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Sample records for aluminium arsenides

  1. Gallium Arsenide Domino Circuit

    NASA Technical Reports Server (NTRS)

    Yang, Long; Long, Stephen I.

    1990-01-01

    Advantages include reduced power and high speed. Experimental gallium arsenide field-effect-transistor (FET) domino circuit replicated in large numbers for use in dynamic-logic systems. Name of circuit denotes mode of operation, which logic signals propagate from each stage to next when successive stages operated at slightly staggered clock cycles, in manner reminiscent of dominoes falling in a row. Building block of domino circuit includes input, inverter, and level-shifting substages. Combinational logic executed in input substage. During low half of clock cycle, result of logic operation transmitted to following stage.

  2. Aluminium plasmonics

    SciTech Connect

    Gerard, Davy; Gray, Stephen K.

    2014-12-15

    In this study, we present an overview of 'aluminium plasmonics', i.e. the study of both fundamental and practical aspects of surface plasmon excitations in aluminium structures, in particular thin films and metal nanoparticles. After a brief introduction noting both some recent and historical contributions to aluminium plasmonics, we discuss the optical properties of aluminium and aluminium nanostructures and highlight a few selected studies in a host of areas ranging from fluorescence to data storage.

  3. Metal Insulator Semiconductor Structures on Gallium Arsenide.

    NASA Astrophysics Data System (ADS)

    Connor, Sean Denis

    Available from UMI in association with The British Library. The compound semiconductor gallium arsenide and its associated aluminium alloys have been the subject of intensive research in recent years. These materials offer the advantage of high electron mobilities coupled with the ability to be 'barrier engineered' leading to high injection efficiencies in bipolar devices. From a technological viewpoint however these materials are difficult to work with and device realisation is a major problem. Both thermal and anodic oxidation of these materials fail to produce a dielectric of sufficient quality for device applications and as a result devices tend to be complex non planar, mesa structures. A technique is proposed whereby the electrical interface is separated from the dielectric by means of a thin layer of AlGaAs, carrier confinement in the active GaAs region being maintained by the potential barriers to holes and electrons formed by the GaAs-AlGaAs junction. The integrity of these barriers is maintained by the provision of a suitable 'capping' dielectric. The electrical characteristics of various dielectric systems on GaAs have been investigated by means of current -voltage, capacitance-voltage and electronic breakdown measurements. Transport mechanisms for leakage current through these systems are identified and the interface properties (viz Fermi level pinning etc.) assessed by means of a direct comparison between experimental capacitance-voltage curves and theoretical data obtained from classical theory. As a technique for producing a convenient, in house 'capping' dielectric with good electrical and mechanical properties, the plasma anodisation of deposited aluminium films has been investigated. The anodisation parameters have been optimised for oxidation of these films in a microwave sustained oxygen plasma to give alumina films of around 500 A. A qualitative model for the anodisation process, involving linear and parabolic growth kinetics is proposed and

  4. Far-Infrared and Optical Studies of Gallium Arsenide and Aluminum Gallium Arsenide Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Stanaway, Mark Brian

    Available from UMI in association with The British Library. Requires signed TDF. This thesis reports far-infrared (FIR) and photoluminescence studies, performed at low temperatures (4.2K) and at magnetic fields up to 25T, of selectively and inadvertently doped bulk and low dimensional gallium arsenide (GaAs) and aluminium gallium arsenide (AlGaAs) semiconductor structures grown by molecular beam epitaxy. High-resolution FIR magnetospectroscopy of ultra -high mobility n-GaAs reveals a variety of shallow donor intra-impurity transitions plus spin-split higher Landau level transitions in the photoconductive response. The first observation of polarons bound to D^ - ions in bulk n-GaAs is reported. The excited state spectrum of the confined silicon donor in GaAs/AlGaAs multi-quantum wells (MQWs) has been examined. Narrower linewidths and more higher excited state donor transitions are noted in the present photoconductive investigation compared with previous reports. The electron recombination dynamics has been examined in silicon-doped GaAs/AlGaAs MQWs and homogeneous and sheet -doped bulk n-GaAs samples using time-resolved FIR photoconductivity. The extrinsic response of doped MQW structures suggests a potential use as a fast, sensitive detectors of FIR. FIR transmission measurements are reported for GaAs/AlGaAs quantum wells (QWs) of various widths in magnetic fields of up to 20T, tilted away from the normal to the QW plane by angles up to theta = 50^circ. Deviation of the cyclotron resonance field from a costheta law are interpreted using theoretical models describing Landau level/electric subband coupling. The in-plane magnetic field and excitation power dependence of the photoluminescence intensity of a GaAs/AlGaAs QW spectral feature is interpreted in terms of charge transfer in the QW, using a coupled oscillator model, and the efficiency of nonradiative electronic traps. In-plane magnetic field studies of the photoluminescence from a superlattice structure

  5. Thermal oxidation of gallium arsenide

    SciTech Connect

    Monteiro, O.R.; Evans, J.W.

    1989-01-01

    Here we present some results of transmission electron microscopy and secondary ion mass spectroscopy of thermally oxidized gallium arsenide with different types of dopants. At temperatures below 400 /sup 0/C an amorphous oxide is formed. Oxidation at temperatures between 500 and 600 /sup 0/C initially produces an epitaxial film of ..gamma..-Ga/sub 2/O/sub 3/. As the reaction proceeds, this film becomes polycrystalline and then transforms to ..beta..-Ga/sub 2/O/sub 3/. This film contains small crystallites of As/sub 2/O/sub 5/ and As/sub 2/O/sub 3/ in the case of the chromium doped samples, whereas only the former was detected in the case of silicon and tellurium doped samples. Elemental arsenic was always found at the interface between the oxide and GaAs. Chromium doped gallium also exhibited a slower oxidation kinetics than the other materials.

  6. Development of gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    1973-01-01

    The potential of ion implantation as a means of developing gallium arsenide solar cells with high efficiency performance was investigated. Computer calculations on gallium arsenide cell characteristics are presented to show the effects of surface recombination, junction space-charge recombination, and built-in fields produced by nonuniform doping of the surface region. The fabrication technology is summarized. Electrical and optical measurements on samples of solar cells are included.

  7. Thin film gallium arsenide solar cell research. Third quarterly project report, September 1, 1980-November 30, 1980. [Antireflection coating

    SciTech Connect

    Chu, S. S.

    1980-12-01

    The major objective of this contract is to produce gallium arsenide solar cells of 10% conversion efficiency in films of less than 10 micrometers thick which have been deposited by chemical vapor deposition on graphite or tungsten coated graphite substrates. Major efforts during this quarter were directed to: (1) the optimization of the deposition of gallium arsenide films of 10 ..mu..m thickness or less on tungsten/graphic substrates, (2) the investigation of the effectiveness of various grain boundary passivation techniques, (3) the deposition of tantalum pentoxide by ion beam sputtering as an antireflection coating, (4) the deposition of gallium aluminium arsenide by the organometallic process, and (5) the fabrication and characterization of large area Schottky barrier type solar cells from gallium arsenide films of about 10 ..mu..m thickness. Various grain boundary passivation techniques, such as the anodic oxidation, thermal oxidation, and ruthenium treatment, have been investigated. The combination of thermal oxidation and ruthenium treatment has been used to fabricate Schottky barrier type solar cells. Large area MOS solar cells of 9 cm/sup 2/ area with AMl efficiency of 8.5% have been fabricated from ruthenium treated gallium arsenide films of 10 ..mu..m thickness. The construction of the apparatus for the deposition of gallium aluminum arsenide by the organometallic process has been completed. The deposition of good quality tantalum pentoxide film as an antireflection coating has been carried out by the ion beam sputtering technique. The short-circuit current density and AMl efficiency of the solar cells are increased by approximately 60%, with a slight increase in the open-circuit voltage. Details are presented. (WHK)

  8. Window structure for passivating solar cells based on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  9. Radiation damage of gallium arsenide production cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.; Joslin, D.; Garlick, J.; Lillington, D.; Gillanders, M.; Cavicchi, B.; Scott-Monck, J.; Kachare, R.; Anspaugh, B.

    1987-01-01

    High efficiency liquid phase epitaxy (LPE) gallium arsenide cells were irradiated with 1 Mev electrons up to fluences of 1 times 10 to the 16th power cm-2. Measurements of spectral response and dark and illuminated I-V data were made at each fluence and then, using computer codes, the experimental data was fitted to gallium arsenide cell models. In this way it was possible to determine the extent of the damage, and hence damage coefficients in both the emitter and base of the cell.

  10. Evidence of aluminium accumulation in aluminium welders.

    PubMed Central

    Elinder, C G; Ahrengart, L; Lidums, V; Pettersson, E; Sjögren, B

    1991-01-01

    Using atomic absorption spectrometry the aluminium concentrations in blood and urine and in two iliac bone biopsies obtained from welders with long term exposure to fumes containing aluminium were measured. The urinary excretion of two workers who had welded for 20 and 21 years varied between 107 and 351 micrograms Al/l, more than 10 times the concentration found in persons without occupational exposure. Urinary aluminium excretion remained high many years after stopping exposure. Blood and bone aluminium concentrations (4-53 micrograms Al/l and 18-29 micrograms Al/g respectively) were also raised but not to the same extent as urine excretion. It is concluded that long term exposure to aluminium by inhalation gives rise to accumulation of aluminium in the body and skeleton of health persons, and that the elimination of retained aluminium is very slow, in the order of several years. PMID:1954151

  11. Thin Films of Gallium Arsenide and Gallium Aluminum Arsenide by Metalorganic Chemical Vapor Deposition.

    NASA Astrophysics Data System (ADS)

    Look, Edward Gene Lun

    Low pressure metalorganic chemical vapor deposition (LPMOCVD) of thin films of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs) was performed in a horizontal cold wall chemical vapor deposition (CVD) reactor. The organometallic (group III) sources were triethylgallium (TEGa) and triethylaluminum (TEAl), used in conjunction with arsine (AsH_3) as the group V source. It was found that growth parameters such as growth temperature, pressure, source flow rates and temperatures have a profound effect on the film quality and composition. Depending on the particular combination of conditions, both the surface and overall morphologies may be affected. The films were nondestructively analyzed by Raman and photoreflectance spectroscopies, x-ray diffraction and rocking curve studies, scanning electron microscopy, energy dispersive spectroscopy, Hall measurements and film thicknesses were determined with a step profilometer.

  12. Joining of aluminium structures with aluminium foams

    SciTech Connect

    Burzer, J.; Bernard, T.; Bergmann, H.W.

    1998-12-31

    The aim of this work is the evaluation of new construction elements for applications in transportation industry which are based on new designs incorporating commonly applied aluminium structures and aluminium foams. The work includes the characterization of the joining process, the joining mechanism and the mechanical properties of the joining zone. A testing method for the joints is developed which is based on a common tensile test in order to evaluate the influence of the main laser welding parameters on the toughness of the joints and to afford a comparison between laser beam welding and gluing process. The analysis of the joining mechanism is investigated with the help of metallographic studies. In addition, the energy absorption properties of aluminium hollows filled and joined with foam structures are characterized.

  13. Gallium arsenide solar array subsystem study

    NASA Technical Reports Server (NTRS)

    Miller, F. Q.

    1982-01-01

    The effects on life cycle costs of a number of technology areas are examined for a gallium arsenide space solar array. Four specific configurations were addressed: (1) a 250 KWe LEO mission - planer array; (2) a 250 KWe LEO mission - with concentration; (3) a 50 KWe GEO mission planer array; (4) a 50 KWe GEO mission - with concentration. For each configuration, a baseline system conceptual design was developed and the life cycle costs estimated in detail. The baseline system requirements and design technologies were then varied and their relationships to life cycle costs quantified. For example, the thermal characteristics of the baseline design are determined by the array materials and masses. The thermal characteristics in turn determine configuration, performance, and hence life cycle costs.

  14. The interaction of gold with gallium arsenide

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar-cell contact materials, are known to react readily with gallium arsenide. Experiments designed to identify the mechanisms involved in these GaAs-metal interactions have yielded several interesting results. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are also explained by invoking this mechanism.

  15. III-V arsenide-nitride semiconductor

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  16. Gallium Arsenide solar cell radiation damage experiment

    NASA Technical Reports Server (NTRS)

    Maurer, R. H.; Kinnison, J. D.; Herbert, G. A.; Meulenberg, A.

    1991-01-01

    Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

  17. Contact formation in gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar cell contact materials, are known to react readily with gallium arsenide. Experiments were performed to identify the mechanisms involved in these GaAs-metal interactions. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are explained by invoking this mechanism.

  18. Producing gallium arsenide crystals in space

    NASA Technical Reports Server (NTRS)

    Randolph, R. L.

    1984-01-01

    The production of high quality crystals in space is a promising near-term application of microgravity processing. Gallium arsenide is the selected material for initial commercial production because of its inherent superior electronic properties, wide range of market applications, and broad base of on-going device development effort. Plausible product prices can absorb the high cost of space transportation for the initial flights provided by the Space Transportation System. The next step for bulk crystal growth, beyond the STS, is planned to come later with the use of free flyers or a space station, where real benefits are foreseen. The use of these vehicles, together with refinement and increasing automation of space-based crystal growth factories, will bring down costs and will support growing demands for high quality GaAs and other specialty electronic and electro-optical crystals grown in space.

  19. Radiation damage of gallium arsenide production cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.; Garlick, G. F. J.

    1987-01-01

    High-efficiency gallium arsenide cells, made by the liquid epitaxy method (LPE), have been irradiated with 1-MeV electrons up to fluences of 10 to the 16th e/sq cm. Measurements have been made of cell spectral response and dark and light-excited current-voltage characteristics and analyzed using computer-based models to determine underlying parameters such as damage coefficients. It is possible to use spectral response to sort out damage effects in the different cell component layers. Damage coefficients are similar to other reported in the literature for the emitter and buffer (base). However, there is also a damage effect in the window layer and possibly at the window emitter interface similar to that found for proton-irradiated liquid-phase epitaxy-grown cells. Depletion layer recombination is found to be less than theoretically expected at high fluence.

  20. A terminal molybdenum arsenide complex synthesized from yellow arsenic.

    PubMed

    Curley, John J; Piro, Nicholas A; Cummins, Christopher C

    2009-10-19

    A terminal molybdenum arsenide complex is synthesized in one step from the reactive As(4) molecule. The properties of this complex with its arsenic atom ligand are discussed in relation to the analogous nitride and phosphide complexes. PMID:19764796

  1. Computer simulation of radiation damage in gallium arsenide

    NASA Technical Reports Server (NTRS)

    Stith, John J.; Davenport, James C.; Copeland, Randolph L.

    1989-01-01

    A version of the binary-collision simulation code MARLOWE was used to study the spatial characteristics of radiation damage in proton and electron irradiated gallium arsenide. Comparisons made with the experimental results proved to be encouraging.

  2. Method of fabricating germanium and gallium arsenide devices

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban (Inventor)

    1990-01-01

    A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

  3. Silicon Nitride For Gallium Arsenide Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Nagle, J.; Morgan, David V.

    1987-04-01

    Gallium Arsenide, unlike silicon does not have a natural oxide with the dielectric and interface qualities of SiO2. As a consequence alternative techniques have to be developed for device and IC processing applications. Plasma deposited silicon nitride films are currently being investigated in many laboratories. This paper will deal with the characterization of such films deposited under a range of gas and plasma deposition conditions. The techniques of Infra Red Spectroscopy and Rutherford backscattering have been used for characterization of both "as deposited layers" and layers which have been annealed up to temperatures of 800 °C, after deposition. The use of RBS for silicon nitride on GaAs is limited since the relatively small nitride spectrum is superimposed on much larger GaAs spectrum. The problem can be removed by placing carbon test substrates alongside the GaAs wafers. This separates the silicon and nitrogen spectra from the substrate enabling enhanced accuracy to be obtained. In this paper the range of results obtained will be discussed in the context of the deposition condition in order to identify the optimum conditions for obtaining a stoichiometric compound and a high quality interface.

  4. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    SciTech Connect

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  5. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOEpatents

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  6. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOEpatents

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  7. Gallium arsenide processing for gate array logic

    NASA Technical Reports Server (NTRS)

    Cole, Eric D.

    1989-01-01

    The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

  8. Fatal aluminium phosphide poisoning

    PubMed Central

    Mittal, Sachin; Rani, Yashoda

    2015-01-01

    Aluminium phosphide (AlP) is a cheap solid fumigant and a highly toxic pesticide which is commonly used for grain preservation. AlP has currently aroused interest with a rising number of cases in the past four decades due to increased use for agricultural and non-agricultural purposes. Its easy availability in the markets has increased also its misuse for committing suicide. Phosphine inhibits cellular oxygen utilization and can induce lipid peroxidation. Poisoning with AlP has often occurred in attempts to commit suicide, and that more often in adults than in teenagers. This is a case of suicidal consumption of aluminium phosphide by a 32-year-old young medical anesthetist. Toxicological analyses detected aluminium phosphide. We believe that free access of celphos tablets in grain markets should be prohibited by law. PMID:27486362

  9. Technique for depositing silicon dioxide on indium arsenide improves adhesion

    NASA Technical Reports Server (NTRS)

    1970-01-01

    Planar array processing of indium arsenide wafers includes dicing into a prescribed geometry, then cleaning and drying, and finally pre-oxidizing in an oxygen atmosphere at 500 degrees C. The last step forms an oxide interface between the InAs surface and a glow discharge deposited layer of silicon dioxide.

  10. Aluminium and human breast diseases.

    PubMed

    Darbre, P D; Pugazhendhi, D; Mannello, F

    2011-11-01

    The human breast is exposed to aluminium from many sources including diet and personal care products, but dermal application of aluminium-based antiperspirant salts provides a local long-term source of exposure. Recent measurements have shown that aluminium is present in both tissue and fat of the human breast but at levels which vary both between breasts and between tissue samples from the same breast. We have recently found increased levels of aluminium in noninvasively collected nipple aspirate fluids taken from breast cancer patients (mean 268 ± 28 μg/l) compared with control healthy subjects (mean 131 ± 10 μg/l) providing evidence of raised aluminium levels in the breast microenvironment when cancer is present. The measurement of higher levels of aluminium in type I human breast cyst fluids (median 150 μg/l) compared with human serum (median 6 μg/l) or human milk (median 25 μg/l) warrants further investigation into any possible role of aluminium in development of this benign breast disease. Emerging evidence for aluminium in several breast structures now requires biomarkers of aluminium action in order to ascertain whether the presence of aluminium has any biological impact. To this end, we report raised levels of proteins that modulate iron homeostasis (ferritin, transferrin) in parallel with raised aluminium in nipple aspirate fluids in vivo, and we report overexpression of mRNA for several S100 calcium binding proteins following long-term exposure of MCF-7 human breast cancer cells in vitro to aluminium chlorhydrate. PMID:22099158

  11. Gallium arsenide pilot line for high performance components

    NASA Astrophysics Data System (ADS)

    Vehse, Robert C.; Lapham, E. F.

    1991-08-01

    The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. Physical and electrical analysis conclusively demonstrated that the EFET problem was caused by residual AlGaAs remaining in the EFET tubs. For our Self Aligned Refractory Gate Integrated Circuit (SARGIC) process to perform as designed, the FET gates must be placed directly on Gallium Arsenide. Residual AlGaAs increases the FET thresholds and thereby substantially changes device characteristics. We solved the problem by developing a new etch process using a PP etchant (H3PO4 and H2O2). AlGaAs is now completely removed from EFET tubs and EFET threshold control has been restored. With wafer starts suspended and other program work minimized to conserve resources, there was little primary circuit testing. A new result is that the 32-Bit Multiplier is functional at 60 MHz.

  12. Two-photon photovoltaic effect in gallium arsenide.

    PubMed

    Ma, Jichi; Chiles, Jeff; Sharma, Yagya D; Krishna, Sanjay; Fathpour, Sasan

    2014-09-15

    The two-photon photovoltaic effect is demonstrated in gallium arsenide at 976 and 1550 nm wavelengths. A waveguide-photodiode biased in its fourth quadrant harvests electrical power from the optical energy lost to two-photon absorption. The experimental results are in good agreement with simulations based on nonlinear wave propagation in waveguides and the drift-diffusion model of carrier transport in semiconductors. Power efficiency of up to 8% is theoretically predicted in optimized devices. PMID:26466255

  13. Occupational lung fibrosis in an aluminium polisher.

    PubMed

    De Vuyst, P; Dumortier, P; Rickaert, F; Van de Weyer, R; Lenclud, C; Yernault, J C

    1986-02-01

    An aluminium polisher developed severe lung fibrosis complicated by bronchial carcinoma. Although he was not submitted to the exposure risks usually described in aluminium lung (bauxite smelting, use of aluminium powders, aluminium welding), he worked in a high concentration of aluminium dust. This was demonstrated by mineralogical analyses which revealed large amounts of small metallic aluminium particles (0.5 micron - 5 micron) in bronchoalveolar lavage, lung tissue and lymph nodes 5 years after the end of exposure. Aluminium polishing seems to be a potential cause of aluminium lung. PMID:3699115

  14. Low temperature recombination and trapping analysis in high purity gallium arsenide by microwave photodielectric techniques

    NASA Technical Reports Server (NTRS)

    Khambaty, M. B.; Hartwig, W. H.

    1972-01-01

    Some physical theories pertinent to the measurement properties of gallium arsenide are presented and experimental data are analyzed. A model for explaining recombination and trapping high purity gallium arsenide, valid below 77 K is assembled from points made at various places and an appraisal is given of photodielectric techniques for material property studies.

  15. Aluminium, antiperspirants and breast cancer.

    PubMed

    Darbre, P D

    2005-09-01

    Aluminium salts are used as the active antiperspirant agent in underarm cosmetics, but the effects of widespread, long term and increasing use remain unknown, especially in relation to the breast, which is a local area of application. Clinical studies showing a disproportionately high incidence of breast cancer in the upper outer quadrant of the breast together with reports of genomic instability in outer quadrants of the breast provide supporting evidence for a role for locally applied cosmetic chemicals in the development of breast cancer. Aluminium is known to have a genotoxic profile, capable of causing both DNA alterations and epigenetic effects, and this would be consistent with a potential role in breast cancer if such effects occurred in breast cells. Oestrogen is a well established influence in breast cancer and its action, dependent on intracellular receptors which function as ligand-activated zinc finger transcription factors, suggests one possible point of interference from aluminium. Results reported here demonstrate that aluminium in the form of aluminium chloride or aluminium chlorhydrate can interfere with the function of oestrogen receptors of MCF7 human breast cancer cells both in terms of ligand binding and in terms of oestrogen-regulated reporter gene expression. This adds aluminium to the increasing list of metals capable of interfering with oestrogen action and termed metalloestrogens. Further studies are now needed to identify the molecular basis of this action, the longer term effects of aluminium exposure and whether aluminium can cause aberrations to other signalling pathways in breast cells. Given the wide exposure of the human population to antiperspirants, it will be important to establish dermal absorption in the local area of the breast and whether long term low level absorption could play a role in the increasing incidence of breast cancer. PMID:16045991

  16. Ca4As3 – a new binary calcium arsenide

    PubMed Central

    Hoffmann, Andrea V.; Hlukhyy, Viktor; Fässler, Thomas F.

    2015-01-01

    The crystal structure of the binary compound tetra­calcium triarsenide, Ca4As3, was investigated by single-crystal X-ray diffraction. Ca4As3 crystallizes in the Ba4P3 structure type and is thus a homologue of isotypic Sr4As3. The unit cell contains 32 Ca2+ cations, 16 As3− isolated anions and four centrosymmetric [As2]4– dumbbells. The As atoms in each of the dumbbells are connected by a single bond, thus this calcium arsenide is a Zintl phase. PMID:26870427

  17. Microwave dielectric constants of silicon, gallium arsenide, and quartz

    SciTech Connect

    Seeger, K.

    1988-06-01

    For a determination of the dielectric constants epsilon of semiconductors, a microwave transmission interference method has been applied. For the first time, a calculation is presented which yields the full interference spectrum, not only the position of the extremal points. A comparison of the theoretical and experimental spectra results in a higher precision than previously obtained. A metal evaporation of the sample faces which are in contact with the waveguide walls turns out to be very important. Relative dielectric constants of 11.6 for silicon, 12.8 for gallium arsenide, and 4.6 for crystalline quartz, all +- 0.05, have been obtained.

  18. Improved performance design of gallium arsenide solar cells for space

    NASA Technical Reports Server (NTRS)

    Parekh, R. H.; Barnett, A. M.

    1984-01-01

    An improved design, shallow junction heteroface, n-p, gallium arsenide solar cell for space applications is reported, with a predicted AM0 efficiency in the 21.9 to 23.0 percent range. The optimized n-p structure, while slightly more efficient, has the added advantage of being less susceptible to radiation-induced degradation by virtue of this thin top junction layer. Detailed spectral response curves and an analysis of the loss mechanisms are reported. The details of the design are readily measurable. The optimized designs were reached by quantifying the dominant loss mechanisms and then minimizing them by using computer simulations.

  19. Testing of gallium arsenide solar cells on the CRRES vehicle

    NASA Technical Reports Server (NTRS)

    Trumble, T. M.

    1985-01-01

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage.

  20. The toxicity of aluminium in humans.

    PubMed

    Exley, C

    2016-06-01

    We are living in the 'aluminium age'. Human exposure to aluminium is inevitable and, perhaps, inestimable. Aluminium's free metal cation, Alaq(3+), is highly biologically reactive and biologically available aluminium is non-essential and essentially toxic. Biologically reactive aluminium is present throughout the human body and while, rarely, it can be acutely toxic, much less is understood about chronic aluminium intoxication. Herein the question is asked as to how to diagnose aluminium toxicity in an individual. While there are as yet, no unequivocal answers to this problem, there are procedures to follow to ascertain the nature of human exposure to aluminium. It is also important to recognise critical factors in exposure regimes and specifically that not all forms of aluminium are toxicologically equivalent and not all routes of exposure are equivalent in their delivery of aluminium to target sites. To ascertain if Alzheimer's disease is a symptom of chronic aluminium intoxication over decades or breast cancer is aggravated by the topical application of an aluminium salt or if autism could result from an immune cascade initiated by an aluminium adjuvant requires that each of these is considered independently and in the light of the most up to date scientific evidence. The aluminium age has taught us that there are no inevitabilities where chronic aluminium toxicity is concerned though there are clear possibilities and these require proving or discounting but not simply ignored. PMID:26922890

  1. Single event upsets in gallium arsenide dynamic logic

    SciTech Connect

    Fouts, D.J. . ECE Dept.); Weatherford, T. ); McMorrow, C.; Melinger, J.S.; Campbell, A.B. )

    1994-12-01

    The advantages and disadvantages of using gallium arsenide (GaAs) dynamic logic in computers and digital systems are briefly discussed, especially with respect to space applications. A short introduction to the topology and operation of GaAs Two-Phase Dynamic FET Logic (TDFL) circuits is presented. Experiments for testing the SEU sensitivity of GaAs TDFL, using a laser to create charge collection events, are described. Results are used to estimate the heavy-ion, soft error rate for TDFL in a spacecraft in geosynchronous orbit, and the dependence of the SEU sensitivity on clock frequency, clock voltage, and clock phase. Analysis of the data includes a comparison between the SEU sensitivities of TDFL and the more common static form of GaAs logic, Directly Coupled FET Logic (DCFL). This is the first reported SEU testing of GaAs dynamic logic.

  2. Temperature dependence of carrier capture by defects in gallium arsenide

    SciTech Connect

    Wampler, William R.; Modine, Normand A.

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  3. Methods for forming group III-arsenide-nitride semiconductor materials

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2002-01-01

    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  4. Overlapping-Gate Ccd Imagers On Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Kosel, P. B.; Katzer, D. S.; Poore, R. E...

