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Sample records for arf immersion lithography

  1. Defectivity reduction studies for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Matsunaga, Kentaro; Kondoh, Takehiro; Kato, Hirokazu; Kobayashi, Yuuji; Hayasaki, Kei; Ito, Shinichi; Yoshida, Akira; Shimura, Satoru; Kawasaki, Tetsu; Kyoda, Hideharu

    2007-03-01

    Immersion lithography is widely expected to meet the manufacturing requirements of future device nodes. A critical development in immersion lithography has been the construction of a defect-free process. Two years ago, the authors evaluated the impact of water droplets made experimentally on exposed resist films and /or topcoat. (1) The results showed that the marks of drying water droplet called watermarks became pattern defects with T-top profile. In the case that water droplets were removed by drying them, formation of the defects was prevented. Post-exposure rinse process to remove water droplets also prevented formation of the defects. In the present work, the authors evaluated the effect of pre- and post-exposure rinse processes on hp 55nm line and space pattern with Spin Rinse Process Station (SRS) and Post Immersion Rinse Process Station (PIR) modules on an inline lithography cluster with the Tokyo Electron Ltd. CLEAN TRACK TM LITHIUS TM i+ and ASML TWINSCAN XT:1700Fi , 193nm immersion scanner. It was found that total defectivity is decreased by pre- and post-exposure rinse. In particular, bridge defects and large bridge defects were decreased by pre- and post-exposure rinse. Pre- and post-exposure rinse processes are very effective to reduce the bridge and large bridge defects of immersion lithography.

  2. Ecology and high-durability injection locked laser with flexible power for double-patterning ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Umeda, Hiroshi; Tsushima, Hiroaki; Watanabe, Hidenori; Tanaka, Satoshi; Yoshino, Masaya; Matsumoto, Shinich; Tanaka, Hiroshi; Kurosu, Akihiko; Kawasuji, Yasufumi; Matsunaga, Takashi; Fujimoto, Junichi; Mizoguchi, Hakaru

    2011-04-01

    ArF immersion technology has been used widely in volume production for 45nm node. For 32nm node and beyond, double patterning technology with ArF immersion lithography is considered to be the main stream solution until EUV is ready. Our target is to reduce CoO(Cost of ownership) and we aim to develop for ecology and high durability laser. We will introduce the latest performance data of the laser built for ArF immersion lithography under the EcoPhoton concept. Eco-photon concept: -CoC (Cost of Consumable) -CoD (Cost of Downtime) -CoE(Cost of Energy & Environment) We have developed flexible and high power injection-lock ArF excimer laser for double patterning, GT62A-1SxE (Max90W/6000Hz/Flexible power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform5). A number of innovative and unique technologies are implemented on GT62A-1SxE. In addition, GT62A-1SxE is the laser matching the enhancement technology of advanced illumination systems. For example, in order to provide illumination power optimum for resist sensitivity, it has extendable power from 60W to 90W. We have confirmed durability under these concept with the regulated operation condition with flexible power 60-90W. We show the high durability data of GT62A-1SxE with Eco-Photon concept. In addition to the results the field reliability and availability of our Giga Twin series (GT6XA). We also show technologies which made these performances and its actual data. A number of innovative and unique technologies are implemented on GT62A.

  3. Understanding the photoresist surface-liquid interface for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Conley, Will; LeSuer, Robert J.; Fan, Frank F.; Bard, Allen J.; Taylor, Chris; Tsiartas, Pavlos; Willson, Grant; Romano, Andrew; Dammel, Ralph

    2005-05-01

    Extraction of small molecule components into water from photoresist materials designed for 193 nm immersion lithography has been observed. Leaching of photoacid generator (PAG) has been monitored using three techniques: liquid scintillation counting (LSC); liquid chromatography mass spectrometry (LCMS); and scanning electrochemical microscopy (SECM). LSC was also used to detect leaching of residual casting solvent (RCS) and base. The amount of PAG leaching from the resist films, 30 - 50 ng/cm2, was quantified using LSC. Both LSC and LCMS results suggest that PAG and photoacid leach from the film only upon initial contact with water (within 10 seconds) and minimal leaching occurs thereafter for immersion times up to 30 minutes. Exposed films show an increase in the amount of photoacid anion leaching by upwards of 20% relative to unexposed films. Films pre-rinsed with water for 30 seconds showed no further PAG leaching as determined by LSC. No statistically significant amount of residual casting solvent was extracted after 30 minutes of immersion. Base extraction was quantified at 2 ng/cm2 after 30 seconds. The leaching process is qualitatively described by a model based on the stratigraphy of resist films.

  4. Green solution: 120W ArF immersion light source supporting the next-generation multiple-pattering lithography

    NASA Astrophysics Data System (ADS)

    Kumazaki, Takahito; Ohta, Takeshi; Ishida, Keisuke; Tsushima, Hiroaki; Kurosu, Akihiko; Kakizaki, Kouji; Matsunaga, Takashi; Mizoguchi, Hakaru

    2015-03-01

    The difficulty of EUV lithography system development has prolonged the industry's dependence on ArF excimer lasers to realize further advancements in lithography process technologies. Smaller CD with reduced cost requires tighter specifications, and the potential extension to 450mm wafers introduces extremely difficult performance challenges on lasers. One of the most important features of the next generation lasers will be the ability to support green operations while further improving cost of ownership and performance. For example, electricity consumption costs and the dependence on rare gases, such as neon and helium, will become critical considerations for HVM process going forward. As a laser vendor, Gigaphoton continues to innovate and develop solutions that address these important issues. The latest model GT64A with its field-proven, twin-chamber platform has reduced environmental impact while upgrading performance and power. A variety of green technologies are employed on the GT64A. The first is the reduction of gas usage. Parameters, such as input power and gas pressure are closely monitored during operations and fed back to the injection/exhaust gas controller system. By applying a special algorithm, the laser gas consumption can be reduced by up to 50%. More than 96% of the gas used by the lasers is neon. Another rare gas that requires attention is Helium. Recently the unstable supply of helium became a serious worldwide issue. To cope with this situation, Gigaphoton is developing lasers that support completely helium-free operations.

  5. Study of the mask materials for PTD process and NTD process in practical ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Adachi, Takashi; Tani, Ayako; Hayano, Katsuya; Takamizawa, Hideyoshi

    2014-07-01

    In this report, we compared the lithographic performances between the conventional positive tone development (PTD) process and the negative tone development (NTD) process, using the lithography simulation. We selected the MoSi-binary mask and conventional 6% attenuated phase shift mask as mask materials. The lithographic performance was evaluated and compared after applying the optical proximity correction (OPC). The evaluation items of lithographic performance were the aerial image profile, the aerial image contrast, normalized image log slope (NILS), mask error enhancement factor (MEEF), and the bossung curves, etc. The designs for the evaluation were selected the simple contact hole and the metal layer sample design.

  6. Immersion lithography bevel solutions

    NASA Astrophysics Data System (ADS)

    Tedeschi, Len; Tamada, Osamu; Sanada, Masakazu; Yasuda, Shuichi; Asai, Masaya

    2008-03-01

    The introduction of Immersion lithography, combined with the desire to maximize the number of potential yielding devices per wafer, has brought wafer edge engineering to the forefront for advanced semiconductor manufactures. Bevel cleanliness, the position accuracy of the lithography films, and quality of the EBR cut has become more critical. In this paper, the effectiveness of wafer track based solutions to enable state-of-art bevel schemes is explored. This includes an integrated bevel cleaner and new bevel rinse nozzles. The bevel rinse nozzles are used in the coating process to ensure a precise, clean film edge on or near the bevel. The bevel cleaner is used immediately before the wafer is loaded into the scanner after the coating process. The bevel cleaner shows promise in driving down defectivity levels, specifically printing particles, while not damaging films on the bevel.

  7. High-n immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; Mulkens, Jan; Graeupner, Paul; McCafferty, Diane; Markoya, Louis; Donders, Sjoerd; Cortie, Rogier; Meijers, Ralph; Evangelista, Fabrizio; Samarakone, Nandarisi

    2008-03-01

    A two-year study on the feasibility of High-n Immersion Lithography shows very promising results. This paper reports the findings of the study. The evaluation shows the tremendous progress made in the development of second-generation immersion fluid technology. Candidate fluids from several suppliers have been evaluated. All the commercial fluids evaluated are viable, so there are a number of options. Life tests have been conducted on bench top fluid-handling systems and the results referenced to full-scale systems. Parameters such as Dose per Laser Pulse, Pulse Rate, Fluid Flow Rate, and Fluid Absorbency at 193nm, and Oxygen/Air Contamination Levels were explored. A detailed evaluation of phenomena such as Last Lens Element (LLE) contamination has been conducted. Lens cleaning has been evaluated. A comparison of High-n fluid-based technology and water-based immersion technology shows interesting advantages of High-n fluid in the areas of Defect and Resist Interaction. Droplet Drying tests, Resist Staining evaluations, and Resist Contrast impact studies have all been run. Defect-generating mechanisms have been identified and are being eliminated. The lower evaporation rate of the High-n fluids compared with water shows the advantages of High-n Immersion. The core issue for the technology, the availability of High-n optical material for use as the final lens element, is updated. Samples of LuAG material have been received from development partners and have been evaluated. The latest status of optical materials and the technology timelines are reported. The potential impact of the availability of the technology is discussed. Synergy with technologies such as Double Patterning is discussed. The prospects for <22nm (hp) are evaluated.

  8. Self-segregating materials for immersion lithography

    NASA Astrophysics Data System (ADS)

    Sanders, Daniel P.; Sundberg, Linda K.; Brock, Phillip J.; Ito, Hiroshi; Truong, Hoa D.; Allen, Robert D.; McIntyre, Gregory R.; Goldfarb, Dario L.

    2008-03-01

    In this paper, we employ the self-segregating materials approach used in topcoat-free resists for water immersion lithography to extend the performance of topcoat materials for water immersion and to increase the contact angles of organic fluids on topcoat-free resists for high index immersion lithography. By tailoring polymers that segregate to the air and resist interfaces of the topcoat, high contact angle topcoats with relatively low fluorine content are achieved. While graded topcoats may extend the performance and/or reduce the cost of topcoat materials, the large amount of unprotected acidic groups necessary for TMAH development prevent them from achieving the high contact angles and low hysteresis exhibited by topcoat-free resists. Another application of this self-segregating approach is tailoring resist surfaces for high index immersion. Due to the low surface tension and higher viscosities of organic fluids relative to water and their lower contact angles on most surfaces, film pulling cannot be prevented without dramatically reducing wafer scan rates; however, tuning the surface energy of the resist may be important to control stain morphology and facilitate fluid removal from the wafer. By tailoring fluoropolymer additives for high contact angles with second generation organic high index immersion fluids, we show herein that topcoat-free resists can be developed specifically for high index immersion lithography with good contact angles and lithographic imaging performance.

  9. Immersion and dry ArF scanners enabling 22nm HP production and beyond

    NASA Astrophysics Data System (ADS)

    Uehara, Yusaku; Ishikawa, Jun; Kohno, Hirotaka; Tanaka, Eiichiro; Ohba, Masanori; Shibazaki, Yuichi

    2012-03-01

    Pattern shrinks using multiple patterning techniques will continue to the 22nm half pitch (HP) node and beyond. The cutting-edge Nikon NSR-S621D immersion lithography tool, which builds upon the technology advancements of the NSR-S620D [1], was developed to satisfy the aggressive requirements for the 22 nm HP node and subsequent generations. The key design challenge for the S621D was to deliver further improvements to product overlay performance and CD uniformity, while also providing increased productivity. Since many different products are made within an IC manufacturing facility, various wafer process-related issues, including the flatness or grid distortion of the processed wafers and exposure-induced heating had to be addressed. Upgrades and enhancements were made to the S620D hardware and software systems to enable the S621D to minimize these process-related effects and deliver the necessary scanner performance. To enable continued process technology advancements, in addition to pattern shrinks at the most critical layers, resolution for less critical layers must also be improved proportionally. As a result, increased demand for dry ArF instead of KrF scanners is expected for less critical layers, and dry ArF tools are already being employed for some of these applications. Further, multiple patterning techniques, such as sidewall double patterning, actually enable use of dry ArF instead of immersion scanners for some critical layers having relaxed pattern resolution requirements. However, in order for this to be successful, the ArF dry tool must deliver overlay performance that is comparable to the latest generation immersion systems. Understanding these factors, an ArF dry scanner that has excellent overlay performance could be used effectively for critical layers and markedly improve cost of ownership (CoO). Therefore, Nikon has developed the NSR-S320F, a new dry ArF scanner also built upon the proven S620D Streamlign platform. By incorporating the

  10. Material design for immersion lithography with high refractive index fluid (HIF)

    NASA Astrophysics Data System (ADS)

    Miyamatsu, Takashi; Wang, Yong; Shima, Motoyuki; Kusumoto, Shiro; Chiba, Takashi; Nakagawa, Hiroki; Hieda, Katsuhiko; Shimokawa, Tsutomu

    2005-05-01

    ArF immersion lithography is considered as the most promising next generation technology which enables to a 45 nm node device manufacturing and below. Not only depth of focus enlargement, immersion lithography enables to use hyper numerical aperture (NA) larger than 1.0 and achieve higher resolution capability. For 193nm lithography, water is an ideal immersion fluid, providing suitable refractive index and transmission properties. Furthermore the higher refractive index fluid is expected to provide a potential extension of optical lithography to the 32 nm node. This paper describes the material design for immersion lithography with high refractive index fluid. We have developed promising high refractive index fluids which satisfy the requirement for immersion fluid by screening wide variety of organic compounds. The physical and chemical properties of this high refractive index fluid are discussed in detail. Also the topcoat material which has good matching with high refractive index fluid is developed. While this topcoat material is soluble into aqueous TMAH developer, it does not dissolve into water or high refractive index fluid and gives suitable contact angle for immersion scan exposure. Immersion exposure experiments using high refractive index fluid with and w/o topcoat material was carried out and its lithographic performance is presented in this paper.

  11. Comparison study for sub-0.13-μm lithography between ArF and KrF lithography

    NASA Astrophysics Data System (ADS)

    Kim, Seok-Kyun; Kim, YoungSik; Kim, Jin-Soo; Bok, Cheol-Kyu; Ham, Young-Mog; Baik, Ki-Ho

    2000-07-01

    In this paper we investigated the feasibility of printing sub-0.13 micrometers device patterns with ArF and KrF lithography by using experiment and simulation. To do this we evaluated various cell structures with different sizes from 0.26 micrometers to 0.20 micrometers pitch. In experiment 0.60NA ArF and 0.70NA KrF exposure tools, commercial and in house resists and bottom anti-reflective coating (BARC) materials are used. To predict and compare with experimental data we also used our developed simulation tool HOST base don diffused aerial iamge model. We found that ArF lithography performance is a little bit better than KrF and therefore 0.70NA KrF lithography can be used up to 0.12 micrometers design rule device and 0.60NA ArF lithography can be used up to 0.11 micrometers . But to get more than 10 percent expose latitude, 0.13 micrometers with KrF and 0.12 micrometers with ArF are the minimum design rule size. However to obtain process margin we had to use extreme off-axis illumination (OAI) which results in large isolated- dense bias and poor linearity including isolated pattern. Using higher NA can reduce ID bias and mask error factor. For contact hole it is more effective to use KrF lithography because resist thermal flow process can be used to shrink C/H size. Our developed ArF resist and BARC shows good performance and we can reduce k1 value up to 0.34. Through this study we verified again that ArF lithography can be applied for sub-0.13 micrometers device through sub-0.10 micrometers with high contrast resist and 0.75NA exposure tool.

  12. Development of cleaning process for immersion lithography

    NASA Astrophysics Data System (ADS)

    Chang, Ching Yu; Yu, D. C.; Lin, John C.; Lin, Burn J.

    2006-03-01

    In immersion lithography, DI water fills the space between the resist surface and the last lens element. However water is also a good solvent for most of the leaching compounds from resists. The leaching materials from the resist and the original impurities in the water from pipelines pose a significant risk on bottom lens deterioration, wafer surface particles, and facility contamination. If the bottom lens surface deteriorates, it can cause flare and reduce transparency. Particles on the wafer surface can degrade image formation. In addition to contaminating the facility, the impurity inside the water can cause stains or defects after the water is evaporated from the wafer surface. In order to reduce the impact of such contamination, we have evaluated many chemicals for removing organic contamination as well as particles. We have collected and characterized immersion-induced particles from cleaning studies on bare silicon wafers. We have also used oxide wafers to simulate the lens damage caused by the cleaning chemicals. In case, a mega sonic power is not suitable for scanners last lens element in production FABs, the emulsion concept has also been adopted to remove the lens organic contaminants. We have studied many chemical and mechanical methods for tool cleaning, and identified those that possess good organic solubility and particle removal efficiency. These cleaning methods will be used in periodic maintenance procedures to ensure freedom from defects in immersion lithography.

  13. Film stacking architecture for immersion lithography process

    NASA Astrophysics Data System (ADS)

    Goto, Tomohiro; Sanada, Masakazu; Miyagi, Tadashi; Shigemori, Kazuhito; Kanaoka, Masashi; Yasuda, Shuichi; Tamada, Osamu; Asai, Masaya

    2008-03-01

    In immersion lithography process, film stacking architecture will be necessary due to film peeling. However, the architecture will restrict lithographic area within a wafer due to top side EBR accuracy In this paper, we report an effective film stacking architecture that also allows maximum lithographic area. This study used a new bevel rinse system on RF3 for all materials to make suitable film stacking on the top side bevel. This evaluation showed that the new bevel rinse system allows the maximum lithographic area and a clean wafer edge. Patterning defects were improved with suitable film stacking.

  14. Evolution of light source technology to support immersion and EUV lithography

    NASA Astrophysics Data System (ADS)

    Blumenstock, Gerry M.; Meinert, Christine; Farrar, Nigel R.; Yen, Anthony

    2005-01-01

    Since the early 1980's, the resolution of optical projection lithography has improved dramatically primarily due to three factors: increases in projection lens numerical aperture, reduction of the imaging source wavelength, and continued reduction of the k1 factor. These three factors have been enabled by the concurrent improvements in lens making technology, DUV light sources, photoresist technology, and resolution enhancement techniques. The DUV light source, excimer KrF and ArF lasers, has entered main stream production and now images more than 50% of the critical layers in today's leading edge devices. Looking forward to both immersion lithography and beyond to EUV lithography, new light source technologies must be created to enable the continued progression of shrinking feature sizes embodied by Moore's law.

  15. CD metrology for avoiding shrinkage of ArF resist patterns in 100 nm ArF lithography

    NASA Astrophysics Data System (ADS)

    You, Tae-Jun; Bok, Cheol-Kyu; Shin, Ki-Soo

    2002-07-01

    ML 4689-80 CD Metrology for Avoiding Shrinkage of ArF Resist Patterns in 100nm ArF Lithography Tae-Jun You, Cheolkyu Bok, Ki-Soo Shin Hynix Semiconductor, San 136-1 Amiri, Bubal-eub, Ichon-si, Kyongki-do 467-701, Korea We have observed CD(Critical Dimension) shrinkage of acrylate type ArF resist patterns during SEM measurement. CD change was 30% shrinkage for line pattern and 10% expansion for contact hole patterns after 30 times measurement. CD shrinkage was proportion to line pattern size but no relation with LER(Line Edge Roughness). We confirm that CD shrinkage different from resist to resist and SEM measurement condition. CD shrinkage was bigger for acrylate type resist than COMA(Cyclo Olefin Maleic Anhydride) type resist and smaller at lower electron voltage and current conditions. In order to get the improvement of CD shrinkage, we performed electron-beam curing before SEM measurement. Above (see paper for formula) electron-beam dose condition, CD shrinkage improved from 10% to 3%. However, this method caused OPC(Optical Proximity Correction) issue as CD also changed after electron-beam curing. Therefore, we tried to develop a new measurement method instead of applying additional process technique. In this paper, we will describe our CD measurement method, Off-Site measurement technique, for 100nm DRAM lithography. The Off-Site CD measurement repeatability (formula available in paper) was controlled below (see paper).

  16. Evaluation of ArF lithography for 45-nm node implant layers

    NASA Astrophysics Data System (ADS)

    Bailey, T. C.; Maynollo, J.; Perez, J. J.; Popova, I.; Zhang, B.

    2007-03-01

    Scaling of designs to the 45nm or future nodes presents challenges for KrF lithography. The purpose of this work was to explore several aspects of ArF lithography for implant layers. A comparison of dark loss seen in a KrF resist and TARC system to that seen in an ArF system showed significant differences. While the KrF resist yielded dark loss that varied with CD and pitch, the ArF resist showed very little dark loss and no significant variation through the design space. ArF resist were observed to have marginal adhesion to various substrates. Improvements in adhesion performance were shown by pre-treating the substrate with various processes, of which an ozone clean provided the best results. Optimization of the HMDS priming conditions also improved adhesion, and it was observed that the HMDS reaction proceeds at different rates on different subsatrates, which is particularly important for implant layers where the resist must adhere to both Si and SiO II. The effect of ArF resist profile with varying reflectivity swing position is shown, and some investigation into reflectivity optimization techniques was performed. Low-index ArF TARC was shown to reduce the CD variation over polysilicon topography, and wet developable BARC was demonstrated to provide consistent profiles on both Si and SiO II substrates. Finally, a comparison of ArF and KrF resists after As implant indicates that the ArF resist showed similar shrinkage performance to the KrF resist.

  17. Double patterning combined with shrink technique to extend ArF lithography for contact holes to 22nm node and beyond

    NASA Astrophysics Data System (ADS)

    Miao, Xiangqun; Huli, Lior; Chen, Hao; Xu, Xumou; Woo, Hyungje; Bencher, Chris; Shu, Jen; Ngai, Chris; Borst, Christopher

    2008-03-01

    Lithography becomes much more challenging when CD shrinks to 22nm nodes. Since EUV is not ready, double patterning combined with Resolution Enhancement Technology (RET) such as shrink techniques seems to be the most possible solution. Companies such as TSMC [1] and IBM [2] etc. are pushing out EUV to extend immersion ArF lithography to 32nm/22nm nodes. Last year, we presented our development work on 32nm node contact (50nm hole at 100nm pitch) using dry ArF lithography by double patterning with SAFIER shrink process[3]. To continue the work, we further extend our dry litho capability towards the 22nm node. We demonstrated double patterning capability of 40nm holes at 80nm pitch using ASML XT1400E scanner. It seems difficult to print pitches below 140nm on dry scanner in single exposure which is transferred into 70nm pitch with double patterning. To push the resolution to 22nm node and beyond, we developed ArF immersion process on ASML XT1700i-P system at the College of Nanoscale Science and Engineering (Albany, NY) combined with a SAFIER process. We achieved single exposure process capability of 25nm holes at 128nm pitch after shrink. It enables us to print ~25nm holes at pitch of 64nm with double patterning. Two types of hard mask (HM), i.e. TIN and a-Si were used in both dry and immersion ArF DP processes. The double patterning process consists of two HM litho-shrink-etch steps. The dense feature is designed into two complementary parts on two masks such that the density is reduced by half and minimum pitch is increased by at least a factor of 21/2 depending on design. The complete pattern is formed after the two HM litho-shrink-etch steps are finished.

  18. Resolution enhancement technology for ArF dry lithography at 65 nm node

    NASA Astrophysics Data System (ADS)

    Gao, Songbo; Li, Yanqui

    2007-12-01

    The performance of ArF dry lithography at 65 nm node was studied together with RET. Commercial software Prolith 9.0 and in-house-software MicroCruiser 5.0 were used for simulation and mass data process. The combination of different phase shift mask (PSM), off axis illumination and patterns were chosen for this research. The image contrast, nominal image log-slope (NILS), depth of focus (DOF) and resist profile were considered to judge the lithography performance. The results show that the combination of small sigma conventional illumination and alternating phase shift mask (alt- PSM) is the best choice for Line/Space (L/S) patterns of different pitches. The isolate L/S pattern can be imaged with a large image contrast and DOF if alt-PSM and several kinds of illumination (such as small sigma, annular, and quasar illumination) are joined together. For semi-dense and dense L/S pattern, good lithography performance can be reached by using only small sigma illumination and alt-PSM. The impact of polarization illumination was also considered. Y-polarization illumination enhances the image contrast, NILS and the DOF for most conditions. The Z-orientation resist image fidelity was studied by optimization of the double bottom anti-reflection coating (DBARC) and resist thickness. This research predicts that 65 nm L/S pattern can be fabricated by current ArF dry lithography system.

  19. Inorganic immersion fluids for ultrahigh numerical aperture 193 nm lithography

    NASA Astrophysics Data System (ADS)

    Zhou, Jianming; Fan, Yongfa; Bourov, Anatoly; Smith, Bruce W.

    2006-05-01

    Immersion lithography has become attractive since it can reduce critical dimensions by increasing numerical aperture (NA) beyond unity. Among all the candidates for immersion fluids, those with higher refractive indices and low absorbance are desired. Characterization of the refractive indices and absorbance of various inorganic fluid candidates has been performed. To measure the refractive indices of these fluids, a prism deviation angle method was developed. Several candidates have been identified for 193 nm application with refractive indices near 1.55, which is approximately 0.1 higher than that of water at this wavelength. Cauchy parameters of these fluids were generated and approaches were investigated to tailor the fluid absorption edges to be close to 193 nm. The effects of these fluids on photoresist performance were also examined with 193 nm immersion lithography exposure at various NAs. Half-pitch 32 nm lines were obtained with phosphoric acid as the immersion medium at 1.5 NA. These fluids are potential candidates for immersion lithography technology.

  20. Modular Polymer Biosensors by Solvent Immersion Imprint Lithography

    SciTech Connect

    Moore, Jayven S.; Xantheas, Sotiris S.; Grate, Jay W.; Wietsma, Thomas W.; Gratton, Enrico; Vasdekis, Andreas

    2016-01-01

    We recently demonstrated Solvent Immersion Imprint Lithography (SIIL), a rapid benchtop microsystem prototyping technique, including polymer functionalization, imprinting and bonding. Here, we focus on the realization of planar polymer sensors using SIIL through simple solvent immersion without imprinting. We describe SIIL’s impregnation characteristics, including an inherent mechanism that not only achieves practical doping concentrations, but their unexpected 4-fold enhancement compared to the immersion solution. Subsequently, we developed and characterized optical sensors for detecting molecular O2. To this end, a high dynamic range is reported, including its control through the immersion duration, a manifestation of SIIL’s modularity. Overall, SIIL exhibits the potential of improving the operating characteristics of polymer sensors, while significantly accelerating their prototyping, as it requires a few seconds of processing and no need for substrates or dedicated instrumentation. These are critical for O2 sensing as probed by way of example here, as well as any polymer permeable reactant.

  1. Nanocomposite liquids for 193 nm immersion lithography: a progress report

    NASA Astrophysics Data System (ADS)

    Chumanov, George; Evanoff, David D., Jr.; Luzinov, Igor; Klep, Viktor; Zdryko, Bogdan; Conley, Will; Zimmerman, Paul

    2005-05-01

    Immersion lithography is a new promising approach capable of further increasing the resolution of semiconductor devices. This technology requires the development of new immersion media that satisfy the following conditions: the media should have high refractive index, be transparent and photochemically stable in DUV spectral range. They should also be inert towards photoresists and optics and be liquid to permit rapid scanning. Here we propose and explore a novel strategy in which high refractive index medium is made of small solid particles suspended in liquid phases (nanocomposite liquids). The dielectric particles have high refractive index and the refractive index of nanocomposite liquids becomes volume weighted average between refractive indices of nanoparticles and the liquid phase. We investigate aluminum oxide (alumina) nanoparticles suspended in water. Alumina is known to have high (1.95) refractive index and low absorption coefficient at 193 nm. Alumina nanoparticles were prepared by chemical methods followed by removal of organic molecules left after hydrolysis reactions. Measurements of optical and reological properties of the nanocomposite liquid demonstrated potential advantage of this approach for 193 nm immersion lithography.

  2. 32 nm logic patterning options with immersion lithography

    NASA Astrophysics Data System (ADS)

    Lai, K.; Burns, S.; Halle, S.; Zhuang, L.; Colburn, M.; Allen, S.; Babcock, C.; Baum, Z.; Burkhardt, M.; Dai, V.; Dunn, D.; Geiss, E.; Haffner, H.; Han, G.; Lawson, P.; Mansfield, S.; Meiring, J.; Morgenfeld, B.; Tabery, C.; Zou, Y.; Sarma, C.; Tsou, L.; Yan, W.; Zhuang, H.; Gil, D.; Medeiros, D.

    2008-03-01

    The semiconductor industry faces a lithographic scaling limit as the industry completes the transition to 1.35 NA immersion lithography. Both high-index immersion lithography and EUV lithography are facing technical challenges and commercial timing issues. Consequently, the industry has focused on enabling double patterning technology (DPT) as a means to circumvent the limitations of Rayleigh scaling. Here, the IBM development alliance demonstrate a series of double patterning solutions that enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through innovative processes. These techniques have been successfully employed for early 32nm node development using 45nm generation tooling. Four different double patterning techniques were implemented. The first process illustrates local RET optimization through the use of a split reticle design. In this approach, a layout is decomposed into a series of regions with similar imaging properties and the illumination conditions for each are independently optimized. These regions are then printed separately into the same resist film in a multiple exposure process. The result is a singly developed pattern that could not be printed with a single illumination-mask combination. The second approach addresses 2D imaging with particular focus on both line-end dimension and linewidth control [1]. A double exposure-double etch (DE2) approach is used in conjunction with a pitch-filling sacrificial feature strategy. The third double exposure process, optimized for via patterns also utilizes DE2. In this method, a design is split between two separate masks such that the minimum pitch between any two vias is larger than the minimum metal pitch. This allows for final structures with vias at pitches beyond the capability of a single exposure. In the fourth method,, dark field double dipole lithography (DDL) has been successfully applied to BEOL metal structures and has been shown to be

  3. Novel high refractive index fluids for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Santillan, Julius; Otoguro, Akihiko; Itani, Toshiro; Fujii, Kiyoshi; Kagayama, Akifumi; Nakano, Takashi; Nakayama, Norio; Tamatani, Hiroaki; Fukuda, Shin

    2006-03-01

    Despite the early skepticism towards the use of 193-nm immersion lithography as the next step in satisfying Moore's law, it continuous to meet expectations on its feasibility in achieving 65-nm nodes and possibly beyond. And with implementation underway, interest in extending its capability for smaller pattern sizes such as the 32-nm node continues to grow. In this paper, we will discuss the optical, physical and lithographic properties of newly developed high index fluids of low absorption coefficient, 'Babylon' and 'Delphi'. As evaluated in a spectroscopic ellipsometer in the 193.39nm wavelength, the 'Babylon' and 'Delphi' high index fluids were evaluated to have a refractive index of 1.64 and 1.63 with an absorption coefficient of 0.05/cm and 0.08/cm, respectively. Lithographic evaluation results using a 193-nm 2-beam interferometric exposure tool show the imaging capability of both high index fluids to be 32-nm half pitch lines and spaces.

  4. Solvent immersion nanoimprint lithography of fluorescent conjugated polymers

    SciTech Connect

    Whitworth, G. L.; Zhang, S.; Stevenson, J. R. Y.; Ebenhoch, B.; Samuel, I. D. W.; Turnbull, G. A.

    2015-10-19

    Solvent immersion imprint lithography (SIIL) was used to directly nanostructure conjugated polymer films. The technique was used to create light-emitting diffractive optical elements and organic semiconductor lasers. Gratings with lateral features as small as 70 nm and depths of ∼25 nm were achieved in poly(9,9-dioctylfluorenyl-2,7-diyl). The angular emission from the patterned films was studied, comparing measurement to theoretical predictions. Organic distributed feedback lasers fabricated with SIIL exhibited thresholds for lasing of ∼40 kW/cm{sup 2}, similar to those made with established nanoimprint processes. The results show that SIIL is a quick, convenient and practical technique for nanopatterning of polymer photonic devices.

  5. High-index optical materials for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Burnett, John H.; Kaplan, Simon G.; Shirley, Eric L.; Horowitz, Deane; Clauss, Wilfried; Grenville, Andrew; Van Peski, Chris

    2006-03-01

    We report on our comprehensive survey of high-index UV optical materials that may enable extension of immersion lithography beyond a numerical aperture of 1.45. Band edge, refractive index, and intrinsic birefringence (IBR) at 193 nm determine basic viability. Our measurements of these properties have reduced the list of potential candidates to: ceramic spinel, lutetium aluminum garnet, and a class of germanium garnets. We discuss our measurements of the intrinsic properties of these materials and assess the present status of their material quality relative to requirements. Ceramic spinel has no significant IBR, but transmission and scatter for the best samples remain at least two orders of magnitude from specifications. Improving these would require a major development effort. Presently available lutetium aluminum garnet has material quality much closer to the specifications. However, the IBR is about three times the required value. The germanium garnets offer the possibility of a lower IBR, but a suitable candidate material has yet to be established.

  6. Immersion defectivity study with volume production immersion lithography tool for 45 nm node and below

    NASA Astrophysics Data System (ADS)

    Nakano, Katsushi; Nagaoka, Shiro; Yoshida, Masato; Iriuchijima, Yasuhiro; Fujiwara, Tomoharu; Shiraishi, Kenichi; Owa, Soichi

    2008-03-01

    Volume production of 45nm node devices utilizing Nikon's S610C immersion lithography tool has started. Important to the success in achieving high-yields in volume production with immersion lithography has been defectivity reduction. In this study we evaluate several methods of defectivity reduction. The tools used in our defectivity analysis included a dedicated immersion cluster tools consisting of a Nikon S610C, a volume production immersion exposure tool with NA of 1.3, and a resist coater-developer LITHIUS i+ from TEL. In our initial procedure we evaluated defectivity behavior by comparing on a topcoat-less resist process to a conventional topcoat process. Because of its simplicity the topcoatless resist shows lower defect levels than the topcoat process. In a second study we evaluated the defect reduction by introducing the TEL bevel rinse and pre-immersion bevel cleaning techniques. This technique was shown to successfully reduce the defect levels by reducing the particles at the wafer bevel region. For the third defect reduction method, two types of tool cleaning processes are shown. Finally, we discuss the overall defectivity behavior at the 45nm node. To facilitate an understanding of the root cause of the defects, defect source analysis (DSA) was applied to separate the defects into three classes according to the source of defects. DSA analysis revealed that more than 99% of defects relate to material and process, and less than 1% of the defects relate to the exposure tool. Material and process optimization by collaborative work between exposure tool vendors, track vendors and material vendors is a key for success of 45nm node device manufacturing.

  7. A method for compensating the polarization aberration of projection optics in immersion lithography

    NASA Astrophysics Data System (ADS)

    Jia, Yue; Li, Yanqiu; Liu, Lihui; Han, Chunying; Liu, Xiaolin

    2014-08-01

    As the numerical aperture (NA) of 193nm immersion lithography projection optics (PO) increasing, polarization aberration (PA) leads to image quality degradation seriously. PA induced by large incident angle of light, film coatings and intrinsic birefringence of lens materials cannot be ignored. An effective method for PA compensation is to adjust lens position in PO. However, this method is complicated. Therefore, in this paper, an easy and feasible PA compensation method is proposed: for ArF lithographic PO with hyper NA (NA=1.2), which is designed by our laboratory, the PA-induced critical dimension error (CDE) can be effectively reduced by optimizing illumination source partial coherent factor σout. In addition, the basic idea of our method to suppress pattern placement error (PE) is to adopt anti-reflection (AR) multi-layers MgF2/LaF3/MgF2 and calcium fluoride CaF2 of [111] crystal axes. Our simulation results reveal that the proposed method can effectively and quantificationally compensate large PA in the optics. In particular, our method suppresses the dynamic range of CDE from -12.7nm ~ +4.3nm to -1.1nm ~ +1.2nm, while keeping PE at an acceptable level.

  8. High performance Si immersion gratings patterned with electron beam lithography

    NASA Astrophysics Data System (ADS)

    Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

    2014-07-01

    Infrared spectrographs employing silicon immersion gratings can be significantly more compact than spectro- graphs using front-surface gratings. The Si gratings can also offer continuous wavelength coverage at high spectral resolution. The grooves in Si gratings are made with semiconductor lithography techniques, to date almost entirely using contact mask photolithography. Planned near-infrared astronomical spectrographs require either finer groove pitches or higher positional accuracy than standard UV contact mask photolithography can reach. A collaboration between the University of Texas at Austin Silicon Diffractive Optics Group and the Jet Propulsion Laboratory Microdevices Laboratory has experimented with direct writing silicon immersion grating grooves with electron beam lithography. The patterning process involves depositing positive e-beam resist on 1 to 30 mm thick, 100 mm diameter monolithic crystalline silicon substrates. We then use the facility JEOL 9300FS e-beam writer at JPL to produce the linear pattern that defines the gratings. There are three key challenges to produce high-performance e-beam written silicon immersion gratings. (1) E- beam field and subfield stitching boundaries cause periodic cross-hatch structures along the grating grooves. The structures manifest themselves as spectral and spatial dimension ghosts in the diffraction limited point spread function (PSF) of the diffraction grating. In this paper, we show that the effects of e-beam field boundaries must be mitigated. We have significantly reduced ghost power with only minor increases in write time by using four or more field sizes of less than 500 μm. (2) The finite e-beam stage drift and run-out error cause large-scale structure in the wavefront error. We deal with this problem by applying a mark detection loop to check for and correct out minuscule stage drifts. We measure the level and direction of stage drift and show that mark detection reduces peak-to-valley wavefront error

  9. ArF processing of 90-nm design rule lithography achieved through enhanced thermal processing

    NASA Astrophysics Data System (ADS)

    Kagerer, Markus; Miller, Daniel; Chang, Wayne; Williams, Daniel J.

    2006-03-01

    As the lithography community has moved to ArF processing on 300 mm wafers for 90 nm design rules the process characterization of the components of variance continues to highlight the thermal requirements for the post exposure bake (PEB) processing step. In particular as the thermal systems have become increasingly uniform, the transient behavior of the thermal processing system has received the focus of attention. This paper demonstrates how a newly designed and patented thermal processing system was optimized for delivering improved thermal uniformity during a typical 90 second PEB processing cycle, rather than being optimized for steady state performance. This was accomplished with the aid of a wireless temperature measurement wafer system for obtaining real time temperature data and by using a response surface model (RSM) experimental design for optimizing parameters of the temperature controller of the thermal processing system. The new units were field retrofitted seamlessly in <2 days at customer sites without disruption to process recipes or flows. After evaluating certain resist parameters such as PEB temperature sensitivity and post exposure delay (PED) - stability of the baseline process, the new units were benchmarked against the previous PEB plates by processing a split lot experiment. Additional hardware characterization included environmental factors such as air velocity in the vicinity of the PEB plates and transient time between PEB and chill plate. At the completion of the optimization process, the within wafer CD uniformity displayed a significant improvement when compared to the previous hardware. The demonstrated within wafer CD uniformity improved by 27% compared to the initial hardware and baseline process. ITRS requirements for the 90 nm node were exceeded.

  10. Low leaching and low LWR photoresist development for 193 nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Ando, Nobuo; Lee, Youngjoon; Miyagawa, Takayuki; Edamatsu, Kunishige; Takemoto, Ichiki; Yamamoto, Satoshi; Tsuchida, Yoshinobu; Yamamoto, Keiko; Konishi, Shinji; Nakano, Katsushi; Tomoharu, Fujiwara

    2006-03-01

    With no apparent showstopper in sight, the adoption of ArF immersion technology into device mass production is not a matter of 'if' but a matter of 'when'. As the technology matures at an unprecedented speed, many of initial technical difficulties have been cleared away and the use of a protective layer known as top coat, initially regarded as a must, now becomes optional, for example. Our focus of interest has also sifted to more practical and production related issues such as defect reducing and performance enhancement. Two major types of immersion specific defects, bubbles and a large number of microbridges, were observed and reported elsewhere. The bubble defects seem to decrease by improvement of exposure tool. But the other type defect - probably from residual water spots - is still a problem. We suspect that the acid leaching from resist film causes microbridges. When small water spots were remained on resist surface after exposure, acid catalyst in resist film is leaching into the water spots even though at room temperature. After water from the spot is dried up, acid molecules are condensed at resist film surface. As a result, in the bulk of resist film, acid depletion region is generated underneath the water spot. Acid catalyzed deprotection reaction is not completed at this acid shortage region later in the PEB process resulting in microbridge type defect formation. Similar mechanism was suggested by Kanna et al, they suggested the water evaporation on PEB plate. This hypothesis led us to focus on reducing acid leaching to decrease residual water spot-related defect. This paper reports our leaching measurement results and low leaching photoresist materials satisfying the current leaching requirements outlined by tool makers without topcoat layer. On the other hand, Nakano et al reported that the higher receding contact angle reduced defectivity. The higher receding contact angle is also a key item to increase scan speed. The effort to increase the

  11. Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners

    NASA Astrophysics Data System (ADS)

    Toki, Tsuyoshi; Izikson, Pavel; Kosugi, Junichi; Sakasai, Naruo; Saotome, Keiko; Suzuki, Kazuaki; Kandel, Daniel; Robinson, John C.; Koyanagi, Yuji

    2010-04-01

    We have developed a new scheme of process control combining a CD metrology system and an exposure tool. A new model based on Neural Networks has been created in KLA-Tencor's "KT Analyzer" which calculates the dose and focus errors simultaneously from CD parameters, such as mid CD and height information, measured by a scatterometry (OCD) measurement tool. The accuracy of this new model was confirmed by experiment. Nikon's "CDU master" then calculated the control parameters for dose and focus per each field from the dose and focus error data of a reference wafer provided by KT Analyzer. Using the corrected parameters for dose and focus from CDU master, we exposed wafers on an NSR-S610C (ArF immersion scanner), and measured the CDU on a KLA SCD100 (OCD tool). As a result, we confirmed that CDU in the entire wafer can be improved more than 60% (from 3.36nm (3σ) to 1.28nm (3σ)).

  12. Extending immersion lithography with high-index materials: results of a feasibility study

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; Mulkens, Jan; Graeupner, Paul; McCafferty, Diane; Markoya, Louis; Donders, Sjoerd; Samarakone, Nandasiri; Duesing, Rudiger

    2007-03-01

    In this paper we report the status of our feasibility work on high index immersion. The development of high index fluids (n>1.64) and high index glass materials (n>1.9) is reported. Questions answered are related to the design of a high NA optics immersion system for fluid containment and fluid handling, and to the compatibility of the fluid with ArF resist processes. Optical design and manufacturing challenges are related to the use of high index glass materials such as crystalline LuAG or ceramic Spinel. Progress on the material development will be reviewed. Progress on immersion fluids development has been sustained. Second-generation fluids are available from many suppliers. For the practical use of second-generation fluids in immersion scanners, we have evaluated and tested fluid recycling concepts in combination with ArF radiation of the fluids. Results on the stability of the fluid and the fluid glass interface will be reported. Fluid containment with immersion hood structures under the lens has been evaluated and tested for several scan speeds and various fluids. Experimental results on scan speed limitations will be presented. The application part of the feasibility study includes the imaging of 29nm L/S structures on a 2-beam interference printer, fluid/resist interaction testing with pre- and post-soak testing. Immersion defect testing using a fluid misting setup was also carried out. Results of these application-related experiments will be presented and discussed.

  13. Defectivity reduction by optimization of 193-nm immersion lithography using an interfaced exposure-track system

    NASA Astrophysics Data System (ADS)

    Carcasi, Michael; Hatakeyama, Shinichi; Nafus, Kathleen; Moerman, Richard; van Dommelen, Youri; Huisman, Peter; Hooge, Joshua; Scheer, Steven; Foubert, Philippe

    2006-03-01

    As the integration of semiconductor devices continues, pattern sizes required in lithography get smaller and smaller. To achieve even more scaling down of these patterns without changing the basic infrastructure technology of current cutting-edge 193-nm lithography, 193-nm immersion lithography is being viewed as a powerful technique that can accommodate next-generation mass productions needs. Therefore this technology has been seriously considered and after proof of concept it is currently entering the stage of practical application. In the case of 193-nm immersion lithography, however, because liquid fills the area between the projection optics and the silicon wafer, several causes of concern have been raised - namely, diffusion of moisture into the resist film due to direct resist-water interaction during exposure, dissolution of internal components of the resist into the de-ionized water, and the influence of residual moisture generated during exposure on post-exposure processing. To prevent these unwanted effects, optimization of the three main components of the lithography system: materials, track and scanner, is required. For the materials, 193nm resist formulation improvements specifically for immersion processing have reduced the leaching and the sensitivity to water related defects, further benefits can be seen by the application of protective top coat materials. For the track component, optimization of the processing conditions and immersion specific modules are proven to advance the progress made by the material suppliers. Finally, by optimizing conditions on the 3 rd generation immersion scanner with the latest hardware configuration, defectivity levels comparable to dry processing can be achieved. In this evaluation, we detail the improvements that can be realized with new immersion specific track rinse modules and formulate a hypothesis for the improvements seen with the rinsing process. Additionally, we show the current status of water induced

  14. Performance of immersion lithography for 45-nm-node CMOS and ultra-high density SRAM with 0.25um2

    NASA Astrophysics Data System (ADS)

    Mimotogi, Shoji; Uesawa, Fumikatsu; Tominaga, Makoto; Fujise, Hiroharu; Sho, Koutaro; Katsumata, Mikio; Hane, Hiroki; Ikegami, Atsushi; Nagahara, Seiji; Ema, Tatsuhiko; Asano, Masafumi; Kanai, Hideki; Kimura, Taiki; Iwai, Masaaki

    2007-03-01

    Immersion lithography was applied to 45nm node logic and 0.25um2 ultra-high density SRAM. The predictable enhancement of focus margin and resolution were obtained for all levels which were exposed by immersion tool. In particular, the immersion lithography enabled to apply the attenuating phase shift mask to the gate level. The enough lithography margin for the alternating phase shift mask was also obtained by using not only immersion tool but also dry tool for gate level. The immersion lithography shrunk the minimum hole pitch from 160nm to 140nm. Thus, the design rule for 45nm node became available by using immersion lithography.

  15. Design and performance of photoresist materials for ArF lithography

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Woo; Jung, Dong-Won; Lee, Sook; Choi, Sang-Jun; Woo, Sang-Gyun; Kavanagh, Robert J.; Barclay, George G.; Blacksmith, Robert F.; Kang, Doris; Pohlers, Gerd; Cameron, James F.; Mattia, Joe; Caporale, Stefan; Penniman, Thomas; Joesten, Lori A.; Thackeray, James W.

    2001-08-01

    In this paper we review the design and performance of ArF resists developed from various polymer platforms. Inadequate etch performance of early ArF acrylate platforms necessitated the development of new etch resistant platforms, in terms of both etch rate and etch uniformity. Two resist platforms were developed to address etch resistance: 1) alternating copolymers of cyclic olefins and maleic anhydride (COMA); and 2) polycycloolefin polymers (CO). Improvements have been made in the imaging performance of these resists, such that they now approach the lithographic performance of acrylate based resists. Recently, a third platform based on polymerization of vinyl ethers with maleic anhydride (VEMA), which has excellent etch performance, was developed by Samsung. Here we will focus our discussion on acrylate, COMA and VEMA based resists.

  16. Directed Self Assembly (DSA) compliant flow with immersion lithography: from material to design and patterning

    NASA Astrophysics Data System (ADS)

    Ma, Yuansheng; Wang, Yan; Word, James; Lei, Junjiang; Mitra, Joydeep; Torres, J. Andres; Hong, Le; Fenger, Germain; Khaira, Daman; Preil, Moshe; Yuan, Lei; Kye, Jongwook; Levinson, Harry J.

    2016-03-01

    In this paper, we present a DSA compliant flow for contact/via layers with immersion lithography assuming the grapho-epitaxy process for cylinders' formation. We demonstrate that the DSA technology enablement needs co-optimization among material, design, and lithography. We show that the number of DSA grouping constructs is countable for the gridded-design architecture. We use Template Error Enhancement Factor (TEEF) to choose DSA material, determine grouping design rules, and select the optimum guiding patterns. Our post-pxOPC imaging data shows that it is promising to achieve 2-mask solution with DSA for the contact/via layer using 193i at 5nm node.

  17. New ArF immersion light source introduces technologies for high-volume 14nm manufacturing and beyond

    NASA Astrophysics Data System (ADS)

    Cacouris, T.; Conley, W.; Thornes, J.; Bibby, T.; Melchior, J.; Aggarwal, T.; Gross, E.

    2015-03-01

    Semiconductor market demand for improved performance at lower cost continues to drive enhancements in excimer light source technologies. Multi-patterning lithography solutions to extend deep-UV (DUV) immersion have driven requirements such as higher throughput and higher efficiencies to maximize the utilization of leading-edge lithography equipment. Three key light source parameters have direct influence on patterning performance - energy, wavelength and bandwidth stability - and they have been the primary areas of continuous improvement. With 14nm node development, a number of studies have shown the direct influence of bandwidth stability on CD uniformity for certain patterns and geometries, leading to the desire for further improvements in this area. More recent studies also examined the impact of bandwidth on 10nm logic node patterning [1]. Alongside these drivers, increasing cost per patterning layer continues to demand further improvements in operating costs and efficiencies from the lithography tools, and the light source can offer further gains in these areas as well. This paper introduces several light source technologies that are embodied in a next-generation light source, the Cymer XLR® 700ix, which is an extension of the ring laser architecture introduced 8 years ago. These technologies enable a significant improvement in bandwidth stability as well as notable reductions in operating costs through more efficient gas management algorithms and lower facilities costs.

  18. Polarization aberration compensation method by adjusting illumination partial coherent factors in immersion lithography

    NASA Astrophysics Data System (ADS)

    Jia, Yue; Li, Yanqiu; Liu, Lihui; Han, Chunying; Liu, Xiaolin

    2014-11-01

    As the numerical aperture (NA) increasing and process factor k1 decreasing in 193nm immersion lithography, polarization aberration (PA) of projection optics leads to image quality degradation seriously. Therefore, this work proposes a new scheme for compensating polarization aberration. By simulating we found that adjusting the illumination source partial coherent factors σout is an effective method for decreasing the PA induced pattern critical dimension (CD) error while keeping placement error (PE) within an acceptable range. Our simulation results reveal that the proposed method can effectively compensate large PA in actual optics.

  19. 193nm immersion lithography for high-performance silicon photonic circuits

    NASA Astrophysics Data System (ADS)

    Selvaraja, Shankar K.; Winroth, Gustaf; Locorotondo, Sabrina; Murdoch, Gayle; Milenin, Alexey; Delvaux, Christie; Ong, Patrick; Pathak, Shibnath; Xie, Weiqiang; Sterckx, Gunther; Lepage, Guy; Van Thourhout, Dries; Bogaerts, Wim; Van Campenhout, Joris; Absil, Philippe

    2014-04-01

    Large-scale photonics integration has been proposed for many years to support the ever increasing requirements for long and short distance communications as well as package-to-package interconnects. Amongst the various technology options, silicon photonics has imposed itself as a promising candidate, relying on CMOS fabrication processes. While silicon photonics can share the technology platform developed for advanced CMOS devices it has specific dimension control requirements. Though the device dimensions are in the order of the wavelength of light used, the tolerance allowed can be less than 1% for certain devices. Achieving this is a challenging task which requires advanced patterning techniques along with process control. Another challenge is identifying an overlapping process window for diverse pattern densities and orientations on a single layer. In this paper, we present key technology challenges faced when using optical lithography for silicon photonics and advantages of using the 193nm immersion lithography system. We report successful demonstration of a modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology. By careful process design, within-wafer CD variation (1sigma) of <1% is achieved for both isolated (waveguides) and dense (grating) patterns in silicon. In addition to dimensional control, low sidewall roughness is a crucial to achieve low scattering loss in the waveguides. With this platform, optical propagation loss as low as ~0.7 dB/cm is achieved for high-confinement single mode waveguides (450x220nm). This is an improvement of >20 % from the best propagation loss reported for this cross-section fabricated using e-beam lithography. By using a single-mode low-confinement waveguide geometry the loss is further reduced to ~0.12 dB/cm. Secondly, we present improvement in within-device phase error in wavelength selective devices, a critical parameter which is a direct measure of line

  20. Point-of-use filtration strategy for negative tone developer in extended immersion and extreme-ultraviolet (EUV) lithography

    NASA Astrophysics Data System (ADS)

    D'Urzo, L.; Foubert, P.; Stokes, H.; Thouroude, Y.; Xia, A.; Wu, Aiwen

    2015-03-01

    Negative tone development (NTD) has dramatically gained popularity in 193 nm dry and immersion lithography, due to their superior imaging performance [1, 2 and 3]. Popular negative tone developers are organic solvents such as n- butyl acetate (n-BA), aliphatic ketones, or high-density alcohols such as Methyl Isobutyl Carbinol (MIBC). In this work, a comparative study between ultra-high molecular weight polyethylene (UPE) and polytetrafluoroethylene (PTFE) POU filtration for n-BA based NTD has been carried out. Results correlate with the occurrence or the mitigation of micro bridges in a 45 nm dense line pattern created through immersion lithography as a function of POU membrane.

  1. Developing an integrated imaging system for the 70-nm node using high numerical aperture ArF lithography

    NASA Astrophysics Data System (ADS)

    Petersen, John S.; Beach, James V.; Gerold, David J.; Maslow, Mark J.

    2002-07-01

    At its conception, 193 nm lithography was thought to be the best way to take optical lithography to the 180 nm node. It was expected that 193 nm could support the now-defunct 160 nm node before optical lithography would have to yield to an undetermined non-optical solution. Today, 193 nm must compete with 248 nm for the 130 nm node and is expected to support lithography until it is replaced by 157 nm at the 70 nm node. Given the challenges facing 157 nm, it is likely that lithographers will attempt to extend the utility of 193 nm to its theoretical limits.

  2. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications

    NASA Astrophysics Data System (ADS)

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I.; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.69), which enables efficient light focusing even inside other media such as water or adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping and fiber probes.

  3. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications.

    PubMed

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter, we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.68), which enables efficient light focusing even inside other media, such as water or an adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping, and fiber probes. PMID:27472584

  4. Birefringence issues with uniaxial crystals as last lens elements for high-index immersion lithography

    NASA Astrophysics Data System (ADS)

    Burnett, John H.; Benck, Eric C.; Kaplan, Simon G.; Sirat, Gabriel Y.; Mack, Chris

    2009-03-01

    We discuss the birefringence issues associated with use of crystalline sapphire, with uniaxial crystal structure, as a last lens element for high-index 193 nm immersion lithography. Sapphire is a credible high-index lens material candidate because with appropriate orientation and TE polarization the ordinary ray exhibits the required isotropic optical properties. Also, its material properties may give it higher potential to meet the stringent optical requirements compared to the potential of the principal candidate materials, cubic-symmetry LuAG and ceramic spinel. The TE polarization restriction is required anyway for hyper-NA imaging, due to TM-polarization contrast degradation effects. Further, the high uniaxial-structure birefringence of sapphire may offer the advantage that any residual TM polarization results in a relatively-uniform flare instead of contrast degradation. One issue with this concept is that spatial-dispersion-induced effects should cause some index anisotropy of the ordinary rays, in a way similar to the intrinsic birefringence (IBR) effects in cubic crystals, except that there is no ray splitting. We present the theory of this effect for the trigonal crystal structure of sapphire and discuss its implications for lithography optics. For this material the spatial-dispersion-induced effects are characterized by eight material parameters, of which three contribute to index anisotropy of the ordinary rays. Only one gives rise to azimuthal distortions, and may present challenges for correction. To assess the consequences of using sapphire as a last element, neglecting any IBR effects, we use lithography simulations to characterize the lithographic performance for a 1.7 NA design, and compare to that for LuAG.

  5. Solutions with precise prediction for thermal aberration error in low-k1 immersion lithography

    NASA Astrophysics Data System (ADS)

    Fukuhara, Kazuya; Mimotogi, Akiko; Kono, Takuya; Aoyama, Hajime; Ogata, Taro; Kita, Naonori; Matsuyama, Tomoyuki

    2013-04-01

    Thermal aberration becomes a serious problem in the production of semiconductors for which low-k1 immersion lithography with a strong off-axis illumination, such as dipole setting, is used. The illumination setting localizes energy of the light in the projection lens, bringing about localized temperature rise. The temperature change varies lens refractive index and thus generates aberrations. The phenomenon is called thermal aberration. For realizing manufacturability of fine patterns with high productivity, thermal aberration control is important. Since heating areas in the projection lens are determined by source shape and distribution of diffracted light by a mask, the diffracted pupilgram convolving illumination source shape with diffraction distribution can be calculated using mask layout data for the thermal aberration prediction. Thermal aberration is calculated as a function of accumulated irradiation power. We have evaluated the thermal aberration computational prediction and control technology "Thermal Aberration Optimizer" (ThAO) on a Nikon immersion system. The thermal aberration prediction consists of two steps. The first step is prediction of the diffraction map on the projection pupil. The second step is computing thermal aberration from the diffraction map using a lens thermal model and an aberration correction function. We performed a verification test for ThAO using a mask of 1x-nm memory and strong off-axis illumination. We clarified the current performance of thermal aberration prediction, and also confirmed that the impacts of thermal aberration of NSR-S621D on CD and overlay for our 1x-nm memory pattern are very small. Accurate thermal aberration prediction with ThAO will enable thermal aberration risk-free lithography for semiconductor chip production.

  6. Double-exposure strategy using OPC and simulation and the performance on wafer with sub-0.10-μm design rule in ArF lithography

    NASA Astrophysics Data System (ADS)

    Oh, Se-Young; Kim, Wan-Ho; Yune, Hyoung-Soon; Kim, Hee-Bom; Kim, Seo-Min; Ahn, Chang-Nam; Shin, Ki-Soo

    2002-07-01

    As the pattern size becomes smaller, double or multi exposure is required unless the epochal solutions for overcoming the limits of present lithography system do appear or are discovered. ArF DET (double exposure technology) strategy based on manual OPC with in-house simulation tool, HOST (Hynix OPC simulation tool), is suggested as a possible exposure method to extend the limitation of current lithography. HOST requires no additional procedures and separate layout optimizations of each region in terms of OPC are enough. Furthermore, it is possible to change illumination condition of each region and the overlap between two regions with ease. The results from the simulation are pattern size and profile of each condition according to the defous and misregistration. 0.63 NA ArF Scanner and Clariant resist is used for wafer process. The resist was coated on Clariant organic BARC using 0.24 um thickness. Dipole illumination for cell region and annular illumination for peripheral region are used. Cell region contains 0.20 um pitch duty pattern and peripheral region 0.24 um pitch duty pattern. The boundary of two regions is investigated in view of validity of stitching itself. The layout of reticles used as the cell and peripheral region are optimized by OPC, respectively and then, additional OPC was treated to the boundary, i.e., stitching area to compensate the cross term of the boundary caused by separate and independent optimization with OPC in the cell and the peripheral regime. The final patterns were acquired by defining the cell at first and the peripheral region secondly with different defocus and registration in respect to the cell. The actual data on wafer are presented according to defocus and one region's overlay offset relatively to the other region. And the outstanding matching between simulation results and in-line data are shown. Lithography process window for stable patterning is thoroughly investigated in view of depth of focus, energy latitude

  7. Towards ultimate optical lithography with NXT:1950i dual stage immersion platform

    NASA Astrophysics Data System (ADS)

    Castenmiller, Tom; van de Mast, Frank; de Kort, Toine; van de Vin, Coen; de Wit, Marten; Stegen, Raf; van Cleef, Stefan

    2010-04-01

    Optical lithography, currently being used for 45-nm semiconductor devices, is expected to be extended further towards the 32-nm and 22-nm node. A further increase of lens NA will not be possible but fortunately the shrink can be enabled with new resolution enhancement methods like source mask optimization (SMO) and double patterning techniques (DPT). These new applications lower the k1 dramatically and require very tight overlay control and CD control to be successful. In addition, overall cost per wafer needs to be lowered to make the production of semiconductor devices acceptable. For this ultimate era of optical lithography we have developed the next generation dual stage NXT:1950i immersion platform. This system delivers wafer throughput of 175 wafers per hour together with an overlay of 2.5nm. Several extensions are offered enabling 200 wafers per hour and improved imaging and on product overlay. The high productivity is achieved using a dual wafer stage with planar motor that enables a high acceleration and high scan speed. With the dual stage concept wafer metrology is performed in parallel with the wafer exposure. The free moving planar stage has reduced overhead during chuck exchange which also improves litho tool productivity. In general, overlay contributors are coming from the lithography system, the mask and the processing. Main contributors for the scanner system are thermal wafer and stage control, lens aberration control, stage positioning and alignment. The back-bone of the NXT:1950i enhanced overlay performance is the novel short beam fixed length encoder grid-plate positioning system. By eliminating the variable length interferometer system used in the previous generation scanners the sensitivity to thermal and flow disturbances are largely reduced. The alignment accuracy and the alignment sensitivity for process layers are improved with the SMASH alignment sensor. A high number of alignment marker pairs can be used without throughput loss, and

  8. SEM metrology for advanced lithographies

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin; Allgair, John; Rice, Bryan J.; Byers, Jeff; Avitan, Yohanan; Peltinov, Ram; Bar-zvi, Maayan; Adan, Ofer; Swyers, John; Shneck, Roni Z.

    2007-03-01

    For many years, lithographic resolution has been the main obstacle for keeping the pace of transistor densification to meet Moore's Law. The industry standard lithographic wavelength has evolved many times, from G-line to I-line, deep ultraviolet (DUV) based on KrF, and 193nm based on ArF. At each of these steps, new photoresist materials have been used. For the 45nm node and beyond, new lithography techniques are being considered, including immersion ArF lithography and extreme ultraviolet (EUV) lithography. As in the past, these techniques will use new types of photoresists with the capability of printing 45nm node (and beyond) feature widths and pitches. This paper will show results of an evaluation of the critical dimension-scanning electron microscopy (CD-SEM)-based metrology capabilities and limitations for the 193nm immersion and EUV lithography techniques that are suggested in the International Technology Roadmap for Semiconductors. In this study, we will print wafers with these emerging technologies and evaluate the performance of SEM-based metrology on these features. We will conclude with preliminary findings on the readiness of SEM metrology for these new challenges.

  9. Lithography imaging control by enhanced monitoring of light source performance

    NASA Astrophysics Data System (ADS)

    Alagna, Paolo; Zurita, Omar; Lalovic, Ivan; Seong, Nakgeuon; Rechsteiner, Gregory; Thornes, Joshua; D'havé, Koen; Van Look, Lieve; Bekaert, Joost

    2013-04-01

    Reducing lithography pattern variability has become a critical enabler of ArF immersion scaling and is required to ensure consistent lithography process yield for sub-30nm device technologies. As DUV multi-patterning requirements continue to shrink, it is imperative that all sources of lithography variability are controlled throughout the product life-cycle, from technology development to high volume manufacturing. Recent developments of new ArF light-source metrology and monitoring capabilities have been introduced in order to improve lithography patterning control.[1] These technologies enable performance monitoring of new light-source properties, relating to illumination stability, and enable new reporting and analysis of in-line performance.

  10. Determination of mask induced polarization effects occurring in hyper NA immersion lithography

    NASA Astrophysics Data System (ADS)

    Teuber, Silvio; Bubke, Karsten; Hollein, Ingo; Ziebold, Ralf; Peters, Jan H.

    2005-05-01

    As the lithographic projection technology of the future will require higher numerical aperture (NA) values, new physical effects will have to be taken into consideration. Immersion lithography will result in NA values of up to 1.2 and above. New optical effects like 3D shadowing, effects from oblique incident angles, mask-induced polarization of the transmitted light and birefringence from the substrate should be considered when the masks optical performance is evaluated. This paper addresses mask induced polarization effects from dense lines-and-space structures of standard production masks. On a binary and on an attenuated phase-shifting mask, which were manufactured at the Advanced Mask Technology Center (AMTC) transmission experimental investigations were performed. Measurements of diffraction efficiencies for TE- and TM-polarized light using three different incident angles are presented for all considered mask types and compared to simulations. The structures under investigation include line-space-pattern with varying pitches as well as varying duty cycles. Experimental results show good agreement with simulations.

  11. Study of barrier coats for application in immersion 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Houlihan, Francis; Kim, Wookyu; Sakamuri, Raj; Hamilton, Keino; Dimerli, Alla; Abdallah, David; Romano, Andrew; Dammel, Ralph R.; Pawlowski, Georg; Raub, Alex; Brueck, Steve

    2005-05-01

    We will describe our barrier coat approach for use in immersion 193 nm lithography. These barrier coats may act as either simple barriers providing protection against loss of resist components into water or in the case of one type of these formulations which have a refractive index at 193 nm which is the geometric mean between that of the resist and water provide, also top antireflective properties. Either type of barrier coat can be applied with a simple spinning process compatible with PGMEA based resin employing standard solvents such as alcohols and be removed during the usual resist development process with aqueous 0.26 N TMAH. We will discuss both imaging results with these materials on acrylate type 193 nm resists and also show some fundamental studies we have done to understand the function of the barrier coat and the role of differing spinning solvents and resins. We will show LS (55 nm) and Contact Hole (80 nm) resolved with a 193 nm resist exposed with the interferometric tool at the University of New Mexico (213 nm) with and without the use of a barrier coat.

  12. Charting CEBL's role in mainstream semiconductor lithography

    NASA Astrophysics Data System (ADS)

    Lam, David K.

    2013-09-01

    historically kept it out of mainstream fabs. Thanks to continuing EBDW advances combined with the industry's move to unidirectional (1D) gridded layout style, EBDW promises to cost-efficiently complement 193nm ArF immersion (193i) optical lithography in high volume manufacturing (HVM). Patterning conventional 2D design layouts with 193i is a major roadblock in device scaling: the resolution limitations of optical lithography equipment have led to higher mask cost and increased lithography complexity. To overcome the challenge, IC designers have used 1D layouts with "lines and cuts" in critical layers.1 Leading logic and memory chipmakers have been producing advanced designs with lines-and-cuts in HVM for several technology nodes in recent years. However, cut masks in multiple optical patterning are getting extremely costly. Borodovsky proposes Complementary Lithography in which another lithography technology is used to pattern line-cuts in critical layers to complement optical lithography.2 Complementary E-Beam Lithography (CEBL) is a candidate to pattern the Cuts of optically printed Lines. The concept of CEBL is gaining acceptance. However, challenges in throughput, scaling, and data preparation rate are threatening to deny CEBL's role in solving industry's lithography problem. This paper will examine the following issues: The challenges of massively parallel pixel writing The solutions of multiple mini-column design/architecture in: Boosting CEBL throughput Resolving issues of CD control, CDU, LER, data rate, higher resolution, and 450mm wafers The role of CEBL in next-generation solution of semiconductor lithography

  13. Programmed defects study on masks for 45nm immersion lithography using the novel AIMS 45-193i

    NASA Astrophysics Data System (ADS)

    Scherübl, Thomas; Dürr, Arndt C.; Böhm, Klaus; Birkner, Robert; Richter, Rigo; Strößner, Ulrich

    2007-02-01

    Mask manufacturing for the 45nm node for hyper NA lithography requires tight defect and printability control at small features sizes. The AIMS TM1 technology is a well established methodology to analyze printability of mask defects, repairs and critical features by scanner emulation. With the step towards hyper NA imaging by immersion lithography the AIMS TM technology has been faced with new challenges like vector effects, polarized illumination and tighter specs for repeatability and tool stability. These requirements pushed the development of an entirely new AIMS TM generation. The AIMS TM 45-193i has been designed and developed by Carl Zeiss to address these challenges. A new mechanical platform with a thermal and environmental control unit enables high tool stability. Thus a new class of specification becomes available. The 193nm optical beam path together with an improved beam homogenizer is dedicated to emulate scanners up to 1.4 NA. New features like polarized illumination and vector effect emulation make the AIMS TM 45- 193i a powerful tool for defect disposition and scanner emulation for 45nm immersion lithography. In this paper results from one of the first production tools will be presented. Aerial images from phase shifting and binary masks with different immersion relevant settings will be discussed. Also, data from a long term repeatability study performed on masks with programmed defects will be shown. This study demonstrates the tool's ability to perform defect disposition with high repeatability. It is found that the tool will fulfill the 45nm node requirements to perform mask qualification for production use.

  14. Massively-parallel FDTD simulations to address mask electromagnetic effects in hyper-NA immersion lithography

    NASA Astrophysics Data System (ADS)

    Tirapu Azpiroz, Jaione; Burr, Geoffrey W.; Rosenbluth, Alan E.; Hibbs, Michael

    2008-03-01

    In the Hyper-NA immersion lithography regime, the electromagnetic response of the reticle is known to deviate in a complicated manner from the idealized Thin-Mask-like behavior. Already, this is driving certain RET choices, such as the use of polarized illumination and the customization of reticle film stacks. Unfortunately, full 3-D electromagnetic mask simulations are computationally intensive. And while OPC-compatible mask electromagnetic field (EMF) models can offer a reasonable tradeoff between speed and accuracy for full-chip OPC applications, full understanding of these complex physical effects demands higher accuracy. Our paper describes recent advances in leveraging High Performance Computing as a critical step towards lithographic modeling of the full manufacturing process. In this paper, highly accurate full 3-D electromagnetic simulation of very large mask layouts are conducted in parallel with reasonable turnaround time, using a Blue- Gene/L supercomputer and a Finite-Difference Time-Domain (FDTD) code developed internally within IBM. A 3-D simulation of a large 2-D layout spanning 5μm×5μm at the wafer plane (and thus (20μm×20μm×0.5μm at the mask) results in a simulation with roughly 12.5GB of memory (grid size of 10nm at the mask, single-precision computation, about 30 bytes/grid point). FDTD is flexible and easily parallelizable to enable full simulations of such large layout in approximately an hour using one BlueGene/L "midplane" containing 512 dual-processor nodes with 256MB of memory per processor. Our scaling studies on BlueGene/L demonstrate that simulations up to 100μm × 100μm at the mask can be computed in a few hours. Finally, we will show that the use of a subcell technique permits accurate simulation of features smaller than the grid discretization, thus improving on the tradeoff between computational complexity and simulation accuracy. We demonstrate the correlation of the real and quadrature components that comprise the

  15. Simultaneous fluorescence and breakdown spectroscopy of fresh and aging transformer oil immersed in paper using ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Parvin, P.; Shoursheini, S. Z.; Khalilinejad, F.; Bavali, A.; Moshgel Gosha, M.; Mansouri, B.

    2012-11-01

    HV transformers are taken into account as the heart of the power distribution system. The on-line monitoring based on the oil analysis offers a rapid diagnostic technique to detect the probable faults. In fact, the transformer malfunctions can be detected using UV laser spectroscopic methods. Here, a novel technique is presented based on simultaneous laser induced fluorescence (LIF) and laser induced breakdown (LIB) spectroscopy for hyper sensitive identification of the oil degradation. Oil is mainly degraded due to the internal transformer faults such as overheating and partial discharge. The spectroscopic characteristics of oil in paper substrate were obtained due to ArF laser irradiation. It was shown that the amplitude of fluorescence signal increases when the oil suffers aging and degradation. A couple of additional characteristic carbon and Hα emissions appear in the corresponding breakdown spectra too.

  16. High hydrophobic topcoat approach for high volume production and yield enhancement of immersion lithography

    NASA Astrophysics Data System (ADS)

    Sagawa, Natsuko; Nakano, Katsushi; Ishii, Yuuki; Kusabiraki, Kazunori; Shima, Motoyuki

    2012-03-01

    Immersion scanner performance is being improved generation by generation. Faster scan speed is required to increase scanner productivity. There are, however, several papers reporting defect increase with higher scan speed1, 2, 3. To overcome this challenge, both material and immersion scanner requires special tuning and optimization. This high stage speed is possible by employing topcoats that have higher hydrophobicity. In general, blob defect are generated at a higher rate with increase in hydrophobicity of topcoat. Nikon and JSR have collaborated to address this challenge by using next generation scanner and a newly developed topcoat material, respectively. JSR, as a topcoat supplier, introduces a new topcoat (TCX279), which shows low blob defects even with very high hydrophobicity. Nikon's latest immersion scanner S621D, equipped with latest nozzle design for optimizing immersion water flow, and an improved tandem stage system to reduce edge particles, resulted in achieving 5x defect reduction compared to S620D. Ultimately, zero immersion defects were realized by a combination of Nikon's S621D scanner and JSR's new topcoat, TCX279.

  17. ITRS lithography roadmap: status and challenges

    NASA Astrophysics Data System (ADS)

    Neisser, Mark; Wurm, Stefan

    2012-09-01

    Recent ITRS lithography roadmaps show a big technology decision approaching the semiconductor industry about how to do leading edge lithography. The need is rapidly approaching for the industry to select an option for the 22-nm half pitch, but no decision has been made yet. The main options for the 22-nm half pitch are extreme ultraviolet (EUV), ArF immersion lithography with multiple patterning, and maskless lithography. For the 16-nm half pitch, directed self-assembly (DSA) is also an option. The EUV has the most industry investment and is the closest to current lithography in the way it works but still faces challenges in tool productivity and defect-free masks. The nanoimprint needs to overcome the defect, contamination, and overlay challenges before it can be applied to the semiconductor production. Maskless lithography may be used first for prototyping and small volume products where mask costs per chip produced would be very high. Double patterning could be extended to multiple pattering, but would give tremendous process complexity and exponentially rising mask costs due to the many exposures needed per level. The DSA, which only recently has emerged from the research stage, has the potential for very high resolution but represents a huge change in how critical dimensions are formed and controlled.

