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Sample records for atomic layer graphene

  1. Plasma enhanced atomic layer deposition of ultrathin oxides on graphene

    NASA Astrophysics Data System (ADS)

    Trimble, Christie J.; Zaniewski, Anna M.; Kaur, Manpuneet; Nemanich, Robert J.

    2015-03-01

    Graphene, a single atomic layer of sp2 bonded carbon atoms, possesses extreme material properties that point toward a plethora of potential electronic applications. Many of these possibilities require the combination of graphene with dielectric materials such as metal oxides. Simultaneously, there is interest in new physical properties that emerge when traditionally three dimensional materials are constrained to ultrathin layers. For both of these objectives, we explore deposition of ultrathin oxide layers on graphene. In this project, we perform plasma enhanced atomic layer deposition (PEALD) of aluminum oxide on graphene that has been grown by chemical vapor deposition atop copper foil and achieve oxide layers that are <1.5 nm. Because exposure to oxygen plasma can cause the graphene to deteriorate, we explore techniques to mitigate this effect and optimize the PEALD process. Following deposition, the graphene and oxide films are transferred to arbitrary substrates for further analysis. We use x-ray photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy to assess the quality of the resulting films. This work is supported by the National Science Foundation under Grant # DMR-1206935.

  2. Damage evaluation in graphene underlying atomic layer deposition dielectrics.

    PubMed

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A

    2015-01-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. PMID:26311131

  3. Damage evaluation in graphene underlying atomic layer deposition dielectrics

    PubMed Central

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

    2015-01-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. PMID:26311131

  4. Interfacial Atomic Structure of Twisted Few-Layer Graphene

    PubMed Central

    Ishikawa, Ryo; Lugg, Nathan R.; Inoue, Kazutoshi; Sawada, Hidetaka; Taniguchi, Takashi; Shibata, Naoya; Ikuhara, Yuichi

    2016-01-01

    A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterized by a single twist angle and lattice constant. This method is shown to be a powerful tool for accurately determining the atomic structure of two-dimensional materials such as graphene, even in the presence of experimental errors. Using coincidence-site-lattice and displacement-shift-complete theories, we show that the in-plane translation state between layers is not a significant structure parameter, explaining why the present method is adequate not only for bilayer graphene but also a few-layered twisted graphene. PMID:26888259

  5. Interfacial Atomic Structure of Twisted Few-Layer Graphene.

    PubMed

    Ishikawa, Ryo; Lugg, Nathan R; Inoue, Kazutoshi; Sawada, Hidetaka; Taniguchi, Takashi; Shibata, Naoya; Ikuhara, Yuichi

    2016-01-01

    A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterized by a single twist angle and lattice constant. This method is shown to be a powerful tool for accurately determining the atomic structure of two-dimensional materials such as graphene, even in the presence of experimental errors. Using coincidence-site-lattice and displacement-shift-complete theories, we show that the in-plane translation state between layers is not a significant structure parameter, explaining why the present method is adequate not only for bilayer graphene but also a few-layered twisted graphene. PMID:26888259

  6. Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

    NASA Astrophysics Data System (ADS)

    Nourbakhsh, Amirhasan; Adelmann, Christoph; Song, Yi; Lee, Chang Seung; Asselberghs, Inge; Huyghebaert, Cedric; Brizzi, Simone; Tallarida, Massimo; Schmeißer, Dieter; van Elshocht, Sven; Heyns, Marc; Kong, Jing; Palacios, Tomás; de Gendt, Stefan

    2015-06-01

    Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the

  7. Single-atom Catalysis Using Pt/Graphene Achieved through Atomic Layer Deposition

    PubMed Central

    Sun, Shuhui; Zhang, Gaixia; Gauquelin, Nicolas; Chen, Ning; Zhou, Jigang; Yang, Songlan; Chen, Weifeng; Meng, Xiangbo; Geng, Dongsheng; Banis, Mohammad N.; Li, Ruying; Ye, Siyu; Knights, Shanna; Botton, Gianluigi A.; Sham, Tsun-Kong; Sun, Xueliang

    2013-01-01

    Platinum-nanoparticle-based catalysts are widely used in many important chemical processes and automobile industries. Downsizing catalyst nanoparticles to single atoms is highly desirable to maximize their use efficiency, however, very challenging. Here we report a practical synthesis for isolated single Pt atoms anchored to graphene nanosheet using the atomic layer deposition (ALD) technique. ALD offers the capability of precise control of catalyst size span from single atom, subnanometer cluster to nanoparticle. The single-atom catalysts exhibit significantly improved catalytic activity (up to 10 times) over that of the state-of-the-art commercial Pt/C catalyst. X-ray absorption fine structure (XAFS) analyses reveal that the low-coordination and partially unoccupied densities of states of 5d orbital of Pt atoms are responsible for the excellent performance. This work is anticipated to form the basis for the exploration of a next generation of highly efficient single-atom catalysts for various applications.

  8. Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

    NASA Astrophysics Data System (ADS)

    Gong, Yongji; Shi, Gang; Zhang, Zhuhua; Zhou, Wu; Jung, Jeil; Gao, Weilu; Ma, Lulu; Yang, Yang; Yang, Shubin; You, Ge; Vajtai, Robert; Xu, Qianfan; MacDonald, Allan H.; Yakobson, Boris I.; Lou, Jun; Liu, Zheng; Ajayan, Pulickel M.

    2014-01-01

    Graphene and hexagonal boron nitride are typical conductor and insulator, respectively, while their hybrids hexagonal boron carbonitride are promising as a semiconductor. Here we demonstrate a direct chemical conversion reaction, which systematically converts the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform boron nitride and boron carbonitride structures without disrupting the structural integrity of the original graphene templates. We synthesize high-quality atomic layer films with boron-, nitrogen- and carbon-containing atomic layers with full range of compositions. Using this approach, the electrical resistance, carrier mobilities and bandgaps of these atomic layers can be tuned from conductor to semiconductor to insulator. Combining this technique with lithography, local conversion could be realized at the nanometre scale, enabling the fabrication of in-plane atomic layer structures consisting of graphene, boron nitride and boron carbonitride. This is a step towards scalable synthesis of atomically thin two-dimensional integrated circuits.