    1987-01-01

    Charge-coupled device (CCD) imagers have been fabricated on gallium arsenide (GaAs) with very closely spaced (<100nm) Schottky-barrier metal electrodes. The short interelectrode spacing was achieved by using anodic oxidation in an ethylene glycol based electrolyte. All the active device regions of the CCD imagers were formed by silicon implantation into semi-insulating GaAs substrates followed by rapid thermal activation. The photodetectors were Schottky barrier diodes formed with thin aluminum metal anodes over silicon-implanted active regions in the semi-insulating substrate. The detectors formed a linear array along one side of the CCD channel and a three-phase transfer electrode structure was used. The imagers have been tested with front side illumination at clocking speeds up to 25 MHz.

  5. Coated gallium arsenide neutron detectors : results of characterizationmeasurements.

    SciTech Connect

    Klann, R. T.; Perret, G.; Sanders, J.

    2006-09-29

    Effective detection of special nuclear materials (SNM) is essential for reducing the threat associated with stolen or improvised nuclear devices. Passive radiation detection technologies are primarily based on gamma-ray detection and subsequent isotope identification or neutron detection (specific to neutron sources and SNM). One major effort supported by the Department of Homeland Security in the area of advanced passive detection is handheld or portable neutron detectors for search and localization tasks in emergency response and interdiction settings. A successful SNM search detector will not only be able to confirm the presence of fissionable materials but also establish the location of the source in as short of time as possible while trying to minimize false alarms due to varying background or naturally occurring radioactive materials (NORM). For instruments based on neutron detectors, this translates to detecting neutrons from spontaneous fission or alpha-n reactions and being able to determine the direction of the source (or localizing the source through subsequent measurements). Polyethylene-coated gallium arsenide detectors were studied because the detection scheme is based on measuring the signal in the gallium arsenide wafers from the electrical charge of the recoil protons produced from the scattering of neutrons from the hydrogen nucleus. The inherent reaction has a directional dependence because the neutron and hydrogen nucleus have equivalent masses. The assessment and measurement of polyethylene-coated gallium arsenide detector properties and characteristics was the first phase of a project being performed for the Department of Homeland Security and the results of these tests are reported in this report. The ultimate goal of the project was to develop a man-portable neutron detection system that has the ability to determine the direction of the source from the detector. The efficiency of GaAs detectors for different sizes of polyethylene layers and

  6. Elastic Constants of Indium Arsenide at Room Temperature by Resonant Ultrasound Spectroscopy

    NASA Astrophysics Data System (ADS)

    Arammash, Fouzi; Yin, Ming

    2013-03-01

    The three independent elastic constants, C11, C12, and C44 of indium arsenide (InAs) single crystal were determined at room temperature using resonant ultrasound spectroscopy (RUS) technique. We will present and compare our results with those obtained from more conventional measurement techniques. We also compare our results to those of other III-V compound semiconductors such as gallium arsenide (GaAs).

  7. First principles predictions of intrinsic defects in aluminum arsenide, AlAs : numerical supplement.

    SciTech Connect

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in aluminum arsenide, AlAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz, 'First principles predictions of intrinsic defects in Aluminum Arsenide, AlAs', Materials Research Society Symposia Proceedings 1370 (2011; SAND2011-2436C), and intended for use as reference tables for a defect physics package in device models.

  8. Bit-systolic arithmetic arrays using dynamic differential gallium arsenide circuits

    NASA Technical Reports Server (NTRS)

    Beagles, Grant; Winters, Kel; Eldin, A. G.

    1992-01-01

    A new family of gallium arsenide circuits for fine grained bit-systolic arithmetic arrays is introduced. This scheme combines features of two recent techniques of dynamic gallium arsenide FET logic and differential dynamic single-clock CMOS logic. The resulting circuits are fast and compact, with tightly constrained series FET propagation paths, low fanout, no dc power dissipation, and depletion FET implementation without level shifting diodes.

  9. Aluminium phosphide-induced leukopenia.

    PubMed

    Ntelios, Dimitrios; Mandros, Charalampos; Potolidis, Evangelos; Fanourgiakis, Panagiotis

    2013-01-01

    Acute intoxication from the pesticide aluminium phosphide is a relatively rare, life-threatening condition in which cardiovascular decompensation is the most feared problem. We report the case of a patient exposed to aluminium phosphide-liberated phosphine gas. It resulted in the development of a gastroenteritis-like syndrome accompanied by severe reduction in white blood cell numbers as an early and prominent manifestation. By affecting important physiological processes such as mitochondrial function and reactive oxygen species homeostasis, phosphine could cause severe toxicity. After presenting the characteristics of certain leucocyte subpopulations we provide the current molecular understanding of the observed leukopenia which in part seems paradoxical. PMID:24172776

  10. Aluminium phosphide-induced leukopenia

    PubMed Central

    Ntelios, Dimitrios; Mandros, Charalampos; Potolidis, Evangelos; Fanourgiakis, Panagiotis

    2013-01-01

    Acute intoxication from the pesticide aluminium phosphide is a relatively rare, life-threatening condition in which cardiovascular decompensation is the most feared problem. We report the case of a patient exposed to aluminium phosphide-liberated phosphine gas. It resulted in the development of a gastroenteritis-like syndrome accompanied by severe reduction in white blood cell numbers as an early and prominent manifestation. By affecting important physiological processes such as mitochondrial function and reactive oxygen species homeostasis, phosphine could cause severe toxicity. After presenting the characteristics of certain leucocyte subpopulations we provide the current molecular understanding of the observed leukopenia which in part seems paradoxical. PMID:24172776

  11. The prophylactic reduction of aluminium intake.

    PubMed

    Lione, A

    1983-02-01

    The use of modern analytical methods has demonstrated that aluminium salts can be absorbed from the gut and concentrated in various human tissues, including bone, the parathyroids and brain. The neurotoxicity of aluminium has been extensively characterized in rabbits and cats, and high concentrations of aluminium have been detected in the brain tissue of patients with Alzheimer's disease. Various reports have suggested that high aluminium intakes may be harmful to some patients with bone disease or renal impairment. Fatal aluminium-induced neuropathies have been reported in patients on renal dialysis. Since there are no demonstrable consequences of aluminium deprivation, the prophylactic reduction of aluminium intake by many patients would appear prudent. In this report, the major sources of aluminium in foods and non-prescription drugs are summarized and alternative products are described. The most common foods that contain substantial amounts of aluminium-containing additives include some processed cheeses, baking powders, cake mixes, frozen doughs, pancake mixes, self-raising flours and pickled vegetables. The aluminium-containing non-prescription drugs include some antacids, buffered aspirins, antidiarrhoeal products, douches and haemorrhoidal medications. The advisability of recommending a low aluminium diet for geriatric patients is discussed in detail. PMID:6337934

  12. Aluminium toxicity in chronic renal insufficiency

    SciTech Connect

    Savory, J.; Bertholf, R.L.; Wills, M.R.

    1985-08-01

    Aluminium is a ubiquitous element in the environment and has been demonstrated to be toxic, especially in individuals with impaired renal function. Not much is known about the biochemistry of aluminium and the mechanisms of its toxic effects. Most of the interest in aluminium has been in the clinical setting of the hemodialysis unit. Here aluminium toxicity occurs due to contamination of dialysis solutions, and treatment of the patients with aluminium-containing phosphate binding gels. Aluminium has been shown to be the major contributor to the dialysis encephalopathy syndrome and an osteomalacic component of dialysis osteodystrophy. Other clinical disturbances associated with aluminium toxicity are a microcytic anemia and metastatic extraskeletal calcification. Aluminium overload can be treated effectively by chelation therapy with desferrioxamine and hemodialysis. Aluminium is readily transferred from the dialysate to the patient's -bloodstream during hemodialysis. Once transferred, the aluminium is tightly bound to non-dialysable plasma constituents. Very low concentrations of dialysate aluminium in the range of 10-15 micrograms/l are recommended to guard against toxic effects. Very few studies have been directed towards the separation of the various plasma species which bind eluminium. Gel filtration chromatography has been used to identify five major fractions, one of which is of low molecular weight and the others appear to be protein-aluminium complexes. Recommendations on aluminium monitoring have been published and provide safe and toxic concentrations. Also, the frequency of monitoring has been addressed. Major problems exist with the analytical methods for measuring aluminium which result from inaccurate techniques and contamination difficulties. 136 references.

  13. Bumblebee Pupae Contain High Levels of Aluminium

    PubMed Central

    Exley, Christopher; Rotheray, Ellen; Goulson, David

    2015-01-01

    The causes of declines in bees and other pollinators remains an on-going debate. While recent attention has focussed upon pesticides, other environmental pollutants have largely been ignored. Aluminium is the most significant environmental contaminant of recent times and we speculated that it could be a factor in pollinator decline. Herein we have measured the content of aluminium in bumblebee pupae taken from naturally foraging colonies in the UK. Individual pupae were acid-digested in a microwave oven and their aluminium content determined using transversely heated graphite furnace atomic absorption spectrometry. Pupae were heavily contaminated with aluminium giving values between 13.4 and 193.4 μg/g dry wt. and a mean (SD) value of 51.0 (33.0) μg/g dry wt. for the 72 pupae tested. Mean aluminium content was shown to be a significant negative predictor of average pupal weight in colonies. While no other statistically significant relationships were found relating aluminium to bee or colony health, the actual content of aluminium in pupae are extremely high and demonstrate significant exposure to aluminium. Bees rely heavily on cognitive function and aluminium is a known neurotoxin with links, for example, to Alzheimer’s disease in humans. The significant contamination of bumblebee pupae by aluminium raises the intriguing spectre of cognitive dysfunction playing a role in their population decline. PMID:26042788

  14. Synthesis of arsenic transition metal sulfides and metal arsenides

    SciTech Connect

    Singhal, G.H.; Brown, L.D.; Ryan, D.F.

    1993-12-31

    One of the chief problems in upgrading shale oil is the presence of inherent arsenic which is known to poison downstream catalysts. Highly dispersed transition metal sulfides formed in situ from the decomposition of dithiocarbamate (DTC) complexes of transition metals show excellent potential as dearsenation agents. The authors have studied the reaction of these sulfides with various arsenic compositions and characterized the metal arsenides and arsenic metal sulfides formed as well as the ease of their formation. Thus, the reaction of bis(butyldithiocarbamato)Ni, (NiBuDTC) with model compounds was very facile and gave NiAs, NiAsS, and NiAs2=xSx. In general the effectiveness of the sulfides for dearsenation followed the sequence Ni>Mo{much_gt}Co, while iron sulfides were totally ineffective. Based upon these results, tests were run in autoclaves (as well as a fixed-bed flow-through unit) with NiBuDTC and shale oil having 73 ppm inherent As. Under optimum conditions, dearsenation down to les than 1 ppm was obtained.

  15. Properties of binary transition-metal arsenides (TAs)

    NASA Astrophysics Data System (ADS)

    Saparov, Bayrammurad; Mitchell, Jonathan E.; Sefat, Athena S.

    2012-08-01

    We present thermodynamic and transport properties of transition-metal (T) arsenides, TAs, with T = Sc to Ni (3d), Zr, Nb, Ru (4d), Hf and Ta (5d). Characterization of these binaries is carried out with powder x-ray diffraction, temperature- and field-dependent magnetization and resistivity, temperature-dependent heat capacity, Seebeck coefficient, and thermal conductivity. All binaries show metallic behavior except TaAs and RuAs. TaAs, NbAs, ScAs and ZrAs are diamagnetic, while CoAs, VAs, TiAs, NiAs and RuAs show approximately Pauli paramagnetic behavior. FeAs and CrAs undergo antiferromagnetic ordering below TN ≈ 71 K and TN ≈ 260 K, respectively. MnAs is a ferromagnet below TC ≈ 317 K and undergoes hexagonal-orthorhombic-hexagonal transitions at TS ≈ 317 K and 384 K, respectively. For TAs, Seebeck coefficients vary between + 40 and - 40 μV K-1 in the 2-300 K range, whereas thermal conductivity values stay below 18 W m-1 K-1. The Sommerfeld coefficients γ are less than 10 mJ K-2 mol-1. At room temperature with application of 8 T magnetic field, large positive magnetoresistance is found for TaAs (˜25%), MnAs (˜90%) and NbAs (˜75%).

  16. Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

    NASA Technical Reports Server (NTRS)

    Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

    2016-01-01

    CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approx.576-867 C. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Metallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120deg triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3+, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

  17. Investigation of radiation defects in gallium arsenide under hydrostatic pressure

    SciTech Connect

    Brudnyi, V.N.; Vilisov, A.A.; Diamant, V.M.; Krivorotov, N.P.

    1980-01-01

    The spectral characteristics of gallium arsenide photodiodes irradiated with electrons (2 MeV, 300/sup 0/K) were used to study the influence of hydrostatic compression (up to 8 kbar) and temperature (77--300/sup 0/K) on the energy positions of radiation-defect levels. The pressure coefficients of the spectral positions of the impurity absorption bands at 1.2 and 1.37 eV indicated a genetic relationship between localized states H/sub 0/ (approx.E/sub v/+0.1 eV) and H/sub 1/ (approx.E/sub v/+0.25 eV) and the band extrema E/sub v/(GAMMA/sub 15/) and E/sub c/(GAMMA/sub 1/), respectively. The high piezoresistance coefficient (1/rho)(drho/dP)approx. =3.5 x 10/sup -4/ bar/sup -1/, recorded for the first time for n-type GaAs compensated by electron irradiation, was attributed to the influence of a state split off from the valence band and located in the upper half of the band gap at E/sub c/-0.3--0.4 eV. Isochronous annealing of radiation defects was investigated in the temperature range 300--35/sup 0/K.

  18. Greyscale proton beam writing in p-type Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Diering, D.; Spemann, D.; Lenzner, J.; Müller, St.; Böntgen, T.; von Wenckstern, H.

    2013-07-01

    Proton beam writing (PBW) is a well known method for micromachining, e.g. of semiconductors. Up to now, only few indication is given on how the resulting structure height in micromachined semiconductors can be controlled by means of fluence variation. This approach for 3D-microstructuring, called Greyscale PBW, was already successfully demonstrated for negative photoresists. In this study (1 0 0) p-type Gallium Arsenide (GaAs) was irradiated with 2.28 MeV protons and fluences in the range from 1.2×1014 H+ cm-2 to 1.0×1018 H+ cm-2 at the ion beam laboratory LIPSION and subsequently electrochemically etched with 10%-KOH. A linear dependency of structure height on ion fluence was established. In this way, pyramid-like structures as well as concave-shaped structures could be created. GaAs showed a lateral anisotropic etch behaviour during the development step with preferential etching along the [0 1 1] directions. On some structures the surface roughness and the change of conductivity were investigated by atomic force and scanning capacitance microscopy, respectively. The rms roughness of the surface of the structures was 5.4 nm and 10.6 nm for a fluence of 7.8×1015 H+ cm-2 and 1.2×1017 H+ cm-2, respectively. We observed an increasing etching rate for fluences larger than 1016 H+ cm-2.

  19. Gate modulation of anodically etched gallium arsenide nanowire random network

    NASA Astrophysics Data System (ADS)

    Aikawa, Shinya; Yamada, Kohei; Asoh, Hidetaka; Ono, Sachiko

    2016-06-01

    Gallium arsenide nanowires (GaAs NWs) formed by anodic etching show an electrically semi-insulating behavior because of charge carrier depletion caused by high interface state density. Here, we demonstrate the gate modulation of an anodically etched GaAs NW random network. By applying a reverse bias voltage after anodic etching of bulk GaAs, hydrogen ion exposure of the depleted NW region occurs, and then the interface state density is possibly decreased owing to the reduction in the amount of excess As generated at the interface between the amorphous Ga2O3 and GaAs layers. Consequently, the drain current of the thin-film transistor (TFT) with the GaAs NW random network was increased and was changed by the gate voltage. In contrast, the random network film remained in the insulator in the absence of reverse electrolysis treatment. The TFT performance is still insufficient but may be improved by optimizing the hydrogen ion exposure conditions.

  20. Gallium arsenide pilot line for high performance components

    NASA Astrophysics Data System (ADS)

    1990-01-01

    The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. The first thirty months of this contract are now complete, and this report covers the period from March 27 through September 24, 1989. Similar to the PT-2M SRAM function for memories, the six logic circuits of PT-2L and PT-2M have served their functions as stepping stones toward the custom, standard cell, and cell array logic circuits. All but one of these circuits was right first time; the remaining circuit had a layout error due to a bug in the design rule checker that has since been fixed. The working devices all function over the full temperature range from -55 to 125 C. They all comfortably meet the 200 MHz requirement. They do not solidly conform to the required input and output voltage levels, particularly Vih. It is known that these circuits were designed with the older design models and that they came from an era where the DFET thresholds were often not on target.

  1. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  2. Aluminium in foodstuffs and diets in Sweden.

    PubMed

    Jorhem, L; Haegglund, G

    1992-01-01

    The levels of aluminium have been determined in a number of individual foodstuffs on the Swedish market and in 24 h duplicate diets collected by women living in the Stockholm area. The results show that the levels in most foods are very low and that the level in vegetables can vary by a factor 10. Beverages from aluminium cans were found to have aluminium levels not markedly different from those in glass bottles. Based on the results of the analysis of individual foods, the average Swedish daily diet was calculated to contain about 0.6 mg aluminium, whereas the mean content of the collected duplicate diets was 13 mg. A cake made from a mix containing aluminium phosphate in the baking soda was identified as the most important contributor of aluminium to the duplicate diets. Tea and aluminium utensils were estimated to increase the aluminium content of the diets by approximately 4 and 2 mg/day, respectively. The results also indicate that a considerable amount of aluminium must be introduced from other sources. PMID:1542992

  3. Preliminary survey report: control technology for gallium arsenide processing at Hewlett Packard, San Jose, California

    SciTech Connect

    Lenihan, K.L.

    1987-04-01

    A walk-through survey of the Hewlett Packard Company facility in San Jose, California, was prompted by an interest in the use of gallium arsenide as an alternative to silicon for the semiconductor industry. This facility produced gallium-arsenide and gallium phosphide Potential hazards existed from solvents, acids, and gases employed in wafer production. Some of the solvents included fluorocarbon compounds, xylene, and 1,1,1-trichloroethane Arsine, phosphine, hydrogen, and silane gases were used in the production processes. Worker exposures to gallium arsenide or arsenic dust were lower during the cleaning operation than they had been in other similar facilities, perhaps due to the small size of the crystal pullers used at this particular facility. According to the author, this facility is a possible candidate for an in-depth industry survey, but may not be representative of the entire industry.

  4. Effect of fluorine ions on the growth and properties of anodic oxide layers of indium arsenide

    SciTech Connect

    Sorokin, I.N.; Gat'ko, L.E.

    1985-09-01

    The practical use of multielement IR photodetectors and idium arsenide memory elements, developed in recent years, largely determines the possibilities of the technology of deposition of dielectric layers on the surface of a semiconductor. In this paper the authors present the results of a study of the effect of fluorine ions introduced into the electrolyte on the rate of the anodic process and on the electrophysical properties of the AOF/indium arsenide interface. It is concluded that: the introduction of ammonium fluoride into a nonaqueous solution of sulfosalicylic acid increases the electrical conductivity of the electrolyte and the rate of oxidation of the semiconductor, decreases the absolute value of the potential of flat bands and the density of surface states at the oxide/indium-arsenide interface, and has no effect on the stability of the electrophysical parameters of MIS structures.

  5. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

    NASA Technical Reports Server (NTRS)

    Hurley, John S.

    1990-01-01

    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  6. Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

    NASA Technical Reports Server (NTRS)

    Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

    2016-01-01

    CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approximately 576-867 degrees Centigrade. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Me-tallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120-degree triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3 plus, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

  7. Combined Silicon and Gallium Arsenide Solar Cell UV Testing

    NASA Technical Reports Server (NTRS)

    Willowby, Douglas

    2005-01-01

    The near and long-term effect of UV on silicon solar cells is relatively understood. In an effort to learn more about the effects of UV radiation on the performance of GaAs/Ge solar cells, silicon and gallium arsenide on germanium (GaAs/Ge) solar cells were placed in a vacuum chamber and irradiated with ultraviolet light by a Spectrolab XT 10 solar simulator. Seventeen GaAs/Ge and 8 silicon solar cells were mounted on an 8 inch copper block. By having all the cells on the same test plate we were able to do direct comparison of silicon and GaAs/Ge solar cell degradation. The test article was attached to a cold plate in the vacuum chamber to maintain the cells at 25 degrees Celsius. A silicon solar cell standard was used to measure beam uniformity and any degradation of the ST-10 beam. The solar cell coverings tested included cells with AR-0213 coverglass, fused silica coverglass, BRR-0213 coverglass and cells without coverglass. Of interest in the test is the BRR-0213 coverglass material manufactured by OCLI. It has an added Infrared rejection coating to help reduce the solar cell operating temperature. This coverglass is relatively new and of interest to several current and future programs at Marshall. Due to moves of the laboratory equipment and location only 350 hours of UV degradation have been completed. During this testing a significant leveling off in the rate of degradation was reached. Data from the test and comparisons of the UV effect of the bare cells and cells with coverglass material will be presented.

  8. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  9. Valley degeneracy in biaxially strained aluminum arsenide quantum wells

    NASA Astrophysics Data System (ADS)

    Prabhu-Gaunkar, S.; Birner, S.; Dasgupta, S.; Knaak, C.; Grayson, M.

    2011-09-01

    This paper describes a complete analytical formalism for calculating electron subband energy and degeneracy in strained multivalley quantum wells grown along any orientation with explicit results for AlAs quantum wells (QWs). In analogy to the spin index, the valley degree of freedom is justified as a pseudospin index due to the vanishing intervalley exchange integral. A standardized coordinate transformation matrix is defined to transform between the conventional-cubic-cell basis and the QW transport basis whereby effective mass tensors, valley vectors, strain matrices, anisotropic strain ratios, piezoelectric fields, and scattering vectors are all defined in their respective bases. The specific cases of (001)-, (110)-, and (111)-oriented aluminum arsenide (AlAs) QWs are examined, as is the unconventional (411) facet, which is of particular importance in AlAs literature. Calculations of electron confinement and strain for the (001), (110), and (411) facets determine the critical well width for crossover from double- to single-valley degeneracy in each system. The biaxial Poisson ratio is calculated for the high-symmetry lower Miller index (001)-, (110)-, and (111)-oriented QWs. An additional shear-strain component arises in the higher Miller index (411)-oriented QWs and we define and solve for a shear-to-biaxial strain ratio. The notation is generalized to address non-Miller-indexed planes so that miscut substrates can also be treated, and the treatment can be adapted to other multivalley biaxially strained systems. To help classify anisotropic intervalley scattering, a valley scattering primitive unit cell is defined in momentum space, which allows one to distinguish purely in-plane momentum scattering events from those that require an out-of-plane momentum component.

  10. Lactobacillus plantarum CCFM639 alleviates aluminium toxicity.

    PubMed

    Yu, Leilei; Zhai, Qixiao; Liu, Xiaoming; Wang, Gang; Zhang, Qiuxiang; Zhao, Jianxin; Narbad, Arjan; Zhang, Hao; Tian, Fengwei; Chen, Wei

    2016-02-01

    Aluminium (Al) is the most abundant metal in the earth's crust. Al exposure can cause a variety of adverse physiological effects in humans and animals. Our aim was to demonstrate that specific probiotic bacteria can play a special physiologically functional role in protection against Al toxicity in mice. Thirty strains of lactic acid bacteria (LAB) were tested for their aluminium-binding ability, aluminium tolerance, their antioxidative capacity, and their ability to survive the exposure to artificial gastrointestinal (GI) juices. Lactobacillus plantarum CCFM639 was selected for animal experiments because of its excellent performance in vitro. Forty mice were divided into four groups: control, Al only, Al plus CCFM639, and Al plus deferiprone (DFP). CCFM639 was administered at 10(9) CFU once daily for 10 days, followed by a single oral dose of aluminium chloride hexahydrate at 5.14 mg aluminium (LD50) for each mouse. The results showed that CCFM639 treatment led to a significant reduction in the mortality rates with corresponding decrease in intestinal aluminium absorption and in accumulation of aluminium in the tissues and amelioration of hepatic histopathological damage. This probiotic treatment also resulted in alleviation of hepatic, renal, and cerebral oxidative stress. The treatment of L. plantarum CCFM639 has potential as a therapeutic dietary strategy against acute aluminium toxicity. PMID:26610803

  11. Aluminium Diphosphamethanides: Hidden Frustrated Lewis Pairs.

    PubMed

    Styra, Steffen; Radius, Michael; Moos, Eric; Bihlmeier, Angela; Breher, Frank

    2016-07-01

    The synthesis and characterisation of two aluminium diphosphamethanide complexes, [Al(tBu)2 {κ(2) P,P'-Mes*PCHPMes*}] (3) and [Al(C6 F5 )2 {κ(2) P,P'-Mes*PCHPMes*}] (4), and the silylated analogue, Mes*PCHP(SiMe3 )Mes* (5), are reported. The aluminium complexes feature four-membered PCPAl core structures consisting of diphosphaallyl ligands. The silylated phosphine 5 was found to be a valuable precursor for the synthesis of 4 as it cleanly reacts with the diaryl aluminium chloride [(C6 F5 )2 AlCl]2 . The aluminium complex 3 reacts with molecular dihydrogen at room temperature under formation of the acyclic σ(2) λ(3) ,σ(3) λ(3) -diphosphine Mes*PCHP(H)Mes* and the corresponding dialkyl aluminium hydride [tBu2 AlH]3 . Thus, 3 belongs to the family of so-called hidden frustrated Lewis pairs. PMID:27271936

  12. Spontaneous atomic ordering in MOVPE grown gallium arsenide antimonide

    NASA Astrophysics Data System (ADS)

    Jiang, Weiyang

    process. It is unlikely that the ordering mechanism is similar to the dimer-induced strain models that have been successfully used to explain CuPt ordering in InGaP. We propose a simple model based on alternating incorporation of group V adatoms at step edges. Keywords. GaAsSb; MOVPE; Bi surfactant; TEM; CuAu ordering. Subject. Gallium Arsenide Antimonide; Metalorganic Vapor-phase Epitaxy; Bismuth Surfactant; Transmission Electron Microscopy; CuAu Ordering.

  13. Skylab experiment performance evaluation manual. Appendix J: Experiment M555 gallium arsenide single crystal growth (MSFC)

    NASA Technical Reports Server (NTRS)

    Byers, M. S.

    1973-01-01

    Analyses for Experiment M555, Gallium Arsenide Single Crystal Growth (MSFC), to be used for evaluating the performance of the Skylab corollary experiments under preflight, inflight, and post-flight conditions are presented. Experiment contingency plan workaround procedure and malfunction analyses are presented in order to assist in making the experiment operationally successful.

  14. NMR microspectroscopy using 100 microns planar RF coils fabricated on gallium arsenide substrates.

    PubMed

    Peck, T L; Magin, R L; Kruse, J; Feng, M

    1994-07-01

    A family of planar gold RF microcoils were fabricated using microlithography on a gallium arsenide substrate. The microcoils were used in 1H nuclear magnetic resonance (NMR) spectroscopy experiments at 300 MHz (7.05 T). These new microcoils are a key component in the design of integrated MR coils and amplifiers for NMR microspectroscopy. PMID:7523278

  15. Electro-optic modulator for infrared laser using gallium arsenide crystal

    NASA Technical Reports Server (NTRS)

    Walsh, T. E.

    1968-01-01

    Gallium arsenide electro-optic modulator used for infrared lasers has a mica quarter-wave plate and two calcite polarizers to amplitude or phase modulate an infrared laser light source in the wavelength range from 1 to 3 microns. The large single crystal has uniformly high resistivities, is strain free, and comparable in quality to good optical glass.