  18. Using scanning electrochemical microscopy to probe chemistry at the solid-liquid interface in chemically amplified immersion lithography

    NASA Astrophysics Data System (ADS)

    LeSuer, Robert J.; Fan, Fu-Ren F.; Bard, Allen J.; Taylor, J. Christopher; Tsiartas, Pavlos; Willson, Grant; Conley, Willard E.; Feit, Gene; Kunz, Roderick R.

    2004-05-01

    Three modes of scanning electrochemical microscopy (SECM) - voltammetry, pH, and conductivity - have been used to better understand the chemistry at, and diffusion through, the solid/liquid interface formed between a resist film and water in 193 nm immersion lithography. Emphasis has been placed on investigating the photoacid generator (PAG), triphenylsulfonium perfluorobutanesulfonate, and the corresponding photoacid. The reduction of triphenylsulfonium at a hemispherical Hg microelectrode was monitored using square wave voltammetry to detect trace amounts of the PAG leaching from the surface. pH measurements at a 100 μm diameter Sb microelectrode show the formation of acid in the water layer above a resist upon exposure with UV irradiation. Bipolar conductance measurements at a 100 μm Pt tip positioned 100 μm from the surface indicate that the conductivity of the solution during illumination is dependent upon the percentage of PAG in the film. Liquid chromatography mass spectrometric analysis of water samples in contact with resist films has been used to quantify the amounts (< 10 ng/cm2) of PAG leaching from the film in the dark which occurs within the first 30 seconds of contact time. Washing the film removes approximately 80% of the total leachable PAG.

  19. Experimental demonstration of line-width modulation in plasmonic lithography using a solid immersion lens-based active nano-gap control

    SciTech Connect

    Lee, Won-Sup; Kim, Taeseob; Choi, Guk-Jong; Lim, Geon; Joe, Hang-Eun; Gang, Myeong-Gu; Min, Byung-Kwon; Park, No-Cheol; Moon, Hyungbae; Kim, Do-Hyung; Park, Young-Pil

    2015-02-02

    Plasmonic lithography has been used in nanofabrication because of its utility beyond the diffraction limit. The resolution of plasmonic lithography depends on the nano-gap between the nanoaperture and the photoresist surface—changing the gap distance can modulate the line-width of the pattern. In this letter, we demonstrate solid-immersion lens based active non-contact plasmonic lithography, applying a range of gap conditions to modulate the line-width of the pattern. Using a solid-immersion lens-based near-field control system, the nano-gap between the exit surface of the nanoaperture and the media can be actively modulated and maintained to within a few nanometers. The line-widths of the recorded patterns using 15- and 5-nm gaps were 47 and 19.5 nm, respectively, which matched closely the calculated full-width at half-maximum. From these results, we conclude that changing the nano-gap within a solid-immersion lens-based plasmonic head results in varying line-width patterns.

  20. Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jong-doo; Choi, Jae-young; Kim, Jea-hee; Han, Jae-won

    2008-10-01

    As devices size move toward 90nm technology node or below, defining uniform bit line CD of flash devices is one of the most challenging features to print in KrF lithography. There are two principal difficulties in defining bit line on wafer. One is insufficient process margin besides poor resolution compared with ArF lithography. The other is that asymmetric bit line should be made for OPC(Optical Proximity Correction) modeling. Therefore advanced ArF lithography scanner should be used for define bit line with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC, PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), and mask biasing.. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest method to improve of bit line CD uniformity, patterned by KrF lithographic process in 90nm sFlash(stand alone Flash) devices. We applied new scheme of mask manufacturing, which is able to realize 2 different types of mask, binary and phase-shift, into one plate. Finally, we could get the more uniform bit lines and we expect to get more stable properties then before applying this technique.

  1. Mask defect printing mechanisms for future lithography generations

    NASA Astrophysics Data System (ADS)

    Erdmann, Andreas; Graf, Thomas; Bubke, Karsten; Höllein, Ingo; Teuber, Silvio

    2006-03-01

    Mask defects are of increasing concern for future lithography generations. The improved resolution capabilities of immersion and EUV systems increase also the sensitivity of these systems with respect to small imperfections of the mask. Advanced mask technologies such as alternating phase shift masks (AltPSM), chromeless phase shift lithography (CPL), or "thick" absorbers on EUV masks introduce new defect types. The paper presents an application of rigorous electromagnetic field modeling for the study of typical defect printing mechanisms in ArF immersion lithography and in EUV lithography. For standard imaging and mask technologies, such as binary masks or attenuated phase shift masks, small defects usually print as linewidth or critical dimension (CD) errors with the largest effect at best focus. For AltPSM, CPL masks, and EUV masks this is not always the case. Several unusual printing scenarios were observed: placement errors due to defects can become more critical than CD-errors, defects may print more critical at defocus positions different from the center of the process window, the defect printing may become asymmetric through focus, and the risk of defect printing depends on the polarization of the used light source. Several simulation examples will demonstrate these effects. Rigorous EMF simulations in combination with vector imaging simulations are very useful to understand the origins of the observed defect printing mechanisms.

  2. Designing dual-trench alternating phase-shift masks for 140-nm and smaller features using 248-nm KrF and 193-nm ArF lithography

    NASA Astrophysics Data System (ADS)

    Petersen, John S.; Socha, Robert J.; Naderi, Alex R.; Baker, Catherine A.; Rizvi, Syed A.; Van Den Broeke, Douglas J.; Kachwala, Nishrin; Chen, J. Fung; Laidig, Thomas L.; Wampler, Kurt E.; Caldwell, Roger F.; Takeuchi, Susumu; Yamada, Yoshiro; Senoh, Takashi; McCallum, Martin

    1998-09-01

    One method for making the alternating phase-shift mask involves cutting a trench into the quartz of the mask using an anisotropic dry etch, followed by an isotropic etch to move the corners of the trench underneath the chrome to minimize problems caused by diffraction at the bottom corners of the phase-trench. This manufacturing method makes the addition of subresolution scattering bars and serifs problematic, because the amount of the undercut causes chrome lifting of these small features. Adding an additional anisotropically etched trench to both cut and uncut regions is helpful, but the etch does not move the trench corners under the chrome and result in a loss to intensity and image contrast. At 248 nm illumination and 4X magnification, our work shows that a combination of 240 nm dual-trench and 5 nm to 10 nm undercut produces images with equal intensity between shifted and unshifted regions without loss of image contrasts. This paper demonstrates optical proximity correction for doing 100 nm, 120 nm, 140 nm and 180 nm lines of varying pitch for a simple alternating phase-shift mask, with no dual-trench or undercut. Then the electromagnetic field simulator, TEMPEST, is used to find the best combination of dual-trench depth and amount of undercut for an alternating phase-shift mask. Phase measurement using 248 nm light and depth measurement of thirty-six unique combinations of dual-trench and phase-shift trench are shown. Based on modeling and experimental results, recommendations for making a fine tuned dual-trench 248 nm mask, as well as an extension of the dual-trench alternating phase-shift technique to 193 nm lithography, are made.

  3. Current Status and Perspective of EUV Lithography

    NASA Astrophysics Data System (ADS)

    Nishiyama, Iwao

    The EUV lithography (EUVL) utilizes 13-nm photons as a light source. Because of the short wavelength, it provides a very high resolution and is applicable to the fabrication of multiple generations of semiconductor devices from 45 nm hp down to 32 and even 22 nm hp. This makes EUVL the most promising next-generation lithography, which will follow ArF immersion lithography. However, because the wavelength is so short, bringing EUVL to the level of a practical production tool involves many difficult challenges, such as the development of a high-power light source, high-precision reflective optics, low-defect multilayer masks, a high-resolution high-sensitivity resist, and so on. To overcome the technical difficulties and accelerate the development of EUVL, various projects have been launched and are currently running under the management of SEMATECH (US), NEDEA+ (Europe), and ASET and EUVA (Japan). These activities have produced great advances in EUVL technology in the past several years. A full-field exposure tool for process development (α tool) will be delivered in 2006, and an exposure tool for mass production (γ tool) will be delivered two or three years after that. This presentation gives an overview of recent progress in EUVL.

  4. Advanced patterning approaches based on negative-tone development (NTD) process for further extension of 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Shirakawa, Michihiro; Inoue, Naoki; Furutani, Hajime; Yamamoto, Kei; Goto, Akiyoshi; Fujita, Mitsuhiro

    2015-03-01

    Two approaches which achieve the further evolution of NTD (Negative Tone Development) process are shown in this article. One is ACCEL (Advanced Chemical Contrast Enhancement Layer) process that can improve the lithography performance and the other is DTD (Dual Tone Development) process that can shrink patterning pitch below the limit of single exposure process. ACCEL is an additionally provided layer which is coated on a surface of NTD resist film before exposure and removed by NTD developer. ACCEL can enhance the acid distribution and dissolution contrast of the NTD resist. In fact, lithography performances such as exposure latitude (EL) and DOF improved dramatically by applying ACCEL compared to the NTD resist without ACCEL. We consider that suppression of excessive acid diffusion and material transfer between the resist layer and the ACCEL layer are the causes of the contrast enhancement. DTD process is one of the simplest pitch shrink method which is achieved by repeating PTD and NTD process. Feasibility study of DTD patterning has been demonstrated so far. However, Exposure latitude margin and CDU performance were not sufficient for applying DTD to HVM. We developed the novel DTD specific resist under a new concept, and 32 nm half pitch (hp) contact hole (CH) pattern was successfully formed with enough margins. DTD line and space (L/S) patterning are also demonstrated and 24 nm hp L/S pattern can be resolved. k1 factors of DTD CH and L/S patterns reach to 0.20 and 0.15, respectively.

  5. Tumor suppressor ARF

    PubMed Central

    Través, Paqui G.; Luque, Alfonso; Hortelano, Sonsoles

    2012-01-01

    ARF (alternative reading frame) is one of the most important tumor regulator playing critical roles in controlling tumor initiation and progression. Recently, we have demonstrated a novel and unexpected role for ARF as modulator of inflammatory responses. PMID:23162766

  6. Optical lithography for nanotechnology

    NASA Astrophysics Data System (ADS)

    Flagello, Donis G.; Arnold, Bill

    2006-09-01

    Optical lithography is continually evolving to meet the ever demanding requirements of the micro - and nano- technology communities. Since the optical exposure systems used in lithography are some of the most advanced and complex optical instruments ever built, they involve ever more complex illuminator designs, nearly aberration free lenses, and hyper numerical apertures approaching unity and beyond. Fortunately, the lithography community has risen to the challenge by devising many inventive optical systems and various methods to use and optimize exposure systems. The recent advancement of water immersion technology into lithography for 193nm wavelengths has allowed the numerical aperture (NA) of lithographic lenses to exceed 1.0 or a hyper-NA region. This allows resolution limits to extend to the 45nm node and beyond with NA>1.3. At these extreme NAs, the imaging within the photoresist is accomplished by not only using water immersion but also using polarized light lithography. This paper will review the current state-of-the-art in immersion, hyper-NA lithography. We show the latest results and discuss the various phenomena that may arise using these systems. Furthermore, we show some of the advanced image optimization techniques that allow lithographic printing at the physical limits of resolution. In addition, we show that the future of optical lithography is likely to go well beyond the 30nm regime using advancements in 193nm double-patterning technology and/or the use of extreme ultra-violet (EUV) optical systems.

  7. Study on RLS trade-off resist upgrade for production ready EUV lithography

    NASA Astrophysics Data System (ADS)

    Lee, Junghyung; Kim, Jieun; Jeong, Seunguk; Lim, Mijung; Koo, Sunyoung; Lim, Chang-Moon; Kim, Young-Sik

    2016-03-01

    Extreme Ultraviolet (EUV) is the most promising technology as substitute for multiple patterning based on ArF immersion lithography. If enough productivity can be accomplished, EUV will take main role in the chip manufacturing. Since the introduction of NXE3300, many significant results have been achieved in source power and availability, but lots of improvements are still required in various aspects for the implementation of EUV lithography on high volume manufacturing. Among them, it is especially important to attain high sensitivity resist without degrading other resolution performance. In this paper, performances of various resists were evaluated with real device patterns on NXE3300 scanner and technical progress of up-to-date EUV resists will be shown by comparing with the performance of their predecessors. Finally the prospect of overcoming the triangular trade-off between sensitivity, resolution, line edge roughness (LER) and achieving high volume manufacturing will be discussed.

  8. High-productivity immersion scanner enabling 1xnm hp manufacturing

    NASA Astrophysics Data System (ADS)

    Shirata, Yosuke; Shibazaki, Yuichi; Kosugi, Junichi; Kikuchi, Takahisa; Ohmura, Yasuhiro

    2013-04-01

    NSR-S622D, Nikon's new ArF immersion scanner, provides the best and practicable solutions to meet the escalating requirement from device manufactures to accommodate the further miniaturization of device pattern. NSR-S622D has various additional functions compared to the previous model such as the newly developed illumination system, new projection lens, new AF system new wafer table in addition to the matured Streamlign platform. These new features will derive the outstanding performance of NSR, enabling highly controlled CD uniformity, focus accuracy and overlay accuracy. NSR-S622D will provide the adequate capabilities that are demanded from a lithography tool for production of 1x nm hp node and beyond.

  9. Lithography equipment

    NASA Astrophysics Data System (ADS)

    Levinson, Harry J.

    1996-07-01

    Until recently, lithography capability evolved consistently with Moore's law. It appears that semiconductor manufacturers are now deviating from Moore's law, which has implications for lithography equipment. DUV lithography is moving into production in a mix-and-match environment. Step- and-scan technology is the wave of the near-future, as a way to contend with the difficulty of manufacturing wide-field lenses. Resist processing equipment will undergo few fundamental changes, but will often be integrated with steppers, particularly for DUV applications. Metrology is being stretched beyond its limits for technologies below 250 nm. The move is on to 300 m diameter wafers, and 193 nm lithography is under consideration.

  10. Future trends in high-resolution lithography

    NASA Astrophysics Data System (ADS)

    Lawes, R. A.

    2000-02-01

    A perennial question is "what is the future of high-resolution lithography, a key technology that drives the semiconductor industry"? The dominant technology over the last 30 years has been optical lithography, which by lowering wavelengths to 193 nm (ArF) and 157 nm (F 2) and by using optical "tricks" such as phase shift masks, off-axis illumination and phase filters, should be capable of 100 nm CMOS technology. So where does this leave the competition? The 100-nm lithography used to be the domain of electron beam lithography but only in research laboratories. Significant efforts are being made to increase throughput by electron projection (scattering with angular limitation projection electron beam lithography or SCALPEL). X-ray lithography remains a demonstrated R&D tool waiting to be commercially exploited but the initial expenditure to do so is very high. Ion beam lithography and extreme ultraviolet (EUV) ( λ<12 nm) have also received attention in recent years. This paper will concentrate on some of the key issues and speculate on how and when an alternative to optical lithography will be embraced by industry.

  11. An ice lithography instrument

    NASA Astrophysics Data System (ADS)

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J. A.

    2011-06-01

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.

  12. An ice lithography instrument

    SciTech Connect

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J. A.

    2011-06-15

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.

  13. An ice lithography instrument.

    PubMed

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J A

    2011-06-01

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines. PMID:21721733

  14. An ice lithography instrument

    PubMed Central

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J. A.

    2011-01-01

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines. PMID:21721733

  15. ArF photoresist system using alicyclic polymer

    NASA Astrophysics Data System (ADS)

    Park, Joo Hyeon; Kim, Seong-Ju; Park, Sun-Yi; Lee, Hosull; Jung, Jae Chang; Bok, Cheol-Kyu; Baik, Ki-Ho

    1997-07-01

    We have developed a chemically amplified photoresist for use in ArF lithography based on alicyclic polymer. 3- Bicyclo(2,2,1)hept-2-yl-3-(2-methyl allyoxy)-propionic acid tert-butyl ester (BHPE) was prepared as a new kind of protected acid-labile monomer. Terpolymer, poly(BHPE-NBO-MAL), was prepared with BHPE, 5-norbornen-2-ol (NBO), and maleic anhydride (MAL) monomers by radical polymerization. Photoresist of poly(BHPE-NBO-MAL) displayed good adhesion, dry-etch resistance, and development. As a result, we obtained 0.16 micrometer line-and-space positive patterns with 2.38 wt% TMAH aqueous solution using an ArF exposure system.

  16. Spectroscopic Ellipsometry Applications in Advanced Lithography Research

    NASA Astrophysics Data System (ADS)

    Synowicki, R. A.; Pribil, Greg K.; Hilfiker, James N.; Edwards, Kevin

    2005-09-01

    Spectroscopic ellipsometry (SE) is an optical metrology technique widely used in the semiconductor industry. For lithography applications SE is routinely used for measurement of film thickness and refractive index of polymer photoresist and antireflective coatings. While this remains a primary use of SE, applications are now expanding into other areas of advanced lithography research. New applications include immersion lithography, phase-shift photomasks, transparent pellicles, 193 and 157 nm lithography, stepper optical coatings, imprint lithography, and even real-time monitoring of etch development rate in liquid ambients. Of recent interest are studies of immersion fluids where knowledge of the fluid refractive index and absorption are critical to their use in immersion lithography. Phase-shift photomasks are also of interest as the thickness and index of the phase-shift and absorber layers must be critically controlled for accurate intensity and phase transmission. Thin transparent pellicles to protect these masks must be also characterized for thickness and refractive index. Infrared ellipsometry is sensitive to chemical composition, film thickness, and how film chemistry changes with processing. Real-time monitoring of polymer film thickness during etching in a liquid developer allows etch rate and endpoint determination with monolayer sensitivity. This work considers these emerging applications to survey the current status of spectroscopic ellipsometry as a characterization technique in advanced lithography applications.

  17. Lithography optics: its present and future

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koichi; Mori, Takashi

    1998-09-01

    Firstly, various technical aspects of ArF optics are surveyed. At present, the ArF excimer laser is regarded as one of the most promising candidates as a next-generation light source for optical lithography. Discussions are ranging over some critical issues of ArF optics. The lifetime of ArF optics supposedly limited by the radiation compaction of silica glass is estimated in comparison with KrF optics. Availability of calcium fluoride (CaF2) is also discussed. As a designing issue, a comparative study is made about the optical configuration, dioptric or catadioptric. In the end, our resist-based performance is shown. Secondly, estimated are the future trend regarding minimum geometry and the optical parameters, such as numerical aperture and wavelength. For the estimation, simulations based on aerial images are performed, where in the resolution limit is defined as a minimum feature size which retains practical depth of focus. Pattern geometry is classified into two categories, which are dense lines and isolated lines. Available wavelengths are assumed to be KrF excimer laser ((λ =248 nm), ArF excimer laser (λ =193 nm) and F2 excimer laser (λ =157 nm). Based upon the simulation results, the resolution limit is estimated for each geometry and each wavelength.

  18. Below 70-nm contact hole pattern with RELACS process on ArF resist

    NASA Astrophysics Data System (ADS)

    Terai, Mamoru; Toyoshima, Toshiyuki; Ishibashi, Takeo; Tarutani, Shinji; Takahashi, Kiyohisa; Takano, Yusuke; Tanaka, Hatsuyuki

    2003-06-01

    A chemical shrink technology, RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink), utilizes the cross linking reaction catalyzed by the acid component existing in a predefined resist pattern. This "RELACS" process is a hole shrinking procedure that includes simple coating, baking, and rinsing applied after conventional photolithography. Our target is realize of sub-70nm hole pattern formation by using new RELACS for ArF resist. At present, RELACS process is introduced to mass production of KrF lithography by using AZ R200 (Product name of Clariant) mainly. Then first of all we reported process performance of conventional RELACS material, AZ R200 with ArF resist. However AZ R200 does not show satisfactory shrinkage on ArF resist. Thereupon, we started on the development of new RELACS corresponding to ArF resist. As the result, we developed new RELACS material including Cross Linking Accelerator (CLA). It was found that CLA is able to improve reactivity of RELACS with ArF-resist. By using this new RELACS, It is Realized sub-70nm hole pattern formation with ArF-Ex lithography and It is able to Control of hole size by mixing bake (MB) temperature and additive ratio of CLA. Moreover this process was realized that thickness of shrunk hole is increased.

  19. Litho-freeze-litho-etch (LFLE) enabling dual wafer flow coat/develop process and freeze CD tuning bake for >200wph immersion ArF photolithography double patterning

    NASA Astrophysics Data System (ADS)

    Pieczulewski, Charles N.; Rosslee, Craig A.

    2009-12-01

    The SOKUDO DUO track system incorporates a dual-path wafer flow to reduce the burden on the wafer handling unit and enables high-throughput coat/develop/bake processing in-line with semiconductor photolithography exposure (scanner) equipment. Various photolithography-based double patterning process flows were modeled on the SOKUDO DUO system and it was confirmed to be able to process both Litho-Process-Litho-Etch (LPLE)*2 and negative-tone develop process wafers at greater than 200 wafer-per-hour (wph) capability for each litho-pass through the in-line exposure tool. In addition, it is demonstrated that Biased Hot Plates (BHP) with "cdTune" software improves litho pattern #1 and litho pattern #2 within wafer CD uniformity. Based primarily on JSR Micro materials for Litho-Freeze- Litho-Etch (LFLE) the coat, develop and bake process CD uniformity improvement results are demonstrated on the SOKUDO RF3S immersion track in-line with ASML XT:1900Gi system at IMEC, Belgium.

  20. The study of lithography conditions to use advanced resist performance properly

    NASA Astrophysics Data System (ADS)

    Yang, Zhengkai; Wang, Wuping; Chen, Quan; Aoyama, Hajime; Takemasa, Kengo; Sei, Toshihiko; Miyazawa, Tami; Matsuyama, Tomoyuki; Shao, Chun

    2015-03-01

    Correlation of resist modeling of printed features with lithographic data is a necessary part of developing new lithographic processes. Recently, we have found a case in which the most advanced resist types sometimes show better behavior than expectations from optical simulation in terms of dose latitude, MEEF (mask error enhancement factor), and even CD variation through different pitches. This superior resist performance may allow greater margin for error in each component, such as mask, scanner, and metrology in very low-k1 lithography. On the other hand, since the resist pattern CD for the most advanced resist is very much different from the prediction of optical simulation, it is a challenge to build OPC models using the exposure result with the resist. In order to solve this issue, we have tried to use several litho parameters to reduce the gap between optical simulation and resist CDs for OPC modeling. In this paper we discuss the effect of the parameters to reduce the gap between optical model and actual resist behavior with keeping superior performance as much as possible. The method we mention may be a key to use the most advanced resist in near future. As a result the life of ArF immersion lithography in the critical layer would be extended than we expect today.

  1. Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro

    2015-09-01

    Electron beam (EB) lithography is a key technology for the fabrication of photomasks for ArF immersion and extreme ultraviolet (EUV) lithography and molds for nanoimprint lithography. In this study, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time, to clarify the feasibility of single nano patterning on quartz substrates using EB lithography with chemically amplified resist processes. When the quencher diffusion constant is the same as the acid diffusion constant, the maximum chemical gradient of the line-and-space pattern with a 7 nm quarter-pitch did not differ much from that with a 14 nm half-pitch under the condition described above. Also, from the viewpoint of process control, a low quencher diffusion constant is considered to be preferable for the fabrication of line-and-space patterns with a 7 nm quarter-pitch on quartz substrates.

  2. Novel ArF photoresist polymer to suppress the roughness formation in plasma etching processes

    NASA Astrophysics Data System (ADS)

    Kato, Keisuke; Yasuda, Atsushi; Maeda, Shin-ichi; Uesugi, Takuji; Okada, Takeru; Wada, Akira; Samukawa, Seiji

    2013-03-01

    The serious problem associated with 193-nm lithography using an ArF photoresist is roughness formation of photoresist polymer during plasma processes. We have previously investigated the mechanism of roughness formation caused by plasma. The main deciding factor for roughness formation is a chemical reaction between photoresist polymer and reactive species from plasma. The lactone group in photoresist polymer is highly chemically reactive, and shrinking the lactone structure enhances the roughness formation. In this paper, on the basis of the mechanism of roughness formation, we propose a novel ArF photoresist polymer. The roughness formation was much more suppressed in the novel photoresist polymer during plasma etching process than in the previous type. In the novel photoresist polymer, chemical reactions were spread evenly on the photoresist film surface by adding the polar structure. As a result, decreases in the lactone group were inhibited, leading to suppressing ArF photoresist roughness.

  3. Development of a computational lithography roadmap

    NASA Astrophysics Data System (ADS)

    Chen, J. Fung; Liu, Hua-Yu; Laidig, Thomas; Zuniga, Christian; Cao, Yu; Socha, Robert

    2008-03-01

    While lithography R&D community at large has already gotten the mind set for 32nm, all eyes are on 22nm node. Current consensus is to employ computational lithography to meet wafer CD uniformity (CDU) requirement. Resolution enhancement technologies (RET) and model OPC are the two fundamental components for computational lithography. Today's full-chip CDU specifications are already pushing physical limits at extreme lithography k I factor. While increasingly aggressive RET either by double exposure or double patterning are enabling imaging performance, for CDU control we need ever more accurate OPC at a greater computational efficiency. In this report, we discuss the desire for wanting more robust and accurate OPC models. One important trend is to have predictive OPC models allowing accurate OPC results to be obtained much faster, shortening the qualification process for exposure tools. We investigate several key parameters constitute to accuracy achievable in computational lithography. Such as the choice of image pixel size, numbers of terms needed for transmission cross coefficients (TCC), and "safe" ambit radius for assuring accurate CD prediction. Selections of image pixel size and "safe" ambit radius together determine % utilization for 2D fast Fourier transformation (FFT) for efficient full-chip OPC computation. For IC manufacturing beyond ArF, we made initial observations and estimations on EUV computational lithography. These discussions pave the way for developing a computational lithography roadmap extends to the end of Moore's Law. This computational lithography roadmap aims to be a complement for the current ITRS roadmap on what does it take to achieve CD correction accuracy.

  4. Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

    SciTech Connect

    Jinnai, Butsurin; Koyama, Koji; Kato, Keisuke; Yasuda, Atsushi; Momose, Hikaru; Samukawa, Seiji

    2009-03-01

    ArF excimer laser lithography was introduced to fabricate nanometer-scale devices and uses chemically amplified photoresist polymers including photoacid generators (PAGs). Because plasma-etching processes cause serious problems related to the use of ArF photoresists, such as line-edge roughness and low etching selectivity, we have to understand the interaction between plasma and ArF photoresist polymers. Investigating the effects of surface temperature and the irradiation species from plasma, we have found that ion irradiation by itself did not drastically increase the roughness or etching rate of ArF photoresist films unless it was combined with ultraviolet/vacuum ultraviolet (UV/VUV) photon irradiation. The structures of ArF photoresist polymers were largely unchanged by ion irradiation alone but were destroyed by combinations of ion and UV/VUV-photon irradiation. Our results suggested that PAG-mediated deprotection induced by UV/VUV-photon irradiation was amplified at surface temperatures above 100 deg. C. The etching rate and surface roughness of plasma-etched ArF photoresists are affected by the irradiation species and surface temperature during plasma etching. UV/VUV-photon irradiation plays a particularly important role in the interaction between plasma and ArF photoresist polymers.

  5. The Drosophila Arf1 homologue Arf79F is essential for lamellipodium formation.

    PubMed

    Humphreys, Daniel; Liu, Tao; Davidson, Anthony C; Hume, Peter J; Koronakis, Vassilis

    2012-12-01

    The WAVE regulatory complex (WRC) drives the polymerisation of actin filaments located beneath the plasma membrane to generate lamellipodia that are pivotal to cell architecture and movement. By reconstituting WRC-dependent actin assembly at the membrane, we recently discovered that several classes of Arf family GTPases directly recruit and activate WRC in cell extracts, and that Arf cooperates with Rac1 to trigger actin polymerisation. Here, we demonstrate that the Class 1 Arf1 homologue Arf79F colocalises with the WRC at dynamic lamellipodia. We report that Arf79F is required for lamellipodium formation in Drosophila S2R+ cells, which only express one Arf isoform for each class. Impeding Arf function either by dominant-negative Arf expression or by Arf double-stranded RNA interference (dsRNAi)-mediated knockdown uncovered that Arf-dependent lamellipodium formation was specific to Arf79F, establishing that Class 1 Arfs, but not Class 2 or Class 3 Arfs, are crucial for lamellipodia. Lamellipodium formation in Arf79F-silenced cells was restored by expressing mammalian Arf1, but not by constitutively active Rac1, showing that Arf79F does not act via Rac1. Abolition of lamellipodium formation in Arf79F-silenced cells was not due to Golgi disruption. Blocking Arf79F activation with guanine nucleotide exchange factor inhibitors impaired WRC localisation to the plasma membrane and concomitant generation of lamellipodia. Our data indicate that the Class I Arf GTPase is a central component in WRC-driven lamellipodium formation. PMID:22992458

  6. Implementation of assist features in EUV lithography

    NASA Astrophysics Data System (ADS)

    Jiang, Fan; Burkhardt, Martin; Raghunathan, Ananthan; Torres, Andres; Gupta, Rachit; Word, James

    2015-03-01

    The introduction of EUV lithography will happen at a critical feature pitch which corresponds to a k1 factor of roughly 0.45. While this number seems not very aggressive compared to recent ArF lithography nodes, the number is sufficiently low that the introduction of assist features has to be considered. While the small NA makes the k1 factor larger, the depth of focus still needs to be scaled down with wavelength. However the exposure tool's focus control is not greatly improved over the ArF tools, so other solutions to improve the depth of focus, e.g. SRAFs, are needed. On the other hand, sub-resolution assist features (SRAFs) require very small mask dimensions, which make masks more costly to write and inspect. Another disadvantage of SRAFs is the fact that they may cause pattern-dependent best focus shift due to thick mask effects. Those effects can be predicted, but the shift of best focus and the associated tilt of Bossung curves make the process more difficult to control. We investigate the impact of SRAFs on printing in EUV lithography and evaluate advantages and disadvantages. By using image quality parameters such as best focus (BF), and depth of focus (DOF), respectively with and without SRAFs, we will answer the question if we can gain a net benefit for 1D and 2D patterns by adding SRAFs. SRAFs will only be introduced if any net improvement in process variation (PV) outweighs the additional expense of assist patterning on the mask. In this paper, we investigate the difference in printing behavior of symmetric and asymmetric SRAF placement and whether through slit effect needs to be considered in SRAF placement for EUV lithography.

  7. Subwavelength-size solid immersion lens.

    PubMed

    Kim, Myun-Sik; Scharf, Toralf; Haq, Mohammad Tahdiul; Nakagawa, Wataru; Herzig, Hans Peter

    2011-10-01

    We report on the fabrication and characterization of nanoscale solid immersion lenses (nano-SILs) with sizes down to a subwavelength range. Submicrometer-scale cylinders fabricated by electron-beam lithography are thermally reflowed to form a spherical shape. Subsequent soft lithography leads to nano-SILs on transparent substrates for optical characterization. The optical characterization is performed using a high-resolution interference microscope with illumination at 642 nm wavelength. The focal spots produced by the nano-SILs show both spot-size reduction and enhanced optical intensity, which are consistent with the immersion effect. PMID:21964145

  8. Photomask cleaning process improvement to minimize ArF haze

    NASA Astrophysics Data System (ADS)

    Graham, Michael; McDonald, Andrew

    2008-04-01

    Growth of "haze" defects on photomasks exposed in ArF lithography is recognized as a serious problem. Haze defects that have grown to detectable sizes can be analysed in situ by techniques such as EDX or Raman, but to analyze at the photomask manufacturing stage requires extraction of residues by solution in DI water. The effect of extraction conditions, including surface area and material, water volume, time, and temperature, has been studied. A standard method to compare residual ion levels is proposed. Various methods for reducing residual ion levels from the photomask cleaning process have been published. These include SPM reduction, oxygen plasma, SC1 dilution, Megasonic agitation, hot rinse, UV exposure, thermal bake, ozone water, ozone gas, and hydrogenated water. Critical parameters for the cleaning process, besides residual ion levels and contamination removal efficiency, include CD shift, AR/chrome damage, scatter bar damage, and on phase shift masks, the change in phase and transmission. An optimized process combining conventional and novel techniques is described. Data is presented to show the importance of controlling all resist strip and clean processes, not just the final clean. It has achieved sulphate levels of 0.2ng/cm2 (well below the critical level for haze growth), as well as improved results for the other critical parameters. This process has been demonstrated to allow ArF exposure of large numbers of wafers without the appearance of haze defects.

  9. VUV lithography

    DOEpatents

    George, Edward V.; Oster, Yale; Mundinger, David C.

    1990-01-01

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  10. VUV lithography

    DOEpatents

    George, E.V.; Oster, Y.; Mundinger, D.C.

    1990-12-25

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

  11. Maskless lithography

    DOEpatents

    Sweatt, William C.; Stulen, Richard H.

    1999-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  12. Beyond k1=0.25 lithography: 70-nm L/S patterning using KrF scanners

    NASA Astrophysics Data System (ADS)

    Ebihara, Takeaki; Levenson, Marc D.; Liu, Wei; He, Jim; Yeh, Wendy; Ahn, Sang; Oga, Toshihiro; Shen, Meihua; M'saad, Hichem

    2003-12-01

    The extendibility of optical lithography using KrF and ArF exposure tools is still being investigated, even, being demanded strongly now, due to the unforeseen issues, high cost, and general difficulty of NGLs - including F2 and immersion lithography. In spite of these challenges Moore's Law requires continued shrinks and the ITRS roadmap still keeps its aggressive timetable. In order to follow the ITRS roadmap, the resolution must keep improving by increasing the lens NA for optical exposure tools. However, the conventional limit of optical resolution (kpitch=0.5) is very close for the current technologies, perhaps limiting progress unless NGL becomes available quickly. Therefore we need to find a way to overcome this seemingly fundamental limit of optical resolution. In this paper, we propose two practical two-mask /double-exposure schemes for doubling resolution in future lithography. One method uses a Si-containing bi-layer resist, and the other method uses Applied Materials' APF (a removable hard mask). The basic ideas of both methods are similar: The first exposure forms 1:3 ratio L/S patterns in one resist/hard mask layer, then the second exposure images another 1:3 ratio L/S pattern in-between the two lines (or two spaces) formed by the first exposure. The combination of these two exposures can form, in theory, kpitch=0.25 patterns. In this paper, we will demonstrate 70nm L/S pattern (140nm pitch) or smaller by using a NA0.68 KrF Scanner and a strong-RET reticle, which corresponds to kpitch = 0.38 (k1=0.19). We will also investigate the critical alignment and CD control issues for these two-mask/dual-exposure schemes.

  13. EUV lithography

    NASA Astrophysics Data System (ADS)

    Kemp, Kevin; Wurm, Stefan

    2006-10-01

    Extreme ultraviolet lithography (EUVL) technology and infrastructure development has made excellent progress over the past several years, and tool suppliers are delivering alpha tools to customers. However, requirements in source, mask, optics, and resist are very challenging, and significant development efforts are still needed to support beta and production-level performance. Some of the important advances in the past few years include increased source output power, tool and optics system development and integration, and mask blank defect reduction. For example, source power has increased to levels approaching specification, but reliable source operation at these power levels has yet to be fully demonstrated. Significant efforts are also needed to achieve the resolution, line width roughness, and photospeed requirements for EUV photoresists. Cost of ownership and extendibility to future nodes are key factors in determining the outlook for the manufacturing insertion of EUVL. Since wafer throughput is a critical cost factor, source power, resist sensitivity, and system design all need to be carefully considered. However, if the technical and business challenges can be met, then EUVL will be the likely technology of choice for semiconductor manufacturing at the 32, 22, 16 and 11 nm half-pitch nodes. To cite this article: K. Kemp, S. Wurm, C. R. Physique 7 (2006).

  14. 7nm logic optical lithography with OPC-Lite

    NASA Astrophysics Data System (ADS)

    Smayling, Michael C.; Tsujita, Koichiro; Yaegashi, Hidetami; Axelrad, Valery; Nakayama, Ryo; Oyama, Kenichi; Yamauchi, Shohei; Ishii, Hiroyuki; Mikami, Koji

    2015-03-01

    The CMOS logic 22nm node was the last one done with single patterning. It used a highly regular layout style with Gridded Design Rules (GDR). Smaller nodes have required the same regular layout style but with multiple patterning for critical layers. A "line/cut" approach is being used to achieve good pattern fidelity and process margin.[1] As shown in Fig. 1, even with "line" patterns, pitch division will eventually be necessary. For the "cut" pattern, Design-Source-Mask Optimization (DSMO) has been demonstrated to be effective at the 20nm node and below.[2,3,4] Single patterning was found to be suitable down to 16nm, while double patterning extended optical lithography for cuts to the 10-12nm nodes. Design optimization avoided the need for triple patterning. Lines can be patterned with 193nm immersion with no complex OPC. The final line dimensions can be achieved by applying pitch division by two or four.[5] In this study, we extend the scaling using simplified OPC to the 7nm node for critical FEOL and BEOL layers. The test block is a reasonably complex logic function with ~100k gates of combinatorial logic and flip-flops, scaled from previous experiments. Simulation results show that for cuts at 7nm logic dimensions, the gate layer can be done with single patterning whose minimum pitch is 53nm, possibly some of the 1x metal layers can be done with double patterning whose minimum pitch is 53nm, and the contact layer will require triple patterning whose minimum pitch is 68nm. These pitches are less than the resolution limit of ArF NA=1.35 (72nm). However these patterns can be separated by a combination of innovative SMO for less than optical resolution limit and a process trick of hole-repair technique. An example of triple patterning coloring is shown in Fig 3. Fin and local interconnect are created by lines and trims. The number of trim patterns are 3 times (min. pitch=90nm) and twice (min. pitch=120nm), respectively. The small number of masks, large pitches, and

  15. Immersive video

    NASA Astrophysics Data System (ADS)

    Moezzi, Saied; Katkere, Arun L.; Jain, Ramesh C.

    1996-03-01

    Interactive video and television viewers should have the power to control their viewing position. To make this a reality, we introduce the concept of Immersive Video, which employs computer vision and computer graphics technologies to provide remote users a sense of complete immersion when viewing an event. Immersive Video uses multiple videos of an event, captured from different perspectives, to generate a full 3D digital video of that event. That is accomplished by assimilating important information from each video stream into a comprehensive, dynamic, 3D model of the environment. Using this 3D digital video, interactive viewers can then move around the remote environment and observe the events taking place from any desired perspective. Our Immersive Video System currently provides interactive viewing and `walkthrus' of staged karate demonstrations, basketball games, dance performances, and typical campus scenes. In its full realization, Immersive Video will be a paradigm shift in visual communication which will revolutionize television and video media, and become an integral part of future telepresence and virtual reality systems.

  16. Immersive CAD

    SciTech Connect

    Ames, A.L.

    1999-02-01

    This paper documents development of a capability for performing shape-changing editing operations on solid model representations in an immersive environment. The capability includes part- and assembly-level operations, with part modeling supporting topology-invariant and topology-changing modifications. A discussion of various design considerations in developing an immersive capability is included, along with discussion of a prototype implementation we have developed and explored. The project investigated approaches to providing both topology-invariant and topology-changing editing. A prototype environment was developed to test the approaches and determine the usefulness of immersive editing. The prototype showed exciting potential in redefining the CAD interface. It is fun to use. Editing is much faster and friendlier than traditional feature-based CAD software. The prototype algorithms did not reliably provide a sufficient frame rate for complex geometries, but has provided the necessary roadmap for development of a production capability.

  17. Arf1 and Arf6 Promote Ventral Actin Structures formed by acute Activation of Protein Kinase C and Src

    PubMed Central

    Caviston, Juliane P.; Cohen, Lee Ann; Donaldson, Julie G.

    2016-01-01

    Arf proteins regulate membrane traffic and organelle structure. Although Arf6 is known to initiate actin-based changes in cell surface architecture, Arf1 may also function at the plasma membrane. Here we show that acute activation of protein kinase C (PKC) induced by the phorbol ester PMA led to the formation of motile actin structures on the ventral surface of Beas-2b cells, a lung bronchial epithelial cell line. Ventral actin structures also formed in PMA-treated HeLa cells that had elevated levels of Arf activation. For both cell types, formation of the ventral actin structures was enhanced by expression of active forms of either Arf1 or Arf6, and by the expression of guanine nucleotide exchange factors that activate these Arfs. By contrast, formation of these structures was blocked by inhibitors of PKC and Src, and required phosphatidylinositol 4, 5-bisphosphate, Rac, Arf6 and Arf1. Furthermore, expression of ASAP1, an Arf1 GTPase activating protein (GAP) was more effective at inhibiting the ventral actin structures than was ACAP1, an Arf6 GAP. This study adds to the expanding role for Arf1 in the periphery and identifies a requirement for Arf1, a “Golgi Arf”, in the reorganization of the cortical actin cytoskeleton on ventral surfaces, against the substratum. PMID:24916416

  18. Investigation of cyclopolymerization for ArF positive photoresist

    NASA Astrophysics Data System (ADS)

    Lee, Youngjoon; Hashimoto, Kazuhiko; Fujishima, Hiroaki; Hanawa, Ryotaro; Uetani, Yasunori

    2003-06-01

    Cyclopolymerization methodology is unique because it uses a standard free radical polymerization that is free from the use of metal catalyzed chemistry while it still can provide the main chain cyclic structure. The feasibility and applicability have been examined previously, from which some of the potential opportunities have been revealed. Our initial research direction was aimed at developing robust etching resistant acrylic resins through cyclopolymerization. During the course of our investigation it came to our attention that there might be more than one benefit we could get from this approach and here in reported is our recent progress in the study. A series of diacrylic monomers and their cyclic polymers have been prepared and evaluated for ArF optical lithography applications. The reaction of acrylic esters that have essential functional groups for lithographic performances such as an acid-cleavable bulky adamantyl group and a polar lactone group with formaldehyde in the presence of diazabicyclo-(2,2,2)octane has been shown to provide access to an ether linked symmetric or asymmetric diacrylic monomer depending on the starting materials with a reasonable yield after an adequate purification procedure. While the main research focus of cyclopolymerization of diacrylic monomers has been an improvement of dry etching resistance, an equal interest was placed on enhancing homogeneity in the polymerization reaction medium.

  19. Auxin-dependent compositional change in Mediator in ARF7- and ARF19-mediated transcription

    PubMed Central

    Ito, Jun; Fukaki, Hidehiro; Onoda, Makoto; Li, Lin; Li, Chuanyou; Tasaka, Masao; Furutani, Masahiko

    2016-01-01

    Mediator is a multiprotein complex that integrates the signals from transcription factors binding to the promoter and transmits them to achieve gene transcription. The subunits of Mediator complex reside in four modules: the head, middle, tail, and dissociable CDK8 kinase module (CKM). The head, middle, and tail modules form the core Mediator complex, and the association of CKM can modify the function of Mediator in transcription. Here, we show genetic and biochemical evidence that CKM-associated Mediator transmits auxin-dependent transcriptional repression in lateral root (LR) formation. The AUXIN/INDOLE 3-ACETIC ACID 14 (Aux/IAA14) transcriptional repressor inhibits the transcriptional activity of its binding partners AUXIN RESPONSE FACTOR 7 (ARF7) and ARF19 by making a complex with the CKM-associated Mediator. In addition, TOPLESS (TPL), a transcriptional corepressor, forms a bridge between IAA14 and the CKM component MED13 through the physical interaction. ChIP assays show that auxin induces the dissociation of MED13 but not the tail module component MED25 from the ARF7 binding region upstream of its target gene. These findings indicate that auxin-induced degradation of IAA14 changes the module composition of Mediator interacting with ARF7 and ARF19 in the upstream region of their target genes involved in LR formation. We suggest that this regulation leads to a quick switch of signal transmission from ARFs to target gene expression in response to auxin. PMID:27217573

  20. Auxin-dependent compositional change in Mediator in ARF7- and ARF19-mediated transcription.

    PubMed

    Ito, Jun; Fukaki, Hidehiro; Onoda, Makoto; Li, Lin; Li, Chuanyou; Tasaka, Masao; Furutani, Masahiko

    2016-06-01

    Mediator is a multiprotein complex that integrates the signals from transcription factors binding to the promoter and transmits them to achieve gene transcription. The subunits of Mediator complex reside in four modules: the head, middle, tail, and dissociable CDK8 kinase module (CKM). The head, middle, and tail modules form the core Mediator complex, and the association of CKM can modify the function of Mediator in transcription. Here, we show genetic and biochemical evidence that CKM-associated Mediator transmits auxin-dependent transcriptional repression in lateral root (LR) formation. The AUXIN/INDOLE 3-ACETIC ACID 14 (Aux/IAA14) transcriptional repressor inhibits the transcriptional activity of its binding partners AUXIN RESPONSE FACTOR 7 (ARF7) and ARF19 by making a complex with the CKM-associated Mediator. In addition, TOPLESS (TPL), a transcriptional corepressor, forms a bridge between IAA14 and the CKM component MED13 through the physical interaction. ChIP assays show that auxin induces the dissociation of MED13 but not the tail module component MED25 from the ARF7 binding region upstream of its target gene. These findings indicate that auxin-induced degradation of IAA14 changes the module composition of Mediator interacting with ARF7 and ARF19 in the upstream region of their target genes involved in LR formation. We suggest that this regulation leads to a quick switch of signal transmission from ARFs to target gene expression in response to auxin. PMID:27217573

  1. Exposure tool control for advanced semiconductor lithography

    NASA Astrophysics Data System (ADS)

    Matsuyama, Tomoyuki

    2015-08-01

    This is a review paper to show how we control exposure tool parameters in order to satisfy patterning performance and productivity requirements for advanced semiconductor lithography. In this paper, we will discuss how we control illumination source shape to satisfy required imaging performance, heat-induced lens aberration during exposure to minimize the aberration impact on imaging, dose and focus control to realize uniform patterning performance across the wafer and patterning position of circuit patterns on different layers. The contents are mainly about current Nikon immersion exposure tools.

  2. The structural basis of Arf effector specificity: the crystal structure of ARF6 in a complex with JIP4

    PubMed Central

    Isabet, Tatiana; Montagnac, Guillaume; Regazzoni, Karine; Raynal, Bertrand; Khadali, Fatima El; England, Patrick; Franco, Michel; Chavrier, Philippe; Houdusse, Anne; Ménétrey, Julie

    2009-01-01

    The JNK-interacting proteins, JIP3 and JIP4, are specific effectors of the small GTP-binding protein ARF6. The interaction of ARF6–GTP with the second leucine zipper (LZII) domains of JIP3/JIP4 regulates the binding of JIPs to kinesin-1 and dynactin. Here, we report the crystal structure of ARF6–GTP bound to the JIP4-LZII at 1.9 Å resolution. The complex is a heterotetramer with dyad symmetry arranged in an ARF6–(JIP4)2–ARF6 configuration. Comparison of the ARF6–JIP4 interface with the equivalent region of ARF1 shows the structural basis of JIP4's specificity for ARF6. Using site-directed mutagenesis and surface plasmon resonance, we further show that non-conserved residues at the switch region borders are the key structural determinants of JIP4 specificity. A structure-derived model of the association of the ARF6–JIP3/JIP4 complex with membranes shows that the JIP4-LZII coiled-coil should lie along the membrane to prevent steric hindrances, resulting in only one ARF6 molecule bound. Such a heterotrimeric complex gives insights to better understand the ARF6-mediated motor switch regulatory function. PMID:19644450

  3. MDM2-Mediated Degradation of p14ARF: A Novel Mechanism to Control ARF Levels in Cancer Cells

    PubMed Central

    Vivo, Maria; Matarese, Maria; Sepe, Maria; Di Martino, Rosaria; Festa, Luisa; Calabrò, Viola; Mantia, Girolama La; Pollice, Alessandra

    2015-01-01

    We here show a new relationship between the human p14ARF oncosuppressor and the MDM2 oncoprotein. MDM2 overexpression in various cancer cell lines causes p14ARF reduction inducing its degradation through the proteasome. The effect does not require the ubiquitin ligase activity of MDM2 and preferentially occurs in the cytoplasm. Interestingly, treatment with inhibitors of the PKC (Protein Kinase C) pathway and use of p14ARF phosphorylation mutants indicate that ARF phosphorylation could play a role in MDM2 mediated ARF degradation reinforcing our previous observations that ARF phosphorylation influences its stability and biological activity. Our study uncovers a new potentially important mechanism through which ARF and MDM2 can counterbalance each other during the tumorigenic process. PMID:25723571

  4. Role of the tumor suppressor ARF in macrophage polarization: Enhancement of the M2 phenotype in ARF-deficient mice.

    PubMed

    Herranz, Sandra; Través, Paqui G; Luque, Alfonso; Hortelano, Sonsoles

    2012-11-01

    The ARF locus is frequently inactivated in human cancer. The oncosuppressor ARF has indeed been described as a general sensor for different situation of cellular stress. We have previously demonstrated that ARF deficiency severely impairs inflammatory responses in vitro and in vivo, establishing a role for ARF in the regulation of innate immunity. The aim of the present work was to get further insights into the immune functions of ARF and to evaluate its possible contribution to the polarization of macrophages toward the M1 or M2 phenotype. Our results demonstrate that resting Arf(-/-) macrophages express high levels of Ym1 and Fizz-1, two typical markers of alternatively-activated macrophages (M2). Additionally, Arf(-/-) peritoneal macrophages showed an impaired response to lipopolysaccharide (a classical inducer of M1 polaryzation) and a reduced production of pro-inflammatory cytokines/chemokines. Moreover, upon stimulation with interleukin-4 (IL-4), an inducer of the M2 phenotype, well established M2 markers such as Fizz-1, Ym1 and arginase-1 were upregulated in Arf(-/-) as compared with wild type macrophages. Accordingly, the cytokine and chemokine profile associated with the M2 phenotype was significantly overexpressed in Arf(-/-) macrophages responding to IL-4. In addition, multiple pro-angiogenic factors such as VEGF and MMP-9 were also increased. In summary, these results indicate that ARF contributes to the polarization and functional plasticity of macrophages. PMID:23243586

  5. Advanced Mask Aligner Lithography (AMALITH)

    NASA Astrophysics Data System (ADS)

    Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna

    2015-03-01

    Mask aligner lithography is very attractive for less-critical lithography layers and is widely used for LED, display, CMOS image sensor, micro-fluidics and MEMS manufacturing. Mask aligner lithography is also a preferred choice the semiconductor back-end for 3D-IC, TSV interconnects, advanced packaging (AdP) and wafer-level-packaging (WLP). Mask aligner lithography is a mature technique based on shadow printing and has not much changed since the 1980s. In shadow printing lithography a geometric pattern is transferred by free-space propagation from a photomask to a photosensitive layer on a wafer. The inherent simplicity of the pattern transfer offers ease of operation, low maintenance, moderate capital expenditure, high wafers-per-hour (WPH) throughput, and attractive cost-of-ownership (COO). Advanced mask aligner lithography (AMALITH) comprises different measures to improve shadow printing lithography beyond current limits. The key enabling technology for AMALITH is a novel light integrator systems, referred to as MO Exposure Optics® (MOEO). MOEO allows to fully control and shape the properties of the illumination light in a mask aligner. Full control is the base for accurate simulation and optimization of the shadow printing process (computational lithography). Now photolithography enhancement techniques like customized illumination, optical proximity correction (OPC), phase masks (AAPSM), half-tone lithography and Talbot lithography could be used in mask aligner lithography. We summarize the recent progress in advanced mask aligner lithography (AMALITH) and discuss possible measures to further improve shadow printing lithography.

  6. ArF solutions for low-k1 back-end imaging

    NASA Astrophysics Data System (ADS)

    Wiaux, Vincent; Montgomery, Patrick K.; Vandenberghe, Geert; Monnoyer, Philippe; Ronse, Kurt G.; Conley, Will; Litt, Lloyd C.; Lucas, Kevin; Finders, Jo; Socha, Robert; Van Den Broeke, Douglas J.

    2003-06-01

    The requirements stated in the ITRS roadmap for back-end-of-line imaging of current and future technology nodes are very aggressive. Therefore, it is likely that high NA in combination with enhancement techniques will be necessary for the imaging of contacts and trenches, pushing optical lithography into the low-k1 regime. In this paper, we focus more specifically on imaging solutions for contact holes beyond the 90 nm node using high NA ArF lithography, as this is currently seen as one of the major challenges in optical lithography. We investigate the performance of various existing enhancement techniques in order to provide contact holes imaging solutions in a k1 range from 0.35 to 0.45, using the ASML PAS5500/1100 0.75NA ArF scanner installed at IMEC. For various resolution enhancement techniques (RET), the proof of concept has been demonstrated in literature. In this paper, we propose an experimental one-to-one comparison of these RET"s with fixed CD target, exposure tool, lithographic process, and metrology. A single exposure through pitch (dense through isolated) printing solution is preferred and is the largest challenge. The common approach using a 6% attenuated phase-shifted mask (attPSM) with a conventional illumination fails. The advantages and drawbacks of other techniques are discussed. High transmission (17%) attenuated phase shift, potentially beneficial for part of the pitch range, requires conflicting trade-offs when looking for a single exposure through pitch solution. More promising results are obtained combining a BIM or a 6% attPSM with assist slots and off-axis illumination, yielding a depth of focus (DOF) at 8% exposure latitude (EL) greater than 0.31 μm from 200 nm pitch through isolated. Chromeless phase lithography (CPL) is also discussed with promising results obtained at the densest pitch. At a 0.4 k1, an experimental extrapolation to 0.85NA demonstrates that a pitch of 180 nm can be resolved with 0.4 μm DOF at 8% EL. For all of these

  7. New 0.75 NA ArF scanning lithographic tool

    NASA Astrophysics Data System (ADS)

    Duan, Lifeng; Cheng, Jianrui; Sun, Gang; Chen, Yonghui

    2011-04-01

    A new company in the lithography world, SMEE has developed and produced a prototype wafer exposure tool, with an ArF laser light source. This tool, SMEE SSA600/10, adopted step and scan technology to obtain a large exposure filed and to average optical aberrations for a scanned image to improve CD uniformity and reduce distortion. The maximum numerical aperture is 0.75 and the maximum coherence factor of illumination system is 0.88. The illuminator provides continuously variable conventional and off-axis illumination modes to improve resolution. In this paper, the configuration of the exposure tool is presented and design concepts of the scanner are introduced. We show actual test data such as synchronization accuracy, focus and leveling repeatability, dynamic imaging performance (resolution, depth of focus) and overlay.

  8. A Review of Auxin Response Factors (ARFs) in Plants

    PubMed Central

    Li, Si-Bei; Xie, Zong-Zhou; Hu, Chun-Gen; Zhang, Jin-Zhi

    2016-01-01

    Auxin is a key regulator of virtually every aspect of plant growth and development from embryogenesis to senescence. Previous studies have indicated that auxin regulates these processes by controlling gene expression via a family of functionally distinct DNA-binding auxin response factors (ARFs). ARFs are likely components that confer specificity to auxin response through selection of target genes as transcription factors. They bind to auxin response DNA elements (AuxRE) in the promoters of auxin-regulated genes and either activate or repress transcription of these genes depending on a specific domain in the middle of the protein. Genetic studies have implicated various ARFs in distinct developmental processes through loss-of-function mutant analysis. Recent advances have provided information on the regulation of ARF gene expression, the role of ARFs in growth and developmental processes, protein–protein interactions of ARFs and target genes regulated by ARFs in plants. In particular, protein interaction and structural studies of ARF proteins have yielded novel insights into the molecular basis of auxin-regulated transcription. These results provide the foundation for predicting the contributions of ARF genes to the biology of other plants. PMID:26870066

  9. Extremely long life and low-cost 193nm excimer laser chamber technology for 450mm wafer multipatterning lithography

    NASA Astrophysics Data System (ADS)

    Tsushima, Hiroaki; Katsuumi, Hisakazu; Ikeda, Hiroyuki; Asayama, Takeshi; Kumazaki, Takahito; Kurosu, Akihiko; Ohta, Takeshi; Kakizaki, Kouji; Matsunaga, Takashi; Mizoguchi, Hakaru

    2014-04-01

    193nm ArF excimer lasers are widely used as light sources for the lithography process of semiconductor production. 193nm ArF exicmer lasers are expected to continue to be the main solution in photolithography, since advanced lithography technologies such as multiple patterning and Self-Aligned Double Patterning (SADP) are being developed. In order to apply these technologies to high-volume semiconductor manufacturing, the key is to reduce the total operating cost. To reduce the total operating cost, life extension of consumable part and reduction of power consumption are an important factor. The chamber life time and power consumption are a main factor to decide the total operating cost. Therefore, we have developed the new technology for extension of the chamber life time and low electricity consumption. In this paper, we will report the new technology to extend the life time of the laser chamber and to reduce the electricity consumption.

  10. Ion beam lithography system

    DOEpatents

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  11. Defect printability of ArF alternative phase-shift mask: a critical comparison of simulation and experiment

    NASA Astrophysics Data System (ADS)

    Ozawa, Ken; Komizo, Tooru; Ohnuma, Hidetoshi

    2002-07-01

    An alternative phase shift mask (alt-PSM) is a promising device for extending optical lithography to finer design rules. There have been few reports, however, on the mask's ability to identify phase defects. We report here an alt-PSM of a single-trench type with undercut for ArF exposure, with programmed phase defects used to evaluate defect printability by measuring aerial images with a Zeiss MSM193 measuring system. The experimental results are simulated using the TEMPEST program. First, a critical comparison of the simulation and the experiment is conducted. The actual measured topographies of quartz defects are used in the simulation. Moreover, a general simulation study on defect printability using an alt-PSM for ArF exposure is conducted. The defect dimensions, which produce critical CD errors, are determined by simulation that takes into account the full 3-dimensional structure of phase defects as well as a simplified structure. The critical dimensions of an isolated bump defect identified by the alt-PSM of a single-trench type with undercut for ArF exposure are 300 nm in bottom dimension and 74 degrees in height (phase) for the real shape, where the depth of wet-etching is 100 nm and the CD error limit is +/- 5 percent.

  12. Analysis of laser durability of CaF2 for optical lithography

    NASA Astrophysics Data System (ADS)

    Grabosch, Guenter; Parthier, Lutz; Natura, Ute; Poehl, Karin; Letz, Martin; Muehlig, Christian; Knapp, Konrad

    2005-02-01

    Photolithography is a key technolgoy for the production of semiconductor devices. It supports the continuing trend towards higher integration density of microelectronic devices. The material used in the optics of lithography tools has to be of extremely high quality to ensure the high demand of the imaging. Due to its properties CaF2 is a material of choice for the application in lithography systems. Because of the compexity of the lithography tools single lenses or lens system modules cannot be replaced. Therefore the lens material has to last the full lifetime of the tool without major degradation. According to the roadmap for next generation of optical lithography tools, like immersion lithography, the requirements of CaF2 for radiation hardness are increasing considerably. We will present a detailed analysis of the key factors influencing the laser hardness covering the complete production chain. Some aspects of the evaluation methods for testing CaF2 laser durability will be presented.

  13. Pellicle choice for 193-nm immersion lithography photomasks

    NASA Astrophysics Data System (ADS)

    Cotte, Eric P.; Haessler, Ruediger; Utess, Benno; Antesberger, Gunter; Kromer, Frank; Teuber, Silvio

    2004-12-01

    An assessment of the mechanical performance of pellicles from different vendors was performed. Pellicle-induced distortions were experimentally measured and numerical simulations were run to predict what improvements were desirable. The experiments included mask registration measurements before and after pellicle mounting for three of the major pellicle suppliers, and adhesive gasket material properties characterization for previously untested samples. The finite element numerical simulations were verified via comparison to experimental data for pellicles with known frame bows, measured by the vendor. The models were extended to simulate the effect of the chucking of reticles in an exposure tool, as well as the various magnification correction schemes available in such tools. Results were compared to ITRS requirements to evaluate performances. This study enables the AMTC to give important feedback to pellicle suppliers and make proper recommendations to customers for future pellicle choices.

  14. Resist component leaching in 193-nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Dammel, Ralph R.; Pawlowski, Georg; Romano, Andrew; Houlihan, Frank M.; Kim, Woo-Kyu; Sakamuri, Raj; Abdallah, David

    2005-05-01

    The leaching of ionic PAGs from model resist films into a static water volume is shown to follow first order kinetics. From the saturation concentration and the leaching time constant, the leaching rate at time zero is obtained which is a highly relevant parameter for evaluating lens contamination potential. The levels of leaching seen in the model resists generally exceed both static and rate-based dynamic leaching specifications. The dependence of leaching on anion structure shows that more hydrophobic anions have lower saturation concentration; however, the time constant of leaching increases with anion chain length. Thus in our model system, the initial leaching rates of nonaflate and PFOS anions are identical. Investigation of a water pre-rinse process unexpectedly showed that some PAG can still be leached from the surface although the pre-rinse times greatly exceeded the times required for saturation of the leaching phenomenon, which are expected to correspond to complete depletion of leachable PAG from the surface. A model is proposed to explain this phenomenon through re-organization of the surface as the surface energy changes during the air/water/air contact sequence of the pre-rinse process.

  15. Carbon dioxide gas purification and analytical measurement for leading edge 193nm lithography

    NASA Astrophysics Data System (ADS)

    Riddle Vogt, Sarah; Landoni, Cristian; Applegarth, Chuck; Browning, Matt; Succi, Marco; Pirola, Simona; Macchi, Giorgio

    2015-03-01

    The use of purified carbon dioxide (CO2) has become a reality for leading edge 193 nm immersion lithography scanners. Traditionally, both dry and immersion 193 nm lithographic processes have constantly purged the optics stack with ultrahigh purity compressed dry air (UHPCDA). CO2 has been utilized for a similar purpose as UHPCDA. Airborne molecular contamniation (AMC) purification technologies and analytical measurement methods have been extensively developed to support the Lithography Tool Manufacturers purity requirements. This paper covers the analytical tests and characterizations carried out to assess impurity removal from 3.0 N CO2 (beverage grade) for its final utilization in 193 nm and EUV scanners.

  16. High-index nanocomposite photoresist for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Bae, Woo Jin; Trikeriotis, Makros; Rodriguez, Robert; Zettel, Michael F.; Piscani, Emil; Ober, Christopher K.; Giannelis, Emmanuel P.; Zimmerman, Paul

    2009-03-01

    In immersion lithography, high index fluids are used to increase the numerical aperture (NA) of the imaging system and decrease the minimum printable feature size. Water has been used in first generation immersion lithography at 193 nm to reach the 45 nm node, but to reach the 38 and 32 nm nodes, fluids and resists with a higher index than water are needed. A critical issue hindering the implementation of 193i at the 32 nm node is the availability of high refractive index (n > 1.8) and low optical absorption fluids and resists. It is critical to note that high index resists are necessary only when a high refractive index fluid is in use. High index resist improves the depth of focus (DOF) even without high index fluids. In this study, high refractive index nanoparticles have been synthesized and introduced into a resist matrix to increase the overall refractive index. The strategy followed is to synthesize PGMEA-soluble nanoparticles and then disperse them into a 193 nm resist. High index nanoparticles 1-2 nm in diameter were synthesized by a combination of hydrolysis and sol-gel methods. A ligand exchange method was used, allowing the surface of the nanoparticles to be modified with photoresist-friendly moieties to help them disperse uniformly in the resist matrix. The refractive index and ultraviolet absorbance were measured to evaluate the quality of next generation immersion lithography resist materials.

  17. Thirty years of lithography simulation

    NASA Astrophysics Data System (ADS)

    Mack, Chris A.

    2005-05-01

    Thirty years ago Rick Dill and his team at IBM published the first account of lithography simulation - the accurate description of semiconductor optical lithography by mathematical equations. Since then, lithography simulation has grown dramatically in importance in four important areas: as a research tool, as a development tool, as a manufacturing tool, and as a learning tool. In this paper, the history of lithography simulations is traced from its roots to today"s indispensable tools for lithographic technology development. Along the way, an attempt will be made to define the true value of lithography simulation to the semiconductor industry.

  18. Beam pen lithography

    NASA Astrophysics Data System (ADS)

    Huo, Fengwei; Zheng, Gengfeng; Liao, Xing; Giam, Louise R.; Chai, Jinan; Chen, Xiaodong; Shim, Wooyoung; Mirkin, Chad A.

    2010-09-01

    Lithography techniques are currently being developed to fabricate nanoscale components for integrated circuits, medical diagnostics and optoelectronics. In conventional far-field optical lithography, lateral feature resolution is diffraction-limited. Approaches that overcome the diffraction limit have been developed, but these are difficult to implement or they preclude arbitrary pattern formation. Techniques based on near-field scanning optical microscopy can overcome the diffraction limit, but they suffer from inherently low throughput and restricted scan areas. Highly parallel two-dimensional, silicon-based, near-field scanning optical microscopy aperture arrays have been fabricated, but aligning a non-deformable aperture array to a large-area substrate with near-field proximity remains challenging. However, recent advances in lithographies based on scanning probe microscopy have made use of transparent two-dimensional arrays of pyramid-shaped elastomeric tips (or `pens') for large-area, high-throughput patterning of ink molecules. Here, we report a massively parallel scanning probe microscopy-based approach that can generate arbitrary patterns by passing 400-nm light through nanoscopic apertures at each tip in the array. The technique, termed beam pen lithography, can toggle between near- and far-field distances, allowing both sub-diffraction limit (100 nm) and larger features to be generated.

  19. Native Language Immersion.

    ERIC Educational Resources Information Center

    Reyhner, Jon

    This paper describes the benefits of indigenous mother tongue immersion programs, examining the Total Physical Response approach to immersion for beginning learners and focusing on the development of Maori and Hawaiian mother tongue language immersion programs. The paper discusses the importance of immersing students in a language-risk…

  20. Neutral particle lithography

    NASA Astrophysics Data System (ADS)

    Craver, Barry Paul

    Neutral particle lithography (NPL) is a high resolution, proximity exposure technique where a broad beam of energetic neutral particles floods a stencil mask and transmitted beamlets transfer the mask pattern to resist on a substrate, such that each feature is printed in parallel, rather than in the serial manner of electron beam lithography. It preserves the advantages of ion beam lithography (IBL), including extremely large depth-of-field, sub-5 nm resist scattering, and the near absence of diffraction, yet is intrinsically immune to charge-related artifacts including line-edge roughness and pattern placement errors due to charge accumulation on the mask and substrate. In our experiments, a neutral particle beam is formed by passing an ion beam (e.g., 30 keV He+) through a high pressure helium gas cell (e.g., 100 mTorr) to convert the ions to energetic neutrals through charge transfer scattering. The resolution of NPL is generally superior to that of IBL for applications involving insulating substrates, large proximity gaps, and ultra-small features. High accuracy stepped exposures with energetic neutral particles, where magnetic or electrostatic deflection is impossible, have been obtained by clamping the mask to the wafer, setting the proximity gap with a suitable spacer, and mechanically inclining the mask/wafer stack relative to the beam. This approach is remarkably insensitive to vibration and thermal drift; nanometer scale image offsets have been obtained with +/-2 nm placement accuracy for experiments lasting over one hour. Using this nanostepping technique, linewidth versus dose curves were obtained, from which the NPL lithographic blur was determined as 4.4+/-1.4 nm (1sigma), which is 2-3 times smaller than the blur of electron beam lithography. Neutral particle lithography has the potential to form high density, periodic patterns with sub-10 nm resolution.

  1. The small GTPase Arf1 modulates mitochondrial morphology and function

    PubMed Central

    Ackema, Karin B; Hench, Jürgen; Böckler, Stefan; Wang, Shyi Chyi; Sauder, Ursula; Mergentaler, Heidi; Westermann, Benedikt; Bard, Frédéric; Frank, Stephan; Spang, Anne

    2014-01-01

    The small GTPase Arf1 plays critical roles in membrane traffic by initiating the recruitment of coat proteins and by modulating the activity of lipid-modifying enzymes. Here, we report an unexpected but evolutionarily conserved role for Arf1 and the ArfGEF GBF1 at mitochondria. Loss of function of ARF-1 or GBF-1 impaired mitochondrial morphology and activity in Caenorhabditis elegans. Similarly, mitochondrial defects were observed in mammalian and yeast cells. In Saccharomyces cerevisiae, aberrant clusters of the mitofusin Fzo1 accumulated in arf1-11 mutants and were resolved by overexpression of Cdc48, an AAA-ATPase involved in ER and mitochondria-associated degradation processes. Yeast Arf1 co-fractionated with ER and mitochondrial membranes and interacted genetically with the contact site component Gem1. Furthermore, similar mitochondrial abnormalities resulted from knockdown of either GBF-1 or contact site components in worms, suggesting that the role of Arf1 in mitochondrial functioning is linked to ER–mitochondrial contacts. Thus, Arf1 is involved in mitochondrial homeostasis and dynamics, independent of its role in vesicular traffic. PMID:25190516

  2. Colloidal pen lithography.

    PubMed

    Xue, Mianqi; Cai, Xiaojing; Chen, Ghenfu

    2015-02-01

    Colloidal pen lithography, a low-cost, high-throughput scanning probe contact printing method, has been developed, which is based on self-assembled colloidal arrays embedded in a soft elastomeric stamp. Patterned protein arrays are demonstrated using this method, with a feature size ranging from 100 nm to several micrometers. A brief study into the specificity reorganization of protein gives evidence for the feasibility of this method for writing protein chips. PMID:25288364

  3. Industrial strength lithography APC

    NASA Astrophysics Data System (ADS)

    Ausschnitt, Christopher P.; Barker, Brian; Muth, William A.; Postiglione, Marc; Walentosky, Thomas

    2003-06-01

    Fully automated semiconductor manufacturing, becoming a reality with the ramping of 300mm fabricators throughout the world, demands the integration of advanced process control (APC). APC is particularly critical for the lithography sector, whose performance correlates to yield and whose productivity often gates the line. We describe the implementation of a comprehensive lithography APC system at the IBM Center for Nanoelectronics, a 300mm manufacturing and development facility. The base lithography APC function encompasses closed-loop run-to-run control of exposure tool inputs to sustain the overlay and critical dimension outputs consistent with product specifications. Automation demands that no decision regarding the appropriate exposure tool run-time settings be left to human judgment. For each lot, the APC system provides optimum settings based on existing data derived from pertinent process streams. In the case where insufficient prior data exists, the APC system either invokes the appropriate combination of send ahead processing and/or pre-determined defaults. We give specific examples of the application of APC to stitched field and dose control, and quantify its technical benefits. Field matching < 0.1 ppm and critical dimension control < 2.5% is achieved among multiple exposure tools and masks.

  4. Nucleostemin stabilizes ARF by inhibiting the ubiquitin ligase ULF.

    PubMed

    Lo, D; Zhang, Y; Dai, M-S; Sun, X-X; Zeng, S X; Lu, H

    2015-03-26

    Upregulated expression of nucleolar GTPase nucleostemin (NS) has been associated with increased cellular proliferation potential and tumor malignancy during cancer development. Recent reports attribute the growth regulatory effects of NS protein to its role in facilitating ribosome production. However, the oncogenic potential of NS remains unclear, as imbalanced levels of NS have been reported to exert growth inhibitory effect by modulating p53 tumor-suppressor activity. It also remains in questions if aberrant NS levels might have a p53-independent role in regulation of cell proliferation and growth. In this study, we performed affinity purification and mass spectrometry analysis to explore protein-protein interactions influencing NS growth regulatory properties independently of p53 tumor suppressor. We identified the alternative reading frame (ARF) protein as a key protein associating with NS and further verified the interaction through in vitro and in vivo assays. We demonstrated that NS is able to regulate cell cycle progression by regulating the stability of the ARF tumor suppressor. Furthermore, overexpression of NS suppressed ARF polyubiquitination by its E3 ligase Ubiquitin Ligase for ARF and elongated its half-life, whereas knockdown of NS led to the decrease of ARF levels. Also, we found that NS can enhance NPM stabilization of ARF. Thus, we propose that in the absence of p53, ARF can be stabilized by NS and nucleophosmin to serve as an alternative tumor-suppressor surveillance, preventing potential cellular transformation resulting from the growth-inducing effects of NS overexpression. PMID:24769896

  5. Arf6 mediates Schwann cell differentiation and myelination.

    PubMed

    Torii, Tomohiro; Miyamoto, Yuki; Yamamoto, Masahiro; Ohbuchi, Katsuya; Tsumura, Hideki; Kawahara, Kazuko; Tanoue, Akito; Sakagami, Hiroyuki; Yamauchi, Junji

    2015-09-25

    During development of the peripheral nervous system (PNS), Schwann cells wrap neuronal axons, becoming the myelin sheaths that help axonal functions. While the intercellular signals controlling the myelination process between Schwann cells and peripheral neurons are well studied, the transduction of these signals in Schwann cells still remains elusive. Here, we show that Arf6, an Arf protein of the small GTPase family, is involved in promoting the myelination process. Knockdown of Arf6 with the small-interfering (si)RNA in primary Schwann cells markedly decreases dibutyl-cyclic AMP-induced myelin marker protein expression, indicating that Arf6 plays a role in differentiation-like phenotypic changes. To obtain in vivo evidence, we generated small-hairpin (sh)RNA transgenic mice targeting Arf6 for Schwann cells. Transgenic mice exhibited reduced myelin thickness compared to littermate controls, consistent with the defective myelin formation observed in the transgenic mouse-derived Schwann cell and neuronal culture system. Transgenic mice also exhibited decreased phosphorylation of myelination-related signaling molecules such as Akt kinase cascade proteins as well as downregulation of myelin marker proteins. These results suggest that signaling through Arf6 is required for Schwann cell myelination, adding Arf6 to the list of intracellular signaling molecules involved in the myelination process. PMID:26277388

  6. Microfluidic Applications of Soft Lithography

    SciTech Connect

    Rose, K A; Krulevitch, P; Hamilton, J

    2001-04-10

    The soft lithography fabrication technique was applied to three microfluidic devices. The method was used to create an original micropump design and retrofit to existing designs for a DNA manipulation device and a counter biological warfare sample preparation device. Each device presented unique and original challenges to the soft lithography application. AI1 design constraints of the retrofit devices were satisfied using PDMS devices created through variation of soft lithography methods. The micropump utilized the versatility of PDMS, creating design options not available with other materials. In all cases, the rapid processing of soft lithography reduced the fabrication time, creating faster turnaround for design modifications.

