin films were grown at a temperature of 720 °C on (1 1 1) silicon carbide buffer layer deposited in turn on (1 1 1) silicon substrate by introducing Ge at the SiC/Si interface. The growth method used is the solid source molecular beam epitaxy (SSMBE). The morphological and structural properties of the AlN epilayers before and after Ge deposition were studied by atomic force microscopy and X-ray diffraction. It is found that the formation of oriented grain becomes more favorable by increasing Ge quantity at the interface. The surface roughness (RMS) values of the AlN thin films decreases as Ge amount increases at the substrate surface. XRD studies show that wurtzite-type AlN structure with (0 0 0 2) orientation becomes favorable with increase in Ge amount and the full width at half maximum of AlN (0 0 0 2) rocking curve reaches its minimum with 1 ML of Ge concentration.

  17. Experimental verification of the method for producing a three-dimensional cross-pairs metamaterial structure based on a dielectric AlN cube

    NASA Astrophysics Data System (ADS)

    Kozioł, P. E.; Górski, P. A.; Byndas, A.; Antończak, A. J.; Stępak, B. D.; Abramski, K. M.

    2016-02-01

    This paper presents a method of manufacturing 3D metamaterial structures using laser radiation. Our proposed material, aluminum nitride (AlN), by interaction of a high-energy laser beam undergoes a direct metallization process, a result of which a conductive aluminum layer is formed on the ceramic surface at the spot of the laser radiation. Using this unique feature on all six sides of an AlN ceramic cube, the designed cross-pairs were mapped. Unit cells were exposed to an electromagnetic wave, by which the occurrence of the resonant areas of reflectance and transmittance for 7.27 GHz and 9.14 GHz was observed. To demonstrate the property of the negative refractive index a prism made out of manufactured cubes was created. For a wave propagating through a wedge-shaped prism for certain frequency bands, a negative refraction angle was observed.

  18. Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

    NASA Astrophysics Data System (ADS)

    Chiu, C. H.; Lin, Y. W.; Tsai, M. T.; Lin, B. C.; Li, Z. Y.; Tu, P. M.; Huang, S. C.; Hsu, Earl; Uen, W. Y.; Lee, W. I.; Kuo, H. C.

    2015-03-01

    In this work, the ultraviolet light-emitting diodes (UV-LEDs) at 380 nm were grown on patterned sapphire substrate (PSS) by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A sputtered AlN nucleation layer was utilized on the PSS to enhance the quality of the epitaxial layer. By using high-resolution X-ray diffraction, the full-width at half-maximum of the rocking curve shows that the UV-LEDs with sputtered AlN nucleation layer had better crystalline quality when compared to conventional GaN nucleation samples. From the scanning electron microscope (SEM) and transmission electron microscopy (TEM) images, it can be observed that the tip and sidewall portion of the pattern was smooth using the sputtered AlN nucleation layer. The threading dislocation densities (TDDs) are reduced from 6×107 cm-2 to 2.5×107 cm-2 at the interface between the u-GaN layers for conventional and AlN PSS devices, respectively. As a result, a much higher light output power was achieved. The light output power at an injection current of 20 mA was enhanced by 30%. Further photoluminescence (PL) measurement and numerical simulation confirm that this increase of output power can be attributed to the improvement of material quality and light extraction.

  19. Strain isolated ceramic coatings

    NASA Technical Reports Server (NTRS)

    Tolokan, R. P.; Brady, J. B.; Jarrabet, G. P.

    1985-01-01

    Plasma sprayed ceramic coatings are used in gas turbine engines to improve component temperature capability and cooling air efficiency. A compliant metal fiber strain isolator between a plasma sprayed ceramic coating and a metal substrate improves ceramic durability while allowing thicker coatings for better insulation. Development of strain isolated coatings has concentrated on design and fabrication of coatings and coating evaluation via thermal shock testing. In thermal shock testing, five types of failure are possible: buckling failure im compression on heat up, bimetal type failure, isothermal expansion mismatch failure, mudflat cracking during cool down, and long term fatigue. A primary failure mode for thermally cycled coatings is designated bimetal type failure. Bimetal failure is tensile failure in the ceramic near the ceramic-metal interface. One of the significant benefits of the strain isolator is an insulating layer protecting the metal substrate from heat deformation and thereby preventing bimetal type failure.

  20. In vitro hemocompatibility on thin ceramic and hydrogel films deposited on polymer substrate performed in arterial flow conditions.

    PubMed

    Major, Roman; Trembecka-Wójciga, Klaudia; Kot, Marcin; Lackner, Juergen M; Wilczek, Piotr; Major, Boguslaw

    2016-04-01

    Hydrogel coatings were stabilized by titanium carbonitride a-C:H:Ti:N buffer layers deposited directly onto the polyurethane (PU) substrate beneath a final hydrogel coating. Coatings of a-C:H:Ti:N were deposited using a hybrid method of pulsed laser deposition (PLD) and magnetron sputtering (MS) under high vacuum conditions. The influence of the buffer a-C:H:Ti:N layer on the hydrogel coating was analysed by means of a multi-scale microstructure study. Mechanical tests were performed at an indentation load of 5 mN using Berkovich indenter geometry. Haemocompatible analyses were performed in vitro using a blood flow simulator. The blood-material interaction was analysed under dynamic conditions. The coating fabrication procedure improved the coating stability due to the deposition of the amorphous titanium carbonitride buffer layer. PMID:26838818

  1. Multiwalled carbon nanotubes-ceramic electrode modified with substrate-selective imprinted polymer for ultra-trace detection of bovine serum albumin.

