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Sample records for amorphous silicon epid

  1. Electron beam quality control using an amorphous silicon EPID

    SciTech Connect

    Beck, J. A.; Budgell, G. J.; Roberts, D. A.; Evans, P. M.

    2009-05-15

    An amorphous silicon EPID has been investigated to determine whether it is capable of quality control constancy measurements for linear accelerator electron beams. The EPID grayscale response was found to be extremely linear with dose over a wide dose range and, more specifically, for exposures of 95-100 MU. Small discrepancies of up to 0.8% in linearity were found at 6 MeV (8-15 MeV showed better agreement). The shape of the beam profile was found to be significantly altered by scatter in air over the approximately 60 cm gap between the end of the applicator and the EPID. Nevertheless, relative changes in EPID-measured profile flatness and symmetry were linearly related to changes in these parameters at 95 cm focus to surface distance (FSD) measured using a 2D diode array. Similar results were obtained at 90 deg. and 270 deg. gantry angles. Six months of daily images were acquired and analyzed to determine whether the device is suitable as a constancy checker. EPID output measurements agreed well with daily ion chamber measurements, with a 0.8% standard deviation in the difference between the two measurement sets. When compared to weekly parallel plate chamber measurements, this figure dropped to 0.5%. A Monte Carlo (MC) model of the EPID was created and demonstrated excellent agreement between MC-calculated profiles in water and the EPID at 95 and 157 cm FSD. Good agreement was also found with measured EPID profiles, demonstrating that the EPID provides an accurate measurement of electron profiles. The EPID was thus shown to be an effective method for performing electron beam daily constancy checks.

  2. Experimental investigation of the response of an amorphous silicon EPID to intensity modulated radiotherapy beams

    SciTech Connect

    Greer, Peter B.; Vial, Philip; Oliver, Lyn; Baldock, Clive

    2007-11-15

    The aim of this work was to experimentally determine the difference in response of an amorphous silicon (a-Si) electronic portal imaging device (EPID) to the open and multileaf collimator (MLC) transmitted beam components of intensity modulated radiation therapy (IMRT) beams. EPID dose response curves were measured for open and MLC transmitted (MLC{sub tr}) 10x10 cm{sup 2} beams at central axis and with off axis distance using a shifting field technique. The EPID signal was obtained by replacing the flood-field correction with a pixel sensitivity variation matrix correction. This signal, which includes energy-dependent response, was then compared to ion-chamber measurements. An EPID calibration method to remove the effect of beam energy variations on EPID response was developed for IMRT beams. This method uses the component of open and MLC{sub tr} fluence to an EPID pixel calculated from the MLC delivery file and applies separate radially dependent calibration factors for each component. The calibration procedure does not correct for scatter differences between ion chamber in water measurements and EPID response; these must be accounted for separately with a kernel-based approach or similar method. The EPID response at central axis for the open beam was found to be 1.28{+-}0.03 of the response for the MLC{sub tr} beam, with the ratio increasing to 1.39 at 12.5 cm off axis. The EPID response to MLC{sub tr} radiation did not change with off-axis distance. Filtering the beam with copper plates to reduce the beam energy difference between open and MLC{sub tr} beams was investigated; however, these were not effective at reducing EPID response differences. The change in EPID response for uniform sliding window IMRT beams with MLC{sub tr} dose components from 0.3% to 69% was predicted to within 2.3% using the separate EPID response calibration factors for each dose component. A clinical IMRT image calibrated with this method differed by nearly 30% in high MLC{sub tr

  3. A simple approach to using an amorphous silicon EPID to verify IMRT planar dose maps.

    PubMed

    Lee, Christopher; Menk, Fred; Cadman, Patrick; Greer, Peter B

    2009-03-01

    A simplified method of verifying intensity modulated radiation therapy (IMRT) fields using a Varian aS500 amorphous silicon electronic portal imaging device (EPID) is demonstrated. Unlike previous approaches, it does not involve time consuming or complicated analytical processing of the data. The central axis pixel response of the EPID, as well as the profile characteristics obtained from images acquired with a 6 MV photon beam, was examined as a function of field size. Ion chamber measurements at various depths in a water phantom were then collected and it was found that at a specific depth d(ref), the dose response and profile characteristics closely matched the results of the EPID analysis. The only manipulation required to be performed on the EPID images was the multiplication of a matrix of off axis ratio values to remove the effect of the flood field calibration. Similarly, d(ref) was found for 18 MV. Planar dose maps at d(ref) in a water phantom for a bar pattern, a strip pattern, and 14 clinical IMRT fields from two patient cases each being from a separate anatomical region, i.e., head and neck as well as the pelvis, for both energies were generated by the Pinnacle planning system (V7.4). EPID images of these fields were acquired and converted to planar dose maps and compared directly with the Pinnacle planar dose maps. Radiographic film dosimetry and a MapCHECK dosimetry device (Sun Nuclear Corporation, Melbourne, FL) were used as an independent verification of the dose distribution. Gamma analysis of the EPID, film, and Pinnacle planar dose maps generated for the clinical IMRT fields showed that approximately 97% of all points passed using a 3% dose/3 mm DTA tolerance test. Based on the range of fields studied, the author's results appear to justify using this approach as a method to verify dose distributions calculated on a treatment planning system, including complex intensity modulated fields. PMID:19378759

  4. Dosimetric properties of an amorphous silicon EPID for verification of modulated electron radiotherapy

    SciTech Connect

    Chatelain, Cecile; Vetterli, Daniel; Henzen, Dominik; Favre, Pascal; Fix, Michael K.; Manser, Peter; Morf, Daniel; Scheib, Stefan

    2013-06-15

    Purpose: To investigate the dosimetric properties of an electronic portal imaging device (EPID) for electron beam detection and to evaluate its potential for quality assurance (QA) of modulated electron radiotherapy (MERT). Methods: A commercially available EPID was used to detect electron beams shaped by a photon multileaf collimator (MLC) at a source-surface distance of 70 cm. The fundamental dosimetric properties such as reproducibility, dose linearity, field size response, energy response, and saturation were investigated for electron beams. A new method to acquire the flood-field for the EPID calibration was tested. For validation purpose, profiles of open fields and various MLC fields (square and irregular) were measured with a diode in water and compared to the EPID measurements. Finally, in order to use the EPID for QA of MERT delivery, a method was developed to reconstruct EPID two-dimensional (2D) dose distributions in a water-equivalent depth of 1.5 cm. Comparisons were performed with film measurement for static and dynamic monoenergy fields as well as for multienergy fields composed by several segments of different electron energies. Results: The advantageous EPID dosimetric properties already known for photons as reproducibility, linearity with dose, and dose rate were found to be identical for electron detection. The flood-field calibration method was proven to be effective and the EPID was capable to accurately reproduce the dose measured in water at 1.0 cm depth for 6 MeV, 1.3 cm for 9 MeV, and 1.5 cm for 12, 15, and 18 MeV. The deviations between the output factors measured with EPID and in water at these depths were within {+-}1.2% for all the energies with a mean deviation of 0.1%. The average gamma pass rate (criteria: 1.5%, 1.5 mm) for profile comparison between EPID and measurements in water was better than 99% for all the energies considered in this study. When comparing the reconstructed EPID 2D dose distributions at 1.5 cm depth to film

  5. 2D lag and signal nonlinearity correction in an amorphous silicon EPID and their impact on pretreatment dosimetric verification

    SciTech Connect

    Warkentin, B.; Rathee, S.; Steciw, S.

    2012-11-15

    Purpose: This investigation provides measurements of signal lag and nonlinearity separately for the Varian aS500 electronic portal imaging device (EPID), and an algorithm to correct for these effects in 2D; their potential impact on intensity modulated radiation therapy (IMRT) verification is also investigated. The authors quantify lag, as a function of both delivered monitor units (MU) and time, by using a range of MUs delivered at a clinically used rate of 400 MU/min. Explicit cumulative lag curves are thus determined for a range of MUs and times between the end of irradiation and the end of image acquisition. Signal nonlinearity is also investigated as a function of total MUs delivered. The family of cumulative lag curves and signal nonlinearity are then used to determine their effects on dynamic multileaf collimator (MLC) (IMRT) deliveries, and to correct for theses effects in 2D. Methods: Images acquired with an aS500 EPID and Varis Portal-Vision software were used to quantify detector lag and signal-nonlinearity. For the signal lag investigation, Portal-Vision's service monitor was used to acquire EPID images at a rate of 8 frames/s. The images were acquired during irradiation and 66 s thereafter, by inhibiting the M-holdoff-In signal of the Linac for a range of 4.5-198.5 MUs. Relative cumulative lag was calculated by integrating the EPID signal for a time after beam-off, and normalizing this to the integrated EPID signal accumulated during radiation. Signal nonlinearity was studied by acquiring 10 Multiplication-Sign 10 cm{sup 2} open-field EPID images in 'integrated image' mode for a range of 2-500 MUs, and normalized to the 100 MU case. All data were incorporated into in-house written software to create a 2D correction map for these effects, using the field's MLC file and a field-specific calculated 2D 'time-map,' which keeps track of the time elapsed from the last fluence delivered at each given point in the image to the end of the beam delivery. Results

  6. Developments in megavoltage cone beam CT with an amorphous silicon EPID: reduction of exposure and synchronization with respiratory gating.

    PubMed

    Sillanpaa, J; Chang, J; Mageras, G; Riem, H; Ford, E; Todor, D; Ling, C C; Amols, H

    2005-03-01

    We have studied the feasibility of a low-dose megavoltage cone beam computed tomography (MV CBCT) system for visualizing the gross tumor volume in respiratory gated radiation treatments of nonsmall-cell lung cancer. The system consists of a commercially available linear accelerator (LINAC), an amorphous silicon electronic portal imaging device, and a respiratory gating system. The gantry movement and beam delivery are controlled using dynamic beam delivery toolbox, a commercial software package for executing scripts to control the LINAC. A specially designed interface box synchronizes the LINAC, image acquisition electronics, and the respiratory gating system. Images are preprocessed to remove artifacts due to detector sag and LINAC output fluctuations. We report on the output, flatness, and symmetry of the images acquired using different imaging parameters. We also examine the quality of three-dimensional (3D) tomographic reconstruction with projection images of anthropomorphic thorax, contrast detail, and motion phantoms. The results show that, with the proper choice of imaging parameters, the flatness and symmetry are reasonably good with as low as three beam pulses per projection image. Resolution of 5% electron density differences is possible in a contrast detail phantom using 100 projections and 30 MU. Synchronization of image acquisition with simulated respiration also eliminated motion artifacts in a moving phantom, demonstrating the system's capability for imaging patients undergoing gated radiation therapy. The acquisition time is limited by the patient's respiration (only one image per breathing cycle) and is under 10 min for a scan of 100 projections. In conclusion, we have developed a MV CBCT system using commercially available components to produce 3D reconstructions, with sufficient contrast resolution for localizing a simulated lung tumor, using a dose comparable to portal imaging. PMID:15839355

  7. Epid Dosimetry

    NASA Astrophysics Data System (ADS)

    Greer, Peter B.; Vial, Philip

    2011-05-01

    Electronic portal imaging devices (EPIDs) were introduced originally for patient position verification. The idea of using EPIDs for dosimetry was realised in the 1980s. Little was published on the topic until the mid 1990's, when the interest in EPIDs for dosimetry increased rapidly and continues to grow. The increasing research on EPID dosimetry coincided with the introduction of intensity modulated radiation therapy (IMRT). EPIDs are well suited to IMRT dosimetry because they are high resolution, two-dimensional (2D) digital detectors. They are also pre-existing on almost all modern linear accelerators. They generally show a linear response to increasing dose. Different types of EPIDs have been clinically implemented, and these have been described in several review papers. The current generation of commercially available EPIDs are indirect detection active matrix flat panel imagers, also known as amorphous silicon (a-Si) EPIDs. Disadvantages of a-Si EPIDs for dosimetry include non-water equivalent construction materials, and the energy sensitivity and optical scatter of the phosphor scintillators used to create optical signal from the megavoltage beam. This report discusses current knowledge regarding a-Si EPIDs for dosimetry.

  8. Epid Dosimetry

    SciTech Connect

    Greer, Peter B.; Vial, Philip

    2011-05-05

    Electronic portal imaging devices (EPIDs) were introduced originally for patient position verification. The idea of using EPIDs for dosimetry was realised in the 1980s. Little was published on the topic until the mid 1990's, when the interest in EPIDs for dosimetry increased rapidly and continues to grow. The increasing research on EPID dosimetry coincided with the introduction of intensity modulated radiation therapy (IMRT). EPIDs are well suited to IMRT dosimetry because they are high resolution, two-dimensional (2D) digital detectors. They are also pre-existing on almost all modern linear accelerators. They generally show a linear response to increasing dose. Different types of EPIDs have been clinically implemented, and these have been described in several review papers. The current generation of commercially available EPIDs are indirect detection active matrix flat panel imagers, also known as amorphous silicon (a-Si) EPIDs. Disadvantages of a-Si EPIDs for dosimetry include non-water equivalent construction materials, and the energy sensitivity and optical scatter of the phosphor scintillators used to create optical signal from the megavoltage beam. This report discusses current knowledge regarding a-Si EPIDs for dosimetry.

  9. Hydrogen in amorphous silicon

    SciTech Connect

    Peercy, P. S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH/sub 1/) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon.

  10. Amorphous silicon photovoltaic devices

    SciTech Connect

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  11. Amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  12. Amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  13. Amorphous silicon ionizing particle detectors

    DOEpatents

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  14. Amorphous silicon ionizing particle detectors

    DOEpatents

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  15. Compensated amorphous silicon solar cell

    DOEpatents

    Devaud, Genevieve

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  16. Perspective on photovoltaic amorphous silicon

    SciTech Connect

    Luft, W.; Stafford, B.; von Roedern, B.

    1992-05-01

    Amorphous silicon is a thin film option that has the potential for a cost-effective product for large-scale utility photovoltaics application. The initial efficiencies for single-junction and multijunction amorphous silicon cells and modules have increased significantly over the past 10 years. The emphasis of research and development has changed to stabilized efficiency, especially that of multijunction modules. NREL has measured 6.3%--7.2% stabilized amorphous silicon module efficiencies for US products, and 8.1% stable efficiencies have been reported by Fuji Electric. This represents a significant increase over the stabilized efficiencies of modules manufactured only a few years ago. An increasing portion of the amorphous silicon US government funding is now for manufacturing technology development to reduce cost. The funding for amorphous silicon for photovoltaics by Japan over the last 5 years has been about 50% greater than that in the United State, and by Germany in the last 2--3 years more than twice that of the US Amorphous silicon is the only thin-film technology that is selling large-area commercial modules. The cost for amorphous silicon modules is now in the $4.50 range; it is a strong function of plant production capacity and is expected to be reduced to $1.00--1.50/W{sub p} for plants with 10 MW/year capacities. 10 refs.

  17. Perspective on photovoltaic amorphous silicon

    SciTech Connect

    Luft, W.; Stafford, B.; von Roedern, B. )

    1992-12-01

    Amorphous silicon is a thin film option that has the potential for a cost-effective product for large-scale utility photovoltaics application. The initial efficiencies for single-junction and multijunction amorphous silicon cells and modules have increased significantly over the past 10 years. The emphasis of research and development has changed to stabilized efficiency, especially that of multijunction modules. NREL has measured 6.3%--7.2% stabilized amorphous silicon module efficiencies for U.S. products, and 8.1% stable efficiencies have been reported by Fuji Electric. This represents a significant increase over the stabilized efficiencies of modules manufactured only a few years ago. An increasing portion of the amorphous silicon U.S. government funding is now for manufacturing technology development to reduce cost. The funding for amorphous silicon for photovoltaics by Japan over the last 5 years has been about 50% greater than that in the United States, and by Germany in the last 2--3 years more than twice that of the U.S. Amorphous silicon is the only thin-film technology that is selling large-area commercial modules. The cost for amorphous silicon modules is now in the $4.50 range; it is a strong function of plant production capacity and is expected to be reduced to $1.00--1.50/W[sub [ital p

  18. Plasma Deposition of Amorphous Silicon

    NASA Technical Reports Server (NTRS)

    Calcote, H. F.

    1982-01-01

    Strongly adhering films of silicon are deposited directly on such materials as Pyrex and Vycor (or equivalent materials) and aluminum by a non-equilibrium plasma jet. Amorphous silicon films are formed by decomposition of silicon tetrachloride or trichlorosilane in the plasma. Plasma-jet technique can also be used to deposit an adherent silicon film on aluminum from silane and to dope such films with phosphorus. Ability to deposit silicon films on such readily available, inexpensive substrates could eventually lead to lower cost photovoltaic cells.

  19. Tandem junction amorphous silicon solar cells

    DOEpatents

    Hanak, Joseph J.

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  20. Exoelectron analysis of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Dekhtyar, Yu. D.; Vinyarskaya, Yu. A.

    1994-04-01

    The method based on registration of photothermostimulated exoelectron emission (PTSE) is used in the proposed new field of investigating the structural defects in amorphous silicon (a-Si). This method can be achieved if the sample under investigation is simultaneously heated and illuminated by ultraviolet light. The mechanism of PTSE from a-Si has been studied in the case of a hydrogenized amorphous silicon (a-Si:H) film grown by glow discharge method. The electronic properties and annealing of defects were analyzed in the study. It has been shown from the results that the PTSE from a-Si:H takes place as a prethreshold single-photon external photoeffect. The exoemission spectroscopy of a-Si:H was shown to be capable in the study of thermally and optically stimulated changes in the electronic structure of defects, their annealing, as well as diffusion of atomic particles, such as hydrogen.

  1. Narrow band gap amorphous silicon semiconductors

    DOEpatents

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  2. Amorphous-silicon cell reliability testing

    NASA Technical Reports Server (NTRS)

    Lathrop, J. W.

    1985-01-01

    The work on reliability testing of solar cells is discussed. Results are given on initial temperature and humidity tests of amorphous silicon devices. Calibration and measurement procedures for amorphous and crystalline cells are given. Temperature stress levels are diagrammed.

  3. Amorphous silicon solar cell allowing infrared transmission

    DOEpatents

    Carlson, David E.

    1979-01-01

    An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

  4. Studies of hydrogenated amorphous silicon

    SciTech Connect

    Bishop, S G; Carlos, W E

    1984-07-01

    This report discusses the results of probing the defect structure and bonding of hydrogenated amorphous silicon films using both nuclear magnetic resonance (NMR) and electron spin resonance (ESR). The doping efficiency of boron in a-Si:H was found to be less than 1%, with 90% of the boron in a threefold coordinated state. On the other hand, phosphorus NMR chemical shift measurements yielded a ration of threefold to fourfold P sites of roughly 4 to 1. Various resonance lines were observed in heavily boron- and phosphorus-doped films and a-SiC:H alloys. These lines were attributed to band tail states on twofold coordinated silicon. In a-SiC:H films, a strong resonance was attributed to dangling bonds on carbon atoms. ESR measurements on low-pressure chemical-vapor-deposited (LPCVD) a-Si:H were performed on samples. The defect density in the bulk of the films was 10/sup 17//cc with a factor of 3 increase at the surface of the sample. The ESR spectrum of LPCVD-prepared films was not affected by prolonged exposure to strong light. Microcrystalline silicon samples were also examined. The phosphorus-doped films showed a strong signal from the crystalline material and no resonance from the amorphous matrix. This shows that phosphorus is incorporated in the crystals and is active as a dopant. No signal was recorded from the boron-doped films.

  5. Method of producing hydrogenated amorphous silicon film

    DOEpatents

    Wiesmann, Harold J.

    1980-01-01

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

  6. Tests Of Amorphous-Silicon Photovoltaic Modules

    NASA Technical Reports Server (NTRS)

    Ross, Ronald G., Jr.

    1988-01-01

    Progress in identification of strengths and weaknesses of amorphous-silicon technology detailed. Report describes achievements in testing reliability of solar-power modules made of amorphous-silicon photovoltaic cells. Based on investigation of modules made by U.S. manufacturers. Modules subjected to field tests, to accelerated-aging tests in laboratory, and to standard sequence of qualification tests developed for modules of crystalline-silicon cells.

  7. Electron tunnelling into amorphous germanium and silicon.

    NASA Technical Reports Server (NTRS)

    Smith, C. W.; Clark, A. H.

    1972-01-01

    Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

  8. Amorphous silicon-tellurium alloys

    NASA Astrophysics Data System (ADS)

    Shufflebotham, P. K.; Card, H. C.; Kao, K. C.; Thanailakis, A.

    1986-09-01

    Amorphous silicon-tellurium alloy thin films were fabricated by coevaporation over the composition range of 0-82 at. % Te. The electronic and optical properties of these films were systematically investigated over this same range of composition. The optical gap of these films was found to decrease monotonically with increasing Te content. Conduction near room temperature was due to extended state conduction, while variable range hopping dominated below 250 K. The incorporation of Te in concentrations of less than 1 at. % was found to produce an increase in the density of localized states at the Fermi level and a decrease in the activation energy. This was attributed to the Te being incorporated as a substitutional, fourfold coordinated, double donor in a-Si. At approximately 60 at. % Te, a decrease in the density of localized states at the Fermi level, and an increase in the activation energy and photoresponse was indicated. This was attributed to the possible formation of a less defective a-Si:Te compound.

  9. Atomic-scale disproportionation in amorphous silicon monoxide.

    PubMed

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-01-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material. PMID:27172815

  10. Atomic-scale disproportionation in amorphous silicon monoxide

    PubMed Central

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-01-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material. PMID:27172815

  11. Atomic-scale disproportionation in amorphous silicon monoxide

    NASA Astrophysics Data System (ADS)

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-05-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material.

  12. Cooling of hot electrons in amorphous silicon

    SciTech Connect

    Vanderhaghen, R.; Hulin, D.; Cuzeau, S.; White, J.O.

    1997-07-01

    Measurements of the cooling rate of hot carriers in amorphous silicon are made with a two-pump, one-probe technique. The experiment is simulated with a rate-equation model describing the energy transfer between a population of hot carriers and the lattice. An energy transfer rate proportional to the temperature difference is found to be consistent with the experimental data while an energy transfer independent of the temperature difference is not. This contrasts with the situation in crystalline silicon. The measured cooling rates are sufficient to explain the difficulty in observing avalanche effects in amorphous silicon.

  13. Amorphous silicon detectors in positron emission tomography

    SciTech Connect

    Conti, M. Lawrence Berkeley Lab., CA ); Perez-Mendez, V. )

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  14. Amorphous Silicon Based Neutron Detector

    SciTech Connect

    Xu, Liwei

    2004-12-12

    Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield using low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: · High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; · Various single-junction and double junction detector devices have been fabricated; · The detector devices fabricated have been systematically tested and analyzed. · Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies

  15. Transverse and longitudinal vibrations in amorphous silicon

    NASA Astrophysics Data System (ADS)

    Beltukov, Y. M.; Fusco, C.; Tanguy, A.; Parshin, D. A.

    2015-12-01

    We show that harmonic vibrations in amorphous silicon can be decomposed to transverse and longitudinal components in all frequency range even in the absence of the well defined wave vector q. For this purpose we define the transverse component of the eigenvector with given ω as a component, which does not change the volumes of Voronoi cells around atoms. The longitudinal component is the remaining orthogonal component. We have found the longitudinal and transverse components of the vibrational density of states for numerical model of amorphous silicon. The vibrations are mostly transverse below 7 THz and above 15 THz. In the frequency interval in between the vibrations have a longitudinal nature. Just this sudden transformation of vibrations at 7 THz from almost transverse to almost longitudinal ones explains the prominent peak in the diffusivity of the amorphous silicon just above 7 THz.

  16. Neutron irradiation induced amorphization of silicon carbide

    SciTech Connect

    Snead, L.L.; Hay, J.C.

    1998-09-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 {times} 10{sup 25} n/m{sup 2}. Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density ({minus}10.8%), elastic modulus as measured using a nanoindentation technique ({minus}45%), hardness as measured by nanoindentation ({minus}45%), and standard Vickers hardness ({minus}24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C.

  17. Structural relaxation of amorphous silicon carbide.

    PubMed

    Ishimaru, Manabu; Bae, In-Tae; Hirotsu, Yoshihiko; Matsumura, Syo; Sickafus, Kurt E

    2002-07-29

    We have examined amorphous structures of silicon carbide (SiC) using both transmission electron microscopy and a molecular-dynamics approach. Radial distribution functions revealed that amorphous SiC contains not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds. The ratio of heteronuclear to homonuclear bonds was found to change upon annealing, suggesting that structural relaxation of the amorphous SiC occurred. Good agreement was obtained between the simulated and experimentally measured radial distribution functions. PMID:12144449

  18. Inverted amorphous silicon solar cell utilizing cermet layers

    DOEpatents

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  19. Amorphous metallic films in silicon metallization systems

    NASA Technical Reports Server (NTRS)

    Nicolet, M. A.; Kattelus, H.; So, F.

    1984-01-01

    The general objective was to determine the potential of amorphous metallic thin films as a means of improving the stability of metallic contacts to a silicon substrate. The specific objective pursued was to determine the role of nitrogen in the formation and the resulting properties of amorphous thin-film diffusion barriers. Amorphous metallic films are attractive as diffusion barriers because of the low atomic diffusivity in these materials. Previous investigations revealed that in meeting this condition alone, good diffusion barriers are not necessarily obtained, because amorphous films can react with an adjacent medium (e.g., Si, Al) before they recrystallize. In the case of a silicon single-crystalline substrate, correlation exists between the temperature at which an amorphous metallic binary thin film reacts and the temperatures at which the films made of the same two metallic elements react individually. Amorphous binary films made of Zr and W were investigated. Both react with Si individually only at elevated temperatures. It was confirmed that such films react with Si only above 700 C when annealed in vacuum for 30 min. Amorphous W-N films were also investigated. They are more stable as barriers between Al and Si than polycrystalline W. Nitrogen effectively prevents the W-Al reaction that sets in at 500 C with polycrystalline W.

  20. New Amorphous Silicon Alloy Systems

    NASA Astrophysics Data System (ADS)

    Kapur, Mridula N.

    1990-01-01

    The properties of hydrogenated amorphous silicon (a-Si:H) have been modified by alloying with Al, Ga and S respectively. The Al and Ga alloys are in effect quaternary alloys as they were fabricated in a carbon-rich discharge. The alloys were prepared by the plasma assisted chemical vapor deposition (PACVD) method. This method has several advantages, the major one being the relatively low defect densities of the resulting materials. The PACVD system used to grow the alloy films was designed and constructed in the laboratory. It was first tested with known (a-Si:H and a-Si:As:H) materials. Thus, it was established that device quality alloy films could be grown with the home-made PACVD setup. The chemical composition of the alloys was characterized by secondary ion mass spectrometry (SIMS), and electron probe microanalysis (EPMA). The homogeneous nature of hydrogen distribution in the alloys was established by SIMS depth profile analysis. A quantitative analysis of the bulk elemental content was carried out by EPMA. The analysis indicated that the alloying element was incorporated in the films more efficiently at low input gas concentrations than at the higher concentrations. A topological model was proposed to explain the observed behavior. The optical energy gap of the alloys could be varied in the 0.90 to 1.92 eV range. The Al and Ga alloys were low band gap materials, whereas alloying with S had the effect of widening the energy gap. It was observed that although the Si-Al and Si-Ga alloys contained significant amounts of C and H, the magnitude of the energy gap was determined by the metallic component. The various trends in optical properties could be related to the binding characteristics of the respective alloy systems. A quantitative explanation of the results was provided by White's tight binding model. The dark conductivity-temperature dependence of the alloys was examined. A linear dependence was observed for the Al and Ga systems. Electronic conduction in

  1. Metal electrode for amorphous silicon solar cells

    DOEpatents

    Williams, Richard

    1983-01-01

    An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

  2. Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

    DOEpatents

    Carlson, David E.

    1982-01-01

    An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

  3. Amorphization of Silicon Carbide by Carbon Displacement

    SciTech Connect

    Devanathan, Ram; Gao, Fei; Weber, William J.

    2004-05-10

    We have used molecular dynamics simulations to examine the possibility of amorphizing silicon carbide (SiC) by exclusively displacing C atoms. At a defect generation corresponding to 0.2 displacements per atom, the enthalpy surpasses the level of melt-quenched SiC, the density decreases by about 15%, and the radial distribution function shows a lack of long-range order. Prior to amorphization, the surviving defects are mainly C Frenkel pairs (67%), but Si Frenkel pairs (18%) and anti-site defects (15%) are also present. The results indicate that SiC can be amorphized by C sublattice displacements. Chemical short-range disorder, arising mainly from interstitial production, plays a significant role in the amorphization.

  4. Crystalline to amorphous transformation in silicon

    SciTech Connect

    Cheruvu, S.M.

    1982-09-01

    In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects.

  5. Characterization of an Indirect-Detection Amorphous Silicon Detector for Dosimetric Measurement of Intensity Modulated Photon Fields

    NASA Astrophysics Data System (ADS)

    Bailey, Daniel Wayne

    Indirect-detection amorphous silicon electronic imagers show much promise for measurement of radiation dose, particularly for pre-treatment verification of patient-specific intensity modulated radiotherapy plans. These instruments, commonly known as Electronic Portal Imaging Devices (EPIDs), have high data density, large detecting area, convenient electronic read-out, excellent positional reproducibility, and are quickly becoming standard equipment on today's medical megavoltage linear accelerators. However, because these devices were originally intended to be digital radiograph imagers and not dosimeters, the modeling, calibration, and prediction of their response to dose carries a number of challenges. For instance, EPID dose images exhibit off-axis dose errors of up to 18% with increasing distance from the central axis of the imager (as compared to dose predictions calculated by a commercially available treatment planning system). Furthermore, these off-axis errors are asymmetric, with higher errors in the in-plane direction than in the cross-plane direction. In this work, methods are proposed to account for EPID off-axis effects by precisely calculating off-axis output factors from experimental measurements to increase the accuracy of EPID absolute dose measurement. Using these methods, dose readings acquired over the entire surface of the detector agree to within 2% accuracy as compared to respective EPID dose predictions. Similarly, the percentage of measured dose points that agree with respective calculated dose points (using 3%, 3 mm criteria) improves by as much as 60% for off-axis intensity modulated photon fields. Furthermore, a number of clinical applications of EPID dosimetry are investigated, including pixel response constancy, the effect of data density on a common metric for quantitatively comparing measured vs. calculated dose, and the implementation of an electronic portal dosimetry program for radiotherapy quality assurance.

  6. Ion bombardment and disorder in amorphous silicon

    SciTech Connect

    Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

    1997-07-01

    The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects.

  7. Investigations on silicon/amorphous-carbon and silicon/nanocrystalline palladium/ amorphous-carbon interfaces.

    PubMed

    Roy, M; Sengupta, P; Tyagi, A K; Kale, G B

    2008-08-01

    Our previous work revealed that significant enhancement in sp3-carbon content of amorphous carbon films could be achieved when grown on nanocrystalline palladium interlayer as compared to those grown on bare silicon substrates. To find out why, the nature of interface formed in both the cases has been investigated using Electron Probe Micro Analysis (EPMA) technique. It has been found that a reactive interface in the form of silicon carbide and/silicon oxy-carbide is formed at the interface of silicon/amorphous-carbon films, while palladium remains primarily in its native form at the interface of nanocrystalline palladium/amorphous-carbon films. However, there can be traces of dissolved oxygen within the metallic layer as well. The study has been corroborated further from X-ray photoelectron spectroscopic studies. PMID:19049221

  8. Dosimetry in radiotherapy using a-Si EPIDs: Systems, methods, and applications focusing on 3D patient dose estimation

    NASA Astrophysics Data System (ADS)

    McCurdy, B. M. C.

    2013-06-01

    An overview is provided of the use of amorphous silicon electronic portal imaging devices (EPIDs) for dosimetric purposes in radiation therapy, focusing on 3D patient dose estimation. EPIDs were originally developed to provide on-treatment radiological imaging to assist with patient setup, but there has also been a natural interest in using them as dosimeters since they use the megavoltage therapy beam to form images. The current generation of clinically available EPID technology, amorphous-silicon (a-Si) flat panel imagers, possess many characteristics that make them much better suited to dosimetric applications than earlier EPID technologies. Features such as linearity with dose/dose rate, high spatial resolution, realtime capability, minimal optical glare, and digital operation combine with the convenience of a compact, retractable detector system directly mounted on the linear accelerator to provide a system that is well-suited to dosimetric applications. This review will discuss clinically available a-Si EPID systems, highlighting dosimetric characteristics and remaining limitations. Methods for using EPIDs in dosimetry applications will be discussed. Dosimetric applications using a-Si EPIDs to estimate three-dimensional dose in the patient during treatment will be overviewed. Clinics throughout the world are implementing increasingly complex treatments such as dynamic intensity modulated radiation therapy and volumetric modulated arc therapy, as well as specialized treatment techniques using large doses per fraction and short treatment courses (ie. hypofractionation and stereotactic radiosurgery). These factors drive the continued strong interest in using EPIDs as dosimeters for patient treatment verification.

  9. Deuterium in crystalline and amorphous silicon

    SciTech Connect

    Borzi, R.; Ma, H.; Fedders, P.A.; Leopold, D.J.; Norberg, R.E.; Boyce, J.B.; Johnson, N.M.; Ready, S.E.; Walker, J.

    1997-07-01

    The authors report deuteron magnetic resonance (DMR) measurements on aged deuterium-implanted single crystal n-type silicon and comparisons with amorphous silicon spectra. The sample film was prepared six years ago by deuteration from a-D{sub 2} plasma and evaluated by a variety of experimental methods. Deuterium has been evolving with time and the present DMR signal shows a smaller deuteron population. A doublet from Si-D configurations along (111) has decreased more than have central molecular DMR components, which include 47 and 12 kHz FWHM gaussians. Transient DMR magnetization recoveries indicate spin lattice relaxation to para-D{sub 2} relaxation centers.

  10. Mechanism for hydrogen diffusion in amorphous silicon

    SciTech Connect

    Biswas, R.; Li, Q.; Pan, B.C.; Yoon, Y.

    1998-01-01

    Tight-binding molecular-dynamics calculations reveal a mechanism for hydrogen diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicons and breaking their Si{endash}Si bonds. The diffusing hydrogen carries with it a newly created dangling bond. These intermediate transporting states are densely populated in the network, have lower energies than H at the center of stretched Si{endash}Si bonds, and can play a crucial role in hydrogen diffusion. {copyright} {ital 1998} {ital The American Physical Society}

  11. Self-Diffusion in Amorphous Silicon

    NASA Astrophysics Data System (ADS)

    Strauß, Florian; Dörrer, Lars; Geue, Thomas; Stahn, Jochen; Koutsioubas, Alexandros; Mattauch, Stefan; Schmidt, Harald

    2016-01-01

    The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on 29Si/natSi heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4 ±0.3 ) eV . In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C , which can be interpreted as the consequence of a high diffusion entropy.

  12. Self-Diffusion in Amorphous Silicon.

    PubMed

    Strauß, Florian; Dörrer, Lars; Geue, Thomas; Stahn, Jochen; Koutsioubas, Alexandros; Mattauch, Stefan; Schmidt, Harald

    2016-01-15

    The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on ^{29}Si/^{nat}Si heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C, which can be interpreted as the consequence of a high diffusion entropy. PMID:26824552

  13. Dynamical models of hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Mousseau, Normand; Lewis, Laurent J.

    1991-04-01

    The results of our molecular-dynamics simulation of bulk hydrogenated amorphous silicon using empirical potentials are presented. More specifically, we discuss a dynamical procedure for incorporating hydrogen into a pure amorphous silicon matrix, which is derived from the concept of floating bonds put forward by Pantelides [Phys. Rev. Lett. 57, 2979 (1986)]. The structures resulting from this model are compared with those obtained with use of a static approach recently developed by us. This method exhibits considerable improvement over the previous one and, in particular, unambiguously reveals the strain-relieving role of hydrogen. While the former model leads to substantial overcoordination, the present one results in almost perfect tetrahedral bonding, with an average coordination number Z=4.03, the lowest value ever achieved using a Stillinger-Weber potential. The simulations are also used to calculate the vibrational densities of states, which are found to be in good accord with corresponding neutron-scattering measurements.

  14. Amorphous metallic films in silicon metallization systems

    NASA Technical Reports Server (NTRS)

    So, F.; Kolawa, E.; Nicolet, M. A.

    1985-01-01

    Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.

  15. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  16. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Kaplan, Selig N.; Perez-Mendez, Victor

    1992-01-01

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  17. Amorphous silicon/polycrystalline thin film solar cells

    SciTech Connect

    Ullal, H.S.

    1991-03-13

    An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

  18. Amorphous molybdenum silicon superconducting thin films

    SciTech Connect

    Bosworth, D. Sahonta, S.-L.; Barber, Z. H.; Hadfield, R. H.

    2015-08-15

    Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using W{sub x}Si{sub 1−x}, though other amorphous superconductors such as molybdenum silicide (Mo{sub x}Si{sub 1−x}) offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc) reaches a maximum of 7.6 K at a composition of Mo{sub 83}Si{sub 17}. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz), there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  19. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, James L.

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  20. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  1. Hydrogenated amorphous silicon-germanium alloys

    SciTech Connect

    Luft, W.

    1988-02-01

    This report describes the effects of the germanium fraction in hydrogenated amorphous silicon-germanium alloys on various parameters, especially those that are indicators of film quality, and the impact of deposition methods, feedgas mixtures, and other deposition parameters on a SiGe:H and a-SiGe:H:F film characteristics and quality. Literature data show the relationship between germanium content, hydrogen content, deposition method (various glow discharges and CVD), feedgas lmixture, and other parameters and properties, such as optical band gap, dark and photoconductivities, photosensitivity, activation energy, Urbach parameter, and spin density. Some of these are convenient quality indicators; another is the absence of microstructure. Examining RF glow discharge with both a diode and triode geometry, DC proximity glow discharge, microwave glow discharge, and photo-CVD, using gas mixtures such as hydrogen-diluted and undiluted mixtures of silane/germane, disilane/germane, silane/germaniumtetrafluoride, and others, it was observed that hydrogen dilution (or inert gas dilution) is essential in achieving high photosensitivity in silicon-germanium alloys (in contradistinction to amorphous hydrogenated silicon). Hydrogen dilution results in a higher photosensitivity than do undiluted gas mixtures. 81 refs., 42 figs., 7 tabs.

  2. Dose calibration of EPIDs for segmented IMRT dosimetry.

    PubMed

    Deshpande, Shrikant; Xing, Aitang; Holloway, Lois; Metcalfe, Peter; Vial, Philip

    2014-01-01

    The purpose of this study was to investigate the dose response of amorphous silicon (a-Si) electronic portal imaging devices (EPIDs) under different acquisi- tion settings for both open jaw defined fields and segmented intensity-modulated radiation therapy (IMRT) fields. Four different EPIDs were used. Two Siemens and one Elekta plus a standalone Perkin Elmer research EPID. Each was operated with different acquisition systems and settings. Dose response linearity was measured for open static jaw defined fields and 'simple' segmented IMRT fields for a range of equipment and system settings. Six 'simple' segmented IMRT fields were used. The segments of each IMRT field were fixed at 10 × 10 cm2 field size with equal MU per segment, each field having a total of 20 MU. Simultaneous measurements with an ionization chamber array (ICA) and EPID were performed to separate beam and detector response characteristics. Three different pixel calibration meth- ods were demonstrated and compared for an example 'clinical IMRT field'. The dose response with the Elekta EPID for 'simple' segmented IMRT fields versus static fields agreed to within 2.5% for monitor unit (MU) ≥ 2. The dose response for the Siemens systems was difficult to interpret due to the poor reproducibility for segmented delivery, at MU ≤ 5, which was not observed with the standalone research EPID nor ICA on the same machine. The dose response measured under different acquisition settings and different linac/EPID combinations matched closely (≤ 1%), except for the Siemens EPID. Clinical IMRT EPID dosimetry implemented with the different pixel-to-dose calibration methods indicated that calibration at 20 MU provides equivalent results to implementing a ghosting correction model. The nonlinear dose response was consistent across both clinical EPIDs and the standalone research EPID, with the exception of the poor reproducibility seen with Siemens EPID images of IMRT fields. The nonlinear dose response was

  3. Radiation resistance studies of amorphous silicon films

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.; Payson, J. Scott

    1989-01-01

    Hydrogenated amorphous silicon thin films were irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15 cm(-2). The films were characterized using photothermal deflection spectroscopy and photoconductivity measurements. The investigations show that the radiation introduces sub-band-gap states 1.35 eV below the conduction band and the states increase supralinearly with fluence. Photoconductivity measurements suggest the density of states above the Fermi energy is not changing drastically with fluence.

  4. Medical imaging applications of amorphous silicon

    SciTech Connect

    Mireshghi, A.; Drewery, J.S.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.K.; Perez-Mendez, V.

    1994-07-01

    Two dimensional hydrogenated amorphous silicon (a-Si:H) pixel arrays are good candidates as flat-panel imagers for applications in medical imaging. Various performance characteristics of these imagers are reviewed and compared with currently used equipments. An important component in the a-Si:H imager is the scintillator screen. A new approach for fabrication of high resolution CsI(Tl) scintillator layers, appropriate for coupling to a-Si:H arrays, are presented. For nuclear medicine applications, a new a-Si:H based gamma camera is introduced and Monte Carlo simulation is used to evaluate its performance.

  5. Structural relaxation of vacancies in amorphous silicon

    SciTech Connect

    Kim, E.; Lee, Y.H.; Chen, C.; Pang, T.

    1997-07-01

    The authors have studied the structural relaxation of vacancies in amorphous silicon (a-Si) using a tight-binding molecular-dynamics method. The most significant difference between vacancies in a-Si and those in crystalline silicon (c-Si) is that the deep gap states do not show up in a-Si. This difference is explained through the unusual behavior of the structural relaxation near the vacancies in a-Si, which enhances the sp{sup 2} + p bonding near the band edges. They have also observed that the vacancies do not migrate below 450 K although some of them can still be annihilated, particularly at high defect density due to large structural relaxation.

  6. Initial evaluation of a commercial EPID modified to a novel direct-detection configuration for radiotherapy dosimetry

    SciTech Connect

    Vial, Philip; Greer, Peter B.; Oliver, Lyn; Baldock, Clive

    2008-10-15

    Electronic portal imaging devices (EPIDs) integrated with medical linear accelerators utilize an indirect-detection EPID configuration (ID-EPID). Amorphous silicon ID-EPIDs provide high quality low dose images for verification of radiotherapy treatments but they have limitations as dosimeters. The standard ID-EPID configuration includes a high atomic number phosphor scintillator screen, a 1 mm copper layer, and other nonwater equivalent materials covering the detector. This configuration leads to marked differences in the response of an ID-EPID compared to standard radiotherapy dosimeters such as ion chambers in water. In this study the phosphor and copper were removed from a standard commercial EPID to modify the configuration to a direct-detection EPID (DD-EPID). Using solid water as the buildup and backscatter for the detector, dosimetric measurements were performed on the DD-EPID and compared to standard dose-in-water data for 6 and 18 MV photons. The sensitivity of the DD-EPID was approximately eight times less than the ID-EPID but the signal was sufficient to produce accurate and reproducible beam profile measurements for open beams and an intensity-modulated beam. Due to the lower signal levels it was found necessary to ensure that the dark field correction (no radiation) DD-EPID signal was stable or updated frequently. The linearity of dose response was comparable to the ID-EPID but with a greater under-response at low doses. DD-EPID measurements of field size output factors and beam profiles at the depth of maximum dose (d{sub max}), and tissue-maximum ratios between the depths of 0.5 and 10 cm, were in close agreement with dose in water measurements. At depths beyond d{sub max} the DD-EPID showed a greater change in response to field size than ionisation chamber measurements and the beam penumbrae were broader compared to diode scans. The modified DD-EPID configuration studied here has the potential to improve the performance of EPIDs for dose

  7. Endurance Tests Of Amorphous-Silicon Photovoltaic Modules

    NASA Technical Reports Server (NTRS)

    Ross, Ronald G., Jr.; Sugimura, Russell S.

    1989-01-01

    Failure mechanisms in high-power service studied. Report discusses factors affecting endurance of amorphous-silicon solar cells. Based on field tests and accelerated aging of photovoltaic modules. Concludes that aggressive research needed if amorphous-silicon modules to attain 10-year life - value U.S. Department of Energy established as goal for photovoltaic modules in commercial energy-generating plants.

  8. Method for improving the stability of amorphous silicon

    DOEpatents

    Branz, Howard M.

    2004-03-30

    A method of producing a metastable degradation resistant amorphous hydrogenated silicon film is provided, which comprises the steps of growing a hydrogenated amorphous silicon film, the film having an exposed surface, illuminating the surface using an essentially blue or ultraviolet light to form high densities of a light induced defect near the surface, and etching the surface to remove the defect.

  9. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOEpatents

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  10. An infrared and luminescence study of tritiated amorphous silicon

    SciTech Connect

    Sidhu, L.S.; Kosteski, T.; Kherani, N.P.; Gaspari, F.; Zukotynski, S.; Shmayda, W.

    1997-07-01

    Tritium has been incorporated into amorphous silicon. Infrared spectroscopy shows new infrared vibration modes due to silicon-tritium (Si-T) bonds in the amorphous silicon network. Si-T vibration frequencies are related to Si-H vibration frequencies by simple mass relationships. Inelastic collisions of {beta} particles, produced as a result of tritium decay, with the amorphous silicon network results in the generation of electron-hole pairs. Radiative recombination of these carriers is observed. Dangling bonds associated with the tritium decay reduce luminescence efficiency.

  11. Amorphous silicon carbide films prepared using vaporized silicon ink

    NASA Astrophysics Data System (ADS)

    Masuda, Takashi; Shen, Zhongrong; Takagishi, Hideyuki; Ohdaira, Keisuke; Shimoda, Tatsuya

    2014-03-01

    The deposition of wide-band-gap silicon films using nonvacuum processes rather than conventional vacuum processes is of substantial interest because it may reduce cost. Herein, we present the optical and electrical properties of p-type hydrogenated amorphous silicon carbide (a-SiC:H) films prepared using a nonvacuum process in a simple chamber with a vaporized silicon ink consisting of cyclopentasilane, cyclohexene, and decaborane. The incorporation of carbon into the silicon network induced by the addition of cyclohexene to the silicon ink resulted in an increase in the optical band gap (Eg) of films from 1.56 to 2.11 eV. The conductivity of films with Eg < 1.9 eV is comparable to that of conventional a-SiC:H films prepared using a vacuum process, while the films with Eg > 1.9 eV show lower conductivity than expected because of the incorporation of excess carbon without the formation of Si-C bonds.

  12. Amorphous silicon bolometer for fire/rescue

    NASA Astrophysics Data System (ADS)

    Francisco, Glenn L.

    2001-03-01

    Thermal imaging sensors have completely changed the way the world views fire and rescue applications. Recently, in the uncooled infrared camera and microbolometer detector areas, major strides have been made in manufacturing personal fire and rescue sensors. A family of new amorphous silicon microbolometers are being produced utilizing low cost, low weight, ultra low power, small size, high volume vacuum packaged silicon wafer-level focal plane array technologies. These bolometers contain no choppers or thermoelectric coolers, require no manual calibration and use readily available commercial off-the-shelf components. Manufacturing and packaging discoveries have allowed infrared sensitive silicon arrays to be produced with the same methods that have driven the rapidly advancing digital wireless telecommunications industries. Fire and rescue professionals are now able to conduct minimum time thermal imaging penetration, surveillance, detection, recognition, rescue and egress while maintaining situational awareness in a manner consistent with the modern technological applications. The purpose of this paper is to describe an uncooled micro bolometer infrared camera approach for meeting fire/rescue wants, needs and requirements, with application of recent technology advancements. This paper also details advances in bolometric focal plane arrays, optical and circuit card technologies, while providing a glimpse into the future of micro sensor growth. Technical barriers are addressed in light of constraints and lessons learned around this technology.

  13. Theoretical studies of amorphous silicon and hydrogenated amorphous silicon with molecular dynamics simulations

    SciTech Connect

    Kwon, I.

