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Sample records for amorphous indium-gallium-zinc oxide

  1. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    NASA Astrophysics Data System (ADS)

    Sallis, S.; Butler, K. T.; Quackenbush, N. F.; Williams, D. S.; Junda, M.; Fischer, D. A.; Woicik, J. C.; Podraza, N. J.; White, B. E.; Walsh, A.; Piper, L. F. J.

    2014-06-01

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  2. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  3. Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

    SciTech Connect

    Choi, Seung-Ha; Jung, Woo-Shik; Park, Jin-Hong

    2012-11-19

    In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide ({alpha}-IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and R{sub s} measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the {alpha}-IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in {alpha}-IGZO was dramatically increased, contributing to the decrease of resistivity ({rho}) from 1.96 {Omega} cm (as-deposited {alpha}-IGZO) to 1.33 Multiplication-Sign 10{sup -3}{Omega} cm (350 Degree-Sign C annealed {alpha}-IGZO).

  4. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

    NASA Astrophysics Data System (ADS)

    Jeong, Jae Kyeong; Jeong, Jong Han; Yang, Hui Won; Park, Jin-Seong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-09-01

    The authors report the fabrication of high performance thin film transistors (TFTs) with an amorphous indium gallium zinc oxide (a-IGZO) channel, which was deposited by cosputtering using a dual IGZO and indium zinc oxide (IZO) target. The effect of the indium content on the device performance of the a-IGZO TFTs was investigated. At a relatively low IZO power of 400W, the field-effect mobility (?FE) and subthreshold gate swing (S) of the a-IGZO TFTs were dramatically improved to 19.3cm2/Vs and 0.35V/decade, respectively, compared to those (11.2cm2/Vs and 1.11V/decade) for the TFTs with the a-IGZO channel (reference sample) prepared using only the IGZO target. The enhancement in the subthreshold IDS-VGS characteristics at an IZO power of 400W compared to those of the reference sample was attributed to the reduction of the interface trap density rather than the reduction of the bulk defects of the a-IGZO channel.

  5. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    PubMed

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants. PMID:25805699

  6. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    NASA Astrophysics Data System (ADS)

    Arora, H.; Malinowski, P. E.; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-04-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm2 at a bias voltage of -2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C61-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 1012 Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiOx as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  7. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    SciTech Connect

    Arora, H.; Malinowski, P. E. Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  8. Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

    NASA Astrophysics Data System (ADS)

    Lee, Sangwon; Jeon, Kichan; Park, Jun-Hyun; Kim, Sungchul; Kong, Dongsik; Kim, Dong Myong; Kim, Dae Hwan; Kim, Sangwook; Kim, Sunil; Hur, Jihyun; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Park, Youngsoo; Jung, U.-In

    2009-09-01

    Bipolar ac stress-induced instability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is comparatively investigated with that under a positive dc gate bias stress. While the positive dc gate bias stress-induced threshold voltage shift (?VT) is caused by the charge trapping into the interface/gate dielectric as reported in previous works, the dominant mechanism of the ac stress-induced ?VT is observed to be due to the increase in the acceptorlike deep states of the density of states (DOS) in the a-IGZO active layer. Furthermore, it is found that the variation of deep states in the DOS makes a parallel shift in the IDS-VGS curve with an insignificant change in the subthreshold slope, as well as the deformation of the CG-VG curves.

  9. Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2014-04-07

    We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.

  10. Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

    NASA Astrophysics Data System (ADS)

    Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

    2013-04-01

    It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

  11. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiNx coupled junction

    NASA Astrophysics Data System (ADS)

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun

    2015-08-01

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiNx). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiNx junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm2 on-current density measured at -7 V; lower than 7.3 10-9 A/cm2 off-current density; 2.53 ideality factor; and high rectifying ratio of 108-109. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiNx/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  12. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Um, Jae Gwang; Mativenga, Mallory; Migliorato, Piero; Jang, Jin

    2015-06-01

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-?m. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length LD Ln 10-?m, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

  13. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Qian, Hui-Min; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Tang, Lan-Feng; Zhou, Dong; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Liao; Huang, Xiao-Ming

    2015-07-01

    The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant ? is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier E?stress = 0.72 eV for the PBS process and an average effective energy barrier E?recovery = 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China

  14. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    SciTech Connect

    Jo, Kwang-Won; Cho, Won-Ju

    2014-11-24

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  15. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    SciTech Connect

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 ??cm to 2.79??10{sup ?3} ??cm after treatment, and then it increases to 7.92??10{sup ?2} ??cm after annealing at 300?C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300?C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L?=?4??m. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2?cm{sup 2}/V?s after annealing at 300?C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300?C annealing.

  16. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

    NASA Astrophysics Data System (ADS)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2015-11-01

    We study the evolution of the structural and electronic properties of crystalline indium gallium zinc oxide (IGZO) upon amorphization by first-principles calculation. The bottom of the conduction band (BCB) is found to be constituted of a pseudo-band of molecular orbitals that resonate at the same energy on different atomic sites. They display a bonding character between the s orbitals of the metal sites and an anti-bonding character arising from the interaction between the oxygen and metal s orbitals. The energy level of the BCB shifts upon breaking of the crystal symmetry during the amorphization process, which may be attributed to the reduction of the coordination of the cationic centers. The top of the valence band (TVB) is constructed from anti-bonding oxygen p orbitals. In the amorphous state, they have random orientation, in contrast to the crystalline state. This results in the appearance of localized tail states in the forbidden gap above the TVB. Zinc is found to play a predominant role in the generation of these tail states, while gallium hinders their formation. Last, we study the dependence of the fundamental gap and effective mass of IGZO on mechanical strain. The variation of the gap under strain arises from the enhancement of the anti-bonding interaction in the BCB due to the modification of the length of the oxygen-metal bonds and/or to a variation of the cation coordination. This effect is less pronounced for the amorphous material compared to the crystalline material, making amorphous IGZO a semiconductor of choice for flexible electronics. Finally, the effective mass is found to increase upon strain, in contrast to regular materials. This counterintuitive variation is due to the reduction of the electrostatic shielding of the cationic centers by oxygen, leading to an increase of the overlaps between the metal orbitals at the origin of the delocalization of the BCB. For the range of strain typically met in flexible electronics, the induced variation in the effective mass is found to be negligible (less than 1%).

  17. Tunneling phenomenon of amorphous indium-gallium-zinc-oxide thin film transistors for flexible display

    NASA Astrophysics Data System (ADS)

    Oh, Teresa

    2015-09-01

    It is an importance to understand the contact mechanism at interfaces between dielectric and channel materials to improve the performance of thin film transistors. Oxide semiconductor has proposed as promising candidate for transparent flexible application, whose development requires greater understand and control of their electron contacts. The performance of IGZO/SiOC TFTs depended on properties of SiOC as a gate insulator. SiOC exhibited a range of systematic interface electronic structure that can be understood at the atomic scale to provide a comprehensive feature of Schottky barrier and Ohmic contacts. The conduction of TFTs prepared on low polar SiOC was progressed by the tunneling behavior. The ambipolar transfer characteristics in tunneling transistors were done by a spontaneous potential barrier of SiOC such as the Schottky barrier (SB) in a short range and Ohmic contact in a long range. TFTs on SiOC with Poole-Frenkel contact as high SB operated under the threshold voltage, and then became free from the threshold voltage shift. However, the TFTs on high polar SiOC with Ohmic contact in a short range was also showed the unipolar characteristics by the trapping behavior as well as instability owing to the operation at high drain bias voltage over the threshold voltage. [Figure not available: see fulltext.

  18. Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

    NASA Astrophysics Data System (ADS)

    Kim, Joonwoo; Jeong, Soon Moon; Jeong, Jaewook

    2015-11-01

    We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 m. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the field-effect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

  19. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  20. Study on interface characteristics in amorphous indium-gallium-zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

    NASA Astrophysics Data System (ADS)

    Wu, Chenfei; Huang, Xiaoming; Lu, Hai; Yu, Guang; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

    2015-07-01

    In this work, the interface properties of amorphous indium-gallium-zinc oxide thin film transistors annealed at different temperatures ranging from 150 to 250 C are studied by temperature dependent mobility and low-frequency noise (LFN) characterizations. The dominant scattering mechanism for carrier transport is found to be Coulomb scattering based on gate bias and temperature dependent mobility measurement. Meanwhile, as the annealing temperature increases, the dominant mechanism of LFN within the device channel varies from carrier number fluctuation to carrier mobility fluctuation. The border trap density as well as the distribution properties of charged border traps is deduced. The present results suggest that annealing at higher temperature has a more remarkable effect on removing deeper border traps than traps closer to the channel/dielectric interface.

  1. Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

    SciTech Connect

    Gadre, Mandar J.; Alford, T. L.

    2011-08-01

    Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6 x 10{sup 19} cm{sup -3}).

  2. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  3. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    NASA Astrophysics Data System (ADS)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-01

    We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm2 intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the VTG from -15 to +15 V. By changing VTG from negative to positive, the Fermi level (EF) shifts toward conduction band edge (EC), which substantially controls the conversion of neutral vacancy to charged one (VO → VO+/VO2+ + e-/2e-), peroxide (O22-) formation or conversion of ionized interstitial (Oi2-) to neutral interstitial (Oi), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows -2.7 V shift at VTG = -15 V, which gradually decreases to -0.42 V shift at VTG = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (VO+/VO2+/O22-/Oi) and/or hole trapping in the a-IGZO /interfaces.

  4. Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N{sub 2}O plasma treatment

    SciTech Connect

    Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Geng-Wei; Tai, Ya-Hsiang; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

    2013-11-28

    An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N{sub 2}O plasma treatment. Experimental verification shows that the N{sub 2}O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400?K by oxygen atoms leaving their original sites. The N{sub 2}O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N{sub 2}O plasma treatment is much lower than that in as-fabricated devices. The N{sub 2}O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

  5. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih; Sze, Simon M.

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  6. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    PubMed Central

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites. PMID:26972476

  7. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.

    PubMed

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm(2)/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites. PMID:26972476

  8. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    SciTech Connect

    Flewitt, A. J.; Powell, M. J.

    2014-04-07

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.650.75?eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}?10{sup 7}?s{sup ?1}, which suggests a weak localization of carriers in band tail states over a 2040?nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect.

  9. Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

    SciTech Connect

    Watanabe, Ken; Lee, Dong-Hee; Materials and Structures Laboratory , Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 ; Sakaguchi, Isao; Haneda, Hajime; Nomura, Kenji; Kamiya, Toshio; Materials Research Center for Element Strategy , Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 ; Hosono, Hideo; Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026; Materials Research Center for Element Strategy , Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 ; Ohashi, Naoki; Materials Research Center for Element Strategy , Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026

    2013-11-11

    An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200 °C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400 °C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.

  10. Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration

    NASA Astrophysics Data System (ADS)

    Chang, Seongpil; Dong, Ki-Young; Park, Jung-Ho; Oh, Tae-Yeon; Kim, Jong-Woo; Lee, Sang Yeol; Ju, Byeong-Kwon

    2010-06-01

    We have investigated the parylene-groups for the device scaling-down as the protection layer of polyethersulfone (PES) substrate. In general, photolithography process on the PES substrate could not be allowed due to its poor chemical resistance. In this work, parylene-C is used as the protection layer. However, adhesion problem is observed caused by the hydrophobic property of parylene-groups. Thereby we additionally used SiO2 as the adhesion layer. Finally, we demonstrated the scaling-down of amorphous indium gallium zinc oxide thin film transistor on a plastic substrate by using lithography technique. Field-effect mobility, threshold voltage, current on-to-off ratio are measured to be 0.84 cm2/V s, 19.7 V, and 7.62104, respectively.

  11. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    SciTech Connect

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

    2014-12-08

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

  12. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

    SciTech Connect

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin

    2014-08-04

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  13. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    SciTech Connect

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Park, Jozeph; Ahn, Byung Du; Kim, Hyun-Suk E-mail: drlife@kookmin.ac.kr

    2015-03-23

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

  14. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45?GHz.

    PubMed

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-01-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3?GHz at zero bias, which is beyond the critical benchmark speed of 2.45?GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning. PMID:26138510

  15. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz

    NASA Astrophysics Data System (ADS)

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-07-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  16. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    NASA Astrophysics Data System (ADS)

    Guo, Li Qiang; Zhu, Li Qiang; Ding, Jian Ning; Huang, Yu Kai

    2015-08-01

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO2 electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO2 electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  17. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  18. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    NASA Astrophysics Data System (ADS)

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-01

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as -2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to -15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  19. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    SciTech Connect

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  20. Interface location-controlled indium gallium zinc oxide thin-film transistors using a solution process

    NASA Astrophysics Data System (ADS)

    Na, Jae Won; Kim, Yeong-gyu; Jung, Tae Soo; Tak, Young Jun; Park, Sung Pyo; Park, Jeong Woo; Kim, Si Joon; Kim, Hyun Jae

    2016-03-01

    The role of an interface as an electron-trapping layer in double-stacked indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was investigated and interface location-controlled (ILC) IGZO TFTs were introduced. In the ILC TFTs, the thickness of the top and bottom IGZO layers is controlled to change the location of the interface layer. The system exhibited improved electrical characteristics as the location of the interface layer moved further from the gate insulator: field-effect mobility increased from 0.36 to 2.17 cm2 V‑1 s‑1, and the on-current increased from 2.43  ×  10‑5 to 1.33  ×  10‑4 A. The enhanced electrical characteristics are attributed to the absence of an electron-trapping interface layer in the effective channel layer where electrons are accumulated under positive gate bias voltage.

  1. In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo

    2013-07-01

    The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O{sup -} with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O{sub 2}). Dissociation of ZnO{sup -}, GaO{sup -}, ZnO{sub 2}{sup -}, and GaO{sub 2}{sup -} radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O{sup -} ion flux.

  2. Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

    SciTech Connect

    Yamada, Kazuo; Takeda, Satoshi; Nomura, Kenji; Abe, Katsumi; Hosono, Hideo

    2014-09-29

    The effect of an ambient atmosphere with a positive bias constant current stress (CCS) and a negative bias illumination stress (NBIS) on the stability of amorphous In-Ga-Zn-O thin film transistors (TFTs) is examined by utilizing a glass-hermetic-sealant with a moisture permeability of less than 10{sup −6} g/m{sup 2} · day. In the CCS test, the threshold voltage shift (ΔV{sub th}) was remarkably suppressed in the glass-sealed TFTs. The unsealed and resin-sealed TFTs exhibited large ΔV{sub th} values. During the NBIS tests, the glass-sealed TFTs had almost the same negative ΔV{sub th} as the unsealed and resin sealed TFTs. Among the different TFTs, no significant differences were observed in the threshold voltage, the subthreshold swing and the saturation mobility as a function of the photon energy. It is concluded that ambient molecules were the primary origin of the instability of the ΔV{sub th}, induced by a CCS, but they were not related to the NBIS instability. The major role of the effective passivation layers in the NBIS test was not to simply block out the ambient effects, but to reduce the extra density of states at/near the surface of the back channel.

  3. Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium-Gallium-Zinc Oxide

    NASA Astrophysics Data System (ADS)

    Kato, Kiyoshi; Shionoiri, Yutaka; Sekine, Yusuke; Furutani, Kazuma; Hatano, Takehisa; Aoki, Taro; Sasaki, Miyuki; Tomatsu, Hiroyuki; Koyama, Jun; Yamazaki, Sunpei

    2012-02-01

    We measured a significantly low off-state current (135 yA/m at 85 C) of a metal oxide semiconductor (MOS) transistor using indium-gallium-zinc oxide (IGZO), which is an oxide semiconductor material. Note that y is 10-24. A transistor in which the hydrogen concentration in an IGZO film is lowered (51019 cm-3 or lower) was used. To estimate the minute current accurately, we established a measurement method in which changes in the amount of electrical charge are measured for a long time. Such extremely low off-state current characteristics show promise for new applications of IGZO transistors in memories.

  4. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  5. Influences of Gate Bias and Light Stresses on Device Characteristics of High-Energy Electron-Beam-Irradiated Indium Gallium Zinc Oxide Based Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Yu, Kyeong Min; Moon, Hye Ji; Ryu, Min Ki; Cho, Kyoung Ik; Yun, Eui-Jung; Bae, Byung Seong

    2012-09-01

    Under white light illumination, amorphous indium-gallium-zinc oxide (a-IGZO)-based thin-film transistors (TFTs) showed a large negative shift of threshold voltage of more than -15 V depending on the process conditions. We investigated the influences of both gate bias and white light illumination on device properties of IGZO-based TFTs untreated and treated with high-energy electron beam irradiation (HEEBI). The TFTs were treated with HEEBI in air at room temperature (RT), electron beam energy of 0.8 MeV, and a dose of 11014 electrons/cm2. The HEEBI-treated TFTs showed an improved stability under negative bias illumination stress (NBIS) and positive bias illumination stress (PBIS) compared with non-HEEBI-treated TFTs, suggesting that the acceptor-like defects might be generated by HEEBI treatment near the valence band edge.

  6. Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.

    PubMed

    Tak, Young Jun; Du Ahn, Byung; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm(2)/Vs, 3.96 × 10(7) to 1.03 × 10(8), and 11.2 to 7.2 V, respectively. PMID:26902863

  7. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  8. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

    SciTech Connect

    Lim, Wantae; Jang, Jung Hun; Kim, S.-H.; Norton, D. P.; Craciun, V; Pearton, S. J.; Ren, F.; Shen, H.

    2008-08-25

    High-performance amorphous ({alpha}-) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate substrates coated with indium oxide (In{sub 2}O{sub 3}) films. The InGaZnO films were deposited by rf magnetron sputtering with the presence of O{sub 2} at room temperature. The n-type carrier concentration of InGaZnO film was {approx}2x10{sup 17} cm{sup -3}. The bottom-gate-type TFTs with SiO{sub 2} or SiN{sub x} gate dielectric operated in enhancement mode with good electrical characteristics: saturation mobility 11.5 cm{sup 2} V{sup -1} s{sup -1} for SiO{sub 2} and 12.1 cm{sup 2} V{sup -1} s{sup -1} for SiN{sub x} gate dielectrics and drain current on-to-off ratio >10{sup 5}. TFTs with SiN{sub x} gate dielectric exhibited better performance than those with SiO{sub 2}. This is attributed to the relatively high dielectric constant (i.e., high-k material) of SiN{sub x}. After more than 500 h aging time at room temperature, the saturation mobility of the TFTs with SiO{sub 2} gate dielectric was comparable to the as-fabricated value and the threshold voltage shift was 150 mV.

  9. Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

    SciTech Connect

    Thakur, Bikash; Sambandan, Sanjiv; Lee, Sungsik; Nathan, Arokia; Ahnood, Arman; Jeon, Sanghun

    2014-05-19

    Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔE{sub t}≈ 0.3 eV and with a density of state distribution as D{sub t}(E{sub t−j})=D{sub t0}exp(−ΔE{sub t}/kT)with D{sub t0} = 5.02 × 10{sup 11} cm{sup −2} eV{sup −1}. Such a model is useful for developing simulation tools for circuit design.

  10. Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film

    NASA Astrophysics Data System (ADS)

    Liu, P.; Chen, T. P.; Li, X. D.; Liu, Z.; Wong, J. I.; Liu, Y.; Leong, K. C.

    2014-01-01

    A write-once-read-many-times (WORM) memory devices based on O2 plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is 109 ? for a device with the radius of 50 ?m) as a result of the O2 plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2 V is 103 ? for the radius of 50 ?m) by applying a voltage pulse (e.g., 10 V/1 ?s). The WORM device has good data-retention and reading-endurance capabilities.

  11. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    SciTech Connect

    Liu, P. Chen, T. P. Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2?V is ?10{sup 9} ? for a device with the radius of 50??m) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2?V is ?10{sup 3} ? for the radius of 50??m) by applying a voltage pulse (e.g., 10?V/1??s). The WORM device has good data-retention and reading-endurance capabilities.

  12. Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications

    NASA Astrophysics Data System (ADS)

    Yamauchi, Yoshimitsu; Kamakura, Yoshinari; Isagi, Yousuke; Matsuoka, Toshimasa; Malotaux, Satoshi

    2013-09-01

    A novel floating-gate oxide semiconductor (FLOTOS) memory using a wide-band-gap indium-gallium-zinc oxide (IGZO) is presented for low-power system-on-panel applications. An IGZO thin-film-transistor (TFT) is used as a memory transistor for controlling read current as well as a switching transistor for storing charges in a storage capacitor (Cs). The FLOTOS memory is fabricated using a standard IGZO TFT process without any additional process or mask steps. The proposed precharge-assisted threshold voltage compensation technique makes it possible to realize an infinite number of write cycles and a low-power write operation with a bit-line voltage of 5 V. Furthermore, excellent data retention longer than 10 h is obtained at 60 C even under the worst bias-stress condition of read operation with the ultra low off-state leakage (2.810-20 A/m) of the IGZO TFTs, which is estimated to be smaller by more than 7 orders of magnitude than that of polycrystalline silicon TFTs.

  13. Electrical characteristics and short-channel effect of c-axis aligned crystal indium gallium zinc oxide transistor with short channel length

    NASA Astrophysics Data System (ADS)

    Kobayashi, Yoshiyuki; Matsuda, Shinpei; Matsubayashi, Daisuke; Suzawa, Hideomi; Sakakura, Masayuki; Hanaoka, Kazuya; Okazaki, Yutaka; Yamamoto, Tsutomu; Hondo, Suguru; Hamada, Takashi; Sasagawa, Shinya; Nagai, Masaharu; Hata, Yuki; Maruyama, Tetsunori; Yamamoto, Yoshitaka; Yamazaki, Shunpei

    2014-01-01

    A channel length of a c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) transistor having low off-state current at a yA/m level was decreased to 100 nm, and the electrical characteristics and short-channel effect of the CAAC-IGZO transistor were researched. As a result, we found that, in the CAAC-IGZO transistor with L = 100 nm, even with a gate insulator film having an equivalent oxide thickness (EOT) = 11 nm, an extremely small off-state current of 380 yA/m at 85 C is maintained, in addition channel length dependence of the electrical characteristics is hardly seen. Favorable values of characteristics of the CAAC-IGZO transistor can be obtained, such as subthreshold slope (SS) = 77 mV/dec, drain induced barrier lowering (DIBL) = 73 mV/V, threshold voltage (Vth) = 0.65 V, and on-state current (Ion) = 65 A/m. These results suggest the possibility that the CAAC-IGZO transistor can be applied to an LSI in a deep submicron region.

  14. Indium-gallium-zinc-oxide layer used to increase light transmittance efficiency of adhesive layer for stacked-type multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko; Sameshima, Toshiyuki

    2015-11-01

    We report the increase in transmittance efficiency of the intermediate layer for multijunction solar cells caused by the indium-gallium-zinc-oxide (IGZO) layer used as the antireflection layer. Si substrates coated with a 200-nm-thick IGZO layer with a refractive index of 1.85 were prepared. The resistivity of the IGZO layer was increased from 0.0069 (as-deposited) to 0.032 ? cm by heat treatment at 350 C for 1 h to prevent free-carrier optical absorption. Samples with the Si/IGZO/adhesive/IGZO/Si structure were fabricated. The average transmissivity for wavelengths between 1200 and 1600 nm was 49%, which was close to 55% of single-crystal silicon substrates. A high effective transmittance efficiency of 89% was experimentally achieved. The numerical calculation showed in an effective transmittance efficiency of 99% for 170-nm-thick antireflection layers with a resistivity of 0.6 ? cm and a refractive index of 2.1.

  15. Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination

    NASA Astrophysics Data System (ADS)

    Lan-Feng, Tang; Hai, Lu; Fang-Fang, Ren; Dong, Zhou; Rong, Zhang; You-Dou, Zheng; Xiao-Ming, Huang

    2016-03-01

    Not Available Supported by the Key Industrial R&D Program of Jiangsu Province under Grand No BE2015155, the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities under Grant No 021014380033.

  16. Thermal Characteristics of Amorphous Indium-Gallium-Zinc-Oxide and Graphite in Display Panel Based Thin Film Transistors.

    PubMed

    Kim, Hak-Jun; Kim, Youn-Jea

    2015-11-01

    One of the important design factors in the smart electronic industry is proper heat treatment of the display panel. In order to improve the heat transfer performance of display panels, we analyzed a three-dimensional model of multi-stack layers of the thin film transistors (TFTs). In particular, we numerically investigated the thermal barrier effects of active layers having different material properties of a-IGZO (isotropy) and graphite (anisotropy). We calculated the temperature distribution on the display panel with each active layer, using the commercial code, COMSOL Multiphysics. We graphically depict comparative results of the thermal characteristics between a-IGZO and graphite with the stacked structure of the TFTs. PMID:26726627

  17. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

    NASA Astrophysics Data System (ADS)

    Kumar, Narendra; Kumar, Jitendra; Panda, Siddhartha

    2015-06-01

    The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 oC in N2 ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 oC. The increased pH sensitivity with the film annealed at 400 oC in N2 gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 oC was attributed to defects in the films as well as the induced traps at the IGZO/SiO2 interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  18. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    SciTech Connect

    Gelinck, G. H.; Breemen, A. J. J. M. van; Cobb, B.

    2015-03-02

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  19. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Gelinck, G. H.; van Breemen, A. J. J. M.; Cobb, B.

    2015-03-01

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  20. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    SciTech Connect

    Li, Qin; Song, Zhong Xiao; Ma, Fei E-mail: liyhemail@gmail.com; Li, Yan Huai E-mail: liyhemail@gmail.com; Xu, Ke Wei

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  1. Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

    SciTech Connect

    Ha, Tae-Jun

    2014-10-15

    We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

  2. Conduction mechanism in amorphous InGaZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Bhoolokam, Ajay; Nag, Manoj; Steudel, Soeren; Genoe, Jan; Gelinck, Gerwin; Kadashchuk, Andrey; Groeseneken, Guido; Heremans, Paul

    2016-01-01

    We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insufficient to explain TFT behavior as a function of temperature. We also show the intrinsic mobility is dependent on temperature due to scattering by ionic impurities or lattice. In solving the Poisson equation to find the surface potential and back potential as a function of gate voltage, we explicitly allow for the back surface to be floating, as is the case for a-IGZO transistors. The parameters for gap states, percolation barriers and intrinsic mobility at room temperature that we extract with this comprehensive model are in good agreement with those extracted in literature with partially-complete models.

  3. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-12

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  4. Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors

    NASA Astrophysics Data System (ADS)

    Gwang Um, Jae; Mativenga, Mallory; Migliorato, Piero; Jang, Jin

    2014-09-01

    The positive threshold voltage (VTH) shift induced by positive gate bias stress (PBS) in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) is commonly attributed to carrier trapping mechanism. Here we show that in addition to these trapping mechanisms, the concentration of donors also increases during PBS when the applied gate bias stress voltage VGS_Stress?30 V. In the early stages of the PBS, this increase in donor concentration may manifest itself as a negative VTH shift. In the case of VGS_Stress?40 V, however, the increase is not detectable because electron trapping at the semiconductor/gate-insulator interface is dominant - even in the early stages of the PBS.

  5. Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

    NASA Astrophysics Data System (ADS)

    Gelinck, Gerwin H.; Cobb, Brian; van Breemen, Albert J. J. M.; Myny, Kris

    2015-07-01

    Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these.

  6. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    SciTech Connect

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du E-mail: drlife@kookmin.ac.kr; Kim, Yong-Sung

    2014-10-13

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  7. Low-Temperature Solution Processing of Amorphous Metal Oxide Semiconductors for High-Performance Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Hennek, Jonathan W.

    The growing field of large-area flexible electronics presents the need for amorphous materials with electrical performances superior to amorphous hydrogenated silicon (a-Si:H). Metal oxide semiconductors show great promise in thin film transistors (TFTs) due to their high electron mobility (micro, 1--100 cm2V-1s-1), mechanical flexibility, and electrical stability. However, most oxide semiconductor fabrication still relies on expensive, inflexible and energy intensive vacuum deposition methods. To overcome these limitations, my thesis work has focused on developing low-temperature solution processing routes to functional metal oxide materials. In Chapter 2, we demonstrate an optimized "ink" and printing process for inkjet patterning of amorphous indium gallium zinc oxide (a-IGZO) and investigate the effects of device structure on derived electron mobility. Bottom-gate top-contact (BGTC) TFTs are fabricated and shown to exhibit electron mobilities comparable to a-Si:H. Furthermore, a record micro of 2.5 cm 2V-1s-1 is demonstrated for bottom-gate bottom-contact (BGBC) TFTs. The mechanism underlying such impressive performance is investigated using transmission line techniques, and it is shown that the semiconductor-source/drain electrode interface contact resistance is nearly an order of magnitude lower for BGBC transistors versus BGTC devices. In Chapter 3, we report the implementation of amorphous indium yttrium oxide (a-IYO) as a TFT semiconductor for the first time. Amorphous and polycrystalline IYO films are grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films are analyzed by DTA, TGA, XRD, AFM, XPS, and optical transmission, revealing efficient conversion to the metal-oxide lattice, and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit impressive electron mobilities of 7.3 cm2V-1s-1 (Tanneal = 300 C) and 5.0 cm2V-1s -1 (Tanneal = 250 C) for 2 V operation. Finally, Chapter 4 examines the role of the strong oxygen binding cation, known as the "oxygen getter" in quaternary metal oxide semiconductors. We present a systematic structural and electrical study of the carrier suppression role of gallium, scandium, yttrium, and lanthanum when introduced into IZO. We conclude that metal oxide lattice energy (HL) and metal ionic radius are the best predictors of the efficacy of an oxygen getter in IXZO and only Ga acts effectively in this role.

  8. Monolithic metal oxide transistors.

    PubMed

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics. PMID:25777338

  9. High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

    SciTech Connect

    Ye Yan; Lim, Rodney; White, John M.

    2009-10-01

    Zinc oxynitride semiconductor material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn{sub 3}N{sub 2}) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm{sup 2} V{sup -1} s{sup -1} for the as-deposited film produced at 50 deg. C and 110 cm{sup 2} V{sup -1} s{sup -1} after annealing at 400 deg. C. In addition, it has been observed that the Hall mobility of the material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide semiconductor, indium-gallium-zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film transistor performance of the material have also been tested, and results are presented herein.

  10. Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

    SciTech Connect

    Chasin, Adrian Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul; Simoen, Eddy; Gielen, Georges

    2014-02-24

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼10{sup 19} cm{sup −3} eV{sup −1} at the conduction band edge and a value of ∼10{sup 17} cm{sup −3} eV{sup −1} at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

  11. Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

    SciTech Connect

    Liu, Kuan-Hsien; Chou, Wu-Ching E-mail: wuchingchou@mail.nctu.edu.tw; Chang, Ting-Chang E-mail: wuchingchou@mail.nctu.edu.tw; Chen, Hua-Mao; Tai, Ya-Hsiang; Tsai, Ming-Yen; Hung, Pei-Hua; Chu, Ann-Kuo; Wu, Ming-Siou; Hung, Yi-Syuan; Hsieh, Tien-Yu; Yeh, Bo-Liang

    2014-10-21

    This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I{sub D}-V{sub G} and modulated peak/base pulse time I{sub D}-V{sub D} measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.

  12. Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

    NASA Astrophysics Data System (ADS)

    Park, Ick-Joon; Jeong, Chan-Yong; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Sang Jik; Kim, Bosul; Cheong, Woo-Seok; Song, Sang-Hun; Kwon, Hyuck-In

    2012-10-01

    In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 C to 100 C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.

  13. Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

    PubMed Central

    Park, Sungjun; Lee, SeYeong; Kim, Chang-Hyun; Lee, Ilseop; Lee, Won-June; Kim, Sohee; Lee, Byung-Geun; Jang, Jae-Hyung; Yoon, Myung-Han

    2015-01-01

    Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5 V, high transconductance of ~1.0 mS, large current on-off ratios over 107, and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo. PMID:26271456

  14. Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics.

    PubMed

    Park, Sungjun; Lee, SeYeong; Kim, Chang-Hyun; Lee, Ilseop; Lee, Won-June; Kim, Sohee; Lee, Byung-Geun; Jang, Jae-Hyung; Yoon, Myung-Han

    2015-01-01

    Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5 V, high transconductance of ~1.0 mS, large current on-off ratios over 10(7), and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo. PMID:26271456

  15. Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

    NASA Astrophysics Data System (ADS)

    Park, Sungjun; Lee, Seyeong; Kim, Chang-Hyun; Lee, Ilseop; Lee, Won-June; Kim, Sohee; Lee, Byung-Geun; Jang, Jae-Hyung; Yoon, Myung-Han

    2015-08-01

    Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5?V, high transconductance of ~1.0?mS, large current on-off ratios over 107, and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo.

  16. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

    PubMed Central

    2013-01-01

    Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm2 V–1 s–1. We show that it is possible to solution-process these materials at low process temperature (225–200 °C yielding mobilities up to 4.4 cm2 V–1 s–1) and demonstrate a facile “ink-on-demand” process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium. PMID:24511184

  17. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.

    PubMed

    Banger, Kulbinder K; Peterson, Rebecca L; Mori, Kiyotaka; Yamashita, Yoshihisa; Leedham, Timothy; Sirringhaus, Henning

    2014-01-28

    Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 C we achieve high field-effect electron mobility up to 26 cm(2) V(-1) s(-1). We show that it is possible to solution-process these materials at low process temperature (225-200 C yielding mobilities up to 4.4 cm(2) V(-1) s(-1)) and demonstrate a facile "ink-on-demand" process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium. PMID:24511184

  18. Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.

    PubMed

    Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P H; Bedzyk, Michael J; Ferragut, Rafael; Marks, Tobin J; Facchetti, Antonio

    2015-03-17

    Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. PMID:25733848

  19. Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

    PubMed Central

    Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P. H.; Bedzyk, Michael J.; Ferragut, Rafael; Marks, Tobin J.; Facchetti, Antonio

    2015-01-01

    Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. PMID:25733848

  20. Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices

    NASA Astrophysics Data System (ADS)

    Wellenius, Ian Patrick

    Amorphous oxide semiconductors composed of indium gallium zinc oxide are transparent to visible light and have higher electron mobilities than conventional amorphous semiconductors, such as amorphous silicon. The advantages of higher switching speed, lack of dangling bonds leading to good electronic stability and visible spectrum transparency of amorphous oxide semiconductor devices are expected to lead to numerous applications, including transparent displays and flexible electronics. In this thesis the integration of transparent thin film transistors with transparent electroluminescent pixels was investigated. Compared with display technologies employing organic semiconductors that degrade with exposure to moisture and ultraviolet light, the all-oxide structure of this device is expected to be environmentally robust. This is believed to be the first demonstration of an integrated active matrix pixel using amorphous oxide semiconductor materials as both the light emitter and addressing circuit elements. The transparent active matrix pixel was designed, fabricated and characterized, that integrated amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs) with a europium-doped IGZO thin film electroluminescent (TFEL) device. The integrated circuits were fabricated using room temperature pulsed laser deposition (PLD) of IGZO and ITO thin films onto substrates of Corning 7059 glass, sputter coated with an ITO back contact and subsequent atomic layer deposited ATO high-k dielectric. A second ITO layer is deposited by PLD as a contact and interconnect layer. All deposition steps were carried out at room temperature. In addition to the integration task, an important part of this thesis concerns the investigation of europium as a dopant in different oxide hosts including gallium oxide, gadolinium oxide, and amorphous IGZO. Amorphous IGZO was chosen for the integration task since it could be deposited at room temperature, however it was found that the emission intensity of Eu:IGZO thin films was strongly dependent on the oxygen pressure during deposition. It was determined that Eu3+ emission only occurs when the films are insulating, the result of increased oxygen pressure during deposition. Relatively low concentrations of Eu3+ of 1 mole percent were used for this study, with the intensity of these first generation pixels at 6 cd/m 2. Both gadolinium and gallium oxide films were investigated at higher substrate temperatures with a range of europium dopant concentrations. It was found that the both cubic and monoclinic phases of gadolinium oxide could be deposited, with the phase determined by deposition oxygen pressure. The film structure was analyzed by x-ray diffraction and transmission electron microscopy and optical spectra were obtained using time resolved photoluminescence (performed by a collaborator). These results were found to be in agreement with Stark-split energy levels calculated by another collaborator. Using 2.5 mole percent europium-doped gallium oxide as a host, bright thin film electroluminescent devices with intensities of 221 cd/m2 observed for a TFEL device excited by a symmetric +/-100 V max square pulse train at 1 kHz. This compares favorably with other red TFEL devices in the literature. Comparison with cathodoluminescence and photoluminescence data suggests that these performance metrics can be improved since the optimal concentration of europium by those experimental techniques was found to be near 10 mole percent. Time resolved photoluminescence revealed that radiative relaxation of the Eu3+ dopant could be modeled by two exponential decay components. Comparison of the intensity versus frequency of the electroluminescent data with time resolved photoluminescence data suggests that the faster component dominates the emission of the TFEL device.

  1. Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.

    PubMed

    Park, Won-Tae; Son, Inyoung; Park, Hyun-Woo; Chung, Kwun-Bum; Xu, Yong; Lee, Taegweon; Noh, Yong-Young

    2015-06-24

    Here, we report on a simple and high-rate oxidization method for producing solution-based compound mixtures of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) metal-oxide semiconductors (MOS) for thin-film transistor (TFT) applications. One of the issues for solution-based MOS fabrication is how to sufficiently oxidize the precursor in order to achieve high performance. As the oxidation rate of solution processing is lower than vacuum-based deposition such as sputtering, devices using solution-processed MOS exhibit relatively poorer performance. Therefore, we propose a method to prepare the metal-oxide precursor upon exposure to saturated water vapor in a closed volume for increasing the oxidization efficiency without requiring additional oxidizing agent. We found that the hydroxide rate of the MOS film exposed to water vapor is lower than when unexposed (≤18%). Hence, we successfully fabricated oxide TFTs with high electron mobility (27.9 cm(2)/V·s) and established a rapid process (annealing at 400 °C for 5 min) that is much shorter than the conventional as-deposited long-duration annealing (at 400 °C for 1 h) whose corresponding mobility is even lower (19.2 cm(2)/V·s). PMID:26043206

  2. David Adler Lectureship Award in the Field of Materials Physics Talk: Novel Nitride and Oxide Electronics

    NASA Astrophysics Data System (ADS)

    Pearton, Stephen

    2011-03-01

    Recent progress in development of GaN-based transistors for gas and bio-sensing applications and amorphous IGZO layers for use thin film transistors (TFTs)on flexible substrates, including paper,will be presented. For the detection of gases such as hydrogen, the gateless GaN transistors are typically coated with a catalyst metal such as Pd or Pt to increase the detection sensitivity at room temperature. Functionalizing the surface with oxides, polymers and nitrides is also useful in enhancing the detection sensitivity for gases and ionic solutions.The use of enzymes or adsorbed antibody layers on the semiconductor surface leads to highly specific detection of a broad range of antigens of interest in the medical and security fields. We give examples of recent work showing sensitive detection of glucose, lactic acid, prostate cancer and breast cancer markers and the integration of the sensors with wireless data transmission systems to achieve robust, portable sensors. The amorphous transparent conducting oxide InZnGaO4 (IGZO) is attracting attention because of its high electron mobility (10-50 cm2.V-1.sec-1), high transparency in the visible region of the spectrum and its ability to be deposited with a wide range of conductivities.This raises the possibility of making low-cost electronics on a very wide range of arbitrary surfaces, including paper and plastics. N-type oxides such as zinc oxide, zinc tin oxide, indium gallium oxide, and indium gallium zinc tin oxide (IGZO) exhibit surprisingly high carrier mobilities even for amorphous films deposited at 300K. This has been explained by the fact that the conduction in these materials is predominantly through non-directional s orbitals which are less affected by disorder than the directional sp3 orbitals which control electron transport in Si. Examples of progress and discussion of remaining obstacles to use of IGZO TFTs will be presented Work performed in collaboration with Fan Ren.

  3. Glucose Sensing Using Functionalized Amorphous In-Ga-Zn-O Field-Effect Transistors.

    PubMed

    Du, Xiaosong; Li, Yajuan; Motley, Joshua R; Stickle, William F; Herman, Gregory S

    2016-03-30

    Recent advances in glucose sensing have focused on the integration of sensors into contact lenses to allow noninvasive continuous glucose monitoring. Current technologies focus primarily on enzyme-based electrochemical sensing which requires multiple nontransparent electrodes to be integrated. Herein, we leverage amorphous indium gallium zinc oxide (IGZO) field-effect transistors (FETs), which have found use in a wide range of display applications and can be made fully transparent. Bottom-gated IGZO-FETs can have significant changes in electrical characteristics when the back-channel is exposed to different environments. We have functionalized the back-channel of IGZO-FETs with aminosilane groups that are cross-linked to glucose oxidase and have demonstrated that these devices have high sensitivity to changes in glucose concentrations. Glucose sensing occurs through the decrease in pH during glucose oxidation, which modulates the positive charge of the aminosilane groups attached to the IGZO surface. The change in charge affects the number of acceptor-like surface states which can deplete electron density in the n-type IGZO semiconductor. Increasing glucose concentrations leads to an increase in acceptor states and a decrease in drain-source conductance due to a positive shift in the turn-on voltage. The functionalized IGZO-FET devices are effective in minimizing detection of interfering compounds including acetaminophen and ascorbic acid. These studies suggest that IGZO FETs can be effective for monitoring glucose concentrations in a variety of environments, including those where fully transparent sensing elements may be of interest. PMID:26953727

  4. Facile encapsulation of oxide based thin film transistors by atomic layer deposition based on ozone.

    PubMed

    Fakhri, Morteza; Babin, Nikolai; Behrendt, Andreas; Jakob, Timo; Görrn, Patrick; Riedl, Thomas

    2013-05-28

    A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy- and time-consuming post-treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al2 O3 , TiO2 , ZrO2 ) and metal-oxide channel semiconductors (e.g., zinc-tin-oxide (ZTO), indium-gallium-zinc-oxide (IGZO)). PMID:23592395

  5. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  6. Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

    NASA Astrophysics Data System (ADS)

    Park, Hyun Chan; Scheer, Evelyn; Witting, Karin; Hanika, Markus; Bender, Marcus; Hsu, Hao Chien; Yim, Dong Kil

    2015-11-01

    By controlling a thin indium tin oxide (ITO), indium zinc oxide interface layer between gate insulator and indium gallium zinc oxide (IGZO), the thin-film transistor (TFT) performance can reach higher mobility as conventional IGZO as well as superior stability. For large-area display application, Applied Materials static PVD array coater (Applied Materials GmbH & Co. KG, Alzenau, Germany) using rotary targets has been developed to enable uniform thin layer deposition in display industry. Unique magnet motion parameter optimization in Pivot sputtering coater is shown to provide very uniform thin ITO layer to reach TFT performance with high mobility, not only on small scale, but also on Gen8.5 (2500 × 2200 mm glass size) production system.

  7. Metal Oxide Thin Film Transistors on Paper Substrate: Fabrication, Characterization, and Printing Process

    NASA Astrophysics Data System (ADS)

    Choi, Nack-Bong

    Flexible electronics is an emerging next-generation technology that offers many advantages such as light weight, durability, comfort, and flexibility. These unique features enable many new applications such as flexible display, flexible sensors, conformable electronics, and so forth. For decades, a variety of flexible substrates have been demonstrated for the application of flexible electronics. Most of them are plastic films and metal foils so far. For the fundamental device of flexible circuits, thin film transistors (TFTs) using poly silicon, amorphous silicon, metal oxide and organic semiconductor have been successfully demonstrated. Depending on application, low-cost and disposable flexible electronics will be required for convenience. Therefore it is important to study inexpensive substrates and to explore simple processes such as printing technology. In this thesis, paper is introduced as a new possible substrate for flexible electronics due to its low-cost and renewable property, and amorphous indium gallium zinc oxide (a-IGZO) TFTs are realized as the promising device on the paper substrate. The fabrication process and characterization of a-IGZO TFT on the paper substrate are discussed. a-IGZO TFTs using a polymer gate dielectric on the paper substrate demonstrate excellent performances with field effect mobility of ˜20 cm2 V-1 s-1, on/off current ratio of ˜106, and low leakage current, which show the enormous potential for flexible electronics application. In order to complement the n-channel a-IGZO TFTs and then enable complementary metal-oxide semiconductor (CMOS) circuit architectures, cuprous oxide is studied as a candidate material of p-channel oxide TFTs. In this thesis, a printing process is investigated as an alternative method for the fabrication of low-cost and disposable electronics. Among several printing methods, a modified offset roll printing that prints high resolution patterns is presented. A new method to fabricate a high resolution printing plate is investigated and the most favorable condition to transfer ink from a blanket to a cliche is studied. Consequently, a high resolution cliche is demonstrated and the printed patterns of 10mum width and 6mum line spacing are presented. In addition, the top gate a-IGZO TFTs with channel width/length of 12/6mum is successfully demonstrated by printing etch-resists. This work validates the compatibility of a-IGZO TFT on paper substrate for the disposable microelectronics application and presents the potential of low-cost and high resolution printing technology.

  8. The effect of nitrous oxide plasma treatment on the bias temperature stress of metal oxide thin film transistors with high mobility

    NASA Astrophysics Data System (ADS)

    Tseng, Wei-Hao; Fang, Shao-Wei; Lu, Chia-Yang; Chuang, Hung-Yang; Chang, Fan-Wei; Lin, Guan-Yu; Chen, Tsu-Wei; Ma, Kang-Hung; Chen, Hong-Syu; Chen, Teng-Ke; Chen, Yu-Hung; Lee, Jen-Yu; Shih, Tsung-Hsiang; Ting, Hung-Che; Chen, Chia-Yu; Lin, Yu-Hsin; Hong, Hong-Jye

    2015-01-01

    In this work, the effects of nitrous oxide plasma treatment on the negative bias temperature stress of indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) were reported. ITZO TFTs were more suitable for the back channel etched-type device structure because they could withstand both Al- and Cu-acid damage. The initial threshold voltage range could be controlled to within 1 V. The root cause of poor negative bias temperature stress for ITZO was likely due to a higher mobility (?3.3 times) and more carbon related contamination bonds (?5.9 times) relative to IGZO. Finally, 65? active-matrix organic light-emitting diode televisions using the ITZO and IGZO TFTs were fabricated.

  9. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    PubMed

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-01-01

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices. PMID:26677773

  10. Origin of major donor states in In–Ga–Zn oxide

    SciTech Connect

    Nakashima, Motoki; Oota, Masashi; Ishihara, Noritaka; Nonaka, Yusuke; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi

    2014-12-07

    To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (V{sub O}), carrier concentration, and conductivity are investigated by hard X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, thermal desorption spectroscopy, and Hall effect measurements. The results of these experiments suggest that the origin of major donor states is H occupancy of V{sub O} sites. Furthermore, we use first-principles calculations to investigate the influence of the coexistence of V{sub O} and H in crystalline InGaO{sub 3}(ZnO){sub m} (m = 1). The results indicate that when H is trapped in V{sub O}, a stable complex is created that serves as a shallow-level donor.

  11. Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

    SciTech Connect

    Jo, Jeong-Wan; Park, Sung Kyu E-mail: skpark@cau.ac.kr; Kim, Yong-Hoon E-mail: skpark@cau.ac.kr

    2014-07-28

    In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.

  12. Characterization of Amorphous Zinc Tin Oxide Semiconductors

    SciTech Connect

    Rajachidambaram, Jaana Saranya; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Varga, Tamas; Flynn, Brendan T.; Thevuthasan, Suntharampillai; Herman, Gregory S.

    2012-06-12

    Amorphous zinc tin oxide (ZTO) was investigated to determine the effect of deposition and post annealing conditions on film structure, composition, surface contamination, and thin film transistor (TFT) device performance. X-ray diffraction results indicated that the ZTO films remain amorphous even after annealing to 600 C. We found that the bulk Zn:Sn ratio of the sputter deposited films were slightly tin rich compared to the composition of the ceramic sputter target, and there was a significant depletion of zinc at the surface. X-ray photoelectron spectroscopy also indicated that residual surface contamination depended strongly on the sample post-annealing conditions where water, carbonate and hydroxyl species were absorbed to the surface. Electrical characterization of ZTO films, using TFT test structures, indicated that mobilities as high as 17 cm2/Vs could be obtained for depletion mode devices.

  13. The Structure and Properties of Amorphous Indium Oxide

    PubMed Central

    2015-01-01

    A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-to-crystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmission electron microscopy (HRTEM), electron diffraction, extended X-ray absorption fine structure (EXAFS), and ab initio molecular dynamics (MD) liquid-quench simulation. On the basis of excellent agreement between the EXAFS and MD results, a model of the amorphous oxide structure as a network of InOx polyhedra was constructed. Mechanisms for the transport properties observed in the crystalline, amorphous-to-crystalline, and amorphous deposition regions are presented, highlighting a unique structure–property relationship. PMID:25678743

  14. Acidic amorphous silica prepared from iron oxide of bacterial origin.

    PubMed

    Hashimoto, Hideki; Itadani, Atsushi; Kudoh, Takayuki; Kuroda, Yasushige; Seno, Masaharu; Kusano, Yoshihiro; Ikeda, Yasunori; Nakanishi, Makoto; Fujii, Tatsuo; Takada, Jun

    2013-02-01

    Microporous and mesoporous silica derived from biogenous iron oxide is an attractive catalyst for various organic reactions. Biogenous iron oxide contains structural silicon, and amorphous silica remains after iron oxide is dissolved in concentrated hydrochloric acid. The amorphous silica containing slight amounts of iron (Si/Fe = ?150) is composed of ?6-nm-diameter granular particles. The amorphous silica has a large surface area of 540 m(2)/g with micropores (1.4 nm) and mesopores (<3 nm). By using pyridine vapor as a probe molecule to evaluate the active sites in the amorphous silica, it was found that this material has strong Brnsted and Lewis acid sites. When the catalytic performance of this material was evaluated for reactions including the ring opening of epoxides and Friedel-Crafts-type alkylations, which are known to be catalyzed by acid catalysts, this material showed yields higher than those obtained with common silica materials. PMID:23331569

  15. Amorphous copper tungsten oxide with tunable band gaps

    SciTech Connect

    Chen Le; Shet, Sudhakar; Tang Houwen; Wang Heli; Yan Yanfa; Turner, John; Al-Jassim, Mowafak; Ahn, Kwang-soon

    2010-08-15

    We report on the synthesis of amorphous copper tungsten oxide thin films with tunable band gaps. The thin films are synthesized by the magnetron cosputtering method. We find that due to the amorphous nature, the Cu-to-W ratio in the films can be varied without the limit of the solubility (or phase separation) under appropriate conditions. As a result, the band gap and conductivity type of the films can be tuned by controlling the film composition. Unfortunately, the amorphous copper tungsten oxides are not stable in aqueous solution and are not suitable for the application of photoelectrochemical splitting of water. Nonetheless, it provides an alternative approach to search for transition metal oxides with tunable band gaps.

  16. Amorphous tin-cadmium oxide films and the production thereof

    DOEpatents

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  17. Tungsten oxide nanowire synthesis from amorphous-like tungsten films

    NASA Astrophysics Data System (ADS)

    Seelaboyina, Raghunandan

    2016-03-01

    A synthesis technique which can lead to direct integration of tungsten oxide nanowires onto silicon chips is essential for preparing various devices. The conversion of amorphous tungsten films deposited on silicon chips by pulsed layer deposition to nanowires by annealing is an apt method in that direction. This perspective discusses the ingenious features of the technique reported by Dellasega et al on the various aspects of tungsten oxide nanowire synthesis.

  18. Tungsten oxide nanowire synthesis from amorphous-like tungsten films.

    PubMed

    Seelaboyina, Raghunandan

    2016-03-18

    A synthesis technique which can lead to direct integration of tungsten oxide nanowires onto silicon chips is essential for preparing various devices. The conversion of amorphous tungsten films deposited on silicon chips by pulsed layer deposition to nanowires by annealing is an apt method in that direction. This perspective discusses the ingenious features of the technique reported by Dellasega et al on the various aspects of tungsten oxide nanowire synthesis. PMID:26871521

  19. Natural realgar and amorphous AsS oxidation kinetics

    NASA Astrophysics Data System (ADS)

    Lengke, Maggy F.; Tempel, Regina N.

    2003-03-01

    The oxidation rates of natural realgar and amorphous synthetic AsS by dissolved oxygen were evaluated using mixed flow reactors at pH 7.2 to 8.8 and dissolved oxygen contents of 5.9 to 16.5 ppm over a temperature range of 25 to 40C. The ratios of As/S are stoichiometric for all amorphous AsS oxidation experiments except for two experiments conducted at pH 8.8. In these experiments, stoichiometric ratios of As/S were only observed in the early stages of AsS (am) oxidation whereas lower As/S ratios were observed during steady state. For realgar oxidation experiments, the As/S ratio is less than the stoichiometric ratio of realgar, ranging between 0.61 and 0.71. This nonstoichiometric release of As and S to solution indicates that realgar oxidation is more selective for S after the rates of oxidation become constant. All measured oxidation rates at 25C can be described within experimental uncertainties as follows: Table 1

  20. Tungsten oxide nanowires grown on amorphous-like tungsten films

    NASA Astrophysics Data System (ADS)

    Dellasega, D.; Pietralunga, S. M.; Pezzoli, A.; Russo, V.; Nasi, L.; Conti, C.; Vahid, M. J.; Tagliaferri, A.; Passoni, M.

    2015-09-01

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500-710 C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W18O49-Magneli phase to monoclinic WO3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 ?m with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures.

  1. Tungsten oxide nanowires grown on amorphous-like tungsten films.

    PubMed

    Dellasega, D; Pietralunga, S M; Pezzoli, A; Russo, V; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A; Passoni, M

    2015-09-11

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500-710 C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W18O49-Magneli phase to monoclinic WO3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 ?m with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. PMID:26292084

  2. Amorphization and Recrystallization of the ABO(3) Oxides

    SciTech Connect

    Meldrum, Alkiviathes; Boatner, Lynn A.; Weber, William J.); Ewing, Rodney C.

    2002-01-31

    Single crystals of the ABO3 phases CaTiO3, SrTiO3, BaTiO3, LiNbO3, KNbO3, LiTaO3, and KTaO3 were irradiated by 800 keV Kr+, Xe+, or Ne+ ions over the temperature range from 20 to 1100 K. The critical amorphization temperature, Tc, above which radiation-induced amorphization does not occur varied from approximately 450 K for the titanate compositions to more than 850 K for the tantalates. While the absolute ranking of increasing critical amorphization temperatures could not be explained by any simple physical parameter associated with the ABO3 oxides, within each chemical group defined by the B-site cation (i.e., within the titanates, niobates, and tantalates), Tc tends to increase with increasing mass of the A-site cation. Tc was lower for the Ne+ irradiations as compared to Kr+, but it was approximately the same for the irradiations with Kr+ or Xe+. Thermal recrystallization experiments were performed on the ion-beam-amorphized thin sections in situ in the transmission electron microscope (TEM). In the high vacuum environment of the microscope, the titanates recrystallized epitaxially from the thick areas of the TEM specimens at temperatures of 800 to 850 K. The niobates and tantalates did not recrystallize epitaxially, but instead, new crystals nucleated and grew in the amorphous region in the temperature range 825 to 925 K. These new crystallites apparently retain some''memory'' of the original crystal orientation prior to ion-beam amorphization.

