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Sample records for aluminum oxide film

  1. Plasma deposition of aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Catherine, Y.; Talebian, A.

    1988-03-01

    A plasma deposition technique for amorphous aluminum oxide films is discussed. A 450 kHz or 13.56 MHz power supply was used to generate the plasma and the deposition of the film was achieved at low plasma power using trimethyl-aluminum and carbon dioxide reactant sources. It has been found that for the low frequency plasma the growth is strongly dependent upon TMA concentration, indicating that the growth process is mass transport limited. On the other hand using the 13.56 MHz discharge results in a surface controlled growth rate. An increase in the deposition temperature up to 300° C makes the films more dense and lowers their etching rate. FTIR and ESCA measurements showed that oxidation is only completed with high CO2 concentrations and a deposition temperature above 250° C. The dielectric films were found to have a dielectric constant in the range 7.3=2-9 and a refractive index between 1.5 1.8 depending upon deposition conditions.

  2. Aluminum oxide film thickness and emittance

    SciTech Connect

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55{degrees}C) moderator for about a year. The average moderator temperature was assumed to be 30{degrees}C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 {mu}m {plus minus} 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 {mu}m {plus minus} 11%. Total hemispherical emittance is predicted to be 0.69 at 96{degrees}C, decreasing to 0.45 at 600{degrees}C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values.

  3. Aluminum oxide film thickness and emittance

    SciTech Connect

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55{degrees}C) moderator for about a year. The average moderator temperature was assumed to be 30{degrees}C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 {mu}m {plus_minus} 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 {mu}m {plus_minus} 11%. Total hemispherical emittance is predicted to be 0.69 at 96{degrees}C, decreasing to 0.45 at 600{degrees}C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values.

  4. Depression of melting point for protective aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Dreizin, E. L.; Allen, D. J.; Glumac, N. G.

    2015-01-01

    The protective aluminum oxide film naturally formed on a surface of aluminum has a thickness in the range of 3-5 nm. Its melting causes loss of its continuity, which may significantly affect the ignition and combustion processes and their relative time scales. Melting of the alumina film also plays an important role when aluminum powders are used to prepare composites and/or being sintered. This letter quantifies depression of the melting point of an alumina film based on its nano-meter thickness. A theoretical estimate is supported by experiments relying on a detected change in the optical properties of naturally oxidized aluminum particles heated in an inert environment.

  5. Electrochemical formation of a composite polymer-aluminum oxide film

    NASA Astrophysics Data System (ADS)

    Runge-Marchese, Jude Mary

    1997-10-01

    The formation of polymer films through electrochemical techniques utilizing electrolytes which include conductive polymer is of great interest to the coatings and electronics industries as a means for creating electrically conductive and corrosion resistant finishes. One of these polymers, polyamino-benzene (polyaniline), has been studied for this purpose for over ten years. This material undergoes an insulator-to-metal transition upon doping with protonic acids in an acid/base type reaction. Review of prior studies dealing with polyaniline and working knowledge of aluminum anodization has led to the development of a unique process whereby composite polymer-aluminum oxide films are formed. The basis for the process is a modification of the anodizing electrolyte which results in the codeposition of polyaniline during aluminum anodization. A second process, which incorporates electrochemical sealing of the anodic layer with polyaniline was also developed. The formation of these composite films is documented through experimental processing, and characterized by way of scientific analysis and engineering tests. Analysis results revealed the formation of unique dual phase anodic films with fine microstructures which exhibited full intrusion of the columnar aluminum oxide structure with polyaniline, indicating the polymer was deposited as the metal oxidation proceeded. An aromatic amine derivative of polyaniline with aluminum sulfate was determined to be the reaction product within the aluminum oxide phase of the codeposited films. Scientific characterization determined the codeposition process yields completely chemically and metallurgically bound composite films. Engineering studies determined the films, obtained through a single step, exhibited superior wear and corrosion resistance to conventionally anodized and sealed films processed through two steps, demonstrating the increased manufacturing process efficiency that can be realized with the modification of the

  6. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    NASA Astrophysics Data System (ADS)

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-02-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

  7. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes.

    PubMed

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-01-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials. PMID:26831759

  8. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    PubMed Central

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-01-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials. PMID:26831759

  9. Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

    PubMed

    Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

    2016-05-01

    Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures. PMID:27070754

  10. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    NASA Astrophysics Data System (ADS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  11. Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide

    SciTech Connect

    Schmidt, Benjamin W.; Sweet, William J. III; Rogers, Bridget R.; Bierschenk, Eric J.; Gren, Cameron K.; Hanusa, Timothy P.

    2010-03-15

    Metal-organic chemical vapor deposited aluminum oxide films were produced via pyrolysis of dimethylaluminum isopropoxide in a high vacuum reaction chamber in the 417-659 deg. C temperature range. Deposited films contained aluminum, oxygen, and carbon, and the carbon-to-aluminum ratio increased with increased deposition temperature. Aluminum-carbon bonding was observed in films deposited at 659 deg. C by x-ray photoelectron spectroscopy, but not in films deposited at 417 deg. C. The apparent activation energy in the surface reaction controlled regime was 91 kJ/mol. The O/Al and C/Al ratios in the deposited films were greater and less than, respectively, the ratios predicted by the stoichiometry of the precursor. Flux analysis of the deposition process suggested that the observed film stoichiometries could be explained by the participation of oxygen-containing background gases present in the reactor at its base pressure.

  12. A method to study the history of a double oxide film defect in liquid aluminum alloys

    NASA Astrophysics Data System (ADS)

    Raiszadeh, R.; Griffiths, W. D.

    2006-12-01

    Entrained double oxide films have been held responsible for reductions in mechanical properties in aluminum casting alloys. However, their behavior in the liquid metal, once formed, has not been studied directly. It has been proposed that the atmosphere entrapped in the double oxide film defect will continue to react with the liquid metal surrounding it, perhaps leading to its elimination as a significant defect. A silicon-nitride rod with a hole in one end was plunged into liquid aluminum to hold a known volume of air in contact with the liquid metal at a constant temperature. The change in the air volume with time was recorded by real-time X-ray radiography to determine the reaction rates of the trapped atmosphere with the liquid aluminum, creating a model for the behavior of an entrained double oxide film defect. The results from this experiment showed that first oxygen, and then nitrogen, was consumed by the aluminum alloy, to form aluminum oxide and aluminum nitride, respectively. The effect of adding different elements to the liquid aluminum and the effect of different hydrogen contents were also studied.

  13. Surface enhanced Raman scattering of biospecies on anodized aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Zhang, C.; Smirnov, A. I.; Hahn, D.; Grebel, H.

    2007-06-01

    Traditionally, aluminum and anodized aluminum oxide films (AAO) are not the platforms of choice for surface-enhanced raman scattering (SERS) experiments despite of the aluminum's large negative permittivity value. Here we examine the usefulness of aluminum and nanoporous alumina platforms for detecting soft biospecies ranging from bacterial spores to protein markers. We used these flat platforms to examine SERS of a model protein (cytochrome c from bovine heart tissue) and bacterial cells (spores of Bacillus subtilis ATCC13933 used as Anthrax simulant) and demonstrated clear Raman amplification.

  14. Synthesis of nanoporous activated iridium oxide films by anodized aluminum oxide templated atomic layer deposition.

    SciTech Connect

    Comstock, D. J.; Christensen, S. T.; Elam, J. W.; Pellin, M. J.; Hersam, M. C.

    2010-08-01

    Iridium oxide (IrOx) has been widely studied due to its applications in electrochromic devices, pH sensing, and neural stimulation. Previous work has demonstrated that both Ir and IrOx films with porous morphologies prepared by sputtering exhibit significantly enhanced charge storage capacities. However, sputtering provides only limited control over film porosity. In this work, we demonstrate an alternative scheme for synthesizing nanoporous Ir and activated IrOx films (AIROFs). This scheme utilizes atomic layer deposition to deposit a thin conformal Ir film within a nanoporous anodized aluminum oxide template. The Ir film is then activated by potential cycling in 0.1 M H{sub 2}SO{sub 4} to form a nanoporous AIROF. The morphologies and electrochemical properties of the films are characterized by scanning electron microscopy and cyclic voltammetry, respectively. The resulting nanoporous AIROFs exhibit a nanoporous morphology and enhanced cathodal charge storage capacities as large as 311 mC/cm{sup 2}.

  15. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  16. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance gm change, threshold voltage VT change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  17. Synthesis of iridescent Ni-containing anodic aluminum oxide films by anodization in oxalic acid

    NASA Astrophysics Data System (ADS)

    Xu, Qin; Ma, Hong-Mei; Zhang, Yan-Jun; Li, Ru-Song; Sun, Hui-Yuan

    2016-02-01

    Ni-containing anodic aluminum oxide films with highly saturated colors were synthesized using an ac electrodeposition method, and the optical and magnetic characteristics of the films were characterized. Precisely controllable color tuning could be obtained using wet-chemical etching to thin and widen the anodic aluminum oxide films pores isotropically before Ni deposition. Magnetic measurements indicate that such colored composite films not exhibit obvious easy magnetization direction. The resulted short (200 nm in length) and wide (50 nm in diameter) Ni nanowires present only fcc phase. The magnetization reversal mechanism is in good agreement with the symmetric fanning reversal mode which is discussed in detail. Such films may find applications in decoration, display and multifunctional anti-counterfeiting applications.

  18. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films.

    PubMed

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision. PMID:25273741

  19. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

    NASA Astrophysics Data System (ADS)

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

  20. Electromechanical Breakdown of Barrier-Type Anodized Aluminum Oxide Thin Films Under High Electric Field Conditions

    NASA Astrophysics Data System (ADS)

    Chen, Jianwen; Yao, Manwen; Yao, Xi

    2016-02-01

    Barrier-type anodized aluminum oxide (AAO) thin films were formed on a polished aluminum substrate via electrochemical anodization in 0.1 mol/L aqueous solution of ammonium pentaborate. Electromechanical breakdown occurred under high electric field conditions as a result of the accumulation of mechanical stress in the film-substrate system by subjecting it to rapid thermal treatment. Before the breakdown event, the electricity of the films was transported in a highly nonlinear way. Immediately after the breakdown event, dramatic cracking of the films occurred, and the cracks expanded quickly to form a mesh-like dendrite network. The breakdown strength was significantly reduced because of the electromechanical coupling effect, and was only 34% of the self-healing breakdown strength of the AAO film.

  1. Luminescence of europium-doped anode oxide films on titanium-aluminum composites

    NASA Astrophysics Data System (ADS)

    Sokol, V. A.; Pinaeva, M. M.; Gurskaya, E. A.; Stekol'Nikov, A. A.

    2000-03-01

    The luminescence of europium in anode oxide films (AOF) on titanium-aluminum film composites is investigated. It is shown that the intensity distribution in the continuous and line luminescence spectra of europium introduced into the AOF directly in the process of anodic oxidation essentially depends on the sequence of arrangement of the layers of metal films and on the temperature of their heat treatment preceding the process of anodic oxidation. It is established that the nature of the luminescence spectrum of the AOF correlates with the chronovoltammetry diagrams of anodic oxidation. Composites with a high degree of europium doping are found and methods of searching for composites for creating new materials of electronic technology are outlined.

  2. Modelling the growth process of porous aluminum oxide film during anodization

    NASA Astrophysics Data System (ADS)

    Aryslanova, E. M.; Alfimov, A. V.; Chivilikhin, S. A.

    2015-11-01

    Currently it has become important for the development of metamaterials and nanotechnology to obtain regular self-assembled structures. One such structure is porous anodic alumina film that consists of hexagonally packed cylindrical pores. In this work we consider the anodization process, our model takes into account the influence of layers of aluminum and electrolyte on the rate of growth of aluminum oxide, as well as the effect of surface diffusion. In present work we consider those effects. And as a result of our model we obtain the minimum distance between centers of alumina pores in the beginning of anodizing process.

  3. XANES studies of chromate replacements in oxide films on aluminum

    SciTech Connect

    Davenport, A.J.; Aldykiewicz, A.J. Jr.; Isaacs, H.S.; Kendig, M.W.; Mundy, A.M.

    1991-12-31

    The chemistry of conversion coatings on aluminum containing chromate and non-toxic chromate replacements has been investigated using XANES. Chromate conversion coatings contain 20% 6-valent chromium which is gradually lost on immersion in a corrosive environment. The most promising alternative coatings are those based on phosphotungstate. The chemistry of these and coatings containing Mo, V, and Mn are discussed.

  4. XANES studies of chromate replacements in oxide films on aluminum

    SciTech Connect

    Davenport, A.J.; Aldykiewicz, A.J. Jr.; Isaacs, H.S. ); Kendig, M.W. . Science Center); Mundy, A.M. )

    1991-01-01

    The chemistry of conversion coatings on aluminum containing chromate and non-toxic chromate replacements has been investigated using XANES. Chromate conversion coatings contain 20% 6-valent chromium which is gradually lost on immersion in a corrosive environment. The most promising alternative coatings are those based on phosphotungstate. The chemistry of these and coatings containing Mo, V, and Mn are discussed.

  5. Welding Phenomenon and Removal Mechanism of Aluminum-Oxide Films by Space GHTA Welding Process in Vacuum

    NASA Astrophysics Data System (ADS)

    Suita, Yoshikazu; Ekuni, Tomohide; Kamei, Misa; Tsukuda, Yoshiyuki; Terajima, Noboru; Yamashita, Masahiro; Imagawa, Kichiro; Masubuchi, Koichi

    Aluminum alloys have been widely used in constructing various space structures including the ISS (International Space Station) and launch vehicles. In order to apply the welding technology in space, welding experiments on aluminum alloy were performed using by the GHTA (Gas Hollow Tungsten Arc) welding processes using an inverter controlled DC/AC GTA welding machine in vacuum. We observed the removal mechanism of aluminum-oxide films on molten metal in detail during the welding using a high-speed video camera. As a result, it is clarified that the impact arc pressure produced by pulsed current mechanically crushes and removes aluminum-oxide films on the molten pool. This removal mechanism of aluminum-oxide films is completely different from a removal mechanism by cleaning action.

  6. Studies of aluminum oxide thin films deposited by laser ablation technique

    NASA Astrophysics Data System (ADS)

    Płóciennik, P.; Guichaoua, D.; Korcala, A.; Zawadzka, A.

    2016-06-01

    This paper presents the structural and optical investigations of the aluminum oxide nanocrystalline thin films. Investigated films were fabricated by laser ablation technique in high vacuum onto quartz substrates. The films were deposited at two different temperatures of the substrates equal to room temperature and 900 K. X-ray Diffraction spectra proved nanocrystalline character and the corundum phase of the film regardless on the substrate temperature during the deposition process. Values of the refractive indices, extinction and absorption coefficients were calculated by using Transmission and Reflection Spectroscopy in the UV-VIS-NIR range of the wavelength. Coupling Prism Method was used for films thickness estimations. Experimental measurements and theoretical calculations of the Third Harmonic Generation were also reported. Obtained results show that the lattice strain may affect obtained values of the third order nonlinear optical susceptibility.

  7. Photoluminescence emission of nanoporous anodic aluminum oxide films prepared in phosphoric acid

    PubMed Central

    2012-01-01

    The photoluminescence emission of nanoporous anodic aluminum oxide films formed in phosphoric acid is studied in order to explore their defect-based subband electronic structure. Different excitation wavelengths are used to identify most of the details of the subband states. The films are produced under different anodizing conditions to optimize their emission in the visible range. Scanning electron microscopy investigations confirm pore formation in the produced layers. Gaussian analysis of the emission data indicates that subband states change with anodizing parameters, and various point defects can be formed both in the bulk and on the surface of these nanoporous layers during anodizing. PMID:23272786

  8. Photoluminescence emission of nanoporous anodic aluminum oxide films prepared in phosphoric acid.

    PubMed

    Nourmohammadi, Abolghasem; Asadabadi, Saeid Jalali; Yousefi, Mohammad Hasan; Ghasemzadeh, Majid

    2012-01-01

    The photoluminescence emission of nanoporous anodic aluminum oxide films formed in phosphoric acid is studied in order to explore their defect-based subband electronic structure. Different excitation wavelengths are used to identify most of the details of the subband states. The films are produced under different anodizing conditions to optimize their emission in the visible range. Scanning electron microscopy investigations confirm pore formation in the produced layers. Gaussian analysis of the emission data indicates that subband states change with anodizing parameters, and various point defects can be formed both in the bulk and on the surface of these nanoporous layers during anodizing. PMID:23272786

  9. Photoluminescence emission of nanoporous anodic aluminum oxide films prepared in phosphoric acid

    NASA Astrophysics Data System (ADS)

    Nourmohammadi, Abolghasem; Asadabadi, Saeid Jalali; Yousefi, Mohammad Hasan; Ghasemzadeh, Majid

    2012-12-01

    The photoluminescence emission of nanoporous anodic aluminum oxide films formed in phosphoric acid is studied in order to explore their defect-based subband electronic structure. Different excitation wavelengths are used to identify most of the details of the subband states. The films are produced under different anodizing conditions to optimize their emission in the visible range. Scanning electron microscopy investigations confirm pore formation in the produced layers. Gaussian analysis of the emission data indicates that subband states change with anodizing parameters, and various point defects can be formed both in the bulk and on the surface of these nanoporous layers during anodizing.

  10. Rayleigh instability in polymer thin films coated in the nanopores of anodic aluminum oxide templates.

    PubMed

    Tsai, Chia-Chan; Chen, Jiun-Tai

    2014-01-14

    We study the Rayleigh instability of polystyrene (PS) thin films coated in the nanopores of anodic aluminum oxide (AAO) templates. After thermal annealing, the surface of the PS thin films undulates and the nanostructures transform from nanotubes to Rayleigh-instability-induced nanostructures (short nanorods with encapsulated air bubbles). With longer annealing times, the nanostructures further transform to nanorods with longer lengths. PS samples with two different molecular weights (24 and 100 kg/mol) are used, and their instability transformation processes are compared. The morphology diagrams of the nanostructures at different stages are also constructed to elucidate the mechanism of the morphology transformation. PMID:24380368

  11. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  12. Characterization of Monolayer Formation on Aluminum-Doped Zinc Oxide Thin Films

    SciTech Connect

    Rhodes,C.; Lappi, S.; Fischer, D.; Sambasivan, S.; Genzer, J.; Franzen, S.

    2008-01-01

    The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate are investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent plasma frequency in the mid-IR for p-polarized radiation, suggestive of the detection of a Drude plasma frequency. These studies are complemented by oxygen depletion density functional theory studies for the calculation of the charge carrier concentration and plasma frequency for bulk AZO. In addition, we report on the optical and physical properties of thin film adlayers of n-hexadecanethiol (HDT) and n-octadecanethiol (ODT) self-assembled monolayers (SAMs) on AZO surfaces using reflectance FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Our characterization of the SAM deposition onto the AZO thin film reveals a range of possible applications for this conducting metal oxide.

  13. Advantages of Oxide Films as Bases for Aluminum Pigmented Surface Coatings for Aluminum Alloys

    NASA Technical Reports Server (NTRS)

    Buzzard, R W; Mutchler, W H

    1931-01-01

    Both laboratory and weather-exposure corrosion tests showed conclusively that the protection afforded by aluminum pigmented spar varnish coatings applied to previously anodized aluminum surfaces was greatly superior to that afforded by the same coatings applied to surfaces which had simply been cleaned free from grease and not anodized.

  14. Adhesion of Poly(phenylene sulfide) Resin with Polymeric Film of Triazine Thiol on Aluminum Surface Modified by Anodic Oxidation.

    PubMed

    Chung, Eun Hyuk; Jang, Eun Kyung; Hong, Tae Eun; Kim, Jong Pil; Kim, Hyun Gyu; Jin, Jong Sung; Hyun, Myung Ho; Shin, Dong Su; Bae, Jong-Seong; Jeong, Euh Duck

    2015-01-01

    Various surface modifications have been applied to improve the adhesion properties of aluminum for the cap plate and sealing quality of electrolyte on Li ion batteries. In this study, we have tried to find the effective condition for the polymerization of triazine thiols (TT) on modified aluminum surfaces by anodic aluminum oxide. Characterization of polymerized films on aluminum was explored by scanning electron microscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectroscopy analysis. Scanning electron microscopy results reveal that meaningful roughness was formed on aluminum surfaces by anodic oxidation. Secondary ion mass spectroscopy analysis results represent that the peel strength was found to depend on film thickness and the composition of the adhesion layer. As a result, Al/PPS (polyphenylene sulfide) resin assemblies developed in this study have superior adhesive property. Therefore, these assemblies might be a viable candidate for a sealing technique for Li ion batteries. PMID:26301310

  15. Preparation and analysis of anodic aluminum oxide films with continuously tunable interpore distances

    NASA Astrophysics Data System (ADS)

    Qin, Xiufang; Zhang, Jinqiong; Meng, Xiaojuan; Deng, Chenhua; Zhang, Lifang; Ding, Guqiao; Zeng, Hao; Xu, Xiaohong

    2015-02-01

    Nanoporous anodic aluminum oxides are often used as templates for preparation of nanostructures such as nanodot, nanowire and nanotube arrays. The interpore distance of anodic aluminum oxide is the most important parameter in controlling the periodicity of these nanostructures. Herein we demonstrate a simple and yet powerful method to fabricate ordered anodic aluminum oxides with continuously tunable interpore distances. By using mixed solution of citric and oxalic acids with different molar ratio, the range of anodizing voltages within which self-ordered films can be formed were extended to between 40 and 300 V, resulting in the interpore distances change from 100 to 750 nm. Our work realized very broad range of interpore distances in a continuously tunable fashion and the experiment processes are easily controllable and reproducible. The dependence of the interpore distances on acid ratios in mixed solutions was discussed through analysis of anodizing current and it was found that the effective dissociation constant of the mixed acids is of great importance. The interpore distances achieved are comparable to wavelengths ranging from UV to near IR, and may have potential applications in optical meta-materials for photovoltaics and optical sensing.

  16. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  17. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-01

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10-4 Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  18. Reactively Deposited Aluminum Oxide and Fluoropolymer Filled Aluminum Oxide Protective Coatings for Polymers

    NASA Technical Reports Server (NTRS)

    Rutledge, Sharon K.; Banks, Bruce A.; Hunt, Jason

    1995-01-01

    Reactive ion beam sputter deposition of aluminum simultaneous with low energy arrival of oxygen ions at the deposition surface enables the formation of highly transparent aluminum oxide films. Thick (12 200 A), adherent, low stress, reactively deposited aluminum oxide films were found to provide some abrasion resistance to polycarbonate substrates. The reactively deposited aluminum oxide films are also slightly more hydrophobic and more transmitting in the UV than aluminum oxide deposited from an aluminum oxide target. Simultaneous reactive sputter deposition of aluminum along with polytetrafluoroethylene (PTFE Teflon) produces fluoropolymer-filled aluminum oxide films which are lower in stress, about the same in transmittance, but more wetting than reactively deposited aluminum oxide films. Deposition properties, processes and potential applications for these coatings will be discussed.

  19. Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

    NASA Astrophysics Data System (ADS)

    Miki, Shohei; Iguchi, Koji; Kitano, Sho; Hayakashi, Koki; Hotta, Yasushi; Yoshida, Haruhiko; Ogura, Atsushi; Satoh, Shin-ichi; Arafune, Koji

    2015-08-01

    Aluminum oxide (AlOx) films were deposited by mist chemical vapor deposition (MCVD) in air for p-type crystalline silicon, and the effects of the deposition temperature (Tdep) and AlOx film thickness on the maximum surface recombination velocities (Smax) were evaluated. It was found that Smax was improved with increasing Tdep. The AlOx film deposited at 400 °C exhibited the best Smax value of 2.8 cm/s, and the passivation quality was comparable to that of AlOx deposited by other vacuum-based techniques. Smax was also improved with increasing film thickness. When the film thickness was above 10 nm, Smax was approximately 10 cm/s. From the Fourier transform infrared spectra, it was found that the AlOx films deposited by MCVD consisted of an AlOx layer and a Si-diffused AlOx layer. In addition, it is important for the layers to be thick enough to obtain high-quality passivation.

  20. Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films

    NASA Astrophysics Data System (ADS)

    Agashe, C.; Kluth, O.; Hüpkes, J.; Zastrow, U.; Rech, B.; Wuttig, M.

    2004-02-01

    This study addresses the electrical and optical properties of radio frequency magnetron sputtered aluminum doped zinc oxide (ZnO:Al) films. The main focus was on the improvement in carrier mobility μ to achieve simultaneously high transparency for visible and particularly near-infrared light and low resistivity. The influence of Al concentration in the target, film thickness, sputter power, deposition pressure, and substrate temperature on material properties was investigated. The structural, compositional, electrical and optical properties were studied using x-ray diffraction, secondary ion mass spectrometry (SIMS), room temperature Hall effect measurements and spectral photometry, respectively. All ZnO:Al films were polycrystalline and preferentially oriented along [002]. The grain size along the direction of growth increased with higher Al doping and with increasing film thickness. The SIMS measurements revealed that the Al concentration in the film was nearly the same as in the target. Carrier concentration N and mobility μ are determined by the target Al concentration. In addition μ is influenced by the film thickness and the sputter pressure. For each Al concentration, the highest μ was generally observed at low deposition pressures. By using a target with low Al2O3 concentration of 0.5 wt %, μ could be improved up to 44.2 cm2/V s while maintaining the electrical resistivity ρ as low as 3.8×10-4 Ω cm. For these films the transparency in the near-infrared wavelength range strongly improved which makes them particularly interesting for the application in optoelectronic devices like thin-film solar cells. The μ-N dependence for films deposited under diverse conditions was studied to identify a practical limit for μ.

  1. Application of a palladium hexacyanoferrate film-modified aluminum electrode to electrocatalytic oxidation of hydrazine.

    PubMed

    Razmi, Habib; Azadbakht, Azadeh; Sadr, Moayad Hossaini

    2005-11-01

    A palladium hexacyanoferrate (PdHCF) film as an electrocatalytic material was obtained at an aluminum (Al) electrode by a simple electroless dipping method. The modified Al electrode demonstrated a well-behaved redox couple due to the redox reaction of the PdHCF film. The PdHCF film showed an excellent electrocatalytic activity toward the oxidation of hydrazine. The electrocatalytic oxidation of hydrazine was studied by cyclic voltammetry and rotating disk electrode voltammetry techniques. A calibration graph obtained for the hydrazine consisted of two segments (localized at concentration ranges 0.39-10 and 20-75 mM). The rate constant k and transfer coefficient alpha for the catalytic reaction and the diffusion coefficient of hydrazine in the solution D, were found to be 3.11 x 10(3) M(-1) s(-1), 0.52 and 8.03 x 10(-6) cm2 s(-1) respectively. The modified electrode was used to amperometric determination of hydrazine in photographic developer. The interference of ascorbic acid and thiosulfate were investigated and greatly reduced using a thin film of Nafion on the modified electrode. The modified electrode indicated reproducible behavior and a high level of stability during electrochemical experiments, making it particularly suitable for analytical purposes. PMID:16317900

  2. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    SciTech Connect

    Morales-Masis, M. Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  3. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Morales-Masis, M.; Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2)-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  4. Effect of annealing temperature on the surface morphology and electrical properties of aluminum doped zinc oxide thin films prepared by sol-gel spin-coating method

    SciTech Connect

    Mamat, M. H.; Hashim, H.; Rusop, M.

    2008-05-20

    Aluminum doped zinc oxide thin films were prepared through sol gel and spin coating technique from zinc acetate dihydrate and aluminum nitrate nanohydrate in alcoholic solution. The electrical properties and surface morphology study are investigated for the thin films annealed at 350{approx}500 deg. C. Zinc oxide thin films deposited on glass and silicon substrates were characterized using electron microscopy (SEM) and current-voltage (I-V) measurement scanning for surface morphology and electrical properties study respectively. The SEM investigation shows that zinc oxide thin films are denser at higher annealing temperature. The result indicates electrical properties of aluminum doped zinc oxide thin films are improved with annealing temperatures. The resistivity of aluminum doped zinc oxide thin films are decreased with annealing temperature up to 500 deg. C.

  5. Optical properties of one-dimensional photonic crystals based on porous films of anodic aluminum oxide

    NASA Astrophysics Data System (ADS)

    Gorelik, V. S.; Klimonsky, S. O.; Filatov, V. V.; Napolskii, K. S.

    2016-04-01

    The optical properties of one-dimensional photonic crystals based on porous anodic aluminum oxide films have been studied by measuring transmittance and specular reflectance spectra in the visible and UV spectral regions. Angular dependences of the spectral positions of optical stop bands are obtained. It is shown that the reflectance within the first stop band varies from point to point on the sample surface, reaching a level of 98-99% at some points. The dispersion relation for electromagnetic waves in the model of infinite periodic structure is calculated for the samples under study. The possibility of using models with an infinite or finite number of layers to calculate reflectance spectra near the first optical stop band is discussed.

  6. Effect of Holding Time Before Solidification on Double-Oxide Film Defects and Mechanical Properties of Aluminum Alloys

    NASA Astrophysics Data System (ADS)

    El-Sayed, Mahmoud Ahmed; Salem, Hanadi A. G.; Kandeil, Abdelrazek Youssef; Griffiths, W. D.

    2011-12-01

    Double-oxide films (bifilms) have been held responsible for the variability in mechanical properties of aluminum castings. It has been suggested that the air entrapped inside a bifilm can react with the surrounding melt, leading to its consumption, which might improve the mechanical properties of the castings. In this work the effect of holding the melt before solidification on the distribution of mechanical properties, and by implication on entrained double oxide films, was investigated for several different aluminum alloys. The Weibull moduli of plate castings were determined under tensile conditions, and their fracture surfaces were examined for evidence of oxide films. The results suggested the occurrence of two competing mechanisms during the holding treatment: (1) the consumption of air inside the bifilms by reaction with the surrounding molten metal that may lead to improvements in mechanical properties and (2) the accompanying diffusion of hydrogen into the bifilms, which would be expected to have a deleterious effect on properties.

  7. Atomic layer deposited lithium aluminum oxide: (In)dependency of film properties from pulsing sequence

    SciTech Connect

    Miikkulainen, Ville Nilsen, Ola; Fjellvåg, Helmer; Li, Han; King, Sean W.; Laitinen, Mikko; Sajavaara, Timo

    2015-01-01

    Atomic layer deposition (ALD) holds markedly high potential of becoming the enabling method for achieving the three-dimensional all-solid-state thin-film lithium ion battery (LiB). One of the most crucial components in such a battery is the electrolyte that needs to hold both low electronic conductivity and at least fair lithium ion conductivity being at the same time pinhole free. To obtain these desired properties in an electrolyte film, one necessarily has to have a good control over the elemental composition of the deposited material. The present study reports on the properties of ALD lithium aluminum oxide (Li{sub x}Al{sub y}O{sub z}) thin films. In addition to LiB electrolyte applications, Li{sub x}Al{sub y}O{sub z} is also a candidate low dielectric constant (low-k) etch stop and diffusion barrier material in nanoelectronics applications. The Li{sub x}Al{sub y}O{sub z} films were deposited employing trimethylaluminum-O{sub 3} and lithium tert-butoxide-H{sub 2}O for Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, respectively. The composition was aimed to be controlled by varying the pulsing ratio of those two binary oxide ALD cycles. The films were characterized by several methods for composition, crystallinity and phase, electrical properties, hardness, porosity, and chemical environment. Regardless of the applied pulsing ratio of Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, all the studied ALD Li{sub x}Al{sub y}O{sub z} films of 200 and 400 nm in thickness were polycrystalline in the orthorhombic β-LiAlO{sub 2} phase and also very similar to each other with respect to composition and other studied properties. The results are discussed in the context of both fundamental ALD chemistry and applicability of the films as thin-film LiB electrolytes and low-k etch stop and diffusion barriers.

  8. Microstructural Effects on the Reactivity of Nano-Aluminum/Iodine (V) Oxide Films

    NASA Astrophysics Data System (ADS)

    Little, B.; Welle, E.; Martinez, L.; Nittinger, J.; Bogle, M.; Emery, S.; Lindsay, C.; Schrand, A.

    2013-06-01

    Recent efforts investigating the self-ignition mechanism of nanoaluminum blended with iodine (V) oxide in the form of powders with and without additives suggests that ignition begins below the decomposition point of either reactant and takes place at the alumina shell surrounding the aluminum nanoparticle. As observed in previous studies of powder composites, microstructural features such as particle morphology are expected to strongly influence properties that govern the combustion behavior of this energetic material (EM). In this study, highly reactive composites containing amorphous and/or crystalline iodine oxide and micron/nano-sized Al was blended with an additive and deposited as films. Physiochemical techniques such as thermal gravimetric analysis, scanning calorimetry, X-ray diffraction, electron microscopy, high-speed imaging and planar doppler velocimetry were employed to characterize these EMs with emphasis on correlating the reaction rate (burn rate) with inherent microstructural features (porosity, thickness, TMD, etc). This work was a continuation of efforts to probe the self-ignition mechanism of Al-iodine (V) oxide composites.

  9. Microstructural Effects on the Reactivity of Nano-Aluminum/Iodine (V) Oxide Films

    NASA Astrophysics Data System (ADS)

    Little, Brian; Langhals, Jarred; Emery, Sam; Martinez, Lucas; Welle, Eric; Lindsay, Michael

    2015-06-01

    Recent efforts investigating the self-ignition mechanism of nanoaluminum blended with iodine (V) oxide in the form of powders with and without additives suggests that ignition begins below the decomposition point of either reactant and takes place at the alumina shell surrounding the aluminum nanoparticle. As observed in previous studies of powder composites, microstructural features such as particle morphology are expected to strongly influence properties that govern the combustion behavior of this energetic material (EM). In this study, highly reactive composites containing amorphous and/or crystalline iodine oxide and nano-sized Al was blended with an additive and deposited as films. Physiochemical techniques such as thermal gravimetric analysis, scanning calorimetry, X-ray diffraction, electron microscopy, high-speed imaging, time of arrival data via photodiodes and planar doppler velocimetry were employed to characterize these EMs with emphasis on correlating the reaction rate (burn rate) with inherent microstructural features (porosity, thickness, TMD, etc). This work was a continuation of efforts to probe the self-ignition mechanism of Al-iodine (V) oxide composites.

  10. Plasmon-induced optical switching of electrical conductivity in porous anodic aluminum oxide films encapsulated with silver nanoparticle arrays.

    PubMed

    Huang, Chen-Han; Lin, Hsing-Ying; Lau, Ben-Chao; Liu, Chih-Yi; Chui, Hsiang-Chen; Tzeng, Yonhua

    2010-12-20

    We report on plasmon induced optical switching of electrical conductivity in two-dimensional (2D) arrays of silver (Ag) nanoparticles encapsulated inside nanochannels of porous anodic aluminum oxide (AAO) films. The reversible switching of photoconductivity greatly enhanced by an array of closely spaced Ag nanoparticles which are isolated from each other and from the ambient by thin aluminum oxide barrier layers are attributed to the improved electron transport due to the localized surface plasmon resonance and coupling among Ag nanoparticles. The photoconductivity is proportional to the power, and strongly dependent on the wavelength of light illumination. With Ag nanoparticles being isolated from the ambient environments by a thin layer of aluminum oxide barrier layer of controlled thickness in nanometers to tens of nanometers, deterioration of silver nanoparticles caused by environments is minimized. The electrochemically fabricated nanostructured Ag/AAO is inexpensive and promising for applications to integrated plasmonic circuits and sensors. PMID:21197062

  11. A study of the initial oxidation of evaporated thin films of aluminum by AES, ELS, and ESD

    NASA Technical Reports Server (NTRS)

    Bujor, M.; Larson, L. A.; Poppa, H.

    1982-01-01

    The room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.

  12. Sol-gel deposition and plasma treatment of intrinsic, aluminum-doped, and gallium-doped zinc oxide thin films as transparent conductive electrodes

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2015-09-01

    Zinc oxide and aluminum/gallium-doped zinc oxide thin films were deposited via sol-gel spin-coating technique. Employing plasma treatment as alternative to post thermal annealing, we found that the morphologies of these thin films have changed and the sheet resistances have been significantly enhanced. These plasma-treated thin films also show very good optical properties, with transmittance above 90% averaged over the visible wavelength range. Our best aluminum/gallium-doped zinc oxide thin films exhibit sheet resistances (Rs) of ~ 200 Ω/sq and ~ 150 Ω/sq, respectively.

  13. Characterization of molybdenum doped indium oxide/aluminum doped zinc oxide thin film stacks for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Elamurugu, Elangovan; Flores, Raquel; Janeiro, Ricardo; Dahlem, Marcus; Viegas, Jaime

    2014-03-01

    Multilayer (ML) thin films, based on indium molybdenum oxide (IMO) and aluminum zinc oxide (AZO), having different stacking were deposited using RF sputtering at room temperature (RT). The total-layer thickness of the MLs ranges between 93 nm and 98 nm. The deposited films were characterized by their structural, electrical, microstructural, and optical properties. X-ray diffraction (XRD) peaks obtained at 2θ of around 30.6° and 34.27° are matched with cubic-In2O3 (222) and hexagonal-ZnO (002), respectively. The MLs have both nano-crystalline and polycrystalline structures depending on the layer properties. A conspicuous feature of XRD analysis is the absence of diffraction peak from 50 nm thick IMO layer when it is stacked below 50 nm thick AZO, whereas it appears significantly when the stacking is reversed to place IMO above AZO layer. Hall measurements confirmed that the deposited MLs are n- type conducting and the electrical properties are varied as a function of layer properties. The deposited MLs show high shortwavelength infrared transmittance (SWIRT) even at 3300 nm, which is ranging as high as 75 % - 90 %. Overall, the MLs show high transmittance in the entire Vis-SWIR region. The optical band gap (Eg) calculated using the absorption coefficient (α) and photon energy (hν) of the deposited MLs is ranging between 3.19 eV and 3.56 eV, depending on the layer properties. Selected as- deposited films were annealed in open air at 400 °C for 1 h; the transmittance of annealed films was improved but their electrical properties deteriorated. Atomic force microscopy (AFM) analysis shows that the root-mean-square (RMS) roughness of the MLs ranges between 0.8 nm and 1.5 nm.

  14. Influence of the surface pre-treatment of aluminum on the processes of formation of cerium oxides protective films

    NASA Astrophysics Data System (ADS)

    Andreeva, R.; Stoyanova, E.; Tsanev, A.; Stoychev, D.

    2016-03-01

    It is known that there is special interest in the contemporary investigations on conversion treatment of aluminum aimed at promoting its corrosion stability, which is focused on electrolytes on the basis of salts of metals belonging to the group of rare-earth elements. Their application is especially attractive, as it enables a successful substitution of the presently applied highly efficient, but at the same time toxic Cr6+-containing electrolytes. The present paper presents a study on the influence of the preliminary alkaline activation and acidic de-oxidation of the aluminum surface on the processes of immersion formation of protective cerium oxides films on Al 1050. The results obtained show that their deposition from simple electrolytes (containing only salts of Ce3+ ions) on the Al surface, treated only in alkaline solution, occurs at a higher rate, which leads to preparing thicker oxide films having a better protective ability. In the cases when the formation of oxide films is realized in a complex electrolyte (containing salts of Ce3+ and Cu2+ ions), better results are obtained with respect to the morphology and protective action of cerium oxides film on samples that have been consecutively activated in alkaline solution and deoxidized in acidic solution. Electrochemical investigations were carried out in a model corrosion medium (0.1 M NaCl); it was shown that the cerium protective films, deposited by immersion, have a cathodic character with regard to the aluminum support and inhibit the occurrence of the depolarizing corrosion process -- the reaction of oxygen reduction.

  15. Effect of Aluminum concentration on structural and optical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films for transparent electrode applications

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Subba Rao, T.

    2012-11-01

    Zinc Aluminum Oxide(ZAO) thin films were deposited on glass substrates by DC reactive magnetron sputtering in an Ar+O2 gas mixture using commercial available Zn metal (99.99% purity) and Al (99.99% purity) targets of 2 inch diameter and 4 mm thickness. The films were characterized and the effect of aluminum (Al) concentration (2 at %-6 at %) on the structural and optical properties was studied. The average crystallite size obtained from Scherer formula is in the range of 32-44nm. Microstructural analysis using Scanning Electron Microscope (SEM) supplemented with EDS is carried out to find the grain size as well as to find the composition elemental data of prepared thin films. Optical study is performed to calculate the extinction coefficient (k), absorption coefficient (a), optical band gap (Eg) using transmission spectra obtained using UV-VIS-NIR spectrophotometer. There was widening of optical band gap with increasing aluminum concentration. ZAO film with low resistivity 3.2 × 10-4 cm and high transmittance of 80% is obtained for 3at% doped Al which is crucial for optoelectronic applications.

  16. Interfacial interactions of poly(ether ketone ketone) polymer coatings onto oxide-free phosphate films on an aluminum surface

    SciTech Connect

    Asunskis, A. L.; Sherwood, P. M. A.

    2007-07-15

    This article continues a series of papers that shows how thin (10 nm or less) oxide-free phosphate films can be formed on a number of metals. The films formed have potential as corrosion resistant films. Previous papers have shown that it is possible to extend the range of the surface coatings that can be formed by placing a thin polymer layer over the phosphate layer. In this work it is shown how the water insoluble polymer poly(ether ketone ketone) (PEKK) can be placed over a thin oxide-free phosphate film on aluminum metal. The surface and the interfaces involved were studied by valence band and core level x-ray photoelectron spectroscopy. Difference spectra in the valence band region were used to show that there is a chemical interaction between the PEKK and phosphate thin films on the aluminum metal. Three different phosphate film compositions were studied using different phosphorous containing acids, H{sub 3}PO{sub 4}, H{sub 3}PO{sub 3}, and H{sub 3}PO{sub 2}. This type of interaction illustrates the potential of phosphates to act as adhesion promoters. The valence band spectra are interpreted by calculations.

  17. Surface morphology and resistivity of aluminum oxide films prepared by plasma CVD combined with ion beam irradiation

    NASA Astrophysics Data System (ADS)

    Nakai, H.; Shinohara, J.; Sassa, T.; Ikegami, Y.

    1997-01-01

    Plasma CVD combined with simultaneous ion beams has been developed in order to prepare ceramic insulating films which have strong force of adhesion and higher electric resistivity at high temperatures. Aluminum oxide (Al 2O 3) films were deposited on nickel based superalloy (Inconel 718) by thermal CVD, plasma CVD and ion beam assisted plasma CVD at the several substrate temperatures. The surface morphology of these films was analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was confirmed that, by ion beam irradiation, the extent of crystallization was enhanced at lower substrate temperature and grain size became smaller. The electric resistivity was measured in the temperature range of RT to 800°C. The film, deposited by ion beam assisted plasma CVD at 800°C, had higher electric resistivity than the films by conventional CVD.

  18. Electrical and Optical Properties of Hydrogen Doped Aluminum-Doped Zinc Oxide Thin Films for Low Cost Applications.

    PubMed

    Park, Yong Seob; Park, Young; Kwon, Samyoung; Kim, Eung Kwon; Choi, Wonseok; Kim, Donguk; Kim, Minha; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were prepared on glass substrate using a magnetron sputtering system. In this work, a powder target was used as a source material for low cost applications, instead of a conventional sintered ceramic target. The effects of the hydrogen gas ratio on the electrical and optical properties of the AZO films. The hydrogen doped AZO (AZO:H) films had a hexagonal polycrystalline structure. A small amount of hydrogen gas deteriorated the electrical and optical properties of the AZO:H films. However, these properties improved, as the H2/(H2 + Ar) gas ratio increased. The AZO:H films grown at an H2/(H2+Ar) ratio of 10% showed good properties for low cost applications, such as a low resistivity of 1.35 x 10(-3) Ω-cm, high average transmittance of 83.1% in the visible range of light. PMID:27483879

  19. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

    PubMed Central

    2014-01-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10−4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films. PMID:25352768

  20. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices.

    PubMed

    Chang, Shang-Chou

    2014-01-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10(-4) Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films. PMID:25352768

  1. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Chang, Shang-Chou

    2014-10-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10-4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films.

  2. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  3. Monomolecular layers and thin films of silane coupling agents by vapor-phase adsorption on oxidized aluminum

    SciTech Connect

    Kurth, D.G.; Bein, T.

    1992-08-06

    Thin films of tetraethoxysilane [TEOS], (3-bromopropyl)trimethoxysilane [BPS], trimethoxyvinylsilane [VS], and 3-(trimethoxysilyl) propyl methacrylate [TPM] on oxidized aluminum surfaces have been investigated by reflection-absorption FTIR spectroscopy, ellipsometry, contact angle, and quartz crystal microbalance (QCM) measurements. Gravimetric measurements with the QCM can reveal quantitative aspects of adsorption and film formation, even for films as thin as monolayers. Adsorption of these silane coupling agents from solution typically produces multilayer films. Vapor-phase adsorption of TEOS and TPM at room temperature results in monomolecular layers. The coupling agents VS and BPS require additional heating after the vapor-phase adsorption to initiate the hydrolysis and condensation reactions necessary for the surface attachment, which produces one to three layers. For vapor adsorbed films a packing density of 4-7 molecules/nm{sup 2} was found. The data strongly suggest that the organic moieties in several of these films have a preferential orientation on the surface; they can be viewed as two-dimensional, oligomeric siloxane networks with oriented organic chains. Subsequent heating of TPM films results in structural rearrangements; heating of TEOS results in complete condensation to SiO{sub 2} films. 43 refs., 6 figs., 4 tabs.

  4. Investigations on opto-electronical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Rao, T. Subba

    2013-01-01

    In the present study transparent conducting zinc aluminum oxide (ZAO) thin films were prepared by DC reactive magnetron sputtering technique. The films were deposited on glass substrates at 200 °C and annealed from 200 °C to 500 °C. XRD patterns of ZAO films shows (0 0 2) diffraction peak of hexagonal wurtzite, meaning that the films have c-axis orientation perpendicular to the substrate. Crystallite size was calculated from X-ray diffraction (XRD) spectra using the Scherrer formula. The surface morphology of the films was observed by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The electrical conductivity increases with increase of annealing temperature. The activation energies of conduction were obtained from an Arrhenius equation. The best characteristics of ZAO films have been obtained for the films annealed at 400 °C with an average transmittance of 88% and a minimum resistivity of 2.2 × 10-4 Ω cm. The optical band gap, optical constants, and electron concentrations of ZAO films are obtained from UV-vis-IR spectrophotometer data.

  5. MTBE OXIDATION BY BIFUNCTIONAL ALUMINUM

    EPA Science Inventory

    Bifunctional aluminum, prepared by sulfating zero-valent aluminum with sulfuric acid, has a dual functionality of simultaneously decomposing both reductively- and oxidatively-degradable contaminants. In this work, the use of bifunctional aluminum for the degradation of methyl te...

  6. X-ray photoelectron spectroscopic study of the oxide film on an aluminum-tin alloy in 3.5% sodium chloride solution

    SciTech Connect

    Venugopal, A.; Selvam, P.; Raja, V.S.; Veluchamy, P.; Minoura, H.

    1997-10-01

    Oxide films on Al and an Al-Sn alloy were analyzed by x-ray photoelectron spectroscopy (XPS) after immersion in 3.5% sodium chloride (NaCl) solution. Results showed Sn exhibited both Sn{sup 2+} and Sn{sup 4+} oxidation stats in the oxide film. It was proposed that incorporation of these cations in the film would result in generation of more anionic and cationic vacancies in aluminum oxide (Al{sub 2}O{sub 3}), leading to active dissolution of Al.

  7. Effect of Sputtering Gas environments on the Properties of Aluminum-doped Zinc Oxide Thin Films for Photovoltaic Application

    SciTech Connect

    Chauhan, Ram Narayan; Kumar, Jitendra; Singh, C.; Anand, R. S.

    2011-10-20

    Aluminum-doped zinc oxide thin films have been deposited on glass substrates by R.F. sputtering using ZnO(98%)-Al{sub 2}O{sub 3}(2%) target in different sputtering gaseous environments, viz., Ar, Ar/O{sub 2} and Ar/N{sub 2}+H{sub 2} at 80 deg. C. These films have been studied with regard to phase, microstructure, optical absorption and sheet resistance for application in photovoltaic devices as transparent conducting electrodes. The properties of the films are shown to strongly depend on the sputtering gas(es). The films exhibit a wurtzite-type hexagonal structure with the (00.2) preferred orientation, the c-axis perpendicular to the substrate. The intensity of 00.2 diffraction peak and the average crystallite size remain almost the same when the films are prepared under pure Ar or Ar/O{sub 2} environment. However the average crystallite size increases while electrical resistance decreases with introduction of nitrogen and hydrogen in comparison to oxygen in argon. Nevertheless, the optimum value of optical transmittance and sheet resistance of the films deposited in pure argon are found to be 85-96% in the wavelength range 400-800 nm and 65 {Omega}/{open_square}, respectively.

  8. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition.

    PubMed

    Wang, Zi-Yi; Zhang, Rong-Jun; Lu, Hong-Liang; Chen, Xin; Sun, Yan; Zhang, Yun; Wei, Yan-Feng; Xu, Ji-Ping; Wang, Song-You; Zheng, Yu-Xiang; Chen, Liang-Yao

    2015-01-01

    The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al2O3 thin films were measured and analyzed before and after annealing in nitrogen condition in the wavelength range from 250 to 1,000 nm, respectively. The refractive index of Al2O3 thin films was described by Cauchy model and the ellipsometric spectra data were fitted to a five-medium model consisting of Si substrate/SiO2 layer/Al2O3 layer/surface roughness/air ambient structure. It is found that the refractive index of Al2O3 thin films decrease with increasing film thickness and the changing trend revised after annealing. The phenomenon is believed to arise from the mechanical stress in ALD-Al2O3 thin films. A thickness transition is also found by transmission electron microscopy (TEM) and SE after 900°C annealing. PMID:25852343

  9. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Wang, Zi-Yi; Zhang, Rong-Jun; Lu, Hong-Liang; Chen, Xin; Sun, Yan; Zhang, Yun; Wei, Yan-Feng; Xu, Ji-Ping; Wang, Song-You; Zheng, Yu-Xiang; Chen, Liang-Yao

    2015-02-01

    The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al2O3 thin films were measured and analyzed before and after annealing in nitrogen condition in the wavelength range from 250 to 1,000 nm, respectively. The refractive index of Al2O3 thin films was described by Cauchy model and the ellipsometric spectra data were fitted to a five-medium model consisting of Si substrate/SiO2 layer/Al2O3 layer/surface roughness/air ambient structure. It is found that the refractive index of Al2O3 thin films decrease with increasing film thickness and the changing trend revised after annealing. The phenomenon is believed to arise from the mechanical stress in ALD-Al2O3 thin films. A thickness transition is also found by transmission electron microscopy (TEM) and SE after 900°C annealing.

  10. Solution Processing of Cadmium Sulfide Buffer Layer and Aluminum-Doped Zinc Oxide Window Layer for Thin Films Solar Cells

    NASA Astrophysics Data System (ADS)

    Alam, Mahboob; Islam, Mohammad; Achour, Amine; Hayat, Ansar; Ahsan, Bilal; Rasheed, Haroon; Salam, Shahzad; Mujahid, Mohammad

    2014-07-01

    Cadmium sulfide (CdS) and aluminum-doped zinc oxide (Al:ZnO) thin films are used as buffer layer and front window layer, respectively, in thin film solar cells. CdS and Al:ZnO thin films were produced using chemical bath deposition (CBD) and sol-gel technique, respectively. For CBD CdS, the effect of bath composition and temperature, dipping time and annealing temperature on film properties was investigated. The CdS films are found to be polycrystalline with metastable cubic crystal structure, dense, crack-free surface morphology and the crystallite size of either few nanometers or 12-17 nm depending on bath composition. In case of CdS films produced with 1:2 ratio of Cd and S precursors, spectrophotometer studies indicate quantum confinement effect, owing to extremely small crystallite size, with an increase in Eg value from 2.42 eV (for bulk CdS) to 3.76 eV along with a shift in the absorption edge toward 330 nm wavelength. The optimum annealing temperature is 400°C beyond which film properties deteriorate through S evaporation and CdO formation. On the other hand, Al:ZnO films prepared via spin coating of precursor sols containing 0.90-1.10 at.% Al show that, with an increase in Al concentration, the average grain size increases from 28 nm to 131 nm with an associated decrease in root-mean-square roughness. The minimum value of electrical resistivity, measured for the films prepared using 0.95 at.% Al in the precursor sol, is 2.7 × 10-4 Ω ṡ cm. The electrical resistivity value rises upon further increase in Al doping level due to introduction of lattice defects and Al segregation to the grain boundary area, thus limiting electron transport through it.

  11. Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.

    PubMed

    Branquinho, Rita; Salgueiro, Daniela; Santos, Lídia; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

    2014-11-26

    Solution processing has been recently considered as an option when trying to reduce the costs associated with deposition under vacuum. In this context, most of the research efforts have been centered in the development of the semiconductors processes nevertheless the development of the most suitable dielectrics for oxide based transistors is as relevant as the semiconductor layer itself. In this work we explore the solution combustion synthesis and report on a completely new and green route for the preparation of amorphous aluminum oxide thin films; introducing water as solvent. Optimized dielectric layers were obtained for a water based precursor solution with 0.1 M concentration and demonstrated high capacitance, 625 nF cm(-2) at 10 kHz, and a permittivity of 7.1. These thin films were successfully applied as gate dielectric in solution processed gallium-zinc-tin oxide (GZTO) thin film transistors (TFTs) yielding good electrical performance such as subthreshold slope of about 0.3 V dec(-1) and mobility above 1.3 cm2 V(-1) s(-1). PMID:25354332

  12. Electrode patterning and annealing processes of aluminum-doped zinc oxide thin films using a UV laser system

    NASA Astrophysics Data System (ADS)

    Hsiao, Wen-Tse; Tseng, Shih-Feng; Huang, Kuo-Cheng; Chiang, Donyau

    2013-01-01

    This study presents the hybrid processing (patterning and annealing) of aluminum-doped zinc oxide (AZO) films in a one-step process using a diode-pumped-solid-state (DPSS) ultraviolet (UV) laser system. The focused laser beam had a diameter of 30 μm and the positive defocused laser beam had a diameter of 1 mm. Both beams were adjusted using a UV laser-processing system. AZO films were deposited on Corning Eagle 2000® optical glass sheets with a thickness of 0.7 mm using a sputtering method. The deposited films were approximately 200 nm. The optoelectronic properties of machined (patterning and annealing) AZO films depend on the laser pulse frequency and galvanometer scanning speed. The surface morphology, roughness, optical transmittance, and resistivity of the films after the laser patterning and annealing processes were measured using a three-dimensional confocal laser scanning microscope, a field emission scanning electron microscope (FE-SEM), a spectrophotometer, and a four-point probe instrument, respectively. Experimental results indicate that the ablation depth increased as the pulse repetition frequency increased. The ablation depth also decreased as the galvanometric scanning speed increased. The transmittance spectra of the film changes slightly after laser annealing, and the average transmittance in the visible region is approximately 83%. All resistivity values of laser-patterned and annealed AZO films decreased significantly. The structural properties grain size was calculated firm the X-ray diffraction (XRD) spectra using the Scherrer equation that increased from 7.4 nm to 12 nm as the annealing scanning speed decreased from 800 mm/s to 400 mm/s. The root mean square (RMS) values of annealed AZO films treated with a laser scanning speed of 500 mm/s with a pulse repetition frequency of 40 kHz, 55 kHz, and 70 kHz were 1.1 nm, 1.2 nm, and 1.8 nm, respectively.