  7. Mechanism of activation of cholera toxin by ADP-ribosylation factor (ARF): both low- and high-affinity interactions of ARF with guanine nucleotides promote toxin activation.

    PubMed

    Bobak, D A; Bliziotes, M M; Noda, M; Tsai, S C; Adamik, R; Moss, J

    1990-01-30

    Activation of adenylyl cyclase by cholera toxin A subunit (CT-A) results from the ADP-ribosylation of the stimulatory guanine nucleotide binding protein (GS alpha). This process requires GTP and an endogenous guanine nucleotide binding protein known as ADP-ribosylation factor (ARF). One membrane (mARF) and two soluble forms (sARF I and sARF II) of ARF have been purified from bovine brain. Because the conditions reported to enhance the binding of guanine nucleotides by ARF differ from those observed to promote optimal activity, we sought to characterize the determinants influencing the functional interaction of guanine nucleotides with ARF. High-affinity GTP binding by sARF II (apparent KD of approximately 70 nM) required Mg2+, DMPC, and sodium cholate. sARF II, in DMPC/cholate, also enhanced CT-A ADP-ribosyltransferase activity (apparent EC50 for GTP of approximately 50 nM), although there was a delay before achievement of a maximal rate of sARF II stimulated toxin activity. The delay was abolished by incubation of sARF II with GTP at 30 degrees C before initiation of the assay. In contrast, a maximal rate of activation of toxin by sARF II, in 0.003% SDS, occurred without delay (apparent EC50 for GTP of approximately 5 microM). High-affinity GTP binding by sARF II was not detectable in SDS. Enhancement of CT-A ADP-ribosyltransferase activity by sARF II, therefore, can occur under conditions in which sARF II exhibits either a relatively low affinity or a relatively high affinity for GTP. The interaction of GTP with ARF under these conditions may reflect ways in which intracellular membrane and cytosolic environments modulate GTP-mediated activation of ARF. PMID:2111167

  8. Characterization of ARF-BP1/HUWE1 Interactions with CTCF, MYC, ARF and p53 in MYC-Driven B Cell Neoplasms

    PubMed Central

    Qi, Chen-Feng; Kim, Yong-Soo; Xiang, Shao; Abdullaev, Ziedulla; Torrey, Ted A.; Janz, Siegfried; Kovalchuk, Alexander L.; Sun, Jiafang; Chen, Delin; Cho, William C.; Gu, Wei; Morse, Herbert C.

    2012-01-01

    Transcriptional activation of MYC is a hallmark of many B cell lineage neoplasms. MYC provides a constitutive proliferative signal but can also initiate ARF-dependent activation of p53 and apoptosis. The E3 ubiquitin ligase, ARF-BP1, encoded by HUWE1, modulates the activity of both the MYC and the ARF-p53 signaling pathways, prompting us to determine if it is involved in the pathogenesis of MYC-driven B cell lymphomas. ARF-BP1 was expressed at high levels in cell lines from lymphomas with either wild type or mutated p53 but not in ARF-deficient cells. Downregulation of ARF-BP1 resulted in elevated steady state levels of p53, growth arrest and apoptosis. Co-immunoprecipitation studies identified a multiprotein complex comprised of ARF-BP1, ARF, p53, MYC and the multifunctional DNA-binding factor, CTCF, which is involved in the transcriptional regulation of MYC, p53 and ARF. ARF-BP1 bound and ubiquitylated CTCF leading to its proteasomal degradation. ARF-BP1 and CTCF thus appear to be key cofactors linking the MYC proliferative and p53-ARF apoptotic pathways. In addition, ARF-BP1 could be a therapeutic target for MYC-driven B lineage neoplasms, even if p53 is inactive, with inhibition reducing the transcriptional activity of MYC for its target genes and stabilizing the apoptosis-promoting activities of p53. PMID:22754359

  9. Ink4-Arf locus in cancer and aging.

    PubMed

    Sherr, Charles J

    2012-01-01

    Three tumor suppressor genes at the small (<50 kb) INK4-ARF (CDKN2A/B) locus on human chromosome 9p21 coordinate a signaling network that depends on the activities of the retinoblastoma (RB) protein and the p53 transcription factor. Disruption of this circuitry, frequently by codeletion of INK4-ARF, is a hallmark of cancer, begging the question of why the intimate genetic linkage of these tumor suppressor genes has been maintained in mammals despite the risk of their coinactivation. The INK4-ARF locus is not highly expressed under normal physiologic conditions in young mammals, but its induction becomes more pronounced as animals age. Notably, INK4-ARF is actively silenced en bloc in embryonic, fetal, and adult stem cells but becomes poised to respond to oncogenic stress signals as stem cells lose their self-renewal capacity and differentiate, thereby providing a potent barrier to tumor formation. Epigenetic remodeling of the locus as a whole provides a mechanism for coordinating the activities of RB and p53. A hypothesis is that the INK4-ARF locus may have evolved to physiologically restrict the self-renewal capacities and numbers of stem and progenitor cells with the attendant consequence of limiting tissue regenerative capacity, particularly as animals age. Deletion of INK4-ARF contributes to the aberrant self-renewal capacity of tumor cells and occurs frequently in many forms of human cancer. PMID:22960768

  10. Role of the tumor suppressor ARF in macrophage polarization

    PubMed Central

    Herranz, Sandra; Través, Paqui G.; Luque, Alfonso; Hortelano, Sonsoles

    2012-01-01

    The ARF locus is frequently inactivated in human cancer. The oncosuppressor ARF has indeed been described as a general sensor for different situation of cellular stress. We have previously demonstrated that ARF deficiency severely impairs inflammatory responses in vitro and in vivo, establishing a role for ARF in the regulation of innate immunity. The aim of the present work was to get further insights into the immune functions of ARF and to evaluate its possible contribution to the polarization of macrophages toward the M1 or M2 phenotype. Our results demonstrate that resting Arf−/− macrophages express high levels of Ym1 and Fizz-1, two typical markers of alternatively-activated macrophages (M2). Additionally, Arf−/− peritoneal macrophages showed an impaired response to lipopolysaccharide (a classical inducer of M1 polaryzation) and a reduced production of pro-inflammatory cytokines/chemokines. Moreover, upon stimulation with interleukin-4 (IL-4), an inducer of the M2 phenotype, well established M2 markers such as Fizz-1, Ym1 and arginase-1 were upregulated in Arf−/− as compared with wild type macrophages. Accordingly, the cytokine and chemokine profile associated with the M2 phenotype was significantly overexpressed in Arf−/− macrophages responding to IL-4. In addition, multiple pro-angiogenic factors such as VEGF and MMP-9 were also increased. In summary, these results indicate that ARF contributes to the polarization and functional plasticity of macrophages. PMID:23243586

  11. SynArfGEF is a guanine nucleotide exchange factor for Arf6 and localizes preferentially at post-synaptic specializations of inhibitory synapses.

    PubMed

    Fukaya, Masahiro; Kamata, Akifumi; Hara, Yoshinobu; Tamaki, Hideaki; Katsumata, Osamu; Ito, Naoki; Takeda, Shin'ichi; Hata, Yutaka; Suzuki, Tatsuo; Watanabe, Masahiko; Harvey, Robert J; Sakagami, Hiroyuki

    2011-03-01

    SynArfGEF, also known as BRAG3 or IQSEC3, is a member of the brefeldin A-resistant Arf-GEF/IQSEC family and was originally identified by screening for mRNA species associated with the post-synaptic density fraction. In this study, we demonstrate that synArfGEF activates Arf6, using Arf pull down and transferrin incorporation assays. Immunohistochemical analysis reveals that synArfGEF is present in somata and dendrites as puncta in close association with inhibitory synapses, whereas immunoelectron microscopic analysis reveals that synArfGEF localizes preferentially at post-synaptic specializations of symmetric synapses. Using yeast two-hybrid and pull down assays, we show that synArfGEF is able to bind utrophin/dystrophin and S-SCAM/MAGI-2 scaffolding proteins that localize at inhibitory synapses. Double immunostaining reveals that synArfGEF co-localizes with dystrophin and S-SCAM in cultured hippocampal neurons and cerebellar cortex, respectively. Both β-dystroglycan and S-SCAM were immunoprecipitated from brain lysates using anti-synArfGEF IgG. Taken together, these findings suggest that synArfGEF functions as a novel regulator of Arf6 at inhibitory synapses and associates with the dystrophin-associated glycoprotein complex and S-SCAM. PMID:21198641

  12. Bubble-Pen Lithography.

    PubMed

    Lin, Linhan; Peng, Xiaolei; Mao, Zhangming; Li, Wei; Yogeesh, Maruthi N; Rajeeva, Bharath Bangalore; Perillo, Evan P; Dunn, Andrew K; Akinwande, Deji; Zheng, Yuebing

    2016-01-13

    Current lithography techniques, which employ photon, electron, or ion beams to induce chemical or physical reactions for micro/nano-fabrication, have remained challenging in patterning chemically synthesized colloidal particles, which are emerging as building blocks for functional devices. Herein, we develop a new technique - bubble-pen lithography (BPL) - to pattern colloidal particles on substrates using optically controlled microbubbles. Briefly, a single laser beam generates a microbubble at the interface of colloidal suspension and a plasmonic substrate via plasmon-enhanced photothermal effects. The microbubble captures and immobilizes the colloidal particles on the substrate through coordinated actions of Marangoni convection, surface tension, gas pressure, and substrate adhesion. Through directing the laser beam to move the microbubble, we create arbitrary single-particle patterns and particle assemblies with different resolutions and architectures. Furthermore, we have applied BPL to pattern CdSe/ZnS quantum dots on plasmonic substrates and polystyrene (PS) microparticles on two-dimensional (2D) atomic-layer materials. With the low-power operation, arbitrary patterning and applicability to general colloidal particles, BPL will find a wide range of applications in microelectronics, nanophotonics, and nanomedicine. PMID:26678845

  13. Diamond nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Taniguchi, Jun; Tokano, Yuji; Miyamoto, Iwao; Komuro, Masanori; Hiroshima, Hiroshi

    2002-10-01

    Electron beam (EB) lithography using polymethylmethacrylate (PMMA) and oxygen gas reactive ion etching (RIE) were used to fabricate fine patterns in a diamond mould. To prevent charge-up during EB lithography, thin conductive polymer was spin-coated over the PMMA resist, yielding dented line patterns 2 μ m wide and 270 nm deep. The diamond mould was pressed into PMMA on a silicon substrate heated to 130, 150 and 170ºC at 43.6, 65.4 and 87.2 MPa. All transferred PMMA convex line patterns were 2 μ m wide. Imprinted pattern depth increased with rising temperature and pressure. PMMA patterns on diamond were transferred by the diamond mould at 150ºC and 65.4 MPa, yielding convex line patterns 2 μ m wide and 200 nm high. Direct aluminium and copper patterns were obtained using the diamond mould at room temperature and 130.8 MPa. The diamond mould is thus useful for replicating patterns on PMMA and metals.

  14. Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique

    NASA Astrophysics Data System (ADS)

    Biswas, Abani M.; Li, Jianliang; Hiserote, Jay A.; Melvin, Lawrence S., III

    2006-10-01

    Immersion lithography and multiple exposure techniques are the most promising methods to extend lithography manufacturing to the 45nm node. Although immersion lithography has attracted much attention recently as a promising optical lithography extension, it will not solve all the problems at the 45-nm node. The 'dry' option, (i.e. double exposure/etch) which can be realized with standard processing practice, will extend 193-nm lithography to the end of the current industry roadmap. Double exposure/etch lithography is expensive in terms of cost, throughput time, and overlay registration accuracy. However, it is less challenging compared to other possible alternatives and has the ability to break through the κ I barrier (0.25). This process, in combination with attenuated PSM (att-PSM) mask, is a good imaging solution that can reach, and most likely go beyond, the 45-nm node. Mask making requirements in a double exposure scheme will be reduced significantly. This can be appreciated by the fact that the separation of tightly-pitched mask into two less demanding pitch patterns will reduce the stringent specifications for each mask. In this study, modeling of double exposure lithography (DEL) with att-PSM masks to target 45-nm node is described. In addition, mask separation and implementation issues of optical proximity corrections (OPC) to improve process window are studied. To understand the impact of OPC on the process window, Fourier analysis of the masks has been carried out as well.

  15. RET masks for the final frontier of optical lithography

    NASA Astrophysics Data System (ADS)

    Chen, J. F.; van den Broeke, Douglas; Hsu, Stephen; Hsu, Michael C. W.; Laidig, Tom; Shi, Xuelong; Chen, Ting; Socha, Robert J.; Hollerbach, Uwe; Wampler, Kurt E.; Park, Jungchul; Park, Sangbong; Gronlund, Keith

    2005-06-01

    With immersion and hyper numerical aperture (NA>1) optics apply to the ITRS 2003/4 roadmap scenario (Figure 1); it is very clear that the IC manufacturing has already stepped into the final frontier of optical lithography. Today"s advanced lithography for DRAM/Flash is operating at k1 close to 0.3. The manufacturing for leading edge logic devices does not follow too far behind. Patterning at near theoretical lithography imaging limit (k1=0.25) even with hyper NA optics, the attainable aerial image contrast is marginal at best for the critical feature. Thus, one of the key objectives for low k1 lithography is to ensure the printing performance of critical features for manufacturing. Resolution enhancement technology (RET) mask in combination with hyper NA and illumination optimization is one primary candidate to enable lithography manufacturing at very low k1 factor. The use of rule-based Scattering Bars (SB) for all types of phase-shifting masks has become the de facto OPC standard since 180nm node. Model-based SB OPC method derives from interference mapping lithography (IML) has shown impressive printing result for both clear (gate) and dark field (contact and via) mask types. There are four basic types of RET mask candidates for 65nm node, namely, alternating phase-shifting mask (altPSM), attenuated PSM (attPSM), chromeless phase lithography (CPL) PSM, and double dipole lithography (DDL) using binary chrome mask. The wafer printing performances from CPL and DDL have proven both are strong candidates for 45nm nodes. One concern for using RET masks to target 45 nm nodes is likely to be the scaling for SB dimension for 4X mask. To assist imaging effectively with high NA, SB cannot be too small in width. However, for SB to be larger than sub-resolution, they can easily cause unwanted SB printing. The other major concern is the unwanted side lobe printing. This may occur for semi-dense pitch ranges under high NA and strong off-axis-illumination (OAI). Looking ahead

  16. Diaphragmatic function during immersion.

    PubMed

    Minh, V D; Dolan, G F; Linaweaver, P G; Friedman, P J; Konopka, R G; Brach, B B

    1977-08-01

    Diaphragmatic function during immersion to midneck level was studied in upright mongrel dogs, using constant electrophrenic stimulation. Effectiveness of diaphragmatic contraction was analyzed in terms of inspired volume (VT) (with airways open), and change in intrathoracic pressure (Pmus) (with the respiratory system occluded). Hydrostatic compression of the immersed body decreased functional residual capacity (FRC) to 55% base-line value (FRCO), resulting in a 2.8-fold increase in Pmus. In spite of this Pmus increase, VT often decreased during immersion, averaging only 83% VTO (base-line value in air). Hence, immersion was associated with a marked stiffening of the respiratory system. The Pmus increase during immersion persisted after restoration of FRC to FRCO, and was related to diaphragmatic length being greater in water than in air under condition of iso-lung volume. In all, there were three factors affecting diaphragmatic function during immersion: FRC reduction, change in thoracic configuration, and stiffening of the respiratory system. PMID:893286

  17. Cryogenic immersion microscope

    DOEpatents

    Le Gros, Mark; Larabell, Carolyn A.

    2010-12-14

    A cryogenic immersion microscope whose objective lens is at least partially in contact with a liquid reservoir of a cryogenic liquid, in which reservoir a sample of interest is immersed is disclosed. When the cryogenic liquid has an index of refraction that reduces refraction at interfaces between the lens and the sample, overall resolution and image quality are improved. A combination of an immersion microscope and x-ray microscope, suitable for imaging at cryogenic temperatures is also disclosed.

  18. Neon Ion Beam Lithography (NIBL).

    PubMed

    Winston, Donald; Manfrinato, Vitor R; Nicaise, Samuel M; Cheong, Lin Lee; Duan, Huigao; Ferranti, David; Marshman, Jeff; McVey, Shawn; Stern, Lewis; Notte, John; Berggren, Karl K

    2011-10-12

    Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm(2), ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography. PMID:21899279

  19. Advances in Nanoimprint Lithography.

    PubMed

    Traub, Matthew C; Longsine, Whitney; Truskett, Van N

    2016-06-01

    Nanoimprint lithography (NIL), a molding process, can replicate features <10 nm over large areas with long-range order. We describe the early development and fundamental principles underlying the two most commonly used types of NIL, thermal and UV, and contrast them with conventional photolithography methods used in the semiconductor industry. We then describe current advances toward full commercial industrialization of UV-curable NIL (UV-NIL) technology for integrated circuit production. We conclude with brief overviews of some emerging areas of research, from photonics to biotechnology, in which the ability of NIL to fabricate structures of arbitrary geometry is providing new paths for development. As with previous innovations, the increasing availability of tools and techniques from the semiconductor industry is poised to provide a path to bring these innovations from the lab to everyday life. PMID:27070763

  20. Programmable imprint lithography template

    DOEpatents

    Cardinale, Gregory F.; Talin, Albert A.

    2006-10-31

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  1. The Role of ARF6 in Biliary Atresia

    PubMed Central

    Glessner, Joseph; Ashokkumar, Chethan; Ranganathan, Sarangarajan; Min, Jun; Higgs, Brandon W.; Sun, Qing; Haberman, Kimberly; Schmitt, Lori; Vilarinho, Silvia; Mistry, Pramod K.; Vockley, Gerard; Dhawan, Anil; Gittes, George K.; Hakonarson, Hakon; Jaffe, Ronald; Subramaniam, Shankar; Shin, Donghun; Sindhi, Rakesh

    2015-01-01

    Background & Aims Altered extrahepatic bile ducts, gut, and cardiovascular anomalies constitute the variable phenotype of biliary atresia (BA). Methods To identify potential susceptibility loci, Caucasian children, normal (controls) and with BA (cases) at two US centers were compared at >550000 SNP loci. Systems biology analysis was carried out on the data. In order to validate a key gene identified in the analysis, biliary morphogenesis was evaluated in 2-5-day post-fertilization zebrafish embryos after morpholino-antisense oligonucleotide knockdown of the candidate gene ADP ribosylation factor-6 (ARF6, Mo-arf6). Results Among 39 and 24 cases at centers 1 and 2, respectively, and 1907 controls, which clustered together on principal component analysis, the SNPs rs3126184 and rs10140366 in a 3’ flanking enhancer region for ARF6 demonstrated higher minor allele frequencies (MAF) in each cohort, and 63 combined cases, compared with controls (0.286 vs. 0.131, P = 5.94x10-7, OR 2.66; 0.286 vs. 0.13, P = 5.57x10-7, OR 2.66). Significance was enhanced in 77 total cases, which included 14 additional BA genotyped at rs3126184 only (p = 1.58x10-2, OR = 2.66). Pathway analysis of the 1000 top-ranked SNPs in CHP cases revealed enrichment of genes for EGF regulators (p<1 x10-7), ERK/MAPK and CREB canonical pathways (p<1 x10-34), and functional networks for cellular development and proliferation (p<1 x10-45), further supporting the role of EGFR-ARF6 signaling in BA. In zebrafish embryos, Mo-arf6 injection resulted in a sparse intrahepatic biliary network, several biliary epithelial cell defects, and poor bile excretion to the gall bladder compared with uninjected embryos. Biliary defects were reproduced with the EGFR-blocker AG1478 alone or with Mo-arf6 at lower doses of each agent and rescued with arf6 mRNA. Conclusions The BA-associated SNPs identify a chromosome 14q21.3 susceptibility locus encompassing the ARF6 gene. arf6 knockdown in zebrafish implicates early biliary

  2. Expression of the Arf tumor suppressor gene is controlled by Tgfβ2 during development

    PubMed Central

    Freeman-Anderson, Natalie E.; Zheng, Yanbin; McCalla-Martin, Amy C.; Treanor, Louise M.; Zhao, Yi D.; Garfin, Phillip M.; He, Tong-Chuan; Mary, Michelle N.; Thornton, J. Derek; Anderson, Colleen; Gibbons, Melissa; Saab, Raya; Baumer, Shannon H.; Cunningham, John M.; Skapek, Stephen X.

    2009-01-01

    Summary The Arf tumor suppressor (also known as Cdkn2a) acts as an oncogene sensor induced by `abnormal' mitogenic signals in incipient cancer cells. It also plays a crucial role in embryonic development: newborn mice lacking Arf are blind due to a pathological process resembling severe persistent hyperplastic primary vitreous (PHPV), a human eye disease. The cell-intrinsic mechanism implied in the oncogene sensor model seems unlikely to explain Arf regulation during embryo development. Instead, transforming growth factor β2 (Tgfβ2) might control Arf expression, as we show that mice lacking Tgfβ2 have primary vitreous hyperplasia similar to Arf-/- mice. Consistent with a potential linear pathway, Tgfβ2 induces Arf transcription and p19Arf expression in cultured mouse embryo fibroblasts (MEFs); and Tgfβ2-dependent cell cycle arrest in MEFs is maintained in an Arf-dependent manner. Using a new model in which Arf expression can be tracked by β-galactosidase activity in ArflacZ/+ mice, we show that Tgfβ2 is required for Arf transcription in the developing vitreous as well as in the cornea and the umbilical arteries, two previously unrecognized sites of Arf expression. Chemical and genetic strategies show that Arf promoter induction depends on Tgfβ receptor activation of Smad proteins; the induction correlates with Smad2 phosphorylation in MEFs and Arf-expressing cells in vivo. Chromatin immunoprecipitation shows that Smads bind to genomic DNA proximal to Arf exon 1β. In summary, Tgfβ2 and p19Arf act in a linear pathway during embryonic development. We present the first evidence that p19Arf expression can be coupled to extracellular cues in normal cells and suggest a new mechanism for Arf control in tumor cells. PMID:19465598

  3. Localization and characterization of the human ADP-ribosylation factor 5 (ARF5) gene

    SciTech Connect

    McGuire, R.E. |; Daiger, S.P.; Green, E.D.

    1997-05-01

    ADP-ribosylation factor 5 (ARF5) is a member of the ARF gene family. The ARF proteins stimulate the in vitro ADP-ribosyltransferase activity of cholera toxin and appear to play a role in vesicular trafficking in vivo. We have mapped ARF5, one of the six known mammalian ARF genes, to a well-defined yeast artificial chromosome contig on human chromosome 7q31.3. In addition, we have isolated and sequenced an {approximately}3.2-kb genomic segment that contains the entire ARF5 coding region, revealing the complete intron-exon structure of the gene. With six coding exons and five introns, the genomic structure of ARF5 is unique among the mammalian ARF genes and provides insight about the evolutionary history of this ancient gene family. 20 refs., 2 figs., 1 tab.

  4. p53 and ARF: Unexpected players in autophagy

    PubMed Central

    Balaburski, Gregor M.; Hontz, Robert D.; Murphy, Maureen E.

    2010-01-01

    p53 and ARF are well-established tumor suppressor proteins that function together in the negative regulation of cancer. Recently, both of these proteins were found to play surprising roles in autophagy. Autophagy (“self-eating”) is a critical response of eukaryotic cells to metabolic and other stress. During this process, portions of the cytosol are sequestered into characteristic double membrane vesicles that are delivered to the lysosome for degradation, leading to the release of free amino acids and subsequent survival. The mechanisms whereby p53 and ARF control autophagy are only now becoming elucidated. An emerging question is whether we can develop metabolic poisons that preferentially destroy tumor cells depending on their reliance on autophagy for survival, and on their p53 and ARF status. PMID:20303758

  5. Human ARF4 expression rescues sec7 mutant yeast cells.

    PubMed Central

    Deitz, S B; Wu, C; Silve, S; Howell, K E; Melançon, P; Kahn, R A; Franzusoff, A

    1996-01-01

    Vesicle-mediated traffic between compartments of the yeast secretory pathway involves recruitment of multiple cytosolic proteins for budding, targeting, and membrane fusion events. The SEC7 gene product (Sec7p) is a constituent of coat structures on transport vesicles en route to the Golgi complex in the yeast Saccharomyces cerevisiae. To identify mammalian homologs of Sec7p and its interacting proteins, we used a genetic selection strategy in which a human HepG2 cDNA library was transformed into conditional-lethal yeast sec7 mutants. We isolated several clones capable of rescuing sec7 mutant growth at the restrictive temperature. The cDNA encoding the most effective suppressor was identified as human ADP ribosylation factor 4 (hARF4), a member of the GTPase family proposed to regulate recruitment of vesicle coat proteins in mammalian cells. Having identified a Sec7p-interacting protein rather than the mammalian Sec7p homolog, we provide evidence that hARF4 suppressed the sec7 mutation by restoring secretory pathway function. Shifting sec7 strains to the restrictive temperature results in the disappearance of the mutant Sec7p cytosolic pool without apparent changes in the membrane-associated fraction. The introduction of hARF4 to the cells maintained the balance between cytosolic and membrane-associated Sec7p pools. These results suggest a requirement for Sec7p cycling on and off of the membranes for cell growth and vesicular traffic. In addition, overexpression of the yeast GTPase-encoding genes ARF1 and ARF2, but not that of YPT1, suppressed the sec7 mutant growth phenotype in an allele-specific manner. This allele specificity indicates that individual ARFs are recruited to perform two different Sec7p-related functions in vesicle coat dynamics. PMID:8668142

  6. SmARF8, a transcription factor involved in parthenocarpy in eggplant.

    PubMed

    Du, Liming; Bao, Chonglai; Hu, Tianhua; Zhu, Qinmei; Hu, Haijiao; He, Qunyan; Mao, Weihai

    2016-02-01

    Parthenocarpic fruit is a very attractive trait for consumers and especially in eggplants where seeds can lead to browning of the flesh and bitterness. However, the molecular mechanisms underlying parthenocarpy in eggplant still remain unknown. Some auxin response factors have been previously shown in model species, such as Arabidopsis and tomato, to play an important role in such a process. Here, we have identified a natural parthenocarpic mutant and showed that ARF8 from eggplant (SmARF8), is down-regulated in buds compared to wild-type plants. Further characterization of SmARF8 showed that it is a nuclear protein and an active transcriptional regulator. We determined that amino acids 629-773 of SmARF8 act as the transcriptional activation domain, the C terminus of SmARF8 is the protein-binding domain, and that SmARF8 might form homodimers. Expression analysis in eggplant showed that SmARF8 is expressed ubiquitously in all tissues and organs and is responsive to auxin. Eggplant transgenic lines harboring RNA interference of SmARF8 exhibited parthenocarpy in unfertilized flowers, suggesting that SmARF8 negatively regulates fruit initiation. Interestingly, SmARF8-overexpressing Arabidopsis lines also induced parthenocarpy. These results indicate that SmARF8 could affect the dimerization of auxin/indole acetic acid repressors with SmARF8 via domains III and IV and thus induce fruit development. Furthermore, the introduction of SmARF8 full-length cDNA could partially complement the parthenocarpic phenotypes in Arabidopsis arf8-1 and arf8-4 mutants. Collectively, our results demonstrate that SmARF8 may act as a key negative regulator involved in parthenocarpic fruit development of eggplant. These findings give more insights into the conserved mechanisms leading to parthenocarpy in which auxin signaling plays a pivotal role, and provide potential target for eggplant breeding. PMID:26174736

  7. Aspergillus nidulans ArfB Plays a Role in Endocytosis and Polarized Growth ▿ †

    PubMed Central

    Lee, Soo Chan; Schmidtke, Sabrina N.; Dangott, Lawrence J.; Shaw, Brian D.

    2008-01-01

    Filamentous fungi undergo polarized growth throughout most of their life cycles. The Spitzenkörper is an apical organelle composed primarily of vesicles that is unique to filamentous fungi and is likely to act as a vesicle supply center for tip growth. Vesicle assembly and trafficking are therefore important for hyphal growth. ADP ribosylation factors (Arfs), a group of small GTPase proteins, play an important role in nucleating vesicle assembly. Little is known about the role of Arfs in filamentous hyphal growth. We found that Aspergillus nidulans is predicted to encode six Arf family proteins. Analysis of protein sequence alignments suggests that A. nidulans ArfB shares similarity with ARF6 of Homo sapiens and Arf3p of Saccharomyces cerevisiae. An arfB null allele (arfB disrupted by a transposon [arfB::Tn]) was characterized by extended isotropic growth of germinating conidia followed by cell lysis or multiple, random germ tube emergence, consistent with a failure to establish polarity. The mutant germ tubes and hyphae that do form initially meander abnormally off of the axis of polarity and frequently exhibit dichotomous branching at cell apices, consistent with a defect in polarity maintenance. FM4-64 staining of the arfB::Tn strain revealed that another phenotypic characteristic seen for arfB::Tn is a reduction and delay in endocytosis. ArfB is myristoylated at its N terminus. Green fluorescent protein-tagged ArfB (ArfB::GFP) localizes to the plasma membrane and endomembranes and mutation (ArfBG2A::GFP) of the N-terminal myristoylation motif disperses the protein to the cytoplasm rather than to the membranes. These results demonstrate that ArfB functions in endocytosis to play important roles in polarity establishment during isotropic growth and polarity maintenance during hyphal extension. PMID:18539885

  8. LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

    NASA Astrophysics Data System (ADS)

    Cantu, Pietro; Baldi, Livio; Piacentini, Paolo; Sytsma, Joost; Le Gratiet, Bertrand; Gaugiran, Stéphanie; Wong, Patrick; Miyashita, Hiroyuki; Atzei, Luisa R.; Buch, Xavier; Verkleij, Dick; Toublan, Olivier; Perez-Murano, Francesco; Mecerreyes, David

    2010-04-01

    In 2009 a new European initiative on Double Patterning and Double Exposure lithography process development was started in the framework of the ENIAC Joint Undertaking. The project, named LENS (Lithography Enhancement Towards Nano Scale), involves twelve companies from five different European Countries (Italy, Netherlands, France, Belgium Spain; includes: IC makers (Numonyx and STMicroelectronics), a group of equipment and materials companies (ASML, Lam Research srl, JSR, FEI), a mask maker (Dai Nippon Photomask Europe), an EDA company (Mentor Graphics) and four research and development institutes (CEA-Leti, IMEC, Centro Nacional de Microelectrónica, CIDETEC). The LENS project aims to develop and integrate the overall infrastructure required to reach patterning resolutions required by 32nm and 22nm technology nodes through the double patterning and pitch doubling technologies on existing conventional immersion exposure tools, with the purpose to allow the timely development of 32nm and 22nm technology nodes for memories and logic devices, providing a safe alternative to EUV, Higher Refraction Index Fluids Immersion Lithography and maskless lithography, which appear to be still far from maturity. The project will cover the whole lithography supply chain including design, masks, materials, exposure tools, process integration, metrology and its final objective is the demonstration of 22nm node patterning on available 1.35 NA immersion tools on high complexity mask set.

  9. Extreme ultraviolet lithography machine

    DOEpatents

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  10. Nanowire lithography on silicon.

    PubMed

    Colli, Alan; Fasoli, Andrea; Pisana, Simone; Fu, Yongqing; Beecher, Paul; Milne, William I; Ferrari, Andrea C

    2008-05-01

    Nanowire lithography (NWL) uses nanowires (NWs), grown and assembled by chemical methods, as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that SiO2 NWs are a simple and compatible system to implement NWL on crystalline silicon and fabricate a wide range of architectures and devices. Planar field-effect transistors made of a single SOI-NW channel exhibit a contact resistance below 20 kOmega and scale with the channel width. Further, we assess the electrical response of NW networks obtained using a mask of SiO2 NWs ink-jetted from solution. The resulting conformal network etched into the underlying wafer is monolithic, with single-crystalline bulk junctions; thus no difference in conductivity is seen between a direct NW bridge and a percolating network. We also extend the potential of NWL into the third dimension, by using a periodic undercutting that produces an array of vertically stacked NWs from a single NW mask. PMID:18386934

  11. Scanning probe nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Dinelli, F.; Menozzi, C.; Baschieri, P.; Facci, P.; Pingue, P.

    2010-02-01

    The present paper reports on a novel lithographic approach at the nanoscale level, which is based on scanning probe microscopy (SPM) and nanoimprint lithography (NIL). The experimental set-up consists of an atomic force microscope (AFM) operated via software specifically developed for the purpose. In particular, this software allows one to apply a predefined external load for a given lapse of time while monitoring in real-time the relative distance between the tip and the sample as well as the normal and lateral force during the embossing process. Additionally, we have employed AFM tips sculptured by means of focused ion beam in order to create indenting tools of the desired shape. Anti-sticking layers can also be used to functionalize the tips if one needs to investigate the effects of different treatments on the indentation and de-molding processes. The lithographic capabilities of this set-up are demonstrated on a polystyrene NIL-patterned sample, where imprinted features have been obtained upon using different normal load values for increasing time intervals, and on a thermoplastic polymer film, where the imprint process has been monitored in real-time.

  12. Demonstration of lithography patterns using reflective e-beam direct write

    NASA Astrophysics Data System (ADS)

    Freed, Regina; Sun, Jeff; Brodie, Alan; Petric, Paul; McCord, Mark; Ronse, Kurt; Haspeslagh, Luc; Vereecke, Bart

    2011-04-01

    Traditionally, e-beam direct write lithography has been too slow for most lithography applications. E-beam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for high volume wafer processing. For this work, we report on the development and current status of a new maskless, direct write e-beam lithography tool which has the potential for high volume lithography at and below the 22 nm technology node. A Reflective Electron Beam Lithography (REBL) tool is being developed for high throughput electron beam direct write maskless lithography. The system is targeting critical patterning steps at the 22 nm node and beyond at a capital cost equivalent to conventional lithography. Reflective Electron Beam Lithography incorporates a number of novel technologies to generate and expose lithographic patterns with a throughput and footprint comparable to current 193 nm immersion lithography systems. A patented, reflective electron optic or Digital Pattern Generator (DPG) enables the unique approach. The Digital Pattern Generator is a CMOS ASIC chip with an array of small, independently controllable lens elements (lenslets), which act as an array of electron mirrors. In this way, the REBL system is capable of generating the pattern to be written using massively parallel exposure by ~1 million beams at extremely high data rates (~ 1Tbps). A rotary stage concept using a rotating platen carrying multiple wafers optimizes the writing strategy of

  13. Feasibility study of optical/e-beam complementary lithography

    NASA Astrophysics Data System (ADS)

    Hohle, Christoph; Choi, Kang-Hoon; Freitag, Martin; Gutsch, Manuela; Jaschinsky, Philipp; Kahlenberg, Frank; Klein, Christof; Klikovits, Jan; Paul, Jan; Rudolph, Matthias; Thrun, Xaver

    2012-03-01

    Using electron beam direct write (EBDW) as a complementary approach together with standard optical lithography at 193nm or EUV wavelength has been proposed only lately and might be a reasonable solution for low volume CMOS manufacturing and special applications as well as design rule restrictions. Here, the high throughput of the optical litho can be combined with the high resolution and the high flexibility of the e-beam by using a mix & match approach (Litho- Etch-Litho-Etch, LELE). Complementary Lithography is mainly driven by special design requirements for unidirectional (1-D gridded) Manhattan type design layouts that enable scaling of advanced logic chips. This requires significant data prep efforts such as layout splitting. In this paper we will show recent results of Complementary Lithography using 193nm immersion generated 50nm lines/space pattern addressing the 32nm logic technology node that were cut with electron beam direct write. Regular lines and space arrays were patterned at GLOBALFOUNDRIES Dresden and have been cut in predefined areas using a VISTEC SB3050DW e-beam direct writer (50KV Variable Shaped Beam) at Fraunhofer Center Nanoelectronic Technologies (CNT), Dresden, as well as on the PML2 tool at IMS Nanofabrication, Vienna. Two types of e-beam resists were used for the cut exposure. Integration issues as well as overlay requirements and performance improvements necessary for this mix & match approach will be discussed.

  14. Holographic lithography for biomedical applications

    NASA Astrophysics Data System (ADS)

    Stankevicius, E.; Balciunas, E.; Malinauskas, M.; Raciukaitis, G.; Baltriukiene, D.; Bukelskiene, V.

    2012-06-01

    Fabrication of scaffolds for cell growth with appropriate mechanical characteristics is top-most important for successful creation of tissue. Due to ability of fast fabrication of periodic structures with a different period, the holographic lithography technique is a suitable tool for scaffolds fabrication. The scaffolds fabricated by holographic lithography can be used in various biomedical investigations such as the cellular adhesion, proliferation and viability. These investigations allow selection of the suitable material and geometry of scaffolds which can be used in creation of tissue. Scaffolds fabricated from di-acrylated poly(ethylene glycol) (PEG-DA-258) over a large area by holographic lithography technique are presented in this paper. The PEG-DA scaffolds fabricated by holographic lithography showed good cytocompatibility for rabbit myogenic stem cells. It was observed that adult rabbit muscle-derived myogenic stem cells grew onto PEG-DA scaffolds. They were attached to the pillars and formed cell-cell interactions. It demonstrates that the fabricated structures have potential to be an interconnection channel network for cell-to-cell interactions, flow transport of nutrients and metabolic waste as well as vascular capillary ingrowth. These results are encouraging for further development of holographic lithography by improving its efficiency for microstructuring three-dimensional scaffolds out of biodegradable hydrogels

  15. Photoinhibition superresolution lithography

    NASA Astrophysics Data System (ADS)

    Forman, Darren Lawrence

    While the prospect of nanoscale manufacturing has generated tremendous excitement, arbitrary patterning at nanometer length scales cannot be brought about with current photolithography---the technology that for decades has driven electronics miniaturization and enabled mass production of digital logic, memory, MEMS and flat-panel displays. This is due to the relatively long wavelength of light and diffraction, which imposes a physical not technological limit on the resolution of a far-field optical pattern. Photoinhibited superresolution (PInSR) lithography is a new scheme designed to beat the diffraction limit through two-color confinement of photopolymerization and, via efficient single-photon absorption kinetics, also be high-throughput capable. This thesis describes development of an integrated optical and materials system for investigating spatiotemporal dynamics of photoinhibited superresolution lithography, with a demonstrated 3x superresolution beyond the diffraction limit. The two-color response, arising from orthogonal photogeneration of species that participate in competing reactions, is shown to be highly complex. This is both a direct and indirect consequence of mobility. Interesting trade-offs arise: thin-film resins (necessitated by single-photon absorption kinetics) require high viscosity for film stability, but the photoinhibition effect is suppressed in viscous resins. Despite this apparent suppression, which can be overcome with high excitation of the photoinhibition system, the low mobility afforded by viscous materials is beneficial for confinement of active species. Diffusion-induced blurring of patterned photoinhibition is problematic in a resin with viscosity = 1,000 cP, and overcome in a resin with viscosity eta = 500,000 cP. Superresolution of factor 3x beyond the diffraction limit is demonstrated at 0.2 NA, with additional results indicating superresolution ability at 1.2 NA. Investigating the effect of diminished photoinhibition efficacy

  16. French Immersion Weekends.

    ERIC Educational Resources Information Center

    Mydlarski, Donna; Klinck, Pat

    1983-01-01

    Describes immersion weekends sponsored by the University of Calgary. The discussion includes examples from actual weekends to describe the planning and implementation. A qualitative evaluation is also discussed. (Author/AMH)

  17. Short Mitochondrial ARF Triggers Parkin/PINK1-dependent Mitophagy*

    PubMed Central

    Grenier, Karl; Kontogiannea, Maria; Fon, Edward A.

    2014-01-01

    Parkinson disease (PD) is a complex neurodegenerative disease characterized by the loss of dopaminergic neurons in the substantia nigra. Multiple genes have been associated with PD, including Parkin and PINK1. Recent studies have established that the Parkin and PINK1 proteins function in a common mitochondrial quality control pathway, whereby disruption of the mitochondrial membrane potential leads to PINK1 stabilization at the mitochondrial outer surface. PINK1 accumulation leads to Parkin recruitment from the cytosol, which in turn promotes the degradation of the damaged mitochondria by autophagy (mitophagy). Most studies characterizing PINK1/Parkin mitophagy have relied on high concentrations of chemical uncouplers to trigger mitochondrial depolarization, a stimulus that has been difficult to adapt to neuronal systems and one unlikely to faithfully model the mitochondrial damage that occurs in PD. Here, we report that the short mitochondrial isoform of ARF (smARF), previously identified as an alternate translation product of the tumor suppressor p19ARF, depolarizes mitochondria and promotes mitophagy in a Parkin/PINK1-dependent manner, both in cell lines and in neurons. The work positions smARF upstream of PINK1 and Parkin and demonstrates that mitophagy can be triggered by intrinsic signaling cascades. PMID:25217637

  18. Physical Limitations in Lithography for Microelectronics.

    ERIC Educational Resources Information Center

    Flavin, P. G.

    1981-01-01

    Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

  19. Therapeutic Targets in the ARF Tumor Suppressor Pathway

    PubMed Central

    Saporita, Anthony J.; Maggi, Leonard B.; Apicelli, Anthony J.; Weber, Jason D.

    2008-01-01

    One of the outstanding fundamental questions in cancer cell biology concerns how cells coordinate cellular growth (or macromolecular synthesis) with cell cycle progression and mitosis. Intuitively, rapidly dividing cells must have some control over these processes; otherwise cells would continue to shrink in volume with every passing cycle, similar to the cytoreductive divisions seen in the very early stages of embryogenesis. The problem is easily solved in unicellular organisms, such as yeast, as their growth rates are entirely dependent on nutrient availability. Multicellular organisms such as mammals, however, must have acquired additional levels of control, as nutrient availability is seldom an issue and the organism has a prodigious capacity to store necessary metabolites in the form of glycogen, lipids, and protein. Furthermore, the specific needs and specialized architecture of tissues must constrain growth for growth’s sake; if not, the necessary function of the organ could be lost. While certainly a myriad of mechanisms for preventing this exist via initiating cell death (e.g. apoptosis, autophagy, necrosis), these all depend on some external cue, such as death signals, hypoxia, lack of nutrients or survival signals. However there must also be some cell autonomous method for surveying against inappropriate growth signals (such as oncogenic stress) that occur in a stochastic fashion, possibly as a result of random mutations. The ARF tumor suppressor seems to fulfill that role, as its expression is near undetectable in normal tissues, yet is potently induced by oncogenic stress (such as overexpression of oncogenic Ras or myc). As a result of induced expression of ARF, the tumor suppressor protein p53 is stabilized and promotes cell cycle arrest. Mutations or epigenetic alterations of the INK4a/Arf locus are second only to p53 mutations in cancer cells, and in some cancers, alterations in both Arf and p53 observed, suggesting that these two tumor

  20. Demonstration of EDA flow for massively parallel e-beam lithography

    NASA Astrophysics Data System (ADS)

    Brandt, P.; Belledent, J.; Tranquillin, C.; Figueiro, T.; Meunier, S.; Bayle, S.; Fay, A.; Milléquant, M.; Icard, B.; Wieland, M.

    2014-03-01

    Today's soaring complexity in pushing the limits of 193nm immersion lithography drives the development of other technologies. One of these alternatives is mask-less massively parallel electron beam lithography, (MP-EBL), a promising candidate in which future resolution needs can be fulfilled at competitive cost. MAPPER Lithography's MATRIX MP-EBL platform has currently entered an advanced stage of development. The first tool in this platform, the FLX 1200, will operate using more than 1,300 beams, each one writing a stripe 2.2μm wide. 0.2μm overlap from stripe to stripe is allocated for stitching. Each beam is composed of 49 individual sub-beams that can be blanked independently in order to write in a raster scan pixels onto the wafer.

  1. Sub-20nm hybrid lithography using optical, pitch-division, and e-beam

    NASA Astrophysics Data System (ADS)

    Belledent, J.; Smayling, M.; Pradelles, J.; Pimenta-Barros, P.; Barnola, S.; Mage, L.; Icard, B.; Lapeyre, C.; Soulan, S.; Pain, L.

    2012-03-01

    A roadmap extending far beyond the current 22nm CMOS node has been presented several times. [1] This roadmap includes the use of a highly regular layout style which can be decomposed into "lines and cuts."[2] The "lines" can be done with existing optical immersion lithography and pitch division with self-aligned spacers.[3] The "cuts" can be done with either multiple exposures using immersion lithography, or a hybrid solution using either EUV or direct-write ebeam.[ 4] The choice for "cuts" will be driven by the availability of cost-effective, manufacturing-ready equipment and infrastructure. Optical lithography improvements have enabled scaling far beyond what was expected; for example, soft x-rays (aka EUV) were in the semiconductor roadmap as early as 1994 since optical resolution was not expected for sub-100nm features. However, steady improvements and innovations such as Excimer laser sources and immersion photolithography have allowed some manufacturers to build 22nm CMOS SOCs with single-exposure optical lithography. With the transition from random complex 2D shapes to regular 1D-patterns at 28nm, the "lines and cuts" approach can extend CMOS logic to at least the 7nm node. The spacer double patterning for lines and optical cuts patterning is expected to be used down to the 14nm node. In this study, we extend the scaling to 18nm half-pitch which is approximately the 10-11nm node using spacer pitch division and complementary e-beam lithography. For practical reasons, E-Beam lithography is used as well to expose the "mandrel" patterns that support the spacers. However, in a production mode, it might be cost effective to replace this step by a standard 193nm exposure and applying the spacer technique twice to divide the pitch by 3 or 4. The Metal-1 "cut" pattern is designed for a reasonably complex logic function with ~100k gates of combinatorial logic and flip-flops. Since the final conductor is defined by a Damascene process, the "cut" patterns become islands

  2. Arf1-GTP-induced Tubule Formation Suggests a Function of Arf Family Proteins in Curvature Acquisition at Sites of Vesicle Budding*

    PubMed Central

    Krauss, Michael; Jia, Jun-Yong; Roux, Aurélien; Beck, Rainer; Wieland, Felix T.; De Camilli, Pietro; Haucke, Volker

    2008-01-01

    ADP-ribosylation factor (Arf) and related small GTPases play crucial roles in membrane traffic within the exo- and endocytic pathways. Arf proteins in their GTP-bound state are associated with curved membrane buds and tubules, frequently together with effector coat proteins to which they bind. Here we report that Arf1 is found on membrane tubules originating from the Golgi complex where it colocalizes with COPI and GGA1 vesicle coat proteins. Arf1 also induces tubulation of liposomes in vitro. Mutations within the amino-terminal amphipathic helix (NTH) of Arf1 affect the number of Arf1-positive tubules in vivo and its property to tubulate liposomes. Moreover, hydrophilic substitutions within the hydrophobic part of its NTH impair Arf1-catalyzed budding of COPI vesicles in vitro. Our data indicate that GTP-controlled local induction of high curvature membranes is an important property of Arf1 that might be shared by a subgroup of Arf/Arl family GTPases. PMID:18693248

  3. HuR Maintains a Replicative Life Span by Repressing the ARF Tumor Suppressor

    PubMed Central

    Kawagishi, Hiroyuki; Hashimoto, Michihiro; Nakamura, Hideaki; Tsugawa, Takayuki; Watanabe, Atsushi; Kontoyiannis, Dimitris L.

    2013-01-01

    p19ARF plays an essential role in the senescence of mouse cells, and its expression is lost by methylation or deletion of the ARF locus; otherwise, p53 is inactivated to bypass senescence. ARF expression is tightly regulated, but little is known about its posttranscriptional regulation. Here, we show that an RNA-binding protein, HuR (human antigen R), represses ARF mRNA translation, thereby maintaining the replicative life span of mouse embryonic fibroblasts (MEFs). Loss of HuR results in premature senescence, with concomitant increases in p19ARF but not p16Ink4a levels, and this senescence is not observed in ARF-null MEFs that retain an intact Ink4a locus. HuR depletion does not alter ARF transcription or stability but enhances ribosome association with ARF mRNA. Under these conditions, ARF mRNA accumulates in nucleoli, where it associates with nucleolin. Furthermore, adipose-specific deletion of the HuR gene results in increased p19ARF expression in aged animals, which is accompanied by decreased insulin sensitivity. Together, our findings demonstrate that p19ARF is also regulated at the translational level, and this translational regulation restrains the cellular life span and tissue functions in vivo. PMID:23508105

  4. HuR maintains a replicative life span by repressing the ARF tumor suppressor.

    PubMed

    Kawagishi, Hiroyuki; Hashimoto, Michihiro; Nakamura, Hideaki; Tsugawa, Takayuki; Watanabe, Atsushi; Kontoyiannis, Dimitris L; Sugimoto, Masataka

    2013-05-01

    p19(ARF) plays an essential role in the senescence of mouse cells, and its expression is lost by methylation or deletion of the ARF locus; otherwise, p53 is inactivated to bypass senescence. ARF expression is tightly regulated, but little is known about its posttranscriptional regulation. Here, we show that an RNA-binding protein, HuR (human antigen R), represses ARF mRNA translation, thereby maintaining the replicative life span of mouse embryonic fibroblasts (MEFs). Loss of HuR results in premature senescence, with concomitant increases in p19(ARF) but not p16(Ink4a) levels, and this senescence is not observed in ARF-null MEFs that retain an intact Ink4a locus. HuR depletion does not alter ARF transcription or stability but enhances ribosome association with ARF mRNA. Under these conditions, ARF mRNA accumulates in nucleoli, where it associates with nucleolin. Furthermore, adipose-specific deletion of the HuR gene results in increased p19(ARF) expression in aged animals, which is accompanied by decreased insulin sensitivity. Together, our findings demonstrate that p19(ARF) is also regulated at the translational level, and this translational regulation restrains the cellular life span and tissue functions in vivo. PMID:23508105

  5. Hypergrowth mTORC1 Signals Translationally Activate the ARF Tumor Suppressor Checkpoint

    PubMed Central

    Miceli, Alexander P.; Saporita, Anthony J.

    2012-01-01

    The ARF tumor suppressor is a potent sensor of hyperproliferative cues emanating from oncogenic signaling. ARF responds to these cues by eliciting a cell cycle arrest, effectively abating the tumorigenic potential of these stimuli. Prior reports have demonstrated that oncogenic RasV12 signaling induces ARF through a mechanism mediated by the Dmp1 transcription factor. However, we now show that ARF protein is still induced in response to RasV12 in the absence of Dmp1 through the enhanced translation of existing Arf mRNAs. Here, we report that the progrowth Ras/tuberous sclerosis complex (TSC)/mTORC1 signaling pathway regulates ARF protein expression and triggers ARF-mediated tumor suppression through a novel translational mechanism. Hyperactivation of mTORC1 through Tsc1 loss resulted in a significant increase in ARF expression, activation of the p53 pathway, and a dramatic cell cycle arrest, which were completely reversed upon Arf deletion. ARF protein induced from RasV12 in the absence of Dmp1 repressed anchorage-independent colony formation in soft agar and tumor burden in an allograft model. Taken together, our data demonstrate the ability of the ARF tumor suppressor to respond to hypergrowth stimuli to prevent unwarranted tumor formation. PMID:22064482

  6. p53-independent functions of the p19ARF tumor suppressor

    PubMed Central

    Weber, Jason D.; Jeffers, John R.; Rehg, Jerold E.; Randle, David H.; Lozano, Guillermina; Roussel, Martine F.; Sherr, Charles J.; Zambetti, Gerard P.

    2000-01-01

    The p19ARF tumor suppressor antagonizes Mdm2 to induce p53-dependent cell cycle arrest. Individual TKO (triple knock out) mice nullizygous for ARF, p53, and Mdm2 develop multiple tumors at a frequency greater than those observed in animals lacking both p53 and Mdm2 or p53 alone, demonstrating that p19ARF can act independently of the Mdm2-p53 axis in tumor surveillance. Reintroduction of ARF into TKO mouse embryo fibroblasts (MEFs), but not into those lacking both p53 and ARF, arrested the cell division cycle in the G1 phase. Inhibition of the retinoblastoma protein had no effect on the ability of ARF to arrest TKO MEFs. Thus, in the absence of Mdm2, p19ARF interacts with other targets to inhibit cell proliferation. PMID:10995391

  7. Isolation and characterization of mammalian cells expressing the Arf promoter during eye development

    PubMed Central

    Iqbal, Nida S.; Xu, Lin; Devitt, Caitlin C.; Skapek, Stephen X.

    2015-01-01

    Although many researchers have successfully uncovered novel functions of the tumor suppressor p19Arf utilizing various types of cultured cancer cells and immortalized fibroblasts, these systems do not accurately reflect the endogenous environment in which Arf is developmentally expressed. We addressed this by isolating perivascular cells from the primary vitreous of the mouse eye. These cells represent a rare cell type that normally expresses the p19Arf tumor suppressor in a non-pathological, developmental context. We utilized fluorescence activated cell sorting to purify the cells by virtue of a GFP reporter driven by the native Arf promoter, and characterized their morphology and gene expression pattern. We further examined the effects of reintroduction of Arf in the PVCs to verify expected downstream effectors of p19Arf as well as uncover novel functions as a regulator of vasculogenesis. This methodology and cell culture model should serve as a useful tool to examine p19Arf biology. PMID:24806224

  8. Porphyrin-Based Photocatalytic Lithography

    SciTech Connect

    Bearinger, J; Stone, G; Christian, A; Dugan, L; Hiddessen, A; Wu, K J; Wu, L; Hamilton, J; Stockton, C; Hubbell, J

    2007-10-15

    Photocatalytic lithography is an emerging technique that couples light with coated mask materials in order to pattern surface chemistry. We excite porphyrins to create radical species that photocatalytically oxidize, and thereby pattern, chemistries in the local vicinity. The technique advantageously does not necessitate mass transport or specified substrates, it is fast and robust and the wavelength of light does not limit the resolution of patterned features. We have patterned proteins and cells in order to demonstrate the utility of photocatalytic lithography in life science applications.

  9. Polymer nanofibers by soft lithography

    NASA Astrophysics Data System (ADS)

    Pisignano, Dario; Maruccio, Giuseppe; Mele, Elisa; Persano, Luana; Di Benedetto, Francesca; Cingolani, Roberto

    2005-09-01

    The fabrication of polymeric fibers by soft lithography is demonstrated. Polyurethane, patterned by capillarity-induced molding with high-resolution elastomeric templates, forms mm-long fibers with a diameter below 0.3μm. The Young's modulus of the fabricated structures, evaluated by force-distance scanning probe spectroscopy, has a value of 0.8MPa. This is an excellent example of nanostructures feasible by the combination of soft nanopatterning and high-resolution fabrication approaches for master templates, and particularly electron-beam lithography.

  10. CD and defect improvement challenges for immersion processes

    NASA Astrophysics Data System (ADS)

    Ehara, Keisuke; Ema, Tatsuhiko; Yamasaki, Toshinari; Nakagawa, Seiji; Ishitani, Seiji; Morita, Akihiko; Kim, Jeonghun; Kanaoka, Masashi; Yasuda, Shuichi; Asai, Masaya

    2009-03-01

    The intention of this study is to develop an immersion lithography process using advanced track solutions to achieve world class critical dimension (CD) and defectivity performance in a state of the art manufacturing facility. This study looks at three important topics for immersion lithography: defectivity, CD control, and wafer backside contamination. The topic of defectivity is addressed through optimization of coat, develop, and rinse processes as well as implementation of soak steps and bevel cleaning as part of a comprehensive defect solution. Develop and rinse processing techniques are especially important in the effort to achieve a zero defect solution. Improved CD control is achieved using a biased hot plate (BHP) equipped with an electrostatic chuck. This electrostatic chuck BHP (eBHP) is not only able to operate at a very uniform temperature, but it also allows the user to bias the post exposure bake (PEB) temperature profile to compensate for systematic within-wafer (WiW) CD non-uniformities. Optimized CD results, pre and post etch, are presented for production wafers. Wafer backside particles can cause focus spots on an individual wafer or migrate to the exposure tool's wafer stage and cause problems for a multitude of wafers. A basic evaluation of the cleaning efficiency of a backside scrubber unit located on the track was performed as a precursor to a future study examining the impact of wafer backside condition on scanner focus errors as well as defectivity in an immersion scanner.

  11. Optical characterization of subwavelength-scale solid immersion lenses

    NASA Astrophysics Data System (ADS)

    Kim, Myun-Sik; Scharf, Toralf; Haq, Mohammad Tahdiul; Nakagawa, Wataru; Herzig, Hans Peter

    2012-03-01

    We present the fabrication and optical characterization of nano-scale solid immersion lenses (nano-SILs) with sizes down to a subwavelength range. Submicron-scale cylinders fabricated by electron-beam lithography (EBL) are thermally reflowed to form a spherical shape. Subsequent soft lithography leads to nano-SILs on transparent substrates, i.e. glass, for optical characterization with visible light. The optical characterization is performed using a high-resolution interference microscope (HRIM) with illumination at 642 nm wavelength. The measurements of the 3D amplitude and phase fields provide information on the spot size and the peak intensity. In particular, the phase measurement is a more convincing proof of the Airy disc size reduction rather than the full-width at half maximum (FWHM) spot size. The focal spots produced by the nano-SILs show both spot-size reduction and enhanced optical intensity, which are consistent with the immersion effect. In this way, we experimentally confirm the immersion effect of a subwavelength-size SIL (d = 530 nm and h = 45 nm) with a spot reduction ratio of 1.35, which is less than the expected value of 1.5, most likely due to the slightly non-ideal shape of the nano-SIL.

  12. Microfabrication using soft lithography

    NASA Astrophysics Data System (ADS)

    Zhao, Xiao-Mei

    Soft Lithography is a group of non-photolithographic techniques currently being explored in our group. Four such techniques-microcontact printing (μCP), replica molding (REM), micromolding in capillaries (MIMIC), and microtransfer molding (μTM)-have been demonstrated for fabricating micro- and nanostructures of a variety of materials with dimension >=30 nm. Part I (Chapters 1-5) reviews several aspects of the three molding techniques REM, MIMIC, and μTM. Chapters 1-3 describe μTM and MIMIC, and the use of these techniques in the fabrication of functional devices. μTM is capable of generating μm-scale structures over large areas, on both planar and contoured surfaces, and is able to make 3-dimensional structures layer by layer. The capability of μTM and MIMIC has been demonstrated in the fabrication of single-mode waveguides, waveguide couplers and interferometers. The coupling between waveguides can be tailored by waveguide spacing or the differential in curing time between the waveguides and the cladding. Chapters 4-5 demonstrate the combination of REM and shrinkable polystyrene (PS) films to reduce the feature size of microstructures and to generate microstructures with high aspect ratios on both planar and curved surfaces. A shrinkable PS film is patterned with relief structures, and then heated and shrinks. Thermal shrinkage results in a 100-fold increase in the aspect ratio of the patterned microstructures in the PS film. The microstructures in the shrunken PS films can be transferred to many other materials by REM. Part II (Chapters 6-7) focuses on two issues in the microfabrication using self-assembled monolayers (SAMs) as ultrathin resists. Chapter 6 describes a selective etching solution for transferring patterns of SAMs of alkanethiolates into the underlying layers (e.g., gold, silver, and copper). This etching solution uses thiosulfate as the ligand that coordinates to the metal ions, and ferricyanide as the oxidant. It has been demonstrated to be

  13. Fundamental study of droplet spray characteristics in photomask cleaning for advanced lithography

    NASA Astrophysics Data System (ADS)

    Lu, C. L.; Yu, C. H.; Liu, W. H.; Hsu, Luke; Chin, Angus; Lee, S. C.; Yen, Anthony; Lee, Gaston; Dress, Peter; Singh, Sherjang; Dietze, Uwe

    2010-09-01

    The fundamentals of droplet-based cleaning of photomasks are investigated and performance regimes that enable the use of binary spray technologies in advanced mask cleaning are identified. Using phase Doppler anemometry techniques, the effect of key performance parameters such as liquid and gas flow rates and temperature, nozzle design, and surface distance on droplet size, velocity, and distributions were studied. The data are correlated to particle removal efficiency (PRE) and feature damage results obtained on advanced photomasks for 193-nm immersion lithography.

  14. Immersive cyberspace system

    NASA Technical Reports Server (NTRS)

    Park, Brian V. (Inventor)

    1997-01-01

    An immersive cyberspace system is presented which provides visual, audible, and vibrational inputs to a subject remaining in neutral immersion, and also provides for subject control input. The immersive cyberspace system includes a relaxation chair and a neutral immersion display hood. The relaxation chair supports a subject positioned thereupon, and places the subject in position which merges a neutral body position, the position a body naturally assumes in zero gravity, with a savasana yoga position. The display hood, which covers the subject's head, is configured to produce light images and sounds. An image projection subsystem provides either external or internal image projection. The display hood includes a projection screen moveably attached to an opaque shroud. A motion base supports the relaxation chair and produces vibrational inputs over a range of about 0-30 Hz. The motion base also produces limited translation and rotational movements of the relaxation chair. These limited translational and rotational movements, when properly coordinated with visual stimuli, constitute motion cues which create sensations of pitch, yaw, and roll movements. Vibration transducers produce vibrational inputs from about 20 Hz to about 150 Hz. An external computer, coupled to various components of the immersive cyberspace system, executes a software program and creates the cyberspace environment. One or more neutral hand posture controllers may be coupled to the external computer system and used to control various aspects of the cyberspace environment, or to enter data during the cyberspace experience.

  15. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, Natale M.; Markle, David A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

  16. ITRS lithography roadmap: 2015 challenges

    NASA Astrophysics Data System (ADS)

    Neisser, Mark; Wurm, Stefan

    2015-08-01

    In the past few years, novel methods of patterning have made considerable progress. In 2011, extreme ultraviolet (EUV) lithography was the front runner to succeed optical lithography. However, although EUV tools for pilot production capability have been installed, its high volume manufacturing (HVM) readiness continues to be gated by productivity and availability improvements taking longer than expected. In the same time frame, alternative and/or complementary technologies to EUV have made progress. Directed self-assembly (DSA) has demonstrated improved defectivity and progress in integration with design and pattern process flows. Nanoimprint improved performance considerably and is pilot production capable for memory products. Maskless lithography has made progress in tool development and could have an α tool ready in the late 2015 or early 2016. But they all have to compete with multiple patterning. Quadruple patterning is already demonstrated and can pattern lines and spaces down to close to 10-nm half pitch. The other techniques have to do something better than quadruple patterning does to be chosen for implementation. DSA and NIL promise a lower cost. EUV promises a simpler and shorter process and the creation of 2-D patterns more easily with much reduced complexity compared to multiple patterning. Maskless lithography promises to make chip personalization easy and to be particularly cost effective for low-volume chip designs. Decision dates for all of the technologies are this year or next year.

  17. Biomolecular Patterning via Photocatalytic Lithography

    SciTech Connect

    Bearinger, J P; Hiddessen, A L; Wu, K J; Christian, A T; Dugan, L C; Stone, G; Camarero, J; Hinz, A K; Hubbell, J A

    2005-02-18

    We have developed a novel method for patterning surface chemistry: Photocatalytic Lithography. This technique relies on inexpensive stamp materials and light; it does not necessitate mass transport or specified substrates, and the wavelength of light should not limit feature resolution. We have demonstrated the utility of this technique through the patterning of proteins, single cells and bacteria.

  18. Graphic Arts/Offset Lithography.

    ERIC Educational Resources Information Center

    Hoisington, James; Metcalf, Joseph

    This revised curriculum for graphic arts is designed to provide secondary and postsecondary students with entry-level skills and an understanding of current printing technology. It contains lesson plans based on entry-level competencies for offset lithography as identified by educators and industry representatives. The guide is divided into 15…

  19. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, N.M.; Markle, D.A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

  20. E-beam to complement optical lithography for 1D layouts

    NASA Astrophysics Data System (ADS)

    Lam, David K.; Liu, Enden D.; Smayling, Michael C.; Prescop, Ted

    2011-04-01

    The semiconductor industry is moving to highly regular designs, or 1D gridded layouts, to enable scaling to advanced nodes, as well as improve process latitude, chip size and chip energy consumption. The fabrication of highly regular ICs is straightforward. Poly and metal layers are arranged into 1D layouts. These 1D layouts facilitate a two-step patterning approach: a line-creation step, followed by a line-cutting step, to form the desired IC pattern (See Figure 1). The first step, line creation, can be accomplished with a variety of lithography techniques including 193nm immersion (193i) and Self-Aligned Double Patterning (SADP). It appears feasible to create unidirectional parallel lines to at least 11 nm half-pitch, with two applications of SADP for pitch division by four. Potentially, this step can also be accomplished with interference lithography or directed self assembly in the future. The second step, line cutting, requires an extremely high-resolution lithography technique. At advanced nodes, the only options appear to be the costly quadruple patterning with 193i, or EUV or E-Beam Lithography (EBL). This paper focuses on the requirements for a lithography system for "line cutting", using EBL to complement Optical. EBL is the most cost-effective option for line cutting at advanced nodes for HVM.

  1. Differential effects on ARF stability by normal vs. oncogenic levels of c-Myc expression

    PubMed Central

    Chen, Delin; Kon, Ning; Zhong, Jiayun; Zhang, Pingzhao; Yu, Long; Gu, Wei

    2013-01-01

    SUMMARY ARF suppresses aberrant cell growth upon c-Myc overexpression through activating p53 responses. Nevertheless, the precise mechanism by which ARF specifically, restrains the oncogenic potential of c-Myc without affecting its normal physiological function is not well understood. Here, we show that low levels of c-Myc expression stimulate cell proliferation whereas high levels inhibit through activating the ARF-p53 response. Although the mRNA levels of ARF are induced under both scenarios, the accumulation of ARF protein occurs only when ULF-mediated degradation of ARF is inhibited by c-Myc overexpression. Moreover, the levels of ARF are reduced through ULF-mediated ubiquitination upon DNA damage. Blocking ARF degradation by c-Myc overexpression dramatically stimulates the apoptotic responses. Our study reveals that ARF stability control is crucial for differentiating normal (low) vs. oncogenic (high) levels of c-Myc expression and suggests that differential effects on ULF- mediated ARF ubiquitination by c-Myc levels act as a barrier in oncogene-induced stress responses. PMID:23747016

  2. An Effector Domain Mutant of Arf6 Implicates Phospholipase D in Endosomal Membrane RecyclingD⃞

    PubMed Central

    Jovanovic, Olivera A.; Brown, Fraser D.; Donaldson, Julie G.

    2006-01-01

    In this study, we investigated the role of phospholipase D (PLD) in mediating Arf6 function in cells. Expression of Arf6 mutants that are defective in activating PLD, Arf6N48R and Arf6N48I, inhibited membrane recycling to the plasma membrane (PM), resulting in an accumulation of tubular endosomal membranes. Additionally, unlike wild-type Arf6, neither Arf6 mutant could generate protrusions or recruit the Arf6 GTPase activating protein (GAP) ACAP1 onto the endosome in the presence of aluminum fluoride. Remarkably, all of these phenotypes, including accumulated tubular endosomes, blocked recycling, and failure to make protrusions and recruit ACAP effectively, could be recreated in either untransfected cells or cells expressing wild-type Arf6 by treatment with 1-butanol to inhibit the formation of phosphatidic acid (PA), the product of PLD. Moreover, most of the defects present in cells expressing Arf6N48R or N48I could be reversed by treatment with agents expected to elevate PA levels in cells. Together, these observations provide compelling evidence that Arf6 stimulation of PLD is required for endosomal membrane recycling and GAP recruitment. PMID:16280360

  3. IGF-1 drives chromogranin A secretion via activation of Arf1 in human neuroendocrine tumour cells

    PubMed Central

    Münzberg, Christin; Höhn, Katharina; Krndija, Denis; Maaß, Ulrike; Bartsch, Detlef K; Slater, Emily P; Oswald, Franz; Walther, Paul; Seufferlein, Thomas; von Wichert, Götz

    2015-01-01

    Hypersecretion is the major symptom of functional neuroendocrine tumours. The mechanisms that contribute to this excessive secretion of hormones are still elusive. A key event in secretion is the exit of secretory products from the Golgi apparatus. ADP-ribosylation factor (Arf) GTPases are known to control vesicle budding and trafficking, and have a leading function in the regulation of formation of secretory granula at the Golgi. Here, we show that Arf1 is the predominant Arf protein family member expressed in the neuroendocrine pancreatic tumour cell lines BON and QGP-1. In BON cells Arf1 colocalizes with Golgi markers as well as chromogranin A, and shows significant basal activity. The inhibition of Arf1 activity or expression significantly impaired secretion of chromogranin A. Furthermore, we show that the insulin-like growth factor 1 (IGF-1), a major regulator of growth and secretion in BON cells, induces Arf1 activity. We found that activation of Arf1 upon IGF-1 receptor stimulation is mediated by MEK/ERK signalling pathway in BON and QGP-1 cells. Moreover, the activity of Arf1 in BON cells is mediated by autocrinely secreted IGF-1, and concomitantly, autocrine IGF1 secretion is maintained by Arf1 activity. In summary, our data indicate an important regulatory role for Arf1 at the Golgi in hypersecretion in neuroendocrine cancer cells. PMID:25754106

  4. Evolution of the ARF gene family in land plants: old domains, new tricks.

    PubMed

    Finet, Cédric; Berne-Dedieu, Annick; Scutt, Charles P; Marlétaz, Ferdinand

    2013-01-01

    Auxin response factors (ARF) are key players in plant development. They mediate the cellular response to the plant hormone auxin by activating or repressing the expression of downstream developmental genes. The pivotal activation function of ARF proteins is enabled by their four-domain architecture, which includes both DNA-binding and protein dimerization motifs. To determine the evolutionary origin of this characteristic architecture, we built a comprehensive data set of 224 ARF-related protein sequences that represents all major living divisions of land plants, except hornworts. We found that ARFs are split into three subfamilies that could be traced back to the origin of the land plants. We also show that repeated events of extensive gene duplication contributed to the expansion of those three original subfamilies. Further examination of our data set uncovered a broad diversity in the structure of ARF transcripts and allowed us to identify an additional conserved motif in ARF proteins. We found that additional structural diversity in ARF proteins is mainly generated by two mechanisms: genomic truncation and alternative splicing. We propose that the loss of domains from the canonical, four-domain ARF structure has promoted functional shifts within the ARF family by disrupting either dimerization or DNA-binding capabilities. For instance, the loss of dimerization domains in some ARFs from moss and spikemoss genomes leads to proteins that are reminiscent of Aux/IAA proteins, possibly providing a clue on the evolution of these modulators of ARF function. We also assessed the functional impact of alternative splicing in the case of ARF4, for which we have identified a novel isoform in Arabidopsis thaliana. Genetic analysis showed that these two transcripts exhibit markedly different developmental roles in A. thaliana. Gene duplications, domain rearrangement, and post-transcriptional regulation have thus enabled a subtle control of auxin signaling through ARF proteins

  5. Gasoline immersion injury

    SciTech Connect

    Simpson, L.A.; Cruse, C.W.

    1981-01-01

    Chemical burns and pulmonary complications are the most common problems encountered in the patient immersed in gasoline. Our patient demonstrated a 46-percent total-body-surface area, partial-thickness chemical burn. Although he did not develop bronchitis or pneumonitis, he did display persistent atelectasis, laryngeal edema, and subsequent upper airway obstruction. This had not previously been reported in gasoline inhalation injuries. Hydrocarbon hepatitis secondary to the vascular endothelial damage is apparently a reversible lesion with no reported long-term sequelae. Gasoline immersion injuries may be a series multisystem injury and require the burn surgeon to take a multisystem approach to its diagnosis and treatment.

  6. Lithography of choice for the 45-nm node: new medium, new wavelength, or new beam?

    NASA Astrophysics Data System (ADS)

    Uesawa, Fumikatsu; Katsumata, Mikio; Ogawa, Kazuhisa; Takeuchi, Koichi; Omori, Shinji; Yoshizawa, Masaki; Kawahira, Hiroichi

    2004-05-01

    In order to clarify the direction of the lithography for the 45 nm node, the feasibilities of various lithographic techniques for gate, metal, and contact layers are studied by using experimental data and aerial image simulations. The focus and exposure budget have been determined from the actual data and the realistic estimation such as the focus distributions across a wafer measured by the phase shift focus monitor (PSFM), the focus and exposure reproducibility of the latest exposure tools, and the anticipated 45 nm device topography, etc. 193 nm lithography with a numerical aperture (NA) of 0.93 achieves the half pitch of 70 nm (hp70) by using an attenuated phase shift mask (att-PSM) and annular illumination. 193 nm immersion lithography has the possibility to achieve the hp60 without an alternative PSM (alt-PSM). For a gate layer, 50-nm/130-nm line-and-space (L/S) patterns as well as 50 nm isolated lines can be fabricated by an alt-PSM. Although specific aberrations degrade the critical dimension (CD) variation of an alt-PSM, +/-2.6 nm CD uniformity (CDU) is demonstrated by choosing the well-controlled projection lens and using a high flatness wafer. For a contact layers, printing 90 nm contacts is very critical by optical lithography even if the aggressive resolution enhancement technique (RET) is used. Especially for dense contact, the mask error factor (MEF) increases to around 10 and practical process margin is not available at all. On the other hand, low-energy electron-beam proximity-projection lithography (LEEPL) can fabricate 80 nm contact with large process margin. As a lithography tool for the contact layers of the 45 nm node devices, LEEPL is expected to replace 193 nm lithography.