  3. Laser direct patterning of indium tin oxide for defining a channel of thin film transistor.

    PubMed

    Wang, Jian-Xun; Kwon, Sang Jik; Han, Jae-Hee; Cho, Eou Sik

    2013-11-01

    In this work, using a Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser, a direct patterning of indium tin oxide (ITO) channel was realized on glass substrates and the results were compared and analyzed in terms of the effect of repetition rate, scanning speed on etching characteristics. The results showed that the laser conditions of 40 kHz repetition rate with a scanning speed of 500 mm/s were appropriate for the channeling of ITO electrodes. The length of laser-patterned channel was maintained at about 55 microm. However, residual spikes (about 50 nm in height) of ITO were found to be formed at the edges of the laser ablated area and a few ITO residues remained on the glass substrate after laser scanning. By dipping the laser-ablated ITO film in ITO diluted etchant (ITO etchant/DI water: 1/10) at 50 degrees C for 3 min, the spikes and residual ITO were effectively removed. At last, using the laser direct patterning, a bottom-source-drain indium gallium zinc oxide thin film transistor (IGZO-TFT) was fabricated. It is successfully demonstrated that the laser direct patterning can be utilized instead of photolithography to simplify the fabrication process of TFT channel, resulting in the increase of productivity and reduction of cost. PMID:24245327

  4. Bismuth oxide coated amorphous manganese dioxide for electrochemical capacitors

    NASA Astrophysics Data System (ADS)

    Li, Xiaofeng; Zhang, Linsen; Dong, Huichao; Xia, Tongchi; Huang, Zhigang

    2015-05-01

    With MnSO4, NaOH and K2S2O8 as the raw materials, the amorphous and ?-type manganese dioxide (MnO2) is separately prepared by using different chemical precipitation-oxidation methods. The results of charge-discharge and electrochemical impedance spectroscopy (EIS) tests show that (i) the specific capacitance of the amorphous MnO2 reaches to 301.2 F g-1 at a current density of 200 mA g-1 and its capacitance retention rate after 2000 cycles is 97%, which is obviously higher than 250.8 F g-1 and 71% of the ?-type one, respectively; (ii) good electrochemical capacitance properties of the amorphous MnO2 should be contributed to easy insertion/extraction of ions within the material; (iii) when 5 wt% Bi2O3 is coated on the amorphous MnO2, its specific capacitance increases to 352.8 F g-1 and the capacitance retention rate is 90% after 2000 cycles.

  5. Oxidation of amorphous Ni--Nb films: Surface spectroscopy studies

    SciTech Connect

    Christensen, T.M.

    1988-05-01

    Sputter deposited amorphous Ni--Nb alloy films have been proposed as thin-film metallization layers for high-temperature (>300 /sup 0/C) compound semiconductor applications. We have used x-ray photoelectron spectroscopy (XPS) to investigate the oxidation behavior of 1-..mu..m-thick, sputter deposited, amorphous Ni/sub 60/ Nb/sub 40/ films exposed to oxygen or room air at temperatures in the range 30--500 /sup 0/C for times of 5 min to 45 h. The initial stages of oxidation were examined in situ at oxygen partial pressures below 1 x 10/sup -6/ Torr. At all temperatures, Nb/sub 2/ O/sub 5/ formed on the surface; this remained the dominant corrosion product for specimens oxidized in air for 45 h at temperatures up to 200 /sup 0/C. Angle-resolved XPS measurements indicated that a thin (5--10 A) NiO layer formed on the surface of the Nb/sub 2/ O/sub 5/ after long exposures at these temperatures. Specimens oxidized at temperatures above 240 /sup 0/C, however, quickly developed a thick (>100 A), crystalline NiO layer on top of the Nb/sub 2/O/sub 5/.

  6. Transparent amorphous zinc oxide thin films for NLO applications

    NASA Astrophysics Data System (ADS)

    Zawadzka, A.; P?ciennik, P.; Strzelecki, J.; Sahraoui, B.

    2014-11-01

    This review focuses on the growth and optical properties of amorphous zinc oxide (ZnO) thin films. A high quality ZnO films fabricated by dip-coating (sol-gel) method were grown on quartz and glass substrates at temperature equal to 350 K. The amorphous nature of the films was verified by X-ray diffraction. Atomic Force Microscopy was used to evaluate the surface morphology of the films. The optical characteristics of amorphous thin films have been investigated in the spectral range 190-1100 nm. Measurement of the polarized optical properties was shows a high transmissivity (80-99%) and low absorptivity (<5%) in the visible and near infrared regions at different angles of incidence. Linear optical properties were investigated by classic and Time-Resolved Photoluminescence (TRPL) measurements. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. An innovative TRPL technique has enabled the measurement of the photoluminescence decay time as a function of temperature. TRPL measurements reveal a multiexponential decay behavior typical for amorphous thin films. Second and third harmonic generation measurements were performed by means of the rotational Maker fringe technique using Nd:YAG laser at 1064 nm in picosecond regime for investigations of the nonlinear optical properties. The obtained values of second and third order nonlinear susceptibilities were found to be high enough for the potential applications in the optical switching devices based on refractive index changes. Presented spectra confirm high structural and optical quality of the investigated zinc oxide thin films.

  7. Ambient atmosphere-processable, printable Cu electrodes for flexible device applications: structural welding on a millisecond timescale of surface oxide-free Cu nanoparticles.

    PubMed

    Oh, Sang-Jin; Jo, Yejin; Lee, Eun Jung; Lee, Sun Sook; Kang, Young Hun; Jeon, Hye-Ji; Cho, Song Yun; Park, Jin-Seong; Seo, Yeong-Hui; Ryu, Beyong-Hwan; Choi, Youngmin; Jeong, Sunho

    2015-03-01

    Recently, various functional devices based on printing technologies have been of paramount interest, owing to their characteristic processing advantages along with excellent device performance. In particular, printable metallic electrodes have drawn attention in a variety of optoelectronic applications; however, research into printable metallic nanoparticles has been limited mainly to the case of an environmentally stable Ag phase. Despite its earth-abundance and highly conductive nature, the Cu phase, to date, has not been exploited as an ambient atmosphere-processable, printable material due to its critical oxidation problem in air. In this study, we demonstrate a facile route for generating highly conductive, flexible Cu electrodes in air by introducing the well-optimized photonic sintering at a time frame of 10(-3) s, at which the photon energy, rather than conventional thermal energy, is instantly provided. It is elucidated here how the surface oxide-free, printed Cu particulate films undergo chemical structural/microstructural evolution depending on the instantly irradiated photon energy, and a successful demonstration is provided of large-area, flexible, printed Cu conductors on various substrates, including polyimide (PI), polyethersulfone (PES), polyethylene terephthalate (PET), and paper. The applicability of the resulting printed Cu electrodes is evaluated via implementation into both flexible capacitor devices and indium-gallium-zinc oxide (IGZO) flexible thin-film transistors. PMID:25626472

  8. Amorphous oxide as a novel efficient catalyst for direct selective oxidation of methanol to dimethoxymethane.

    PubMed

    Royer, Sébastien; Sécordel, Xavier; Brandhorst, Markus; Dumeignil, Franck; Cristol, Sylvain; Dujardin, Christophe; Capron, Mickaël; Payen, Edmond; Dubois, Jean-Luc

    2008-02-21

    We report for the first time the use of an amorphous oxide catalyst for the selective oxidation of methanol in the gas phase, leading at 553 K to the production of dimethoxymethane with a selectivity as high as 90% at high methanol conversion (68%). PMID:18253530

  9. Lithium ion transport in a model of amorphous polyethylene oxide.

    SciTech Connect

    Boinske, P. T.; Curtiss, L.; Halley, J. W.; Lin, B.; Sutjianto, A.; Chemical Engineering; Univ. of Minnesota

    1996-01-01

    We have made a molecular dynamics study of transport of a single lithium ion in a previously reported model of amorphous polyethylene oxide. New ab initio calculations of the interaction of the lithium ion with 1,2-dimethoxyethane and with dimethyl ether are reported which are used to determine force fields for the simulation. We report preliminary calculations of solvation energies and hopping barriers and a calculation of the ionic conductivity which is independent of any assumptions about the mechanism of ion transport. We also report some details of a study of transport of the trapped lithium ion on intermediate time and length scales.

  10. Bacterial adhesion on amorphous and crystalline metal oxide coatings.

    PubMed

    Almaguer-Flores, Argelia; Silva-Bermudez, Phaedra; Galicia, Rey; Rodil, Sandra E

    2015-12-01

    Several studies have demonstrated the influence of surface properties (surface energy, composition and topography) of biocompatible materials on the adhesion of cells/bacteria on solid substrates; however, few have provided information about the effect of the atomic arrangement or crystallinity. Using magnetron sputtering deposition, we produced amorphous and crystalline TiO2 and ZrO2 coatings with controlled micro and nanoscale morphology. The effect of the structure on the physical-chemical surface properties was carefully analyzed. Then, we studied how these parameters affect the adhesion of Escherichia coli and Staphylococcus aureus. Our findings demonstrated that the nano-topography and the surface energy were significantly influenced by the coating structure. Bacterial adhesion at micro-rough (2.6 μm) surfaces was independent of the surface composition and structure, contrary to the observation in sub-micron (0.5 μm) rough surfaces, where the crystalline oxides (TiO2>ZrO2) surfaces exhibited higher numbers of attached bacteria. Particularly, crystalline TiO2, which presented a predominant acidic nature, was more attractive for the adhesion of the negatively charged bacteria. The information provided by this study, where surface modifications are introduced by means of the deposition of amorphous or crystalline oxide coatings, offers a route for the rational design of implant surfaces to control or inhibit bacterial adhesion. PMID:26354243

  11. Absorption of ac fields in amorphous indium-oxide films

    SciTech Connect

    Ovadyahu, Z.

    2014-08-20

    Absorption data from applied ac fields in Anderson-localized amorphous indium-oxide (In{sub x}O) films are shown to be frequency and disorder dependent. The absorption shows a roll-off at a frequency which is much lower than the electron-electron scattering rate of the material when it is in the diffusive regime. This is interpreted as evidence for discreteness of the energy spectrum of the deeply localized regime. This is consistent with recent many-body localization scenarios. As the metal-insulator transition is approached, the absorption shifts to higher frequencies. Comparing with the previously obtained results on the crystalline version of indium-oxide (In{sub 2}O{sub 3−x}) implies a considerably higher inelastic electron-phonon scattering rate in the amorphous material. The range over which the absorption versus frequency decreases may indicate that a wide distribution of localization length is a common feature in these systems.

  12. Unification of catalytic water oxidation and oxygen reduction reactions: amorphous beat crystalline cobalt iron oxides.

    PubMed

    Indra, Arindam; Menezes, Prashanth W; Sahraie, Nastaran Ranjbar; Bergmann, Arno; Das, Chittaranjan; Tallarida, Massimo; Schmeier, Dieter; Strasser, Peter; Driess, Matthias

    2014-12-17

    Catalytic water splitting to hydrogen and oxygen is considered as one of the convenient routes for the sustainable energy conversion. Bifunctional catalysts for the electrocatalytic oxygen reduction reaction (ORR) and the oxygen evolution reaction (OER) are pivotal for the energy conversion and storage, and alternatively, the photochemical water oxidation in biomimetic fashion is also considered as the most useful way to convert solar energy into chemical energy. Here we present a facile solvothermal route to control the synthesis of amorphous and crystalline cobalt iron oxides by controlling the crystallinity of the materials with changing solvent and reaction time and further utilize these materials as multifunctional catalysts for the unification of photochemical and electrochemical water oxidation as well as for the oxygen reduction reaction. Notably, the amorphous cobalt iron oxide produces superior catalytic activity over the crystalline one under photochemical and electrochemical water oxidation and oxygen reduction conditions. PMID:25469760

  13. Ion beam mixing of marker layers into amorphous aluminum oxide

    SciTech Connect

    Cooper, E.A.; Nastasi, M.

    1993-10-01

    Thin layers of various marker species embedded in amorphous Al{sub 2}O{sub 3} were ion beam mixed with 210 keV Ar in a temperature range of {minus}166C--790C. All of the metal markers (Ag, Fe, and Zr) were found to mix only to a ballistic level. The oxide markers studied were Fe{sub 2}O{sub 3}, Cr{sub 2}O{sub 3}, Y{sub 2}O{sub 3}, and ZrO{sub 2}. Thermally assisted ion mixing was seen, in decreasing amounts, in Fe{sub 2}O{sub 3}, Y{sub 2}O{sub 3}, and Cr{sub 2}O{sub 3}. No thermally assisted ion beam mixing was observed for ZrO{sub 2} or the metal markers.

  14. Graphitic carbon growth on crystalline and amorphous oxide substrates using molecular beam epitaxy

    PubMed Central

    2011-01-01

    We report graphitic carbon growth on crystalline and amorphous oxide substrates by using carbon molecular beam epitaxy. The films are characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. The formations of nanocrystalline graphite are observed on silicon dioxide and glass, while mainly sp2 amorphous carbons are formed on strontium titanate and yttria-stabilized zirconia. Interestingly, flat carbon layers with high degree of graphitization are formed even on amorphous oxides. Our results provide a progress toward direct graphene growth on oxide materials. PACS: 81.05.uf; 81.15.Hi; 78.30.Ly. PMID:22029707

  15. Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice

    NASA Astrophysics Data System (ADS)

    Abe, Katsumi; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo

    2012-08-01

    We fabricated transparent amorphous oxide semiconductor superlattices composed of In-Ga-Zn-O (a-IGZO) well layers and Ga2O3 (a-Ga2O3) barrier layers, and investigated their optical absorption properties to examine energy quantization in the a-IGZO well layer. The Tauc gap of a-IGZO well layers monotonically increases with decreasing well thickness at ?5 nm. The thickness dependence of the Tauc gap is quantitatively explained by a Krnig-Penny model employing a conduction band offset of 1.2 eV between the a-IGZO and the a-Ga2O3, and the effective masses of 0.35m0 for the a-IGZO well layer and 0.5m0 for the a-Ga2O3 barrier layer, where m0 is the electron rest mass. This result demonstrates the quantization in the a-IGZO well layer. The phase relaxation length of the a-IGZO is estimated to be larger than 3.5 nm.

  16. Electrically conducting ternary amorphous fully oxidized materials and their application

    NASA Technical Reports Server (NTRS)

    Giauque, Pierre (Inventor); Nicolet, Marc (Inventor); Gasser, Stefan M. (Inventor); Kolawa, Elzbieta A. (Inventor); Cherry, Hillary (Inventor)

    2004-01-01

    Electrically active devices are formed using a special conducting material of the form Tm--Ox mixed with SiO2 where the materials are immiscible. The immiscible materials are forced together by using high energy process to form an amorphous phase of the two materials. The amorphous combination of the two materials is electrically conducting but forms an effective barrier.

  17. Increased corrosion resistance of stent materials by converting current surface film of polycrystalline oxide into amorphous oxide.

    PubMed

    Shih, C C; Lin, S J; Chung, K H; Chen, Y L; Su, Y Y

    2000-11-01

    Current efforts of new stent technology have been aimed largely at the improvement of intravascular stent biocompatibility. Among the chemical characteristics of metallic stents, surface oxide corrosion properties are paramount. Using our unique technique, the currently marketed 316 L stainless steel and nitinol stent wires covered with polycrystalline oxide were chemically etched and then passivated to form amorphous oxide. Excellent metallic-stent corrosion resistance with an amorphous oxide surface was demonstrated in our previous in vitro study. For in vivo validation, we compared the corrosion behavior of different oxide surfaces on various forms of test wires in the abdominal aorta of mongrel dogs using open-circuit potential and cyclic anodic polarization measurements. After conduction, the retrieved test wires were observed under scanning electron microscope. No passivity breakdown was found for wires covered with amorphous oxide, while wires with polycrystalline oxide showed breakdown at potentials between +0.2 to + 0.6 V. It has been proven that severe pitting or crevice corrosion occurred on the surface of polycrystalline oxide, while the surface of amorphous oxide was free of degradations in our experiment. We have demonstrated that this amorphous oxide coating on metallic material provides better corrosion resistance, not only in vitro but also in vivo, and it is superior not only in strength safety but also in medical device biocompatibility. PMID:10951371

  18. Probing of 2 dimensional confinement-induced structural transitions in amorphous oxide thin film

    PubMed Central

    Lee, Sung Keun; Ahn, Chi Won

    2014-01-01

    Whereas the atomic structure of surface of crystals is known to be distinct from that of bulk, experimental evidence for thickness-induced structural transitions in amorphous oxides is lacking. We report the NMR result for amorphous alumina with varying thickness from bulk up to 5?nm, revealing the nature of structural transitions near amorphous oxide surfaces/interfaces. The coordination environments in the confined amorphous alumina thin film are distinct from those of bulk, highlighted by a decrease in the fractions of high-energy clusters (and thus the degree of disorder) with thickness. The result implies that a wide range of variations in amorphous structures may be identified by controlling its dimensionality. PMID:24569515

  19. Probing the role of Ga in amorphous conducting oxides through local structure studies

    NASA Astrophysics Data System (ADS)

    Moffitt, Stephanie; Zhu, Qimin; Ma, Qing; Buchholz, Donald; Chang, Robert; Mason, Thomas; Marks, Tobin; Bedzyk, Michael

    2015-03-01

    The study of amorphous (a-) conducting oxides is an emerging field. The lack of grain boundaries, smooth surfaces, and low temperature deposition position these materials as ideal candidates for large area applications and flexible electronics. Most impressively, these materials maintain high electron mobility in the amorphous state. These benefits have led the recent commercialization of a-IGZO (Ga and Zn doped indium oxide) as a replacement for a-Si as the channel layer of thin film transistors in display technology. Despite this success, fundamental understanding of structure-property relationships is still lacking and must be improved to guide further development of amorphous conducting oxides. X-ray absorption spectroscopy (XAS) is one of the few tools that can be used to probe the structure of amorphous materials. Amorphous indium oxide doped with Ga (a-IGO) is a model system to help develop the role of dopants in amorphous oxides. An in depth XAS study was carried out to determine inter-atomic distances, coordination numbers, and structural disorder parameters as a function of Ga doping level. The correlation between XAS-derived structural features and the dopant-dependent evolution of both electrical properties and thermal stability of a-IGO will be discussed. This work is supported by the NSF MRSEC Program No. DMR1121262.

  20. Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

    SciTech Connect

    Liu, Kuan-Hsien; Chou, Wu-Ching; Chang, Ting-Chang; Wu, Ming-Siou; Hung, Yi-Syuan; Sze, Simon M.; Hung, Pei-Hua; Chu, Ann-Kuo; Hsieh, Tien-Yu; Yeh, Bo-Liang

    2014-03-31

    This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.

  1. Remarkably stable amorphous metal oxide grown on Zr-Cu-Be metallic glass

    PubMed Central

    Lim, Ka Ram; Kim, Chang Eun; Yun, Young Su; Kim, Won Tae; Soon, Aloysius; Kim, Do Hyang

    2015-01-01

    In the present study, we investigated the role of an aliovalent dopant upon stabilizing the amorphous oxide film. We added beryllium into the Zr50Cu50 metallic glass system, and found that the amorphous oxide layer of Be-rich phase can be stabilized even at elevated temperature above Tg of the glass matrix. The thermal stability of the amorphous oxide layer is substantially enhanced due to Be addition. As confirmed by high-temperature cross-section HR-TEM, fully disordered Be-added amorphous layer is observed, while the rapid crystallization is observed without Be. To understand the role of Be, we employed ab-initio molecular dynamics to compare the mobility of ions with/without Be dopant, and propose a disordered model where Be dopant occupies Zr vacancy and induces structural disorder to the amorphous phase. We find that the oxygen mobility is slightly suppressed due to Be dopant, and Be mobility is unexpectedly lower than that of oxygen, which we attribute to the aliovalent nature of Be dopant whose diffusion always accompany multiple counter-diffusion of other ions. Here, we explain the origin of superior thermal stability of amorphous oxide film in terms of enhanced structural disorder and suppressed ionic mobility due to the aliovalent dopant. PMID:26658671

  2. Remarkably stable amorphous metal oxide grown on Zr-Cu-Be metallic glass.

    PubMed

    Lim, Ka Ram; Kim, Chang Eun; Yun, Young Su; Kim, Won Tae; Soon, Aloysius; Kim, Do Hyang

    2015-01-01

    In the present study, we investigated the role of an aliovalent dopant upon stabilizing the amorphous oxide film. We added beryllium into the Zr50Cu50 metallic glass system, and found that the amorphous oxide layer of Be-rich phase can be stabilized even at elevated temperature above Tg of the glass matrix. The thermal stability of the amorphous oxide layer is substantially enhanced due to Be addition. As confirmed by high-temperature cross-section HR-TEM, fully disordered Be-added amorphous layer is observed, while the rapid crystallization is observed without Be. To understand the role of Be, we employed ab-initio molecular dynamics to compare the mobility of ions with/without Be dopant, and propose a disordered model where Be dopant occupies Zr vacancy and induces structural disorder to the amorphous phase. We find that the oxygen mobility is slightly suppressed due to Be dopant, and Be mobility is unexpectedly lower than that of oxygen, which we attribute to the aliovalent nature of Be dopant whose diffusion always accompany multiple counter-diffusion of other ions. Here, we explain the origin of superior thermal stability of amorphous oxide film in terms of enhanced structural disorder and suppressed ionic mobility due to the aliovalent dopant. PMID:26658671

  3. Remarkably stable amorphous metal oxide grown on Zr-Cu-Be metallic glass

    NASA Astrophysics Data System (ADS)

    Lim, Ka Ram; Kim, Chang Eun; Yun, Young Su; Kim, Won Tae; Soon, Aloysius; Kim, Do Hyang

    2015-12-01

    In the present study, we investigated the role of an aliovalent dopant upon stabilizing the amorphous oxide film. We added beryllium into the Zr50Cu50 metallic glass system, and found that the amorphous oxide layer of Be-rich phase can be stabilized even at elevated temperature above Tg of the glass matrix. The thermal stability of the amorphous oxide layer is substantially enhanced due to Be addition. As confirmed by high-temperature cross-section HR-TEM, fully disordered Be-added amorphous layer is observed, while the rapid crystallization is observed without Be. To understand the role of Be, we employed ab-initio molecular dynamics to compare the mobility of ions with/without Be dopant, and propose a disordered model where Be dopant occupies Zr vacancy and induces structural disorder to the amorphous phase. We find that the oxygen mobility is slightly suppressed due to Be dopant, and Be mobility is unexpectedly lower than that of oxygen, which we attribute to the aliovalent nature of Be dopant whose diffusion always accompany multiple counter-diffusion of other ions. Here, we explain the origin of superior thermal stability of amorphous oxide film in terms of enhanced structural disorder and suppressed ionic mobility due to the aliovalent dopant.

  4. Amorphous mixed-metal hydroxide nanostructures for advanced water oxidation catalysts

    NASA Astrophysics Data System (ADS)

    Gao, Y. Q.; Liu, X. Y.; Yang, G. W.

    2016-02-01

    The design of highly efficient, durable, and earth-abundant catalysts for the oxygen evolution reaction (OER) is crucial in order to promote energy conversion and storage processes. Here, we synthesize amorphous mixed-metal (Ni-Fe) hydroxide nanostructures with a homogeneous distribution of Ni/Fe as well as a tunable Ni/Fe ratio by a simple, facile, green and low-cost electrochemical technique, and we demonstrate that the synthesized amorphous nanomaterials possess ultrahigh activity and super long-term cycle stability in the OER process. The amorphous Ni0.71Fe0.29(OH)x nanostructure affords a current density of 10 mA cm-2 at an overpotential of a mere 0.296 V and a small Tafel slope of 58 mV dec-1, while no deactivation is detected in the CV testing even up to 30 000 cycles, which suggests the promising application of these amorphous nanomaterials in electrochemical oxidation. Meanwhile, the distinct catalytic activities among these amorphous Ni-Fe hydroxide nanostructures prompts us to take notice of the composition of the alloy hydroxides/oxides when studying their catalytic properties, which opens an avenue for the rational design and controllable preparation of such amorphous nanomaterials as advanced OER electrocatalysts.The design of highly efficient, durable, and earth-abundant catalysts for the oxygen evolution reaction (OER) is crucial in order to promote energy conversion and storage processes. Here, we synthesize amorphous mixed-metal (Ni-Fe) hydroxide nanostructures with a homogeneous distribution of Ni/Fe as well as a tunable Ni/Fe ratio by a simple, facile, green and low-cost electrochemical technique, and we demonstrate that the synthesized amorphous nanomaterials possess ultrahigh activity and super long-term cycle stability in the OER process. The amorphous Ni0.71Fe0.29(OH)x nanostructure affords a current density of 10 mA cm-2 at an overpotential of a mere 0.296 V and a small Tafel slope of 58 mV dec-1, while no deactivation is detected in the CV testing even up to 30 000 cycles, which suggests the promising application of these amorphous nanomaterials in electrochemical oxidation. Meanwhile, the distinct catalytic activities among these amorphous Ni-Fe hydroxide nanostructures prompts us to take notice of the composition of the alloy hydroxides/oxides when studying their catalytic properties, which opens an avenue for the rational design and controllable preparation of such amorphous nanomaterials as advanced OER electrocatalysts. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08989a

  5. Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

    NASA Astrophysics Data System (ADS)

    Chen, Te-Chih; Chang, Ting-Chang; Hsieh, Tien-Yu; Lu, Wei-Siang; Jian, Fu-Yen; Tsai, Chih-Tsung; Huang, Sheng-Yao; Lin, Chia-Sheng

    2011-07-01

    This letter investigates the degradation mechanism of amorphous indium-gallium-zinc oxide thin-film transistors under gate-bias stress. The larger Vt shift under positive AC gate-bias stress when compared to DC operation indicates that an extra electron trapping mechanism occurs during rising/falling time during the AC pulse period. In contrast, the degradation behavior under illuminated negative gate-bias stress exhibits the opposite degradation tendency. Since electron and hole trapping are the dominant degradation mechanisms under positive and illuminated negative gate-bias stress, respectively, the different degradation tendencies under AC/DC operation can be attributed to the different trapping efficiency of electrons and holes.

  6. The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

    SciTech Connect

    Ok, Kyung-Chul; Park, Jin-Seong E-mail: jsparklime@hanyang.ac.kr; Ko Park, Sang-Hee; Kim, H. E-mail: jsparklime@hanyang.ac.kr; Hwang, Chi-Sun; Soo Shin, Hyun; Bae, Jonguk

    2014-02-10

    We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.

  7. Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

    SciTech Connect

    Kim, Jae-Sung; Xing Piao, Ming; Jang, Ho-Kyun; Kim, Gyu-Tae; Joo, Min-Kyu; Ahn, Seung-Eon; Choi, Yong-Hee

    2014-03-21

    Various plasma treatment effects such as oxygen (O{sub 2}), nitrogen (N{sub 2}), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O{sub 2} and N{sub 2} plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

  8. Performance regeneration of InGaZnO transistors with ultra-thin channels

    SciTech Connect

    Zhang, Binglei; Li, He; Zhang, Xijian E-mail: songam@sdu.edu.cn; Luo, Yi; Wang, Qingpu; Song, Aimin E-mail: songam@sdu.edu.cn

    2015-03-02

    Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period.

  9. Direct /TEM/ observation of the catalytic oxidation of amorphous carbon by Pd particles

    NASA Technical Reports Server (NTRS)

    Moorhead, R. D.; Poppa, H.; Heinemann, K.

    1980-01-01

    The catalytic oxidation of amorphous carbon substrates by Pd particles is observed by in situ transmission electron microscopy. Various modes of selective attack of the carbon substrate in the immediate neighborhood of Pd particles are observed, which can be correlated with different degrees of particle mobility. Using amorphous substrates we have been able to demonstrate that the particle-substrate interaction is influenced by the structure of the particle. This has not previously been noted.

  10. Bacterial nanometric amorphous Fe-based oxide: a potential lithium-ion battery anode material.

    PubMed

    Hashimoto, Hideki; Kobayashi, Genki; Sakuma, Ryo; Fujii, Tatsuo; Hayashi, Naoaki; Suzuki, Tomoko; Kanno, Ryoji; Takano, Mikio; Takada, Jun

    2014-04-23

    Amorphous Fe(3+)-based oxide nanoparticles produced by Leptothrix ochracea, aquatic bacteria living worldwide, show a potential as an Fe(3+)/Fe(0) conversion anode material for lithium-ion batteries. The presence of minor components, Si and P, in the original nanoparticles leads to a specific electrode architecture with Fe-based electrochemical centers embedded in a Si, P-based amorphous matrix. PMID:24689687

  11. In situ grown, self-supported iron-cobalt-nickel alloy amorphous oxide nanosheets with low overpotential toward water oxidation.

    PubMed

    Fan, Jiaqi; Chen, Zuofeng; Shi, Huijie; Zhao, Guohua

    2016-03-10

    Electrocatalytic water oxidation by in situ grown iron-cobalt-nickel ternary alloy amorphous oxides is reported. This catalytic material was prepared by simple anodization of an alloy plate followed by low-temperature annealing, which shows superior electrocatalytic activity toward oxygen evolution reaction with an overpotential of only 170 mV and a low Tafel slope. PMID:26962573

  12. Amorphous Ni-Co Binary Oxide with Hierarchical Porous Structure for Electrochemical Capacitors.

    PubMed

    Long, Chao; Zheng, Mingtao; Xiao, Yong; Lei, Bingfu; Dong, Hanwu; Zhang, Haoran; Hu, Hang; Liu, Yingliang

    2015-11-11

    A simple and outstanding approach is provided to fabricate amorphous structure Ni-Co binary oxide as supercapacitors electrode materials. We can easily obtain porous Ni-Co oxides composite materials via chemical bath deposition and subsequent calcination without any template or complicate operation procedures. The amorphous porous Ni-Co binary oxide exhibits brilliant electrochemical performance: first, the peculiar porous structure can effectively transport electrolytes and shorten the ion diffusion path; second, binary composition and amorphous character introduce more surface defects for redox reactions. It shows a high specific capacitance up to 1607 F g(-1) and can be cycled for 2000 cycles with 91% capacitance retention. In addition, the asymmetric supercapacitor delivers superior energy density of 28 W h kg(-1), and the maximum power density of 3064 W kg(-1) with a high energy density of 10 W h kg(-1). PMID:26099689

  13. Long-range structural correlations in amorphous ternary In-based oxides

    NASA Astrophysics Data System (ADS)

    Khanal, Rabi; Medvedeva, Julia

    2015-03-01

    In recent years, there is an increasing shift towards the use of oxide semiconductor materials in their amorphous form owing to several technological advantages and the fact that amorphous oxides exhibit similar or even superior properties than their crystalline counterparts. In this work we have systemically investigated the effect of chemical composition and oxygen stoichiometry on the local and long-range structure of ternary amorphous oxides, namely In-X-O with X =Sn, Zn, Ga, Cd, Ge, Sc, Y, or La, by means of ab-initio molecular dynamics. The results reveal that the local MO structure remains nearly intact upon amorphization and exhibit weak dependence on the composition. In marked contrast, the structural characteristics of the metal-metal shell, namely, the M-M distances and M-O-M angles that determine how MO polyhedra are connected into a network, are affected by the presence of X. Complex interplay between several factors such as the cation ionic size, metal-oxygen bond strength, as well as the natural preference for edge, corner, or face-sharing between the MO polyhedra, leads to a correlated behavior in the long-range structure. These findings highlight the mechanisms of the amorphous structure formation as well as the species of the carrier transport in these oxides.

  14. Unipolar resistive switching behaviors in amorphous lutetium oxide films

    NASA Astrophysics Data System (ADS)

    Gao, Xu; Xia, Yidong; Xu, Bo; Kong, Jizhou; Guo, Hongxuan; Li, Kui; Li, Haitao; Xu, Hanni; Chen, Kai; Yin, Jiang; Liu, Zhiguo

    2010-10-01

    The resistive switching properties in the amorphous Lu2O3 films deposited by pulsed laser deposition have been investigated. Well unipolar switching behaviors of Pt/Lu2O3/Pt stacks were obtained. The memory cells exhibited a high resistance ratio over 1×103, fast programming speed within 30 ns, and no obvious degradation after an endurance of 300 switching cycles and a duration of 3.2×106 s. The first-principles calculation indicates that the oxygen vacancies in cubic Lu2O3 will form defective energy level below the bottom of conduction band, and reduce the band gap. The absence of grain boundaries in the amorphous Lu2O3 films helps us attribute the switching mechanism of such stacks to the possible redistribution of defects related to oxygen vacancies along the filamentary paths during the resistive switching process.

  15. Ambient atmosphere-processable, printable Cu electrodes for flexible device applications: structural welding on a millisecond timescale of surface oxide-free Cu nanoparticles

    NASA Astrophysics Data System (ADS)

    Oh, Sang-Jin; Jo, Yejin; Lee, Eun Jung; Lee, Sun Sook; Kang, Young Hun; Jeon, Hye-Ji; Cho, Song Yun; Park, Jin-Seong; Seo, Yeong-Hui; Ryu, Beyong-Hwan; Choi, Youngmin; Jeong, Sunho

    2015-02-01

    Recently, various functional devices based on printing technologies have been of paramount interest, owing to their characteristic processing advantages along with excellent device performance. In particular, printable metallic electrodes have drawn attention in a variety of optoelectronic applications; however, research into printable metallic nanoparticles has been limited mainly to the case of an environmentally stable Ag phase. Despite its earth-abundance and highly conductive nature, the Cu phase, to date, has not been exploited as an ambient atmosphere-processable, printable material due to its critical oxidation problem in air. In this study, we demonstrate a facile route for generating highly conductive, flexible Cu electrodes in air by introducing the well-optimized photonic sintering at a time frame of 10-3 s, at which the photon energy, rather than conventional thermal energy, is instantly provided. It is elucidated here how the surface oxide-free, printed Cu particulate films undergo chemical structural/microstructural evolution depending on the instantly irradiated photon energy, and a successful demonstration is provided of large-area, flexible, printed Cu conductors on various substrates, including polyimide (PI), polyethersulfone (PES), polyethylene terephthalate (PET), and paper. The applicability of the resulting printed Cu electrodes is evaluated via implementation into both flexible capacitor devices and indium-gallium-zinc oxide (IGZO) flexible thin-film transistors.Recently, various functional devices based on printing technologies have been of paramount interest, owing to their characteristic processing advantages along with excellent device performance. In particular, printable metallic electrodes have drawn attention in a variety of optoelectronic applications; however, research into printable metallic nanoparticles has been limited mainly to the case of an environmentally stable Ag phase. Despite its earth-abundance and highly conductive nature, the Cu phase, to date, has not been exploited as an ambient atmosphere-processable, printable material due to its critical oxidation problem in air. In this study, we demonstrate a facile route for generating highly conductive, flexible Cu electrodes in air by introducing the well-optimized photonic sintering at a time frame of 10-3 s, at which the photon energy, rather than conventional thermal energy, is instantly provided. It is elucidated here how the surface oxide-free, printed Cu particulate films undergo chemical structural/microstructural evolution depending on the instantly irradiated photon energy, and a successful demonstration is provided of large-area, flexible, printed Cu conductors on various substrates, including polyimide (PI), polyethersulfone (PES), polyethylene terephthalate (PET), and paper. The applicability of the resulting printed Cu electrodes is evaluated via implementation into both flexible capacitor devices and indium-gallium-zinc oxide (IGZO) flexible thin-film transistors. Electronic supplementary information (ESI) available: X-ray diffraction results and the XPS Cu 2p3/2 spectrum for Cu nanoparticles, resistivity evolution in thermally treated Cu films, the energy dose and intensity of flash lamps used in this study, SEM images of Cu films photo-sintered at 3.0 kV for 1.5 ms, resistivity evolution in photo-sintered, drop-casted Cu films, the XPS O 1s spectrum of Cu films photo-sintered at 2.5 kV for 1.5 ms, adhesion test results for photo-sintered Cu films. See DOI: 10.1039/c4nr06816e

  16. Aqueous ultracapacitors using amorphous MnO2 and reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Mery, Adrien; Ghamouss, Fouad; Autret, Cécile; Farhat, Douaa; Tran-Van, François

    2016-02-01

    Herein, synthesis and characterization of amorphous MnO2 and application in asymmetric aqueous ultracapacitors are reported. Different amorphous manganese oxide (MnO2) materials were synthesized from the reduction of KMnO4 in different media such as ethanol (EtOH) or dimethylformamide (DMF). The electrochemical behavior of amorphous MnO2, labeled MnO2-Et and MnO2-DMF, were studied by using cyclic voltammetry, impedance spectroscopy, and galvanostatic cycling in aqueous electrolyte. XRD, BET, TEM, and SEM characterizations highlighted the amorphous nature and the nanostructuration of these MnO2 materials. BET measurement established that these amorphous MnO2 are mesoporous. In addition, MnO2-Et exhibits a larger specific surface area (168 m2 g-1), a narrower pore diameters distribution with lower diameters compared to MnO2-DMF. These results are in agreement with the electrochemical results. Indeed, MnO2-Et shows a higher specific capacitance and lower impedance in aqueous K2SO4 electrolyte. Furthermore, aqueous asymmetric ultracapacitors were assembled and studied using amorphous MnO2 as positive electrode and reduced graphene oxide (rGO) as negative electrode. These asymmetric systems exhibit an electrochemical stability for more than 20,000 galvanostatic cycles at current density of 1 A g-1 with an operating voltage of 2 V.

  17. Amorphous mixed-metal hydroxide nanostructures for advanced water oxidation catalysts.

    PubMed

    Gao, Y Q; Liu, X Y; Yang, G W

    2016-02-25

    The design of highly efficient, durable, and earth-abundant catalysts for the oxygen evolution reaction (OER) is crucial in order to promote energy conversion and storage processes. Here, we synthesize amorphous mixed-metal (Ni-Fe) hydroxide nanostructures with a homogeneous distribution of Ni/Fe as well as a tunable Ni/Fe ratio by a simple, facile, green and low-cost electrochemical technique, and we demonstrate that the synthesized amorphous nanomaterials possess ultrahigh activity and super long-term cycle stability in the OER process. The amorphous Ni0.71Fe0.29(OH)x nanostructure affords a current density of 10 mA cm(-2) at an overpotential of a mere 0.296 V and a small Tafel slope of 58 mV dec(-1), while no deactivation is detected in the CV testing even up to 30?000 cycles, which suggests the promising application of these amorphous nanomaterials in electrochemical oxidation. Meanwhile, the distinct catalytic activities among these amorphous Ni-Fe hydroxide nanostructures prompts us to take notice of the composition of the alloy hydroxides/oxides when studying their catalytic properties, which opens an avenue for the rational design and controllable preparation of such amorphous nanomaterials as advanced OER electrocatalysts. PMID:26864279

  18. Observation of the amorphous zinc oxide recrystalline process by molecular dynamics simulation.

    PubMed

    Lin, Ken-Huang; Sun, Shih-Jye; Ju, Shin-Pon; Tsai, Jen-Yu; Chen, Hsin-Tsung; Hsieh, Jin-Yuan

    2013-02-21

    The detailed structural variations of amorphous zinc oxide (ZnO) as well as wurtzite (B4) and zinc blende (B3) crystal structures during the temperature elevation process were observed by molecular dynamics simulation. The amorphous ZnO structure was first predicted through the simulated-annealing basin-hopping algorithm with the criterion to search for the least stable structure. The density and X-ray diffraction profiles of amorphous ZnO of the structure were in agreement with previous reports. The local structural transformation among different local structures and the recrystalline process of amorphous ZnO at higher temperatures are observed and can explain the structural transformation and recrystalline mechanism in a corresponding experiment [Bruncko et al., Thin Solid Films 520, 866-870 (2011)]. PMID:23509413

  19. Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

    NASA Astrophysics Data System (ADS)

    Yeh, T. C.; Zhu, Q.; Buchholz, D. B.; Martinson, A. B.; Chang, R. P. H.; Mason, T. O.

    2015-03-01

    The work functions of various amorphous and crystalline transparent conducting oxides (TCOs) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCOs, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanisms associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.

  20. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOEpatents

    Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  1. Influence of synthesis conditions on the electrochemical properties of nanostructured amorphous manganese oxide cryogels

    NASA Astrophysics Data System (ADS)

    Yang, Jingsi; Xu, Jun John

    Amorphous manganese oxides have received increasing attention in recent years as intercalation cathodes for rechargeable lithium batteries. The sol-gel method is a versatile method for achieving nanostructured amorphous oxides. In this paper, two different sol-gel routes are investigated, where nanostructured amorphous manganese oxide cryogels are obtained via freeze drying Mn(IV) oxide hydrogels formed in situ. In one route the hydrogels are formed by reaction between a solution of sodium permanganate and a solution of disodium fumarate, and in the other route by reaction between a solution of sodium permanganate and solid fumaric acid. Highly homogeneous monolithic manganese oxide hydrogels are obtained from both synthesis routes with precursor concentrations between 0.1 and 0.2 M. The freeze drying method proves to be an efficient method for obtaining nanostructured amorphous manganese oxide cryogels out of the hydrogels. Depending on the synthesis conditions of the hydrogels, the resultant cryogels can yield very high specific capacities for lithium intercalation and excellent rate performance. The cryogel with the best performance exhibits 289 mAh/g at a C/100 rate and 174 mAh/g at a 2 C rate. Strong dependence of electrochemical properties of the cryogels on the synthesis conditions of the parent hydrogels has been observed. The different electrochemical properties are believed to be due to different surface areas and local structures of the cryogels derived from hydrogels synthesized under different conditions. This strong dependence gives rise to the possibility of achieving promising intercalation materials through tailoring the surface area and the local structure of amorphous manganese oxides by adjusting sol-gel synthesis conditions.

  2. Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

    SciTech Connect

    Fltotto, D. Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-03-03

    The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al{sub 2}O{sub 3} films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively.

  3. Electrical and optical properties of sputtered amorphous vanadium oxide thin films

    SciTech Connect

    Podraza, N. J.; Gauntt, B. D.; Motyka, M. A.; Horn, M. W.; Dickey, E. C.

    2012-04-01

    Amorphous vanadium oxide (VO{sub x}) is a component found in composite nanocrystalline VO{sub x} thin films. These types of composite films are used as thermistors in pulsed biased uncooled infrared imaging devices when containing face centered cubic vanadium monoxide phase crystallites, and substantial fractions of amorphous material in the composite are necessary to optimize device electrical properties. Similarly, optoelectronic devices exploiting the metal-to-semiconductor transition contain the room-temperature monoclinic or high-temperature (>68 deg. C) rutile vanadium dioxide phase. Thin films of VO{sub x} exhibiting the metal-to-semiconductor transition are typically polycrystalline or nanocrystalline, implying that significant amounts of disordered, amorphous material is present at grain boundaries or surrounding the crystallites and can impact the overall optical or electronic properties of the film. The performance of thin film material for either application depends on both the nature of the crystalline and amorphous components, and in this work we seek to isolate and study amorphous VO{sub x}. VO{sub x} thin films were deposited by pulsed dc reactive magnetron sputtering to produce amorphous materials with oxygen contents {>=}2, which were characterized electrically by temperature dependent current-voltage measurements and optically characterized by spectroscopic ellipsometry. Film resistivity, thermal activation energy, and complex dielectric function spectra from 0.75 to 6.0 eV were used to identify the impact of microstructural variations including composition and density.

  4. Photo-oxidation of polymer-like amorphous hydrogenated carbon under visible light illumination

    SciTech Connect

    Baxamusa, Salmaan; Laurence, Ted; Worthington, Matthew; Ehrmann, Paul

    2015-11-10

    Amorphous hydrogenated carbon (a-C:H), a polymer-like network typically synthesized by plasma chemical vapor deposition, has long been understood to exhibit optical absorption of visible light (? > 400 nm). In this report we explain that this absorption is accompanied by rapid photo-oxidation (within minutes) that behaves in most respects like classic polymer photo-oxidation with the exception that it occurs under visible light illumination rather than ultraviolet illumination.

  5. Photo-oxidation of polymer-like amorphous hydrogenated carbon under visible light illumination

    DOE PAGESBeta

    Baxamusa, Salmaan; Laurence, Ted; Worthington, Matthew; Ehrmann, Paul

    2015-11-10

    Amorphous hydrogenated carbon (a-C:H), a polymer-like network typically synthesized by plasma chemical vapor deposition, has long been understood to exhibit optical absorption of visible light (λ > 400 nm). In this report we explain that this absorption is accompanied by rapid photo-oxidation (within minutes) that behaves in most respects like classic polymer photo-oxidation with the exception that it occurs under visible light illumination rather than ultraviolet illumination.

  6. An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process

    NASA Astrophysics Data System (ADS)

    Nagase, Takeshi; Yamashita, Ryo; Yabuuchi, Atsushi; Lee, Jung-Goo

    2015-11-01

    A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiOx) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.

  7. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Kim, Junghwan; Miyokawa, Norihiko; Ide, Keisuke; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-01

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  8. Intrinsic nature of visible-light absorption in amorphous semiconducting oxides

    NASA Astrophysics Data System (ADS)

    Kang, Youngho; Song, Hochul; Nahm, Ho-Hyun; Jeon, Sang Ho; Cho, Youngmi; Han, Seungwu

    2014-03-01

    To enlighten microscopic origin of visible-light absorption in transparent amorphous semiconducting oxides, the intrinsic optical property of amorphous InGaZnO4 is investigated by considering dipole transitions within the quasiparticle band structure. In comparison with the crystalline InGaZnO4 with the optical gap of 3.6 eV, the amorphous InGaZnO4 has two distinct features developed in the band structure that contribute to significant visible-light absorption. First, the conduction bands are down-shifted by 0.55 eV mainly due to the undercoordinated In atoms, reducing the optical gap between extended states to 2.8 eV. Second, tail states formed by localized oxygen p orbitals are distributed over 0.5 eV near the valence edge, which give rise to substantial subgap absorption. The fundamental understanding on the optical property of amorphous semiconducting oxides based on underlying electronic structure will pave the way for resolving instability issues in recent display devices incorporating the semiconducting oxides.

  9. Oxidative Damage and Energy Metabolism Disorder Contribute to the Hemolytic Effect of Amorphous Silica Nanoparticles

    NASA Astrophysics Data System (ADS)

    Jiang, Lizhen; Yu, Yongbo; Li, Yang; Yu, Yang; Duan, Junchao; Zou, Yang; Li, Qiuling; Sun, Zhiwei

    2016-02-01

    Amorphous silica nanoparticles (SiNPs) have been extensively used in biomedical applications due to their particular characteristics. The increased environmental and iatrogenic exposure of SiNPs gained great concerns on the biocompatibility and hematotoxicity of SiNPs. However, the studies on the hemolytic effects of amorphous SiNPs in human erythrocytes are still limited. In this study, amorphous SiNPs with 58 nm were selected and incubated with human erythrocytes for different times (30 min and 2 h) at various concentrations (0, 10, 20, 50, and 100 μg/mL). SiNPs induced a dose-dependent increase in percent hemolysis and significantly increased the malondialdehyde (MDA) content and decreased the superoxide dismutase (SOD) activity, leading to oxidative damage in erythrocytes. Hydroxyl radical (·OH) levels were detected by electron spin resonance (ESR), and the decreased elimination rates of ·OH showed SiNPs induced low antioxidant ability in human erythrocytes. Na+-K+ ATPase activity and Ca2+-Mg2+ ATPase activity were found remarkably inhibited after SiNP treatment, possibly causing energy sufficient in erythrocytes. Percent hemolysis of SiNPs was significantly decreased in the presence of N-acetyl-cysteine (NAC) and adenosine diphosphate (ADP). It was concluded that amorphous SiNPs caused dose-dependent hemolytic effects in human erythrocytes. Oxidative damage and energy metabolism disorder contributed to the hemolytic effects of SiNPs in vitro.

  10. Oxidative Damage and Energy Metabolism Disorder Contribute to the Hemolytic Effect of Amorphous Silica Nanoparticles.

    PubMed

    Jiang, Lizhen; Yu, Yongbo; Li, Yang; Yu, Yang; Duan, Junchao; Zou, Yang; Li, Qiuling; Sun, Zhiwei

    2016-12-01

    Amorphous silica nanoparticles (SiNPs) have been extensively used in biomedical applications due to their particular characteristics. The increased environmental and iatrogenic exposure of SiNPs gained great concerns on the biocompatibility and hematotoxicity of SiNPs. However, the studies on the hemolytic effects of amorphous SiNPs in human erythrocytes are still limited. In this study, amorphous SiNPs with 58 nm were selected and incubated with human erythrocytes for different times (30 min and 2 h) at various concentrations (0, 10, 20, 50, and 100 μg/mL). SiNPs induced a dose-dependent increase in percent hemolysis and significantly increased the malondialdehyde (MDA) content and decreased the superoxide dismutase (SOD) activity, leading to oxidative damage in erythrocytes. Hydroxyl radical (·OH) levels were detected by electron spin resonance (ESR), and the decreased elimination rates of ·OH showed SiNPs induced low antioxidant ability in human erythrocytes. Na(+)-K(+) ATPase activity and Ca(2+)-Mg(2+) ATPase activity were found remarkably inhibited after SiNP treatment, possibly causing energy sufficient in erythrocytes. Percent hemolysis of SiNPs was significantly decreased in the presence of N-acetyl-cysteine (NAC) and adenosine diphosphate (ADP). It was concluded that amorphous SiNPs caused dose-dependent hemolytic effects in human erythrocytes. Oxidative damage and energy metabolism disorder contributed to the hemolytic effects of SiNPs in vitro. PMID:26831695

  11. Model for determination of mid-gap states in amorphous metal oxides from thin film transistors

    NASA Astrophysics Data System (ADS)

    Bubel, S.; Chabinyc, M. L.

    2013-06-01

    The electronic density of states in metal oxide semiconductors like amorphous zinc oxide (a-ZnO) and its ternary and quaternary oxide alloys with indium, gallium, tin, or aluminum are different from amorphous silicon, or disordered materials such as pentacene, or P3HT. Many ZnO based semiconductors exhibit a steep decaying density of acceptor tail states (trap DOS) and a Fermi level (EF) close to the conduction band energy (EC). Considering thin film transistor (TFT) operation in accumulation mode, the quasi Fermi level for electrons (Eq) moves even closer to EC. Classic analytic TFT simulations use the simplification EC-EF> `several'kT and cannot reproduce exponential tail states with a characteristic energy smaller than 1/2 kT. We demonstrate an analytic model for tail and deep acceptor states, valid for all amorphous metal oxides and include the effect of trap assisted hopping instead of simpler percolation or mobility edge models, to account for the observed field dependent mobility.

  12. Amorphous CoSn alloys decorated by Pt as high efficiency electrocatalysts for ethanol oxidation

    NASA Astrophysics Data System (ADS)

    Wang, Hui; Zhang, Xiangtai; Wang, Rongfang; Ji, Shan; Wang, Wei; Wang, Qizhao; Lei, Ziqiang

    2011-10-01

    This study examines the electro-catalytic behaviour of Pt decorating amorphous alloys in the electro-oxidation of ethanol. Pt decorated CoSn nanoparticles on carbon (denoted as Pt-CoSn/C) are prepared using a two-stage chemical synthesis (sol-gel preparation and Steady-state replacement method). The structure of Pt-CoSn/C nanoparticles is confirmed by the transmission electron microscopy (TEM) and X-ray diffraction (XRD). Under the same quantity of platinum, the Pt-CoSn/C nanoparticles have higher activity in alcohol oxidation than the Pt/C, PtRu/C and PtSn/C nanoparticles in cyclic voltammetry tests. The structure of Pt decorating amorphous CoSn alloys notably decreases the usage of Pt and enhances its catalytic activity at the same time.

  13. Amorphous Mn oxide-ordered mesoporous carbon hybrids as a high performance electrode material for supercapacitors.

    PubMed

    Nam, Inho; Kim, Nam Dong; Kim, Gil-Pyo; Park, Junsu; Yi, Jongheop

    2012-07-01

    A supercapacitor has the advantages of both the conventional capacitors and the rechargeable batteries. Mn oxide is generally recognized one of the potential materials that can be used for a supercapacitor, but its low conductivity is a limiting factor for electrode materials. In this study, a hybrid of amorphous Mn oxide (AMO) and ordered mesoporous carbon (OMC) was prepared and characterized using X-ray diffraction, transmission electron microscopy, N2/77 K sorption techniques, and electrochemical analyses. The findings indicate that the electrochemical activities of Mn oxide were facilitated when it was in the hybrid state because OMC acted as a pathway for both the electrolyte ions and the electrons due to the characteristics of the ordered mesoporous structure. The ordered mesoporous structure of OMC was well maintained even after hybridization with amorphous Mn oxide. The electrochemical-activity tests revealed that the AMO/OMC hybrid had a higher specific capacitance and conductivity than pure Mn oxide. In the case where the Mn/C weight ratio was 0.75, the composite showed a high capacitance of 153 F/g, which was much higher than that for pure Mn oxide, due to the structural effects of OMC. PMID:22966638

  14. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    NASA Astrophysics Data System (ADS)

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, B.; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5??104?S/m) and Hall mobility (>30?cm2/V-s). These films had an amorphous microstructure which was stable to at least 500?C and large optical transparency with a direct band gap of 2.85??0.14?eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

  15. Analysis of high quality superconducting resonators: consequences for TLS properties in amorphous oxides

    NASA Astrophysics Data System (ADS)

    Burnett, J.; Faoro, L.; Lindström, T.

    2016-04-01

    1/f noise caused by microscopic two-level systems (TLS) is known to be very detrimental to the performance of superconducting quantum devices but the nature of these TLS is still poorly understood. Recent experiments with superconducting resonators indicates that interaction between TLS in the oxide at the film-substrate interface is not negligible. Here we present data on the loss and 1/f frequency noise from two different Nb resonators with and without Pt capping and discuss what conclusions can be drawn regarding the properties of TLS in amorphous oxides. We also estimate the concentration and dipole moment of the TLS.

  16. Mechanisms of lithium transport in amorphous polyethylene oxide.

    PubMed

    Duan, Yuhua; Halley, J W; Curtiss, Larry; Redfern, Paul

    2005-02-01

    We report calculations using a previously reported model of lithium perchlorate in polyethylene oxide in order to understand the mechanism of lithium transport in these systems. Using an algorithm suggested by Voter, we find results for the diffusion rate which are quite close to experimental values. By analysis of the individual events in which large lithium motions occur during short times, we find that no single type of rearrangement of the lithium environment characterizes these events. We estimate the free energies of the lithium ion as a function of position during these events by calculation of potentials of mean force and thus derive an approximate map of the free energy as a function of lithium position during these events. The results are consistent with a Marcus-like picture in which the system slowly climbs a free energy barrier dominated by rearrangement of the polymer around the lithium ions, after which the lithium moves very quickly to a new position. Reducing the torsion forces in the model causes the diffusion rates to increase. PMID:15740341

  17. Oxidative and tribological properties of amorphous and quasicrystalline approximant Al-Cu-Fe thin films.

    PubMed

    Rampulla, D M; Mancinelli, C M; Brunell, I F; Gellman, A J

    2005-05-10

    The origins of the tribological properties and corrosion resistance of amorphous and quasicrystalline approximant alloys have been studied by comparing their properties in thin Al-Cu-Fe alloy films with compositions lying near the quasicrystalline region of the ternary compositional phase diagram. Six sputtered thin films of an Al-Cu-Fe alloy were studied using X-ray diffraction, X-ray photoemission spectroscopy (XPS), and an in situ ultrahigh vacuum (UHV) tribometer. The films were annealed in UHV to induce the formation of orthorhombic, rhombohedral, and amorphous bulk structures. The properties of these thin films were then determined in the same UHV apparatus without exposing the films to air. The rates of surface oxidation by H2O and O2 were measured using XPS. Although the oxidation rates and oxide thicknesses were dependent on the oxidant, they were not sensitive to the structures of the films. Friction was measured between identical samples in sliding contact. The friction coefficients (micros = 0.36 +/- 0.11 to 0.56 +/- 0.08) were comparable to those observed in other experiments using quasicrystals and approximants in UHV; however, there was no strong correlation between the friction coefficients and either the film structure or the degree of surface oxidation. These results suggest that the tribological and corrosion resistance properties of these quasicrystalline approximant alloys are not directly connected to crystalline structure. PMID:16032871

  18. Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

    SciTech Connect

    Canulescu, S. Schou, J.; Rechendorff, K.; Pleth Nielsen, L.; Borca, C. N.; Jones, N. C.; Hoffmann, S. V.; Bordo, K.; Ambat, R.

