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Sample records for aluminum oxide film

  1. Plasma deposition of aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Catherine, Y.; Talebian, A.

    1988-03-01

    A plasma deposition technique for amorphous aluminum oxide films is discussed. A 450 kHz or 13.56 MHz power supply was used to generate the plasma and the deposition of the film was achieved at low plasma power using trimethyl-aluminum and carbon dioxide reactant sources. It has been found that for the low frequency plasma the growth is strongly dependent upon TMA concentration, indicating that the growth process is mass transport limited. On the other hand using the 13.56 MHz discharge results in a surface controlled growth rate. An increase in the deposition temperature up to 300° C makes the films more dense and lowers their etching rate. FTIR and ESCA measurements showed that oxidation is only completed with high CO2 concentrations and a deposition temperature above 250° C. The dielectric films were found to have a dielectric constant in the range 7.3=2-9 and a refractive index between 1.5 1.8 depending upon deposition conditions.

  2. Aluminum oxide film thickness and emittance

    SciTech Connect

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55{degrees}C) moderator for about a year. The average moderator temperature was assumed to be 30{degrees}C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 {mu}m {plus minus} 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 {mu}m {plus minus} 11%. Total hemispherical emittance is predicted to be 0.69 at 96{degrees}C, decreasing to 0.45 at 600{degrees}C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values.

  3. Aluminum oxide film thickness and emittance

    SciTech Connect

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55{degrees}C) moderator for about a year. The average moderator temperature was assumed to be 30{degrees}C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 {mu}m {plus_minus} 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 {mu}m {plus_minus} 11%. Total hemispherical emittance is predicted to be 0.69 at 96{degrees}C, decreasing to 0.45 at 600{degrees}C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values.

  4. Depression of melting point for protective aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Dreizin, E. L.; Allen, D. J.; Glumac, N. G.

    2015-01-01

    The protective aluminum oxide film naturally formed on a surface of aluminum has a thickness in the range of 3-5 nm. Its melting causes loss of its continuity, which may significantly affect the ignition and combustion processes and their relative time scales. Melting of the alumina film also plays an important role when aluminum powders are used to prepare composites and/or being sintered. This letter quantifies depression of the melting point of an alumina film based on its nano-meter thickness. A theoretical estimate is supported by experiments relying on a detected change in the optical properties of naturally oxidized aluminum particles heated in an inert environment.

  5. Electrochemical formation of a composite polymer-aluminum oxide film

    NASA Astrophysics Data System (ADS)

    Runge-Marchese, Jude Mary

    1997-10-01

    The formation of polymer films through electrochemical techniques utilizing electrolytes which include conductive polymer is of great interest to the coatings and electronics industries as a means for creating electrically conductive and corrosion resistant finishes. One of these polymers, polyamino-benzene (polyaniline), has been studied for this purpose for over ten years. This material undergoes an insulator-to-metal transition upon doping with protonic acids in an acid/base type reaction. Review of prior studies dealing with polyaniline and working knowledge of aluminum anodization has led to the development of a unique process whereby composite polymer-aluminum oxide films are formed. The basis for the process is a modification of the anodizing electrolyte which results in the codeposition of polyaniline during aluminum anodization. A second process, which incorporates electrochemical sealing of the anodic layer with polyaniline was also developed. The formation of these composite films is documented through experimental processing, and characterized by way of scientific analysis and engineering tests. Analysis results revealed the formation of unique dual phase anodic films with fine microstructures which exhibited full intrusion of the columnar aluminum oxide structure with polyaniline, indicating the polymer was deposited as the metal oxidation proceeded. An aromatic amine derivative of polyaniline with aluminum sulfate was determined to be the reaction product within the aluminum oxide phase of the codeposited films. Scientific characterization determined the codeposition process yields completely chemically and metallurgically bound composite films. Engineering studies determined the films, obtained through a single step, exhibited superior wear and corrosion resistance to conventionally anodized and sealed films processed through two steps, demonstrating the increased manufacturing process efficiency that can be realized with the modification of the

  6. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    NASA Astrophysics Data System (ADS)

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-02-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

  7. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes.

    PubMed

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-01-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials. PMID:26831759

  8. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    PubMed Central

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-01-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials. PMID:26831759

  9. Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

    PubMed

    Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

    2016-05-01

    Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures. PMID:27070754

  10. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    NASA Astrophysics Data System (ADS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  11. Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide

    SciTech Connect

    Schmidt, Benjamin W.; Sweet, William J. III; Rogers, Bridget R.; Bierschenk, Eric J.; Gren, Cameron K.; Hanusa, Timothy P.

    2010-03-15

    Metal-organic chemical vapor deposited aluminum oxide films were produced via pyrolysis of dimethylaluminum isopropoxide in a high vacuum reaction chamber in the 417-659 deg. C temperature range. Deposited films contained aluminum, oxygen, and carbon, and the carbon-to-aluminum ratio increased with increased deposition temperature. Aluminum-carbon bonding was observed in films deposited at 659 deg. C by x-ray photoelectron spectroscopy, but not in films deposited at 417 deg. C. The apparent activation energy in the surface reaction controlled regime was 91 kJ/mol. The O/Al and C/Al ratios in the deposited films were greater and less than, respectively, the ratios predicted by the stoichiometry of the precursor. Flux analysis of the deposition process suggested that the observed film stoichiometries could be explained by the participation of oxygen-containing background gases present in the reactor at its base pressure.

  12. A method to study the history of a double oxide film defect in liquid aluminum alloys

    NASA Astrophysics Data System (ADS)

    Raiszadeh, R.; Griffiths, W. D.

    2006-12-01

    Entrained double oxide films have been held responsible for reductions in mechanical properties in aluminum casting alloys. However, their behavior in the liquid metal, once formed, has not been studied directly. It has been proposed that the atmosphere entrapped in the double oxide film defect will continue to react with the liquid metal surrounding it, perhaps leading to its elimination as a significant defect. A silicon-nitride rod with a hole in one end was plunged into liquid aluminum to hold a known volume of air in contact with the liquid metal at a constant temperature. The change in the air volume with time was recorded by real-time X-ray radiography to determine the reaction rates of the trapped atmosphere with the liquid aluminum, creating a model for the behavior of an entrained double oxide film defect. The results from this experiment showed that first oxygen, and then nitrogen, was consumed by the aluminum alloy, to form aluminum oxide and aluminum nitride, respectively. The effect of adding different elements to the liquid aluminum and the effect of different hydrogen contents were also studied.

  13. Surface enhanced Raman scattering of biospecies on anodized aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Zhang, C.; Smirnov, A. I.; Hahn, D.; Grebel, H.

    2007-06-01

    Traditionally, aluminum and anodized aluminum oxide films (AAO) are not the platforms of choice for surface-enhanced raman scattering (SERS) experiments despite of the aluminum's large negative permittivity value. Here we examine the usefulness of aluminum and nanoporous alumina platforms for detecting soft biospecies ranging from bacterial spores to protein markers. We used these flat platforms to examine SERS of a model protein (cytochrome c from bovine heart tissue) and bacterial cells (spores of Bacillus subtilis ATCC13933 used as Anthrax simulant) and demonstrated clear Raman amplification.

  14. Synthesis of nanoporous activated iridium oxide films by anodized aluminum oxide templated atomic layer deposition.

    SciTech Connect

    Comstock, D. J.; Christensen, S. T.; Elam, J. W.; Pellin, M. J.; Hersam, M. C.

    2010-08-01

    Iridium oxide (IrOx) has been widely studied due to its applications in electrochromic devices, pH sensing, and neural stimulation. Previous work has demonstrated that both Ir and IrOx films with porous morphologies prepared by sputtering exhibit significantly enhanced charge storage capacities. However, sputtering provides only limited control over film porosity. In this work, we demonstrate an alternative scheme for synthesizing nanoporous Ir and activated IrOx films (AIROFs). This scheme utilizes atomic layer deposition to deposit a thin conformal Ir film within a nanoporous anodized aluminum oxide template. The Ir film is then activated by potential cycling in 0.1 M H{sub 2}SO{sub 4} to form a nanoporous AIROF. The morphologies and electrochemical properties of the films are characterized by scanning electron microscopy and cyclic voltammetry, respectively. The resulting nanoporous AIROFs exhibit a nanoporous morphology and enhanced cathodal charge storage capacities as large as 311 mC/cm{sup 2}.

  15. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  16. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance gm change, threshold voltage VT change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  17. Synthesis of iridescent Ni-containing anodic aluminum oxide films by anodization in oxalic acid

    NASA Astrophysics Data System (ADS)

    Xu, Qin; Ma, Hong-Mei; Zhang, Yan-Jun; Li, Ru-Song; Sun, Hui-Yuan

    2016-02-01

    Ni-containing anodic aluminum oxide films with highly saturated colors were synthesized using an ac electrodeposition method, and the optical and magnetic characteristics of the films were characterized. Precisely controllable color tuning could be obtained using wet-chemical etching to thin and widen the anodic aluminum oxide films pores isotropically before Ni deposition. Magnetic measurements indicate that such colored composite films not exhibit obvious easy magnetization direction. The resulted short (200 nm in length) and wide (50 nm in diameter) Ni nanowires present only fcc phase. The magnetization reversal mechanism is in good agreement with the symmetric fanning reversal mode which is discussed in detail. Such films may find applications in decoration, display and multifunctional anti-counterfeiting applications.

  18. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films.

    PubMed

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision. PMID:25273741

  19. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

    NASA Astrophysics Data System (ADS)

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

  20. Electromechanical Breakdown of Barrier-Type Anodized Aluminum Oxide Thin Films Under High Electric Field Conditions

    NASA Astrophysics Data System (ADS)

    Chen, Jianwen; Yao, Manwen; Yao, Xi

    2016-02-01

    Barrier-type anodized aluminum oxide (AAO) thin films were formed on a polished aluminum substrate via electrochemical anodization in 0.1 mol/L aqueous solution of ammonium pentaborate. Electromechanical breakdown occurred under high electric field conditions as a result of the accumulation of mechanical stress in the film-substrate system by subjecting it to rapid thermal treatment. Before the breakdown event, the electricity of the films was transported in a highly nonlinear way. Immediately after the breakdown event, dramatic cracking of the films occurred, and the cracks expanded quickly to form a mesh-like dendrite network. The breakdown strength was significantly reduced because of the electromechanical coupling effect, and was only 34% of the self-healing breakdown strength of the AAO film.

  1. Luminescence of europium-doped anode oxide films on titanium-aluminum composites

    NASA Astrophysics Data System (ADS)

    Sokol, V. A.; Pinaeva, M. M.; Gurskaya, E. A.; Stekol'Nikov, A. A.

    2000-03-01

    The luminescence of europium in anode oxide films (AOF) on titanium-aluminum film composites is investigated. It is shown that the intensity distribution in the continuous and line luminescence spectra of europium introduced into the AOF directly in the process of anodic oxidation essentially depends on the sequence of arrangement of the layers of metal films and on the temperature of their heat treatment preceding the process of anodic oxidation. It is established that the nature of the luminescence spectrum of the AOF correlates with the chronovoltammetry diagrams of anodic oxidation. Composites with a high degree of europium doping are found and methods of searching for composites for creating new materials of electronic technology are outlined.

  2. Modelling the growth process of porous aluminum oxide film during anodization

    NASA Astrophysics Data System (ADS)

    Aryslanova, E. M.; Alfimov, A. V.; Chivilikhin, S. A.

    2015-11-01

    Currently it has become important for the development of metamaterials and nanotechnology to obtain regular self-assembled structures. One such structure is porous anodic alumina film that consists of hexagonally packed cylindrical pores. In this work we consider the anodization process, our model takes into account the influence of layers of aluminum and electrolyte on the rate of growth of aluminum oxide, as well as the effect of surface diffusion. In present work we consider those effects. And as a result of our model we obtain the minimum distance between centers of alumina pores in the beginning of anodizing process.

  3. XANES studies of chromate replacements in oxide films on aluminum

    SciTech Connect

    Davenport, A.J.; Aldykiewicz, A.J. Jr.; Isaacs, H.S.; Kendig, M.W.; Mundy, A.M.

    1991-12-31

    The chemistry of conversion coatings on aluminum containing chromate and non-toxic chromate replacements has been investigated using XANES. Chromate conversion coatings contain 20% 6-valent chromium which is gradually lost on immersion in a corrosive environment. The most promising alternative coatings are those based on phosphotungstate. The chemistry of these and coatings containing Mo, V, and Mn are discussed.

  4. XANES studies of chromate replacements in oxide films on aluminum

    SciTech Connect

    Davenport, A.J.; Aldykiewicz, A.J. Jr.; Isaacs, H.S. ); Kendig, M.W. . Science Center); Mundy, A.M. )

    1991-01-01

    The chemistry of conversion coatings on aluminum containing chromate and non-toxic chromate replacements has been investigated using XANES. Chromate conversion coatings contain 20% 6-valent chromium which is gradually lost on immersion in a corrosive environment. The most promising alternative coatings are those based on phosphotungstate. The chemistry of these and coatings containing Mo, V, and Mn are discussed.

  5. Welding Phenomenon and Removal Mechanism of Aluminum-Oxide Films by Space GHTA Welding Process in Vacuum

    NASA Astrophysics Data System (ADS)

    Suita, Yoshikazu; Ekuni, Tomohide; Kamei, Misa; Tsukuda, Yoshiyuki; Terajima, Noboru; Yamashita, Masahiro; Imagawa, Kichiro; Masubuchi, Koichi

    Aluminum alloys have been widely used in constructing various space structures including the ISS (International Space Station) and launch vehicles. In order to apply the welding technology in space, welding experiments on aluminum alloy were performed using by the GHTA (Gas Hollow Tungsten Arc) welding processes using an inverter controlled DC/AC GTA welding machine in vacuum. We observed the removal mechanism of aluminum-oxide films on molten metal in detail during the welding using a high-speed video camera. As a result, it is clarified that the impact arc pressure produced by pulsed current mechanically crushes and removes aluminum-oxide films on the molten pool. This removal mechanism of aluminum-oxide films is completely different from a removal mechanism by cleaning action.

  6. Studies of aluminum oxide thin films deposited by laser ablation technique

    NASA Astrophysics Data System (ADS)

    Płóciennik, P.; Guichaoua, D.; Korcala, A.; Zawadzka, A.

    2016-06-01

    This paper presents the structural and optical investigations of the aluminum oxide nanocrystalline thin films. Investigated films were fabricated by laser ablation technique in high vacuum onto quartz substrates. The films were deposited at two different temperatures of the substrates equal to room temperature and 900 K. X-ray Diffraction spectra proved nanocrystalline character and the corundum phase of the film regardless on the substrate temperature during the deposition process. Values of the refractive indices, extinction and absorption coefficients were calculated by using Transmission and Reflection Spectroscopy in the UV-VIS-NIR range of the wavelength. Coupling Prism Method was used for films thickness estimations. Experimental measurements and theoretical calculations of the Third Harmonic Generation were also reported. Obtained results show that the lattice strain may affect obtained values of the third order nonlinear optical susceptibility.

  7. Photoluminescence emission of nanoporous anodic aluminum oxide films prepared in phosphoric acid

    PubMed Central

    2012-01-01

    The photoluminescence emission of nanoporous anodic aluminum oxide films formed in phosphoric acid is studied in order to explore their defect-based subband electronic structure. Different excitation wavelengths are used to identify most of the details of the subband states. The films are produced under different anodizing conditions to optimize their emission in the visible range. Scanning electron microscopy investigations confirm pore formation in the produced layers. Gaussian analysis of the emission data indicates that subband states change with anodizing parameters, and various point defects can be formed both in the bulk and on the surface of these nanoporous layers during anodizing. PMID:23272786

  8. Photoluminescence emission of nanoporous anodic aluminum oxide films prepared in phosphoric acid.

    PubMed

    Nourmohammadi, Abolghasem; Asadabadi, Saeid Jalali; Yousefi, Mohammad Hasan; Ghasemzadeh, Majid

    2012-01-01

    The photoluminescence emission of nanoporous anodic aluminum oxide films formed in phosphoric acid is studied in order to explore their defect-based subband electronic structure. Different excitation wavelengths are used to identify most of the details of the subband states. The films are produced under different anodizing conditions to optimize their emission in the visible range. Scanning electron microscopy investigations confirm pore formation in the produced layers. Gaussian analysis of the emission data indicates that subband states change with anodizing parameters, and various point defects can be formed both in the bulk and on the surface of these nanoporous layers during anodizing. PMID:23272786

  9. Photoluminescence emission of nanoporous anodic aluminum oxide films prepared in phosphoric acid

    NASA Astrophysics Data System (ADS)

    Nourmohammadi, Abolghasem; Asadabadi, Saeid Jalali; Yousefi, Mohammad Hasan; Ghasemzadeh, Majid

    2012-12-01

    The photoluminescence emission of nanoporous anodic aluminum oxide films formed in phosphoric acid is studied in order to explore their defect-based subband electronic structure. Different excitation wavelengths are used to identify most of the details of the subband states. The films are produced under different anodizing conditions to optimize their emission in the visible range. Scanning electron microscopy investigations confirm pore formation in the produced layers. Gaussian analysis of the emission data indicates that subband states change with anodizing parameters, and various point defects can be formed both in the bulk and on the surface of these nanoporous layers during anodizing.

  10. Rayleigh instability in polymer thin films coated in the nanopores of anodic aluminum oxide templates.

    PubMed

    Tsai, Chia-Chan; Chen, Jiun-Tai

    2014-01-14

    We study the Rayleigh instability of polystyrene (PS) thin films coated in the nanopores of anodic aluminum oxide (AAO) templates. After thermal annealing, the surface of the PS thin films undulates and the nanostructures transform from nanotubes to Rayleigh-instability-induced nanostructures (short nanorods with encapsulated air bubbles). With longer annealing times, the nanostructures further transform to nanorods with longer lengths. PS samples with two different molecular weights (24 and 100 kg/mol) are used, and their instability transformation processes are compared. The morphology diagrams of the nanostructures at different stages are also constructed to elucidate the mechanism of the morphology transformation. PMID:24380368

  11. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  12. Characterization of Monolayer Formation on Aluminum-Doped Zinc Oxide Thin Films

    SciTech Connect

    Rhodes,C.; Lappi, S.; Fischer, D.; Sambasivan, S.; Genzer, J.; Franzen, S.

    2008-01-01

    The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate are investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent plasma frequency in the mid-IR for p-polarized radiation, suggestive of the detection of a Drude plasma frequency. These studies are complemented by oxygen depletion density functional theory studies for the calculation of the charge carrier concentration and plasma frequency for bulk AZO. In addition, we report on the optical and physical properties of thin film adlayers of n-hexadecanethiol (HDT) and n-octadecanethiol (ODT) self-assembled monolayers (SAMs) on AZO surfaces using reflectance FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Our characterization of the SAM deposition onto the AZO thin film reveals a range of possible applications for this conducting metal oxide.

  13. Advantages of Oxide Films as Bases for Aluminum Pigmented Surface Coatings for Aluminum Alloys

    NASA Technical Reports Server (NTRS)

    Buzzard, R W; Mutchler, W H

    1931-01-01

    Both laboratory and weather-exposure corrosion tests showed conclusively that the protection afforded by aluminum pigmented spar varnish coatings applied to previously anodized aluminum surfaces was greatly superior to that afforded by the same coatings applied to surfaces which had simply been cleaned free from grease and not anodized.

  14. Adhesion of Poly(phenylene sulfide) Resin with Polymeric Film of Triazine Thiol on Aluminum Surface Modified by Anodic Oxidation.

    PubMed

    Chung, Eun Hyuk; Jang, Eun Kyung; Hong, Tae Eun; Kim, Jong Pil; Kim, Hyun Gyu; Jin, Jong Sung; Hyun, Myung Ho; Shin, Dong Su; Bae, Jong-Seong; Jeong, Euh Duck

    2015-01-01

    Various surface modifications have been applied to improve the adhesion properties of aluminum for the cap plate and sealing quality of electrolyte on Li ion batteries. In this study, we have tried to find the effective condition for the polymerization of triazine thiols (TT) on modified aluminum surfaces by anodic aluminum oxide. Characterization of polymerized films on aluminum was explored by scanning electron microscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectroscopy analysis. Scanning electron microscopy results reveal that meaningful roughness was formed on aluminum surfaces by anodic oxidation. Secondary ion mass spectroscopy analysis results represent that the peel strength was found to depend on film thickness and the composition of the adhesion layer. As a result, Al/PPS (polyphenylene sulfide) resin assemblies developed in this study have superior adhesive property. Therefore, these assemblies might be a viable candidate for a sealing technique for Li ion batteries. PMID:26301310

  15. Preparation and analysis of anodic aluminum oxide films with continuously tunable interpore distances

    NASA Astrophysics Data System (ADS)

    Qin, Xiufang; Zhang, Jinqiong; Meng, Xiaojuan; Deng, Chenhua; Zhang, Lifang; Ding, Guqiao; Zeng, Hao; Xu, Xiaohong

    2015-02-01

    Nanoporous anodic aluminum oxides are often used as templates for preparation of nanostructures such as nanodot, nanowire and nanotube arrays. The interpore distance of anodic aluminum oxide is the most important parameter in controlling the periodicity of these nanostructures. Herein we demonstrate a simple and yet powerful method to fabricate ordered anodic aluminum oxides with continuously tunable interpore distances. By using mixed solution of citric and oxalic acids with different molar ratio, the range of anodizing voltages within which self-ordered films can be formed were extended to between 40 and 300 V, resulting in the interpore distances change from 100 to 750 nm. Our work realized very broad range of interpore distances in a continuously tunable fashion and the experiment processes are easily controllable and reproducible. The dependence of the interpore distances on acid ratios in mixed solutions was discussed through analysis of anodizing current and it was found that the effective dissociation constant of the mixed acids is of great importance. The interpore distances achieved are comparable to wavelengths ranging from UV to near IR, and may have potential applications in optical meta-materials for photovoltaics and optical sensing.

  16. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-01

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10-4 Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  17. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  18. Reactively Deposited Aluminum Oxide and Fluoropolymer Filled Aluminum Oxide Protective Coatings for Polymers

    NASA Technical Reports Server (NTRS)

    Rutledge, Sharon K.; Banks, Bruce A.; Hunt, Jason

    1995-01-01

    Reactive ion beam sputter deposition of aluminum simultaneous with low energy arrival of oxygen ions at the deposition surface enables the formation of highly transparent aluminum oxide films. Thick (12 200 A), adherent, low stress, reactively deposited aluminum oxide films were found to provide some abrasion resistance to polycarbonate substrates. The reactively deposited aluminum oxide films are also slightly more hydrophobic and more transmitting in the UV than aluminum oxide deposited from an aluminum oxide target. Simultaneous reactive sputter deposition of aluminum along with polytetrafluoroethylene (PTFE Teflon) produces fluoropolymer-filled aluminum oxide films which are lower in stress, about the same in transmittance, but more wetting than reactively deposited aluminum oxide films. Deposition properties, processes and potential applications for these coatings will be discussed.

  19. Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

    NASA Astrophysics Data System (ADS)

    Miki, Shohei; Iguchi, Koji; Kitano, Sho; Hayakashi, Koki; Hotta, Yasushi; Yoshida, Haruhiko; Ogura, Atsushi; Satoh, Shin-ichi; Arafune, Koji

    2015-08-01

    Aluminum oxide (AlOx) films were deposited by mist chemical vapor deposition (MCVD) in air for p-type crystalline silicon, and the effects of the deposition temperature (Tdep) and AlOx film thickness on the maximum surface recombination velocities (Smax) were evaluated. It was found that Smax was improved with increasing Tdep. The AlOx film deposited at 400 °C exhibited the best Smax value of 2.8 cm/s, and the passivation quality was comparable to that of AlOx deposited by other vacuum-based techniques. Smax was also improved with increasing film thickness. When the film thickness was above 10 nm, Smax was approximately 10 cm/s. From the Fourier transform infrared spectra, it was found that the AlOx films deposited by MCVD consisted of an AlOx layer and a Si-diffused AlOx layer. In addition, it is important for the layers to be thick enough to obtain high-quality passivation.

  20. Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films

    NASA Astrophysics Data System (ADS)

    Agashe, C.; Kluth, O.; Hüpkes, J.; Zastrow, U.; Rech, B.; Wuttig, M.