  13. Effects of target angle on the properties of aluminum doped zinc oxide films prepared by DC magnetron sputtering for thin film solar cell applications.

    PubMed

    Park, Hyeongsik; Iftiquar, S M; Thuy, Trinh Than; Jang, Juyeon; Ahn, Shihyun; Kim, Sunbo; Lee, Jaehyeong; Jung, Junhee; Shin, Chonghoon; Kim, Minbum; Yi, Junsin

    2014-10-01

    An aluminum doped zinc oxide (AZO) films for front contacts of thin film solar cells, in this work, were prepared by DC magnetron sputtering with different target angles. Effects of target angles on the structural and electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. The surface became more irregular with increasing the target angle due to larger grains. The self-surface textured morphology, which is a favorable property as front layer of solar cell, exhibited at target angle of 72.5 degrees. We obtained the films with various opto-electronic properties by controlling target angle from 32.5 degrees to 72.5 degrees. The spectral haze increased substantially with the target angle, whereas the electrical resistivity was increased. The conversion efficiency of amorphous silicon solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density and fill factor, compared to cell with relatively flat AZO films. PMID:25942853

  14. Deposition of aluminum-doped zinc oxide thin films for optical applications using rf and dc magnetron sputter deposition

    SciTech Connect

    Sivakumar, Kousik; Rossnagel, S. M.

    2010-07-15

    Aluminum-doped zinc oxide films were deposited by dc and rf magnetron sputtering from ZnO(98%)Al{sub 2}O{sub 3}(2%) target at room temperature on silicon and glass substrates under a variety of process conditions with the goal of attaining the highest transmittance and lowest resistivity for photovoltaic applications. The magnetron power and pressure were varied. For many dielectric deposition systems, added oxygen is necessary to achieve the appropriate stoichiometry. The effect of oxygen on film properties was then studied by varying the oxygen partial pressure from 1.5x10{sup -5} to 4.0x10{sup -5} T at a constant Ar pressure, with the result that any added oxygen was deleterious. Films deposited under power, pressure, and low-oxygen conditions were then characterized for electrical and optical properties. Following this, the dc and rf sputtered films were annealed at up to 400 deg. C seconds using rapid thermal annealing (RTA), and the influence of annealing on resistivity, transmittance, band gap, as well as grain growth and stress was studied. The effect of RTA was immediate and quite significant on dc films while the effect on rf films was not as profound. As-deposited rf films had a higher average transmittance (87%) and lower resistivity (5.5x10{sup -4} {Omega} cm) compared to as-deposited dc films (84.2% and 8.9x10{sup -4} {Omega} cm). On the other hand, after RTA at 400 deg. C for 60 s, dc films exhibited better average transmittance (92.3%) and resistivity (2.9x10{sup -4} {Omega} cm) than rf films (90.7% and 4.0x10{sup -4} {Omega} cm). The band gap of dc films increased from 3.55 to 3.80 eV while that of rf films increased from 3.76 to 3.85 eV. Finally, dc and rf films were textured in 0.1% HCl and compared to U-type Asahi glass for resistivity and transmittance.

  15. Adsorption of titanium, chromium, and copper atoms on thin aluminum and magnesium oxide film surfaces

    NASA Astrophysics Data System (ADS)

    Tvauri, I. V.; Turiev, A. M.; Tsidaeva, N. I.; Gazzaeva, M. E.; Vladimirov, G. G.; Magkoev, T. T.

    2012-04-01

    Methods of Auger electron spectroscopy (AES), spectroscopy of characteristic electron energy losses (SCEEL), slow electron diffraction (SED), and contact potential difference (CPD) in ultrahigh vacuum are used to investigate the adsorption-emission properties and stability of two-component film systems formed by putting of Ti, Cr, and Cu atoms on MgO-Mo(011) and Al2O3-Mo(011) surfaces. All atoms have the properties of electronegative adsorbates. Continuous adatom monolayers are formed on the Al2O3-Mo(011) system surface, and three-dimensional islands are formed on the MgO-Mo(011) surface. The properties of monoatomic films on the oxide layer surface are close to those observed for bulk materials. No radical changes of the system properties are detected with increasing dielectric layer thickness. The thermal stability of the newly formed structures decreases in the order Ti, Cr, Cu, Al2O3(MgO), and Mo(011).

  16. Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system

    SciTech Connect

    Liu, D.-S.; Sheu, C.-S.; Lee, C.-T.

    2007-08-01

    Al-N codoped zinc oxide films were prepared using a radio-frequency magnetron cosputtering system at room temperature. AlN and ZnO materials were employed as the cosputtered targets. The as-deposited cosputtered films at various theoretical atomic ratios [Al/(Al+Zn) at. %] showed n-type conductive behavior in spite of the N atoms exceeding that of the Al dopants, indicating that the N-related acceptors were still inactive. The crystalline structure was obviously correlated with the cosputtered AlN contents and eventually evolved into an amorphous structure for the Al-N codoped ZnO film at a theoretical Al doping level reaching 60%. With an adequate postannealing treatment, the N-related acceptors were effectively activated and the p-type ZnO conductive behavior achieved. The appearance of the Zn{sub 3}N{sub 2} phase in the x-ray diffraction pattern of the annealed Al-N codoped ZnO film provided evidence of the nitrification of zinc ions. The redshift of the shallow level transition and the apparent suppression of the oxygen-related deep level emission investigated from the photoluminescence spectrum measured at room temperature were concluded to be influenced by the activated N-related acceptors. In addition, the activation of the N acceptors denoted as N-Zn bond and the chemical bond related to the Zn{sub 3}N{sub 2} crystalline structure were also observed from the associated x-ray photoelectron spectroscopy spectra.

  17. Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

    NASA Astrophysics Data System (ADS)

    Hua, Lei; Liu, Jian-hua; Li, Song-mei; Yu, Mei; Wang, Lei; Cui, Yong-xin

    2015-03-01

    The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The anodic oxidation was performed at 25°C and a constant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the approximate ranges of 10-20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.

  18. Role of oxygen desorption during vacuum annealing in the improvement of electrical properties of aluminum doped zinc oxide films synthesized by sol gel method

    NASA Astrophysics Data System (ADS)

    Zhu, Mingwei; Huang, Hui; Gong, Jun; Sun, Chao; Jiang, Xin

    2007-08-01

    Aluminum doped zinc oxide (ZAO) films were prepared by sol gel dip-coating process. Several annealing treatments were carried out to improve the conductivity of ZAO films. The results show that the annealing temperature and the cooling rate have significant effects on the resistivity of ZAO films. A minimum resistivity of 5.97×10-3Ωcm with the transmission in visible light region above 85% can be obtained after vacuum annealing. The desorption of oxygen that is chemisorbed on the surface and at the grain boundary is thought to be responsible for the observed improvement.

  19. Chemical vapor deposition of aluminum oxide

    DOEpatents

    Gordon, Roy; Kramer, Keith; Liu, Xinye

    2000-01-01

    An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

  20. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications.

    PubMed

    Skuza, J R; Scott, D W; Mundle, R M; Pradhan, A K

    2016-01-01

    We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5-10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

  1. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

    NASA Astrophysics Data System (ADS)

    Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

    2016-02-01

    We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5-10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT.

  2. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

    PubMed Central

    Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

    2016-01-01

    We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5–10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

  3. Ultrafine nanoporous palladium-aluminum film fabricated by citric acid-assisted hot-water-treatment of aluminum-palladium alloy film

    SciTech Connect

    Harumoto, Takashi; Tamura, Yohei; Ishiguro, Takashi

    2015-01-15

    Hot-water-treatment has been adapted to fabricate ultrafine nanoporous palladium-aluminum film from aluminum-palladium alloy film. Using citric acid as a chelating agent, a precipitation of boehmite (aluminum oxide hydroxide, AlOOH) on the nanoporous palladium-aluminum film was suppressed. According to cross-sectional scanning transmission electron microscopy observations, the ligament/pore sizes of the prepared nanoporous film were considerably small (on the order of 10 nm). Since this fabrication method only requires aluminum alloy film and hot-water with chelating agent, the ultrafine nanoporous film can be prepared simply and environmentally friendly.

  4. Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films

    SciTech Connect

    Prenzel, Marina; Kortmann, Annika; Keudell, Achim von; Arcos, Teresa de los; Winter, Joerg

    2012-11-15

    Al{sub 2}O{sub 3} thin films, either amorphous or of varying degrees of crystallinity, were deposited by two-frequency radio-frequency magnetron sputtering. Film crystallinity was investigated by Fourier transform infrared spectroscopy and X-ray diffraction (XRD). X-ray photoelectron spectroscopy (XPS) was employed to determine the amount of Ar naturally trapped within the films during the deposition process. A clear correlation was found between the existence of crystalline phases, as determined by XRD, and a shift towards lower binding energy positions of the Ar2p core levels of embedded gas. The shift is due to differences in the local Al{sub 2}O{sub 3} matrix (amorphous or crystalline) of the embedded gas, thus, providing an XPS fingerprint that can be used to qualitatively determine the presence or absence of crystalline phases in very thin films.

  5. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    SciTech Connect

    Erck, R.A.; Nichols, F.A.; Dierks, J.F.

    1993-10-01

    Hydrogenated amorphous carbon films or diamondlike carbon (DLC) films were formed by ion-beam deposition of 400 eV methane (CH{sub 4}) ions on several smooth and rough ceramics, as well as on ceramics coated with a layer of Si and Ti. Adhesion was measured by the pin-pull method. Excellent adhesion was measured for smooth SiC and Si{sub 3}N{sub 4}, but adhesion of DLC to Al{sub 2}O{sub 3} and ZrO{sub 2} was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective because bonding between the DLC film and Ti was poor. The presence of surface roughness appeared to greatly increase the measured adhesion in all cases. Bulk thermodynamic calculations are not directly applicable to bonding at the interface. If the standard enthalpy of formation for reaction between CH{sub 4} and substrate is calculated assumpting a carbide or carbon phase is produced, a relation is seen between reaction enthalpy and relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. Lack of adhesion to Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for reaction with CH{sub 4} strongly positive and similar in magnitude to that for Al{sub 2}O{sub 3} and ZrO{sub 2}.

  6. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    SciTech Connect

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K.

    2013-10-14

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (T{sub s}). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10{sup −3} Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at T{sub s} of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein–Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ∼110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  7. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K.

    2013-10-01

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (Ts). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10-3 Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at Ts of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein-Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ˜110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  8. Resistive Switching Behavior in Amorphous Aluminum Oxide Film Grown by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Quan, Xiao-Tong; Zhu, Hui-Chao; Cai, Hai-Tao; Zhang, Jia-Qi; Wang, Xiao-Jiao

    2014-07-01

    The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metal-organic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin films are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and ultraviolet-visible-infrared spectroscopy, respectively. The electronic character of Ag/Al2O3/ITO structure is tested by an Agilent B1500A. The device shows a typical bipolar resistive switching behavior under the dc voltage sweep mode at room temperature. The variation ratio between HRS and LRS is larger than nearly three orders of magnitude, which indicates the good potential of this structure in future resistive random access memory (ReRAM) applications. Based on the conductive filament model, the high electric field is considered the main reason for the resistive switching according to our measurements.

  9. Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering.

    PubMed

    Kim, Minha; Jang, Yong-Jun; Jung, Ho-Sung; Song, Woochang; Kang, Hyunil; Kim, Eung Kwon; Kim, Donguk; Yi, Junsin; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were deposited on glass and polyimide substrates using radio frequency magnetron sputtering. We investigated the effects of the oxygen gas ratio on the properties of the AZO films for Cu(In,Ga)Se2 thin-film solar cell applications. The structural and optical properties of the AZO thin films were measured using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and UV-Visible-NIR spectrophotometry. The oxygen gas ratio played a crucial role in controlling the optical as well as electrical properties of the films. When oxygen gas was added into the film, the surface AZO thin films became smoother and the grains were enlarged while the preferred orientation changed from (0 0 2) to (1 0 0) plane direction of the hexagonal phase. An improvement in the transmittance of the AZO thin films was achieved with the addition of 2.5-% oxygen gas. The electrical resistivity was highly increased even for a small amount of the oxygen gas addition. PMID:27483888

  10. Improving the direct electron transfer in monolithic bioelectrodes prepared by immobilization of FDH enzyme on carbon-coated anodic aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Castro-Muñiz, Alberto; Hoshikawa, Yasuto; Komiyama, Hiroshi; Nakayama, Wataru; Itoh, Tetsuji; Kyotani, Takashi

    2016-02-01

    The present work reports the preparation of binderless carbon-coated porous films and the study of their performance as monolithic bioanodes. The films were prepared by coating anodic aluminum oxide (AAO) films with a thin layer of nitrogen-doped carbon by chemical vapor deposition. The films have cylindrical straight pores with controllable diameter and length. These monolithic films were used directly as bioelectrodes by loading the films with D-fructose dehydrogenase (FDH), an oxidoreductase enzyme that catalyzes the oxidation of D-fructose to 5-keto-D-fructose. The immobilization of the enzymes was carried out by physical adsorption in liquid phase and with an electrostatic attraction method. The latter method takes advantage of the fact that FDH is negatively charged during the catalytic oxidation of fructose. Thus the immobilization was performed under the application of a positive voltage to the CAAO film in a FDH-fructose solution in McIlvaine buffer (pH 5) at 25 ºC. As a result, the FDH modified electrodes with the latter method show much better electrochemical response than that with the conventional physical adsorption method. Due to the singular porous structure of the monolithic films, which consists of an array of straight and parallel nanochannels, it is possible to rule out the effect of the diffusion of the D-fructose into the pores. Thus the improvement in the performance upon using the electrostatic attraction method can be ascribed not only to a higher uptake, but also to a more appropriate molecule orientation of the enzyme units on the surface of the electrodes.

  11. Growth of Sputtered-Aluminum Oxide Thin Films on si (100) and si (111) Substrates with Al2O3 Buffer Layer

    NASA Astrophysics Data System (ADS)

    Lim, Wei Qiang; Shanmugan, Subramani; Devarajan, Mutharasu

    2016-03-01

    Aluminum oxide (Al2O3) thin films with Al2O3 buffer layer were deposited on Si (100) and Si (111) substrates using RF magnetron sputtering of Al2O3 target in Ar atmosphere. The synthesized films were then annealed at the temperature of 400∘C, 600∘C and 800∘C in nitrogen (N2) environment for 6h. Structural properties and surface morphology are examined by using X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscope (AFM). XRD analysis indicated that different orientation of Al2O3 were formed with different intensities due to increase in the annealing temperature. From FESEM cross-section analysis results, it is observed that the thickness of films were increased as the annealing temperature increased. EDX analysis shows that the concentration of aluminum and oxygen on both the Si substrates increased with the increase in annealing temperature. The surface roughness of the films were found to be decreased first when the annealing temperature is increased to 400∘C, yet the roughness increased when the annealing temperature is further increased to 800∘C.

  12. Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

    NASA Astrophysics Data System (ADS)

    Wang, Li-Min; Wang, Chih-Yi; Jheng, Ciao-Ren; Wu, Syu-Jhan; Sai, Chen-Kai; Lee, Ya-Ju; Chiang, Ching-Yu; Shew, Bor-Yuan

    2016-08-01

    The crystalline structure, morphology, composition, electrical transport, and optical properties of aluminum-doped zinc oxide (AZO) films are studied for applications in transparent electronics and optoelectronic devices. AZO thin films of c-axis-oriented growth and with different thickness were deposited on PET flexible plastic substrates at room temperature by rf magnetron sputtering. A larger grain size with a decreased strain ɛ value is observed in a thicker film, while changes in composition for films with different thicknesses are insignificant. Moreover, the resistivity of film decreases with increasing thickness, and the low-temperature electrical transport properties can be described by the scenario of quantum corrections to conductivity. With the room-temperature growth conditions, the resistivity of 4.5 × 10-4 Ω cm, carrier concentration of 6.4 × 1020 cm-3, and transmittance of 80 % for the 1100-nm-thick film are obtained. In addition, the optical bandgap energy decreases with increasing film thickness, which can be attributed to the bandgap renormalization and crystallite size effects.

  13. Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier

    NASA Astrophysics Data System (ADS)

    Hwang, Ji-Hyun; Kwak, Hyunmin; Kwon, Myeung Hoi

    2014-03-01

    Aluminum-induced crystallization (AIC) of amorphous silicon with an Al2O3 diffusion barrier was investigated for controlling Si crystallization and preventing layer exchange during the annealing process. An Al2O3 layer was deposited between the a-Si and the Al films (a-Si/Al2O3/Al/Glass) and was blasted with an air spray gun with alumina beads to form diffusion channels between the Si and the Al layers. During the annealing process, small grain Si x Al seeds were formed at the channels. Then, the Al2O3 diffusion barrier was restructured to close the channels and prevent further diffusion of Al atoms into the a-Si layer. A polycrystalline Si film with (111), (220) and (311) crystallization peaks in the X-ray diffraction pattern was formed by annealing at 560 °C in a conventional furnace. That film showed a p-type semiconducting behavior with good crystallinity and a large grain size of up to 14.8 µm. No layer conversion occurred between the Si and the Al layers, which had been the fundamental obstacle to the applications in the crystallization of a-Si films by using the AIC method.

  14. Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

    PubMed

    Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

    2015-10-13

    Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance. PMID:26393523

  15. Frictional behavior and adhesion of Ag and Au films applied to aluminum oxide by oxygen-ion assisted Screen Cage Ion Plating (SCIP)

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis; Sliney, Harold E.

    1994-01-01

    A modified dc-diode ion plating system, by utilizing a metallic screen cage as a cathode, is introduced for coating nonconductors such as ceramics. Screen cage ion plating (SCIP) is used to apply Ag and Au lubricating films on aluminum oxide surfaces. This process has excellent ability to coat around corners to produce three-dimensional coverage of the substrate. A dramatic increase in adhesion is achieved when plating is performed in a reactive 50 percent O2 - 50 percent Ar glow discharge compared to the adhesion when plating is performed in 100 percent Ar. The presence of oxygen ion assistance contributes to the excellent adhesion as measured in a pull-type adhesion tester. The Ag and Au film adhesion is significantly increased (less than 70MPa) and generally exceeds the cohesion of the substrate such that portions of the alumina are pulled out.

  16. Optically stimulated luminescence (OSL) of carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) for film dosimetry in radiotherapy

    SciTech Connect

    Schembri, V.; Heijmen, B. J. M.

    2007-06-15

    Introduction and Purpose: Conventional x-ray films and radiochromic films have inherent challenges for high precision radiotherapy dosimetry. Here we have investigated basic characteristics of optically stimulated luminescence (OSL) of irradiated films containing carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) for dosimetry in therapeutic photon and electron beams. Materials and Methods: The OSL films consist of a polystyrene sheet, with a top layer of a mixture of single crystals of Al{sub 2}O{sub 3}:C, ground into a powder, and a polyester base. The total thickness of the films is 0.3 mm. Measurements have been performed in a water equivalent phantom, using 4, 6, 10, and 18 MV photon beams, and 6-22 MeV electron beams. The studies include assessment of the film response (acquired OSL signal/delivered dose) on delivered dose (linearity), dose rate (1-6 Gy/min), beam quality, field size and depth (6 MV, ranges 4x4-30x30 cm{sup 2}, d{sub max}-35 cm). Doses have been derived from ionization chamber measurements. OSL films have also been compared with conventional x-ray and GafChromic films for dosimetry outside the high dose area, with a high proportion of low dose scattered photons. In total, 787 OSL films have been irradiated. Results: Overall, the OSL response for electron beams was 3.6% lower than for photon beams. Differences between the various electron beam energies were not significant. The 6 and 18 MV photon beams differed in response by 4%. No response dependencies on dose rate were observed. For the 6 MV beam, the field size and depth dependencies of the OSL response were within {+-}2.5%. The observed inter-film response variation for films irradiated with the same dose varied from 1% to 3.2% (1 SD), depending on the measurement day. At a depth of 20 cm, 5 cm outside the 20x20 cm{sup 2} 6 and 18 MV beams, an over response of 17% was observed. In contrast to GafChromic and conventional x-ray films, the response of the Al{sub 2}O{sub 3}:C films is linear

  17. Dry lubricant films for aluminum forming.

    SciTech Connect

    Wei, J.; Erdemir, A.; Fenske, G. R.

    1999-03-30

    During metal forming process, lubricants are crucial to prevent direct contact, adhesion, transfer and scuffing of workpiece materials and tools. Boric acid films can be firmly adhered to the clean aluminum surfaces by spraying their methanol solutions and provide extremely low friction coefficient (about 0.04). The cohesion strengths of the bonded films vary with the types of aluminum alloys (6061, 6111 and 5754). The sheet metal forming tests indicate that boric acid films and the combined films of boric acid and mineral oil can create larger strains than the commercial liquid and solid lubricants, showing that they possess excellent lubricities for aluminum forming. SEM analyses indicate that boric acid dry films separate the workpiece and die materials, and prevent their direct contact and preserve their surface qualities. Since boric acid is non-toxic and easily removed by water, it can be expected that boric acid films are environmentally friendly, cost effective and very efficient lubricants for sheet aluminum cold forming.

  18. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    NASA Astrophysics Data System (ADS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-09-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al3+ films. The electrochromic performance of the films were evaluated by means of UV-vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni3+/Ni2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film.

  19. X-ray photoelectron spectroscopy study of para-substituted benzoic acids chemisorbed to aluminum oxide thin films

    SciTech Connect

    Kreil, Justin; Ellingsworth, Edward; Szulczewski, Greg

    2013-11-15

    A series of para-substituted, halogenated (F, Cl, Br, and I) benzoic acid monolayers were prepared on the native oxide of aluminum surfaces by solution self-assembly and spin-coating techniques. The monolayers were characterized by x-ray photoelectron spectroscopy (XPS) and water contact angles. Several general trends are apparent. First, the polarity of the solvent is critical to monolayer formation. Protic polar solvents produced low coverage monolayers; in contrast, nonpolar solvents produced higher coverage monolayers. Second, solution deposition yields a higher surface coverage than spin coating. Third, the thickness of the monolayers determined from XPS suggests the plane of the aromatic ring is perpendicular to the surface with the carboxylate functional group most likely binding in a bidentate chelating geometry. Fourth, the saturation coverage (∼2.7 × 10{sup 14} molecules cm{sup −2}) is independent of the para-substituent.

  20. Fabrication of electrodes on the aluminum doped zinc oxide thin films using an ultraviolet laser direct-patterning technology

    NASA Astrophysics Data System (ADS)

    Hsiao, Wen-Tse; Tseng, Shih-Feng; Kuo, Chao-Hui; Huang, Kuo-Cheng; Chiang, Donyau; Yao, Pin-Chiun; Chen, Ming-Fei

    Because transparent conductive oxide (TCO) thin films have more than 80% transmittance in visible spectrum, and high electrical conductivity, the TCO films are widely applied to flat panel displays and solar cells as transparent electrode materials. This study aims to develop a direct patterning technology on ZnO:Al (AZO) thin films by a diode-pumped solid state ultraviolet laser. The electrode patterns with array structures on AZO thin films were generated by a high-speed galvanometric scanning system. The optoelectronic properties of a patterned electrode have strong relation with the laser pulse frequency, the scan speed, and the patterning time. The surface morphology and roughness of patterned electrode were measured by three dimension confocal microscope and field emission scanning electron microscope, respectively. The resistivity of AZO thin films before and after laser patterning was measured by a four point probe instrument. The optical transmittance was recorded by a UV/VIS/NIR spectrophotometer. The experimental results indicated that the edge line width and depth decreased with increasing the scan speed. After the array patterns structure were formed by laser dry etching, the roughness Ra values of patterned area increased from 0.06 μm to 0.16 μm. These transmittances of patterned structure from 400 nm to 800 nm wavelengths averagely reached to 82%. The measured results of electrical conductively revealed that the resistivity gradually increased with increasing the pulse repetition frequency. In addition, surface morphologic examination on the straight lines, corners, and etched regions of patterned films revealed no micro-cracks observed which meant the patterned surface had a better surface quality.

  1. Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

    SciTech Connect

    Deng, Chunqing Otto, M.; Lupascu, A.

    2014-01-27

    We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

  2. Oxidation kinetics of aluminum diboride

    NASA Astrophysics Data System (ADS)

    Whittaker, Michael L.; Sohn, H. Y.; Cutler, Raymond A.

    2013-11-01

    The oxidation characteristics of aluminum diboride (AlB2) and a physical mixture of its constituent elements (Al+2B) were studied in dry air and pure oxygen using thermal gravimetric analysis to obtain non-mechanistic kinetic parameters. Heating in air at a constant linear heating rate of 10 °C/min showed a marked difference between Al+2B and AlB2 in the onset of oxidation and final conversion fraction, with AlB2 beginning to oxidize at higher temperatures but reaching nearly complete conversion by 1500 °C. Kinetic parameters were obtained in both air and oxygen using a model-free isothermal method at temperatures between 500 and 1000 °C. Activation energies were found to decrease, in general, with increasing conversion for AlB2 and Al+2B in both air and oxygen. AlB2 exhibited O2-pressure-independent oxidation behavior at low conversions, while the activation energies of Al+2B were higher in O2 than in air. Differences in the composition and morphology between oxidized Al+2B and AlB2 suggested that Al2O3-B2O3 interactions slowed Al+2B oxidation by converting Al2O3 on aluminum particles into a Al4B2O9 shell, while the same Al4B2O9 developed a needle-like morphology in AlB2 that reduced oxygen diffusion distances and increased conversion. The model-free kinetic analysis was critical for interpreting the complex, multistep oxidation behavior for which a single mechanism could not be assigned. At low temperatures, moisture increased the oxidation rate of Al+2B and AlB2, but both appear to be resistant to oxidation in cool, dry environments.

  3. Oxidation dynamics of aluminum nanorods

    SciTech Connect

    Li, Ying; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2015-02-23

    Aluminum nanorods (Al-NRs) are promising fuels for pyrotechnics due to the high contact areas with oxidizers, but their oxidation mechanisms are largely unknown. Here, reactive molecular dynamics simulations are performed to study thermally initiated burning of oxide-coated Al-NRs with different diameters (D = 26, 36, and 46 nm) in oxygen environment. We found that thinner Al-NRs burn faster due to the larger surface-to-volume ratio. The reaction initiates with the dissolution of the alumina shell into the molten Al core to generate heat. This is followed by the incorporation of environmental oxygen atoms into the resulting Al-rich shell, thereby accelerating the heat release. These results reveal an unexpectedly active role of the alumina shell as a “nanoreactor” for oxidation.

  4. Oxidation dynamics of aluminum nanorods

    NASA Astrophysics Data System (ADS)

    Li, Ying; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2015-02-01

    Aluminum nanorods (Al-NRs) are promising fuels for pyrotechnics due to the high contact areas with oxidizers, but their oxidation mechanisms are largely unknown. Here, reactive molecular dynamics simulations are performed to study thermally initiated burning of oxide-coated Al-NRs with different diameters (D = 26, 36, and 46 nm) in oxygen environment. We found that thinner Al-NRs burn faster due to the larger surface-to-volume ratio. The reaction initiates with the dissolution of the alumina shell into the molten Al core to generate heat. This is followed by the incorporation of environmental oxygen atoms into the resulting Al-rich shell, thereby accelerating the heat release. These results reveal an unexpectedly active role of the alumina shell as a "nanoreactor" for oxidation.

  5. Effect of Pore Size and Film Thickness on Gold-Coated Nanoporous Anodic Aluminum Oxide Substrates for Surface-Enhanced Raman Scattering Sensor

    PubMed Central

    Kassu, Aschalew; Farley, Carlton; Sharma, Anup; Kim, Wonkyu; Guo, Junpeng

    2015-01-01

    A sensitive surface enhanced Raman scattering chemical sensor is demonstrated by using inexpensive gold-coated nanoporous anodic aluminum oxide substrates. To optimize the performance of the substrates for sensing by the Surface-enhanced Raman scattering (SERS) technique, the size of the nanopores is varied from 18 nm to 150 nm and the gold film thickness is varied from 30 nm to 120 nm. The sensitivity of gold-coated nanoporous surface enhanced Raman scattering sensor is characterized by detecting low concentrations of Rhodamine 6G laser dye molecules. The morphology of the SERS substrates is characterized by atomic force microscopy. Optical properties of the nanoporous SERS substrates including transmittance, reflectance, and absorbance are also investigated. Relative signal enhancement is plotted for a range of substrate parameters and a detection limit of 10−6 M is established. PMID:26633402

  6. Low-temperature film growth of the oxides of zinc, aluminum, and vanadium (and related systems, oxides of gold and germanium, nitrides of aluminum and tungsten) by reactive sputter deposition. Final report, 1 July 1984-31 December 1987

    SciTech Connect

    Aita, C.R.

    1988-02-01

    The research involved investigation of process-parameter growth environment film property relationships for various binary oxide and nitride films grown on unheated substrates by reactive sputter deposition using an elemental target. In-situ optical-emission spectroscopy and glow-discharge mass spectrometry were used to determine gas-phase species in the plasma volume. A battery of techniques were used to characterize (post-deposition) film crystallography, chemistry, microstructure, electrical resistivity, and optical behavior.

  7. Influence of composition and processing parameters on the properties of solution-processed aluminum phosphate oxide (AlPO) thin films

    NASA Astrophysics Data System (ADS)

    Norelli, Kevin M.; Plassmeyer, Paul N.; Woods, Keenan N.; Glassy, Benjamin A.; Knutson, Christopher C.; Beekman, Matt; Page, Catherine J.

    2016-05-01

    The effects of precursor solution concentration, composition, and spin-processing parameters on the thickness and electrical properties of ultra-smooth aluminum oxide phosphate (Al2O3-3x(PO4)2x or "AlPO") thin films prepared using aqueous solutions are reported. Compositions were verified by electron probe micro-analysis and range from Al2O1.5(PO4) to AlPO4 (x = P:Al from 0.5 to 1.0). Film thicknesses were determined using X-ray reflectivity measurements and were found to depend systematically on solution concentration, P:Al ratio, and spin-speed. Metal-insulator-semiconductor devices were fabricated to determine electrical properties as a function of composition. As the P:Al ratio increased from 0.5 to 1.0, the dielectric constant decreased from 6.0 to 4.6, leakage currents increased from 0.45 to 65 nA cm-2 at 1 MV cm-1 and dielectric breakdown (defined as leakage currents >10 μA cm-2) decreased from 9.74 to 2.84 MV cm-1. These results establish composition, concentration, and spin-speed for the production of AlPO films with targeted thicknesses and electrical properties.

  8. Low temperature near infrared plasmonic gas sensing of gallium and aluminum doped zinc oxide thin films from colloidal inks (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Sturaro, Marco; Della Gaspera, Enrico; Martucci, Alessandro; Guglielmi, Massimo

    2015-08-01

    We obtained Gallium-doped and Aluminum-doped Zinc Oxide nanocrystals by non aqueous colloidal heat-up synthesis. These nanocrystals are transparent in the visible range but exhibit localized surface plasmon resonances (LSPRs) in the near IR range, tunable and shiftable with dopant concentration (up to 20% mol nominal). GZO and AZO inks can be deposited by spin coating, dip coating or spray coating on glass or silicon, leading to uniform and high optical quality thin films. To enhance absorbtion in the infrared region, samples can be annealed in inert or reductant atmosphere (N2/Argon or H2 in Argon) resulting in plasmon intensity enhancement due to oxygen vacancies and conduction band electrons density increment. Then IR plasmon has been exploited for gas sensing application, according to the plasmon shifting for carrier density variations, due to electrons injection or removal by the target gas/sample chemical interactions. To obtain a functional sensor at low temperature, another treatment was investigated, involving surfanctant removal by dipping deposited films in a solution of organic acid, tipically oxalic acid in acetonitrile; such process could pave the way to obtain similar sensors deposited on plastics. Finally, GZO and AZO thin films proved sensibility to H2 and NOx, and in particular circumstances also to CO, from room temperature to 200°C. Sensibility behavior for different dopant concentration and temperture was investigated both in IR plasmon wavelengths (~2400 nm) and zinc oxide band gap (~370 nm). An enhancement in sensitivity to H2 is obtained by adding Pt nanoparticles, exploiting catalytic properties of Platinum for hydrogen splitting.

  9. Resistive switching of aluminum oxide for flexible memory

    SciTech Connect

    Kim, Sungho; Choi, Yang-Kyu

    2008-06-02

    The unipolar resistive switching of the Al/Al{sub x}O{sub y}/Al structure is investigated for nonvolatile memory. Following the production of aluminum oxide film (Al{sub x}O{sub y}) by plasma oxidation, a high ratio of on-state and off-state currents ({>=}10{sup 4}) is achieved, and characteristics of switching endurance are reported. Due to the good ductility of aluminum, the performance of resistive switching on a flexible substrate is not degraded by severe substrate bending. The low process temperature of the plasma oxidation process is advantageous for the fabrication of flexible electronic devices and modern interconnection processes.

  10. Simulated Desorption of Aluminum and Oxide Covered Aluminum

    NASA Astrophysics Data System (ADS)

    Helvajian, Henry

    1998-03-01

    There is evidence that laser or electron stimulated nonthermal desorption from aluminum can proceed through plasmon excitation processes. Arakawa et al. observed this phenomenon with Al films and Kim et al. observed it with direct laser irradiation. (E.T. Arakawa, I. Lee and T.A. Callcott in Laser Ablation, J.C. Miller and R.F. Haglund Eds., Springer-Verlag, NY, 82 (1991).; H. S. Kim and H. Helvjian, J. Phys. Chem. 95, 6623 (1991).) Dreyfus et al. found nonthermal Al neutral species from laser irradiation of Al_2O_3, Schildbach et al. measured nonthermal Al ions from a well characterized sapphire (1120) sample, and Pedraza et al. showed that for laser irradiation of both alumina and sapphire there is a change in the degree of oxidation of the surface Al.(R.W. Dreyfus, R. Kelly and R.E. Walkup, Appl. Phys. Lett. 49, 1478 (1986);M.A. Schildbach and A.V. Hamza, Phys. Rev. B. 45, 6197 (1992); Pedraza et al., AIP Proc., Vol. 288 (1993) pg. 329.) These experiments show that oxygen on Al does not quench the nonthermal desorption. We will present measurements of the Al yield and K. E. w.r.t. oxygen coverage and laser fluence. This stimulated desorption work has environmental relevance to the storage of oxidized Al clad nuclear fuel rods.

  11. Oxide film microstructure: the link between surface preparation processes and strength/durability of adhesively bonded aluminum. Final report

    SciTech Connect

    Hsia, K. Jimmy; Pearlstein, Arne J.; Scheeline, Alexander; Shang, Jian Ku

    2000-11-30

    Strength and durability of adhesive bonding of aluminum alloys structures are intrinsically determined by the surface microstructures and interfacial failure micromechanisms. The current project presents a multidisciplinary approach to addressing critical issues controlling the strength and durability of adhesive bonds of aluminum alloys. Three main thrust areas have been pursued: surface treatment technology development to achieve desirable surface microstructures; relationship between surface structure and properties of adhesive bonds; and failure mechanisms of adhesively bonded components.

  12. Oxidation kinetics of aluminum diboride

    SciTech Connect

    Whittaker, Michael L.; Sohn, H.Y.; Cutler, Raymond A.

    2013-11-15

    The oxidation characteristics of aluminum diboride (AlB{sub 2}) and a physical mixture of its constituent elements (Al+2B) were studied in dry air and pure oxygen using thermal gravimetric analysis to obtain non-mechanistic kinetic parameters. Heating in air at a constant linear heating rate of 10 °C/min showed a marked difference between Al+2B and AlB{sub 2} in the onset of oxidation and final conversion fraction, with AlB{sub 2} beginning to oxidize at higher temperatures but reaching nearly complete conversion by 1500 °C. Kinetic parameters were obtained in both air and oxygen using a model-free isothermal method at temperatures between 500 and 1000 °C. Activation energies were found to decrease, in general, with increasing conversion for AlB{sub 2} and Al+2B in both air and oxygen. AlB{sub 2} exhibited O{sub 2}-pressure-independent oxidation behavior at low conversions, while the activation energies of Al+2B were higher in O{sub 2} than in air. Differences in the composition and morphology between oxidized Al+2B and AlB{sub 2} suggested that Al{sub 2}O{sub 3}–B{sub 2}O{sub 3} interactions slowed Al+2B oxidation by converting Al{sub 2}O{sub 3} on aluminum particles into a Al{sub 4}B{sub 2}O{sub 9} shell, while the same Al{sub 4}B{sub 2}O{sub 9} developed a needle-like morphology in AlB{sub 2} that reduced oxygen diffusion distances and increased conversion. The model-free kinetic analysis was critical for interpreting the complex, multistep oxidation behavior for which a single mechanism could not be assigned. At low temperatures, moisture increased the oxidation rate of Al+2B and AlB{sub 2}, but both appear to be resistant to oxidation in cool, dry environments. - Graphical abstract: Isothermal kinetic data for AlB{sub 2} in air, showing a constantly decreasing activation energy with increasing conversion. Model-free analysis allowed for the calculation of global kinetic parameters despite many simultaneous mechanisms occurring concurrently. (a) Time

  13. Vanadium oxides on aluminum oxide supports. 1. Surface termination and reducibility of vanadia films on alpha-Al2O3(0001).

    PubMed

    Todorova, Tanya K; Ganduglia-Pirovano, M Veronica; Sauer, Joachim

    2005-12-15

    Using density functional theory and statistical thermodynamics, we obtained the phase diagram of thin VnOm films of varying thickness (approximately 2-6 A, 1-6 vanadium layers) supported on alpha-Al2O3(0001). Depending on the temperature, oxygen pressure, and vanadium concentration, films with different thickness and termination may form. In ultrahigh vacuum (UHV), at room temperature and for low vanadium concentrations, an ultrathin (1 x 1) O=V-terminated film is most stable. As more vanadium is supplied, the thickest possible films form. Their structures and terminations correspond to previous findings for the (0001) surface of bulk V2O3 [Kresse et al., Surf. Sci. 2004, 555, 118]. The presence of surface vanadyl (O=V) groups is a prevalent feature. They are stable up to at least 800 K in UHV. Vanadyl oxygen atoms induce a V(2p) core-level shift of about 2 eV on the surface V atoms. The reducibility of the supported films is characterized by the energy of oxygen defect formation. For the stable structures, the results vary between 4.11 and 3.59 eV per 1/2O2. In contrast, oxygen removal from the V2O5(001) surface is much easier (1.93 eV). This provides a possible explanation for the lower catalytic activity of vanadium oxides supported on alumina compared to that of crystalline vanadia particles. PMID:16375327

  14. Structure of triglycine sulfate embedded in porous aluminum oxide

    NASA Astrophysics Data System (ADS)

    Golitsyna, O. M.; Drozhdin, S. N.; Zanin, I. E.; Gridnev, A. E.

    2012-11-01

    The X-ray diffraction investigations have been performed for nanocomposite materials based on porous aluminum oxide with inclusions of TGS and TGS, which is doped with L,α-alanine (ATGS). The presence of the TGS and ATGS textures in pores of Al2O3 films has been found. It has been established that, under conditions of confined geometry, the broadening of diffraction maxima of the reflection is caused by the size effect. The temperature dependences of the order parameter for porous aluminum oxide with TGS inclusions have been constructed.

  15. Platinum-Enhanced Electron Transfer and Surface Passivation through Ultrathin Film Aluminum Oxide (Al₂O₃) on Si(111)-CH₃ Photoelectrodes.

    PubMed

    Kim, Hark Jin; Kearney, Kara L; Le, Luc H; Pekarek, Ryan T; Rose, Michael J

    2015-04-29

    We report the preparation, stability, and utility of Si(111)-CH3 photoelectrodes protected with thin films of aluminum oxide (Al2O3) prepared by atomic layer deposition (ALD). The photoelectrodes have been characterized by X-ray photoelectron spectroscopy (XPS), photoelectrochemistry (Fc in MeCN, Fc-OH in H2O), electrochemical impedance spectroscopy (EIS), and cyclic voltammetry (CV) simulation. XPS analysis of the growing Al2O3 layer affords both the thickness, and information regarding two-dimensional versus three-dimensional mode of growth. Impedance measurements on Si(111)|CH3|Al2O3 devices reveal that the nascent films (5-30 Å) exhibit significant capacitance, which is attenuated upon surpassing the bulk threshold (∼30 Å). The Al2O3 layer provides enhanced photoelectrochemical (PEC) stability evidenced by an increase in the anodic window of operation in MeCN (up to +0.5 V vs Ag) and enhanced stability in aqueous electrolyte (up to +0.2 V vs Ag). XPS analysis before and after PEC confirms the Al2O3 layer is persistent and prevents surface corrosion (SiOx). Sweep-rate dependent CVs in MeCN at varying thicknesses exhibit a trend of increasingly broad features, characteristic of slow electron transport kinetics. Simulations were modeled as slow electron transfer through a partially resistive and electroactive Al2O3 layer. Lastly, we find that the Al2O3 ultrathin film serves as a support for the ALD deposition of Pt nanoparticles (d ≈ 8 nm) that enhance electron transfer through the Al2O3 layer. Surface recombination velocity (SRV) measurements on the assembled Si(111)|CH3|Al2O3-15 device affords an S value of 4170 cm s(-1) (τ = 4.2 μs) comparable to the bare Si(111)-CH3 surface (3950 cm s(-1); τ = 4.4 μs). Overall, the results indicate that high electronic quality and low surface defect densities can be retained throughout a multistep assembly of an integrated and passivated semiconductor|thin-film|metal device. PMID:25880534

  16. Oxidation and melting of aluminum nanopowders.

    PubMed

    Trunov, Mikhaylo A; Umbrajkar, Swati M; Schoenitz, Mirko; Mang, Joseph T; Dreizin, Edward L

    2006-07-01

    Recently, nanometer-sized aluminum powders became available commercially, and their use as potential additives to propellants, explosives, and pyrotechnics has attracted significant interest. It has been suggested that very low melting temperatures are expected for nanosized aluminum powders and that such low melting temperatures could accelerate oxidation and trigger ignition much earlier than for regular, micron-sized aluminum powders. The objective of this work was to investigate experimentally the melting and oxidation behavior of nanosized aluminum powders. Powder samples with three different nominal sizes of 44, 80, and 121 nm were provided by Nanotechnologies Inc. The particle size distributions were measured using small-angle X-ray scattering. Melting was studied by differential scanning calorimetry where the powders were heated from room temperature to 750 degrees C in an argon environment. Thermogravimetric analysis was used to measure the mass increase indicative of oxidation while the powders were heated in an oxygen-argon gas mixture. The measured melting curves were compared to those computed using the experimental particle size distributions and thermodynamic models describing the melting temperature and enthalpy as functions of the particle size. The melting behavior predicted by different models correlated with the experimental observations only qualitatively. Characteristic stepwise oxidation was observed for all studied nanopowders. The observed oxidation behavior was well interpreted considering the recently established kinetics of oxidation of micron-sized aluminum powders. No correlation was found between the melting and oxidation of aluminum nanopowders. PMID:16805619

  17. Aluminum-Oxide Temperatures on the Mark VB, VE, VR, 15, and Mark 25 Assemblies

    SciTech Connect

    Aleman, S.E.

    2001-07-17

    The task was to compute the maximum aluminum-oxide and oxide-coolant temperatures of assemblies cladded in 99+ percent aluminum. The assemblies considered were the Mark VB, VE, V5, 15 and 25. These assemblies consist of nested slug columns with individual uranium slugs cladded in aluminum cans. The CREDIT code was modified to calculate the oxide film thickness and the aluminum-oxide temperature at each axial increment. This information in this report will be used to evaluate the potential for cladding corrosion of the Mark 25 assembly.

  18. Aluminum-Oxide Temperatures on the Mark VB, VE, VR, 15, and Mark 25 Assemblies

    SciTech Connect

    Aleman, S.E.

    2001-07-17

    The task was to compute the maximum aluminum-oxide and oxide-coolant temperatures of assemblies cladded in 99 plus percent aluminum. The assemblies considered were the Mark VB, VE, V5, 15 and 25. These assemblies consist of nested slug columns with individual uranium slugs cladded in aluminum cans. The CREDIT code was modified to calculate the oxide film thickness and the aluminum-oxide temperature at each axial increment. The information in this report will be used to evaluate the potential for cladding corrosion of the Mark 25 assembly.

  19. Substrate biasing effect on the physical properties of reactive RF-magnetron-sputtered aluminum oxide dielectric films on ITO glasses.

    PubMed

    Liang, Ling Yan; Cao, Hong Tao; Liu, Quan; Jiang, Ke Min; Liu, Zhi Min; Zhuge, Fei; Deng, Fu Ling

    2014-02-26

    High dielectric constant (high-k) Al2O3 thin films were prepared on ITO glasses by reactive RF-magnetron sputtering at room temperature. The effect of substrate bias on the subband structural, morphological, electrode/Al2O3 interfacial and electrical properties of the Al2O3 films is systematically investigated. An optical method based on spectroscopic ellipsometry measurement and modeling is adopted to probe the subband electronic structure, which facilitates us to vividly understand the band-tail and deep-level (4.8-5.0 eV above the valence band maximum) trap states. Well-selected substrate biases can suppress both the trap states due to promoted migration of sputtered particles, which optimizes the leakage current density, breakdown strength, and quadratic voltage coefficient of capacitance. Moreover, high porosity in the unbiased Al2O3 film is considered to induce the absorption of atmospheric moisture and the consequent occurrence of electrolysis reactions at electrode/Al2O3 interface, as a result ruining the electrical properties. PMID:24490685

  20. Improved performance of dye-sensitized solar cells with novel conjugated organic dye using aluminum oxide-coated nanoporous titanium oxide films

    NASA Astrophysics Data System (ADS)

    Jo, Hyo Jeong; Nam, Jung Eun; Kim, Dae-Hwan; Kang, Jin-Kyu

    2014-03-01

    This work introduces the TiO2/dye/electrolyte interface in the recombination and offers an interface treatment method using solution process for dye-sensitized solar cells (DSSCs). Solution-processed ultra-thin metal oxides introduce to treat the surface of mesoporous TiO2 to reduce the defect density and improve the electronic quality. Among the metal oxides, an Al2O3 barrier is incorporated into DSSCs as a carrier-recombination blocking layer. In all instances, the short-circuit current density increase and the dark current is suppressed after Al2O3 deposition. The impact of the Al2O3 barriers is also studied in devices employing different dyes. To compare the behavior of metal-free organic dyes and Ru dyes when Al2O3 barrier layers are involved, the charge transfer between the dye and TiO2 electrodes, associated with interfacial electron injection, is investigated by Raman spectroscopy. The metal-free organic dye had a high molar extinction coefficient and better adsorption properties compare to Ru dye, which resulted in higher charge-collection efficiency. To verify the strategy, the DSSCs photovoltaic performances containing these dyes are compared using their current-voltage curves. Electrochemical impedance spectroscopy (EIS), Intensity Modulated Photocurrent Spectroscopy (IMPS), and Intensity Modulated photoVoltage Spectroscopy (IMVS) were used to further investigate the kinetics process of the TiO2 film electrodes.

  1. Stabilized chromium oxide film

    DOEpatents

    Nyaiesh, A.R.; Garwin, E.L.

    1986-08-04

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  2. Stabilized chromium oxide film

    DOEpatents

    Garwin, Edward L.; Nyaiesh, Ali R.

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  3. Characterization of phosphate films on aluminum surfaces

    SciTech Connect

    Cheng, B.; Ramamurthy, S.; McIntyre, N.S.

    1997-08-01

    A thin layer of phosphate conversion coating was formed on pure aluminum in a commercial zinc-manganese phosphating bath. A number of surface analytical techniques were used to characterize the phosphate thin films formed after immersion times ranging from 30 s to 10 min. The coating contained mainly a crystalline structure with dispersed micrometer-scale cavities. The major constituents of the phosphate film were zinc, phosphorus, and oxygen; a small amount of manganese was also detected. Based on these results, a three-stage mechanism was proposed for the formation and the growth of phosphate conversion coatings on aluminum. Electrochemical impedance spectroscopy was used to evaluate the corrosion performance of phosphated and uncoated aluminum samples in 0.50 M Na{sub 2}SO{sub 4} and 0.10 M H{sub 2}SO{sub 4} solutions. Both types of samples exhibited a passive state in the neutral solution and general corrosion behavior in the acid solution.

  4. One-pot synthesis of polypyrrole film on an aluminum oxide layer by electropolymerization in the presence of ammonium borodisalicylate in acetonitrile

    NASA Astrophysics Data System (ADS)

    Toita, Sadamu; Inoue, Kenzo

    This paper describes how one-pot preparation of polypyrrole (PPy) on Al 2O 3 layer in an aluminum solid capacitor could be achieved by electropolymerization of pyrrole (Py) in acetonitrile with small amounts of water, using ammonium borodisalicylate (ABS) as a new electrolyte. The effects of monomer and electrolyte concentrations, current density, and polymerization temperature on the PPy formation on Al 2O 3 layer in aluminum solid are also discussed. Polymerization occurred smoothly to give PPy on the Al 2O 3 layer under the following conditions: [ammonium borodisalicylate] = 0.02 M, [Py] = 0.1 M, and polymerization temperature = -42 °C, current density = 10 mA cm -2. The normalized capacitance, the C p/ C 0 value of capacitor fabricated, reached more than 0.9, indicating that the porosity and surface of the Al 2O 3 layer are filled up and covered with PPy. The Raman spectra of the PPy film showed that the peak assignable to C dbnd C backbone stretching shifted to a lower wave number of 1585 cm -1. This indicates formation of the film with well-conjugated C dbnd C backbone. The SEM micrograph of PPy on Al 2O 3 layer showed a closely packed globular morphology. These results indicate that the new electrolyte, ABS, has an excellent ability to form PPy film directly on Al 2O 3 surface by electropolymerization.

  5. Formulation and method for preparing gels comprising hydrous aluminum oxide

    SciTech Connect

    Collins, Jack L.

    2014-06-17

    Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent.

  6. Synthesis and characterization of nanoporous anodic oxide film on aluminum in H3PO4 + KMnO4 electrolyte mixture at different anodization conditions

    NASA Astrophysics Data System (ADS)

    Verma, Naveen; Jindal, Jitender; Singh, Krishan Chander; Mari, Bernabe

    2016-04-01

    The micro structural properties of nanoporous anodic oxide film formed in H3PO4 were highly influenced by addition of a low concentration of KMnO4 (0.0005 M) in 1 M H3PO4 solution. The KMnO4 as additive enhanced the growth rate of oxide film formation as well as thickness of pore walls. Furthermore the growth rate was found increased with increase in applied current density. The increase in temperature and lack of stirring during anodization causes the thinness of pore wall which leads to increase in pore volume. With the decrease in concentration of H3PO4 in anodizing electrolyte from 1M to 0.3 M, keeping all other conditions constant, the decrease in porosity was observed. This might be due to the dissolution of aluminium oxide film in highly concentrated acidic solution.

  7. Influence of doping with third group oxides on properties of zinc oxide thin films

    SciTech Connect

    Palimar, Sowmya Bangera, Kasturi V.; Shivakumar, G. K.

    2013-03-15

    The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10{sup 3} {Omega}{sup -1} cm{sup -1}. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.

  8. PTFE-ALUMINUM films serve as neutral density filters

    NASA Technical Reports Server (NTRS)

    Burks, H. D.

    1966-01-01

    Polytetrafluoroethylene /PTFE/ films coated with aluminum films act as neutral density filters in the wavelength range 0.3 to 2.1 microns. These filters are effective in the calibration of photometric systems.

  9. Specific features of aluminum nanoparticle water and wet air oxidation

    SciTech Connect

    Lozhkomoev, Aleksandr S. Glazkova, Elena A. Svarovskaya, Natalia V. Bakina, Olga V. Kazantsev, Sergey O. Lerner, Marat I.

    2015-10-27

    The oxidation processes of the electrically exploded aluminum nanopowders in water and in wet air are examined in the paper. The morphology of the intermediate reaction products of aluminum oxidation has been studied using the transmission electron microscopy. It was shown that the aluminum nanopowder water oxidation causes the formation of the hollow spheres with mesoporous boehmite nanosheets coating. The wedge-like bayerite particles are formed during aluminum nanopowder wet air oxidation.

  10. Specific features of aluminum nanoparticle water and wet air oxidation

    NASA Astrophysics Data System (ADS)

    Lozhkomoev, Aleksandr S.; Glazkova, Elena A.; Svarovskaya, Natalia V.; Bakina, Olga V.; Kazantsev, Sergey O.; Lerner, Marat I.

    2015-10-01

    The oxidation processes of the electrically exploded aluminum nanopowders in water and in wet air are examined in the paper. The morphology of the intermediate reaction products of aluminum oxidation has been studied using the transmission electron microscopy. It was shown that the aluminum nanopowder water oxidation causes the formation of the hollow spheres with mesoporous boehmite nanosheets coating. The wedge-like bayerite particles are formed during aluminum nanopowder wet air oxidation.

  11. Laser reflection from oxide-coated aluminum

    NASA Technical Reports Server (NTRS)

    Williams, M. D.

    1982-01-01

    The theory of reflection from an oxide-coated metal is combined with experimentally measured parameters of aluminum to produce useful amplitude and phase shift information applicable to the concentration and direction of laser light. Amplitude and phase are plotted vs angle of incidence for several important laser wavelengths in the near UV, visible, and IR spectral regions.

  12. Nanoscale aluminum concaves for light-trapping in organic thin-films

    NASA Astrophysics Data System (ADS)

    Goszczak, Arkadiusz Jarosław; Adam, Jost; Cielecki, Paweł Piotr; Fiutowski, Jacek; Rubahn, Horst-Günter; Madsen, Morten

    2016-07-01

    Anodic aluminum oxide (AAO) templates, fabricated from oxalic acid and phosphoric acid, lead to non-periodic nanoscale concave structures in their underlying aluminum layer, which are investigated for their field-enhancement properties by applying a thin-film polymer coating based laser ablation technique. Local ablation spots, corresponding to field enhancement on the ridge edges of the aluminum concave nanostructures, are observed in surface-covering polymer films, and confirmed with FDTD studies. The field enhancement leads to improved light absorption in the applied polymer layers, which may be used as an efficient method for enhancing the power conversion efficiency of organic solar cells.

