Science.gov

Sample records for area hybrid photodiodes

  1. Test of DEP hybrid photodiodes

    SciTech Connect

    Baumbaugh, A.; Binkley, M.; Elias, J.

    1997-08-01

    The goal of the measurement was to study some parameters of DEP HYBRID PHOTODIODES (HPD), and the check its performance for CMS calorimetry at LHC. The principal of the HPD operation is described. The schematic view of the HPD. The HPD is vacuum photo device composed of photocathode (PC) and a silicon PIN diode (Si) as multiplication system in a very close proximity geometry. The distance between PC and Si is of the order of several mm and has an electric field < 10 kV. The photoelectron emited by the photocathode multiply by a factor of several thousand in the silicon and the charge is collected on the HPD`s anode. Several types of HPD`s were tested. There was a single channel HPD, called {open_quotes}E-type{close_quotes} with p-side of the silicon facing the HPD`s photocathode and two multipixel HPD (DEP) namely a 25 pixel HPD and a 7 pixel HPD. Both were of {open_quotes}T-type{close_quotes} structure with n-side of silicon facing the photocathode.

  2. A hybrid solid-liquid polymer photodiode for the bioenvironment

    NASA Astrophysics Data System (ADS)

    Antognazza, M. R.; Ghezzi, D.; Musitelli, D.; Garbugli, M.; Lanzani, G.

    2009-06-01

    We demonstrate that a prototypical semiconducting polymer, poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) maintains unaltered its optoelectronic properties throughout the various steps for neural preparation. Films of MEH-PPV, after prolonged immersion in water or buffer solution, are characterized by linear and nonlinear optical spectroscopy. Based on this result, we introduce a hybrid solid-liquid photodiode based on MEH-PPV, in which we use culturing media as liquid, ionic cathodes. The hybrid device is proposed as an active interface between living tissue and conducting polymers for cell diagnostic and neural implants.

  3. Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

    NASA Technical Reports Server (NTRS)

    Zheng, Xinyu; Pain, Bedabrata

    2005-01-01

    A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would

  4. A novel photodiode made of hybrid organic/inorganic nanocomposite

    NASA Astrophysics Data System (ADS)

    Mahmoud, Waleed E.

    2009-08-01

    Novel hybrid organic/inorganic nanocomposites made of metal oxide and conjugated polymer nanocomposite and its application in bulk-heterojunction solar cells were studied. The composite was composed of different concentrations of strontium titanate (SrTiO3) and polyaniline doped phosphoric acid. The optimum concentration of strontium titanate was found to be 0.2 v/v. An inorganic-organic photovoltaic device with a structure of Ag/Pani-H3PO4-SrTiO3/Al has been fabricated. The ideality factor value of the diode was found to be 1.8. This n value of the diode implies a deviation from ideal junction behaviour. The barrier height phib value for the diode was found to be 0.56 eV. The Ag/Pani-H3PO4-SrTiO3/Al diode shows a photovoltaic behaviour with a maximum open-circuit voltage Voc of 2.49 V, and short-circuit current Isc of 5.6 mA under light illumination λ = 460 nm. The conversion efficiency was found to be 5.2%. It is evaluated that the Ag/Pani-H3PO4-SrTiO3/Al diode is a good photodiode with calculated electronic parameters.

  5. Using Photodiodes in the Laboratory.

    ERIC Educational Resources Information Center

    Jenkins, T. E.

    1995-01-01

    Describes the most popular optical detector in the design of photodiode detector circuits. Discusses how a photodiode works, points to consider in the design of a photodiode, and photodiode hybrids. (AIM)

  6. A slot-scanned photodiode-array/CCD hybrid detector for digital mammography.

    PubMed

    Mainprize, James G; Ford, Nancy L; Yin, Shi; Tümer, Türmay; Yaffe, Martin J

    2002-02-01

    We have developed a novel direct conversion detector for use in a slot-scanning digital mammography system. The slot-scan concept allows for dose efficient scatter rejection and the ability to use small detectors to produce a large-area image. The detector is a hybrid design with a 1.0 mm thick silicon PIN photodiode array (the x-ray absorber) indium-bump bonded to a CCD readout that is operated in time-delay integration (TDI) mode. Because the charge capacity requirement for good image quality exceeds the capabilities of standard CCDs, a novel CCD was developed. This CCD consists of 24 independent sections, each acting as a miniature CCD with eight rows for TDI. The signal from each section is combined off-chip to produce a full signal image. The MTF and DQE for the device was measured at several exposures and compared to a linear systems model of signal and noise propagation. Because of the scanning nature of TDI imaging, both the MTF(f) and DQE(f) are reduced along the direction of the scanning motion. For a 26 kVp spectrum, the DQE(0) was measured to be 0.75+/-0.02 for an exposure of 1.29 x 10(-5) C/kg (50 mR). PMID:11865992

  7. Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays

    NASA Astrophysics Data System (ADS)

    Schuette, Daniel R.; Westhoff, Richard C.; Loomis, Andrew H.; Young, Douglas J.; Ciampi, Joseph S.; Aull, Brian F.; Reich, Robert K.

    2010-04-01

    We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to a transparent support substrate followed by indium bump bonding of this layer to a signal-processing ROIC. This hybrid detector approach can be used to fabricate imagers with high-fill-factor pixels and enhanced quantum efficiency in the near infrared as well as large-pixel-count, small-pixel-pitch arrays with pixel-level signal processing. In addition, the oxide bonding is compatible with high-temperature processing steps that can be used to lower dark current and improve optical response in the ultraviolet.

  8. Results of hybrid photodiode irradiation by 200 MeV protons

    SciTech Connect

    Baumbaugh A. et al.

    2001-12-03

    Hybrid Photodiodes (HPD, [1]) will be used as the photodetector for the Compact Muon Solenoid (CMS) Hadron Calorimeter (HCAL) readout [2]. The HPDs are required to operate in a high radiation environment, where the HCAL detector will receive a total ionizing dose of about 330 rads and a fluence of 4 x 10{sup 11} n/cm{sup 2} over a 10 year running period [3]. Effects of HPD irradiation by low energy neutrons were studied and reported previously [1]. In these studies, high energy protons are used to study possible effects of single event burnout [4], since high energy protons are more likely to induce large energy transfer within the HPD silicon. The HPDs were irradiated by 200 MeV protons at the Indiana University Cyclotron Facility [IUCF, 5]. The results of the study are presented.

  9. Performance evaluation of new large-area avalanche photodiodes for scintillation spectroscopy

    NASA Astrophysics Data System (ADS)

    James, K. M.; Masterson, M. J.; Farrell, R.

    Avalanche photodiodes (APD's) appear promising for certain applications as a solid state replacement for the photomultiplier tube. The increase in leakage current and capacitance noise with device active area has in the past kept the size of commercially available devices to less than 1 mm (exp 2). Recent advances in fabrication technology have, however, resulted in relatively low noise devices of up to 1 inch in diameter. We have recently evaluated the performance as scintillation spectroscopy detectors of two commercial large area avalanche photodiodes. These APD's exhibit exceptional performance: at 662 KeV a 1 inch diameter device coupled to a CsI(Tl) scintillator and operating at room temperature yielded 6.9 pct. resolution and a 1 cm device coupled to CsI(Tl) and cooled to 260 K gave 4.4 pct. resolution, which is believed to be the best resolution ever recorded for a scintillation spectrometer.

  10. Three-element trap filter radiometer based on large active area silicon photodiodes.

    PubMed

    Salim, S G R; Anhalt, K; Taubert, D R; Hollandt, J

    2016-05-20

    This paper shows the opto-mechanical design of a new filter radiometer built at the Physikalisch-Technische Bundesanstalt, Germany, for the accurate determination of the thermodynamic temperature of high-temperature blackbodies. The filter radiometer is based on a three-element reflection-type trap detector that uses three large active area silicon photodiodes. Its spectral coverage and field of view are defined by a detachable narrow-band filter and a diamond-turned precision aperture, respectively. The temperature of the filter radiometer is stabilized using a water-streamed housing and is measured using a thin-film platinum thermometer placed onto the first photodiode element. The trap "mount" has been made as compact as possible, which, together with the large active area of the chosen photodiodes, allows a wide field of view. This work presents the design of the filter radiometer and discusses the criteria that have been considered in order for the filter radiometer to suit the application. PMID:27411121

  11. ZnO(N)-Spiro-MeOTAD hybrid photodiode: an efficient self-powered fast-response UV (visible) photosensor.

    PubMed

    Game, Onkar; Singh, Upendra; Kumari, Tanya; Banpurkar, Arun; Ogale, Satishchandra

    2014-01-01

    Organic-inorganic hybrid photo-detectors with a self-sufficient mode of operation represent a research area of great current interest. In most efficient photodetectors and optoelectronic devices compound semiconductors containing toxic elements such as Cd, As, Te, S, Se etc. are used and these are also expensive. Hence there is also a rapidly growing interest in replacing these with environmentally friendly and earth-abundant materials. Herein, we report a facile solution-processed fabrication of a self-powered organic-inorganic hybrid photodetector using n-type oriented ZnO nanorods and p-type Spiro-MeOTAD semiconductor. ZnO is eco-friendly and earth-abundant, and Spiro-MeOTAD is non-hazardous. We show that the latter has far less toxicity than the toxic elements stated above. This visible blind UV photodetector shows high sensitivity (10(2)) and a UV/visible rejection ratio of 300. It also exhibits fast response times of τ(rise) ~ 200 μs and τ(fall) ~ 950 μs. Importantly, with a small modification of nitrogen incorporation in ZnO one can also realize a highly-sensitive self-powered visible light photodetector with at least 1000% (or higher) improvements in quality factors (photocurrent/sensitivity/response time) as compared to previously reported organic-inorganic hybrid photo-detectors based on metal-chalcogenides (CdS-PANI or CuInSe2-P3HT). Interestingly, the broadband sensitivity of such N:ZnO-Spiro-MeOTAD photodiode enables sensing of low intensity (~28 μW cm(-2)) ambient white light with a high photocurrent density of 120 nA cm(-2) making it an efficient ambient white light detector. PMID:24232600

  12. ZnO(N)-Spiro-MeOTAD hybrid photodiode: an efficient self-powered fast-response UV (visible) photosensor

    NASA Astrophysics Data System (ADS)

    Game, Onkar; Singh, Upendra; Kumari, Tanya; Banpurkar, Arun; Ogale, Satishchandra

    2013-12-01

    Organic-inorganic hybrid photo-detectors with a self-sufficient mode of operation represent a research area of great current interest. In most efficient photodetectors and optoelectronic devices compound semiconductors containing toxic elements such as Cd, As, Te, S, Se etc. are used and these are also expensive. Hence there is also a rapidly growing interest in replacing these with environmentally friendly and earth-abundant materials. Herein, we report a facile solution-processed fabrication of a self-powered organic-inorganic hybrid photodetector using n-type oriented ZnO nanorods and p-type Spiro-MeOTAD semiconductor. ZnO is eco-friendly and earth-abundant, and Spiro-MeOTAD is non-hazardous. We show that the latter has far less toxicity than the toxic elements stated above. This visible blind UV photodetector shows high sensitivity (102) and a UV/visible rejection ratio of 300. It also exhibits fast response times of τrise ~ 200 μs and τfall ~ 950 μs. Importantly, with a small modification of nitrogen incorporation in ZnO one can also realize a highly-sensitive self-powered visible light photodetector with at least 1000% (or higher) improvements in quality factors (photocurrent/sensitivity/response time) as compared to previously reported organic-inorganic hybrid photo-detectors based on metal-chalcogenides (CdS-PANI or CuInSe2-P3HT). Interestingly, the broadband sensitivity of such N:ZnO-Spiro-MeOTAD photodiode enables sensing of low intensity (~28 μW cm-2) ambient white light with a high photocurrent density of 120 nA cm-2 making it an efficient ambient white light detector.Organic-inorganic hybrid photo-detectors with a self-sufficient mode of operation represent a research area of great current interest. In most efficient photodetectors and optoelectronic devices compound semiconductors containing toxic elements such as Cd, As, Te, S, Se etc. are used and these are also expensive. Hence there is also a rapidly growing interest in replacing these with

  13. A 10Gb/s transimpedance amplifier for hybrid integration of a Ge PIN waveguide photodiode

    NASA Astrophysics Data System (ADS)

    Polzer, A.; Gaberl, W.; Swoboda, R.; Zimmermann, H.; Fedeli, J.-M.; Vivien, L.

    2010-05-01

    The presented paper describes a 10 Gbps optical receiver. The transimpedance amplifier (TIA) is realized in standard 0.35 μm SiGe BiCMOS technology. The main novelty of the presented design - investigated in the European Community project HELIOS - is the hybrid connection of the optical detector. The used Germanium photodetector will be directly mounted onto the receiver. A model of the relevant parasitics of the photodetector itself and the novel connection elements (micropads, metal vias and metal lines) is described. Based on this photodetector model an optical receiver circuit was optimized for maximum sensitivity at data rates in the range of 10 Gbps. The design combines a TIA and two limiting amplifier stages followed by a 50 Ω CML-style logic-level output driver. To minimize power supply noise and substrate noise, a fully differential design is used. A dummy TIA provides a symmetrical input signal reference and a control loop is used to compensate the offset levels. The TIA is built around a common-emitter stage and features a feedback resistor of 4.2 Ω. The total transimpedance of the complete receiver chain is in the range of 275 kΩ. The value of the active feedback resistor can be reduced via an external control voltage to adapt the design to different overall gain requirements. The two limiting amplifier stages are realized as differential amplifiers with voltage followers. The output buffer is implemented with cascode differential amplifiers. The output buffer is capable of driving a differential 50Ω output with a calculated output swing of 800mVp-p. Simulations show an overall bandwidth of 7.2 GHz. The lower cutoff frequency is below 60 kHz. The equivalent input noise current is 408 nA. With an estimated total photodiode responsivity of 0.5 A/W this allows a sensitivity of around - 23.1 dBm (BER = 10-9). The device operates from a single 3.3 V power supply and the TIAs and the limiting amplifier consume 32 mA.

  14. Organic-inorganic hybrid inverted photodiode with planar heterojunction for achieving low dark current and high detectivity

    NASA Astrophysics Data System (ADS)

    Ha, JaeUn; Yoon, Seongwon; Lee, Jong-Soo; Chung, Dae Sung

    2016-03-01

    In this study, the strategy of using an organic-inorganic hybrid planar heterojunction consisting of polymeric semiconductors and inorganic nanocrystals is introduced to realize a high-performance hybrid photodiode (HPD) with low dark current and high detectivity. To prevent undesired charge injection under the reverse bias condition, which is the major dark current source of the photodiode, a well-defined planar heterojunction is strategically constructed via smart solution process techniques. The optimized HPD renders a low dark current of ˜10-5 mA cm-2 at -5 V and ˜10-6 mA cm-2 at -1 V, as well as a high detectivity ˜1012 Jones across the entire visible wavelength range. Furthermore, excellent photocurrent stability is demonstrated under continuous light exposure. We believe that the solution-processed planar heterojunction with inverted structure can be an attractive alternative diode structure for fabricating high-performance HPDs, which usually suffer from high dark current issues.

  15. Response of large area avalanche photodiodes to low energy x rays

    SciTech Connect

    Gentile, T. R.; Bales, M.; Arp, U.; Dong, B.; Farrell, R.

    2012-05-15

    For an experiment to study neutron radiative beta-decay, we operated large area avalanche photodiodes (APDs) near liquid nitrogen temperature to detect x rays with energies between 0.2 keV and 20 keV. Whereas there are numerous reports of x ray spectrometry using APDs at energies above 1 keV, operation near liquid nitrogen temperature allowed us to reach a nominal threshold of 0.1 keV. However, due to the short penetration depth of x rays below 1 keV, the pulse height spectrum of the APD become complex. We studied the response using monochromatic x ray beams and employed phenomenological fits of the pulse height spectrum to model the measurement of a continuum spectrum from a synchrotron. In addition, the measured pulse height spectrum was modelled using a profile for the variation in efficiency of collection of photoelectrons with depth into the APD. The best results are obtained with the collection efficiency model.

  16. Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

    NASA Technical Reports Server (NTRS)

    Joshi, Abhay M. (Inventor); Datta, Shubhashish (Inventor)

    2013-01-01

    A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

  17. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  18. Large-area avalanche photodiodes for the detection of soft x rays

    SciTech Connect

    Gullikson, E.M.; Gramsch, E. |; Szawlowski, M.

    1995-08-01

    The charge-collection efficiency of beveled-edge-type silicon avalanche photodiodes has been determined for soft x rays in the 50--300-eV range. An efficiency of greater than 80% is measured for energies below the Si {ital L} absorption edge. The measured efficiency is well described by a model that accounts for absorption in an oxide overlayer and recombination at the front surface of the diode. The avalanche photodiodes are shown to be significantly more sensitive compared with other detectors for pulsed sources such as a laser-produced plasma source. These results are also very encouraging for soft-x-ray/extreme-UV applications involving synchrotron radiation.{ital PACS} {ital numbers}: 29.40.Wk, 07.85.+n, 85.60.Dw.

  19. Hybrid photomultiplier tube and photodiode parallel detection array for wideband optical spectroscopy of the breast guided by magnetic resonance imaging

    PubMed Central

    Mastanduno, Michael A.; Jiang, Shudong; Pogue, Brian W.; Paulsen, Keith D.

    2013-01-01

    Abstract. A new optical parallel detection system of hybrid frequency and continuous-wave domains was developed to improve the data quality and accuracy in recovery of all breast optical properties. This new system was deployed in a previously existing system for magnetic resonance imaging (MRI)-guided spectroscopy, and allows incorporation of additional near-infrared wavelengths beyond 850 nm, with interlaced channels of photomultiplier tubes (PMTs) and silicon photodiodes (PDs). The acquisition time for obtaining frequency-domain data at six wavelengths (660, 735, 785, 808, 826, and 849 nm) and continuous-wave data at three wavelengths (903, 912, and 948 nm) is 12 min. The dynamic ranges of the detected signal are 105 and 106 for PMT and PD detectors, respectively. Compared to the previous detection system, the SNR ratio of frequency-domain detection was improved by nearly 103 through the addition of an RF amplifier and the utilization of programmable gain. The current system is being utilized in a clinical trial imaging suspected breast cancer tumors as detected by contrast MRI scans. PMID:23979460

  20. Hybrid photomultiplier tube and photodiode parallel detection array for wideband optical spectroscopy of the breast guided by magnetic resonance imaging.

    PubMed

    El-Ghussein, Fadi; Mastanduno, Michael A; Jiang, Shudong; Pogue, Brian W; Paulsen, Keith D

    2014-01-01

    A new optical parallel detection system of hybrid frequency and continuous-wave domains was developed to improve the data quality and accuracy in recovery of all breast optical properties. This new system was deployed in a previously existing system for magnetic resonance imaging (MRI)-guided spectroscopy, and allows incorporation of additional near-infrared wavelengths beyond 850 nm, with interlaced channels of photomultiplier tubes (PMTs) and silicon photodiodes (PDs). The acquisition time for obtaining frequency-domain data at six wavelengths (660, 735, 785, 808, 826, and 849 nm) and continuous-wave data at three wavelengths (903, 912, and 948 nm) is 12 min. The dynamic ranges of the detected signal are 105 and 106 for PMT and PD detectors, respectively. Compared to the previous detection system, the SNR ratio of frequency-domain detection was improved by nearly 103 through the addition of an RF amplifier and the utilization of programmable gain. The current system is being utilized in a clinical trial imaging suspected breast cancer tumors as detected by contrast MRI scans. PMID:23979460

  1. Hybrid photodiode tube

    SciTech Connect

    Desalvo, R.

    1992-12-31

    A new kind of light detector is needed for the spaghetti calorimeter capable of covering a span of a least 4 order of magnitude of linearity. Here, the authors report the first test results on a new breed of light detector based on a photocathode followed by a silicon diode working in the bombarding mode.

  2. I-V and noise performance in MWIR to VLWIR large area Hg1-xCdxTe photodiodes

    NASA Astrophysics Data System (ADS)

    D'Souza, A. I.; Stapelbroek, M. G.; Dolan, P. N.; Wijewarnasuriya, P. S.; Boehmer, E.; Smith, D. S.; Ehlert, J. C.; Andrews, J. E.

    2005-05-01

    The National Polar-orbiting Operational Environmental Satellite System (NPOESS), is overseen by the Integrated Program Office (IPO), a joint effort of the Department of Defense, Department of Commerce and NASA. One of the instruments on the NPOESS satellite is the Cross-track Infrared Sounder (CrIS) instrument. CrIS is a Fourier Transform interferometric infrared (FTIR) sensor used to measure earth radiance at high spectral resolution to derive pressure, temperature, and moisture profiles of the atmosphere from the ground on up. Each CrIS instrument contains three different cutoff wavelength (λc)focal plane modules (FPMs): an SWIR FPM [λc(98 K) ~ 5 mm], MWIR FPM [λc(98 K) ~ 9 mm] and a LWIR FPM [λc(81 K) ~ 15.5 mm]. There are nine large (850 mm diameter) photodiodes per FPM, the nine detectors being arranged in a 3 x 3 array. The nine detectors are placed under tight tolerances in the X, Y, and Z dimensions. The steps involved in the transfer of photodiodes as part of a newly fabricated wafer to the mounting of the photodiodes on the FPM involves many processing steps including a significant amount of dicing, cleaning, wire bonding and baking at elevated temperatures. Quantum efficiency and 1/f noise in Hg1-xCdxTe photodiodes are critical parameters that limit the sensitivity of infrared sounders. The ratio α, defined as the noise current in unit bandwidth in(f = 1 Hz, Vd, Δf = 1 Hz) to the dark current Id(Vd), that is, α = in/Id is one of the parameters used to select photodiodes for placement in FPMs. α is equivalent to √αH/N that appears in the well-known Hooge expression. For the sixty-one, λc ~ 9 μm photodiodes measured at 60 mV reverse bias and at 98 K, the average value of αdark = 1.3 x 10-4 in the dark and αPHOTO = in/IPHOTO is ~ 2 x 10-6 under illuminated conditions. These values of α are a factor of two lower than that reported previously. The λc ~ 15.5 μm photodiodes have average αdark = 1.3 x 10-5 with the highest performance

  3. Application of pulsed UV laser for dicing of arrays and linear of photodiodes based on MCT solid solution

    NASA Astrophysics Data System (ADS)

    Novoselov, A. R.; Klimenko, A. G.; Vasilyev, V. V.

    2007-05-01

    The modern systems of vision in infrared spectrum (IR) require elaboration of large-area nondefective imaging area with small pitch (less 40 μm) IR FPA. One of the directions is fabrication hybrid FPA, consisting of several of arrays of photodiodes based on MCT films (Hg xCd 1-xTe on GaAs substrates) and readout circuits on silicon. Substitution of photodiodes array of large-area imaging area on few arrays of smaller image size, allows having the imaging area of the required size without fault pixels. The main requirement is the permanent period of photodetectors on component imaging areas. without loss of pixels on lines of gaps of the butting between arrays. Using concentrated laser radiation, for scribing the surfaces MCT film on GaAs substrate, under concrete conditions, allows to realize offered above direction. The determination of the border of zone of the influence of the laser radiation on electric characteristic of p-n junction of the MCT films and technological ways of the reduction of area of influence of the laser radiation are presented in work. We had studied the change of parameters of photodiodes on base MCT films depending on distances before laser dicing grooves and condition of the laser radiation. As source of the laser radiation we used pulsed UV laser (LGI-21) at 0,34 μm wavelength with pulse duration 7 ns, frequency of repetition 50 - 100 Hz and power in pulse 2 KW. We founded condition of the laser dicing on distances 18 - 20 μm from photodiodes, when initial current-voltage characteristics of photodiodes are saved. We designed method of the laser dicing of linear photodiodes on MCT films, and we used it to create of multichips hybrid IR FPA. The result is non damage dicing of linear photodiodes on MCT films (λ c =12 μm) on distances 18 - 20 μm from p-n junctions.

  4. Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes

    NASA Astrophysics Data System (ADS)

    Mok, K. R. C.; Qi, L.; Vlooswijk, A. H. G.; Nanver, L. K.

    2015-09-01

    In this work, a double-layer Al metallization scheme for large-area photodiodes is presented. This scheme combines a self-alignment of two separate layers of sputtered Al with an anodic Al2O3 as the intermediate insulating layer. One initial patterning step, that could be performed litho-less by for example laser ablation, was needed to define and etch cavities. The cavities provided two Si levels, each of which was contacted by one of the metal layers. Measurement results of test structures showed the effectiveness of this metallization scheme. Despite being partially anodized, the underlying Al layer remained a good conducting layer, with normal low-ohmic behavior. The anodized Al2O3 layer itself acted as a good insulating layer and the two metal layers were not shorted. Furthermore, the characteristics of diodes formed in the textured cavity were as ideal as the planar counterparts. The large two-dimensional coverage of both the anode and cathode by separate metal layers is a promising configuration for low series resistance. Moreover, all steps involved are available on standard integrated circuit (IC) processing equipment, and Al is an abundant cheap metal, making this a very low-cost method of fabricating contacts to large-area devices.

  5. Gallium-based avalanche photodiode optical crosstalk

    NASA Astrophysics Data System (ADS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-11-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time.

  6. Interface Trap States in Organic Photodiodes

    PubMed Central

    Arca, Francesco; Tedde, Sandro F.; Sramek, Maria; Rauh, Julia; Lugli, Paolo; Hayden, Oliver

    2013-01-01

    Organic semiconductors are attractive for optical sensing applications due to the effortless processing on large active area of several cm2, which is difficult to achieve with solid-state devices. However, compared to silicon photodiodes, sensitivity and dynamic behavior remain a major challenge with organic sensors. Here, we show that charge trapping phenomena deteriorate the bandwidth of organic photodiodes (OPDs) to a few Hz at low-light levels. We demonstrate that, despite the large OPD capacitances of ~10 nF cm−2, a frequency response in the kHz regime can be achieved at light levels as low as 20 nW cm−2 by appropriate interface engineering, which corresponds to a 1000-fold increase compared to state-of-the-art OPDs. Such device characteristics indicate that large active area OPDs are suitable for industrial sensing and even match medical requirements for single X-ray pulse detection in the millisecond range. PMID:23429565

  7. Experimental study on photodiode damage by millisecond pulse laser irradiation

    NASA Astrophysics Data System (ADS)

    Wei, Zhi; Jin, Guangyong; Tan, Yong; Wang, Di

    2015-10-01

    The photoelectric detector is a very significance part in laser and its application system, but when photoelectric detector irradiated by high energy laser, the laser may cause thermal damage to the photoelectric detector, when the temperature more than its melting point and vaporization point, there will be a permanent damage in PIN photodetector, leading to the failure of photoelectric detector. In order to study the photodiode damage mechanism by millisecond pulse laser irradiation, a set of experimental system has been built, choosing appropriate pulsed laser parameters to irradiate silicon-based PIN photodiode and monitoring the surface temperature in the process of irradiation, until the PIN photodiode complete failure. The measurement results of real-time temperature, responsivity change and damage morphology were analyzed to conclude the failure reason of the PIN photodiode. The results showed that with the increase of laser energy, the PIN photodiode surface temperature would be also increased accordingly. Before the laser irradiation, the responsivity of PIN photodiode was the same. But after the laser irradiation, the responsivity of the PIN photodiode would be changed and with the increase of laser energy, the decline extent of responsivity would be also increased. Judging from the ablation, crack and fold zone on the surface of PIN photodiode after the laser irradiation, the damage was for thermal stress effect. The continuity of material confined its free expansion. Therefore, the uneven thermal expansion induced the great thermal stress. At the same time, the silicon transited from brittle to ductile and the yield strength dramatically decreased. Once the maximum thermal stress exceeded the critical stress, the plastic deformation and the brittle cracks of silicon would be generated. With the increase of laser energy, the thermal stress damage extent of PIN photodiode would be also increased accordingly and the black area of laser ablation would be

  8. Study of EUV and x-ray radiation hardness of silicon photodiodes

    NASA Astrophysics Data System (ADS)

    Zabrodsky, Vladimir V.; Aruev, Pavel; Filimonov, Vladimir V.; Sobolev, Nikolay A.; Sherstnev, Evgeniy V.; Belik, Viktor P.; Nikolenko, Anton D.; Ivlyushkin, Denis V.; Pindyurin, Valery F.; Shadrin, Nikita S.; Soldatov, Artem E.; Mashkovtsev, Mikhail R.

    2013-05-01

    This work presents the results of long-term observation of the silicon photodiodes spatial profile response and the silicon photodiodes dark current after their exposure to 10.2 eV quanta and in the spectral range of 150-300 eV. Exposure of the photodiodes to quanta of an energy of 10.2 eV was repeated. Several other photodiodes have been irradiated in the spectral range of 700-1800 eV with a dose of 8 J/cm2. The spatial profile of the irradiated photodiodes was studied with 3.49 eV, 10.2 eV and 100 eV quanta. The effect of the recovery of the response spatial profile has been proved for the p+-n diode. An additional useful method of visualization of irradiated photodiode area is also presented.

  9. Cost Effective Simulation of the Hybrid Solar/wind and Diesel Energy System in Rural Area

    NASA Astrophysics Data System (ADS)

    Sim, Ee. Y.; Barsoum, Nader

    2008-10-01

    This paper describes the optimization of a hybrid energy system model. Currently in Sarawak, people living in the rural areas still depend on diesel generators to generate electricity. This increases the demand for fossil fuel, creates noise pollution and toxic gas is emitted to the environment. Hence, hybrid energy systems were introduced to replace this conventional energy system as well as improving the living standard in the villages. In this paper, several hybrid energy system configurations were investigated in order to find out the most cost effective hybrid system through Hybrid Optimization Model for Electric Renewability (Homer) software. Homer simulates, optimizes, and analyzes the sensitivity variables for each of the system configurations.