    2004-02-01

    This study addresses the electrical and optical properties of radio frequency magnetron sputtered aluminum doped zinc oxide (ZnO:Al) films. The main focus was on the improvement in carrier mobility μ to achieve simultaneously high transparency for visible and particularly near-infrared light and low resistivity. The influence of Al concentration in the target, film thickness, sputter power, deposition pressure, and substrate temperature on material properties was investigated. The structural, compositional, electrical and optical properties were studied using x-ray diffraction, secondary ion mass spectrometry (SIMS), room temperature Hall effect measurements and spectral photometry, respectively. All ZnO:Al films were polycrystalline and preferentially oriented along [002]. The grain size along the direction of growth increased with higher Al doping and with increasing film thickness. The SIMS measurements revealed that the Al concentration in the film was nearly the same as in the target. Carrier concentration N and mobility μ are determined by the target Al concentration. In addition μ is influenced by the film thickness and the sputter pressure. For each Al concentration, the highest μ was generally observed at low deposition pressures. By using a target with low Al2O3 concentration of 0.5 wt %, μ could be improved up to 44.2 cm2/V s while maintaining the electrical resistivity ρ as low as 3.8×10-4 Ω cm. For these films the transparency in the near-infrared wavelength range strongly improved which makes them particularly interesting for the application in optoelectronic devices like thin-film solar cells. The μ-N dependence for films deposited under diverse conditions was studied to identify a practical limit for μ.

  1. Application of a palladium hexacyanoferrate film-modified aluminum electrode to electrocatalytic oxidation of hydrazine.

    PubMed

    Razmi, Habib; Azadbakht, Azadeh; Sadr, Moayad Hossaini

    2005-11-01

    A palladium hexacyanoferrate (PdHCF) film as an electrocatalytic material was obtained at an aluminum (Al) electrode by a simple electroless dipping method. The modified Al electrode demonstrated a well-behaved redox couple due to the redox reaction of the PdHCF film. The PdHCF film showed an excellent electrocatalytic activity toward the oxidation of hydrazine. The electrocatalytic oxidation of hydrazine was studied by cyclic voltammetry and rotating disk electrode voltammetry techniques. A calibration graph obtained for the hydrazine consisted of two segments (localized at concentration ranges 0.39-10 and 20-75 mM). The rate constant k and transfer coefficient alpha for the catalytic reaction and the diffusion coefficient of hydrazine in the solution D, were found to be 3.11 x 10(3) M(-1) s(-1), 0.52 and 8.03 x 10(-6) cm2 s(-1) respectively. The modified electrode was used to amperometric determination of hydrazine in photographic developer. The interference of ascorbic acid and thiosulfate were investigated and greatly reduced using a thin film of Nafion on the modified electrode. The modified electrode indicated reproducible behavior and a high level of stability during electrochemical experiments, making it particularly suitable for analytical purposes. PMID:16317900

  2. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    SciTech Connect

    Morales-Masis, M. Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  3. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Morales-Masis, M.; Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2)-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  4. Effect of annealing temperature on the surface morphology and electrical properties of aluminum doped zinc oxide thin films prepared by sol-gel spin-coating method

    SciTech Connect

    Mamat, M. H.; Hashim, H.; Rusop, M.

    2008-05-20

    Aluminum doped zinc oxide thin films were prepared through sol gel and spin coating technique from zinc acetate dihydrate and aluminum nitrate nanohydrate in alcoholic solution. The electrical properties and surface morphology study are investigated for the thin films annealed at 350{approx}500 deg. C. Zinc oxide thin films deposited on glass and silicon substrates were characterized using electron microscopy (SEM) and current-voltage (I-V) measurement scanning for surface morphology and electrical properties study respectively. The SEM investigation shows that zinc oxide thin films are denser at higher annealing temperature. The result indicates electrical properties of aluminum doped zinc oxide thin films are improved with annealing temperatures. The resistivity of aluminum doped zinc oxide thin films are decreased with annealing temperature up to 500 deg. C.

  5. Optical properties of one-dimensional photonic crystals based on porous films of anodic aluminum oxide

    NASA Astrophysics Data System (ADS)

    Gorelik, V. S.; Klimonsky, S. O.; Filatov, V. V.; Napolskii, K. S.

    2016-04-01

    The optical properties of one-dimensional photonic crystals based on porous anodic aluminum oxide films have been studied by measuring transmittance and specular reflectance spectra in the visible and UV spectral regions. Angular dependences of the spectral positions of optical stop bands are obtained. It is shown that the reflectance within the first stop band varies from point to point on the sample surface, reaching a level of 98-99% at some points. The dispersion relation for electromagnetic waves in the model of infinite periodic structure is calculated for the samples under study. The possibility of using models with an infinite or finite number of layers to calculate reflectance spectra near the first optical stop band is discussed.

  6. Effect of Holding Time Before Solidification on Double-Oxide Film Defects and Mechanical Properties of Aluminum Alloys

    NASA Astrophysics Data System (ADS)

    El-Sayed, Mahmoud Ahmed; Salem, Hanadi A. G.; Kandeil, Abdelrazek Youssef; Griffiths, W. D.

    2011-12-01

    Double-oxide films (bifilms) have been held responsible for the variability in mechanical properties of aluminum castings. It has been suggested that the air entrapped inside a bifilm can react with the surrounding melt, leading to its consumption, which might improve the mechanical properties of the castings. In this work the effect of holding the melt before solidification on the distribution of mechanical properties, and by implication on entrained double oxide films, was investigated for several different aluminum alloys. The Weibull moduli of plate castings were determined under tensile conditions, and their fracture surfaces were examined for evidence of oxide films. The results suggested the occurrence of two competing mechanisms during the holding treatment: (1) the consumption of air inside the bifilms by reaction with the surrounding molten metal that may lead to improvements in mechanical properties and (2) the accompanying diffusion of hydrogen into the bifilms, which would be expected to have a deleterious effect on properties.

  7. Atomic layer deposited lithium aluminum oxide: (In)dependency of film properties from pulsing sequence

    SciTech Connect

    Miikkulainen, Ville Nilsen, Ola; Fjellvåg, Helmer; Li, Han; King, Sean W.; Laitinen, Mikko; Sajavaara, Timo

    2015-01-01

    Atomic layer deposition (ALD) holds markedly high potential of becoming the enabling method for achieving the three-dimensional all-solid-state thin-film lithium ion battery (LiB). One of the most crucial components in such a battery is the electrolyte that needs to hold both low electronic conductivity and at least fair lithium ion conductivity being at the same time pinhole free. To obtain these desired properties in an electrolyte film, one necessarily has to have a good control over the elemental composition of the deposited material. The present study reports on the properties of ALD lithium aluminum oxide (Li{sub x}Al{sub y}O{sub z}) thin films. In addition to LiB electrolyte applications, Li{sub x}Al{sub y}O{sub z} is also a candidate low dielectric constant (low-k) etch stop and diffusion barrier material in nanoelectronics applications. The Li{sub x}Al{sub y}O{sub z} films were deposited employing trimethylaluminum-O{sub 3} and lithium tert-butoxide-H{sub 2}O for Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, respectively. The composition was aimed to be controlled by varying the pulsing ratio of those two binary oxide ALD cycles. The films were characterized by several methods for composition, crystallinity and phase, electrical properties, hardness, porosity, and chemical environment. Regardless of the applied pulsing ratio of Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, all the studied ALD Li{sub x}Al{sub y}O{sub z} films of 200 and 400 nm in thickness were polycrystalline in the orthorhombic β-LiAlO{sub 2} phase and also very similar to each other with respect to composition and other studied properties. The results are discussed in the context of both fundamental ALD chemistry and applicability of the films as thin-film LiB electrolytes and low-k etch stop and diffusion barriers.

  8. Microstructural Effects on the Reactivity of Nano-Aluminum/Iodine (V) Oxide Films

    NASA Astrophysics Data System (ADS)

    Little, B.; Welle, E.; Martinez, L.; Nittinger, J.; Bogle, M.; Emery, S.; Lindsay, C.; Schrand, A.

    2013-06-01

    Recent efforts investigating the self-ignition mechanism of nanoaluminum blended with iodine (V) oxide in the form of powders with and without additives suggests that ignition begins below the decomposition point of either reactant and takes place at the alumina shell surrounding the aluminum nanoparticle. As observed in previous studies of powder composites, microstructural features such as particle morphology are expected to strongly influence properties that govern the combustion behavior of this energetic material (EM). In this study, highly reactive composites containing amorphous and/or crystalline iodine oxide and micron/nano-sized Al was blended with an additive and deposited as films. Physiochemical techniques such as thermal gravimetric analysis, scanning calorimetry, X-ray diffraction, electron microscopy, high-speed imaging and planar doppler velocimetry were employed to characterize these EMs with emphasis on correlating the reaction rate (burn rate) with inherent microstructural features (porosity, thickness, TMD, etc). This work was a continuation of efforts to probe the self-ignition mechanism of Al-iodine (V) oxide composites.

  9. Microstructural Effects on the Reactivity of Nano-Aluminum/Iodine (V) Oxide Films

    NASA Astrophysics Data System (ADS)

    Little, Brian; Langhals, Jarred; Emery, Sam; Martinez, Lucas; Welle, Eric; Lindsay, Michael

    2015-06-01

    Recent efforts investigating the self-ignition mechanism of nanoaluminum blended with iodine (V) oxide in the form of powders with and without additives suggests that ignition begins below the decomposition point of either reactant and takes place at the alumina shell surrounding the aluminum nanoparticle. As observed in previous studies of powder composites, microstructural features such as particle morphology are expected to strongly influence properties that govern the combustion behavior of this energetic material (EM). In this study, highly reactive composites containing amorphous and/or crystalline iodine oxide and nano-sized Al was blended with an additive and deposited as films. Physiochemical techniques such as thermal gravimetric analysis, scanning calorimetry, X-ray diffraction, electron microscopy, high-speed imaging, time of arrival data via photodiodes and planar doppler velocimetry were employed to characterize these EMs with emphasis on correlating the reaction rate (burn rate) with inherent microstructural features (porosity, thickness, TMD, etc). This work was a continuation of efforts to probe the self-ignition mechanism of Al-iodine (V) oxide composites.

  10. A study of the initial oxidation of evaporated thin films of aluminum by AES, ELS, and ESD

    NASA Technical Reports Server (NTRS)

    Bujor, M.; Larson, L. A.; Poppa, H.

    1982-01-01

    The room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.

  11. Plasmon-induced optical switching of electrical conductivity in porous anodic aluminum oxide films encapsulated with silver nanoparticle arrays.

    PubMed

    Huang, Chen-Han; Lin, Hsing-Ying; Lau, Ben-Chao; Liu, Chih-Yi; Chui, Hsiang-Chen; Tzeng, Yonhua

    2010-12-20

    We report on plasmon induced optical switching of electrical conductivity in two-dimensional (2D) arrays of silver (Ag) nanoparticles encapsulated inside nanochannels of porous anodic aluminum oxide (AAO) films. The reversible switching of photoconductivity greatly enhanced by an array of closely spaced Ag nanoparticles which are isolated from each other and from the ambient by thin aluminum oxide barrier layers are attributed to the improved electron transport due to the localized surface plasmon resonance and coupling among Ag nanoparticles. The photoconductivity is proportional to the power, and strongly dependent on the wavelength of light illumination. With Ag nanoparticles being isolated from the ambient environments by a thin layer of aluminum oxide barrier layer of controlled thickness in nanometers to tens of nanometers, deterioration of silver nanoparticles caused by environments is minimized. The electrochemically fabricated nanostructured Ag/AAO is inexpensive and promising for applications to integrated plasmonic circuits and sensors. PMID:21197062

  12. Sol-gel deposition and plasma treatment of intrinsic, aluminum-doped, and gallium-doped zinc oxide thin films as transparent conductive electrodes

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2015-09-01

    Zinc oxide and aluminum/gallium-doped zinc oxide thin films were deposited via sol-gel spin-coating technique. Employing plasma treatment as alternative to post thermal annealing, we found that the morphologies of these thin films have changed and the sheet resistances have been significantly enhanced. These plasma-treated thin films also show very good optical properties, with transmittance above 90% averaged over the visible wavelength range. Our best aluminum/gallium-doped zinc oxide thin films exhibit sheet resistances (Rs) of ~ 200 Ω/sq and ~ 150 Ω/sq, respectively.

  13. Characterization of molybdenum doped indium oxide/aluminum doped zinc oxide thin film stacks for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Elamurugu, Elangovan; Flores, Raquel; Janeiro, Ricardo; Dahlem, Marcus; Viegas, Jaime

    2014-03-01

    Multilayer (ML) thin films, based on indium molybdenum oxide (IMO) and aluminum zinc oxide (AZO), having different stacking were deposited using RF sputtering at room temperature (RT). The total-layer thickness of the MLs ranges between 93 nm and 98 nm. The deposited films were characterized by their structural, electrical, microstructural, and optical properties. X-ray diffraction (XRD) peaks obtained at 2θ of around 30.6° and 34.27° are matched with cubic-In2O3 (222) and hexagonal-ZnO (002), respectively. The MLs have both nano-crystalline and polycrystalline structures depending on the layer properties. A conspicuous feature of XRD analysis is the absence of diffraction peak from 50 nm thick IMO layer when it is stacked below 50 nm thick AZO, whereas it appears significantly when the stacking is reversed to place IMO above AZO layer. Hall measurements confirmed that the deposited MLs are n- type conducting and the electrical properties are varied as a function of layer properties. The deposited MLs show high shortwavelength infrared transmittance (SWIRT) even at 3300 nm, which is ranging as high as 75 % - 90 %. Overall, the MLs show high transmittance in the entire Vis-SWIR region. The optical band gap (Eg) calculated using the absorption coefficient (α) and photon energy (hν) of the deposited MLs is ranging between 3.19 eV and 3.56 eV, depending on the layer properties. Selected as- deposited films were annealed in open air at 400 °C for 1 h; the transmittance of annealed films was improved but their electrical properties deteriorated. Atomic force microscopy (AFM) analysis shows that the root-mean-square (RMS) roughness of the MLs ranges between 0.8 nm and 1.5 nm.

  14. Influence of the surface pre-treatment of aluminum on the processes of formation of cerium oxides protective films

    NASA Astrophysics Data System (ADS)

    Andreeva, R.; Stoyanova, E.; Tsanev, A.; Stoychev, D.

    2016-03-01

    It is known that there is special interest in the contemporary investigations on conversion treatment of aluminum aimed at promoting its corrosion stability, which is focused on electrolytes on the basis of salts of metals belonging to the group of rare-earth elements. Their application is especially attractive, as it enables a successful substitution of the presently applied highly efficient, but at the same time toxic Cr6+-containing electrolytes. The present paper presents a study on the influence of the preliminary alkaline activation and acidic de-oxidation of the aluminum surface on the processes of immersion formation of protective cerium oxides films on Al 1050. The results obtained show that their deposition from simple electrolytes (containing only salts of Ce3+ ions) on the Al surface, treated only in alkaline solution, occurs at a higher rate, which leads to preparing thicker oxide films having a better protective ability. In the cases when the formation of oxide films is realized in a complex electrolyte (containing salts of Ce3+ and Cu2+ ions), better results are obtained with respect to the morphology and protective action of cerium oxides film on samples that have been consecutively activated in alkaline solution and deoxidized in acidic solution. Electrochemical investigations were carried out in a model corrosion medium (0.1 M NaCl); it was shown that the cerium protective films, deposited by immersion, have a cathodic character with regard to the aluminum support and inhibit the occurrence of the depolarizing corrosion process -- the reaction of oxygen reduction.

  15. Effect of Aluminum concentration on structural and optical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films for transparent electrode applications

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Subba Rao, T.

    2012-11-01

    Zinc Aluminum Oxide(ZAO) thin films were deposited on glass substrates by DC reactive magnetron sputtering in an Ar+O2 gas mixture using commercial available Zn metal (99.99% purity) and Al (99.99% purity) targets of 2 inch diameter and 4 mm thickness. The films were characterized and the effect of aluminum (Al) concentration (2 at %-6 at %) on the structural and optical properties was studied. The average crystallite size obtained from Scherer formula is in the range of 32-44nm. Microstructural analysis using Scanning Electron Microscope (SEM) supplemented with EDS is carried out to find the grain size as well as to find the composition elemental data of prepared thin films. Optical study is performed to calculate the extinction coefficient (k), absorption coefficient (a), optical band gap (Eg) using transmission spectra obtained using UV-VIS-NIR spectrophotometer. There was widening of optical band gap with increasing aluminum concentration. ZAO film with low resistivity 3.2 × 10-4 cm and high transmittance of 80% is obtained for 3at% doped Al which is crucial for optoelectronic applications.

  16. Interfacial interactions of poly(ether ketone ketone) polymer coatings onto oxide-free phosphate films on an aluminum surface

    SciTech Connect

    Asunskis, A. L.; Sherwood, P. M. A.

    2007-07-15

    This article continues a series of papers that shows how thin (10 nm or less) oxide-free phosphate films can be formed on a number of metals. The films formed have potential as corrosion resistant films. Previous papers have shown that it is possible to extend the range of the surface coatings that can be formed by placing a thin polymer layer over the phosphate layer. In this work it is shown how the water insoluble polymer poly(ether ketone ketone) (PEKK) can be placed over a thin oxide-free phosphate film on aluminum metal. The surface and the interfaces involved were studied by valence band and core level x-ray photoelectron spectroscopy. Difference spectra in the valence band region were used to show that there is a chemical interaction between the PEKK and phosphate thin films on the aluminum metal. Three different phosphate film compositions were studied using different phosphorous containing acids, H{sub 3}PO{sub 4}, H{sub 3}PO{sub 3}, and H{sub 3}PO{sub 2}. This type of interaction illustrates the potential of phosphates to act as adhesion promoters. The valence band spectra are interpreted by calculations.

  17. Surface morphology and resistivity of aluminum oxide films prepared by plasma CVD combined with ion beam irradiation

    NASA Astrophysics Data System (ADS)

    Nakai, H.; Shinohara, J.; Sassa, T.; Ikegami, Y.

    1997-01-01

    Plasma CVD combined with simultaneous ion beams has been developed in order to prepare ceramic insulating films which have strong force of adhesion and higher electric resistivity at high temperatures. Aluminum oxide (Al 2O 3) films were deposited on nickel based superalloy (Inconel 718) by thermal CVD, plasma CVD and ion beam assisted plasma CVD at the several substrate temperatures. The surface morphology of these films was analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was confirmed that, by ion beam irradiation, the extent of crystallization was enhanced at lower substrate temperature and grain size became smaller. The electric resistivity was measured in the temperature range of RT to 800°C. The film, deposited by ion beam assisted plasma CVD at 800°C, had higher electric resistivity than the films by conventional CVD.

  18. Electrical and Optical Properties of Hydrogen Doped Aluminum-Doped Zinc Oxide Thin Films for Low Cost Applications.

    PubMed

    Park, Yong Seob; Park, Young; Kwon, Samyoung; Kim, Eung Kwon; Choi, Wonseok; Kim, Donguk; Kim, Minha; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were prepared on glass substrate using a magnetron sputtering system. In this work, a powder target was used as a source material for low cost applications, instead of a conventional sintered ceramic target. The effects of the hydrogen gas ratio on the electrical and optical properties of the AZO films. The hydrogen doped AZO (AZO:H) films had a hexagonal polycrystalline structure. A small amount of hydrogen gas deteriorated the electrical and optical properties of the AZO:H films. However, these properties improved, as the H2/(H2 + Ar) gas ratio increased. The AZO:H films grown at an H2/(H2+Ar) ratio of 10% showed good properties for low cost applications, such as a low resistivity of 1.35 x 10(-3) Ω-cm, high average transmittance of 83.1% in the visible range of light. PMID:27483879

  19. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

    PubMed Central

    2014-01-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10−4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films. PMID:25352768

  20. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices.

    PubMed

    Chang, Shang-Chou

    2014-01-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10(-4) Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films. PMID:25352768

  1. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Chang, Shang-Chou

    2014-10-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10-4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films.

  2. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  3. Monomolecular layers and thin films of silane coupling agents by vapor-phase adsorption on oxidized aluminum

    SciTech Connect

    Kurth, D.G.; Bein, T.

    1992-08-06

    Thin films of tetraethoxysilane [TEOS], (3-bromopropyl)trimethoxysilane [BPS], trimethoxyvinylsilane [VS], and 3-(trimethoxysilyl) propyl methacrylate [TPM] on oxidized aluminum surfaces have been investigated by reflection-absorption FTIR spectroscopy, ellipsometry, contact angle, and quartz crystal microbalance (QCM) measurements. Gravimetric measurements with the QCM can reveal quantitative aspects of adsorption and film formation, even for films as thin as monolayers. Adsorption of these silane coupling agents from solution typically produces multilayer films. Vapor-phase adsorption of TEOS and TPM at room temperature results in monomolecular layers. The coupling agents VS and BPS require additional heating after the vapor-phase adsorption to initiate the hydrolysis and condensation reactions necessary for the surface attachment, which produces one to three layers. For vapor adsorbed films a packing density of 4-7 molecules/nm{sup 2} was found. The data strongly suggest that the organic moieties in several of these films have a preferential orientation on the surface; they can be viewed as two-dimensional, oligomeric siloxane networks with oriented organic chains. Subsequent heating of TPM films results in structural rearrangements; heating of TEOS results in complete condensation to SiO{sub 2} films. 43 refs., 6 figs., 4 tabs.

  4. Investigations on opto-electronical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Rao, T. Subba

    2013-01-01

    In the present study transparent conducting zinc aluminum oxide (ZAO) thin films were prepared by DC reactive magnetron sputtering technique. The films were deposited on glass substrates at 200 °C and annealed from 200 °C to 500 °C. XRD patterns of ZAO films shows (0 0 2) diffraction peak of hexagonal wurtzite, meaning that the films have c-axis orientation perpendicular to the substrate. Crystallite size was calculated from X-ray diffraction (XRD) spectra using the Scherrer formula. The surface morphology of the films was observed by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The electrical conductivity increases with increase of annealing temperature. The activation energies of conduction were obtained from an Arrhenius equation. The best characteristics of ZAO films have been obtained for the films annealed at 400 °C with an average transmittance of 88% and a minimum resistivity of 2.2 × 10-4 Ω cm. The optical band gap, optical constants, and electron concentrations of ZAO films are obtained from UV-vis-IR spectrophotometer data.

  5. MTBE OXIDATION BY BIFUNCTIONAL ALUMINUM

    EPA Science Inventory

    Bifunctional aluminum, prepared by sulfating zero-valent aluminum with sulfuric acid, has a dual functionality of simultaneously decomposing both reductively- and oxidatively-degradable contaminants. In this work, the use of bifunctional aluminum for the degradation of methyl te...

  6. X-ray photoelectron spectroscopic study of the oxide film on an aluminum-tin alloy in 3.5% sodium chloride solution

    SciTech Connect

    Venugopal, A.; Selvam, P.; Raja, V.S.; Veluchamy, P.; Minoura, H.

    1997-10-01

    Oxide films on Al and an Al-Sn alloy were analyzed by x-ray photoelectron spectroscopy (XPS) after immersion in 3.5% sodium chloride (NaCl) solution. Results showed Sn exhibited both Sn{sup 2+} and Sn{sup 4+} oxidation stats in the oxide film. It was proposed that incorporation of these cations in the film would result in generation of more anionic and cationic vacancies in aluminum oxide (Al{sub 2}O{sub 3}), leading to active dissolution of Al.

  7. Effect of Sputtering Gas environments on the Properties of Aluminum-doped Zinc Oxide Thin Films for Photovoltaic Application

    SciTech Connect

    Chauhan, Ram Narayan; Kumar, Jitendra; Singh, C.; Anand, R. S.

    2011-10-20

    Aluminum-doped zinc oxide thin films have been deposited on glass substrates by R.F. sputtering using ZnO(98%)-Al{sub 2}O{sub 3}(2%) target in different sputtering gaseous environments, viz., Ar, Ar/O{sub 2} and Ar/N{sub 2}+H{sub 2} at 80 deg. C. These films have been studied with regard to phase, microstructure, optical absorption and sheet resistance for application in photovoltaic devices as transparent conducting electrodes. The properties of the films are shown to strongly depend on the sputtering gas(es). The films exhibit a wurtzite-type hexagonal structure with the (00.2) preferred orientation, the c-axis perpendicular to the substrate. The intensity of 00.2 diffraction peak and the average crystallite size remain almost the same when the films are prepared under pure Ar or Ar/O{sub 2} environment. However the average crystallite size increases while electrical resistance decreases with introduction of nitrogen and hydrogen in comparison to oxygen in argon. Nevertheless, the optimum value of optical transmittance and sheet resistance of the films deposited in pure argon are found to be 85-96% in the wavelength range 400-800 nm and 65 {Omega}/{open_square}, respectively.

  8. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition.