    2014-03-24

    The band structure of pure and Ti-alloyed anodic aluminum oxide has been examined as a function of Ti concentration varying from 2 to 20 at. %. The band gap energy of Ti-alloyed anodic Al oxide decreases with increasing Ti concentration. X-ray absorption spectroscopy reveals that Ti atoms are not located in a TiO{sub 2} unit in the oxide layer, but rather in a mixed Ti-Al oxide layer. The optical band gap energy of the anodic oxide layers was determined by vacuum ultraviolet spectroscopy in the energy range from 4.1 to 9.2 eV (300–135 nm). The results indicate that amorphous anodic Al{sub 2}O{sub 3} has a direct band gap of 7.3 eV, which is about ∼1.4 eV lower than its crystalline counterpart (single-crystal Al{sub 2}O{sub 3}). Upon Ti-alloying, extra bands appear within the band gap of amorphous Al{sub 2}O{sub 3}, mainly caused by Ti 3d orbitals localized at the Ti site.

  19. Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

    PubMed Central

    Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

    2013-01-01

    This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

  20. Inverted polymer solar cells with amorphous indium zinc oxide as the electron-collecting electrode

    SciTech Connect

    Cheun, Hyeunseok; Kim, Jungbae; Zhou, Yinhua; Fang, Yunnan; Dindar, Amir; Shim, Jae Won; Fuentes-Hernandez, Canek; Sandhage, Kenneth H.; Kippelen, Bernard

    2010-09-17

    We report on the fabrication and performance of polymer-based inverted solar cells utilizing amorphous indium zinc oxide (a-IZO) as the electron-collecting electrode. Amorphous IZO films of 200 nm thickness were deposited by room temperature sputtering in a high-purity argon atmosphere. The films possessed a high optical transmittance in the visible region (≥ 80%), a low resistivity (3.3 × 10-4 Ωcm), a low surface roughness (root mean square = 0.68 nm), and a low work function (4.46 ± 0.02 eV). Inverted solar cells with the structure a-IZO/P3HT: PCBM/PEDOT:PSS/Ag exhibited a power conversion efficiency of 3% estimated for AM 1.5G, 100 mW/cm2 illumination.

  1. Preparation and anti-oxidation characteristics of ZrSiO4-SiBCN(O) amorphous coating

    NASA Astrophysics Data System (ADS)

    Tang, Baojun; Feng, Zelong; Hu, Shujuan; Zhang, Yue

    2015-03-01

    In this paper, a dense and seamless SiBCN(O) amorphous coating with a few ZrSiO4 particles is prepared by low-cost slurry method and sintered at 1573 K, namely ZrSiO4-SiBCN(O) amorphous coating. During its preparation process, by employing the polyborosilazane (PBSZ)-ethanol solution as the precursor, the sintering temperature of the coating is significantly reduced and its densification is greatly improved as well. The coating was heat-treated in stagnant laboratory air at 1773 K from 5 min to 8 h. It shows high oxidation protecting performance during oxidation and the oxidation mechanism includes three stages, that are active oxidation, defection healing and oxygen diffusion at 1773 K. It was also found that, by introducing the ZrSiO4 particles into the SiBCN(O) amorphous coating, the propagation of micro-cracks during its oxidation process is prominently inhibited.

  2. Stoichiometry determined exchange interactions in amorphous ternary transition metal oxides: Theory and experiment

    SciTech Connect

    Hu, Shu-jun; Yan, Shi-shen Zhang, Yun-peng; Zhao, Ming-wen; Kang, Shi-shou; Mei, Liang-mo

    2014-07-28

    Amorphous transition metal oxides exhibit exotic transport and magnetic properties, while the absence of periodic structure has long been a major obstacle for the understanding of their electronic structure and exchange interaction. In this paper, we have formulated a theoretical approach, which combines the melt-quench approach and the spin dynamic Monte-Carlo simulations, and based on it, we explored amorphous Co{sub 0.5}Zn{sub 0.5}O{sub 1−y} ternary transition metal oxides. Our theoretical results reveal that the microstructure, the magnetic properties, and the exchange interactions of Co{sub 0.5}Zn{sub 0.5}O{sub 1−y} are strongly determined by the oxygen stoichiometry. In the oxygen-deficient sample (y > 0), we have observed the long-range ferromagnetic spin ordering which is associated with the non-stoichiometric cobalt-rich region rather than metallic clusters. On the other hand, the microstructure of stoichiometric sample takes the form of continuous random networks, and no long-range ferromagnetism has been observed in it. Magnetization characterization of experimental synthesized Co{sub 0.61}Zn{sub 0.39}O{sub 1−y} films verifies the relation between the spin ordering and the oxygen stoichiometry. Furthermore, the temperature dependence of electrical transport shows a typical feature of semiconductors, in agreement with our theoretical results.

  3. All solution-processed amorphous oxide thin-film transistors using UV/O3 treatment

    NASA Astrophysics Data System (ADS)

    Umeda, Kenichi; Miyasako, Takaaki; Sugiyama, Ayumu; Tanaka, Atsushi; Suzuki, Masayuki; Tokumitsu, Eisuke; Shimoda, Tatsuya

    2014-02-01

    In the fabrication of amorphous oxide thin-film transistors (TFTs) by all-solution process, an ultraviolet-ozone (UV/O3) treatment and solution materials were adopted. By applying the UV/O3 treatment for solution-processed In2-xGaxZnO4 channel layers, enhancement of TFT characteristics was achieved. In particular, the most appropriate metal composition for the In2-xGaxZnO4 system with UV/O3 treatment was found to be x = 1.0. In addition to the channel layers, solution-processed LaNiO3, Bi-Nb-O/La-Ta-O stacked layer, and ITO films were formed as the gate electrode, gate insulator, and source and drain electrodes, respectively, for TFT fabrication. Using UV/O3 treatment and solution materials, all-solution-processed amorphous oxide TFTs were successfully fabricated, and superior TFT properties, including an on-off current ratio of 107, a threshold voltage of 1.6 V, a subthreshold swing of 200 mV/decade, and a field-effect mobility of 0.49 cm2 V-1 s-1, were achieved.

  4. Optimizing amorphous indium zinc oxide film growth for low residual stress and high electrical conductivity

    NASA Astrophysics Data System (ADS)

    Kumar, Mukesh; Sigdel, A. K.; Gennett, T.; Berry, J. J.; Perkins, J. D.; Ginley, D. S.; Packard, C. E.

    2013-10-01

    With recent advances in flexible electronics, there is a growing need for transparent conductors with optimum conductivity tailored to the application and nearly zero residual stress to ensure mechanical reliability. Within amorphous transparent conducting oxide (TCO) systems, a variety of sputter growth parameters have been shown to separately impact film stress and optoelectronic properties due to the complex nature of the deposition process. We apply a statistical design of experiments (DOE) approach to identify growth parameter-material property relationships in amorphous indium zinc oxide (a-IZO) thin films and observed large, compressive residual stresses in films grown under conditions typically used for the deposition of highly conductive samples. Power, growth pressure, oxygen partial pressure, and RF power ratio (RF/(RF + DC)) were varied according to a full-factorial test matrix and each film was characterized. The resulting regression model and analysis of variance (ANOVA) revealed significant contributions to the residual stress from individual growth parameters as well as interactions of different growth parameters, but no conditions were found within the initial growth space that simultaneously produced low residual stress and high electrical conductivity. Extrapolation of the model results to lower oxygen partial pressures, combined with prior knowledge of conductivity-growth parameter relationships in the IZO system, allowed the selection of two promising growth conditions that were both empirically verified to achieve nearly zero residual stress and electrical conductivities >1480 S/cm. This work shows that a-IZO can be simultaneously optimized for high conductivity and low residual stress.

  5. Dissolution of amorphous Ti-Zr-Si alloy during anodic oxidation with formation of barrier films

    SciTech Connect

    Isaev, N.I.; Yakovlev, V.B.; Iovdal'skii, A.A.; Gorshkov, T.P.

    1988-07-01

    Radiometric analysis of a solution has been used to study kinetic mechanisms for dissolution of amorphous alloy components in acid aqueous solutions with anodic oxidation in different regimes. In a galvanostatic regime for alloy and crystalline Ti, Zr, and Ta two sections are detected: an initial section of accelerated dissolution and a steady section. An increase in dissolution of zirconium from the alloy has been revealed compared with pure crystalline zirconium. Potentiostatic oxidation is accompanied by a slowdown in dissolution similar to a change in current. Current yield has been analyzed for dissolution of the main elements and nonrectifying impurities of the alloy (for example copper). Gamma spectroscopy using the gamma radiation from neutron-activated isotopes of the components and impurities was performed.

  6. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    SciTech Connect

    Morales-Masis, M. Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50?C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  7. Amorphous Vanadium Oxide/Carbon Composite Positive Electrode for Rechargeable Aluminum Battery.

    PubMed

    Chiku, Masanobu; Takeda, Hiroki; Matsumura, Shota; Higuchi, Eiji; Inoue, Hiroshi

    2015-11-11

    Amorphous vanadium oxide/carbon composite (V2O5/C) was first applied to the positive electrode active material for rechargeable aluminum batteries. Electrochemical properties of V2O5/C were investigated by cyclic voltammetry and charge-discharge tests. Reversible reduction/oxidation peaks were observed for the V2O5/C electrode and the rechargeable aluminum cell showed the maximum discharge capacity over 200 mAh g(-1) in the first discharging. The XPS analyses after discharging and the following charging exhibited that the redox of vanadium ion in the V2O5/C active material occurred during discharging and charging, and the average valence of V changed between 4.14 and 4.85. PMID:26489385

  8. Crystalline to amorphous phase transition of tin oxide nanocrystals induced by SHI at low temperature

    SciTech Connect

    Kumar, Vijay; Pratap, Deepti; Jain, Anshul; Agarwal, D. C.; Sulania, I.; Tripathi, A.; Chaudhary, R. J.; Chauhan, R. S.

    2012-06-05

    Tin oxide (SnO{sub 2}) thin films were deposited using pulsed laser deposition (PLD) technique on Si substrates. The as-deposited films were irradiated using 100 MeV Ag ions at different fluences ranging from 3x10{sup 13} to 3x10{sup 14} ions/cm{sup 2} at an incidence angle of 75 deg. with respect to surface normal at liquid nitrogen (LN2) temperature. The as-deposited and irradiated films have been characterized using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques to study the modifications in structural and surface morphological properties. Nanocrystalline film become completely amorphous and nanograins of tin oxide disappeared from the surface as indicated by XRD spectra and AFM micrographs respectively.

  9. Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

    NASA Astrophysics Data System (ADS)

    Goldfarb, I.; Miao, F.; Yang, J. Joshua; Yi, W.; Strachan, J. P.; Zhang, M.-X.; Pickett, M. D.; Medeiros-Ribeiro, G.; Williams, R. Stanley

    2012-04-01

    We characterized the conduction mechanisms in thin sputtered films of three representative binary Me-O (Me=Ta, W, and Nb) systems as a function of oxygen content, by combining in situ chemical state and electronic band structure studies from X-ray photoemission with temperature-dependent transport measurements. Despite certain differences, these amorphous films all displayed Fermi glass behavior following an oxidation-induced transition from metallic to hopping conduction, down to a sub-percolation threshold. The electron localization estimated from the band structure was in good agreement with that from the transport measurements, and the two were used to construct phase diagrams of conduction in the degree of oxidation-conductivity coordinates, which should prove important in the design of resistive switching and other electronic devices.

  10. Arsenic availability in rice from a mining area: is amorphous iron oxide-bound arsenic a source or sink?

    PubMed

    Liu, Chuanping; Yu, Huan-Yun; Liu, Chengshuai; Li, Fangbai; Xu, Xianghua; Wang, Qi

    2015-04-01

    The effect of iron (Fe) redox cycling on the mobility and bioavailability of arsenic (As) in paddy soils has attracted increasing concerns, especially in Asia, where the paddy soil is characteristic of Fe with high abundance and activity. However, whether amorphous Fe oxide-bound As acts as a source or a sink of As in natural field conditions needs to be clarified further. In this study, 73 pairs of soil and rice were collected from paddy fields contaminated by As-containing acid mining drainage. The most significant correlations between the iron fractions and As fractions suggest that Fe redox cycling can directly affect As fractionation in soils, which can then indirectly affect As bioavailability. Significantly negative correlations between amorphous Fe oxide-bound As in soil and As in rice grain were found, indicating that amorphous Fe oxide-bound As acts a sink of As. PMID:25638690

  11. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility.

    PubMed

    Malasi, A; Taz, H; Farah, A; Patel, M; Lawrie, B; Pooser, R; Baddorf, A; Duscher, G; Kalyanaraman, R

    2015-01-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5??10(4)?S/m) and Hall mobility (>30?cm(2)/V-s). These films had an amorphous microstructure which was stable to at least 500?C and large optical transparency with a direct band gap of 2.85??0.14?eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned. PMID:26670421

  12. High-temperature oxidation of a rapidly solidified amorphous Ta-Ir alloy

    NASA Technical Reports Server (NTRS)

    Cotell, Catherine M.; Yurek, Gregory J.

    1986-01-01

    The oxidation products formed at 500 and 700 C on an amorphous Ta-44.5 at. pct Ir alloy in an Ar-0.1 percent O2 gas mixture were characterized using SEM, XRD, EPMA, TEM, STEM, AES, and XPS. Initially, a thin (3-4 nm) layer of Ta2O5 formed at the surface of the alloy. Continued growth of the Ta2O5, which occurred very rapidly, involved diffusion of oxygen anions from the Ta2O5/gas interface to the alloy/Ta2O5 interface, where tantalum was selectively oxidized. Because the oxide grew more quickly than iridium could diffuse back into the alloy, the iridium coalesced into platelets of crystalline iridium-rich alloy that were oriented approximately parallel to the oxide/alloy interface, and which became embedded in a matrix of Ta2O5. The unoxidized core remained in the glassy state. The oxidation process and/or the dissolution of oxygen into the unoxidized alloy caused the alloy to become embrittled.

  13. Thermal Transport in Graphene Oxide From Ballistic Extreme to Amorphous Limit

    PubMed Central

    Mu, Xin; Wu, Xufei; Zhang, Teng; Go, David B.; Luo, Tengfei

    2014-01-01

    Graphene oxide is being used in energy, optical, electronic and sensor devices due to its unique properties. However, unlike its counterpart graphene the thermal transport properties of graphene oxide remain unknown. In this work, we use large-scale molecular dynamics simulations with reactive potentials to systematically study the role of oxygen adatoms on the thermal transport in graphene oxide. For pristine graphene, highly ballistic thermal transport is observed. As the oxygen coverage increases, the thermal conductivity is significantly reduced. An oxygen coverage of 5% can reduce the graphene thermal conductivity by ~90% and a coverage of 20% lower it to ~8.8?W/mK. This value is even lower than the calculated amorphous limit (~11.6?W/mK for graphene), which is usually regarded as the minimal possible thermal conductivity of a solid. Analyses show that the large reduction in thermal conductivity is due to the significantly enhanced phonon scattering induced by the oxygen defects which introduce dramatic structural deformations. These results provide important insight to the thermal transport physics in graphene oxide and offer valuable information for the design of graphene oxide-based materials and devices. PMID:24468660

  14. Ni-B amorphous alloy nanoparticles modified nanoporous Cu toward ethanol oxidation in alkaline medium

    NASA Astrophysics Data System (ADS)

    Zhang, Shu-Jin; Zheng, Yi-Xiong; Yuan, Lin-Shan; Zhao, Li-Hua

    2014-02-01

    Nanoporous Cu (NPC) prepared by dealloying CuZn alloy is used as an economic substrate for the fabrication of Ni-B alloy (Ni-B/NPC) by ultrasonic-assisted electroless technique. The results of scanning electron microscopy (SEM) and X-ray diffraction (XRD) demonstrate the NPC has a bicontinuous network structure and the Ni-B/NPC alloy is amorphous structure with highly dispersed nanoparticles. Electrochemical performances are measured by cyclic voltammetry (CV), chronoamperometry (CA) and linear sweep voltammetry (LSV). The results suggest that the Ni-B/NPC electrode prepared for 5 min shows the highest electrochemical activity and its redox species coverage and proton diffusion coefficient are remarkably improved compared with the bulk Ni. Ethanol oxidation at the Ni-B/NPC electrode suggests the onset oxidation potential has a negative shift of 52 mV and the oxidation peak current increases by 19.4 times, and apparent activation energy decreases 4.75-30.60 kJ mol-1 at the same potential, in comparison with the bulk Ni. Additionally, the reaction rate constant for ethanol oxidation at the Ni-B/NPC electrode is improved by about one order of magnitude relative to the reported value. Finally, the Ni-B/NPC electrode has a stable redox behavior after complete activation and superior catalytic stability for ethanol oxidation.

  15. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    PubMed Central

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, B.; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-01-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned. PMID:26670421

  16. Thermodynamic stability of intergranular amorphous films in bismuth-doped zinc oxide

    SciTech Connect

    Wang, H.; Chiang, Y.M.

    1998-01-01

    It is shown that the solid-state equilibrium configuration of Bi-doped ZnO grain boundaries is a nanometer-thick amorphous film. Polycrystalline Bi-doped ZnO was investigated using high-resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM). The equilibrium state below the eutectic temperature and at 1 atm total pressure was approached from three different routes: samples were cooled from above the eutectic temperature (T{sub eutectic} = 740 C), processed entirely below the eutectic temperature, and desegregated by high applied pressure (1 GPa) followed by annealing at ambient pressure to restore segregation. In all instances, the final state is an amorphous intergranular film 1.0--1.5 nm in thickness. The results show that a thin intergranular film in this system has lower free energy than the crystal-crystal grain boundary. The implications of these results for creation of electrically active grain boundaries in zinc oxide varistors are discussed.

  17. Polyimides cured in the presence of glass, boron (amorphous or oxides) or aluminium oxides

    SciTech Connect

    Kaminski, S.S.; Leone-Bay, A.

    1992-06-16

    This patent describes a polyimide resin comprising a particulate solid selected from the group consisting of glass, boron, boron oxide, aluminum oxide and mixtures thereof and the reaction production of a dianhydride (or its diester or tetracid derivative) having at least one aromatic ring in the molecule and a bis(tri-fluoromethyl) oxydianiline.

  18. Reaction of Formic Acid over Amorphous Manganese Oxide Catalytic Systems: An In Situ Study

    SciTech Connect

    J Durand; S Senanayake; S Suib; D Mullins

    2011-12-31

    The interaction of formic acid with amorphous manganese oxide (AMO) is investigated using in situ photoelectron and infrared spectroscopy techniques. Soft X-ray photoelectron spectroscopy (sXPS) and in situ FTIR illustrate two possible modes of formate bound species at the AMO surface. Two peaks in the IR region from 1340-1390 cm{sup -1} are indicative of formate species bound to the surface in a bidentate configuration. However, a 224 cm{sup -1} band gap between v{sub s}OCO and v{sub as}OCO suggests formate is bound in a bridging configuration. Temperature-programmed desorption studies confirm the formate bound species desorbs as carbon dioxide from the surface at multiple binding sites. At temperatures above 700 K, the presence of K{sup +} {hor_ellipsis} OC complex suggests the bound species interacts at vacant sites related to framework oxygen and cation mobility.

  19. Reaction of Formic Acid over Amorphous Manganese Oxide Catalytic Systems: An In Situ Study

    SciTech Connect

    Durand, Jason; Senanayake, Sanjaya D; Mullins, David R; Suib, Steven

    2010-01-01

    The interaction of formic acid with amorphous manganese oxide (AMO) is investigated using in situ photoelectron and infrared spectroscopy techniques. Soft X-ray photoelectron spectroscopy (sXPS) and in situ FTIR illustrate two possible modes of formate bound species at the AMO surface. Two peaks in the IR region from 1340-1390 cm{sup -1} are indicative of formate species bound to the surface in a bidentate configuration. However, a 224 cm{sup -1} band gap between v{sub s}OCO and v{sub as}OCO suggests formate is bound in a bridging configuration. Temperature-programmed desorption studies confirm the formate bound species desorbs as carbon dioxide from the surface at multiple binding sites. At temperatures above 700 K, the presence of K{sup +} {hor_ellipsis} OC complex suggests the bound species interacts at vacant sites related to framework oxygen and cation mobility.

  20. A novel composite material based on antimony(III) oxide and amorphous silica

    SciTech Connect

    Zemnukhova, Ludmila A.; Panasenko, Alexander E.

    2013-05-01

    The composite material nSb₂O₃·mSiO₂·xH₂O was prepared by hydrolysis of SbCl₃ and Na₂SiO₃ in an aqueous medium. It has been shown that the composition of the material is influenced by the ratio of the initial components and the acidity of the reaction medium. The morphology of the material particles and its specific surface area have been determined. The thermal and optic properties were also investigated. - Graphical abstract: Novel composite material containing amorphous silica and crystal antimony(III) oxide has been synthesized by hydrolysis of SbCl₃ and Na₂SiO₃ in an aqueous medium. Highlights: • The composite material nSb₂O₃·mSiO₂·xH₂O was prepared in an aqueous medium. • The composition of the material is controllable by a synthesis conditions. • The morphology of the material and its optic properties have been determined.

  1. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    SciTech Connect

    Xu, Rui; He, Jian; Song, Yang; Li, Wei; Zaslavsky, A.; Paine, D. C.

    2014-09-01

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ∼10{sup −2 }Ω cm{sup 2}, ∼3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ∼27 cm{sup 2}/V s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  2. Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

    SciTech Connect

    Seo, Hyungtak; Cho, Young-Je; Bobade, Santosh M.; Park, Kyoung-Youn; Choi, Duck-Kyun; Kim, Jinwoo; Lee, Jaegab

    2010-05-31

    We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to approx10{sup 18} cm{sup -3} from the background level of 10{sup 16} cm{sup -3}, as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at approx10{sup 8} and field-effect mobility at 22.7 cm{sup 2}/V s.

  3. Stoichiometric analysis of compositionally graded combinatorial amorphous thin film oxides using laser-induced breakdown spectroscopy.

    PubMed

    Widjonarko, N Edwin; Perkins, John D; Leisch, Jennifer E; Parilla, Philip A; Curtis, Calvin J; Ginley, David S; Berry, Joseph J

    2010-07-01

    Laser-induced breakdown spectroscopy (LIBS) is a recently developed locally destructive elemental analysis technique that can be used to analyze solid, liquid, and gaseous samples. In the system explored here, a neodymium-doped yttrium aluminum garnet laser ablates a small amount of the sample and spectral emission from the plume is analyzed using a set of synchronized spectrometers. We explore the use of LIBS to map the stoichiometry of compositionally graded amorphous indium zinc oxide thin-film libraries. After optimization of the experimental parameters (distance between lens and samples, spot size on the samples, etc.), the LIBS system was calibrated against inductively coupled plasma atomic emission spectroscopy which resulted in a very consistent LIBS-based elemental analysis. Various parameters that need to be watched closely in order to produce consistent results are discussed. We also compare LIBS and x-ray fluorescence as techniques for the compositional mapping of libraries. PMID:20687701

  4. Stoichiometric analysis of compositionally graded combinatorial amorphous thin film oxides using laser-induced breakdown spectroscopy

    SciTech Connect

    Widjonarko, N. Edwin; Perkins, John D.; Leisch, Jennifer E.; Parilla, Philip A.; Curtis, Calvin J.; Ginley, David S.; Berry, Joseph J.

    2010-07-15

    Laser-induced breakdown spectroscopy (LIBS) is a recently developed locally destructive elemental analysis technique that can be used to analyze solid, liquid, and gaseous samples. In the system explored here, a neodymium-doped yttrium aluminum garnet laser ablates a small amount of the sample and spectral emission from the plume is analyzed using a set of synchronized spectrometers. We explore the use of LIBS to map the stoichiometry of compositionally graded amorphous indium zinc oxide thin-film libraries. After optimization of the experimental parameters (distance between lens and samples, spot size on the samples, etc.), the LIBS system was calibrated against inductively coupled plasma atomic emission spectroscopy which resulted in a very consistent LIBS-based elemental analysis. Various parameters that need to be watched closely in order to produce consistent results are discussed. We also compare LIBS and x-ray fluorescence as techniques for the compositional mapping of libraries.

  5. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular Passivation

    SciTech Connect

    Rajachidambaram, Meena Suhanya; Pandey, Archana; Vilayur Ganapathy, Subramanian; Nachimuthu, Ponnusamy; Thevuthasan, Suntharampillai; Herman, Gregory S.

    2013-10-21

    The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFT) have been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid (n-HPA) when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.

  6. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Xu, Rui; He, Jian; Song, Yang; Li, Wei; Zaslavsky, A.; Paine, D. C.

    2014-09-01

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to 10-2 ? cm2, 3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of 27 cm2/V s and an on/off ratio >107. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  7. Solid-State Electrochromic Device Consisting of Amorphous WO3 and Various Thin Oxide Layers

    NASA Astrophysics Data System (ADS)

    Shizukuishi, Makoto; Shimizu, Isamu; Inoue, Eiichi

    1980-11-01

    A mixed oxide containing Cr2O3 was introduced into an amorphous WO3 solid-state electrochromic device (ECD) in order to improve its colour memory effect. The electrochromic characteristics were greatly affected by the chemical constituents of a dielectric layer on the a-WO3 layer. Particularly, long memory effect and low power dissipation were attained in a solid-state ECD consisting of a-WO3 and Cr2O3\\cdotV2O5(50 wt.%). Some electrochromic characteristics of the a-WO3/Cr2O3\\cdotV2O5 ECD and the role of V2O5 were investigated.

  8. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    SciTech Connect

    Cho, Byungsu; Choi, Yonghyuk; Shin, Seokyoon; Jeon, Heeyoung; Seo, Hyungtak; Jeon, Hyeongtag

    2014-01-27

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  9. Carrier Transport at Metal/Amorphous Hafnium-Indium-Zinc Oxide Interfaces.

    PubMed

    Kim, Seoungjun; Gil, Youngun; Choi, Youngran; Kim, Kyoung-Kook; Yun, Hyung Joong; Son, Byoungchul; Choi, Chel-Jong; Kim, Hyunsoo

    2015-10-14

    In this paper, the carrier transport mechanism at the metal/amorphous hafnium-indium-zinc oxide (a-HIZO) interface was investigated. The contact properties were found to be predominantly affected by the degree of interfacial reaction between the metals and a-HIZO; that is, a higher tendency to form metal oxide phases leads to excellent Ohmic contact via tunneling, which is associated with the generated donor-like oxygen vacancies. In this case, the Schottky-Mott theory is not applicable. Meanwhile, metals that do not form interfacial metal oxide, such as Pd, follow the Schottky-Mott theory, which results in rectifying Schottky behavior. The Schottky characteristics of the Pd contact to a-HIZO can be explained in terms of the barrier inhomogeneity model, which yields a mean barrier height of 1.40 eV and a standard deviation of 0.14 eV. The work function of a-HIZO could therefore be estimated as 3.7 eV, which is in good agreement with the ultraviolet photoelectron spectroscopy (3.68 eV). Our findings will be useful for establishing a strategy to form Ohmic or Schottky contacts to a-HIZO films, which will be essential for fabricating reliable high-performance electronic devices. PMID:26411354

  10. A possible method for the characterization of amorphous slags: Recovery of refractory metal oxides from tin slags

    NASA Astrophysics Data System (ADS)

    Gaballah, I.; Allain, E.; Meyer-Joly, M.-Ch.; Malau, K.

    1992-06-01

    As X-ray, neutron scattering, and vibrational spectroscopy are not useful for amorphous solids characterization, microprobe analysis is used in determining the composition of these materials. The correlation coefficient matrix between the slags elements is obtained by a simple computer program which is commercially available. This matrix is employed for the constitution of the neighborhood of an element, which may be called the pseudo-structure (PS). The proposed method is a statistical view of the probable associations between the elements. It gives an insight into the amorphous solids' structure. The lixiviation of tin slags in order to recover the refractory metals they contain is used to illustrate the importance of the PS. A multistage acid-basic (AB) leaching leads to the dissolution of the matrix composed of Ca, Al, Fe, Mn, Si, ... oxides and the concentration of refractory metal oxides in the residues. The optimum tantalum and niobium recovery rates are 93 and 78 pct, respectively. The results of this research indicate that the leaching of the amorphous tin slag is a structure-sensitive operation. However, one may emphasize that the PS of amorphous solids is a simplification of the real neighborhood of ele-ments. It may be considered as a complement to other methods of investigation of the amorphous solids and may facilitate the hydrometallurgical process planning.

  11. Stability of phosphonic acid self-assembled monolayers on amorphous and single-crystalline aluminum oxide surfaces in aqueous solution.

    PubMed

    Thissen, Peter; Valtiner, Markus; Grundmeier, Guido

    2010-01-01

    The formation of octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs) and their stability in water has been studied on four distinctly different aluminum oxide surfaces. The aim was to improve the understanding of the state of binding between the phosphonic acid to the oxide surface and how this interaction depends on the structure and termination of the oxide surface. Single crystalline Al(2)O(3)(0001) and Al(2)O(3)(1102) surfaces were compared to amorphous oxide passive films on aluminum and physical vapor deposited (PVD) amorphous aluminum oxide films on gold. The monolayers were adsorbed from ethanol solution, characterized by means of high-resolution in situ atomic force microscopy (AFM), contact angle measurements, polarization modulated infrared reflection absorption spectroscopy (PM-IRRAS), and diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS), and proved to be self-assembled. On Al(2)O(3)(1102) surfaces and amorphous Al(2)O(3) surfaces, the ODPA self-assembled monolayers showed high stability in aqueous environments. However, the adsorbed ODPA monolayers were substituted by the adsorption of interfacial water on the Al(2)O(3)(0001) surface via the intermediate formation of micelles. The different stability of the monolayers in aqueous environments is explained by the variation of interfacial binding states ranging from ionic interactions between phosphonate groups and the positively charged hydrolytated oxide surface to directed coordination bonds between the phosphonate group and Al ions. PMID:20000361

  12. Widely bandgap tunable amorphous Cd-Ga-O oxide semiconductors exhibiting electron mobilities ?10 cm2 V-1 s-1

    NASA Astrophysics Data System (ADS)

    Yanagi, Hiroshi; Sato, Chiyuki; Kimura, Yota; Suzuki, Issei; Omata, Takahisa; Kamiya, Toshio; Hosono, Hideo

    2015-02-01

    Amorphous oxide semiconductors exhibit large electron mobilities; however, their bandgaps are either too large for solar cells or too small for deep ultraviolet applications depending on the materials system. Herein, we demonstrate that amorphous Cd-Ga-O semiconductors display bandgaps covering the entire 2.5-4.3 eV region while maintaining large electron mobilities ?10 cm2 V-1 s-1. The band alignment diagram obtained by ultraviolet photoemission spectroscopy and the bandgap values reveal that these semiconductors form type-II heterojunctions with p-type Cu2O, which is suitable for solar cells and solar-blind ultraviolet sensors.

  13. Amorphous cobalt potassium phosphate microclusters as efficient photoelectrochemical water oxidation catalyst

    NASA Astrophysics Data System (ADS)

    Zhang, Ye; Zhao, Chunsong; Dai, Xuezeng; Lin, Hong; Cui, Bai; Li, Jianbao

    2013-12-01

    A novel amorphous cobalt potassium phosphate hydrate compound (KCoPO4H2O) is identified to be active photocatalyst for oxygen evolution reaction (OER) to facilitate hydrogen generation from water photolysis. It has been synthesized through a facile and cost-effective solution-based precipitation method using earth-abundant materials. Its highly porous structure and large surface areas are found to be responsible for the excellent electrochemical performance featuring a low OER onset at 550 mVSCE and high current density in alkaline condition. Unlike traditional cobalt-based spinel oxides (Co3O4, NiCo2O4) and phosphate (Co-Pi, Co(PO3)2) electrocatalysts, with proper energy band alignment for light-assisted water oxidation, cobalt potassium phosphate hydrate also exhibits robust visible-light response, generating a photocurrent density of 200 ?A cm-2 at 0.7 VSCE. This catalyst could thus be considered as a promising candidate to perform photoelectrochemical water splitting.

  14. Effect of ultraviolet light exposure to boron doped hydrogenated amorphous silicon oxide thin film

    NASA Astrophysics Data System (ADS)

    Baek, Seungsin; Iftiquar, S. M.; Jang, Juyeon; Lee, Sunhwa; Kim, Minbum; Jung, Junhee; Park, Hyeongsik; Park, Jinjoo; Kim, Youngkuk; Shin, Chonghoon; Lee, Youn-Jung; Yi, Junsin

    2012-11-01

    We have investigated the effect of ultraviolet (UV) light exposure to boron doped (p-type) hydrogenated amorphous silicon oxide (p-a-SiO:H) thin semiconductor films by measuring changes in its structural, electrical and optical properties. After a 50 h of UV light soaking (LS) of the films, that have 1.2, 6.9, 15.2, 25.3 at.% oxygen content (C(O)) and optical gap (E04) of 1.897, 2.080, 2.146 and 2.033 eV, show a relative increase in the C(O) by 28.0%, 9.8%, 2.0%, 3.1%, a relative increase in the Urbach energy (Eu) by 42%, 24%, 8%, 0%, decrease in the E04 by 66, 2, 12, 19 meV and the gap state defect density (Nd) show an increase by 6.5%, 3.4%, 0.7%, 0.1%. At higher oxygen content the observed UV light induced degradation (LID) is relatively less than that for films with lower oxygen content, indicating that higher oxides face less changes under the UV light.

  15. Quantitative analysis of amorphous indium zinc oxide thin films synthesized by Combinatorial Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Axente, E.; Socol, G.; Beldjilali, S. A.; Mercadier, L.; Luculescu, C. R.; Trinca, L. M.; Galca, A. C.; Pantelica, D.; Ionescu, P.; Becherescu, N.; Hermann, J.; Craciun, V.

    2014-10-01

    The use of amorphous and transparent oxides is a key for the development of new thin film transistors and displays. Recently, indium zinc oxide (IZO) was shown to exhibit high transparency in the visible range, low resistivity, and high mobility. Since the properties and the cost of these films depend on the In/(In + Zn) values, the measurement of this ratio is paramount for future developments and applications. We report on accurate analysis of the elemental composition of IZO thin films synthesized using a Combinatorial Pulsed Laser Deposition technique. The monitoring of the thin films elemental composition by Laser-Induced Breakdown Spectroscopy was chosen in view of further in situ and real-time technological developments and process control during IZO fabrication. Our analytical approach is based on plasma modeling, the recorded spectra being then compared to the spectral radiance computed for plasmas in local thermal equilibrium. The cation fractions measured were compared to values obtained by complementary measurements using energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. Spectroscopic ellipsometry assisted the scientific discussion. A good agreement between methods was found, independently of the relative fraction of indium and zinc that varied from about 65 to 90 and 35 to 10 at%, respectively, and the measurement uncertainties associated to each analytical method.

  16. Lithium Storage in Microstructures of Amorphous Mixed-Valence Vanadium Oxide as Anode Materials.

    PubMed

    Zhao, Di; Zheng, Lirong; Xiao, Ying; Wang, Xia; Cao, Minhua

    2015-07-01

    Constructing three-dimensional (3 D) nanostructures with excellent structural stability is an important approach for realizing high-rate capability and a high capacity of the electrode materials in lithium-ion batteries (LIBs). Herein, we report the synthesis of hydrangea-like amorphous mixed-valence VOx microspheres (a-VOx MSs) through a facile solvothermal method followed by controlled calcination. The resultant hydrangea-like a-VOx MSs are composed of intercrossed nanosheets and, thus, construct a 3 D network structure. Upon evaluation as an anode material for LIBs, the a-VOx MSs show excellent lithium-storage performance in terms of high capacity, good rate capability, and long-term stability upon extended cycling. Specifically, they exhibit very stable cycling behavior with a highly reversible capacity of 1050 mA h g(-1) at a rate of 0.1 A g(-1) after 140 cycles. They also show excellent rate capability, with a capacity of 390 mA h g(-1) at a rate as high as 10 A g(-1) . Detailed investigations on the morphological and structural changes of the a-VOx MSs upon cycling demonstrated that the a-VOx MSs went through modification of the local VO coordinations accompanied with the formation of a higher oxidation state of V, but still with an amorphous state throughout the whole discharge/charge process. Moreover, the a-VOx MSs can buffer huge volumetric changes during the insertion/extraction process, and at the same time they remain intact even after 200 cycles of the charge/discharge process. Thus, these microspheres may be a promising anode material for LIBs. PMID:26018759

  17. Water oxidation catalysis: an amorphous quaternary Ba-Sr-Co-Fe oxide as a promising electrocatalyst for the oxygen-evolution reaction.

    PubMed

    Zhang, Cuijuan; Berlinguette, Curtis P; Trudel, Simon

    2016-01-25

    We present an amorphous quaternary Ba-Sr-Co-Fe oxide (a-BSCF) with a specific stoichiometry, readily fabricated via a photochemical decomposition method. a-BSCF demonstrates high catalytic activity towards the oxygen-evolution reaction (OER). PMID:26659269

  18. In situ study of the crystallization from amorphous to cubic zirconium oxide : rieetveld and reverse monte carlo analyses.

    SciTech Connect

    Zhang, F.; Chupas, P. J.; Lui, S. L. A.; Hanson, J. C.; Caliebe, W. A.; Lee, P. L.; Chan, S.-W.; X-Ray Science Division; Columbia Univ.; State Univ. of New York at Stony Brook; BNL

    2007-01-01

    The amorphous-to-cubic (a-c) crystallization of nanoZrO{sub 2} in a reducing environment was studied by synchrotron X-ray diffraction. Rietveld analysis was performed to study the changes in crystallite size and lattice parameter as the cubic phase emerged. The pair distribution function (PDF) was obtained from the Fourier transformation of the normalized XRD patterns. A reverse Monte Carlo (RMC) simulation was applied to provide details of the local structure during the crystallization process as well as to calculate partial PDFs of Zr-Zr and Zr-O during the crystallization. The number of Zr's next-nearest neighbors of Zr remains 12, whereas the number of O's as nearest neighbors of Zr increases from 6.7 to 7.3 as the material evolves from an amorphous into a cubic structure, suggesting the persistence of a high concentration of oxygen vacancies. These simulated atomic structures show that the local structure of the amorphous phase bears resemblance to the short-range arrangement of cubic ZrO{sub 2}, consistent with the results of X-ray absorption near edge spectroscopy (XANES) at Zr L{sub II} and L{sub III}. The amorphous-to-crystalline phase transformation is affected by the environment. Under an oxidizing condition, the amorphous phase crystallizes directly to tetragonal and subsequently to monoclinic zirconia.

  19. In situ Study of the Crystallization from Amorphous to Cubic Zirconium Oxide: Rietveld and Reverse Monte Carlo Analyses

    SciTech Connect

    Zhang,F.; Chupas, P.; Lui, S.; Hanson, J.; Caliebe, W.; Lee, P.; Chan, S.

    2007-01-01

    The amorphous-to-cubic (a-c) crystallization of nanoZrO{sub 2} in a reducing environment was studied by synchrotron X-ray diffraction. Rietveld analysis was performed to study the changes in crystallite size and lattice parameter as the cubic phase emerged. The pair distribution function (PDF) was obtained from the Fourier transformation of the normalized XRD patterns. A reverse Monte Carlo (RMC) simulation was applied to provide details of the local structure during the crystallization process as well as to calculate partial PDFs of Zr-Zr and Zr-O during the crystallization. The number of Zr's next-nearest neighbors of Zr remains 12, whereas the number of O's as nearest neighbors of Zr increases from 6.7 to 7.3 as the material evolves from an amorphous into a cubic structure, suggesting the persistence of a high concentration of oxygen vacancies. These simulated atomic structures show that the local structure of the amorphous phase bears resemblance to the short-range arrangement of cubic ZrO2, consistent with the results of X-ray absorption near edge spectroscopy (XANES) at Zr L{sub II} and L{sub III}. The amorphous-to-crystalline phase transformation is affected by the environment. Under an oxidizing condition, the amorphous phase crystallizes directly to tetragonal and subsequently to monoclinic zirconia.

  20. Stabilization of FGD gypsum for its disposal in landfills using amorphous aluminium oxide as a fluoride retention additive.

    PubMed

    Alvarez-Ayuso, E; Querol, X

    2007-09-01

    The applicability of amorphous aluminium oxide as a fluoride retention additive to flue gas desulphurisation (FGD) gypsum was studied as a way of stabilizing this by-product for its disposal in landfills. Using a batch method the sorption behaviour of amorphous aluminium oxide was evaluated at the pH (about 6.5) and background electrolyte conditions (high chloride and sulphate concentrations) found in FGD gypsum leachates. It was found that fluoride sorption on amorphous aluminium oxide was a very fast process with equilibrium attained within the first half an hour of interaction. The sorption process was well described by the Langmuir model, offering a maximum fluoride sorption capacity of 61.7 mg g(-1). Fluoride sorption was unaffected by chloride co-existing ions, while slightly decreased (about 20%) by competing sulphate ions. The use of amorphous aluminium oxide in the stabilization of FGD gypsum proved to greatly decreased its fluoride leachable content (in the range 5-75% for amorphous aluminium oxide doses of 0.1-2%, as determined by the European standard EN 12457-4 [EN-12457-4 Characterization of waste-leaching-compliance test for leaching of granular waste materials and sludges-Part 4: one stage batch test at a liquid to solid ratio of 10 l/kg for materials with particle size below 10mm (without or with size reduction)]), assuring the characterization of this by-product as a waste acceptable at landfills of non-hazardous wastes according to the Council Decision 2003/33/EC [Council Decision 2003/33/EC of 19 December 2002. Establishing criteria and procedures for the acceptance of waste at landfills pursuant to Article 16 of and Annex II to Directive 1999/31/EC] on landfill of wastes. Furthermore, as derived from column leaching studies, the proposed stabilization system proved to be highly effective in simulated conditions of disposal, displaying a fluoride leaching reduction value about 81% for an amorphous aluminium oxide added amount of 2%. PMID:17509651

  1. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    SciTech Connect

    Ou-Yang, Wei E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Nabatame, Toshihide

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  2. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

    PubMed Central

    Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

    2015-01-01

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance. PMID:26080437

  3. Moisture-assisted cracking and atomistic crack path meandering in oxidized hydrogenated amorphous silicon carbide films

    NASA Astrophysics Data System (ADS)

    Matsuda, Yusuke; King, Sean W.; Oliver, Mark; Dauskardt, Reinhold H.

    2013-02-01

    Moisture-assisted cracking of silica-derived materials results from a stress-enhanced reaction between water molecules and moisture-sensitive SiOSi bonds at the crack tip. We report the moisture-assisted cracking of oxidized hydrogenated amorphous silicon carbide films (a-SiCO:H) consisting of both moisture-sensitive SiOSi bonds and moisture-insensitive bonds. The sensitivity of the films to moisture-assisted cracking was observed to increase with the SiOSi bond density, ρSiOSi. This sensitivity was correlated with the number of SiOSi bonds ruptured, NSiOSi, through an atomistic kinetic fracture model. By comparing these correlated NSiOSi values with those estimated by a planar crack model, we demonstrated that at the atomistic scale the crack path meanders three-dimensionally so as to intercept the most SiOSi bonds. This atomistic crack path meandering was verified by a computational method based on graph theory and molecular dynamics. Our findings could provide a basis for better understanding of moisture-assisted cracking in materials consisting of other types of moisture-sensitive and moisture-insensitive bonds.

  4. Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour.

    PubMed

    Aoki, Yoshitaka; Wiemann, Carsten; Feyer, Vitaliy; Kim, Hong-Seok; Schneider, Claus Michael; Ill-Yoo, Han; Martin, Manfred

    2014-01-01

    In thin films of mixed ionic electronic conductors sandwiched by two ion-blocking electrodes, the homogeneous migration of ions and their polarization will modify the electronic carrier distribution across the conductor, thereby enabling homogeneous resistive switching. Here we report non-filamentary memristive switching based on the bulk oxide ion conductivity of amorphous GaOx (x~1.1) thin films. We directly observe reversible enrichment and depletion of oxygen ions at the blocking electrodes responding to the bias polarity by using photoemission and transmission electron microscopies, thus proving that oxygen ion mobility at room temperature causes memristive behaviour. The shape of the hysteresis I-V curves is tunable by the bias history, ranging from narrow counter figure-eight loops to wide hysteresis, triangle loops as found in the mathematically derived memristor model. This dynamical behaviour can be attributed to the coupled ion drift and diffusion motion and the oxygen concentration profile acting as a state function of the memristor. PMID:24632885

  5. Hydrogen evolution from a copper(I) oxide photocathode coated with an amorphous molybdenum sulphide catalyst

    NASA Astrophysics Data System (ADS)

    Morales-Guio, Carlos G.; Tilley, S. David; Vrubel, Heron; Grtzel, Michael; Hu, Xile

    2014-01-01

    Concerns over climate change resulting from accumulation of anthropogenic carbon dioxide in the atmosphere and the uncertainty in the amount of recoverable fossil fuel reserves are driving forces for the development of renewable, carbon-neutral energy technologies. A promising clean solution is photoelectrochemical water splitting to produce hydrogen using abundant solar energy. Here we present a simple and scalable technique for the deposition of amorphous molybdenum sulphide films as hydrogen evolution catalyst onto protected copper(I) oxide films. The efficient extraction of excited electrons by the conformal catalyst film leads to photocurrents of up to -5.7mAcm-2 at 0V versus the reversible hydrogen electrode (pH 1.0) under simulated AM 1.5 solar illumination. Furthermore, the photocathode exhibits enhanced stability under acidic environments, whereas photocathodes with platinum nanoparticles as catalyst deactivate more rapidly under identical conditions. The work demonstrates the potential of earth-abundant light-harvesting material and catalysts for solar hydrogen production.

  6. Short Range Order Structural Investigations of Several Amorphous Lanthanide Hydrous Oxides

    NASA Astrophysics Data System (ADS)

    Leschnitzer, Dale Hugo

    Seven amorphous lanthanide hydrous oxides, europium, gadolinium, terbium, dysprosium, thulium, ytterbium, and lutetium, were synthesized in order to study their short range order. Synthesis procedures and peripheral investigations including X-ray powder diffraction, TGA, DSC, IR, and SEM are discussed in detail. The theory behind the X-ray scattering techniques and a detailed discussion of data treatment and normalization are also presented. A modified Siemens -K805 type F horizontal goniometer diffractometer with a custom monochromator and Kevex Si(Li) center-of-gravity solid state detector was employed for the data collection and is described in detail. The lanthanide systems Eu through Yb were nine -coordinated and the lutetium sample had a coordination number between 6 and 7 (6.4). Calculated Ln-O distances ranged from 2.46 down to 2.34 A. Also reported are Ln -Ln and O-O distances and O-Ln-O angles. Scattering profiles, interference functions, radial distribution functions, and pair functions are displayed for each of the studied compounds. In addition, structural modeling was performed to try to classify the coordination geometry. The systems Eu through Yb appear to closely match the tricapped trigonal prism geometry, D _{rm 3h}, of their corresponding trihydroxide counterparts. The lutetium sample appears to be a mixture of both six-coordinated octahedrally oriented metal centers and seven-coordinated monocapped trigonal prism oriented metal centers. The modeling techniques, as well as their pros and cons, are discussed.

  7. Short range order structural investigations of several amorphous lanthanide hydrous oxides

    SciTech Connect

    Leschnitzer, D.H.

    1992-01-01

    Seven amorphous lanthanide oxides, europium, gadolinium, terbium, dysprosium, thulium, ytterbium, and lutetium, were synthesized in order to study their short range order. Synthesis procedures and peripheral investigations including X-ray powder diffraction, TGA, DSC, IR, and SEM are discussed in detail. The theory behind the X-ray scattering techniques and a detailed discussion of data treatment and normalization are also presented. A modified Siemens-K805 type F horizontal goniometer diffractometer with a custom monochromator and Kevex Si(Li) center-of-gravity solid state detector was employed for the data collection and is described in detail. The lanthanide systems Eu through Yb were nine-coordinated and the lutetium sample had a coordination number between 6 and 7 (6.4). Calculated Ln-O distances ranged from 2.46 down to 2.34 [angstrom]. Also reported are Ln-Ln and O-O distances and O-Ln-O angles. Scattering profiles, interference functions, radial distribution functions, and pair functions are displayed for each of the studied compounds. In addition, structural modeling was performed to try to classify the coordination geometry. The systems Eu through Yb appear to closely match the tricapped trigonal prism geometry, D[sub 3h], of their corresponding trihydroxide counterparts. The lutetium sample appears to be a mixture of both six-coordinated octahedrally oriented metal centers and seven-coordinated monocapped trigonal prism oriented metal centers. The modeling techniques, as well as their pros and cons, are discussed.

  8. Lithium perchlorate ion pairing in a model of amorphous polyethylene oxide

    SciTech Connect

    Halley, J.W.; Duan, Y.; Curtiss, L.A.; Baboul, A.G.

    1999-08-01

    We report a molecular dynamics study of pairing and dynamics of lithium cation and perchlorate anion in a previously reported model of amorphous polyethylene oxide. We are particularly interested in the question of whether these ions pair in the model, as previously reported experimentally. We calculate the potential of mean force between a lithium and perchlorate ion in the system for several temperatures when a pair of ions is at various separation distances in our model. We find evidence for two minima in the potential of mean force, one at lithium{endash}chlorine separations of 3.5 {Angstrom} and about 6.5 {Angstrom}. We studied the same system with five ion pairs in the system and again find two minima at the same separation distances but in this case there is evidence of entropic effects in the binding free energy of the pairs at 3.5 {Angstrom}. A study of radial distribution functions permits us to deduce information concerning the structure of the paired states. {copyright} {ital 1999 American Institute of Physics.}

  9. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    SciTech Connect

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  10. InGaZnO thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios

    SciTech Connect

    Jo, Young Je; Lee, In-Hwan; Kwak, Joon Seop

    2012-10-15

    We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indiumgalliumzinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

  11. Determination of photocatalytic activity in amorphous and crystalline titanium oxide films prepared using plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-Yang; Chiang, Bo-Sheng; Chang, Springfield; Liu, Day-Shan

    2011-01-01

    Hydro-oxygenated amorphous titanium oxide (a-TiO x:OH) films were prepared by plasma-enhanced chemical vapor deposition (PECVD) using precursors of titanium tetraisopropoxide (TTIP) and oxygen. The influences of chemical states and crystal quality on the photocatalytic activity were systematically investigated in the as-deposited and post-annealed films. The degree of the photocatalytic activity was deeply correlated with the porosity related to the hydroxyl (OH) groups in the as-deposited amorphous film. The crystallized anatase structures was observed from the 200 C-deposited a-TiO x:OH film after a post-annealing treatment at 400 C. The photocatalytic activity related to the film with anatase structure was markedly superior to that of an amorphous film with porous structures. The larger the crystal size of the anatase structure, the higher the photocatalytic activity obtained. At elevated annealed temperatures, the inferior anatase structure due to the crystalline transformation led to a low photocatalytic activity. It was concluded that the photocatalytic activity of an amorphous TiO x film prepared using PECVD was determined by the porosity originating from the functional OH groups in the film, whereas the crystalline quality of anatase phase in the annealed poly-TiO x film was crucial to the photocatalytic activity.

  12. Ketjenblack carbon supported amorphous manganese oxides nanowires as highly efficient electrocatalyst for oxygen reduction reaction in alkaline solutions.

    PubMed

    Lee, Jang-Soo; Park, Gi Su; Lee, Ho Il; Kim, Sun Tai; Cao, Ruiguo; Liu, Meilin; Cho, Jaephil

    2011-12-14

    A composite air electrode consisting of Ketjenblack carbon (KB) supported amorphous manganese oxide (MnOx) nanowires, synthesized via a polyol method, is highly efficient for the oxygen reduction reaction (ORR) in a Zn-air battery. The low-cost and highly conductive KB in this composite electrode overcomes the limitations due to low electrical conductivity of MnOx while acting as a supporting matrix for the catalyst. The large surface area of the amorphous MnOx nanowires, together with other microscopic features (e.g., high density of surface defects), potentially offers more active sites for oxygen adsorption, thus significantly enhancing ORR activity. In particular, a Zn-air battery based on this composite air electrode exhibits a peak power density of ?190 mW/cm2, which is far superior to those based on a commercial air cathode with Mn3O4 catalysts. PMID:22050041

  13. AMORPHOUS POROUS MIXED OXIDES: Sol-Gel Ways to a Highly Versatile Class of Materials and Catalysts

    NASA Astrophysics Data System (ADS)

    Frenzer, Gerald; Maier, Wilhelm F.

    2006-08-01

    This review discusses the preparation, characterization, and application of amorphous porous mixed oxides, a rapidly growing class of materials with wide applications and a huge potential for the tailoring of chemical composition, microstructure, porosity, and surface properties. In contrast to crystalline materials, these amorphous mixed oxides are prepared under mild reaction conditions in ambient atmosphere. An ever-increasing variety of precursors, additives, modifiers, solvents, catalysts, and posttreatment conditions provide ample fine-tuning options. These materials often display properties commonly associated with well-defined crystalline phases. The functional properties of such solids are largely unexplored and provide a tremendous opportunity for the development of new or alternative materials (solids with a function). Here, emphasis is paid to micro- and mesoporous mixed oxides and their catalytic properties. Easy access to these materials is offset by their much more problematic characterization. Microstructure, chemical structure, morphology, and pore sizes often show broad distributions, and materials description cannot compare with the precise data associated with crystalline phases. The facile preparation and accessibility of these materials make them ideally suited for the application of high-throughput technologies (HTT), which dramatically accelerate searches for new materials as well as fine tuning and optimization. HTT also allow investigators for the first time to access and optimize multinary mixed oxides on a realistic timescale.

  14. Widespread oxidized and hydrated amorphous silicates in CR chondrites matrices: Implications for alteration conditions and H2 degassing of asteroids

    NASA Astrophysics Data System (ADS)

    Le Guillou, Corentin; Changela, Hitesh G.; Brearley, Adrian J.