  16. Biological indicators of exposure to total and respirable aluminium dust fractions in a primary aluminium smelter.

    PubMed Central

    Röllin, H B; Theodorou, P; Cantrell, A C

    1996-01-01

    OBJECTIVES: The study attempts to define biological indicators of aluminium uptake and excretion in workers exposed to airborne aluminium compounds in a primary aluminium smelter. Also, this study defines the total and respirable aluminium dust fractions in two different potrooms, and correlates their concentrations with biological indicators in this group of workers. METHODS: Air was sampled at defined work sites. Non-destructive and conventional techniques were used to find total and respirable aluminium content of the dust. Blood and urine was collected from 84 volunteers employed at various work stations throughout the smelter and from two different cohorts of controls matched for sex, age, and socioeconomic status. Aluminium in serum samples and urine specimens was measured by flameless atomic absorption with a PE 4100 ZL spectrometer. RESULTS: The correlation of aluminium concentrations in serum and urine samples with the degree of exposure was assessed for three arbitrary exposure categories; low (0.036 mg Al/m3), medium (0.35 mg Al/m3) and high (1.47 mg Al/m3) as found in different areas of the smelter. At medium and high exposure, the ratio of respirable to total aluminium in the dust samples varied significantly. At high exposure, serum aluminium, although significantly raised, was still within the normal range of an unexposed population. The workers with low exposure excreted aluminium in urine at levels significantly higher than the controls, but still within the normal range of the population. However, potroom workers with medium and high exposure had significantly higher urinary aluminium than the normal range. CONCLUSIONS: It is concluded that only urinary aluminium constitutes a practical index of occupational exposure at or above 0.35 mg Al/m3, and that the respirable fraction of the dust may play a major role in the biological response to exposure to aluminium in a smelter environment. PMID:8758038

  17. Molecular beam epitaxy growth and characterization of dysprosium phosphide and dysprosium arsenide in gallium arsenide and gallium phosphide

    NASA Astrophysics Data System (ADS)

    Lee, Paul Piyawong

    The ability to grow thermally stable Schottky/ohmic contacts and buried, epitaxial metallic or semimetallic layers on semiconductors has many potential applications in novel device structures. Many rare earth group-V compounds with the sodium chloride structure possess the properties that make them potential candidates for stable contacts, buried layers, and other applications. In this work, two novel rare earth compounds, namely dysprosium phosphide (DyP) and dysprosium arsenide (DyAs) have been studied for high temperature ohmic/Schottky contacts to III-V semiconductors as well as for buried metal layers in semiconductor/metal/semiconductor structures. DyP and DyAs have been grown by molecular beam epitaxy on GaAs and GaP substrates. Both DyP and DyAs display metallic behavior and have room temperature resistivities of 8 x 10--5 and 1 x 10--4 Ocm, respectively. The electron concentrations for DyP and DyAs are about 4 x 1020 and 1 x 1021 cm--3, respectively. High quality DyP films as determined by XRD, AFM, and TEM can be achieved at a wide range of substrate temperatures (500°C to 600°C) with excess phosphorus pressure. Unlike most rare earth-group V compounds, DyP films are stable in air with no sign of oxidation. DyP films deposited on n-type GaAs and GaP exhibit Schottky behavior with room temperature barrier heights of 0.83 and 0.90 eV, respectively, with ideality factors close to unity and low reverse bias leakage current densities. These contacts are stable up to 250°C and 350°C for GaAs and GaP, respectively. DyAs films on the other hand, oxidize in air and display weak Schottky behavior on n-type GaAs. DyP has been grown as buried layers in both GaAs/DyP/GaAs and GaAs/DyP/GaP structures. Although high quality DyP layers have been achieved, the GaAs overlayers contain defects such as twins. The poor wetting of GaAs on DyP and the crystal symmetry between the two materials are responsible for the three-dimensional growth and the defects found in the Ga

  18. Alveolar proteinosis associated with aluminium dust inhalation.

    PubMed

    Chew, R; Nigam, S; Sivakumaran, P

    2016-08-01

    Secondary alveolar proteinosis is a rare lung disease which may be triggered by a variety of inhaled particles. The diagnosis is made by detection of anti-granulocyte-macrophage colony-stimulating factor antibodies in bronchoalveolar lavage fluid, which appears milky white and contains lamellar bodies. Aluminium has been suggested as a possible cause, but there is little evidence in the literature to support this assertion. We report the case of a 46-year-old former boilermaker and boat builder who developed secondary alveolar proteinosis following sustained heavy aluminium exposure. The presence of aluminium was confirmed both by histological examination and metallurgical analysis of a mediastinal lymph node. Despite cessation of exposure to aluminium and treatment with whole-lung lavage which normally results in improvements in both symptoms and lung function, the outcome was poor and novel therapies are now being used for this patient. It may be that the natural history in aluminium-related alveolar proteinosis is different, with the metal playing a mediating role in the disease process. Our case further supports the link between aluminium and secondary alveolar proteinosis and highlights the need for measures to prevent excessive aluminium inhalation in relevant industries. PMID:27099254

  19. Aluminium in Biological Environments: A Computational Approach

    PubMed Central

    Mujika, Jon I; Rezabal, Elixabete; Mercero, Jose M; Ruipérez, Fernando; Costa, Dominique; Ugalde, Jesus M; Lopez, Xabier

    2014-01-01

    The increased availability of aluminium in biological environments, due to human intervention in the last century, raises concerns on the effects that this so far “excluded from biology” metal might have on living organisms. Consequently, the bioinorganic chemistry of aluminium has emerged as a very active field of research. This review will focus on our contributions to this field, based on computational studies that can yield an understanding of the aluminum biochemistry at a molecular level. Aluminium can interact and be stabilized in biological environments by complexing with both low molecular mass chelants and high molecular mass peptides. The speciation of the metal is, nonetheless, dictated by the hydrolytic species dominant in each case and which vary according to the pH condition of the medium. In blood, citrate and serum transferrin are identified as the main low molecular mass and high molecular mass molecules interacting with aluminium. The complexation of aluminium to citrate and the subsequent changes exerted on the deprotonation pathways of its tritable groups will be discussed along with the mechanisms for the intake and release of aluminium in serum transferrin at two pH conditions, physiological neutral and endosomatic acidic. Aluminium can substitute other metals, in particular magnesium, in protein buried sites and trigger conformational disorder and alteration of the protonation states of the protein's sidechains. A detailed account of the interaction of aluminium with proteic sidechains will be given. Finally, it will be described how alumnium can exert oxidative stress by stabilizing superoxide radicals either as mononuclear aluminium or clustered in boehmite. The possibility of promotion of Fenton reaction, and production of hydroxyl radicals will also be discussed. PMID:24757505

  20. Structural study of VO {sub x} doped aluminium fluoride and aluminium oxide catalysts

    SciTech Connect

    Scheurell, Kerstin; Scholz, Gudrun; Kemnitz, Erhard

    2007-02-15

    The structural properties of vanadium doped aluminium oxyfluorides and aluminium oxides, prepared by a modified sol-gel synthesis route, were thoroughly investigated. The influence of the preparation technique and the calcination temperature on the coordination of vanadium, aluminium and fluorine was analysed by different spectroscopic methods such as Raman, MAS NMR and ESR spectroscopy. In all samples calcined at low temperatures (350 deg. C), vanadium coexists in two oxidation states V{sup IV} and V{sup V}, with V{sup IV} as dominating species in the vanadium doped aluminium oxyfluorides. In the fluoride containing solids aluminium as well as vanadium are coordinated by fluorine and oxygen. Thermal annealing of 800 deg. C leads to an extensive reorganisation of the original matrices and to the oxidation of V{sup IV} to V{sup V} in both systems. - Graphical abstract: Structure model for VO {sub x} doped aluminium oxide.

  1. Investigation of the aluminium-aluminium oxide reversible transformation as observed by hot stage electron microscopy.

    NASA Technical Reports Server (NTRS)

    Grove, C. A.; Judd, G.; Ansell, G. S.

    1972-01-01

    Thin foils of high purity aluminium and an Al-Al2O3 SAP type of alloy were oxidised in a specially designed hot stage specimen chamber in an electron microscope. Below 450 C, amorphous aluminium oxide formed on the foil surface and was first detectable at foil edges, holes, and pits. Islands of aluminium then nucleated in this amorphous oxide. The aluminium islands displayed either a lateral growth with eventual coalescence with other islands, or a reoxidation process which caused the islands to disappear. The aluminium island formation was determined to be related to the presence of the electron beam. A mechanism based upon electron charging due to the electron beam was proposed to explain the nucleation, growth, coalescence, disappearance, and geometry of the aluminium islands.

  2. Thin-film gallium arsenide solar-cell research. Annual project report, March 1, 1980-February 28, 1981

    SciTech Connect

    Chu, S.S.

    1981-03-01

    The optimization of the deposition of gallium arsenide films of 10 ..mu..m thickness or less has been carried out with the objective of obtaining gallium arsenide films with uniform microstructure and good electrical properties. Gallium arsenide films of 10 ..mu..m or less thickness deposited on tungsten/graphite substrates exhibit, in most cases, pronounced shunting effects in large area MOS solar cells due to grain boundaries. The effective passivation of grain boundaries is necessary to produce solar cells with good conversion efficiency. Different grain boundary passivation techniques have been investigated to determine their effectiveness for large area solar cells from the deposited gallium arsenide films. The combination of ruthenium treatment and thermal oxidation has been shown to be the most effective passivation technique for large area MOS solar cells. MOS solar cells have been fabricated from gallium arsenide films of 10 ..mu..m thickness. The gallium arsenide films were treated with ruthenium ion and followed by thermal oxidation. The solar cells are of the configuration TiO/sub 2//Ag(grid contact)/Au/oxide/n-GaAs/n/sup +/-GaAs/W/graphite. MOS solar cells of 9 cm/sup 2/ area with an AM1 efficiency of up to 8.5% have been prepared reproducibly. The fabrication and characterization of thin film gallium arsenide homojunction solar cells have been initiated. The p/sup +/-n junction was formed in-situ by depositing the Zn-doped p/sup +/-layer immediately after the deposition of n/n/sup +/-layers. Without any surface passivation treatment, solar cells of 8 cm/sup 2/ area with an AM1 efficiency of about 7% have been prepared. With proper optimization in the fabrication processes, the conversion efficiency should be greatly improved. Therefore homojunction structure is a promising approach for the fabrication of thin film gallium arsenide solar cells.

  3. The removal of iron from molten aluminium

    SciTech Connect

    Donk, H.M. van der; Nijhof, G.H.; Castelijns, C.A.M.

    1995-12-31

    In this work an overview is given about the techniques available for the removal of metallic impurities from molten aluminium. The overview is focused on the removal of iron. Also, some experimental results are given about the creation of iron-rich intermetallic compounds in an aluminium system, which are subsequently removed by gravity segregation and filtration techniques. This work is part of an ongoing research project of three major European aluminium companies who are co-operating on the subject of recycling of aluminium packaging materials recovered from household waste by means of Eddy-Current techniques. Using this technique the pick-up of some contaminating metals, particularly iron, is almost unavoidable.

  4. First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?

    NASA Astrophysics Data System (ADS)

    Lindsay, L.; Broido, D. A.; Reinecke, T. L.

    2013-07-01

    We have calculated the thermal conductivities (κ) of cubic III-V boron compounds using a predictive first principles approach. Boron arsenide is found to have a remarkable room temperature κ over 2000Wm-1K-1; this is comparable to those in diamond and graphite, which are the highest bulk values known. We trace this behavior in boron arsenide to an interplay of certain basic vibrational properties that lie outside of the conventional guidelines in searching for high κ materials, and to relatively weak phonon-isotope scattering. We also find that cubic boron nitride and boron antimonide will have high κ with isotopic purification. This work provides new insight into the nature of thermal transport at a quantitative level and predicts a new ultrahigh κ material of potential interest for passive cooling applications.

  5. Arsenide-antimonide hetero-junction tunnel transistors for low power logic applications

    NASA Astrophysics Data System (ADS)

    Mohata, Dheeraj Kumar

    Aggressive supply voltage (VCC) scaling of future transistors without increasing the off-state leakage while maintaining performance remains an important challenge. Hetero-junction Tunnel FETs (HTFETs) with steep switching slope and high drive current at low supply voltage (below 0.35V) have emerged as promising low VCC device option. GaAs1-ySby source and InxGa1-xAs channel form lattice matched arsenide-antimonide staggered hetero-junctions with compositionally tunable effective tunnel barrier height. Unlike homo-junction Tunnel FETs, the effective barrier height of staggered hetero-junctions can be made negligibly small while maintaining large band-gaps in the respective source, channel and drain regions, thus, enabling TFETs to achieve MOSFET like drive currents while maintaining higher on-off ratio. This dissertation focuses on experimental demonstration of mixed arsenide-antimonide hetero-junction TFETs with nano-pillar tunnel transistor architecture exhibiting MOSFET-like on-current and high on-off ratio for ultra-low power logic applications. Within this dissertation, using experimental demonstration and detailed modeling, following aspects of the n-channel hetero-junction Tunnel FETs will be discussed: a) Material selection and device design; b) Nano-pillar TFET process flow development; c) Hetero-junction TFET growth and materials characterization; and d) Hetero-junction TFET transport study. The dissertation concludes with benchmarking of the performance of arsenide-antimonide n-channel Tunnel FETs with those reported till date, and an address to the feasibility of arsenide-antimonide based complementary Tunnel FET logic for future ultra low power logic applications.

  6. An advanced space photovoltaic concentrator array using Fresnel lenses, gallium arsenide cells, and prismatic cell covers

    NASA Technical Reports Server (NTRS)

    O'Neill, Mark J.; Piszczor, Michael F.

    1988-01-01

    The current status of a space concentrator array which uses refractive optics, gallium arsenide cells, and prismatic cell covers to achieve excellent performance at a very low array mass is documented. The prismatically covered cells have established records for space cell performance (24.2 percent efficient at 100 AM0 suns and 25 C) and terrestrial single-junction cell performance (29.3 percent efficient at 200 AM1.5 suns and 25 C).

  7. Aluminium in the blood and urine of industrially exposed workers.

    PubMed Central

    Sjögren, B; Lundberg, I; Lidums, V

    1983-01-01

    Blood and urine aluminium concentrations were studied in industrially exposed workers using electrothermal atomic absorption spectrometry. Welders and workers making aluminium powder and aluminium sulphate had higher concentrations in blood and urine than non-exposed referents. Workers in the electrolytic production of aluminium had higher urine but not blood concentrations than the referents. Thus aluminium was found to be absorbed by all industrially exposed workers. Blood concentrations were lower than those presumably associated with aluminium induced encephalopathy in patients receiving dialysis. PMID:6871119

  8. Density Functional Theory insights into the mechanism of noncollinear incommensurate spin density waves in Iron Arsenide

    NASA Astrophysics Data System (ADS)

    Schoonmaker, Robert; Clark, Stewart; Lancaster, Tom; Frawley, Thomas; Hatton, Peter

    Iron arsenide intersects interesting physics between novel superconductors and other helical magnetic ordering in Pnma metal arsenide materials. Recent diffraction data has found a more complex ordering than a simple helical incommensurate spin density wave. Instead iron arsenide exhibits a definite chirality to the helimagnetism, an ellipticity in the spiral not aligned with the crystal axis, and resonant diffraction peaks forbidden by the Pnma symmetry. From non-magnetic and collinear density functional theory calculations we present insight into the mechanisms for the formation of this helimagnetic state. We find that ferromagnetic superexchange is a likely mechanism for the spin ordering and that the noncollinear ordering under this regime is caused by the spins on neighbouring irons arranging to minimise direct exchange between iron atoms, and also minimize disruption of the ferromagnetic superexchange between priveleged iron-arsenic pairs. To explain the forbidden peaks in the diffraction we have performed second-order spin-orbit perturbation calculations on the nonmagnetic calculation, which finds that the orbital ordering on the iron atoms coupled to the helimagnetism will lead to the otherwise symmetry-forbidden peaks.

  9. Thermal expansion of gallium arsenide layers grown by molecular beam epitaxy at low temperatures

    NASA Astrophysics Data System (ADS)

    Leszczynski, M.; Walker, J. F.

    1993-03-01

    The thermal expansion of low-temperature (190-220 °C) MBE grown gallium arsenide (LT GaAs) was measured using x-ray diffraction methods. The experiment was performed in order to observe the influence of high nonstoichiometric excess (about 1%) of arsenic on the thermal expansion of gallium arsenide. The diffraction measurements enabled the simultaneous monitoring of the lattice constants of the LT GaAs layers and their semi-insulating GaAs substrates. Their lattice mismatch was only slightly temperature dependent and decreased by about 5% with a temperature rise from 77 K (in dark) up to 550 K. This means that the value of the thermal expansion coefficient of as-grown LT GaAs was lower only by about 0.05×10-6 K-1 than that of the semi-insulating GaAs substrate. Reduction of arsenic excess by air annealing at 420 °C resulted in the decrease of lattice mismatch and the difference in the thermal expansion. This means that both are related to such point defects as arsenic antisites and interstitials. The experimental results are compared with the previously published data for variously doped gallium arsenide samples.

  10. Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

    NASA Technical Reports Server (NTRS)

    Francis, R. W.; Betz, F. E.

    1985-01-01

    The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

  11. Surface modification for aluminium pigment inhibition.

    PubMed

    Karlsson, Philip; Palmqvist, Anders E C; Holmberg, Krister

    2006-12-21

    This review concerns surface treatment of aluminium pigments for use in water borne coatings. Aluminium pigments are commonly used in coatings to give a silvery and shiny lustre to the substrate. Such paints and inks have traditionally been solvent borne, since aluminium pigment particles react with water. For environmental and health reasons solvent borne coatings are being replaced by water borne and the aluminium pigments then need to be surface modified in order to stand exposure to water. This process is called inhibition and both organic and inorganic substances are used as inhibiting agents. The organic inhibiting agents range from low molecular weight substances, such as phenols and aromatic acids, via surfactants, in particular alkyl phosphates and other anionic amphiphiles, to high molecular weight compounds, such as polyelectrolytes. A common denominator for them all is that they contain a functional group that interacts specifically with aluminium at the surface. A particularly strong interaction is obtained if the inhibiting agent contains functional groups that form chelating complex with surface Al(III). Encapsulation of the pigment can be made by in situ polymerization at the surface of the pigment and a recent approach is to have the polymerization occur within a double layer of adsorbed surfactant. The inorganic route is dominated by coating with silica, and recent progress has been made using an alkoxide, such as tetraethoxysilane as silica precursor. Such silica coated aluminium pigments are comparable in performance to chromate inhibited pigments and thus offer a possible heavy metal-free alternative. There are obvious connections between surface modifications made to prevent the pigment to react with water and inhibition of corrosion of macroscopic aluminium surfaces. PMID:17239333

  12. Aluminium and the human breast.

    PubMed

    Darbre, P D

    2016-06-01

    The human population is exposed to aluminium (Al) from diet, antacids and vaccine adjuvants, but frequent application of Al-based salts to the underarm as antiperspirant adds a high additional exposure directly to the local area of the human breast. Coincidentally the upper outer quadrant of the breast is where there is also a disproportionately high incidence of breast cysts and breast cancer. Al has been measured in human breast tissues/fluids at higher levels than in blood, and experimental evidence suggests that at physiologically relevant concentrations, Al can adversely impact on human breast epithelial cell biology. Gross cystic breast disease is the most common benign disorder of the breast and evidence is presented that Al may be a causative factor in formation of breast cysts. Evidence is also reviewed that Al can enable the development of multiple hallmarks associated with cancer in breast cells, in particular that it can cause genomic instability and inappropriate proliferation in human breast epithelial cells, and can increase migration and invasion of human breast cancer cells. In addition, Al is a metalloestrogen and oestrogen is a risk factor for breast cancer known to influence multiple hallmarks. The microenvironment is established as another determinant of breast cancer development and Al has been shown to cause adverse alterations to the breast microenvironment. If current usage patterns of Al-based antiperspirant salts contribute to causation of breast cysts and breast cancer, then reduction in exposure would offer a strategy for prevention, and regulatory review is now justified. PMID:26997127

  13. Investigation of detonation initiation in aluminium suspensions

    NASA Astrophysics Data System (ADS)

    Veyssiere, B.; Khasainov, B. A.; Briand, A.

    2008-09-01

    Detonation initiation is investigated in aluminium/oxygen and aluminium/air mixtures. Critical conditions for initiation of spherical detonations are examined in analogy with the criteria defined for gaseous mixtures, which correlate critical parameters of detonation initiation to the characteristic size of the cellular structure. However, experimental data on the detonation cell size in these two-phase mixtures are very scarce, on account of the difficulty to perform large-scale experiments. Therefore, 2D numerical simulations of the detonation cellular structure have been undertaken, with the same combustion model for Al/air and Al/O2 mixtures. The cell size is found to be λ = 37.5 cm for a rich ( r = 1.61) aluminium-air mixture, and λ = 7.5 cm for a stoichiometric aluminium-oxygen mixture, which is in reasonable agreement with available experimental data. Calculations performed in large-scale configurations (up to 25 m in length and 1.5 m in lateral direction) suggest that the critical initiation energy and predetonation radius for direct initiation of the unconfined detonation in the aluminium-air mixture are, respectively, 10 kg of TNT and 8 m. Moreover, numerical simulations reveal that the structure of the detonation wave behind the leading front is even more complicated than in pure gaseous mixtures, due to two-phase flow effects.

  14. Hot tearing evaluation for aluminium alloys

    NASA Astrophysics Data System (ADS)

    Brůna, Marek

    2016-06-01

    Hot tearing during solidification of aluminium alloys castings can be a serious problem. This phenomenon is well known but still insufficiently investigated. Hot tearing occurs in form of irregular cracks in metal castings that develop during solidification and cooling. The cause of hot tearing is generally attributed to the development of thermally induced tensile stresses and strains in a casting as the molten metal contracts during solidification and solid state shrinkage. Submited paper consists of two parts. The first part introduces the reader to the phenomenon of hot tearing. The second part describes newly developed method for assessing hot tearing susceptibility of aluminium alloys, and also gives the results on hot tearing for various aluminium alloys.

  15. Diamond grooving of rapidly solidified optical aluminium

    NASA Astrophysics Data System (ADS)

    Abou-El-Hossein, Khaled; Hsu, Wei-Yao; Ghobashy, Sameh; Cheng, Yuan-Chieh; Mkoko, Zwelinzima

    2015-10-01

    Traditional optical aluminium grades such as Al 6061 are intensively used for making optical components for applications ranging from mould insert fabrication to laser machine making. However, because of their irregular microstructure and relative inhomogeneity of material properties at micro scale, traditional optical aluminium may exhibit some difficulties when ultra-high precision diamond turned. Inhomogeneity and micro-variation in the material properties combined with uneven and coarse microstructure may cause unacceptable surface finish and accelerated tool wear, especially in grooving operation when the diamond tool edge is fully immersed in the material surface. Recently, new grades of optical aluminium that are featured by their ultra-fine microstructure and improved material properties have been developed to overcome the problem of high tool wear rates. The new aluminium grades have been developed using rapid solidification process which results in extremely small grain sizes combined with improved mechanical properties. The current study is concerned with investigating the performance of single-point diamond turning when grooving two grades of rapidly solidified aluminium (RSA) grades: RSA905 which is a high-alloyed aluminium grade and RSA443 which has a high silicon content. In this study, two series of experiments employed to create radial microgrooves on the two RSA grades. The surface roughness obtained on the groove surface is measured when different combinations of cutting parameters are used. Cutting speed is varied while feed rate and depth of cut were kept constant. The results show that groove surface roughness produced on RSA443 is higher than that obtained on RSA905. Also, the paper reports on the effect of cutting speed on surface roughness for each RSA grade.

  16. Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

    NASA Technical Reports Server (NTRS)

    Mishina, H.; Buckley, D. H.

    1984-01-01

    Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

  17. The Construction and Characterization of Native Insulators on Gallium-Arsenide and Germanium

    NASA Astrophysics Data System (ADS)

    Crisman, Everett Earle

    Because of the excellent electrical properties that are obtained at the interfaces between silicon and thermally grown "native" oxides and nitrides, metal-insulator -semiconductor field effect transistors (MISFET's) have become the basic elements in fast high density computer memories as well as a primary structure for probing semiconductor surface charge transport phenomena. As silicon surface mobilities approach the bulk mobility a physical constraint is also being approached with respect to speed and density. Other semiconductors with higher bulk mobilities have, therefore, been suggested as replacements for silicon: gallium arsenide because of its very high room temperature electron mobility and germanium because it is one of the few well studied semiconductors with electron and hole mobilities of nearly the same magnitude. Unlike silicon, Ge and GaAs do not react readily wit oxygen or nitrogen to form uniform layers of interface passivating "native" insulators. In this study, techniques are reported for making native insulators on gallium arsenide and germanium. On gallium arsenide, the insulator is an oxide formed by a plasma oxidation technique (POX). On germanium, oxides have been formed by a high pressure oxidation technique (HPO) and these subsequently have been converted to nitrides (or oxynitride) by reaction with ammonia gas. Details of the formation techniques and basic characterization of the insulators and insulator/semiconductor interface electrical properties are present. Surface mobilities of about 20% of the bulk values were measured for MISFET's constructed on both GaAs and Ge using native oxides as the insulator. Fixed interface charge density in the low to mid 10('11)/cm('2) and midgap densities of states in the high 10('11)/cm('2)-eV range were also measured on similar MIS capacitors. On germanium nitride structures fixed surface charge density and interface density of states were both measured to be on the order of 10('10). Characterization

  18. Effect of aluminium chloride on human spermatozoa

    SciTech Connect

    Kaur, S.

    1988-03-01

    Aluminium (Al), which is the most prevalent metal in the earth's crust, has been implicated as an etiological factor in a variety of clinical disorders. Only recently Al has been discussed in the pathogenesis of the parenteral nutrition - associated liver disease. Included in this report are the preliminary findings on its effects on the reproductive functions of human beings.

  19. Molecular breeding of cereals for aluminium resistance

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Aluminium (Al3+) toxicity is the primary factor limiting crop production on acidic soils worldwide. In addition to an application of lime for soil amelioration, Al3+ resistant plant varieties have been deployed to raise productivity on such hostile soils. This has been possible due to the exploita...

  20. An ultrafast rechargeable aluminium-ion battery

    NASA Astrophysics Data System (ADS)

    Lin, Meng-Chang; Gong, Ming; Lu, Bingan; Wu, Yingpeng; Wang, Di-Yan; Guan, Mingyun; Angell, Michael; Chen, Changxin; Yang, Jiang; Hwang, Bing-Joe; Dai, Hongjie

    2015-04-01

    The development of new rechargeable battery systems could fuel various energy applications, from personal electronics to grid storage. Rechargeable aluminium-based batteries offer the possibilities of low cost and low flammability, together with three-electron-redox properties leading to high capacity. However, research efforts over the past 30 years have encountered numerous problems, such as cathode material disintegration, low cell discharge voltage (about 0.55 volts ref. 5), capacitive behaviour without discharge voltage plateaus (1.1-0.2 volts or 1.8-0.8 volts) and insufficient cycle life (less than 100 cycles) with rapid capacity decay (by 26-85 per cent over 100 cycles). Here we present a rechargeable aluminium battery with high-rate capability that uses an aluminium metal anode and a three-dimensional graphitic-foam cathode. The battery operates through the electrochemical deposition and dissolution of aluminium at the anode, and intercalation/de-intercalation of chloroaluminate anions in the graphite, using a non-flammable ionic liquid electrolyte. The cell exhibits well-defined discharge voltage plateaus near 2 volts, a specific capacity of about 70 mA h g-1 and a Coulombic efficiency of approximately 98 per cent. The cathode was found to enable fast anion diffusion and intercalation, affording charging times of around one minute with a current density of ~4,000 mA g-1 (equivalent to ~3,000 W kg-1), and to withstand more than 7,500 cycles without capacity decay.

