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Sample records for ambipolar diffusion calcuations

  1. The Heavy-Ion Approximation for Ambipolar Diffusion Calcuations for Weakly Ionized Plasmas

    SciTech Connect

    Li, P; McKee, C; Klein, R

    2006-07-27

    Ambipolar diffusion redistributes magnetic flux in weakly ionized plasmas and plays a critical role in star formation. Simulations of ambipolar diffusion using explicit MHD codes are prohibitively expensive for the level of ionization observed in molecular clouds ({approx}< 10{sup -6}) since an enormous number of time steps is required to represent the dynamics of the dominant neutral component with a time step determined by the trace ion component. Here we show that ambipolar diffusion calculations can be significantly accelerated by the 'heavy-ion approximation', in which the mass density of the ions is increased and the collisional coupling constant with the neutrals decreased such that the product remains constant. In this approximation, the ambipolar diffusion time and the ambipolar magnetic Reynolds number remain unchanged. We present three tests of the heavy-ion approximation: C-type shocks, the Wardle instability, and the 1D collapse of a magnetized slab. We show that this approximation is quite accurate provided that (1) the square of the Alfven Mach number is small compared to the ambipolar diffusion Reynolds number for dynamical problems, and that (2) the ion mass density is negligible for quasi-static problems; a specific criterion is given for the magnetized slab problem. The first condition can be very stringent for turbulent flows with large density fluctuations.

  2. Ambipolar diffusion in the middle atmosphere

    NASA Technical Reports Server (NTRS)

    Tzur, I.; Roble, R. G.

    1984-01-01

    In the middle atmosphere above 60 km, the electron concentration increases with altitude, reaching values of 10 to the 10th per cu m in the daytime ionospheric E region near 100 km. The electrons are more mobile than the ions and diffuse more rapidly through the neutral atmosphere. The electron diffusion polarizes the medium, causing an electric field to develop that acts to retard the electron diffusion and enhance the conduction current of ions. A global zonally averaged numerical model of atmosheric electricity from the ground to 100 km is used to examine the effect of ambipolar diffusion and the earth's geomagnetic field on the currents and fields in the middle atmosphere. The results show that above about 65 km, ambipolar diffusion generates local electric fields and conduction currents that balance electron diffusion currents. The electric fields and conduction currents are a few orders of magnitude larger than the vertical fields and currents calculated from the downward mapping of the ionospheric potential without taking electron diffusion into account. Ambipolar diffusion does not alter the total current flowing in the global circuit. It is a local effect where enhanced conduction currens flow to balance the electron diffusion current.

  3. TRACING TURBULENT AMBIPOLAR DIFFUSION IN MOLECULAR CLOUDS

    SciTech Connect

    Li Huabai; Houde, Martin; Lai Shihping; Sridharan, T. K.

    2010-08-01

    Though flux freezing is a good approximation frequently assumed for molecular clouds, ambipolar diffusion (AD) is inevitable at certain scales. The scale at which AD sets in can be a crucial parameter for turbulence and the star formation process. However, both observation and simulation of AD are very challenging and our knowledge of it is very limited. We recently proposed that the difference between ion and neutral velocity spectra is a signature of turbulent AD and can be used to estimate the AD scales and magnetic field strengths. Here, we present observational evidence showing that this difference between the velocity dispersions from coexistent ions and neutrals is indeed correlated with magnetic field strength.

  4. AMBIPOLAR DIFFUSION HEATING IN TURBULENT SYSTEMS

    SciTech Connect

    Li, Pak Shing; Myers, Andrew; McKee, Christopher F. E-mail: atmyers@berkeley.edu

    2012-11-20

    The temperature of the gas in molecular clouds is a key determinant of the characteristic mass of star formation. Ambipolar diffusion (AD) is considered one of the most important heating mechanisms in weakly ionized molecular clouds. In this work, we study the AD heating rate using two-fluid turbulence simulations and compare it with the overall heating rate due to turbulent dissipation. We find that for observed molecular clouds, which typically have Alfven Mach numbers of {approx}1 and AD Reynolds numbers of {approx}20, about 70% of the total turbulent dissipation is in the form of AD heating. AD has an important effect on the length scale where energy is dissipated: when AD heating is strong, most of the energy in the cascade is removed by ion-neutral drift, with a comparatively small amount of energy making it down to small scales. We derive a relation for the AD heating rate that describes the results of our simulations to within a factor of two. Turbulent dissipation, including AD heating, is generally less important than cosmic-ray heating in molecular clouds, although there is substantial scatter in both.

  5. Turbulent energy dissipation and intermittency in ambipolar diffusion magnetohydrodynamics

    NASA Astrophysics Data System (ADS)

    Momferratos, G.; Lesaffre, P.; Falgarone, E.; Pineau des Forêts, G.

    2014-09-01

    The dissipation of kinetic and magnetic energy in the interstellar medium (ISM) can proceed through viscous, Ohmic or ambipolar diffusion (AD). It occurs at very small scales compared to the scales at which energy is presumed to be injected. This localized heating may impact the ISM evolution but also its chemistry, thus providing observable features. Here, we perform 3D spectral simulations of decaying magnetohydrodynamic turbulence including the effects of AD. We find that the AD heating power spectrum peaks at scales in the inertial range, due to a strong alignment of the magnetic and current vectors in the dissipative range. AD affects much greater scales than the AD scale predicted by dimensional analysis. We find that energy dissipation is highly concentrated on thin sheets. Its probability density function follows a lognormal law with a power-law tail which hints at intermittency, a property which we quantify by use of structure function exponents. Finally, we extract structures of high dissipation, defined as connected sets of points where the total dissipation is most intense and we measure the scaling exponents of their geometric and dynamical characteristics: the inclusion of AD favours small sizes in the dissipative range.

  6. A discussion on the assumption of ambipolar diffusion of meteor trails in the Earth's upper atmosphere

    NASA Astrophysics Data System (ADS)

    Kumar, Karanam Kishore; Subrahmanyam, Kandula Venkata

    2012-09-01

    For the first time, height profiles of meteor trail decay time due to the ambipolar diffusion process are estimated using temperature and pressure measurements by the Sounding of the Atmosphere using Broadband Emission Radiometry (SABER) instrument on-board Thermosphere Ionosphere Mesosphere Energetics and Dynamics (TIMED) satellite. The comparison of the meteor trail decay time measured by a meteor radar over Thumba (8?5 N, 77°E) and SABER offered very valuable insights into the meteor trail decay processes and also provided much needed validation for assumption of ambipolar diffusion of meteor trails. It is observed that the assumption of ambipolar diffusion is valid in the height region of 90-96 km only where both SABER and radar measurements show excellent agreement in meteor trail decay time. The present analysis also shows that there are other processes which govern the meteor trail decay in the 80-90 km region, where large deviations are found between radar and SABER measurements. The differences between the SABER- and radar-observed decay times are quantified, and the processes responsible for the observed differences are also discussed extensively in the light of present understanding. The important outcome of the present study is the validation of assumption on ambipolar diffusivity of the meteor trails, which has significant implications in estimating the temperature using meteor trail decay time.

  7. Ambipolar Diffusion and Far-Infrared Polarization from the Galactic Circumnuclear Disk

    NASA Astrophysics Data System (ADS)

    Desch, S. J.; Roberge, W. G.

    1997-02-01

    We describe an implicit prediction of the accretion disk models constructed by Wardle & Königl for the circumnuclear disk (CND) of gas and dust near the Galactic center: supersonic ambipolar diffusion, an essential dynamical ingredient of the Wardle-Königl disks, will cause the alignment of dust grains because of a process described by Roberge, Hanany, & Messinger. We calculate synthetic maps of the polarized thermal emission which would be caused by ambipolar alignment in the preferred Wardle-Königl model. Our maps are in reasonable agreement with 100 μm polarimetry of the CND if we assume that the grains have shapes similar to those of grains in nearby molecular clouds and that the CND contains a disordered magnetic field in energy equipartition with its ordered field.

  8. The effect of ambipolar diffusion on low-density molecular ISM filaments

    NASA Astrophysics Data System (ADS)

    Ntormousi, Evangelia; Hennebelle, Patrick; André, Philippe; Masson, Jacques

    2016-05-01

    Context. The filamentary structure of the molecular interstellar medium and the potential link of this morphology to star formation have been brought into focus recently by high resolution observational surveys. An especially puzzling matter is that local interstellar filaments appear to have the same thickness, independent of their column density. This requires a theoretical understanding of their formation process and the physics that governs their evolution. Aims: In this work we explore a scenario in which filaments are dissipative structures of the large-scale interstellar turbulence cascade and ion-neutral friction (also called ambipolar diffusion) is affecting their sizes by preventing small-scale compressions. Methods: We employ high-resolution (5123 and 10243), 3D magnetohydrodynamic (MHD) simulations, performed with the grid code RAMSES, to investigate non-ideal MHD turbulence as a filament formation mechanism. We focus the analysis on the mass and thickness distributions of the resulting filamentary structures. Results: Simulations of both driven and decaying MHD turbulence show that the morphologies of the density and the magnetic field are different when ambipolar diffusion is included in the models. In particular, the densest structures are broader and more massive as an effect of ion-neutral friction and the power spectra of both the velocity and the density steepen at a smaller wavenumber. Conclusions: The comparison between ideal and non-ideal MHD simulations shows that ambipolar diffusion causes a shift of the filament thickness distribution towards higher values. However, none of the distributions exhibit the pronounced peak found in the observed local filaments. Limitations in dynamical range and the absence of self-gravity in these numerical experiments do not allow us to conclude at this time whether this is due to the different filament selection or due to the physics inherent of the filament formation.

  9. Effect of boundary conditions on the character of ambipolar diffusion in electrolytes.

    PubMed

    Chikina, I; Shikin, V B; Varlamov, A A

    2015-07-01

    We discuss the details of ambipolar relaxation of the electric field in liquid asymmetric electrolytes to its stationary value. It is demonstrated that the account for finite boundary conditions modifies the existing concepts of this diffusion process. In particular, we succeeded to suggest a qualitatively correct explanation of the observed distribution of the electric fields over the bulk of the cuvette and its nonmonotonic behavior in measurements on the finite-size cuvette. We analyze the conditions of such an anomaly at the intermediate stages of the relaxation process. PMID:26274165

  10. Effect of boundary conditions on the character of ambipolar diffusion in electrolytes

    NASA Astrophysics Data System (ADS)

    Chikina, I.; Shikin, V. B.; Varlamov, A. A.

    2015-07-01

    We discuss the details of ambipolar relaxation of the electric field in liquid asymmetric electrolytes to its stationary value. It is demonstrated that the account for finite boundary conditions modifies the existing concepts of this diffusion process. In particular, we succeeded to suggest a qualitatively correct explanation of the observed distribution of the electric fields over the bulk of the cuvette and its nonmonotonic behavior in measurements on the finite-size cuvette. We analyze the conditions of such an anomaly at the intermediate stages of the relaxation process.

  11. Sub-Alfvenic Non-Ideal MHD Turbulence Simulations with Ambipolar Diffusion: I. Turbulence Statistics

    SciTech Connect

    Klein, R I; Li, P S; McKee, C F; Fisher, R

    2008-04-10

    Most numerical investigations on the role of magnetic fields in turbulent molecular clouds (MCs) are based on ideal magneto-hydrodynamics (MHD). However, MCs are weakly ionized, so that the time scale required for the magnetic field to diffuse through the neutral component of the plasma by ambipolar diffusion (AD) can be comparable to the dynamical time scale. We have performed a series of 256{sup 3} and 512{sup 3} simulations on supersonic but sub-Alfvenic turbulent systems with AD using the Heavy-Ion Approximation developed in Li et al. (2006). Our calculations are based on the assumption that the number of ions is conserved, but we show that these results approximately apply to the case of time-dependent ionization in molecular clouds as well. Convergence studies allow us to determine the optimal value of the ionization mass fraction when using the heavy-ion approximation for low Mach number, sub-Alfvenic turbulent systems. We find that ambipolar diffusion steepens the velocity and magnetic power spectra compared to the ideal MHD case. Changes in the density PDF, total magnetic energy, and ionization fraction are determined as a function of the AD Reynolds number. The power spectra for the neutral gas properties of a strongly magnetized medium with a low AD Reynolds number are similar to those for a weakly magnetized medium; in particular, the power spectrum of the neutral velocity is close to that for Burgers turbulence.

  12. Ambipolar diffusion in low-mass star formation. I. General comparison with the ideal magnetohydrodynamic case

    NASA Astrophysics Data System (ADS)

    Masson, J.; Chabrier, G.; Hennebelle, P.; Vaytet, N.; Commerçon, B.

    2016-03-01

    Angular momentum transport and the formation of rotationally supported structures are major issues in our understanding of protostellar core formation. Whereas purely hydrodynamical simulations lead to large Keplerian disks, ideal magnetohydrodynamics (MHD) models yield the opposite result, with essentially no disk formation. This stems from the flux-freezing condition in ideal MHD, which leads to strong magnetic braking. In this paper, we provide a more accurate description of the evolution of the magnetic flux redistribution by including resistive terms in the MHD equations. We focus more particularly on the effect of ambipolar diffusion on the properties of the first Larson core and its surrounding structure, exploring various initial magnetisations and magnetic field versus rotation axis orientations of a 1 M⊙ collapsing prestellar dense core. We used the non-ideal magnetohydrodynamics version of the adaptive mesh refinement code RAMSES to carry out these calculations. The resistivities required to calculate the ambipolar diffusion terms were computed using a reduced chemical network of charged, neutral, and grain species. Including ambipolar diffusion leads to the formation of a magnetic diffusion barrier (also known as the decoupling stage) in the vicinity of the core, which prevents accumulation of magnetic flux in and around the core and amplification of the field above 0.1 G. The mass and radius of the first Larson core, however, remain similar between ideal and non-ideal MHD models. This diffusion plateau, preventing further amplification of the field and reorganising the field topology, has crucial consequences for magnetic braking processes, allowing the formation of disk structures. Magnetically supported outflows launched in ideal MHD models are weakened or even disappear when using non-ideal MHD. In contrast to ideal MHD calculations, misalignment between the initial rotation axis and the magnetic field direction does not significantly affect the

  13. Thanatology in protoplanetary discs. The combined influence of Ohmic, Hall, and ambipolar diffusion on dead zones

    NASA Astrophysics Data System (ADS)

    Lesur, Geoffroy; Kunz, Matthew W.; Fromang, Sébastien

    2014-06-01

    Protoplanetary discs are poorly ionised due to their low temperatures and high column densities and are therefore subject to three "non-ideal" magnetohydrodynamic (MHD) effects: Ohmic dissipation, ambipolar diffusion, and the Hall effect. The existence of magnetically driven turbulence in these discs has been a central question since the discovery of the magnetorotational instability (MRI). Early models considered Ohmic diffusion only and led to a scenario of layered accretion, in which a magnetically "dead" zone in the disc midplane is embedded within magnetically "active" surface layers at distances of about 1-10 au from the central protostellar object. Recent work has suggested that a combination of Ohmic dissipation and ambipolar diffusion can render both the midplane and surface layers of the disc inactive and that torques due to magnetically driven outflows are required to explain the observed accretion rates. We reassess this picture by performing three-dimensional numerical simulations that include all three non-ideal MHD effects for the first time. We find that the Hall effect can generically "revive" dead zones by producing a dominant azimuthal magnetic field and a large-scale Maxwell stress throughout the midplane, provided that the angular velocity and magnetic field satisfy Ω·B > 0. The attendant large magnetic pressure modifies the vertical density profile and substantially increases the disc scale height beyond its hydrostatic value. Outflows are produced but are not necessary to explain accretion rates ≲ 10-7 M⊙ yr-1. The flow in the disc midplane is essentially laminar, suggesting that dust sedimentation may be efficient. These results demonstrate that if the MRI is relevant for driving mass accretion in protoplanetary discs, one must include the Hall effect to obtain even qualitatively correct results. Appendices are available in electronic form at http://www.aanda.org

  14. THE EFFECT OF MAGNETIC FIELDS AND AMBIPOLAR DIFFUSION ON CORE MASS FUNCTIONS

    SciTech Connect

    Bailey, Nicole D.; Basu, Shantanu E-mail: basu@uwo.ca

    2013-03-20

    Linear analysis of the formation of protostellar cores in planar magnetic interstellar clouds yields information about length scales involved in star formation. Combining these length scales with various distributions of other environmental variables (i.e., column density and mass-to-flux ratio) and applying Monte Carlo methods allow us to produce synthetic core mass functions (CMFs) for different environmental conditions. Our analysis shows that the shape of the CMF is directly dependent on the physical conditions of the cloud. Specifically, magnetic fields act to broaden the mass function and develop a high-mass tail while ambipolar diffusion will truncate this high-mass tail. In addition, we analyze the effect of small number statistics on the shape and high-mass slope of the synthetic CMFs. We find that observed CMFs are severely statistically limited, which has a profound effect on the derived slope for the high-mass tail.

  15. INCORPORATING AMBIPOLAR AND OHMIC DIFFUSION IN THE AMR MHD CODE RAMSES

    SciTech Connect

    Masson, J.; Mulet-Marquis, C.; Chabrier, G.; Teyssier, R.

    2012-08-01

    We have implemented non-ideal magnetohydrodynamics (MHD) effects in the adaptive mesh refinement code RAMSES, namely, ambipolar diffusion and Ohmic dissipation, as additional source terms in the ideal MHD equations. We describe in details how we have discretized these terms using the adaptive Cartesian mesh, and how the time step is diminished with respect to the ideal case, in order to perform a stable time integration. We have performed a large suite of test runs, featuring the Barenblatt diffusion test, the Ohmic diffusion test, the C-shock test, and the Alfven wave test. For the latter, we have performed a careful truncation error analysis to estimate the magnitude of the numerical diffusion induced by our Godunov scheme, allowing us to estimate the spatial resolution that is required to address non-ideal MHD effects reliably. We show that our scheme is second-order accurate, and is therefore ideally suited to study non-ideal MHD effects in the context of star formation and molecular cloud dynamics.

  16. Midnight ionosphere collapse at Arecibo and its relationship to the neutral wind, electric field, and ambipolar diffusion

    NASA Astrophysics Data System (ADS)

    Gong, Yun; Zhou, Qihou; Zhang, Shaodong; Aponte, Nestor; Sulzer, Michael; Gonzalez, Sixto

    2012-08-01

    We report the analysis of "midnight collapse," a large drop in the F-layer peak height (HmF2) around midnight, observed at Arecibo during Jan. 14-22, 2010. During the nine nights of observations, the first four nights (Jan. 14-17) exhibited modest drops in HmF2 while the last five nights (Jan. 18-22) showed more severe drops. We examine the roles played by the meridional wind, electric field, and ambipolar diffusion in driving the vertical ion motion. The collapse process can be classified into three stages: preconditioning, initial descent, and sustained descent. Severe collapses occur when HmF2 is preconditioned high prior to the collapse. Ambipolar diffusion is most important during the initial descent. Neutral wind and electric field are responsible for sustaining the collapse. During Jan. 18-22, HmF2 was pushed high by the neutral wind before the collapse started. Neutral wind and electric field were in phase during the sustained severe collapses. The diurnal tide of the meridional wind provided the general condition for the collapses. The terdiurnal tide was most important to cause the difference between the two periods in our observation. Previous studies largely emphasized meridional wind being the dominant mechanism causing midnight collapse. Our study suggests that electric field and ambipolar diffusion also play an important role and the former can be the most dominant factor in some cases.

  17. Energy balance in the solar transition region. I - Hydrostatic thermal models with ambipolar diffusion

    NASA Technical Reports Server (NTRS)

    Fontenla, J. M.; Avrett, E. H.; Loeser, R.

    1990-01-01

    The energy balance in the lower transition region is analyzed by constructing theoretical models which satisfy the energy balance constraint. The energy balance is achieved by balancing the radiative losses and the energy flowing downward from the corona. This energy flow is mainly in two forms: conductive heat flow and hydrogen ionization energy flow due to ambipolar diffusion. Hydrostatic equilibrium is assumed, and, in a first calculation, local mechanical heating and Joule heating are ignored. In a second model, some mechanical heating compatible with chromospheric energy-balance calculations is introduced. The models are computed for a partial non-LTE approach in which radiation departs strongly from LTE but particles depart from Maxwellian distributions only to first order. The results, which apply to cases where the magnetic field is either absent, or uniform and vertical, are compared with the observed Lyman lines and continuum from the average quiet sun. The approximate agreement suggests that this type of model can roughly explain the observed intensities in a physically meaningful way, assuming only a few free parameters specified as chromospheric boundary conditions.

  18. A numerical study of the effects of ambipolar diffusion on the collapse of magnetic gas clouds

    NASA Technical Reports Server (NTRS)

    Black, D. C.; Scott, E. H.

    1982-01-01

    The gravitational collapse of isothermal, nonrotating magnetic gas clouds have been calculated numerically, including the effects of ambipolar diffusion. The fractional ionization in the clouds is approximated by a power-law function of the gas density, f = K/n to the q-power, where K and q are adjustable parameters. Eleven numerical experiments were run, and the results indicate that the asymptotic character of collapse is determined mainly by the value of q and is largely independent of the other parameters characterizing a cloud (e.g., K, cloud mass). In particular, there is nearly a one-to-one correspondence between q and the slope, x, of the central magnetic field strength-gas density relationship. If q is no more than 0.8, a cloud collapses asymptotically, as though the magnetic field were 'frozen' to the neutral matter. The magnetic field strength at the center of a collapsing cloud is strongly amplified during collapse even for values of q of about 1, despite extremely low values of fractional ionization. A discussion of the theoretical basis for this unexpected behavior is given. Possible implications of our results for the problems of magnetic braking of rotating protostars and star formation in general are also presented.

  19. Global Simulations of Protoplanetary Disks With Ohmic Resistivity and Ambipolar Diffusion

    NASA Astrophysics Data System (ADS)

    Gressel, Oliver; Turner, Neal J.; Nelson, Richard P.; McNally, Colin P.

    2015-03-01

    Protoplanetary disks (PPDs) are believed to accrete onto their central T Tauri star because of magnetic stresses. Recently published shearing box simulations indicate that Ohmic resistivity, ambipolar diffusion (AD) and the Hall effect all play important roles in disk evolution. In the presence of a vertical magnetic field, the disk remains laminar between 1-5 AU, and a magnetocentrifugal disk wind forms that provides an important mechanism for removing angular momentum. Questions remain, however, about the establishment of a true physical wind solution in the shearing box simulations because of the symmetries inherent in the local approximation. We present global MHD simulations of PPDs that include Ohmic resistivity and AD, where the time-dependent gas-phase electron and ion fractions are computed under FUV and X-ray ionization with a simplified recombination chemistry. Our results show that the disk remains laminar, and that a physical wind solution arises naturally in global disk models. The wind is sufficiently efficient to explain the observed accretion rates. Furthermore, the ionization fraction at intermediate disk heights is large enough for magneto-rotational channel modes to grow and subsequently develop into belts of horizontal field. Depending on the ionization fraction, these can remain quasi-global, or break-up into discrete islands of coherent field polarity. The disk models we present here show a dramatic departure from our earlier models including Ohmic resistivity only. It will be important to examine how the Hall effect modifies the evolution, and to explore the influence this has on the observational appearance of such systems, and on planet formation and migration.

  20. Influence of the ambipolar-to-free diffusion transition on dust particle charge in a complex plasma afterglow

    SciTech Connect

    Coueedel, L.; Mikikian, M.; Boufendi, L.

    2008-06-15

    The influence of diffusive losses on residual dust charge in a complex plasma afterglow has been investigated. The residual charge distribution was measured and exhibits a mean value Q{sub dres}{approx}(-3e-5e) with a tail in the positive region. The experimental results have been compared with simulated charge distributions. The dust residual charges were simulated based on a model developed to describe complex plasma decay. The experimental and simulated data show that the transition from ambipolar to free diffusion in the decaying plasma plays a significant role in determining the residual dust particle charges. The presence of positively charged dust particles is explained by a broadening of the charge distribution function in the afterglow plasma.

  1. Direct measurement of ambipolar diffusion in bulk silicon by ultrafast infrared imaging of laser-induced microplasmas

    NASA Astrophysics Data System (ADS)

    Mouskeftaras, Alexandros; Chanal, Margaux; Chambonneau, Maxime; Clady, Raphaël; Utéza, Olivier; Grojo, David

    2016-01-01

    Carrier kinetics in the density range of N = 10 17 - 10 20 cm - 3 is investigated inside the bulk of crystalline silicon. Most conventional experimental techniques used to study carrier mobility are indirect and lack sensitivity because of charging effects and recombination on the surface. An all optical technique is used to overcome these obstacles. By focusing 1.3-μm femtosecond laser pulses in the volume, we inject an initial free-carrier population by two-photon absorption. Then, we use pump-and-probe infrared microscopy as a tool to obtain simultaneous measurements of the carrier diffusion and recombination dynamics in a microscale region deep inside the material. The rate equation model is used to simulate our experimental results. We report a constant ambipolar diffusion coefficient D a of 2.5 cm 2 s - 1 and an effective carrier lifetime τ eff of 2.5 ns at room temperature. A discussion on our findings at these high-injection levels is presented.

  2. Influence of nonideality of semiconductor plasma on the ambipolar diffusion of ionized impurity

    SciTech Connect

    Vasilevskii, M.I.; Murav'ev, V.A.; Panteleev, V.A. )

    1988-07-01

    Numerous works have been devoted to taking account of the internal electric field in Fick's law, describing the diffusion of ionizational impurity. Doubts have also been considered on the basis that the current-carrier gas screens the ions, which reduces the force acting on them. In this present work, systematic consideration of this problem is attempted, on the basis of the principles of nonequilibrium thermodynamics.

  3. Kinetic Monte Carlo Study of Ambipolar Lithium Ion and Electron–Polaron Diffusion into Nanostructured TiO2

    SciTech Connect

    Yu, Jianguo; Sushko, Maria L.; Kerisit, Sebastien N.; Rosso, Kevin M.; Liu, Jun

    2012-08-02

    Nanostructured titania (TiO2) polymorphs have proved to be promising electrode materials for next generation lithium-ion batteries. However, there is still a lack of understanding of the fundamental microscopic processes that control charge transport in these materials. Here we present microscopic simulations of the collective dynamics of lithium-ion (Li+) and charge compensating electron polarons (e-) in rutile TiO2 nanoparticles in contact with idealized conductive matrix and electrolyte. Kinetic Monte Carlo simulations are used, parameterized by molecular dynamics-based predictions of activation energy barriers for Li+ and e- diffusion. Simulations reveal the central role of electrostatic coupling between Li+ and e- on their collective drift diffusion at the nanoscale. They also demonstrate that high contact area between conductive matrix and rutile nanoparticles leads to undesirable coupling-induced surface saturation effects during Li+ insertion, which limits the overall capacity and conductivity of the material. These results help provide guidelines for design of nanostructured electrode materials with improved electrochemical performance.

  4. Non-ambipolar transport in a magnetic divertor

    SciTech Connect

    Strawitch, C M; Emmert, G A

    1980-02-01

    Plasma transport is studied in a simulated magnetic divertor in the Wisconsin single ring DC machine. The transport perpendicular and parallel to the magnetic field is shown to be non-ambipolar by a variety of measurements, but can be forced to be ambipolar by an appropriately designed divertor target plate. The density profile in the scrape-off zone agrees with the predictions of a one-dimensional diffusion equation that assumes classical cross-field transport and plasma flow parallel to the field at the local ion acoustic velocity.

  5. Achieving an intense enough maintenance electric field in a low-pressure discharge sustained by a microwave field under ambipolar diffusion regime such that periodic parametric instabilities are generated

    NASA Astrophysics Data System (ADS)

    Moisan, M.; Nowakowska, H.

    2015-11-01

    The intensity of the maintenance electric field of a given discharge is one of its internal parameters. Under ambipolar diffusion conditions, it is almost exclusively set by particle losses, which are related to the dimensions of the discharge vessel and to the gas pressure, and ultimately are determined by the electron energy distribution function. For instance, raising the density of microwave power absorbed in a discharge tube essentially increases the electron density without much increasing the amplitude of the maintenance E-field. To raise the intensity of this E-field in such a case, one needs to reduce the volume into which electromagnetic power is absorbed relative to the diffusion volume, i.e. the volume within which electrons transfer their power through collisions with heavy particles. To show this point, we consider a power balance based on the power lost per electron through collisions with heavy particles, θ L, to the power absorbed (over a period of the microwave field) per electron in the discharge, θ A. The power θ A, which depends on E02 , the square of the amplitude (intensity) of the maintenance electric field, adjusts to compensate for the power lost θ L. The analysis presented is achieved for a particular microwave discharge configuration that is known to provide an intense E 0-field, which means x  ⩾  λ De, where x is the oscillation amplitude of electrons in the E 0-field and λ De the electron Debye length. Such a condition allows one to observe periodic parametric instabilities at, or close to, the electron-plasma frequency f pe and at their corresponding ion-plasma frequency f pi, these oscillations being caused by the simultaneous propagation of an electron-plasma wave and an ion-plasma wave in the discharge as a result of an applied ‘pump’ power, which also sustains the discharge. A 2D hydrodynamic calculation of the specific plasma discharge system is performed, which yields the value of the x/λ De ratio in

  6. Ambipolar potential formation in TMX

    SciTech Connect

    Correll, D.L.; Allen, S.L.; Casper, T.A.

    1981-05-05

    TMX experimental data on ambipolar potential control and on the accompanying electrostatic confinement are reported. New results on the radial dependence of the central-cell confining potential are given. Radial and axial particle losses as well as scaling of the central-cell axial confinement are discussed.