    2015-06-01

    The CR chondrites carry one of the most pristine records of the solar nebula materials that accreted to form planetesimals. They have experienced very variable degrees of aqueous alteration, ranging from incipient alteration in their matrices to the complete hydration of all of their components. In order to constrain their chemical alteration pathways and the conditions of alteration, we have investigated the mineralogy and Fe oxidation state of silicates in the matrices of 8 CR chondrites, from type 3 to type 1. Fe-L edge X-ray Absorption Near Edge Structure (XANES) was performed on matrix FIB sections using synchrotron-based scanning transmission X-ray microscopy (STXM). The Fe3+ / ? Fe ratio of submicron silicate particles was obtained and coordinated with TEM observations. In all the least altered CR chondrites (QUE 99177, EET 87770, EET 92042, LAP 02342, GRA 95229 and Renazzo), we find that the matrices consist of abundant submicron Fe-rich hydrated amorphous silicate grains, mixed with nanometer-sized phyllosilicates. The Fe3+ / ? Fe ratios of both amorphous and nanocrystalline regions are very high with values ranging from 68 to 78%. In the most altered samples (Al Rais and GRO 95577), fine-grained phyllosilicates also have a high Fe3+ / ? Fe ratio (around 70%), whereas the coarse, micrometer-sized phyllosilicates are less oxidized (down to 55%) and have a lower iron content. These observations suggest the following sequence: submicron Fe2+-amorphous silicate particles were the building blocks of CR matrices; after accretion they were quickly hydrated and oxidized, leading to a metastable, amorphous gel-like phase. Nucleation and growth of crystalline phyllosilicates was kinetically-limited in most type 3 and 2 CRs, but increased as alteration became more extensive in Al Rais and GRO 95577. The decreasing Fe3+ / ? Fe ratio is interpreted as a result of the transfer of Fe3+ from silicates to oxides during growth, while aqueous alteration progressed (higher temperature, longer duration, change of fluid composition). In a fully closed system, equilibrium thermodynamics suggest that the water to rock ratios, typically assumed to be low (<1) for chondrites, should primarily control the iron valency of the silicates and predict a lower Fe3+ / ? Fe ratio. Such a high Fe3+ / ? Fe value could be accounted for, however, if the system was partially open, at least with respect to H2 (and other gases as well). Rapid degassing of the fluid would have favored more oxidizing fluid conditions. Recently proposed scenarios involving some degree of water D/H increase through Rayleigh isotopic fractionation are supported by these results.

  15. Electrical and optical characteristics of Co-sputtered amorphous Ce-doped indium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Koo, Ja Hyun; Kang, Tae Sung; Kim, Tae Yoon; Hong, Jin Pyo

    2013-02-01

    We report the electrical and the optical characteristics of amorphous cerium-gallium-zinc-oxide (a-CIZO) thin-film transistors (TFTs) as a function of the cerium content inside the a-CIZO channel layers. The a-CIZO films were systematically prepared by using a co-sputtering method with a combination of RF-sputtered indium-zinc-oxide (IZO) at a fixed power of 50 W and cerium-oxide (CeO2) at powers from 15 to 30 W. The Ce content in the CIZO layers increased with increasing RF power on the CeO2 target. The a-CIZO TFT at the optimum power of 15 W exhibited a mobility of 2.5 cm2/Vsec, a threshold voltage ( V T ) of 0.22 V, ?V T shifts of less than 5.2 V under negative bias stress, and a Ion/Ioff ratio of 2.40 1010.

  16. Modeling the adsorption of mercury(II) on (hydr)oxides. 2: {alpha}-FeOOH (goethite) and amorphous silica

    SciTech Connect

    Bonnissel-Gissinger, P.; Alnot, M.; Ehrhardt, J.J.; Lickes, J.P.; Behra, P.

    1999-07-15

    The surface complexation model is used to describe sorption experiments of inorganic mercury(II) in the presence of an amorphous silica, Aerosil 200, or an iron (hydr)oxide, the goethite {alpha}-FeOOH (Bayferrox 910). In the simulations, one assumes the formation of a monodentate surface complex {triple_bond}S{single_bond}OHgOH and {triple_bond}S{single_bond}OHgCl, when chlorides are present in solution. Participation of the complex {triple_bond}S{single_bond}OHgCl has been especially evidenced. Comparisons with other data from the literature have been made to investigate the influence of the nature of the oxide on the mechanism of mercury(II) adsorption. X-ray photoelectron spectroscopy was used to characterize the surface of the (hydr)oxides prior to adsorption and to observe when possible the mercury surface compounds.

  17. Effects of amorphous silica coating on cerium oxide nanoparticles induced pulmonary responses.

    PubMed

    Ma, Jane; Mercer, Robert R; Barger, Mark; Schwegler-Berry, Diane; Cohen, Joel M; Demokritou, Philip; Castranova, Vincent

    2015-10-01

    Recently cerium compounds have been used in a variety of consumer products, including diesel fuel additives, to increase fuel combustion efficiency and decrease diesel soot emissions. However, cerium oxide (CeO2) nanoparticles have been detected in the exhaust, which raises a health concern. Previous studies have shown that exposure of rats to nanoscale CeO2 by intratracheal instillation (IT) induces sustained pulmonary inflammation and fibrosis. In the present study, male Sprague-Dawley rats were exposed to CeO2 or CeO2 coated with a nano layer of amorphous SiO2 (aSiO2/CeO2) by a single IT and sacrificed at various times post-exposure to assess potential protective effects of the aSiO2 coating. The first acellular bronchoalveolar lavage (BAL) fluid and BAL cells were collected and analyzed from all exposed animals. At the low dose (0.15mg/kg), CeO2 but not aSiO2/CeO2 exposure induced inflammation. However, at the higher doses, both particles induced a dose-related inflammation, cytotoxicity, inflammatory cytokines, matrix metalloproteinase (MMP)-9, and tissue inhibitor of MMP at 1day post-exposure. Morphological analysis of lung showed an increased inflammation, surfactant and collagen fibers after CeO2 (high dose at 3.5mg/kg) treatment at 28days post-exposure. aSiO2 coating significantly reduced CeO2-induced inflammatory responses in the airspace and appeared to attenuate phospholipidosis and fibrosis. Energy dispersive X-ray spectroscopy analysis showed Ce and phosphorous (P) in all particle-exposed lungs, whereas Si was only detected in aSiO2/CeO2-exposed lungs up to 3days after exposure, suggesting that aSiO2 dissolved off the CeO2 core, and some of the CeO2 was transformed to CePO4 with time. These results demonstrate that aSiO2 coating reduce CeO2-induced inflammation, phospholipidosis and fibrosis. PMID:26210349

  18. Effects of amorphous silica coating on cerium oxide nanoparticles induced pulmonary responses

    PubMed Central

    Ma, Jane; Mercer, Robert R.; Barger, Mark; Schwegler-Berry, Diane; Cohen, Joel M.; Demokritou, Philip; Castranova, Vincent

    2015-01-01

    Recently cerium compounds have been used in a variety of consumer products, including diesel fuel additives, to increase fuel combustion efficiency and decrease diesel soot emissions. However, cerium oxide (CeO2) nanoparticles have been detected in the exhaust, which raises a health concern. Previous studies have shown that exposure of rats to nanoscale CeO2 by intratracheal instillation (IT) induces sustained pulmonary inflammation and fibrosis. In the present study, male Sprague–Dawley rats were exposed to CeO2 or CeO2 coated with a nano layer of amorphous SiO2 (aSiO2/CeO2) by a single IT and sacrificed at various times post-exposure to assess potential protective effects of the aSiO2 coating. The first acellular bronchoalveolar lavage (BAL) fluid and BAL cells were collected and analyzed from all exposed animals. At the low dose (0.15 mg/kg), CeO2 but not aSiO2/CeO2 exposure induced inflammation. However, at the higher doses, both particles induced a dose-related inflammation, cytotoxicity, inflammatory cytokines, matrix metalloproteinase (MMP)-9, and tissue inhibitor of MMP at 1 day post-exposure. Morphological analysis of lung showed an increased inflammation, surfactant and collagen fibers after CeO2 (high dose at 3.5 mg/kg) treatment at 28 days post-exposure. aSiO2 coating significantly reduced CeO2-induced inflammatory responses in the airspace and appeared to attenuate phospholipidosis and fibrosis. Energy dispersive X-ray spectroscopy analysis showed Ce and phosphorous (P) in all particle-exposed lungs, whereas Si was only detected in aSiO2/CeO2-exposed lungs up to 3 days after exposure, suggesting that aSiO2 dissolved off the CeO2 core, and some of the CeO2 was transformed to CePO4 with time. These results demonstrate that aSiO2 coating reduce CeO2-induced inflammation, phospholipidosis and fibrosis. PMID:26210349

  19. Metal-insulator transitions in IZO, IGZO, and ITZO films

    SciTech Connect

    Makise, Kazumasa; Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju; Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  20. Local environment of iron in heavy ion-irradiated amorphous magnetic oxides by Moessbauer and x-ray absorption spectroscopy

    SciTech Connect

    Studer, F.; Houpert Ch. ); Toulemonde, M. ) Dartyge E. )

    1991-04-01

    Moessbauer and X-ray absorption spectroscopies of some crystallized iron oxides, Fe{sub 2}O{sub 3}, FePO{sub 4}, Fe{sub 3}PO{sub 7}, and SrMn{sub 1.85}Fe{sub 0.15}O{sub 2.5}, the garnet Y{sub 3}Fe{sub 5}O{sub 12}, and the barium hexaferrite BaFe{sub 12}O{sub 19} have been undertaken in order to look at the local order around iron in Y{sub 3}Fe{sub 5}O{sub 12} and BaFe{sub 12}O{sub 19} materials amorphized by irradiation with high energy (27 MeV/n) xenon ions accelerated by GANIL. Simulations of the Moessbauer spectra suggested the presence of fivefold coordinated iron in the amorphous irradiated compounds with a distribution of magnetic interactions due to the variations of the number of iron second neighbors. The XANES spectra at the Fe-K edge confirmed the fivefold coordination of iron in the amorphous ferrites, show that the local structure around iron appears to be similar although the original structures were different, and appear close to the one observed in the Fe{sub 3}PO{sub 7} compound in which iron stands in a trigonal bipyramidal environment.

  1. Physico-chemical studies of cuprous oxide (Cu2O) nanoparticles coated on amorphous carbon nanotubes (α-CNTs)

    NASA Astrophysics Data System (ADS)

    Johan, Mohd Rafie; Meriam Suhaimy, Syazwan Hanani; Yusof, Yusliza

    2014-01-01

    Amorphous carbon nanotubes (α-CNTs) were synthesized by a chemical reaction between ferrocene and ammonium chloride at a temperature (∼250 °C) in an air furnace. As- synthesized α-CNTs were purified with deionized water and hydrochloric acid. A purified α-CNTs were hybridized with cuprous oxide nanoparticles (Cu2O) through a simple chemical process. Morphology of the samples was analyzed with field emission scanning electron microscope (FESEM) and transmission electron microscopy (TEM). Fourier transform infrared (FTIR) spectra showed the attachment of acidic functional groups onto the surface of α-CNTs and the formation of hybridized α-CNTs-Cu2O. Raman spectra reveal the amorphous nature of the carbon. X-ray diffraction (XRD) pattern confirmed the amorphous phase of the carbon and the formation of Cu2O crystalline phase. The coating of Cu2O was confirmed by FESEM, TEM, and XRD. Optical absorption of the samples has also been investigated and the quantum confinement effect was illustrated in the absorption spectra.

  2. Electromechanical properties of amorphous indium–gallium–zinc-oxide transistors structured with an island configuration on plastic

    NASA Astrophysics Data System (ADS)

    Park, Chang Bum; Na, Hyung Il; Yoo, Soon Sung; Park, Kwon-Shik

    2016-03-01

    A comparative study of the electromechanical properties was carried out on a low-temperature-processed amorphous indium–gallium–zinc-oxide thin-film transistor, particularly with regard to the structural design of the device under the stress accumulation of an outward bending surface. Shown herein is the reliable electromechanical integrity of island-structured devices against the mechanical strain at bending radii of mm order. The onset of crack strain also closely corresponded to the electrical failure of the stressed device. These results revealed that the island configuration on the bending surface effectively suppresses the stress accumulation on sheets composed of inorganic stacked layers in a uniaxial direction.

  3. Dispersion and interaction of graphene oxide in amorphous and semi-crystalline nano-composites: a PALS study

    NASA Astrophysics Data System (ADS)

    Maurer, Frans H. J.; Arza, Carlos R.

    2015-06-01

    The influence of dispersion and interaction of Graphene Oxide (GO) in semicrystalline Polyhydroxy butyrate (PHB) and glassy amorphous Poly(tBP-oda) is explored by Positron Annihilation Lifetime Spectroscopy (PALS). The ortho-Positronium lifetimes which represent the main free volume hole size of both polymers are mainly affected by the large differences in internal stresses built up by the shrinkage of the polymers during their preparation, restricted by the platelet structure of GO. The ortho-Positronium intensities, which represent the ortho-Positronium formation probabilities, suggest a strong dependency of on the dispersion of the nano-particles and their aspect ratio.

  4. Detection of Amorphous Silica in Air-Oxidized Ti[subscript 3]SiC[subscript 2] at 500?1000C by NMR and SIMS

    SciTech Connect

    Pang, Wei Kong; Low, I.M.; Hanna, J.V.

    2010-11-12

    The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti{sub 3}SiC{sub 2} oxidised at 500-1000 C is described. The formation of an amorphous SiO{sub 2} layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti{sub 3}SiC{sub 2} at {le}1000 C.

  5. Amorphous iron-(hydr) oxide networks at liquid/vapor interfaces: In situ X-ray scattering and spectroscopy studies

    SciTech Connect

    Wang, W.; Pleasants, J.; Bu, W.; Park, R.Y.; Kuzmenko, I.; Vaknin, D.

    2012-06-23

    Surface sensitive X-ray reflectivity (XR), fluorescence (XF), and grazing incidence X-ray diffraction (GIXD) experiments were conducted to determine the accumulation of ferric iron Fe (III) or ferrous iron Fe (II) under dihexadecyl phosphate (DHDP) or arachidic acid (AA) Langmuir monolayers at liquid/vapor interfaces. Analysis of the X-ray reflectivity and fluorescence data of monolayers on the aqueous subphases containing FeCl3 indicates remarkably high levels of surface-bound Fe (III) in number of Fe3 ions per molecule (DHDP or AA) that exceed the amount necessary to neutralize a hypothetically completely deprotonated monolayer (DHDP or AA). These results suggest that nano-scale iron (hydr) oxide complexes (oxides, hydroxides or oxyhydroxides) bind to the headgroups and effectively overcompensate the maximum possible charges at the interface. The lack of evidence of in-plane ordering in GIXD measurements and strong effects on the surface-pressure versus molecular area isotherms indicate that an amorphous network of iron (hydr) oxide complexes contiguous to the headgroups is formed. Similar experiments with FeCl2 generally resulted with the oxidation of Fe (II)Fe (III) which consequently leads to ferric Fe (III) complexes binding albeit with less iron at the interface. Controlling the oxidation of Fe (II) changes the nature and amount of binding significantly. The implications to biomineralization of iron (hydr) oxides are briefly discussed.

  6. Preparation and properties of amorphous titania-coated zinc oxide nanoparticles

    SciTech Connect

    Liao Minhung . E-mail: liaomh@mail.tit.edu.tw; Hsu, C.-H.; Chen, D.-H. . E-mail: chendh@mail.ncku.edu.tw

    2006-07-15

    Amorphous TiO{sub 2}-coated ZnO nanoparticles were prepared by the solvothermal synthesis of ZnO nanoparticles in ethanol and the followed by sol-gel coating of TiO{sub 2} nanolayer. The analyses of X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed that the resultant ZnO nanoparticles were hexagonal with a wurtzite structure and a mean diameter of about 60 nm. Also, after TiO{sub 2} coating, the TEM images clearly indicated the darker ZnO nanoparticles being surrounded by the lighter amorphous TiO{sub 2} layers. The zeta potential analysis revealed the pH dependence of zeta potentials for ZnO nanoparticles shifted completely to that for TiO{sub 2} nanoparticles after TiO{sub 2} coating, confirming the formation of core-shell structure and suggesting the coating of TiO{sub 2} was achieved via the adhesion of the hydrolyzed species Ti-O{sup -} to the positively charged surface of ZnO nanoparticles. Furthermore, the analyses of Fourier transform infrared (FTIR) and Raman spectra were also conducted to confirm that amorphous TiO{sub 2} were indeed coated on the surface of ZnO nanoparticles. In addition, the analyses of ultraviolet-visible (UV-VIS) and photoluminescence (PL) spectra revealed that the absorbance of amorphous TiO{sub 2}-coated ZnO nanoparticles at 375 nm gradually decreased with an increase in the Ti/Zn molar ratio and the time for TiO{sub 2} coating, and the emission intensity of ZnO cores could be significantly enhanced by the amorphous TiO{sub 2} shell. - Graphical abstract: Amorphous titania-coated ZnO nanoparticles with a core-shell structure were prepared. It was found that the emission intensity of ZnO cores could be significantly enhanced by the amorphous TiO{sub 2} shell.

  7. Good electrical and mechanical properties induced by the multilayer graphene oxide sheets incorporated to amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Zhang, Junyan; Yu, Yuanlie; Huang, Deming

    2010-07-01

    Multilayer graphene oxide nanosheets were fabricated using commercially available expanded graphite by simple ultrasonic treatment and then were incorporated into the amorphous carbon matrix as fillers by electrochemical deposition. The electrical conductivity of the films was strongly improved due to the contribution of the multilayer graphene oxide sheets. Moreover, the Young's modulus, hardness and elastic recovery of the composite films were measured to be about 171.1 GPa, 10.1 GPa and 81.4%, respectively, compared to 137.4 GPa, 5.1 GPa and 44.3% of undoped a-C:H films prepared at the same conditions. Additionally, the friction coefficient was tested to be 0.15 (0.5 N, 2 Hz) and the antiwear life was prolonged to about 200 s while the undoped DLC films obtained at the same condition were easy to be frazzled.

  8. Photoresist-Free Fully Self-Patterned Transparent Amorphous Oxide Thin-Film Transistors Obtained by Sol-Gel Process

    NASA Astrophysics Data System (ADS)

    Lim, Hyun Soo; Rim, You Seung; Kim, Hyun Jae

    2014-04-01

    We demonstrated self-patterned solution-processed amorphous oxide semiconductor thin-film transistors (TFTs) using photosensitive sol-gels. The photosensitive sol-gels were synthesized by adding ?-diketone compounds, i.e., benzoylacetone and acetylacetone, to sol-gels. The chemically modified photosensitive sol-gels showed a high optical absorption at specific wavelengths due to the formation of metal chelate bonds. Photoreactions of the modified solutions enabled a photoresist-free process. Moreover, Zn-Sn-O with a high Sn ratio, which is hard to wet-etch using conventional photolithography due to its chemical durability, was easily patterned via the self-patterning process. Finally, we fabricated a solution-processed oxide TFT that included fully self-patterned electrodes and an active layer.

  9. Amorphous TiO2-coated reduced graphene oxide hybrid nanostructures for polymer composites with low dielectric loss

    NASA Astrophysics Data System (ADS)

    Tong, Wangshu; Zhang, Yihe; Yu, Li; Lv, Fengzhu; Liu, Leipeng; Zhang, Qian; An, Qi

    2015-10-01

    Nanocomposite of poly(vinylidene fluoride-co-hexafluoropropylene) incorporated with titanium dioxide-modified reduced graphene oxide sheets (rGO-TiO2/PVDF-HFP) was prepared by in situ assembling TiO2 on graphene oxide (GO), and its dielectric properties were carefully characterized. The GO layers were completely coated with amorphous TiO2. The dielectric permittivity increased stably as rGO-TiO2 content increased, and the loss was low at low frequencies. TiO2 inter-layer acted as an inter-particle barrier to prevent direct contact of rGO, which provided a new simple way for tuning the dielectric properties of polymer composites with low dielectric loss by controlling the structure of fillers.

  10. Amorphous Indium-Zinc-Oxide Transparent Conductors for Thin Film PV: Preprint

    SciTech Connect

    Perkins, J.; Gennett, T.; Galante, M.; Gillaspie, D.; Ginley, D.

    2011-07-01

    Amorphous InZnO's (a-IZO) basic PV applicability has now been demonstrated in prototype CIGS, Si Heterojunction (SiHJ) and organic photovoltaics (OPV). However, to move beyond initial demonstration devices, improved TCO properties and processibility of the a-IZO films are needed. Here, RF-superimposed DC sputtering was used to improve the reliable deposition of a-IZO with conductivity > 3000 S/cm.

  11. Amorphous Indium-Zinc-Oxide Transparent Conductors for Thin Film PV

    SciTech Connect

    Perkins, J.; Gennett, T.; Galante, M.; Gillaspie, D.; Ginley, D.

    2011-01-01

    Amorphous InZnO's (a-IZO) basic PV applicability has now been demonstrated in prototype CIGS, Si Heterojunction (SiHJ) and organic photovoltaics (OPV). However, to move beyond initial demonstration devices, improved TCO properties and processibility of the a-IZO films are needed. Here, RF-superimposed DC sputtering was used to improve the reliable deposition of a-IZO with conductivity {sigma} >; 3000 S/cm.

  12. Wireless thin film transistor based on micro magnetic induction coupling antenna

    NASA Astrophysics Data System (ADS)

    Jun, Byoung Ok; Lee, Gwang Jun; Kang, Jong Gu; Kim, Seunguk; Choi, Ji-Woong; Cha, Seung Nam; Sohn, Jung Inn; Jang, Jae Eun

    2015-12-01

    A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the ‘internet of things’ (IoT).

  13. Wireless thin film transistor based on micro magnetic induction coupling antenna.

    PubMed

    Jun, Byoung Ok; Lee, Gwang Jun; Kang, Jong Gu; Kim, Seunguk; Choi, Ji-Woong; Cha, Seung Nam; Sohn, Jung Inn; Jang, Jae Eun

    2015-01-01

    A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the 'internet of things' (IoT). PMID:26691929

  14. Wireless thin film transistor based on micro magnetic induction coupling antenna

    PubMed Central

    Jun, Byoung Ok; Lee, Gwang Jun; Kang, Jong Gu; Kim, Seunguk; Choi, Ji-Woong; Cha, Seung Nam; Sohn, Jung Inn; Jang, Jae Eun

    2015-01-01

    A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the ‘internet of things’ (IoT). PMID:26691929

  15. Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded oxygen-vacancy active layer.

    PubMed

    Park, Ji Hoon; Kim, Yeong-Gyu; Yoon, Seokhyun; Hong, Seonghwan; Kim, Hyun Jae

    2014-12-10

    We proposed a simple method to deposit a vertically graded oxygen-vacancy active layer (VGA) to enhance the positive bias stress (PBS) stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). We deposited a-IGZO films by sputtering (target composition; In2O3:Ga2O3:ZnO = 1:1:1 mol %), and the oxygen partial pressure was varied during deposition so that the front channel of the TFTs was fabricated with low oxygen partial pressure and the back channel with high oxygen partial pressure. Using this method, we were able to control the oxygen vacancy concentration of the active layer so that it varied with depth. As a result, the turn-on voltage shift following a 10 000 s PBS of optimized VGA TFT was drastically improved from 12.0 to 5.6 V compared with a conventional a-IGZO TFT, without a significant decrease in the field effect mobility. These results came from the self-passivation effect and decrease in oxygen-vacancy-related trap sites of the VGA TFTs. PMID:25402628

  16. High mobility bottom gate InGaZnO thin film transistors with SiO{sub x} etch stopper

    SciTech Connect

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-05-21

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiO{sub x} layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W/L=10 {mu}m/50 {mu}m) fabricated on glass exhibited a high field-effect mobility of 35.8 cm{sup 2}/V s, a subthreshold gate swing value of 0.59 V/decade, a thrseshold voltage of 5.9 V, and an I{sub on/off} ratio of 4.9x10{sup 6}, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

  17. Microstructure development and hydrogen gas interaction of oxidized Zr65Pd35 and Zr60Pd35Ce5 amorphous alloys

    NASA Astrophysics Data System (ADS)

    Ozawa, Masakuni; Kato, Shiro; Kobayashi, Katsutoshi; Yogo, Toshinobu; Yamamura, Shin-ichi

    2016-01-01

    The microstructure of composites derived from amorphous Zr65Pd35 and Zr65Pd35Ce5 alloys was studied. X-ray diffractograms, Raman spectroscopy profiles and scanning electron micrographs indicated that the mixtures containing ZrO2, metallic Pd, and PdO were formed for both amorphous alloys after heat treatment in air. The amorphous Zr60Pd35Ce5 alloy at temperatures of 280400 C changed to the composites in which very small Pd precipitates with a diameter less than 100 nm were embedded in a ZrO2 matrix. The hydrogen-temperature-programmed reduction was applied to study the reactivity of hydrogen gas with the oxidized Zr60Pd35Ce5 material. A rapid hydrogen absorption and release behavior was observed on the composite derived from the amorphous alloy.

  18. Control and characterization of the structural, electrical, and optical properties of amorphous zinc-indium-tin oxide thin films.

    PubMed

    Buchholz, D Bruce; Liu, Jun; Marks, Tobin J; Zhang, Ming; Chang, Robert P H

    2009-10-01

    Zinc-indium-tin oxide (ZITO) films are grown by pulsed-laser deposition in which 30% of the indium in the In(2)O(3) structure is replaced by substitution with zinc and tin in equal molar proportions: In(2-2x)Zn(x)Sn(x)O(3), where x = 0.3. Films grown at 25 and 100 degrees C exhibit electron diffraction patterns (EDPs) typical of amorphous materials. At a deposition temperature of 200 degrees C, evidence of crystallinity begins to appear in the EDP data and becomes more evident in films deposited at 400 degrees C. The advent of crystallinity affects the electrical properties of the ZITO film, and the effect is ascribed to the boundaries between phases in the films. The electrical and optical properties of the amorphous ZITO films grown at 25 degrees C are dependent on the oxygen partial pressure (P(O(2))) during film growth, transitioning from a high-mobility (36 cm(2)/V x s) conductor (sigma approximately 1700 S/cm) at P(O(2)) = 5 mTorr to a high-mobility semiconductor at P(O(2)) approximately 20 mTorr. Field-effect transistors (FETs) prepared with as-deposited amorphous ZITO channel layers on p(+)-Si/300 nm SiO(2) substrates yield FETs with on/off ratios of 10(6), off currents of 10(-8) A, and field-effect saturation mobilities of 10 cm(2)/V x s. PMID:20355848

  19. Crystallization behavior of amorphous indium–gallium–zinc-oxide films and its effects on thin-film transistor performance

    NASA Astrophysics Data System (ADS)

    Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2016-03-01

    Amorphous indium–gallium–zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300–1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700–1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current–gate voltage (Id–Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

  20. Magnesium-Aluminum-Zirconium Oxide Amorphous Ternary Composite: A Dense and Stable Optical Coating

    NASA Technical Reports Server (NTRS)

    Sahoo, N. K.; Shapiro, A. P.

    1998-01-01

    In the present work, the process parameter dependent optical and structural properties of MgO-Al(2)O(3)-ZrO(2) ternary mixed-composite material have been investigated. Optical properties were derived from spectrophotometric measurements. The surface morphology, grain size distributions, crystallographic phases and process dependent material composition of films have been investigated through the use of Atomic Force Microscopy (AFM), X-ray diffraction analysis and Energy Dispersive X- ray (EDX) analysis. EDX analysis made evident the correlation between the optical constants and the process dependent compositions in the films. It is possible to achieve environmentally stable amorphous films with high packing density under certain optimized process conditions.

  1. Low-temperature synthetic route based on the amorphous nature of giant species for preparation of lower valence oxides

    NASA Astrophysics Data System (ADS)

    Eda, Kazuo; Kunotani, Fumiko; Uchiyama, Noriki

    2005-05-01

    We examined low-temperature synthetic route based on the amorphous nature of giant species to succeed to prepare Cs blue bronze (Cs 0.3MoO 3), which has never obtained by usual high-temperature methods, at ca. 680 K. Solid solutions (K 1-xRb x) 0.28MoO 3 and (Li 1-xNa x) 0.9Mo 6O 17 were also obtained at lower temperatures (ca. 670 K). For the latter system consisting of non-isostructural end members, Li 0.9Mo 6O 17-structure type solid solution was formed even when 0.25oxides Ln2Mo 3O 9 ( Ln=La, Gd) were obtained, but not as single phases.

  2. Oxidative stress, inflammation, and DNA damage in multiple organs of mice acutely exposed to amorphous silica nanoparticles

    PubMed Central

    Nemmar, Abderrahim; Yuvaraju, Priya; Beegam, Sumaya; Yasin, Javed; Kazzam, Elsadig E; Ali, Badreldin H

    2016-01-01

    The use of amorphous silica (SiO2) in biopharmaceutical and industrial fields can lead to human exposure by injection, skin penetration, ingestion, or inhalation. However, the in vivo acute toxicity of amorphous SiO2 nanoparticles (SiNPs) on multiple organs and the mechanisms underlying these effects are not well understood. Presently, we investigated the acute (24 hours) effects of intraperitoneally administered 50 nm SiNPs (0.25 mg/kg) on systemic toxicity, oxidative stress, inflammation, and DNA damage in the lung, heart, liver, kidney, and brain of mice. Lipid peroxidation was significantly increased by SiNPs in the lung, liver, kidney, and brain, but was not changed in the heart. Similarly, superoxide dismutase and catalase activities were significantly affected by SiNPs in all organs studied. While the concentration of tumor necrosis factor α was insignificantly increased in the liver and brain, its increase was statistically significant in the lung, heart, and kidney. SiNPs induced a significant elevation in pulmonary and renal interleukin 6 and interleukin-1 beta in the lung, liver, and brain. Moreover, SiNPs caused a significant increase in DNA damage, assessed by comet assay, in all the organs studied. SiNPs caused leukocytosis and increased the plasma activities of lactate dehydrogenase, creatine kinase, alanine aminotranferase, and aspartate aminotransferase. These results indicate that acute systemic exposure to SiNPs causes oxidative stress, inflammation, and DNA damage in several major organs, and highlight the need for thorough evaluation of SiNPs before they can be safely used in human beings.

  3. Optical absorption and small-polaron hopping in oxygen deficient and lithium-ion-intercalated amorphous titanium oxide films

    NASA Astrophysics Data System (ADS)

    Triana, C. A.; Granqvist, C. G.; Niklasson, G. A.

    2016-01-01

    Optical absorption in oxygen-deficient and Li+-ion inserted titanium oxide films was studied in the framework of small-polaron hopping. Non-stoichiometric TiOy films with 1.68 ≤ y ≤ 2.00 were deposited by reactive DC magnetron sputtering and were subjected to electrochemical intercalation of Li+-ions and charge-balancing electrons to obtain LixTiOy films with 0.12 ≤ x ≤ 0.34. Dispersion analysis was applied to calculate the complex dielectric function ɛ(ℏω) ≡ ɛ1(ℏω) + i ɛ2(ℏω) from numerical inversion of optical transmittance and reflectance spectra; a superposition of Tauc-Lorentz and Lorentz oscillator models was used for this purpose. Data on ɛ2(ℏω) were employed to calculate the optical conductivity and fit this property to a small-polaron model for disordered systems with strong electron-phonon interaction and involving transitions near the Fermi level. The introduction of oxygen vacancies and/or Li+ insertion yielded band gap widening by ˜0.20-0.35 eV, and both processes induced similar low-energy optical absorption. The small-polaron-based analysis indicated increases in the Fermi level by ˜0.15-0.3 eV for sub-stoichiometric and/or Li+-inserted films. This suggests the existence of polaronic Ti3+ states in the lower part of the conduction band arising from transfer of electrons from oxygen vacancies and/or inserted Li+ species. The present article is a sequel to an earlier paper on oxygen-deficient and/or Li+-inserted amorphous WOy thin films and forms part of a comprehensive investigation of optical absorption in amorphous transition metal oxides with different valence states of the metallic ions.

  4. Comparison of amorphous iridium water-oxidation electrocatalysts prepared from soluble precursors.

    PubMed

    Blakemore, James D; Schley, Nathan D; Kushner-Lenhoff, Maxwell N; Winter, Andrew M; D'Souza, Francis; Crabtree, Robert H; Brudvig, Gary W

    2012-07-16

    Electrodeposition of iridium oxide layers from soluble precursors provides a route to active thin-layer electrocatalysts for use on water-oxidizing anodes. Certain organometallic half-sandwich aqua complexes of iridium form stable and highly active oxide films upon electrochemical oxidation in aqueous solution. The catalyst films appear as blue layers on the anode when sufficiently thick, and most closely resemble hydrous iridium(III,IV) oxide by voltammetry. The deposition rate and cyclic voltammetric response of the electrodeposited material depend on whether the precursor complex contains a pentamethylcyclopentadieneyl (Cp*) or cyclopentadienyl ligand (Cp), and do not match, in either case, iridium oxide anodes prepared from non-organometallic precursors. Here, we survey our organometallic precursors, iridium hydroxide, and pre-formed iridium oxide nanoparticles. From electrochemical quartz crystal nanobalance (EQCN) studies, we find differences in the rate of electrodeposition of catalyst layers from the two half-sandwich precursors; however, the resulting layers operate as water-oxidizing anodes with indistinguishable overpotentials and H/D isotope effects. Furthermore, using the mass data collected by EQCN and not otherwise available, we show that the electrodeposited materials are excellent catalysts for the water-oxidation reaction, showing maximum turnover frequencies greater than 0.5 mol O(2) (mol iridium)(-1) s(-1) and quantitative conversion of current to product dioxygen. Importantly, these anodes maintain their high activity and robustness at very low iridium loadings. Our organometallic precursors contrast with pre-formed iridium oxide nanoparticles, which form an unstable electrodeposited material that is not stably adherent to the anode surface at even moderately oxidizing potentials. PMID:22725667

  5. Effects of calcium and phosphate on uranium(IV) oxidation: Comparison between nanoparticulate uraninite and amorphous UIV-phosphate

    NASA Astrophysics Data System (ADS)

    Latta, Drew E.; Kemner, Kenneth M.; Mishra, Bhoopesh; Boyanov, Maxim I.

    2016-02-01

    The mobility of uranium in subsurface environments depends strongly on its redox state, with UIV phases being significantly less soluble than UVI minerals. This study compares the oxidation kinetics and mechanisms of two potential products of UVI reduction in natural systems, a nanoparticulate UO2 phase and an amorphous UIV-Ca-PO4 analog to ningyoite (CaUIV(PO4)2·1-2H2O). The valence of U was tracked by X-ray absorption near-edge spectroscopy (XANES), showing similar oxidation rate constants for UIVO2 and UIV-phosphate in solutions equilibrated with atmospheric O2 and CO2 at pH 7.0 (kobs,UO2 = 0.17 ± 0.075 h-1 vs. kobs,UIVPO4 = 0.30 ± 0.25 h-1). Addition of up to 400 μM Ca and PO4 decreased the oxidation rate constant by an order of magnitude for both UO2 and UIV-phosphate. The intermediates and products of oxidation were tracked by electron microscopy, powder X-ray diffraction (pXRD), and extended X-ray absorption fine-structure spectroscopy (EXAFS). In the absence of Ca or PO4, the product of UO2 oxidation is Na-uranyl oxyhydroxide (under environmentally relevant concentrations of sodium, 15 mM NaClO4 and low carbonate concentration), resulting in low concentrations of dissolved UVI (<2.5 × 10-7 M). Oxidation of UIV-phosphate produced a Na-autunite phase (Na2(UO2)PO4·xH2O), resulting in similarly low dissolved U concentrations (<7.3 × 10-8 M). When Ca and PO4 are present in the solution, the EXAFS data and the solubility of the UVI phase resulting from oxidation of UO2 and UIV-phosphate are consistent with the precipitation of Na-autunite. Bicarbonate extractions and Ca K-edge X-ray absorption spectroscopy of oxidized solids indicate the formation of a Ca-UVI-PO4 layer on the UO2 surface and suggest a passivation layer mechanism for the decreased rate of UO2 oxidation in the presence of Ca and PO4. Interestingly, the extractions were unable to remove all of the oxidized U from partially oxidized UO2 solids, suggesting that oxidized U is distributed between the interior of the UO2 nanoparticles and the labile surface layer. Accounting for the entire pool of oxidized U by XANES is the likely reason for the higher UO2 oxidation rate constants determined here relative to prior studies. Our results suggest that the natural presence or addition of Ca and PO4 in groundwater could slow the rates of UIV oxidation, but that the rates are still fast enough to cause complete oxidation of UIV within days under fully oxygenated conditions.

  6. High mechanical endurance RRAM based on amorphous gadolinium oxide for flexible nonvolatile memory application

    NASA Astrophysics Data System (ADS)

    Zhao, Hongbin; Tu, Hailing; Wei, Feng; Shi, Zhitian; Xiong, Yuhua; Zhang, Yan; Du, Jun

    2015-05-01

    In this paper, we use amorphous Gd2O3 as the switching layer for fabricated RRAM devices with novel high performance, excellent flexibility, and mechanical endurance properties as potential candidate memory for flexible electronics applications. The obtained Cu/Gd2O3/Pt devices on flexible polyethylene terephthalate (PET) substrates show bipolar switching characteristics, low voltage operation (<2 V) and long retention time (>106 s). No performance degradation occurs, and the stored information is not lost after the device has been bent to different angles and up to 104 times in the bending tests. Based on temperature-dependent switching characteristics, the formation of Cu conducting filaments stemming from electrochemical reactions is believed to be the reason for the resistance switching from a high resistance state to a low resistance state. The studies of the integrated experiment and mechanism lay the foundation for the development of high-performance flexible RRAM.

  7. Highly conductive p-type amorphous oxides from low-temperature solution processing

    SciTech Connect

    Li Jinwang; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

    2012-09-24

    We report solution-processed, highly conductive (resistivity 1.3-3.8 m{Omega} cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 Degree-Sign C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E{sub VBM} = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.

  8. Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O

    SciTech Connect

    Ide, Keisuke; Hiramatsu, Hidenori; Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo

    2012-04-01

    Amorphous In-Ga-Zn-O (a-IGZO) is expected as a backplane transistor material to drive next-generation flat-panel and flexible displays. It has been elucidated that thermal annealing even at low temperatures <200 deg. C reduces deep subgap defects and those at {>=}300 deg. C further improve device characteristics, stability, and uniformity. These temperatures are much lower than the reported crystallization temperature (T{sub X}{approx} 600 deg. C). In this work, we investigate effects of thermal annealing on the structural and optical properties of a-IGZO thin films. We performed classical molecular dynamics simulation (CMD) and optical interference analyses including spectroscopic ellipsometry (SE). CMD reproduced the x-ray diffraction pattern of a-IGZO and exhibited a glass transition. Experimentally, it was found that T{sub X} depends largely on deposition methods and conditions, probably due to different chemical compositions. Sputter-deposited a-IGZO films exhibited onset T{sub X}{approx} 600 deg. C and crystalline volume fraction X{sub C} increased linearly from 600 deg. C. 1.2% of film densification occurred even at 600 deg. C due to crystallization. High-temperature in situ SE measurements did not detect a symptom of a glass transition temperature (T{sub g}) presumably because the T{sub X} is close to T{sub g} similar to the case of amorphous metals.

  9. Amorphous vanadium oxide matrixes supporting hierarchical porous Fe3O4/graphene nanowires as a high-rate lithium storage anode.

    PubMed

    An, Qinyou; Lv, Fan; Liu, Qiuqi; Han, Chunhua; Zhao, Kangning; Sheng, Jinzhi; Wei, Qiulong; Yan, Mengyu; Mai, Liqiang

    2014-11-12

    Developing electrode materials with both high energy and power densities holds the key for satisfying the urgent demand of energy storage worldwide. In order to realize the fast and efficient transport of ions/electrons and the stable structure during the charge/discharge process, hierarchical porous Fe3O4/graphene nanowires supported by amorphous vanadium oxide matrixes have been rationally synthesized through a facile phase separation process. The porous structure is directly in situ constructed from the FeVO4·1.1H2O@graphene nanowires along with the crystallization of Fe3O4 and the amorphization of vanadium oxide without using any hard templates. The hierarchical porous Fe3O4/VOx/graphene nanowires exhibit a high Coulombic efficiency and outstanding reversible specific capacity (1146 mAh g(-1)). Even at the high current density of 5 A g(-1), the porous nanowires maintain a reversible capacity of ∼500 mAh g(-1). Moreover, the amorphization and conversion reactions between Fe and Fe3O4 of the hierarchical porous Fe3O4/VOx/graphene nanowires were also investigated by in situ X-ray diffraction and X-ray photoelectron spectroscopy. Our work demonstrates that the amorphous vanadium oxides matrixes supporting hierarchical porous Fe3O4/graphene nanowires are one of the most attractive anodes in energy storage applications. PMID:25314630

  10. Oxidation behavior of amorphous metallic Ni{sub 3}(SbTe{sub 3}){sub 2} compound

    SciTech Connect

    Jun, Jong-Ho; Jung, Jin-Seung . E-mail: jjscm@kangnung.ac.kr; Oh, Seung-Lim; Kim, Yong-Rok; Lee, Sung-Han; O'Connor, Charles J.

    2006-03-09

    Amorphous Ni{sub 3}(SbTe{sub 3}){sub 2} compound was prepared from a metathesis between Zintl phase K{sub 3}SbTe{sub 3} and NiBr{sub 2} in solution and its oxidation behavior was investigated in the temperature range of 200-700 deg. C in air. To characterize the sample, thermogravimetry (TG), X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive analysis by X-ray (EDAX) analyses were performed and electrical conductivity was measured as a function of temperature in the range of 25-800 deg. C in air. The specimen showed a metallic conducting-like behavior below 585 deg. C while a semiconducting-like behavior above 585 deg. C. At a first oxidation step of Ni{sub 3}(SbTe{sub 3}){sub 2} below 500 deg. C, TeO{sub 2} phase is formed. Above 500 deg. C, NiO phase is formed, then some NiO reacts with TeO{sub 2} to form NiTeO{sub 3} and NiSb{sub 2}O{sub 6} is simultaneously formed. Above 700 deg. C, NiTeO{sub 3} is further reacted with TeO{sub 2} to form NiTe{sub 2}O{sub 5}. Both NiTeO{sub 3} and NiTe{sub 2}O{sub 5} are decomposed above 774 deg. C.

  11. Oxyanion induced variations in domain structure for amorphous cobalt oxide oxygen evolving catalysts, resolved by X-ray pair distribution function analysis.

    PubMed

    Kwon, Gihan; Kokhan, Oleksandr; Han, Ali; Chapman, Karena W; Chupas, Peter J; Du, Pingwu; Tiede, David M

    2015-12-01

    Amorphous thin film oxygen evolving catalysts, OECs, of first-row transition metals show promise to serve as self-assembling photoanode materials in solar-driven, photoelectrochemical `artificial leaf' devices. This report demonstrates the ability to use high-energy X-ray scattering and atomic pair distribution function analysis, PDF, to resolve structure in amorphous metal oxide catalyst films. The analysis is applied here to resolve domain structure differences induced by oxyanion substitution during the electrochemical assembly of amorphous cobalt oxide catalyst films, Co-OEC. PDF patterns for Co-OEC films formed using phosphate, Pi, methylphosphate, MPi, and borate, Bi, electrolyte buffers show that the resulting domains vary in size following the sequence Pi < MPi < Bi. The increases in domain size for CoMPi and CoBi were found to be correlated with increases in the contributions from bilayer and trilayer stacked domains having structures intermediate between those of the LiCoOO and CoO(OH) mineral forms. The lattice structures and offset stacking of adjacent layers in the partially stacked CoMPi and CoBi domains were best matched to those in the LiCoOO layered structure. The results demonstrate the ability of PDF analysis to elucidate features of domain size, structure, defect content and mesoscale organization for amorphous metal oxide catalysts that are not readily accessed by other X-ray techniques. PDF structure analysis is shown to provide a way to characterize domain structures in different forms of amorphous oxide catalysts, and hence provide an opportunity to investigate correlations between domain structure and catalytic activity. PMID:26634728

  12. Oxyanion induced variations in domain structure for amorphous cobalt oxide oxygen evolving catalysts, resolved by X-ray pair distribution function analysis

    PubMed Central

    Kwon, Gihan; Kokhan, Oleksandr; Han, Ali; Chapman, Karena W.; Chupas, Peter J.; Du, Pingwu; Tiede, David M.

    2015-01-01

    Amorphous thin film oxygen evolving catalysts, OECs, of first-row transition metals show promise to serve as self-assembling photoanode materials in solar-driven, photoelectrochemical ‘artificial leaf’ devices. This report demonstrates the ability to use high-energy X-ray scattering and atomic pair distribution function analysis, PDF, to resolve structure in amorphous metal oxide catalyst films. The analysis is applied here to resolve domain structure differences induced by oxyanion substitution during the electrochemical assembly of amorphous cobalt oxide catalyst films, Co-OEC. PDF patterns for Co-OEC films formed using phosphate, Pi, methylphosphate, MPi, and borate, Bi, electrolyte buffers show that the resulting domains vary in size following the sequence Pi < MPi < Bi. The increases in domain size for CoMPi and CoBi were found to be correlated with increases in the contributions from bilayer and trilayer stacked domains having structures intermediate between those of the LiCoOO and CoO(OH) mineral forms. The lattice structures and offset stacking of adjacent layers in the partially stacked CoMPi and CoBi domains were best matched to those in the LiCoOO layered structure. The results demonstrate the ability of PDF analysis to elucidate features of domain size, structure, defect content and mesoscale organization for amorphous metal oxide catalysts that are not readily accessed by other X-ray techniques. PDF structure analysis is shown to provide a way to characterize domain structures in different forms of amorphous oxide catalysts, and hence provide an opportunity to investigate correlations between domain structure and catalytic activity. PMID:26634728

  13. Generalized molybdenum oxide surface chemical state XPS determination via informed amorphous sample model

    NASA Astrophysics Data System (ADS)

    Baltrusaitis, Jonas; Mendoza-Sanchez, Beatriz; Fernandez, Vincent; Veenstra, Rick; Dukstiene, Nijole; Roberts, Adam; Fairley, Neal

    2015-01-01

    Accurate elemental oxidation state determination for the outer surface of a complex material is of crucial importance in many science and engineering disciplines, including chemistry, fundamental and applied surface science, catalysis, semiconductors and many others. X-ray photoelectron spectroscopy (XPS) is the primary tool used for this purpose. The spectral data obtained, however, is often very complex and can be subject to incorrect interpretation. Unlike traditional XPS spectra fitting procedures using purely synthetic spectral components, here we develop and present an XPS data processing method based on vector analysis that allows creating XPS spectral components by incorporating key information, obtained experimentally. XPS spectral data, obtained from series of molybdenum oxide samples with varying oxidation states and degree of crystallinity, were processed using this method and the corresponding oxidation states present, as well as their relative distribution was elucidated. It was shown that monitoring the evolution of the chemistry and crystal structure of a molybdenum oxide sample due to an invasive X-ray probe could be used to infer solutions to complex spectral envelopes.

  14. Photochromism of amorphous molybdenum oxide films with different initial Mo5+ relative concentrations

    NASA Astrophysics Data System (ADS)

    Rouhani, Mehdi; Foo, Yong L.; Hobley, Jonathan; Pan, Jisheng; Subramanian, Gomathy Sandhya; Yu, Xiaojiang; Rusydi, Andrivo; Gorelik, Sergey

    2013-05-01

    We report the effect of deposition conditions on the intrinsic color and photochromic properties of amorphous MoO3 thin films (a-films) deposited by R.F. unbalanced magnetron sputtering. Optical transmission spectroscopy was used to measure optical properties of the films. The conversion between Mo6+ and Mo5+ for as-deposited and UV irradiated films was characterized using XPS. Raman spectroscopy was used to confirm that the results of XPS were consistent with the bulk of the films. It is shown that absorption coefficient of as-deposited films increases with Mo5+ content. The temporal evolution of absorption coefficients for all films under UV light irradiation is measured using optical transmission spectroscopy. The largest change in absorption was observed for the film with the highest initial Mo5+ content. The temporal evolution of absorption coefficients for all the films shows initial fast rise within first minute of irradiation. XPS and Raman results show that for all films Mo5+ content increases as a result of UV irradiation except for the film with the highest initial Mo5+ content, for which the Mo5+ content decreases relative to Mo6+ despite the fact that the absorption of the film continues to rise. Further understanding of this mechanism is important since it will lead to enhanced photochromism and extend the photo-colorability of the films beyond the point at which the conversion of Mo6+ to Mo5+ is saturated.

  15. Strain-induced transformation of amorphous spherical precipitates into platelets: Application to oxide particles in silicon

    SciTech Connect

    Voronkov, V. V.; Falster, R.

    2001-06-01

    The spherical shape of an amorphous precipitate becomes unstable if the combination P{sup 2}R of precipitate radius R and pressure P exceeds some critical value. This critical value was found to be about 4.44 G{sigma}, where G is the matrix shear modulus and {sigma} is the specific energy of the precipitate/matrix interface. Once this instability criterion is fulfilled, the initially spherical particle will reduce the total free energy (the sum of strain energy and the surface energy) by becoming a thin oblate spheroid (effectively, a platelet). The actual pressure P in the course of oxygen precipitation in silicon is controlled by a high self-interstitial supersaturation caused by emission of self-interstitials by growing precipitates. The duration of annealing necessary to reach the stage of collapse of spheres into platelets is calculated as a function of temperature and the precipitate density. Calculated results are compatible with the experimentally observed annealing conditions for platelet formation. Another important example of sphere to platelet transformation is microdefect formation in vacancy-type silicon. In this case a large negative value of P is sufficient to induce collapse. {copyright} 2001 American Institute of Physics.

  16. Phase separations of amorphous CoW films during oxidation and reactions with Si and Al

    SciTech Connect

    Wang, S.Q.; Mayer, J.W.

    1989-03-01

    Reactions of thin Co/sub 55/ W/sub 45/ films in contact with Si(100) substrates and aluminum overlayers annealed in vacuum in the temperature ranges of 625--700 /sup 0/C and 500--600 /sup 0/C, respectively, and of thin Co/sub 55/W/sub 45/ films in air from 500 to 600 /sup 0/C were investigated by Rutherford backscattering spectrometry, glancing angle x-ray diffraction, and scanning electron microscope techniques. CoW alloy films were amorphous and have a crystallization temperature of 850 /sup 0/C on SiO/sub 2/ substrates. The compound formed is Co/sub 7/ W/sub 6/. Phase separations were found in all the reactions. A layer of cobalt compounds (CoSi/sub 2/ in Si/CoW, Co/sub 2/ Al/sub 9/ in CoW/Al, and Co/sub 3/ O/sub 4/ in CoW with air) was found to form at the reaction interfaces. In addition, a layer of mainly tungsten compounds (WSi/sub 2/ in Si/CoW, WAl/sub 12/ in CoW/Al, and WO/sub 3/ in CoW with air) was found next to cobalt compound layers, but further away from the reaction interfaces. The reactions started at temperatures comparable to those required for the formation of corresponding tungsten compounds.

  17. Resistive Switching Behavior in Amorphous Aluminum Oxide Film Grown by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Quan, Xiao-Tong; Zhu, Hui-Chao; Cai, Hai-Tao; Zhang, Jia-Qi; Wang, Xiao-Jiao

    2014-07-01

    The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metal-organic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin films are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and ultraviolet-visible-infrared spectroscopy, respectively. The electronic character of Ag/Al2O3/ITO structure is tested by an Agilent B1500A. The device shows a typical bipolar resistive switching behavior under the dc voltage sweep mode at room temperature. The variation ratio between HRS and LRS is larger than nearly three orders of magnitude, which indicates the good potential of this structure in future resistive random access memory (ReRAM) applications. Based on the conductive filament model, the high electric field is considered the main reason for the resistive switching according to our measurements.

  18. Light induced instability mechanism in amorphous InGaZn oxide semiconductors

    SciTech Connect

    Robertson, John; Guo, Yuzheng

    2014-04-21

    A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation.

  19. In situ X-Ray Absorption Spectro-Electrochemical Study of Amorphous Tin-Based Composite Oxide Material

    SciTech Connect

    Mansour, A. N.; Mukerjee, S.; Yang, X. Q.; McBreen, J.

    1998-11-01

    We have measured the XAFS spectra of a sample of tin-based composite oxide (TCO) material with a nominal composition of Sn{sub 1.0}B{sub 0.56}P{sub 0.40}Al{sub 0.42}O{sub 3.47} during the discharge and charge cycles in an ''in situ'' configuration. Our results confirm the amorphous nature of TCO and show that Sn in TCO is coordinated with 3 oxygen atoms at a distance of 2.12 {angstrom}. Upon discharging, initially, Li interacts with the electrochemically active Sn-O center forming metallic Sn in the form of clusters containing just a few atoms. Upon further discharge, Li alloys with Sn forming initially highly dispersed forms of Li{sub 2}Sn{sub 5} and/or LiSn and then Li{sub 7}Sn{sub 3}, Li{sub 5}Sn{sub 2}, Li{sub 13}Sn{sub 5}, or Li{sub 7}Sn{sub 2}. The true nature of the formed alloys could be significantly different from that of the corresponding crystalline phases. Upon charging, metallic Sn is produced with a Sn-Sn distance intermediate to those of gray and white Sn.

  20. Effect of Ta addition of co-sputtered amorphous tantalum indium zinc oxide thin film transistors with bias stability.

    PubMed

    Son, Dae-Ho; Kim, Dae-Hwan; Park, Si-Nae; Sung, Shi-Joon; Kang, Jin-Kyu

    2014-11-01

    In this work, we have fabricated thin film transistors (TFTs) using amorphous tantalum indium zinc oxide (a-TaInZnO) channels by the co-sputtering process. The effects of incorporating tantalum on the InZnO material were investigated using Hall-effect measurement results, and electrical characteristics. We also found that the carrier densities of thin films and the transistor on-off currents were greatly influenced by the composition of tantalum addition. Ta ions have strong affinity to oxygen and so suppress the formation of free electron carriers inthin films; they play an important role in enhancing the electrical characteristic due to their high oxygen bonding ability. The electrical characteristics of the optimized TFTs shows a field effect mobility of 3.67 cm2 V(-1) s(-1), a threshold voltage of 1.28 V, an on/off ratio of 1.1 x 10(8), and a subthreshold swing of 480 mV/dec. Under gate bias stress conditions, the TaInZnO TFTs showed lower shift in threshold voltage shifts. PMID:25958492

  1. Creation and control of two-dimensional electron gas using Al-based amorphous oxides/SrTiO₃ heterostructures grown by atomic layer deposition.

    PubMed

    Lee, Sang Woon; Liu, Yiqun; Heo, Jaeyeong; Gordon, Roy G

    2012-09-12

    The formation of a two-dimensional electron gas (2-DEG) using SrTiO(3) (STO)-based heterostructures provides promising opportunities in oxide electronics. We realized the formation of 2-DEG using several amorphous layers grown by the atomic layer deposition (ALD) technique at 300 °C which is a process compatible with mass production and thereby can provide the realization of potential applications. We found that the amorphous LaAlO(3) (LAO) layer grown by the ALD process can generate 2-DEG (∼1 × 10(13)/cm(2)) with an electron mobility of 4-5 cm(2)/V·s. A much higher electron mobility was observed at lower temperatures. More remarkably, amorphous YAlO(3) (YAO) and Al(2)O(3) layers, which are not polar-perovskite-structured oxides, can create 2-DEG as well. 2-DEG was created by means of the important role of trimethylaluminum, Me(3)Al, as a reducing agent for STO during LAO and YAO ALD as well as the Al(2)O(3) ALD process at 300 °C. The deposited oxide layer also plays an essential role as a catalyst that enables Me(3)Al to reduce the STO. The electrons were localized very near to the STO surface, and the source of carriers was explained based on the oxygen vacancies generated in the STO substrate. PMID:22908907

  2. Characteristics of hollow microtubes consisting of amorphous iron oxide nanoparticles produced by iron oxidizing bacteria, Leptothrix ochracea

    NASA Astrophysics Data System (ADS)

    Hashimoto, H.; Yokoyama, S.; Asaoka, H.; Kusano, Y.; Ikeda, Y.; Seno, M.; Takada, J.; Fujii, T.; Nakanishi, M.; Murakami, R.