  10. Synchronous Photodiode-Signal Sampler

    NASA Technical Reports Server (NTRS)

    Primus, Howard K.

    1988-01-01

    Synchronous sampling circuit increases signal-to-noise ratio of measurements of chopped signal of known phase and frequency in presence of low-frequency or dc background noise. Used with linear array of photoelectric sensors for locating edge of metal plate. Multiplexing circuit cycles through 16 light-emitting-diode/photodiode pairs, under computer control. Synchronized with multiplexer so edge detector makes one background-subtracted signal measurement per emitter/detector pair in turn.

  11. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    SciTech Connect

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-12-07

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  12. Ultraviolet avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    McClintock, Ryan; Razeghi, Manijeh

    2015-08-01

    The III-Nitride material system is rapidly maturing; having proved itself as a material for LEDs and laser, and now finding use in the area of UV photodetectors. However, many UV applications are still dominated by the use of photomultiplier tubes (PMT). PMTs are capable of obtaining very high sensitivity using internal electron multiplication gain (typically ~106). It is highly desirable to develop a compact semiconductor-based photodetector capable of realizing this level of sensitivity. In principle, this can be obtained in III-Nitrides by taking advantage of avalanche multiplication under high electric fields - typically 2.7 MV/cm, which with proper design can correspond to an external reverse bias of less than 100 volts. In this talk, we review the current state-of-the-art in III-Nitride solar- and visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.

  13. A motion gesture sensor using photodiodes with limited field-of-view.

    PubMed

    Kim, Yong Sin; Baek, Kwang-Hyun

    2013-04-22

    This paper presents a low-power and small-size motion gesture sensor (MGS) based on an active infrared (IR) proximity sensor. While conventional proximity-based MGSs require two LEDs (the most power-hungry components) and one photodiode, the proposed MGS eliminates one of LEDs at the expense of an additional photodiode as a separate channel. In conjunction with an optical block that limits the field-of-view of each photodiode, the power consumption and area of the proposed MGS can be reduced by up to 52% and 69%, respectively, compared with conventional proximity-based MGSs. Optical simulation and test results validate theoretical analysis presented. PMID:23609631

  14. Hybrid and Online Climate Instruction at Madison Area Technical College

    NASA Astrophysics Data System (ADS)

    Lindstrom, S. S.; Lazzara, M. A.; Harkey, M. K.; Lynds, S. E.

    2012-12-01

    A NASA-funded initiative to develop climate instruction to underserved populations, such as those enrolled in Community Colleges, has funded the development of a hybrid and an online class on Climate and Climate Change. We will present here the class structure, topics, results from the first course offering and plans for future improvement, as well as a discussion of differences resulting from course delivery format. Because this class was offered in Wisconsin, some of the readings focused on possible agricultural changes due to changing climate as well as how the climate normals changed this year. The class also sponsored two internships for students at Madison's local Electric/Gas supplier, and how that furthered their education will be discussed as well.

  15. Polarization switch of four-wave mixing in large mode area hybrid photonic crystal fibers.

    PubMed

    Petersen, Sidsel R; Alkeskjold, Thomas T; Olausson, Christina B; Lægsgaard, Jesper

    2015-02-15

    Degenerate spontaneous four-wave mixing is considered in a large mode area hybrid photonic crystal fiber. Numerical and experimental results show birefringence assisted four-wave mixing for a certain polarization state of the pump field. The parametric gain can be turned on and off by switching the polarization state of the pump field between the two principal axis of the hybrid photonic crystal fiber. PMID:25680131

  16. Scholarly Communication and Network Influences in the Hybrid Problem Area of Developmental Dyslexia.

    ERIC Educational Resources Information Center

    Perry, Claudia A.; Rice, Ronald E.

    1996-01-01

    A scientific communication model of the emergence of a hybrid research area was tested on 74 researchers in the field of developmental dyslexia. Results show support for a model of Mulkay's model branching instead of Kuhn's model of scientific revolution; evidence points to divergence rather than convergence among the related research areas.…

  17. Note: Effect of photodiode aluminum cathode frame on spectral sensitivity in the soft x-ray energy band

    SciTech Connect

    McGarry, M. B. Den Hartog, D. J.; Goetz, J. A.; Johnson, J.; Franz, P.

    2014-09-15

    Silicon photodiodes used for soft x-ray detection typically have a thin metal electrode partially covering the active area of the photodiode, which subtly alters the spectral sensitivity of the photodiode. As a specific example, AXUV4BST photodiodes from International Radiation Detectors have a 1.0 μm thick aluminum frame covering 19% of the active area of the photodiode, which attenuates the measured x-ray signal below ∼6 keV. This effect has a small systematic impact on the electron temperature calculated from measurements of soft x-ray bremsstrahlung emission from a high-temperature plasma. Although the systematic error introduced by the aluminum frame is only a few percent in typical experimental conditions on the Madison Symmetric Torus, it may be more significant for other instruments that use similar detectors.

  18. Note: Effect of photodiode aluminum cathode frame on spectral sensitivity in the soft x-ray energy band

    NASA Astrophysics Data System (ADS)

    McGarry, M. B.; Franz, P.; Den Hartog, D. J.; Goetz, J. A.; Johnson, J.

    2014-09-01

    Silicon photodiodes used for soft x-ray detection typically have a thin metal electrode partially covering the active area of the photodiode, which subtly alters the spectral sensitivity of the photodiode. As a specific example, AXUV4BST photodiodes from International Radiation Detectors have a 1.0 μm thick aluminum frame covering 19% of the active area of the photodiode, which attenuates the measured x-ray signal below ˜6 keV. This effect has a small systematic impact on the electron temperature calculated from measurements of soft x-ray bremsstrahlung emission from a high-temperature plasma. Although the systematic error introduced by the aluminum frame is only a few percent in typical experimental conditions on the Madison Symmetric Torus, it may be more significant for other instruments that use similar detectors.

  19. Electronic hybridization of large-area stacked graphene films.

    PubMed

    Robinson, Jeremy T; Schmucker, Scott W; Diaconescu, C Bogdan; Long, James P; Culbertson, James C; Ohta, Taisuke; Friedman, Adam L; Beechem, Thomas E

    2013-01-22

    Direct, tunable coupling between individually assembled graphene layers is a next step toward designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the fabrication and characterization of large-area (>cm(2)), coupled bilayer graphene on SiO(2)/Si substrates. Stacking two graphene films leads to direct electronic interactions between layers, where the resulting film properties are determined by the local twist angle. Polycrystalline bilayer films have a "stained-glass window" appearance explained by the emergence of a narrow absorption band in the visible spectrum that depends on twist angle. Direct measurement of layer orientation via electron diffraction, together with Raman and optical spectroscopy, confirms the persistence of clean interfaces over large areas. Finally, we demonstrate that interlayer coupling can be reversibly turned off through chemical modification, enabling optical-based chemical detection schemes. Together, these results suggest that 2D crystals can be individually assembled to form electronically coupled systems suitable for large-scale applications. PMID:23240977

  20. Scholarly Communication in Developmental Dyslexia: Influence of Network Structure on Change in a Hybrid Problem Area.

    ERIC Educational Resources Information Center

    Perry, Claudia A.; Rice, Ronald E.

    1998-01-01

    Based on Mulkay's and Kuhn's models of change in scientific structure, a scientific communication model of the emergence of a hybrid research area was developed and tested in the field of developmental dyslexia; 74 researchers were partitioned into "blocks" of similar scientists. Results show support for Mulkay's model of branching instead of…

  1. Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor.

    PubMed

    Nikitskiy, Ivan; Goossens, Stijn; Kufer, Dominik; Lasanta, Tania; Navickaite, Gabriele; Koppens, Frank H L; Konstantatos, Gerasimos

    2016-01-01

    The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector device by integrating a colloidal quantum dot photodiode atop a graphene phototransistor. Our hybrid detector overcomes the limitations of a phototransistor in terms of speed, quantum efficiency and linear dynamic range. We report quantum efficiencies in excess of 70%, gain of 10(5) and linear dynamic range of 110 dB and 3 dB bandwidth of 1.5 kHz. This constitutes a demonstration of an optoelectronically active device integrated directly atop graphene and paves the way towards a generation of flexible highly performing hybrid two-dimensional (2D)/0D optoelectronics. PMID:27311710

  2. Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor

    PubMed Central

    Nikitskiy, Ivan; Goossens, Stijn; Kufer, Dominik; Lasanta, Tania; Navickaite, Gabriele; Koppens, Frank H. L.; Konstantatos, Gerasimos

    2016-01-01

    The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector device by integrating a colloidal quantum dot photodiode atop a graphene phototransistor. Our hybrid detector overcomes the limitations of a phototransistor in terms of speed, quantum efficiency and linear dynamic range. We report quantum efficiencies in excess of 70%, gain of 105 and linear dynamic range of 110 dB and 3 dB bandwidth of 1.5 kHz. This constitutes a demonstration of an optoelectronically active device integrated directly atop graphene and paves the way towards a generation of flexible highly performing hybrid two-dimensional (2D)/0D optoelectronics. PMID:27311710

  3. Photodiode-Based, Passive Ultraviolet Dosimeters

    NASA Technical Reports Server (NTRS)

    Vaughn, Jason A.; Gray, Perry

    2004-01-01

    Simple, passive instruments have been developed for measuring the exposure of material specimens to vacuum ultraviolet (VUV) radiation from the Sun. Each instrument contains a silicon photodiode and a coulometer. The photocharge generated in the photodiode is stored in the coulometer. The accumulated electric charge measured by use of the coulometer is assumed to be proportional to the cumulative dose of VUV radiation expressed in such convenient units as equivalent Sun hours (ESH) [defined as the number of hours of exposure to sunlight at normal incidence]. Intended originally for use aboard spacecraft, these instruments could also be adapted to such terrestrial uses as monitoring the curing of ultraviolet-curable epoxies. Each instrument includes a photodiode and a coulometer assembly mounted on an interface plate (see figure). The photodiode assembly includes an aluminum housing that holds the photodiode, a poly(tetrafluoroehylene) cosine receptor, and a narrow-band optical filter. The cosine receptor ensures that the angular response of the instrument approximates the ideal angular response (proportional to the cosine of the angle of incidence). The filter is chosen to pass the ultraviolet wavelength of interest in a specific experiment. The photodiode is electrically connected to the coulometer. The factor of proportionality between the charge stored in the coulometer and ultraviolet dosage (in units of ESH) is established, prior to use, in calibration experiments that involve the use of lamps and current sources traceable to the National Institute of Standards and Technology.

  4. Sustainable electricity generation by solar pv/diesel hybrid system without storage for off grids areas

    NASA Astrophysics Data System (ADS)

    Azoumah, Y.; Yamegueu, D.; Py, X.

    2012-02-01

    Access to energy is known as a key issue for poverty reduction. The electrification rate of sub Saharan countries is one of the lowest among the developing countries. However this part of the world has natural energy resources that could help raising its access to energy, then its economic development. An original "flexy energy" concept of hybrid solar pv/diesel/biofuel power plant, without battery storage, is developed in order to not only make access to energy possible for rural and peri-urban populations in Africa (by reducing the electricity generation cost) but also to make the electricity production sustainable in these areas. Some experimental results conducted on this concept prototype show that the sizing of a pv/diesel hybrid system by taking into account the solar radiation and the load/demand profile of a typical area may lead the diesel generator to operate near its optimal point (70-90 % of its nominal power). Results also show that for a reliability of a PV/diesel hybrid system, the rated power of the diesel generator should be equal to the peak load. By the way, it has been verified through this study that the functioning of a pv/Diesel hybrid system is efficient for higher load and higher solar radiation.

  5. Optical receivers with large-diameter photodiode

    NASA Astrophysics Data System (ADS)

    Swoboda, Robert; Schneider, Kerstin; Zimmermann, Horst

    2006-04-01

    This work presents two types of optical receivers with large-diameter photodiodes. Both are optoelectronic integrated circuits (OEICs) realized in 0.6μm BiCMOS Si technology integrating PIN photodiode, transimpedance amplifier (TIA) and output circuit on chip. The two circuits are an optocoupler with a photodiode diameter of 780μm and a rise- and falltime of 5ns and 4.9ns respectively at 850nm light and a plastic optical fiber (POF) receiver with a photodiode diameter of 500μm and upper -3dB cut-off frequencies of 165MHz at 660nm light and 148MHz at 850nm light. The measured rise- and falltime of the POF receiver was 1.78ns and 2.45ns at 660nm light and 1.94ns and 2.5ns at 850ns, respectively. The presented results combine the advantage of easier handling of large-diameter photodiode receivers and high performance.

  6. Vertical Isolation for Photodiodes in CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata

    2008-01-01

    In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

  7. Photon counting modules using RCA silicon avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Lightstone, Alexander W.; Macgregor, Andrew D.; Macsween, Darlene E.; Mcintyre, Robert J.; Trottier, Claude; Webb, Paul P.

    1989-01-01

    Avalanche photodiodes (APD) are excellent small area, solid state detectors for photon counting. Performance possibilities include: photon detection efficiency in excess of 50 percent; wavelength response from 400 to 1000 nm; count rate to 10 (exp 7) counts per sec; afterpulsing at negligible levels; timing resolution better than 1 ns. Unfortunately, these performance levels are not simultaneously available in a single detector amplifier configuration. By considering theoretical performance predictions and previous and new measurements of APD performance, the anticipated performance of a range of proposed APD-based photon counting modules is derived.

  8. Study of Oil spill in Norwegian area using Decomposition Techniques on RISAT-1 Hybrid Polarimetric Data.

    NASA Astrophysics Data System (ADS)

    Jayasri, P. V.; Usha Sundari, H. S. V.; Kumari, E. V. S. Sita; Prasad, A. V. V.

    2014-11-01

    Over past few years Synthetic Aperture Radar(SAR) has received a considerable attention for monitoring and detection of oil spill due to its unique capabilities to provide wide-area surveillance and day and night measurements, almost independently from atmospheric conditions. The critical part of the oil spill detection is to distinguish oil spills from other natural phenomena. Stokes vector analysis of the image data is studied to estimate the polarized circular and linear components of the backscatter signal which essentially utilize the degree of polarization(m) and relative phase (δ) of the target. In a controlled oil spill experiment conducted at Norwegian bay during 17th to 22nd June 2014, RISAT-1 hybrid polarimetry images were utilized to study the characteristics of oil spill in the sea. The preliminary results obtained by using polarimetric decomposition technique on hybrid polarimetric data to decipher the polarimetric characteristics of oil spills from natural waters are discussed in the paper.

  9. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOEpatents

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  10. Optical Demonstrations with a Scanning Photodiode Array.

    ERIC Educational Resources Information Center

    Turman, Bobby N.

    1980-01-01

    Describes the photodiode array and the electrical connections necessary for it. Also shows a few of the optical demonstration possibilities-shadowgraphs for measuring small objects, interference and diffraction effects, angular resolution of an optical system, and a simple spectrometer. (Author/DS)

  11. MRS photodiode in strong magnetic field

    SciTech Connect

    Beznosko, D.; Blazey, G.; Dyshkant, A.; Francis, K.; Kubik, D.; Rykalin, V.; Tartaglia, M.A.; Zutshi, v.; /Northern Illinois U.

    2004-12-01

    The experimental results on the performance of the MRS (Metal/Resistor/Semiconductor) photodiode in the strong magnetic field of 4.4T, and the possible impact of the quench of the magnet at 4.5T on sensor's operation are reported.

  12. Study of hybrid power system potential to power agricultural water pump in mountain area

    NASA Astrophysics Data System (ADS)

    Syuhada, Ahmad; Mubarak, Amir Zaki; Maulana, M. Ilham

    2016-03-01

    As industry and Indonesian economy grow fast, there are a lot of agricultural land has changed into housing and industrial land. This causes the agricultural land moves to mountain area. In mountainous agricultural area, farmers use the water resources of small rivers in the groove of the mountain to irrigate the farmland. Farmers use their power to lift up water from the river to their land which causes inefectivity in the work of the farmers. Farmers who have capital utilize pump to raise water to their land. The only way to use pump in mountain area is by using fuel energy as there is no electricity, and the fuel price in mountain area is very expensive. Based on those reasons it is wise to consider the exploration of renewable energy available in the area such as solar energy, wind energy and hybrid energy. This study analyses the potential of the application of hybrid power plant, which is the combination of solar and wind energy, to power agricultural pump. In this research, the data of wind speed and solar radiation are collected from the measurement of BMKG SMPK Plus Sare. Related to the solar energy, the photovoltaic output power calculation is 193 W with duration of irradiation of 5 hours/day. While for the wind energy, the output power of the wind turbine is 459.84 W with blade diameter of 3 m and blow duration of 7 hours/day. The power of the pump is 558 W with 8 hours of usage, and the water capacity is 2.520 liters/hour for farmland with the area of 15 ha. Based on the analysis result, the designed system will generate electricity of 3.210 kW/year with initial investment of US 14,938.

  13. 4H-SiC Schottky photodiodes for ultraviolet flame detection

    NASA Astrophysics Data System (ADS)

    Mazzillo, M.; Sciuto, A.

    2015-10-01

    In the last few years silicon carbide (SiC) has emerged as an appropriate material for the detection of very low ultraviolet photon fluxes even at elevated temperatures. In this paper we report on the electro-optical characteristics of large area interdigit Ni2Si/4H-SiC photodiodes in TO metal can package with a suitable molded cap quartz window with high transmission in the ultraviolet wavelength range. The detectors have been tested for the detection of the ultraviolet component of the yellow flame emitted by a small candle, showing good sensitivity for very weak photon fluxes notwithstanding the linear operation condition of the photodiodes.

  14. Experimental characterization of peripheral photocurrent in CMOS photodiodes down to 65 nm technology

    NASA Astrophysics Data System (ADS)

    Blanco-Filgueira, B.; López, P.; Roldán, J. B.

    2013-04-01

    In this work, an in-depth experimental characterization of submicron CMOS p-n+ junction photodiodes operating under uniform illumination in the visible range is performed. The experimental measurements are used to validate a previous two-dimensional analytical model for the photoresponse estimation of these structures, which pays special attention to the lateral collection and was verified by means of device simulations. To do so, square p-n+ junction photodiodes with different sizes down to an active area of 0.56 μm wide have been fabricated in 180 and 65 nm technological nodes and characterized under blue, green and red light sources. As a result, the importance of the lateral collection in the overall response for small photodiodes that was previously theoretically reported is confirmed. The experimentally validated two-dimensional analytical model is a powerful tool that can be employed for the design of CMOS imagers and related electronics circuits.

  15. Producibility of Vertically Integrated Photodiode (VIP)tm scanning focal plane arrays

    NASA Astrophysics Data System (ADS)

    Turner, Arthur M.; Teherani, Towfik; Ehmke, John C.; Pettitt, Cindy; Conlon, Peggy; Beck, Jeffrey D.; McCormack, Kent; Colombo, Luigi; Lahutsky, Tom; Murphy, Terry; Williams, Robert L.

    1994-07-01

    Vertically integrated photodiode, VIPTM, technology is now being used to produce second generation infrared focal plane arrays with high yields and performance. The VIPTM process employs planar, ion implanted, n on p diodes in HgCdTe which is epoxy hybridized directly to the read out integrated circuits on 100 mm Si wafers. The process parameters that are critical for high performance and yield include: HgCdTe dislocation density and thickness, backside passivation, frontside passivation, and junction formation. Producibility of infrared focal plane arrays (IRFPAs) is also significantly enhanced by read out integrated circuits (ROICs) which have the ability to deselect defective pixels. Cold probe screening before lab dewar assembly reduces costs and improves cycle times. The 240 X 1 and 240 X 2 scanning array formats are used to demonstrate the effect of process optimization, deselect, and cold probe screening on yield and cycle time. The versatility of the VIPTM technology and its extension to large area arrays is demonstrated using 240/288 X 4 and 480 X 5 TDI formats. Finally, the high performance of VIPTM IRFPAs is demonstrated by comparing data from a 480 X 5 to the SADA-II specification.

  16. Large-Format AlGaN PIN Photodiode Arrays for UV Images

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Franz, David

    2010-01-01

    A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

  17. Degenerate four wave mixing in large mode area hybrid photonic crystal fibers.

    PubMed

    Petersen, Sidsel R; Alkeskjold, Thomas T; Lægsgaard, Jesper

    2013-07-29

    Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions. PMID:23938682

  18. Type-II Superlattice Avalanche Photodiodes

    NASA Astrophysics Data System (ADS)

    Huang, Jun

    Type-II superlattice avalanche photodiodes have shown advantages compared to conventional mercury cadmium telluride photodiodes for infrared wavelength detection. However, surface or interface leakage current has been a major issue for superlattice avalanche photodiodes, especially in infrared wavelength region. First, passivation of the superlattice device with ammonium sulfide and thioacetamide was carried out, and its surface quality was studied by X-ray Photoelectron Spectroscopy. The study showed that both ammonium sulfide and thiacetamide passivation can actively remove the native oxide at the surface. Thiacetamide passivation combine more sulfur bonds with III-V elements than that of ammonium sulfide. Another X-ray photoelectron spectra of thiacetamide-treated atomic layer deposited zinc sulfide capped InAs/GaSb superlattice was performed to investigate the interface sulfur bond conditions. Sb--S and As--S bonds disappear while In-S bond gets enhanced, indicating that Indium Sulfide should be the major components at the interface after ZnS deposition. Second, the simulation of electrical characteristics for zinc sulfide, silicon nitride and silicon dioxide passivated superlattice devices was performed by SILVACO software to fit the experimental results and to discover the surface current mechanism. Different surface current mechanism strengths were found. Third, several novel dual-carrier avalanche photodiode structures were designed and simulated. The structures had alternate carrier multiplication regions, placed next to a wider electron multiplication region, creating dual-carrier multiplication feedback systems. Gain and excess noise factor of these structures were simulated and compared based on the dead space multiplication theory under uniform electric field. From the simulation, the applied bias can be greatly lowered or the thickness can be shrunk to achieve the same gain from the conventional device. The width of the thin region was the most

  19. High Performance Photodiode Based on p-Si/Copper Phthalocyanine Heterojunction.

    PubMed

    Zhong, Junkang; Peng, Yingquan; Zheng, Tingcai; Lv, Wenli; Ren, Qiang; Fobao, Huang; Ying, Wang; Chen, Zhen; Tang, Ying

    2016-06-01

    Hybrid organic-inorganic (HOI) photodiodes have both advantages of organic and inorganic materials, including compatibility of traditional Si-based semiconductor technology, low cost, high photosensitivity and high reliability, showing tremendous value in application. Red light sensitive HOI photodiodes based on the p-Si/copper phthalocyanine (CuPc) hetrojunction were fabricated and characterized. The effects of CuPc layer thickness on the performance were investigated, and an optimal layer thickness of around 30 nm was determined. An analytical expression is derived to describe the measured thickness dependence of the saturation photocurrent. For the device with optimal CuPc layer thickness, a photoresponsivity of 0.35 A/W and external quantum efficiency of 70% were obtained at 9 V reverse voltage bias and 655 nm light illumination of 0.451 mW. Furthermore, optical power dependent performances were investigated. PMID:27427631

  20. Large-area, freestanding, single-layer graphene-gold: a hybrid plasmonic nanostructure.

    PubMed

    Iyer, Ganjigunte R Swathi; Wang, Jian; Wells, Garth; Guruvenket, Srinivasan; Payne, Scott; Bradley, Michael; Borondics, Ferenc

    2014-06-24

    Graphene-based plasmonic devices have recently drawn great attention. However, practical limitations in fabrication and device architectures prevent studies from being carried out on the intrinsic properties of graphene and their change by plasmonic structures. The influence of a quasi-infinite object (i.e., the substrate) on graphene, being a single sheet of carbon atoms, and the plasmonic device is overwhelming. To address this and put the intrinsic properties of the graphene-plasmonic nanostructures in focus, we fabricate large-area, freestanding, single-layer graphene-gold (LFG-Au) sandwich structures and Au nanoparticle decorated graphene (formed via thermal treatment) hybrid plasmonic nanostructures. We observed two distinct plasmonic enhancement routes of graphene unique to each structure via surface-enhanced Raman spectroscopy. The localized electronic structure variation in the LFG due to graphene-Au interaction at the nanoscale is mapped using scanning transmission X-ray microscopy. The measurements show an optical density of ∼0.007, which is the smallest experimentally determined for single-layer graphene thus far. Our results on freestanding graphene-Au plasmonic structures provide great insight for the rational design and future fabrication of graphene plasmonic hybrid nanostructures. PMID:24860924

  1. Fabrication of large-area arrays of hybrid nanostructures on polymer-derived chemically patterned surfaces

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoying; Nepal, Dhriti; Biswas, Sushmita; Park, Kyoungweon; Vaia, Richard; Nealey, Paul; Air Force Research Laboratories Collaboration; University of Chicago Team

    2014-03-01

    The precise placement and assembly of nanoparticles (NPs) into large-area nanostructure arrays will allow for the design and implementation of advanced nanoscale devices for applications in fields such as quantum computing, optical sensing, superlenses, photocatalysis, photovoltaics, and non-linear optics. Our work is focused on using chemically nanopatterned surfaces to fabricate arrays of hybrid nanostructures with each component of the building block at well-defined positions. The precise chemical contrast patterns with densities and resolution of features created using standard tools of lithography, polymer self-assembly, and surface functionalization allow for control of position and interparticle spacing through selective surface-particle and particle-particle interactions. We have demonstrated the assembly of NPs, including metallic NPs and semiconductor quantum dots, into arrays of hybrid structures with various geometries, such as monomers, dimers, quatrefoils, stripes, and chains. We have developed protocols to fabricate NP arrays over a variety of substrates, which allows for the design and characterization of optical and electronic nanostructures and devices to meet the requirements of various technological applications.

  2. Hybrid multiphase CFD simulation for liquid-liquid interfacial area prediction in annular centrifugal contactors

    SciTech Connect

    Wardle, K.E.

    2013-07-01

    Liquid-liquid contacting equipment used in solvent extraction processes has the dual purpose of mixing and separating two immiscible fluids. Consequently, such devices inherently encompass a wide variety of multiphase flow regimes. A hybrid multiphase computational fluid dynamics (CFD) solver which combines the Eulerian multi-fluid method with VOF (volume of fluid) sharp interface capturing has been developed for application to annular centrifugal contactors. This solver has been extended to enable prediction of mean droplet size and liquid-liquid interfacial area through a single moment population balance method. Simulations of liquid-liquid mixing in a simplified geometry and a model annular centrifugal contactor are reported with droplet breakup/coalescence models being calibrated versus available experimental data. Quantitative comparison is made for two different housing vane geometries and it is found that the predicted droplet size is significantly smaller for vane geometries which result in higher annular liquid holdup.

  3. The large-area hybrid-optics CLAS12 RICH detector: Tests of innovative components

    NASA Astrophysics Data System (ADS)

    Contalbrigo, M.; Baltzell, N.; Benmokhtar, F.; Barion, L.; Cisbani, E.; El Alaoui, A.; Hafidi, K.; Hoek, M.; Kubarovsky, V.; Lagamba, L.; Lucherini, V.; Malaguti, R.; Mirazita, M.; Montgomery, R.; Movsisyan, A.; Musico, P.; Orecchini, D.; Orlandi, A.; Pappalardo, L. L.; Pereira, S.; Perrino, R.; Phillips, J.; Pisano, S.; Rossi, P.; Squerzanti, S.; Tomassini, S.; Turisini, M.; Viticchiè, A.

    2014-12-01

    A large area ring-imaging Cherenkov detector has been designed to provide clean hadron identification capability in the momentum range from 3 GeV/c to 8 GeV/c for the CLAS12 experiments at the upgraded 12 GeV continuous electron beam accelerator facility of Jefferson Lab to study the 3D nucleon structure in the yet poorly explored valence region by deep-inelastic scattering, and to perform precision measurements in hadronization and hadron spectroscopy. The adopted solution foresees a novel hybrid optics design based on an aerogel radiator, composite mirrors and densely packed and highly segmented photon detectors. Cherenkov light will either be imaged directly (forward tracks) or after two mirror reflections (large angle tracks). The preliminary results of individual detector component tests and of the prototype performance at test-beams are reported here.

  4. The large-area hybrid-optics CLAS12 RICH detector: Tests of innovative components

    SciTech Connect

    Contalbrigo, M; Baltzell, N; Benmokhtar, F; Barion, L; Cisbani, E; El Alaoui, A; Hafidi, K; Hoek, M; Kubarovsky, V; Lagamba, L; Lucherini, V; Malaguti, R; Mirazita, M; Montgomery, R; Movsisyan, A; Musico, P; Orecchini, D; Orlandi, A; Pappalardo, L L; Pereira, S; Perrino, R; Phillips, J; Pisano, S; Rossi, P; Squerzanti, S; Tomassini, S; Turisini, M; Viticchiè, A

    2014-07-01

    A large area ring-imaging Cherenkov detector has been designed to provide clean hadron identification capability in the momentum range from 3 GeV/c to 8 GeV/c for the CLAS12 experiments at the upgraded 12 GeV continuous electron beam accelerator facility of Jefferson Lab to study the 3D nucleon structure in the yet poorly explored valence region by deep-inelastic scattering, and to perform precision measurements in hadronization and hadron spectroscopy. The adopted solution foresees a novel hybrid optics design based on an aerogel radiator, composite mirrors and densely packed and highly segmented photon detectors. Cherenkov light will either be imaged directly (forward tracks) or after two mirror reflections (large angle tracks). The preliminary results of individual detector component tests and of the prototype performance at test-beams are reported here.