    PubMed

    Prasad, Bhim Bali; Prasad, Amrita; Tiwari, Mahavir Prasad

    2013-01-15

    This study describes the synthesis of a new class of substrate-selective molecularly imprinted polymer. This involved tetraethylene glycol 3-morpholin propionate acrylate (functional monomer) and bovine serum albumin (template) for polymerization in aqueous condition, using "surface grafting-from" approach directly on a vinyl exposed multiwalled carbon nanotubes-ceramic electrode. The analyte recapture at pH 6.8 in aqueous environment simultaneously involved hydrophobically driven hydrogen bonds and ionic interactions between negatively charged bovine serum albumin and positively charged imprinted nanofilm. The selectively encapsulated bovine serum albumin first gets reduced at -0.9V and then oxidized within the cavity, without getting stripped off, to respond a differential pulse voltammetry signal. The limit of detection [0.42ng mL(-1) (3σ, RSD≤1.02%)] obtained was free from any cross-reactivity and matrix complications in aqueous, pharmaceutical, serum, and liquid milk samples. The proposed sensor can be used as a practical sensor for ultra-trace analysis of bovine serum albumin in clinical settings. PMID:22938840

  2. Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

    SciTech Connect

    Ganz, P. R.; Schaadt, D. M.

    2011-12-23

    Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

  3. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    SciTech Connect

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-02-23

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  4. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    NASA Astrophysics Data System (ADS)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-02-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50-200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10-50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  5. Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

    SciTech Connect

    Benaissa, M.; Vennegues, P.; Tottereau, O.; Nguyen, L.; Semond, F.

    2006-12-04

    The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots.

  6. c-axis orientation and piezoelectric coefficients of AlN thin films sputter-deposited on titanium bottom electrodes

    NASA Astrophysics Data System (ADS)

    Ababneh, A.; Alsumady, M.; Seidel, H.; Manzaneque, T.; Hernando-García, J.; Sánchez-Rojas, J. L.; Bittner, A.; Schmid, U.

    2012-10-01

    Aluminum nitride (AlN) reactively sputter deposited from an aluminum target is an interesting compound material due to its CMOS compatible fabrication process and its piezoelectric properties. To obtain high piezoelectric coefficients it is a necessary pre-request to synthesize films with c-axis orientation. Besides the influence of sputter conditions on the microstructure of AlN thin films the condition of the substrate surface is another important factor of utmost importance. In this study, the influence of 350 nm thick titanium metallization DC sputter-deposited on SiO2/Si substrates at varying back pressure levels bp,Ti in the range of 2 × 10-3 to 14 × 10-3 mbar on the c-axis orientation and the piezoelectric coefficients of 600 nm thick AlN thin films is investigated. Besides the plasma power for Ti deposition (Pp,Ti = 100 W) the parameters for AlN synthetization are fixed to Pp = 1000 W and bp,AlN = 4 × 10-3 mbar in 100% N2 atmosphere. Basically, the surface roughness of the Ti bottom layer is the dominating factor resulting either in a high degree of c-axis orientation (i.e. at low bp,Ti values) or in an amorphous AlN microstructure (i.e. at high bp,Ti values). Under low pressure conditions, a smooth and dense surface characteristics is achieved due to a higher kinetic energy associated with the adatoms what is especially important at nominally unheated substrate conditions. The piezoelectric coefficient d33 decreases from 2.55 to 1.7 pm -1 when increasing the titanium sputter pressure from 2 × 10-3 to 14 × 10-3 mbar. When decreasing the Ti film thickness to 60 nm and hence, reducing the root mean square roughness by a factor of about 2, the intensity associated with the AlN (0 0 2) peak is increased by a factor of about 1.7 demonstrating the direct impact. Furthermore, the highest values for d33 and d31 (i.e. 3.15 pm V-1 and -1.28 pm V-1) are determined.

  7. Fabrication of translucent boron nitride dispersed polycrystalline silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Joshi, B.; Fu, Z.; Niihara, K.; Lee, S. W.

    2011-03-01

    Optical transparency was achieved at infrared region and overall translucent silicon nitride was fabricated using hot press sintering (HPS). The increase in h-BN content decreased the optical transparency. Microstructral observations shows that the optical, mechanical and tribological properties of BN dispersed polycrystalline Si3N4 ceramics were affected by the density, α:β-phase ratio and content of h-BN in sintered ceramics. The hot pressed samples were prepared from the mixture of α-Si3N4, AlN, MgO and h-BN at 1850°C. The composite contained from 0.25 to 2 mass % BN powder with sintering aids (9% AlN + 3% MgO). Maximum transmittance of 57% was achieved for 0.25 mass % BN doped Si3N4 ceramics. Fracture toughness was increased and wear volume and friction coefficient were decreased with increase in BN content.

  8. Mechanism for persistent hexagonal island formation in AlN buffer layer during growth on Si (111) by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Hsu, K.-Y.; Chung, H.-C.; Liu, C.-P.; Tu, L.-W.

    2007-05-21

    The characteristics of structure and morphology of AlN grown by a growth interruption method on Si (111) with plasma-assisted molecular beam epitaxy are investigated. It is found that the growth interruption method would improve the surface flatness of the AlN layer without the formation of Al droplets. However, AlN hexagonal islands were present and persistent throughout the entire growth owing to effective strain relaxation and Eherlich-Schowebel barrier effect of preexistent surface islands grown on higher terraces of the Si substrate. The density of threading dislocations underneath the hexagonal islands is much less than elsewhere in the film, which is presumably due to dislocation annihilation during the island growth process.