  13. Aluminum doped zinc oxide for organic photovoltaics

    SciTech Connect

    Murdoch, G. B.; Hinds, S.; Sargent, E. H.; Tsang, S. W.; Mordoukhovski, L.; Lu, Z. H.

    2009-05-25

    Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.

  14. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  15. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  16. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  17. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  18. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  19. The preparation and properties of aluminum nitride films

    NASA Technical Reports Server (NTRS)

    Chu, T. L.; Kelm, R. W., Jr.

    1975-01-01

    Aluminum nitride films have been deposited on silicon substrates at 800-1200 C by the pyrolysis of an aluminum trichloride-ammonia complex, AlCl3.3NH3, in a gas flow system. The deposit was transparent, tightly adherent to the substrate, and was confirmed to be aluminum nitride by X-ray and electron diffraction techniques. The deposited aluminum nitride films were found to be polycrystalline with the crystallite size increasing with increasing temperature of deposition. Other properties of aluminum nitride films relevant to device applications, including density, refractive index, dissolution rate, dielectric constant, and masking ability, have been determined. These properties indicate that aluminum nitride films have potential as a dielectric in electronic devices.

  20. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  1. Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

    PubMed Central

    2014-01-01

    Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

  2. A Semi-empirical Mathematical Model to Estimate the Duration of the Atmosphere within a Double Oxide Film Defect in Pure Aluminum Alloy

    NASA Astrophysics Data System (ADS)

    Raiszadeh, R.; Griffiths, W. D.

    2008-04-01

    It has been shown that the oxygen and nitrogen within the atmosphere of a double oxide film defect can be consumed by the surrounding Al melt. Experimentally determined reaction rates were used to construct a semi-empirical model to predict the change in volume with time of a bubble of air trapped in an Al melt, with the model including the diffusion of H from the metal into the bubble. Comparison with experimental results showed that the model predicted the change in volume well. The model was then used to estimate the duration of the internal atmosphere within double oxide film defects, which suggested that these would be consumed in a time of up to 3 minutes, depending upon assumptions made about the initial defect size.

  3. Heterogeneous reaction of ozone with aluminum oxide

    NASA Technical Reports Server (NTRS)

    Keyser, L. F.

    1976-01-01

    Rates and collision efficiencies for ozone decomposition on aluminum oxide surfaces were determined. Samples were characterized by BET surface area, X-ray diffraction, particle size, and chemical analysis. Collision efficiencies were found to be between 2 times 10 to the -10 power and 2 times 10 to the -9 power. This is many orders of magnitude below the value of 0.000001 to 0.00001 needed for appreciable long-term ozone loss in the stratosphere. An activation energy of 7.2 kcal/mole was found for the heterogeneous reaction between -40 C and 40 C. Effects of pore diffusion, outgassing and treatment of the aluminum oxide with several chemical species were also investigated.

  4. Fast electromigration crack in nanoscale aluminum film

    SciTech Connect

    Emelyanov, O. A. Ivanov, I. O.

    2014-08-14

    The current-induced breakage of 20 nm thin aluminum layers deposited onto capacitor grade polypropylene (PP) films is experimentally studied. Biexponential current pulses of different amplitude (10–15 A) and duration (0.1–1 μs) were applied to the samples. Breakage occurred after fast development of electromigrating ∼200 nm-wide cracks with initial propagation velocity of ∼1 m/s under a high current density of ∼10{sup 12 }A/m{sup 2}. The cracks stopped when their lengths reached 250–450 μm. This behavior is explained by the balance of electromigration and stress-induced atomic fluxes.

  5. Formation of Fine Clusters in High-Temperature Oxidation of Molten Aluminum

    NASA Astrophysics Data System (ADS)

    Kim, KeeHyun

    2014-07-01

    High-temperature oxidation of molten aluminum was investigated by high-resolution electron microscopes in order to determine the possibility of heterogeneous nucleation of aluminum grains on oxide for the grain refinement and structural uniformity of intensively melt-sheared aluminum alloys. High-resolution observations detect initial amorphous phase and gamma-alumina phase and show fine clusters with size of about 150 to 200 nm composed of extremely fine aluminum grains and gamma-alumina or amorphous aluminum oxide. Furthermore, high-resolution lattice images and diffraction patterns show no orientation relationship, although there is a specific orientation between gamma-alumina and aluminum along (111)[110] with high potency of heterogeneous nucleation. The volumetric shrinkage by the transformation of gamma- into alpha-alumina causes the surface oxide films to repeatedly rupture and leads to the creation of channels to the base melt surface for further oxidation of fresh metal. Based on the observations, the mechanism of high-temperature oxidation of molten aluminum and formation of the fine clusters as well as the possibility of the heterogeneous nucleation of aluminum grains are discussed.

  6. Characterization of Aluminum Oxide Tunnel Barrier for use in a Non-Local Spin Detection Device

    NASA Astrophysics Data System (ADS)

    Abel, Joseph; Garramone, John; Sitnitsky, Ilona; Labella, Vincent

    2010-03-01

    Aluminum oxide can be utilized as an interface layer between ferromagnetic metals and silicon to achieve spin injection into silicon. The goal of our research is to inject and readout spins using a non-local measurement device that utilizes 1-2 nm aluminum oxide interface layers as tunnel barriers. An important step of fabricating a non-local measurement device out of silicon is the growth of an aluminum oxide tunnel barrierfootnotetextO. van't Erve, A. Hanbicki, M. Holub, C. Li, C. Awo-Affouda, P. Thompson and B. Jonker, Appl. Phys. Lett. 91, 212109 (2007).. Aluminum Oxide thin films where grown using a Knudsen cell to deposit 1 nm, 2 nm, and 3 nm of aluminum. The films were then oxidized in O2. X-ray photoelectron spectroscopy (XPS) was performed to characterize the film stoichiometry, and the band gap. We will also report on current voltage measurements of these films after they have been capped with metal and compare the resistance area product to those calculated for spin injection into siliconfootnotetextB.-C. Min, K. Motohashi, C. Lodder, and R. Jansen, Nat. Mater. 5, 817 (2006). .

  7. Formation of Anodic Aluminum Oxide with Branched and Meshed Pores.

    PubMed

    Kim, Byeol; Lee, Jin Seok

    2016-06-01

    Anodic aluminum oxide (AAO), with a self-ordered hexagonal array, is important for various applications in nanofabrication including as the fabrication of nanotemplates and other nanostructures. With the consideration, there have been many efforts to control the characteristic parameters of porous anodic alumina by adjustment of the anodizing conditions such as the electrolyte, temperature, applied potential, and Al purity. In particular, impurities in Al are changing the morphology of an alumina film; however, the formation mechanism has not yet been explained. In this work, we anodized a high purity (99.999%, Al(high)) and low purity (99.8%, Al(low)) aluminum foil by a two-step anodization process in an oxalic acid solution or phosphoric acid. It was found that the purity of aluminum foil has influenced the morphology of the alumina film resulting in branched and meshed pores. Also, electrochemical analysis indicated that the branched and meshed pores in the low-purity Al foil formed by the presence of impurities. Impurities act as defects and change the general growth mechanism for pore formation by inducing an electric field imbalance during anodization. This work contributes to the research field of topographical chemistry and applied fields including nanofabrication. PMID:27427755

  8. Aluminum-silver alloy films for solar reflectors

    NASA Astrophysics Data System (ADS)

    Adams, R. O.; Nordin, C. W.; Masterson, K. D.

    1980-05-01

    Films of aluminum silver alloys were formed using triode sputtering. Films with a wide variety of composition were produced and evaluated. Films deposited at low substrate temperatures had a high specular reflectance. At higher temperatures two phase alloys formed which had rough low reflecting surfaces.

  9. Aluminum nitride insulating films for MOSFET devices

    NASA Technical Reports Server (NTRS)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  10. Ester oxidation on an aluminum surface using chemiluminescence

    NASA Technical Reports Server (NTRS)

    Jones, William R., Jr.; Meador, Michael A.; Morales, Wilfredo

    1986-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin film microoxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing .001 M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period, or the time to reach one-half of maximum intensity was inversely proportional to test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  11. Formation of anodic aluminum oxide with serrated nanochannels.

    PubMed

    Li, Dongdong; Zhao, Liang; Jiang, Chuanhai; Lu, Jia G

    2010-08-11

    We report a simple and robust method to self-assemble porous anodic aluminum oxide membranes with serrated nanochannels by anodizing in phosphoric acid solution. Due to high field conduction and anionic incorporation, an increase of anodizing voltage leads to an increase of the impurity levels and also the field strength across barrier layer. On the basis of both experiment and simulation results, the initiation and formation of serrated channels are attributed to the evolution of oxygen gas bubbles followed by plastic deformation in the oxide film. Alternating anodization in oxalic and phosphoric acids is applied to construct multilayered membranes with smooth and serrated channels, demonstrating a unique way to design and construct a three-dimensional hierarchical system with controllable morphology and composition. PMID:20617804

  12. Alkaline oxide conversion coatings for aluminum alloys

    SciTech Connect

    Buchheit, R.G.

    1996-02-01

    Three related conversion coating methods are described that are based on film formation which occurs when aluminum alloys are exposed to alkaline Li salt solutions. Representative examples of the processing methods, resulting coating structure, composition and morphology are presented. The corrosion resistance of these coatings to aerated 0.5 M NaCl solution has been evaluated as a function of total processing time using electrochemical impedance spectroscopy (EIS). This evaluation shows that excellent corrosion resistance can be uniformly achieved using no more than 20 minutes of process time for 6061-T6. Using current methods a minimum of 80 minutes of process time is required to get marginally acceptable corrosion resistance for 2024-T3. Longer processing times are required to achieve uniformly good corrosion resistance.

  13. Effect of an oxygen plasma on uncoated thin aluminum reflecting films

    NASA Technical Reports Server (NTRS)

    Parsons, Roger L.; Gulino, Daniel A.

    1987-01-01

    Thin aluminum films were considered for use as a reflective surface for solar collectors on orbiting solar dynamic power systems. A matter of concern is the durability of such reflective coatings against oxidative attack by highly reactive neutral atomic oxygen, which is the predominate chemical specie in low Earth orbit. Research to date was aimed at evaluating the protective merit of thin dielectric coatings over the aluminum or other reflective metals. However, an uncoated aluminum reflector may self-protect by virtue of the oxide formed from its exposed surface, which constitutes a physical barrier to further oxidation. This possibility was investigated, and an attempt was made to characterize the effects of atomic oxygen on thin Al films using photomicrographs, scanning electron microscopy, spectrophotometry, Auger analysis, and mass measurements. Data collected in a parallel effort is discussed for its comparative value. The results of the investigation of uncoated aluminum supported the self-protection hypothesis, and importantly, it was found that long term specular reflectance for uncoated aluminum exceeded that of Al and Ag reflectors with dielectric coatings.

  14. Adhesive behavior of aluminum layers evaporated on polyester films

    SciTech Connect

    Vallat, M.F.; Haidara, H.; Ziegler, P.; Rey, D.; Papirer, Y.; Schultz, J.

    1996-01-01

    The adhesive performance of thin aluminum coatings deposited onto polymer substrates is considered. The effects of the evaporation conditions and the metal thickness on the adhesive properties of polyester/aluminum assemblies are examined. A ultrasonic test for adherence measurements of thin metal layers is proposed and its shown that a thermal treatment under stress modifies the adhesive properties of such metallized polymer films. (AIP) {copyright}{ital 1996 American Institute of Physics.}

  15. Lithography-free transmission filters at ultraviolet frequencies using ultra-thin aluminum films

    NASA Astrophysics Data System (ADS)

    Li, Zhongyang; Butun, Serkan; Aydin, Koray

    2016-06-01

    Aluminum allows for significant plasmon responses in ultraviolet (UV) regime of spectrum, where conventional plasmonic materials such as silver and gold lack plasmonic behavior due to their inherent dissipative limitation from lower plasmon frequency and inter-band transition. Such UV plasmonic resonance based on aluminum nanostructures could be challenging due to the smaller feature size of nanoscale resonator and remarkable sensitivity to oxidization. Here we theoretically and experimentally demonstrate lithography-free transmission filters using triple layers of continuous ultra-thin Al and dielectric films. Our proposed transmission filter is a triple-layer Fabry–Perot cavity and operates from 2.5 to 5.5 eV with bandwidth down to 0.5 eV and transmission amplitude up to 50%. Such flat Al ultra-thin film coatings suggest the use of aluminum as low-cost UV filters and UV optoelectronics as well as structural coloring applications.

  16. Nanopatterning of Crystalline Silicon Using Anodized Aluminum Oxide Templates for Photovoltaics

    NASA Astrophysics Data System (ADS)

    Chao, Tsu-An

    A novel thin film anodized aluminum oxide templating process was developed and applied to make nanopatterns on crystalline silicon to enhance the optical properties of silicon. The thin film anodized aluminum oxide was created to improve the conventional thick aluminum templating method with the aim for potential large scale fabrication. A unique two-step anodizing method was introduced to create high quality nanopatterns and it was demonstrated that this process is superior over the original one-step approach. Optical characterization of the nanopatterned silicon showed up to 10% reduction in reflection in the short wavelength range. Scanning electron microscopy was also used to analyze the nanopatterned surface structure and it was found that interpore spacing and pore density can be tuned by changing the anodizing potential.

  17. Growth behavior of anodic oxide formed by aluminum anodizing in glutaric and its derivative acid electrolytes

    NASA Astrophysics Data System (ADS)

    Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Suzuki, Ryosuke O.

    2014-12-01

    The growth behavior of anodic oxide films formed via anodizing in glutaric and its derivative acid solutions was investigated based on the acid dissociation constants of electrolytes. High-purity aluminum foils were anodized in glutaric, ketoglutaric, and acetonedicarboxylic acid solutions under various electrochemical conditions. A thin barrier anodic oxide film grew uniformly on the aluminum substrate by glutaric acid anodizing, and further anodizing caused the film to breakdown due to a high electric field. In contrast, an anodic porous alumina film with a submicrometer-scale cell diameter was successfully formed by ketoglutaric acid anodizing at 293 K. However, the increase and decrease in the temperature of the ketoglutaric acid resulted in non-uniform oxide growth and localized pitting corrosion of the aluminum substrate. An anodic porous alumina film could also be fabricated by acetonedicarboxylic acid anodizing due to the relatively low dissociation constants associated with the acid. Acid dissociation constants are an important factor for the fabrication of anodic porous alumina films.

  18. Fabrication of Crystalline Indium Tin Oxide Nanobasket Electrodes using Aluminum Anodic Oxide Template

    NASA Astrophysics Data System (ADS)

    Wang, Gou-Jen; Chen, He-Tsing; Yang, Hsihang

    2008-07-01

    Fabrication of crystalline indium tin oxide (ITO) nanobasket electrodes shaped by an anodic aluminum oxide (AAO) template for better electron conductivity is presented. ITO films were deposited on porous AAO templates by RF magnetron sputtering. The sputter-coated ITO films were characterized by field-emission scanning electron microscopy (FESEM) to illustrate the nanobasket morphologies. The compositions of the ITO films were characterized by energy-dispersive X-ray (EDS) analysis. X-ray diffraction (XRD) analysis was conducted to evaluate the crystallinity. The crystallinity can be enhanced by annealing at 300 °C. Although the conductivity of the ITO nanobasket film is larger than that of the conventional ITO thin film, the harvest efficiency can be markedly increased due to the nanobasket structure which enables most of the photoexcited electrons to reach their nearest electrode before losing their momentum. The presented ITO nanobasket films can be further used as a more effective electrode material for photovoltaics such as dye-sensitized solar cells (DSSCs).

  19. Angle selective light management in photovoltaics using self-assembled anodized aluminum oxide nanopatterns

    NASA Astrophysics Data System (ADS)

    Roberts, Brian; Ku, P.-C.

    2015-03-01

    Semitransparent photovoltaics are of interest for building integration and window coatings, though demonstrate an intrinsic tradeoff between transparency and absorption / efficiency. We propose alleviating this tradeoff using light management nanostructures which selectively scatter light based on incident wavelength and angle, allowing transmission of normally incident light for window visibility and absorption of light at elevated angles. Two structures of interest are proposed and described: metal nanorods which scatter light via their localized surface plasmon resonance properties, and arrays of subwavelength nanopores in a dielectric which demonstrate coherent multiple scattering. Both structures can potentially be patterned over large areas by electrochemical oxidation of aluminum into self assembled nanoporous anodized aluminum oxide (AAO) films.

  20. Fabrication of anodic aluminum oxide with incorporated chromate ions

    NASA Astrophysics Data System (ADS)

    Stępniowski, Wojciech J.; Norek, Małgorzata; Michalska-Domańska, Marta; Bombalska, Aneta; Nowak-Stępniowska, Agata; Kwaśny, Mirosław; Bojar, Zbigniew

    2012-10-01

    The anodization of aluminum in 0.3 M chromic acid is studied. The influence of operating conditions (like anodizing voltage and electrolyte's temperature) on the nanoporous anodic aluminum oxide geometry (including pore diameter, interpore distance, the oxide layer thickness and pores density) is thoroughly investigated. The results revealed typical correlations of the anodic alumina nanopore geometry with operating conditions, such as linear increase of pore diameter and interpore distance with anodizing voltage. The anodic aluminum oxide is characterized by a low pores arrangement, as determined by Fast Fourier transforms analyses of the FE-SEM images, which translates into a high concentration of oxygen vacancies. Moreover, an optimal experimental condition where chromate ions are being successfully incorporated into the anodic alumina walls, have been determined: the higher oxide growth rate the more chromate ions are being trapped. The trapped chromate ions and a high concentration of oxygen vacancies make the anodic aluminum oxide a promising luminescent material.

  1. Metal oxide films on metal

    DOEpatents

    Wu, Xin D.; Tiwari, Prabhat

    1995-01-01

    A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

  2. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  3. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  4. Modeling the Shock Ignition of a Copper Oxide Aluminum Thermite

    NASA Astrophysics Data System (ADS)

    Lee, Kibaek; Stewart, D. Scott; Clemenson, Michael; Glumac, Nick; Murzyn, Christopher

    2015-06-01

    An experimental ``striker confinement'' shock compression test was developed in the Glumac-group at the University of Illinois to study ignition and reaction in composite reactive materials. These include thermitic and intermetallic reactive powders. The test places a sample of materials such as a thermite mixture of copper oxide and aluminum powders that are initially compressed to about 80 percent full density. Two RP-80 detonators simultaneously push steel bars into reactive material and the resulting compression causes shock compaction of the material and rapid heating. At that point one observes significant reaction and propagation of fronts. But the fronts are peculiar in that they are comprised of reactive events that can be traced to the reaction/diffusion of the initially separated reactants of copper oxide and aluminum that react at their mutual interfaces that nominally make copper liquid and aluminum oxide products. We discuss our model of the shock ignition of the copper oxide aluminum thermite in the context of the striker experiment and how a Gibbs formulation model, that includes multi-components for liquid and solid phases of aluminum, copper oxide, copper and aluminum oxide can predict the events observed at the particle scale in the experiments. Supported by HDTRA1-10-1-0020 (DTRA), N000014-12-1-0555 (ONR).

  5. Self-supported aluminum thin films produced by vacuum deposition process

    NASA Technical Reports Server (NTRS)

    Neff, J. E.; Timme, R. W.

    1966-01-01

    Self-supported aluminum thin film is produced by vacuum depositing the film on a polyvinyl formal resin film and then removing the resin by radiant heating in the vacuum. The aluminum film can be used as soon as the resin is eliminated.

  6. Electron-stimulated desorption study of hydrogen-exposed aluminum films

    NASA Technical Reports Server (NTRS)

    Park, CH.; Bujor, M.; Poppa, H.

    1984-01-01

    H2 adsorption of evaporated clean and H2-exposed aluminum films is investigated by using the electron-stimulated desorption (ESD) method. A strong H(+)ESD signal is observed on a freshly evaporated aluminum surface which is clean according to previously proposed cleanlines criteria. An increased H(+) yield on H2 exposure is also observed. However, the increasing rate of H(+) emission could be directly correlated with small increases in H2O partial pressure during H2 exposure. It is proposed that the oxidation of aluminum by water vapor and subsequent adsorption of H2 or water is the primary process of the enhanced high H(+) yield during H2 exposure.

  7. Optical Studies of Defects in Aluminum Oxide.

    NASA Astrophysics Data System (ADS)

    James, Floyd Jasper

    Defects in aluminum oxide single crystals were studied using optical absorption, photoluminescence, and thermally stimulated luminescence. The primary defect in Al(,2)O(,3) is the oxygen vacancy. A vacancy trapping 2 electrons, the F center, absorbs at 6.0 eV, and the F('+) center, trapping 1 electron, absorbs at 4.8 eV, 5.4 eV, and possibly 6.1 eV. Neutron bombardment produces F and F('+) centers, while electron bombardment or treatment by growth in a reducing atmosphere makes predominantly F centers. Isochronal and isothermal anneals of neutron-irradiated material show no discrete stages in the annealing of the oxygen vacancy, as monitored by the decrease in optical absorption of the F center, and so no activation energy for the process could be determined. Photoluminescence studies of neutron-irradiated, additively colored, electron irradiated, and growth colored crystals shows the mainly the 6.0 eV - 3.0 eV F center absorption-emission pair, while bombarded samples show reduced F emission, and also F('+) emissions, including the dominant 4.8 - 3.2 eV peak. By using computer controlled excitation and analyzing monochromators, luminescence peak detection was improved, and several new absorption-emission pairs were found. Thermally stimulated luminescence (TSL) was conducted from 77 K to room temperature on growth-colored and non growth-colored samples, using ultraviolet light as the exciting agent. The common 260 K TSL peak is largest at 6.0 eV in exciting wavelength, and shows emission similar to that of the F center. This was not seen in a crystal not containing F centers. Also, a peak at 230 K can be produced in growth-colored crystals by bleaching at about 200 K.

  8. Preparation of micro/nano-structure superhydrophobic film on aluminum plates using galvanic corrosion method.

    PubMed

    Wu, Ruomei; Chao, Guang Hua; Jiang, Haiyun; Pan, Anqiang; Chen, Hong; Yuan, Zhiqing; Liu, Qilong

    2013-10-01

    A simple and novel approach has been developed to obtain a microporous film with compound nanoparticles on the surface of aluminum alloy substrate using the galvanic corrosion method. The wettability of the surface changes from hydrophilicity to superhydrophobicity after chemical modification with stearic acid (SA). The water contact angle (WCA) and sliding angle (WSA) of superhydrophobic aluminum alloy surface (SAAS) are 154 degrees and 9 degrees, respectively. The roughness of the aluminum substrate increases after the oxidation reaction. The porous aluminum matrix surface is covered with irregularly shaped holes with a mean radius of about 15 microm, similar to the surface papillae of natural Lotus leaf, with villus-like nanoparticles array on pore surfaces. The superhydrophobic property is attributed to this special surface morphology and low surface energy SA. X-ray powder diffraction (XRD) pattern and Energy Dispersive X-Ray Spectroscopy (EDS) spectrum indicate that Al2O3, Al(OH)3 and AIO(OH) has been formed on the surface of aluminum substrate after the oxidation reaction. The Raman spectra indicate that C-H bond from SA and the Al-O are formed on the SAAS. The as-formed SAAS has good stability. PMID:24245140

  9. A Conducting Polymer Film Stronger Than Aluminum

    NASA Astrophysics Data System (ADS)

    Shi, Gaoquan; Jin, Shi; Xue, Gi; Li, Cun

    1995-02-01

    Polythiophene (Pth) was electrochemically deposited onto stainless steel substrate from freshly distilled boron fluoride-ethyl ether containing 10 millimoles of thiophene per liter. The free-standing Pth film obtained at an applied potential of 1.3 volts (versus Ag/AgCl) had a conductivity of 48.7 siemens per centimeter. Its tensile strength (1200 to 1300 kilograms per square centimeter) was greater than that of aluminium (1000 to 1100 kilograms per square centimeter). This Pth film behaves like a metal sheet and can be easily cut into various structures with a knife or a pair of scissors.

  10. Ion-induced oxidation of aluminum during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kreiter, Oliver; Grosse-Kreul, Simon; Corbella, Carles; von Keudell, Achim

    2013-04-01

    Particle beam experiments were conducted in an ultra-high-vacuum vessel to mimic target poisoning during reactive magnetron sputtering of aluminum. Aluminum targets were exposed to quantified beams of argon ions, oxygen atoms and molecules, and aluminum vapour. The growth and etch rates were measured in situ by means of an Al-coated quartz crystal microbalance. The chemical state of the target surface was monitored in-situ by real-time Fourier transform infrared spectroscopy. The surface processes were modelled through a set of balance equations providing sputter yields and sticking coefficients. The results indicate that the oxygen uptake of the aluminum surface is enhanced by a factor 1 to 2 by knock-on implantation and that the deposition of aluminum is not affected by the oxidation state of the surface.

  11. Pronounced Linewidth Narrowing of an Aluminum Nanoparticle Plasmon Resonance by Interaction with an Aluminum Metallic Film.

    PubMed

    Sobhani, Ali; Manjavacas, Alejandro; Cao, Yang; McClain, Michael J; García de Abajo, F Javier; Nordlander, Peter; Halas, Naomi J

    2015-10-14

    Aluminum nanocrystals and fabricated nanostructures are emerging as highly promising building blocks for plasmonics in the visible region of the spectrum. Even at the individual nanocrystal level, however, the localized plasmons supported by Al nanostructures possess a surprisingly broad spectral response. We have observed that when an Al nanocrystal is coupled to an underlying Al film, its dipolar plasmon resonance linewidth narrows remarkably and shows an enhanced scattering efficiency. This behavior is observable in other plasmonic metals, such as gold; however, it is far more dramatic in the aluminum nanoparticle-film system, reducing the dipolar plasmon linewidth by more than half. A substrate-mediated hybridization of the dipolar and quadrupolar plasmons of the nanoparticle reduces the radiative losses of the dipolar plasmon. While this is a general effect that applies to all metallic nanoparticle-film systems, this finding specifically provides a new mechanism for narrowing plasmon resonances in aluminum-based systems, quite possibly expanding the potential of Al-based plasmonics in real-world applications. PMID:26383818

  12. BONDING ALUMINUM METALS

    DOEpatents

    Noland, R.A.; Walker, D.E.

    1961-06-13

    A process is given for bonding aluminum to aluminum. Silicon powder is applied to at least one of the two surfaces of the two elements to be bonded, the two elements are assembled and rubbed against each other at room temperature whereby any oxide film is ruptured by the silicon crystals in the interface; thereafter heat and pressure are applied whereby an aluminum-silicon alloy is formed, squeezed out from the interface together with any oxide film, and the elements are bonded.

  13. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    SciTech Connect

    Fiorentino, Giuseppe Morana, Bruno; Forte, Salvatore; Sarro, Pasqualina Maria

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  14. Transparent Conductive Oxides in Thin Film Photovoltaics

    NASA Astrophysics Data System (ADS)

    Hamelmann, Frank U.

    2014-11-01

    This paper show results from the development of transparent conductive oxides (TCO's) on large areas for the use as front electrode in thin film silicon solar modules. It is focused on two types of zinc oxide, which are cheap to produce and scalable to a substrate size up to 6 m2. Low pressure CVD with temperatures below 200°C can be used for the deposition of boron doped ZnO with a native surface texture for good light scattering, while sputtered aluminum doped ZnO needs a post deposition treatment in an acid bath for a rough surface. The paper presents optical and electrical characterization of large area samples, and also results about long term stability of the ZnO samples with respect to the so called TCO corrosion.

  15. Mueller Matrix of Specular Reflection Using an Aluminum Grating Surface with Oxide Nanofilm.

    PubMed

    Qiu, Jun; Ran, Dongfang; Liu, Linhua; Hsu, Pei-Feng

    2016-06-01

    The accurate nondestructive and real-time determination of the critical dimensions of oxide nanofilms on periodic nanostructures has potential applications in nanofabrication techniques. Mueller ellipsometry is fast, accurate, nondestructive, and can be used in the ambient air. This study used the elements of a Mueller matrix of specular reflection, which is based on a Mueller ellipsometry method, to evaluate the thickness of an oxide nanofilm on an aluminum grating surface. By using non-traditional rigorous coupled-wave analysis (RCWA), we decomposed the Mueller matrix to obtain the relationship between the evaluated polarization properties of reflected light and the dimensions of oxide nanofilms on aluminum grating surfaces. We also quantitatively analyzed the Mueller matrix elements' variation due to the thicknesses of top, sidewall, and bottom oxides. We consider these oxide films are naturally formed and of nonuniform thickness on grating structures. The results show that the elements of Mueller matrix shift with the increasing of the uniform thickness of oxide at a fixed wavelength. Moreover, as oxide nanofilms on grating structures are nonuniform, the impact of the thickness of side wall oxide on the Mueller matrix elements is more obvious than that of top and bottom oxides at the relative larger incidence wavelength range. The finding of this work may facilitate the nondestructive and real-time measurement of the thickness of oxide nanofilms on metal gratings where the metal is easily oxidized. PMID:27129364

  16. Bottom-Up Preparation of Ultrathin 2D Aluminum Oxide Nanosheets by Duplicating Graphene Oxide.

    PubMed

    Huang, Zhifeng; Zhou, Anan; Wu, Jifeng; Chen, Yunqiang; Lan, Xiaoli; Bai, Hua; Li, Lei

    2016-02-24

    2D ultrathin aluminum oxide (2D-Al2O3) nanosheets are prepared by duplicating graphene oxide. An amorphous precursor of the hydroxide of aluminum is first deposited onto graphene oxide sheets, which are then converted into 2D-Al2 O3 nanosheets by calcination, while the graphene oxide is removed. The 2D-Al2O3 nanosheets have a large specific surface area and a superior adsorption capacity to fluoride ions. PMID:26678843

  17. Oxidation of aluminum particles in the presence of water.

    PubMed

    Schoenitz, Mirko; Chen, Chi-Mon; Dreizin, Edward L

    2009-04-16

    Oxidation of spherical aluminum powder was investigated in mixed argon-oxygen-steam atmospheres by thermogravimetric measurements at heating rates between 1 and 20 K/min and up to 1100 degrees C. The observed oxidation behavior in the presence of steam differs markedly from oxidation in dry oxygen. Oxidation in steam is complete near 1000 degrees C vs 1500 degrees C in dry oxygen. Furthermore, in steam, a stepwise weight change is observed at the melting point of aluminum, while no such step can be distinguished in dry oxygen. The complete oxidation observed at a lower temperature in steam as compared to dry oxygen is explained by the stabilization of the gamma polymorph of the surface oxide in the presence of water so that a denser and slower growing alpha-alumina does not form until higher temperatures. Experiments in mixed oxygen/steam oxidizers showed that the size of the oxidation step observed upon aluminum melting only correlates with the concentration of steam in the atmosphere. This may be interpreted as the effect of transient porosity, the degree of which is controlled by the steam concentration, or the surface oxide stressed by the expanding melting metal core may behave as a semipermeable membrane where hydrous species have significantly higher diffusion rates than oxygen. A clear distinction cannot be drawn, and further research is warranted. Preliminary results on isoconversion processing of the oxidation kinetics are presented. PMID:19309144

  18. Fabrication of nano-structured super-hydrophobic film on aluminum by controllable immersing method

    NASA Astrophysics Data System (ADS)

    Wu, Ruomei; Liang, Shuquan; Pan, Anqiang; Yuan, Zhiqing; Tang, Yan; Tan, Xiaoping; Guan, Dikai; Yu, Ya

    2012-06-01

    Aluminum alloy surface can be etched easily in acid environment, but the microstructure of alloy surface hardly meets the customers' demand. In this work, a facile acidic-assistant surface oxidation technique has been employed to form reproducible super-hydrophobic surfaces on aluminum alloy plates. The samples immersed in three different acid solutions at ambient temperatures are studied and the results demonstrated that the aqueous mixture solution of oxalic acid and hydrochloric is easier to produce better faces and better stability. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectrometer, X-ray photoelectron spectroscopy (XPS) and water contact angle measurement are used to investigate the morphologies, microstructures, chemical compositions and hydrophobicity of the produced films on aluminum substrates. The surfaces, configured of a labyrinth structure with convexity and concavity, are in different roughness and gloss because of the different recipe acid solutions used. Better roughness of the surface can be obtained by adjusting the concentration of Clˉ and oxalate ions in acid solutions. The present research work provides a new strategy for the controllable preparation super-hydrophobic films of general materials on aluminum alloy for practical industrial applications.

  19. Alginate-magnesium aluminum silicate composite films: effect of film thickness on physical characteristics and permeability.

    PubMed

    Pongjanyakul, Thaned; Puttipipatkhachorn, Satit

    2008-01-01

    The different film thicknesses of the sodium alginate-magnesium aluminum silicate (SA-MAS) microcomposite films were prepared by varying volumes of the composite dispersion for casting. Effect of film thickness on thermal behavior, solid-state crystallinity, mechanical properties, water uptake and erosion, and water vapor and drug permeability of the microcomposite films were investigated. The film thickness caused a small change in thermal behavior of the films when tested using DSC and TGA. The crystallinity of the thin films seemed to increase when compared with the thick films. The thin films gave higher tensile strength than the thick films, whereas % elongation of the films was on the contrary resulted in the lower Young's modulus of the films when the film thickness was increased. This was due to the weaker of the film bulk, suggesting that the microscopic matrix structure of the thick films was looser than that of the thin films. Consequently, water uptake and erosion, water vapor permeation and drug diffusion coefficient of the thick films were higher than those of the thin films. The different types of drug on permeability of the films also showed that a positive charge and large molecule of drug, propranolol HCl, had higher lag time and lower diffusion coefficient that acetaminophen, a non-electrolyte and small molecule. This was because of a higher affinity of positive charge drug on MAS in the films. The findings suggest that the evaporation rate of solvent in different volumes of the composite dispersion used in the preparation method could affect crystallinity and strength of the film surface and film bulk of the microcomposite films. This led to a change in water vapor and drug permeability of the films. PMID:17611056

  20. Optimization study of the femtosecond laser-induced forward-transfer process with thin aluminum films

    NASA Astrophysics Data System (ADS)

    Bera, Sudipta; Sabbah, A. J.; Yarbrough, J. M.; Allen, C. G.; Winters, Beau; Durfee, Charles G.; Squier, Jeff A.

    2007-07-01

    The parameters for an effective laser-induced forward-transfer (LIFT) process of aluminum thin films using a femtosecond laser are studied. Deposited feature size as a function of laser fluence, donor film thickness, quality of focus, and the pulse duration are varied, providing a metric of the most desirable conditions for femtosecond LIFT with thin aluminum films.

  1. Impurity-defect structure of anodic aluminum oxide produced by two-sided anodizing in tartaric acid

    NASA Astrophysics Data System (ADS)

    Chernyakova, K. V.; Vrublevsky, I. A.; Ivanovskaya, M. I.; Kotsikau, D. A.

    2012-03-01

    Porous aluminum oxide is prepared in a 0.4 M aqueous solution of tartaric acid by two-sided anodizing. Fourier Transform IR spectroscopy (FTIR) data reveal the presence, in the alumina, of unoxidized tartarate ions, as well as products of their partial (radical organic products and CO) and complete (CO2) oxidation. Carboxylate ions and elemental carbon contained in the anodic oxide impart a gray color to the films.

  2. The Strength of the Metal. Aluminum Oxide Interface

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1984-01-01

    The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

  3. The anodizing behavior of aluminum in malonic acid solution and morphology of the anodic films

    NASA Astrophysics Data System (ADS)

    Ren, Jianjun; Zuo, Yu

    2012-11-01

    The anodizing behavior of aluminum in malonic acid solution and morphology of the anodic films were studied. The voltage-time response for galvanostatic anodization of aluminum in malonic acid solution exhibits a conventional three-stage feature but the formation voltage is much higher. With the increase of electrolyte concentration, the electrolyte viscosity increases simultaneously and the high viscosity decreases the film growth rate. With the concentration increase of the malonic acid electrolyte, the critical current density that initiates local "burning" on the sample surface decreases. For malonic acid anodization, the field-assisted dissolution on the oxide surface is relatively weak and the nucleation of pores is more difficult, which results in greater barrier layer thickness and larger cell dimension. The embryo of the porous structure of anodic film has been created within the linear region of the first transient stage, and the definite porous structure has been established before the end of the first transient stage. The self-ordering behavior of the porous film is influenced by the electrolyte concentration, film thickness and the applied current density. Great current density not only improves the cell arrangement order but also brings about larger cell dimension.

  4. The effect of surface oxide layer on the rate of hydrogen emission from aluminum and its alloys in a high vacuum

    NASA Technical Reports Server (NTRS)

    Makarova, V. I.; Zyabrev, A. A.

    1979-01-01

    The influence of surface oxide layers on the kinetics of hydrogen emission at the high vacuum of 10 to the minus 8th power torr was investigated at temperatures from 20 to 450 C using samples of pure AB00 aluminum and the cast alloy AMg. Cast and deformed samples of AMts alloy were used to study the effect of oxide film thickness on the rate of hydrogen emission. Thermodynamic calculations of the reactions of the generation and dissociation of aluminum oxide show that degasification at elevated temperatures (up to 600 C) and high vacuum will not reduce the thickness of artificially-generated surface oxide layers on aluminum and its alloys.

  5. Morphology and water-barrier properties of silane films on aluminum and silicon

    SciTech Connect

    Pan, Guirong; Schaefer, Dale W.

    2010-12-03

    The goal of this study is to understand the effect of the substrate on the morphology and water-barrier properties of bis-silane films. Silane films are deposited on both Si and Al. Neutron reflectivity is used to assess the effect of hydrothermal conditioning on the films. Aluminum on silicon (no silane) was characterized first to facilitate understanding of the more complicated silane on Al-coated Si. A 200-{angstrom} Al layer with 55-{angstrom} oxide covers the surface of the silicon wafer. The reflectivity data show that water penetrates into the oxide layer. Silane films deposited on either Al or Si substrates have similar bulk and top-surface morphology. Studies of silanes on Si wafers, therefore, can be generalized to include Al. The substrate-silane interface, however, does depend on both the substrate and the silane. Because pH of the bis-sulfur silane solution is outside of the stability range for Al{sub 2}O{sub 3}, dissolution of the thin oxide film occurs during solution deposition. A water-depletion area is formed at the interface region due to this reaction.

  6. Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals

    DOEpatents

    Buonsanti, Raffaella; Milliron, Delia J

    2015-02-24

    The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.

  7. Use of aluminum as an oxidation barrier for titanium

    NASA Technical Reports Server (NTRS)

    Unnam, J.; Shenoy, R. N.; Wiedemann, K. E.; Clark, R. K.

    1985-01-01

    A study is conducted of the use of aluminum coatings as oxidation retardants for Ti alloys, using room temperature normal emittance and spectral emittance as bases for the characterization of oxidation properties with and without the coatings. Thermal exposures were conducted in a thermogravimetric analysis apparatus in which specimen weight was continuously monitored. The results obtained indicate that the weight gains are proportional to the square root of the time for uncoated alloys and for 649 C-exposed aluminum-coated alloys. For the 704 C-exposed aluminum-coated alloys, weight gain exhibits a low rate for short and a high rate for long exposure times, implying that the 0.5-micron coating's protection decreases for long exposures at this temperature.

  8. The Identification of Stable Reaction Intermediates on Aluminum Oxide Surfaces with Inelastic Electron Tunneling Spectroscopy

    NASA Astrophysics Data System (ADS)

    Templeton, Michael Karpovich

    The stable surface intermediates that were formed in several heterogeneous reactions on aluminum oxide films were identified with inelastic electron tunneling spectroscopy. The alumina films were synthesized by the plasma oxidation of aluminum metal films. The temperature and exposure dependent interaction of cyclopropane carboxylic acid with alumina films was studied. Cyclopropane carboxylate and n-butane carboxylate were the only adsorbed species formed. The n-butane carboxylate results from hydrogenolysis of the cyclopropyl ring of the adsorbed cyclopropane carboxylate with hydrogen supplied by surface hydroxyl groups. The relative populations of the two surface species are strongly dependent upon coverage and temperature. The adsorption of gaseous dimethyl methyl phosphonate (DMMP) on alumina films was investigated. Surface temperatures ranged between 200 K and 673 K, and exposures ranged between 3 x 10('-4) and 10 Torr-s. Tunneling spectra of deuterium labeled DMMP, perdeutero methyl alcohol, methyl methyl phosphonic acid, methyl phosphonic acid and trimethyl phosphine oxide, all adsorbed on aluminum oxide surfaces, were used to clarify the structures of the species resulting from the adsorption and decomposition of DMMP. At 200 K, DMMP is adsorbed molecularly with high surface coverages. At surface temperatures above 295 K, DMMP is adsorbed dissociatively in low coverages. Surface temperatures above 473 K lead to the dealkylation of the dissociatively adsorbed adspecies, which results in the formation of adsorbed methyl phosphonate. The adsorption and reaction of three phosphonate esters on alumina films was comparatively examined. The phosphonate esters were diisopropyl methyl phosphonate (DIMP), dimethyl methyl phosphonate (DMMP) and diphenyl methyl phosphonate (DPMP). The adsorption temperatures ranged from 200 to 673 K. At 373 K, DIMP was found to adsorb dissociatively in low coverages as isopropyl methyl phosphonate. Above 373 K the isopropyl methyl

  9. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    NASA Astrophysics Data System (ADS)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-07-01

    Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using µ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  10. OXYANION SORPTION TO HIGH SURFACE AREA IRON AND ALUMINUM OXIDES

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Sorption of selected oxyanions (Mo, As, and P) to high surface area iron and aluminum oxides was investigated using in situ Raman and ATR-FTIR spectroscopy, batch sorption methods, electrophoretic mobility measurements, and surface complexation modeling. In situ ATR-FTIR and Raman spectra were coup...

  11. Aluminum oxide filler prevents obstructions in tubing during welding

    NASA Technical Reports Server (NTRS)

    Okelly, K. P.

    1966-01-01

    Granular aluminum oxide is used as filler in serpentine tubing while welding the tubing to a flat surface. The filler eliminates obstructions in the tubes formed by molten weld nuggets and is porous enough to allow gases to escape from the welding area.

  12. Identity of Passive Film Formed on Aluminum in Li-ion BatteryElectrolytes with LiPF6

    SciTech Connect

    Zhang, Xueyuan; Devine, T.M.

    2006-09-01

    The passive film that forms on aluminum in 1:1 ethylene carbonate + ethylmethyl carbonate with 1.2M LiPF{sub 6} and 1:1 ethylene carbonate + dimethyl carbonate with 1.0M LiPF{sub 6} was investigated by a combination of electrochemical quartz crystal microbalance measurements (EQCM), electrochemical impedance spectroscopy (EIS), and x-ray photoelectron spectroscopy. During anodic polarization of aluminum a film of AlF{sub 3} forms on top of the air-formed oxide, creating a duplex, or two-layered film. The thickness of the AlF{sub 3} increases with the applied potential. Independent measurements of film thickness by EQCM and EIS indicate that at a potential of 5.5V vs. Li/Li{sup +}, the thickness of the AlF{sub 3} is approximately 1 nm.

  13. Effect of intermetallic phases on the anodic oxidation and corrosion of 5A06 aluminum alloy

    NASA Astrophysics Data System (ADS)

    Li, Song-mei; Li, Ying-dong; Zhang, You; Liu, Jian-hua; Yu, Mei

    2015-02-01

    Intermetallic phases were found to influence the anodic oxidation and corrosion behavior of 5A06 aluminum alloy. Scattered intermetallic particles were examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) after pretreatment. The anodic film was investigated by transmission electron microscopy (TEM), and its corrosion resistance was analyzed by electrochemical impedance spectroscopy (EIS) and Tafel polarization in NaCl solution. The results show that the size of Al-Fe-Mg-Mn particles gradually decreases with the iron content. During anodizing, these intermetallic particles are gradually dissolved, leading to the complex porosity in the anodic film beneath the particles. After anodizing, the residual particles are mainly silicon-containing phases, which are embedded in the anodic film. Electrochemical measurements indicate that the porous anodic film layer is easily penetrated, and the barrier plays a dominant role in the overall protection. Meanwhile, self-healing behavior is observed during the long immersion time.

  14. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  15. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  16. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  17. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  18. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  19. Reduction of Oxidative Melt Loss of Aluminum and Its Alloys

    SciTech Connect

    Dr. Subodh K. Das; Shridas Ningileri

    2006-03-17

    This project led to an improved understanding of the mechanisms of dross formation. The microstructural evolution in industrial dross samples was determined. Results suggested that dross that forms in layers with structure and composition determined by the local magnesium concentration alone. This finding is supported by fundamental studies of molten metal surfaces. X-ray photoelectron spectroscopy data revealed that only magnesium segregates to the molten aluminum alloy surface and reacts to form a growing oxide layer. X-ray diffraction techniques that were using to investigate an oxidizing molten aluminum alloy surface confirmed for the first time that magnesium oxide is the initial crystalline phase that forms during metal oxidation. The analytical techniques developed in this project are now available to investigate other molten metal surfaces. Based on the improved understanding of dross initiation, formation and growth, technology was developed to minimize melt loss. The concept is based on covering the molten metal surface with a reusable physical barrier. Tests in a laboratory-scale reverberatory furnace confirmed the results of bench-scale tests. The main highlights of the work done include: A clear understanding of the kinetics of dross formation and the effect of different alloying elements on dross formation was obtained. It was determined that the dross evolves in similar ways regardless of the aluminum alloy being melted and the results showed that amorphous aluminum nitride forms first, followed by amorphous magnesium oxide and crystalline magnesium oxide in all alloys that contain magnesium. Evaluation of the molten aluminum alloy surface during melting and holding indicated that magnesium oxide is the first crystalline phase to form during oxidation of a clean aluminum alloy surface. Based on dross evaluation and melt tests it became clear that the major contributing factor to aluminum alloy dross was in the alloys with Mg content. Mg was

  20. Thick film fabrication of aluminum nitride microcircuits. Final report

    SciTech Connect

    Perdieu, L.H.

    1994-03-01

    A new substrate material, aluminum nitride (AlN), and 11 new thick film inks were analyzed to determine their chemical compatibility, their electrical properties, their mechanical properties, and their overall suitability for use in the manufacturing of high-power microcircuits with efficient thermal properties. Because high-power chips emit a great deal of heat in a small surface area, a new substrate material was needed to dissipate that heat faster than the substrate material currently in use. Overall, the new materials were found to be acceptable for accomplishing this purpose.

  1. Drilling of aluminum and copper films with femtosecond double-pulse laser

    NASA Astrophysics Data System (ADS)

    Wang, Qinxin; Luo, Sizuo; Chen, Zhou; Qi, Hongxia; Deng, Jiannan; Hu, Zhan

    2016-06-01

    Aluminum and copper films are drilled with femtosecond double-pulse laser. The double-pulse delay is scanned from -75 ps to 90 ps. The drilling process is monitored by recording the light transmitted through the sample, and the morphology of the drilled holes is analyzed by optical microscopy. It is found that, the breakthrough time, the hole evolution during drilling, the redeposited material, the diameters of the redeposited area and the hole, change as functions of double-pulse delay, and are different for the two metals. Along the double-pulse delay axis, three different time constants are observed, a slow one of a few tens of picoseconds, a fast one of a few picoseconds, and an oscillation pattern. Results are discussed based on the mechanisms of plasma shielding, electron-phonon coupling, strong coupling of laser with liquid phase, oxidation of aluminum, laser induced temperature and pressure oscillations, and the atomization of plume particles.

  2. Effect of processing on structural features of anodic aluminum oxides

    NASA Astrophysics Data System (ADS)

    Erdogan, Pembe; Birol, Yucel

    2012-09-01

    Morphological features of the anodic aluminum oxide (AAO) templates fabricated by electrochemical oxidation under different processing conditions were investigated. The selection of the polishing parameters does not appear to be critical as long as the aluminum substrate is polished adequately prior to the anodization process. AAO layers with a highly ordered pore distribution are obtained after anodizing in 0.6 M oxalic acid at 20 °C under 40 V for 5 minutes suggesting that the desired pore features are attained once an oxide layer develops on the surface. While the pore features are not affected much, the thickness of the AAO template increases with increasing anodization treatment time. Pore features are better and the AAO growth rate is higher at 20 °C than at 5 °C; higher under 45 V than under 40 V; higher with 0.6 M than with 0.3 M oxalic acid.

  3. Effect of grain size on the melting point of confined thin aluminum films

    NASA Astrophysics Data System (ADS)

    Wejrzanowski, Tomasz; Lewandowska, Malgorzata; Sikorski, Krzysztof; Kurzydlowski, Krzysztof J.

    2014-10-01

    The melting of aluminum thin film was studied by a molecular dynamics (MD) simulation technique. The effect of the grain size and type of confinement was investigated for aluminum film with a constant thickness of 4 nm. The results show that coherent intercrystalline interface suppress the transition of solid aluminum into liquid, while free-surface gives melting point depression. The mechanism of melting of polycrystalline aluminum thin film was investigated. It was found that melting starts at grain boundaries and propagates to grain interiors. The melting point was calculated from the Lindemann index criterion, taking into account only atoms near to grain boundaries. This made it possible to extend melting point calculations to bigger grains, which require a long time (in the MD scale) to be fully molten. The results show that 4 nm thick film of aluminum melts at a temperature lower than the melting point of bulk aluminum (933 K) only when the grain size is reduced to 6 nm.

  4. Electrochromism in nickel oxide films

    SciTech Connect

    Wruck, D.A.

    1991-01-01

    Optical absorption in a thin-film nickel oxide electrode depends on the state of charge of the electrode; the effect has been called electrochromism, and it may have practical applications in low-speed light modulation devices. In this dissertation, the physical and chemical processes which lead to the change in optical properties are investigated. Preparation of NiO film electrodes by reactive sputtering of a Ni target in an Ar + O[sub 2] gas mixture is described, and the electrochromic response is correlated to film growth conditions. Structural, electronic, and electrochemical properties of the NiO films are characterized by x-ray diffraction, infrared absorption, x-ray photoemission, optical absorption, electrical conductivity, and electrochemical measurements. It is proposed that the electrochromism results from the adsorption and desorption of protons at the oxygen-rich surface of a granular and porous NiO film. The surface electronic levels are then modified by the presence or absence of the O-H bonds, and the effect on the film electronic properties is discussed. A general discussion is also given of the current-limiting processes at the NiO film electrodes.

  5. Process for fabrication of metal oxide films

    SciTech Connect

    Tracy, C.E.; Benson, D.; Svensson, S.

    1990-07-17

    This invention is comprised of a method of fabricating metal oxide films from a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of metal oxides, e.g. electro-optically active transition metal oxides, at a high deposition rate. The presence of hydrogen during the plasma reaction enhances the deposition rate of the metal oxide. Various types of metal oxide films can be produced.

  6. Passivation effects of atomic-layer-deposited aluminum oxide

    NASA Astrophysics Data System (ADS)

    Kotipalli, R.; Delamare, R.; Poncelet, O.; Tang, X.; Francis, L. A.; Flandre, D.

    2013-09-01

    Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012-1013 cm-2) in combination with a low density of interface states (Dit). This paper investigates the passivation quality of thin (15 nm) Al2O3 films deposited by two different techniques: plasma-enhanced atomic layer deposition (PE-ALD) and Thermal atomic layer deposition (T-ALD). Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2) (20 nm), SiO2 (20 nm) deposited by plasma-enhanced chemical vapour deposition (PECVD) and hydrogenated amorphous silicon nitride (a-SiNx:H) (20 nm) also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS) capacitors were fabricated for Qf and Dit extraction through Capacitance-Voltage-Conductance (C-V-G) measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV). The influence of extracted C-V-G parameters (Qf,Dit) on the injection dependent lifetime measurements τ(Δn), and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

  7. Atomic layer deposition of the aluminum oxide-yttrium oxide pseudo-binary system

    NASA Astrophysics Data System (ADS)

    Rowland, Jason Conrad

    The growth of thin films of selected phases from the pseudo-binary Al 2O3-Y2O3 material system was demonstrated using atomic layer deposition (ALD). Specifically ALD growth of Al2O 3, Y2O3, Ce2O3, Y2 Al4O12 (Yttrium Aluminum Monoclinic - YAM), and Y3Al5O12 (Yttrium Aluminum Garnet - YAG) was accomplished. All films were grown using the same precursors: AlCl 3 at 105°C and H2O, Y(thd)3 [thd = 2,2,6,6-tetramethyl-3,5-heptanedione] at 140°C and O3, and Ce(acac)3 [acac = acetylacetonate] at 140°C, and O3. The Al2O3 films were grown at substrate temperatures from 295°C to 515°C. A surface-controlled growth temperature 'window' (ALD window) was found for Al 2O3 between 365°C to 465°C using AlCl3 and H2O. The resultant films grown at all temperatures were amorphous as characterized by X-ray diffraction, and showed a rough surface morphology. The growth rate was determined to be 1 A/cycle within the ALD 'window'. The thickness of films grown in the ALD 'window' varied linearly with the number of cycles. Films up to 1 microm thick were grown (10,000 cycles). The Y2O3 films were grown at substrate temperatures ranging from 200°C to 500°C. No surface-controlled growth temperature window could be determined using Y(thd)3 and O3. The resultant films were polycrystalline with a cubic structure and a smooth surface morphology. The growth rate was determined to be 3 pm/cycle at 350°C. Films up to 30 nm thick were grown (10,000 cycles). Atomic layer deposition of Ce2O3 thin films were also studied because Ce3+ is often used as a luminescent rare earth dopant in YAG and YAM. The Ce2O3 films were grown at substrate temperatures from 200°C to 500°C. No surface-controlled growth temperature window could be found using Ce(acac)3 and O 3. The resultant films had a rough surface morphology. Using X-ray photoelectron spectroscopy (XPS), it was determined that the Ce3+ oxidation state was present in the as-deposited films rather than Ce4+. When included in the growth process for

  8. Spotting 2D atomic layers on aluminum nitride thin films.

    PubMed

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers. PMID:26422387

  9. Spotting 2D atomic layers on aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Raghavan, Srinivasan

    2015-10-01

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  10. An XPS study of the stability of Fomblin Z25 on the native oxide of aluminum. [x ray photoelectron spectroscopy

    NASA Technical Reports Server (NTRS)

    Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

    1991-01-01

    Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum and sapphire surfaces, and their behavior at different temperatures was studied using x ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that the interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. Our conclusion is that the native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At high temperatures (150 C) degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formulation of a debris layer.