    PubMed

    Wang, Zi-Yi; Zhang, Rong-Jun; Lu, Hong-Liang; Chen, Xin; Sun, Yan; Zhang, Yun; Wei, Yan-Feng; Xu, Ji-Ping; Wang, Song-You; Zheng, Yu-Xiang; Chen, Liang-Yao

    2015-01-01

    The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al2O3 thin films were measured and analyzed before and after annealing in nitrogen condition in the wavelength range from 250 to 1,000 nm, respectively. The refractive index of Al2O3 thin films was described by Cauchy model and the ellipsometric spectra data were fitted to a five-medium model consisting of Si substrate/SiO2 layer/Al2O3 layer/surface roughness/air ambient structure. It is found that the refractive index of Al2O3 thin films decrease with increasing film thickness and the changing trend revised after annealing. The phenomenon is believed to arise from the mechanical stress in ALD-Al2O3 thin films. A thickness transition is also found by transmission electron microscopy (TEM) and SE after 900°C annealing. PMID:25852343

  9. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Wang, Zi-Yi; Zhang, Rong-Jun; Lu, Hong-Liang; Chen, Xin; Sun, Yan; Zhang, Yun; Wei, Yan-Feng; Xu, Ji-Ping; Wang, Song-You; Zheng, Yu-Xiang; Chen, Liang-Yao

    2015-02-01

    The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al2O3 thin films were measured and analyzed before and after annealing in nitrogen condition in the wavelength range from 250 to 1,000 nm, respectively. The refractive index of Al2O3 thin films was described by Cauchy model and the ellipsometric spectra data were fitted to a five-medium model consisting of Si substrate/SiO2 layer/Al2O3 layer/surface roughness/air ambient structure. It is found that the refractive index of Al2O3 thin films decrease with increasing film thickness and the changing trend revised after annealing. The phenomenon is believed to arise from the mechanical stress in ALD-Al2O3 thin films. A thickness transition is also found by transmission electron microscopy (TEM) and SE after 900°C annealing.

  10. Solution Processing of Cadmium Sulfide Buffer Layer and Aluminum-Doped Zinc Oxide Window Layer for Thin Films Solar Cells

    NASA Astrophysics Data System (ADS)

    Alam, Mahboob; Islam, Mohammad; Achour, Amine; Hayat, Ansar; Ahsan, Bilal; Rasheed, Haroon; Salam, Shahzad; Mujahid, Mohammad

    2014-07-01

    Cadmium sulfide (CdS) and aluminum-doped zinc oxide (Al:ZnO) thin films are used as buffer layer and front window layer, respectively, in thin film solar cells. CdS and Al:ZnO thin films were produced using chemical bath deposition (CBD) and sol-gel technique, respectively. For CBD CdS, the effect of bath composition and temperature, dipping time and annealing temperature on film properties was investigated. The CdS films are found to be polycrystalline with metastable cubic crystal structure, dense, crack-free surface morphology and the crystallite size of either few nanometers or 12-17 nm depending on bath composition. In case of CdS films produced with 1:2 ratio of Cd and S precursors, spectrophotometer studies indicate quantum confinement effect, owing to extremely small crystallite size, with an increase in Eg value from 2.42 eV (for bulk CdS) to 3.76 eV along with a shift in the absorption edge toward 330 nm wavelength. The optimum annealing temperature is 400°C beyond which film properties deteriorate through S evaporation and CdO formation. On the other hand, Al:ZnO films prepared via spin coating of precursor sols containing 0.90-1.10 at.% Al show that, with an increase in Al concentration, the average grain size increases from 28 nm to 131 nm with an associated decrease in root-mean-square roughness. The minimum value of electrical resistivity, measured for the films prepared using 0.95 at.% Al in the precursor sol, is 2.7 × 10-4 Ω ṡ cm. The electrical resistivity value rises upon further increase in Al doping level due to introduction of lattice defects and Al segregation to the grain boundary area, thus limiting electron transport through it.

  11. Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.

    PubMed

    Branquinho, Rita; Salgueiro, Daniela; Santos, Lídia; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

    2014-11-26

    Solution processing has been recently considered as an option when trying to reduce the costs associated with deposition under vacuum. In this context, most of the research efforts have been centered in the development of the semiconductors processes nevertheless the development of the most suitable dielectrics for oxide based transistors is as relevant as the semiconductor layer itself. In this work we explore the solution combustion synthesis and report on a completely new and green route for the preparation of amorphous aluminum oxide thin films; introducing water as solvent. Optimized dielectric layers were obtained for a water based precursor solution with 0.1 M concentration and demonstrated high capacitance, 625 nF cm(-2) at 10 kHz, and a permittivity of 7.1. These thin films were successfully applied as gate dielectric in solution processed gallium-zinc-tin oxide (GZTO) thin film transistors (TFTs) yielding good electrical performance such as subthreshold slope of about 0.3 V dec(-1) and mobility above 1.3 cm2 V(-1) s(-1). PMID:25354332

  12. Electrode patterning and annealing processes of aluminum-doped zinc oxide thin films using a UV laser system

    NASA Astrophysics Data System (ADS)

    Hsiao, Wen-Tse; Tseng, Shih-Feng; Huang, Kuo-Cheng; Chiang, Donyau

    2013-01-01

    This study presents the hybrid processing (patterning and annealing) of aluminum-doped zinc oxide (AZO) films in a one-step process using a diode-pumped-solid-state (DPSS) ultraviolet (UV) laser system. The focused laser beam had a diameter of 30 μm and the positive defocused laser beam had a diameter of 1 mm. Both beams were adjusted using a UV laser-processing system. AZO films were deposited on Corning Eagle 2000® optical glass sheets with a thickness of 0.7 mm using a sputtering method. The deposited films were approximately 200 nm. The optoelectronic properties of machined (patterning and annealing) AZO films depend on the laser pulse frequency and galvanometer scanning speed. The surface morphology, roughness, optical transmittance, and resistivity of the films after the laser patterning and annealing processes were measured using a three-dimensional confocal laser scanning microscope, a field emission scanning electron microscope (FE-SEM), a spectrophotometer, and a four-point probe instrument, respectively. Experimental results indicate that the ablation depth increased as the pulse repetition frequency increased. The ablation depth also decreased as the galvanometric scanning speed increased. The transmittance spectra of the film changes slightly after laser annealing, and the average transmittance in the visible region is approximately 83%. All resistivity values of laser-patterned and annealed AZO films decreased significantly. The structural properties grain size was calculated firm the X-ray diffraction (XRD) spectra using the Scherrer equation that increased from 7.4 nm to 12 nm as the annealing scanning speed decreased from 800 mm/s to 400 mm/s. The root mean square (RMS) values of annealed AZO films treated with a laser scanning speed of 500 mm/s with a pulse repetition frequency of 40 kHz, 55 kHz, and 70 kHz were 1.1 nm, 1.2 nm, and 1.8 nm, respectively.

  13. Effects of target angle on the properties of aluminum doped zinc oxide films prepared by DC magnetron sputtering for thin film solar cell applications.

    PubMed

    Park, Hyeongsik; Iftiquar, S M; Thuy, Trinh Than; Jang, Juyeon; Ahn, Shihyun; Kim, Sunbo; Lee, Jaehyeong; Jung, Junhee; Shin, Chonghoon; Kim, Minbum; Yi, Junsin

    2014-10-01

    An aluminum doped zinc oxide (AZO) films for front contacts of thin film solar cells, in this work, were prepared by DC magnetron sputtering with different target angles. Effects of target angles on the structural and electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. The surface became more irregular with increasing the target angle due to larger grains. The self-surface textured morphology, which is a favorable property as front layer of solar cell, exhibited at target angle of 72.5 degrees. We obtained the films with various opto-electronic properties by controlling target angle from 32.5 degrees to 72.5 degrees. The spectral haze increased substantially with the target angle, whereas the electrical resistivity was increased. The conversion efficiency of amorphous silicon solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density and fill factor, compared to cell with relatively flat AZO films. PMID:25942853

  14. Deposition of aluminum-doped zinc oxide thin films for optical applications using rf and dc magnetron sputter deposition

    SciTech Connect

    Sivakumar, Kousik; Rossnagel, S. M.

    2010-07-15

    Aluminum-doped zinc oxide films were deposited by dc and rf magnetron sputtering from ZnO(98%)Al{sub 2}O{sub 3}(2%) target at room temperature on silicon and glass substrates under a variety of process conditions with the goal of attaining the highest transmittance and lowest resistivity for photovoltaic applications. The magnetron power and pressure were varied. For many dielectric deposition systems, added oxygen is necessary to achieve the appropriate stoichiometry. The effect of oxygen on film properties was then studied by varying the oxygen partial pressure from 1.5x10{sup -5} to 4.0x10{sup -5} T at a constant Ar pressure, with the result that any added oxygen was deleterious. Films deposited under power, pressure, and low-oxygen conditions were then characterized for electrical and optical properties. Following this, the dc and rf sputtered films were annealed at up to 400 deg. C seconds using rapid thermal annealing (RTA), and the influence of annealing on resistivity, transmittance, band gap, as well as grain growth and stress was studied. The effect of RTA was immediate and quite significant on dc films while the effect on rf films was not as profound. As-deposited rf films had a higher average transmittance (87%) and lower resistivity (5.5x10{sup -4} {Omega} cm) compared to as-deposited dc films (84.2% and 8.9x10{sup -4} {Omega} cm). On the other hand, after RTA at 400 deg. C for 60 s, dc films exhibited better average transmittance (92.3%) and resistivity (2.9x10{sup -4} {Omega} cm) than rf films (90.7% and 4.0x10{sup -4} {Omega} cm). The band gap of dc films increased from 3.55 to 3.80 eV while that of rf films increased from 3.76 to 3.85 eV. Finally, dc and rf films were textured in 0.1% HCl and compared to U-type Asahi glass for resistivity and transmittance.

  15. Adsorption of titanium, chromium, and copper atoms on thin aluminum and magnesium oxide film surfaces

    NASA Astrophysics Data System (ADS)

    Tvauri, I. V.; Turiev, A. M.; Tsidaeva, N. I.; Gazzaeva, M. E.; Vladimirov, G. G.; Magkoev, T. T.

    2012-04-01

    Methods of Auger electron spectroscopy (AES), spectroscopy of characteristic electron energy losses (SCEEL), slow electron diffraction (SED), and contact potential difference (CPD) in ultrahigh vacuum are used to investigate the adsorption-emission properties and stability of two-component film systems formed by putting of Ti, Cr, and Cu atoms on MgO-Mo(011) and Al2O3-Mo(011) surfaces. All atoms have the properties of electronegative adsorbates. Continuous adatom monolayers are formed on the Al2O3-Mo(011) system surface, and three-dimensional islands are formed on the MgO-Mo(011) surface. The properties of monoatomic films on the oxide layer surface are close to those observed for bulk materials. No radical changes of the system properties are detected with increasing dielectric layer thickness. The thermal stability of the newly formed structures decreases in the order Ti, Cr, Cu, Al2O3(MgO), and Mo(011).

  16. Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system

    SciTech Connect

    Liu, D.-S.; Sheu, C.-S.; Lee, C.-T.

    2007-08-01

    Al-N codoped zinc oxide films were prepared using a radio-frequency magnetron cosputtering system at room temperature. AlN and ZnO materials were employed as the cosputtered targets. The as-deposited cosputtered films at various theoretical atomic ratios [Al/(Al+Zn) at. %] showed n-type conductive behavior in spite of the N atoms exceeding that of the Al dopants, indicating that the N-related acceptors were still inactive. The crystalline structure was obviously correlated with the cosputtered AlN contents and eventually evolved into an amorphous structure for the Al-N codoped ZnO film at a theoretical Al doping level reaching 60%. With an adequate postannealing treatment, the N-related acceptors were effectively activated and the p-type ZnO conductive behavior achieved. The appearance of the Zn{sub 3}N{sub 2} phase in the x-ray diffraction pattern of the annealed Al-N codoped ZnO film provided evidence of the nitrification of zinc ions. The redshift of the shallow level transition and the apparent suppression of the oxygen-related deep level emission investigated from the photoluminescence spectrum measured at room temperature were concluded to be influenced by the activated N-related acceptors. In addition, the activation of the N acceptors denoted as N-Zn bond and the chemical bond related to the Zn{sub 3}N{sub 2} crystalline structure were also observed from the associated x-ray photoelectron spectroscopy spectra.

  17. Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

    NASA Astrophysics Data System (ADS)

    Hua, Lei; Liu, Jian-hua; Li, Song-mei; Yu, Mei; Wang, Lei; Cui, Yong-xin

    2015-03-01

    The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The anodic oxidation was performed at 25°C and a constant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the approximate ranges of 10-20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.

  18. Role of oxygen desorption during vacuum annealing in the improvement of electrical properties of aluminum doped zinc oxide films synthesized by sol gel method

    NASA Astrophysics Data System (ADS)

    Zhu, Mingwei; Huang, Hui; Gong, Jun; Sun, Chao; Jiang, Xin

    2007-08-01

    Aluminum doped zinc oxide (ZAO) films were prepared by sol gel dip-coating process. Several annealing treatments were carried out to improve the conductivity of ZAO films. The results show that the annealing temperature and the cooling rate have significant effects on the resistivity of ZAO films. A minimum resistivity of 5.97×10-3Ωcm with the transmission in visible light region above 85% can be obtained after vacuum annealing. The desorption of oxygen that is chemisorbed on the surface and at the grain boundary is thought to be responsible for the observed improvement.

  19. Chemical vapor deposition of aluminum oxide

    DOEpatents

    Gordon, Roy; Kramer, Keith; Liu, Xinye

    2000-01-01

    An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

  20. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

    NASA Astrophysics Data System (ADS)

    Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

    2016-02-01

    We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5-10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT.

  1. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications.

    PubMed

    Skuza, J R; Scott, D W; Mundle, R M; Pradhan, A K

    2016-01-01

    We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5-10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

  2. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

    PubMed Central

    Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

    2016-01-01

    We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5–10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

  3. Ultrafine nanoporous palladium-aluminum film fabricated by citric acid-assisted hot-water-treatment of aluminum-palladium alloy film

    SciTech Connect

    Harumoto, Takashi; Tamura, Yohei; Ishiguro, Takashi

    2015-01-15

    Hot-water-treatment has been adapted to fabricate ultrafine nanoporous palladium-aluminum film from aluminum-palladium alloy film. Using citric acid as a chelating agent, a precipitation of boehmite (aluminum oxide hydroxide, AlOOH) on the nanoporous palladium-aluminum film was suppressed. According to cross-sectional scanning transmission electron microscopy observations, the ligament/pore sizes of the prepared nanoporous film were considerably small (on the order of 10 nm). Since this fabrication method only requires aluminum alloy film and hot-water with chelating agent, the ultrafine nanoporous film can be prepared simply and environmentally friendly.

  4. Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films

    SciTech Connect

    Prenzel, Marina; Kortmann, Annika; Keudell, Achim von; Arcos, Teresa de los; Winter, Joerg

    2012-11-15

    Al{sub 2}O{sub 3} thin films, either amorphous or of varying degrees of crystallinity, were deposited by two-frequency radio-frequency magnetron sputtering. Film crystallinity was investigated by Fourier transform infrared spectroscopy and X-ray diffraction (XRD). X-ray photoelectron spectroscopy (XPS) was employed to determine the amount of Ar naturally trapped within the films during the deposition process. A clear correlation was found between the existence of crystalline phases, as determined by XRD, and a shift towards lower binding energy positions of the Ar2p core levels of embedded gas. The shift is due to differences in the local Al{sub 2}O{sub 3} matrix (amorphous or crystalline) of the embedded gas, thus, providing an XPS fingerprint that can be used to qualitatively determine the presence or absence of crystalline phases in very thin films.

  5. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    SciTech Connect

    Erck, R.A.; Nichols, F.A.; Dierks, J.F.

    1993-10-01

    Hydrogenated amorphous carbon films or diamondlike carbon (DLC) films were formed by ion-beam deposition of 400 eV methane (CH{sub 4}) ions on several smooth and rough ceramics, as well as on ceramics coated with a layer of Si and Ti. Adhesion was measured by the pin-pull method. Excellent adhesion was measured for smooth SiC and Si{sub 3}N{sub 4}, but adhesion of DLC to Al{sub 2}O{sub 3} and ZrO{sub 2} was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective because bonding between the DLC film and Ti was poor. The presence of surface roughness appeared to greatly increase the measured adhesion in all cases. Bulk thermodynamic calculations are not directly applicable to bonding at the interface. If the standard enthalpy of formation for reaction between CH{sub 4} and substrate is calculated assumpting a carbide or carbon phase is produced, a relation is seen between reaction enthalpy and relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. Lack of adhesion to Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for reaction with CH{sub 4} strongly positive and similar in magnitude to that for Al{sub 2}O{sub 3} and ZrO{sub 2}.

  6. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K.

    2013-10-01

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (Ts). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10-3 Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at Ts of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein-Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ˜110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  7. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    SciTech Connect

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K.

    2013-10-14

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (T{sub s}). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10{sup −3} Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at T{sub s} of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein–Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ∼110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  8. Resistive Switching Behavior in Amorphous Aluminum Oxide Film Grown by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Quan, Xiao-Tong; Zhu, Hui-Chao; Cai, Hai-Tao; Zhang, Jia-Qi; Wang, Xiao-Jiao

    2014-07-01

    The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metal-organic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin films are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and ultraviolet-visible-infrared spectroscopy, respectively. The electronic character of Ag/Al2O3/ITO structure is tested by an Agilent B1500A. The device shows a typical bipolar resistive switching behavior under the dc voltage sweep mode at room temperature. The variation ratio between HRS and LRS is larger than nearly three orders of magnitude, which indicates the good potential of this structure in future resistive random access memory (ReRAM) applications. Based on the conductive filament model, the high electric field is considered the main reason for the resistive switching according to our measurements.

  9. Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering.

    PubMed

    Kim, Minha; Jang, Yong-Jun; Jung, Ho-Sung; Song, Woochang; Kang, Hyunil; Kim, Eung Kwon; Kim, Donguk; Yi, Junsin; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were deposited on glass and polyimide substrates using radio frequency magnetron sputtering. We investigated the effects of the oxygen gas ratio on the properties of the AZO films for Cu(In,Ga)Se2 thin-film solar cell applications. The structural and optical properties of the AZO thin films were measured using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and UV-Visible-NIR spectrophotometry. The oxygen gas ratio played a crucial role in controlling the optical as well as electrical properties of the films. When oxygen gas was added into the film, the surface AZO thin films became smoother and the grains were enlarged while the preferred orientation changed from (0 0 2) to (1 0 0) plane direction of the hexagonal phase. An improvement in the transmittance of the AZO thin films was achieved with the addition of 2.5-% oxygen gas. The electrical resistivity was highly increased even for a small amount of the oxygen gas addition. PMID:27483888

  10. Improving the direct electron transfer in monolithic bioelectrodes prepared by immobilization of FDH enzyme on carbon-coated anodic aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Castro-Muñiz, Alberto; Hoshikawa, Yasuto; Komiyama, Hiroshi; Nakayama, Wataru; Itoh, Tetsuji; Kyotani, Takashi

    2016-02-01

    The present work reports the preparation of binderless carbon-coated porous films and the study of their performance as monolithic bioanodes. The films were prepared by coating anodic aluminum oxide (AAO) films with a thin layer of nitrogen-doped carbon by chemical vapor deposition. The films have cylindrical straight pores with controllable diameter and length. These monolithic films were used directly as bioelectrodes by loading the films with D-fructose dehydrogenase (FDH), an oxidoreductase enzyme that catalyzes the oxidation of D-fructose to 5-keto-D-fructose. The immobilization of the enzymes was carried out by physical adsorption in liquid phase and with an electrostatic attraction method. The latter method takes advantage of the fact that FDH is negatively charged during the catalytic oxidation of fructose. Thus the immobilization was performed under the application of a positive voltage to the CAAO film in a FDH-fructose solution in McIlvaine buffer (pH 5) at 25 ºC. As a result, the FDH modified electrodes with the latter method show much better electrochemical response than that with the conventional physical adsorption method. Due to the singular porous structure of the monolithic films, which consists of an array of straight and parallel nanochannels, it is possible to rule out the effect of the diffusion of the D-fructose into the pores. Thus the improvement in the performance upon using the electrostatic attraction method can be ascribed not only to a higher uptake, but also to a more appropriate molecule orientation of the enzyme units on the surface of the electrodes.

  11. Growth of Sputtered-Aluminum Oxide Thin Films on si (100) and si (111) Substrates with Al2O3 Buffer Layer

    NASA Astrophysics Data System (ADS)

    Lim, Wei Qiang; Shanmugan, Subramani; Devarajan, Mutharasu

    2016-03-01

    Aluminum oxide (Al2O3) thin films with Al2O3 buffer layer were deposited on Si (100) and Si (111) substrates using RF magnetron sputtering of Al2O3 target in Ar atmosphere. The synthesized films were then annealed at the temperature of 400∘C, 600∘C and 800∘C in nitrogen (N2) environment for 6h. Structural properties and surface morphology are examined by using X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscope (AFM). XRD analysis indicated that different orientation of Al2O3 were formed with different intensities due to increase in the annealing temperature. From FESEM cross-section analysis results, it is observed that the thickness of films were increased as the annealing temperature increased. EDX analysis shows that the concentration of aluminum and oxygen on both the Si substrates increased with the increase in annealing temperature. The surface roughness of the films were found to be decreased first when the annealing temperature is increased to 400∘C, yet the roughness increased when the annealing temperature is further increased to 800∘C.

  12. Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

    NASA Astrophysics Data System (ADS)

    Wang, Li-Min; Wang, Chih-Yi; Jheng, Ciao-Ren; Wu, Syu-Jhan; Sai, Chen-Kai; Lee, Ya-Ju; Chiang, Ching-Yu; Shew, Bor-Yuan

    2016-08-01

    The crystalline structure, morphology, composition, electrical transport, and optical properties of aluminum-doped zinc oxide (AZO) films are studied for applications in transparent electronics and optoelectronic devices. AZO thin films of c-axis-oriented growth and with different thickness were deposited on PET flexible plastic substrates at room temperature by rf magnetron sputtering. A larger grain size with a decreased strain ɛ value is observed in a thicker film, while changes in composition for films with different thicknesses are insignificant. Moreover, the resistivity of film decreases with increasing thickness, and the low-temperature electrical transport properties can be described by the scenario of quantum corrections to conductivity. With the room-temperature growth conditions, the resistivity of 4.5 × 10-4 Ω cm, carrier concentration of 6.4 × 1020 cm-3, and transmittance of 80 % for the 1100-nm-thick film are obtained. In addition, the optical bandgap energy decreases with increasing film thickness, which can be attributed to the bandgap renormalization and crystallite size effects.

  13. Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier

    NASA Astrophysics Data System (ADS)

    Hwang, Ji-Hyun; Kwak, Hyunmin; Kwon, Myeung Hoi

    2014-03-01

    Aluminum-induced crystallization (AIC) of amorphous silicon with an Al2O3 diffusion barrier was investigated for controlling Si crystallization and preventing layer exchange during the annealing process. An Al2O3 layer was deposited between the a-Si and the Al films (a-Si/Al2O3/Al/Glass) and was blasted with an air spray gun with alumina beads to form diffusion channels between the Si and the Al layers. During the annealing process, small grain Si x Al seeds were formed at the channels. Then, the Al2O3 diffusion barrier was restructured to close the channels and prevent further diffusion of Al atoms into the a-Si layer. A polycrystalline Si film with (111), (220) and (311) crystallization peaks in the X-ray diffraction pattern was formed by annealing at 560 °C in a conventional furnace. That film showed a p-type semiconducting behavior with good crystallinity and a large grain size of up to 14.8 µm. No layer conversion occurred between the Si and the Al layers, which had been the fundamental obstacle to the applications in the crystallization of a-Si films by using the AIC method.

  14. Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

    PubMed

    Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

    2015-10-13

    Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance. PMID:26393523

  15. Frictional behavior and adhesion of Ag and Au films applied to aluminum oxide by oxygen-ion assisted Screen Cage Ion Plating (SCIP)

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis; Sliney, Harold E.

    1994-01-01

    A modified dc-diode ion plating system, by utilizing a metallic screen cage as a cathode, is introduced for coating nonconductors such as ceramics. Screen cage ion plating (SCIP) is used to apply Ag and Au lubricating films on aluminum oxide surfaces. This process has excellent ability to coat around corners to produce three-dimensional coverage of the substrate. A dramatic increase in adhesion is achieved when plating is performed in a reactive 50 percent O2 - 50 percent Ar glow discharge compared to the adhesion when plating is performed in 100 percent Ar. The presence of oxygen ion assistance contributes to the excellent adhesion as measured in a pull-type adhesion tester. The Ag and Au film adhesion is significantly increased (less than 70MPa) and generally exceeds the cohesion of the substrate such that portions of the alumina are pulled out.

  16. Optically stimulated luminescence (OSL) of carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) for film dosimetry in radiotherapy

    SciTech Connect

    Schembri, V.; Heijmen, B. J. M.