  9. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ∼5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density–voltage and frequency dependent (7 kHz–5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole–Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  10. Microstructure and dielectric properties of (Ba 0.6Sr 0.4)TiO 3 thin films grown on super smooth glazed-Al 2O 3 ceramics substrate

    NASA Astrophysics Data System (ADS)

    Chen, Hongwei; Yang, Chuanren; Zheng, Shanxue; Zhang, Jihua; Zhang, Qiaozhen; Lei, Guanhuan; Lou, Feizhi; Yang, Lijun

    2011-12-01

    Modified substrates with nanometer scale smooth surface were obtained via coating a layer of CaO-Al2O3-SiO2 (CaAlSi) high temperature glaze with proper additives on the rough-95% Al2O3 ceramics substrates. (Ba0.6Sr0.4)TiO3 (BST) thin films were deposited on modified Al2O3 substrates by radio-frequency magnetron sputtering. The microstructure, dielectric, and insulating properties of BST thin films grown on glazed-Al2O3 substrates were investigated by X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric properties measurement. These results showed that microstructure and dielectric properties of BST thin films grown on glazed-Al2O3 substrates were almost consistent with that of BST thin films grown on LaAlO3 (1 0 0) single-crystal substrates. Thus, the expensive single-crystal substrates may be substituted by extremely cheap glazed-Al2O3 substrates.

  11. High output power AlN vibration-driven energy harvesters

    NASA Astrophysics Data System (ADS)

    Cao, Z.; He, J.; Wang, Q.; Hara, M.; Oguchi, H.; Kuwano, H.

    2013-12-01

    This paper presents miniature AlN harvesters for harvesting low-frequency and two-dimensional vibration energy. A high fracture toughness and high yield strength stainless steel substrate was used to enhance output power and reduce resonate frequency of vibration energy harvesters. The thickness of 1.89 μm AlN films were deposited on 50 μm thick stainless steel (SUS) substrates for fabricating the harvesters. The Al/AlN/SUS multi-layer sheet was made into long and thin plate-like cantilevers with heavy proof masses attached at their free ends. The devices can collect vibration energy efficiently not only under perpendicular direction to the plate surface of cantilevers but also under the parallel direction. When vibration acceleration was 1.0 g, output power was 28.114 μW for perpendicular vibration and 51.735 μW for parallel vibration. When the acceleration of parallel vibration was 1.6 g, output power was 89.339 μW.

  12. Growth and Characterization of Polyimide-Supported AlN Films for Flexible Surface Acoustic Wave Devices

    NASA Astrophysics Data System (ADS)

    Li, Qi; Liu, Hongyan; Li, Gen; Zeng, Fei; Pan, Feng; Luo, Jingting; Qian, Lirong

    2016-06-01

    Highly c-axis oriented aluminum nitride (AlN) films, which can be used in flexible surface acoustic wave (SAW) devices, were successfully deposited on polyimide (PI) substrates by direct current reactive magnetron sputtering without heating. The sputtering power, film thickness, and deposition pressure were optimized. The characterization studies show that at the optimized conditions, the deposited AlN films are composed of columnar grains, which penetrate through the entire film thickness (~2 μm) and exhibit an excellent (0002) texture with a full width at half maximum value of the rocking curve equal to 2.96°. The film surface is smooth with a root mean square value of roughness of 3.79 nm. SAW prototype devices with a center frequency of about 520 MHz and a phase velocity of Rayleigh wave of about 4160 m/s were successfully fabricated using the AlN/PI composite structure. The obtained results demonstrate that the highly c-axis oriented AlN films with a smooth surface and low stress can be produced on relatively rough, flexible substrates, and this composite structure can be possibly used in flexible SAW devices.

  13. Temperature-dependent microstructural evolution of Ti2AlN thin films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, Zheng; Jin, Hongmei; Chai, Jianwei; Pan, Jisheng; Seng, Hwee Leng; Goh, Glen Tai Wei; Wong, Lai Mun; Sullivan, Michael B.; Wang, Shi Jie

    2016-04-01

    Ti2AlN MAX-phase thin films have been deposited on MgO (1 1 1) substrates between 500 and 750 °C using DC reactive magnetron sputtering of a Ti2Al compound target in a mixed N2/Ar plasma. The composition, crystallinity, morphology and hardness of the thin films have been characterized by X-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and nano-indentation, respectively. The film initially forms a mixture of Ti, Al and (Ti,Al)N cubic solid solution at 500 °C and nucleates into polycrystalline Ti2AlN MAX phases at 600 °C. Its crystallinity is further improved with an increase in the substrate temperature. At 750 °C, a single-crystalline Ti2AlN (0 0 0 2) thin film is formed having characteristic layered hexagonal surface morphology, high hardness, high Young's modulus and low electrical resistivity. The mechanism behind the evolution of the microstructure with growth temperature is discussed in terms of surface energies, lattice mismatch and enhanced adatom diffusion at high growth temperatures.

  14. Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.

    PubMed

    Laksana, Chipta; Chen, Meei-Ru; Liang, Yen; Tzou, An-Jyeg; Kao, Hui-Ling; Jeng, Erik; Chen, Jyh; Chen, Hou-Guang; Jian, Sheng-Rui

    2011-08-01

    High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators. PMID:21859589

  15. Shock compression profiles in ceramics

    SciTech Connect

    Grady, D.E.; Moody, R.L.

    1996-03-01

    An investigation of the shock compression properties of high-strength ceramics has been performed using controlled planar impact techniques. In a typical experimental configuration, a ceramic target disc is held stationary, and it is struck by plates of either a similar ceramic or by plates of a well-characterized metal. All tests were performed using either a single-stage propellant gun or a two-stage light-gas gun. Particle velocity histories were measured with laser velocity interferometry (VISAR) at the interface between the back of the target ceramic and a calibrated VISAR window material. Peak impact stresses achieved in these experiments range from about 3 to 70 GPa. Ceramics tested under shock impact loading include: Al{sub 2}O{sub 3}, AlN, B{sub 4}C, SiC, Si{sub 3}N{sub 4}, TiB{sub 2}, WC and ZrO{sub 2}. This report compiles the VISAR wave profiles and experimental impact parameters within a database-useful for response model development, computational model validation studies, and independent assessment of the physics of dynamic deformation on high-strength, brittle solids.