  9. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling.

    PubMed

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2016-01-01

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene. PMID:26645468

  10. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling

    NASA Astrophysics Data System (ADS)

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2015-12-01

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene. Electronic supplementary information (ESI) available: Three TEM movies, additional TEM data corresponding to movies, calculated models, and lifetime results. See DOI: 10.1039/c5nr05913e

  11. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    NASA Astrophysics Data System (ADS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-05-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (<10-11 A/cm2) for Ar+ ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  12. Optical limiting properties and mechanisms of single-layer graphene dispersions in heavy-atom solvents.

    PubMed

    Yan, Lihe; Xiong, Yaobing; Si, Jinhai; Sun, Xuehui; Yi, Wenhui; Hou, Xun

    2014-12-29

    The optical limiting (OL) properties of single-layer graphene dispersions in different solvents were studied using a nanosecond pulse laser. The graphene dispersions, especially in heavy-atom solvents, showed much better OL properties compared with referenced C60-toluene solution. The dependences of OL thresholds and nonlinear scattering (NLS) intensities on the solvent surface tensions indicated that, NLS effect played an important role in the OL process of graphene dispersions, while nonlinear absorption (NLA) effect might also contribute in solvents with heavy atoms. The NLA measurements further demonstrated the contribution of NLA effect to the excellent OL property of graphene dispersions in heavy-atom solvents. PMID:25607151

  13. Atomic-scale friction modulated by potential corrugation in multi-layered graphene materials

    SciTech Connect

    Zhuang, Chunqiang; Liu, Lei

    2015-03-21

    Friction is an important issue that has to be carefully treated for the fabrication of graphene-based nano-scale devices. So far, the friction mechanism of graphene materials on the atomic scale has not yet been clearly presented. Here, first-principles calculations were employed to unveil the friction behaviors and their atomic-scale mechanism. We found that potential corrugations on sliding surfaces dominate the friction force and the friction anisotropy of graphene materials. Higher friction forces correspond to larger corrugations of potential energy, which are tuned by the number of graphene layers. The friction anisotropy is determined by the regular distributions of potential energy. The sliding along a fold-line path (hollow-atop-hollow) has a relatively small potential energy barrier. Thus, the linear sliding observed in macroscopic friction experiments may probably be attributed to the fold-line sliding mode on the atomic scale. These findings can also be extended to other layer-structure materials, such as molybdenum disulfide (MoS{sub 2}) and graphene-like BN sheets.

  14. Surface diffusion coefficient of Au atoms on single layer graphene grown on Cu

    SciTech Connect

    Ruffino, F. Cacciato, G.; Grimaldi, M. G.

    2014-02-28

    A 5 nm thick Au film was deposited on single layer graphene sheets grown on Cu. By thermal processes, the dewetting phenomenon of the Au film on the graphene was induced so to form Au nanoparticles. The mean radius, surface-to-surface distance, and surface density evolution of the nanoparticles on the graphene sheets as a function of the annealing temperature were quantified by scanning electron microscopy analyses. These quantitative data were analyzed within the classical mean-field nucleation theory so to obtain the temperature-dependent Au atoms surface diffusion coefficient on graphene: D{sub S}(T)=[(8.2±0.6)×10{sup −8}]exp[−(0.31±0.02(eV)/(at) )/kT] cm{sup 2}/s.

  15. Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability

    NASA Astrophysics Data System (ADS)

    Cheol Shin, Woo; Yong Kim, Taek; Sul, Onejae; Jin Cho, Byung

    2012-07-01

    We demonstrate that ultrathin poly(4-vinylphenol) (PVP) acts as an effective organic seeding layer for atomic layer deposition (ALD) of high-k dielectric on large-scale graphene fabricated by chemical vapor deposition (CVD). While identical ALD conditions result in incomplete and rough dielectric deposition on CVD graphene, the reactive groups provided by the PVP seeding layer yield conformal and pinhole-free dielectric films throughout the large-scale graphene. Top-gate graphene field effect transistors fabricated with the high quality, PVP-seeded Al2O3 gate dielectric show superior carrier mobility and enhanced reliability performance, which are desirable for graphene nanoelectronics.

  16. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene [Plus Supplemental Information

    SciTech Connect

    Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J.; Robinson, Jeremy T.; Wallace, Robert M.; Mayer, Theresa S.; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A.

    2014-11-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. We report the direct growth of highly crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG). Raman spectroscopy and photoluminescence confirms high-quality WSe2 monolayers; while transmission electron microscopy shows an atomically sharp interface and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that a tunnel barrier exists due to the van der Waals gap, and is supported by density functional theory that predicts a 1.6 eV barrier for transport from WSe2 to graphene.

  17. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene [Plus Supplemental Information

    DOE PAGESBeta

    Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; et al

    2014-11-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. We report the direct growth of highly crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG). Raman spectroscopy and photoluminescence confirms high-quality WSe2 monolayers; while transmission electron microscopy shows an atomically sharp interface and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that a tunnel barrier exists due to the van der Waals gap, and is supported by density functional theorymore » that predicts a 1.6 eV barrier for transport from WSe2 to graphene.« less

  18. High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

    SciTech Connect

    Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke; Xie, Haifen; Zhao, Xiaojing; Liu, Feng

    2014-07-21

    Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.

  19. Nanopatterning and Characterization of Inorganic Films Grown by Atomic Layer Deposition on Silicon and Graphene Substrates

    NASA Astrophysics Data System (ADS)

    Alaboson, Justice M. P.