    1991-12-20

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) have been studied with molecular dynamics simulations. The structural, vibrational, and electronic properties of these materials have been studied with computer-generated structural models and compare well with experimental observations. The stability of a-si and a-Si:H have been studied with the aim of understanding microscopic mechanisms underlying light-induced degradation in a-Si:H (the Staebler-Wronski effect). With a view to understanding thin film growth processes, a-Si films have been generated with molecular dynamics simulations by simulating the deposition of Si-clusters on a Si(111) substrate. A new two- and three-body interatomic potential for Si-H interactions has been developed. The structural properties of a-Si:H networks are in good agreement with experimental measurements. The presence of H atoms reduces strain and disorder relative to networks without H.

  14. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  15. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  16. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-01

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  17. The impact of MLC transmitted radiation on EPID dosimetry for dynamic MLC beams

    SciTech Connect

    Vial, Philip; Greer, Peter B.; Hunt, Peter; Oliver, Lyn; Baldock, Clive

    2008-04-15

    The purpose of this study was to experimentally quantify the change in response of an amorphous silicon (a-Si) electronic portal imaging device (EPID) to dynamic multileaf collimator (dMLC) beams with varying MLC-transmitted dose components and incorporate the response into a commercial treatment planning system (TPS) EPID prediction model. A combination of uniform intensity dMLC beams and static beams were designed to quantify the effect of MLC transmission on EPID response at the central axis of 10x10 cm{sup 2} beams, at off-axis positions using wide dMLC beam profiles, and at different field sizes. The EPID response to MLC transmitted radiation was 0.79{+-}0.02 of the response to open beam radiation at the central axis of a 10x10 cm{sup 2} field. The EPID response to MLC transmitted radiation was further reduced relative to the open beam response with off-axis distance. The EPID response was more sensitive to field size changes for MLC transmitted radiation compared to open beam radiation by a factor of up to 1.17 at large field sizes. The results were used to create EPID response correction factors as a function of the fraction of MLC transmitted radiation, off-axis distance, and field size. Software was developed to apply the correction factors to each pixel in the TPS predicted EPID image. The corrected images agreed more closely with the measured EPID images in areas of intensity modulated fields with a large fraction of MLC transmission and, as a result the accuracy of portal dosimetry with a-Si EPIDs can be improved. Further investigation into the detector response function and the radiation source model are required to achieve improvements in accuracy for the general case.

  18. Amorphous Silicon Display Backplanes on Plastic Substrates

    NASA Astrophysics Data System (ADS)

    Striakhilev, Denis; Nathan, Arokia; Vygranenko, Yuri; Servati, Peyman; Lee, Czang-Ho; Sazonov, Andrei

    2006-12-01

    Amorphous silicon (a-Si) thin-film transistor (TFT) backplanes are very promising for active-matrix organic light-emitting diode displays (AMOLEDs) on plastic. The technology benefits from a large manufacturing base, simple fabrication process, and low production cost. The concern lies in the instability of the TFTs threshold voltage (VT) and its low device mobility. Although VT-instability can be compensated by means of advanced multi-transistor pixel circuits, the lifetime of the display is still dependent on the TFT process quality and bias conditions. A-Si TFTs with field-effect mobility of 1.1 cm2/V · s and pixel driver circuits have been fabricated on plastic substrates at 150 °C. The circuits are characterized in terms of current drive capability and long-term stability of operation. The results demonstrate sufficient and stable current delivery and the ability of the backplane on plastic to meet AMOLED requirements.

  19. Radiation resistance studies of amorphous silicon films

    NASA Technical Reports Server (NTRS)

    Payson, J. Scott; Woodyard, James R.

    1988-01-01

    A study of hydrogenated amorphous silicon thin films irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15/sq cm is presented. The films were characterized using photothermal deflection spectroscopy, transmission and reflection spectroscopy, and photoconductivity and annealing measurements. Large changes were observed in the subband-gap optical absorption for energies between 0.9 and 1.7 eV. The steady-state photoconductivity showed decreases of almost five orders of magnitude for a fluence of 1E15/sq cm, but the slope of the intensity dependence of the photoconductivity remained almost constant for all fluences. Substantial annealing occurs even at room temperature, and for temperatures greater than 448 K the damage is completely annealed. The data are analyzed to describe the defects and the density of states function.

  20. Short range atomic migration in amorphous silicon

    NASA Astrophysics Data System (ADS)

    Strauß, F.; Jerliu, B.; Geue, T.; Stahn, J.; Schmidt, H.

    2016-05-01

    Experiments on self-diffusion in amorphous silicon between 400 and 500 °C are presented, which were carried out by neutron reflectometry in combination with 29Si/natSi isotope multilayers. Short range diffusion is detected on a length scale of about 2 nm, while long range diffusion is absent. Diffusivities are in the order of 10-19-10-20 m2/s and decrease with increasing annealing time, reaching an undetectable low value for long annealing times. This behavior is strongly correlated to structural relaxation and can be explained as a result of point defect annihilation. Diffusivities for short annealing times of 60 s follow the Arrhenius law with an activation enthalpy of (0.74 ± 0.21) eV, which is interpreted as the activation enthalpy of Si migration.

  1. Amorphous Silicon-Carbon Nanostructure Solar Cells

    NASA Astrophysics Data System (ADS)

    Schriver, Maria; Regan, Will; Loster, Matthias; Zettl, Alex

    2011-03-01

    Taking advantage of the ability to fabricate large area graphene and carbon nanotube networks (buckypaper), we produce Schottky junction solar cells using undoped hydrogenated amorphous silicon thin films and nanostructured carbon films. These films are useful as solar cell materials due their combination of optical transparency and conductance. In our cells, they behave both as a transparent conductor and as an active charge separating layer. We demonstrate a reliable photovoltaic effect in these devices with a high open circuit voltage of 390mV in buckypaper devices. We investigate the unique interface properties which result in an unusual J-V curve shape and optimize fabrication processes for improved solar conversion efficiency. These devices hold promise as a scalable solar cell made from earth abundant materials and without toxic and expensive doping processes.

  2. Tunable plasticity in amorphous silicon carbide films.

    PubMed

    Matsuda, Yusuke; Kim, Namjun; King, Sean W; Bielefeld, Jeff; Stebbins, Jonathan F; Dauskardt, Reinhold H

    2013-08-28

    Plasticity plays a crucial role in the mechanical behavior of engineering materials. For instance, energy dissipation during plastic deformation is vital to the sufficient fracture resistance of engineering materials. Thus, the lack of plasticity in brittle hybrid organic-inorganic glasses (hybrid glasses) often results in a low fracture resistance and has been a significant challenge for their integration and applications. Here, we demonstrate that hydrogenated amorphous silicon carbide films, a class of hybrid glasses, can exhibit a plasticity that is even tunable by controlling their molecular structure and thereby leads to an increased and adjustable fracture resistance in the films. We decouple the plasticity contribution from the fracture resistance of the films by estimating the "work-of-fracture" using a mean-field approach, which provides some insight into a potential connection between the onset of plasticity in the films and the well-known rigidity percolation threshold. PMID:23876200

  3. Direct-patterned optical waveguides on amorphous silicon films

    DOEpatents

    Vernon, Steve; Bond, Tiziana C.; Bond, Steven W.; Pocha, Michael D.; Hau-Riege, Stefan

    2005-08-02

    An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.

  4. RF Sputtering for preparing substantially pure amorphous silicon monohydride

    DOEpatents

    Jeffrey, Frank R.; Shanks, Howard R.

    1982-10-12

    A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  5. Characterization of a novel EPID designed for simultaneous imaging and dose verification in radiotherapy

    SciTech Connect

    Blake, Samuel J.; McNamara, Aimee L.; Deshpande, Shrikant; Holloway, Lois; Greer, Peter B.; Kuncic, Zdenka; Vial, Philip

    2013-09-15

    Purpose: Standard amorphous silicon electronic portal imaging devices (a-Si EPIDs) are x-ray imagers used frequently in radiotherapy that indirectly detect incident x-rays using a metal plate and phosphor screen. These detectors may also be used as two-dimensional dosimeters; however, they have a well-characterized nonwater-equivalent dosimetric response. Plastic scintillating (PS) fibers, on the other hand, have been shown to respond in a water-equivalent manner to x-rays in the energy range typically encountered during radiotherapy. In this study, the authors report on the first experimental measurements taken with a novel prototype PS a-Si EPID developed for the purpose of performing simultaneous imaging and dosimetry in radiotherapy. This prototype employs an array of PS fibers in place of the standard metal plate and phosphor screen. The imaging performance and dosimetric response of the prototype EPID were evaluated experimentally and compared to that of the standard EPID.Methods: Clinical 6 MV photon beams were used to first measure the detector sensitivity, linearity of dose response, and pixel noise characteristics of the prototype and standard EPIDs. Second, the dosimetric response of each EPID was evaluated relative to a reference water-equivalent dosimeter by measuring the off-axis and field size response in a nontransit configuration, along with the off-axis, field size, and transmission response in a transit configuration using solid water blocks. Finally, the imaging performance of the prototype and standard EPIDs was evaluated quantitatively by using an image quality phantom to measure the contrast to noise ratio (CNR) and spatial resolution of images acquired with each detector, and qualitatively by using an anthropomorphic phantom to acquire images representative of human anatomy.Results: The prototype EPID's sensitivity was 0.37 times that of the standard EPID. Both EPIDs exhibited responses that were linear with delivered dose over a range of 1

  6. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE PAGESBeta

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  7. Process for producing amorphous and crystalline silicon nitride

    DOEpatents

    Morgan, P.E.D.; Pugar, E.A.

    1985-11-12

    A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

  8. Process for producing amorphous and crystalline silicon nitride

    DOEpatents

    Morgan, Peter E. D.; Pugar, Eloise A.

    1985-01-01

    A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

  9. Direct dose to water dosimetry for pretreatment IMRT verification using a modified EPID

    SciTech Connect

    Gustafsson, Helen; Vial, Philip; Kuncic, Zdenka; Baldock, Clive; Denham, James W.; Greer, Peter B.

    2011-11-15

    Purpose: Electronic portal imaging devices (EPIDs) are high resolution systems that produce electronic dose maps with minimal time required for equipment setup, and therefore potentially present a time-saving alternative for intensity modulated radiation therapy (IMRT) pretreatment verification. A modified commercial EPID was investigated operated with an opaque sheet blocking the optical signal produced in the phosphor layer as a precursor to a switched mode dual dosimetry-imaging EPID system. The purpose of this study was to investigate the feasibility of using this system for direct dose to water dosimetry for pretreatment IMRT verification. Methods: A Varian amorphous silicon EPID was modified by placing an opaque sheet between the Gd{sub 2}S{sub 2}O:Tb phosphor layer and the photodiode array to block the optical photons. The EPID was thus converted to a direct-detecting system (dEPID), in which the high energy radiation deposits energy directly in the photodiode array. The copper build-up was replaced with d{sub max} solid water. Sixty-one IMRT beams of varying complexity were delivered to the EPID, to EDR2 dosimetric film and to a 2D ion chamber array (MapCheck). EPID data was compared to film and MapCheck data using gamma analysis with 3%, 3mm pass criteria. Results: The fraction of points that passed the gamma test was on average 98.1% and 98.6%, for the EPID versus film and EPID versus MapCheck comparisons, respectively. In the case of comparison with film, the majority of observed discrepancies were associated with problems related to film sensitivity or processing. Conclusions: The very close agreement between EPID and both film and MapCheck data demonstrates that the modified EPID is suitable for direct dose to water measurement for pretreatment IMRT verification. These results suggest a reconfigured EPID could be an efficient and accurate dosimeter. Alternatively, optical switching methods could be developed to produce a dual-mode EPID with both

  10. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

    PubMed Central

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

  11. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

    PubMed

    Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

  12. Dosimetric verification of radiation therapy including intensity modulated treatments, using an amorphous-silicon electronic portal imaging device

    NASA Astrophysics Data System (ADS)

    Chytyk-Praznik, Krista Joy

    Radiation therapy is continuously increasing in complexity due to technological innovation in delivery techniques, necessitating thorough dosimetric verification. Comparing accurately predicted portal dose images to measured images obtained during patient treatment can determine if a particular treatment was delivered correctly. The goal of this thesis was to create a method to predict portal dose images that was versatile and accurate enough to use in a clinical setting. All measured images in this work were obtained with an amorphous silicon electronic portal imaging device (a-Si EPID), but the technique is applicable to any planar imager. A detailed, physics-motivated fluence model was developed to characterize fluence exiting the linear accelerator head. The model was further refined using results from Monte Carlo simulations and schematics of the linear accelerator. The fluence incident on the EPID was converted to a portal dose image through a superposition of Monte Carlo-generated, monoenergetic dose kernels specific to the a-Si EPID. Predictions of clinical IMRT fields with no patient present agreed with measured portal dose images within 3% and 3 mm. The dose kernels were applied ignoring the geometrically divergent nature of incident fluence on the EPID. A computational investigation into this parallel dose kernel assumption determined its validity under clinically relevant situations. Introducing a patient or phantom into the beam required the portal image prediction algorithm to account for patient scatter and attenuation. Primary fluence was calculated by attenuating raylines cast through the patient CT dataset, while scatter fluence was determined through the superposition of pre-calculated scatter fluence kernels. Total dose in the EPID was calculated by convolving the total predicted incident fluence with the EPID-specific dose kernels. The algorithm was tested on water slabs with square fields, agreeing with measurement within 3% and 3 mm. The

  13. Photo-electronic properties of CVD amorphous silicon

    NASA Astrophysics Data System (ADS)

    Salau, Akinola Muritala

    1983-12-01

    D.c. conductivity, thermoelectric power and photoconductivity of amorphous silicon films prepared by chemical vapor deposition (CVD) have been measured as functions of operating and annealing temperatures. Several interpretations of the results obtained have been suggested.

  14. Hydrogenated amorphous silicon films prepared by glow discharge of disilane

    SciTech Connect

    Wiesmann, H.J. )

    1990-01-01

    This report describes the results of an investigation of the properties of hydrogenated amorphous silicon films and the efficiency of amorphous silicon solar cells deposited from disilane at rates of 1.5 nanometers/second or greater. The study was divided into two parts, investigation of basic materials properties of hydrogenated amorphous silicon thin films and the fabrication of glass-P-I-N-metal solar cells. The thin film materials properties investigated included the dark conductivity, photoconductivity, dihydride/monohydride concentration ratio, activation energy, and mobility-lifetime product. Hydrogenated amorphous silicon solar cells were fabricated with an intrinsic layer which was deposited at 1.5 nanometers/second. The absolute and reverse bias quantum yields were measured and solar cell efficiencies of 5% were achieved. Attempts to increase the efficiency by reverse bias annealing are also reported. 7 refs., 27 figs.

  15. Thermal properties of amorphous/crystalline silicon superlattices.

    PubMed

    France-Lanord, Arthur; Merabia, Samy; Albaret, Tristan; Lacroix, David; Termentzidis, Konstantinos

    2014-09-01

    Thermal transport properties of crystalline/amorphous silicon superlattices using molecular dynamics are investigated. We show that the cross-plane conductivity of the superlattices is very low and close to the conductivity of bulk amorphous silicon even for amorphous layers as thin as ≃ 6 Å. The cross-plane thermal conductivity weakly increases with temperature which is associated with a decrease of the Kapitza resistance with temperature at the crystalline/amorphous interface. This property is further investigated considering the spatial analysis of the phonon density of states in domains close to the interface. Interestingly, the crystalline/amorphous superlattices are shown to display large thermal anisotropy, according to the characteristic sizes of elaborated structures. These last results suggest that the thermal conductivity of crystalline/amorphous superlattices can be phonon engineered, providing new directions for nanostructured thermoelectrics and anisotropic materials in thermal transport. PMID:25105883

  16. Amorphous Silicon: Flexible Backplane and Display Application

    NASA Astrophysics Data System (ADS)

    Sarma, Kalluri R.

    Advances in the science and technology of hydrogenated amorphous silicon (a-Si:H, also referred to as a-Si) and the associated devices including thin-film transistors (TFT) during the past three decades have had a profound impact on the development and commercialization of major applications such as thin-film solar cells, digital image scanners and X-ray imagers and active matrix liquid crystal displays (AMLCDs). Particularly, during approximately the past 15 years, a-Si TFT-based flat panel AMLCDs have been a huge commercial success. a-Si TFT-LCD has enabled the note book PCs, and is now rapidly replacing the venerable CRT in the desktop monitor and home TV applications. a-Si TFT-LCD is now the dominant technology in use for applications ranging from small displays such as in mobile phones to large displays such as in home TV, as well-specialized applications such as industrial and avionics displays.

  17. Three-dimensional IMRT verification with a flat-panel EPID.

    PubMed

    Steciw, S; Warkentin, B; Rathee, S; Fallone, B G

    2005-02-01

    A three-dimensional (3D) intensity-modulated radiotherapy (IMRT) pretreatment verification procedure has been developed based on the measurement of two-dimensional (2D) primary fluence profiles using an amorphous silicon flat-panel electronic portal imaging device (EPID). As described in our previous work, fluence profiles are extracted from EPID images by deconvolution with kernels that represent signal spread in the EPID due to radiation and optical scattering. The deconvolution kernels are derived using Monte Carlo simulations of dose deposition in the EPID and empirical fitting methods, for both 6 and 15 MV photon energies. In our new 3D verification technique, 2D fluence modulation profiles for each IMRT field in a treatment are used as input to a treatment planning system (TPS), which then generates 3D doses. Verification is accomplished by comparing this new EPID-based 3D dose distribution to the planned dose distribution calculated by the TPS. Thermoluminescent dosimeter (TLD) point dose measurements for an IMRT treatment of an anthropomorphic phantom were in good agreement with the EPID-based 3D doses; in contrast, the planned dose under-predicts the TLD measurement in a high-gradient region by approximately 16%. Similarly, large discrepancies between EPID-based and TPS doses were also evident in dose profiles of small fields incident on a water phantom. These results suggest that our 3D EPID-based method is effective in quantifying relevant uncertainties in the dose calculations of our TPS for IMRT treatments. For three clinical head and neck cancer IMRT treatment plans, our TPS was found to underestimate the mean EPID-based doses in the critical structures of the spinal cord and the parotids by approximately 4 Gy (11%-14%). According to radiobiological modeling calculations that were performed, such underestimates can potentially lead to clinically significant underpredictions of normal tissue complication rates. PMID:15789607

  18. Silicon heterojunction solar cell and crystallization of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Lu, Meijun

    The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (˜100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (<200°C). In first part of this dissertation, I will introduce our work on front-junction SHJ solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells. Although the a-Si:H is found to help to achieve high efficiency in c-Si heterojuntion solar cells, it also absorbs short wavelength (<600 nm) light, leading to non-ideal blue response and lower short circuit currents (JSC) in the front-junction SHJ cells. Considering this, heterojunction with both a-Si:H emitter and base contact on the back side in an interdigitated pattern, i.e. interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, is developed. This dissertation will show our progress in developing IBC-SHJ solar cells, including the structure design; device fabrication and characterization; two dimensional simulation by using simulator Sentaurus Device; some special features of IBC-SHJ solar cells; and performance of IBC-SHJ cells without and with back surface buffer layers. Another trend for solar cell industry is thin film solar cells, since

  19. Hydrogenated amorphous silicon deposited by ion-beam sputtering

    NASA Technical Reports Server (NTRS)

    Lowe, V. E.; Henin, N.; Tu, C.-W.; Tavakolian, H.; Sites, J. R.

    1981-01-01

    Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

  20. Electrical characteristics of amorphous iron-tungsten contacts on silicon

    NASA Technical Reports Server (NTRS)

    Finetti, M.; Pan, E. T.-S.; Nicolet, M.-A.; Suni, I.

    1983-01-01

    The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities of 1 x 10 to the -7th and 2.8 x 10 to the -6th were measured on n(+) and p(+) silicon, respectively. These values remain constant after thermal treatment up to at least 500 C. A barrier height of 0.61 V was measured on n-type silicon.

  1. Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467

    SciTech Connect

    Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I.

    1997-07-01

    This book was divided into the following parts: Staebler-Wronski and Fundamental Defect Studies in Amorphous Silicon; The Story of Hydrogen in Amorphous Silicon; Photoelectric Properties of Amorphous Silicon; Deposition and Properties of Microcrystalline Silicon; Deposition Studies for Amorphous Silicon and Related Materials; Solar Cells; Thin-Film Transistors; and Sensors and Novel Device Concepts. Separate abstracts were prepared for most of the papers in the volume.

  2. Growth and Characterization of Hydrogenated Amorphous Silicon and Hydrogenated Amorphous Silicon Carbide with Liquid Organometallic Sources.

    NASA Astrophysics Data System (ADS)

    Gaughan, Kevin David

    The growth and characterization of hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon -carbon (rm a-rm Si _{1-X}C_{X}: H) alloys employing liquid organometallic sources are described. N -type a-Si:H films were grown using a mixture of silane and tertiarybutylphosphine (TBP-rm C_4H _9P_2) vapor in a plasma enhanced chemical vapor deposition system. Impurity levels from parts per million to about 5 at. % phosphorus have been incorporated into the film with this method. Tertiarybutylphosphine is less toxic and less pyrophoric than phosphine which is usually used in n-type doping of a-Si:H films. Optical and electronic properties were characterized by room temperature as well as temperature dependent dark conductivity, photothermal deflection spectroscopy, infrared vibrational spectroscopy, electron spin resonance, and electron microprobe analysis. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine. The experimental results are compared with the predictions of several models that describe the chemical equilibrium between active dopants and deep defects. A pronounced decrease in the effects of doping, such as an increase in the activation energy of electrical conductivity and an decrease in the conductivity of the sample, were seen in heavily doped films (TBP/SiH _4> 0.5%), perhaps influenced by the increased carbon and/or phosphorus concentrations. Amorphous silicon-carbide alloys have been grown by the plasma decomposition of ditertiarybutylsilane ( rm DTBS-rm SiH_2(C _4H_9)_2). The optical bandgaps, which varied from 2.2 to 3.3 eV, are strongly dependent upon the deposition conditions. The carbon concentrations in these films varied from 60 to 95 at. %. The optical band-edge is very broad compared to that which is found in a-Si:H and this breadth is essentially independent of the deposition conditions. The plasma decomposition of admixtures of DTBS and silane has produced rm a- rm Si_{1-X

  3. Latent ion tracks in amorphous silicon

    SciTech Connect

    Bierschenk, Thomas; Giulian, Raquel; Afra, Boshra; Rodriguez, Matias D; Schauries, D; Mudie, Stephen; Pakarinen, Olli H; Djurabekova, Flyura; Nordlund, Kai; Osmani, Orkhan; Medvedev, Nikita; Rethfield, Baerbel; Ridgway, Mark C; Kluth, Patrick

    2013-01-01

    We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy ion irradiation. An underlying core-shell structure consistent with remnants of a high density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions dier for as-implanted and relaxed Si as attributed to dierent microstructures and melting temperatures. The identication and characterisation of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy ion irradiation in amorphous semiconductors.

  4. Sensitivity of an Elekta iView GT a-Si EPID model to delivery errors for pre-treatment verification of IMRT fields.

    PubMed

    Herwiningsih, Sri; Hanlon, Peta; Fielding, Andrew

    2014-12-01

    A Monte Carlo model of an Elekta iViewGT amorphous silicon electronic portal imaging device (a-Si EPID) has been validated for pre-treatment verification of clinical IMRT treatment plans. The simulations involved the use of the BEAMnrc and DOSXYZnrc Monte Carlo codes to predict the response of the iViewGT a-Si EPID model. The predicted EPID images were compared to the measured images obtained from the experiment. The measured EPID images were obtained by delivering a photon beam from an Elekta Synergy linac to the Elekta iViewGT a-Si EPID. The a-Si EPID was used with no additional build-up material. Frame averaged EPID images were acquired and processed using in-house software. The agreement between the predicted and measured images was analyzed using the gamma analysis technique with acceptance criteria of 3 %/3 mm. The results show that the predicted EPID images for four clinical IMRT treatment plans have a good agreement with the measured EPID signal. Three prostate IMRT plans were found to have an average gamma pass rate of more than 95.0 % and a spinal IMRT plan has the average gamma pass rate of 94.3 %. During the period of performing this work a routine MLC calibration was performed and one of the IMRT treatments re-measured with the EPID. A change in the gamma pass rate for one field was observed. This was the motivation for a series of experiments to investigate the sensitivity of the method by introducing delivery errors, MLC position and dosimetric overshoot, into the simulated EPID images. The method was found to be sensitive to 1 mm leaf position errors and 10 % overshoot errors. PMID:25182667

  5. Recent improvements in amorphous silicon-based multijunction modules

    SciTech Connect

    Arya, R.R.; Bennett, M.; Yang, L.; Newton, J.; Li, Y.M.; Maley, N.; Fieselmann, B.; Chen, L.F.; Rajan, K.; Wilczynski, A.; Wood, G. )

    1994-06-30

    Advances in intrinsic amorphous silicon and in amorphous silicon carbon alloys have resulted in thin single junction devices with V[sub oc]'s over 1.0 volts and excellent stability with both i-layer materials. Incorporation of improved a-Si:H i-layers and thin microcrystalline n-layers in a-Si/a-Si/a-SiGe triple junction modules has resulted in large area triple junction modules with initial efficiencies as high as 11.35%. These modules exhibit a degradation of [similar to]20% after 1000 hours of light-soaking resulting in [similar to]9% stable modules.

  6. Amorphous silicon alloy-based roof integrated photovoltaic systems

    SciTech Connect

    Nath, P.; Vogeli, C.; Singh, A.; Call, J.

    1994-12-31

    A roll-to-roll process is used to deposit tandem amorphous silicon alloy solar cell onto thin (0.005 inch) stainless steel substrate. Using this solar cell material, the authors have designed and fabricated a photovoltaic (PV) module which can be integrated into building roofs. The module is fabricated by laminating the large area amorphous silicon on stainless steel solar cell material onto a 0.03 inch thick coated galvanized steel support plate. The module is then formed in such a way to allow installation as a batten and seam roofing system. This paper describes the fabrication and installation details of such PV systems.

  7. Transmissive metallic contact for amorphous silicon solar cells

    DOEpatents

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  8. Solution-processed amorphous silicon surface passivation layers

    SciTech Connect

    Mews, Mathias Sontheimer, Tobias; Korte, Lars; Rech, Bernd; Mader, Christoph; Traut, Stephan; Wunnicke, Odo

    2014-09-22

    Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37 ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724 mV was achieved, demonstrating excellent silicon surface passivation.

  9. Proposed planar-type amorphous-silicon MOS transistors

    NASA Astrophysics Data System (ADS)

    Uchida, Y.; Matsumura, M.

    1985-10-01

    Novel planar-type amorphous-silicon metal-oxide-semiconductor transistors have been proposed and their features have been demonstrated. The gate insulator of silicon-dioxide grown inside the original amorphous silicon layer makes transistor characteristics highly stable. The source and drain of micro-crystal silicon make the fabrication process simple and the parasitic elements small. The on-current of the prototype transistor was extrapolated to decrease to one-half of its initial value 10 billion years after the application of dc bias. The on-off current ratio was about a million and no voltage offset was observed. The field-effect mobility was 0.6 sq cm Vs.

  10. Comparison of ghosting effects for three commercial a-Si EPIDs

    SciTech Connect

    McDermott, L. N.; Nijsten, S. M. J. J. G.; Sonke, J.-J.; Partridge, M.; Herk, M. van; Mijnheer, B. J.

    2006-07-15

    Many studies have reported dosimetric characteristics of amorphous silicon electronic portal imaging devices (EPIDs). Some studies ascribed a non-linear signal to gain ghosting and image lag. Other reports, however, state the effect is negligible. This study compares the signal-to-monitor unit (MU) ratio for three different brands of EPID systems. The signal was measured for a wide range of monitor units (5-1000), dose-rates, and beam energies. All EPIDs exhibited a relative under-response for beams of few MUs; giving 4 to 10% lower signal-to-MU ratios relative to that of 1000 MUs. This under-response is consistent with ghosting effects due to charge trapping.

  11. Threshold irradiation dose for amorphization of silicon carbide

    SciTech Connect

    Snead, L.L.; Zinkle, S.J.

    1997-04-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

  12. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    SciTech Connect

    Chowdhury, Zahidur R. Kherani, Nazir P.

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  13. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    NASA Astrophysics Data System (ADS)

    Chowdhury, Zahidur R.; Kherani, Nazir P.

    2014-12-01

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide-plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are VOC of 666 mV, JSC of 29.5 mA-cm-2, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  14. Nanoindentation-induced amorphization in silicon carbide

    NASA Astrophysics Data System (ADS)

    Szlufarska, Izabela; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2004-07-01

    The nanoindentation-induced amorphization in SiC is studied using molecular dynamics simulations. The load-displacement response shows an elastic shoulder followed by a plastic regime consisting of a series of load drops. Analyses of bond angles, local pressure, and shear stress, and shortest-path rings show that these drops are related to dislocation activities under the indenter. We show that amorphization is driven by coalescence of dislocation loops and that there is a strong correlation between load-displacement response and ring distribution.

  15. Surface passivation of heavily boron or phosphorus doped crystalline silicon utilizing amorphous silicon

    NASA Astrophysics Data System (ADS)

    Carstens, K.; Dahlinger, M.

    2016-05-01

    Excellent surface passivation of heavily boron or phosphorus doped crystalline silicon is presented utilizing undoped hydrogenated amorphous silicon (a-Si:H). For passivating boron doped crystalline silicon surfaces, amorphous silicon needs to be deposited at low temperatures 150°C ≤Tdep≤200°C , leading to a high bandgap. In contrast, low bandgap amorphous silicon causes an inferior surface passivation of highly boron doped crystalline silicon. Boron doping in crystalline silicon leads to a shift of the Fermi energy towards the valence band maximum in the undoped a-Si:H. A simulation, implementing dangling bond defects according to the defect pool model, shows this shift in the undoped a-Si:H passivation to be more pronounced if the a-Si:H has a lower bandgap. Hence, the inferior passivation of boron doped surfaces with low bandgap amorphous silicon stems from a lower silicon-hydrogen bond energy due to this shift of the Fermi energy. Hydrogen effusion and ellipsometry measurements support our interpretation.

  16. Long-term stability of amorphous-silicon modules

    NASA Technical Reports Server (NTRS)

    Ross, R. G., Jr.

    1986-01-01

    The Jet Propulsion Laboratory (JPL) program of developing qualification tests necessary for amorphous silicon modules, including appropriate accelerated environmental tests reveal degradation due to illumination. Data were given which showed the results of temperature-controlled field tests and accelerated tests in an environmental chamber.

  17. Integral bypass diodes in an amorphous silicon alloy photovoltaic module

    NASA Technical Reports Server (NTRS)

    Hanak, J. J.; Flaisher, H.

    1991-01-01

    Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

  18. Photocurrent images of amorphous-silicon solar-cell modules

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Shumka, A.; Trask, J.

    1985-01-01

    Results obtained in applying the unique characteristics of the solar cell laser scanner to investigate the defects and quality of amorphous silicon cells are presented. It is concluded that solar cell laser scanners can be effectively used to nondestructively test not only active defects but also the cell quality and integrity of electrical contacts.

  19. Performance of amorphous silicon photovoltaic systems, 1985--1989

    SciTech Connect

    Not Available

    1990-04-01

    This report discusses the performance of commercial amorphous silicon modules used in photovoltaic power systems from 1985 through 1989. Topics discussed include initial degradation, reliability, durability, and effects of temperature and solar irradiance on peak power and energy production. 6 refs., 18 figs.

  20. Amorphous silicon carbide coatings for extreme ultraviolet optics

    NASA Technical Reports Server (NTRS)

    Kortright, J. B.; Windt, David L.

    1988-01-01

    Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

  1. Ion-assisted recrystallization of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Priolo, F.; Spinella, C.; La Ferla, A.; Rimini, E.; Ferla, G.

    1989-12-01

    Our recent work on ion-beam-assisted epitaxial growth of amorphous Si layers on single crystal substrates is reviewed. The planar motion of the crystal-amorphous interface was monitored in situ, during irradiations, by transient reflectivity measurements. This technique allows the measurement of the ion-induced growth rate with a very high precision. We have observed that this growth rate scales linearly with the number of displacements produced at the crystal-amorphous interface by the impinging ions. Moreover the regrowth onto <100> oriented substrates is a factor of ≈ 4 faster with respect to that on <111> substrates. Impurities dissolved in the amorphous layer influence the kinetics of recrystallization. For instance, dopants such as As, B and P enhance the ion-induced growth rate while oxygen has the opposite effect. The dependence of the rate on impurity concentration is however less strong with respect to pure thermal annealing. For instance, an oxygen concentration of 1 × 1021 / cm3 decreases the ion-induced growth rate by a factor of ≈ 3; this same concentration would have decreased the rate of pure thermal annealing by more than 4 orders of magnitude. The reduced effects of oxygen during ion-beam crystallization allow the regrowth of deposited Si layers despite the presence of a high interfacial oxygen content. The process is investigated in detail and its possible application to the microelectronic technology is discussed.

  2. Hydrogen-free amorphous silicon with no tunneling states.

    PubMed

    Liu, Xiao; Queen, Daniel R; Metcalf, Thomas H; Karel, Julie E; Hellman, Frances

    2014-07-11

    The ubiquitous low-energy excitations, known as two-level tunneling systems (TLSs), are one of the universal phenomena of amorphous solids. Low temperature elastic measurements show that e-beam amorphous silicon (a-Si) contains a variable density of TLSs which diminishes as the growth temperature reaches 400 °C. Structural analyses show that these a-Si films become denser and more structurally ordered. We conclude that the enhanced surface energetics at a high growth temperature improved the amorphous structural network of e-beam a-Si and removed TLSs. This work obviates the role hydrogen was previously thought to play in removing TLSs in the hydrogenated form of a-Si and suggests it is possible to prepare "perfect" amorphous solids with "crystal-like" properties for applications. PMID:25062205

  3. Deposition of device quality low H content, amorphous silicon films

    DOEpatents

    Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

    1995-03-14

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

  4. Deposition of device quality low H content, amorphous silicon films

    DOEpatents

    Mahan, Archie H.; Carapella, Jeffrey C.; Gallagher, Alan C.

    1995-01-01

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

  5. Clinical experience with EPID dosimetry for prostate IMRT pre-treatment dose verification.

    PubMed

    McDermott, L N; Wendling, M; van Asselen, B; Stroom, J; Sonke, J J; van Herk, M; Mijnheer, B J

    2006-10-01

    The aim of this study was to demonstrate how dosimetry with an amorphous silicon electronic portal imaging device (a-Si EPID) replaced film and ionization chamber measurements for routine pre-treatment dosimetry in our clinic. Furthermore, we described how EPID dosimetry was used to solve a clinical problem. IMRT prostate plans were delivered to a homogeneous slab phantom. EPID transit images were acquired for each segment. A previously developed in-house back-projection algorithm was used to reconstruct the dose distribution in the phantom mid-plane (intersecting the isocenter). Segment dose images were summed to obtain an EPID mid-plane dose image for each field. Fields were compared using profiles and in two dimensions with the y evaluation (criteria: 3%/3 mm). To quantify results, the average gamma (gamma avg), maximum gamma (gamma max), and the percentage of points with gamma < 1(P gamma < 1) were calculated within the 20% isodose line of each field. For 10 patient plans, all fields were measured with EPID and film at gantry set to 0 degrees. The film was located in the phantom coronal mid-plane (10 cm depth), and compared with the back-projected EPID mid-plane absolute dose. EPID and film measurements agreed well for all 50 fields, with (gamma avg) =0.16, (gamma max)=1.00, and (P gamma < 1)= 100%. Based on these results, film measurements were discontinued for verification of prostate IMRT plans. For 20 patient plans, the dose distribution was re-calculated with the phantom CT scan and delivered to the phantom with the original gantry angles. The planned isocenter dose (plan(iso)) was verified with the EPID (EPID(iso)) and an ionization chamber (IC(iso)). The average ratio, (EPID(iso)/IC(iso)), was 1.00 (0.01 SD). Both measurements were systematically lower than planned, with (EPID(iso)/plan(iso)) and (IC(iso)/plan(iso))=0.99 (0.01 SD). EPID mid-plane dose images for each field were also compared with the corresponding plane derived from the three dimensional

  6. Heat-Induced Agglomeration of Amorphous Silicon Nanoparticles Toward the Formation of Silicon Thin Film.

    PubMed

    Jang, Bo Yun; Kim, Ja Young; Seo, Gyeongju; Shin, Chae-Ho; Ko, Chang Hyun

    2016-01-01

    The thermal behavior of silicon nanoparticles (Si NPs) was investigated for the preparation of silicon thin film using a solution process. TEM analysis of Si NPs, synthesized by inductively coupled plasma, revealed that the micro-structure of the Si NPs was amorphous and that the Si NPs had melted and merged at a comparatively low temperature (~750 °C) considering bulk melting temperature of silicon (1414 °C). A silicon ink solution was prepared by dispersing amorphous Si NPs in propylene glycol (PG). It was then coated onto a silicon wafer and a quartz plate to form a thin film. These films were annealed in a vacuum or in an N₂ environment to increase their film density. N2 annealing at 800 °C and 1000 °C induced the crystallization of the amorphous thin film. An elemental analysis by the SIMS depth profile showed that N₂annealing at 1000 °C for 180 min drastically reduced the concentrations of carbon and oxygen inside the silicon thin film. These results indicate that silicon ink prepared using amorphous Si NPs in PG can serve as a proper means of preparing silicon thin film via solution process. PMID:27398566

  7. Multi-band silicon quantum dots embedded in an amorphous matrix of silicon carbide.

    PubMed

    Chang, Geng-rong; Ma, Fei; Ma, Da-yan; Xu, Ke-wei

    2010-11-19

    Silicon quantum dots embedded in an amorphous matrix of silicon carbide were realized by a magnetron co-sputtering process and post-annealing. X-ray photoelectron spectroscopy, glancing x-ray diffraction, Raman spectroscopy and high-resolution transmission electron microscopy were used to characterize the chemical composition and the microstructural properties. The results show that the sizes and size distribution of silicon quantum dots can be tuned by changing the annealing atmosphere and the atom ratio of silicon and carbon in the matrix. A physicochemical mechanism is proposed to demonstrate this formation process. Photoluminescence measurements indicate a multi-band configuration due to the quantum confinement effect of silicon quantum dots with different sizes. The PL spectra are further widened as a result of the existence of amorphous silicon quantum dots. This multi-band configuration would be extremely advantageous in improving the photoelectric conversion efficiency of photovoltaic solar cells. PMID:20975214

  8. Plasma Deposition of Doped Amorphous Silicon

    NASA Technical Reports Server (NTRS)

    Calcote, H. F.

    1985-01-01

    Pair of reports present further experimental details of investigation of plasma deposition of films of phosphorous-doped amosphous silicon. Probe measurements of electrical resistance of deposited films indicated films not uniform. In general, it appeared that resistance decreased with film thickness.

  9. Light-induced metastable structural changes in hydrogenated amorphous silicon

    SciTech Connect

    Fritzsche, H.

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  10. Pretreatment verification of IMRT absolute dose distributions using a commercial a-Si EPID

    SciTech Connect

    Talamonti, C.; Casati, M.; Bucciolini, M.

    2006-11-15

    A commercial amorphous silicon electronic portal imaging device (EPID) has been studied to investigate its potential in the field of pretreatment verifications of step and shoot, intensity modulated radiation therapy (IMRT), 6 MV photon beams. The EPID was calibrated to measure absolute exit dose in a water-equivalent phantom at patient level, following an experimental approach, which does not require sophisticated calculation algorithms. The procedure presented was specifically intended to replace the time-consuming in-phantom film dosimetry. The dosimetric response was characterized on the central axis in terms of stability, linearity, and pulse repetition frequency dependence. The a-Si EPID demonstrated a good linearity with dose (within 2% from 1 monitor unit), which represent a prerequisite for the application in IMRT. A series of measurements, in which phantom thickness, air gap between the phantom and the EPID, field size and position of measurement of dose in the phantom (entrance or exit) varied, was performed to find the optimal calibration conditions, for which the field size dependence is minimized. In these conditions (20 cm phantom thickness, 56 cm air gap, exit dose measured at the isocenter), the introduction of a filter for the low-energy scattered radiation allowed us to define a universal calibration factor, independent of field size. The off-axis extension of the dose calibration was performed by applying a radial correction for the beam profile, distorted due to the standard flood field calibration of the device. For the acquisition of IMRT fields, it was necessary to employ home-made software and a specific procedure. This method was applied for the measurement of the dose distributions for 15 clinical IMRT fields. The agreement between the dose distributions, quantified by the gamma index, was found, on average, in 97.6% and 98.3% of the analyzed points for EPID versus TPS and for EPID versus FILM, respectively, thus suggesting a great

  11. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect

    Bhat, P.K.; Brown, S.; Hollingsworth, R.; Shen, D.S.; del Cueto, J.; Iwanicko, E.; Marshall, C.; DeHart, C.; Mentor, D.; Benson, A.; Matovich, C.; Sandwisch, J. )

    1991-04-01

    This report describes a contract to produce multijunction modules based entirely on amorphous silicon alloys, the modules having an aperture area of at least 900 cm{sup 2} and a stable, reproducible conversion efficiency of at least 6.5% after 600 hours of light exposure (air mass 1.5) at 50{degrees} C. The work focussed on (1) producing opto-electronic-grade amorphous silicon material for band gaps of about 1.7 and 1.9 eV by changing the hydrogen content in the film bonded to the silicon, (2) studying and obtaining data on the light stability of single-junction p-i-n solar cells with gaps of about 1.7 and 1.9 eV, and (3) analyzing losses in a silicon/silicon multijunction cell. We report new results on an indium tin oxide (ITO)/silver back contact and the deposition of granular tin oxide by atmospheric-pressure chemical vapor deposition. Progress toward module fabrication at the end of six months has been good, with the demonstration of 5.4% initial efficiency in a silicon/silicon multijunction submodule with an aperture area of 4620 cm{sup 2} and incorporating devices with 2nd-junction i-layer thicknesses of about 3500 {angstrom}. We also demonstrated a single-junction silicon submodule with an aperture area of 4620 cm{sup 2}, a thickness of about 3500 {angstrom}, and an initial efficiency of 6.5%. 4 refs., 39 figs., 5 tabs.

  12. Use of Tritium in the Study of defects in Amorphous Silicon

    SciTech Connect

    Costea, S.; Pisana, S.; Kherani, N.P.; Gaspari, F.; Kosteski, T.; Shmayda, W.T.; Zukotynski, S.

    2005-11-28

    Hydrogen is known to strongly affect the physical properties of amorphous semiconductors. Indeed hydrogen is introduced during the growth of amorphous silicon films, used in active matrix displays and solar cells, to passivate silicon dangling bonds and to relax the lattice thereby reducing the density of states in the energy gap by several orders of magnitude and giving rise to device grade material. Ideally, hydrogenated amorphous silicon (a-Si:H) is a continuous covalently bonded random network of silicon-silicon and silicon-hydrogen atoms, with the predominant nearest neighbour environment similar to that of crystalline silicon.

  13. Electrochemical degradation of amorphous-silicon photovoltaic modules

    NASA Technical Reports Server (NTRS)

    Mon, G. R.; Ross, R. G., Jr.

    1985-01-01

    Techniques of module electrochemical corrosion research, developed during reliability studies of crystalline-silicon modules (C-Si), have been applied to this new investigation into amorphous-silicon (a-Si) module reliability. Amorphous-Si cells, encapsulated in the polymers polyvinyl butyral (PVB) and ethylene vinyl acetate (EVA), were exposed for more than 1200 hours in a controlled 85 C/85 percent RH environment, with a constant 500 volts applied between the cells and an aluminum frame. Plotting power output reduction versus charge transferred reveals that about 50 percent a-Si cell failures can be expected with the passage of 0.1 to 1.0 Coulomb/cm of cell-frame edge length; this threshold is somewhat less than that determined for C-Si modules.

  14. The reliability and stability of multijunction amorphous silicon PV modules

    SciTech Connect

    Carlson, D.E.

    1995-11-01

    Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies are about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.

  15. Amorphous silicon based large format uncooled FPA microbolometer technology

    NASA Astrophysics Data System (ADS)

    Schimert, T.; Brady, J.; Fagan, T.; Taylor, M.; McCardel, W.; Gooch, R.; Ajmera, S.; Hanson, C.; Syllaios, A. J.

    2008-04-01

    This paper presents recent developments in next generation microbolometer Focal Plane Array (FPA) technology at L-3 Communications Infrared Products (L-3 CIP). Infrared detector technology at L-3 CIP is based on hydrogenated amorphous silicon (a-Si:H) and amorphous silicon germanium(a-SiGe:H). Large format high performance, fast, and compact IR FPAs are enabled by a low thermal mass pixel design; favorable material properties; an advanced ROIC design; and wafer level packaging. Currently at L-3 CIP, 17 micron pixel FPA array technology including 320x240, 640 x 480 and 1024 x768 arrays is under development. Applications of these FPAs range from low power microsensors to high resolution near-megapixel imager systems.

  16. Spherical silicon photonic microcavities: From amorphous to polycrystalline

    NASA Astrophysics Data System (ADS)

    Fenollosa, R.; Garín, M.; Meseguer, F.

    2016-06-01

    Shaping silicon as a spherical object is not an obvious task, especially when the object size is in the micrometer range. This has the important consequence of transforming bare silicon material in a microcavity, so it is able to confine light efficiently. Here, we have explored the inside volume of such microcavities, both in their amorphous and in their polycrystalline versions. The synthesis method, which is based on chemical vapor deposition, causes amorphous microspheres to have a high content of hydrogen that produces an onionlike distributed porous core when the microspheres are crystallized by a fast annealing regime. This substantially influences the resonant modes. However, a slow crystallization regime does not yield pores, and produces higher-quality-factor resonances that could be fitted to the Mie theory. This allows the establishment of a procedure for obtaining size calibration standards with relative errors of the order of 0.1%.

  17. Amorphous-silicon thin-film heterojunction solar cells

    SciTech Connect

    Cretella, M. C.; Gregory, J. A.; Sandstrom, D. B.; Paul, W.

    1981-01-01

    The investigation of amorphous silicon materials at MTSEC has had two major thrusts: (1) to improve the amorphous material, i.e., obtain a low state density in the gap, improve the carrier collection depth and diminish non-radiative recombinations; and (2) to attempt to understand and improve on the limitations of the junction devices while evaluating the amorphous silicon materials. In the first of these efforts, the investigation has continued to examine the modifications to the a-Si(H) network by alloying silicon with other group IVA elements, either in binary or ternary compositions, and/or by replacing the hydrogenation for defect compensation with a combination of hydrogenation and alkylation or hydrogenation and halogenation. The doped junction layers are being examined in an attempt to determine the limiting characteristics of the junctions in solar cell devices of these amorphous materials. Amorphous alloys of Si-Ge, Si-C, Si-Sn were prepared as well as ternary compositions of Si-Ge-C and Si-Sn-C. In addition, Na vapor was added to the gas feed to deposit a-Si(Na, H) films, and to prepare Si-Sn, fluoride was added along with the tin by vapor additions of SnF/sub 4/ to the gas feed. The optical properties of these materials were measured, and structural and compositional information was obtained from the IR vibrational spectra using the scanning electron microscope and from analyses using scanning Auger microscopy. Electrical measurements have included the dark conductivity and the photo conductivity under room fluorescent light and at AM1 conditions. With alloys that displayed promising photoconductive properties n-i-p devices were prepared to assess the solar cell properties. Details are presented. (WHK)

  18. Advances and opportunities in the amorphous silicon research field

    SciTech Connect

    Sabisky, E.; Wallace, W.; Mikhall, A.; Mahan, H.; Tsuo, S.