  7. Novel strategy for the design of highly transparent ArF resists with excellent dry etch resistance

    NASA Astrophysics Data System (ADS)

    Zhao, Wenwei; Ohfuji, Takeshi; Sasago, Masaru; Tagawa, Seiichi

    1998-06-01

    To circumvent the difficulty in seeking a balance between dry etch resistance and the transparency at 193 nm in the design of a single-layer-resist for ArF lithography, a new strategy based on the de-coupling of these two criteria from each other is presented. The possibility of the de-coupling has been demonstrated by imparting dry etch resistance to resist matrix after the exposure step. Imparting of dry etch resistance can be achieved with the utilization of thermal- activated reactions during post exposure bake or plasma- activated reactions during etching. Specifically, copolymers containing acrylonitrile were synthesized and evaluated as a demonstration. Chemical reactions, especially cyclization reaction, in the copolymers upon heating were investigated. Intramolecular cyclization of the nitrile groups, which is electrophilic reagent catalyzed, starts at about 130 degree(s)C in a copolymer of acrylonitrile containing 50 mol% methacrylic acid. The reaction results in rigid ring structures with satisfying dry etch resistance. Dry etch resistance of the copolymer after thermal treatment was measured to be up to the same level of a poly(hydroxystyrene)-based commercial resist. Partially protection of the acid component by introducing tertiary- butyl ester groups provides new chemically amplified resist candidates. The materials based on terpolymers of acrylonitrile, tertiary-butyl methacrylate and methacrylic acid well satisfy the basic requirements for ArF resists with high transparency at 193 nm and excellent dry etch resistance after prolonged post exposure bake. Lithographic performance of the newly designed materials are currently under further assessments..

  8. STAT3 regulated ARF expression suppresses prostate cancer metastasis

    PubMed Central

    Pencik, Jan; Schlederer, Michaela; Gruber, Wolfgang; Unger, Christine; Walker, Steven M.; Chalaris, Athena; Marié, Isabelle J.; Hassler, Melanie R.; Javaheri, Tahereh; Aksoy, Osman; Blayney, Jaine K.; Prutsch, Nicole; Skucha, Anna; Herac, Merima; Krämer, Oliver H.; Mazal, Peter; Grebien, Florian; Egger, Gerda; Poli, Valeria; Mikulits, Wolfgang; Eferl, Robert; Esterbauer, Harald; Kennedy, Richard; Fend, Falko; Scharpf, Marcus; Braun, Martin; Perner, Sven; Levy, David E.; Malcolm, Tim; Turner, Suzanne D.; Haitel, Andrea; Susani, Martin; Moazzami, Ali; Rose-John, Stefan; Aberger, Fritz; Merkel, Olaf; Moriggl, Richard; Culig, Zoran; Dolznig, Helmut; Kenner, Lukas

    2015-01-01

    Prostate cancer (PCa) is the most prevalent cancer in men. Hyperactive STAT3 is thought to be oncogenic in PCa. However, targeting of the IL-6/STAT3 axis in PCa patients has failed to provide therapeutic benefit. Here we show that genetic inactivation of Stat3 or IL-6 signalling in a Pten-deficient PCa mouse model accelerates cancer progression leading to metastasis. Mechanistically, we identify p19ARF as a direct Stat3 target. Loss of Stat3 signalling disrupts the ARF–Mdm2–p53 tumour suppressor axis bypassing senescence. Strikingly, we also identify STAT3 and CDKN2A mutations in primary human PCa. STAT3 and CDKN2A deletions co-occurred with high frequency in PCa metastases. In accordance, loss of STAT3 and p14ARF expression in patient tumours correlates with increased risk of disease recurrence and metastatic PCa. Thus, STAT3 and ARF may be prognostic markers to stratify high from low risk PCa patients. Our findings challenge the current discussion on therapeutic benefit or risk of IL-6/STAT3 inhibition. PMID:26198641

  9. ArF pellicle degradation mechanism for resolving CD variation

    NASA Astrophysics Data System (ADS)

    Choi, Hyungseok; Ahn, Yohan; Ryu, Jua; Lee, Yangkoo; An, Bumhyun; Lee, Seokryeol

    2007-03-01

    With the introduction of ArF laser, a binary mask is preferred because a PSM mask is still weak to the crystal defect called as photomask haze although extensive studies trying to resolve the haze impact to a photomask have been performed by various researchers in company and school. However, a new problem was happened after a binary mask introduction that CD variation in an exposure shot is appeared and is gradually increased. And finally, CD variation considerably causes defects in wafer level. It was proven that CD variation is closely related to the change of the reticle transmittance by a lot of researches. In this study, the mechanism of ArF pellicle degradation is focused on because the pellicle degradation affects a reticle transmittance in direct. The components outgassed from a pellicle by the high photon energy of ArF laser, for example carbon or fluorine, are absorbed on the surface of the reticle, so that the transmittance of the reticle is decreased. The phenomena of the pellicle degradation have been studied by the various viewpoints, theoretical background, experiment and results tested in mass production line in this study. Therefore, this study has the important meaning by providing the substantial clues to resolve CD variation problem in a near future.

  10. p19(Arf) is required for the cellular response to chronic DNA damage.

    PubMed

    Bieging-Rolett, K T; Johnson, T M; Brady, C A; Beaudry, V G; Pathak, N; Han, S; Attardi, L D

    2016-08-18

    The p53 tumor suppressor is a stress sensor, driving cell cycle arrest or apoptosis in response to DNA damage or oncogenic signals. p53 activation by oncogenic signals relies on the p19(Arf) tumor suppressor, while p53 activation downstream of acute DNA damage is reported to be p19(Arf)-independent. Accordingly, p19(Arf)-deficient mouse embryo fibroblasts (MEFs) arrest in response to acute DNA damage. However, p19(Arf) is required for replicative senescence, a condition associated with an activated DNA damage response, as p19(Arf)-/- MEFs do not senesce after serial passage. A possible explanation for these seemingly disparate roles for p19(Arf) is that acute and chronic DNA damage responses are mechanistically distinct. Replicative senescence may result from chronic, low-dose DNA damage responses in which p19(Arf) has a specific role. We therefore examined the role of p19(Arf) in cellular responses to chronic, low-dose DNA-damaging agent treatment by maintaining MEFs in low oxygen and administering 0.5 G y γ-irradiation daily or 150 μM hydroxyurea, a replication stress inducer. In contrast to their response to acute DNA damage, p19(Arf)-/- MEFs exposed to chronic DNA damage do not senesce, revealing a selective role for p19(Arf) in senescence upon low-level, chronic DNA damage. We show further that p53 pathway activation in p19(Arf)-/- MEFs exposed to chronic DNA damage is attenuated relative to wild-type MEFs, suggesting a role for p19(Arf) in fine-tuning p53 activity. However, combined Nutlin3a and chronic DNA-damaging agent treatment is insufficient to promote senescence in p19(Arf)-/- MEFs, suggesting that the role of p19(Arf) in the chronic DNA damage response may be partially p53-independent. These data suggest the importance of p19(Arf) for the cellular response to the low-level DNA damage incurred in culture or upon oncogene expression, providing new insight into how p19(Arf) serves as a tumor suppressor. Moreover, our study helps reconcile reports

  11. Total Technology Immersion

    ERIC Educational Resources Information Center

    Vaughn, Sandy

    2010-01-01

    Total technology immersion doesn't happen overnight, but with vision and determination, transformation can take hold and start to grow. Floydada Independent School District (FISD), winner of the 2010 Sylvia Charp Award for District Innovation in Technology, is a great example of what a district can achieve when starting with a modest tech…

  12. Microfabricated rubber microscope using soft solid immersion lenses

    NASA Astrophysics Data System (ADS)

    Gambin, Yann; Legrand, Olivier; Quake, Stephen R.

    2006-04-01

    We show here a technique of soft lithography to microfabricate efficient solid immersion lenses (SIL) out of rubber elastomers. The light collection efficiency of a lens system is described by its numerical aperture (NA), and is critical for applications as epifluorescence microscopy [B. Herman, Fluorescence Microscopy (BIOS Scientific, Oxford/Springer, United Kingdom, 1998). While most simple lens systems have numerical apertures less than 1, the lenses described here have NA =1.25. Better performance can be engineered though the use of compound designs; we used this principle to make compound solid immersion lenses (NA=1.32). An important application of these lenses will be as integrated optics for microfluidic devices. We incorporated them into a handheld rubber microscope for microfluidic flow cytometry and imaged single E. Coli cells by fluorescence.

  13. ArF scanner performance improvement by using track integrated CD optimization

    NASA Astrophysics Data System (ADS)

    Huang, Jacky; Yu, Shinn-Sheng; Ke, Chih-Ming; Wu, Timothy; Wang, Yu-Hsi; Gau, Tsai-Sheng; Wang, Dennis; Li, Allen; Yang, Wenge; Kaoru, Araki

    2006-03-01

    In advanced semiconductor processing, shrinking CD is one of the main objectives when moving to the next generation technology. Improving CD uniformity (CDU) with shrinking CD is one of the biggest challenges. From ArF lithography CD error budget analysis, PEB (post exposure bake) contributes more than 40% CD variations. It turns out that hot plate performance such as CD matching and within-plate temperature control play key roles in litho cell wafer per hour (WPH). Traditionally wired or wireless thermal sensor wafers were used to match and optimize hot plates. However, sensor-to-sensor matching and sensor data quality vs. sensor lifetime or sensor thermal history are still unknown. These concerns make sensor wafers more suitable for coarse mean-temperature adjustment. For precise temperature adjustment, especially within-hot-plate temperature uniformity, using CD instead of sensor wafer temperature is a better and more straightforward metrology to calibrate hot plates. In this study, we evaluated TEL clean track integrated optical CD metrology (IM) combined with TEL CD Optimizer (CDO) software to improve 193-nm resist within-wafer and wafer-to-wafer CD uniformity. Within-wafer CD uniformity is mainly affected by the temperature non-uniformity on the PEB hot plate. Based on CD and PEB sensitivity of photo resists, a physical model has been established to control the CD uniformity through fine-tuning PEB temperature settings. CD data collected by track integrated CD metrology was fed into this model, and the adjustment of PEB setting was calculated and executed through track internal APC system. This auto measurement, auto feed forward, auto calibration and auto adjustment system can reduce the engineer key-in error and improve the hot plate calibration cycle time. And this PEB auto calibration system can easily bring hot-plate-to-hot-plate CD matching to within 0.5nm and within-wafer CDU (3σ) to less than 1.5nm.

  14. Membrane curvature induced by Arf1-GTP is essential for vesicle formation

    PubMed Central

    Beck, Rainer; Sun, Zhe; Adolf, Frank; Rutz, Chistoph; Bassler, Jochen; Wild, Klemens; Sinning, Irmgard; Hurt, Ed; Brügger, Britta; Béthune, Julien; Wieland, Felix

    2008-01-01

    The GTPase Arf1 is considered as a molecular switch that regulates binding and release of coat proteins that polymerize on membranes to form transport vesicles. Here, we show that Arf1-GTP induces positive membrane curvature and find that the small GTPase can dimerize dependent on GTP. Investigating a possible link between Arf dimerization and curvature formation, we isolated an Arf1 mutant that cannot dimerize. Although it was capable of exerting the classical role of Arf1 as a coat receptor, it could not mediate the formation of COPI vesicles from Golgi-membranes and was lethal when expressed in yeast. Strikingly, this mutant was not able to deform membranes, suggesting that GTP-induced dimerization of Arf1 is a critical step inducing membrane curvature during the formation of coated vesicles. PMID:18689681

  15. [Basic principles for setting acute reference dose, ARfD in Japan].

    PubMed

    Yoshida, Midori; Suzuki, Daisetsu; Matsumoto, Kiyoshi; Shirota, Mariko; Inoue, Kaoru; Takahashi, Miwa; Morita, Takeshi; Ono, Atsushi

    2013-01-01

    Basic principles for simulation of acute reference dose (ARfD) setting were defined based on the work of Solecki et al. (2005). The principles are: (1) Appearance of acute toxicity within 24 h after oral administration. (2) Rationale for setting toxicity that appears or could appear after single oral administration. (3) ARfD setting is assumed to be necessary for all pesticides. (4) ARfD setting is not necessary when the value is at or above the cutoff level. (5) The setting basically applies to the general population. (6) ARfD is set based on the lowest NOAEL among all the available study data concerning endpoints for acute effects. (7) Effects of exposure during critical periods should be considered as endpoints for ARfD setting. (8) The approach for the safety coefficient is the same as that for acceptable daily intake. (9) If available, human data are acceptable as an endpoint for ARfD setting. PMID:24025213

  16. Direct write electron beam lithography: a historical overview

    NASA Astrophysics Data System (ADS)

    Pfeiffer, Hans C.

    2010-09-01

    of opportunity for EPL had closed with the quick implementation of immersion lithography and the interest of the industry has since shifted back to maskless lithography (ML2). This historical overview of EBDW will highlight opportunities and limitation of the technology with particular focus on technical challenges facing the current ML2 development efforts in Europe and the US. A brief status report and risk assessment of the ML2 approaches will be provided.

  17. X-ray lithography source

    DOEpatents

    Piestrup, Melvin A.; Boyers, David G.; Pincus, Cary

    1991-01-01

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  18. X-ray lithography source

    DOEpatents

    Piestrup, M.A.; Boyers, D.G.; Pincus, C.

    1991-12-31

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

  19. Mask technology for EUV lithography

    NASA Astrophysics Data System (ADS)

    Bujak, M.; Burkhart, Scott C.; Cerjan, Charles J.; Kearney, Patrick A.; Moore, Craig E.; Prisbrey, Shon T.; Sweeney, Donald W.; Tong, William M.; Vernon, Stephen P.; Walton, Christopher C.; Warrick, Abbie L.; Weber, Frank J.; Wedowski, Marco; Wilhelmsen, Karl C.; Bokor, Jeffrey; Jeong, Sungho; Cardinale, Gregory F.; Ray-Chaudhuri, Avijit K.; Stivers, Alan R.; Tejnil, Edita; Yan, Pei-yang; Hector, Scott D.; Nguyen, Khanh B.

    1999-04-01

    Extreme UV Lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. EUVL uses 10-14 nm light as envisioned by the EUV Limited Liability Company, a consortium formed by Intel and supported by Motorola and AMD to perform R and D work at three national laboratories. Much work has already taken place, with the first prototypical cameras operational at 13.4 nm using low energy laser plasma EUV light sources to investigate issues including the source, camera, electro- mechanical and system issues, photoresists, and of course the masks. EUV lithograph masks are fundamentally different than conventional photolithographic masks as they are reflective instead of transmissive. EUV light at 13.4 nm is rapidly absorbed by most materials, thus all light transmission within the EUVL system from source to silicon wafer, including EUV reflected from the mask, is performed by multilayer mirrors in vacuum.

  20. Nanoimprint lithography for microfluidics manufacturing

    NASA Astrophysics Data System (ADS)

    Kreindl, Gerald; Matthias, Thorsten

    2013-12-01

    The history of imprint technology as lithography method for pattern replication can be traced back to 1970's but the most significant progress has been made by the research group of S. Chou in the 1990's. Since then, it has become a popular technique with a rapidly growing interest from both research and industrial sides and a variety of new approaches have been proposed along the mainstream scientific advances. Nanoimprint lithography (NIL) is a novel method for the fabrication of micro/nanometer scale patterns with low cost, high throughput and high resolution. Unlike traditional optical lithographic approaches, which create pattern through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional lithographic techniques. The ability to fabricate structures from the micro- to the nanoscale with high precision in a wide variety of materials is of crucial importance to the advancement of micro- and nanotechnology and the biotech- sciences as a whole and will be discussed in this paper. Nanoimprinting can not only create resist patterns, as in lithography, but can also imprint functional device structures in various polymers, which can lead to a wide range of applications in electronics, photonics, data storage, and biotechnology.

  1. Ral-Arf6 crosstalk regulates Ral dependent exocyst trafficking and anchorage independent growth signalling.

    PubMed

    Pawar, Archana; Meier, Jeremy A; Dasgupta, Anwesha; Diwanji, Neha; Deshpande, Neha; Saxena, Kritika; Buwa, Natasha; Inchanalkar, Siddhi; Schwartz, Martin Alexander; Balasubramanian, Nagaraj

    2016-09-01

    Integrin dependent regulation of growth factor signalling confers anchorage dependence that is deregulated in cancers. Downstream of integrins and oncogenic Ras the small GTPase Ral is a vital mediator of adhesion dependent trafficking and signalling. This study identifies a novel regulatory crosstalk between Ral and Arf6 that controls Ral function in cells. In re-adherent mouse fibroblasts (MEFs) integrin dependent activation of RalA drives Arf6 activation. Independent of adhesion constitutively active RalA and RalB could both however activate Arf6. This is further conserved in oncogenic H-Ras containing bladder cancer T24 cells, which express anchorage independent active Ral that supports Arf6 activation. Arf6 mediates active Ral-exocyst dependent delivery of raft microdomains to the plasma membrane that supports anchorage independent growth signalling. Accordingly in T24 cells the RalB-Arf6 crosstalk is seen to preferentially regulate anchorage independent Erk signalling. Active Ral we further find uses a Ral-RalBP1-ARNO-Arf6 pathway to mediate Arf6 activation. This study hence identifies Arf6, through this regulatory crosstalk, to be a key downstream mediator of Ral isoform function along adhesion dependent pathways in normal and cancer cells. PMID:27269287

  2. Progress toward developing high performance immersion compatible materials and processes

    NASA Astrophysics Data System (ADS)

    Petrillo, Karen; Patel, Kaushal; Chen, Rex; Li, Wenjie; Kwong, Ranee; Lawson, Peggy; Varanasi, Rao; Robinson, Chris; Holmes, Steven J.; Gil, Dario; Kimmel, Kurt; Slezak, Mark; Dabbagh, Gary; Chiba, Takashi; Shimokawa, Tsutomu

    2005-05-01

    To make immersion lithography a reality in manufacturing, several challenges related to materials and defects must be addressed. Two such challenges include the development of water immersion compatible materials, and the vigorous pursuit of defect reduction with respect to both the films and the processes. Suitable resists and topcoats must be developed to be compatible with the water-soaked environment during exposure. Going beyond the requisite studies of component leaching from films into the water, and absorption of water into the films, application-specific optimization of photoresists and top coats will be required. This would involve an understanding of how a wide array of resist chemistry and formulations behave under immersion conditions. The intent of this paper is to compare lithographic performance under immersion and dry conditions of resists containing different polymer platforms, protecting groups, and formulations. The compatibility of several developer-soluble top-coat materials with a variety of resists is also studied with emphasis on profile control issues. With respect to defects, the sources are numerous. Bubbles and particles created during the imaging process, material remnants from incomplete removal of topcoats, and image collapse as related to resist swelling from water infusion are all sources of yield-limiting defects. Parallel efforts are required in the material development cycle focusing both on meeting the lithographic requirements, and on understanding and eliminating sources of defects. In this paper, efforts in the characterization and reduction of defects as related to materials chemistry and processing effects will be presented.

  3. Tissue optical immersion clearing.

    PubMed

    Genina, Elina A; Bashkatov, Alexey N; Tuchin, Valery V

    2010-11-01

    In this article, we discuss the optical immersion method based on refractive index matching of scatterers (e.g., collagen, elastin fibers, cells and cell compartments) and the ground material (interstitial fluid and/or cytoplasm) of tissue and blood under the action of exogenous optical clearing agents. We analyze the optical clearing of fibrous and cell-structured tissues and blood from the point of view of receiving more valuable, normally hidden, information from spectroscopic and polarization measurements, confocal microscopy, optical coherence and optical projection tomography, as well as from nonlinear spectroscopies, such as two-photon fluorescence and second-harmonic generation techniques. Some important applications of the immersion technique to glucose sensing, drug delivery monitoring, improvements of image contrast and imaging depth, nondistortive delivery of laser radiation and precision tissue laser photodisruption, among others, are also described. PMID:21050092

  4. Overlay progress in EUV lithography towards adoption for manufacturing

    NASA Astrophysics Data System (ADS)

    Hermans, Jan V.; Laidler, David; Pigneret, Charles; van Dijk, Andre; Voznyi, Oleg; Dusa, Mircea; Hendrickx, Eric

    2011-04-01

    Extreme Ultra-Violet (EUV) lithography is a candidate for semiconductor manufacturing for the 16nm technology node and beyond. Due to the very short wavelength of 13.5nm, EUV lithography provides the capability to continue single exposure scaling with improved resolution and higher pattern fidelity compared to 193nm immersion lithography. However, reducing the wavelength brings new equipment and process challenges. To enable EUV photon transmission through the optical system, the entire optical path of an EUV exposure tool operates under vacuum, and in addition reticle and optics are reflective. To obtain the required CD and overlay performance, both wafer and reticle front surfaces need to have near-perfect flatness, as non-flatness directly contributes to focus and image placement errors, in the case of the reticle due to non-telecentricity. Traditional vacuum chucks, both for reticle and wafer, cannot be used and are replaced by electrostatic chucks. Any contribution of this new clamping method on CD and overlay control therefore needs to be investigated, including avoidance of particle contamination over time. This work was performed on ASML's EUV Alpha Demo Tool (ADT). We investigated the different, non-conventional contributions to overlay control on the ADT, with particular attention to the wafer clamping performance of the exposure chuck. We demonstrate that we were able to improve the overlay performance by compensating for the wafer clamping error during the wafer alignment sequence. The impact of different wafer types on overlay was also evaluated. In addition to clamping effects, thermal effects have also been shown to impact overlay and were evaluated by monitoring the thermal behavior of a wafer during exposure on the ADT and correlating to the resulting overlay.

  5. Maskless, resistless ion beam lithography

    SciTech Connect

    Ji, Qing

    2003-03-10

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O{sub 2}{sup +}, BF{sub 2}{sup +}, P{sup +} etc., for surface modification and doping applications. With optimized source condition, around 85% of BF{sub 2}{sup +}, over 90% of O{sub 2}{sup +} and P{sup +} have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He{sup +} beam is as high as 440 A/cm{sup 2} {center_dot} Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O{sub 2}{sup +} ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O{sub 2}{sup +} ions with the dose of 10{sup 15} cm{sup -2}. The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features

  6. Extending single-exposure patterning towards 38-nm half-pitch using 1.35 NA immersion

    NASA Astrophysics Data System (ADS)

    Bouchoms, Igor; Engelen, Andre; Mulkens, Jan; Boom, Herman; Moerman, Richard; Liebregts, Paul; de Graaf, Roelof; van Veen, Marieke; Thomassen, Patrick; Emer, Wolfgang; Sperling, Frank

    2009-03-01

    Immersion lithography started to become the main workhorse for volume production of 45-nm devices, and while waiting for EUV lithography, immersion will continue to be the main technology for further shrinks. In a first step single exposure can be stretched towards the 0.25 k1 limit, after which various double patterning methods are lining up to print 32-nm and even 22-nm devices. The immersion exposure system plays a key role here, and continuous improvement steps are required to support tighter CD and overlay budgets. Additionally cost of ownership (COO) needs to be reduced and one important way to achieve this is to increase the wafer productivity. In this paper we discuss the design and performance of a new improved immersion exposure system XT:1950i. This system will extend immersion towards 38-nm half pitch resolution using a 1.35 NA lens and extreme off axis illumination (e.g. dipole). The system improvements result in better CDU, more accurate overlay towards 4-nm and higher wafer productivity towards 148- wph. Last but not least a next step in immersion technology is implemented. A novel immersion hood is introduced giving more robust low and stable defects performance.

  7. Abnormalities of the ARF-p53 pathway in primary angiosarcomas of the liver.

    PubMed

    Weihrauch, Markus; Markwarth, Anett; Lehnert, Gerhard; Wittekind, Christian; Wrbitzky, Renate; Tannapfel, Andrea

    2002-09-01

    The INK4a-ARF locus, located on chromosome 9p21, encodes 2 cell cycle-regulatory proteins, p16(INKa) and p14(ARF), acting through the Rb-CDK4 and p53 pathways. This study was done to investigate the contribution of the INK4a-ARF locus in tumorigenesis of angiosarcoma of the liver. Alterations of p14(ARF), p16(INKa), and p53 in primary liver angiosarcoma from 19 patients were analyzed by methylation-specific polymerase chain reaction (MSP), restriction enzyme-related polymerase chain reaction (RE-PCR), microsatellite analysis, and DNA sequencing. As a control group, 12 angiosarcomas from other organs were analyzed. Promoter methylation of p14(ARF) was found in 5 of 19 cases (26%), and p16(INKa) showed aberrant promoter methylation in 12 of 19 cases (63%). One tumor (5%) had homozygous deletion of the INK4a-ARF locus. Methylation and deletion correlated with loss of mRNA transcription. Methylated p14(ARF) appeared in the context of a methylated p16(INKa) promoter in 3 cases of the 5 angiosarcomas methylated at p14(ARF). p14(ARF) aberrant methylation was not related to the presence of p53 mutations, which was detected in 6 of 19 (32%) cases. Alterations of the INK4a-ARF locus or p53 as were not established independent prognostic factors in these tumors. In conclusion, our data indicate that the INK4a-ARF locus is frequently inactivated in angiosarcoma of the liver and occurs independently of p53 mutations. PMID:12378512

  8. Molecular design and synthesis of 3-oxocyclohexyl methacrylate for ArF and KrF excimer laser resist

    SciTech Connect

    Kozaki, Koji; Kaimoto, Yuko; Takahashi, Makoto

    1994-09-01

    The authors originally designed 3-oxocyclohexyl methacrylate (OCMA) for an acid-labile component in chemical amplification. The key concept of the molecular design of the 3-oxocyclohexyl substituent was the introduction of acidic protons at the {alpha}-position of the elimination site by using a ketone functional group. OCMA was synthesized by esterification of 1,3-cyclohexanediol and methacryloyl chloride followed by pyridinium dichromate oxidation. Using AIBN as an initiator, the authors also prepared poly(OCMA-co-AdMA) (AdMA: adamantyl methacrylate) by a thermally induced radical copolymerization of OCMA and AdMA. The resist comprises the copolymer and 10 wt % of triphenylsulfonium hexafluoroantimonate as a photoacid generator (PAG). This resist has high sensitivity, good thermal stability, good dry etch resistance, and good postexposure delay durability. Using a KrF excimer laser stepper (NA = 0.45) and 2-propanol mixed aqueous alkali developer, the authors obtained 0.3-{mu}m line and space patterns with this resist. A resist with 1 wt % of the PAG has an acceptable transmittance at 193 nm, proving that this resist is suitable for ArF excimer lithography. 29 refs., 10 figs., 2 tabs.

  9. Nuclear trafficking of EGFR by Vps34 represses Arf expression to promote lung tumor cell survival.

    PubMed

    Dayde, D; Guerard, M; Perron, P; Hatat, A-S; Barrial, C; Eymin, B; Gazzeri, S

    2016-07-28

    Epidermal growth factor receptor (EGFR) is a cell surface receptor that has an essential role in cell proliferation and survival, and overexpression of EGFR is a common feature of human cancers. In Non-small-cell lung cancer (NSCLC), activating mutations of EGFR have also been described. We recently showed that mutant EGFR-L858R inhibits the expression of the p14ARF tumor-suppressor protein to promote cell survival. In this study, we defined the molecular bases by which EGFR controls Arf expression. Using various lung tumor models, we showed that EGF stimulation inhibits Arf transcription by a mechanism involving the nuclear transport and recruitment of EGFR to the Arf promoter. We unraveled the vesicular trafficking protein Vps34 as a mediator of EGFR nuclear trafficking and showed that its neutralization prevents the accumulation of EGFR to the Arf promoter in response to ligand activation. Finally, in lung tumor cells that carry mutant EGFR-L858R, we demonstrated that inhibition of Vps34 using small interfering RNA restrains nuclear EGFR location and restores Arf expression leading to apoptosis. These findings identify the Arf tumor suppressor as a new transcriptional target of nuclear EGFR and highlight Vps34 as an important regulator of the nuclear EGFR/Arf survival pathway. As a whole, they provide a mechanistic explanation to the inverse correlation between nuclear expression of EGFR and overall survival in NSCLC patients. PMID:26686095

  10. Arf6 plays an early role in platelet activation by collagen and convulxin.

    PubMed

    Choi, Wangsun; Karim, Zubair A; Whiteheart, Sidney W

    2006-04-15

    Small GTPases play critical roles in hemostasis, though the roster of such molecules in platelets is not complete. In this study, we report the presence of Ras-related GTPases of the ADP-ribosylation factor (Arf) family. Platelets contain Arf1 or 3 and Arf6, with the latter being predominantly membrane associated. Using effector domain pull-down assays, we show, counter to other GTPases, that Arf6-GTP is present in resting platelets and decreases rapidly upon activation with collagen or convulxin. This decrease does not completely rely on secondary agonists (ADP and thromboxane A2) or require integrin signaling. The decrease in free Arf6-GTP temporally precedes activation of Rho family GTPases (RhoA, Cdc42, and Rac1). Using a membrane-permeant, myristoylated peptide, which mimics the N-terminus of Arf6, we show that the Arf6-GTP decrease is essential for collagen- and convulxin-induced aggregation, platelet adherence, and spreading on collagen-coated glass. Treatment with this peptide also affects the activation of Rho family GTPases, but has little effect on RalA and Rap1 or on agonist-induced calcium mobilization. These data show that Arf6 is a key element in activation through GPVI, and is required for activation of the Rho family GTPases and the subsequent cytoskeletal rearrangements needed for full platelet function. PMID:16352809

  11. p14(ARF) Prevents Proliferation of Aneuploid Cells by Inducing p53-Dependent Apoptosis.

    PubMed

    Veneziano, Lorena; Barra, Viviana; Lentini, Laura; Spatafora, Sergio; Di Leonardo, Aldo

    2016-02-01

    Weakening the Spindle Assembly Checkpoint by reduced expression of its components induces chromosome instability and aneuploidy that are hallmarks of cancer cells. The tumor suppressor p14(ARF) is overexpressed in response to oncogenic stimuli to stabilize p53 halting cell progression. Previously, we found that lack or reduced expression of p14(ARF) is involved in the maintenance of aneuploid cells in primary human cells, suggesting that it could be part of a pathway controlling their proliferation. To investigate this aspect further, p14(ARF) was ectopically expressed in HCT116 cells after depletion of the Spindle Assembly Checkpoint MAD2 protein that was used as a trigger for aneuploidy. p14(ARF) Re-expression reduced the number of aneuploid cells in MAD2 post-transcriptionally silenced cells. Also aberrant mitoses, frequently displayed in MAD2-depleted cells, were decreased when p14(ARF) was expressed at the same time. In addition, p14(ARF) ectopic expression in MAD2-depleted cells induced apoptosis associated with increased p53 protein levels. Conversely, p14(ARF) ectopic expression did not induce apoptosis in HCT116 p53KO cells. Collectively, our results suggest that the tumor suppressor p14(ARF) may have an important role in counteracting proliferation of aneuploid cells by activating p53-dependent apoptosis. PMID:25752701

  12. Centaurin-alpha1 and KIF13B kinesin motor protein interaction in ARF6 signalling.

    PubMed

    Kanamarlapudi, V

    2005-12-01

    The ARF (ADP-ribosylation factor) family of small GTPases regulate intracellular membrane trafficking by cycling between an inactive GDP- and an active GTP-bound form. Among the six known mammalian ARFs (ARF1-ARF6), ARF6 is the least conserved and plays critical roles in membrane trafficking and cytoskeletal dynamics near the cell surface. Since ARFs have undetectable levels of intrinsic GTP binding and hydrolysis, they are totally dependent on extrinsic GEFs (guanine nucleotide-exchange factors) for GTP binding and GAPs (GTPase-activating proteins) for GTP hydrolysis. We have recently isolated a novel KIF (kinesin) motor protein (KIF13B) that binds to centaurin-alpha1, an ARF6GAP that binds to the second messenger PIP3 [PtdIns(3,4,5)P3]. KIFs transport intracellular vesicles and recognize their cargo by binding to proteins (receptors) localized on the surface of the cargo vesicles. Identification of centaurin-alpha1 as a KIF13B interactor suggests that KIF13B may transport ARF6 and/or PIP3 using centaurin-alpha1 as its receptor. This paper reviews the studies carried out to assess the interaction and regulation of centaurin-alpha1 by KIF13B. PMID:16246098

  13. Simulation of acute reference dose (ARfD) settings for pesticides in Japan.

    PubMed

    Yoshida, Midori; Suzuki, Daisetsu; Matsumoto, Kiyoshi; Shirota, Mariko; Inoue, Kaoru; Takahashi, Miwa; Morita, Takeshi; Ono, Atsushi

    2013-01-01

    In order to develop guidelines for setting acute reference doses (ARfDs) for pesticides in Japan, we conducted simulations of ARfD settings based on evaluation reports for 201 pesticides assessed by the Food Safety Commission (FSC) in Japan over the last 8 years. Our conceptual principles were based on the concepts written by Solecki et al. (2005) and were adapted for toxicological data required in Japan. Through this process, we were able to set the ARfDs for over 90% of the 201 pesticides tested. The studies that provided the rationale for ARfD setting were primarily reproductive and developmental toxicity studies, acute neurotoxicity studies, and pharmacology studies. For approximately 30% of the pesticides simulated in the present study, it was not necessary to establish ARfDs. Some of the simulated ARfDs resulting from their endpoints may be conservative estimates, because the evaluation reports were written for acceptable daily intake settings. Thus, it was sometimes difficult to distinguish acute toxic alerts from repeated toxicities. We were unable to set an ARfD for 14 pesticides because of insufficient data on acute toxicities. This could be improved by more complete recordkeeping. Furthermore, we categorized the 201 pesticides by mechanism of action or chemical structure. Our simulation indicates that the conceptual framework presented here can be used as a basis for the development of guidelines on ARfD settings for pesticides in Japan. PMID:23535399

  14. Pathological functions of the small GTPase Arf6 in cancer progression: Tumor angiogenesis and metastasis

    PubMed Central

    Hongu, Tsunaki; Yamauchi, Yohei; Funakoshi, Yuji; Katagiri, Naohiro; Ohbayashi, Norihiko; Kanaho, Yasunori

    2016-01-01

    ABSTRACT Although several lines of evidence have shown that the small GTPase ADP-ribosylation factor 6 (Arf6) plays pivotal roles in cancer progression of several types of cancers, little is known about the functions of Arf6 in tumor microenvironment. We demonstrated that Arf6 in vascular endothelial cells (VECs) plays a crucial role in tumor angiogenesis and growth using endothelial cell-specific Arf6 conditional knockout mice into which B16 melanoma and Lewis lung carcinoma cells were implanted. It was also found that Arf6 in VECs positively regulates hepatocyte growth factor (HGF)-induced β1 integrin recycling, which is a critical event for tumor angiogenesis by promoting cell migration. Importantly, pharmacological inhibition of HGF-induced Arf6 activation significantly suppresses tumor angiogenesis and growth in mice, suggesting that Arf6 signaling would be a potential target for anti-angiogenic therapy. In this manuscript, we summarize the multiple roles of Arf6 in cancer progression, particularly in cancer cell invasion/metastasis and our recent findings on tumor angiogenesis, and discuss a possible approach to develop innovative anti-cancer drugs. PMID:26909552

  15. Stage Cylindrical Immersive Display

    NASA Technical Reports Server (NTRS)

    Abramyan, Lucy; Norris, Jeffrey S.; Powell, Mark W.; Mittman, David S.; Shams, Khawaja S.

    2011-01-01

    Panoramic images with a wide field of view intend to provide a better understanding of an environment by placing objects of the environment on one seamless image. However, understanding the sizes and relative positions of the objects in a panorama is not intuitive and prone to errors because the field of view is unnatural to human perception. Scientists are often faced with the difficult task of interpreting the sizes and relative positions of objects in an environment when viewing an image of the environment on computer monitors or prints. A panorama can display an object that appears to be to the right of the viewer when it is, in fact, behind the viewer. This misinterpretation can be very costly, especially when the environment is remote and/or only accessible by unmanned vehicles. A 270 cylindrical display has been developed that surrounds the viewer with carefully calibrated panoramic imagery that correctly engages their natural kinesthetic senses and provides a more accurate awareness of the environment. The cylindrical immersive display offers a more natural window to the environment than a standard cubic CAVE (Cave Automatic Virtual Environment), and the geometry allows multiple collocated users to simultaneously view data and share important decision-making tasks. A CAVE is an immersive virtual reality environment that allows one or more users to absorb themselves in a virtual environment. A common CAVE setup is a room-sized cube where the cube sides act as projection planes. By nature, all cubic CAVEs face a problem with edge matching at edges and corners of the display. Modern immersive displays have found ways to minimize seams by creating very tight edges, and rely on the user to ignore the seam. One significant deficiency of flat-walled CAVEs is that the sense of orientation and perspective within the scene is broken across adjacent walls. On any single wall, parallel lines properly converge at their vanishing point as they should, and the sense of

  16. Genome-wide analysis of Aux/IAA and ARF gene families in Populus trichocarpa

    SciTech Connect

    Kalluri, Udaya C; DiFazio, Stephen P; Brunner, A.; Tuskan, Gerald A

    2007-01-01

    Auxin/Indole-3-Acetic Acid (Aux/IAA) and Auxin Response Factor (ARF) transcription factors are key regulators of auxin responses in plants. A total of 35 Aux/IAA and 39 ARF genes were identified in the Populus genome. Comparative phylogenetic analysis revealed that the subgroups PoptrARF2, 6, 9 and 16 and PoptrIAA3, 16, 27 and 29 have differentially expanded in Populus relative to Arabidopsis. Activator ARFs were found to be two fold-overrepresented in the Populus genome. PoptrIAA and PoptrARF gene families appear to have expanded due to high segmental and low tandem duplication events. Furthermore, expression studies showed that genes in the expanded PoptrIAA3 subgroup display differential expression. The gene-family analysis reported here will be useful in conducting future functional genomics studies to understand how the molecular roles of these large gene families translate into a diversity of biologically meaningful auxin effects.

  17. Why bother with x-ray lithography?

    NASA Astrophysics Data System (ADS)

    Smith, Henry I.; Schattenburg, Mark L.

    1992-07-01

    The manufacture of state-of-the-art integrated circuits uses UV optical projection lithography. Conventional wisdom (i.e., the trade journals) holds that this technology will take the industry to quarter-micrometer minimum features sizes and below. So, why bother with X-ray lithography? The reason is that lithography is a 'system problem', and proximity X-ray lithography is better matched to that system problem than any other technology, once the initial investment is surmounted. X-ray lithography offers the most cost-effective path to the future of ultra-large-scale integrated circuits with feature sizes of tenth micrometer and below (i.e., gigascale electronics and quantum-effect electronics).

  18. EUV lithography performance for manufacturing: status and outlook

    NASA Astrophysics Data System (ADS)

    Pirati, Alberto; Peeters, Rudy; Smith, Daniel; Lok, Sjoerd; van Noordenburg, Martijn; van Es, Roderik; Verhoeven, Eric; Meijer, Henk; Minnaert, Arthur; van der Horst, Jan-Willem; Meiling, Hans; Mallmann, Joerg; Wagner, Christian; Stoeldraijer, Judon; Fisser, Geert; Finders, Jo; Zoldesi, Carmen; Stamm, Uwe; Boom, Herman; Brandt, David; Brown, Daniel; Fomenkov, Igor; Purvis, Michael

    2016-03-01

    NXE:3300B scanners have been operational at customer sites since almost two years, and the NXE:3350B, the 4th generation EUV system, has started shipping at the end of 2015. All these exposure tools operate using MOPA pre-pulse source technology, which enabled significant productivity scaling, demonstrated at customers and at ASML. Having achieved the required throughput to support device development, the main priority of the ASML EUV program has shifted towards improving stability and availability. Continuous progresses in defectivity reduction and in the realization of a reticle pellicle are taking place at increased speed. Today's overlay and imaging results are in line with the requirements of 7nm logic devices; Matched Machine overlay to ArF immersion below 2.5 nm and full wafer CDU performance of less than 1.0nm are regularly achieved. The realization of an intensity loss-less illuminator and improvements in resist formulation are significant progress towards enabling the use of EUV technology for 5nm logic devices at full productivity. This paper will present an overview of the status of the ASML EUV program and product roadmap by reviewing the current performance and on-going developments in productivity, imaging, overlay and mask defectivity reduction.

  19. Performance overview and outlook of EUV lithography systems

    NASA Astrophysics Data System (ADS)

    Pirati, Alberto; Peeters, Rudy; Smith, Daniel; Lok, Sjoerd; Minnaert, Arthur; van Noordenburg, Martijn; Mallmann, Jörg; Harned, Noreen; Stoeldraijer, Judon; Wagner, Christian; Zoldesi, Carmen; van Setten, Eelco; Finders, Jo; de Peuter, Koen; de Ruijter, Chris; Popadic, Milos; Huang, Roger; Lin, Martin; Chuang, Frank; van Es, Roderik; Beckers, Marcel; Brandt, David; Farrar, Nigel; Schafgans, Alex; Brown, Daniel; Boom, Herman; Meiling, Hans; Kool, Ron

    2015-03-01

    Multiple NXE:3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm for 16nm dense lines and 1.1 nm for 20nm isolated space and stable matched overlay performance with ArF immersion scanner of less than 4nm provide the required lithographic performance for these device development activities. Steady progresses in source power have been achieved in the last 12 months, with 100Watts (W) EUV power capability demonstrated on multiple machines. Power levels up to 90W have been achieved on a customer machine, while 110W capability has been demonstrated in the ASML factory. Most NXE:3300 installed at customers have demonstrated the capability to expose 500 wafers per day, and one field system upgraded to the 80W configuration has proven capable of exposing 1,000 wafers per day. Scanner defectivity keeps being reduced by a 10x factor each year, while the first exposures obtained with full size EUV pellicles show no appreciable difference in CDU when compared to exposures done without pellicle. The 4th generation EUV system, the NXE: 3350, is being qualified in the ASML factory.

  20. Regulators and Effectors of Arf GTPases in Neutrophils

    PubMed Central

    Gamara, Jouda; Chouinard, François; Davis, Lynn; Aoudjit, Fawzi; Bourgoin, Sylvain G.

    2015-01-01

    Polymorphonuclear neutrophils (PMNs) are key innate immune cells that represent the first line of defence against infection. They are the first leukocytes to migrate from the blood to injured or infected sites. This process involves molecular mechanisms that coordinate cell polarization, delivery of receptors, and activation of integrins at the leading edge of migrating PMNs. These phagocytes actively engulf microorganisms or form neutrophil extracellular traps (NETs) to trap and kill pathogens with bactericidal compounds. Association of the NADPH oxidase complex at the phagosomal membrane for production of reactive oxygen species (ROS) and delivery of proteolytic enzymes into the phagosome initiate pathogen killing and removal. G protein-dependent signalling pathways tightly control PMN functions. In this review, we will focus on the small monomeric GTPases of the Arf family and their guanine exchange factors (GEFs) and GTPase activating proteins (GAPs) as components of signalling cascades regulating PMN responses. GEFs and GAPs are multidomain proteins that control cellular events in time and space through interaction with other proteins and lipids inside the cells. The number of Arf GAPs identified in PMNs is expanding, and dissecting their functions will provide important insights into the role of these proteins in PMN physiology. PMID:26609537

  1. Next-generation 193-nm laser for sub-100-nm lithography

    NASA Astrophysics Data System (ADS)

    Duffey, Thomas P.; Blumenstock, Gerry M.; Fleurov, Vladimir B.; Pan, Xiaojiang; Newman, Peter C.; Glatzel, Holger; Watson, Tom A.; Erxmeyer, J.; Kuschnereit, Ralf; Weigl, Bernhard

    2001-09-01

    The next generation 193 nm (ArF) laser has been designed and developed for high-volume production lithography. The NanoLithTM 7000, offering 20 Watts average output power at 4 kHz repetition rates is designed to support the highest exposure tool scan speeds for maximum productivity and wafer throughput. Fundamental design changes made to the laser core technologies are described. These advancements in core technology support the delivery of highly line-narrowed light with lithography, meeting specifications for bandwidth, dose stability (+/- 0.3% in 20 ms window) and wavelength stability (+/- 0.05 pm average line center error in 20 ms window) across 2 - 4 kHz repetition rates. Improvements in optical materials and coatings have led to increased lifetime of optics modules. Optimization of the discharge electrode design has increased chamber lifetime. Early life-testing indicates that the NanoLithTM core technologies have the potential for 400% reduction of cost of consumables as compared to its predecessor, the ELX-5000A and has been discussed elsewhere.

  2. Mask lithography for display manufacturing

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Ekberg, P.

    2010-05-01

    The last ten years have seen flat displays conquer our briefcases, desktops, and living rooms. There has been an enormous development in production technology, not least in lithography and photomasks. Current masks for large displays are more than 2 m2 and make 4-6 1X prints on glass substrates that are 9 m2. One of the most challenging aspects of photomasks for displays is the so called mura, stripes or blemishes which cause visible defects in the finished display. For the future new and even tighter maskwriter specifications are driven by faster transistors and more complex pixel layouts made necessary by the market's wish for still better image quality, multi-touch panels, 3D TVs, and the next wave of e-book readers. Large OLED screens will pose new challenges. Many new types of displays will be lowcost and use simple lithography, but anything which can show video and high quality photographic images needs a transistor backplane and sophisticated masks for its production.

  3. Kinetic analysis of GTP hydrolysis catalysed by the Arf1-GTP–ASAP1 complex

    PubMed Central

    Luo, Ruibai; Ahvazi, Bijan; Amariei, Diana; Shroder, Deborah; Burrola, Beatriz; Losert, Wolfgang; Randazzo, Paul A.

    2006-01-01

    Arf (ADP-ribosylation factor) GAPs (GTPase-activating proteins) are enzymes that catalyse the hydrolysis of GTP bound to the small GTP-binding protein Arf. They have also been proposed to function as Arf effectors and oncogenes. We have set out to characterize the kinetics of the GAP-induced GTP hydrolysis using a truncated form of ASAP1 [Arf GAP with SH3 (Src homology 3) domain, ankyrin repeats and PH (pleckstrin homology) domains 1] as a model. We found that ASAP1 used Arf1-GTP as a substrate with a kcat of 57±5 s−1 and a Km of 2.2±0.5 μM determined by steady-state kinetics and a kcat of 56±7 s−1 determined by single-turnover kinetics. Tetrafluoroaluminate (AlF4−), which stabilizes complexes of other Ras family members with their cognate GAPs, also stabilized a complex of Arf1-GDP with ASAP1. As anticipated, mutation of Arg-497 to a lysine residue affected kcat to a much greater extent than Km. Changing Trp-479, Iso-490, Arg-505, Leu-511 or Asp-512 was predicted, based on previous studies, to affect affinity for Arf1-GTP. Instead, these mutations primarily affected the kcat. Mutants that lacked activity in vitro similarly lacked activity in an in vivo assay of ASAP1 function, the inhibition of dorsal ruffle formation. Our results support the conclusion that the Arf GAP ASAP1 functions in binary complex with Arf1-GTP to induce a transition state towards GTP hydrolysis. The results have led us to speculate that Arf1-GTP–ASAP1 undergoes a significant conformational change when transitioning from the ground to catalytically active state. The ramifications for the putative effector function of ASAP1 are discussed. PMID:17112341

  4. Enabling immersive simulation.

    SciTech Connect

    McCoy, Josh; Mateas, Michael; Hart, Derek H.; Whetzel, Jonathan; Basilico, Justin Derrick; Glickman, Matthew R.; Abbott, Robert G.

    2009-02-01

    The object of the 'Enabling Immersive Simulation for Complex Systems Analysis and Training' LDRD has been to research, design, and engineer a capability to develop simulations which (1) provide a rich, immersive interface for participation by real humans (exploiting existing high-performance game-engine technology wherever possible), and (2) can leverage Sandia's substantial investment in high-fidelity physical and cognitive models implemented in the Umbra simulation framework. We report here on these efforts. First, we describe the integration of Sandia's Umbra modular simulation framework with the open-source Delta3D game engine. Next, we report on Umbra's integration with Sandia's Cognitive Foundry, specifically to provide for learning behaviors for 'virtual teammates' directly from observed human behavior. Finally, we describe the integration of Delta3D with the ABL behavior engine, and report on research into establishing the theoretical framework that will be required to make use of tools like ABL to scale up to increasingly rich and realistic virtual characters.

  5. 65-nm full-chip implementation using double dipole lithography

    NASA Astrophysics Data System (ADS)

    Hsu, Stephen D.; Chen, J. Fung; Cororan, Noel; Knose, William T.; Van Den Broeke, Douglas J.; Laidig, Thomas L.; Wampler, Kurt E.; Shi, Xuelong; Hsu, Michael; Eurlings, Mark; Finders, Jo; Chiou, Tsann-Bim; Socha, Robert J.; Conley, Will; Hsieh, Yen W.; Tuan, Steve; Hsieh, Frank

    2003-06-01

    Double Dipole Lithography (DDL) has been demonstrated to be capable of patterning complex 2D patterns. Due to inherently high aerial imaging contrast, especially for dense features, we have found that it has a very good potential to meet manufacturing requirements for the 65nm node using ArF binary chrome masks. For patterning in the k1<0.35 regime without resorting to hard phase-shift masks (PSMs), DDL is one unique Resolution Enhancement Technique (RET) which can achieve an acceptable process window. To utilize DDL for printing actual IC devices, the original design data must be decomposed into "vertical (V)" and "horizontal (H)" masks for the respective X- and Y-dipole exposures. An improved two-pass, model-based, DDL mask data processing methodology has been established. It is capable of simultaneously converting complex logic and memory mask patterns into DDL compatible mask layout. To maximize the overlapped process window area, we have previously shown that the pattern-shielding algorithm must be intelligently applied together with both Scattering Bars (SBs) and model-based OPC (MOPC). Due to double exposures, stray light must be well-controlled to ensure uniform printing across the entire chip. One solution to minimize stray light is to apply large patches of solid chrome in open areas to reduce the background transmission during exposure. Unfortunately, this is not feasible for a typical clear-field poly gate masks to be patterned by a positive resist process. In this work, we report a production-worthy DDL mask pattern decomposition scheme for full-chip application. A new generation of DDL technology reticle set has been developed to verify the printing performance. Shielding is a critical part of the DDL. An innovative shielding scheme has been developed to protect the critical features and minimize the impact of stray light during double exposure.

  6. p19Arf is required for the cellular response to chronic DNA damage

    PubMed Central

    Bieging-Rolett, Kathryn T.; Johnson, Thomas M.; Brady, Colleen A.; Beaudry, Veronica G.; Pathak, Navneeta; Han, Shuo; Attardi, Laura D.

    2015-01-01

    The p53 tumor suppressor is a stress sensor, driving cell-cycle arrest or apoptosis in response to DNA damage or oncogenic signals. p53 activation by oncogenic signals relies on the p19Arf tumor suppressor, while p53 activation downstream of acute DNA damage is reported to be p19Arf-independent. Accordingly, p19Arf-deficient mouse embryo fibroblasts (MEFs) arrest in response to acute DNA damage. However, p19Arf is required for replicative senescence, a condition associated with an activated DNA damage response, as p19Arf−/− MEFs do not senesce after serial passage. A possible explanation for these seemingly disparate roles for p19Arf is that acute and chronic DNA damage responses are mechanistically distinct. Replicative senescence may result from chronic, low-dose DNA damage responses in which p19Arf has a specific role. We therefore examined the role of p19Arf in cellular responses to chronic, low-dose DNA damaging agent treatment by maintaining MEFs in low oxygen and administering 0.5 Gy γ-irradiation daily or 150μM hydroxyurea, a replication stress-inducer. In contrast to their response to acute DNA damage, p19Arf−/− MEFs exposed to chronic DNA damage do not senesce, revealing a selective role for p19Arf in senescence upon low-level, chronic DNA damage. We show further that p53 pathway activation in p19Arf−/− MEFs exposed to chronic DNA damage is attenuated relative to wild-type MEFs, suggesting a role for p19Arf in fine-tuning p53 activity. However, combined Nutlin3a and chronic DNA damaging agent treatment is insufficient to promote senescence in p19Arf−/− MEFs, suggesting that the role of p19Arf in the chronic DNA damage response may be partially p53-independent. These data suggest the importance of p19Arf for the cellular response to the low-level DNA damage incurred in culture or upon oncogene expression, providing new insight into how p19Arf serves as a tumor suppressor. Moreover, our study helps reconcile reports suggesting crucial

  7. Phase-shifted assist feature OPC for sub-45-nm node optical lithography

    NASA Astrophysics Data System (ADS)

    Yoon, Gi-Sung; Kim, Hee-Bom; Lee, Jeung-Woo; Choi, Seong-Woon; Han, Woo-Sung

    2007-03-01

    Hyper numerical aperture (NA) implemented in immersion exposure system makes the semiconductor business enable to enter sub-45nm node optical lithography. Optical proximity correction(OPC) utilizing SRAF has been an essential technique to control critical dimension (CD) and to enhance across pitch performance in sub-wavelength lithography. Mask lithography, however, is getting more challenging with respect to patterning and processing sub-resolution assist features (SRAFs): the higher aspect ratio of mask structure, the more vulnerable. Mask manufacturing environment for DRAM and Flash becomes harsher mainly due to mask patterning problem especially pattern linearity, which causes pattern broken, inspection issue, and finally CD issue on wafer. When a pattern in relatively isolated pitches has small or large assist features, the assist features may bring unexpected CD or print on wafer. A frequency-preserving assist bar solution is the most preferred one, but it is difficult to realize for opaque assist features due to printability. In this paper, we propose a new type assist feature dubbed "Phase-shifted Assist Bar" to improve process window and to solve the resolution constraint of mask at sub-45nm manufacturing process node. The concept of phase-shift assist bar is applying phase-shift to SRAF realized with trench structure on general mask, such as Binary and Attenuated Phase-Shifted Mask (Att.PSM). The characteristics of phase-shift assist bar are evaluated with rigorous 3D lithography simulation and analyzed through verification mask, which is containing hugely various size and placement of main and assist feature. The analysis of verification mask has been done with aerial image verification tool. This work focuses on the performance of phase-shift assist bar as a promising OPC technique for "immersion era" in terms of resolution enhancement technique, optical proximity correction, and patterning on mask.

  8. Simultaneous Immersion Mirau Interferometry

    NASA Astrophysics Data System (ADS)

    Lyulko, Oleksandra

    The present work describes a novel imaging technique for label-free no-UV vibration-insensitive imaging of live cells in an epi-illumination geometry. This technique can be implemented in a variety of imaging applications. For example, it can be used for cell targeting as a part of a platform for targeted cell irradiations - single-cell microbeam. The goal of microbeam facilities is to provide biological researchers with tools to study the effects of ionizing radiation on live cells. A common way of cell labeling - fluorescent staining - may alter cellular metabolism and UV illumination presents potential damage for the genetic material. The new imaging technique will allow the researchers to separate radiation-induced effects from the effects caused by confounding factors like fluorescent staining or UV light. Geometry of irradiation endstations at some microbeam facilities precludes the use of transmitted light, e.g. in the Columbia University's Radiological Research Accelerator Facility microbeam endstation, where the ion beam exit window is located just below the sample. Imaging techniques used at such endstations must use epi-illumination. Mirau Interferometry is an epi-illumination, non-stain imaging modality suitable for implementation at a microbeam endstation. To facilitate interferometry and to maintain cell viability, it is desirable that cells stay in cell growth medium during the course of an experiment. To accommodate the use of medium, Immersion Mirau Interferometry has been developed. A custom attachment for a microscope objective has been designed and built for interferometric imaging with the possibility of immersion of the apparatus into cell medium. The implemented data collection algorithm is based on the principles of Phase-Shifting Interferometry. The largest limitation of Phase-Shifting Interferometry is its sensitivity to the vertical position of the sample. In environments where vibration isolation is difficult, this makes image

  9. Directed Self-assembly for Lithography Applications

    NASA Astrophysics Data System (ADS)

    Cheng, Joy

    2010-03-01

    Economics dictated that semiconductor devices need to be scaled approximately to 70 percent linearly in order to follow the pace of Moore's law and maintain cost effectiveness. Optical lithography has been the driving force for scaling; however, it approaches its physical limit to print patterns beyond 22nm node. Directed self-assembly (DSA), which combines ``bottom-up'' self-assembled polymers and ``top-down'' lithographically defined substrates, has been considered as a potential candidate to extend optical lithography. Benefit from nanometer-scale self-assembly features and the registration precision of advanced lithography, DSA provides precise and programmable nanopatterns beyond the resolution limit of conventional lithography. We have demonstrated DSA concepts including frequency multiplication and pattern rectification using guiding prepattern with proper chemical and topographical information generated by e-beam lithography. In addition, we seek to integrate DSA with 193 nm optical lithography in a straightforward manner in order to move DSA from the research stage to a viable manufacturing technology. Recently, we implemented various integration strategies using photolithography to produce guiding patterns for DSA. This new ability enables DSA to be applied to large areas with state-of-the-art lithography facilities.

  10. Immersion echelle spectrograph

    DOEpatents

    Stevens, Charles G.; Thomas, Norman L.

    2000-01-01

    A small spectrograph containing no moving components and capable of providing high resolution spectra of the mid-infrared region from 2 microns to 4 microns in wavelength. The resolving power of the spectrograph exceeds 20,000 throughout this region and at an optical throughput of about 10.sup.-5 cm.sup.2 sr. The spectrograph incorporates a silicon immersion echelle grating operating in high spectral order combined with a first order transmission grating in a cross-dispersing configuration to provide a two-dimensional (2-D) spectral format that is focused onto a two-dimensional infrared detector array. The spectrometer incorporates a common collimating and condensing lens assembly in a near aberration-free axially symmetric design. The spectrometer has wide use potential in addition to general research, such as monitoring atmospheric constituents for air quality, climate change, global warming, as well as monitoring exhaust fumes for smog sources or exhaust plumes for evidence of illicit drug manufacture.

  11. Broadcasting presence: immersive television

    NASA Astrophysics Data System (ADS)

    Harrison, David; Lodge, Nicholas

    2000-06-01

    Being present at a live event is undeniably the most exciting way to experience any entertainment. This is true whether we are talking about a musical concert, a theatrical performance, a cricket match, or even a firework display. The ability to direct your gaze where you wish, to hear sounds from all around you, to experience the immediacy and expectation of an unscripted happening, to feel the buzz of the crowd and to smell the grass or smoke, are all sensory cues which contribute to the powerful experience of being there. This paper examines the ways in which entertainment media have attempted to recreate experiences which encourage the viewer to suspend disbelief and become part of a remote or recorded event. We introduce the concept of immersive television and look at some of the research, spanning many disciplines of science and art, which the ITC is conducting to explore the potential of this new medium.

  12. ArfGAP1 interacts with coat proteins through tryptophan-based motifs

    SciTech Connect

    Rawet, Moran; Levi-Tal, Sharon; Szafer-Glusman, Edith; Parnis, Anna; Cassel, Dan

    2010-04-09

    The Arf1 GTPase-activating protein ArfGAP1 regulates vesicular traffic through the COPI system. This protein consists of N-terminal catalytic domain, lipid packing sensors (the ALPS motifs) in the central region, and a carboxy part of unknown function. The carboxy part contains several diaromatic sequences that are reminiscent of motifs known to interact with clathrin adaptors. In pull-down experiments using GST-fused peptides from rat ArfGAP1, a peptide containing a {sup 329}WETF sequence interacted strongly with clathrin adaptors AP1 and AP2, whereas a major coatomer-binding determinant was identified within the extreme carboxy terminal peptide ({sup 405}AADEGWDNQNW). Mutagenesis and peptide competition experiments revealed that this determinant is required for coatomer binding to full-length ArfGAP1, and that interaction is mediated through the {delta}-subunit of the coatomer adaptor-like subcomplex. Evidence for a role of the carboxy motif in ArfGAP1-coatomer interaction in vivo is provided by means of a reporter fusion assay. Our findings point to mechanistic differences between ArfGAP1 and the other ArfGAPs known to function in the COPI system.

  13. The Ink4a/Arf Locus Is a Barrier to Direct Neuronal Transdifferentiation

    PubMed Central

    Price, James D.; Park, Ki-Youb; Chen, Jiadong; Salinas, Ryan D.; Cho, Mathew J.; Kriegstein, Arnold R.

    2014-01-01

    Non-neurogenic cell types, such as cortical astroglia and fibroblasts, can be directly converted into neurons by the overexpression of defined transcription factors. Normally, the cellular phenotype of such differentiated cells is remarkably stable and resists direct cell transdifferentiation. Here we show that the Ink4a/Arf (also known as Cdkn2a) locus is a developmental barrier to direct neuronal transdifferentiation induced by transcription factor overexpression. With serial passage in vitro, wild-type postnatal cortical astroglia become progressively resistant to Dlx2-induced neuronal transdifferentiation. In contrast, the neurogenic competence of Ink4a/Arf-deficient astroglia is both greatly increased and does not diminish through serial cell culture passage. Electrophysiological analysis further demonstrates the neuronal identity of cells induced from Ink4a/Arf-null astroglia, and short hairpin RNA-mediated acute knockdown of p16Ink4a and p19Arf p16Ink4a and p19Arf indicates that these gene products function postnatally as a barrier to cellular transdifferentiation. Finally, we found that mouse fibroblasts deficient for Ink4a/Arf also exhibit greatly enhanced transcription factor-induced neuronal induction. These data indicate that Ink4a/Arf is a potent barrier to direct neuronal transdifferentiation and further suggest that this locus functions normally in the progressive developmental restriction of postnatal astrocytes. PMID:25209293

  14. The human ARF tumor suppressor senses blastema activity and suppresses epimorphic tissue regeneration

    PubMed Central

    Hesse, Robert G; Kouklis, Gayle K; Ahituv, Nadav; Pomerantz, Jason H

    2015-01-01

    The control of proliferation and differentiation by tumor suppressor genes suggests that evolution of divergent tumor suppressor repertoires could influence species’ regenerative capacity. To directly test that premise, we humanized the zebrafish p53 pathway by introducing regulatory and coding sequences of the human tumor suppressor ARF into the zebrafish genome. ARF was dormant during development, in uninjured adult fins, and during wound healing, but was highly expressed in the blastema during epimorphic fin regeneration after amputation. Regenerative, but not developmental signals resulted in binding of zebrafish E2f to the human ARF promoter and activated conserved ARF-dependent Tp53 functions. The context-dependent activation of ARF did not affect growth and development but inhibited regeneration, an unexpected distinct tumor suppressor response to regenerative versus developmental environments. The antagonistic pleiotropic characteristics of ARF as both tumor and regeneration suppressor imply that inducing epimorphic regeneration clinically would require modulation of ARF –p53 axis activation. DOI: http://dx.doi.org/10.7554/eLife.07702.001 PMID:26575287

  15. An ARF6/Rab35 GTPase cascade for endocytic recycling and successful cytokinesis.

    PubMed

    Chesneau, Laurent; Dambournet, Daphné; Machicoane, Mickaël; Kouranti, Ilektra; Fukuda, Mitsunori; Goud, Bruno; Echard, Arnaud

    2012-01-24

    Cytokinesis bridge instability leads to binucleated cells that can promote tumorigenesis in vivo. Membrane trafficking is crucial for animal cell cytokinesis, and several endocytic pathways regulated by distinct GTPases (Rab11, Rab21, Rab35, ARF6, RalA/B) contribute to the postfurrowing steps of cytokinesis. However, little is known about how these pathways are coordinated for successful cytokinesis. The Rab35 GTPase controls a fast endocytic recycling pathway and must be activated for SEPTIN cytoskeleton localization at the intercellular bridge, and thus for completion of cytokinesis. Here, we report that the ARF6 GTPase negatively regulates Rab35 activation and hence the Rab35 pathway. Human cells expressing a constitutively activated, GTP-bound ARF6 mutant display identical endocytic recycling and cytokinesis defects as those observed upon overexpression of the inactivated, GDP-bound Rab35 mutant. As a molecular mechanism, we identified the Rab35 GAP EPI64B as an effector of ARF6 in negatively regulating Rab35 activation. Unexpectedly, this regulation takes place at clathrin-coated pits, and activated ARF6 reduces Rab35 loading into the endocytic pathway. Thus, an effector of an ARF protein is a GAP for a downstream Rab protein, and we propose that this hierarchical ARF/Rab GTPase cascade controls the proper activation of a common endocytic pathway essential for cytokinesis. PMID:22226746

  16. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  17. Defect tolerant transmission lithography mask

    DOEpatents

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  18. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  19. Miniature electron microscopes for lithography

    NASA Astrophysics Data System (ADS)

    Feinerman, Alan D.; Crewe, David A.; Perng, Dung-Ching; Spindt, Capp A.; Schwoebel, Paul R.; Crewe, Albert V.

    1994-05-01

    Two inexpensive and extremely accurate methods for fabricating miniature 10 - 50 kV and 0.5 - 10 kV electron beam columns have been developed: `slicing,' and `stacking.' Two or three miniature columns could be used to perform a 20 nm or better alignment of an x-ray mask to a substrate. An array of miniature columns could be used for rapid wafer inspection and high throughput electron beam lithography. The column fabrication methods combine the precision of semiconductor processing and fiber optic technologies to create macroscopic structures consisting of charged particle sources, deflecting and focusing electrodes, and detectors. The overall performance of the miniature column also depends on the emission characteristics of the micromachined electron source which is currently being investigated.

  20. Scaling behavior in interference lithography

    SciTech Connect

    Agayan, R.R.; Banyai, W.C.; Fernandez, A.

    1998-02-27

    Interference lithography is an emerging, technology that provides a means for achieving high resolution over large exposure areas (approximately 1 m{sup 2}) with virtually unlimited depth of field. One- and two-dimensional arrays of deep submicron structures can be created using near i-line wavelengths and standard resist processing. In this paper, we report on recent advances in the development of this technology, focusing, in particular, on how exposure latitude and resist profile scale with interference period We present structure width vs dose curves for periods ranging from 200 nm to 1 um, demonstrating that deep submicron structures can be generated with exposure latitudes exceeding 30%. Our experimental results are compared to simulations based on PROLITIV2.

  1. Genome-wide identification, isolation and expression analysis of auxin response factor (ARF) gene family in sweet orange (Citrus sinensis)

    PubMed Central

    Li, Si-Bei; OuYang, Wei-Zhi; Hou, Xiao-Jin; Xie, Liang-Liang; Hu, Chun-Gen; Zhang, Jin-Zhi

    2015-01-01

    Auxin response factors (ARFs) are an important family of proteins in auxin-mediated response, with key roles in various physiological and biochemical processes. To date, a genome-wide overview of the ARF gene family in citrus was not available. A systematic analysis of this gene family in citrus was begun by carrying out a genome-wide search for the homologs of ARFs. A total of 19 nonredundant ARF genes (CiARF) were found and validated from the sweet orange. A comprehensive overview of the CiARFs was undertaken, including the gene structures, phylogenetic analysis, chromosome locations, conserved motifs of proteins, and cis-elements in promoters of CiARF. Furthermore, expression profiling using real-time PCR revealed many CiARF genes, albeit with different patterns depending on types of tissues and/or developmental stages. Comprehensive expression analysis of these genes was also performed under two hormone treatments using real-time PCR. Indole-3-acetic acid (IAA) and N-1-napthylphthalamic acid (NPA) treatment experiments revealed differential up-regulation and down-regulation, respectively, of the 19 citrus ARF genes in the callus of sweet orange. Our comprehensive analysis of ARF genes further elucidates the roles of CiARF family members during citrus growth and development process. PMID:25870601

  2. French Immersion Program Evaluation Report.

    ERIC Educational Resources Information Center

    Nanaimo School District #68 (British Columbia).

    The Nanaimo (British Columbia) school district's French immersion program is evaluated. An introductory section gives background on the evaluation, outlines the evaluation process used, and offers brief comments on its outcome. The second section describes the immersion program's history and its current status in terms of enrollment, class size,…

  3. Proteobacterial ArfA peptides are synthesized from non-stop messenger RNAs.

    PubMed

    Schaub, Ryan E; Poole, Stephen J; Garza-Sánchez, Fernando; Benbow, Sarah; Hayes, Christopher S

    2012-08-24

    The translation of non-stop mRNA (which lack in-frame stop codons) represents a significant quality control problem for all organisms. In eubacteria, the transfer-messenger RNA (tmRNA) system facilitates recycling of stalled ribosomes from non-stop mRNA in a process termed trans-translation or ribosome rescue. During rescue, the nascent chain is tagged with the tmRNA-encoded ssrA peptide, which promotes polypeptide degradation after release from the stalled ribosome. Escherichia coli possesses an additional ribosome rescue pathway mediated by the ArfA peptide. The E. coli arfA message contains a hairpin structure that is cleaved by RNase III to produce a non-stop transcript. Therefore, ArfA levels are controlled by tmRNA through ssrA-peptide tagging and proteolysis. Here, we examine whether ArfA homologues from other bacteria are also regulated by RNase III and tmRNA. We searched 431 arfA coding sequences for mRNA secondary structures and found that 82.8% of the transcripts contain predicted hairpins in their 3'-coding regions. The arfA hairpins from Haemophilus influenzae, Proteus mirabilis, Vibrio fischeri, and Pasteurella multocida are all cleaved by RNase III as predicted, whereas the hairpin from Neisseria gonorrhoeae functions as an intrinsic transcription terminator to generate non-stop mRNA. Each ArfA homologue is ssrA-tagged and degraded when expressed in wild-type E. coli cells, but accumulates in mutants lacking tmRNA. Together, these findings show that ArfA synthesis from non-stop mRNA is a conserved mechanism to regulate the alternative ribosome rescue pathway. This strategy ensures that ArfA homologues are only deployed when the tmRNA system is incapacitated or overwhelmed by stalled ribosomes. PMID:22791716

  4. Interaction of serologically defined colon cancer antigen-3 with Arf6 and its predominant expression in the mouse testis.

    PubMed

    Sakagami, Hiroyuki; Hara, Yoshinobu; Fukaya, Masahiro

    2016-09-01

    ADP ribosylation factor 6 (Arf6) is a small GTPase that regulates endosomal trafficking and actin cytoskeleton remodeling. Here, we identified the serologically defined colon antigen-3 (SDCCAG3) as an Arf6-interacting protein by yeast two-hybrid screening with a constitutively active Arf6 mutant. SDCCAG3 interacts specifically with Arf6 among the Arf family members through its 101  C-terminal amino acids. SDCCAG3 is expressed most intensely in the testis at the mRNA and protein levels. In the testis, SDCCAG3 is expressed in spermatocytes and spermatids. We also show that full-length SDCCAG3, but not a mutant lacking the ability to interact with Arf6, is recruited to the midbody during cytokinesis when expressed exogenously in HeLa cells. These findings suggest that SDCCAG3 might function in endosomal trafficking downstream of Arf6. PMID:27373827

  5. Design, synthesis, and characterization of fluorine-free PAGs for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Liu, Sen; Glodde, Martin; Varanasi, Pushkara R.

    2010-04-01

    Photoacid generators (PAGs) are a key component in chemically amplified resists used in photolithography. Perfluorooctanesulfonates (PFOS) and other perfluoroalkylsulfonates (PFAS) have been well adopted as PAGs in 193 nm photoresist. Recently, concerns have been raised about their environmental impact due to their chemical persistency, bioaccumulation and toxicity. It is a general interest to find environmentally benign PAGs that are free of fluorine atoms. Here we describe the design, synthesis and characterization of a series of novel fluorine-free onium salts as PAGs for 193 nm photoresists. These PAGs demonstrated desirable physical and lithography properties when compared with PFAS-based PAGs for both dry and immersion exposures.

  6. Arf Induction by Tgfβ Is Influenced by Sp1 and C/ebpβ in Opposing Directions

    PubMed Central

    Zheng, Yanbin; Devitt, Caitlin; Liu, Jing; Iqbal, Nida; Skapek, Stephen X.

    2013-01-01

    Recent studies show that Arf, a bona fide tumor suppressor, also plays an essential role during mouse eye development. Tgfβ is required for Arf promoter activation in developing mouse eyes, and its capacity to induce Arf depends on Smads 2/3 as well as p38 Mapk. Substantial delay between activation of these pathways and increased Arf transcription imply that changes in the binding of additional transcription factors help orchestrate changes in Arf expression. Focusing on proteins with putative DNA binding elements near the mouse Arf transcription start, we now show that Tgfβ induction of this gene correlated with decreased expression and DNA binding of C/ebpβ to the proximal Arf promoter. Ectopic expression of C/ebpβ in mouse embryo fibroblasts (MEFs) blocked Arf induction by Tgfβ. Although basal levels of Arf mRNA were increased by C/ebpβ loss in MEFs and in the developing eye, Tgfβ was still able to increase Arf, indicating that derepression was not the sole factor. Chromatin immunoprecipitation (ChIP) assay showed increased Sp1 binding to the Arf promotor at 24 and 48 hours after Tgfβ treatment, at which time points Arf expression was significantly induced by Tgfβ. Chemical inhibition of Sp1 and its knockdown by RNA interference blocked Arf induction by Tgfβ in MEFs. In summary, our results indicate that C/ebpβ and Sp1 are negative and positive Arf regulators that are influenced by Tgfβ. PMID:23940569

  7. Immersion echelle spectrograph

    SciTech Connect

    Stevens, C.G.; Thomas, N.L.

    2000-06-20

    A small spectrograph is disclosed containing no moving components and capable of providing high resolution spectra of the mid-infrared region from 2 microns to 4 microns in wavelength. The resolving power of the spectrograph exceeds 20,000 throughout this region and at an optical throughput of about 10{sup {minus}5}cm{sup 2}sr. The spectrograph incorporates a silicon immersion echelle grating operating in high spectral order combined with a first order transmission grating in a cross-dispersing configuration to provide a two-dimensional (2-D) spectral format that is focused onto a two-dimensional infrared detector array. The spectrometer incorporates a common collimating and condensing lens assembly in a near aberration-free axially symmetric design. The spectrometer has wide use potential in addition to general research, such as monitoring atmospheric constituents for air quality, climate change, global warming, as well as monitoring exhaust fumes for smog sources or exhaust plumes for evidence of illicit drug manufacture.