  5. Silicon photodiode as the two-color detector

    NASA Astrophysics Data System (ADS)

    Ponomarev, D. B.; Zakharenko, V. A.

    2015-11-01

    This paper describes a silicon photodiode as the two-color photodetector. The work of one photodiode in two spectral ranges is achieved due to the changes of the spectral sensitivity of the photodiodes in the transition from photodiode mode for photovoltaic in the short circuit mode. On the basis of silicon photodiode FD-256 the layout of the spectral ratio pyrometer was assembled and the results of theoretical calculations was confirmed experimentally. The calculated dependences of the coefficient of error of the spectral ratio pyrometer from temperature reverse voltage 10 and 100 V was presented. The calculated dependence of the instrumental error and the assessment of methodological errors of the proposed photodetector spectral ratio was done. According to the results of the presented research was set the task of development photodiode detectors which change the spectral sensitivity depending on the applied voltage.

  6. Status of the development of large area photon detectors based on THGEMs and hybrid MPGD architectures for Cherenkov imaging applications

    NASA Astrophysics Data System (ADS)

    Alexeev, M.; Birsa, R.; Bradamante, F.; Bressan, A.; Büchele, M.; Chiosso, M.; Ciliberti, P.; Torre, S. Dalla; Dasgupta, S.; Denisov, O.; Duic, V.; Finger, M.; Finger, M.; Fischer, H.; Giorgi, M.; Gobbo, B.; Gregori, M.; Herrmann, F.; Königsmann, K.; Levorato, S.; Maggiora, A.; Martin, A.; Menon, G.; Steiger, K.; Novy, J.; Panzieri, D.; Pereira, F. A.; Santos, C. A.; Sbrizzai, G.; Schiavon, P.; Schopferer, S.; Slunecka, M.; Sozzi, F.; Steiger, L.; Sulc, M.; Takekawa, S.; Tessarotto, F.; Veloso, J. F. C. A.; Makke, N.

    2016-07-01

    We report about the development status of large area gaseous single photon detectors based on a novel hybrid concept for RICH applications. The hybrid concept combines Thick Gaseous Electron Multipliers (THGEMs) coupled to CsI, working as a photon sensitive pre-amplification stage, and Micromegas, as a multiplication stage. The most recent achievements within the research and development programme consist in the assembly and study of 300 × 300mm2 hybrid photon detectors, the optimization of front-end electronics, and engineering towards large area detectors. Hybrid detectors with an active area of 300 × 300mm2 have been successfully operated in laboratory conditions and at a CERN PS T10 test beam, achieving effective gains in the order of 105 and good time resolution (σ = 7 ns); APV25 front-end chips have been coupled to the detector resulting in noise levels lower than 1000 electrons; the production and characterization of 300 × 600mm2 THGEMs is ongoing. A set of hybrid detectors with 600 × 600mm2 active area is envisaged to upgrade COMPASS RICH-1 at CERN in 2016.

  7. Nano-multiplication region avalanche photodiodes and arrays

    NASA Technical Reports Server (NTRS)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  8. Some tests of avalanche photodiodes produced by Advanced Photonix, Inc.

    SciTech Connect

    Foster, G.W.; Ronzhin, A.; Rusack, R.

    1995-08-01

    The goal of the measurements presented here is to check some parameters of the high gain avalanche photodiodes (APD`s) produced by Advanced Photonix, Inc. Samples with 16 mm and 5 mm diameter sensitive areas were tested. The tests were performed at FNAL. The new photomultiplier testing facility were used for gain measurements, linearity, and nonuniformity studies. The setup consists of laser with shifted wavelength of 440 nm, 10 Hz repetition rate and a pulse duration of 15 nsec. The laser light was transported to the APD by 1 mm diameter clear fiber. An amount of laser light was adjusted by rotating wheels of fixed light attenuation. The dynamic range of the APD, an amplifier (AMP) and an ADC was about 1000. To get the nonuniformity data the APD was mounted on a moveable stage under management and control of computer. The positioning of the fiber along sensitive surface of the APD was better than 100 microns.

  9. High resolution, low energy avalanche photodiode X-ray detectors

    NASA Technical Reports Server (NTRS)

    Farrell, R.; Vanderpuye, K.; Entine, G.; Squillante, M. R.

    1991-01-01

    Silicon avalanche photodiodes have been fabricated, and their performance as X-ray detectors has been measured. Photon sensitivity and energy resolution were measured as a function of size and operating parameters. Noise thresholds as low as 212 eV were obtained at room temperature, and backscatter X-ray fluorescence data were obtained for aluminum and other light elements. It is concluded that the results with the X-ray detector are extremely encouraging, and the performance is challenging the best available proportional counters. While not at the performance level of either cryogenic silicon or HgI2, these device operate at room temperature and can be reproduced in large numbers and with much larger areas than typically achieved with HgI2. In addition, they are rugged and appear to be indefinitely stable.

  10. Investigation of a photon counting avalanche photodiode from Hamamatsu photonics

    NASA Astrophysics Data System (ADS)

    Britvitch, I.; Musienko, Y.; Renker, D.

    2006-11-01

    Multi-cell avalanche photodiodes (APDs) operating in Geiger mode have been shown to be a very promising alternative to photomultiplier tubes for the detection of single photons at room temperature. Like a photomultiplier they have high gain and a fast rise time and they are insensitive to pickup. Beyond it they operate in high magnetic fields, are compact and need a relatively low bias voltage. It is expected that the MOS production technique makes them cheap. Recently PSI and Hamamatsu Photonics worked together for the development of a radiation-hard APD for CMS ECAL and had very good success. The development continued based on a similar design for a photon counting multielement Geiger-mode APD with an area of 1×1 mm 2. The properties of this device have been measured and will be reported.

  11. Light induced tunnel effect in CNT-Si photodiode

    NASA Astrophysics Data System (ADS)

    Aramo, C.; Ambrosio, M.; Bonavolontà, C.; Boscardin, M.; Castrucci, P.; Crivellari, M.; De Crescenzi, M.; de Lisio, C.; Fiandrini, E.; Grossi, V.; Maddalena, P.; Passacantando, M.; Santucci, S.; Scarselli, M.; Valentini, A.; Valentino, M.

    2016-07-01

    Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current-voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4 V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5 V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics.

  12. High-quantum-efficiency 2.2-um InGaAs MOCVD photodiodes

    NASA Astrophysics Data System (ADS)

    Wojtczuk, Steven; Colter, Peter C.; Jhabvala, Murzy D.

    1997-04-01

    Photodiodes responding in the 0.8-2.3 micrometers wavelength range are of interest in a wide range of applications, from wind- shear detection systems which use eyesafe 2.1 micrometers lasers to differential absorption LIDAR aerosol measurements of CO2. In this paper, we report on uncooled, broadband, 2.25 micrometers lattice-mismatched 0.55eV In0.72Ga0.28As photodiode arrays, in which the cutoff wavelength has been 'extended' from the 1.65 micrometers which is standard for 0.74eV In0.53Ga0.47As lattice-matched to InP wafers. InxGa1-xAs step-grading layers were used to transition from the InP wafer to the final In0.72Ga0.28As photodiode material during the metal organic chemical vapor deposition epitaxial growth. Linear 64 X 1 photodiode arrays were made with an independently-verified external quantum efficiency above 50 percent from 0.8 to 2.2 micrometers using MgF2/ZnS dual layer antireflection coating. Average 300 degree K area-normalized dark current for these N/P diodes was 5 X 10-5 A/cm2 at 10mV reverse bias.

  13. Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

    NASA Astrophysics Data System (ADS)

    Sun, Weiguo; Fan, Huitao; Peng, Zhenyu; Zhang, Liang; Zhang, Xiaolei; Zhang, Lei; Lu, Zhengxiong; Si, Junjie; Emelyanov, E.; Putyato, M.; Semyagin, B.; Pchelyakov, O.; Preobrazhenskii, V.

    2014-01-01

    Photodiodes of InSb were fabricated on an epitaxial layer grown using molecular beam epitaxy (MBE). Thermal cleaning of the InSb (0 0 1) substrate surface, 2° towards the (1 1 1) B plane, was performed to remove the oxide. Photodiode properties of МВЕ-formed epitaxial InSb were demonstrated. Zero-bias resistance area product (R0A) measurements were taken at 80 K under room temperature background for a pixel size of 100 μm × 100 μm. Values were as high as 4.36 × 104 Ω/cm2, and the average value of R0A was 1.66 × 104 Ω/cm2. The peak response was 2.44 (A/W). The epitaxial InSb photodiodes were fabricated using the same process as bulk crystal InSb diodes with the exception of the junction formation method. These values are comparable to the properties of bulk crystal InSb photodiodes.

  14. Interference effects in Reticon photodiode array detectors

    NASA Astrophysics Data System (ADS)

    Mount, George H.; Sanders, Ryan W.; Brault, James W.

    1992-03-01

    A detector system incorporating the Reticon RL1024S photodiode array has been constructed as part of a double spectrograph to be used to study the earth's atmosphere from ground-based and aircraft-based platforms. To determine accurately the abundances of atmospheric trace gases, this new system must be able to measure spectral absorptions as small as 0.02 percent. The detector exhibits superior signal-to-noise characteristics at the light levels characteristic of scattered skylights, but interference in the passivating layer causes problems in achieving the required precision. The mechanism of the problems and the solution implemented are described in detail.

  15. Cooled avalanche photodiode used for photon detection

    NASA Technical Reports Server (NTRS)

    Robinson, Deborah L.; Metscher, Brian D.

    1987-01-01

    Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5 to 3 times more sensitive than presently-available photomultiplier tubes (PPMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than 25 percent were obtained with detector noise levels comparable to the noise of a PMT; higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

  16. Photon detection with cooled avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Robinson, D. L.; Metscher, B. D.

    1987-01-01

    Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5-3 times more sensitive than presently available photomultiplier tubes (PMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than twice that of a PMT were obtained with detector noise levels below 100 counts per second. Higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

  17. Avalanche Photodiode Arrays for Optical Communications Receivers

    NASA Technical Reports Server (NTRS)

    Srinivasan, M.; Vilnrotter, V.

    2001-01-01

    An avalanche photodiode (APD) array for ground-based optical communications receivers is investigated for the reception of optical signals through the turbulent atmosphere. Kolmogorov phase screen simulations are used to generate realistic spatial distributions of the received optical field. It is shown that use of an APD array for pulse-position modulation detection can improve performance by up to 4 dB over single APD detection in the presence of turbulence, but that photon-counting detector arrays yield even greater gains.

  18. Why small avalanche photodiodes are beautiful

    NASA Astrophysics Data System (ADS)

    Rees, Graham J.; David, John P. R.

    2003-07-01

    Conventional wisdom suggests that, for low avalanche noise, avalanche photodiodes should operate at low electric fields, where electron and hole ionisation coefficients can differ widely. However, the associated weak ionization requires long multiplication regions, which in turn demand high bias voltages and result in long carrier transit times, reducing device speed. Moreover, multiplication is particularly sensitive to temperature in this region. In this paper we discuss the effects of dead space on reducing noise in short devices and on the associated benefits in predicted response time and reduced temperature sensitivity. The paper is illustrated with work from the Sheffield group.

  19. Photodiodes for ten micrometer laser communication systems

    NASA Technical Reports Server (NTRS)

    Cohen, S. C.

    1972-01-01

    The performance is discussed of 10-micron mercury-cadmiumtelluride and lead-tin-telluride photodiodes in laser heterodyne communication systems. The dependence of detector quantum efficiency, resistance, frequency response, and signal-to-noise ratio on temperature, bias, and local oscillator power are examined. Included in the discussion is an analysis of the feasibility of high temperature operation, and ability of the detector to dissipate power to a heat sink is explored. Some aspects of direct detection response are considered and figures showing flux levels from a blackbody presented.

  20. Reproductive effects in hybrid sparrow from a polluted area in Tunisia: Oxidative damage and altered testicular histomorphology.

    PubMed

    Amri, Nahed; Hammouda, Abdessalem; Rahmouni, Fatma; Chokri, Med Ali; Chaabane, Rim; Selmi, Slaheddine; Rebai, Tarek; Badraoui, Riadh

    2016-07-01

    Air pollution is a threat for human health and wildlife. The aim of this study is to assess the pathophysiological changes and the oxidative-antioxidative status in testicular tissues of 40 Hybrid sparrows collected from four areas in Gabès city, one of the most polluted areas in Tunisia. The testis histopathological analysis revealed alterations in birds from Ghannouche, the polluted area. The thiobarbituric acid reactive substance (TBARS) levels were higher in testis of birds from the contaminated site compared to less polluted areas indicating oxidative damage to membrane lipids. Antioxidant enzyme activities (superoxide dismutase and catalase) were lower in testis sparrows from the polluted site compared with the reference site, suggesting deficiency of the antioxidant system to compensate for oxidative stress. Overall, our results suggest that the hybrid sparrow offers a suitable model for biomonitoring programs of atmosphere pollutants and the selected biomarkers could be useful tool to evaluate pollution impacts in living organisms. PMID:27039245

  1. A hybrid modeling approach to resolve pollutant concentrations in an urban area

    NASA Astrophysics Data System (ADS)

    Stein, Ariel F.; Isakov, Vlad; Godowitch, James; Draxler, Roland R.

    A modeling tool that can resolve contributions from individual sources to the urban environment is critical for air-toxics exposure assessments. Air toxics are often chemically reactive and may have background concentrations originated from distant sources. Grid models are the best-suited tools to handle the regional features of these chemicals. However, these models are not designed to resolve pollutant concentrations on local scales. Moreover, for many species of interest, having reaction time scales that are longer than the travel time across an urban area, chemical reactions can be ignored in describing local dispersion from strong individual sources making Lagrangian and plume-dispersion models practical. In this study, we test the feasibility of developing an urban hybrid simulation system. In this combination, the Community Multi-scale Air Quality model (CMAQ) provides the regional background concentrations and urban-scale photochemistry, and local models such as Hybrid Single Particle Lagrangian Integrated Trajectory model (HYSPLIT) and AMS/EPA Regulatory Model (AERMOD) provide the more spatially resolved concentrations due to local emission sources. In the initial application, the HYSPLIT, AERMOD, and CMAQ models are used in combination to calculate high-resolution benzene concentrations in the Houston area. The study period is from 18 August to 4 September of 2000. The Mesoscale Model 5 (MM5) is used to create meteorological fields with a horizontal resolution of 1×1 km 2. In another variation to this approach, multiple HYSPLIT simulations are used to create a concentration ensemble to estimate the contribution to the concentration variability from point sources. HYSPLIT simulations are used to model two sources of concentration variability; one due to variability created by different particle trajectory pathways in the turbulent atmosphere and the other due to different flow regimes that might be introduced when using gridded data to represent

  2. A cooled avalanche photodiode with high photon detection probability

    NASA Technical Reports Server (NTRS)

    Robinson, D. L.; Metscher, B. D.

    1986-01-01

    An avalanche photodiode has been operated as a photon-counting detector with 2 to 3 times the sensitivity of currently-available photomultiplier tubes. APD (avalanche photodiodes) detection probabilities that exceed 27% and approach 50% have been measured at an optimum operating temperature which minimizes noise. The sources of noise and their dependence on operating temperature and bias voltage are discussed.

  3. Analytical modeling for gamma radiation damage on silicon photodiodes

    NASA Astrophysics Data System (ADS)

    Jafari, H.; Feghhi, S. A. H.

    2016-04-01

    Radiation-induced damage in PIN silicon photodiode induces degradation of the photodiode parameters. In this work, by presenting an analytical model, the effect of gamma dose on the dark current in a PIN photodiode array was investigated. Geant4 was used to obtain the damage constant as a result of primary incident particle fluence and NIEL distribution calculations. Experimental measurements as well as numerical simulation of the semiconductor with ATLAS were carried out to verify and parameterize the analytical model calculations. A reasonable agreement has been found between analytical results and experimental data for BPX65 silicon photodiodes irradiated by a Co-60 gamma source at total doses up to 500 krad under different reverse voltages. Moreover, the results showed that the dark current of each photodiode array pixel has considerably increased by gamma dose irradiation.

  4. Wedge hybrid plasmonic THz waveguide with long propagation length and ultra-small deep-subwavelength mode area.

    PubMed

    Gui, Chengcheng; Wang, Jian

    2015-01-01

    We present a novel design of wedge hybrid plasmonic terahertz (THz) waveguide consisting of a silicon (Si) nanowire cylinder above a triangular gold wedge with surrounded high-density polyethylene as cladding. It features long propagation length and ultra-small deep-subwavelength mode confinement. The mode properties of wedge hybrid plasmonic THz waveguide are comprehensively characterized in terms of propagation length (L), normalized mode area (Aeff/A0), figure of merit (FoM), and chromatic dispersion (D). The designed wedge hybrid plasmonic THz waveguide enables an ultra-small deep-subwavelength mode area which is more than one-order of magnitude smaller compared to previous rectangular one. When choosing the diameter of Si nanowire cylinder, a smaller diameter (e.g. 10 μm) is preferred to achieve longer L and higher FoM, while a larger diameter (e.g. 60 μm) is favorable to obtain smaller Aeff/A0 and higher FoM. We further study the impacts of possible practical fabrication errors on the mode properties. The simulated results of propagation length and normalized mode area show that the proposed wedge hybrid plasmonic THz waveguide is tolerant to practical fabrication errors in geometry parameters such as misalignment in the horizontal direction, variation of wedge tip angle, and variation of wedge tip curvature radius. PMID:26155782

  5. Wedge hybrid plasmonic THz waveguide with long propagation length and ultra-small deep-subwavelength mode area

    PubMed Central

    Gui, Chengcheng; Wang, Jian

    2015-01-01

    We present a novel design of wedge hybrid plasmonic terahertz (THz) waveguide consisting of a silicon (Si) nanowire cylinder above a triangular gold wedge with surrounded high-density polyethylene as cladding. It features long propagation length and ultra-small deep-subwavelength mode confinement. The mode properties of wedge hybrid plasmonic THz waveguide are comprehensively characterized in terms of propagation length (L), normalized mode area (Aeff /A0), figure of merit (FoM), and chromatic dispersion (D). The designed wedge hybrid plasmonic THz waveguide enables an ultra-small deep-subwavelength mode area which is more than one-order of magnitude smaller compared to previous rectangular one. When choosing the diameter of Si nanowire cylinder, a smaller diameter (e.g. 10 μm) is preferred to achieve longer L and higher FoM, while a larger diameter (e.g. 60 μm) is favorable to obtain smaller Aeff /A0 and higher FoM. We further study the impacts of possible practical fabrication errors on the mode properties. The simulated results of propagation length and normalized mode area show that the proposed wedge hybrid plasmonic THz waveguide is tolerant to practical fabrication errors in geometry parameters such as misalignment in the horizontal direction, variation of wedge tip angle, and variation of wedge tip curvature radius. PMID:26155782

  6. Examining the area effect for parasite communities of bluegill x green sunfish hybrids in five constructed ponds in Kansas.

    PubMed

    Zelmer, Derek A; Campbell, Johnathon K

    2011-04-01

    The parasite communities of bluegill x green sunfish hybrids were examined from 5 constructed ponds in Kansas in an attempt to evaluate the separate effects of habitat area and habitat heterogeneity on parasite community structure. Characterization of fish community structure and collection of hybrid fishes was conducted using an electrofishing boat. Benthic invertebrates were sampled, and substrate types examined at 30 evenly spaced points in each pond. Nonmetric multidimensional scaling of the parasite infracommunities, in concert with an analysis of similarities, indicated significant clustering of infracommunities by locality. The number and diversity of habitat types, and the richness and diversity of both fishes and benthic invertebrates, were positively correlated with the first axis of the infracommunity ordination. Pond surface area, parasite richness, and stocking pressure were negatively correlated with the first axis of the infracommunity ordination, suggesting that pond area, stocking pressure, or both was a stronger determinant of parasite community structure in these systems than habitat and host heterogeneity. PMID:21506793

  7. Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes

    SciTech Connect

    Imenkov, A. N.; Grebenshchikova, E. A. Starostenko, D. A.; Sherstnev, V. V.; Konovalov, G. G.; Andreev, I. A.; Yakovlev, Yu. P.

    2013-05-15

    InAs/InAs{sub 0.88}Sb{sub 0.12}/InAs{sub 0.50}Sb{sub 0.20}P{sub 0.30} heterostructure photodiodes operating at room temperature in the spectral range 1-4.8 {mu}m are developed. It is shown that the formation of a curvilinear reflecting surface constituted by a number of hemispheres on the rearside of the photodiode chip leads to an increase in the quantum sensitivity of the photodiodes by a factor of 1.5-1.7 at wavelengths in the range 2.2-4.8 {mu}m. At an exposed photodiode area of 0.9 mm{sup 2} and a p-n junction area of 0.15 mm{sup 2}, a zero-bias differential resistance of 30 {Omega} and a quantum sensitivity of 0.24 electron/photon at a wavelength of 3 {mu}m are obtained. The operation of a photodiode with re-reflection of the photon flux in the crystal due to reflection from the curvilinear surface of the rearside of the photodiode chip is theoretically analyzed. The possibility of effective conversion of the re-reflected flux of photons into a photocurrent, with a simultaneous decrease in the p-n junction area, is demonstrated. An increase in the quantum sensitivity in the short-wavelength spectral range 1-2.2 {mu}m by 35% relative to the calculated data is observed, which is probably due to impact ionization in the narrow-gap active region.

  8. Diamond photodiodes for x-ray application

    SciTech Connect

    Distel, James R; Smedley, John; Keister, Jeffrey W; Muller, Erik; Jordan - Sweet, Jean; Bohon, Jen; Dong, Bin

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 {+-} 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  9. Characterization of avalanche photodiodes for lidar atmospheric return signal detectors

    NASA Technical Reports Server (NTRS)

    Antill, C. W., Jr.; Holloway, R. M.

    1988-01-01

    Results are presented from tests to characterize noise, dark current, overload, and gain versus bias, relationships of ten avalanche photodiodes. The advantages of avalanche photodiodes over photomultiplier tubes for given laser wavelengths and return signal amplitudes are outlined. The relationship between responsivity and temperature and dark current and temperature are examined. Also, measurements of the noise equivalent power, the excess noise factor, and linearity are given. The advantages of using avalanche photodiodes in the Lidar Atmospheric Sensing Experiment and the Lidar In-Space Technology Experiment are discussed.

  10. CMOS array of photodiodes with electronic processing for 3D optical reconstruction

    NASA Astrophysics Data System (ADS)

    Hornero, Gemma; Montane, Enric; Chapinal, Genis; Moreno, Mauricio; Herms, Atila

    2001-04-01

    It is well known that laser time-of-flight (TOF) and optical triangulation are the most useful optical techniques for distance measurements. The first one is more suitable for large distances, since for short range of distances high modulation frequencies of laser diodes (©200-500MHz) are needed. For these ranges, optical triangulation is simpler, as it is only necessary to read the projection of the laser point over a linear optical sensor without any laser modulation. Laser triangulation is based on the rotation of the object. This motion shifts the projected point over the linear sensor, resulting on 3D information, by means of the whole readout of the linear sensor in each angle position. On the other hand, a hybrid method of triangulation and TOF can be implemented. In this case, a synchronized scanning of a laser beam over the object results in different arrival times of light to each pixel. The 3D information is carried by these delays. Only a single readout of the linear sensor is needed. In this work we present the design of two different linear arrays of photodiodes in CMOS technology, the first one based on the Optical triangulation measurement and the second one based in this hybrid method (TFO). In contrast to PSD (Position Sensitive Device) and CCDs, CMOS technology can include, on the same chip, photodiodes, control and processing electronics, that in the other cases should be implemented with external microcontrollers.

  11. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

    NASA Astrophysics Data System (ADS)

    Chaghi, R.; Cervera, C.; Aït-Kaci, H.; Grech, P.; Rodriguez, J. B.; Christol, P.

    2009-06-01

    In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H3PO4), citric acid (C6H8O7) and H2O2, followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current-voltage measurements. The zero-bias resistance area product R0A above 4 × 105 Ω cm2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air.

  12. Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide

    NASA Astrophysics Data System (ADS)

    DiLello, Nicole A.; Hoyt, Judy L.

    2011-07-01

    Ge-on-Si photodiodes were fabricated from epitaxial germanium films grown by low-pressure chemical vapor deposition. These vertical p-i-n diodes were passivated with SiO2 deposited by chemical vapor deposition. It is found that the incorporation of a post-metallization anneal reduces the dark current by 1000X for small-area devices, with 10 × 10 μm diodes exhibiting a dark current of 8 nA at -1 V. Metal-oxide-semiconductor capacitors were also fabricated using the same materials and annealing conditions. Capacitance-voltage measurements indicate that the anneal changes the surface condition of the germanium from depletion to accumulation, lowering the photodiode perimeter leakage current.

  13. Fully tileable photodiode matrix for medical imaging by using through-wafer interconnects

    NASA Astrophysics Data System (ADS)

    Juntunen, Mikko; Ji, Fan; Henttinen, Kimmo; Luusua, Ismo; Hietanen, Iiro; Eränen, Simo

    2007-10-01

    This paper presents a technology for a fully tileable two-dimensional (2D) photodiode matrix for medical imaging, specifically X-ray computed tomography (CT). A key trend in the CT industry is to build machines with larger area detector to speed up the measurements and to avoid image blurring due to patient movement during scanning. In current CT detector constructions, a major limiting factor in providing more detector coverage is the need to read out the signals from the individual photo-detector elements of the detector array through lines along the surface facing the radiation source and wire bonds down to a substrate or to an electronics chip. Using this method, there is a physical limitation on the size of a photo-detector array that may be manufactured. A photo-detector with the possibility of expansion in all directions is known as a 'tileable' detector. A technology of integrating through-wafer interconnects (TWIs) with traditional front illuminated photodiodes is introduced. Photocurrent can be read out from back side of the photodiode chip through interconnects, giving possibility of constructing arbitrarily large area of photo-detector for CT machine. Results of a sample 2D demonstrator detector array are presented showing that the requirements of modern CT systems can be met.

  14. Characterization of Al0.8Ga0.2As geiger photodiode

    NASA Astrophysics Data System (ADS)

    Chen, X. J.; Ren, Min; Chen, Yaojia; Johnson, E. B.; Campbell, Joe C.; Christian, James F.

    2015-08-01

    Solid-state photomultipliers (SSPM) are high gain photodetectors composed of Geiger photodiodes (GPD) operating above device breakdown voltage. In scintillation based radiation detection applications, SSPMs fabricated using silicon (SiPMs, MPPCs, etc) provide a compact, low cost alternative to photomultiplier tubes (PMTs), however, the high dark count rate due to its low band-gap (1.1eV) limits the signal-to-noise performance as the silicon SSPM is scaled to large areas. SSPMs fabricated in materials with a larger band-gap have the potential to surmount the performance limitations experienced by silicon. AlGaAs is a material that provides a bandgap from 1.55eV to 2.13 eV, depending on Al concentration. Using high Al concentration AlGaAs to engineer a wideband- gap (>2eV) SSPM is very desirable in terms of reducing dark noise, which promises better signal-to-noise performances when large detector areas is needed. This work describes the development of Geiger photodiodes (GPDs), the individual elements of a SSPM, fabricated in AlGaAs with 80% Al concentration. We present the design of the GPDs, the fabrication process, along with characterization data of fabricated GPD samples. To the best of our knowledge, we have demonstrated for the first time, a passively quenched Geiger photodiode in Al0.8Ga0.2As.

  15. Modular design for narrow scintillating cells with MRS photodiodes in strong magnetic field for ILC detector

    NASA Astrophysics Data System (ADS)

    Beznosko, D.; Blazey, G.; Dyshkant, A.; Rykalin, V.; Schellpffer, J.; Zutshi, V.

    2006-08-01

    The experimental results for the narrow scintillating elements with effective area about 20 cm 2 are reported. The elements were formed from the single piece of scintillator and were read out via wavelength shifting (WLS) fibers with the Metal/Resistor/Semiconductor (MRS) photodiodes on both ends of each fiber. The count rates were obtained using radioactive source 90Sr, with threshold at about three photoelectrons in each channel and quad coincidences (double coincidences between sensors on each fiber and double coincidences between two neighboring fibers). The formation of the cells from the piece of scintillator by using grooves is discussed, and their performances were tested using the radioactive source by measuring the photomutiplier current using the same WLS fiber. Because effective cell area can be readily enlarged or reduced, this module may be used as an active element for calorimeter or muon system for the design of the future electron-positron linear collider detector. Experimental verification of the performance of the MRS photodiode in a strong magnetic field of 9 T, and the impact a magnet quench at 9.5 T are reported. The measurement method used is described. The results confirm the expectations that the MRS photodiode is insensitive to a strong magnetic field and therefore applicable to calorimetry in the presence of magnetic field. The overall result is of high importance for large multi-channel systems.