    2007-06-15

    Introduction and Purpose: Conventional x-ray films and radiochromic films have inherent challenges for high precision radiotherapy dosimetry. Here we have investigated basic characteristics of optically stimulated luminescence (OSL) of irradiated films containing carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) for dosimetry in therapeutic photon and electron beams. Materials and Methods: The OSL films consist of a polystyrene sheet, with a top layer of a mixture of single crystals of Al{sub 2}O{sub 3}:C, ground into a powder, and a polyester base. The total thickness of the films is 0.3 mm. Measurements have been performed in a water equivalent phantom, using 4, 6, 10, and 18 MV photon beams, and 6-22 MeV electron beams. The studies include assessment of the film response (acquired OSL signal/delivered dose) on delivered dose (linearity), dose rate (1-6 Gy/min), beam quality, field size and depth (6 MV, ranges 4x4-30x30 cm{sup 2}, d{sub max}-35 cm). Doses have been derived from ionization chamber measurements. OSL films have also been compared with conventional x-ray and GafChromic films for dosimetry outside the high dose area, with a high proportion of low dose scattered photons. In total, 787 OSL films have been irradiated. Results: Overall, the OSL response for electron beams was 3.6% lower than for photon beams. Differences between the various electron beam energies were not significant. The 6 and 18 MV photon beams differed in response by 4%. No response dependencies on dose rate were observed. For the 6 MV beam, the field size and depth dependencies of the OSL response were within {+-}2.5%. The observed inter-film response variation for films irradiated with the same dose varied from 1% to 3.2% (1 SD), depending on the measurement day. At a depth of 20 cm, 5 cm outside the 20x20 cm{sup 2} 6 and 18 MV beams, an over response of 17% was observed. In contrast to GafChromic and conventional x-ray films, the response of the Al{sub 2}O{sub 3}:C films is linear

  17. Dry lubricant films for aluminum forming.

    SciTech Connect

    Wei, J.; Erdemir, A.; Fenske, G. R.

    1999-03-30

    During metal forming process, lubricants are crucial to prevent direct contact, adhesion, transfer and scuffing of workpiece materials and tools. Boric acid films can be firmly adhered to the clean aluminum surfaces by spraying their methanol solutions and provide extremely low friction coefficient (about 0.04). The cohesion strengths of the bonded films vary with the types of aluminum alloys (6061, 6111 and 5754). The sheet metal forming tests indicate that boric acid films and the combined films of boric acid and mineral oil can create larger strains than the commercial liquid and solid lubricants, showing that they possess excellent lubricities for aluminum forming. SEM analyses indicate that boric acid dry films separate the workpiece and die materials, and prevent their direct contact and preserve their surface qualities. Since boric acid is non-toxic and easily removed by water, it can be expected that boric acid films are environmentally friendly, cost effective and very efficient lubricants for sheet aluminum cold forming.

  18. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    NASA Astrophysics Data System (ADS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-09-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al3+ films. The electrochromic performance of the films were evaluated by means of UV-vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni3+/Ni2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film.

  19. X-ray photoelectron spectroscopy study of para-substituted benzoic acids chemisorbed to aluminum oxide thin films

    SciTech Connect

    Kreil, Justin; Ellingsworth, Edward; Szulczewski, Greg

    2013-11-15

    A series of para-substituted, halogenated (F, Cl, Br, and I) benzoic acid monolayers were prepared on the native oxide of aluminum surfaces by solution self-assembly and spin-coating techniques. The monolayers were characterized by x-ray photoelectron spectroscopy (XPS) and water contact angles. Several general trends are apparent. First, the polarity of the solvent is critical to monolayer formation. Protic polar solvents produced low coverage monolayers; in contrast, nonpolar solvents produced higher coverage monolayers. Second, solution deposition yields a higher surface coverage than spin coating. Third, the thickness of the monolayers determined from XPS suggests the plane of the aromatic ring is perpendicular to the surface with the carboxylate functional group most likely binding in a bidentate chelating geometry. Fourth, the saturation coverage (∼2.7 × 10{sup 14} molecules cm{sup −2}) is independent of the para-substituent.

  20. Fabrication of electrodes on the aluminum doped zinc oxide thin films using an ultraviolet laser direct-patterning technology

    NASA Astrophysics Data System (ADS)

    Hsiao, Wen-Tse; Tseng, Shih-Feng; Kuo, Chao-Hui; Huang, Kuo-Cheng; Chiang, Donyau; Yao, Pin-Chiun; Chen, Ming-Fei

    Because transparent conductive oxide (TCO) thin films have more than 80% transmittance in visible spectrum, and high electrical conductivity, the TCO films are widely applied to flat panel displays and solar cells as transparent electrode materials. This study aims to develop a direct patterning technology on ZnO:Al (AZO) thin films by a diode-pumped solid state ultraviolet laser. The electrode patterns with array structures on AZO thin films were generated by a high-speed galvanometric scanning system. The optoelectronic properties of a patterned electrode have strong relation with the laser pulse frequency, the scan speed, and the patterning time. The surface morphology and roughness of patterned electrode were measured by three dimension confocal microscope and field emission scanning electron microscope, respectively. The resistivity of AZO thin films before and after laser patterning was measured by a four point probe instrument. The optical transmittance was recorded by a UV/VIS/NIR spectrophotometer. The experimental results indicated that the edge line width and depth decreased with increasing the scan speed. After the array patterns structure were formed by laser dry etching, the roughness Ra values of patterned area increased from 0.06 μm to 0.16 μm. These transmittances of patterned structure from 400 nm to 800 nm wavelengths averagely reached to 82%. The measured results of electrical conductively revealed that the resistivity gradually increased with increasing the pulse repetition frequency. In addition, surface morphologic examination on the straight lines, corners, and etched regions of patterned films revealed no micro-cracks observed which meant the patterned surface had a better surface quality.

  1. Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

    SciTech Connect

    Deng, Chunqing Otto, M.; Lupascu, A.

    2014-01-27

    We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

  2. Oxidation kinetics of aluminum diboride

    NASA Astrophysics Data System (ADS)

    Whittaker, Michael L.; Sohn, H. Y.; Cutler, Raymond A.

    2013-11-01

    The oxidation characteristics of aluminum diboride (AlB2) and a physical mixture of its constituent elements (Al+2B) were studied in dry air and pure oxygen using thermal gravimetric analysis to obtain non-mechanistic kinetic parameters. Heating in air at a constant linear heating rate of 10 °C/min showed a marked difference between Al+2B and AlB2 in the onset of oxidation and final conversion fraction, with AlB2 beginning to oxidize at higher temperatures but reaching nearly complete conversion by 1500 °C. Kinetic parameters were obtained in both air and oxygen using a model-free isothermal method at temperatures between 500 and 1000 °C. Activation energies were found to decrease, in general, with increasing conversion for AlB2 and Al+2B in both air and oxygen. AlB2 exhibited O2-pressure-independent oxidation behavior at low conversions, while the activation energies of Al+2B were higher in O2 than in air. Differences in the composition and morphology between oxidized Al+2B and AlB2 suggested that Al2O3-B2O3 interactions slowed Al+2B oxidation by converting Al2O3 on aluminum particles into a Al4B2O9 shell, while the same Al4B2O9 developed a needle-like morphology in AlB2 that reduced oxygen diffusion distances and increased conversion. The model-free kinetic analysis was critical for interpreting the complex, multistep oxidation behavior for which a single mechanism could not be assigned. At low temperatures, moisture increased the oxidation rate of Al+2B and AlB2, but both appear to be resistant to oxidation in cool, dry environments.

  3. Oxidation dynamics of aluminum nanorods

    SciTech Connect

    Li, Ying; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2015-02-23

    Aluminum nanorods (Al-NRs) are promising fuels for pyrotechnics due to the high contact areas with oxidizers, but their oxidation mechanisms are largely unknown. Here, reactive molecular dynamics simulations are performed to study thermally initiated burning of oxide-coated Al-NRs with different diameters (D = 26, 36, and 46 nm) in oxygen environment. We found that thinner Al-NRs burn faster due to the larger surface-to-volume ratio. The reaction initiates with the dissolution of the alumina shell into the molten Al core to generate heat. This is followed by the incorporation of environmental oxygen atoms into the resulting Al-rich shell, thereby accelerating the heat release. These results reveal an unexpectedly active role of the alumina shell as a “nanoreactor” for oxidation.

  4. Oxidation dynamics of aluminum nanorods

    NASA Astrophysics Data System (ADS)

    Li, Ying; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2015-02-01

    Aluminum nanorods (Al-NRs) are promising fuels for pyrotechnics due to the high contact areas with oxidizers, but their oxidation mechanisms are largely unknown. Here, reactive molecular dynamics simulations are performed to study thermally initiated burning of oxide-coated Al-NRs with different diameters (D = 26, 36, and 46 nm) in oxygen environment. We found that thinner Al-NRs burn faster due to the larger surface-to-volume ratio. The reaction initiates with the dissolution of the alumina shell into the molten Al core to generate heat. This is followed by the incorporation of environmental oxygen atoms into the resulting Al-rich shell, thereby accelerating the heat release. These results reveal an unexpectedly active role of the alumina shell as a "nanoreactor" for oxidation.

  5. Effect of Pore Size and Film Thickness on Gold-Coated Nanoporous Anodic Aluminum Oxide Substrates for Surface-Enhanced Raman Scattering Sensor

    PubMed Central

    Kassu, Aschalew; Farley, Carlton; Sharma, Anup; Kim, Wonkyu; Guo, Junpeng

    2015-01-01

    A sensitive surface enhanced Raman scattering chemical sensor is demonstrated by using inexpensive gold-coated nanoporous anodic aluminum oxide substrates. To optimize the performance of the substrates for sensing by the Surface-enhanced Raman scattering (SERS) technique, the size of the nanopores is varied from 18 nm to 150 nm and the gold film thickness is varied from 30 nm to 120 nm. The sensitivity of gold-coated nanoporous surface enhanced Raman scattering sensor is characterized by detecting low concentrations of Rhodamine 6G laser dye molecules. The morphology of the SERS substrates is characterized by atomic force microscopy. Optical properties of the nanoporous SERS substrates including transmittance, reflectance, and absorbance are also investigated. Relative signal enhancement is plotted for a range of substrate parameters and a detection limit of 10−6 M is established. PMID:26633402

  6. Low-temperature film growth of the oxides of zinc, aluminum, and vanadium (and related systems, oxides of gold and germanium, nitrides of aluminum and tungsten) by reactive sputter deposition. Final report, 1 July 1984-31 December 1987

    SciTech Connect

    Aita, C.R.

    1988-02-01

    The research involved investigation of process-parameter growth environment film property relationships for various binary oxide and nitride films grown on unheated substrates by reactive sputter deposition using an elemental target. In-situ optical-emission spectroscopy and glow-discharge mass spectrometry were used to determine gas-phase species in the plasma volume. A battery of techniques were used to characterize (post-deposition) film crystallography, chemistry, microstructure, electrical resistivity, and optical behavior.

  7. Influence of composition and processing parameters on the properties of solution-processed aluminum phosphate oxide (AlPO) thin films

    NASA Astrophysics Data System (ADS)

    Norelli, Kevin M.; Plassmeyer, Paul N.; Woods, Keenan N.; Glassy, Benjamin A.; Knutson, Christopher C.; Beekman, Matt; Page, Catherine J.

    2016-05-01

    The effects of precursor solution concentration, composition, and spin-processing parameters on the thickness and electrical properties of ultra-smooth aluminum oxide phosphate (Al2O3-3x(PO4)2x or "AlPO") thin films prepared using aqueous solutions are reported. Compositions were verified by electron probe micro-analysis and range from Al2O1.5(PO4) to AlPO4 (x = P:Al from 0.5 to 1.0). Film thicknesses were determined using X-ray reflectivity measurements and were found to depend systematically on solution concentration, P:Al ratio, and spin-speed. Metal-insulator-semiconductor devices were fabricated to determine electrical properties as a function of composition. As the P:Al ratio increased from 0.5 to 1.0, the dielectric constant decreased from 6.0 to 4.6, leakage currents increased from 0.45 to 65 nA cm-2 at 1 MV cm-1 and dielectric breakdown (defined as leakage currents >10 μA cm-2) decreased from 9.74 to 2.84 MV cm-1. These results establish composition, concentration, and spin-speed for the production of AlPO films with targeted thicknesses and electrical properties.

  8. Low temperature near infrared plasmonic gas sensing of gallium and aluminum doped zinc oxide thin films from colloidal inks (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Sturaro, Marco; Della Gaspera, Enrico; Martucci, Alessandro; Guglielmi, Massimo

    2015-08-01

    We obtained Gallium-doped and Aluminum-doped Zinc Oxide nanocrystals by non aqueous colloidal heat-up synthesis. These nanocrystals are transparent in the visible range but exhibit localized surface plasmon resonances (LSPRs) in the near IR range, tunable and shiftable with dopant concentration (up to 20% mol nominal). GZO and AZO inks can be deposited by spin coating, dip coating or spray coating on glass or silicon, leading to uniform and high optical quality thin films. To enhance absorbtion in the infrared region, samples can be annealed in inert or reductant atmosphere (N2/Argon or H2 in Argon) resulting in plasmon intensity enhancement due to oxygen vacancies and conduction band electrons density increment. Then IR plasmon has been exploited for gas sensing application, according to the plasmon shifting for carrier density variations, due to electrons injection or removal by the target gas/sample chemical interactions. To obtain a functional sensor at low temperature, another treatment was investigated, involving surfanctant removal by dipping deposited films in a solution of organic acid, tipically oxalic acid in acetonitrile; such process could pave the way to obtain similar sensors deposited on plastics. Finally, GZO and AZO thin films proved sensibility to H2 and NOx, and in particular circumstances also to CO, from room temperature to 200°C. Sensibility behavior for different dopant concentration and temperture was investigated both in IR plasmon wavelengths (~2400 nm) and zinc oxide band gap (~370 nm). An enhancement in sensitivity to H2 is obtained by adding Pt nanoparticles, exploiting catalytic properties of Platinum for hydrogen splitting.

  9. Resistive switching of aluminum oxide for flexible memory

    SciTech Connect

    Kim, Sungho; Choi, Yang-Kyu

    2008-06-02

    The unipolar resistive switching of the Al/Al{sub x}O{sub y}/Al structure is investigated for nonvolatile memory. Following the production of aluminum oxide film (Al{sub x}O{sub y}) by plasma oxidation, a high ratio of on-state and off-state currents ({>=}10{sup 4}) is achieved, and characteristics of switching endurance are reported. Due to the good ductility of aluminum, the performance of resistive switching on a flexible substrate is not degraded by severe substrate bending. The low process temperature of the plasma oxidation process is advantageous for the fabrication of flexible electronic devices and modern interconnection processes.

  10. Simulated Desorption of Aluminum and Oxide Covered Aluminum

    NASA Astrophysics Data System (ADS)

    Helvajian, Henry

    1998-03-01

    There is evidence that laser or electron stimulated nonthermal desorption from aluminum can proceed through plasmon excitation processes. Arakawa et al. observed this phenomenon with Al films and Kim et al. observed it with direct laser irradiation. (E.T. Arakawa, I. Lee and T.A. Callcott in Laser Ablation, J.C. Miller and R.F. Haglund Eds., Springer-Verlag, NY, 82 (1991).; H. S. Kim and H. Helvjian, J. Phys. Chem. 95, 6623 (1991).) Dreyfus et al. found nonthermal Al neutral species from laser irradiation of Al_2O_3, Schildbach et al. measured nonthermal Al ions from a well characterized sapphire (1120) sample, and Pedraza et al. showed that for laser irradiation of both alumina and sapphire there is a change in the degree of oxidation of the surface Al.(R.W. Dreyfus, R. Kelly and R.E. Walkup, Appl. Phys. Lett. 49, 1478 (1986);M.A. Schildbach and A.V. Hamza, Phys. Rev. B. 45, 6197 (1992); Pedraza et al., AIP Proc., Vol. 288 (1993) pg. 329.) These experiments show that oxygen on Al does not quench the nonthermal desorption. We will present measurements of the Al yield and K. E. w.r.t. oxygen coverage and laser fluence. This stimulated desorption work has environmental relevance to the storage of oxidized Al clad nuclear fuel rods.

  11. Oxide film microstructure: the link between surface preparation processes and strength/durability of adhesively bonded aluminum. Final report

    SciTech Connect

    Hsia, K. Jimmy; Pearlstein, Arne J.; Scheeline, Alexander; Shang, Jian Ku

    2000-11-30

    Strength and durability of adhesive bonding of aluminum alloys structures are intrinsically determined by the surface microstructures and interfacial failure micromechanisms. The current project presents a multidisciplinary approach to addressing critical issues controlling the strength and durability of adhesive bonds of aluminum alloys. Three main thrust areas have been pursued: surface treatment technology development to achieve desirable surface microstructures; relationship between surface structure and properties of adhesive bonds; and failure mechanisms of adhesively bonded components.

  12. Oxidation kinetics of aluminum diboride

    SciTech Connect

    Whittaker, Michael L.; Sohn, H.Y.; Cutler, Raymond A.

    2013-11-15

    The oxidation characteristics of aluminum diboride (AlB{sub 2}) and a physical mixture of its constituent elements (Al+2B) were studied in dry air and pure oxygen using thermal gravimetric analysis to obtain non-mechanistic kinetic parameters. Heating in air at a constant linear heating rate of 10 °C/min showed a marked difference between Al+2B and AlB{sub 2} in the onset of oxidation and final conversion fraction, with AlB{sub 2} beginning to oxidize at higher temperatures but reaching nearly complete conversion by 1500 °C. Kinetic parameters were obtained in both air and oxygen using a model-free isothermal method at temperatures between 500 and 1000 °C. Activation energies were found to decrease, in general, with increasing conversion for AlB{sub 2} and Al+2B in both air and oxygen. AlB{sub 2} exhibited O{sub 2}-pressure-independent oxidation behavior at low conversions, while the activation energies of Al+2B were higher in O{sub 2} than in air. Differences in the composition and morphology between oxidized Al+2B and AlB{sub 2} suggested that Al{sub 2}O{sub 3}–B{sub 2}O{sub 3} interactions slowed Al+2B oxidation by converting Al{sub 2}O{sub 3} on aluminum particles into a Al{sub 4}B{sub 2}O{sub 9} shell, while the same Al{sub 4}B{sub 2}O{sub 9} developed a needle-like morphology in AlB{sub 2} that reduced oxygen diffusion distances and increased conversion. The model-free kinetic analysis was critical for interpreting the complex, multistep oxidation behavior for which a single mechanism could not be assigned. At low temperatures, moisture increased the oxidation rate of Al+2B and AlB{sub 2}, but both appear to be resistant to oxidation in cool, dry environments. - Graphical abstract: Isothermal kinetic data for AlB{sub 2} in air, showing a constantly decreasing activation energy with increasing conversion. Model-free analysis allowed for the calculation of global kinetic parameters despite many simultaneous mechanisms occurring concurrently. (a) Time

  13. Vanadium oxides on aluminum oxide supports. 1. Surface termination and reducibility of vanadia films on alpha-Al2O3(0001).

    PubMed

    Todorova, Tanya K; Ganduglia-Pirovano, M Veronica; Sauer, Joachim

    2005-12-15

    Using density functional theory and statistical thermodynamics, we obtained the phase diagram of thin VnOm films of varying thickness (approximately 2-6 A, 1-6 vanadium layers) supported on alpha-Al2O3(0001). Depending on the temperature, oxygen pressure, and vanadium concentration, films with different thickness and termination may form. In ultrahigh vacuum (UHV), at room temperature and for low vanadium concentrations, an ultrathin (1 x 1) O=V-terminated film is most stable. As more vanadium is supplied, the thickest possible films form. Their structures and terminations correspond to previous findings for the (0001) surface of bulk V2O3 [Kresse et al., Surf. Sci. 2004, 555, 118]. The presence of surface vanadyl (O=V) groups is a prevalent feature. They are stable up to at least 800 K in UHV. Vanadyl oxygen atoms induce a V(2p) core-level shift of about 2 eV on the surface V atoms. The reducibility of the supported films is characterized by the energy of oxygen defect formation. For the stable structures, the results vary between 4.11 and 3.59 eV per 1/2O2. In contrast, oxygen removal from the V2O5(001) surface is much easier (1.93 eV). This provides a possible explanation for the lower catalytic activity of vanadium oxides supported on alumina compared to that of crystalline vanadia particles. PMID:16375327

  14. Structure of triglycine sulfate embedded in porous aluminum oxide

    NASA Astrophysics Data System (ADS)

    Golitsyna, O. M.; Drozhdin, S. N.; Zanin, I. E.; Gridnev, A. E.

    2012-11-01

    The X-ray diffraction investigations have been performed for nanocomposite materials based on porous aluminum oxide with inclusions of TGS and TGS, which is doped with L,α-alanine (ATGS). The presence of the TGS and ATGS textures in pores of Al2O3 films has been found. It has been established that, under conditions of confined geometry, the broadening of diffraction maxima of the reflection is caused by the size effect. The temperature dependences of the order parameter for porous aluminum oxide with TGS inclusions have been constructed.

  15. Platinum-Enhanced Electron Transfer and Surface Passivation through Ultrathin Film Aluminum Oxide (Al₂O₃) on Si(111)-CH₃ Photoelectrodes.

    PubMed

    Kim, Hark Jin; Kearney, Kara L; Le, Luc H; Pekarek, Ryan T; Rose, Michael J

    2015-04-29

    We report the preparation, stability, and utility of Si(111)-CH3 photoelectrodes protected with thin films of aluminum oxide (Al2O3) prepared by atomic layer deposition (ALD). The photoelectrodes have been characterized by X-ray photoelectron spectroscopy (XPS), photoelectrochemistry (Fc in MeCN, Fc-OH in H2O), electrochemical impedance spectroscopy (EIS), and cyclic voltammetry (CV) simulation. XPS analysis of the growing Al2O3 layer affords both the thickness, and information regarding two-dimensional versus three-dimensional mode of growth. Impedance measurements on Si(111)|CH3|Al2O3 devices reveal that the nascent films (5-30 Å) exhibit significant capacitance, which is attenuated upon surpassing the bulk threshold (∼30 Å). The Al2O3 layer provides enhanced photoelectrochemical (PEC) stability evidenced by an increase in the anodic window of operation in MeCN (up to +0.5 V vs Ag) and enhanced stability in aqueous electrolyte (up to +0.2 V vs Ag). XPS analysis before and after PEC confirms the Al2O3 layer is persistent and prevents surface corrosion (SiOx). Sweep-rate dependent CVs in MeCN at varying thicknesses exhibit a trend of increasingly broad features, characteristic of slow electron transport kinetics. Simulations were modeled as slow electron transfer through a partially resistive and electroactive Al2O3 layer. Lastly, we find that the Al2O3 ultrathin film serves as a support for the ALD deposition of Pt nanoparticles (d ≈ 8 nm) that enhance electron transfer through the Al2O3 layer. Surface recombination velocity (SRV) measurements on the assembled Si(111)|CH3|Al2O3-15 device affords an S value of 4170 cm s(-1) (τ = 4.2 μs) comparable to the bare Si(111)-CH3 surface (3950 cm s(-1); τ = 4.4 μs). Overall, the results indicate that high electronic quality and low surface defect densities can be retained throughout a multistep assembly of an integrated and passivated semiconductor|thin-film|metal device. PMID:25880534

  16. Oxidation and melting of aluminum nanopowders.

    PubMed

    Trunov, Mikhaylo A; Umbrajkar, Swati M; Schoenitz, Mirko; Mang, Joseph T; Dreizin, Edward L

    2006-07-01

    Recently, nanometer-sized aluminum powders became available commercially, and their use as potential additives to propellants, explosives, and pyrotechnics has attracted significant interest. It has been suggested that very low melting temperatures are expected for nanosized aluminum powders and that such low melting temperatures could accelerate oxidation and trigger ignition much earlier than for regular, micron-sized aluminum powders. The objective of this work was to investigate experimentally the melting and oxidation behavior of nanosized aluminum powders. Powder samples with three different nominal sizes of 44, 80, and 121 nm were provided by Nanotechnologies Inc. The particle size distributions were measured using small-angle X-ray scattering. Melting was studied by differential scanning calorimetry where the powders were heated from room temperature to 750 degrees C in an argon environment. Thermogravimetric analysis was used to measure the mass increase indicative of oxidation while the powders were heated in an oxygen-argon gas mixture. The measured melting curves were compared to those computed using the experimental particle size distributions and thermodynamic models describing the melting temperature and enthalpy as functions of the particle size. The melting behavior predicted by different models correlated with the experimental observations only qualitatively. Characteristic stepwise oxidation was observed for all studied nanopowders. The observed oxidation behavior was well interpreted considering the recently established kinetics of oxidation of micron-sized aluminum powders. No correlation was found between the melting and oxidation of aluminum nanopowders. PMID:16805619

  17. Aluminum-Oxide Temperatures on the Mark VB, VE, VR, 15, and Mark 25 Assemblies

    SciTech Connect

    Aleman, S.E.