  7. Passivated ambipolar black phosphorus transistors.

    PubMed

    Yue, Dewu; Lee, Daeyeong; Jang, Young Dae; Choi, Min Sup; Nam, Hye Jin; Jung, Duk-Young; Yoo, Won Jong

    2016-07-01

    We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ∼83 cm(2) V(-1) s(-1) from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ∼10 nm thick BP flake was used. PMID:27283027

  8. Ambipolar phosphorene field effect transistor.

    PubMed

    Das, Saptarshi; Demarteau, Marcel; Roelofs, Andreas

    2014-11-25

    In this article, we demonstrate enhanced electron and hole transport in few-layer phosphorene field effect transistors (FETs) using titanium as the source/drain contact electrode and 20 nm SiO2 as the back gate dielectric. The field effect mobility values were extracted to be ∼38 cm(2)/Vs for electrons and ∼172 cm(2)/Vs for the holes. On the basis of our experimental data, we also comprehensively discuss how the contact resistances arising due to the Schottky barriers at the source and the drain end effect the different regime of the device characteristics and ultimately limit the ON state performance. We also propose and implement a novel technique for extracting the transport gap as well as the Schottky barrier height at the metal-phosphorene contact interface from the ambipolar transfer characteristics of the phosphorene FETs. This robust technique is applicable to any ultrathin body semiconductor which demonstrates symmetric ambipolar conduction. Finally, we demonstrate a high gain, high noise margin, chemical doping free, and fully complementary logic inverter based on ambipolar phosphorene FETs. PMID:25329532

  9. Passivated ambipolar black phosphorus transistors

    NASA Astrophysics Data System (ADS)

    Yue, Dewu; Lee, Daeyeong; Jang, Young Dae; Choi, Min Sup; Nam, Hye Jin; Jung, Duk-Young; Yoo, Won Jong

    2016-06-01

    We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ~83 cm2 V-1 s-1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ~10 nm thick BP flake was used.We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ~83 cm2 V-1 s-1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ~10 nm thick BP flake was used. Electronic supplementary information (ESI) available: Transfer characteristics of BP field effect transistors (BV1-BV4) (Fig. S1 and S2 and Table S1); output characteristics of BP field effect transistors in different directions (Fig. S3

  10. Ambipolar magnetic fluctuation-induced heat transport in toroidal devices

    SciTech Connect

    Terry, P.W.; Fiksel, G.; Ji, H.; Almagri, A.F.; Cekic, M.; Den Hartog, D.J.; Diamond, P.H.; Prager, S.C.; Sarff, J.S.; Shen, W.; Stoneking, M.; Ware, A.S.

    1996-05-01

    The total magnetic fluctuation-induced electron thermal flux has been determined in the Madison Symmetric Torus (MST) reversed-field pinch [Fusion Technol. {bold 19}, 131 (1991)] from the measured correlation of the heat flux along perturbed fields with the radial component of the perturbed field. In the edge region the total flux is convective and intrinsically ambipolar constrained, as evidenced by the magnitude of the thermal diffusivity, which is well approximated by the product of ion thermal velocity and the magnetic diffusivity. A self-consistent theory is formulated and shown to reproduce the experimental results, provided nonlinear charge aggregation in streaming electrons is accounted for in the theory. For general toroidal configurations, it is shown that ambipolar constrained transport applies when remote magnetic fluctuations (i.e., global modes resonant at distant rational surfaces) dominate the flux. Near locations where the dominant modes are resonant, the transport is nonambipolar. This agrees with the radial variation of diffusivity in MST. Expectations for the tokamak are also discussed. {copyright} {ital 1996 American Institute of Physics.}

  11. Direct current-self-sustained non-ambipolar plasma at low pressure

    SciTech Connect

    Chen, Zhiying; Chen, Lee; Funk, Merritt

    2013-12-16

    For decades, non-ambipolar diffusion has been observed and studied in laboratory plasmas that contain a double layer. However, self-sustained non-ambipolar plasma has yet to be demonstrated. This article reports the method and results for achieving such a condition at low pressure, with a wide power range (as low as 6 W). The findings reveal that to achieve self-sustained non-ambipolar plasma, both the balance between electron and ion heating and the space-potential gradient are critical. The plasma reactor developed in this work has potential applications that include microelectronic surface processing and space propulsion, via space-charge-neutral plasma-beam thruster, when operated in the high power regime.

  12. Current density fluctuations and ambipolarity of transport

    SciTech Connect

    Shen, W.; Dexter, R.N.; Prager, S.C.

    1991-10-01

    The fluctuation in the plasma current density is measured in the MIST reversed field pinch experiment. Such fluctuations, and the measured radial profile of the k spectrum of magnetic fluctuations, supports the view and that low frequency fluctuations (f < 30 kHz) are tearing modes and high frequency fluctuations (30 kHz < f < 250 kHz) are localized turbulence in resonance with the local equilibrium magnetic field (i.e., k {center_dot} B = 0). Correlation of current density and magnetic fluctuations (< {tilde j}{parallel}{tilde B}{sub r} >) demonstrates that radial particle transport from particle motion parallel to a fluctuating magnetic field is ambipolar over the full frequency range.

  13. Current density fluctuations and ambipolarity of transport

    SciTech Connect

    Shen, W.; Dexter, R.N.; Prager, S.C.

    1991-10-01

    The fluctuation in the plasma current density is measured in the MIST reversed field pinch experiment. Such fluctuations, and the measured radial profile of the k spectrum of magnetic fluctuations, supports the view and that low frequency fluctuations (f < 30 kHz) are tearing modes and high frequency fluctuations (30 kHz < f < 250 kHz) are localized turbulence in resonance with the local equilibrium magnetic field (i.e., k {center dot} B = 0). Correlation of current density and magnetic fluctuations (< {tilde j}{parallel}{tilde B}{sub r} >) demonstrates that radial particle transport from particle motion parallel to a fluctuating magnetic field is ambipolar over the full frequency range.

  14. Edge ambipolar potential in toroidal fusion plasmasa)

    NASA Astrophysics Data System (ADS)

    Spizzo, G.; Vianello, N.; White, R. B.; Abdullaev, S. S.; Agostini, M.; Cavazzana, R.; Ciaccio, G.; Puiatti, M. E.; Scarin, P.; Schmitz, O.; Spolaore, M.; Terranova, D.

    2014-05-01

    A series of issues with toroidally confined fusion plasmas are related to the generation of 3D flow patterns by means of edge magnetic islands, embedded in a chaotic field and interacting with the wall. These issues include the Greenwald limit in Tokamaks and reversed-field pinches, the collisionality window for ELM mitigation with the resonant magnetic perturbations (RMPs) in Tokamaks, and edge islands interacting with the bootstrap current in stellarators. Measurements of the 2D map of the edge electric field Er(r =a,θ,ϕ) in the RFX reversed-field pinch show that Er has the same helicity of the magnetic islands generated by a m/n perturbation: in fact, defining the helical angle u =mθ-nϕ+ωt, maps show a sinusoidal dependence as a function of u, Er=E ˜rsin u. The associated E × B flow displays a huge convective cell with v(a)≠0 which, in RFX and near the Greenwald limit, determines a stagnation point for density and a reversal of the sign of Er. From a theoretical point of view, the question is how a perturbed toroidal flux of symmetry m/n gives rise to an ambipolar potential Φ =Φ˜sin u. On the basis of a model developed with the guiding center code Orbit and applied to RFX and the TEXTOR tokamak, we will show that the presence of an m/n perturbation in any kind of device breaks the toroidal symmetry with a drift proportional to the gyroradius ρ, thus larger for ions (ρi ≫ ρe). Immediately, an ambipolar potential arises to balance the drifts, with the same symmetry as the original perturbation.

  15. Edge ambipolar potential in toroidal fusion plasmas

    SciTech Connect

    Spizzo, G. Vianello, N.; Agostini, M.; Puiatti, M. E.; Scarin, P.; Spolaore, M.; Terranova, D.; White, R. B.; Abdullaev, S. S.; Schmitz, O.; Cavazzana, R.; Ciaccio, G.

    2014-05-15

    A series of issues with toroidally confined fusion plasmas are related to the generation of 3D flow patterns by means of edge magnetic islands, embedded in a chaotic field and interacting with the wall. These issues include the Greenwald limit in Tokamaks and reversed-field pinches, the collisionality window for ELM mitigation with the resonant magnetic perturbations (RMPs) in Tokamaks, and edge islands interacting with the bootstrap current in stellarators. Measurements of the 2D map of the edge electric field E{sup r}(r=a,θ,ϕ) in the RFX reversed-field pinch show that E{sup r} has the same helicity of the magnetic islands generated by a m/n perturbation: in fact, defining the helical angle u=mθ−nϕ+ωt, maps show a sinusoidal dependence as a function of u, E{sup r}=E{sup ~r}sin u. The associated E × B flow displays a huge convective cell with v(a)≠0 which, in RFX and near the Greenwald limit, determines a stagnation point for density and a reversal of the sign of E{sup r}. From a theoretical point of view, the question is how a perturbed toroidal flux of symmetry m/n gives rise to an ambipolar potential Φ=Φ{sup ~}sin u. On the basis of a model developed with the guiding center code ORBIT and applied to RFX and the TEXTOR tokamak, we will show that the presence of an m/n perturbation in any kind of device breaks the toroidal symmetry with a drift proportional to the gyroradius ρ, thus larger for ions (ρ{sub i} ≫ ρ{sub e}). Immediately, an ambipolar potential arises to balance the drifts, with the same symmetry as the original perturbation.

  16. Electrolyte-Gated Graphene Ambipolar Frequency Multipliers for Biochemical Sensing.

    PubMed

    Fu, Wangyang; Feng, Lingyan; Mayer, Dirk; Panaitov, Gregory; Kireev, Dmitry; Offenhäusser, Andreas; Krause, Hans-Joachim

    2016-04-13

    In this Letter, the ambipolar properties of an electrolyte-gated graphene field-effect transistor (GFET) have been explored to fabricate frequency-doubling biochemical sensor devices. By biasing the ambipolar GFETs in a common-source configuration, an input sinusoidal voltage at frequency f applied to the electrolyte gate can be rectified to a sinusoidal wave at frequency 2f at the drain electrode. The extraordinary high carrier mobility of graphene and the strong electrolyte gate coupling provide the graphene ambipolar frequency doubler an unprecedented unity gain, as well as a detection limit of ∼4 pM for 11-mer single strand DNA molecules in 1 mM PBS buffer solution. Combined with an improved drift characteristics and an enhanced low-frequency 1/f noise performance by sampling at doubled frequency, this good detection limit suggests the graphene ambipolar frequency doubler a highly promising biochemical sensing platform. PMID:26928906

  17. Ambipolar solution-processed hybrid perovskite phototransistors

    PubMed Central

    Li, Feng; Ma, Chun; Wang, Hong; Hu, Weijin; Yu, Weili; Sheikh, Arif D.; Wu, Tom

    2015-01-01

    Organolead halide perovskites have attracted substantial attention because of their excellent physical properties, which enable them to serve as the active material in emerging hybrid solid-state solar cells. Here we investigate the phototransistors based on hybrid perovskite films and provide direct evidence for their superior carrier transport property with ambipolar characteristics. The field-effect mobilities for triiodide perovskites at room temperature are measured as 0.18 (0.17) cm2 V−1 s−1 for holes (electrons), which increase to 1.24 (1.01) cm2 V−1 s−1 for mixed-halide perovskites. The photoresponsivity of our hybrid perovskite devices reaches 320 A W−1, which is among the largest values reported for phototransistors. Importantly, the phototransistors exhibit an ultrafast photoresponse speed of less than 10 μs. The solution-based process and excellent device performance strongly underscore hybrid perovskites as promising material candidates for photoelectronic applications. PMID:26345730

  18. Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics.

    PubMed

    Torricelli, Fabrizio; Ghittorelli, Matteo; Smits, Edsger C P; Roelofs, Christian W S; Janssen, René A J; Gelinck, Gerwin H; Kovács-Vajna, Zsolt M; Cantatore, Eugenio

    2016-01-13

    Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 10(5) are obtained. This enables easy integration into low-power complementary logic and volatile electronic memories. PMID:26573767

  19. Ambipolar acceleration of ions in a magnetic nozzle

    SciTech Connect

    Arefiev, Alexey V.; Breizman, Boris N.

    2008-04-15

    This paper describes a magnetic nozzle with a magnetic mirror configuration that transforms a collisionless subsonic plasma flow into a supersonic jet expanding into the vacuum. The nozzle converts electron thermal energy into the ion kinetic energy via an ambipolar electric field. The ambipolar potential in the expanding plume involves a time-dependent rarefaction wave. Travelling through the rarefaction wave, electrons lose some kinetic energy and can become trapped downstream from the mirror throat. This work presents a rigorous adiabatic description of the trapped electron population. It examines the impact of the adiabatic cooling of the trapped electrons on the ambipolar potential and the ensuing ion acceleration. The problem is formulated for an arbitrary incoming electron distribution and then a ''water-bag'' electron distribution is used to obtain a closed-form analytical solution.

  20. Ambipolar/unipolar conversion in graphene transistors by surface doping

    NASA Astrophysics Data System (ADS)

    Feng, Tingting; Xie, Dan; Zhao, Haiming; Li, Gang; Xu, Jianlong; Ren, Tianling; Zhu, Hongwei

    2013-11-01

    An ambipolar/unipolar conversion of conduction polarity in bottom-gate graphene field-effect transistor (FET) was realized by intended/unintended surface doping. Exposing the graphene FET in air made it fully p-type while covering graphene with Al nanofilm or poly(ethylene imine) (PEI) layer yielded a recovery of ambipolar conduction. The alteration of the conduction polarity in graphene FET was due to hole or electron-doping effect on graphene. Distinct changes in carrier mobility and current-voltage relationship were discussed between graphene with Al and PEI doping, and the dielectric screening by PEI was proposed as the possible mechanism.

  1. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.

    PubMed

    Zhu, Weinan; Yogeesh, Maruthi N; Yang, Shixuan; Aldave, Sandra H; Kim, Joon-Seok; Sonde, Sushant; Tao, Li; Lu, Nanshu; Akinwande, Deji

    2015-03-11

    High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles. PMID:25715122

  2. Ambipolar charge transport in microcrystalline silicon thin-film transistors

    SciTech Connect

    Knipp, Dietmar; Marinkovic, M.; Chan, Kah-Yoong; Gordijn, Aad; Stiebig, Helmut

    2011-01-15

    Hydrogenated microcrystalline silicon ({mu}c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on {mu}c-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the {mu}c-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm{sup 2}/V s and 10-15 cm{sup 2}/V s, respectively. In this work, the electrical characteristics of the ambipolar {mu}c-Si:H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar {mu}c-Si:H TFTs.

  3. Entropy production determination of the ambipolar solution nearest equilibrium

    SciTech Connect

    Catto, P.J.; Myra, J.R.

    1984-10-01

    A general derivation of the steady state entropy production equation is presented for a confined plasma which loses particles and energy via radial transport and, perhaps, end loss. The resulting equation is employed to determine which root or solution is closest to thermodynamic equilibrium when more than one self-consistent or ambipolar solution is possible.

  4. Ambipolar Black Phosphorus MOSFETs With Record n-Channel Transconductance

    NASA Astrophysics Data System (ADS)

    Haratipour, Nazila; Koester, Steven J.

    2016-01-01

    Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multi-layer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before passivation, devices with 0.3-um gate length behaved as p-MOSFETs with peak extrinsic transconductance, gm, of 282 uS/um at VDS = -2 V. After passivation, the same devices displayed ambipolar behavior, and when tested as n-MOSFETs, had peak gm = 66 uS/um at VDS = +2 V, and similar devices on the same wafer had gm as high as 80 uS/um. These results are an important step toward realization of high-performance black phosphorus complementary logic circuits.

  5. Investigation of charge injection characteristics in diketopyrrolopyrrole ambipolar semiconducting polymers

    NASA Astrophysics Data System (ADS)

    Lee, Seon Jeng; Jung, Seok Heon; Lee, Jin-Kyun; Kim, Cheawon; Lee, Mi Jung

    2014-10-01

    A semiconducting polymers with conjugated diketopyrrolopyrrole (DPP) unit was developed for high performance ambipolar organic field-effect transistors (OFETs). We report electrical characteristics of DPP OFETs in various ways which measured transistor and inverter performance with various bias conditions and self-assembled monolayers (SAMs) treatment. Ambipolar DPP conjugated polymer OFETs showed high hole and electron mobility of μh=0.57 cm2V-1s-1 and μe=0.51 cm2V-1s-1 with O2 plasma treatment and 1-decanethiol SAMs treatment, respectively with annealing at 100°C. Contact resistance effect on mobilities was investigated by measuring contact resistance during device operation through gated four-point probe (gFPP) and simultaneous contact resistance extraction model directly from current voltage characteristics.

  6. Electrically induced ambipolar spin vanishments in carbon nanotubes

    PubMed Central

    Matsumoto, D.; Yanagi, K.; Takenobu, T.; Okada, S.; Marumoto, K.

    2015-01-01

    Carbon nanotubes (CNTs) exhibit various excellent properties, such as ballistic transport. However, their electrically induced charge carriers and the relation between their spin states and the ballistic transport have not yet been microscopically investigated because of experimental difficulties. Here we show an electron spin resonance (ESR) study of semiconducting single-walled CNT thin films to investigate their spin states and electrically induced charge carriers using transistor structures under device operation. The field-induced ESR technique is suitable for microscopic investigation because it can directly observe spins in the CNTs. We observed a clear correlation between the ESR decrease and the current increase under high charge density conditions, which directly demonstrated electrically induced ambipolar spin vanishments in the CNTs. The result provides a first clear evidence of antimagnetic interactions between spins of electrically induced charge carriers and vacancies in the CNTs. The ambipolar spin vanishments would contribute the improvement of transport properties of CNTs because of greatly reduced carrier scatterings. PMID:26148487

  7. Evanescent ergosurfaces and ambipolar hyperkähler metrics

    NASA Astrophysics Data System (ADS)

    Niehoff, Benjamin E.; Reall, Harvey S.

    2016-04-01

    A supersymmetric solution of 5d supergravity may admit an `evanescent ergosurface': a timelike hypersurface such that the canonical Killing vector field is timelike everywhere except on this hypersurface. The hyperkähler `base space' of such a solution is `ambipolar', changing signature from (+ + ++) to (- - --) across a hypersurface. In this paper, we determine how the hyperkähler structure must degenerate at the hyper-surface in order for the 5d solution to remain smooth. This leads us to a definition of an ambipolar hyperkähler manifold which generalizes the recently-defined notion of a `folded' hyperkähler manifold. We prove that such manifolds can be constructed from `initial' data prescribed on the hypersurface. We present an `initial value' construction of supersymmetric solutions of 5d supergravity, in which such solutions are determined by data prescribed on a timelike hypersurface, both for the generic case and for the case of an evanescent ergosurface.

  8. Ambipolar organic field-effect transistors on unconventional substrates

    NASA Astrophysics Data System (ADS)

    Cosseddu, P.; Mattana, G.; Orgiu, E.; Bonfiglio, A.

    2009-04-01

    In this paper we report on the realization of flexible all-organic ambipolar field-effect transistors (FETs) realized on unconventional substrates, such as plastic films and textile yarns. A double layer pentacene-C60 heterojunction was used as the semiconductor layer. The contacts were made with poly(ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and patterned by means of soft lithography microcontact printing (μCP). Very interestingly growing C60 on a predeposited pentacene buffer layer leads to a clear improvement in the morphology and crystallinity of the film so it obtains n-type conduction despite the very high electron injection barrier at the interface between PEDOT:PSS and C60. As a result, it was possible to obtain all-organic ambipolar FETs and to optimize their electrical properties by tuning the thicknesses of the two employed active layers. Moreover, it will be shown that modifying the triple interface between dielectric/semiconductor/electrodes is a crucial point for optimizing and balancing injection and transport of both kinds of charge carriers. In particular, we demonstrate that using a middle contact configuration in which source and drain electrodes are sandwiched between pentacene and C60 layers allows significantly improving the electrical performance in planar ambipolar devices. These findings are very important because they pave the way for the realization of low-cost, fully flexible and stretchable organic complementary circuits for smart wearable and textile electronics applications.

  9. Graphene Ambipolar Nanoelectronics for High Noise Rejection Amplification.

    PubMed

    Liu, Che-Hung; Chen, Qi; Liu, Chang-Hua; Zhong, Zhaohui

    2016-02-10

    In a modern wireless communication system, signal amplification is critical for overcoming losses during multiple data transformations/processes and long-distance transmission. Common mode and differential mode are two fundamental amplification mechanisms, and they utilize totally different circuit configurations. In this paper, we report a new type of dual-gate graphene ambipolar device with capability of operating under both common and differential modes to realize signal amplification. The signal goes through two stages of modulation where the phase of signal can be individually modulated to be either in-phase or out-of-phase at two stages by exploiting the ambipolarity of graphene. As a result, both common and differential mode amplifications can be achieved within one single device, which is not possible in the conventional circuit configuration. In addition, a common-mode rejection ratio as high as 80 dB can be achieved, making it possible for low noise circuit application. These results open up new directions of graphene-based ambipolar electronics that greatly simplify the RF circuit complexity and the design of multifunction device operation. PMID:26808093

  10. Ambipolar transistors based on random networks of WS2 nanotubes

    NASA Astrophysics Data System (ADS)

    Sugahara, Mitsunari; Kawai, Hideki; Yomogida, Yohei; Maniwa, Yutaka; Okada, Susumu; Yanagi, Kazuhiro

    2016-07-01

    WS2 nanotubes are rolled multiwalled nanotubes made of a layered material, tungsten disulfide. Their fibril structures enable the fabrication of random network films; however, these films are nonconducting, and thus have not been used for electronic applications. Here, we demonstrate that carrier injection into WS2 networks using an electrolyte gating approach could cause these networks to act as semiconducting channels. We clarify the Raman characteristics of WS2 nanotubes under electrolyte gating and confirm the feasibility of the injection of electrons and holes. We reveal ambipolar behaviors of the WS2 nanotube networks in field-effect transistor setups with electrolyte gating.

  11. Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

    SciTech Connect

    Chen, J. C. H. Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Das Gupta, K.; Sfigakis, F.; Ritchie, D. A.; Trunov, K.; Wieck, A. D.; Reuter, D.

    2015-05-04

    We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility Al{sub 0.34}Ga{sub 0.66}As/GaAs heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses.

  12. Ambipolarity in a tokamak with magnetic field ripple

    NASA Astrophysics Data System (ADS)

    Hazeltine, R. D.

    2016-08-01

    In view of the recognized importance of electrostatic fields regarding turbulent transport, the radial electric field in a tokamak with magnetic field ripple is reconsidered. Terms in the ambipolarity condition involving the radial derivative of the field are derived from an extended drift-kinetic equation, including effects of second order in the gyroradius. Such terms are of interest in part because of their known importance in rotational relaxation equations for the axisymmetric case. The electric field is found to satisfy a nonlinear differential equation that is universal in a certain sense, and that implies spatial relaxation of the potential to its conventionally predicted value.

  13. Entropy production determination of the ambipolar solution nearest equilibrium. Revision

    SciTech Connect

    Catto, P.J.; Myra, J.R.

    1985-05-01

    A general derivation of the steady state entropy production equation is presented for a confined plasma which loses particles and energy via radial transport and, perhaps, end loss. The resulting equation is employed to determine which root or solution at each pressure surface is closest to local thermodynamic equilibrium when more than one self-consistent or ambipolar solution is possible. The solution closest to local thermodynamic equilibrium is presumed to be the one with the smallest total collisional entropy production rate. This solution makes the distribution functions as close to local Maxwellians as possible.

  14. A Highly Sensitive Diketopyrrolopyrrole-Based Ambipolar Transistor for Selective Detection and Discrimination of Xylene Isomers.

    PubMed

    Wang, Bin; Huynh, Tan-Phat; Wu, Weiwei; Hayek, Naseem; Do, Thu Trang; Cancilla, John C; Torrecilla, Jose S; Nahid, Masrur Morshed; Colwell, John M; Gazit, Oz M; Puniredd, Sreenivasa Reddy; McNeill, Christopher R; Sonar, Prashant; Haick, Hossam

    2016-06-01

    An ambipolar poly(diketopyrrolopyrrole-terthiophene)-based field-effect transistor (FET) sensitively detects xylene isomers at low ppm levels with multiple sensing features. Combined with pattern-recognition algorithms, a sole ambipolar FET sensor, rather than arrays of sensors, can discriminate highly similar xylene structural isomers from one another. PMID:26996398

  15. Observation and interpretation of energy efficient, diffuse direct current glow discharge at atmospheric pressure

    SciTech Connect

    Tang, Jie Jiang, Weiman; Wang, Yishan; Zhao, Wei; Li, Jing; Duan, Yixiang

    2015-08-24

    A diffuse direct-current glow discharge was realized with low energy consumption and high energy utilization efficiency at atmospheric pressure. The formation of diffuse discharge was demonstrated by examining and comparing the electrical properties and optical emissions of plasmas. In combination with theoretical derivation and calculation, we draw guidelines that appearance of nitrogen ions at low electron density is crucial to enhance the ambipolar diffusion for the expansion of discharge channel and the increasing ambipolar diffusion near the cathode plays a key role in the onset of diffuse discharge. An individual-discharge-channel expansion model is proposed to explain the diffuse discharge formation.

  16. Observation and interpretation of energy efficient, diffuse direct current glow discharge at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    Tang, Jie; Jiang, Weiman; Li, Jing; Wang, Yishan; Zhao, Wei; Duan, Yixiang

    2015-08-01

    A diffuse direct-current glow discharge was realized with low energy consumption and high energy utilization efficiency at atmospheric pressure. The formation of diffuse discharge was demonstrated by examining and comparing the electrical properties and optical emissions of plasmas. In combination with theoretical derivation and calculation, we draw guidelines that appearance of nitrogen ions at low electron density is crucial to enhance the ambipolar diffusion for the expansion of discharge channel and the increasing ambipolar diffusion near the cathode plays a key role in the onset of diffuse discharge. An individual-discharge-channel expansion model is proposed to explain the diffuse discharge formation.

  17. Current-density fluctuations and ambipolarity of transport

    SciTech Connect

    Shen, W.; Dexter, R.N.; Prager, S.C. )

    1992-03-02

    The fluctuation in the plasma current density is measured in the MST reversed-field-pinch experiment. Such fluctuations, ad the measured radial profile of the {ital k} spectrum of magnetic fluctuations, support the view that low-frequency fluctuations ({ital f}{lt}30 kHz) are tearing modes and high-frequency fluctuations (30 kHz{lt}{ital f}{lt}250 kHz) are localized turbulence in resonance with the local equilibrium magnetic field (i.e., {bold k}{center dot}{bold B}=0). Correlation of current-density and magnetic fluctuations ({l angle}{ital {tilde j}}{sub {parallel}}{ital {tilde B}{ital r}}{r angle}) demonstrates that radial particle transport from particle motion parallel to a fluctuating magnetic field is ambipolar over the full frequency range.

  18. Internal electron transport barrier due to neoclassical ambipolarity in the Helically Symmetric Experiment

    SciTech Connect

    Lore, J.; Guttenfelder, Walter; Briesemeister, Alexis; Anderson, David; Anderson, F. S.B.; Deng, C. B.; Likin, K.; Spong, Donald A; Talmadge, Joseph; Zhai, Kan

    2010-01-01

    Electron cyclotron heated plasmas in the Helically Symmetric Experiment (HSX) feature strongly peaked electron temperature profiles; central temperatures are 2.5 keV with 100 kW injected power. These measurements, coupled with neoclassical predictions of large 'electron root' radial electric fields with strong radial shear, are evidence of a neoclassically driven thermal transport barrier. Neoclassical transport quantities are calculated using the PENTA code [D. A. Spong, Phys. Plasmas 12, 056114 (2005)], in which momentum is conserved and parallel flow is included. Unlike a conventional stellarator, which exhibits strong flow damping in all directions on a flux surface, quasisymmetric stellarators are free to rotate in the direction of symmetry, and the effect of momentum conservation in neoclassical calculations may therefore be significant. Momentum conservation is shown to modify the neoclassical ion flux and ambipolar ion root radial electric fields in the quasisymmetric configuration. The effect is much smaller in a HSX configuration where the symmetry is spoiled. In addition to neoclassical transport, a model of trapped electron mode turbulence is used to calculate the turbulent-driven electron thermal diffusivity. Turbulent transport quenching due to the neoclassically predicted radial electric field profile is needed in predictive transport simulations to reproduce the peaking of the measured electron temperature profile [Guttenfelder et al., Phys. Rev. Lett. 101, 215002 (2008)].

  19. Evolution of views on the structure of the ambipolar electric field in toroidal magnetic confinement systems

    SciTech Connect

    Kovrizhnykh, L. M.

    2015-12-15

    Various methods of determining the ambipolar electric field in toroidal magnetic systems (predominantly, in stellarators) and the evolution of views on this problem are discussed. Paradoxes encountered in solving this problem are analyzed, and ways of resolving them are proposed.

  20. Absence of carrier separation in ambipolar charge and spin drift in p{sup +}-GaAs

    SciTech Connect

    Cadiz, F.; Paget, D.; Rowe, A. C. H.; Martinelli, L.; Arscott, S.

    2015-10-19

    The electric field-induced modifications of the spatial distribution of photoelectrons, photoholes, and electronic spins in optically pumped p{sup +} GaAs are investigated using a polarized luminescence imaging microscopy. At low pump intensity, application of an electric field reveals the tail of charge and spin density of drifting electrons. These tails disappear when the pump intensity is increased since a slight differential drift of photoelectrons and photoholes causes the buildup of a strong internal electric field. Spatial separation of photoholes and photoelectrons is very weak so that photoholes drift in the same direction as photoelectrons, thus exhibiting a negative effective mobility. In contrast, for a zero electric field, no significant ambipolar diffusive effects are found in the same sample.