  16. A novel pixel design with hybrid type isolation scheme for low dark current in CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Choi, Sung Ho; Kim, Yi Tae; Oh, Min Seok; Park, Young Hwan; Cho, Jeong Jin; Jang, Young Heub; Han, Hyung Jun; Choi, Jong Won; Park, Ho Woo; Jung, Sang Il; Oh, Hoon Sang; Ahn, Jung Chak; Goto, Hiroshige; Choi, Chi Young; Roh, Yonghan

    2013-02-01

    New isolation scheme for CMOS image sensor pixel is proposed and its improved dark current performance is reported. It is well known that shallow trench isolation (STI) is one of major sources of dark current in imager pixel due to the existence of interfacial defects at STI/Si interface. On the account STI-free structure over the whole pixel area was previously reported for reducing dark current. As the size of pixel pitch is shrunk, however, it becomes increasingly difficult to isolate in-pixel transistors electrically without STI. In this work, we implemented hybrid type isolation scheme of removing STI around photodiode to suppress the dark current and remaining STI near transistors to guarantee the electrical isolation of transistors in pixel. It was successfully achieved that the dark current was significantly reduced by removing the STI around the photodiode together with normal operation of in-pixel transistors.

  17. Stable, high quantum efficiency silicon photodiodes for vacuum-UV applications

    NASA Technical Reports Server (NTRS)

    Korde, Raj; Canfield, L. Randall; Wallis, Brad

    1988-01-01

    Silicon photodiodes have been developed by defect-free phosphorus diffusion having practically no carrier recombination at the SiSiO2 interface or in the front diffused region. The quantum efficiency of these photodiodes was found to be around 120 percent at 100 nm. Unlike the previously tested silicon photodiodes, the developed photodiodes exhibit extremely stable quantum efficiency over extended periods of time. The possibility of using these photodiodes as vacuum ultraviolet detector standards is being currently investigated.

  18. Relative degradation of near infrared avalanche photodiodes from proton irradiation

    NASA Technical Reports Server (NTRS)

    Becker, Heidi; Johnston, Allan H.

    2004-01-01

    InGaAs and Ge avalanche photodiodes are compared for the effects of 63-MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.

  19. Optimum Receiver Structure for PPM Signals with Avalanche Photodiode Statistics

    NASA Technical Reports Server (NTRS)

    Vilnrotter, V.; Srinivasan, M.

    1998-01-01

    The maximum likelihood decision statistic for detection of pulse-position modulated signals with an avalanche photodiode is derived, using the more accurate Webb density rather than Poisson or Gaussian approximations for the distribution of avalanche photodiode output electrons. It is shown that for Webb-distributed output electtrons, the maximum likelihood rule is to choose the PPM word corresponding to the slot with the maximum electron count.

  20. Presumable incipient hybrid speciation of door snails in previously glaciated areas in the Caucasus.

    PubMed

    Koch, Eva L; Neiber, Marco T; Walther, Frank; Hausdorf, Bernhard

    2016-04-01

    Homoploid hybrid speciation, speciation by hybridization without a change in chromosome number, may be the result of an encounter of closely related species in a habitat that is different from that usually occupied by these species. In the northwestern Caucasus the land snail species Micropontica caucasica and M. circassica form two distinct entities with little admixture at low and intermediate altitudes. However, at higher altitudes in the Lagonaki plateau, which were repeatedly glaciated, Micropontica populations with intermediate characters occur. Admixture analyses based on AFLP data demonstrated that the populations from the Lagonaki plateau are homoploid hybrids that now form a cluster separate from the parental species. The Lagonaki populations are characterized by a mtDNA haplotype clade that has been found in the parental species only once. The fixation of this haplotype clade in most hybrid populations suggests that these haplotypes are better adapted to the cooler conditions in high altitude habitats and have replaced the haplotypes of the parental species in a selective sweep. The fixation of a presumably adaptive mitochondrial haplotype clade in the Lagonaki populations is an important step towards speciation under the differential fitness species concept. PMID:26748267

  1. Measuring atmospheric dispersion employing avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Schreiber, Ulrich; Maier, Wolfgang; Riepl, Stefan

    1994-12-01

    The accuracy of today's satellite laser ranging system is limited to a few cm. A significant part of this range error is due to the limitations of the atmospheric correction model. A dual color ranging experiment has been designed to investigate this source of error. When ranging to satellites at the fundamental and second harmonic frequency of a Nd:YAG laser, two different pulse round trip times are obtained simultaneously. The infrared pulse is detected by an avalanche photodiode, operated in the `Geiger mode', while the green pulse is recorded by a microchannel plate photomultiplier. For a given satellite pass, the jitter in recording the time of flight of the pulse is too high to calculate an atmospheric correction from individual measurements. Due to the many shots per satellite pass, the scatter can be significantly reduced by applying a nonlinear least squares fitting procedure to the data. The results of a large number of satellite passes are compared with the predictions of the Marini-Murray model.

  2. Technology reinvestment project`s focus area: Electric and hybrid tactical and commercial vehicles

    SciTech Connect

    1994-11-01

    The publication contains the transparencies from the Technology Reinvestment Projects`s (TRP`s) workshops held in Chicago, IL and Austin, TX in November, 1994. It includes general sessions on TRP, Technology Development, Regional Technology Alliances, and Manufacturing Education and Training, as well as the break out session on Electric and Hybrid Tactical and Commercial Vehicles. Also included are registration forms for both workshops.

  3. [Wastewater Quantity and Quality Fluctuation Characteristics of Typical Area of Hybrid Sewage System].

    PubMed

    Cheng, Xun; Zhang, Ming-kai; Liu, Yan-chen; Shi, Han-chang

    2016-05-15

    The inflow and infiltration problems cause large fluctuation in wastewater quantity and quality in hybrid sewage system. This seriously challenges the operation and management of sewage system. A multi-point on-line simultaneous monitoring system was established in a typical hybrid sewage system. The key characteristic parameters and their variation features under different circumstances were studied. The result indicated that the daily variation rule was obvious and appeared synchronous among multiple points at normal water level under dry weather flow, but there was no synchronization in conductivity variation among multiple points at high water level under dry weather flow. The statistical distribution range of water level and conductivity was significantly impacted by the seasonal rainfall change under dry weather. The statistical distribution ranges of water level variation rate and conductivity variation rate in specific time were significantly impacted by the rainfall. The response features of water level and conductivity to rainfall intensity and pattern were significantly different under different circumstances. The response sensitivity of conductivity was higher than water level at normal water level and lower at high water level. The database which could support the optimization of operation and management in the hybrid sewage system was proposed based on the distribution law of wastewater quality and quantity fluctuation under dry and wet weather, as well as the variation rate features of wastewater quality and quantity during rainfall obtained using the multi-point on-line simultaneous monitoring system. PMID:27506039

  4. Metropolitian area network services comprised of virtual local area networks running over hybrid fiber-coax and asynchronous transfer mode technologies

    NASA Astrophysics Data System (ADS)

    Biedron, William S.

    1995-11-01

    Since 1990 there has been a rapid increase in the demand for communication services, especially local and wide area network (LAN/WAN) oriented services. With the introduction of the DFB laser transmitter, hybrid-fiber-coax (HFC) cable plant designs, ATM transport technologies and rf modems, new LAN/WAN services can now be defined and marketed to residential and business customers over existing cable TV systems. The term metropolitan area network (MAN) can be used to describe this overall network. This paper discusses the technical components needed to provision these services as well as provides some perspectives on integration issues. Architecture at the headend and in the backbone is discussed, as well as specific service definitions and the technology issues associated with each. The TCP/IP protocol is suggested as a primary protocol to be used throughout the MAN.

  5. Rapid production of large-area deep sub-wavelength hybrid structures by femtosecond laser light-field tailoring

    SciTech Connect

    Wang, Lei; Chen, Qi-Dai E-mail: hbsun@jlu.edu.cn; Yang, Rui; Xu, Bin-Bin; Wang, Hai-Yu; Yang, Hai; Huo, Cheng-Song; Tu, Hai-Ling; Sun, Hong-Bo E-mail: hbsun@jlu.edu.cn

    2014-01-20

    The goal of creation of large-area deep sub-wavelength nanostructures by femtosecond laser irradiation onto various materials is being hindered by the limited coherence length. Here, we report solution of the problem by light field tailoring of the incident beam with a phase mask, which serves generation of wavelets. Direct interference between the wavelets, here the first-order diffracted beams, and interference between a wavelet and its induced waves such as surface plasmon polariton are responsible for creation of microgratings and superimposed nanogratings, respectively. The principle of wavelets interference enables extension of uniformly induced hybrid structures containing deep sub-wavelength nanofeatures to macro-dimension.

  6. Photodiode arrays having minimized cross-talk between diodes

    DOEpatents

    Guckel, Henry; McNamara, Shamus P.

    2000-10-17

    Photodiode arrays are formed with close diode-to-diode spacing and minimized cross-talk between diodes in the array by isolating the diodes from one another with trenches that are formed between the photodiodes in the array. The photodiodes are formed of spaced regions in a base layer, each spaced region having an impurity type opposite to that of the base layer to define a p-n junction between the spaced regions and the base layer. The base layer meets a substrate at a boundary, with the substrate being much more heavily doped than the base layer with the same impurity type. The trenches extend through the base layer and preferably into the substrate. Minority carriers generated by absorption of light photons in the base layer can only migrate to an adjacent photodiode through the substrate. The lifetime and the corresponding diffusion length of the minority carriers in the substrate is very short so that all minority carriers recombine in the substrate before reaching an adjacent photodiode.

  7. Photocurrent enhancement of HgTe quantum dot photodiodes by plasmonic gold nanorod structures.

    PubMed

    Chen, Mengyu; Shao, Lei; Kershaw, Stephen V; Yu, Hui; Wang, Jianfang; Rogach, Andrey L; Zhao, Ni

    2014-08-26

    The near-field effects of noble metal nanoparticles can be utilized to enhance the performance of inorganic/organic photosensing devices, such as solar cells and photodetectors. In this work, we developed a well-controlled fabrication strategy to incorporate Au nanostructures into HgTe quantum dot (QD)/ZnO heterojunction photodiode photodetectors. Through an electrostatic immobilization and dry transfer protocol, a layer of Au nanorods with uniform distribution and controllable density is embedded at different depths in the ZnO layer for systematic comparison. More than 80 and 240% increments of average short-circuit current density (Jsc) are observed in the devices with Au nanorods covered by ∼7.5 and ∼4.5 nm ZnO layers, respectively. A periodic finite-difference time-domain (FDTD) simulation model is developed to analyze the depth-dependent property and confirm the mechanism of plasmon-enhanced light absorption in the QD layer. The wavelength-dependent external quantum efficiency spectra suggest that the exciton dissociation and charge extraction efficiencies are also enhanced by the Au nanorods, likely due to local electric field effects. The photodetection performance of the photodiodes is characterized, and the results show that the plasmonic structure improves the overall infrared detectivity of the HgTe QD photodetectors without affecting their temporal response. Our fabrication strategy and theoretical and experimental findings provide useful insight into the applications of metal nanostructures to enhance the performance of organic/inorganic hybrid optoelectronic devices. PMID:25020202

  8. Quantifying the Area-at-Risk in Reperfused STEMI Patients Using Hybrid Cardiac PET-MR Imaging

    PubMed Central

    Bulluck, Heerajnarain; White, Steven K.; Fröhlich, Georg M.; Casson, Steven G.; O’Meara, Celia; Newton, Ayla; Nicholas, Jennifer; Weale, Peter; Wan, Simon M.Y.; Sirker, Alex; Moon, James C.; Yellon, Derek M.; Groves, Ashley; Menezes, Leon; Hausenloy, Derek J

    2016-01-01

    Background Hybrid Positron Emission Tomography and Magnetic Resonance (PET-MR) allows the advantages of MR in tissue characterizing the myocardium to be combined with the unique metabolic insights of PET. We hypothesized that the area of reduced myocardial glucose uptake would closely match the area-at-risk (AAR) delineated by T2-mapping in ST-segment elevation myocardial infarction (STEMI) patients. Methods and Results Hybrid PET-MR using 18F-fluorodeoxyglucose (FDG) for glucose uptake was performed in 21 STEMI patients at a median of 5 days. Follow-up scans were performed in a subset of patients 12 months later. The area of reduced FDG uptake was significantly larger than the infarct size quantified by late gadolinium enhancement (LGE) (37.2±11.6% versus 22.3±11.7%; P<0.001), and closely matched the AAR by T2-mapping (37.2±11.6% versus 36.3±12.2%; P=0.10, R 0.98, bias 0.9±4.4%). On the follow-up scans, the area of reduced FDG uptake was significantly smaller in size when compared to the acute scans (19.5 [6.3-31.8]% versus 44.0 [21.3-55.3]%, P=0.002), and closely correlated with the areas of LGE (R 0.98) with a small bias of 2.0±5.6%. An FDG uptake of ≥45% on the acute scans could predict viable myocardium on the follow-up scan. Both transmural extent of LGE and FDG uptake on the acute scan performed equally well to predict segmental wall motion recovery. Conclusions Hybrid PET-MR in the reperfused STEMI patient showed reduced myocardial glucose uptake within the AAR and closely matched the AAR delineated by T2-mapping. FDG uptake, as well as transmural extent of LGE acutely can identify viable myocardial segments. PMID:26926269

  9. Photonic microwave generation with high-power photodiodes.

    PubMed

    Fortier, Tara M; Quinlan, Franklyn; Hati, Archita; Nelson, Craig; Taylor, Jennifer A; Fu, Yang; Campbell, Joe; Diddams, Scott A

    2013-05-15

    We utilized and characterized high-power, high-linearity modified unitraveling carrier (MUTC) photodiodes for low-phase-noise photonic microwave generation based on optical frequency division (OFD). When illuminated with picosecond pulses from a repetition-rate-multiplied gigahertz Ti:sapphire modelocked laser, the photodiodes can achieve a 10 GHz signal power of +14 dBm. Using these diodes, we generated a 10 GHz microwave tone with less than 500 attoseconds absolute integrated timing jitter (1 Hz-10 MHz) and a phase noise floor of -177 dBc/Hz.We also characterized the electrical response, amplitude-to-phase conversion, saturation, and residual noise of the MUTC photodiodes. PMID:23938920

  10. Analysis of the photodiode boundary layer transition indicator

    SciTech Connect

    Kuntz, D.W.; Wilken, A.C.; Payne, J.L.

    1994-01-01

    The photodiode transition indicator is a device which has been successfully used to determine the onset of boundary layer transition on numerous hypersonic flight vehicles. The exact source of the electromagnetic radiation detected by the photodiode at transition was not understood. In some cases early saturation of the device occurred, and the device failed to detect transition. Analyses have been performed to determine the source of the radiation producing the photodiode signal. The results of these analyses indicate that the most likely source of the radiation is blackbody emission from the heatshield material bordering the quartz window of the device. Good agreement between flight data and calculations based on this radiation source has been obtained. Analyses also indicate that the most probable source of the radiation causing early saturation is blackbody radiation from carbon particles which break away from the nosetip during the ablation process.

  11. Design of an Area-Efficient and Low-Power NoC Architecture Using a Hybrid Network Topology

    NASA Astrophysics Data System (ADS)

    Kim, Woo Joo; Hwang, Sun Young

    This paper proposes a novel hybrid NoC structure and a dynamic job distribution algorithm which can reduce system area and power consumption by reducing packet drop rate for various multimedia applications. The proposed NoC adopts different network structures between sub-clusters. Network structure is determined by profiling application program so that packet drop rate can be minimized. The proposed job distribution algorithm assigns every job to the sub-cluster where packet drop rate can be minimized for each multimedia application program. The proposed scheme targets multimedia applications frequently used in modern embedded systems, such as MPEG4 and MP3 decoders, GPS positioning systems, and OFDM demodulators. Experimental results show that packet drop rate was reduced by 31.6% on the average, when compared to complex network structure topologies consisting of sub-clusters of same topology. Chip area and power consumption were reduced by 16.0% and 34.0%, respectively.

  12. High speed, high performance /Hg,Cd/Te photodiode detectors.

    NASA Technical Reports Server (NTRS)

    Soderman, D. A.; Pinkston, W. H.

    1972-01-01

    The current performance of high speed photodiode detectors for the 1 to 10 micron spectral region is discussed. The (Hg,Cd)Te photodiode configuration, detector properties, integration in laser receiver modules, and frequency response are considered for near infrared and far infrared wavelengths. The recent advances in (Hg,Cd)Te material and device development are indicated by the realization not only of exceptionally high speed detectors but of detectors that exhibit excellent detectivities. The performance improves substantially when the detector is cooled. This detector junction technology has been extended to other compositions of (Hg,Cd)Te for peak spectral responses at 5 and 10 micron.

  13. III-V alloy heterostructure high speed avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  14. Effects of the 9-T magnetic field on MRS photodiode

    SciTech Connect

    Beznosko, D.; Blazey, G.; Dyshkant, A.; Rykalin, V.; /Northern Illinois U.

    2005-10-01

    The experimental results on the performance of the MRS (Metal/Resistor/Semiconductor) photodiode in the strong magnetic field of 9T, and the possible impact of the quench of the magnet at 9.5T on sensor's operation are reported. The measurement method used is being described. The results of the work agree with the expectations that the MRS photodiode is not exhibiting sensitivity to the magnetic field presence. This result is essential for the design of the future electron-positron linear collider detector.

  15. Study on avalanche photodiode influence on heterodyne laser interferometer linearity

    NASA Astrophysics Data System (ADS)

    Budzyn, Grzegorz; Podzorny, Tomasz

    2016-06-01

    In the paper we analyze factors reducing the possible accuracy of the heterodyne laser interferometers. The analysis is performed for the avalanche-photodiode input stages but is in main points valid also for stages with other type of photodetectors. Instrumental error originating from optical, electronic and digital signal processing factors is taken into consideration. We stress factors which are critical and those which can be neglected at certain accuracy requirements. In the work we prove that it is possible to reduce errors of the laser instrument below 1 nm point for multiaxial APD based interferometers by precise control of incident optical power and the temperature of the photodiode.

  16. Ultra-low noise charge sensitive preamplifier for scintillation detection with avalanche photodiodes in PET applications

    SciTech Connect

    Schmitt, D.; Lecomte, R.; Lapointe, M.; Martel, G.; Carrier, C.; Karuta, B.; Duval, F.

    1987-02-01

    The need for compact, fast, low-noise front-end electronics in high resolution positron emission tomography (PET) has prompted this effort to design a preamplifier suitable for avalanche photodiode-based scintillation detectors. Due to the small signals from the detectors (< .03 rhoC/meV), a preamplifier with ultra-low noise performance in the 5 to 20 MHz range is essential to achieve the timing resolution required by the PET application. Out of many available technologies, a new third generation MOSFET was selected and implemented as input transistor in an original charge sensitive (CSP) design. Performance among the best reported to date are obtained. The new design was implemented as a dual-channel preamplifier in high density hybrid (thick film) technology.

  17. PbS colloidal quantum dot photodiodes for low-cost SWIR sensing

    NASA Astrophysics Data System (ADS)

    Klem, Ethan J. D.; Gregory, Chris; Temple, Dorota; Lewis, Jay

    2015-06-01

    RTI has developed a photodiode technology based on solution-processed PbS colloidal quantum dots (CQD). These devices are capable of providing low-cost, high performance detection across the Vis-SWIR spectral range. At the core of this technology is a heterojunction diode structure fabricated using techniques well suited to wafer-scale fabrication, such as spin coating and thermal evaporation. This enables RTI's CQD diodes to be processed at room temperature directly on top of read-out integrated circuits (ROIC), without the need for the hybridization step required by traditional SWIR detectors. Additionally, the CQD diodes can be fabricated on ROICs designed for other detector material systems, effectively allowing rapid prototype demonstrations of CQD focal plane arrays at low cost and on a wide range of pixel pitches and array sizes.

  18. Performance comparison of CMOS-based photodiodes for high-resolution and high-sensitivity digital mammography

    NASA Astrophysics Data System (ADS)

    Bae, J. H.; Cho, M.; Kim, M. S.; Lee, D. H.; Cho, G.

    2011-12-01

    In order to develop a high-resolution and high-sensitivity digital mamographic detector, to use a commercially-available and well-developed CMOS image sensor (CIS) process can be a cost-effective way. However, in any commercial CIS process, several different types of n- or p-layers can be used so that various pn-junction structures could be formed depending on the choice of n- and p-layer combination. We performed a comparative analysis on the characteristics of three types of photodiodes formed on a high-resistivity p-type epitaxial wafer by applying three available n-layer processes in order to develop the high-sensitivity photodiode for a scintillator-based X-ray imaging detector. As a preliminar study, a small test-version CIS chip with an 80 × 80 pixel array of a 3-transistor active pixel sensor structure, 50 μm pitch and 80{%} fill factor was fabricated. The pixel area is subdivided into four 40 × 40 sub-arrays and 3 different types of photodides are designed for each sub-array by using n+, n- and n-well layers. All other components are designed to be identical for impartial comparison of the photodiodes only. Among 3 types, the n-/p-epi photodiode exhibited high charge-to-voltage gain (0.86 μV/e-), high quantum efficiency (49% at 532 nm wavelength) and low dark current (294 pA/cm2). The test CIS chip was coupled to a phosphor screen, Lanex Fine or Lanex Regular, both composed of Gd2O2S:Tb, and was tested using X-rays in a mammography setting. Among 6 cases, n-/p-epi photodiode coupled with the Lanex Regular also showed the highest sensitivity of 30.5 mV/mR.

  19. Independently accessed back-to-back HgCdTe photodiodes: A new dual-band infrared detector

    NASA Astrophysics Data System (ADS)

    Reine, M. B.; Norton, P. W.; Starr, R.; Weiler, M. H.; Kestigian, M.; Musicant, B. L.; Mitra, P.; Schimert, T.; Case, F. C.; Bhat, Lb.; Ehsani, H.; Rao, V.

    1995-05-01

    We report the first data for a new two-color HgCdTe infrared detector for use in large dual-band infrared focal plane arrays (IRFPAs). Referred to as the independently accessed back-to-back photodiode structure, this novel dual-band HgCdTe detector provides independent electrical access to each of two spatially collocated back-to-back HgCdTe photodiodes so that true simultaneous and independent detection of medium wavelength (MW, 3-5 μm) and long wavelength (LW, 8-12 μm) infrared radiation can be accomplished. This new dual-band detector is directly compatible with standard backside-illuminated bump-interconnected hybrid HgCdTe IRFPA technology. It is capable of high fill factor, and allows high quantum efficiency and BLIP sensitivity to be realized in both the MW and LW photodiodes. We report data that demonstrate experimentally the key features of this new dual-band detector. These arrays have a unit cell size of 100 x 100 μm2, and were fabricated from a four-layer p-n-N-P HgCdTe film grown in situ by metalorganic chemical vapor deposition on a CdZnTe substrate. At 80K, the MW detector cutoff wavelength is 4.5 μm and the LW detector cutoff wavelength is 8.0 μm. Spectral crosstalk is less than 3%. Data confirm that the MW and LW photodiodes are electrically and radiometrically independent.

  20. Hybrid microelectronic technology

    NASA Astrophysics Data System (ADS)

    Moran, P.

    Various areas of hybrid microelectronic technology are discussed. The topics addressed include: basic thick film processing, thick film pastes and substrates, add-on components and attachment methods, thin film processing, and design of thick film hybrid circuits. Also considered are: packaging hybrid circuits, automating the production of hybrid circuits, application of hybrid techniques, customer's view of hybrid technology, and quality control and assurance in hybrid circuit production.

  1. Results on a prototype of a large-area X-ray imaging device using CMOS hybrid detectors

    NASA Astrophysics Data System (ADS)

    Chaput, J.; Caria, M.; Laverroux, F.; Surre, B.; Maublant, J.

    2005-12-01

    This paper presents the first results on a prototype of a large-area X-ray imaging device made out of hybrid CMOS pixel detectors. The challenges of manufacturing and implementing imaging devices on an area larger than the single component size, with a seamless sensitive area, are addressed via a preliminary evaluation of the images. A sensitive area of approximately 6×3 cm 2 was built with eight single ASIC chips performing photon counting and bump-bonded to two high-resistivity p-n silicon sensors working in a reverse bias mode. Each chip consists of 256×256 identical square pixels of 55 μm side. The image delivered is a 1024×512-pixel matrix. Dedicated read-out electronics, software and mechanical supports have been developed. We report and discuss the challenges of the system in terms of the resulting quality of static images obtained with a 70 kV X-ray tube.

  2. Anatexis, hybridization and the modification of ancient crust: Mesozoic plutonism in the Old Woman Mountains area, California

    USGS Publications Warehouse

    Miller, C.F.; Wooden, J.L.

    1994-01-01

    A compositionally expanded array of granitic (s.l.) magmas intruded the > 2 Ga crust of the Old Woman Mountains area between 160 and 70 Ma. These magmas were emplaced near the eastern (inland) edge of the Jurassic/Cretaceous arcs of western North America, in an area where magma flux, especially during the Jurassic, was considerably lower than to the west. The Jurassic intrusives and over half of the Cretaceous intrusives are predominantly metaluminous and variable in composition; a major Cretaceous suite comprises only peraluminous monzogranite. Only the Jurassic intrusions show clear evidence for the presence of mafic liquids. All units, including the most mafic rocks, reveal isotopic evidence for a significant crustal component. However, none of the Mesozoic intrusives matches in isotopic composition either average pre-intrusion crust or any major unit of the exposed crust. Elemental inconsistencies also preclude closed system derivation from exposed crust. Emplacement of these magmas, which doubled the volume of the mid- to upper crust, did not dramatically change its elemental composition. It did, however, affect its Nd and especially Sr isotopic composition and modify some of the distinctive aspects of the elemental chemistry. We propose that Jurassic magmatism was open-system, with a major influx of mantle-derived mafic magma interacting strongly with the ancient crust. Mesozoic crustal thickening may have led to closed-system crustal melting by the Late Cretaceous, but the deep crust had been profoundly modified by earlier Mesozoic hybridization so that crustal melts did not simply reflect the original crustal composition. The clear evidence for a crustal component in magmas of the Old Woman Mountains area may not indicate any fundamental differences from the processes at work elsewhere in this or other magmatic arcs where the role of pre-existing crust is less certain. Rather, a compositionally distinctive, very old crust may simply have yielded a more

  3. Hybridization of Southern Hemisphere blue whale subspecies and a sympatric area off Antarctica: impacts of whaling or climate change?

    PubMed

    Attard, Catherine R M; Beheregaray, Luciano B; Jenner, K Curt S; Gill, Peter C; Jenner, Micheline-Nicole; Morrice, Margaret G; Robertson, Kelly M; Möller, Luciana M

    2012-12-01

    Understanding the degree of genetic exchange between subspecies and populations is vital for the appropriate management of endangered species. Blue whales (Balaenoptera musculus) have two recognized Southern Hemisphere subspecies that show differences in geographic distribution, morphology, vocalizations and genetics. During the austral summer feeding season, the Antarctic blue whale (B. m. intermedia) is found in polar waters and the pygmy blue whale (B. m. brevicauda) in temperate waters. Here, we genetically analyzed samples collected during the feeding season to report on several cases of hybridization between the two recognized blue whale Southern Hemisphere subspecies in a previously unconfirmed sympatric area off Antarctica. This means the pygmy blue whales using waters off Antarctica may migrate and then breed during the austral winter with the Antarctic subspecies. Alternatively, the subspecies may interbreed off Antarctica outside the expected austral winter breeding season. The genetically estimated recent migration rates from the pygmy to Antarctic subspecies were greater than estimates of evolutionary migration rates and previous estimates based on morphology of whaling catches. This discrepancy may be due to differences in the methods or an increase in the proportion of pygmy blue whales off Antarctica within the last four decades. Potential causes for the latter are whaling, anthropogenic climate change or a combination of these and may have led to hybridization between the subspecies. Our findings challenge the current knowledge about the breeding behaviour of the world's largest animal and provide key information that can be incorporated into management and conservation practices for this endangered species. PMID:23137299

  4. Fluorescence In Situ Hybridization (FISH) Assays for Diagnosing Malaria in Endemic Areas

    PubMed Central

    Shah, Jyotsna; Mark, Olivia; Weltman, Helena; Barcelo, Nicolas; Lo, Wai; Wronska, Danuta; Kakkilaya, Srinivas; Rao, Aravinda; Bhat, Shalia T.; Sinha, Ruchi; Omar, Sabah; Moro, Manuel; Gilman, Robert H.; Harris, Nick

    2015-01-01

    Malaria is a responsible for approximately 600 thousand deaths worldwide every year. Appropriate and timely treatment of malaria can prevent deaths but is dependent on accurate and rapid diagnosis of the infection. Currently, microscopic examination of the Giemsa stained blood smears is the method of choice for diagnosing malaria. Although it has limited sensitivity and specificity in field conditions, it still remains the gold standard for the diagnosis of malaria. Here, we report the development of a fluorescence in situ hybridization (FISH) based method for detecting malaria infection in blood smears and describe the use of an LED light source that makes the method suitable for use in resource-limited malaria endemic countries. The Plasmodium Genus (P-Genus) FISH assay has a Plasmodium genus specific probe that detects all five species of Plasmodium known to cause the disease in humans. The P. falciparum (PF) FISH assay and P. vivax (PV) FISH assay detect and differentiate between P. falciparum and P. vivax respectively from other Plasmodium species. The FISH assays are more sensitive than Giemsa. The sensitivities of P-Genus, PF and PV FISH assays were found to be 98.2%, 94.5% and 98.3%, respectively compared to 89.9%, 83.3% and 87.9% for the detection of Plasmodium, P. falciparum and P. vivax by Giemsa staining respectively. PMID:26333092

  5. A National Assessment of Promising Areas for Switchgrass, Hybrid Poplar, or Willow Energy Crop Production

    SciTech Connect

    Graham, R.L.; Walsh, M.E.