    2001-07-17

    The task was to compute the maximum aluminum-oxide and oxide-coolant temperatures of assemblies cladded in 99+ percent aluminum. The assemblies considered were the Mark VB, VE, V5, 15 and 25. These assemblies consist of nested slug columns with individual uranium slugs cladded in aluminum cans. The CREDIT code was modified to calculate the oxide film thickness and the aluminum-oxide temperature at each axial increment. This information in this report will be used to evaluate the potential for cladding corrosion of the Mark 25 assembly.

  18. Aluminum-Oxide Temperatures on the Mark VB, VE, VR, 15, and Mark 25 Assemblies

    SciTech Connect

    Aleman, S.E.

    2001-07-17

    The task was to compute the maximum aluminum-oxide and oxide-coolant temperatures of assemblies cladded in 99 plus percent aluminum. The assemblies considered were the Mark VB, VE, V5, 15 and 25. These assemblies consist of nested slug columns with individual uranium slugs cladded in aluminum cans. The CREDIT code was modified to calculate the oxide film thickness and the aluminum-oxide temperature at each axial increment. The information in this report will be used to evaluate the potential for cladding corrosion of the Mark 25 assembly.

  19. Substrate biasing effect on the physical properties of reactive RF-magnetron-sputtered aluminum oxide dielectric films on ITO glasses.

    PubMed

    Liang, Ling Yan; Cao, Hong Tao; Liu, Quan; Jiang, Ke Min; Liu, Zhi Min; Zhuge, Fei; Deng, Fu Ling

    2014-02-26

    High dielectric constant (high-k) Al2O3 thin films were prepared on ITO glasses by reactive RF-magnetron sputtering at room temperature. The effect of substrate bias on the subband structural, morphological, electrode/Al2O3 interfacial and electrical properties of the Al2O3 films is systematically investigated. An optical method based on spectroscopic ellipsometry measurement and modeling is adopted to probe the subband electronic structure, which facilitates us to vividly understand the band-tail and deep-level (4.8-5.0 eV above the valence band maximum) trap states. Well-selected substrate biases can suppress both the trap states due to promoted migration of sputtered particles, which optimizes the leakage current density, breakdown strength, and quadratic voltage coefficient of capacitance. Moreover, high porosity in the unbiased Al2O3 film is considered to induce the absorption of atmospheric moisture and the consequent occurrence of electrolysis reactions at electrode/Al2O3 interface, as a result ruining the electrical properties. PMID:24490685

  20. Improved performance of dye-sensitized solar cells with novel conjugated organic dye using aluminum oxide-coated nanoporous titanium oxide films

    NASA Astrophysics Data System (ADS)

    Jo, Hyo Jeong; Nam, Jung Eun; Kim, Dae-Hwan; Kang, Jin-Kyu

    2014-03-01

    This work introduces the TiO2/dye/electrolyte interface in the recombination and offers an interface treatment method using solution process for dye-sensitized solar cells (DSSCs). Solution-processed ultra-thin metal oxides introduce to treat the surface of mesoporous TiO2 to reduce the defect density and improve the electronic quality. Among the metal oxides, an Al2O3 barrier is incorporated into DSSCs as a carrier-recombination blocking layer. In all instances, the short-circuit current density increase and the dark current is suppressed after Al2O3 deposition. The impact of the Al2O3 barriers is also studied in devices employing different dyes. To compare the behavior of metal-free organic dyes and Ru dyes when Al2O3 barrier layers are involved, the charge transfer between the dye and TiO2 electrodes, associated with interfacial electron injection, is investigated by Raman spectroscopy. The metal-free organic dye had a high molar extinction coefficient and better adsorption properties compare to Ru dye, which resulted in higher charge-collection efficiency. To verify the strategy, the DSSCs photovoltaic performances containing these dyes are compared using their current-voltage curves. Electrochemical impedance spectroscopy (EIS), Intensity Modulated Photocurrent Spectroscopy (IMPS), and Intensity Modulated photoVoltage Spectroscopy (IMVS) were used to further investigate the kinetics process of the TiO2 film electrodes.

  1. Stabilized chromium oxide film

    DOEpatents

    Garwin, Edward L.; Nyaiesh, Ali R.

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  2. Stabilized chromium oxide film

    DOEpatents

    Nyaiesh, A.R.; Garwin, E.L.

    1986-08-04

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  3. Characterization of phosphate films on aluminum surfaces

    SciTech Connect

    Cheng, B.; Ramamurthy, S.; McIntyre, N.S.

    1997-08-01

    A thin layer of phosphate conversion coating was formed on pure aluminum in a commercial zinc-manganese phosphating bath. A number of surface analytical techniques were used to characterize the phosphate thin films formed after immersion times ranging from 30 s to 10 min. The coating contained mainly a crystalline structure with dispersed micrometer-scale cavities. The major constituents of the phosphate film were zinc, phosphorus, and oxygen; a small amount of manganese was also detected. Based on these results, a three-stage mechanism was proposed for the formation and the growth of phosphate conversion coatings on aluminum. Electrochemical impedance spectroscopy was used to evaluate the corrosion performance of phosphated and uncoated aluminum samples in 0.50 M Na{sub 2}SO{sub 4} and 0.10 M H{sub 2}SO{sub 4} solutions. Both types of samples exhibited a passive state in the neutral solution and general corrosion behavior in the acid solution.

  4. One-pot synthesis of polypyrrole film on an aluminum oxide layer by electropolymerization in the presence of ammonium borodisalicylate in acetonitrile

    NASA Astrophysics Data System (ADS)

    Toita, Sadamu; Inoue, Kenzo

    This paper describes how one-pot preparation of polypyrrole (PPy) on Al 2O 3 layer in an aluminum solid capacitor could be achieved by electropolymerization of pyrrole (Py) in acetonitrile with small amounts of water, using ammonium borodisalicylate (ABS) as a new electrolyte. The effects of monomer and electrolyte concentrations, current density, and polymerization temperature on the PPy formation on Al 2O 3 layer in aluminum solid are also discussed. Polymerization occurred smoothly to give PPy on the Al 2O 3 layer under the following conditions: [ammonium borodisalicylate] = 0.02 M, [Py] = 0.1 M, and polymerization temperature = -42 °C, current density = 10 mA cm -2. The normalized capacitance, the C p/ C 0 value of capacitor fabricated, reached more than 0.9, indicating that the porosity and surface of the Al 2O 3 layer are filled up and covered with PPy. The Raman spectra of the PPy film showed that the peak assignable to C dbnd C backbone stretching shifted to a lower wave number of 1585 cm -1. This indicates formation of the film with well-conjugated C dbnd C backbone. The SEM micrograph of PPy on Al 2O 3 layer showed a closely packed globular morphology. These results indicate that the new electrolyte, ABS, has an excellent ability to form PPy film directly on Al 2O 3 surface by electropolymerization.

  5. Formulation and method for preparing gels comprising hydrous aluminum oxide

    SciTech Connect

    Collins, Jack L.

    2014-06-17

    Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent.

  6. Synthesis and characterization of nanoporous anodic oxide film on aluminum in H3PO4 + KMnO4 electrolyte mixture at different anodization conditions

    NASA Astrophysics Data System (ADS)

    Verma, Naveen; Jindal, Jitender; Singh, Krishan Chander; Mari, Bernabe

    2016-04-01

    The micro structural properties of nanoporous anodic oxide film formed in H3PO4 were highly influenced by addition of a low concentration of KMnO4 (0.0005 M) in 1 M H3PO4 solution. The KMnO4 as additive enhanced the growth rate of oxide film formation as well as thickness of pore walls. Furthermore the growth rate was found increased with increase in applied current density. The increase in temperature and lack of stirring during anodization causes the thinness of pore wall which leads to increase in pore volume. With the decrease in concentration of H3PO4 in anodizing electrolyte from 1M to 0.3 M, keeping all other conditions constant, the decrease in porosity was observed. This might be due to the dissolution of aluminium oxide film in highly concentrated acidic solution.

  7. Influence of doping with third group oxides on properties of zinc oxide thin films

    SciTech Connect

    Palimar, Sowmya Bangera, Kasturi V.; Shivakumar, G. K.

    2013-03-15

    The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10{sup 3} {Omega}{sup -1} cm{sup -1}. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.

  8. PTFE-ALUMINUM films serve as neutral density filters

    NASA Technical Reports Server (NTRS)

    Burks, H. D.

    1966-01-01

    Polytetrafluoroethylene /PTFE/ films coated with aluminum films act as neutral density filters in the wavelength range 0.3 to 2.1 microns. These filters are effective in the calibration of photometric systems.

  9. Specific features of aluminum nanoparticle water and wet air oxidation

    NASA Astrophysics Data System (ADS)

    Lozhkomoev, Aleksandr S.; Glazkova, Elena A.; Svarovskaya, Natalia V.; Bakina, Olga V.; Kazantsev, Sergey O.; Lerner, Marat I.

    2015-10-01

    The oxidation processes of the electrically exploded aluminum nanopowders in water and in wet air are examined in the paper. The morphology of the intermediate reaction products of aluminum oxidation has been studied using the transmission electron microscopy. It was shown that the aluminum nanopowder water oxidation causes the formation of the hollow spheres with mesoporous boehmite nanosheets coating. The wedge-like bayerite particles are formed during aluminum nanopowder wet air oxidation.

  10. Specific features of aluminum nanoparticle water and wet air oxidation

    SciTech Connect

    Lozhkomoev, Aleksandr S. Glazkova, Elena A. Svarovskaya, Natalia V. Bakina, Olga V. Kazantsev, Sergey O. Lerner, Marat I.

    2015-10-27

    The oxidation processes of the electrically exploded aluminum nanopowders in water and in wet air are examined in the paper. The morphology of the intermediate reaction products of aluminum oxidation has been studied using the transmission electron microscopy. It was shown that the aluminum nanopowder water oxidation causes the formation of the hollow spheres with mesoporous boehmite nanosheets coating. The wedge-like bayerite particles are formed during aluminum nanopowder wet air oxidation.

  11. Nanoscale aluminum concaves for light-trapping in organic thin-films

    NASA Astrophysics Data System (ADS)

    Goszczak, Arkadiusz Jarosław; Adam, Jost; Cielecki, Paweł Piotr; Fiutowski, Jacek; Rubahn, Horst-Günter; Madsen, Morten

    2016-07-01

    Anodic aluminum oxide (AAO) templates, fabricated from oxalic acid and phosphoric acid, lead to non-periodic nanoscale concave structures in their underlying aluminum layer, which are investigated for their field-enhancement properties by applying a thin-film polymer coating based laser ablation technique. Local ablation spots, corresponding to field enhancement on the ridge edges of the aluminum concave nanostructures, are observed in surface-covering polymer films, and confirmed with FDTD studies. The field enhancement leads to improved light absorption in the applied polymer layers, which may be used as an efficient method for enhancing the power conversion efficiency of organic solar cells.

  12. Laser reflection from oxide-coated aluminum

    NASA Technical Reports Server (NTRS)

    Williams, M. D.

    1982-01-01

    The theory of reflection from an oxide-coated metal is combined with experimentally measured parameters of aluminum to produce useful amplitude and phase shift information applicable to the concentration and direction of laser light. Amplitude and phase are plotted vs angle of incidence for several important laser wavelengths in the near UV, visible, and IR spectral regions.

  13. Aluminum doped zinc oxide for organic photovoltaics

    SciTech Connect

    Murdoch, G. B.; Hinds, S.; Sargent, E. H.; Tsang, S. W.; Mordoukhovski, L.; Lu, Z. H.

    2009-05-25

    Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.

  14. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  15. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  16. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  17. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  18. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  19. The preparation and properties of aluminum nitride films

    NASA Technical Reports Server (NTRS)

    Chu, T. L.; Kelm, R. W., Jr.

    1975-01-01

    Aluminum nitride films have been deposited on silicon substrates at 800-1200 C by the pyrolysis of an aluminum trichloride-ammonia complex, AlCl3.3NH3, in a gas flow system. The deposit was transparent, tightly adherent to the substrate, and was confirmed to be aluminum nitride by X-ray and electron diffraction techniques. The deposited aluminum nitride films were found to be polycrystalline with the crystallite size increasing with increasing temperature of deposition. Other properties of aluminum nitride films relevant to device applications, including density, refractive index, dissolution rate, dielectric constant, and masking ability, have been determined. These properties indicate that aluminum nitride films have potential as a dielectric in electronic devices.

  20. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  1. Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

    PubMed Central

    2014-01-01

    Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

  2. A Semi-empirical Mathematical Model to Estimate the Duration of the Atmosphere within a Double Oxide Film Defect in Pure Aluminum Alloy

    NASA Astrophysics Data System (ADS)

    Raiszadeh, R.; Griffiths, W. D.

    2008-04-01

    It has been shown that the oxygen and nitrogen within the atmosphere of a double oxide film defect can be consumed by the surrounding Al melt. Experimentally determined reaction rates were used to construct a semi-empirical model to predict the change in volume with time of a bubble of air trapped in an Al melt, with the model including the diffusion of H from the metal into the bubble. Comparison with experimental results showed that the model predicted the change in volume well. The model was then used to estimate the duration of the internal atmosphere within double oxide film defects, which suggested that these would be consumed in a time of up to 3 minutes, depending upon assumptions made about the initial defect size.

  3. Heterogeneous reaction of ozone with aluminum oxide

    NASA Technical Reports Server (NTRS)

    Keyser, L. F.

    1976-01-01

    Rates and collision efficiencies for ozone decomposition on aluminum oxide surfaces were determined. Samples were characterized by BET surface area, X-ray diffraction, particle size, and chemical analysis. Collision efficiencies were found to be between 2 times 10 to the -10 power and 2 times 10 to the -9 power. This is many orders of magnitude below the value of 0.000001 to 0.00001 needed for appreciable long-term ozone loss in the stratosphere. An activation energy of 7.2 kcal/mole was found for the heterogeneous reaction between -40 C and 40 C. Effects of pore diffusion, outgassing and treatment of the aluminum oxide with several chemical species were also investigated.

  4. Fast electromigration crack in nanoscale aluminum film

    SciTech Connect

    Emelyanov, O. A. Ivanov, I. O.

    2014-08-14

    The current-induced breakage of 20 nm thin aluminum layers deposited onto capacitor grade polypropylene (PP) films is experimentally studied. Biexponential current pulses of different amplitude (10–15 A) and duration (0.1–1 μs) were applied to the samples. Breakage occurred after fast development of electromigrating ∼200 nm-wide cracks with initial propagation velocity of ∼1 m/s under a high current density of ∼10{sup 12 }A/m{sup 2}. The cracks stopped when their lengths reached 250–450 μm. This behavior is explained by the balance of electromigration and stress-induced atomic fluxes.

  5. Formation of Fine Clusters in High-Temperature Oxidation of Molten Aluminum

    NASA Astrophysics Data System (ADS)

    Kim, KeeHyun

    2014-07-01

    High-temperature oxidation of molten aluminum was investigated by high-resolution electron microscopes in order to determine the possibility of heterogeneous nucleation of aluminum grains on oxide for the grain refinement and structural uniformity of intensively melt-sheared aluminum alloys. High-resolution observations detect initial amorphous phase and gamma-alumina phase and show fine clusters with size of about 150 to 200 nm composed of extremely fine aluminum grains and gamma-alumina or amorphous aluminum oxide. Furthermore, high-resolution lattice images and diffraction patterns show no orientation relationship, although there is a specific orientation between gamma-alumina and aluminum along (111)[110] with high potency of heterogeneous nucleation. The volumetric shrinkage by the transformation of gamma- into alpha-alumina causes the surface oxide films to repeatedly rupture and leads to the creation of channels to the base melt surface for further oxidation of fresh metal. Based on the observations, the mechanism of high-temperature oxidation of molten aluminum and formation of the fine clusters as well as the possibility of the heterogeneous nucleation of aluminum grains are discussed.

  6. Characterization of Aluminum Oxide Tunnel Barrier for use in a Non-Local Spin Detection Device

    NASA Astrophysics Data System (ADS)

    Abel, Joseph; Garramone, John; Sitnitsky, Ilona; Labella, Vincent

    2010-03-01

    Aluminum oxide can be utilized as an interface layer between ferromagnetic metals and silicon to achieve spin injection into silicon. The goal of our research is to inject and readout spins using a non-local measurement device that utilizes 1-2 nm aluminum oxide interface layers as tunnel barriers. An important step of fabricating a non-local measurement device out of silicon is the growth of an aluminum oxide tunnel barrierfootnotetextO. van't Erve, A. Hanbicki, M. Holub, C. Li, C. Awo-Affouda, P. Thompson and B. Jonker, Appl. Phys. Lett. 91, 212109 (2007).. Aluminum Oxide thin films where grown using a Knudsen cell to deposit 1 nm, 2 nm, and 3 nm of aluminum. The films were then oxidized in O2. X-ray photoelectron spectroscopy (XPS) was performed to characterize the film stoichiometry, and the band gap. We will also report on current voltage measurements of these films after they have been capped with metal and compare the resistance area product to those calculated for spin injection into siliconfootnotetextB.-C. Min, K. Motohashi, C. Lodder, and R. Jansen, Nat. Mater. 5, 817 (2006). .

  7. Formation of Anodic Aluminum Oxide with Branched and Meshed Pores.

    PubMed

    Kim, Byeol; Lee, Jin Seok

    2016-06-01

    Anodic aluminum oxide (AAO), with a self-ordered hexagonal array, is important for various applications in nanofabrication including as the fabrication of nanotemplates and other nanostructures. With the consideration, there have been many efforts to control the characteristic parameters of porous anodic alumina by adjustment of the anodizing conditions such as the electrolyte, temperature, applied potential, and Al purity. In particular, impurities in Al are changing the morphology of an alumina film; however, the formation mechanism has not yet been explained. In this work, we anodized a high purity (99.999%, Al(high)) and low purity (99.8%, Al(low)) aluminum foil by a two-step anodization process in an oxalic acid solution or phosphoric acid. It was found that the purity of aluminum foil has influenced the morphology of the alumina film resulting in branched and meshed pores. Also, electrochemical analysis indicated that the branched and meshed pores in the low-purity Al foil formed by the presence of impurities. Impurities act as defects and change the general growth mechanism for pore formation by inducing an electric field imbalance during anodization. This work contributes to the research field of topographical chemistry and applied fields including nanofabrication. PMID:27427755

  8. Aluminum-silver alloy films for solar reflectors

    NASA Astrophysics Data System (ADS)

    Adams, R. O.; Nordin, C. W.; Masterson, K. D.

    1980-05-01

    Films of aluminum silver alloys were formed using triode sputtering. Films with a wide variety of composition were produced and evaluated. Films deposited at low substrate temperatures had a high specular reflectance. At higher temperatures two phase alloys formed which had rough low reflecting surfaces.

  9. Aluminum nitride insulating films for MOSFET devices

    NASA Technical Reports Server (NTRS)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  10. Ester oxidation on an aluminum surface using chemiluminescence

    NASA Technical Reports Server (NTRS)

    Jones, William R., Jr.; Meador, Michael A.; Morales, Wilfredo

    1986-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin film microoxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing .001 M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period, or the time to reach one-half of maximum intensity was inversely proportional to test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  11. Formation of anodic aluminum oxide with serrated nanochannels.

    PubMed

    Li, Dongdong; Zhao, Liang; Jiang, Chuanhai; Lu, Jia G

    2010-08-11

    We report a simple and robust method to self-assemble porous anodic aluminum oxide membranes with serrated nanochannels by anodizing in phosphoric acid solution. Due to high field conduction and anionic incorporation, an increase of anodizing voltage leads to an increase of the impurity levels and also the field strength across barrier layer. On the basis of both experiment and simulation results, the initiation and formation of serrated channels are attributed to the evolution of oxygen gas bubbles followed by plastic deformation in the oxide film. Alternating anodization in oxalic and phosphoric acids is applied to construct multilayered membranes with smooth and serrated channels, demonstrating a unique way to design and construct a three-dimensional hierarchical system with controllable morphology and composition. PMID:20617804

  12. Alkaline oxide conversion coatings for aluminum alloys

    SciTech Connect

    Buchheit, R.G.

    1996-02-01

    Three related conversion coating methods are described that are based on film formation which occurs when aluminum alloys are exposed to alkaline Li salt solutions. Representative examples of the processing methods, resulting coating structure, composition and morphology are presented. The corrosion resistance of these coatings to aerated 0.5 M NaCl solution has been evaluated as a function of total processing time using electrochemical impedance spectroscopy (EIS). This evaluation shows that excellent corrosion resistance can be uniformly achieved using no more than 20 minutes of process time for 6061-T6. Using current methods a minimum of 80 minutes of process time is required to get marginally acceptable corrosion resistance for 2024-T3. Longer processing times are required to achieve uniformly good corrosion resistance.

  13. Effect of an oxygen plasma on uncoated thin aluminum reflecting films

    NASA Technical Reports Server (NTRS)

    Parsons, Roger L.; Gulino, Daniel A.

    1987-01-01

    Thin aluminum films were considered for use as a reflective surface for solar collectors on orbiting solar dynamic power systems. A matter of concern is the durability of such reflective coatings against oxidative attack by highly reactive neutral atomic oxygen, which is the predominate chemical specie in low Earth orbit. Research to date was aimed at evaluating the protective merit of thin dielectric coatings over the aluminum or other reflective metals. However, an uncoated aluminum reflector may self-protect by virtue of the oxide formed from its exposed surface, which constitutes a physical barrier to further oxidation. This possibility was investigated, and an attempt was made to characterize the effects of atomic oxygen on thin Al films using photomicrographs, scanning electron microscopy, spectrophotometry, Auger analysis, and mass measurements. Data collected in a parallel effort is discussed for its comparative value. The results of the investigation of uncoated aluminum supported the self-protection hypothesis, and importantly, it was found that long term specular reflectance for uncoated aluminum exceeded that of Al and Ag reflectors with dielectric coatings.

  14. Adhesive behavior of aluminum layers evaporated on polyester films

    SciTech Connect

    Vallat, M.F.; Haidara, H.; Ziegler, P.; Rey, D.; Papirer, Y.; Schultz, J.

    1996-01-01

    The adhesive performance of thin aluminum coatings deposited onto polymer substrates is considered. The effects of the evaporation conditions and the metal thickness on the adhesive properties of polyester/aluminum assemblies are examined. A ultrasonic test for adherence measurements of thin metal layers is proposed and its shown that a thermal treatment under stress modifies the adhesive properties of such metallized polymer films. (AIP) {copyright}{ital 1996 American Institute of Physics.}

  15. Nanopatterning of Crystalline Silicon Using Anodized Aluminum Oxide Templates for Photovoltaics

    NASA Astrophysics Data System (ADS)

    Chao, Tsu-An

    A novel thin film anodized aluminum oxide templating process was developed and applied to make nanopatterns on crystalline silicon to enhance the optical properties of silicon. The thin film anodized aluminum oxide was created to improve the conventional thick aluminum templating method with the aim for potential large scale fabrication. A unique two-step anodizing method was introduced to create high quality nanopatterns and it was demonstrated that this process is superior over the original one-step approach. Optical characterization of the nanopatterned silicon showed up to 10% reduction in reflection in the short wavelength range. Scanning electron microscopy was also used to analyze the nanopatterned surface structure and it was found that interpore spacing and pore density can be tuned by changing the anodizing potential.

  16. Lithography-free transmission filters at ultraviolet frequencies using ultra-thin aluminum films

    NASA Astrophysics Data System (ADS)

    Li, Zhongyang; Butun, Serkan; Aydin, Koray

    2016-06-01

    Aluminum allows for significant plasmon responses in ultraviolet (UV) regime of spectrum, where conventional plasmonic materials such as silver and gold lack plasmonic behavior due to their inherent dissipative limitation from lower plasmon frequency and inter-band transition. Such UV plasmonic resonance based on aluminum nanostructures could be challenging due to the smaller feature size of nanoscale resonator and remarkable sensitivity to oxidization. Here we theoretically and experimentally demonstrate lithography-free transmission filters using triple layers of continuous ultra-thin Al and dielectric films. Our proposed transmission filter is a triple-layer Fabry–Perot cavity and operates from 2.5 to 5.5 eV with bandwidth down to 0.5 eV and transmission amplitude up to 50%. Such flat Al ultra-thin film coatings suggest the use of aluminum as low-cost UV filters and UV optoelectronics as well as structural coloring applications.

  17. Growth behavior of anodic oxide formed by aluminum anodizing in glutaric and its derivative acid electrolytes

    NASA Astrophysics Data System (ADS)

    Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Suzuki, Ryosuke O.

    2014-12-01

    The growth behavior of anodic oxide films formed via anodizing in glutaric and its derivative acid solutions was investigated based on the acid dissociation constants of electrolytes. High-purity aluminum foils were anodized in glutaric, ketoglutaric, and acetonedicarboxylic acid solutions under various electrochemical conditions. A thin barrier anodic oxide film grew uniformly on the aluminum substrate by glutaric acid anodizing, and further anodizing caused the film to breakdown due to a high electric field. In contrast, an anodic porous alumina film with a submicrometer-scale cell diameter was successfully formed by ketoglutaric acid anodizing at 293 K. However, the increase and decrease in the temperature of the ketoglutaric acid resulted in non-uniform oxide growth and localized pitting corrosion of the aluminum substrate. An anodic porous alumina film could also be fabricated by acetonedicarboxylic acid anodizing due to the relatively low dissociation constants associated with the acid. Acid dissociation constants are an important factor for the fabrication of anodic porous alumina films.