    1984-05-01

    The amorphous materials and thin-film solar cells program was initiated by the US Department of Energy in 1978 and then transferred to the Solar Energy Research Institute. The aim of the present DOE/SERI program is to achieve 5-year DOE research goals by addressing photovoltaic research in single-junction amorphous thin films as well as the most promising option in high-efficiency, multijunction solar cells. Multiyear subcontract awards initiated in 1983 were designed to demonstrate a stable, small-area, p-i-n solar cell of at least 12% (AMI) efficiency, a stable submodule of at least 8% (AMI) efficiency, a stable submodule of at least 8% (AMI) efficiency (total area, 1000 cm/sup 2/), and a proof-of-concept multijunction amorphous silicon alloy thin-film solar cell that will lead to achieving an 18% efficiency goal in 1988.

  19. Amorphization and defect recombination in ion implanted silicon carbide

    SciTech Connect

    Grimaldi, M.G.; Calcagno, L.; Musumeci, P.; Frangis, N.; Van Landuyt, J.

    1997-06-01

    The damage produced in silicon carbide single crystals by ion implantation was investigated by Rutherford backscattering channeling and transmission electron microscopy techniques. Implantations were performed at liquid nitrogen and at room temperatures with several ions to examine the effect of the ion mass and of the substrate temperature on the damaging process. The damage accumulation is approximately linear with fluence until amorphization occurs when the elastic energy density deposited by the ions overcomes a critical value. The critical energy density for amorphization depends on the substrate temperature and is greatest at 300 K indicating that defects recombination occurs already at room temperature. Formation of extended defects never occurred and point defects and uncollapsed clusters of point defects were found before amorphization even in the case of light ion implantation. The atomic displacement energy has been estimated to be {approximately}12 eV/atom from the analysis of the damage process in dilute collision cascades. {copyright} {ital 1997 American Institute of Physics.}

  20. Simplifying EPID dosimetry for IMRT treatment verification

    SciTech Connect

    Pecharroman-Gallego, R.; Mans, Anton; Sonke, Jan-Jakob; Stroom, Joep C.; Olaciregui-Ruiz, Igor; Herk, Marcel van; Mijnheer, Ben J.

    2011-02-15

    Purpose: Electronic portal imaging devices (EPIDs) are increasingly used for IMRT dose verification, both pretreatment and in vivo. In this study, an earlier developed backprojection model has been modified to avoid the need for patient-specific transmission measurements and, consequently, leads to a faster procedure. Methods: Currently, the transmission, an essential ingredient of the backprojection model, is estimated from the ratio of EPID measurements with and without a phantom/patient in the beam. Thus, an additional irradiation to obtain ''open images'' under the same conditions as the actual phantom/patient irradiation is required. However, by calculating the transmission of the phantom/patient in the direction of the beam instead of using open images, this extra measurement can be avoided. This was achieved by using a model that includes the effect of beam hardening and off-axis dependence of the EPID response on photon beam spectral changes. The parameters in the model were empirically obtained by performing EPID measurements using polystyrene slab phantoms of different thickness in 6, 10, and 18 MV photon beams. A theoretical analysis to verify the sensitivity of the model with patient thickness changes was performed. The new model was finally applied for the analysis of EPID dose verification measurements of step-and-shoot IMRT treatments of head and neck, lung, breast, cervix, prostate, and rectum patients. All measurements were carried out using Elekta SL20i linear accelerators equipped with a hydrogenated amorphous silicon EPID, and the IMRT plans were made using PINNACLE software (Philips Medical Systems). Results: The results showed generally good agreement with the dose determined using the old model applying the measured transmission. The average differences between EPID-based in vivo dose at the isocenter determined using either the new model for transmission and its measured value were 2.6{+-}3.1%, 0.2{+-}3.1%, and 2.2{+-}3.9% for 47 patients

  1. Charged particle detectors made from thin layers of amorphous silicon

    SciTech Connect

    Morel, J.R.

    1986-05-01

    A series of experiments was conducted to determine the feasibility of using hydrogenated amorphous silicon (..cap alpha..-Si:H) as solid state thin film charged particle detectors. /sup 241/Am alphas were successfully detected with ..cap alpha..-Si:H devices. The measurements and results of these experiments are presented. The problems encountered and changes in the fabrication of the detectors that may improve the performance are discussed.

  2. Corrosion In Amorphous-Silicon Solar Cells And Modules

    NASA Technical Reports Server (NTRS)

    Mon, Gordon R.; Wen, Liang-Chi; Ross, Ronald G., Jr.

    1988-01-01

    Paper reports on corrosion in amorphous-silicon solar cells and modules. Based on field and laboratory tests, discusses causes of corrosion, ways of mitigating effects, and consequences for modules already in field. Suggests sealing of edges as way of reducing entry of moisture. Cell-free perimeters or sacrificial electrodes suggested to mitigate effects of sorbed moisture. Development of truly watertight module proves to be more cost-effective than attempting to mitigate effects of moisture.

  3. Optically induced conductivity changes in amorphous silicon: A historical perspective

    SciTech Connect

    Staebler, D.L.

    1997-07-01

    A historical perspective of the discovery of optically induced changes in amorphous silicon is presented in this paper from my personal point of view. It includes the story of how Chris Wronski and the author discovered the effect, the key elements in the R and D environment that lead to the quick realization that the effect was reversible and reproducible, how the research environment supported the rapid publication of their first paper, and a brief look at the effect from today's perspective.

  4. Electron trapping in amorphous silicon: A quantum molecular dynamics study

    SciTech Connect

    Yang, Lin H.; Kalia, R.K.; Vashishta, P.

    1990-12-01

    Quantum molecular dynamics (QMD) simulations provide the real-time dynamics of electrons and ions through numerical solutions of the time-dependent Schrodinger and Newton equations, respectively. Using the QMD approach we have investigated the localization behavior of an excess electron in amorphous silicon at finite temperatures. For time scales on the order of a few picoseconds, we find the excess electron is localized inside a void of radius {approximately}3 {Angstrom} at finite temperatures. 12 refs.

  5. Advances in amorphous silicon alloy multijunction cells and modules

    SciTech Connect

    Guha, S.; Yang, J.; Banerjee, A.; Glatfelter, T.; Hoffman, K.; Xu, X.

    1996-01-01

    We discuss the research directions taken to improve the stable efficiency of amorphous silicon alloy multijunction modules. Use of hydrogen dilution during deposition has resulted in improvement of initial efficiency and stability of the component cells in the triple-junction structure. An innovative laser-interconnected module design has resulted in the reduction of optical and electrical losses in the module down to 1{percent}. {copyright} {ital 1996 American Institute of Physics.}

  6. Detection of charged particles in amorphous silicon layers

    SciTech Connect

    Kaplan, S.N.; Morel, J.R.; Mulera, T.A.; Perez-Mendez, V.; Schnurmacher, G.; Street, R.A.

    1985-10-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics. 4 refs., 7 figs.

  7. Enhanced Multiple Exciton Generation in Amorphous Silicon Nanoparticles

    NASA Astrophysics Data System (ADS)

    Kryjevski, Andrei; Mihaylov, Deyan; Kilin, Dmitri

    2015-03-01

    Multiple exciton generation (MEG) in nm-sized hydrogen-passivated silicon nanowires (NWs), and quasi two-dimensional nanofilms depends strongly on the degree of the core structural disorder as shown by the many-body perturbation theory (MBPT) calculations based on the DFT simulations. Here, we use the HSE exchange correlation functional. In MBPT, we work to the 2nd order in the electron-photon coupling and in the approximate screened Coulomb interaction. We also include the effect of excitons for which we solve Bethe-Salpeter Equation. We calculate quantum efficiency (QE), the average number of excitons created by a single absorbed photon, in 3D arrays of Si29H36 quantum dots, NWs, and quasi 2D silicon nanofilms, all with both crystalline and amorphous core structures. Efficient MEG with QE of 1.3 up to 1.8 at the photon energy of about 3Eg , where Eg is the gap, is predicted in these nanoparticles except for the crystalline NW and film where QE ~= 1 . MEG in the amorphous nanoparticles is enhanced by the electron localization due to structural disorder. The exciton effects significantly red-shift QE (Ephoton) curves. Nanometer-sized amorphous silicon NWs and films are predicted to have effective MEG within the solar spectrum range. We acknowledge NSF support (CHE-1413614) for method development.

  8. Dose-to-water conversion for the backscatter-shielded EPID: A frame-based method to correct for EPID energy response to MLC transmitted radiation

    SciTech Connect

    Zwan, Benjamin J. O’Connor, Daryl J.; King, Brian W.; Greer, Peter B.

    2014-08-15

    Purpose: To develop a frame-by-frame correction for the energy response of amorphous silicon electronic portal imaging devices (a-Si EPIDs) to radiation that has transmitted through the multileaf collimator (MLC) and to integrate this correction into the backscatter shielded EPID (BSS-EPID) dose-to-water conversion model. Methods: Individual EPID frames were acquired using a Varian frame grabber and iTools acquisition software then processed using in-house software developed inMATLAB. For each EPID image frame, the region below the MLC leaves was identified and all pixels in this region were multiplied by a factor of 1.3 to correct for the under-response of the imager to MLC transmitted radiation. The corrected frames were then summed to form a corrected integrated EPID image. This correction was implemented as an initial step in the BSS-EPID dose-to-water conversion model which was then used to compute dose planes in a water phantom for 35 IMRT fields. The calculated dose planes, with and without the proposed MLC transmission correction, were compared to measurements in solid water using a two-dimensional diode array. Results: It was observed that the integration of the MLC transmission correction into the BSS-EPID dose model improved agreement between modeled and measured dose planes. In particular, the MLC correction produced higher pass rates for almost all Head and Neck fields tested, yielding an average pass rate of 99.8% for 2%/2 mm criteria. A two-sample independentt-test and fisher F-test were used to show that the MLC transmission correction resulted in a statistically significant reduction in the mean and the standard deviation of the gamma values, respectively, to give a more accurate and consistent dose-to-water conversion. Conclusions: The frame-by-frame MLC transmission response correction was shown to improve the accuracy and reduce the variability of the BSS-EPID dose-to-water conversion model. The correction may be applied as a preprocessing step

  9. Femtosecond studies of plasma formation in crystalline and amorphous silicon

    NASA Astrophysics Data System (ADS)

    Kuett, Waldemar; Esser, Anton; Seibert, Klaus; Lemmer, Uli; Kurz, Heinrich

    1990-08-01

    Transient pump-probe reflectivity measurements are performed on crystalline and amorphous Silicon samples with 50 fs optical pulses at 2 eV. The excited carrier densities range from 1017cm3 up to a few 1021cm3. In both cases the reflectivity signal is dominated by a Drude-like carrier response. Crystalline Silicon shows a distinct subpicosecond feature due to the cooling of the optically excited hot carriers with a time constant of 200-300 fs. Diffusion and Auger-recombination come into play at higher carrier densities. A superlinear increase of instant reflectivity signal with excitation fluence is due to two-photon absorption (TPA) with a TPA-coeffiecient f:37+-5 cm/GW. In amorphous Silicon the TPA process is not observable. The recovery of the induced negative reflectivity changes is dominated by trapping into bandtail and defect states at lower carrier densities. At higher densities a non-radiative recombination process dominates the relaxation of free carriers in both materials. Comparison with crystalline Silicon clearly demonstrates the enhancement of the Auger-recombination process in disordered materials by more than an order of magnitude.

  10. Electron-beam-induced information storage in hydrogenated amorphous silicon devices

    DOEpatents

    Yacobi, B.G.

    1985-03-18

    A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.

  11. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOEpatents

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  12. The U.S. and Japanese amorphous silicon technology programs A comparison

    NASA Technical Reports Server (NTRS)

    Shimada, K.

    1984-01-01

    The U.S. Department of Energy/Solar Energy Research Institute Amorphous Silicon (a-Si) Solar Cell Program performs R&D on thin-film hydrogenated amorphous silicon for eventual development of stable amorphous silicon cells with 12 percent efficiency by 1988. The Amorphous Silicon Solar Cell Program in Japan is sponsored by the Sunshine Project to develop an alternate energy technology. While the objectives of both programs are to eventually develop a-Si photovoltaic modules and arrays that would produce electricity to compete with utility electricity cost, the U.S. program approach is research oriented and the Japanese is development oriented.

  13. Experimental investigation of the response of an a-Si EPID to an unflattened photon beam from an Elekta Precise linear accelerator

    SciTech Connect

    Tyner, Elaine; McClean, Brendan; McCavana, Patrick; Wetterstedt, Sacha af

    2009-04-15

    The characteristics of an Elekta amorphous silicon (a-Si) electronic portal imaging device (EPID) in response to a 6 MV photon beam generated without a flattening filter, an unflattened beam, have been determined. The characteristics were then compared to those for a conventional photon beam generated with a flattening filter in the beam, a flattened beam, in order to determine the suitability of an a-Si EPID for transit dosimetry. The response of the EPID to the unflattened beam increased by 7.3% compared to the flattened beam, and copper buildup of 3 mm reduces the variation in the EPID response over air gaps ranging from 60 to 40 cm to within 2.5%. The scattering properties of the EPID with changing field size for the unflattened beam agree with those measured for a flattened beam to within 2%. Due to the minimal variation in the energy spectrum of the unflattened beam with the distance from the central axis, it was expected and experimentally found that the profile shape of the unflattened beam changes minimally with increasing phantom thickness. For an unflattened beam, EPID measured profiles with and without a phantom in the beam agree to within 2% using confidence limits. The difference between EPID and ionization chamber profiles measured at a depth of 5 cm in water is reduced compared to a flattened beam and remains unchanged with increasing phantom thickness. A difference of 4% was found between EPID profiles and the corresponding profiles measured with an ionization chamber measured in water over a range of phantom thickness. A calibration procedure was developed to convert EPID images to the equivalent absolute dose in water, at the EPID plane. A gamma evaluation was performed comparing the calibrated EPID images to dose measured with an ionization chamber array for rectangular fields and an IMRT segment. The fields were situated on axis and at 5 cm off axis with and without a 25 cm thick phantom in the beam. The gamma evaluation criteria of 3% and 3 mm

  14. Grain boundary resistance to amorphization of nanocrystalline silicon carbide.

    PubMed

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-01-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized. PMID:26558694

  15. Grain boundary resistance to amorphization of nanocrystalline silicon carbide

    NASA Astrophysics Data System (ADS)

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-11-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized.

  16. Grain boundary resistance to amorphization of nanocrystalline silicon carbide

    PubMed Central

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-01-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized. PMID:26558694

  17. Amorphous silicon technology improvement at CEA-LETI

    NASA Astrophysics Data System (ADS)

    Mottin, Eric; Bain, Astrid; Castelein, Pierre; Ouvrier-Buffet, Jean-Louis; Tissot, Jean-Luc; Yon, Jean-Jacques; Chatard, Jean-Pierre

    2002-05-01

    The emergence of uncooled infrared detectors has opened new opportunities for IR imaging both for military and civil applications. Infrared imaging sensors that operate without cryogenic cooling have the potential to provide the military or civilian users with infrared vision capabilities packaged in a camera of extremely small size, weight and power. Uncooled infrared sensor technology has advanced rapidly in the past few years. Higher performance sensors, electronics integration at the sensor, and new concepts for signal processing are generating advanced infrared focal plane arrays. This would significantly reduce the cost and accelerate the implementation of sensors for applications such as surveillance or predictive maintenance. We present the uncooled infrared detector operation principle and the development at CEA/LETI from the 256 x 64 with a pitch of 50 micrometers to the 320 x 240 with a pitch of 35 micrometers . LETI has been involved in Amorphous Silicon uncooled microbolometer development since 1992. This silicon IR detection is now well mastered and matured so that industrial transfer of LETI technology was performed in 2000 towards Sofradir. Industrial production of 320 x 240 microbolometer array with 45micrometers pitch is then started. After a description of the technology and the methodology for reliability enhancement, we present the readout circuit architectures designs and its evolution from the 256 x 64 array to the different version of 320 x 240 arrays. Electro-optical results obtained from these IRCMOS are presented. NEDT close to 30 mK is now obtained with our standard microbolometer amorphous silicon technology.

  18. Ultralight amorphous silicon alloy photovoltaic modules for space applications

    NASA Technical Reports Server (NTRS)

    Hanak, J. J.; Chen, Englade; Fulton, C.; Myatt, A.; Woodyard, J. R.

    1987-01-01

    Ultralight and ultrathin, flexible, rollup monolithic PV modules have been developed consisting of multijunction, amorphous silicon alloys for either terrestrial or aerospace applications. The rate of progress in increasing conversion efficiency of stable multijunction and multigap PV cells indicates that arrays of these modules can be available for NASA's high power systems in the 1990's. Because of the extremely light module weight and the highly automated process of manufacture, the monolithic a-Si alloy arrays are expected to be strongly competitive with other systems for use in NASA's space station or in other large aerospace applications.

  19. Radiation damage and annealing of amorphous silicon solar cells

    NASA Technical Reports Server (NTRS)

    Byvik, C. E.; Slemp, W. S.; Smith, B. T.; Buoncristiani, A. M.

    1984-01-01

    Amorphous silicon solar cells were irradiated with 1 MeV electrons at the Space Environmental Effects Laboratory of the NASA Langley Research Center. The cells accumulated a total fluence of 10 to the 14th, 10 to the 15th, and 10 to the 16th electrons per square centimeter and exhibited increasing degradation with each irradiation. This degradation was tracked by evaluating the I-V curves for AM0 illumination and the relative spectral response. The observed radiation damage was reversed following an anneal of the cells under vacuum at 200 C for 2 hours.

  20. Progress in amorphous silicon multijunction research at solarex

    SciTech Connect

    Arya, R.R.; Carlson, D.E.; Yang, L.; Chen, L.F.; Willing, F.; Rajan, K.; Jansen, K.; Poplawski, C.; Bradley, D.; Wood, G.

    1997-02-01

    Large strides have been made at Solarex inadvancing amorphous silicon multijunction technology to a maturity level where large-area commercial modules are technically and economically viable. Tandem junction modules (4ft{sup 2}) have been demonstrated with average stabilized efficiency of 8{percent}. While maintaining stabilized efficiency the a-Si alloy deposition time has been reduced by 28{percent} and the material usage reduced by 38{percent}. Progress has also been made in understanding and improving ZnO front contact and stability. {copyright} {ital 1997 American Institute of Physics.}

  1. Progress in amorphous silicon PV technology: An update

    SciTech Connect

    Luft, W.; Branz, H.M.; Dalal, V.L.; Hegedus, S.S.; Schiff, E.A.

    1995-07-01

    To reach the 15% stabilized efficiency goal for amorphous silicon (a-Si) modules by the year 2005, the National Renewable Energy Laboratory has established four research teams. The teams -- with members from industry, universities, and NREL -- have been in operation for 2.5 years now. Consensus has been reached that a triple-junction a-Si structure is needed to reach the efficiency goal. Performance parameter goals for the overall structure and the three component cells have been formulated. All four teams have generated their own development plans. Individual team progress relative to the plans is reported.

  2. Structural properties of amorphous silicon produced by electron irradiation

    SciTech Connect

    Yamasaki, J.; Takeda, S.

    1999-07-01

    The structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550 C.

  3. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    NASA Astrophysics Data System (ADS)

    Dang, Z. Y.; Breese, M. B. H.; Lin, Y.; Tok, E. S.; Vittone, E.

    2014-05-01

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  4. Diffusion length measurements of thin amorphous silicon layers

    NASA Astrophysics Data System (ADS)

    van den Heuvel, J. C.; van Oort, R. C.; Geerts, M. J.

    1989-02-01

    A new method for the analysis of diffusion length measurements by the Surface Photovoltage (SPV) method is presented. It takes into account the effect of the reflection of light from the back contact in thin layers and the effect of a finite bandwidth of the used interference filters. The model was found to agree with experiments on thin amorphous silicon (a-Si:H) layers. It is shown that in the region were these effects are negligible this method is equivalent to the standard method.

  5. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    SciTech Connect

    Dang, Z. Y.; Breese, M. B. H.; Lin, Y.; Tok, E. S.; Vittone, E.

    2014-05-12

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  6. Athermal shear-transformation-zone theory of amorphous plastic deformation. II. Analysis of simulated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Bouchbinder, Eran; Langer, J. S.; Procaccia, Itamar

    2007-03-01

    In the preceding paper, we developed an athermal shear-transformation-zone (STZ) theory of amorphous plasticity. Here we use this theory in an analysis of numerical simulations of plasticity in amorphous silicon by Demkowicz and Argon (DA). In addition to bulk mechanical properties, those authors observed internal features of their deforming system that challenge our theory in important ways. We propose a quasithermodynamic interpretation of their observations in which the effective disorder temperature, generated by mechanical deformation well below the glass temperature, governs the behavior of other state variables that fall in and out of equilibrium with it. Our analysis points to a limitation of either the step-strain procedure used by DA in their simulations, or the STZ theory in its ability to describe rapid transients in stress-strain curves, or perhaps to both. Once we allow for this limitation, we are able to bring our theoretical predictions into accurate agreement with the simulations.

  7. Time dependent pre-treatment EPID dosimetry for standard and FFF VMAT

    NASA Astrophysics Data System (ADS)

    Podesta, Mark; Nijsten, Sebastiaan M. J. J. G.; Persoon, Lucas C. G. G.; Scheib, Stefan G.; Baltes, Christof; Verhaegen, Frank

    2014-08-01

    Methods to calibrate Megavoltage electronic portal imaging devices (EPIDs) for dosimetry have been previously documented for dynamic treatments such as intensity modulated radiotherapy (IMRT) using flattened beams and typically using integrated fields. While these methods verify the accumulated field shape and dose, the dose rate and differential fields remain unverified. The aim of this work is to provide an accurate calibration model for time dependent pre-treatment dose verification using amorphous silicon (a-Si) EPIDs in volumetric modulated arc therapy (VMAT) for both flattened and flattening filter free (FFF) beams. A general calibration model was created using a Varian TrueBeam accelerator, equipped with an aS1000 EPID, for each photon spectrum 6 MV, 10 MV, 6 MV-FFF, 10 MV-FFF. As planned VMAT treatments use control points (CPs) for optimization, measured images are separated into corresponding time intervals for direct comparison with predictions. The accuracy of the calibration model was determined for a range of treatment conditions. Measured and predicted CP dose images were compared using a time dependent gamma evaluation using criteria (3%, 3 mm, 0.5 sec). Time dependent pre-treatment dose verification is possible without an additional measurement device or phantom, using the on-board EPID. Sufficient data is present in trajectory log files and EPID frame headers to reliably synchronize and resample portal images. For the VMAT plans tested, significantly more deviation is observed when analysed in a time dependent manner for FFF and non-FFF plans than when analysed using only the integrated field. We show EPID-based pre-treatment dose verification can be performed on a CP basis for VMAT plans. This model can measure pre-treatment doses for both flattened and unflattened beams in a time dependent manner which highlights deviations that are missed in integrated field verifications.

  8. A global calibration model for a-Si EPIDs used for transit dosimetry.

    PubMed

    Nijsten, S M J J G; van Elmpt, W J C; Jacobs, M; Mijnheer, B J; Dekker, A L A J; Lambin, P; Minken, A W H

    2007-10-01

    Electronic portal imaging devices (EPIDs) are not only applied for patient setup verification and detection of organ motion but are also increasingly used for dosimetric verification. The aim of our work is to obtain accurate dose distributions from a commercially available amorphous silicon (a-Si) EPID for transit dosimetry applications. For that purpose, a global calibration model was developed, which includes a correction procedure for ghosting effects, field size dependence and energy dependence of the a-Si EPID response. In addition, the long-term stability and additional buildup material for this type of EPID were determined. Differences in EPID response due to photon energy spectrum changes have been measured for different absorber thicknesses and field sizes, yielding off-axis spectrum correction factors based on transmission measurements. Dose measurements performed with an ionization chamber in a water tank were used as reference data, and the accuracy of the dosimetric calibration model was determined for a large range of treatment conditions. Gamma values using 3% as dose-difference criterion and 3 mm as distance-to-agreement criterion were used for evaluation. The field size dependence of the response could be corrected by a single kernel, fulfilling the gamma evaluation criteria in case of virtual wedges and intensity modulated radiation therapy fields. Differences in energy spectrum response amounted up to 30%-40%, but could be reduced to less than 3% using our correction model. For different treatment fields and (in)homogeneous phantoms, transit dose distributions satisfied in almost all situations the gamma criteria. We have shown that a-Si EPIDs can be accurately calibrated for transit dosimetry purposes. PMID:17985633

  9. Transit dosimetry in IMRT with an a-Si EPID in direct detection configuration

    NASA Astrophysics Data System (ADS)

    Sabet, Mahsheed; Rowshanfarzad, Pejman; Vial, Philip; Menk, Frederick W.; Greer, Peter B.

    2012-08-01

    In this study an amorphous silicon electronic portal imaging device (a-Si EPID) converted to direct detection configuration was investigated as a transit dosimeter for intensity modulated radiation therapy (IMRT). After calibration to dose and correction for a background offset signal, the EPID-measured absolute IMRT transit doses for 29 fields were compared to a MatriXX two-dimensional array of ionization chambers (as reference) using Gamma evaluation (3%, 3 mm). The MatriXX was first evaluated as reference for transit dosimetry. The accuracy of EPID measurements was also investigated by comparison of point dose measurements by an ionization chamber on the central axis with slab and anthropomorphic phantoms in a range of simple to complex fields. The uncertainty in ionization chamber measurements in IMRT fields was also investigated by its displacement from the central axis and comparison with the central axis measurements. Comparison of the absolute doses measured by the EPID and MatriXX with slab phantoms in IMRT fields showed that on average 96.4% and 97.5% of points had a Gamma index<1 in head and neck and prostate fields, respectively. For absolute dose comparisons with anthropomorphic phantoms, the values changed to an average of 93.6%, 93.7% and 94.4% of points with Gamma index<1 in head and neck, brain and prostate fields, respectively. Point doses measured by the EPID and ionization chamber were within 3% difference for all conditions. The deviations introduced in the response of the ionization chamber in IMRT fields were<1%. The direct EPID performance for transit dosimetry showed that it has the potential to perform accurate, efficient and comprehensive in vivo dosimetry for IMRT.

  10. Lithium concentration dependent structure and mechanics of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Sitinamaluwa, H. S.; Wang, M. C.; Will, G.; Senadeera, W.; Zhang, S.; Yan, C.

    2016-06-01

    A better understanding of lithium-silicon alloying mechanisms and associated mechanical behavior is essential for the design of Si-based electrodes for Li-ion batteries. Unfortunately, the relationship between the dynamic mechanical response and microstructure evolution during lithiation and delithiation has not been well understood. We use molecular dynamic simulations to investigate lithiated amorphous silicon with a focus to the evolution of its microstructure, phase composition, and stress generation. The results show that the formation of LixSi alloy phase is via different mechanisms, depending on Li concentration. In these alloy phases, the increase in Li concentration results in reduction of modulus of elasticity and fracture strength but increase in ductility in tension. For a LixSi system with uniform Li distribution, volume change induced stress is well below the fracture strength in tension.

  11. Optical absorption of ion-beam sputtered amorphous silicon coatings

    NASA Astrophysics Data System (ADS)

    Steinlechner, Jessica; Martin, Iain W.; Bassiri, Riccardo; Bell, Angus; Fejer, Martin M.; Hough, Jim; Markosyan, Ashot; Route, Roger K.; Rowan, Sheila; Tornasi, Zeno

    2016-03-01

    Low mechanical loss at low temperatures and a high index of refraction should make silicon optimally suited for thermal noise reduction in highly reflective mirror coatings for gravitational wave detectors. However, due to high optical absorption, amorphous silicon (aSi) is unsuitable for being used as a direct high-index coating material to replace tantala. A possible solution is a multimaterial design, which enables exploitation of the excellent mechanical properties of aSi in the lower coating layers. The possible number of aSi layers increases with absorption reduction. In this work, the optimum heat treatment temperature of aSi deposited via ion-beam sputtering was investigated and found to be 450 °C . For this temperature, the absorption after deposition of a single layer of aSi at 1064 nm and 1550 nm was reduced by more than 80%.

  12. Chemical vapor deposition of hydrogenated amorphous silicon from disilane

    SciTech Connect

    Bogaert, R.J.; Russell, T.W.F.; Klein, M.T. . Dept. of Chemical Engineering); Rocheleau, R.E.; Baron, B.N. . Inst. of Energy Conversion)

    1989-10-01

    The authors describe hydrogenated amorphous silicon (a-Si:H) thin films deposited at growth rates of 1 to 30 A/s by chemical vapor deposition (CVD) from disilane source gas at 24 torr total pressure in a tubular reactor. The effects of substrate temperature and gas holding time (flow rate) on film growth rate and effluent gas composition were measured at temperatures ranging from 360{sup 0} to 485{sup 0}C and gas holding times from 3 to 62s. Effluent gases determined by gas chromatography included silane, disilane and other higher order silanes. A chemical reaction engineering model, based on a silylene (SiH/sub 2/) insertion gas phase reaction network and film growth from both SiH/sub 2/ and high molecular weight silicon species, Si/sub n/H/sub 2n/, was developed. The model predictions were in good agreement with experimentally determined growth rates and effluent gas compositions.

  13. Chemical vapor deposition of boron-doped hydrogenated amorphous silicon

    SciTech Connect

    Ellis F.B. Jr.; Delahoy, A.E.

    1985-07-15

    Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300 /sup 0/C. A typical open circuit voltage in an all CVD p-i-n device is 0.70--0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8--0.83 V.

  14. Amorphous silicon-carbon alloys and amorphous carbon from direct methane and ethylene activation by ECR

    SciTech Connect

    Conde, J.P.; Chu, V.; Giorgis, F.; Pirri, C.F.; Arekat, S.

    1997-07-01

    Hydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition. Hydrogen is introduced into the source resonance cavity as an excitation gas. Silane is introduced in the main chamber in the vicinity of the plasma stream, whereas the carbon source gases, methane or ethylene, are introduced either with the silane or with the hydrogen as excitation gases. The effect of the type of carbon-source gas, excitation gas mixture and silane-to-carbon source gas flow ratio on the deposition rate, bandgap, subgap density of states, spin density and hydrogen evolution are studied.

  15. Chemical vapor deposition of amorphous silicon films from disilane

    SciTech Connect

    Bogaert, R.J.

    1986-01-01

    Amorphous silicon films for fabrication of solar cells have been deposited by thermal chemical vapor deposition (CVD) from disilane (Si/sub 2/H/sub 6/) using a tubular flow reactor. A mathematical description for the CVD reactor was developed and solved by a numerical procedure. The proposed chemical reaction network for the model is based on silylene (SiH/sub 2/) insertion in the gas phase and film growth from SiH/sub 2/ and silicon polymers (Si/sub n/N/sub 2n/, n approx. 10). Estimates of the rate constants have been obtained for trisilane decomposition, silicon polymer formation, and polymer dehydrogenation. The silane unimolecular decomposition rate constants were corrected for pressure effects. The model behavior is compared to the experimental results over the range of conditions: reactor temperature (360 to 485/sup 0/C), pressures (2 to 48 torr), and gas holding time (1 to 70 s). Within the above range of conditions, film growth rate varies from 0.01 to 30 A/s. Results indicate that silicon polymers are the main film precursors for gas holding times greater than 3 s. Film growth by silylene only becomes important at short holding times, large inert gas dilution, and positions near the beginning of the reactor hot zone.

  16. Hydrogen structures in heavily hydrogenated crystalline and amorphous silicon

    SciTech Connect

    Jackson, W.G.; Franz, A.; Chabal, Y.; Weldon, M.K.; Jin, H.C.; Abelson, J.R.

    1998-12-31

    The hydrogen binding energy distribution and IR spectra of hydrogen platelets in c-Si have been measured and compared to H in other forms of silicon including hydrogenated polycrystalline and amorphous Si. The binding distribution for platelet containing samples, determined using H evolution, exhibits two peaks: a bulk peak at 1.8--1.9 eV below the transport barrier, and a second possibly surface related peak 1.8--1.9 eV below the surface evolution barrier. The bulk peak grows at 250 C and is consistent with calculated energies for platelet structures. The same two evolution peaks are found in hydrogenated polycrystalline Si and amorphous silicon. The IR spectra for heavily hydrogenated c-Si are dominated by the stretching modes at 2076 and 2128 cm{sup {minus}1}. Most surprisingly there appears to be a strong mode at 856 cm{sup {minus}1} which is associated with a deformation mode of SiH{sub 3}. Even more surprising, this SiH{sub 3} 856 cm{sup {minus}1} mode remains until 550 C indicating that the SiH{sub 3} containing structures are rather stable.

  17. Geometric photovoltaics applied to amorphous silicon thin film solar cells

    NASA Astrophysics Data System (ADS)

    Kirkpatrick, Timothy

    Geometrically generalized analytical expressions for device transport are derived from first principles for a photovoltaic junction. Subsequently, conventional planar and unconventional coaxial and hemispherical photovoltaic architectures are applied to detail the device physics of the junction based on their respective geometry. For the conventional planar cell, the one-dimensional transport equations governing carrier dynamics are recovered. For the unconventional coaxial and hemispherical junction designs, new multi-dimensional transport equations are revealed. Physical effects such as carrier generation and recombination are compared for each cell architecture, providing insight as to how non-planar junctions may potentially enable greater energy conversion efficiencies. Numerical simulations are performed for arrays of vertically aligned, nanostructured coaxial and hemispherical amorphous silicon solar cells and results are compared to those from simulations performed for the standard planar junction. Results indicate that fundamental physical changes in the spatial dependence of the energy band profile across the intrinsic region of an amorphous silicon p-i-n junction manifest as an increase in recombination current for non-planar photovoltaic architectures. Despite an increase in recombination current, however, the coaxial architecture still appears to be able to surpass the efficiency predicted for the planar geometry, due to the geometry of the junction leading to a decoupling of optics and electronics.

  18. Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

    NASA Technical Reports Server (NTRS)

    Kung, K. T.-Y.; Nicolet, M.-A.; Suni, I.

    1984-01-01

    The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samples varies between phi-bp = 0.47-0.42 V on p-type Si and between phi-bn = 0.63-0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum phi-bp + phi-bn always equals 1.12 V, within experimental error. After thermal treatment at 500 C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most approximately 0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.

  19. Theory of structural transformation in lithiated amorphous silicon.

    PubMed

    Cubuk, Ekin D; Kaxiras, Efthimios

    2014-07-01

    Determining structural transformations in amorphous solids is challenging due to the paucity of structural signatures. The effect of the transitions on the properties of the solid can be significant and important for applications. Moreover, such transitions may not be discernible in the behavior of the total energy or the volume of the solid as a function of the variables that identify its phases. These issues arise in the context of lithiation of amorphous silicon (a-Si), a promising anode material for high-energy density batteries based on lithium ions. Recent experiments suggest the surprising result that the lithiation of a-Si is a two-phase process. Here, we present first-principles calculations of the structure of a-Si at different lithiation levels. Through a detailed analysis of the short and medium-range properties of the amorphous network, using Voronoi-Delaunay methods and ring statistics, we show that a-LixSi has a fundamentally different structure below and above a lithiation level corresponding to x ∼ 2. PMID:24911996

  20. Anharmonicity Rise the Thermal Conductivity in Amorphous Silicon

    NASA Astrophysics Data System (ADS)

    Lv, Wei; Henry, Asegun

    We recently proposed a new method called Direct Green-Kubo Modal Analysis (GKMA) method, which has been shown to calculate the thermal conductivity (TC) of several amorphous materials accurately. A-F method has been widely used for amorphous materials. However, researchers have found out that it failed on several different materials. The missing component of A-F method is the harmonic approximation and considering only the interactions of modes with similar frequencies, which neglect interactions of modes with large frequency difference. On the contrary, GKMA method, which is based on molecular dynamics, intrinsically includes all types of phonon interactions. In GKMA method, each mode's TC comes from both mode self-correlations (autocorrelations) and mode-mode correlations (crosscorrelations). We have demonstrated that the GKMA predicted TC of a-Si from Tersoff potential is in excellent agreement with one of experimental results. In this work, we will present the GKMA applications on a-Si using multiple potentials and gives us more insight of the effect of anharmonicity on the TC of amorphous silicon. This research was supported Intel grant AGMT DTD 1-15-13 and computational resources by NSF supported XSEDE resources under allocations DMR130105 and TG- PHY130049.

  1. Sputtered pin amorphous silicon semi-conductor device and method therefor

    DOEpatents

    Moustakas, Theodore D.; Friedman, Robert A.

    1983-11-22

    A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

  2. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  3. Electron-beam-induced information storage in hydrogenated amorphous silicon device

    DOEpatents

    Yacobi, Ben G.

    1986-01-01

    A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.

  4. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    SciTech Connect

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  5. Mechanism of the growth of amorphous and microcrystalline silicon from silicon tetrafluoride and hydrogen

    NASA Astrophysics Data System (ADS)

    Okada, Y.; Chen, J.; Campbell, I. H.; Fauchet, P. M.; Wagner, S.

    1990-02-01

    We study the growth of amorphous (a-Si:H,F) and of microcrystalline (μc-Si) silicon over trench patterns in crystalline silicon substrates. We vary the conditions of the SiF4-H2 glow discharge from deposition to etching. All deposited films form lips at the trench mouth and are uniformly thick on the trench walls. Therefore, surface diffusion is not important. The results of a Monte Carlo simulation suggest that film growth is governed by a single growth species with a low (˜0.2) sticking coefficient, in combination with a highly reactive etching species.

  6. Monolithic amorphous silicon modules on continuous polymer substrate

    SciTech Connect

    Grimmer, D.P. )

    1992-03-01

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  7. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect

    Guha, S. )

    1992-09-01

    This report describes research on semiconductor and non-semiconductor materials to enhance the performance of multi-band-gap, multijunction panel with an area greater than 900 cm[sup 2] by 1992. Double-junction and triple-junction cells are mode on a Ag/ZnO back reflector deposited on stainless steel substrates. An a-SiGe alloy is used for the i-layer in the bottom and the middle cells; the top cell uses an amorphous silicon alloy. After the evaporation of an antireflection coating, silver grids and bus bars are put on the top surface and the panel is encapsulated in an ethylene vinyl acetate (EVA)/Tefzel structure to make a 1-ft[sup 2] monolithic module.

  8. Atomistic simulations of material damping in amorphous silicon nanoresonators

    NASA Astrophysics Data System (ADS)

    Mukherjee, Sankha; Song, Jun; Vengallatore, Srikar

    2016-06-01

    Atomistic simulations using molecular dynamics (MD) are emerging as a valuable tool for exploring dissipation and material damping in nanomechanical resonators. In this study, we used isothermal MD to simulate the dynamics of the longitudinal-mode oscillations of an amorphous silicon nanoresonator as a function of frequency (2 GHz–50 GHz) and temperature (15 K–300 K). Damping was characterized by computing the loss tangent with an estimated uncertainty of 7%. The dissipation spectrum displays a sharp peak at 50 K and a broad peak at around 160 K. Damping is a weak function of frequency at room temperature, and the loss tangent has a remarkably high value of ~0.01. In contrast, at low temperatures (15 K), the loss tangent increases monotonically from 4× {{10}-4} to 4× {{10}-3} as the frequency increases from 2 GHz to 50 GHz. The mechanisms of dissipation are discussed.

  9. ESR studies on hot-wire amorphous silicon

    SciTech Connect

    Unold, T.; Mahan, A.H.

    1997-07-01

    The authors measure a series of hot-wire (HW) amorphous silicon films grown with hydrogen contents C{sub H} varying between 0.5--17 at.%. From constant photocurrent method (CPM) measurements and the steady-state photocarrier grating method (SSPG) they find good agreement with previous measurements on similar hot-wire films. Electron spin resonance measurements on the same samples, however, yield significantly higher spin densities than expected. A thickness series indicates a highly defective layer close to the substrate interface. They propose that this defective layer may be due to excessive out diffusion of hydrogen during growth at high temperatures, as seen by secondary ion mass spectroscopy. ESR measurements on light-degraded samples indicate an improved stability of samples with C{sub H} < 9 at.%.

  10. Laser induced melting and crystallization of boron doped amorphous silicon

    SciTech Connect

    Nebel, C.E.; Schoeniger, S.; Dahlheimer, B.; Stutzmann, M.

    1997-07-01

    Transient reflectivity experiments have been performed to measure the dynamics of laser-induced melting of amorphous silicon (a-Si) and the crystallization to {micro}c-Si of films with different thicknesses on Corning 7059 glass. The laser-induced melting takes place with a velocity of 13 to 24 m/s, while the solidification is about a factor 10 slower. The crystallization starts at the Si/glass interface and at the surface. In the center of the films Si remains liquid for an extended period of time. The crystallization dynamics point towards an heterogeneous morphology of laser-crystallized Si, where the surface and the interface layers are composed of small grains and the bulk of larger grains.

  11. Radiation Resistance Studies of Amorphous Silicon Alloy Photovoltaic Materials

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1994-01-01

    The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys was investigated. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below lE14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

  12. Light-induced metastability in pure and hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Queen, D. R.; Liu, X.; Karel, J.; Wang, Q.; Crandall, R. S.; Metcalf, T. H.; Hellman, F.

    2015-10-01

    Light soaking is found to increase the specific heat C and internal friction Q-1 of pure (a-Si) and hydrogenated (a-Si:H) amorphous silicon. At the lowest temperatures, the increases in C and Q-1 are consistent with an increased density of two-level systems (TLS). The light-induced increase in C persists to room temperature. Neither the sound velocity nor shear modulus change with light soaking indicating that the Debye specific heat is unchanged which suggests that light soaking creates localized vibrational modes in addition to TLS. The increase can be reversibly added and removed by light soaking and annealing, respectively, suggesting that it is related to the Staebler-Wronski effect (SWE), even in a-Si without H, and involves a reversible nanoscale structural rearrangement that is facilitated by, but does not require, H to occur.

  13. High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

    PubMed Central

    Esmaeili-Rad, Mohammad R.; Salahuddin, Sayeef

    2013-01-01

    One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3–5 ms, thus making this heterojunction roughly 10X faster. A photoresponsivity of 210 mA/W is measured at green light, the wavelength used in commercial imaging systems, which is 2−4X larger than that of a-Si and best reported MoS2 devices. The device could find applications in large area electronics, such as biomedical imaging, where a fast response is critical. PMID:23907598

  14. Hydrogenated Amorphous Silicon (a-Si:H) Colloids

    SciTech Connect

    Harris, Justin T.; Hueso, Jose L.; Korgel, Brian A.

    2010-12-14

    Colloidal particles of hydrogenated amorphous silicon (a-Si:H) were synthesized by decomposition of trisilane (Si{sub 3}H{sub 8}) in supercritical n-hexane (sc-hexane) at temperatures ranging from 380 to 550 °C. The reaction temperature, pressure and Si{sub 3}H{sub 8} concentration have a significant influence on the average particle size, Si bond order and hydrogen content. The particle diameter could be varied from 170 nm to 1.7 μm, with hydrogen loadings between 10% and 58%. Raman spectroscopy of the particles revealed significant differences in Si bond order that correlated with hydrogen content, with the lowest reaction temperatures yielding particles with the least structural order and most associated hydrogen. Particles synthesized at temperatures higher than 420 °C had sufficient bond order to allow crystallization under the Raman laser probe.

  15. Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

    NASA Astrophysics Data System (ADS)

    Demaurex, Bénédicte; De Wolf, Stefaan; Descoeudres, Antoine; Charles Holman, Zachary; Ballif, Christophe

    2012-10-01

    Damage of the hydrogenated amorphous/crystalline silicon interface passivation during transparent conductive oxide sputtering is reported. This occurs in the fabrication process of silicon heterojunction solar cells. We observe that this damage is at least partially caused by luminescence of the sputter plasma. Following low-temperature annealing, the electronic interface properties are recovered. However, the silicon-hydrogen configuration of the amorphous silicon film is permanently changed, as observed from infra-red absorbance spectra. In silicon heterojunction solar cells, although the as-deposited film's microstructure cannot be restored after sputtering, no significant losses are observed in their open-circuit voltage.

  16. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    NASA Astrophysics Data System (ADS)

    Abdulraheem, Yaser; Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef

    2014-05-01

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties -including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed

  17. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    SciTech Connect

    Abdulraheem, Yaser; Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef

    2014-05-15

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed

  18. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

    1994-09-13

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

  19. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  20. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J. )

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  1. Temperature dependence of hydrogenated amorphous silicon solar cell performances

    NASA Astrophysics Data System (ADS)

    Riesen, Y.; Stuckelberger, M.; Haug, F.-J.; Ballif, C.; Wyrsch, N.

    2016-01-01

    Thin-film hydrogenated amorphous silicon solar (a-Si:H) cells are known to have better temperature coefficients than crystalline silicon cells. To investigate whether a-Si:H cells that are optimized for standard conditions (STC) also have the highest energy yield, we measured the temperature and irradiance dependence of the maximum power output (Pmpp), the fill factor (FF), the short-circuit current density (Jsc), and the open-circuit voltage (Voc) for four series of cells fabricated with different deposition conditions. The parameters varied during plasma-enhanced chemical vapor deposition (PE-CVD) were the power and frequency of the PE-CVD generator, the hydrogen-to-silane dilution during deposition of the intrinsic absorber layer (i-layer), and the thicknesses of the a-Si:H i-layer and p-type hydrogenated amorphous silicon carbide layer. The results show that the temperature coefficient of the Voc generally varies linearly with the Voc value. The Jsc increases linearly with temperature mainly due to temperature-induced bandgap reduction and reduced recombination. The FF temperature dependence is not linear and reaches a maximum at temperatures between 15 °C and 80 °C. Numerical simulations show that this behavior is due to a more positive space-charge induced by the photogenerated holes in the p-layer and to a recombination decrease with temperature. Due to the FF(T) behavior, the Pmpp (T) curves also have a maximum, but at a lower temperature. Moreover, for most series, the cells with the highest power output at STC also have the best energy yield. However, the Pmpp (T) curves of two cells with different i-layer thicknesses cross each other in the operating cell temperature range, indicating that the cell with the highest power output could, for instance, have a lower energy yield than the other cell. A simple energy-yield simulation for the light-soaked and annealed states shows that for Neuchâtel (Switzerland) the best cell at STC also has the best energy

  2. Consequences of the spectral response of an a-Si EPID and implications for dosimetric calibration

    SciTech Connect

    Kirkby, C.; Sloboda, R.

    2005-08-15

    One of the attractive features of amorphous silicon electronic portal imaging devices (a-Si EPIDs) as dosimetric tools is that for open fields they are known to exhibit a generally linear relation between pixel value and incident energy fluence as measured by an ion chamber. It has also been established that a-Si EPIDs incorporating high atomic number phosphors such as Gd{sub 2}O{sub 2}S:Tb exhibit a disproportionately large response to low-energy (<1 MeV) photons. The present work examines the consequences of this hypersensitivity in a commercially available EPID, the Varian aS500, with respect to energy fluence calibration in a 6 MV radiotherapy beam. EPIDs may be deployed in situations where the spectrum of the incident beam is modified by passing through a compensator or through a patient or phantom. By examining the specific case of a beam hardened by passage through compensator material, we show that the discrepancy between open and attenuated beam calibration curves can be as high as 8%. A Monte Carlo study using a comprehensive model of the aS500 shows that this difference can be explained by spectral changes, and further suggests that it can be reduced by the addition of an external copper plate. We consider configurations with the plate placed directly on top of the EPID cassette and 15 cm above the cassette, supported by Styrofoam. In order to reduce the maximum discrepancy to <4%, it was found that a copper thickness of {approx}0.7 cm was required in the elevated configuration. Improvement was minimal with the copper in the contact configuration. Adding 0.7 cm of copper in the elevated configuration reduced the contrast-to-noise ratio by 19% and the modulation transfer for a given spatial frequency by 30%.

  3. Controlled growth of nanocrystalline silicon within amorphous silicon carbide thin films

    NASA Astrophysics Data System (ADS)

    Kole, Arindam; Chaudhuri, Partha

    2014-04-01

    Controlled formation of nanocrystalline silicon (nc-Si) within hydrogenated amorphous silicon carbide (a-SiC:H) thin films has been demonstrated by a rf (13.56 MHz) plasma chemical vapour deposition (PECVD) method at a low deposition temperature of 200°C by regulating the deposition pressure (Pr) between 26.7 Pa and 133.3 Pa. Evolution of the size and the crystalline silicon volume fraction within the a-SiC:H matrix has been studied by XRD, Raman and HRTEM. The study reveals that at Pr of 26.7 Pa there are mostly isolated grains of nc-Si within the a-SiC:H matrix with average size of 4.5 nm. With increase of Pr the isolated nc-Si grains coalesce more and more giving rise to larger size connected nc-Si islands which appear as microcrystalline silicon in the Raman spectra. As a result net isolated nc-Si volume fraction decreases while the total crystalline silicon volume fraction increases.