    1999-02-01

    The objective of this paper is to systematically assess the cropland acreage that could support energy crops and the expected farm gate and delivered prices of energy crops. The assessment is based on output from two modeling approaches: (1) the Oak Ridge County-Level Energy Crop (ORECCL) database (1996 version) and (2) the Oak Ridge Integrated Bioenergy Analysis System (ORIBAS). The former provides county-level estimates of suitable acres, yields, and farmgate prices of energy crops (switchgrass, hybrid poplar, willow) for all fifty states. The latter estimates delivered feedstock prices and quantities within a state at a fine resolution (1 km2) and considers the interplay between transportation costs, farmgate prices, cropland density, and facility demand. It can be used to look at any type of feedstock given the appropriate input parameters. For the purposes of this assessment, ORIBAS has been used to estimate farmgate and delivered switchgrass prices in 11 states (AL, FL, GA, IA, M N, MO, ND, NE, SC, SD, and TN). Because the potential for energy crop production can be considered from several perspectives, and is evolving as policies, economics and our basic understanding of energy crop yields and production costs change, this assessment should be viewed as a snapshot in time.

  6. Biostability of micro-photodiode arrays for subretinal implantation.

    PubMed

    Hämmerle, Hugo; Kobuch, Karin; Kohler, Konrad; Nisch, Wilfried; Sachs, Helmut; Stelzle, Martin

    2002-02-01

    Micro-photodiode arrays based on semiconductor chip technology are being developed to replace degenerated photoreceptor cells in the retina. Electric current is generated in tiny micro-photodiodes and delivered to the adjacent tissue by micro-electrodes. One of the main requirements of a sub-retinal implantable device is long-term stability versus corrosion in vivo (biostability). Biostability of micro-photodiode arrays (MPDA) was investigated in vitro and in vivo. No significant damage was found on chips immersed for up to 21 months in saline solution. Under in vivo conditions, however, the silicon oxide passivation layer of the chip was dissolved within a period of about 6-12 months. Subsequently, the underlying silicon was corroded. In contrast, stimulation electrodes consisting of titanium nitride were well preserved both in vitro and in vivo. The deterioration of the electrical properties of the micro-photodiodes correlated with the morphological damage observed. Strategies aiming at the development of an improved biostable encapsulation of neurotechnological implants have to be investigated and will be discussed briefly. PMID:11771699

  7. Increasing the dynamic range of CMOS photodiode imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce R. (Inventor)

    2007-01-01

    A multiple-step reset process and circuit for resetting a voltage stored on a photodiode of an imaging device. A first stage of the reset occurs while a source and a drain of a pixel source-follower transistor are held at ground potential and the photodiode and a gate of the pixel source-follower transistor are charged to an initial reset voltage having potential less that of a supply voltage. A second stage of the reset occurs after the initial reset voltage is stored on the photodiode and the gate of the pixel source-follower transistor and the source and drain voltages of the pixel source-follower transistor are released from ground potential thereby allowing the source and drain voltages of the pixel source-follower transistor to assume ordinary values above ground potential and resulting in a capacitive feed-through effect that increases the voltage on the photodiode to a value greater than the initial reset voltage.

  8. Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic

    NASA Astrophysics Data System (ADS)

    Bai, Xu; Tsuji, Yukihide; Sakamoto, Toshitsugu; Morioka, Ayuka; Miyamura, Makoto; Tada, Munehiro; Banno, Naoki; Okamoto, Koichiro; Iguchi, Noriyuki; Hada, Hiromitsu

    2016-04-01

    For the first time, an area-efficient nonvolatile carry chain combining look-up tables and a pass-transistor-logic-based adder is newly developed using complementary atom switches without additional CMOS circuits. A proposed tristate switch composed of three pairs of complementary atom switches selects one of “0”, “1”, and the “carry_in” signal as the input of a common multiplexer for both a look-up table and an adder. The developed nonvolatile carry chain achieves the reductions of 20% area, 17% delay, and 17% power consumption, respectively, in comparison with a conventional nonvolatile carry chain using dedicated CMOS gates.

  9. Linear array of photodiodes to track a human speaker for video recording

    NASA Astrophysics Data System (ADS)

    DeTone, D.; Neal, H.; Lougheed, R.

    2012-12-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant- the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting-a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  10. Hybrid Ytterbium-doped large-mode-area photonic crystal fiber amplifier for long wavelengths.

    PubMed

    Petersen, Sidsel R; Alkeskjold, Thomas T; Poli, Federica; Coscelli, Enrico; Jørgensen, Mette M; Laurila, Marko; Lægsgaard, Jesper; Broeng, Jes

    2012-03-12

    A large-mode-area Ytterbium-doped photonic crystal fiber amplifier with build-in gain shaping is presented. The fiber cladding consists of a hexagonal lattice of air holes, where three rows are replaced with circular high-index inclusions. Seven missing air holes define the large-mode-area core. Light confinement is achieved by combined index and bandgap guiding, which allows for single-mode operation and gain shaping through distributed spectral filtering of amplified spontaneous emission. The fiber properties are ideal for amplification in the long wavelength regime of the Ytterbium gain spectrum above 1100 nm, and red shifting of the maximum gain to 1130 nm is demonstrated. PMID:22418478

  11. A hybrid 802.16/802.11 network architecture for a United States coastal area network

    NASA Astrophysics Data System (ADS)

    Burbank, Jack L.; Kasch, William T.; Andrusenko, Julia; Haberman, Brian K.; Nichols, Robert; Zheng, Harold

    2007-04-01

    This paper presents a concept for a United States Coastal Area Network (U-SCAN) that is comprised of IEEE 802.11, 802.16, and satellite communications technologies. The Office of Naval Research (ONR) on behalf of the National Oceanographic Partnership Program (NOPP) has tasked The Johns Hopkins University Applied Physics Laboratory (JHU/APL) to perform an architectural study into the establishment of a United States Coastal Area Network (U-SCAN). The goal of this study is to define a wireless network architecture that can be deployed to enable contiguous coastal area network coverage for scientific, commercial, and homeland security (e.g. Coast Guard) applications within the United States Exclusive Economic Zone (EEZ), in a manner that is flexible, manageable, and affordable. The JHU/APL study will ultimately provide recommendations to NOPP regarding potential network architectures and technologies that could provide the desired capability, with a particular focus on commercial (both existing and emerging) technologies. This paper presents the envisioned U-SCAN architecture, and presents the envisioned technical capabilities and shortcomings of the component candidate technologies.

  12. Gene flow at major transitional areas in sea bass (Dicentrarchus labrax) and the possible emergence of a hybrid swarm.

    PubMed

    Quéré, Nolwenn; Desmarais, Erick; Tsigenopoulos, Costas S; Belkhir, Khalid; Bonhomme, François; Guinand, Bruno

    2012-12-01

    The population genetic structure of sea bass (Dicentrarchus labrax) along a transect from the Atlantic Ocean (AO) to the Eastern Mediterranean (EM) Sea differs from that of most other marine taxa in this area. Three populations (AO, Western Mediterranean [WM], EM) are recognized today, which were originally two allopatric populations. How two ancestral genetic units have evolved into three distinct units has not been addressed yet. Therefore, to investigate mechanisms that lead to the emergence of the central WM population, its current status, and its connectivity with the two parental populations, we applied 20 nuclear loci that were either gene associated or gene independent. Results confirmed the existence of three distinct gene pools, with higher differentiation at two transitional areas, the Almeria-Oran Front (AOF) and of the Siculo-Tunisian Strait (STS), than within any population. Significant linkage disequilibrium and heterozygote excess indicated that the STS is probably another tension zone, as already described for the AOF. Neutrality tests fail to reveal marker loci that could be driven by selection within or among metapopulations, except for locus DLA0068. Collectively, results support that the central WM population arose by trapping two tensions zones at distinct geographic locations of limited connectivity. Population assignment further revealed that WM individuals were more introgressed than individuals from the other two metapopulations. This suggests that this population might result from hybrid swarming, and was or is still seeded by genes received through the filter of each tension zone. PMID:23301173

  13. Micro-nano hybrid structures with manipulated wettability using a two-step silicon etching on a large area

    PubMed Central

    2011-01-01

    Nanoscale surface manipulation technique to control the surface roughness and the wettability is a challenging field for performance enhancement in boiling heat transfer. In this study, micro-nano hybrid structures (MNHS) with hierarchical geometries that lead to maximizing of surface area, roughness, and wettability are developed for the boiling applications. MNHS structures consist of micropillars or microcavities along with nanowires having the length to diameter ratio of about 100:1. MNHS is fabricated by a two-step silicon etching process, which are dry etching for micropattern and electroless silicon wet etching for nanowire synthesis. The fabrication process is readily capable of producing MNHS covering a wafer-scale area. By controlling the removal of polymeric passivation layers deposited during silicon dry etching (Bosch process), we can control the geometries for the hierarchical structure with or without the thin hydrophobic barriers that affect surface wettability. MNHS without sidewalls exhibit superhydrophilic behavior with a contact angle under 10°, whereas those with sidewalls preserved by the passivation layer display more hydrophobic characteristics with a contact angle near 60°. PMID:21711859

  14. CsI(Tl) with photodiodes for identifying subsurface radionuclide contamination

    SciTech Connect

    Stromswold, D.C.; Meisner, J.E.; Nicaise, W.F.

    1994-10-01

    At the US Department of Energy`s Hanford Site near Richland, Washington, underground radioactive contamination exists as the result of leaks, spills, and intentional disposal of waste products from plutonium-production operations. Characterizing these contaminants in preparation for environmental remediation is a major effort now in progress. In this paper, a cylindrical (15 {times} 61 mm) CsI(Tl) scintillation detector with two side-mounted photodiodes has been developed to collect spectral gamma-ray data in subsurface contaminated formations at the U.S. Department of Energy`s Hanford Site. It operates inside small-diameter, thick-wall steel pipes pushed into the ground to depths up to 20 m by a cone penetrometer. The detector provides a rugged, efficient, magnetic-field-insensitive means for identifying gamma-ray-emitting contaminants (mainly {sup 137}Cs and {sup 60}Co). Mounting two 3 x 30-mm photodiodes end-to-end on a flat area along the detector`s side provides efficient light collection over the length of the detector.

  15. Experimental verification of the photodiode theory of SIS mixers

    NASA Technical Reports Server (NTRS)

    Woody, David P.; Wengler, Michael J.

    1993-01-01

    The authors describe the characterization and interpretation of the performance of SIS receivers within the framework of the photodiode theory of mixing. The quantum efficiency plays a dominant role in the theory, and a simple method of accurately measuring this parameter is presented. It is demonstrated that the quantum efficiency measurements can be conveniently made on a standard radio astronomy receiver and combined with the usual hot and cold load characterization to improve the understanding of the receiver's performance. The measurements verify that the photodiode theory of mixing accurately describes the receiver noise even at local-oscillator power levels well above the linear response range. The results for receivers operating at 100 and 240 GHz verify the utility of this approach. These methods should also prove useful in evaluating submillimeter receivers.

  16. Quantitative measurement of body motion using Schottky barrier silicon photodiode.

    PubMed

    Yoo, J H; Suh, I H; Wallace, S; Hankla, J W; Wauters, K A

    1979-11-01

    A new motion detection system has been developed using a laser beam and a Schottky barrier silicon photodiode. The system broadens the scope of gravitational center stabilography by facilitating the quantitative assessment of tremors of body appendages such as the hands and even the head. The system also eliminates cumbersome platforms and wire attachments previously used in gravitational center stabilography. The subject is asked to aim the beam at the photodiode. A quantitative off-center variation parameter, ARDS (Average Radial Distance Squared multiplied by time), was utilized in units of cm2 sec. A preliminary evaluation of the system shows that it is suitable for rapidly screening large numbers of subjects for localised neuromuscular control. PMID:526517

  17. Flexible germanium nanomembrane metal-semiconductor-metal photodiodes

    NASA Astrophysics Data System (ADS)

    Kim, Munho; Seo, Jung-Hun; Yu, Zongfu; Zhou, Weidong; Ma, Zhenqiang

    2016-08-01

    We demonstrate flexible Ge nanomembrane (Ge NM) based metal-semiconductor-metal photodiodes. The effect of uniaxial tensile strain on Ge NM based photodiodes was investigated using bending fixtures. Dark current density is decreased from 21.5 to 4.8 mA/cm2 at 3 V by a tensile strain of 0.42% while photon responsivity is increased from 0.2 to 0.45 A/W at the wavelength of 1.5 μm. Enhanced responsivity is also observed at longer wavelengths up to 1.64 μm. The uniaxial tensile strain effectively reduces the direct bandgap energy of the Ge NM, leading to a shift of the absorption edge toward a longer wavelength.

  18. Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers: Preprint

    SciTech Connect

    Myers, D. R.

    2011-04-01

    Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

  19. Photon counting photodiode array detector for far ultraviolet (FUV) astronomy

    NASA Technical Reports Server (NTRS)

    Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

    1982-01-01

    A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location. Previously announced in STAR as N82-19118

  20. New optical probe approach using mixing effect in planar photodiode for biomedical applications

    NASA Astrophysics Data System (ADS)

    Pereira, Tânia; Vaz, Pedro; Oliveira, Tatiana; Santos, Inês; Leal, Adriana; Almeida, Vânia; Pereira, Helena; Correia, Carlos; Cardoso, João.

    2013-05-01

    The laser diode self-mixing technique is a well-known and powerful interferometric technique that has been used in biomedical applications, namely for the extraction of cardiovascular parameters. However, to construct an optical probe using the self-mixing principle which is able to acquire signals in the human carotid artery, some problems are expected. The laser diode has a small aperture area, which means that, for physiological sensing purposes, it can be considered as a point-like detector. This feature imparts difficulties to quality recording of physiological signals since the number of photons collected and mixed in the cavity of the photodiode is very small. In order to overcome this problem, a new mixing geometry based on an external large area planar photodiode (PD) is used in the probe, enabling a much larger number of photons to be collected, hence improving the quality of the signal. In this work, the possibility to obtain the mixing effect outside the laser cavity using an external photodetector, such as a planar photodiode, is demonstrated. Two test benches were designed, both with of two reflectors. The first one, which reflects the light beam with the same frequency of the original one is fixed, and the second one, is movable, reflecting the Doppler shifted light to the photodetector. The first test bench has a fixed mirror in front of the movable mirror, creating an umbra and penumbra shadow above the movable mirror. To avoid this problem, another test bench was constructed using a wedged beam splitter (WSB) instead of a fixed mirror. This new assembly ensures the separation of a single input beam into multiple copies that undergo successive reflections and refractions. Some light waves are reflected by the planar surface of WSB, while other light beams are transmitted through the WSB, reaching the movable mirror. Also in this case, the movable mirror reflects the light with a Doppler frequency shift, and the PD receives both beams. The two test

  1. A wide area Bipolar Cascade Resonant Cavity Light Emitting Diode for a Hybrid Range-Intensity Sensor

    NASA Astrophysics Data System (ADS)

    Turner, Reginald J.

    Autonomous Ground Vehicles (AGV) will require high-speed, real-time three dimensional (3-D) image processing to navigate treacherous terrain in order to complete their assigned mission without a human in the loop. LIDAR scanners of the 3-D variety, provide the necessary area coverage for 3-D image processing, but lack the speed to deliver the collected data for real-time processing. A novel Hybrid Range-Intensity System (HRIS) has been proposed for imaging large swaths of area very rapidly. This system is comprised of two infrared cameras, an illumination source, a control and coordination system to position the cameras, and signal processing algorithms to extract the contour image of the scene. This dissertation focused on the development of an illuminator for the HRIS. This illuminator enables faster image rendering and reduces the potential of errors in return signal data, that could be generated from extremely rough terrain. Four major achievements resulted from this work, which advance the field of 3-D image acquisition. The first is that the TJ is an effective current spreading layer for LEDs with mesa width up to 140 mum and current densities of ˜ 1 x 106A/cm2. The TJ allows fabrication of an efficient illuminator, with required geometry for the HRIS to operate as a real-time 3-D imaging system. Secondly, a design for a Bipolar Cascade-Resonant Cavity Light Emitting Diode (BC-RCLED) has been accomplished, that will illuminate the FOV of the hybrid-ranged intensity system with a single sweep of the beam. This device is capable of producing ˜ 330 mW of output power. Additionally, from this work, key parameters for HRIS design were identified. Using a collection optic with a 15 cm diameter, an HRIS mounting height of 1.5 m, and a detector integration time of 330 msec, a SNR of 20 dB was achieved. Lastly, we demonstrated that the BC-RCLED designed for the HRIS can deliver sufficient energy to produce the required SNR. Also, through parametric analysis, we

  2. The hybrid photonic planar integrated receiver with a polymer optical waveguide

    NASA Astrophysics Data System (ADS)

    Busek, Karel; Jerábek, Vitezslav; Armas Arciniega, Julio; Prajzler, Václav

    2008-11-01

    This article describes design of the photonic receiver composed of the system polymer planar waveguides, InGaAs p-i-n photodiode and integrated HBT amplifier on a low loss composite substrate. The photonic receiver was the main part of the hybrid integrated microwave optoelectronic transceiver TRx (transciever TRx) for the optical networks PON (passive optical networks) with FTTH (fiber-to-the-home) topology. In this article are presented the research results of threedimensional field between output facet of a optical waveguide and p-i-n photodiode. In terms of our research, there was optimized the optical coupling among the facet waveguide and pi-n photodiode and the electrical coupling among p-i-n photodiode and input of HBT amplifier. The hybrid planar lightwave circuit (PLC) of the transceiver TRx will be composed from a two parts - polymer optical waveguide including VHGT filter section and a optoelectronic microwave section.

  3. Potential for SPECT cameras utilizing photodiode readout of scintillator crystals

    SciTech Connect

    Moses, W.W.; Derenzo, S.E.; Gruber, G.J.; Huesman, R.H.

    1997-05-01

    We present a conceptual design for a SPECT detector consisting of an array of 3x3x5 mm CsI(Tl) scintillator crystals individually read out by an array of 3 mm square silicon photodiodes. The interaction position is not determined by Anger logic, but by the location of the individual crystal/photodiode element in which the gamma ray is observed. Since the design is modular (each module typically having 64 crystals, photodiodes, and charge amplifiers, and one multiplexer circuit to reduce the number of readout channels), a large variety of camera geometries can be realized. Advantages of this design over conventional cameras (NaI(Tl) scintillator/photomultiplier tube) are lower gain drift (i.e. higher stability), smaller size, significantly higher count rate capability, and potentially lower cost. For the 141 keV emissions of Tc-99m, both CsI(Tl) and NaI(Tl) have 85-90% photoelectric fraction, but CsI(TI) has an attenuation length of 3.0 mm as compared to 4.5 mm for NaI(Tl). Thus, a 5 mm thick CsI(Tl) camera has singular efficiency to a Nal(Tl) camera with a 7.5 mm thickness (between 1/4 and 3/8 inch). The light output of CsI(Tl) is 25% higher than that of Nal(Tl), and while its 565 nm emissions are not efficiently detected with photomultiplier tubes, they are well matched to photodiode detection.

  4. Receiver characteristics of laser altimeters with avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Sun, Xiaoli; Davidson, Frederic M.; Boutsikaris, Leo; Abshire, James B.

    1992-01-01

    The receiver characteristics of a laser altimeter system containing an avalanche photodiode photodetector are analyzed using the Gaussian approximation, the saddle-point approximation, and a nearly exact analysis. The last two methods are shown to yield very similar results except when the background noise is extremely low and the probability of false alarm is high. However, the Gaussian approximation method is shown to cause significant errors even under relatively high levels of background noise and received signal energy.

  5. Avalanche Photodiode Statistics in Triggered-avalanche Detection Mode

    NASA Technical Reports Server (NTRS)

    Tan, H. H.

    1984-01-01

    The output of a triggered avalanche mode avalanche photodiode is modeled as Poisson distributed primary avalanche events plus conditionally Poisson distributed trapped carrier induced secondary events. The moment generating function as well as the mean and variance of the diode output statistics are derived. The dispersion of the output statistics is shown to always exceed that of the Poisson distribution. Several examples are considered in detail.

  6. Spectral line-diode registry effects with photodiode array detectors

    SciTech Connect

    Winge, R.K.; Fassel, V.A.; Eckels, D.E.

    1986-05-01

    A limitation of photodiode array detectors for spectroscopic intensity measurements relates to the spacing of the diodes and the errors generated when a spectral line is not in exact registry with the diode or diodes from which its intensity is being measured. These misregistry intensity errors, which may be as high as 25 to 30%, are documented for a range of spectral bandwidths and for single diode (pixel) intensities and multiple diode summations of intensities.

  7. Geiger-mode avalanche photodiodes, history, properties and problems

    NASA Astrophysics Data System (ADS)

    Renker, D.

    2006-11-01

    Geiger-mode avalanche photodiodes (G-APDs) have been developed during recent years and promise to be an alternative to photomultiplier tubes. They have many advantages like single photon response, high detection efficiency, high gain at low bias voltage and very good timing properties but some of their properties, the dark count rate for example, can be a problem. Several types of G-APDs are on the market and should be selected carefully for a given application.

  8. Inexpensive photodiode arrays for use in rocket plume and hot source monitoring and diagnostics

    NASA Astrophysics Data System (ADS)

    Snider, Dallas; Shanks, Robert; Cole, Reagan; Hudson, M. Keith

    2003-09-01

    The spectroscopic analysis of plume emissions is a non-intrusive method which has been used to check for fatigue and possible damage throughout the pumps and other mechanisms in a rocket motor or engine. These components are made of various alloys. Knowing the composition of the alloys and for which parts they are used, one can potentially determine from the emissions in the plume which component is failing. Currently, optical multichannel analyser systems are being used which utilize charge coupled devices, cost tens of thousands of dollars, are somewhat delicate, and usually require cooling. We have developed two rugged instruments using less expensive linear photodiode arrays as detectors. A high-resolution system was used to detect atomic emission lines while a low-resolution system was used to detect molecular emission bands. We have also written data acquisition software and built electronic circuits to control the arrays and collect data. While the National Aeronautics and Space Administration has used similar systems for characterization of the space shuttle main engine, the emissions from other rocket systems have not been surveyed so well. The two instruments described will be utilized to study hybrid rocket emissions at the University of Arkansas-Little Rock hybrid rocket facility.

  9. Avalanche photodiode based detector for beam emission spectroscopy

    SciTech Connect

    Dunai, D.; Zoletnik, S.; Sarkoezi, J.; Field, A. R.

    2010-10-15

    An avalanche photodiode based (APD) detector for the visible wavelength range was developed for low light level, high frequency beam emission spectroscopy (BES) experiments in fusion plasmas. This solid state detector has higher quantum efficiency than photomultiplier tubes, and unlike normal photodiodes, it has internal gain. This paper describes the developed detector as well as the noise model of the electronic circuit. By understanding the noise sources and the amplification process, the optimal amplifier and APD reverse voltage setting can be determined, where the signal-to-noise ratio is the highest for a given photon flux. The calculations are compared to the absolute calibration results of the implemented circuit. It was found that for a certain photon flux range, relevant for BES measurements ({approx_equal}10{sup 8}-10{sup 10} photons/s), the new detector is superior to both photomultipliers and photodiodes, although it does not require cryogenic cooling of any component. The position of this photon flux window sensitively depends on the parameters of the actual experimental implementation (desired bandwidth, detector size, etc.) Several detector units based on these developments have been built and installed in various tokamaks. Some illustrative results are presented from the 8-channel trial BES system installed at Mega-Ampere Spherical Tokamak (MAST) and the 16-channel BES system installed at the Torus Experiment for Technology Oriented Research (TEXTOR).

  10. Photodiode-Like Behavior and Excellent Photoresponse of Vertical Si/Monolayer MoS2 Heterostructures

    PubMed Central

    Li, Yang; Xu, Cheng-Yan; Wang, Jia-Ying; Zhen, Liang

    2014-01-01

    Monolayer transition metal dichalcogenides (TMDs) and their van der Waals heterostructures have been experimentally and theoretically demonstrated as potential candidates for photovoltaic and optoelectronic devices due to the suitable bandgap and excellent light absorption. In this work, we report the observation of photodiode behavior in (both n- and p- type) silicon/monolayer MoS2 vertical heterostructures. The photocurrent and photoresponsivity of heterostructures photodiodes were dependent both on the incident light wavelength and power density, and the highest photoresponsivity of 7.2 A/W was achieved in n-Si/monolayer MoS2 vertical heterostructures photodiodes. Compared with n-Si/MoS2 heterostructures, the photoresponsivity of p-Si/MoS2 heterostructure was much lower. Kelvin probe microscope (KFM) results demonstrated the more efficient separation of photogenerated excitons in n-Si/MoS2 than that in p-Si/MoS2. Coupling KFM results with band alignments of (p-, n-) Si/MoS2 heterostructures, the origins of photodiode-like phenomena of p-Si/MoS2 and n-Si/MoS2 have been unveiled, that is intrinsic built-in electric field in p-n junction, and modulated barrier height and width at the interface in n-n junction. Our work may benefit to the deep understanding of the integration of two-dimensional materials with more conventional three-dimensional semiconductors, and then contribute to the developments in the area of van der Waals heterostructures. PMID:25424301

  11. Photodiode-like behavior and excellent photoresponse of vertical Si/monolayer MoS2 heterostructures.

    PubMed

    Li, Yang; Xu, Cheng-Yan; Wang, Jia-Ying; Zhen, Liang

    2014-01-01

    Monolayer transition metal dichalcogenides (TMDs) and their van der Waals heterostructures have been experimentally and theoretically demonstrated as potential candidates for photovoltaic and optoelectronic devices due to the suitable bandgap and excellent light absorption. In this work, we report the observation of photodiode behavior in (both n- and p- type) silicon/monolayer MoS2 vertical heterostructures. The photocurrent and photoresponsivity of heterostructures photodiodes were dependent both on the incident light wavelength and power density, and the highest photoresponsivity of 7.2 A/W was achieved in n-Si/monolayer MoS2 vertical heterostructures photodiodes. Compared with n-Si/MoS2 heterostructures, the photoresponsivity of p-Si/MoS2 heterostructure was much lower. Kelvin probe microscope (KFM) results demonstrated the more efficient separation of photogenerated excitons in n-Si/MoS2 than that in p-Si/MoS2. Coupling KFM results with band alignments of (p-, n-) Si/MoS2 heterostructures, the origins of photodiode-like phenomena of p-Si/MoS2 and n-Si/MoS2 have been unveiled, that is intrinsic built-in electric field in p-n junction, and modulated barrier height and width at the interface in n-n junction. Our work may benefit to the deep understanding of the integration of two-dimensional materials with more conventional three-dimensional semiconductors, and then contribute to the developments in the area of van der Waals heterostructures. PMID:25424301

  12. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    SciTech Connect

    Suzuki, Shingo; Namekata, Naoto Inoue, Shuichiro; Tsujino, Kenji

    2014-01-27

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  13. High-Performance, Fullerene-Free Organic Photodiodes Based on a Solution-Processable Indigo.

    PubMed

    Kim, Il Ku; Li, Xin; Ullah, Mujeeb; Shaw, Paul E; Wawrzinek, Robert; Namdas, Ebinazar B; Lo, Shih-Chun

    2015-11-01

    A solution-processable dibromoindigo with an alkyoxyphenyl solubilizing group is developed and used as a new electron acceptor in organic photodiodes. The solution-processed fullerene-free organic photodiodes show an almost spectrally flat response with a high responsivity (0.4 A W(-1) ) and a high detectivity (1 × 10(12) Jones). These values are comparable to silicon-based photodiodes. PMID:26392063

  14. Absolute spectral response measurements of different photodiodes useful for applications in the UV spectral region

    NASA Astrophysics Data System (ADS)

    Pelizzo, Maria G.; Ceccherini, Paolo; Garoli, Denis; Masut, Pietro; Nicolosi, Piergiorgio

    2004-09-01

    Long UV radiation exposure can result in damages of biological tissues, as burns, skin aging, erythema and even melanoma cancer. In the past years an increase of melanoma cancer has been observed and associated to the atmospheric ozone deployment. Attendance of sun tanning unit centers has become a huge social phenomena, and the maximum UV radiation dose that a human being can receive is regulated by law. On the other side, UV radiation is largely used for therapeutic and germicidal purposes. In all these areas, spectroradiometer and radiomenter are needed for monitoring UVA (315-400 nm), UVB (280-315 nm) and UVC (100-280 nm) irradiance. We have selected some commercial photodiodes which can be used as solid state detectors in these instruments. We have characterized them by measuring their absolute spectral response in the 200 - 400 nm spectral range.

  15. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    SciTech Connect

    Müller, O. Lützenkirchen-Hecht, D.; Frahm, R.

    2015-03-15

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  16. Hard disk drive based microsecond X-ray chopper for characterization of ionization chambers and photodiodes.

    PubMed

    Müller, O; Lützenkirchen-Hecht, D; Frahm, R

    2015-03-01

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper. PMID:25832273

  17. Compact multispectral photodiode arrays using micropatterned dichroic filters

    NASA Astrophysics Data System (ADS)

    Chandler, Eric V.; Fish, David E.