    2007-03-01

    Some features of characteristic iron oxide sheaths which the iron oxidizing bacteria Leptothrix ochracea ( L. oceracea) formed were studied in order to make clear their morphology microstructure, chemical composition, and crystal structure through scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDX), and X-ray diffraction (XRD). Each sheath was a hollow tube with average outer and inner diameters of 1.1 and 1.4 ?m, respectively. Their length ranged from 10 to 200 ?m and the aspect ratio was 10-200. Each sheath was constructed by very small particles with a diameter of less than 100 nm. The hollow sheaths were mainly composed of Fe and O with small amounts of Si and P. The chemical composition analyzed by EDX was roughly Fe:Si:P=80:15:5 with the exception of O. XRD measurement revealed that crystal structures of the sheath were similar to that of 2-line ferrihydrite. The sheath showed spin-glass-like magnetic properties.

  3. Effects of ionic liquids on cation dynamics in amorphous polyethylene oxide electrolytes

    SciTech Connect

    Chattoraj, Joyjit Diddens, Diddo; Heuer, Andreas

    2014-01-14

    We perform extensive molecular dynamics simulations of a poly(ethylene oxide)-based polymer electrolyte material containing lithium bis(trifluoromethanesulfonyl)imide salt for a wide temperature regime above and below the experimental crystallization temperature with and without N-methyl-N-propylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquid (IL). The impact of the IL-concentration on the cation dynamics is studied. The increase of the cation mobility upon addition of IL is significant but temperature-independent. This can be related to distinct variations of the underlying transport properties as expressed within the previously introduced transport model of polymer electrolytes. Even for the largest IL concentration the transport model perfectly predicts the non-trivial time-dependence of the cationic mean square displacement for all temperatures. Finally, we compare our numerical and theoretical findings with the results of recent nuclear magnetic resonance experiments. In this way we can exclusively relate the strong experimentally observed dependence of the low-temperature Li-diffusivity on the IL concentration to the impact of IL on crystallization.

  4. Effects of ionic liquids on cation dynamics in amorphous polyethylene oxide electrolytes

    NASA Astrophysics Data System (ADS)

    Chattoraj, Joyjit; Diddens, Diddo; Heuer, Andreas

    2014-01-01

    We perform extensive molecular dynamics simulations of a poly(ethylene oxide)-based polymer electrolyte material containing lithium bis(trifluoromethanesulfonyl)imide salt for a wide temperature regime above and below the experimental crystallization temperature with and without N-methyl-N-propylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquid (IL). The impact of the IL-concentration on the cation dynamics is studied. The increase of the cation mobility upon addition of IL is significant but temperature-independent. This can be related to distinct variations of the underlying transport properties as expressed within the previously introduced transport model of polymer electrolytes. Even for the largest IL concentration the transport model perfectly predicts the non-trivial time-dependence of the cationic mean square displacement for all temperatures. Finally, we compare our numerical and theoretical findings with the results of recent nuclear magnetic resonance experiments. In this way we can exclusively relate the strong experimentally observed dependence of the low-temperature Li-diffusivity on the IL concentration to the impact of IL on crystallization.

  5. Amorphous tungstate precursor route to nanostructured tungsten oxide film with electrochromic property.

    PubMed

    Jeon, Ie-Rang; Kang, Joo-Hee; Paek, Seung-Min; Hwang, Seong-Ju; Choy, Jin-Ho

    2011-07-01

    Electrochromic tungsten oxide (WO3) films on ITO glass were fabricated by spin-coating with a tungsten peroxy acid solution, which was prepared by adding an equivolume mixture of hydrogen peroxide and glacial acetic acid to tungsten metal powder. The structural evolution of the tungstate precursor upon heat treatment was studied by X-ray diffraction (XRD) and X-ray absorption near edge structure (XANES) analyses, which indicated that the as-synthesized tungstate transformed into nanocrystalline WO3 upon heating. It is, therefore, quite clear that as-synthesized tungstate can be a good precursor for electrochromic WO3 films. A series of WO3 thin films were prepared on ITO glass by spin-coating with different concentrations of tungsten peroxy acid solution and then post-annealing at various temperatures. Depending on the concentration of the tungstate coating solution (200-500 mg mL(-1)) and the annealing temperature (100-300 degrees C), the thickness and WO3 content as well as the electrochromic properties of WO3 films can be controlled. As a result, the optimum fabrication conditions were determined to be a tungstate solution concentration of 300-400 mg mL(-1) and a post-annealing temperature of 200 degrees C. Finally, an inorganic-inorganic hybrid electrochromic device (ECD) composed of optimized WO3 and Prussian Blue (PB) with desirable coloration efficiency was successfully developed. PMID:22121748

  6. Photo-induced oxidation and amorphization of trigonal tellurium: A means to engineer hybrid nanostructures and explore glass structure under spatial confinement

    NASA Astrophysics Data System (ADS)

    Vasileiadis, Thomas; Yannopoulos, Spyros N.

    2014-09-01

    Controlled photo-induced oxidation and amorphization of elemental trigonal tellurium are achieved by laser irradiation at optical wavelengths. These processes are monitored in situ by time-resolved Raman scattering and ex situ by electron microscopies. Ultrathin TeO2 films form on Te surfaces, as a result of irradiation, with an interface layer of amorphous Te intervening between them. It is shown that irradiation, apart from enabling the controllable transformation of bulk Te to one-dimensional nanostructures, such as Te nanotubes and hybrid core-Te/sheath-TeO2 nanowires, causes also a series of light-driven (athermal) phase transitions involving the crystallization of the amorphous TeO2 layers and its transformation to a multiplicity of crystalline phases including the ?-, ?-, and ?-TeO2 crystalline phases. The kinetics of the above photo-induced processes is investigated by Raman scattering at various laser fluences revealing exponential and non-exponential kinetics at low and high fluence, respectively. In addition, the formation of ultrathin (less than 10 nm) layers of amorphous TeO2 offers the possibility to explore structural transitions in 2D glasses by observing changes in the short- and medium-range structural order induced by spatial confinement.

  7. Photo-induced oxidation and amorphization of trigonal tellurium: A means to engineer hybrid nanostructures and explore glass structure under spatial confinement

    SciTech Connect

    Vasileiadis, Thomas; Yannopoulos, Spyros N.

    2014-09-14

    Controlled photo-induced oxidation and amorphization of elemental trigonal tellurium are achieved by laser irradiation at optical wavelengths. These processes are monitored in situ by time-resolved Raman scattering and ex situ by electron microscopies. Ultrathin TeO₂ films form on Te surfaces, as a result of irradiation, with an interface layer of amorphous Te intervening between them. It is shown that irradiation, apart from enabling the controllable transformation of bulk Te to one-dimensional nanostructures, such as Te nanotubes and hybrid core-Te/sheath-TeO₂ nanowires, causes also a series of light-driven (athermal) phase transitions involving the crystallization of the amorphous TeO₂ layers and its transformation to a multiplicity of crystalline phases including the γ-, β-, and α-TeO₂ crystalline phases. The kinetics of the above photo-induced processes is investigated by Raman scattering at various laser fluences revealing exponential and non-exponential kinetics at low and high fluence, respectively. In addition, the formation of ultrathin (less than 10 nm) layers of amorphous TeO₂ offers the possibility to explore structural transitions in 2D glasses by observing changes in the short- and medium-range structural order induced by spatial confinement.

  8. Amorphous Rover

    NASA Technical Reports Server (NTRS)

    Curtis, Steven A.

    2010-01-01

    A proposed mobile robot, denoted the amorphous rover, would vary its own size and shape in order to traverse terrain by means of rolling and/or slithering action. The amorphous rover was conceived as a robust, lightweight alternative to the wheeled rover-class robotic vehicle heretofore used in exploration of Mars. Unlike a wheeled rover, the amorphous rover would not have a predefined front, back, top, bottom, or sides. Hence, maneuvering of the amorphous rover would be more robust: the amorphous rover would not be vulnerable to overturning, could move backward or sideways as well as forward, and could even narrow itself to squeeze through small openings.

  9. Photoemission spectroscopy of heterojunctions of hydrogenated amorphous silicon with silicon oxide and nitride

    NASA Astrophysics Data System (ADS)

    Yang, L.; Abeles, B.; Eberhardt, W.; Stasiewski, H.; Sondericker, D.

    1989-02-01

    The growth and electronic structure of a-Si:H/a-SiNx:H and a-Si:H/a-SiOx:H heterojunctions have been studied by photoemission spectroscopy. Si 2p core-level photoemission was used to profile the chemical composition microscopically across the interfaces. With the exception of the SiOx-on-Si interface, which due to initial plasma oxidation is graded over ~3 Å, the interfaces are atomically abrupt. The offset energies between the a-Si:H valence-band edge and that of a-SiNx:H and a-SiOx:H, determined by valence-band photoemission, are 1.2 and 4.0 eV, respectively. Based on the fact that the offset energy is independent of a-Si:H layer thickness down to monolayer dimensions, we concluded that hole wave functions in a-Si:H are extremely localized. From the variation of the intensity of the Si-H bonding peak, located at ~7 eV below the Fermi level, as a function of a-Si:H overlayer thickness, we determined that there are ~21015 cm-2 extra H atoms incorporated at the interface region to compensate for the large lattice mismatch at the interface. The invariance of the Si L2,3 absorption edge with a-Si:H overlayer thickness indicates that the range of the core-hole exciton is less than 6 Å. The downward shifts in energy of the absorption edge in ultrathin a-SiNx:H and a-SiOx:H overlayers on a-Si:H are interpreted as optical transitions in which the photoexcited electrons in the insulator overlayer tunnel into the conduction band of a-Si:H.

  10. Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons

    NASA Astrophysics Data System (ADS)

    Fukuhara, Mikio; Sugawara, Kazuyuki

    2014-05-01

    Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100 mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100 mA after 1.8 ks charging at 100 mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800 s (at 1 mHz), which is 157,000 times larger than that (5 ms) in EDLC.

  11. Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons.

    PubMed

    Fukuhara, Mikio; Sugawara, Kazuyuki

    2014-01-01

    Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100mA after 1.8 ks charging at 100mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800s (at 1 mHz), which is 157,000 times larger than that (5ms) in EDLC. PMID:24959106

  12. X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

    SciTech Connect

    Siah, Sin Cheng E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio E-mail: buonassisi@mit.edu; Lee, Sang Woon; Gordon, Roy G.; Heo, Jaeyeong; Shibata, Tomohiro; Segre, Carlo U.

    2014-06-16

    We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.

  13. Widely bandgap tunable amorphous CdGaO oxide semiconductors exhibiting electron mobilities ?10?cm{sup 2?}V{sup ?1?}s{sup ?1}

    SciTech Connect

    Yanagi, Hiroshi; Sato, Chiyuki; Kimura, Yota; Suzuki, Issei; Omata, Takahisa; Kamiya, Toshio; Hosono, Hideo

    2015-02-23

    Amorphous oxide semiconductors exhibit large electron mobilities; however, their bandgaps are either too large for solar cells or too small for deep ultraviolet applications depending on the materials system. Herein, we demonstrate that amorphous CdGaO semiconductors display bandgaps covering the entire 2.54.3?eV region while maintaining large electron mobilities ?10?cm{sup 2?}V{sup ?1?}s{sup ?1}. The band alignment diagram obtained by ultraviolet photoemission spectroscopy and the bandgap values reveal that these semiconductors form type-II heterojunctions with p-type Cu{sub 2}O, which is suitable for solar cells and solar-blind ultraviolet sensors.

  14. Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons

    PubMed Central

    2014-01-01

    Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100 mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100 mA after 1.8 ks charging at 100 mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800 s (at 1 mHz), which is 157,000 times larger than that (5 ms) in EDLC. PMID:24959106

  15. Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics.

    PubMed

    Zhu, Jian; Liu, Xiaolong; Geier, Michael L; McMorrow, Julian J; Jariwala, Deep; Beck, Megan E; Huang, Wei; Marks, Tobin J; Hersam, Mark C

    2016-01-01

    Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm(-2) and low leakage currents down to 6 × 10(-9) A cm(-2) that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors. PMID:26514248

  16. Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing.

    PubMed

    Cheng, C H; Chou, K I; Hsu, H H

    2015-02-01

    We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-? LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Ns and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications. PMID:26353677

  17. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    SciTech Connect

    Mitoma, Nobuhiko E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Kizu, Takio; Lin, Meng-Fang; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Ou-Yang, Wei; Gao, Xu; Fujiwara, Akihiko

    2015-01-26

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

  18. Electron tunnelling into amorphous germanium and silicon.

    NASA Technical Reports Server (NTRS)

    Smith, C. W.; Clark, A. H.

    1972-01-01

    Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

  19. Synthesis of crystalline and amorphous, particle-agglomerated 3-D nanostructures of Al and Si oxides by femtosecond laser and the prediction of these particle sizes

    PubMed Central

    2012-01-01

    We report a single step technique of synthesizing particle-agglomerated, amorphous 3-D nanostructures of Al and Si oxides on powder-fused aluminosilicate ceramic plates and a simple novel method of wafer-foil ablation to fabricate crystalline nanostructures of Al and Si oxides at ambient conditions. We also propose a particle size prediction mechanism to regulate the size of vapor-condensed agglomerated nanoparticles in these structures. Size characterization studies performed on the agglomerated nanoparticles of fabricated 3-D structures showed that the size distributions vary with the fluence-to-threshold ratio. The variation in laser parameters leads to varying plume temperature, pressure, amount of supersaturation, nucleation rate, and the growth rate of particles in the plume. The novel wafer-foil ablation technique could promote the possibilities of fabricating oxide nanostructures with varying Al/Si ratio, and the crystallinity of these structures enhances possible applications. The fabricated nanostructures of Al and Si oxides could have great potentials to be used in the fabrication of low power-consuming complementary metal-oxide-semiconductor circuits and in Mn catalysts to enhance the efficiency of oxidation on ethylbenzene to acetophenone in the super-critical carbon dioxide. PMID:23140103

  20. RF sputtering deposited a-IGZO films for LCD alignment layer application

    NASA Astrophysics Data System (ADS)

    Wu, G. M.; Liu, C. Y.; Sahoo, A. K.

    2015-11-01

    In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage-transmittance (V-T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V-T characteristics suggested higher contrast ratio for LCD display applications.

  1. Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.

    PubMed

    Chen, Haitian; Cao, Yu; Zhang, Jialu; Zhou, Chongwu

    2014-01-01

    Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve large-scale (>1,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates). PMID:24923382

  2. Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors

    NASA Astrophysics Data System (ADS)

    Chen, Haitian; Cao, Yu; Zhang, Jialu; Zhou, Chongwu

    2014-06-01

    Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve large-scale (>1,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates).

  3. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at -17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at -14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  4. Crystalline/amorphous tungsten oxide core/shell hierarchical structures and their synergistic effect for optical modulation.

    PubMed

    Zhou, D; Xie, D; Shi, F; Wang, D H; Ge, X; Xia, X H; Wang, X L; Gu, C D; Tu, J P

    2015-12-15

    High-performance electrochromic films with large color contrast and fast switching speed are of great importance for developing advanced smart windows. In this work, crystalline/amorphous WO3 core/shell (c-WO3@a-WO3) nanowire arrays rationally are synthesized by combining hydrothermal and electrodeposition methods. The 1D c-WO3@a-WO3 core/shell hierarchical structures show a synergistic effect for the enhancement of optical modulation, especially in the infrared (IR) region. By optimizing the electrodeposition time of 400s, the core/shell array exhibits a significant optical modulation (70.3% at 750nm, 42.0% at 2000nm and 51.4% at 10?m), fast switching speed (3.5s and 4.8s), high coloration efficiency (43.2cm(2)C(-1) at 750nm) and excellent cycling performance (68.5% after 3000 cycles). The crystalline/amorphous nanostructured film can provide an alternative way for developing high-performance electrochromic materials. PMID:26321573

  5. Bias tuning charge-releasing leading to negative differential resistance in amorphous gallium oxide/Nb:SrTiO3 heterostructure

    NASA Astrophysics Data System (ADS)

    Wang, P. C.; Li, P. G.; Zhi, Y. S.; Guo, D. Y.; Pan, A. Q.; Zhan, J. M.; Liu, H.; Shen, J. Q.; Tang, W. H.

    2015-12-01

    Negative differential resistance (NDR) and bipolar resistive switching (RS) phenomena were observed in Au/Ga2O3-x/Nb:SrTiO3/Au heterostructures fabricated by growing amorphous gallium oxide thin films on 0.7%Nb-doped SrTiO3 substrates using pulsed laser deposition technique. The RS behavior is reproducible and stable without the forming process. The NDR phenomenon happened during the course of RS from low resistance state to high resistance state and was dependent much on the applied forward bias. The bias dependent charge releasing from oxygen vacancies was considered to contribute to the NDR behavior. The results show that there is a very close relationship between NDR and RS.

  6. Characteristics of micro-quantity Sn addition to amorphous indium-zinc-oxide thin films deposited by using DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kim, Doyeong; Kim, Minje; Song, Pungkeun

    2015-09-01

    Sn-microdoped indium-zinc-oxide (IZO) films were deposited on glass and polyimide (PI) substrates by using DC magnetron sputtering with single targets with Sn concentrations of 0, 800, and 2000 ppm. The films with a thickness of 50 nm were deposited at room temperature (RT) and then post-annealed at different temperatures (RT-220 C) in air or vacuum for 1 h. The 800-ppm Sn-doped IZO films post-annealed at 220 C in vacuum exhibited a relatively low resistivity (3.957 10-4 ?cm) and showed a high transmittance at 550 nm. The transmittance and the resistivity changes induced by post-annealing were similar to those of non-Sn-doped films. Moreover, the mechanical properties were also highly advantageous. Sn-microdoping of amorphous IZO thin films improves their electrical properties and prevents degradation of their mechanical and optical properties at sufficient doping levels.

  7. Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2)

    SciTech Connect

    Liebhaber, M.; Mews, M.; Schulze, T. F.; Korte, L. Rech, B.; Lips, K.

    2015-01-19

    The heterojunction between amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0?4?eV for the a-SiO{sub 2}/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiO{sub x}:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ?E{sub V}. Our method is readily applicable to other heterojunctions.

  8. Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures

    SciTech Connect

    Liu, D.-S.; Lin, T.-W.; Huang, B.-W.; Juang, F.-S.; Lei, P.-H.; Hu, C.-Z.

    2009-04-06

    Amorphous titanium oxide (a-TiO{sub x}:OH) films prepared by plasma-enhanced chemical-vapor deposition at 200 and 25 deg. C are in turn deposited onto the GaN-based light-emitting diode (LED) to enhance the associated light extraction efficiency. The refractive index, porosity, and photocatalytic effect of the deposited films are correlated strongly with the deposition temperatures. The efficiency is enhanced by a factor of {approx}1.31 over that of the uncoated LEDs and exhibited an excellent photocatalytic property after an external UV light irradiation. The increase in the light extraction is related to the reduction in the Fresnel transmission loss and the enhancement of the light scattering into the escape cone by using the graded-refractive-index a-TiO{sub x}:OH film with porous structures.

  9. Reaction pathways of oxide-reduction-diffusion (ORD) synthesis of SmCo5 and in situ study of its hydrogen induced amorphization (HIA)

    NASA Astrophysics Data System (ADS)

    Belener, Kevin L. A.; Kohlmann, Holger

    2014-12-01

    A modified oxide-reduction-diffusion (ORD) method for the synthesis of single-phase SmCo5 is described. Samarium oxide, cobalt and calcium (20% excess) are heated in sealed niobium tubes following an optimized temperature programme. The reaction proceeds via Ca1-xSmxO as an intermediate and yields SmCo5, and CaO, which may be washed off with dilute acetic acid. Single-phase SmCo5 prepared by this route shows an enhanced reactivity towards hydrogen and reacts already at moderate conditions of p(H2)=0.1 MPa and T<770 K. in situ difference scanning calorimetry and X-ray powder diffraction suggest the formation of ternary hydrides SmCo5Hx at temperatures around 473 and 573 K, and disproportionation into cobalt of poor crystallinity and probably an amorphous binary samarium hydride at 700 K, i.e. a hydrogen induced amorphization (HIA) of SmCo5. Neutron powder diffraction was carried out on a 154SmCo5 sample with the high-intensity neutron powder diffractometer D20 at the Institute Laue-Langevin, Grenoble, France. The CaCu5 type crystal structure was confirmed (space group P6/mmm, a=500.60 (2) pm, c=397.01 (2) pm at T=298 (1) K) and the magnetic moments along the crystallographic c axis, ?||c, were refined to be 0.15 (6), 2.02 (6) and 1.75 (5) ?B for Sm, Co1 and Co2 atoms, respectively, in ferromagnetic SmCo5. The HIA process was confirmed by in situ neutron powder diffraction at higher pressures of 8.1 MPa deuterium gas.

  10. An in-situ gas chromatography investigation into the suppression of oxygen gas evolution by coated amorphous cobalt-phosphate nanoparticles on oxide electrode.

    PubMed

    Gim, Jihyeon; Song, Jinju; Kim, Sungjin; Jo, Jeonggeun; Kim, Seokhun; Yoon, Jaegu; Kim, Donghan; Hong, Suk-Gi; Park, Jin-Hwan; Mathew, Vinod; Han, Junhee; Song, Sun-Ju; Kim, Jaekook

    2016-01-01

    The real time detection of quantitative oxygen release from the cathode is performed by in-situ Gas Chromatography as a tool to not only determine the amount of oxygen release from a lithium-ion cell but also to address the safety concerns. This in-situ gas chromatography technique monitoring the gas evolution during electrochemical reaction presents opportunities to clearly understand the effect of surface modification and predict on the cathode stability. The oxide cathode, 0.5Li2MnO3∙0.5LiNi0.4Co0.2Mn0.4O2, surface modified by amorphous cobalt-phosphate nanoparticles (a-CoPO4) is prepared by a simple co-precipitation reaction followed by a mild heat treatment. The presence of a 40 nm thick a-CoPO4 coating layer wrapping the oxide powders is confirmed by electron microscopy. The electrochemical measurements reveal that the a-CoPO4 coated overlithiated layered oxide cathode shows better performances than the pristine counterpart. The enhanced performance of the surface modified oxide is attributed to the uniformly coated Co-P-O layer facilitating the suppression of O2 evolution and offering potential lithium host sites. Further, the formation of a stable SEI layer protecting electrolyte decomposition also contributes to enhanced stabilities with lesser voltage decay. The in-situ gas chromatography technique to study electrode safety offers opportunities to investigate the safety issues of a variety of nanostructured electrodes. PMID:27001370

  11. An in-situ gas chromatography investigation into the suppression of oxygen gas evolution by coated amorphous cobalt-phosphate nanoparticles on oxide electrode

    PubMed Central

    Gim, Jihyeon; Song, Jinju; Kim, Sungjin; Jo, Jeonggeun; Kim, Seokhun; Yoon, Jaegu; Kim, Donghan; Hong, Suk-Gi; Park, Jin-Hwan; Mathew, Vinod; Han, Junhee; Song, Sun-Ju; Kim, Jaekook

    2016-01-01

    The real time detection of quantitative oxygen release from the cathode is performed by in-situ Gas Chromatography as a tool to not only determine the amount of oxygen release from a lithium-ion cell but also to address the safety concerns. This in-situ gas chromatography technique monitoring the gas evolution during electrochemical reaction presents opportunities to clearly understand the effect of surface modification and predict on the cathode stability. The oxide cathode, 0.5Li2MnO3∙0.5LiNi0.4Co0.2Mn0.4O2, surface modified by amorphous cobalt-phosphate nanoparticles (a-CoPO4) is prepared by a simple co-precipitation reaction followed by a mild heat treatment. The presence of a 40 nm thick a-CoPO4 coating layer wrapping the oxide powders is confirmed by electron microscopy. The electrochemical measurements reveal that the a-CoPO4 coated overlithiated layered oxide cathode shows better performances than the pristine counterpart. The enhanced performance of the surface modified oxide is attributed to the uniformly coated Co-P-O layer facilitating the suppression of O2 evolution and offering potential lithium host sites. Further, the formation of a stable SEI layer protecting electrolyte decomposition also contributes to enhanced stabilities with lesser voltage decay. The in-situ gas chromatography technique to study electrode safety offers opportunities to investigate the safety issues of a variety of nanostructured electrodes. PMID:27001370

  12. Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications

    NASA Astrophysics Data System (ADS)

    Alston, Robert; Iyer, Shanthi; Bradley, Tanina; Lewis, Jay; Cunningham, Garry; Forsythe, Eric

    2014-02-01

    Low temperature gallium tin zinc oxide (GSZO) based thin film transistors fabricated on silicon has been investigated as a potential indium free transparent amorphous oxide semiconductor thin film transistor (TAOS TFT) with potential device applications on plastic substrates. A comprehensive and detailed study on the performance of GSZO TFTs has been carried out by studying the effects of processing parameters such as deposition temperature and annealing temperature/duration, as well as the channel thickness with all temperatures held below 150 C. Variety of characterization techniques, namely Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and x-ray reflectivity (XRR) in addition to I-V and C-V measurements were employed to determine the effects of the above parameters on the composition and quality of the channel. Optimized TFT characteristics of ID=310-7 A, ION/OFF =2106, VON ~ -2 V, SS ~ 1 V/dec and ?FE = 0.14 cm2/V s with a ?VON of 3.3 V under 3 hours electrical stress were produced.

  13. Chemical mechanical planarization of amorphous Ge2Sb2Te5 using KClO4 as oxidizer in acidic slurry

    NASA Astrophysics Data System (ADS)

    He, Aodong; Song, Zhitang; Bo, Liu; Zhong, Min; Weili, Liu; Wang, Liangyong; Yan, Weixia; Lei, Yu; Wu, Guangping

    Amorphous Ge2Sb2Te5 (a-GST) chemical mechanical planarization (CMP) using KClO4 as the oxidizer in an acidicslurry is investigated in the present work. It is shown that the removal rate (RR ) of the a-GST firstly increases and thentends to saturate when the KClO4 concentration is greater than 0.8 wt%, but the static etch rate (SER) linearly increasesfrom low to high KClO4 concentration. To understand the oxidation-reaction capability of Ge, Sb and Te, depth profilesof composition of elements and etch morphology of a-GST immersed in the slurry for some time are measured,respectively. It is found that selective corrosion occurs among Ge, Sb and Te, and an accumulation of Te and loss of Gein a-GST surface region are obvious observed, especially at high KClO4 concentrations. Temperature dependent sheetresistance measurements of all the samples pre- and post-CMP reveal a similar trend, which implies a-GST CMP is ableto keep its characteristic well.

  14. Influence of molybdenum source/drain electrode contact resistance in amorphous zinctin-oxide (a-ZTO) thin film transistors

    SciTech Connect

    Han, Dong-Suk; Kang, Yu-Jin; Park, Jae-Hyung; Jeon, Hyung-Tag; Park, Jong-Wan

    2014-10-15

    Highlights: We developed and investigated source/drain electrodes in oxide TFTs. The Mo S/D electrodes showed good output characteristics. Intrinsic TFT parameters were calculated by the transmission line method. - Abstract: This paper investigates the feasibility of a low-resistivity electrode material (Mo) for source/drain (S/D) electrodes in thin film transistors (TFTs). The effective resistances between Mo source/drain electrodes and amorphous zinctin-oxide (a-ZTO) thin film transistors were studied. Intrinsic TFT parameters were calculated by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Mo source/drain electrodes showed good transfer characteristics with a field-effect mobility of 10.23 cm{sup 2}/V s. In spite of slight current crowding effects, the Mo source/drain electrodes showed good output characteristics with a steep rise in the low drain-to-source voltage (V{sub DS}) region.

  15. Amorphic complexity

    NASA Astrophysics Data System (ADS)

    Fuhrmann, G.; Gröger, M.; Jäger, T.

    2016-02-01

    We introduce amorphic complexity as a new topological invariant that measures the complexity of dynamical systems in the regime of zero entropy. Its main purpose is to detect the very onset of disorder in the asymptotic behaviour. For instance, it gives positive value to Denjoy examples on the circle and Sturmian subshifts, while being zero for all isometries and Morse–Smale systems. After discussing basic properties and examples, we show that amorphic complexity and the underlying asymptotic separation numbers can be used to distinguish almost automorphic minimal systems from equicontinuous ones. For symbolic systems, amorphic complexity equals the box dimension of the associated Besicovitch space. In this context, we concentrate on regular Toeplitz flows and give a detailed description of the relation to the scaling behaviour of the densities of the p-skeletons. Finally, we take a look at strange non-chaotic attractors appearing in so-called pinched skew product systems. Continuous-time systems, more general group actions and the application to cut and project quasicrystals will be treated in subsequent work.

  16. Enhancement on photocatalytic activity of an amorphous titanium oxide film with nano-textured surface by selective-fluorination etching process

    SciTech Connect

    Shih, Pin-Chun; Huang, Cheng-Hao; Chen, Tai-Hong; Lai, Li-Wen; Lu, Yi-Shan; Liu, Day-Shan

    2014-04-01

    Highlights: • The amorphous TiO{sub x} film surface was modified via selective fluorination etching process. • The resulting nano-textured surface markedly enriched the specific surface area and surface acidity. • The photocatalytic activity was comparable to an annealed TiO{sub x} film with anatase structure. - Abstract: A selective-fluorination etching process achieved by an UV light pre-irradiation and the subsequently fluorination etching was developed to enhance the photocatalytic activity of a low-temperature deposited amorphous titanium oxide (a-TiO{sub x}) film. Textured surface on the a-TiO{sub x} films formed by this process were investigated using atomic force microscope and field emission scanning electron microscope. Evidence of the fluorine ions introduced into the a-TiO{sub x} films was examined using Fourier transform infrared spectrometry and X-ray photoelectron spectroscopy. The etching thickness of the a-TiO{sub x} film was found to be deeply relevant to the film pre-irradiated by the UV light. An a-TiO{sub x} film with nano-textured surface, which was favorable to enlarge the specific surface area, thus was obtainable from the notable etching selectivity of the film pre-irradiated by UV light through a nano-sized mask. In addition, the surface acidity of the a-TiO{sub x} film was enhanced by the formation of the Ti-F chemical bonds originating from the fluorination etching process, which also was functional to facilitate the production of surface OH free radicals. Accordingly, the resulting fluorinated a-TiO{sub x} film with nano-textured surface performed a quality photocatalytic activity comparable to that of the high-temperature achieved TiO{sub x} film with anatase structures.

  17. Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier

    NASA Astrophysics Data System (ADS)

    Hwang, Ji-Hyun; Kwak, Hyunmin; Kwon, Myeung Hoi

    2014-03-01

    Aluminum-induced crystallization (AIC) of amorphous silicon with an Al2O3 diffusion barrier was investigated for controlling Si crystallization and preventing layer exchange during the annealing process. An Al2O3 layer was deposited between the a-Si and the Al films (a-Si/Al2O3/Al/Glass) and was blasted with an air spray gun with alumina beads to form diffusion channels between the Si and the Al layers. During the annealing process, small grain Si x Al seeds were formed at the channels. Then, the Al2O3 diffusion barrier was restructured to close the channels and prevent further diffusion of Al atoms into the a-Si layer. A polycrystalline Si film with (111), (220) and (311) crystallization peaks in the X-ray diffraction pattern was formed by annealing at 560 °C in a conventional furnace. That film showed a p-type semiconducting behavior with good crystallinity and a large grain size of up to 14.8 µm. No layer conversion occurred between the Si and the Al layers, which had been the fundamental obstacle to the applications in the crystallization of a-Si films by using the AIC method.

  18. Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications

    PubMed Central

    Socratous, Josephine; Banger, Kulbinder K; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

    2015-01-01

    The electronic structure of low temperature, solution-processed indiumzinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm2 V?1 s?1 is achievable after annealing in air above typically 250 C but performance decreases rapidly when annealing temperatures ?200 C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ?200 C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels. PMID:26190964

  19. Amorphous TiO₂ coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation.

    PubMed

    Hu, Shu; Shaner, Matthew R; Beardslee, Joseph A; Lichterman, Michael; Brunschwig, Bruce S; Lewis, Nathan S

    2014-05-30

    Although semiconductors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) have band gaps that make them efficient photoanodes for solar fuel production, these materials are unstable in aqueous media. We show that TiO2 coatings (4 to 143 nanometers thick) grown by atomic layer deposition prevent corrosion, have electronic defects that promote hole conduction, and are sufficiently transparent to reach the light-limited performance of protected semiconductors. In conjunction with a thin layer or islands of Ni oxide electrocatalysts, Si photoanodes exhibited continuous oxidation of 1.0 molar aqueous KOH to O2 for more than 100 hours at photocurrent densities of >30 milliamperes per square centimeter and ~100% Faradaic efficiency. TiO2-coated GaAs and GaP photoelectrodes exhibited photovoltages of 0.81 and 0.59 V and light-limiting photocurrent densities of 14.3 and 3.4 milliamperes per square centimeter, respectively, for water oxidation. PMID:24876492

  20. Comparison of electrorheological performance between urea-coated and graphene oxide-wrapped core-shell structured amorphous TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Dong, Xufeng; Huo, Shuang; Qi, Min

    2016-01-01

    Polar molecules and graphene oxide (GO) have been used as the shell materials to prepare core–shell structured particles with enhanced electrorheological (ER) properties. Nevertheless, few studies compared the ER performance and stability of the suspensions with the two kinds of shell. In this study, urea and GO are used as the shell materials to prepare TiO2/urea and TiO2/GO core–shell particles-based ER fluids, respectively. Particle characterization results indicate the two kinds of core–shell structured particles present little change in size, morphology and crystal structure compared with the bare amorphous TiO2. Some polar groups are distributed on the surface of the two kinds of core–shell structured particles, which is responsible for their improved ER performance with respect to the bare TiO2 particles. The TiO2/GO particles-based ER fluid presents higher yield stress, lower leakage current density, better sedimentation stability but lower ER efficiency than the TiO2/urea particles-based sample. The larger surface area, stronger connection with the bare TiO2 particles, and larger number of polar groups of the GO-coating is the possible reason for the different properties of TiO2/GO particles-based ER fluid compared with the TiO2/urea particles-based sample.

  1. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

    SciTech Connect

    Gerlach, D.; Wilks, R. G.; Wimmer, M.; Felix, R.; Gorgoi, M.; Lips, K.; Rech, B.; Wippler, D.; Mueck, A.; Meier, M.; Huepkes, J.; Lozac'h, M.; Ueda, S.; Sumiya, M.; Yoshikawa, H.; Kobayashi, K.; Baer, M.

    2013-07-08

    The electronic structure of the interface between the boron-doped oxygenated amorphous silicon 'window layer' (a-SiO{sub x}:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon ({mu}c-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 {+-} 0.27) eV and (-3.37 {+-} 0.27) eV, respectively. A lower tunnel junction barrier height at the {mu}c-Si:H(B)/ZnO:Al interface compared to that at the a-SiO{sub x}:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a {mu}c-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

  2. Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2 bilayer passivation under gate bias stress

    NASA Astrophysics Data System (ADS)

    Fan, Ching-Lin; Tseng, Fan-Ping; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Huang, Bohr-Ran

    2016-02-01

    The reliability of amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with Teflon/SiO2 bilayer passivation prepared under positive and negative gate bias stresses (PGBS and NGBS, respectively) was investigated. Heavier electrical degradation was observed under PGBS than under NGBS, indicating that the environmental effects under PGBS are more evident than those under NGBS. The device with bilayer passivation under PGBS shows two-step degradation. The positive threshold voltage shifts during the initial stressing period (before 500 s), owing to the charges trapped in the gate insulator or at the gate insulator/a-IGZO active layer interface. The negative threshold voltage shift accompanies the increase in subthreshold swing (SS) for the continuous stressing period (after 500 s) owing to H2O molecules from ambience diffused within the a-IGZO TFTs. It is believed that Teflon/SiO2 bilayer passivation can effectively improve the reliability of the a-IGZO TFTs without passivation even though the devices are stressed under gate bias.

  3. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

    NASA Astrophysics Data System (ADS)

    Gerlach, D.; Wilks, R. G.; Wippler, D.; Wimmer, M.; Lozac'h, M.; Félix, R.; Mück, A.; Meier, M.; Ueda, S.; Yoshikawa, H.; Gorgoi, M.; Lips, K.; Rech, B.; Sumiya, M.; Hüpkes, J.; Kobayashi, K.; Bär, M.

    2013-07-01

    The electronic structure of the interface between the boron-doped oxygenated amorphous silicon "window layer" (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon (μc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 ± 0.27) eV and (-3.37 ± 0.27) eV, respectively. A lower tunnel junction barrier height at the μc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a μc-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

  4. The pH-dependent long-term stability of an amorphous manganese oxide in smelter-polluted soils: implication for chemical stabilization of metals and metalloids.

    PubMed

    Ettler, Vojt?ch; Tomov, Zde?ka; Komrek, Michael; Mihaljevi?, Martin; ebek, Ond?ej; Michlkov, Zuzana

    2015-04-01

    An amorphous manganese oxide (AMO) and a Pb smelter-polluted agricultural soil amended with the AMO and incubated for 2 and 6 months were subjected to a pH-static leaching procedure (pH 3-8) to verify the chemical stabilization effect on metals and metalloids. The AMO stability in pure water was pH-dependent with the highest Mn release at pH 3 (47% dissolved) and the lowest at pH 8 (0.14% dissolved). Secondary rhodochrosite (MnCO3) was formed at the AMO surfaces at pH>5. The AMO dissolved significantly less after 6 months of incubation. Sequential extraction analysis indicated that "labile" fraction of As, Pb and Sb in soil significantly decreased after AMO amendment. The pH-static experiments indicated that no effect on leaching was observed for Cd and Zn after AMO treatments, whereas the leaching of As, Cu, Pb and Sb decreased down to 20%, 35%, 7% and 11% of the control, respectively. The remediation efficiency was more pronounced under acidic conditions and the time of incubation generally led to increased retention of the targeted contaminants. The AMO was found to be a promising agent for the chemical stabilization of polluted soils. PMID:25600581

  5. Using amorphous manganese oxide for remediation of smelter-polluted soils: a pH-dependent long-term stability study

    NASA Astrophysics Data System (ADS)

    Ettler, Vojtech; Tomasova, Zdenka; Komarek, Michael; Mihaljevic, Martin; Sebek, Ondrej

    2015-04-01

    In soil systems, manganese (Mn) oxides are commonly found to be powerful sorbents of metals and metalloids and are thus potentially useful in soil remediation. A novel amorphous manganese oxide (AMO) and a Pb smelter-polluted agricultural soil amended with the AMO and incubated for 2 and 6 months were subjected to a pH-static leaching procedure (pH = 3 - 8) to verify the chemical stabilization effect on metals and metalloids. The AMO stability in pure water was pH-dependent with the highest Mn release at pH 3 (47% dissolved) and the lowest at pH 8 (0.14% dissolved). Secondary rhodochrosite (MnCO3) was formed at the AMO surfaces at pH > 5. The AMO dissolved significantly less after 6 months of incubation. Sequential extraction analysis indicated that "labile" fraction of As, Pb and Sb in soil significantly decreased after AMO amendment. The pH-static experiments indicated that no effect on leaching was observed for Cd and Zn after AMO treatments, whereas the leaching of As, Cu, Pb and Sb decreased down to 20%, 35%, 7% and 11% of the control, respectively. The remediation efficiency was more pronounced under acidic conditions and the time of incubation generally led to increased retention of the targeted contaminants. The AMO was found to be a promising agent for the chemical stabilization of polluted soils and other in situ applications need to be evaluated. This study was supported by the Czech Science Foundation (GA?R 15-07117S).

  6. Dc Conduction Mechanisms in Amorphous Thin Films of Mixed Oxides In2O3-SnO2 System Deposited by Co-Evaporation

    NASA Astrophysics Data System (ADS)

    Anwar, M.; Siddiqi, S. A.; Ghauri, I. M.

    A discussion of dc conduction mechanisms in thermally co-evaporated amorphous thin films of Al-In2O3-SnO2-Al structure is presented. Composition (in molar %), film thickness, substrate temperature, and post deposition annealing have profound effects on the electrical properties of the films. The effects of temperature on the I-V characteristics and electrical conductivity of Al-In2O3-SnO2-Al structure are also reported. The values of dielectric constants estimated by capacitance measurements suggest that high-field conduction mechanism is predominantly of Poole-Frenkel type. At low temperature and low field the electron hopping process dominates but at higher temperature the conduction takes place by transport in the extended states (free-band conduction). The transition from hopping to free band conduction is due to overlapping of localized levels and the free band. The increase in the formation of ionized donors with increase in temperature during electrical measurements indicates that electronic part of the conductivity is higher than the ionic part. The initial increase in conductivity with increase in Sn content in In2O3 lattice is caused by the Sn atom substitution of In atom, giving out one extra electron. The decrease in electrical conductivity above the critical Sn content (10 mol % SnO2) is caused by the defects formed by Sn atoms, which act as carrier traps rather than electron donors. The increase in electrical conductivity with film thickness is caused by the increase in free carriers density, which is generated by oxygen vacancy acting as two electrons donor. The increase in conductivity with substrate temperature and annealing is due either to the severe deficiency of oxygen, which deteriorates the film properties and reduces the mobility of the carriers or to the diffusion of Sn atoms from interstitial locations into the In cation sites and formation of indium species of lower valence state so that the In3+ oxidation state may be changed to the In2+ oxidation state.

  7. Amorphous metal composites

    DOEpatents

    Byrne, Martin A. (Troy, NY); Lupinski, John H. (Scotia, NY)

    1984-01-01

    An improved amorphous metal composite and process of making the composite. The amorphous metal composite comprises amorphous metal (e.g. iron) and a low molecular weight thermosetting polymer binder. The process comprises placing an amorphous metal in particulate form and a thermosetting polymer binder powder into a container, mixing these materials, and applying heat and pressure to convert the mixture into an amorphous metal composite.

  8. The effect of B{sub 2}O{sub 3} addition on the crystallization of amorphous TiO{sub 2}-ZrO{sub 2} mixed oxide

    SciTech Connect

    Mao Dongsen Lu Guanzhong

    2007-02-15

    The effect of B{sub 2}O{sub 3} addition on the crystallization of amorphous TiO{sub 2}-ZrO{sub 2} mixed oxide was investigated by X-ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG/DTA). TiO{sub 2}-ZrO{sub 2} mixed oxide was prepared by co-precipitation method with aqueous ammonia as the precipitation reagent. Boric acid was used as a source of boria, and boria contents varied from 2 to 20 wt%. The results indicate that the addition of small amount of boria (<8 wt%) hinders the crystallization of amorphous TiO{sub 2}-ZrO{sub 2} into a crystalline ZrTiO{sub 4} compound, while a larger amount of boria ({>=}8 wt%) promotes the crystallization process. FT-IR spectroscopy and {sup 11}B MAS NMR results show that tetrahedral borate species predominate at low boria loading, and trigonal borate species increase with increasing boria loading. Thus it is concluded that highly dispersed tetrahedral BO{sub 4} units delay, while a build-up of trigonal BO{sub 3} promote, the crystallization of amorphous TiO{sub 2}-ZrO{sub 2} to form ZrTiO{sub 4} crystals. - Graphical abstract: The addition of small amount of boria (<8 wt%) hinders the crystallization of amorphous TiO{sub 2}-ZrO{sub 2} into a crystalline ZrTiO{sub 4} compound, while the larger amount of boria ({>=}8 wt%) promotes the crystallization process.

  9. Amorphous Computing

    NASA Astrophysics Data System (ADS)

    Sussman, Gerald

    2002-03-01

    Digital computers have always been constructed to behave as precise arrangements of reliable parts, and our techniques for organizing computations depend upon this precision and reliability. Two emerging technologies, however, are begnning to undercut these assumptions about constructing and programming computers. These technologies -- microfabrication and bioengineering -- will make it possible to assemble systems composed of myriad information- processing units at almost no cost, provided: 1) that not all the units need to work correctly; and 2) that there is no need to manufacture precise geometrical arrangements or interconnection patterns among them. Microelectronic mechanical components are becoming so inexpensive to manufacture that we can anticipate combining logic circuits, microsensors, actuators, and communications devices integrated on the same chip to produce particles that could be mixed with bulk materials, such as paints, gels, and concrete. Imagine coating bridges or buildings with smart paint that can sense and report on traffic and wind loads and monitor structural integrity of the bridge. A smart paint coating on a wall could sense vibrations, monitor the premises for intruders, or cancel noise. Even more striking, there has been such astounding progress in understanding the biochemical mechanisms in individual cells, that it appears we'll be able to harness these mechanisms to construct digital- logic circuits. Imagine a discipline of cellular engineering that could tailor-make biological cells that function as sensors and actuators, as programmable delivery vehicles for pharmaceuticals, as chemical factories for the assembly of nanoscale structures. Fabricating such systems seem to be within our reach, even if it is not yet within our grasp Fabrication, however, is only part of the story. We can envision producing vast quantities of individual computing elements, whether microfabricated particles, engineered cells, or macromolecular computing agents constructed by engineered cells, but we have few ideas for programming them effectively: How can one engineer prespecified, coherent behavior from the cooperation of immense numbers of unreliable parts that are interconnected in unknown, irregular, and time-varying ways? This is the challenge of Amorphous Computing.

  10. Fully transparent and rollable electronics.

    PubMed

    Mativenga, Mallory; Geng, Di; Kim, Byungsoon; Jang, Jin

    2015-01-28

    Major obstacles toward the manufacture of transparent and flexible display screens include the difficulty of finding transparent and flexible semiconductors and electrodes, temperature restrictions of flexible plastic substrates, and bulging or warping of the flexible electronics during processing. Here we report the fabrication and performance of fully transparent and rollable thin-film transistor (TFT) circuits for display applications. The TFTs employ an amorphous indium-gallium-zinc oxide semiconductor (with optical band gap of 3.1 eV) and amorphous indium-zinc oxide transparent conductive electrodes, and are built on 15-?m-thick solution-processed colorless polyimide (CPI), resulting in optical transmittance >70% in the visible range. As the CPI supports processing temperatures >300 C, TFT performance on plastic is similar to that on glass, with typical field-effect mobility, turn-on voltage, and subthreshold voltage swing of 12.7 0.5 cm(2)/Vs, -1.7 0.2 V, and 160 29 mV/dec, respectively. There is no significant degradation after rolling the TFTs 100 times on a cylinder with a radius of 4 mm or when shift registers, each consisting of 40 TFTs, are operated while bent to a radius of 2 mm. For handling purposes, carrier glass is used during fabrication, together with a very thin (?1 nm) solution-processed carbon nanotube (CNT)/graphene oxide (GO) backbone that is first spin-coated on the glass to decrease adhesion of the CPI to the glass; peel strength of the CPI from glass decreases from 0.43 to 0.10 N/cm, which eases the process of detachment performed after device fabrication. Given that the CNT/GO remains embedded under the CPI after detachment, it minimizes wrinkling and decreases the substrate's tensile elongation from 8.0% to 4.6%. Device performance is also stable under electrostatic discharge exposures up to 10 kV, as electrostatic charge can be released via the conducting CNTs. PMID:25526282

  11. Creation of high-refractive-index amorphous titanium oxide thin films from low-fractal-dimension polymeric precursors synthesized by a sol-gel technique with a hydrazine monohydrochloride catalyst.

    PubMed

    Shimizu, Wataru; Nakamura, Satoshi; Sato, Takaaki; Murakami, Yasushi

    2012-08-21

    Amorphous titanium dioxide (TiO(2)) thin films exhibiting high refractive indices (n ≈ 2.1) and high transparency were fabricated by spin-coating titanium oxide liquid precursors having a weakly branched polymeric structure. The precursor solution was prepared from titanium tetra-n-butoxide (TTBO) via the catalytic sol-gel process with hydrazine monohydrochloride used as a salt catalyst, which serves as a conjugate acid-base pair catalyst. Our unique catalytic sol-gel technique accelerated the overall polycondensation reaction of partially hydrolyzed alkoxides, which facilitated the formation of liner polymer-like titanium oxide aggregates having a low fractal dimension of ca. (5)/(3), known as a characteristic of the so-called "expanded polymer chain". Such linear polymeric features are essential to the production of highly dense amorphous TiO(2) thin films; mutual interpenetration of the linear polymeric aggregates avoided the creation of void space that is often generated by the densification of high-fractal-dimension (particle-like) aggregates produced in a conventional sol-gel process. The mesh size of the titanium oxide polymers can be tuned either by water concentration or the reaction time, and the smaller mesh size in the liquid precursor led to a higher n value of the solid thin film, thanks to its higher local electron density. The reaction that required no addition of organic ligand to stabilize titanium alkoxides was advantageous to overcoming issues from organic residues such as coloration. The dense amorphous film structure suppressed light scattering loss owing to its extremely smooth surface and the absence of inhomogeneous grains or particles. Furthermore, the fabrication can be accomplished at a low heating temperature of <80 °C. Indeed, we successfully obtained a transparent film with a high refractive index of n = 2.064 (at λ = 633 nm) on a low-heat-resistance plastic, poly(methyl methacrylate), at 60 °C. The result offers an efficient route to high-refractive-index amorphous TiO(2) films as well as base materials for a wider range of applications. PMID:22817104

  12. Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In-Ga-Zn-O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

    NASA Astrophysics Data System (ADS)

    Nomura, Kenji; Aoki, Takashi; Nakamura, Kiyoshi; Kamiya, Toshio; Nakanishi, Takashi; Hasegawa, Takayuki; Kimura, Mutsumi; Kawase, Takeo; Hirano, Masahiro; Hosono, Hideo

    2010-06-01

    A three-dimensional vertically-stacked flexible integrated circuit is demonstrated based on hybrid complementary inverters made of n-type In-Ga-Zn-O (a-IGZO) amorphous oxide thin-film transistors (TFTs) and p-type poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer TFTs, where all the fabrication processes were performed at temperatures ≤120 °C. Saturation mobilities of the a-IGZO TFT and the F8T2 TFT are ˜3.2 and ˜1.7×10-3 cm2 V-1 s-1, respectively, from which we chose the appropriate dimensions of the TFTs so as to obtain a good balance for the inverter operation. The maximum voltage gain is ˜67, which is better than those reported for organic/oxide hybrid complementary inverters.

  13. Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

    PubMed

    Li, H K; Chen, T P; Hu, S G; Li, X D; Liu, Y; Lee, P S; Wang, X P; Li, H Y; Lo, G Q

    2015-10-19

    Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer. PMID:26480430

  14. Theory of amorphous ices.

    PubMed

    Limmer, David T; Chandler, David

    2014-07-01

    We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens. PMID:24858957

  15. Theory of amorphous ices

    PubMed Central

    Limmer, David T.; Chandler, David

    2014-01-01

    We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens. PMID:24858957

  16. Is simulated amorphous'' silica really amorphous

    SciTech Connect

    Binggeli, N. , PHB Ecublens, 1015 Lausanne ); Chelikowsky, J.R. )

    1994-07-10

    We have carried out extensive molecular dynamics simulations for the pressure induced amorphization of quartz by means of a classical force-field model. In agreement with earlier simulations, we find that a phase transition occurs within the experimental pressure range of the amorphization. However, in contrast to the interpretation of previous simulations, we demonstrate that the new phase is [ital not] amorphous, since the correlation functions for the equilibrated structure can be shown to be consistent with those of a crystalline phase. In addition, two transformations to ordered structures are found to occur sequentially during the simulations. The first transformation is likely to be related to the recently discovered transition of quartz to an intermediate crystalline phase before its amorphization. The second transformation, instead, yields a compact, octahedrally coordinated Si sublattice. The latter may be an artifact of the pair-potential simulation. [copyright] 1994 American Institute of Physics

  17. Uranium incorporation into amorphous silica.

    PubMed

    Massey, Michael S; Lezama-Pacheco, Juan S; Nelson, Joey M; Fendorf, Scott; Maher, Kate

    2014-01-01

    High concentrations of uranium are commonly observed in naturally occurring amorphous silica (including opal) deposits, suggesting that incorporation of U into amorphous silica may represent a natural attenuation mechanism and promising strategy for U remediation. However, the stability of uranium in opaline silicates, determined in part by the binding mechanism for U, is an important factor in its long-term fate. U may bind directly to the opaline silicate matrix, or to materials such as iron (hydr)oxides that are subsequently occluded within the opal. Here, we examine the coordination environment of U within opaline silica to elucidate incorporation mechanisms. Precipitates (with and without ferrihydrite inclusions) were synthesized from U-bearing sodium metasilicate solutions, buffered at pH ? 5.6. Natural and synthetic solids were analyzed with X-ray absorption spectroscopy and a suite of other techniques. In synthetic amorphous silica, U was coordinated by silicate in a double corner-sharing coordination geometry (Si at ? 3.8-3.9 ) and a small amount of uranyl and silicate in a bidentate, mononuclear (edge-sharing) coordination (Si at ? 3.1-3.2 , U at ? 3.8-3.9 ). In iron-bearing synthetic solids, U was adsorbed to iron (hydr)oxide, but the coordination environment also contained silicate in both edge-sharing and corner-sharing coordination. Uranium local coordination in synthetic solids is similar to that of natural U-bearing opals that retain U for millions of years. The stability and extent of U incorporation into opaline and amorphous silica represents a long-term repository for U that may provide an alternative strategy for remediation of U contamination. PMID:24984107

  18. Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

    NASA Astrophysics Data System (ADS)

    Cheong, Heajeong; Ogura, Shintaro; Ushijima, Hirobumi; Yoshida, Manabu; Fukuda, Nobuko; Uemura, Sei

    2015-06-01

    We fabricated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 108 and a field-effect mobility of 0.3 cm2 V-1 s-1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

  19. IGZO thin film transistor biosensors functionalized with ZnO nanorods and antibodies.

    PubMed

    Shen, Yi-Chun; Yang, Chun-Hsu; Chen, Shu-Wen; Wu, Shou-Hao; Yang, Tsung-Lin; Huang, Jian-Jang

    2014-04-15

    We demonstrate a biosensor structure consisting of an IGZO (Indium-Gallium-Zinc-Oxide) TFT (thin film transistor) and an extended sensing pad. The TFT acts as the sensing and readout device, while the sensing pad ensures the isolation of biological solution from the transistor channel layer, and meanwhile increases the sensing area. The biosensor is functionalized by first applying ZnO nanorods to increase the surface area for attracting electrical charges of EGFR (epidermal growth factor receptor) antibodies. The device is able to selectively detect 36.2 fM of EGFR in the total protein solution of 0.1 ng/ml extracted from squamous cell carcinoma (SCC). Furthermore, the conjugation duration of the functionalized device with EGFR can be limited to 3 min, implying that the biosensor has the advantage for real-time detection. PMID:24291267

  20. Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al{sub 2}O{sub 3}/Zn-doped Al{sub 2}O{sub 3}/Al{sub 2}O{sub 3} stacks

    SciTech Connect

    Chen, Sun; Zhang, Wen-Peng; Cui, Xing-Mei; Ding, Shi-Jin Sun, Qing-Qing; Zhang, Wei

    2014-03-10

    We studied how electrical erasing of indium gallium zinc oxide-thin-film-transistor memory was improved by adding concurrent irradiation with monochromatic light (ML). At fixed gate bias, irradiating at wavelengths of ≤500 nm increased the erasing window (ΔV{sub th-e}) significantly: At a gate bias of −20 V and an erasing time of 5 min, ML irradiation at 400 nm increased ΔV{sub th-e} from 0.29 to 3.21 V. ΔV{sub th-e} increased incrementally with gate bias, erasing time, and ML power density, particularly at short ML wavelengths. Analyzing our experimental results, we discuss the underlying erasure mechanisms.