  4. Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide

    NASA Astrophysics Data System (ADS)

    Inaba, Masahiro; Todoroki, Soichiro; Nakada, Kazuyoshi; Miyajima, Shinsuke

    2016-04-01

    We investigated the effects of annealing on the temperature-dependent minority carrier lifetime of a crystalline silicon wafer passivated by hydrogenated amorphous silicon oxide. The annealing significantly affects the lifetime and its temperature dependence. Our device simulations clearly indicate that valence band offset significantly affects the temperature dependence. We also found a slight increase in the interface defect density after annealing.

  5. Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques

    NASA Astrophysics Data System (ADS)

    Brüggemann, R.; Main, C.; Reynolds, S.

    2002-07-01

    We probe near-surface regions in hydrogenated amorphous and microcrystalline silicon by recording the transient photocurrent after application of a green laser pulse with short absorption depth through the glass-substrate/silicon interface. Depending on the spatial defect inhomogeneity close to the illuminated surface the transient photocurrent shows a different decay behaviour under strongly absorbed green light as compared with more uniformly absorbed red illumination. We apply a Fourier transform technique to the photocurrent decay, which reveals spatial inhomogeneities in the deep-defect density in amorphous silicon. For a highly crystalline sample of microcrystalline silicon we find depth homogeneity in the electronic properties, in agreement with information from structural investigations.

  6. Accuracy and long-term stability of amorphous-silicon measurements

    NASA Technical Reports Server (NTRS)

    Mueller, R.

    1986-01-01

    The measurement system requirements to obtain accurate electrical performance measurements of amorphous silicon cells and modules were described. The progress achieved in modifying the Jet Propulsion Laboratory (JPL) system toward that objective were reviewed.

  7. Optical losses in amorphous silicon solar cells due to back reflectors

    SciTech Connect

    Sopori, B.L.; Madjdpour, J.; Von Roedern, B.; Chen, W.; Hegedus, S.S.

    1997-07-01

    The authors have used a new numerical model and here present initial results on how texturing and backreflectors affect the maximum achievable short-circuit current densities in amorphous silicon solar cells.

  8. RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

    DOEpatents

    Jeffery, F.R.; Shanks, H.R.

    1980-08-26

    A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  9. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOEpatents

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  10. A fax-machine amorphous silicon sensor for X-ray detection

    NASA Astrophysics Data System (ADS)

    Alberdi, J.; Barcala, J. M.; Chvatchkine, V.; Ioudine, I.; Molinero, A.; Navarrete, J. J.; Yuste, C.

    Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition.

  11. Atomistic models of hydrogenated amorphous silicon nitride from first principles

    NASA Astrophysics Data System (ADS)

    Jarolimek, K.; de Groot, R. A.; de Wijs, G. A.; Zeman, M.

    2010-11-01

    We present a theoretical study of hydrogenated amorphous silicon nitride (a-SiNx:H) , with equal concentrations of Si and N atoms (x=1) , for two considerably different densities (2.0 and 3.0g/cm3 ). Densities and hydrogen concentration were chosen according to experimental data. Using first-principles molecular-dynamics within density-functional theory the models were generated by cooling from the liquid. Where both models have a short-range order resembling that of crystalline Si3N4 because of their different densities and hydrogen concentrations they show marked differences at longer length scales. The low-density nitride forms a percolating network of voids with the internal surfaces passivated by hydrogen. Although some voids are still present for the high-density nitride, this material has a much denser and uniform space filling. The structure factors reveal some tendency for the nonstoichiometric high-density nitride to phase separate into nitrogen rich and poor areas. For our slowest cooling rate (0.023 K/fs) we obtain models with a modest number of defect states, where the low (high) density nitride favors undercoordinated (overcoordinated) defects. Analysis of the structural defects and electronic density of states shows that there is no direct one-to-one correspondence between the structural defects and states in the gap. There are several structural defects that do not contribute to in-gap states and there are in-gap states that do only have little to no contributions from (atoms in) structural defects. Finally an estimation of the size and cooling rate effects on the amorphous network is reported.

  12. Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

    NASA Astrophysics Data System (ADS)

    Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

    2002-11-01

    In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

  13. Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111)

    NASA Astrophysics Data System (ADS)

    Käshammer, Peter; Borgardt, Nikolai I.; Seibt, Michael; Sinno, Talid

    2016-09-01

    Molecular dynamics based on the empirical Tersoff potential was used to simulate the deposition of amorphous silicon and germanium on silicon(111) at various deposition rates and temperatures. The resulting films were analyzed quantitatively by comparing one-dimensional atomic density profiles to experimental measurements. It is found that the simulations are able to capture well the structural features of the deposited films, which exhibit a gradual loss of crystalline order over several monolayers. A simple mechanistic model is used to demonstrate that the simulation temperature may be used to effectively accelerate the surface relaxation processes during deposition, leading to films that are consistent with experimental samples grown at deposition rates many orders-of-magnitude slower than possible in a molecular dynamics simulation.

  14. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

    SciTech Connect

    Alexandrov, P. A. Demakov, K. D.; Shemardov, S. G.; Kuznetsov, Yu. Yu.

    2013-02-15

    Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90-150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

  15. Progress Developing Hybrid Silicon Quantum Dot/Amorphous Silicon Thin Films for Photovoltaics Application

    NASA Astrophysics Data System (ADS)

    Guan, Tianyuan; Fields, Jeremy; Klafehn, Grant; Kendrick, Chito; Lochner, Robert; Nourbakhsh, Zahra; Lusk, Mark; Stradins, Paul; Taylor, Craig; Collins, Reuben

    2013-03-01

    Quantum confined (QC) nanostructures exhibit novel, size tunable, quantum mechanical phenomena and their use in solar cell architectures may yield significant efficiency gains. We demonstrate QC hybrid silicon nanocrystal(nc-Si:H) - hydrogenated amorphous silicon (a-Si:H) structures, which can potentially serve as photo-stable, thin film silicon, solar cell materials and provide higher open-circuit voltage compared to conventional materials. We deposit a/nc-Si:H films sequentially, where nc-Si:H and a-Si:H are grown layer-by-layer using separate plasma reactors in a common deposition chamber. X-ray diffraction, Raman spectroscopy, and electron microscopy results confirm the nanoparticles are the appropriate size to achieve QC (3-7nm). Photoluminescence spectroscopy reveals the QC. Co-planar electrical probe experiments investigate carrier transport in a/nc-Si:H, which could be limited by defects accompanying plasma interruption in the sequential deposition process. Defect spectroscopies, such as electron paramagnetic resonance and photothermal deflection spectroscopy are used to study this relationship. These studies reveal material quality limitations to be addressed for realizing film silicon materials that harvest QC to enhance PV device performance. Support of the DOE SunShot and NSF MRSEC programs are gratefully acknowledged.

  16. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    NASA Astrophysics Data System (ADS)

    Wan, Yimao; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-01

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiNx) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiNx stack, recombination current density J0 values of 9, 11, 47, and 87 fA/cm2 are obtained on 10 Ω.cm n-type, 0.8 Ω.cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J0 on n-type 10 Ω.cm wafers is further reduced to 2.5 ± 0.5 fA/cm2 when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiNx stack is thermally stable at 400 °C in N2 for 60 min on all four c-Si surfaces. Capacitance-voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiNx stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  17. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect

    Guha, S. )

    1991-12-01

    This report describes research to improve the understanding of amorphous silicon alloys and other relevant non-semiconductor materials for use in high-efficiency, large-area multijunction modules. The research produced an average subcell initial efficiency of 8.8% over a 1-ft{sup 2} area using same-band-gap, dual-junction cells deposited over a ZnO/AlSi back reflector. An initial efficiency of 9.6% was achieved using a ZnO/Ag back reflector over smaller substrates. A sputtering machine will be built to deposit a ZnO/Ag back reflector over a 1-ft{sup 2} area so that a higher efficiency can also be obtained on larger substrates. Calculations have been performed to optimize the grid pattern, bus bars, and cell interconnects on modules. With our present state of technology, we expect a difference of about 6% between the aperture-area and active-area efficiencies of modules. Preliminary experiments show a difference of about 8%. We can now predict the performance of single-junction cells after long-term light exposure at 50{degree}C by exposing cells to short-term intense light at different temperatures. We find that single-junction cells deposited on a ZnO/Ag back reflector show the highest stabilized efficiency when the thickness of the intrinsic layers is about 2000 {angstrom}. 8 refs.

  18. Deployable aerospace PV array based on amorphous silicon alloys

    NASA Technical Reports Server (NTRS)

    Hanak, Joseph J.; Walter, Lee; Dobias, David; Flaisher, Harvey

    1989-01-01

    The development of the first commercial, ultralight, flexible, deployable, PV array for aerospace applications is discussed. It is based on thin-film, amorphous silicon alloy, multijunction, solar cells deposited on a thin metal or polymer by a proprietary, roll-to-roll process. The array generates over 200 W at AM0 and is made of 20 giant cells, each 54 cm x 29 cm (1566 sq cm in area). Each cell is protected with bypass diodes. Fully encapsulated array blanket and the deployment mechanism weigh about 800 and 500 g, respectively. These data yield power per area ratio of over 60 W/sq m specific power of over 250 W/kg (4 kg/kW) for the blanket and 154 W/kg (6.5 kg/kW) for the power system. When stowed, the array is rolled up to a diameter of 7 cm and a length of 1.11 m. It is deployed quickly to its full area of 2.92 m x 1.11 m, for instant power. Potential applications include power for lightweight space vehicles, high altitude balloons, remotely piloted and tethered vehicles. These developments signal the dawning of a new age of lightweight, deployable, low-cost space arrays in the range from tens to tens of thousands of watts for near-term applications and the feasibility of multi-100 kW to MW arrays for future needs.

  19. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

    PubMed

    Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

    2016-06-22

    While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices. PMID:27227369

  20. Si-H bond dynamics in hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( <2.5cm-1 linewidth) of the 0→1 and 1→2 vibrational transitions within the extensively inhomogeneously broadened ( 78cm-1 linewidth) Si-H vibrational band. There is no spectral diffusion evident in correlation spectra obtained at 0.2, 1, and 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  1. Carrier transport in amorphous silicon utilizing picosecond photoconductivity

    NASA Astrophysics Data System (ADS)

    Johnson, A. M.

    1981-08-01

    The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.

  2. Electrical characterization of hydrogenated amorphous silicon oxide films

    NASA Astrophysics Data System (ADS)

    Itoh, Takashi; Katayama, Ryuichi; Yamakawa, Koki; Matsui, Kento; Saito, Masaru; Sugiyama, Shuhichiroh; Sichanugrist, Porponth; Nonomura, Shuichi; Konagai, Makoto

    2015-08-01

    The electrical characterization of hydrogenated amorphous silicon oxide (a-SiOx:H) films was performed by electron spin resonance (ESR) and electrical conductivity measurements. In the ESR spectra of the a-SiOx:H films, two ESR peaks with g-values of 2.005 and 2.013 were observed. The ESR peak with the g-value of 2.013 was not observed in the ESR spectra of a-Si:H films. The photoconductivity of the a-SiOx:H films decreased with increasing spin density estimated from the ESR peak with the g-value of 2.005. On the other hand, photoconductivity was independent of spin density estimated from the ESR peak with the g-value of 2.013. The optical absorption coefficient spectra of the a-SiOx:H films were also measured. The spin density estimated from the ESR peak with the g-value of 2.005 increased proportionally with increasing optical absorption owing to the gap-state defect.

  3. Characterization of hydrogenated amorphous silicon films obtained from rice husk

    NASA Astrophysics Data System (ADS)

    Nandi, K. C.; Mukherjee, D.; Biswas, A. K.; Acharya, H. N.

    1991-08-01

    Hydrogenated amorphous silicon ( a-Si: H) films were prepared by chemical vapour deposition (CVD) of silanes generated by the acid hydrolysis of magnesium silicide (Mg 2Si) obtained from rice husk. The films were deposited at various substrate temperatures ( Ts) ranging from 430 to 520°C. The results show that the films have room temperature (294 K) dark conductivity (σ d) of the order of 10 -8 - 10 -10 (ohm-cm) -1 with single activation energy (Δ Ed) and the photoconductivity (σ ph) decreases with increase of Ts. Optical band gap ( Eopt) lies between 1.60-1.73 eV and hydrogen content ( CH) in the films is at best 8.3 at %. Au/ a-Si: H junction shows that it acts as a rectifier contact with Schottky barrier height ( VB) 0.69 eV. The films are contaminated by traces of impurities like Na, K, Al, Cl and O as revealed by secondary ion mass spectrometric (SIMS) analysis.

  4. High efficiency neutron sensitive amorphous silicon pixel detectors

    SciTech Connect

    Mireshghi, A.; Cho, G.; Drewery, J.S.; Hong, W.S.; Jing, T.; Lee, H.; Kaplan, S.N.; Perez-Mendez, V.

    1993-11-01

    A multi-layer a-Si:H based thermal neutron detector was designed, fabricated and simulated by Monte Carlo method. The detector consists of two PECVD deposited a-Si:H pin detectors interfaced with coated layers of Gd, as a thermal neutron converter. Simulation results indicate that a detector consisting of 2 Gd films with thicknesses of 2 and 4 {mu}m, sandwiched properly with two layers of sufficiently thick ({approximately}30{mu}m) amorphous silicon diodes, has the optimum parameters. The detectors have an intrinsic efficiency of about 42% at a threshold setting of 7000 electrons, with an expected average signal size of {approximately}12000 electrons which is well above the noise. This efficiency will be further increased to nearly 63%, if we use Gd with 50% enrichment in {sup 157}Gd. We can fabricate position sensitive detectors with spatial resolution of 300 {mu}m with gamma sensitivity of {approximately}1 {times} 10{sup {minus}5}. These detectors are highly radiation resistant and are good candidates for use in various application, where high efficiency, high resolution, gamma insensitive position sensitive neutron detectors are needed.

  5. Hot wire deposited hydrogenated amorphous silicon solar cells

    SciTech Connect

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S.

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  6. Power change in amorphous silicon technology by low temperature annealing

    NASA Astrophysics Data System (ADS)

    Mittal, Ankit; Rennhofer, Marcus; Dangel, Angelika; Duman, Bogdan; Schlosser, Victor

    2015-07-01

    Amorphous silicon (a-Si) is one of the best established thin-film solar-cell technologies. Despite its long history of research, it still has many critical issues because of its defect rich material and its susceptibility to degrade under light also called as Staebler-Wronski effect (SWE). This leads to an increase in the defect density of a-Si, but as a metastable effect it can be completely healed at temperatures above 170 °C. Our study is focused on investigating the behavior of annealing of different a-Si modules under low temperature conditions below 80 °C indicated by successive change of module power. These conditions reflect the environmental temperature impact of the modules in the field, or integrated in buildings as well. The power changes were followed by STC power rating and investigation of module-power evolution under low irradiance conditions at 50 W/m2. Our samples were recovered close to their initial state of power, reaching as high as 99% from its degraded value. This shows the influence of low temperature annealing and light on metastable module behavior in a-Si thin-film modules.

  7. Optical position detectors based on thin film amorphous silicon

    NASA Astrophysics Data System (ADS)

    Henry, Jasmine; Livingstone, John

    2001-10-01

    Thin film optical position sensitive detectors (PSDs) based on novel hydrogenated amorphous silicon Schottky barrier (SB) structures are compared in this work. The three structures reported here have been tested under different light sources to measure their linear properties and wavelength response characteristics. The sputtered a-Si sensors were configured as layered structures of platinum, a-Si and indium tin oxide, forming SB-i-n devices and exhibited linear properties similar to multi-layer a-Si p-i- n devices produced by complex chemical vapor deposition procedures, which involve flammable and toxic gases. All structures were test4ed as possible configurations for 2D sensors. The devices were tested under white light, filtered white light and also a red diode laser. Each of the three structures responded quite differently to each of the sources. Results, based on the correlation coefficient, which measures the linearity of output and which has a maximum value of 1, produced r values ranging between 0.992 to 0.999, in the best performances.

  8. Temperature dependent deformation mechanisms in pure amorphous silicon

    SciTech Connect

    Kiran, M. S. R. N. Haberl, B.; Williams, J. S.; Bradby, J. E.

    2014-03-21

    High temperature nanoindentation has been performed on pure ion-implanted amorphous silicon (unrelaxed a-Si) and structurally relaxed a-Si to investigate the temperature dependence of mechanical deformation, including pressure-induced phase transformations. Along with the indentation load-depth curves, ex situ measurements such as Raman micro-spectroscopy and cross-sectional transmission electron microscopy analysis on the residual indents reveal the mode of deformation under the indenter. While unrelaxed a-Si deforms entirely via plastic flow up to 200 °C, a clear transition in the mode of deformation is observed in relaxed a-Si with increasing temperature. Up to 100 °C, pressure-induced phase transformation and the observation of either crystalline (r8/bc8) end phases or pressure-induced a-Si occurs in relaxed a-Si. However, with further increase of temperature, plastic flow rather than phase transformation is the dominant mode of deformation. It is believed that the elevated temperature and pressure together induce bond softening and “defect” formation in structurally relaxed a-Si, leading to the inhibition of phase transformation due to pressure-releasing plastic flow under the indenter.

  9. Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Rauh, R. D.

    1980-07-01

    Plating experiments with SiHCl3 solutions in propylene carbonate with 0.1 M tetrabutylammonium tetrafluoroborate are described. Silicon was deposited on ITO glass (Nesatron) as well as Mo substrates at temperatures from 25-80 C. Both potentiostatic and galvanostatic conditions were used. The high resistance of the films limited the thickness which could be deposited by either method to less than 5 micrometers. Deposition beyond this limit resulted in a deterioration of the film quality. X-ray analysis of the films confirmed that they were amorphous. SEM analysis of the films revealed a very porous structure with nodules about 1 micrometer in diameter. Annealing the deposit at 400 C in an Ar:H2 atmosphere resulted in a slightly smoother surface but the nodules remained. The films deposited on ITO glass had a band gap of about 1.0 eV and an EO4 value of 1.5-2.0 eV. The Auger analysis of the films showed the presence of large amounts of oxygen in the samples that had been exposed to air.

  10. Amorphous silicon cell array powered solar tracking apparatus

    DOEpatents

    Hanak, Joseph J.

    1985-01-01

    An array of an even number of amorphous silicon solar cells are serially connected between first and second terminals of opposite polarity. The terminals are connected to one input terminal of a DC motor whose other input terminal is connected to the mid-cell of the serial array. Vane elements are adjacent the end cells to selectively shadow one or the other of the end cells when the array is oriented from a desired attitude relative to the sun. The shadowing of one cell of a group of cells on one side of the mid-cell reduces the power of that group substantially so that full power from the group of cells on the other side of the mid-cell drives the motor to reorient the array to the desired attitude. The cell groups each have a full power output at the power rating of the motor. When the array is at the desired attitude the power output of the two groups of cells balances due to their opposite polarity so that the motor remains unpowered.

  11. The importance of inhomogeneities in hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Agarwal, Satish

    2014-03-01

    We shall discuss how the heterogeneities present in hydrogenated amorphous silicon (a-Si:H) can be taken into account by considering the long range potential fluctuations (LRPF), arising from them. Using these ideas we try to understand several challenging puzzles, some of them remaining unresolved till now. These range, from why undoped a-Si:H is n-type, to why the light soaking (LS) degrades boron doped a-Si:H films faster than the undoped or the phosphorous doped films, and why hole injection favors larger degradation than electron injection. Also, the failure of reciprocity and the saturation of the number of dangling bonds created by LS at the low value of about 1017 cm-3 can be explained. The improved stability of a-Si:H containing nc-Si has been attributed to the LRPF assisted diffusion of photo carriers to nc-Si and recombination there. These and other similar observations will be taken up. Work supported by CSIR, New Delhi.

  12. Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Keya, Kimitaka; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2015-09-01

    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  13. Laminated Amorphous Silicon Neutron Detector (pre-print)

    SciTech Connect

    Harry McHugh, Howard Branz, Paul Stradins, and Yueqin Xu

    2009-01-29

    An internal R&D project was conducted at the Special Technologies Laboratory (STL) of National Security Technologies, LLC (NSTec), to determine the feasibility of developing a multi-layer boron-10 based thermal neutron detector using the amorphous silicon (AS) technology currently employed in the manufacture of liquid crystal displays. The boron-10 neutron reaction produces an alpha that can be readily detected. A single layer detector, limited to an approximately 2-micron-thick layer of boron, has a theoretical sensitivity of about 3%; hence a thin multi-layer device with high sensitivity can theoretically be manufactured from single layer detectors. Working with National Renewable Energy Laboratory (NREL), an AS PiN diode alpha detector was developed and tested. The PiN diode was deposited on a boron-10 coated substrate. Testing confirmed that the neutron sensitivity was nearly equal to the theoretical value of 3%. However, adhesion problems with the boron-10 coating prevented successful development of a prototype detector. Future efforts will include boron deposition work and development of integrated AS signal processing circuitry.

  14. Hydrogenated amorphous silicon produced by pyrolysis and photolysis of disilane

    SciTech Connect

    Ashida, Y.; Hirose, M.; Isogaya, K.; Kitagawa, N.; Mishima, Y.; Osuka, Y.

    1984-05-01

    A new class of hydrogenated amorphous silicon (a-Si:H) was prepared by the thermal CVD and photo-CVD of disilane. In the low pressure thermal CVD, the horizontal quartz tube heated by resistance heaters was used as a reactor. The growth rate of the thermal CVD a-Si:H films is plotted as a function of reciprocal substrate temperature. As a new alternative approach to prepare high quality CVD films at temperatures below 300/sup 0/C, the direct photochemical decomposition of disilane has been attempted utilizing a low pressure mercury lamp as a UV radiation source. In the case of undoped and phosphorus doped films, the growth rate is independent of the substrate temperature. In contrast to this, for boron doping, the growth rate has an activation energy of 0.64 eV as in the case of the thermal CVD although the growth rate of the photo-CVD is about three times as large as that of the thermal CVD. This implies that the photoCVD process in boron doping is dominated by the thermal reaction catalyzed with diborane. The dark conductivity and photoconductivity before and after light exposure (AM-1, 200 mW/cm/sup 2/) exhibit no change, indicating the absence of the light-soak degradation in photo-CVD films. The valency control in thermal CVD and photo-CVD is also successfully carried out.

  15. Effect of argon ion bombardment on amorphous silicon carbonitride films

    NASA Astrophysics Data System (ADS)

    Batocki, R. G. S.; Mota, R. P.; Honda, R. Y.; Santos, D. C. R.

    2014-04-01

    Amorphous silicon carbonitride (a-SiCN:H) films were synthesized by radiofrequency (RF) Plasma Enhanced Vapor Chemical Deposition (PECVD) using hexamethyldisilazane (HMDSN) as precursor compound. Then, the films were post-treated by Plasma Immersion Ion Implantation (PIII) in argon atmosphere from 15 to 60 min. The hardness of the film enhanced after ion implantation, and the sample treated at 45 min process showed hardness greater than sixfold that of the untreated sample. This result is explained by the crosslinking and densification of the structure. Films were exposed to oxygen plasma for determining of the etching rate. It decreased monotonically from 33 Å/min to 19 Å/min for the range of process time, confirming structural alterations. Hydrophobic character of the a-SiCN:H films were modified immediately after ion bombardment, due to incorporation of polar groups. However, the high wettability of the films acquired by the ion implantation was diminished after aging in air. Therefore, argon PIII made a-SiCN:H films mechanically more resistant and altered their hydrophobic character.

  16. Hydrogenated amorphous silicon thin film anode for proton conducting batteries

    NASA Astrophysics Data System (ADS)

    Meng, Tiejun; Young, Kwo; Beglau, David; Yan, Shuli; Zeng, Peng; Cheng, Mark Ming-Cheng

    2016-01-01

    Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g-1 for the 38th cycle and retained 707 mAh g-1 after 500 cycles. A maximum discharge capacity of 3635 mAh g-1 was obtained at a lower discharge rate, 510 mA g-1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si-H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si-H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g-1.

  17. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect

    Banerjee, A.; Chen, E.; Clough, R.; Glatfelter, T.; Guha, S.; Hammond, G.; Hopson, M.; Jackett, N.; Lycette, M.; Noch, J.; Palmer, T.; Pawlikiewicz, A.; Rosenstein, I.; Ross, R.; Wolf, D.; Xu, X.; Yang, J.; Younan, K.

    1992-04-01

    This report describes the progress made during Phase 1 of research and development program to obtain high-efficiency amorphous silicon alloy multijunction modules. Using a large-area deposition system, double-and triple-junction cells were made on stainless steel substrates of over 1 ft{sup 2} area with Ag and ZnO predeposited back reflector. Modules of over 1 ft{sup 2} were produced with between 9.2% and 9.9 initial aperture-area efficiencies as measured under a USSC Spire solar simulator. Efficiencies as measured under the NREL Spire solar simulator were found to be typically 15% to 18% lower. The causes for this discrepancy are now being investigated. The modules show about 15% degradation after 600 hours of one-sun illumination at 50{degrees}C. To optimize devices for higher stabilized efficiency, a new method was developed by which the performance of single-junction cells after long-term, one-sun exposure at 50{degrees}C can be predicted by exposing cells to short-term intense light at different temperatures. This method is being used to optimize the component cells of the multijunction structure to obtain the highest light-degraded efficiency.

  18. Amorphization and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions

    SciTech Connect

    Newby, Pascal J.; Canut, Bruno; Bluet, Jean-Marie; Lysenko, Vladimir; Gomes, Severine; Isaiev, Mykola; Burbelo, Roman; Chantrenne, Patrice; Frechette, Luc G.

    2013-07-07

    In this article, we demonstrate that the thermal conductivity of nanostructured porous silicon is reduced by amorphization and also that this amorphous phase in porous silicon can be created by swift (high-energy) heavy ion irradiation. Porous silicon samples with 41%-75% porosity are irradiated with 110 MeV uranium ions at six different fluences. Structural characterisation by micro-Raman spectroscopy and SEM imaging show that swift heavy ion irradiation causes the creation of an amorphous phase in porous Si but without suppressing its porous structure. We demonstrate that the amorphization of porous silicon is caused by electronic-regime interactions, which is the first time such an effect is obtained in crystalline silicon with single-ion species. Furthermore, the impact on the thermal conductivity of porous silicon is studied by micro-Raman spectroscopy and scanning thermal microscopy. The creation of an amorphous phase in porous silicon leads to a reduction of its thermal conductivity, up to a factor of 3 compared to the non-irradiated sample. Therefore, this technique could be used to enhance the thermal insulation properties of porous Si. Finally, we show that this treatment can be combined with pre-oxidation at 300 Degree-Sign C, which is known to lower the thermal conductivity of porous Si, in order to obtain an even greater reduction.

  19. Evaluation of an a-Si EPID in direct detection configuration as a water-equivalent dosimeter for transit dosimetry

    SciTech Connect

    Sabet, Mahsheed; Menk, Frederick W.; Greer, Peter B.

    2010-04-15

    Purpose: A major problem associated with amorphous silicon (a-Si) electronic portal imaging devices (EPIDs) for transit dosimetry is the presence of a phosphor layer, which can introduce large deviations from water-equivalent behavior due to energy-dependent response and visible light scattering. In this study, an amorphous silicon EPID was modified to a direct detection configuration by removing the phosphor layer, and the accuracy of using it for transit dosimetry measurements was investigated for 6 and 18 MV treatment beams by comparison to ion-chamber in water measurements. Methods: Solid water and copper were both evaluated as buildup materials. Using the optimum buildup thickness in each case, effects of changes in radiation field size, source to detector distance, and patient/phantom thickness were investigated by comparison to reference measurements made by an ionization chamber on the central axis. The off-axis response of the imager was also investigated by comparison of EPID image profiles to dose profiles obtained by a scanning ionization chamber in a water tank with various thicknesses of slab phantoms, and an anthropomorphic phantom in the beam using Gamma evaluation (3%, 3 mm criteria). The imaging characteristics of the direct EPID were investigated by comparison to a commercial EPID using QC3V phantom, and by taking images of an anthropomorphic pelvic phantom containing fiducial gold markers. Results: Either 30 mm of solid water or 3.3 mm of copper were found to be the most suitable buildup thicknesses with solid water providing more accurate results. Using solid water buildup, the EPID response compared to the reference dosimeter within 2% for all conditions except phantom thicknesses larger than 25 cm in 6 MV beams, which was up to 6.5%. Gamma evaluation results comparing EPID profiles and reference ionization chamber profiles showed that for 6 and 18 MV beams, at least 91.8% and 90.9% of points had a Gamma<1 for all phantoms, respectively. But

  20. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  1. New results on the microstructure of amorphous silicon as observed by internal friction

    SciTech Connect

    Crandall, R.S.; Mahan, A.H.; Iwaniczko, E.; Jones, K.M.; Liu, X.; White, B.E. Jr.; Pohl, R.O.

    1997-07-01

    The authors have measured the low temperature internal friction (Q{sup {minus}1}) of amorphous silicon (a-Si) films. Electron-beam evaporation leads to the well-known temperature-independent Q{sub 0}{sup {minus}1} plateau common to all amorphous solids. For hydrogenated amorphous silicon (a-Si:H) with about 1 at.% H produced by hot wire chemical vapor deposition, however, the value of Q{sub 0}{sup {minus}1} is over two hundred times smaller than for e-beam a-Si. This is the first observation of an amorphous solid without any significant low energy excitations. This finding offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature.

  2. Experimental investigation of the amorphous silicon melting temperature by fast heating processes

    SciTech Connect

    Baeri, P.; Campisano, S.U.; Grimaldi, M.G.; Rimini, E.

    1982-12-01

    The recrystallization of amorphous Si layers on Si crystal substrates after laser irradiation was investigated to test previous experimental evidence that both the melting point and the melting enthalpy of the amorphous are lower than the corresponding crystalline values. The irradiation was performed in some cases from the back side of 100-..mu..m-thick Si wafers to obtain a temperature distribution in the amorphous layer with a small spatial gradient. In the case of front irradiation the threshold energy density was measured as a function of the amorphous layer thickness, for the polycrystalline formation, crystallization with residual disorder, and good annealing, respectively. The experimental data agree quite well with heat flow calculations assuming a reduction of about 30% in the melting point and enthalpy of amorphous silicon with respect to crystalline silicon.

  3. Stabilization of amorphous structure in silicon thin film by adding germanium

    SciTech Connect

    Makino, Nobuaki; Shigeta, Yukichi

    2015-06-21

    The stabilization of the amorphous structure in amorphous silicon film by adding Ge atoms was studied using Raman spectroscopy. Amorphous Si{sub 1−x}Ge{sub x} (x = 0.0, 0.03, 0.14, and 0.27) films were deposited on glass substrates from electron beam evaporation sources and annealed in N{sub 2} atmosphere. The change in the amorphous states and the phase transition from amorphous to crystalline were characterized using the TO, LO, and LA phonons in the Raman spectra. The temperature of the transition from the amorphous phase to the crystalline phase was higher for the a-Si{sub 1−x}Ge{sub x} (x = 0.03, 0.14) films, and the crystallization was hindered. The reason why the addition of a suitable quantity of Ge atoms into the three-dimensional amorphous silicon network stabilizes its amorphous structure is discussed based on the changes in the Raman signals of the TO, LO, and LA phonons during annealing. The characteristic bond length of the Ge atoms allows them to stabilize the random network of the amorphous Si composed of quasi-tetrahedral Si units, and obstruct its rearrangement.

  4. Growth and defect chemistry of amorphous hydrogenated silicon

    NASA Astrophysics Data System (ADS)

    Scott, Bruce A.; Reimer, Jeffrey A.; Longeway, Paul A.

    1983-12-01

    Magnetic resonance (NMR,EPR) and infrared studies are presented of amorphous hydrogenated silicon (a-Si:H) films prepared by homogeneous chemical vapor deposition (HOMOCVD) and rf plasma decomposition using silane and disilane. Hydrogen incorporation occurs with a small activation energy (˜0.06 eV) for all films, while the barrier for changes in spin defect density is almost an order of magnitude larger and comparable to that measured in defect annealing studies. Films deposited by rf(Si2H6) plasma exhibit the greatest hydrogen contents, followed by HOMOCVD and rf(SiH4) plasma material. NMR measurements suggest that HOMOCVD films are less disordered than plasma-deposited a-Si:H. Previous work and recent kinetic studies of plasma and thermal environments are extensively analyzed, along with thermodynamic and kinetic data, to determine a a-Si:H growth mechanisms most consistent with the experimental results. The model presented to explain compositional and defect changes with substrate temperature emphasizes plasma deposition by monoradical precursors and HOMOCVD growth by diradicals, resulting initially in a similar surface-bound intermediate in all cases. Plasma growth from Si2H6 involves the surface attachment of longer radical chains, compared to SiH4, while oligomeric diradicals could be present in HOMOCVD. The possibility that reactions at the hot reactor wall, as well as in the gas, create monoradicals in HOMOCVD is also explored in detail. Finally, film dehydrogenation and crosslinking reactions are examined, and experiments proposed to determine the channels most relevant for each deposition environment.

  5. Dynamics of hydrogenated amorphous silicon flexural resonators for enhanced performance

    NASA Astrophysics Data System (ADS)

    Mouro, J.; Chu, V.; Conde, J. P.

    2016-04-01

    Hydrogenated amorphous silicon thin-film flexural resonators with sub-micron actuation gaps are fabricated by surface micromachining on glass substrates. Experimentally, the resonators are electrostatically actuated and their motion is optically detected. Three different configurations for the electrostatic excitation force are used to study the dynamics of the resonators. In the first case, a dc voltage (Vdc) is added to an ac voltage with variable excitation frequency (Vac(ω)) and harmonic, superharmonic, and subharmonic resonances of different orders are observed. The second case consists on mixing the dc voltage (Vdc) with an ac voltage applied at a fixed frequency of twice the natural frequency of the resonator (V(2ω0)). High-amplitude parametric resonance is excited at the natural frequency of the system, ω0. This configuration allows a separation between the frequencies of the excitation and the mechanical motion. Finally, in the third case, the dc voltage (Vdc) is combined with both ac voltages, Vac(ω) and V(2ω0), and parametric resonance is excited and emerges from the fundamental harmonic resonance peak. The single-degree-of-freedom equation of motion is modeled and discussed for each case. The nonlinearity inherent to the electrostatic force is responsible for modulating the spring constant of the system at different frequencies, giving rise to parametric resonance. These equations of motion are simulated in the time and frequency domains, providing a consistent explanation of the experimentally observed phenomena. A wide variety of possible resonance modes with different characteristics can be used advantageously in MEMS device design.

  6. Properties of hydrogenated amorphous silicon prepared by chemical vapor deposition

    SciTech Connect

    Ellis, F.B. Jr.; Gordon, R.G.; Paul, W.; Yacobi, B.G.

    1984-06-15

    Hydrogenated amorphous silicon (a-Si:H) films were prepared by chemical vapor deposition (CVD) from mixtures of silane, disilane, trisilane, and higher polysilanes in hydrogen carrier gas at 1 atm total pressure, at substrate temperatures from 420--530 /sup 0/C. Experimental parameters are explained and properties as a function of these parameters are shown. The measurements include hydrogen content (by IR), optical, electrical, and photovoltaic properties of the material. In most respects, the CVD material closely resembles the a-Si:H usually prepared by glow discharge. The following differences have been noted: (1) the CVD a-Si:H shows no IR absorption at 840--850 cm/sup -1/, which is consistent with the expected better thermal stability of the CVD material because of the much higher substrate temperatures in the CVD process than in the glow discharge process. (2) The band gap of CVD a-Si:H is lower by about 0.1 eV than glow discharge a-Si:H of the same hydrogen content. Thus, the band gap of CVD a-Si:H is better matched to the solar spectrum than is glow discharge a-Si:H. (3) All three IR absorption bands due to hydrogen are about 20% narrower in the CVD a-Si:H, suggesting a simpler structure. (4) The temperature dependence of the dark conductivity of CVD a-Si:H fits a curve for a single activation energy, in contrast to the more complicated temperature dependence often found in glow discharge a-Si:H, in which two different activation energies are seen at high and low temperatures. This suggests that the conduction mechanism is also simpler in the CVD a-Si:H.

  7. Fiber Optic Excitation of Silicon Microspheres in Amorphous and Crystalline Fluids

    NASA Astrophysics Data System (ADS)

    Yılmaz, Huzeyfe; Yılmaz, Hasan; Sharif Murib, Mohammed; Serpengüzel, Ali

    2016-03-01

    This study investigates the optical resonance spectra of free-standing monolithic single crystal silicon microspheres immersed in various amorphous fluids, such as air, water, ethylene glycol, and 4-Cyano-4'-pentylbiphenyl nematic liquid crystal. For the various amorphous fluids, morphology-dependent resonances with quality factors on the order of 105 are observed at 1428 nm. The mode spacing is always on the order of 0.23 nm. The immersion in various amorphous fluids affects the spectral response of the silicon microsphere and heralds this technique for use in novel optofluidics applications. Even though the nematic liquid crystal is a highly birefringent, scattering, and high-index optical medium, morphology-dependent resonances with quality factors on the order of 105 are observed at 1300 nm in the elastic scattering spectra of the silicon microsphere, realizing a liquid-crystal-on-silicon geometry. The relative refractive index and the size parameter of the silicon microsphere are the parameters that affect the resonance structure. The more 4-Cyano-4'-pentylbiphenyl interacting with the silicon microsphere, the lower the quality factor of the resonances is. The more 4-Cyano-4'-pentylbiphenyl is interacting with the silicon microsphere, the lower the mode spacing Δλ of the resonances is. The silicon microspheres wetted with nematic liquid crystal can be used for optically addressed liquid-crystal-on-silicon displays, light valve applications, or reconfigurable optical networks.

  8. Amorphous-silicon module hot-spot testing

    NASA Technical Reports Server (NTRS)

    Gonzalez, C. C.

    1985-01-01

    Hot spot heating occurs when cell short-circuit current is lower than string operating current. Amorphous cell hot spot are tested to develop the techniques required for performing reverse bias testing of amorphous cells. Also, to quantify the response of amorphous cells to reverse biasing. Guidelines are developed from testing for reducing hot spot susceptibility of amorphous modules and to develop a qualification test for hot spot testing of amorphous modules. It is concluded that amorphous cells undergo hot spot heating similarly to crystalline cells. Comparison of results obtained with submodules versus actual modules indicate heating levels lower in actual modules. Module design must address hot spot testing and hot spot qualification test conducted on modules showed no instabilities and minor cell erosion.

  9. Formation of amorphous silicon by light ion damage

    SciTech Connect

    Shih, Y.C.

    1985-12-01

    Amorphization by implantation of boron ions (which is the lightest element generally used in I.C. fabrication processes) has been systematically studied for various temperatures, various voltages and various dose rates. Based on theoretical considerations and experimental results, a new amorphization model for light and intermediate mass ion damage is proposed consisting of two stages. The role of interstitial type point defects or clusters in amorphization is emphasized. Due to the higher mobility of interstitials out-diffusion to the surface particularly during amorphization with low energy can be significant. From a review of the idealized amorphous structure, diinterstitial-divacancy pairs are suggested to be the embryos of amorphous zones formed during room temperature implantation. The stacking fault loops found in specimens implanted with boron at room temperature are considered to be the origin of secondary defects formed during annealing.

  10. Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

    NASA Technical Reports Server (NTRS)

    Zhu, M. F.; Suni, I.; Nicolet, M.-A.; Sands, T.

    1984-01-01

    Wiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.

  11. Laser nucleated grain growth in hydrogenated amorphous silicon films

    NASA Astrophysics Data System (ADS)

    Dabney, Matthew S.

    annealed directly from the as grown state. The trends in EBSD grain size with in situ XRD crystallization time tc are consistent with theoretical predictions obtained from the classical model of nucleation and grain growth. An optical method was developed as a new and simple method to investigate crystallite nucleation and growth in stepwise, thermally annealed PECVD and HWCVD a-Si:H films. By confining film thicknesses to the range 500-4000A, optical microscopy in the reflection mode was used to readily detect crystallites in the thermally annealed a-Si:H lattice. Measurements of the crystallite density versus annealing time for identically prepared films of different thicknesses demonstrated crystallite nucleation rates smaller for thinner films, suggesting homogeneous nucleation, in agreement with previous results. The effect of film stress on crystallite nucleation was investigated in 0.11microm thick, thermally annealed hydrogenated amorphous silicon films. The nucleation rate was significantly suppressed around scratches, cleaved film edges, and laser ablated areas, extending laterally as much as 100-150um from these regions where the film connectivity was disrupted. u-Raman measurements of the transverse optical mode of Si demonstrated an accompanying reduction in tensile stress in the regions where nucleation was suppressed. The first measurements of nucleation rate in stress and in stress relieved areas in the same film are presented.

  12. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    SciTech Connect

    Wan, Yimao Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  13. Status and future of government-supported amorphous silicon research in the United States

    SciTech Connect

    Wallace, W L; Sabisky, E S

    1986-06-01

    The Amorphous Silicon Research Project (ASRP) was established at the Solar Energy Research Institute in 1983 and is responsible for all US Department of Energy government supported research activities in the field of amorphous silicon photovoltaics. The objectives and research directions of the project have been established by a Five-Year Research Plan, which was developed at SERI in cooperation with the Department of Energy in 1984 and is divided into research on single-junction and multi-junction solar cells. DOE/SERI has recently initiated a new three year program to be performed in collaboration with US industry to perform work on high efficiency amorphous silicon solar cells and submodules. The objectives of this initiative are: (i) to achieve 18% efficiencies for small area multi-junction amorphous silicon cells, and (ii) to achieve amorphous silicon submodule efficiencies in the 10 to 13% range for single-junction and multi-junction submodule configurations over areas of at least 1000 cm/sup 2/.

  14. Pressure-induced transformations in amorphous silicon: A computational study

    SciTech Connect

    Garcez, K. M. S.; Antonelli, A.

    2014-02-14

    We study the transformations between amorphous phases of Si through molecular simulations using the environment dependent interatomic potential (EDIP) for Si. Our results show that upon pressure, the material undergoes a transformation from the low density amorphous (LDA) Si to the high density amorphous (HDA) Si. This transformation can be reversed by decompressing the material. This process, however, exhibits clear hysteresis, suggesting that the transformation LDA ↔ HDA is first-order like. The HDA phase is predominantly five-fold coordinated, whereas the LDA phase is the normal tetrahedrally bonded amorphous Si. The HDA phase at 400 K and 20 GPa was submitted to an isobaric annealing up to 800 K, resulting in a denser amorphous phase, which is structurally distinct from the HDA phase. Our results also show that the atomic volume and structure of this new amorphous phase are identical to those of the glass obtained by an isobaric quenching of the liquid in equilibrium at 2000 K and 20 GPa down to 400 K. The similarities between our results and those for amorphous ices suggest that this new phase is the very high density amorphous Si.

  15. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    SciTech Connect

    Fortmann, C.M.; Hegedus, S.S. )

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  16. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    NASA Astrophysics Data System (ADS)

    Fortmann, C. M.; Hegedus, S. S.

    1992-12-01

    Results and conclusions obtained during the investigation of amorphous silicon, amorphous silicon based alloy materials, and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-Si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  17. Performance and modeling of amorphous silicon photovoltaics for building-integrated applications

    SciTech Connect

    Kroposki, B.; Hansen, R.

    1999-07-01

    Amorphous silicon photovoltaic (PV) modules offer several advantages for building-integrated applications. The material can be deposited on glass or flexible substrates, which allows for products like roofing shingles and integrated PV/building glass. The material also has a uniform surface, which is ideal for many architectural applications. Amorphous silicon modules perform well in warm weather and have a small temperature coefficient for power. Depending on the building load, this may be beneficial when compared to crystalline systems. At the National Renewable Energy Laboratory, the authors are monitoring the performance of a triple-junction a-Si system. The system consists of 72 roofing shingles mounted directly to simulated roofing structures. This paper examines the performance of the building-integrated amorphous silicon PV system and applicability for covering residential loads. A simple model of system performance is also developed and is presented.

  18. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

    PubMed

    Marrs, Michael A; Raupp, Gregory B

    2016-01-01

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

  19. Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires

    NASA Astrophysics Data System (ADS)

    Yu, Linwei; O'Donnell, Benedict; Foldyna, Martin; Cabarrocas, Pere Roca i.

    2012-05-01

    Constructing radial junction hydrogenated amorphous silicon (a-Si:H) solar cells on top of silicon nanowires (SiNWs) represents a promising approach towards high performance and cost-effective thin film photovoltaics. We here develop an all-in situ strategy to grow SiNWs, via a vapour-liquid-solid (VLS) mechanism on top of ZnO-coated glass substrate, in a plasma-enhanced chemical vapour deposition (PECVD) reactor. Controlling the distribution of indium catalyst drops allows us to tailor the as-grown SiNW arrays into suitable size and density, which in turn results in both a sufficient light trapping effect and a suitable arrangement allowing for conformal coverage of SiNWs by subsequent a-Si:H layers. We then demonstrate the fabrication of radial junction solar cells and carry on a parametric study designed to shed light on the absorption and quantum efficiency response, as functions of the intrinsic a-Si:H layer thickness and the density of SiNWs. These results lay a solid foundation for future structural optimization and performance ramp-up of the radial junction thin film a-Si:H photovoltaics.

  20. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

    PubMed

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto

    2014-01-01

    We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching. PMID:24521208

  1. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

    PubMed Central

    2014-01-01

    We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching. PMID:24521208

  2. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

    NASA Astrophysics Data System (ADS)

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto

    2014-02-01

    We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

  3. Origin of the photo-induced changes in hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Adler, D.

    1983-07-01

    The electronic properties of hydrogenated amorphous silicon films are discussed in detail. Particular attention is paid to the changes induced by photogeneration of excess free carriers. Previous models which have been proposed to account for such effects are classified and criticized. An alternative explanation, which is based on the unique electronic structure of hydrogenated amorphous silicon, is proposed and analyzed. In this model, no new defects are created by the light, but rather the photo-induced effects follow from a metastable trapping of the excess free carriers at charged spinless defects which are present at equilibrium.

  4. On electronic structure of polymer-derived amorphous silicon carbide ceramics

    NASA Astrophysics Data System (ADS)

    Wang, Kewei; Li, Xuqin; Ma, Baisheng; Wang, Yiguang; Zhang, Ligong; An, Linan

    2014-06-01

    The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

  5. Experimental determination of the distribution of tail states of hydrogenated amorphous silicon: A transient photocurrent analysis

    SciTech Connect

    Webb, D.P.; Chan, F.Y.M.; Zou, X.C.; Chan, Y.C.; Lam, Y.W.; Lin, S.H.; O'Leary, S.K.; Lim, P.K.

    1997-07-01

    Recent experimental developments have cast doubt on the validity of the common assumption that the distribution of tail states of hydrogenated amorphous silicon exhibits a single exponential functional form. The authors employ transient photocurrent decay measurements to determine this distribution of tail states. In their approach, however, they determine the distribution of tail states directly from the experimental data, without assuming, a priori, a specific functional form. It is found that these experimental results are consistent with other more recent experimental determinations of the distribution of tail states, suggesting the possibility of deviations from a single exponential distribution of tail states in hydrogenated amorphous silicon.

  6. Hydrogenated amorphous silicon radiation detectors: Material parameters, radiation hardness, charge collection

    SciTech Connect

    Qureshi, S.