  1. Observation of electron behavior in ambipolar polymer-based light-emitting transistor by optical second harmonic generation

    NASA Astrophysics Data System (ADS)

    Ohshima, Yuki; Lim, Eunju; Manaka, Takaaki; Iwamoto, Mitsumasa; Sirringhaus, Henning

    2011-07-01

    By using the optical second harmonic generation (SHG) measurement, we directly visualized the carrier behavior leading to carrier recombination and electroluminescence (EL) in ambipolar polymer-based organic light-emitting transistor (OLET) with an active layer of poly 9,9-di-n-octylfluorene-alt-benzothiadiszole (F8BT). Eliminating photoluminescence generated at 560 nm by a two-photon absorption process, the dynamical carrier motion in the F8BT-OLET was visualized by the electric field induced SHG induced at 420 nm. Diffusion-like electron transport that starts from the drain electrode was directly caught as the transits of the SHG images. Accordingly, EL was obtained at the edge of the source electrode. The electron mobility was estimated from the visualized carrier motion as 9.2×10-4cm2/Vs, which was larger than that obtained from the transfer curve of the OLET.

  2. Single-charge transport in ambipolar silicon nanoscale field-effect transistors

    SciTech Connect

    Mueller, Filipp; Konstantaras, Georgios; Wiel, Wilfred G. van der; Zwanenburg, Floris A.

    2015-04-27

    We report single-charge transport in ambipolar nanoscale MOSFETs, electrostatically defined in near-intrinsic silicon. We use the ambipolarity to demonstrate the confinement of either a few electrons or a few holes in exactly the same crystalline environment underneath a gate electrode. We find similar electron and hole quantum dot properties while the mobilities differ quantitatively like in microscale devices. The understanding and control of individual electrons and holes are essential for spin-based quantum information processing.

  3. Ambipolar radial electric field generated by anomalous transport induced by magnetic perturbations

    NASA Astrophysics Data System (ADS)

    Chen, Dunqiang; Zhu, Siqiang; Zhang, Debing; Wang, Shaojie

    2016-05-01

    The anomalous particle transport induced by magnetic perturbations in a tokamak is investigated. The correlation between the radial position and the kinetic energy of electrons, Dr K=-e ErDr r , is predicted theoretically and is verified by simulations in the presence of a mean radial electric field. This correlation leads to a radial particle flux produced by the radial electric field. The ambipolar radial electric field can thus be predicted by using the ambipolarity condition Γri=Γre .

  4. Electron and hole transport in ambipolar, thin film pentacene transistors

    SciTech Connect

    Saudari, Sangameshwar R.; Kagan, Cherie R.

    2015-01-21

    Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.

  5. Regulating charge injection in ambipolar organic field-effect transistors by mixed self-assembled monolayers.

    PubMed

    Xu, Yong; Baeg, Kang-Jun; Park, Won-Tae; Cho, Ara; Choi, Eun-Young; Noh, Yong-Young

    2014-08-27

    We report on a technique using mixed self-assembled monolayers (SAMs) to finely regulate ambipolar charge injection in polymer organic field-effect transistors. Differing from the other works that employ single SAM specifically for efficient charge injection in p-type and n-type transistors, we blend two different SAMs of alkyl- and perfluoroalkyl thiols at different ratios and apply them to ambipolar OFETs and inverter. Thanks to the utilization of ambipolar semiconductor and one SAM mixture, the device and circuit fabrications are facile with only one step for semiconductor deposition and another for SAM treatment. This is much simpler with respect to the conventional scheme for the unipolar-device-based complementary circuitry that demands separate deposition and processing for individual p-channel and n-channel transistors. Our results show that the mixed-SAM treatments not only improve ambipolar charge injection manifesting as higher hole- and electron-mobility and smaller threshold voltage but also gradually tune the device characteristics to reach a desired condition for circuit application. Therefore, this simple but useful approach is promising for ambipolar electronics. PMID:25093699

  6. Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

    NASA Astrophysics Data System (ADS)

    Kim, Bongjun; Liang, Kelly; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2016-07-01

    We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.

  7. Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C{sub 60} and fabrication of logic gates

    SciTech Connect

    Park, Steve; Nam, Ji Hyun; Koo, Ja Hoon; Lei, Ting; Bao, Zhenan

    2015-03-09

    We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C{sub 60} on top. The addition of C{sub 60} was observed to have two effects in enhancing ambipolar characteristics. First, C{sub 60} served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C{sub 60} itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C{sub 60} ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates.

  8. Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism

    PubMed Central

    Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Roy, V. A. L.

    2013-01-01

    The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics. PMID:23900459

  9. Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.

    PubMed

    Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Roy, V A L

    2013-01-01

    The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics. PMID:23900459

  10. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    SciTech Connect

    Han, Jinhua; Wang, Wei Ying, Jun; Xie, Wenfa

    2014-01-06

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

  11. Low threshold amplified spontaneous emission and ambipolar charge transport in non-volatile liquid fluorene derivatives.

    PubMed

    Ribierre, Jean-Charles; Zhao, Li; Inoue, Munetomo; Schwartz, Pierre-Olivier; Kim, Ju-Hyung; Yoshida, Kou; Sandanayaka, Atula S D; Nakanotani, Hajime; Mager, Loic; Méry, Stéphane; Adachi, Chihaya

    2016-02-21

    Highly fluorescent non-volatile fluidic fluorene derivatives functionalized with siloxane chains were synthesized and used in monolithic solvent-free liquid organic semiconductor distributed feedback lasers. The photoluminescence quantum yield values, the amplified spontaneous emission thresholds and the ambipolar charge carrier mobilities demonstrate that this class of materials is extremely promising for organic fluidic light-emitting and lasing devices. PMID:26734693

  12. High-mobility ambipolar ZnO-graphene hybrid thin film transistors

    PubMed Central

    Song, Wooseok; Kwon, Soon Yeol; Myung, Sung; Jung, Min Wook; Kim, Seong Jun; Min, Bok Ki; Kang, Min-A; Kim, Sung Ho; Lim, Jongsun; An, Ki-Seok

    2014-01-01

    In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm2/V·s, and a high on-off ratio of 105. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs. PMID:24513629

  13. Anomalous ion heating from ambipolar-constrained magnetic fluctuation-induced transport

    SciTech Connect

    Gatto, R.; Terry, P. W.

    2001-01-01

    A kinetic theory for the anomalous heating of ions from energy stored in magnetic turbulence is presented. Imposing self consistency through the constitutive relations between particle distributions and fields, a turbulent Kirchhoff's law is derived that expresses a direct connection between rates of ion heating and electron thermal transport. This connection arises from the kinematics of electron motion along turbulent fields, which results in granular structures in the electron distribution. The drag exerted on these structures through emission into collective modes mediates ambipolar-constrained transport. Resonant damping of the collective modes by ions produces the heating. In collisionless plasmas the rate of ion damping controls the rate of emission, and hence the ambipolar-constrained electron heat flux. The heating rate is calculated for both a resonant and non-resonant magnetic fluctuation spectrum and compared with observations. The theoretical heating rate is sufficient to account for the observed two-fold rise in ion temperature during sawtooth events in experimental discharges.

  14. Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

    SciTech Connect

    Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth; Geier, Michael L.; Prabhumirashi, Pradyumna L.; Hersam, Mark C.

    2014-02-10

    We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm{sup 2} V{sup −1} s{sup −1} at low operating voltages (<5 V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

  15. Spatial control of the recombination zone in ambipolar light-emitting polymer transistors

    NASA Astrophysics Data System (ADS)

    Zaumseil, Jana; Donley, Carrie L.; Kim, Ji-Seon; Friend, Richard H.; Sirringhaus, Henning

    2006-04-01

    Ambipolar organic field-effect transistors (FET) are interesting as building blocks for low power complementary circuits in organic electronics. Another intriguing feature of ambipolar FETs is the recombination of holes and electrons within the channel, which leads to the formation of excitons that can relax radiatively and thus emit light. We have recently demonstrated that ambipolar charge transport is a generic feature in a wide range of polymer semiconductors when appropriate injection electrodes and trapfree dielectrics are used. Among these materials are those that are generally used in light-emitting diodes and thus show high photoluminescence efficiencies. Here we demonstrate ambipolar light-emitting field-effect transistors based on the conjugated polymer OC IC 10-PPV (poly(2-methoxy-5-(3,7-dimethyloctoxy)-p-phenylenevinylene)) as the semiconducting and emissive layer. OC IC 10- PPV shows efficient electron and hole transport with field-effect mobilities of 3.10 -3 cm2/Vs and 6.10 -4 cm2/Vs, respectively. Electrons and holes are injected from calcium and gold source and drain electrodes, respectively, and recombine radiatively within the transistor channel leading to visible light emission. We can actively control the position of the recombination zone through the applied gate and source-drain bias in both constant and variable current mode and thus move the emission zone from the source through the channel to the drain electrode and vice versa. The intensity of light emitted from the channel is proportional to the drain current with efficiencies comparable to those of LEDs based on OC IC 10-PPV.

  16. Study on contact and channel resistance of pentacene-based ambipolar organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Ho, Tsung-Jun; Yan, Guo-En; Cheng, Horng-Long

    2015-08-01

    In this work, we investigated the electrical characteristics of pentacene-based ambipolar organic thin-film transistors (OTFTs) by modifying the channel length. We fabricated a top contact device structure with sliver as the source and drain electrodes and heavy doped p-type silicon wafer as the gate electrode. The channel length of the pentacene-based ambipolar OTFTs are 50, 100, 250, and 400 μm; the channel width is fixed. The output current of the n-channel and p-channel decreases with increasing channel length. The saturated mobility and threshold voltage of both channels increase with the increase in channel length. The increase rate of saturated mobility and threshold voltage of the n-channel is larger than that of the p-channel. The influence of channel length on the electrical properties of the p-channel and n-channel is different. We utilized the gated-transfer length method to study the contact resistance between sliver and pentacene and the channel resistance of pentacene. Contact and channel resistance decrease with the increase in gate voltage in the saturation region. The total resistance of pentacene-based ambipolar OTFTs increases with channel length at a fixed gate voltage. However, n-channel total resistance has stronger gate voltage and channel length dependence than p-channel total resistance. This result reveals that electron transport in the device channel requires a larger driving voltage than in the hole. Selecting a suitable channel length is critical to obtain a well-balanced performance of the dual carriers that transport ambipolar OTFTs and to avoid a large loss in injection barrier.

  17. Indigo--a natural pigment for high performance ambipolar organic field effect transistors and circuits.

    PubMed

    Irimia-Vladu, Mihai; Głowacki, Eric D; Troshin, Pavel A; Schwabegger, Günther; Leonat, Lucia; Susarova, Diana K; Krystal, Olga; Ullah, Mujeeb; Kanbur, Yasin; Bodea, Marius A; Razumov, Vladimir F; Sitter, Helmut; Bauer, Siegfried; Sariciftci, Niyazi Serdar

    2012-01-17

    Millenniums-old natural dye indigo--a "new" ambipolar organic semiconductor. Indigo shows balanced electron and hole mobilities of 1 × 10(-2) cm(2) V(-1) s(-1) and good stability against degradation in air. Inverters with gains of 105 in the first and 110 in the third quadrant are demonstrated. Fabricated entirely from natural and biodegradable compounds, these devices show the large potential of such materials for green organic electronics. PMID:22109816

  18. Solution-Processed Ambipolar Field-Effect Transistor Based on Diketopyrrolopyrrole Functionalized with Benzothiadiazole

    SciTech Connect

    Zhang, Yuan; Kim, Chunki; Lin, Jason; Nguyen, Thuc-Quyen

    2012-01-01

    Ambipolar charge transport in a solution-processed small molecule 4,7-bis{2-[2,5-bis(2-ethylhexyl)-3-(5-hexyl-2,2':5',2"-terthiophene-5"-yl)-pyrrolo[3,4-c]pyrrolo-1,4-dione-6-yl]-thiophene-5-yl}-2,1,3-benzothiadiazole (BTDPP2) transistor has been investigated and shows a balanced field-effect mobility of electrons and holes of up to ~10-2 cm² V-1 s-1. Using low-work-function top electrodes such as Ba, the electron injection barrier is largely reduced. The observed ambipolar transport can be enhanced over one order of magnitude compared to devices using Al or Au electrodes. The field-effect mobility increases upon thermal annealing at 150 °C due to the formation of large crystalline domains, as shown by atomic force microscopy and X-ray diffraction. Organic inverter circuits based on BTDPP2 ambipolar transistors display a gain of over 25.

  19. Efficient and Hysteresis-Free Field Effect Modulation of Ambipolarly Doped Vanadium Dioxide Nanowires

    NASA Astrophysics Data System (ADS)

    Peng, Xingyue; Yang, Yiming; Hou, Yasen; Travaglini, Henry C.; Hellwig, Luke; Hihath, Sahar; van Benthem, Klaus; Lee, Kathleen; Liu, Weifeng; Yu, Dong

    2016-05-01

    The subpicosecond metal-insulator phase transition in vanadium dioxide (VO2 ) has attracted extensive attention with potential applications in ultrafast Mott transistors, which are based on electric-field-induced phase transition. However, the development of VO2 -based transistors lags behind, owing to inefficient and hysteretic gate modulation. Here we report ambipolar doping and strong field effects free of hysteresis in single-crystal VO2 nanowires synthesized via catalyst-free chemical vapor deposition. The ambipolarly doped VO2 nanowires are achieved by controlling the oxygen vacancy density during the synthesis and show strong gate effects because of their relatively low doping level. Both the doping type of the nanowires and the band-bending direction at the metal-insulator domain walls are reversibly switched by electrochemical gating, as revealed by scanning photocurrent microscopy. Furthermore, we eliminate the hysteresis in gate sweep via a hybrid gating method, which combines the merits of liquid-ionic and solid gating. The capability of efficient field effect modulation of ambipolar conduction and band alignment offers opportunities on understanding the phase transition mechanism and enables electronic applications based on VO2 .

  20. Laterally-stacked, solution-processed organic microcrystal with ambipolar charge transport behavior.

    PubMed

    Shim, Hyunseok; Kumar, Amit; Cho, Hyejin; Yang, Dongmyung; Palai, Akshaya K; Pyo, Seungmoon

    2014-10-22

    We report the formation of laterally stacked ambipolar crystal wire for high-mobility organic field-effect transistors (OFETs), along with a simple logic circuit through a solution process. A soluble pentacene derivative, 6,13-bis(triisopropylsilylethynyl)pentacene (Tips-pentacene), and N,N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) were used as p-type and n-type organic semiconductors, respectively. The laterally stacked ambipolar crystal wire is made up of Tips-pentacene and PTCDI-C8 crystals in a structure of Tips-pentacene/PTCDI-C8/Tips-pentacene (TPT). The inner part of the crystal is made up of PTCDI-C8, and Tips-pentacene is present on both sides. These TPT crystals exhibit typical ambipolar charge transport behavior in organic electronic devices, which show very balanced hole and electron mobility as high as 0.23 cm(2)/V·s and 0.13 cm(2)/V·s, respectively. Static and dynamic operational stability of the device is investigated by measuring the device performance as a function of storage time and applying voltage pulse, respectively, and it shows good air stability. In addition, a simple logic circuit based on the TPT crystal wire has been fabricated, and the static and dynamic performance has been evaluated. The results indicate that the TPT crystals are potentially useful for miniaturized organic electronic devices. PMID:25244525

  1. Fingerprints of collisionless reconnection at the separator, I, Ambipolar-Hall signatures

    NASA Astrophysics Data System (ADS)

    Scudder, J. D.; Mozer, F. S.; Maynard, N. C.; Russell, C. T.

    2002-10-01

    Plasma, electric, and magnetic field data on the Polar spacecraft have been analyzed for the 29 May 1996 magnetopause traversal searching for evidence of in situ reconnection and traversal of the separator. In this paper we confine our analysis to model-free observations and intrasensor coherence of detection of the environs of the separator. (1) We illustrate the first documented penetration of the separator of collisionless magnetic reconnection in temporal proximity to successful Walén tests with opposite slopes. (2) We present the first direct measurements of E∥ at the magnetopause. (3) We make the first empirical argument that E∥ derives from the electron pressure gradient force. (4) We document the first detection of the electron pressure ridge astride the magnetic depression that extends from the separator. (5) We provide the first empirical detection of the reconnection rate at the magnetopause with the locally sub-Alfvénic ion inflow, MAi ≃ 0.1, and trans-Alfvénic exhaust at high electron pressure of MiA ≃ 1.1-5. (6) We exhibit the first empirical detection of supra-Alfvénic electron flows parallel to B in excess of 5 in narrow sheets. (7) We illustrate the detection of heat flux sheets indicative of separatrices near, but not always in superposition, with the supra-Alfvénic parallel electron bulk flows. (8) We present the first evidence that pressure gradient scales are short enough to explain the electron fluid's measured cross-field drifts not explained by E × B drift but predicted by the measured size of E∥. (9) We illustrate that the size of the observed E∥ is well organized with the limit implied by Vasyliunas's analysis of the generalized Ohm's law of scale length ?, indicative of the intermediate scale of the diffusion region. (10) We document the first detection of departure from electron gyrotropy not only at the separator crossing but also in its vicinity, an effect presaged by [1975]. (11) We make the first reports of very

  2. Balanced Ambipolar Poly(diketopyrrolopyrrole-alt-tetrafluorobenzene) Semiconducting Polymers Synthesized via Direct Arylation Polymerization.

    PubMed

    Wang, Kai; Wang, Guojie; Wang, Mingfeng

    2015-12-01

    The synthesis of an ambipolar π-conjugated copolymer consisting of alternating diketopyrrolopyrrole and tetrafluorobenzene via direct arylation polymerization (DAP) is reported. Two different combinations of monomers are investigated under various catalytic conditions for DAP. The target polymer obtained under an optimized catalytic condition shows minimal structural defects, a number-average molecular weight of 33.2 kDa, and balanced electron and hole mobility of 1 × 10(-2) cm(2) V(-1) S(-1) in the organic field-effect transistors fabricated and tested under ambient conditions. PMID:26421942

  3. Effect of Electronic Acceptor Segments on Photophysical Properties of Low-Band-Gap Ambipolar Polymers

    PubMed Central

    Li, Yuanzuo; Cui, Jingang; Zhao, Jianing; Liu, Jinglin; Song, Peng; Ma, Fengcai

    2013-01-01

    Stimulated by a recent experimental report, charge transfer and photophysical properties of donor-acceptor ambipolar polymer were studied with the quantum chemistry calculation and the developed 3D charge difference density method. The effects of electronic acceptor strength on the structure, energy levels, electron density distribution, ionization potentials, and electron affinities were also obtained to estimate the transporting ability of hole and electron. With the developed 3D charge difference density, one visualizes the charge transfer process, distinguishes the role of molecular units, and finds the relationship between the role of DPP and excitation energy for the three polymers during photo-excitation. PMID:23365549

  4. High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits

    NASA Astrophysics Data System (ADS)

    Liang, Yiran; Liang, Xuelei; Zhang, Zhiyong; Li, Wei; Huo, Xiaoye; Peng, Lianmao

    2015-06-01

    Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene. High current density (nearly 200 μA μm-1) with saturation, almost perfect ambipolar electron-hole behavior, high transconductance (120 μS μm-1) and good stability over 381 days were obtained. The average carrier mobility for holes (electrons) is 13 540 cm2 V-1 s-1 (12 300 cm2 V-1 s-1) with the highest value over 24 000 cm2 V-1 s-1 (20 000 cm2 V-1 s-1) obtained in flexible GFETs. Ambipolar radio-frequency circuits, frequency doubler, were constructed based on the high performed flexible GFET, which show record high output power spectra purity (~97%) and high conversion gain of -13.6 dB. Bending measurements show the flexible GFETs are able to work under modest strain. These results show that flexible GFETs are a very promising option for future flexible radio-frequency electronics.Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene. High current density (nearly 200 μA μm-1) with saturation, almost perfect ambipolar electron-hole behavior, high transconductance (120 μS μm-1) and good stability over 381 days were obtained. The average carrier mobility for holes (electrons) is 13 540 cm2 V-1 s-1 (12 300 cm2 V-1 s-1) with the highest value over 24 000 cm2 V-1 s-1 (20 000 cm2 V-1 s-1) obtained in flexible GFETs. Ambipolar radio-frequency circuits, frequency doubler, were constructed based on the high performed flexible GFET, which show record high output power spectra purity (~97%) and high conversion gain of -13.6 dB. Bending measurements show the flexible GFETs are able to work under modest strain. These results show that flexible GFETs are a very promising option for future flexible radio-frequency electronics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02292d

  5. o-Carborane functionalized pentacenes: synthesis, molecular packing and ambipolar organic thin-film transistors.

    PubMed

    Guo, Jixi; Liu, Danqing; Zhang, Jiahui; Zhang, Jiji; Miao, Qian; Xie, Zuowei

    2015-08-01

    New 6,13-bis[1'-(C≡C)-2'-R-1',2'-C2B10H10]pentacenes (R = H, Me, Et, n-Bu) are synthesized and fully characterized. The results show that the alkyl substituents on the second cage carbon have a significant impact on the molecular packing, and the incorporation of the o-carboranyl moiety into a π conjugated system can lower both LUMO and HOMO energy levels, converting a typical p-type semiconductor into an ambipolar one. PMID:26121634

  6. Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity

    NASA Astrophysics Data System (ADS)

    Richter, S.; Trellenkamp, S.; Schäfer, A.; Hartmann, J. M.; Bourdelle, K. K.; Zhao, Q. T.; Mantl, S.

    2015-06-01

    Complementary MOSFET and Tunnel-FET inverters based on tri-gated strained Si nanowire arrays are demonstrated. The voltage transfer characteristics as well as the inverter supply currents of both inverter types are analyzed and compared. A degradation of the inverter output voltage is observed due to the ambipolar transfer characteristics of the symmetric homostructure TFET devices. Emulated TFET inverters based on the measured transfer characteristics of SiGe/Si heterostructure nanowire array n-channel TFETs with reduced ambipolarity demonstrate improved inverter switching for supply voltages down to VDD = 0.2 V.

  7. Effect of Ambipolar Plasma Flow on the Penetration of Resonant Magnetic Perturbations in a Quasi-axisymmetric Stellarator

    SciTech Connect

    A. Reiman; M. Zarnstorff; D. Mikkelsen; L. Owen; H. Mynick; S. Hudson; D. Monticello

    2005-04-19

    A reference equilibrium for the U.S. National Compact Stellarator Experiment is predicted to be sufficiently close to quasi-symmetry to allow the plasma to flow in the toroidal direction with little viscous damping, yet to have sufficiently large deviations from quasi-symmetry that nonambipolarity significantly affects the physics of the shielding of resonant magnetic perturbations by plasma flow. The unperturbed velocity profile is modified by the presence of an ambipolar potential, which produces a broad velocity profile. In the presence of a resonant magnetic field perturbation, nonambipolar transport produces a radial current, and the resulting j x B force resists departures from the ambipolar velocity and enhances the shielding.

  8. Hydrodynamic theory of diffusion in two-temperature multicomponent plasmas

    SciTech Connect

    Ramshaw, J.D.; Chang, C.H.

    1995-12-31

    Detailed numerical simulations of multicomponent plasmas require tractable expressions for species diffusion fluxes, which must be consistent with the given plasma current density J{sub q} to preserve local charge neutrality. The common situation in which J{sub q} = 0 is referred to as ambipolar diffusion. The use of formal kinetic theory in this context leads to results of formidable complexity. We derive simple tractable approximations for the diffusion fluxes in two-temperature multicomponent plasmas by means of a generalization of the hydrodynamical approach used by Maxwell, Stefan, Furry, and Williams. The resulting diffusion fluxes obey generalized Stefan-Maxwell equations that contain driving forces corresponding to ordinary, forced, pressure, and thermal diffusion. The ordinary diffusion fluxes are driven by gradients in pressure fractions rather than mole fractions. Simplifications due to the small electron mass are systematically exploited and lead to a general expression for the ambipolar electric field in the limit of infinite electrical conductivity. We present a self-consistent effective binary diffusion approximation for the diffusion fluxes. This approximation is well suited to numerical implementation and is currently in use in our LAVA computer code for simulating multicomponent thermal plasmas. Applications to date include a successful simulation of demixing effects in an argon-helium plasma jet, for which selected computational results are presented. Generalizations of the diffusion theory to finite electrical conductivity and nonzero magnetic field are currently in progress.

  9. Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS₂.

    PubMed

    Ponomarev, Evgeniy; Gutiérrez-Lezama, Ignacio; Ubrig, Nicolas; Morpurgo, Alberto F

    2015-12-01

    We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on exfoliated flakes. FETs on CVD-grown material, however, exhibit clear ambipolar transport, which for MoS2 monolayers had not been reported previously. We exploit this property to estimate the bandgap Δ of monolayer MoS2 directly from the device transfer curves and find Δ ≈ 2.4-2.7 eV. In the ambipolar injection regime, we observe electroluminescence due to exciton recombination in MoS2, originating from the region close to the hole-injecting contact. Both the observed transport properties and the behavior of the electroluminescence can be consistently understood as due to the presence of defect states at an energy of 250-300 meV above the top of the valence band, acting as deep traps for holes. Our results are of technological relevance, as they show that devices with useful optoelectronic functionality can be realized on large-area MoS2 monolayers produced by controllable and scalable techniques. PMID:26594892

  10. High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits.

    PubMed

    Liang, Yiran; Liang, Xuelei; Zhang, Zhiyong; Li, Wei; Huo, Xiaoye; Peng, Lianmao

    2015-07-01

    Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene. High current density (nearly 200 μA μm(-1)) with saturation, almost perfect ambipolar electron-hole behavior, high transconductance (120 μS μm(-1)) and good stability over 381 days were obtained. The average carrier mobility for holes (electrons) is 13,540 cm(2) V(-1) s(-1) (12,300 cm(2) V(-1) s(-1)) with the highest value over 24,000 cm(2) V(-1) s(-1) (20,000 cm(2) V(-1) s(-1)) obtained in flexible GFETs. Ambipolar radio-frequency circuits, frequency doubler, were constructed based on the high performed flexible GFET, which show record high output power spectra purity (∼97%) and high conversion gain of -13.6 dB. Bending measurements show the flexible GFETs are able to work under modest strain. These results show that flexible GFETs are a very promising option for future flexible radio-frequency electronics. PMID:26061485

  11. Polymer-sorted semiconducting carbon nanotube networks for high-performance ambipolar field-effect transistors.

    PubMed

    Schiessl, Stefan P; Fröhlich, Nils; Held, Martin; Gannott, Florentina; Schweiger, Manuel; Forster, Michael; Scherf, Ullrich; Zaumseil, Jana

    2015-01-14

    Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm(2)·V(-1)·s(-1), low ohmic contact resistance, steep subthreshold swings (0.12-0.14 V/dec) and high on/off ratios (10(6)) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

  12. Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

    PubMed Central

    2014-01-01

    Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

  13. Efficient ambipolar transport properties in alternate stacking donor-acceptor complexes: from experiment to theory.

    PubMed

    Qin, Yunke; Cheng, Changli; Geng, Hua; Wang, Chao; Hu, Wenping; Xu, Wei; Shuai, Zhigang; Zhu, Daoben

    2016-05-18

    Comprehensive investigations of crystal structures, electrical transport properties and theoretical simulations have been performed over a series of sulfur-bridged annulene-based donor-acceptor complexes with an alternate stacking motif. A remarkably high mobility, up to 1.57 cm(2) V(-1) s(-1) for holes and 0.47 cm(2) V(-1) s(-1) for electrons, was obtained using organic single crystal field-effect transistor devices, demonstrating the efficient ambipolar transport properties. These ambipolar properties arise from the fact that the electronic couplings for both holes and electrons have the same super-exchange nature along the alternate stacking direction. The magnitude of super-exchange coupling depends not only on the intermolecular stacking distance and pattern, but also the energy level alignments between the adjacent donor-acceptor moieties. The concluded transport mechanism and structure-property relationship from this research will provide an important guideline for the future design of organic semiconductors based on donor-acceptor complexes. PMID:27157854

  14. Ambipolar Electric Field, Photoelectrons, and Their Role in Atmospheric Escape From Hot Jupiters

    NASA Technical Reports Server (NTRS)

    Cohen, O.; Glocer, A.

    2012-01-01

    Atmospheric mass loss from Hot Jupiters can be large due to the close proximity of these planets to their host star and the strong radiation the planetary atmosphere receives. On Earth, a major contribution to the acceleration of atmospheric ions comes from the vertical separation of ions and electrons, and the generation of the ambipolar electric field. This process, known as the "polar wind," is responsible for the transport of ionospheric constituents to Earth's magnetosphere, where they are well observed. The polar wind can also be enhanced by a relatively small fraction of super-thermal electrons (photoelectrons) generated by photoionization.We formulate a simplified calculation of the effect of the ambipolar electric field and the photoelectrons on the ion scale height in a generalized manner. We find that the ion scale height can be increased by a factor of 2-15 due to the polar wind effects. We also estimate a lower limit of an order of magnitude increase of the ion density and the atmospheric mass-loss rate when polar wind effects are included.