  1. Analytical and experimental procedures for determining propagation characteristics of millimeter-wave gallium arsenide microstrip lines

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.

    1989-01-01

    In this report, a thorough analytical procedure is developed for evaluating the frequency-dependent loss characteristics and effective permittivity of microstrip lines. The technique is based on the measured reflection coefficient of microstrip resonator pairs. Experimental data, including quality factor Q, effective relative permittivity, and fringing for 50-omega lines on gallium arsenide (GaAs) from 26.5 to 40.0 GHz are presented. The effects of an imperfect open circuit, coupling losses, and loading of the resonant frequency are considered. A cosine-tapered ridge-guide text fixture is described. It was found to be well suited to the device characterization.

  2. Indium arsenide nanowire field-effect transistors for pH and biological sensing

    SciTech Connect

    Upadhyay, S.; Krogstrup, P.; Nygård, J.; Frederiksen, R.; Lloret, N.; Martinez, K. L.; De Vico, L.; Jensen, J. H.

    2014-05-19

    Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H{sup +} ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.

  3. Development of gallium arsenide high-speed, low-power serial parallel interface modules: Executive summary

    NASA Technical Reports Server (NTRS)

    1988-01-01

    Final report to NASA LeRC on the development of gallium arsenide (GaAS) high-speed, low power serial/parallel interface modules. The report discusses the development and test of a family of 16, 32 and 64 bit parallel to serial and serial to parallel integrated circuits using a self aligned gate MESFET technology developed at the Honeywell Sensors and Signal Processing Laboratory. Lab testing demonstrated 1.3 GHz clock rates at a power of 300 mW. This work was accomplished under contract number NAS3-24676.

  4. Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator

    NASA Astrophysics Data System (ADS)

    Takai, Mikio; Tanigawa, Takaho; Minamisono, Tadanori; Gamo, Kenji; Namba, Susumu

    1984-05-01

    Gallium arsenide (GaAs) layers have successfully been grown by molecular beam epitaxy on single crystalline germanium (Ge) islands, recrystallized by zone melting with SiO2 capping layers, on thermally-oxidized Si-wafers. The GaAs layers, grown on the single crystalline Ge islands, show smooth surfaces without any grain-boundaries, while those, grown on the Ge islands with grain-boundaries and on the SiO2, have grain-boundaries. The GaAs layers on the single crystalline Ge islands emit photoluminescence, the intensity of which is almost comparable to that of GaAs layers on bulk Ge crystals.

  5. Functional renormalization group study of an 8-band model for the iron arsenides

    NASA Astrophysics Data System (ADS)

    Honerkamp, Carsten; Lichtenstein, Julian; Maier, Stefan A.; Platt, Christian; Thomale, Ronny; Andersen, Ole Krogh; Boeri, Lilia

    2014-03-01

    We investigate the superconducting pairing instabilities of eight-band models for 1111 iron arsenides. Using a functional renormalization group treatment, we determine how the critical energy scale for superconductivity depends on the electronic band structure. Most importantly, if we vary the parameters from values corresponding to LaFeAsO to SmFeAsO, the pairing scale is strongly enhanced, in accordance with the experimental observation. We analyze the reasons for this trend and compare the results of the eight-band approach to those found using five-band models.

  6. On-orbit performance of LIPS gallium arsenide solar cell experiment

    NASA Technical Reports Server (NTRS)

    Bavaro, T.; Francis, R.; Pennell, M.

    1984-01-01

    Telemetry from the Living Plume Shield's gallium arsenide solar panel experiment was evaluated to determine degradation. The data were culled to preclude spurious results from possible shadowing or inaccurate measurements on a cold array. Two independent methods were then used to obtain the maximum power points and the various characteristics of the solar array. Fill factor, open circuit voltage, short circuit current, and series and shunt resistances were examined. The data analysis concluded that, to date, nearly all of the solar array degradation is due to the reduction in the short circuit current.

  7. Toxicity of dissolved and precipitated aluminium to marine diatoms.

    PubMed

    Gillmore, Megan L; Golding, Lisa A; Angel, Brad M; Adams, Merrin S; Jolley, Dianne F

    2016-05-01

    Localised aluminium contamination can lead to high concentrations in coastal waters, which have the potential for adverse effects on aquatic organisms. This research investigated the toxicity of 72-h exposures of aluminium to three marine diatoms (Ceratoneis closterium (formerly Nitzschia closterium), Minutocellus polymorphus and Phaeodactylum tricornutum) by measuring population growth rate inhibition and cell membrane damage (SYTOX Green) as endpoints. Toxicity was correlated to the time-averaged concentrations of different aluminium size-fractions, operationally defined as <0.025μm filtered, <0.45μm filtered (dissolved) and unfiltered (total) present in solution over the 72-h bioassay. The chronic population growth rate inhibition after aluminium exposure varied between diatom species. C. closterium was the most sensitive species (10% inhibition of growth rate (72-h IC10) of 80 (55-100)μg Al/L (95% confidence limits)) while M. polymorphus (540 (460-600)μg Al/L) and P. tricornutum (2100 (2000-2200)μg Al/L) were less sensitive (based on measured total aluminium). Dissolved aluminium was the primary contributor to toxicity in C. closterium, while a combination of dissolved and precipitated aluminium forms contributed to toxicity in M. polymorphus. In contrast, aluminium toxicity to the most tolerant diatom P. tricornutum was due predominantly to precipitated aluminium. Preliminary investigations revealed the sensitivity of C. closterium and M. polymorphus to aluminium was influenced by initial cell density with aluminium toxicity significantly (p<0.05) increasing with initial cell density from 10(3) to 10(5)cells/mL. No effects on plasma membrane permeability were observed for any of the three diatoms suggesting that mechanisms of aluminium toxicity to diatoms do not involve compromising the plasma membrane. These results indicate that marine diatoms have a broad range in sensitivity to aluminium with toxic mechanisms related to both dissolved and precipitated

  8. Ab initio study of the unusual thermal transport properties of boron arsenide and related materials

    NASA Astrophysics Data System (ADS)

    Broido, D. A.; Lindsay, L.; Reinecke, T. L.

    2013-12-01

    Recently, using a first principles approach, we predicted that zinc blende boron arsenide (BAs) will have an ultrahigh lattice thermal conductivity, κ, of over 2000 Wm-1K-1 at room temperature (RT), comparable to that of diamond. Here, we provide a detailed ab initio examination of phonon thermal transport in boron arsenide, contrasting its unconventional behavior with that of other related materials, including the zinc blende crystals boron nitride (BN), boron phosphide, boron antimonide, and gallium nitride (GaN). The unusual vibrational properties of BAs contribute to its weak phonon-phonon scattering and phonon-isotope scattering, which are responsible for its exceptionally high κ. The thermal conductivity of BAs has contributions from phonons with anomalously large mean free paths (˜2 μm), two to three times those of diamond and BN. This makes κ in BAs sensitive to phonon scattering from crystal boundaries. An order of magnitude smaller RT thermal conductivity in a similar material, zinc blende GaN, is connected to more separated acoustic phonon branches, larger anharmonic force constants, and a large isotope mixture on the heavy rather than the light constituent atom. The striking difference in κ for BAs and GaN demonstrates the importance of using a microscopic first principles thermal transport approach for calculating κ. BAs also has an advantageous RT coefficient of thermal expansion, which, combined with the high κ value, suggests that it is a promising material for use in thermal management applications.

  9. Optimal power settings of aluminum gallium arsenide lasers in caries inhibition — An in vitro study

    PubMed Central

    Sharma, Sonali; Hegde, Mithra N; Sadananda, Vandana; Mathews, Blessen

    2016-01-01

    Context: Incipient carious lesions are characterized by subsurface dissolution due to more fluoride ions in the 50-100 microns of the tooth's outer surface. Aims: To determine an optimal power setting for 810 nm aluminum gallium arsenide laser for caries inhibition. Materials and Methods: Fifty-four caries-free extracted teeth were sectioned mesiodistally. The samples were divided into 18 groups for each power setting being evaluated. Each group had six samples. The laser used is 810 nm aluminum gallium arsenide laser with power setting from 0.1 watts to 5 watts. Laser fluorescence based device was used to evaluate the effect of irradiation. Statistical Analysis Used: Paired “t” test, one-way analysis of variance (ANOVA), Tukey's post hoc test, and the Pearson's correlation test. Results: The paired t-test showed that there is minimum divergence from the control for 3.5 watts. Tukey's post hoc test also showed statistically significantly results for 3.5 watts. The Pearson's correlation test showed that there was negative correlation between the watts and irradiation. Conclusions: The power setting that gave statistically significant results was 3.5 watts. PMID:27099427

  10. Liquid immiscibility between arsenide and sulfide melts: evidence from a LA-ICP-MS study in magmatic deposits at Serranía de Ronda (Spain)

    NASA Astrophysics Data System (ADS)

    Piña, R.; Gervilla, F.; Barnes, S.-J.; Ortega, L.; Lunar, R.

    2015-03-01

    The chromite-Ni arsenide (Cr-Ni-As) and sulfide-graphite (S-G) deposits from the Serranía de Ronda (Málaga, South Spain) contain an arsenide assemblage (nickeline, maucherite and nickeliferous löllingite) that has been interpreted to represent an arsenide melt and a sulfide-graphite assemblage (pyrrhotite, pentlandite, chalcopyrite and graphite) that has been interpreted to represent a sulfide melt, both of which have been interpreted to have segregated as immiscible liquids from an arsenic-rich sulfide melt. We have determined the platinum-group element (PGE), Au, Ag, Se, Sb, Bi and Te contents of the arsenide and sulfide assemblages using laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) to establish their partitioning behaviour during the immiscibility of an arsenide melt from a sulfide melt. Previous experimental work has shown that PGE partition more strongly into arsenide melts than into sulfide melts and our results fit with this observation. Arsenide minerals are enriched in all PGE, but especially in elements with the strongest affinity for the arsenide melt, including Ir, Rh and Pt. In contrast and also in agreement with previous studies, Se and Ag partition preferentially into the sulfide assemblage. The PGE-depleted nature of sulfides in the S-G deposits along with the discordant morphologies of the bodies suggest that these sulfides are not mantle sulfides, but that they represent the crystallization product of a PGE-depleted sulfide melt due to the sequestering of PGE by an arsenide melt.

  11. Synthesis and characterization of transition metal arsenide nanocrystals and the metastability and magneto-structural phase transition behavior of manganese arsenide nanocrystals

    NASA Astrophysics Data System (ADS)

    Zhang, Yanhua

    This dissertation study focuses on (1) probing the magneto-structural phase transformation in nanoscale MnAs; (2) evaluation of the size-dependent phase stability of type-B MnAs (prepared by rapid injection); and (3) developing a general synthetic method for transition metal arsenide nanoparticles. Discrete MnAs nanoparticles that adopt different structures at room temperature (type-A, α-structure and type-B, beta-structure) have been prepared by the solution-phase arrested precipitation method. Atomic pair distribution and Rietveld refinement were employed on synchrotron data to explore the structural transitions of the bulk and nanoparticle samples, and these results were compared to AC magnetic susceptibility measurements of the samples. The results confirm that the structural transition and the magnetic transition are highly correlated in bulk MnAs and suggest that for type-A MnAs nanoparticles, there is a similar magneto-structural phase transition occurring in the same temperature region as that for bulk MnAs. However, for type-B MnAs nanoparticles, there is no magneto-structural phase transition, consistent with that type-B MnAs nanoparticles being kinetically trapped in the beta-structure. Type-B MnAs nanoparticles adopting the beta-strucuture undergo a transformation from beta to α upon cooling. Temperature dependent XRD studies and magnetic measurements suggest that the TP for α → beta conversion is suppressed to lower temperatures relative to bulk and type-A MnAs nanoparticles and that the transformation is reversible but has an enhanced hysteresis, which results in a large coexistence temperature range for the α and beta structure. The transformation temperature correlated with the compression of the lattice parameters of the type-B MnAs nanoparticles due to the decrease in the particle size or the presence of chemical doping, or both. A new general synthetic method for transition metal arsenide (Ni 11As8, FeAs and CoAs) nanocrystals synthesis was

  12. Bladder cancer in the aluminium industry.

    PubMed

    Thériault, G; Tremblay, C; Cordier, S; Gingras, S

    1984-04-28

    The incidence of bladder cancer is unusually high in aluminium smelter workers. An epidemiological study showed that workers in Soderberg potrooms are at highest risk for bladder cancer, the adjusted overall relative risk being 2.39 (1.34-4.28). Exposure to polycyclic aromatic hydrocarbons, of which benz(a)pyrene (BaP) served as an indicator, seems to be the causative factor. The relative risk was evaluated at 12.38 for workers with 20 or more equivalent years of BaP exposure. Cigarette smoking contributed significantly to the appearance of bladder cancer in the population studied. There is a synergistic effect when cigarette smoking and BaP exposure are combined; the numbers in our population are too small to determine whether this interaction effect is multiplicative or additive. It is concluded that bladder cancer is associated with aluminium smelting (primarily with the Soderberg process). PMID:6143877

  13. An ultrafast rechargeable aluminium-ion battery.

    PubMed

    Lin, Meng-Chang; Gong, Ming; Lu, Bingan; Wu, Yingpeng; Wang, Di-Yan; Guan, Mingyun; Angell, Michael; Chen, Changxin; Yang, Jiang; Hwang, Bing-Joe; Dai, Hongjie

    2015-04-16

    The development of new rechargeable battery systems could fuel various energy applications, from personal electronics to grid storage. Rechargeable aluminium-based batteries offer the possibilities of low cost and low flammability, together with three-electron-redox properties leading to high capacity. However, research efforts over the past 30 years have encountered numerous problems, such as cathode material disintegration, low cell discharge voltage (about 0.55 volts; ref. 5), capacitive behaviour without discharge voltage plateaus (1.1-0.2 volts or 1.8-0.8 volts) and insufficient cycle life (less than 100 cycles) with rapid capacity decay (by 26-85 per cent over 100 cycles). Here we present a rechargeable aluminium battery with high-rate capability that uses an aluminium metal anode and a three-dimensional graphitic-foam cathode. The battery operates through the electrochemical deposition and dissolution of aluminium at the anode, and intercalation/de-intercalation of chloroaluminate anions in the graphite, using a non-flammable ionic liquid electrolyte. The cell exhibits well-defined discharge voltage plateaus near 2 volts, a specific capacity of about 70 mA h g(-1) and a Coulombic efficiency of approximately 98 per cent. The cathode was found to enable fast anion diffusion and intercalation, affording charging times of around one minute with a current density of ~4,000 mA g(-1) (equivalent to ~3,000 W kg(-1)), and to withstand more than 7,500 cycles without capacity decay. PMID:25849777

  14. Feet sunk in molten aluminium: The burn and its prevention.

    PubMed

    Alonso-Peña, David; Arnáiz-García, María Elena; Valero-Gasalla, Javier Luis; Arnáiz-García, Ana María; Campillo-Campaña, Ramón; Alonso-Peña, Javier; González-Santos, Jose María; Fernández-Díaz, Alaska Leonor; Arnáiz, Javier

    2015-08-01

    Nowadays, despite improvements in safety rules and inspections in the metal industry, foundry workers are not free from burn accidents. Injuries caused by molten metals include burns secondary to molten iron, aluminium, zinc, copper, brass, bronze, manganese, lead and steel. Molten aluminium is one of the most common causative agents of burns (60%); however, only a few publications exist concerning injuries from molten aluminium. The main mechanisms of lesion from molten aluminium include direct contact of the molten metal with the skin or through safety apparel, or when the metal splash burns through the pants and rolls downward along the leg. Herein, we report three cases of deep dermal burns after 'soaking' the foot in liquid aluminium and its evolutive features. This paper aims to show our experience in the management of burns due to molten aluminium. We describe the current management principles and the key features of injury prevention. PMID:25687835

  15. Plasmonic enhancement of photoluminescence from aluminium nitride

    NASA Astrophysics Data System (ADS)

    Flynn, Chris; Stewart, Matthew

    2016-03-01

    Aluminium nitride (AlN) films were grown on c-plane sapphire wafers by molecular beam epitaxy (MBE) under aluminium-rich conditions. The excess aluminium (Al) accumulated on the surface of the films as micro-scale droplets 1-10 μm in size, and as Al nanoparticles with diameters in the range 10-110 nm. Photoluminescence (PL) measurements were performed on the AlN samples using a 193 nm Excimer laser as the excitation source. Prior to PL measurements the wafers were cleaved in half. One half of each wafer was submitted to a 10 min treatment in H3PO4 heated to 70 °C to remove the excess Al from the film surface. The remaining half was left in the as-deposited condition. The mean intensities of the near-band-edge PL peaks of the as-deposited samples were 2.0-3.4 times higher compared to the samples subjected to the H3PO4 Al-removal treatment. This observation motivated calculations to determine the optimal Al surface nanosphere size for plasmonic enhancement of PL from AlN. The PL enhancement was found to peak for an Al nanosphere radius of 15 nm, which is within the range of the experimentally-observed Al nanoparticle sizes.

  16. Improving the Crashworthiness of Aluminium Rail Vehicles

    NASA Astrophysics Data System (ADS)

    Zangani, Donato; Robinson, Mark; Kotsikos, George

    An experimental and modelling programme of work have been undertaken to predict the performance of aluminium welds in rail vehicles under highly dynamic loading conditions and provide design guidelines to reduce the likelihood of the occurrence of weld unzipping. Modelling of weld unzipping in large rail structures is a challenging task since it requires to deal with material instability, to take into account the uncertainties in material parameters and to address the problem of mesh resolution which together pose severe challenges to computability. The proposed methodology to the prediction of weld failure is based on the validation of the numerical models through correlation with laboratory scale tearing tests. The tearing tests were conducted on samples taken from real rail extrusions with the purpose of obtaining the failure parameters under dynamic loading and understanding the effect of weld material composition on joint behaviour. The validated material models were used to construct a FEA simulation of the collision of an aluminium rail car and investigate the effect of both joint geometry and welding techniques on the failure mechanism. Comparisons of the model with the failures observed in an aluminium rail vehicle that was involved in a high speed collision, have shown that it is possible to model the phenomenon of weld unzipping with good accuracy. The numerical models have also been used as a tool for the optimisation of joint design to improve crashworthiness.

  17. Inhalation exposure in secondary aluminium smelting.

    PubMed

    Healy, J; Bradley, S D; Northage, C; Scobbie, E

    2001-04-01

    Inhalation exposure at seven UK secondary aluminium smelters was investigated to quantify the main exposures and identify their sources. The substances monitored were gases (carbon monoxide, hydrogen sulphide and nitrogen dioxide), total inhalable dust, metals, ammonia, polycyclic aromatic hydrocarbons (PAHs), particulate fluoride salts and acids. The results showed that people were exposed to a range of workplace air pollutants. Personal exposure results for total inhalable dust were between 700 and 5600 microg x m(-3) and the maximum personal exposure result for particulate fluoride salts was 690 microg x m(-3) (as F). The maximum aluminium, total PAH and lead personal exposure results were 900, 19 and 18 microg x m(-3) respectively. The average proportion of aluminium in total inhalable dust samples was 13% and rotary furnace processes generated the most dust. Particulate fluoride salt exposure was more widespread than hydrofluoric acid exposure. The source of the salt exposure was fluoride containing fluxes. The lead exposure source was lead solder contamination in the furnace charge. PMID:11295145

  18. Thermodynamic properties of uranium in gallium-aluminium based alloys

    NASA Astrophysics Data System (ADS)

    Volkovich, V. A.; Maltsev, D. S.; Yamshchikov, L. F.; Chukin, A. V.; Smolenski, V. V.; Novoselova, A. V.; Osipenko, A. G.

    2015-10-01

    Activity, activity coefficients and solubility of uranium was determined in gallium-aluminium alloys containing 1.6 (eutectic), 5 and 20 wt.% aluminium. Additionally, activity of uranium was determined in aluminium and Ga-Al alloys containing 0.014-20 wt.% Al. Experiments were performed up to 1073 K. Intermetallic compounds formed in the alloys were characterized by X-ray diffraction. Partial and excess thermodynamic functions of U in the studied alloys were calculated.

  19. Thermodynamic properties of uranium in gallium-aluminium based alloys

    NASA Astrophysics Data System (ADS)

    Volkovich, V. A.; Maltsev, D. S.; Yamshchikov, L. F.; Chukin, A. V.; Smolenski, V. V.; Novoselova, A. V.; Osipenko, A. G.

    2015-10-01

    Activity, activity coefficients and solubility of uranium was determined in gallium-aluminium alloys containing 1.6 (eutectic), 5 and 20 wt.% aluminium. Additionally, activity of uranium was determined in aluminium and Ga-Al alloys containing 0.014-20 wt.% Al. Experiments were performed up to 1073 K. Intermetallic compounds formed in the alloys were characterized by X-ray diffraction. Partial and excess thermodynamic functions of U in the studied alloys were calculated.

  20. The aluminium content of infant formulas remains too high

    PubMed Central

    2013-01-01

    Background Recent research published in this journal highlighted the issue of the high content of aluminium in infant formulas. The expectation was that the findings would serve as a catalyst for manufacturers to address a significant problem of these, often necessary, components of infant nutrition. It is critically important that parents and other users have confidence in the safety of infant formulas and that they have reliable information to use in choosing a product with a lower content of aluminium. Herein, we have significantly extended the scope of the previous research and the aluminium content of 30 of the most widely available and often used infant formulas has been measured. Methods Both ready-to-drink milks and milk powders were subjected to microwave digestion in the presence of 15.8 M HNO3 and 30% w/v H2O2 and the aluminium content of the digests was measured by TH GFAAS. Results Both ready-to-drink milks and milk powders were contaminated with aluminium. The concentration of aluminium across all milk products ranged from ca 100 to 430 μg/L. The concentration of aluminium in two soya-based milk products was 656 and 756 μg/L. The intake of aluminium from non-soya-based infant formulas varied from ca 100 to 300 μg per day. For soya-based milks it could be as high as 700 μg per day. Conclusions All 30 infant formulas were contaminated with aluminium. There was no clear evidence that subsequent to the problem of aluminium being highlighted in a previous publication in this journal that contamination had been addressed and reduced. It is the opinion of the authors that regulatory and other non-voluntary methods are now required to reduce the aluminium content of infant formulas and thereby protect infants from chronic exposure to dietary aluminium. PMID:24103160

  1. Production of aluminium metal matrix composites by liquid processing methods

    NASA Astrophysics Data System (ADS)

    Hynes, N. Rajesh Jesudoss; Kumar, R.; Tharmaraj, R.; Velu, P. Shenbaga

    2016-05-01

    Owing to high strength to low weight ratio, Aluminium matrix composites are widely used in diverse applications of many industries. This lucrative property is achieved by reinforcing the brittle ceramic particles in the aluminium matrix. Aluminium matrix composites are produced by liquid processing methods and solid processing methods. Nevertheless, liquidprocessing techniques stand out because of its simplicity and its suitability for mass production. In this review article, the production of aluminium matrix composites by different liquid processing technique is discussed and a comparative study is carried out.

  2. Cold-impregnated aluminium. A new source of nickel exposure.

    PubMed

    Lidén, C

    1994-07-01

    A new technique for finishing anodized aluminium was introduced during the 1980s--cold impregnation with nickel. Nickel is available on the surface of cold-impregnated aluminium, as shown by the dimethylglyoxime test. Chemical analysis with EDXA showed that nickel was in the form of NiSO4. A case of work-related allergic contact dermatitis in an engraver with nickel allergy is reported. It transpired that the patient was exposed to nickel in connection with aluminium. It is concluded that cold-impregnated aluminium is a new source of nickel exposure, probably previously unknown to dermatologists. PMID:7924288

  3. Effects of aluminium surface morphology and chemical modification on wettability

    NASA Astrophysics Data System (ADS)

    Rahimi, M.; Fojan, P.; Gurevich, L.; Afshari, A.

    2014-03-01

    Aluminium alloys are some of the predominant metals in industrial applications such as production of heat exchangers, heat pumps. They have high heat conductivity coupled with a low specific weight. In cold working conditions, there is a risk of frost formation on the surface of aluminium in the presence of water vapour, which can lead to the deterioration of equipment performance. This work addresses the methods of surface modification of aluminium and their effect of the underlying surface morphology and wettability, which are the important parameters for frost formation. Three groups of real-life aluminium surfaces of different morphology: unpolished aluminium, polished aluminium, and aluminium foil, were subjected to surface modification procedures which involved the formation of a layer of hydrophilic hyperbranched polyethyleneglycol via in situ polymerization, molecular vapour deposition of a monolayer of fluorinated silane, and a combination of those. The effect of these surface modification techniques on roughness and wettability of the aluminium surfaces was elucidated by ellipsometry, contact angle measurements and atomic force microscopy. We demonstrated that by employing different types of surface modifications the contact angle of water droplets on aluminium samples can be varied from 12° to more than 120°. A crossover from Cassie-Baxter to Wenzel regime upon changing the surface roughness was also observed.

  4. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    NASA Technical Reports Server (NTRS)

    Gaddy, Edward M.

    1995-01-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

  5. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    SciTech Connect

    Gaddy, E.M.

    1995-10-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty.

  6. Gold/niobium thin film metallizations for gallium arsenide devices and circuits

    NASA Astrophysics Data System (ADS)

    Esser, Robert Henry

    As the information age opens, the demand for high performance electronics is increasing exponentially. High-speed communications devices and equipment are at the heart of this expansion. Gallium arsenide field effect transistors are the building blocks for those devices. GaAs FETs provide operation at speeds more than six times that of conventional silicon devices. There is a need to develop and expand the materials knowledge base in all aspects to the fabrication of III/V semiconductors. Of particular interest is developing a metallization for gallium arsenide circuits and devices that will provide a high quality diffusion barrier. The metallization must provide adhesion to the GaAs surface. It must be thermally and chemically stable. It must be compatible with the other materials encountered in semiconductor processing and packaging. A niobium/gold thin film system for first level metallization on GaAs is proposed and examined. Niobium displays good adhesion to other semiconductor substrates such as Si, SiO2, and diamond. It is corrosion resistant. Niobium has the third lowest resistance of the refractory metals. Finally, the melting point of TM = 2467°C suggests that niobium will have high temperature stability and low interdiffusion coefficients. The kinetics of Nb/Au thin films was examined using sheet resistance measurements, X-Ray diffraction and Auger Electron Spectroscopy depth profiling techniques. The data is analyzed using the Matano method and a technique proposed by Zhang and Wong to take into account the fort-nation of an intermediate intermetallic phase. The relevant diffusion coefficients for two kinetics regimes are presented. Finally, niobium/gold was used as a Schottky contact on GaAs and subjected to an anneal study. It was found that the series resistance of Schottky diodes decreased with a 1 hour anneal at 250°C to 12.5O, and remained stable for temperatures of 250°C for 672 hours. It was found that the series resistance degraded

  7. A Study of Hydrogen Anion Substitution in 1111-type Iron Arsenides

    NASA Astrophysics Data System (ADS)

    Hosono, Hideo

    2014-03-01

    Hydrogen is the simplest bipolar element and its valence state can be controlled from +1 to -1. We have synthesized the 1111-type iron arsenides CaFeAsH and LnFeAsO1 -xHx (Ln = lanthanide; 0 <= x <= 0.5) with the ZrCuSiAs type structure by a high-pressure synthesis method. The position and valence state of the substituted H were determined by neutron diffraction and density functional theory calculations. The close similarity in the structural and electrical properties of CaFeAsH and CaFeAsF indicated the formation of the hydride ion (H -) , which is isovalent with the fluoride ion (F -) , in the 1111-type iron arsenides. When some of the O2 - ions in LnFeAsO are replaced by H -, superconductivity is induced by electron doping to the FeAs-layer to maintain charge neutrality. Since the substitution limit of hydrogen in LnFeAsO (x ~ 0.5) is much higher than that of fluorine (x ~ 0.2), the hydrogen substitution technique provides an effective pathway for high-density electron-doping, making it possible to draw the complete electronic phase diagram of LnFeAsO. The x-T diagrams of LnFeAsO1-xHx (Ln = La, Ce, Sm, Gd) have a wide superconducting (SC) region spanning the range x = 0.04 to 0.4, which is far from the parent antiferromagnetic region near x = 0.0. For LaFeAsO1-xHx, another SC dome region was found in the range x = ~ 0.2 to ~ 0.5 with a maximum Tc = 36 K, in addition to a conventional SC dome located at x ~ 0.08 with maximum Tc = 29 K. Density functional theory calculations performed for LaFeAsO1-xHx using virtual crystal approximation indicated that the newly observed Tc is correlated with the appearance of degeneration of the Fe 3d bands (dxy, dyz and dzx), which is caused not only by regularization of the tetrahedral shape of FeAs4 due to chemical pressure effects but also by selective band occupation with doped electrons. Very recently, a new AFM phase was found around x =0.5, suggesting that the double dome Tc structure reflects the presence of two AFM

  8. Cost Trade Between Multi-Junction, Gallium Arsenide, and Silicon Solar Cells

    NASA Technical Reports Server (NTRS)

    Gaddy, Edward M.