  11. X-ray photoelectron spectroscopy study of the stability of Fomblin Z25 on the native oxide of aluminum

    NASA Technical Reports Server (NTRS)

    Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

    1992-01-01

    Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum, and onto sapphire surfaces, and their behavior at different temperatures was studied using X-ray photoelectron spectroscopy and temperature desorption spectroscopy (TDS). The interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on the clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. The native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At higher temperatures (150 C), degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formation of a debris layer.

  12. Durability of self-assembled monolayers on aluminum oxide surface for determining surface wettability

    NASA Astrophysics Data System (ADS)

    Lee, Jaejun; Bong, Jihye; Ha, Young-Geun; Park, Sangyoon; Ju, Sanghyun

    2015-03-01

    The durable non-wettability of functionalized aluminum oxide (Al2O3) thin films coated with two different self-assembled monolayers (SAMs), phosphonic acid (HDF-PA) and trichlorosilane (HDF-S), was investigated by a water flow test method. After exposing the surface to 5 L of water droplets, the contact angle of HDF-S coated Al2O3 thin films remained at the initial value of ∼102.7°, while the contact angle of HDF-PA coated Al2O3 thin films decreased from an initial value of ∼99.9° to a value of ∼69.3°. Thermal annealing effect at various temperature post formation of the self-assembled HDF-PA on the Al2O3 were investigated and shown to enhance the durability of SAMs with a constant contact angle (∼100°) annealed at 100-150 °C.

  13. Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states

    SciTech Connect

    Mibus, M.; Zangari, G.; Jensen, C.; Hu, X.; Reed, M. L.; Knospe, C.

    2014-06-16

    The electronic and ionic transports in 32–56 nm thick anodic aluminum oxide films are investigated before and after a 1-h anneal at 200–400 °C in argon. Results are correlated to their defect density as measured by the Mott-Schottky technique. Solid state measurements show that electronic conduction upon annealing is hindered by an increase in the Schottky emission barrier, induced by a reduction in dopant density. Using an electrochemical contact, the films fail rapidly under cathodic polarization, unless defect density is decreased down to 10{sup 17} cm{sup −3}, resulting in a three order of magnitude reduction in current and no visible gas evolution. Under anodic polarization, the decrease in defect density delays the onset of ionic conduction as well as further oxide growth and failure.

  14. Development of topologically structured membranes of aluminum oxide

    NASA Astrophysics Data System (ADS)

    Bankova, A.; Videkov, V.; Tzaneva, B.

    2014-05-01

    In recent years, nanomembranes have become one of the most widely used construction material for ultrasensitive and ultrathin applications in micro-electromechanical systems (MEMS) and other sensor structures due to their remarkable mechanical properties. Among these, the mechanical stability is of particular importance. We present an approach to the analysis of the stability of nanostructured anodic aluminum oxide free membranes subjected to mechanical bending. The membranes tested were with a thickness of 500 nm to 15 urn in various topological shapes; we describe the technological schemes of their preparation. Bends were applied to membranes prepared by using a selective process of etching and anodizing. The results of the preparation of the membranes are discussed, together with the influence of the angle of deflection, and the number of bendings. The results obtained can be used in designing MEMS structures and sensors which use nanostructured anodic aluminum oxide.

  15. Formation of Nanoporous Anodic Alumina by Anodization of Aluminum Films on Glass Substrates.

    PubMed

    Lebyedyeva, Tetyana; Kryvyi, Serhii; Lytvyn, Petro; Skoryk, Mykola; Shpylovyy, Pavlo

    2016-12-01

    Our research was aimed at the study of aluminum films and porous anodic alumina (PAA) films in thin-film РАА/Al structures for optical sensors, based on metal-clad waveguides (MCWG). The results of the scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies of the structure of Al films, deposited by DC magnetron sputtering, and of PAA films, formed on them, are presented in this work.The study showed that the structure of the Al films is defined by the deposition rate of aluminum and the thickness of the film. We saw that under anodization in 0.3 M aqueous oxalic acid solution at a voltage of 40 V, the PAA film with a disordered array of pores was formed on aluminum films 200-600 nm thick, which were deposited on glass substrates with an ultra-thin adhesive Nb layer. The research revealed the formation of two differently sized types of pores. The first type of pores is formed on the grain boundaries of aluminum film, and the pores are directed perpendicularly to the surface of aluminum. The second type of pores is formed directly on the grains of aluminum. They are directed perpendicularly to the grain plains. There is a clear tendency to self-ordering in this type of pores. PMID:27083584

  16. Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

    NASA Astrophysics Data System (ADS)

    Sowers, A. T.; Christman, J. A.; Bremser, M. D.; Ward, B. L.; Davis, R. F.; Nemanich, R. J.

    1997-10-01

    Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 104 times the collector currents.

  17. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    SciTech Connect

    Wing, Waylin J.; Sadeghi, Seyed M. Gutha, Rithvik R.; Campbell, Quinn; Mao, Chuanbin

    2015-09-28

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  18. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    NASA Astrophysics Data System (ADS)

    Wing, Waylin J.; Sadeghi, Seyed M.; Gutha, Rithvik R.; Campbell, Quinn; Mao, Chuanbin

    2015-09-01

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  19. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM SUBSTRATES. PART I: CHARACTERIZATION OF FILMS AND FILM/SUBSTRATE INTERFACES

    EPA Science Inventory

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 Å in thickness) were deposited onto aluminum substrates (6111-T4 alloy) in radio frequency (RF) and microwave (MW) powered reactors to be used as primers for structural adhesive bonding. Processing variables such as sub...

  20. Tailoring oxidation of aluminum nanoparticles reinforced with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Sharma, Manjula; Sharma, Vimal

    2016-05-01

    In this report, the oxidation temperature and reaction enthalpy of Aluminum (Al) nanoparticles has been controlled by reinforcing with carbon nanotubes. The physical mixing method with ultrasonication was employed to synthesize CNT/Al nanocomposite powders. The micro-morphology of nanoconmposite powders has been analysed by scanning electron microscopy, energy dispersive spectroscopy, raman spectroscopy and X-ray diffraction techniques. The oxidation behavior of nanocomposite powders analyzed by thermogravimetry/differential scanning calorimertry showed improvement in the exothermic enthalpy. Largest exothermic enthalpy of-1251J/g was observed for CNT (4 wt%)/Al nanocomposite.

  1. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

    PubMed

    Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O

    2013-01-18

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa. PMID:23220817

  2. A nine-atom rhodium–aluminum oxide cluster oxidizes five carbon monoxide molecules

    PubMed Central

    Li, Xiao-Na; Zhang, Hua-Min; Yuan, Zhen; He, Sheng-Gui

    2016-01-01

    Noble metals can promote the direct participation of lattice oxygen of very stable oxide materials such as aluminum oxide, to oxidize reactant molecules, while the fundamental mechanism of noble metal catalysis is elusive. Here we report that a single atom of rhodium, a powerful noble metal catalyst, can promote the transfer of five oxygen atoms to oxidize carbon monoxide from a nine-atom rhodium–aluminum oxide cluster. This is a sharp improvement in the field of cluster science where the transfer of at most two oxygen atoms from a doped cluster is more commonly observed. Rhodium functions not only as the preferred trapping site to anchor and oxidize carbon monoxide by the oxygen atoms in direct connection with rhodium but also the primarily oxidative centre to accumulate the large amounts of electrons and the polarity of rhodium is ultimately transformed from positive to negative. PMID:27094921

  3. A nine-atom rhodium-aluminum oxide cluster oxidizes five carbon monoxide molecules.

    PubMed

    Li, Xiao-Na; Zhang, Hua-Min; Yuan, Zhen; He, Sheng-Gui

    2016-01-01

    Noble metals can promote the direct participation of lattice oxygen of very stable oxide materials such as aluminum oxide, to oxidize reactant molecules, while the fundamental mechanism of noble metal catalysis is elusive. Here we report that a single atom of rhodium, a powerful noble metal catalyst, can promote the transfer of five oxygen atoms to oxidize carbon monoxide from a nine-atom rhodium-aluminum oxide cluster. This is a sharp improvement in the field of cluster science where the transfer of at most two oxygen atoms from a doped cluster is more commonly observed. Rhodium functions not only as the preferred trapping site to anchor and oxidize carbon monoxide by the oxygen atoms in direct connection with rhodium but also the primarily oxidative centre to accumulate the large amounts of electrons and the polarity of rhodium is ultimately transformed from positive to negative. PMID:27094921

  4. Prediction of new thermodynamically stable aluminum oxides

    NASA Astrophysics Data System (ADS)

    Liu, Yue; Oganov, Artem R.; Wang, Shengnan; Zhu, Qiang; Dong, Xiao; Kresse, Georg

    2015-04-01

    Recently, it has been shown that under pressure, unexpected and counterintuitive chemical compounds become stable. Laser shock experiments (A. Rode, unpublished) on alumina (Al2O3) have shown non-equilibrium decomposition of alumina with the formation of free Al and a mysterious transparent phase. Inspired by these observations, we have explored the possibility of the formation of new chemical compounds in the system Al-O. Using the variable-composition structure prediction algorithm USPEX, in addition to the well-known Al2O3, we have found two extraordinary compounds Al4O7 and AlO2 to be thermodynamically stable in the pressure ranges 330-443 GPa and above 332 GPa, respectively. Both of these compounds at the same time contain oxide O2- and peroxide O22- ions, and both are insulating. Peroxo-groups are responsible for gap states, which significantly reduce the electronic band gap of both Al4O7 and AlO2.

  5. Prediction of new thermodynamically stable aluminum oxides.

    PubMed

    Liu, Yue; Oganov, Artem R; Wang, Shengnan; Zhu, Qiang; Dong, Xiao; Kresse, Georg

    2015-01-01

    Recently, it has been shown that under pressure, unexpected and counterintuitive chemical compounds become stable. Laser shock experiments (A. Rode, unpublished) on alumina (Al2O3) have shown non-equilibrium decomposition of alumina with the formation of free Al and a mysterious transparent phase. Inspired by these observations, we have explored the possibility of the formation of new chemical compounds in the system Al-O. Using the variable-composition structure prediction algorithm USPEX, in addition to the well-known Al2O3, we have found two extraordinary compounds Al4O7 and AlO2 to be thermodynamically stable in the pressure ranges 330-443 GPa and above 332 GPa, respectively. Both of these compounds at the same time contain oxide O(2-) and peroxide O2(2-) ions, and both are insulating. Peroxo-groups are responsible for gap states, which significantly reduce the electronic band gap of both Al4O7 and AlO2. PMID:25830780

  6. Prediction of new thermodynamically stable aluminum oxides

    PubMed Central

    Liu, Yue; Oganov, Artem R.; Wang, Shengnan; Zhu, Qiang; Dong, Xiao; Kresse, Georg

    2015-01-01

    Recently, it has been shown that under pressure, unexpected and counterintuitive chemical compounds become stable. Laser shock experiments (A. Rode, unpublished) on alumina (Al2O3) have shown non-equilibrium decomposition of alumina with the formation of free Al and a mysterious transparent phase. Inspired by these observations, we have explored the possibility of the formation of new chemical compounds in the system Al-O. Using the variable-composition structure prediction algorithm USPEX, in addition to the well-known Al2O3, we have found two extraordinary compounds Al4O7 and AlO2 to be thermodynamically stable in the pressure ranges 330-443 GPa and above 332 GPa, respectively. Both of these compounds at the same time contain oxide O2− and peroxide O22− ions, and both are insulating. Peroxo-groups are responsible for gap states, which significantly reduce the electronic band gap of both Al4O7 and AlO2. PMID:25830780

  7. Aluminum recycling from reactor walls: A source of contamination in a-Si:H thin films

    SciTech Connect

    Longeaud, C.; Ray, P. P.; Bhaduri, A.; Daineka, D.; Johnson, E. V.; Roca i Cabarrocas, P.

    2010-11-15

    In this article, the authors investigate the contamination of hydrogenated amorphous silicon thin films with aluminum recycled from the walls and electrodes of the deposition reactor. Thin films of hydrogenated amorphous silicon were prepared under various conditions by a standard radio frequency plasma enhanced chemical vapor deposition process in two reactors, the chambers of which were constructed of either aluminum or stainless steel. The authors have studied the electronic properties of these thin films and have found that when using an aluminum reactor chamber, the layers are contaminated with aluminum recycled from the chamber walls and electrode. This phenomenon is observed almost independently of the deposition conditions. The authors show that this contamination results in slightly p-doped films and could be detrimental to the deposition of device grade films. The authors also propose a simple way to control and eventually suppress this contamination.

  8. A preliminary study of ester oxidation on an aluminum surface using chemiluminescence

    NASA Technical Reports Server (NTRS)

    Jones, William R., Jr.; Meador, Michael A.; Morales, Wilfredo

    1987-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin-film micro-oxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing 10 to the minus 3rd power M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission (I sub max) was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period or the time to reach one-half of maximum intensity (t sub 1/2) was an inverse function of test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  9. A preliminary study of ester oxidation on an aluminum surface using chemiluminescence

    NASA Technical Reports Server (NTRS)

    Jones, W. R., Jr.; Meador, M. A.; Morales, W.

    1986-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin-film micro-oxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing 10 to the minus 3 power M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission (I sub max) was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period or the time to reach one-half of maximum intensity (t sub 1/2) was an inverse function of test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  10. Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films

    NASA Astrophysics Data System (ADS)

    Akiyama, Morito; Morofuji, Yukari; Kamohara, Toshihiro; Nishikubo, Keiko; Tsubai, Masayoshi; Fukuda, Osamu; Ueno, Naohiro

    2006-12-01

    We have investigated the high sensitive piezoelectric response of c-axis oriented aluminum nitride (AlN) thin films prepared on polyethylene terephthalate (PET) films. The AlN films were deposited using a radio frequency magnetron sputtering method at temperatures close to room temperature. The c axes of the AlN films were perpendicularly oriented to the PET film surfaces. The sensor consisting of the AlN and PET films is flexible like PET films and the electrical charge is linearly proportional to the stress within a wide range from 0to8.5MPa. The sensor can respond to the frequencies from 0.3 to over 100Hz and measures a clear human pulse wave form by holding the sensor between thumb and middle finger. The resolution of the pulse wave form is comparable to a sphygmomanometer at stress levels of 10kPa. We think that the origin of the high performance of the sensor is the deflection effect, the thin thickness and high elastic modulus of the AlN layer, and the thin thickness and low elastic modulus of the PET film.

  11. Formation of Nanoporous Anodic Alumina by Anodization of Aluminum Films on Glass Substrates

    NASA Astrophysics Data System (ADS)

    Lebyedyeva, Tetyana; Kryvyi, Serhii; Lytvyn, Petro; Skoryk, Mykola; Shpylovyy, Pavlo

    2016-04-01

    Our research was aimed at the study of aluminum films and porous anodic alumina (PAA) films in thin-film PAA/Al structures for optical sensors, based on metal-clad waveguides (MCWG). The results of the scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies of the structure of Al films, deposited by DC magnetron sputtering, and of PAA films, formed on them, are presented in this work.

  12. The role of stress in self-ordered porous anodic oxide formation and corrosion of aluminum

    NASA Astrophysics Data System (ADS)

    Capraz, Omer Ozgur

    The phenomenon of plastic flow induced by electrochemical reactions near room temperature is significant in porous anodic oxide (PAO) films, charging of lithium batteries and stress-corrosion cracking (SCC). As this phenomenon is poorly understood, fundamental insight into flow from our work may provide useful information for these problems. In-situ monitoring of the stress state allows direct correlation between stress and the current or potential, thus providing fundamental insight into technologically important deformation and failure mechanisms induced by electrochemical reactions. A phase-shifting curvature interferometry was designed to investigate the stress generation mechanisms on different systems. Resolution of our curvature interferometry was found to be ten times more powerful than that obtained by state-of-art multiple deflectometry technique and the curvature interferometry helps to resolve the conflicting reports in the literature. During this work, formation of surface patterns during both aqueous corrosion of aluminum and formation of PAO films were investigated. Interestingly, for both cases, stress induced plastic flow controls the formation of surface patterns. Pore formation mechanisms during anodizing of the porous aluminum oxide films was investigated . PAO films are formed by the electrochemical oxidation of metals such as aluminum and titanium in a solution where oxide is moderately soluble. They have been used extensively to design numerous devices for optical, catalytic, and biological and energy related applications, due to their vertically aligned-geometry, high-specific surface area and tunable geometry by adjusting process variables. These structures have developed empirically, in the absence of understanding the process mechanism. Previous experimental studies of anodizing-induced stress have extensively focused on the measurement of average stress, however the measurement of stress evolution during anodizing does not provide

  13. Naringin protects memory impairment and mitochondrial oxidative damage against aluminum-induced neurotoxicity in rats.

    PubMed

    Prakash, Atish; Shur, Bhargabi; Kumar, Anil

    2013-09-01

    Aluminum has been indicated in neurodegenerative disorders and naringin, a bioflavonoid has been used to reduce neurotoxic effects of aluminum against aluminum chloride-induced rats. Therefore, present study has been designed to explore the possible role of naringin against aluminum-induced cognitive dysfunction and oxidative damage in rats. Aluminum (100 mg/kg) and naringin (40 and 80 mg/kg) drug treatment were administered orally for six weeks to male wistar rats. Various behavioral performance tasks, biochemical, mitochondrial oxidative parameters, and aluminum concentration in the brain were assessed. Aluminum chloride treatment significantly caused cognitive dysfunction and mitochondria oxidative damage as compared to vehicle treated control group. Besides, aluminum chloride treatment significantly increased acetyl cholinesterase activity and aluminum concentration in the brain as compared to sham. Chronic administration of naringin significantly improved cognitive performance and attenuated mitochondria oxidative damage, acetyl cholinesterase activity, and aluminum concentration in aluminum-treated rats as compared to control rats. Results of the study demonstrate neuroprotective potential of naringin against aluminum chloride-induced cognitive dysfunction and mitochondrial oxidative damage. PMID:23510099

  14. Screen Cage Ion Plating (SCIP) and scratch testing of polycrystalline aluminum oxide

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis; Sliney, Harold E.; Deadmore, Daniel L.

    1992-01-01

    A screen cage ion plating (SCIP) technique was developed to apply silver films on electrically nonconducting aluminum oxide. It is shown that SCIP has remarkable throwing power; surfaces to be coated need not be in direct line of sight with the evaporation source. Scratch tests, employing a diamond stylus with a 200 micro m radius tip, were performed on uncoated and on silver coated alumina. Subsequent surface analysis show that a significant amount of silver remains on the scratched surfaces, even in areas where high stylus load produced severe crack patterns in the ceramic. Friction coefficients were lowered during the scratch tests on the coated alumina indicating that this modification of the ion planting process should be useful for applying lubricating films of soft metals to electrical insulating materials. The very good throwing power of SCIP also strongly suggests general applicability of this process in other areas of technology, e.g., electronics, in addition to tribology.

  15. The effects of aluminum oxide on inertial welding of aluminum in space applications

    NASA Astrophysics Data System (ADS)

    Smith, Michael H.

    1992-05-01

    Inertial friction welding of 2219 aluminum alloy studs to 2219 aluminum alloy plates is investigated in air and in an argon atmosphere to determine the effects of an intact oxide layer on weld quality. Scratch-brushing of plates and studs was performed in an argon atmosphere to break up the oxide layer and prevent reformation prior to testing. Argon was used to simulate the near-oxygen free space environment. Weld quality was determined by a bend test and by measurement of the fraction of the weld surface area that was dimpled in appearance following fracture of the weld. The fundamental theories of friction and wear that are applicable to friction welding are reviewed. A brief survey of current welding methods that may have application in space is presented, as well as a discussion of their feasibility and limitations. Characteristics of the space station are discussed as well as their consequences on welding in space. A qualitative model of the process of inertial friction welding based on the theories of friction and observations of welds and weld fractures is developed and presented.

  16. Chemical dynamics of nano-aluminum/iodine (V) oxide

    NASA Astrophysics Data System (ADS)

    Little, B. K.; Welle, E. J.; Emery, S. B.; Bogle, M. B.; Ashley, V. L.; Schrand, A. M.; Lindsay, C. M.

    2014-05-01

    This proceeding describes our preliminary efforts in studying highly reactive composites containing crystalline iodine (V) oxide and nano-aluminum (nAl) with various amounts of cyclohexanone in the form of powders. In this study we report upon the application of physiochemical techniques such as thermal gravimetric analysis (TGA), differential scanning calorimetry (DSC), powdered X-ray diffraction (PXRD), and electron microscopy for chemical characterization of powder composites. In addition dynamic measurements were conducted by recording pressure trace profiles during a combustion event. These various techniques were employed to examine these energetic materials (EMs) and associate changes to the chemical dynamics of the composite with the additive.

  17. Aircraft water vapor measurements utilizing an aluminum oxide hygrometer

    NASA Technical Reports Server (NTRS)

    Hilsenrath, E.

    1973-01-01

    A hygrometer for water vapor measurements from an aircraft has been developed. An aluminum oxide hygrometer mounted in an aircraft Rosemount air temperature scoop was flown on NASA and USAF aircraft. Water vapor measurements were conducted up to 40,000 feet with penetration into the stratosphere. Good agreement was obtained with simultaneously flown remote sounders of water vapor. During transcontinental flights the hygrometer demonstrated adequate response to measure the natural variability of water vapor near the tropopause. Rapid response was demonstrated in pursuit of the jet wake of an F-104 at 35,000 feet.

  18. Aircraft water vapor measurements utilizing an aluminum oxide hygrometer

    NASA Technical Reports Server (NTRS)

    Hilsenrath, E.

    1974-01-01

    A hygrometer for water vapor measurements from an aircraft was developed. An aluminum oxide hygrometer mounted in an aircraft Rosemount air temperature scoop was flown on the NASA Convair 990 and on a USAF B-57 aircraft. Water vapor measurements from the Convair 990 were conducted up to 40,000 ft with penetration into the stratosphere. Good agreement was obtained with simultaneously flown remote sounders of water vapor. During transcontinental flights the hygrometer demonstrated adequate response to measure the natural variability of water vapor near the tropopause. Rapid response was demonstrated in pursuit of the jet wake of an F-104 at 35,000 ft.

  19. Local epitaxial growth of aluminum nitride and molybdenum thin films in fiber texture using aluminum nitride interlayer

    SciTech Connect

    Kamohara, Toshihiro; Akiyama, Morito; Ueno, Naohiro; Nonaka, Kazuhiro; Kuwano, Noriyuki

    2006-08-14

    The authors have found the local epitaxial growth of aluminum nitride (AlN) and molybdenum (Mo) films in fiber texture, although the interface between the AlN and Mo films has different crystal symmetries. The local heteroepitaxial relationship is (0001)AlN[2110](parallel sign)(110)Mo[111](parallel sign)(0001)AlN[2110]. The AlN films changes from nonequiaxed microstructures to equiaxed columnar structures. The authors think that the AlN interlayer is effective in decreasing the crystallization energy of the Mo electrode due to the coherent heteroepitaxial nucleation. It is interesting that the local heteroepitaxial relationship does not satisfy the criteria for heteroepitaxial growth.

  20. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  1. Aluminum oxide coating for post-growth photo emission wavelength tuning of indium phosphide nanowire networks

    NASA Astrophysics Data System (ADS)

    Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan; Kobayashi, Nobuhiko P.

    2013-09-01

    Semiconductor-oxide nanostructure devices can be a very intriguing material platform if optoelectronic properties of the original semiconductor nanostructures can be tuned by explicitly controlling properties of the oxide coating. This paper describes our finding that optical properties of semiconductor nanowires can be tuned by depositing a thin layer of metal oxide. In this experiment, indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst. The nanowires formed three-dimensional nanowire networks from which collective optical properties were obtained. The nanowire network was coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. We observed continuous blue shift in photoluminescence spectra when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from an intrinsic negative fixed charge from the oxide surface. Samples were further characterized by scanning electron microscopy, transmission electron microscopy, and selective area diffractometry in an attempt to explain the physical mechanisms for the blue shift.

  2. An Analysis of Mechanical Properties of Anodized Aluminum Film at High Stress

    NASA Astrophysics Data System (ADS)

    Zhao, Xixi; Wei, Guoying; Yu, Yundan; Guo, Yuemei; Zhang, Ao

    2015-10-01

    In this paper, a new environmental-friendly electrolyte containing sulfuric acid and tartaric acid has been used as the substitute of chromic acid for anodization. The work discussed the influence of anodizing voltages on the fatigue life of anodized Al 2024-T3 by performing fatigue tests with 0.1 stress ratio (R) at 320 MPa. Meanwhile the fatigue cycles to failure, yield strength, tensile strength and fracture surface of anodic films at different conditions were investigated. The results showed that the fatigue life of anodized and sealed specimens reduced a lot compared to aluminum alloy, which can be attributed to the crack sites initiated at the oxide layer. The fracture surface analyses also revealed that the number of crack initiation sites enlarged with the increase of anodizing voltage.

  3. Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

    SciTech Connect

    Puurunen, Riikka L.; Vandervorst, Wilfried; Besling, Wim F. A.; Richard, Olivier; Bender, Hugo; Conard, Thierry; Zhao Chao; Delabie, Annelies; Caymax, Matty; Gendt, Stefan de; Heyns, Marc; Viitanen, Minna M.; Ridder, Marco de; Brongersma, Hidde H.; Tamminga, Yde; Dao, Thuy; Win, Toon de; Verheijen, Marcel; Kaiser, Monja; Tuominen, Marko

    2004-11-01

    Atomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. For such thicknesses, the growth mode, defining how the material is arranged on the surface during the growth, is of critical importance. In this work, the growth mode of the zirconium tetrachloride/water and the trimethyl aluminum/water ALD process on hydrogen-terminated silicon was investigated by combining information on the total amount of material deposited with information on the surface fraction of the material. The total amount of material deposited was measured by Rutherford backscattering, x-ray fluorescence, and inductively coupled plasma-optical emission spectroscopy, and the surface fractions by low-energy ion scattering. Growth mode modeling was made assuming two-dimensional growth or random deposition (RD), with a 'shower model' of RD recently developed for ALD. Experimental surface fractions of the ALD-grown zirconium oxide and aluminum oxide films were lower than the surface fractions calculated assuming RD, suggesting the occurrence of island growth. Island growth was confirmed with transmission electron microscopy (TEM) measurements, from which the island size and number of islands per unit surface area could also be estimated. The conclusion of island growth for the aluminum oxide deposition on hydrogen-terminated silicon contradicts earlier observations. In this work, physical aluminum oxide islands were observed in TEM after 15 ALD reaction cycles. Earlier, thicker aluminum oxide layers have been analyzed, where islands have not been observed because they have already coalesced to form a continuous film. The unreactivity of hydrogen-terminated silicon surface towards the ALD reactants, except for reactive defect areas, is proposed as the origin of island growth. Consequently, island growth can be regarded as 'undesired surface-selective ALD'.

  4. Interfacial charging phenomena of aluminum (hydr)oxides

    SciTech Connect

    Hiemstra, T.; Yong, H.; Van Riemsdijk, W.H.

    1999-08-31

    The interfacial charging of Al(OH){sub 3} (gibbsite and bayerite) and Al{sub 2}O{sub 3} has been studied. For Al(OH){sub 3} it can be shown that the very strong variation in charging behavior for different preparations is related to the relative presence of differently reacting crystal planes. The edge faces of the hexagonal gibbsite crystals are proton reactive over the whole pH range, in contrast to the 001 plane, which is mainly uncharged below pH = 10. On this 001 face only doubly coordinated surface groups are found, in contrast to the edges which also have singly coordinated surface groups. The results are fully in agreement with the predictions of the Multi site complexation (MUSIC) model. The proton adsorption, electrolyte ion adsorption, and shift of the IEP of gibbsite and aluminum oxide have been modeled simultaneously. For gibbsite, the ion pair formation of Na is larger than that of Cl, as is evidenced by modeling the experimentally observed upward shift on the IEP and charge reversal at high electrolyte concentrations. All these experimental results can be satisfactorily modeled with the MUSIC model, including the experimental surface potential of aluminum oxide (ISFET).

  5. Corrosion evaluation of zirconium doped oxide coatings on aluminum formed by plasma electrolytic oxidation.

    PubMed

    Bajat, Jelena; Mišković-Stanković, Vesna; Vasilić, Rastko; Stojadinović, Stevan

    2014-01-01

    The plasma electrolytic oxidation (PEO) of aluminum in sodium tungstate (Na(2)WO(4) · (2)H(2)O) and Na(2)WO(4) · (2)H(2)O doped with Zr was analyzed in order to obtain oxide coatings with improved corrosion resistance. The influence of current density in PEO process and anodization time was investigated, as well as the influence of Zr, with the aim to find out how they affect the chemical content, morphology, surface roughness, and corrosion stability of oxide coatings. It was shown that the presence of Zr increases the corrosion stability of oxide coatings for all investigated PEO times. Evolution of EIS spectra during the exposure to 3% NaCl, as a strong corrosive agent, indicated the highest corrosion stability for PEO coating formed on aluminum at 70 mA/cm(2) for 2 min in a zirconium containing electrolyte. PMID:25125114

  6. Nanostructured lithium-aluminum alloy electrodes for lithium-ion batteries.

    SciTech Connect

    Hudak, Nicholas S.; Huber, Dale L.

    2010-12-01

    Electrodeposited aluminum films and template-synthesized aluminum nanorods are examined as negative electrodes for lithium-ion batteries. The lithium-aluminum alloying reaction is observed electrochemically with cyclic voltammetry and galvanostatic cycling in lithium half-cells. The electrodeposition reaction is shown to have high faradaic efficiency, and electrodeposited aluminum films reach theoretical capacity for the formation of LiAl (1 Ah/g). The performance of electrodeposited aluminum films is dependent on film thickness, with thicker films exhibiting better cycling behavior. The same trend is shown for electron-beam deposited aluminum films, suggesting that aluminum film thickness is the major determinant in electrochemical performance regardless of deposition technique. Synthesis of aluminum nanorod arrays on stainless steel substrates is demonstrated using electrodeposition into anodic aluminum oxide templates followed by template dissolution. Unlike nanostructures of other lithium-alloying materials, the electrochemical performance of these aluminum nanorod arrays is worse than that of bulk aluminum.

  7. Friction reducing behavior of stearic acid film on a textured aluminum substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Quan; Wan, Yong; Li, Yang; Yang, Shuyan; Yao, Wenqing

    2013-09-01

    A simple two-step process was developed to render the aluminum hydrophobicity with lower friction. The textured aluminum substrate was firstly fabricated by immersed in a sodium hydroxide solution at 100 °C for 1 h. Stearic acid film was then deposited to acquire high hydrophobicity. Scanning electron microscopy, IR spectroscopy and water contact angle measurements were used to analyze the morphological features, chemical structure and hydrophobicity of prepared samples, respectively. Moreover, the friction reducing behavior of the organic-inorganic composite film on aluminum sliding against steel was evaluated in a ball-on-plate configuration. It was found that the stearic acid film on the textured aluminum led to decreased friction with significantly extended life.

  8. Effects of substrate temperatures and deposition rates on properties of aluminum fluoride thin films in deep-ultraviolet region.

    PubMed

    Sun, Jian; Li, Xu; Zhang, Weili; Yi, Kui; Shao, Jianda

    2012-12-10

    Aluminum fluoride (AlF(3)) is a low-refractive-index material widely used in coatings for deep-ultraviolet (DUV) optical systems, especially 193 nm laser systems. Low optical loss and stability are essential for film application. In this study, AlF(3)> thin films were prepared by thermal evaporation with a resistive heating boat. The effects of substrate temperatures and deposition rates on the optical properties in vacuum and in air, composition, and microstructures were discussed respectively. In vacuum the deposition parameters directly influenced the microstructures that determined the refractive index. When the films were exposed to air, aluminum oxide (Al(2)O(3)) formed in the films with water adsorption. Thus the refractive index increased and a nonmonotonic changing trend of the refractive index with substrate temperature was observed. The Al(2)O(3) was also found to be conductive to reducing absorption loss. AlF(3) films prepared at a high substrate temperature and deposition rate could yield stable structures with large optical loss. PMID:23262545

  9. Aluminum powder metallurgy processing

    NASA Astrophysics Data System (ADS)

    Flumerfelt, Joel Fredrick

    In recent years, the aluminum powder industry has expanded into non-aerospace applications. However, the alumina and aluminum hydroxide in the surface oxide film on aluminum powder require high cost powder processing routes. A driving force for this research is to broaden the knowledge base about aluminum powder metallurgy to provide ideas for fabricating low cost aluminum powder components. The objective of this dissertation is to explore the hypothesis that there is a strong linkage between gas atomization processing conditions, as-atomized aluminum powder characteristics, and the consolidation methodology required to make components from aluminum powder. The hypothesis was tested with pure aluminum powders produced by commercial air atomization commercial inert gas atomization and gas atomization reaction synthesis (GARS). The commercial atomization methods are bench marks of current aluminum powder technology. The GARS process is a laboratory scale inert gas atomization facility. A benefit of using pure aluminum powders is an unambiguous interpretation of the results without considering the effects of alloy elements. A comparison of the GARS aluminum powders with the commercial aluminum powders showed the former to exhibit superior powder characteristics. The powders were compared in terms of size and shape, bulk chemistry, surface oxide chemistry and structure, and oxide film thickness. Minimum explosive concentration measurements assessed the dependence of explosibility hazard on surface area, oxide film thickness, and gas atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization oxidation of aluminum powder. An Al-Ti-Y GARS alloy exposed in ambient air at different temperatures revealed the effect of reactive alloy elements on post-atomization powder oxidation. The pure aluminum powders were consolidated by two different routes, a

  10. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    SciTech Connect

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U.; Nicolay, P.

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  11. Quaternary polymethacrylate-magnesium aluminum silicate films: Water uptake kinetics and film permeability.

    PubMed

    Rongthong, Thitiphorn; Sungthongjeen, Srisagul; Siepmann, Florence; Siepmann, Juergen; Pongjanyakul, Thaned

    2015-07-25

    The aim of this study was to investigate the impact of the addition of different amounts of magnesium aluminum silicate (MAS) to polymeric films based on quaternary polymethacrylates (QPMs, here Eudragit RS and RL). MAS contains negatively charged SiO(-) groups, while QPM contains positively charged quaternary ammonium groups. The basic idea is to be able to provide desired water and drug permeability by simply varying the amount of added MAS. Thin, free films of varying composition were prepared by casting and exposed to 0.1M HCl and pH 6.8 phosphate buffer. The water uptake kinetics and water vapor permeability of the systems were determined gravimetrically. The transport of propranolol HCl, acetaminophen, methyl-, ethyl- and propylparaben across thin films was studied using side-by-side diffusion cells. A numerical solution of Fick's second law of diffusion was applied to determine the apparent compound diffusion coefficients, partition coefficients between the bulk fluids and the films as well as the apparent film permeability for these compounds. The addition of MAS resulted in denser inner film structures, at least partially due to ionic interactions between the positively charged quaternary ammonium groups and the negatively charged SiO(-) groups. This resulted in lower water uptake, reduced water vapor permeability and decreasing apparent compound diffusivities. In contrast, the affinity of the investigated drugs and parabens to the films substantially increased upon MAS addition. The obtained new knowledge can be helpful for the development of novel coating materials (based on QPM-MAS blends) for controlled-release dosage forms. PMID:26004005

  12. The effect of plasma electrolytic oxidation on the mean stress sensitivity of the fatigue life of the 6082 aluminum alloy

    NASA Astrophysics Data System (ADS)

    Winter, L.; Morgenstern, R.; Hockauf, K.; Lampke, T.

    2016-03-01

    In this work the mean stress influence on the high cycle fatigue behavior of the plasma electrolytic oxidized (PEO) 6082 aluminum alloy (AlSi1MgMn) is investigated. The present study is focused on the fatigue life time and the susceptibility of fatigue-induced cracking of the oxide coating and their dependence on the applied mean stress. Systematic work is done comparing conditions with and without PEO treatment, which have been tested using three different load ratios. For the uncoated substrate the cycles to failure show a significant dependence on the mean stress, which is typical for aluminum alloys. With increased load ratio and therefore increased mean stress, the fatigue strength decreases. The investigation confirms the well-known effect of PEO treatment on the fatigue life: The fatigue strength is significantly reduced by the PEO process, compared to the uncoated substrate. However, also the mean stress sensitivity of the fatigue performance is reduced. The fatigue limit is not influenced by an increasing mean stress for the PEO treated conditions. This effect is firstly shown in these findings and no explanation for this effect can be found in literature. Supposedly the internal compressive stresses and the micro-cracks in the oxide film have a direct influence on the crack initiation and growth from the oxide film through the interface and in the substrate. Contrary to these findings, the susceptibility of fatigue-induced cracking of the oxide coating is influenced by the load ratio. At tension-tension loading a large number of cracks, which grow partially just in the aluminum substrate, are present. With decreasing load ratio to alternating tension-compression stresses, the crack number and length increases and shattering of the oxide film is more pronounced due to the additional effective compressive part of the load cycle.

  13. Glass film structure of grain-oriented silicon steel using aluminum nitride as an inhibitor

    SciTech Connect

    Fujii, H.; Yamazaki, S.; Nagashima, T.; Masui, H. . Steel Research Labs.); Kobayashi, H. . Advanced Materials and Technology); Shiozaki, M. )

    1994-04-01

    The composition and structure of glass (silicate) film formed during secondary recrystallization annealing of grain-oriented 3% Si steel using aluminum nitride as an inhibitor was investigated. The glass film consisted of spinel (MgO[center dot]Al[sub 2]O[sub 3]) and forsterite [2(MgO)[center dot]SiO[sub 2

  14. Silicon oxide films grown in microwave discharge

    NASA Technical Reports Server (NTRS)

    Kraitchman, J.

    1968-01-01

    Silicon oxide films thicker than 1000 angstrom are produced in the dense plasma of a microwave discharge. The oxide growth is characterized by a rate limiting diffusion process modified by sputtering effects produced by the discharge. Silicon is rapidly oxidized at temperatures estimated to be 500 degrees C or lower.

  15. Astaxanthin ameliorates aluminum chloride-induced spatial memory impairment and neuronal oxidative stress in mice.

    PubMed

    Al-Amin, Md Mamun; Reza, Hasan Mahmud; Saadi, Hasan Mahmud; Mahmud, Waich; Ibrahim, Abdirahman Adam; Alam, Musrura Mefta; Kabir, Nadia; Saifullah, A R M; Tropa, Sarjana Tarannum; Quddus, A H M Ruhul

    2016-04-15

    Aluminum chloride induces neurodegenerative disease in animal model. Evidence suggests that aluminum intake results in the activation of glial cells and generation of reactive oxygen species. By contrast, astaxanthin is an antioxidant having potential neuroprotective activity. In this study, we investigate the effect of astaxanthin on aluminum chloride-exposed behavioral brain function and neuronal oxidative stress (OS). Male Swiss albino mice (4 months old) were divided into 4 groups: (i) control (distilled water), (ii) aluminum chloride, (iii) astaxanthin+aluminum chloride, and (iv) astaxanthin. Two behavioral tests; radial arm maze and open field test were conducted, and OS markers were assayed from the brain and liver tissues following 42 days of treatment. Aluminum exposed group showed a significant reduction in spatial memory performance and anxiety-like behavior. Moreover, aluminum group exhibited a marked deterioration of oxidative markers; lipid peroxidation (MDA), nitric oxide (NO), glutathione (GSH) and advanced oxidation of protein products (AOPP) in the brain. To the contrary, co-administration of astaxanthin and aluminum has shown improved spatial memory, locomotor activity, and OS. These results indicate that astaxanthin improves aluminum-induced impaired memory performances presumably by the reduction of OS in the distinct brain regions. We suggest a future study to determine the underlying mechanism of astaxanthin in improving aluminum-exposed behavioral deficits. PMID:26927754

  16. Effect of grain size on the melting point of confined thin aluminum films

    SciTech Connect

    Wejrzanowski, Tomasz; Lewandowska, Malgorzata; Sikorski, Krzysztof; Kurzydlowski, Krzysztof J.

    2014-10-28

    The melting of aluminum thin film was studied by a molecular dynamics (MD) simulation technique. The effect of the grain size and type of confinement was investigated for aluminum film with a constant thickness of 4 nm. The results show that coherent intercrystalline interface suppress the transition of solid aluminum into liquid, while free-surface gives melting point depression. The mechanism of melting of polycrystalline aluminum thin film was investigated. It was found that melting starts at grain boundaries and propagates to grain interiors. The melting point was calculated from the Lindemann index criterion, taking into account only atoms near to grain boundaries. This made it possible to extend melting point calculations to bigger grains, which require a long time (in the MD scale) to be fully molten. The results show that 4 nm thick film of aluminum melts at a temperature lower than the melting point of bulk aluminum (933 K) only when the grain size is reduced to 6 nm.

  17. Experimental study to validate a model of hillock{close_quote}s formation in aluminum thin films

    SciTech Connect

    Genin, F.Y.; Siekhaus, W.J.

    1996-04-01

    The growth of holes and hillocks in thin films has been reported extensively and for a multitude of film{endash}substrate systems. A recently developed model [F. Y. G{acute e}nin, J. Appl. Phys. {bold 77}, 5130 (1995)] which analyzes the formation of a ridge at a traveling grain boundary due to stress and capillarity driving forces provides a quantitative description of the growth of the hillocks. In order to test the model, the surface morphology of aluminum thin films deposited on oxidized silicon substrates and annealed at 450{degree}C in argon is investigated; the profiles of thermal hillocks are measured by atomic force microscopy. The comparison shows excellent agreement between modeled and experimental profiles. {copyright}{ital 1996 American Institute of Physics.}

  18. A method of producing high quality oxide and related films on surfaces

    SciTech Connect

    Ruckman, M.W.; Strongin, M. ); Gao, Yongli . Dept. of Physics and Astronomy)

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.

  19. A method of producing high quality oxide and related films on surfaces

    NASA Technical Reports Server (NTRS)

    Ruckman, Mark W.; Strongin, Myron; Gao, Yongli

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on molecular beam epitaxy (MBE) grown GaAS(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia, or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid to form the desired compound or a precursor that can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities, and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE systems. Ongoing research using the same apparatus suggests that photon or electron irradiation could be used to promote the reactions needed to produce the intended material.

  20. A method of producing high quality oxide and related films on surfaces

    SciTech Connect

    Ruckman, M.W.; Strongin, M.; Gao, Yongli

    1991-12-31

    Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.

  1. Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

    NASA Technical Reports Server (NTRS)

    Deluca, J. J. (Inventor)

    1979-01-01

    An element comprising sapphire, ruby or blue sapphire can be bonded to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

  2. Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

    NASA Technical Reports Server (NTRS)

    Deluca, J. J. (Inventor)

    1975-01-01

    Bonding of an element comprising sapphire, ruby or blue sapphire to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide is discussed. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

  3. Organic solar cells on indium tin oxide and aluminum doped zinc oxide anodes

    NASA Astrophysics Data System (ADS)

    Schulze, Kerstin; Maennig, Bert; Leo, Karl; Tomita, Yuto; May, Christian; Hüpkes, Jürgen; Brier, Eduard; Reinold, Egon; Bäuerle, Peter

    2007-08-01

    The authors compare organic solar cells using two different transparent conductive oxides as anode: indium tin oxide (ITO) and three kinds of aluminum doped zinc oxide (ZAO). These anodes with different work functions are used for small molecule photovoltaic devices based on an oligothiophene derivative as donor and fullerene C60 as acceptor molecule. It turns out that cells on ITO and ZAO have virtually identical properties. In particular, the authors demonstrate that the work function of the anode does not influence the Voc of the photovoltaic device due to the use of doped transport layers.

  4. Fano resonance in anodic aluminum oxide based photonic crystals

    PubMed Central

    Shang, Guo Liang; Fei, Guang Tao; Zhang, Yao; Yan, Peng; Xu, Shao Hui; Ouyang, Hao Miao; De Zhang, Li

    2014-01-01

    Anodic aluminum oxide based photonic crystals with periodic porous structure have been prepared using voltage compensation method. The as-prepared sample showed an ultra-narrow photonic bandgap. Asymmetric line-shape profiles of the photonic bandgaps have been observed, which is attributed to Fano resonance between the photonic bandgap state of photonic crystal and continuum scattering state of porous structure. And the exhibited Fano resonance shows more clearly when the sample is saturated ethanol gas than air-filled. Further theoretical analysis by transfer matrix method verified these results. These findings provide a better understanding on the nature of photonic bandgaps of photonic crystals made up of porous materials, in which the porous structures not only exist as layers of effective-refractive-index material providing Bragg scattering, but also provide a continuum light scattering state to interact with Bragg scattering state to show an asymmetric line-shape profile. PMID:24398625

  5. Solid propellant exhausted aluminum oxide and hydrogen chloride - Environmental considerations

    NASA Technical Reports Server (NTRS)

    Cofer, W. R., III; Winstead, E. L.; Purgold, G. C.; Edahl, R. A.

    1993-01-01

    Measurements of gaseous hydrogen chloride (HCl) and particulate aluminum oxide (Al2O3) were made during penetrations of five Space Shuttle exhaust clouds and one static ground test firing of a shuttle booster. Instrumented aircraft were used to penetrate exhaust clouds and to measure and/or collect samples of exhaust for subsequent analyses. The focus was on the primary solid rocket motor exhaust products, HCl and Al2O3, from the Space Shuttle's solid boosters. Time-dependent behavior of HCl was determined for the exhaust clouds. Composition, morphology, surface chemistry, and particle size distributions were determined for the exhausted Al2O3. Results determined for the exhaust cloud from the static test firing were complicated by having large amounts of entrained alkaline ground debris (soil) in the lofted cloud. The entrained debris may have contributed to neutralization of in-cloud HCl.

  6. Enhanced photocatalytic activity of electrochemically synthesized aluminum oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pathania, Deepak; Katwal, Rishu; Kaur, Harpreet

    2016-03-01

    In this study, aluminum oxide (Al2O3) nanoparticles (NPs) were synthesized via an electrochemical method. The effects of reaction parameters such as supporting electrolytes, solvent, current and electrolysis time on the shape and size of the resulting NPs were investigated. The Al2O3 NPs were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, thermogravimetric analysis/differential thermal analysis, energy-dispersive X-ray analysis, and ultraviolet-visible spectroscopy. Moreover, the Al2O3 NPs were explored for photocatalytic degradation of malachite green (MG) dye under sunlight irradiation via two processes: adsorption followed by photocatalysis; coupled adsorption and photocatalysis. The coupled process exhibited a higher photodegradation efficiency (45%) compared to adsorption followed by photocatalysis (32%). The obtained kinetic data was well fitted using a pseudo-first-order model for MG degradation.

  7. Single-crystalline aluminum film for ultraviolet plasmonic nanolasers.

    PubMed

    Chou, Bo-Tsun; Chou, Yu-Hsun; Wu, Yen-Mo; Chung, Yi-Cheng; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

    2016-01-01

    Significant advances have been made in the development of plasmonic devices in the past decade. Plasmonic nanolasers, which display interesting properties, have come to play an important role in biomedicine, chemical sensors, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly those operating in the ultraviolet regime, are extremely sensitive to the metal and interface quality. Thus, these factors have a significant bearing on the development of ultraviolet plasmonic devices. Here, by addressing these material-related issues, we demonstrate a low-threshold, high-characteristic-temperature metal-oxide-semiconductor ZnO nanolaser that operates at room temperature. The template for the ZnO nanowires consists of a flat single-crystalline Al film grown by molecular beam epitaxy and an ultrasmooth Al2O3 spacer layer synthesized by atomic layer deposition. By effectively reducing the surface plasmon scattering and metal intrinsic absorption losses, the high-quality metal film and the sharp interfaces formed between the layers boost the device performance. This work should pave the way for the use of ultraviolet plasmonic nanolasers and related devices in a wider range of applications. PMID:26814581

  8. Single-crystalline aluminum film for ultraviolet plasmonic nanolasers

    NASA Astrophysics Data System (ADS)

    Chou, Bo-Tsun; Chou, Yu-Hsun; Wu, Yen-Mo; Chung, Yi-Cheng; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

    2016-01-01

    Significant advances have been made in the development of plasmonic devices in the past decade. Plasmonic nanolasers, which display interesting properties, have come to play an important role in biomedicine, chemical sensors, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly those operating in the ultraviolet regime, are extremely sensitive to the metal and interface quality. Thus, these factors have a significant bearing on the development of ultraviolet plasmonic devices. Here, by addressing these material-related issues, we demonstrate a low-threshold, high-characteristic-temperature metal-oxide-semiconductor ZnO nanolaser that operates at room temperature. The template for the ZnO nanowires consists of a flat single-crystalline Al film grown by molecular beam epitaxy and an ultrasmooth Al2O3 spacer layer synthesized by atomic layer deposition. By effectively reducing the surface plasmon scattering and metal intrinsic absorption losses, the high-quality metal film and the sharp interfaces formed between the layers boost the device performance. This work should pave the way for the use of ultraviolet plasmonic nanolasers and related devices in a wider range of applications.

  9. Single-crystalline aluminum film for ultraviolet plasmonic nanolasers

    PubMed Central

    Chou, Bo-Tsun; Chou, Yu-Hsun; Wu, Yen-Mo; Chung, Yi-Cheng; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

    2016-01-01

    Significant advances have been made in the development of plasmonic devices in the past decade. Plasmonic nanolasers, which display interesting properties, have come to play an important role in biomedicine, chemical sensors, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly those operating in the ultraviolet regime, are extremely sensitive to the metal and interface quality. Thus, these factors have a significant bearing on the development of ultraviolet plasmonic devices. Here, by addressing these material-related issues, we demonstrate a low-threshold, high-characteristic-temperature metal-oxide-semiconductor ZnO nanolaser that operates at room temperature. The template for the ZnO nanowires consists of a flat single-crystalline Al film grown by molecular beam epitaxy and an ultrasmooth Al2O3 spacer layer synthesized by atomic layer deposition. By effectively reducing the surface plasmon scattering and metal intrinsic absorption losses, the high-quality metal film and the sharp interfaces formed between the layers boost the device performance. This work should pave the way for the use of ultraviolet plasmonic nanolasers and related devices in a wider range of applications. PMID:26814581

  10. Electrochromism in copper oxide thin films

    SciTech Connect

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  11. Phosphorous and aluminum gettering in Silicon-Film{trademark} Product II material

    SciTech Connect

    Cotter, J.E.; Barnett, A.M.; Hall, R.B.

    1995-08-01

    Gettering processes are being developed for the Silicon-Film{trademark} Product II solar cell structure. These processes have been developed specifically for films of silicon grown on dissimilar substrates with barrier layers. Gettering with both phosphorous- and aluminum-based processing sequences has resulted in enhancement of minority carrier diffusion length. Long diffusion lengths have allowed the characterization of light trapping in thin films of silicon grown on barrier-coated substrates.

  12. Biodistribution and toxicity of spherical aluminum oxide nanoparticles.

    PubMed

    Park, Eun-Jung; Lee, Gwang-Hee; Yoon, Cheolho; Jeong, Uiseok; Kim, Younghun; Cho, Myung-Haing; Kim, Dong-Wan

    2016-03-01

    With the rapid development of the nano-industry, concerns about their potential adverse health effects have been raised. Thus, ranking accurately their toxicity and prioritizing for in vivo testing through in vitro toxicity test is needed. In this study, we used three types of synthesized aluminum oxide nanoparticles (AlONPs): γ-aluminum oxide hydroxide nanoparticles (γ-AlOHNPs), γ- and α-AlONPs. All three AlONPs were spherical, and the surface area was the greatest for γ-AlONPs, followed by the α-AlONPs and γ-AlOHNPs. In mice, γ-AlOHNPs accumulated the most 24 h after a single oral dose. Additionally, the decreased number of white blood cells (WBC), the increased ratio of neutrophils and the enhanced secretion of interleukin (IL)-8 were observed in the blood of mice dosed with γ-AlOHNPs (10 mg kg(-1)). We also compared their toxicity using four different in vitro test methods using six cell lines, which were derived from their potential target organs, BEAS-2B (lung), Chang (liver), HACAT (skin), H9C2 (heart), T98G (brain) and HEK-293 (kidney). The results showed γ-AlOHNPs induced the greatest toxicity. Moreover, separation of particles was observed in a transmission electron microscope (TEM) image of cells treated with γ-AlOHNPs, but not γ-AlONPs or α-AlONPs. In conclusion, our results suggest that the accumulation and toxicity of AlONPs are stronger in γ-AlOHNPs compared with γ-AlONPs and α-AlONPs owing their low stability within biological system, and the presence of hydroxyl group may be an important factor in determining the distribution and toxicity of spherical AlONPs. PMID:26437923

  13. Single-Phase Rare-Earth Oxide/Aluminum Oxide Glasses

    NASA Technical Reports Server (NTRS)

    Weber, J. K. Richard; Abadie, John G.; Hixson, April D.; Nordine, Paul C.

    2006-01-01

    Glasses that comprise rare-earth oxides and aluminum oxide plus, optionally, lesser amounts of other oxides, have been invented. The other oxide(s) can include SiO2, B2O3, GeO2, and/or any of a variety of glass-forming oxides that have been used heretofore in making a variety of common and specialty glasses. The glasses of the invention can be manufactured in bulk single-phase forms to ensure near uniformity in optical and mechanical characteristics, as needed for such devices as optical amplifiers, lasers, and optical waveguides (including optical fibers). These glasses can also be formulated to have high indices of refraction, as needed in some of such devices.

  14. CVD diamond film oxidation resistance research

    NASA Astrophysics Data System (ADS)

    Jing, Longwei; Wang, Xiaoping; Wang, Lijun; Pan, Xiufang; Sun, Yiqing; Wang, Jinye; Sun, Hongtao

    2013-12-01

    Diamond films were deposited on a silicon substrate by microwave plasma chemical vapor deposition system, and its oxidation experiments were carried out in atmospheric environmental condition by using a muffle furnace. Inatmospheric environment (the temperature is from 400°C to 900°C) the oxidation resistance of diamond thin films was investigated. The results indicate that under the atmospheric environment diamond thin film surface morphology did not change after 6 hours at 400°C. Diamond thin film surface morphology began to change after 2 hours at 600°C, and when time was extended to 4 hours, the diamond thin film surface morphology changed significantly. The surface morphology of diamond films began to change after 15 minutes at a 700°C condition and when time was extended to 6 hours diamond films were all destroyed. All the diamond films on the silicon substrate disappeared completely in 20 minutes at 900°C. The intact crystal face is the reason that natural diamond has stable chemical property. The crystal face of synthetic diamond film has a lot of defects, especially on the side. Oxidation of the diamond films begin with the grain boundary and defects.

  15. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates

    NASA Astrophysics Data System (ADS)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-04-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  16. Ultralyophobic oxidized aluminum surfaces exhibiting negligible contact angle hysteresis.