  8. Thermal comfort following immersion.

    PubMed

    Guéritée, Julien; Redortier, Bernard; House, James R; Tipton, Michael J

    2015-02-01

    Unlike thermal comfort in air, little research has been undertaken exploring thermal comfort around water sports. We investigated the impact of swimming and cooling in air after swimming on thermal comfort. After 10 min of swimming-and-resting cycles in 28°C water, volunteers wearing two types of garments or in swim briefs, faced winds in 24°C air, at rest or when stepping. Thermal comfort was significantly higher during swimming than resting. Post-immersion, following maximum discomfort, in 45 of 65 tests thermal comfort improved although mean skin temperature was still cooling (0.26 [SD 0.19] °C·min(-1) - max was 0.89°C·min(-1)). When thermal comfort was re-established mean skin temperature was lower than at maximal discomfort in 39 of 54 tests (0.81 [SD 0.58] °C - max difference was 2.68°C). The reduction in thermal discomfort in this scenario could be due to the adaptation of thermoreceptors, or to reductions in cooling rates to levels where discomfort was less stimulated. The relief from the recent discomfort may explain why, later, thermal comfort returned to initial levels in spite of poorer thermal profiles. PMID:25485520

  9. Immersed interface methods. Final report

    SciTech Connect

    LeVeque, R.J.; Adams, L.M.; Bube, K.P.

    1996-11-01

    Cartesian grid methods encompass a wide variety of techniques used to solve partial differential equations in more than one space dimension on uniform Cartesian grids even when the underlying geometry is complex and not aligned with the grid. The authors` groups work on Immersed Interface Methods (IIM) was originally motivated by the desire to understand and improve the ``Immersed Boundary Method``, developed by Charles Peskin to solve incompressible Navier-Stokes equations in complicated geometries with moving elastic boundaries. This report briefly discusses the development of the Immersed Interface Methods and gives examples of application of the method in solving several partial differential equations.

  10. Magnetic nanostructures by colloidal lithography

    NASA Astrophysics Data System (ADS)

    Zhu, Frank Qing

    Structural, magnetic and in some cases magneto-transport properties of (1) symmetric and asymmetric ferromagnetic nanorings and (2) single layer, multilayer, and exchange biased ferromagnetic nanodots prepared by colloidal lithography are presented. A fast, reliable and cost effective method has been developed to fabricate large number (˜ 109) of magnetic nanorings over macroscopic areas (˜ cm2) with large areal densities (up to 45 rings/mum 2). Cobalt nanorings with diameters ranging from 100 nm to 500 nm have been fabricated by sputtering Co onto nanosphere-coated substrates followed by ion beam etching. X-ray diffraction verifies that the Co nanorings still have hexagonal close-packed (hcp) structure. Scanning electron microscopy reveals that the cross-section of the symmetric nanoring is tapered and uniform along the circumference, and the cross-section of the asymmetric nanoring changes progressively along the circumference. Two magnetic reversal processes have been found in magnetic nanorings---the vortex formation process and the onion rotation process. The co-existence of these two processes is the manifestation of the competition between the exchange energy and the magnetostatic energy in the nanorings. Micromagnetics simulations have been carried out to reveal the details of the magnetic reversals. The experimental and the computed hysteresis loops agree both qualitatively and quantitatively. For the 100 nm symmetric Co nanorings, the vortex formation process has a probability of about 40%, while the onion rotation process has 60% chances. To increase the probability of vortex formation process, a desirable process for application, asymmetric nanorings have been fabricated by ion beam etching at oblique angles. Unlike the symmetric nanorings, the probability of the vortex formation process in asymmetric nanorings can be controlled by the direction of the external field. For the 100 nm asymmetric nanorings, the fraction of the vortex formation process

  11. Radiative Processes In Air Excited By An ArF Laser

    NASA Technical Reports Server (NTRS)

    Mckenzie, Robert L.; Huo, Winifred; Laufer, Gabriel

    1990-01-01

    Report describes experimental and theoretical studies of emission spectrum of air excited by light from ArF laser. Purpose of studies to determine conditions under which fluorescence from O2 used to measure temperatures in aerodynamic flows.

  12. ARF6, PI3-kinase and host cell actin cytoskeleton in Toxoplasma gondii cell invasion

    SciTech Connect

    Vieira da Silva, Claudio; Alves da Silva, Erika; Costa Cruz, Mario; Chavrier, Philippe; Arruda Mortara, Renato

    2009-01-16

    Toxoplasma gondii infects a variety of different cell types in a range of different hosts. Host cell invasion by T. gondii occurs by active penetration of the host cell, a process previously described as independent of host actin polymerization. Also, the parasitophorous vacuole has been shown to resist fusion with endocytic and exocytic pathways of the host cell. ADP-ribosylation factor-6 (ARF6) belongs to the ARF family of small GTP-binding proteins. ARF6 regulates membrane trafficking and actin cytoskeleton rearrangements at the plasma membrane. Here, we have observed that ARF6 is recruited to the parasitophorous vacuole of tachyzoites of T. gondii RH strain and it also plays an important role in the parasite cell invasion with activation of PI3-kinase and recruitment of PIP{sub 2} and PIP{sub 3} to the parasitophorous vacuole of invading parasites. Moreover, it was verified that maintenance of host cell actin cytoskeleton integrity is important to parasite invasion.

  13. Building an immersion topcoat from the ground up: materials perspective

    NASA Astrophysics Data System (ADS)

    Khojasteh, Mahmoud; Popova, Irene; Varanasi, P. Rao; Sundberg, Linda; Robinson, C.; Corliss, D.; Lawson, Margaret; Dabbagh, G.; Slezak, M.; Colburn, Matthew; Petrillo, K.

    2007-03-01

    Over a period of last several years 193 nm immersion lithography from a remote and unlikely possibility gradually became a reality in many fabrication facilities across the globe and solid candidate for high volume manufacturing for the next generation technology node. It is being widely understood in the industry that top-coatless resist approach is a desirable final stage of the immersion process development. However creating low-defect high performance top-coatless resist materials requires understanding of the fundamental material properties of the top layer, responsible for leaching suppression, immersion fluid meniscus stability, and in this way enabling high speed low-defect scanning. While a lot of progress has been made in implementing specific top coat materials into the process flow, clear understanding effects of the top coat properties on the lithographic conditions and printing capability is still lacking. This paper will discuss top coat materials design, properties and functional characteristics in application to novel fluoroalcohol polymer-based immersion top coat. We have used our fluoroalcohol based-series designs (titled MVP top coat materials further on in the paper) as a test vehicle for establishing correlations between top coat performance and its physical and chemical properties including hydrophobicity, molecular weight/dispersity etc. Effects of polymer-solvent interactions on the contact angle and characteristics of the top coat material are explored, providing valuable understanding transferable to design of new generation top coats and top-coatless materials. Our resultant new designs demonstrated excellent lithographic performance, profiles and low leaching levels with commercially available resist and high receding contact angles, comparable to the commercial top coat materials.

  14. Acceleration of Gastric Tumorigenesis Through MKRN1-Mediated Posttranslational Regulation of p14ARF

    PubMed Central

    2012-01-01

    Background We investigated whether Makorin ring finger protein 1 (MKRN1), an E3 ligase, affects p14ARF-associated cellular senescence and tumorigenesis by posttranslational modification in gastric tumorigenesis. Methods A link between MKRN1 and ARF was examined in MKRN1 null mouse embryonic fibroblasts (MEFs) and in human fibroblasts and gastric cancer cells by silencing MKRN1 using small interfering RNA (siRNA) and short hairpin RNA (shRNA). Ubiquitination and proteasomal degradation assays were used to assess p14ARF degradation associated with MKRN1. MKRN1 and p14ARF expression levels were analyzed with immunohistochemistry in malignant and normal tissues from gastric cancer patients and with χ2 tests. The tumor growth of gastric cancer cells stably expressing MKRN1 shRNA, p14ARF shRNA, or both was examined in mouse xenograft models (n = 4–6) and analyzed with unpaired t tests. All statistical tests were two-sided. Results MKRN1 knockout MEFs exhibited premature senescence and growth retardation with increased p19ARF protein expression. Similar results were obtained for human fibroblasts or gastric cancer cell lines by MKRN1 knockdown. Biochemical analyses confirmed that MKRN1 targets p14ARF for ubiquitination and subsequent proteasome-dependent degradation. A statistically significant association was shown between MKRN1 overexpression and p14ARF underexpression (P = .016). Xenograft analyses using p53-functional AGS or -dysfunctional SNU601 cells displayed statistically significant tumor growth retardation by silencing MKRN1, which was reversed under depletion of p14ARF (AGS cells, MKRN1 knockdown tumors vs MKRN1 and p14ARF knockdown tumors: 164.6 vs 464.8mm3, difference = 300.2mm3, 95% CI = 189.1 to 411.3mm3, P < .001). Conclusions We demonstrated that MKRN1 functions as a novel E3 ligase of p14ARF and that it potentially regulates cellular senescence and tumorigenesis in gastric cancer. PMID:23104211

  15. Auxin Response Factor SlARF2 Is an Essential Component of the Regulatory Mechanism Controlling Fruit Ripening in Tomato.

    PubMed

    Hao, Yanwei; Hu, Guojian; Breitel, Dario; Liu, Mingchun; Mila, Isabelle; Frasse, Pierre; Fu, Yongyao; Aharoni, Asaph; Bouzayen, Mondher; Zouine, Mohamed

    2015-12-01

    Ethylene is the main regulator of climacteric fruit ripening, by contrast the putative role of other phytohormones in this process remains poorly understood. The present study brings auxin signaling components into the mechanism regulating tomato fruit ripening through the functional characterization of Auxin Response Factor2 (SlARF2) which encodes a downstream component of auxin signaling. Two paralogs, SlARF2A and SlARF2B, are found in the tomato genome, both displaying a marked ripening-associated expression but distinct responsiveness to ethylene and auxin. Down-regulation of either SlARF2A or SlARF2B resulted in ripening defects while simultaneous silencing of both genes led to severe ripening inhibition suggesting a functional redundancy among the two ARFs. Tomato fruits under-expressing SlARF2 produced less climacteric ethylene and exhibited a dramatic down-regulation of the key ripening regulators RIN, CNR, NOR and TAGL1. Ethylene treatment failed to reverse the non-ripening phenotype and the expression of ethylene signaling and biosynthesis genes was strongly altered in SlARF2 down-regulated fruits. Although both SlARF proteins are transcriptional repressors the data indicate they work as positive regulators of tomato fruit ripening. Altogether, the study defines SlARF2 as a new component of the regulatory network controlling the ripening process in tomato. PMID:26716451

  16. The yeast Arf GTPase-activating protein Age1 is regulated by phospholipase D for post-Golgi vesicular transport.

    PubMed

    Benjamin, Jeremy J R; Poon, Pak P; Lewis, Stephen M; Auger, Andréanne; Wong, Tania A; Singer, Richard A; Johnston, Gerald C

    2011-02-18

    Vesicular transport shuttles cargo among intracellular compartments. Several stages of vesicular transport are mediated by the small GTPase Arf, which is controlled in a cycle of GTP binding and hydrolysis by Arf guanine-nucleotide exchange factors and Arf GTPase-activating proteins (ArfGAPs), respectively. In budding yeast the Age2 + Gcs1 ArfGAP pair facilitates post-Golgi transport. We have found the AGE1 gene, encoding another ArfGAP, can in high gene-copy number alleviate the temperature sensitivity of cells carrying mutations affecting the Age2 + Gcs1 ArfGAP pair. Moreover, increased AGE1 gene dosage compensates for the complete absence of the otherwise essential Age2 + Gcs1 ArfGAP pair. Increased dosage of SFH2, encoding a phosphatidylinositol transfer protein, also allows cell growth in the absence of the Age2 + Gcs1 pair, but good growth in this situation requires Age1. The ability of Age1 to overcome the need for Age2 + Gcs1 depends on phospholipase D activity that regulates lipid composition. We show by direct assessment of Age1 ArfGAP activity that Age1 is regulated by lipid composition and can provide ArfGAP function for post-Golgi transport. PMID:21135091

  17. The Yeast Arf GTPase-activating Protein Age1 Is Regulated by Phospholipase D for Post-Golgi Vesicular Transport*

    PubMed Central

    Benjamin, Jeremy J. R.; Poon, Pak P.; Lewis, Stephen M.; Auger, Andréanne; Wong, Tania A.; Singer, Richard A.; Johnston, Gerald C.

    2011-01-01

    Vesicular transport shuttles cargo among intracellular compartments. Several stages of vesicular transport are mediated by the small GTPase Arf, which is controlled in a cycle of GTP binding and hydrolysis by Arf guanine-nucleotide exchange factors and Arf GTPase-activating proteins (ArfGAPs), respectively. In budding yeast the Age2 + Gcs1 ArfGAP pair facilitates post-Golgi transport. We have found the AGE1 gene, encoding another ArfGAP, can in high gene-copy number alleviate the temperature sensitivity of cells carrying mutations affecting the Age2 + Gcs1 ArfGAP pair. Moreover, increased AGE1 gene dosage compensates for the complete absence of the otherwise essential Age2 + Gcs1 ArfGAP pair. Increased dosage of SFH2, encoding a phosphatidylinositol transfer protein, also allows cell growth in the absence of the Age2 + Gcs1 pair, but good growth in this situation requires Age1. The ability of Age1 to overcome the need for Age2 + Gcs1 depends on phospholipase D activity that regulates lipid composition. We show by direct assessment of Age1 ArfGAP activity that Age1 is regulated by lipid composition and can provide ArfGAP function for post-Golgi transport. PMID:21135091

  18. Auxin Response Factor SlARF2 Is an Essential Component of the Regulatory Mechanism Controlling Fruit Ripening in Tomato

    PubMed Central

    Hao, Yanwei; Hu, Guojian; Breitel, Dario; Liu, Mingchun; Mila, Isabelle; Frasse, Pierre; Fu, Yongyao; Aharoni, Asaph; Bouzayen, Mondher; Zouine, Mohamed

    2015-01-01

    Ethylene is the main regulator of climacteric fruit ripening, by contrast the putative role of other phytohormones in this process remains poorly understood. The present study brings auxin signaling components into the mechanism regulating tomato fruit ripening through the functional characterization of Auxin Response Factor2 (SlARF2) which encodes a downstream component of auxin signaling. Two paralogs, SlARF2A and SlARF2B, are found in the tomato genome, both displaying a marked ripening-associated expression but distinct responsiveness to ethylene and auxin. Down-regulation of either SlARF2A or SlARF2B resulted in ripening defects while simultaneous silencing of both genes led to severe ripening inhibition suggesting a functional redundancy among the two ARFs. Tomato fruits under-expressing SlARF2 produced less climacteric ethylene and exhibited a dramatic down-regulation of the key ripening regulators RIN, CNR, NOR and TAGL1. Ethylene treatment failed to reverse the non-ripening phenotype and the expression of ethylene signaling and biosynthesis genes was strongly altered in SlARF2 down-regulated fruits. Although both SlARF proteins are transcriptional repressors the data indicate they work as positive regulators of tomato fruit ripening. Altogether, the study defines SlARF2 as a new component of the regulatory network controlling the ripening process in tomato. PMID:26716451

  19. Nucleolar p14ARF Overexpression in Reed-Sternberg Cells in Hodgkin’s Lymphoma

    PubMed Central

    García, Juan F.; Villuendas, Raquel; Sánchez-Beato, Margarita; Sánchez-Aguilera, Abel; Sánchez, Lydia; Prieto, Ignacio; Piris, Miguel A.

    2002-01-01

    The development of human cancers is frequently associated with the silencing of the two major tumor suppressor pathways represented by retinoblastoma protein and p53. As the incidence of p53 mutations is significantly lower in Hodgkin’s lymphoma than in other neoplasias, we investigated whether the malfunction of other proteins in this pathway could be responsible for its inactivation. Because the existence of nucleolar complexes between p14ARF and Hdm2 has been described as having a critical effect on p53 function by inhibiting its degradation, we analyzed the expression and subcellular localization of these proteins in 52 cases and in Hodgkin’s cell lines. Two of four cell lines revealed loss of p14ARF expression secondary to gene promoter methylation, this being mutually exclusive with p53 mutations (1 of 4), illustrating the existence of selective pressure to inactivate the p53 pathway. The majority of Hodgkin’s samples showed a strong nucleolar expression of p14ARF that was not associated with Hdm2. They also showed the existence of Hdm2/p53 complexes, and the absence of complexes containing either p14ARF/Hdm2 or p14ARF/p53. The different localization of Hdm2 (nucleoplasm) and p14ARF (nucleoli) observed in Hodgkin’s tumors and cell lines is associated with the presence of short alternatively spliced transcripts of Hdm2 lacking the ARF-binding region and the nuclear export signal. The absence of these p14ARF/Hdm2 nucleolar complexes could be sufficient to inactivate the pathway and may explain the low frequency of p53 mutations in this tumor. PMID:11839577

  20. Arf6 controls platelet spreading and clot retraction via integrin αIIbβ3 trafficking

    PubMed Central

    Huang, Yunjie; Joshi, Smita; Xiang, Binggang; Kanaho, Yasunori; Li, Zhenyu; Bouchard, Beth A.; Moncman, Carole L.

    2016-01-01

    Platelet and megakaryocyte endocytosis is important for loading certain granule cargo (ie, fibrinogen [Fg] and vascular endothelial growth factor); however, the mechanisms of platelet endocytosis and its functional acute effects are understudied. Adenosine 5'-diphosphate–ribosylation factor 6 (Arf6) is a small guanosine triphosphate–binding protein that regulates endocytic trafficking, especially of integrins. To study platelet endocytosis, we generated platelet-specific Arf6 knockout (KO) mice. Arf6 KO platelets had less associated Fg suggesting that Arf6 affects αIIbβ3-mediated Fg uptake and/or storage. Other cargo was unaffected. To measure Fg uptake, mice were injected with biotinylated- or fluorescein isothiocyanate (FITC)–labeled Fg. Platelets from the injected Arf6 KO mice showed lower accumulation of tagged Fg, suggesting an uptake defect. Ex vivo, Arf6 KO platelets were also defective in FITC-Fg uptake and storage. Immunofluorescence analysis showed initial trafficking of FITC-Fg to a Rab4-positive compartment followed by colocalization with Rab11-positive structures, suggesting that platelets contain and use both early and recycling endosomes. Resting and activated αIIbβ3 levels, as measured by flow cytometry, were unchanged; yet, Arf6 KO platelets exhibited enhanced spreading on Fg and faster clot retraction. This was not the result of alterations in αIIbβ3 signaling, because myosin light-chain phosphorylation and Rac1/RhoA activation were unaffected. Consistent with the enhanced clot retraction and spreading, Arf6 KO mice showed no deficits in tail bleeding or FeCl3-induced carotid injury assays. Our studies present the first mouse model for defining the functions of platelet endocytosis and suggest that altered integrin trafficking may affect the efficacy of platelet function. PMID:26738539

  1. Nanometer x-ray lithography

    NASA Astrophysics Data System (ADS)

    Hartley, Frank T.; Khan Malek, Chantal G.

    1999-10-01

    New developments for x-ray nanomachining include pattern transfer onto non-planar surfaces coated with electrodeposited resists using synchrotron radiation x-rays through extremely high-resolution mask made by chemically assisted focused ion beam lithography. Standard UV photolithographic processes cannot maintain sub-micron definitions over large variation in feature topography. The ability of x-ray printing to pattern thin or thick layers of photoresist with high resolution on non-planar surfaces of large and complex topographies with limited diffraction and scattering effects and no substrate reflection is known and can be exploited for patterning microsystems with non-planar 3D geometries as well as multisided and multilayered substrates. Thin conformal coatings of electro-deposited positive and negative tone photoresist have been shown to be x-ray sensitive and accommodate sub-micro pattern transfer over surface of extreme topographical variations. Chemically assisted focused ion beam selective anisotropic erosion was used to fabricate x-ray masks directly. Masks with feature sizes less than 20 nm through 7 microns of gold were made on bulk silicon substrates and x-ray mask membranes. The technique is also applicable to other high density materials. Such masks enable the primary and secondary patterning and/or 3D machining of Nano-Electro-Mechanical Systems over large depths or complex relief and the patterning of large surface areas with sub-optically dimensioned features.

  2. Secondary Electrons in EUV Lithography

    SciTech Connect

    Torok, Justin; Re, Ryan Del; Herbol, Henry; Das, Sanjana; Bocharova, Irina; Paolucci, Angela; Ocola, Leonidas E.; Ventrice Jr., Carl; Lifshin, Eric; Denbeaux, Greg; Brainard, Robert L.

    2013-01-01

    Secondary electrons play critical roles in several imaging technologies, including extreme ultraviolet (EUV) lithography. At longer wavelengths of light (e.g. 193 and 248 nm), the photons are directly involved in the photochemistry occurring during photolysis. EUV light (13.5 nm, 92 eV), however, first creates a photoelectron, and this electron, or its subsequent daughter electrons create most of the chemical changes that occur during exposure. Despite the importance of these electrons, the details surrounding the chemical events leading to acid production remain poorly understood. Previously reported experimental results using high PAG-loaded resists have demonstrated that up to five or six photoacids can be generated per incident photon. Until recently, only electron recombination events were thought to play a role in acid generation, requiring that at least as many secondary electrons are produced to yield a given number of acid molecules. However, the initial results we have obtained using a Monte Carlo-based modeling program, LESiS, demonstrate that only two to three secondary electrons are made per absorbed EUV photon. A more comprehensive understanding of EUV-induced acid generation is therefore needed for the development of higher performance resists

  3. Masks for extreme ultraviolet lithography

    SciTech Connect

    Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y

    1998-09-01

    In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed.

  4. Semiconductor foundry, lithography, and partners

    NASA Astrophysics Data System (ADS)

    Lin, Burn J.

    2002-07-01

    The semiconductor foundry took off in 1990 with an annual capacity of less than 0.1M 8-inch-equivalent wafers at the 2-mm node. In 2000, the annual capacity rose to more than 10M. Initially, the technology practiced at foundries was 1 to 2 generations behind that at integrated device manufacturers (IDMs). Presently, the progress in 0.13-mm manufacturing goes hand-in-hand with any of the IDMs. There is a two-order of magnitude rise in output and the progress of technology development outpaces IDMs. What are the reasons of the success? Is it possible to sustain the pace? This paper shows the quick rise of foundries in capacity, sales, and market share. It discusses the their uniqueness which gives rise to advantages in conjunction with challenges. It also shows the role foundries take with their customer partners and supplier partners, their mutual dependencies, as well as expectations. What role then does lithography play in the foundries? What are the lithographic challenges to sustain the pace of technology? The experience of technology development and transfer, at one of the major foundries, is used to illustrate the difficulties and progresses made. Looking into the future, as semiconductor manufacturing will become even more expensive and capital investment more prohibitive, we will make an attempt to suggest possible solutions.

  5. Extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Sweeney, Donald W.; Shafer, David; McGuire, James

    2001-01-01

    Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

  6. Overexpression of AtTTP Affects ARF17 Expression and Leads to Male Sterility in Arabidopsis

    PubMed Central

    Shi, Zhi-Hao; Zhang, Cheng; Xu, Xiao-Feng; Zhu, Jun; Zhou, Que; Ma, Li-Juan; Niu, Jin; Yang, Zhong-Nan

    2015-01-01

    Callose synthesis is critical for the formation of the pollen wall pattern. CalS5 is thought to be the major synthethase for the callose wall. In the Arabidopsis anther, ARF17 regulates the expression of CalS5 and is the target of miR160. Plants expressing miR160-resistant ARF17 (35S:5mARF17 lines) with increased ARF17 mRNA levels display male sterility. Here we report a zinc finger family gene, AtTTP, which is involved in miR160 maturation and callose synthesis in Arabidopsis. AtTTP is expressed in microsporocytes, tetrads and tapetal cells in the anther. Over-expression lines of AtTTP (AtTTP-OE line) exhibited reduced male fertility. CalS5 expression was tremendously reduced and the tetrad callose wall became much thinner in the AtTTP-OE line. Northern blotting hybridization and quantitative RT-PCR analysis revealed that miR160 was decreased, while the expression of ARF17 was increased in the AtTTP-OE line. Based on these results, we propose that AtTTP associates with miR160 in order to regulate the ARF17 expression needed for callose synthesis and pollen wall formation. PMID:25822980

  7. P53- and mevalonate pathway-driven malignancies require Arf6 for metastasis and drug resistance.

    PubMed

    Hashimoto, Ari; Oikawa, Tsukasa; Hashimoto, Shigeru; Sugino, Hirokazu; Yoshikawa, Ayumu; Otsuka, Yutaro; Handa, Haruka; Onodera, Yasuhito; Nam, Jin-Min; Oneyama, Chitose; Okada, Masato; Fukuda, Mitsunori; Sabe, Hisataka

    2016-04-11

    Drug resistance, metastasis, and a mesenchymal transcriptional program are central features of aggressive breast tumors. The GTPase Arf6, often overexpressed in tumors, is critical to promote epithelial-mesenchymal transition and invasiveness. The metabolic mevalonate pathway (MVP) is associated with tumor invasiveness and known to prenylate proteins, but which prenylated proteins are critical for MVP-driven cancers is unknown. We show here that MVP requires the Arf6-dependent mesenchymal program. The MVP enzyme geranylgeranyl transferase II (GGT-II) and its substrate Rab11b are critical for Arf6 trafficking to the plasma membrane, where it is activated by receptor tyrosine kinases. Consistently, mutant p53, which is known to support tumorigenesis via MVP, promotes Arf6 activation via GGT-II and Rab11b. Inhibition of MVP and GGT-II blocked invasion and metastasis and reduced cancer cell resistance against chemotherapy agents, but only in cells overexpressing Arf6 and components of the mesenchymal program. Overexpression of Arf6 and mesenchymal proteins as well as enhanced MVP activity correlated with poor patient survival. These results provide insights into the molecular basis of MVP-driven malignancy. PMID:27044891

  8. Liver Sinusoidal Endothelial Cells Escape Senescence by Loss of p19ARF

    PubMed Central

    Koudelkova, Petra; Weber, Gerhard; Mikulits, Wolfgang

    2015-01-01

    Liver sinusoidal endothelial cells (LSECs) represent a highly differentiated cell type that lines hepatic sinusoids. LSECs form a discontinuous endothelium due to fenestrations under physiological conditions, which are reduced upon chronic liver injury. Cultivation of rodent LSECs associates with a rapid onset of stress-induced senescence a few days post isolation, which limits genetic and biochemical studies ex vivo. Here we show the establishment of LSECs isolated from p19ARF-/- mice which undergo more than 50 cell doublings in the absence of senescence. Isolated p19ARF-/- LSECs display a cobblestone-like morphology and show the ability of tube formation. Analysis of DNA content revealed a stable diploid phenotype after long-term passaging without a gain of aneuploidy. Notably, p19ARF-/- LSECs express the endothelial markers CD31, vascular endothelial growth factor receptor (VEGFR)-2, VE-cadherin, von Willebrand factor, stabilin-2 and CD146 suggesting that these cells harbor and maintain an endothelial phenotype. In line, treatment with small molecule inhibitors against VEGFR-2 caused cell death, demonstrating the sustained ability of p19ARF-/- LSECs to respond to anti-angiogenic therapeutics. From these data we conclude that loss of p19ARF overcomes senescence of LSECs, allowing immortalization of cells without losing endothelial characteristics. Thus, p19ARF-/- LSECs provide a novel cellular model to study endothelial cell biology. PMID:26528722

  9. Constitutive auxin response in Physcomitrella reveals complex interactions between Aux/IAA and ARF proteins

    PubMed Central

    Lavy, Meirav; Prigge, Michael J; Tao, Sibo; Shain, Stephanie; Kuo, April; Kirchsteiger, Kerstin; Estelle, Mark

    2016-01-01

    The coordinated action of the auxin-sensitive Aux/IAA transcriptional repressors and ARF transcription factors produces complex gene-regulatory networks in plants. Despite their importance, our knowledge of these two protein families is largely based on analysis of stabilized forms of the Aux/IAAs, and studies of a subgroup of ARFs that function as transcriptional activators. To understand how auxin regulates gene expression we generated a Physcomitrella patens line that completely lacks Aux/IAAs. Loss of the repressors causes massive changes in transcription with misregulation of over a third of the annotated genes. Further, we find that the aux/iaa mutant is blind to auxin indicating that auxin regulation of transcription occurs exclusively through Aux/IAA function. We used the aux/iaa mutant as a simplified platform for studies of ARF function and demonstrate that repressing ARFs regulate auxin-induced genes and fine-tune their expression. Further the repressing ARFs coordinate gene induction jointly with activating ARFs and the Aux/IAAs. DOI: http://dx.doi.org/10.7554/eLife.13325.001 PMID:27247276

  10. Constitutive auxin response in Physcomitrella reveals complex interactions between Aux/IAA and ARF proteins.

    PubMed

    Lavy, Meirav; Prigge, Michael J; Tao, Sibo; Shain, Stephanie; Kuo, April; Kirchsteiger, Kerstin; Estelle, Mark

    2016-01-01

    The coordinated action of the auxin-sensitive Aux/IAA transcriptional repressors and ARF transcription factors produces complex gene-regulatory networks in plants. Despite their importance, our knowledge of these two protein families is largely based on analysis of stabilized forms of the Aux/IAAs, and studies of a subgroup of ARFs that function as transcriptional activators. To understand how auxin regulates gene expression we generated a Physcomitrella patens line that completely lacks Aux/IAAs. Loss of the repressors causes massive changes in transcription with misregulation of over a third of the annotated genes. Further, we find that the aux/iaa mutant is blind to auxin indicating that auxin regulation of transcription occurs exclusively through Aux/IAA function. We used the aux/iaa mutant as a simplified platform for studies of ARF function and demonstrate that repressing ARFs regulate auxin-induced genes and fine-tune their expression. Further the repressing ARFs coordinate gene induction jointly with activating ARFs and the Aux/IAAs. PMID:27247276

  11. Absence of p16INK4a and truncation of ARF tumor suppressors in chickens

    PubMed Central

    Kim, Soo-Hyun; Mitchell, Michael; Fujii, Hideta; Llanos, Susana; Peters, Gordon

    2003-01-01

    The INK4b-ARF-INK4a locus on human chromosome 9p21 (Human Genome Organization designation CDKN2B-CDKN2A), and the corresponding locus on mouse chromosome 4, encodes three distinct products: two members of the INK4 cyclin-dependent kinase inhibitor family and a completely unrelated protein, ARF, whose carboxyl-terminal half is specified by the second exon of INK4a but in an alternative reading frame. As INK4 proteins block the phosphorylation of the retinoblastoma gene product and ARF protects p53 from degradation, the locus plays a key role in tumor suppression and the control of cell proliferation. To gain further insights into the relative importance of INK4a and ARF in different settings, we have isolated and characterized the equivalent locus in chickens. Surprisingly, although we identified orthologues of INK4b and ARF, chickens do not encode an equivalent of INK4a. Moreover, the reading frame for chicken ARF does not extend into exon 2, because splicing occurs in a different register to that used in mammals. The resultant 60-aa product nevertheless shares functional attributes with its mammalian counterparts. As well as indicating that the locus has been subject to dynamic evolutionary pressures, these unexpected findings suggest that in chickens, the tumor-suppressor functions of INK4a have been compensated for by other genes. PMID:12506196

  12. ELMOD2 is an Arl2 GTPase-activating protein that also acts on Arfs.

    PubMed

    Bowzard, J Bradford; Cheng, Dongmei; Peng, Junmin; Kahn, Richard A

    2007-06-15

    Regulatory GTPases in the Ras superfamily employ a cycle of alternating GTP binding and hydrolysis, controlled by guanine nucleotide exchange factors and GTPase-activating proteins (GAPs), as essential features of their actions in cells. Studies of these GAPs and guanine nucleotide exchange factors have provided important insights into our understanding of GTPase signaling and biology. Within the Ras superfamily, the Arf family is composed of 30 members in mammals, including 22 Arf-like (Arl) proteins. Much less is known about the mechanisms of cell regulation by Arls than by Arfs. We report the purification from bovine testis of an Arl2 GAP and its identity as ELMOD2, a protein with no previously described function. ELMOD2 is one of six human proteins that contain an ELMO domain, and a second member, ELMOD1, was also found to have Arl2 GAP activity. Surprisingly, ELMOD2 also exhibited GAP activity against Arf proteins even though it does not contain the canonical Arf GAP sequence signature. The broader specificity of ELMOD2, as well as the previously described role for ELMO1 and ELMO2 in linking Arf6 and Rac1 signaling, suggests that ELMO family members may play a more general role in integrating signaling pathways controlled by Arls and other GTPases. PMID:17452337

  13. Expression of p14ARF, MDM2, and MDM4 in human retinoblastoma.

    PubMed

    Guo, Ying; Pajovic, Sanja; Gallie, Brenda L

    2008-10-10

    It is still not clear whether the p53 pathway is altered in retinoblastoma development. We assessed the expression of the p53 pathway genes p14(ARF), mouse double minute 2 (MDM2), and mouse double minute 4 (MDM4) in human retinoblastoma compared to normal retina. Primary human retinoblastomas, retinoblastoma cell lines and normal retinas were assessed for p14(ARF) and MDM4 mRNA by quantitative RT-PCR. p14(ARF), MDM2, and MDM4 protein were measured by immunoblot and immunohistochemistry. Compared to retina, p14(ARF) mRNA expression was notably increased in retinoblastoma but p14(ARF) protein was undetectable. MDM2 and MDM4 proteins were expressed in 22/22 retinoblastomas. MDM2 was expressed in 3/10 retinas tested, and MDM4 in 10/10 retinas. The expression level of MDM2 protein in retinoblastomas and retina was comparable, while MDM4 protein was overexpressed in one retinoblastoma cell line Y79 and two primary retinoblastomas. We observe that overexpression of MDM2 and MDM4 is not a necessary step in retinoblastoma development. However, loss of detectable p14(ARF) protein and resultant lack of functional inactivation of these p53 inhibitors may contribute to retinoblastoma development by constitutive inhibition of p53. PMID:18644346

  14. ARF6-dependent regulation of P2Y receptor traffic and function in human platelets.

    PubMed

    Kanamarlapudi, Venkateswarlu; Owens, Sian E; Saha, Keya; Pope, Robert J; Mundell, Stuart J

    2012-01-01

    Adenosine diphosphate (ADP) is a critical regulator of platelet activation, mediating its actions through two G protein-coupled receptors, the P2Y(1) and P2Y(12) purinoceptors. Recently, we demonstrated that P2Y(1) and P2Y(12) purinoceptor activities are rapidly and reversibly modulated in human platelets, revealing that the underlying mechanism requires receptor internalization and subsequent trafficking as an essential part of this process. In this study we investigated the role of the small GTP-binding protein ADP ribosylation factor 6 (ARF6) in the internalization and function of P2Y(1) and P2Y(12) purinoceptors in human platelets. ARF6 has been implicated in the internalization of a number of GPCRs, although its precise molecular mechanism in this process remains unclear. In this study we show that activation of either P2Y(1) or P2Y(12) purinoceptors can stimulate ARF6 activity. Further blockade of ARF6 function either in cell lines or human platelets blocks P2Y purinoceptor internalization. This blockade of receptor internalization attenuates receptor resensitization. Furthermore, we demonstrate that Nm23-H1, a nucleoside diphosphate (NDP) kinase regulated by ARF6 which facilitates dynamin-dependent fission of coated vesicles during endocytosis, is also required for P2Y purinoceptor internalization. These data describe a novel function of ARF6 in the internalization of P2Y purinoceptors and demonstrate the integral importance of this small GTPase upon platelet ADP receptor function. PMID:22916275

  15. ARF6-Dependent Regulation of P2Y Receptor Traffic and Function in Human Platelets

    PubMed Central

    Kanamarlapudi, Venkateswarlu; Owens, Sian E.; Saha, Keya; Pope, Robert J.; Mundell, Stuart J.

    2012-01-01

    Adenosine diphosphate (ADP) is a critical regulator of platelet activation, mediating its actions through two G protein-coupled receptors, the P2Y1 and P2Y12 purinoceptors. Recently, we demonstrated that P2Y1 and P2Y12 purinoceptor activities are rapidly and reversibly modulated in human platelets, revealing that the underlying mechanism requires receptor internalization and subsequent trafficking as an essential part of this process. In this study we investigated the role of the small GTP-binding protein ADP ribosylation factor 6 (ARF6) in the internalization and function of P2Y1 and P2Y12 purinoceptors in human platelets. ARF6 has been implicated in the internalization of a number of GPCRs, although its precise molecular mechanism in this process remains unclear. In this study we show that activation of either P2Y1 or P2Y12 purinoceptors can stimulate ARF6 activity. Further blockade of ARF6 function either in cell lines or human platelets blocks P2Y purinoceptor internalization. This blockade of receptor internalization attenuates receptor resensitization. Furthermore, we demonstrate that Nm23-H1, a nucleoside diphosphate (NDP) kinase regulated by ARF6 which facilitates dynamin-dependent fission of coated vesicles during endocytosis, is also required for P2Y purinoceptor internalization. These data describe a novel function of ARF6 in the internalization of P2Y purinoceptors and demonstrate the integral importance of this small GTPase upon platelet ADP receptor function. PMID:22916275

  16. In die mask overlay control for 14nm double-patterning lithography

    NASA Astrophysics Data System (ADS)

    Chou, William; Cheng, James; Tseng, Alex C. P.; Wu, J. K.; Chang, Chin Kuei; Cheng, Jeffrey; Lee, Adder; Huang, Chain Ting; Peng, N. T.; Hsu, Simon C. C.; Yu, Chun Chi; Lu, Colbert; Yu, Julia; Craig, Peter; Pollock, Chuck; Ham, Young; McMurran, Jeff

    2015-10-01

    According to the ITRS roadmap, semiconductor industry drives the 193nm lithography to its limits, using techniques like Double Pattern Technology (DPT), Source Mask Optimization (SMO) and Inverse Lithography Technology (ILT). In terms of considering the photomask metrology, full in-die measurement capability is required for registration and overlay control with challenging specifications for repeatability and accuracy. Double patterning using 193nm immersion lithography has been adapted as the solution to enable 14nm technology nodes. The overlay control is one of the key figures for the successful realization of this technology. In addition to the various error contributions from the wafer scanner, the reticles play an important role in terms of considering lithographic process contributed errors. Accurate pattern placement of the features on reticles with a registration error below 4nm is mandatory to keep overall photomask contributions to overlay of sub 20nm logic within the allowed error budget. In this paper, we show in-die registration errors using 14nm DPT product masks, by measuring in-die overlay patterns comparing with regular registration patterns. The mask measurements are used to obtain an accurate model to predict mask contribution on wafer overlay of double patterning technology.

  17. Lithography aware overlay metrology target design method

    NASA Astrophysics Data System (ADS)

    Lee, Myungjun; Smith, Mark D.; Lee, Joonseuk; Jung, Mirim; Lee, Honggoo; Kim, Youngsik; Han, Sangjun; Adel, Michael E.; Lee, Kangsan; Lee, Dohwa; Choi, Dongsub; Liu, Zephyr; Itzkovich, Tal; Levinski, Vladimir; Levy, Ady

    2016-03-01

    We present a metrology target design (MTD) framework based on co-optimizing lithography and metrology performance. The overlay metrology performance is strongly related to the target design and optimizing the target under different process variations in a high NA optical lithography tool and measurement conditions in a metrology tool becomes critical for sub-20nm nodes. The lithography performance can be quantified by device matching and printability metrics, while accuracy and precision metrics are used to quantify the metrology performance. Based on using these metrics, we demonstrate how the optimized target can improve target printability while maintaining the good metrology performance for rotated dipole illumination used for printing a sub-100nm diagonal feature in a memory active layer. The remaining challenges and the existing tradeoff between metrology and lithography performance are explored with the metrology target designer's perspective. The proposed target design framework is completely general and can be used to optimize targets for different lithography conditions. The results from our analysis are both physically sensible and in good agreement with experimental results.

  18. Soft Lithography Using Nectar Droplets.

    PubMed

    Biswas, Saheli; Chakrabarti, Aditi; Chateauminois, Antoine; Wandersman, Elie; Prevost, Alexis M; Chaudhury, Manoj K

    2015-12-01

    In spite of significant advances in replication technologies, methods to produce well-defined three-dimensional structures are still at its infancy. Such a limitation would be evident if we were to produce a large array of simple and, especially, compound convex lenses, also guaranteeing that their surfaces would be molecularly smooth. Here, we report a novel method to produce such structures by cloning the 3D shape of nectar drops, found widely in nature, using conventional soft lithography.The elementary process involves transfer of a thin patch of the sugar solution coated on a glass slide onto a hydrophobic substrate on which this patch evolves into a microdroplet. Upon the absorption of water vapor, such a microdroplet grows linearly with time, and its final size can be controlled by varying its exposure time to water vapor. At any stage of the evolution of the size of the drop, its shape can be cloned onto a soft elastomer by following the well-known methods of molding and cross-linking the same. A unique new science that emerges in our attempt to understand the transfer of the sugar patch and its evolution to a spherical drop is the elucidation of the mechanics underlying the contact of a deformable sphere against a solid support intervening a thin liquid film. A unique aspect of this work is to demonstrate that higher level structures can also be generated by transferring even smaller nucleation sites on the surface of the primary lenses and then allowing them to grow by absorption of water vapor. What results at the end is either a well-controlled distribution of smooth hemispherical lenses or compound structures that could have potential applications in the fundamental studies of contact mechanics, wettability, and even in optics. PMID:26563988

  19. ACAP3 regulates neurite outgrowth through its GAP activity specific to Arf6 in mouse hippocampal neurons.

    PubMed

    Miura, Yuki; Hongu, Tsunaki; Yamauchi, Yohei; Funakoshi, Yuji; Katagiri, Naohiro; Ohbayashi, Norihiko; Kanaho, Yasunori

    2016-09-01

    ACAP3 (ArfGAP with coiled-coil, ankyrin repeat and pleckstrin homology domains 3) belongs to the ACAP family of GAPs (GTPase-activating proteins) for the small GTPase Arf (ADP-ribosylation factor). However, its specificity to Arf isoforms and physiological functions remain unclear. In the present study, we demonstrate that ACAP3 plays an important role in neurite outgrowth of mouse hippocampal neurons through its GAP activity specific to Arf6. In primary cultured mouse hippocampal neurons, knockdown of ACAP3 abrogated neurite outgrowth, which was rescued by ectopically expressed wild-type ACAP3, but not by its GAP activity-deficient mutant. Ectopically expressed ACAP3 in HEK (human embryonic kidney)-293T cells showed the GAP activity specific to Arf6. In support of this observation, the level of GTP-bound Arf6 was significantly increased by knockdown of ACAP3 in hippocampal neurons. In addition, knockdown and knockout of Arf6 in mouse hippocampal neurons suppressed neurite outgrowth. These results demonstrate that ACAP3 positively regulates neurite outgrowth through its GAP activity specific to Arf6. Furthermore, neurite outgrowth suppressed by ACAP3 knockdown was rescued by expression of a fast cycle mutant of Arf6 that spontaneously exchanges guanine nucleotides on Arf6, but not by that of wild-type, GTP- or GDP-locked mutant Arf6. Thus cycling between active and inactive forms of Arf6, which is precisely regulated by ACAP3 in concert with a guanine-nucleotide-exchange factor(s), seems to be required for neurite outgrowth of hippocampal neurons. PMID:27330119

  20. ArfGAP3 regulates the Transport of Cation-Independent Mannose 6-phosphate Receptor in the post-Golgi compartment

    PubMed Central

    Shiba, Yoko; Kametaka, Satoshi; Waguri, Satoshi; Presley, John F.; Randazzo, Paul Agostino

    2013-01-01

    Summary ArfGAPs are known to be involved in cargo sorting in COPI transport. However, the role of ArfGAPs in post-Golgi membrane traffic has not been defined. To determine the function of ArfGAPs in post-Golgi traffic, we used siRNA to examine each of 25 ArfGAPs for effects on cation-independent mannose 6-phosphate receptor (CIMPR) localization. We found that down-regulation of ArfGAP3 resulted in the peripheral localization of CIMPR. The effect was specific for ArfGAP3 and dependent on its GAP activity, because the phenotype was rescued by ArfGAP3 but not by ArfGAP1, ArfGAP2 or the GAP domain mutants of ArfGAP3. ArfGAP3 localized to the trans-Golgi network and early endosomes. In cells with reduced expression of ArfGAP3, Cathepsin D maturation was slowed and its secretion was accelerated. Also retrograde transport from the endosomes to the trans-Golgi network of endogenous CIMPR, but not truncated CIMPR lacking the luminal domain, was perturbed in cells with reduced expression of ArfGAP3. Furthermore the exit of epidermal growth factor receptor (EGFR) from the early endosomes and degradation of EGFR after EGF stimulation was slowed in cells with reduced expression of ArfGAP3. ArfGAP3 associates with Golgi-localized, γ-ear-containing, ADP-ribosylation factor binding proteins (GGAs), and ArfGAP3 knockdown reduces membrane association of GGAs. A possible mechanism explaining our results is that ArfGAP3 regulates transport from early endosomes to late endosomes. We suggest a model in which ArfGAP3 regulates Golgi association of GGA clathrin adaptors. PMID:24076238

  1. Hybrid lithography for triple patterning decomposition and E-beam lithography

    NASA Astrophysics Data System (ADS)

    Tian, Haitong; Zhang, Hongbo; Xiao, Zigang; Wong, Martin D. F.

    2014-03-01

    As we advances into 14/10nm technology node, single patterning technology is far from enough to fabricate the features with shrinking feature size. According to International Technology Roadmap for Semiconductors in 2011,1 double patterning lithography is already available for massive productions in industry for sub-32nm half pitch technology node. For 14/10nm technology node, double patterning begins to show its limitations as it uses too many stitches to resolve the native coloring conflicts. Stitches will increase the manufacturing cost, lead to potential functional errors of the chip, and cause the yield lost. Triple patterning lithography and E-Beam lithography are two emerging techniques to beat the diffraction limit for current optical lithography system. In this paper, we investigate combining the merits of triple patterning lithography and E-Beam lithography for standard cell based designs. We devise an approach to compute a stitch free decomposition with the optimal number of E-Beam shots for row structure layout. The approach is expected to highlight the necessity and advantages of using hybrid lithography for advanced technology node.

  2. Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system

    NASA Astrophysics Data System (ADS)

    Jiang, Ximan

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  3. TRIM28 Is an E3 Ligase for ARF-Mediated NPM1/B23 SUMOylation That Represses Centrosome Amplification

    PubMed Central

    Neo, Shu Hui; Itahana, Yoko; Alagu, Jennifer; Kitagawa, Mayumi; Guo, Alvin Kunyao; Lee, Sang Hyun; Tang, Kai

    2015-01-01

    The tumor suppressor ARF enhances the SUMOylation of target proteins; however, the physiological function of ARF-mediated SUMOylation has been unclear due to the lack of a known, associated E3 SUMO ligase. Here we uncover TRIM28/KAP1 as a novel ARF-binding protein and SUMO E3 ligase for NPM1/B23. ARF and TRIM28 cooperate to SUMOylate NPM1, a nucleolar protein that regulates centrosome duplication and genomic stability. ARF-mediated SUMOylation of NPM1 was attenuated by TRIM28 depletion and enhanced by TRIM28 overexpression. Coexpression of ARF and TRIM28 promoted NPM1 centrosomal localization by enhancing its SUMOylation and suppressed centrosome amplification; these functions required the E3 ligase activity of TRIM28. Conversely, depletion of ARF or TRIM28 increased centrosome amplification. ARF also counteracted oncogenic Ras-induced centrosome amplification. Centrosome amplification is often induced by oncogenic insults, leading to genomic instability. However, the mechanisms employed by tumor suppressors to protect the genome are poorly understood. Our findings suggest a novel role for ARF in maintaining genome integrity by facilitating TRIM28-mediated SUMOylation of NPM1, thus preventing centrosome amplification. PMID:26055329

  4. Advanced mask aligner lithography: new illumination system.

    PubMed

    Voelkel, Reinhard; Vogler, Uwe; Bich, Andreas; Pernet, Pascal; Weible, Kenneth J; Hornung, Michael; Zoberbier, Ralph; Cullmann, Elmar; Stuerzebecher, Lorenz; Harzendorf, Torsten; Zeitner, Uwe D

    2010-09-27

    A new illumination system for mask aligner lithography is presented. The illumination system uses two subsequent microlens-based Köhler integrators. The second Köhler integrator is located in the Fourier plane of the first. The new illumination system uncouples the illumination light from the light source and provides excellent uniformity of the light irradiance and the angular spectrum. Spatial filtering allows to freely shape the angular spectrum to minimize diffraction effects in contact and proximity lithography. Telecentric illumination and ability to precisely control the illumination light allows to introduce resolution enhancement technologies (RET) like customized illumination, optical proximity correction (OPC) and source-mask optimization (SMO) in mask aligner lithography. PMID:20940992

  5. Azidothymidine and cisplatin increase p14ARF expression in OVCAR-3 ovarian cancer cell line

    SciTech Connect

    Vaskivuo, Liisa; Rysae, Jaana; Koivuperae, Johanna; Myllynen, Paeivi; Vaskivuo, Tommi; Chvalova, Katerina; Serpi, Raisa; Savolainen, Eeva-Riitta; Puistola, Ulla; Vaehaekangas, Kirsi . E-mail: kirsi.vahakangas@uku.fi

    2006-10-01

    p14{sup ARF} tumor suppressor protein regulates p53 by interfering with mdm2-p53 interaction. p14{sup ARF} is activated in response to oncogenic stimuli but little is known of the responses of endogenous p14{sup ARF} to different types of cellular stress or DNA damage. Azidothymidine (AZT) is being tested in several clinical trials as an enhancer of anticancer chemotherapy. However, the knowledge of the relationship between AZT and cellular pathways, e.g. p53 pathway, is very limited. In this study, we show that AZT, cisplatin (CDDP) and docetaxel (DTX) all induce unique molecular responses in OVCAR-3 ovarian carcinoma cells carrying a mutated p53, while in A2780, ovarian carcinoma and MCF-7 breast carcinoma cells with wild type p53, all of these drugs cause similar p53 responses. We found that endogenous p14{sup ARF} protein in OVCAR-3 cells is down-regulated by DTX but induced by AZT and a short CDDP pulse treatment. In HT-29 colon carcinoma cells with a mutated p53, all treatments down-regulated p14{sup ARF} protein. Both CDDP and AZT increased the expression of p14ARF mRNA in OVCAR-3 cells. Differences in cell death induced by these drugs did not explain the differences in protein and mRNA expressions. No increase in the level of either c-Myc or H-ras oncoproteins was seen in OVCAR-3 cells after AZT or CDDP-treatment. These results suggest that p14{sup ARF} can respond to DNA damage without oncogene activation in cell lines without functional p53.

  6. Lithography and design in partnership: a new roadmap

    NASA Astrophysics Data System (ADS)

    Kahng, Andrew B.

    2008-10-01

    We discuss the notion of a 'shared technology roadmap' between lithography and design from several perspectives. First, we examine cultural gaps and other intrinsic barriers to a shared roadmap. Second, we discuss how lithography technology can change the design technology roadmap. Third, we discuss how design technology can change the lithography technology roadmap. We conclude with an example of the 'flavor' of technology roadmapping activity that can truly bridge lithography and design.

  7. LAVA: lithography analysis using virtual access

    NASA Astrophysics Data System (ADS)

    Hsu, Chang; Yang, Rona; Cheng, Jeffery; Chien, Peter; Wen, Victor; Neureuther, Andrew R.

    1998-06-01

    A web site allowing remote operation of the SPLAT, SAMPLE, TEMPEST and SIMPL simulators has been developed to promote collaborative work on lithography and in particular on EUV technology. Based on the extensive use of platform independent programming languages, LAVA is accessible from all modern computing platforms. The software supporting the web site is available to others in creating similar web site sites and in making simulators such as those from other universities 'play' together. The web site explores new paradigms in remote operation of lithography simulators and introduces more application-oriented modes of interaction with technologists. The LAVA web site URL is http://cuervo.eecs.berkeley.edu/Volcano/

  8. Extreme ultraviolet lithography and three dimensional integrated circuit—A review

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay

    2014-03-01

    Extreme ultraviolet lithography (EUVL) and three dimensional integrated circuit (3D IC) were thoroughly reviewed. Since proposed in 1988, EUVL obtained intensive studies globally and, after 2000, became the most promising next generation lithography method even though challenges were present in almost all aspects of EUVL technology. Commercial step-and-scan tools for preproduction are installed now with full field capability; however, EUV source power at intermediate focus (IF) has not yet met volume manufacturing requirements. Compared with the target of 200 W in-band power at IF, current tools can supply only approximately 40-55 W. EUVL resist has improved significantly in the last few years, with 13 nm line/space half-pitch resolution being produced with approximately 3-4 nm line width roughness (LWR), but LWR needs 2× improvement. Creating a defect-free EUVL mask is currently an obstacle. Actual adoption of EUVL for 22 nm and beyond technology nodes will depend on the extension of current optical lithography (193 nm immersion lithography, combined with multiple patterning techniques), as well as other methods such as 3D IC. Lithography has been the enabler for IC performance improvement by increasing device density, clock rate, and transistor rate. However, after the turn of the century, IC scaling resulted in short-channel effect, which decreases power efficiency dramatically, so clock frequency almost stopped increasing. Although further IC scaling by lithography reduces gate delay, interconnect delay and memory wall are dominant in determining the IC performance. 3D IC technology is a critical technology today because it offers a reasonable route to further improve IC performance. It increases device density, reduces the interconnect delay, and breaks memory wall with the application of 3D stacking using through silicon via. 3D IC also makes one chip package have more functional diversification than those enhanced only by shrinking the size of the features

  9. Lithography light source fault detection

    NASA Astrophysics Data System (ADS)

    Graham, Matthew; Pantel, Erica; Nelissen, Patrick; Moen, Jeffrey; Tincu, Eduard; Dunstan, Wayne; Brown, Daniel

    2010-04-01

    High productivity is a key requirement for today's advanced lithography exposure tools. Achieving targets for wafers per day output requires consistently high throughput and availability. One of the keys to high availability is minimizing unscheduled downtime of the litho cell, including the scanner, track and light source. From the earliest eximer laser light sources, Cymer has collected extensive performance data during operation of the source, and this data has been used to identify the root causes of downtime and failures on the system. Recently, new techniques have been developed for more extensive analysis of this data to characterize the onset of typical end-of-life behavior of components within the light source and allow greater predictive capability for identifying both the type of upcoming service that will be required and when it will be required. The new techniques described in this paper are based on two core elements of Cymer's light source data management architecture. The first is enhanced performance logging features added to newer-generation light source software that captures detailed performance data; and the second is Cymer OnLine (COL) which facilitates collection and transmission of light source data. Extensive analysis of the performance data collected using this architecture has demonstrated that many light source issues exhibit recognizable patterns in their symptoms. These patterns are amenable to automated identification using a Cymer-developed model-based fault detection system, thereby alleviating the need for detailed manual review of all light source performance information. Automated recognition of these patterns also augments our ability to predict the performance trending of light sources. Such automated analysis provides several efficiency improvements for light source troubleshooting by providing more content-rich standardized summaries of light source performance, along with reduced time-to-identification for previously

  10. SYSTEM CONSIDERATIONS FOR MASKLESS LITHOGRAPHY

    SciTech Connect

    Karnowski, Thomas Paul; Joy, David; Allard Jr, Lawrence Frederick; Clonts, Lloyd G

    2004-01-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting problems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-off switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devices are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  11. System considerations for maskless lithography

    NASA Astrophysics Data System (ADS)

    Karnowski, Thomas; Joy, David; Allard, Larry; Clonts, Lloyd

    2004-05-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting prblems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-ofrf switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devidces are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  12. Novel low-reflective index fluoropolymers-based top anti-reflective coatings (TARC) for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Yamashita, Tsuneo; Hayami, Takashi; Ishikawa, Takuji; Kanemura, Takashi; Aoyama, Hirokazu

    2007-03-01

    Implant lithography, which has up to now utilized 365-nm (i-line) and 248-nm (KrF) light sources, must now turn to 193-nm (ArF) sources. In implant lithography, an anti-reflective material is often used to coat the resist-film. The top anti-reflective coating (abbreviated to TARC) is most often used to reduce CD swing. TARC materials must have low refractive index and water solubility. The TARC materials for used 193-nm use must have very low reflective index and alternatives to perfluorooctylsulfonic acid (PFOS) and perfluorooctanoic acid (PFOA) must be found. We synthesized some novel fluorinated amorphous polymers as 193-nm TARC candidates. Their fundamental properties were characterized, such as transparency and reflective index at 193-nm (wavelength) along with their solubility in water and a standard alkaline developer. High transparency, i.e., k value less than 0.01, and very low reflective index, i.e., lower than n=1.4 at 193-nm wavelength are confirmed. Their dissolution behaviors are studied using the Quartz Crystal Microbalance (QCM) method. In surprise finding, we find that several of the polymers examined, those that have high fluorine content, dissolved in water. Test results show that the proposed polymers can be applied as top anti reflective coatings .

  13. Genetic interactions in yeast between Ypt GTPases and Arf guanine nucleotide exchangers.

    PubMed Central

    Jones, S; Jedd, G; Kahn, R A; Franzusoff, A; Bartolini, F; Segev, N

    1999-01-01

    Two families of GTPases, Arfs and Ypt/rabs, are key regulators of vesicular transport. While Arf proteins are implicated in vesicle budding from the donor compartment, Ypt/rab proteins are involved in the targeting of vesicles to the acceptor compartment. Recently, we have shown a role for Ypt31/32p in exit from the yeast trans-Golgi, suggesting a possible function for Ypt/rab proteins in vesicle budding as well. Here we report the identification of a new member of the Sec7-domain family, SYT1, as a high-copy suppressor of a ypt31/32 mutation. Several proteins that belong to the Sec7-domain family, including the yeast Gea1p, have recently been shown to stimulate nucleotide exchange by Arf GTPases. Nucleotide exchange by Arf GTPases, the switch from the GDP- to the GTP-bound form, is thought to be crucial for their function. Sec7p itself has an important role in the yeast secretory pathway. However, its mechanism of action is not yet understood. We show that all members of the Sec7-domain family exhibit distinct genetic interactions with the YPT genes. Biochemical assays demonstrate that, although the homology between the members of the Sec7-domain family is relatively low (20-35%) and limited to a small domain, they all can act as guanine nucleotide exchange factors (GEFs) for Arf proteins, but not for Ypt GTPases. The Sec7-domain of Sec7p is sufficient for this activity. Interestingly, the Sec7 domain activity is inhibited by brefeldin A (BFA), a fungal metabolite that inhibits some of the Arf-GEFs, indicating that this domain is a target for BFA. These results demonstrate that the ability to act as Arf-GEFs is a general property of all Sec7-domain proteins in yeast. The genetic interactions observed between Arf GEFs and Ypt GTPases suggest the existence of a Ypt-Arf GTPase cascade in the secretory pathway. PMID:10430582

  14. A role for Arf1 in mitotic Golgi disassembly, chromosome segregation, and cytokinesis

    PubMed Central

    Altan-Bonnet, Nihal; Phair, Robert D.; Polishchuk, Roman S.; Weigert, Roberto; Lippincott-Schwartz, Jennifer

    2003-01-01

    In mitosis, chromosome, cytoskeleton, and organelle dynamics must be coordinated for successful cell division. Here, we present evidence for a role for Arf1, a small GTPase associated with the Golgi apparatus, in the orchestration of mitotic Golgi breakdown, chromosome segregation, and cytokinesis. We show that early in mitosis Arf1 becomes inactive and dissociates from Golgi membranes. This is followed by the dispersal of numerous Arf1-dependent peripheral Golgi proteins and subsequent Golgi disassembly. If Arf1 is kept in an active state by treatment with the small molecule H89 or expression of its GTP-locked form, intact Golgi membranes with bound peripheral proteins persist throughout mitosis. These cells enter mitosis but exhibit gross defects in chromosome segregation and cytokinetic furrow ingression. These findings suggest that mitotic Golgi disassembly depends on Arf1 inactivation and is used by the cell to disperse numerous peripheral Golgi proteins for coordinating the behavior of Golgi membranes, chromosomes, and cytoskeleton during mitosis. PMID:14585930

  15. Natural variation in ARF18 gene simultaneously affects seed weight and silique length in polyploid rapeseed.

    PubMed

    Liu, Jing; Hua, Wei; Hu, Zhiyong; Yang, Hongli; Zhang, Liang; Li, Rongjun; Deng, Linbin; Sun, Xingchao; Wang, Xinfa; Wang, Hanzhong

    2015-09-15

    Seed weight (SW), which is one of the three major factors influencing grain yield, has been widely accepted as a complex trait that is controlled by polygenes, particularly in polyploid crops. Brassica napus L., which is the second leading crop source for vegetable oil around the world, is a tetraploid (4×) species. In the present study, we identified a major quantitative trait locus (QTL) on chromosome A9 of rapeseed in which the genes for SW and silique length (SL) were colocated. By fine mapping and association analysis, we uncovered a 165-bp deletion in the auxin-response factor 18 (ARF18) gene associated with increased SW and SL. ARF18 encodes an auxin-response factor and shows inhibitory activity on downstream auxin genes. This 55-aa deletion prevents ARF18 from forming homodimers, in turn resulting in the loss of binding activity. Furthermore, reciprocal crossing has shown that this QTL affects SW by maternal effects. Transcription analysis has shown that ARF18 regulates cell growth in the silique wall by acting via an auxin-response pathway. Together, our results suggest that ARF18 regulates silique wall development and determines SW via maternal regulation. In addition, our study reveals the first (to our knowledge) QTL in rapeseed and may provide insights into gene cloning involving polyploid crops. PMID:26324896

  16. Natural variation in ARF18 gene simultaneously affects seed weight and silique length in polyploid rapeseed

    PubMed Central

    Liu, Jing; Hua, Wei; Hu, Zhiyong; Yang, Hongli; Zhang, Liang; Li, Rongjun; Deng, Linbin; Sun, Xingchao; Wang, Xinfa; Wang, Hanzhong

    2015-01-01

    Seed weight (SW), which is one of the three major factors influencing grain yield, has been widely accepted as a complex trait that is controlled by polygenes, particularly in polyploid crops. Brassica napus L., which is the second leading crop source for vegetable oil around the world, is a tetraploid (4×) species. In the present study, we identified a major quantitative trait locus (QTL) on chromosome A9 of rapeseed in which the genes for SW and silique length (SL) were colocated. By fine mapping and association analysis, we uncovered a 165-bp deletion in the auxin-response factor 18 (ARF18) gene associated with increased SW and SL. ARF18 encodes an auxin-response factor and shows inhibitory activity on downstream auxin genes. This 55-aa deletion prevents ARF18 from forming homodimers, in turn resulting in the loss of binding activity. Furthermore, reciprocal crossing has shown that this QTL affects SW by maternal effects. Transcription analysis has shown that ARF18 regulates cell growth in the silique wall by acting via an auxin-response pathway. Together, our results suggest that ARF18 regulates silique wall development and determines SW via maternal regulation. In addition, our study reveals the first (to our knowledge) QTL in rapeseed and may provide insights into gene cloning involving polyploid crops. PMID:26324896

  17. Immersible solar heater for fluids

    DOEpatents

    Kronberg, James W.

    1995-01-01

    An immersible solar heater comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater.

  18. Immersion francaise precoce. Early French Immersion: Administrator's Resource Book.

    ERIC Educational Resources Information Center

    Burt, Andy

    This handbook (in English) is part of a series of early French immersion program teaching guides--all written in French--and is designed to serve as a guide for administrators in schools with classes of students who are being instructed in French for a large part of their school program. It addresses itself to areas of concern which are unique to…

  19. Development of MOEMS technology in maskless lithography

    NASA Astrophysics Data System (ADS)

    Smith, David; Klenk, Dieter

    2009-02-01

    Micro-opto-electro-mechanical-systems (MOEMS) have proven to be a facilitating technology in the lithography industry. Recently, there have been significant advancements in digital micromirror device (DMD) based maskless lithography. These advancements have been in the areas of throughput, resolution, accuracy, and cost reduction. This progression in digital micromirror evolution provides considerable opportunities to displace existing lithographic techniques. Precise control of the individual mircormirrors, including scrolling, and full utilization of the FPGA, have allowed DMD-based lithography systems to reach new levels of throughput and repeatability, while reducing production and warranty costs. Throughput levels have far surpassed scanning laser techniques. Chip level cooling technologies allow for higher incident power to be reliably distributed over larger areas of the substrate. Resolution roadmaps are in place to migrate from the current 2400dpi (11μm) to 4800dpi (5.3μm). Without the constraints of mask requirements, mask alignment, storage, and defect analysis are not required, thus increasing accuracy and reducing cost. This contribution will examine the advancements in and benefits of DMD based maskless lithography.

  20. Recent Progress On Submicron Electron Beam Lithography

    NASA Astrophysics Data System (ADS)

    Takigawa, Tadahiro; Shimazaki, Kuniya; Kusui, Naoki

    1986-06-01

    In order to fabricate submicron pattern, total electron beam (EB) lithography system has been developed. Upper submicron pattern will be realized by optical lithography, which requires reticle with high accuracy. An EB writing system, EBM-130/40, has the performance of drawing capability of 4 M bit DRAM reticle pattern in about 40 minutes. The EB system incorporated with peripheral technologies including data compaction conversion software, reticle inspection system, APC-130R, and EBR-9 resist process can produce advanced reticles of number of about 600 per month. For lower submicron pattern formation, next generation lithography system is required. The EBM-130V is the variable shaped EB system with high acceleration voltage of 50 kV and high dosage of 50 μC/cm2 for direct writing and X-ray mask fabrication for development of the high bit density VLSI pattern. This system makes possible EB/optical combined lithography. Its metrology function allows it to measure X-ray mask distortion.

  1. Arf nucleotide binding site opener [ARNO] promotes sequential activation of Arf6, Cdc42 and Rac1 and insulin secretion in INS 832/13 β-cells and rat islets

    PubMed Central

    Jayaram, Bhavaani; Syed, Ismail; Kyathanahalli, Chandrashekara N.; Rhodes, Christopher J.; Kowluru, Anjaneyulu

    2011-01-01

    Glucose-stimulated insulin secretion [GSIS] involves interplay between small G-proteins and their regulatory factors. Herein, we tested the hypothesis that Arf nucleotide binding site opener [ARNO], a guanine nucleotide exchange factor [GEF] for the small G-protein Arf6, mediates the functional activation of Arf6, and that ARNO/Arf6 signaling axis, in turn, controls the activation of Cdc42 and Rac1, which have been implicated in GSIS. Molecular biological [i.e., expression of inactive mutants or siRNA] and pharmacological approaches were employed to assess the roles for ARNO/Arf6 signaling pathway in insulin secretion in normal rat islets and INS 832/13 cells. Degrees of activation of Arf6 and Cdc42/Rac1 were quantitated by GST-GGA3 and PAK-1 kinase pull-down assays, respectively. ARNO is expressed in INS 832/13 cells, rat islets and human islets. Expression of inactive mutants of Arf6 [Arf6-T27N] or ARNO [ARNO-E156K] or siRNA-ARNO markedly reduced GSIS in isolated β-cells. secinH3, a selective inhibitor of ARNO/Arf6 signaling axis, also inhibited GSIS in INS 832/13 cells and rat islets. Stimulatory concentrations of glucose promoted Arf6 activation, which was inhibited by secinH3 or siRNA-ARNO, suggesting that ARNO/Arf6 signaling cascade is necessary for GSIS. secinH3 or siRNA-ARNO also inhibited glucose-induced activation of Cdc42 and Rac1 suggesting that ARNO/Arf6 might be upstream to Cdc42 and Rac1 activation steps, which are necessary for GSIS. Lastly, co-immunoprecipitation and confocal microscopic studies suggested increased association between Arf6 and ARNO in glucose-stimulated β-cells. These findings provide the first evidence to implicate ARNO in the sequential activation of Arf6, Cdc42 and Rac1 culminating in GSIS. PMID:21276423

  2. ARF1 activation dissociates ADRP from lipid droplets to promote HCV assembly.

    PubMed

    Zhang, Na; Yin, Peiqi; Zhou, Liya; Li, Hongyan; Zhang, Leiliang

    2016-06-17

    Lipid droplets are the place for HCV assembly and ADRP is an abundant lipid droplets-associated protein. However, little is known about the mechanisms how ADRP is involved in HCV life cycle. Here we demonstrate that activation of ARF1 dissociates ADRP from lipid droplets. A constitute active form of ARF1 (ARF1Q71I) promotes HCV assembly. We found that ADRP plays a positive role in HCV replication and a negative role in HCV assembly. Overexpression of ADRP increases the size of lipid droplets, while silencing ADRP reduces the size of lipid droplets. These findings provide new insight into the role of lipid droplets proteins in life cycle of HCV. PMID:27157138

  3. ARF6 Is an Actionable Node that Orchestrates Oncogenic GNAQ Signaling in Uveal Melanoma.

    PubMed

    Yoo, Jae Hyuk; Shi, Dallas S; Grossmann, Allie H; Sorensen, Lise K; Tong, ZongZhong; Mleynek, Tara M; Rogers, Aaron; Zhu, Weiquan; Richards, Jackson R; Winter, Jacob M; Zhu, Jie; Dunn, Christine; Bajji, Ashok; Shenderovich, Mark; Mueller, Alan L; Woodman, Scott E; Harbour, J William; Thomas, Kirk R; Odelberg, Shannon J; Ostanin, Kirill; Li, Dean Y

    2016-06-13

    Activating mutations in Gαq proteins, which form the α subunit of certain heterotrimeric G proteins, drive uveal melanoma oncogenesis by triggering multiple downstream signaling pathways, including PLC/PKC, Rho/Rac, and YAP. Here we show that the small GTPase ARF6 acts as a proximal node of oncogenic Gαq signaling to induce all of these downstream pathways as well as β-catenin signaling. ARF6 activates these diverse pathways through a common mechanism: the trafficking of GNAQ and β-catenin from the plasma membrane to cytoplasmic vesicles and the nucleus, respectively. Blocking ARF6 with a small-molecule inhibitor reduces uveal melanoma cell proliferation and tumorigenesis in a mouse model, confirming the functional relevance of this pathway and suggesting a therapeutic strategy for Gα-mediated diseases. PMID:27265506

  4. ARF and ATM/ATR cooperate in p53-mediated apoptosis upon oncogenic stress

    SciTech Connect

    Pauklin, Siim . E-mail: spauklin@ut.ee; Kristjuhan, Arnold; Maimets, Toivo; Jaks, Viljar

    2005-08-26

    Induction of apoptosis is pivotal for eliminating cells with damaged DNA or deregulated proliferation. We show that tumor suppressor ARF and ATM/ATR kinase pathways cooperate in the induction of apoptosis in response to elevated expression of c-myc, {beta}-catenin or human papilloma virus E7 oncogenes. Overexpression of oncogenes leads to the formation of phosphorylated H2AX foci, induction of Rad51 protein levels and ATM/ATR-dependent phosphorylation of p53. Inhibition of ATM/ATR kinases abolishes both induction of Rad51 and phosphorylation of p53, and remarkably reduces the level of apoptosis induced by co-expression of oncogenes and ARF. However, the induction of apoptosis is downregulated in p53-/- cells and does not depend on activities of ATM/ATR kinases, indicating that efficient induction of apoptosis by oncogene activation depends on coordinated action of ARF and ATM/ATR pathways in the regulation of p53.

  5. PML IV/ARF interaction enhances p53 SUMO-1 conjugation, activation, and senescence

    PubMed Central

    Ivanschitz, Lisa; Takahashi, Yuki; Jollivet, Florence; Ayrault, Olivier; Le Bras, Morgane; de Thé, Hugues

    2015-01-01

    Promyelocytic leukemia protein (PML) nuclear bodies (NBs) recruit multiple partners, including p53 and many of its regulators. NBs are believed to facilitate several posttranslational modifications and are key regulators of senescence. PML, the organizer of NBs, is expressed as a number of splice variants that all efficiently recruit p53 partners. However, overexpression of only one of them, PML IV, triggers p53-driven senescence. Here, we show that PML IV specifically binds ARF, a key p53 regulator. Similar to ARF, PML IV enhances global SUMO-1 conjugation, particularly that of p53, resulting in p53 stabilization and activation. ARF interacts with and stabilizes the NB-associated UBC9 SUMO-conjugating enzyme, possibly explaining PML IV-enhanced SUMOylation. These results unexpectedly link two key tumor suppressors, highlighting their convergence for global control of SUMO conjugation, p53 activation, and senescence induction. PMID:26578773

  6. Immersive Education, an Annotated Webliography

    ERIC Educational Resources Information Center

    Pricer, Wayne F.

    2011-01-01

    In this second installment of a two-part feature on immersive education a webliography will provide resources discussing the use of various types of computer simulations including: (a) augmented reality, (b) virtual reality programs, (c) gaming resources for teaching with technology, (d) virtual reality lab resources, (e) virtual reality standards…

  7. Learning immersion without getting wet

    NASA Astrophysics Data System (ADS)

    Aguilera, Julieta C.

    2012-03-01

    This paper describes the teaching of an immersive environments class on the Spring of 2011. The class had students from undergraduate as well as graduate art related majors. Their digital background and interests were also diverse. These variables were channeled as different approaches throughout the semester. Class components included fundamentals of stereoscopic computer graphics to explore spatial depth, 3D modeling and skeleton animation to in turn explore presence, exposure to formats like a stereo projection wall and dome environments to compare field of view across devices, and finally, interaction and tracking to explore issues of embodiment. All these components were supported by theoretical readings discussed in class. Guest artists presented their work in Virtual Reality, Dome Environments and other immersive formats. Museum professionals also introduced students to space science visualizations, which utilize immersive formats. Here I present the assignments and their outcome, together with insights as to how the creation of immersive environments can be learned through constraints that expose students to situations of embodied cognition.