    The research presented in this dissertation examines the incorporation, nanopatterning and characterization of atomic layer deposited (ALD) films on existing and new materials, motivated by relevance to current Si microelectronics technology and to inform future efforts beyond Si. ALD provides two key benefits. First, the atomic monolayer precision and conformal nature of ALD growth provides an ease of integration with non-planar and complex substrates, and architectures, which is found to be increasingly relevant to microelectronics and nanotechnology in general. In addition, surface templating permits spatially selective ALD growth, enabling three-dimensional surface engineering of materials. Surface templating strategies relying on atomic force microscope (AFM) nanopatterning and self-assembled monolayers are investigated. Control over ALD growth was first demonstrated on Si by tuning the surface hydroxyl concentration via hydroxylation, hydrogenation, and alkylation with organic self-assembled monolayers. The differences in ALD nucleation on these surfaces were exploited to achieve selective ALD by spatially defining hydroxyl regions via AFM field induced oxidation. Graphene, though promising as an electronic material, is highly hydrophobic and inert. Control over surface chemistry and lithographic engineering of graphene is therefore crucial for incorporation with complementary electronic materials. First, surface modification of graphene was demonstrated with conductive AFM (cAFM) nanopatterning. cAFM nanopatterning locally oxidizes epitaxial graphene, with the oxidation kinetics dependent on the surface, interface, and bulk structure of epitaxial graphene. This surface functionalization by cAFM nanopatterning enabled the selective growth of ALD ZnO. Next, non-covalent organic self- assembled monolayers was used to seed the growth of ALD high- k dielectric films on graphene, an important challenge to the realization of graphene-based field effect transistors

  20. FAST TRACK COMMUNICATION: Electronic structure of a graphene/hexagonal-BN heterostructure grown on Ru(0001) by chemical vapor deposition and atomic layer deposition: extrinsically doped graphene

    NASA Astrophysics Data System (ADS)

    Bjelkevig, Cameron; Mi, Zhou; Xiao, Jie; Dowben, P. A.; Wang, Lu; Mei, Wai-Ning; Kelber, Jeffry A.

    2010-08-01

    A significant BN-to-graphene charge donation is evident in the electronic structure of a graphene/h-BN(0001) heterojunction grown by chemical vapor deposition and atomic layer deposition directly on Ru(0001), consistent with density functional theory. This filling of the lowest unoccupied state near the Brillouin zone center has been characterized by combined photoemission/k vector resolved inverse photoemission spectroscopies, and Raman and scanning tunneling microscopy/spectroscopy. The unoccupied σ*(Γ1 +) band dispersion yields an effective mass of 0.05 me for graphene in the graphene/h-BN(0001) heterostructure, in spite of strong perturbations to the graphene conduction band edge placement.

  1. Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.

    PubMed

    Lin, Yu-Chuan; Chang, Chih-Yuan S; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J; Robinson, Jeremy T; Wallace, Robert M; Mayer, Theresa S; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A

    2014-12-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF). PMID:25383798

  2. Bottom-gate coplanar graphene transistors with enhanced graphene adhesion on atomic layer deposition Al2O3

    NASA Astrophysics Data System (ADS)

    Park, Dong-Wook; Mikael, Solomon; Chang, Tzu-Hsuan; Gong, Shaoqin; Ma, Zhenqiang

    2015-03-01

    A graphene transistor with a bottom-gate coplanar structure and an atomic layer deposition (ALD) aluminum oxide (Al2O3) gate dielectric is demonstrated. Wetting properties of ALD Al2O3 under different deposition conditions are investigated by measuring the surface contact angle. It is observed that the relatively hydrophobic surface is suitable for adhesion between graphene and ALD Al2O3. To achieve hydrophobic surface of ALD Al2O3, a methyl group (CH3)-terminated deposition method has been developed and compared with a hydroxyl group (OH)-terminated deposition. Based on this approach, bottom-gate coplanar graphene field-effect transistors are fabricated and characterized. A post-thermal annealing process improves the performance of the transistors by enhancing the contacts between the source/drain metal and graphene. The fabricated transistor shows an Ion/Ioff ratio, maximum transconductance, and field-effect mobility of 4.04, 20.1 μS at VD = 0.1 V, and 249.5 cm2/V.s, respectively.

  3. Interactions between fluorescence of atomically layered graphene oxide and metallic nanoparticles

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Li, Shao-Sian; Yeh, Yun-Chieh; Yu, Chen-Chieh; Chen, Hsuen-Li; Li, Feng-Chieh; Chang, Yu-Ming; Chen, Chun-Wei

    2013-01-01

    Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp2- and sp3-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the interactions between the fluorescence of two-dimensional layered materials and the LSPR effect.Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp2- and sp3-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the

  4. Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition.

    PubMed

    Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Shaygan, Mehrdad; Turner, Kevin T; Bargatin, Igor

    2016-04-15

    We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al2O3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young's modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young's modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed. PMID:26926386

  5. Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Shaygan, Mehrdad; Turner, Kevin T.; Bargatin, Igor

    2016-04-01

    We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al2O3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young’s modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young’s modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed.

  6. Density Functional Theory Study of Atomic Layer Deposition of Zinc Oxide on Graphene.

    PubMed

    Ali, Amgad Ahmed; Hashim, Abdul Manaf

    2015-12-01

    The dissociation of zinc ions (Zn(2+)) from vapor-phase zinc acetylacetonate, Zn(C5H7O2)2, or Zn(acac)2 and its adsorption onto graphene oxide via atomic layer deposition (ALD) were studied using a quantum mechanics approach. Density functional theory (DFT) was used to obtain an approximate solution to the Schrödinger equation. The graphene oxide cluster model was used to represent the surface of the graphene film after pre-oxidation. In this study, the geometries of reactants, transition states, and products were optimized using the B3LYB/6-31G** level of theory or higher. Furthermore, the relative energies of the various intermediates and products in the gas-phase radical mechanism were calculated at the B3LYP/6-311++G** and MP2/6-311 + G(2df,2p) levels of theory. Additionally, a molecular orbital (MO) analysis was performed for the products of the decomposition of the Zn(acac)2 complex to investigate the dissociation of Zn(2+) and the subsequent adsorption of H atoms on the C5H7O2 cluster to form acetylacetonate enol. The reaction energies were calculated, and the reaction mechanism was accordingly proposed. A simulation of infrared (IR) properties was performed using the same approach to support the proposed mechanism via a complete explanation of bond forming and breaking during each reaction step. PMID:26198282