    PubMed

    Hozumi, Atsushi; McCarthy, Thomas J

    2010-02-16

    Ultralyophobic oxidized aluminum surfaces exhibiting negligible contact angle hysteresis for probe liquids were prepared by chemical vapor deposition (CVD) of bis((tridecafluoro-1,1,2,2,-tetrahydrooctyl)-dimethylsiloxy)methylsilane (CF(3)(CF(2))(5)CH(2)CH(2)Si(CH(3))(2)O)(2)SiCH(3)H, (R(F)Si(Me)(2)O)(2)SiMeH). Oxidized aluminum surfaces were prepared by photooxidation/cleaning of sputter-coated aluminum on silicon wafers (Si/Al(Al(2)(O(3)))) using oxygen plasma. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) confirmed that this facile CVD method produces a monolayer with a thickness of 1.1 nm on the Si/Al(Al(2)(O(3))) surface without a discernible change in surface morphology. After monolayer deposition, the hydrophilic Si/Al(Al(2)(O(3))) surface became both hydrophobic and oleophobic and exhibited essentially no contact angle hysteresis for water and n-hexadecane (advancing/receding contact angles (theta(A)/theta(R)) = 110 degrees/109 degrees and 52 degrees/50 degrees, respectively). Droplets move very easily on this surface and roll off of slightly tilted surfaces, independently of the contact angle (which is a practical definition of ultralyophobic). A conventional fluoroalkylsilane monolayer was also prepared from 1H,1H,2H,2H-perfluorodecyltrimethoxysilane (CF(3)(CF(2))(7)CH(2)CH(2)Si(OCH(3))(3), R(F)Si(OMe)(3)) for comparison. The theta(A)/theta(R) values for water and n-hexadecane are 121 degrees/106 degrees and 76 degrees/71 degrees, respectively. The larger hysteresis values indicate the "pinning" of probe liquids, even though advancing contact angles are larger than those of the (R(F)Si(Me)(2)O)(2)SiMeH-derived monolayers. The (R(F)Si(Me)(2)O)(2)SiMeH-derived monolayers have excellent hydrolytic stability in water. We propose that the (R(F)Si(Me)(2)O)(2)SiMeH-derived monolayers are flexible and liquidlike and that drops in contact with these surfaces experience very low energy barriers between metastable states, leading to the

  17. Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

    PubMed Central

    Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

    2013-01-01

    This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

  18. Quantum molecular dynamics simulations of the oxidation of aluminum-cyclopentadienyl clusters

    NASA Astrophysics Data System (ADS)

    Alnemrat, Sufian; Hooper, Joseph P.

    2014-05-01

    We report Car-Parrinello molecular dynamics simulations of the oxidation of aluminum-cyclopentadienyl clusters currently being considered as novel fuels or energetic materials. These clusters contain a small aluminum core surrounded by a single organic ligand layer. The aromatic cyclopentadienyl ligands form a very strong bond with surface Al atoms, giving rise to a stable organometallic cluster which crystallizes into a low-symmetry solid-state material. Our calculations of an isolated cluster in oxygen show minimal reaction between the ligand and oxygen molecules at simulation temperatures of 300 and 1000 K. Rather, in all cases O2 diffuses through the ligand barrier, splits into atomic oxygen upon contact with the aluminum, and forms an amorphous aluminum oxide core. Loss of aluminum-ligand units, as expected from bond strength calculations, is not observed except following significant oxidation. We present simple metrics to quantitatively compare the steric barrier of the outer ligands that limits the oxidation process.

  19. High quality oxide films on substrates

    DOEpatents

    Ruckman, Mark W.; Strongin, Myron; Gao, Yong L.

    1994-01-01

    A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

  20. High quality oxide films on substrates

    DOEpatents

    Ruckman, M.W.; Strongin, M.; Gao, Y.L.

    1994-02-01

    A method is described for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material. 4 figures.

  1. Aluminum powder metallurgy processing

    SciTech Connect

    Flumerfelt, J.F.

    1999-02-12

    The objective of this dissertation is to explore the hypothesis that there is a strong linkage between gas atomization processing conditions, as-atomized aluminum powder characteristics, and the consolidation methodology required to make components from aluminum powder. The hypothesis was tested with pure aluminum powders produced by commercial air atomization, commercial inert gas atomization, and gas atomization reaction synthesis (GARS). A comparison of the GARS aluminum powders with the commercial aluminum powders showed the former to exhibit superior powder characteristics. The powders were compared in terms of size and shape, bulk chemistry, surface oxide chemistry and structure, and oxide film thickness. Minimum explosive concentration measurements assessed the dependence of explosibility hazard on surface area, oxide film thickness, and gas atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization oxidation of aluminum powder. An Al-Ti-Y GARS alloy exposed in ambient air at different temperatures revealed the effect of reactive alloy elements on post-atomization powder oxidation. The pure aluminum powders were consolidated by two different routes, a conventional consolidation process for fabricating aerospace components with aluminum powder and a proposed alternative. The consolidation procedures were compared by evaluating the consolidated microstructures and the corresponding mechanical properties. A low temperature solid state sintering experiment demonstrated that tap densified GARS aluminum powders can form sintering necks between contacting powder particles, unlike the total resistance to sintering of commercial air atomization aluminum powder.

  2. Pretreatment effects on the morphology and properties of aluminum oxide thermally grown on NiCoCrAlY

    NASA Technical Reports Server (NTRS)

    Prakash, S.; Budhani, R.; Doerr, H. J.; Deshpandey, C. V.; Bunshah, R. F.

    1985-01-01

    The effect of pretreatments on the morphology and properties of aluminum oxide thermally grown from NiCoCrAlY was investigated. The goal was to optimize process steps to produce a highly adherent, continuous, and insulating aluminum oxide. Two pretreatments were carried out, one in vacuum (about 0.0001 Torr) at 1350 K for 5 h, and the other consisting of deposition of a 1-micron thick Al2O3 film by activated reactive evaporation. Samples were subsequently oxidized thermally at 1000 C for 50 h at 0.5 Torr oxygen pressure. The two pretreatments were carried out on electron-beam evaporation NiCoCrAlY, about 120 microns thick, deposited on a superalloy turbine blade substrate. The results showed that the thermally grown oxide was significantly different in microstructure, surface topography and in its adherence to the NiCoCrAlY for the two pretreatments. Optimum results were obtained by combining the two pretreatments to produce an adherent, continuous, and insulating oxide film on the NiCoCrAlY-coated superalloy substrate.

  3. In-flight oxidation of aluminum in the twin-wire electric arc process

    NASA Astrophysics Data System (ADS)

    Guillen, Donna Post; Williams, Brian G.

    2006-03-01

    This paper examines the in-flight oxidation of aluminum sprayed in air using the twin-wire electric arc (TWEA) thermal spray process. Aerodynamic shear at the droplet surface increases the amount of in-flight oxidation by promoting entrainment of the surface oxides within the molten droplet and continually exposing fresh fluid available for oxidation. Mathematical predictions herein confirm experimental measurements that reveal an elevated, nearly constant surface temperature (˜2273 K) of the droplets during flight. The calculated oxide volume fraction of a “typical” droplet with internal circulation compares favorably to the experimentally determined oxide content (3.3 12.7%) for a typical TWEA-sprayed aluminum coating sprayed onto a room temperature substrate. It is concluded that internal circulation within the molten aluminum droplet is a significant source of oxidation. This effect produces an oxide content nearly two orders of magnitude larger than that of a droplet without continual oxidation.

  4. Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

    SciTech Connect

    Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun

    2013-07-01

    Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al{sub 2}O{sub 3}) on a graphene channel through nitrogen plasma treatment. The deposited Al{sub 2}O{sub 3} thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al{sub 2}O{sub 3} as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics.

  5. Use of aluminum films as substrates for enhanced fluorescence in the ultraviolet-blue spectral region

    NASA Astrophysics Data System (ADS)

    Chowdhury, Mustafa H.; Ray, Krishanu; Lakowicz, Joseph R.

    2008-02-01

    Thermal evaporation was used to deposit particulate aluminum films of varied thicknesses on quartz substrates. These substrates were characterized by scanning electron microscopy (SEM), which reveal that with an increase in aluminum thickness, the films progress from particulate towards smooth surfaces. Until now, metal-enhanced fluorescence (MEF) has primarily been observed in the visible-NIR wavelength region using silver or gold island films and roughened surfaces. We now report that fluorescence can also be enhanced in the ultraviolet-blue region of the spectrum using nano-structured aluminum films. We used two probes, one in the ultraviolet (a DNA base analogue 2-aminopurine: 2- AP) and another one in blue spectral region (a coumarin derivative: 7-HC) for the present study. We observed increased emission, decrease in fluorescence lifetime and increase in photostability of the dyes in a 10 nm spin-casted polyvinyl alcohol film on the Al nanostructured surfaces. We observe that the fluorescence enhancement factor depends on the thickness of the Al films because the size of the nanostructures formed varies with Al thickness. These studies indicate that Al nano-structured substrates can potentially find widespread use in MEF applications particularly in the UV - blue spectral regime. Finite-Difference Time-Domain (FDTD) calculations were performed that revealed enhanced near-fields induced around aluminum nanoparticles by a radiating fluorophore emitting at the emission wavelength of 2-AP. The effect of such enhanced fields on the fluorescence enhancement observed is also discussed.

  6. Use of aluminum films as substrates for enhanced fluorescence in the ultraviolet-blue spectral region.

    PubMed

    Chowdhury, Mustafa H; Ray, Krishanu; Lakowicz, Joseph R

    2008-02-01

    Thermal evaporation was used to deposit particulate aluminum films of varied thicknesses on quartz substrates. These substrates were characterized by scanning electron microscopy (SEM), which reveal that with an increase in aluminum thickness, the films progress from particulate towards smooth surfaces. Until now, metal-enhanced fluorescence (MEF) has primarily been observed in the visible-NIR wavelength region using silver or gold island films and roughened surfaces. We now report that fluorescence can also be enhanced in the ultraviolet-blue region of the spectrum using nano-structured aluminum films. We used two probes, one in the ultraviolet (a DNA base analogue 2-aminopurine: 2-AP) and another one in blue spectral region (a coumarin derivative: 7-HC) for the present study. We observed increased emission, decrease in fluorescence lifetime and increase in photostability of the dyes in a 10 nm spin-casted polyvinyl alcohol film on the Al nanostructured surfaces. We observe that the fluorescence enhancement factor depends on the thickness of the Al films because the size of the nanostructures formed varies with Al thickness. These studies indicate that Al nano-structured substrates can potentially find widespread use in MEF applications particularly in the UV - blue spectral regime. Finite-Difference Time-Domain (FDTD) calculations were performed that revealed enhanced near-fields induced around aluminum nanoparticles by a radiating fluorophore emitting at the emission wavelength of 2-AP. The effect of such enhanced fields on the fluorescence enhancement observed is also discussed. PMID:19617923

  7. [Sensitometry of Mammographic Screen-film System Using Bootstrap Aluminum Step-Wedge.].

    PubMed

    Abe, Shinji; Imada, Ryou; Terauchi, Takashi; Fujisaki, Tatsuya; Monma, Masahiko; Nishimura, Katsuyuki; Saitoh, Hidetoshi; Mochizuki, Yasuo

    2005-01-01

    Recently, a few types of step-wedges for bootstrap sensitometry with a mammographic screen-film system have been proposed. In this study, the bootstrap sensitometry with the mammographic screen-film system was studied for two types of aluminum step-wedges. Characteristic X-ray energy curves were determined using mammographic and general radiographic aluminum step-wedges devised to prevent scattered X-rays generated from one step penetrating into the region of another one, and dependence of the characteristic curves on the wedges was also discussed. No difference was found in the characteristic curves due to the difference in the step-wedges for mammography and general radiography although there was a slight difference in shape at the shoulder portion for the two types of step-wedges. Therefore, it was concluded that aluminum step-wedges for mammography and general radiography could be employed in bootstrap sensitometry with the mammographic screen-film system. PMID:16479054

  8. Deposition and field emission properties of highly crystallized silicon films on aluminum-coated polyethylene napthalate

    NASA Astrophysics Data System (ADS)

    Li, Junshuai; Wang, Jinxiao; Yin, Min; Gao, Pingqi; He, Deyan; Chen, Qiang; Shirai, Hajime

    2007-08-01

    Highly crystallized silicon films were deposited on aluminum-coated polyethylene napthalate (PEN) substrates by inductively coupled plasma (ICP-) chemical vapor deposition (CVD) at room temperature. The films with uniform grains about 50 nm have the (1 1 1) preferred orientation. By studying the relation of the silicon film crystallinity to the flow ratio of SiH 4 to H 2, it was found that the interaction between precursors and aluminum layers plays an important role in the crystallization process. The surface roughness of the resultant films was analyzed by atomic force microscopy (AFM). The results reveal that the roughness of the silicon films on aluminum-coated PEN substrates, compared to the films on bare PEN substrates, is dependent on the film phase rather than the substrate morphology. The measurement of field electron emission of the crystalline silicon film indicates that the threshold field is about 8.3 V/μm and the emission is reproducible in the emission region.

  9. Cytotoxicity of cultured macrophages exposed to antimicrobial zinc oxide (ZnO) coatings on nanoporous aluminum oxide membranes

    PubMed Central

    Petrochenko, Peter E.; Skoog, Shelby A.; Zhang, Qin; Comstock, David J.; Elam, Jeffrey W.; Goering, Peter L.; Narayan, Roger J.

    2013-01-01

    Zinc oxide (ZnO) is a widely used commercial material that is finding use in wound healing applications due to its antimicrobial properties. Our study demonstrates a novel approach for coating ZnO with precise thickness control onto 20 nm and 100 nm pore diameter anodized aluminum oxide using atomic layer deposition (ALD). ZnO was deposited throughout the nanoporous structure of the anodized aluminum oxide membranes. An 8 nm-thick coating of ZnO, previously noted to have antimicrobial properties, was cytotoxic to cultured macrophages. After 48 h, ZnO-coated 20 nm and 100 nm pore anodized aluminum oxide significantly decreased cell viability by ≈65% and 54%, respectively, compared with cells grown on uncoated anodized aluminum oxide membranes and cells grown on tissue culture plates. Pore diameter (20–200 nm) did not influence cell viability. PMID:23881040

  10. Photochemistry of adsorbed nitrate on aluminum oxide particle surfaces.

    PubMed

    Rubasinghege, Gayan; Grassian, Vicki H

    2009-07-01

    Nitrogen oxides, including nitrogen dioxide and nitric acid, react with mineral dust particles in the atmosphere to yield adsorbed nitrate. Although nitrate ion is a well-known chromophore in natural waters, little is known about the surface photochemistry of nitrate adsorbed on mineral particles. In this study, nitrate adsorbed on aluminum oxide, a model system for mineral dust aerosol, is irradiated with broadband light (lambda > 300 nm) as a function of relative humidity (RH) in the presence of molecular oxygen. Upon irradiation, the nitrate ion readily undergoes photolysis to yield nitrogen-containing gas-phase products including NO(2), NO, and N(2)O, with NO being the major product. The relative ratio and product yields of these gas-phase products change with RH, with N(2)O production being highest at the higher relative humidities. Furthermore, an efficient dark reaction readily converts the major NO product into NO(2) during post-irradiation. Photochemical processes on mineral dust aerosol surfaces have the potential to impact the chemical balance of the atmosphere, yet little is known about these processes. In this study, the impact that adsorbed nitrate photochemistry may have on the renoxification of the atmosphere is discussed. PMID:19534452

  11. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  12. Zinc oxide thin film acoustic sensor

    NASA Astrophysics Data System (ADS)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Mansour, Hazim Louis; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah

    2013-12-01

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  13. Oxidation behavior of titanium nitride films

    NASA Astrophysics Data System (ADS)

    Chen, Hong-Ying; Lu, Fu-Hsing

    2005-07-01

    The oxidation behavior of titanium nitride (TiN) films has been investigated by using x-ray diffraction, Raman scattering spectroscopy, and field emission scanning electron microscopy. TiN films were deposited onto Si substrates by using cathodic arc plasma deposition technique. After that, the films were annealed in the air at 500-800 °C for 2 h. The x-ray diffraction spectra showed that rutile-TiO2 appeared above 600 °C. The relative intensity of TiO2 rapidly increased with temperatures. Only rutile-TiO2 was detected above 700 °C. Raman scattering spectra indicated the presence of rutile-TiO2 signals above 500 °C. Meanwhile an additional Si peak appeared at 700 °C in Raman spectra, above which only Si peak appeared. Many nano pores were found on the surface of films annealed at temperatures between 600 and 700 °C in field emission scanning electron microscopy, while the granular structure existed at 800 °C. The as-deposited TiN films had an apparent columnar structure. The thin and dense oxide overlayer appeared at 500 °C, and thicker oxide layer existed above 600 °C. The elongated grain structure with many voids existed in the film at 800 °C. These pores-voids might result from the nitrogen release during the oxidation of the nitride. The oxide layer obviously grows inward indicating the oxidation of TiN films belongs to an inward oxidation. The pre-exponential factor and the activation energy of the oxidation were evaluated by Arrhenius-type relation. These values were 2.2×10-6 cm2/s and 110+/-10 kJ/mol, which are consistent with those reports in the literature.

  14. Aluminum ions accelerated the oxidative stress of copper-mediated melanin formation

    NASA Astrophysics Data System (ADS)

    Di, Junwei; Bi, Shuping

    2003-11-01

    A comparison between the effects of aluminum and cupric ions on the dopachrome (DC) conversion and the cooperation effect of the both ions in the DOPA oxidation to melanin pathway has been studied by UV-Vis spectrophotometric method. Both aluminum and cupric ions catalyze the DC conversion reaction, which is an important step in the melanin synthesis pathway. However, cupric ions catalyze the conversion of DC to yield 5,6-dihydroxyindole-2-carboxylic acid (DHICA) but the product of DC conversion catalyzed by aluminum is 5,6-dihydroxyindole (DHI). DOPA oxidation catalyzed by aluminum and cupric ions is studied in the presence of hydrogen peroxide. The results from our experiments provide evidence that aluminum can markedly increase the oxidative stress of copper-mediated the melanin formation and influence the properties of the melanin by means of changing the ratio of DHICA/DHI in the acidic environment (pH 5.5).

  15. Oxide Film and Porosity Defects in Magnesium Alloy AZ91

    SciTech Connect

    Wang, Liang; Rhee, Hongjoo; Felicelli, Sergio D.; Sabau, Adrian S; Berry, John T.

    2009-01-01

    Porosity is a major concern in the production of light metal parts. This work aims to identify some of the mechanisms of microporosity formation in magnesium alloy AZ91. Microstructure analysis was performed on several samples obtained from gravity-poured ingots in graphite plate molds. Temperature data during cooling was acquired with type K thermocouples at 60 Hz at three locations of each casting. The microstructure of samples extracted from the regions of measured temperature was then characterized with optical metallography. Tensile tests and conventional four point bend tests were also conducted on specimens cut from the cast plates. Scanning electron microscopy was then used to observe the microstructure on the fracture surface of the specimens. The results of this study revealed the existence of abundant oxide film defects, similar to those observed in aluminum alloys. Remnants of oxide films were detected on some pore surfaces, and folded oxides were observed in fracture surfaces indicating the presence of double oxides entrained during pouring.

  16. Microstructural evolution of tungsten oxide thin films

    NASA Astrophysics Data System (ADS)

    Hembram, K. P. S. S.; Thomas, Rajesh; Rao, G. Mohan

    2009-10-01

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 °C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a "instability wheel" model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  17. Determination of the surface isoelectric point of oxide films on metals by contact angle titration

    SciTech Connect

    McCafferty, E.; Wightman, J.P.

    1997-10-15

    The surface isoelectric point for the native air-formed oxide films on aluminum, chromium, and tantalum has been determined by measurement of contact angles at the hexadecane/aqueous solution interface as a function of pH of the aqueous phase. Application of Young`s equation, the Gibbs equation, and surface equilibria conditions for hydroxylated oxide films leads to a mathematical expression which shows that the contact angle goes through a maximum at the isoelectric point of the oxide. The experimentally determined isoelectric point of oxide-covered chromium is 5.2 to 5.3, of oxide-covered aluminum is 9.5, and of oxide-covered tantalum is approximately {minus}0.7. These values for the oxide films are within one to three pH units of the reported isoelectric points for the corresponding bulk oxide powders. The oxide-covered metal surfaces were cleaned by argon plasma treatment prior to measurement of contact angles, in that XPS measurements showed this treatment to be effective in reducing the thickness of the carbon contamination layer. In addition, interfacial tensions were measured at the hexadecane/aqueous solution interface and were observed to have only a slight dependence on the pH of the aqueous phase.

  18. Measurement of quasiparticle transport in aluminum films using tungsten transition-edge sensors

    SciTech Connect

    Yen, J. J. Shank, B.; Cabrera, B.; Moffatt, R.; Redl, P.; Young, B. A.; Tortorici, E. C.; Brink, P. L.; Cherry, M.; Tomada, A.; Kreikebaum, J. M.

    2014-10-20

    We report on experimental studies of phonon sensors which utilize quasiparticle diffusion in thin aluminum films connected to tungsten transition-edge-sensors (TESs) operated at 35 mK. We show that basic TES physics and a simple physical model of the overlap region between the W and Al films in our devices enables us to accurately reproduce the experimentally observed pulse shapes from x-rays absorbed in the Al films. We further estimate quasiparticle loss in Al films using a simple diffusion equation approach. These studies allow the design of phonon sensors with improved performance.

  19. Corrosion-electrochemical properties of the anodic oxide films formed on aluminum in a chloride-nitrate melt in a 0.5 M Aqueous NaCl solution

    NASA Astrophysics Data System (ADS)

    Elshina, L. A.; Malkov, V. B.; Kudyakov, V. Ya.; Gnedenkov, S. V.; Sinebryukhov, S. L.; Egorkin, V. S.; Mashtalyar, D. V.

    2014-02-01

    The corrosion-electrochemical behavior of aluminum is studied in a chloride-nitrate melt containing 50 wt % eutectic mixture of cesium and sodium chlorides and 50 wt % sodium nitrate in the temperature range 790-900 K in an argon atmosphere.

  20. Oxidation of ligand-protected aluminum clusters: an ab initio molecular dynamics study.

    PubMed

    Alnemrat, Sufian; Hooper, Joseph P

    2014-03-14

    We report Car-Parrinello molecular dynamics simulations of the oxidation of ligand-protected aluminum clusters that form a prototypical cluster-assembled material. These clusters contain a small aluminum core surrounded by a monolayer of organic ligand. The aromatic cyclopentadienyl ligands form a strong bond with surface Al atoms, giving rise to an organometallic cluster that crystallizes into a low-symmetry solid and is briefly stable in air before oxidizing. Our calculations of isolated aluminum/cyclopentadienyl clusters reacting with oxygen show minimal reaction between the ligand and O2 molecules at simulation temperatures of 500 and 1000 K. In all cases, the reaction pathway involves O2 diffusing through the ligand barrier, splitting into atomic oxygen upon contact with the aluminum, and forming an oxide cluster with aluminum/ligand bonds still largely intact. Loss of individual aluminum-ligand units, as expected from unimolecular decomposition calculations, is not observed except following significant oxidation. These calculations highlight the role of the ligand in providing a steric barrier against oxidizers and in maintaining the large aluminum surface area of the solid-state cluster material. PMID:24628175

  1. Oxidation of ligand-protected aluminum clusters: An ab initio molecular dynamics study

    SciTech Connect

    Alnemrat, Sufian; Hooper, Joseph P.

    2014-03-14

    We report Car-Parrinello molecular dynamics simulations of the oxidation of ligand-protected aluminum clusters that form a prototypical cluster-assembled material. These clusters contain a small aluminum core surrounded by a monolayer of organic ligand. The aromatic cyclopentadienyl ligands form a strong bond with surface Al atoms, giving rise to an organometallic cluster that crystallizes into a low-symmetry solid and is briefly stable in air before oxidizing. Our calculations of isolated aluminum/cyclopentadienyl clusters reacting with oxygen show minimal reaction between the ligand and O{sub 2} molecules at simulation temperatures of 500 and 1000 K. In all cases, the reaction pathway involves O{sub 2} diffusing through the ligand barrier, splitting into atomic oxygen upon contact with the aluminum, and forming an oxide cluster with aluminum/ligand bonds still largely intact. Loss of individual aluminum-ligand units, as expected from unimolecular decomposition calculations, is not observed except following significant oxidation. These calculations highlight the role of the ligand in providing a steric barrier against oxidizers and in maintaining the large aluminum surface area of the solid-state cluster material.

  2. Oxidation of ligand-protected aluminum clusters: An ab initio molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Alnemrat, Sufian; Hooper, Joseph P.

    2014-03-01

    We report Car-Parrinello molecular dynamics simulations of the oxidation of ligand-protected aluminum clusters that form a prototypical cluster-assembled material. These clusters contain a small aluminum core surrounded by a monolayer of organic ligand. The aromatic cyclopentadienyl ligands form a strong bond with surface Al atoms, giving rise to an organometallic cluster that crystallizes into a low-symmetry solid and is briefly stable in air before oxidizing. Our calculations of isolated aluminum/cyclopentadienyl clusters reacting with oxygen show minimal reaction between the ligand and O2 molecules at simulation temperatures of 500 and 1000 K. In all cases, the reaction pathway involves O2 diffusing through the ligand barrier, splitting into atomic oxygen upon contact with the aluminum, and forming an oxide cluster with aluminum/ligand bonds still largely intact. Loss of individual aluminum-ligand units, as expected from unimolecular decomposition calculations, is not observed except following significant oxidation. These calculations highlight the role of the ligand in providing a steric barrier against oxidizers and in maintaining the large aluminum surface area of the solid-state cluster material.

  3. Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tarala, V. A.; Altakhov, A. S.; Martens, V. Ya; Lisitsyn, S. V.

    2015-11-01

    Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250 °C and 280 °C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth.

  4. Sapphire surface polariton splitting due to resonance with aluminum nitride film phonon

    NASA Astrophysics Data System (ADS)

    Yakovlev, V. A.; Novikova, N. N.; Vinogradov, E. A.; Ng, S. S.; Hassan, Z.; Hassan, H. A.

    2010-02-01

    Two thin aluminum nitride films have been prepared on sapphire substrates by molecular beam epitaxy technique. Then alkaline and acidic washing were used to remove the back-metal-coating of the sapphire substrate for one of the samples. (It caused also partial film dissolution). The surface polariton (SP) spectra have been measured by attenuated total reflection (ATR) technique. The measured SP dispersion is compared with one calculated using the literature film parameters. Due to the resonance interaction of sapphire substrate SP with the film transverse optical (TO) phonon the splitting of the dispersion curve of sapphire SP was found. The resonance takes place only for the frequency of the film TO phonon polarized along the surface of the anisotropic AlN film (perpendicular to the optical axis). The analysis of ATR and external reflectivity spectra shows the presence of some transition layer between the substrate and the film.

  5. In-process oxidation protection in fluxless brazing or diffusion bonding of aluminum alloys

    NASA Technical Reports Server (NTRS)

    Okelly, K. P.; Featherston, A. B.

    1974-01-01

    Aluminum is cleaned of its oxide coating and is sealed immediately with polymeric material which makes it suitable for fluxless brazing or diffusion bonding. Time involved between cleaning and brazing is no longer critical factor.

  6. Molecular Scale Assessment of Methylarsenic Sorption on Aluminum Oxide

    SciTech Connect

    Shimizu, M.; Ginder-Vogel, M; Parikh, S; Sparks, D

    2010-01-01

    Methylated forms of arsenic (As), monomethylarsenate (MMA) and dimethylarsenate (DMA), have historically been used as herbicides and pesticides. Because of their large application to agriculture fields and the toxicity of MMA and DMA, the sorption of methylated As to soil constituents requires investigation. MMA and DMA sorption on amorphous aluminum oxide (AAO) was investigated using both macroscopic batch sorption kinetics and molecular scale extended X-ray absorption fine structure (EXAFS) and Fourier transform infrared (FTIR) spectroscopic techniques. Sorption isotherm studies revealed sorption maxima of 0.183, 0.145, and 0.056 mmol As/mmol Al for arsenate (As{sup V}), MMA, and DMA, respectively. In the sorption kinetics studies, 100% of added As{sup V} was sorbed within 5 min, while 78% and 15% of added MMA and DMA were sorbed, respectively. Desorption experiments, using phosphate as a desorbing agent, resulted in 30% release of absorbed As{sup V}, while 48% and 62% of absorbed MMA and DMA, respectively, were released. FTIR and EXAFS studies revealed that MMA and DMA formed mainly bidentate binuclear complexes with AAO. On the basis of these results, it is proposed that increasing methyl group substitution results in decreased As sorption and increased As desorption on AAO.

  7. Microfluidic DNA extraction using a patterned aluminum oxide membrane

    NASA Astrophysics Data System (ADS)

    Kim, Jungkyu; Gale, Bruce K.

    2006-01-01

    A DNA extraction system was designed and fabricated using an AOM (aluminum oxide membrane) with 200 nm pores and PDMS microfluidic channels. The membrane was patterned using soft lithography techniques and SU-8 photolithography on the membrane. After making the pattern with SU-8, the AOM was observed using an SEM (scanning electro microscope) to verify the AOM structure was not damaged. From the SEM images, the AOM structure was not different after modification with SU-8. To complete the system, a PDMS mold for the microfluidic channels was made by soft lithography. Using the SU-8 mold, PDMS microchannels were cast using PDMS with a low polymer to curing agent ratio to provide adhesion between the patterned membrane and microfluidic channel. Then, the patterned membrane was sandwiched between PDMS microfluidic channels in a parallel format. The completed system was tested with 10ug of Lambda DNA mixed with the fluorescent dye SYBR Green I. Following DNA extraction, the surface of each well was examined with fluorescence microscopy while embedded in the microfluidic system. Extracted and immobilized DNA on the AOM was observed in almost every separation well. This microsystem, referred to as a membrane-on-a-chip, has potential applications in high-throughput DNA extraction and analysis, with the possibility of being integrated into polymer-based microfluidic systems.

  8. Aluminum nanostructured films as substrates for enhanced fluorescence in the ultraviolet-blue spectral region.

    PubMed

    Ray, Krishanu; Chowdhury, Mustafa H; Lakowicz, Joseph R

    2007-09-01

    Particulate aluminum films of varied thicknesses were deposited on quartz substrates by thermal evaporation. These nanostructured substrates were characterized by scanning electron microscopy (SEM). With the increase of aluminum thickness, the films progress from articulate toward smooth surfaces as observed by SEM images. To date, metal-enhanced fluorescence (MEF) has primarily been observed in the visible - NIR wavelength region using silver or gold island films or roughened surfaces. We now show that fluorescence could also be enhanced in the ultraviolet-blue region of the spectrum using nanostructured aluminum films. Two probes, one in the ultraviolet and another one in the blue spectral region, have been chosen for the present study. We observed increased emission, decrease in fluorescence lifetime, and increase in photostability of a DNA base analogue 2-aminopurine and a coumarin derivative (7-HC) in 10-nm spin-casted poly(vinyl alcohol) film on Al nanostructured surfaces. The fluorescence enhancement factor depends on the thickness of the Al films as the size of the nanostructures formed varies with Al thickness. Both probes showed increased photostability near aluminum nanostructured substrates, which is consistent with the shorter lifetime. Our preliminary studies indicate that Al nanostructured substrates can potentially find widespread use in MEF applications particularly in the UV-blue spectral regime. Furthermore, these Al nanostructured substrates are very stable in buffers that contain chloride salts compared to usual silver colloid-based substrates for MEF, thus furthering the usefulness of these Al-based substrates in many biological assays where high concentration of salts are required. Finite-Difference Time-Domain calculations were also employed to study the enhanced near-fields induced around aluminum nanoparticles by a radiating fluorophore, and the effect of such enhanced fields on the fluorescence enhancement observed was discussed. PMID

  9. Electro-deposition of superconductor oxide films

    DOEpatents

    Bhattacharya, Raghu N.

    2001-01-01

    Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

  10. Hybrid aluminum and indium conducting filaments for nonpolar resistive switching of Al/AlOx/indium tin oxide flexible device

    NASA Astrophysics Data System (ADS)

    Yuan, Fang; Wang, Jer-Chyi; Zhang, Zhigang; Ye, Yu-Ren; Pan, Liyang; Xu, Jun; Lai, Chao-Sung

    2014-02-01

    The nonpolar resistive switching characteristics of an Al/AlOx/indium tin oxide (ITO) device on a plastic flexible substrate are investigated. By analyzing the electron diffraction spectroscopy results and thermal coefficient of resistivity, it is discovered that the formation of aluminum and indium conducting filaments in AlOx film strongly depends on the polarity of the applied voltage. The metal ions arising from the Al and ITO electrodes respectively govern the resistive switching in corresponding operation polarity. After 104 times of mechanical bending, the device can perform satisfactorily in terms of resistance distribution, read sequence of high and low resistive states, and thermal retention properties.

  11. Microtribological Mechanisms of Tungsten and Aluminum Nitride Films

    NASA Astrophysics Data System (ADS)

    Zhao, Hongjian; Mu, Chunyan; Ye, Fuxing

    2016-04-01

    Microtribology experiments were carried out on the W1- x Al x N films, deposited by radio frequency magnetron reactive sputtering on 304 stainless steel substrates and Si(100). Film wear mechanisms were investigated from the evolution of the friction coefficient and scanning electron microscopy observations. The results show that the WAlN films consist of a mixture of face-centered cubic W(Al)N and hexagonal wurtzite structure AlN phases and the preferred orientation changes from (111) to (200). The film damage after sliding test is mainly attributed to the composition and microstructure of the films. The amount of debris generated by friction is linked to the crack resistance. The better tribological properties for W1- x Al x N films ( x < 0.4) are mainly determined by the higher toughness.

  12. The development of a preliminary correlation of data on oxide growth on 6061 aluminum under ANS thermal-hydraulic conditions

    SciTech Connect

    Pawel, R.E.; Yoder, G.L.; West, C.D.; Montgomery, B.H.

    1990-06-01

    The corrosion of aluminum alloy 6061 is being studied in a special test loop facility under the range of thermal-hydraulic conditions appropriate for fuel plate operation in the Advanced Neutron Source (ANS) reactor core. Experimental measurements describing the growth of the boehmite (Al{sub 2}O{sub 3}H{sub 2}O) films on the exposed aluminum surfaces are now available for a range of coolant conditions and heat fluxes, and these results have been analyzed to demonstrate the influence of several important experimental variables. A subset of our data base particularly appropriate to the ANS conditions presently anticipated was used to develop a preliminary correlation based on an empirical oxidation model.

  13. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

    PubMed Central

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m-2 and 0.9±0.1 C m-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported. PMID:26193701

  14. [Effect of aluminum on the non-enzymatic oxidation of dopamine].

    PubMed

    Marinho, C R; Manso, C F

    1994-11-01

    The effect of different concentrations of aluminum sulphate on the nonenzymatic oxidation of dopamine was studied in order to evaluate the action of this metal on neuromelanin synthesis. Data shows that under the studied conditions, aluminum partially inhibits dopamine self-oxidation, decreasing the formation of some intermediate compounds, namely dopaminequinone and dopaminochrome. If neuromelanins have a cytoprotective function in the central nervous system, possibly acting as intracellular scavengers of free radicals and redox metal ions, their decrease due to aluminum could be responsible for serious damage to neuronal tissues. PMID:7717100

  15. On the growth of conductive aluminum doped zinc oxide on 001 strontium titanate single crystals

    NASA Astrophysics Data System (ADS)

    Trinca, L. M.; Galca, A. C.; Aldica, G.; Radu, R.; Mercioniu, I.; Pintilie, L.

    2016-02-01

    Aluminum doped zinc oxide (AZO) thin films were obtained by pulsed laser deposition on (001) SrTiO3 (STO) on a range of substrate temperatures during ablation between 300 °C and 600 °C. A hexagonal system lying on a cubic one should be difficult to be obtained in epitaxial form. The geometrical selection of the AZO growth on (001) STO is not giving a unique preferential orientation. Two orientations, c-axis (along [001]) and 110, have been observed experimentally with different ratios at different substrate temperature. Discussions are made with respect to the temperature dependence of lattice mismatch between the two cases and the cubic surface of the substrate, and to the substrate surface morphology and terminating atomic layer composition. The 110 AZO is the main phase at deposition temperature of 550 °C, while for other substrate temperatures the 001 is the preferential orientation. The conductive character of 110 AZO thin film have been inferred from both ellipsometry spectra and current-voltage measurements. Excepting the samples deposited at 300 °C, the lowest resistivity is recorded for the samples with 110 AZO as the main phase.

  16. Graphene oxide film as solid lubricant.

    PubMed

    Liang, Hongyu; Bu, Yongfeng; Zhang, Junyan; Cao, Zhongyue; Liang, Aimin

    2013-07-10

    As a layered material, graphene oxide (GO) film is a good candidate for improving friction and antiwear performance of silicon-based MEMS devices. Via a green electrophoretic deposition (EPD) approach, GO films with tunable thickness in nanoscale are fabricated onto silicon wafer in a water solution. The morphology, microstructure, and mechanical properties as well as the friction coefficient and wear resistance of the films were investigated. The results indicated that the friction coefficient of silicon wafer was reduced to 1/6 its value, and the wear volume was reduced to 1/24 when using GO film as solid lubricant. These distinguished tribology performances suggest that GO films are expected to be good solid lubricants for silicon-based MEMS/NEMS devices. PMID:23786494

  17. Surface chemistry and corrosion behavior of aluminum-copper systems: Air-formed films to complex conversion coatings

    NASA Astrophysics Data System (ADS)

    Chidambaram, Devicharan

    Understanding the mechanism of corrosion inhibition by carcinogenic chromates is critical to the development of environmentally safe coatings containing benign chromate substitutes. An integrated approach to correlate the surface chemistry and corrosion behavior of a wide range of systems has been undertaken. Electrochemical behavior was studied by open circuit potential (OCP) measurements, potentiodynamic polarization, and electrochemical impedance spectroscopy (EIS). Surface chemistry was studied using variable-angle X-ray photoelectron spectroscopy (VAXPS), X-ray absorption near edge spectroscopy (XANES), secondary ion mass spectroscopy (SIMS), infrared spectroscopy and synchrotron infrared micro spectroscopy (SIRMS) and Raman spectroscopy. Using SIRMS, the ASTM recommended acetone degreasing was shown to initiate pitting of AA2024-T3 via photochemical formation of acetic acid. Due to the known tendency for photoreduction of Cr6+(3d0) following soft X-ray dosage during XPS, a novel method has been developed to prevent this reduction. This method yields, for the first time, an accurate determination of the Cr6+ content of a CCC. The pretreatment of the alloy prior to conversion coating has been shown to have significant influence on the surface intermetallic distribution, composition and corrosion resistance of the initial oxide film and subsequent conversion coating. AlconoxRTM pretreatment was found to result in a highly protective surface film that inhibits the subsequent formation of CCC. The study also shows that coupling of the alloy to platinum during the bromate pretreatment increases the corrosion resistance of the subsequently formed CCC by over an order of magnitude due to reduction in surface copper content. Adsorption of chromate ion on the passive oxide film formed on the metal surface was observed to induce fixed negative charges that inhibit chloride ingress on planar surfaces. While deprotonation of the aluminum hydroxide film by chromate was

  18. Dielectric properties of aluminum silver alloy thin films in optical frequency range

    SciTech Connect

    Yang Guang; Sun Jingbo; Zhou Ji

    2011-06-15

    The dielectric properties of direct current (dc) magnetron sputtering aluminum silver alloy films in optical frequency have been quantitatively studied by variable angle spectroscopic ellipsometry. The structure and surface topography of the alloy films were characterized using scanning probe microscopy and x-ray diffraction. The Drude-Lorentz model was used to simulate the dielectric function of Al-Ag alloy films. Meanwhile, the effective medium theory has been utilized for the treatment of surface roughness. We found that the interband transition around 1.5 eV can be shifted through a variable annealing temperature and a changeable silver percentage of Al-Ag alloys.

  19. Photoacoustic Evaluation of the Mechanical Properties of Aluminum / Silicon Nitride Double-Layer Thin Films

    NASA Astrophysics Data System (ADS)

    Zhang, Feifei; Krishnaswamy, Sridhar; Lilley, Carmen M.

    2006-03-01

    In this paper, we compare two photoacoustic techniques to characterize the mechanical parameters of edge-supported aluminum and silicon nitride double-layer thin films. In a first set of experiments, a femtosecond transient pump-probe technique is used to investigate the Young's moduli of the aluminum and silicon nitride layers by launching ultra-high frequency bulk acoustic waves in the films. In a second set of experiments, dispersion curves of the A0 mode of the Lamb waves that propagate along the unsupported films are measured using a broadband photoacoustic guided-wave method. The residual stresses and flexural rigidities for the same set of double-layer membranes are determined from these dispersion curves. Comparisons of the results obtained by the two photoacoustic techniques are made.

  20. Cell Adhesion and Growth on the Anodized Aluminum Oxide Membrane.

    PubMed

    Park, Jeong Su; Moon, Dalnim; Kim, Jin-Seok; Lee, Jin Seok

    2016-03-01

    Nanotopological cues are popular tools for in vivo investigation of the extracellular matrix (ECM) and cellular microenvironments. The ECM is composed of multiple components and generates a complex microenvironment. The development of accurate in vivo methods for the investigation of ECM are important for disease diagnosis and therapy, as well as for studies on cell behavior. Here, we fabricated anodized aluminum oxide (AAO) membranes using sulfuric and oxalic acid under controlled voltage and temperature. The membranes were designed to possess three different pore and interpore sizes, AAO-1, AAO-2, and AAO-3 membranes, respectively. These membranes were used as tools to investigate nanotopology-signal induced cell behavior. Cancerous cells, specifically, the OVCAR-8 cell-line, were cultured on porous AAO membranes and the effects of these membranes on cell shape, proliferation, and viability were studied. AAO-1 membranes bearing small sized pores were found to maintain the spreading shape of the cultured cells. Cells cultured on AAO-2 and AAO-3 membranes, bearing large pore-sized AAO membranes, changed shape from spreading to rounding. Furthermore, cellular area decreased when cells were cultured on all three AAO membranes that confirmed decreased levels of focal adhesion kinase (FAK). Additionally, OVCAR-8 cells exhibited increased proliferation on AAO membranes possessing various pore sizes, indicating the importance of the nanosurface structure in regulating cell behaviors, such as cell proliferation. Our results suggest that porous-AAO membranes induced nanosurface regulated cell behavior as focal adhesion altered the intracellular organization of the cytoskeleton. Our results may find potential applications as tools in in vivo cancer research studies. PMID:27280255

  1. Anodic Aluminum Oxide (AAO) Membranes for Cellular Devices

    NASA Astrophysics Data System (ADS)

    Ventura, Anthony P.

    Anodic Aluminum Oxide (AAO) membranes can be fabricated with a highly tunable pore structure making them a suitable candidate for cellular hybrid devices with single-molecule selectivity. The objective of this study was to characterize the cellular response of AAO membranes with varying pore sizes to serve as a proof-of-concept for an artificial material/cell synapse system. AAO membranes with pore diameters ranging from 34-117 nm were achieved via anodization at a temperature of -1°C in a 2.7% oxalic acid electrolyte. An operating window was established for this setup to create membranes with through-pore and disordered pore morphologies. C17.2 neural stem cells were seeded onto the membranes and differentiated via serum withdrawal. The data suggests a highly tunable correlation between AAO pore diameter and differentiated cell populations. Analysis of membranes before and after cell culture indicated no breakdown of the through-pore structure. Immunocytochemistry (ICC) showed that AAO membranes had increased neurite outgrowth when compared to tissue culture treated (TCT) glass, and neurite outgrowth varied with pore diameter. Additionally, lower neuronal percentages were found on AAO as compared to TCT glass; however, neuronal population was also found to vary with pore diameter. Scanning electron microscopy (SEM) and ICC images suggested the presence of a tissue-like layer with a mixed-phenotype population. AAO membranes appear to be an excellent candidate for cellular devices, but more work must be completed to understand the surface chemistry of the AAO membranes as it relates to cellular response.

  2. Solution-Processed Indium Oxide Based Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Xu, Wangying

    Oxide thin-film transistors (TFTs) have attracted considerable attention over the past decade due to their high carrier mobility and excellent uniformity. However, most of these oxide TFTs are usually fabricated using costly vacuum-based techniques. Recently, the solution processes have been developed due to the possibility of low-cost and large-area fabrication. In this thesis, we have carried out a detailed and systematic study of solution-processed oxide thin films and TFTs. At first, we demonstrated a passivation method to overcome the water susceptibility of solution-processed InZnO TFTs by utilizing octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs). The unpassivated InZnO TFTs exhibited large hysteresis in their electrical characteristics due to the adsorbed water at the semiconductor surface. Formation of a SAM of ODPA on the top of InZnO removed water molecules weakly absorbed at the back channel and prevented water diffusion from the surroundings. Therefore the passivated devices exhibited significantly reduced hysteretic characteristics. Secondly, we developed a simple spin-coating approach for high- k dielectrics (Al2O3, ZrO2, Y 2O3 and TiO2). These materials were used as gate dielectrics for solution-processed In2O3 or InZnO TFTs. Among the high-k dielectrics, the Al2O3-based devices showed the best performance, which is attributed to the smooth dielectric/semiconductor interface and the low interface trap density besides its good insulating property. Thirdly, the formation and properties of Al2O3 thin films under various annealing temperatures were intensively studied, revealing that the sol-gel-derived Al2O3 thin film undergoes the decomposition of organic residuals and nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide. Besides, the Al2O 3 film was used as gate dielectric for solution-processed oxide TFTs, resulting in high mobility and low operating voltage. Finally, we proposed a green route for

  3. Investigation of contamination of thin-film aluminum filters by MMH-NTO plumes exposed to UV radiation

    NASA Astrophysics Data System (ADS)

    Gupta, Vaibhav; Wieman, Seth; Didkovsky, Leonid; Haiges, Ralf; Yao, Yuhan; Wu, Wei; Gruntman, Mike; Erwin, Dan

    2015-09-01

    Thin-film aluminum filters degrade in space with significant reduction of their Extreme Ultraviolet (EUV) transmission. This degradation was observed on the EUV Spectrophotometer (ESP) onboard the Solar Dynamics Observatory's EUV Variability Experiment and the Solar EUV Monitor (SEM) onboard the Solar and Heliospheric Observatory. One of the possible causes for deterioration of such filters over time is contamination of their surfaces from plumes coming from periodic firing of their satellite's Monomethylhydrazine (MMH) - Nitrogen Tetroxide (NTO) thrusters. When adsorbed by the filters, the contaminant molecules are exposed to solar irradiance and could lead to two possible compositions. First, they could get polymerized leading to a permanent hydrocarbon layer buildup on the filter's surface. Second, they could accelerate and increase the depth of oxidation into filter's bulk aluminum material. To study the phenomena we experimentally replicate contamination of such filters in a simulated environment by MMH-NTO plumes. We apply, Scanning Electron Microscopy and X-Ray photoelectron spectroscopy to characterize the physical and the chemical changes on these contaminated sample filter surfaces. In addition, we present our first analysis of the effects of additional protective layer coatings based on self-assembled carbon monolayers for aluminum filters. This coverage is expected to significantly decrease their susceptibility to contamination and reduce the overall degradation of filter-based EUV instruments over their mission life.

  4. High quality transparent conducting oxide thin films

    DOEpatents

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  5. Aluminum-Doped Zinc Oxide as Highly Stable Electron Collection Layer for Perovskite Solar Cells.

    PubMed

    Zhao, Xingyue; Shen, Heping; Zhang, Ye; Li, Xin; Zhao, Xiaochong; Tai, Meiqian; Li, Jingfeng; Li, Jianbao; Li, Xin; Lin, Hong

    2016-03-01

    Although low-temperature, solution-processed zinc oxide (ZnO) has been widely adopted as the electron collection layer (ECL) in perovskite solar cells (PSCs) because of its simple synthesis and excellent electrical properties such as high charge mobility, the thermal stability of the perovskite films deposited atop ZnO layer remains as a major issue. Herein, we addressed this problem by employing aluminum-doped zinc oxide (AZO) as the ECL and obtained extraordinarily thermally stable perovskite layers. The improvement of the thermal stability was ascribed to diminish of the Lewis acid-base chemical reaction between perovskite and ECL. Notably, the outstanding transmittance and conductivity also render AZO layer as an ideal candidate for transparent conductive electrodes, which enables a simplified cell structure featuring glass/AZO/perovskite/Spiro-OMeTAD/Au. Optimization of the perovskite layer leads to an excellent and repeatable photovoltaic performance, with the champion cell exhibiting an open-circuit voltage (Voc) of 0.94 V, a short-circuit current (Jsc) of 20.2 mA cm(-2), a fill factor (FF) of 0.67, and an overall power conversion efficiency (PCE) of 12.6% under standard 1 sun illumination. It was also revealed by steady-state and time-resolved photoluminescence that the AZO/perovskite interface resulted in less quenching than that between perovskite and hole transport material. PMID:26960451

  6. A colorimetric sensor based on anodized aluminum oxide (AAO) substrate for the detection of nitroaromatics.

    SciTech Connect

    Liu, Y.; Wang, H. H.; Indacochea, J. E.; Wang, M. L.

    2011-12-15

    Simple and low cost colorimetric sensors for explosives detection were explored and developed. Anodized aluminum oxide (AAO) with large surface area through its porous structure and light background color was utilized as the substrate for colorimetric sensors. Fabricated thin AAO films with thickness less than {approx} 500 nm allowed us to observe interference colors which were used as the background color for colorimetric detection. AAO thin films with various thickness and pore-to-pore distance were prepared through anodizing aluminum foils at different voltages and times in dilute sulfuric acid. Various interference colors were observed on these samples due to their difference in structures. Accordingly, suitable anodization conditions that produce AAO samples with desired light background colors for optical applications were obtained. Thin film interference model was applied to analyze the UV-vis reflectance spectra and to estimate the thickness of the AAO membranes. We found that the thickness of produced AAO films increased linearly with anodization time in sulfuric acid. In addition, the growth rate was higher for AAO anodized using higher voltages. The thin film interference formulism was further validated with a well established layer by layer deposition technique. Coating poly(styrene sulfonate) sodium salt (PSS) and poly(allylamine hydrochloride) (PAH) layer by layer on AAO thin film consistently shifted its surface color toward red due to the increase in thickness. The red shift of UV-vis reflectance was correlated quantitatively to the number of layers been assembled. This sensitive red shift due to molecular attachment (increase in thickness) on AAO substrate was applied toward nitroaromatics detection. Aminopropyltrimethoxysilane (APTS) which can be attached onto AAO nanowells covalently through silanization and attract TNT molecules was coated and applied for TNT detection. UV-vis spectra of AAO with APTS shifted to the longer wavelength side due to

  7. Patterning of Indium Tin Oxide Films

    NASA Technical Reports Server (NTRS)

    Immer, Christopher

    2008-01-01

    A relatively rapid, economical process has been devised for patterning a thin film of indium tin oxide (ITO) that has been deposited on a polyester film. ITO is a transparent, electrically conductive substance made from a mixture of indium oxide and tin oxide that is commonly used in touch panels, liquid-crystal and plasma display devices, gas sensors, and solar photovoltaic panels. In a typical application, the ITO film must be patterned to form electrodes, current collectors, and the like. Heretofore it has been common practice to pattern an ITO film by means of either a laser ablation process or a photolithography/etching process. The laser ablation process includes the use of expensive equipment to precisely position and focus a laser. The photolithography/etching process is time-consuming. The present process is a variant of the direct toner process an inexpensive but often highly effective process for patterning conductors for printed circuits. Relative to a conventional photolithography/ etching process, this process is simpler, takes less time, and is less expensive. This process involves equipment that costs less than $500 (at 2005 prices) and enables patterning of an ITO film in a process time of less than about a half hour.

  8. Metal current collect protected by oxide film

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.

    2004-05-25

    Provided are low-cost, mechanically strong, highly electronically conductive current collects and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical devices having as current interconnects a ferritic steel felt or screen coated with a protective oxide film.

  9. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  10. Interaction of ester functional groups with aluminum oxide surfaces studied using infrared reflection absorption spectroscopy.

    PubMed

    van den Brand, J; Blajiev, O; Beentjes, P C J; Terryn, H; de Wit, J H W

    2004-07-20

    The bonding of two types of ester group-containing molecules with a set of different oxide layers on aluminum has been investigated using infrared reflection absorption spectroscopy. The different oxide layers were made by giving typical surface treatments to the aluminum substrate. The purpose of the investigation was to find out what type of ester-oxide bond is formed and whether this is influenced by changes in the composition and chemistry of the oxide. The extent by which these bonded ester molecules resisted disbondment in water or substitution by molecules capable of chemisorption was also investigated. The ester groups were found to show hydrogen bonding with hydroxyls on the oxide surfaces through their carbonyl oxygens. For all oxides, the ester groups showed the same nu(C = O) carbonyl stretching vibration after adsorption, indicating very similar bonding occurs. However, the oxides showed differences in the amount of molecules bonded to the oxide surface, and a clear relation was observed with the hydroxyl concentration present on the oxide surface, which was determined from XPS measurements. The two compounds showed differences in the free to bonded nu(C = O) infrared peak shift, indicating differences in bonding strength with the oxide surface between the two types of molecules. The bonding of the ester groups with the oxide surfaces was found to be not stable in the presence of water and also not in the presence of a compound capable of chemisorption with the aluminum oxide surface. PMID:15248718

  11. The thermomechanical stability of micro-solid oxide fuel cells fabricated on anodized aluminum oxide membranes

    NASA Astrophysics Data System (ADS)

    Kwon, Chang-Woo; Lee, Jae-Il; Kim, Ki-Bum; Lee, Hae-Weon; Lee, Jong-Ho; Son, Ji-Won

    2012-07-01

    The thermomechanical stability of micro-solid oxide fuel cells (micro-SOFCs) fabricated on an anodized aluminum oxide (AAO) membrane template is investigated. The full structure consists of the following layers: AAO membrane (600 nm)/Pt anode/YSZ electrolyte (900 nm)/porous Pt cathode. The utilization of a 600-nm-thick AAO membrane significantly improves the thermomechanical stability due to its well-known honeycomb-shaped nanopore structure. Moreover, the Pt anode layer deposited in between the AAO membrane and the YSZ electrolyte preserves its integrity in terms of maintaining the triple-phase boundary (TPB) and electrical conductivity during high-temperature operation. Both of these results guarantee thermomechanical stability of the micro-SOFC and extend the cell lifetime, which is one of the most critical issues in the fabrication of freestanding membrane-type micro-SOFCs.