  15. Infrared spectroscopy of narrow gap donor-acceptor polymer-based ambipolar transistors

    NASA Astrophysics Data System (ADS)

    Khatib, Omar; Yuen, Jonathan; Wilson, Jim; Kumar, Rajeev; di Ventra, Massimiliano; Heeger, Alan; Basov, Dimitri

    2013-03-01

    Donor-acceptor (D-A) copolymers have recently emerged as versatile materials for use in a large variety of device applications. Specifically, these systems possess extremely narrow band gaps, enabling ambipolar charge transport when integrated in solution-processed organic field-effect transistors (OFETs). However, the fundamentals of electronic transport in this class of materials remain unexplored. We present a systematic investigation of ambipolar charge injection in a family of narrow-gap D-A conjugated polymers based on benzobisthiadiazole (BBT) using infrared (IR) spectroscopy. We observe a significant modification of the absorption edge in polymer-based OFETs under the applied electric field. The absorption edge reveals hardening under electron injection and softening under hole injection. Additionally, we register localized vibrational resonances associated with injected charges. Our findings indicate a significant self-doping of holes that is modified by charge injection. Observations of both electron and hole transport with relatively high carrier mobility strongly suggest an inhomogeneous, phase-separated conducting polymer.

  16. Amphiphilic (Phthalocyaninato) (Porphyrinato) Europium Triple-Decker Nanoribbons with Air-Stable Ambipolar OFET Performance.

    PubMed

    Lu, Guang; Kong, Xia; Ma, Pan; Wang, Kang; Chen, Yanli; Jiang, Jianzhuang

    2016-03-01

    An amphiphilic mixed (phthalocyaninato) (porphyrinato) europium(III) triple-decker complex [Pc(OPh)8]Eu[Pc(OPh)8]Eu[TP(C≡CCOOH)PP] (1) with potential ambipolar semiconducting HOMO and LUMO energy levels has been designed, synthesized, and characterized. The OFET devices fabricated by quasi-Langmuir-Shäfer (QLS) technique at the air/water interface with nanoparticle morphology display hole mobility of 7.0 × 10(-7) cm(2) V(-1) s(-1) and electron mobility of 7.5 × 10(-7) cm(2) V(-1) s(-1), which reflects its ambipolar semiconducting nature. However, the performance of the devices fabricated via a "phase-transfer" method from n-hexane with one-dimensional nanoribbon morphology was significantly improved by 3-6 orders of magnitude in terms of hole and electron mobilities, 0.11 and 4 × 10(-4) cm(2) V(-1) s(-1), due to the enhanced π-π interaction in the direction perpendicular to the tetrapyrrole rings associated with the formation of a dimeric supramolecular structure building block depending on the intermolecular hydrogen bonding between the neighboring triple-decker molecules in the one-dimensional nanoribbons. PMID:26894989

  17. AMBIPOLAR ELECTRIC FIELD, PHOTOELECTRONS, AND THEIR ROLE IN ATMOSPHERIC ESCAPE FROM HOT JUPITERS

    SciTech Connect

    Cohen, O.; Glocer, A.

    2012-07-01

    Atmospheric mass loss from Hot Jupiters can be large due to the close proximity of these planets to their host star and the strong radiation the planetary atmosphere receives. On Earth, a major contribution to the acceleration of atmospheric ions comes from the vertical separation of ions and electrons, and the generation of the ambipolar electric field. This process, known as the 'polar wind', is responsible for the transport of ionospheric constituents to Earth's magnetosphere, where they are well observed. The polar wind can also be enhanced by a relatively small fraction of super-thermal electrons (photoelectrons) generated by photoionization. We formulate a simplified calculation of the effect of the ambipolar electric field and the photoelectrons on the ion scale height in a generalized manner. We find that the ion scale height can be increased by a factor of 2-15 due to the polar wind effects. We also estimate a lower limit of an order of magnitude increase of the ion density and the atmospheric mass-loss rate when polar wind effects are included.

  18. Influence of plasma diffusion losses on dust charge relaxation in discharge afterglow

    SciTech Connect

    Coueedel, L.; Mikikian, M.; Boufendi, L.

    2008-09-07

    The influence of diffusive losses on residual dust charge in a complex plasma afterglow has been investigated. The dust residual charges were simulated based on a model developed to describe complex plasma decay. The experimental and simulated data show that the transition from ambipolar to free diffusion in the decaying plasma plays a significant role in determining the residual dust particle charges. The presence of positively charged dust particles is explained by a broadening of the charge distribution function in the afterglow plasma.

  19. Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy

    NASA Astrophysics Data System (ADS)

    Khatib, O.; Mueller, A. S.; Stinson, H. T.; Yuen, J. D.; Heeger, A. J.; Basov, D. N.

    2014-12-01

    A resurgence in the use of the donor-acceptor approach in synthesizing conjugated polymers has resulted in a family of high-mobility ambipolar systems with exceptionally narrow energy bandgaps below 1 eV. The ability to transport both electrons and holes is critical for device applications such as organic light-emitting diodes and transistors. Infrared spectroscopy offers direct access to the low-energy excitations associated with injected charge carriers. Here we use a diffraction-limited IR microscope to probe the spectroscopic signatures of electron and hole injection in the conduction channel of an organic field-effect transistor based on an ambipolar DA polymer polydiketopyrrolopyrrole-benzobisthiadiazole. We observe distinct polaronic absorptions for both electrons and holes and spatially map the carrier distribution from the source to drain electrodes for both unipolar and ambipolar biasing regimes. For ambipolar device configurations, we observe the spatial evolution of hole-induced to electron-induced polaron absorptions throughout the transport path. Our work provides a platform for combined transport and infrared studies of organic semiconductors on micron length scales relevant to functional devices.

  20. Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes

    NASA Astrophysics Data System (ADS)

    Zhang, Nan; Hu, Yongsheng; Lin, Jie; Li, Yantao; Liu, Xingyuan

    2016-08-01

    A fabrication method for transparent ambipolar organic thin film transistors with transparent Sb2O3/Ag/Sb2O3 (SAS) source and drain electrodes has been developed. A pentacene/N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) bilayer heterojunction is used as the active semiconductor. The electrodes are deposited by room temperature electron beam evaporation. The devices are fabricated without damaging the active layers. The SAS electrodes have high transmittance (82.5%) and low sheet resistance (8 Ω/sq). High performance devices with hole and electron mobilities of 0.3 cm2/V s and 0.027 cm2/V s, respectively, and average visible range transmittance of 72% were obtained. These transistors have potential for transparent logic integrated circuit applications.

  1. Reversible Conversion of Dominant Polarity in Ambipolar Polymer/Graphene Oxide Hybrids

    PubMed Central

    Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Ma, Xinlei; Chen, Jihua; Zheng, Zijian; Roy, V. A. L.

    2015-01-01

    The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits. PMID:25801827

  2. Coexistence of Midgap Antiferromagnetic and Mott States in Undoped, Hole- and Electron-Doped Ambipolar Cuprates

    NASA Astrophysics Data System (ADS)

    Yin, Xinmao; Zeng, Shengwei; Das, Tanmoy; Baskaran, G.; Asmara, Teguh Citra; Santoso, Iman; Yu, Xiaojiang; Diao, Caozheng; Yang, Ping; Breese, Mark B. H.; Venkatesan, T.; Lin, Hsin; Ariando; Rusydi, Andrivo

    2016-05-01

    We report the first observation of the coexistence of a distinct midgap state and a Mott state in undoped and their evolution in electron and hole-doped ambipolar Y0.38 La0.62 (Ba0.82 La0.18 )2Cu3 Oy films using spectroscopic ellipsometry and x-ray absorption spectroscopies at the O K and Cu L3 ,2 edges. Supported by theoretical calculations, the midgap state is shown to originate from antiferromagnetic correlation. Surprisingly, while the magnetic state collapses and its correlation strength weakens with dopings, the Mott state in contrast moves toward a higher energy and its correlation strength increases. Our result provides important clues to the mechanism of electronic correlation strengths and superconductivity in cuprates.

  3. Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids.

    PubMed

    Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Ma, Xinlei; Chen, Jihua; Zheng, Zijian; Roy, V A L

    2015-01-01

    The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits. PMID:25801827

  4. Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs

    NASA Astrophysics Data System (ADS)

    Hutin, L.; Oeflein, R. P.; Borrel, J.; Martinie, S.; Tabone, C.; Le Royer, C.; Vinet, M.

    2016-01-01

    In this paper, we study the ambipolar tunneling signature from the output characteristics of TFETs featuring Si0.8Ge0.2 homojunctions, which we compare to those measured on conventional MOSFETs and Schottky Barrier FETs. The difference with the former is immediate since a single TFET can display a transistor effect under both pull-up (nTFET) and pull-down (pTFET) biasing conditions. This is however a property shared with SBFETs, in which injection occurs via tunneling through a single carrier Schottky Barrier instead of band-to-band tunneling. Without requiring quantitative considerations on the current levels or transfer characteristics, we find that simply performing the same dual ID-VDS electrical tests while voluntarily "swapping" the S/D terminals unequivocally characterizes TFET operation, even compared to asymmetrically doped SBFETs.

  5. Coexistence of Midgap Antiferromagnetic and Mott States in Undoped, Hole- and Electron-Doped Ambipolar Cuprates.

    PubMed

    Yin, Xinmao; Zeng, Shengwei; Das, Tanmoy; Baskaran, G; Asmara, Teguh Citra; Santoso, Iman; Yu, Xiaojiang; Diao, Caozheng; Yang, Ping; Breese, Mark B H; Venkatesan, T; Lin, Hsin; Ariando; Rusydi, Andrivo

    2016-05-13

    We report the first observation of the coexistence of a distinct midgap state and a Mott state in undoped and their evolution in electron and hole-doped ambipolar Y_{0.38}La_{0.62}(Ba_{0.82}La_{0.18})_{2}Cu_{3}O_{y} films using spectroscopic ellipsometry and x-ray absorption spectroscopies at the O K and Cu L_{3,2} edges. Supported by theoretical calculations, the midgap state is shown to originate from antiferromagnetic correlation. Surprisingly, while the magnetic state collapses and its correlation strength weakens with dopings, the Mott state in contrast moves toward a higher energy and its correlation strength increases. Our result provides important clues to the mechanism of electronic correlation strengths and superconductivity in cuprates. PMID:27232036

  6. Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers

    NASA Astrophysics Data System (ADS)

    Che, Y. L.; Pelz, J. P.

    2010-06-01

    Four-terminal ambipolar ballistic electron emission microscopy studies are conducted on Au/Si and Cu/Si Schottky contacts fabricated on back-gated silicon-on-insulator wafers, allowing the electric field to be varied so that both electron (n)- and hole (p)-Schottky barrier heights can be measured at the same sample location. While the individual n- and p-Schottky barrier heights varied by more than 200 meV between the Au/Si and Cu/Si contacts, for a given sample they sum to within 15 meV of the same value, indicating that the individual variations are due to variations in a local surface dipole as compared with tip effects or variations in local composition.

  7. Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

    SciTech Connect

    Aïssa, B.; Nedil, M.; Kroeger, J.; Haddad, T.; Rosei, F.

    2015-09-28

    We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

  8. Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids

    DOE PAGESBeta

    Zhou, Ye; Han, Su -Ting; Sonar, Prashant; Ma, Xinlei; Chen, Jihua; Zheng, Zijian; Roy, V. A. L.

    2015-03-24

    The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. Wemore » conclude that this hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.« less

  9. Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids

    SciTech Connect

    Zhou, Ye; Han, Su -Ting; Sonar, Prashant; Ma, Xinlei; Chen, Jihua; Zheng, Zijian; Roy, V. A. L.

    2015-03-24

    The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. We conclude that this hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.

  10. In situ tuning and probing the ambipolar field effect on multiwall carbon nanotubes

    SciTech Connect

    Chen, Li-Ying; Chang, Chia-Seng

    2014-12-15

    We report a method of fabricating ultra-clean and hysteresis-free multiwall carbon nanotube field-effect transistors (CNFETs) inside the ultra-high vacuum transmission electron microscope equipped with a movable gold tip as a local gate. By tailoring the shell structure of the nanotube and varying the drain-source voltage (V{sub ds}), we can tune the electronic characteristic of a multiwall CNFET in situ. We have also found that the Schottky barriers of a multiwall CNFET are generated within the nanotube, but not at the nanotube/electrode contacts, and the barrier height has been derived. We have subsequently demonstrated the ambipolar characteristics of the CNFET with concurrent high-resolution imaging and local gating.

  11. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    NASA Astrophysics Data System (ADS)

    Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

    2016-07-01

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔVth ˜ 15 V) and a long retention time (>105 s). The magnitude of ΔVth depended on both P/E voltages and the bias voltage (VDS): ΔVth was a cubic function to VP/E and linearly depended on VDS. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  12. Ambipolar escape from Venus, Mars and Titan, and negative ions at Titan

    NASA Astrophysics Data System (ADS)

    Coates, Andrew

    2016-07-01

    Ionospheric photoelectrons are a natural product of the photo-ionisation of planetary atmospheres. Their energy spectrum is distinctive and depends on the solar spectrum in the EUV and X-ray region. On production, the energetic electrons move along the magnetic field (open or draped), setting up an ambipolar electric field which can extract ions. This provides an escape mechanism similar to Earth's 'polar wind'. As these objects are unmagnetised, this produces an extended escape mechanism over the whole sunlit ionosphere. Here, we review recent measurements of photoelectrons far from the parent objects at Venus, Mars and Titan, from Venus Express, Mars Express, Maven and Cassini, and discuss similarities and related escape rates. We also review the pioneering observations of the remarkably heavy negative ions discovered in Titan's ionosphere.

  13. Ambipolar-transporting coaxial nanotubes with a tailored molecular graphene–fullerene heterojunction

    PubMed Central

    Yamamoto, Yohei; Zhang, Guanxin; Jin, Wusong; Fukushima, Takanori; Ishii, Noriyuki; Saeki, Akinori; Seki, Shu; Tagawa, Seiichi; Minari, Takeo; Tsukagoshi, Kazuhito; Aida, Takuzo

    2009-01-01

    Despite a large steric bulk of C60, a molecular graphene with a covalently linked C60 pendant [hexabenzocoronene (HBC)–C60; 1] self-assembles into a coaxial nanotube whose wall consists of a graphite-like π-stacked HBC array, whereas the nanotube surface is fully covered by a molecular layer of clustering C60. Because of this explicit coaxial configuration, the nanotube exhibits an ambipolar character in the field-effect transistor output [hole mobility (μh) = 9.7 × 10−7 cm2 V−1 s−1; electron mobility (μe) = 1.1 × 10−5 cm2 V−1 s−1] and displays a photovoltaic response upon light illumination. Successful coassembly of 1 and an HBC derivative without C60 (2) allows for tailoring the p/n heterojunction in the nanotube, so that its ambipolar carrier transport property can be optimized for enhancing the open-circuit voltage in the photovoltaic output. As evaluated by an electrodeless method called flash-photolysis time-resolved microwave conductivity technique, the intratubular hole mobility (2.0 cm2 V−1 s−1) of a coassembled nanotube containing 10 mol % of HBC–C60 (1) is as large as the intersheet mobility in graphite. The homotropic nanotube of 2 blended with a soluble C60 derivative [(6,6)-phenyl C61 butyric acid methyl ester] displayed a photovoltaic response with a much different composition dependency, where the largest open-circuit voltage attained was obviously lower than that realized by the coassembly of 1 and 2. PMID:19940243

  14. Sensors: A Highly Sensitive Diketopyrrolopyrrole-Based Ambipolar Transistor for Selective Detection and Discrimination of Xylene Isomers (Adv. Mater. 21/2016).

    PubMed

    Wang, Bin; Huynh, Tan-Phat; Wu, Weiwei; Hayek, Naseem; Do, Thu Trang; Cancilla, John C; Torrecilla, Jose S; Nahid, Masrur Morshed; Colwell, John M; Gazit, Oz M; Puniredd, Sreenivasa Reddy; McNeill, Christopher R; Sonar, Prashant; Haick, Hossam

    2016-06-01

    An ambipolar organic field-effect transistor (OFET) based on poly(diketopyrrolopyrrole-terthiophene) (PDPPHD-T3) is shown by P. Sonar, H. Haick, and co-workers on page 4012 to sensitively detect xylene isomers at low to 40 ppm level in multiple sensing features. Combined with pattern-recognition algorithms, a sole ambipolar FET sensor, rather than arrays of sensors, is able to discriminate highly similar xylene structural isomers from each other. PMID:27246920

  15. An ambipolar phosphine oxide-based host for high power efficiency blue phosphorescent organic light emitting devices

    SciTech Connect

    Polikarpov, Evgueni; Swensen, James S.; Chopra, Neetu; So, Franky; Padmaperuma, Asanga B.

    2009-06-01

    We report blue electrophosphorescent organic light emitting devices (OLEDs) with a new ambipolar host material, 4-(diphenylphosphoryl)-N,N-diphenylaniline (HM-A1), doped with the blue phosphor iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,C2’]picolinate (FIrpic). The ambipolar nature of the host was verified using single carrier devices. The power efficiency of devices that employed 2,8-bis(diphenylphosphoryl)dibenzothiophene (PO15) as the electron transport layer showed optimized device performance when the electron transport layer thickness was 500 Å, giving a peak power efficiency of 46 lm/W (corresponding external quantum efficiency of 17.1%). The external quantum efficiency and power efficiency at the brightness of 800 Cd/m2 were measured with no light outcoupling enhancement and found to be 15.4% and 26 lm/W, respectively.

  16. Control of Threshold Voltage for Top-Gated Ambipolar Field-Effect Transistor by Gate Buffer Layer.

    PubMed

    Khim, Dongyoon; Shin, Eul-Yong; Xu, Yong; Park, Won-Tae; Jin, Sung-Ho; Noh, Yong-Young

    2016-07-13

    The threshold voltage and onset voltage for p-channel and n-channel regimes of solution-processed ambipolar organic transistors with top-gate/bottom-contact (TG/BC) geometry were effectively tuned by gate buffer layers in between the gate electrode and the dielectric. The work function of a pristine Al gate electrode (-4.1 eV) was modified by cesium carbonate and vanadium oxide to -2.1 and -5.1 eV, respectively, which could control the flat-band voltage, leading to a remarkable shift of transfer curves in both negative and positive gate voltage directions without any side effects. One important feature is that the mobility of transistors is not very sensitive to the gate buffer layer. This method is simple but useful for electronic devices where the threshold voltage should be precisely controlled, such as ambipolar circuits, memory devices, and light-emitting device applications. PMID:27323003

  17. Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching Characteristics.

    PubMed

    Jeong, Jae Won; Jang, E-San; Shin, Sunhae; Kim, Kyung Rok

    2016-05-01

    We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventional single-peak MOS-NDR circuit by employing ambipolar behavior of TFET. The fluctuated voltage transfer curve (VTC) from ambipolar inverter is analyzed with simple model and successfully demonstrated with TFET, as a practical example, on the device simulation. We also verified that the fluctuated VTC generates additional peak and valleys on NDR characteristics by using circuit simulations. Moreover, by adjusting the threshold voltage of conventional MOSFET, ultra-high 1st and 2nd peak-to-valley current ratio (PVCR) over 10(7) is obtained with fully suppressed valley currents. The proposed double-peak NDR circuit expected to apply on faster switching and low power multi-functional applications. PMID:27483818

  18. Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides.

    PubMed

    Li, Yongtao; Wang, Yan; Huang, Le; Wang, Xiaoting; Li, Xingyun; Deng, Hui-Xiong; Wei, Zhongming; Li, Jingbo

    2016-06-22

    Two-dimensional (2D) materials and their related van der Waals heterostructures have attracted considerable interest for their fascinating new properties. There are still many challenges in realizing the potential of 2D semiconductors in practical (opto)electronics such as signal transmission and logic circuit, etc. Herein, we report the gate-tunable anti-ambipolar devices on the basis of few-layer transition metal dichalcogenides (TMDs) heterostructures to gain higher information storage density. Our study shows that carrier concentration regulated by the gate voltage plays a major role in the "anti-ambipolar" behavior, where the drain-source current can only pass through in specific range of gate voltage (Vg) and it will be restrained if the Vg goes beyond the range. Several improved strategies were theoretically discussed and experimentally adopted to obtain higher current on/off ratio for the anti-ambipolar devices, such as choosing suitable p-/n-pair, increasing carrier concentration by using thicker-layer TMDs, and so on. The modified SnS2/WSe2 device with the current on/off ratio exceeding 200 and on-state Vg ranging from -20 to 0 V was successfully achieved. On the basis of the anti-ambipolar field-effect transistors (FETs), we also reveal the potential of three-channel device unit for signal processing and information storage. With the equal quantity N of device units, 3(N) digital signals can be obtained from such three-channel devices, which are much larger than 2(N) ones obtained from traditional two-channel complementary metal oxide semiconductors (CMOS). PMID:27258569

  19. Enhanced ambipolar charge injection with semiconducting polymer/carbon nanotube thin films for light-emitting transistors.

    PubMed

    Gwinner, Michael C; Jakubka, Florian; Gannott, Florentina; Sirringhaus, Henning; Zaumseil, Jana

    2012-01-24

    We investigate the influence of small amounts of semiconducting single-walled carbon nanotubes (SWNTs) dispersed in polyfluorenes such as poly(9,9-di-n-octylfluorene-alt-benzothiadiazole (F8BT) and poly(9,9-dioctylfluorene) (F8) on device characteristics of bottom contact/top gate ambipolar light-emitting field-effect transistors (LEFETs) based on these conjugated polymers. We find that the presence of SWNTs within the semiconducting layer at concentrations below the percolation limit significantly increases both hole and electron injection, even for a large band gap semiconductor like F8, without leading to significant luminescence quenching of the conjugated polymer. As a result of the reduced contact resistance and lower threshold voltages, larger ambipolar currents and thus brighter light emission are observed. We examine possible mechanisms of this effect such as energy level alignment, reduced bulk resistance above the contacts, and field-enhanced injection at the nanotube tips. The observed ambipolar injection improvement is applicable to most conjugated polymers in staggered transistor configurations or similar organic electronic devices where injection barriers are an issue. PMID:22142143

  20. Sub-10 nm transparent all-around-gated ambipolar ionic field effect transistor.

    PubMed

    Lee, Seung-Hyun; Lee, Hyomin; Jin, Tianguang; Park, Sungmin; Yoon, Byung Jun; Sung, Gun Yong; Kim, Ki-Bum; Kim, Sung Jae

    2015-01-21

    In this paper, we developed a versatile ionic field effect transistor (IFET) which has an ambipolar function for manipulating molecules regardless of their polarity and can be operated at a wide range of electrolytic concentrations (10(-5) M-1 M). The IFET has circular nanochannels radially covered by gate electrodes, called "all-around-gate", with an aluminum oxide (Al2O3) oxide layer of a near-zero surface charge. Experimental and numerical validations were conducted for characterizing the IFET. We found that the versatility originated from the zero-charge density of the oxide layer and all-around-gate structure which increased the efficiency of the gate effect 5 times higher than a previously developed planar-gate by capacitance calculations. Our numerical model adapted Poisson-Nernst-Planck-Stokes (PNPS) formulations with additional nonlinear constraints of a fringing field effect and a counter-ion condensation and the experimental and numerical results were well matched. The device can control the transportation of ions at concentrations up to 1 M electrolyte which resembles a backflow of a shale gas extraction process. Furthermore, while traditional IFETs can manipulate either positively or negatively charged species depending on the inherently large surface charge of oxide layer, the presenting device and mechanism provide effective means to control the motion of both negatively and positively charged molecules which is important in biomolecule transport through nanochannels, medical diagnosis system and point-of-care system, etc. PMID:25363392

  1. Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

    NASA Astrophysics Data System (ADS)

    Dell'Erba, Giorgio; Luzio, Alessandro; Natali, Dario; Kim, Juhwan; Khim, Dongyoon; Kim, Dong-Yu; Noh, Yong-Young; Caironi, Mario

    2014-04-01

    Ambipolar semiconducting polymers, characterized by both high electron (μe) and hole (μh) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μh = 0.29 cm2/V s and μe = 0.001 cm2/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μe = 0.12 cm2/V s and μh = 8 × 10-4 cm2/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

  2. Ringing After a High-Energy Collision: Ambipolar Oscillations During Impact Plasma Expansion

    NASA Technical Reports Server (NTRS)

    Zimmerman, M. I.; Farrell, W. M.; Stubbs, T. J.

    2012-01-01

    High-velocity impacts on the Moon and other airless bodies deliver energy and material to the lunar surface and exosphere. The target and i mpactor material may become vaporized and ionized to form a collision al plasma that expands outward and eventually becomes collisionless. In the present work, kinetic simulations of the later collision less stage of impact plasma expansion are performed. Attention is paid to characterizing "ambipolar oscillations" in which thermodynamic distur bances propagate outward to generate "ringing" within the expanding e lectron cloud, which could radiate an electromagnetic signature of lo cal plasma conditions. The process is not unlike a beam-plasma intera ction, with the perturbing electron population in the present case ac ting as a highly thermal "beam" that resonates along the expanding de nsity gradient. Understanding the electromagnetic aspects of impact p lasma expansion could provide insight into the lasting effects of nat ural, impact-generated currents on airless surfaces and charging haza rds to human exploration infrastructure and instrumentation.

  3. Enhanced O2+ loss at Mars due to an ambipolar electric field from electron heating

    NASA Astrophysics Data System (ADS)

    Ergun, R. E.; Andersson, L. A.; Fowler, C. M.; Woodson, A. K.; Weber, T. D.; Delory, G. T.; Andrews, D. J.; Eriksson, A. I.; McEnulty, T.; Morooka, M. W.; Stewart, A. I. F.; Mahaffy, P. R.; Jakosky, B. M.

    2016-05-01

    Recent results from the MAVEN Langmuir Probe and Waves instrument suggest higher than predicted electron temperatures (Te) in Mars' dayside ionosphere above ~180 km in altitude. Correspondingly, measurements from Neutral Gas and Ion Mass Spectrometer indicate significant abundances of O2+ up to ~500 km in altitude, suggesting that O2+ may be a principal ion loss mechanism of oxygen. In this article, we investigate the effects of the higher Te (which results from electron heating) and ion heating on ion outflow and loss. Numerical solutions show that plasma processes including ion heating and higher Te may greatly increase O2+ loss at Mars. In particular, enhanced Te in Mars' ionosphere just above the exobase creates a substantial ambipolar electric field with a potential (eΦ) of several kBTe, which draws ions out of the region allowing for enhanced escape. With active solar wind, electron, and ion heating, direct O2+ loss could match or exceed loss via dissociative recombination of O2+. These results suggest that direct loss of O2+ may have played a significant role in the loss of oxygen at Mars over time.

  4. Numerical modeling of a fast-axial-flow CO2 laser with considering viscosity and ambipolar diffusion

    NASA Astrophysics Data System (ADS)

    Galeev, Ravil S.; Fedosov, A. A.

    1996-03-01

    A numerical method for analysis of a fast axial flow glow discharge carbon dioxide laser is developed. The method is based on the self-consistent solution to the two-dimensional steady- state Navier-Stokes equations in thin-shear-layer approximation (slender channel equations), the parabolized glow discharge equations, and the vibrational relaxation equations. The discharge equations include the continuity equations for the electrons, the positive and negative ions. The one-mode relaxation model for the vibrational kinetics and the plane-parallel optical resonator model are used. The present model is based on the assumption of the charge neutrality and limited by consideration of the positive column of discharge without taking into account the cathode-fall and anode-fall regions.

  5. Sub-10 nm transparent all-around-gated ambipolar ionic field effect transistor

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Hyun; Lee, Hyomin; Jin, Tianguang; Park, Sungmin; Yoon, Byung Jun; Sung, Gun Yong; Kim, Ki-Bum; Kim, Sung Jae

    2014-12-01

    In this paper, we developed a versatile ionic field effect transistor (IFET) which has an ambipolar function for manipulating molecules regardless of their polarity and can be operated at a wide range of electrolytic concentrations (10-5 M-1 M). The IFET has circular nanochannels radially covered by gate electrodes, called ``all-around-gate'', with an aluminum oxide (Al2O3) oxide layer of a near-zero surface charge. Experimental and numerical validations were conducted for characterizing the IFET. We found that the versatility originated from the zero-charge density of the oxide layer and all-around-gate structure which increased the efficiency of the gate effect 5 times higher than a previously developed planar-gate by capacitance calculations. Our numerical model adapted Poisson-Nernst-Planck-Stokes (PNPS) formulations with additional nonlinear constraints of a fringing field effect and a counter-ion condensation and the experimental and numerical results were well matched. The device can control the transportation of ions at concentrations up to 1 M electrolyte which resembles a backflow of a shale gas extraction process. Furthermore, while traditional IFETs can manipulate either positively or negatively charged species depending on the inherently large surface charge of oxide layer, the presenting device and mechanism provide effective means to control the motion of both negatively and positively charged molecules which is important in biomolecule transport through nanochannels, medical diagnosis system and point-of-care system, etc.In this paper, we developed a versatile ionic field effect transistor (IFET) which has an ambipolar function for manipulating molecules regardless of their polarity and can be operated at a wide range of electrolytic concentrations (10-5 M-1 M). The IFET has circular nanochannels radially covered by gate electrodes, called ``all-around-gate'', with an aluminum oxide (Al2O3) oxide layer of a near-zero surface charge. Experimental and

  6. MarsCAT: Mars Array of ionospheric Research Satellites using the CubeSat Ambipolar Thruster

    NASA Astrophysics Data System (ADS)

    Bering, Edgar Andrew; Pinsky, Lawrence S.; Li, Liming; Jackson, David; Chen, Ji; Reed, Helen; Moldwin, Mark; Kasper, Justin; Sheehan, J. P.; Forbes, James Richard; Heine, Thomas; Case, Anthony; Stevens, Michael; Sibeck, David G.