    1995-01-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar 2 cells and cost approximately five times as much per unit power at the cell level. A trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552,000 dollars per kilogram to launch and suppon3science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. ff the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and supported at a price of approximately $58,000 per kilogram. The trade shows that even if the multi-junction cells are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $180,000 per kilogram. This is still much less than the original $552,000 per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater

  9. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    NASA Astrophysics Data System (ADS)

    Gaddy, Edward M.

    1995-10-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

  10. Electrodeposition of aluminium, aluminium/magnesium alloys, and magnesium from organometallic electrolytes

    SciTech Connect

    Mayer, A.

    1988-01-01

    The electrodeposition of aluminum, magnesium, and the combination of these metals from nonaqueous media is discussed. Plating baths for depositing Al/Mg alloys or for plating essentially pure Mg were developed. These solutions contain alkali meal fluoride or quaternary ammonium halide/aluminium alkyl complexes and dialkyl magnesium dissolved in aromatic hydrocarbons. Alloy deposits over the whole composition range can be plated from these solutions by varying the relative quantities of the aluminium and magnesium alkyls and by changing the bath-operating parameters. 18 refs., 4 figs.

  11. Carrier depletion and electrical optimization of gallium arsenide plasmonic solar cell with a rear metallic grating

    NASA Astrophysics Data System (ADS)

    Shang, Aixue; Li, Xiaofeng

    2015-02-01

    Plasmonic nanostructures have been extensively considered for photovoltaics due to the outstanding light-trapping capability; however, the intrinsic processes of carrier transport, recombination and collection have seldom been concerned. We report a complete optoelectronic investigation for plasmonic gallium arsenide solar cells (SCs) with a rear silver grating, by especially quantifying the plasmonics-induced photocurrent loss. It is found that, although the plasmonic design shows indeed much improved output photocurrent, its potential in improving the performance of SCs has not been fully exploited since a lot of energy has been wasted in the form of carrier depletion. A further design which electrically separates the plasmonic nanostructure from the core PN junction is verified to be an effective solution in improving the electrical performance of the SCs. The complete optoelectronic consideration is expected to advance the design of plasmonic SCs for thin-film and high-efficiency.

  12. Single event upsets in gallium arsenide pseudo-complementary MESFET logic

    SciTech Connect

    Fouts, D.J.; Wolfe, K.; Van Dyk, S.E.; Weatherford, T.R.; McMorrow, D.; Melinger, J.S.; Tran, L.H.; Campbell, A.B.

    1995-12-01

    An introduction to gallium arsenide (GaAs) Pseudo-Complementary MESFET Logic (PCML) circuits is presented. PCML was developed to reduce the sensitivity of high-speed GaAs logic to radiation-induced single event upsets (SEUs). Experiments for testing the single-event upset (SEU) sensitivity of GaAs PCML integrated circuits (ICs) are described. The results of the experiments are analyzed. This new type of high-speed, low-power, GaAs logic provides decreased sensitivity to SEUs compared to more traditional circuit designs such as Directly-Coupled FET Logic (DCFL). PCML is fully compatible with existing GaAs E/D MESFET fabrication processes, such as those commonly used to make DCFL.

  13. Thermal Conductivity and Seebeck Coefficients of Icosahedral Boron Arsenide Films on Silicon Carbide

    SciTech Connect

    Y Gong; Y Zhang; M Dudley; Y Zhang; J Edgar; P Heard; M Kuball

    2011-12-31

    The thermal conductivity of icosahedral boron arsenide (B{sub 12}As{sub 2}) films grown on (0001) 6H-SiC substrates by chemical vapor deposition was studied by the 3{omega} technique. The room temperature thermal conductivity decreased from 27.0 to 15.3 W/m K as the growth temperature was decreased from 1450 to 1275 C. This is mainly attributed to the differences in the impurity concentration and microstructure, determined from secondary ion mass spectrometry and high resolution transmission electron microscopy, respectively. Callaway's theory was applied to calculate the temperature-dependent thermal conductivity, and the results are in good agreement with the experimental data. Seebeck coefficients were determined as 107 {micro}V/K and 136 {micro}V/K for samples grown at 1350 C with AsH{sub 3}/B{sub 2}H{sub 6} flow ratio equals to 1:1 and 3:5, respectively.

  14. NMR investigation of iron-selenide and iron-arsenide high Tc superconductors

    NASA Astrophysics Data System (ADS)

    Imai, Takashi

    2012-02-01

    We have investigated the electronic, magnetic, and superconducting properties of the iron-selenide high Tc superconductor KxFe2-ySez (Tc=33 K) with ^77Se NMR [1]. We will compare the results with those observed for FeSe in ambient and applied pressures (Tc>9 K) [2], and with iron-arsenides [3]. Similarities and dissimilarities will be pointed out, with primary focus on the anomalous normal state properties. Our latest work on KxFe2-ySez was carried out in collaboration with D. Torchetti, M. Fu, D. Christensen, K. Nelson (McMaster), H. Lei, and C. Petrovic (Brookhaven National Lab).[4pt] [1] D. Torchetti et al., PR B83, 104508 (2011).[0pt] [2] T. Imai et al. PRL 102, 177005 (2009).[0pt] [3] F.L. Ning et al., PRL 104, 037001 (2010); JPSJ 78, 103711 (2009).

  15. Lattice distortion in single crystal rare-earth arsenide/GaAs nanocomposites

    SciTech Connect

    Young, A. J.; Schultz, B. D.; Palmstrøm, C. J.

    2014-02-17

    Epitaxial single crystal nanocomposites comprised of rare-earth arsenide nanoparticles embedded in GaAs (001) layers produce a larger change in lattice parameter than expected from the lattice parameters of relaxed films. Despite similar cubic structures and lattice parameters, elongation of the interfacial bond length between the two materials induces additional strain causing an expansion in the nanocomposite lattice. The interface bond length is material dependent with an average atomic layer spacing at the ErAs:GaAs interface of 1.9 Å while the spacing at the ScAs:GaAs interface is only 1.4 Å. Implications for lattice matching various single crystal epitaxial nanostructures in semiconductors are discussed.

  16. Growth and characterization of thin film zinc-silicon-arsenide for solar cells

    NASA Astrophysics Data System (ADS)

    Igwe, G. A.

    Conditions for good morphology synthesis and epilayer growth of thin film Zinc Silicon Arsenide (ZnSiAs2) by the metallorganic chemical vapor deposition (MO-CVD) technique have been investigated. Structural, electrical and optical properties of such ZnSiAs2 layers were studied using several diverse methods including electron microprobe, X-ray diffraction, auger electron spectroscopy, secondary ion mass spectrometry, electron beam induced currents, photovoltaic spectral response, current-voltage and capacitance-voltage characteristics of heterostructures. Many problems generally associated with heteroepitaxial growth of semiconducting materials were much in evidence. In particular, interfacial diffusion resulting in autodoping of both substrate and the grown epilayer precluded rectifying heterojunction formation for ZnSiAs2 layers grown on Ge, GaAs or Si substrate. The lattice mismatch of about three percent between silicon and ZnSiAs2 provided additional problems of microcracks in and nonadherence of the epilayers.

  17. Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions

    SciTech Connect

    Zhang, Xueqiang; Lamere, Edward; Ptasinska, Sylwia; Liu, Xinyu; Furdyna, Jacek K.

    2014-05-05

    The manipulation of semiconductor surfaces by tuning their electronic properties and surface chemistry is an essential ingredient for key applications in areas such as electronics, sensors, and photovoltaic devices. Here, in-situ surface reactions on gallium arsenide (GaAs) are monitored for two morphologies: a simple planar crystalline surface with (100) orientation and an ensemble of GaAs nanowires, both exposed to oxygen environment. A variety of oxide surface species, with a significant enhancement in oxidation states in the case of nanowires, are detected via near ambient pressure X-ray photoelectron spectroscopy. This enhancement in oxidation of GaAs nanowires is due to their higher surface area and the existence of more active sites for O{sub 2} dissociation.

  18. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    SciTech Connect

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  19. A I-V analysis of irradiated Gallium Arsenide solar cells

    NASA Technical Reports Server (NTRS)

    Heulenberg, A.; Maurer, R. H.; Kinnison, J. D.

    1991-01-01

    A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium arsenide (GaAs) solar cells irradiated with 1-MeV electrons and 10-MeV protons. It was concluded that junction regions (J sub r) dominate nearly all GaAs cells tested, except for irradiated Mitsubishi cells, which appear to have a different doping profile. Irradiation maintains or increases the dominance by J sub r. Proton irradiation increases J sub r more than does electron irradiation. The U.S. cells were optimized for beginning of life (BOL) and the Japanese for end of life (EOL). I-V analysis indicates ways of improving both the BOL and EOL performance of GaAs solar cells.

  20. Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

    SciTech Connect

    Muhammad, R.; Ahamad, R.; Ibrahim, Z.; Othaman, Z.

    2014-03-05

    Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

  1. Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures.

    PubMed

    Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J; Pfeiffer, Loren N; West, Ken W; Rokhinson, Leonid P

    2015-01-01

    Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor-superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields. PMID:26067452

  2. Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

    NASA Astrophysics Data System (ADS)

    Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J.; Pfeiffer, Loren N.; West, Ken W.; Rokhinson, Leonid P.

    2015-06-01

    Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor-superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields.

  3. Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

    PubMed Central

    Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J.; Pfeiffer, Loren N.; West, Ken W.; Rokhinson, Leonid P.

    2015-01-01

    Search for Majorana fermions renewed interest in semiconductor–superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor–superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields. PMID:26067452

  4. Methods for forming group III-V arsenide-nitride semiconductor materials

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  5. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  6. One-dimensional behavior and high thermoelectric power factor in thin indium arsenide nanowires

    SciTech Connect

    Mensch, P.; Karg, S. Schmidt, V.; Gotsmann, B.; Schmid, H.; Riel, H.

    2015-03-02

    Electrical conductivity and Seebeck coefficient of quasi-one-dimensional indium arsenide (InAs) nanowires with 20 nm diameter are investigated. The carrier concentration of the passivated nanowires was modulated by a gate electrode. A thermoelectric power factor of 1.7 × 10{sup −3} W/m K{sup 2} was measured at room temperature. This value is at least as high as in bulk-InAs and exceeds by far typical values of thicker InAs nanowires with three-dimensional properties. The interpretation of the experimental results in terms of power-factor enhancement by one-dimensionality is supported by model calculations using the Boltzmann transport formalism.

  7. Commercial and industrial applications of indium gallium arsenide near-infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Cohen, Marshall J.; Ettenberg, Martin H.; Lange, Michael J.; Olsen, Gregory H.

    1999-07-01

    Sensors Unlimited, Inc. has developed focal pane arrays (FPAs) fabricated with indium gallium arsenide (InGaAs) photodiode arrays and silicon CMOS readout integrated circuits. These devices are readily available in a wide variety of formats suitable for commercial and industrial applications. InGaAs FPAs are sensitive to the near IR, operate without cooling, and come in both 2D formats and 1D formats. 1D InGaAs FPAs are used as both spectroscopic detectors and line scan imagers. Key applications include miniature spectrometers used for wavelength control and monitoring of WDM laser sources, octane determination, the sorting o plastics during recycling, and web process control. 2D InGaAs FPAs find use in applications such as laser beam profiling, visualization of 'clear' ice on aircraft and roadways, and industrial thermal imaging.

  8. Development of a dome Fresnel lens/gallium arsenide photovoltaic concentrator for space applications

    NASA Technical Reports Server (NTRS)

    O'Neill, Mark J.; Piszczor, Michael F.

    1987-01-01

    A novel photovoltaic concentrator system is currently being developed. Phase I of the program, completed in late 1986, produced a conceptual design for the concentrator system, including an array weight and performance estimates based on optical, electrical, and thermal analyses. Phase II of the program, just underway, concerns the fabrication and testing of prototype concentrator panels of the design. The concentrator system uses dome Fresnel lenses for optical concentration; gallium arsenide concentrator cells for power generation; prismatic cell covers to eliminate gridline obscuration losses; a backplane radiator for heat rejection; and a honeycomb structure for the deployable panel assembly. The conceptual design of the system, its anticipated performance, and its estimated weight are reported.

  9. Gallium arsenide quantum well-based far infrared array radiometric imager

    NASA Technical Reports Server (NTRS)

    Forrest, Kathrine A.; Jhabvala, Murzy D.

    1991-01-01

    We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

  10. Characterization of solar cells for space applications. Volume 13: Electrical characteristics of Hughes LPE gallium arsenide solar cells as a function of intensity and temperature

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.; Beckert, D. M.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

    1980-01-01

    Electrical characteristics of Hughes Liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature.

  11. Analysis of Nitrogen Incorporation in Group III-Nitride-Arsenide Materials Using a Magnetic Sector Secondary-Ion Mass Spectrometry (SIMS) Instrument: Preprint

    SciTech Connect

    Reedy, R. C.; Geisz, J. F.; Kurtz, S. R.; Adams, R. O.; Perkins, C. L.

    2001-10-01

    Presented at the 2001 NCPV Program Review Meeting: Group III-nitride-arsenide materials were studied by SIMS, XRD, and Profiler to determine small amounts of nitrogen that can lower the alloys bandgap significantly.

  12. Inelastic neutron scattering studies of the spin and lattice dynamics in iron arsenide compounds.

    SciTech Connect

    Osborn, R.; Rosenkranz, S.; Goremychkin, E. A.; Christianson, A. D.

    2009-03-20

    Although neutrons do not couple directly to the superconducting order parameter, they have nevertheless played an important role in advancing our understanding of the pairing mechanism and the symmetry of the superconducting energy gap in the iron arsenide compounds. Measurements of the spin and lattice dynamics have been performed on non-superconducting 'parent' compounds based on the LaFeAsO ('1111') and BaFe{sub 2}As{sub 2} ('122') crystal structures, and on electron and hole-doped superconducting compounds, using both polycrystalline and single crystal samples. Neutron measurements of the phonon density-of-state, subsequently supported by single crystal inelastic X-ray scattering, are in good agreement with ab initio calculations, provided the magnetism of the iron atoms is taken into account. However, when combined with estimates of the electron-phonon coupling, the predicted superconducting transition temperatures are less than 1 K, making a conventional phononic mechanism for superconductivity highly unlikely. Measurements of the spin dynamics within the spin density wave phase of the parent compounds show evidence of strongly dispersive spin waves with exchange interactions consistent with the observed magnetic order and a large anisotropy gap. Antiferromagnetic fluctuations persist in the normal phase of the superconducting compounds, but they are more diffuse. Below T{sub c}, there is evidence in three '122' compounds that these fluctuations condense into a resonant spin excitation at the antiferromagnetic wavevector with an energy that scales with T{sub c}. Such resonances have been observed in the high-T{sub c} copper oxides and a number of heavy fermion superconductors, where they are considered to be evidence of d-wave symmetry. In the iron arsenides, they also provide evidence of unconventional superconductivity, but a comparison with ARPES and other measurements, which indicate that the gaps are isotropic, suggests that the symmetry is more likely

  13. Inelastic Neutron Scattering Studies of the Spin and Lattice Dynamics inIron Arsenide Compounds

    SciTech Connect

    Christianson, Andrew D; Osborn, R.; Rosenkranz, Stephen; Goremychkin, E. A.

    2009-01-01

    Although neutrons do not couple directly to the superconducting order parameter, they have nevertheless played an important role in advancing our understanding of the pairing mechanism and the symmetry of the superconducting energy gap in the iron arsenide compounds. Measurements of the spin and lattice dynamics have been performed on non-superconducting 'parent' compounds based on the LaFeAsO ('1111') and BaFe{sub 2}As{sub 2} ('122') crystal structures, and on electron and hole-doped superconducting compounds, using both polycrystalline and single crystal samples. Neutron measurements of the phonon density-of-state, subsequently supported by single crystal inelastic X-ray scattering, are in good agreement with ab initio calculations, provided the magnetism of the iron atoms is taken into account. However, when combined with estimates of the electron-phonon coupling, the predicted superconducting transition temperatures are less than 1 K, making a conventional phononic mechanism for superconductivity highly unlikely. Measurements of the spin dynamics within the spin density wave phase of the parent compounds show evidence of strongly dispersive spin waves with exchange interactions consistent with the observed magnetic order and a large anisotropy gap. Antiferromagnetic fluctuations persist in the normal phase of the superconducting compounds, but they are more diffuse. Below T{sub c}, there is evidence in three '122' compounds that these fluctuations condense into a resonant spin excitation at the antiferromagnetic wavevector with an energy that scales with T{sub c}. Such resonances have been observed in the high-T{sub c} copper oxides and a number of heavy fermion superconductors, where they are considered to be evidence of d-wave symmetry. In the iron arsenides, they also provide evidence of unconventional superconductivity, but a comparison with ARPES and other measurements, which indicate that the gaps are isotropic, suggests that the symmetry is more likely

  14. Prevalence of beryllium sensitization among aluminium smelter workers

    PubMed Central

    Slade, M. D.; Cantley, L. F.; Kirsche, S. R.; Wesdock, J. C.; Cullen, M. R.

    2010-01-01

    Background Beryllium exposure occurs in aluminium smelters from natural contamination of bauxite, the principal source of aluminium. Aims To characterize beryllium exposure in aluminium smelters and determine the prevalence rate of beryllium sensitization (BeS) among aluminium smelter workers. Methods A population of 3185 workers from nine aluminium smelters owned by four different aluminium-producing companies were determined to have significant beryllium exposure. Of these, 1932 workers participated in medical surveillance programmes that included the serum beryllium lymphocyte proliferation test (BeLPT), confirmation of sensitization by at least two abnormal BeLPT test results and further evaluation for chronic beryllium disease in workers with BeS. Results Personal beryllium samples obtained from the nine aluminium smelters showed a range of <0.01–13.00 μg/m3 time-weighted average with an arithmetic mean of 0.25 μg/m3 and geometric mean of 0.06 μg/m3. Nine workers were diagnosed with BeS (prevalence rate of 0.47%, 95% confidence interval = 0.21–0.88%). Conclusions BeS can occur in aluminium smelter workers through natural beryllium contamination of the bauxite and further concentration during the refining and smelting processes. Exposure levels to beryllium observed in aluminium smelters are similar to those seen in other industries that utilize beryllium. However, compared with beryllium-exposed workers in other industries, the rate of BeS among aluminium smelter workers appears lower. This lower observed rate may be related to a more soluble form of beryllium found in the aluminium smelting work environment as well as the consistent use of respiratory protection. PMID:20610489

  15. Aluminium composite materials for multichip modules

    SciTech Connect

    Premkumar, M.K.; Hunt, W.H. Jr.; Sawtell, R.R. )

    1992-07-01

    This paper reports that, as a result of continued advances in microelectronics, packaging technologies have become ital to the success of advanced designs. Progress in this field has been driven by advances in active device technologies that have resulted in significant miniaturization, increased functional density, and higher operating frequencies. These developments have produced ever-increasing power densities requiring improve thermal management schemes. In particular, multichip modules (MCMs) present challenges because they contain several devices in close proximity. The alternatives to improve cooling schemes-higher junction temperatures and decreased reliability-are clearly unacceptable. Requirements for improved cooling are complicated further in avionics systems by the need to minimize system weight and in automotive systems by the need to provide protection from a more hostile environment while maintaining low cost. These needs are driving materials developments along a number of fonts, as reviewed in Carl Zweben's article in this issue. Unfortunately, no current-generation material can meet all of these challenges. The use of aluminum or copper results in unacceptable expansion stress on silicon- or gallium arsenide-based devices. Kovar is costly to manufacture in complex configurations and ins inherently poor in thermal conductivity. The Cu/W and Cu/Mo blends, either in the form of metallurgical or macroscopic composites, offer good thermal conductivity but are inherently heavy and are manufactured from expensive raw materials.

  16. Aluminium salt slag characterization and utilization--a review.

    PubMed

    Tsakiridis, P E

    2012-05-30

    Aluminium salt slag (also known as aluminium salt cake), which is produced by the secondary aluminium industry, is formed during aluminium scrap/dross melting and contains 15-30% aluminium oxide, 30-55% sodium chloride, 15-30% potassium chloride, 5-7% metallic aluminium and impurities (carbides, nitrides, sulphides and phosphides). Depending on the raw mix the amount of salt slag produced per tonne of secondary aluminium ranges from 200 to 500 kg. As salt slag has been classified as toxic and hazardous waste, it should be managed in compliance with the current legislation. Its landfill disposal is forbidden in most of the European countries and it should be recycled and processed in a proper way by taking the environmental impact into consideration. This paper presents a review of the aluminium salt slag chemical and mineralogical characteristics, as well as various processes for metal recovery, recycling of sodium and potassium chlorides content back to the smelting process and preparation of value added products from the final non metallic residue. PMID:22480708

  17. Deviatoric response of the aluminium alloy, 5083

    NASA Astrophysics Data System (ADS)

    Appleby-Thomas, Gareth; Hazell, Paul; Millett, Jeremy; Bourne, Neil

    2009-06-01

    Aluminium alloys such as 5083 are established light weight armour materials. As such, the shock response of these materials is of great importance. The shear strength of a material under shock loading provides an insight into its ballistic performance. In this investigation embedded manganin stress gauges have been employed to measure both the longitudinal and lateral components of stress during plate impact experiments over a range of impact stresses. In turn, these results were used to determine the shear strength and to investigate the time dependence of lateral stress behind the shock front to give an indication of material response.

  18. Multilayer roll bonded aluminium foil: processing, microstructure and flow stress

    SciTech Connect

    Barlow, C.Y.; Nielsen, P.; Hansen, N

    2004-08-02

    Bulk aluminium has been produced by warm-rolling followed by cold-rolling of commercial purity (99% purity) aluminium foil. The bonding appeared perfect from observation with the naked eye, light and transmission electron microscopy. By comparison with bulk aluminium of similar purity (AA1200) rolled to a similar strain (90%RA), the roll-bonded metal showed a much higher density of high-angle grain boundaries, similar strength and improved thermal stability. This study has implications for a number of applications in relation to the processing of aluminium. Roll bonding is of interest as a method for grain size refinement; oxide-containing materials have increased strength, enhanced work-hardening behaviour, and exhibit alterations in recrystallisation behaviour. The behaviour of the hard oxide film is of interest in aluminium processing, and has been investigated by characterising the size and distribution of oxide particles in the roll-bonded samples.

  19. Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

    PubMed Central

    Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

    2015-01-01

    This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer. PMID:25922850

  20. Usage of neural network to predict aluminium oxide layer thickness.

    PubMed

    Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

    2015-01-01

    This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer. PMID:25922850

  1. Albumin adsorption on to aluminium oxide and polyurethane surfaces.

    PubMed

    Sharma, C P; Sunny, M C

    1990-05-01

    The changes in protein adsorption onto aluminium surfaces coated with different thicknesses of oxide layers were examined. The oxide layers on aluminium substrates were derived by the anodizing technique. Protein adsorption studies were conducted using 125I-labelled albumin and the amount of albumin adsorbed was estimated with the help of a gamma counter. An increase in albumin adsorption was observed on oxide layer coated aluminium surfaces. The effect of anti-Hageman factor on albumin and fibrinogen adsorption on to bare aluminium, oxide layer coated aluminium and bare polyether urethane urea surfaces was also investigated. It was observed that the presence of anti-Hageman factor increased the adsorption of albumin and fibrinogen on to all these substrates. PMID:2383620

  2. Aluminium Electroplating on Steel from a Fused Bromide Electrolyte

    SciTech Connect

    Prabhat Tripathy; Laura Wurth; Eric Dufek; Toni Y. Gutknecht; Natalie Gese; Paula Hahn; Steven Frank; Guy Fredrickson; J Stephen Herring

    2014-08-01

    A quaternary bromide bath (LiBr-KBr-CsBr-AlBr3) was used to electro-coat aluminium on steel substrates. The electrolyte was prepared by the addition of AlBr3 into the eutectic LiBr-KBr-CsBr melt. A smooth, thick, adherent and shiny aluminium coating could be obtained with 80 wt.% AlBr3 in the ternary melt. The SEM photographs of the coated surfaces suggest the formation of thick and dense coatings with good aluminium coverage. Both salt immersion and open circuit potential measurement suggest that the coatings did display good corrosion-resistance behavior. Annealing of the coated surfaces, prior to corrosion tests, suggested the robustness of the metallic aluminium coating in preventing the corrosion of the steel surfaces. Studies also indicated that the quaternary bromide plating bath can potentially provide a better aluminium coating on both ferrous and non-ferrous metals, including complex surfaces/geometries.

  3. Galvanised steel to aluminium joining by laser and GTAW processes

    SciTech Connect

    Sierra, G.; Peyre, P.; Deschaux Beaume, F. Stuart, D.; Fras, G.

    2008-12-15

    A new means of assembling galvanised steel to aluminium involving a reaction between solid steel and liquid aluminium was developed, using laser and gas tungsten arc welding (GTAW) processes. A direct aluminium melting strategy was investigated with the laser process, whereas an aluminium-induced melting by steel heating and heat conduction through the steel was carried out with the GTAW process. The interfaces generated during the interaction were mainly composed of a 2-40 {mu}m thick intermetallic reaction layers. The linear strength of the assemblies can be as high as 250 N/mm and 190 N/mm for the assemblies produced respectively by laser and GTAW processes. The corresponding failures were located in the fusion zone of aluminium (laser assemblies), or in the reaction layer (GTAW assemblies)

  4. Volatilisation and oxidation of aluminium scraps fed into incineration furnaces

    SciTech Connect

    Biganzoli, Laura; Gorla, Leopoldo; Nessi, Simone; Grosso, Mario

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Aluminium packaging partitioning in MSW incineration residues is evaluated. Black-Right-Pointing-Pointer The amount of aluminium packaging recoverable from the bottom ashes is evaluated. Black-Right-Pointing-Pointer Aluminium packaging oxidation rate in the residues of MSW incineration is evaluated. Black-Right-Pointing-Pointer 80% of aluminium cans, 51% of trays and 27% of foils can be recovered from bottom ashes. - Abstract: Ferrous and non-ferrous metal scraps are increasingly recovered from municipal solid waste incineration bottom ash and used in the production of secondary steel and aluminium. However, during the incineration process, metal scraps contained in the waste undergo volatilisation and oxidation processes, which determine a loss of their recoverable mass. The present paper evaluates the behaviour of different types of aluminium packaging materials in a full-scale waste to energy plant during standard operation. Their partitioning and oxidation level in the residues of the incineration process are evaluated, together with the amount of potentially recoverable aluminium. About 80% of post-consumer cans, 51% of trays and 27% of foils can be recovered through an advanced treatment of bottom ash combined with a melting process in the saline furnace for the production of secondary aluminium. The residual amount of aluminium concentrates in the fly ash or in the fine fraction of the bottom ash and its recovery is virtually impossible using the current eddy current separation technology. The average oxidation levels of the aluminium in the residues of the incineration process is equal to 9.2% for cans, 17.4% for trays and 58.8% for foils. The differences between the tested packaging materials are related to their thickness, mechanical strength and to the alloy.