  7. Density Functional Theory Study of Atomic Layer Deposition of Zinc Oxide on Graphene

    NASA Astrophysics Data System (ADS)

    Ali, Amgad Ahmed; Hashim, Abdul Manaf

    2015-07-01

    The dissociation of zinc ions (Zn2+) from vapor-phase zinc acetylacetonate, Zn(C5H7O2)2, or Zn(acac)2 and its adsorption onto graphene oxide via atomic layer deposition (ALD) were studied using a quantum mechanics approach. Density functional theory (DFT) was used to obtain an approximate solution to the Schrödinger equation. The graphene oxide cluster model was used to represent the surface of the graphene film after pre-oxidation. In this study, the geometries of reactants, transition states, and products were optimized using the B3LYB/6-31G** level of theory or higher. Furthermore, the relative energies of the various intermediates and products in the gas-phase radical mechanism were calculated at the B3LYP/6-311++G** and MP2/6-311 + G(2df,2p) levels of theory. Additionally, a molecular orbital (MO) analysis was performed for the products of the decomposition of the Zn(acac)2 complex to investigate the dissociation of Zn2+ and the subsequent adsorption of H atoms on the C5H7O2 cluster to form acetylacetonate enol. The reaction energies were calculated, and the reaction mechanism was accordingly proposed. A simulation of infrared (IR) properties was performed using the same approach to support the proposed mechanism via a complete explanation of bond forming and breaking during each reaction step.

  8. Interactions between fluorescence of atomically layered graphene oxide and metallic nanoparticles.

    PubMed

    Wang, Yu; Li, Shao-Sian; Yeh, Yun-Chieh; Yu, Chen-Chieh; Chen, Hsuen-Li; Li, Feng-Chieh; Chang, Yu-Ming; Chen, Chun-Wei

    2013-02-21

    Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp(2)- and sp(3)-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the interactions between the fluorescence of two-dimensional layered materials and the LSPR effect. PMID:23340692

  9. Single-Atom Pd₁/Graphene Catalyst Achieved by Atomic Layer Deposition: Remarkable Performance in Selective Hydrogenation of 1,3-Butadiene.

    PubMed

    Yan, Huan; Cheng, Hao; Yi, Hong; Lin, Yue; Yao, Tao; Wang, Chunlei; Li, Junjie; Wei, Shiqiang; Lu, Junling

    2015-08-26

    We reported that atomically dispersed Pd on graphene can be fabricated using the atomic layer deposition technique. Aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and X-ray absorption fine structure spectroscopy both confirmed that isolated Pd single atoms dominantly existed on the graphene support. In selective hydrogenation of 1,3-butadiene, the single-atom Pd1/graphene catalyst showed about 100% butenes selectivity at 95% conversion at a mild reaction condition of about 50 °C, which is likely due to the changes of 1,3-butadiene adsorption mode and enhanced steric effect on the isolated Pd atoms. More importantly, excellent durability against deactivation via either aggregation of metal atoms or carbonaceous deposits during a total 100 h of reaction time on stream was achieved. Therefore, the single-atom catalysts may open up more opportunities to optimize the activity, selectivity, and durability in selective hydrogenation reactions. PMID:26268551

  10. Atomic-scale observation of rotational misorientation in suspended few-layer graphene sheets.

    PubMed

    Singh, Manoj K; Titus, Elby; Gonçalves, Gil; Marques, Paula A A P; Bdikin, Igor; Kholkin, Andrei L; Gracio, José J A

    2010-05-01

    Single or few-layer graphene (FLG) sheets offer extraordinary electronic, thermal and mechanical properties and are expected to find a variety of applications. Fully exploiting the properties of graphene will require a method for the production of high-quality graphene sheets (almost pristine graphene) in large quantities. In this regard, we report a two-step method for obtaining a homogenous colloidal suspension of single or FLG sheets up to 0.15 mg ml(-1) in N,N-dimethylformamide solution. The graphene nanostructures are directly imaged using a high-resolution transmission electron microscope (HRTEM) operated at 200 kV with a point resolution of 0.16 nm. We observed rotational misorientation within the flake in the HRTEM images of 2, 4 and 6 layers of graphene sheets, giving rise to Moiré patterns. By filtering in the frequency domain using a Fourier transform, we reconstruct the graphene lattice of each sheet and determine the relative rotation between consecutive graphene layers up, to six separate sheets. Direct evidence is obtained for FLG sheets with packing that is different to the standard AB Bernal packing of bulk graphite. Furthermore, we observed periodic ripples in suspended graphene sheets in our TEM measurements. Electrostatic force microscopy was used to characterize the electric potential distribution on the surface of FLG sheets on SiO2/Si substrates in ambient conditions. The FLG sheets were found to exhibit a conducting nature with small potential variations on the surface. PMID:20648314

  11. Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO

    NASA Astrophysics Data System (ADS)

    Park, Kyung Sun; Kim, Sejoon; Kim, Hongbum; Kwon, Deokhyeon; Koo Lee, Yong-Eun; Min, Sung-Wook; Im, Seongil; Choi, Hyoung Joon; Lim, Seulky; Shin, Hyunjung; Koo, Sang Man; Sung, Myung Mo

    2015-10-01

    Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also

  12. Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers.