    2015-11-01

    The MarsCAT (Mars Array of ionospheric Research Satellites using the CubeSat Ambipolar Thruster) Mission is a two 6U CubeSat mission to study the ionosphere of Mars proposed for the NASA SIMPLeX opportunity. The mission will investigate the plasma and magnetic structure of the Martian ionosphere, including transient plasma structures, magnetic field structure and dynamics, and energetic particle activity. The transit plan calls for a piggy back ride with Mars 2020 using a CAT burn for MOI, the first demonstration of CubeSat propulsion for interplanetary travel. MarsCAT will make correlated multipoint studies of the ionosphere and magnetic field of Mars. Specifically, the two spacecraft will make in situ observations of the plasma density, temperature, and convection in the ionosphere of Mars. They will also make total electron content measurements along the line of sight between the two spacecraft and simultaneous 3-axis local magnetic field measurements in two locations. Additionally, MarsCAT will demonstrate the performance of new CubeSat telemetry antennas designed at the University of Houston that are designed to be low profile, rugged, and with a higher gain than conventional monopole (whip) antennas. The two MarsCAT CubeSats will have five science instruments: a 3-axis DC magnetometer, adouble-Langmuir probe, a Faraday cup, a solid state energetic particle detector (Science Enhancement Option), and interspacecraft total electron content radio occulation experiment. The MarsCAT spacecraft will be solar powered and equipped with a CAT thruster that can provide up to 4.8 km/s of delta-V, which is sufficient to achieve Mars orbit using the Mars 2020 piggyback. They have an active attitude control system, using a sun sensor and flight-proven star tracker for determination, and momentum wheels for 3-axis attitude control.

  7. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors.

    PubMed

    Li, Xuefei; Du, Yuchen; Si, Mengwei; Yang, Lingming; Li, Sichao; Li, Tiaoyang; Xiong, Xiong; Ye, Peide; Wu, Yanqing

    2016-02-14

    Multi-layer black phosphorus has emerged as a strong candidate owing to its high carrier mobility with most of the previous research work focused on its p-type properties. Very few studies have been performed on its n-type electronic characteristics which are important not only for the complementary operation for logic, but also crucial for understanding the carrier transport through the metal-black phosphorus junction. A thorough understanding and proper evaluation of the performance potential of both p- and n-types are highly desirable. In this paper, we investigate the temperature dependent ambipolar operation of both electron and hole transport from 300 K to 20 K. On-currents as high as 85 μA μm(-1) for a 0.2 μm channel length BP nFET at 300 K are observed. Moreover, we provide the first systematic study on the low frequency noise mechanisms for both n-channel and p-channel BP transistors. The dominated noise mechanisms of the multi-layer BP nFET and pFET are mobility fluctuation and carrier number fluctuations with correlated mobility fluctuations, respectively. We have also established a baseline of the low electrical noise of 8.1 × 10(-9)μm(2) Hz(-1) at 10 Hz at room temperature for BP pFETs, which is 3 times improvement over previous reports, and 7.0 × 10(-8)μm(2) Hz(-1) for BP nFETs for the first time. PMID:26806878

  8. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors

    NASA Astrophysics Data System (ADS)

    Li, Xuefei; Du, Yuchen; Si, Mengwei; Yang, Lingming; Li, Sichao; Li, Tiaoyang; Xiong, Xiong; Ye, Peide; Wu, Yanqing

    2016-02-01

    Multi-layer black phosphorus has emerged as a strong candidate owing to its high carrier mobility with most of the previous research work focused on its p-type properties. Very few studies have been performed on its n-type electronic characteristics which are important not only for the complementary operation for logic, but also crucial for understanding the carrier transport through the metal-black phosphorus junction. A thorough understanding and proper evaluation of the performance potential of both p- and n-types are highly desirable. In this paper, we investigate the temperature dependent ambipolar operation of both electron and hole transport from 300 K to 20 K. On-currents as high as 85 μA μm-1 for a 0.2 μm channel length BP nFET at 300 K are observed. Moreover, we provide the first systematic study on the low frequency noise mechanisms for both n-channel and p-channel BP transistors. The dominated noise mechanisms of the multi-layer BP nFET and pFET are mobility fluctuation and carrier number fluctuations with correlated mobility fluctuations, respectively. We have also established a baseline of the low electrical noise of 8.1 × 10-9 μm2 Hz-1 at 10 Hz at room temperature for BP pFETs, which is 3 times improvement over previous reports, and 7.0 × 10-8 μm2 Hz-1 for BP nFETs for the first time.

  9. MarsCAT: Mars Array of ionospheric Research Satellites using the CubeSat Ambipolar Thruster

    NASA Astrophysics Data System (ADS)

    Bering, E. A., III; Pinsky, L.; Li, L.; Jackson, D. R.; Chen, J.; Reed, H.; Moldwin, M.; Kasper, J. C.; Sheehan, J. P.; Forbes, J.; Heine, T.; Case, A. W.; Stevens, M. L.; Sibeck, D. G.

    2015-12-01

    The MarsCAT (Mars Array of ionospheric Research Satellites using the CubeSat Ambipolar Thruster) Mission is a two 6U CubeSat mission to study the ionosphere of Mars proposed for the NASA SIMPLeX opportunity. The mission will investigate the plasma and magnetic structure of the Martian ionosphere, including transient plasma structures, magnetic field structure and dynamics, and energetic particle activity. The transit plan calls for a piggy back ride with Mars 2020 using a CAT burn for MOI, the first demonstration of CubeSat propulsion for interplanetary travel. MarsCAT will make correlated multipoint studies of the ionosphere and magnetic field of Mars. Specifically, the two spacecraft will make in situ observations of the plasma density, temperature, and convection in the ionosphere of Mars. They will also make total electron content measurements along the line of sight between the two spacecraft and simultaneous 3-axis local magnetic field measurements in two locations. Additionally, MarsCAT will demonstrate the performance of new CubeSat telemetry antennas designed at the University of Houston that are designed to be low profile, rugged, and with a higher gain than conventional monopole (whip) antennas. The two MarsCAT CubeSats will have five science instruments: a 3-axis DC magnetometer, adouble-Langmuir probe, a Faraday cup, a solid state energetic particle detector (Science Enhancement Option), and interspacecraft total electron content radio occulation experiment. The MarsCAT spacecraft will be solar powered and equipped with a CAT thruster that can provide up to 4.8 km/s of delta-V, which is sufficient to achieve Mars orbit using the Mars 2020 piggyback. They have an active attitude control system, using a sun sensor and flight-proven star tracker for determination, and momentum wheels for 3-axis attitude control.

  10. Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

    SciTech Connect

    Dell'Erba, Giorgio; Natali, Dario; Luzio, Alessandro; Caironi, Mario E-mail: yynoh@dongguk.edu; Noh, Yong-Young E-mail: yynoh@dongguk.edu

    2014-04-14

    Ambipolar semiconducting polymers, characterized by both high electron (μ{sub e}) and hole (μ{sub h}) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μ{sub h} = 0.29 cm{sup 2}/V s and μ{sub e} = 0.001 cm{sup 2}/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μ{sub e} = 0.12 cm{sup 2}/V s and μ{sub h} = 8 × 10{sup −4} cm{sup 2}/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

  11. Thiocyanate-capped PbS nanocubes: ambipolar transport enables quantum dot based circuits on a flexible substrate.

    PubMed

    Koh, Weon-Kyu; Saudari, Sangameshwar R; Fafarman, Aaron T; Kagan, Cherie R; Murray, Christopher B

    2011-11-01

    We report the use of thiocyanate as a ligand for lead sulfide (PbS) nanocubes for high-performance, thin-film electronics. PbS nanocubes, self-assembled into thin films and capped with the thiocyanate, exhibit ambipolar characteristics in field-effect transistors. The nearly balanced, high mobilities for electrons and holes enable the fabrication of CMOS-like inverters with promising gains of ∼22 from a single semiconductor material. The mild chemical treatment and low-temperature processing conditions are compatible with plastic substrates, allowing the realization of flexible, nonsintered quantum dot circuits. PMID:22011060

  12. Observation of ambipolar switching in a silver nanoparticle single-electron transistor with multiple molecular floating gates

    NASA Astrophysics Data System (ADS)

    Yamamoto, Makoto; Shinohara, Shuhei; Tamada, Kaoru; Ishii, Hisao; Noguchi, Yutaka

    2016-03-01

    Ambipolar switching behavior was observed in a silver nanoparticle (AgNP)-based single-electron transistor (SET) with tetra-tert-butyl copper phthalocyanine (ttbCuPc) as a molecular floating gate. Depending on the wavelength of the incident light, the stability diagram shifted to the negative and positive directions along the gate voltage axis. These results were explained by the photoinduced charging of ttbCuPc molecules in the vicinity of AgNPs. Moreover, multiple device states were induced by the light irradiation at a wavelength of 600 nm, suggesting that multiple ttbCuPc molecules individually worked as a floating gate.

  13. Modeling solar flare conduction fronts. I - Homogeneous plasmas and ion-acoustic turbulence. II - Inhomogeneous plasmas and ambipolar electric fields

    NASA Technical Reports Server (NTRS)

    Mckean, M. E.; Winglee, R. M.; Dulk, G. A.

    1990-01-01

    A one-dimensional, electrostatic, particle-in-cell simulation is used here to model the expansion of a heated electron population in a coronal loop during a solar flare and the characteristics of the associated X-ray emissions. The hot electrons expand outward from the localized region, creating an ambipolar electric field which accelerates a return current of cooler, ambient electrons. Ion-acoustic waves are generated by the return currents as proposed by Brown et al. (1979), but they play little or no role in containing energetic electrons and the conduction front proposed by Brown et al. does not form. The X-ray emission efficiency of the electrons is too low in the corona for them to be the source of hard X-ray bursts. The particle dynamics changes dramatically if the heated plasma is at low altitudes and expands upward into the more tenuous plasma at higher altitudes. Two important applications of this finding are the radio-frequency heating of the corona and the collisional heating of the chromosphere by precipitating energetic electrons. In both cases, the overlying plasma has a density that is too low to supply a balancing return current to the expanding hot electrons. As a result, an ambipolar electric field develops that tends to confine the energetic electrons behind a front that propagate outward at about the speed of sound.

  14. Importance of Solubilizing Group and Backbone Planarity in Low Band Gap Polymers for High Performance Ambipolar field-effect Transistors

    SciTech Connect

    Lee, Joong Suk; Son, Seon Kyoung; Song, Sanghoon; Kim, Hyunjung; Lee, Dong Ryoul; Kim, Kyungkon; Ko, Min Jae; Choi, Dong Hoon; Kim, BongSoo; Cho, Jeong Ho

    2012-06-13

    We investigated the performance of ambipolar field-effect transistors based on a series of alternating low band gap polymers of oligothiophene and diketopyrrolopyrrole (DPP). The polymers contain oligothiophene units of terthiophene [T3] and thiophene-thienothiophene-thiophene [T2TT] and DPP units carrying branched alkyl chains of 2-hexyldecyl [HD] or 2-octyldodecyl [OD]. The structural variation allows us to do a systematic study on the relationship between the interchain stacking/ordering of semiconducting polymers and their resulting device performance. On the basis of synchrotron X-ray diffraction and atomic force microscopy measurements on polymer films, we found that longer branched alkyl side chains, i.e., OD, and longer and more planar oligothiophene, i.e., T2TT, generate the more crystalline structures. Upon thermal annealing, the crystallinity of the polymers was largely improved, and polymers containing a longer branched alkyl chain responded faster because longer alkyl chains have larger cohesive forces than shorter chains. For all the polymers, excellent ambipolar behavior was observed with a maximum hole and electron mobility of 2.2 and 0.2 cm{sup 2} V{sup -1} s{sup -1}, respectively.

  15. EED f and IED f of the non-ambipolar e--beam plasma and their effects on etch

    NASA Astrophysics Data System (ADS)

    Chen, Lee

    2014-10-01

    The control of electron shading is crucial in achieving the super-high aspect ratio contact (HARC); precise ion-energy control is essential in the selective etching of lamella diblock copolymers to develop the nano-lines for Direct Self Assembly (DSA). The plasma EED f not only determines the chemistry but also dictates the shading level of the features. The above processes are presented as examples to illustrate the effects of EED f and the surgical surface-excitation by a controlled IED f. In addition to demonstrating the methods of achieving a prescribed IED f through external bias, the properties of the non-ambipolar electron plasma (NEP) will be presented. NEP is heated by the non-ambipolar beam-current density in the range of 10s Acm-2 through beam-plasma instabilities. Its EED f has a Maxwellian bulk followed by a broad energy-continuum connecting to the most energetic group with energies above the beam-energy and such EED f seems consistent with that required for deep-contact etching. The remnant of the injected electron-beam power terminates at the NEP end-boundary (i.e., wafer) could set up a controllable DC sheath potential resulting in mono-energetic surface excitation by the charge-neutral plasma beam without the application of external bias. In collaboration with Zhiying Chen, Tokyo Electron America, Inc., Austin, TX 78741.

  16. Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

    PubMed

    Baeg, Kang-Jun; Caironi, Mario; Noh, Yong-Young

    2013-08-21

    transport properties. Among this class of materials, various polymers can show well balanced electrons and holes mobility, therefore being indicated as ambipolar semiconductors, good environmental stability, and a small band-gap, which simplifies the tuning of charge injection. This opened up the possibility of taking advantage of the superior performances offered by complementary "CMOS-like" logic for the design of digital ICs, easing the scaling down of critical geometrical features, and achieving higher complexity from robust single gates (e.g., inverters) and test circuits (e.g., ring oscillators) to more complete circuits. Here, we review the recent progress in the development of printed ICs based on polymeric semiconductors suitable for large-volume micro- and nano-electronics applications. Particular attention is paid to the strategies proposed in the literature to design and synthesize high mobility polymers and to develop suitable printing tools and techniques to allow for improved patterning capability required for the down-scaling of devices in order to achieve the operation frequencies needed for applications, such as flexible radio-frequency identification (RFID) tags, near-field communication (NFC) devices, ambient electronics, and portable flexible displays. PMID:23761043

  17. Tuning charge balance in PHOLEDs with ambipolar host materials to achieve high efficiency

    SciTech Connect

    Padmaperuma, Asanga B.; Koech, Phillip K.; Cosimbescu, Lelia; Polikarpov, Evgueni; Swensen, James S.; Chopra, Neetu; So, Franky; Sapochak, Linda S.; Gaspar, Daniel J.

    2009-08-27

    operating voltages, particularly if this is to be achieved in a device that can be manufactured at low cost. To avoid the efficiency losses associated with phosphorescence quenching by back-energy transfer from the dopant onto the host, the triplet excited states of the host material must be higher in energy than the triplet excited state of the dopant.5 This must be accomplished without sacrificing the charge transporting properties of the composite.6 Similar problems limit the efficiency of OLED-based displays, where blue light emitters are the least efficient and least stable. We previously demonstrated the utility of organic phosphine oxide (PO) materials as electron transporting HMs for FIrpic in blue OLEDs.7 However, the high reluctance of PO materials to oxidation and thus, hole injection limits the ability to balance charge injection and transport in the EML without relying on charge transport by the phosphorescent dopant. PO host materials were engineered to transport both electrons and holes in the EML and still maintain high triplet exciton energy to ensure efficient energy transfer to the dopant (Figure 1). There are examples of combining hole transporting moieties (mainly aromatic amines) with electron transport moieties (e.g., oxadiazoles, triazines, boranes)8 to develop new emitter and host materials for small molecule and polymer9 OLEDs. The challenge is to combine the two moieties without lowering the triplet energy of the target molecule. For example, coupling of a dimesitylphenylboryl moiety with a tertiary aromatic amine (FIAMBOT) results in intramolecular electron transfer from the amine to the boron atom through the bridging phenyl. The mesomeric effect of the dimesitylphenylboryl unit acts to extend conjugation and lowers triplet exciton energies (< 2.8 eV) rendering such systems inadequate as ambipolar hosts for blue phosphors.

  18. Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

    NASA Technical Reports Server (NTRS)

    Hershkowitz, Noah (Inventor); Longmier, Benjamin (Inventor); Baalrud, Scott (Inventor)

    2011-01-01

    An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

  19. Dielectric interface-dependent spatial charge distribution in ambipolar polymer semiconductors embedded in dual-gate field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Jiyoul; Roelofs, W. S. Christian; Janssen, Rene A. J.; Gelinck, Gerwin H.

    2016-07-01

    The spatial charge distribution in diketopyrrolopyrrole-containing ambipolar polymeric semiconductors embedded in dual-gate field-effect transistors (DGFETs) was investigated. The DGFETs have identical active channel layers but two different channel/gate interfaces, with a CYTOP™ organic dielectric layer for the top-gate and an octadecyltrichlorosilane (ODTS) self-assembled monolayer-treated inorganic SiO2 dielectric for the bottom-gate, respectively. Temperature-dependent transfer measurements of the DGFETs were conducted to examine the charge transport at each interface. By fitting the temperature-dependent measurement results to the modified Vissenberg-Matters model, it can be inferred that the top-channel interfacing with the fluorinated organic dielectric layers has confined charge transport to two-dimensions, whereas the bottom-channel interfacing with the ODTS-treated SiO2 dielectric layers has three-dimensional charge transport.

  20. Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

    DOEpatents

    Hershkowitz, Noah; Longmier, Benjamin; Baalrud, Scott

    2009-03-03

    An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

  1. Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

    NASA Technical Reports Server (NTRS)

    Hershkowitz, Noah (Inventor); Longmier, Benjamin (Inventor); Baalrud, Scott (Inventor)

    2009-01-01

    An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

  2. Strongly Metallic Electron and Hole 2D Transport in an Ambipolar Si-Vacuum Field Effect Transistor

    NASA Astrophysics Data System (ADS)

    Hu, Binhui; Yazdanpanah, M. M.; Kane, B. E.; Hwang, E. H.; Das Sarma, S.

    2015-07-01

    We report experiment and theory on an ambipolar gate-controlled Si(111)-vacuum field effect transistor where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune the system from being a 2D electron system at positive gate voltage to a 2D hole system at negative gate voltage. The electron (hole) conductivity manifests strong (moderate) metallic temperature dependence with the conductivity decreasing by a factor of 8 (2) between 0.3 K and 4.2 K with the peak electron mobility (˜18 m2/V s ) being roughly 20 times larger than the peak hole mobility (in the same sample). Our theory explains the data well using random phase approximation screening of background Coulomb disorder, establishing that the observed metallicity is a direct consequence of the strong temperature dependence of the effective screened disorder.

  3. Improvement of properties of an ambipolar organic field-effect transistor by using a singlet biradicaloid film

    NASA Astrophysics Data System (ADS)

    Yamane, Wataru; Koike, Harunobu; Chikamatsu, Masayuki; Kubo, Takashi; Nishiuchi, Tomohiko; Kanai, Kaname

    2016-01-01

    We have improved the properties of ambipolar organic field-effect transistors by chemically treating the source and drain electrodes with a vacuum-deposited biradicaloid film. Biradicaloid was a diphenyl derivative of s-indacenodiphenalene (Ph2-IDPL). An alkane thiol self-assembled monolayer (SAM) was used as an insulator buffer layer at the Ph2-IDPL/electrode interface to prevent off-current. We confirmed the transport level alignment at the Ph2-IDPL/SAM/electrode interface by ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. Although Ph2-IDPL transistors containing the SAM showed a higher on/off ratio or mobility than a previously reported device without the buffer layer, there was a trade-off between on/off ratio and mobility. Our results suggest that biradical molecules are promising candidates for use in low-power inverters.

  4. Diffusion of magnetic field via turbulent reconnection

    NASA Astrophysics Data System (ADS)

    Santos de Lima, Reinaldo; Lazarian, Alexander; de Gouveia Dal Pino, Elisabete M.; Cho, Jungyeon

    2010-05-01

    The diffusion of astrophysical magnetic fields in conducting fluids in the presence of turbulence depends on whether magnetic fields can change their topology via reconnection in highly conducting media. Recent progress in understanding fast magnetic reconnection in the presence of turbulence is reassuring that the magnetic field behavior in computer simulations and turbulent astrophysical environments is similar, as far as magnetic reconnection is concerned. This makes it meaningful to perform MHD simulations of turbulent flows in order to understand the diffusion of magnetic field in astrophysical environments. Our studies of magnetic field diffusion in turbulent medium reveal interesting new phenomena. First of all, our 3D MHD simulations initiated with anti-correlating magnetic field and gaseous density exhibit at later times a de-correlation of the magnetic field and density, which corresponds well to the observations of the interstellar media. While earlier studies stressed the role of either ambipolar diffusion or time-dependent turbulent fluctuations for de-correlating magnetic field and density, we get the effect of permanent de-correlation with one fluid code, i.e. without invoking ambipolar diffusion. In addition, in the presence of gravity and turbulence, our 3D simulations show the decrease of the magnetic flux-to-mass ratio as the gaseous density at the center of the gravitational potential increases. We observe this effect both in the situations when we start with equilibrium distributions of gas and magnetic field and when we follow the evolution of collapsing dynamically unstable configurations. Thus the process of turbulent magnetic field removal should be applicable both to quasi-static subcritical molecular clouds and cores and violently collapsing supercritical entities. The increase of the gravitational potential as well as the magnetization of the gas increases the segregation of the mass and magnetic flux in the saturated final state of the

  5. Diffuse spreading of inhomogeneities in the ionospheric dusty plasma

    SciTech Connect

    Shalimov, S. L.; Kozlovsky, A.

    2015-08-15

    According to results of sounding of the lower ionosphere at altitudes of about 100 km, the duration of radio reflections from sufficiently dense ionized meteor trails, which characterizes their lifetime, can reach a few tens of seconds to several tens of minutes. This is much longer than the characteristic spreading time (on the order of fractions of a second to several seconds) typical in meteor radar measurements. The presence of dust in the lower ionosphere is shown to affect the ambipolar diffusion coefficient, which determines the spreading of plasma inhomogeneities. It is found that the diffusion coefficient depends substantially on the charge and size of dust grains, which allows one to explain the results of ionospheric sounding.

  6. F and CF3 substituted solution processable oligo para-phenylenevinylene for ambipolar and hole-transporting organic field effect transistors

    NASA Astrophysics Data System (ADS)

    Chini, Mrinmoy Kumar; Das, Chayanika; Chatterjee, Shyambo

    2016-07-01

    We have synthesized benzotrifluoromethyl group substituted para-phenylenevinylene oligomer (denoted as PI) and a cooligomer (denoted as PII) by Gilch polymerization route. The ambipolar field-effect transistor (FET) material PI shows hole and electron mobility 1 × 10-4 cm2 V-1 s-1 and 2 × 10-5 cm2 V-1 s-1 respectively. PII shows only hole mobility as high as 0.05 cm2 V-1 s-1 as p-type material. This work highlights the progress of hole-transporting as well as ambipolar material for para-phenylenevinylene derivatives. The results are enlightened on the basis of presence of electronegative substituents and structural modification of the oligomer backbone.

  7. Discharge regime of non-ambipolarity with a self-induced steady-state magnetic field in plasma sources with localized radio-frequency power deposition

    SciTech Connect

    Shivarova, A. Lishev, St.; Todorov, D.; Paunska, Ts.

    2015-10-15

    Involving the idea for the Biermann effect known from space physics as well as recent discussions on non-ambipolarity of the electron and ion fluxes in low-pressure discharges, the study builds the discharge pattern in a source with localized RF power deposition outside the region of high electron density. A vortex dc current flowing in an RF discharge and a steady-state magnetic field induced by this current govern the discharge behavior. Owing to a shift in the positions of the electron-density and plasma-potential maxima, the dc current is driven with the purpose of keeping the conservativity of the dc field in the discharge. The results present the spatial structure of a discharge in a regime of non-ambipolarity of the electron and ion fluxes, including its modifications by the magnetic field.

  8. Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

    PubMed

    Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

    2015-07-28

    High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances. PMID:26083550

  9. Effect of asymmetrical double-pockets and gate-drain underlap on Schottky barrier tunneling FET: Ambipolar conduction vs. high frequency performance

    NASA Astrophysics Data System (ADS)

    Shaker, Ahmed; Ossaimee, Mahmoud; Zekry, A.

    2016-08-01

    In this paper, a proposed structure based on asymmetrical double pockets SB-TFET with gate-drain underlap is presented. 2D extensive modeling and simulation, using Silvaco TCAD, were carried out to study the effect of both underlap length and pockets' doping on the transistor performance. It was found that the underlap from the drain side suppresses the ambipolar conduction and doesn't enhance the high-frequency characteristics. The enhancement of the high-frequency characteristics could be realized by increasing the doping of the drain pocket over the doping of the source pocket. An optimum choice was found which gives the conditions of minimum ambipolar conduction, maximum ON current and maximum cut-off frequency. These enhancements render the device more competitive as a nanometer transistor.

  10. Drift and diffusion of spin and charge density waves in a two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Yang, Luyi; Koralek, J. D.; Orenstein, J.; Tibbetts, D. R.; Reno, J. L.; Lilly, M. P.

    2011-03-01

    We use transient grating spectroscopy (TGS) to study the persistent spin helix (PSH) state and electron-hole density wave (EHDW) in a 2D electron gas in the presence of an in-plane electric field parallel to the wavevector of the PSH or EHDW. By directly measuring the phase, we can measure the PSH and EHDW displacement with 10 nm spatial and sub-picosecond time resolution. We obtain both the spin diffusion and mobility and ambipolar diffusion and mobility from the TGS measurements of PSH and EHDW, respectively. The spin transresistivity extracted from the spin diffusion is in excellent agreement with the RPA theory of spin Coulomb drag (SCD). The spin mobility data indicate that SCD may also play a role in the spin wave drifting process. From the ambipolar diffusion and mobility, we obtain the transresistivity of electrons and holes in the same layer, which is much stronger than is typically seen in the conventional Coulomb drag experiments on coupled quantum wells.

  11. Solution-Processed Ambipolar Organic Thin-Film Transistors by Blending p- and n-Type Semiconductors: Solid Solution versus Microphase Separation.

    PubMed

    Xu, Xiaomin; Xiao, Ting; Gu, Xiao; Yang, Xuejin; Kershaw, Stephen V; Zhao, Ni; Xu, Jianbin; Miao, Qian

    2015-12-30

    Here, we report solid solution of p- and n-type organic semiconductors as a new type of p-n blend for solution-processed ambipolar organic thin film transistors (OTFTs). This study compares the solid-solution films of silylethynylated tetraazapentacene 1 (acceptor) and silylethynylated pentacene 2 (donor) with the microphase-separated films of 1 and 3, a heptagon-embedded analogue of 2. It is found that the solid solutions of (1)x(2)1-x function as ambipolar semiconductors, whose hole and electron mobilities are tunable by varying the ratio of 1 and 2 in the solid solution. The OTFTs of (1)0.5(2)0.5 exhibit relatively balanced hole and electron mobilities comparable to the highest values as reported for ambipolar OTFTs of stoichiometric donor-acceptor cocrystals and microphase-separated p-n bulk heterojunctions. The solid solution of (1)0.5(2)0.5 and the microphase-separated blend of 1:3 (0.5:0.5) in OTFTs exhibit different responses to light in terms of absorption and photoeffect of OTFTs because the donor and acceptor are mixed at molecular level with π-π stacking in the solid solution. PMID:25886029

  12. Nano-needle structured, ambipolar high electrical conductivity SnOx (x ≤ 1) thin films for infrared optoelectronics

    NASA Astrophysics Data System (ADS)

    Wong, Andrew; Wang, Xiaoxin; Liu, Jifeng

    2015-03-01

    SnO has become an important earth-abundant transparent conductive oxide (TCO) with applications not only in photovoltaics but also in electrodes for energy storage. For optoelectronic applications, low fabrication temperature, high electrical conductivity, and low optical losses are highly desirable. This study presents self-assembled, ambipolar (i.e., n and p-type) nano-needle structured SnOx (x ≤ 1) thin films with high electrical conductivity, low infrared (IR) optical losses, and potentials for effective light trapping. These nano-needle structured SnOx films are fabricated through non-reactive co-sputtering of Sn and SnO2 followed by crystallization annealing at low temperatures <250 °C. The crystallization of SnOx thin films occurred rapidly above 210 °C, resulting in SnO nano-needles with average dimensions of 1 μm long, 0.1 μm wide, and 0.15 μm thick that are interspersed with Sn nanocrystals. The optical scattering from these nanostructures can be utilized for light trapping in thin film absorbers. We also found that laser pre-patterning enabled control over nano-needle crystal size and growth directions. The electrical conductivity of 1500-2000 S/cm is comparable to state-of-the-art SnO2:F TCOs while the fabrication temperature is reduced by ˜200 °C, enabling a broader range of applications, such as optoelectronics on flexible substrates. Hall effect measurements show an intriguing ambipolar behavior depending on the annealing ambient. Especially, a strong p-type conductivity with a hole concentration of p ˜ 5 × 1021 cm-3 and mobility μp ˜ 2 cm2 V-1 s-1 is obtained in a weak oxidizing ambient. Such a high p-type conductivity is particularly rare in TCOs, and it offers potential applications in bipolar oxide semiconductor devices. Optical measurements showed a low absorption loss of <3% in a broad IR wavelength regime of λ = 1100-2500 nm for p-type SnOx, suggesting that these nano-needle structured SnOx TCOs can be engineered to enhance low

  13. Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter

    NASA Astrophysics Data System (ADS)

    Park, Junsu; Kim, Minseok; Yeom, Seung-Won; Ha, Hyeon Jun; Song, Hyenggun; Jhon, Young Min; Kim, Yun-Hi; Ju, Byeong-Kwon

    2016-06-01

    We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm2 V‑1 s‑1 for the p-channel and 0.027 cm2 V‑1 s‑1 for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.