  18. Fabrication of Crystalline Indium Tin Oxide Nanobasket Electrodes using Aluminum Anodic Oxide Template

    NASA Astrophysics Data System (ADS)

    Wang, Gou-Jen; Chen, He-Tsing; Yang, Hsihang

    2008-07-01

    Fabrication of crystalline indium tin oxide (ITO) nanobasket electrodes shaped by an anodic aluminum oxide (AAO) template for better electron conductivity is presented. ITO films were deposited on porous AAO templates by RF magnetron sputtering. The sputter-coated ITO films were characterized by field-emission scanning electron microscopy (FESEM) to illustrate the nanobasket morphologies. The compositions of the ITO films were characterized by energy-dispersive X-ray (EDS) analysis. X-ray diffraction (XRD) analysis was conducted to evaluate the crystallinity. The crystallinity can be enhanced by annealing at 300 °C. Although the conductivity of the ITO nanobasket film is larger than that of the conventional ITO thin film, the harvest efficiency can be markedly increased due to the nanobasket structure which enables most of the photoexcited electrons to reach their nearest electrode before losing their momentum. The presented ITO nanobasket films can be further used as a more effective electrode material for photovoltaics such as dye-sensitized solar cells (DSSCs).

  19. Angle selective light management in photovoltaics using self-assembled anodized aluminum oxide nanopatterns

    NASA Astrophysics Data System (ADS)

    Roberts, Brian; Ku, P.-C.

    2015-03-01

    Semitransparent photovoltaics are of interest for building integration and window coatings, though demonstrate an intrinsic tradeoff between transparency and absorption / efficiency. We propose alleviating this tradeoff using light management nanostructures which selectively scatter light based on incident wavelength and angle, allowing transmission of normally incident light for window visibility and absorption of light at elevated angles. Two structures of interest are proposed and described: metal nanorods which scatter light via their localized surface plasmon resonance properties, and arrays of subwavelength nanopores in a dielectric which demonstrate coherent multiple scattering. Both structures can potentially be patterned over large areas by electrochemical oxidation of aluminum into self assembled nanoporous anodized aluminum oxide (AAO) films.

  20. Fabrication of anodic aluminum oxide with incorporated chromate ions

    NASA Astrophysics Data System (ADS)

    Stępniowski, Wojciech J.; Norek, Małgorzata; Michalska-Domańska, Marta; Bombalska, Aneta; Nowak-Stępniowska, Agata; Kwaśny, Mirosław; Bojar, Zbigniew

    2012-10-01

    The anodization of aluminum in 0.3 M chromic acid is studied. The influence of operating conditions (like anodizing voltage and electrolyte's temperature) on the nanoporous anodic aluminum oxide geometry (including pore diameter, interpore distance, the oxide layer thickness and pores density) is thoroughly investigated. The results revealed typical correlations of the anodic alumina nanopore geometry with operating conditions, such as linear increase of pore diameter and interpore distance with anodizing voltage. The anodic aluminum oxide is characterized by a low pores arrangement, as determined by Fast Fourier transforms analyses of the FE-SEM images, which translates into a high concentration of oxygen vacancies. Moreover, an optimal experimental condition where chromate ions are being successfully incorporated into the anodic alumina walls, have been determined: the higher oxide growth rate the more chromate ions are being trapped. The trapped chromate ions and a high concentration of oxygen vacancies make the anodic aluminum oxide a promising luminescent material.

  1. Metal oxide films on metal

    DOEpatents

    Wu, Xin D.; Tiwari, Prabhat

    1995-01-01

    A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

  2. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  3. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  4. Modeling the Shock Ignition of a Copper Oxide Aluminum Thermite

    NASA Astrophysics Data System (ADS)

    Lee, Kibaek; Stewart, D. Scott; Clemenson, Michael; Glumac, Nick; Murzyn, Christopher

    2015-06-01

    An experimental ``striker confinement'' shock compression test was developed in the Glumac-group at the University of Illinois to study ignition and reaction in composite reactive materials. These include thermitic and intermetallic reactive powders. The test places a sample of materials such as a thermite mixture of copper oxide and aluminum powders that are initially compressed to about 80 percent full density. Two RP-80 detonators simultaneously push steel bars into reactive material and the resulting compression causes shock compaction of the material and rapid heating. At that point one observes significant reaction and propagation of fronts. But the fronts are peculiar in that they are comprised of reactive events that can be traced to the reaction/diffusion of the initially separated reactants of copper oxide and aluminum that react at their mutual interfaces that nominally make copper liquid and aluminum oxide products. We discuss our model of the shock ignition of the copper oxide aluminum thermite in the context of the striker experiment and how a Gibbs formulation model, that includes multi-components for liquid and solid phases of aluminum, copper oxide, copper and aluminum oxide can predict the events observed at the particle scale in the experiments. Supported by HDTRA1-10-1-0020 (DTRA), N000014-12-1-0555 (ONR).

  5. Self-supported aluminum thin films produced by vacuum deposition process

    NASA Technical Reports Server (NTRS)

    Neff, J. E.; Timme, R. W.

    1966-01-01

    Self-supported aluminum thin film is produced by vacuum depositing the film on a polyvinyl formal resin film and then removing the resin by radiant heating in the vacuum. The aluminum film can be used as soon as the resin is eliminated.

  6. Electron-stimulated desorption study of hydrogen-exposed aluminum films

    NASA Technical Reports Server (NTRS)

    Park, CH.; Bujor, M.; Poppa, H.

    1984-01-01

    H2 adsorption of evaporated clean and H2-exposed aluminum films is investigated by using the electron-stimulated desorption (ESD) method. A strong H(+)ESD signal is observed on a freshly evaporated aluminum surface which is clean according to previously proposed cleanlines criteria. An increased H(+) yield on H2 exposure is also observed. However, the increasing rate of H(+) emission could be directly correlated with small increases in H2O partial pressure during H2 exposure. It is proposed that the oxidation of aluminum by water vapor and subsequent adsorption of H2 or water is the primary process of the enhanced high H(+) yield during H2 exposure.

  7. Optical Studies of Defects in Aluminum Oxide.

    NASA Astrophysics Data System (ADS)

    James, Floyd Jasper

    Defects in aluminum oxide single crystals were studied using optical absorption, photoluminescence, and thermally stimulated luminescence. The primary defect in Al(,2)O(,3) is the oxygen vacancy. A vacancy trapping 2 electrons, the F center, absorbs at 6.0 eV, and the F('+) center, trapping 1 electron, absorbs at 4.8 eV, 5.4 eV, and possibly 6.1 eV. Neutron bombardment produces F and F('+) centers, while electron bombardment or treatment by growth in a reducing atmosphere makes predominantly F centers. Isochronal and isothermal anneals of neutron-irradiated material show no discrete stages in the annealing of the oxygen vacancy, as monitored by the decrease in optical absorption of the F center, and so no activation energy for the process could be determined. Photoluminescence studies of neutron-irradiated, additively colored, electron irradiated, and growth colored crystals shows the mainly the 6.0 eV - 3.0 eV F center absorption-emission pair, while bombarded samples show reduced F emission, and also F('+) emissions, including the dominant 4.8 - 3.2 eV peak. By using computer controlled excitation and analyzing monochromators, luminescence peak detection was improved, and several new absorption-emission pairs were found. Thermally stimulated luminescence (TSL) was conducted from 77 K to room temperature on growth-colored and non growth-colored samples, using ultraviolet light as the exciting agent. The common 260 K TSL peak is largest at 6.0 eV in exciting wavelength, and shows emission similar to that of the F center. This was not seen in a crystal not containing F centers. Also, a peak at 230 K can be produced in growth-colored crystals by bleaching at about 200 K.

  8. Preparation of micro/nano-structure superhydrophobic film on aluminum plates using galvanic corrosion method.

    PubMed

    Wu, Ruomei; Chao, Guang Hua; Jiang, Haiyun; Pan, Anqiang; Chen, Hong; Yuan, Zhiqing; Liu, Qilong

    2013-10-01

    A simple and novel approach has been developed to obtain a microporous film with compound nanoparticles on the surface of aluminum alloy substrate using the galvanic corrosion method. The wettability of the surface changes from hydrophilicity to superhydrophobicity after chemical modification with stearic acid (SA). The water contact angle (WCA) and sliding angle (WSA) of superhydrophobic aluminum alloy surface (SAAS) are 154 degrees and 9 degrees, respectively. The roughness of the aluminum substrate increases after the oxidation reaction. The porous aluminum matrix surface is covered with irregularly shaped holes with a mean radius of about 15 microm, similar to the surface papillae of natural Lotus leaf, with villus-like nanoparticles array on pore surfaces. The superhydrophobic property is attributed to this special surface morphology and low surface energy SA. X-ray powder diffraction (XRD) pattern and Energy Dispersive X-Ray Spectroscopy (EDS) spectrum indicate that Al2O3, Al(OH)3 and AIO(OH) has been formed on the surface of aluminum substrate after the oxidation reaction. The Raman spectra indicate that C-H bond from SA and the Al-O are formed on the SAAS. The as-formed SAAS has good stability. PMID:24245140

  9. A Conducting Polymer Film Stronger Than Aluminum

    NASA Astrophysics Data System (ADS)

    Shi, Gaoquan; Jin, Shi; Xue, Gi; Li, Cun

    1995-02-01

    Polythiophene (Pth) was electrochemically deposited onto stainless steel substrate from freshly distilled boron fluoride-ethyl ether containing 10 millimoles of thiophene per liter. The free-standing Pth film obtained at an applied potential of 1.3 volts (versus Ag/AgCl) had a conductivity of 48.7 siemens per centimeter. Its tensile strength (1200 to 1300 kilograms per square centimeter) was greater than that of aluminium (1000 to 1100 kilograms per square centimeter). This Pth film behaves like a metal sheet and can be easily cut into various structures with a knife or a pair of scissors.

  10. Ion-induced oxidation of aluminum during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kreiter, Oliver; Grosse-Kreul, Simon; Corbella, Carles; von Keudell, Achim

    2013-04-01

    Particle beam experiments were conducted in an ultra-high-vacuum vessel to mimic target poisoning during reactive magnetron sputtering of aluminum. Aluminum targets were exposed to quantified beams of argon ions, oxygen atoms and molecules, and aluminum vapour. The growth and etch rates were measured in situ by means of an Al-coated quartz crystal microbalance. The chemical state of the target surface was monitored in-situ by real-time Fourier transform infrared spectroscopy. The surface processes were modelled through a set of balance equations providing sputter yields and sticking coefficients. The results indicate that the oxygen uptake of the aluminum surface is enhanced by a factor 1 to 2 by knock-on implantation and that the deposition of aluminum is not affected by the oxidation state of the surface.

  11. Pronounced Linewidth Narrowing of an Aluminum Nanoparticle Plasmon Resonance by Interaction with an Aluminum Metallic Film.

    PubMed

    Sobhani, Ali; Manjavacas, Alejandro; Cao, Yang; McClain, Michael J; García de Abajo, F Javier; Nordlander, Peter; Halas, Naomi J

    2015-10-14

    Aluminum nanocrystals and fabricated nanostructures are emerging as highly promising building blocks for plasmonics in the visible region of the spectrum. Even at the individual nanocrystal level, however, the localized plasmons supported by Al nanostructures possess a surprisingly broad spectral response. We have observed that when an Al nanocrystal is coupled to an underlying Al film, its dipolar plasmon resonance linewidth narrows remarkably and shows an enhanced scattering efficiency. This behavior is observable in other plasmonic metals, such as gold; however, it is far more dramatic in the aluminum nanoparticle-film system, reducing the dipolar plasmon linewidth by more than half. A substrate-mediated hybridization of the dipolar and quadrupolar plasmons of the nanoparticle reduces the radiative losses of the dipolar plasmon. While this is a general effect that applies to all metallic nanoparticle-film systems, this finding specifically provides a new mechanism for narrowing plasmon resonances in aluminum-based systems, quite possibly expanding the potential of Al-based plasmonics in real-world applications. PMID:26383818

  12. BONDING ALUMINUM METALS

    DOEpatents

    Noland, R.A.; Walker, D.E.

    1961-06-13

    A process is given for bonding aluminum to aluminum. Silicon powder is applied to at least one of the two surfaces of the two elements to be bonded, the two elements are assembled and rubbed against each other at room temperature whereby any oxide film is ruptured by the silicon crystals in the interface; thereafter heat and pressure are applied whereby an aluminum-silicon alloy is formed, squeezed out from the interface together with any oxide film, and the elements are bonded.

  13. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    SciTech Connect

    Fiorentino, Giuseppe Morana, Bruno; Forte, Salvatore; Sarro, Pasqualina Maria

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  14. Transparent Conductive Oxides in Thin Film Photovoltaics

    NASA Astrophysics Data System (ADS)

    Hamelmann, Frank U.

    2014-11-01

    This paper show results from the development of transparent conductive oxides (TCO's) on large areas for the use as front electrode in thin film silicon solar modules. It is focused on two types of zinc oxide, which are cheap to produce and scalable to a substrate size up to 6 m2. Low pressure CVD with temperatures below 200°C can be used for the deposition of boron doped ZnO with a native surface texture for good light scattering, while sputtered aluminum doped ZnO needs a post deposition treatment in an acid bath for a rough surface. The paper presents optical and electrical characterization of large area samples, and also results about long term stability of the ZnO samples with respect to the so called TCO corrosion.

  15. Mueller Matrix of Specular Reflection Using an Aluminum Grating Surface with Oxide Nanofilm.

    PubMed

    Qiu, Jun; Ran, Dongfang; Liu, Linhua; Hsu, Pei-Feng

    2016-06-01

    The accurate nondestructive and real-time determination of the critical dimensions of oxide nanofilms on periodic nanostructures has potential applications in nanofabrication techniques. Mueller ellipsometry is fast, accurate, nondestructive, and can be used in the ambient air. This study used the elements of a Mueller matrix of specular reflection, which is based on a Mueller ellipsometry method, to evaluate the thickness of an oxide nanofilm on an aluminum grating surface. By using non-traditional rigorous coupled-wave analysis (RCWA), we decomposed the Mueller matrix to obtain the relationship between the evaluated polarization properties of reflected light and the dimensions of oxide nanofilms on aluminum grating surfaces. We also quantitatively analyzed the Mueller matrix elements' variation due to the thicknesses of top, sidewall, and bottom oxides. We consider these oxide films are naturally formed and of nonuniform thickness on grating structures. The results show that the elements of Mueller matrix shift with the increasing of the uniform thickness of oxide at a fixed wavelength. Moreover, as oxide nanofilms on grating structures are nonuniform, the impact of the thickness of side wall oxide on the Mueller matrix elements is more obvious than that of top and bottom oxides at the relative larger incidence wavelength range. The finding of this work may facilitate the nondestructive and real-time measurement of the thickness of oxide nanofilms on metal gratings where the metal is easily oxidized. PMID:27129364

  16. Bottom-Up Preparation of Ultrathin 2D Aluminum Oxide Nanosheets by Duplicating Graphene Oxide.

    PubMed

    Huang, Zhifeng; Zhou, Anan; Wu, Jifeng; Chen, Yunqiang; Lan, Xiaoli; Bai, Hua; Li, Lei

    2016-02-24

    2D ultrathin aluminum oxide (2D-Al2O3) nanosheets are prepared by duplicating graphene oxide. An amorphous precursor of the hydroxide of aluminum is first deposited onto graphene oxide sheets, which are then converted into 2D-Al2 O3 nanosheets by calcination, while the graphene oxide is removed. The 2D-Al2O3 nanosheets have a large specific surface area and a superior adsorption capacity to fluoride ions. PMID:26678843

  17. Oxidation of aluminum particles in the presence of water.

    PubMed

    Schoenitz, Mirko; Chen, Chi-Mon; Dreizin, Edward L

    2009-04-16

    Oxidation of spherical aluminum powder was investigated in mixed argon-oxygen-steam atmospheres by thermogravimetric measurements at heating rates between 1 and 20 K/min and up to 1100 degrees C. The observed oxidation behavior in the presence of steam differs markedly from oxidation in dry oxygen. Oxidation in steam is complete near 1000 degrees C vs 1500 degrees C in dry oxygen. Furthermore, in steam, a stepwise weight change is observed at the melting point of aluminum, while no such step can be distinguished in dry oxygen. The complete oxidation observed at a lower temperature in steam as compared to dry oxygen is explained by the stabilization of the gamma polymorph of the surface oxide in the presence of water so that a denser and slower growing alpha-alumina does not form until higher temperatures. Experiments in mixed oxygen/steam oxidizers showed that the size of the oxidation step observed upon aluminum melting only correlates with the concentration of steam in the atmosphere. This may be interpreted as the effect of transient porosity, the degree of which is controlled by the steam concentration, or the surface oxide stressed by the expanding melting metal core may behave as a semipermeable membrane where hydrous species have significantly higher diffusion rates than oxygen. A clear distinction cannot be drawn, and further research is warranted. Preliminary results on isoconversion processing of the oxidation kinetics are presented. PMID:19309144

  18. Fabrication of nano-structured super-hydrophobic film on aluminum by controllable immersing method

    NASA Astrophysics Data System (ADS)

    Wu, Ruomei; Liang, Shuquan; Pan, Anqiang; Yuan, Zhiqing; Tang, Yan; Tan, Xiaoping; Guan, Dikai; Yu, Ya

    2012-06-01

    Aluminum alloy surface can be etched easily in acid environment, but the microstructure of alloy surface hardly meets the customers' demand. In this work, a facile acidic-assistant surface oxidation technique has been employed to form reproducible super-hydrophobic surfaces on aluminum alloy plates. The samples immersed in three different acid solutions at ambient temperatures are studied and the results demonstrated that the aqueous mixture solution of oxalic acid and hydrochloric is easier to produce better faces and better stability. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectrometer, X-ray photoelectron spectroscopy (XPS) and water contact angle measurement are used to investigate the morphologies, microstructures, chemical compositions and hydrophobicity of the produced films on aluminum substrates. The surfaces, configured of a labyrinth structure with convexity and concavity, are in different roughness and gloss because of the different recipe acid solutions used. Better roughness of the surface can be obtained by adjusting the concentration of Clˉ and oxalate ions in acid solutions. The present research work provides a new strategy for the controllable preparation super-hydrophobic films of general materials on aluminum alloy for practical industrial applications.

  19. Alginate-magnesium aluminum silicate composite films: effect of film thickness on physical characteristics and permeability.

    PubMed

    Pongjanyakul, Thaned; Puttipipatkhachorn, Satit

    2008-01-01

    The different film thicknesses of the sodium alginate-magnesium aluminum silicate (SA-MAS) microcomposite films were prepared by varying volumes of the composite dispersion for casting. Effect of film thickness on thermal behavior, solid-state crystallinity, mechanical properties, water uptake and erosion, and water vapor and drug permeability of the microcomposite films were investigated. The film thickness caused a small change in thermal behavior of the films when tested using DSC and TGA. The crystallinity of the thin films seemed to increase when compared with the thick films. The thin films gave higher tensile strength than the thick films, whereas % elongation of the films was on the contrary resulted in the lower Young's modulus of the films when the film thickness was increased. This was due to the weaker of the film bulk, suggesting that the microscopic matrix structure of the thick films was looser than that of the thin films. Consequently, water uptake and erosion, water vapor permeation and drug diffusion coefficient of the thick films were higher than those of the thin films. The different types of drug on permeability of the films also showed that a positive charge and large molecule of drug, propranolol HCl, had higher lag time and lower diffusion coefficient that acetaminophen, a non-electrolyte and small molecule. This was because of a higher affinity of positive charge drug on MAS in the films. The findings suggest that the evaporation rate of solvent in different volumes of the composite dispersion used in the preparation method could affect crystallinity and strength of the film surface and film bulk of the microcomposite films. This led to a change in water vapor and drug permeability of the films. PMID:17611056

  20. Optimization study of the femtosecond laser-induced forward-transfer process with thin aluminum films

    NASA Astrophysics Data System (ADS)

    Bera, Sudipta; Sabbah, A. J.; Yarbrough, J. M.; Allen, C. G.; Winters, Beau; Durfee, Charles G.; Squier, Jeff A.

    2007-07-01

    The parameters for an effective laser-induced forward-transfer (LIFT) process of aluminum thin films using a femtosecond laser are studied. Deposited feature size as a function of laser fluence, donor film thickness, quality of focus, and the pulse duration are varied, providing a metric of the most desirable conditions for femtosecond LIFT with thin aluminum films.

  1. Impurity-defect structure of anodic aluminum oxide produced by two-sided anodizing in tartaric acid

    NASA Astrophysics Data System (ADS)

    Chernyakova, K. V.; Vrublevsky, I. A.; Ivanovskaya, M. I.; Kotsikau, D. A.

    2012-03-01

    Porous aluminum oxide is prepared in a 0.4 M aqueous solution of tartaric acid by two-sided anodizing. Fourier Transform IR spectroscopy (FTIR) data reveal the presence, in the alumina, of unoxidized tartarate ions, as well as products of their partial (radical organic products and CO) and complete (CO2) oxidation. Carboxylate ions and elemental carbon contained in the anodic oxide impart a gray color to the films.

  2. The Strength of the Metal. Aluminum Oxide Interface

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1984-01-01

    The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

  3. The anodizing behavior of aluminum in malonic acid solution and morphology of the anodic films

    NASA Astrophysics Data System (ADS)

    Ren, Jianjun; Zuo, Yu

    2012-11-01

    The anodizing behavior of aluminum in malonic acid solution and morphology of the anodic films were studied. The voltage-time response for galvanostatic anodization of aluminum in malonic acid solution exhibits a conventional three-stage feature but the formation voltage is much higher. With the increase of electrolyte concentration, the electrolyte viscosity increases simultaneously and the high viscosity decreases the film growth rate. With the concentration increase of the malonic acid electrolyte, the critical current density that initiates local "burning" on the sample surface decreases. For malonic acid anodization, the field-assisted dissolution on the oxide surface is relatively weak and the nucleation of pores is more difficult, which results in greater barrier layer thickness and larger cell dimension. The embryo of the porous structure of anodic film has been created within the linear region of the first transient stage, and the definite porous structure has been established before the end of the first transient stage. The self-ordering behavior of the porous film is influenced by the electrolyte concentration, film thickness and the applied current density. Great current density not only improves the cell arrangement order but also brings about larger cell dimension.

  4. The effect of surface oxide layer on the rate of hydrogen emission from aluminum and its alloys in a high vacuum

    NASA Technical Reports Server (NTRS)

    Makarova, V. I.; Zyabrev, A. A.

    1979-01-01

    The influence of surface oxide layers on the kinetics of hydrogen emission at the high vacuum of 10 to the minus 8th power torr was investigated at temperatures from 20 to 450 C using samples of pure AB00 aluminum and the cast alloy AMg. Cast and deformed samples of AMts alloy were used to study the effect of oxide film thickness on the rate of hydrogen emission. Thermodynamic calculations of the reactions of the generation and dissociation of aluminum oxide show that degasification at elevated temperatures (up to 600 C) and high vacuum will not reduce the thickness of artificially-generated surface oxide layers on aluminum and its alloys.

  5. Morphology and water-barrier properties of silane films on aluminum and silicon

    SciTech Connect

    Pan, Guirong; Schaefer, Dale W.

    2010-12-03

    The goal of this study is to understand the effect of the substrate on the morphology and water-barrier properties of bis-silane films. Silane films are deposited on both Si and Al. Neutron reflectivity is used to assess the effect of hydrothermal conditioning on the films. Aluminum on silicon (no silane) was characterized first to facilitate understanding of the more complicated silane on Al-coated Si. A 200-{angstrom} Al layer with 55-{angstrom} oxide covers the surface of the silicon wafer. The reflectivity data show that water penetrates into the oxide layer. Silane films deposited on either Al or Si substrates have similar bulk and top-surface morphology. Studies of silanes on Si wafers, therefore, can be generalized to include Al. The substrate-silane interface, however, does depend on both the substrate and the silane. Because pH of the bis-sulfur silane solution is outside of the stability range for Al{sub 2}O{sub 3}, dissolution of the thin oxide film occurs during solution deposition. A water-depletion area is formed at the interface region due to this reaction.

  6. Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals

    DOEpatents

    Buonsanti, Raffaella; Milliron, Delia J

    2015-02-24

    The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.

  7. Use of aluminum as an oxidation barrier for titanium

    NASA Technical Reports Server (NTRS)

    Unnam, J.; Shenoy, R. N.; Wiedemann, K. E.; Clark, R. K.