    PubMed

    Alaboson, Justice M P; Wang, Qing Hua; Emery, Jonathan D; Lipson, Albert L; Bedzyk, Michael J; Elam, Jeffrey W; Pellin, Michael J; Hersam, Mark C

    2011-06-28

    The development of high-performance graphene-based nanoelectronics requires the integration of ultrathin and pinhole-free high-k dielectric films with graphene at the wafer scale. Here, we demonstrate that self-assembled monolayers of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) act as effective organic seeding layers for atomic layer deposition (ALD) of HfO(2) and Al(2)O(3) on epitaxial graphene on SiC(0001). The PTCDA is deposited via sublimation in ultrahigh vacuum and shown to be highly ordered with low defect density by molecular-resolution scanning tunneling microscopy. Whereas identical ALD conditions lead to incomplete and rough dielectric deposition on bare graphene, the chemical functionality provided by the PTCDA seeding layer yields highly uniform and conformal films. The morphology and chemistry of the dielectric films are characterized by atomic force microscopy, ellipsometry, cross-sectional scanning electron microscopy, and X-ray photoelectron spectroscopy, while high-resolution X-ray reflectivity measurements indicate that the underlying graphene remains intact following ALD. Using the PTCDA seeding layer, metal-oxide-graphene capacitors fabricated with a 3 nm Al(2)O(3) and 10 nm HfO(2) dielectric stack show high capacitance values of ∼700 nF/cm(2) and low leakage currents of ∼5 × 10(-9) A/cm(2) at 1 V applied bias. These results demonstrate the viability of sublimated organic self-assembled monolayers as seeding layers for high-k dielectric films in graphene-based nanoelectronics. PMID:21553842

  13. A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Han, Kyu Seok; Kalode, Pranav Y.; Koo Lee, Yong-Eun; Kim, Hongbum; Lee, Lynn; Sung, Myung Mo

    2016-02-01

    Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 Å resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility.Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 Å resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08016a

  14. Probing the Structure and Chemistry of Perylenetetracarboxylic Dianhydride on Graphene Before and After Atomic Layer Deposition of Alumina

    PubMed Central

    Johns, James E.; Karmel, Hunter J.; Alaboson, Justice M. P.; Hersam, Mark C.

    2012-01-01

    The superlative electronic properties of graphene suggest its use as the foundation of next generation integrated circuits. However, this application requires precise control of the interface between graphene and other materials, especially the metal oxides that are commonly used as gate dielectrics. Towards that end, organic seeding layers have been empirically shown to seed ultrathin dielectric growth on graphene via atomic layer deposition (ALD), although the underlying chemical mechanisms and structural details of the molecule/dielectric interface remain unknown. Here, confocal resonance Raman spectroscopy is employed to quantify the structure and chemistry of monolayers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphene before and after deposition of alumina with the ALD precursors trimethyl aluminum (TMA) and water. Photoluminescence measurements provide further insight into the details of the growth mechanism, including the transition between layer-by-layer growth and island formation. Overall, these results reveal that PTCDA is not consumed during ALD, thereby preserving a well-defined and passivating organic interface between graphene and deposited dielectric thin films. PMID:22905282

  15. Probing the Structure and Chemistry of Perylenetetracarboxylic Dianhydride on Graphene Before and After Atomic Layer Deposition of Alumina.

    PubMed

    Johns, James E; Karmel, Hunter J; Alaboson, Justice M P; Hersam, Mark C

    2012-07-11

    The superlative electronic properties of graphene suggest its use as the foundation of next generation integrated circuits. However, this application requires precise control of the interface between graphene and other materials, especially the metal oxides that are commonly used as gate dielectrics. Towards that end, organic seeding layers have been empirically shown to seed ultrathin dielectric growth on graphene via atomic layer deposition (ALD), although the underlying chemical mechanisms and structural details of the molecule/dielectric interface remain unknown. Here, confocal resonance Raman spectroscopy is employed to quantify the structure and chemistry of monolayers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphene before and after deposition of alumina with the ALD precursors trimethyl aluminum (TMA) and water. Photoluminescence measurements provide further insight into the details of the growth mechanism, including the transition between layer-by-layer growth and island formation. Overall, these results reveal that PTCDA is not consumed during ALD, thereby preserving a well-defined and passivating organic interface between graphene and deposited dielectric thin films. PMID:22905282

  16. Quantitative secondary electron imaging for work function extraction at atomic level and layer identification of graphene

    NASA Astrophysics Data System (ADS)

    Zhou, Yangbo; Fox, Daniel S.; Maguire, Pierce; O'Connell, Robert; Masters, Robert; Rodenburg, Cornelia; Wu, Hanchun; Dapor, Maurizio; Chen, Ying; Zhang, Hongzhou

    2016-02-01

    Two-dimensional (2D) materials usually have a layer-dependent work function, which require fast and accurate detection for the evaluation of their device performance. A detection technique with high throughput and high spatial resolution has not yet been explored. Using a scanning electron microscope, we have developed and implemented a quantitative analytical technique which allows effective extraction of the work function of graphene. This technique uses the secondary electron contrast and has nanometre-resolved layer information. The measurement of few-layer graphene flakes shows the variation of work function between graphene layers with a precision of less than 10 meV. It is expected that this technique will prove extremely useful for researchers in a broad range of fields due to its revolutionary throughput and accuracy.

  17. Quantitative secondary electron imaging for work function extraction at atomic level and layer identification of graphene

    PubMed Central

    Zhou, Yangbo; Fox, Daniel S; Maguire, Pierce; O’Connell, Robert; Masters, Robert; Rodenburg, Cornelia; Wu, Hanchun; Dapor, Maurizio; Chen, Ying; Zhang, Hongzhou

    2016-01-01

    Two-dimensional (2D) materials usually have a layer-dependent work function, which require fast and accurate detection for the evaluation of their device performance. A detection technique with high throughput and high spatial resolution has not yet been explored. Using a scanning electron microscope, we have developed and implemented a quantitative analytical technique which allows effective extraction of the work function of graphene. This technique uses the secondary electron contrast and has nanometre-resolved layer information. The measurement of few-layer graphene flakes shows the variation of work function between graphene layers with a precision of less than 10 meV. It is expected that this technique will prove extremely useful for researchers in a broad range of fields due to its revolutionary throughput and accuracy. PMID:26878907

  18. Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO.