  14. Optically Induced PN Junction Diode and Photovoltaic Response on Ambipolar MoSe2 Field-effect Transistor

    NASA Astrophysics Data System (ADS)

    Pradhan, Nihar; Lu, Zhengguang; Rhodes, Daniel; Terrones, Mauricio; Smirnov, Dmitry; Balicas, Luis

    2015-03-01

    Transition metal dichalcogenides (TMDs) have emerged as an attractive material for electronic and optoelectronic devices due to their sizable band gap, flexibility and reduced dimensionality, which makes them promising candidates for applications in translucent optoelectronics components, such as solar cells and light emitting diodes. Here, we present an optically induced diode like response and concomitant photovoltaic effect in few-atomic layers molybdenum diselenide (MoSe2) field-effect transistors. Compared to recently reported PN junctions based on TMDs, ambipolar MoSe2 shows nearly ideal diode rectification under illumination, with a sizable photovoltaic efficiency. The observed light induced diode response under fixed gate voltage, yields a maximum open circuit voltage 0.28V and short circuit current 230nA at 30uW incident laser power. The sense of current rectification can be altered by changing the polarity of the applied gate voltage (Vbg) . At Vbg = 0V the highest electrical power obtained is 175pW corresponding to a maximum photovoltaic efficiency of 0.01%. These values increased to 11nW and 0.05% under a Vbg = -7.5V. At an excitation voltage 1V we observed maximum photocurrent responsivity surpassing 100mA/W with corresponding external quantum efficiency ~ 30%.

  15. A two-dimensional π–d conjugated coordination polymer with extremely high electrical conductivity and ambipolar transport behaviour

    PubMed Central

    Huang, Xing; Sheng, Peng; Tu, Zeyi; Zhang, Fengjiao; Wang, Junhua; Geng, Hua; Zou, Ye; Di, Chong-an; Yi, Yuanping; Sun, Yimeng; Xu, Wei; Zhu, Daoben

    2015-01-01

    Currently, studies on organic two-dimensional (2D) materials with special optic-electronic properties are attracting great research interest. However, 2D organic systems possessing promising electrical transport properties are still rare. Here a highly crystalline thin film of a copper coordination polymer, Cu-BHT (BHT=benzenehexathiol), is prepared via a liquid–liquid interface reaction between BHT/dichloromethane and copper(II) nitrate/H2O. The morphology and structure characterization reveal that this film is piled up by nanosheets of 2D lattice of [Cu3(C6S6)]n, which is further verified by quantum simulation. Four-probe measurements show that the room temperature conductivity of this material can reach up to 1,580 S cm−1, which is the highest value ever reported for coordination polymers. Meanwhile, it displays ambipolar charge transport behaviour and extremely high electron and hole mobilities (99 cm2 V−1 s−1 for holes and 116 cm2 V−1 s−1 for electrons) under field-effect modulation. PMID:26074272

  16. Microcrystallization of a Solution-Processable Organic Semiconductor in Capillaries for High-Performance Ambipolar Field-Effect Transistors.

    PubMed

    Watanabe, Satoshi; Fujita, Takuma; Ribierre, Jean-Charles; Takaishi, Kazuto; Muto, Tsuyoshi; Adachi, Chihaya; Uchiyama, Masanobu; Aoyama, Tetsuya; Matsumoto, Mutsuyoshi

    2016-07-13

    We report on the use of microcrystallization in capillaries to fabricate patterned crystalline microstructures of the low-bandgap ambipolar quinoidal quaterthiophene derivative (QQT(CN)4) from a chloroform solution. Aligned needle-shaped QQT(CN)4 crystals were formed in thin film microstructures using either open- or closed- capillaries made of polydimethylsiloxane (PDMS). Their charge transport properties were evaluated in a bottom-gate top-contact transistor configuration. Hole and electron mobilities were found to be as high as 0.17 and 0.083 cm(2) V(-1) s(-1), respectively, approaching the values previously obtained in individual QQT(CN)4 single crystal microneedles. It was possible to control the size of the needle crystals and the microline arrays by adjusting the structure of the PDMS mold and the concentration of QQT(CN)4 solution. These results demonstrate that the microcrystallization in capillaries technique can be used to simultaneously pattern organic needle single crystals and control the microcrystallization processes. Such a simple and versatile method should be promising for the future development of high-performance organic electronic devices. PMID:27150559

  17. High-performance ambipolar self-assembled Au/Ag nanowire based vertical quantum dot field effect transistor.

    PubMed

    Song, Xiaoxian; Zhang, Yating; Zhang, Haiting; Yu, Yu; Cao, Mingxuan; Che, Yongli; Wang, Jianlong; Dai, Haitao; Yang, Junbo; Ding, Xin; Yao, Jianquan

    2016-10-01

    Most lateral PbSe quantum dot field effect transistors (QD FETs) show a low on current/off current (I on/I off) ratio in charge transport measurements. A new strategy to provide generally better performance is to design PbSe QD FETs with vertical architecture, in which the structure parameters can be tuned flexibly. Here, we fabricated a novel room-temperature operated vertical quantum dot field effect transistor with a channel of 580 nm, where self-assembled Au/Ag nanowires served as source transparent electrodes and PbSe quantum dots as active channels. Through investigating the electrical characterization, the ambipolar device exhibited excellent characteristics with a high I on/I off current ratio of about 1 × 10(5) and a low sub-threshold slope (0.26 V/decade) in the p-type regime. The all-solution processing vertical architecture provides a convenient way for low cost, large-area integration of the device. PMID:27578613

  18. Field-Effect Modulation of Ambipolar Doping and Domain Wall Band Alignment in P-type Vanadium Dioxide Nanowires

    NASA Astrophysics Data System (ADS)

    Hou, Yasen; Peng, Xingyue; Yang, Yiming; Yu, Dong

    The sub-picosecond metal-insulator phase transition in vanadium dioxide (VO2) has attracted extensive attention with potential applications in ultrafast Mott transistors. However, the development of VO2-based transistors lags behind, owing to the lack of an efficient and hysteresis-free electrostatic doping control. Here we report the first synthesis of p-type single crystalline VO2nanowires via catalyst-free chemical vapor deposition. The p-type doping was unambiguously confirmed by both solid and electrochemical gating methods, and further evidenced by the scanning photocurrent microscopic measurements. Interestingly, we observed that the photocurrent spot polarity at the metal-insulator domain walls was reversibly switched by electrochemical gating, which indicates a band bending flipping. Furthermore, we eliminated the common hysteresis in gate sweep and greatly shortened the transistor response time via a hybrid gating method, which combines the merits of liquid ionic and solid gating. The capability of efficient field effect modulation of ambipolar conduction and band alignment offers new opportunities on understanding the phase transition mechanism and enables novel electronic applications based on VO2.

  19. Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

    PubMed Central

    Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P.

    2014-01-01

    Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials. PMID:24810663

  20. Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter.

    PubMed

    Park, Junsu; Kim, Minseok; Yeom, Seung-Won; Ha, Hyeon Jun; Song, Hyenggun; Min Jhon, Young; Kim, Yun-Hi; Ju, Byeong-Kwon

    2016-06-01

    We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm(2) V(-1) s(-1) for the p-channel and 0.027 cm(2) V(-1) s(-1) for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area. PMID:27114463

  1. A two-dimensional π-d conjugated coordination polymer with extremely high electrical conductivity and ambipolar transport behaviour

    NASA Astrophysics Data System (ADS)

    Huang, Xing; Sheng, Peng; Tu, Zeyi; Zhang, Fengjiao; Wang, Junhua; Geng, Hua; Zou, Ye; di, Chong-An; Yi, Yuanping; Sun, Yimeng; Xu, Wei; Zhu, Daoben

    2015-06-01

    Currently, studies on organic two-dimensional (2D) materials with special optic-electronic properties are attracting great research interest. However, 2D organic systems possessing promising electrical transport properties are still rare. Here a highly crystalline thin film of a copper coordination polymer, Cu-BHT (BHT=benzenehexathiol), is prepared via a liquid-liquid interface reaction between BHT/dichloromethane and copper(II) nitrate/H2O. The morphology and structure characterization reveal that this film is piled up by nanosheets of 2D lattice of [Cu3(C6S6)]n, which is further verified by quantum simulation. Four-probe measurements show that the room temperature conductivity of this material can reach up to 1,580 S cm-1, which is the highest value ever reported for coordination polymers. Meanwhile, it displays ambipolar charge transport behaviour and extremely high electron and hole mobilities (99 cm2 V-1 s-1 for holes and 116 cm2 V-1 s-1 for electrons) under field-effect modulation.

  2. On the diffusion of free carriers in {beta}-rhombohedral boron

    SciTech Connect

    Werheit, H. . E-mail: helmut.werheit@koeln.de; Moldenhauer, A.

    2006-09-15

    To determine the diffusion of untrapped carriers in {beta}-rhombohedral boron, we constructed a feedback pico-ammeter based on pulse integration technique. This enabled measuring deviations from the bias in a 10{sup 9}{omega} sample in the order of 1nA with 0.7ms time resolution. For the first time, we obtained the drift velocity of optically generated untrapped electron-hole pairs 106(20)cms{sup -1} yielding for the band-determined diffusion coefficient D=12(4)cm{sup 2}s{sup -1} and for the carrier mobility {mu}{sub ambipolar}=565(120)cm{sup 2}V{sup -1}s{sup -1}. Fitting Fick's second law to the measured trap-determined dispersion of carriers yields the ambipolar diffusion coefficient D*=0.043(14) and 0.28(10)cm{sup 2}s{sup -1} at 260 and 340K, respectively. The thermal activation energy of 0.18eV agrees with the well-known trapping levels in {beta}-rhombohedral boron.

  3. Holographic diffusers

    NASA Astrophysics Data System (ADS)

    Wadle, Stephen; Wuest, Daniel; Cantalupo, John; Lakes, Roderic S.

    1994-01-01

    Holographic diffusers are prepared using silver halide (Agfa 8E75 and Kodak 649F) and photopolymer (Polaroid DMP 128 and DuPont 600, 705, and 150 series) media. It is possible to control the diffusion angle in three ways: by selection of the properties of the source diffuser, by control of its subtended angle, and by selection of the holographic medium. Several conventional diffusers based on refraction or scattering of light are examined for comparison.

  4. Diffusion MRI

    NASA Astrophysics Data System (ADS)

    Fukuyama, Hidenao

    Recent advances of magnetic resonance imaging have been described, especially stressed on the diffusion sequences. We have recently applied the diffusion sequence to functional brain imaging, and found the appropriate results. In addition to the neurosciences fields, diffusion weighted images have improved the accuracies of clinical diagnosis depending upon magnetic resonance images in stroke as well as inflammations.

  5. Driving voltage reduction in white organic light-emitting devices from selectively doping in ambipolar blue-emitting layer

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Hung; Lin, Chi-Feng; Lee, Jiun-Haw

    2007-11-01

    White organic light-emitting devices (OLEDs) consisting of ambipolar 9,10-bis(2'-naphthyl) anthracene (ADN) as a host of blue-emitting layer (EML) were investigated. A thin codoped layer of yellow 5,6,11,12-Tetraphenylnaphthacene (rubrene) served as a probe for detecting the position of maximum recombination rate in the 4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl (DPAVBi) doped-ADN EML. Due to the energy barrier and bipolar carrier transport, the maximum recombination rate was found to be close to but not exactly at the interface of the hole-transporting layer and the EML. With appropriate tuning in the thickness, position, and dopant concentrations of the codoped layer (rubrene:DPAVBi:ADN) in the EML, the device driving voltage decreased by 21.7%, nearly 2 V in reduction, due to the increased recombination current from the faster exciton relaxation induced by the yellow dopants. Among the advantages of introducing the codoped layer over conventional single-doped layers are the elimination of the trapping effect to avoid increasing the device driving voltage, the alleviation of the dependence of the recombination zone on the applied voltage for improving color stability, and the utilization of excitons in a more efficient way to enhance device efficiency. Without using any electrically conductive layers such as the p-i-n structure, we were able to successfully generate 112 cd/m2 at 4 V from our white OLED simply by engineering the structure of the EML.

  6. End-boundary sheath potential, electron and ion energy distribution in the low-pressure non-ambipolar electron plasma

    NASA Astrophysics Data System (ADS)

    Chen, Lee; Chen, Zhiying; Funk, Merritt

    2013-12-01

    The end-boundary floating-surface sheath potential, electron and ion energy distribution functions (EEDf, IEDf) in the low-pressure non-ambipolar electron plasma (NEP) are investigated. The NEP is heated by an electron beam extracted from an inductively coupled electron-source plasma (ICP) through a dielectric injector by an accelerator located inside the NEP. This plasma's EEDf has a Maxwellian bulk followed by a broad energy continuum connecting to the most energetic group with energies around the beam energy. The NEP pressure is 1-3 mTorr of N2 and the ICP pressure is 5-15 mTorr of Ar. The accelerator is biased positively from 80 to 600 V and the ICP power range is 200-300 W. The NEP EEDf and IEDf are determined using a retarding field energy analyser. The EEDf and IEDf are measured at various NEP pressures, ICP pressures and powers as a function of accelerator voltage. The accelerator current and sheath potential are also measured. The IEDf reveals mono-energetic ions with adjustable energy and it is proportionally controlled by the sheath potential. The NEP end-boundary floating surface is bombarded by a mono-energetic, space-charge-neutral plasma beam. When the injected energetic electron beam is adequately damped by the NEP, the sheath potential is linearly controlled at almost a 1 : 1 ratio by the accelerator voltage. If the NEP parameters cannot damp the electron beam sufficiently, leaving an excess amount of electron-beam power deposited on the floating surface, the sheath potential will collapse and become unresponsive to the accelerator voltage.

  7. Charge collected by diffusion from an ion track under mixed boundary conditions

    NASA Technical Reports Server (NTRS)

    Edmonds, Larry D.

    1991-01-01

    Charge-carrier diffusion from an ion track in a silicon substrate at least a few hundred microns thick is analyzed. The substrate upper surface is treated as reflective except for a small section, intended to represent a reverse-biased junction, which is treated as a sink. Total charge collected by the sink is calculated by assuming transport to be governed by an ambipolar diffusion equation with temporally constant and spatially uniform carrier lifetime and diffusion coefficient. Present results apply to a normally incident track but could easily be generalized to arbitrary track direction. The collected charge is found to depend on track length and on the electrostatic capacitance, rather than the area, of the sink. Theoretical predictions are compared to the results of a numerical simulation called the Poisson and Continuity Equation Solver (PISCES) for three cases and are found to agree within a factor of two in the worst case.

  8. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

    PubMed

    Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

    2015-08-12

    For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics. PMID:26189702

  9. Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template

    SciTech Connect

    Wongsaeng, Chalao; Singjai, Pisith

    2014-04-07

    Ambipolar field effect transistors based on a single-walled carbon nanotube (SWNT) network formed on a gold nanoparticle (AuNP) template with polyvinyl alcohol as a gate insulator were studied by measuring the current–gate voltage characteristics. It was found that the mobilities of holes and electrons increased with increasing AuNP number density. The disturbances in the flow pattern of the carbon feedstock in the chemical vapor deposition growth that were produced by the AuNP geometry, resulted in the differences in the crystallinity and the diameter, as well as the changes in the degree of the semiconductor behavior of the SWNTs.

  10. Study on copper phthalocyanine and perylene-based ambipolar organic light-emitting field-effect transistors produced using neutral beam deposition method

    SciTech Connect

    Kim, Dae-Kyu; Oh, Jeong-Do; Shin, Eun-Sol; Seo, Hoon-Seok; Choi, Jong-Ho

    2014-04-28

    The neutral cluster beam deposition (NCBD) method has been applied to the production and characterization of ambipolar, heterojunction-based organic light-emitting field-effect transistors (OLEFETs) with a top-contact, multi-digitated, long-channel geometry. Organic thin films of n-type N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and p-type copper phthalocyanine were successively deposited on the hydroxyl-free polymethyl-methacrylate (PMMA)-coated SiO{sub 2} dielectrics using the NCBD method. Characterization of the morphological and structural properties of the organic active layers was performed using atomic force microscopy and X-ray diffraction. Various device parameters such as hole- and electron-carrier mobilities, threshold voltages, and electroluminescence (EL) were derived from the fits of the observed current-voltage and current-voltage-light emission characteristics of OLEFETs. The OLEFETs demonstrated good field-effect characteristics, well-balanced ambipolarity, and substantial EL under ambient conditions. The device performance, which is strongly correlated with the surface morphology and the structural properties of the organic active layers, is discussed along with the operating conduction mechanism.

  11. Knudsen Reactivity Reduction: Kinetic Theory of Diffusion Process

    NASA Astrophysics Data System (ADS)

    Nelson, Eric; Dodd, Evan; Molvig, Kim; Albright, Brian; Hoffman, Nelson; Zimmerman, George; Williams, Ed

    2012-10-01

    Previous work that found significant fusion reactivity reduction due to Knudsen layer losses [1], utilized a twice simplified treatment of the loss process that first went to the diffusion limit of the transport and then replaced the spatial kinetic diffusion operator by a local loss process. The derivation of kinetic diffusion utilized a stochastic differential equation technique to show that convection in combination with pitch-angle scattering yields spatial diffusion asymptotically over long time and spatial intervals. The same technique can be extended to include the independent energy scattering stochastic process. For the linear Fokker-Planck equation that governs the tail ions this gives a very efficient (particle like) numerical technique that can solve the complete ion tail problem in the three phase space dimensions of pitch-angle, energy, and spatial coordinate. The method allows inclusion of a temperature gradient and specified ambipolar electric fields. We present simulation results of the depleted tail distributions and fusion reactivities, and compare with the predictions of the simple local loss method.[4pt] [1] Kim Molvig, Nelson N. Hoffman, Brian J. Albright, Eric M. Nelson, and, Robert J. Webster (submitted to Physical Review Letters, 2012)

  12. Vaneless diffusers

    NASA Astrophysics Data System (ADS)

    Senoo, Y.

    The influence of vaneless diffusers on flow in centrifugal compressors, particularly on surge, is discussed. A vaneless diffuser can demonstrate stable operation in a wide flow range only if it is installed with a backward leaning blade impeller. The circumferential distortion of flow in the impeller disappears quickly in the vaneless diffuser. The axial distortion of flow at the diffuser inlet does not decay easily. In large specific speed compressors, flow out of the impeller is distorted axially. Pressure recovery of diffusers at distorted inlet flow is considerably improved by half guide vanes. The best height of the vanes is a little 1/2 diffuser width. In small specific speed compressors, flow out of the impeller is not much distorted and pressure recovery can be predicted with one-dimensional flow analysis. Wall friction loss is significant in narrow diffusers. The large pressure drop at a small flow rate can cause the positive gradient of the pressure-flow rate characteristic curve, which may cause surging.

  13. Diffusion barriers

    NASA Technical Reports Server (NTRS)

    Nicolet, M. A.

    1983-01-01

    The choice of the metallic film for the contact to a semiconductor device is discussed. One way to try to stabilize a contact is by interposing a thin film of a material that has low diffusivity for the atoms in question. This thin film application is known as a diffusion barrier. Three types of barriers can be distinguished. The stuffed barrier derives its low atomic diffusivity to impurities that concentrate along the extended defects of a polycrystalline layer. Sacrificial barriers exploit the fact that some (elemental) thin films react in a laterally uniform and reproducible fashion. Sacrificial barriers have the advantage that the point of their failure is predictable. Passive barriers are those most closely approximating an ideal barrier. The most-studied case is that of sputtered TiN films. Stuffed barriers may be viewed as passive barriers whose low diffusivity material extends along the defects of the polycrystalline host.

  14. Diffuse radiation

    NASA Technical Reports Server (NTRS)

    1981-01-01

    A diffuse celestial radiation which is isotropic at least on a course scale were measured from the soft X-ray region to about 150 MeV, at which energy the intensity falls below that of the galactic emission for most galactic latitudes. The spectral shape, the intensity, and the established degree of isotropy of this diffuse radiation already place severe constraints on the possible explanations for this radiation. Among the extragalactic theories, the more promising explanations of the isotropic diffuse emission appear to be radiation from exceptional galaxies from matter antimatter annihilation at the boundaries of superclusters of galaxies of matter and antimatter in baryon symmetric big bang models. Other possible sources for extragalactic diffuse gamma radiation are discussed and include normal galaxies, clusters of galaxies, primordial cosmic rays interacting with intergalactic matter, primordial black holes, and cosmic ray leakage from galaxies.

  15. Self-consistent modeling for estimation of the reduced electric field in a DC excited diffusion controlled CW CO2 laser

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Bhagat, M. S.; Biswas, A. K.; Rana, L. B.; Pakhare, Jagdish; Rawat, B. S.; Kukreja, L. M.

    2016-07-01

    The results of a numerical simulation method that estimate various discharge parameters in the positive column of a DC glow discharge controlled by ambipolar diffusion are presented. The parameters like reduced electric field (E/N), electron temperature, ionization rates, ambipolar diffusion losses and the average gas temperature were numerically evaluated for several mixtures of CO2, N2 and He in low pressure regime. The estimated E/N value which is a primary governing parameter of positive column was verified experimentally using a double probe in diffusion controlled CW CO2 laser for a variety of CO2, N2 and He mixtures. The role of auxiliary ionization source like pulser used for pre-ionization and its effect on the steady state E/N value was also studied. A reasonably good agreement was found between the theoretical and the experimental results. Based on the results of this simulation a zigzag folded, diffusion-cooled, 500 W CW CO2 laser has been designed and developed for research in gas phase nanoparticle synthesis.

  16. The electric wind of Venus: A global and persistent "polar wind"-like ambipolar electric field sufficient for the direct escape of heavy ionospheric ions

    NASA Astrophysics Data System (ADS)

    Collinson, Glyn A.; Frahm, Rudy A.; Glocer, Alex; Coates, Andrew J.; Grebowsky, Joseph M.; Barabash, Stas; Domagal-Goldman, Shawn D.; Fedorov, Andrei; Futaana, Yoshifumi; Gilbert, Lin K.; Khazanov, George; Nordheim, Tom A.; Mitchell, David; Moore, Thomas E.; Peterson, William K.; Winningham, John D.; Zhang, Tielong L.

    2016-06-01

    Understanding what processes govern atmospheric escape and the loss of planetary water is of paramount importance for understanding how life in the universe can exist. One mechanism thought to be important at all planets is an "ambipolar" electric field that helps ions overcome gravity. We report the discovery and first quantitative extraterrestrial measurements of such a field at the planet Venus. Unexpectedly, despite comparable gravity, we show the field to be five times stronger than in Earth's similar ionosphere. Contrary to our understanding, Venus would still lose heavy ions (including oxygen and all water-group species) to space, even if there were no stripping by the solar wind. We therefore find that it is possible for planets to lose heavy ions to space entirely through electric forces in their ionospheres and such an "electric wind" must be considered when studying the evolution and potential habitability of any planet in any star system.

  17. High performance weak donor-acceptor polymers in thin film transistors: effect of the acceptor on electronic properties, ambipolar conductivity, mobility, and thermal stability.

    PubMed

    Yuen, Jonathan D; Fan, Jian; Seifter, Jason; Lim, Bogyu; Hufschmid, Ryan; Heeger, Alan J; Wudl, Fred

    2011-12-28

    We have studied the electronic, physical, and transistor properties of a family of donor-acceptor polymers consisting of diketopyrrolopyrrole (DPP) coupled with different accepting companion units in order to determine the effects of donor-acceptor interaction. Using the electronically neutral benzene (B), the weakly accepting benzothiadiazole (BT), and the strongly accepting benzobisthiadiazole (BBT), the accepting strength of the companion unit was systematically modulated. All polymers exhibited excellent transistor performance, with mobilities above 0.1 cm(2)V(-1)s(-1), even exceeding 1 cm(2)V(-1)s(-1) for one of the BBT-containing polymers. We find that the BBT is the strongest acceptor, enabling the BBT-containing polymers to be strongly ambipolar. The BBT moiety also strengthens interchain interactions, which provides higher thermal stability and performance for transistors with BBT-containing polymers as the active layer. PMID:22043809

  18. End-boundary sheath potential, Langmuir waves, electron and ion energy distribution in the low pressure DC powered Non-ambipolar Electron Plasma

    NASA Astrophysics Data System (ADS)

    Chen, Lee; Chen, Zhiying; Funk, Merritt

    2013-09-01

    The non-ambipolar electron plasma (NEP) is heated by electron beam extracted from the electron-source Ar plasma through a dielectric injector by an accelerator located inside NEP. NEP pressure is in the 1-3mTorr range of N2 and its accelerator voltage varied from VA = + 80 to VA = + 600V. The non-ambipolar beam-current injected into NEP is in the range of 10s Acm-2 and it heats NEP through beam-plasma instabilities. Its EED f has a Maxwellian bulk followed by a broad energy-continuum connecting to the most energetic group with energies above the beam-energy. The remnant of the injected electron-beam power terminates at the NEP end-boundary floating-surface setting up sheath potentials from VS = 80 to VS = 580V in response to the applied values of VA. The floating-surface is bombarded by a space-charge neutral plasma-beam whose IED f is near mono-energetic. When the injected electron-beam power is adequately damped by NEP, its end-boundary floating-surface VS can be linearly controlled at almost 1:1 ratio by VA. NEP does not have an electron-free sheath; its ``sheath'' is a widen presheath that consists of a thermal presheath followed by an ``anisotropic'' presheath, leading up to the end-boundary floating-surface. Its ion-current of the plasma-beam is much higher than what a conventional thermal presheath can supply. If the NEP parameters cannot damp the electron beam power sufficiently, VS will collapse and becomes irresponsive to VA.

  19. Demonstrating Diffusion

    ERIC Educational Resources Information Center

    Foy, Barry G.

    1977-01-01

    Two demonstrations are described. Materials and instructions for demonstrating movement of molecules into cytoplasm using agar blocks, phenolphthalein, and sodium hydroxide are given. A simple method for demonstrating that the rate of diffusion of a gas is inversely proportional to its molecular weight is also presented. (AJ)

  20. Defusing Diffusion

    ERIC Educational Resources Information Center

    Dou, Remy; Hogan, DaNel; Kossover, Mark; Spuck, Timothy; Young, Sarah

    2013-01-01

    Diffusion has often been taught in science courses as one of the primary ways by which molecules travel, particularly within organisms. For years, classroom teachers have used the same common demonstrations to illustrate this concept (e.g., placing drops of food coloring in a beaker of water). Most of the time, the main contributor to the motion…

  1. Relativistic diffusion

    NASA Astrophysics Data System (ADS)

    Haba, Z.

    2009-02-01

    We discuss relativistic diffusion in proper time in the approach of Schay (Ph.D. thesis, Princeton University, Princeton, NJ, 1961) and Dudley [Ark. Mat. 6, 241 (1965)]. We derive (Langevin) stochastic differential equations in various coordinates. We show that in some coordinates the stochastic differential equations become linear. We obtain momentum probability distribution in an explicit form. We discuss a relativistic particle diffusing in an external electromagnetic field. We solve the Langevin equations in the case of parallel electric and magnetic fields. We derive a kinetic equation for the evolution of the probability distribution. We discuss drag terms leading to an equilibrium distribution. The relativistic analog of the Ornstein-Uhlenbeck process is not unique. We show that if the drag comes from a diffusion approximation to the master equation then its form is strongly restricted. The drag leading to the Tsallis equilibrium distribution satisfies this restriction whereas the one of the Jüttner distribution does not. We show that any function of the relativistic energy can be the equilibrium distribution for a particle in a static electric field. A preliminary study of the time evolution with friction is presented. It is shown that the problem is equivalent to quantum mechanics of a particle moving on a hyperboloid with a potential determined by the drag. A relation to diffusions appearing in heavy ion collisions is briefly discussed.

  2. Relativistic diffusion.

    PubMed

    Haba, Z

    2009-02-01

    We discuss relativistic diffusion in proper time in the approach of Schay (Ph.D. thesis, Princeton University, Princeton, NJ, 1961) and Dudley [Ark. Mat. 6, 241 (1965)]. We derive (Langevin) stochastic differential equations in various coordinates. We show that in some coordinates the stochastic differential equations become linear. We obtain momentum probability distribution in an explicit form. We discuss a relativistic particle diffusing in an external electromagnetic field. We solve the Langevin equations in the case of parallel electric and magnetic fields. We derive a kinetic equation for the evolution of the probability distribution. We discuss drag terms leading to an equilibrium distribution. The relativistic analog of the Ornstein-Uhlenbeck process is not unique. We show that if the drag comes from a diffusion approximation to the master equation then its form is strongly restricted. The drag leading to the Tsallis equilibrium distribution satisfies this restriction whereas the one of the Jüttner distribution does not. We show that any function of the relativistic energy can be the equilibrium distribution for a particle in a static electric field. A preliminary study of the time evolution with friction is presented. It is shown that the problem is equivalent to quantum mechanics of a particle moving on a hyperboloid with a potential determined by the drag. A relation to diffusions appearing in heavy ion collisions is briefly discussed. PMID:19391727

  3. Diffusion bonding

    DOEpatents

    Anderson, Robert C.

    1976-06-22

    1. A method for joining beryllium to beryllium by diffusion bonding, comprising the steps of coating at least one surface portion of at least two beryllium pieces with nickel, positioning a coated surface portion in a contiguous relationship with an other surface portion, subjecting the contiguously disposed surface portions to an environment having an atmosphere at a pressure lower than ambient pressure, applying a force upon the beryllium pieces for causing the contiguous surface portions to abut against each other, heating the contiguous surface portions to a maximum temperature less than the melting temperature of the beryllium, substantially uniformly decreasing the applied force while increasing the temperature after attaining a temperature substantially above room temperature, and maintaining a portion of the applied force at a temperature corresponding to about maximum temperature for a duration sufficient to effect the diffusion bond between the contiguous surface portions.