    2014-05-01

    The next generation of multispectral instruments requires significant improvements in both spectral band customization and portability to support the widespread deployment of application-specific optical sensors. The benefits of spectroscopy are well established for numerous applications including biomedical instrumentation, industrial sorting and sensing, chemical detection, and environmental monitoring. In this paper, spectroscopic (and by extension hyperspectral) and multispectral measurements are considered. The technology, tradeoffs, and application fits of each are evaluated. In the majority of applications, monitoring 4-8 targeted spectral bands of optimized wavelength and bandwidth provides the necessary spectral contrast and correlation. An innovative approach integrates precision spectral filters at the photodetector level to enable smaller sensors, simplify optical designs, and reduce device integration costs. This method supports user-defined spectral bands to create application-specific sensors in a small footprint with scalable cost efficiencies. A range of design configurations, filter options and combinations are presented together with typical applications ranging from basic multi-band detection to stringent multi-channel fluorescence measurement. An example implementation packages 8 narrowband silicon photodiodes into a 9x9mm ceramic LCC (leadless chip carrier) footprint. This package is designed for multispectral applications ranging from portable color monitors to purpose- built OEM industrial and scientific instruments. Use of an eight-channel multispectral photodiode array typically eliminates 10-20 components from a device bill-of-materials (BOM), streamlining the optical path and shrinking the footprint by 50% or more. A stepwise design approach for multispectral sensors is discussed - including spectral band definition, optical design tradeoffs and constraints, and device integration from prototype through scalable volume production

  18. Initial results from the Sherbrooke avalanche photodiode positron tomograph

    SciTech Connect

    Lecomte, R.; Cadorette, J.; Rodrigue, S.; Lapointe, D.; Rouleau, D.; Bentourkia, M.; Yao, R.; Msaki, P.

    1996-06-01

    The design features and engineering constraints of a PET system based on avalanche photodiode (APD) detectors have been described in a previous report. In this paper, the authors present the initial results obtained with the Sherbrooke APD-PET scanner, a very high spatial resolution device designed for dynamic imaging of small and medium-sized laboratory animals such as rats, cats, rabbits and small monkeys. Its physical performance has been evaluated in terms of resolution, sensitivity, count rate, random and scatter fractions, contrast and relative activity recovery as a function of object size. The capabilities of the scanner for biomedical research applications have been demonstrated using phantom and animal studies.

  19. Silicon avalanche photodiode operation and lifetime analysis for small satellites.

    PubMed

    Tan, Yue Chuan; Chandrasekara, Rakhitha; Cheng, Cliff; Ling, Alexander

    2013-07-15

    Silicon avalanche photodiodes (APDs) are sensitive to operating temperature fluctuations and are also susceptible to radiation flux expected in satellite-based quantum experiments. We introduce a low power voltage adjusting mechanism to overcome the effects of in-orbit temperature fluctuations. We also present data on the performance of Si APDs after irradiation (γ-ray and proton beam). Combined with an analysis of expected orbital irradiation, we propose that a Si APD in a 400 km equatorial orbit may operate beyond the lifetime of the satellite. PMID:23938543

  20. Reliability assessment of multiple quantum well avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

    1995-01-01

    The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

  1. MRS Photodiode, LED and extruded scintillator performance in magnetic field

    SciTech Connect

    Beznosko, D.; Blazey, G.; Dyshkant, A.; Francis, K.; Kubik, D.; Rykalin, V.; Zutshi, V.; /Northern Illinois U.

    2005-05-01

    The experimental results on the performance of the MRS (Metal/Resistor/Semiconductor) photodiode in the strong magnetic field of 4.4T, and the possible impact of the quench of the magnet at 4.5T on sensor's operation are reported. In addition, the experimental results on the performance of the extruded scintillator and WLS fiber, and various LEDs in the magnetic fields of 1.8T and 2.3T respectively, are detailed. The measurement method used is being described.

  2. 400-ps time resolution with a passively quenched avalanche photodiode.

    PubMed

    Grayson, T P; Wang, L J

    1993-06-01

    Avalanche photodiodes (APD's) operated in a single-photon-counting Geiger mode are becoming attractive alternatives to photomultiplier tubes for low-light-level detection and signal timing. By paying careful attention to the design and construction of a simple APD passive quenching circuit to reduce stray capacitances, we directly measured a time resolution of 410 ps FWHM for a commercial APD. A more detailed data analysis shows the actual time resolution to be ~ 390 ps FWHM. This is believed to be the most accurate time response for such a simple, inexpensive, and widely available device achieved to date. PMID:20829894

  3. Application of photodiodes to the detection of electromagnetic bursts

    NASA Technical Reports Server (NTRS)

    Fukushima, Y.; Saito, T.; Sakata, M.; Shima, M.; Yamamoto, Y.

    1985-01-01

    A new type of photodiode + scintillator (1 m2 x 1 cm) detector is developed to detect the large electro-magnetic burst under an EX-chamber. The threshold burst size is found to be 4.3 x 10 the 5 particles at the center of the scintillator. Therefore a gamma-ray family of 10 TeV is detectable by it, when it is set under 14 r.1. of iron. In addition, a very fast (2.4 nsec width) and very bright (correspond to 10 to the 6 particles) scintillation pulse has become avarable for this study.

  4. A 1.06 micrometer avalanche photodiode receiver

    NASA Technical Reports Server (NTRS)

    Eden, R. C.

    1975-01-01

    The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.

  5. Polarization sensitive silicon photodiodes using nanostructured metallic grids

    NASA Astrophysics Data System (ADS)

    Guillaumée, M.; Dunbar, L. A.; Santschi, Ch.; Grenet, E.; Eckert, R.; Martin, O. J. F.; Stanley, R. P.

    2009-05-01

    In this paper, we present the design, fabrication, and characterization of wire grid polarizers. These polarizers show high extinction ratios and high transmission with structure dimensions that are compatible with current complementary metal-oxide-semiconductor (CMOS) technology. To design these wire grids, we first analyze the transmission properties of single apertures. From the understanding of a single aperture, we apply a modal expansion method to model wire grids. The most promising grids are fabricated on both a glass substrate and CMOS photodiode. An extinction ratio higher than 200 is measured.

  6. Development of a testbed for flexible a-Si:H photodiode sensing arrays

    NASA Astrophysics Data System (ADS)

    Dominguez, Alfonso; Kunnen, George; Vetrano, Michael; Smith, Joseph; Marrs, Michael; Allee, David R.

    2013-05-01

    Large area, flexible sensing arrays for imaging, biochemical sensing and radiation detection are now possible with the development of flexible active matrix display technology. In particular, large-area flexible imaging arrays can provide considerable advancement in defense and security industries because of their inherent low manufacturing costs and physical plasticity that allows for increased adaptability to non-planar mounting surfaces. For example, a flexible array of photodetectors and lenslets formed into a cylinder could image simultaneously with a 360 degree view without the need for expensive bulky optics or a gimbaled mount. Here we report the design and development of a scalable 16x16 pixel testbed for flexible sensor arrays using commercial-off-the-shelf (COTS) parts and demonstrate the capture of a shadow image with an array of photodiodes and active pixel sensors on a plastic substrate. The image capture system makes use of an array of low-noise, InGaZnO active pixel amplifiers to detect changes in current in 2.4 μm-thick reverse-biased a-Si:H PIN diodes. A thorough characterization of the responsivity, detectivity, and optical gain of an a- Si:H photodiode is also provided. At the back end, analog capture circuitry progressively scans the array and constructs an image based on the electrical activity in each pixel. The use of correlated-double-sampling to remove fixed pattern noise is shown to significantly improve spatial resolution due to process variations. The testbed can be readily adapted for the development of neutron, alpha-particle, or X-ray detection arrays given an appropriate conversion layer.

  7. Effect of Fabric Cover and Pore Area Distribution of Carbon/Stainless Steel/Polypropylene Hybrid Yarn-Woven Fabric on Electromagnetic Shielding Effectiveness

    NASA Astrophysics Data System (ADS)

    Krishnasamy, Jagatheesan; Ramasamy, Alagirusamy; Das, Apurba; Basu, Ananjan

    2016-06-01

    The electromagnetic shielding behavior of fabrics woven with carbon/stainless steel/polypropylene (C/SS/PP) hybrid yarns were investigated in the frequency range of 300 kHz to 1.5 GHz. This study mainly emphasizes the electromagnetic shielding behavior of C/SS/PP hybrid yarn fabric and the effect of different fabric parameters such as pick density, fabric architecture and number of fabric layers on shielding effectiveness (SE) of fabrics with C/SS/PP hybrid yarns. The SE of fabric samples were tested by a vector network analyzer using a coaxial transmission line tester. In addition, surface images of different fabric structures were examined to appreciate the effect of yarn floats on the shielding behavior of fabrics. From the SE test, it was observed that an increase in pick density increases the SE of C/SS/PP hybrid yarn fabric due to addition of carbon and SS content in the fabric. Besides, the fabric cover and pore area distribution are also changed for varying pick densities. Essentially, a fabric's architecture plays an important role in the fabric cover and pore area distribution. The one-end float (1/1 plain) fabric of 6.3 ppcm provides higher shielding of 88.44 dB than a 4-end (4/1 twill) or 7-end float (8-end satin) fabrics of 6.3 ppcm. Moreover, an increase in the number of fabric layers also improves the SE of fabrics. The developed C/SS/PP hybrid yarn fabric can be used for shielding wireless transmissions, radar transmissions and for shielding panels.

  8. High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10 × 5 Timepix chips

    NASA Astrophysics Data System (ADS)

    Karch, J.; Krejci, F.; Bartl, B.; Dudak, J.; Kuba, J.; Kvacek, J.; Zemlicka, J.

    2016-01-01

    State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3 × 7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample.

  9. Low noise, IR-blind organohalide perovskite photodiodes for visible light detection and imaging.

    PubMed

    Lin, Qianqian; Armin, Ardalan; Lyons, Dani M; Burn, Paul L; Meredith, Paul

    2015-03-25

    Solution-processed organohalide perov-skite photodiodes that have performance metrics matching silicon, but are infrared-blind are reported. The perovskite photodiodes operate in the visible band, have low dark current and noise, high specific detectivity, large linear dynamic range, and fast temporal response. Their properties make them promising candidates for imaging applications. PMID:25677496

  10. 4H-SiC photodiode model for DC SPICE circuit simulation

    NASA Astrophysics Data System (ADS)

    Kociubiński, Andrzej; Duk, Mariusz; Korona, Mateusz; Muzyka, Krzysztof

    2015-09-01

    Technology, characterization and in particularly modeling of 4H-SiC photodiode have been presented in this paper. Modeling and simulation has been performed using PSPICE environment. Comparison of simulation with real results for electrical characteristic (I-V) of circular SiC photodiodes has been also presented.

  11. Free-electron THz-reabsorption in distributed photodiode structures

    NASA Astrophysics Data System (ADS)

    Calle, V. H.; Michael, E. A.

    2015-10-01

    Ultra-fast photodiodes based on vertical p-i-n or uni-traveling (UTC) mesa structures require a highly doped base layer that makes a well-conducting transverse connection between the mesa bottom layer and the bottom metal contacts. To reach the lowest possible THz loss, the question arises on what doping levels would be optimal for this layer. Doping levels of up to ≈ 5× {{10}19} cm-3 can be reached in InP, corresponding to conductivities of around 8× {{10}5} S m-1, which is still much lower than those of metal conductors. A full-wave analysis, which is executed in HFSS™ and CST Microwave Studio™ and reported here, shows that a valley of low loss exists around a conductivity of 5× {{10}4} S m-1 (estimated doping value ≈ 2× {{10}18} cm-3), in the middle of a conductivity range of excessive terahertz absorption, making this value the best choice for the whole frequency range up to 2000 GHz. The results are supported by an analytical solution in a simplified transmission line model. The results are expected to be significant for designing future distributed photonic devices such as traveling-wave (TW) photodiodes.

  12. Gamma ray spectroscopy and timing using LSO and PIN photodiodes

    SciTech Connect

    Moses, W.W.; Derenzo, S.E.; Melcher, C.L.; Manente, R.A.

    1994-11-01

    The high density, high light output, and short decay time of LSO (lutetium orthosilicate, Lu{sub 2}SiO{sub 5}:Ce) make it an attractive scintillator for gamma ray spectroscopy. The low cost, small size, high quantum efficiency, and ruggedness of silicon photodiodes make them attractive photodetectors for this same application, although their high noise (Compared to a photomultiplier tube) reduces their appeal. In this work the authors measure the gamma ray energy resolution, timing accuracy, and conversion factor from gamma energy to number of electron-hole pairs produced with a 3 x 3 x 22 mm{sup 3} LSO scintillator crystal read out with a 3 x 3 mm{sup 2} silicon PIN photodiode. When the detector is excited with 511 keV photons, a photopeak centered at 1,940 e{sup {minus}} with 149 keV fwhm is observed and a timing signal with 35 ns fwhm jitter is produced. When the detector is excited with 1,275 keV photons, a photopeak centered at 4,910 e{sup {minus}} with 149 keV fwhm is observed and a timing signal with 25 ns fwhm jitter is produced. While these performance measures are inferior to those obtained with photomultiplier tubes, they are acceptable for some applications.

  13. Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices

    NASA Astrophysics Data System (ADS)

    Shin, Sang-Baie; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2013-04-01

    In this study, the prototype optoelectronic integrated circuits (OEICs) operating with optical input signals were designed and fabricated. A back-side-illuminated (BSI) photodiode was designed and demonstrated by a newly proposed practical method, utilizing micro-electromechanical systems (MEMS) and postcomplement metal oxide semiconductor (CMOS) processes. Additional fabrication processes for the BSI photodiode were proposed and described in detail in this paper. The operational amplifier for amplification of the optical current by the BSI photodiode as the transimpedance amplifier was designed and fabricated. And the pulse width modulation (PWM) wave generator was implemented for modulating optical signals as the prototype OEIC device. The maximum quantum efficiency of 28.4% was obtained from the fabricated BSI photodiode. Output signals of PWM were successfully controlled by the generated optical current of the BSI photodiode.

  14. Impact ionization engineered avalanche photodiode arrays for free space optical communication

    NASA Astrophysics Data System (ADS)

    Ferraro, Mike S.; Rabinovich, William S.; Clark, William R.; Waters, William D.; Campbell, Joe C.; Mahon, Rita; Vaccaro, Kenneth; Krejca, Brian D.

    2016-03-01

    High sensitivity photodetectors serve two purposes in free space optical communication: data reception and position sensing for pointing, tracking, and stabilization. Because of conflicting performance criteria, two separate detectors are traditionally utilized to perform these tasks but recent advances in the fabrication and development of large area, low noise avalanche photodiode (APD) arrays have enabled these devices to be used both as position sensitive detectors (PSD) and as communications receivers. Combining these functionalities allows for more flexibility and simplicity in optical assembly design without sacrificing the sensitivity and bandwidth performance of smaller, single element data receivers. Beyond eliminating the need to separate the return beam into two separate paths, these devices enable implementation of adaptive approaches to compensate for focal plane beam wander and breakup often seen in highly scintillated terrestrial and maritime optical links. While the Naval Research Laboratory (NRL) and Optogration Inc, have recently demonstrated the performance of single period, InAlAs/InGaAs APD arrays as combined data reception and tracking sensors, an impact ionization engineered (I2E) epilayer design achieves even lower carrier ionization ratios by incorporating multiple multiplication periods engineered to suppress lower ionization rate carriers while enhancing the higher ionization rate carriers of interest. This work presents a three period I2E concentric, five element avalanche photodiode array rated for bandwidths beyond 1GHz with measured carrier ionization ratios of 0.05-0.1 at moderate APD gains. The epilayer design of the device will be discussed along with initial device characterization and high speed performance measurements.

  15. Design of a back-illuminated, crystallographically etched, silicon-on-sapphire avalanche photodiode with monolithically integrated microlens, for dual-mode passive & active imaging arrays

    NASA Astrophysics Data System (ADS)

    Stern, Alvin G.; Cole, Daniel C.

    2008-12-01

    There is a growing need in space and environmental research applications for dual-mode, passive and active 2D and 3D ladar imaging methods. To fill this need, an advanced back-illuminated avalanche photodiode (APD) design is presented based on crystallographically etched (100) epitaxial silicon on R-plane sapphire (SOS), enabling single photon sensitive, solid-state focal plane arrays (FPAs) with wide dynamic range, supporting passive and active imaging capability in a single FPA. When (100) silicon is properly etched with KOH:IPA:H2O solution through a thermally grown oxide mask, square based pyramidal frustum or mesa arrays result with the four mesa sidewalls of the APD formed by (111) silicon planes that intersect the (100) planes at a crystallographic angle, Φc = 54.7°. The APD device is fabricated in the mesa using conventional silicon processing technology. Detectors are back-illuminated through light focusing microlenses fabricated in the thinned, AR-coated sapphire substrate. The APDs share a common, front-side anode contact, made locally at the base of each device mesa. A low resistance (Al) or (Cu) metal anode grid fills the space between pixels and also inhibits optical cross-talk. SOS-APD arrays are indium bump-bonded to CMOS readout ICs to produce hybrid FPAs. The quantum efficiency for the square 27 µm pixels exceeds 50% for 250 nm < λ < 400 nm and exceeds 80% for 400 nm < λ < 700 nm. The sapphire microlenses compensate detector quantum efficiency loss resulting from the mesa geometry and yield 100% sensitive-area-fill-factor arrays, limited in size only by the wafer diameter.

  16. A hybrid WDM/OCDMA ring with a dynamic add/drop function based on Fourier code for local area networks.

    PubMed

    Choi, Yong-Kyu; Hosoya, Kenta; Lee, Chung Ghiu; Hanawa, Masanori; Park, Chang-Soo

    2011-03-28

    We propose and experimentally demonstrate a hybrid WDM/OCDMA ring with a dynamic add/drop function based on Fourier code for local area networks. Dynamic function is implemented by mechanically tuning the Fourier encoder/decoder for optical code division multiple access (OCDMA) encoding/decoding. Wavelength division multiplexing (WDM) is utilized for node assignment and 4-chip Fourier code recovers the matched signal from the codes. For an optical source well adapted to WDM channels and its short optical pulse generation, reflective semiconductor optical amplifiers (RSOAs) are used with a fiber Bragg grating (FBG) and gain-switched. To demonstrate we experimentally investigated a two-node hybrid WDM/OCDMA ring with a 4-chip Fourier encoder/decoder fabricated by cascading four FBGs with the bit error rate (BER) of <10(-9) for the node span of 10.64 km at 1.25 Gb/s. PMID:21451649

  17. Si/Ge photodiodes for coherent and analog communication

    NASA Astrophysics Data System (ADS)

    Piels, Molly

    High-speed photodiodes have diverse applications in wireless and fiber communications. They can be used as output stages for antenna systems as well as receivers for fiber optic networks. Silicon is an attractive substrate material for photonic components for a number of reasons. Low cost manufacturing in CMOS fabrication facilities, low material loss at telecommunications wavelengths, and relatively simple co-packaging with electronics are all driving interest in silicon photonic devices. Since silicon does not absorb light at telecommunications wavelengths, photodetector fabrication requires the integration of either III-V materials or germanium. Recent work on germanium photodetectors has focused on low-capacitance devices suitable for integration with silicon electronics. These devices have excellent bandwidth and efficiency, but have not been designed for the levels of photocurrent required by coherent and analog systems. This thesis explores the design, fabrication, and measurement of photodetectors fabricated on silicon with germanium absorbing regions for high speed and high power performance. There are numerous design trade-offs between speed, efficiency, and output power. Designing for high bandwidth favors small devices for low capacitance. Small devices require abrupt absorption profiles for good efficiency, but design for high output power favors large devices with dilute absorption. The absorption profile can be controlled by the absorber layer thickness, but this will also affect the bandwidth and power handling. This work quantifies the trade-offs between high speed, high efficiency, and high power design. Intrinsic region thickness and absorption profile are identified as the most important design variables. For PIN structures, the absorption profile and intrinsic region thickness are both functions of the Ge thickness, but in uni-traveling carrier (UTC) structures the absorption profile and intrinsic region can be designed independently. This

  18. Correcting for accidental correlations in saturated avalanche photodiodes.

    PubMed

    Grieve, J A; Chandrasekara, R; Tang, Z; Cheng, C; Ling, A

    2016-02-22

    In this paper we present a general method for estimating rates of accidental coincidence between a pair of single photon detectors operated within their saturation regimes. By folding the effects of recovery time of both detectors and the detection circuit into an "effective duty cycle" we are able to accomodate complex recovery behaviour at high event rates. As an example, we provide a detailed high-level model for the behaviour of passively quenched avalanche photodiodes, and demonstrate effective background subtraction at rates commonly associated with detector saturation. We show that by post-processing using the updated model, we observe an improvement in polarization correlation visibility from 88.7% to 96.9% in our experimental dataset. This technique will be useful in improving the signal-to-noise ratio in applications which depend on coincidence measurements, especially in situations where rapid changes in flux may cause detector saturation. PMID:26907016

  19. Responsivity of Diamond X-ray Photodiodes Calibrated at NSLS

    SciTech Connect

    Keister,J.W.; Smedley, J.; Muller, E. M.; Bohon, J.

    2009-09-27

    Single crystal, high purity synthetic diamond is used as photoabsorption and carrier transport medium in x-ray photodiodes. While the thermal / mechanical robustness and high x-ray transmission of diamond make such devices attractive for synchrotron instrumentation, state-of-the-art quality material and electrical interfaces further make such detectors feasible. The present work develops methodology for attaining calculable responsivity (photocurrent yield) over a wide range of photon energies (0.2 to 28 keV) to within 5% accuracy. These methods achieve linear response for up to 0.2 W absorbed x-ray power and response time as low as 1 ns. Details of contact formation / robustness and bias configuration are explored.

  20. Temperature Control of Avalanche Photodiode Using Thermoelectric Cooler

    NASA Technical Reports Server (NTRS)

    Refaat, Tamer F.; Luck, William S., Jr.; DeYoung, Russell J.

    1999-01-01

    Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrared optical detection applications. Although APDs are compact, rugged, and have an internal gain mechanism that is suitable for low light intensity; their responsivity, and therefore their output, is strongly dependent on the device temperature. Thermoelectric coolers (TEC) offers a suitable solution to this problem. A TEC is a solid state cooling device, which can be controlled by changing its current. TECs are compact and rugged, and they can precisely control the temperature to within 0.1 C with more than a 150 C temperature gradient between its surfaces. In this Memorandum, a proportional integral (PI) temperature controller for APDs using a TEC is discussed. The controller is compact and can successfully cool the APD to almost 0 C in an ambient temperature environment of up to 27 C.

  1. Colored adaptive compressed imaging with a single photodiode.

    PubMed

    Yan, Yiyun; Dai, Huidong; Liu, Xingjiong; He, Weiji; Chen, Qian; Gu, Guohua

    2016-05-10

    Computational ghost imaging is commonly used to reconstruct grayscale images. Currently, however, there is little research aimed at reconstructing color images. In this paper, we theoretically and experimentally demonstrate a colored adaptive compressed imaging method. Benefiting from imaging in YUV color space, the proposed method adequately exploits the sparsity of the U, V components in the wavelet domain, the interdependence between luminance and chrominance, and human visual characteristics. The simulation and experimental results show that our method greatly reduces the measurements required and offers better image quality compared to recovering the red (R), green (G), and blue (B) components separately in RGB color space. As the application of a single photodiode increases, our method shows great potential in many fields. PMID:27168280

  2. Studies of avalanche photodiodes for scintillating fibre tracking readout

    SciTech Connect

    Fenker, H; Thomas, J

    1993-01-01

    Avalanche Photodiodes (APDs) operating in ``Geiger Mode`` have been studied in a fibre tracking readout environment. A fast recharge circuit has been developed for high rate data taking, and results obtained from a model fibre tracker in the test beam at Brookhaven National Laboratory are presented. A high rate calibrated light source has been developed using a commercially available laser diode and has been used to measure the efficiency of the devices. The transmission of the light from a 1mm fibre onto a 0.5mm diameter APD surface has been identified as the main problem in the use of these particular devices for scintillating fibre tracking in the Superconducting Supercollider environment. Solutions to this problem are proposed.

  3. Perpendicular hot electron transport in the spin-valve photodiode

    NASA Astrophysics Data System (ADS)

    Huang, Biqin; Appelbaum, Ian

    2006-08-01

    The spin-valve photodiode is a ferromagnetic metal multilayer/n-type semiconductor Schottky device operated by photoexciting hot electrons in the metal and causing internal photoemission (IPE) into the semiconductor. Simple IPE theory predicts that the magnitude of the spin-valve effect (modulation of the photocurrent) should monotonically increase as a metallic capping layer thickness increases. Experimentally, however, we observe a nonmonotonic behavior with cap layer thickness, where the magnetocurrent reaches an optimum value and then decreases. The disagreement between this experimental result and the previous theoretical model is discussed, leading to an alternative interpretation of transport including reflection from the air-metal interface. Calculations with this model are consistent with the observed phenomena.

  4. Avalanche photodiode based time-of-flight mass spectrometry

    SciTech Connect

    Ogasawara, Keiichi Livi, Stefano A.; Desai, Mihir I.; Ebert, Robert W.; McComas, David J.; Walther, Brandon C.

    2015-08-15

    This study reports on the performance of Avalanche Photodiodes (APDs) as a timing detector for ion Time-of-Flight (TOF) mass spectroscopy. We found that the fast signal carrier speed in a reach-through type APD enables an extremely short timescale response with a mass or energy independent <2 ns rise time for <200 keV ions (1−40 AMU) under proper bias voltage operations. When combined with a microchannel plate to detect start electron signals from an ultra-thin carbon foil, the APD comprises a novel TOF system that successfully operates with a <0.8 ns intrinsic timing resolution even using commercial off-the-shelf constant-fraction discriminators. By replacing conventional total-energy detectors in the TOF-Energy system, APDs offer significant power and mass savings or an anti-coincidence background rejection capability in future space instrumentation.

  5. Detector telescope array: silicon--CsI(Tl)--photodiode

    NASA Astrophysics Data System (ADS)

    Norbeck, E.; Yang, L. B.; Pogodin, P.; Ingram, F. D.

    1999-10-01

    A closely packed array of 60 telescopes was developed for use at forward angles in the 4π Array at the National Superconducting Cyclotron Laboratory at Michigan State University. The telescopes resolve isotopes and cover nearly 100% of the solid angle assigned to the array. These requirements and limitations of space and funding resulted in a number of novel features, some of which will be useful in other applications. These features include: photodiodes of arbitrary shape with no frame around the edge, replacement of aluminized Mylar with aluminum leaf, an inexpensive silicon diode leakage current monitor that presents a graph of leakage current vs detector number, and a low noise but inexpensive preamplifier chip. Experience with the array showed that compounds in the outer insulation layer of some types of coax cable can seriously contaminate a vacuum system. The use of computer aided design and computer controlled machine tools reduced the cost of the structural parts by orders of magnitude.

  6. Innovative Detection System of Ochratoxin A by Thin Film Photodiodes

    PubMed Central

    Caputo, Domenico; de Cesare, Giampiero; Fanelli, Corrado; Nascetti, Augusto; Ricelli, Alessandra; Scipinotti, Riccardo

    2007-01-01

    In this work we present, for the first time, a rapid, compact and innovative method for detection of Ochratoxin A (OTA) based on hydrogenated amorphous silicon (a-Si:H) sensors. 2 μl of acidified toluene containing OTA at different concentrations were spotted on the silica side of a High Performance Thin Layer Cromatography plate and aligned with a a-Si:H p-i-n photodiode deposited by Plasma Enhanced Chemical Vapor Deposition on a different glass substrate. As an UV radiation excites the mycotoxin, the re-emitted light is detected by the a-Si:H sensor. Results show a very good linearity between OTA concentration and the sensor photocurrent over almost three orders of magnitude. The minimum detected OTA concentration is equal to 0.1ng, showing that the presented system has the potential for a low cost system suitable for the early detection of toxins in foods.

  7. CLASSICAL AREAS OF PHENOMENOLOGY: Below-diffract ion-limited hybrid recording using silicon thin film super-resolution structure

    NASA Astrophysics Data System (ADS)

    Jiao, Xin-Bing; Wei, Jing-Song; Gan, Fu-Xi

    2009-12-01

    We report on new experimental results for below-diffraction-limited hybrid recording. In our experiments, by means of focused laser assisted magnetic recording, the magnetic domains within TbFeCo thin films are obtained under an external perpendicular direct magnetic field. For a single magnetic medium, the domain size is mainly determined by the focused spot, which is about 620 nm for the laser wavelength λ = 406 nm, and a numerical aperture of the lens of 0.80. However, when a silicon thin film structure is inserted between the substrate and the magnetic medium, the recording domains can be reduced obviously. By optimizing the experimental condition, even the size can be reduced to about 100 nm, which is below the diffraction limit, i.e. about 1/6 of the spot size. This is very useful for improving the hybrid recording density in practical applications.

  8. Performance limitations of InGaAs photodiodes

    NASA Astrophysics Data System (ADS)

    Rogalski, Antoni

    1999-04-01

    The carrier lifetimes in InxGa1-xAs (InGaAs) ternary alloys for radiative and Auger recombination are calculated for temperature 300 K in the short wavelength range 1.5 < (lambda) < 3.7 micrometers . Due to photon recycling, an order of magnitude enhancements in the radiative lifetimes over those obtained from the standard van Roosbroeck and Shockley expression, has been assumed. The possible Auger recombination mechanisms (CHCC, CHLH and CHSH processes) in direct-gap semiconductors are investigated. In n-type and p-type materials the carrier lifetimes are similar. It is clearly shown that in the range of low doping concentration, the carrier lifetime is determined by radiative recombination. For n-type material in the range of higher doping level, a competition between radiative and CHCC processes take place; instead for p-type materials the most effective channel of Auger mechanisms is the CHSH process. A special attention has been put on discussion of the carrier lifetimes in both types of In0.53Ga0.47As materials. Consequence of enhancement in the radiative lifetime leads to higher ultimate performance of photodiodes. The performance (RoA product) of heterostructure InGaAs photovoltaic devices are analyzed. Both the n-on-p (with p-type active region) as well as p-on- n (with n-type active region) are considered. Finally, theoretically predicted performance of InGaAs photodiodes are compared with experimental data reported by other authors.