    PubMed

    Park, Kyung Sun; Kim, Sejoon; Kim, Hongbum; Kwon, Deokhyeon; Lee, Yong-Eun Koo; Min, Sung-Wook; Im, Seongil; Choi, Hyoung Joon; Lim, Seulky; Shin, Hyunjung; Koo, Sang Man; Sung, Myung Mo

    2015-11-14

    Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity. PMID:26452020

  19. A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition.

    PubMed

    Han, Kyu Seok; Kalode, Pranav Y; Koo Lee, Yong-Eun; Kim, Hongbum; Lee, Lynn; Sung, Myung Mo

    2016-02-25

    Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 Å resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility. PMID:26864992

  20. Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene

    NASA Astrophysics Data System (ADS)

    Amani, Matin; Burke, Robert A.; Proie, Robert M.; Dubey, Madan

    2015-03-01

    Two-dimensional materials, such as graphene and its analogues, have been investigated by numerous researchers for high performance flexible and conformal electronic systems, because they offer the ultimate level of thickness scaling, atomically smooth surfaces and high crystalline quality. Here, we use layer-by-layer transfer of large area molybdenum disulphide (MoS2) and graphene grown by chemical vapor deposition (CVD) to demonstrate electronics on flexible polyimide (PI) substrates. On the same PI substrate, we are able to simultaneously fabricate MoS2 based logic, non-volatile memory cells with graphene floating gates, photo-detectors and MoS2 transistors with tunable source and drain contacts. We are also able to demonstrate that these flexible heterostructure devices have very high electronic performance, comparable to four point measurements taken on SiO2 substrates, with on/off ratios >107 and field effect mobilities as high as 16.4 cm2 V-1 s-1. Additionally, the heterojunctions show high optoelectronic sensitivity and were operated as photodetectors with responsivities over 30 A W-1. Through local gating of the individual graphene/MoS2 contacts, we are able to tune the contact resistance over the range of 322-1210 Ω mm for each contact, by modulating the graphene work function. This leads to devices with tunable and multifunctional performance that can be implemented in a conformable platform.

  1. Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene.

    PubMed

    Amani, Matin; Burke, Robert A; Proie, Robert M; Dubey, Madan

    2015-03-20

    Two-dimensional materials, such as graphene and its analogues, have been investigated by numerous researchers for high performance flexible and conformal electronic systems, because they offer the ultimate level of thickness scaling, atomically smooth surfaces and high crystalline quality. Here, we use layer-by-layer transfer of large area molybdenum disulphide (MoS2) and graphene grown by chemical vapor deposition (CVD) to demonstrate electronics on flexible polyimide (PI) substrates. On the same PI substrate, we are able to simultaneously fabricate MoS2 based logic, non-volatile memory cells with graphene floating gates, photo-detectors and MoS2 transistors with tunable source and drain contacts. We are also able to demonstrate that these flexible heterostructure devices have very high electronic performance, comparable to four point measurements taken on SiO2 substrates, with on/off ratios >10(7) and field effect mobilities as high as 16.4 cm(2) V(-1) s(-1). Additionally, the heterojunctions show high optoelectronic sensitivity and were operated as photodetectors with responsivities over 30 A W(-1). Through local gating of the individual graphene/MoS2 contacts, we are able to tune the contact resistance over the range of 322-1210 Ω mm for each contact, by modulating the graphene work function. This leads to devices with tunable and multifunctional performance that can be implemented in a conformable platform. PMID:25709100

  2. Topography, complex refractive index, and conductivity of graphene layers measured by correlation of optical interference contrast, atomic force, and back scattered electron microscopy

    SciTech Connect

    Vaupel, Matthias Dutschke, Anke; Wurstbauer, Ulrich; Pasupathy, Abhay; Hitzel, Frank

    2013-11-14

    The optical phase shift by reflection on graphene is measured by interference contrast microscopy. The height profile across graphene layers on 300 nm thick SiO{sub 2} on silicon is derived from the phase profile. The complex refractive index and conductivity of graphene layers on silicon with 2 nm thin SiO{sub 2} are evaluated from a phase profile, while the height profile of the layers is measured by atomic force microscopy. It is observed that the conductivity measured on thin SiO{sub 2} is significantly greater than on thick SiO{sub 2}. Back scattered electron contrast of graphene layers is correlated to the height of graphene layers.

  3. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts

    DOE PAGESBeta

    Gearba, Raluca I.; Mueller, Kory M.; Veneman, Peter A.; Holliday, Bradley J.; Chan, Calvin K.; Stevenson, Keith J.

    2015-05-09

    Owing to its high conductivity, graphene holds promise as an electrode for energy devices such as batteries and photovoltaics. However, to this end, the work function and doping levels in graphene need to be precisely tuned. One promising route for modifying graphene’s electronic properties is via controlled covalent electrochemical grafting of molecules. We show that by employing diaryliodonium salts instead of the commonly used diazonium salts, spontaneous functionalization is avoided. This then allows for precise tuning of the grafting density. Moreover, by employing bis(4-nitrophenyl)iodonium(III) tetrafluoroborate (DNP) salt calibration curves, the surface functionalization density (coverage) of glassy carbon was controlled usingmore » cyclic voltammetry in varying salt concentrations. These electro-grafting conditions and calibration curves translated directly over to modifying single layer epitaxial graphene substrates (grown on insulating 6H-SiC (0 0 0 1)). In addition to quantifying the functionalization densities using electrochemical methods, samples with low grafting densities were characterized by low-temperature scanning tunneling microscopy (LT-STM). We show that the use of buffer-layer free graphene substrates is required for clear observation of the nitrophenyl modifications. Furthermore, atomically-resolved STM images of single site modifications were obtained, showing no preferential grafting at defect sites or SiC step edges as supposed previously in the literature. Most of the grafts exhibit threefold symmetry, but occasional extended modifications (larger than 4 nm) were observed as well.« less

  4. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts

    SciTech Connect

    Gearba, Raluca I.; Mueller, Kory M.; Veneman, Peter A.; Holliday, Bradley J.; Chan, Calvin K.; Stevenson, Keith J.