    1991-01-01

    For nearly two decades now hydrogenated amorphous silicon has generated considerable interest for its potential use in various device applications namely, solar cells, electrolithography, large-area electronics etc. The development of efficient and economic solar cells has been on the forefront of this research. This interest in hydrogenated amorphous silicon has been motivated by the fact that amorphous silicon can be deposited over a large area at relatively low cost compared to crystalline silicon. Hydrogenated amorphous silicon, frequently abbreviated as a-Si:H, used in solar-cell applications is a micron or less thick. The basic device structure is a p-i-n diode where the i layer is the active layer for radiation to interact. This is so because intrinsic a-Si:H has superior electrical properties in comparison to doped a-Si:H which serves the purpose of forming a potential barrier on either end of the i layer. The research presented in this dissertation was undertaken to study the properties of a-Si:H for radiation detection applications in physics and medicine.

  7. Amorphization and nanocrystallization of silicon under laser shock compression: bridging experiment with atomic simulation

    NASA Astrophysics Data System (ADS)

    Zhao, Shiteng; Kad, Bimal; Hahn, Eric; Remington, Bruce; Wehrenberg, Christopher; Bringa, Eduardo; Huntington, Channing; Park, Hye-Sook; More, Karren; Meyers, Marc

    Terawatt, nanosecond-duration, laser-driven, shock compression and recovery experiments on [001] silicon unveiled remarkable structural changes above a pressure threshold. Two distinct amorphous regions were identified: (a) a bulk amorphous layer close to the surface and (b) amorphous bands initially aligned with {111}slip planes. Further increase of the laser energy leads to the re-crystallization of amorphous silicon into nanocrystals with high concentration of nano-twins. Shock-induced defects play a very important role in the onset of amorphization. Calculations of the free energy changes with pressure and shear, using the Patel-Cohen methodology, are in agreement with the experimental results. Molecular dynamics simulation corroborates the amorphization, showing that it is initiated by the nucleation and propagation of partial dislocations. The nucleation of amorphization is analyzed by classical nucleation theory. This research is funded by a UC Research Laboratories Grant (09-LR-06-118456-MEYM) and a National Laser Users Facility (NLUF) Grant (PE-FG52-09NA-29043).

  8. Graphene as a transparent electrode for amorphous silicon-based solar cells

    SciTech Connect

    Vaianella, F. Rosolen, G.; Maes, B.

    2015-06-28

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  9. Crystal-amorphous-silicon interface kinetics under ion beam irradiation

    NASA Astrophysics Data System (ADS)

    Priolo, F.; La Ferla, A.; Spinella, C.; Rimini, E.; Campisano, S. U.; Ferla, G.

    1990-01-01

    Our recent work on ion-beam-assisted epitaxial growth of amorphous Si layers on single crystal substrates is reviewed. The crystallization was induced by a 600 keV Kr2+ beam at a dose rate of 1×1012/cm2 · s. During irradiations the samples were mounted on a resistively heated copper block whose temperature was maintained constant in the range 250-450°C. The planar motion of the crystal-amorphous interface was monitored in situ by dynamic reflectivity measurements. This technique allows the ion-induced growth rate to be measured with a very high precision. We have observed that this growth rate scales linearly with the energy deposited into elastic collisions at the crystal-amorphous interface by the impinging ions. Moreover, the rate shows an Arrhenius temperature dependence with a well defined activation energy of 0.32±0.05 eV. The dependence of this process on substrate orientation and on impurities either dissolved in the amorphous layer or present at very high concentration at the crystal-amorphous interface is also discussed.

  10. Crystal-amorphous-silicon interface kinetics under ion beam irradiation

    NASA Astrophysics Data System (ADS)

    Priolo, F.; La Ferla, A.; Spinella, C.; Rimini, E.; Campisano, S. U.; Ferla, G.

    1989-11-01

    Our recent work on ion-beam-assisted epitaxial growth of amorphous Si layers on single crystal substrates is reviewed. The crystallization was induced by a 600 keV Kr 2+ beam at a dose rate of 1×10 12/cm 2 · s. During irradiations the samples were mounted on a resistively heated copper block whose temperature was maintained constant in the range 250-450°C. The planar motion of the crystal-amorphous interface was monitored in situ by dynamic reflectivity measurements. This technique allows the ion-induced growth rate to be measured with a very high precision. We have observed that this growth rate scales linearly with the energy deposited into elastic collisions at the crystal-amorphous interface by the impinging ions. Moreover, the rate shows an Arrhenius temperature dependence with a well defined activation energy of 0.32±0.05 eV. The dependence of this process on substrate orientation and on impurities either dissolved in the amorphous layer or present at very high concentration at the crystal-amorphous interface is also discussed.

  11. Crystalline-amorphous silicon nano-composites: Nano-pores and nano-inclusions impact on the thermal conductivity

    NASA Astrophysics Data System (ADS)

    Verdier, M.; Termentzidis, K.; Lacroix, D.

    2016-05-01

    The thermal conductivities of nanoporous and nanocomposite silicon with incorporated amorphous phases have been computed by molecular dynamics simulations. A systematic investigation of the porosity and the width of the amorphous shell contouring a spherical pore has been made. The impact of amorphous phase nanoinclusions in a crystalline matrix has also been studied with the same amorphous fraction as the porosity of nanoporous silicon to achieve comparison. The key parameter for all configurations with or without the amorphous phase is proved to be the interface (between the crystalline and amorphous phases or crystalline and void) to volume ratio. We obtain the sub-amorphous thermal conductivity for several configurations by combining pores, amorphous shell, and crystalline phase. These configurations are promising candidates for low cost and not toxic thermoelectric devices based on abundant semiconductors.

  12. Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

    SciTech Connect

    Wen, Xixing; Zeng, Xiangbin Zheng, Wenjun; Liao, Wugang; Feng, Feng

    2015-01-14

    The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiC{sub x}) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiC{sub x}/SiO{sub 2}/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiC{sub x}, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiC{sub x} can promote the application of Si QDs in low-power consumption semiconductor memory devices.

  13. Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

    NASA Astrophysics Data System (ADS)

    Wen, Xixing; Zeng, Xiangbin; Zheng, Wenjun; Liao, Wugang; Feng, Feng

    2015-01-01

    The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiCx) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiCx/SiO2/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiCx, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiCx can promote the application of Si QDs in low-power consumption semiconductor memory devices.

  14. Metal induced crystallization of amorphous silicon for photovoltaic solar cells

    NASA Astrophysics Data System (ADS)

    Van Gestel, D.; Gordon, I.; Poortmans, J.

    A silicon thin-film technology could lead to less expensive modules by the use of less silicon material and by the implementation of monolithic module processes. A technology based on polycrystalline-silicon thin-films with a grain size between 1 μm and 1 mm (pc-Si), seems particularly promising since it combines the low-cost potential of a thin-film technology with the high efficiency potential of crystalline silicon. One of the possible approaches to fabricate pc-Si absorber layers is metal induced crystallization (MIC). For solar cell applications mainly aluminium is investigated as metal because 1) it forms a eutectic system with silicon instead of a silicide-metal system like e.g. Ni 2) only shallow level defects are formed in the forbidden bandgap of silicon and 3) a layer exchange process can be obtained in combination with a-Si. Aluminum induced crystallization (AIC) of a-Si on non-silicon substrates can results in grains with a preferential (100) orientation and a maximum grain sizes above 50 micrometer. These layers can act as seed layers for further epitaxial growth. Based on this two-step approach (AIC + epitaxial growth) we made solar cells with an energy conversion efficiency of 8%. Based on TEM, EBIC, SEM, defect etch and EBSD measurements we showed that the efficiency is nowadays mainly limited by the presence of electrical intragrain defects.

  15. Hybrid method of making an amorphous silicon P-I-N semiconductor device

    DOEpatents

    Moustakas, Theodore D.; Morel, Don L.; Abeles, Benjamin

    1983-10-04

    The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

  16. Amorphous silicon research. Annual subcontract report, October 1, 1994--September 30, 1995

    SciTech Connect

    Arya, R R; Bennett, M; Bradley, D

    1996-02-01

    The major effort in this program is to develop cost-effective processes which satisfy efficiency, yield, and material usage criteria for mass production of amorphous silicon-based multijunction modules. New and improved processes were developed for the component cells and a more robust rear contact was developed for better long term stability.

  17. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

    DOEpatents

    Sharp, Kenneth G.; D'Errico, John J.

    1988-01-01

    The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

  18. Elastic constants of defected and amorphous silicon with the environment-dependent interatomic potential

    SciTech Connect

    Allred, Clark L.; Yuan Xianglong; Hobbs, Linn W.; Bazant, Martin Z.

    2004-10-01

    The elastic constants of a wide range of models of defected crystalline and amorphous silicon are calculated, using the environment-dependent interatomic potential (EDIP). The defected crystalline simulation cells contain randomly generated defect distributions. An extensive characterization of point defects is performed, including structure, energy and influence on elastic constants. Three important conclusions are drawn. (1) Defects have independent effects on the elastic constants of silicon up to (at least) a defect concentration of 0.3%. (2) The linear effect of Frenkel pairs on the <110> Young's modulus of silicon is -1653 GPa per defect fraction. (3) 17 different point defect types cause a very similar decrease in the <110> Young's modulus: -(0.28{+-}0.05)% when calculated in isolation using a 1728-atom cell. These principles will be very useful for predicting the effect of radiation damage on the elastic modulus of silicon in the typical case in which point-defect concentrations can be estimated, but the exact distribution and species of defects is unknown. We also study amorphous samples generated in quenching the liquid with EDIP, including an ideal structure of perfect fourfold coordination, samples with threefold and fivefold coordinated defects, one with a nanovoid, and one with an amorphous inclusion in a crystalline matrix. In the last case, a useful finding is that the change in the Young's modulus is simply related to the volume fraction of amorphous material, as has also been observed by experiment.

  19. Size effects on the thermal conductivity of amorphous silicon thin films

    DOE PAGESBeta

    Thomas Edwin Beechem; Braun, Jeffrey L.; Baker, Christopher H.; Elahi, Miraz; Artyushkova, Kateryna; Norris, Pamela M.; Leseman, Zayd Chad; Gaskins, John T.; Hopkins, Patrick E.; Giri, Ashutosh

    2016-04-01

    In this study, we investigate thickness-limited size effects on the thermal conductivity of amorphous silicon thin films ranging from 3 to 1636 nm grown via sputter deposition. While exhibiting a constant value up to ~100 nm, the thermal conductivity increases with film thickness thereafter. The thickness dependence we demonstrate is ascribed to boundary scattering of long wavelength vibrations and an interplay between the energy transfer associated with propagating modes (propagons) and nonpropagating modes (diffusons). A crossover from propagon to diffuson modes is deduced to occur at a frequency of ~1.8 THz via simple analytical arguments. These results provide empirical evidencemore » of size effects on the thermal conductivity of amorphous silicon and systematic experimental insight into the nature of vibrational thermal transport in amorphous solids.« less

  20. Recrystallization of amorphous silicon deposited on ultra thin microcrystalline silicon layers

    SciTech Connect

    Wang, F.; Wolfe, D.; Lucovsky, G.

    1997-07-01

    This study reports on a method to reduce the thermal crystallization time and temperature of amorphous silicon films by initially depositing an ultra thin {micro}c-Si:H seed layer. After rapid thermal annealing (RTA), films were characterized by means of Raman spectroscopy, x-ray diffraction, reflection high energy electron diffraction, atomic force microscopy, and dark and photocurrent. The results show that the microcrystalline particles in the seed layer act as nucleation centers, promoting crystallization of a-Si:H at lower temperatures and at shorter times, compared to a-Si:H films deposited without any seed layer. Additionally, it was found that the seed layer affects the orientation of the crystallized films. The dark current increases abruptly over 4 orders of magnitude in the first 15 second anneal, then decreases as the time increases, and tends to saturate. The photocurrent has an opposite behavior. These transport results can be understood in terms of a change in defect density and band gap shrinkage.

  1. Amorphous Silicon Carbide Passivating Layers to Enable Higher Processing Temperature in Crystalline Silicon Heterojunction Solar Cells

    SciTech Connect

    Boccard, Mathieu; Holman, Zachary

    2015-04-06

    "Very efficient crystalline silicon (c-Si) solar cells have been demonstrated when thin layers of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) are used for passivation and carrier selectivity in a heterojunction device. One limitation of this device structure is the (parasitic) absorption in the front passivation/collection a-Si:H layers; another is the degradation of the a-Si:H-based passivation upon temperature, limiting the post-processes to approximately 200°C thus restricting the contacting possibilities and potential tandem device fabrication. To alleviate these two limitations, we explore the potential of amorphous silicon carbide (a-SiC:H), a widely studied material in use in standard a-Si:H thin-film solar cells, which is known for its wider bandgap, increased hydrogen content and stronger hydrogen bonding compared to a-Si:H. We study the surface passivation of solar-grade textured n-type c-Si wafers for symmetrical stacks of 10-nm-thick intrinsic a-SiC:H with various carbon content followed by either p-doped or n-doped a-Si:H (referred to as i/p or i/n stacks). For both doping types, passivation (assessed through carrier lifetime measurements) is degraded by increasing the carbon content in the intrinsic a-SiC:H layer. Yet, this hierarchy is reversed after annealing at 350°C or more due to drastic passivation improvements upon annealing when an a-SiC:H layer is used. After annealing at 350°C, lifetimes of 0.4 ms and 2.0 ms are reported for i/p and i/n stacks, respectively, when using an intrinsic a-SiC:H layer with approximately 10% of carbon (initial lifetimes of 0.3 ms and 0.1 ms, respectively, corresponding to a 30% and 20-fold increase, respectively). For stacks of pure a-Si:H material the lifetimes degrade from 1.2 ms and 2.0 ms for i/p and i/n stacks, respectively, to less than 0.1 ms and 1.1 ms (12-fold and 2-fold decrease, respectively). For complete solar cells using pure a-Si:H i/p and i/n stacks, the open-circuit voltage (Voc

  2. Direct observations of thermally induced structural changes in amorphous silicon carbide

    SciTech Connect

    Ishimaru, Manabu; Hirata, Akihiko; Naito, Muneyuki; Bae, In-Tae; Zhang, Yanwen; Weber, William J.

    2008-08-01

    Thermally induced structural relaxation in amorphous silicon carbide (SiC) has been examined by means of in situ transmission electron microscopy (TEM). The amorphous SiC was prepared by high-energy ion-beam-irradiation into a single crystalline 4H-SiC substrate. Cross-sectional TEM observations and electron energy-loss spectroscopy measurements revealed that thermal annealing induces a remarkable volume reduction, so-called densification, of amorphous SiC. From radial distribution function analyses using electron diffraction, notable changes associated with structural relaxation were observed in chemical short-range order. On the basis of the alteration of chemical short-range order, we discuss the origin of thermally induced densification in amorphous SiC.

  3. Ultrafast optical control using the Kerr nonlinearity in hydrogenated amorphous silicon microcylindrical resonators

    PubMed Central

    Vukovic, N.; Healy, N.; Suhailin, F. H.; Mehta, P.; Day, T. D.; Badding, J. V.; Peacock, A. C.

    2013-01-01

    Microresonators are ideal systems for probing nonlinear phenomena at low thresholds due to their small mode volumes and high quality (Q) factors. As such, they have found use both for fundamental studies of light-matter interactions as well as for applications in areas ranging from telecommunications to medicine. In particular, semiconductor-based resonators with large Kerr nonlinearities have great potential for high speed, low power all-optical processing. Here we present experiments to characterize the size of the Kerr induced resonance wavelength shifting in a hydrogenated amorphous silicon resonator and demonstrate its potential for ultrafast all-optical modulation and switching. Large wavelength shifts are observed for low pump powers due to the high nonlinearity of the amorphous silicon material and the strong mode confinement in the microcylindrical resonator. The threshold energy for switching is less than a picojoule, representing a significant step towards advantageous low power silicon-based photonic technologies. PMID:24097126

  4. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    DOE PAGESBeta

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devicesmore » with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.« less

  5. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    SciTech Connect

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devices with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.

  6. Amorphous silicon materials and solar cells - Progress and directions

    NASA Astrophysics Data System (ADS)

    Sabisky, E.; Mahan, H.; McMahon, T.

    In 1978, the U.S. Department of Energy initiated government sponsored research in amorphous materials and thin film solar cells. The program was subsequently transferred to the Solar Energy Research Institute for program management. The program grew into a major program for the development of high efficiency (greater than 10 percent), cost effective (15-40 cents per peak watt) thin film amorphous solar cells. The present international interest, the substantial progress made in the device area (2 percent PIN cell in 1976 to 10 percent PIN cell in 1982), and the marketing of the first consumer products using thin film solar cells are to a large ducts using thin film solar cells are to a large extent a consequence of this goal-oriented program.

  7. High Resolution Radial Distribution Function of Pure Amorphous Silicon

    SciTech Connect

    Laaziri, K.; Roorda, S.; Chicoine, M.; Kycia, S.; Robertson, J.L.; Wang, J.; Moss, S.C.

    1999-04-01

    The structure factor S(Q) of high purity amorphous Si membranes prepared by ion implantation was measured over an extended Q range (0.03{endash}55 {Angstrom} {sup {minus}1} ). Calculation of the first neighbor shell coordination (C{sub 1} ) as a function of maximum Q indicates that measurement of S(Q) out to at least 40 {Angstrom}{sup {minus}1} is required to reliably determine the radial distribution function (RDF). A 2{percent} change in C{sub 1} and subtle changes in the rest of the RDF were observed upon annealing, consistent with point defect removal. After annealing at 600thinsp{degree}C, C{sub 1}=3.88 , which would explain why amorphous Si is less dense than crystalline Si. {copyright} {ital 1999} {ital The American Physical Society}

  8. Sub-amorphous thermal conductivity in ultrathin crystalline silicon nanotubes.

    PubMed

    Wingert, Matthew C; Kwon, Soonshin; Hu, Ming; Poulikakos, Dimos; Xiang, Jie; Chen, Renkun

    2015-04-01

    Thermal transport behavior in nanostructures has become increasingly important for understanding and designing next generation electronic and energy devices. This has fueled vibrant research targeting both the causes and ability to induce extraordinary reductions of thermal conductivity in crystalline materials, which has predominantly been achieved by understanding that the phonon mean free path (MFP) is limited by the characteristic size of crystalline nanostructures, known as the boundary scattering or Casimir limit. Herein, by using a highly sensitive measurement system, we show that crystalline Si (c-Si) nanotubes (NTs) with shell thickness as thin as ∼5 nm exhibit a low thermal conductivity of ∼1.1 W m(-1) K(-1). Importantly, this value is lower than the apparent boundary scattering limit and is even about 30% lower than the measured value for amorphous Si (a-Si) NTs with similar geometries. This finding diverges from the prevailing general notion that amorphous materials represent the lower limit of thermal transport but can be explained by the strong elastic softening effect observed in the c-Si NTs, measured as a 6-fold reduction in Young's modulus compared to bulk Si and nearly half that of the a-Si NTs. These results illustrate the potent prospect of employing the elastic softening effect to engineer lower than amorphous, or subamorphous, thermal conductivity in ultrathin crystalline nanostructures. PMID:25758163

  9. An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process

    NASA Astrophysics Data System (ADS)

    Nagase, Takeshi; Yamashita, Ryo; Yabuuchi, Atsushi; Lee, Jung-Goo

    2015-11-01

    A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiOx) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.

  10. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    PubMed

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition. PMID:26716230

  11. Reactive Infiltration of Silicon Melt Through Microporous Amorphous Carbon Preforms

    NASA Technical Reports Server (NTRS)

    Sangsuwan, P.; Tewari, S. N.; Gatica, J. E.; Singh, M.; Dickerson, R.

    1999-01-01

    The kinetics of unidirectional capillary infiltration of silicon melt into microporous carbon preforms have been investigated as a function of the pore morphology and melt temperature. The infiltrated specimens showed alternating bands of dark and bright regions, which corresponded to the unreacted free carbon and free silicon regions, respectively. The decrease in the infiltration front velocity for increasing infiltration distances, is in qualitative agreement with the closed-form solution of capillarity driven fluid flow through constant cross section cylindrical pores. However, drastic changes in the thermal response and infiltration front morphologies were observed for minute differences in the preforms microstructure. This suggests the need for a dynamic percolation model that would account for the exothermic nature of the silicon-carbon chemical reaction and the associated pore closing phenomenon.

  12. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    SciTech Connect

    Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

    2009-03-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10{sup 18} cm{sup -3}. Beyond this defect level, a sublinear relation is found i

  13. Directed dewetting of amorphous silicon film by a donut-shaped laser pulse

    NASA Astrophysics Data System (ADS)

    Yoo, Jae-Hyuck; In, Jung Bin; Zheng, Cheng; Sakellari, Ioanna; Raman, Rajesh N.; Matthews, Manyalibo J.; Elhadj, Selim; Grigoropoulos, Costas P.

    2015-04-01

    Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures.

  14. Grain growth and size distribution in ion-irradiated chemical vapor deposited amorphous silicon

    SciTech Connect

    Spinella, C.; Lombardo, S.; Campisano, S. U.

    1989-07-10

    The amorphous to polycrystal transition in chemical vapor deposited (CVD) amorphous silicon has been studied at 450 /degree/C under Kr ion beam irradiation. The average grain size increases linearly with the ion dose, and the grain size distribution is very narrow compared to thermally grown grains. These results are consistent with the presence of crystal seeds in CVD material. All these seeds can grow simultaneously under ion beam irradiation. For layers completely preamorphized by Ge/sup +/ implantation, no ion beam induced nucleation is observed.

  15. Ultrasmooth growth of amorphous silicon films through ion-induced long-range surface correlations

    SciTech Connect

    Redondo-Cubero, A.; Gago, R.; Vazquez, L.

    2011-01-03

    Ultrasmooth amorphous silicon films with a constant roughness below 0.2 nm were produced for film thickness up to {approx}1 {mu}m by magnetron sputtering under negative voltage substrate biasing (100-400 V). In contrast, under unbiased conditions the roughness of the resulting mounded films increased linearly with growth time due to shadowing effects. A detailed analysis of the amorphous film growth dynamics proves that the bias-induced ultrasmoothness is produced by a downhill mass transport process that leads to an extreme surface leveling inducing surface height correlations up to lateral distances close to 0.5 {mu}m.

  16. Increased medium-range order in amorphous silicon with increased substrate temperature

    SciTech Connect

    Voyles, P. M.; Gerbi, J. E.; Treacy, M. M. J.; Gibson, J. M.; Aberlson, J. R.

    2000-08-15

    Using fluctuation electron microscopy, the authors have measured the medium-range order of magnetron sputtered silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. They find a smooth increase in the medium-range order of the samples, which they interpret in the context of the paracrystalline structural model as an increase in the size of and/or volume fraction occupied by the paracrystalline grains. These data are counter to the long-standing belief that there is a sharp transition between amorphous and polycrystalline structures as a function of substrate temperature.

  17. Irradiation-induced defect clustering and amorphization in silicon carbide

    SciTech Connect

    Weber, William J.; Gao, Fei

    2010-12-01

    Previous computer simulations of multiple 10 keV Si cascades in 3C-SiC demonstrated that many damage-state properties exhibit relatively smooth, but noticeably different, dose dependencies. Recent analysis of these archived damage-state properties reveals more complex relationships between system energy, swelling, energy per defect, relative disorder, elastic modulus and elastic constant, C11. These relationships provide evidence for the onset of defect clustering and amorphization processes, both of which appear to be driven by local energy and elastic instabilities from the accumulation of defects. The results provide guidance on experimental approaches to reveal the onset of these processes.

  18. Absence of amorphous phase in high power femtosecond laser-ablated silicon

    SciTech Connect

    Rogers, Matthew S.; Grigoropoulos, Costas P.; Minor, Andrew M.; Mao, Samuel S.

    2009-01-05

    As femtosecond lasers emerge as viable tools for advanced microscale materials processing, it becomes increasingly important to understand the characteristics of materials resulting from femtosecond laser microablation or micromachining. We conducted transmission electron microscopy experiments to investigate crater structures in silicon produced by repetitive high power femtosecond laser ablation. Comparable experiments of nanosecond laser ablation of silicon were also performed. We found that an amorphous silicon layer that is typically produced in nanosecond laser ablation is absent when the material is irradiated by high power femtosecond laser pulses. Instead, only a defective single crystalline layer was observed in the high power femtosecond laser-ablated silicon crater. Possible mechanisms underlying the formation of the defective single crystalline phase are discussed.

  19. Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 1 February 2005 - 31 July 2008

    SciTech Connect

    Taylor, P. C.; Williams, G. A.

    2009-09-01

    Electron spin resonance and nuclear magnetic resonance was done on amorphous silicon samples (modules with a-Si:H and a-SixGe1-x:H intrinsic layer) to study defects that contribute to Staebler-Wronski effect.

  20. Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

    2016-07-01

    The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline silicon wafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450 °C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450 °C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltage of over 710 mV and an efficiency of over 19%.

  1. Ion implantation induced defect formation and amorphization in the Group IV semiconductors: Diamond, silicon and germanium

    NASA Astrophysics Data System (ADS)

    Hickey, Diane P.

    Silicon, which has been the workhorse of the semiconductor industry for the past several decades, is now being enhanced with other Group IV elements, such as carbon (silicon carbide) and germanium (silicon-germanium strained channels in transistors), to accentuate properties of silicon for various nanoelectronic devices. However, there is little understanding of the relationship between ion implantation and defect evolution in two of the three corners of the Group IV phase diagram. In particular, the rod-like {311} defect is theorized to be unique to the diamond crystal structure elements. Due to its ability to affect dopant diffusion, the {311} defect is well studied in silicon. However, few studies of germanium and none of diamond have analyzed extended defect formation and evolution using transmission electron spectroscopy. Using ion implantation to induce amorphization is a technological process step in Si devices and potentially for diamond nano-electronics. Defects associated with crystal regrowth in Ge and diamond are not well known. My research studies the formation conditions of extended defects and amorphization in carbon and germanium after ion implantation. Ion implantation damage in diamond-cubic single-crystal silicon, germanium and diamond was produced by Si+ implantation at 1 MeV to a dose of 1 x 1014 cm-2 and 1 x 10 15 cm-2. Damage in Si and Ge was produced by Si + implantation at 40 keV to a dose of 1 x 1014 cm-2 and 1 x 1015 cm-2, and amorphizing damage in diamond was produced by Si+ implantation at 1 MeV to a dose of 3 and 7 x 1015 cm-2. All implants were carried out at room temperature. For non-amorphizing implants (1014 Si+ cm-2) into Ge, dot-like defects formed immediately upon implantation and were stable up to temperatures of 650°C. The activation energy of these defects was determined to be approximately 0.2 +/- 0.1 eV. For amorphizing implants (1015 Si+ cm-2) into Ge and upon solid-phase epitaxial regrowth, the same types of defects seen

  2. Determination of hydrogen density of states in amorphous silicon using fractional evolution experiments

    SciTech Connect

    Franz, A.J.; Jackson, W.B.; Gland, J.L.

    1997-07-01

    Hydrogen plays an important role in the electronic behavior, structure and stability of amorphous silicon films. Therefore, determination of the hydrogen density of states (DOS) and correlation of the hydrogen DOS with the electronic film properties are important research goals. The authors have developed a novel method for determination of hydrogen DOS in silicon films, based on fractional evolution experiments. Fractional evolution experiments are performed by subjecting a silicon film to a series of linear, alternating heating and cooling ramps, while monitoring the hydrogen evolution rate. The fractional evolution data can be analyzed using two complementary methods, the fixed frequency factor approach and Arrhenius analysis. Using a rigorous, mean-field evolution model, they demonstrate the applicability of the two approaches to obtaining the hydrogen DOS in silicon films. They further validate both methods by analyzing experimental fractional evolution data for an amorphous silicon carbide film. Both types of analysis yield a similar double peaked density of states for the a-Si:C:H:D film.

  3. Preparation and Surface Analysis of a Fluorinated Amorphous Silicon for Photo-voltaic Device Application

    NASA Technical Reports Server (NTRS)

    McWhinney, Hylton G.; Burton, Dawn; Fogarty, Thomas N.

    1998-01-01

    Amorphous silicon films (a-Si:H) have been routinely deposited on a variety of substrates. Surface and interfacial studies were carried out with a PHI 5600 X-ray photo electron spectrometer. Co-deposition with fluorine yielded films having oxygen present as bulk oxide. The higher the fluorine content, the greater the amount of bulk oxygen observed. The presence of oxygen may be a contributing factor to inconsistent film properties of fluorine doped silicon materials, reported else where. A definite chemical interface between a layer containing fluorine and a layer made from pure silane has been delineated.

  4. Disorder and density of defects in hydrogenated amorphous silicon-carbon

    NASA Astrophysics Data System (ADS)

    Boulitrop, F.; Bullot, J.; Gauthier, M.; Schmidt, M. P.; Catherine, Y.

    1985-04-01

    We report subgap absorption measurements by photothermal deflection spectroscopy in a-Si 1- xC x: H alloys in the whole range of composition. We observe that incorporation of carbon in the silicon matrix increases both the inverse of the slope of the exponential absorption tail (which is due to the valence band tail) and the subgap absorption around 1.3 eV (due to defects). This result is correlated with former results on the broadening of the conduction band tail deduced from transport measurements in these alloys. It is concluded that carbon incorporation induces disorder and defect creation in the amorphous silicon matrix.

  5. Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon

    SciTech Connect

    Spinella, C.; Lombardo, S. ); Campisano, S.U. )

    1990-08-06

    The amorphous to polycrystal transition during Kr ion beam irradiation of chemical vapor deposited silicon layers has been studied in the temperature range 320--480 {degree}C. At each irradiation temperature the average grain diameter increases linearly with the Kr dose, while the grain density remains constant within the experimental accuracy. The growth rate follows a complex behavior which can be described by dynamic defect generation and annihilation. The absolute value of the grain growth rate is equal to that of the ion-assisted epitaxial layer by layer crystallization in the silicon (111) orientation. This result can be related to the crystal grain structure and morphology.

  6. TEM observations of hydrogen nanobubbles in implanted amorphous silicon

    SciTech Connect

    Jones, K.M.; Al-Jassim, M.M.; Williamson, D.L.; Acco, S.

    1996-12-31

    Over the last two decades extensive studies on the optical and electrical properties of hydrogenated amorphous Si (a-Si:H) have been reported. However, less attention was given to the structural characterization of this material partly due to the insensitivity to hydrogen of structural probes such as x-rays and electron diffraction. From a recent set of experiments, results on the solubility limit of hydrogen in a special type of a-Si:H and the characterization of hydrogen induced complexes or nanobubbles has been reported. In this study, we report TEM observations of the structural morphology of hydrogen related defects that support these recent measurements obtained by secondary ion mass spectrometry (SIMS) and small-angle x-ray scattering (SAXS).

  7. Irradiation-induced defect clustering and amorphization in silicon carbide

    SciTech Connect

    Weber, William J; Gao, Fei

    2010-01-01

    Previous computer simulations of multiple 10 keV Si cascades in 3C-SiC demonstrated that many damage-state properties exhibit relatively smooth, but noticeably different, dose dependencies. A more recent analysis of these damage-state properties, which includes additional data at low and intermediate doses, reveals more complex relationships between system energy, swelling, energy per defect, relative disorder, elastic modulus and elastic constant, C11. These relationships provide evidence for the onset of both defect clustering and solid-state amorphization, which appear to be driven by local energy and elastic instabilities from the accumulation of defects. The results provide guidance on experimental approaches to reveal the onset of these processes.

  8. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency.

    PubMed

    Funde, Adinath M; Nasibulin, Albert G; Syed, Hashmi Gufran; Anisimov, Anton S; Tsapenko, Alexey; Lund, Peter; Santos, J D; Torres, I; Gandía, J J; Cárabe, J; Rozenberg, A D; Levitsky, Igor A

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics. PMID:27005494

  9. Label-Free Direct Electronic Detection of Biomolecules with Amorphous Silicon Nanostructures

    PubMed Central

    Lund, John; Mehta, Ranjana; Parviz, Babak A.

    2007-01-01

    We present the fabrication and characterization of a nano-scale sensor made of amorphous silicon for the label-free, electronic detection of three classes of biologically important molecules: ions, oligonucleotides, and proteins. The sensor structure has an active element which is a 50 nm wide amorphous silicon semicircle and has a total footprint of less than 4 μm2. We demonstrate the functionalization of the sensor with receptor molecules and the electronic detection of three targets: H+ ions, short single-stranded DNAs, and streptavidin. The sensor is able to reliably distinguish single base-pair mismatches in 12 base long strands of DNA and monitor the introduction and identification of straptavidin in real-time. The versatile sensor structure can be readily functionalized with a wide range of receptor molecules and is suitable for integration with high-speed electronic circuits as a post-process on an integrated circuit chip. PMID:17292148

  10. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency

    NASA Astrophysics Data System (ADS)

    Funde, Adinath M.; Nasibulin, Albert G.; Gufran Syed, Hashmi; Anisimov, Anton S.; Tsapenko, Alexey; Lund, Peter; Santos, J. D.; Torres, I.; Gandía, J. J.; Cárabe, J.; Rozenberg, A. D.; Levitsky, Igor A.

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics.

  11. Efficient Crystalline Si Solar Cell with Amorphous/Crystalline Silicon Heterojunction as Back Contact: Preprint

    SciTech Connect

    Nemeth, B.; Wang, Q.; Shan, W.

    2012-06-01

    We study an amorphous/crystalline silicon heterojunction (Si HJ) as a back contact in industrial standard p-type five-inch pseudo-square wafer to replace Al back surface field (BSF) contact. The best efficiency in this study is over 17% with open-circuit (Voc) of 0.623 V, which is very similar to the control cell with Al BSF. We found that Voc has not been improved with the heterojunction structure in the back. The typical minority carrier lifetime of these wafers is on the order of 10 us. We also found that the doping levels of p-layer affect the FF due to conductivity and band gap shifting, and an optimized layer is identified. We conclude that an amorphous/crystalline silicon heterojunction can be a very promising structure to replace Al BSF back contact.

  12. Corrosion resistance and cytocompatibility of biodegradable surgical magnesium alloy coated with hydrogenated amorphous silicon.

    PubMed

    Xin, Yunchang; Jiang, Jiang; Huo, Kaifu; Tang, Guoyi; Tian, Xiubo; Chu, Paul K

    2009-06-01

    The fast degradation rates in the physiological environment constitute the main limitation for the applications of surgical magnesium alloys as biodegradable hard-tissue implants. In this work, a stable and dense hydrogenated amorphous silicon coating (a-Si:H) with desirable bioactivity is deposited on AZ91 magnesium alloy using magnetron sputtering deposition. Raman spectroscopy and Fourier transform infrared spectroscopy reveal that the coating is mainly composed of hydrogenated amorphous silicon. The hardness of the coated alloy is enhanced significantly and the coating is quite hydrophilic as well. Potentiodynamic polarization results show that the corrosion resistance of the coated alloy is enhanced dramatically. In addition, the deterioration process of the coating in simulated body fluids is systematically investigated by open circuit potential evolution and electrochemical impedance spectroscopy. The cytocompatibility of the coated Mg is evaluated for the first time using hFOB1.19 cells and favorable biocompatibility is observed. PMID:18449935

  13. Status of the DOE/SERI amorphous silicon research project - Recent advances and future directions

    NASA Astrophysics Data System (ADS)

    Stafford, B. L.; Luft, W.; von Roedern, B.; Wallace, W. L.

    Recent advances in material, cell, and module research in the US Department of Energy/Solar Energy Research Institute (DOE/SERI) Amorphous Silicon Research Project (ASRP) are reviewed. Advances in transparent conductive oxides, high-performance back reflectors, cell interconnection/patterning schemes, and encapsulants are surveyed. The program phase that began in 1990 has major research goals of reproducible, cost-effective multijunction modules with stabilized efficiencies of 10 percent for same-bandgap modules and 12 percent for different-bandgap modules. The issue of stability and reliability of amorphous silicon modules is reviewed. Multijunction cell/module structures have demonstrated improved stability in R&D cells and modules over single-junction structures.

  14. Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

    SciTech Connect

    Yan, Wensheng Gu, Min; Tao, Zhikuo; Ong, Thiam Min Brian

    2015-03-02

    The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high light trapping within amorphous silicon layer.

  15. An alternative system for mycotoxin detection based on amorphous silicon sensors

    NASA Astrophysics Data System (ADS)

    Caputo, D.; de Cesare, G.; De Rossi, P.; Fanelli, C.; Nascetti, A.; Ricelli, A.; Scipinotti, R.

    2007-05-01

    In this work we investigate, for the first time, the performances of a system based on hydrogenated amorphous silicon photosensors for the detection of Ochratoxin A. The sensor is a n-type/intrinsic/p-type amorphous silicon stacked structure deposited on a glass substrate. The mycotoxin is deposited on a thin layer chromatographic plate and aligned with the sensor. An ultraviolet radiation excites the ochratoxin A, whose fluorescence produces a photocurrent in the sensor. The photocurrent value is proportional to the deposited mycotoxin quantity. An excellent linearity of the detector response over more than two orders of magnitude of ochratoxin A amount is observed. The minimum detected mycotoxin quantity is equal to 0.1ng, suggesting that the presented detection system could be a good candidate to perform rapid and analytical ochratoxin A analysis in different kind of samples.

  16. Research Progress in the DOE/SERI Amorphous Silicon Research Project

    SciTech Connect

    Sabisky, E.; Wallace, W.; Stafford, B.; Sadlon, K.; Luft, W.

    1985-04-01

    The Amorphous Silicon Research Project (ASRP), established at the Solar Energy Research Institute (SERI) in 1983, is responsible for all U.S. DOE government-supported research activities in the field of amorphous silicon photovoltaics. The objectives and research directions of the project have been established by a Five-Year Research Plan developed at SERI in cooperation with the Department of Energy in 1984. In order to accomplish project goals, research is performed by a combination of i) multi-year programs consisting of multi-disciplinary research teams based on strong government/industry partnerships and ii) basic research performed in university, government, and industrial laboratories. A summary of recent research progress in the ASRP program is presented.

  17. Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

    SciTech Connect

    Maier, R.; Haeublein, V.; Ryssel, H.; Voellm, H.; Feili, D.; Seidel, H.; Frey, L.

    2012-11-06

    The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.

  18. Atomistic modeling of amorphous silicon carbide using a bond-order potential

    SciTech Connect

    Devanathan, Ram; Gao, Fei; Weber, William J.

    2007-02-16

    Molecular dynamics simulations were performed with a Brenner-type bond-order potential to study the melting of silicon carbide (SiC), the structure of amorphous SiC produced by quenching from the melt, and the evolution of the amorphous state after isochronal annealing at elevated temperatures. The simulations reveal that SiC melts above 3700 K with an enthalpy of fusion of about 0.6 eV/atom. The density of the quenched liquid is about 2820 kg/m3, in excellent agreement with the experimental value for SiC amorphized by neutron irradiation. In addition to the loss of long-range order, the quenched liquid shows short-range disorder as measured by the C homonuclear bond ratio. Upon annealing, there is partial recovery of shortrange order.

  19. Molecular dynamics studies of the bonding properties of amorphous silicon nitride coatings on crystalline silicon

    NASA Astrophysics Data System (ADS)

    Butler, Keith T.; Lamers, Machteld P. W. E.; Weeber, Arthur W.; Harding, John H.

    2011-12-01

    In this paper we present molecular dynamics simulations of silicon nitride, both in bulk and as an interface to crystalline silicon. We investigate, in particular, the bonding structure of the silicon nitride and analyze the simulations to search for defective geometries which have been identified as potential charge carrier traps when silicon nitride forms an interface with silicon semiconductors. The simulations reveal how the bonding patterns in silicon nitride are dependent upon the stoichiometry of the system. Furthermore we demonstrate how having an "interphase", where the nitrogen content in silicon gradually reduces toward pure silicon across a boundary region, as opposed to an interface where there is an abrupt drop in nitrogen concentration at the boundary, can result in significantly different numbers of certain important carrier trap.

  20. The use of EPID-measured leaf sequence files for IMRT dose reconstruction in adaptive radiation therapy

    PubMed Central

    Lee, Louis; Mao, Weihua; Xing, Lei

    2008-01-01

    For intensity modulated radiation treatment (IMRT) dose reconstruction, multileaf collimator (MLC) log files have been shown applicable for deriving delivered fluence maps. However, MLC log files are dependent on the accuracy of leaf calibration and only available from one linear accelerator manufacturer. This paper presents a proof of feasibility and principles in (1) using an amorphous silicon electronic portal imaging device (aSi-EPID) to capture the MLC segments during an IMRT delivery and (2) reconstituting a leaf sequence (LS) file based on the leaf end positions calculated from the MLC segments and their associated fractional monitor units. These EPID-measured LS files are then used to derive delivered fluence maps for dose reconstruction. The developed approach was tested on a pelvic phantom treated with a typical prostate IMRT plan. The delivered fluence maps, which were derived from the EPID-measured LS files, showed slight differences in the intensity levels compared with the corresponding planned ones. The dose distribution calculated with the delivered fluence maps showed a discernible difference in the high dose region when compared to that calculated with the planned fluence maps. The maximum dose in the former distribution was also 2.5% less than that in the latter one. The EPID-measured LS file can serve the same purpose as a MLC log files does for the derivation of the delivered fluence map and yet is independent of the leaf calibration. The approach also allows users who do not have access to MLC log files to probe the actual IMRT delivery and translate the information gained for dose reconstruction in adaptive radiation therapy. PMID:19070236

  1. SU-C-304-02: Robust and Efficient Process for Acceptance Testing of Varian TrueBeam Linacs Using An Electronic Portal Imaging Device (EPID)

    SciTech Connect

    Yaddanapudi, S; Cai, B; Sun, B; Li, H; Noel, C; Goddu, S; Mutic, S; Harry, T; Pawlicki, T

    2015-06-15

    Purpose: The purpose of this project was to develop a process that utilizes the onboard kV and MV electronic portal imaging devices (EPIDs) to perform rapid acceptance testing (AT) of linacs in order to improve efficiency and standardize AT equipment and processes. Methods: In this study a Varian TrueBeam linac equipped with an amorphous silicon based EPID (aSi1000) was used. The conventional set of AT tests and tolerances was used as a baseline guide, and a novel methodology was developed to perform as many tests as possible using EPID exclusively. The developer mode on Varian TrueBeam linac was used to automate the process. In the current AT process there are about 45 tests that call for customer demos. Many of the geometric tests such as jaw alignment and MLC positioning are performed with highly manual methods, such as using graph paper. The goal of the new methodology was to achieve quantitative testing while reducing variability in data acquisition, analysis and interpretation of the results. The developed process was validated on two machines at two different institutions. Results: At least 25 of the 45 (56%) tests which required customer demo can be streamlined and performed using EPIDs. More than half of the AT tests can be fully automated using the developer mode, while others still require some user interaction. Overall, the preliminary data shows that EPID-based linac AT can be performed in less than a day, compared to 2–3 days using conventional methods. Conclusions: Our preliminary results show that performance of onboard imagers is quite suitable for both geometric and dosimetric testing of TrueBeam systems. A standardized AT process can tremendously improve efficiency, and minimize the variability related to third party quality assurance (QA) equipment and the available onsite expertise. Research funding provided by Varian Medical Systems. Dr. Sasa Mutic receives compensation for providing patient safety training services from Varian Medical

  2. Highly Efficient Hybrid Polymer and Amorphous Silicon Multijunction Solar Cells with Effective Optical Management.

    PubMed

    Tan, Hairen; Furlan, Alice; Li, Weiwei; Arapov, Kirill; Santbergen, Rudi; Wienk, Martijn M; Zeman, Miro; Smets, Arno H M; Janssen, René A J

    2016-03-16

    Highly efficient hybrid multijunction solar cells are constructed with a wide-bandgap amorphous silicon for the front subcell and a low-bandgap polymer for the back subcell. Power conversion efficiencies of 11.6% and 13.2% are achieved in tandem and triple-junction configurations, respectively. The high efficiencies are enabled by deploying effective optical management and by using photoactive materials with complementary absorption. PMID:26780260

  3. Fluctuating defect density probed with noise spectroscopy in hydrogenated amorphous silicon

    SciTech Connect

    Verleg, P.A.W.E.; Uca, O.; Dijkhuis, J.I.

    1997-07-01

    Resistance fluctuations have been studied in hydrogenated amorphous silicon in the temperature range between 300 K and 450 K. The primary noise source has a power spectrum of approximately 1/f and is ascribed to hydrogen motion. Hopping of weakly bound hydrogen is thermally activated at such low temperatures with an average activation energy of 0.85 eV. The attempt rate amounts to 7 {center_dot} 10{sup 12} s{sup {minus}1}.

  4. Photocapacitance and hole drift mobility measurements in hydrogenated amorphous silicon (a-Si:H)

    SciTech Connect

    Nurdjaja, I.; Schiff, E.A.

    1997-07-01

    The authors present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

  5. High electric field effects on the thermal generation in hydrogenated amorphous silicon

    SciTech Connect

    Ilie, A.; Equer, B.

    1997-07-01

    The authors have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.

  6. Polarized electroabsorption spectra and light soaking of solar cells based on hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Jiang, Lin; Wang, Qi; Schiff, E. A.; Guha, S.; Yang, J.

    1998-03-01

    We present grazing-incidence measurements of polarized electroabsorption spectra in p-i-n solar cells based on hydrogenated amorphous silicon (a-Si:H). We find a significantly stronger polarization dependence in the present measurements compared with earlier work based on electroabsorption detected using coplanar electrodes on a-Si:H thin films. We do not find any significant dependence of the polarized electroabsorption upon light soaking, although this effect was found in previous work with coplanar electrodes.

  7. Estimation of the adequacy of the fractal model of the atomic structure of amorphous silicon

    SciTech Connect

    Golodenko, A. B.

    2010-01-15

    A method of constructing a fractal model of noncrystalline solid substance is considered using the example of amorphous silicon. In systems of iteration functions, the physical meaning of dihedral and valence angles of the elementary crystallographic cell is assigned to arguments. The model adequacy is estimated by the radial distribution function, the atomic structure density, the distribution of valence and dihedral angles, and the density of dangling interatomic bonds.

  8. Magneto-optical switch with amorphous silicon waveguides on magneto-optical garnet

    NASA Astrophysics Data System (ADS)

    Ishida, Eiichi; Miura, Kengo; Shoji, Yuya; Mizumoto, Tetsuya; Nishiyama, Nobuhiko; Arai, Shigehisa

    2016-08-01

    We fabricated a magneto-optical (MO) switch with a hydrogenated amorphous silicon waveguide on an MO garnet. The switch is composed of a 2 × 2 Mach–Zehnder interferometer (MZI). The switch state is controlled by an MO phase shift through a magnetic field generated by a current flowing in an electrode located on the MZI. The switching operation was successfully demonstrated with an extinction ratio of 11.7 dB at a wavelength of 1550 nm.

  9. Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor

    DOEpatents

    Hanak, Joseph J.

    1985-06-25

    An improved method and apparatus for the controlled deposition of a layer of hydrogenated amorphous silicon on a substrate. Means is provided for the illumination of the coated surface of the substrate and measurement of the resulting photovoltage at the outermost layer of the coating. Means is further provided for admixing amounts of p type and n type dopants to the reactant gas in response to the measured photovoltage to achieve a desired level and type of doping of the deposited layer.

  10. The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots.

    PubMed

    Askari, Sadegh; Svrcek, Vladmir; Maguire, Paul; Mariotti, Davide

    2015-12-22

    Hydrogenation in amorphous silicon quantum dots (QDs) has a dramatic impact on the corresponding optical properties and band energy structure, leading to a quantum-confined composite material with unique characteristics. The synthesis of a-Si:H QDs is demonstrated with an atmospheric-pressure plasma process, which allows for accurate control of a highly chemically reactive non-equilibrium environment with temperatures well below the crystallization temperature of Si QDs. PMID:26523743

  11. Failure analysis of thin-film amorphous-silicon solar-cell modules

    NASA Technical Reports Server (NTRS)

    Kim, Q.