  1. Tritium in amorphous silicon

    SciTech Connect

    Sidhu, L.S.; Kosteski, T.; O`Leary, S.K.; Gaspari, F.; Zukotynski, S.; Kherani, N.P.; Shmadya, W.

    1996-12-31

    Preliminary results on infrared and luminescence measurements of tritium incorporated amorphous silicon are reported. Tritium is an unstable isotope that readily substitutes hydrogen in the amorphous silicon network. Due to its greater mass, bonded tritium is found to introduce new stretching modes in the infrared spectrum. Inelastic collisions between the beta particles, produced as a result of tritium decay, and the amorphous silicon network, results in the generation of excess electron-hole pairs. Radiative recombination of these carriers is observed.

  2. Nanocrystal dispersed amorphous alloys

    NASA Technical Reports Server (NTRS)

    Perepezko, John H. (Inventor); Allen, Donald R. (Inventor); Foley, James C. (Inventor)

    2001-01-01

    Compositions and methods for obtaining nanocrystal dispersed amorphous alloys are described. A composition includes an amorphous matrix forming element (e.g., Al or Fe); at least one transition metal element; and at least one crystallizing agent that is insoluble in the resulting amorphous matrix. During devitrification, the crystallizing agent causes the formation of a high density nanocrystal dispersion. The compositions and methods provide advantages in that materials with superior properties are provided.

  3. Electrochromic Properties of Li+-Intercalated Amorphous Tungsten (aWO3-x) and Titanium (aTiO2-x) Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Triana, C. A.; Granqvist, C. G.; Niklasson, G. A.

    2014-11-01

    We report on electrochromic properties of stoichiometric and oxygen-deficient amorphous films, denoted aWO3-x and aTiO2-x, under Li+-ion-electron inter/deintercalation. Optical characterization of the films in their as-deposited, fully intercalated (dark), and bleached states were performed by in-situ optical transmittance measurements. We explore electrochromism and optical absorption phenomena in the context of oxygen deficiency and nanostructure. Studies by cyclic voltammetry suggest good optical modulation and charge capacity upon Li+-ion-electron inter/deintercalation for almost stoichiometric films.

  4. Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma

    NASA Astrophysics Data System (ADS)

    Han, Jeong Hwan; Lee, Byoung Kook; Jung, Eun Ae; Kim, Hyo-Suk; Kim, Seong Jun; Kim, Chang Gyoun; Chung, Taek-Mo; An, Ki-Seok

    2015-12-01

    Amorphous ZnSnOx (ZTO) films were prepared using plasma-enhanced atomic layer deposition (PEALD) in a temperature range of 100-200 °C. Metal-organic precursors of Sn(dmamp)2 (dmamp = bis(1-dimethylamino-2-methyl-2-propoxide) and diethylzinc were employed as sources of Sn and Zn, respectively, in combination with O2 plasma as a reactant. Sn levels in the ZTO films were controlled by varying the SnO2/ZnO cycle ratio from 0 to 8. According to the growth behaviour of the ZTO film by alternating SnO2 and ZnO PEALD cycles, it was observed that ZnO growth on Sn-rich ZTO film is retarded, whereas SnO2 growth is enhanced on Zn-rich ZTO film. The chemical states of the ZTO films were confirmed by X-ray photoelectron spectroscopy (XPS); the chemical compositions of the ZTO films were characterised by XPS depth profiling. Grazing-angle X-ray diffraction revealed that the PEALD ZTO films possess an amorphous structure, irrespective of Sn levels from 20 to 59 at.%. ZTO films with intermediate Sn at.% exhibited smooth surface morphology compared to binary ZnO and SnO2 films. Additionally, the step coverage of a ZTO film deposited on hole pattern with an aspect ratio of 8 and opening diameter of 110 nm was about 93%, suggesting the realisation of self-limited growth.

  5. Resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method

    NASA Astrophysics Data System (ADS)

    Seong, Tae-Geun; Bum Choi, Kyu; Seo, In-Tae; Oh, Joon-Ho; Won Moon, Ji; Hong, Kwon; Nahm, Sahn

    2012-05-01

    Amorphous Pr0.7Ca0.3MnO3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77% in the visible range with a maximum transparency of 84% at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 105 s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.

  6. Performance enhancement of n-channel inversion type In{sub x}Ga{sub 1-x}As metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

    SciTech Connect

    Sonnet, A. M.; Hinkle, C. L.; Jivani, M. N.; Chapman, R. A.; Pollack, G. P.; Wallace, R. M.; Vogel, E. M.

    2008-09-22

    Significant enhancement in metal-oxide-semiconductor field effect transistor (MOSFET) transport characteristics is achieved with In{sub x}Ga{sub 1-x}As (x=0.53, x=0.20) channel material using ex situ plasma enhanced chemical vapor deposited amorphous Si layer. In{sub x}Ga{sub 1-x}As MOSFETs (L=2 {mu}m, V{sub gs}-V{sub t}=2.0 V) with Si interlayer show a maximum drain current of 290 mA/mm (x=0.53) and 2 {mu}A/mm (x=0.20), which are much higher compared to devices without a Si interlayer. However, charge pumping measurements show a lower average interface state density near the intrinsic Fermi level for devices without the silicon interlayer indicating that a reduction in the midgap interface state density is not responsible for the improved transport characteristics.

  7. Amorphous-Carbon Films

    NASA Technical Reports Server (NTRS)

    Pouch, John J.; Alterovitz, Samuel A.

    1993-01-01

    Report describes structure, preparation, characterization, and applications of films of amorphous-carbon. Amorphous-carbon films potentially useful as masks in x-ray lithography, layers for passivation of high-speed microelectronic circuits, hard films to protect magnetic recording media and optical components from degradation by chemical etching or wear, and radiation detectors.

  8. Testing of flexible InGaZnO-based thin-film transistors under mechanical strain

    NASA Astrophysics Data System (ADS)

    Mnzenrieder, N. S.; Cherenack, K. H.; Trster, G.

    2011-08-01

    Thin-film transistors (TFTs) fabricated on flexible plastic substrates are an integral part of future flexible large-area electronic devices like displays and smart textiles. Devices for such applications require stable electrical performance under electrical stress and also during applied mechanical stress induced by bending of the flexible substrate. Mechanical stress can be tensile or compressive strain depending on whether the TFT is located outside or inside of the bending plane. Especially the impact of compressive bending on TFT performance is hard to measure, because the device is covered with the substrate in this case. We present a method which allows us to continuously measure the electrical performance parameters of amorphous Indium-Gallium-Zinc Oxide (a-IGZO) based TFTs exposed to arbitrary compressive and tensile bending radii. To measure the influence of strain on a TFT it is attached and electrically connected to a flexible carrier foil, which afterwards is fastened to two plates in our bending tester. The bending radius can be adjusted by changing the distance between these plates. Thus it is possible to apply bending radii in the range between a totally flat substrate and ?1 mm, corresponding to a strain of ?3.5%. The tested bottom-gate TFTs are especially designed for use with our bending tester and fabricated on 50 ?m thick flexible Kapton E polyimide substrates. To show the different application areas of our bending method we characterized our TFTs while they are bent to different tensile and compressive bending radii. These measurements show that the field effect mobilities and threshold voltages of the tested a-IGZO TFTs are nearly, but not absolutely, stable under applied strain, compared to the initial values the mobilities shift by ?3.5% in the tensile case and ?-1.5% in the compressive one, at a bending radius of 8 mm. We also measured the influence of repeated bending (2500 cycles over ?70 h), where a shift of the performance parameters can be observed, too. The saturation mobility of the flat device decreases by 4.5%, and the threshold voltage raises 0.1 V. These results show that it is possible to characterize the influence of different kinds of bending on flexible thin-film devices in a very reliable way with one experimental setup.

  9. Osseointegration of bioactive microarc oxidized amorphous phase/TiO2 nanocrystals composited coatings on titanium after implantation into rabbit tibia.

    PubMed

    Zhou, Rui; Wei, Daqing; Yang, Haoyue; Cheng, Su; Feng, Wei; Li, Baoqiang; Wang, Yaming; Jia, Dechang; Zhou, Yu

    2014-05-01

    The amorphous phase/TiO2 nanocrystals (APTN) composited coatings were prepared on Ti implants for biomedical applications. The Ti implants without and with the APTN composited coatings both do not cause any adverse effects after implantation into the rabbit tibia. The osseointegration of Ti implants after covering the APTN coatings is improved pronouncedly, greatly increasing the interface bonding strength between the implants and newly formed bones. In addition, it is interesting that the newly formed bone tissues appear in the micro-pores of the APTN coatings, promoting the interface bonding between the implants and new bones by the mechanical interlock. Moreover, the Ti implant with the APTN coatings formed at higher applied voltage exhibit higher shear strength and displacement during the pushing out experiment probably due to its better osseointegration. PMID:24481533

  10. Hydrogen in amorphous silicon

    SciTech Connect

    Peercy, P. S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH/sub 1/) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon.

  11. Ferromagnetic bulk amorphous alloys

    SciTech Connect

    Inoue, Akihisa; Takeuchi, Akira; Zhang, T.

    1998-07-01

    This article reviews the authors recent results on the development of ferromagnetic bulk amorphous alloys prepared by casting processes. The multicomponent Fe-(Al,Ga)-(P,C,B,Si) alloys are amorphized in the bulk form with diameters up to 2 mm, and the temperature interval of the supercooled liquid region before crystallization is in the range of 50 to 67 K. These bulk amorphous alloys exhibit good soft magnetic properties, i.e., high B{sub s} of 1.1 to 1.2 T, low H{sub c} of 2 to 6 A/m, and high {mu}{sub e} of about 7,000 at 1 kHz. The Nd-Fe-Al and Pr-Fe-Al bulk amorphous alloys are also produced in the diameter range of up to 12 mm by the copper mold casting process and exhibit rather good hard magnetic properties, i.e., B{sub r} of about 0.1 T, high H{sub c} of 300 to 400 kA/m, and rather high (JH){sub max} of 13 to 20 kJ/m{sup 3}. The crystallization causes the disappearance of the hard magnetic properties. Furthermore, the melt-spun Nd-Fe-Al and Pr-Fe-Al alloy ribbons exhibit soft-type magnetic properties. Consequently, the hard magnetic properties are concluded to be obtained only for the bulk amorphous alloys. The Nd- and Pr-based bulk amorphous alloys can be regarded as a new type of clustered amorphous material, and the control of the clustered amorphous structure is expected to enable the appearance of novel functional properties which cannot be obtained for an ordinary amorphous structure.

  12. Chromic Mechanism in Amorphous WO3 Films

    SciTech Connect

    Zhang, J. G.; Benson, D. K.; Tracy, C. E.; Deb, S. K.; Czanderna, A. W.

    1997-06-01

    We propose a new model for the chromic mechanism in amorphous tungsten oxide films (WO3-y .cntdot. nH2O). This model not only explains a variety of seemingly conflicting experimental results reported in the literature that cannot be explained by existing models, it also has practical implications with respect to improving the coloring efficiency and durability of electrochromic devices. According to this model, a typical as-deposited tungsten oxide film has tungsten mainly in W6+ and W4+ states and can be represented as W6+(1-y) W4+(y)O(3-y) .cntdot. nH2O. The proposed chromic mechanism is based on the small polaron transition between the charge-induced W5+ state and the orignial W4+ state insteasd of the W5+ and W6+ states as suggested in previous models. The correlation between the electrochromic and photochromic behavior in amorphous tungsten oxide films is also discussed.

  13. Innovative solid oxide fuel cells based on BaIn0.3Ti0.7O2.85 electrolyte and La2Mo2O9 amorphous reduced phase as anode material

    NASA Astrophysics Data System (ADS)

    Buvat, Gaëtan; Quarez, Eric; Joubert, Olivier

    2016-01-01

    This article presents elaboration of electrolyte-supported solid oxide fuel cells based on the oxide ion conductor BaIn0.3Ti0.7O2.85 (BIT07) as electrolyte, the amorphous reduced phase of La2Mo2O9 (La2Mo2O7-y) as anode which presents a mixed ionic and electronic conduction in low pO2 and La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) as cathode. Electrode materials have been deposited by screen-printing on BIT07 substrate. In order to avoid chemical reactivity between BIT07 and La2Mo2O9, a thin layer of Ce0.9Gd0.1O1.95 (CGO) has been used. Electrochemical performance of the single cell has been characterized by I-V measurements and impedance spectroscopy. Encouraging performance of 40 mW cm-2 at 700 °C is obtained with a thick electrolyte layer. Finally, ageing test of the cell at 700 °C during 800 h has been done with a low rate of performance loss of 4.4 × 10-3% h-1. No degradation of the electrolyte material is reported and stability of the anode material after operating the fuel cell is discussed.

  14. Amorphous diamond films

    DOEpatents

    Falabella, S.

    1998-06-09

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

  15. Amorphous metal alloy

    DOEpatents

    Wang, R.; Merz, M.D.

    1980-04-09

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  16. Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Han, Dong-Suk; Park, Jae-Hyung; Kang, Min-Soo; Shin, So-Ra; Jung, Yeon-Jae; Choi, Duck-Kyun; Park, Jong-Wan

    2015-02-01

    The effect of an Al2O3/TiO2 stacked passivation layer on the performance of amorphous ZnSnO ( a-ZTO) thin-film transistors (TFTs) was investigated by comparing field-effect mobility ( ? FE) and subthreshold swing after passivation layer deposition. The values observed were 4.7 cm2/Vs and 0.64 V/decade, respectively, for uncoated TFTs and 4.6 cm2/Vs and 0.62 V/decade for passivated TFTs. In addition, excellent water vapor transmission was observed for electron beam-irradiated Al2O3/TiO2-passivated poly(ether sulfone) substrates in a humidity test, because the Al2O3/TiO2 passivation layer can enhance the interface properties between Al2O3 and TiO2. To investigate the origin of this enhancement, we performed x-ray photoelectron spectroscopy of both unpassivated and Al2O3/TiO2-passivated TFTs with a-ZTO back-channel layers after Ar annealing.

  17. Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors

    NASA Astrophysics Data System (ADS)

    Deng, Hui-Xiong; Wei, Su-Huai; Li, Shu-Shen; Li, Jingbo; Walsh, Aron

    2013-03-01

    Amorphous semiconductors are known to give rise to greatly reduced conductivity relative to their crystalline counterparts, which makes the recent development of amorphous oxide semiconductors with high electron mobility unexpected. Using first-principles molecular dynamics and electronic structure simulations, we have analyzed the electronic and optical properties of covalent and ionic oxide amorphous semiconductors. We observe that in covalent systems, amorphization introduces deep defect states inside the gap, resulting in a substantial deterioration of electrical conductivity. In contrast, in ionic systems, such as the transparent conducting oxide ZnO, amorphization does not create deep carrier-recombination centers, so the oxides still exhibit good conductivity and visible transparency relative to the crystalline phases. The origin of the conductivity imbalance between covalent and ionic amorphous semiconductors can be explained using a band coupling mechanism.

  18. Small-dose-sensitive X-ray image pixel with HgI2 photoconductor and amorphous oxide thin-film transistor.

    PubMed

    Park, Jae Chul; Jeon, Pyo Jin; Kim, Jin Sung; Im, Seongil

    2015-01-01

    A new X-ray image sensor is demonstrated with an oxide thin-film transistor backplane and HgI2 sensing material. It displays outstanding image quality under a low X-ray exposure and a low electric field. It is promising as a state-of-the-art device to realize highly resolved images at a low X-ray dose for a variety of medical X-ray imaging applications. PMID:24753443

  19. Formation of amorphous materials

    DOEpatents

    Johnson, William L. (Pasadena, CA); Schwarz, Ricardo B. (Westmont, IL)

    1986-01-01

    Metastable amorphous or fine crystalline materials are formed by solid state reactions by diffusion of a metallic component into a solid compound or by diffusion of a gas into an intermetallic compound. The invention can be practiced on layers of metals deposited on an amorphous substrate or by intermixing powders with nucleating seed granules. All that is required is that the diffusion of the first component into the second component be much faster than the self-diffusion of the first component. The method is practiced at a temperature below the temperature at which the amorphous phase transforms into one or more crystalline phases and near or below the temperature at which the ratio of the rate of diffusion of the first component to the rate of self-diffusion is at least 10.sup.4. This anomalous diffusion criteria is found in many binary, tertiary and higher ordered systems of alloys and appears to be found in all alloy systems that form amorphous materials by rapid quenching. The method of the invention can totally convert much larger dimensional materials to amorphous materials in practical periods of several hours or less.

  20. Structural Amorphous Steels

    NASA Astrophysics Data System (ADS)

    Lu, Z. P.; Liu, C. T.; Thompson, J. R.; Porter, W. D.

    2004-06-01

    Recent advancement in bulk metallic glasses, whose properties are usually superior to their crystalline counterparts, has stimulated great interest in fabricating bulk amorphous steels. While a great deal of effort has been devoted to this field, the fabrication of structural amorphous steels with large cross sections has remained an alchemists dream because of the limited glass-forming ability (GFA) of these materials. Here we report the discovery of structural amorphous steels that can be cast into glasses with large cross-section sizes using conventional drop-casting methods. These new steels showed interesting physical, magnetic, and mechanical properties, along with high thermal stability. The underlying mechanisms for the superior GFA of these materials are discussed.

  1. Amorphous Diamond for MEMS

    NASA Astrophysics Data System (ADS)

    Sullivan, J. P.

    2002-03-01

    Pure carbon films can exhibit surprising complexity in structure and properties. Amorphous diamond (tetrahedrally-coordinated amorphous carbon) is an amorphous quasi-two phase mixture of four-fold and three-fold coordinated carbon which is produced by pulsed excimer laser deposition, an energetic deposition process that leads to film growth by sub-surface carbon implantation and the creation of local metastability in carbon bonding. Modest annealing, < 900K, produces significant irreversible strain relaxation which is thermally activated with activation energies ranging from < 1 eV to > 2 eV. During annealing the material remains amorphous, but there is a detectable increase in medium-range order as measured by fluctuation microscopy. The strain relaxation permits the residual strain in the films to be reduced to < 0.00001, which is a critical requirement for the fabrication of microelectromechanical systems (MEMS). Amorphous diamond MEMS have been fabricated in order to evaluate the mechanical properties of this material under tension and flexure, and this has enabled the determination of elastic modulus (800 GPa), tensile strength (8 GPa), and fracture toughness (8 MPa m^1/2). In addition, amorphous diamond MEMS structures have been fabricated to measure internal dissipation and surface adhesion. The high hardness and strength and hydrophobic nature of the surface makes this material particularly suitable for the fabrication of high wear resistance and low stiction MEMS. Sandia is a multiprogram laboratory operated by Sandia Corp., a Lockheed Martin Co., for the U.S. Dept. of Energy under contract DE-AC04-94AL85000.

  2. High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel.

    PubMed

    Park, Jae Chul; Ahn, Seung-Eon; Lee, Ho-Nyeon

    2013-12-11

    High-performance, low-cost amorphous gallium-indium-zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/drain etching and passivation-layer deposition has been a critical issue. To solve this problem, the present work focuses on overall back-channel processes, such as back-channel N2O plasma treatment, SiOx passivation deposition, and final thermal annealing. This work has revealed the dependence of a-GIZO TFT characteristics on the N2O plasma radio-frequency (RF) power and frequency, the SiH4 flow rate in the SiOx deposition process, and the final annealing temperature. On the basis of these results, a high-performance a-GIZO TFT with a field-effect mobility of 35.7 cm(2) V(-1) s(-1), a subthreshold swing of 185 mV dec(-1), a switching ratio exceeding 10(7), and a satisfactory reliability was successfully fabricated. The technology developed in this work can be realized using the existing facilities of active-matrix liquid-crystal display industries. PMID:24221957

  3. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L. (Newark, DE)

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  4. Enhanced photo-Fenton degradation of rhodamine B using graphene oxide-amorphous FePO? as effective and stable heterogeneous catalyst.

    PubMed

    Guo, Sheng; Zhang, Gaoke; Yu, Jimmy C

    2015-06-15

    A series of graphene oxide (GO)-FePO4 composites with different GO weight ratios (2.5%, 5%, 10%, w/w) were prepared using a simple precipitation process and were firstly used as heterogeneous photo-Fenton catalysts. FESEM images prove the loose structure of the 5GO-FePO4 composite. UV-vis analysis demonstrates that the introduction of GO could enhance solar energy utilization of the composites. Under visible light irradiation, the degradation rate of rhodamine B (RhB) by the 5GO-FePO4 composite was 2.87 times more than that by the pure FePO4 in the presence of hydrogen peroxide. The composite was highly effective for the degradation of RhB in a wide pH range of 2.18-10.40 with negligible iron leaching. Moreover, the composite still showed high catalytic activity after six cycles, which makes it a promising heterogeneous catalyst for wastewater treatment. The introduction of GO promotes the photo-Fenton reaction of GO-FePO4 via three roles: offering more active sites, increasing adsorption capacity and accelerating the Fe(3+)/Fe(2+) cycle by improving the utilization of solar energy. Our work may provide new insights for the development of new effective heterogeneous photo-Fenton catalyst. PMID:25768888

  5. Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors.

    PubMed

    Kilian, Daniel; Polster, Sebastian; Vogeler, Isabell; Jank, Michael P M; Frey, Lothar; Peukert, Wolfgang

    2014-08-13

    Indium-zinc oxide (IZO) films were deposited via flame spray pyrolysis (FSP) by pulsewise shooting a Si/SiO2 substrate directly into the combustion area of the flame. Based on UV-vis measurements of thin-films deposited on glass substrates, the optimal deposition parameters with respect to low haze values and film thicknesses of around 100 nm were determined. Thermal annealing of the deposited films at temperatures between 300 and 700 C was carried out and staggered bottom gate thin-film transistors (TFT) were fabricated. The thin films were investigated by scanning electron microscopy, atomic force microscopy, X-ray diffraction, Fourier transformed infrared spectroscopy, and room-temperature photoluminescence measurements. The outcome of these investigations lead to two major requirements in order to implement a working TFT: (i) organic residues from the deposition process need to be removed and (ii) the net free charge carrier concentration has to be minimized by controlling the trap states in the semiconductor. The optimal annealing temperature was 300 C as both requirements are fulfilled best in this case. This leads to field effect transistors with a low hysteresis, a saturation mobility of ?Sat = 0.1 cm(2)/(V s), a threshold voltage of Vth = -18.9 V, and an Ion/Ioff ratio on the order of 10(7). Depending on thermal treatment, the defect density changes significantly strongly influencing the transfer characteristics of the device. PMID:25029269

  6. More Evidence of the Importance of Amorphous Silicates in CM Carbonaceous Chondrites: New Observations from a Fine-Grained Rim in the CM2 Chondrite, TIL 91722

    NASA Astrophysics Data System (ADS)

    Brearley, A. J.; Le Guillou, C.

    2015-07-01

    A fine-grained rim in TIL 91722 contains abundant amorphous silicate material containing nanophase sulfides. Phyllosilicates are rare. The amorphous material has a high ferric iron content indicative of oxidation coupled with hydration.

  7. Endotoxin promotes adverse effects of amorphous silica nanoparticles on lung epithelial cells in vitro.

    PubMed

    Shi, Yongli; Yadav, Santosh; Wang, Feng; Wang, He

    2010-01-01

    Amorphous silica engineered nanoparticles (ENP) are used for drug delivery and food additive under current regulations. Although the adverse effects of amorphous silica ENP may be negligible, contamination by bacterium products may enhance the toxic potential of these so-called safe products. Lipopolysaccharide (LPS), an endotoxin component generated by gram-negative bacteria, is a potential contaminant of amorphous silica ENP due to its ubiquitous presence in the environment. The combined effects of amorphous silica ENP and LPS are therefore of particular concern. In this study, A549 cells were exposed to amorphous silica ENP in combination with LPS for comparison with the cells treated with ENP. Measurements of MTT assay and lactate dehydrogenase (LDH) activity indicated that the toxicity of amorphous silica ENP was low but co-treatment of the cells with LPS significantly enhanced this toxicity. Decreased cell viability and increased LDH activity release occurred earlier and at lower concentration levels in co-treated cells. Co-treatment of LPS with amorphous silica ENP might also enhance the increase in oxidative stress produced by amorphous silica ENP. However, there were no detectable changes in nitric oxide generation and 8-hydroxy-2-deoxy guanosine formation in the cells treated with either ENP or ENP plus LPS, indicating low effect on oxidative DNA damage. These results showed that LPS may enhance the oxidative stress induced by amorphous silica ENP to initiate cytotoxicity of these engineered nanoparticles. PMID:20391117

  8. Amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  9. Amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  10. Interstellar amorphous carbon

    SciTech Connect

    Bussoletti, E.; Colangeli, L.; Orofino, V.

    1987-10-01

    Amorphous carbon grains are discussed as possible candidates for cosmic dust. Particles obtained in the laboratory do not correctly reproduce the portion of the interstellar extinction curve commonly attributed to graphite. Amorphous carbon grains with a 40-A mean radius respect the carbon cosmic abundance constraints; however, they cannot explain the interstellar UV extinction curve because they show a peak at 2350 A and give a contribution which is too high to the visual extinction. The present experimental results have been used to construct an interstellar amorphous carbon (IAC) whose properties are able to resolve the above-mentioned difficulties. Extrapolations of the laboratory data show that a size distribution with a 10-A average radius has an extinction efficiency with the peak at the right position, satisfactorily matching in shape the interstellar hump. The peak to visual extinction ratio, Gamma = 3.8, justifies the existence of other dielectric materials which may account for the observed linear polarization. IAC requires no more than 18 percent of the available carbon to produce the hump. The results are discussed in terms of evolution of carbon grains in space showing that, in this picture, the presence of graphite is no longer necessary to account for most of the solid carbonaceous material. 39 references.

  11. Amorphous Silicon Microbolometer Technology

    NASA Astrophysics Data System (ADS)

    Syllaios, A. J.; Schimert, T. R.; Gooch, R. W.; McCardel, W. L.; Tregilgas, J. H.; Ritchey, B. A.

    2003-10-01

    An emerging application of hydrogenated amorphous silicon (?-Si:H) thin films is in infrared detection and imaging technologies. Amorphous silicon is used for detection of optical radiation from the UV-VIS to the IR spectral range. For detection in the infrared ?-Si:H thin film microbolometer detector structures^1,2 are used. Ultra-thin ( 2000 ?-SiNx:H/?-Si:H/?-SiNx:H membranes with low thermal mass suspended over silicon readout integrated circuits are built using RF plasma enhanced chemical vapor deposition (PECVD) and surface micromachining. The microbolometers form quarter-wave resonant cavity structures to enhance IR absorptance. To ensure high thermal isolation the microbolometer arrays are vacuum packaged using wafer level vacuum packaging. Among the ?-Si:H material properties affecting the design and performance of microbolometer detectors are electrical resistivity and its temperature coefficient, and thermal and mechanical properties. IR cameras with 120x160 ?-Si:H bolometer pixel arrays operating at ambient temperature are now in production. Non-imaging applications are multi-channel detectors for gas sensing. [1] A. J. Syllaios, et al., MRS Symp. Proc. 609, A14.4.1-6(2001). [2] E. Mottin, et al., SPIE Proc. 4369, 250-6(2001).

  12. Amorphous alumina coatings: processing, structure and remarkable barrier properties.

    PubMed

    Samlor, Diane; Lazar, Ana-Maria; Aufray, Malenn; Tendero, Claire; Lacroix, Loc; Bguin, Jean-Denis; Caussat, Brigitte; Vergnes, Hugues; Alexis, Jol; Poquillon, Dominique; Pbre, Nadine; Gleizes, Alain; Vahlas, Constantin

    2011-09-01

    Amorphous aluminium oxide coatings were processed by metalorganic chemical vapour deposition (MOCVD); their structural characteristics were determined as a function of the processing conditions, the process was modelled considering appropriate chemical kinetic schemes, and the properties of the obtained material were investigated and were correlated with the nanostructure of the coatings. With increasing processing temperature in the range 350 degrees C-700 degrees C, subatmospheric MOCVD of alumina from aluminium tri-isopropoxide (ATI) sequentially yields partially hydroxylated amorphous aluminium oxides, amorphous Al2O3 (415 degrees C-650 degrees C) and nanostructured gamma-Al2O3 films. A numerical model for the process allowed reproducing the non uniformity of deposition rate along the substrate zone due to the depletion of ATI. The hardness of the coatings prepared at 350 degrees C, 480 degrees C and 700 degrees C is 6 GPa, 11 GPa and 1 GPa, respectively. Scratch tests on films grown on TA6V titanium alloy reveal adhesive and cohesive failures for the amorphous and nanocrystalline ones, respectively. Alumina coating processed at 480 degrees C on TA6V yielded zero weight gain after oxidation at 600 degrees C in lab air. The surface of such low temperature processed amorphous films is hydrophobic (water contact angle 106 degrees), while the high temperature processed nanocrystalline films are hydrophilic (48 degrees at a deposition temperature of 700 degrees C). It is concluded that amorphous Al2O3 coatings can be used as oxidation and corrosion barriers at ambient or moderate temperature. Nanostructured with Pt or Ag nanoparticles, they can also provide anti-fouling or catalytic surfaces. PMID:22097590

  13. Optical multilayers with an amorphous fluoropolymer

    SciTech Connect

    Chow, R.; Loomis, G.E.; Lindsey, E.F.

    1994-07-01

    Multilayered coatings were made by physical vapor deposition (PVD) of a perfluorinated amorphous polymer, Teflon AF2400, together with other optical materials. A high reflector at 1064 run was made with ZnS and AF2400. An all-organic 1064-nm reflector was made from AF2400 and polyethylene. Oxide (HfO{sub 2}, SiO{sub 2}) compatibility was also tested. Each multilayer system adhered to itself. The multilayers were influenced by coating stress and unintentional temperature rises during PVD deposition.

  14. Molecular dynamics in amorphous ergocalciferol

    NASA Astrophysics Data System (ADS)

    Mohamed, Sahra; Thayyil, M. Shahin; Capaccioli, S.

    2014-04-01

    While developing new pharmaceutical products based on drug substances in their amorphous form, the molecular mobility of amorphous active ingredients have to be characterized in detail. The molecular mobility in the supercooled liquid and glassy states of ergocalciferol is studied using broadband dielectric spectroscopy over wide frequency and temperature ranges. Dielectric studies revealed a number of relaxation process of different molecular origin.

  15. Compensated amorphous silicon solar cell

    DOEpatents

    Carlson, David E. (Yardley, PA)

    1980-01-01

    An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

  16. Amorphous silicon ionizing particle detectors

    DOEpatents

    Street, Robert A. (Palo Alto, CA); Mendez, Victor P. (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  17. Amorphous silicon ionizing particle detectors

    DOEpatents

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  18. Compensated amorphous silicon solar cell

    DOEpatents

    Devaud, Genevieve

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  19. Plasticity of amorphous carbon

    NASA Astrophysics Data System (ADS)

    von Lautz, Julian; Moseler, Michael; Pastewka, Lars

    2014-03-01

    We use molecular dynamics simulations to probe the plastic response of representative bulk volumes of amorphous carbon at densities from 2.0 g cm-3 to 3.3 g cm-3 in simple and triaxial shear. After an initial elastic response the samples yield with only little strain hardening or softening. Individual plastic events in this network forming glass are strikingly similar to those observed for bulk metallic glasses: We find that plasticity is carried by fundamental rearrangements of regions of around 100 atoms, the shear transformation zone. In the simple shear geometry, those events coalesce to form a shear-band on longer time scales. During plastic deformation, the material changes its hybridization by transforming sp3 carbon atoms to sp2. We provide evidence that this transformation of the structural state occurs before the material yields, hence weakening the material. This work was supported by the European Commission (Marie-Curie IOF 272619).

  20. Bulk amorphous materials

    SciTech Connect

    Schwarz, R.B.; Archuleta, J.I.; Sickafus, K.E.

    1998-12-01

    This is the final report for a three-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The objective of this work was to develop the competency for the synthesis of novel bulk amorphous alloys. The authors researched their synthesis methods and alloy properties, including thermal stability, mechanical, and transport properties. The project also addressed the development of vanadium-spinel alloys for structural applications in hostile environments, the measurement of elastic constants and thermal expansion in single-crystal TiAl from 300 to 750 K, the measurement of elastic constants in gallium nitride, and a study of the shock-induced martensitic transformations in NiTi alloys.

  1. Amorphous and Cellular Computing

    NASA Astrophysics Data System (ADS)

    Abelson, Harold; Sussman, Gerald J.; Knight, Thomas F., Jr

    2001-08-01

    The objective of this research is to create the architectural, algorithmic, and technological foundations for exploiting programmable materials. These are materials that incorporate vast numbers of programmable elements that react to each other and to their environment. Such materials can be fabricated economically, provided that the computing elements are amassed in bulk without arranging for precision interconnect and testing. In order to exploit programmable materials we must identify engineering principles for organizing and instructing myriad programmable entities to cooperate to robustly achieve pre-established goals, even though the individual entities are unreliable and interconnected in unknown, irregular, and time-varying ways. Progress in microfabrication and in bioengineering will make it possible to assemble such amorphous systems at almost no cost, provided that (1) the units need not all work correctly; (2) the units are identically programmed; and (3) there is no need to manufacture precise geometrical arrangements of the units or precise interconnections among them.

  2. Stability of n-i-p amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Staebler, D. L.; Crandall, R. S.; Williams, R.

    1981-11-01

    Unencapsulated, amorphous silicon indium tin oxide/n-i-p/stainless-steel solar cells were tested for stability. All cells have excellent shelf life. Changes occur during exposure to light, but can be controlled by the deposition conditions of the amorphous silicon. The changes are due to trapping and recombination of optically generated carriers in the i layer, and are reversibly annealed out above 175 C. Preliminary life tests on two relatively stable cells showed a small initial drop to 5%, followed by a weak logarithmic decay that predicts only about 20% further decrease in efficiency after 20 years in sunlight. Work is continuing on improving the efficiency and stability of these cells.

  3. Optical multilayer films based on an amorphous fluoropolymer

    SciTech Connect

    Chow, R.; Loomis, G.E.; Ward, R.L.

    1996-01-01

    Multilayered coatings were made by physical vapor deposition (PVD) of a perfluorinated amorphous polymer, Teflon AF2400, and with other optical materials. A high reflector for 1064 nm light was made with ZnS and AF2400. An all-organic 1064 nm reflector was made from AF2400 and polyethylene. Oxide (HfO{sub 2} and SiO{sub 2}) compatibility with AF2400 was also tested. The multilayer morphologies were influenced by coating stress and unintentional temperature rises from the PVD process. Analysis by liquid nuclear magnetic resonance of the thin films showed slight compositional variations between the coating and starting materials of perfluorinated amorphous polymers.

  4. Containerless processing of amorphous ceramics

    NASA Technical Reports Server (NTRS)

    Weber, J. K. Richard; Krishnan, Shankar; Schiffman, Robert A.; Nordine, Paul C.

    1990-01-01

    The absence of gravity allows containerless processing of materials which could not otherwise be processed. High melting point, hard materials such as borides, nitrides, and refractory metals are usually brittle in their crystalline form. The absence of dislocations in amorphous materials frequently endows them with flexibility and toughness. Systematic studies of the properties of many amorphous materials have not been carried out. The requirements for their production is that they can be processed in a controlled way without container interaction. Containerless processing in microgravity could permit the control necessary to produce amorphous forms of hard materials.

  5. Thermally reduced graphenes exhibiting a close relationship to amorphous carbon

    NASA Astrophysics Data System (ADS)

    An Wong, Colin Hong; Ambrosi, Adriano; Pumera, Martin

    2012-07-01

    Graphene is an important material for sensing and energy storage applications. Since the vast majority of sensing and energy storage chemical and electrochemical systems require bulk quantities of graphene, thermally reduced graphene oxide (TRGO) is commonly employed instead of pristine graphene. The sp2 planar structure of TRGO is heavily damaged, consisting of a very short sp2 crystallite size of nanometre length and with areas of sp3 hybridized carbon. Such a structure of TRGO is reminiscent of the key characteristic of the structure of amorphous carbon, which is defined as a material without long-range crystalline order consisting of both sp2 and sp3 hybridized carbons. Herein, we describe the characterization of TRGO, its parent graphite material and carbon black (a form of amorphous carbon) via transmission electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry experiments. We used the data obtained as well as consideration of practical factors to perform a comparative assessment of the relative electrochemical performances of TRGO against amorphous carbon. We found out that TRGO and amorphous carbon exhibit almost identical characteristics in terms of density of defects in the sp2 lattice and a similar crystallite size as determined by Raman spectroscopy. These two materials also exhibit similar amounts of oxygen containing groups as determined by XPS and nearly indistinguishable cyclic voltammetric response providing almost identical heterogeneous electron transfer constants. This leads us to conclude that for some sensing and energy storage electrochemical applications, the use of amorphous carbon might be a much more economical solution than the one requiring digestion of highly crystalline graphite with strong oxidants to graphite oxide and then thermally exfoliating it to thermally reduced graphene oxide.

  6. Fabrication of amorphous diamond films

    DOEpatents

    Falabella, S.

    1995-12-12

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

  7. Biologically formed mesoporous amorphous silica.

    PubMed

    Jensen, Martin; Keding, Ralf; Hche, Thomas; Yue, Yuanzheng

    2009-02-25

    Mesoporous crystalline silica has attracted the attention of scientists due to its extraordinary functionalities. In particular, substantial progress has been made in the synthesis of mesoporous crystalline silica using biomimetic approaches under ambient conditions. However, the biomimetic synthesis of mesoporous amorphous silica has not been well studied so far. Here we show that amorphous silica can be synthesized in aqueous solution under ambient conditions via biological catalysis. The high purity amorphous silica is obtained as spicules (average diameter: 15.6 microm) that are cemented through junctions, thereby forming the skeleton of the freshwater sponge Cauxi. We discover that such amorphous spicules themselves contain mesopores. This opens a potential avenue to develop highly durable mesoporous membranes at room temperature. We also describe the macro- and microstructural features, the mechanism of biological precipitation, and the properties of the Cauxi skeleton. PMID:19199622

  8. Adsorption of selenium by amorphous iron oxyhydroxide and manganese dioxide

    USGS Publications Warehouse

    Balistrieri, L.S.; Chao, T.T.

    1990-01-01

    This work compares and models the adsorption of selenium and other anions on a neutral to alkaline surface (amorphous iron oxyhydroxide) and an acidic surface (manganese dioxide). Selenium adsorption on these oxides is examined as a function of pH, particle concentration, oxidation state, and competing anion concentration in order to assess how these factors might influence the mobility of selenium in the environment. The data indicate that 1. 1) amorphous iron oxyhydroxide has a greater affinity for selenium than manganese dioxide, 2. 2) selenite [Se(IV)] adsorption increases with decreasing pH and increasing particle concentration and is stronger than selenate [Se(VI)] adsorption on both oxides, and 3. 3) selenate does not adsorb on manganese dioxide. The relative affinity of selenate and selenite for the oxides and the lack of adsorption of selenate on a strongly acidic surface suggests that selenate forms outer-sphere complexes while selenite forms inner-sphere complexes with the surfaces. The data also indicate that the competition sequence of other anions with respect to selenite adsorption at pH 7.0 is phosphate > silicate > molybdate > fluoride > sulfate on amorphous iron oxyhydroxide and molybdate ??? phosphate > silicate > fluoride > sulfate on manganese dioxide. The adsorption of phosphate, molybdate, and silicate on these oxides as a function of pH indicates that the competition sequences reflect the relative affinities of these anions for the surfaces. The Triple Layer surface complexation model is used to provide a quantitative description of these observations and to assess the importance of surface site heterogeneity on anion adsorption. The modeling results suggest that selenite forms binuclear, innersphere complexes with amorphous iron oxyhydroxide and monodentate, inner-sphere complexes with manganese dioxide and that selenate forms outer-sphere, monodentate complexes with amorphous iron oxyhydroxide. The heterogeneity of the oxide surface sites is reflected in decreasing equilibrium constants for selenite with increasing adsorption density and both experimental observations and modeling results suggest that manganese dioxide has fewer sites of higher energy for selenite adsorption than amorphous iron oxyhydroxide. Modeling and interpreting the adsorption of phosphate, molybdate, and silicate on the oxides are made difficult by the lack of constraint in choosing surface species and the fact that equally good fits can be obtained with different surface species. Finally, predictions of anion competition using the model results from single adsorbate systems are not very successful because the model does not account for surface site heterogeneity. Selenite adsorption data from a multi-adsorbate system could be fit if the equilibrium constant for selenite is decreased with increasing anion adsorption density. ?? 1990.

  9. Complex Amorphous Dielectrics

    SciTech Connect

    van Dover, Robert Bruce

    2014-11-22

    This work focused on synthesizing a wide range of oxides containing two or more metals, and measuring their properties. Many simple metal oxides such as zirconium oxide, have been extensively studied in the past. We developed a technique in which we create a large number of compositions simultaneously and examine their behavior to understand trends and identify high performance materials. Superior performance generally comes in the form of increased responsiveness; in the materials we have studied this may mean more electrical charge for a given voltage in a capacitor, faster switching for a given drive in a transistor, more current for a given voltage in an ionic conductor, or more current for a given illumination in a solar cell. Some of the materials we have identified may find use in decreasing the power needed to operate integrated circuits, other materials could be useful for solar power or other forms of energy conversion.

  10. Amorphous metal alloy and composite

    DOEpatents

    Wang, Rong (Richland, WA); Merz, Martin D. (Richland, WA)

    1985-01-01

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  11. Amorphous carbon for photovoltaics

    NASA Astrophysics Data System (ADS)

    Risplendi, Francesca; Grossman, Jeffrey C.

    2015-03-01

    All-carbon solar cells have attracted attention as candidates for innovative photovoltaic devices. Carbon-based materials such as graphene, carbon nanotubes (CNT) and amorphous carbon (aC) have the potential to present physical properties comparable to those of silicon-based materials with advantages such as low cost and higher thermal stability.In particular a-C structures are promising systems in which both sp2 and sp3 hybridization coordination are present in different proportions depending on the specific density, providing the possibility of tuning their optoelectronic properties and achieving comparable sunlight absorption to aSi. In this work we employ density functional theory to design suitable device architectures, such as bulk heterojunctions (BHJ) or pn junctions, consisting of a-C as the active layer material.Regarding BHJ, we study interfaces between aC and C nanostructures (such as CNT and fullerene) to relate their optoelectronic properties to the stoichiometry of aC. We demonstrate that the energy alignment between the a-C mobility edges and the occupied and unoccupied states of the CNT or C60 can be widely tuned by varying the aC density to obtain a type II interface.To employ aC in pn junctions we analyze the p- and n-type doping of a-C focusingon an evaluation of the Fermi level and work function dependence on doping.Our results highlight promising features of aC as the active layer material of thin-film solar cells.

  12. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    NASA Astrophysics Data System (ADS)

    Li, Xiaopu; Ma, Chung T.; Lu, Jiwei; Devaraj, Arun; Spurgeon, Steven R.; Comes, Ryan B.; Poon, S. Joseph

    2016-01-01

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  13. Allotropic composition of amorphous carbon

    SciTech Connect

    Yastrebov, S. G. Ivanov-Omskii, V. I.

    2007-08-15

    Using the concept of an inhomogeneous broadening of spectral lines of the basic oscillators responsible for forming the spectrum, the experimental dependences of the dispersion of the imaginary part of permittivity are analyzed for amorphous carbon. It turned out that four types of oscillators contribute to this dependence. The first three types represent the electron transitions from the energy-spectrum ground state for {pi} and {sigma} electrons of amorphous carbon to an excited state. The fourth type is related to the absorption of electromagnetic radiation by free charge carriers. The absolute values of squared plasma frequencies of oscillators are estimated, and, using them, the relative fraction of sp{sup 2}-bonded atoms forming the amorphous-carbon skeleton is calculated. This estimate agrees closely with the theoretical predictions for amorphous carbon of the same density as the material under study. The dependence of the relative fraction of sp{sup 2}-bonded atoms contained in amorphous hydrogenised carbon on annealing temperature is determined. The developed method is also applied to the analysis of the normalized curve for the light extinction in the interstellar medium. The contribution to the extinction of two varieties of interstellar matter is detected.

  14. Solid state amorphization of pharmaceuticals.

    PubMed

    Willart, J F; Descamps, M

    2008-01-01

    Amorphous solids are conventionally formed by supercooling liquids or by concentrating noncrystallizing solutes (spray-drying and freeze-drying). However, a lot of pharmaceutical processes may also directly convert compounds from crystal to noncrystal which may have desired or undesired consequences for their stability. The purpose of this short review paper is (i) to illustrate the possibility to amorphize one compound by several different routes (supercooling, dehydration of hydrate, milling, annealing of metastable crystalline forms), (ii) to examine factors that favor crystal to glass rather than crystal to crystal transformations, (iii) to discuss the role of possible amorphous intermediates in solid-solid conversions induced by milling, (iv) to address the issue of chemical stability in the course of solid state amorphization, (v) to discuss the nature of the amorphous state obtained by the nonconventional routes, (vi) to show the effect of milling conditions on glasses properties, and (vii) to attempt to rationalize the observed transformations using the concepts of effective temperature introduced in nonequilibrium physics. PMID:18954076

  15. Nanostructures having crystalline and amorphous phases

    SciTech Connect

    Mao, Samuel S; Chen, Xiaobo

    2015-04-28

    The present invention includes a nanostructure, a method of making thereof, and a method of photocatalysis. In one embodiment, the nanostructure includes a crystalline phase and an amorphous phase in contact with the crystalline phase. Each of the crystalline and amorphous phases has at least one dimension on a nanometer scale. In another embodiment, the nanostructure includes a nanoparticle comprising a crystalline phase and an amorphous phase. The amorphous phase is in a selected amount. In another embodiment, the nanostructure includes crystalline titanium dioxide and amorphous titanium dioxide in contact with the crystalline titanium dioxide. Each of the crystalline and amorphous titanium dioxide has at least one dimension on a nanometer scale.

  16. Generalized melting criterion for amorphization

    SciTech Connect

    Devanathan, R. |; Lam, N.Q.; Okamoto, P.R.; Meshii, M.

    1992-12-01

    We present a thermodynamic model of solid-state amorphization based on a generalization of the well-known Lindemann criterion. The original Lindemann criterion proposes that melting occurs when the root-mean-square amplitude of thermal displacement exceeds a critical value. This criterion can be generalized to include solid-state amorphization by taking into account the static displacements. In an effort to verify the generalized melting criterion, we have performed molecular dynamics simulations of radiation-induced amorphization in NiZr, NiZr{sub 2}, NiTi and FeTi using embedded-atom potentials. The average shear elastic constant G was calculated as a function of the total mean-square atomic displacement following random atom-exchanges and introduction of Frenkel pairs. Results provide strong support for the generalized melting criterion.

  17. Amorphous-diamond electron emitter

    DOEpatents

    Falabella, Steven (Livermore, CA)

    2001-01-01

    An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

  18. Amorphous ruthenium nanoparticles for enhanced electrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Tee, Si Yin; Lee, Coryl Jing Jun; Safari Dinachali, Saman; Lai, Szu Cheng; Williams, Evan Laurence; Luo, He-Kuan; Chi, Dongzhi; Hor, T. S. Andy; Han, Ming-Yong

    2015-10-01

    This paper demonstrates an optimized fabrication of amorphous Ru nanoparticles through annealing at various temperatures ranging from 150 to 700 C, which are used as water oxidation catalyst for effective electrochemical water splitting under a low overpotential of less than 300 mV. The amorphous Ru nanoparticles with short-range ordered structure exhibit an optimal and stable electrocatalytic activity after annealing at 250 C. Interestingly, a small quantity of such Ru nanoparticles in a thin film on fluorine-doped tin oxide glass is also effectively driven by a conventional crystalline silicon solar cell that has excellent capability for harvesting visible light. Remarkably, it achieves an overall solar-to-hydrogen efficiency of 11.3% in acidic electrolyte.

  19. Processing Bi-Pb-Sr-Ca-Cu-O superconductors from amorphous state

    NASA Technical Reports Server (NTRS)

    Chiang, C. K.; Wong-Ng, W.; Cook, L. P.; Freiman, S. W.; Hwang, N. M.; Vaudin, M.; Hill, M. D.; Shull, R. D.; Shapiro, A. J.; Swartzendruber, L. J.

    1991-01-01

    The bismuth based high T sub c superconductors can be processed via an amorphous Bi-Pb-Sr-Ca-Cu oxide. The amorphous oxides were prepared by melting the constituent powders in an alumina crucible at 1200 C in air followed by pouring the liquid onto an aluminum plate, and rapidly pressing with a second plate. In the amorphous state, no crystalline phase was identified in the powder x ray diffraction pattern of the quenched materials. After heat treatment at high temperature the amorphous materials crystallized into a glass ceramic containing a large fraction of the Bi2Sr2Ca2Cu3O(x) phase T sub c = 110 K. The processing method, crystallization, and results of dc electrical resistivity and ac magnetic susceptibility measurements are discussed.

  20. Annealing studies of amorphous alloys

    SciTech Connect

    Wiley, J.D.; Perepezko, J.H.; Nordman, J.E.

    1983-04-01

    Amorphous films of the alloys Ni-Nb, Ni-Mo, Mo-Si, and W-Si were sputter deposited on single-crystal semiconductor substrates. One-hour crystallization temperatures of the films were determined to within +-25/sup 0/C by annealing and x-ray diffraction measurements. Interdiffusion between Au or Cu overlayers and the amorphous films were studied by annealing combined with Auger Electron Spectroscopy (AES) profiling, and by Rutherford Backscatter (RBS) analysis. Supplementary measurements used to study structural relaxation and crystallization included resistivity as a function of temperature; DTA and DSC; and electron microscopy.

  1. Dissolution rates of amorphous Al- and Fe-phosphates and their relevance to phosphate mobility on Mars

    NASA Astrophysics Data System (ADS)

    Tu, Valerie M.

    Phosphate is an essential element for life on Earth, and therefore if life exists or ever existed on Mars it may have required phosphate. Amorphous Al- and Fe-phosphates rapidly precipitate from acidic solutions and amorphous Al-phosphates likely control phosphate concentrations in some natural waters on Earth. Amorphous phases may be even more important on Mars than on Earth, and amorphous phosphates are therefore likely important in the phosphate cycle on Mars. Despite this importance, however, few dissolution rates exist for amorphous Al- and Fe- phosphates. In this study, dissolution rates of amorphous Al- and Fe-phosphates were measured in flow-through reactors from steady state concentrations of Al, Fe and P. A pH--dependent rate law was calculated from the dissolution rates log R = log k -- npH, where R is the dissolution rate, k is intrinsic rate constant and n is the rate dependence on pH. For amorphous Al-phosphate, log k = -6.539 +/- 1.529, and n = 2.391 +/- 0.493. For amorphous Fe-phosphate, log k = -13.031 +/- 0.558, and n = 1.376 +/- 0.221. Amorphous Al-phosphate dissolves stoichiometrically under all conditions, and amorphous Fe-phosphate dissolves non-stoichiometrically, approaching stoichiometric dissolution as pH decreases, due potentially to Fe-oxides precipitating and armoring grain surfaces. Perhaps due to these effects, amorphous Al-phosphate dissolution rates are approximately three orders of magnitude faster than amorphous Fe-phosphate dissolution rates. Amorphous Al-phosphate dissolution rates measured in this study are also faster than published variscite dissolution rates. Dissolution rates of amorphous Al- and Fe-phosphates in this study therefore imply rapid phosphate release into acidic environments, suggesting phosphate mobility under Mars-relevant conditions.

  2. Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

    SciTech Connect

    Zinkle, S.J.; Snead, L.L.

    1995-12-31

    Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to {similar_to}7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of {similar_to}0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe{sup 2+} ions at RT produced amorphization in the implanted ion region after damage levels of {similar_to}1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with 1-MeV He{sup +} ions at RT. By comparison with published results, it is concluded that the implantation of certain chemical species has a pronounced effect on the amorphization threshold dose of all five materials. Intense ionizing radiation inhibits amorphization in Si3N4, but does not appear to significantly influence the amorphization of SiC.

  3. Imprinting bulk amorphous alloy at room temperature.

    PubMed

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T; Lograsso, Thomas A; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jrgen; Lee, Min-Ha

    2015-01-01

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the ability of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. Our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment. PMID:26563908

  4. Imprinting bulk amorphous alloy at room temperature

    PubMed Central

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; Lograsso, Thomas A.; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2015-01-01

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the ability of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. Our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment. PMID:26563908

  5. Imprinting bulk amorphous alloy at room temperature

    NASA Astrophysics Data System (ADS)

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; Lograsso, Thomas A.; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jrgen; Lee, Min-Ha

    2015-11-01

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the ability of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. Our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment.

  6. Optical absorption in amorphous silicon

    SciTech Connect

    O`Leary, S.K.; Zukotynski, S.; Perz, J.M.; Sidhu, L.S.

    1996-12-31

    The role that disorder plays in shaping the form of the optical absorption spectrum of hydrogenated amorphous silicon is investigated. Disorder leads to a redistribution of states, which both reduces the Tauc gap and broadens the absorption tail. The observed relationship between the Tauc gap and the breadth of the absorption tail is thus explained.

  7. Shrinkage of amorphous silica fibers

    NASA Technical Reports Server (NTRS)

    Zaplatynsky, I.

    1983-01-01

    By the application of a new technique, the viscosity of amorphous silica fibers was determined in the 1100-1350 C temperature range. An equation was derived that describes the kinetics of shrinkage of the fibers in terms of their radius, viscosity, and surface tension.