  12. Influence of sputtering pressure on polarity distribution of aluminum nitride thin films

    SciTech Connect

    Kamohara, Toshihiro; Akiyama, Morito; Ueno, Naohiro; Sakamoto, Michiru; Kano, Kazuhiko; Teshigahara, Akihiko; Kawahara, Nobuaki; Kuwano, Noriyuki

    2006-12-11

    The authors have investigated the influence of sputtering pressure on the polarity distribution of aluminum nitride (AlN) films. They have found that sputtering pressure strongly influences the polarity distribution of AlN films prepared on molybdenum electrodes. The polarity distribution of the AlN films was observed by piezoresponse force microscopy. The polarity orientation is decided with respect to each fine grain constituting the AlN films, and polarity conversion from Al polarity to N polarity is observed with increasing sputtering pressure. The piezoelectric response of the films changes from +3.7 to -4.4 pC/N with increasing sputtering pressure from 0.36 to 4.0 Pa.

  13. Semitransparent polymer-based solar cells with aluminum-doped zinc oxide electrodes.

    PubMed

    Wilken, Sebastian; Wilkens, Verena; Scheunemann, Dorothea; Nowak, Regina-Elisabeth; von Maydell, Karsten; Parisi, Jürgen; Borchert, Holger

    2015-01-14

    With the use of two transparent electrodes, organic polymer-fullerene solar cells are semitransparent and may be combined to parallel-connected multijunction devices or used for innovative applications like power-generating windows. A challenging issue is the optimization of the electrodes, to combine high transparency with adequate electric properties. In the present work, we study the potential of sputter-deposited aluminum-doped zinc oxide as an alternative to the widely used but relatively expensive indium tin oxide (ITO) as cathode material in semitransparent polymer-fullerene solar cells. Concerning the anode, we utilized an insulator-metal-insulator structure based on ultrathin Au films embedded between two evaporated MoO3 layers, with the outer MoO3 film (capping layer) serving as a light coupling layer. The performance of the ITO-free semitransparent polymer-fullerene solar cells was systematically studied as dependent on the thickness of the capping layer and the active layer as well as the illumination direction. These variations were found to have strong impact on the obtained photocurrent densities. We performed optical simulations of the electric field distribution within the devices using the transfer-matrix method, to analyze the origin of the current density variations in detail and provide deep insight into the device physics. With the conventional absorber materials studied here, optimized ITO-free and semitransparent devices reached 2.0% power conversion efficiency and a maximum optical transmission of 60%, with the device concept being potentially transferable to other absorber materials. PMID:25495167

  14. Improvement of plasmonic enhancement of quantum dot emission via an intermediate silicon-aluminum oxide interface

    SciTech Connect

    Wing, Waylin J.; Sadeghi, Seyed M. Campbell, Quinn

    2015-01-05

    We studied the emission of quantum dots in the presence of plasmon-metal oxide substrates, which consist of arrays of metallic nanorods embedded in amorphous silicon coated with a nanometer-thin layer of aluminum oxide on the top. We showed that the combined effects of plasmons and the silicon-aluminum oxide interface can lead to significant enhancement of the quantum efficiency of quantum dots. Our results show that such an interface can significantly enhance plasmonic effects of the nanorods via quantum dot-induced exciton-plasmon coupling, leading to partial polarization of the quantum dots' emission.

  15. Aluminum and copper in drinking water enhance inflammatory or oxidative events specifically in the brain.

    PubMed

    Becaria, Angelica; Lahiri, Debomoy K; Bondy, Stephen C; Chen, DeMao; Hamadeh, Ali; Li, Huihui; Taylor, Russell; Campbell, Arezoo

    2006-07-01

    Inflammatory and oxidative events are up-regulated in the brain of AD patients. It has been reported that in animal models of AD, exposure to aluminum (Al) or copper (Cu) enhanced oxidative events and accumulation of amyloid beta (Abeta) peptides. The present study was designed to evaluate the effect of a 3-month exposure of mice to copper sulfate (8 microM), aluminum lactate (10 or 100 microM), or a combination of the salts. Results suggest that although Al or Cu may independently initiate inflammatory or oxidative events, they may function cooperatively to increase APP levels. PMID:16697052

  16. Niobium-aluminum base alloys having improved, high temperature oxidation resistance

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G. (Inventor); Stephens, Joseph R. (Inventor)

    1991-01-01

    A niobium-aluminum base alloy having improved oxidation resistance at high temperatures and consisting essentially of 48%-52% niobium, 36%-42% aluminum, 4%-10% chromium, 0%-2%, more preferably 1%-2%, silicon and/or tungsten with tungsten being preferred, and 0.1%-2.0% of a rare earth selected from the group consisting of yttrium, ytterbium and erbium. Parabolic oxidation rates, k.sub.p, at 1200.degree. C. range from about 0.006 to 0.032 (mg/cm.sup.2).sup.2 /hr. The new alloys also exhibit excellent cyclic oxidation resistance.

  17. Large-scale fabrication of 2-D nanoporous graphene using a thin anodic aluminum oxide etching mask.

    PubMed

    Lee, Jae-Hyun; Jang, Yamujin; Heo, Keun; Lee, Jeong-Mi; Choi, Soon Hyung; Joo, Won-Jae; Hwang, Sung Woo; Whang, Dongmok

    2013-11-01

    A large-scale nanoporous graphene (NPG) fabrication method via a thin anodic aluminum oxide (AAO) etching mask is presented in this paper. A thin AAO film is successfully transferred onto a hydrophobic graphene surface under no external force. The AAO film is completely stacked on the graphene due to the van der Waals force. The neck width of the NPG can be controlled ranging from 10 nm to 30 nm with different AAO pore widening times. Extension of the NPG structure is demonstrated on a centimeter scale up to 2 cm2. AAO and NPG structures are characterized using optical microscopy (OM), Raman spectroscopy and field-emission scanning electron microscopy (FE-SEM). A field effect transistor (FET) is realized by using NPG. Its electrical characteristics turn out to be different from that of pristine graphene, which is due to the periodic nanostructures. The proposed fabrication method could be adapted to a future graphene-based nano device. PMID:24245263

  18. Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

    SciTech Connect

    Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; Esvan, Jerome; Lafont, Marie-Christine; Scheid, Emmanuel; Veith, Gabriel M.; Vahlas, Constantin

    2015-12-02

    Ti/Al2O3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties but an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.

  19. Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

    DOE PAGESBeta

    Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; Esvan, Jerome; Lafont, Marie-Christine; Scheid, Emmanuel; Veith, Gabriel M.; Vahlas, Constantin

    2015-12-02

    Ti/Al2O3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties butmore » an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.« less

  20. Epitaxial Deposition of Low-Defect Aluminum Nitride and Aluminum Gallium Nitride Films

    NASA Astrophysics Data System (ADS)

    Jain, Rakesh

    The bjective of my research was to develop low-defect AlN and AlGaN templates to enable pseudo-homoepitaxial deposition of UV-LEDs. Two approaches have been used to achieve this objective. Firstly, hydride vapor phase epitaxy (HVPE) process was used to prepare thick AlN films with lower defect density. Interactions of dislocations in thicker films result in their annihilation. Secondly, since thick films grown on sapphire tend to crack beyond a critical thickness (3-5 mum), epitaxial lateral overgrowth (ELOG) approach was employed to eliminate cracking and to further reduce the defect density. The growth technique was switched from HVPE to Metalorganic chemical vapor deposition (MOCVD) due to much improved material quality with the later method. An HVPE growth system was first designed and constructed from ground up [1]. It is a vertical system with a quartz chamber and a resistively heated furnace. AlCl3 and NH3 were used as the precursors. AlCl3 was generated by passing HCl gas (diluted with H2) through Al metal source. A linear relationship between growth rate and HCl flow rate indicated that the growth rate is limited by mass transportation. Growth parameters including temperature, chamber pressure and V/III ratio were optimized to improve the film quality. Thick films of AlN with thicknesses exceeding 25 mum were grown with growth rates as high as 20 mum/hr [2]. AFM study revealed that surface roughness of HVPE grown AlN films strongly depends on the growth rate. The lowest RMS roughness for HVPE grown film was 1.9 nm. These films had typical (002) full-width at half maximum (FWHM) values ranging from 24 -- 400 arcsec, depending on the growth rate of the respective films. The crystalline quality of the films was also found to be deteriorating as the growth rate increased. It is inferred that the growth mode changes from two dimensional to three dimensional at higher growth rates due to reduced adatom migration length. PL spectrum exhibited near-band-edge (NBE

  1. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

    2016-08-01

    Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  2. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM. PART II: STRENGTH AND DURABILITY OF LAP JOINTS

    EPA Science Inventory

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 A in thickness) were deposited onto 6111-T4 aluminum substrates in radio frequency and microwave powered reactors and used as primers for structural adhesive bonding. Processing variables such as substrate pre-treatment,...

  3. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  4. Microtensile testing and cyclic deformation of freestanding aluminum thin films

    NASA Astrophysics Data System (ADS)

    Barbosa, Nicholas, III

    2005-07-01

    Although the fatigue properties of bulk materials are well characterized for most materials, the implications of reducing the size scale of cyclically strained members to thicknesses on the order of single grains are not well defined. In this work, the cyclic deformation properties of 1 mum Al thin films are investigated. The fatigue test structures, the uniaxial load frame, the associated electronics, and the data acquisition and control software were all custom designed and fabricated in order to evaluate the monotonic and cyclic properties of thin metallic films. Test structures are 600 mum long x 100 mum wide x 1 mum thick. Monotonic tests were performed at a displacement rate of 5 mum/s and samples were pulled to failure. A value for the Young's modulus of the Al beams was determined to be 63.0 GPa +/- 5.1 GPa. The 0.2% yield stress was found to be 314.3 MPa +/- 45.2 MPa, the ultimate tensile strength was found to be 347.1 MPa +/- 56.3 MPa, and the average elongation was found to be 1.3% +/- 0.5%. Monotonic failures occurred through an oblique fracture. Fatigue tests were performed on the test structures under total strain amplitude control. Samples were fatigue under tension-tension conditions with strain amplitudes from 0.08% to 0.34%. The Al thin films were found to follow a Coffin-Manson relationship with a fatigue ductility coefficient of 0.022 and a fatigue ductility exponent of -0.278. Film fatigue fracture surfaces were similar in nature to bulk tension-tension fatigue, with the presence of slip offsets. The behavior of the 1 mum Al freestanding films, both in the monotonic and fatigue testing, was very similar to the fatigue properties of bulk materials when the significantly smaller sample grain size was considered.

  5. Influence of aluminum oxide film on thermocompression bonding of gold wire to evaporated aluminum film

    NASA Technical Reports Server (NTRS)

    Iwata, S.; Ishizaka, A.; Yamamoto, H.

    1984-01-01

    The influence of Al surface condition on the thermocompression bonding of Au wires to Al electrodes for integrated electric circuits was studied. Au wires were connected to Al electrodes by nail-head bonding after various Al surface treatments. Bonding was evaluated by measuring the wire pull strength and fraction of the number of failures at Au-Al bonds to the total number of failures. Dependence of the fraction on applied load was derived theoretically with a parameter named critical load to take into consideration the differences in Al surface condition. The relation also held explicately for various surface treatments. Characterization of the Al surface was carried out by electron microscopy for chemical analysis.

  6. Study on the fabrication of back surface reflectors in nano-crystalline silicon thin-film solar cells by using random texturing aluminum anodization

    NASA Astrophysics Data System (ADS)

    Shin, Kang Sik; Jang, Eunseok; Cho, Jun-Sik; Yoo, Jinsu; Park, Joo Hyung; Byungsung, O.

    2015-09-01

    In recent decades, researchers have improved the efficiency of amorphous silicon solar cells in many ways. One of the easiest and most practical methods to improve solar-cell efficiency is adopting a back surface reflector (BSR) as the bottom layer or as the substrate. The BSR reflects the incident light back to the absorber layer in a solar cell, thus elongating the light path and causing the so-called "light trapping effect". The elongation of the light path in certain wavelength ranges can be enhanced with the proper scale of BSR surface structure or morphology. An aluminum substrate with a surface modified by aluminum anodizing is used to improve the optical properties for applications in amorphous silicon solar cells as a BSR in this research due to the high reflectivity and the low material cost. The solar cells with a BSR were formed and analyzed by using the following procedures: First, the surface of the aluminum substrate was degreased by using acetone, ethanol and distilled water, and it was chemically polished in a dilute alkali solution. After the cleaning process, the aluminum surface's morphology was modified by using a controlled anodization in a dilute acid solution to form oxide on the surface. The oxidized film was etched off by using an alkali solution to leave an aluminum surface with randomly-ordered dimple-patterns of approximately one micrometer in size. The anodizing conditions and the anodized aluminum surfaces after the oxide layer had been removed were systematically investigated according to the applied voltage. Finally, amorphous silicon solar cells were deposited on a modified aluminum plate by using dc magnetron sputtering. The surfaces of the anodized aluminum were observed by using field-emission scanning electron microscopy. The total and the diffuse reflectances of the surface-modified aluminum sheets were measured by using UV spectroscopy. We observed that the diffuse reflectances increased with increasing anodizing voltage. The

  7. Innovative technique for tailoring intrinsic stress in reactively sputtered piezoelectric aluminum nitride films

    SciTech Connect

    Felmetsger, V. V.; Laptev, P. N.; Tanner, S. M.

    2009-05-15

    Novel technical and technological solutions enabling effective stress control in highly textured polycrystalline aluminum nitride (AlN) thin films deposited with ac (40 kHz) reactive sputtering processes are discussed. Residual stress in the AlN films deposited by a dual cathode S-Gun magnetron is well controlled by varying Ar gas pressure, however, since deposition rate and film thickness uniformity depend on gas pressure too, an independent stress control technique has been developed. The technique is based on regulation of the flux of the charged particles from ac plasma discharge to the substrate. In the ac powered S-Gun, a special stress adjustment unit (SAU) is employed for reducing compressive stress in the film by means of redistribution of discharge current between electrodes of the S-Gun leading to controllable suppression of bombardment of the growing film. This technique is complementary to AlN deposition with rf substrate bias which increases ion bombardment and shifts stress in the compressive direction, if required. Using SAU and rf bias functions ensures tailoring intrinsic stress in piezoelectric AlN films for a particular application from high compressive -700 MPa to high tensile +300 MPa and allows the gas pressure to be adjusted independently to fine control the film uniformity. The AlN films deposited on Si substrates and Mo electrodes have strong (002) texture with full width at half maximum ranging from 2 degree sign for 200 nm to 1 degree sign for 2000 nm thick films.

  8. Aluminum microstructures on anodic alumina for aluminum wiring boards.

    PubMed

    Jha, Himendra; Kikuchi, Tatsuya; Sakairi, Masatoshi; Takahashi, Hideaki

    2010-03-01

    The paper demonstrates simple methods for the fabrication of aluminum microstructures on the anodic oxide film of aluminum. The aluminum sheets were first engraved (patterned) either by laser beam or by embossing to form deep grooves on the surface. One side of the sheet was then anodized, blocking the other side by using polymer mask to form the anodic alumina. Because of the lower thickness at the bottom part of the grooves, the part was completely anodized before the complete oxidation of the other parts. Such selectively complete anodizing resulted in the patterns of metallic aluminum on anodic alumina. Using the technique, we fabricated microstructures such as line patterns and a simple wiring circuit-board-like structure on the anodic alumina. The aluminum microstructures fabricated by the techniques were embedded in anodic alumina/aluminum sheet, and this technique is promising for applications in electronic packaging and devices. PMID:20356280

  9. Interfacial Assembly of Graphene Oxide Films

    NASA Astrophysics Data System (ADS)

    Valtierrez, Cain; Ismail, Issam; Macosko, Christopher; Stottrup, Benjamin

    Controlled assembly of monolayer graphene-oxide (GO) films at the air/water interface is of interest for the development of transparent conductive thin films of chemically-derived graphene. We present experimental results from investigations of the assembly of polydisperse GO sheets at the air-water interface. GO nanosheets with lateral dimensions of greater than 10 microns were created using a modified Tour synthesis (Dimiev and Tour, 2014). GO films were generated with conventional Langmuir trough techniques to control lateral packing density. Film morphology was characterized in situ with Brewster angle microscopy. Films were transferred unto a substrate via the Langmuir-Blodgett deposition technique and imaged with fluorescence quenching microscopy. Through pH modulation of the aqueous subphase, it was found that GO's intrinsic surface activity to the interface increased with increasing subphase acidity. Finally, we found a dominant elastic contribution during uniaxial film deformation as measured by anisotropic pressure measurements. A. M. Dimiev, and J. M. Tour, ``Mechanism of GO Formation,'' ACS Nano, 8, (2014)

  10. Polarity inversion in aluminum nitride thin films under high sputtering power

    SciTech Connect

    Akiyama, Morito; Kamohara, Toshihiro; Ueno, Naohiro; Sakamoto, Michiru; Kano, Kazuhiko; Teshigahara, Akihiko; Kawahara, Nobuaki

    2007-04-09

    The authors have investigated the influence of sputtering power on the piezoelectric response of aluminum nitride (AlN) thin films prepared on titanium nitride bottom electrodes. The piezoelectric response strongly depends on the sputtering power. The polar inversion was found by piezoresponse force microscopy. The polarity gradually changes from the N polarity to Al polarity with increasing sputtering power. The piezoelectric response of the films changes from -2.7 to +4.3 pC/N with increasing sputtering power from 100 to 500 W. Furthermore, the polarity inversion from the N polarity to Al polarity is observed by increasing sputtering power during growth.

  11. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride - Technology and piezoelectric properties

    NASA Astrophysics Data System (ADS)

    Stoeckel, C.; Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-01

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d31 is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d33.

  12. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    SciTech Connect

    Stoeckel, C. Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  13. Selective thermal desorption of ultrathin aluminum oxide layers induced by electron beams

    SciTech Connect

    Kundu, Manisha; Miyata, Noriyuki; Ichikawa, Masakazu

    2001-08-06

    The mechanism of electron-beam-induced selective thermal desorption of ultrathin aluminum-oxide layer ({approx}0.4 nm) on Si(001) surface was investigated by using scanning reflection electron microscopy, reflection high-energy electron diffraction, and Auger electron spectroscopy. We found that the change in the aluminum-oxide layer composition induced by electron-stimulated oxygen desorption accounted for the selective thermal desorption of the oxide layer. A systematic increase in the vacuum-annealing temperature to 500{sup o}C, 600{sup o}C and 720{sup o}C resulted in the formation of three-dimensional metal aluminum clusters, desorption of these clusters, and creation of a nanometer-scale clean Si(001)-2 x 1 open window in the selected electron-beam-irradiated area. {copyright} 2001 American Institute of Physics.

  14. Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

    NASA Astrophysics Data System (ADS)

    Jia, Ye; Wallace, Joshua S.; Qin, Yueling; Gardella, Joseph A.; Dabiran, Amir M.; Singisetti, Uttam

    2016-04-01

    In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.

  15. Influence of polar distribution on piezoelectric response of aluminum nitride thin films

    SciTech Connect

    Kamohara, Toshihiro; Akiyama, Morito; Kuwano, Noriyuki

    2008-03-03

    The authors have investigated the influence of the crystal orientation and the polar distribution on the piezoelectric response of aluminum nitride (AlN) thin films prepared on Si, Mo/Si, and Mo/AlN-interlayer (IL)/Si substrates with increasing sputtering power. The crystal orientation of films prepared on Si improves with increasing sputtering power. On the other hand, the crystal orientation of films prepared on Mo/Si and Mo/AlN-IL/Si hardly changes. However, the piezoelectric response of all the films drastically changes from negative to positive values and the predominant polarity changes from N polarity to Al polarity. We found the proportional relationship between the polar distribution and piezoelectric response.

  16. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    SciTech Connect

    Shao, Guojian; Lou, Chaogang; Kang, Jian; Zhang, Hao

    2015-12-21

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency.

  17. Thin Films of Gallium Arsenide and Gallium Aluminum Arsenide by Metalorganic Chemical Vapor Deposition.

    NASA Astrophysics Data System (ADS)

    Look, Edward Gene Lun

    Low pressure metalorganic chemical vapor deposition (LPMOCVD) of thin films of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs) was performed in a horizontal cold wall chemical vapor deposition (CVD) reactor. The organometallic (group III) sources were triethylgallium (TEGa) and triethylaluminum (TEAl), used in conjunction with arsine (AsH_3) as the group V source. It was found that growth parameters such as growth temperature, pressure, source flow rates and temperatures have a profound effect on the film quality and composition. Depending on the particular combination of conditions, both the surface and overall morphologies may be affected. The films were nondestructively analyzed by Raman and photoreflectance spectroscopies, x-ray diffraction and rocking curve studies, scanning electron microscopy, energy dispersive spectroscopy, Hall measurements and film thicknesses were determined with a step profilometer.

  18. Growth control of carbon nanotubes using by anodic aluminum oxide nano templates.

    PubMed

    Park, Yong Seob; Choi, Won Seek; Yi, Junsin; Lee, Jaehyeong

    2014-05-01

    Anodic Aluminum Oxide (AAO) template prepared in acid electrolyte possess regular and highly anisotropic porous structure with pore diameter range from five to several hundred nanometers, and with a density of pores ranging from 10(9) to 10(11) cm(-2). AAO can be used as microfilters and templates for the growth of CNTs and metal or semiconductor nanowires. Varying anodizing conditions such as temperature, electrolyte, applied voltage, anodizing and widening time, one can control the diameter, the length, and the density of pores. In this work, we deposited Al thin film by radio frequency magnetron sputtering method to fabricate AAO nano template and synthesized multi-well carbon nanotubes on a glass substrate by microwave plasma-enhanced chemical vapor deposition (MPECVD). AAO nano-porous templates with various pore sizes and depths were introduced to control the dimension and density of CNT arrays. The AAO nano template was synthesize on glass by two-step anodization technique. The average diameter and interpore distance of AAO nano template are about 65 nm and 82 nm. The pore density and AAO nano template thickness are about 2.1 x 10(10) pores/cm2 and 1 microm, respectively. Aligned CNTs on the AAO nano template were synthesized by MPECVD at 650 degrees C with the Ni catalyst layer. The length and diameter of CNTs were grown 2 microm and 50 nm, respectively. PMID:24734654

  19. Ru nanostructure fabrication using an anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition.

    PubMed

    Kim, Woo-Hee; Park, Sang-Joon; Son, Jong-Yeog; Kim, Hyungjun

    2008-01-30

    We fabricated metallic nanostructures directly on Si substrates through a hybrid nanoprocess combining atomic layer deposition (ALD) and a self-assembled anodic aluminum oxide (AAO) nanotemplate. ALD Ru films with Ru(DMPD)(EtCp) as a precursor and O(2) as a reactant exhibited high purity and low resistivity with negligible nucleation delay and low roughness. These good growth characteristics resulted in the excellent conformality for nanometer-scale vias and trenches. Additionally, AAO nanotemplates were fabricated directly on Si and Ti/Si substrates through a multiple anodization process. AAO nanotemplates with various hole sizes (30-100 nm) and aspect ratios (2:1-20:1) were fabricated by controlling the anodizing process parameters. The barrier layers between AAO nanotemplates and Si substrates were completely removed by reactive ion etching (RIE) using BCl(3) plasma. By combining the ALD Ru and the AAO nanotemplate, Ru nanostructures with controllable sizes and shapes were prepared on Si and Ti/Si substrates. The Ru nanowire array devices as a platform for sensor devices exhibited befitting properties of good ohmic contact and high surface/volume ratio. PMID:21817499

  20. Anodic aluminum oxide and carbon nanotube-based nanostructured materials for hydrogen sensors

    NASA Astrophysics Data System (ADS)

    Rumiche, Francisco

    Hydrogen is envisioned as one of the most attractive and sustainable energy systems to power future generations. Because of their particular surface characteristics and distinctive physical properties nanoscale materials are promising candidates for the development of high performance hydrogen sensors, essential components to ensure the safe operation of the infrastructure and to facilitate the public acceptance of hydrogen technologies. This investigation is dedicated to the development of anodic aluminum oxide (AAO) and double wall carbon nanotube (DWNT)-based nanostructured materials for high performance hydrogen sensors. It addresses the controlled synthesis of nanostructures with defined geometries and sizes, study of physical and electronic properties, and the integration into functional hydrogen sensing devices. Compared to current palladium thin film sensors and nanostructured devices the AAO-based nanostructure exhibits faster response times without compromising sensitivity and selectivity. Performance of developed DWNT-based nanostructures is comparable to that for high performance hydrogen sensors fabricated with SWNTs, but with potential improvement in mechanical and thermal resistance associated to the double layer structure.

  1. Quaternary polymethacrylate-magnesium aluminum silicate films: molecular interactions, mechanical properties and tackiness.

    PubMed

    Rongthong, Thitiphorn; Sungthongjeen, Srisagul; Siepmann, Juergen; Pongjanyakul, Thaned

    2013-12-15

    The aim of this study was to investigate the impact of the addition of magnesium aluminum silicate (MAS), a natural clay, on the properties of polymeric films based on quaternary polymethacrylates (QPMs). Two commercially available aqueous QPM dispersions were studied: Eudragit(®) RS 30D and Eudragit(®) RL 30D (the dry copolymers containing 5 and 10% quaternary ammonium groups, respectively). The composite QPM-MAS films were prepared by casting. Importantly, QPM interacted with MAS and formed small flocculates prior to film formation. Continuous films were obtained up to MAS contents of 19% (referred to the QPM dry mass). ATR-FTIR and PXRD revealed that the positively charged quaternary ammonium groups of QPM interacted with negatively charged SiO(-) groups of MAS, creating nanocomposite materials. This interaction led to improved thermal stability of the composite films. The puncture strength and elongation at break of dry systems decreased with increasing MAS content. In contrast, the puncture strength of the wet QPM-MAS films (upon exposure to acidic or neutral media) increased with increasing MAS content. Furthermore, incorporation of MAS into QPM films significantly decreased the latter's tackiness in the dry and wet state. These findings suggest that nanocomposite formation between QPM and MAS in the systems can enhance the strength of wet films and decrease their tackiness. Thus, MAS offers an interesting potential as novel anti-tacking agent for QPM coatings. PMID:24144950

  2. Porous Nickel Oxide Film Sensor for Formaldehyde

    NASA Astrophysics Data System (ADS)

    Cindemir, U.; Topalian, Z.; Österlund, L.; Granqvist, C. G.; Niklasson, G. A.

    2014-11-01

    Formaldehyde is a volatile organic compound and a harmful indoor pollutant contributing to the "sick building syndrome". We used advanced gas deposition to fabricate highly porous nickel oxide (NiO) thin films for formaldehyde sensing. The films were deposited on Al2O3 substrates with prefabricated comb-structured electrodes and a resistive heater at the opposite face. The morphology and structure of the films were investigated with scanning electron microscopy and X-ray diffraction. Porosity was determined by nitrogen adsorption isotherms with the Brunauer-Emmett-Teller method. Gas sensing measurements were performed to demonstrate the resistive response of the sensors with respect to different concentrations of formaldehyde at 150 °C.

  3. Galvanostatic Ion Detrapping Rejuvenates Oxide Thin Films.

    PubMed

    Arvizu, Miguel A; Wen, Rui-Tao; Primetzhofer, Daniel; Klemberg-Sapieha, Jolanta E; Martinu, Ludvik; Niklasson, Gunnar A; Granqvist, Claes G

    2015-12-01

    Ion trapping under charge insertion-extraction is well-known to degrade the electrochemical performance of oxides. Galvanostatic treatment was recently shown capable to rejuvenate the oxide, but the detailed mechanism remained uncertain. Here we report on amorphous electrochromic (EC) WO3 thin films prepared by sputtering and electrochemically cycled in a lithium-containing electrolyte under conditions leading to severe loss of charge exchange capacity and optical modulation span. Time-of-flight elastic recoil detection analysis (ToF-ERDA) documented pronounced Li(+) trapping associated with the degradation of the EC properties and, importantly, that Li(+) detrapping, caused by a weak constant current drawn through the film for some time, could recover the original EC performance. Thus, ToF-ERDA provided direct and unambiguous evidence for Li(+) detrapping. PMID:26599729

  4. Metallic oxide switches using thick film technology

    NASA Technical Reports Server (NTRS)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  5. Combined optical gain and degradation measurements in DCM2 doped Tris-(8-hydroxyquinoline)aluminum thin-films

    NASA Astrophysics Data System (ADS)

    Čehovski, Marko; Döring, Sebastian; Rabe, Torsten; Caspary, Reinhard; Kowalsky, Wolfgang

    2016-04-01

    Organic laser sources offer the opportunity to integrate flexible and widely tunable lasers in polymer waveguide circuits, e.g. for Lab-on-Foil applications. Therefore, it is necessary to understand gain and degradation processes for long-term operation. In this paper we address the challenge of life-time (degradation) measurements of photoluminescence (PL) and optical gain in thin-film lasers. The well known guest-host system of aluminum-chelate Alq3 (Tris-(8-hydroxyquinoline)aluminum) as host material and the laser dye DCM2 (4-(Dicyanomethylene)-2- methyl-6-julolidyl-9-enyl-4H-pyran) as guest material is employed as laser active material. Sample layers have been built up by co-evaporation in an ultrahigh (UHV) vacuum chamber. 200nm thick films of Alq3:DCM2 with different doping concentrations have been processed onto glass and thermally oxidized silicon substrates. The gain measurements have been performed by the variable stripe length (VSL) method. This measurement technique allows to determine the thin-film waveguide gain and loss, respectively. For the measurements the samples were excited with UV irradiation (ƛ = 355nm) under nitrogen atmosphere by a passively Q-switched laser source. PL degradation measurements with regard to the optical gain have been done at laser threshold (approximately 3 μJ/cm2), five times above laser threshold and 10 times above laser threshold. A t50-PL lifetime of > 107 pulses could be measured at a maximum excitation energy density of 32 μJ/cm2. This allows for a detailed analysis of the gain degradation mechanism and therefore of the stimulated cross section. Depending on the DCM2 doping concentration C the stimulated cross section was reduced by 35 %. Nevertheless, the results emphasizes the necessity of the investigation of degradation processes in organic laser sources for long-term applications.

  6. Model of the radial distribution function of pores in a layer of porous aluminum oxide

    NASA Astrophysics Data System (ADS)

    Cherkas, N. L.; Cherkas, S. L.

    2016-03-01

    An empirical formula is derived to describe the quasi-periodic structure of a layer of porous aluminum oxide obtained by anodization. The formula accounts for two mechanisms of the transition from the ordered state (2D crystal) to the amorphous state. The first mechanism infers that vacancy-type defects arise, but the crystal lattice remains undestroyed. The second mechanism describes the lattice destruction. The radial distribution function of the pores in porous aluminum oxide is obtained using the Bessel transform. Comparison with a real sample is performed.

  7. Analytical model to evaluate interface characteristics of carbon nanotube reinforced aluminum oxide nanocomposites

    NASA Astrophysics Data System (ADS)

    Chen, Yao; Balani, Kantesh; Agarwal, Arvind

    2008-01-01

    This research presents an analytical method to investigate the effect of volume fraction and the number of outer walls of multiwalled carbon nanotube (MWNT) reinforcement on load carrying capability in the aluminum oxide matrix. Interfacial shear stress transfer and energy dissipation have been estimated using the Cox model. Critical energy release rate for the debonding of MWNT from the matrix is also estimated based on the crack deflection. The computed results sufficiently manifest that MWNT pullout and crack deflection contributes greatly to improved fracture toughness of carbon nanotube reinforced aluminum oxide nanocomposites.

  8. Laser sintering of magnesia with nanoparticles of iron oxide and aluminum oxide

    NASA Astrophysics Data System (ADS)

    García, L. V.; Mendivil, M. I.; Roy, T. K. Das; Castillo, G. A.; Shaji, S.

    2015-05-01

    Nanoparticles of iron oxide (Fe2O3, 20-40 nm) and aluminum oxide (Al2O3, 50 nm) were mixed in different concentrations (3, 5 and 7 wt%) in a magnesium oxide (MgO) matrix. The mixture pellet was irradiated with 532 nm output from a Q-switched Nd:YAG laser using different laser fluence and translation speed for sintering. The refractory samples obtained were analyzed using X-ray diffraction technique, scanning electron microscopy and X-ray photoelectron spectroscopy. The results showed that the samples irradiated at translation speed of 110 μm/s and energy fluence of 1.7 J/cm2 with a concentration of 5 and 7 wt% of Fe2O3 presented the MgFe2O4 spinel-type phase. With the addition of Al2O3 nanoparticles, at a translation speed of 110 μm/s and energy fluence of 1.7 J/cm2, there were the formations of MgAl2O4 spinel phase. The changes in morphologies and microstructure due to laser irradiation were analyzed.

  9. Optimization of synthesis parameters of mesoporous silica sol-gel thin films for application on 2024 aluminum alloy substrates

    NASA Astrophysics Data System (ADS)

    Recloux, Isaline; Debliquy, Marc; Baroni, Alexandra; Paint, Yoann; Lanzutti, Alex; Fedrizzi, Lorenzo; Olivier, Marie-Georges

    2013-07-01

    Silica mesoporous films were synthesized via Evaporation Induced Self-Assembly (EISA) using Pluronic P123 as templating agent and were applied on 2024 aluminum alloy for surface treatment applications. The removal of the P123 from the film required to convert the mesostructured film into a mesoporous film was particularly studied and optimized in order to be compatible with the use of an aluminum substrate. In this work, two different kinds of removal treatments were compared: calcination at high temperatures and UV/ozone treatment. Indeed, a minimum temperature of 275 °C has to be reached to completely remove the templating agent from the film. However, this treatment also leads to a decrease in mechanical properties of the aluminum substrate. In opposition, the removal by UV/ozone illumination allows getting mesoporous films at room temperature with important pore volume and high specific surface area without impacting mechanical properties of the aluminum. The effect of these treatments on mechanical properties of bare aluminum was followed by microhardness. The development of the porosity inside the film due to the elimination of the P123 was measured by combining analytical techniques (Fourier transform infrared spectroscopy FTIR, radio-frequency glow discharge optical emission spectroscopy RF-GDOES), electrochemical impedance spectroscopy (EIS) and adsorption porosimetry using a quartz crystal microbalance.

  10. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

    SciTech Connect

    Iriarte, G. F.

    2010-03-15

    Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c-axis orientation. This is due to the nonequilibrium conditions existing between the energy of the sputtered particles and the energy at the substrate surface. The application of substrate bias or substrate temperature is known to improve the adatom mobility by delivering energy to the substrate; both are hence well-established crystal growth promoting factors. It is well known that low sputtering pressures can be used as a parameter improving the growth of highly c-axis oriented aluminum nitride films at room temperature even without applying bias voltage to the substrate. Generally, the use of high pressures implies thermalization of particles within the gas phase and is considered to increase the energy gap between these and the substrate surface. However, in later experiments we have learned that the use of high processing pressures does not necessarily implies a detriment of crystallographic orientation in the films. By measuring (for the first time to the author's knowledge) the full width at half maximum value of the rocking curve of the 0002-AlN peak at several positions along the 100 mm diameter (100)-silicon wafers on which aluminum nitride thin films were deposited by reactive sputtering, a new effect was observed. Under certain processing conditions, the growth of the AlN thin films is influenced by the target magnetron. More precisely, their degree of c-axis orientation varies at wafer areas locally coincident under the target magnetron. This effect should be considered, especially where large area substrates are employed such as in silicon wafer foundry manufacturing processes.

  11. Hysteresis-free high rate reactive sputtering of niobium oxide, tantalum oxide, and aluminum oxide

    SciTech Connect

    Särhammar, Erik Berg, Sören; Nyberg, Tomas

    2014-07-01

    This work reports on experimental studies of reactive sputtering from targets consisting of a metal and its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition rate from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta, and Nb, a similar behavior is expected for most oxides.

  12. Pulsed Laser Deposition of Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Brodoceanu, D.; Scarisoreanu, N. D.; Filipescu, M. (Morar); Epurescu, G. N.; Matei, D. G.; Verardi, P.; Craciun, F.; Dinescu, M.

    2004-10-01

    Pulsed Laser Deposition (PLD) emerged as an attractive technique for growth of thin films with different properties as metals, semiconductors, ferroelectrics, biocompatibles, polymers, etc., due to its important advantages: (i) the stoichiometric transfer of a complex composition from target to film and film crystallization at lower substrate temperature respect to other techniques (due to the high energy of species in the laser plasma); (ii) single step process, synthesis and deposition; (iii) creation in plasma of species impossible to be obtained by other processes; (iv) possibility of "in situ" heterostructure deposition using a multi-target system, etc. Simple or complex oxides are between the materials widely studied for their applications. PMN is the most known relaxor ferroelectric material: it exhibits a high dielectric constant value around the (diffuse) maximum phase transition temperature, of more than 35 000 in bulk form. Other oxides as lead zirconate titanate, Pb(ZrxTi1-x)O3 simple or La doped exhibit exceptional properties as large remanent polarization, high dielectric permittivity, high piezoelectric coefficient. SrBi2Ta2O9 (SBT) is characterized by a high "fatigue resistance" (constant remanent polarization until 1012 switching cycles), low imprint, and low leakage current. The physical properties of zirconium oxide (or zirconia) -- high strength, stability at high temperatures -- make it useful for applications involving gas sensors, corrosion or heat resistant mechanical parts, high refractive index optical coatings. Of particular interest is its use as an alternative gate dielectric in metal-oxide-semiconductor (MOS) devices or capacitor in dynamic random access memory (DRAM) chips. All these oxides have been deposited by laser ablation in oxygen reactive atmosphere and some of their properties will be presented in this paper.

  13. Addressing the Limit of Detectability of Residual Oxide Discontinuities in Friction Stir Butt Welds of Aluminum using Phased Array Ultrasound

    NASA Technical Reports Server (NTRS)

    Johnston, P. H.

    2008-01-01

    This activity seeks to estimate a theoretical upper bound of detectability for a layer of oxide embedded in a friction stir weld in aluminum. The oxide is theoretically modeled as an ideal planar layer of aluminum oxide, oriented normal to an interrogating ultrasound beam. Experimentally-measured grain scattering level is used to represent the practical noise floor. Echoes from naturally-occurring oxides will necessarily fall below this theoretical limit, and must be above the measurement noise to be potentially detectable.

  14. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells.

    PubMed

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-14

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm(-2) at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm(-2)(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness. PMID:27595193

  15. The formation mechanism of aluminum oxide tunnel barriers.

    SciTech Connect

    Cerezo, A.; Petford-Long, A. K.; Larson, D. J.; Pinitsoontorn, S.; Singleton, E. W.; Materials Science Division; Univ. Oxford; Seagate Tech.

    2006-01-01

    The functional properties of magnetic tunnel junctions are critically dependant on the nanoscale morphology of the insulating barrier (usually only a few atomic layers thick) that separates the two ferromagnetic layers. Three-dimensional atom probe analysis has been used to study the chemistry of a magnetic tunnel junction structure comprising an aluminium oxide barrier formed by in situ oxidation, both in the under-oxidized and fully oxidized states and before and after annealing. Low oxidation times result in discrete oxide islands. Further oxidation leads to a more continuous, but still non-stoichiometric, barrier with evidence that oxidation proceeds along the top of grain boundaries in the underlying CoFe layer. Post-deposition annealing leads to an increase in the barrier area, but only in the case of the fully oxidized and annealed structure is a continuous planar layer formed, which is close to the stoichiometric Al:O ratio of 2:3. These results are surprising, in that the planar layers are usually considered unstable with respect to breaking up into separate islands. Analysis of the various driving forces suggests that the formation of a continuous layer requires a combination of factors, including the strain energy resulting from the expansion of the oxide during internal oxidation on annealing.

  16. Localized heating of nickel nitride/aluminum nitride nanocomposite films for data storage

    SciTech Connect

    Maya, L.; Thundat, T.; Thompson, J.R.; Stevenson, R.J.

    1995-11-13

    Nickel--aluminum nitride films were prepared by reactive sputtering of a nickel aluminide plate in a nitrogen plasma. The initial product is a nanocomposite containing the nickel as the nitride, Ni{sub 3}N, in aluminum nitride. Heating in vacuum to 500 {degree}C causes selective decomposition of the thermally labile nickel nitride leaving the aluminum nitride unaffected. The nickel nanocomposite is of interest for potential applications as recording media, as are other finely divided dispersions of ferromagnetic metals in insulating matrices. The nickel--aluminum nitride nanocomposite shows a moderate coercive field of 35 Oe at 300 K and, in common with ultrafine particles of ferromagnetic materials, shows superparamagnetic behavior. The Ni{sub 3}N/AlN nanocomposite was subjected to localized heating with the focused beam of an argon-ion laser; this created features several microns in width that could be imaged with a magnetic force microscope, thus confirming its potential as a high density data storage medium. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  17. Investigation of photoelectrochemical-oxidized p-GaSb films

    NASA Astrophysics Data System (ADS)

    Lee, Hsin-Ying; Huang, Hung-Lin; Lee, Ching-Ting; Petrovich Pchelyakov, Oleg; Andreevich Pakhanov, Nikolay

    2012-12-01

    GaSb oxide films were directly formed on the p-GaSb films using the bias-assisted photoelectrochemical (PEC) oxidation method. X-ray photoelectron spectroscopy analysis indicated that the resulting GaSb oxide films consisted of Ga2O3, Sb2O3, and Sb2O5. Different from the non-PEC oxides, the PEC derived oxide contained much more Sb2O5 than Sb2O3. Besides, the interface state density between the PEC oxide and p-GaSb was lower than that of the ordinary oxide/p-GaSb interface. The high quality of the PEC-oxidized GaSb films was attributed to the increase of the stable Sb2O5 content and decrease of the elemental Sb content in the films.

  18. Growth process of nanosized aluminum thin films by pulsed laser deposition for fluorescence enhancement.

    PubMed

    Abdellaoui, N; Pillonnet, A; Berndt, J; Boulmer-Leborgne, C; Kovacevic, E; Moine, B; Penuelas, J; Pereira, A

    2015-03-20

    Pulsed laser deposition was used to deposit aluminum thin films of various thicknesses (tAl) ranging from 5 to 40 nm and to investigate their growth process when they are deposited onto SiO2 and Y2O3. Atomic force microscopy and x-ray reflectivity measurements show that the structure of the Al films are related to the wettability properties of the underlaying layer. Onto SiO2, ultra-smooth layers of aluminum are obtained, due to a perfect wetting of SiO2 by Al. In contrast when deposited onto Y2O3, percolated Al layers are observed with apparent pore size decreasing from 200 to 82 nm as t(Al) is increased from 5 to 40 nm, respectively. This particular morphology is related to partial dewetting of Al on Y2O3. These two different growth mechanisms of aluminum depend therefore on the surface properties of SiO2 and Y2O3. The plasmon resonance of such Al nanostructures in the UV region was then analyzed by studying the coupling between Eu(3+) rare earth emitters and Al. PMID:25712708

  19. Preparation of superior lubricious amorphous carbon films co-doped by silicon and aluminum

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Yang, Jun; Zheng, Jianyun; Liang, Yongmin; Liu, Weimin

    2011-09-01

    Silicon (Si) and aluminum (Al) co-doped amorphous carbon films ((Si, Al)-C:H) were deposited on Si and stainless steel substrates by radio frequency (13.56 MHz) magnetron sputtering. The Al and Si were found to jointly regulate the hybridized carbon bonds. Mechanical properties of the films were detected by nano-indention and scratch tests. The nano-indention results revealed that all the samples exhibited good elastic recovery rate, among which the highest one was beyond 84%. Besides co-regulating the hybridizations of carbon, the co-doped Si and Al also had a common regulation on the mechanical and tribological properties. Especially, the film containing 1.6 at. % of Si and 0.9 at. % of Al showed a super-low friction (< 0.01) and a superior wear resistance in ambient air.

  20. Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films

    SciTech Connect

    Akiyama, Morito; Kamohara, Toshihiro; Kano, Kazuhiko; Teshigahara, Akihiko; Kawahara, Nobuaki

    2008-07-14

    The authors have investigated the influence of oxygen concentration in sputtering gas on the piezoelectric response of aluminum nitride (AlN) thin films prepared on silicon substrates. The piezoelectric response strongly depends on the oxygen concentration, and changes from +6.8 to -7.0 pC/N with increasing oxygen concentration from 0% to 1.2%. The polar direction drastically inverts from the Al polarity to N polarity. When the oxygen concentration in sputtering gas was 1.2%, the oxygen concentration in the AlN films was 7 at. %. Furthermore, the growth rate of the AlN films gradually decreases with increasing oxygen concentration in sputtering gas.

  1. Enhancement of oxidation resistance of NBD 200 silicon nitride ceramics by aluminum implantation

    NASA Astrophysics Data System (ADS)

    Mukundhan, Priya

    Silicon nitride (Si3N4) ceramics are leading candidates for high temperature structural applications. They have already demonstrated functional capabilities well beyond the limits of conventional metals and alloys in advanced diesel and turbine engines. However, the practical exploitation of these benefits is limited by their oxidation and associated degradation processes in chemically aggressive environments. Additives and impurities in Si3N4 segregate to the surface of Si3N 4 and accelerate its high temperature oxidation process. This study aims to investigate the oxidation behavior of Norton NBD 200 silicon nitride (hot isostatically pressed with ˜1 wt.% MgO) and its modification by aluminum surface alloying. NBD 200 samples tribochemically polished to a mirror finish (10 nm) were implanted with 5, 10, 20 and 30 at.% aluminum at multienergies and multi-doses to achieve a uniform implant depth distribution to 200 nm. Unimplanted and aluminum-implanted samples were oxidized at 800°--1100°C in 1 atm O2 for 0.5--10 hours. Oxidation kinetics was determined using profilometry in conjunction with etch patterning. The morphological, structural and chemical characteristics of the oxide were characterized by various analytical techniques such as scanning electron microscope and energy dispersive x-ray analysis, secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Oxidation of NBD 200 follows parabolic kinetics in the temperature range investigated and the process is diffusion-controlled. The oxide layers are enriched with sodium and magnesium from the bulk of the Si3N 4. The much higher oxidation rate for NBD 200 silicon nitride than for other silicon nitride ceramics with a similar amount of MgO is attributed to the presence of sodium. The rate-controlling mechanism is the outward diffusion of Mg2+ from the grain boundaries to the oxide scale. Aluminum implantation alleviates the detrimental effects of Na+ and Mg2+; not only is the rate of oxidation

  2. Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane

    NASA Astrophysics Data System (ADS)

    Jung, Woo-Gwang; Jung, Se-Hyuck; Kung, Patrick; Razeghi, Manijeh

    2006-02-01

    GaN nanotubular material is fabricated with aluminum oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminum oxide membrane with ordered nano holes is used as template. Gallium nitride is deposited at the inner wall of the nano holes in aluminum oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis condition in MOCVD is obtained successfully for the gallium nitride nanotubular material in this research. The diameter of GaN nanotube fabricated is approximately 200 ~ 250 nm and the wall thickness is about 40 ~ 50 nm. GaN nanotubular material consists of numerous fine GaN particulates with sizes ranging 15 to 30 nm. The composition of gallium nitride is confirmed to be stoichiometrically 1:1 for Ga and N by EDS. XRD and TEM analyses indicate that grains in GaN nanotubular material have nano-crystalline structure. No blue shift is found in the PL spectrum on the GaN nanotubular material fabricated in aluminum oxide template.

  3. Silicon nanoprofiling with the use of a solid aluminum oxide mask and combined 'dry' etching

    SciTech Connect

    Belov, A. N.; Demidov, Yu. A.; Putrya, M. G.; Golishnikov, A. A.; Vasilyev, A. A.

    2009-12-15

    Technological features of nanoprofiling of silicon protected by a solid mask based on porous aluminum oxide are considered. It is shown that, for a nanoprofiled silicon surface to be formed, it is advisable that combined dry etching be used including preliminary bombardment of structures with accelerated neutral atoms of an inert gas followed by reactive ion etching.

  4. In-situ measurement of the electrical conductivity of aluminum oxide in HFIR

    SciTech Connect

    Zinkle, S.J.; White, D.P.; Snead, L.L.

    1996-10-01

    A collaborative DOE/Monbusho irradiation experiment has been completed which measured the in-situ electrical resistivity of 12 different grades of aluminum oxide during HFIR neutron irradiation at 450{degrees}C. No evidence for bulk RIED was observed following irradiation to a maximum dose of 3 dpa with an applied dc electric field of 200 V/mm.

  5. Fabrication, structural characterization and sensing properties of polydiacetylene nanofibers templated from anodized aluminum oxide

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Polydiacetylene (PDA), a unique conjugated polymer, has shown its potential in the application of chem/bio-sensors and optoelectronics. In this work, we first infiltrated PDA monomer (10, 12-pentacosadiynoic acid, PCDA) melted into the anodized aluminum oxide template, and then illuminated the infil...

  6. Oxidation of silicon implanted with high-dose aluminum

    SciTech Connect

    Yang, Zunde; Du, Honghua; Withrow, S.P.

    1994-12-31

    Si(100) wafers were implanted with Al at 500 C to high doses at multi-energies and were oxidized in 1 atm flowing oxygen at 1000-1200 C. Morphology, structure, and oxidation behavior of the implanted and oxidized Si were studied using optical microscopy, atomic force microscopy, and cross-sectional transmission electron microscopy in conjunction with selected area electron diffraction and energy dispersive x-ray analysis. Large Al precipitates were formed and embedded near the surface region of the implanted Si. Oxidation rate of the Al-implanted Si wafers was lower than that of virgin Si. The unique morphology of the implanted Si results from rpaid Al diffusion and segregation promoted by hot implantation. Reduction of the oxidation rate of Si by Al implantation is attributed to preferential oxidation of Al and formation of a continuous diffusion barrier of Al{sub 2}O{sub 3}.

  7. Corrosion resistance and durability of siloxane ceramic/polymer films for aluminum alloys in marine environments

    NASA Astrophysics Data System (ADS)

    Kusada, Kentaro

    The objective of this study is to evaluate corrosion resistance and durability of siloxane ceramic/polymer films for aluminum alloys in marine environments. Al5052-H3 and Al6061-T6 were selected as substrates, and HCLCoat11 and HCLCoat13 developed in the Hawaii Corrosion Laboratory were selected for the siloxane ceramic/polymer coatings. The HCLCoat11 is a quasi-ceramic coating that has little to no hydrocarbons in its structure. The HCLCoat13 is formulated to incorporate more hydrocarbons to improve adhesion to substrate surfaces with less active functionalities. In this study, two major corrosion evaluation methods were used, which were the polarization test and the immersion test. The polarization tests provided theoretical corrosion rates (mg/dm 2/day) of bare, HCLCoat11-coated, and HCLCoat13-coated aluminum alloys in aerated 3.15wt% sodium chloride solution. From these results, the HCLCoat13-coated Al5052-H3 was found to have the lowest corrosion rate which was 0.073mdd. The next lowest corrosion rate was 0.166mdd of the HCLCoat11-coated Al5052-H3. Corrosion initiation was found to occur at preexisting breaches (pores) in the films by optical microscopy and SEM analysis. The HCLCoat11 film had many preexisting breaches of 1-2microm in diameter, while the HCLCoat13 film had much fewer preexisting breaches of less than 1microm in diameter. However, the immersion tests showed that the seawater immersion made HCLCoat13 film break away while the HCLCoat11 film did not apparently degrade, indicating that the HCLCoat11 film is more durable against seawater than the HCLCoat13. Raman spectroscopy revealed that there was some degradation of HCLCoat11 and HCLCoat13. For the HCLCoat11 film, the structure relaxation of Si-O-Si linkages was observed. On the other hand, seawater generated C-H-S bonds in the HCLCoat13 film resulting in the degradation of the film. In addition, it was found that the HCLCoat11 coating had anti-fouling properties due to its high water contact

  8. Corrosion behavior of aluminum doped diamond-like carbon thin films in NaCl aqueous solution.

    PubMed

    Khun, N W; Liu, E

    2010-07-01

    Aluminum doped diamond-like carbon (DLC:Al) thin films were deposited on n-Si(100) substrates by co-sputtering a graphite target under a fixed DC power (650 W) and an aluminum target under varying DC power (10-90 W) at room temperature. The structure, adhesion strength and surface morphology of the DLC:Al films were characterized by X-ray photoelectron spectroscopy (XPS), micro-scratch testing and atomic force microscopy (AFM), respectively. The corrosion performance of the DLC:Al films was investigated by means of potentiodynamic polarization testing in a 0.6 M NaCl aqueous solution. The results showed that the polarization resistance of the DLC:Al films increased from about 18 to 30.7 k(omega) though the corrosion potentials of the films shifted to more negative values with increased Al content in the films. PMID:21128496

  9. Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

    SciTech Connect

    Akiyama, Morito; Nagase, Toshimi; Umeda, Keiichi; Honda, Atsushi

    2013-01-14

    The authors have investigated the influence of scandium concentration on the power generation figure of merit (FOM) of scandium aluminum nitride (Sc{sub x}Al{sub 1-x}N) films prepared by cosputtering. The power generation FOM strongly depends on the scandium concentration. The FOM of Sc{sub 0.41}Al{sub 0.59}N film was 67 GPa, indicating that the FOM is five times larger than that of AlN. The FOM of Sc{sub 0.41}Al{sub 0.59}N film is higher than those of lead zirconate titanate and Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} films, which is the highest reported for any piezoelectric thin films. The high FOM of Sc{sub 0.41}Al{sub 0.59}N film is due to the high d{sub 31} and the low relative permittivity.

  10. Epitaxial two dimensional aluminum films on silicon (111) by ultra-fast thermal deposition

    SciTech Connect

    Levine, Igal; Li Wenjie; Vilan, Ayelet; Yoffe, Alexander; Feldman, Yishay; Salomon, Adi

    2012-06-15

    Aluminum thin films are known for their extremely rough surface, which is detrimental for applications such as molecular electronics and photonics, where protrusions cause electrical shorts or strong scattering. We achieved atomically flat Al films using a highly non-equilibrium approach. Ultra-fast thermal deposition (UFTD), at rates >10 nm/s, yields RMS roughness of 0.4 to 0.8 nm for 30-50 nm thick Al films on variety of substrates. For UFTD on Si(111) substrates, the top surface follows closely the substrate topography (etch pits), indicating a 2D, layer-by-layer growth. The Al film is a mixture of (100) and (111) grains, where the latter are commensurate with the in-plane orientation of the underlying Si (epitaxy). We show the use of these ultra-smooth Al films for highly reproducible charge-transport measurements across a monolayer of alkyl phosphonic acid as well as for plasmonics applications by directly patterning them by focused ion beam to form a long-range ordered array of holes. UFTD is a one-step process, with no need for annealing, peeling, or primer layers. It is conceptually opposite to high quality deposition methods, such as MBE or ALD, which are slow and near-equilibrium processes. For Al, though, we find that limited diffusion length (and good wetting) is critical for achieving ultra-smooth thin films.