  16. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  17. The mechanical and tribological properties of UHMWPE loaded ALN after mechanical activation for joint replacements.

    PubMed

    Gong, Kemeng; Qu, Shuxin; Liu, Yumei; Wang, Jing; Zhang, Yongchao; Jiang, Chongxi; Shen, Ru

    2016-08-01

    Ultra-high molecular weight polyethylene (UHMWPE) loaded with alendronate sodium (ALN) has tremendous potential as an orthopeadic biomaterial for joint replacements. However, poor mechanical and tribological properties of UHMWPE-ALN are still obstacle for further application. The purpose of this study was to investigate the effect and mechanism of mechanical activation on mechanical and tribological properties of 1wt% ALN-loaded UHMWPE (UHMWPE-ALN-ma). In this study, tensile test, small punch test and reciprocating sliding wear test were applied to characterize the mechanical and tribological properties of UHMWPE-ALN-ma. Scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) were employed to characterize UHMWPE-ALN-ma. Tensile test and small punch test showed that Young׳s modulus, tensile strength and work-to-failure (WTF) of UHMWPE-ALN-ma increased significantly compared to those of UHMWPE-ALN. The friction coefficients and wear factors of UHMWPE-ALN-ma both decreased significantly compared to those of UHMWPE-ALN. Mechanical activation obviously reduced type 1 (void) and type 2 (the disconnected and dislocated machining marks) fusion defects of UHMWPE-ALN-ma, which were revealed by SEM images of freeze fracture surfaces after etching and lateral surfaces of specimens after extension to fracture, respectively. It was attributed to peeled-off layers and chain scission of molecular chains of UHMWPE particles after mechanical activation, which were revealed by SEM images and FTIR spectra of UHMWPE-ALN-ma and UHMWPE-ALN, respectively. Moreover, EDS spectra revealed the more homogeneous distribution of ALN in UHMWPE-ALN-ma compared to that of UHMWPE-ALN. The present results showed that mechanical activation was a potential strategy to improve mechanical and tribological properties of UHMWPE-ALN-ma as an orthopeadic biomaterial for joint replacements. PMID:27104932

  18. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  19. Portfolio: Ceramics.

    ERIC Educational Resources Information Center

    Hardy, Jane; And Others

    1982-01-01

    Describes eight art activities using ceramics. Elementary students created ceramic tiles to depict ancient Egyptian and medieval European art, made ceramic cookie stamps, traced bisque plates on sketch paper, constructed clay room-tableaus, and designed clay relief masks. Secondary students pit-fired ceramic pots and designed ceramic Victorian…

  20. Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films

    NASA Astrophysics Data System (ADS)

    Alizadeh, M.; Mehdipour, H.; Ganesh, V.; Ameera, A. N.; Goh, B. T.; Shuhaimi, A.; Rahman, S. A.

    2014-12-01

    c-Axis-oriented aluminum nitride (AlN) thin film with improved quality was deposited on Si(111) substrate using ZnO buffer layer by plasma-assisted hot filament chemical vapor deposition. The optical and electrical properties and surface morphology as well as elemental composition of the AlN films deposited with and without ZnO buffer layer were investigated using a host of measurement techniques: X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, field emission scanning electron microscopy (FESEM), and current-voltage (I-V) characteristic measurement. The XRD and XPS results reveal that the AlN/ZnO/Si films are free of metallic Al particles. Also, cross-sectional FESEM observations suggest formation of a well-aligned, uniform, continuous, and highly (002) oriented structure for a bi-layered AlN film when Si(111) is covered with ZnO buffer. Moreover, a decrease in full width at half maximum of the E2 (high)-mode peak in Raman spectrum indicates a better crystallinity for the AlN films formed on ZnO/Si substrate. Finally, I-V curves obtained indicate that the electrical behavior of the AlN thin films switches from conductive to insulative when film is grown on a ZnO-buffered Si substrate.

  1. AlN thin films prepared by DC arc deposition

    NASA Astrophysics Data System (ADS)

    Liang, Hai-feng; Yan, Yi-xin; Miao, Shu-fan

    2006-02-01

    Many researchers are interested in AlN films because of their novel thermal, chemical, mechanical, acoustic, and optical properties. Many methodsincluding such as DC/RF sputtering, chemical vapor deposition (CVD), laser chemical vapor deposition(LCVD), molecular beam epitaxy (MBE), thermal vapor deposition, can be used to prepare AlN films. In this paper, a new method, DC arc deposition, is used to deposite AlN films. It is an anti-reflective, protective film on optical elements. FTIR are used to determine the ALN structure and measure the transmittance spectrum. Ellipsometry is used to determine the films' refractive index, extinction index and thickness. The films' anti-wear properties are tested by pin-on-disc way and the anti-corrosion(anti-acid, anti-alkali, anti-salt) properties are also tested. The results show that the films is AlN films by the 670cm -1 typical peak, the films' extinction index is near to zero in the range of visible and infrared waveband, the films' refractive index is varied from 1.7 to 2.1 at range of visible and infrared waveband. The films have better anti-wear, anti-acid and anti-alkali properties, but their anti-salt properties are not good.