    1984-01-01

    A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

  12. Toughening thin-film structures with ceramic-like amorphous silicon carbide films.

    PubMed

    Matsuda, Yusuke; Ryu, Ill; King, Sean W; Bielefeld, Jeff; Dauskardt, Reinhold H

    2014-01-29

    A significant improvement of adhesion in thin-film structures is demonstrated using embedded ceramic-like amorphous silicon carbide films (a-SiC:H films). a-SiC:H films exhibit plasticity at the nanoscale and outstanding chemical and thermal stability unlike most materials. The multi-functionality and the ease of processing of the films have potential to offer a new toughening strategy for reliability of nanoscale device structures. PMID:23894055

  13. Electron-irradiation-induced crystallization at metallic amorphous/silicon oxide interfaces caused by electronic excitation

    NASA Astrophysics Data System (ADS)

    Nagase, Takeshi; Yamashita, Ryo; Lee, Jung-Goo

    2016-04-01

    Irradiation-induced crystallization of an amorphous phase was stimulated at a Pd-Si amorphous/silicon oxide (a(Pd-Si)/SiOx) interface at 298 K by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Under irradiation, a Pd-Si amorphous phase was initially formed at the crystalline face-centered cubic palladium/silicon oxide (Pd/SiOx) interface, followed by the formation of a Pd2Si intermetallic compound through irradiation-induced crystallization. The irradiation-induced crystallization can be considered to be stimulated not by defect introduction through the electron knock-on effects and electron-beam heating, but by the electronic excitation mechanism. The observed irradiation-induced structural change at the a(Pd-Si)/SiOx and Pd/SiOx interfaces indicates multiple structural modifications at the metal/silicon oxide interfaces through electronic excitation induced by the electron-beam processes.

  14. Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

    PubMed

    Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

    2008-11-01

    Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology. PMID:19198289

  15. Meyer-Neldel rule in the space-charge-limited conduction of hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Oversluizen, G.; Nieuwesteeg, K. J. B. M.; Boogaard, J.

    1991-07-01

    The conductivity of a hydrogenated amorphous silicon n+-intrinsic-n+ (n-i-n) structure is reported as a function of temperature. The space-charge-limited conductivity σ is shown to follow the Meyer-Neldel rule (MNR) [W. Meyer and H. Neldel, Z. Tech. Phys. 18, 588 (1937)]: σ =σ00 exp(Ea/kT0) exp(-Ea/kT), where Ea is the conductivity activation energy, k is Boltzmann's constant, and T is the absolute temperature. The characteristic MNR parameters found are σ00=10-2.4±0.1(Ω cm)-1 and T0=590±10 K. These values are practically equal to those previously found for the MNR in the ohmic conductivity in a series of hydrogenated amorphous silicon n-i-n structures with varying i-layer thicknesses. It is argued that the MNR can be quantitatively explained by the statistical shift of the Fermi energy and that a single set of parameters corresponding to σ00 =10-3±1(Ω cm)-1 and T0=550±100 K is applicable for both the space-charge limited and the ohmic conductivity of i-type hydrogenated amorphous silicon. The MNR parameters are rather insensitive to density of states details.

  16. Light-induced Voc increase and decrease in high-efficiency amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Stuckelberger, M.; Riesen, Y.; Despeisse, M.; Schüttauf, J.-W.; Haug, F.-J.; Ballif, C.

    2014-09-01

    High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (Voc) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the Voc increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclude varying the effective p-layer thickness as the cause of the substrate roughness dependence. Instead, we explain the observations by an increase of the dangling-bond density in both the p-layer—causing a Voc increase—and in the intrinsic absorber layer, causing a Voc decrease. We present a mechanism for the light-induced increase and decrease, justified by the investigation of light-induced changes of the p-layer and supported by Advanced Semiconductor Analysis simulation. We conclude that a shift of the electron quasi-Fermi level towards the conduction band is the reason for the observed Voc enhancements, and poor amorphous silicon quality on rough substrates enhances this effect.

  17. Diagnostics of a glow discharge used to produce hydrogenated amorphous silicon films. Final subcontract report

    SciTech Connect

    Gallagher, A.

    1984-11-01

    This report and recent publications cited summarize our measurements of the neutral radicals produced in pure silane discharges, our measurements of the interaction of silane with a growing amorphous silicon surface, qualitative models of discharge neutral radical chemistry, and quantitative models of dc discharge ion chemistry. All radicals of the monosilane and disilane groups have been measured and are reported as a function of discharge parameters, but not yet for the full range of parameters that must be investigated for detailed analysis. Observations of the reaction of SiH/sub 4/ with a hot amorphous silicon surface are given. These are closely related to the dominant discharge film deposition mechanism of SiH/sub 3/ reacting with a hydrogen covered amorphous silicon surface and a surface reaction model is suggested that explains some but not all of our data. The dc discharge model is used to obtain quantitative predictions of the ion species at the cathode surface of a dc discharge. This is compared to observations and used to explain the observations at our laboratory and other laboratories. We conclude that most but not all features of the ion chemistry in dc discharges of pure silane can be relatively well understood from this model.

  18. Synchrotron applications of an amorphous silicon flat-panel detector.

    SciTech Connect

    Lee, J. H.; Can Aydiner, C.; Almer, J.; Bernier, J.; Chapman, K. W.; Chupas, P. J.; Haeffner, D.; Kump, K.; Lee, P. L.; Lienert, U.; Miceli, A.; Vera, G.; LANL; GE Healthcare

    2008-01-01

    A GE Revolution 41RT flat-panel detector (GE 41RT) from GE Healthcare (GE) has been in operation at the Advanced Photon Source for over two years. The detector has an active area of 41 cm x 41 cm with 200 {micro}m x 200 {micro}m pixel size. The nominal working photon energy is around 80 keV. The physical set-up and utility software of the detector system are discussed in this article. The linearity of the detector response was measured at 80.7 keV. The memory effect of the detector element, called lag, was also measured at different exposure times and gain settings. The modulation transfer function was measured in terms of the line-spread function using a 25 {micro}m x 1 cm tungsten slit. The background (dark) signal, the signal that the detector will carry without exposure to X-rays, was measured at three different gain settings and with exposure times of 1 ms to 15 s. The radial geometric flatness of the sensor panel was measured using the diffraction pattern from a CeO{sub 2} powder standard. The large active area and fast data-capturing rate, i.e. 8 frames s{sup -1} in radiography mode, 30 frames s{sup -1} in fluoroscopy mode, make the GE 41RT one of a kind and very versatile in synchrotron diffraction. The loading behavior of a Cu/Nb multilayer material is used to demonstrate the use of the detector in a strain-stress experiment. Data from the measurement of various samples, amorphous SiO{sub 2} in particular, are presented to show the detector effectiveness in pair distribution function measurements.

  19. Synchrotron applications of an amorphous silicon flat-panel detector.

    PubMed

    Lee, John H; Aydiner, C Can; Almer, Jonathan; Bernier, Joel; Chapman, Karena W; Chupas, Peter J; Haeffner, Dean; Kump, Ken; Lee, Peter L; Lienert, Ulrich; Miceli, Antonino; Vera, German

    2008-09-01

    A GE Revolution 41RT flat-panel detector (GE 41RT) from GE Healthcare (GE) has been in operation at the Advanced Photon Source for over two years. The detector has an active area of 41 cm x 41 cm with 200 microm x 200 microm pixel size. The nominal working photon energy is around 80 keV. The physical set-up and utility software of the detector system are discussed in this article. The linearity of the detector response was measured at 80.7 keV. The memory effect of the detector element, called lag, was also measured at different exposure times and gain settings. The modulation transfer function was measured in terms of the line-spread function using a 25 microm x 1 cm tungsten slit. The background (dark) signal, the signal that the detector will carry without exposure to X-rays, was measured at three different gain settings and with exposure times of 1 ms to 15 s. The radial geometric flatness of the sensor panel was measured using the diffraction pattern from a CeO(2) powder standard. The large active area and fast data-capturing rate, i.e. 8 frames s(-1) in radiography mode, 30 frames s(-1) in fluoroscopy mode, make the GE 41RT one of a kind and very versatile in synchrotron diffraction. The loading behavior of a Cu/Nb multilayer material is used to demonstrate the use of the detector in a strain-stress experiment. Data from the measurement of various samples, amorphous SiO(2) in particular, are presented to show the detector effectiveness in pair distribution function measurements. PMID:18728319

  20. Amorphous silicon thin films: The ultimate lightweight space solar cell

    NASA Technical Reports Server (NTRS)

    Vendura, G. J., Jr.; Kruer, M. A.; Schurig, H. H.; Bianchi, M. A.; Roth, J. A.

    1994-01-01

    Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

  1. Broadband all-optical modulation in hydrogenated-amorphous silicon waveguides.

    PubMed

    Narayanan, Karthik; Elshaari, Ali W; Preble, Stefan F

    2010-05-10

    We demonstrate broadband all-optical modulation in low loss hydrogenated-amorphous silicon (a-Si:H) waveguides. Significant modulation (approximately 3 dB) occurs with a device of only 15 microm without the need for cavity interference effects in stark contrast to an identical crystalline silicon waveguide. We attribute the enhanced modulation to the significantly larger free-carrier absorption effect of a-Si:H, estimated here to be alpha = 1.6310(-16)N cm(-1). In addition, we measured the modulation time to be only tau(c) approximately 400 ps, which is comparable to the recombination rate measured in sub-micron crystalline silicon waveguides, illustrating the strong dominance of surface recombination in similar sized (460 nm x 250 nm) a-Si:H waveguides. Consequently, a-Si:H could serve as a high performance platform for backend integrated CMOS photonics. PMID:20588830

  2. Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.

    PubMed

    Yang, Jun; Bhattacharya, Pallab

    2008-03-31

    The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a:Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of approximately 10 dB/cm at a wavelength of 1.05 microm. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 microm-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets. PMID:18542613

  3. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei; Jiang, Xuening; Xu, Hongxia

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  4. SU-E-T-456: Development of An EPID-Based Output Measurement and Dosimetric Verification Tool for Electron Beam Therapy

    SciTech Connect

    Ding, A; Han, B; Xing, L

    2014-06-01

    Purpose: To develop an efficient and robust method for output and absolute dosimetric measurements of electron beam therapy by using a high spatialresolution and high frame-rate amorphous silicon flat-panel electronic portal imaging device (EPID). Methods: A previously-established EPID dosimetry system was extended to measure the output factors of electron beams of various sizes and their planar dose distributions at reference depths. Specific EPID responses to different electron energies were derived from Monte Carlo (MC) simulations to de-convolve the EPID raw images to the incident electron fluence map. To reconstruct the 2D water-based dose distribution map at reference depths for different energies, the fluence map was further convolved with a MC simulated pencil beam kernel. Different energies of 6, 9, 12, 16, and 20 MeV from a Varian C-series linac were tested. Standard square fields ranging from 2×2 to 15×15 cm{sup 2} were measured and validated against film/ion chamber measurements. Small fields of different patient cases with irregular cutout shapes were also tested. Results: The EPIDmeasured output factors for 2×2, 3×3, 6×6, and 10×10 cm{sup 2} fields with all electron energies agree with the film/ion chamber data within 2.7%. The average discrepancy between EPID and film/ion chamber measurements was 1.4%. The differences for the three patient cases were 0.1%, 2.1%, and 1.6%. Deliveries with different monitor units were tested and the results exhibited good linearity. Measurements with different dose rate showed that the dose rate dependence was less than 1%. Using the proposed method, 2D absolute dose maps were created from the EPID raw images and the results were consistent with film measurements. Conclusion: The efficient data readout and portability of the newly developed EPID system provides an efficient and accurate solution for electron beam therapy. It addresses an important unmet clinical need for a fast and reliable small field output

  5. Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films

    SciTech Connect

    Wen, Guozhi; Zeng, Xiangbin Wen, Xixin; Liao, Wugang

    2014-04-28

    Silicon quantum dots (QDs) embedded in hydrogenated amorphous Si-rich silicon carbide (α-SiC:H) thin films were realized by plasma-enhanced chemical vapor deposition process and post-annealing. Fluorescence spectroscopy was used to characterize the room-temperature photoluminescence properties. X-ray photoelectron spectroscopy was used to analyze the element compositions and bonding configurations. Ultraviolet visible spectroscopy, Raman scattering, and high-resolution transmission electron microscopy were used to display the microstructural properties. Photoluminescence measurements reveal that there are six emission sub-bands, which behave in different ways. The peak wavelengths of sub-bands P1, P2, P3, and P6 are pinned at about 425.0, 437.3, 465.0, and 591.0 nm, respectively. Other two sub-bands, P4 is red-shifted from 494.6 to 512.4 nm and P5 from 570.2 to 587.8 nm with temperature increasing from 600 to 900 °C. But then are both blue-shifted, P4 to 500.2 nm and P5 to 573.8 nm from 900 to 1200 °C. The X-ray photoelectron spectroscopy analysis shows that the samples are in Si-rich nature, Si-O and Si-N bonds consumed some silicon atoms. The structure characterization displays that a separation between silicon phase and SiC phase happened; amorphous and crystalline silicon QDs synthesized with increasing the annealing temperature. P1, P2, P3, and P6 sub-bands are explained in terms of defect-related emission, while P4 and P5 sub-bands are explained in terms of quantum confinement effect. A correlation between the peak wavelength shift, as well as the integral intensity of the spectrum and crystallization of silicon QDs is supposed. These results help clarify the probable luminescence mechanisms and provide the possibility to optimize the optical properties of silicon QDs in Si-rich α-SiC: H materials.

  6. Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films

    NASA Astrophysics Data System (ADS)

    Wen, Guozhi; Zeng, Xiangbin; Wen, Xixin; Liao, Wugang

    2014-04-01

    Silicon quantum dots (QDs) embedded in hydrogenated amorphous Si-rich silicon carbide (α-SiC:H) thin films were realized by plasma-enhanced chemical vapor deposition process and post-annealing. Fluorescence spectroscopy was used to characterize the room-temperature photoluminescence properties. X-ray photoelectron spectroscopy was used to analyze the element compositions and bonding configurations. Ultraviolet visible spectroscopy, Raman scattering, and high-resolution transmission electron microscopy were used to display the microstructural properties. Photoluminescence measurements reveal that there are six emission sub-bands, which behave in different ways. The peak wavelengths of sub-bands P1, P2, P3, and P6 are pinned at about 425.0, 437.3, 465.0, and 591.0 nm, respectively. Other two sub-bands, P4 is red-shifted from 494.6 to 512.4 nm and P5 from 570.2 to 587.8 nm with temperature increasing from 600 to 900 °C. But then are both blue-shifted, P4 to 500.2 nm and P5 to 573.8 nm from 900 to 1200 °C. The X-ray photoelectron spectroscopy analysis shows that the samples are in Si-rich nature, Si-O and Si-N bonds consumed some silicon atoms. The structure characterization displays that a separation between silicon phase and SiC phase happened; amorphous and crystalline silicon QDs synthesized with increasing the annealing temperature. P1, P2, P3, and P6 sub-bands are explained in terms of defect-related emission, while P4 and P5 sub-bands are explained in terms of quantum confinement effect. A correlation between the peak wavelength shift, as well as the integral intensity of the spectrum and crystallization of silicon QDs is supposed. These results help clarify the probable luminescence mechanisms and provide the possibility to optimize the optical properties of silicon QDs in Si-rich α-SiC: H materials.

  7. Amorphous silicon thin film for all-optical micromodulator

    NASA Astrophysics Data System (ADS)

    Nigro, Maria Arcangela M.; Cantore, Francesca; Della Corte, Francesco Giuseppe; Summonte, Caterina

    2003-04-01

    Photoinduced absorption by VIS radiation in a-Si:H has been studied in-guide, in order to realise a novel all-optical waveguide micromodulator for application at 1.3 and 1.55 μm fiber communication wavelengths. In a-Si:H the photoinduced effects and the NIR absorption both involve dangling bonds states. The density of these states, deep in the gap, can be varied with doping. Therefore three waveguide prototypes have been fabricated by Plasma Enhanced Chemical Vapour Deposition on a silicon wafer. Their structure consist of a a-Si:H/SiO2 stack where the a-Si:H cores have different doping. The upper cladding is air. Optical measures on the core materials and signal transmission analysis in-guide at bit rates up to 200 kBit/s have been carried out. The excitation source of the VIS pump system for in-guide analysis consisted of simple, low cost AlInGaP LED"s controlled by a pulse generator. The pump and probe measures have been performed with different pump wavelengths and by varying the illumination intensity. LED"s with wavelengths of 644, 612, 590 and 571 nm have been alternatively used. For each pump wavelength, the light intensity was varied between 0,15 and 0,85 mW/mm2. The results confirms that the optical modulation of the NIR signal enhances at high doping levels and for longer wavelengths. The modulation speed is probably limited by recombination phenomena.

  8. Integration of an amorphous silicon passive pixel sensor array with a lateral amorphous selenium detector for large area indirect conversion x-ray imaging applications

    NASA Astrophysics Data System (ADS)

    Wang, Kai; Yazdandoost, Mohammad Y.; Keshavarzi, Rasoul; Shin, Kyung-Wook; Hristovski, Christos; Abbaszadeh, Shiva; Chen, Feng; Majid, Shaikh Hasibul; Karim, Karim S.

    2011-03-01

    Previously, we reported on a single-pixel detector based on a lateral a-Se metal-semiconductor-metal structure, intended for indirect conversion X-ray imaging. This work is the continuous effort leading to the first prototype of an indirect conversion X-ray imaging sensor array utilizing lateral amorphous selenium. To replace a structurally-sophisticated vertical multilayer amorphous silicon photodiode, a lateral a-Se MSM photodetector is employed which can be easily integrated with an amorphous silicon thin film transistor passive pixel sensor array. In this work, both 2×2 macro-pixel and 32×32 micro-pixel arrays were fabricated and tested along with discussion of the results.

  9. On the thermodynamically stable amorphous phase of polymer-derived silicon oxycarbide

    NASA Astrophysics Data System (ADS)

    Yu, Liping; Raj, Rishi

    2015-09-01

    A model for the thermodynamic stability of amorphous silicon oxycarbide (SiCO) is presented. It builds upon the reasonably accepted model of SiCO which is conceived as a nanodomain network of graphene. The domains are expected to be filled with SiO2 molecules, while the interface with graphene is visualized to contain mixed bonds described as Si bonded to C as well as to O atoms. Normally these SiCO compositions would be expected to crystallize. Instead, calorimetric measurements have shown that the amorphous phase is thermodynamically stable. In this article we employ first-principles calculations to estimate how the interfacial energy of the graphene networks is favorably influenced by having mixed bonds attached to them. We analyze the ways in which this reduction in interfacial energy can stabilize the amorphous phase. The approach highlights how density functional theory computations can be combined with the classical analysis of phase transformations to explain the behavior of a complex material. In addition we discover a two-dimensional lattice structure, with the composition Si2C4O3 that is constructed from a single layer of graphene congruent with silicon and oxygen bonds on either side.

  10. On the thermodynamically stable amorphous phase of polymer-derived silicon oxycarbide.

    PubMed

    Yu, Liping; Raj, Rishi

    2015-01-01

    A model for the thermodynamic stability of amorphous silicon oxycarbide (SiCO) is presented. It builds upon the reasonably accepted model of SiCO which is conceived as a nanodomain network of graphene. The domains are expected to be filled with SiO2 molecules, while the interface with graphene is visualized to contain mixed bonds described as Si bonded to C as well as to O atoms. Normally these SiCO compositions would be expected to crystallize. Instead, calorimetric measurements have shown that the amorphous phase is thermodynamically stable. In this article we employ first-principles calculations to estimate how the interfacial energy of the graphene networks is favorably influenced by having mixed bonds attached to them. We analyze the ways in which this reduction in interfacial energy can stabilize the amorphous phase. The approach highlights how density functional theory computations can be combined with the classical analysis of phase transformations to explain the behavior of a complex material. In addition we discover a two-dimensional lattice structure, with the composition Si2C4O3 that is constructed from a single layer of graphene congruent with silicon and oxygen bonds on either side. PMID:26419962

  11. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial

    NASA Astrophysics Data System (ADS)

    Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

    2016-01-01

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications.

  12. On the thermodynamically stable amorphous phase of polymer-derived silicon oxycarbide

    PubMed Central

    Yu, Liping; Raj, Rishi

    2015-01-01

    A model for the thermodynamic stability of amorphous silicon oxycarbide (SiCO) is presented. It builds upon the reasonably accepted model of SiCO which is conceived as a nanodomain network of graphene. The domains are expected to be filled with SiO2 molecules, while the interface with graphene is visualized to contain mixed bonds described as Si bonded to C as well as to O atoms. Normally these SiCO compositions would be expected to crystallize. Instead, calorimetric measurements have shown that the amorphous phase is thermodynamically stable. In this article we employ first-principles calculations to estimate how the interfacial energy of the graphene networks is favorably influenced by having mixed bonds attached to them. We analyze the ways in which this reduction in interfacial energy can stabilize the amorphous phase. The approach highlights how density functional theory computations can be combined with the classical analysis of phase transformations to explain the behavior of a complex material. In addition we discover a two-dimensional lattice structure, with the composition Si2C4O3 that is constructed from a single layer of graphene congruent with silicon and oxygen bonds on either side. PMID:26419962

  13. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial

    PubMed Central

    Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

    2016-01-01

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications. PMID:26785682

  14. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial.

    PubMed

    Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

    2016-01-01

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 10(6) and 3.72 × 10(6) respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications. PMID:26785682

  15. Uncooled amorphous-silicon technology: high-performance achievement and future trends

    NASA Astrophysics Data System (ADS)

    Mottin, Eric; Bain, Astrid; Martin, Jean-Luc; Ouvrier-Buffet, Jean-Louis; Yon, Jean-Jacques; Chatard, Jean-Pierre; Tissot, Jean-Luc

    2002-08-01

    The emergence of uncooled infrared detectors has opened new opportunities for IR imaging both for military and civil applications. Infrared imaging sensors that operate without cryogenic cooling have the potential to provide the military or civilian users with infrared vision capabilities packaged in a camera of extremely small size, weight and power. Uncooled infrared sensor technology has advanced rapidly in the past few years. Higher performance sensors, electronics integration at the sensor, and new concepts for signal processing are generating advanced infrared focal plane arrays. This would significantly reduce the cost and accelerate the implementation of sensors for applications such as surveillance or predictive maintenance. We present the uncooled infrared detector operation principle and the development at CEA/LETI from the 256 x 64 with a pitch of 50 micrometers to the 320 x 240 with a pitch of 35 micrometers . LETI has been involved in Amorphous Silicon uncooled microbolometer development since 1992. This silicon IR detection is now well mastered and matured so that industrial transfer of LETI technology was performed in 2000 towards Sofradir. Industrial production of 320 x 240 microbolometer array with 45micrometers pitch is then started., we present the readout circuit architectures designs and its evolution from the 256 x 64 array to the different version of 320 x 240 arrays. Electro-optical results obtained from these IRCMOS are presented. NEDT close to 30 mK is now obtained with our standard microbolometer amorphous silicon technology.

  16. Uncooled amorphous silicon technology enhancement for 25-μm pixel pitch achievement

    NASA Astrophysics Data System (ADS)

    Mottin, Eric; Bain, Astrid; Martin, Jean-Luc; Ouvrier-Buffet, Jean-Louis; Bisotto, Sylvette; Yon, Jean-Jacques; Tissot, Jean-Luc

    2003-01-01

    The emergence of uncooled infrared detectors has opened new opportunities for IR imaging both for military and civil applications. Infrared imaging sensors that operate without cryogenic cooling have the potential to provide the military or civilian users with infrared vision capabilities packaged in a camera of extremely small size, weight and power. Uncooled infrared sensor technology has advanced rapidly in the past few years. Higher performance sensors, electronics integration at the sensor, and new concepts for signal processing are generating advanced infrared focal plane arrays. This would significantly reduce the cost and accelerate the implementation of sensors for applications such as surveillance or predictive maintenance. We present the uncooled infrared detector operation principle and the development at CEA/LETI from the 256×64 with a pitch of 50 μm to the 320×240 with a pitch of 35 μm. LETI has been involved in Amorphous Silicon uncooled microbolometer development since 1992. This silicon IR detection is now well mastered and matured so that industrial transfer of LETI technology was performed in 2000 towards Sofradir. Industrial production of 320 μ240 microbolometer array with 45μm pitch is then started., we present the readout circuit architectures designs and its evolution from the 256×64 array to the different version of 320×240 arrays. Electro-optical results obtained from these IRCMOS are presented. NEDT close to 30 mK is now obtained with our standard microbolometer amorphous silicon technology.

  17. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    PubMed Central

    Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

    2016-01-01

    Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature. PMID:26751446

  18. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

    PubMed

    Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

    2016-01-01

    Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature. PMID:26751446

  19. Effect of surface morphology on laser-induced crystallization of amorphous silicon thin films

    NASA Astrophysics Data System (ADS)

    Huang, Lu; Jin, Jing; Wang, Guohua; Shi, Weimin; Yang, Weiguang; Yuan, Zhijun; Cao, Zechun; Zhou, Jun; Lou, Qihong; Liu, Jin; Wei, Guangpu

    2013-12-01

    The effect of surface morphology on laser-induced crystallization of hydrogenated intrinsic amorphous silicon (a-Si:H) thin films deposited by PECVD is studied in this paper. The thin films are irritated by a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser. An effective melting model is built to identify the variation of melting regime influenced by laser crystallization. Based on the experimental results, the established correlation between the grain growth characterized by AFM and the crystalline fraction (Xc) obtained from Raman spectroscopy suggests that the crystallized process form amorphous phase to polycrystalline phase. Therefore, the highest crystalline fraction (Xc) is obtained by a optimized laser energy density.

  20. Electronic transport in nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

    NASA Astrophysics Data System (ADS)

    Bodurtha, Kent Edward

    Recent interest in composite materials based on hydrogenated amorphous silicon (a-Si:H) stems in part from its potential for technical applications in thin film transistors and solar cells. Previous reports have shown promising results for films of a-Si:H with embedded silicon nanocrystals, with the goal of combining the low cost, large area benefits of hydrogenated amorphous silicon with the superior electronic characteristics of crystalline material. These materials are fabricated in a dual-chamber plasma-enhanced chemical vapor deposition system in which the nanocrystals are produced separately from the amorphous film, providing the flexibility to independently tune the growth parameters of each phase; however, electronic transport through these and other similar materials is not well understood. This thesis reports the synthesis and characterization of thin films composed of germanium nanocrystals embedded in a-Si:H. The results presented here describe detailed measurements of the conductivity, photoconductivity and thermopower which reveal a transition from conduction through the a-Si:H for samples with few germanium nanocrystals, to conduction through the nanocrystal phase as the germanium crystal fraction XGe is increased. These films display reduced photosensitivity as XGe is increased, but an unexpected increase in the dark conductivity is found in samples with X Ge > 5% after long light exposures. Detailed studies of the conductivity temperature dependence in these samples exposes a subtle but consistent deviation from the standard Arrhenius expression; the same departure is found in samples of pure a-Si:H; a theoretical model is presented which accurately describes the actual conductivity temperature dependence.

  1. Elastic measurements of TLSs in amorphous silicon at mK temperatures

    NASA Astrophysics Data System (ADS)

    Fefferman, Andrew; Liu, Xiao; Metcalf, Thomas; Jernigan, Glenn; Collin, Eddy

    The low temperature properties of glass are distinct from those of crystals due to the presence of poorly understood low-energy excitations. These are usually thought to be atoms tunneling between nearby equilibria, forming tunneling two level systems (TLSs). Elastic measurements on amorphous silicon films deposited with e-beam evaporation showed that this material contains a variable density of TLSs that decreases as the growth temperature increases from 45 to 400 deg C. We will present an analysis of the elastic properties of these films down to the low mK range in the framework of the standard tunneling model

  2. Influence of deposition conditions on the 1/f noise in hydrogenated amorphous silicon

    SciTech Connect

    West, P.W.; Quicker, D.; Dyalsingh, H.M.; Kakalios, J.

    1997-07-01

    The electronic properties of a series of n-type doped hydrogenated amorphous silicon (a-Si:H) films grown with deposition rates ranging from 2 {angstrom}/s to 33 {angstrom}/s have been studied. Infrared absorption spectroscopy shows an increase in Si-H{sub 2} content with deposition rate, concurrent with a decreasing conductivity, increasing thermal equilibration relaxation time, and increasing disorder at the mobility edge as measured by the difference in thermopower and dark conductivity activation energies. The current 1/f noise properties become highly nonstationary, with increased variability and inapplicability of statistical analysis as the deposition rate increases.

  3. Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanism

    NASA Astrophysics Data System (ADS)

    Toyoda, H.; Sugai, H.; Kato, K.; Yoshida, A.; Okuda, T.

    1986-06-01

    The composition of particle flux to deposit hydrogenated amorphous silicon films in a glow discharge is controlled by a combined electrostatic-magnetic deflection technique. As a result, the films are formed firstly without hydrogen ion flux, secondly by neutral flux only, and thirdly by all species fluxes. Comparison of these films reveals the significant role of hydrogen in the surface reactions. Hydrogen breaks the Si-Si bond, decreases the sticking probability of the Si atom, and replaces the SiH bond by a SiH2 bond to increase the hydrogen content of the films.

  4. High efficiency multijunction amorphous silicon alloy-based solar cells and modules

    SciTech Connect

    Guha, S.; Yang, J.; Banerjeee, A.; Glatfelter, T.; Hoffman, K.; Xu, X. )

    1994-06-30

    We have achieved initial efficiency of 11.4% as confirmed by National Renewable Energy Laboratory (NREL) on a multijunction amorphous silicon alloy photovoltaic module of one-square-foot-area. [bold This] [bold is] [bold the] [bold highest] [bold initial] [bold efficiency] [bold confirmed] [bold by] [bold NREL] [bold for] [bold any] [bold thin] [bold film] [bold photovoltaic] [bold module]. After light soaking for 1000 hours at 50 [degree]C under one-sun illumination, a module with initial efficiency of 11.1% shows a stabilized efficiency of 9.5%. Key factors that led to this high performance are discussed.

  5. Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy

    SciTech Connect

    Sevastyanov, M. G.; Lobkov, V. S.; Shmelev, A. G.; Leontev, A. V.; Matuhin, V. L.; Bobyl, A. V.; Terukov, E. I.; Kukin, A. V.

    2013-10-15

    Experimental results on the electron relaxation time and diffusion coefficient in hydrogenated amorphous silicon films that exhibit intrinsic and electronic conductivity at room temperature are reported. It is found that, for these two types of films, the relaxation times are 1 ns and 465 ps and the diffusion coefficients are 0.54 and 0.83 cm{sup 2} s{sup -1}. It is established that, as the pulse intensity is increased, the decay time of the induced-grating signal shortens.

  6. Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films

    NASA Astrophysics Data System (ADS)

    He, Jian; Li, Wei; Xu, Rui; Qi, Kang-Cheng; Jiang, Ya-Dong

    2011-12-01

    The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films. Results reveal that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.

  7. Thin metal layer as transparent electrode in n-i-p amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Theuring, Martin; Geissendörfer, Stefan; Vehse, Martin; von Maydell, Karsten; Agert, Carsten

    2014-07-01

    In this paper, transparent electrodes, based on a thin silver film and a capping layer, are investigated. Low deposition temperature, flexibility and low material costs are the advantages of this type of electrode. Their applicability in structured n-i-p amorphous silicon solar cells is demonstrated in simulation and experiment. The influence of the individual layer thicknesses on the solar cell performance is discussed and approaches for further improvements are given. For the silver film/capping layer electrode, a higher solar cell efficiency could be achieved compared to a reference ZnO:Al front contact.

  8. X-ray imaging with amorphous silicon active matrix flat-panel imagers (AMFPIs)

    NASA Astrophysics Data System (ADS)

    El-Mohri, Youcef; Antonuk, Larry E.; Jee, Kyung-Wook; Maolinbay, Manat; Rong, Xiujiang; Siewerdsen, Jeffrey H.; Verma, Manav; Zhao, Qihua

    1997-07-01

    Recent advances in thin-film electronics technology have opened the way for the use of flat-panel imagers in a number of medical imaging applications. These novel imagers offer real time digital readout capabilities (˜30 frames per second), radiation hardness (>106cGy), large area (30×40 cm2) and compactness (˜1 cm). Such qualities make them strong candidates for the replacement of conventional x-ray imaging technologies such as film-screen and image intensifier systems. In this report, qualities and potential of amorphous silicon based active matrix flat-panel imagers are outlined for various applications such as radiation therapy, radiography, fluoroscopy and mammography.

  9. The application of thick hydrogenated amorphous silicon layers to charged particle and x-ray detection

    SciTech Connect

    Perez-Mendez, V.; Cho, G.; Fujieda, I.; Kaplan, S.N.; Qureshi, S.; Street, R.A.

    1989-04-01

    We outline the characteristics of thick hydrogenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and ..gamma..-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented. 17 refs., 12 figs., 2 tabs.

  10. High-rate deposition of hydrogenated amorphous silicon films and devices

    SciTech Connect

    Luft, W.

    1987-04-01

    This report summarizes the status of high-rate deposition technologies associated with amorphous silicon thin films for photovoltaic applications. The report lists (1) deposition rates for a-Si:H films according to source and method and (2) efficiencies and other parameters of a-Si:H solar cells. Two main deposition source materials, silane and disilane, are discussed, as well as effects of boron doping. The effects of various deposition parameters on film characteristics and on deposition rate are presented, as well as the effects of annealing on high-deposition-rate films. Light-induced effects are also discussed. Finally, progress and problems in this field of study are summarized.

  11. Growth mechanisms and characterization of hydrogenated amorphous- silicon-alloy films

    SciTech Connect

    Gallagher, A.; Ostrom, R.: Stutzin, G.; Tanenbaum, D. )

    1993-02-01

    This report describes an apparatus, constructed and tested, that allows measurement of the surface morphology of as-grown hydrogenated amorphous silicon films with atomic resolution using a scanning tunneling microscope. Surface topologies of 100-[degree][Lambda]-thick intrinsic films, deposited on atomically flat, crystalline Si and GaAs, are reported. These films surfaces are relatively flat on the atomic scale, indicating fairly homogeneous, compact initial film growth. The effect of probe-tip size on the observed topology and the development of atomically sharp probes is discussed. 17 refs, 9 figs.

  12. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    NASA Astrophysics Data System (ADS)

    Mutch, Michael J.; Lenahan, Patrick M.; King, Sean W.

    2016-08-01

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  13. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications.

    PubMed

    García, Héctor; Castán, Helena; Dueñas, Salvador; Bailón, Luis; García-Hernansanz, Rodrigo; Olea, Javier; Del Prado, Álvaro; Mártil, Ignacio

    2016-12-01

    A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice. PMID:27423876

  14. Study of the amorphization of surface silicon layers implanted by low-energy helium ions

    NASA Astrophysics Data System (ADS)

    Lomov, A. A.; Myakon'kikh, A. V.; Oreshko, A. P.; Shemukhin, A. A.

    2016-03-01

    The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2-5)-keV helium ions to a dose of D = 6 × 1015-5 × 1017 cm-2 have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ( z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 1016 cm-2 leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

  15. Si(Li) x-ray detectors with amorphous silicon passivation

    SciTech Connect

    Walton, J.T.; Pehl, R.H.; Wong, Y.K.; Cork, C.P.

    1983-10-01

    Lithium-drifted silicon (Si(Li)) detectors with thin lithium n/sup +/ contacts and amorphous silicon (..cap alpha..-Si) junction passivation are described. These detectors (7 mm thick, 9 cm/sup 2/ area) are intended for use in a six element detector array which is designed to measure trace amounts of plutonium in soil samples. Results are given showing a spectral resolution of approx. 400 eV (FWHM) for the 17.8 keV N/sub p/ L x-rays entering through either these detectors. Measurements on the effects of the fractional H/sub 2/ concentration on the electrical behavior of the ..cap alpha..-Si/Si interface are reported. The increase with time in the lithium window thickness when the detectors are stored at room temperature is discussed.

  16. Near-infrared femtosecond laser-induced crystallization of amorphous silicon

    SciTech Connect

    Shieh, J.-M.; Chen, Z.-H.; Dai, B.-T.; Wang, Y.-C.; Zaitsev, Alexei; Pan, C.-L.

    2004-08-16

    Amorphous silicon (a-Si) was crystallized by femtosecond laser annealing (FLA) using a near-infrared ({lambda}{approx_equal}800 nm) ultrafast Ti:sapphire laser system. The intense ultrashort laser pulses lead to efficient nonlinear photoenergy absorption and the generation of very dense photoexcited plasma in irradiated materials, enabling nonlinear melting on transparent silicon materials. We studied the structural characteristics of recrystallized films and found that FLA assisted by spatial scanning of laser strip spot constitutes superlateral epitaxy that can crystallize a-Si films with largest grains of {approx}800 nm, requiring laser fluence as low as {approx}45 mJ/cm{sup 2}, and low laser shots. Moreover, the optimal annealing conditions are observed with a significant laser-fluence window ({approx}30%)

  17. The effects of radiation and annealing on amorphous silicon solar cell space arrays

    SciTech Connect

    Vendura, G.J. Jr.; Kruer, M.A.; Kurland, R.M.; Newton, J.

    1994-12-31

    This study centers on an ongoing effort to develop large area amorphous silicon ({alpha}-Si) solar cells for space applications. Such units are presently routinely commercially mass produced for terrestrial use. Of major importance, however, is their behavior in radiation environments. Compared to conventional crystalline cells, {alpha}-Si devices have the advantages of being very low cost, large area ({ge} 12 x 13 inches), extremely thin (2{micro}), of minimal weight, flexible and monolithically interconnectable. Although these cells currently have considerable lower AMO beginning of life (BOL) efficiencies compared to crystalline silicon and gallium arsenide on germanium (GaAs/Ge) space cells--approximately 10% versus 13.5% and 18.2% respectively--the key consideration centers upon end of life (EOL) power which, in turn, is dependent upon a mission having a specific radiation environment.

  18. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    García, Héctor; Castán, Helena; Dueñas, Salvador; Bailón, Luis; García-Hernansanz, Rodrigo; Olea, Javier; del Prado, Álvaro; Mártil, Ignacio

    2016-07-01

    A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice.

  19. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    SciTech Connect

    Wan, Yimao; Thomson, Andrew F.; Cuevas, Andres; McIntosh, Keith R.

    2015-01-26

    Recombination at silicon nitride (SiN{sub x}) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH{sub 3}) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH{sub 3} plasma exposure causes (i) an increase in the density of Si≡N{sub 3} groups in both SiN{sub x} and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiN{sub x}/c-Si interface, and (iv) a reduction in the density of positive charge in SiN{sub x}. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiN{sub x} or a-Si. It is therefore important for device performance to minimize NH{sub 3} plasma exposure of SiN{sub x} or a-Si passivating films during subsequent fabrication steps.

  20. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  1. Enhanced amorphous silicon technology for 320 x 240 microbolometer arrays with a pitch of 35 μm

    NASA Astrophysics Data System (ADS)

    Mottin, Eric; Martin, Jean-Luc; Ouvrier-Buffet, Jean-Louis; Vilain, Michel; Bain, Astrid; Yon, Jean-Jacques; Tissot, Jean-Luc; Chatard, Jean-Pierre

    2001-10-01

    LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development for years. This technology is now in production at Sofradir and first delivery have already been done to customers. From our background in modeling and material mastering LETI/LIR concentrate now on performance enhancement. This is a key point for cost reduction due to the fact that signal to noise ratio enhancement will allow us to decrease the pitch. A new approach of packaging is also described in this paper and first results are displayed. A new technological stack of amorphous silicon fully compatible with industrial process is presented. Electro-optical results obtained from an IRCMOS 320 X 240 with 35 μm pitch are presented. NETD close to 35 mK has been obtained with our new embodiment of amorphous silicon microbolometer technology.

  2. Performance and Modeling of Amorphous Silicon Photovoltaics for Building-Integrated Applications (Preprint prepared for Solar 99)

    SciTech Connect

    Kroposki, B.; Hansen, R.

    1998-06-07

    Amorphous silicon photovoltaic (PV) modules offer several advantages for building-integrated applications. The material can be deposited on glass or flexible substrates, which allows for products like roofing shingles and integrated PV/building glass. The material also has a uniform surface, which is ideal for many architectural applications. Amorphous silicon modules perform well in warm weather and have a small temperature coefficient for power. Depending on the building load, this may be beneficial when compared to crystalline systems. At the National Renewable Energy Laboratory, we are monitoring the performance of a triple-junction a-Si system. The system consists of 72 roofing shingles mounted directly to simulated roofing structures. This paper examines the performance of the building-integrated amorphous silicon PV system and applicability for covering residential loads. A simple model of system performance is also developed and is presented.

  3. Light management and efficient carrier generation with a highly transparent window layer for a multijunction amorphous silicon solar cell

    NASA Astrophysics Data System (ADS)

    Iftiquar, Sk Md; Lee, Jeong Chul; Lee, Jieun; Kim, Youngkuk; Jang, Juyeon; Lee, Yeun-Jung; Yi, Junsin

    2013-01-01

    P-layer of a p-i-n type amorphous silicon solar cell helps in creating a built-in electric field inside the cell; it also contributes to parasitic absorption loss of incident light. Here, we report optimization of these two characteristic contributions of the p-layer of the cell. We used a highly transparent p-type hydrogenated amorphous silicon carbide (p-a-Si1-xCx:H) window layer in an amorphous silicon solar cell. With the increased transparency of the p-type layer, the solar cell showed an improvement in short-circuit current density by 17%, along with improvement in blue response of its external quantum efficiency, although further thinner p-layer showed lower open-circuit voltage. Such a cell shows low light-induced degradation and a promise to be used in high-efficiency multijunction solar cell.

  4. Ion-beam sputtered amorphous silicon films for cryogenic precision measurement systems

    NASA Astrophysics Data System (ADS)

    Murray, Peter G.; Martin, Iain W.; Craig, Kieran; Hough, James; Robie, Raymond; Rowan, Sheila; Abernathy, Matt R.; Pershing, Teal; Penn, Steven

    2015-09-01

    Thermal noise resulting from the mechanical loss of multilayer dielectric coatings is expected to impose a limit to the sensitivities of precision measurement systems used in fundamental and applied science. In the case of gravitational wave astronomy, future interferometric gravitational wave detectors are likely to operate at cryogenic temperatures to reduce such thermal noise and ameliorate thermal loading effects, with the desirable thermomechanical properties of silicon making it an attractive mirror substrate choice for this purpose. For use in such a precision instrument, appropriate coatings of low thermal noise are essential. Amorphous silicon (a -Si ) deposited by e-beam and other techniques has been shown to have low mechanical loss. However, to date, the levels of mechanical and optical loss for a -Si when deposited by ion-beam sputtering (the technique required to produce amorphous mirrors of the specification for gravitational wave detector mirrors) are unknown. In this paper results from measurements of the mechanical loss of a series of IBS a -Si films are presented which show that reductions are possible in coating thermal noise of a factor of 1.5 at 120 K and 2.1 at 20 K over the current best IBS coatings (alternating stacks of silica and titania-doped tantala), with further reductions feasible under appropriate heat treatments.

  5. Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1991-01-01

    An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

  6. Achieving thermography with a thermal security camera using uncooled amorphous silicon microbolometer image sensors

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Wei; Tesdahl, Curtis; Owens, Jim; Dorn, David

    2012-06-01

    Advancements in uncooled microbolometer technology over the last several years have opened up many commercial applications which had been previously cost prohibitive. Thermal technology is no longer limited to the military and government market segments. One type of thermal sensor with low NETD which is available in the commercial market segment is the uncooled amorphous silicon (α-Si) microbolometer image sensor. Typical thermal security cameras focus on providing the best image quality by auto tonemaping (contrast enhancing) the image, which provides the best contrast depending on the temperature range of the scene. While this may provide enough information to detect objects and activities, there are further benefits of being able to estimate the actual object temperatures in a scene. This thermographic ability can provide functionality beyond typical security cameras by being able to monitor processes. Example applications of thermography[2] with thermal camera include: monitoring electrical circuits, industrial machinery, building thermal leaks, oil/gas pipelines, power substations, etc...[3][5] This paper discusses the methodology of estimating object temperatures by characterizing/calibrating different components inside a thermal camera utilizing an uncooled amorphous silicon microbolometer image sensor. Plots of system performance across camera operating temperatures will be shown.

  7. Amorphous silicon pixel layers with cesium iodide converters for medical radiography

    SciTech Connect

    Jing, T.; Cho, G.; Goodman, C.A.

    1993-11-01

    We describe the properties of evaporated layers of Cesium Iodide (Thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220{mu}m. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1--0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200--300C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately l{mu}m thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less then 50{mu}m. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on pattered substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level.

  8. Solid state photochemistry. Subpanel A-2(b): Metastability in hydrogenated amorphous silicon

    SciTech Connect

    Carlson, D.

    1996-09-01

    All device quality amorphous silicon based materials exhibit degradation in electronic properties when exposed to sunlight. The photo-induced defects are associated with Si dangling bonds that are created by the recombination and/or trapping of photogenerated carriers. The defects are metastable and can be annealed out at temperatures of about 150 to 200 degrees Centigrade. The density of metastable defects is larger in films that are contaminated with > 10{sup 19} per cubic cm of impurities such as oxygen, carbon and nitrogen. However, recent experimental results indicate that some metastable defects are still present in films with very low impurity concentrations. The photo-induced defects typically saturate after 100 to 1000 hours of exposure to one sun illumination depending on the deposition conditions. There is also experimental evidence that photo-induced structural changes are occurring in the amorphous silicon based materials and that hydrogen may be playing an important role in both the photo-induced structural changes and in the creation of metastable defects.

  9. Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon

    PubMed Central

    Franco, Andrea; Geissbühler, Jonas; Wyrsch, Nicolas; Ballif, Christophe

    2014-01-01

    Microchannel plates are vacuum-based electron multipliers for particle—in particular, photon— detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80–120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200°C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process. PMID:24698955

  10. Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires

    PubMed Central

    2011-01-01

    Large amounts of amorphous silicon oxynitride nanowires have been synthesized on silicon wafer through carbon-assisted vapor-solid growth avoiding the contamination from metallic catalysts. These nanowires have the length of up to 100 μm, with a diameter ranging from 50 to 150 nm. Around 3-nm-sized nanostructures are observed to be homogeneously distributed within a nanowire cross-section matrix. The unique configuration might determine the growth of ternary amorphous structure and its special splitting behavior. Optical properties of the nanowires have also been investigated. The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance. These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle. Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively. PMID:21787429

  11. High performance uncooled amorphous silicon VGA IRFPA with 17-µm pixel-pitch

    NASA Astrophysics Data System (ADS)

    Tissot, J. L.; Durand, A.; Garret, Th.; Minassian, C.; Robert, P.; Tinnes, S.; Vilain, M.

    2010-04-01

    The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop VGA IRFPA formats with 17μm pixel-pitch to build up the currently available product catalog. This detector keeps all the innovations developed on the 25 μm pixel-pitch ROIC (detector configuration by serial link, low power consumption and wide electrical dynamic range). The specific appeal of this unit lies in the high spatial resolution it provides. The reduction of the pixel-pitch turns this TEC-less VGA array into a product well adapted for high resolution and compact systems. In the last part of the paper, we will look more closely at the high electro-optical performances of this IRFPA and the rapid performance enhancement. We will insist on NETD trade-off with wide thermal dynamic range, as well as the high characteristics uniformity, achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design. This technology node paves the way to high end products as well as low end compact smaller formats like 160 x 120 or smaller.

  12. Amorphous silicon research: Phase II. Annual technical progress report, August 1, 1995--July 31, 1996

    SciTech Connect

    Guha, S

    1996-10-01

    This report describes the research performed during Phase II of a three-phase, three-year program under NREL Subcontract No. ZAN-4-13318-02. The research program is intended to expand, enhance and accelerate knowledge and capabilities for the development of high-performance, two-terminal multijunction hydrogenated amorphous silicon (a-Si:H) alloy modules. It is now well recognized that a multifunction, multibandgap approach has the potential of achieving the highest stable efficiency in a-Si:H alloy solar cells. In this approach, the bandgap of the materials of the component cell is varied in order to capture a wide spectrum of the solar photons. Significant progress has been made in the development of materials and cell design in the last few years, and a stable module efficiency of 10.2% has been demonstrated over one-square-foot area using a triple-junction approach in which the bottom two component cells use hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy. In order to meet the Department of Energy goal of achievement of 12% stable module efficiency, it is necessary to make further improvements in each of the component cells. This has been the thrust of the current program.