  11. Low oxidation state aluminum-containing cluster anions: Cp(∗)AlnH(-), n = 1-3.

    PubMed

    Zhang, Xinxing; Ganteför, Gerd; Eichhorn, Bryan; Mayo, Dennis; Sawyer, William H; Gill, Ann F; Kandalam, Anil K; Schnöckel, Hansgeorg; Bowen, Kit

    2016-08-21

    Three new, low oxidation state, aluminum-containing cluster anions, Cp*AlnH(-), n = 1-3, were prepared via reactions between aluminum hydride cluster anions, AlnHm (-), and Cp*H ligands. These were characterized by mass spectrometry, anion photoelectron spectroscopy, and density functional theory based calculations. Agreement between the experimentally and theoretically determined vertical detachment energies and adiabatic detachment energies validated the computed geometrical structures. Reactions between aluminum hydride cluster anions and ligands provide a new avenue for discovering low oxidation state, ligated aluminum clusters. PMID:27544103

  12. Copper oxide thin films for ethanol sensing

    NASA Astrophysics Data System (ADS)

    Lamri Zeggar, M.; Bourfaa, F.; Adjimi, A.; Aida, M. S.; Attaf, N.

    2016-03-01

    The present is a study of a new active layer for ethanol (C2H5OH) vapour sensing devices based on copper oxide (CuO). CuO films were prepared by spray ultrasonic pyrolysis at a substrate temperature of 350 °C. Films microstructure was examined by X-ray diffraction and atomic force microscopy. Vapour-sensing testing was conducted using static vapour-sensing system, at different operating temperatures in the range of 100°C to 175°C for the vapour concentration of 300 ppm. The results show a high response of 45% at relatively low operating temperatures of 150°C towards ethanol vapour.

  13. Thin zinc oxide and cuprous oxide films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Jeong, Seongho

    Metal oxide semiconductors and heterojunctions made from thin films of metal oxide semiconductors have broad range of functional properties and high potential in optical, electrical and magnetic devices such as light emitting diodes, spintronic devices and solar cells. Among the oxide semiconductors, zinc oxide (ZnO) and cuprous oxide (Cu2O) are attractive because they are inexpensive, abundant and nontoxic. As synthesized ZnO is usually an intrinsic n - type semiconductor with wide band gap (3.4 eV) and can be used as the transparent conducting window layer in solar cells. As synthesized Cu2O is usually a p - type semiconductor with a band gap of 2.17 eV and has been considered as a potential material for the light absorbing layer in solar cells. I used various techniques including metal organic chemical vapor deposition, magnetron sputtering and atomic layer deposition to grow thin films of ZnO and Cu2O and fabricated Cu2O/ZnO heterojunctions. I specifically investigated the optical and electrical properties of Cu 2O thin films deposited on ZnO by MOCVD and showed that Cu2O thin films grow as single phase with [110] axis aligned perpendicular to the ZnO surface which is (0001) plane and with in-plane rotational alignment due to (220) Cu2O || (0002)ZnO; [001]Cu2O || [12¯10]ZnO epitaxy. Moreover, I fabricated solar cells based on these Cu2O/ZnO heterojunctions and characterized them. Electrical characterization of these solar cells as a function of temperature between 100 K and 300 K under illumination revealed that interface recombination and tunneling at the interface are the factors that limit the solar cell performance. To date solar cells based on Cu2O/ZnO heterojunctions had low open circuit voltages (~ 0.3V) even though the expected value is around 1V. I achieved open circuit voltages approaching 1V at low temperature (~ 100 K) and showed that if interfacial recombination is reduced these cells can achieve their predicted potential.

  14. Thickness dependence of Young's modulus and residual stress of sputtered aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Schneider, M.; Bittner, A.; Schmid, U.

    2014-11-01

    Aluminum nitride thin films are commonly used as active layer in micro-/nanomachined devices due to their piezoelectric properties. In order to predict the performance of advanced device architectures, careful modelling and simulation using techniques such as finite element analysis are of the utmost importance. An accurate knowledge of the corresponding thin film material properties is therefore required. This work focuses on the mechanical properties residual stress and Young's modulus over a wide thickness range from 100 to 1200 nm. The load-deflection technique is used to measure the bending curve of a circumferentially clamped, circular aluminum nitride diaphragm under a uniformly distributed pressure load. The bending curves are analyzed using an advanced analytical approach rather than commonly used models for load-deflection methods, thus resulting in a higher accuracy. It is found that the Young's modulus is nearly independent of film thickness, whereas the tensile residual stress exhibits a maximum at a thickness of about 600 nm. A thorough discussion of possible error sources is presented and approaches to minimize their impact are discussed.

  15. Oxidation resistance of Pb-Te-Se optical recording film

    NASA Astrophysics Data System (ADS)

    Terao, Motoyasu; Horigome, Shinkichi; Shigematsu, Kazuo; Miyauchi, Yasushi; Nakazawa, Masatoshi

    1987-08-01

    The dependence of oxidation resistance of metal-Te-Se optical recording films on film composition is investigated, as well as the effects of oxidation on laser beam recorded hole shape. The films are deposited by vacuum evaporation on substrates with a glass/UV light curing resin/cellulose nitrate structure. The role of Se in the film is to inhibit the oxidation. With at least 14% Se addition, film oxidation is completely inhibited even at 60 °C, relative humidity 95%. Depth profiles of elements in the recording films are analyzed by Auger electron and x-ray photoelectron spectroscopy to clarify the mechanisms of oxidation inhibition by Se addition. A selenium condensed layer is found at the inner part of an oxidized surface layer. The surface Te oxide layer and the Se-rich layer should inhibit the film inside from oxidizing. The role of the metallic elements In, Pb, Sn, Bi, and Sb in the film is to inhibit cracking and to decrease noise in reproduced signals by decreasing the size of crystal grains. Lead is found to be the best among these metallic elements, because the recorded hole shape is clean even when recorded after 15 days accelerated oxidation at 60 °C, relative humidity 95%. A very long storage life is expected for the Pb-Te-Se optical recording film.

  16. Metallic Thin-Film Bonding and Alloy Generation

    NASA Technical Reports Server (NTRS)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  17. Processing and microstructural evolution of alumina/aluminum alloy and aluminum nitride/aluminum alloy composites by directed melt oxidation. Ph.D. Thesis

    SciTech Connect

    Crudele, S.D.

    1994-12-31

    An experimental investigation on the directed oxidation of aluminum-zinc alloys to produce alumina/aluminum alloy composites with and without alumina preforms has been conducted. It has been suggested in the literature that Al-Mg alloys grow composites by the dissolution of a magnesia surface layer and reprecipitation of alumina in the composite. The intent of this investigation is to reveal relevant distinctions in the proposed dissolution-reprecipitation process as they apply to a more commercially interesting Zn containing alloy with a reinforcing preform. The TGA behavior and microstructural observations on the oxidation of Al-10Zn-8Si alloys were coupled with a thermodynamic and kinetic analysis to develop a composite growth model. Experiments were carried out in air at 1000-1200 C. At the higher temperatures (greater than 1100 C), Al2O3/Al composites grow by dissolving a ZnAl2O4 (spinel) surface layer. The dissolution process releases oxygen that reprecipitates in the form of Al2O3 on the existing composite, and also releases Zn and Al which migrate upward through the spinel to regenerate the surface oxide. Composite growth may only occur when the surface regenerates at a rate comparable with that of the dissolution process. At the lower temperatures, 1000 C, the composite growth is limited by the spinel regeneration process, and becomes intermittent. The addition of Mg to this alloy allows normal composite growth by the dissolution of a surface (Zn,Mg)Al2O4 layer at the lower temperatures, 980-1060 C, but leads to heterogeneous microstructures with voids as the temperature increases above approximately 1060 C. The directed oxidation of an Al-Zn alloy into porous alumina preforms yields an Al2O3/Al composite matrix which fills the preform interstices. Al-10Zn-8Si-0.25Mg alloys that are oxidized from 960-1100 C, and Al-10Zn-8Si alloys that are oxidized at 800-1000 C climb up the preform particle.

  18. Oxidative addition of the C-I bond on aluminum nanoclusters

    NASA Astrophysics Data System (ADS)

    Sengupta, Turbasu; Das, Susanta; Pal, Sourav

    2015-07-01

    Energetics and the in-depth reaction mechanism of the oxidative addition step of the cross-coupling reaction are studied in the framework of density functional theory (DFT) on aluminum nanoclusters. Aluminum metal in its bulk state is totally inactive towards carbon-halogen bond dissociation but selected Al nanoclusters (size ranging from 3 to 20 atoms) have shown a significantly lower activation barrier towards the oxidative addition reaction. The calculated energy barriers are lower than the gold clusters and within a comparable range with the conventional and most versatile Pd catalyst. Further investigations reveal that the activation energies and other reaction parameters are highly sensitive to the geometrical shapes and electronic structures of the clusters rather than their size, imposing the fact that comprehensive studies on aluminum clusters can be beneficial for nanoscience and nanotechnology. To understand the possible reaction mechanism in detail, the reaction pathway is investigated with the ab initio Born Oppenheimer Molecular Dynamics (BOMD) simulation and the Natural Bond Orbital (NBO) analysis. In short, our theoretical study highlights the thermodynamic and kinetic details of C-I bond dissociation on aluminum clusters for future endeavors in cluster chemistry.Energetics and the in-depth reaction mechanism of the oxidative addition step of the cross-coupling reaction are studied in the framework of density functional theory (DFT) on aluminum nanoclusters. Aluminum metal in its bulk state is totally inactive towards carbon-halogen bond dissociation but selected Al nanoclusters (size ranging from 3 to 20 atoms) have shown a significantly lower activation barrier towards the oxidative addition reaction. The calculated energy barriers are lower than the gold clusters and within a comparable range with the conventional and most versatile Pd catalyst. Further investigations reveal that the activation energies and other reaction parameters are highly

  19. Several braze filler metals for joining an oxide-dispersion-strengthened nickel-chromium-aluminum alloy

    NASA Technical Reports Server (NTRS)

    Gyorgak, C. A.

    1975-01-01

    An evaluation was made of five braze filler metals for joining an aluminum-containing oxide dispersion-strengthened (ODS) alloy, TD-NiCrAl. All five braze filler metals evaluated are considered suitable for joining TD-NiCrAl in terms of wettability and flow. Also, the braze alloys appear to be tolerant of slight variations in brazing procedures since joints prepared by three sources using three of the braze filler metals exhibited similar brazing characteristics and essentially equivalent 1100 C stress-rupture properties in a brazed butt-joint configuration. Recommendations are provided for brazing the aluminum-containing ODS alloys.

  20. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  1. Electrochromism: from oxide thin films to devices

    NASA Astrophysics Data System (ADS)

    Rougier, A.; Danine, A.; Faure, C.; Buffière, S.

    2014-03-01

    In respect of their adaptability and performance, electrochromic devices, ECDs, which are able to change their optical properties under an applied voltage, have received significant attention. Target applications are multifold both in the visible region (automotive sunroofs, smart windows, ophthalmic lenses, and domestic appliances (oven, fridge…)) and in the infrared region (Satellites Thermal Control, IR furtivity). In our group, focusing on oxide thin films grown preferentially at room temperature, optimization of ECDs performances have been achieved by tuning the microstructure, the stoichiometry and the cationic composition of the various layers. Herein, our approach for optimized ECDs is illustrated through the example of WO3 electrochromic layer in the visible and in the IR domain as well as ZnO based transparent conducting oxide layer. Targeting the field of printed electronics, simplification of the device architecture for low power ECDs is also reported.

  2. Combined flame and electrodeposition synthesis of energetic coaxial tungsten-oxide/aluminum nanowire arrays.

    PubMed

    Dong, Zhizhong; Al-Sharab, Jafar F; Kear, Bernard H; Tse, Stephen D

    2013-09-11

    A nanostructured thermite composite comprising an array of tungsten-oxide (WO2.9) nanowires (diameters of 20-50 nm and lengths of >10 μm) coated with single-crystal aluminum (thickness of ~16 nm) has been fabricated. The method involves combined flame synthesis of tungsten-oxide nanowires and ionic-liquid electrodeposition of aluminum. The geometry not only presents an avenue to tailor heat-release characteristics due to anisotropic arrangement of fuel and oxidizer but also eliminates or minimizes the presence of an interfacial Al2O3 passivation layer. Upon ignition, the energetic nanocomposite exhibits strong exothermicity, thereby being useful for fundamental study of aluminothermic reactions as well as enhancing combustion characteristics. PMID:23899165

  3. Oxidizing annealing effects on VO2 films with different microstructures

    NASA Astrophysics Data System (ADS)

    Dou, Yan-Kun; Li, Jing-Bo; Cao, Mao-Sheng; Su, De-Zhi; Rehman, Fida; Zhang, Jia-Song; Jin, Hai-Bo

    2015-08-01

    Vanadium dioxide (VO2) films have been prepared by direct-current magnetron sputter deposition on m-, a-, and r-plane sapphire substrates. The obtained VO2 films display different microstructures depending on the orientation of sapphire substrates, i.e. mixed microstructure of striped grains and equiaxed grains on m-sapphire, big equiaxed grains on a-sapphire and fine-grained microstructure on r-sapphire. The VO2 films were treated by the processes of oxidation in air. The electric resistance and infrared transmittance of the oxidized films were characterized to examine performance characteristics of VO2 films with different microstructures in oxidation environment. The oxidized VO2 films on m-sapphire exhibit better electrical performance than the other two films. After air oxidization for 600 s at 450 °C, the VO2 films on m-sapphire show a resistance change of 4 orders of magnitude over the semiconductor-to-metal transition. The oxidized VO2 films on a-sapphire have the highest optical modulation efficiency in infrared region compared to other samples. The different performance characteristics of VO2 films are understood in terms of microstructures, i.e. grain size, grain shape, and oxygen vacancies. The findings reveal the correlation of microstructures and performances of VO2 films, and provide useful knowledge for the design of VO2 materials to different applications.

  4. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  5. Aluminum cladding oxidation of prefilmed in-pile fueled experiments

    NASA Astrophysics Data System (ADS)

    Marcum, W. R.; Wachs, D. M.; Robinson, A. B.; Lillo, M. A.

    2016-04-01

    A series of fueled irradiation experiments were recently completed within the Advanced Test Reactor Full size plate In center flux trap Position (AFIP) and Gas Test Loop (GTL) campaigns. The conduct of the AFIP experiments supports ongoing efforts within the global threat reduction initiative (GTRI) to qualify a new ultra-high loading density low enriched uranium-molybdenum fuel. This study details the characterization of oxide growth on the fueled AFIP experiments and cross-correlates the empirically measured oxide thickness values to existing oxide growth correlations and convective heat transfer correlations that have traditionally been utilized for such an application. This study adds new and valuable empirical data to the scientific community with respect to oxide growth measurements of highly irradiated experiments, of which there is presently very limited data. Additionally, the predicted oxide thickness values are reconstructed to produce an oxide thickness distribution across the length of each fueled experiment (a new application and presentation of information that has not previously been obtainable in open literature); the predicted distributions are compared against experimental data and in general agree well with the exception of select outliers.

  6. Preparations, Properties, and Applications of Periodic Nano Arrays using Anodized Aluminum Oxide and Di-block Copolymer

    NASA Astrophysics Data System (ADS)

    Noh, Kunbae

    2011-12-01

    Self-ordered arrangements observed in various materials systems such as anodic aluminum oxide, polystyrene nanoparticles, and block copolymer are of great interest in terms of providing new opportunities in nanofabrication field where lithographic techniques are broadly used in general. Investigations on self-assembled nano arrays to understand how to obtain periodic nano arrays in an efficient yet inexpensive way, and how to realize advanced material and device systems thereof, can lead to significant impacts on science and technology for many forefront device applications. In this thesis, various aspects of periodic nano-arrays have been discussed including novel preparations, properties and applications of anodized aluminum oxide (AAO) and PS-b-P4VP (S4VP) di-block copolymer self-assembly. First, long-range ordered AAO arrays have been demonstrated. Nanoimprint lithography (NIL) process allowed a faithful pattern transfer of the imprint mold pattern onto Al thin film, and interesting self-healing and pattern tripling phenomena were observed, which could be applicable towards fabrication of the NIL master mold having highly dense pattern over large area, useful for fabrication of a large-area substrate for predictable positioning of arrayed devices. Second, S4VP diblock copolymer self-assembly and S4VP directed AAO self-assembly have been demonstrated in the Al thin film on Si substrate. Such a novel combination of two dissimilar self-assembly techniques demonstrated a potential as a versatile tool for nanopatterning formation on a Si substrate, capable of being integrated into Si process technology. As exemplary applications, vertically aligned Ni nanowires have been synthesized into an S4VP-guided AAO membrane on a Si substrate in addition to anti-dot structured [Co/Pd]n magnetic multilayer using S4VP self assembly. Third, a highly hexagonally ordered, vertically parallel aluminum oxide nanotube array was successfully fabricated via hard anodization technique

  7. Polyene Formation Catalyzed by Phosphotungstic Acid and Aluminum Chloride in Thin Films of Poly(Vinyl Alcohol)

    NASA Astrophysics Data System (ADS)

    Tretinnikov, O. N.; Sushko, N. I.; Maly, A. B.

    2016-01-01

    Formation of linear polyenes -(CH=CH) n - during thermal dehydration of thin layers (9-20 μm) of poly(vinyl alcohol) containing phosphotungstic-acid and aluminum-chloride catalysts was investigated. It was found that the concentration of long-chain ( n ≥ 8) polyenes in films containing phosphotungstic acid increased smoothly with increasing annealing time although the kinetics of the dehydration were independent of the film thickness. The polyene ( n ≥ 8) formation rate in films containing aluminum chloride dropped quickly with decreasing film thickness and increasing annealing time. As a result, long-chain polyenes practically did not form regardless of the annealing time for a film thickness of 11 μm.

  8. Controlled morphology of aluminum alloy nanopillar films: from nanohorns to nanoplates.

    PubMed

    Fujii, Takashi; Aoki, Yoshitaka; Fushimi, Koji; Makino, Takeshi; Ono, Shoji; Habazaki, Hiroki

    2010-10-01

    Nanopillar films of Al-Nb alloys have been fabricated on substrates with a regular concave cell structure by oblique angle physical vapor deposition. The concave cell structure of the substrate increases the shadow region for the flux of depositing atoms, assisting the formation of an isolated nanopillar on each cell. Depending upon the alloy composition and deposition angle, the pillar shape changes from horn-like nanopillars through triangular nanoprisms to nanoplates. The Al-Nb alloy nanoplate films with wide gaps between plates are of interest as electrodes for capacitor applications. The dielectric oxide film formed on the nanoplate film showed a capacitance more than ten times larger than that on the respective flat film, due to the enlarged surface area. PMID:20820099

  9. Oxidation/corrosion of metallic and ceramic materials in an aluminum remelt furnace. [For fluidized bed waste heat recovery systems

    SciTech Connect

    Federer, J.I.; Jones, P.J.

    1985-12-01

    Both metallic alloys and ceramic materials are candidates for the distributor plate and other components of fluidized bed waste heat recovery (FBWHR) systems. Eleven Fe-, Ni-, and Co-base alloys were exposed to air at elevated temperatures in laboratory furnaces and to flue gases in an aluminum remelt furnace to assess their resistance to oxidation and corrosion. Four SiC ceramics and two oxide ceramics were also tested in the aluminum remelt furnace. Some alloys were coated with aluminum or SiO2 by commercial processes in an effort to enhance their oxidation and corrosion resistance.

  10. Enhancement of oxidation resistance of silicon carbide by high-dose and multi-energy aluminum implantation

    SciTech Connect

    Yang, Z.; Du, H.; Libera, M.; Withrow, S.P.; Casas, L.M.; Lareau, R.T.

    1993-12-31

    High-dose and multi-energy aluminum implantation of {alpha}-SiC (0001) was carried out to achieve a broad aluminum distribution extending from the sample surface to a depth of approximately 350 nm. Oxidation resistance of the implanted crystals was studied in 1 atm flowing oxygen at 1300C. Aluminum implantation resulted in a 45% improvement in the oxidation resistance of {alpha}-SiC as compared with unimplanted crystals due to the formation of structurally dense mullite (3Al{sub 2}O{sub 3}.2SiO{sub 2}) in the oxidation scale.

  11. Structural properties of a-Si films and their effect on aluminum induced crystallization

    SciTech Connect

    Tankut, Aydin; Ozkol, Engin; Karaman, Mehmet; Turan, Rasit; Canli, Sedat

    2015-10-15

    In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size.

  12. Atomic layer deposition of aluminum sulfide thin films using trimethylaluminum and hydrogen sulfide

    SciTech Connect

    Sinha, Soumyadeep; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-15

    Sequential exposures of trimethylaluminum and hydrogen sulfide are used to deposit aluminum sulfide thin films by atomic layer deposition (ALD) in the temperature ranging from 100 to 200 °C. Growth rate of 1.3 Å per ALD cycle is achieved by in-situ quartz crystal microbalance measurements. It is found that the growth rate per ALD cycle is highly dependent on the purging time between the two precursors. Increased purge time results in higher growth rate. Surface limited chemistry during each ALD half cycle is studied by in-situ Fourier transformed infrared vibration spectroscopy. Time of flight secondary ion-mass spectroscopy measurement is used to confirm elemental composition of the deposited films.

  13. Wetting behavior and drag reduction of superhydrophobic layered double hydroxides films on aluminum

    NASA Astrophysics Data System (ADS)

    Zhang, Haifeng; Yin, Liang; Liu, Xiaowei; Weng, Rui; Wang, Yang; Wu, Zhiwen

    2016-09-01

    We present a novel method to fabricate Zn-Al LDH (layered double hydroxides) film with 3D flower-like micro-and nanostructure on the aluminum foil. The wettability of the Zn-Al LDH film can be easily changed from superhydrophilic to superhydrophobic with a simple chemical modification. The as-prepared superhydrophobic surfaces have water CAs (contact angles) of 165 ± 2°. In order to estimate the drag reduction property of the surface with different adhesion properties, the experimental setup of the liquid/solid friction drag is proposed. The drag reduction ratio for the as-prepared superhydrophobic sample is 20-30% at low velocity. Bearing this in mind, we construct superhydrophobic surfaces that have numerous technical applications in drag reduction field.

  14. Formation of linear polyenes in poly(vinyl alcohol) films catalyzed by phosphotungstic acid, aluminum chloride, and hydrochloric acid

    NASA Astrophysics Data System (ADS)

    Tretinnikov, O. N.; Sushko, N. I.; Malyi, A. B.

    2016-07-01

    Formation of linear polyenes-(CH=CH)n-via acid-catalyzed thermal dehydration of polyvinyl alcohol in 9- to 40-µm-thick films of this polymer containing hydrochloric acid, aluminum chloride, and phosphotungstic acid as dehydration catalysts was studied by electronic absorption spectroscopy. The concentration of long-chain ( n ≥ 8) polyenes in films containing phosphotungstic acid is found to monotonically increase with the duration of thermal treatment of films, although the kinetics of this process is independent of film thickness. In films containing hydrochloric acid and aluminum chloride, the formation rate of polyenes with n ≥ 8 rapidly drops as film thickness decreases and the annealing time increases. As a result, at a film thickness of less than 10-12 µm, long-chain polyenes are not formed at all in these films no matter how long thermal duration is. The reason for this behavior is that hydrochloric acid catalyzing polymer dehydration in these films evaporates from the films during thermal treatment, the evaporation rate inversely depending on film thickness.

  15. High carrier concentration p-type transparent conducting oxide films

    DOEpatents

    Yan, Yanfa; Zhang, Shengbai

    2005-06-21

    A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

  16. Aluminum chloride induced oxidative damage on cells derived from hippocampus and cortex of ICR mice.

    PubMed

    Rui, Ding; Yongjian, Yang

    2010-04-01

    Aluminum (Al) is among the most abundant elements on earth, it has been associated with the etiology of Alzheimer's disease. In the present study, AlCl(3) was administered with the dose of 10, 50 or 300 mg/kg b.wt/day through diet for 100 days. On day 101, overnight-fasted animals were sacrificed, the whole brains were removed and the cells from hippocampus or cortex were separated for the measurements: malondialdehyde (MDA), superoxide dismutase (SOD), nuclear DNA (nDNA) and mitochondrial DNA (mtDNA) damage. AlCl(3) exposure resulted in increased MDA levels accompanied by decreased activities of SOD in the cells. Comet assay demonstrated that aluminum induces nDNA damage in a dose-dependent manner, dramatically increased formation of 8-hydroxy 2-deoxyguanosine (8-OHdG) in the mtDNA isolated from the cells was also measured. The alterations seem more serious than the results displayed by the studies performed with lower doses of aluminum. However, a detailed biochemical mechanism by which aluminum accelerates mtDNA damage has not yet been identified, but the decrease in superoxide dismutase (SOD) activity and increase in MDA level in aluminum-treated mice may suggest the involvement of oxidative stress. PMID:20156420

  17. Luminescence properties of oxide coatings on aluminum alloys

    NASA Astrophysics Data System (ADS)

    Pershukevich, P. P.; Shabrov, D. V.; Osipov, V. P.; Schreiber, J.; Lapina, V. A.

    2011-09-01

    This is a study of the luminescence properties of coatings formed on aluminum alloys by anodizing in electrolytic solutions based on oxalic, sulfuric, and tartaric-sulfonic acids. At least two emission centers, with band maxima in the ranges of 390-410 and 470-510 nm, can be reliably identified in the photoluminescence spectra. The first type of center is characterized by single-band photoluminescence excitation spectra and the second, by two-band spectra. An analysis of the two-band photoluminescence excitation (PLE) spectra in the range of 470-510 nm shows that the position of the narrow short-wavelength PLE spectrum near 272 nm is independent of the type of acid used in the anodization process. The position and shape of the other PLE spectral bands depend both on the type of acid used and on the processing of the alloy or alumina surfaces. It is assumed that defect-free alumina centers are responsible for the 272 nm PLE band, while the other photoluminescence bands are caused primarily by different divacancies of oxygen ( {F_2^+} , F 2, and {F_2^{+2}} centers) whose origin is governed by the type of electrolyte.

  18. Fabrication of SERS-active substrates using silver nanofilm-coated porous anodic aluminum oxide for detection of antibiotics.

    PubMed

    Chen, Jing; Feng, Shaolong; Gao, Fang; Grant, Edward; Xu, Jie; Wang, Shuo; Huang, Qian; Lu, Xiaonan

    2015-04-01

    We have developed a silver nanofilm-coated porous anodic aluminum oxide (AAO) as a surface-enhanced Raman scattering (SERS)-active substrate for the detection of trace level of chloramphenicol, a representative antibiotic in food systems. The ordered aluminum template generated during the synthesis of AAO serves as a patterned matrix on which a coated silver film replicates the patterned AAO matrix to form a 2-dimensional ordered nanostructure. We used atomic force microscopy and scanning electron microscopy images to determine the morphology of this nanosubstrate, and characterized its localized surface plasmon resonance by ultraviolet-visible reflection. We gauged the SERS effect of this nanosubstrate by confocal micro-Raman spectroscopy (782-nm laser), finding a satisfactory and consistent performance with enhancement factors of approximately 2 × 10(4) and a limit of detection for chloramphenicol of 7.5 ppb. We applied principal component analysis to determine the limit of quantification for chloramphenicol of 10 ppb. Using electromagnetic field theory, we developed a detailed mathematical model to explain the mechanism of Raman signal enhancement of this nanosubstrate. With simple sample pretreatment and separation steps, this silver nanofilm-coated AAO substrate could detect 50 ppb chloramphenicol in milk, indicating good potential as a reliable SERS-active substrate for rapid detection of chemical contaminants in agricultural and food products. PMID:25736080

  19. Highly Transparent and Flexible Triboelectric Nanogenerators with Subwavelength-Architectured Polydimethylsiloxane by a Nanoporous Anodic Aluminum Oxide Template.

    PubMed

    Dudem, Bhaskar; Ko, Yeong Hwan; Leem, Jung Woo; Lee, Soo Hyun; Yu, Jae Su

    2015-09-23

    Highly transparent and flexible triboelectric nanogenerators (TENGs) were fabricated using the subwavelength-architectured (SWA) polydimethylsiloxane (PDMS) with a nanoporous anodic aluminum oxide (AAO) template as a replica mold. The SWA PDMS could be utilized as a multifunctional film for a triboelectric layer, an antireflection coating, and a self-cleaning surface. The nanopore arrays of AAO were formed by a simple, fast, and cost-effective electrochemical oxidation process of aluminum, which is relatively impressive for fabrication of the TENG device. For electrical contacts, the SWA PDMS was laminated on the indium tin oxide (ITO)-coated polyethylene terephthalate (PET) as a bottom electrode, and the bare ITO-coated PET (i.e., ITO/PET) was used for the top electrode. Compared to the ITO/PET, the SWA PDMS on the ITO/PET improved the transmittance from 80.5 to 83% in the visible wavelength region and also had high transmittances of >85% at wavelengths of 430-455 nm. The SWA PDMS also exhibited the hydrophobic surface with a water contact angle (θCA) of ∼115°, which can be useful for self-cleaning applications. The average transmittance (Tavg) of the entire TENG device was observed to be ∼70% over a broad wavelength range. At an external pushing frequency of 0.5 Hz, for the TENG device with the ITO top electrode, open-circuit voltage (VOC) and short-circuit current (ISC) values of ∼3.8 V and ∼0.8 μA were obtained instantaneously, respectively, which were higher than those (i.e., VOC ≈ 2.2 V, and ISC ≈ 0.4 μA) of the TENG device with a gold top electrode. The effect of external pushing force and frequency on the output device performance of the TENGs was investigated, including the device robustness. A theoretical optical analysis of SWA PDMS was also performed. PMID:26301328

  20. p-type conduction in sputtered indium oxide films

    SciTech Connect

    Stankiewicz, Jolanta; Alcala, Rafael; Villuendas, Francisco

    2010-05-10

    We report p-type conductivity in intrinsic indium oxide (IO) films deposited by magnetron sputtering on fused quartz substrates under oxygen-rich ambient. Highly oriented (111) films were studied by x-ray diffraction, optical absorption, and Hall effect measurements. We fabricated p-n homojunctions on these films.

  1. Polymer-assisted aqueous deposition of metal oxide films

    DOEpatents

    Li, DeQuan; Jia, Quanxi

    2003-07-08

    An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

  2. Modeling of oxidation of aluminum nanoparticles by using Cabrera Mott Model

    NASA Astrophysics Data System (ADS)

    Ramazanova, Zamart; Zyskin, Maxim; Martirosyan, Karen

    2012-10-01

    Our research focuses on modeling new Nanoenergetic Gas-Generator (NGG) formulations that rapidly release a large amount of gaseous products and generates shock and pressure waves. Nanoenergetic thermite reagents include mixtures of Al and metal oxides such as bismuth trioxide and iodine pentoxide. The research problem is considered a spherically symmetric case and used the Cabrera Mott oxidation model to describe the kinetics of oxide growth on spherical Al nanoparticles for evaluating reaction time which a process of the reaction with oxidizer happens on the outer part of oxide layer of aluminum ions are getting in contact with an oxidizing agent and react. We assumed that a ball of Al of radius 20 to 50 nm is covered by a thin oxide layer 2-4 nm and is surrounded by abundant amount of oxygen stored by oxidizers. The ball is rapidly heated up to ignition temperature to initiate self-sustaining oxidation reaction. As a result highly exothermic reaction is generated. In the oxide layer of excess concentrations of electrons and ions are dependent on the electric field potential with the corresponding of the Gibbs factors and that it conducts to the solution of a nonlinear Poisson equation for the electric field potential in a moving boundary domain. Motion of the boundary is determined by the gradient of a solution on the boundary. We investigated oxidation model numerically, using the COMSOL software utilizing finite element analysis. The computing results demonstrate that oxidation rate increases with the decreasing particle radius.

  3. Method of producing solution-derived metal oxide thin films

    DOEpatents

    Boyle, Timothy J.; Ingersoll, David

    2000-01-01

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  4. Effects of oxidative treatments on human hair keratin films.

    PubMed

    Fujii, T; Ito, Y; Watanabe, T; Kawasoe, T

    2012-01-01

    The effects of hydrogen peroxide and commercial bleach on hair and human hair keratin films were examined by protein solubility, scanning electron microscopy (SEM), immunofluorescence microscopy, immunoblotting, and Fourier-transform infrared spectroscopy. Protein solubility in solutions containing urea decreased when the keratin films were treated with hydrogen peroxide or bleach. Oxidative treatments promoted the urea-dependent morphological change by turning films from opaque to transparent in appearance. Immunofluorescence microscopy and immunoblotting showed that the oxidation of amino acids and proteins occurred due to the oxidative treatments, and such occurrence was more evident in the bleach-treated films than in the hydrogen peroxide-treated films. Compared with hair samples, the formation of cysteic acid was more clearly observed in the keratin films after the oxidative treatments. PMID:22487448

  5. Magnesium Recycling of Partially Oxidized, Mixed Magnesium-Aluminum Scrap through Combined Refining and Solid Oxide Membrane Electrolysis Processes

    SciTech Connect

    Xiaofei Guan; Peter A. Zink; Uday B. Pal; Adam C. Powell

    2012-01-01

    Pure magnesium (Mg) is recycled from 19g of partially oxidized 50.5wt.% Mg-Aluminum (Al) alloy. During the refining process, potentiodynamic scans (PDS) were performed to determine the electrorefining potential for magnesium. The PDS show that the electrorefining potential increases over time as the magnesium content inside the Mg-Al scrap decreases. Up to 100% percent of magnesium is refined from the Mg-Al scrap by a novel refining process of dissolving magnesium and its oxide into a flux followed by vapor phase removal of dissolved magnesium and subsequently condensing the magnesium vapor. The solid oxide membrane (SOM) electrolysis process is employed in the refining system to enable additional recycling of magnesium from magnesium oxide (MgO) in the partially oxidized Mg-Al scrap. The combination of the refining and SOM processes yields 7.4g of pure magnesium.

  6. Magnesium Recycling of Partially Oxidized, Mixed Magnesium-Aluminum Scrap Through Combined Refining and Solid Oxide Membrane (SOM) Electrolysis Processes

    SciTech Connect

    Guan, Xiaofei; Zink, Peter; Pal, Uday

    2012-03-11

    Pure magnesium (Mg) is recycled from 19g of partially oxidized 50.5wt.%Mg-Aluminum (Al) alloy. During the refining process, potentiodynamic scans (PDS) were performed to determine the electrorefining potential for magnesium. The PDS show that the electrorefining potential increases over time as the Mg content inside the Mg-Al scrap decreases. Up to 100% percent of magnesium is refined from the Mg-Al scrap by a novel refining process of dissolving magnesium and its oxide into a flux followed by vapor phase removal of dissolved magnesium and subsequently condensing the magnesium vapors in a separate condenser. The solid oxide membrane (SOM) electrolysis process is employed in the refining system to enable additional recycling of magnesium from magnesium oxide (MgO) in the partially oxidized Mg-Al scrap. The combination of the refining and SOM processes yields 7.4g of pure magnesium; could not collect and weigh all of the magnesium recovered.

  7. Amorphous Vanadium Oxide/Carbon Composite Positive Electrode for Rechargeable Aluminum Battery.

    PubMed

    Chiku, Masanobu; Takeda, Hiroki; Matsumura, Shota; Higuchi, Eiji; Inoue, Hiroshi

    2015-11-11

    Amorphous vanadium oxide/carbon composite (V2O5/C) was first applied to the positive electrode active material for rechargeable aluminum batteries. Electrochemical properties of V2O5/C were investigated by cyclic voltammetry and charge-discharge tests. Reversible reduction/oxidation peaks were observed for the V2O5/C electrode and the rechargeable aluminum cell showed the maximum discharge capacity over 200 mAh g(-1) in the first discharging. The XPS analyses after discharging and the following charging exhibited that the redox of vanadium ion in the V2O5/C active material occurred during discharging and charging, and the average valence of V changed between 4.14 and 4.85. PMID:26489385

  8. Fabrication of polymeric nano-batteries array using anodic aluminum oxide templates.

    PubMed

    Zhao, Qiang; Cui, Xiaoli; Chen, Ling; Liu, Ling; Sun, Zhenkun; Jiang, Zhiyu

    2009-02-01

    Rechargeable nano-batteries were fabricated in the array pores of anodic aluminum oxide (AAO) template, combining template method and electrochemical method. The battery consisted of electropolymerized PPy electrode, porous TiO2 separator, and chemically polymerized PAn electrode was fabricated in the array pores of two-step anodizing aluminum oxide (AAO) membrane, based on three-step assembling method. It performs typical electrochemical battery behavior with good charge-discharge ability, and presents a capacity of 25 nAs. AFM results show the hexagonal array of nano-batteries' top side. The nano-battery may be a promising device for the development of Micro-Electro-Mechanical Systems (MEMS), and Nano-Electro-Mechanical Systems (NEMS). PMID:19441424

  9. Oxidation behavior of nickel-chromium-aluminum-yttrium - Magnesium oxide and nickel-chromium-aluminum-yttrium - zirconate type of cermets

    NASA Technical Reports Server (NTRS)

    Zaplatynsky, I.

    1976-01-01

    The 1100 and 1200 C cyclic oxidation resistance of dense Ni-Cr-Al-Y - MgO, Ni-Cr-Al-Y - CaZrO3, Ni-Cr-Al-Y - SrZrO3, Ni-Cr-Al-Y - MgZro3 cermets and a 70 percent dense Ni-Cr-Al-Y developmental material was determined. The cermets contained 60 and 50 volume percent of Ni-Cr-Al-Y which formed a matrix with the oxide particles imbedded in it. The cermets containing MgO were superior to cermets based on zirconates and to the porous Ni-Cr-Al-Y material.

  10. Enhanced adsorptive removal of p-nitrophenol from water by aluminum metal-organic framework/reduced graphene oxide composite.

    PubMed

    Wu, Zhibin; Yuan, Xingzhong; Zhong, Hua; Wang, Hou; Zeng, Guangming; Chen, Xiaohong; Wang, Hui; Zhang, Lei; Shao, Jianguang

    2016-01-01

    In this study, the composite of aluminum metal-organic framework MIL-68(Al) and reduced graphene oxide (MA/RG) was synthesized via a one-step solvothermal method, and their performances for p-nitrophenol (PNP) adsorption from aqueous solution were systematically investigated. The introduction of reduced graphene oxide (RG) into MIL-68(Al) (MA) significantly changes the morphologies of the MA and increases the surface area. The MA/RG-15% prepared at RG-to-MA mass ratio of 15% shows a PNP uptake rate 64% and 123% higher than MIL-68(Al) and reduced graphene oxide (RG), respectively. The hydrogen bond and π - π dispersion were considered to be the major driving force for the spontaneous and endothermic adsorption process for PNP removal. The adsorption kinetics, which was controlled by film-diffusion and intra-particle diffusion, was greatly influenced by solution pH, ionic strength, temperature and initial PNP concentration. The adsorption kinetics and isotherms can be well delineated using pseudo-second-order and Langmuir equations, respectively. The presence of phenol or isomeric nitrophenols in the solution had minimal influence on PNP adsorption by reusable MA/RG composite. PMID:27181188

  11. Effect of conditions of thermal treatment on the porous structure of an aluminum oxide-containing nanofibrous aerogel

    NASA Astrophysics Data System (ADS)

    Markova, E. B.; Krasil'nikova, O. K.; Grankina, T. Yu.; Serov, Yu. M.

    2016-08-01

    The effect the conditions of thermal treatment have on a specific surface and the number of primary adsorption centers is studied. The relationship between changing adsorption characteristics and changes in the structure of nanofibrous aluminum oxide is considered.

  12. Effects of additives on volume change on melting, surface tension, and viscosity of liquid aluminum oxide

    NASA Technical Reports Server (NTRS)

    Bates, J. L.; Rasmussen, J. J.

    1972-01-01

    The effects of various oxide additives on the volume change on melting, the surface tension, and the viscosity of liquid Al2O3 were studied. Additives of Sm2O3, MgO, and Y2O3 which form solid solutions, compounds, and multiphase solids with Al2O3 were studied. A review of the property data for Al2O3 and Al2O3 containing oxide additives is presented. Oxide additives to Al2O3 reduce the volume change on melting and with the exception of SiO2 lower the viscosity; surface tensions change with oxide additives, but changes vary with different container material. Viscosity and volume change on melting appeared to be significantly more important for studying the properties of liquid oxides than surface tension. Supercooling of 270 K of yttrium aluminum garnet was observed.

  13. Energy dependence of the trapping of uranium atoms by aluminum oxide surfaces

    NASA Technical Reports Server (NTRS)

    Librecht, K. G.

    1979-01-01

    The energy dependence of the trapping probability for sputtered U-235 atoms striking an oxidized aluminum collector surface at energies between 1 eV and 184 eV was measured. At the lowest energies, approximately 10% of the uranium atoms are not trapped, while above 10 eV essentially all of them stick. Trapping probabilities averaged over the sputtered energy distribution for uranium incident on gold and mica are also presented.

  14. Surface conductivity of the single crystal aluminum oxide in vacuum and caesium vapors

    SciTech Connect

    Vasilchenko, A.V.; Izhvanov, O.L.

    1996-03-01

    Results of measurements of surface conductivity of single-crystal aluminum oxide samples in vacuum and cesium vapors at T=620{endash}830 K and P{sub Cs}=0.13{endash}2 Pa are shown in the paper. Analysis of caesium vapor influence is carried out and ultimate characteristics of samples conductivity under operation conditions in thermionic nuclear power system (NPP) TFE are estimated. {copyright} {ital 1996 American Institute of Physics.}

  15. Elaboration of aluminum oxide-based graphite containing castables

    NASA Astrophysics Data System (ADS)

    Zhou, Ningsheng

    The aim of this work was set to develop effective and practicable new methods to incorporate natural flake graphite (FG) into the Al2O 3 based castables for iron and steel making applications. Three approaches, viz. micro-pelletized graphite (PG), crushed briquette of Al2O3-graphite (BAG) and TiO2 coated graphite (CFG), have been developed to insert flake graphite into Al2O 3 rich Al2O3-SiC based and Al2O 3-MgO based castables. These approaches were put into effect as countermeasures against the problems caused by FG in order: (1) to agglomerate the FG powders so as to decrease the specific surface area; (2) to diminish the density difference by using crushed carbon bonded compact of oxide-FG mixture; (3) to modify the surface of the flake graphite by forming hydrophilic coating; (4) to control the dispersion state of the graphite in the castable to maintain enough bonding strength; and (5) to use appropriate antioxidants to inhibit the oxidation of FG. The whole work was divided into two stages. In stage one, Al2O 3-SiC-C castables were dealt with to compare 4 modes of inserting graphite, i.e., by PG, BAG, CFG and FG. Overall properties were measured, all in correlation with graphite amount and incorporating mode. In stage two, efforts were made to reduce water demand in the Al2O3-MgO castables system. For this purpose, the matrix portion of the castable mixes was extracted and a coaxial double cylinder viscometer was adopted to investigate rheological characteristics of the matrix slurries vs. 4 kinds of deflocculants, through which the best deflocculant and its appropriate amount were found. Efforts were then made to add up to 30% MgO into the castables, using a limited amount of powders (<0.3 mm), the rest being increased in size gradually up to the top size of 4.76 mm. Into the optimized Al2O3-MgO castables graphite was incorporated by PG and BAG, and 4 kinds of antioxidants, Si, SiC, B4C and ZrB2, were added respectively or in combination. Overall properties

  16. Tunneling Spectroscopy Studies of Urea, Thiourea, and Selected Phosphonate Molecules Adsorbed on Aluminum Oxide

    NASA Astrophysics Data System (ADS)

    Crowder, Charles D.

    Experimental and calculated inelastic electron tunneling intensities were compared for several of the vibrational modes of thiourea adsorbed on aluminum oxide. The partial charge model of Kirtley, Scalapino, and Hansma was used to compute the theoretical intensities of each mode. The required partial charges were determined using a method developed by Momany. Essentially, the Coulomb potential resulting from point charges located at atom sites was fitted to the quantum mechanical electrostatic potential of a molecule calculated from Hartree-Fock theory. The effect of a vibrational mode pattern on the electrostatic potential of a molecule was investigated. This effect could not be acceptably modeled with a single point charge located on each atom, so one charge was used to represent the positive nucleus of each atom and a second charge was used to represent the valence cloud. The valence charge was allowed to move independently of the nuclear charge during a molecular vibration, and the motions of the two charges were found to be very different for hydrogen atoms. This model gave very reasonable agreement between the theoretical and observed relative intensities for the in plane vibrational modes of thiourea. An acceptable set of out of plane force constants could not be found. This caused problems in the interpretation of the out of plane relative intensities. Based on the in plane modes, it was concluded that thiourea bonded to aluminum oxide with the sulfur atom near the oxide and the sulfur-carbon bond perpendicular to the aluminum oxide surface. Quantum mechanical electrostatic potentials were also calculated for urea, phosphoric acid (PA), methylphosphonic acid (MPA), hydroxymethylphosphonic acid (HMP), and nitrotrismethylphosphonic acid (NTMP). Electron tunneling spectra were taken for PA, HMP and NTMP, and the observed frequencies were compared to values obtained from Fourier transform infrared, infrared and Raman spectroscopy. Upward shifts in the P=O and P

  17. Applicability of poorly crystalline aluminum oxide for adsorption of arsenate.

    PubMed

    Park, Youn-Jong; Yang, Jae-Kyu; Lee, Seung-Mok; Choi, Sang-Il

    2011-01-01

    This study examined the characteristics of arsenate adsorption on poorly crystalline oxide (PCAO) which was obtained from recycling of dry sanding powders (DSP) produced during sanding and sawing process in a decorative interior company. After calcinating DSP at 550°C, poorly crystalline oxide (PCAO) was obtained as an adsorbent. From the batch adsorption experiments, arsenate was completely removed up to the concentration of 10 mg/L by PCAO. The stability of PCAO as an adsorbent was evaluated at pH 7 and found that the arsenate adsorbed on PCAO was stable for 24 h. The predominant interaction between arsenate and PCAO was thought to be a strong chemical bond by spectroscopic analysis. The arsenate adsorption behavior onto PCAO was satisfactorily simulated with MINEQL+, suggesting that arsenate formed inner-sphere complexes with the surface of PCAO by chemisorption. Meanwhile, the presence of competitive anions such as PO(4) (3-), SO(4) (2-) and CO(3) (2-) decreased somewhat the removal efficiency of arsenate and the effects of competing anions on the adsorption of arsenate were in the order of PO(4) (3-) > SO(4) (2-) > CO(3) (2-) under pH 6. The application of PCAO to the real mine drainage was also carried out. Although the adsorption of arsenic on the PCAO was slightly decreased rather than that removed from synthetic wastewater due to competitive sorption by multiple ions, it was possible to meet the national discharge standard limit with increasing adsorbent concentration. PMID:21942390

  18. Role of Exogenous Melatonin on Cell Proliferation and Oxidant/Antioxidant System in Aluminum-Induced Renal Toxicity.

    PubMed

    Karabulut-Bulan, Omur; Bayrak, Bertan Boran; Arda-Pirincci, Pelin; Sarikaya-Unal, Guner; Us, Huseyin; Yanardag, Refiye

    2015-11-01

    Aluminum has toxic potential on humans and animals when it accumulates in various tissues. It was shown in a number of studies that aluminum causes oxidative stress by free radical formation and lipid peroxidation in tissues and thus may cause damage in target organs. Although there are numerous studies investigating aluminum toxicity, biochemical mechanisms of the damage caused by aluminum have yet to be explained. Melatonin produced by pineal gland was shown to be an effective antioxidant. Since kidneys are target organs for aluminum accumulation and toxicity, we have studied the role of melatonin against aluminum-induced renal toxicity in rats. Wistar albino rats were divided into five groups. Group I served as control, and received only physiological saline; group II served as positive control for melatonin, and received ethanol and physiological saline; group III received melatonin (10 mg/kg); group IV received aluminum sulfate (5 mg/kg) and group V received aluminum sulfate and melatonin (in the same dose), injected three times a week for 1 month. Administration of aluminum caused degenerative changes in renal tissues, such as increase in metallothionein immunoreactivity and decrease in cell proliferation. Moreover, uric acid and lipid peroxidation levels and xanthine oxidase activity increased, while glutathione, catalase, superoxide dismutase, paraoxonase 1, glucose-6-phosphate dehydrogenase, and sodium potassium ATPase activities decreased. Administration of melatonin mostly prevented these symptoms. Results showed that melatonin is a potential beneficial agent for reducing damage in aluminum-induced renal toxicity. PMID:25855374

  19. Determination of Ideal Broth Formulations Needed to Prepare Hydrous Aluminum Oxide Microspheres via the Internal Gelation Process

    SciTech Connect

    Collins, Jack Lee; Pye, S. L.

    2009-02-01

    A simple test-tube methodology was used to determine optimum process parameters for preparing hydrous aluminum oxide microspheres by the internal gelation process. Broth formulations of aluminum, hexamethylenetetramine, and urea were found that can be used to prepare hydrous aluminum oxide gel spheres in the temperature range of 60-90 C. A few gel-forming runs were made in which microspheres were prepared with some of these formulations in order to equate the test-tube gelation times with actual gelation times. These preparations confirmed that the test-tube methodology is reliable for determining the ideal broths.

  20. Film adhesive enhances neutron radiographic images

    NASA Technical Reports Server (NTRS)

    Reed, M. W.

    1978-01-01

    Resolution of neutron radiographic images of thermally conductive film is increased by replacing approximately 5 percent of aluminum powder, which provides thermal conductivity, with gadolinium oxide. Oxide is also chemically stable.

  1. Systematic review of potential health risks posed by pharmaceutical, occupational and consumer exposures to metallic and nanoscale aluminum, aluminum oxides, aluminum hydroxide and its soluble salts

    PubMed Central

    Willhite, Calvin C.; Karyakina, Nataliya A.; Yokel, Robert A.; Yenugadhati, Nagarajkumar; Wisniewski, Thomas M.; Arnold, Ian M. F.; Momoli, Franco; Krewski, Daniel

    2016-01-01

    Aluminum (Al) is a ubiquitous substance encountered both naturally (as the third most abundant element) and intentionally (used in water, foods, pharmaceuticals, and vaccines); it is also present in ambient and occupational airborne particulates. Existing data underscore the importance of Al physical and chemical forms in relation to its uptake, accumulation, and systemic bioavailability. The present review represents a systematic examination of the peer-reviewed literature on the adverse health effects of Al materials published since a previous critical evaluation compiled by Krewski et al. (2007). Challenges encountered in carrying out the present review reflected the experimental use of different physical and chemical Al forms, different routes of administration, and different target organs in relation to the magnitude, frequency, and duration of exposure. Wide variations in diet can result in Al intakes that are often higher than the World Health Organization provisional tolerable weekly intake (PTWI), which is based on studies with Al citrate. Comparing daily dietary Al exposures on the basis of “total Al” assumes that gastrointestinal bioavailability for all dietary Al forms is equivalent to that for Al citrate, an approach that requires validation. Current occupational exposure limits (OELs) for identical Al substances vary as much as 15-fold. The toxicity of different Al forms depends in large measure on their physical behavior and relative solubility in water. The toxicity of soluble Al forms depends upon the delivered dose of Al+3 to target tissues. Trivalent Al reacts with water to produce bidentate superoxide coordination spheres [Al(O2)(H2O4)+2 and Al(H2O)6+3] that after complexation with O2•−, generate Al superoxides [Al(O2•)](H2O5)]+2. Semireduced AlO2• radicals deplete mitochondrial Fe and promote generation of H2O2, O2•− and OH•. Thus, it is the Al+3-induced formation of oxygen radicals that accounts for the oxidative damage that

  2. Systematic review of potential health risks posed by pharmaceutical, occupational and consumer exposures to metallic and nanoscale aluminum, aluminum oxides, aluminum hydroxide and its soluble salts.

    PubMed

    Willhite, Calvin C; Karyakina, Nataliya A; Yokel, Robert A; Yenugadhati, Nagarajkumar; Wisniewski, Thomas M; Arnold, Ian M F; Momoli, Franco; Krewski, Daniel

    2014-10-01

    oxidative damage that leads to intrinsic apoptosis. In contrast, the toxicity of the insoluble Al oxides depends primarily on their behavior as particulates. Aluminum has been held responsible for human morbidity and mortality, but there is no consistent and convincing evidence to associate the Al found in food and drinking water at the doses and chemical forms presently consumed by people living in North America and Western Europe with increased risk for Alzheimer's disease (AD). Neither is there clear evidence to show use of Al-containing underarm antiperspirants or cosmetics increases the risk of AD or breast cancer. Metallic Al, its oxides, and common Al salts have not been shown to be either genotoxic or carcinogenic. Aluminum exposures during neonatal and pediatric parenteral nutrition (PN) can impair bone mineralization and delay neurological development. Adverse effects to vaccines with Al adjuvants have occurred; however, recent controlled trials found that the immunologic response to certain vaccines with Al adjuvants was no greater, and in some cases less than, that after identical vaccination without Al adjuvants. The scientific literature on the adverse health effects of Al is extensive. Health risk assessments for Al must take into account individual co-factors (e.g., age, renal function, diet, gastric pH). Conclusions from the current review point to the need for refinement of the PTWI, reduction of Al contamination in PN solutions, justification for routine addition of Al to vaccines, and harmonization of OELs for Al substances. PMID:25233067

  3. Crystalline state and acoustic properties of zinc oxide films

    SciTech Connect

    Kal'naya, G.I.; Pryadko, I.F.; Yarovoi, Yu.A.

    1988-08-01

    We study the effect of the crystalline state of zinc oxide films, prepared by magnetron sputtering, on the efficiency of SAW transducers based on the layered system textured ZnO film-interdigital transducer (IDT)-fused quartz substrate. The crystalline perfection of the ZnO films was studied by the x-ray method using a DRON-2.0 diffractometer. The acoustic properties of the layered system fused quartz substrate-IDT-zinc oxide film were evaluated based on the squared electromechanical coupling constant K/sup 2/ for strip filters. It was found that K/sup 2/ depends on the magnitude of the mechanical stresses. When zinc oxide films are deposited by the method of magnetron deposition on fused quartz substrates, depending on the process conditions limitations can arise on the rate of deposition owing to mechanical stresses, which significantly degrade the efficiency of SAW transducers based on them, in the ZnO films.