  8. Water clusters in amorphous pharmaceuticals.

    PubMed

    Authelin, Jean-Rene; MacKenzie, Alan P; Rasmussen, Don H; Shalaev, Evgenyi Y

    2014-09-01

    Amorphous materials, although lacking the long-range translational and rotational order of crystalline and liquid crystalline materials, possess certain local (short-range) structure. This paper reviews the distribution of one particular component present in all amorphous pharmaceuticals, that is, water. Based on the current understanding of the structure of water, water molecules can exist in either unclustered form or as aggregates (clusters) of different sizes and geometries. Water clusters are reported in a range of amorphous systems including carbohydrates and their aqueous solutions, synthetic polymers, and proteins. Evidence of water clustering is obtained by various methods that include neutron and X-ray scattering, molecular dynamics simulation, water sorption isotherm, concentration dependence of the calorimetric Tg , dielectric relaxation, and nuclear magnetic resonance. A review of the published data suggests that clustering depends on water concentration, with unclustered water molecules existing at low water contents, whereas clusters form at intermediate water contents. The transition from water clusters to unclustered water molecules can be expected to change water dependence of pharmaceutical properties, such as rates of degradation. We conclude that a mechanistic understanding of the impact of water on the stability of amorphous pharmaceuticals would require systematic studies of water distribution and clustering, while such investigations are lacking. PMID:24824578

  9. Tandem junction amorphous silicon solar cells

    DOEpatents

    Hanak, Joseph J. (Lawrenceville, NJ)

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  10. Comparison of structural and electrical properties of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for α-InGaZnO thin-film transistors

    SciTech Connect

    Pan, Tung-Ming Chen, Ching-Hung; Her, Jim-Long; Koyama, Keiichi

    2014-11-21

    We compared the structural properties and electrical characteristics of high-κ Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for amorphous indium-gallium-zinc oxide (α-InGaZnO) thin-film transistor (TFT) applications. The Lu{sub 2}O{sub 3} film has a strong Lu{sub 2}O{sub 3} (400) peak in the X-ray diffraction pattern, while the Lu{sub 2}TiO{sub 5} sample shows a relatively weak Lu{sub 2}TiO{sub 5} (102) peak. Atomic force microscopy reveals that the Lu{sub 2}O{sub 3} dielectric exhibits a rougher surface (about three times) than Lu{sub 2}TiO{sub 5} one. In X-ray photoelectron spectroscopy analysis, we found that the intensity of the O 1s peak corresponding to Lu(OH){sub x} for Lu{sub 2}O{sub 3} film was higher than that of Lu{sub 2}TiO{sub 5} film. Furthermore, compared with the Lu{sub 2}O{sub 3} dielectric, the α-InGaZnO TFT using the Lu{sub 2}TiO{sub 5} gate dielectric exhibited a lower threshold voltage (from 0.43 to 0.25 V), a higher I{sub on}/I{sub off} current ratio (from 3.5 × 10{sup 6} to 1.3 × 10{sup 8}), a smaller subthreshold swing (from 276 to 130 mV/decade), and a larger field-effect mobility (from 14.5 to 24.4 cm{sup 2}/V s). These results are probably due to the incorporation of TiO{sub x} into the Lu{sub 2}O{sub 3} film to form a Lu{sub 2}TiO{sub 5} structure featuring a smooth surface, a low moisture absorption, a high dielectric constant, and a low interface state density at the oxide/channel interface. Furthermore, the stability of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} α-InGaZnO TFTs was investigated under positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS). The threshold voltage of the TFT performed under NGBS is more degradation than that under PGBS. This behavior may be attributed to the electron charge trapping at the dielectric–channel interface under PGBS, whereas the oxygen vacancies occurred in the InGaZnO under NGBS.

  11. Microstructure and surface chemistry of amorphous alloys important to their friction and wear behavior

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1983-01-01

    An investigation was conducted to examine the microstructure and surface chemistry of amorphous alloys, and their effects on tribological behavior. The results indicate that the surface oxide layers present on amorphous alloys are effective in providing low friction and a protective film against wear in air. Clustering and crystallization in amorphous alloys can be enhanced as a result of plastic flow during the sliding process at a low sliding velocity, at room temperature. Clusters or crystallines with sizes to 150 nm and a diffused honeycomb-shaped structure are produced on the wear surface. Temperature effects lead to drastic changes in surface chemistry and friction behavior of the alloys at temperatures to 750 C. Contaminants can come from the bulk of the alloys to the surface upon heating and impart to the surface oxides at 350 C and boron nitride above 500 C. The oxides increase friction while the boron nitride reduces friction drastically in vacuum.

  12. Amorphous molybdenum sulfides as hydrogen evolution catalysts.

    PubMed

    Morales-Guio, Carlos G; Hu, Xile

    2014-08-19

    Providing energy for a population projected to reach 9 billion people within the middle of this century is one of the most pressing societal issues. Burning fossil fuels at a rate and scale that satisfy our near-term demand will irreversibly damage the living environment. Among the various sources of alternative and CO2-emission-free energies, the sun is the only source that is capable of providing enough energy for the whole world. Sunlight energy, however, is intermittent and requires an efficient storage mechanism. Sunlight-driven water splitting to make hydrogen is widely considered as one of the most attractive methods for solar energy storage. Water splitting needs a hydrogen evolution catalyst to accelerate the rate of hydrogen production and to lower the energy loss in this process. Precious metals such as Pt are superior catalysts, but they are too expensive and scarce for large-scale applications. In this Account, we summarize our recent research on the preparation, characterization, and application of amorphous molybdenum sulfide catalysts for the hydrogen evolution reaction. The catalysts can be synthesized by electrochemical deposition under ambient conditions from readily available and inexpensive precursors. The catalytic activity is among the highest for nonprecious catalysts. For example, at a loading of 0.2 mg/cm(2), the optimal catalyst delivers a current density of 10 mA/cm(2) at an overpotential of 160 mV. The growth mechanism of the electrochemically deposited film catalysts was revealed by an electrochemical quartz microcrystal balance study. While different electrochemical deposition methods produce films with different initial compositions, the active catalysts are the same and are identified as a "MoS(2+x)" species. The activity of the film catalysts can be further promoted by divalent Fe, Co, and Ni ions, and the origins of the promotional effects have been probed. Highly active amorphous molybdenum sulfide particles can also be prepared from simple wet-chemical routes. Electron transport is sometimes slow in the particle catalysts, and an impedance model has been established to identify this slow electron transport. Finally, the amorphous molybdenum sulfide film catalyst has been integrated onto a copper(I) oxide photocathode for photoelectrochemical hydrogen evolution. The conformal catalyst efficiently extracts the excited electrons to give an impressive photocurrent density of -5.7 mA/cm(2) at 0 V vs RHE. The catalyst also confers good stability. PMID:25065612

  13. Physicochemical determinants in the cellular responses to nanostructured amorphous silicas.

    PubMed

    Gazzano, Elena; Ghiazza, Mara; Polimeni, Manuela; Bolis, Vera; Fenoglio, Ivana; Attanasio, Angelo; Mazzucco, Gianna; Fubini, Bice; Ghigo, Dario

    2012-07-01

    Amorphous silicas, opposite to crystalline polymorphs, have been regarded so far as nonpathogenic, but few studies have addressed the toxicity of the wide array of amorphous silica forms. With the advent of nanotoxicology, there has been a rising concern about the safety of silica nanoparticles to be used in nanomedicine. Here, we report a study on the toxicity of amorphous nanostructured silicas obtained with two different preparation procedures (pyrolysis vs. precipitation), the pyrogenic in two very different particle sizes, in order to assess the role of size and origin on surface properties and on the cell damage, oxidative stress, and inflammatory response elicited in murine alveolar macrophages. A quartz dust was employed as positive control and monodispersed silica spheres as negative control. Pyrogenic silicas were remarkably more active than the precipitated one as to cytotoxicity, reactive oxygen species production, lipid peroxidation, nitric oxide synthesis, and production of tumor necrosis factor-?, when compared both per mass and per unit surface. Between the two pyrogenic silicas, the larger one was the more active. Silanols density is the major difference in surface composition among the three silicas, being much larger than the precipitated one as indicated by joint calorimetric and infrared spectroscopy analysis. We assume here that full hydroxylation of a silica surface, with consequent stable coverage by water molecules, reduces/inhibits toxic behavior. The preparation route appears thus determinant in yielding potentially toxic materials, although the smallest size does not always correspond to an increased toxicity. PMID:22491428

  14. Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility

    PubMed Central

    Lin, Hung-Cheng; Stehlin, Fabrice; Soppera, Olivier; Zan, Hsiao-Wen; Li, Chang-Hung; Wieder, Fernand; Ponche, Arnaud; Berling, Dominique; Yeh, Bo-Hung; Wang, Kuan-Hsun

    2015-01-01

    Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro and nanoscale patterns. The directional DUV laser beam avoids the substrate heating and suppresses the diffraction effect. A IGZO precursor solution was also developed to fulfill the requirements for direct photopatterning and for achieving semi-conducting properties with thermal annealing at moderate temperature. The DUV-induced crosslinking of the starting material allows direct write of semi-conducting channels in thin-film transistors but also it improves the field-effect mobility and surface roughness. Material analysis has been carried out by XPS, FTIR, spectroscopic ellipsometry and AFM and the effect of DUV on the final material structure is discussed. The DUV irradiation step results in photolysis and a partial condensation of the inorganic network that freezes the sol-gel layer in a homogeneous distribution, lowering possibilities of thermally induced reorganization at the atomic scale. Laser irradiation allows high-resolution photopatterning and high-enough field-effect mobility, which enables the easy fabrication of oxide nanowires for applications in solar cell, display, flexible electronics, and biomedical sensors. PMID:26014902

  15. Structural study of amorphous polyaniline

    NASA Astrophysics Data System (ADS)

    Laridjani, M.; Pouget, J. P.; MacDiarmid, A. G.; Epstein, A. J.

    1992-06-01

    Many materials, especially polymers, have a substantial volume fraction with no long range crystalline order. Through these regions are often termed amorphous, they frequently have a specific local order. We describe and use here a method, base on a non-energy dispersive X-ray diffraction technique, to obtain good quality interference functions and, by Fourier transform, radial distribution functions of the amorphous structure of polymers. We apply this approach to members of a family of electronic polymers of current interest : polyaniline emeraldine bases. We show that the local order exhibits significant differences in type I and type II materials, precipitated as salt and base respectively. These studies demonstrate the importance of sample preparation in evaluating the physical properties of polyaniline, and provide a structural origin for memory effects observed in the doping-dedoping processes. Beaucoup de matriaux, spcialement les polymres, ont une importante fraction de leur volume sans ordre cristallin longue porte. Bien que ces rgions soient souvent appeles amorphes, elles prsentent frquemment un ordre local caractristique. Nous dcrivons et utilisons dans ce papier une mthode, base sur une technique de diffraction de rayons X non dispersive en nergie, pour obtenir des fonctions d'interfrence de bonne qualit et, par transforme de Fourier, la fonction de distribution radiale des polymres amorphes. Nous appliquons cette technique plusieurs lments d'une mme famille de polymres lectroniques d'intrt actuel : les polyanilines mraldine bases. Nous montrons que l'ordre local prsente d'apprciables diffrences dans les matriaux de type I et II, prpars respectivement sous forme de sel et de base. Cette tude dmontre l'importance des conditions de prparation sur les proprits physiques du polyaniline et donne une base structurale aux effets observs dans les processus de dopage-ddopage de ces matriaux.

  16. Sonochemical synthesis of amorphous iron

    NASA Astrophysics Data System (ADS)

    Suslick, Kenneth S.; Choe, Seok-Burm; Cichowlas, Andrzej A.; Grinstaff, Mark W.

    1991-10-01

    AMORPHOUS metallic alloys ('metallic glasses') lack long-range crystalline order and have unique electronic, magnetic and corrosion-resistant properties1-3. Their applications include use in power-transformer cores, magnetic storage media, cryothermometry and corrosion-resistant coatings. The production of metallic glasses is made difficult, however, by the extremely rapid cooling from the melt that is necessary to prevent crystallization. Cooling rates of about 105 to 107 K s-1 are generally required; for comparison, plunging red-hot steel into water produces cooling rates of only about 2,500 K s-1. Metallic glasses can be formed by splattering molten metal on a cold surface using techniques such as gun, roller or splat quenching4,5. Acoustic cavitation is known to induce extreme local heating in otherwise cold liquids, and to provide very rapid cooling rates6-11. Here we describe the synthesis of metallic-glass powders using the microscopically extreme (yet macroscopically mild) conditions induced by high-intensity ultrasound. The sonolysis of iron pentacarbonyl, a volatile organometallic compound, produces nearly pure amorphous iron. This amorphous iron powder is a highly active catalyst for the Fischer-Tropsch hydrogenation of carbon monoxide and for hydrogenolysis and dehydrogenation of saturated hydrocarbons.

  17. New bulk amorphous magnetic materials

    NASA Astrophysics Data System (ADS)

    Chiriac, H.; Lupu, N.

    2001-06-01

    The relationship between structure and magnetic properties of the melt-spun ribbons with thicknesses up to 200 ?m and rods having up to 3 mm diameter prepared by mould casting and suction casting techniques, of nominal compositions Fe 56Co 7Ni 7Zr 6M 1.5Nb 2.5B 20 (M=Zr, Ti, Ta or Mo) and Nd 50Fe 40Si 10- xAl x was investigated. Saturation magnetisations up to 1.1 T, coercive fields of about 5 A/m, magnetic permeabilities of 25 000-30 000 in the as-cast state were measured for the Fe-based amorphous alloys. The large values over 200 kA/m of the intrinsic coercive field at room temperature and over 600 kA/m at 200 K measured in low magnetic fields for the Nd-Fe-based X-ray amorphous alloys, and its dependence on temperature and cooling rate are ascribed to the existence of very small ferromagnetic clusters embedded in an Nd-rich matrix. The thermal treatments applied to the amorphous samples below the crystallisation temperature cause an improvement in the magnetic properties as a consequence of structural relaxation.

  18. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  19. Microstructure and Wear Behavior of Laser Clad Multi-layered Fe-based Amorphous Coatings on Steel Substrates

    NASA Astrophysics Data System (ADS)

    Paul, Tanaji; Alavi, S. Habib; Biswas, Sourabh; Harimkar, Sandip P.

    2015-12-01

    Single and multi-layered (with two and three layers) coatings of Fe48Cr15Mo14Y2C15B6 amorphous alloy were applied to AISI 1018 steel substrates via laser cladding. XRD analysis indicated partial retention of the amorphous phase along with the formation of oxide and carbide phases. Cross-sectional SEM micrographs revealed relatively sound coatings laser clad with single layer of amorphous alloy; however, cracks and voids were observed in the two and three layered amorphous coatings. The specimens with single and two layered amorphous coatings exhibited surface hardness of about 650 VHN while the hardness of the specimens with three layered amorphous coatings (~1100 VHN) nearly equaled the hardness of previously reported sintered amorphous alloys of similar compositions. The ball-on-disc wear analysis demonstrated a reverse trend wherein the single and two layered amorphous coatings exhibited lower weight loss during the wear test cycle due to superior surface soundness while the three layered amorphous coatings showed aggravated wear due to internal voids and cracks.

  20. Energy release properties of amorphous boron and boron-based propellant primary combustion products

    NASA Astrophysics Data System (ADS)

    Liang, Daolun; Liu, Jianzhong; Xiao, Jinwu; Xi, Jianfei; Wang, Yang; Zhang, Yanwei; Zhou, Junhu

    2015-07-01

    The microstructure of amorphous boron and the primary combustion products of boron-based fuel-rich propellant (hereafter referred to as primary combustion products) was analyzed by scanning electron microscope. Composition analysis of the primary combustion products was carried out by X-ray diffraction and X-ray photoelectron spectroscopy. The energy release properties of amorphous boron and the primary combustion products were comparatively studied by laser ignition experimental system and thermogravimetry-differential scanning calorimetry. The primary combustion products contain B, C, Mg, Al, B4C, B13C2, BN, B2O3, NH4Cl, H2O, and so on. The energy release properties of primary combustion products are different from amorphous boron, significantly. The full-time spectral intensity of primary combustion products at a wavelength of 580 nm is ~2% lower than that of amorphous boron. The maximum spectral intensity of the former at full wave is ~5% higher than that of the latter. The ignition delay time of primary combustion products is ~150 ms shorter than that of amorphous boron, and the self-sustaining combustion time of the former is ~200 ms longer than that of the latter. The thermal oxidation process of amorphous boron involves water evaporation (weight loss) and boron oxidation (weight gain). The thermal oxidation process of primary combustion products involves two additional steps: NH4Cl decomposition (weight loss) and carbon oxidation (weight loss). CL-20 shows better combustion-supporting effect than KClO4 in both the laser ignition experiments and the thermal oxidation experiments.

  1. Narrow band gap amorphous silicon semiconductors

    DOEpatents

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  2. Intrinsic delay of permeable base transistor

    SciTech Connect

    Chen, Wenchao; Guo, Jing; So, Franky

    2014-07-28

    Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barrier height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.

  3. X-ray Diffraction Techniques for Structural Determination of Amorphous Materials

    SciTech Connect

    Saw, C K; Lian, T; Day, S D; Farmer, J C

    2006-10-16

    Prevention of corrosion is a vital goal for the Department of Defense when billions of dollars are spent every year. Corrosion resistant materials have applications in all sort of military vehicles, and more importantly in naval vessels and submarines which come in contact with the seawater. An important application of the corrosion resistant material is in the radioactive waste disposable field where the vessels or containers are expected to hold the radioactive toxic materials for thousands of years to surpass the half life of the radiation. It has been known that corrosion resistance can be improved by the used of structurally designed materials in the amorphous state where the atoms are arranged in a non-periodic conditions, even though, some local chemical short range ordering may occur in the amorphous arrangement. On the other hand, the final material can also be elementally tailored to specific application. This work documents in details the characterization effort for the amorphous materials using x-ray diffraction technique as part of the High Performance Corrosion-Resistant Material--Structural Amorphous Metal (HPCRM-SAM) program here at LLNL. The samples are in the form of powders, ribbons and coatings deposited onto parts. Some brief theoretical background is given in order to interpret the results, instrumentation will also be described. The results suggest that the formation of amorphous phase in the metal alloys powders greatly depends on the processing conditions. In most of the powders, especially lot No.06, the result indicates that the materials are amorphous with a very small amount of iron boron alloy. In the ribbon samples, all the samples and of different compositions as well are observed to be amorphous. In most cases, starting from an amorphous powder sample, the coatings are also observed to be amorphous with a small amount of iron oxide, probably due to exposure to air during the thermal spraying process.

  4. Preparation of amorphous sulfide sieves

    DOEpatents

    Siadati, Mohammad H.; Alonso, Gabriel; Chianelli, Russell R.

    2006-11-07

    The present invention involves methods and compositions for synthesizing catalysts/porous materials. In some embodiments, the resulting materials are amorphous sulfide sieves that can be mass-produced for a variety of uses. In some embodiments, methods of the invention concern any suitable precursor (such as thiomolybdate salt) that is exposed to a high pressure pre-compaction, if need be. For instance, in some cases the final bulk shape (but highly porous) may be same as the original bulk shape. The compacted/uncompacted precursor is then subjected to an open-flow hot isostatic pressing, which causes the precursor to decompose and convert to a highly porous material/catalyst.

  5. Plasma Deposition of Amorphous Silicon

    NASA Technical Reports Server (NTRS)

    Calcote, H. F.

    1982-01-01

    Strongly adhering films of silicon are deposited directly on such materials as Pyrex and Vycor (or equivalent materials) and aluminum by a non-equilibrium plasma jet. Amorphous silicon films are formed by decomposition of silicon tetrachloride or trichlorosilane in the plasma. Plasma-jet technique can also be used to deposit an adherent silicon film on aluminum from silane and to dope such films with phosphorus. Ability to deposit silicon films on such readily available, inexpensive substrates could eventually lead to lower cost photovoltaic cells.

  6. New hydrogenated amorphous silicon alloys

    NASA Astrophysics Data System (ADS)

    Lin, G. H.; Kapur, M.; Bockris, J. O'M.

    1990-07-01

    New alloys of hydogenated amorphous silicon with Al, Ga, S, and Se have been prepared by the rf glow discharge method. The energy gap of these materials can be varied in the 1-2 eV range, with the Al and Ga alloys being low band-gap semiconductors, and the S and Se alloys having higher energy gaps. The light to dark conductivity ratios of the various systems have been measured. The best photoresponse (102-103) was obtained with the Se and S alloys.

  7. Inelastic scattering from amorphous solids

    SciTech Connect

    Price, D.L.

    1985-08-01

    The potential of inelastic neutron scattering techniques for surveying various aspects of the dynamics of amorphous solids is briefly reviewed. The recent use of the Intense Pulsed Neutron Source to provide detailed information on the optical vibrations of glasses is discussed in more detail. The density of states represents an averaged quantity which gives information about the general characteristics of the structure and bonding. More extensive information can be obtained by studying the detailed wavevector dependence of the dynamic structure factor. 15 refs., 7 figs.

  8. Amorphous and crystalline IrO 2 thin films as potential stimulation electrode coatings

    NASA Astrophysics Data System (ADS)

    Thanawala, Sachin S.; Baird, Ronald J.; Georgiev, Daniel G.; Auner, Gregory W.

    2008-06-01

    Amorphous and crystalline iridium oxide thin films with potential use as coating materials for stimulation electrodes were studied. Characterization of these films by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and an increase in charge capacity of iridium oxide thin films after an electrochemical activation process in 0.9% NaCl solution. The surface morphology of these films was studied by scanning electron microscopy. The two types of IrO 2 films were also compared under conditions relevant to applications as stimulation electrodes. The results indicate that amorphous IrO 2 films have significantly higher charge storage capacity and lower impedance than crystalline IrO 2 films. This makes the amorphous films a preferable coating material for stimulation applications.

  9. Chromic mechanism in amorphous WO{sub 3} films

    SciTech Connect

    Zhang, J.G.; Benson, D.K.; Tracy, C.E.; Deb, S.K.; Czanderna, A.W.; Bechinger, C.

    1996-11-01

    The authors propose a new model for the chromic mechanism in amorphous tungsten oxide films (WO{sub 3{minus}y}{center_dot}nH{sub 2}O). This model not only explains a variety of seemingly conflicting experimental results reported in the literature that cannot be explained by existing models, it also has practical implications with respect to improving the coloring efficiency and durability of electrochromic devices. According to this model, a typical as-deposited tungsten oxide film has tungsten mainly in W{sup 6+} and W{sup 4+} states and can be represented as W{sub 1{minus}y}{sup 6+} W{sub y}{sup 4+}O{sub 3{minus}y}{center_dot}nH{sub 2}O. The proposed chromic mechanism is based on the small polaron transition between the charge-induced W{sup 5+} state and the original W{sup 4+} state instead of the W{sup 5+} and W{sup 6+} states as suggested in previous models. The correlation between the electrochromic and photochromic behavior in amorphous tungsten oxide films is also discussed.

  10. Chromic mechanism in amorphous WO{sub 3} films

    SciTech Connect

    Zhang, J.G.; Benson, D.K.; Tracy, C.E.; Deb, S.K.; Czanderna, A.W.; Bechinger, C.

    1997-06-01

    The authors propose a new model for the chromic mechanism in amorphous tungsten oxide films (WO{sub 3{minus}y}{center_dot}nH{sub 2}O). This model not only explains a variety of seemingly conflicting experimental results reported in the literature that cannot be explained by existing models, it also has practical implications with respect to improving the coloring efficiency and durability of electrochromic devices. According to this model, a typical as-deposited tungsten oxide film has tungsten mainly in W{sup 6{minus}} and W{sup 4{minus}} states and can be represented as W{sub 1{minus}y}{sup 6+} W{sub y}{sup 4+}O{sub 3{minus}y}{center_dot}nH{sub 2}O. The proposed chromic mechanism is based on the small polars transition between the charge-induced W{sup 5+} state and the original W{sup 4+} state instead of the W{sup 5+} and W{sup 6+} states as suggested in previous models. The correlation between the electrochromic and photochromic behavior in amorphous tungsten oxide films is also discussed.

  11. Oxygenated amorphous carbon for resistive memory applications

    NASA Astrophysics Data System (ADS)

    Santini, Claudia A.; Sebastian, Abu; Marchiori, Chiara; Jonnalagadda, Vara Prasad; Dellmann, Laurent; Koelmans, Wabe W.; Rossell, Marta D.; Rossel, Christophe P.; Eleftheriou, Evangelos

    2015-10-01

    Carbon-based electronics is a promising alternative to traditional silicon-based electronics as it could enable faster, smaller and cheaper transistors, interconnects and memory devices. However, the development of carbon-based memory devices has been hampered either by the complex fabrication methods of crystalline carbon allotropes or by poor performance. Here we present an oxygenated amorphous carbon (a-COx) produced by physical vapour deposition that has several properties in common with graphite oxide. Moreover, its simple fabrication method ensures excellent reproducibility and tuning of its properties. Memory devices based on a-COx exhibit outstanding non-volatile resistive memory performance, such as switching times on the order of 10 ns and cycling endurance in excess of 104 times. A detailed investigation of the pristine, SET and RESET states indicates a switching mechanism based on the electrochemical redox reaction of carbon. These results suggest that a-COx could play a key role in non-volatile memory technology and carbon-based electronics.

  12. Oxygenated amorphous carbon for resistive memory applications.

    PubMed

    Santini, Claudia A; Sebastian, Abu; Marchiori, Chiara; Jonnalagadda, Vara Prasad; Dellmann, Laurent; Koelmans, Wabe W; Rossell, Marta D; Rossel, Christophe P; Eleftheriou, Evangelos

    2015-01-01

    Carbon-based electronics is a promising alternative to traditional silicon-based electronics as it could enable faster, smaller and cheaper transistors, interconnects and memory devices. However, the development of carbon-based memory devices has been hampered either by the complex fabrication methods of crystalline carbon allotropes or by poor performance. Here we present an oxygenated amorphous carbon (a-COx) produced by physical vapour deposition that has several properties in common with graphite oxide. Moreover, its simple fabrication method ensures excellent reproducibility and tuning of its properties. Memory devices based on a-COx exhibit outstanding non-volatile resistive memory performance, such as switching times on the order of 10?ns and cycling endurance in excess of 10(4) times. A detailed investigation of the pristine, SET and RESET states indicates a switching mechanism based on the electrochemical redox reaction of carbon. These results suggest that a-COx could play a key role in non-volatile memory technology and carbon-based electronics. PMID:26494026

  13. Modelling amorphous computations with transcription networks.

    PubMed

    Simpson, Zack Booth; Tsai, Timothy L; Nguyen, Nam; Chen, Xi; Ellington, Andrew D

    2009-08-01

    The power of electronic computation is due in part to the development of modular gate structures that can be coupled to carry out sophisticated logical operations and whose performance can be readily modelled. However, the equivalences between electronic and biochemical operations are far from obvious. In order to help cross between these disciplines, we develop an analogy between complementary metal oxide semiconductor and transcriptional logic gates. We surmise that these transcriptional logic gates might prove to be useful in amorphous computations and model the abilities of immobilized gates to form patterns. Finally, to begin to implement these computations, we design unique hairpin transcriptional gates and then characterize these gates in a binary latch similar to that already demonstrated by Kim et al. (Kim, White & Winfree 2006 Mol. Syst. Biol. 2, 68 (doi:10.1038/msb4100099)). The hairpin transcriptional gates are uniquely suited to the design of a complementary NAND gate that can serve as an underlying basis of molecular computing that can output matter rather than electronic information. PMID:19474083

  14. Laser surface treatment of amorphous metals

    NASA Astrophysics Data System (ADS)

    Katakam, Shravana K.

    Amorphous materials are used as soft magnetic materials and also as surface coatings to improve the surface properties. Furthermore, the nanocrystalline materials derived from their amorphous precursors show superior soft magnetic properties than amorphous counter parts for transformer core applications. In the present work, laser based processing of amorphous materials will be presented. Conventionally, the nanocrystalline materials are synthesized by furnace heat treatment of amorphous precursors. Fe-based amorphous/nanocrystalline materials due to their low cost and superior magnetic properties are the most widely used soft magnetic materials. However, achieving nanocrystalline microstructure in Fe-Si-B ternary system becomes very difficult owing its rapid growth rate at higher temperatures and sluggish diffusion at low temperature annealing. Hence, nanocrystallization in this system is achieved by using alloying additions (Cu and Nb) in the ternary Fe-Si-B system. Thus, increasing the cost and also resulting in reduction of saturation magnetization. laser processing technique is used to achieve extremely fine nanocrystalline microstructure in Fe-Si-B amorphous precursor. Microstructure-magnetic Property-laser processing co-relationship has been established for Fe-Si-B ternary system using analytical techniques. Laser processing improved the magnetic properties with significant increase in saturation magnetization and near zero coercivity values. Amorphous materials exhibit excellent corrosion resistance by virtue of their atomic structure. Fe-based amorphous materials are economical and due to their ease of processing are of potential interest to synthesize as coatings materials for wear and corrosion resistance applications. Fe-Cr-Mo-Y-C-B amorphous system was used to develop thick coatings on 4130 Steel substrate and the corrosion resistance of the amorphous coatings was improved. It is also shown that the mode of corrosion depends on the laser processing conditions. The microstructure evolution and the corrosion mechanisms operating are evaluated using post processing and post corrosion analysis.

  15. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    NASA Astrophysics Data System (ADS)

    Chowdhury, Zahidur R.; Kherani, Nazir P.

    2014-12-01

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide-plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are VOC of 666 mV, JSC of 29.5 mA-cm-2, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  16. Nonclassical crystallization of amorphous iron nanoparticles by radio frequency methods

    NASA Astrophysics Data System (ADS)

    Carroll, K. J.; Pitts, J. A.; Zhang, Kai; Pradhan, A. K.; Carpenter, E. E.

    2010-05-01

    Amorphous iron nanoparticles were synthesized using an aqueous reduction in iron(II) sulfate with sodium borohydride and sodium citrate. Various radio frequency (rf) exposure times were investigated in order to determine trends in nonclassical crystallization. RF times from 15 to 300 s revealed an increase in crystallite size from 5 to 60 nm, as determined by powder x-ray diffraction. Also, solvent optimization revealed that ethanol produced the largest trends for increasing crystallite size without total oxidation of the samples. Magnetic characterization by room temperature vibrating sample magnetometry and high resolution transmission microscopy was performed to verify magnetic properties and particle morphology.

  17. Fabrication of amorphous metal matrix composites by severe plastic deformation

    NASA Astrophysics Data System (ADS)

    Mathaudhu, Suveen Nigel

    Bulk metallic glasses (BMGs) have displayed impressive mechanical properties, but the use and dimensions of material have been limited due to critical cooling rate requirements and low ductility. The application of severe plastic deformation by equal channel angular extrusion (ECAE) for consolidation of bulk amorphous metals (BAM) and amorphous metal matrix composites (AMMC) is investigated in this dissertation. The objectives of this research are (a) to better understand processing parameters which promote bonding between particles and (b) to determine by what mechanisms the plasticity is enhanced in bulk amorphous metal matrix composites consolidated by ECAE. To accomplish the objectives BAM and AMMCs were produced via ECAE consolidation of Vitreloy 106a (Zr58.5Nb2.8Cu15.6Ni12.8Al 10.3-wt%), ARLloy #1 (Hf71.3Cu16.2Ni7.6Ti 2.2Al2.6-wt%), and both of these amorphous alloys blended with crystalline phases of W, Cu and Ni. Novel instrumented extrusions and a host of post-processing material characterizations were used to evaluate processing conditions and material properties. The results show that ECAE consolidation at temperatures within the supercooled liquid region gives near fully dense (>99%) and well bonded millimeter scale BAM and AMMCs. The mechanical properties of the ECAE processed BMG are comparable to cast material: sigma f = 1640 MPa, ?f = 2.3%, E = 80 GPa for consolidated Vitreloy 106a as compared to sigmaf = 1800 MPa, ?f = 2.5%, E = 85 GPa for cast Vitreloy 106, and sigmaf = 1660 MPa, ? f = 2.0%, E = 97 GPa for ARLloy #1 as compared to sigma f = 2150 MPa, ?f < 2.5%, E = 102 GPa for Hf52 Cu17.9Ni14.6Ti5A10. The mechanical properties of AMMCs are substandard compared to those obtained from melt-infiltrated composites due to non-ideal particle bonding conditions such as surface oxides and crystalline phase morphology and chemistry. It is demonstrated that the addition of a dispersed crystalline phase to an amorphous matrix by ECAE powder consolidation increases the plasticity of the amorphous matrix by providing locations for generation and/or arrest of adiabatic shear bands. The ability of ECAE to consolidated BAM and AMMCs with improved plasticity opens the possibility of overcoming the size and plasticity limitations of the monolithic bulk metallic glasses.

  18. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  19. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, Raoul B. (Haifa, IL)

    1988-01-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  20. Optimization of Conductivity and Transparency in Amorphous In-Zn-O Transparent Conductors: Preprint

    SciTech Connect

    Perkins, J.; Berry, J.; van Hest, M.; Alleman, J.; Dabney, M.; Gedvilas, L.; Ginley, D. S.; Leenheer, A.; O'Hayre, R.

    2008-05-01

    Amorphous mixed metal oxide TCOs are of increasing interest due to the excellent opto-electronic properties and smoothness (RRMS < 0.5 nm) obtained for sputtered films deposited at less than 100 ..deg..C. Here, we have investigated the combined materials phase space of oxygen stoichiometry and metals composition (In:Zn ratio) and made two key discoveries.

  1. Charge transport in gap structures based on amorphous Al2O3

    NASA Astrophysics Data System (ADS)

    Borisova, T. M.; Castro, R. A.; Khanin, S. D.

    2015-11-01

    The charge transport in amorphous layers of oxide of aluminum Al2O3 in the temperature range T=223-273K is studied. It was found the existence of hopping conduction mechanism in studied layers. The values of dispersion parameter s and activation energy EA are determined.

  2. Electron beam recrystallization of amorphous semiconductor materials

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.

    1968-01-01

    Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.

  3. Amorphization of silicon crystals under shear stress

    NASA Astrophysics Data System (ADS)

    Moras, Gianpietro; Klemenz, Andreas; Uetsuka, Hiroshi; Moseler, Michael; Pastewka, Lars

    2014-03-01

    Phase transformations, and in particular amorphization, of crystalline silicon occur under contact loading, e.g. during indentation and scratching experiments. Little is known about shear-induced amorphization of Si, but molecular dynamics (MD) simulations recently unveiled that amorphization of diamond/diamond sliding interfaces is a mechanically driven process that is crucial to the anisotropic wear of diamond. Here, we report the results of MD simulations of Si crystals upon sliding load and compare them to analogous results obtained for diamond. Although crystalline Si is a brittle material with a diamond cubic structure, the properties of Si and C amorphous phases are strikingly different. Our simulations show that shear-induced phase transitions are also remarkably different in the two materials. In diamond, an amorphous region forms at the sliding interface and its thickness grows in time, with a rate that depends on normal load, surface orientation and sliding direction. Also in Si, a thin material region located at the sliding interface undergoes sudden amorphization when the shear stress exceeds the stability limit of the crystal. However, the thickness of such region does not grow in time due to competing amorphization and recrystallization processes. Further growth of the amorphous phase, at temperatures lower than the melting point, can only be achieved with normal loads that exceed the stability limit of the crystalline phase.

  4. Method of making amorphous metal composites

    DOEpatents

    Byrne, Martin A. (Troy, NY); Lupinski, John H. (Scotia, NY)

    1982-01-01

    The process comprises placing an amorphous metal in particulate form and a low molecular weight (e.g., 1000-5000) thermosetting polymer binder powder into a container, mixing these materials, and applying heat and pressure to convert the mixture into an amorphous metal composite.

  5. XRD Technique: A way to disseminate structural changes in iron-based amorphous materials

    SciTech Connect

    Saw, C K; Lian, T; Day, D; Farmer, J

    2007-05-24

    Prevention of corrosion is a vital goal for the Department of Defense when billions of dollars are spent every year. Corrosion resistant materials have applications in all sort of military vehicles, and more importantly in naval vessels and submarines which come in contact with the seawater. It is known that corrosion resistance property can be improved by the used of structurally designed materials in the amorphous state where the atoms are arranged in a non-periodic fashion and specific atoms, tailored to the required properties can be interjected into the matrix for specific application. The XRD techniques reported here is to demonstrate the optimal conditions for characterization of these materials. The samples, which normally contain different compositions of Fe, Cr, B, Mo, Y, Mn, Si and W, are in the form of powders, ribbons and coatings. These results will be compared for the different forms of the sample which appears to correlate to the cooling rate during sample processing. In most cases, the materials are amorphous or amorphous with very small amount of crystallinity. In the ribbon samples for different compositions we observed that the materials are essentially amorphous. In most cases, starting from an amorphous powder sample, the coatings are also observed to be amorphous with a small amount of iron oxide on the surface, probably due to exposure to air.

  6. Tritiated amorphous silicon for micropower applications

    SciTech Connect

    Kherani, N.P. |; Kosteski, T.; Zukotynski, S.; Shmayda, W.T.

    1995-10-01

    The application of tritiated amorphous silicon as an intrinsic energy conversion semiconductor for radioluminescent structures and betavoltaic devices is presented. Theoretical analysis of the betavoltaic application shows an overall efficiency of 18% for tritiated amorphous silicon. This is equivalent to a 330 Ci intrinsic betavoltaic device producing 1 mW of power for 12 years. Photoluminescence studies of hydrogenated amorphous silicon, a-Si:H, show emission in the infra-red with a maximum quantum efficiency of 7.2% at 50 K; this value drops by 3 orders of magnitude at a temperature of 300 K. Similar studies of hydrogenated amorphous carbon show emission in the visible with an estimated quantum efficiency of 1% at 300 K. These results suggest that tritiated amorphous carbon may be the more promising candidate for room temperature radioluminescence in the visible. 18 refs., 5 figs.

  7. Solid-state diffusion in amorphous zirconolite

    SciTech Connect

    Yang, C.; Dove, M. T.; Trachenko, K.; Zarkadoula, E.; Todorov, I. T.; Geisler, T.; Brazhkin, V. V.

    2014-11-14

    We discuss how structural disorder and amorphization affect solid-state diffusion, and consider zirconolite as a currently important case study. By performing extensive molecular dynamics simulations, we disentangle the effects of amorphization and density, and show that a profound increase of solid-state diffusion takes place as a result of amorphization. Importantly, this can take place at the same density as in the crystal, representing an interesting general insight regarding solid-state diffusion. We find that decreasing the density in the amorphous system increases pre-factors of diffusion constants, but does not change the activation energy in the density range considered. We also find that atomic species in zirconolite are affected differently by amorphization and density change. Our microscopic insights are relevant for understanding how solid-state diffusion changes due to disorder and for building predictive models of operation of materials to be used to encapsulate nuclear waste.

  8. Compensated amorphous-silicon solar cell

    DOEpatents

    Devaud, G.

    1982-06-21

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  9. Coating of calcia-doped ceria with amorphous silica shell by seeded polymerization technique

    SciTech Connect

    El-Toni, Ahmed Mohamed . E-mail: el-toni@mail.tagen.tohoku.ac.jp; Yin, Shu; Yabe, Shinryo; Sato, Tsugio

    2005-07-12

    Calcia-doped ceria is of potential interest as an ultraviolet (UV) radiation blocking material in personal care products. However, its high catalytic ability for oxidation of organic materials makes it difficult to use as a sunscreen material. Therefore, calcia-doped ceria was coated with amorphous silica by means of seeded polymerization technique in order to depress its oxidation catalytic ability. The catalytic ability as well as UV-shielding ability was investigated for coated particles.

  10. Locomotion of Amorphous Surface Robots

    NASA Technical Reports Server (NTRS)

    Bradley, Arthur T. (Inventor)

    2016-01-01

    An amorphous robot includes a compartmented bladder containing fluid, a valve assembly, and an outer layer encapsulating the bladder and valve assembly. The valve assembly draws fluid from a compartment(s) and discharges the drawn fluid into a designated compartment to displace the designated compartment with respect to the surface. Another embodiment includes elements each having a variable property, an outer layer that encapsulates the elements, and a control unit. The control unit energizes a designated element to change its variable property, thereby moving the designated element. The elements may be electromagnetic spheres with a variable polarity or shape memory polymers with changing shape and/or size. Yet another embodiment includes an elongated flexible tube filled with ferrofluid, a moveable electromagnet, an actuator, and a control unit. The control unit energizes the electromagnet and moves the electromagnet via the actuator to magnetize the ferrofluid and lengthen the flexible tube.

  11. Locomotion of Amorphous Surface Robots

    NASA Technical Reports Server (NTRS)

    Bradley, Arthur T. (Inventor)

    2014-01-01

    An amorphous robot includes a compartmented bladder containing fluid, a valve assembly, and an outer layer encapsulating the bladder and valve assembly. The valve assembly draws fluid from a compartment(s) and discharges the drawn fluid into a designated compartment to displace the designated compartment with respect to the surface. Another embodiment includes elements each having a variable property, an outer layer that encapsulates the elements, and a control unit. The control unit energizes a designated element to change its variable property, thereby moving the designated element. The elements may be electromagnetic spheres with a variable polarity or shape memory polymers with changing shape and/or size. Yet another embodiment includes an elongated flexible tube filled with ferrofluid, a moveable electromagnet, an actuator, and a control unit. The control unit energizes the electromagnet and moves the electromagnet via the actuator to magnetize the ferrofluid and lengthen the flexible tube.

  12. Telegraph Noise in Amorphous Silicon

    NASA Astrophysics Data System (ADS)

    Lust, Lisa Marie

    1995-01-01

    Switching between discrete resistance levels termed random telegraph switching noise (RTSN) is observed in the co-planar current of hydrogenated amorphous silicon (a-Si:H). The temperature dependence, power spectrum characteristics, and the effects of illumination on RTSN in n-type and p -type doped samples are measured and indicate the noise originates from trap-mediated hydrogen motion. Rise times between the two level fluctuators yield activation energies and attempt to hop frequencies for microscopic hydrogen diffusion and have been independently confirmed by NMR measurements. A computational model based on inhomogeneous conduction mechanisms of percolation filaments is developed which includes the defect structure of a-Si:H. RTSN is observed in the simulated conductance fluctuations and further confirms the experimental results.

  13. Crystalline to amorphous transformation in silicon

    SciTech Connect

    Cheruvu, S.M.

    1982-09-01

    In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects.

  14. Method of producing hydrogenated amorphous silicon film

    DOEpatents

    Wiesmann, Harold J. (Wantagh, NY)

    1980-01-01

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

  15. Selective laser sintering of amorphous metal powder

    NASA Astrophysics Data System (ADS)

    Fischer, P.; Blatter, A.; Romano, V.; Weber, H. P.

    2005-02-01

    For the first time, selective sintering of amorphous PtCuNiP powder with a pulsed Nd:YAG laser has been studied. Upon pulsed interaction, the grains melt only superficially to build necks between the grains. Depending on the laser parameters, the sintered material can be crystallized or retained amorphous. By contrast with crystalline powder, laser sintering of amorphous powder is achieved at substantially lower pulse energies due to its low melting point. The obtained results are compared with previous results from selective laser sintering of titanium powder.

  16. CVD of refractory amorphous metal alloys

    SciTech Connect

    Tenhover, M.

    1995-08-01

    In this work, a novel process is described for the fabrication of multi-metallic amorphous metal alloy coatings using a chemical vapor deposition (CVD) technique. Of special interest in this work are amorphous metal alloys containing Mo and/or Cr which have high crystallization temperatures and readily available low decomposition temperature metal-bearing precursors. The conditions for amorphous alloy formation via CVD are described as well as the chemical properties of these materials. High temperature, aqueous corrosion tests have shown these materials (especially those containing Cr) are among the most corrosion resistant metal alloys known.

  17. Pressure-induced reversible amorphization and an amorphousamorphous transition in Ge2Sb2Te5 phase-change memory material

    PubMed Central

    Sun, Zhimei; Zhou, Jian; Pan, Yuanchun; Song, Zhitang; Mao, Ho-Kwang; Ahuja, Rajeev

    2011-01-01

    Ge2Sb2Te5 (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently studied for the use in phase-change random access memory devices. This type of data storage is achieved by the fast reversible phase transition between amorphous and crystalline GST upon heat pulse. Here we report pressure-induced reversible crystalline-amorphous and polymorphic amorphous transitions in NaCl structured GST by ab initio molecular dynamics calculations. We have showed that the onset amorphization of GST starts at approximately 18GPa and the system become completely random at approximately 22GPa. This amorphous state has a cubic framework (c-amorphous) of sixfold coordinations. With further increasing pressure, the c-amorphous transforms to a high-density amorphous structure with trigonal framework (t-amorphous) and an average coordination number of eight. The pressure-induced amorphization is investigated to be due to large displacements of Te atoms for which weak TeTe bonds exist or vacancies are nearby. Upon decompressing to ambient conditions, the original cubic crystalline structure is restored for c-amorphous, whereas t-amorphous transforms to another amorphous phase that is similar to the melt-quenched amorphous GST. PMID:21670255

  18. Molecular dynamics study of the mechanical loss in amorphous pure and doped silica

    SciTech Connect

    Hamdan, Rashid; Trinastic, Jonathan P.; Cheng, H. P.

    2014-08-07

    Gravitational wave detectors and other precision measurement devices are limited by the thermal noise in the oxide coatings on the mirrors of such devices. We have investigated the mechanical loss in amorphous oxides by calculating the internal friction using classical, atomistic molecular dynamics simulations. We have implemented the trajectory bisection method and the non-local ridge method in the DL-POLY molecular dynamics simulation software to carry out those calculations. These methods have been used to locate the local potential energy minima that a system visits during a molecular dynamics trajectory and the transition state between any two consecutive minima. Using the numerically calculated barrier height distributions, barrier asymmetry distributions, relaxation times, and deformation potentials, we have calculated the internal friction of pure amorphous silica and silica mixed with other oxides. The results for silica compare well with experiment. Finally, we use the numerical calculations to comment on the validity of previously used theoretical assumptions.

  19. Molecular dynamics study of the mechanical loss in amorphous pure and doped silica.

    PubMed

    Hamdan, Rashid; Trinastic, Jonathan P; Cheng, H P

    2014-08-01

    Gravitational wave detectors and other precision measurement devices are limited by the thermal noise in the oxide coatings on the mirrors of such devices. We have investigated the mechanical loss in amorphous oxides by calculating the internal friction using classical, atomistic molecular dynamics simulations. We have implemented the trajectory bisection method and the non-local ridge method in the DL-POLY molecular dynamics simulation software to carry out those calculations. These methods have been used to locate the local potential energy minima that a system visits during a molecular dynamics trajectory and the transition state between any two consecutive minima. Using the numerically calculated barrier height distributions, barrier asymmetry distributions, relaxation times, and deformation potentials, we have calculated the internal friction of pure amorphous silica and silica mixed with other oxides. The results for silica compare well with experiment. Finally, we use the numerical calculations to comment on the validity of previously used theoretical assumptions. PMID:25106591

  20. Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals

    DOEpatents

    Farmer, Joseph C.; Wong, Frank M. G.; Haslam, Jeffery J.; Yang, Nancy; Lavernia, Enrique J.; Blue, Craig A.; Graeve, Olivia A.; Bayles, Robert; Perepezko, John H.; Kaufman, Larry; Schoenung, Julie; Ajdelsztajn, Leo

    2009-11-17

    A system for coating a surface comprises providing a source of amorphous metal, providing ceramic particles, and applying the amorphous metal and the ceramic particles to the surface by a spray. The coating comprises a composite material made of amorphous metal that contains one or more of the following elements in the specified range of composition: yttrium (.gtoreq.1 atomic %), chromium (14 to 18 atomic %), molybdenum (.gtoreq.7 atomic %), tungsten (.gtoreq.1 atomic %), boron (.ltoreq.5 atomic %), or carbon (.gtoreq.4 atomic %).

  1. Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals

    DOEpatents

    Farmer, Joseph C.; Wong, Frank M.G.; Haslam, Jeffery J.; Yang, Nancy; Lavernia, Enrique J.; Blue, Craig A.; Graeve, Olivia A.; Bayles, Robert; Perepezko, John H.; Kaufman, Larry; Schoenung, Julie; Ajdelsztajn, Leo

    2014-07-15

    A system for coating a surface comprises providing a source of amorphous metal, providing ceramic particles, and applying the amorphous metal and the ceramic particles to the surface by a spray. The coating comprises a composite material made of amorphous metal that contains one or more of the following elements in the specified range of composition: yttrium (.gtoreq.1 atomic %), chromium (14 to 18 atomic %), molybdenum (.gtoreq.7 atomic %), tungsten (.gtoreq.1 atomic %), boron (.ltoreq.5 atomic %), or carbon (.gtoreq.4 atomic %).

  2. Surface morphology study of recrystallization dynamics of amorphous ZnO layers prepared on different substrates

    NASA Astrophysics Data System (ADS)

    Hako, Daniel; Bruncko, Jaroslav; Uherek, Frantiek

    2014-06-01

    Amorphous oxides-based devices are exposed, during fabrication, to different processing conditions affecting their properties. Zinc oxide is a prospective candidate for transparent amorphous oxides, but its structure is changing under the influence of temperature. We investigated surface recrystallization of amorphous zinc oxide layers deposited onto fused silica, sapphire and Si substrates by pulsed laser deposition. The prepared three series of layers had highly nonequilibrium phase structures. Using atomic force microscopy and scanning electron microscopy, the effect was studied of subsequent annealing at 200, 400, 600, 800 C for 60 min upon the surface structural properties of the layers. The following parameters were analyzed: average roughness, RMS roughness and size of formed grains on selected places with 1 1 ?m2 area. Surface structural analysis revealed that annealing led to recrystallization of the prepared layers and roughening of the structural features on the surface. With increasing annealing temperature, the calculated parameters were increasing. The average surface roughness of zinc oxide layers annealed at 800 C is three times higher than that of the layers annealed at lower temperatures for all substrates used. The process dynamics of thermally caused recrystallization of the layers was different for each of the substrates used.

  3. Preparation and properties of amorphous wires

    SciTech Connect

    Ogasawara, I.; Ueno, S.

    1995-03-01

    Amorphous magnetostrictive Fe-Si-B and Co-Fe-Si-B various diameters were prepared by in-rotating-water spinning method. Magnetic properties of as-quenched wires and their domain wall propagation characteristics were investigated. All as-quenched amorphous wires show reentrant flux reversal. The critical field of reverse domain nucleation H* decreases with increasing wire diameter. The ratio of B{sub r} to B{sub s} Is almost constant at about 0.45 for as-quenched amorphous wires. The critical length for re-entrant flux reversal linearly increases with Increasing wire diameter, which reflects the effect of the demagnetizing field or the wire. The domain wall mobility of as-quenched amorphous wire is linearly related to the reciprocal of wire diameter.

  4. The microscope structures of amorphous phosphorus

    NASA Astrophysics Data System (ADS)

    Olego, D. J.; Baumann, J. A.; Schachter, R.

    1985-03-01

    The microscopic structures of thin films of amorphous phosphorus have been investigated by Raman scattering. The thin films were deposited by vacuum evaporation at substrate temperatures T s between 300 and 510K. The Raman spectra of the films were compared with vibrational spectra of different allotropes of phosphorus: orthohombic black P, bulk amorphous red P and Hittorf's P. The structure of the films with T s ? 300K is built up of double layers similar to those of orthorhombic black P. For T s?510K the thin films have a structure similar to bulk amorphous red P based on the pentagonal tubes of Hittorf's P. A continuous transformation from one structure to the other is indicated by the Raman spectra of the films at intermediate T s. The Raman measurements support early determinations of the structures of amorphous phosphorus inferred from radial distribution functions.

  5. Solar system ice - Amorphous or crystalline?

    NASA Technical Reports Server (NTRS)

    Smoluchowski, R.

    1983-01-01

    The meteoritic bombardment of icy surfaces is discussed, focusing on the formation of amorphous ice and its thermal, mechanical, and optical properties. A numerical code has been developed for evaluating the ratio of the volume of the melted and vaporized ice target to the volume of the projectile that has impacted the surface and left a crater. However, water will only vaporize with impact speeds over 4 to 6 km/sec, and subsequent condensation into ice below 150 K will produce amorphous ice. A denser form of amorphous ice exists below 10 K, with the transition into a crystalline form occurring above 150 K. Maximum impact velocities have been defined for all major bodies in the solar system, with the finding that crystalline ice will form in the crater while amorphous ice will form on the ejecta. The amount of each is dependent on the ratio of solidified water to condensed water vapor and on the fraction of solid ejecta.

  6. Present status of amorphous soft magnetic alloys

    NASA Astrophysics Data System (ADS)

    Hasegawa, Ryusuke

    2000-06-01

    Application of amorphous soft magnets in electric-utility and industrial transformers are increasingly being adopted, helping to solve global warming and energy-saving problems. In addition, amorphous metal-based magnetic components are used in power electronics, telecommunication equipment, sensing devices, electronic article surveillance systems, etc. Some magnetic inductors find applications in pulse power devices, automotive ignition coils, and electric power conditioning systems. All of these applications are possible because of faster flux reversal, lower magnetic loss and more versatile property modification achievable in amorphous alloys. Improvements in materials processing and device fabrication technology will continue to take place, which will further increase the universe of application of amorphous soft magnets. Some fundamental problems associated with the applications are mentioned.

  7. Ductile crystalline–amorphous nanolaminates

    PubMed Central

    Wang, Yinmin; Li, Ju; Hamza, Alex V.; Barbee, Troy W.

    2007-01-01

    It is known that the room-temperature plastic deformation of bulk metallic glasses is compromised by strain softening and shear localization, resulting in near-zero tensile ductility. The incorporation of metallic glasses into engineering materials, therefore, is often accompanied by complete brittleness or an apparent loss of useful tensile ductility. Here we report the observation of an exceptional tensile ductility in crystalline copper/copper–zirconium glass nanolaminates. These nanocrystalline–amorphous nanolaminates exhibit a high flow stress of 1.09 ± 0.02 GPa, a nearly elastic-perfectly plastic behavior without necking, and a tensile elongation to failure of 13.8 ± 1.7%, which is six to eight times higher than that typically observed in conventional crystalline–crystalline nanolaminates (<2%) and most other nanocrystalline materials. Transmission electron microscopy and atomistic simulations demonstrate that shear banding instability no longer afflicts the 5- to 10-nm-thick nanolaminate glassy layers during tensile deformation, which also act as high-capacity sinks for dislocations, enabling absorption of free volume and free energy transported by the dislocations; the amorphous–crystal interfaces exhibit unique inelastic shear (slip) transfer characteristics, fundamentally different from those of grain boundaries. Nanoscale metallic glass layers therefore may offer great benefits in engineering the plasticity of crystalline materials and opening new avenues for improving their strength and ductility. PMID:17592136

  8. Amorphous Phases on the Surface of Mars

    NASA Technical Reports Server (NTRS)

    Rampe, E. B.; Morris, R. V.; Ruff, S. W.; Horgan, B.; Dehouck, E.; Achilles, C. N.; Ming, D. W.; Bish, D. L.; Chipera, S. J.

    2014-01-01

    Both primary (volcanic/impact glasses) and secondary (opal/silica, allophane, hisingerite, npOx, S-bearing) amorphous phases appear to be major components of martian surface materials based on orbital and in-situ measurements. A key observation is that whereas regional/global scale amorphous components include altered glass and npOx, local scale amorphous phases include hydrated silica/opal. This suggests widespread alteration at low water-to-rock ratios, perhaps due to snow/ice melt with variable pH, and localized alteration at high water-to-rock ratios. Orbital and in-situ measurements of the regional/global amorphous component on Mars suggests that it is made up of at least three phases: npOx, amorphous silicate (likely altered glass), and an amorphous S-bearing phase. Fundamental questions regarding the composition and the formation of the regional/global amorphous component(s) still remain: Do the phases form locally or have they been homogenized through aeolian activity and derived from the global dust? Is the parent glass volcanic, impact, or both? Are the phases separate or intimately mixed (e.g., as in palagonite)? When did the amorphous phases form? To address the question of source (local and/or global), we need to look for variations in the different phases within the amorphous component through continued modeling of the chemical composition of the amorphous phases in samples from Gale using CheMin and APXS data. If we find variations (e.g., a lack of or enrichment in amorphous silicate in some samples), this may imply a local source for some phases. Furthermore, the chemical composition of the weathering products may give insight into the formation mechanisms of the parent glass (e.g., impact glasses contain higher Al and lower Si [30], so we might expect allophane as a weathering product of impact glass). To address the question of whether these phases are separate or intimately mixed, we need to do laboratory studies of naturally altered samples made up of mixed phases (e.g., palagonite) and synthetic single phases to determine their short-range order structures and calculate their XRD patterns to use in models of CheMin data. Finally, to address the timing of the alteration, we need to study rocks on the martian surface of different ages that may contain glass (volcanic or impact) with MSL and future rovers to better understand how glass alters on the martian surface, if that alteration mechanism is universal, and if alteration spans across long periods of time or if there is a time past which unaltered glass remains.