    2015-05-09

    Owing to its high conductivity, graphene holds promise as an electrode for energy devices such as batteries and photovoltaics. However, to this end, the work function and doping levels in graphene need to be precisely tuned. One promising route for modifying graphene’s electronic properties is via controlled covalent electrochemical grafting of molecules. We show that by employing diaryliodonium salts instead of the commonly used diazonium salts, spontaneous functionalization is avoided. This then allows for precise tuning of the grafting density. Moreover, by employing bis(4-nitrophenyl)iodonium(III) tetrafluoroborate (DNP) salt calibration curves, the surface functionalization density (coverage) of glassy carbon was controlled using cyclic voltammetry in varying salt concentrations. These electro-grafting conditions and calibration curves translated directly over to modifying single layer epitaxial graphene substrates (grown on insulating 6H-SiC (0 0 0 1)). In addition to quantifying the functionalization densities using electrochemical methods, samples with low grafting densities were characterized by low-temperature scanning tunneling microscopy (LT-STM). We show that the use of buffer-layer free graphene substrates is required for clear observation of the nitrophenyl modifications. Furthermore, atomically-resolved STM images of single site modifications were obtained, showing no preferential grafting at defect sites or SiC step edges as supposed previously in the literature. Most of the grafts exhibit threefold symmetry, but occasional extended modifications (larger than 4 nm) were observed as well.

  5. Enhanced Breakdown Reliability and Spatial Uniformity of Atomic Layer Deposited High-k Gate Dielectrics on Graphene via Organic Seeding Layers

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Filippone, Stephen; Karmel, Hunter; Johns, James; Alaboson, Justice; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark

    2013-03-01

    Ultra-thin high- κ top-gate dielectrics are essential for high-speed graphene-based nanoelectronic circuits. Motivated by the need for high reliability and spatial uniformity, we report here the first statistical analysis of the breakdown characteristics of dielectrics grown on graphene. Based on these measurements, a rational approach is devised that simultaneously optimizes the gate capacitance and the key parameters of large-area uniformity and dielectric strength. In particular, vertically heterogeneous oxide stacks grown via atomic-layer deposition (ALD) seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) organic monolayer result in improved reliability (Weibull shape parameter β > 25) compared to the control dielectric directly grown on graphene without PTCDA (β < 1). The optimized sample also showed a large breakdown strength (Weibull scale parameter, EBD > 7 MV/cm) that is comparable to that of the control dielectric grown on Si substrates.

  6. Bottom-gate coplanar graphene transistors with enhanced graphene adhesion on atomic layer deposition Al{sub 2}O{sub 3}

    SciTech Connect

    Park, Dong-Wook; Mikael, Solomon; Chang, Tzu-Hsuan; Ma, Zhenqiang; Gong, Shaoqin

    2015-03-09

    A graphene transistor with a bottom-gate coplanar structure and an atomic layer deposition (ALD) aluminum oxide (Al{sub 2}O{sub 3}) gate dielectric is demonstrated. Wetting properties of ALD Al{sub 2}O{sub 3} under different deposition conditions are investigated by measuring the surface contact angle. It is observed that the relatively hydrophobic surface is suitable for adhesion between graphene and ALD Al{sub 2}O{sub 3}. To achieve hydrophobic surface of ALD Al{sub 2}O{sub 3}, a methyl group (CH{sub 3})-terminated deposition method has been developed and compared with a hydroxyl group (OH)-terminated deposition. Based on this approach, bottom-gate coplanar graphene field-effect transistors are fabricated and characterized. A post-thermal annealing process improves the performance of the transistors by enhancing the contacts between the source/drain metal and graphene. The fabricated transistor shows an I{sub on}/I{sub off} ratio, maximum transconductance, and field-effect mobility of 4.04, 20.1 μS at V{sub D} = 0.1 V, and 249.5 cm{sup 2}/V·s, respectively.

  7. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

    PubMed

    Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

    2016-06-01

    The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts. PMID:27124605

  8. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

    NASA Astrophysics Data System (ADS)

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-02-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer.

  9. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

    PubMed Central

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-01-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer. PMID:26861833

  10. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors.

    PubMed

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-01-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8" glass wafer. PMID:26861833

  11. Discrete Atomic Layers at the Molecular Level

    NASA Astrophysics Data System (ADS)

    Yorimitsu, Hideki; Bhanuchandra, M.

    2015-12-01

    In this review, we deal with the syntheses of large discrete atomic layers at the molecular level. Spectroscopic measurements as well as X-ray crystallographic analyses lead to unambiguous characterizations of these layers. The molecular atomic layers can be considered to be parts of graphenes and related atomic layers, thereby helping to understand such indefinitely huge atomic layers or serving as seeds for the controlled synthesis of nanocarbons.

  12. Dispersion coefficients for the interactions of the alkali-metal and alkaline-earth-metal ions and inert-gas atoms with a graphene layer

    NASA Astrophysics Data System (ADS)

    Kaur, Kiranpreet; Arora, Bindiya; Sahoo, B. K.

    2015-09-01

    Largely motivated by a number of applications, the van der Waals dispersion coefficients C3 of the alkali-metal ions Li+,Na+,K+, and Rb+, the alkaline-earth-metal ions Ca+,Sr+,Ba+, and Ra+, and the inert-gas atoms He, Ne, Ar, and Kr with a graphene layer are determined precisely within the framework of the Dirac model. For these calculations, we evaluate the dynamic polarizabilities of the above atomic systems very accurately by evaluating the transition matrix elements employing relativistic many-body methods and using the experimental values of the excitation energies. The dispersion coefficients are given as functions of the separation distance of an atomic system from the graphene layer and the ambiance temperature during the interactions. For easy extraction of these coefficients, we give a logistic fit to the functional forms of the dispersion coefficients in terms of the separation distances at room temperature.