  5. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    SciTech Connect

    Fisher, Ian Randal

    2012-05-08

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  6. The Coefficients of Thermal Expansion of Boron Arsenide (B12As2) Between 25 C and 850 C

    SciTech Connect

    Whiteley, Clinton E.; Kirkham, Melanie J; Edgar, J H

    2013-01-01

    The semiconductor boron arsenide has a high 10B density, a wide bandgap, and a high melting temperature, all of which make it an interesting candidate for high-temperature electronic devices and radiation detectors. The present investigation was undertaken to determine the coefficients of thermal expansion for boron arsenide. B12As2 powder was synthesized from boron and arsenic heated in a sealed quartz ampoule at 1100 C for 72 hrs with excess boron. Using high temperature X-ray diffraction (HTXRD) between 25 C and 850 C, the average lattice coefficients of thermal expansion were measured perpendicular and parallel to the <111> axis in the rhombohedral setting (equivalent to the a and c axes in the hexagonal setting): 4.9x10-6 K-1 and 5.3x10-6 K-1, respectively. The average unit cell volumetric coefficient of thermal expansion was determined to be 1.5x10-5 K-1.

  7. Precipitate strengthening of nanostructured aluminium alloy.

    PubMed

    Wawer, Kinga; Lewandowska, Malgorzata; Kurzydlowski, Krzysztof J

    2012-11-01

    Grain boundaries and precipitates are the major microstructural features influencing the mechanical properties of metals and alloys. Refinement of the grain size to the nanometre scale brings about a significant increase in the mechanical strength of the materials because of the increased number of grain boundaries which act as obstacles to sliding dislocations. A similar effect is obtained if nanoscale precipitates are uniformly distributed in coarse grained matrix. The development of nanograin sized alloys raises the important question of whether or not these two mechanisms are "additive" and precipitate strengthening is effective in nanostructured materials. In the reported work, hydrostatic extrusion (HE) was used to obtain nanostructured 7475 aluminium alloy. Nanosized precipitates were obtained by post-HE annealing. It was found that such annealing at the low temperatures (100 degrees C) results in a significant increase in the microhardness (HV0.2) and strength of the nanostructured 7475 aluminium alloy. These results are discussed in terms of the interplay between the precipitation and deformation of nanocrystalline metals. PMID:23421286

  8. Hearing conservation in the primary aluminium industry

    PubMed Central

    Frisch, N.; Dixon-Ernst, C.; Chesson, B. J.; Cullen, M. R.

    2016-01-01

    Background Noise-induced hearing loss has been an intractable problem for heavy industry. Aims To report our experience in reducing the incidence of age-corrected confirmed 10 dB hearing shifts (averaged over 2, 3 and 4kHz) in employees in the primary aluminium industry in Australia over the period 2006–13. Methods We analysed annual audiometric data to determine the number of permanent hearing shifts that occurred in employees in two bauxite mines, three alumina refineries and two aluminium smelters. Annual hearing shift rates were calculated based on the number of employees tested per year. Hearing conservation initiatives undertaken during the study period are described. An assessment of similar exposure group noise exposures was also undertaken to determine the magnitude of noise exposure reduction during the study period. Results Across all operations, hearing shift rates declined from 5.5% per year in 2006 to 1.3% per year in 2013 (P < 0.001). The decline in shift rates was greater in mines and refineries, where baseline shift rates were higher, than in smelter workers. Modest reductions in noise exposure occurred during the study period. Conclusions We observed a substantial decline in hearing shift rates during the study period. We describe the hearing conservation initiatives that were collectively associated with this decline. We suspect these initiatives could be deployed relatively easily and at modest cost in other industries with noise-exposed employees. PMID:26470945

  9. Accidents in the aluminium smelting industry.

    PubMed

    Das, B C; Chaudhury, S

    1995-01-01

    Analysis of the accident records of an aluminium smelting industry, covering about 2,100 employees, over a period of three years, showed a total of 465 accidents of male employees. Out of these, 5 were fatal, 40.86% were from contacts with extreme temperatures, causing burn injury to 42.58%. Hot materials were the agents causing 44.52% of the burn injuries. Molten aluminium constituted 43.96% amongst hot materials. Injury to lower limbs constituted 38.71% and that to upper limbs 36.99%. The accidents occurring to the employees, in the age group of 26-33 years, amounted to 61.72% of the total accidents. The average number of man-days lost per year was 11,153. Average frequency rate of accidents was 30.75 accidents per million man-hours worked. Severity rate of accidents was 2.196 per million man-hours worked. Incident rate per thousand employees was 73.81. Average number of days lost per accidents was 71.95 days and average duration of man-hours between accidents was 32,516. Mean age of the employees, who met with the accidents were 29.53 years. Share of accidents in the second half of each shift was always more than that in the first half, and this average was 66.66%. PMID:8557540

  10. Study on aluminium-based single films.

    PubMed

    Vinod Kumar, G S; García-Moreno, F; Babcsán, N; Brothers, A H; Murty, B S; Banhart, J

    2007-12-28

    In the present paper the authors studied isolated metallic films made from the same material used for making metallic foams, and then characterised their properties. Metal films were made from a liquid aluminium alloy reinforced with ceramic particles of known concentration. Melts without such particles were also investigated. It is shown that stable films could not be made from Al-Si alloy having no particles, and just extremely thin and fragile films could be made from commercially-pure Al. In contrast, aluminium alloys containing particles such as SiC and TiB(2) allowed pulling thin, stable films, which did not rupture. Significant thinning of films was observed when the particle concentration in the melt decreased. By in situ X-ray monitoring of liquid films during pulling, film thickness and drainage effects within the liquid film could be studied. The morphology and microstructure of films was characterised after solidification. Our work shows that the question of how foams are stabilised can be studied using a simplified system such as a film, instead of having to deal with the multitude of different structural elements present in a foam. PMID:18060172

  11. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

    NASA Technical Reports Server (NTRS)

    Chu, T. L.

    1975-01-01

    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  12. Nickel-cobalt-iron-copper sulfides and arsenides in solution-collapse breccia pipes, northwestern Arizona

    SciTech Connect

    Wenrich, K.J. ); Hlava, P.F. )

    1993-04-01

    An extensive suite of Ni-Co-Fe-Cu sulfides and arsenides lies within the matrix of solution-collapse breccias buried deep within the plateaus of the Grand Canyon region. Ceilings over large caverns in the Redwall collapsed, brecciating the overlying sandstone and forming cylindrical breccia pipes up to 300 ft in diameter that extend vertically as much as 3,000 ft. These highly permeable breccias served as a host for the precipitation of a suite of over 100 minerals, including uraninite, sphalerite, galena and various copper phases, in addition to the Ni-Co-bearing-phase discussed here. Intricately zoned crystals of small (<1 mm), euhedral Ni-Co-Fe-As-S minerals were the first to form during the second major episode of mineralization in these pipes. Several of these phases replace minerals, such as barite and anhydrite, from the first episode. Extensive microprobe work has been done on samples from two breccia pipe mines, the Hack 2 and Orphan, which are about 50 miles apart. Mineral compositions are similar except that no copper is found in the Ni-Co-Fe phases from the Hack 2 mine, while pyrites containing 1 wt % Cu are common from the Orphan, which was mined for copper. In some of these pyrites', Cu is dominant and the mineral is actually villamaninite. Pyrites from both mines characteristically contain 0.5 to 3 wt % As. Metal contents in zones pyrite-bravoite-vaesite (M[sub 1]S[sub 2]) crystals at the Hack 2 mine range from Fe[sub 1] to Fe[sub .12], Ni[sub 0] to Ni[sub .86], and Co[sub 0] to Co[sub .10]. The metal content for polydymite-siegenite-violarite averages about (Ni[sub 2.33]Co[sub .39]Fe[sub .23])(S[sub 3.9]As[sub .1]). Orphan mine pyrite-bravoite-vaesite-villamaninite ranges in composition from pure FeS[sub 2] to (Ni[sub .6]Fe[sub .21]Co[sub .17])S[sub 2], and (Cu[sub .46]Ni[sub .27]Fe[sub .21]Co[sub .13])S[sub 2]. Of all the sulfides or arsenides found in these breccia pipes, only nickeline consistently occurs as the pure end member.

  13. The varied functions of aluminium-activated malate transporters-much more than aluminium resistance.

    PubMed

    Palmer, Antony J; Baker, Alison; Muench, Stephen P

    2016-06-15

    The ALMT (aluminium-activated malate transporter) family comprises a functionally diverse but structurally similar group of ion channels. They are found ubiquitously in plant species, expressed throughout different tissues, and located in either the plasma membrane or tonoplast. The first family member identified was TaALMT1, discovered in wheat root tips, which was found to be involved in aluminium resistance by means of malate exudation into the soil. However, since this discovery other family members have been shown to have many other functions such as roles in stomatal opening, general anionic homoeostasis, and in economically valuable traits such as fruit flavour. Recent evidence has also shown that ALMT proteins can act as key molecular actors in GABA (γ-aminobutyric acid) signalling, the first evidence that GABA can act as a signal transducer in plants. PMID:27284052

  14. Aluminium and iron air pollution near an iron casting and aluminium foundry in Turin district (Italy).

    PubMed

    Polizzi, Salvatore; Ferrara, Mauro; Bugiani, Massimiliano; Barbero, Domenico; Baccolo, Tiziana

    2007-09-01

    This work reports the results of an environmental survey carried out in an industrial area in the Province of Turin: its main aim is to assess the levels of iron and aluminium in the outside air during the period from July to September to assess the influence of industrial activity (a cast-iron and aluminium foundry) which is interrupted during the month of August, on the level of metals present in the air. Conducting the analysis during this period of time made it possible to avoid the confounding effect of pollution due to domestic central heating. The measurements were taken from nine areas at different distances from the foundry in the area and according to the direction of the prevailing winds, as deduced from the historical data. The results of this survey show a statistically significant difference in iron and aluminium levels in the outside air in the geographic areas between the two main periods examined: during August (no foundry activity) v/s July-September (foundry activity). The values recorded are: Aluminium 0.4+/-0.45 microg/m(3) v/s 1.12+/-1.29 microg/m(3) (p<0.0001); Iron 0.95+/-0.56 microg/m(3) v/s 1.6+/-1.0 microg/m(3) (p<0.0001). There were no statistically significant differences between the nine sampling points from the point of view of the sampling sites, climate conditions and wind directions. We found no correlation with car traffic, in terms of the number of vehicles, and metals. The values of iron tended to be higher in the areas farther away from the foundry site in the areas located along the path of the prevailing winds. PMID:17637476

  15. A quest for super dense aluminium

    NASA Astrophysics Data System (ADS)

    Fiquet, G.; Narayana, C.; Bellin, C.; Shukla, A.; Esteve, I.; Mezouar, N.

    2013-12-01

    The extreme pressure phase diagram of materials is important not only for understanding the interiors of planets or stars, but also for the fundamental understanding of the relation between crystal structure and electronic structure. Structural transitions induced by extreme pressure are governed by the deformation of valence electron charge density which bears the brunt of increasing compression while the relative volume occupied by the nearly incompressible ionic core electrons increases. At extreme pressures common materials are expected to transform into new dense phases with extremely compact atomic arrangements that may also have unusual physical properties. In this report, we present new experiments carried out on aluminium. A simple system like Al is not only important as a benchmark for theory, but can also be used as a standard for pressures in the TPa range and beyond which are targeted at new dynamic compression facilities such as the National Ignition Facility (NIF) at the Lawrence Livermore National Laboratory in the US or Laser Mégajoule (LMJ) in Bordeaux in France. For aluminium, first principle calculations have consistently predicted a phase transition sequence from fcc to hcp and hcp to bcc in a pressure range below 0.5 TPa [Tambe et al., Phys. Rev. B 77, 172102, 2008]. The hcp phase was identified at 217 GPa in a recent experiment [Akahama et al., Phys. Rev. Lett. 96, 45505, 2006] but the detection of the predicted bcc phase has been hampered by the difficulty of routine static high pressure experiments beyond 350 GPa. Here, we report on the overcoming of this obstacle and the detection of all the structural phase transitions predicted in Al by achieving a pressure in excess of 500 GPa in the static regime in a diamond-anvil cell. In particular, using X-ray diffraction at the high-pressure beamline ID27 at the European Synchrotron Radiation Facility (ESRF), we find a bcc super-dense phase of aluminium at a pressure of 380 GPa. In this report

  16. Melt spun aluminium alloys for moulding optics

    NASA Astrophysics Data System (ADS)

    Gubbels, G.; Tegelaers, L.; Senden, R.

    2013-09-01

    Melt spinning is a rapid quenching process that makes it possible to create materials with a very fine microstructure. Due to this very fine microstructure the melt spinning process is an enabler for diamond turning optics and moulds without the need of post-polishing. Using diamond turning of melt spun aluminium one can achieve <=2 nm Rq surface roughness. Application areas are imaging and projection optics, mirrors, moulds for contact lenses and spectacles. One of the alloys that RSP produces is RSA-905. This alloy has a solid track record as a better and cheaper concept in the application of moulds for optical components such as contact lenses. The RSA-905 is a dispersion hardened amorphous-like alloy that keeps its properties when exposed to elevated temperatures (up to 380°C). This gives the material unique features for optics moulding applications. RSA-905 moulds are cheaper and better than traditional mould concepts such as copper or brass with or without NiP plating. In addition logistics can be simplified significantly: from typical weeks-months into days-week. Lifetime is typically in the range of 100.000 - 200.000 shots. For high volume production typically ranging from several 100.000 - several 1.000.000 shots, NiP plated steel moulds are typically used. By using an appropriate optical coating concept RSA-905 can be upgraded to a competitive alternative to steel in terms of price, performance and logistics. This paper presents some recent developments for improved mould performance of such concept. Hardness, wear resistance and adhesion are topics of interest and they can be applied by special coatings such as diamond-like carbon (DLC) and chromium nitride (CrN). These coatings make the aluminium alloy suitable for moulding mass production of small as well as larger optics, such as spectacle lenses.

  17. Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

    SciTech Connect

    Anspaugh, B.E.; Downing, R.G.

    1984-09-01

    Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

  18. Analysis of costs of gallium arsenide and silicon solar arrays for space power applications

    NASA Technical Reports Server (NTRS)

    Jefferies, K. S.

    1981-01-01

    A parametric analysis was performed to compare the costs of silicon and gallium arsenide arrays for Earth orbital missions. The missions included electric power in low Earth orbit (LEO), electric power in geosynchronous Earth orbit (GEO), and power for electric propulsion of a LEO to GEO orbit transfer mission. Inputs to the analysis for all missions included launch and purchase costs of the array. For the orbit transfer mission, the launch and purchase costs of the electric propulsion system were added. Radiation flux as a function of altitude and rediation tolerance as a function of cell type were used to determine power degradation for each mission. Curves were generated that show the sensitivity of launch-array cost and total mission cost to a variety of input parameters for each mission. These parameters included mission duration, cover glass thickness, array specific cost, array specific mass, and solar cell efficiency. Solar concentration was considered and the sensitivities of cost to concentration ratio, concentrator costs, and concentrator mass were also evaluated. Results indicate that solar cell development should give a high priority to reducing array costs and that the development of low cost, lightweight, solar concentrators should be pursued.

  19. In vitro toxicity of gallium arsenide in alveolar macrophages evaluated by magnetometry, cytochemistry and morphology.

    PubMed

    Okada, M; Karube, H; Niitsuya, M; Aizawa, Y; Okayasu, I; Kotani, M

    1999-12-01

    Gallium arsenide (GaAs), a chemical compound of gallium and arsenic, causes various toxic effects including pulmonary diseases in animals. Since the toxicity is not completely investigated, GaAs has been used in workplaces as the material of various semiconductor products. The present study was conducted to clarify the toxicity of GaAs particles in the alveolar macrophages of hamsters using magnetometry, enzyme release assays and morphological examinations. Alveolar macrophages obtained from hamsters by tracheobronchial lavage and adhered to the disks in the bottom of wells were exposed to ferrosoferric oxide and GaAs particles. Ferrosoferric oxide particles were magnetized externally and the remanent magnetic field was measured. Relaxation, a fast decline of the remanent magnetic fields radiated from the alveolar macrophages, was delayed and decay constants were decreased dose-dependently due to exposure to GaAs. Because the relaxation is thought to be associated with cytoskeleton, the exposure of GaAs may have impaired the motor function of them. Enzyme release assay and morphological findings indicated the damage to the macrophages. Thus the cytotoxicity causes cytostructural changes and cell death. According to DNA electrophoresis and the TUNEL method, necrotic changes occur more frequently than apoptotic changes. PMID:10739163

  20. Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

    SciTech Connect

    Wampler, William R. Myers, Samuel M.

    2015-01-28

    A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation.

  1. Theory, design, and simulation of GASP: A block data flow architecture for gallium arsenide supercomputers

    SciTech Connect

    Fouts, D.J.

    1990-01-01

    The advantages and disadvantages of using high-speed gallium arsenide (GaAs) logic for implementing digital systems are reviewed. A set of design guidelines is presented for systems that will be constructed with high-speed technologies such as GaAs and silicon emitter coupled logic (ECL). A new class of computer and digital system architectures, known as functionally modular architectures, is defined and explained. Functionally modular architectures are ideal for implementation in GaAs because they adhere to the design guidelines. GASP, a new, functionally modular, block data flow computer architecture is then described. SPICE simulations indicate that if constructed with existing GaAs IC technology, parts of GASP could run at a clock speed of 1 GHz, with the rest of the architecture using a 500 MHz clock. The new architecture uses data flow techniques at a program block level, which allows efficient execution of parallel programs while maintaining reasonably good performance on sequential programs. A simulation study of the architecture's best case and worst case performance is presented. Simulations of GASP executing a highly parallel program indicate that an instruction execution rate of over 30,000 MIPS can be attained with a 65 processor system.

  2. Itinerant Double-Q Spin-Density Wave in Iron Arsenide Superconductors

    NASA Astrophysics Data System (ADS)

    Osborn, Raymond; Allred, Jared; Chmaissem, Omar; Rosenkranz, Stephan; Brown, Dennis; Taddei, Keith; Krogstad, Matthew; Bugaris, Daniel; Chung, Duck-Young; Claus, Helmut; Lapidus, Saul; Kanatzidis, Mercouri; Kang, Jian; Fernandes, Rafael; Eremin, Ilya

    The recent observation of a tetragonal magnetic (C4) phase in hole-doped iron arsenide superconductors has provided evidence of a magnetic origin for the electronic nematicity in the C2 phase of these compounds. Now, Mössbauer data shows that the new phase also establishes the itinerant character of the antiferromagnetism of these materials and the primary role played by magnetic over orbital degrees of freedom. Neutron diffraction had shown that the magnetic order in the C4 phase was compatible with a double-Q structure arising from a collinear spin-density wave along both the X and Y directions simultaneously. The coherent superposition of the two modulations produces a non-uniform magnetic structure, in which the spin amplitudes vanish on half of the sites and double on the others, a uniquely itinerant effect that is incompatible with local moment magnetism. Mössbauer spectra in the C4 phase confirm this double-Q structure, with 50% of the spectral weight in a zero-moment peak and 50% with double the magnetic splitting seen in the C2 phase. Supported by the US DOE Office of Science, Materials and Engineering Division.

  3. Arsenic moiety in gallium arsenide is responsible for neuronal apoptosis and behavioral alterations in rats

    SciTech Connect

    Flora, Swaran J.S. Bhatt, Kapil; Mehta, Ashish

    2009-10-15

    Gallium arsenide (GaAs), an intermetallic semiconductor finds widespread applications in high frequency microwave and millimeter wave, and ultra fast supercomputers. Extensive use of GaAs has led to increased exposure to humans working in semiconductor industry. GaAs has the ability to dissociate into its constitutive moieties at physiological pH and might be responsible for the oxidative stress. The present study was aimed at evaluating, the principle moiety (Ga or As) in GaAs to cause neurological dysfunction based on its ability to cause apoptosis, in vivo and in vitro and if this neuronal dysfunction translated to neurobehavioral changes in chronically exposed rats. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased reactive oxygen species (ROS) and nitric oxide (NO) generation, both in vitro and in vivo. Increased ROS further caused apoptosis via mitochondrial driven pathway. Effects of oxidative stress were also confirmed based on alterations in antioxidant enzymes, GPx, GST and SOD in rat brain. We noted that ROS induced oxidative stress caused changes in the brain neurotransmitter levels, Acetylcholinesterase and nitric oxide synthase, leading to loss of memory and learning in rats. The study demonstrates for the first time that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress induced apoptosis in neuronal cells causing behavioral changes.

  4. Ab-initio Electronic, Transport and Related Properties of Zinc Blende Boron Arsenide (zb-BAs)

    NASA Astrophysics Data System (ADS)

    Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Bagayoko, Diola

    We present results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide (zb-BAs). We utilized a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism. Our computational technique follows the Bagayoko, Zhao, and Williams method, as enhanced by Ekuma and Franklin. Our results include electronic energy bands, densities of states, and effective masses. We explain the agreement between these findings, including the indirect band gap, and available, corresponding, experimental ones. This work confirms the capability of DFT to describe accurately properties of materials, provided the computations adhere to the conditions of validity of DFT [AIP Advances, 4, 127104 (2014)]. Acknowledgments: This work was funded in part by the National Science Foundation (NSF) and the Louisiana Board of Regents, through LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, the US Department of Energy - National, Nuclear Security Administration (NNSA) (Award No. DE- NA0002630), LaSPACE, and LONI-SUBR.

  5. High stability of negative electron affinity gallium arsenide photocathodes activated with Cs and NF3

    NASA Astrophysics Data System (ADS)

    Chanlek, N.; Herbert, J. D.; Jones, R. M.; Jones, L. B.; Middleman, K. J.; Militsyn, B. L.

    2015-09-01

    In this paper we report the first time demonstration under extremely high vacuum (XHV) conditions of the influence of O2, CO2, CO, N2, H2 and CH4 on the quantum efficiency (QE) of negative electron affinity (NEA) gallium arsenide (GaAs) photocathodes activated with Cs and NF3. The photocathodes were exposed to a small quantity (<0.25 Langmuirs) of each gas species under test in a vacuum chamber with a typical base pressure of 1.5× {{10}-11} mbar, thereby minimising the influence of the residual gas in the photocathode response. It was found that exposure to N2, H2 and CH4 does not affect the QE of the photocathodes, whereas exposure to O2 and CO2 lead to a substantial reduction in the QE of the photocathodes. Only small degradation in the QE under CO exposure was observed. Compared to those activated with Cs and O2 in our previous study [1], photocathodes activated with Cs and NF3 are more stable, especially under exposure to CO.

  6. Ab initio study of the effect of vacancies on the thermal conductivity of boron arsenide

    NASA Astrophysics Data System (ADS)

    Protik, Nakib Haider; Carrete, Jesús; Katcho, Nebil A.; Mingo, Natalio; Broido, David

    2016-07-01

    Using a first principles theoretical approach, we show that vacancies give anomalously strong suppression of the lattice thermal conductivity κ of cubic Boron arsenide (BAs), which has recently been predicted to have an exceptionally high κ . This effect is tied to the unusually large phonon lifetimes in BAs and results in a stronger reduction in the BAs κ than occurs in diamond. The large changes in bonding around vacancies cannot be accurately captured using standard perturbative methods and are instead treated here using an ab initio Green function approach. As and B vacancies are found to have similar effects on κ . In contrast, we show that commonly used mass disorder models for vacancies fail for large mass ratio compounds such as BAs, incorrectly predicting much stronger (weaker) phonon scattering when the vacancy is on the heavy (light) atom site. The quantitative treatment given here contributes to fundamental understanding of the effect of point defects on thermal transport in solids and provides guidance to synthesis efforts to grow high quality BAs.

  7. Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

    NASA Astrophysics Data System (ADS)

    Wampler, William R.; Myers, Samuel M.

    2015-01-01

    A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation.

  8. Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide

    SciTech Connect

    Gong, Y.; Kuball, M.; Zhang, Y.; Dudley, M.; Zhang, Y.; Edgar, J. H.; Heard, P. J.

    2010-10-15

    The thermal conductivity of icosahedral boron arsenide (B{sub 12}As{sub 2}) films grown on (0001) 6H-SiC substrates by chemical vapor deposition was studied by the 3{omega} technique. The room temperature thermal conductivity decreased from 27.0 to 15.3 W/m K as the growth temperature was decreased from 1450 to 1275 deg. C. This is mainly attributed to the differences in the impurity concentration and microstructure, determined from secondary ion mass spectrometry and high resolution transmission electron microscopy, respectively. Callaway's theory was applied to calculate the temperature-dependent thermal conductivity, and the results are in good agreement with the experimental data. Seebeck coefficients were determined as 107 {mu}V/K and 136 {mu}V/K for samples grown at 1350 deg. C with AsH{sub 3}/B{sub 2}H{sub 6} flow ratio equals to 1:1 and 3:5, respectively.

  9. Pulmonary clearance and toxicity of respirable gallium arsenide particulates intratracheally instilled into rats

    SciTech Connect

    Webb, D.R.; Wilson, S.E.; Carter, D.E.

    1987-07-01

    Gallium arsenide (GaAs) is an intermetallic compound that is recognized as a potential toxicological risk to workers occupationally exposed to its dust. Previous results have shown that rats intratracheally instilled with a fraction of GaAs particulates, characterized with a mean count diameter of 8.30 ..mu..m and a mean volume diameter of 12.67 ..mu..m, developed signs of systemic arsenic intoxication, pulmonary inflammation, and pneumocyte hyperplasia. The results of the present study confirm these findings and also show that a significantly smaller fraction of GaAs is a relatively more severe pneumotoxicant. Decreasing the particle mean count and mean volume diameter to 1.63 ..mu..m and 5.82 ..mu..m, respectively, increased in vivo dissolution rate of GaAs, increased the severity of pulmonary lesions previously associated with GaAs exposure, and resulted in unique pathological sequalae in affected lung tissue. Pulmonary fibrosis, as indicated by analysis of lung 4-hydroxyproline content, was not considered statistically significant although histological examination of lung tissue revealed a mild fibrotic response. These results provide additional evidence that pulmonary exposure to respirable GaAs particulates is a potential health hazard in the semiconductor industry.

  10. A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

    NASA Astrophysics Data System (ADS)

    Kang, Nam Soo; Zirkle, Thomas E.; Schroder, Dieter K.

    1992-07-01

    We have demonstrated a stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide (GaAs) using cathodoluminescence (CL), thermally stimulated current spectroscopy (TSC), and low temperature Fourier transform infrared spectroscopy (FTIR). Cathodoluminescence shows a local gettering effect around dislocation cores in bulk semi-insulating GaAs qualitatively. This gettering result was confirmed by low temperature FTIR data, which show absorption features resulting from the transition of electrons from the valence band to copper levels. The energy level of each absorption shoulder corresponds to the various copper levels in GaAs. After gettering, the absorption depth at each shoulder decreases. Thermally stimulated current measurements show changes after copper doping. The characteristic returns to that of uncontaminated GaAs after gettering. On the basis of these qualitative and quantitative data, we conclude that copper was gettered, and we propose a stress gettering mechanism in semi-insulating, copper-contaminated GaAs on the basis of dislocation cores acting as localized gettering sites.