  2. Growth dynamics of reactive-sputtering-deposited AlN films

    SciTech Connect

    Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

    2005-06-15

    We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent {beta}=0.37{+-}0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent {alpha}=1.2{+-}0.2 and {beta}=0.37{+-}0.03 and coarsening exponent 1/z=0.32{+-}0.05; (ii) local exponents: {alpha}{sub loc}=1, {beta}{sub loc}=0.32{+-}0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively.

  3. Defects in AlN as candidates for solid-state qubits

    NASA Astrophysics Data System (ADS)

    Varley, J. B.; Janotti, A.; Van de Walle, C. G.

    2016-04-01

    We investigate point defects and defect complexes in AlN for potential applicability as single-spin centers and solid-state qubits analogous to those observed in diamond and SiC. We find that isolated anion vacancies (VN) meet many of the criteria for an individually addressable quantum system, but their states are too close to the conduction-band edge. We therefore investigate how the properties can be tuned by complexing of the vacancy with substitutional impurities on neighboring lattice sites. Based on our comprehensive investigation, the transition-metal dopants Ti and Zr emerge as the best candidates: They favorably substitute on the Al site and form complexes with VN that possess the desired array of electronic and optical properties. Favorable charge and spin states, binding energies, and optical excitation energies are reported. Our results indicate that implantation of Ti or Zr into single-crystal AlN substrates can lead to the formation of individually addressable solid-state qubits in this material.

  4. Catalytic effect of Al and AlN interlayer on the growth and properties of containing carbon films

    NASA Astrophysics Data System (ADS)

    Zhou, Bing; Liu, Zhubo; Tang, Bin; Rogachev, A. V.

    2015-01-01

    Diamond-like carbon (DLC) and carbon nitride (CNx) bilayer films with Al and AlN interlayer were fabricated by pulse cathode arc technique. The structure, composition, morphology and mechanical properties of the films were investigated by Raman, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Knoop sclerometer and surface profilometer. The results indicated that the complete diffusion between C and Al atoms occurs in the Al/DLC and Al/CNx bilayer. Al interlayer induces the increase of the size and ordering of Csp2 clusters in the films but AlN interlayer increases the disordering degree of Csp2 clusters. XPS results showed that a higher content of Csp3/Csp2 bonds presents in the Al/CNx bilayer, and Al and AlN interlayer decreases the atomic ratio of N/C. AFM with phase contrast mode illustrated the morphologic characteristics of the bilayer films. All the bilayers show a nano-structural surface. The morphology changes of the bilayer were well explained by the surface state of the substrate and the growth mechanism of DLC films. The hardness of Al/DLC bilayer decreases but it increases for the other bilayers compared to the corresponding DLC (CNx) monolayer. The internal stress of the bilayer is significantly lower than that of the monolayer except for the AlN/CNx bilayer. These studies could make the difference at the time of choosing a suitable functional film for certain application.

  5. Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

    NASA Astrophysics Data System (ADS)

    Liang, F.; Chen, P.; Zhao, D. G.; Jiang, D. S.; Zhao, Z. J.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Li, X.; Liu, S. T.; Yang, H.; Liu, J. P.; Zhang, L. Q.; Zhang, Y. T.; Du, G. T.

    2016-09-01

    Photoelectron spectroscopy has been employed to analyze the content and chemical states of the elements on the surface of AlN films with different thickness, which are synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates under low pressure. It is found that, besides the carbon and gallium on the AlN surface, the atom percentage of surface oxygen increases from 4.9 to 8.4, and the electron affinity also increases from 0.36 to 0.97 eV, when the thickness of AlN films increase from 50 to 400 nm. Furthermore, accompanying with the high-resolution XPS spectra of the O 1s, it is speculated that surface oxygen may be the major influence on the electron affinity, where the surface oxygen changes the surface chemical states through replacing N to form Al-O bond and Ga-O bond, although there are also a few of Ga and C contaminations in the chemical sate of Ga-O and C-C, respectively.

  6. Inversion domains in AlN grown on (0001) sapphire

    SciTech Connect

    Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S.; Weyburne, D.W.

    2003-08-25

    Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

  7. Compliant sleeve for ceramic turbine blades

    DOEpatents

    Cai, Hongda; Narasimhan, Dave; Strangman, Thomas E.; Easley, Michael L.; Schenk, Bjoern

    2000-01-01

    A compliant sleeve for attaching a ceramic member to a metal member is comprised of a superalloy substrate having a metal contacting side and a ceramic contacting side. The ceramic contacting side is plated with a layer of nickel followed by a layer of platinum. The substrate is then oxidized to form nickel oxide scale on the ceramic contacting side and a cobalt oxide scale on the metal contacting side. A lubricious coating of boron nitride is then applied over the metal contacting side, and a shear-stress limiting gold coating is applied over the ceramic contacting side.

  8. High temperature ceramic articles having corrosion resistant coating

    DOEpatents

    Stinton, D.P.; Lee, W.Y.

    1997-09-30

    A ceramic article is disclosed which includes a porous body of SiC fibers, Si{sub 3}N{sub 4} fibers, SiC coated fibers or Si{sub 3}N{sub 4} coated fibers, having at least one surface, the article having a coating of AlN adherently disposed throughout at least a portion of the porous body. 1 fig.

  9. Refractory Oxidative-Resistant Ceramic Carbon Insulation

    NASA Technical Reports Server (NTRS)

    Leiser, Daniel B. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    2001-01-01

    High-temperature, lightweight, ceramic carbon insulation is prepared by coating or impregnating a porous carbon substrate with a siloxane gel derived from the reaction of an organodialkoxy silane and an organotrialkoxy silane in an acid or base medium in the presence of the carbon substrate. The siloxane gel is subsequently dried on the carbon substrate to form a ceramic carbon precursor. The carbon precursor is pyrolyzed, in an inert atmosphere, to form the ceramic insulation containing carbon, silicon, and oxygen. The carbon insulation is characterized as a porous, fibrous, carbon ceramic tile which is particularly useful as lightweight tiles for spacecraft.