  13. Label-free photonic biosensors fabricated with low-loss hydrogenated amorphous silicon resonators

    NASA Astrophysics Data System (ADS)

    Lipka, Timo; Wahn, Lennart; Trieu, Hoc Khiem; Hilterhaus, Lutz; Müller, Jörg

    2013-01-01

    The precise detection of chemicals and biomolecules is of great interest in the areas of biotechnology and medical diagnostics. Thus, there is a need for highly sensitive, small area, and low-cost sensors. We fabricated and optically characterized hydrogenated amorphous silicon photonic resonators for label-free lab-on-chip biosensors. The sensing was performed with small-footprint microdisk and microring resonators that detect a refractive-index change via the evanescent electric field. Homogeneous sensing with NaCl and surface-sensing experiments with immobilized bovine serum albumin (BSA) were carried out. A sensitivity as high as 460 nm/RIU was measured for NaCl dissolved in deionized water for the disk, whereas about 50 nm/RIU was determined for the ring resonator. The intrinsic limits of detection were calculated to be 3.3×10 and 3.2×10 at 1550-nm wavelength. We measured the binding of BSA to functionalized ring resonators and found that molecular masses can be detected down to the clinically relevant femtogram regime. The detection and quantification of related analytes with hydrogenated amorphous silicon photonic sensors can be used in medical healthcare diagnostics like point-of-care-testing and biotechnological screening.

  14. Comparative Study of Low-temperature PECVD of Amorphous Silicon using Mono-, Di-, Trisilane and Cyclohexasilane

    SciTech Connect

    Konstantin Pokhodnya; Joseph Sandstrom; Xuliang Dai; Philip Boudjouk; Douglas L. Schulz

    2009-06-08

    The hydrogenated amorphous silicon a-Si:H films were grown by plasma-enhanced chemical vapor deposition (PECVD) using liquid cyclohexasilane Si{sub 6}H{sub 12} (CHS). The growth rate of a-Si:H was studied as a function of substrate temperatures in the range of 30 C < T < 450 C using deposition conditions that were optimized for monosilane SiH{sub 4}. The same parameters were used for a-Si:H films grown using disilane (Si{sub 2}H{sub 6}) and trisilane (Si{sub 3}H{sub 8}) precursors. It was found that the a-Si:H film growth rate for CHS is lower with respect to those for mono-, di- and trisilane in an Ar plasma. Addition of {approx}10% of H{sub 2} dramatically increases the deposition rate for CHS-based films to {_}nm/min - a 700% increase. The as-deposited films were characterized by FTIR and Raman spectroscopy to probe the hydrogen content and local bonding environment. It was found that the films grown using Ar/H{sub 2} mixtures as carrier gas have a reduced hydrogen content relative to polysilane fragments indicating higher quality amorphous silicon.

  15. Wavelength prediction of laser incident on amorphous silicon detector by neural network

    NASA Astrophysics Data System (ADS)

    Esmaeili Sani, V.; Moussavi-Zarandi, A.; Kafaee, M.

    2011-10-01

    In this paper we present a method based on artificial neural networks (ANN) and the use of only one amorphous semiconductor detector to predict the wavelength of incident laser. Amorphous semiconductors and especially amorphous hydrogenated silicon, a-Si:H, are now widely used in many electronic devices, such as solar cells, many types of position sensitive detectors and X-ray imagers for medical applications. In order to study the electrical properties and detection characteristics of thin films of a-Si:H, n-i-p structures have been simulated by SILVACO software. The basic electronic properties of most of the materials used are known, but device modeling depends on a large number of parameters that are not all well known. In addition, the relationship between the shape of the induced anode current and the wavelength of the incident laser leads to complicated calculations. Soft data-based computational methods can model multidimensional non-linear processes and represent the complex input-output relation between the form of the output signal and the wavelength of incident laser.

  16. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    NASA Technical Reports Server (NTRS)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  17. Study of Photoluminescence from Amorphous and Crystalline Silicon Nanoparticles Synthesized using a Non-Thermal Plasma

    NASA Astrophysics Data System (ADS)

    Garg, Prateek

    High photoluminescence (PL) quantum yields reported from amorphous (a-Si) and crystalline (c-Si) nanoparticles have opened up lots of possibilities for use of silicon in optical applications such as light emitting diodes (LEDs), photonics and solar cells with added processing and cost benefits. However, the PL response and the mechanisms behind it are highly dependent on the matrix in which the nanoparticles are grown and on the growth method. While, the bottom-up approach for deposition of free standing nanoparticles seem to be perfectly suited for large area deposition for LED and solar cell applications, the dominant growth techniques (laser ablation and pyrolysis) have been shown to suffer from limitations in control over size distribution of nanoparticles and the requirement of equipment capable of withstanding high temperature. This led to the exploration of plasma based synthesis methods in this work. Towards this effort, the development and automation of a novel tool "Anny" for synthesis of silicon nanoparticles using non-thermal plasma chamber is reported. These nanoparticles are then accelerated due to choked flow through a nozzle leading to substrate independent deposition. The nanoparticle properties are characterized against precursor gas flow rates and RF power to identify the optimum growth conditions for a stable, continuous deposition. It is found that amorphous nanoparticles offer a wide variety of chamber conditions for growth with a high throughput, stable plasma for continuous, long term operations. The quantum confinement model for crystalline and spatial confinement models for amorphous nanoparticles in our size regime (6-8nm) are suggested for free standing nanoparticles and we report a high PL output from well passivated amorphous nanoparticles. The PL output and its dependence on stability of surface hydrogen passivation is explored using Fourier Transform Infrared spectroscopy (FTIR). It is shown that the amorphous nanoparticles have a

  18. High-energy x-ray diffraction study of pure amorphous silicon

    SciTech Connect

    Laaziri, K.; Kycia, S.; Roorda, S.; Chicoine, M.; Robertson, J.L.; Wang, J.; Moss, S.C.

    1999-11-01

    Medium and high-energy x-ray diffraction has been used to study the atomic structure of pure amorphous Si prepared by MeV Si implantation into crystalline silicon. Both as-implanted and annealed samples were studied. The inelastically scattered x rays were removed by fitting the energy spectrum for the scattered x rays. The atomic scattering factor of silicon, previously known reliably up to 20 {Angstrom}{sup {minus}1}, has been extended to 55 {Angstrom}{sup {minus}1}. The radial distribution function of amorphous Si, before and after annealing, has been determined through an unbiased Fourier transformation of the normalized scattering data. Gaussian fits to the first neighbor peak in these functions shows that scattering data out to at least 40 {Angstrom}{sup {minus}1} is required to reliably determine the radial distribution function. The first-shell coordination number increases from 3.79 to 3.88 upon thermal annealing at 600{degree}C, whereas that of crystalline Si determined from similar measurements on a Si powder analyzed using the same technique is 4.0. Amorphous Si is therefore under coordinated relative to crystalline Si. Noise in the distribution function, caused by statistical variations in the scattering data at high-momentum transfer, has been reduced without affecting the experimental resolution through filtering of the interference function after subtracting the contribution of the first-neighbor peak. The difference induced by thermal annealing in the remainder of the radial distribution functions, thus revealed, is much smaller than previously believed. {copyright} {ital 1999} {ital The American Physical Society}

  19. Reduction of the effect of non-uniform backscatter from an E-type support arm of a Varian a-Si EPID used for dosimetry

    NASA Astrophysics Data System (ADS)

    Rowshanfarzad, Pejman; Sabet, Mahsheed; O'Connor, Daryl J.; Greer, Peter B.

    2010-11-01

    Backscatter from the metallic components in the support arm is one of the sources of inaccuracy in dosimetry with Varian amorphous silicon electronic portal imaging devices (a-Si EPIDs). In this study, the non-uniform arm backscatter is blocked by adding lead sheets between the EPID and an E-type support arm. By comparing the EPID responses on and off the arm, with and without lead and considering the extra weight on the imager, 2 mm of lead was determined as the optimum thickness for both 6 and 18 MV beam energies. The arm backscatter at the central axis with the 2 mm lead in place decreased to 0.1% and 0.2% for the largest field size of 30 × 30 cm2 using 6 and 18 MV beams, from 2.3% and 1.3% without lead. Changes in the source-to-detector distance (SDD) did not affect the backscatter component more than 1%. The symmetry of the in-plane profiles improved for all field sizes for both beam energies. The addition of lead decreased the contrast-to-noise ratio and resolution by 1.3% and 0.84% for images taken in 6 MV and by 0.5% and 0.38% for those in 18 MV beams. The displacement of the EPID central pixel was measured during a 360° gantry rotation with and without lead which was 1 pixel different. While the backscatter reduces with increasing lead thickness, a 2 mm lead sheet seems sufficient for acceptable dosimetry results without any major degradation to the routine performance of the imager. No increase in patient skin dose was detected.

  20. Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film

    DOEpatents

    Carlson, David E.

    1980-01-01

    The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.

  1. The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

    NASA Astrophysics Data System (ADS)

    Wen, Guozhi; Zeng, Xiangbin; Li, Xianghu

    2016-05-01

    Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 × 1012 cm-2 and 3.2 × 1012 cm-2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.

  2. The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

    NASA Astrophysics Data System (ADS)

    Wen, Guozhi; Zeng, Xiangbin; Li, Xianghu

    2016-08-01

    Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 × 1012 cm-2 and 3.2 × 1012 cm-2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.

  3. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    SciTech Connect

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-10-01

    Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.

  4. Local structure reconstruction in hydrogenated amorphous silicon from angular correlation and synchrotron diffraction studies

    NASA Astrophysics Data System (ADS)

    Britton, D. T.; Minani, E.; Knoesen, D.; Schut, H.; Eijt, S. W. H.; Furlan, F.; Giles, C.; Härting, M.

    2006-02-01

    Hydrogenated amorphous silicon (a-Si:H) is a widely used thin film semiconductor material which is still incompletely understood. It is generally assumed to form a continuous random network, with a high concentration of coordination defects (dangling bonds), which are hydrogen terminated. Neither the exact nature of these sites nor the degree of medium range order has been fully determined. In this paper, we present the first results for the local structure, from a combined study using angular correlation of positron annihilation radiation (ACAR) and synchrotron radiation diffraction. Reciprocal space information is obtained directly, for the mesoscale structure and the local defect structure, from the orientation dependent diffraction and 2D-ACAR patterns, respectively. Furthermore, inversion of both patterns yields a comparison of real space information through maps of the silicon-silicon pair correlation function and the electron-positron autocorrelation function B2 γ( r). From this information, it is possible to identify the dominant structural defect as a vacancy-size dangling bond cluster, around which the network strain is fully relaxed.

  5. Synthesis of amorphous silicon carbide nanoparticles in a low temperature low pressure plasma reactor.

    PubMed

    Lin, Hongfei; Gerbec, Jeffrey A; Sushchikh, Michael; McFarland, Eric W

    2008-08-13

    Commercial scale production of silicon carbide (SiC) nanoparticles smaller than 10 nm remains a significant challenge. In this paper, a microwave plasma reactor and appropriate reaction conditions have been developed for the synthesis of amorphous SiC nanoparticles. This continuous gas phase process is amenable to large scale production use and utilizes the decomposition of tetramethylsilane (TMS) for both the silicon and the carbon source. The influence of synthesis parameters on the product characteristics was investigated. The as-prepared SiC particles with sizes between 4 and 6 nm were obtained from the TMS precursor in a plasma operated at low temperature and low precursor partial pressure (0.001-0.02 Torr) using argon as the carrier gas (3 Torr). The carbon:silicon ratio was tuned by the addition of hydrogen and characterized by x-ray photoelectron spectroscopy. The reaction mechanism of SiC nanoparticle formation in the microwave plasma was investigated by mass spectroscopy of the gaseous products. PMID:21828814

  6. Plasma deposition of amorphous silicon carbide thin films irradiated with neutrons

    NASA Astrophysics Data System (ADS)

    Huran, J.; Bohacek, P.; Kucera, M.; Kleinova, A.; Sasinkova, V.; IEE SAS, Bratislava, Slovakia Team; Polymer Institute, SAS, Bratislava, Slovakia Team; Institute of Chemistry, SAS, Bratislava, Slovakia Team

    2015-09-01

    Amorphous silicon carbide and N-doped silicon carbide thin films were deposited on P-type Si(100) wafer by plasma enhanced chemical vapor deposition (PECVD) technology using silane, methane, ammonium and argon gases. The concentration of elements in the films was determined by RBS and ERDA method. Chemical compositions were analyzed by FTIR spectroscopy. Photoluminescence properties were studied by photoluminescence spectroscopy (PL). Irradiation of samples with various neutron fluencies was performed at room temperature. The films contain silicon, carbon, hydrogen, nitrogen and small amount of oxygen. From the IR spectra, the films contained Si-C, Si-H, C-H, Si-N, N-H and Si-O bonds. No significance effect on the IR spectra after neutron irradiation was observed. PL spectroscopy results of films showed decreasing PL intensity after neutron irradiation and PL intensity decreased with increased neutron fluencies. The measured current of the prepared structures increased after irradiation with neutrons and rise up with neutron fluencies.

  7. Reliability and stability of thin-film amorphous silicon MEMS resonators

    NASA Astrophysics Data System (ADS)

    Sousa, P. M.; Chu, V.; Conde, J. P.

    2012-06-01

    The stability of the resonance frequency (fres) characteristics of MEMS resonators upon long-term cycling is crucial for many applications. Thin-film silicon MEMS have been developed to take advantage of their low-temperature processing and large area deposition characteristics. A reliability and stability study of thin-film-doped hydrogenated amorphous silicon (n+-a-Si:H)-aluminum MEMS resonators fabricated on glass substrates at a maximum processing temperature of 110 °C is presented. Long-term cycling of thin-film silicon microbridge resonators with different top electrode configurations was performed in vacuum and in air using electrostatic actuation. The number of cycles to failure, the fres stability, the quality factor (Q) stability and the effect of measurement temperature are studied. The resonant bridges withstand the industry standard of 1011 continuous cycles at high load with no failure reported both in vacuum and air with fres shifts which depend on the resonator top electrode configuration. No Q degradation was observed. Frequency stability better than ±20 ppm was observed in vacuum after long-term cycling.

  8. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    SciTech Connect

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  9. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    NASA Astrophysics Data System (ADS)

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  10. Electroless chemical grafting of nitrophenyl groups on n-doped hydrogenated amorphous silicon surfaces.

    PubMed

    Kim, Chulki; Oh, Kiwon; Han, Seunghee; Kim, Kyungkon; Kim, Il Won; Kim, Heesuk

    2014-08-01

    The direct spontaneous grafting of 4-nitrophenyl molecules onto n-doped hydrogenated amorphous silicon (a-Si:H) surfaces without external ultraviolet, thermal, or electrochemical energy was invegtigated. Clean n-doped a-Si:H thin films were dipped in a solution of 4-nitrobenzenediazonium salts (PNBD) in acetonitrile. After the modified surfaces were rinsed, they were analyzed qualitatively and quantitatively by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). XPS and AFM results show that the reaction of an n-doped a-Si:H thin film with PNBD self-terminates without polymerization, after 5 h, and the surface number density of 4-nitrophenyl molecules is 4.2 x 10(15)/cm2. These results demonstrate that the spontaneous grafting of nitrophenyl layers onto n-doped a-Si:H thin films is an attractive pathway toward forming interfaces between a-Si:H and organic layers under ambient conditions. PMID:25936109

  11. Amorphous/microcrystalline transition of thick silicon film deposited by PECVD

    NASA Astrophysics Data System (ADS)

    Elarbi, N.; Jemaï, R.; Outzourhit, A.; Khirouni, K.

    2016-06-01

    Thick silicon films were deposited by plasma-enhanced chemical vapor deposition at different plasma power densities. Annealing treatment was performed on these deposited films. As-deposited and annealed films were characterized by X-ray diffraction, Raman scattering spectroscopy and reflectance spectroscopy. Before annealing, only the film deposited at the plasma power density of 500 mW/cm2 exhibits a diffraction peak corresponding to the (111) plane orientation. Raman spectrum of this film confirms the presence of crystalline phase. After annealing, a transition from amorphous phase to crystalline one occurs for all samples. This transition is accompanied by an increase of the crystalline fraction volume deduced from Raman spectra analysis and by a reduction of optical gap energy.

  12. Hydrogen reverses the clustering tendency of carbon in amorphous silicon oxycarbide.

    PubMed

    Ding, Hepeng; Demkowicz, Michael J

    2015-01-01

    Amorphous silicon oxycarbide (SiOC) is of great technological interest. However, its atomic-level structure is not well understood. Using density functional theory calculations, we show that the clustering tendency of C atoms in SiOC is extremely sensitive to hydrogen (H): without H, the C-C interaction is attractive, leading to enrichment of aggregated SiC4 tetrahedral units; with hydrogen, the C-C interaction is repulsive, leading to enrichment of randomly distributed SiCO3 tetrahedral units. Our results suggest that conflicting experimental characterizations of C distributions may be due to differing amounts of H present in the samples investigated. Our work also opens a path for tailoring the properties of SiOC by using the total H content to control the C distribution. PMID:26269200

  13. Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide.

    PubMed

    El-Sayed, Al-Moatasem; Watkins, Matthew B; Grasser, Tibor; Afanas'ev, Valery V; Shluger, Alexander L

    2015-03-20

    Using ab initio modeling we demonstrate that H atoms can break strained Si─O bonds in continuous amorphous silicon dioxide (a-SiO(2)) networks, resulting in a new defect consisting of a threefold-coordinated Si atom with an unpaired electron facing a hydroxyl group, adding to the density of dangling bond defects, such as E' centers. The energy barriers to form this defect from interstitial H atoms range between 0.5 and 1.3 eV. This discovery of unexpected reactivity of atomic hydrogen may have significant implications for our understanding of processes in silica glass and nanoscaled silica, e.g., in porous low-permittivity insulators, and strained variants of a-SiO(2). PMID:25839289

  14. Analytical energy-barrier-dependent Voc model for amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Castro-Carranza, A.; Nolasco, J. C.; Reininghaus, N.; Geißendörfer, S.; Vehse, M.; Parisi, J.; Gutowski, J.; Voss, T.

    2016-07-01

    We show that the open circuit voltage (Voc) in hydrogenated amorphous silicon (a-Si:H) solar cells can be described by an analytical energy-barrier-dependent equation, considering thermionic emission as the physical mechanism determining the recombination current. For this purpose, the current-voltage characteristics of two device structures, i.e., a-Si:H(n)/a-Si:H(i)/a-Si:H(p)/AZO p-i-n solar cells with different p-doping concentrations and a-Si:H(n)/a-Si:H(i)/AZO Schottky structures with different intrinsic layer thicknesses, were analyzed in dark and under illumination, respectively. The calculated barrier in the p-i-n devices is consistent with the difference between the work function of the p-layer and the conduction band edge of the i-layer at the interface in thermal equilibrium.

  15. Mapping between atomistic simulations and Eshelby inclusions in the shear deformation of an amorphous silicon model.

    PubMed

    Albaret, T; Tanguy, A; Boioli, F; Rodney, D

    2016-05-01

    In this paper we perform quasistatic shear simulations of model amorphous silicon bulk samples with Stillinger-Weber-type potentials. Local plastic rearrangements identified based on local energy variations are fitted through their displacement fields on collections of Eshelby spherical inclusions, allowing determination of their transformation strain tensors. The latter are then used to quantitatively reproduce atomistic stress-strain curves, in terms of both shear and pressure components. We demonstrate that our methodology is able to capture the plastic behavior predicted by different Stillinger-Weber potentials, in particular, their different shear tension coupling. These calculations justify the decomposition of plasticity into shear transformations used so far in mesoscale models and provide atomic-scale parameters that can be used to limit the empiricism needed in such models up to now. PMID:27300968

  16. Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy

    SciTech Connect

    Mews, Mathias; Mingirulli, Nicola; Korte, Lars; Schulze, Tim F.

    2013-03-25

    The impact of post-deposition hydrogen plasma treatment (HPT) on passivation in amorphous/crystalline silicon (a-Si:H/c-Si) interfaces is investigated. Combining low temperature a-Si:H deposition and successive HPT, a high minority carrier lifetime >8 ms is achieved on c-Si <100>, which is otherwise prone to epitaxial growth and thus inferior passivation. It is shown that the passivation improvement stems from diffusion of hydrogen atoms to the heterointerface and subsequent dangling bond passivation. Concomitantly, the a-Si:H hydrogen density increases, leading to band gap widening and void formation, while the film disorder is not increased. Thus, HPT allows for a-Si:H band gap and a-Si:H/c-Si band offset engineering.

  17. Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing

    SciTech Connect

    Haberl, B.; McKerracher, I.; Ruffell, S.; Williams, J. S.; Bradby, J. E.; Bogle, S. N.; Li, T.; Abelson, J. R.; Munroe, P.

    2011-11-01

    We investigate the structure of magnetron-sputtered (MS) amorphous silicon (a-Si) prepared under standard deposition conditions and compare this to pure ion-implanted (II) a-Si. The structure of both films is characterized in their as-prepared and thermally annealed states. Significant differences are observed in short- and medium-range order following thermal annealing. Whereas II a-Si undergoes structural relaxation toward a continuous random network, MS a-Si exhibits little change. Cross-sectional transmission electron microscopy reveals the presence of nanopores in the MS film consistent with reduced mass-density. Therefore, the short- and medium-range order of annealed, MS a-Si is tentatively attributed to these pores.

  18. Properties of insulator-semiconductor interfaces in amorphous silicon solar cell structures

    NASA Astrophysics Data System (ADS)

    Hasegawa, H.; Hara, T.; Arimoto, S.; Ohno, H.; Sawada, T.

    Properties of amorphous silicon surfaces passivated by anodic and plasma CVD dielectrics are investigated, using MIS structures. Detailed MIS C-V and isothermal capacitance spectroscopy (ICTS) measurements were made. In order to analyze the observed extremely complicated behavior, theoretical MIS C-V curves are calculated on the basis of a rigorous admittance analysis. Contrary to the usual assumption that interface states do not play a major role in a-Si surfaces as compared with the bulk gap states, it is shown for the first time that the electrical characteristics of interfaces are controlled predominantly by the interface states and not by the bulk gap states. Interface states have the tendency to pin the surface Fermi level at 0.4 eV from the conduction band edge.

  19. Theoretical study of light-emission properties of amorphous silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Nishio, Kengo; Kōga, Junichiro; Yamaguchi, Toshio; Yonezawa, Fumiko

    2003-05-01

    In order to clarify the mechanism of the photoluminescence (PL) from amorphous silicon quantum dots (a-Si QDs), we calculate, in the tight-binding scheme, the emission spectra and the radiative recombination rate P of the direct band-to-band recombination process. For a-Si QDs smaller than 2.4 nm in diameter, our calculations beautifully reproduce the peak energy EPL of the experimental PL peak [N.-M. Park et al., Phys. Rev. Lett. 86, 1355 (2001)]. Our analysis also show that (i) the emission energy can be tuned into the visible range of light from red to blue by controlling the sizes of a-Si QDs, and that (ii) P calculated for a-Si QDs is higher by two to three orders of magnitude than that for crystalline Si QDs. From these results, we assert that a-Si QDs are promising candidates for visible, tunable, and high-performance light-emitting devices.

  20. Deposited amorphous silicon-on-insulator technology for nano-photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Kumar Selvaraja, Shankar; Schaekers, Marc; Bogaerts, Wim; Van Thourhout, Dries

    2014-02-01

    Low-loss deposited amorphous silicon (α-Si:H) layers for nano-photonic integrated circuit have been prepared using complementary-metal-oxide-semiconductor (CMOS) compatible technology. Waveguide loss as low as 3.45 dB/cm is reported for films deposited at a low temperature (300 °C) using plasma enhanced chemical vapour deposition process. The influence of the deposition parameters such as gas dilution, plasma power and pressure on the quality of the deposited material is thoroughly characterized using Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, X-ray diffraction and atomic force microscopy. We show that the optical quality of the deposited film can be directly assessed from distinct frequency bands (2090, 2000 and 840 cm-1) using FTIR, without the need for further waveguide loss measurements.

  1. High-Sensitivity X-ray Polarimetry with Amorphous Silicon Active-Matrix Pixel Proportional Counters

    NASA Technical Reports Server (NTRS)

    Black, J. K.; Deines-Jones, P.; Jahoda, K.; Ready, S. E.; Street, R. A.

    2003-01-01

    Photoelectric X-ray polarimeters based on pixel micropattern gas detectors (MPGDs) offer order-of-magnitude improvement in sensitivity over more traditional techniques based on X-ray scattering. This new technique places some of the most interesting astronomical observations within reach of even a small, dedicated mission. The most sensitive instrument would be a photoelectric polarimeter at the focus of 2 a very large mirror, such as the planned XEUS. Our efforts are focused on a smaller pathfinder mission, which would achieve its greatest sensitivity with large-area, low-background, collimated polarimeters. We have recently demonstrated a MPGD polarimeter using amorphous silicon thin-film transistor (TFT) readout suitable for the focal plane of an X-ray telescope. All the technologies used in the demonstration polarimeter are scalable to the areas required for a high-sensitivity collimated polarimeter. Leywords: X-ray polarimetry, particle tracking, proportional counter, GEM, pixel readout

  2. Amorphous silicon research Phase I. Annual subcontract report, August 1, 1994--July 31, 1995

    SciTech Connect

    Guha, S.

    1995-10-01

    The Principal objective of this R&D program is to expand, enhance and accelerate knowledge and capabilities for the development of high-performance, two-terminal multifunction hydrogenated amorphous silicon (a-Si:H) alloy modules. The near-term goal of the program is to achieve 12% stable efficiency by 1998 using the multifunction approach. The major effort of this program is to develop high efficiency component cells and incorporate them in the triple-junction structure to obtain the highest stable efficiency. The bulk of the effort was directed toward the middle and bottom cell structure. New and improved deposition regimes were investigated to obtain better cell performance. Fundamental studies to obtain better understanding of material and cell performance were undertaken.

  3. Amorphous silicon research. Phase III technical progress report, August 1, 1996--July 31, 1997

    SciTech Connect

    Guha, S.

    1997-11-01

    The principal objective of this R&D program is to expand, enhance and accelerate knowledge and capabilities for the development of high-performance, two-terminal multijunction hydrogenated amorphous silicon (a-Si) alloy cells and modules. The near-term goal of the program is to achieve 12% stable active-area efficiency using the multijunction approach. The long-term goal is to achieve 15% stable efficiency multijunction modules. The major effort of this program is to develop high efficiency component cells and incorporate them in the triple-junction structure to obtain the highest stable efficiency. New and improved deposition regimes were investigated to obtain better cell performance. Fundamental studies to obtain better understanding of material and cell performance were undertaken.

  4. Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors

    PubMed Central

    Contreras, Javier; Costa, Daniel; Pereira, Sonia; Fortunato, Elvira; Martins, Rodrigo; Wierzbicki, Rafal; Heerlein, Holger; Ferreira, Isabel

    2010-01-01

    The movement of a micro cantilever was detected via a self constructed portable data acquisition prototype system which integrates a linear array of 32 1D amorphous silicon position sensitive detectors (PSD). The system was mounted on a microscope using a metal structure platform and the movement of the 30 μm wide by 400 μm long cantilever was tracked by analyzing the signals acquired by the 32 sensor array electronic readout system and the relevant data algorithm. The obtained results show a linear behavior of the photocurrent relating X and Y movement, with a non-linearity of about 3%, a spatial resolution of less than 2 μm along the lateral dimension of the sensor as well as of less than 3 μm along the perpendicular dimension of the sensor, when detecting just the micro-cantilever, and a spatial resolution of less than 1 μm when detecting the holding structure. PMID:22163648

  5. Hydrogen-induced modification of the medium-range structural order in amorphous silicon films

    SciTech Connect

    Nittala, L.N.; Jayaraman, S.; Sperling, B.A.; Abelson, J.R.

    2005-12-12

    We use fluctuation electron microscopy to determine changes in the medium-range structural order of un-hydrogenated amorphous silicon thin films after they are exposed to atomic hydrogen at a substrate temperature of 230 deg. C. The films are deposited by magnetron sputtering at either 230 or 350 deg. C substrate temperature to obtain starting states with small or large initial medium-range order, respectively. The in-diffusion of atomic hydrogen causes the medium-range order to decrease for the small initial order but to increase for the large initial order. We suggest that this behavior can be understood in terms of classical nucleation theory: The ordered regions of small diameter are energetically unstable and can lower their energy by evolving towards a continuous random network, whereas the ordered regions of large diameter are energetically stable and can lower their energy by coarsening towards the nanocrystalline state.

  6. Preparation of superior lubricious amorphous carbon films co-doped by silicon and aluminum

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Yang, Jun; Zheng, Jianyun; Liang, Yongmin; Liu, Weimin

    2011-09-01

    Silicon (Si) and aluminum (Al) co-doped amorphous carbon films ((Si, Al)-C:H) were deposited on Si and stainless steel substrates by radio frequency (13.56 MHz) magnetron sputtering. The Al and Si were found to jointly regulate the hybridized carbon bonds. Mechanical properties of the films were detected by nano-indention and scratch tests. The nano-indention results revealed that all the samples exhibited good elastic recovery rate, among which the highest one was beyond 84%. Besides co-regulating the hybridizations of carbon, the co-doped Si and Al also had a common regulation on the mechanical and tribological properties. Especially, the film containing 1.6 at. % of Si and 0.9 at. % of Al showed a super-low friction (< 0.01) and a superior wear resistance in ambient air.

  7. {sup 1}H NMR electron-nuclear cross relaxation in thin films of hydrogenated amorphous silicon

    SciTech Connect

    Su Tining; Taylor, P. C.; Ganguly, G.; Carlson, D. E.; Bobela, D. C.; Hari, P.

    2007-12-15

    We investigate the spin-lattice relaxation of the dipolar order in {sup 1}H NMR in hydrogenated amorphous silicon (a-Si:H). We find that the relaxation is dominated by the cross relaxation between the hydrogen nuclei and the paramagnetic states. The relaxation is inhomogeneous, and can be described as a stretched exponential function. We proposed a possible mechanism for this relaxation. This mechanism applies to a rather broad range of paramagnetic states, including the deep neutral defects (dangling bonds), the light-induced metastable defects, the defects created by doping, and the singly occupied, localized band-tail states populated by light at low temperatures. The cross relaxation is only sensitive to the bulk spin density, and the surface spins have a negligible effect on the relaxation.

  8. Sputtered amorphous silicon solar cells. Quarterly report No. 2, October 22, 1980-January 22, 1981

    SciTech Connect

    Moustakas, T.D.; Morel, D.L.; Wronski, C.R.

    1981-01-01

    The mechanism of hydrogen incorporation during the film growth was investigated through hydrogen content studies. The data are consistent with a kinetic model of hydrogen incorporation. The hole mobility-lifetime products were measured on a-SiH/sub x//metal Schottky barrier structures with a new method utilizing optical absorption, collection efficiency, and capacitance voltage measurements. The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a-SiH/sub x//Pt) were investigated as a function of hydrogen content. The data are interpreted in terms of hydrogen modification of the valence band edge and interfacial oxide effects. The fabrication by the method of sputtering of P-I-N/ITO solar cell structures is reported. (MHR)

  9. Mapping between atomistic simulations and Eshelby inclusions in the shear deformation of an amorphous silicon model

    NASA Astrophysics Data System (ADS)

    Albaret, T.; Tanguy, A.; Boioli, F.; Rodney, D.

    2016-05-01

    In this paper we perform quasistatic shear simulations of model amorphous silicon bulk samples with Stillinger-Weber-type potentials. Local plastic rearrangements identified based on local energy variations are fitted through their displacement fields on collections of Eshelby spherical inclusions, allowing determination of their transformation strain tensors. The latter are then used to quantitatively reproduce atomistic stress-strain curves, in terms of both shear and pressure components. We demonstrate that our methodology is able to capture the plastic behavior predicted by different Stillinger-Weber potentials, in particular, their different shear tension coupling. These calculations justify the decomposition of plasticity into shear transformations used so far in mesoscale models and provide atomic-scale parameters that can be used to limit the empiricism needed in such models up to now.

  10. Visible Absorption Properties of Retinoic Acid Controlled on Hydrogenated Amorphous Silicon Thin Film

    NASA Astrophysics Data System (ADS)

    Tsujiuchi, Yutaka; Masumoto, Hiroshi; Goto, Takashi

    2008-02-01

    Langmuir-Blodgett (LB) films of retinoic acid and LB films of retinoic acid mixed with a peptide that contains an alanine-lysine-valine (AKV) amino acid sequence deposited on a hydrogenated amorphous silicon (a-Si:H) film prepared by electron cyclotron resonance (ECR) plasma sputtering were fabricated, and their light absorption spectrums were compared. A specific visible light absorption at approximately 500 nm occurred in a film that had a film thickness of more than 80 nm and a hydrogen concentration of more than 20% in the sputtering process gas. Mixing the AKV sequence peptide with retinoic acid caused a 6 nm blueshift, from 363 to 357 nm, of the absorption maximum of the composite LB film on a SiO2 substrate. Using the same peptide, a large 30 nm blueshift, from 500 to 470 nm, was induced in the composite LB film on the a-Si:H film.

  11. Periodic molybdenum disc array for light trapping in amorphous silicon layer

    NASA Astrophysics Data System (ADS)

    Wang, Jiwei; Yang, Kang; Chen, Haiyan; Deng, Changkai; Li, Dongdong; Chen, Xiaoyuan; Ren, Wei

    2016-05-01

    We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO2. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

  12. Advances in amorphous silicon alloy-based multijunction cells and modules

    SciTech Connect

    Guha, S.; Yang, J.; Banerjee, A.; Glatfelter, T.; Xu, X. )

    1992-12-01

    Multijunction amorphous silicon alloy-based solar cells and modules offer the potential of obtaining high efficiency with long-term stability against light-induced degradation. We have studied the stability of the component cells of the multijunction devices prepared under different deposition conditions. We observe a definite correlation between the microstructure of the intrinsic material and initial and light-degraded performance of the cells. Using suitable deposition conditions and optimum matching of the component cells, we have fabricated double-junction dual-bandgap cells which show stabilized active-area efficiency of 11% after 600 hours of one-sun illumination at 50 [degree]C. Double-junction and triple-junction modules of 900 cm[sup 2] area have been fabricated, and the performance of these panels will be discussed.

  13. Enhanced light trapping with double-groove grating in thin-film amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Wu, Jun

    2016-05-01

    A design to enhance light absorption in thin-film amorphous silicon (a-Si) solar cells is proposed. It is achieved by patterning a double-groove grating with waveguide layer as the absorbing layer and coating a double-groove grating anti-reflective layer in the front window of the cell. The broadband absorption under normal incidence can be achieved for both TE and TM polarizations. It is shown that the averaged integrated absorptions have very large angle independence for the optimized solar cell. An qualitative understanding of such broadband enhanced absorption effect, which is attributed to the guided mode resonance, is presented. The conclusions can be exploited to guide the design of solar cells based on a grating structure.

  14. Laser annealing of amorphous/poly: Silicon solar cell material flight experiment

    NASA Technical Reports Server (NTRS)

    Cole, Eric E.

    1990-01-01

    The preliminary design proposed for the microelectronics materials processing equipment is presented. An overall mission profile, description of all processing steps, analysis methods and measurement techniques, data acquisition and storage, and a preview of the experimental hardware are included. The goal of the project is to investigate the viability of material processing of semiconductor microelectronics materials in a micro-gravity environment. The two key processes are examined: (1) Rapid Thermal Annealing (RTA) of semiconductor thin films and damaged solar cells, and (2) thin film deposition using a filament evaporator. The RTA process will be used to obtain higher quality crystalline properties from amorphous/poly-silicon films. RTA methods can also be used to repair radiation-damaged solar cells. On earth this technique is commonly used to anneal semiconductor films after ion-implantation. The damage to the crystal lattice is similar to the defects found in solar cells which have been exposed to high-energy particle bombardment.

  15. Critical oxygen concentration in hydrogenated amorphous silicon solar cells dependent on the contamination source

    SciTech Connect

    Woerdenweber, Jan; Merdzhanova, Tsvetelina; Gordijn, Aad; Stiebig, Helmut; Beyer, Wolfhard

    2010-03-08

    For hydrogenated amorphous silicon (a-Si:H) solar cells, the critical concentration of a given impurity defines the lowest concentration which causes a decay of solar cell efficiency. Values of 2-5x10{sup 19} cm{sup -3} are commonly found for the critical oxygen concentration (C{sub O}{sup crit}) of a-Si:H. Here we report a dependence of C{sub O}{sup crit} on the contamination source. For state-of-the-art a-Si:H solar cells prepared at the same plasma deposition conditions, we obtain with a (controllable) chamber wall leak C{sub O}{sup crit} approx2x10{sup 19} cm{sup -3} while for a leak in the gas supply line a higher C{sub O}{sup crit} of approx2x10{sup 20} cm{sup -3} is measured. No such dependence is observed for nitrogen.

  16. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Theodorakos, I.; Zergioti, I.; Vamvakas, V.; Tsoukalas, D.; Raptis, Y. S.

    2014-01-01

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  17. Structural and Elemental Analysis of Degraded Single Junction Amorphous Silicon Solar Module

    NASA Astrophysics Data System (ADS)

    Osayemwenre, Gilbert; Meyer, Edson

    Photovoltaic solar modules have different defects and degradation characteristic modes. These degradation modes normally heats up some regions in the PV module. Depending on the degree and size of the localised heat, the localized heat can raise above the temperature limit of the module and cause damage to the structural orientation. The presence of severe defect and degradation correlates with high temperature gradients that usually results in morphological damage especially under outdoor conditions. The present study investigates the effect of defect/degradation on the surface morphology of single junction amorphous silicon modules (a-Si:H) during outdoor deployment. The observed structural damage was analysed using scanning electron microscope (SEM) and energy dispersion X-ray (EDX) to ascertain the elemental composition. Results show huge discrepancies in the chemical composition constitute alone different regions. The presence of high concentration of carbon and oxygen was found in the affected region. The authors wish to acknowledge GMRDC and the International affairs for the support.

  18. Intensity dependence of the minority-carrier difusion length in amorphous silicon based alloys

    NASA Astrophysics Data System (ADS)

    Hack, M.; Shur, M.

    1984-04-01

    Many of the recent measurements of the minority-carrier diffusion length (Lp) in amorphous silicon based alloys have been based on a utilization of the surface photovoltage (SPV). In this case an equation relating photon flux and Lp under ideal conditions has to be modified because of the back diffusion of carriers and the effects of high field regions. To account for the high field region, the 'aparent' diffusion length has been determined for varying intensities of bias light. In the present investigation, a theoretical analysis shows that the zero field diffusion length is indeed intensity dependent and that this dependence can be directly related to the slope of the density of states near the valence band edge. The intensity dependence of the minority carrier diffusion length and the energy slope of the density of states near the valence band edge are obtained on the basis of experimental results.

  19. Photon counting pixel and array in amorphous silicon technology for large area digital medical imaging applications

    NASA Astrophysics Data System (ADS)

    Yazdandoost, Mohammad Y.; Shin, Kyung W.; Safavian, Nader; Taghibakhsh, Farhad; Karim, Karim S.

    2010-04-01

    A single photon counting Voltage Controlled Oscillator (VCO) based pixel architecture in amorphous silicon (a-Si) technology is reported for large area digital medical imaging. The VCO converts X-ray generated input charge into an output oscillating frequency signal. Experimental results for an in-house fabricated VCO circuit in a-Si technology are presented and external readout circuits to extract the image information from the VCO's frequency output are discussed. These readout circuits can be optimized to reduce the fixed pattern noise and fringing effects in an imaging array containing many such VCO pixels. Noise estimations, stability simulations and measurements for the fabricated VCO are presented. The reported architecture is particularly promising for large area photon counting applications (e.g. low dose fluoroscopy, dental computed tomography (CT)) due to its very low input referred electronic noise, high sensitivity and ease of fabrication in low cost a-Si technology.

  20. Direct visualization of photoinduced glassy dynamics on the amorphous silicon carbide surface by STM movies

    NASA Astrophysics Data System (ADS)

    Nguyen, Duc; Nienhaus, Lea; Haasch, Richard T.; Lyding, Joseph; Gruebele, Martin

    2015-03-01

    Glassy dynamics can be controlled by light irradiation. Sub- and above-bandgap irradiation cause numerous phenomena in glasses including photorelaxation, photoexpansion, photodarkening and pohtoinduced fluidity. We used scanning tunneling microscopy to study surface glassy dynamics of amorphous silicon carbide irradiated with above- bandgap 532 nm light. Surface clusters of ~ 4-5 glass forming unit in diameter hop mostly in a two-state fashion, both without and with irradiation. Upon irradiation, the average surface hopping activity increases by a factor of 3. A very long (~1 day) movie of individual clusters with varying laser power density provides direct evidence for photoinduced enhanced hopping on the glass surfaces. We propose two mechanisms: heating and electronic for the photoenhanced surface dynamics.

  1. Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

    NASA Astrophysics Data System (ADS)

    Dinh, Toan; Viet Dao, Dzung; Phan, Hoang-Phuong; Wang, Li; Qamar, Afzaal; Nguyen, Nam-Trung; Tanner, Philip; Rybachuk, Maksym

    2015-06-01

    We report on the temperature dependence of the charge transport and activation energy of amorphous silicon carbide (a-SiC) thin films grown on quartz by low-pressure chemical vapor deposition. The electrical conductivity as characterized by the Arrhenius rule was found to vary distinctly under two activation energy thresholds of 150 and 205 meV, corresponding to temperature ranges of 300 to 450 K and 450 to 580 K, respectively. The a-SiC/quartz system displayed a high temperature coefficient of resistance ranging from -4,000 to -16,000 ppm/K, demonstrating a strong feasibility of using this material for highly sensitive thermal sensing applications.

  2. Risk assessment of amorphous silicon dioxide nanoparticles in a glass cleaner formulation

    PubMed Central

    Scheel, Julia; Karsten, Stefan; Stelter, Norbert; Wind, Thorsten

    2013-01-01

    Since nanomaterials are a heterogeneous group of substances used in various applications, risk assessment needs to be done on a case-by-case basis. Here the authors assess the risk (hazard and exposure) of a glass cleaner with synthetic amorphous silicon dioxide (SAS) nanoparticles during production and consumer use (spray application). As the colloidal material used is similar to previously investigated SAS, the hazard profile was considered to be comparable. Overall, SAS has a low toxicity. Worker exposure was analysed to be well controlled. The particle size distribution indicated that the aerosol droplets were in a size range not expected to reach the alveoli. Predictive modelling was used to approximate external exposure concentrations. Consumer and environmental exposure were estimated conservatively and were not of concern. It was concluded based on the available weight-of-evidence that the production and application of the glass cleaner is safe for humans and the environment under intended use conditions. PMID:22548260

  3. Plasma-assisted CVD of fluorinated, hydrogenated amorphous silicon. Final report

    SciTech Connect

    Coleman, J.H.; Hammes, J.P.; Wiesmann, H.J.

    1981-01-01

    During the past year, three novel large-area (100 cm/sup 2/) a-Si:H solar cells were developed with the following configurations: inverted NIP/SS cells with an improved red response; inverted a-Si:H/a-B:H heterojunction cells with high V/sub oc/; and NIP/metal cells with a CVD P-layer grown pyrolytically from silane and diborane. Initial experiments were performed using disilane as the deposition gas for the intrinsic layer in both NIP/SS and PIN/SS structures. Coatings of In/sub 2/O/sub 3/, using a technique developed by Dr. Ovadyahu, were applied to NIP/SS cells in order to evaluate its potential as a conductive coating in practical amorphous silicon solar cells.

  4. High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane

    SciTech Connect

    Kenne, J.; Ohashi, Y.; Matsushita, T.; Konagai, M.; Takahashi, K.

    1984-01-15

    The optical and electrical properties of hydrogenated amorphous silicon films produced by rf glow discharge decomposition of disilane diluted in helium (Si/sub 2/H/sub 6//He = 1/9) have been studied while systematically varying the film deposition rate. The properties and composition of the films were monitored by measuring the optical band gap, IR vibrational spectrum, dark conductivity, and the photoconductivity as a function of the deposition rate. The photoluminescence of the high deposition rate films gave a peak at 1.33 eV. These films, whose properties are rather similar to those of the conventional a-Si:H films prepared from monosilane, have been used to fabricate nip-type a-Si:H solar cells. At a deposition rate of 11 A/sec, a conversion efficiency of 6.86% was obtained. This high efficiency shows that disilane is applicable for mass production fabrication of a-Si:H solar cells.

  5. Local Moments and Localized Conduction Electrons in Amorphous Gadolinium-Silicon

    NASA Astrophysics Data System (ADS)

    Zink, B. L.; Queen, D. R.; Sappey, R.; Revaz, B.; Janod, E.; Potok, R. M.; Hellman, F.

    2000-03-01

    Investigations of amorphous gadolinium-silicon have revealed many fascinating phenomena including enormous negative magnetoresistance and spin glass behavior that give insight into magnetic interactions near a Metal-Insulator transition(F. Hellman et al., PRL 77, 4652 (1996))^,(P. Xiong et al., PRB 59, R3929 (1999))^,(F. Hellman et al., submitted to PRL). The heat capacities of a-GdSi thin-films measured with our unique microcalorimeter show large magnetic contributions at temperatures below 40 K. The resulting magnetic entropy is larger than that available from Gd moments alone. We suggest that this additional entropy is provided by the interaction of localized electron spins with the Gd moments(B. L. Zink et al., PRL 83, 2266 (1999)). New heat capacity data on samples with different compositions, at temperatures below the spin glass freezing temperature and in large magnetic fields provides further insight into these dramatic phenomena and the magnetic interactions that cause them.

  6. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    SciTech Connect

    Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

    1994-10-01

    We describe the characteristics of thin (1 {mu}m) and thick (>30 {mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and {gamma} rays. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed.

  7. Uncooled amorphous silicon IRFPA for high performance and high volume applications

    NASA Astrophysics Data System (ADS)

    Pochic, D.; Durand, A.; Tissot, J. L.; Crastes, A.; Vilain, M.; Legras, O.; Tinnes, S.; Minassian, C.; Robert, P.

    2009-09-01

    For more than 10 years now, uncooled sensors have given new opportunities in the IR field of applications by being able to be produce in large volume. Compared to cooled technology, uncooled detectors offer many interesting advantages: high reliability, lower cost ... whereas the performance is high enough for a lot of applications. Thermography, building inspection, enhanced driver vision and military (thermal weapon sight, low altitude UAV sensor) are applications which can be provided with affordable IR focal plane arrays... As uncooled IR sensors are mainly dedicated to these high volume applications, any uncooled IRFPA technology has to be able to provide high performance sensors but also to be producible in large volume at a minimum cost. The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon layer enables ULIS to develop a full range of IRFPA formats from 160x120 to 1024x768 pixels with 25μm and 17μm pixel-pitch, designed for high end and high volume applications. The detector ROIC designs rely on a simple architecture (detector configuration addressed by a serial link for user defined amplifier gain, windowing capability...) which enables easier systems upgrade and therefore a reduced system development non recurrent cost. The packaging technique depends on the application environment and the production volume in order to fit with the market expectation. Starting from metallic and ceramics package, very advanced new technique is under development in order to reduce uncooled IRFPA production cost. NETD in the range of 30mK (f/1, 300K, 60Hz) as well as operability higher than 99.99%, are routinely achieved with amorphous silicon technology.