  8. The Sec7 N-terminal regulatory domains facilitate membrane-proximal activation of the Arf1 GTPase

    PubMed Central

    Richardson, Brian C; Halaby, Steve L; Gustafson, Margaret A; Fromme, J Christopher

    2016-01-01

    The Golgi complex is the central sorting compartment of eukaryotic cells. Arf guanine nucleotide exchange factors (Arf-GEFs) regulate virtually all traffic through the Golgi by activating Arf GTPase trafficking pathways. The Golgi Arf-GEFs contain multiple autoregulatory domains, but the precise mechanisms underlying their function remain largely undefined. We report a crystal structure revealing that the N-terminal DCB and HUS regulatory domains of the Arf-GEF Sec7 form a single structural unit. We demonstrate that the established role of the N-terminal region in dimerization is not conserved; instead, a C-terminal autoinhibitory domain is responsible for dimerization of Sec7. We find that the DCB/HUS domain amplifies the ability of Sec7 to activate Arf1 on the membrane surface by facilitating membrane insertion of the Arf1 amphipathic helix. This enhancing function of the Sec7 N-terminal domains is consistent with the high rate of Arf1-dependent trafficking to the plasma membrane necessary for maximal cell growth. DOI: http://dx.doi.org/10.7554/eLife.12411.001 PMID:26765562

  9. The Solanum lycopersicum auxin response factor 7 (SlARF7) regulates auxin signaling during tomato fruit set and development.

    PubMed

    de Jong, Maaike; Wolters-Arts, Mieke; Feron, Richard; Mariani, Celestina; Vriezen, Wim H

    2009-01-01

    Auxin response factors (ARFs) are encoded by a gene family of transcription factors that specifically control auxin-dependent developmental processes. A tomato ARF gene, homologous to Arabidopsis NPH4/ARF7 and therefore designated as Solanum lycopersicum ARF7 (SlARF7), was found to be expressed at a high level in unpollinated mature ovaries. More detailed analysis of tomato ovaries showed that the level of SlARF7 transcript increases during flower development, remains at a constant high level in mature flowers, and is down-regulated within 48 h after pollination. Transgenic plants with decreased SlARF7 mRNA levels formed seedless (parthenocarpic) fruits. These fruits were heart-shaped and had a rather thick pericarp due to increased cell expansion, compared with the pericarp of wild-type fruits. The expression analysis, together with the parthenocarpic fruit phenotype of the transgenic lines, suggests that, in tomato, SlARF7 acts as a negative regulator of fruit set until pollination and fertilization have taken place, and moderates the auxin response during fruit growth. PMID:18778404

  10. Protein-protein interaction and gene co-expression maps of ARFs and Aux/IAAs in Arabidopsis

    PubMed Central

    Piya, Sarbottam; Shrestha, Sandesh K.; Binder, Brad; Stewart, C. Neal; Hewezi, Tarek

    2014-01-01

    The phytohormone auxin regulates nearly all aspects of plant growth and development. Based on the current model in Arabidopsis thaliana, Auxin/indole-3-acetic acid (Aux/IAA) proteins repress auxin-inducible genes by inhibiting auxin response transcription factors (ARFs). Experimental evidence suggests that heterodimerization between Aux/IAA and ARF proteins are related to their unique biological functions. The objective of this study was to generate the Aux/IAA-ARF protein-protein interaction map using full length sequences and locate the interacting protein pairs to specific gene co-expression networks in order to define tissue-specific responses of the Aux/IAA-ARF interactome. Pairwise interactions between 19 ARFs and 29 Aux/IAAs resulted in the identification of 213 specific interactions of which 79 interactions were previously unknown. The incorporation of co-expression profiles with protein-protein interaction data revealed a strong correlation of gene co-expression for 70% of the ARF-Aux/IAA interacting pairs in at least one tissue/organ, indicative of the biological significance of these interactions. Importantly, ARF4-8 and 19, which were found to interact with almost all Aux-Aux/IAA showed broad co-expression relationships with Aux/IAA genes, thus, formed the central hubs of the co-expression network. Our analyses provide new insights into the biological significance of ARF-Aux/IAA associations in the morphogenesis and development of various plant tissues and organs. PMID:25566309

  11. Expression of the Novel Hepatitis C Virus Core+1/ARF Protein in the Context of JFH1-Based Replicons

    PubMed Central

    Kotta-Loizou, Ioly; Karakasiliotis, Ioannis; Vassilaki, Niki; Sakellariou, Panagiotis; Bartenschlager, Ralf

    2015-01-01

    Hepatitis C virus contains a second open reading frame within the core gene, designated core+1/ARF. Here we demonstrate for the first time expression of core+1/ARF protein in the context of a bicistronic JFH1-based replicon and report the production of two isoforms, core+1/L (long) and core+1/S (short), with different kinetics. PMID:25694591

  12. Molecular structure and peptidoglycan recognition of Mycobacterium tuberculosis ArfA (Rv0899)

    PubMed Central

    Yao, Yong; Barghava, Neha; Kim, Johnny; Niederweis, Michael; Marassi, Francesca M.

    2012-01-01

    M. tuberculosis ArfA (Rv0899) is a membrane protein encoded by an operon that is required for supporting bacterial growth in acidic environments. Its C-terminal domain (C domain) shares significant sequence homology with the OmpA-like family of peptidoglycan-binding domains, suggesting that its physiological function in acid stress protection may be related to its interaction with the mycobacterial cell wall. Previously, we showed that ArfA forms three independently structured modules and we reported the structure of its central domain (B domain). Here we describe the high-resolution structure and dynamics of the C domain, we identify ArfA as a peptidoglycan-binding protein, and elucidate the molecular basis for its specific recognition of diaminopimelate (DAP) type peptidoglycan. The C domain of ArfA adopts the characteristic fold of the OmpA-like family. It exhibits pH-dependent conformational dynamics (with significant hereogeneity at neutral pH and a more ordered structure at acidic pH), which could be related to its acid-stress response. The C domain associates tightly with polymeric peptidoglycan isolated from M. tuberculosis and also associates with a soluble peptide intermediate of peptidoglycan biosynthesis. This enabled us to characterize the peptidoglycan binding site where five highly conserved ArfA residues, including two key arginines, establish the specificity for DAP- but not Lys-type peptidoglycan. ArfA is the first peptidoglycan-binding protein to be identified in M. tuberculosis. Its functions in acid stress protection and peptidoglycan binding suggest a link between the acid stress response and the physico-chemical properties of the mycobacterial cell wall. PMID:22206986

  13. Molecular mechanisms of Sar/Arf GTPases in vesicular trafficking in yeast and plants

    PubMed Central

    Yorimitsu, Tomohiro; Sato, Ken; Takeuchi, Masaki

    2014-01-01

    Small GTPase proteins play essential roles in the regulation of vesicular trafficking systems in eukaryotic cells. Two types of small GTPases, secretion-associated Ras-related protein (Sar) and ADP-ribosylation factor (Arf), act in the biogenesis of transport vesicles. Sar/Arf GTPases function as molecular switches by cycling between active, GTP-bound and inactive, GDP-bound forms, catalyzed by guanine nucleotide exchange factors and GTPase-activating proteins, respectively. Activated Sar/Arf GTPases undergo a conformational change, exposing the N-terminal amphipathic α-helix for insertion into membranes. The process triggers the recruitment and assembly of coat proteins to the membranes, followed by coated vesicle formation and scission. In higher plants, Sar/Arf GTPases also play pivotal roles in maintaining the dynamic identity of organelles in the secretory pathway. Sar1 protein strictly controls anterograde transport from the endoplasmic reticulum (ER) through the recruitment of plant COPII coat components onto membranes. COPII vesicle transport is responsible for the organization of highly conserved polygonal ER networks. In contrast, Arf proteins contribute to the regulation of multiple trafficking routes, including transport through the Golgi complex and endocytic transport. These transport systems have diversified in the plant kingdom independently and exhibit several plant-specific features with respect to Golgi organization, endocytic cycling, cell polarity and cytokinesis. The functional diversification of vesicular trafficking systems ensures the multicellular development of higher plants. This review focuses on the current knowledge of Sar/Arf GTPases, highlighting the molecular details of GTPase regulation in vesicle formation in yeast and advances in knowledge of the characteristics of vesicle trafficking in plants. PMID:25191334

  14. Annealing of induced absorption in quartz glasses by ArF laser radiation

    SciTech Connect

    Sergeev, P B; Sergeev, A P

    2010-11-13

    Annealing of individual bands of electron-beam-induced absorption (IA) in the region of 150 - 400 nm in KS-4V, KU-1, and Corning 7980 (ArF Grade) quartz glasses by ArF laser radiation is studied. It is shown that the phototransformation of the IA spectra occurs mainly due to a significant decrease in the amplitudes of bands at {lambda} = 183.5, 213, and 260 nm. The role played by interstitial oxygen, hydrogen, and chlorine in the formation and relaxation of glass defects is considered. (effects of laser radiation on matter. laser plasma)

  15. Molecular cloning and characterization of an ADP-ribosylation factor 6 gene (ptARF6) from Pisolithus tinctorius.

    PubMed

    Wang, Liling; Li, Haibo; Zhou, Yifeng; Qin, Yuchuan; Wang, Yanbin; Liu, Bentong; Qian, Hua

    2016-05-01

    ADP-ribosylation factor 6 (ARF6) is an evolutionarily conserved molecule that has an essential function in intracellular trafficking and organelle structure. To better understand its role during presymbiosis between plant roots and compatible filamentous fungi, the full-length cDNA sequence of ARF6 from Pisolithus tinctorius was cloned and a variety of bioinformatics analyses performed. The full-length sequence was 849 bp long and contained a 549 bp open reading frame encoding a protein of 182 amino acids. A phylogenetic analysis showed that ptARF6 was the ortholog of the ADP ribosylation factor 6/GTPase SAR1 gene from the white-rot basidiomycete Trametes versicolor. A domain architecture analysis of the ARF6 protein revealed a repeat region, which is a common feature of ARF6 in other species. Recombinant ARF6 protein was expressed with an N-terminal 6×His tag and purified using Ni(2+)-NTA affinity chromatography. The molecular mass of the recombinant protein was estimated by SDS-PAGE to be 25 kDa. The recombinant ARF6 protein bound strongly to 18:1 and 18:2 phosphatidic acids. Thus, ARF6 may participate in the signaling pathways involved in membrane phospholipid composition. The intracellular distribution of ptADP6 in HEK239T cells also indicates that ptADP6 may function not only in plasma membrane events but also in endosomal membranes events. Real-time quantitative PCR revealed that the differential expression of ptARF6 was associated with the presymbiotic stage. ptARF6 may be induced by presymbiosis during the regulation of mycorrhizal formation. PMID:26928195

  16. ADP Ribosylation Factor 6 (ARF6) Promotes Acrosomal Exocytosis by Modulating Lipid Turnover and Rab3A Activation*

    PubMed Central

    Pelletán, Leonardo E.; Suhaiman, Laila; Vaquer, Cintia C.; Bustos, Matías A.; De Blas, Gerardo A.; Vitale, Nicolas; Mayorga, Luis S.; Belmonte, Silvia A.

    2015-01-01

    Regulated secretion is a central issue for the specific function of many cells; for instance, mammalian sperm acrosomal exocytosis is essential for egg fertilization. ARF6 (ADP-ribosylation factor 6) is a small GTPase implicated in exocytosis, but its downstream effectors remain elusive in this process. We combined biochemical, functional, and microscopy-based methods to show that ARF6 is present in human sperm, localizes to the acrosomal region, and is required for calcium and diacylglycerol-induced exocytosis. Results from pulldown assays show that ARF6 exchanges GDP for GTP in sperm challenged with different exocytic stimuli. Myristoylated and guanosine 5′-3-O-(thio)triphosphate (GTPγS)-loaded ARF6 (active form) added to permeabilized sperm induces acrosome exocytosis even in the absence of extracellular calcium. We explore the ARF6 signaling cascade that promotes secretion. We demonstrate that ARF6 stimulates a sperm phospholipase D activity to produce phosphatidic acid and boosts the synthesis of phosphatidylinositol 4,5-bisphosphate. We present direct evidence showing that active ARF6 increases phospholipase C activity, causing phosphatidylinositol 4,5-bisphosphate hydrolysis and inositol 1,4,5-trisphosphate-dependent intra-acrosomal calcium release. We show that active ARF6 increases the exchange of GDP for GTP on Rab3A, a prerequisite for secretion. We propose that exocytic stimuli activate ARF6, which is required for acrosomal calcium efflux and the assembly of the membrane fusion machinery. This report highlights the physiological importance of ARF6 as a key factor for human sperm exocytosis and fertilization. PMID:25713146

  17. Hybrid immersed interface-immersed boundary methods for AC dielectrophoresis

    SciTech Connect

    Hossan, Mohammad Robiul; Dillon, Robert; Dutta, Prashanta

    2014-08-01

    Dielectrophoresis, a nonlinear electrokinetic transport mechanism, has become popular in many engineering applications including manipulation, characterization and actuation of biomaterials, particles and biological cells. In this paper, we present a hybrid immersed interface–immersed boundary method to study AC dielectrophoresis where an algorithm is developed to solve the complex Poisson equation using a real variable formulation. An immersed interface method is employed to obtain the AC electric field in a fluid media with suspended particles and an immersed boundary method is used for the fluid equations and particle transport. The convergence of the proposed algorithm as well as validation of the hybrid scheme with experimental results is presented. In this paper, the Maxwell stress tensor is used to calculate the dielectrophoretic force acting on particles by considering the physical effect of particles in the computational domain. Thus, this study eliminates the approximations used in point dipole methods for calculating dielectrophoretic force. A comparative study between Maxwell stress tensor and point dipole methods for computing dielectrophoretic forces are presented. The hybrid method is used to investigate the physics of dielectrophoresis in microfluidic devices using an AC electric field. The numerical results show that with proper design and appropriate selection of applied potential and frequency, global electric field minima can be obtained to facilitate multiple particle trapping by exploiting the mechanism of negative dielectrophoresis. Our numerical results also show that electrically neutral particles form a chain parallel to the applied electric field irrespective of their initial orientation when an AC electric field is applied. This proposed hybrid numerical scheme will help to better understand dielectrophoresis and to design and optimize microfluidic devices.

  18. Hybrid immersed interface-immersed boundary methods for AC dielectrophoresis

    NASA Astrophysics Data System (ADS)

    Hossan, Mohammad Robiul; Dillon, Robert; Dutta, Prashanta

    2014-08-01

    Dielectrophoresis, a nonlinear electrokinetic transport mechanism, has become popular in many engineering applications including manipulation, characterization and actuation of biomaterials, particles and biological cells. In this paper, we present a hybrid immersed interface-immersed boundary method to study AC dielectrophoresis where an algorithm is developed to solve the complex Poisson equation using a real variable formulation. An immersed interface method is employed to obtain the AC electric field in a fluid media with suspended particles and an immersed boundary method is used for the fluid equations and particle transport. The convergence of the proposed algorithm as well as validation of the hybrid scheme with experimental results is presented. In this paper, the Maxwell stress tensor is used to calculate the dielectrophoretic force acting on particles by considering the physical effect of particles in the computational domain. Thus, this study eliminates the approximations used in point dipole methods for calculating dielectrophoretic force. A comparative study between Maxwell stress tensor and point dipole methods for computing dielectrophoretic forces are presented. The hybrid method is used to investigate the physics of dielectrophoresis in microfluidic devices using an AC electric field. The numerical results show that with proper design and appropriate selection of applied potential and frequency, global electric field minima can be obtained to facilitate multiple particle trapping by exploiting the mechanism of negative dielectrophoresis. Our numerical results also show that electrically neutral particles form a chain parallel to the applied electric field irrespective of their initial orientation when an AC electric field is applied. This proposed hybrid numerical scheme will help to better understand dielectrophoresis and to design and optimize microfluidic devices.

  19. 46 CFR 199.273 - Immersion suits.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Immersion suits. 199.273 Section 199.273 Shipping COAST... SYSTEMS FOR CERTAIN INSPECTED VESSELS Additional Requirements for Cargo Vessels § 199.273 Immersion suits. (a) Each cargo vessel must carry an immersion suit approved under approval series 160.171 of...

  20. High Efficiency Germanium Immersion Gratings

    SciTech Connect

    Kuzmenko, P J; Davis, P J; Little, S L; Little, L M; Bixler, J V

    2006-05-01

    We have fabricated several germanium immersion gratings by single crystal, single point diamond flycutting on an ultra-precision lathe. Use of a dead sharp tool produces groove corners less than 0.1 micron in radius and consequently high diffraction efficiency. We measured first order efficiencies in immersion of over 80% at 10.6 micron wavelength. Wavefront error was low averaging 0.06 wave rms (at 633 nm) across the full aperture. The grating spectral response was free of ghosts down to our detection limit of 1 part in 10{sup 4}. Scatter should be low based upon the surface roughness. Measurement of the spectral line profile of a CO{sub 2} laser sets an upper bound on total integrated scatter of 0.5%.

  1. Planar immersion lens with metasurfaces

    NASA Astrophysics Data System (ADS)

    Ho, John S.; Qiu, Brynan; Tanabe, Yuji; Yeh, Alexander J.; Fan, Shanhui; Poon, Ada S. Y.

    2015-03-01

    The solid immersion lens is a powerful optical tool that allows light entering material from air or a vacuum to focus to a spot much smaller than the free-space wavelength. Conventionally, however, the lenses rely on semispherical topographies and are nonplanar and bulky, which limits their integration in many applications. Recently, there has been considerable interest in using planar structures, referred to as metasurfaces, to construct flat optical components for manipulating light in unusual ways. Here, we propose and demonstrate the concept of a planar immersion lens based on metasurfaces. The resulting planar device, when placed near an interface between air and dielectric material, can focus electromagnetic radiation incident from air to a spot in the material smaller than the free-space wavelength. As an experimental demonstration, we fabricate an ultrathin and flexible microwave lens and further show that it achieves wireless energy transfer in material mimicking biological tissue.

  2. High efficiency germanium immersion gratings

    NASA Astrophysics Data System (ADS)

    Kuzmenko, Paul J.; Davis, Pete J.; Little, Steve L.; Little, Liesl M.; Bixler, Jay V.

    2006-06-01

    We have fabricated several germanium immersion gratings by single crystal, single point diamond flycutting on an ultra-precision lathe. Use of a dead sharp tool produces groove corners less than 0.1 micron in radius and consequently high diffraction efficiency. We measured first order efficiencies in immersion of over 80% at 10.6 micron wavelength. Wavefront error was low averaging 0.06 wave rms (at 633 nm) across the full aperture. The grating spectral response was free of ghosts down to our detection limit of 1 part in 104. Scatter should be low based upon the surface roughness. Measurement of the spectral line profile of a CO II laser sets an upper bound on total integrated scatter of 0.5%.

  3. Immersive Environments - A Connectivist Approach

    NASA Astrophysics Data System (ADS)

    Loureiro, Ana; Bettencourt, Teresa

    We are conducting a research project with the aim of achieving better and more efficient ways to facilitate teaching and learning in Higher Level Education. We have chosen virtual environments, with particular emphasis to Second Life® platform augmented by web 2.0 tools, to develop the study. The Second Life® environment has some interesting characteristics that captured our attention, it is immersive; it is a real world simulator; it is a social network; it allows real time communication, cooperation, collaboration and interaction; it is a safe and controlled environment. We specifically chose tools from web 2.0 that enable sharing and collaborative way of learning. Through understanding the characteristics of this learning environment, we believe that immersive learning along with other virtual tools can be integrated in today's pedagogical practices.

  4. Immersible solar heater for fluids

    DOEpatents

    Hazen, T.C.; Fliermans, C.B.

    1994-01-01

    An immersible solar heater is described comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater.

  5. Immersible solar heater for fluids

    DOEpatents

    Kronberg, J.W.

    1995-07-11

    An immersible solar heater is described comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater. 11 figs.

  6. Nanoimprint lithography using IR laser irradiation

    NASA Astrophysics Data System (ADS)

    Grigaliūnas, V.; Tamulevičius, S.; Muehlberger, M.; Jucius, D.; Guobienė, A.; Kopustinskas, V.; Gudonytė, A.

    2006-11-01

    A new technique called "infrared laser-assisted nanoimprint lithography" was utilised to soften the thermoplastic polymer material mR-I 8020 during nanoimprint lithography. A laser setup and a sample holder with pressure and temperature control were designed for the imprint experiments. The polymer was spin coated onto crystalline Si <1 1 1> substrates. A prepatterned Si <1 1 1> substrate, which is transparent for the CO 2 laser irradiation, was used as an imprint stamp as well. It was shown, that the thermoplastic resist mR-I 8020 could be successfully imprinted using the infrared CW CO 2 laser irradiation ( λ = 10.6 μm). The etching rate of the CO 2 laser beam irradiated mR-I 8020 resist film under O 2 RF (13.56 MHz) plasma treatment and during O 2 reactive ion beam etching was investigated as well.

  7. Synchrotron beamlines for x-ray lithography

    NASA Astrophysics Data System (ADS)

    Trippe, Anthony P.; Pearce, W. J.

    1994-02-01

    Louisiana State University established the J. Bennett Johnston, Sr., Center for Advanced Microstructures and Devices (CAMD). Designed and constructed by the Brobeck Division of Maxwell Laboratories, the CAMD synchrotron light source is the first electron storage ring to be built by a commercial company in the United States. The synchrotron x-ray radiation generated at CAMD is an extremely useful exposure source for both thin and thick film lithography. Passing through a beamline containing two plane mirrors, the synchrotron light is used to expose thin resists for lithography of patterns with feature sizes of 0.25 micron and smaller. Two thick-resist beamlines, one using a single aspheric (collimating) mirror and one using a plane mirror, provide the higher flux photons required for miniaturization in silicon to produce microscopic mechanical devices including gears, motors, filters, and valves.

  8. Optimization criteria for SRAM design: lithography contribution

    NASA Astrophysics Data System (ADS)

    Cole, Daniel C.; Bula, Orest; Conrad, Edward W.; Coops, Daniel S.; Leipold, William C.; Mann, Randy W.; Oppold, Jeffrey H.

    1999-07-01

    Here we discuss the use of well calibrated resist and etch bias models, in conjunction with a fast microlithography aerial image simulator, to predict and 'optimize' the printed shapes through all critical levels in a dense SRAM design. Our key emphasis here is on 'optimization criteria', namely, having achieved good predictability for printability with lithography models, how to use this capability in conjunction of best electrical performance, yield, and density. The key lithography/design optimization issues discussed here are: (1) tightening of gate width variation by reducing spatial curvature in the source and drain regions, (2) achieving sufficient contact areas, (3) maximizing process window for overlay, (4) reducing leakage mechanisms by reducing contributions of stress and strain due to the printed shape of oxide isolation regions, (5) examining topological differences in design during the optimization process, (6) accounting for mask corner rounding, and (7) designing for scalability to smaller dimensions to achieve optical design reusability issues without hardware.

  9. Combined overlay, focus and CD metrology for leading edge lithography

    NASA Astrophysics Data System (ADS)

    Ebert, Martin; Cramer, Hugo; Tel, Wim; Kubis, Michael; Megens, Henry

    2011-04-01

    As leading edge lithography moves to 22-nm design rules, low k1 technologies like double patterning are the new resolution enablers, and system control and setup are the new drivers to meet remarkably tight process requirements. The way of thinking and executing setup and control of lithography scanners is changing in four ways. First, unusually tight process tolerances call for very dense sampling [1], which in effect means measurements at high throughput combined with high order modeling and corrections to compensate for wafer spatial fingerprint. Second, complex interactions between scanner and process no longer allow separation of error sources through traditional metrology approaches, which are based on using one set of metrology tools and methods for setup and another for scanner performance control. Moreover, setup and control of overlay is done independently from CD uniformity, which in effect leads to independent and conflicting adjustments for the scanner. Third, traditional CD setup and control is based on the focus and dose calculated from their CD response and not from measurement of their effect on pattern profile, which allows a clean and orthogonal de-convolution of focus and dose variations across the wafer. Fourth, scanner setup and control has to take into consideration the final goal of lithography, which is the accurate printing of a complex pattern describing a real device layout. To this end we introduce a new setup and control metrology step: measuring-to-match scanner 1D and 2D proximity. In this paper we will describe the strategy for setup and control of overlay, focus, CD and proximity based on the YieldStarTM metrology tool and present the resulting performance. YieldStar-200 is a new, high throughput metrology tool based on a high numerical aperture scatterometer concept. The tool can be used stand-alone as well as integrated in a processing track. It is suitable for determining process offsets in X,Y and Z directions through Overlay

  10. Compact Imaging Spectrometer Utilizing Immersed Gratings

    DOEpatents

    Chrisp, Michael P.; Lerner, Scott A.; Kuzmenko, Paul J.; Bennett, Charles L.

    2006-03-21

    A compact imaging spectrometer with an immersive diffraction grating that compensates optical distortions. The imaging spectrometer comprises an entrance slit for transmitting light, a system for receiving the light and directing the light, an immersion grating, and a detector array. The entrance slit, the system for receiving the light, the immersion grating, and the detector array are positioned wherein the entrance slit transmits light to the system for receiving the light and the system for receiving the light directs the light to the immersion grating and the immersion grating receives the light and directs the light through an optical element to the detector array.

  11. Lysophosphatidic acid activates Arf6 to promote the mesenchymal malignancy of renal cancer

    PubMed Central

    Hashimoto, Shigeru; Mikami, Shuji; Sugino, Hirokazu; Yoshikawa, Ayumu; Hashimoto, Ari; Onodera, Yasuhito; Furukawa, Shotaro; Handa, Haruka; Oikawa, Tsukasa; Okada, Yasunori; Oya, Mototsugu; Sabe, Hisataka

    2016-01-01

    Acquisition of mesenchymal properties by cancer cells is critical for their malignant behaviour, but regulators of the mesenchymal molecular machinery and how it is activated remain elusive. Here we show that clear cell renal cell carcinomas (ccRCCs) frequently utilize the Arf6-based mesenchymal pathway to promote invasion and metastasis, similar to breast cancers. In breast cancer cells, ligand-activated receptor tyrosine kinases employ GEP100 to activate Arf6, which then recruits AMAP1; and AMAP1 then binds to the mesenchymal-specific protein EPB41L5, which promotes epithelial–mesenchymal transition and focal adhesion dynamics. In renal cancer cells, lysophosphatidic acid (LPA) activates Arf6 via its G-protein-coupled receptors, in which GTP-Gα12 binds to EFA6. The Arf6-based pathway may also contribute to drug resistance. Our results identify a specific mesenchymal molecular machinery of primary ccRCCs, which is triggered by a product of autotaxin and it is associated with poor outcome of patients. PMID:26854204

  12. Ultrastructural Localization of Endogenous Exchange Factor for ARF6 in Adrenocortical Cells In Situ of Mice

    PubMed Central

    Chomphoo, Surang; Mothong, Wilaiwan; Sawatpanich, Tarinee; Kanla, Pipatphong; Sakagami, Hiroyuki; Kondo, Hisatake; Hipkaeo, Wiphawi

    2016-01-01

    EFA6 (exchange factor for ARF6) activates Arf6 (ADP ribosylation factor 6) by exchanging ADP to ATP, and the resulting activated form of Arf6 is involved in the membrane dynamics and actin re-organization of cells. The present study was attempted to localize EFA6 type D (EFA6D) in mouse adrenocortical cells in situ whose steroid hormone secretion is generally considered not to depend on the vesicle-involved regulatory mechanism. In immunoblotting, an immunoreactive band with the same size as brain EFA6D was detected in homogenates of adrenal cortical tissues almost free of adrenal capsules and medulla. In immuno-light microscopy, EFA6D-immunoreactivity was positive in adrenocortical cells and it was often distinct along the plasmalemma, especially along portions of the cell columns facing the interstitium. In immuno-electron microscopy, the gold-labeling was more dense in the peripheral intracellular domains than the central domain of the immunopositive cells. The labeling was deposited on the plasma membranes in a discontinuous pattern and in cytoplasmic domains rich in filaments. It was also associated with some, but not all, of pleiomorphic vesicles and coated pits/vesicles. No labeling was seen in association with lipid droplets or smooth endoplasmic reticulum. The present finding is in support of the importance of EFA6D for activation of Arf6 in adrenocortical cells. PMID:27462133

  13. Ultrastructural Localization of Endogenous Exchange Factor for ARF6 in Adrenocortical Cells In Situ of Mice.

    PubMed

    Chomphoo, Surang; Mothong, Wilaiwan; Sawatpanich, Tarinee; Kanla, Pipatphong; Sakagami, Hiroyuki; Kondo, Hisatake; Hipkaeo, Wiphawi

    2016-06-28

    EFA6 (exchange factor for ARF6) activates Arf6 (ADP ribosylation factor 6) by exchanging ADP to ATP, and the resulting activated form of Arf6 is involved in the membrane dynamics and actin re-organization of cells. The present study was attempted to localize EFA6 type D (EFA6D) in mouse adrenocortical cells in situ whose steroid hormone secretion is generally considered not to depend on the vesicle-involved regulatory mechanism. In immunoblotting, an immunoreactive band with the same size as brain EFA6D was detected in homogenates of adrenal cortical tissues almost free of adrenal capsules and medulla. In immuno-light microscopy, EFA6D-immunoreactivity was positive in adrenocortical cells and it was often distinct along the plasmalemma, especially along portions of the cell columns facing the interstitium. In immuno-electron microscopy, the gold-labeling was more dense in the peripheral intracellular domains than the central domain of the immunopositive cells. The labeling was deposited on the plasma membranes in a discontinuous pattern and in cytoplasmic domains rich in filaments. It was also associated with some, but not all, of pleiomorphic vesicles and coated pits/vesicles. No labeling was seen in association with lipid droplets or smooth endoplasmic reticulum. The present finding is in support of the importance of EFA6D for activation of Arf6 in adrenocortical cells. PMID:27462133

  14. MUC1 oncoprotein suppresses activation of the ARF-MDM2-p53 pathway.

    PubMed

    Raina, Deepak; Ahmad, Rehan; Chen, Dongshu; Kumar, Shailendra; Kharbanda, Surender; Kufe, Donald

    2008-12-01

    The MUC1 oncoprotein interacts with the c-Abl tyrosine kinase and blocks nuclear targeting of c-Abl in the apoptotic response to DNA damage. Mutation of the MUC1 cytoplasmic domain at Tyr-60 disrupts the MUC1-c-Abl interaction. The present results demonstrate that the MUC1(Y60F) mutant is a potent inducer of the ARF tumor suppressor. MUC1(Y60F) induces transcription of the ARF locus by a c-Abl-dependent mechanism that promotes CUL-4A-mediated nuclear export of the replication protein Cdc6. The functional significance of these findings is that MUC1(Y60F)-induced ARF expression and thereby inhibition of MDM2 results in the upregulation of p53 and the homeodomain interacting protein kinase 2 (HIPK2) serine/threonine kinase. HIPK2-mediated phosphorylation of p53 on Ser-46 was further associated with a shift from expression of the cell cycle arrest-related p21 gene to the apoptosis-related PUMA gene. We also show that the MUC1(Y60F) mutant functions as dominant negative inhibitor of tumorigenicity. These findings indicate that the oncogenic function of MUC1 is conferred by suppressing activation of the ARF-MDM2-p53 pathway. PMID:18981727

  15. The Area Resource File (ARF). A Health Professions Planning and Research Tool.

    ERIC Educational Resources Information Center

    Applied Management Sciences, Inc., Silver Spring, MD.

    This report presents a description and sample products of the Area Resource File (ARF), a computer-based county-specific health resources information system which consolidates U.S. data on the health professions, hospital and nursing home facilities, hospital utilization levels, health professions training, hospital expenditures, Medicare…

  16. 20 CFR 228.16 - Adjustments in the age reduction factor (ARF).

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... RETIREMENT ACT COMPUTATION OF SURVIVOR ANNUITIES The Tier I Annuity Component § 228.16 Adjustments in the age reduction factor (ARF). Upon the attainment of retirement age, the previously-computed age reduction factor... 20 Employees' Benefits 1 2010-04-01 2010-04-01 false Adjustments in the age reduction factor...

  17. Lysophosphatidic acid activates Arf6 to promote the mesenchymal malignancy of renal cancer.

    PubMed

    Hashimoto, Shigeru; Mikami, Shuji; Sugino, Hirokazu; Yoshikawa, Ayumu; Hashimoto, Ari; Onodera, Yasuhito; Furukawa, Shotaro; Handa, Haruka; Oikawa, Tsukasa; Okada, Yasunori; Oya, Mototsugu; Sabe, Hisataka

    2016-01-01

    Acquisition of mesenchymal properties by cancer cells is critical for their malignant behaviour, but regulators of the mesenchymal molecular machinery and how it is activated remain elusive. Here we show that clear cell renal cell carcinomas (ccRCCs) frequently utilize the Arf6-based mesenchymal pathway to promote invasion and metastasis, similar to breast cancers. In breast cancer cells, ligand-activated receptor tyrosine kinases employ GEP100 to activate Arf6, which then recruits AMAP1; and AMAP1 then binds to the mesenchymal-specific protein EPB41L5, which promotes epithelial-mesenchymal transition and focal adhesion dynamics. In renal cancer cells, lysophosphatidic acid (LPA) activates Arf6 via its G-protein-coupled receptors, in which GTP-Gα12 binds to EFA6. The Arf6-based pathway may also contribute to drug resistance. Our results identify a specific mesenchymal molecular machinery of primary ccRCCs, which is triggered by a product of autotaxin and it is associated with poor outcome of patients. PMID:26854204

  18. ARF6 inhibition stabilizes the vasculature and enhances survival during endotoxic shock

    PubMed Central

    Davis, Chadwick T.; Zhu, Weiquan; Gibson, Christopher C.; Bowman-Kirigin, Jay; Sorensen, Lise; Ling, Jing; Sun, Huiming; Navankasattusas, Sutip; Li, Dean Y.

    2014-01-01

    The vascular endothelium responds to infection by destabilizing endothelial cell-cell junctions to allow fluid and cells to pass into peripheral tissues facilitating clearance of infection and tissue repair. During sepsis, endotoxin and other pro-inflammatory molecules induce excessive vascular leak, which can cause organ dysfunction, shock, and death. Current therapies for sepsis are limited to antibiotics and supportive care, which are often insufficient to reduce morbidity and prevent mortality. Previous attempts at blocking inflammatory cytokine responses in humans have proven ineffective at reducing the pathologies associated with sepsis, thus highlighting the need for a new therapeutic strategy. The small GTPase ARF6 is activated by a MYD88-ARNO interaction to induce vascular leak through disruption of endothelial adherens junctions. Here we show that the MYD88-ARNO-ARF6 signaling axis is responsible for lipopolysaccharide (LPS)-induced endothelial permeability and is a destabilizing convergence point utilized by multiple inflammatory cues. We also show that blocking ARF6 with a peptide construct of its N-terminus is sufficient to reduce vascular leak and enhance survival during endotoxic shock without inhibiting host cytokine response. Our data highlight the therapeutic potential of blocking ARF6 and reducing vascular leak for the treatment of inflammatory conditions such as endotoxemia. PMID:24835390

  19. The clathrin adaptor AP-1 complex and Arf1 regulate planar cell polarity in vivo

    PubMed Central

    Mendoza, Meg; Dussert, Aurore; Collu, Giovanna; Roman, Angel-Carlos; Weber, Ursula; Ciruna, Brian; Mlodzik, Marek

    2015-01-01

    A key step in generating planar cell polarity (PCP) is the formation of restricted junctional domains containing Frizzled/Dishevelled/Diego (Fz/Dsh/Dgo) or Van Gogh/Prickle (Vang/Pk) complexes within the same cell, stabilized via Flamingo (Fmi) across cell membranes. Although models have been proposed for how these complexes acquire and maintain their polarized localization, the machinery involved in moving core PCP proteins around cells remains unknown. We describe the AP-1 adaptor complex and Arf1 as major regulators of PCP protein trafficking in vivo. AP-1 and Arf1 disruption affects the accumulation of Fz/Fmi and Vang/Fmi complexes in the proximo–distal axis, producing severe PCP phenotypes. Using novel tools, we demonstrate a direct and specific Arf1 involvement in Fz trafficking in vivo. Moreover, we uncover a conserved Arf1 PCP function in vertebrates. Our data support a model whereby the trafficking machinery plays an important part during PCP establishment, promoting formation of polarized PCP-core complexes in vivo. PMID:25849195

  20. The Arf family G protein Arl1 is required for secretory granule biogenesis in Drosophila

    PubMed Central

    Torres, Isabel L.; Rosa-Ferreira, Cláudia; Munro, Sean

    2014-01-01

    ABSTRACT The small G protein Arf like 1 (Arl1) is found at the Golgi complex, and its GTP-bound form recruits several effectors to the Golgi including GRIP-domain-containing coiled-coil proteins, and the Arf1 exchange factors Big1 and Big2. To investigate the role of Arl1, we have characterised a loss-of-function mutant of the Drosophila Arl1 orthologue. The gene is essential, and examination of clones of cells lacking Arl1 shows that it is required for recruitment of three of the four GRIP domain golgins to the Golgi, with Drosophila GCC185 being less dependent on Arl1. At a functional level, Arl1 is essential for formation of secretory granules in the larval salivary gland. When Arl1 is missing, Golgi are still present but there is a dispersal of adaptor protein 1 (AP-1), a clathrin adaptor that requires Arf1 for its membrane recruitment and which is known to be required for secretory granule biogenesis. Arl1 does not appear to be required for AP-1 recruitment in all tissues, suggesting that it is crucially required to enhance Arf1 activation at the trans-Golgi in particular tissues. PMID:24610947

  1. The ARF-like 2 (ARL2)-binding protein, BART. Purification, cloning, and initial characterization.

    PubMed

    Sharer, J D; Kahn, R A

    1999-09-24

    ARF-like proteins (ARLs) comprise a functionally distinct group of incompletely characterized members in the ARF family of RAS-related GTPases. We took advantage of the GTP binding characteristics of human ARL2 to develop a specific, high affinity binding assay that allowed the purification of a novel ARL2-binding protein. A 19-kDa protein (BART, Binder of Arl Two) was identified and purified from bovine brain homogenate. BART binding is specific to ARL2.GTP with high affinity but does not interact with ARL2.GDP or activated ARF or RHO proteins. Based on peptide sequences of purified bovine BART, the human cDNA sequence was determined. The 489-base pair BART open reading frame encodes a novel 163-amino acid protein with a predicted molecular mass of 18,822 Da. Recombinant BART was found to bind ARL2.GTP in a manner indistinguishable from native BART. Northern and Western analyses indicated BART is expressed in all tissues sampled. The lack of detectable membrane association of ARL2 or BART upon activation of ARL2 is suggestive of actions quite distinct from those of the ARFs. The lack of ARL2 GTPase-activating protein activity in BART led us to conclude that the specific interaction with ARL2.GTP is most consistent with BART being the first identified ARL2-specific effector. PMID:10488091

  2. Rab, Arf, and Arl-Regulated Membrane Traffic in Cortical Neuron Migration.

    PubMed

    Tang, Bor Luen

    2016-07-01

    The migration of projection neurons from its birthplace in the subventricular zone to their final destination in the cortical plate is a complex process that requires a series of highly coordinated cellular events. Amongst the key factors involved in the processes are modulators of cytoskeletal dynamics, as well as cellular membrane traffic. Members of the small GTPases family responsible for the latter process, the Rabs and Arfs, have been recently implicated in cortical neuron migration. Rab5 and Rab11, which are key modulators of endocytosis and endocytic recycling respectively, ensure proper surface expression and distribution of N-cadherin, a key adhesion protein that tethers migrating neurons to the radial glia fiber tracts during pia-directed migration. Rab7, which is associated with lysosomal biogenesis and function, is important for the final step of terminal translocation when N-cadherin is downregulated by lysosomal degradation. Arf6 activity, which is known to be important in neuronal processes outgrowth, may negatively impact the multipolar-bipolar transition of cortical neurons undergoing radial migration, but the downstream effector of Arf6 in this regard is not yet known. In addition to the above, members of the Arl family which have been recently shown to be important in radial glia scaffold formation, would also be important for cortical neuron migration. In this short review, we discuss recent advances in our understanding of the importance of membrane traffic regulated by the Rab, Arf, and Arl family members in cortical neuron migration. PMID:26587959

  3. Formation of Magnetic Anisotropy by Lithography.

    PubMed

    Kim, Si Nyeon; Nam, Yoon Jae; Kim, Yang Doo; Choi, Jun Woo; Lee, Heon; Lim, Sang Ho

    2016-01-01

    Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2-0.3 erg/cm(2) for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures. PMID:27216420

  4. Formation of Magnetic Anisotropy by Lithography

    PubMed Central

    Kim, Si Nyeon; Nam, Yoon Jae; Kim, Yang Doo; Choi, Jun Woo; Lee, Heon; Lim, Sang Ho

    2016-01-01

    Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2–0.3 erg/cm2 for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures. PMID:27216420

  5. Metallic resist for phase-change lithography

    PubMed Central

    Zeng, Bi Jian; Huang, Jun Zhu; Ni, Ri Wen; Yu, Nian Nian; Wei, Wei; Hu, Yang Zhi; Li, Zhen; Miao, Xiang Shui

    2014-01-01

    Currently, the most widely used photoresists in optical lithography are organic-based resists. The major limitations of such resists include the photon accumulation severely affects the quality of photolithography patterns and the size of the pattern is constrained by the diffraction limit. Phase-change lithography, which uses semiconductor-based resists such as chalcogenide Ge2Sb2Te5 films, was developed to overcome these limitations. Here, instead of chalcogenide, we propose a metallic resist composed of Mg58Cu29Y13 alloy films, which exhibits a considerable difference in etching rate between amorphous and crystalline states. Furthermore, the heat distribution in Mg58Cu29Y13 thin film is better and can be more easily controlled than that in Ge2Sb2Te5 during exposure. We succeeded in fabricating both continuous and discrete patterns on Mg58Cu29Y13 thin films via laser irradiation and wet etching. Our results demonstrate that a metallic resist of Mg58Cu29Y13 is suitable for phase change lithography, and this type of resist has potential due to its outstanding characteristics. PMID:24931505

  6. REBL nanowriter: Reflective Electron Beam Lithography

    NASA Astrophysics Data System (ADS)

    Petric, Paul; Bevis, Chris; Brodie, Alan; Carroll, Allen; Cheung, Anthony; Grella, Luca; McCord, Mark; Percy, Henry; Standiford, Keith; Zywno, Marek

    2009-03-01

    REBL (Reflective Electron Beam Lithography) is being developed for high throughput electron beam direct write maskless lithography. The system is specifically targeting 5 to 7 wafer levels per hour throughput on average at the 45 nm node, with extendibility to the 32 nm node and beyond. REBL incorporates a number of novel technologies to generate and expose lithographic patterns at estimated throughputs considerably higher than electron beam lithography has been able to achieve as yet. A patented reflective electron optic concept enables the unique approach utilized for the Digital Pattern Generator (DPG). The DPG is a CMOS ASIC chip with an array of small, independently controllable cells or pixels, which act as an array of electron mirrors. In this way, the system is capable of generating the pattern to be written using massively parallel exposure by ~1 million beams at extremely high data rates (~ 1Tbps). A rotary stage concept using a rotating platen carrying multiple wafers optimizes the writing strategy of the DPG to achieve the capability of high throughput for sparse pattern wafer levels. The exposure method utilized by the DPG was emulated on a Vistec VB-6 in order to validate the gray level exposure method used in REBL. Results of these exposure tests are discussed.

  7. Hard-tip, soft-spring lithography.

    PubMed

    Shim, Wooyoung; Braunschweig, Adam B; Liao, Xing; Chai, Jinan; Lim, Jong Kuk; Zheng, Gengfeng; Mirkin, Chad A

    2011-01-27

    Nanofabrication strategies are becoming increasingly expensive and equipment-intensive, and consequently less accessible to researchers. As an alternative, scanning probe lithography has become a popular means of preparing nanoscale structures, in part owing to its relatively low cost and high resolution, and a registration accuracy that exceeds most existing technologies. However, increasing the throughput of cantilever-based scanning probe systems while maintaining their resolution and registration advantages has from the outset been a significant challenge. Even with impressive recent advances in cantilever array design, such arrays tend to be highly specialized for a given application, expensive, and often difficult to implement. It is therefore difficult to imagine commercially viable production methods based on scanning probe systems that rely on conventional cantilevers. Here we describe a low-cost and scalable cantilever-free tip-based nanopatterning method that uses an array of hard silicon tips mounted onto an elastomeric backing. This method-which we term hard-tip, soft-spring lithography-overcomes the throughput problems of cantilever-based scanning probe systems and the resolution limits imposed by the use of elastomeric stamps and tips: it is capable of delivering materials or energy to a surface to create arbitrary patterns of features with sub-50-nm resolution over centimetre-scale areas. We argue that hard-tip, soft-spring lithography is a versatile nanolithography strategy that should be widely adopted by academic and industrial researchers for rapid prototyping applications. PMID:21270890

  8. Metallic resist for phase-change lithography.

    PubMed

    Zeng, Bi Jian; Huang, Jun Zhu; Ni, Ri Wen; Yu, Nian Nian; Wei, Wei; Hu, Yang Zhi; Li, Zhen; Miao, Xiang Shui

    2014-01-01

    Currently, the most widely used photoresists in optical lithography are organic-based resists. The major limitations of such resists include the photon accumulation severely affects the quality of photolithography patterns and the size of the pattern is constrained by the diffraction limit. Phase-change lithography, which uses semiconductor-based resists such as chalcogenide Ge₂Sb₂Te₅ films, was developed to overcome these limitations. Here, instead of chalcogenide, we propose a metallic resist composed of Mg₅₈Cu₂₉Y₁₃ alloy films, which exhibits a considerable difference in etching rate between amorphous and crystalline states. Furthermore, the heat distribution in Mg₅₈Cu₂₉Y₁₃ thin film is better and can be more easily controlled than that in Ge₂Sb₂Te₅ during exposure. We succeeded in fabricating both continuous and discrete patterns on Mg₅₈Cu₂₉Y₁₃ thin films via laser irradiation and wet etching. Our results demonstrate that a metallic resist of Mg₅₈Cu₂₉Y₁₃ is suitable for phase change lithography, and this type of resist has potential due to its outstanding characteristics. PMID:24931505

  9. Advanced lithography for micro-optics

    NASA Astrophysics Data System (ADS)

    Zeitner, U. D.; Kley, E.-B.

    2006-08-01

    Since the beginning of micro-optics fabrication most of the used technologies have been adapted from or are related to semiconductor fabrication techniques. These are widely known and the special microelectronics fabrication tools, especially lithography machines, are available at numerous places. Besides the fact that therefore micro-optics was able to took advantage of the steady development of semiconductor technology this tight linkage has also a lot of drawbacks. The adaptation of element properties to the fabrication limits given by the available technologies is very often connected with compromises in optical performance. In nowadays micro-optics fabrication has reached a level which justifies the development of fabrication tools specialized to its own demands. In the article the special demands of optical microstructures on the fabrication technologies are discussed and newly developed mico-optics fabrication tools are introduced. The first one is an electron-beam lithography machine for use with up substrates up to 300mm large and 15mm thick achieving a very high overlay accuracy and writing speed. The second one is a laser-lithography system capable to expose micro-optical structures onto non-planar substrates.

  10. Which Way In? The RalF Arf-GEF Orchestrates Rickettsia Host Cell Invasion

    PubMed Central

    Rennoll-Bankert, Kristen E.; Rahman, M. Sayeedur; Gillespie, Joseph J.; Guillotte, Mark L.; Kaur, Simran J.; Lehman, Stephanie S.; Beier-Sexton, Magda; Azad, Abdu F.

    2015-01-01

    Bacterial Sec7-domain-containing proteins (RalF) are known only from species of Legionella and Rickettsia, which have facultative and obligate intracellular lifestyles, respectively. L. pneumophila RalF, a type IV secretion system (T4SS) effector, is a guanine nucleotide exchange factor (GEF) of ADP-ribosylation factors (Arfs), activating and recruiting host Arf1 to the Legionella-containing vacuole. In contrast, previous in vitro studies showed R. prowazekii (Typhus Group) RalF is a functional Arf-GEF that localizes to the host plasma membrane and interacts with the actin cytoskeleton via a unique C-terminal domain. As RalF is differentially encoded across Rickettsia species (e.g., pseudogenized in all Spotted Fever Group species), it may function in lineage-specific biology and pathogenicity. Herein, we demonstrate RalF of R. typhi (Typhus Group) interacts with the Rickettsia T4SS coupling protein (RvhD4) via its proximal C-terminal sequence. RalF is expressed early during infection, with its inactivation via antibody blocking significantly reducing R. typhi host cell invasion. For R. typhi and R. felis (Transitional Group), RalF ectopic expression revealed subcellular localization with the host plasma membrane and actin cytoskeleton. Remarkably, R. bellii (Ancestral Group) RalF showed perinuclear localization reminiscent of ectopically expressed Legionella RalF, for which it shares several structural features. For R. typhi, RalF co-localization with Arf6 and PI(4,5)P2 at entry foci on the host plasma membrane was determined to be critical for invasion. Thus, we propose recruitment of PI(4,5)P2 at entry foci, mediated by RalF activation of Arf6, initiates actin remodeling and ultimately facilitates bacterial invasion. Collectively, our characterization of RalF as an invasin suggests that, despite carrying a similar Arf-GEF unknown from other bacteria, different intracellular lifestyles across Rickettsia and Legionella species have driven divergent roles for Ral

  11. Disruption of the ARF transcriptional activator DMP1 facilitates cell immortalization, Ras transformation, and tumorigenesis

    PubMed Central

    Inoue, Kazushi; Wen, Renren; Rehg, Jerold E.; Adachi, Masashi; Cleveland, John L.; Roussel, Martine F.; Sherr, Charles J.

    2000-01-01

    The DMP1 transcription factor induces the ARF tumor suppressor gene in mouse fibroblasts, leading to cell cycle arrest in a p53-dependent manner. We disrupted sequences encoding the DNA-binding domain of DMP1 in mouse embryonic stem cells and derived animals lacking the functional protein. DMP1-null animals are small at birth, and males develop more slowly than their wild-type littermates. Some adult animals exhibit seizures and/or obstuctive uropathy, each of unknown cause. The growth of explanted DMP1-null mouse embryo fibroblasts (MEFs) is progressively retarded as cells are passaged in culture on defined transfer protocols; but, unlike the behavior of normal cells, p19ARF, Mdm2, and p53 levels remain relatively low and DMP1-null MEFs do not senesce. Whereas the establishment of cell lines from MEFs is usually always accompanied by either p53 or ARF loss of function, continuously passaged DMP1-null cells readily give rise to established 3T3 and 3T9 cell lines that retain wild-type ARF and functional p53 genes. Early-passage DMP1-null cells, like MEFs from either ARF-null or p53-null mice, can be morphologically transformed by oncogenic Ha-Ras (Val-12) alone. Splenic lymphocytes harvested from both DMP1-null and ARF-null mice exhibit enhanced proliferative responses in long-term cultures when stimulated to divide with antibody to CD3 and interleukin-2. Although only 1 of 40 DMP1-null animals spontaneously developed a tumor in the first year of life, neonatal treatment with dimethylbenzanthracene or ionizing radiation induced tumors of various histologic types that were not observed in similarly treated DMP1+/+ animals. Karyotypic analyses of MEFs and lymphomas from DMP1-null animals revealed pseudodiploid chromosome numbers, consistent with the retention of wild-type p53. Together, these data suggest that ARF function is compromised, but not eliminated, in animals lacking functional DMP1. PMID:10898794

  12. A secreted peptide acts on BIN2-mediated phosphorylation of ARFs to potentiate auxin response during lateral root development.

    PubMed

    Cho, Hyunwoo; Ryu, Hojin; Rho, Sangchul; Hill, Kristine; Smith, Stephanie; Audenaert, Dominique; Park, Joonghyuk; Han, Soeun; Beeckman, Tom; Bennett, Malcolm J; Hwang, Daehee; De Smet, Ive; Hwang, Ildoo

    2014-01-01

    The phytohormone auxin is a key developmental signal in plants. So far, only auxin perception has been described to trigger the release of transcription factors termed Auxin Response Factors (ARFs) from their auxin/indole-3-acetic acid (AUX/IAA) repressor proteins. Here, we show that phosphorylation of ARF7 and ARF19 by BRASSINOSTEROID-insensitive2 (BIN2) can also potentiate auxin signalling output during lateral root organogenesis. BIN2-mediated phosphorylation of ARF7 and ARF19 suppresses their interaction with AUX/IAAs, and subsequently enhances the transcriptional activity to their target genes lateral organ boundaries-domain16 (LBD16) and LBD29. In this context, BIN2 is under the control of the Tracheary element differentiation inhibitory factor (TDIF)-TDIF receptor (TDR) module. TDIF-initiated TDR signalling directly acts on BIN2-mediated ARF phosphorylation, leading to the regulation of auxin signalling during lateral root development. In summary, this study delineates a TDIF-TDR-BIN2 signalling cascade that controls regulation of ARF and AUX/IAA interaction independent of auxin perception during lateral root development. PMID:24362628

  13. A novel proapoptotic gene PANO encodes a post-translational modulator of the tumor suppressor p14ARF

    SciTech Connect

    Watari, Akihiro; Li, Yang; Higashiyama, Shinji; Yutsudo, Masuo

    2012-02-01

    The protein p14ARF is a known tumor suppressor protein controlling cell proliferation and survival, which mainly localizes in nucleoli. However, the regulatory mechanisms that govern its activity or expression remain unclear. Here, we report that a novel proapoptotic nucleolar protein, PANO, modulates the expression and activity of p14ARF in HeLa cells. Overexpression of PANO enhances the stability of p14ARF protein by protecting it from degradation, resulting in an increase in p14ARF expression levels. Overexpression of PANO also induces apoptosis under low serum conditions. This effect is dependent on the nucleolar localization of PANO and inhibited by knocking-down p14ARF. Alternatively, PANO siRNA treated cells exhibit a reduction in p14ARF protein levels. In addition, ectopic expression of PANO suppresses the tumorigenicity of HeLa cells in nude mice. These results indicate that PANO is a new apoptosis-inducing gene by modulating the tumor suppressor protein, p14ARF, and may itself be a new candidate tumor suppressor gene.

  14. Activation-Inactivation Cycling of Rab35 and ARF6 Is Required for Phagocytosis of Zymosan in RAW264 Macrophages

    PubMed Central

    Egami, Youhei; Fujii, Makoto; Kawai, Katsuhisa; Ishikawa, Yurie; Fukuda, Mitsunori; Araki, Nobukazu

    2015-01-01

    Phagocytosis of zymosan by phagocytes is a widely used model of microbial recognition by the innate immune system. Live-cell imaging showed that fluorescent protein-fused Rab35 accumulated in the membranes of phagocytic cups and then dissociated from the membranes of newly formed phagosomes. By our novel pull-down assay for Rab35 activity, we found that Rab35 is deactivated immediately after zymosan internalization into the cells. Phagosome formation was inhibited in cells expressing the GDP- or GTP-locked Rab35 mutant. Moreover, the simultaneous expression of ACAP2—a Rab35 effector protein—with GTP-locked Rab35 or the expression of plasma membrane-targeted ACAP2 showed a marked inhibitory effect on phagocytosis through ARF6 inactivation by the GAP activity of ACAP2. ARF6, a substrate for ACAP2, was also localized on the phagocytic cups and dissociated from the membranes of internalized phagosomes. In support of the microscopic observations, ARF6-GTP pull-down experiments showed that ARF6 is transiently activated during phagosome formation. Furthermore, the expression of GDP- or GTP-locked ARF6 mutants also suppresses the uptake of zymosan. These data suggest that the activation-inactivation cycles of Rab35 and ARF6 are required for the uptake of zymosan and that ACAP2 is an important component that links Rab35/ARF6 signaling during phagocytosis of zymosan. PMID:26229970

  15. High frequency of p53/MDM2/p14ARF pathway abnormalities in relapsed neuroblastoma

    PubMed Central

    Carr-Wilkinson, Jane; O' Toole, Kieran; Wood, Katrina M.; Challen, Christine C.; Baker, Angela G.; Board, Julian R.; Evans, Laura; Cole, Michael; Cheung, Nai-Kong V.; Boos, Joachim; Köhler, Gabriele; Leuschner, Ivo; Pearson, Andrew D.J.; Lunec, John; Tweddle, Deborah A.

    2010-01-01

    Purpose: Most neuroblastomas initially respond to therapy but many relapse with chemoresistant disease. p53 mutations are rare in diagnostic neuroblastomas, but we have previously reported inactivation of the p53/MDM2/p14ARF pathway in 9/17 (53%) neuroblastoma cell lines established at relapse. Hypothesis: Inactivation of the p53/MDM2/p14ARF pathway develops during treatment and contributes to neuroblastoma relapse. Methods: Eighty-four neuroblastomas were studied from 41 patients with relapsed neuroblastoma including 38 paired neuroblastomas at different stages of therapy. p53 mutations were detected by automated sequencing, p14ARF methylation and deletion by methylation-specific PCR and duplex PCR respectively, and MDM2 amplification by fluorescent in-situ hybridisation. Results: Abnormalities in the p53 pathway were identified in 20/41(49%) cases. Downstream defects due to inactivating missense p53 mutations were identified in 6/41 (15%) cases, 5 following chemotherapy and/or at relapse and 1 at diagnosis, post chemotherapy and relapse. The presence of a p53 mutation was independently prognostic for overall survival (hazard ratio 3.4, 95% confidence interval 1.2, 9.9; p = 0.02). Upstream defects were present in 35% cases: MDM2 amplification in 3 cases, all at diagnosis & relapse and p14ARF inactivation in 12/41 (29%) cases: 3 had p14ARF methylation, 2 after chemotherapy, and 9 had homozygous deletions, 8 at diagnosis and relapse. Conclusions: These results show that a high proportion of neuroblastomas which relapse have an abnormality in the p53 pathway. The majority have upstream defects suggesting that agents which reactivate wild-type p53 would be beneficial, in contrast to those with downstream defects where p53 independent therapies are indicated. PMID:20145180

  16. Immersive Earth: Teaching Earth and Space with inexpensive immersive technology

    NASA Astrophysics Data System (ADS)

    Reiff, P. H.; Sumners, C.; Law, C. C.; Handron, K.

    2003-12-01

    In 1995 we pioneered "Space Update", the Digital Library for the rest of us", software that was so simple that a child could use it without a keyboard and yet would allow one-click updating of the daily earth and space science images without the dangers of having an open web browser on display. Thanks to NASA support, it allowed museums and schools to have a powerful exhibit for a tiny price. Over 40,000 disks in our series have been distributed so far to educators and the public. In 2003, with our partners we are again revolutionizing educational technology with a low-cost hardware and software solution to creating and displaying immersive content. Recently selected for funding as part of the REASoN competition, Immersive Earth is a partnership of scientists, museums, educators, and content providers. The hardware consists of a modest projector with a special fisheye lens to be used in an inflatable dome which many schools already have. This, coupled with a modest personal computer, can now easily project images and movies of earth and space, allows training students in 3-D content at a tiny fraction of the cost of a cave or fullscale dome theater. Another low-cost solution is the "Imove" system, where spherical movies can play on a personal computer, with the user changing the viewing direction with a joystick. We were the first to create immersive earth science shows, remain the leader in creating educational content that people want to see. We encourage people with "allsky" images or movies to bring it and see what it looks like inside a dome! Your content could be in our next show!

  17. A mask manufacturer's perspective on maskless lithography

    NASA Astrophysics Data System (ADS)

    Buck, Peter; Biechler, Charles; Kalk, Franklin

    2005-11-01

    Maskless Lithography (ML2) is again being considered for use in mainstream CMOS IC manufacturing. Sessions at technical conferences are being devoted to ML2. A multitude of new companies have been formed in the last several years to apply new concepts to breaking the throughput barrier that has in the past prevented ML2 from achieving the cost and cycle time performance necessary to become economically viable, except in rare cases. Has Maskless Lithography's (we used to call it "Direct Write Lithography") time really come? If so, what is the expected impact on the mask manufacturer and does it matter? The lithography tools used today in mask manufacturing are similar in concept to ML2 except for scale, both in throughput and feature size. These mask tools produce highly accurate lithographic images directly from electronic pattern files, perform multi-layer overlay, and mix-n-match across multiple tools, tool types and sites. Mask manufacturers are already accustomed to the ultimate low volume - one substrate per design layer. In order to achieve the economically required throughput, proposed ML2 systems eliminate or greatly reduce some of the functions that are the source of the mask writer's accuracy. Can these ML2 systems meet the demanding lithographic requirements without these functions? ML2 may eliminate the reticle but many of the processes and procedures performed today by the mask manufacturer are still required. Examples include the increasingly complex mask data preparation step and the verification performed to ensure that the pattern on the reticle is accurately representing the design intent. The error sources that are fixed on a reticle are variable with time on an ML2 system. It has been proposed that if ML2 is successful it will become uneconomical to be in the mask business - that ML2, by taking the high profit masks will take all profitability out of mask manufacturing and thereby endanger the entire semiconductor industry. Others suggest that a

  18. Intrinsically Unstructured Domains of Arf and Hdm2 Form Bi-molecular Oligomeric Structures In Vitro and In Vivo

    PubMed Central

    Sivakolundu, Sivashankar G.; Nourse, Amanda; Moshiach, Simon; Bothner, Brian; Ashley, Chimere; Satumba, John; Lahti, Jill; Kriwacki, Richard W.

    2008-01-01

    Summary Arf, Hdm2 and p53 regulate the tumor suppressor pathway that is most frequently disrupted in human cancer. In the absence of tumorigenic stress, Hdm2 actively attenuates p53-dependent cell cycle arrest and apoptosis by mediating ubiquitination-dependent degradation of p53. Mitogenic stress activates Arf, which indirectly activates p53 by binding to and nullifying the anti-p53 activities of Hdm2. Small, conserved domains within Arf and Hdm2 mediate their direct interaction. Individually, these domains are intrinsically unstructured and, when combined in vitro, they co-fold into bi-molecular oligomeric structures that, in some features, resemble amyloid fibrils. Detailed structural characterization of Arf/Hdm2 complexes has previously been hampered by their heterogeneity and large size. Here, we report that a 9-residue fragment of the N-terminus of mouse Arf (termed A1-mini) co-folds specifically with the Arf-binding domain of Hdm2 to form bi-molecular oligomers. We characterized these unprecedented structures using analytical ultracentrifugation and NMR spectroscopy, providing insights into their structural organization. The A1-mini peptide not only binds specifically to Hdm2 in vitro, but also recapitulates the nucleolar localization features of full-length Arf in cells. Further, larger fragments of Arf that contain the A1-mini segment have previously been shown to activate p53 in mouse and human cells. Our studies provide the first insights into the molecular basis through which Arf nullifies the p53-inhibiting activity of Hdm2, indirectly activating the tumor suppressor function of p53 in mammalian cells. PMID:18809412

  19. Deep-UV interference lithography combined with masked contact lithography for pixel wiregrid patterns

    NASA Astrophysics Data System (ADS)

    Lombardo, David; Shah, Piyush; Guo, Pengfei; Sarangan, Andrew

    2016-04-01

    Pixelated wiregrids are of great interest in polarimetric imagers, but there are no straightforward methods available for combining the uniform exposures of laser interference with a masking system to achieve pixels at different rotational angles. In this work we demonstrate a 266nm deep-UV interference lithography combined with a traditional i-line contact lithography to create such pixels. Aluminum wiregrids are first made, following by etching to create the pixels, and then a planarizing molybdenum film is used before patterning subsequent pixel arrays. The etch contrast between the molybdenum and the aluminum enables the release of the planarizing layer.

  20. 3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography.

    PubMed

    Ulmeanu, M; Grubb, M P; Jipa, F; Quignon, B; Ashfold, M N R

    2015-06-01

    We report a comprehensive study of laser-initiated, liquid-assisted colloidal (LILAC) lithography, and illustrate its utility in patterning silicon substrates. The method combines single shot laser irradiation (frequency doubled Ti-sapphire laser, 50fs pulse duration, 400nm wavelength) and medium-tuned optical near-field effects around arrays of silica colloidal particles to achieve 3-D surface patterning of silicon. A monolayer (or multilayers) of hexagonal close packed silica colloidal particles act as a mask and offer a route to liquid-tuned optical near field enhancement effects. The resulting patterns are shown to depend on the difference in refractive index of the colloidal particles (ncolloid) and the liquid (nliquid) in which they are immersed. Two different topographies are demonstrated experimentally: (a) arrays of bumps, centred beneath the original colloidal particles, when using liquids with nliquidncolloid - and explained with the aid of complementary Mie scattering simulations. The LILAC lithography technique has potential for rapid, large area, organized 3-D patterning of silicon (and related) substrates. PMID:25465198

  1. CD bias reduction in CD-SEM linewidth measurements for advanced lithography

    NASA Astrophysics Data System (ADS)

    Tanaka, Maki; Meessen, Jeroen; Shishido, Chie; Watanabe, Kenji; Minnaert-Janssen, Ingrid; Vanoppen, Peter

    2008-03-01

    The linewidth measurement capability of the model-based library (MBL) matching technique was evaluated experimentally. This technique estimates the dimensions and shape of a target pattern by comparing a measured SEM image profile to a library of simulated line scans. The simulation model uses a non-linear least squares method to estimate pattern geometry parameters. To examine the application of MBL matching in an advanced lithography process, a focus-exposure matrix wafer was prepared with a leading-edge immersion lithography tool. The evaluation used 36 sites with target structures having various linewidths from 45 to 200 nm. The measurement accuracy was evaluated by using an atomic force microscope (AFM) as a reference measurement system. The results of a first trial indicated that two or more solutions could exist in the parameter space in MBL matching. To solve this problem, we obtained a rough estimation of the scale parameter in SEM imaging, based on experimental results, in order to add a constraint in the matching process. As a result, the sensitivity to sidewall variation in MBL matching was improved, and the measurement bias was reduced from 22.1 to 16 nm. These results indicate the possibility of improving the CD measurement capability by applying this tool parameter appropriately.

  2. 75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-27

    ... COMMISSION Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing... importation of certain semiconductor products made by advanced lithography techniques and products containing... certain semiconductor products made by advanced lithography techniques or products containing same...

  3. Canoeists' disorientation following cold immersion

    PubMed Central

    Baker, S.; Atha, J.

    1981-01-01

    As an initial step to a broader study of the disorientating effects of cold water immersions on top class competitive canoeists a survey was made of the incidence of hazardous immersions amongst a majority sample of the better canoeists in the country. Virtually the entire entry to one of the most important national competitive meets was canvassed. A total of 288 canoeists in the 1st and 2nd divisions were identified and asked to participate. Replies were received from 247 (86%). All those responding had had extensive experience of canoeing in winter spate and were capable of fast and efficient first-time canoe rolls in cases of capsize. Particular interest was focussed on the 85 (34%) who had experienced at least one capsize in cold water during training or competition in mid-winter. Respondents viewed the winter capsize seriously. Despite their familiarity with the conditions in which they trained all 85, recalling their capsize experiences, reported being concerned, most (79%) only modestly so, but a significant proportion (21%) confessed to feelings of extreme alarm. A number of marked physical symptoms that regularly attend on a capsize were widely reported, the most usual of which was severe pain in the forehead (89%) and breathing and speaking difficulties when afloat (64%). Additionally 62% reported sensory problems including visual difficulties, dizziness and disorientation. Five canoeists admitted fainting. Despite these hazards few preventive measures were taken and clothing with negligible thermal insulation properties was commonly worn. It is concluded that transient cold immersions can be disturbing, and can disorientate the canoeist, but that although conscious of this and to his own potentially high cost, he takes little notice of it in his desire to compete successfully. Imagesp111-ap111-bp112-ap113-ap114-a PMID:7272652

  4. Cancer cell specific cytotoxic gene expression mediated by ARF tumor suppressor promoter constructs

    SciTech Connect

    Kurayoshi, Kenta; Ozono, Eiko; Iwanaga, Ritsuko; Bradford, Andrew P.; Komori, Hideyuki; Ohtani, Kiyoshi

    2014-07-18

    Highlights: • ARF promoter showed higher responsiveness to deregulated E2F activity than the E2F1 promoter. • ARF promoter showed higher cancer cell-specificity than E2F1 promoter to drive gene expression. • HSV-TK driven by ARF promoter showed higher cancer cell-specific cytotoxicity than that driven by E2F1 promoter. - Abstract: In current cancer treatment protocols, such as radiation and chemotherapy, side effects on normal cells are major obstacles to radical therapy. To avoid these side effects, a cancer cell-specific approach is needed. One way to specifically target cancer cells is to utilize a cancer specific promoter to express a cytotoxic gene (suicide gene therapy) or a viral gene required for viral replication (oncolytic virotherapy). For this purpose, the selected promoter should have minimal activity in normal cells to avoid side effects, and high activity in a wide variety of cancers to obtain optimal therapeutic efficacy. In contrast to the AFP, CEA and PSA promoters, which have high activity only in a limited spectrum of tumors, the E2F1 promoter exhibits high activity in wide variety of cancers. This is based on the mechanism of carcinogenesis. Defects in the RB pathway and activation of the transcription factor E2F, the main target of the RB pathway, are observed in almost all cancers. Consequently, the E2F1 promoter, which is mainly regulated by E2F, has high activity in wide variety of cancers. However, E2F is also activated by growth stimulation in normal growing cells, suggesting that the E2F1 promoter may also be highly active in normal growing cells. In contrast, we found that the tumor suppressor ARF promoter is activated by deregulated E2F activity, induced by forced inactivation of pRB, but does not respond to physiological E2F activity induced by growth stimulation. We also found that the deregulated E2F activity, which activates the ARF promoter, is detected only in cancer cell lines. These observations suggest that ARF promoter

  5. Gestural interfaces for immersive environments

    NASA Astrophysics Data System (ADS)

    Margolis, Todd

    2014-02-01

    We are witnessing an explosion of new forms of Human Computer Interaction devices lately for both laboratory research and home use. With these new affordance in user interfaces (UI), how can gestures be used to improve interaction for large scale immersive display environments. Through the investigation of full body, head and hand tracking, this paper will discuss various modalities of gesture recognition and compare their usability to other forms of interactivity. We will explore a specific implementation of hand gesture tracking within a large tiled display environment for use with common collaborative media interaction activities.

  6. Fabrication of metallic nanowires and nanoribbons using laser interference lithography and shadow lithography

    SciTech Connect

    Park, Joong- Mok; Nalwa, Kanwar Singh; Leung, Wai; Constant, Kristen; Chaudhary, Sumit; Ho, Kai-Ming

    2010-04-30

    Ordered and free-standing metallic nanowires were fabricated by e-beam deposition on patterned polymer templates made by interference lithography. The dimensions of the nanowires can be controlled through adjustment of deposition conditions and polymer templates. Grain size, polarized optical transmission and electrical resistivity were measured with ordered and free-standing nanowires.