  9. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    SciTech Connect

    Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Barbolla, J.; Srinivasan, M.P.

    2005-08-15

    We introduce a model for damage accumulation up to amorphization, based on the ion-implant damage structures commonly known as amorphous pockets. The model is able to reproduce the silicon amorphous-crystalline transition temperature for C, Si, and Ge ion implants. Its use as an analysis tool reveals an unexpected bimodal distribution of the defect population around a characteristic size, which is larger for heavier ions. The defect population is split in both size and composition, with small, pure interstitial and vacancy clusters below the characteristic size, and amorphous pockets with a balanced mixture of interstitials and vacancies beyond that size.

  10. Opposite correlations between cation disordering and amorphization resistance in spinels versus pyrochlores.

    PubMed

    Uberuaga, Blas Pedro; Tang, Ming; Jiang, Chao; Valdez, James A; Smith, Roger; Wang, Yongqiang; Sickafus, Kurt E

    2015-01-01

    Understanding and predicting radiation damage evolution in complex materials is crucial for developing next-generation nuclear energy sources. Here, using a combination of ion beam irradiation, transmission electron microscopy and X-ray diffraction, we show that, contrary to the behaviour observed in pyrochlores, the amorphization resistance of spinel compounds correlates directly with the energy to disorder the structure. Using a combination of atomistic simulation techniques, we ascribe this behaviour to structural defects on the cation sublattice that are present in spinel but not in pyrochlore. Specifically, because of these structural defects, there are kinetic pathways for the relaxation of disorder in spinel that are absent in pyrochlore. This leads to a direct correlation between amorphization resistance and disordering energetics in spinel, the opposite of that observed in pyrochlores. These results provide new insight into the origins of amorphization resistance in complex oxides beyond fluorite derivatives. PMID:26510750

  11. Opposite correlations between cation disordering and amorphization resistance in spinels versus pyrochlores

    DOE PAGESBeta

    Uberuaga, Blas Pedro; Tang, Ming; Jiang, Chao; Valdez, James A.; Smith, Roger; Wang, Yongqiang; Sickafus, Kurt E.

    2015-10-29

    Understanding and predicting radiation damage evolution in complex materials is crucial for developing next-generation nuclear energy sources. Here, using a combination of ion beam irradiation, transmission electron microscopy and X-ray diffraction, we show that, contrary to the behaviour observed in pyrochlores, the amorphization resistance of spinel compounds correlates directly with the energy to disorder the structure. Using a combination of atomistic simulation techniques, we ascribe this behaviour to structural defects on the cation sublattice that are present in spinel but not in pyrochlore. Specifically, because of these structural defects, there are kinetic pathways for the relaxation of disorder in spinelmore » that are absent in pyrochlore. This leads to a direct correlation between amorphization resistance and disordering energetics in spinel, the opposite of that observed in pyrochlores. Furthermore, these results provide new insight into the origins of amorphization resistance in complex oxides beyond fluorite derivatives.« less

  12. Opposite correlations between cation disordering and amorphization resistance in spinels versus pyrochlores

    PubMed Central

    Uberuaga, Blas Pedro; Tang, Ming; Jiang, Chao; Valdez, James A.; Smith, Roger; Wang, Yongqiang; Sickafus, Kurt E.

    2015-01-01

    Understanding and predicting radiation damage evolution in complex materials is crucial for developing next-generation nuclear energy sources. Here, using a combination of ion beam irradiation, transmission electron microscopy and X-ray diffraction, we show that, contrary to the behaviour observed in pyrochlores, the amorphization resistance of spinel compounds correlates directly with the energy to disorder the structure. Using a combination of atomistic simulation techniques, we ascribe this behaviour to structural defects on the cation sublattice that are present in spinel but not in pyrochlore. Specifically, because of these structural defects, there are kinetic pathways for the relaxation of disorder in spinel that are absent in pyrochlore. This leads to a direct correlation between amorphization resistance and disordering energetics in spinel, the opposite of that observed in pyrochlores. These results provide new insight into the origins of amorphization resistance in complex oxides beyond fluorite derivatives. PMID:26510750

  13. Near-infrared–driven decomposition of metal precursors yields amorphous electrocatalytic films

    PubMed Central

    Salvatore, Danielle A.; Dettelbach, Kevan E.; Hudkins, Jesse R.; Berlinguette, Curtis P.

    2015-01-01

    Amorphous metal-based films lacking long-range atomic order have found utility in applications ranging from electronics applications to heterogeneous catalysis. Notwithstanding, there is a limited set of fabrication methods available for making amorphous films, particularly in the absence of a conducting substrate. We introduce herein a scalable preparative method for accessing oxidized and reduced phases of amorphous films that involves the efficient decomposition of molecular precursors, including simple metal salts, by exposure to near-infrared (NIR) radiation. The NIR-driven decomposition process provides sufficient localized heating to trigger the liberation of the ligand from solution-deposited precursors on substrates, but insufficient thermal energy to form crystalline phases. This method provides access to state-of-the-art electrocatalyst films, as demonstrated herein for the electrolysis of water, and extends the scope of usable substrates to include nonconducting and temperature-sensitive platforms. PMID:26601148

  14. Opposite correlations between cation disordering and amorphization resistance in spinels versus pyrochlores

    SciTech Connect

    Uberuaga, Blas Pedro; Tang, Ming; Jiang, Chao; Valdez, James A.; Smith, Roger; Wang, Yongqiang; Sickafus, Kurt E.

    2015-10-29

    Understanding and predicting radiation damage evolution in complex materials is crucial for developing next-generation nuclear energy sources. Here, using a combination of ion beam irradiation, transmission electron microscopy and X-ray diffraction, we show that, contrary to the behaviour observed in pyrochlores, the amorphization resistance of spinel compounds correlates directly with the energy to disorder the structure. Using a combination of atomistic simulation techniques, we ascribe this behaviour to structural defects on the cation sublattice that are present in spinel but not in pyrochlore. Specifically, because of these structural defects, there are kinetic pathways for the relaxation of disorder in spinel that are absent in pyrochlore. This leads to a direct correlation between amorphization resistance and disordering energetics in spinel, the opposite of that observed in pyrochlores. Furthermore, these results provide new insight into the origins of amorphization resistance in complex oxides beyond fluorite derivatives.

  15. Opposite correlations between cation disordering and amorphization resistance in spinels versus pyrochlores

    NASA Astrophysics Data System (ADS)

    Uberuaga, Blas Pedro; Tang, Ming; Jiang, Chao; Valdez, James A.; Smith, Roger; Wang, Yongqiang; Sickafus, Kurt E.

    2015-10-01

    Understanding and predicting radiation damage evolution in complex materials is crucial for developing next-generation nuclear energy sources. Here, using a combination of ion beam irradiation, transmission electron microscopy and X-ray diffraction, we show that, contrary to the behaviour observed in pyrochlores, the amorphization resistance of spinel compounds correlates directly with the energy to disorder the structure. Using a combination of atomistic simulation techniques, we ascribe this behaviour to structural defects on the cation sublattice that are present in spinel but not in pyrochlore. Specifically, because of these structural defects, there are kinetic pathways for the relaxation of disorder in spinel that are absent in pyrochlore. This leads to a direct correlation between amorphization resistance and disordering energetics in spinel, the opposite of that observed in pyrochlores. These results provide new insight into the origins of amorphization resistance in complex oxides beyond fluorite derivatives.

  16. Structural analysis of a completely amorphous {sup 238}Pu-doped zircon by neutron diffraction.

    SciTech Connect

    Fortner, J. A.; Badyal, Y.; Price, D. C.; Hanchar, J. M.; Weber, W. J.; Materials Science Division; PNNL

    1999-01-01

    The structure of a completely amorphous zircon was determined by time-of-flight neutron diffraction at Argonne's Intense Pulsed Neutron Source (IPNS). The sample of metamict zircon (ZrSiO{sub 4}), initially doped to 8.85 weight percent {sup 238}Pu, had been completely amorphized by alpha-recoil damage since its synthesis in 1981 at the Pacific Northwest National Laboratory (PNNL). The measured diffraction structure factor, S(Q), indicated a completely amorphous sample, with no signs of residual zircon microcrystallinity. The pair distribution function obtained indicated that the structure was that of an oxide glass, retaining the Si-0, Zr-0, and O-O bond lengths of crystalline zircon.

  17. Structural analysis of a completely amorphous {sup 238}Pu-doped zircon by neutron diffraction.

    SciTech Connect

    Fortner, J. A.

    1998-12-16

    The structure of a completely amorphous zircon was determined by time-of-flight neutron diffraction at Argonne's Intense Pulsed Neutron Source (IPNS). The sample of metamict zircon (ZrSiO{sub 4}),initially doped to 8.85 weight percent {sup 238}Pi, had been completely amorphized by alpha-recoil damage since its synthesis in 1981 at the Pacific Northwest National Laboratory (PNNL). The measured diffraction structure factor, S(Q), indicated a completely amorphous sample, with no signs of residual zircon microcrystallinity. The pair distribution function obtained indicated that the structure was that of an oxide glass, retaining the Si-0, Zr-0, and O-O bond lengths of crystalline zircon.

  18. Comprehensive phase characterization of crystalline and amorphous phases of a Class F fly ash

    SciTech Connect

    Chancey, Ryan T.; Stutzman, Paul; Juenger, Maria C.G.; Fowler, David W.

    2010-01-15

    A comprehensive approach to qualitative and quantitative characterization of crystalline and amorphous constituent phases of a largely heterogeneous Class F fly ash is presented. Traditionally, fly ash composition is expressed as bulk elemental oxide content, generally determined by X-ray fluorescence spectroscopy. However, such analysis does not discern between relatively inert crystalline phases and highly reactive amorphous phases of similar elemental composition. X-ray diffraction was used to identify the crystalline phases present in the fly ash, and the Rietveld quantitative phase analysis method was applied to determine the relative proportion of each of these phases. A synergistic method of X-ray powder diffraction, scanning electron microscopy, energy dispersive spectroscopy, and multispectral image analysis was developed to identify and quantify the amorphous phases present in the fly ash.

  19. Tests Of Amorphous-Silicon Photovoltaic Modules

    NASA Technical Reports Server (NTRS)

    Ross, Ronald G., Jr.

    1988-01-01

    Progress in identification of strengths and weaknesses of amorphous-silicon technology detailed. Report describes achievements in testing reliability of solar-power modules made of amorphous-silicon photovoltaic cells. Based on investigation of modules made by U.S. manufacturers. Modules subjected to field tests, to accelerated-aging tests in laboratory, and to standard sequence of qualification tests developed for modules of crystalline-silicon cells.

  20. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    NASA Technical Reports Server (NTRS)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  1. A Magnetic Sensor with Amorphous Wire

    PubMed Central

    He, Dongfeng; Shiwa, Mitsuharu

    2014-01-01

    Using a FeCoSiB amorphous wire and a coil wrapped around it, we have developed a sensitive magnetic sensor. When a 5 mm long amorphous wire with the diameter of 0.1 mm was used, the magnetic field noise spectrum of the sensor was about 30 pT/?Hz above 30 Hz. To show the sensitivity and the spatial resolution, the magnetic field of a thousand Japanese yen was scanned with the magnetic sensor. PMID:24940865

  2. Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

    SciTech Connect

    Miranda, Andre

    2015-08-27

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  3. Amorphization of ceramics by ion beams

    SciTech Connect

    McHargue, C.J.; Farlow, G.C.; White, C.W.; Williams, J.M.; Appleton, B.R.; Naramoto, H.

    1984-01-01

    The influence of the implantation parameters fluence, substrate temperature, and chemical species on the formation of amorphous phases in Al/sub 2/O/sub 3/ and ..cap alpha..-SiC was studied. At 300/sup 0/K, fluences in excess of 10/sup 17/ ions.cm/sup -2/ were generally required to amorphize Al/sub 2/O/sub 3/; however, implantation of zirconium formed the amorphous phase at a fluence of 4 x 10/sup 16/ Zr.cm/sup -2/. At 77/sup 0/K, the threshold fluence was lowered to about 2 x 10/sup 15/ Cr.cm/sup -2/. Single crystals of ..cap alpha..-SiC were amorphized at 300/sup 0/K by a fluence of 2 x 10/sup 14/ Cr.cm/sup -2/ or 1 x 10/sup 15/ N.cm/sup -2/. Implantation at 1023/sup 0/K did not produce the amorphous phase in SiC. The micro-indentation hardness of the amorphous material was about 60% of that of the crystalline counterpart.

  4. Pressure-Induced Amorphization and Phase Transformations in LiAlSiO4 Eucryptite

    SciTech Connect

    Zhang,J.; Zhao, Y.; Xu, H.; Zelinkskas, M.; Wang, L.; Wang, Y.; Uchida, T.

    2005-01-01

    This work presents a comprehensive study on pressure-induced amorphization (PIA) in {beta}-eucryptite (LiAlSiO4) and on the equilibrium states of so-formed amorphous phase at elevated temperatures. Our results revealed that at 300 K {beta}-LiAlSiO4 underwent progressive amorphization at pressures above 4.5 GPa and became completely amorphous above 17.0 GPa. After release of pressure, {beta}-LiAlSiO4 that was partially amorphized at 7.5, 14.0, and 16.0 GPa reverted back to its original crystalline state. When subjected to a complete loss of long-range structural order, the system was recovered as an amorphous state and did not retain the so-called structural memory. Upon heating at high pressures, the partially or completely amorphous {beta}-LiAlSiO4 transformed into various crystalline phases at temperatures above 973 K: between 6.9 and 10.7 GPa it was decomposed into a mixture of LiAlSi2O6 and LiAlO2; at 15.3 GPa the two phases recombined to form a new phase with a spinel structure; and at 22 GPa the spinel phase of LiAlSiO4 was decomposed into its constituent oxides. The observed transformations are all of a reconstructive type and also involve profound changes in atomic coordination environments. A large activation energy barrier associated with coordination changes and a hindrance of atomic mobility at kinetically low temperatures are the primary factors that trigger the PIA.

  5. Amorphization of cobalt monoxide nanocrystals and related explosive gas sensing applications

    NASA Astrophysics Data System (ADS)

    Li, L. H.; Xiao, J.; Yang, G. W.

    2015-10-01

    Amorphous nanomaterials have attracted attention due to their excellent performances, highly comparable to their crystalline counterparts. Sensor materials with amorphous phases are usually evaluated to be unsuitable for sensors because of poor performance. As a matter of fact, amorphous nanomaterials have rather unique sensor behaviors. Here, we report the amorphousization of cobalt monoxide (CoO) nanocrystals driven by a unique process involved in laser ablation in liquid (LAL). We also established that a fast and nonequilibrium process created by LAL results in the amorphousization of nanocrystals. The as-prepared amorphous CoO (a-CoO) nanoflakes possess a high aspect ratio, which showed good sensing of explosive gases. The fabricated gas sensor can detect CO and H2 at levels as low as 5 and 10 ppm, respectively, at 100 C. The performance characteristics of this sensor, including high sensitivity, low working temperature, and low detection limit, are superior to those of sensors made with crystalline phase oxides. Meanwhile, a temperature-dependent p-n transition was observed in the sensors response to CO, suggesting that the sensing properties can be tailored by changing the carrier type, thus tuning the selectivity of sensors to different gases. These findings demonstrate the potential applications of amorphous nanomaterials as gas sensor components.

  6. Microstructure and Electrochemical Behavior of Fe-Based Amorphous Metallic Coatings Fabricated by Atmospheric Plasma Spraying

    NASA Astrophysics Data System (ADS)

    Zhou, Z.; Wang, L.; He, D. Y.; Wang, F. C.; Liu, Y. B.

    2011-01-01

    A Fe48Cr15Mo14C15B6Y2 alloy with high glass forming ability (GFA) was selected to prepare amorphous metallic coatings by atmospheric plasma spraying (APS). The as-deposited coatings present a dense layered structure and low porosity. Microstructural studies show that some nanocrystals and a fraction of yttrium oxides formed during spraying, which induced the amorphous fraction of the coatings decreasing to 69% compared with amorphous alloy ribbons of the same component. High thermal stability enables the amorphous coatings to work below 910 K without crystallization. The results of electrochemical measurement show that the coatings exhibit extremely wide passive region and relatively low passive current density in 3.5% NaCl and 1 mol/L HCl solutions, which illustrate their superior ability to resist localized corrosion. Moreover, the corrosion behavior of the amorphous coatings in 1 mol/L H2SO4 solution is similar to their performance under conditions containing chloride ions, which manifests their flexible and extensive ability to withstand aggressive environments.

  7. Amorphization of cobalt monoxide nanocrystals and related explosive gas sensing applications.

    PubMed

    Li, L H; Xiao, J; Yang, G W

    2015-10-16

    Amorphous nanomaterials have attracted attention due to their excellent performances, highly comparable to their crystalline counterparts. Sensor materials with amorphous phases are usually evaluated to be unsuitable for sensors because of poor performance. As a matter of fact, amorphous nanomaterials have rather unique sensor behaviors. Here, we report the amorphousization of cobalt monoxide (CoO) nanocrystals driven by a unique process involved in laser ablation in liquid (LAL). We also established that a fast and nonequilibrium process created by LAL results in the amorphousization of nanocrystals. The as-prepared amorphous CoO (a-CoO) nanoflakes possess a high aspect ratio, which showed good sensing of explosive gases. The fabricated gas sensor can detect CO and H2 at levels as low as 5 and 10 ppm, respectively, at 100 C. The performance characteristics of this sensor, including high sensitivity, low working temperature, and low detection limit, are superior to those of sensors made with crystalline phase oxides. Meanwhile, a temperature-dependent p-n transition was observed in the sensor's response to CO, suggesting that the sensing properties can be tailored by changing the carrier type, thus tuning the selectivity of sensors to different gases. These findings demonstrate the potential applications of amorphous nanomaterials as gas sensor components. PMID:26392266

  8. Optimization of transparent and reflecting electrodes for amorphous-silicon solar cells. Final subcontract report, 1 May 1991--30 April 1994

    SciTech Connect

    Gordon, R.G.; Hu, J.; Lacks, D.; Musher, J.; Thornton, J.; Liang, H.

    1994-07-01

    Fluorine-doped zinc oxide was shown to have the lowest absorption loss of any of the known transparent conductors. An apparatus was constructed to deposit textured, transparent, conductive, fluorine-doped zinc oxide layers with uniform thickness over a 10 cm by 10 cm area, using inexpensive, high-productivity atmospheric pressure chemical vapor deposition. Amorphous silicon solar cells grown on these textured films show very high peak quantum efficiencies (over 90%). However, a significant contact resistance develops at the interface between the amorphous silicon and the zinc oxide. Transparent, conductive gallium-doped zinc oxide films were grown by APCVD at a low enough temperature (260{degree}C) to be deposited on amorphous silicon as a final conductive back contact to solar cells. A quantum-mechanical theory of bonding was developed and applied to some metal oxides; it forms a basis for understanding TCO structures and the stability of their interfaces with silicon.

  9. Amorphous silica nanoparticles impair vascular homeostasis and induce systemic inflammation

    PubMed Central

    Nemmar, Abderrahim; Albarwani, Sulayma; Beegam, Sumaya; Yuvaraju, Priya; Yasin, Javed; Attoub, Samir; Ali, Badreldin H

    2014-01-01

    Amorphous silica nanoparticles (SiNPs) are being used in biomedical, pharmaceutical, and many other industrial applications entailing human exposure. However, their potential vascular and systemic pathophysiologic effects are not fully understood. Here, we investigated the acute (24 hours) systemic toxicity of intraperitoneally administered 50 nm and 500 nm SiNPs in mice (0.5 mg/kg). Both sizes of SiNPs induced a platelet proaggregatory effect in pial venules and increased plasma concentration of plasminogen activator inhibitor-1. Elevated plasma levels of von Willebrand factor and fibrinogen and a decrease in the number of circulating platelets were only seen following the administration of 50 nm SiNPs. The direct addition of SiNPs to untreated mouse blood significantly induced in vitro platelet aggregation in a dose-dependent fashion, and these effects were more pronounced with 50 nm SiNPs. Both sizes of SiNPs increased lactate dehydrogenase activity and interleukin 1? concentration. However, tumor necrosis factor ? concentration was only increased after the administration of 50 nm SiNPs. Nevertheless, plasma markers of oxidative stress, including 8-isoprostane, thiobarbituric acid reactive substances, catalase, and glutathione S-transferase, were not affected by SiNPs. The in vitro exposure of human umbilical vein endothelial cells to SiNPs showed a reduced cellular viability, and more potency was seen with 50 nm SiNPs. Both sizes of SiNPs caused a decrease in endothelium-dependent relaxation of isolated small mesenteric arteries. We conclude that amorphous SiNPs cause systemic inflammation and coagulation events, and alter vascular reactivity. Overall, the effects observed with 50 nm SiNPs were more pronounced than those with 500 nm SiNPs. These findings provide new insight into the deleterious effect of amorphous SiNPs on vascular homeostasis. PMID:24936130

  10. In Situ Laser Synthesis of Fe-Based Amorphous Matrix Composite Coating on Structural Steel

    NASA Astrophysics Data System (ADS)

    Katakam, Shravana; Hwang, Jun Y.; Paital, Sameer; Banerjee, Rajarshi; Vora, Hitesh; Dahotre, Narendra B.

    2012-12-01

    Iron-based amorphous materials, owing to their very high hardness, elastic modulus, wear resistance, and corrosion resistance, can be potential materials for surface modification and engineering of many structural alloys. The current study focuses on a novel functional coating, synthesized via laser cladding of an iron-based (Fe48Cr15Mo14Y2C15B) amorphous precursor powder, on AISI 4130 steel substrate, using a continuous-wave diode-pumped ytterbium laser. The coatings were characterized by different techniques like X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). SEM and TEM studies indicated the presence of Fe-based nanocrystalline dendrites intermixed within an amorphous matrix. A three-dimensional thermal modeling approach based on COMSOL Multiphysics (COMSOL Inc., Burlington, MA) was used to approximately predict the temperature evolution and cooling rates achieved during laser processing. The mechanisms for the formation of crystalline phases and the morphological changes in the microstructure were studied based on the thermal model developed. Although the thermal model predicted substantially high cooling rates as compared to the critical cooling rate required for retaining an amorphous phase, the formation of crystalline phases is attributed to formation of yttrium oxide, reducing the glass-forming ability, and formation of different oxide phases that act as heterogeneous nucleation sites resulting in the composite microstructure.

  11. Reversible amorphization and the catalytically active state of crystalline Co3O4 during oxygen evolution

    PubMed Central

    Bergmann, Arno; Martinez-Moreno, Elias; Teschner, Detre; Chernev, Petko; Gliech, Manuel; de Araújo, Jorge Ferreira; Reier, Tobias; Dau, Holger; Strasser, Peter

    2015-01-01

    Water splitting catalysed by earth-abundant materials is pivotal for global-scale production of non-fossil fuels, yet our understanding of the active catalyst structure and reactivity is still insufficient. Here we report on the structurally reversible evolution of crystalline Co3O4 electrocatalysts during oxygen evolution reaction identified using advanced in situ X-ray techniques. At electrode potentials facilitating oxygen evolution, a sub-nanometre shell of the Co3O4 is transformed into an X-ray amorphous CoOx(OH)y which comprises di-μ-oxo-bridged Co3+/4+ ions. Unlike irreversible amorphizations, here, the formation of the catalytically-active layer is reversed by re-crystallization upon return to non-catalytic electrode conditions. The Co3O4 material thus combines the stability advantages of a controlled, stable crystalline material with high catalytic activity, thanks to the structural flexibility of its active amorphous oxides. We propose that crystalline oxides may be tailored for generating reactive amorphous surface layers at catalytic potentials, just to return to their stable crystalline state under rest conditions. PMID:26456525

  12. From amorphous to crystalline silicon nanoclusters: structural effects on exciton properties

    NASA Astrophysics Data System (ADS)

    Borrero-Gonzlez, L. J.; Nunes, L. A. O.; Guimares, F. E. G.; Wojcik, J.; Mascher, P.; Gennaro, A. M.; Tirado, M.; Comedi, D.

    2011-12-01

    Synchrotron x-ray absorption spectroscopy (XAS) and electron spin resonance (ESR) experiments were performed to determine, in combination with Raman spectroscopy and x-ray diffraction (XRD) data from previous reports, the structure and paramagnetic defect status of Si-nanoclusters (ncls) at various intermediate formation stages in Si-rich Si oxide films having different Si concentrations (y = 0.36-0.42 in SiyO1-y), fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition and isochronally (2 h) annealed at various temperatures (Ta = 900-1100?C) under either Ar or (Ar + 5%H2) atmospheres. The corresponding emission properties were studied by stationary and time dependent photoluminescence (PL) spectroscopy in correlation with the structural and defect properties. To explain the experimental data, we propose crystallization by nucleation within already existing amorphous Si-ncls as the mechanism for the formation of the Si nanocrystals in the oxide matrix. The cluster-size dependent partial crystallization of Si-ncls at intermediate Ta can be qualitatively understood in terms of a crystalline core-amorphous shell Si-ncl model. The amorphous shell, which is invisible in most diffraction and electron microscopy experiments, is found to have an important impact on light emission. As the crystalline core grows at the expense of a thinning amorphous shell with increasing Ta, the PL undergoes a transition from a regime dominated by disorder-induced effects to a situation where quantum confinement of excitons prevails.

  13. Reversible amorphization and the catalytically active state of crystalline Co3O4 during oxygen evolution

    NASA Astrophysics Data System (ADS)

    Bergmann, Arno; Martinez-Moreno, Elias; Teschner, Detre; Chernev, Petko; Gliech, Manuel; de Araújo, Jorge Ferreira; Reier, Tobias; Dau, Holger; Strasser, Peter

    2015-10-01

    Water splitting catalysed by earth-abundant materials is pivotal for global-scale production of non-fossil fuels, yet our understanding of the active catalyst structure and reactivity is still insufficient. Here we report on the structurally reversible evolution of crystalline Co3O4 electrocatalysts during oxygen evolution reaction identified using advanced in situ X-ray techniques. At electrode potentials facilitating oxygen evolution, a sub-nanometre shell of the Co3O4 is transformed into an X-ray amorphous CoOx(OH)y which comprises di-μ-oxo-bridged Co3+/4+ ions. Unlike irreversible amorphizations, here, the formation of the catalytically-active layer is reversed by re-crystallization upon return to non-catalytic electrode conditions. The Co3O4 material thus combines the stability advantages of a controlled, stable crystalline material with high catalytic activity, thanks to the structural flexibility of its active amorphous oxides. We propose that crystalline oxides may be tailored for generating reactive amorphous surface layers at catalytic potentials, just to return to their stable crystalline state under rest conditions.

  14. Fungus-mediated biotransformation of amorphous silica in rice husk to nanocrystalline silica.

    PubMed

    Bansal, Vipul; Ahmad, Absar; Sastry, Murali

    2006-11-01

    Rice husk is a cheap agro-based waste material, which harbors a substantial amount of silica in the form of amorphous hydrated silica grains. However, there have been no attempts at harnessing the enormous amount of amorphous silica present in rice husk and its room-temperature biotransformation into crystalline silica nanoparticles. In this study, we address this issue and describe how naturally deposited amorphous biosilica in rice husk can be bioleached and simultaneously biotransformed into high value crystalline silica nanoparticles. We show here that the fungus Fusarium oxysporum rapidly biotransforms the naturally occurring amorphous plant biosilica into crystalline silica and leach out silica extracellularly at room temperature in the form of 2-6 nm quasi-spherical, highly crystalline silica nanoparticles capped by stabilizing proteins; that the nanoparticles are released into solution is an advantage of this process with significant application and commercial potential. Calcination of the silica nanoparticles leads to loss of occluded protein and to an apparently porous structure often of cubic morphology. The room-temperature synthesis of oxide nanomaterials using microorganisms starting from potential cheap agro-industrial waste materials is an exciting possibility and could lead to an energy-conserving and economically viable green approach toward the large-scale synthesis of oxide nanomaterials. PMID:17061888

  15. Reversible amorphization and the catalytically active state of crystalline Co3O4 during oxygen evolution.

    PubMed

    Bergmann, Arno; Martinez-Moreno, Elias; Teschner, Detre; Chernev, Petko; Gliech, Manuel; de Arajo, Jorge Ferreira; Reier, Tobias; Dau, Holger; Strasser, Peter

    2015-01-01

    Water splitting catalysed by earth-abundant materials is pivotal for global-scale production of non-fossil fuels, yet our understanding of the active catalyst structure and reactivity is still insufficient. Here we report on the structurally reversible evolution of crystalline Co3O4 electrocatalysts during oxygen evolution reaction identified using advanced in situ X-ray techniques. At electrode potentials facilitating oxygen evolution, a sub-nanometre shell of the Co3O4 is transformed into an X-ray amorphous CoOx(OH)y which comprises di-?-oxo-bridged Co(3+/4+) ions. Unlike irreversible amorphizations, here, the formation of the catalytically-active layer is reversed by re-crystallization upon return to non-catalytic electrode conditions. The Co3O4 material thus combines the stability advantages of a controlled, stable crystalline material with high catalytic activity, thanks to the structural flexibility of its active amorphous oxides. We propose that crystalline oxides may be tailored for generating reactive amorphous surface layers at catalytic potentials, just to return to their stable crystalline state under rest conditions. PMID:26456525

  16. Properties of Amorphous Carbon Microspheres Synthesised by Palm Oil-CVD Method

    SciTech Connect

    Zobir, S. A. M.; Zainal, Z.; Sarijo, S. H.; Rusop, M.

    2011-03-30

    Amorphous carbon microspheres were synthesized using a dual-furnace chemical vapour deposition method at 800-1000 deg. C. Palm oil-based cooking oil (PO) and zinc nitrate solution was used as a carbon source and catalyst precursor, respectively with PO to zinc nitrate ratio of 30:20 (v/v) and a silicon wafer as the sample target. Regular microsphere shape of the amorphous carbons was obtained and a uniform microsphere structure improved as the carbonization temperature increased from 800 to 1000 deg. C. At 800 deg. C, no regular microspheres were formed but more uniform structure is observed at 900 deg. C. Generally the microspheres size is uniform when the heating temperature was increased to 1000 deg. C, but the presence of mixed sizes can still be observed. X-ray diffraction patterns show the presence of oxide of carbon, ZnO phase together with Zn oxalate phase. Raman spectra show two broad peaks characteristic to amorphous carbon at 1344 and 1582 cm{sup -1} for the D and G bands, respectively. These bands become more prominent as the preparation temperature increased from 800 to 1000 deg. C. This is in agreement with the formation of amorphous carbon microspheres as shown by the FESEM study and other Zn-based phases as a result of the oxidation process of the palm oil as the carbon source and the zinc nitrate as the catalyst precursor, respectively.

  17. White electroluminescence from hydrogenated amorphous-SiNx thin films

    NASA Astrophysics Data System (ADS)

    Pei, Zingway; Chang, Y. R.; Hwang, H. L.

    2002-04-01

    White electroluminescence (EL) was observed from hydrogenated amorphous-SiNx-based light-emitting device. Silicon nitride thin films were deposited on the indium-tin-oxide (ITO)-coated glass substrate by plasma enhanced chemical vapor deposition method with a mixture of Ar-diluted 5% SiH4 and pure N2 gases, in the ratio 2 to 1. Measured x value of the film is 0.56, and the corresponding photoluminescence of a-SiN0.56:H thin film exhibited a red-infrared spectrum, centered at 630 nm. The layer structure of the EL device is ITO/a-SiN0.56:H (80 nm)/Al, with light emitting from the ITO layer, recognizable by the naked eye in the dark, under the 14 V forward bias conditions. White EL spectra from 400 to 750 nm, with a central peak at 560 nm, were observed in the hydrogenated amorphous silicon nitride EL device. A carrier transport mechanism was suggested, and the EL was attributed to the recombination of carriers through the luminescent states.

  18. Electron-beam-assisted superplastic shaping of nanoscale amorphous silica.

    PubMed

    Zheng, Kun; Wang, Chengcai; Cheng, Yong-Qiang; Yue, Yonghai; Han, Xiaodong; Zhang, Ze; Shan, Zhiwei; Mao, Scott X; Ye, Miaomiao; Yin, Yadong; Ma, Evan

    2010-01-01

    Glasses are usually shaped through the viscous flow of a liquid before its solidification, as practiced in glass blowing. At or near room temperature (RT), oxide glasses are known to be brittle and fracture upon any mechanical deformation for shape change. Here, we show that with moderate exposure to a low-intensity (<1.810(-2) A cm(-2)) electron beam (e-beam), dramatic shape changes can be achieved for nanoscale amorphous silica, at low temperatures and strain rates >10(-4) per second. We show not only large homogeneous plastic strains in compression for nanoparticles but also superplastic elongations >200% in tension for nanowires (NWs). We also report the first quantitative comparison of the load-displacement responses without and with the e-beam, revealing dramatic difference in the flow stress (up to four times). This e-beam-assisted superplastic deformability near RT is useful for processing amorphous silica and other conventionally-brittle materials for their applications in nanotechnology. PMID:20975693

  19. Electron-beam-assisted superplastic shaping of nanoscale amorphous silica

    PubMed Central

    Zheng, Kun; Wang, Chengcai; Cheng, Yong-Qiang; Yue, Yonghai; Han, Xiaodong; Zhang, Ze; Shan, Zhiwei; Mao, Scott X; Ye, Miaomiao; Yin, Yadong; Ma, Evan

    2010-01-01

    Glasses are usually shaped through the viscous flow of a liquid before its solidification, as practiced in glass blowing. At or near room temperature (RT), oxide glasses are known to be brittle and fracture upon any mechanical deformation for shape change. Here, we show that with moderate exposure to a low-intensity (<1.810?2 A cm?2) electron beam (e-beam), dramatic shape changes can be achieved for nanoscale amorphous silica, at low temperatures and strain rates >10?4 per second. We show not only large homogeneous plastic strains in compression for nanoparticles but also superplastic elongations >200% in tension for nanowires (NWs). We also report the first quantitative comparison of the load-displacement responses without and with the e-beam, revealing dramatic difference in the flow stress (up to four times). This e-beam-assisted superplastic deformability near RT is useful for processing amorphous silica and other conventionally-brittle materials for their applications in nanotechnology. PMID:20975693

  20. Amorphous Silicon Based Neutron Detector

    SciTech Connect

    Xu, Liwei

    2004-12-12

    Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield using low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; Various single-junction and double junction detector devices have been fabricated; The detector devices fabricated have been systematically tested and analyzed. Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies developed here could be used to develop X-ray and neutron monitors that could be used in the future for security checks at the airports and other critical facilities. The project would lead to devices that could significantly enhance the performance of multi-billion dollar neutron source facilities in the US and bring our nation to the forefront of neutron beam sciences and technologies which have enormous impact to materials, life science and military research and applications.

  1. Amorphous Diamond MEMS and Sensors

    SciTech Connect

    SULLIVAN, JOHN P.; FRIEDMANN, THOMAS A.; ASHBY, CAROL I.; DE BOER, MAARTEN P.; SCHUBERT, W. KENT; SHUL, RANDY J.; HOHLFELDER, ROBERT J.; LAVAN, D.A.

    2002-06-01

    This report describes a new microsystems technology for the creation of microsensors and microelectromechanical systems (MEMS) using stress-free amorphous diamond (aD) films. Stress-free aD is a new material that has mechanical properties close to that of crystalline diamond, and the material is particularly promising for the development of high sensitivity microsensors and rugged and reliable MEMS. Some of the unique properties of aD include the ability to easily tailor film stress from compressive to slightly tensile, hardness and stiffness 80-90% that of crystalline diamond, very high wear resistance, a hydrophobic surface, extreme chemical inertness, chemical compatibility with silicon, controllable electrical conductivity from insulating to conducting, and biocompatibility. A variety of MEMS structures were fabricated from this material and evaluated. These structures included electrostatically-actuated comb drives, micro-tensile test structures, singly- and doubly-clamped beams, and friction and wear test structures. It was found that surface micromachined MEMS could be fabricated in this material easily and that the hydrophobic surface of the film enabled the release of structures without the need for special drying procedures or the use of applied hydrophobic coatings. Measurements using these structures revealed that aD has a Young's modulus of {approx}650 GPa, a tensile fracture strength of 8 GPa, and a fracture toughness of 8 MPa{center_dot}m {sup 1/2}. These results suggest that this material may be suitable in applications where stiction or wear is an issue. Flexural plate wave (FPW) microsensors were also fabricated from aD. These devices use membranes of aD as thin as {approx}100 nm. The performance of the aD FPW sensors was evaluated for the detection of volatile organic compounds using ethyl cellulose as the sensor coating. For comparable membrane thicknesses, the aD sensors showed better performance than silicon nitride based sensors. Greater than one order of magnitude increase in chemical sensitivity is expected through the use of ultra-thin aD membranes in the FPW sensor. The discoveries and development of the aD microsystems technology that were made in this project have led to new research projects in the areas of aD bioMEMS and aD radio frequency MEMS.

  2. Amorphous silicon detectors in positron emission tomography

    SciTech Connect

    Conti, M. Lawrence Berkeley Lab., CA ); Perez-Mendez, V. )

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  3. Understanding Thermal Conductivity in Amorphous Materials

    NASA Astrophysics Data System (ADS)

    Kommandur, Sampath; Yee, Shannon

    2014-03-01

    Current energy technologies such as thermoelectrics, photovoltaics, and LEDs make extensive use of amorphous materials and are limited by heat transfer. Device improvements necessitate a better understanding of the thermal conductivity in amorphous materials. While there are basic theories that capture the trends in thermal conductivity of a select set of amorphous materials, a general framework is needed to explain the fundamental transport of heat in all amorphous materials. One empirical theory that has been successful at describing the thermal conductivity in some materials is the k-min model, however, assumptions in that model limit its generalizability. Another theory defines the existence of propagons, diffusons, and locons, which constitute vibrational modes that carry heat. Our work first presents a summary of literature on the thermal conductivity in amorphous materials and then compares those theories to a breadth of experimental data. Based upon those results, a generic model is proposed that is widely applicable with the ultimate goal of this work being to describe the temperature dependent thermal conductivity of polymers. -/abstract- Sampath Kommandur and Shannon K. Yee 21.1.1: Thermoelectric Phenomena, Materials, Devices, and Applications (GER

  4. SURVIVAL OF AMORPHOUS WATER ICE ON CENTAURS

    SciTech Connect

    Guilbert-Lepoutre, Aurelie

    2012-10-01

    Centaurs are believed to be Kuiper Belt objects in transition between Jupiter and Neptune before possibly becoming Jupiter family comets. Some indirect observational evidence is consistent with the presence of amorphous water ice in Centaurs. Some of them also display a cometary activity, probably triggered by the crystallization of the amorphous water ice, as suggested by Jewitt and this work. Indeed, we investigate the survival of amorphous water ice against crystallization, using a fully three-dimensional thermal evolution model. Simulations are performed for varying heliocentric distances and obliquities. They suggest that crystallization can be triggered as far as 16 AU, though amorphous ice can survive beyond 10 AU. The phase transition is an efficient source of outgassing up to 10-12 AU, which is broadly consistent with the observations of the active Centaurs. The most extreme case is 167P/CINEOS, which barely crystallizes in our simulations. However, amorphous ice can be preserved inside Centaurs in many heliocentric distance-obliquity combinations, below a {approx}5-10 m crystallized crust. We also find that outgassing due to crystallization cannot be sustained for a time longer than 10{sup 4}-10{sup 4} years, leading to the hypothesis that active Centaurs might have recently suffered from orbital changes. This could be supported by both observations (although limited) and dynamical studies.

  5. [Amorphous form in pharmaceutical technological research].

    PubMed

    Mrtha, Csaba; Jjrtn, Laczkovich Orsolya; Szabn, Rvsz Piroska

    2011-01-01

    Detecting and analysing of the amorphous phase are increasingly important in pharmaceutical technology. The amorphous or glassy state has a several advantages and disadvantages. The amorphous form can be applied in deliberate amorphization, when active pharmaceutical ingredient (API) is formulated in glassy state, or this form can appear accidentally during formulation or storage. The aim of this study was to characterize glass-forming properties of 13 different materials. Differential Scanning Calorimetry (DSC) was used as an analytical technique and T(g) and T(m) values were determined. The equation of T(g)/T(m) (K/K) was applied to determine the glass-forming tendencies. We made 2 groups of investigated substances. The first group was that we could not amorphized: tenoxicam, mannitol, niflumic acid, theophyllin and lidocain. The second group contains materials, which could be prepared in glassy form. This group can be divided into 2 sub-groups: poor-glass formers and good-glass formers. Poor-glass formers are following: meloxicam, ibuprofen and piroxicam. Good-glass formers are lacidipine, gemfibrosil, sorbitol, loratadine, chlorhexidine and clopidogrel hydrogensulfate. PMID:21595304

  6. Modeling selenate adsorption behavior on oxides, clay minerals, and soils using the triple layer model

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Selenate adsorption behavior was investigated on amorphous aluminum oxide, amorphous iron oxide, goethite, clay minerals: kaolinites, montmorillonites, illite, and 18 soil samples from Hawaii, and the Southwestern and the Midwestern regions of the US as a function of solution pH. Selenate adsorpti...

  7. The XRD Amorphous Component in John Klein Drill Fines at Yellowknife Bay, Gale Crater, Mars

    NASA Technical Reports Server (NTRS)

    Morris, Richard V.; Ming,, Douglas W.; Blake, David; Vaniman, David; Bish, David L; Chipera, Steve; Downs, Robert; Morrison, Shaunna; Gellert, Ralf; Campbell, Iain; Treiman, Alan H.; Achilles, Cherie; Bristow, Thomas; Crisp, Joy A.; McAdam, Amy; Archer, Paul Douglas; Sutter, Brad; Rampe, Elizabeth B.

    2013-01-01

    Drill fines of mudstone (targets John Klein and Cumberland) from the Sheepbed unit at Yel-lowknife Bay were analyzed by MSL payload elements including the Chemistry and Mineralogy (CheMin), APXS (Alpha Particle X-Ray Spectrometer), and Sample Analysis at Mars (SAM) instruments. CheMin XRD results show a variety of crystalline phases including feldspar, pyroxene, olivine, oxides, oxyhydroxides, sulfates, sulfides, a tri-octahedral smectite, and XRD amorphous material. The drill fines are distinctly different from corresponding analyses of the global soil (target Rocknest) in that the mudstone samples contained detectable phyllosilicate. Here we focus on John Klein and combine CheMin and APXS data to calculate the chemical composition and concentration of the amorphous component. The chemical composition of the amorphous plus smectite component for John Klein was calculated by subtracting the abundance-weighted chemical composition of the individual XRD crystalline components from the bulk composition of John Kline as measured by APXS. The chemical composition of individual crystalline components was determined either by stoichiometry (e.g., hematite and magnetite) or from their unit cell parameters (e.g., feldspar, olivine, and pyroxene). The chemical composition of the amorphous + smectite component (approx 71 wt.% of bulk sample) and bulk chemical composition are similar. In order to calculate the chemical composition of the amorphous component, a chemical composition for the tri-octahedral smectite must be assumed. We selected two tri-octahedral smectites with very different MgO/(FeO + Fe2O3) ratios (34 and 1.3 for SapCa1 and Griffithite, respectively). Relative to bulk sample, the concentration of amorphous and smectite components are 40 and 29 wt.% for SapCa1 and 33 and 36 wt.% for Griffithite. The amount of smectite was calculated by requiring the MgO concentration to be approx 0 wt.% in the amorphous component. Griffithite is the preferred smectite because the position of its 021 diffraction peak is similar to that reported for John Klein. In both cases, the amorphous component has low SiO2 and MgO and high FeO + Fe2O3, P2O5, and SO3 concentrations relative to bulk sample. The chemical composition of the bulk drill fines and XRD crystalline, smectite, and amorphous components implies alteration of an initially basaltic material under near neutral conditions (not acid sulfate), with the sulfate incorporated later as veins of CaSO4 injected into the mudstone.

  8. Amorphous and microcrystalline silicon technology -- 1998

    SciTech Connect

    Schropp, R.; Branz, H.M.; Shimizu, Isamu; Wagner, S.; Hack, M.

    1999-08-01

    Although this new volume from MRS is the 16th in a long-standing and successful series, the focus is no longer limited to hydrogenated amorphous silicon (a-Si:H). The distinction between short- and medium-range order, and between homogeneous and heterogeneous semiconductor materials, is indeed too difficult to maintain. Instead, the volume covers amorphous and microcrystalline silicon from materials physics to new applications. Papers from a joint session with a symposium on ``Flat-Panel Display Materials and Large-Area Processes`` are included. The volume also features special focused sessions on heterogeneous materials, color sensors and radiation imaging, and parameter extraction and device modeling. Topics include: amorphous and polycrystalline thin-film transistors; solar cells; color and X-ray sensors, novel devices, luminescence and sensitization; device modeling and parameter extraction; growth, alloys and clathrates; metastability, hydrogen, atomic and electronic structure; defects and charge transport; and heterogeneous silicon--formation, properties and devices. It includes 152 papers.

  9. Modeling amorphous thin films: Kinetically limited minimization

    NASA Astrophysics Data System (ADS)

    Zawadzki, Paweł P.; Perkins, John; Lany, Stephan

    2014-09-01

    Atomic-scale models of amorphous structures are typically generated using a simulated annealing (SA) quench from a melt simulation protocol. This approach resembles the preparation of bulk glasses, but it may not be suitable for modeling amorphous materials produced using low-energy and low-temperature physical vapor deposition, where a deposited atom induces only local relaxations and no equilibrated melt is formed. To account for such growth conditions, we developed the kinetically limited minimization (KLM) technique, in which an amorphous structure is constructed from a randomly initialized structure in a number of local perturbation-relaxation steps. We compare formation energies as well as short- and medium-range order of KLM- and SA-generated structures of a-In2O3, a-ZnO, and a-Si.

  10. Amorphous metallic films in silicon metallization systems

    NASA Technical Reports Server (NTRS)

    So, F.; Kolawa, E.; Nicolet, M. A.

    1985-01-01

    Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.

  11. Transverse and longitudinal vibrations in amorphous silicon

    NASA Astrophysics Data System (ADS)

    Beltukov, Y. M.; Fusco, C.; Tanguy, A.; Parshin, D. A.

    2015-12-01

    We show that harmonic vibrations in amorphous silicon can be decomposed to transverse and longitudinal components in all frequency range even in the absence of the well defined wave vector q. For this purpose we define the transverse component of the eigenvector with given ? as a component, which does not change the volumes of Voronoi cells around atoms. The longitudinal component is the remaining orthogonal component. We have found the longitudinal and transverse components of the vibrational density of states for numerical model of amorphous silicon. The vibrations are mostly transverse below 7 THz and above 15 THz. In the frequency interval in between the vibrations have a longitudinal nature. Just this sudden transformation of vibrations at 7 THz from almost transverse to almost longitudinal ones explains the prominent peak in the diffusivity of the amorphous silicon just above 7 THz.

  12. Rigid Amorphous Fraction in PLA Electrospun Fibers

    NASA Astrophysics Data System (ADS)

    Cebe, Peggy; Ma, Qian; Simona Cozza, Erika; Pyda, Marek; Mao, Bin; Zhu, Yazhe; Monticelli, Orietta

    2013-03-01

    Electrospun fibers of poly(lactic acid) (PLA) were formed by adopting a high-speed rotating wheel as the counter-electrode. The molecular orientation, crystallization mechanism, and phase structure and transitions of the aligned ES fibers were investigated. Using thermal analysis and wide angle X-ray scattering (WAXS), we evaluated the confinement that exists in as-spun amorphous, and heat-treated semicrystalline, fibers. Differential scanning calorimetry confirmed the existence of a constrained amorphous phase in as-spun aligned fibers, without the presence of crystals or fillers to serve as fixed physical constraints. Using WAXS, for the first time the mesophase fraction, consisting of oriented amorphous PLA chains, was quantitatively characterized in nanofibers. The authors acknowledge support from the National Science Foundation, Polymers Program under grant DMR-0602473. ESC acknowledges a Ph.D. grant supported by Italian Ministry of Education and Scientific Research.

  13. Synthesis and photocurrent of amorphous boron nanowires.

    PubMed

    Ge, Liehui; Lei, Sidong; Hart, Amelia H C; Gao, Guanhui; Jafry, Huma; Vajtai, Robert; Ajayan, Pulickel M

    2014-08-22

    Although theoretically feasible, synthesis of boron nanostructures is challenging due to the highly reactive nature, high melting and boiling points of boron. We have developed a thermal vapor transfer approach to synthesizing amorphous boron nanowire using a solid boron source. The amorphous nature and chemical composition of boron nanowires were characterized by high resolution transmission electron microscopy, selected area electron diffraction, and electron energy loss spectroscopy. Optical properties and photoconduction of boron nanowires have not yet been reported. In our investigation, the amorphous boron nanowire showed much better optical and electrical properties than previously reported photo-response of crystalline boron nanobelts. When excited by a blue LED, the photo/dark current ratio (I/I?) is 1.5 and time constants in the order of tens of seconds. I/I? is 1.17 using a green light. PMID:25061013

  14. Hydrogenated amorphous carbon grains in Comet Halley

    SciTech Connect

    Colangeli, L.; Schwehm, G.; Bussoletti, E.; Fonti, S.; Blanco, A. ESA, Space Science Dept., Noordwijk Osservatorio Astronomico di Capodimonte, Naples Lecce Universita )

    1990-01-01

    Recent IR observations of Comets Halley, Wilson, and Bradfield have shown the existence of an emission feature falling at around 3.4 microns. In this paper, it is shown that a good fit of both the IR continuum and the band can be obtained by assuming a simple thermal emission model based upon the optical properties of hydrogenated amorphous carbon (HAC) grains, measured in laboratory. The best fits of P/Halley's spectra are obtained for HAC dust amounts which appear consistent with the constraints imposed by the observed production rates. The presence of amorphous carbon solid particles is also supported on the basis of in situ mass spectrometry measurements performed by the Vega 1/2 and Giotto spacecraft in the environment of P/Halley. At present, it appears reasonable to suggest that amorphous carbon grains are able to match the observations and can be considered among likely candidates for cometary materials. 51 refs.

  15. Phase transitions in biogenic amorphous calcium carbonate

    PubMed Central

    Gong, Yutao U. T.; Killian, Christopher E.; Olson, Ian C.; Appathurai, Narayana P.; Amasino, Audra L.; Martin, Michael C.; Holt, Liam J.; Wilt, Fred H.; Gilbert, P. U. P. A.

    2012-01-01

    Crystalline biominerals do not resemble faceted crystals. Current explanations for this property involve formation via amorphous phases. Using X-ray absorption near-edge structure (XANES) spectroscopy and photoelectron emission microscopy (PEEM), here we examine forming spicules in embryos of Strongylocentrotus purpuratus sea urchins, and observe a sequence of three mineral phases: hydrated amorphous calcium carbonate (ACCH2O)?dehydrated amorphous calcium carbonate (ACC)?calcite. Unexpectedly, we find ACCH2O-rich nanoparticles that persist after the surrounding mineral has dehydrated and crystallized. Protein matrix components occluded within the mineral must inhibit ACCH2O dehydration. We devised an in vitro, also using XANES-PEEM, assay to identify spicule proteins that may play a role in stabilizing various mineral phases, and found that the most abundant occluded matrix protein in the sea urchin spicules, SM50, stabilizes ACCH2O in vitro. PMID:22492931

  16. Advances in amorphous and nanocrystalline magnetic materials

    NASA Astrophysics Data System (ADS)

    Hasegawa, Ryusuke

    2006-09-01

    Recent advances made in the area of amorphous and nanocrystalline alloys exhibiting high saturation inductions are reviewed. A new chemical composition was identified that achieves a saturation induction of 1.64 T in an iron-based amorphous alloy. This alloy, when used in electrical transformers, shows a much improved performance over the existing amorphous alloy. Nanocrystalline FeCoCuNbSiB alloys are found to have saturation induction levels reaching 1.7 T. These materials are suited for use in sensors and inductors carrying large currents. Some of these nanocrystalline alloys show a BH squareness ratio exceeding 90%, which can be utilized in pulse power devices. Recent developments in the applications of these materials are also pointed out.

  17. Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

    SciTech Connect

    Aikawa, Shinya E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Nabatame, Toshihide

    2015-05-11

    We discuss the environmental instability of amorphous indium oxide (InO{sub x})-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InO{sub x} doped with low and high concentrations of oxygen binder (SiO{sub 2}) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO{sub 2} could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTs with stable electrical properties.

  18. Amorphous water-soluble derivatives of cyclodextrins: nontoxic dissolution enhancing excipients.

    PubMed

    Pitha, J; Pitha, J

    1985-09-01

    Dissolution properties of drugs may be improved by their conversion to an amorphous state or by complexation with cyclodextrins. The present report describes the preparation of cyclodextrin derivatives which are intrinsically amorphous, and water-soluble, and their use as complexation agents. Such derivatives were prepared by condensation of alpha-, beta-, or gamma-cyclodextrins with epoxides (propylene oxide, isobutylene oxide, epichlorohydrin, 1,4-butanediol diglycidyl ether). The condensation products effectively solubilized estradiol, progesterone, or testosterone in water; these solutions, upon freeze-drying, yielded solids which could be directly compressed to tablets which dissolve completely within minutes. Condensation products of cyclodextrins did not have any untoward or toxic effects when administered chronically to mice per os for a 16-week period. PMID:4067854

  19. A hydrogenated amorphous Si/SiC heterojunction phototransistor

    NASA Astrophysics Data System (ADS)

    Hong, J. W.; Chen, Y. W.; Chang, K. C.; Fang, Y. K.; Chang, C. Y.

    1989-10-01

    In order to improve performance of the a-Si:H homojunction phototransistor, a new hydrogenated amorphous Si/SiC heterojunction phototransistor was proposed and successfully fabricated on the ITO (indium-tin oxide)-coated glass substrate. The structure was glass/ITO/a-Si:H( n+- i- ?p+)/a-SiC:H ( i- n+)/Al, in which the thin ?p+a-Si:H layer of narrower band-gap was embedded as the base which formed the heterojunction with the a-SiC:H emitter. This heterojunction device revealed a significant improvement over the previously reported homojunction ones, with an optimal optical gain of 40 and a response speed of 10 ?s. The physical phenomenon which causes this performance improvement is described qualitatively.

  20. A common-gate CMOS inverter with n-channel amorphous silicon thin-film transistor formed on a crystalline PMOSFET

    NASA Astrophysics Data System (ADS)

    Lin, Heng-Chih; Sah, Wen-Jyh; Lee, Si-Chen

    1992-12-01

    A common-gate complementary metal-oxide-semiconductor (CMOS) inverter consisting of an n-channel amorphous silicon (a-Si:H) thin-film transistor on top of 1.2 ?m high Al gate of the crystalline silicon p-channel metal-oxide-semiconductor (PMOS) transistor has been achieved successfully. The success of this inverter demonstrates the feasibility of depositing 3500 thick amorphous silicon material on a surface with roughness in the order of 1.2 ?m. It is found that growing an undoped amorphous silicon layer before the deposition of SiN x insulator is necessary to avoid the permanent destruction of the underlying PMOS due to the stress imposed by the SiN x. The vertical integration of crystalline silicon and amorphous silicon devices to form three-dimensional circuits is a promising technique for future applications in high density memory cell and neural network image sensors.