  4. Resputtering of zinc oxide films prepared by radical assisted sputtering

    SciTech Connect

    Song Qiuming; Jiang Yousong; Song Yizhou

    2009-02-15

    Sputtering losses of zinc oxide films prepared by radical assisted sputtering were studied. It was found that the sputtering loss can be very severe in oxygenous sputtering processes of zinc oxide films. In general, resputtering caused by negative oxygen ions dominates the sputtering loss, while diffuse deposition plays a minor role. Resputtering is strongly correlated with the sputtering threshold energy of the deposited films and the concentration of O{sup -} in the sputtering zone. The balance between the oxygen concentration in the sputtering zone and the oxidation degree of the growing films depends on the sputtering rate. Our research suggests that a lower oxygen concentration in the sputtering zone and a higher oxidation degree of the growing films are favorable for reducing the resputtering losses. The sputtering loss mechanisms discussed in this work are also helpful for understanding the deposition processes of other magnetron sputtering systems.

  5. Amorphous tin-cadmium oxide films and the production thereof

    DOEpatents

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  6. Rapid Deposition of Titanium Oxide and Zinc Oxide Films by Solution Precursor Plasma Spray

    NASA Astrophysics Data System (ADS)

    Ando, Yasutaka

    In order to develop a high rate atmospheric film deposition process for functional films, as a basic study, deposition of titanium oxide film and zinc oxide film by solution precursor plasma spray (SPPS) was conducted in open air. Consequently, in the case of titanium oxide film deposition, anantase film and amorphous film as well as rutile film could be deposited by varying the deposition distance. In the case of anatase dominant film, photo-catalytic properties of the films could be confirmed by wettability test. In addition, the dye sensitized sollar cell (DSC) using the TiO2 film deposited by this SPPS technique as photo voltaic device generates 49mV in OCV. On the other hand, in the case of zinc oxide film deposition, it was proved that well crystallized ZnO films with photo catalytic properties could be deposited. From these results, this process was found to have high potential for high rate functional film deposition process conducted in the air.

  7. Chemistry between magnesium and multiple molecules in tris(8-hydroxyquinoline) aluminum films.

    PubMed

    Meloni, Simone; Palma, Amedeo; Schwartz, Jeffrey; Kahn, Antoine; Car, Roberto

    2003-07-01

    Metal organic contacts are at the basis of devices such as organic light emitting diodes (OLEDs). Here, we report a theoretical investigation of the chemical interaction between a Mg atom and an organic film made of tris(8-hydroxyquinoline)aluminum (Alq3) molecules. The latter is modeled either by an isolated molecule or by a bulk crystal. Using first-principles molecular dynamics for structural optimization, we find that an isolated Alq3 molecule and a Mg atom form an ion-pair. However, when the metal atom interacts with molecules in a bulk crystalline environment, we find that an organometallic complex is energetically preferred over the ion-pair. The complex formation is an effect of the environment which makes possible the interaction of the metal atom with several adjacent molecules. Here, our calculated O(1s) and N(1s) core level shifts agree well with recent experimental data on Alq3 films exposed to Mg. Our results resolve the apparent contradiction between experiment and predictions made in previous calculations in which a single Alq3 molecule was used to model a thin film. PMID:12822992

  8. Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature

    SciTech Connect

    Belkerk, B. E.; Bensalem, S.; Soussou, A.; Carette, M.; Djouadi, M. A.; Scudeller, Y.; Al Brithen, H.

    2014-12-01

    In this paper, we report on investigation concerning the substrate-dependent thermal conductivity (k) of Aluminum Nitride (AlN) thin-films processed at low temperature by reactive magnetron sputtering. The thermal conductivity of AlN films grown at low temperature (<200 °C) on single-crystal silicon (Si) and amorphous silicon nitride (SiN) with thicknesses ranging from 100 nm to 4000 nm was measured with the transient hot-strip technique. The k values for AlN films on SiN were found significantly lower than those on Silicon consistently with their microstructures revealed by X-ray diffraction, high resolution scanning electron microscopy, and transmission electron microscopy. The change in k was due to the thermal boundary resistance found to be equal to 10 × 10{sup −9} Km{sup 2}W{sup −1} on SiN against 3.5 × 10{sup −9} Km{sup 2}W{sup −1} on Si. However, the intrinsic thermal conductivity was determined with a value as high as 200 Wm{sup −1}K{sup −1} whatever the substrate.

  9. Electrophoretic deposition of uniformly distributed TiO2 nanoparticles using an anodic aluminum oxide template for efficient photolysis.

    PubMed

    Wang, Gou-Jen; Chou, Shi-Wei

    2010-03-19

    In this study, a novel method for fabricating a high efficiency titanium dioxide photocatalyst is presented. Radio frequency (RF) magnetron sputtering was employed to grow 3D nano-structured Au thin films using the barrier-layer side of anodic aluminum oxide (AAO) as the template. The template was prepared by immersing this side of an AAO film into a 30 wt% phosphoric acid solution to modify the surface of the barrier layer in such a manner that a contrasting surface was obtained. The electrophoretic deposition method was then implemented to uniformly deposit TiO(2) nanoparticles on the 3D nano-structured Au electrode. The efficiency of the proposed photocatalyst, in terms of the photolysis efficiency, was measured using proton-motive-force driving chloroplastmimic photovoltaics. Experiments were carried out to demonstrate the photolysis efficiency of the proposed 3D nano-structured TiO(2) photocatalyst, which showed a 10-fold increase over that of Degussa P25 plane TiO(2). The photocurrent could be further enhanced by the deposition of a sensitized dye, such as N3, which extended the absorption spectrum from the UV range to the visible light range. PMID:20179332

  10. Application of diffusion barriers to the refractory fibers of tungsten, columbium, carbon and aluminum oxide

    NASA Technical Reports Server (NTRS)

    Douglas, F. C.; Paradis, E. L.; Veltri, R. D.

    1973-01-01

    A radio frequency powered ion-plating system was used to plate protective layers of refractory oxides and carbide onto high strength fiber substrates. Subsequent overplating of these combinations with nickel and titanium was made to determine the effectiveness of such barrier layers in preventing diffusion of the overcoat metal into the fibers with consequent loss of fiber strength. Four substrates, five coatings, and two metal matrix materials were employed for a total of forty material combinations. The substrates were tungsten, niobium, NASA-Hough carbon, and Tyco sapphire. The diffusion-barrier coatings were aluminum oxide, yttrium oxide, titanium carbide, tungsten carbide with 14% cobalt addition, and zirconium carbide. The metal matrix materials were IN 600 nickel and Ti 6/4 titanium. Adhesion of the coatings to all substrates was good except for the NASA-Hough carbon, where flaking off of the oxide coatings in particular was observed.

  11. Surface scanning inspection system particle detection dependence on aluminum film morphology

    NASA Astrophysics Data System (ADS)

    Prater, Walter; Tran, Natalie; McGarvey, Steve

    2012-03-01

    Physical vapor deposition (PVD) aluminum films present unique challenges when detecting particulate defects with a Surface Scanning Inspection System (SSIS). Aluminum (Al) films 4500Å thick were deposited on 300mm particle grade bare Si wafers at two temperatures using a Novellus Systems INOVA® NExT,.. Film surface roughness and morphology measurements were performed using a Veeco Vx310® atomic force microscope (AFM). AFM characterization found the high deposition temperature (TD) Al roughness (Root Mean Square 16.5 nm) to be five-times rougher than the low-TD Al roughness (rms 3.7 nm). High-TD Al had grooves at the grain boundaries that were measured to be 20 to 80 nm deep. Scanning electron microscopy (SEM) examination, with a Hitachi RS6000 defect review SEM, confirmed the presence of pronounced grain grooves. SEM images established that the low-TD filmed wafers have fine grains (0.1 to 0.3 um diameter) and the high-TD film wafers have fifty-times larger equiaxed plateletshape grains (5 to 15 um diameter). Calibrated Poly-Styrene Latex (PSL) spheres ranging in size from 90 nm to 1 μm were deposited in circular patterns on the wafers using an aerosol deposition chamber. PSL sphere depositions at each spot were controlled to yield 2000 to 5000 counts. A Hitachi LS9100® dark field full wafer SSIS was used to experimentally determine the relationship of the PSL sphere scattered light intensity with S-polarized light, a measure of scattering cross-section, with respect to the calibrated PSL sphere diameter. Comparison of the SSIS scattered light versus PSL spot size calibration curves shows two distinct differences. Scattering cross-section (intensity) of the PSL spheres increased on the low-TD Al film with smooth surface roughness and the low-TD Al film defect detection sensitivity was 126 nm compared to 200 nm for the rougher high- TD Al film. This can be explained by the higher signal to noise attributed to the smooth low-TD Al. Dark field defect detection on

  12. Nontraditional Amorphous Oxide Semiconductor Thin-Film Transistor Fabrication

    NASA Astrophysics Data System (ADS)

    Sundholm, Eric Steven

    Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued. The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer in an AOS bottom-gate TFT is accomplished by (i) choosing a passivation layer in which the charge neutrality level is aligned with (ideal case) or higher in energy than that of the semiconductor channel layer charge neutrality level, and (ii) depositing the passivation layer in such a manner that a negligible density of oxygen vacancies are present at the channel-passivation layer interface. Two AOS TFT passivation schemes are explored. Sputter-deposited zinc tin silicon oxide (ZTSO) appears promising for suppressing the effects of negative bias illumination stress (NBIS) with respect to ZTO and IGZO TFTs. Solution-deposited silicon dioxide is used as a barrier layer to subsequent PECVD silicon dioxide deposition, yielding ZTO TFT transfer curves showing that the dual-layer passivation process does not significantly alter ZTO TFT electrical characteristics. The second focus involves creating an adaptable back-end process compatible with flexible substrates. A detailed list of possible via formation techniques is presented with particular focus on non-traditional and adaptable techniques. Two of the discussed methods, “hydrophobic surface treatment”and “printed local insulator,” are demonstrated and proven effective. The third focus is printing AOS TFT channel layers in order to create an adaptable and additive front-end integrated circuit fabrication scheme. Printed zinc indium aluminum oxide (ZIAO) and indium gallium zinc oxide (IGZO) channel layers are demonstrated using a SonoPlot piezoelectric printing system. Finally, challenges associated with printing electronic

  13. Crystal structure of complex natural aluminum magnesium calcium iron oxide

    SciTech Connect

    Rastsvetaeva, R. K. Aksenov, S. M.; Verin, I. A.

    2010-07-15

    The structure of a new natural oxide found near the Tashelga River (Eastern Siberia) was studied by X-ray diffraction. The pseudo-orthorhombic unit cell parameters are a = 5.6973(1) A, b = 17.1823(4) A, c = 23.5718(5) A, {beta} = 90{sup o}, sp. gr. Pc. The structure was refined to R = 0.0516 based on 4773 reflections with vertical bar F vertical bar > 7{sigma}(F) taking into account the twin plane perpendicular to the z axis (the twin components are 0.47 and 0.53). The crystal-chemical formula (Z = 4) is Ca{sub 2}Mg{sub 2}{sup IV}Fe{sub 2}{sup (2+)IV}[Al{sub 14}{sup VI}O{sub 31}(OH)][Al{sub 2}{sup IV}O][Al{sup IV}]AL{sup IV}(OH)], where the Roman numerals designate the coordination of the atoms. The structure of the mineral is based on wide ribbons of edge-sharing Al octahedra (an integral part of the spinel layer). The ribbons run along the shortest x axis and are inclined to the y and z axes. The adjacent ribbons are shifted with respect to each other along the y axis, resulting in the formation of step-like layers in which the two-ribbon thickness alternates with the three-ribbon thickness. Additional Al octahedra and Mg and Fe{sup 2+} tetrahedra are located between the ribbons. The layers are linked together to form a three-dimensional framework by Al tetrahedra, Ca polyhedra, and hydrogen bonds with the participation of OH groups.

  14. Al K-edge extended fine structures in X-ray emission spectra of aluminum metal and aluminum oxide measured by an electron probe microanalyzer (EPMA)

    NASA Astrophysics Data System (ADS)

    Tanuma, S.; Nishio, M.

    1998-03-01

    The radiative Auger satellite peaks of Al Kα for aluminum metal and aluminum oxide were measured over a small area using an electron probe microanalyzer (EPMA). The oscillation was found to be similar to the extended X-ray absorption fine structure (EXAFS) in the EPMA spectra, oscillation which was recently discovered by Hayashi et al. (1997) in the X-ray fluorescence (XRF) spectra. The measured EXAFS spectra with EPMA are in good agreement with those by Hayashi et al., but here the oscillation structure could be obtained in a few minutes over a small area by using EPMA.

  15. High-temperature oxidation behavior of two-phase iron-manganese-aluminum alloys

    SciTech Connect

    Liu, S.Y.; Lee, C.L.; Kao, C.H.; Perng, T.P.

    2000-04-01

    Oxidation behavior of two series of two-phase Fe-Mn-Al alloys in air up to 800 C was investigated. For the first series of alloys with various ratios of ferrite-austenite, the oxidation resistance of these alloys increased as the ferrite content increased. Two layers of oxide were formed mainly on the austenite grains, and oxidation in the ferrite phase was much less severe. The other layer of the scale on austenite was enriched with Mn and Fe, while Al was concentrated in the inner layer. For the second series of alloys with nearly the same contents of ferrite and C but various contents of Cr, the addition of Cr changed the oxidation characteristics and increased the oxidation resistance. Cr assisted the formation of a dense film of alumina (Al{sub 2}O{sub 3}) to prevent further oxidation.

  16. Films based on oxidized starch and cellulose from barley.

    PubMed

    El Halal, Shanise Lisie Mello; Colussi, Rosana; Deon, Vinícius Gonçalves; Pinto, Vânia Zanella; Villanova, Franciene Almeida; Carreño, Neftali Lenin Villarreal; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2015-11-20

    Starch and cellulose fibers were isolated from grains and the husk from barley, respectively. Biodegradable films of native starch or oxidized starches and glycerol with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. Cellulose fibers isolated from the barley husk were obtained with 75% purity and high crystallinity. The morphology of the films of the oxidized starches, regardless of the fiber addition, was more homogeneous as compared to the film of the native starch. The addition of cellulose fibers in the films increased the tensile strength and decreased elongation. The water vapor permeability of the film of oxidized starch with 20% of cellulose fibers was lower than the without fibers. However the films with cellulose fibers had the highest decomposition with the initial temperature and thermal stability. The oxidized starch and cellulose fibers from barley have a good potential for use in packaging. The addition of cellulose fibers in starch films can contribute to the development of films more resistant that can be applied in food systems to maintain its integrity. PMID:26344323

  17. Non-isothermal oxidation of aluminum nanopowder coated by hydrocarbons and fluorohydrocarbons

    NASA Astrophysics Data System (ADS)

    Sossi, A.; Duranti, E.; Paravan, C.; DeLuca, L. T.; Vorozhtsov, A. B.; Gromov, A. A.; Pautova, Yu. I.; Lerner, M. I.; Rodkevich, N. G.

    2013-04-01

    Aluminum nanopowder (nAl) obtained by electrical explosion of wires and passivated/coated with hydrocarbons and fluorohydrocarbons is comprehensively characterized. Coatings of different natures (octadecanoic and hexadecanoic acid, (1,1,11) trihydroperfluoro-undecan-1-ol, Fluorel™ + ester from esterification of (1,1,11) trihydroperfluoro-undecan-1-ol with furan-2,5-dione) were applied on the particle surface. The powders were studied by TEM, SEM, DSC-TGA, and BET specific surface area. The active aluminum content was determined by volumetric analyses. Coated nAl particles were compared to non-coated powder by the corresponding reactivity parameters obtained from DSC-TGA. It was found that while fatty acids have a weak effect on the non-isothermal oxidation behavior, fluoroelastomers shift the oxidation onset of nAl to higher temperatures by ˜20 °C for the first oxidation stage and by ˜100 °C for the second oxidation stage.

  18. Characterization and stability of thin oxide films on plutonium surfaces

    NASA Astrophysics Data System (ADS)

    Flores, H. G. García; Roussel, P.; Moore, D. P.; Pugmire, D. L.

    2011-02-01

    X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were employed to study oxide films on plutonium metal surfaces. Measurements of the relative concentrations of oxygen and plutonium, as well as the resulting oxidation states of the plutonium (Pu) species in the near-surface region are presented. The oxide product of the auto-reduction (AR) of plutonium dioxide films is evaluated and found to be an oxide species which is reduced further than what is expected. The results of this study show a much greater than anticipated extent of auto-reduction and challenge the commonly held notion of the stoichiometric stability of Pu 2O 3 thin-films. The data indicates that a sub-stoichiometric plutonium oxide (Pu 2O 3 - y ) exists at the metal-oxide interface. The level of sub-stoichiometry is shown to depend, in part, on the carbidic contamination of the metal surface.

  19. Iron-aluminum cluster catalysts obtained by alkoxy synthesis. 1. Liquid-phase oxidation of hexadecane

    SciTech Connect

    Tsodikov, M.V.; Kugel, V.Ya.; Bukhtenko, O.V. ); Maksimov, Yu.V. ); Ellert, O.G.; Shcherbakov, V.M. )

    1994-07-01

    Much attention has previously been devoted to simple metal oxides as catalysts for low-temperature liquid-phase oxidation of hydrocarbons. Iron-substituted boehmite gel has been prepared by alkoxy synthesis, i.e., by reaction of Fe(acac)[sub 3] with a fresh surface of AlOOH. Iron-aluminum complex oxide catalysts for liquid-phase oxidation of hexadecane were prepared by annealing the gel precursors. The gels with 0-20 wt.% of iron loading were studied by magnetic susceptibility and Moessbauer spectroscopy. Depending on the iron concentration, differing amounts of paramagnetic Fe[sup 3+] ions in the boehmite structure and small ferrimagnetic spinel clusters were observed in the X-ray amorphous precursors. Thermal treatment led to formation of substituted spinels, Fe[sub x]Al[sub 2-x]O[sub 3], as well as [gamma]-ferric oxide clusters. The overall rate of hexadecane oxidation increased with an increase in the relative content of magnetic clusters. The inclusion of nonmagnetic Al[sup 3+] ions in the [gamma]-Fe[sub 2]O[sub 3] lattice reduced the number of terminal Fe[sup 3+]=O groups and the overall catalytic activity. The role of electronically excited terminal oxygen on the surface of [gamma]-ferric oxide clusters in the mechanism of hexadecane oxidation is discussed. 19 refs., 10 figs., 1 tab.

  20. Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

    SciTech Connect

    Akiyama, Morito; Kano, Kazuhiko; Teshigahara, Akihiko

    2009-10-19

    The authors have investigated the influence of growth temperature and scandium concentration on the piezoelectric response of scandium aluminum nitride (Sc{sub x}Al{sub 1-x}N) films prepared by dual reactive cosputtering. The piezoelectric response strongly depends on the growth temperature and scandium concentration. The piezoelectric response of the films prepared at 400 deg. C gradually increases with increasing scandium concentration. On the other hand, the piezoelectric response of the films prepared at 580 deg. C drastically decreases and increases in the scandium concentration from 30% to 40%. We think that the drastic change of the piezoelectric response is due to the disordered grain growth.

  1. The Cryogenic Properties of Several Aluminum-Beryllium Alloys and a Beryllium Oxide Material

    NASA Technical Reports Server (NTRS)

    Gamwell, Wayne R.; McGill, Preston B.

    2003-01-01

    Performance related mechanical properties for two aluminum-beryllium (Al-Be) alloys and one beryllium-oxide (BeO) material were developed at cryogenic temperatures. Basic mechanical properties (Le., ultimate tensile strength, yield strength, percent elongation, and elastic modulus were obtained for the aluminum-beryllium alloy, AlBeMetl62 at cryogenic [-195.5"C (-320 F) and -252.8"C (-423"F)I temperatures. Basic mechanical properties for the Be0 material were obtained at cyrogenic [- 252.8"C (-423"F)] temperatures. Fracture properties were obtained for the investment cast alloy Beralcast 363 at cryogenic [-252.8"C (-423"F)] temperatures. The AlBeMetl62 material was extruded, the Be0 material was hot isostatic pressing (HIP) consolidated, and the Beralcast 363 material was investment cast.

  2. Method of making highly porous, stable aluminum oxides doped with silicon

    DOEpatents

    Khosravi-Mardkhe, Maryam; Woodfield, Brian F.; Bartholomew, Calvin H.; Huang, Baiyu

    2016-03-22

    The present invention relates to a method for making high surface area and large pore volume thermally stable silica-doped alumina (aluminum oxide) catalyst support and ceramic materials. The ability of the silica-alumina to withstand high temperatures in presence or absence of water and prevent sintering allows it to maintain good activity over a long period of time in catalytic reactions. The method of preparing such materials includes adding organic silicon reagents to an organic aluminum salt such as an alkoxide in a controlled quantity as a doping agent in a solid state, solvent deficient reaction followed by calcination. Alternatively, the organic silicon compound may be added after calcination of the alumina, followed by another calcination step. This method is inexpensive and simple. The alumina catalyst support material prepared by the subject method maintains high pore volumes, pore diameters and surface areas at very high temperatures and in the presence of steam.

  3. Dielectric characterization of semiconducting ZnPc films sandwiched between Gold or Aluminum electrodes

    NASA Astrophysics Data System (ADS)

    Kitaneh, R. M.-L.; Abu-Samreh, M. M.; Musameh, S. M.; Hraibat, S. M.; Saleh, A. M.

    2014-03-01

    The dependencies of complex dielectric functions (the dielectric constant, ɛ 1, and the dielectric loss, ɛ 2), on frequency and temperature of zinc phthalocyanine (ZnPc) thin films sandwiched between either gold or aluminum Ohmic-electrode contacts have been investigated in the temperature range of 93-470 K and frequency range 0.1-20 kHz. It is found that both values of ɛ 1 and ɛ 2 decrease with increasing frequency and increase with decreasing temperature. The rate of change depends greatly on the temperature and frequency ranges under consideration. Around room temperature, neither ɛ 1 nor ɛ 2 show any appreciable change through the whole range of frequencies. Thus, the dielectric dispersion is found to include of both dipolar and interfacial polarizations. The dependencies of both dielectric functions on frequency at different temperatures were found to follow a universal power law of the form ω n , where the index 0< n≤-1. This indicates that the correlated barrier hopping (CBH) model is a suitable mechanism to describe the dielectric behavior in ZnPc films. Furthermore, the results of the dielectric response indicate that polarization in these films could be in the form of non-Debye polarization. However, the Debye polarization can be traced below room temperature. The obtained results of the relaxation-time, τ, dependency on temperature have shown that a thermally-activated process may be dominated in ZnPc thin films conduction at high temperatures. Partial phase transition (from α- to β-phase) has been observed around 400 K in molecular relaxation-time, τ, and optical dielectric constant, ɛ ∞. Arrhenius behavior has been observed for all the dielectric loss and conductivity relaxation-times above room temperature and their activation energies are explained and reported. The optical dielectric constant ɛ ∞ was found to increase with temperature.

  4. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  5. Assessing the fate and effects of nano aluminum oxide in the terrestrial earthworm, Eisenia fetida.

    PubMed

    Coleman, Jessica G; Johnson, David R; Stanley, Jacob K; Bednar, Anthony J; Weiss, Charles A; Boyd, Robert E; Steevens, Jeffery A

    2010-07-01

    Nano-sized aluminum is currently being used by the military and commercial industries in many applications including coatings, thermites, and propellants. Due to the potential for wide dispersal in soil systems, we chose to investigate the fate and effects of nano-sized aluminum oxide (Al2O3), the oxidized form of nano aluminum, in a terrestrial organism. The toxicity and bioaccumulation potential of micron-sized (50-200 microm, nominal) and nano-sized (11 nm, nominal) Al2O3 was comparatively assessed through acute and subchronic bioassays using the terrestrial earthworm, Eisenia fetida. Subchronic (28-d) studies were performed exposing E. fetida to nano- and micron-sized Al2O3-spiked soils to assess the effects of long-term exposure. No mortality occurred in subchronic exposures, although reproduction decreased at >or=3,000 mg/kg nano-sized Al2O3 treatments, with higher aluminum body burdens observed at 100 and 300 mg/kg; no reproductive effects were observed in the micron-sized Al2O3 treatments. In addition to toxicity and bioaccumulation bioassays, an acute (48-h) behavioral bioassay was conducted utilizing a soil avoidance wheel in which E. fetida were given a choice of habitat between control, nano-, or micron-sized Al2O3 amended soils. In the soil avoidance bioassays, E. fetida exhibited avoidance behavior toward the highest concentrations of micron- and nano-sized Al2O3 (>5,000 mg/kg) relative to control soils. Results of the present study indicate that nano-sized Al2O3 may impact reproduction and behavior of E. fetida, although at high levels unlikely to be found in the environment. PMID:20821608

  6. Aluminum overload increases oxidative stress in four functional brain areas of neonatal rats

    PubMed Central

    2012-01-01

    Background Higher aluminum (Al) content in infant formula and its effects on neonatal brain development are a cause for concern. This study aimed to evaluate the distribution and concentration of Al in neonatal rat brain following Al treatment, and oxidative stress in brain tissues induced by Al overload. Methods Postnatal day 3 (PND 3) rat pups (n =46) received intraperitoneal injection of aluminum chloride (AlCl3), at dosages of 0, 7, and 35 mg/kg body wt (control, low Al (LA), and high Al (HA), respectively), over 14 d. Results Aluminum concentrations were significantly higher in the hippocampus (751.0 ± 225.8 ng/g v.s. 294.9 ± 180.8 ng/g; p < 0.05), diencephalon (79.6 ± 20.7 ng/g v.s. 20.4 ± 9.6 ng/g; p < 0.05), and cerebellum (144.8 ± 36.2 ng/g v.s. 83.1 ± 15.2 ng/g; p < 0.05) in the HA group compared to the control. The hippocampus, diencephalon, cerebellum, and brain stem of HA animals displayed significantly higher levels of lipid peroxidative products (TBARS) than the same regions in the controls. However, the average superoxide dismutase (SOD) activities in the cerebral cortex, hippocampus, cerebellum, and brain stem were lower in the HA group compared to the control. The HA animals demonstrated increased catalase activity in the diencephalon, and increased glutathione peroxidase (GPx) activity in the cerebral cortex, hippocampus, cerebellum, and brain stem, compared to controls. Conclusion Aluminum overload increases oxidative stress (H2O2) in the hippocampus, diencephalon, cerebellum, and brain stem in neonatal rats. PMID:22613782

  7. Low reflectance sputtered vanadium oxide thin films on silicon

    NASA Astrophysics Data System (ADS)

    Esther, A. Carmel Mary; Dey, Arjun; Rangappa, Dinesh; Sharma, Anand Kumar

    2016-07-01

    Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100-700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200-2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated.

  8. Preparation of Nickel-Aluminum-Containing Layered Double Hydroxide Films by Secondary (Seeded) Growth Method and Their Electrochemical Properties.

    PubMed

    Zhang, Fazhi; Guo, Li; Xu, Sailong; Zhang, Rong

    2015-06-23

    Thin films of nickel-aluminum-containing layered double hydroxide (NiAl-LDH) have been prepared on nickel foil and nickel foam substrates by secondary (seeded) growth of NiAl-LDH seed layer. The preparation procedure consists of deposition of LDH seeds from a colloidal suspension on the substrate by dip coating, followed by hydrothermal treatment of the nanocrystals to form the LDH film. The secondary grown film is found to provide a higher crystallinity and more uniform composition of metal cations in the film layer than the in situ grown film on seed-free substrate under identical hydrothermal conditions. A systematic investigation of the film evolution process reveals that the crystallite growth rate is relatively fast for the secondary grown film because of the presence of LDH nanocrystal seeds. Electrochemical performance of the resulting NiAl-LDH films as positive electrode material was further assessed as an example of their practical applications. The secondary grown film electrode delivers improved recharge-discharge capacity and cycling stability compared with that of the in situ grown film, which can be explained by the existence of a unique microstructure of the former. Our findings show an example for the effective fabrication of LDH film with controllable microstructure and enhanced application performance through a secondary (seeded) growth procedure. PMID:26033419

  9. Method for producing high quality oxide films on substrates

    DOEpatents

    Ruckman, M.W.; Strongin, M.; Gao, Y.L.

    1993-11-23

    A method is described for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material. 4 figures.

  10. Method for producing high quality oxide films on substrates

    DOEpatents

    Ruckman, Mark W.; Strongin, Myron; Gao, Yong L.

    1993-01-01

    A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

  11. Formation of aluminum films on silicon by ion beam deposition: A comparison with ionized cluster beam deposition

    SciTech Connect

    Zuhr, R.A.; Haynes, T.E.; Galloway, M.D. ); Tanaka, S.; Yamada, A.; Yamada, I. . Ion Beam Engineering Lab.)

    1990-01-01

    The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically-analyzed ion beam to low energies (10--200 eV) for direct deposition onto the substrate under UHV conditions. The energy of the incident ions can be selected to provide the desired growth conditions, and the mass analysis ensures good beam purity. The aluminum on silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. In this work, we have studied the formation of such films by IBD with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40{degree} to 300{degree}C and with ion energies from 30 to 120 eV per ion. Completed films were analyzed by ion scattering, x-ray diffraction, scanning electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are compared with results for similar films grown by ICB deposition. 15 refs., 3 figs.

  12. Determining the Effect of Aluminum Oxide Nanoparticles on the Aggregation of Amyloid-Beta in Transgenic Caenorhabditis elegans

    NASA Astrophysics Data System (ADS)

    Patel, Suhag; Matticks, John; Howell, Carina

    2014-03-01

    The cause of Alzheimer's disease has been linked partially to genetic factors but the predicted environmental components have yet to be determined. In Alzheimer's, accumulation of amyloid-beta protein in the brain forms plaques resulting in neurodegeneration and loss of mental functions. It has been postulated that aluminum influences the aggregation of amyloid-beta. To test this hypothesis, transgenic Caenorhabditis elegans, CL2120, was used as a model organism to observe neurodegeneration in nematodes exposed to aluminum oxide nanoparticles. Behavioral testing, fluorescent staining, and fluorescence microscopy were used to test the effects of aggregation of amyloid-beta in the nervous systems of effected nematodes exposed to aluminum oxide nanoparticles. Energy-dispersive x-ray spectroscopy was used to quantify the total concentration of aluminum oxide that the worms were exposed to during the experiment. Exposure of transgenic and wild type worms to a concentration of 4 mg mL-1 aluminum oxide showed a decrease in the sinusoidal motion, as well as an infirmity of transgenic worms when compared to control worms. These results support the hypothesis that aluminum may play a role in neurodegeneration in C. elegans, and may influence and increase the progression of Alzheimer's disease. This work was supported by National Science Foundation grants DUE-1058829, DMR-0923047 DUE-0806660 and Lock Haven FPDC grants.

  13. Altering properties of cerium oxide thin films by Rh doping

    SciTech Connect

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír; and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  14. Nanoporous anodic aluminum oxide with a long-range order and tunable cell sizes by phosphoric acid anodization on pre-patterned substrates

    PubMed Central

    Surawathanawises, Krissada; Cheng, Xuanhong

    2014-01-01

    Nanoporous anodic aluminum oxide (AAO) has been explored for various applications due to its regular cell arrangement and relatively easy fabrication processes. However, conventional two-step anodization based on self-organization only allows the fabrication of a few discrete cell sizes and formation of small domains of hexagonally packed pores. Recent efforts to pre-pattern aluminum followed with anodization significantly improve the regularity and available pore geometries in AAO, while systematic study of the anodization condition, especially the impact of acid composition on pore formation guided by nanoindentation is still lacking. In this work, we pre-patterned aluminium thin films using ordered monolayers of silica beads and formed porous AAO in a single-step anodization in phosphoric acid. Controllable cell sizes ranging from 280 nm to 760 nm were obtained, matching the diameters of the silica nanobead molds used. This range of cell size is significantly greater than what has been reported for AAO formed in phosphoric acid in the literature. In addition, the relationships between the acid concentration, cell size, pore size, anodization voltage and film growth rate were studied quantitatively. The results are consistent with the theory of oxide formation through an electrochemical reaction. Not only does this study provide useful operational conditions of nanoindentation induced anodization in phosphoric acid, it also generates significant information for fundamental understanding of AAO formation. PMID:24535886

  15. The oxidation of aluminum at high temperature studied by Thermogravimetric Analysis and Differential Scanning Calorimetry.

    SciTech Connect

    Coker, Eric Nicholas

    2013-10-01

    The oxidation in air of high-purity Al foil was studied as a function of temperature using Thermogravimetric Analysis with Differential Scanning Calorimetry (TGA/DSC). The rate and/or extent of oxidation was found to be a non-linear function of the temperature. Between 650 and 750 %C2%B0C very little oxidation took place; at 850 %C2%B0C oxidation occurred after an induction period, while at 950 %C2%B0C oxidation occurred without an induction period. At oxidation temperatures between 1050 and 1150 %C2%B0C rapid passivation of the surface of the aluminum foil occurred, while at 1250 %C2%B0C and above, an initial rapid mass increase was observed, followed by a more gradual increase in mass. The initial rapid increase was accompanied by a significant exotherm. Cross-sections of oxidized specimens were characterized by scanning electron microscopy (SEM); the observed alumina skin thicknesses correlated qualitatively with the observed mass increases.

  16. Evaluation of Residual Stress Development at the Interface of Plasma Electrolytically Oxidized and Cold-Worked Aluminum

    NASA Astrophysics Data System (ADS)

    Asquith, David; Yerokhin, Aleksey; James, Neil; Yates, John; Matthews, Allan

    2013-10-01

    Fatigue failure in hard oxide-coated aluminum is usually driven by rapid short crack propagation from the interface through the substrate; mitigation of this is possible by introducing interfacial compressive stresses. Combining cold work with hard oxide coating can improve their performance under conditions of simultaneous wear, corrosion, and fatigue. Three-dimensional strain fields in an aluminum alloy with combined cold work and PEO coating have been measured and mechanisms for stress redistribution presented. These comprise material consumption, expansive growth of oxide layers, and local annealing.

  17. A thin-film aluminum strain gauges array in a flexible gastrointestinal catheter for pressure measurements

    NASA Astrophysics Data System (ADS)

    Sousa, P. J.; Silva, L. R.; Pinto, V. C.; Goncalves, L. M.; Minas, G.

    2016-08-01

    This paper presents an innovative approach to measure the pressure patterns associated with the motility and peristaltic movements in the upper gastrointestinal tract. This approach is based on inexpensive and easy to fabricate thin-film aluminum strain gauge pressure sensors using a flexible polyimide film (Kapton) as substrate and SU-8 structural support. These sensors are fabricated using well-established and standard photolithographic and wet etching techniques. Each sensor has a 3.4 mm2 area, allowing a fabrication process with a high level of sensors integration (four sensors in 1.7 cm), which is suitable for placing them in a single catheter. These strain gauges bend when pressure is applied and, consequently, their electrical resistance is changed. The fabricated sensors feature an almost linear response (R 2  =  0.9945) and an overall sensitivity of 6.4 mV mmHg‑1. Their readout and control electronics were developed in a flexible Kapton ribbon cable and, together with the sensors, bonded and wrapped around a catheter-like structure. The sequential acquisition of the different signals is carried by a microcontroller with a 10 bit ADC at a sample rate of 250 Hz per‑1 sensor. The signals are presented in a user friendly interface developed using the integrated development environment software, QtCreator IDE, for better visualization by physicians.

  18. Growth of alumina/metal composites into porous ceramics by the oxidation of aluminum

    SciTech Connect

    Watari, Takanori; Mori, Koichiro; Torikai, Toshio; Matsuda, Ohsaku . Dept. of Applied Chemistry)

    1994-10-01

    Ductile metal is incorporated into brittle ceramics to improve their fracture toughness. Of the many methods for fabricating ceramic/metal composites, the oxidation of a molten alloy (DIMOX process) is particularly interesting because it affords (1) ease of composite production, (2) low cost, and (3) near-net-shape capability. Alumina/metal composites were grown into the pores of porous alumina, porous aluminosilicate, and porous silicon carbide substrates through the oxidation of Al-Si (5 wt %) powder compacts coated with magnesia powder (11 mg/cm[sup 2]). The thickness of the resulting composite increased with oxidation time and temperature, and was proportional to (pore size)[sup 0.5] on using porous alumina. The composite thickness was more than 2 times larger in the silicon carbide and about 4 times larger in the aluminosilicate than in the alumina at 1,523 K for 1 h. The products using these three types of substrates consisted of alumina, aluminum, and silicon, except that a silicon carbide phase occurred when using the silicon carbide substrate. Silica and mullite in the aluminosilicate substrate changed to silicon and alumina, and silica in the silicon carbide substrate changed to silicon because of the reduction by aluminum.

  19. Microleakage on Class V glass ionomer restorations after cavity preparation with aluminum oxide air abrasion.

    PubMed

    Corona, Silmara Aparecida Milori; Borsatto, Maria Cristina; Rocha, Renata Andréa Salvitti de Sá; Palma-Dibb, Regina Guenka

    2005-01-01

    This in vitro study assessed the marginal microleakage on class V cavities prepared with aluminum oxide air abrasion and restored with different glass ionomer cements. The cavities were prepared on the buccal and lingual surfaces of 15 sound third molars with an air- abrasion device (Kreativ Mach 4.1; New Image) using a 27.5-microm aluminum oxide particle stream, and were assigned to 3 groups of 10 cavities each. The restorative materials were: group I, a conventional glass ionomer cement (Ketac-Fil); groups II and III, resin-modified glass ionomer cements (Vitremer R and Fuji II LC, respectively). After placement of the restorations, the teeth were stored in distilled water at 37 degrees C for 24 h, polished and then submitted to a thermocycling regimen of 500 cycles, isolated, immersed in 0.2% Rhodamine B solution for 24 h, included and serially sectioned. Microleakage was assessed by viewing the specimens under an optical microscope connected to a color video camera and a computer. The images obtained were digitized and analyzed for microleakage using software that allows for a standard quantitative assessment of dye penetration in millimeters. Statistical analysis was done using the Kruskall-Wallis and Wilcoxon tests. Means of dye penetration (%) were: occlusal - I: 25.76 +/- 34.35, II: 20.00 +/- 42.16, III: 28.25 +/- 41.67; cervical - I: 23.72 +/- 41.84; II: 44.22 +/- 49.69, III: 39.27 +/- 50.74. No statistically significant differences (p>0.05) were observed among either the glass ionomer cements or the margins. In conclusion, class V cavities restored with either conventional or resin-modified glass ionomer cements after preparation with aluminum oxide air abrasion did not show complete sealing at the enamel and dentin/cementum margins. PMID:16113931

  20. Unidirectional oxide hetero-interface thin-film diode

    NASA Astrophysics Data System (ADS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-10-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ˜105 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 102 Hz < f < 106 Hz, providing a high feasibility for practical applications.

  1. Unidirectional oxide hetero-interface thin-film diode

    SciTech Connect

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  2. Morphological instability leading to formation of porous anodic oxide films

    NASA Astrophysics Data System (ADS)

    Hebert, Kurt R.; Albu, Sergiu P.; Paramasivam, Indhumati; Schmuki, Patrik

    2012-02-01

    Electrochemical oxidation of metals, in solutions where the oxide is somewhat soluble, produces anodic oxides with highly regular arrangements of pores. Although porous aluminium and titanium oxides have found extensive use in functional nanostructures, pore initiation and self-ordering are not yet understood. Here we present an analysis that examines the roles of oxide dissolution and ionic conduction in the morphological stability of anodic films. We show that patterns of pores with a minimum spacing are possible only within a narrow range of the oxide formation efficiency (the fraction of oxidized metal atoms retained in the film), which should exist when the metal ion charge exceeds two. Experimentally measured efficiencies, over diverse anodizing conditions on both aluminium and titanium, lie within the different ranges predicted for each metal. On the basis of these results, the relationship between dissolution chemistry and the conditions for pore initiation can now be understood in quantitative terms.

  3. Morphological instability leading to formation of porous anodic oxide films.

    PubMed

    Hebert, Kurt R; Albu, Sergiu P; Paramasivam, Indhumati; Schmuki, Patrik

    2012-02-01

    Electrochemical oxidation of metals, in solutions where the oxide is somewhat soluble, produces anodic oxides with highly regular arrangements of pores. Although porous aluminium and titanium oxides have found extensive use in functional nanostructures, pore initiation and self-ordering are not yet understood. Here we present an analysis that examines the roles of oxide dissolution and ionic conduction in the morphological stability of anodic films. We show that patterns of pores with a minimum spacing are possible only within a narrow range of the oxide formation efficiency (the fraction of oxidized metal atoms retained in the film), which should exist when the metal ion charge exceeds two. Experimentally measured efficiencies, over diverse anodizing conditions on both aluminium and titanium, lie within the different ranges predicted for each metal. On the basis of these results, the relationship between dissolution chemistry and the conditions for pore initiation can now be understood in quantitative terms. PMID:22138790

  4. Growth of porous anodized alumina on the sputtered aluminum films with 2D-3D morphology for high specific surface area

    NASA Astrophysics Data System (ADS)

    Liao, M. W.; Chung, C. K.

    2014-08-01

    The porous anodic aluminum oxide (AAO) with high-aspect-ratio pore channels is widely used as a template for fabricating nanowires or other one-dimensional (1D) nanostructures. The high specific surface area of AAO can also be applied to the super capacitor and the supporting substrate for catalysis. The rough surface could be helpful to enhance specific surface area but it generally results in electrical field concentration even to ruin AAO. In this article, the aluminum (Al) films with the varied 2D-3D morphology on Si substrates were prepared using magnetron sputtering at a power of 50 W-185 W for 1 h at a working pressure of 2.5 × 10-1 Pa. Then, AAO was fabricated from the different Al films by means of one-step hybrid pulse anodizing (HPA) between the positive 40 V and the negative -2 V (1 s:1 s) for 3 min in 0.3 M oxalic acid at a room temperature. The microstructure and morphology of Al films were characterized by X-ray diffraction, scanning electron microscope and atomic force microscope, respectively. Some hillocks formed at the high target power could be attributed to the grain texture growth in the normal orientation of Al(1 1 1). The 3D porous AAO structure which is different from the conventional 2D planar one has been successfully demonstrated using HPA on the film with greatly rough hillock-surface formed at the highest power of 185 W. It offers a potential application of the new 3D AAO to high specific surface area devices.

  5. Defects and characteristics of the structure and properties of aluminum oxides

    NASA Astrophysics Data System (ADS)

    Kopylov, V. B.; Aleksandrov, K. A.; Sergeev, E. V.

    2008-07-01

    Based on IR spectroscopy data, it was established that nonstoichiometry defects in the structure of aluminum oxides were components of the Wannier-Mott exciton states and included the Al-O, Al-Al, O2, O{2/+}, O{2/-}, O{2/2-}, O3, and O2 n isolated oscillators in the ground and electronically excited states. It was shown that their presence manifested itself by thermoemission of molecular oxygen singlet forms, excess heat capacity, and anomalous diamagnetism at elevated temperatures.

  6. CRYSTALLINE CHROMIUM DOPED ALUMINUM OXIDE (RUBY) USE AS A LUMINESCENT SCREEN FOR PROTON BEAMS.

    SciTech Connect

    BROWN,K.A.; GASSNER,D.M.

    1999-03-29

    In our search for a better luminescent screen material, we tested pieces of mono-crystalline chromium doped aluminum oxide (more commonly known as a ruby) using a 24 GeV proton beam. Due to the large variations in beam intensity and species which are run at the Alternating Gradient Synchrotron (AGS), we hope to find a material which can sufficiently luminesce, is compatible in vacuum, and maintain its performance level over extended use. Results from frame grabbed video camera images using a variety of neutral density filters are presented.

  7. Aptamer-modified anodized aluminum oxide-based capacitive sensor for the detection of bisphenol A

    NASA Astrophysics Data System (ADS)

    Kang, Bongkeun; Kim, Joo Hyoung; Kim, Soyoun; Yoo, Kyung-Hwa

    2011-02-01

    We describe a rapid, sensitive, and low-cost method to detect bisphenol A (BPA) using an anodized aluminum oxide-based capacitive sensor. BPA is detected by measuring the change in capacitance caused by the biospecific binding of BPA with a BPA aptamer that is immobilized on the electrode surface. For a solution containing 100 pM BPA, the capacitance decreased by approximately 3%. In addition, we fabricated a capacitive sensor array and demonstrated that BPA in environmental samples can be measured using our capacitive sensor.

  8. Oxidation behavior in reaction-bonded aluminum-silicon alloy/alumina powder compacts

    SciTech Connect

    Yokota, S.H.

    1992-12-01

    Goal of this research is to determine the feasibility of producing low-shrinkage mullite/alumina composites by applying the reaction-bonded alumina (RBAO) process to an aluminum-silicon alloy/alumina system. Mirostructural and compositional changes during heat treatment were studied by removing samples from the furnace at different steps in the heating schedule and then using optical and scanning electron microscopy, EDS and XRD to characterize the powder compacts. Results suggest that the oxidation behavior of the alloy compact is different from the model proposed for the pure Al/alumina system.

  9. Factors Leading to the Formation of a Resistive Thin Film at the Bottom of Aluminum Electrolysis Cells

    NASA Astrophysics Data System (ADS)

    Coulombe, Marc-André; Soucy, Gervais; Rivoaland, Loig; Davies, Lynne

    2016-04-01

    Studies on sludge formation in aluminum electrolysis cells are rare and typically do not distinguish the deposits at the center of the cell from those composing the ledge toe because low voltage lost is expected at the center of the cell. However, high amount of sludge in the center leads to the formation of a thin film in an intermediate zone between the ledge toe and this center thick sludge accumulation. Looking at sludge deposits through composition mapping and microstructure analysis coming from four aluminum cells of two different aluminum reduction technologies, major factors leading to a thin resistive film were identified. This includes the formation of a suspension on the top of the thick deposit at the center of the cell, its displacement through magnetohydrodynamic induced movement by the metal pad, and the growth and thickening of a carbide sublayer making the thin film even more resistive. Correlation between thickening of the thin film and cathode voltage drop increase was observed. The postmortem analysis performed on six laboratory experiments was found useful to support different observations made on the industrial cells at lower cost.

  10. Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures

    SciTech Connect

    Lad, Robert J.

    1999-12-14

    This project focused on three different aspects of oxide thin film systems: (1) Model metal/oxide and oxide/oxide interface studies were carried out by depositing ultra-thin metal (Al, K, Mg) and oxide (MgO, AlO{sub x}) films on TiO{sub 2}, NiO and {alpha}-Al{sub 2}O{sub 3} single crystal oxide substrates. (2) Electron cyclotron resonance (ECR) oxygen plasma deposition was used to fabricate AlO{sub 3} and ZrO{sub 2} films on sapphire substrates, and film growth mechanisms and structural characteristics were investigated. (3) The friction and wear characteristics of ZrO{sub 2} films on sapphire substrates in unlubricated sliding contact were studied and correlated with film microstructure. In these studies, thin film and interfacial regions were characterized using diffraction (RHEED, LEED, XRD), electron spectroscopies (XPS, UPS, AES), microscopy (AFM) and tribology instruments (pin-on-disk, friction microprobe, and scratch tester). By precise control of thin film microstructure, an increased understanding of the structural and chemical stability of interface regions and tribological performance of ultra-thin oxide films was achieved in these important ceramic systems.

  11. Effect of environment on iodine oxidation state and reactivity with aluminum.

    PubMed

    Smith, Dylan K; McCollum, Jena; Pantoya, Michelle L

    2016-04-28

    Iodine oxide is a highly reactive solid oxidizer and with its abundant generation of iodine gas during reaction, this oxidizer also shows great potential as a biocidal agent. A problem with using I2O5 in an energetic mixture is its highly variable reactive behavior. This study isolates the variable reactivity associated with I2O5 as a function of its chemical reaction in various environments. Specifically, aluminum fuel and iodine oxide powder are combined using a carrier fluid to aid intermixing. The carrier fluid is shown to significantly affect the oxidation state of iodine oxide, thereby affecting the reactivity of the mixture. Four carrier fluids were investigated ranging in polarity and water miscibility in increasing order from hexane < acetone < isopropanol < water as well as untreated, dry-mixed reactants. Oxidation state and reactivity were examined with experimental techniques including X-ray photoelectric spectroscopy (XPS) and differential scanning calorimetry (DSC). Results are compared with thermal equilibrium simulations. Flame speeds increased with polarity of the fluid used to intermix the powder and ranged from 180 to 1202 m s(-1). The I2O5 processed in the polar fluids formed hydrated states of iodine oxide: HIO3 and HI3O8; and, the nonpolar and dry-mixed samples formed: I2O4 and I4O9. During combustion, the hydrated iodine oxides rapidly dehydrated from HIO3 to HI3O8 and from HI3O8 to I2O5. Both steps release 25% of their mass as vapor during combustion. Increased gas generation enhances convective energy transport and accounts for the increase in reactivity seen in the mixtures processed in polar fluids. These results explain the chemical mechanisms underlying the variable reactivity of I2O5 that are a function of the oxide's highly reactive nature with its surrounding environment. These results will significantly impact the selection of carrier fluid in the synthesis approach for iodine containing reactive mixtures. PMID:27052472

  12. Oxidative removal of bisphenol A using zero valent aluminum-acid system.

    PubMed

    Liu, Wanpeng; Zhang, Honghua; Cao, Beipei; Lin, Kunde; Gan, Jay

    2011-02-01

    Bisphenol A (BPA), a controversial endocrine disruptor, is ubiquitous in the aquatic environment. In this study, the oxidative degradation of BPA and its mechanism using zero valent aluminum (ZVAl)-acid system under air-equilibrated conditions was investigated. Under pH <3.5 acidic conditions, ZVAl demonstrated an excellent capacity to remove BPA. More than 75% of BPA was eliminated within 12 h in pH 1.5 reaction solutions initially containing 4.0 g/L aluminum and 2.0 mg/L BPA at 25 ± 1 °C. The removal of BPA was further accelerated with increasing aluminum loadings. Higher temperature and lower initial pH also facilitated BPA removal. The addition of Fe(2+) into the ZVAl-acid system significantly accelerated the reaction likely due to the enhancing transformation of H(2)O(2) to HO via Fenton reaction. Furthermore, the primary products or intermediates including monohydroxylated BPA, hydroquinone, 2-(4-hydroxyphenyl)propane and 4-isopropenylphenol, were identified and a possible reaction scheme was proposed. The remarkable capacity of the ZVAl-acid system in removing BPA displays its potential application in the treatment of organic compound-contaminated water. PMID:21185583

  13. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    NASA Astrophysics Data System (ADS)

    Yilbas, B. S.; Ali, H.

    2016-08-01

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  14. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  15. Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

    SciTech Connect

    Baldi, G. Bosi, M.; Attolini, G.; Berzina, T.; Mosca, R.; Ponraj, J. S.; Iannotta, S.

    2015-03-10

    We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO{sub 2} thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

  16. Influence of film thickness on laser ablation threshold of transparent conducting oxide thin-films

    NASA Astrophysics Data System (ADS)

    Rung, S.; Christiansen, A.; Hellmann, R.

    2014-06-01

    We report on a comprehensive study of the laser ablation threshold of transparent conductive oxide thin films. The ablation threshold is determined for both indium tin oxide and gallium zinc oxide as a function of film thickness and for different laser wavelengths. By using a pulsed diode pumped solid state laser at 1064 nm, 532 nm, 355 nm and 266 nm, respectively, the relationship between optical absorption length and film thickness is studied. We find that the ablation threshold decreases with increasing film thickness in a regime where the absorption length is larger than the film thickness. In turn, the ablation threshold increases in case the absorption length is smaller than the film thickness. In particular, we observe a minimum of the ablation threshold in a region where the film thickness is comparable to the absorption length. To the best of our knowledge, this behaviour previously predicted for thin metal films, has been unreported for all three regimes in case of transparent conductive oxides, yet. For industrial laser scribing processes, these results imply that the efficiency can be optimized by using a laser where the optical absorption length is close to the film thickness.

  17. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    PubMed

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization. PMID:25363298

  18. Lithium cobalt oxide thin film and its electrochromism

    NASA Astrophysics Data System (ADS)

    Wei, Guang; Haas, Terry E.; Goldner, Ronald B.

    1989-06-01

    Thin films of lithium cobalt oxide have been prepared by RF-sputtering from powdered LiCoO2. These films permit reversible electrolytic removal of lithium ions upon application of an anodic voltage in a propylene carbonate-lithium perchlorate electrolyte, the films changing in color from a pale amber transparent state to a dark brown. A polycrystalline columnar film structure was revealed with SEM and TEM. X ray examination of the films suggests that the layered rhombohedral LiCoO2 structure is the major crystalline phase present. Oxidation-reduction titration and atomic absorption were used for the determination of the film stoichiometry. The results show that the as deposited-films on glass slides are lithium deficient (relative to the starting material) and show a high average cobalt oxidation state near +3.5. The measurements of dc conductivity suggest a band to band conduction at high temperature (300 to 430 K) and hopping conduction in localized states at low temperature (4 to 270 K). The thermoelectric power data show that the films behave as p-type semiconductors. Transmission and reflectance measurements from 400 nm to 2500 nm show significant near-IR reflectivity.

  19. Understanding Organic Film Behavior on Alloy and Metal Oxides

    PubMed Central

    Raman, Aparna; Quiñones, Rosalynn; Barriger, Lisa; Eastman, Rachel; Parsi, Arash

    2010-01-01

    Native oxide surfaces of stainless steel 316L and Nitinol alloys and their constituent metal oxides namely, nickel, chromium, molybdenum, manganese, iron and titanium were modified with long chain organic acids to better understand organic film formation. The adhesion and stability of films of octadecylphosphonic acid, octadecylhydroxamic acid, octadecylcarboxylic acid and octadecylsulfonic acid on these substrates was examined in this study. The films formed on these surfaces were analyzed by diffuse reflectance infrared Fourier transform spectroscopy, contact angle goniometry, atomic force microscopy and matrix assisted laser desorption ionization mass spectrometry. The effect of the acidity of the organic moiety and substrate composition on the film characteristics and stability is discussed. Interestingly, on the alloy surfaces, the presence of less reactive metal sites does not inhibit film formation. PMID:20039608

  20. Understanding organic film behavior on alloy and metal oxides.

    PubMed

    Raman, Aparna; Quiñones, Rosalynn; Barriger, Lisa; Eastman, Rachel; Parsi, Arash; Gawalt, Ellen S

    2010-02-01

    Native oxide surfaces of stainless steel 316L and Nitinol alloys and their constituent metal oxides, namely nickel, chromium, molybdenum, manganese, iron, and titanium, were modified with long chain organic acids to better understand organic film formation. The adhesion and stability of films of octadecylphosphonic acid, octadecylhydroxamic acid, octadecylcarboxylic acid, and octadecylsulfonic acid on these substrates were examined in this study. The films formed on these surfaces were analyzed by diffuse reflectance infrared Fourier transform spectroscopy, contact angle goniometry, atomic force microscopy, and matrix-assisted laser desorption ionization mass spectrometry. The effect of the acidity of the organic moiety and substrate composition on the film characteristics and stability is discussed. Interestingly, on the alloy surfaces, the presence of less reactive metal sites does not inhibit film formation. PMID:20039608