  7. Cancer cell specific cytotoxic gene expression mediated by ARF tumor suppressor promoter constructs.

    PubMed

    Kurayoshi, Kenta; Ozono, Eiko; Iwanaga, Ritsuko; Bradford, Andrew P; Komori, Hideyuki; Ohtani, Kiyoshi

    2014-07-18

    In current cancer treatment protocols, such as radiation and chemotherapy, side effects on normal cells are major obstacles to radical therapy. To avoid these side effects, a cancer cell-specific approach is needed. One way to specifically target cancer cells is to utilize a cancer specific promoter to express a cytotoxic gene (suicide gene therapy) or a viral gene required for viral replication (oncolytic virotherapy). For this purpose, the selected promoter should have minimal activity in normal cells to avoid side effects, and high activity in a wide variety of cancers to obtain optimal therapeutic efficacy. In contrast to the AFP, CEA and PSA promoters, which have high activity only in a limited spectrum of tumors, the E2F1 promoter exhibits high activity in wide variety of cancers. This is based on the mechanism of carcinogenesis. Defects in the RB pathway and activation of the transcription factor E2F, the main target of the RB pathway, are observed in almost all cancers. Consequently, the E2F1 promoter, which is mainly regulated by E2F, has high activity in wide variety of cancers. However, E2F is also activated by growth stimulation in normal growing cells, suggesting that the E2F1 promoter may also be highly active in normal growing cells. In contrast, we found that the tumor suppressor ARF promoter is activated by deregulated E2F activity, induced by forced inactivation of pRB, but does not respond to physiological E2F activity induced by growth stimulation. We also found that the deregulated E2F activity, which activates the ARF promoter, is detected only in cancer cell lines. These observations suggest that ARF promoter is activated by E2F only in cancer cells and therefore may be more cancer cell-specific than E2F1 promoter to drive gene expression. We show here that the ARF promoter has lower activity in normal growing fibroblasts and shows higher cancer cell-specificity compared to the E2F1 promoter. We also demonstrate that adenovirus expressing HSV

  8. MOZ (MYST3, KAT6A) inhibits senescence via the INK4A-ARF pathway.

    PubMed

    Sheikh, B N; Phipson, B; El-Saafin, F; Vanyai, H K; Downer, N L; Bird, M J; Kueh, A J; May, R E; Smyth, G K; Voss, A K; Thomas, T

    2015-11-19

    Cellular senescence is an important mechanism that restricts tumour growth. The Ink4a-Arf locus (also known as Cdkn2a), which encodes p16(INK4A) and p19(ARF), has a central role in inducing and maintaining senescence. Given the importance of cellular senescence in restraining tumour growth, great emphasis is being placed on the identification of novel factors that can modulate senescence. The MYST-family histone acetyltransferase MOZ (MYST3, KAT6A), first identified in recurrent translocations in acute myeloid leukaemia, has been implicated in both the promotion and inhibition of senescence. In this study, we investigate the role of MOZ in cellular senescence and show that MOZ is a potent inhibitor of senescence via the INK4A-ARF pathway. Primary mouse embryonic fibroblasts (MEFs) isolated from Moz-deficient embryos exhibit premature senescence, which was rescued on the Ink4a-Arf(-/-) background. Importantly, senescence resulting from the absence of MOZ was not accompanied by DNA damage, suggesting that MOZ acts independently of the DNA damage response. Consistent with the importance of senescence in cancer, expression profiling revealed that genes overexpressed in aggressive and highly proliferative cancers are expressed at low levels in Moz-deficient MEFs. We show that MOZ is required to maintain normal levels of histone 3 lysine 9 (H3K9) and H3K27 acetylation at the transcriptional start sites of at least four genes, Cdc6, Ezh2, E2f2 and Melk, and normal mRNA levels of these genes. CDC6, EZH2 and E2F2 are known inhibitors of the INK4A-ARF pathway. Using chromatin immunoprecipitation, we show that MOZ occupies the Cdc6, Ezh2 and Melk loci, thereby providing a direct link between MOZ, H3K9 and H3K27 acetylation, and normal transcriptional levels at these loci. This work establishes that MOZ is an upstream inhibitor of the INK4A-ARF pathway, and suggests that inhibiting MOZ may be one way to induce senescence in proliferative tumour cells. PMID:25772242

  9. Materials Design for Block Copolymer Lithography

    NASA Astrophysics Data System (ADS)

    Sweat, Daniel Patrick

    Block copolymers (BCPs) have attracted a great deal of scientific and technological interest due to their ability to spontaneously self-assemble into dense periodic nanostructures with a typical length scale of 5 to 50 nm. The use of self-assembled BCP thin-films as templates to form nanopatterns over large-area is referred to as BCP lithography. Directed self-assembly of BCPs is now viewed as a viable candidate for sub-20 nm lithography by the semiconductor industry. However, there are multiple aspects of assembly and materials design that need to be addressed in order for BCP lithography to be successful. These include substrate modification with polymer brushes or mats, tailoring of the block copolymer chemistry, understanding thin-film assembly and developing epitaxial like methods to control long range alignment. The rational design, synthesis and self-assembly of block copolymers with large interaction parameters (chi) is described in the first part of this dissertation. Two main blocks were chosen for introducing polarity into the BCP system, namely poly(4-hydroxystyrene) and poly(2-vinylpyridine). Each of these blocks are capable of ligating Lewis acids which can increase the etch contrast between the blocks allowing for facile pattern transfer to the underlying substrate. These BCPs were synthesized by living anionic polymerization and showed excellent control over molecular weight and dispersity, providing access to sub 5-nm domain sizes. Polymer brushes consist of a polymer chain with one end tethered to the surface and have wide applicability in tuning surface energy, forming responsive surfaces and increasing biocompatibility. In the second part of the dissertation, we present a universal method to grow dense polymer brushes on a wide range of substrates and combine this chemistry with BCP assembly to fabricate nanopatterned polymer brushes. This is the first demonstration of introducing additional functionality into a BCP directing layer and opens up

  10. Illumination optimization in optical projective lithography

    NASA Astrophysics Data System (ADS)

    Jiang, Hai-bo; Xing, Ting-wen; Du, Meng; Chen, An

    2013-08-01

    As lithography still pushing toward to lower K1 imaging, traditional illumination source shapes may perform marginally in resolving complex layouts, freeform source shapes are expected to achieve better image quality. Illumination optimization as one of inverse lithography techniques attempts to synthesize the input source which leads to the desired output wafer pattern by inverting the forward model from mask to wafer. Usually, inverse lithography problem could be solved by standard numerical methods. Recently, a set of gradient-based numerical methods have been developed to solve the mask optimization problem based on Hopkins' approach. In this study, the same method is also applied to resolve the illumination optimization but based on Abbe imaging formulation for partially coherent illumination. Firstly we state a pixel-based source representation, and analyze the constraint condition for source intensity. Secondly, we propose an objective function which includes three aspects: image fidelity, source smoothness and discretization penalty. Image fidelity is to ensure that the image is as close to the given mask as possible. Source smoothness and discretization penalty are to decrease the source complexity. All of the three items could be described mathematically. Thirdly, we describe the detailed optimization flow, and present the advantages of using Abbe imaging formulation as calculation mode of light intensity. Finally, some simulations were done with initial conventional illumination for 90nm isolated, dense and elbow features separately. As a result, we get irregular dipole source shapes for isolated and dense pattern, and irregular quadrupole for elbow pattern. The results also show that our method could provide great improvements in both image fidelity and source complexity.

  11. EUV lithography imaging using novel pellicle membranes

    NASA Astrophysics Data System (ADS)

    Pollentier, Ivan; Vanpaemel, Johannes; Lee, Jae Uk; Adelmann, Christoph; Zahedmanesh, Houman; Huyghebaert, Cedric; Gallagher, Emily E.

    2016-03-01

    EUV mask protection against defects during use remains a challenge for EUV lithography. A stand-off protective membrane - a pellicle - is targeted to prevent yield losses in high volume manufacturing during handling and exposure, just as it is for 193nm lithography. The pellicle is thin enough to transmit EUV exposure light, yet strong enough to remain intact and hold any particles out of focus during exposure. The development of pellicles for EUV is much more challenging than for 193nm lithography for multiple reasons including: high absorption of most materials at EUV wavelength, pump-down sequences in the EUV vacuum system, and exposure to high intensity EUV light. To solve the problems of transmission and film durability, various options have been explored. In most cases a thin core film is considered, since the deposition process for this is well established and because it is the simplest option. The transmission specification typically dictates that membranes are very thin (~50nm or less), which makes both fabrication and film mechanical integrity difficult. As an alternative, low density films (e.g. including porosity) will allow thicker membranes for a given transmission specification, which is likely to improve film durability. The risk is that the porosity could influence the imaging. At imec, two cases of pellicle concepts based on reducing density have been assessed : (1) 3D-patterned SiN by directed self-assembly (DSA), and (2) carbon nanomaterials such as carbon nanotubes (CNT) and carbon nanosheets (CNS). The first case is based on SiN membranes that are 3D-patterned by Directed Self Assembly (DSA). The materials are tested relative to the primary specifications: EUV transmission and film durability. A risk assessment of printing performance is provided based on simulations of scattered energy. General conclusions on the efficacy of various approaches will provided.

  12. Molecular resists for EUV and EB lithography

    NASA Astrophysics Data System (ADS)

    Takemoto, Ichiki; Ando, Nobuo; Edamatsu, Kunishige; Lee, Youngjoon; Takashima, Masayuki; Yokoyama, Hiroyuki

    2008-03-01

    Extreme ultraviolet lithography at a wavelength of 13.5 nm has been prepared for next generation lithography for several years. Of primary concern in EUV lithography is line edge roughness as well as high sensitivity. In recent years, various types of resist, such as protected PHS resin resist and molecular resist, have been investigated. In order to reduce LER, we have studied novel molecular resists which are promising alternative to polymeric photoresists for use as imaging materials with improved resolution and line edge roughness. The work reported in this paper has focused on the development of a new class of chemically amplified molecular resists that are composed of a single molecule which contains all of the different functionalities desired in a chemically amplified resists. For the purpose of improvement of the resist performance, we have designed the resist material of a protected polyphenol derivative (protected Compound A). PAG moiety is bonded to Compound A to achieve uniform PAG density and to control the acid diffusion length in a resist film. We analyzed uniformity of PAG density in a resist film by using gradient shaving preparation and TOF-SIMS analysis. From the TOF-SIMS spectra, the ions intensities of the PAG moiety are almost constant from the surface to the bottom of the film. Therefore, we can conclude that PAG is distributed homogeneously. Under e-beam exposure, a 100nm thick film of the PAG bonded molecular resist resolved lines down to 100nm. We also discussed the new design for molecular resists, their synthesis and lithographic performance.

  13. Plasma formed ion beam projection lithography system

    SciTech Connect

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  14. Wave and Particle in Molecular Interference Lithography

    SciTech Connect

    Juffmann, Thomas; Truppe, Stefan; Geyer, Philipp; Major, Andras G.; Arndt, Markus; Deachapunya, Sarayut; Ulbricht, Hendrik

    2009-12-31

    The wave-particle duality of massive objects is a cornerstone of quantum physics and a key property of many modern tools such as electron microscopy, neutron diffraction or atom interferometry. Here we report on the first experimental demonstration of quantum interference lithography with complex molecules. Molecular matter-wave interference patterns are deposited onto a reconstructed Si(111) 7x7 surface and imaged using scanning tunneling microscopy. Thereby both the particle and the quantum wave character of the molecules can be visualized in one and the same image. This new approach to nanolithography therefore also represents a sensitive new detection scheme for quantum interference experiments.

  15. Wave and particle in molecular interference lithography.

    PubMed

    Juffmann, Thomas; Truppe, Stefan; Geyer, Philipp; Major, András G; Deachapunya, Sarayut; Ulbricht, Hendrik; Arndt, Markus

    2009-12-31

    The wave-particle duality of massive objects is a cornerstone of quantum physics and a key property of many modern tools such as electron microscopy, neutron diffraction or atom interferometry. Here we report on the first experimental demonstration of quantum interference lithography with complex molecules. Molecular matter-wave interference patterns are deposited onto a reconstructed Si(111) 7x7 surface and imaged using scanning tunneling microscopy. Thereby both the particle and the quantum wave character of the molecules can be visualized in one and the same image. This new approach to nanolithography therefore also represents a sensitive new detection scheme for quantum interference experiments. PMID:20366311

  16. Nanoimprint lithography: an enabling technology for nanophotonics

    NASA Astrophysics Data System (ADS)

    Yao, Yuhan; Liu, He; Wang, Yifei; Li, Yuanrui; Song, Boxiang; Bratkovsk, Alexandre; Wang, Shih-Yuan; Wu, Wei

    2015-11-01

    Nanoimprint lithography (NIL) is an indispensable tool to realize a fast and accurate nanoscale patterning in nanophotonics due to high resolution and high yield. The number of publication on NIL has increased from less than a hundred per year to over three thousand per year. In this paper, the most recent developments on NIL patterning transfer processes and its applications on nanophotonics are discussed and reviewed. NIL has been opening up new opportunities for nanophotonics, especially in fabricating optical meta-materials. With more researches on this low-cost high-throughput fabrication technology, we should anticipate a brighter future for nanophotonics and NIL.

  17. EUV lithography: progress, challenges, and outlook

    NASA Astrophysics Data System (ADS)

    Wurm, S.

    2014-10-01

    Extreme Ultraviolet Lithography (EUVL) has been in the making for more than a quarter century. The first EUVL production tools have been delivered over the past year and chip manufacturers and suppliers are maturing the technology in pilot line mode to prepare for high volume manufacturing (HVM). While excellent progress has been made in many technical and business areas to prepare EUVL for HVM introduction, there are still critical technical and business challenges to be addressed before the industry will be able to use EUVL in HVM.

  18. Atom Lithography with a Holographic Light Mask

    NASA Astrophysics Data System (ADS)

    Mützel, M.; Tandler, S.; Haubrich, D.; Meschede, D.; Peithmann, K.; Flaspöhler, M.; Buse, K.

    2002-02-01

    In atom lithography with optical masks, deposition of an atomic beam on a given substrate is controlled by a standing light-wave field. The lateral intensity distribution of the light field is transferred to the substrate with nanometer scale. We have tailored a complex pattern of this intensity distribution through diffraction of a laser beam from a hologram that is stored in a photorefractive crystal. This method can be extended to superpose 1000 or more laser beams. The method is furthermore applicable during growth processes and thus allows full 3D structuring of suitable materials with periodic and nonperiodic patterns at nanometer scales.

  19. Antiadhesion considerations for UV nanoimprint lithography

    SciTech Connect

    Houle, F. A.; Rettner, C. T.; Miller, D. C.; Sooriyakumaran, R.

    2007-05-21

    Low surface energy fluorosilane layers are widely used as release coatings for quartz templates in UV nanoimprint lithography, yet they are generally found to degrade with use. It is found that these layers are chemically attacked when used with UV cured methacrylate and vinyl ether resists, as found previously for acrylate resists, leading to the conclusion that low reactivity and not low surface energy is of importance for effective release layers. It is shown that an ion-beam deposited diamondlike carbon release coating is a useful alternative, having both stability in a reactive environment and lower adhesion despite its higher surface energy.

  20. Laser lithography by photon scanning tunneling microscopy

    SciTech Connect

    Lee, I.; Warmack, R.J.; Ferrell, T.L.

    1993-06-01

    We have investigated the possibility of using a photon scanning tunneling microscope (PSTM) for laser lithography. A contrast enhancement material (CEM) is coated onto a sample slide and coupled to the prism of a PSTM. The CEM becomes transparent above a laser (HeCd at a wavelength of 442 nm) intensity threshold attained due to the proximity of the probe tip. The same surface can then be inspected using the given experimental configuration by replacing the HeCd laser line with a non-exposing 633-nm HeNe laser line. Direct patterns can be produced by varying the exposure time and the shape of the probe tip.

  1. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect

    Jiang, Ximan

    2006-05-18

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  2. Pathogenesis of sudden death following water immersion (immersion syndrome)

    NASA Technical Reports Server (NTRS)

    Buhring, M.; Spies, H. F.

    1981-01-01

    Sympathetic activity under cold stress is investigated. Predominantly vagal cardio-depressive reflexes are discussed besides currently known mechanisms of sudden death after water immersion. Pronounced circulatory centralization in diving animals as well as following exposure in cold water indicates additional sympathetic activity. In cold water baths of 15 C, measurements indicate an increase in plasma catecholamine levels by more than 300 percent. This may lead to cardiac arrhythmias by the following mechanisms: cold water essentially induces sinus bradycardia; brady-and tachycardiarrhythmias may supervene as secondary complications; sinusbradycardia may be enhanced by sympathetic hypertonus. Furthermore, ectopic dysrhythmias are liable to be induced by the strictly sympathetic innervation of the ventricle. Myocardial ischemia following a rise in peripheral blood pressure constitutes another arrhythmogenic factor. Some of these reactions are enhanced by alcohol intoxication.

  3. Transcriptional Coactivator Cited2 Induces Bmi1 and Mel18 and Controls Fibroblast Proliferation via Ink4a/ARF

    PubMed Central

    Kranc, Kamil R.; Bamforth, Simon D.; Bragança, José; Norbury, Chris; van Lohuizen, Maarten; Bhattacharya, Shoumo

    2003-01-01

    Cited2 (CBP/p300 interacting transactivator with ED-rich tail 2) is required for embryonic development, coactivation of transcription factor AP-2, and inhibition of hypoxia-inducible factor 1 transactivation. Cited2 is induced by multiple growth factors and cytokines and oncogenically transforms cells. Here, we show that the proliferation of Cited2−/− mouse embryonic fibroblasts ceases prematurely. This is associated with a reduction in growth fraction, senescent cellular morphology, and increased expression of the cell proliferation inhibitors p16INK4a, p19ARF, and p15INK4b. Deletion of INK4a/ARF (encoding p16INK4a and p19ARF) completely rescued the defective proliferation of Cited2−/− fibroblasts. However, the deletion of INK4a/ARF did not rescue the embryonic malformations observed in Cited2−/− mice, indicating that INK4a/ARF-independent pathways are likely to be involved here. We found that Cited2−/− fibroblasts had reduced expression of the polycomb-group genes Bmi1 and Mel18, which function as INK4a/ARF and Hox repressors. Complementation with CITED2-expressing retrovirus enhanced proliferation, induced Bmi1/Mel18 expression, and decreased INK4a/ARF expression. Bmi1- and Mel18-expressing retroviruses enhanced the proliferation of Cited2−/− fibroblasts, indicating that they function downstream of Cited2. Our results provide genetic evidence that Cited2 controls the expression of INK4a/ARF and fibroblast proliferation, at least in part via the polycomb-group genes Bmi1 and Mel18. PMID:14560011

  4. Regulating the large Sec7 ARF guanine nucleotide exchange factors: the when, where and how of activation

    PubMed Central

    Wright, John; Kahn, Richard A.; Sztul, Elizabeth

    2016-01-01

    Eukaryotic cells require selective sorting and transport of cargo between intracellular compartments. This is accomplished at least in part by vesicles that bud from a donor compartment, sequestering a subset of resident protein “cargos” destined for transport to an acceptor compartment. A key step in vesicle formation and targeting is the recruitment of specific proteins that form a coat on the outside of the vesicle in a process requiring the activation of regulatory GTPases of the ARF family. Like all such GTPases, ARFs cycle between inactive, GDP-bound, and membrane-associated active, GTP-bound, conformations. And like most regulatory GTPases the activating step is slow and thought to be rate limiting in cells, requiring the use of ARF guanine nucleotide exchange factor (GEFs). ARF GEFs are characterized by the presence of a conserved, catalytic Sec7 domain, though they also contain motifs or additional domains that confer specificity to localization and regulation of activity. These domains have been used to define and classify five different sub-families of ARF GEFs. One of these, the BIG/GBF1 family, includes three proteins that are each key regulators of the secretory pathway. GEF activity initiates the coating of nascent vesicles via the localized generation of activated ARFs and thus these GEFs are the upstream regulators that define the site and timing of vesicle production. Paradoxically, while we have detailed molecular knowledge of how GEFs activate ARFs, we know very little about how GEFs are recruited and/or activated at the right time and place to initiate transport. This review summarizes the current knowledge of GEF regulation and explores the still uncertain mechanisms that position GEFs at “budding ready” membrane sites to generate highly localized activated ARFs. PMID:24728583

  5. A conserved domain in exon 2 coding for the human and murine ARF tumor suppressor protein is required for autophagy induction

    PubMed Central

    Budina-Kolomets, Anna; Hontz, Robert D; Pimkina, Julia; Murphy, Maureen E

    2013-01-01

    The ARF tumor suppressor, encoded by the CDKN2A gene, has a well-defined role regulating TP53 stability; this activity maps to exon 1β of CDKN2A. In contrast, little is known about the function(s) of exon 2 of ARF, which contains the majority of mutations in human cancer. In addition to controlling TP53 stability, ARF also has a role in the induction of autophagy. However, whether the principal molecule involved is full-length ARF, or a small molecular weight variant called smARF, has been controversial. Additionally, whether tumor-derived mutations in exon 2 of CDKN2A affect ARF’s autophagy function is unknown. Finally, whereas it is known that silencing or inhibiting TP53 induces autophagy, the contribution of ARF to this induction is unknown. In this report we used multiple autophagy assays to map a region located in the highly conserved 5′ end of exon 2 of CDKN2A that is necessary for autophagy induction by both human and murine ARF. We showed that mutations in exon 2 of CDKN2A that affect the coding potential of ARF, but not p16INK4a, all impair the ability of ARF to induce autophagy. We showed that whereas full-length ARF can induce autophagy, our combined data suggest that smARF instead induces mitophagy (selective autophagy of mitochondria), thus potentially resolving some confusion regarding the role of these variants. Finally, we showed that silencing Tp53 induces autophagy in an ARF-dependent manner. Our data indicated that a conserved domain in ARF mediates autophagy, and for the first time they implicate autophagy in ARF’s tumor suppressor function. PMID:23939042

  6. A review of roll-to-roll nanoimprint lithography

    PubMed Central

    2014-01-01

    Since its introduction in 1995, nanoimprint lithography has been demonstrated in many researches as a simple, low-cost, and high-throughput process for replicating micro- and nanoscale patterns. Due to its advantages, the nanoimprint lithography method has been rapidly developed over the years as a promising alternative to conventional nanolithography processes to fulfill the demands generated from the recent developments in the semiconductor and flexible electronics industries, which results in variations of the process. Roll-to-roll (R2R) nanoimprint lithography (NIL) is the most demanded technique due to its high-throughput fulfilling industrial-scale application. In the present work, a general literature review on the various types of nanoimprint lithography processes especially R2R NIL and the methods commonly adapted to fabricate imprint molds are presented to provide a clear view and understanding on the nanoimprint lithography technique as well as its recent developments. PACS 81.16.Nd PMID:25024682

  7. Comparison of KrF and ArF excimer laser treatment of biopolymer surface

    NASA Astrophysics Data System (ADS)

    Michaljaničová, I.; Slepička, P.; Heitz, J.; Barb, R. A.; Sajdl, P.; Švorčík, V.

    2015-06-01

    The goal of this work was the investigation of the impact of two different excimer lasers on two biocompatible and biodegradable polymers (poly-L-lactide and poly hydroxybutyrate). Both polymers find usage in medical and pharmaceutical fields. The polymers were modified by KrF and ArF excimer lasers. Subsequently the impact on surface morphology, surface chemistry changes, and thermal properties was studied by means of confocal and AFM microscopy, FTIR and XPS spectroscopy and DSC calorimetry. Under the same conditions of laser treatment it was observed that ArF laser causes more significant changes on surface chemistry, surface morphology and pattern formation on the polymers under investigation. The data obtained in this work can be used for a wide range of possible applications, in tissue engineering or in combination with metallization in electronics, e.g. for biosensors.

  8. The effects of polymer side-chain structure on roughness formation of ArF photoresist in plasma etching processes

    NASA Astrophysics Data System (ADS)

    Uesugi, Takuji; Okada, Takeru; Wada, Akira; Kato, Keisuke; Yasuda, Atsushi; Maeda, Shinichi; Samukawa, Seiji

    2012-02-01

    Low etching resistance and roughness formation of ArF photoresist during plasma etching are serious problems. We have previously found that decisive factors affecting the plasma resistance and roughness formation in an ArF photoresist are determined by ultraviolet/vacuum ultraviolet radiation and roughness formation is dominated by chemical reactions. In this paper, on the basis of our previous findings on the interaction between radiation species from plasma and ArF photoresist polymers, we investigated the polymer structural dependence for the degradation mechanism of ArF photoresist in the plasma etching processes. The etching resistance of ArF photoresist was improved by controlling the elemental ratio of oxygen atoms and ring structures in photoresist polymer. Furthermore, lactone C=O bond is found to be a key factor for roughness formation during the etching process. We have revealed the importance of the molecular structure of ArF photoresist for improving the surface roughness and etching resistance during the plasma etching process.

  9. Activation of the Small G Protein Arf6 by Dynamin2 through Guanine Nucleotide Exchange Factors in Endocytosis

    PubMed Central

    Okada, Risa; Yamauchi, Yohei; Hongu, Tsunaki; Funakoshi, Yuji; Ohbayashi, Norihiko; Hasegawa, Hiroshi; Kanaho, Yasunori

    2015-01-01

    The small G protein Arf6 and the GTPase dynamin2 (Dyn2) play key roles in clathrin-mediated endocytosis (CME). However, their functional relationship remains obscure. Here, we show that Arf6 functions as a downstream molecule of Dyn2 in CME. Wild type of Dyn2 overexpressed in HeLa cells markedly activates Arf6, while a GTPase-lacking Dyn2 mutant does not. Of the Arf6-specific guanine nucleotide exchange factors, EFA6A, EFA6B, and EFA6D specifically interact with Dyn2. Furthermore, overexpression of dominant negative mutants or knockdown of EFA6B and EFA6D significantly inhibit Dyn2-induced Arf6 activation. Finally, overexpression of the binding region peptide of EFA6B for Dyn2 or knockdown of EFA6B and EFA6D significantly suppresses clathrin-mediated transferrin uptake. These results provide evidence for a novel Arf6 activation mechanism by Dyn2 through EFA6B and EFA6D in CME in a manner dependent upon the GTPase activity of Dyn2. PMID:26503427

  10. A presynaptic role for the ADP ribosylation factor (ARF)-specific GDP/GTP exchange factor msec7-1

    PubMed Central

    Ashery, Uri; Koch, Henriette; Scheuss, Volker; Brose, Nils; Rettig, Jens

    1999-01-01

    ADP ribosylation factors (ARFs) represent a family of small monomeric G proteins that switch from an inactive, GDP-bound state to an active, GTP-bound state. One member of this family, ARF6, translocates on activation from intracellular compartments to the plasma membrane and has been implicated in regulated exocytosis in neuroendocrine cells. Because GDP release in vivo is rather slow, ARF activation is facilitated by specific guanine nucleotide exchange factors like cytohesin-1 or ARNO. Here we show that msec7-1, a rat homologue of cytohesin-1, translocates ARF6 to the plasma membrane in living cells. Overexpression of msec7-1 leads to an increase in basal synaptic transmission at the Xenopus neuromuscular junction. msec7-1-containing synapses have a 5-fold higher frequency of spontaneous synaptic currents than control synapses. On stimulation, the amplitudes of the resulting evoked postsynaptic currents of msec7-1-overexpressing neurons are increased as well. However, further stimulation leads to a decline in amplitudes approaching the values of control synapses. This transient effect on amplitude is strongly reduced on overexpression of msec7-1E157K, a mutant incapable of translocating ARFs. Our results provide evidence that small G proteins of the ARF family and activating factors like msec7-1 play an important role in synaptic transmission, most likely by making more vesicles available for fusion at the plasma membrane. PMID:9927699

  11. RNA helicase DDX5 is a p53-independent target of ARF that participates in ribosome biogenesis

    PubMed Central

    Saporita, Anthony J.; Chang, Hsiang-Chun; Winkeler, Crystal L.; Apicelli, Anthony J.; Kladney, Raleigh D.; Wang, Jianbo; Townsend, R. Reid; Michel, Loren S.; Weber, Jason D.

    2011-01-01

    The p19ARF tumor suppressor limits ribosome biogenesis and responds to hyperproliferative signals to activate the p53 checkpoint response. While its activation of p53 has been well characterized, ARF’s role in restraining nucleolar ribosome production is poorly understood. Here we report the use of a mass spectroscopic analysis to identify protein changes within the nucleoli of Arf-deficient mouse cells. Through this approach, we discovered that ARF limited the nucleolar localization of the RNA helicase DDX5 which promotes the synthesis and maturation of rRNA, ultimately increasing ribosome output and proliferation. ARF inhibited the interaction between DDX5 and nucleophosmin (NPM), preventing association of DDX5 with the rDNA promoter and nuclear pre-ribosomes. In addition, Arf-deficient cells transformed by oncogenic RasV12 were addicted to DDX5, since reduction of DDX5 was sufficient to impair RasV12-driven colony formation in soft agar and tumor growth in mice. Taken together, our findings indicate that DDX5 is a key p53-independent target of the ARF tumor suppressor and is a novel non-oncogene participant in ribosome biogenesis. PMID:21937682

  12. Learning Relative Motion Concepts in Immersive and Non-Immersive Virtual Environments

    ERIC Educational Resources Information Center

    Kozhevnikov, Michael; Gurlitt, Johannes; Kozhevnikov, Maria

    2013-01-01

    The focus of the current study is to understand which unique features of an immersive virtual reality environment have the potential to improve learning relative motion concepts. Thirty-seven undergraduate students learned relative motion concepts using computer simulation either in immersive virtual environment (IVE) or non-immersive desktop…

  13. Rayleigh rejection filters for 193-nm ArF laser Raman spectroscopy

    NASA Technical Reports Server (NTRS)

    Mckenzie, Robert L.

    1993-01-01

    Selected organic absorbers and their solvents are evaluated as spectral filters for the rejection of 193-nm Rayleigh light associated with the use of an ArF excimer laser for Raman spectroscopy. A simply constructed filter cell filled with 0.5 percent acetone in water and an optical path of 7 mm is shown effectively to eliminate stray Rayleigh light underlying the Raman spectrum from air while transmitting 60 percent of the Raman light scattered by O2.

  14. Breaking a paradigm: IL-6/STAT3 signaling suppresses metastatic prostate cancer upon ARF expression.

    PubMed

    Culig, Zoran; Pencik, Jan; Merkel, Olaf; Kenner, Lukas

    2016-03-01

    Interleukin 6 (IL-6)/signal transducer and activator of transcription 3 (STAT3) signaling is considered to have important oncogenic functions in prostate cancer (PCa). However, a recent study highlighted the central role of IL-6/STAT3 signaling in regulation of the ARF-MDM2-p53 senescence axis. This reversal of the postulated oncogenic properties of IL-6/STAT3 signaling in PCa has important therapeutic implications. PMID:27308625

  15. Antitumor impact of p14ARF on gefitinib-resistant non-small cell lung cancers.

    PubMed

    Saito, Ken; Takigawa, Nagio; Ohtani, Naoko; Iioka, Hidekazu; Tomita, Yuki; Ueda, Ryuzo; Fukuoka, Junya; Kuwahara, Kazuhiko; Ichihara, Eiki; Kiura, Katsuyuki; Kondo, Eisaku

    2013-08-01

    Activation of the epidermal growth factor receptor (EGFR) has been observed in many malignant tumors and its constitutive signal transduction facilitates the proliferation of tumors. EGFR-tyrosine kinase inhibitors, such as gefitinib, are widely used as a molecular-targeting agent for the inactivation of EGFR signaling and show considerable therapeutic effect in non-small cell lung cancers harboring activating EGFR mutations. However, prolonged treatment inevitably produces tumors with additional gefitinib-resistant mutations in EGFR, which is a critical issue for current therapeutics. We aimed to characterize the distinct molecular response to gefitinib between the drug-resistant and drug-sensitive lung adenocarcinoma cells in order to learn about therapeutics based on the molecular information. From the quantitative PCR analysis, we found a specific increase in p14(ARF) expression in gefitinib-sensitive lung adenocarcinoma clones, which was absent in gefitinib-resistant clones. Moreover, mitochondria-targeted p14(ARF) triggered the most augmented apoptosis in both clones. We identified the amino acid residues spanning from 38 to 65 as a functional core of mitochondrial p14(ARF) (p14 38-65 a.a.), which reduced the mitochondrial membrane potential and caused caspase-9 activation. The synthesized peptide covering the p14 38-65 a.a. induced growth suppression of the gefitinib-resistant clones without affecting nonneoplastic cells. Notably, transduction of the minimized dose of the p14 38-65 peptide restored the response to gefitinib like that in the sensitive clones. These findings suggest that the region of p14(ARF) 38-65 a.a. is critical in the pharmacologic action of gefitinib against EGFR-mutated lung adenocarcinoma cells and has potential utility in the therapeutics of gefitinib-resistant cancers. PMID:23761220

  16. Absolute dosimetry for extreme-ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Berger, Kurt W.; Campiotti, Richard H.

    2000-06-01

    The accurate measurement of an exposure dose reaching the wafer on an extreme ultraviolet (EUV) lithographic system has been a technical challenge directly applicable to the evaluation of candidate EUV resist materials and calculating lithography system throughputs. We have developed a dose monitoring sensor system that can directly measure EUV intensities at the wafer plane of a prototype EUV lithographic system. This sensor system, located on the wafer stage adjacent to the electrostatic chuck used to grip wafers, operates by translating the sensor into the aerial image, typically illuminating an 'open' (unpatterned) area on the reticle. The absolute signal strength can be related to energy density at the wafer, and thus used to determine resist sensitivity, and the signal as a function of position can be used to determine illumination uniformity at the wafer plane. Spectral filtering to enhance the detection of 13.4 nm radiation was incorporated into the sensor. Other critical design parameters include the packaging and amplification technologies required to place this device into the space and vacuum constraints of a EUV lithography environment. We describe two approaches used to determine the absolute calibration of this sensor. The first conventional approach requires separate characterization of each element of the sensor. A second novel approach uses x-ray emission from a mildly radioactive iron source to calibrate the absolute response of the entire sensor system (detector and electronics) in a single measurement.

  17. Dynamic maskless holographic lithography and applications

    NASA Astrophysics Data System (ADS)

    McAdams, Daniel R.

    The purpose of this research is to improve the resolution of dynamic maskless holographic lithography (DMHL) by using two-photon absorption, to provide a more thorough characterization of the process, and to expand the functionality of the process by adding previously undemonstrated patterning modes. Two-photon DMHL will be performed in both 2D and 3D configurations with specific characterization relating to process resolution and repeatability. The physical limits of DMHL will be discussed and ways to circumvent them will be proposed and tested. DMHL eliminates the need for a separate mask for every different pattern exposure and allows for real-time shaping of the exposure pattern. It uses an electrically addressable spatial light modulator (SLM) to create an arbitrary intensity pattern at the specimen plane. The SLM is a phase mask that displays a hologram. An algorithm is used to find an appropriate phase hologram for each desired intensity pattern. Each pixel of the SLM shapes the wavefront of the incoming laser light so that the natural Fourier transforming property of a lens causes the desired image to appear in the specimen plane. The process enables one-off projects to be done without the cost of fabricating a mask, and makes it possible to perform lithography with fewer (or even no) moving parts.

  18. Pattern-integrated interference lithography instrumentation

    NASA Astrophysics Data System (ADS)

    Burrow, G. M.; Leibovici, M. C. R.; Kummer, J. W.; Gaylord, T. K.

    2012-06-01

    Multi-beam interference (MBI) provides the ability to form a wide range of sub-micron periodic optical-intensity distributions with applications to a variety of areas, including photonic crystals (PCs), nanoelectronics, biomedical structures, optical trapping, metamaterials, and numerous subwavelength structures. Recently, pattern-integrated interference lithography (PIIL) was presented as a new lithographic method that integrates superposed pattern imaging with interference lithography in a single-exposure step. In the present work, the basic design and systematic implementation of a pattern-integrated interference exposure system (PIIES) is presented to realize PIIL by incorporating a projection imaging capability in a novel three-beam interference configuration. A fundamental optimization methodology is presented to model the system and predict MBI-patterning performance. To demonstrate the PIIL method, a prototype PIIES experimental configuration is presented, including detailed alignment techniques and experimental procedures. Examples of well-defined PC structures, fabricated with a PIIES prototype, are presented to demonstrate the potential of PIIL for fabricating dense integrated optical circuits, as well as numerous other subwavelength structures.

  19. Hard Transparent Arrays for Polymer Pen Lithography.

    PubMed

    Hedrick, James L; Brown, Keith A; Kluender, Edward J; Cabezas, Maria D; Chen, Peng-Cheng; Mirkin, Chad A

    2016-03-22

    Patterning nanoscale features across macroscopic areas is challenging due to the vast range of length scales that must be addressed. With polymer pen lithography, arrays of thousands of elastomeric pyramidal pens can be used to write features across centimeter-scales, but deformation of the soft pens limits resolution and minimum feature pitch, especially with polymeric inks. Here, we show that by coating polymer pen arrays with a ∼175 nm silica layer, the resulting hard transparent arrays exhibit a force-independent contact area that improves their patterning capability by reducing the minimum feature size (∼40 nm), minimum feature pitch (<200 nm for polymers), and pen to pen variation. With these new arrays, patterns with as many as 5.9 billion features in a 14.5 cm(2) area were written using a four hundred thousand pyramid pen array. Furthermore, a new method is demonstrated for patterning macroscopic feature size gradients that vary in feature diameter by a factor of 4. Ultimately, this form of polymer pen lithography allows for patterning with the resolution of dip-pen nanolithography across centimeter scales using simple and inexpensive pen arrays. The high resolution and density afforded by this technique position it as a broad-based discovery tool for the field of nanocombinatorics. PMID:26928012

  20. Mask cost of ownership for advanced lithography

    NASA Astrophysics Data System (ADS)

    Muzio, Edward G.; Seidel, Philip K.

    2000-07-01

    As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

  1. Mask and lithography techniques for FPD

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Wahlsten, M.; Sundelin, E.; Hansson, G.; Svensson, A.

    2015-09-01

    Large-field projection lithography for FPDs has developed gradually since the 90s. The LCD screen technology has remained largely unchanged and incremental development has given us better image quality, larger screen sizes, and above all lower cost per area. Recently new types of mobile devices with very high pixel density and/or OLED displays have given rise to dramatically higher requirem ents on photomask technology. Devices with 600 ppi or m ore need lithography with higher optical resolution and better linewidth control. OLED di splays pose new challenges with high sensitivity to transistor parameters and to capacitive cross-talk. New mask requirements leads to new maskwriter requirements and Mycronic has developed a new generation of large -area mask writers with significantly improved properties. This paper discusses and shows data for the improved writers. Mask production to high er quality stan dards also need metrology to verify the quality and Mycronic has introduced a 2D metrology tool with accuracy adequate for current and future masks. New printing or additive methods of producing disp lays on plastic or metal foil will make low-cost disp lays available. This inexpensive type of disp lays will exist side by side with the photographic quality displays of TVs and mobile devices, which will continue to be a challenge in terms of mask and production quality.

  2. Economic consequences of high throughput maskless lithography

    NASA Astrophysics Data System (ADS)

    Hartley, John G.; Govindaraju, Lakshmi

    2005-11-01

    Many people in the semiconductor industry bemoan the high costs of masks and view mask cost as one of the significant barriers to bringing new chip designs to market. All that is needed is a viable maskless technology and the problem will go away. Numerous sites around the world are working on maskless lithography but inevitably, the question asked is "Wouldn't a one wafer per hour maskless tool make a really good mask writer?" Of course, the answer is yes, the hesitation you hear in the answer isn't based on technology concerns, it's financial. The industry needs maskless lithography because mask costs are too high. Mask costs are too high because mask pattern generators (PG's) are slow and expensive. If mask PG's become much faster, mask costs go down, the maskless market goes away and the PG supplier is faced with an even smaller tool demand from the mask shops. Technical success becomes financial suicide - or does it? In this paper we will present the results of a model that examines some of the consequences of introducing high throughput maskless pattern generation. Specific features in the model include tool throughput for masks and wafers, market segmentation by node for masks and wafers and mask cost as an entry barrier to new chip designs. How does the availability of low cost masks and maskless tools affect the industries tool makeup and what is the ultimate potential market for high throughput maskless pattern generators?

  3. Benchtop Micromolding of Polystyrene by Soft Lithography

    PubMed Central

    Wang, Yuli; Balowski, Joseph; Phillips, Colleen; Phillips, Ryan; Sims, Christopher E.; Allbritton, Nancy L.

    2012-01-01

    Polystyrene (PS), a standard material for cell culture consumable labware, was molded into microstructures with high fidelity of replication by an elastomeric polydimethylsiloxane (PDMS) mold. The process was a simple, benchtop method based on soft lithography using readily available materials. The key to successful replica molding by this simple procedure relies on the use of a solvent, for example, gamma-butyrolactone, which dissolves PS without swelling the PDMS mold. PS solution was added to the PDMS mold, and evaporation of solvent was accomplished by baking the mold on a hotplate. Microstructures with feature sizes as small as 3 µm and aspect ratios as large as 7 were readily molded. Prototypes of microfluidic chips made from PS were prepared by thermal bonding of a microchannel molded in PS with a flat PS substrate. The PS microfluidic chip displayed much lower adsorption and absorption of hydrophobic molecules (e.g. rhodamine B) compared to a comparable chip created from PDMS. The molded PS surface exhibited stable surface properties after plasma oxidation as assessed by contact angle measurement. The molded, oxidized PS surface remained an excellent surface for cell culture based on cell adhesion and proliferation. The micromolded PS possessed properties that were ideal for biological and bioanalytical needs, thus making it an alternative material to PDMS and suitable for building lab-on-a-chip devices by soft lithography methods. PMID:21811715

  4. The Arf GAP ASAP1 provides a platform to regulate Arf4- and Rab11–Rab8-mediated ciliary receptor targeting

    PubMed Central

    Wang, Jing; Morita, Yoshiko; Mazelova, Jana; Deretic, Dusanka

    2012-01-01

    Dysfunctional trafficking to primary cilia is a frequent cause of human diseases known as ciliopathies, yet molecular mechanisms for specific targeting of sensory receptors to cilia are largely unknown. Here, we show that the targeting of ciliary cargo, represented by rhodopsin, is mediated by a specialized system, the principal component of which is the Arf GAP ASAP1. Ablation of ASAP1 abolishes ciliary targeting and causes formation of actin-rich periciliary membrane projections that accumulate mislocalized rhodopsin. We find that ASAP1 serves as a scaffold that brings together the proteins necessary for transport to the cilia including the GTP-binding protein Arf4 and the two G proteins of the Rab family—Rab11 and Rab8—linked by the Rab8 guanine nucleotide exchange factor Rabin8. ASAP1 recognizes the FR ciliary targeting signal of rhodopsin. Rhodopsin FR-AA mutant, defective in ASAP1 binding, fails to interact with Rab8 and translocate across the periciliary diffusion barrier. Our study implies that other rhodopsin-like sensory receptors may interact with this conserved system and reach the cilia using the same platform. PMID:22983554

  5. Source-mask co-optimization: optimize design for imaging and impact of source complexity on lithography performance

    NASA Astrophysics Data System (ADS)

    Hsu, Stephen; Li, Zhipan; Chen, Luoqi; Gronlund, Keith; Liu, Hua-yu; Socha, Robert

    2009-12-01

    The co-optimization of the source and mask patterns [1, 2] is vital to future advanced ArF technology node development. This paper extends work previously reported on this topic [3, 4]. We will systematically study the impact of source on designs with different k1 values using SMO. Previous work compared the co-optimized versus iterative source-mask optimization methods [3]. We showed that the co-optimization method clearly improved lithography performance. This paper's approach consists of: 1) Co-optimize a pixelated freeform source and a continuous transmission gray tone mask based on a user specified cost function; 2) ASML-certified scanner-specific models and constraints are applied to the optimized source; 3) Assist feature (AF) "seeds" are identified from the optimized continuous transmission mask (CTM). Both the AF seed and the main feature are subsequently converted into a polygon mask; 4) The extracted AF seeds and main features are co-optimized with the source to achieve the best lithographic performance. Using this approach, we first use a DRAM brick wall design to demonstrate that using the same cost function metric by adjusting the optimization conditions creates an image log slope only optimization that can easily be applied. An optimize design for imaging methodology is introduced and shown to be important for low k1 imaging. A typical 2x node SRAM design is used to illustrate an integrated SMO design rule optimization flow. We use the same SRAM layout that used design rule optimization to study the source complexity impact with a range of k1 values that varies from 0.42 to 0.35. For the source type, we use freeform and traditional finite pole shape DOEs, all subject to ASML's scanner-specific models and constraints. We report the process window, MEF and process variation band (PV band) with different source types to find which source type give the best lithography performance.

  6. Arf6 controls retromer traffic and intracellular cholesterol distribution via a phosphoinositide-based mechanism

    PubMed Central

    Marquer, Catherine; Tian, Huasong; Yi, Julie; Bastien, Jayson; Dall'Armi, Claudia; Yang-Klingler, YoungJoo; Zhou, Bowen; Chan, Robin Barry; Di Paolo, Gilbert

    2016-01-01

    Small GTPases play a critical role in membrane traffic. Among them, Arf6 mediates transport to and from the plasma membrane, as well as phosphoinositide signalling and cholesterol homeostasis. Here we delineate the molecular basis for the link between Arf6 and cholesterol homeostasis using an inducible knockout (KO) model of mouse embryonic fibroblasts (MEFs). We find that accumulation of free cholesterol in the late endosomes/lysosomes of Arf6 KO MEFs results from mistrafficking of Niemann–Pick type C protein NPC2, a cargo of the cation-independent mannose-6-phosphate receptor (CI-M6PR). This is caused by a selective increase in an endosomal pool of phosphatidylinositol-4-phosphate (PI4P) and a perturbation of retromer, which controls the retrograde transport of CI-M6PR via sorting nexins, including the PI4P effector SNX6. Finally, reducing PI4P levels in KO MEFs through independent mechanisms rescues aberrant retromer tubulation and cholesterol mistrafficking. Our study highlights a phosphoinositide-based mechanism for control of cholesterol distribution via retromer. PMID:27336679

  7. AMPA receptor signaling through BRAG2 and Arf6 critical for long-term synaptic depression.

    PubMed

    Scholz, Ralf; Berberich, Sven; Rathgeber, Louisa; Kolleker, Alexander; Köhr, Georg; Kornau, Hans-Christian

    2010-06-10

    Central nervous system synapses undergo activity-dependent alterations to support learning and memory. Long-term depression (LTD) reflects a sustained reduction of the synaptic AMPA receptor content based on targeted clathrin-mediated endocytosis. Here we report a current-independent form of AMPA receptor signaling, fundamental for LTD. We found that AMPA receptors directly interact via the GluA2 subunit with the synaptic protein BRAG2, which functions as a guanine-nucleotide exchange factor (GEF) for the coat-recruitment GTPase Arf6. BRAG2-mediated catalysis, controlled by ligand-binding and tyrosine phosphorylation of GluA2, activates Arf6 to internalize synaptic AMPA receptors upon LTD induction. Furthermore, acute blockade of the GluA2-BRAG2 interaction and targeted deletion of BRAG2 in mature hippocampal CA1 pyramidal neurons prevents LTD in CA3-to-CA1 cell synapses, irrespective of the induction pathway. We conclude that BRAG2-mediated Arf6 activation triggered by AMPA receptors is the convergent step of different forms of LTD, thus providing an essential mechanism for the control of vesicle formation by endocytic cargo. PMID:20547133

  8. Mouse Hepatitis Coronavirus RNA Replication Depends on GBF1-Mediated ARF1 Activation

    PubMed Central

    Verheije, Monique H.; Raaben, Matthijs; Mari, Muriel; te Lintelo, Eddie G.; Reggiori, Fulvio; van Kuppeveld, Frank J. M.; Rottier, Peter J. M.; de Haan, Cornelis A. M.

    2008-01-01

    Coronaviruses induce in infected cells the formation of double membrane vesicles, which are the sites of RNA replication. Not much is known about the formation of these vesicles, although recent observations indicate an important role for the endoplasmic reticulum in the formation of the mouse hepatitis coronavirus (MHV) replication complexes (RCs). We now show that MHV replication is sensitive to brefeldin A (BFA). Consistently, expression of a dominant-negative mutant of ARF1, known to mimic the action of the drug, inhibited MHV infection profoundly. Immunofluorescence analysis and quantitative electron microscopy demonstrated that BFA did not block the formation of RCs per se, but rather reduced their number. MHV RNA replication was not sensitive to BFA in MDCK cells, which are known to express the BFA-resistant guanine nucleotide exchange factor GBF1. Accordingly, individual knockdown of the Golgi-resident targets of BFA by transfection of small interfering RNAs (siRNAs) showed that GBF1, but not BIG1 or BIG2, was critically involved in MHV RNA replication. ARF1, the cellular effector of GBF1, also appeared to be involved in MHV replication, as siRNAs targeting this small GTPase inhibited MHV infection significantly. Collectively, our results demonstrate that GBF1-mediated ARF1 activation is required for efficient MHV RNA replication and reveal that the early secretory pathway and MHV replication complex formation are closely connected. PMID:18551169

  9. Biochemical methods for studying kinetic regulation of Arf1 activation by Sec7

    PubMed Central

    Richardson, Brian C.; Fromme, J. Christopher

    2015-01-01

    The Arf family of small GTPases regulates vesicular transport at several locations within the cell, and is in turn regulated by guanine nucleotide exchange factors (GEFs) via a conserved catalytic domain, termed the Sec7 domain. The catalytic activity of the Sec7 domain is well characterized in the context of a few GEFs acting at the periphery of the cell. This chapter describes techniques used to extend biochemical analysis of activity to the much larger GEFs acting on the Arf family in the core secretory pathway, using the activity of S. cerevisiae Sec7 on Arf1, regulating export from the trans-Golgi network (TGN), as a model. Complete methods for purification to near-homogeneity of all proteins required, including several Sec7 constructs and multiple relevant small GTPases, are detailed. These are followed by methods for quantification of the nucleotide exchange activity of Sec7 in a physiologically relevant context, including modifications required to dissect the signal integration functions of Sec7 as an effector of several other small GTPases, and methods for identifying stable Sec7-small GTPase interactions in the presence of membranes. These techniques may be extended to analysis of similar members of the Sec7 GEF subfamily in other species and acting elsewhere in the secretory pathway. PMID:26360031

  10. Integrated Conformational and Lipid-Sensing Regulation of Endosomal ArfGEF BRAG2

    PubMed Central

    Aizel, Kaheina; Biou, Valérie; Navaza, Jorge; Duarte, Lionel V.; Campanacci, Valérie; Cherfils, Jacqueline; Zeghouf, Mahel

    2013-01-01

    The mechanisms whereby guanine nucleotide exchange factors (GEFs) coordinate their subcellular targeting to their activation of small GTPases remain poorly understood. Here we analyzed how membranes control the efficiency of human BRAG2, an ArfGEF involved in receptor endocytosis, Wnt signaling, and tumor invasion. The crystal structure of an Arf1–BRAG2 complex that mimics a membrane-bound intermediate revealed an atypical PH domain that is constitutively anchored to the catalytic Sec7 domain and interacts with Arf. Combined with the quantitative analysis of BRAG2 exchange activity reconstituted on membranes, we find that this PH domain potentiates nucleotide exchange by about 2,000-fold by cumulative conformational and membrane-targeting contributions. Furthermore, it restricts BRAG2 activity to negatively charged membranes without phosphoinositide specificity, using a positively charged surface peripheral to but excluding the canonical lipid-binding pocket. This suggests a model of BRAG2 regulation along the early endosomal pathway that expands the repertoire of GEF regulatory mechanisms. Notably, it departs from the auto-inhibitory and feedback loop paradigm emerging from studies of SOS and cytohesins. It also uncovers a novel mechanism of unspecific lipid-sensing by PH domains that may allow sustained binding to maturating membranes. PMID:24058294

  11. The Arf GAP CNT-2 regulates the apoptotic fate in C. elegans asymmetric neuroblast divisions

    PubMed Central

    Singhvi, Aakanksha; Teuliere, Jerome; Talavera, Karla; Cordes, Shaun; Ou, Guangshuo; Vale, Ronald D.; Prasad, Brinda C.; Clark, Scott G.; Garriga, Gian

    2011-01-01

    Summary During development, all cells make the decision to live or die. While the molecular mechanisms that execute the apoptotic program are well defined, less is known about how cells decide whether to live or die. In C. elegans, this decision is linked to how cells divide asymmetrically [1, 2]. Several classes of molecules are known to regulate asymmetric cell divisions in metazoans, yet these molecules do not appear to control C. elegans divisions that produce apoptotic cells [3]. We identified CNT-2, an Arf GAP protein of the AGAP family, as a novel regulator of this type of neuroblast division. Loss of CNT-2 altered daughter cell size and caused the apoptotic cell to adopt the fate of its sister cell, resulting in extra neurons. CNT-2’s Arf GAP activity was essential for its function in these divisions. The N-terminus of CNT-2, which contains a GTPase-like domain that defines the AGAP class of Arf GAPs, negatively regulates CNT-2’s function. We provide evidence that CNT-2 regulates receptor-mediated endocytosis and consider the implications of its role in asymmetric cell divisions. PMID:21596567

  12. Arf6 guanine-nucleotide exchange factor cytohesin-2 regulates myelination in nerves.

    PubMed

    Torii, Tomohiro; Ohno, Nobuhiko; Miyamoto, Yuki; Kawahara, Kazuko; Saitoh, Yurika; Nakamura, Kazuaki; Takashima, Shou; Sakagami, Hiroyuki; Tanoue, Akito; Yamauchi, Junji

    2015-05-01

    In postnatal development of the peripheral nervous system (PNS), Schwann cells differentiate to insulate neuronal axons with myelin sheaths, increasing the nerve conduction velocity. To produce the mature myelin sheath with its multiple layers, Schwann cells undergo dynamic morphological changes. While extracellular molecules such as growth factors and cell adhesion ligands are known to regulate the myelination process, the intracellular molecular mechanism underlying myelination remains unclear. In this study, we have produced Schwann cell-specific conditional knockout mice for cytohesin-2, a guanine-nucleotide exchange factor (GEF) specifically activating Arf6. Arf6, a member of the Ras-like protein family, participates in various cellular functions including cell morphological changes. Cytohesin-2 knockout mice exhibit decreased Arf6 activity and reduced myelin thickness in the sciatic nerves, with decreased expression levels of myelin protein zero (MPZ), the major myelin marker protein. These results are consistent with those of experiments in which Schwann cell-neuronal cultures were treated with pan-cytohesin inhibitor SecinH3. On the other hand, the numbers of Ki67-positive cells in knockout mice and controls are comparable, indicating that cytohesin-2 does not have a positive effect on cell numbers. Thus, signaling through cytohesin-2 is required for myelination by Schwann cells, and cytohesin-2 is added to the list of molecules known to underlie PNS myelination. PMID:25824033

  13. Guidance on setting of acute reference dose (ARfD) for pesticides.

    PubMed

    Solecki, Roland; Davies, Les; Dellarco, Vicki; Dewhurst, Ian; Raaij, Marcel van; Tritscher, Angelika

    2005-11-01

    This paper summarises and extends the work developed over the last decade by the Joint FAO/WHO Meeting on Pesticide Residues (JMPR) for acute health risk assessment of agricultural pesticides. The general considerations in setting of acute reference doses (ARfDs) in a step-wise process, as well as specific considerations and guidance regarding selected toxicological endpoints are described in detail. The endpoints selected are based on the practical experience with agricultural pesticides by the JMPR and are not a comprehensive listing of all possible relevant endpoints. Haematotoxicity, immunotoxicity, neurotoxicity, liver and kidney toxicity, endocrine effects as well as developmental effects are taken into account as acute toxic alerts, relevant for the consideration of ARfDs for pesticides. The general biological background and the data available through standard toxicological testing for regulatory purposes, interpretation of the data, conclusions and recommendations for future improvements are described for each relevant endpoint. The paper also considers a single dose study protocol. This type of study is not intended to be included in routine toxicological testing for regulatory purposes, but rather to guide further testing when the current database indicates the necessity for an ARfD but does not allow a reliable derivation of the value. PMID:16040182

  14. Game engines and immersive displays

    NASA Astrophysics Data System (ADS)

    Chang, Benjamin; Destefano, Marc

    2014-02-01

    While virtual reality and digital games share many core technologies, the programming environments, toolkits, and workflows for developing games and VR environments are often distinct. VR toolkits designed for applications in visualization and simulation often have a different feature set or design philosophy than game engines, while popular game engines often lack support for VR hardware. Extending a game engine to support systems such as the CAVE gives developers a unified development environment and the ability to easily port projects, but involves challenges beyond just adding stereo 3D visuals. In this paper we outline the issues involved in adapting a game engine for use with an immersive display system including stereoscopy, tracking, and clustering, and present example implementation details using Unity3D. We discuss application development and workflow approaches including camera management, rendering synchronization, GUI design, and issues specific to Unity3D, and present examples of projects created for a multi-wall, clustered, stereoscopic display.

  15. Immersive video for virtual tourism

    NASA Astrophysics Data System (ADS)

    Hernandez, Luis A.; Taibo, Javier; Seoane, Antonio J.

    2001-11-01

    This paper describes a new panoramic, 360 degree(s) video system and its use in a real application for virtual tourism. The development of this system has required to design new hardware for multi-camera recording, and software for video processing in order to elaborate the panorama frames and to playback the resulting high resolution video footage on a regular PC. The system makes use of new VR display hardware, such as WindowVR, in order to make the view dependent on the viewer's spatial orientation and so enhance immersiveness. There are very few examples of similar technologies and the existing ones are extremely expensive and/or impossible to be implemented on personal computers with acceptable quality. The idea of the system starts from the concept of Panorama picture, developed in technologies such as QuickTimeVR. This idea is extended to the concept of panorama frame that leads to panorama video. However, many problems are to be solved to implement this simple scheme. Data acquisition involves simultaneously footage recording in every direction, and latter processing to convert every set of frames in a single high resolution panorama frame. Since there is no common hardware capable of 4096x512 video playback at 25 fps rate, it must be stripped in smaller pieces which the system must manage to get the right frames of the right parts as the user movement demands it. As the system must be immersive, the physical interface to watch the 360 degree(s) video is a WindowVR, that is, a flat screen with an orientation tracker that the user holds in his hands, moving it like if it were a virtual window through which the city and its activity is being shown.

  16. Initiation of immersed granular avalanches

    NASA Astrophysics Data System (ADS)

    Mutabaruka, Patrick; Delenne, Jean-Yves; Soga, Kenichi; Radjai, Farhang

    2014-05-01

    By means of coupled molecular dynamics-computational fluid dynamics simulations, we analyze the initiation of avalanches in a granular bed of spherical particles immersed in a viscous fluid and inclined above its angle of repose. In quantitative agreement with experiments, we find that the bed is unstable for a packing fraction below 0.59 but is stabilized above this packing fraction by negative excess pore pressure induced by the effect of dilatancy. From detailed numerical data, we explore the time evolution of shear strain, packing fraction, excess pore pressures, and granular microstructure in this creeplike pressure redistribution regime, and we show that they scale excellently with a characteristic time extracted from a model based on the balance of granular stresses in the presence of a negative excess pressure and its interplay with dilatancy. The cumulative shear strain at failure is found to be ≃0.2, in close agreement with the experiments, irrespective of the initial packing fraction and inclination angle. Remarkably, the avalanche is triggered when dilatancy vanishes instantly as a result of fluctuations while the average dilatancy is still positive (expanding bed) with a packing fraction that declines with the initial packing fraction. Another nontrivial feature of this creeplike regime is that, in contrast to dry granular materials, the internal friction angle of the bed at failure is independent of dilatancy but depends on the inclination angle, leading therefore to a nonlinear dependence of the excess pore pressure on the inclination angle. We show that this behavior may be described in terms of the contact network anisotropy, which increases with a nearly constant connectivity and levels off at a value (critical state) that increases with the inclination angle. These features suggest that the behavior of immersed granular materials is controlled not only directly by hydrodynamic forces acting on the particles but also by the influence of the

  17. Initiation of immersed granular avalanches.

    PubMed

    Mutabaruka, Patrick; Delenne, Jean-Yves; Soga, Kenichi; Radjai, Farhang

    2014-05-01

    By means of coupled molecular dynamics-computational fluid dynamics simulations, we analyze the initiation of avalanches in a granular bed of spherical particles immersed in a viscous fluid and inclined above its angle of repose. In quantitative agreement with experiments, we find that the bed is unstable for a packing fraction below 0.59 but is stabilized above this packing fraction by negative excess pore pressure induced by the effect of dilatancy. From detailed numerical data, we explore the time evolution of shear strain, packing fraction, excess pore pressures, and granular microstructure in this creeplike pressure redistribution regime, and we show that they scale excellently with a characteristic time extracted from a model based on the balance of granular stresses in the presence of a negative excess pressure and its interplay with dilatancy. The cumulative shear strain at failure is found to be ≃ 0.2, in close agreement with the experiments, irrespective of the initial packing fraction and inclination angle. Remarkably, the avalanche is triggered when dilatancy vanishes instantly as a result of fluctuations while the average dilatancy is still positive (expanding bed) with a packing fraction that declines with the initial packing fraction. Another nontrivial feature of this creeplike regime is that, in contrast to dry granular materials, the internal friction angle of the bed at failure is independent of dilatancy but depends on the inclination angle, leading therefore to a nonlinear dependence of the excess pore pressure on the inclination angle. We show that this behavior may be described in terms of the contact network anisotropy, which increases with a nearly constant connectivity and levels off at a value (critical state) that increases with the inclination angle. These features suggest that the behavior of immersed granular materials is controlled not only directly by hydrodynamic forces acting on the particles but also by the influence of the

  18. Social Interaction Development through Immersive Virtual Environments

    ERIC Educational Resources Information Center

    Beach, Jason; Wendt, Jeremy

    2014-01-01

    The purpose of this pilot study was to determine if participants could improve their social interaction skills by participating in a virtual immersive environment. The participants used a developing virtual reality head-mounted display to engage themselves in a fully-immersive environment. While in the environment, participants had an opportunity…

  19. The Balancing Act of Bilingual Immersion

    ERIC Educational Resources Information Center

    Hadi-Tabassum, Samina

    2005-01-01

    Hadi-Tabassum believes having a separate life context for each language she learned in childhood enabled her to switch easily among five different tongues. She states that the success of dual immersion bilingual programs is largely dependent on whether they immerse students in each of the involved languages separately and help students have a…

  20. Immersion Education in China: Teachers' Perspectives

    ERIC Educational Resources Information Center

    Kong, Stella; Hoare, Philip; Chi, Yanping

    2011-01-01

    This paper investigates the views of immersion teachers in Hong Kong and Xi'an towards the immersion curriculum they are teaching. Teachers are important stakeholders in any curriculum implementation and their views are significant in both evaluating progress and determining future directions. The teachers' views were gathered from questionnaires…

  1. Immersive virtual reality simulations in nursing education.

    PubMed

    Kilmon, Carol A; Brown, Leonard; Ghosh, Sumit; Mikitiuk, Artur

    2010-01-01

    This article explores immersive virtual reality as a potential educational strategy for nursing education and describes an immersive learning experience now being developed for nurses. This pioneering project is a virtual reality application targeting speed and accuracy of nurse response in emergency situations requiring cardiopulmonary resuscitation. Other potential uses and implications for the development of virtual reality learning programs are discussed. PMID:21086871

  2. Compact imaging spectrometer utilizing immersed gratings

    DOEpatents

    Lerner, Scott A.

    2005-12-20

    A compact imaging spectrometer comprising an entrance slit for directing light, lens means for receiving the light, refracting the light, and focusing the light; an immersed diffraction grating that receives the light from the lens means and defracts the light, the immersed diffraction grating directing the detracted light back to the lens means; and a detector that receives the light from the lens means.

  3. The Two-Way Immersion Toolkit

    ERIC Educational Resources Information Center

    Howard, Elizabeth; Sugarman, Julie; Perdomo, Marleny; Adger, Carolyn Temple

    2005-01-01

    This Toolkit is meant to be a resource for teachers, parents, and administrators involved with two-way immersion (TWI) programs, particularly those at the elementary level. Two-way immersion is a form of dual language instruction that brings together students from two native language groups for language, literacy, and academic content instruction…

  4. Immersive 3D Geovisualization in Higher Education

    ERIC Educational Resources Information Center

    Philips, Andrea; Walz, Ariane; Bergner, Andreas; Graeff, Thomas; Heistermann, Maik; Kienzler, Sarah; Korup, Oliver; Lipp, Torsten; Schwanghart, Wolfgang; Zeilinger, Gerold

    2015-01-01

    In this study, we investigate how immersive 3D geovisualization can be used in higher education. Based on MacEachren and Kraak's geovisualization cube, we examine the usage of immersive 3D geovisualization and its usefulness in a research-based learning module on flood risk, called GEOSimulator. Results of a survey among participating students…

  5. Research on evaluation techniques for immersive multimedia

    NASA Astrophysics Data System (ADS)

    Hashim, Aslinda M.; Romli, Fakaruddin Fahmi; Zainal Osman, Zosipha

    2013-03-01

    Nowadays Immersive Multimedia covers most usage in tremendous ways, such as healthcare/surgery, military, architecture, art, entertainment, education, business, media, sport, rehabilitation/treatment and training areas. Moreover, the significant of Immersive Multimedia to directly meet the end-users, clients and customers needs for a diversity of feature and purpose is the assembly of multiple elements that drive effective Immersive Multimedia system design, so evaluation techniques is crucial for Immersive Multimedia environments. A brief general idea of virtual environment (VE) context and `realism' concept that formulate the Immersive Multimedia environments is then provided. This is followed by a concise summary of the elements of VE assessment technique that is applied in Immersive Multimedia system design, which outlines the classification space for Immersive Multimedia environments evaluation techniques and gives an overview of the types of results reported. A particular focus is placed on the implications of the Immersive Multimedia environments evaluation techniques in relation to the elements of VE assessment technique, which is the primary purpose of producing this research. The paper will then conclude with an extensive overview of the recommendations emanating from the research.

  6. Novel contact hole reticle design for enhanced lithography process window in IC manufacturing

    NASA Astrophysics Data System (ADS)

    Chang, Chung-Hsing

    2004-10-01

    For 90nm node generation, 65nm, and beyond, dark field mask types such as contact-hole, via, and trench patterns that all are very challenging to print with satisfactory process windows for day-to-day lithography manufacturing. Resolution enhancement technology (RET) masks together with ArF high numerical aperture (NA) scanners have been recognized as the inevitable choice of method for 65nm node manufacturing. Among RET mask types, the alternating phase shifting mask (AltPSM) is one of the well-known strong enhancement techniques. However, AltPSM can have a very strong optical proximity effect that comes with the use of small on-axis illumination sigma setting. For very dense contact features, it may be possible for AltPSM to overcome the phase conflict by limiting the mask design rules. But it is not feasible to resolve the inherent phase conflict for the semi-dense, semi-isolated and isolated contact areas. Hence the adoption of this strong enhancement technique for dark filed mask types in today"s IC manufacturing has been very limited. In this paper, we report a novel yet a very powerful design method to achieve contact and via masks printing for 90nm, 65nm, and beyond. We name our new mask design as: Novel Improved Contact-hole pattern Exposure PSM (NICE PSM) with off-axis illumination, such as QUASAR. This RET masks design can enhance the process window of isolated, semi-isolated contact hole and via hole patterns. The main concepts of NICE PSM with QUASAR off-axis illumination are analogous to the Super-FLEX pupil filter technology.

  7. Novel contact hole reticle design for enhanced lithography process window in IC manufacturing

    NASA Astrophysics Data System (ADS)

    Chang, Chung-Hsing

    2005-01-01

    For 90nm node generation, 65nm, and beyond, dark field mask types such as contact-hole, via, and trench patterns that all are very challenging to print with satisfactory process windows for day-to-day lithography manufacturing. Resolution enhancement technology (RET) masks together with ArF high numerical aperture (NA) scanners have been recognized as the inevitable choice of method for 65nm node manufacturing. Among RET mask types, the alternating phase shifting mask (AltPSM) is one of the well-known strong enhancement techniques. However AltPSM can have a very strong optical proximity effect that comes with the use of small on-axis illumination sigma setting. For very dense contact features, it may be possible for AltPSM to overcome the phase conflict by limiting the mask design rules. But it is not feasible to resolve the inherent phase conflict for the semi-dense, semi-isolated and isolated contact areas. Hence the adoption of this strong enhancement technique for dark filed mask types in today"s IC manufacturing has been very limited. In this paper, we present a novel yet a very powerful design method to achieve contact and via masks printing for 90nm, 65nm, and beyond. We name our new mask design as: Novel Improved Contact-hole pattern Exposure PSM (NICE PSM) with off-axis illumination, such as QUASAR. This RET masks design can enhance the process window of isolated, semi-isolated contact hole and via hole patterns. The main concepts of NICE PSM with QUASAR off-axis illumination are analogous to the Super-FLEX pupil filter technology.

  8. Depth of immersion as a determinant of the natriuresis of water immersion

    NASA Technical Reports Server (NTRS)

    Epstein, M.; Miller, M.; Schneider, N.

    1974-01-01

    The current study was undertaken to further assess the contribution of an immersion-induced hydrostatic pressure gradient on the redistribution of blood volume. The rate of sodium excretion by seated subjects was significantly increased by water immersion up to the chest and neck compared to waist immersion and controls. These results are consistent with the hypothesis that whereas immersion to the level of the diaphragm merely cancels the intravascular hydrostatic pressure gradient by providing an identical external gradient, immersion above the diaphragm level results in increased water pressure which tends to favor a shift in blood volume from the lower extremities.

  9. Compact imaging spectrometer utilizing immersed gratings

    DOEpatents

    Chrisp, Michael P.; Lerner, Scott A.; Kuzmenko, Paul J.; Bennett, Charles L.

    2007-07-03

    A compact imaging spectrometer with an immersive diffraction grating that compensates optical distortions. The imaging spectrometer comprises an entrance slit for transmitting light, means for receiving the light and directing the light, an immersion grating, and a detector array. The entrance slit, the means for receiving the light, the immersion grating, and the detector array are positioned wherein the entrance slit transmits light to the means for receiving the light and the means for receiving the light directs the light to the immersion grating and the immersion grating receives the light and directs the light to the means for receiving the light, and the means for receiving the light directs the light to the detector array.

  10. Tgfβ Signaling Directly Induces Arf Promoter Remodeling by a Mechanism Involving Smads 2/3 and p38 MAPK*

    PubMed Central

    Zheng, Yanbin; Zhao, Yi D.; Gibbons, Melissa; Abramova, Tatiana; Chu, Patricia Y.; Ash, John D.; Cunningham, John M.; Skapek, Stephen X.

    2010-01-01

    We have investigated how the Arf gene product, p19Arf, is activated by Tgfβ during mouse embryo development to better understand how this important tumor suppressor is controlled. Taking advantage of new mouse models, we provide genetic evidence that Arf lies downstream of Tgfβ signaling in cells arising from the Wnt1-expressing neural crest and that the anti-proliferative effects of Tgfβ depend on Arf in vivo. Tgfβ1, -2, and -3 (but not BMP-2, another member of the Tgfβ superfamily) induce p19Arf expression in wild type mouse embryo fibroblasts (MEFs), and they enhance Arf promoter activity in ArflacZ/lacZ MEFs. Application of chemical inhibitors of Smad-dependent and -independent pathways show that SB431542, a Tgfβ type I receptor (TβrI) inhibitor, and SB203580, a p38 MAPK inhibitor, impede Tgfβ2 induction of Arf. Genetic studies confirm the findings; transient knockdown of Smad2, Smad3, or p38 MAPK blunt Tgfβ2 effects, as does Cre recombinase treatment of Tgfbr2fl/fl MEFs to delete Tgfβ receptor II. Chromatin immunoprecipitation reveals that Tgfβ rapidly induces Smads 2/3 binding and histone H3 acetylation at genomic DNA proximal to Arf exon 1β. This is followed by increased RNA polymerase II binding and progressively increased Arf primary and mature transcripts from 24 through 72 h, indicating that increased transcription contributes to p19Arf increase. Last, Arf induction by oncogenic Ras depends on p38 MAPK but is independent of TβrI activation of Smad 2. These findings add to our understanding of how developmental and tumorigenic signals control Arf expression in vivo and in cultured MEFs. PMID:20826783

  11. Liftoff lithography of metals for extreme ultraviolet lithography mask absorber layer patterning

    NASA Astrophysics Data System (ADS)

    Lyons, Adam; Teki, Ranganath; Hartley, John

    2012-03-01

    The authors present a process for patterning Extreme Ultraviolet Lithography (EUVL) mask absorber metal using electron beam evaporation and bi-layer liftoff lithography. The Line Edge Roughness (LER) and Critical Dimension Uniformity (CDU) of patterned chrome absorber are determined for various chrome thicknesses on silicon substrates, and the viability of the method for use with nickel absorber and on EUVL masks is demonstrated. Scanning Electron Microscope (SEM) data is used with SuMMIT software to determine the absorber LER and CDU. The Lawrence Berkeley National Labs Actinic Inspection Tool (AIT) is used to verify the printability of the pattern down to 24nm half pitch. The effect of processing on the integrity of the mask multilayer is measured using an actinic reflectometer at the College of Nanoscale Science and Engineering.

  12. Throughput enhancement technique for MAPPER maskless lithography

    NASA Astrophysics Data System (ADS)

    Wieland, M. J.; Derks, H.; Gupta, H.; van de Peut, T.; Postma, F. M.; van Veen, A. H. V.; Zhang, Y.

    2010-03-01

    MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing in combination with high speed optical data transport for switching the electron beams. With 13,000 electron beams each delivering a current of 13nA on the wafer, a throughput of 10 wph is realized for 22nm node lithography. By clustering several of these systems together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV. The most mature and reliable electron source currently available that combines a high brightness, a high emission current and uniform emission is the dispenser cathode. For this electron source a reduced brightness of 106 A/m2SrV has been measured, with no restrictions on emission current. With this brightness however it is possible to realize a beam current of 0.3nA (@ 25nm spotsize), which is almost a factor 50 lower than the 13nA that is required for 10 wph. Three methods can be distinguished to increase the throughput: 1. Use an electron source with a 50× higher brightness 2. Increase the number of beams and lenses 50× 3. Patterned beams: Image multiple sub-beams with each projection lens MAPPER has selected option 3) 'Patterned beams' as the method to increase the beam current to 13nA. This because an electron source with a 50x higher brightness is simply not available at this time, and increasing the number of beams and lenses 50× leads to undesirable engineering issues. During the past years MAPPER has been developing the concept of 'Patterned beams'. By imaging 7×7 sub-beams per projection lens the beam current is increased to the required 13nA level. This technique will also be used to maintain throughput at 10 wph for smaller technology nodes by further increasing the number of sub-beams per projection lens. In this paper we will describe the electron optical design used to image these multiple sub-beams per lens, as well as

  13. A survey of advanced excimer optical imaging and lithography

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koichi; Suwa, Kyoichi

    1998-11-01

    The first item discussed in this paper is to estimate the future trend regarding minimum geometry and the optical parameters, such as NA and wavelength. Simulations based on aerial images are performed for the estimation. The resolution limit is defined as a minimum feature size which retains practical depth of focus (DOF). Pattern geometry is classified into two categories, which are dense lines and isolated lines. Available wavelengths are assumed to be KrF excimer laser (λ=248 nm), ArF excimer laser (λ=193 nm) and F2 excimer laser (λ=157 nm). Based upon the simulation results, the resolution limit is estimated for each geometry and each wavelength. The second item is to survey ArF optics. At present, the ArF excimer laser is regarded as one of the most promising candidates as a next-generation light source. Discussions are ranging over some critical issues. The lifetime of ArF optics supposedly limited by the radiation compaction of silica glass is estimated in comparison with KrF optics. Availability of calcium fluoride (CaF2) is also discussed. As a designing issue, a comparative study is made about the optical configuration, dioptric or catadioptric. In the end, our resist-based performance is shown.