  4. Quantum diffusion

    SciTech Connect

    Habib, S.

    1994-10-01

    We consider a simple quantum system subjected to a classical random force. Under certain conditions it is shown that the noise-averaged Wigner function of the system follows an integro-differential stochastic Liouville equation. In the simple case of polynomial noise-couplings this equation reduces to a generalized Fokker-Planck form. With nonlinear noise injection new ``quantum diffusion`` terms rise that have no counterpart in the classical case. Two special examples that are not of a Fokker-Planck form are discussed: the first with a localized noise source and the other with a spatially modulated noise source.

  5. DIFFUSION PUMP

    DOEpatents

    Levenson, L.

    1963-09-01

    A high-vacuum diffusion pump is described, featuring a novel housing geometry for enhancing pumping speed. An upright, cylindrical lower housing portion is surmounted by a concentric, upright, cylindrical upper housing portion of substantially larger diameter; an uppermost nozzle, disposed concentrically within the upper portion, is adapted to eject downwardly a conical sheet of liquid outwardly to impinge upon the uppermost extremity of the interior wall of the lower portion. Preferably this nozzle is mounted upon a pedestal rising coaxially from within the lower portion and projecting up into said upper portion. (AEC)

  6. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N' -bis(4-trifluoromethylben-zyl) perylene-3,4,9,10-tetracarboxylic diimide

    NASA Astrophysics Data System (ADS)

    Li, Jian-Feng; Chang, Wen-Li; Ou, Gu-Ping; Zhang, Fu-Jia

    2009-07-01

    Fabrication of ambipolar organic field-effect transistors (OFETs) is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized. We select pentacene as a P-type material and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB) as a n-type material in the active layer of the OFETs. The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18 cm2/(V.s) and field-effect electron mobility of 0.031 cm2/(V.s). Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days. The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility. The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.

  7. Self-similar and diffusive expansion of nonextensive plasmas

    SciTech Connect

    Akbari-Moghanjoughi, M.

    2015-03-15

    Exact analytical self-similar solution is presented for free collisionless expansion of a two-component plasma of inertial ions and nonextensive electrons into vacuum, using the generalized nonextensive velocity distribution for electrons. Furthermore, a hydrodynamic model of plasma expansion in the presence of the ambipolar diffusion caused by collisions among the plasma species, such as electrons and ions, is developed and a Fokker-Planck-like generalized diffusion equation for steady-state expansion of a nonextensive electron-ion plasma is derived. For the case of generalized statistics and in the absence of particle diffusion, the density, velocity, electric potential, and field of expansion profiles are exactly obtained and studied in terms of the self-similar parameter. It is found that superthermal electrons lead to an accelerated expansion of plasma compared to that of Maxwellian electrons. It is also revealed that the nonextensivity parameter plays a fundamental role on the density, velocity, electric potential, and field configuration of the expansion. Therefore, one is able to distinguish three different regimes q < 1, q = 1, and q > 1 for expansion corresponding to sub-nonextensive, extensive, and super-nonextensive statistical profiles for electrons, respectively. Current research can provide useful information and suggests techniques for investigation of the involved statistical mechanism on the role of the energetic electron fluid in the expansion of plasma in strong pulsed laser-matter interaction experiments. It is also shown that the particle diffusion expansion mechanism becomes more dominant for relatively large values of the nonextensivity parameter, q.

  8. Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer

    NASA Astrophysics Data System (ADS)

    Mingdong, Yi; Ning, Zhang; Linghai, Xie; Wei, Huang

    2015-10-01

    We fabricated heterojunction organic field-effect transistors (OFETs) using copper phthalocyanine (CuPc) and hexadecafluorophtholocyaninatocopper (F16CuPc) as hole transport layer and electron transport layer, respectively. Compared with F16CuPc based OFETs, the electron field-effect mobility in the heterojunction OFETs increased from 3.1 × 10-3 to 8.7 × 10-3 cm2/(V·s), but the p-type behavior was not observed. To enhanced the hole injection, we modified the source-drain electrodes using the MoO3 buffer layer, and the hole injection can be effectively improved. Eventually, the ambipolar transport characteristics of the CuPc/F16CuPc based OFETs with a MoO3 buffer layer were achieved, and the field-effect mobilities of electron and hole were 2.5 × 10-3 and 3.1 × 10-3 cm2/(V·s), respectively. Project supported by the National Natural Science Foundation of China (Nos. 61475074, 61204095).

  9. Cyano-substituted oligo(p-phenylene vinylene) single-crystal with balanced hole and electron injection and transport for ambipolar field-effect transistors.

    PubMed

    Deng, Jian; Tang, Jia; Xu, Yuanxiang; Liu, Liqun; Wang, Yan; Xie, Zengqi; Ma, Yuguang

    2015-02-01

    High and balanced hole and electron mobilities were achieved in OFETs based on the high photoluminescence of a 1,4-bis(2-cyano-2-phenylethenyl)benzene single-crystal with symmetric electrodes. For electron and hole, the operation voltage in the OFETs based on symmetric gold electrodes was 30 and -20 V, respectively. The accumulation threshold voltage is low enough for the OFETs to operate in an ambipolar model with the source/drain voltage (Vds) around 50 V despite the high injection barrier. The highest electron and hole mobility was 0.745 cm(2) V(-1) s(-1) and 0.239 cm(2) V(-1) s(-1), and the current density reached 90.7 and 27.4 A cm(-2), respectively with an assumed 10 nm accumulation layer. The high mobility comes from the strong π-π interactions. In addition, the highly ordered hydrogen bonding matrix may create an efficient route to pump the charge to the inner layer which can improve the injection ability. PMID:25530541

  10. Theoretical study of stability and charge-transport properties of coronene molecule and some of its halogenated derivatives: A path to ambipolar organic-based materials?

    SciTech Connect

    Sancho-García, J. C. Pérez-Jiménez, A. J.

    2014-10-07

    We have carefully investigated the structural and electronic properties of coronene and some of its fluorinated and chlorinated derivatives, including full periphery substitution, as well as the preferred orientation of the non-covalent dimer structures subsequently formed. We have paid particular attention to a set of methodological details, to first obtain single-molecule magnitudes as accurately as possible, including next the use of modern dispersion-corrected methods to tackle the corresponding non-covalently bound dimers. Generally speaking, this class of compounds is expected to self-assembly in neighboring π-stacks with dimer stabilization energies ranging from –20 to –30 kcal mol{sup −1} at close distances around 3.0–3.3 Å. Then, in a further step, we have also calculated hole and electron transfer rates of some suitable candidates for ambipolar materials, and corresponding charge mobility values, which are known to critically depend on the supramolecular organization of the samples. For coronene and per-fluorinated coronene, we have found high values for their hopping rates, although slightly smaller for the latter due to an increase (decrease) of the reorganization energies (electronic couplings)

  11. Theoretical study of stability and charge-transport properties of coronene molecule and some of its halogenated derivatives: a path to ambipolar organic-based materials?

    PubMed

    Sancho-García, J C; Pérez-Jiménez, A J

    2014-10-01

    We have carefully investigated the structural and electronic properties of coronene and some of its fluorinated and chlorinated derivatives, including full periphery substitution, as well as the preferred orientation of the non-covalent dimer structures subsequently formed. We have paid particular attention to a set of methodological details, to first obtain single-molecule magnitudes as accurately as possible, including next the use of modern dispersion-corrected methods to tackle the corresponding non-covalently bound dimers. Generally speaking, this class of compounds is expected to self-assembly in neighboring π-stacks with dimer stabilization energies ranging from -20 to -30 kcal mol(-1) at close distances around 3.0-3.3 Å. Then, in a further step, we have also calculated hole and electron transfer rates of some suitable candidates for ambipolar materials, and corresponding charge mobility values, which are known to critically depend on the supramolecular organization of the samples. For coronene and per-fluorinated coronene, we have found high values for their hopping rates, although slightly smaller for the latter due to an increase (decrease) of the reorganization energies (electronic couplings). PMID:25296829

  12. Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure.

    PubMed

    Yang, Shengxue; Wang, Cong; Ataca, Can; Li, Yan; Chen, Hui; Cai, Hui; Suslu, Aslihan; Grossman, Jeffrey C; Jiang, Chengbao; Liu, Qian; Tongay, Sefaattin

    2016-02-01

    Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic properties and self-driven photoelectric characteristics. Fabricated heterostructure transistors exhibit forward biased rectifying behavior where the transport is ambipolar with both electron and hole carriers contributing to the overall transport. Under illumination, photoexcited electron-hole pairs are readily separated by large built-in potential formed at the GaTe-MoS2 interface efficiently generating self-driven photocurrent within <10 ms. Overall results suggest that abrupt interfaces between vastly different material systems with different crystal symmetries still allow efficient charge transfer mechanisms at the interface and are attractive for photoswitch, photodetector, and photovoltaic applications because of large built-in potential at the interface. PMID:26796869

  13. N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs

    NASA Astrophysics Data System (ADS)

    Taneja, D.; Sfigakis, F.; Croxall, A. F.; Das Gupta, K.; Narayan, V.; Waldie, J.; Farrer, I.; Ritchie, D. A.

    2016-06-01

    We report the development of a simple and reliable, front-sided-only fabrication technique for n-type ohmic contacts to two-dimensional electron gases (2DEGs) in undoped GaAs/AlGaAs quantum wells. We have adapted the well-established recessed ohmic contacts/insulated metal gate technique for inducing a 2DEG in an undoped triangular well to also work reliably for undoped square quantum wells. Our adaptation involves a change in the procedure for etching the ohmic contact pits to optimise the etch side-wall profile and depth. As an application of our technique, we present a front-side-gated ambipolar field effect transistor (FET), where both 2D electron and hole gases can be induced in the same quantum well. We present results of low-temperature (0.3 K - 4 K) transport measurements of this device, including assessment of the n-type ohmic contact quality. On the basis of our findings, we discuss why the fabrication of these contacts is difficult and how our technique circumvents the challenges.

  14. Theoretical study of stability and charge-transport properties of coronene molecule and some of its halogenated derivatives: A path to ambipolar organic-based materials?

    NASA Astrophysics Data System (ADS)

    Sancho-García, J. C.; Pérez-Jiménez, A. J.

    2014-10-01

    We have carefully investigated the structural and electronic properties of coronene and some of its fluorinated and chlorinated derivatives, including full periphery substitution, as well as the preferred orientation of the non-covalent dimer structures subsequently formed. We have paid particular attention to a set of methodological details, to first obtain single-molecule magnitudes as accurately as possible, including next the use of modern dispersion-corrected methods to tackle the corresponding non-covalently bound dimers. Generally speaking, this class of compounds is expected to self-assembly in neighboring π-stacks with dimer stabilization energies ranging from -20 to -30 kcal mol-1 at close distances around 3.0-3.3 Å. Then, in a further step, we have also calculated hole and electron transfer rates of some suitable candidates for ambipolar materials, and corresponding charge mobility values, which are known to critically depend on the supramolecular organization of the samples. For coronene and per-fluorinated coronene, we have found high values for their hopping rates, although slightly smaller for the latter due to an increase (decrease) of the reorganization energies (electronic couplings).

  15. Diffusion of Magnetic Field and Removal of Magnetic Flux from Clouds Via Turbulent Reconnection

    NASA Astrophysics Data System (ADS)

    Santos-Lima, R.; Lazarian, A.; de Gouveia Dal Pino, E. M.; Cho, J.

    2010-05-01

    The diffusion of astrophysical magnetic fields in conducting fluids in the presence of turbulence depends on whether magnetic fields can change their topology via reconnection in highly conducting media. Recent progress in understanding fast magnetic reconnection in the presence of turbulence reassures that the magnetic field behavior in computer simulations and turbulent astrophysical environments is similar, as far as magnetic reconnection is concerned. This makes it meaningful to perform MHD simulations of turbulent flows in order to understand the diffusion of magnetic field in astrophysical environments. Our studies of magnetic field diffusion in turbulent medium reveal interesting new phenomena. First of all, our three-dimensional MHD simulations initiated with anti-correlating magnetic field and gaseous density exhibit at later times a de-correlation of the magnetic field and density, which corresponds well to the observations of the interstellar media. While earlier studies stressed the role of either ambipolar diffusion or time-dependent turbulent fluctuations for de-correlating magnetic field and density, we get the effect of permanent de-correlation with one fluid code, i.e., without invoking ambipolar diffusion. In addition, in the presence of gravity and turbulence, our three-dimensional simulations show the decrease of the magnetic flux-to-mass ratio as the gaseous density at the center of the gravitational potential increases. We observe this effect both in the situations when we start with equilibrium distributions of gas and magnetic field and when we follow the evolution of collapsing dynamically unstable configurations. Thus, the process of turbulent magnetic field removal should be applicable both to quasi-static subcritical molecular clouds and cores and violently collapsing supercritical entities. The increase of the gravitational potential as well as the magnetization of the gas increases the segregation of the mass and magnetic flux in the

  16. Parallel flow diffusion battery

    DOEpatents

    Yeh, Hsu-Chi; Cheng, Yung-Sung

    1984-08-07

    A parallel flow diffusion battery for determining the mass distribution of an aerosol has a plurality of diffusion cells mounted in parallel to an aerosol stream, each diffusion cell including a stack of mesh wire screens of different density.

  17. Parallel flow diffusion battery

    DOEpatents

    Yeh, H.C.; Cheng, Y.S.

    1984-01-01

    A parallel flow diffusion battery for determining the mass distribution of an aerosol has a plurality of diffusion cells mounted in parallel to an aerosol stream, each diffusion cell including a stack of mesh wire screens of different density.

  18. NIST Diffusion Data Center

    National Institute of Standards and Technology Data Gateway

    NIST Diffusion Data Center (Web, free access)   The NIST Diffusion Data Center is a collection of over 14,100 international papers, theses, and government reports on diffusion published before 1980.

  19. FRACTIONAL PEARSON DIFFUSIONS

    PubMed Central

    Leonenko, Nikolai N.; Meerschaert, Mark M.

    2013-01-01

    Pearson diffusions are governed by diffusion equations with polynomial coefficients. Fractional Pearson diffusions are governed by the corresponding time-fractional diffusion equation. They are useful for modeling sub-diffusive phenomena, caused by particle sticking and trapping. This paper provides explicit strong solutions for fractional Pearson diffusions, using spectral methods. It also presents stochastic solutions, using a non-Markovian inverse stable time change. PMID:23626377

  20. Focused ion beam and field-emission microscopy of metallic filaments in memory devices based on thin films of an ambipolar organic compound consisting of oxadiazole, carbazole, and fluorene units

    USGS Publications Warehouse

    Pearson, Christopher; Bowen, Leon; Lee, Myung Won; Fisher, Alison L.; Linton, Katherine E.; Bryce, Martin R.; Petty, Michael C.

    2013-01-01

    We report on the mechanism of operation of organic thin film resistive memory architectures based on an ambipolar compound consisting of oxadiazole, carbazole, and fluorene units. Cross-sections of the devices have been imaged by electron microscopy both before and after applying a voltage. The micrographs reveal the growth of filaments, with diameters of 50 nm–100 nm, on the metal cathode. We suggest that these are formed by the drift of aluminium ions from the anode and are responsible for the observed switching and negative differential resistance phenomena in the memory devices.

  1. Microscopic Foundation and Simulation of Coupled Carrier-Temperature Diffusions in Semiconductor Lasers

    NASA Technical Reports Server (NTRS)

    Li, J.; Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field. The equations derived above are implemented in various limiting cases to a typical diode laser to study the consequences of nonlinear diffusion and the cross diffusion terms on laser behavior, especially the dynamic behavior of a diode laser under modulation. Detailed results will be presented by comparing with the standard rate equation results.

  2. Microfabricated diffusion source

    DOEpatents

    Oborny, Michael C.; Frye-Mason, Gregory C.; Manginell, Ronald P.

    2008-07-15

    A microfabricated diffusion source to provide for a controlled diffusion rate of a vapor comprises a porous reservoir formed in a substrate that can be filled with a liquid, a headspace cavity for evaporation of the vapor therein, a diffusion channel to provide a controlled diffusion of the vapor, and an outlet to release the vapor into a gas stream. The microfabricated diffusion source can provide a calibration standard for a microanalytical system. The microanalytical system with an integral diffusion source can be fabricated with microelectromechanical systems technologies.

  3. Diffusion on spatial network

    NASA Astrophysics Data System (ADS)

    Hui, Zi; Tang, Xiaoyue; Li, Wei; Greneche, Jean-Marc; Wang, Qiuping A.

    2015-04-01

    In this work, we study the problem of diffusing a product (idea, opinion, disease etc.) among agents on spatial network. The network is constructed by random addition of nodes on the planar. The probability for a previous node to be connected to the new one is inversely proportional to their spatial distance to the power of α. The diffusion rate between two connected nodes is inversely proportional to their spatial distance to the power of β as well. Inspired from the Fick's first law, we introduce the diffusion coefficient to measure the diffusion ability of the spatial network. Using both theoretical analysis and Monte Carlo simulation, we get the fact that the diffusion coefficient always decreases with the increasing of parameter α and β, and the diffusion sub-coefficient follows the power-law of the spatial distance with exponent equals to -α-β+2. Since both short-range diffusion and long-range diffusion exist, we use anomalous diffusion method in diffusion process. We get the fact that the slope index δ in anomalous diffusion is always smaller that 1. The diffusion process in our model is sub-diffusion.

  4. UPDATING APPLIED DIFFUSION MODELS

    EPA Science Inventory

    Most diffusion models currently used in air quality applications are substantially out of date with understanding of turbulence and diffusion in the planetary boundary layer. Under a Cooperative Agreement with the Environmental Protection Agency, the American Meteorological Socie...

  5. Diffusion bonding aeroengine components

    NASA Astrophysics Data System (ADS)

    Fitzpatrick, G. A.; Broughton, T.

    1988-10-01

    The use of diffusion bonding processes at Rolls-Royce for the manufacture of titanium-alloy aircraft engine components and structures is described. A liquid-phase diffusion bonding process called activated diffusion bonding has been developed for the manufacture of the hollow titanium wide chord fan blade. In addition, solid-state diffusion bonding is being used in the manufacture of hollow vane/blade airfoil constructions mainly in conjunction with superplastic forming and hot forming techniques.

  6. Reduce Confusion about Diffusion.

    ERIC Educational Resources Information Center

    Hebrank, Mary R.

    1997-01-01

    Presents activities that allow students to explore the fundamental but poorly understood concept of diffusion by appealing to their kinesthetic senses first, then challenging their analytical skills as they try to deduce the mathematical principle involved. Presents a computer simulation of diffusion and discusses diffusion's limitations and…

  7. Diffusion of uranium hexafluoride

    NASA Astrophysics Data System (ADS)

    Winkelmann, J.

    This document is part of Subvolume A `Gases in Gases, Liquids and their Mixtures' of Volume 15 `Diffusion in Gases, Liquids and Electrolytes' of Landolt-Börnstein Group IV `Physical Chemistry'. It is part of the chapter of the chapter `Diffusion in Pure Gases' and contains data on diffusion of uranium hexafluoride

  8. Diffusion Strategy Guide.

    ERIC Educational Resources Information Center

    McCutcheon, James R.; Sanders, John R.

    A methodology is presented for planning and managing the spread of educational innovations. The first portion of the guide develops a theoretical framework for diffusion which summarizes and capitalizes on the latest marketing and on the latest marketing and diffusion research findings. Major stages in the diffusion paradigm discussed include…

  9. Handbook on atmospheric diffusion

    SciTech Connect

    Hanna, S.R.; Briggs, G.A.; Hosker, R.P. Jr.

    1982-01-01

    Basic meteorological concepts are covered as well as plume rise, source effects, and diffusion models. Chapters are included on cooling tower plumes and urban diffusion. Suggestions are given for calculating diffusion in special situations, such as for instantaneous releases over complex terrain, over long distances, and during times when chemical reactions or dry or wet deposition are important. (PSB)

  10. Tunneling Characteristics Depending on Schottky Barriers and Diffusion Current in SiOC.

    PubMed

    Oh, Teresa; Kim, Chy Hyung

    2016-02-01

    To obtain a diffusion current in SiOC, the aluminum doped zinc oxide films were deposited on SiOC/Si wafer by a RF magnetron sputtering. All the X-ray patterns of the SiOC films showed amorphous phases. The level of binding energy of Si atoms will lead to an additional potential modulation by long range Coulombic and covalent interactions with oxygen ions. The growth of the AZO film was affected by the characteristics of SiOC, resulting in similar trends in XPS spectra and a shift to higher AZO lattice d values than the original AZO d values in XRD analyses. The charges trapped by the defects at the interlayer between AZO and SiOC films induced the decreased mobility of carriers. In the absence of trap charges, AZO grown on SiOC film such as the sample prepared at O2 = 25 or 30 sccm, which has low charge carrier concentration and high mobility, showed high mobility in an ambipolar characteristic of oxide semiconductor due to the tunneling effect and diffusion current. The structural matching of an interface between AZO and amorphous SiOC enhanced the height of Schottky Barrier (SB), and then the mobility was increased by the tunneling effect from band to band through the high SB. PMID:27433737

  11. Transport and trapping of dust particles in a potential well created by inductively coupled diffused plasmas.

    PubMed

    Choudhary, Mangilal; Mukherjee, S; Bandyopadhyay, P

    2016-05-01

    A versatile linear dusty (complex) plasma device is designed to study the transport and dynamical behavior of dust particles in a large volume. Diffused inductively coupled plasma is generated in the background of argon gas. A novel technique is used to introduce the dust particles in the main plasma by striking a secondary direct current glow discharge. These dust particles are found to get trapped in an electrostatic potential well, which is formed due to the combination of the ambipolar electric field caused by diffusive plasma and the field produced by the charged glass wall of the vacuum chamber. According to the requirements, the volume of the dust cloud can be controlled very precisely by tuning the plasma and discharge parameters. The present device can be used to address the underlying physics behind the transport of dust particles, self-excited dust acoustic waves, and instabilities. The detailed design of this device, plasma production and characterization, trapping and transport of the dust particle, and some of the preliminary experimental results are presented. PMID:27250421

  12. Transport and trapping of dust particles in a potential well created by inductively coupled diffused plasmas

    NASA Astrophysics Data System (ADS)

    Choudhary, Mangilal; Mukherjee, S.; Bandyopadhyay, P.

    2016-05-01

    A versatile linear dusty (complex) plasma device is designed to study the transport and dynamical behavior of dust particles in a large volume. Diffused inductively coupled plasma is generated in the background of argon gas. A novel technique is used to introduce the dust particles in the main plasma by striking a secondary direct current glow discharge. These dust particles are found to get trapped in an electrostatic potential well, which is formed due to the combination of the ambipolar electric field caused by diffusive plasma and the field produced by the charged glass wall of the vacuum chamber. According to the requirements, the volume of the dust cloud can be controlled very precisely by tuning the plasma and discharge parameters. The present device can be used to address the underlying physics behind the transport of dust particles, self-excited dust acoustic waves, and instabilities. The detailed design of this device, plasma production and characterization, trapping and transport of the dust particle, and some of the preliminary experimental results are presented.

  13. Diffusion in disordered media

    NASA Astrophysics Data System (ADS)

    Havlin, Shlomo; Ben-Avraham, Daniel

    2002-01-01

    Diffusion in disordered systems does not follow the classical laws which describe transport in ordered crystalline media, and this leads to many anomalous physical properties. Since the application of percolation theory, the main advances in the understanding of these processes have come from fractal theory. Scaling theories and numerical simulations are important tools to describe diffusion processes (random walks: the 'ant in the labyrinth') on percolation systems and fractals. Different types of disordered systems exhibiting anomalous diffusion are presented (the incipient infinite percolation cluster, diffusion-limited aggregation clusters, lattice animals, and random combs), and scaling theories as well as numerical simulations of greater sophistication are described. Also, diffusion in the presence of singular distributions of transition rates is discussed and related to anomalous diffusion on disordered structures.

  14. Hereditary Diffuse Infiltrating Retinoblastoma.

    PubMed

    Schedler, Katharina J E; Traine, Peter G; Lohmann, Dietmar R; Haritoglou, Christos; Metz, Klaus A; Rodrigues, Eduardo B

    2016-03-01

    Retinoblastoma is one of the most common childhood cancers. The diffuse infiltrating retinoblastoma is a rare subtype of this neoplasm. The majority of cases of diffuse infiltrating retinoblastoma are unilateral and occur sporadically. Herein we report on a family with three children affected by retinoblastoma, among them one girl with diffuse infiltrating retinoblastoma. This girl was diagnosed at the age of 8 years with a unilateral diffuse infiltrating retinoblastoma. By contrast, the two brothers became clinically apparent in the first 2 years of life with bilateral retinoblastoma. The parents were clinically unremarkable. Genetic analysis of RB1 gene was performed. The girl with diffuse infiltrating RB was found to be heterozygous for an oncogenic mutation in the RB1 gene that was also carried by both brothers and the father of the family. These results show that diffuse infiltrating retinoblastoma can develop on the background of a hereditary predisposition to retinoblastoma. PMID:24892564

  15. Multinomial diffusion equation

    NASA Astrophysics Data System (ADS)

    Balter, Ariel; Tartakovsky, Alexandre M.

    2011-06-01

    We describe a new, microscopic model for diffusion that captures diffusion induced fluctuations at scales where the concept of concentration gives way to discrete particles. We show that in the limit as the number of particles N→∞, our model is equivalent to the classical stochastic diffusion equation (SDE). We test our new model and the SDE against Langevin dynamics in numerical simulations, and show that our model successfully reproduces the correct ensemble statistics, while the classical model fails.

  16. Multinomial diffusion equation

    SciTech Connect

    Balter, Ariel I.; Tartakovsky, Alexandre M.

    2011-06-24

    We describe a new, microscopic model for diffusion that captures diffusion induced uctuations at scales where the concept of concentration gives way to discrete par- ticles. We show that in the limit as the number of particles N ! 1, our model is equivalent to the classical stochastic diffusion equation (SDE). We test our new model and the SDE against Langevin dynamics in numerical simulations, and show that our model successfully reproduces the correct ensemble statistics, while the classical model fails.

  17. Gaseous diffusion system

    DOEpatents

    Garrett, George A.; Shacter, John

    1978-01-01

    1. A gaseous diffusion system comprising a plurality of diffusers connected in cascade to form a series of stages, each of said diffusers having a porous partition dividing it into a high pressure chamber and a low pressure chamber, and means for combining a portion of the enriched gas from a succeeding stage with a portion of the enriched gas from the low pressure chamber of each stage and feeding it into one extremity of the high pressure chamber thereof.

  18. Inpainting using airy diffusion

    NASA Astrophysics Data System (ADS)

    Lorduy Hernandez, Sara

    2015-09-01

    One inpainting procedure based on Airy diffusion is proposed, implemented via Maple and applied to some digital images. Airy diffusion is a partial differential equation with spatial derivatives of third order in contrast with the usual diffusion with spatial derivatives of second order. Airy diffusion generates the Airy semigroup in terms of the Airy functions which can be rewritten in terms of Bessel functions. The Airy diffusion can be used to smooth an image with the corresponding noise elimination via convolution. Also the Airy diffusion can be used to erase objects from an image. We build an algorithm using the Maple package ImageTools and such algorithm is tested using some images. Our results using Airy diffusion are compared with the similar results using standard diffusion. We observe that Airy diffusion generates powerful filters for image processing which could be incorporated in the usual packages for image processing such as ImageJ and Photoshop. Also is interesting to consider the possibility to incorporate the Airy filters as applications for smartphones and smart-glasses.

  19. Experimental study of vortex diffusers

    SciTech Connect

    Shakerin, S.; Miller, P.L.

    1995-11-01

    This report documents experimental research performed on vortex diffusers used in ventilation and air-conditioning systems. The main objectives of the research were (1) to study the flow characteristics of isothermal jets issuing from vortex diffusers, (2) to compare the vortex diffuser`s performance with that of a conventional diffuser, and (3) to prepare a report that disseminates the results to the designers of ventilation and air-conditioning systems. The researchers considered three diffusers: a conventional round ceiling diffuser and two different styles of vortex diffusers. Overall, the vortex diffusers create slightly more induction of ambient air in comparison to the conventional diffuser.

  20. Investigating Diffusion with Technology

    ERIC Educational Resources Information Center

    Miller, Jon S.; Windelborn, Augden F.

    2013-01-01

    The activities described here allow students to explore the concept of diffusion with the use of common equipment such as computers, webcams and analysis software. The procedure includes taking a series of digital pictures of a container of water with a webcam as a dye slowly diffuses. At known time points, measurements of the pixel densities…

  1. Anatomy of Particle Diffusion

    ERIC Educational Resources Information Center

    Bringuier, E.