  10. Electronic structures, elastic properties, and minimum thermal conductivities of cermet M3AlN

    NASA Astrophysics Data System (ADS)

    Wang, Jin; Chen, ZhiQian; Li, ChunMei; Li, Feng; Nie, ChaoYin

    2014-08-01

    The electronic structures and elastic anisotropies of cubic Ti3AlN, Zr3AlN, and Hf3AlN are investigated by pseudopotential plane-wave method based on density functional theory. At the Fermi level, the electronic structures of these compounds are successive with no energy gap between conduct and valence bands, and exhibit metallicity in ground states. In valence band of each partial density of states, the different orbital electrons indicate interaction of corresponding atoms. In addition, the anisotropy of Hf3AlN is found to be significantly different from that of Ti3AlN and Zr3AlN, which involve the differences in the bonding strength. It is notable that Hf3AlN is a desired thermal barrier material with the lowest thermal conductivity at high temperature among the three compounds. Young's moduli of anti-perovskite Ti3AlN, Zr3AlN, and Hf3AlN in full space. Electron density differences on crystal planes (1 0 0), (2 0 0), and (1 1 0) of anti-perovskite Zr3AlN. ="fx1"/>

  11. Investigation of the novel attributes of a double-gate graphene nanoribbon FET with AlN high-κ dielectrics

    NASA Astrophysics Data System (ADS)

    Owlia, Hadi; Keshavarzi, Parviz

    2014-11-01

    The use of high-κ dielectrics is an inevitable requirement to continue the historical performance scaling trend. Recently, the electrical transport characteristics of graphene FET on an aluminum nitride (AlN) substrate in spite of other common dielectric materials indicate significant improvement of carrier mobility. This paper proposes a novel double-gate graphene nanoribbon field-effect transistor (GNRFET) on AlN dielectric substrates. More studies exploring device characteristics are included to assess the performance over the conventional SiO2-based one. It is found that the high-κ GNRFET affords larger on current, on-off ratio, transconductance and intrinsic gain. The high-κ structure also provides further immunity against short-channel effects including drain-induced barrier-lowering and subthreshold swing.

  12. Texture development in SiC-seeded AlN

    SciTech Connect

    Sandlin, M.S.; Bowman, K.J.; Root, J.

    1997-01-01

    Polycrystalline AlN specimens containing 15 volume percent SiC seed particles were slip-cast then hot-pressed at 1,800 C. These processing steps resulted in oriented SiC platelets in a nearly random AlN matrix. Samples were then annealed for up to 18 hours at 2,150 C under nitrogen. Quantitative texture measurements of the AlN and SiC basal poles, and powder diffraction measurements were performed using neutron and X-ray diffraction. The results indicate that SiC platelets effectively seed AlN-SiC alloy textures by a coalescence and growth mechanism during annealing. Texture intensification does not occur in AlN specimens without SiC platelet additions, or in specimens containing non-oriented SiC powder. The most effective seeing was observed in specimens containing 15 volume percent SiC platelets. Optical microscopy and electron microscopy were used in conjunction with texture analysis to elucidate texture development mechanisms.

  13. Recovery behavior of neutron-induced damage of AlN irradiated at higher temperatures by thermal annealing

    NASA Astrophysics Data System (ADS)

    Yano, Toyohiko; Futamura, Yuusuke; Imai, Masamitsu; Yoshida, Katsumi

    2013-09-01

    Aluminum nitride (AlN) is a candidate ceramic for electric or MHD insulator materials of liquid Pb cooled system of fusion reactors since it shows high electrical resistivity, high thermal conductivity, high strength and good compatibility with Pb alloys. In this study, recovery behavior of macroscopic length and lattice parameter of neutron-irradiated AlN was observed. Polycrystalline AlN specimens were neutron-irradiated in the Japan Materials Testing Reactor at the following conditions. (1) 4.4 × 1024 n/m2 (E > 0.1 MeV) at 1193-1223 K (920-950 °C), (2) 8.8 × 1024 n/m2 at 1273 K (1000 °C) and (3) 2.8 × 1024 n/m2 at 573 K (300 °C). In the case of specimen irradiated to 2.8 × 1024 n/m2 at 573 K, macroscopic length slightly shrunk up to 1273 K, whereas the other specimens showed slight increase in length up to 1273 K. Rapid recovery of the macroscopic length was observed beyond ˜1273 K in all the specimens. Furthermore, beyond 1673 K, small increase in length was observed for the specimens irradiated to 4.4 × 1024 and 8.8 × 1024 n/m2, which should be caused by He bubble swelling. The lattice parameter of the specimens showed anisotropic swelling, i.e., expansion of the c-axis was significantly greater than that of the a-axis due to the irradiation in all the specimens. The recovery of the c-axis parameter was found to proceed above ˜1273 K, corresponding to the decrease in macroscopic length. The difference in macroscopic volume change and the unit-cell volume change can be attributed for the formation of microcrack along grain boundaries in the lower fluence specimen and possibly voids formation for the higher fluence specimens.

  14. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    SciTech Connect

    Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  15. Structural and optical characterization of low-temperature ALD crystalline AlN

    NASA Astrophysics Data System (ADS)

    Motamedi, P.; Cadien, K.