  14. The Application of Silicon Rich Nitride Films for Use as Deep-Ultraviolet Lithography Phase-Shifting Masks

    NASA Astrophysics Data System (ADS)

    Jiang, Zhong-Tao; Yamaguchi, Tomuo; Ohshimo, Kentaro; Aoyama, Mitsuru; Asinovsky, Leo

    1998-02-01

    Silicon rich nitride (SiRN) film prepared by plasma enhanced chemical vapor deposition (PECVD) for use as the phase-shifting mask for Deep-ultraviolet (UV) lithography has been developed. Optical properties and compositional characterizations of the SiRN films using Auger electron spectroscopy (AES) and spectroscopic ellipsometry (SE) combined with an empirical dielectric function (EDF), as well as phase-shifting mask simulation show that the SiRN is feasible for use in the application of single layer halftone phase-shifting mask (SLHTPSM) in the Deep-UV range. Optical constants of n ≈ 2.5 and k < 0.6 at 193 nm were realized by approaching the N/Si composition to the stoichiometric ratio of Si3N4. The deposition conditions for the films having the transmittance of 5 - 10% with a 180° phase shift at 193 nm (ArF) have been determined. Short wavelength extrapolation by EDF best-fit parameters based on a proper film-stack model provides a potential method to characterize the optical properties of amorphous SiRN down to about 190 nm, which is outside the range of most commercial SE's.

  15. Long noncoding RNA, polycomb, and the ghosts haunting INK4b-ARF-INK4a expression.

    PubMed

    Aguilo, Francesca; Zhou, Ming-Ming; Walsh, Martin J

    2011-08-15

    Polycomb group proteins (PcG) function as transcriptional repressors of gene expression. The important role of PcG in mediating repression of the INK4b-ARF-INK4a locus, by directly binding to the long noncoding RNA (lncRNA) transcript antisense noncoding RNA in the INK4 locus (ANRIL), was recently shown. INK4b-ARF-INK4a encodes 3 tumor-suppressor proteins, p15(INK4b), p14(ARF), and p16(INK4a), and its transcription is a key requirement for replicative or oncogene-induced senescence and constitutes an important barrier for tumor growth. ANRIL gene is transcribed in the antisense orientation of the INK4b-ARF-INK4a gene cluster, and different single-nucleotide polymorphisms are associated with increased susceptibility to several diseases. Although lncRNA-mediated regulation of INK4b-ARF-INK4a gene is not restricted to ANRIL, both polycomb repressive complex-1 (PRC1) and -2 (PRC2) interact with ANRIL to form heterochromatin surrounding the INK4b-ARF-INK4a locus, leading to its repression. This mechanism would provide an increased advantage for bypassing senescence, sustaining the requirements for the proliferation of stem and/or progenitor cell populations or inappropriately leading to oncogenesis through the aberrant saturation of the INK4b-ARF-INK4a locus by PcG complexes. In this review, we summarize recent findings on the underlying epigenetic mechanisms that link PcG function with ANRIL, which impose gene silencing to control cellular homeostasis as well as cancer development. PMID:21828241

  16. Long Noncoding RNA, Polycomb, and the Ghosts Haunting INK4b-ARF-INK4a Expression

    PubMed Central

    Aguilo, Francesca; Zhou, Ming-Ming; Walsh, Martin J.

    2012-01-01

    Polycomb group proteins (PcG) function as transcriptional repressors of gene expression. The important role of PcG in mediating repression of the INK4b-ARF-INK4a locus, by directly binding to the long noncoding RNA (lncRNA) transcript antisense noncoding RNA in the INK4 locus (ANRIL), was recently shown. INK4b-ARF-INK4a encodes 3 tumor-suppressor proteins, p15INK4b, p14ARF, and p16INK4a, and its transcription is a key requirement for replicative or oncogene-induced senescence and constitutes an important barrier for tumor growth. ANRIL gene is transcribed in the antisense orientation of the INK4b-ARF-INK4a gene cluster, and different single-nucleotide polymorphisms are associated with increased susceptibility to several diseases. Although lncRNA-mediated regulation of INK4b-ARF-INK4a gene is not restricted to ANRIL, both polycomb repressive complex-1 (PRC1) and -2 (PRC2) interact with ANRIL to form heterochromatin surrounding the INK4b-ARF-INK4a locus, leading to its repression. This mechanism would provide an increased advantage for bypassing senescence, sustaining the requirements for the proliferation of stem and/or progenitor cell populations or inappropriately leading to oncogenesis through the aberrant saturation of the INK4b-ARF-INK4a locus by PcG complexes. In this review, we summarize recent findings on the underlying epigenetic mechanisms that link PcG function with ANRIL, which impose gene silencing to control cellular homeostasis as well as cancer development. PMID:21828241

  17. Direct three-dimensional patterning using nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Li, Mingtao; Chen, Lei; Chou, Stephen Y.

    2001-05-01

    We demonstrated that nanoimprint lithography (NIL) can create three-dimensional patterns, sub-40 nm T-gates, and air-bridge structures, in a single step imprint in polymer and metal by lift-off. A method based on electron beam lithography and reactive ion etching was developed to fabricate NIL molds with three-dimensional protrusions. The low-cost and high-throughput nanoimprint lithography for three-dimensional nanostructures has many significant applications such as monolithic microwave integrated circuits and nanoelectromechanical system.

  18. Lithography trends based on projections of the ITRS (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Arden, Wolfgang

    2005-06-01

    The microelectronic industry has gone through an enormous technical evolution in the last four decades. Both the tech-nological and economic challenges of microelectronics were increasing consistently in the past few years. This paper discusses the future trends in micro- and nano-technologies with special emphasis on lithography. The trends of minia-turization will be sketched with reference to the International Technology Roadmap for Semiconductors (ITRS). After a description of general trends in technology node timing, an overview will be given on the future lithography require-ments and the technical solutions including options for post-optical lithography as, for example, Extreme UV.

  19. High resolution fabrication of nanostructures using controlled proximity nanostencil lithography

    NASA Astrophysics Data System (ADS)

    Jain, T.; Aernecke, M.; Liberman, V.; Karnik, R.

    2014-02-01

    Nanostencil lithography has a number of distinct benefits that make it an attractive nanofabrication processes, but the inability to fabricate features with nanometer precision has significantly limited its utility. In this paper, we describe a nanostencil lithography process that provides sub-15 nm resolution even for 40-nm thick structures by using a sacrificial layer to control the proximity between the stencil and substrate, thereby enhancing the correspondence between nanostencil patterns and fabricated nanostructures. We anticipate that controlled proximity nanostencil lithography will provide an environmentally stable, clean, and positive-tone candidate for fabrication of nanostructures with high resolution.

  20. Workshop on compact storage ring technology: applications to lithography

    SciTech Connect

    Not Available

    1986-05-30

    Project planning in the area of x-ray lithography is discussed. Three technologies that are emphasized are the light source, the lithographic technology, and masking technology. The needs of the semiconductor industry in the lithography area during the next decade are discussed, particularly as regards large scale production of high density dynamic random access memory devices. Storage ring parameters and an overall exposure tool for x-ray lithography are addressed. Competition in this area of technology from Germany and Japan is discussed briefly. The design of a storage ring is considered, including lattice design, magnets, and beam injection systems. (LEW)

  1. Resolution considerations in MeV ion microscopy and lithography

    NASA Astrophysics Data System (ADS)

    Norarat, Rattanaporn; Whitlow, Harry J.

    2015-04-01

    There a disparity between the way the resolution is specified in microscopy and lithography using light compared to MeV ion microscopy and lithography. In this work we explore the implications of the way the resolution is defined with a view to answering the questions; how are the resolving powers in MeV ion microscopy and lithography relate to their optical counterparts? and how do different forms of point spread function affect the modulation transfer function and the sharpness of the edge profile?

  2. Thermoplastic microcantilevers fabricated by nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Greve, Anders; Keller, Stephan; Vig, Asger L.; Kristensen, Anders; Larsson, David; Yvind, Kresten; Hvam, Jørn M.; Cerruti, Marta; Majumdar, Arunava; Boisen, Anja

    2010-01-01

    Nanoimprint lithography has been exploited to fabricate micrometre-sized cantilevers in thermoplastic. This technique allows for very well defined microcantilevers and gives the possibility of embedding structures into the cantilever surface. The microcantilevers are fabricated in TOPAS and are up to 500 µm long, 100 µm wide, and 4.5 µm thick. Some of the cantilevers have built-in ripple surface structures with heights of 800 nm and pitches of 4 µm. The yield for the cantilever fabrication is 95% and the initial out-of-plane bending is below 10 µm. The stiffness of the cantilevers is measured by deflecting the cantilever with a well-characterized AFM probe. An average stiffness of 61.3 mN m-1 is found. Preliminary tests with water vapour indicate that the microcantilevers can be used directly for vapour sensing applications and illustrate the influence of surface structuring of the cantilevers.

  3. Photoresist composition for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  4. Nanoscale plasmonic stamp lithography on silicon.

    PubMed

    Liu, Fenglin; Luber, Erik J; Huck, Lawrence A; Olsen, Brian C; Buriak, Jillian M

    2015-02-24

    Nanoscale lithography on silicon is of interest for applications ranging from computer chip design to tissue interfacing. Block copolymer-based self-assembly, also called directed self-assembly (DSA) within the semiconductor industry, can produce a variety of complex nanopatterns on silicon, but these polymeric films typically require transformation into functional materials. Here we demonstrate how gold nanopatterns, produced via block copolymer self-assembly, can be incorporated into an optically transparent flexible PDMS stamp, termed a plasmonic stamp, and used to directly functionalize silicon surfaces on a sub-100 nm scale. We propose that the high intensity electric fields that result from the localized surface plasmons of the gold nanoparticles in the plasmonic stamps upon illumination with low intensity green light, lead to generation of electron-hole pairs in the silicon that drive spatially localized hydrosilylation. This approach demonstrates how localized surface plasmons can be used to enable functionalization of technologically relevant surfaces with nanoscale control. PMID:25654172

  5. Lithography process window analysis with calibrated model

    NASA Astrophysics Data System (ADS)

    Zhou, Wenzhan; Yu, Jin; Lo, James; Liu, Johnson

    2004-05-01

    As critical-dimension shrink below 0.13 μm, the SPC (Statistical Process Control) based on CD (Critical Dimension) control in lithography process becomes more difficult. Increasing requirements of a shrinking process window have called on the need for more accurate decision of process window center. However in practical fabrication, we found that systematic error introduced by metrology and/or resist process can significantly impact the process window analysis result. Especially, when the simple polynomial functions are used to fit the lithographic data from focus exposure matrix (FEM), the model will fit these systematic errors rather than filter them out. This will definitely impact the process window analysis and determination of the best process condition. In this paper, we proposed to use a calibrated first principle model to do process window analysis. With this method, the systematic metrology error can be filtered out efficiently and give a more reasonable window analysis result.

  6. Nanoimprint lithography using disposable biomass template

    NASA Astrophysics Data System (ADS)

    Hanabata, Makoto; Takei, Satoshi; Sugahara, Kigen; Nakajima, Shinya; Sugino, Naoto; Kameda, Takao; Fukushima, Jiro; Matsumoto, Yoko; Sekiguchi, Atsushi

    2016-04-01

    A novel nanoimprint lithography process using disposable biomass template having gas permeability was investigated. It was found that a disposable biomass template derived from cellulose materials shows an excellent gas permeability and decreases transcriptional defects in conventional templates such as quartz, PMDS, DLC that have no gas permeability. We believe that outgasses from imprinted materials are easily removed through the template. The approach to use a cellulose for template material is suitable as the next generation of clean separation technology. It is expected to be one of the defect-less thermal nanoimprint lithographic technologies. It is also expected that volatile materials and solvent including materials become available that often create defects and peelings in conventional temples that have no gas permeability.

  7. Novel electrostatic column for ion projection lithography

    SciTech Connect

    Chalupka, A.; Stengl, G.; Buschbeck, H.; Lammer, G.; Vonach, H.; Fischer, R.; Hammel, E.; Loeschner, H.; Nowak, R.; Wolf, P. ); Finkelstein, W.; Hill, R.W. ); Berry, I.L. ); Harriott, L.R. ); Melngailis, J. ); Randall, J.N. ); Wolfe, J.C. ); Stroh, H.; Wollnik, H. ); Mondelli, A.A.; Petillo, J.J. ); Leung, K. (Lawrence Berkeley Laboratory, University of Californi

    1994-11-01

    Ion projection lithography (IPL) is being considered for high volume sub-0.25-[mu]m lithography. A novel ion-optical column has been designed for exposing 20[times]20 mm[sup 2] fields at 3[times] reduction from stencil mask to wafer substrates. A diverging lens is realized by using the stencil mask as the first electrode of the ion-optical column. The second and third electrode form an accelerating field lens. The aberrations of the first two lenses (diverging lens and field lens) are compensated by an asymmetric Einzel lens projecting an ion image of the stencil mask openings onto the wafer substrate with better than 2 mrad telecentricity. Less than 30 nm intrafield distortion was calculated within 20[times]20 mm[sup 2] exposure fields. The calculation uncertainty is estimated to be about 10 nm. The calculation holds for helium ions with [approx]10 keV ion energy at the stencil mask and 150 keV ion energy at the wafer plane. A virtual ion source size of 10 [mu]m has been assumed. The calculated chromatic aberrations are less than 60 nm, assuming 6 eV energy spread of the ions extracted from a duoplasmatron source. Recently a multicusp ion source has been developed for which preliminary results indicate an energy spread of less than 2 eV. Thus, with a multicusp source chromatic aberrations of less than 20 nm are to be expected. The ion energy at the crossover between the field lens and the asymmetric Einzel lens is 200 keV. Therefore, stochastic space charge induced degradations in resolution can be kept sufficiently low. The divergence of the ion image projected to the wafer plane is less than 2 mrad. Thus, the usable'' depth of focus for the novel ion optics is in the order of 10 [mu]m.

  8. Integrating nanosphere lithography in device fabrication

    NASA Astrophysics Data System (ADS)

    Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

    2016-03-01

    This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

  9. Micro-optics and lithography simulation are key enabling technologies for shadow printing lithography in mask aligners

    NASA Astrophysics Data System (ADS)

    Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna; Noell, Wilfried

    2015-02-01

    Mask aligners are lithographic tools used to transfer a pattern of microstructures by shadow printing lithography onto a planar wafer. Contact lithography allows us to print large mask fields with sub-micron resolution, but requires frequent mask cleaning. Thus, contact lithography is used for small series of wafer production. Proximity lithography, where the mask is located at a distance of typically 30-100 μm above the wafer, provides a resolution of approximately 3-5 μm, limited by diffraction effects. Proximity lithography in mask aligners is a very cost-efficient method widely used in semiconductor, packaging and MEMS manufacturing industry for high-volume production. Micro-optics plays a key role in improving the performance of shadow printing lithography in mask aligners. Refractive or diffractive micro-optics allows us to efficiently collect the light from the light source and to precisely shape the illumination light (customized illumination). Optical proximity correction and phase shift mask technology allow us to influence the diffraction effects in the aerial image and to enhance resolution and critical dimension. The paper describes the status and future trends of shadow printing lithography in mask aligners and the decisive role of micro-optics as key enabling technology.

  10. Photogrammetric Applications of Immersive Video Cameras

    NASA Astrophysics Data System (ADS)

    Kwiatek, K.; Tokarczyk, R.

    2014-05-01

    The paper investigates immersive videography and its application in close-range photogrammetry. Immersive video involves the capture of a live-action scene that presents a 360° field of view. It is recorded simultaneously by multiple cameras or microlenses, where the principal point of each camera is offset from the rotating axis of the device. This issue causes problems when stitching together individual frames of video separated from particular cameras, however there are ways to overcome it and applying immersive cameras in photogrammetry provides a new potential. The paper presents two applications of immersive video in photogrammetry. At first, the creation of a low-cost mobile mapping system based on Ladybug®3 and GPS device is discussed. The amount of panoramas is much too high for photogrammetric purposes as the base line between spherical panoramas is around 1 metre. More than 92 000 panoramas were recorded in one Polish region of Czarny Dunajec and the measurements from panoramas enable the user to measure the area of outdoors (adverting structures) and billboards. A new law is being created in order to limit the number of illegal advertising structures in the Polish landscape and immersive video recorded in a short period of time is a candidate for economical and flexible measurements off-site. The second approach is a generation of 3d video-based reconstructions of heritage sites based on immersive video (structure from immersive video). A mobile camera mounted on a tripod dolly was used to record the interior scene and immersive video, separated into thousands of still panoramas, was converted from video into 3d objects using Agisoft Photoscan Professional. The findings from these experiments demonstrated that immersive photogrammetry seems to be a flexible and prompt method of 3d modelling and provides promising features for mobile mapping systems.

  11. Survey of projection-based immersive displays

    NASA Astrophysics Data System (ADS)

    Wright, Dan

    2000-05-01

    Projection-based immersive displays are rapidly becoming the visualization system of choice for applications requiring the comprehension of complex datasets and the collaborative sharing of insights. The wide variety of display configurations can be grouped into five categories: benches, flat-screen walls, curved-screen theaters, concave-screen domes and spatially-immersive rooms. Each have their strengths and weaknesses with the appropriateness of each dependent on one's application and budget. The paper outlines the components common to all projection-based displays and describes the characteristics of each particular category. Key image metrics, implementation considerations and immersive display trends are also considered.

  12. Secretion of soluble vascular endothelial growth factor receptor 1 (sVEGFR1/sFlt1) requires Arf1, Arf6, and Rab11 GTPases.

    PubMed

    Jung, Jae-Joon; Tiwari, Ajit; Inamdar, Shivangi M; Thomas, Christie P; Goel, Apollina; Choudhury, Amit

    2012-01-01

    The soluble form of vascular endothelial growth factor receptor 1 (sVEGFR-1/sFlt1) is generated by alternative splicing of the FLT1 gene. Secretion of sFlt1 from endothelial cells plays an important role in blood vessel sprouting and morphogenesis. However, excess sFlt1 secretion is associated with diseases such as preeclampsia and chronic kidney disease. To date, the secretory transport process involved in the secretion of sFlt1 is poorly understood. In the present study, we investigated the itinerary of sFlt1 trafficking along the secretory pathway. To understand the timecourse of sFlt1 secretion, endothelial cells stably expressing sFlt1 were metabolically radiolabeled with [(35)S]-methionine and cysteine. Our results indicate that after initial synthesis the levels of secreted [(35)S]-sFlt1 in the extracellular medium peaks at 8 hours. Treatment with brefeldin A (BFA), a drug which blocks trafficking between the endoplasmic reticulum (ER) and the Golgi complex, inhibited extracellular release of sFlt1 suggesting that ER to Golgi and intra-Golgi trafficking of sFlt1 are essential for its secretion. Furthermore, we show that ectopic expression of dominant-negative mutant forms of Arf1, Arf6, and Rab11 as well as siRNA-mediated knockdown of these GTPases block secretion of sFlt1 during normoxic and hypoxic conditions suggesting role for these small GTPases. This work is the first to report role of regulatory proteins involved in sFlt1 trafficking along the secretory pathway and may provide insights and new molecular targets for the modulation of sFlt-1 release during physiological and pathological conditions. PMID:22962618

  13. ARF6–JIP3/4 regulate endosomal tubules for MT1-MMP exocytosis in cancer invasion

    PubMed Central

    Marchesin, Valentina; Castro-Castro, Antonio; Lodillinsky, Catalina; Castagnino, Alessia; Cyrta, Joanna; Bonsang-Kitzis, Hélène; Fuhrmann, Laetitia; Irondelle, Marie; Infante, Elvira; Montagnac, Guillaume; Reyal, Fabien; Vincent-Salomon, Anne

    2015-01-01

    Invasion of cancer cells into collagen-rich extracellular matrix requires membrane-tethered membrane type 1–matrix metalloproteinase (MT1-MMP) as the key protease for collagen breakdown. Understanding how MT1-MMP is delivered to the surface of tumor cells is essential for cancer cell biology. In this study, we identify ARF6 together with c-Jun NH2-terminal kinase–interacting protein 3 and 4 (JIP3 and JIP4) effectors as critical regulators of this process. Silencing ARF6 or JIP3/JIP4 in breast tumor cells results in MT1-MMP endosome mispositioning and reduces MT1-MMP exocytosis and tumor cell invasion. JIPs are recruited by Wiskott-Aldrich syndrome protein and scar homologue (WASH) on MT1-MMP endosomes on which they recruit dynein–dynactin and kinesin-1. The interaction of plasma membrane ARF6 with endosomal JIPs coordinates dynactin–dynein and kinesin-1 activity in a tug-of-war mechanism, leading to MT1-MMP endosome tubulation and exocytosis. In addition, we find that ARF6, MT1-MMP, and kinesin-1 are up-regulated in high-grade triple-negative breast cancers. These data identify a critical ARF6–JIP–MT1-MMP–dynein–dynactin–kinesin-1 axis promoting an invasive phenotype of breast cancer cells. PMID:26504170

  14. Loss of ARF sensitizes transgenic BRAFV600E mice to UV-induced melanoma via suppression of XPC

    PubMed Central

    Luo, Chi; Sheng, Jinghao; Hu, Miaofen G.; Haluska, Frank G.; Cui, Rutao; Xu, Zhengping; Tsichlis, Philip N.; Hu, Guo-fu; Hinds, Philip W.

    2013-01-01

    Both genetic mutations and ultraviolet (UV) irradiation can predispose individuals to melanoma. Although BRAFV600E is the most prevalent oncogene in melanoma, the BRAFV600E mutant is not sufficient to induce tumors in vivo. Mutation at the CDKN2A locus is another melanoma-predisposing event that can disrupt the function of both p16INK4a and ARF. Numerous studies have focused on the role of p16INK4a in melanoma, but the involvement of ARF, a well-known p53 activator, is still controversial. Using a transgenic BRAFV600E mouse model previously generated in our laboratory, we report that loss of ARF is able to enhance spontaneous melanoma formation and cause profound sensitivity to neonatal UVB exposure. Mechanistically, BRAFV600E and ARF deletion synergize to inhibit nucleotide excision repair by epigenetically repressing XPC and inhibiting the E2F4/DP1 complex. We suggest that the deletion of ARF promotes melanomagenesis not by abrogating p53 activation but by acting in concert with BRAFV600E to increase the load of DNA damage caused by UV irradiation. PMID:23650282

  15. ARF6-JIP3/4 regulate endosomal tubules for MT1-MMP exocytosis in cancer invasion.

    PubMed

    Marchesin, Valentina; Castro-Castro, Antonio; Lodillinsky, Catalina; Castagnino, Alessia; Cyrta, Joanna; Bonsang-Kitzis, Hélène; Fuhrmann, Laetitia; Irondelle, Marie; Infante, Elvira; Montagnac, Guillaume; Reyal, Fabien; Vincent-Salomon, Anne; Chavrier, Philippe

    2015-10-26

    Invasion of cancer cells into collagen-rich extracellular matrix requires membrane-tethered membrane type 1-matrix metalloproteinase (MT1-MMP) as the key protease for collagen breakdown. Understanding how MT1-MMP is delivered to the surface of tumor cells is essential for cancer cell biology. In this study, we identify ARF6 together with c-Jun NH2-terminal kinase-interacting protein 3 and 4 (JIP3 and JIP4) effectors as critical regulators of this process. Silencing ARF6 or JIP3/JIP4 in breast tumor cells results in MT1-MMP endosome mispositioning and reduces MT1-MMP exocytosis and tumor cell invasion. JIPs are recruited by Wiskott-Aldrich syndrome protein and scar homologue (WASH) on MT1-MMP endosomes on which they recruit dynein-dynactin and kinesin-1. The interaction of plasma membrane ARF6 with endosomal JIPs coordinates dynactin-dynein and kinesin-1 activity in a tug-of-war mechanism, leading to MT1-MMP endosome tubulation and exocytosis. In addition, we find that ARF6, MT1-MMP, and kinesin-1 are up-regulated in high-grade triple-negative breast cancers. These data identify a critical ARF6-JIP-MT1-MMP-dynein-dynactin-kinesin-1 axis promoting an invasive phenotype of breast cancer cells. PMID:26504170

  16. Detection of specific antibodies to HCV-ARF/CORE+1 protein in patients treated with pegylated interferon plus ribavirin.

    PubMed

    Karamitros, T; Kakkanas, A; Katsoulidou, A; Sypsa, V; Dalagiorgou, G; Mavromara, P; Hatzakis, A

    2012-03-01

    Hepatitis C virus (HCV) infection is a major cause for chronic liver disease and hepatocellular carcinoma. The HCV-ARF/core+1 protein is an alternative product of HCV core-encoding sequence of unknown biological function. Highly purified HCV core and ARF/core+1 recombinant proteins from HCV genotype 1a and HCV-ARF/core+1 recombinant protein from HCV genotype 3a were expressed in Escherichia coli. Using an enzyme-linked immunosorbent assay, we assessed the prevalence of anti-ARF/core+1 antibodies in 90 chronic hepatitis C patients infected with HCV genotypes 1a/1b or 3a, treated with pegylated interferon (Peg-IFN-a-2a) plus ribavirin. Samples derived from 92 healthy blood donors were used as negative controls. All HCV-RNA-positive serum samples reacted with core 1a antigen, while 15 (37.5%) of 40 and 14 (28%) of 50 patients infected with HCV-1a/1b and HCV-3a, respectively, were found to have anti-ARF/core+1 antibodies into their serum before treatment initiation. These antibodies were persistently present during treatment follow-up and linked to elevated levels of HCV-RNA at baseline. PMID:22329372

  17. Structural Insights into Arl1-Mediated Targeting of the Arf-GEF BIG1 to the trans-Golgi.

    PubMed

    Galindo, Antonio; Soler, Nicolas; McLaughlin, Stephen H; Yu, Minmin; Williams, Roger L; Munro, Sean

    2016-07-19

    The GTPase Arf1 is the major regulator of vesicle traffic at both the cis- and trans-Golgi. Arf1 is activated at the cis-Golgi by the guanine nucleotide exchange factor (GEF) GBF1 and at the trans-Golgi by the related GEF BIG1 or its paralog, BIG2. The trans-Golgi-specific targeting of BIG1 and BIG2 depends on the Arf-like GTPase Arl1. We find that Arl1 binds to the dimerization and cyclophilin binding (DCB) domain in BIG1 and report a crystal structure of human Arl1 bound to this domain. Residues in the DCB domain that bind Arl1 are required for BIG1 to locate to the Golgi in vivo. DCB domain-binding residues in Arl1 have a distinct conformation from those in known Arl1-effector complexes, and this plasticity allows Arl1 to interact with different effectors of unrelated structure. The findings provide structural insight into how Arf1 GEFs, and hence active Arf1, achieve their correct subcellular distribution. PMID:27373159

  18. Quantitative assessment of higher-order chromatin structure of the INK4/ARF locus in human senescent cells.

    PubMed

    Hirosue, Akiyuki; Ishihara, Ko; Tokunaga, Kazuaki; Watanabe, Takehisa; Saitoh, Noriko; Nakamoto, Masafumi; Chandra, Tamir; Narita, Masashi; Shinohara, Masanori; Nakao, Mitsuyoshi

    2012-06-01

    Somatic cells can be reset to oncogene-induced senescent (OIS) cells or induced pluripotent stem (iPS) cells by expressing specified factors. The INK4/ARF locus encodes p15(INK4b) , ARF, and p16(INK4a) genes in human chromosome 9p21, the products of which are known as common key reprogramming regulators. Compared with growing fibroblasts, the CCCTC-binding factor CTCF is remarkably up-regulated in iPS cells with silencing of the three genes in the locus and is reversely down-regulated in OIS cells with high expression of p15(INK4b) and p16(INK4a) genes. There are at least three CTCF-enriched sites in the INK4/ARF locus, which possess chromatin loop-forming activities. These CTCF-enriched sites and the p16(INK4a) promoter associate to form compact chromatin loops in growing fibroblasts, while CTCF depletion disrupts the loop structure. Interestingly, the loose chromatin structure is found in OIS cells. In addition, the INK4/ARF locus has an intermediate type of chromatin compaction in iPS cells. These results suggest that senescent cells have distinct higher-order chromatin signature in the INK4/ARF locus. PMID:22340434

  19. Pesticide residue analysis and its relationship to hazard characterisation (ADI/ARfD) and intake estimations (NEDI/NESTI).

    PubMed

    Renwick, Andrew G

    2002-10-01

    Over 800 pesticides are currently approved for use in one or more EU countries. The maximum residue levels (MRL) for agricultural pesticides are derived from field trials conducted under good agricultural practice (GAP). The MRL is a legally enforceable limit related to GAP. The results from field trials would only be used to establish MRLs if the estimated intake of residues did not exceed the acceptable daily intake (ADI) or acute reference dose (ARfD). However, the MRL is not linked to the ADI or ARfD, and could result in intakes considerably below the ADI/ARfD. This disconnection between hazard characterisation (ADI/ARfD) and potential exposure assessment (MRL) means that risk characterisation of pesticide residues is less transparent than for other chemicals present in human food. Residue levels at or below the MRL would not give intakes that exceed the ADI/ARfD but, despite this, there is public concern over such residues. Residue levels above the MRL have to be analysed on a case-by-case basis to determine if the intake could exceed the health-based limits. Other causes of public concern, such as the presence of multiple residues, are currently under investigation. PMID:12400449

  20. Impacts of cost functions on inverse lithography patterning.

    PubMed

    Yu, Jue-Chin; Yu, Peichen

    2010-10-25

    For advanced CMOS processes, inverse lithography promises better patterning fidelity than conventional mask correction techniques due to a more complete exploration of the solution space. However, the success of inverse lithography relies highly on customized cost functions whose design and know-how have rarely been discussed. In this paper, we investigate the impacts of various objective functions and their superposition for inverse lithography patterning using a generic gradient descent approach. We investigate the most commonly used objective functions, which are the resist and aerial images, and also present a derivation for the aerial image contrast. We then discuss the resulting pattern fidelity and final mask characteristics for simple layouts with a single isolated contact and two nested contacts. We show that a cost function composed of a dominant resist-image component and a minor aerial-image or image-contrast component can achieve a good mask correction and contour targets when using inverse lithography patterning. PMID:21164674

  1. The economic impact of EUV lithography on critical process modules

    NASA Astrophysics Data System (ADS)

    Mallik, Arindam; Horiguchi, Naoto; Bömmels, Jürgen; Thean, Aaron; Barla, Kathy; Vandenberghe, Geert; Ronse, Kurt; Ryckaert, Julien; Mercha, Abdelkarim; Altimime, Laith; Verkest, Diederik; Steegen, An

    2014-04-01

    Traditionally, semiconductor density scaling has been supported by optical lithography. The ability of the exposure tools to provide shorter exposure wavelengths or higher numerical apertures have allowed optical lithography be on the forefront of dimensional scaling for the semiconductor industry. Unfortunately, the roadmap for lithography is currently at a juncture of a major paradigm shift. EUV Lithography is steadily maturing but not fully ready to be inserted into HVM. Unfortunately, there are no alternative litho candidates on the horizon that can take over from 193nm. As a result, it is important to look into the insertion point of EUV that would be ideal for the industry from an economical perspective. This paper details the benefit observed by such a transition. Furthermore, it looks into such detail with an EUV throughput sensitivity study.

  2. Role of ARF6 in internalization of metal-binding proteins, metallothionein and transferrin, and cadmium-metallothionein toxicity in kidney proximal tubule cells

    SciTech Connect

    Wolff, Natascha A.; Lee, Wing-Kee; Abouhamed, Marouan

    2008-07-01

    Filtered metal-protein complexes, such as cadmium-metallothionein-1 (CdMT-1) or transferrin (Tf) are apically endocytosed partly via megalin/cubilin by kidney proximal tubule (PT) cells where CdMT-1 internalization causes apoptosis. Small GTPase ARF (ADP-ribosylation factor) proteins regulate endocytosis and vesicular trafficking. We investigated roles of ARF6, which has been shown to be involved in internalization of ligands and endocytic trafficking in PT cells, following MT-1/CdMT-1 and Tf uptake by PT cells. WKPT-0293 Cl.2 cells derived from rat PT S1 segment were transfected with hemagglutinin-tagged wild-type (ARF6-WT) or dominant negative (ARF6-T27N) forms of ARF6. Using immunofluorescence, endogenous ARF6 was associated with the plasma membrane (PM) as well as juxtanuclear and co-localized with Rab5a and Rab11 involved in early and recycling endosomal trafficking. Immunofluorescence staining of megalin showed reduced surface labelling in ARF6 dominant negative (ARF6-DN) cells. Intracellular Alexa Fluor 546-conjugated MT-1 uptake was reduced in ARF6-DN cells and CdMT-1 (14.8 {mu}M for 24 h) toxicity was significantly attenuated from 27.3 {+-} 3.9% in ARF6-WT to 11.1 {+-} 4.0% in ARF6-DN cells (n = 6, P < 0.02). Moreover, reduced Alexa Fluor 546-conjugated Tf uptake was observed in ARF-DN cells (75.0 {+-} 4.6% versus 3.9 {+-} 3.9% of ARF6-WT cells, n = 3, P < 0.01) and/or remained near the PM (89.3 {+-} 5. 6% versus 45.2 {+-} 14.3% of ARF6-WT cells, n = 3, P < 0.05). In conclusion, the data support roles for ARF6 in receptor-mediated endocytosis and trafficking of MT-1/Tf to endosomes/lysosomes and CdMT-1 toxicity of PT cells.

  3. Manipulation of heat-diffusion channel in laser thermal lithography.

    PubMed

    Wei, Jingsong; Wang, Yang; Wu, Yiqun

    2014-12-29

    Laser thermal lithography is a good alternative method for forming small pattern feature size by taking advantage of the structural-change threshold effect of thermal lithography materials. In this work, the heat-diffusion channels of laser thermal lithography are first analyzed, and then we propose to manipulate the heat-diffusion channels by inserting thermal conduction layers in between channels. Heat-flow direction can be changed from the in-plane to the out-of-plane of the thermal lithography layer, which causes the size of the structural-change threshold region to become much smaller than the focused laser spot itself; thus, nanoscale marks can be obtained. Samples designated as "glass substrate/thermal conduction layer/thermal lithography layer (100 nm)/thermal conduction layer" are designed and prepared. Chalcogenide phase-change materials are used as thermal lithography layer, and Si is used as thermal conduction layer to manipulate heat-diffusion channels. Laser thermal lithography experiments are conducted on a home-made high-speed rotation direct laser writing setup with 488 nm laser wavelength and 0.90 numerical aperture of converging lens. The writing marks with 50-60 nm size are successfully obtained. The mark size is only about 1/13 of the focused laser spot, which is far smaller than that of the light diffraction limit spot of the direct laser writing setup. This work is useful for nanoscale fabrication and lithography by exploiting the far-field focusing light system. PMID:25607209

  4. Immersion diuresis without expected suppression of vasopressin

    NASA Technical Reports Server (NTRS)

    Keil, L. C.; Silver, J. E.; Wong, N.; Spaul, W. A.; Greenleaf, J. E.; Kravik, S. E.

    1984-01-01

    There is a shift of blood from the lower parts of the body to the thoracic circulation during bed rest, water immersion, and presumably during weightlessness. On earth, this central fluid shift is associated with a profound diuresis. However, the mechanism involved is not yet well understood. The present investigation is concerned with measurements regarding the plasma vasopressin, fluid, electrolyte, and plasma renin activity (PRA) responses in subjects with normal preimmersion plasma vasopressin (PVP) concentration. In the conducted experiments, PRA was suppressed significantly at 30 min of immersion and had declined by 74 percent by the end of the experiment. On the basis of previously obtained results, it appears that sodium excretion during immersion may be independent of aldosterone action. Experimental results indicate that PVP is not suppressed by water immersion in normally hydrated subjects and that other factors may be responsible for the diuresis.

  5. Exclusion of Integrins from CNS Axons Is Regulated by Arf6 Activation and the AIS

    PubMed Central

    Franssen, Elske H. P.; Zhao, Rong-Rong; Koseki, Hiroaki; Kanamarlapudi, Venkateswarlu; Hoogenraad, Casper C.

    2015-01-01

    Integrins are adhesion and survival molecules involved in axon growth during CNS development, as well as axon regeneration after injury in the peripheral nervous system (PNS). Adult CNS axons do not regenerate after injury, partly due to a low intrinsic growth capacity. We have previously studied the role of integrins in axon growth in PNS axons; in the present study, we investigate whether integrin mechanisms involved in PNS regeneration may be altered or lacking from mature CNS axons by studying maturing CNS neurons in vitro. In rat cortical neurons, we find that integrins are present in axons during initial growth but later become restricted to the somato-dendritic domain. We investigated how this occurs and whether it can be altered to enhance axonal growth potential. We find a developmental change in integrin trafficking; transport becomes predominantly retrograde throughout axons, but not dendrites, as neurons mature. The directionality of transport is controlled through the activation state of ARF6, with developmental upregulation of the ARF6 GEF ARNO enhancing retrograde transport. Lowering ARF6 activity in mature neurons restores anterograde integrin flow, allows transport into axons, and increases axon growth. In addition, we found that the axon initial segment is partly responsible for exclusion of integrins and removal of this structure allows integrins into axons. Changing posttranslational modifications of tubulin with taxol also allows integrins into the proximal axon. The experiments suggest that the developmental loss of regenerative ability in CNS axons is due to exclusion of growth-related molecules due to changes in trafficking. PMID:26019348

  6. The role of ARF1 and rab GTPases in polarization of the Golgi stack.

    PubMed

    Bannykh, Serguei I; Plutner, Helen; Matteson, Jeanne; Balch, William E

    2005-09-01

    The organization and sorting of proteins within the Golgi stack to establish and maintain its cis to trans polarization remains an enigma. The function of Golgi compartments involves coat assemblages that facilitate vesicle traffic, Rab-tether-SNAP receptor (SNARE) machineries that dictate membrane identity, as well as matrix components that maintain structure. We have investigated how the Golgi complex achieves compartmentalization in response to a key component of the coat complex I (COPI) coat assembly pathway, the ARF1 GTPase, in relationship to GTPases-regulating endoplasmic reticulum (ER) exit (Sar1) and targeting fusion (Rab1). Following collapse of the Golgi into the ER in response to inhibition of activation of ARF1 by Brefeldin A, we found that Sar1- and Rab1-dependent Golgi reformation took place at multiple peripheral and perinuclear ER exit sites. These rapidly converged into immature Golgi that appeared as onion-like structures composed of multiple concentrically arrayed cisternae of mixed enzyme composition. During clustering to the perinuclear region, Golgi enzymes were sorted to achieve the degree of polarization within the stack found in mature Golgi. Surprisingly, we found that sorting of Golgi enzymes into their subcompartments was insensitive to the dominant negative GTP-restricted ARF1 mutant, a potent inhibitor of COPI coat disassembly and vesicular traffic. We suggest that a COPI-independent, Rab-dependent mechanism is involved in the rapid reorganization of resident enzymes within the Golgi stack following synchronized release from the ER, suggesting an important role for Rab hubs in directing Golgi polarization. PMID:16101683

  7. Scatterometry for EUV lithography at the 22-nm node

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin; Vartanian, Victor; Ren, Liping; Huang, George; Montgomery, Cecilia; Montgomery, Warren; Elia, Alex; Liu, Xiaoping

    2011-03-01

    Moore's Law continues to drive improvements to lithographic resolution to increase integrated circuit transistor density, improve performance, and reduce cost. For the 22 nm node and beyond, extreme ultraviolet lithography (EUVL) is a promising technology with λ=13.5 nm, a larger k1 value and lower cost of ownership than other available technologies. For small feature sizes, process control will be increasingly challenging, as small features will create measurement uncertainties, yet with tighter specifications. Optical scatterometry is a primary candidate metrology for EUV lithography process control. Using simulation and experimental data, this work will explore scatterometry's application to a typical lithography process being used for EUV development, which should be representative of lithography processes that will be utilized for EUV High Volume manufacturing (HVM). EUV lithography will be performed using much thinner photoresist thicknesses than were used at the 248nm or 193nm lithography generations, and will probably include underlayers for adhesion improvement; these new processes conditions were investigated in this metrological study.

  8. Application of optical CD metrology for alternative lithography

    NASA Astrophysics Data System (ADS)

    Asano, Masafumi; Kawamoto, Akiko; Matsuki, Kazuto; Godny, Stephane; Lin, Tingsheng; Wakamoto, Koichi

    2013-04-01

    Directed self-assembly (DSA) and nanoimprint lithography (NIL) have been widely developed for low-cost nanoscale patterning. Although they are currently regarded as "alternative lithography," some papers show their potential to be candidates for next-generation lithography (NGL). To actualize the potential, the contribution of metrology engineers is necessary. Since the characteristics of the lithography techniques are different from those of conventional lithography, new metrology schemes correlated with each characteristic are required. In DSA of block copolymer (BCP), a guide is needed to control the direction and position of BCP. Therefore, it is necessary to monitor the relationship between the guide and the BCP pattern. Since the depth of guide or the coating thickness variation of BCP over guide influences the behavior of phase separation of BCP, 3D metrology becomes increasingly important. In NIL, residual resist thickness (RLT) underneath the pattern should be measured because its variation affects the CD variation of transferred pattern. 3D metrology is also important in NIL. Optical critical dimension (OCD) metrology will be a powerful tool for 3D metrology. In this work, some applications of OCD for alternative lithography have been studied. For DSA, we have tried to simultaneously monitor the guide and BCP pattern in a DSA-based contact hole shrinking process. Sufficient measurement accuracy for CD and shapes for guide and BCP patterns was achievable. For NIL, sufficient sensitivity to RLT measurement was obtained.

  9. Structure of the catalytic domain of Plasmodium falciparum ARF GTPase-activating protein (ARFGAP)

    SciTech Connect

    Cook, William J.; Senkovich, Olga; Chattopadhyay, Debasish

    2012-03-26

    The crystal structure of the catalytic domain of the ADP ribosylation factor GTPase-activating protein (ARFGAP) from Plasmodium falciparum has been determined and refined to 2.4 {angstrom} resolution. Multiwavelength anomalous diffraction (MAD) data were collected utilizing the Zn{sup 2+} ion bound at the zinc-finger domain and were used to solve the structure. The overall structure of the domain is similar to those of mammalian ARFGAPs. However, several amino-acid residues in the area where GAP interacts with ARF1 differ in P. falciparum ARFGAP. Moreover, a number of residues that form the dimer interface in the crystal structure are unique in P. falciparum ARFGAP.

  10. Collateral damage-free debridement using 193nm ArF laser

    NASA Astrophysics Data System (ADS)

    Wynne, James J.; Felsenstein, Jerome M.; Trzcinski, Robert; Zupanski-Nielsen, Donna; Connors, Daniel P.

    2011-03-01

    Burn eschar and other necrotic areas of the skin and soft tissue are anhydrous compared to the underlying viable tissue. A 193 nm ArF excimer laser, emitting electromagnetic radiation at 6.4 eV at fluence exceeding the ablation threshold, will debride such necrotic areas. Because such radiation is strongly absorbed by aqueous chloride ions through the nonthermal process of electron photodetachment, debridement will cease when hydrated (with chloride ions) viable tissue is exposed, avoiding collateral damage to this tissue. Such tissue will be sterile and ready for further treatment, such as a wound dressing and/or a skin graft.

  11. Conformal Visualization for Partially-Immersive Platforms

    PubMed Central

    Petkov, Kaloian; Papadopoulos, Charilaos; Zhang, Min; Kaufman, Arie E.; Gu, Xianfeng

    2010-01-01

    Current immersive VR systems such as the CAVE provide an effective platform for the immersive exploration of large 3D data. A major limitation is that in most cases at least one display surface is missing due to space, access or cost constraints. This partially-immersive visualization results in a substantial loss of visual information that may be acceptable for some applications, however it becomes a major obstacle for critical tasks, such as the analysis of medical data. We propose a conformal deformation rendering pipeline for the visualization of datasets on partially-immersive platforms. The angle-preserving conformal mapping approach is used to map the 360°3D view volume to arbitrary display configurations. It has the desirable property of preserving shapes under distortion, which is important for identifying features, especially in medical data. The conformal mapping is used for rasterization, realtime raytracing and volume rendering of the datasets. Since the technique is applied during the rendering, we can construct stereoscopic images from the data, which is usually not true for image-based distortion approaches. We demonstrate the stereo conformal mapping rendering pipeline in the partially-immersive 5-wall Immersive Cabin (IC) for virtual colonoscopy and architectural review. PMID:26279083

  12. Human adaptation to repeated cold immersions.

    PubMed Central

    Golden, F S; Tipton, M J

    1988-01-01

    1. The present investigation was designed to examine human adaptation to intermittent severe cold exposure and to assess the effect of exercise on any adaptation obtained. 2. Sixteen subjects were divided into two equal groups. Each subject performed ten head-out immersions; two into thermoneutral water which was then cooled until they shivered vigorously, and eight into water at 15 degrees C for 40 min. During the majority of the 15 degrees C immersions, one group (dynamic group) exercised whilst the other (static group) rested. 3. Results showed that both groups responded to repeated cold immersions with a reduction in their initial responses to cold. The time course of these reductions varied, however, between responses. 4. Only the static group developed a reduced metabolic response to prolonged resting immersion. 5. It is concluded that repeated resting exposure to cold was the more effective way of producing an adaptation. The performance of exercise during repeated exposure to cold prevented the development of an adaptive reduction in the metabolic response to cold during a subsequent resting immersion. In addition, many of the adaptations obtained during repeated resting exposure were overridden or masked during a subsequent exercising immersion. PMID:3411500

  13. Successful demonstration of a comprehensive lithography defect monitoring strategy

    NASA Astrophysics Data System (ADS)

    Peterson, Ingrid B.; Breaux, Louis H.; Cross, Andrew; von den Hoff, Michael

    2003-07-01

    This paper describes the validation of the methodology, the model and the impact of an optimized Lithography Defect Monitoring Strategy at two different semiconductor manufacturing factories. The lithography defect inspection optimization was implemented for the Gate Module at both factories running 0.13-0.15μm technologies on 200mm wafers, one running microprocessor and the other memory devices. As minimum dimensions and process windows decrease in the lithography area, new technologies and technological advances with resists and resist systems are being implemented to meet the demands. Along with these new technological advances in the lithography area comes potentially unforeseen defect issues. The latest lithography processes involve new resists in extremely thin, uniform films, exposing the films under conditions of highly optimized focus and illumination, and finally removing the resist completely and cleanly. The lithography cell is defined as the cluster of process equipment that accomplishes the coating process (surface prep, resist spin, edge-bead removal and soft bake), the alignment and exposure, and the developing process (post-exposure bake, develop, rinse) of the resist. Often the resist spinning process involves multiple materials such as BARC (bottom ARC) and / or TARC (top ARC) materials in addition to the resist itself. The introduction of these new materials with the multiple materials interfaces and the tightness of the process windows leads to an increased variety of defect mechanisms in the lithography area. Defect management in the lithography area has become critical to successful product introduction and yield ramp. The semiconductor process itself contributes the largest number and variety of defects, and a significant portion of the total defects originate within the lithography cell. From a defect management perspective, the lithography cell has some unique characteristics. First, defects in the lithography process module have the

  14. Regulation of the p14ARF-Mdm2-p53 pathway: an overview in breast cancer.

    PubMed

    Agrawal, Anshu; Yang, Jianhui; Murphy, Richard F; Agrawal, Devendra K

    2006-10-01

    Knowledge of the roles of proteins that are abnormally suppressed or activated due to mutation in the DNA sequences of the common tumor suppressor genes, p14ARF and p53, is critical to the understanding the pathogenesis of breast cancer. Mdm2 is a mediator for the function of both p14ARF and p53. In this review article factors including Pokemon, Geminin, Twist, and Apigenin, which control the action of individual proteins in the p14ARF-Mdm2-p53 pathway in breast cancer as well the consequences of mutation 7 of p53 are discussed. The complexity of interaction of components of the pathway and the underlying development of cancer is emphasized. Opportunities for future therapeutic innovations are indicated. PMID:16919268

  15. Snf1/AMP-activated protein kinase activates Arf3p to promote invasive yeast growth via a non-canonical GEF domain

    PubMed Central

    Hsu, Jia-Wei; Chen, Kuan-Jung; Lee, Fang-Jen S.

    2015-01-01

    Active GTP-bound Arf GTPases promote eukaryotic cell membrane trafficking and cytoskeletal remodelling. Arf activation is accelerated by guanine nucleotide-exchange factors (GEFs) using the critical catalytic glutamate in all known Sec7 domain sequences. Yeast Arf3p, a homologue of mammalian Arf6, is required for yeast invasive responses to glucose depletion. Here we identify Snf1p as a GEF that activates Arf3p when energy is limited. SNF1 is the yeast homologue of AMP-activated protein kinase (AMPK), which is a key regulator of cellular energy homeostasis. As activation of Arf3p does not depend on the Snf1p kinase domain, assay of regulatory domain fragments yield evidence that the C-terminal hydrophobic α-helix core of Snf1p is a non-canonical GEF for Arf3p activation. Thus, our study reveals a novel mechanism for regulating cellular responses to energy deprivation, in particular invasive cell growth, through direct Arf activation by Snf1/AMPK. PMID:26198097

  16. Failure of the Tomato Trans-Acting Short Interfering RNA Program to Regulate AUXIN RESPONSE FACTOR3 and ARF4 Underlies the Wiry Leaf Syndrome[C][W

    PubMed Central

    Yifhar, Tamar; Pekker, Irena; Peled, Dror; Friedlander, Gilgi; Pistunov, Anna; Sabban, Moti; Wachsman, Guy; Alvarez, John Paul; Amsellem, Ziva; Eshed, Yuval

    2012-01-01

    Interfering with small RNA production is a common strategy of plant viruses. A unique class of small RNAs that require microRNA and short interfering (siRNA) biogenesis for their production is termed trans-acting short interfering RNAs (ta-siRNAs). Tomato (Solanum lycopersicum) wiry mutants represent a class of phenotype that mimics viral infection symptoms, including shoestring leaves that lack leaf blade expansion. Here, we show that four WIRY genes are involved in siRNA biogenesis, and in their corresponding mutants, levels of ta-siRNAs that regulate AUXIN RESPONSE FACTOR3 (ARF3) and ARF4 are reduced, while levels of their target ARFs are elevated. Reducing activity of both ARF3 and ARF4 can rescue the wiry leaf lamina, and increased activity of either can phenocopy wiry leaves. Thus, a failure to negatively regulate these ARFs underlies tomato shoestring leaves. Overexpression of these ARFs in Arabidopsis thaliana, tobacco (Nicotiana tabacum), and potato (Solanum tuberosum) failed to produce wiry leaves, suggesting that the dramatic response in tomato is exceptional. As negative regulation of orthologs of these ARFs by ta-siRNA is common to land plants, we propose that ta-siRNA levels serve as universal sensors for interference with small RNA biogenesis, and changes in their levels direct species-specific responses. PMID:23001036

  17. The GTPase ARF6 Controls ROS Production to Mediate Angiotensin II-Induced Vascular Smooth Muscle Cell Proliferation

    PubMed Central

    Bourmoum, Mohamed; Charles, Ricardo; Claing, Audrey

    2016-01-01

    High reactive oxygen species (ROS) levels and enhanced vascular smooth muscle cells (VSMC) proliferation are observed in numerous cardiovascular diseases. The mechanisms by which hormones such as angiotensin II (Ang II) acts to promote these cellular responses remain poorly understood. We have previously shown that the ADP-ribosylation factor 6 (ARF6), a molecular switch that coordinates intracellular signaling events can be activated by the Ang II receptor (AT1R). Whether this small GTP-binding protein controls the signaling events leading to ROS production and therefore Ang II-dependent VSMC proliferation, remains however unknown. Here, we demonstrate that in rat aortic VSMC, Ang II stimulation led to the subsequent activation of ARF6 and Rac1, a key regulator of NADPH oxidase activity. Using RNA interference, we showed that ARF6 is essential for ROS generation since in conditions where this GTPase was knocked down, Ang II could no longer promote superoxide anion production. In addition to regulating Rac1 activity, ARF6 also controlled expression of the NADPH oxidase 1 (Nox 1) as well as the ability of the EGFR to become transactivated. Finally, ARF6 also controlled MAPK (Erk1/2, p38 and Jnk) activation, a key pathway of VSMC proliferation. Altogether, our findings demonstrate that Ang II promotes activation of ARF6 to controls ROS production by regulating Rac1 activation and Nox1 expression. In turn, increased ROS acts to activate the MAPK pathway. These signaling events represent a new molecular mechanism by which Ang II can promote proliferation of VSMC. PMID:26824355

  18. Regulation of a senescence checkpoint response by the E2F1 transcription factor and p14ARF tumor suppressor

    SciTech Connect

    Dimri, Goberdhan P.; Itahana, Koji; Acosta, Meileen; Campisi, Judith

    1999-11-05

    Normal cells do not divide indefinitely due to a process known as replicative senescence. Human cells arrest growth with a senescent phenotype when they acquire one or more critically short telomere as a consequence of cell division. Recent evidence suggests that certain types of DNA damage, chromatin remodeling, or oncogenic forms of Rasor Raf can also elicit a senescence response. We show here that E2F1, a multifunctional transcription factor that binds the retinoblastoma (pRb) tumor suppressor and can either promote or suppress tumorigenesis, induces a senescent phenotype when overexpressed in normal human fibroblasts. Normal human cells stably arrested proliferation and expressed several markers of replicative senescence in response to E2F1. This activity of E2F1 was independent of its pRb binding activity, but dependent on its ability to stimulate gene expression. The E2F1 target gene critical for the senescence response appeared to be the p14ARF tumor suppressor. Replicatively senescent human fibroblasts overexpressed p14ARF, and ectopic expression of p14ARF in presenescent cells induced a phenotype similar to that induced by E2F1. Consistent with a critical role for p14ARF, cells with compromised p53 function were immune to senescence induction by E2F1, as were cells deficient in p14ARF. Our findings support the idea that the senescence response is a critical tumor suppressive mechanism, provide an explanation for the apparently paradoxical roles of E2F1 in oncogenesis, and identify p14ARF as a potentially important mediator of the senescent phenotype.

  19. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  20. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  1. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  2. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  3. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  4. p16INK4a and p14ARF methylation as a potential biomarker for human bladder cancer.

    PubMed

    Kawamoto, Ken; Enokida, Hideki; Gotanda, Takenari; Kubo, Hiroyuki; Nishiyama, Kenryu; Kawahara, Motoshi; Nakagawa, Masayuki

    2006-01-20

    Promoter hypermethylation is one of the putative mechanisms underlying the inactivation of negative cell-cycle regulators. We examined whether the methylation status of p16(INK4a) and p14(ARF), genes located upstream of the RB and p53 pathway, is a useful biomarker for the staging, clinical outcome, and prognosis of human bladder cancer. Using methylation-specific PCR (MSP), we examined the methylation status of p16(INK4a) and p14(ARF) in 64 samples from 45 bladder cancer patients (34 males, 11 females). In 19 patients with recurrent bladder cancer, we examined paired tissue samples from their primary and recurrent tumors. The methylation status of representative samples was confirmed by bisulfite DNA sequencing analysis. The median follow-up duration was 34.3 months (range 27.0-100.1 months). The methylation rate for p16(INK4a) and p14(ARF) was 17.8% and 31.1%, respectively, in the 45 patients. The incidence of p16(INKa) and p14(ARF) methylation was significantly higher in patients with invasive (>or=pT2) than superficial bladder cancer (pT1) (p=0.006 and p=0.001, respectively). No MSP bands for p16(INK4a) and p14(ARF) were detected in the 8 patients with superficial, non-recurrent tumors. In 19 patients with tumor recurrence, the p16(INK4a) and p14(ARF) methylation status of the primary and recurrent tumors was similar. Of the 22 patients who had undergone cystectomy, 8 (36.4%) manifested p16(INKa) methylation; p16(INK4a) was not methylated in 23 patients without cystectomy (p=0.002). Kaplan-Meier analysis revealed that patients with p14(ARF) methylation had a significantly poorer prognosis than those without (p=0.029). This is the first study indicating that MSP analysis of p16(INK4a) and p14(ARF) genes is a useful biomarker for the pathological stage, clinical outcome, and prognosis of patients with bladder cancer. PMID:16316628

  5. Characterization of 'metal resist' for EUV lithography

    NASA Astrophysics Data System (ADS)

    Toriumi, Minoru; Sato, Yuta; Kumai, Reiji; Yamashita, Yoshiyuki; Tsukiyama, Koichi; Itani, Toshiro

    2016-03-01

    We characterized EIDEC metal resist for EUV lithography by various measurement methods. The low-voltage aberration-corrected scanning transmission electron microscopy combined with electron energy-loss spectroscopy showed the morphology of metal resists in nanometer regions and enabled studying the distribution of resist component in the resist film. The zirconium oxide metal resist kept the core-shell structure in the resist films and the titanium oxide metal resist showed the aggregation in the film. X-ray diffractometry and ab initio molecular dynamics simulation showed the amorphous structure with short-range order of the zirconium oxide metal resist. X-ray Photoelectron spectroscopy of the zirconium oxide-methacrylic acid metal resist showed the decomposition of the shell molecules and the increase of electron density at zirconium atoms after the EUV exposure. Infrared (IR) spectra indicated that the shell molecules made the various bindings to the metal core and the specific vibrational mode of shell molecules showed the divergent responsivity to the irradiation wavenumber of the IR Free electron laser.

  6. Metal hierarchical patterning by direct nanoimprint lithography

    PubMed Central

    Radha, Boya; Lim, Su Hui; Saifullah, Mohammad S. M.; Kulkarni, Giridhar U.

    2013-01-01

    Three-dimensional hierarchical patterning of metals is of paramount importance in diverse fields involving photonics, controlling surface wettability and wearable electronics. Conventionally, this type of structuring is tedious and usually involves layer-by-layer lithographic patterning. Here, we describe a simple process of direct nanoimprint lithography using palladium benzylthiolate, a versatile metal-organic ink, which not only leads to the formation of hierarchical patterns but also is amenable to layer-by-layer stacking of the metal over large areas. The key to achieving such multi-faceted patterning is hysteretic melting of ink, enabling its shaping. It undergoes transformation to metallic palladium under gentle thermal conditions without affecting the integrity of the hierarchical patterns on micro- as well as nanoscale. A metallic rice leaf structure showing anisotropic wetting behavior and woodpile-like structures were thus fabricated. Furthermore, this method is extendable for transferring imprinted structures to a flexible substrate to make them robust enough to sustain numerous bending cycles. PMID:23446801

  7. X-ray lithography using holographic images

    DOEpatents

    Howells, Malcolm R.; Jacobsen, Chris

    1995-01-01

    A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

  8. Smartphone sensors for stone lithography authentication.

    PubMed

    Spagnolo, Giuseppe Schirripa; Cozzella, Lorenzo; Papalillo, Donato

    2014-01-01

    Nowadays mobile phones include quality photo and video cameras, access to wireless networks and the internet, GPS assistance and other innovative systems. These facilities open them to innovative uses, other than the classical telephonic communication one. Smartphones are a more sophisticated version of classic mobile phones, which have advanced computing power, memory and connectivity. Because fake lithographs are flooding the art market, in this work, we propose a smartphone as simple, robust and efficient sensor for lithograph authentication. When we buy an artwork object, the seller issues a certificate of authenticity, which contains specific details about the artwork itself. Unscrupulous sellers can duplicate the classic certificates of authenticity, and then use them to "authenticate" non-genuine works of art. In this way, the buyer will have a copy of an original certificate to attest that the "not original artwork" is an original one. A solution for this problem would be to insert a system that links together the certificate and the related specific artwork. To do this it is necessary, for a single artwork, to find unique, unrepeatable, and unchangeable characteristics. In this article we propose an innovative method for the authentication of stone lithographs. We use the color spots distribution captured by means of a smartphone camera as a non-cloneable texture of the specific artworks and an information management system for verifying it in mobility stone lithography. PMID:24811077

  9. Smartphone Sensors for Stone Lithography Authentication

    PubMed Central

    Schirripa Spagnolo, Giuseppe; Cozzella, Lorenzo; Papalillo, Donato

    2014-01-01

    Nowadays mobile phones include quality photo and video cameras, access to wireless networks and the internet, GPS assistance and other innovative systems. These facilities open them to innovative uses, other than the classical telephonic communication one. Smartphones are a more sophisticated version of classic mobile phones, which have advanced computing power, memory and connectivity. Because fake lithographs are flooding the art market, in this work, we propose a smartphone as simple, robust and efficient sensor for lithograph authentication. When we buy an artwork object, the seller issues a certificate of authenticity, which contains specific details about the artwork itself. Unscrupulous sellers can duplicate the classic certificates of authenticity, and then use them to “authenticate” non-genuine works of art. In this way, the buyer will have a copy of an original certificate to attest that the “not original artwork” is an original one. A solution for this problem would be to insert a system that links together the certificate and the related specific artwork. To do this it is necessary, for a single artwork, to find unique, unrepeatable, and unchangeable characteristics. In this article we propose an innovative method for the authentication of stone lithographs. We use the color spots distribution captured by means of a smartphone camera as a non-cloneable texture of the specific artworks and an information management system for verifying it in mobility stone lithography. PMID:24811077

  10. Reflective masks for extreme ultraviolet lithography

    SciTech Connect

    Nguyen, Khanh Bao

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 {mu}m wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  11. Materials for future lithography (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Chang, Seung Wook; Yang, Da; Dai, Junyan; Felix, Nelson; Bratton, Daniel; Tsuchiya, Kousuke; Kwark, Young-Je; Bravo-Vasquez, Juan-Pablo; Ober, Christopher K.; Cao, Heidi B.; Deng, Hai

    2005-05-01

    The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl

  12. Resist profile simulation with fast lithography model

    NASA Astrophysics Data System (ADS)

    He, Yan-Ying; Chou, Chih-Shiang; Tang, Yu-Po; Huang, Wen-Chun; Liu, Ru-Gun; Gau, Tsai-Sheng

    2014-03-01

    A traditional approach to construct a fast lithographic model is to match wafer top-down SEM images, contours and/or gauge CDs with a TCC model plus some simple resist representation. This modeling method has been proven and is extensively used for OPC modeling. As the technology moves forward, this traditional approach has become insufficient in regard to lithography weak point detection, etching bias prediction, etc. The drawback of this approach is from metrology and simulation. First, top-down SEM is only good for acquiring planar CD information. Some 3D metrology such as cross-section SEM or AFM is necessary to obtain the true resist profile. Second, the TCC modeling approach is only suitable for planar image simulation. In order to model the resist profile, full 3D image simulation is needed. Even though there are many rigorous simulators capable of catching the resist profile very well, none of them is feasible for full-chip application due to the tremendous consumption of computational resource. The authors have proposed a quasi-3D image simulation method in the previous study [1], which is suitable for full-chip simulation with the consideration of sidewall angles, to improve the model accuracy of planar models. In this paper, the quasi-3D image simulation is extended to directly model the resist profile with AFM and/or cross-section SEM data. Resist weak points detected by the model generated with this 3D approach are verified on the wafer.

  13. A Presenilin-2-ARF4 trafficking axis modulates Notch signaling during epidermal differentiation.

    PubMed

    Ezratty, Ellen J; Pasolli, H Amalia; Fuchs, Elaine

    2016-07-01

    How primary cilia impact epidermal growth and differentiation during embryogenesis is poorly understood. Here, we show that during skin development, Notch signaling occurs within the ciliated, differentiating cells of the first few suprabasal epidermal layers. Moreover, both Notch signaling and cilia disappear in the upper layers, where key ciliary proteins distribute to cell-cell borders. Extending this correlation, we find that Presenilin-2 localizes to basal bodies/cilia through a conserved VxPx motif. When this motif is mutated, a GFP-tagged Presenilin-2 still localizes to intercellular borders, but basal body localization is lost. Notably, in contrast to wild type, this mutant fails to rescue epidermal differentiation defects seen upon Psen1 and 2 knockdown. Screening components implicated in ciliary targeting and polarized exocytosis, we provide evidence that the small GTPase ARF4 is required for Presenilin basal body localization, Notch signaling, and subsequent epidermal differentiation. Collectively, our findings raise the possibility that ARF4-dependent polarized exocytosis acts through the basal body-ciliary complex to spatially regulate Notch signaling during epidermal differentiation. PMID:27354375

  14. Ablation and cone formation mechanism on CR-39 by ArF laser irradiation

    SciTech Connect

    Shakeri Jooybari, B. E-mail: hafarideh@aut.ac.ir; Afarideh, H. E-mail: hafarideh@aut.ac.ir; Lamehi-Rachti, M.; Ghergherehchi, M.

    2015-03-07

    In this work, chemical properties, surface modification, and micro structures formation on ablated polyallyl di-glycol carbonate (CR-39) polymer by ArF laser irradiation (λ = 193 nm) at various fluences and pulse number were investigated. CR-39 samples have been irradiated with an ArF laser (193 nm) at a repetition rate of 1 Hz. Threshold fluence of ablation and effective absorption coefficient of CR-39 were determined. Conical microstructures (Taylor cone) formed on laser-ablated CR-39 exhibit: smooth, Taylor cone shape walls and sharp tips together with interference and well defined fringe-structure with a period of 230 nm, around cone base. Mechanism of cone formation and cone evolution of CR-39 ablated surface were investigated by change of fluences (at a given pulse number) and pulse number (at a given fluence). Cone height, cone base, and region of interface were increased in micrometer steps by increasing the total fluence. Depression on the base of the cone and the circular fringe were simulated. FTIR spectra were measured and energy dispersive x-ray analysis of irradiated and un-irradiated samples was performed.

  15. A-RAF Kinase Functions in ARF6 Regulated Endocytic Membrane Traffic

    PubMed Central

    Nekhoroshkova, Elena; Albert, Stefan; Becker, Matthias; Rapp, Ulf R.

    2009-01-01

    Background RAF kinases direct ERK MAPK signaling to distinct subcellular compartments in response to growth factor stimulation. Methodology/Principal Findings Of the three mammalian isoforms A-RAF is special in that one of its two lipid binding domains mediates a unique pattern of membrane localization. Specific membrane binding is retained by an N-terminal fragment (AR149) that corresponds to a naturally occurring splice variant termed DA-RAF2. AR149 colocalizes with ARF6 on tubular endosomes and has a dominant negative effect on endocytic trafficking. Moreover actin polymerization of yeast and mammalian cells is abolished. AR149/DA-RAF2 does not affect the internalization step of endocytosis, but trafficking to the recycling compartment. Conclusions/Significance A-RAF induced ERK activation is required for this step by activating ARF6, as A-RAF depletion or inhibition of the A-RAF controlled MEK-ERK cascade blocks recycling. These data led to a new model for A-RAF function in endocytic trafficking. PMID:19247477

  16. Arf-like Protein 3 (ARL3) Regulates Protein Trafficking and Ciliogenesis in Mouse Photoreceptors.

    PubMed

    Hanke-Gogokhia, Christin; Wu, Zhijian; Gerstner, Cecilia D; Frederick, Jeanne M; Zhang, Houbin; Baehr, Wolfgang

    2016-03-25

    Arf-like protein 3 (ARL3) is a ubiquitous small GTPase expressed in ciliated cells of plants and animals. Germline deletion ofArl3in mice causes multiorgan ciliopathy reminiscent of Bardet-Biedl or Joubert syndromes. As photoreceptors are elegantly compartmentalized and have cilia, we probed the function of ARL3 (ADP-ribosylation factor (Arf)-like 3 protein) by generating rod photoreceptor-specific (prefix(rod)) and retina-specific (prefix(ret))Arl3deletions. In predegenerate(rod)Arl3(-/-)mice, lipidated phototransduction proteins showed trafficking deficiencies, consistent with the role of ARL3 as a cargo displacement factor for lipid-binding proteins. By contrast,(ret)Arl3(-/-)rods and cones expressing Cre recombinase during embryonic development formed neither connecting cilia nor outer segments and degenerated rapidly. Absence of cilia infers participation of ARL3 in ciliogenesis and axoneme formation. Ciliogenesis was rescued, and degeneration was reversed in part by subretinal injection of adeno-associated virus particles expressing ARL3-EGFP. The conditional knock-out phenotypes permitted identification of two ARL3 functions, both in the GTP-bound form as follows: one as a regulator of intraflagellar transport participating in photoreceptor ciliogenesis and the other as a cargo displacement factor transporting lipidated protein to the outer segment. Surprisingly, a farnesylated inositol polyphosphate phosphatase only trafficked from the endoplasmic reticulum to the Golgi, thereby excluding it from a role in photoreceptor cilia physiology. PMID:26814127

  17. Ablation and cone formation mechanism on CR-39 by ArF laser irradiation

    NASA Astrophysics Data System (ADS)

    Shakeri Jooybari, B.; Afarideh, H.; Lamehi-Rachti, M.; Ghergherehchi, M.

    2015-03-01

    In this work, chemical properties, surface modification, and micro structures formation on ablated polyallyl di-glycol carbonate (CR-39) polymer by ArF laser irradiation (λ = 193 nm) at various fluences and pulse number were investigated. CR-39 samples have been irradiated with an ArF laser (193 nm) at a repetition rate of 1 Hz. Threshold fluence of ablation and effective absorption coefficient of CR-39 were determined. Conical microstructures (Taylor cone) formed on laser-ablated CR-39 exhibit: smooth, Taylor cone shape walls and sharp tips together with interference and well defined fringe-structure with a period of 230 nm, around cone base. Mechanism of cone formation and cone evolution of CR-39 ablated surface were investigated by change of fluences (at a given pulse number) and pulse number (at a given fluence). Cone height, cone base, and region of interface were increased in micrometer steps by increasing the total fluence. Depression on the base of the cone and the circular fringe were simulated. FTIR spectra were measured and energy dispersive x-ray analysis of irradiated and un-irradiated samples was performed.

  18. Latest performance of ArF immersion scanner NSR-S630D for high-volume manufacturing for 7nm node

    NASA Astrophysics Data System (ADS)

    Funatsu, Takayuki; Uehara, Yusaku; Hikida, Yujiro; Hayakawa, Akira; Ishiyama, Satoshi; Hirayama, Toru; Kono, Hirotaka; Shirata, Yosuke; Shibazaki, Yuichi

    2015-03-01

    In order to achieve stable operation in cutting-edge semiconductor manufacturing, Nikon has developed NSR-S630D with extremely accurate overlay while maintaining throughput in various conditions resembling a real production environment. In addition, NSR-S630D has been equipped with enhanced capabilities to maintain long-term overlay stability and user interface improvement all due to our newly developed application software platform. In this paper, we describe the most recent S630D performance in various conditions similar to real productions. In a production environment, superior overlay accuracy with high dose conditions and high throughput are often required; therefore, we have performed several experiments with high dose conditions to demonstrate NSR's thermal aberration capabilities in order to achieve world class overlay performance. Furthermore, we will introduce our new software that enables long term overlay performance.

  19. Two new design methods for lithography mask: phase-shifting scattering bar and interlaced phase-shifting mask

    NASA Astrophysics Data System (ADS)

    Yeh, Kwei-Tin; Huang, Chao-Yi

    2014-07-01

    For 193 nm immersion lithography, it is hard to print clear 4X nm dense images (ex. contact holes) on wafer without any modifications due to lower light intensity. In the past, the most common method is to add the scattering bars, which can enhance the light intensity of contact holes. However, with tinier pattern, the distance between scattering bars and contact holes will get quite close. Hence, the error tolerance for mask making was reduced. On the other hand, this method may also cause the pattern twist which will induce pattern crosslink. To solve this issue, a new design method for lithography mask was proposed, which is named "Phase-shifting Scattering Bar", and it shows better performance in 1D chain array patterns than those with traditional scattering bars. However, for even tinier patterns, it is quite difficult to put these scattering bars on mask. Hence, another special design named "Interlaced Phase-shifting Mask" was proposed to handle such tiny dense patterns. In this design, main patterns are also the scattering bars for adjacent patterns. Hence, there is no need for additional tiny scattering bars, and the mask making requirement can be also relaxed. Both of these two mask design are useful tools to trim and modify light intensity profile on wafer. The image contrast was largely enhanced which means a better resolution and a larger process window can be gained without the cost of new illumination equipments.

  20. Deregulation of the OsmiR160 Target Gene OsARF18 Causes Growth and Developmental Defects with an Alteration of Auxin Signaling in Rice.

    PubMed

    Huang, Jian; Li, Zhiyong; Zhao, Dazhong

    2016-01-01

    MicroRNAs (miRNAs) control gene expression as key negative regulators at the post-transcriptional level. MiR160 plays a pivotal role in Arabidopsis growth and development through repressing expression of its target AUXIN RESPONSE FACTOR (ARF) genes; however, the function of miR160 in monocots remains elusive. In this study, we found that the mature rice miR160 (OsmiR160) was mainly derived from OsMIR160a and OsMIR160b genes. Among four potential OsmiR160 target OsARF genes, the OsARF18 transcript was cleaved at the OsmiR160 target site. Rice transgenic plants (named mOsARF18) expressing an OsmiR160-resistant version of OsARF18 exhibited pleiotropic defects in growth and development, including dwarf stature, rolled leaves, and small seeds. mOsARF18 leaves were abnormal in bulliform cell differentiation and epidermal cell division. Starch accumulation in mOsARF18 seeds was also reduced. Moreover, auxin induced expression of OsMIR160a, OsMIR160b, and OsARF18, whereas expression of OsMIR160a and OsMIR160b as well as genes involved in auxin signaling was altered in mOsARF18 plants. Our results show that negative regulation of OsARF18 expression by OsmiR160 is critical for rice growth and development via affecting auxin signaling, which will advance future studies on the molecular mechanism by which miR160 fine-tunes auxin signaling in plants. PMID:27444058