    2009-01-01

    The paper analyses particle diffusion from a thermodynamic standpoint. The main goal of the paper is to highlight the conceptual connection between particle diffusion, which belongs to non-equilibrium statistical physics, and mechanics, which deals with particle motion, at the level of third-year university courses. We start out from the fact…

  2. Galactic Diffuse Emissions

    SciTech Connect

    Digel, Seth W.; /SLAC

    2007-10-25

    Interactions of cosmic rays with interstellar nucleons and photons make the Milky Way a bright, diffuse source of high-energy {gamma}-rays. Observationally, the results from EGRET, COMPTEL, and OSSE have now been extended to higher energies by ground-based experiments, with detections of diffuse emission in the Galactic center reported by H.E.S.S. in the range above 100 GeV and of diffuse emission in Cygnus by MILAGRO in the TeV range. In the range above 100 keV, INTEGRAL SPI has found that diffuse emission remains after point sources are accounted for. I will summarize current knowledge of diffuse {gamma}-ray emission from the Milky Way and review some open issues related to the diffuse emission -- some old, like the distribution of cosmic-ray sources and the origin of the 'excess' of GeV emission observed by EGRET, and some recently recognized, like the amount and distribution of molecular hydrogen not traced by CO emission -- and anticipate some of the advances that will be possible with the Large Area Telescope on GLAST. We plan to develop an accurate physical model for the diffuse emission, which will be useful for detecting and accurately characterizing emission from Galactic point sources as well as any Galactic diffuse emission from exotic processes, and for studying the unresolved extragalactic emission.

  3. The Diffusion of Innovation

    NASA Technical Reports Server (NTRS)

    Earabino, Gerard J.; Heyl, G. Christopher; Percorini, Thomas J.

    1987-01-01

    New ideas encounter obstacles on way to becoming products. Report examines process by which new ideas become products, processes, or accepted standards. Sequence of events called "the diffusion of innovation." Focuses on development of material processing in low gravity as case study in diffusion of innovation.

  4. Cosmology with matter diffusion

    SciTech Connect

    Calogero, Simone; Velten, Hermano E-mail: velten@cce.ufes.br

    2013-11-01

    We construct a viable cosmological model based on velocity diffusion of matter particles. In order to ensure the conservation of the total energy-momentum tensor in the presence of diffusion, we include a cosmological scalar field φ which we identify with the dark energy component of the universe. The model is characterized by only one new degree of freedom, the diffusion parameter σ. The standard ΛCDM model can be recovered by setting σ = 0. If diffusion takes place (σ > 0) the dynamics of the matter and of the dark energy fields are coupled. We argue that the existence of a diffusion mechanism in the universe may serve as a theoretical motivation for interacting models. We constrain the background dynamics of the diffusion model with Supernovae, H(z) and BAO data. We also perform a perturbative analysis of this model in order to understand structure formation in the universe. We calculate the impact of diffusion both on the CMB spectrum, with particular attention to the integrated Sachs-Wolfe signal, and on the matter power spectrum P(k). The latter analysis places strong constraints on the magnitude of the diffusion mechanism but does not rule out the model.

  5. Diffusion in Coulomb crystals.

    PubMed

    Hughto, J; Schneider, A S; Horowitz, C J; Berry, D K

    2011-07-01

    Diffusion in Coulomb crystals can be important for the structure of neutron star crusts. We determine diffusion constants D from molecular dynamics simulations. We find that D for Coulomb crystals with relatively soft-core 1/r interactions may be larger than D for Lennard-Jones or other solids with harder-core interactions. Diffusion, for simulations of nearly perfect body-centered-cubic lattices, involves the exchange of ions in ringlike configurations. Here ions "hop" in unison without the formation of long lived vacancies. Diffusion, for imperfect crystals, involves the motion of defects. Finally, we find that diffusion, for an amorphous system rapidly quenched from Coulomb parameter Γ=175 to Coulomb parameters up to Γ=1750, is fast enough that the system starts to crystalize during long simulation runs. These results strongly suggest that Coulomb solids in cold white dwarf stars, and the crust of neutron stars, will be crystalline and not amorphous. PMID:21867316

  6. Combustor diffuser interaction program

    NASA Technical Reports Server (NTRS)

    Srinivasan, Ram; Thorp, Daniel

    1986-01-01

    Advances in gas turbine engine performance are achieved by using compressor systems with high stage loading and low part count, which result in high exit Mach numbers. The diffuser and combustor systems in such engines should be optimized to reduce system pressure loss and to maximize the engine thrust-to-weight ratio and minimize length. The state-of-the-art combustor-diffuser systems do not meet these requirements. Detailed understanding of the combustor-diffuser flow field interaction is required for designing advanced gas turbine engines. An experimental study of the combustor-diffuser interaction (CDI) is being conducted to obtain data for the evaluation and improvement of analytical models applicable to a wide variety of diffuser designs. The CDI program consists of four technical phases: Literature Search; Baseline Configuration; Parametric Configurations; and Performance Configurations. Phase 2 of the program is in progress.

  7. Diffusion on strained surfaces

    NASA Astrophysics Data System (ADS)

    Schroeder, M.; Wolf, D. E.

    1997-03-01

    The change of diffusion kinetics when elastic fields are present is discussed for diffusion on (001) surfaces of simple cubic, fcc and bcc lattices. All particles interact pairwise with a Lennard-Jones potential. The simple cubic lattice was stabilized by an anisotropic prefactor. It is found that generically compressive strain enhances diffusion whereas tensile strain increases the activation barrier. An approximately linear dependence of the barrier in a wide range of misfits is found. In heteroepitaxy, diffusion on top of large clusters is inhomogeneous and anisotropic. The kinetics close to edges and centers of islands are remarkably different. In many cases changes of binding energies are small compared to those of saddle point energies. Thermodynamic arguments (minimization of free energy) are not appropriate to describe diffusion on strained surfaces in these cases.

  8. Thorium Diffusion in Monazite

    NASA Astrophysics Data System (ADS)

    Cherniak, D. J.

    2006-05-01

    Diffusion of thorium has been characterized in synthetic monazite under dry conditions. The synthetic monazites (either pure CePO4, NdPO4, or a mixed LREE phosphate containing Ce, Nd, and Sm) were grown via a Na2CO3-MoO3 flux method. The source of diffusant for the experiments were either synthesized ThSiO4 or CaTh(PO4)2 powders. Experiments were performed by placing source and monazite in Pt capsules and annealing capsules in 1 atm furnaces for times ranging from 10 days to a few hours, at temperatures from 1400 to 1550C. The Th distributions in the monazite were profiled by Rutherford Backscattering Spectrometry (RBS). The following Arrhenius relation was obtained for diffusion in monazite: DSm = 7.2x103 exp(-814 kJ mol-1/RT) m2sec-1 The diffusivity of Th was similar for monazites containing a single REE and the mixed LREE phosphates. Th diffusion was also similar for experiments run using the Th silicate and Ca-Th phosphate sources, suggesting that the substitutional mechanism for Th in monazite, i.e, Th+4 + Si+4 for REE+3 + P+5 with the ThSiO4 source, and Th+4 + Ca+2 for 2REE+3 with the CaTh(PO4)2 source, does not significantly affect Th diffusivities, and that Th is likely the rate-limiting species. Th diffusion in monazite is about 4 orders of magnitude slower than Pb diffusion (Cherniak et al., 2004). This contrasts with findings of Gardes et al. (2005) who determined that Pb, Th and REE diffusivities in monazite are similar. Th diffusion in zircon (Cherniak et al., 1997) is about an order of magnitude slower than in monazite, but with similar activation energy for diffusion. The smaller diffusivities in zircon may be a consequence of the larger disparity in size between Th and the Zr site in zircon as compared with Th and the REE site in monazite. Nonetheless, Th is essentially immobile in monazite with respect to exchange by volume diffusion under most geologic conditions; these findings may have implications for containment of high- level actinide

  9. Tungsten diffusion in olivine

    NASA Astrophysics Data System (ADS)

    Cherniak, D. J.; Van Orman, J. A.

    2014-03-01

    Diffusion of tungsten has been characterized in synthetic forsterite and natural olivine (Fo90) under dry conditions. The source of diffusant was a mixture of magnesium tungstate and olivine powders. Experiments were prepared by sealing the source material and polished olivine under vacuum in silica glass ampoules with solid buffers to buffer at NNO or IW. Prepared capsules were annealed in 1 atm furnaces for times ranging from 45 min to several weeks, at temperatures from 1050 to 1450 °C. Tungsten distributions in the olivine were profiled by Rutherford Backscattering Spectrometry (RBS). The following Arrhenius relation is obtained for W diffusion in forsterite: D=1.0×10-8exp(-365±28 kJ mol/RT) m s Diffusivities for the synthetic forsterite and natural Fe-bearing olivine are similar, and tungsten diffusion in olivine shows little dependence on crystallographic orientation or oxygen fugacity. The slow diffusivities measured for W in olivine indicate that Hf-W ages in olivine-metal systems will close to diffusive exchange at higher temperatures than other chronometers commonly used in cosmochronology, and that tungsten isotopic signatures will be less likely to be reset by subsequent thermal events.

  10. Tungsten diffusion in silicon

    SciTech Connect

    De Luca, A.; Texier, M.; Burle, N.; Oison, V.; Pichaud, B.; Portavoce, A.; Grosjean, C.

    2014-01-07

    Two doses (10{sup 13} and 10{sup 15} cm{sup −2}) of tungsten (W) atoms were implanted in different Si(001) wafers in order to study W diffusion in Si. The samples were annealed or oxidized at temperatures between 776 and 960 °C. The diffusion profiles were measured by secondary ion mass spectrometry, and defect formation was studied by transmission electron microscopy and atom probe tomography. W is shown to reduce Si recrystallization after implantation and to exhibit, in the temperature range investigated, a solubility limit close to 0.15%–0.2%, which is higher than the solubility limit of usual metallic impurities in Si. W diffusion exhibits unusual linear diffusion profiles with a maximum concentration always located at the Si surface, slower kinetics than other metals in Si, and promotes vacancy accumulation close to the Si surface, with the formation of hollow cavities in the case of the higher W dose. In addition, Si self-interstitial injection during oxidation is shown to promote W-Si clustering. Taking into account these observations, a diffusion model based on the simultaneous diffusion of interstitial W atoms and W-Si atomic pairs is proposed since usual models used to model diffusion of metallic impurities and dopants in Si cannot reproduce experimental observations.

  11. Diffusion Flame Stabilization

    NASA Technical Reports Server (NTRS)

    Takahashi, Fumiaki; Katta, V. R.

    2006-01-01

    Diffusion flames are commonly used for industrial burners in furnaces and flares. Oxygen/fuel burners are usually diffusion burners, primarily for safety reasons, to prevent flashback and explosion in a potentially dangerous system. Furthermore, in most fires, condensed materials pyrolyze, vaporize, and burn in air as diffusion flames. As a result of the interaction of a diffusion flame with burner or condensed-fuel surfaces, a quenched space is formed, thus leaving a diffusion flame edge, which plays an important role in flame holding in combustion systems and fire spread through condensed fuels. Despite a long history of jet diffusion flame studies, lifting/blowoff mechanisms have not yet been fully understood, compared to those of premixed flames. In this study, the structure and stability of diffusion flames of gaseous hydrocarbon fuels in coflowing air at normal earth gravity have been investigated experimentally and computationally. Measurements of the critical mean jet velocity (U(sub jc)) of methane, ethane, or propane at lifting or blowoff were made as a function of the coflowing air velocity (U(sub a)) using a tube burner (i.d.: 2.87 mm). By using a computational fluid dynamics code with 33 species and 112 elementary reaction steps, the internal chemical-kinetic structures of the stabilizing region of methane and propane flames were investigated. A peak reactivity spot, i.e., reaction kernel, is formed in the flame stabilizing region due to back-diffusion of heat and radical species against an oxygen-rich incoming flow, thus holding the trailing diffusion flame. The simulated flame base moved downstream under flow conditions close to the measured stability limit.

  12. Diffusion Flame Stabilization

    NASA Technical Reports Server (NTRS)

    Takahashi, Fumiaki; Katta, Viswanath R.

    2007-01-01

    Diffusion flames are commonly used for industrial burners in furnaces and flares. Oxygen/fuel burners are usually diffusion burners, primarily for safety reasons, to prevent flashback and explosion in a potentially dangerous system. Furthermore, in most fires, condensed materials pyrolyze, vaporize, and burn in air as diffusion flames. As a result of the interaction of a diffusion flame with burner or condensed-fuel surfaces, a quenched space is formed, thus leaving a diffusion flame edge, which plays an important role in flame holding in combustion systems and fire spread through condensed fuels. Despite a long history of jet diffusion flame studies, lifting/blowoff mechanisms have not yet been fully understood, compared to those of premixed flames. In this study, the structure and stability of diffusion flames of gaseous hydrocarbon fuels in coflowing air at normal earth gravity have been investigated experimentally and computationally. Measurements of the critical mean jet velocity (U(sub jc)) of methane, ethane, or propane at lifting or blowoff were made as a function of the coflowing air velocity (U(sub a)) using a tube burner (i.d.: 2.87 mm) (Fig. 1, left). By using a computational fluid dynamics code with 33 species and 112 elementary reaction steps, the internal chemical-kinetic structures of the stabilizing region of methane and propane flames were investigated (Fig. 1, right). A peak reactivity spot, i.e., reaction kernel, is formed in the flame stabilizing region due to back-diffusion of heat and radical species against an oxygen-rich incoming flow, thus holding the trailing diffusion flame. The simulated flame base moved downstream under flow conditions close to the measured stability limit.

  13. Hereditary Diffuse Gastric Cancer

    MedlinePlus

    ... with the syndrome is recommended. What are the estimated cancer risks associated with HDGC? Not everyone who ... the lifetime risk for diffuse gastric cancer is estimated to be 70% to 80% for men and ...

  14. Multinomial Diffusion Equation

    SciTech Connect

    Balter, Ariel I.; Tartakovsky, Alexandre M.

    2011-06-01

    We have developed a novel stochastic, space/time discrete representation of particle diffusion (e.g. Brownian motion) based on discrete probability distributions. We show that in the limit of both very small time step and large concentration, our description is equivalent to the space/time continuous stochastic diffusion equation. Being discrete in both time and space, our model can be used as an extremely accurate, efficient, and stable stochastic finite-difference diffusion algorithm when concentrations are so small that computationally expensive particle-based methods are usually needed. Through numerical simulations, we show that our method can generate realizations that capture the statistical properties of particle simulations. While our method converges converges to both the correct ensemble mean and ensemble variance very quickly with decreasing time step, but for small concentration, the stochastic diffusion PDE does not, even for very small time steps.

  15. Lung diffusion testing

    MedlinePlus

    Lung diffusion testing measures how well the lungs exchange gases. This is an important part of lung testing , because ... Gender Height Hemoglobin (the protein in red blood cells that carries oxygen) level

  16. Investigating diffusion with technology

    NASA Astrophysics Data System (ADS)

    Miller, Jon S.; Windelborn, Augden F.

    2013-07-01

    The activities described here allow students to explore the concept of diffusion with the use of common equipment such as computers, webcams and analysis software. The procedure includes taking a series of digital pictures of a container of water with a webcam as a dye slowly diffuses. At known time points, measurements of the pixel densities (darkness) of the digital pictures are recorded and then plotted on a graph. The resulting graph of darkness versus time allows students to see the results of diffusion of the dye over time. Through modification of the basic lesson plan, students are able to investigate the influence of a variety of variables on diffusion. Furthermore, students are able to expand the boundaries of their thinking by formulating hypotheses and testing their hypotheses through experimentation. As a result, students acquire a relevant science experience through taking measurements, organizing data into tables, analysing data and drawing conclusions.

  17. Mastocytosis, diffuse cutaneous (image)

    MedlinePlus

    This is a picture of diffuse, cutaneous mastocytosis. Abnormal collections of cells in the skin (mast cells) produce this rash. Unlike bullous mastocytosis, rubbing will not lead to formation of blisters ( ...

  18. Hydrogen Diffusion in Forsterite

    NASA Astrophysics Data System (ADS)

    Demouchy, S.; Mackwell, S.

    2002-12-01

    Physical and chemical properties of Earth's mantle are readily modified by interaction with volatiles, such as water. Thus, characterization of solubility and kinetics of incorporation for water in nominally anhydrous minerals is important in order to understand the behavior of Earth's interior under hydrous conditions. Experimental studies on the olivine-water system indicate that significant amounts of OH can dissolve within olivine as point defects (Bell and Rossman, 1992; Kohlstedt et al. 1996). Extending Kohlstedt and Mackwell's (1998) work, our study concerns the kinetics of hydrogen transport in the iron-free olivine-water system. This study is based on hydrogenation of forsterite samples during piston-cylinder and TZM cold-seal vessel experiments. We use infrared analyses in order to constrain the speciation of the mobile water-derived defects in forsterite single-crystal sample, and the rates of diffusion of such species under uppermost mantle conditions (0.2 to 1.5 GPa, 900 to 1100° C). Hydrogen defect transport in single crystals of forsterite is investigated for diffusion parallel to each crystallographic axis. Defect diffusivities are obtained by fitting a diffusion law to the OH content as a function of position in the sample. Our current results indicate that incorporation of hydroxyl species into iron-free olivine is a one-stage process with hydrogen diffusion linked to magnesium vacancy self-diffusion DV, such that DV = D~/3 = 10-12 m2/s at 1000° C parallel to [001], where D~ represents the chemical diffusivity. Those diffusion rates are slightly lower than in iron-bearing olivine for the same incorporation mechanism. The different concentration profiles show a clear anisotropy of diffusion, with fastest diffusion parallel to [001] as in iron-bearing olivine. Thus, while hydrogen solubilities are dependent on iron content, the rate of incorporation of water-derived species in olivine is not strongly coupled to the concentration of iron. This

  19. Nodal Diffusion & Transport Theory

    Energy Science and Technology Software Center (ESTSC)

    1992-02-19

    DIF3D solves multigroup diffusion theory eigenvalue, adjoint, fixed source, and criticality (concentration, buckling, and dimension search) problems in 1, 2, and 3-space dimensions for orthogonal (rectangular or cylindrical), triangular, and hexagonal geometries. Anisotropic diffusion theory coefficients are permitted. Flux and power density maps by mesh cell and regionwise balance integrals are provided. Although primarily designed for fast reactor problems, upscattering and internal black boundary conditions are also treated.

  20. Advanced manufacturing: Technology diffusion

    SciTech Connect

    Tesar, A.

    1995-12-01

    In this paper we examine how manufacturing technology diffuses rom the developers of technology across national borders to those who do not have the capability or resources to develop advanced technology on their own. None of the wide variety of technology diffusion mechanisms discussed in this paper are new, yet the opportunities to apply these mechanisms are growing. A dramatic increase in technology diffusion occurred over the last decade. The two major trends which probably drive this increase are a worldwide inclination towards ``freer`` markets and diminishing isolation. Technology is most rapidly diffusing from the US In fact, the US is supplying technology for the rest of the world. The value of the technology supplied by the US more than doubled from 1985 to 1992 (see the Introduction for details). History shows us that technology diffusion is inevitable. It is the rates at which technologies diffuse to other countries which can vary considerably. Manufacturers in these countries are increasingly able to absorb technology. Their manufacturing efficiency is expected to progress as technology becomes increasingly available and utilized.

  1. Cation Diffusion in Xenotime

    NASA Astrophysics Data System (ADS)

    Cherniak, D. J.

    2004-05-01

    Xenotime is an important mineral in metamorphic paragenesis, and useful in isotopic dating, garnet-xenotime thermometry, and monazite-xenotime thermometry, so diffusion data for xenotime of cations of geochronological and geochemical importance are of some interest. We report here on diffusion of the rare earth elements Sm, Dy and Yb in synthetic xenotime under dry conditions. The synthetic xenotime was grown via a Na2}CO{3}-MoO_{3 flux method. The source of diffusant for the experiments were REE phosphate powders, with experiments run with sources containing a single REE. Experiments were performed by placing source and xenotime in Pt capsules, and annealing capsules in 1 atm furnaces for times ranging from thirty minutes to a month, at temperatures from 1000 to 1400C. The REE distributions in the xenotime were profiled by Rutherford Backscattering Spectrometry (RBS). The following Arrhenius relations are obtained for diffusion in xenotime, normal to (101): DSm = 1.7x10-4 exp(-442 kJ mol-1/RT) m2}sec{-1 DDy = 3.5x10-7 exp(-365 kJ mol-1/RT) m2}sec{-1 DYb = 7.4x10-7 exp(-371 kJ mol-1/RT) m2}sec{-1. Diffusivities of these REE do not differ greatly in xenotime, in contrast to the findings noted for the REE in zircon (Cherniak et al., 1997), where the LREE diffuse more slowly, and with higher activation energies for diffusion, than the heavier rare earths. In zircon, these differences among diffusion of the rare earths are attributed to the relatively large size of the REE with respect to Zr, for which they substitute in the zircon lattice. With the systematic increase in ionic radius from the heavy to lighter REE, this size mismatch becomes more pronounced and diffusivities of the LREE are as consequence slower. Although xenotime is isostructural with zircon, the REE are more closely matched in size to Y, so in xenotime this effect appears much smaller and the REE diffuse at similar rates. In addition, the process of diffusion in xenotime likely involves simple REE+3

  2. Ti Diffusion in Pyroxene

    NASA Astrophysics Data System (ADS)

    Cherniak, D.; Liang, Y.

    2008-12-01

    Diffusion of titanium has been characterized in natural enstatite and diopside under buffered conditions and in air. The sources of diffusant for the enstatite experiments were mixtures of Mg, Si and Ti oxide powders, which were combined and heated at 1300°C overnight, and then thoroughly mixed with synthesized enstatite powder and heated for an additional day at 1300°C. Sources for diopside experiments were prepared similarly, using Ca, Mg, Si, and Ti oxide powders combined with synthesized diopside powder, with heating of source materials at 1200°C. Buffered experiments were prepared by enclosing source material and pyroxene (polished and pre-annealed under conditions comparable to those to be experienced in the experiment) in AgPd or platinum capsules, placing the metal capsule in a silica glass capsule with a solid buffer (to buffer at NNO or IW) and sealing the assembly under vacuum. Some experiments on enstatite were run in air; sample and source were placed in Pt capsules and crimped shut. Prepared capsules were then annealed in 1 atm furnaces for times ranging from 8 hours to a few months, at temperatures from 950 to 1200°C. The Ti distributions in the pyroxene were profiled with Rutherford Backscattering Spectrometry (RBS). The following Arrhenius relation is obtained for Ti diffusion in a natural enstatite, for diffusion normal to the (210) cleavage face (950 - 1150°C, experiments run in air): DTi = 1.9×10-10 exp(-300 ± 44 kJ mol-1/RT) m2 sec-1. Diffusion under NNO and IW-buffered conditions is similar to that for experiments run in air, suggesting little dependence of Ti diffusion on oxygen fugacity. There is also little evidence of anisotropy, as diffusion normal to (001) does not differ significantly from diffusion for the other orientation. Preliminary findings for Ti diffusion in diopside suggest diffusivities similar to those for enstatite. Ti diffusivities in enstatite are similar to those of the trivalent REEs (Cherniak and Liang, 2007

  3. Counterion Diffusion in Ionomers

    NASA Astrophysics Data System (ADS)

    Walter, Russell; Winey, Karen; Kim, Joon-Seop; Composto, Russell

    2004-03-01

    Diffusion of Cs counterions to the air/ionomer film interface is followed using Rutherford backscattering spectrometry and results compared with the "sticky reptation" model[1]. The ionomer system is poly(styrene-ran-methacrylic acid) (Cs-SMAA) neutralized at 100% by Cs. The concentration profiles exhibit a surface excess, z*, of Cs followed by a depletion of Cs. The z* and depletion layer thickness grow as t1/2, consistent with diffusion limited growth. Annealing studies at 130 °C, 145 °C and 208 °C were used to extract the diffusion coefficient, D. In all cases, D is greater than that of the matrix chains. These results suggest that the diffusion rate is controlled by the fraction of counterions that disassociate from the acid groups and migrate through the matrix. Moreover, the "sticky reptation" model doesn't appear to predict the diffusion behavior in the Cs-SMAA system. [1] Leibler, L, Ludwick, L., Rubinstein, M., Colby, R.H., Macromolecules 24 (1991) 4701.

  4. Cesium diffusion in graphite

    SciTech Connect

    Evans, R.B. III; Davis, W. Jr.; Sutton, A.L. Jr.

    1980-05-01

    Experiments on diffusion of /sup 137/Cs in five types of graphite were performed. The document provides a completion of the report that was started and includes a presentation of all of the diffusion data, previously unpublished. Except for data on mass transfer of /sup 137/Cs in the Hawker-Siddeley graphite, analyses of experimental results were initiated but not completed. The mass transfer process of cesium in HS-1-1 graphite at 600 to 1000/sup 0/C in a helium atmosphere is essentially pure diffusion wherein values of (E/epsilon) and ..delta..E of the equation D/epsilon = (D/epsilon)/sub 0/ exp (-..delta..E/RT) are about 4 x 10/sup -2/ cm/sup 2//s and 30 kcal/mole, respectively.

  5. Apparatus for diffusion separation

    DOEpatents

    Nierenberg, William A.; Pontius, Rex B.

    1976-08-10

    1. The method of testing the separation efficiency of porous permeable membranes which comprises causing a stream of a gaseous mixture to flow into contact with one face of a finely porous permeable membrane under such conditions that a major fraction of the mixture diffuses through the membrane, maintaining a rectangular cross section of the gaseous stream so flowing past said membrane, continuously recirculating the gas that diffuses through said membrane and continuously withdrawing the gas that does not diffuse through said membrane and maintaining the volume of said recirculating gas constant by continuously introducing into said continuously recirculating gas stream a mass of gas equivalent to that which is continuously withdrawn from said gas stream and comparing the concentrations of the light component in the entering gas, the withdrawn gas and the recirculated gas in order to determine the efficiency of said membrane.

  6. Diffusion imaging concepts for clinicians.

    PubMed

    Neil, Jeffrey J

    2008-01-01

    This review covers the fundamentals of diffusion tensor imaging. It is written with the clinician in mind and assumes the reader has a passing familiarity with magnetic resonance imaging (MRI). Topics covered include comparison of diffusion MRI with conventional MRI, water apparent diffusion coefficient (ADC), diffusion anisotropy, tract tracing, and changes of water apparent diffusion in response to injury. The discussion centers primarily on applications to the central nervous system, but examples from other tissues are included. PMID:18050325

  7. Hydrogen diffusion in Zircon

    NASA Astrophysics Data System (ADS)

    Ingrin, Jannick; Zhang, Peipei

    2016-04-01

    Hydrogen mobility in gem quality zircon single crystals from Madagascar was investigated through H-D exchange experiments. Thin slices were annealed in a horizontal furnace flushed with a gas mixture of Ar/D2(10%) under ambient pressure between 900 ° C to 1150 ° C. FTIR analyses were performed on oriented slices before and after each annealing run. H diffusion along [100] and [010] follow the same diffusion law D = D0exp[-E /RT], with log D0 = 2.24 ± 1.57 (in m2/s) and E = 374 ± 39 kJ/mol. H diffusion along [001] follows a slightly more rapid diffusion law, with log D0 = 1.11 ± 0.22 (in m2/s) and E = 334 ± 49 kJ/mol. H diffusion in zircon has much higher activation energy and slower diffusivity than other NAMs below 1150 ° C even iron-poor garnets which are known to be among the slowest (Blanchard and Ingrin, 2004; Kurka et al. 2005). During H-D exchange zircon incorporates also deuterium. This hydration reaction involves uranium reduction as it is shown from the exchange of U5+ and U4+ characteristic bands in the near infrared region during annealing. It is the first time that a hydration reaction U5+ + OH‑ = U4+ + O2‑ + 1/2H2, is experimentally reported. The kinetics of deuterium incorporation is slightly slower than hydrogen diffusion, suggesting that the reaction is limited by hydrogen mobility. Hydrogen isotopic memory of zircon is higher than other NAMs. Zircons will be moderately retentive of H signatures at mid-crustal metamorphic temperatures. At 500 ° C, a zircon with a radius of 300 μm would retain its H isotopic signature over more than a million years. However, a zircon is unable to retain this information for geologically significant times under high-grade metamorphism unless the grain size is large enough. Refrences Blanchard, M. and Ingrin, J. (2004) Hydrogen diffusion in Dora Maira pyrope. Physics and Chemistry of Minerals, 31, 593-605. Kurka, A., Blanchard, M. and Ingrin, J. (2005) Kinetics of hydrogen extraction and deuteration in

  8. Radon diffusion modelling.

    PubMed

    Wilkinson, P; Dimbylow, P J

    1985-10-01

    A mathematical model has been developed that examines the ingress of radon into houses, through a vertical crack in an otherwise impervious concrete floor. Initially, the model considered the diffusive flow of radon from its soil source and this simulation has highlighted the dependency of the flux of radon into the house on the magnitude of various parameters, such as the diffusion coefficient of radon in soil. A preliminary investigation of the modelling of pressure-driven flow into a building is presented, and the potential of this type of analysis is discussed. PMID:4081719

  9. Evolution of error diffusion

    NASA Astrophysics Data System (ADS)

    Knox, Keith T.

    1999-10-01

    As we approach the new millennium, error diffusion is approaching the 25th anniversary of its invention. Because of its exceptionally high image quality, it continues to be a popular choice among digital halftoning algorithms. Over the last 24 years, many attempts have been made to modify and improve the algorithm--to eliminate unwanted textures and to extend it to printing media and color. Some of these modifications have been very successful and are in use today. This paper will review the history of the algorithm and its modifications. Three watershed events in the development of error diffusion will be described, together with the lessons learned along the way.

  10. Evolution of error diffusion

    NASA Astrophysics Data System (ADS)

    Knox, Keith T.

    1998-12-01

    As we approach the new millennium, error diffusion is approaching the 25th anniversary of its invention. Because of its exceptionally high image quality, it continues to be a popular choice among digital halftoning algorithms. Over the last 24 years, many attempts have been made to modify and improve the algorithm - to eliminate unwanted textures and to extend it to printing media and color. Some of these modifications have been very successful and are in use today. This paper will review the history of the algorithm and its modifications. Three watershed events in the development of error diffusion will be described, together with the lesions learned along the way.