    1985-01-01

    A study is conducted of the use of aluminum coatings as oxidation retardants for Ti alloys, using room temperature normal emittance and spectral emittance as bases for the characterization of oxidation properties with and without the coatings. Thermal exposures were conducted in a thermogravimetric analysis apparatus in which specimen weight was continuously monitored. The results obtained indicate that the weight gains are proportional to the square root of the time for uncoated alloys and for 649 C-exposed aluminum-coated alloys. For the 704 C-exposed aluminum-coated alloys, weight gain exhibits a low rate for short and a high rate for long exposure times, implying that the 0.5-micron coating's protection decreases for long exposures at this temperature.

  8. The Identification of Stable Reaction Intermediates on Aluminum Oxide Surfaces with Inelastic Electron Tunneling Spectroscopy

    NASA Astrophysics Data System (ADS)

    Templeton, Michael Karpovich

    The stable surface intermediates that were formed in several heterogeneous reactions on aluminum oxide films were identified with inelastic electron tunneling spectroscopy. The alumina films were synthesized by the plasma oxidation of aluminum metal films. The temperature and exposure dependent interaction of cyclopropane carboxylic acid with alumina films was studied. Cyclopropane carboxylate and n-butane carboxylate were the only adsorbed species formed. The n-butane carboxylate results from hydrogenolysis of the cyclopropyl ring of the adsorbed cyclopropane carboxylate with hydrogen supplied by surface hydroxyl groups. The relative populations of the two surface species are strongly dependent upon coverage and temperature. The adsorption of gaseous dimethyl methyl phosphonate (DMMP) on alumina films was investigated. Surface temperatures ranged between 200 K and 673 K, and exposures ranged between 3 x 10('-4) and 10 Torr-s. Tunneling spectra of deuterium labeled DMMP, perdeutero methyl alcohol, methyl methyl phosphonic acid, methyl phosphonic acid and trimethyl phosphine oxide, all adsorbed on aluminum oxide surfaces, were used to clarify the structures of the species resulting from the adsorption and decomposition of DMMP. At 200 K, DMMP is adsorbed molecularly with high surface coverages. At surface temperatures above 295 K, DMMP is adsorbed dissociatively in low coverages. Surface temperatures above 473 K lead to the dealkylation of the dissociatively adsorbed adspecies, which results in the formation of adsorbed methyl phosphonate. The adsorption and reaction of three phosphonate esters on alumina films was comparatively examined. The phosphonate esters were diisopropyl methyl phosphonate (DIMP), dimethyl methyl phosphonate (DMMP) and diphenyl methyl phosphonate (DPMP). The adsorption temperatures ranged from 200 to 673 K. At 373 K, DIMP was found to adsorb dissociatively in low coverages as isopropyl methyl phosphonate. Above 373 K the isopropyl methyl

  9. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    NASA Astrophysics Data System (ADS)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-07-01

    Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using µ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  10. Aluminum oxide filler prevents obstructions in tubing during welding

    NASA Technical Reports Server (NTRS)

    Okelly, K. P.

    1966-01-01

    Granular aluminum oxide is used as filler in serpentine tubing while welding the tubing to a flat surface. The filler eliminates obstructions in the tubes formed by molten weld nuggets and is porous enough to allow gases to escape from the welding area.

  11. OXYANION SORPTION TO HIGH SURFACE AREA IRON AND ALUMINUM OXIDES

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Sorption of selected oxyanions (Mo, As, and P) to high surface area iron and aluminum oxides was investigated using in situ Raman and ATR-FTIR spectroscopy, batch sorption methods, electrophoretic mobility measurements, and surface complexation modeling. In situ ATR-FTIR and Raman spectra were coup...

  12. Identity of Passive Film Formed on Aluminum in Li-ion BatteryElectrolytes with LiPF6

    SciTech Connect

    Zhang, Xueyuan; Devine, T.M.

    2006-09-01

    The passive film that forms on aluminum in 1:1 ethylene carbonate + ethylmethyl carbonate with 1.2M LiPF{sub 6} and 1:1 ethylene carbonate + dimethyl carbonate with 1.0M LiPF{sub 6} was investigated by a combination of electrochemical quartz crystal microbalance measurements (EQCM), electrochemical impedance spectroscopy (EIS), and x-ray photoelectron spectroscopy. During anodic polarization of aluminum a film of AlF{sub 3} forms on top of the air-formed oxide, creating a duplex, or two-layered film. The thickness of the AlF{sub 3} increases with the applied potential. Independent measurements of film thickness by EQCM and EIS indicate that at a potential of 5.5V vs. Li/Li{sup +}, the thickness of the AlF{sub 3} is approximately 1 nm.

  13. Effect of intermetallic phases on the anodic oxidation and corrosion of 5A06 aluminum alloy

    NASA Astrophysics Data System (ADS)

    Li, Song-mei; Li, Ying-dong; Zhang, You; Liu, Jian-hua; Yu, Mei

    2015-02-01

    Intermetallic phases were found to influence the anodic oxidation and corrosion behavior of 5A06 aluminum alloy. Scattered intermetallic particles were examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) after pretreatment. The anodic film was investigated by transmission electron microscopy (TEM), and its corrosion resistance was analyzed by electrochemical impedance spectroscopy (EIS) and Tafel polarization in NaCl solution. The results show that the size of Al-Fe-Mg-Mn particles gradually decreases with the iron content. During anodizing, these intermetallic particles are gradually dissolved, leading to the complex porosity in the anodic film beneath the particles. After anodizing, the residual particles are mainly silicon-containing phases, which are embedded in the anodic film. Electrochemical measurements indicate that the porous anodic film layer is easily penetrated, and the barrier plays a dominant role in the overall protection. Meanwhile, self-healing behavior is observed during the long immersion time.

  14. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  15. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  16. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  17. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  18. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  19. Reduction of Oxidative Melt Loss of Aluminum and Its Alloys

    SciTech Connect

    Dr. Subodh K. Das; Shridas Ningileri

    2006-03-17

    This project led to an improved understanding of the mechanisms of dross formation. The microstructural evolution in industrial dross samples was determined. Results suggested that dross that forms in layers with structure and composition determined by the local magnesium concentration alone. This finding is supported by fundamental studies of molten metal surfaces. X-ray photoelectron spectroscopy data revealed that only magnesium segregates to the molten aluminum alloy surface and reacts to form a growing oxide layer. X-ray diffraction techniques that were using to investigate an oxidizing molten aluminum alloy surface confirmed for the first time that magnesium oxide is the initial crystalline phase that forms during metal oxidation. The analytical techniques developed in this project are now available to investigate other molten metal surfaces. Based on the improved understanding of dross initiation, formation and growth, technology was developed to minimize melt loss. The concept is based on covering the molten metal surface with a reusable physical barrier. Tests in a laboratory-scale reverberatory furnace confirmed the results of bench-scale tests. The main highlights of the work done include: A clear understanding of the kinetics of dross formation and the effect of different alloying elements on dross formation was obtained. It was determined that the dross evolves in similar ways regardless of the aluminum alloy being melted and the results showed that amorphous aluminum nitride forms first, followed by amorphous magnesium oxide and crystalline magnesium oxide in all alloys that contain magnesium. Evaluation of the molten aluminum alloy surface during melting and holding indicated that magnesium oxide is the first crystalline phase to form during oxidation of a clean aluminum alloy surface. Based on dross evaluation and melt tests it became clear that the major contributing factor to aluminum alloy dross was in the alloys with Mg content. Mg was

  20. Thick film fabrication of aluminum nitride microcircuits. Final report

    SciTech Connect

    Perdieu, L.H.

    1994-03-01

    A new substrate material, aluminum nitride (AlN), and 11 new thick film inks were analyzed to determine their chemical compatibility, their electrical properties, their mechanical properties, and their overall suitability for use in the manufacturing of high-power microcircuits with efficient thermal properties. Because high-power chips emit a great deal of heat in a small surface area, a new substrate material was needed to dissipate that heat faster than the substrate material currently in use. Overall, the new materials were found to be acceptable for accomplishing this purpose.

  1. Drilling of aluminum and copper films with femtosecond double-pulse laser

    NASA Astrophysics Data System (ADS)

    Wang, Qinxin; Luo, Sizuo; Chen, Zhou; Qi, Hongxia; Deng, Jiannan; Hu, Zhan

    2016-06-01

    Aluminum and copper films are drilled with femtosecond double-pulse laser. The double-pulse delay is scanned from -75 ps to 90 ps. The drilling process is monitored by recording the light transmitted through the sample, and the morphology of the drilled holes is analyzed by optical microscopy. It is found that, the breakthrough time, the hole evolution during drilling, the redeposited material, the diameters of the redeposited area and the hole, change as functions of double-pulse delay, and are different for the two metals. Along the double-pulse delay axis, three different time constants are observed, a slow one of a few tens of picoseconds, a fast one of a few picoseconds, and an oscillation pattern. Results are discussed based on the mechanisms of plasma shielding, electron-phonon coupling, strong coupling of laser with liquid phase, oxidation of aluminum, laser induced temperature and pressure oscillations, and the atomization of plume particles.

  2. Effect of processing on structural features of anodic aluminum oxides

    NASA Astrophysics Data System (ADS)

    Erdogan, Pembe; Birol, Yucel

    2012-09-01

    Morphological features of the anodic aluminum oxide (AAO) templates fabricated by electrochemical oxidation under different processing conditions were investigated. The selection of the polishing parameters does not appear to be critical as long as the aluminum substrate is polished adequately prior to the anodization process. AAO layers with a highly ordered pore distribution are obtained after anodizing in 0.6 M oxalic acid at 20 °C under 40 V for 5 minutes suggesting that the desired pore features are attained once an oxide layer develops on the surface. While the pore features are not affected much, the thickness of the AAO template increases with increasing anodization treatment time. Pore features are better and the AAO growth rate is higher at 20 °C than at 5 °C; higher under 45 V than under 40 V; higher with 0.6 M than with 0.3 M oxalic acid.

  3. Electrochromism in nickel oxide films

    SciTech Connect

    Wruck, D.A.

    1991-01-01

    Optical absorption in a thin-film nickel oxide electrode depends on the state of charge of the electrode; the effect has been called electrochromism, and it may have practical applications in low-speed light modulation devices. In this dissertation, the physical and chemical processes which lead to the change in optical properties are investigated. Preparation of NiO film electrodes by reactive sputtering of a Ni target in an Ar + O[sub 2] gas mixture is described, and the electrochromic response is correlated to film growth conditions. Structural, electronic, and electrochemical properties of the NiO films are characterized by x-ray diffraction, infrared absorption, x-ray photoemission, optical absorption, electrical conductivity, and electrochemical measurements. It is proposed that the electrochromism results from the adsorption and desorption of protons at the oxygen-rich surface of a granular and porous NiO film. The surface electronic levels are then modified by the presence or absence of the O-H bonds, and the effect on the film electronic properties is discussed. A general discussion is also given of the current-limiting processes at the NiO film electrodes.

  4. Effect of grain size on the melting point of confined thin aluminum films

    NASA Astrophysics Data System (ADS)

    Wejrzanowski, Tomasz; Lewandowska, Malgorzata; Sikorski, Krzysztof; Kurzydlowski, Krzysztof J.

    2014-10-01

    The melting of aluminum thin film was studied by a molecular dynamics (MD) simulation technique. The effect of the grain size and type of confinement was investigated for aluminum film with a constant thickness of 4 nm. The results show that coherent intercrystalline interface suppress the transition of solid aluminum into liquid, while free-surface gives melting point depression. The mechanism of melting of polycrystalline aluminum thin film was investigated. It was found that melting starts at grain boundaries and propagates to grain interiors. The melting point was calculated from the Lindemann index criterion, taking into account only atoms near to grain boundaries. This made it possible to extend melting point calculations to bigger grains, which require a long time (in the MD scale) to be fully molten. The results show that 4 nm thick film of aluminum melts at a temperature lower than the melting point of bulk aluminum (933 K) only when the grain size is reduced to 6 nm.

  5. Process for fabrication of metal oxide films

    SciTech Connect

    Tracy, C.E.; Benson, D.; Svensson, S.

    1990-07-17

    This invention is comprised of a method of fabricating metal oxide films from a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of metal oxides, e.g. electro-optically active transition metal oxides, at a high deposition rate. The presence of hydrogen during the plasma reaction enhances the deposition rate of the metal oxide. Various types of metal oxide films can be produced.

  6. Passivation effects of atomic-layer-deposited aluminum oxide

    NASA Astrophysics Data System (ADS)

    Kotipalli, R.; Delamare, R.; Poncelet, O.; Tang, X.; Francis, L. A.; Flandre, D.

    2013-09-01

    Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012-1013 cm-2) in combination with a low density of interface states (Dit). This paper investigates the passivation quality of thin (15 nm) Al2O3 films deposited by two different techniques: plasma-enhanced atomic layer deposition (PE-ALD) and Thermal atomic layer deposition (T-ALD). Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2) (20 nm), SiO2 (20 nm) deposited by plasma-enhanced chemical vapour deposition (PECVD) and hydrogenated amorphous silicon nitride (a-SiNx:H) (20 nm) also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS) capacitors were fabricated for Qf and Dit extraction through Capacitance-Voltage-Conductance (C-V-G) measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV). The influence of extracted C-V-G parameters (Qf,Dit) on the injection dependent lifetime measurements τ(Δn), and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

  7. Atomic layer deposition of the aluminum oxide-yttrium oxide pseudo-binary system

    NASA Astrophysics Data System (ADS)

    Rowland, Jason Conrad

    The growth of thin films of selected phases from the pseudo-binary Al 2O3-Y2O3 material system was demonstrated using atomic layer deposition (ALD). Specifically ALD growth of Al2O 3, Y2O3, Ce2O3, Y2 Al4O12 (Yttrium Aluminum Monoclinic - YAM), and Y3Al5O12 (Yttrium Aluminum Garnet - YAG) was accomplished. All films were grown using the same precursors: AlCl 3 at 105°C and H2O, Y(thd)3 [thd = 2,2,6,6-tetramethyl-3,5-heptanedione] at 140°C and O3, and Ce(acac)3 [acac = acetylacetonate] at 140°C, and O3. The Al2O3 films were grown at substrate temperatures from 295°C to 515°C. A surface-controlled growth temperature 'window' (ALD window) was found for Al 2O3 between 365°C to 465°C using AlCl3 and H2O. The resultant films grown at all temperatures were amorphous as characterized by X-ray diffraction, and showed a rough surface morphology. The growth rate was determined to be 1 A/cycle within the ALD 'window'. The thickness of films grown in the ALD 'window' varied linearly with the number of cycles. Films up to 1 microm thick were grown (10,000 cycles). The Y2O3 films were grown at substrate temperatures ranging from 200°C to 500°C. No surface-controlled growth temperature window could be determined using Y(thd)3 and O3. The resultant films were polycrystalline with a cubic structure and a smooth surface morphology. The growth rate was determined to be 3 pm/cycle at 350°C. Films up to 30 nm thick were grown (10,000 cycles). Atomic layer deposition of Ce2O3 thin films were also studied because Ce3+ is often used as a luminescent rare earth dopant in YAG and YAM. The Ce2O3 films were grown at substrate temperatures from 200°C to 500°C. No surface-controlled growth temperature window could be found using Ce(acac)3 and O 3. The resultant films had a rough surface morphology. Using X-ray photoelectron spectroscopy (XPS), it was determined that the Ce3+ oxidation state was present in the as-deposited films rather than Ce4+. When included in the growth process for

  8. Spotting 2D atomic layers on aluminum nitride thin films.

    PubMed

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers. PMID:26422387

  9. Spotting 2D atomic layers on aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Raghavan, Srinivasan

    2015-10-01

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  10. An XPS study of the stability of Fomblin Z25 on the native oxide of aluminum. [x ray photoelectron spectroscopy

    NASA Technical Reports Server (NTRS)

    Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

    1991-01-01

    Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum and sapphire surfaces, and their behavior at different temperatures was studied using x ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that the interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. Our conclusion is that the native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At high temperatures (150 C) degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formulation of a debris layer.

  11. X-ray photoelectron spectroscopy study of the stability of Fomblin Z25 on the native oxide of aluminum

    NASA Technical Reports Server (NTRS)

    Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

    1992-01-01

    Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum, and onto sapphire surfaces, and their behavior at different temperatures was studied using X-ray photoelectron spectroscopy and temperature desorption spectroscopy (TDS). The interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on the clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. The native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At higher temperatures (150 C), degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formation of a debris layer.

  12. Durability of self-assembled monolayers on aluminum oxide surface for determining surface wettability

    NASA Astrophysics Data System (ADS)

    Lee, Jaejun; Bong, Jihye; Ha, Young-Geun; Park, Sangyoon; Ju, Sanghyun

    2015-03-01

    The durable non-wettability of functionalized aluminum oxide (Al2O3) thin films coated with two different self-assembled monolayers (SAMs), phosphonic acid (HDF-PA) and trichlorosilane (HDF-S), was investigated by a water flow test method. After exposing the surface to 5 L of water droplets, the contact angle of HDF-S coated Al2O3 thin films remained at the initial value of ∼102.7°, while the contact angle of HDF-PA coated Al2O3 thin films decreased from an initial value of ∼99.9° to a value of ∼69.3°. Thermal annealing effect at various temperature post formation of the self-assembled HDF-PA on the Al2O3 were investigated and shown to enhance the durability of SAMs with a constant contact angle (∼100°) annealed at 100-150 °C.

  13. Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states

    SciTech Connect

    Mibus, M.; Zangari, G.; Jensen, C.; Hu, X.; Reed, M. L.; Knospe, C.

    2014-06-16

    The electronic and ionic transports in 32–56 nm thick anodic aluminum oxide films are investigated before and after a 1-h anneal at 200–400 °C in argon. Results are correlated to their defect density as measured by the Mott-Schottky technique. Solid state measurements show that electronic conduction upon annealing is hindered by an increase in the Schottky emission barrier, induced by a reduction in dopant density. Using an electrochemical contact, the films fail rapidly under cathodic polarization, unless defect density is decreased down to 10{sup 17} cm{sup −3}, resulting in a three order of magnitude reduction in current and no visible gas evolution. Under anodic polarization, the decrease in defect density delays the onset of ionic conduction as well as further oxide growth and failure.

  14. Development of topologically structured membranes of aluminum oxide

    NASA Astrophysics Data System (ADS)

    Bankova, A.; Videkov, V.; Tzaneva, B.

    2014-05-01

    In recent years, nanomembranes have become one of the most widely used construction material for ultrasensitive and ultrathin applications in micro-electromechanical systems (MEMS) and other sensor structures due to their remarkable mechanical properties. Among these, the mechanical stability is of particular importance. We present an approach to the analysis of the stability of nanostructured anodic aluminum oxide free membranes subjected to mechanical bending. The membranes tested were with a thickness of 500 nm to 15 urn in various topological shapes; we describe the technological schemes of their preparation. Bends were applied to membranes prepared by using a selective process of etching and anodizing. The results of the preparation of the membranes are discussed, together with the influence of the angle of deflection, and the number of bendings. The results obtained can be used in designing MEMS structures and sensors which use nanostructured anodic aluminum oxide.

  15. Formation of Nanoporous Anodic Alumina by Anodization of Aluminum Films on Glass Substrates.

    PubMed

    Lebyedyeva, Tetyana; Kryvyi, Serhii; Lytvyn, Petro; Skoryk, Mykola; Shpylovyy, Pavlo

    2016-12-01

    Our research was aimed at the study of aluminum films and porous anodic alumina (PAA) films in thin-film РАА/Al structures for optical sensors, based on metal-clad waveguides (MCWG). The results of the scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies of the structure of Al films, deposited by DC magnetron sputtering, and of PAA films, formed on them, are presented in this work.The study showed that the structure of the Al films is defined by the deposition rate of aluminum and the thickness of the film. We saw that under anodization in 0.3 M aqueous oxalic acid solution at a voltage of 40 V, the PAA film with a disordered array of pores was formed on aluminum films 200-600 nm thick, which were deposited on glass substrates with an ultra-thin adhesive Nb layer. The research revealed the formation of two differently sized types of pores. The first type of pores is formed on the grain boundaries of aluminum film, and the pores are directed perpendicularly to the surface of aluminum. The second type of pores is formed directly on the grains of aluminum. They are directed perpendicularly to the grain plains. There is a clear tendency to self-ordering in this type of pores. PMID:27083584

  16. Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

    NASA Astrophysics Data System (ADS)

    Sowers, A. T.; Christman, J. A.; Bremser, M. D.; Ward, B. L.; Davis, R. F.; Nemanich, R. J.

    1997-10-01

    Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 104 times the collector currents.

  17. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    SciTech Connect

    Wing, Waylin J.; Sadeghi, Seyed M. Gutha, Rithvik R.; Campbell, Quinn; Mao, Chuanbin

    2015-09-28

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  18. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    NASA Astrophysics Data System (ADS)

    Wing, Waylin J.; Sadeghi, Seyed M.; Gutha, Rithvik R.; Campbell, Quinn; Mao, Chuanbin

    2015-09-01

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  19. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM SUBSTRATES. PART I: CHARACTERIZATION OF FILMS AND FILM/SUBSTRATE INTERFACES

    EPA Science Inventory

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 Å in thickness) were deposited onto aluminum substrates (6111-T4 alloy) in radio frequency (RF) and microwave (MW) powered reactors to be used as primers for structural adhesive bonding. Processing variables such as sub...

  20. Tailoring oxidation of aluminum nanoparticles reinforced with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Sharma, Manjula; Sharma, Vimal

    2016-05-01

    In this report, the oxidation temperature and reaction enthalpy of Aluminum (Al) nanoparticles has been controlled by reinforcing with carbon nanotubes. The physical mixing method with ultrasonication was employed to synthesize CNT/Al nanocomposite powders. The micro-morphology of nanoconmposite powders has been analysed by scanning electron microscopy, energy dispersive spectroscopy, raman spectroscopy and X-ray diffraction techniques. The oxidation behavior of nanocomposite powders analyzed by thermogravimetry/differential scanning calorimertry showed improvement in the exothermic enthalpy. Largest exothermic enthalpy of-1251J/g was observed for CNT (4 wt%)/Al nanocomposite.

  1. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

    PubMed

    Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O

    2013-01-18

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa. PMID:23220817

  2. A nine-atom rhodium-aluminum oxide cluster oxidizes five carbon monoxide molecules.

    PubMed

    Li, Xiao-Na; Zhang, Hua-Min; Yuan, Zhen; He, Sheng-Gui

    2016-01-01

    Noble metals can promote the direct participation of lattice oxygen of very stable oxide materials such as aluminum oxide, to oxidize reactant molecules, while the fundamental mechanism of noble metal catalysis is elusive. Here we report that a single atom of rhodium, a powerful noble metal catalyst, can promote the transfer of five oxygen atoms to oxidize carbon monoxide from a nine-atom rhodium-aluminum oxide cluster. This is a sharp improvement in the field of cluster science where the transfer of at most two oxygen atoms from a doped cluster is more commonly observed. Rhodium functions not only as the preferred trapping site to anchor and oxidize carbon monoxide by the oxygen atoms in direct connection with rhodium but also the primarily oxidative centre to accumulate the large amounts of electrons and the polarity of rhodium is ultimately transformed from positive to negative. PMID:27094921

  3. A nine-atom rhodium–aluminum oxide cluster oxidizes five carbon monoxide molecules

    PubMed Central

    Li, Xiao-Na; Zhang, Hua-Min; Yuan, Zhen; He, Sheng-Gui

    2016-01-01

    Noble metals can promote the direct participation of lattice oxygen of very stable oxide materials such as aluminum oxide, to oxidize reactant molecules, while the fundamental mechanism of noble metal catalysis is elusive. Here we report that a single atom of rhodium, a powerful noble metal catalyst, can promote the transfer of five oxygen atoms to oxidize carbon monoxide from a nine-atom rhodium–aluminum oxide cluster. This is a sharp improvement in the field of cluster science where the transfer of at most two oxygen atoms from a doped cluster is more commonly observed. Rhodium functions not only as the preferred trapping site to anchor and oxidize carbon monoxide by the oxygen atoms in direct connection with rhodium but also the primarily oxidative centre to accumulate the large amounts of electrons and the polarity of rhodium is ultimately transformed from positive to negative. PMID:27094921

  4. Prediction of new thermodynamically stable aluminum oxides.

    PubMed

    Liu, Yue; Oganov, Artem R; Wang, Shengnan; Zhu, Qiang; Dong, Xiao; Kresse, Georg

    2015-01-01

    Recently, it has been shown that under pressure, unexpected and counterintuitive chemical compounds become stable. Laser shock experiments (A. Rode, unpublished) on alumina (Al2O3) have shown non-equilibrium decomposition of alumina with the formation of free Al and a mysterious transparent phase. Inspired by these observations, we have explored the possibility of the formation of new chemical compounds in the system Al-O. Using the variable-composition structure prediction algorithm USPEX, in addition to the well-known Al2O3, we have found two extraordinary compounds Al4O7 and AlO2 to be thermodynamically stable in the pressure ranges 330-443 GPa and above 332 GPa, respectively. Both of these compounds at the same time contain oxide O(2-) and peroxide O2(2-) ions, and both are insulating. Peroxo-groups are responsible for gap states, which significantly reduce the electronic band gap of both Al4O7 and AlO2. PMID:25830780

  5. Prediction of new thermodynamically stable aluminum oxides

    PubMed Central

    Liu, Yue; Oganov, Artem R.; Wang, Shengnan; Zhu, Qiang; Dong, Xiao; Kresse, Georg

    2015-01-01

    Recently, it has been shown that under pressure, unexpected and counterintuitive chemical compounds become stable. Laser shock experiments (A. Rode, unpublished) on alumina (Al2O3) have shown non-equilibrium decomposition of alumina with the formation of free Al and a mysterious transparent phase. Inspired by these observations, we have explored the possibility of the formation of new chemical compounds in the system Al-O. Using the variable-composition structure prediction algorithm USPEX, in addition to the well-known Al2O3, we have found two extraordinary compounds Al4O7 and AlO2 to be thermodynamically stable in the pressure ranges 330-443 GPa and above 332 GPa, respectively. Both of these compounds at the same time contain oxide O2− and peroxide O22− ions, and both are insulating. Peroxo-groups are responsible for gap states, which significantly reduce the electronic band gap of both Al4O7 and AlO2. PMID:25830780

  6. Prediction of new thermodynamically stable aluminum oxides

    NASA Astrophysics Data System (ADS)

    Liu, Yue; Oganov, Artem R.; Wang, Shengnan; Zhu, Qiang; Dong, Xiao; Kresse, Georg

    2015-04-01

    Recently, it has been shown that under pressure, unexpected and counterintuitive chemical compounds become stable. Laser shock experiments (A. Rode, unpublished) on alumina (Al2O3) have shown non-equilibrium decomposition of alumina with the formation of free Al and a mysterious transparent phase. Inspired by these observations, we have explored the possibility of the formation of new chemical compounds in the system Al-O. Using the variable-composition structure prediction algorithm USPEX, in addition to the well-known Al2O3, we have found two extraordinary compounds Al4O7 and AlO2 to be thermodynamically stable in the pressure ranges 330-443 GPa and above 332 GPa, respectively. Both of these compounds at the same time contain oxide O2- and peroxide O22- ions, and both are insulating. Peroxo-groups are responsible for gap states, which significantly reduce the electronic band gap of both Al4O7 and AlO2.