  11. Resonant photo-thermal modification of vertical gallium arsenide nanowires studied using Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Walia, Jaspreet; Boulanger, Jonathan; Dhindsa, Navneet; LaPierre, Ray; (Shirley Tang, Xiaowu; Saini, Simarjeet S.

    2016-06-01

    Gallium arsenide nanowires have shown considerable promise for use in applications in which the absorption of light is required. When the nanowires are oriented vertically, a considerable amount of light can be absorbed, leading to significant heating effects. Thus, it is important to understand the threshold power densities that vertical GaAs nanowires can support, and how the nanowire morphology is altered under these conditions. Here, resonant photo-thermal modification of vertical GaAs nanowires was studied using both Raman spectroscopy and electron microscopy techniques. Resonant waveguiding, and subsequent absorption of the excited optical mode reduces the irradiance vertical GaAs nanowires can support relative to horizontal ones, by three orders of magnitude before the onset of structural changes occur. A power density of only 20 W mm‑2 was sufficient to induce local heating in the nanowires, resulting in the formation of arsenic species. Upon further increasing the power, a hollow nanowire morphology was realized. These findings are pertinent to all optical applications and spectroscopic measurements involving vertically oriented GaAs nanowires. Understanding the optical absorption limitations, and the effects of exceeding these limitations will help improve the development of all III–V nanowire devices.

  12. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    SciTech Connect

    Wampler, William R.; Myers, Samuel M.

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  13. Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    Michael, Sherif; Cypranowski, Corinne; Anspaugh, Bruce

    1990-01-01

    The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

  14. Enhancing the three-dimensional electronic structure in 1111-type iron arsenide superconductors by H substitution

    NASA Astrophysics Data System (ADS)

    Muraba, Yoshinori; Matsuishi, Satoru; Hosono, Hideo

    2014-03-01

    The 1111-type iron arsenide hydride CaFe1-xCoxAsH was synthesized by high-pressure solid-state reaction, and its electronic structure and superconducting properties were investigated. Bulk superconductivity was observed at x = 0.09-0.26. A maximum superconducting critical temperature (Tc max) of 23 K was observed at x = 0.09. These values are in agreement with those of CaFe1-xCoxAsF. The calculated Fermi surface of CaFeAsH has a small three-dimensional (3D) hole pocket around the Γ point. This is a result of weak covalent bonding between the As 4p and H 1s orbitals. No such covalency exists in CaFeAsF, because the energy level of the F 2p orbital is sufficiently deep to inhibit overlap with the As 4p orbital. The similar superconductivities of CaFe1-xCoxAsH and CaFe1-xCoxAsF are explained with the nesting scenario. The small 3D hole pocket of CaFe1-xCoxAsH does not significantly contribute to electron excitation. These findings encourage exploration of hydrogen-containing 1111-type iron-based materials with lower anisotropies and higher Tc applicable to superconducting wires and tapes.

  15. Structural anomalies in undoped Gallium Arsenide observed in high resolution diffraction imaging with monochromatic synchrotron radiation

    NASA Technical Reports Server (NTRS)

    Steiner, B.; Kuriyama, M.; Dobbyn, R. C.; Laor, U.; Larson, D.; Brown, M.

    1988-01-01

    Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

  16. Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.; Downing, R. G.

    1984-01-01

    Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

  17. Discovery of a Weyl fermion state with Fermi arcs in niobium arsenide

    NASA Astrophysics Data System (ADS)

    Alidoust, Nasser; Xu, Su-Yang; Belopolski, Ilya; Bian, Guang; Zheng, Hao; Sanchez, Daniel S.; Neupert, Titus; Hasan, M. Zahid; Yuan, Zhujun; Zhang, Chenglong; Jia, Shuang; Mou, Daixiang; Wu, Yun; Huang, Lunan; Kaminski, Adam; Strocov, Vladimir N.; Wang, Baokai; Bansil, Arun; Chang, Tay-Rong; Jeng, Horng-Tay; Chang, Guoqing; Lee, Chi-Cheng; Huang, Shin-Ming; Lin, Hsin

    Three types of fermions play a fundamental role in our understanding of nature: Dirac, Majorana and Weyl. A Weyl semimetal is a novel crystal whose low-energy electronic excitations behave as Weyl fermions. Here, we present the experimental discovery of the Weyl semimetal state in an inversion-symmetry-breaking single-crystalline solid, niobium arsenide (NbAs). Utilizing the combination of soft X-ray and ultraviolet photoemission spectroscopy, we systematically study both the surface and bulk electronic structure of NbAs. We experimentally observe both the Weyl cones in the bulk and the Fermi arcs on the surface of this system. Our ARPES data, in agreement with our theoretical calculations, identify the Weyl semimetal state in NbAs, which provides a platform to test the potential of Weyltronics. The work at Princeton and Princeton-led ARPES measurements were supported by Gordon and Betty Moore Foundations EPiQS Initiative, Grant GBMF4547 (Hasan), and by U.S. DOE DE-FG-02-05ER46200.

  18. Aluminium alloys in municipal solid waste incineration bottom ash.

    PubMed

    Hu, Yanjun; Rem, Peter

    2009-05-01

    With the increasing growth of incineration of household waste, more and more aluminium is retained in municipal solid waste incinerator bottom ash. Therefore recycling of aluminium from bottom ash becomes increasingly important. Previous research suggests that aluminium from different sources is found in different size fractions resulting in different recycling rates. The purpose of this study was to develop analytical and sampling techniques to measure the particle size distribution of individual alloys in bottom ash. In particular, cast aluminium alloys were investigated. Based on the particle size distribution it was computed how well these alloys were recovered in a typical state-of-the-art treatment plant. Assessment of the cast alloy distribution was carried out by wet physical separation processes, as well as chemical methods, X-ray fluorescence analysis and electron microprobe analysis. The results from laboratory analyses showed that cast alloys tend to concentrate in the coarser fractions and therefore are better recovered in bottom ash treatment plants. PMID:19423581

  19. Aluminium leaching from red mud by filamentous fungi.

    PubMed

    Urík, Martin; Bujdoš, Marek; Milová-Žiaková, Barbora; Mikušová, Petra; Slovák, Marek; Matúš, Peter

    2015-11-01

    This contribution investigates the efficient and environmentally friendly aluminium leaching from red mud (bauxite residue) by 17 species of filamentous fungi. Bioleaching experiments were examined in batch cultures with the red mud in static, 7-day cultivation. The most efficient fungal strains in aluminium bioleaching were Penicillium crustosum G-140 and Aspergillus niger G-10. The A. niger G-10 strain was capable to extract up to approximately 141 mg·L(-1) of aluminium from 0.2 g dry weight red mud. Chemical leaching with organic acids mixture, prepared according to A. niger G-10 strain's respective fungal excretion during cultivation, proved that organic acids significantly contribute to aluminium solubilization from red mud. PMID:26365318

  20. Surface roughness when diamond turning RSA 905 optical aluminium

    NASA Astrophysics Data System (ADS)

    Otieno, T.; Abou-El-Hossein, K.; Hsu, W. Y.; Cheng, Y. C.; Mkoko, Z.

    2015-08-01

    Ultra-high precision machining is used intensively in the photonics industry for the production of various optical components. Aluminium alloys have proven to be advantageous and are most commonly used over other materials to make various optical components. Recently, the increasing demand from optical systems for optical aluminium with consistent material properties has led to the development of newly modified grades of aluminium alloys produced by rapid solidification in the foundry process. These new aluminium grades are characterised by their finer microstructures and refined mechanical and physical properties. However the machining database of these new optical aluminium grades is limited and more research is still required to investigate their machinability performance when they are diamond turned in ultrahigh precision manufacturing environment. This work investigates the machinability of rapidly solidified aluminium RSA 905 by varying a number of diamond-turning cutting parameters and measuring the surface roughness over a cutting distance of 4 km. The machining parameters varied in this study were the cutting speed, feed rate and depth of cut. The results showed a common trend of decrease in surface roughness with increasing cutting distance. The lowest surface roughness Ra result obtained after 4 km in this study was 3.2 nm. This roughness values was achieved using a cutting speed of 1750 rpm, feed rate of 5 mm/min and depth of cut equal to 25 μm.

  1. Volatilisation and oxidation of aluminium scraps fed into incineration furnaces.

    PubMed

    Biganzoli, Laura; Gorla, Leopoldo; Nessi, Simone; Grosso, Mario

    2012-12-01

    Ferrous and non-ferrous metal scraps are increasingly recovered from municipal solid waste incineration bottom ash and used in the production of secondary steel and aluminium. However, during the incineration process, metal scraps contained in the waste undergo volatilisation and oxidation processes, which determine a loss of their recoverable mass. The present paper evaluates the behaviour of different types of aluminium packaging materials in a full-scale waste to energy plant during standard operation. Their partitioning and oxidation level in the residues of the incineration process are evaluated, together with the amount of potentially recoverable aluminium. About 80% of post-consumer cans, 51% of trays and 27% of foils can be recovered through an advanced treatment of bottom ash combined with a melting process in the saline furnace for the production of secondary aluminium. The residual amount of aluminium concentrates in the fly ash or in the fine fraction of the bottom ash and its recovery is virtually impossible using the current eddy current separation technology. The average oxidation levels of the aluminium in the residues of the incineration process is equal to 9.2% for cans, 17.4% for trays and 58.8% for foils. The differences between the tested packaging materials are related to their thickness, mechanical strength and to the alloy. PMID:22749723

  2. Aluminium content of some foods and food products in the USA, with aluminium food additives.

    PubMed

    Saiyed, Salim M; Yokel, Robert A

    2005-03-01

    The primary objective was to determine the aluminium (Al) content of selected foods and food products in the USA which contain Al as an approved food additive. Intake of Al from the labeled serving size of each food product was calculated. The samples were acid or base digested and analysed for Al using electrothermal atomic absorption spectrometry. Quality control (QC) samples, with matrices matching the samples, were generated and used to verify the Al determinations. Food product Al content ranged from <1-27,000 mg kg(-1). Cheese in a serving of frozen pizzas had up to 14 mg of Al, from basic sodium aluminium phosphate; whereas the same amount of cheese in a ready-to-eat restaurant pizza provided 0.03-0.09 mg. Many single serving packets of non-dairy creamer had approximately 50-600 mg Al kg(-1) as sodium aluminosilicate, providing up to 1.5 mg Al per serving. Many single serving packets of salt also had sodium aluminosilicate as an additive, but the Al content was less than in single-serving non-dairy creamer packets. Acidic sodium aluminium phosphate was present in many food products, pancakes and waffles. Baking powder, some pancake/waffle mixes and frozen products, and ready-to-eat pancakes provided the most Al of the foods tested; up to 180 mg/serving. Many products provide a significant amount of Al compared to the typical intake of 3-12 mg/day reported from dietary Al studies conducted in many countries. PMID:16019791

  3. An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging

    NASA Technical Reports Server (NTRS)

    Cohen, Marshall J.; Ettenberg, Martin H.; Lange, Michael J.; Olsen, Gregory H.

    1999-01-01

    PIN photodiodes fabricated from indium gallium arsenide lattice-matched to indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD < 10(exp -8) A/sq cm), and high shunt resistance-area products (RoA > 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.

  4. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    SciTech Connect

    Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

    2014-03-07

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed.

  5. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    NASA Astrophysics Data System (ADS)

    Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

    2014-03-01

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (˜4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ˜4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed.

  6. Coherent detection of THz waves based on THz-induced time-resolved luminescence quenching in bulk gallium arsenide.

    PubMed

    Chu, Zheng; Liu, Jinsong; Wang, Kejia

    2012-05-01

    A kind of photoluminescence quenching, in which the time-resolved photoluminescence is modulated by a THz pulse, has been theoretically investigated by performing the ensemble Monte Carlo method in bulk gallium arsenide (GaAs) at room temperature. The quenching ratio could reach up to 50% under a strong THz field (100  kV/cm). The range in which luminescence quenching is linearly proportional to the THz field could be over 60  kV/cm. On the basis of these results, a principle for THz modulation and coherent detection is proposed. PMID:22555695

  7. Elevated urinary excretion of aluminium and iron in multiple sclerosis.

    PubMed

    Exley, Christopher; Mamutse, Godwin; Korchazhkina, Olga; Pye, Eleanor; Strekopytov, Stanislav; Polwart, Anthony; Hawkins, Clive

    2006-10-01

    Multiple sclerosis (MS) is a chronic, immune-mediated, demyelinating disease of the central nervous system of as yet unknown aetiology. A consensus of opinion has suggested that the disorder is the result of an interplay between environmental factors and susceptibility genes. We have used a battery of analytical techniques to determine if the urinary excretion of i) markers of oxidative damage; ii) iron and iii) the environmental toxin aluminium and its antagonist, silicon, are altered in relapsing-remitting (RRMS) and secondary progressive MS (SPMS). Urinary concentrations of oxidative biomarkers, MDA and TBARS, were not found to be useful indicators of inflammatory disease in MS. However, urinary concentrations of another potential marker for inflammation and oxidative stress, iron, were significantly increased in SPMS (P<0.01) and insignificantly increased in RRMS (P>0.05). Urinary concentrations of aluminium were also significantly increased in RRMS (P<0.001) and SPMS (P <0.05) such that the levels of aluminium excretion in the former were similar to those observed in individuals undergoing metal chelation therapy. The excretion of silicon was lower in MS and significantly so in SPMS (P<0.05). Increased excretion of iron in urine supported a role for iron dysmetabolism in MS. Levels of urinary aluminium excretion similar to those seen in aluminium intoxication suggested that aluminium may be a hitherto unrecognized environmental factor associated with the aetiology of MS. If aluminium is involved in MS then an increased dietary intake of its natural antagonist, silicon, might be a therapeutic option. PMID:17086897

  8. A systematic review of aluminium phosphide poisoning.

    PubMed

    Mehrpour, Omid; Jafarzadeh, Mostafa; Abdollahi, Mohammad

    2012-03-01

    Every year, about 300,000 people die because of pesticide poisoning worldwide. The most common pesticide agents are organophosphates and phosphides, aluminium phosphide (AlP) in particular. AlP is known as a suicide poison that can easily be bought and has no effective antidote. Its toxicity results from the release of phosphine gas as the tablet gets into contact with moisture. Phosphine gas primarily affects the heart, lungs, gastrointestinal tract, and kidneys. Poisoning signs and symptoms include nausea, vomiting, restlessness, abdominal pain, palpitation, refractory shock, cardiac arrhythmias, pulmonary oedema, dyspnoea, cyanosis, and sensory alterations. Diagnosis is based on clinical suspicion, positive silver nitrate paper test to phosphine, and gastric aspirate and viscera biochemistry. Treatment includes early gastric lavage with potassium permanganate or a combination with coconut oil and sodium bicarbonate, administration of charcoal, and palliative care. Specific therapy includes intravenous magnesium sulphate and oral coconut oil. Moreover, acidosis can be treated with early intravenous administration of sodium bicarbonate, cardiogenic shock with fluid, vasopresor, and refractory cardiogenic shock with intra-aortic baloon pump or digoxin. Trimetazidine may also have a useful role in the treatment, because it can stop ventricular ectopic beats and bigeminy and preserve oxidative metabolism. This article reviews the epidemiological, toxicological, and clinical/pathological aspects of AlP poisoning and its management. PMID:22450207

  9. Orthorhombic aluminium oxyfluoride, AlOF.

    PubMed

    Vasiliev, Alexander D; Melnikova, Svetlana V; Isaenko, Lyudmila I

    2009-04-01

    Crystals of the title compound were extracted from the bulk of grown SrAlF(5) crystals as unexpected inclusions that were identified as the long sought after aluminium oxyfluoride. The structure of AlOF is built up from tetrahedral and octahedral polyhedra. Each tetrahedron is bisected by a mirror plane, with the Al atom and two vertex anions in the plane. All tetrahedral vertices are positions of competing oxide and fluoride ions and are shared with octahedra. These shared vertices belong to two octahedral edges which join the octahedra to form infinite zigzag chains. The chains are strung along twofold screw axes that run parallel to the unit-cell b axis. The remaining two octahedral vertices are occupied only by fluoride ions. A small deficiency in the occupation of the octahedral Al position was suggested by the refinement. However, the stoichiometry of the compound is AlOF within experimental uncertainty. The Al-F(O) distances are separated into three groups with average values of 1.652 (3) (tetrahedra), 1.800 (2) (octahedra) and 1.894 (2) A (octahedra). This structure differs widely from the reported tetragonal phase Al(1-x)O(1-3x)F(1+3x) (x = 0.0886) [Kutoglu (1992). Z. Kristallogr. 199, 197-201], which consists solely of octahedral structural units. PMID:19346595

  10. Adsorption of aluminium by stream particulates.

    PubMed

    Tipping, E; Ohnstad, M; Woof, C

    1989-01-01

    An experimental study was made of the adsorption of aluminium by fine particulates from Whitray Beck, a hill stream in NW England. Adsorption increased with Al(3) activity, pH and concentration of particles, and could be quantitatively described by the empirical equation: [Formula: see text] [particles] where square brackets indicate concentrations, curly brackets, activities, and alpha, beta and gamma are constants with values of 5.14x10(-10) (mol litre(-1))(2.015) (g particles litre(-1))(-1), 0.457, and 1.472, respectively. For the experimental data, the equation gave a correlation ratio of 0.99. The equation accounts reasonably well for the adsorption of Al by particulates from seven other streams. In applying the equation, it must be borne in mind that the desorption kinetics of Al depend on pH, and rapid reversibility (<15min) can only be assumed for pHor=10%) of total monomeric Al. PMID:15092454

  11. Fuzzy Multicriteria Ranking of Aluminium Coating Methods

    NASA Astrophysics Data System (ADS)

    Batzias, A. F.

    2007-12-01

    This work deals with multicriteria ranking of aluminium coating methods. The alternatives used are: sulfuric acid anodization, A1; oxalic acid anodization, A2; chromic acid anodization, A3; phosphoric acid anodization, A4; integral color anodizing, A5; chemical conversion coating, A6; electrostatic powder deposition, A7. The criteria used are: cost of production, f1; environmental friendliness of production process, f2; appearance (texture), f3; reflectivity, f4; response to coloring, f5; corrosion resistance, f6; abrasion resistance, f7; fatigue resistance, f8. Five experts coming from relevant industrial units set grades to the criteria vector and the preference matrix according to a properly modified Delphi method. Sensitivity analysis of the ranked first alternative A1 against the `second best', which was A3 at low and A7 at high resolution levels proved that the solution is robust. The dependence of anodized products quality on upstream processes is presented and the impact of energy price increase on industrial cost is discussed.

  12. Improving Efficiency of Aluminium Sacrificial Anode Using Cold Work Process

    NASA Astrophysics Data System (ADS)

    Asmara, Y. P.; Siregar, J. P.; Tezara, C.; Ann, Chang Tai

    2016-02-01

    Aluminium is one of the preferred materials to be used as sacrificial anode for carbon steel protection. The efficiency of these can be low due to the formation of oxide layer which passivate the anodes. Currently, to improve its efficiency, there are efforts using a new technique called surface modifications. The objective of this research is to study corrosion mechanism of aluminium sacrificial anode which has been processed by cold work. The cold works are applied by reducing the thickness of aluminium sacrificial anodes at 20% and 40% of thickness reduction. The cathodic protection experiments were performed by immersion of aluminium connected to carbon steel cylinder in 3% NaCl solutions. Visual inspections using SEM had been conducted during the experiments and corrosion rate data were taken in every week for 8 weeks of immersion time. Corrosion rate data were measured using weight loss and linear polarization technique (LPR). From the results, it is observed that cold worked aluminium sacrificial anode have a better corrosion performance. It shows higher corrosion rate and lower corrosion potential. The anodes also provided a long functional for sacrificial anode before it stop working. From SEM investigation, it is shown that cold works have changed the microstructure of anodes which is suspected in increasing corrosion rate and cause de-passivate of the surface anodes.

  13. Corrosion of aluminium metal in OPC- and CAC-based cement matrices

    SciTech Connect

    Kinoshita, Hajime; Swift, Paul; Utton, Claire; Carro-Mateo, Beatriz; Collier, Nick; Milestone, Neil

    2013-08-15

    Corrosion of aluminium metal in ordinary Portland cement (OPC) based pastes produces hydrogen gas and expansive reaction products causing problems for the encapsulation of aluminium containing nuclear wastes. Although corrosion of aluminium in cements has been long known, the extent of aluminium corrosion in the cement matrices and effects of such reaction on the cement phases are not well established. The present study investigates the corrosion reaction of aluminium in OPC, OPC-blast furnace slag (BFS) and calcium aluminate cement (CAC) based systems. The total amount of aluminium able to corrode in an OPC and 4:1 BFS:OPC system was determined, and the correlation between the amount of calcium hydroxide in the system and the reaction of aluminium obtained. It was also shown that a CAC-based system could offer a potential matrix to incorporate aluminium metal with a further reduction of pH by introduction of phosphate, producing a calcium phosphate cement.

  14. Ternary rare-earth iron arsenides RE12Fe57.5As41 (RE = La, Ce).

    PubMed

    Stoyko, Stanislav S; Blanchard, Peter E R; Mar, Arthur

    2010-03-01

    The rare-earth iron arsenides RE(12)Fe(57.5)As(41) (RE = La, Ce) have been prepared by direct reactions of the elements in the presence of a Sn flux. Analysis of single-crystal X-ray diffraction data reveals that they adopt a new orthorhombic structure type (Pearson symbol oP236, space group Pmmn, Z = 2; a = 10.8881(9) A, b = 25.753(2) A, c = 12.5436(10) A for RE = La; a = 10.8376(8) A, b = 25.639(2) A, c = 12.4701(9) A for RE = Ce). In this metal-rich arsenide, the complex three-dimensional network (derived from 4 RE, 24 Fe, and 17 As sites) can be described as being built from unusual wavelike layers of connected As-centered trigonal prisms. Five of the Fe sites are partially occupied. The electronic structure of these compounds was probed through core-line X-ray photoelectron spectra. Magnetic susceptibility measurements indicated ferromagnetic ordering at T(C) = 125 and 95 K for the La and Ce compounds, respectively. Electrical resistivity measurements on single crystals of Ce(12)Fe(57.5)As(41) showed metallic behavior with a prominent transition that coincides closely with the ferromagnetic ordering temperature. PMID:20128600

  15. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

    SciTech Connect

    Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya

    2015-10-15

    Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

  16. Stimulation of eryptosis by aluminium ions

    SciTech Connect

    Niemoeller, Olivier M.; Kiedaisch, Valentin; Dreischer, Peter; Wieder, Thomas; Lang, Florian . E-mail: florian.lang@uni-tuebingen.de

    2006-12-01

    Aluminium salts are utilized to impede intestinal phosphate absorption in chronic renal failure. Toxic side effects include anemia, which could result from impaired formation or accelerated clearance of circulating erythrocytes. Erythrocytes may be cleared secondary to suicidal erythrocyte death or eryptosis, which is characterized by cell shrinkage and exposure of phosphatidylserine (PS) at the erythrocyte surface. As macrophages are equipped with PS receptors, they bind, engulf and degrade PS-exposing cells. The present experiments have been performed to explore whether Al{sup 3+} ions trigger eryptosis. The PS exposure was estimated from annexin binding and cell volume from forward scatter in FACS analysis. Exposure to Al{sup 3+} ions ({>=} 10 {mu}M Al{sup 3+} for 24 h) indeed significantly increased annexin binding, an effect paralleled by decrease of forward scatter at higher concentrations ({>=} 30 {mu}M Al{sup 3+}). According to Fluo3 fluorescence Al{sup 3+} ions ({>=} 30 {mu}M for 3 h) increased cytosolic Ca{sup 2+} activity. Al{sup 3+} ions ({>=} 10 {mu}M for 24 h) further decreased cytosolic ATP concentrations. Energy depletion by removal of glucose similarly triggered annexin binding, an effect not further enhanced by Al{sup 3+} ions. The eryptosis was paralleled by release of hemoglobin, pointing to loss of cell membrane integrity. In conclusion, Al{sup 3+} ions decrease cytosolic ATP leading to activation of Ca{sup 2+}-permeable cation channels, Ca{sup 2+} entry, stimulation of cell membrane scrambling and cell shrinkage. Moreover, Al{sup 3+} ions lead to loss of cellular hemoglobin, a feature of hemolysis. Both effects are expected to decrease the life span of circulating erythrocytes and presumably contribute to the development of anemia during Al{sup 3+} intoxication.

  17. IEC 61267: Feasibility of type 1100 aluminium and a copper/aluminium combination for RQA beam qualities.

    PubMed

    Leong, David L; Rainford, Louise; Zhao, Wei; Brennan, Patrick C

    2016-01-01

    In the course of performance acceptance testing, benchmarking or quality control of X-ray imaging systems, it is sometimes necessary to harden the X-ray beam spectrum. IEC 61267 specifies materials and methods to accomplish beam hardening and, unfortunately, requires the use of 99.9% pure aluminium (Alloy 1190) for the RQA beam quality, which is expensive and difficult to obtain. Less expensive and more readily available filters, such as Alloy 1100 (99.0% pure) aluminium and copper/aluminium combinations, have been used clinically to produce RQA series without rigorous scientific investigation to support their use. In this paper, simulation and experimental methods are developed to determine the differences in beam quality using Alloy 1190 and Alloy 1100. Additional simulation investigated copper/aluminium combinations to produce RQA5 and outputs from this simulation are verified with laboratory tests using different filter samples. The results of the study demonstrate that although Alloy 1100 produces a harder beam spectrum compared to Alloy 1190, it is a reasonable substitute. A combination filter of 0.5 mm copper and 2 mm aluminium produced a spectrum closer to that of Alloy 1190 than Alloy 1100 with the added benefits of lower exposures and lower batch variability. PMID:26776501

  18. Modelling of micro- and macrosegregation for industrial multicomponent aluminium alloys

    NASA Astrophysics Data System (ADS)

    Ellingsen, K.; Mortensen, D.; M'Hamdi, M.

    2015-06-01

    Realistic predictions of macrosegregation formation during casting of aluminium alloys requires an accurate modeling of solute microsegregation accounting for multicomponent phase diagrams and secondary phase formation. In the present work, the stand alone Alstruc model, a microsegregation model for industrial multicomponent aluminium alloys, is coupled with the continuum model ALSIM which calculates the macroscopic transport of mass, enthalpy, momentum, and solutes as well as stresses and deformation during solidification of aluminium. Alstruc deals with multicomponent alloys accounting for temperature dependent partition coefficients, liquidus slopes and the precipitation of secondary phases. The challenge associated with computation of microsegregation for multicomponent alloys is solved in Alstruc by approximating the phase diagram data by simple, analytical expressions which allows for a CPU-time efficient coupling with the macroscopic transport model. In the present work, the coupled model has been applied in a study of macrosegregation including thermal and solutal convection, solidification shrinkage and surface exudation on an industrial DC-cast billet.