  9. The quantum efficiency of HgCdTe photodiodes in relation to the direction of illumination and to their geometry

    NASA Technical Reports Server (NTRS)

    Rosenfeld, D.; Bahir, G.

    1993-01-01

    A theoretical study of the effect of the direction of the incident light on the quantum efficiency of homogeneous HgCdTe photodiodes suitable for sensing infrared radiation in the 8-12 microns atmospheric window is presented. The probability of an excess minority carrier to reach the junction is derived as a function of its distance from the edge of the depletion region. Accordingly, the quantum efficiency of photodiodes is presented for two geometries. In the first, the light is introduced directly to the area in which it is absorbed (opaque region), while in the second, the light passes through a transparent region before it reaches the opaque region. Finally, the performance of the two types of diodes is analyzed with the objective of finding the optimal width of the absorption area. The quantum efficiency depends strongly on the way in which the light is introduced. The structure in which the radiation is absorbed following its crossing the transparent region is associated with both higher quantum efficiency and homogeneity. In addition, for absorption region widths higher than a certain minimum, the quantum efficiency in this case is insensitive to the width of the absorption region.

  10. Remobilization of granitoid rocks through mafic recharge: evidence from basalt-trachyte mingling and hybridization in the Manori-Gorai area, Mumbai, Deccan Traps

    NASA Astrophysics Data System (ADS)

    Zellmer, Georg F.; Sheth, Hetu C.; Iizuka, Yoshiyuki; Lai, Yi-Jen

    2012-01-01

    Products of contrasting mingled magmas are widespread in volcanoes and intrusions. Subvolcanic trachyte intrusions hosting mafic enclaves crop out in the Manori-Gorai area of Mumbai in the Deccan Traps. The petrogenetic processes that produced these rocks are investigated here with field data, petrography, mineral chemistry, and whole rock major, trace, and Pb isotope chemistry. Local hybridization has occurred and has produced intermediate rocks such as a trachyandesitic dyke. Feldspar crystals have complex textures and an unusually wide range in chemical composition. Crystals from the trachytes cover the alkali feldspar compositional range and include plagioclase crystals with anorthite contents up to An47. Crystals from the mafic enclaves are dominated by plagioclase An72-90, but contain inclusions of orthoclase and other feldspars covering the entire compositional range sampled in the trachytes. Feldspars from the hybridized trachyandesitic dyke yield mineral compositions of An80-86, An47-54, Ab94-99, Or45-60, and Or96-98, all sampled within individual phenocrysts. We show that these compositional features are consistent with partial melting of granitoid rocks by influx of mafic magmas, followed by magma mixing and hybridization of the partial melts with the mafic melts, which broadly explains the observed bulk rock major and trace element variations. However, heterogeneities in Pb isotopic compositions of trachytes are observed on the scale of individual outcrops, likely reflecting initial variations in the isotopic compositions of the involved source rocks. The combined data point to one or more shallow-level trachytic magma chambers disturbed by multiple injections of trachytic, porphyritic alkali basaltic, and variably hybridized magmas.

  11. High performance x-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Kumar, Abhishek; Moet, Date; van der Steen, Jan Laurens; van Breemen, Albert; Shanmugam, Santhosh; Gilot, Jan; Andriessen, Ronn; Simon, Matthias; Ruetten, Walter; Douglas, Alexander; Raaijmakers, Rob; Malinowski, Pawel E.; Myny, Kris; Gelinck, Gerwin

    2015-10-01

    High performance X-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current Abhishek Kumara, Date Moeta, Albert van Breemena, Santhosh Shanmugama, Jan-Laurens van der Steena, Jan Gilota, Ronn Andriessena, Matthias Simonb, Walter Ruettenb, Alexander U. Douglasb, Rob Raaijmakersc, Pawel E. Malinowskid, Kris Mynyd and Gerwin H. Gelincka,e a. Holst Centre/TNO, High Tech Campus 31, Eindhoven 5656 AE, The Netherlands b. Philips Research, High Tech Campus 34, 5656 AE Eindhoven, The Netherlands c. Philips Healthcare, Veenpluis 6-8, 5684 PC Best, The Netherlands d. Department of Large Area Electronics, imec vzw, Kapeldreef 75, Leuven B3001, Belgium e. Applied Physics Department, TU Eindhoven, Eindhoven, The Netherlands We demonstrate high performance X-ray imaging detectors on foil suitable for medical grade X-ray imaging applications. The detectors are based on solution-processed organic photodiodes forming bulk-heterojunctions from photovoltaic donor and acceptor blend. The organic photodiodes are deposited using an industrially compatible slot die coating technique with end of line processing temperature below 100°C. These photodiodes have extremely low dark leakage current density of 10-7 mA/cm2 at -2V bias with very high yield and have peak absorption around 550 nm wavelength. We combine these organic photodiodes with high mobility metal oxide semiconductor based thin film transistor arrays with high pixel resolution of 200ppi on thin plastic substrate. When combined with a typical CsI(TI) scintillator material on top, they are well suited for low dose X-ray imaging applications. The optical crosstalk is insignificant upto resolution of 200 ppi despite the fact that the photodiode layer is one continuous layer and is non-pixelated. Low processing temperatures are another key advantage since they can be fabricated on plastic substrate. This implies that we can make X-ray detectors on flexible foil. Those

  12. Demonstration of highly reliable nonhermetic planar InGaAs/InP photodiodes

    NASA Astrophysics Data System (ADS)

    Osenbach, John W.; Evanosky, T. L.; Phatak, Suniel B.; Comizzoli, Robert B.; Chand, Naresh

    1996-01-01

    Reliable non-hermetic photodiodes are expected to reduce the cost of optoelectronics used in fiber to the home and cable TV system. However, all reports to date indicate non-hermetic InGaAs/InP photodiodes do not have sufficient reliability for use in the systems. In this paper, we report the first data that conclusively shows, properly designed and manufactured non- hermetic InGaAs/InP photodiodes can be made with reliability sufficient to use in telecommunication systems. We have produced non-hermetic photodiodes whose hazard rate at 15 years of field use at 45 degrees Celsius and 50% RH is less than 100 FITs, the requirement for telecommunication systems.

  13. Large Area Nano-transfer Printing of Sub-50-nm Metal Nanostructures Using Low-cost Semi-flexible Hybrid Templates.

    PubMed

    Nagel, Robin D; Haeberle, Tobias; Schmidt, Morten; Lugli, Paolo; Scarpa, Giuseppe

    2016-12-01

    In this work, we present a method for printing metal micro- and nanopatterns down to sub-50-nm feature sizes using replicated, defect-tolerant stamps made out of OrmoStamp®; material. The relevant parameters for a successful transfer over large areas were investigated and yields above 99 % have been achieved. Comparing our results to conventional nano-transfer printing using PDMS stamps, we find that the more rigid hybrid polymer used here prevents unintended transfer from interspaces between structures of large distance due to roof collapse and deformation of nano-sized structures due to lateral collapse. Yet, our stamps are flexible enough to ensure intimate contact with the underlying substrate over large areas even in the presence of defect particles. Additionally, the presented patterning technique is resist-, solvent-, and chemical-free and is therefore ideally suited for applications in organic nanoelectronics where standard nanostructuring methods can harm or destroy the organic material. PMID:26976429

  14. High quality MgB2 thick films and large-area films fabricated by hybrid physical chemical vapor deposition with a pocket heater

    NASA Astrophysics Data System (ADS)

    Wang, S. F.; Chen, Ke; Lee, C.-H.; Soukiassian, A.; Lamborn, D. R.; DeFrain, R.; Redwing, J. M.; Li, Qi; Schlom, D. G.; Xi, X. X.

    2008-08-01

    A hybrid physical-chemical vapor deposition process using a pocket heater was developed for the growth of high quality epitaxial large-area MgB2 thin films and c-axis textured MgB2 thick films. This technique is able to independently control the substrate and Mg source temperatures and maintain sufficient Mg overpressure to ensure phase stability. The two-inch large-area MgB2 thin films showed uniform superconducting properties with the superconducting transition temperature Tc of about 40 K, residual resistivity ratio (RRR) of about 10, and critical current density Jc of about 107 A cm-2 (0 T, 5 K). The thick films (~10 µm) on sapphire substrates showed a maximum Tc of 40 K and RRR of 15, and a Jc of 1.6 × 106 A cm-2 at low applied magnetic fields even at 20 K. High quality thick films also have been obtained on metal substrates.

  15. Large Area Nano-transfer Printing of Sub-50-nm Metal Nanostructures Using Low-cost Semi-flexible Hybrid Templates

    NASA Astrophysics Data System (ADS)

    Nagel, Robin D.; Haeberle, Tobias; Schmidt, Morten; Lugli, Paolo; Scarpa, Giuseppe

    2016-03-01

    In this work, we present a method for printing metal micro- and nanopatterns down to sub-50-nm feature sizes using replicated, defect-tolerant stamps made out of OrmoStamp®; material. The relevant parameters for a successful transfer over large areas were investigated and yields above 99 % have been achieved. Comparing our results to conventional nano-transfer printing using PDMS stamps, we find that the more rigid hybrid polymer used here prevents unintended transfer from interspaces between structures of large distance due to roof collapse and deformation of nano-sized structures due to lateral collapse. Yet, our stamps are flexible enough to ensure intimate contact with the underlying substrate over large areas even in the presence of defect particles. Additionally, the presented patterning technique is resist-, solvent-, and chemical-free and is therefore ideally suited for applications in organic nanoelectronics where standard nanostructuring methods can harm or destroy the organic material.

  16. Hybridization of a sigma-delta-based CMOS hybrid detector

    NASA Astrophysics Data System (ADS)

    Kolb, K. E.; Stoffel, N. C.; Douglas, B.; Maloney, C. W.; Raisanen, A. D.; Ashe, B.; Figer, D. F.; Tamagawa, T.; Halpern, B.; Ignjatovic, Zeljko

    2010-07-01

    The Rochester Imaging Detector Laboratory, University of Rochester, Infotonics Technology Center, and Jet Process Corporation developed a hybrid silicon detector with an on-chip sigma-delta (ΣΔ) ADC. This paper describes the process and reports the results of developing a fabrication process to robustly produce high-quality bump bonds to hybridize a back-illuminated detector with its ΣΔ ADC. The design utilizes aluminum pads on both the readout circuit and the photodiode array with interconnecting indium bumps between them. The development of the bump bonding process is discussed, including specific material choices, interim process structures, and final functionality. Results include measurements of bond integrity, cross-wafer uniformity of indium bumps, and effects of process parameters on the final product. Future plans for improving the bump bonding process are summarized.

  17. Application of a photodiode-array optical turbulence sensor to wind studies in complex terrain

    SciTech Connect

    Porch, W.M.; Green, T.J.

    1980-04-01

    A digital photodiode-array optical turbulence sensor was used to gather data simultaneously with analog optical anemometer measurements during the July 1979 ASCOT experiment. This system provided useful information regarding the uniformity of optical turbulence used by the optical anemometer to derive cross-path wind speeds. Wind speeds derived from digital analysis of the photodiode-array intensities also provided an independent measure of the cross-path wind speed. Close agreement was found between these two measures of the wind.

  18. Epitaxial HgCdTe/CdTe Photodiodes For The 1 -3 μm Spectral Region

    NASA Astrophysics Data System (ADS)

    Shin, S. H.; Pasko, J. G.; Cheung, D. T.

    1981-07-01

    Hgi-xCdxTe epitaxial layers have been successfully grown in various compositions, for 1-3 μm applications. n+/p junctions are formed either by a standard B-implantation into as-grown p-type layers or by doubly grown p- and n-layers. The SWIR HgCdTe photodiodes exhibit quantum efficiencies of 55-65% without AR coating. For the diodes with 1.39 μm cut-off at room temperature, the zero bias detector resistance-area (RoA) product is 4 x 10 4 Ω-cm2, and the dark current density is ~ 1 x 10 -4 A/cm2 at half-breakdown voltage. The same values of ~ 104 Ω-cm2 RoA products have also been measured for 2.4 μm cut-off photodiodes at 195K. The energy gap and temperature dependence of RoA product is in excellent agreement with the bulk limited generation-recombination model. The breakdown voltages of SWIR diodes vary from 12 volts to greater than 130 volts, depending on the Cd composition (x) and base carrier concentrations.

  19. Soft X-ray detection and photon counting spectroscopy with commercial 4H-SiC Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Gohil, T.; Lioliou, G.; Barnett, A. M.

    2016-09-01

    The results of electrical characterisation and X-ray detection measurements of two different active area (0.06 mm2 and 0.5 mm2) commercial 4H-SiC Schottky photodiodes at room temperature are reported. The devices exhibited low dark currents (less than 10 pA) even at a high electric field strengths (403 kV/cm for 0.06 mm2 diodes; 227 kV/cm for 0.5 mm2 diodes). The results of the X-ray measurements indicate that the diodes can be used as photon counting spectroscopic X-ray detectors with modest energy resolutions: FWHM at 5.9 keV of 1.8 keV and 3.3 keV, for the 0.06 mm2 and 0.5 mm2 devices, respectively. Noise analysis of the photodiodes coupled to a custom low noise charge sensitive preamplifier is also presented.

  20. Nano-Multiplication-Region Avalanche Photodiodes and Arrays

    NASA Technical Reports Server (NTRS)

    Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

    2008-01-01

    Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be

  1. Readout circuitry for continuous high-rate photon detection with arrays of InP Geiger-mode avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Frechette, Jonathan; Grossmann, Peter J.; Busacker, David E.; Jordy, George J.; Duerr, Erik K.; McIntosh, K. Alexander; Oakley, Douglas C.; Bailey, Robert J.; Ruff, Albert C.; Brattain, Michael A.; Funk, Joseph E.; MacDonald, Jason G.; Verghese, Simon

    2012-06-01

    An asynchronous readout integrated circuit (ROIC) has been developed for hybridization to a 32x32 array of single-photon sensitive avalanche photodiodes (APDs). The asynchronous ROIC is capable of simultaneous detection and readout of photon times of arrival, with no array blind time. Each pixel in the array is independently operated by a finite state machine that actively quenches an APD upon a photon detection event, and re-biases the device into Geiger mode after a programmable hold-off time. While an individual APD is in hold-off mode, other elements in the array are biased and available to detect photons. This approach enables high pixel refresh frequency (PRF), making the device suitable for applications including optical communications and frequency-agile ladar. A built-in electronic shutter that de-biases the whole array allows the detector to operate in a gated mode or allows for detection to be temporarily disabled. On-chip data reduction reduces the high bandwidth requirements of simultaneous detection and readout. Additional features include programmable single-pixel disable, region of interest processing, and programmable output data rates. State-based on-chip clock gating reduces overall power draw. ROIC operation has been demonstrated with hybridized InP APDs sensitive to 1.06-μm and 1.55-μm wavelength, and fully packaged focal plane arrays (FPAs) have been assembled and characterized.

  2. Design of HgCdTe heterojunction photodiodes on Si substrate

    NASA Astrophysics Data System (ADS)

    Zhang, P.; Ye, Z. H.; Chen, Y. Y.; Lin, C.; Hu, X. N.; Ding, R. J.; He, L.

    2014-05-01

    An innovative heterojunction photodiode structure in HgCdTe-on-Si long-wavelength (LW) infrared focal plane array (IRFPA) detector is investigated in this paper. The quantum efficiency and the photoresponse of devices have been numerically simulated, using Crosslight Technology Computer Aided Design (TCAD) software. Simulation results indicate that in contrast to the p+-on-n homojunction photodiode, the heterojunction photodiode effectively suppresses the crosstalk between adjacent pixels and interface recombination between HgCdTe active region and buffer layer on Si substrate. And in the range of the LW-band, the quantum efficiency of the heterojunction photodiode increases by 35.5%. Furthermore, the heterojunction photodiode acquires the narrow-band response spectrum desired in the application of the LW IRFPA detectors as the p+-on-n homojunction photodiode with the optical filter. Finally, the smaller bulk resistance of its heavily doped N-type layer ensures the uniformity of the pixel series resistance in the large format IRFPAs.

  3. Measurement of Radiation - Light Field Congruence using a Photodiode Array

    NASA Astrophysics Data System (ADS)

    Balderson, Michael J.

    Improved treatment techniques in radiation therapy provide incentive to reduce treatment margins, thereby increasing the necessity for more accurate geometrical setup of the linear accelerator and accompanying components. In this thesis, we describe the development of a novel device that enables precise and automated measurement of radiation-light field congruence of medical linear accelerators for the purpose of improving setup accuracy, and standardizing repeated quality control activities. The device consists of a silicon photodiode array, an evaluation board, a data acquisition card, and a laptop. Using the device, we show that the radiation-light field congruence for both 6 and 15 MV beams is within 2 mm on a Varian Clinac 21 EX medical linear accelerator. Because measurements are automated, ambiguities resulting from observer variability are removed, greatly improving the reproducibility of measurements over time and across observers. We expect the device to be useful in providing consistent measurements on linear accelerators used for stereotactic radiosurgery, during the commissioning of new linear accelerators, and as an alternative to film or other commercially available devices for performing monthly or annual quality control checks.

  4. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    SciTech Connect

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-05-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from {sup 235}U and {sup 238}U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup.

  5. Nanostructured organic inorganic photodiodes with high rectification ratio

    NASA Astrophysics Data System (ADS)

    Karan, Santanu; Mallik, Biswanath

    2008-12-01

    High quality organic-inorganic heterojunction photodiodes based on nanostructured copper (II) phthalocyanine (CuPc) and intrinsic zinc oxide (i-ZnO) have been fabricated. The i-ZnO thin films/layers were grown by RF magnetron sputtering on clean indium tin oxide (ITO) coated glass substrates. These films have been characterized by optical absorption and field emission scanning electron microscopy (FESEM). CuPc thin films deposited at room temperature on i-ZnO have exhibited a change in their surface morphology with the post-deposition annealing temperature under normal atmosphere. The electrical dark conductivity and the photoconductivity of ITO/i-ZnO/CuPc/Au sandwich structures have been measured under various photoexcitation intensities using a xenon light source. The devices have shown excellent reproducibility of their electrical characteristics and high rectification ratios. The highest rectification ratio is nearly 831 calculated above the threshold voltage at room temperature for the sample annealed at 250 °C (i.e. Pc 250). The effects of the annealing temperature of CuPc on the surface morphology, rectification ratio, and optical properties have been discussed.

  6. Characterization of Advanced Avalanche Photodiodes for Water Vapor Lidar Receivers

    NASA Technical Reports Server (NTRS)

    Refaat, Tamer F.; Halama, Gary E.; DeYoung, Russell J.

    2000-01-01

    Development of advanced differential absorption lidar (DIAL) receivers is very important to increase the accuracy of atmospheric water vapor measurements. A major component of such receivers is the optical detector. In the near-infrared wavelength range avalanche photodiodes (APD's) are the best choice for higher signal-to-noise ratio, where there are many water vapor absorption lines. In this study, characterization experiments were performed to evaluate a group of silicon-based APD's. The APD's have different structures representative of different manufacturers. The experiments include setups to calibrate these devices, as well as characterization of the effects of voltage bias and temperature on the responsivity, surface scans, noise measurements, and frequency response measurements. For each experiment, the setup, procedure, data analysis, and results are given and discussed. This research was done to choose a suitable APD detector for the development of an advanced atmospheric water vapor differential absorption lidar detection system operating either at 720, 820, or 940 nm. The results point out the benefits of using the super low ionization ratio (SLIK) structure APD for its lower noise-equivalent power, which was found to be on the order of 2 to 4 fW/Hz(sup (1/2)), with an appropriate optical system and electronics. The water vapor detection systems signal-to-noise ratio will increase by a factor of 10.

  7. Avalanche photodiode photon counting receivers for space-borne lidars

    NASA Technical Reports Server (NTRS)

    Sun, Xiaoli; Davidson, Frederic M.

    1991-01-01

    Avalanche photodiodes (APD) are studied for uses as photon counting detectors in spaceborne lidars. Non-breakdown APD photon counters, in which the APD's are biased below the breakdown point, are shown to outperform: (1) conventional APD photon counters biased above the breakdown point; (2) conventional APD photon counters biased above the breakdown point; and (3) APD's in analog mode when the received optical signal is extremely weak. Non-breakdown APD photon counters were shown experimentally to achieve an effective photon counting quantum efficiency of 5.0 percent at lambda = 820 nm with a dead time of 15 ns and a dark count rate of 7000/s which agreed with the theoretically predicted values. The interarrival times of the counts followed an exponential distribution and the counting statistics appeared to follow a Poisson distribution with no after pulsing. It is predicted that the effective photon counting quantum efficiency can be improved to 18.7 percent at lambda = 820 nm and 1.46 percent at lambda = 1060 nm with a dead time of a few nanoseconds by using more advanced commercially available electronic components.

  8. Development of high gain avalanche photodiodes for UV imaging applications

    NASA Astrophysics Data System (ADS)

    Sood, Ashok K.; Zeller, John W.; Welser, Roger E.; Puri, Yash R.; Dupuis, Russell D.; Ji, Mi-Hee; Kim, Jeomoh; Detchprohm, Theeradetch; Dhar, Nibir K.; Lewis, Jay S.; Peters, Roy L.

    2015-08-01

    High-resolution imaging in ultraviolet (UV) bands has many applications in defense and commercial systems. The shortest wavelength is desired for increased spatial resolution, which allows for small pixels and large formats. The next frontier is to develop UV avalanche photodiode (UV-APD) arrays with high gain to demonstrate high-resolution imaging. We compare performance characteristics of front-illuminated Al0.05Ga0.95N UV-APDs grown on a free-standing (FS) GaN substrate and a GaN/sapphire template. UV-APDs grown on a FS-GaN substrate show lower dark current densities for all fabricated mesa sizes than similar UV-APDs grown on a GaN/sapphire template. In addition, stable avalanche gain higher than 5×105 and a significant increase in the responsivity of UV-APDs grown on a FS-GaN substrate are observed as a result of avalanche multiplication at high reverse bias. We believe that the high crystalline quality of Al0.05Ga0.95N UVAPDs grown on a FS-GaN substrate with low dislocation density is responsible for the observed improvement of low leakage currents, high performance photodetector characteristics, and reliability of the devices.

  9. Nanostructured organic-inorganic photodiodes with high rectification ratio.

    PubMed

    Karan, Santanu; Mallik, Biswanath

    2008-12-10

    High quality organic-inorganic heterojunction photodiodes based on nanostructured copper (II) phthalocyanine (CuPc) and intrinsic zinc oxide (i-ZnO) have been fabricated. The i-ZnO thin films/layers were grown by RF magnetron sputtering on clean indium tin oxide (ITO) coated glass substrates. These films have been characterized by optical absorption and field emission scanning electron microscopy (FESEM). CuPc thin films deposited at room temperature on i-ZnO have exhibited a change in their surface morphology with the post-deposition annealing temperature under normal atmosphere. The electrical dark conductivity and the photoconductivity of ITO/i-ZnO/CuPc/Au sandwich structures have been measured under various photoexcitation intensities using a xenon light source. The devices have shown excellent reproducibility of their electrical characteristics and high rectification ratios. The highest rectification ratio is nearly 831 calculated above the threshold voltage at room temperature for the sample annealed at 250 °C (i.e. Pc 250). The effects of the annealing temperature of CuPc on the surface morphology, rectification ratio, and optical properties have been discussed. PMID:21730664

  10. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    NASA Technical Reports Server (NTRS)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  11. Characterization of midwave infrared InSb avalanche photodiode

    SciTech Connect

    Abautret, J. Evirgen, A.; Perez, J. P.; Christol, P.; Rothman, J.; Cordat, A.

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  12. High current density and longtime stable field electron transfer from large-area densely arrayed graphene nanosheet-carbon nanotube hybrids.

    PubMed

    Deng, Jian-Hua; Cheng, Lin; Wang, Fan-Jie; Li, Guo-Zheng; Li, De-Jun; Cheng, Guo-An

    2014-12-10

    Achieving high current and longtime stable field emission from large area (larger than 1 mm(2)), densely arrayed emitters is of great importance in applications for vacuum electron sources. We report here the preparation of graphene nanosheet-carbon nanotube (GNS-CNT) hybrids by following a process of iron ion prebombardment on Si wafers, catalyst-free growth of GNSs on CNTs, and high-temperature annealing. Structural observations indicate that the iron ion prebombardment influences the growth of CNTs quite limitedly, and the self-assembled GNSs sparsely distributed on the tips of CNTs with their sharp edges unfolded outside. The field emission study indicates that the maximum emission current density (Jmax) is gradually promoted after these treatments, and the composition with GNSs is helpful for decreasing the operation fields of CNTs. An optimal Jmax up to 85.10 mA/cm(2) is achieved from a 4.65 mm(2) GNS-CNT sample, far larger than 7.41 mA/cm(2) for the as-grown CNTs. This great increase of Jmax is ascribed to the reinforced adhesion of GNS-CNT hybrids to substrates. We propose a rough calculation and find that this adhesion is promoted by 7.37 times after the three-step processing. We consider that both the ion prebombardment produced rough surface and the wrapping of CNT foot by catalyst residuals during thermal processing are responsible for this enhanced adhesion. Furthermore, the three-step prepared GNS-CNT hybrids present excellent field emission stability at high emission current densities (larger than 20 mA/cm(2)) after being perfectly aged. PMID:25335851

  13. Enhanced Red and Near Infrared Detection in Flow Cytometry Using Avalanche Photodiodes

    PubMed Central

    Lawrence, William G.; Varadi, Gyula; Entine, Gerald; Podniesinski, Edward; Wallace, Paul K.

    2008-01-01

    Background Polychromatic flow cytometry enables detailed identification of cell phenotype using multiple fluorescent parameters. The photomultiplier tubes used to detect fluorescence in current instruments limit the sensitivity in the long wavelength spectral range. We demonstrate the flow cytometric applications of silicon avalanche photodiodes, which have improved red sensitivity and a working fluorescence detection range beyond 1000 nm. Methods A comparison of the wavelength dependent performance of the avalanche photodiode and photomultiplier tube was carried out using pulsed light emitting diode sources, calibrated test beads and biological samples. A breadboard flow cytometer test bench was constructed to compare the performance of photomultiplier tubes and avalanche photodiode detectors. The avalanche photodiode used an additional amplifier stage to match the internal gain of the photomultiplier tube. Results The resolution of the avalanche photodiode and photomultiplier tube was compared for flow cytometry applications using a pulsed light emitting diode source over the 500 nm to 1060 nm spectral range. These measurements showed the relative changes in the signal to noise performance of the APD and PMT over a broad spectral range. Both the avalanche photodiode and photomultiplier tubes were used to measure the signal to noise response for a set of 6 peak calibration beads over the 530 to 800 nm wavelength range. CD4 positive cells labeled with antibody conjugated phycoerythrin or 800 nm quantum dots were identified by simultaneous detection using the avalanche photodiode and the photomultiplier tube. The ratios of the intensities of the CD4− and CD4+ populations were found to be similar for both detectors in the visible wavelengths, but only the avalanche photodiode was able to separate these populations at wavelengths above 800 nm. Conclusions These measurements illustrate the differences in APD and PMT performance at different wavelengths and signal

  14. Organic Photodiodes: The Future of Full Color Detection and Image Sensing.

    PubMed

    Jansen-van Vuuren, Ross D; Armin, Ardalan; Pandey, Ajay K; Burn, Paul L; Meredith, Paul

    2016-06-01

    Major growth in the image sensor market is largely as a result of the expansion of digital imaging into cameras, whether stand-alone or integrated within smart cellular phones or automotive vehicles. Applications in biomedicine, education, environmental monitoring, optical communications, pharmaceutics and machine vision are also driving the development of imaging technologies. Organic photodiodes (OPDs) are now being investigated for existing imaging technologies, as their properties make them interesting candidates for these applications. OPDs offer cheaper processing methods, devices that are light, flexible and compatible with large (or small) areas, and the ability to tune the photophysical and optoelectronic properties - both at a material and device level. Although the concept of OPDs has been around for some time, it is only relatively recently that significant progress has been made, with their performance now reaching the point that they are beginning to rival their inorganic counterparts in a number of performance criteria including the linear dynamic range, detectivity, and color selectivity. This review covers the progress made in the OPD field, describing their development as well as the challenges and opportunities. PMID:27111541

  15. Compact low-noise preamplifier for noise spectroscopy with biased photodiodes in cargo inspection systems

    NASA Astrophysics Data System (ADS)

    Benetti, Bob; Langeveld, Willem G. J.