  7. Aluminum recycling from reactor walls: A source of contamination in a-Si:H thin films

    SciTech Connect

    Longeaud, C.; Ray, P. P.; Bhaduri, A.; Daineka, D.; Johnson, E. V.; Roca i Cabarrocas, P.

    2010-11-15

    In this article, the authors investigate the contamination of hydrogenated amorphous silicon thin films with aluminum recycled from the walls and electrodes of the deposition reactor. Thin films of hydrogenated amorphous silicon were prepared under various conditions by a standard radio frequency plasma enhanced chemical vapor deposition process in two reactors, the chambers of which were constructed of either aluminum or stainless steel. The authors have studied the electronic properties of these thin films and have found that when using an aluminum reactor chamber, the layers are contaminated with aluminum recycled from the chamber walls and electrode. This phenomenon is observed almost independently of the deposition conditions. The authors show that this contamination results in slightly p-doped films and could be detrimental to the deposition of device grade films. The authors also propose a simple way to control and eventually suppress this contamination.

  8. A preliminary study of ester oxidation on an aluminum surface using chemiluminescence

    NASA Technical Reports Server (NTRS)

    Jones, William R., Jr.; Meador, Michael A.; Morales, Wilfredo

    1987-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin-film micro-oxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing 10 to the minus 3rd power M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission (I sub max) was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period or the time to reach one-half of maximum intensity (t sub 1/2) was an inverse function of test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  9. A preliminary study of ester oxidation on an aluminum surface using chemiluminescence

    NASA Technical Reports Server (NTRS)

    Jones, W. R., Jr.; Meador, M. A.; Morales, W.

    1986-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin-film micro-oxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing 10 to the minus 3 power M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission (I sub max) was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period or the time to reach one-half of maximum intensity (t sub 1/2) was an inverse function of test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  10. Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films

    NASA Astrophysics Data System (ADS)

    Akiyama, Morito; Morofuji, Yukari; Kamohara, Toshihiro; Nishikubo, Keiko; Tsubai, Masayoshi; Fukuda, Osamu; Ueno, Naohiro

    2006-12-01

    We have investigated the high sensitive piezoelectric response of c-axis oriented aluminum nitride (AlN) thin films prepared on polyethylene terephthalate (PET) films. The AlN films were deposited using a radio frequency magnetron sputtering method at temperatures close to room temperature. The c axes of the AlN films were perpendicularly oriented to the PET film surfaces. The sensor consisting of the AlN and PET films is flexible like PET films and the electrical charge is linearly proportional to the stress within a wide range from 0to8.5MPa. The sensor can respond to the frequencies from 0.3 to over 100Hz and measures a clear human pulse wave form by holding the sensor between thumb and middle finger. The resolution of the pulse wave form is comparable to a sphygmomanometer at stress levels of 10kPa. We think that the origin of the high performance of the sensor is the deflection effect, the thin thickness and high elastic modulus of the AlN layer, and the thin thickness and low elastic modulus of the PET film.

  11. Formation of Nanoporous Anodic Alumina by Anodization of Aluminum Films on Glass Substrates

    NASA Astrophysics Data System (ADS)

    Lebyedyeva, Tetyana; Kryvyi, Serhii; Lytvyn, Petro; Skoryk, Mykola; Shpylovyy, Pavlo

    2016-04-01

    Our research was aimed at the study of aluminum films and porous anodic alumina (PAA) films in thin-film PAA/Al structures for optical sensors, based on metal-clad waveguides (MCWG). The results of the scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies of the structure of Al films, deposited by DC magnetron sputtering, and of PAA films, formed on them, are presented in this work.

  12. The role of stress in self-ordered porous anodic oxide formation and corrosion of aluminum

    NASA Astrophysics Data System (ADS)

    Capraz, Omer Ozgur

    The phenomenon of plastic flow induced by electrochemical reactions near room temperature is significant in porous anodic oxide (PAO) films, charging of lithium batteries and stress-corrosion cracking (SCC). As this phenomenon is poorly understood, fundamental insight into flow from our work may provide useful information for these problems. In-situ monitoring of the stress state allows direct correlation between stress and the current or potential, thus providing fundamental insight into technologically important deformation and failure mechanisms induced by electrochemical reactions. A phase-shifting curvature interferometry was designed to investigate the stress generation mechanisms on different systems. Resolution of our curvature interferometry was found to be ten times more powerful than that obtained by state-of-art multiple deflectometry technique and the curvature interferometry helps to resolve the conflicting reports in the literature. During this work, formation of surface patterns during both aqueous corrosion of aluminum and formation of PAO films were investigated. Interestingly, for both cases, stress induced plastic flow controls the formation of surface patterns. Pore formation mechanisms during anodizing of the porous aluminum oxide films was investigated . PAO films are formed by the electrochemical oxidation of metals such as aluminum and titanium in a solution where oxide is moderately soluble. They have been used extensively to design numerous devices for optical, catalytic, and biological and energy related applications, due to their vertically aligned-geometry, high-specific surface area and tunable geometry by adjusting process variables. These structures have developed empirically, in the absence of understanding the process mechanism. Previous experimental studies of anodizing-induced stress have extensively focused on the measurement of average stress, however the measurement of stress evolution during anodizing does not provide

  13. Naringin protects memory impairment and mitochondrial oxidative damage against aluminum-induced neurotoxicity in rats.

    PubMed

    Prakash, Atish; Shur, Bhargabi; Kumar, Anil

    2013-09-01

    Aluminum has been indicated in neurodegenerative disorders and naringin, a bioflavonoid has been used to reduce neurotoxic effects of aluminum against aluminum chloride-induced rats. Therefore, present study has been designed to explore the possible role of naringin against aluminum-induced cognitive dysfunction and oxidative damage in rats. Aluminum (100 mg/kg) and naringin (40 and 80 mg/kg) drug treatment were administered orally for six weeks to male wistar rats. Various behavioral performance tasks, biochemical, mitochondrial oxidative parameters, and aluminum concentration in the brain were assessed. Aluminum chloride treatment significantly caused cognitive dysfunction and mitochondria oxidative damage as compared to vehicle treated control group. Besides, aluminum chloride treatment significantly increased acetyl cholinesterase activity and aluminum concentration in the brain as compared to sham. Chronic administration of naringin significantly improved cognitive performance and attenuated mitochondria oxidative damage, acetyl cholinesterase activity, and aluminum concentration in aluminum-treated rats as compared to control rats. Results of the study demonstrate neuroprotective potential of naringin against aluminum chloride-induced cognitive dysfunction and mitochondrial oxidative damage. PMID:23510099

  14. Screen Cage Ion Plating (SCIP) and scratch testing of polycrystalline aluminum oxide

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis; Sliney, Harold E.; Deadmore, Daniel L.

    1992-01-01

    A screen cage ion plating (SCIP) technique was developed to apply silver films on electrically nonconducting aluminum oxide. It is shown that SCIP has remarkable throwing power; surfaces to be coated need not be in direct line of sight with the evaporation source. Scratch tests, employing a diamond stylus with a 200 micro m radius tip, were performed on uncoated and on silver coated alumina. Subsequent surface analysis show that a significant amount of silver remains on the scratched surfaces, even in areas where high stylus load produced severe crack patterns in the ceramic. Friction coefficients were lowered during the scratch tests on the coated alumina indicating that this modification of the ion planting process should be useful for applying lubricating films of soft metals to electrical insulating materials. The very good throwing power of SCIP also strongly suggests general applicability of this process in other areas of technology, e.g., electronics, in addition to tribology.

  15. The effects of aluminum oxide on inertial welding of aluminum in space applications

    NASA Astrophysics Data System (ADS)

    Smith, Michael H.

    1992-05-01

    Inertial friction welding of 2219 aluminum alloy studs to 2219 aluminum alloy plates is investigated in air and in an argon atmosphere to determine the effects of an intact oxide layer on weld quality. Scratch-brushing of plates and studs was performed in an argon atmosphere to break up the oxide layer and prevent reformation prior to testing. Argon was used to simulate the near-oxygen free space environment. Weld quality was determined by a bend test and by measurement of the fraction of the weld surface area that was dimpled in appearance following fracture of the weld. The fundamental theories of friction and wear that are applicable to friction welding are reviewed. A brief survey of current welding methods that may have application in space is presented, as well as a discussion of their feasibility and limitations. Characteristics of the space station are discussed as well as their consequences on welding in space. A qualitative model of the process of inertial friction welding based on the theories of friction and observations of welds and weld fractures is developed and presented.

  16. Aircraft water vapor measurements utilizing an aluminum oxide hygrometer

    NASA Technical Reports Server (NTRS)

    Hilsenrath, E.

    1973-01-01

    A hygrometer for water vapor measurements from an aircraft has been developed. An aluminum oxide hygrometer mounted in an aircraft Rosemount air temperature scoop was flown on NASA and USAF aircraft. Water vapor measurements were conducted up to 40,000 feet with penetration into the stratosphere. Good agreement was obtained with simultaneously flown remote sounders of water vapor. During transcontinental flights the hygrometer demonstrated adequate response to measure the natural variability of water vapor near the tropopause. Rapid response was demonstrated in pursuit of the jet wake of an F-104 at 35,000 feet.

  17. Aircraft water vapor measurements utilizing an aluminum oxide hygrometer

    NASA Technical Reports Server (NTRS)

    Hilsenrath, E.

    1974-01-01

    A hygrometer for water vapor measurements from an aircraft was developed. An aluminum oxide hygrometer mounted in an aircraft Rosemount air temperature scoop was flown on the NASA Convair 990 and on a USAF B-57 aircraft. Water vapor measurements from the Convair 990 were conducted up to 40,000 ft with penetration into the stratosphere. Good agreement was obtained with simultaneously flown remote sounders of water vapor. During transcontinental flights the hygrometer demonstrated adequate response to measure the natural variability of water vapor near the tropopause. Rapid response was demonstrated in pursuit of the jet wake of an F-104 at 35,000 ft.

  18. Chemical dynamics of nano-aluminum/iodine (V) oxide

    NASA Astrophysics Data System (ADS)

    Little, B. K.; Welle, E. J.; Emery, S. B.; Bogle, M. B.; Ashley, V. L.; Schrand, A. M.; Lindsay, C. M.

    2014-05-01

    This proceeding describes our preliminary efforts in studying highly reactive composites containing crystalline iodine (V) oxide and nano-aluminum (nAl) with various amounts of cyclohexanone in the form of powders. In this study we report upon the application of physiochemical techniques such as thermal gravimetric analysis (TGA), differential scanning calorimetry (DSC), powdered X-ray diffraction (PXRD), and electron microscopy for chemical characterization of powder composites. In addition dynamic measurements were conducted by recording pressure trace profiles during a combustion event. These various techniques were employed to examine these energetic materials (EMs) and associate changes to the chemical dynamics of the composite with the additive.

  19. Local epitaxial growth of aluminum nitride and molybdenum thin films in fiber texture using aluminum nitride interlayer

    SciTech Connect

    Kamohara, Toshihiro; Akiyama, Morito; Ueno, Naohiro; Nonaka, Kazuhiro; Kuwano, Noriyuki

    2006-08-14

    The authors have found the local epitaxial growth of aluminum nitride (AlN) and molybdenum (Mo) films in fiber texture, although the interface between the AlN and Mo films has different crystal symmetries. The local heteroepitaxial relationship is (0001)AlN[2110](parallel sign)(110)Mo[111](parallel sign)(0001)AlN[2110]. The AlN films changes from nonequiaxed microstructures to equiaxed columnar structures. The authors think that the AlN interlayer is effective in decreasing the crystallization energy of the Mo electrode due to the coherent heteroepitaxial nucleation. It is interesting that the local heteroepitaxial relationship does not satisfy the criteria for heteroepitaxial growth.

  20. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  1. Aluminum oxide coating for post-growth photo emission wavelength tuning of indium phosphide nanowire networks

    NASA Astrophysics Data System (ADS)

    Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan; Kobayashi, Nobuhiko P.

    2013-09-01

    Semiconductor-oxide nanostructure devices can be a very intriguing material platform if optoelectronic properties of the original semiconductor nanostructures can be tuned by explicitly controlling properties of the oxide coating. This paper describes our finding that optical properties of semiconductor nanowires can be tuned by depositing a thin layer of metal oxide. In this experiment, indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst. The nanowires formed three-dimensional nanowire networks from which collective optical properties were obtained. The nanowire network was coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. We observed continuous blue shift in photoluminescence spectra when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from an intrinsic negative fixed charge from the oxide surface. Samples were further characterized by scanning electron microscopy, transmission electron microscopy, and selective area diffractometry in an attempt to explain the physical mechanisms for the blue shift.

  2. An Analysis of Mechanical Properties of Anodized Aluminum Film at High Stress

    NASA Astrophysics Data System (ADS)

    Zhao, Xixi; Wei, Guoying; Yu, Yundan; Guo, Yuemei; Zhang, Ao

    2015-10-01

    In this paper, a new environmental-friendly electrolyte containing sulfuric acid and tartaric acid has been used as the substitute of chromic acid for anodization. The work discussed the influence of anodizing voltages on the fatigue life of anodized Al 2024-T3 by performing fatigue tests with 0.1 stress ratio (R) at 320 MPa. Meanwhile the fatigue cycles to failure, yield strength, tensile strength and fracture surface of anodic films at different conditions were investigated. The results showed that the fatigue life of anodized and sealed specimens reduced a lot compared to aluminum alloy, which can be attributed to the crack sites initiated at the oxide layer. The fracture surface analyses also revealed that the number of crack initiation sites enlarged with the increase of anodizing voltage.

  3. Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

    SciTech Connect

    Puurunen, Riikka L.; Vandervorst, Wilfried; Besling, Wim F. A.; Richard, Olivier; Bender, Hugo; Conard, Thierry; Zhao Chao; Delabie, Annelies; Caymax, Matty; Gendt, Stefan de; Heyns, Marc; Viitanen, Minna M.; Ridder, Marco de; Brongersma, Hidde H.; Tamminga, Yde; Dao, Thuy; Win, Toon de; Verheijen, Marcel; Kaiser, Monja; Tuominen, Marko

    2004-11-01

    Atomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. For such thicknesses, the growth mode, defining how the material is arranged on the surface during the growth, is of critical importance. In this work, the growth mode of the zirconium tetrachloride/water and the trimethyl aluminum/water ALD process on hydrogen-terminated silicon was investigated by combining information on the total amount of material deposited with information on the surface fraction of the material. The total amount of material deposited was measured by Rutherford backscattering, x-ray fluorescence, and inductively coupled plasma-optical emission spectroscopy, and the surface fractions by low-energy ion scattering. Growth mode modeling was made assuming two-dimensional growth or random deposition (RD), with a 'shower model' of RD recently developed for ALD. Experimental surface fractions of the ALD-grown zirconium oxide and aluminum oxide films were lower than the surface fractions calculated assuming RD, suggesting the occurrence of island growth. Island growth was confirmed with transmission electron microscopy (TEM) measurements, from which the island size and number of islands per unit surface area could also be estimated. The conclusion of island growth for the aluminum oxide deposition on hydrogen-terminated silicon contradicts earlier observations. In this work, physical aluminum oxide islands were observed in TEM after 15 ALD reaction cycles. Earlier, thicker aluminum oxide layers have been analyzed, where islands have not been observed because they have already coalesced to form a continuous film. The unreactivity of hydrogen-terminated silicon surface towards the ALD reactants, except for reactive defect areas, is proposed as the origin of island growth. Consequently, island growth can be regarded as 'undesired surface-selective ALD'.

  4. Interfacial charging phenomena of aluminum (hydr)oxides

    SciTech Connect

    Hiemstra, T.; Yong, H.; Van Riemsdijk, W.H.

    1999-08-31

    The interfacial charging of Al(OH){sub 3} (gibbsite and bayerite) and Al{sub 2}O{sub 3} has been studied. For Al(OH){sub 3} it can be shown that the very strong variation in charging behavior for different preparations is related to the relative presence of differently reacting crystal planes. The edge faces of the hexagonal gibbsite crystals are proton reactive over the whole pH range, in contrast to the 001 plane, which is mainly uncharged below pH = 10. On this 001 face only doubly coordinated surface groups are found, in contrast to the edges which also have singly coordinated surface groups. The results are fully in agreement with the predictions of the Multi site complexation (MUSIC) model. The proton adsorption, electrolyte ion adsorption, and shift of the IEP of gibbsite and aluminum oxide have been modeled simultaneously. For gibbsite, the ion pair formation of Na is larger than that of Cl, as is evidenced by modeling the experimentally observed upward shift on the IEP and charge reversal at high electrolyte concentrations. All these experimental results can be satisfactorily modeled with the MUSIC model, including the experimental surface potential of aluminum oxide (ISFET).

  5. Corrosion evaluation of zirconium doped oxide coatings on aluminum formed by plasma electrolytic oxidation.

    PubMed

    Bajat, Jelena; Mišković-Stanković, Vesna; Vasilić, Rastko; Stojadinović, Stevan

    2014-01-01

    The plasma electrolytic oxidation (PEO) of aluminum in sodium tungstate (Na(2)WO(4) · (2)H(2)O) and Na(2)WO(4) · (2)H(2)O doped with Zr was analyzed in order to obtain oxide coatings with improved corrosion resistance. The influence of current density in PEO process and anodization time was investigated, as well as the influence of Zr, with the aim to find out how they affect the chemical content, morphology, surface roughness, and corrosion stability of oxide coatings. It was shown that the presence of Zr increases the corrosion stability of oxide coatings for all investigated PEO times. Evolution of EIS spectra during the exposure to 3% NaCl, as a strong corrosive agent, indicated the highest corrosion stability for PEO coating formed on aluminum at 70 mA/cm(2) for 2 min in a zirconium containing electrolyte. PMID:25125114

  6. Nanostructured lithium-aluminum alloy electrodes for lithium-ion batteries.

    SciTech Connect

    Hudak, Nicholas S.; Huber, Dale L.

    2010-12-01

    Electrodeposited aluminum films and template-synthesized aluminum nanorods are examined as negative electrodes for lithium-ion batteries. The lithium-aluminum alloying reaction is observed electrochemically with cyclic voltammetry and galvanostatic cycling in lithium half-cells. The electrodeposition reaction is shown to have high faradaic efficiency, and electrodeposited aluminum films reach theoretical capacity for the formation of LiAl (1 Ah/g). The performance of electrodeposited aluminum films is dependent on film thickness, with thicker films exhibiting better cycling behavior. The same trend is shown for electron-beam deposited aluminum films, suggesting that aluminum film thickness is the major determinant in electrochemical performance regardless of deposition technique. Synthesis of aluminum nanorod arrays on stainless steel substrates is demonstrated using electrodeposition into anodic aluminum oxide templates followed by template dissolution. Unlike nanostructures of other lithium-alloying materials, the electrochemical performance of these aluminum nanorod arrays is worse than that of bulk aluminum.

  7. Friction reducing behavior of stearic acid film on a textured aluminum substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Quan; Wan, Yong; Li, Yang; Yang, Shuyan; Yao, Wenqing

    2013-09-01

    A simple two-step process was developed to render the aluminum hydrophobicity with lower friction. The textured aluminum substrate was firstly fabricated by immersed in a sodium hydroxide solution at 100 °C for 1 h. Stearic acid film was then deposited to acquire high hydrophobicity. Scanning electron microscopy, IR spectroscopy and water contact angle measurements were used to analyze the morphological features, chemical structure and hydrophobicity of prepared samples, respectively. Moreover, the friction reducing behavior of the organic-inorganic composite film on aluminum sliding against steel was evaluated in a ball-on-plate configuration. It was found that the stearic acid film on the textured aluminum led to decreased friction with significantly extended life.

  8. Effects of substrate temperatures and deposition rates on properties of aluminum fluoride thin films in deep-ultraviolet region.

    PubMed

    Sun, Jian; Li, Xu; Zhang, Weili; Yi, Kui; Shao, Jianda

    2012-12-10

    Aluminum fluoride (AlF(3)) is a low-refractive-index material widely used in coatings for deep-ultraviolet (DUV) optical systems, especially 193 nm laser systems. Low optical loss and stability are essential for film application. In this study, AlF(3)> thin films were prepared by thermal evaporation with a resistive heating boat. The effects of substrate temperatures and deposition rates on the optical properties in vacuum and in air, composition, and microstructures were discussed respectively. In vacuum the deposition parameters directly influenced the microstructures that determined the refractive index. When the films were exposed to air, aluminum oxide (Al(2)O(3)) formed in the films with water adsorption. Thus the refractive index increased and a nonmonotonic changing trend of the refractive index with substrate temperature was observed. The Al(2)O(3) was also found to be conductive to reducing absorption loss. AlF(3) films prepared at a high substrate temperature and deposition rate could yield stable structures with large optical loss. PMID:23262545

  9. Aluminum powder metallurgy processing

    NASA Astrophysics Data System (ADS)

    Flumerfelt, Joel Fredrick

    In recent years, the aluminum powder industry has expanded into non-aerospace applications. However, the alumina and aluminum hydroxide in the surface oxide film on aluminum powder require high cost powder processing routes. A driving force for this research is to broaden the knowledge base about aluminum powder metallurgy to provide ideas for fabricating low cost aluminum powder components. The objective of this dissertation is to explore the hypothesis that there is a strong linkage between gas atomization processing conditions, as-atomized aluminum powder characteristics, and the consolidation methodology required to make components from aluminum powder. The hypothesis was tested with pure aluminum powders produced by commercial air atomization commercial inert gas atomization and gas atomization reaction synthesis (GARS). The commercial atomization methods are bench marks of current aluminum powder technology. The GARS process is a laboratory scale inert gas atomization facility. A benefit of using pure aluminum powders is an unambiguous interpretation of the results without considering the effects of alloy elements. A comparison of the GARS aluminum powders with the commercial aluminum powders showed the former to exhibit superior powder characteristics. The powders were compared in terms of size and shape, bulk chemistry, surface oxide chemistry and structure, and oxide film thickness. Minimum explosive concentration measurements assessed the dependence of explosibility hazard on surface area, oxide film thickness, and gas atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization oxidation of aluminum powder. An Al-Ti-Y GARS alloy exposed in ambient air at different temperatures revealed the effect of reactive alloy elements on post-atomization powder oxidation. The pure aluminum powders were consolidated by two different routes, a

  10. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    SciTech Connect

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U.; Nicolay, P.

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.