  8. Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules

    SciTech Connect

    Delahoy, A.E.; Tonon, T.; Macneil, J. )

    1991-06-01

    The primary objective of this subcontract is to develop the technology for same bandgap, amorphous silicon tandem junction photovoltaic modules having an area of at least 900 cm{sup 2} with the goal of achieving an aperture area efficiency of 9%. A further objective is to demonstrate modules that retain 95% of their under standard light soaking conditions. Our approach to the attainment of these objective is based on the following distinctive technologies: (a) in-house deposition of SiO{sub 2}/SnO{sub 2}:F onto soda lime glass by APCVD to provide a textured, transparent electrode, (b) single chamber r.f. flow discharge deposition of the a-Si:H layers onto vertical substrates contained with high package density in a box carrier'' to which the discharge is confined (c) sputter deposition of highly reflecting, ZnO-based back contacts, and (d) laser scribing of the a-Si:H and electrodes with real-time scribe tracking to minimize area loss. Continued development of single junction amorphous silicon was aggressively pursued as proving ground for various optical enhancement schemes, new p-layers, and i-layers quality. We have rigorously demonstrated that the introduction of a transitional i-layer does not impair stability and that the initial gain in performance is retained. We have demonstrated a small improvement in cell stability through a post-fabrication treatment consisting of multiple, intense light flashes followed by sufficient annealing. Finally, several experiments have indicated that long term stability can be improved by overcoating the SnO{sub 2} with ZnO. 25 refs., 17 figs.

  9. A hybrid solar cell fabricated using amorphous silicon and a fullerene derivative.

    PubMed

    Yun, Myoung Hee; Jang, Ji Hoon; Kim, Kyung Min; Song, Hee-eun; Lee, Jeong Chul; Kim, Jin Young

    2013-12-01

    Hybrid solar cells, based on organic and inorganic semiconductors, are a promising way to enhance the efficiency of solar cells because they make better use of the solar spectrum and are straightforward to fabricate. We report on a new hybrid solar cell comprised of hydrogenated amorphous silicon (a-Si:H), [6,6]-phenyl-C71-butyric acid methyl ester ([71]PCBM), and poly-3,4-ethylenedioxythiophene poly styrenesulfonate (PEDOT:PSS). The properties of these PEDOT:PSS/a-Si:H/[71]PCBM devices were studied as a function of the thickness of the a-Si:H layer. It was observed that the open circuit voltage and the short circuit current density of the device depended on the thickness of the a-Si:H layer. Under simulated one sun AM 1.5 global illumination (100 mW cm(-2)), a power conversion efficiency of 2.84% was achieved in a device comprised of a 274 nm-thick layer of a-Si:H; this is the best performance achieved to date for a hybrid solar cell made of amorphous Si and organic materials. PMID:24149894

  10. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

    2016-08-01

    Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  11. Transient photocurrent response of three-color detectors based on amorphous silicon

    NASA Astrophysics Data System (ADS)

    Stannowski, B.; Stiebig, H.; Knipp, D.; Wagner, H.

    1999-04-01

    Color detectors based on multilayers of amorphous-silicon alloys facilitate the detection of the three fundamental components of visible light in one single pixel of a sensor array. In order to achieve sensitivity for the blue, green, and red components of light, three different bias voltages are applied to the device. By switching them sequentially the detector is read out. n-i-p-i-i-n structures with a controlled band gap and mobility-lifetime product exhibit excellent stationary properties, namely: good color separation and have dynamic behaviors above 95 dB. Besides the stationary behavior the transient response of a color detector is a further optimization criterion. The experimentally found transient photocurrent response after switching on monochromatic light at different applied bias voltages showed reasonable delay times in the range of tens of milliseconds before reaching steady state. Numerical simulations have been carried out which reproduce this characteristic behavior and facilitate a study of time dependent processes within the device, such as charge transport and storage in localized states. The delay times can be explained by the recharging of electrical defect states in the amorphous material. Consequently, the electrical potential within the device changes, which remarkably affects the carrier transport. Based on these results optimization criteria for the transient behavior of the color detectors are discussed.

  12. Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous silicon

    SciTech Connect

    Priolo, F. ); Spinella, C. ); Rimini, E. )

    1990-03-15

    In this paper we report detailed experimental measurements on the dependence of the ion-beam-induced epitaxial crystallization (IBIEC) of amorphous silicon on dopant concentration. The results show that the presence of B, P, and As dopants enhances IBIEC. In particular a logarithmic relationship between the ion-induced growth rate and dopant concentration is found for all of the impurities. In order to explain this behavior a phenomenological model of IBIEC will also be presented. The model postulates that the same defect is responsible for both thermal and ion-beam annealing. It combines the structural and electronic features of the description proposed by Williams and Elliman for conventional thermal epitaxial growth, with the intracascade approach of Jackson to the ion-assisted regrowth. Defects responsible for IBIEC are identified in kinklike steps formed onto (110) ledges at the crystalline-amorphous interface. These kinks are assumed to be generated thermally within the thermal-spike regime of each collision cascade. After defect generation, then, our approach follows Jackson's as far as the temporal evolution of defects is concerned. The model can account for all of the experimental results previously explained by the Jackson model and, moreover, can account for the doping and orientation dependences of IBIEC. This description is discussed and quantitatively compared with the experimental data.

  13. Understanding subtle changes in medium-range order in amorphous silicon

    NASA Astrophysics Data System (ADS)

    Dagenais, Paule; Lewis, Laurent J.; Roorda, Sjoerd

    2015-07-01

    Based on a detailed study of the radial distribution function (RDF) of a model for amorphous silicon (a-Si), we address the relation between short-range rearrangements and an increase in medium-range order induced by thermal relaxation. Recent experimental measurements have shown that a small peak appears in the RDF around 4.7 Å upon annealing, along with other subtle changes, and this is attributed to ordering among the dihedral angles. We show that, although this is a possible explanation, an increase in short-range order (up to second neighbors) is not only necessary for these changes to occur, but could also be their sole cause. To clarify the nature of disorder in the amorphous system, correlations among dihedral and tetrahedral angles are examined. The bivariate probability distribution of these two variables reveals small correlations between dihedral and tetrahedral angles, associated with the staggered and eclipsed conformations. In the first case, bond angles around 112.5{^\\circ} are favored versus 120{^\\circ} in the second case. Bond angles between 95{^\\circ} and 100{^\\circ} are less probable in both conformations.

  14. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures.

    PubMed

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca I; Kleider, Jean-Paul; Yao, Fei; Hee Lee, Young

    2016-10-12

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n‑ or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq(-1) to 1260 Ω sq(-1) for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm(2) V(-1) s(-1) indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications. PMID:27506254

  15. 3D micro- and nano-machining of hydrogenated amorphous silicon films on SiO2/Si and glass substrates

    NASA Astrophysics Data System (ADS)

    Soleimani-Amiri, S.; Zanganeh, S.; Ramzani, R.; Talei, R.; Mohajerzadeh, S.; Azimi, S.; Sanaee, Z.

    2015-07-01

    We report on the hydrogen-assisted deep reactive ion etching of hydrogenated amorphous silicon (a-Si:H) films deposited using radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). High aspect-ratio vertical and 3D amorphous silicon features, with the desired control over the shaping of the sidewalls, in micro and nano scales, were fabricated in ordered arrays. The suitable adhesion of amorphous Si film to the underlayer allows one to apply deep micro- and nano-machining to these layers. By means of a second deposition of amorphous silicon on highly curved 3D structures and subsequent etching, the fabrication of amorphous silicon rings is feasible. In addition to photolithography, nanosphere colloidal lithography and electron beam lithography were exploited to realize ultra-small features of amorphous silicon. We have also investigated the optical properties of fabricated hexagonally patterned a-Si nanowire arrays on glass substrates and demonstrated their high potential as active layers for solar cells. This etching process presents an inexpensive method for the formation of highly featured arrays of vertical and 3D amorphous silicon rods on both glass and silicon substrates, suitable for large-area applications.

  16. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    NASA Astrophysics Data System (ADS)

    Bullock, J.; Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-01

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO2/a-Si:H and Al2O3/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n+) contacts, with SiO2 thicknesses of ˜1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρc of ˜3 mΩ cm2 and a recombination current density J0c of ˜40 fA/cm2. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p+) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  17. Device and material characterization and analytic modeling of amorphous silicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Slade, Holly Claudia

    Hydrogenated amorphous silicon thin film transistors (TFTs) are now well-established as switching elements for a variety of applications in the lucrative electronics market, such as active matrix liquid crystal displays, two-dimensional imagers, and position-sensitive radiation detectors. These applications necessitate the development of accurate characterization and simulation tools. The main goal of this work is the development of a semi- empirical, analytical model for the DC and AC operation of an amorphous silicon TFT for use in a manufacturing facility to improve yield and maintain process control. The model is physically-based, in order that the parameters scale with gate length and can be easily related back to the material and device properties. To accomplish this, extensive experimental data and 2D simulations are used to observe and quantify non- crystalline effects in the TFTs. In particular, due to the disorder in the amorphous network, localized energy states exist throughout the band gap and affect all regimes of TFT operation. These localized states trap most of the free charge, causing a gate-bias-dependent field effect mobility above threshold, a power-law dependence of the current on gate bias below threshold, very low leakage currents, and severe frequency dispersion of the TFT gate capacitance. Additional investigations of TFT instabilities reveal the importance of changes in the density of states and/or back channel conduction due to bias and thermal stress. In the above threshold regime, the model is similar to the crystalline MOSFET model, considering the drift component of free charge. This approach uses the field effect mobility to take into account the trap states and must utilize the correct definition of threshold voltage. In the below threshold regime, the density of deep states is taken into account. The leakage current is modeled empirically, and the parameters are temperature dependent to 150oC. The capacitance of the TFT can be

  18. An amorphous phase formation at palladium / silicon oxide (Pd/SiO{sub x}) interface through electron irradiation - electronic excitation process

    SciTech Connect

    Nagase, Takeshi; Yamashita, Ryo; Yabuuchi, Atsushi; Lee, Jung-Goo

    2015-11-15

    A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiO{sub x}) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.

  19. Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Huang, Jung-Jie; Liu, Chan-Jui; Lin, Hung-Chien; Tsai, Cheng-Ju; Chen, Yung-Pei; Hu, Guo-Ren; Lee, Cheng-Chung

    2008-12-01

    Influences of silicon nitride (SiNx) films on the electrical performances of hydrogenated amorphous silicon thin film transistors (a-Si : H TFTs) are studied. Relatively low temperature (200 °C) SiNx films are prepared by plasma enhanced chemical vapour deposition at different radio-frequency powers. Results indicate that the SiNx films at a radio-frequency power of 340 W (Power density = 1.96 × 10-1 W cm-2) are near-stoichiometric and have better interface quality. Therefore, a-Si : H TFTs with this SiNx gate dielectric layer have a high field effect mobility and sustain the bias stress. The field effect mobility is 0.59 cm2 V-1 s-1 and the threshold voltage shift after a constant voltage stress (CVS) for 2.8 h is 3.18 V. The electrical degradation mechanism of a-Si : H TFTs is studied from the capacitance-voltage measurement. The degradation of the a-Si : H TFT after CVS is due to the defect generation in the SiNx gate dielectric and a-Si : H active layers. However, when the surface roughness of the SiNx film is poor, the degradation from the a-Si : H/SiNx interface is predominated. Therefore, if the SiNx film is used as a gate dielectric layer to fabricate a-Si : H TFTs, the surface roughness and chemical composition of the SiNx film should be considered simultaneously.

  20. Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors

    PubMed Central

    Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

    2012-01-01

    We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit. PMID:23082282

  1. Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement

    NASA Astrophysics Data System (ADS)

    Conde, J. P.; Chan, K. K.; Blum, J. M.; Arienzo, M.; Cuomo, J. J.

    1992-04-01

    High-quality, hydrogenated amorphous silicon (a-Si:H) is deposited at room temperature by rf glow discharge at a high deposition rate using a tubular reactor with cylindrical symmetry (concentric-electrode plasma-enhanced chemical vapor deposition, CE-PECVD). Using the novel CE-PECVD design, room-temperature deposition of a-Si:H with growth rates up to 14 Å s-1, low hydrogen concentration (≲10%), and the bonded hydrogen in the Si-H monohydride configuration, is achieved for the first time using an rf glow-discharge technique. The influence of the deposition parameters (silane flow rate, pressure, and power density) on the growth rate, optical band gap, and silicon-hydrogen bonding configuration, is quantitatively predicted using a deposition mechanism based on the additive contribution of three growth precursors, SiH2, SiH3, and Si2H6, with decreasing sticking coefficients of 0.7, 0.1, and 0.001, respectively. The low hydrogen concentration is due to the enhanced ion bombardment resulting from the concentric electrode design.

  2. Crystallization of amorphous silicon thin films using nanoenergetic intermolecular materials with buffer layers

    NASA Astrophysics Data System (ADS)

    Lee, Choong Hee; Jeong, Tae Hoon; Kim, Do Kyung; Jeong, Woong Hee; Kang, Myung-Koo; Hwang, Tae Hyung; Kim, Hyun Jae

    2009-02-01

    Optimization of the crystallization of amorphous silicon (a-Si) using a mixture of nanoenergetic materials of iron oxide/aluminum (Fe 2O 3/Al) was studied. To achieve high-quality polycrystalline Si (poly-Si) thin films, silicon oxide (SiO 2) and silver (Ag) layer were deposited on the a-Si as buffer layers to prevent the metal diffusion in a-Si during thermite reaction and to transport the thermal energy released from nanoenergetic materials, respectively. Raman measurement was used to define the crystallinity of poly-Si. For molar ratio of Al and Fe of 2 with 100-nm-thick-SiO 2, Raman measurement showed the 519.59 cm -1 of peak position and the 5.08 cm -1 of full width at half maximum with 353 MPa of low tensile stress indicating high quality poly-Si thin film. These results showed that optimized thermite reaction could be used successfully in crystallization of a-Si to high -quality poly-Si thin films.

  3. Microstructure from joint analysis of experimental data and ab initio interactions: Hydrogenated amorphous silicon

    SciTech Connect

    Biswas, Parthapratim; Drabold, D. A.; Atta-Fynn, Raymond

    2014-12-28

    A study of the formation of voids and molecular hydrogen in hydrogenated amorphous silicon is presented based upon a hybrid approach that involves inversion of experimental nuclear magnetic resonance data in conjunction with ab initio total-energy relaxations in an augmented solution space. The novelty of this approach is that the voids and molecular hydrogen appear naturally in the model networks unlike conventional approaches, where voids are created artificially by removing silicon atoms from the networks. Two representative models with 16 and 18 at. % of hydrogen are studied in this work. The result shows that the microstructure of the a-Si:H network consists of several microvoids and few molecular hydrogen for concentration above 15 at. % H. The microvoids are highly irregular in shape and size, and have a linear dimension of 5–7 Å. The internal surface of a microvoid is found to be decorated with 4–9 hydrogen atoms in the form of monohydride Si–H configurations as observed in nuclear magnetic resonance experiments. The microstructure consists of (0.9–1.4)% hydrogen molecules of total hydrogen in the networks. These observations are consistent with the outcome of infrared spectroscopy, nuclear magnetic resonance, and calorimetry experiments.

  4. Morphological and structural effects of excimer laser treatment of amorphous silicon

    PubMed

    Loreti; della Sala D; Garozzo

    2000-06-01

    The excimer laser irradiation of thin film amorphous silicon (a-Si) precursors on glass is a suitable method for obtaining high-performance polycrystalline silicon (p-Si) active layers for devices and circuits. By changing the experimental conditions, the recrystallization method generates a variety of microstructures that have direct impact on the material performance. An additional reason for microstructural characterization is introduced by the methods for spatially locating the recrystallization nuclei, used in more ergonomic concepts of device fabrication. Metal and SiO2 strip overlayers have been applied here, on a-Si to fix the position of the solidification seeds after laser melting. The control of many aspects of the thin film microstructure can be achieved with a collection of a few inspection techniques like AFM, SEM, EC contrast, TEM, X-ray diffraction (XRD), some of which require preliminary grain decoration treatment, and some do not. The results of different irradiation experiments, are herein illustrated, enlightened by the above characterization techniques, for providing information on surface morphology, grain arrangement, preferred orientation. PMID:10702980

  5. Technological customization of uncooled amorphous silicon microbolometer for THz real time imaging

    NASA Astrophysics Data System (ADS)

    Pocas, S.; Deronzier, E.; Brianceau, P.; Imperinetti, P.; Dumont, G.; Roule, A.; Rabaud, W.; Meilhan, J.; Simoens, F.; Goudon, V.; Vialle, Claire; Arnaud, A.

    2013-03-01

    Terahertz uncooled antenna-coupled microbolometer focal plane arrays are being developed at CEA Leti for real time THz imaging and sensing. This detector relies on LETI amorphous silicon uncooled infrared bolometer technology that has been deeply modified to optimize sensitivity in the THz range. The main technological key lock of the pixel structure is the quarter wavelength cavity that consists in a thick dielectric layer deposited over the metalized CMOS wafer; such cavity improves significantly the optical coupling efficiency. Copper plugs connect the microbolometer level down to the CMOS readout circuit (ROIC) upper metal pads through this thick dielectric cavity. This paper explains how we have improved the copper vias technology and the challenges we have faced to customize the microbolometer while keeping a monolithically above IC technology fully compatible with standard silicon processes. The results show a very good operability and reproducibility of the contact through this thick oxide cavity. Due to these good results, we have been able to characterize a very efficient THz absorption that enables real time imaging with high sensitivity in the 1-3 THz range.

  6. Light-induced defects in hydrogenated amorphous silicon studied by the constant-photocurrent method

    NASA Astrophysics Data System (ADS)

    Schmidt, J. A.; Arce, R.; Buitrago, R. H.; Koropecki, R. R.

    1997-04-01

    The light-induced creation of metastable defects in undoped hydrogenated amorphous silicon has been followed using photoconductivity and absorption coefficient measurements. The density of states in the gap was obtained from the deconvolution of the subgap absorption coefficient measured by the constant-photocurrent method. We found that the decay of the photoconductivity and the evolution of the integrated density of subgap states follow the dependence on illumination time (till) predicted by the ``bond-breaking'' model. The density of occupied states obtained from the deconvolution procedure shows the presence of two peaks within the gap. After subtracting the valence band-tail contribution, these peaks can be well fitted with two Gaussians. The areas of both Gaussians increase as t1/3ill while their positions and widths remain unchanged. According to the energy position of these peaks, they are ascribed to the neutral and negatively charged silicon dangling bonds D0 and D-. We found that in this intrinsic sample the density of charged defects exceeds that of neutral defects, their ratio D-/D0 being approximately 2.6. This ratio is independent of the illumination time.

  7. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Semiannual subcontract progress report, 1 December 1984-31 May 1985

    SciTech Connect

    Ashton, G.R.; Aspen, F.E.; Jacobson, R.L.; Jeffrey, F.R.; Tran, N.T.

    1986-01-01

    This report presents interim results of research in high-efficiency, single-junction, monolithic thin-film amorphous silicon solar cells, which consists of five research tasks: (1) amorphous silicon materials research, (2) nonsemiconductor materials research, (3) solar cell research, (4) monolithic, intraconnected cells/submodule research, and (5) multichamber deposition system research. The subcontracted work reported here advances the state of the art in thin-film amorphous silicon solar cell development through work on flexible substrates. A multichamber deposition system for depositing a-Si onto polyimide flexible web is essentially complete.

  8. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  9. Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique

    SciTech Connect

    LeBoeuf, J. L. Brodusch, N.; Gauvin, R.; Quitoriano, N. J.

    2014-12-28

    A novel method has been optimized so that adhesion layers are no longer needed to reliably deposit patterned gold structures on amorphous substrates. Using this technique allows for the fabrication of amorphous oxide templates known as micro-crucibles, which confine a vapor–liquid–solid (VLS) catalyst of nominally pure gold to a specific geometry. Within these confined templates of amorphous materials, faceted silicon crystals have been grown laterally. The novel deposition technique, which enables the nominally pure gold catalyst, involves the undercutting of an initial chromium adhesion layer. Using electron backscatter diffraction it was found that silicon nucleated in these micro-crucibles were 30% single crystals, 45% potentially twinned crystals and 25% polycrystals for the experimental conditions used. Single, potentially twinned, and polycrystals all had an aversion to growth with the (1 0 0) surface parallel to the amorphous substrate. Closer analysis of grain boundaries of potentially twinned and polycrystalline samples revealed that the overwhelming majority of them were of the 60° Σ3 coherent twin boundary type. The large amount of coherent twin boundaries present in the grown, two-dimensional silicon crystals suggest that lateral VLS growth occurs very close to thermodynamic equilibrium. It is suggested that free energy fluctuations during growth or cooling, and impurities were the causes for this twinning.

  10. Formation of amorphous silicon passivation films with high stability against postannealing, air exposure, and light soaking using liquid silicon

    NASA Astrophysics Data System (ADS)

    Guo, Cheng; Ohdaira, Keisuke; Takagishi, Hideyuki; Masuda, Takashi; Shen, Zhongrong; Shimoda, Tatsuya

    2016-04-01

    We applied liquid-source vapor deposition (LVD), thermal CVD from the vapor of cyclopentasilane (CPS), to form amorphous silicon (a-Si) passivation films on crystalline Si (c-Si) wafers, and investigated the thermal stability of the films against postannealing. LVD a-Si passivation films showed a high initial effective minority carrier lifetime (τeff) of >300 µs and a higher thermal stability than a reference plasma-enhanced chemical-vapor-deposited (PECVD) sample. The high thermal stability of LVD a-Si passivation films may be attributed to the considerably high deposition temperature of the films at 360 °C or more. LVD a-Si passivation films were sufficiently stable also against air exposure and 1-sun light soaking. We also confirmed that the epitaxial growth of Si films does not occur on c-Si even at such high deposition temperatures, and LVD could realize the simultaneous deposition of a-Si films on both sides of a c-Si wafer.

  11. The impact of cine EPID image acquisition frame rate on markerless soft-tissue tracking

    SciTech Connect

    Yip, Stephen Rottmann, Joerg; Berbeco, Ross

    2014-06-15

    Purpose: Although reduction of the cine electronic portal imaging device (EPID) acquisition frame rate through multiple frame averaging may reduce hardware memory burden and decrease image noise, it can hinder the continuity of soft-tissue motion leading to poor autotracking results. The impact of motion blurring and image noise on the tracking performance was investigated. Methods: Phantom and patient images were acquired at a frame rate of 12.87 Hz with an amorphous silicon portal imager (AS1000, Varian Medical Systems, Palo Alto, CA). The maximum frame rate of 12.87 Hz is imposed by the EPID. Low frame rate images were obtained by continuous frame averaging. A previously validated tracking algorithm was employed for autotracking. The difference between the programmed and autotracked positions of a Las Vegas phantom moving in the superior-inferior direction defined the tracking error (δ). Motion blurring was assessed by measuring the area change of the circle with the greatest depth. Additionally, lung tumors on 1747 frames acquired at 11 field angles from four radiotherapy patients are manually and automatically tracked with varying frame averaging. δ was defined by the position difference of the two tracking methods. Image noise was defined as the standard deviation of the background intensity. Motion blurring and image noise are correlated with δ using Pearson correlation coefficient (R). Results: For both phantom and patient studies, the autotracking errors increased at frame rates lower than 4.29 Hz. Above 4.29 Hz, changes in errors were negligible withδ < 1.60 mm. Motion blurring and image noise were observed to increase and decrease with frame averaging, respectively. Motion blurring and tracking errors were significantly correlated for the phantom (R = 0.94) and patient studies (R = 0.72). Moderate to poor correlation was found between image noise and tracking error with R −0.58 and −0.19 for both studies, respectively. Conclusions: Cine EPID

  12. Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

    NASA Technical Reports Server (NTRS)

    Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

    2007-01-01

    Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

  13. The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D

    SciTech Connect

    Smith, J.; Fonash, S.; Kalkan, A.

    1994-06-01

    We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

  14. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986

    SciTech Connect

    Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

    1987-02-01

    A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

  15. Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon.

    PubMed

    Puerto, Daniel; Garcia-Lechuga, Mario; Hernandez-Rueda, Javier; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2016-07-01

    Self-assembly (SA) of molecular units to form regular, periodic extended structures is a powerful bottom-up technique for nanopatterning, inspired by nature. SA can be triggered in all classes of solid materials, for instance, by femtosecond laser pulses leading to the formation of laser-induced periodic surface structures (LIPSS) with a period slightly shorter than the laser wavelength. This approach, though, typically involves considerable material ablation, which leads to an unwanted increase of the surface roughness. We present a new strategy to fabricate high-precision nanograting structures in silicon, consisting of alternating amorphous and crystalline lines, with almost no material removal. The strategy can be applied to static irradiation experiments and can be extended into one and two dimensions by scanning the laser beam over the sample surface. We demonstrate that lines and areas with parallel nanofringe patterns can be written by an adequate choice of spot size, repetition rate and scan velocity, keeping a constant effective pulse number (N eff) per area for a given laser wavelength. A deviation from this pulse number leads either to inhomogeneous or ablative structures. Furthermore, we demonstrate that this approach can be used with different laser systems having widely different wavelengths (1030 nm, 800 nm, 400 nm), pulse durations (370 fs, 100 fs) and repetition rates (500 kHz, 100 Hz, single pulse) and that the grating period can also be tuned by changing the angle of laser beam incidence. The grating structures can be erased by irradiation with a single nanosecond laser pulse, triggering recrystallization of the amorphous stripes. Given the large differences in electrical conductivity between the two phases, our structures could find new applications in nanoelectronics. PMID:27199344

  16. Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon

    NASA Astrophysics Data System (ADS)

    Puerto, Daniel; Garcia-Lechuga, Mario; Hernandez-Rueda, Javier; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2016-07-01

    Self-assembly (SA) of molecular units to form regular, periodic extended structures is a powerful bottom-up technique for nanopatterning, inspired by nature. SA can be triggered in all classes of solid materials, for instance, by femtosecond laser pulses leading to the formation of laser-induced periodic surface structures (LIPSS) with a period slightly shorter than the laser wavelength. This approach, though, typically involves considerable material ablation, which leads to an unwanted increase of the surface roughness. We present a new strategy to fabricate high-precision nanograting structures in silicon, consisting of alternating amorphous and crystalline lines, with almost no material removal. The strategy can be applied to static irradiation experiments and can be extended into one and two dimensions by scanning the laser beam over the sample surface. We demonstrate that lines and areas with parallel nanofringe patterns can be written by an adequate choice of spot size, repetition rate and scan velocity, keeping a constant effective pulse number (N eff) per area for a given laser wavelength. A deviation from this pulse number leads either to inhomogeneous or ablative structures. Furthermore, we demonstrate that this approach can be used with different laser systems having widely different wavelengths (1030 nm, 800 nm, 400 nm), pulse durations (370 fs, 100 fs) and repetition rates (500 kHz, 100 Hz, single pulse) and that the grating period can also be tuned by changing the angle of laser beam incidence. The grating structures can be erased by irradiation with a single nanosecond laser pulse, triggering recrystallization of the amorphous stripes. Given the large differences in electrical conductivity between the two phases, our structures could find new applications in nanoelectronics.

  17. Structure-Property Relationships in Polymer Derived Amorphous/Nano-Crystalline Silicon Carbide for Nuclear Applications

    SciTech Connect

    Zunjarrao, Suraj C.; Singh, Abhishek K.; Singh, Raman P.

    2006-07-01

    Silicon carbide (SiC) is a promising candidate for several applications in nuclear reactors owing to its high thermal conductivity, high melting temperature, good chemical stability, and resistance to swelling under heavy ion bombardment. However, fabricating SiC by traditional powder processing route generally requires very high temperatures for pressureless sintering. Polymer derived ceramic materials offer unique advantages such as ability to fabricate net shaped components, incorporate reinforcements and relatively low processing temperatures. Furthermore, for SiC based ceramics fabricated using polymer infiltration process (PIP), the microstructure can be tailored by controlling the processing parameters, to get an amorphous, nanocrystalline or crystalline SiC. In this work, fabrication of polymer derived amorphous and nano-grained SiC is presented and its application as an in-core material is explored. Monolithic SiC samples are fabricated by controlled pyrolysis of allyl-hydrido-poly-carbo-silane (AHPCS) under inert atmosphere. Chemical changes, phase transformations and microstructural changes occurring during the pyrolysis process are studied as a function of the processing temperature. Polymer cross-linking and polymer to ceramic conversion is studied using infrared spectroscopy (FTIR). Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) are performed to monitor the mass loss and phase change as a function of temperature. X-ray diffraction studies are done to study the intermediate phases and microstructural changes. Variation in density is carefully monitored as a function of processing temperature. Owing to shrinkage and gas evolution during pyrolysis, precursor derived ceramics are inherently porous and composite fabrication typically involves repeated cycles of polymer re-infiltration and pyrolysis. However, there is a limit to the densification that can be achieved by this method and porosity in the final materials presents

  18. Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure

    PubMed Central

    Kichou, Sofiane; Silvestre, Santiago; Nofuentes, Gustavo; Torres-Ramírez, Miguel; Chouder, Aissa; Guasch, Daniel

    2016-01-01

    Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper “Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure” (Kichou et al., 2016) [1]. PMID:26977439

  19. Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure.

    PubMed

    Kichou, Sofiane; Silvestre, Santiago; Nofuentes, Gustavo; Torres-Ramírez, Miguel; Chouder, Aissa; Guasch, Daniel

    2016-06-01

    Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper "Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure" (Kichou et al., 2016) [1]. PMID:26977439

  20. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual technical report, April 1, 1995--March 31, 1996

    SciTech Connect

    Gordon, R.G.; Sato, H.; Liang, H.; Liu, X.; Thornton, J.

    1996-08-01

    The general objective is to develop methods to deposit materials which can be used to make more efficient solar cells. The work is organized into three general tasks: Task 1. Develop improved methods for depositing and using transparent conductors of fluorine-doped zinc oxide in amorphous silicon solar cells Task 2. Deposit and evaluate titanium oxide as a reflection-enhancing diffusion barrier between amorphous silicon and an aluminum or silver back-reflector. Task 3. Deposit and evaluate electrically conductive titanium oxide as a transparent conducting layer on which more efficient and more stable superstrate cells can be deposited. About one-third of the current project resources are allocated to each of these three objectives.

  1. Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties

    SciTech Connect

    Emelyanov, A. V. Kazanskii, A. G.; Kashkarov, P. K.; Konkov, O. I.; Terukov, E. I.; Forsh, P. A.; Khenkin, M. V.; Kukin, A. V.; Beresna, M.; Kazansky, P.

    2012-06-15

    The effect of the femtosecond laser treatment of hydrogenated amorphous silicon (a-Si:H) films on their structural, optical, and photoelectric properties is studied. Under the experimental conditions applied in the study, laser treatment of the film with different radiation intensities induces structural changes that are nonuniform over the film surface. An increase in the radiation intensity yields an increase in the contribution of the nanocrystalline phase to the structure, averaged over the sample surface, as well as an increase in the conductance and photoconductance of the samples. At the same time, for all of the samples, the absorption spectrum obtained by the constant-photocurrent method has a shape typical for those of amorphous silicon. Obtained results indicate the possibility of a-Si:H films photoconductance increase by femtosecond pulse laser treatment.

  2. Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation

    NASA Astrophysics Data System (ADS)

    Jamison, Laura; Zheng, Ming-Jie; Shannon, Steve; Allen, Todd; Morgan, Dane; Szlufarska, Izabela

    2014-02-01

    The crystalline-to-amorphous transition in nanocrystalline silicon carbide (ncSiC) has been studied using 1.25 MeV electron irradiation. When compared to literature values for single crystal silicon carbide under electron irradiation, an increase in the dose to amorphization (DTA) was observed, indicative of an increase in radiation resistance. Factors that contribute to this improvement are grain refinement, grain texture, and a high density of stacking faults (SFs) in this sample of ncSiC. To test the effect of SFs on the DTA, density functional theory simulations were conducted. It was found that SFs reduced the energy barriers for both Si interstitial migration and the rate-limiting defect recovery reaction, which may explain the increased DTA.

  3. Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures

    NASA Astrophysics Data System (ADS)

    Hilali, Mohamed M.; Yang, Shuqiang; Miller, Mike; Xu, Frank; Banerjee, Sanjay; Sreenivasan, S. V.

    2012-10-01

    In this paper, we have explored manufacturable approaches to sub-wavelength controlled three-dimensional (3D) nano-patterns with the goal of significantly enhancing the photocurrent in amorphous silicon solar cells. Here we demonstrate efficiency enhancement of about 50% over typical flat a-Si thin-film solar cells, and report an enhancement of 20% in optical absorption over Asahi textured glass by fabricating sub-wavelength nano-patterned a-Si on glass substrates. External quantum efficiency showed superior results for the 3D nano-patterned thin-film solar cells due to enhancement of broadband optical absorption. The results further indicate that this enhanced light trapping is achieved with minimal parasitic absorption losses in the deposited transparent conductive oxide for the nano-patterned substrate thin-film amorphous silicon solar cell configuration. Optical simulations are in good agreement with experimental results, and also show a significant enhancement in optical absorption, quantum efficiency and photocurrent.

  4. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  5. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures. PMID:27442970

  6. From amorphous to microcrystalline: Phase transition in rapid synthesis of hydrogenated silicon thin film in low frequency inductively coupled plasmas

    SciTech Connect

    Xiao, S. Q.; Xu, S.; Wei, D. Y.; Huang, S. Y.; Zhou, H. P.; Xu, Y.

    2010-12-01

    Hydrogenated silicon (Si:H) thin films were fabricated on glass substrates by low frequency inductively coupled plasma-assisted chemical vapor deposition using a silane precursor with low hydrogen dilution at room temperature. The crystallinity and microstructure properties of the Si:H thin films deposited at different inductive radio-frequency (rf) power density were systematically studied by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. We found that at a low rf power density of 16.7 to 20.8 mW/cm{sup 3}, the structure of silicon thin films evolves from a completely amorphous phase to an intermediate phase containing both amorphous and microcrystalline silicon. As the power density is increased to a moderate value of 25 mW/cm{sup 3}, a highly crystallized (111)-preferred hydrogenated microcrystalline silicon ({mu}c-Si:H) film featuring a vertically aligned cone-shaped structure, is emerging. Both the crystallinity and deposition rate exhibit a monotonic increase with the increase in the rf power density, reaching a maximum value of 85% and 1.07 nm/s, respectively, at a power density of 41.7 mW/cm{sup 3}. Scanning electron microscopy reveals that continuous and dense {mu}c-Si:H films with grain size of tens to hundreds nanometers can be achieved deterministically without the formation of amorphous incubation layer, and this is of great importance for synthesis of multilayer structures in p-i-n solar cells. The formation mechanism of the {mu}c-Si:H films and the elimination of the amorphous incubation layer are explained in terms of the high electron density and the plasma-surface interactions.

  7. Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

    DOEpatents

    Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

    1997-07-08

    High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

  8. Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

    DOEpatents

    Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

    1999-08-24

    High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

  9. High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

    PubMed

    Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

    2015-11-01

    High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. PMID:26418573

  10. Photochemical vapor deposition of amorphous silicon photovoltaic devices. Semiannual subcontract report, 1 May 1985-31 October 1985

    SciTech Connect

    Baron, B.N.; Rocheleau, R.E.; Hegedus, S.S.

    1986-06-01

    Intrinsic, p-type, and n-type hydrogenated amorphous silicon thin-films have been deposited by mercury-sensitized photochemical vapor deposition (photo-CVD) from disilane. The photochemical reactor design includes two chambers separated by a movable uv-transparent Teflon curtain to eliminate deposition on the reactor window. Glass/TCO/p-i-n/metal photovoltaic devices were fabricated by photo-CVD. The efficiency at 87.5 MW/cm/sup 2/(ELH) was 5.1%.

  11. Gas-phase free radical reactions in the glow-discharge deposition of hydrogenated amorphous silicon from silane and disilane

    SciTech Connect

    Kampas, F.J.

    1985-03-15

    An analysis of a measurement by Matsuda and co-workers of the lifetimes of the free radicals involved in the glow-discharge deposition of amorphous hydrogenated silicon from silane and disilane at 20-mTorr pressure is consistent with the hypothesis that SiH or SiH/sub 2/, but not SiH/sub 3/, is the dominant radical in the deposition from silane at that pressure.

  12. Laser annealing and simulation of amorphous silicon thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Theodorakos, I.; Raptis, Y. S.; Vamvakas, V.; Tsoukalas, D.; Zergioti, I.

    2014-03-01

    In this work, a picosecond DPSS and a nanosecond Nd:YAG laser have been used for the annealing and the partial nanocrystallization of an amorphous silicon layer. These experiments were conducted in order to improve the characteristics of a micromorph tandem solar cell. The laser annealing was attempted at 1064nm in order to obtain the desired crystallization's depth and ratios. Preliminary annealing-processes, with different annealing parameters, have been tested, such as fluence, repetition rate and number of pulses. Irradiations were applied in the sub-melt regime, in order to prevent significant diffusion of p- and n-dopants to take place within the structure. The laser experimental work was combined with simulations of the laser annealing process, in terms of temperature distribution evolution, using the Synopsys Sentaurus Process TCAD software. The optimum annealing conditions for the two different pulse durations were determined. Experimentally determined optical properties of our samples, such as the absorption coefficient and reflectivity, were used for a more realistic simulation. From the simulations results, a temperature profile, appropriate to yield the desired recrystallization was obtained for the case of ps pulses, which was verified from the experimental results described below. The annealed material was studied, as far as it concerns its structural properties, by XRD, SEM and micro-Raman techniques, providing consistent information on the characteristics of the nanocrystalline material produced by the laser annealing experiments. It was found that, with the use of ps pulses, the resultant polycrystalline region shows crystallization's ratios similar to a PECVD developed poly-Silicon layer, with slightly larger nanocrystallite's size.

  13. Microstructures of the silicon carbide nanowires obtained by annealing the mechanically-alloyed amorphous powders

    SciTech Connect

    Zhang, Pengfei Li, Xinli

    2015-07-15

    Silicon, graphite and boron nitride powders were mechanically alloyed for 40 h in argon. The as-milled powders were annealed at 1700 °C in nitrogen for 30 min. The annealed powders are covered by a thick layer of gray–green SiC nanowires, which are 300 nm to 1000 nm in diameter and several hundred microns in length. Trace iron in the raw powders acts as a catalyst, promoting the V–L–S process. It follows that the actual substances contributing to the growth of the SiC nanowires may be silicon, graphite and the metal impurities in the raw powders. The results from HRTEM and XRD reveal that the products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. It is interestingly found that 6H–SiC coexists with 3C–SiC in one nodular nanowire. This novel structure may introduce periodic potential field along the longitudinal direction of the nanowires, and may find applications in the highly integrated optoelectronic devices. - Graphical abstract: Display Omitted - Highlights: • SiC nanowires were prepared by annealing the mechanically alloyed amorphous powders. • SiC nanowires are 300 nm to 1000 nm in diameter and several hundred microns in length. • The products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. • Trace Fe in the raw powders acts as a catalyst, promoting the V–L–S process. • 6H–SiC coexists with 3C–SiC in one nodular SiC nanowire.

  14. In situ spectroellipsometric study of the nucleation and growth of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Canillas, A.; Bertran, E.; Andújar, J. L.; Drévillon, B.

    1990-09-01

    A detailed in situ spectroellipsometric analysis of the nucleation and growth of hydrogenated amorphous silicon (a:Si:H) is presented. Photoelectronic quality a-Si:H films are deposited by plasma-enhanced chemical vapor deposition on smooth metal (NiCr alloy) and crystalline silicon (c-Si) substrates. The deposition of a-Si:H is analyzed from the first monolayer up to a final thickness of 1.2 μm. In order to perform an improved analysis, real time ellipsometric trajectories are recorded, using fixed preparation conditions, at various photon energies ranging from 2.2 to 3.6 eV. The advantage of using such a spectroscopic experimental procedure is underlined. New insights into the nucleation and growth mechanisms of a-Si:H are obtained. The nucleation mechanism on metal and c-Si substrates is very accurately described assuming a columnar microstructural development during the early stage of the growth. Then, as a consequence of the incomplete coalescence of the initial nuclei, a surface roughness at the 10-15 Å scale is identified during the further growth of a-Si:H on both substrates. The bulk a-Si:H grows homogeneously beneath the surface roughness. Finally, an increase of the surface roughness is evidenced during the long term growth of a-Si:H. However, the nature of the substrate influenced the film growth. In particular, the film thickness involved in the nucleation-coalescence phase is found lower in the case of c-Si (67±8 Å) as compared to NiCr (118±22 Å). Likewise films deposited on c-Si present a smaller surface roughness even if thick samples are considered (>1 μm). More generally, the present study illustrates the capability of in situ spectroellipsometry to precisely analyze fundamental processes in thin-film growth, but also to monitor the preparation of complex structures on a few monolayers scale.

  15. Deposition of Amorphous Silicon and Silicon-Based Dielectrics by Remote Plasma-Enhanced Chemical Vapor Deposition: Application to the Fabrication of Tft's and Mosfet's.

    NASA Astrophysics Data System (ADS)

    Kim, Sang Soo

    1990-01-01

    This thesis discusses the deposition of device quality silicon dioxide (SiO_2), silicon nitride (Si_3N_4 ), and hydrogenated amorphous silicon (a-Si:H) by the remote plasma enhanced chemical vapor deposition (Remote PECVD) technique at low substrate temperature (100 ^circC < T _{rm s} < 450^ circC). An ultra-high-vacuum (UHV) compatible, multi-chamber integrated processing system has been built and used for this study. This system provides: (1) in -situ substrate processing; (2) surface analysis by Auger electron spectroscopy (AES) and reflected high energy electron diffraction (RHEED); and (3) thin film deposition by Remote PECVD. Six issues are addressed: (1) in-situ semiconductor surface cleaning for Si, Ge, GaAs, and CdTe; (2) substrate surface characterization by using RHEED and AES; (3) process gas-substrate interactions (subcutaneous oxidation) occurring during the thin film deposition; (4) the thin film deposition process for silicon-based dielectrics and for doped and intrinsic amorphous silicon; (5) physical properties of the thin films deposited by Remote PECVD using in-situ AES, and ex-situ infrared (ir) spectroscopy and ellipsometry; and (6) electrical performance of thin films in device structures including metal-oxide/or insulator-semiconductor (MOS or MIS) capacitors formed on silicon, and hydrogenated -amorphous silicon thin film transistors (a-Si:H TFT's). Atomically clean semiconductor surfaces are obtained by a remote hydrogen plasma treatment prior to thin film deposition. In the remote PECVD process the process gases are selectively excited, the silane reactant, the source of silicon atoms in the films is never directly plasma excited, and the substrate is also remote from the plasma discharge region. These differences between the remote PECVD process and the conventional direct PECVD process, result in improved control of the insulator stoichiometry, and a reduction in level of chemical impurities such as hydrogen. We find that the

  16. Thermal and Cold Neutron Computed Tomography at the Los Alamos Neutron Scattering Center Using an Amorphous Silicon Detector Array

    SciTech Connect

    Claytor, T.N.; Schwab, M.J.; Farnum, E.H.; McDonald, T.E.; Summa, D.A.; Sheats, M.J.; Stupin, D.M.; Sievers, W.L.

    1998-07-19

    The use of the EG and G-Heimann RTM 128 or dpiX FS20 amorphous silicon (a-Si) detector array for thermal neutron radiography/computed tomography has proven to be a quick and efficient means of producing high quality digital radiographic images. The resolution, although not as good as film, is about 750 pm with the RTM and 127 pm with the dpiX array with a dynamic range in excess of 2,800. In many respects using an amorphous silicon detector is an improvement over other techniques such as imaging with a CCD camera, using a storage phosphor plate or film radiography. Unlike a CCD camera, which is highly susceptible to radiation damage, a-Si detectors can be placed in the beam directly behind the object under examination and do not require any special optics or turning mirrors. The amorphous silicon detector also allows enough data to be acquired to construct a digital image in just a few seconds (minimum gate time 40 ms) whereas film or storage plate exposures can take many minutes and then need to be digitized with a scanner. The flat panel can therefore acquire a complete 3D computed tomography data set in just a few tens of minutes. While a-Si detectors have been proposed for use in imaging neutron beams, this is the first reported implementation of such a detector for neutron imaging.

  17. Light-induced V{sub oc} increase and decrease in high-efficiency amorphous silicon solar cells

    SciTech Connect

    Stuckelberger, M. Riesen, Y.; Despeisse, M.; Schüttauf, J.-W.; Haug, F.-J.; Ballif, C.

    2014-09-07

    High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (V{sub oc}) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the V{sub oc} increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclude varying the effective p-layer thickness as the cause of the substrate roughness dependence. Instead, we explain the observations by an increase of the dangling-bond density in both the p-layer—causing a V{sub oc} increase—and in the intrinsic absorber layer, causing a V{sub oc} decrease. We present a mechanism for the light-induced increase and decrease, justified by the investigation of light-induced changes of the p-layer and supported by Advanced Semiconductor Analysis simulation. We conclude that a shift of the electron quasi-Fermi level towards the conduction band is the reason for the observed V{sub oc} enhancements, and poor amorphous silicon quality on rough substrates enhances this effect.

  18. Catalytic doping of phosphorus and boron atoms on hydrogenated amorphous silicon films

    NASA Astrophysics Data System (ADS)

    Seto, Junichi; Ohdaira, Keisuke; Matsumura, Hideki

    2016-04-01

    We investigate the low-temperature doping of phosphorus (P) and boron (B) atoms on hydrogenated amorphous silicon (a-Si:H) films by catalytic doping (Cat-doping). The conductivity of a-Si:H films increases as catalyzer temperature (T cat) increases, and the increase in conductivity is accompanied by a significant reduction in activation energy obtained from the Arrhenius plot of the conductivity. Secondary ion mass spectrometry (SIMS) measurement reveals that Cat-doped P and B atoms exist within ˜10-15 nm from the a-Si:H film surface, indicating that the shallow doping of P and B atoms is realized on a-Si:H films similarly to the case of Cat-doping on crystalline Si (c-Si) wafers. We also confirm no additional film deposition during Cat-doping. These results suggest that decomposed species are effectively doped on a-Si:H films similarly to the case of Cat-doping on c-Si.

  19. Adjustable optical response of amorphous silicon nanowires integrated with thin films.

    PubMed

    Dhindsa, Navneet; Walia, Jaspreet; Pathirane, Minoli; Khodadad, Iman; Wong, William S; Saini, Simarjeet Singh

    2016-04-01

    We experimentally demonstrate a new optical platform by integrating hydrogenated amorphous silicon nanowire arrays with thin films deposited on transparent substrates like glass. A 535 nm thick thin film is anisotropically etched to fabricate vertical nanowire arrays of 100 nm diameter arranged in a square lattice. Adjusting the nanowire length, and consequently the thin film thickness permits the optical properties of this configuration to be tuned for either transmission filter response or enhanced broadband absorption. Vivid structural colors are also achieved in reflection and transmission. The optical properties of the platform are investigated for three different etch depths. Transmission filter response is achieved for a configuration with nanowires on glass without any thin film. Alternatively, integrating thin film with nanowires increases the absorption efficiency by ∼97% compared to the thin film starting layer and by ∼78% over nanowires on glass. The ability to tune the optical response of this material in this fashion makes it a promising platform for high performance photovoltaics, photodetectors and sensors. PMID:26906427

  20. Optically activated sub-millimeter dielectric relaxation in amorphous thin film silicon at room temperature

    SciTech Connect

    Rahman, Rezwanur; Ohno, Tim R.; Taylor, P. C.; Scales, John A.

    2014-05-05

    Knowing the frequency-dependent photo-induced complex conductivity of thin films is useful in the design of photovoltaics and other semi-conductor devices. For example, annealing in the far-infrared could in principle be tailored to the specific dielectric properties of a particular sample. The frequency dependence of the conductivity (whether dark or photo-induced) also gives insight into the effective dimensionality of thin films (via the phonon density of states) as well as the presence (or absence) of free carriers, dopants, defects, etc. Ultimately, our goal is to make low-noise, phase-sensitive room temperature measurements of the frequency-dependent conductivity of thin films from microwave frequencies into the far-infrared; covering, the frequency range from ionic and dipole relaxation to atomic and electronic processes. To this end, we have developed a high-Q (quality factor) open cavity resonator capable of resolving the complex conductivity of sub-micron films in the range of 100–350 GHz (0.1–0.35 THz, or 0.4–1 meV). In this paper, we use a low-power green laser to excite bound charges in high-resistivity amorphous silicon thin film. Even at room temperature, we can resolve both the dark conductivity and photo-induced changes associated with dielectric relaxation and possibly some small portion of free carriers.