    2013-09-01

    Noise Spectroscopy, a.k.a. Z-determination by Statistical Count-rate ANalysis (Z-SCAN), is a statistical technique to determine a quantity called the "noise figure" from digitized waveforms of pulses of transmitted x-rays in cargo inspection systems. Depending only on quantities related to the x-ray energies, it measures a characteristic of the transmitted x-ray spectrum, which depends on the atomic number, Z, of the material penetrated. The noise figure can thus be used for material separation. In an 80-detector prototype, scintillators are used with large-area photodiodes biased at 80V and digitized using 50-MSPS 12-bit ADC boards. We present an ultra-compact low-noise preamplifier design, with one high-gain and one low-gain channel per detector for improved dynamic range. To achieve adequate detection sensitivity and spatial resolution each dual-gain preamplifier channel must fit within a 12.7 mm wide circuit board footprint and maintain adequate noise immunity to conducted and radiated interference from adjacent channels. The novel design included iterative SPICE analysis of transient response, dynamic range, frequency response, and noise analysis to optimize the selection and configuration of amplifiers and filter response. We discuss low-noise active and passive components and low-noise techniques for circuit board layout that are essential to achieving the design goals, and how the completed circuit board performed in comparison to the predicted responses.

  16. Current-mode CMOS hybrid image sensor

    NASA Astrophysics Data System (ADS)

    Benyhesan, Mohammad Kassim

    Digital imaging is growing rapidly making Complimentary Metal-Oxide-Semi conductor (CMOS) image sensor-based cameras indispensable in many modern life devices like cell phones, surveillance devices, personal computers, and tablets. For various purposes wireless portable image systems are widely deployed in many indoor and outdoor places such as hospitals, urban areas, streets, highways, forests, mountains, and towers. However, the increased demand on high-resolution image sensors and improved processing features is expected to increase the power consumption of the CMOS sensor-based camera systems. Increased power consumption translates into a reduced battery life-time. The increased power consumption might not be a problem if there is access to a nearby charging station. On the other hand, the problem arises if the image sensor is located in widely spread areas, unfavorable to human intervention, and difficult to reach. Given the limitation of energy sources available for wireless CMOS image sensor, an energy harvesting technique presents a viable solution to extend the sensor life-time. Energy can be harvested from the sun light or the artificial light surrounding the sensor itself. In this thesis, we propose a current-mode CMOS hybrid image sensor capable of energy harvesting and image capture. The proposed sensor is based on a hybrid pixel that can be programmed to perform the task of an image sensor and the task of a solar cell to harvest energy. The basic idea is to design a pixel that can be configured to exploit its internal photodiode to perform two functions: image sensing and energy harvesting. As a proof of concept a 40 x 40 array of hybrid pixels has been designed and fabricated in a standard 0.5 microm CMOS process. Measurement results show that up to 39 microW of power can be harvested from the array under 130 Klux condition with an energy efficiency of 220 nJ /pixel /frame. The proposed image sensor is a current-mode image sensor which has several

  17. RDA Requirements For Optimum Hybrid Focal Plane Performance

    NASA Astrophysics Data System (ADS)

    Grossman, S. B.; Emmons, R. B.; Hawkins, S. R.

    1982-06-01

    In analyzing the performance of direct-injected hybrid focal plane arrays, many factors must be consiaered in determining the minimum detector resistance-area product RDA neces-sary to obtain background-limited performance (BLIP) and good array uniformity. In photo-aioue arrays, a necessary but not sufficient condition is that noise due to the diode generation-recombination and diffusion currents are less than the background photon shot noise. Tnis places a minimum requirement on the magnitude of RoA, the zero bias resistance area product. In addition, there are generally much more stringent requirements on RDA uue to input MOSFET l/f noise and threshold variations which exceed the single detector RoA requirement for BLIP operation at a given background. In general, the input thresnolu variations require that the photodiodes be somewhat back-biased. This produces a substantially higner average RDA at the expense of higher detector l/f noise due to surface leakage. In tnis study we have investigated the detector impedance requirements in terms of tne injection efficiency, threshold nonuniformities, the input MOSFET excess (l/f) noise, and tne detector excess noise. For state-of-the-art parameters, it was determined tnat tne input MOSFET l/f noise always dominates the other elements in determining the required detector impeaance:k

  18. Advanced active quenching circuits for single-photon avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Stipčević, M.; Christensen, B. G.; Kwiat, P. G.; Gauthier, D. J.

    2016-05-01

    Commercial photon-counting modules, often based on actively quenched solid-state avalanche photodiode sensors, are used in wide variety of applications. Manufacturers characterize their detectors by specifying a small set of parameters, such as detection efficiency, dead time, dark counts rate, afterpulsing probability and single photon arrival time resolution (jitter), however they usually do not specify the conditions under which these parameters are constant or present a sufficient description. In this work, we present an in-depth analysis of the active quenching process and identify intrinsic limitations and engineering challenges. Based on that, we investigate the range of validity of the typical parameters used by two commercial detectors. We identify an additional set of imperfections that must be specified in order to sufficiently characterize the behavior of single-photon counting detectors in realistic applications. The additional imperfections include rate-dependence of the dead time, jitter, detection delay shift, and "twilighting." Also, the temporal distribution of afterpulsing and various artifacts of the electronics are important. We find that these additional non-ideal behaviors can lead to unexpected effects or strong deterioration of the system's performance. Specifically, we discuss implications of these new findings in a few applications in which single-photon detectors play a major role: the security of a quantum cryptographic protocol, the quality of single-photon-based random number generators and a few other applications. Finally, we describe an example of an optimized avalanche quenching circuit for a high-rate quantum key distribution system based on time-bin entangled photons.

  19. Wavelength-band-tuning photodiodes by using various metallic nanoparticles.

    PubMed

    Hwang, J D; Chan, Y D; Chou, T C

    2015-11-20

    Wavelength-band tuning was easily achieved in this work by depositing various metallic nanoparticles (NPs) on silicon p-n junction photodiodes (PDs). The normalization spectrum of the PDs deposited with gold (Au) NPs reveals a high-wavelength pass characteristic; the PDs with silver (Ag) NPs coating behave as a low-wavelength pass, and the PDs with Au/Ag bimetallic NPs appear as a band-wavelength pass PD with a full width at half maximum of 450 ∼ 630 nm. The issue of wavelength-band tuning is due to the different plasmonic resonance wavelengths associated with various metallic NPs. The extinction plot shows the Au NPs have a longer resonant wavelength of about 545 nm, leading to the incident light with a wavelength near or longer than 545 nm scattered by the Au NPs, hence a high-wavelength pass PD. The PDs with Ag NPs, due to the Ag NPs, exhibit a short resonant wavelength of 430 nm, and the short-wavelength incident light is absorbed near the silicon (Si) surface, where the Ag NPs is atop it. The shorter-wavelength incident light is enhanced by the plasmonic resonance of Ag NPs, making a low-wavelength PD. The Au/Ag NPs presents a resonant wavelength of 500 nm between the Au and Ag NPs. For the incident light with a wavelength close to 500 nm, a constructive interference causes a substantial increase in the local electromagnetic field, hence leading to a band-wavelength pass PD. PMID:26508114

  20. Hybrid and electric low-noise cars cause an increase in traffic accidents involving vulnerable road users in urban areas.

    PubMed

    Brand, Stephan; Petri, Maximilian; Haas, Philipp; Krettek, Christian; Haasper, Carl

    2013-01-01

    Due to resource scarcity, the number of low-noise and electric cars is expected to increase rapidly. The frequent use of these cars will lead to a significant reduction of traffic related noise and pollution. On the other hand, due to the adaption and conditioning of vulnerable road users the number of traffic accidents involving pedestrians and bicyclists is postulated to increase as well. Children, older people with reduced eyesight and the blind are especially reliant on a combination of acoustic and visual warning signals with approaching or accelerating vehicles. This is even more evident in urban areas where the engine sound is the dominating sound up to 30 kph (kilometres per hour). Above this, tyre-road interaction is the main cause of traffic noise. With the missing typical engine sound a new sound design is necessary to prevent traffic accidents in urban areas. Drivers should not be able to switch the sound generator off. PMID:23083396

  1. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    NASA Astrophysics Data System (ADS)

    Hyun, H. J.; Anderson, T.; Angelaszek, D.; Baek, S. J.; Copley, M.; Coutu, S.; Han, J. H.; Huh, H. G.; Hwang, Y. S.; Im, S.; Jeon, H. B.; Kah, D. H.; Kang, K. H.; Kim, H. J.; Kim, K. C.; Kwashnak, K.; Lee, J.; Lee, M. H.; Link, J. T.; Lutz, L.; Mitchell, J. W.; Nutter, S.; Ofoha, O.; Park, H.; Park, I. H.; Park, J. M.; Patterson, P.; Seo, E. S.; Wu, J.; Yoon, Y. S.

    2015-07-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm2 at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests.

  2. A room temperature LSO/PIN photodiode PET detector module that measures depth of interaction

    SciTech Connect

    Moses, W.W.; Derenzo, S.E.; Melcher, C.L.; Manente, R.A.

    1994-11-01

    We present measurements of a 4 element PET detector module that uses a 2{times}2 array of 3 mm square PIN photodiodes to both measure the depth of interaction (DOI) and identify the crystal of interaction. Each photodiode is coupled to one end of a 3{times}3{times}25 mm LSO crystal, with the opposite ends of all 4 crystals attached to a single PMT that provides a timing signal and initial energy discrimination. Each LSO crystal is coated with a {open_quotes}lossy{close_quotes} reflector, so the ratio of light detected in the photodiode and PMT depends on the position of interaction in the crystal, and is used to determine this position on an event by event basis. This module is operated at +25{degrees}C with a photodiode amplifier peaking time of 2 {mu}s. When excited by a collimated beam of 511 keV photons at the photodiode end of the module (i.e. closest to the patient), the DOI resolution is 4 mm fwhm and the crystal of interaction is identified correctly 95% of the time. When excited at the opposite end of the module, the DOI resolution is 13 mm fwhm and the crystal of interaction is identified correctly 73% of the time. The channel to channel variations in performance are minimal.

  3. Longterm changes of silicon photodiodes and their use for photometric standardization.

    PubMed

    Eppeldauer, G

    1990-05-20

    A secondary standard silicon photodiode matched with a V-lambda filter was calibrated against primary standard, self-calibrated inversion layer silicon photodiodes, to achieve a high accuracy photometer, according to the new definition of the canadela (the photometric base unit). The measured several percent/year specular spectral reflectance change of the windowless primary standard photodiodes was eliminated by their repeated self-calibration. This self-calibration also eliminated the measured several tenth of a percent/year spectral response change of the secondary standard silicon photodiode. The secondary standard detector could be a nonunity quantum efficiency light detector. The spectral response calibration of the V-lambda matched detector of medium spectral mismatch (f(1)= 3.0%) against the absolute spectral responses of three self-calibrated photodiodes resulted in a standard deviation of 0.17% in luminous flux (lumen) calibration. Also illuminance (lux) and light intensity (candela) calibrations were derived from the above primary photometric calibration. It is shown that the V-lambda matched photometer with the above spectral calibration can be used for accurate photometric measurements for all kinds of light sources of known spectral power distribution. PMID:20563163

  4. 64-element photodiode array for scintillation detection of x-rays

    NASA Astrophysics Data System (ADS)

    Wegrzecki, Maciej; Wolski, Dariusz; Bar, Jan; Budzyński, Tadeusz; Chłopik, Arkadiusz; Grabiec, Piotr; Kłos, Helena; Panas, Andrzej; Piotrowski, Tadeusz; Słysz, Wojciech; Stolarski, Maciej; Szmigiel, Dariusz; Wegrzecka, Iwona; Zaborowski, Michał

    2014-08-01

    The paper presents the design, technology and parameters of a new, silicon 64-element linear photodiode array developed at the Institute of Electron Technology (ITE) for the detection of scintillations emitted by CsI scintillators (λ≈550 nm). The arrays are used in a device for examining the content of containers at border crossings under development at the National Centre for Nuclear Research. Two arrays connected with a scintillator block (128 CsI scintillators) form a 128-channel detection module. The array consists of 64 epiplanar photodiode structures (5.1 × 7.2 mm) and a 5.3 mm module. p+-ν-n+ photodiode structures are optimised for the detection of radiation of λ≈ 550 nm wavelength with no voltage applied (photovoltaic mode). The structures are mounted on an epoxy-glass laminate substrate, copper-clad on both sides, on which connections with a common anode and separate cathode leads are located. The photosensitive surface of photodiodes is covered with a special silicone gel, which protects photodiodes against the mechanical impact of scintillators

  5. Photoelectric conversion characteristics of c-Se-based thin-film photodiodes in imaging device

    NASA Astrophysics Data System (ADS)

    Imura, S.; Kikuchi, K.; Miyakawa, K.; Ohtake, H.; Kubota, M.

    2015-06-01

    Herein, we report the use of high-efficiency crystalline-selenium-based (c-Se-based) thin-film heterojunction photodiodes in imaging devices. As a novel experiment, we use an image pickup tube with a photoelectric conversion layer consisting of n-gallium oxide (Ga2O3)/p-c-Se heterojunction photodiodes to obtain high-resolution images at a relatively low applied voltage. We reduce the thickness of the Ga2O3 layer to expand the depletion layer into the c-Se layer at a lower applied voltage. In addition, Sn-doping of the Ga2O3 layer effectively increases the carrier concentration, thereby allowing the photodiode to operate at lower voltage.

  6. Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

    SciTech Connect

    Siwak, N. P.; Fan, X. Z.; Ghodssi, R.; Kanakaraju, S.; Richardson, C. J. K.

    2014-10-06

    An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We have fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.

  7. Fast, Deep-Record-Length, Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

    NASA Astrophysics Data System (ADS)

    Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

    2014-10-01

    HyperV Technologies has been developing an imaging diagnostic comprised of an array of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers of 100 to 1000 pixels can be constructed. By interfacing analog photodiode systems directly to commercial analog-to-digital converters and modern memory chips, a prototype 100 pixel array with an extremely deep record length (128 k points at 20 Msamples/s) and 10 bit pixel resolution has already been achieved. HyperV now seeks to extend these techniques to construct a prototype 1000 Pixel framing camera with up to 100 Msamples/sec rate and 10 to 12 bit depth. Preliminary experimental results as well as Phase 2 plans will be discussed. Work supported by USDOE Phase 2 SBIR Grant DE-SC0009492.

  8. Fast, Deep-Record-Length, Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

    NASA Astrophysics Data System (ADS)

    Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

    2015-11-01

    HyperV Technologies has been developing an imaging diagnostic comprised of an array of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers can be constructed. By interfacing analog photodiode systems directly to commercial analog-to-digital converters and modern memory chips, a scalable solution for 100 to 1000 pixel systems with 14 bit resolution and record-lengths of 128k frames has been developed. HyperV is applying these techniques to construct a prototype 1000 Pixel framing camera with up to 100 Msamples/sec rate and 10 to 14 bit depth. Preliminary experimental results as well as future plans will be discussed. Work supported by USDOE Phase 2 SBIR Grant DE-SC0009492.

  9. A 10MHz Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

    NASA Astrophysics Data System (ADS)

    Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

    2013-10-01

    HyperV Technologies has been developing an imaging diagnostic comprised of arrays of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers of 100 to 10,000 pixels can be constructed. By interfacing analog photodiode systems directly to commercial analog to digital convertors and modern memory chips, a prototype pixel with an extremely deep record length (128 k points at 40 Msamples/s) has been achieved for a 10 bit resolution system with signal bandwidths of at least 10 MHz. Progress on a prototype 100 Pixel streak camera employing this technique is discussed along with preliminary experimental results and plans for a 10,000 pixel imager. Work supported by USDOE Phase 1 SBIR Grant DE-SC0009492.

  10. Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction

    NASA Astrophysics Data System (ADS)

    Nakagomi, Shinji; Momo, Toshihiro; Takahashi, Syuhei; Kokubun, Yoshihiro

    2013-08-01

    A deep Ultraviolet (UV) photodiode was fabricated using a heterojunction between β-Ga2O3 with a band gap of 4.9 eV, and 6H-SiC with a band gap of 3.02 eV, and investigated its UV sensitivity. A thin β-Ga2O3 layer (200 nm) was prepared on a p-type 6H-SiC substrate through gallium evaporation in oxygen plasma. The device showed good rectifying properties. Under reverse bias, the current increased linearly with increasing deep-UV light intensity. The responsivity of the photodiode was highest to deep-UV light below a wavelength of 260 nm. The photodiode's response time to deep-UV light was in the order of milliseconds.

  11. Characterization of GaSb photodiode for gamma-ray detection

    NASA Astrophysics Data System (ADS)

    Juang, Bor-Chau; Prout, David L.; Liang, Baolai; Chatziioannou, Arion F.; Huffaker, Diana L.

    2016-08-01

    We extract the carrier mobility-lifetime products for epitaxially grown GaSb and demonstrate the spectral response to gamma rays of a GaSb p–i–n photodiode with a 2-µm-thick absorption region. Under exposure from 55Fe and 241Am radioactive sources at 140 K, the photodiode exhibits full width at half maximum energy resolutions of 1.238 ± 0.028 and 1.789 ± 0.057 keV at 5.89 and 59.5 keV, respectively. We observe good linearity of the GaSb photodiode across a range of photon energies. The electronic noise and charge trapping noise are measured and shown to be the main components limiting the measured energy resolutions.

  12. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

    PubMed

    Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2016-08-22

    We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm. PMID:27557187

  13. Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

    NASA Astrophysics Data System (ADS)

    Siwak, N. P.; Fan, X. Z.; Kanakaraju, S.; Richardson, C. J. K.; Ghodssi, R.

    2014-10-01

    An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We have fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.

  14. Analysis of the photodiode boundary layer transition indicator. LDRD final report

    SciTech Connect

    Kuntz, D.W.; Wilken, A.C.; Payne, J.L.

    1994-06-01

    The photodiode transition indicator is a device which has been successfully used to determine the onset of boundary layer transition on numerous hypersonic flight vehicles. The exact source of the electromagnetic radiation detected by the photodiode at transition was not understood. In some cases early saturation of the device occurred, and the device failed to detect transition. Analyses have been performed to determine the source of the radiation producing the photodiode signal. The results of these analyses indicate that the most likely source of the radiation is blackbody emission from the heatshield material bordering the quartz window of the device. Good agreement between flight data and calculations based on this radiation source has been obtained. Analyses also indicate that the most probable source of the radiation causing early saturation is blackbody radiation from carbon particles which break away from the nosetip during the ablation process.

  15. Design and fabrication of low-cost reconfigurable microstrip antenna using photodiode as optical switching

    NASA Astrophysics Data System (ADS)

    Kusumawati, E. R.; Pramono, Y. H.; Rubiyanto, A.

    2014-09-01

    Design, fabrication, and characterization prototype of reconfigurable dipole microstrip antenna using photodiode as optical switching have been conducted in the Laboratory for Optical and Microwave Physics Department Faculty of ITS. This paper presents a new reconfigurable antenna design using photodiode as optical switching. In order to be optical switching, photodiode must be illuminated by optical source. The optical source used is Infrared with power 8 mW. Antenna is fabricated in FR-4 substrate which has 1.6 mm thick and 4.8 relative permittivity value. The dimension of the substrate is 131 mm × 21.5 mm × 1.6 mm. The structure of antenna is Coplanar Stripline (CPS) dipole. Measurement is conducted in two state. First state is photodiodes unilluminated Infrared and the second state is illuminated. The measurement result indicate that if condition is not illuminated by Infrared (OFF-state) antenna has resonance frequency of 2010 MHz and 2120 MHz. At frequency 2010 MHz, S11 value -35.7 dB and bandwidth 57 MHz, meanwhile at frequency 2120 MHz, S11 value -17.3 dB and bandwidth 42 MHz. Then if photodiode was illuminated by infrared (ON-state), antenna work at frequency 2007 MHz with S11 value -41.8 dB and bandwidth 61 MHz and 2113 MHz with S11 value -19.4 and bandwidth 47 MHz. There was frequency shifting from 2010 MHz to 2007 MHz and 2120 MHz to 2113 MHz of 5 MHz. At ON state, S11 value also was shifting. There was 6.1 dB and 2.1 dB. Bandwidth at ON-state is wider than OFF state. Microstrip antenna with a reconfigurable optical switching photodiode has several advantages. The advantages are more easily fabricated and the cost is relatively cheaper than the other techniques of optical switching.

  16. Injection photodiodes based on low-resistivity ZnS single crystals

    SciTech Connect

    Losev, V. V.

    2009-12-15

    Results of an experimental study of Ni-n-n{sup +}-In photodiode structures fabricated from a low-resistivity ZnS:Al crystal (n{sup +}-region) are reported. The high-resistivity compensated n-type layer is produced by thermal diffusion of silver. The photodiodes exhibit an injection amplification of the photocurrent under a forward bias of 1-10 V. The dependence of the currents through the diodes on the thickness of the n-type layer in the dark and under UV irradiation is determined. The photosensitivity is at a maximum in the fundamental absorption range in a narrow spectral band.

  17. Development of Fuses for Protection of Geiger-Mode Avalanche Photodiode Arrays

    NASA Astrophysics Data System (ADS)

    Grzesik, Michael; Bailey, Robert; Mahan, Joe; Ampe, Jim

    2015-11-01

    Current-limiting fuses composed of Ti/Al/Ni were developed for use in Geiger-mode avalanche photodiode arrays for each individual pixel in the array. The fuses were designed to burn out at ˜4.5 × 10-3 A and maintain post-burnout leakage currents less than 10-7 A at 70 V sustained for several minutes. Experimental fuse data are presented and successful incorporation of the fuses into a 256 × 64 pixel InP-based Geiger-mode avalanche photodiode array is reported.

  18. Improved x-ray detection and particle identification with avalanche photodiodes

    SciTech Connect

    Diepold, Marc Franke, Beatrice; Götzfried, Johannes; Hänsch, Theodor W.; Krauth, Julian J.; Mulhauser, Françoise; Nebel, Tobias; Pohl, Randolf; Fernandes, Luis M. P.; Amaro, Fernando D.; Gouvea, Andrea L.; Monteiro, Cristina M. B.; Santos, Joaquim M. F. dos; Machado, Jorge; Amaro, Pedro; Santos, José Paulo; and others

    2015-05-15

    Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work, we report on a fitting technique used to account for different detector responses resulting from photoabsorption in the various avalanche photodiode layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2 and corrects the timing information by up to 25 ns to account for space dependent electron drift time. In addition, this waveform analysis is used for particle identification, e.g., to distinguish between x-rays and MeV electrons in our experiment.

  19. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

    SciTech Connect

    Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

    2012-10-31

    The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 {mu}m is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

  20. A near infrared organic photodiode with gain at low bias voltage

    SciTech Connect

    Campbell, Ian H; Crone, Brian K

    2009-01-01

    We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.

  1. Hybrid photodetector for single-molecule spectroscopy and microscopy

    PubMed Central

    Michalet, X.; Cheng, Adrian; Antelman, Joshua; Suyama, Motohiro; Arisaka, Katsushi; Weiss, Shimon

    2011-01-01

    We report benchmark tests of a new single-photon counting detector based on a GaAsP photocathode and an electron-bombarded avalanche photodiode developed by Hamamatsu Photonics. We compare its performance with those of standard Geiger-mode avalanche photodiodes. We show its advantages for FCS due to the absence of after-pulsing and for fluorescence lifetime measurements due to its excellent time resolution. Its large sensitive area also greatly simplifies setup alignment. Its spectral sensitivity being similar to that of recently introduced CMOS SPADs, this new detector could become a valuable tool for single-molecule fluorescence measurements, as well as for many other applications. PMID:21822361

  2. HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays

    NASA Astrophysics Data System (ADS)

    Reine, M. B.; Marciniec, J. W.; Wong, K. K.; Parodos, T.; Mullarkey, J. D.; Lamarre, P. A.; Tobin, S. P.; Gustavsen, K. A.; Williams, G. M.

    2007-08-01

    This paper reports data for back-illuminated planar n-on-p HgCdTe electron-initiated avalanche photodiode (e-APD) 4 × 4 arrays with large unit cells (250 × 250 μm2). The arrays were fabricated from p-type HgCdTe films grown by liquid phase epitaxy (LPE) on CdZnTe substrates. The arrays were bump-mounted to fanout boards and characterized in the back-illuminated mode. Gain increased exponentially with reverse bias voltage, and the gain versus bias curves were quite uniform from element to element. The maximum gain measured was 648 at -11.7 V for a cutoff wavelength of 4.06 μm at 160 K. For the same reverse-bias voltage, the gains measured at 160 K for elements with two different cutoff wavelengths (3.54 μm and 4.06 μm at 160 K) show an exponential increase with increasing cutoff wavelength, in agreement with Beck’s empirical model for gain versus voltage and cutoff wavelength in HgCdTe e-APDs. Spot scan data show that both the V = 0 response and the gain at V = -5.0 V are spatially uniform over the large junction area. To the best of our knowledge, these are the first spot scan data for avalanche gain ever reported for HgCdTe e-APDs. Capacitance versus voltage data are consistent with an ideal abrupt junction having a donor concentration equal to the indium concentration in the LPE film.

  3. Experimental analysis of a novel and low-cost pin photodiode dosimetry system for diagnostic radiology

    NASA Astrophysics Data System (ADS)

    Nazififard, Mohammad; Suh, Kune Y.; Mahmoudieh, Afshin

    2016-07-01

    Silicon PIN photodiode has recently found broad and exciting applications in the ionizing radiation dosimetry. In this study a compact and novel dosimetry system using a commercially available PIN photodiode (BPW34) has been experimentally tested for diagnostic radiology. The system was evaluated with clinical beams routinely used for diagnostic radiology and calibrated using a secondary reference standard. Measured dose with PIN photodiode (Air Kerma) varied from 10 to 430 μGy for tube voltages from 40 to 100 kVp and tube current from 0.4 to 40 mAs. The minimum detectable organ dose was estimated to be 10 μGy with 20% uncertainty. Results showed a linear correlation between the PIN photodiode readout and dose measured with standard dosimeters spanning doses received. The present dosimetry system having advantages of suitable sensitivity with immediate readout of dose values, low cost, and portability could be used as an alternative to passive dosimetry system such as thermoluminescent dosimeter for dose measurements in diagnostic radiology.

  4. AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Ren, Min; Maddox, Scott J.; Woodson, Madison E.; Chen, Yaojia; Bank, Seth R.; Campbell, Joe C.

    2016-05-01

    We report AlxIn1-xAsySb1-y separate absorption, charge, and multiplication avalanche photodiodes (APDs) that operate in the short-wavelength infrared spectrum. They exhibit excess noise factor less or equal to that of Si and the low dark currents typical of III-V compound APDs.

  5. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    PubMed

    Aull, Brian

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging. PMID:27070609

  6. Fabrication and performance of intrinsic germanium photodiodes. [for atmospheric IR spectroscopy

    NASA Technical Reports Server (NTRS)

    Beiting, E. J., III; Feldman, P. D.

    1977-01-01

    The paper presents fabrication details for an intrinsic germanium photodiode developed for study of atmospheric constituents, the airglow and auroras in the 1-2 micron spectral range. Attention is given to cutting of the single crystal, spreading of the lithium dispersion, sputtering of a gold coating, and surface passivation. A wavelength response curve is presented.

  7. The blocking probability of Geiger-mode avalanche photo-diodes

    NASA Technical Reports Server (NTRS)

    Moision, Bruce; Srinivasan, Meera; Hamkins, Jon

    2005-01-01

    When a photo is detected by a Geiger-mode avalanche photo-diode (GMAPD), the detector is rendered inactive, or blocked, for a certain period of time. In this paper we derive the blocking probability for a GMAPD whose input is either an unmodulated, Benoulli modulated or pulse-position-modulated Poisson process.

  8. Photon Detection with Cooled Avalanche Photodiodes: Theory and Preliminary Experimental Results

    NASA Technical Reports Server (NTRS)

    Robinson, D. L.; Hays, D. A.

    1985-01-01

    Avalanche photodiodes (APDs) can be operated in a geiger-tube mode so that they can respond to single electron events and thus be used as photon counting detectors. Operational characteristics and theory of APDs while used in this mode are analyzed and assessed. Preliminary experimental investigation of several commercially available APDs has commenced, and initial results for dark count statistics are presented.

  9. Photoionization of Trapped Carriers in Avalanche Photodiodes to Reduce Afterpulsing During Geiger-Mode Photon Counting

    NASA Technical Reports Server (NTRS)

    Krainak, Michael A.

    2005-01-01

    We reduced the afterpulsing probability by a factor of five in a Geiger-mode photon-counting InGaAs avalanche photodiode by using sub-band-gap (lambda = 1.95 micron) laser diode illumination, which we believe photoionizes the trapped carriers.

  10. Scintillation light read-out by thin photodiodes in silicon wells

    NASA Astrophysics Data System (ADS)

    Allier, C. P.; Hollander, R. W.; Sarro, P. M.; van Eijk, C. W. E.

    2000-03-01

    Several applications of X-ray and gamma ray imaging detectors, e.g. in medical diagnostics, require millimeter or sub-millimeter spatial resolution and good energy resolution. In order to achieve such features we have proposed a new type of camera, which takes advantage of micromachining technology. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. Several parameters of the photodiode need to be optimised: uniformity and efficiency of the light detection, gain, electronic noise and breakdown voltage. In order to evaluate these parameters we have processed 3×3 arrays of 1.8 mm2, ˜10 μm thick photodiodes using (1 0 0) wafers etched in a KOH solution. Their optical response at 675 nm wavelength is comparable to that of a 500 μm thick silicon PIN diode. Their low light detection efficiency is compensated by internal amplification. Several scintillator materials have been positioned in the wells on top of the thin photodiodes, i.e. a 200 μm thick film of structured CsI(Tl), single crystals of CsI(Tl) and Lu2S3(Ce3+). First experiments of γ-ray detection have been performed.