    2015-07-01

    A plasma enhanced atomic layer deposition (PEALD) process has been used to deposit crystalline AlN thin films at 250 °C using nitrogen 5% hydrogen plasma and trimethylaluminum precursors. Films grown on single crystal silicon and sapphire substrates are crystalline with strong (100) preferred orientation. Mass density measured by x-ray reflectivity (XRR) was 2.94 g cm-3, compared to 3.25 g cm-3 for the bulk materials. Photoelectron and infrared studies were used to investigate the elemental analysis and the exact bonding environment of the constituents. The optical band gap, measured using spectroscopic ellipsometry, is 6.04 eV, and the refractive index, measured at 632 nm wavelength, is 1.96. The optical properties were thickness-dependent below 30 nm for refractive index and below 15 nm for band gap.

  16. Direct cooled power electronics substrate

    DOEpatents

    Wiles, Randy H [Powell, TN; Wereszczak, Andrew A [Oak Ridge, TN; Ayers, Curtis W [Kingston, TN; Lowe, Kirk T [Knoxville, TN

    2010-09-14

    The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.

  17. Preparation of ceramic coating on Ti substrate by plasma electrolytic oxidation in different electrolytes and evaluation of its corrosion resistance: Part II

    NASA Astrophysics Data System (ADS)

    Shokouhfar, M.; Dehghanian, C.; Montazeri, M.; Baradaran, A.

    2012-01-01

    The aim of this work is to discuss the growth characteristics and corrosion behavior of the prepared ceramic coatings on titanium by plasma electrolytic oxidation (PEO) technique in different electrolytes. PEO process was carried out on titanium under constant voltage regime using a pulse power supply. Three kinds of electrolytes, phosphate, silicate and borate based solutions, were used to evaluate the influence of electrolyte composition on the structure, surface morphology, phase composition and corrosion behavior of prepared ceramic oxide films (titania). The phase composition of the coatings was investigated by X-ray diffraction. Scanning electron microscopy was employed to evaluate the growth and surface morphology of coatings. Elements of coatings were investigated with energy dispersive spectrometer. Corrosion behavior of the coatings was also examined by potentiodynamic polarization and electrochemical impedance spectroscopy. The spark voltage of oxide films had a significant effect on the surface morphology, size and homogeneity of micro-pores, thickness and corrosion properties of coatings.

  18. High-Temperature Dielectric Properties of Aluminum Nitride Ceramic for Wireless Passive Sensing Applications

    PubMed Central

    Liu, Jun; Yuan, Yukun; Ren, Zhong; Tan, Qiulin; Xiong, Jijun

    2015-01-01

    The accurate characterization of the temperature-dependent permittivity of aluminum nitride (AlN) ceramic is quite critical to the application of wireless passive sensors for harsh environments. Since the change of the temperature-dependent permittivity will vary the ceramic-based capacitance, which can be converted into the change of the resonant frequency, an LC resonator, based on AlN ceramic, is prepared by the thick film technology. The dielectric properties of AlN ceramic are measured by the wireless coupling method, and discussed within the temperature range of 12 °C (room temperature) to 600 °C. The results show that the extracted relative permittivity of ceramic at room temperature is 2.3% higher than the nominal value of 9, and increases from 9.21 to 10.79, and the quality factor Q is decreased from 29.77 at room temperature to 3.61 at 600 °C within the temperature range. PMID:26370999

  19. Dielectric properties of spark plasma sintered AlN/SiC composite ceramics

    NASA Astrophysics Data System (ADS)

    Gao, Peng; Jia, Cheng-chang; Cao, Wen-bin; Wang, Cong-cong; Liang, Dong; Xu, Guo-liang

    2014-06-01

    In this study, we have investigated how the dielectric loss tangent and permittivity of AlN ceramics are affected by factors such as powder mixing methods, milling time, sintering temperature, and the addition of a second conductive phase. All ceramic samples were prepared by spark plasma sintering (SPS) under a pressure of 30 MPa. AlN composite ceramics sintered with 30wt%-40wt% SiC at 1600°C for 5 min exhibited the best dielectric loss tangent, which is greater than 0.3. In addition to AlN and β-SiC, the samples also contained 2H-SiC and Fe5Si3, as detected by X-ray difraction (XRD). The relative densities of the sintered ceramics were higher than 93%. Experimental results indicate that nano-SiC has a strong capability of absorbing electromagnetic waves. The dielectric constant and dielectric loss of AlN-SiC ceramics with the same content of SiC decreased as the frequency of electromagnetic waves increased from 1 kHz to 1 MHz.

  20. On Ceramics.

    ERIC Educational Resources Information Center

    School Arts, 1982

    1982-01-01

    Presents four ceramics activities for secondary-level art classes. Included are directions for primitive kiln construction and glaze making. Two ceramics design activities are described in which students make bizarrely-shaped lidded jars, feet, and footwear. (AM)

  1. THE THICKNESS DEPENDENCE OF OXYGEN PERMEABILITY IN SOL-GEL DERIVED CGO-COFE2O4 THIN FILMS ON POROUS CERAMIC SUBSTRATES: A SPUTTERED BLOCKING LAYER FOR THICKNESS CONTROL

    SciTech Connect

    Brinkman, K

    2009-01-08

    Mixed conductive oxides are a topic of interest for applications in oxygen separation membranes as well as use in producing hydrogen fuel through the partial oxidation of methane. The oxygen flux through the membrane is governed both by the oxygen ionic conductivity as well as the material's electronic conductivity; composite membranes like Ce{sub 0.8}Gd{sub 0.2}O{sub 2-{delta}} (CGO)-CoFe{sub 2}O{sub 4} (CFO) use gadolinium doped ceria oxides as the ionic conducting material combined with cobalt iron spinel which serves as the electronic conductor. In this study we employ {approx} 50 nm sputtered CeO{sub 2} layers on the surface of porous CGO ceramic substrates which serve as solution 'blocking' layers during the thin film fabrication process facilitating the control of film thickness. Films with thickness of {approx} 2 and 4 microns were prepared by depositing 40 and 95 separate sol-gel layers respectively. Oxygen flux measurements indicated that the permeation increased with decreasing membrane thickness; thin film membrane with thickness on the micron level showed flux values an order of magnitude greater (0.03 {micro}mol/cm{sup 2} s) at 800 C as compared to 1mm thick bulk ceramic membranes (0.003 {micro}mol/cm{sup 2}).