  19. Synthesis and characterization of a new aluminium-based compound.

    PubMed

    Pascual-Cosp, José; Artiaga, Ramón; Corpas-Iglesias, Francisco; Benítez-Guerrero, Mónica

    2009-08-28

    A new aluminium polynuclear crystalline species, Al(13)(OH)(30)(H(2)O)(15)Cl(9) has been synthesized and characterized. It is a particular case of the Al(13)(OH)(30-y)(H(2)O)(18-x)Cl(9) x zH(2)O family. It has been obtained from aluminium waste cans treated with HCl solution in strong acid media, followed by an ageing period. The crystalline structure of the complex was determined by XRD spectroscopy. Twelve reflections were found and indexed with the DICVOL04 software. Morphologically, a flattened preferred orientation was observed by SEM and FESEM. The chemical structure was studied by several absorption spectroscopy techniques: FTIR, ATR-FTIR and Raman dispersion spectroscopy. The coordination of the aluminium nuclei was determined by Al-MAS-NMR. Only octahedral sites were observed. Thermal characterization of the compound was performed by evolved gas analysis (EGA) coupled to simultaneous TGA-DSC. PMID:19655063

  20. Different Approach to the Aluminium Oxide Topography Characterisation

    SciTech Connect

    Poljacek, Sanja Mahovic; Gojo, Miroslav; Raos, Pero; Stoic, Antun

    2007-04-07

    Different surface topographic techniques are being widely used for quantitative measurements of typical industrial aluminium oxide surfaces. In this research, specific surface of aluminium oxide layer on the offset printing plate has been investigated by using measuring methods which have previously not been used for characterisation of such surfaces. By using two contact instruments and non-contact laser profilometer (LPM) 2D and 3D roughness parameters have been defined. SEM micrographs of the samples were made. Results have shown that aluminium oxide surfaces with the same average roughness value (Ra) and mean roughness depth (Rz) typically used in the printing plate surface characterisation, have dramatically different surface topographies. According to the type of instrument specific roughness parameters should be used for defining the printing plate surfaces. New surface roughness parameters were defined in order to insure detailed characterisation of the printing plates in graphic reproduction process.

  1. Time-resolved aluminium laser-induced plasma temperature measurements

    NASA Astrophysics Data System (ADS)

    Surmick, D. M.; Parigger, C. G.

    2014-11-01

    We seek to characterize the temperature decay of laser-induced plasma near the surface of an aluminium target from laser-induced breakdown spectroscopy measurements of aluminium alloy sample. Laser-induced plasma are initiated by tightly focussing 1064 nm, nanosecond pulsed Nd:YAG laser radiation. Temperatures are inferred from aluminium monoxide spectra viewed at systematically varied time delays by comparing experimental spectra to theoretical calculations with a Nelder Mead algorithm. The temperatures are found to decay from 5173 ± 270 to 3862 ± 46 Kelvin from 10 to 100 μs time delays following optical breakdown. The temperature profile along the plasma height is also inferred from spatially resolved spectral measurements and the electron number density is inferred from Stark broadened Hβ spectra.

  2. Aluminium toxicity in the rat liver and brain

    NASA Astrophysics Data System (ADS)

    Yumoto, S.; Ohashi, H.; Nagai, H.; Kakimi, S.; Ishikawa, A.; Kobayashi, K.; Ogawa, Y.; Ishii, K.

    1993-04-01

    To investigate the etiology of Alzheimer's disease, we examined the brain and liver tissue uptake of aluminium 5-75 days after aluminium injection into healthy rats. Ten days after the last injection, Al was detected in the brain and the brain cell nuclei by particle-induced X-ray emission (PIXE) analysis. Al was also demonstrated in the liver and the liver cell nuclei by PIXE analysis and electron energy loss spectrometry (EELS). The morphological changes of the rat brain examined 75 days after the injection were similar to those which have been reportedly observed in the brain of patients with Alzheimer's disease. These results support the theory that Alzheimer's disease is caused by irreversible accumulation of aluminium in the brain, as well as in the nuclei of brain cells.

  3. Comparative studies of the scanning tunneling spectra in cuprate and iron-arsenide superconductors

    NASA Astrophysics Data System (ADS)

    Yeh, N.-C.; Teague, M. L.; Beyer, A. D.; Shen, B.; Wen, H.-H.

    2012-12-01

    We report scanning tunneling spectroscopic studies of cuprate and iron-arsenic superconductors, including YBa2Cu3O7-δ (Y-123, Tc = 93 K), Sr0.9La0.1CuO2 (La-112, Tc = 43 K), and the “122” compounds Ba(Fe1-xCox)2As2 (Co-122 with x = 0.06, 0.08, 0.12 for Tc = 14, 24, 20 K). In zero field (H = 0), spatially homogeneous coherence peaks at energies ω = ± ΔSC flanked by spectral “shoulders” at ±Δeff are found in hole-type Y-123. In contrast, only a pair of spatially homogeneous peaks is seen in electron-type La-112 at ± Δeff. For H > 0, pseudogap (ΔPG) features are revealed inside the vortices, with ΔPG = [(Δeff)2-(ΔSC)2]1/2 > ΔSC in Y-123 and ΔPG < ΔSC in La-112, suggesting that the physical origin of ΔPG is a competing order coexisting with superconductivity. Additionally, Fourier transformation (FT) of the Y-123 spectra exhibits two types of spectral peaks, one type is associated with ω-dependent quasiparticle interference (QPI) wave-vectors and the other consists of ω-independent wave-vectors due to competing orders and (π,π) magnetic resonances. For the multi-band Co-122 compounds, two-gap superconductivity is found for all doping levels. Magnetic resonant modes that follow the temperature dependence of the superconducting gaps are also identified. These findings, together with the ω- and x-dependent QPI spectra, are consistent with a sign-changing s-wave pairing symmetry in the Co-122 iron arsenides. Our comparative studies suggest that the commonalities among the cuprate and the ferrous superconductors include the proximity to competing orders, antiferromagnetic (AFM) spin fluctuations and magnetic resonances in the superconducting (SC) state, and the unconventional pairing symmetries with sign-changing order parameters on different parts of the Fermi surface.

  4. Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Vanderhoef, Laura R.

    Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

  5. Characterization of solar cells for space applications. volume 14: electrical characteristics of hughes liquid phase epitaxy gallium arsenide solar cells as a function of intensity, temperature and irradiation

    SciTech Connect

    Anspaugh, B.E.; Downing, R.G.; Miyahira, T.F.; Weiss, R.S.

    1981-11-01

    Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.

  6. Characterization of solar cells for space applications. Volume 14: Electrical characteristics of Hughes liquid phase epitaxy gallium arsenide solar cells as a function of intensity, temperature and irradiation

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

    1981-01-01

    Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.

  7. Laser micro welding of copper and aluminium using filler materials

    NASA Astrophysics Data System (ADS)

    Esser, Gerd; Mys, Ihor; Schmidt, Michael H.

    2004-10-01

    The most evident trend in electronics production is towards miniaturization. Regarding the materials involved, another trend can be observed: intelligent combinations of different materials. One example is the combination of copper and aluminium. Copper is the material of choice for electronic packaging applications due to its superior electrical and thermal conductivity. On the other hand, aluminium offers technical and economical advantages with respect to cost and component weight -- still providing thermal and electrical properties acceptable for numerous applications. Especially for high volume products, the best solution often seems to be a combination of both materials. This fact raises the question of joining copper and aluminium. With respect to miniaturization laser micro welding is a very promising joining technique. Unfortunately, the metallurgical incompatibility of copper and aluminium easily results in the formation of brittle intermetallic phases and segregations during laser welding, thus generating an unacceptable quality of the joints. This paper presents investigations on enhancing the quality during laser micro welding of copper and aluminium for applications in electronics production. In order to eliminate the formation of brittle intermetallic phases, the addition of a filter material in form of a foil has been investigated. It can be shown that the addition of pure metals such as nickel and especially silver significantly reduces the occurrence of brittle phases in the joining area and therefore leads to an increase in welding quality. The proper control of the volume fractions of copper, aluminium and filler material in the melting zone helps to avoid materials segregation and reduces residual stress, consequently leading to a reduction of crack affinity and a stabilization of the mechanical and electrical properties.

  8. Carbon treated commercial aluminium alloys as anodes for aluminium-air batteries in sodium chloride electrolyte

    NASA Astrophysics Data System (ADS)

    Pino, M.; Herranz, D.; Chacón, J.; Fatás, E.; Ocón, P.

    2016-09-01

    An easy treatment based in carbon layer deposition into aluminium alloys is presented to enhance the performance of Al-air primary batteries with neutral pH electrolyte. The jellification of aluminate in the anode surface is described and avoided by the carbon covering. Treated commercial Al alloys namely Al1085 and Al7475 are tested as anodes achieving specific capacities above 1.2 Ah g-1vs 0.5 Ah g-1 without carbon covering. The influence of the binder proportion in the treatment as well as different carbonaceous materials, Carbon Black, Graphene and Pyrolytic Graphite are evaluated as candidates for the covering. Current densities of 1-10 mA cm-2 are measured and the influence of the alloy explored. A final battery design of 4 cells in series is presented for discharges with a voltage plateau of 2 V and 1 Wh g-1 energy density.

  9. Accumulation of Aluminium and Physiological Status of Tree Foliage in the Vicinity of a Large Aluminium Smelter

    PubMed Central

    Wannaz, E. D.; Rodriguez, J. H.; Wolfsberger, T.; Carreras, H. A.; Pignata, M. L.; Fangmeier, A.; Franzaring, J.

    2012-01-01

    A pollution gradient was observed in tree foliage sampled in the vicinity of a large aluminium production facility in Patagonia (Argentina). Leaves of Eucalyptus rostrata, and Populus hybridus and different needle ages of Pinus spec. were collected and concentrations of aluminium (Al) and sulphur (S) as well as physiological parameters (chlorophyll and lipid oxidation products) were analyzed. Al and S concentrations indicate a steep pollution gradient in the study showing a relationship with the physiological parameters in particular membrane lipid oxidation products. The present study confirms that aluminium smelting results in high Al and sulphur deposition in the study area, and therefore further studies should be carried out taking into account potentially adverse effects of these compounds on human and ecosystem health. PMID:22654642

  10. Accumulation of aluminium and physiological status of tree foliage in the vicinity of a large aluminium smelter.

    PubMed

    Wannaz, E D; Rodriguez, J H; Wolfsberger, T; Carreras, H A; Pignata, M L; Fangmeier, A; Franzaring, J

    2012-01-01

    A pollution gradient was observed in tree foliage sampled in the vicinity of a large aluminium production facility in Patagonia (Argentina). Leaves of Eucalyptus rostrata, and Populus hybridus and different needle ages of Pinus spec. were collected and concentrations of aluminium (Al) and sulphur (S) as well as physiological parameters (chlorophyll and lipid oxidation products) were analyzed. Al and S concentrations indicate a steep pollution gradient in the study showing a relationship with the physiological parameters in particular membrane lipid oxidation products. The present study confirms that aluminium smelting results in high Al and sulphur deposition in the study area, and therefore further studies should be carried out taking into account potentially adverse effects of these compounds on human and ecosystem health. PMID:22654642

  11. Synthesis and structural, magnetic, thermal, and transport properties of several transition metal oxides and arsenides

    NASA Astrophysics Data System (ADS)

    Das, Supriyo

    Several transition metal oxides and arsenides have been synthesized and their magnetic, thermal, structural, and transport properties have been studied in this thesis. Magnetically pure spinel compound LiV2O4 is a rare d-electron heavy fermion. The presence of small concentrations of magnetic defects, which are produced by the crystal defects in the spinel structure, strongly affect the physical properties of LiV2O 4. The phase relations in the Li2O-V2O3-V 2O5 ternary system at 700°C for compositions in equilibrium with LiV2O4 are reported. This study clarified the synthesis conditions under which low and high magnetic defect concentrations can be obtained within the spinel structure of LiV2O4. We confirmed that the LiV2O4 phase can be obtained containing low (0.006 mol%) to high (0.83 mol%) magnetic defect concentrations ndefect and with consistently high magnetic defect spin S values between 3 and 6.5. The high ndefect values were obtained in the LiV 2O4 phase in equilibrium with V2O3, Li3VO4, or LiVO2 and the low values in the LiV2O4 phase in equilibrium with V3O 5. A model is suggested to explain this correlation. We grew single crystals of LiV2O4 using Li3VO4 as a self-flux. The magnetic susceptibility of some as-grown crystals show a Curie-like upturn at low temperatures, showing the presence of magnetic defects within the spinel structure. The magnetic defects could be removed in some of the crystals by annealing them at 700°C. A very high specific heat coefficient gamma = 450 mJ/(mol K2) was obtained at a temperature of 1.8 K for a crystal containing a magnetic defect concentration ndefect = 0.5 mol%. A crystal with ndefect = 0.01 mol% showed a residual resistivity ratio of 50. To search for superstructure peaks or other evidence of spatial correlations in the arrangement of the crystal defects with in the crystal structure which give rise to magnetic defects, we carried out high-energy x-ray diffraction studies on LiV2O4 single crystals. Entire

  12. A Numerical Analysis of the Resistance and Stiffness of the Aluminium and Concrete Composite Beam

    NASA Astrophysics Data System (ADS)

    Polus, Łukasz; Szumigała, Maciej

    2015-03-01

    In this paper a numerical analysis of the resistance and stiffness of the aluminium and concrete composite beam is presented. Composite aluminium and concrete structures are quite new and they have not been thoroughly tested. Composite structures have a lot of advantages. The composite aluminium and concrete beam is more corrosion-resistant, fire-resistant and stiff than the aluminium beam. The contemporary idea of sustainable buildings relies on new solutions which are more environmentally friendly. Aluminium is lighter and more resistant to corrosion than steel, which is often used in composite structures.

  13. Aluminium in food and daily dietary intake estimate in Greece.

    PubMed

    Bratakos, Sotirios M; Lazou, Andriana E; Bratakos, Michael S; Lazos, Evangelos S

    2012-01-01

    Aluminium content of foods, as well as dietary aluminium intake of the Greek adult population, was determined using graphite furnace atomic absorption spectroscopy after microwave sample digestion and food consumption data. Al content ranged from 0.02 to 741.2 mg kg⁻¹, with spices, high-spice foods, cereal products, vegetables and pulses found to be high in Al. Differences in aluminium content were found between different food classes from Greece and those from some other countries. Aluminium intake of Greeks is 3.7 mg/day based on DAFNE Food Availability Databank, which uses data from the Household Budget Surveys. On the other hand, according to the per capita food consumption data collected by both national and international organisations, Al intake is 6.4 mg day⁻¹. Greek adult population has an Al intake lower than the Provisional Tolerable Weekly Intake of 7 mg kg⁻¹ body weight established by EFSA. Cereals and vegetables are the main Al contributors, providing 72.4% of daily intake. PMID:24779693

  14. Porphyry copper enrichment linked to excess aluminium in plagioclase

    NASA Astrophysics Data System (ADS)

    Williamson, B. J.; Herrington, R. J.; Morris, A.

    2016-03-01

    Porphyry copper deposits provide around 75%, 50% and 20% of world copper, molybdenum and gold, respectively. The deposits are mainly centred on calc-alkaline porphyry magmatic systems in subduction zone settings. Although calc-alkaline magmas are relatively common, large porphyry copper deposits are extremely rare and increasingly difficult to discover. Here, we compile existing geochemical data for magmatic plagioclase, a dominant mineral in calc-alkaline rocks, from fertile (porphyry-associated) and barren magmatic systems worldwide, barren examples having no associated porphyry deposit. We show that plagioclase from fertile systems is distinct in containing `excess’ aluminium. This signature is clearly demonstrated in a case study carried out on plagioclase from the fertile La Paloma and Los Sulfatos copper porphyry systems in Chile. Further, the presence of concentric zones of high excess aluminium suggests its incorporation as a result of magmatic processes. As excess aluminium has been linked to high melt water contents, the concentric zones may record injections of hydrous fluid or fluid-rich melts into the sub-porphyry magma chamber. We propose that excess aluminium may exclude copper from plagioclase, so enriching the remaining melts. Furthermore, this chemical signature can be used as an exploration indicator for copper porphyry deposits.

  15. Molecular Characterization of Aluminium (aluminum) Tolerance in Rye

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Aluminium (Al) toxicity, affecting around half of the world’s arable land, severely hinders the ability of crop plants to utilize moisture and nutrients by restricting root growth and function. Among the cultivated cereals, rye is the most Al-tolerant and represents an important potential source of ...

  16. On the anodic aluminium oxide refractive index of nanoporous templates

    NASA Astrophysics Data System (ADS)

    Hierro-Rodriguez, A.; Rocha-Rodrigues, P.; Valdés-Bango, F.; Alameda, J. M.; Jorge, P. A. S.; Santos, J. L.; Araujo, J. P.; Teixeira, J. M.; Guerreiro, A.

    2015-11-01

    In the present study, we have determined the intrinsic refractive index of anodic aluminium oxide, which is originated by the formation of nanoporous alumina templates. Different templates have been fabricated by the conventional two-step anodization procedure in oxalic acid. Their porosities were modified by chemical wet etching allowing the tuning of their effective refractive indexes (air-filled nanopores  +  anodic aluminium oxide). By standard spectroscopic light transmission measurements, the effective refractive index for each different template was extracted in the VIS-NIR region. The determination of the intrinsic anodic aluminium oxide refractive index was performed by using the Maxwell-Garnett homogenization theory. The results are coincident for all the fabricated samples. The obtained refractive index (~1.55) is quite lower (~22%) than the commonly used Al2O3 handbook value (~1.75), showing that the amorphous nature of the anodic oxide structure strongly conditions its optical properties. This difference is critical for the correct design and modeling of optical plasmonic metamaterials based on anodic aluminium oxide nanoporous templates.

  17. The effects of ingested aluminium on brain cytochrome oxidase activity.

    PubMed

    Mohan, N; Alleyne, T; Adogwa, A

    2009-11-01

    Aluminium has a unique combination of physical and chemical properties which has enabled man to put this metal to very wide and varied use. However prolonged exposure to aluminium ions may lead to adverse health effects. In this study, we evaluated the effects of dietary aluminium on the protein composition and the intrinsic activity of cytochrome oxidase (COX) for brain mitochondria. New Zealand white rabbits were maintained on a diet of commercial rabbit pellets and distilled water for a period of 12 weeks. For the experimental group, AlCl3, 330 mg/kg/L was added to the drinking water. When compared to the control, mitochondria isolated from the brains of the AICl3 fed rabbits showed no change in Km but an approximate 35% decrease in both the low and high affinity Vmax values. Also, whereas the protein composition of the mitochondria from both sources appeared to be normal, isolation of highly purified COX proved to be difficult and for the AlCl3 fed rabbits, a number of the enzyme's low molecular weight subunits were absent. These results appear to confirm a relationship between long term aluminium consumption and low brain COX activity; they further suggest that an altered COX structure may be the cause of the low enzymic activity. PMID:20441059

  18. Aluminium hydride: a reversible material for hydrogen storage.

    PubMed

    Zidan, Ragaiy; Garcia-Diaz, Brenda L; Fewox, Christopher S; Stowe, Ashley C; Gray, Joshua R; Harter, Andrew G

    2009-07-01

    Aluminium hydride has been synthesized electrochemically, providing a synthetic route which closes a reversible cycle for regeneration of the material and bypasses expensive thermodynamic costs which have precluded AlH(3) from being considered as a H(2) storage material. PMID:19557259

  19. LASERS IN MEDICINE: Two-photon excitation of aluminium phthalocyanines

    NASA Astrophysics Data System (ADS)

    Meshalkin, Yu P.; Alfimov, E. E.; Vasil'ev, N. E.; Denisov, A. N.; Makukha, V. K.; Ogirenko, A. P.

    1999-12-01

    A demonstration is given of the feasibility of two-photon excitation of aluminium phthalocyanine and of the pharmaceutical preparation 'Fotosens', used in photodynamic therapy. The excitation source was an Nd:YAG laser emitting at the 1064 nm wavelength. The spectra of the two-photon-excited luminescence were obtained and the two-photon absorption cross sections were determined.

  20. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    SciTech Connect

    ISLAM,N.E.; SCHAMILOGLU,E.; MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; JOSHI,R.P.

    2000-05-30

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of {approximately} 10{sup 4} shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10{sup 8} shots for electro-optic drivers. Much effort is currently

  1. The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Anikara, R.

    1972-01-01

    The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

  2. A gallium-arsenide digital phase shifter for clock and control signal distribution in high-speed digital systems

    NASA Technical Reports Server (NTRS)

    Fouts, Douglas J.

    1992-01-01

    The design, implementation, testing, and applications of a gallium-arsenide digital phase shifter and fan-out buffer are described. The integrated circuit provides a method for adjusting the phase of high-speed clock and control signals in digital systems, without the need for pruning cables, multiplexing between cables of different lengths, delay lines, or similar techniques. The phase of signals distributed with the described chip can be dynamically adjusted in eight different steps of approximately 60 ps per step. The IC also serves as a fan-out buffer and provides 12 in-phase outputs. The chip is useful for distributing high-speed clock and control signals in synchronous digital systems, especially if components are distributed over a large physical area or if there is a large number of components.

  3. An experiment to test the viability of a gallium-arsenide cathode in a SRF electron gun

    SciTech Connect

    Kewisch,J.; Ben-Zvi, I.; Rao, T.; Burrill, A.; Pate, D.; Wu, Q.; Todd, R.; Wang, E.; Bluem, H.; Holmes, D.; Schultheiss, T.

    2009-05-04

    Strained gallium arsenide cathodes are used in electron guns for the production of polarized electrons. In order to have a sufficient quantum efficiency lifetime of the cathode the vacuum in the gun must be 10{sup -11} Torr or better, so that the cathode is not destroyed by ion back bombardment or through contamination with residual gases. All successful polarized guns are DC guns, because such vacuum levels can not be obtained in normal conducting RF guns. A superconductive RF gun may provide a sufficient vacuum level due to cryo-pumping of the cavity walls. We report on the progress of our experiment to test such a gun with normal GaAs-Cs crystals.

  4. Aluminium in allergen-specific subcutaneous immunotherapy--a German perspective.

    PubMed

    Kramer, Matthias F; Heath, Matthew D

    2014-07-16

    We are living in an "aluminium age" with increasing bioavailability of the metal for approximately 125 years, contributing significantly to the aluminium body burden of humans. Over the course of life, aluminium accumulates and is stored predominantly in the lungs, bones, liver, kidneys and brain. The toxicity of aluminium in humans is briefly summarised, highlighting links and possible causal relationships between a high aluminium body burden and a number of neurological disorders and disease states. Aluminium salts have been used as depot-adjuvants successfully in essential prophylactic vaccinations for almost 100 years, with a convincing positive benefit-risk assessment which remains unchanged. However, allergen-specific immunotherapy commonly consists of administering a long-course programme of subcutaneous injections using preparations of relevant allergens. Regulatory authorities currently set aluminium limits for vaccines per dose, rather than per treatment course. Unlike prophylactic vaccinations, numerous injections with higher proportions of aluminium-adjuvant per injection are applied in subcutaneous immunotherapy (SCIT) and will significantly contribute to a higher cumulative life dose of aluminium. While the human body may cope robustly with a daily aluminium overload from the environment, regulatory cumulative threshold values in immunotherapy need further addressing. Based on the current literature, predisposing an individual to an unusually high level of aluminium, such as through subcutaneous immunotherapy, has the potential to form focal accumulations in the body with the propensity to exert forms of toxicity. Particularly in relation to longer-term health effects, the safety of aluminium adjuvants in immunotherapy remains unchallenged by health authorities - evoking the need for more consideration, guidance, and transparency on what is known and not known about its safety in long-course therapy and what measures can be taken to prevent or

  5. Performance of commercial aluminium alloys as anodes in gelled electrolyte aluminium-air batteries

    NASA Astrophysics Data System (ADS)

    Pino, M.; Chacón, J.; Fatás, E.; Ocón, P.

    2015-12-01

    The evaluation of commercial aluminium alloys, namely, Al2024, Al7475 and Al1085, for Al-air batteries is performed. Pure Al cladded Al2024 and Al7475 are also evaluated. Current rates from 0.8 mA cm-2 to 8.6 mA cm-2 are measured in a gel Al-air cell composed of the commercial alloy sample, a commercial air-cathode and an easily synthesizable gelled alkaline electrolyte. The influence of the alloying elements and the addition to the electrolyte of ZnO and ZnCl2, as corrosion inhibitors is studied and analysed via EDX/SEM. Specific capacities of up to 426 mAh/g are obtained with notably flat potential discharges of 1.3-1.4 V. The competition between self-corrosion and oxidation reactions is also discussed, as well as the influence of the current applied on that process. Al7475 is determined to have the best behaviour as anode in Al-air primary batteries, and cladding process is found to be an extra protection against corrosion at low current discharges. Conversely, Al1085 provided worse results because of an unfavourable metallic composition.

  6. Aluminium content of foods originating from aluminium-containing food additives.

    PubMed

    Ogimoto, Mami; Suzuki, Kumi; Haneishi, Nahoko; Kikuchi, Yuu; Takanashi, Mayu; Tomioka, Naoko; Uematsu, Yoko; Monma, Kimio

    2016-09-01

    Aluminium (Al) levels of 90 food samples were investigated. Nineteen samples contained Al levels exceeding the tolerable weekly intake (TWI) for young children [body weight (bw): 16 kg] when consuming two servings/week. These samples were purchased multiple times at specific intervals and were evaluated for Al levels. Al was detected in 27 of the 90 samples at levels ranging from 0.01 (limit of quantitation) to 1.06 mg/g. Of these, the Al intake levels in two samples (cookie and scone mix, 1.3 and 2 mg/kg bw/week, respectively) exceeded the TWI as established by European Food Safety Authority, although the level in the scone mix was equivalent to the provisional TWI (PTWI) as established by Joint Food and Agriculture Organization of the United Nations/World Health Organization Expert Committee on Food Additives. The Al levels markedly decreased in 14 of the 19 samples with initially high Al levels. These results indicated reductions in the Al levels to below the PTWI limits in all but two previously identified food samples. PMID:27092423

  7. Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

    NASA Astrophysics Data System (ADS)

    Kallaher, Raymond L.

    This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

  8. Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

    SciTech Connect

    Lovygin, M. V. Borgardt, N. I.; Seibt, M.; Kazakov, I. P.; Tsikunov, A. V.

    2015-12-15

    The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

  9. Histopathological changes in cases of aluminium phosphide poisoning.

    PubMed

    Sinha, U S; Kapoor, A K; Singh, A K; Gupta, A; Mehrotra, Ravi

    2005-04-01

    Of a total of 205 poisoning deaths in our hospital in 2003, 83 cases were due to Aluminium phosphide poisoning and were further analyzed. Most vulnerable age group was 21-40 years and M:F ratio was 2:1. On naked eye examination, almost all the vital organs were found to be congested. On microscopic study, the liver showed central venous congestion, degeneration, haemorrhage, sinusoidal dilation, bile stasis, centrilobular necrosis, Kupffer cell hyperplasia, infiltration by mononuclear cells and fatty change. Microscopy of the lungs revealed alveolar thickening, oedema, dilated capillaries, collapsed alveoli and haemorrhage. In the kidney, changes were degeneration, infiltration, tubular dilation and cloudy swelling. Changes in the brain included congestion and coagulative necrosis and in the stomach, congestion and haemorrhage. Easy availability of this cheap and highly toxic substance was responsible for the sudden spurt of poisoning with aluminium phosphide. PMID:16758658

  10. Experimental evidence for a dynamical crossover in liquid aluminium.

    PubMed

    Demmel, F; Fraile, A; Szubrin, D; Pilgrim, W-C; Morkel, C

    2015-11-18

    The temperature dependence of the dynamic structure factor at next-neighbour distances has been investigated for liquid aluminium. This correlation function is a sensitive parameter for changes in the local environment and its Fourier transform was measured in a coherent inelastic neutron scattering experiment. The zero frequency amplitude decreases in a nonlinear way and indicates a change in dynamics around 1.4 ∙ Tmelting. From that amplitude a generalized viscosity can be derived which is a measure of local stress correlations on next-neighbour distances. The derived generalized longitudinal viscosity shows a changing slope at the same temperature range. At this temperature the freezing out of degrees of freedom for structural relaxation upon cooling sets in which can be understood as a precursor towards the solid state. That crossover in dynamics of liquid aluminium shows the same signatures as previously observed in liquid rubidium and lead, indicating an universal character. PMID:26465204