  2. Structural Ceramics

    NASA Technical Reports Server (NTRS)

    1986-01-01

    This publication is a compilation of abstracts and slides of papers presented at the NASA Lewis Structural Ceramics Workshop. Collectively, these papers depict the scope of NASA Lewis' structural ceramics program. The technical areas include monolithic SiC and Si3N4 development, ceramic matrix composites, tribology, design methodology, nondestructive evaluation (NDE), fracture mechanics, and corrosion.

  3. Coating MCPs with AlN and GaN

    NASA Technical Reports Server (NTRS)

    Bensaoula, Abdelhakim; Starikov, David; Boney, Chris

    2006-01-01

    A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N

  4. Positron annihilation in AlN and GaN

    NASA Astrophysics Data System (ADS)

    Arutyunov, N. Yu.; Emtsev, V. V.; Mikhailin, A. V.; Davidov, V. Yu.

    2001-12-01

    The measurements of one-dimensional angular correlation of the annihilation radiation (1D-ACAR) have been carried out for AlN and GaN as well as for some related materials (Al, Ga, GaP, GaAs, GaSb) which have been used as samples of references the analysis of results. The numeral values of characteristic length of radius of spherical volume to be occupied by annihilating electron ( rs‧) have differed significantly from the corresponding values ( rs) calculated by the conventional independent-particle-model (IPM) for ideal Fermi-gas: rs‧ (AlN)≃1.28 rs, where rs (AlN)≃1.61 a.u., and rs‧ (GaN)≃1.66 rs, where rs (GaN)≃1.64 a.u. The electron-positron “ion radii” reconstructed by the high-momentum components (HMC) of 1D-ACAR for Al 3+, Ga 3+ cores as well as numeral rs‧ values provide some reasons to believe that Ga- and Al-vacancies and their impurity complexes are effective centers of the positron localization in AlN and GaN; it is assumed that these complexes include V Ga, V Al, and N atom (V Ga-N Ga in GaN and V Al-N Al in AlN) where the nitrogen atom is likely to be in the configuration of substitution (anti-site), N +Ga and N +Al, respectively.

  5. Ceramic nanostructures and methods of fabrication

    DOEpatents

    Ripley, Edward B.; Seals, Roland D.; Morrell, Jonathan S.

    2009-11-24

    Structures and methods for the fabrication of ceramic nanostructures. Structures include metal particles, preferably comprising copper, disposed on a ceramic substrate. The structures are heated, preferably in the presence of microwaves, to a temperature that softens the metal particles and preferably forms a pool of molten ceramic under the softened metal particle. A nano-generator is created wherein ceramic material diffuses through the molten particle and forms ceramic nanostructures on a polar site of the metal particle. The nanostructures may comprise silica, alumina, titania, or compounds or mixtures thereof.

  6. Berkovich Nanoindentation on AlN Thin Films

    PubMed Central

    2010-01-01

    Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm−3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices. PMID:20672096

  7. Growth of non-polar a-plane AlN on r-plane sapphire

    NASA Astrophysics Data System (ADS)

    Jo, Masafumi; Hirayama, Hideki

    2016-05-01

    Growth of non-polar AlN is crucial to the realization of polarization-free light-emitting diodes in deep UV range. The aim of this study was to investigate the growth condition for obtaining a flat a-plane AlN on r-plane sapphire. A thin AlN layer grown at lower temperature played an important role in protecting the sapphire surface. Both high temperature and low V/III ratio were necessary in terms of enhanced adatom diffusion, leading to the formation of a flat AlN buffer.

  8. Tunable electronic structures of p-type Mg doping in AlN nanosheet

    SciTech Connect

    Peng, Yuting; Xia, Congxin Zhang, Heng; Wang, Tianxing; Wei, Shuyi; Jia, Yu

    2014-07-28

    The p-type impurity properties are investigated in the Mg-doped AlN nanosheet by means of first-principles calculations. Numerical results show that the transition energy levels reduce monotonously with the increase in Mg doping concentration in the Mg-doped AlN nanosheet systems, and are lower than that of the Mg-doped bulk AlN case for the cases with larger doping concentration. Moreover, Mg substituting Al atom is energy favorably under N-rich growth experimental conditions. These results are new and interesting to further improve p-type doping efficiency in the AlN nanostructures.

  9. Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

    NASA Astrophysics Data System (ADS)

    Liang, F.; Chen, P.; Zhao, D. G.; Jiang, D. S.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Li, X.; Liu, S. T.; Yang, H.; Zhang, L. Q.; Liu, J. P.; Zhang, Y. T.; Du, G. T.

    2016-05-01

    A large field emission current density of 2.55 A/cm2 at 20.9 V and a low turn-on voltage of 7.28 V is obtained from the Si-doped 50 nm-thick AlN film, synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates, which is the best result reported for AlN film. Accompanying with atomic force surface micro-images, it is found that this current is achieved owing to a blunting process under a high voltage of 95 V, which can lead to a decrease of the root mean square roughness from 4.23 to 1.03 nm.

  10. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    SciTech Connect

    Aoki, Takeshi Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-15

    This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.