  13. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition.

    PubMed

    Zheng, Li; Cheng, Xinhong; Yu, Yuehui; Xie, Yahong; Li, Xiaolong; Wang, Zhongjian

    2015-02-01

    Graphene has been drawing worldwide attention since its discovery in 2004. In order to realize graphene-based devices, thin, uniform-coverage and pinhole-free dielectric films with high permittivity on top of graphene are required. Here we report the direct growth of Al2O3-doped HfO2 films onto graphene by H2O-based atom layer deposition (ALD). Al2O3-onto-HfO2 stacks benefited the doping of Al2O3 into HfO2 matrices more than HfO2-onto-Al2O3 stacks did due to the micro-molecular property of Al2O3 and the high chemical activity of trimethylaluminum (TMA). Al2O3 acted as a network modifier, maintained the amorphous structure of the film even to 800 °C, and made the film smooth with a root mean square (RMS) roughness of 0.8 nm, comparable to the surface of pristine graphene. The capacitance and the relative permittivity of Al2O3-onto-HfO2 stacks were up to 1.18 μF cm(-2) and 12, respectively, indicating the high quality of Al2O3-doped HfO2 films on graphene. Moreover, the growth process of Al2O3-doped HfO2 films introduced no detective defects into graphene confirmed by Raman measurements. PMID:25519447

  14. Dual-protection of a graphene-sulfur composite by a compact graphene skin and an atomic layer deposited oxide coating for a lithium-sulfur battery.

    PubMed

    Yu, Mingpeng; Wang, Aiji; Tian, Fuyang; Song, Hongquan; Wang, Yinshu; Li, Chun; Hong, Jong-Dal; Shi, Gaoquan

    2015-03-12

    A reduced graphene oxide (rGO)-sulfur composite aerogel with a compact self-assembled rGO skin was further modified by an atomic layer deposition (ALD) of ZnO or MgO layer, and used as a free-standing electrode material of a lithium-sulfur (Li-S) battery. The rGO skin and ALD-oxide coating worked as natural and artificial barriers to constrain the polysulfides within the cathode region. As a result, the Li-S battery based on this electrode material exhibited superior cycling stability, good rate capability and high coulombic efficiency. Furthermore, ALD-ZnO coating was tested for performance improvement and found to be more effective than ALD-MgO coating. The ZnO modified G-S electrode with 55 wt% sulfur loading delivered a maximum discharge capacity of 998 mA h g(-1) at a current density of 0.2 C. A high capacity of 846 mA h g(-1) was achieved after charging/discharging for 100 cycles with a coulombic efficiency of over 92%. In the case of using LiNO3 as a shuttle inhibitor, this electrode showed an initial discharge capacity of 796 mA h g(-1) and a capacity retention of 81% after 250 cycles at a current density of 1 C with an average coulombic efficiency higher than 99.7%. PMID:25721407

  15. Molecular memory with atomically smooth graphene contacts

    PubMed Central

    2013-01-01

    We report the use of bilayer graphene as an atomically smooth contact for nanoscale devices. A two-terminal bucky-ball (C60) based molecular memory is fabricated with bilayer graphene as a contact on the polycrystalline nickel electrode. Graphene provides an atomically smooth covering over an otherwise rough metal surface. The use of graphene additionally prohibits the electromigration of nickel into the C60 layer. The devices exhibit a low-resistance state in the first sweep cycle and irreversibly switch to a high-resistance state at 0.8 to 1.2 V bias. In the subsequent cycles, the devices retain the high-resistance state, thus making it write-once read-many memory. PMID:24225345

  16. Dual-protection of a graphene-sulfur composite by a compact graphene skin and an atomic layer deposited oxide coating for a lithium-sulfur battery

    NASA Astrophysics Data System (ADS)

    Yu, Mingpeng; Wang, Aiji; Tian, Fuyang; Song, Hongquan; Wang, Yinshu; Li, Chun; Hong, Jong-Dal; Shi, Gaoquan

    2015-03-01

    A reduced graphene oxide (rGO)-sulfur composite aerogel with a compact self-assembled rGO skin was further modified by an atomic layer deposition (ALD) of ZnO or MgO layer, and used as a free-standing electrode material of a lithium-sulfur (Li-S) battery. The rGO skin and ALD-oxide coating worked as natural and artificial barriers to constrain the polysulfides within the cathode region. As a result, the Li-S battery based on this electrode material exhibited superior cycling stability, good rate capability and high coulombic efficiency. Furthermore, ALD-ZnO coating was tested for performance improvement and found to be more effective than ALD-MgO coating. The ZnO modified G-S electrode with 55 wt% sulfur loading delivered a maximum discharge capacity of 998 mA h g-1 at a current density of 0.2 C. A high capacity of 846 mA h g-1 was achieved after charging/discharging for 100 cycles with a coulombic efficiency of over 92%. In the case of using LiNO3 as a shuttle inhibitor, this electrode showed an initial discharge capacity of 796 mA h g-1 and a capacity retention of 81% after 250 cycles at a current density of 1 C with an average coulombic efficiency higher than 99.7%.A reduced graphene oxide (rGO)-sulfur composite aerogel with a compact self-assembled rGO skin was further modified by an atomic layer deposition (ALD) of ZnO or MgO layer, and used as a free-standing electrode material of a lithium-sulfur (Li-S) battery. The rGO skin and ALD-oxide coating worked as natural and artificial barriers to constrain the polysulfides within the cathode region. As a result, the Li-S battery based on this electrode material exhibited superior cycling stability, good rate capability and high coulombic efficiency. Furthermore, ALD-ZnO coating was tested for performance improvement and found to be more effective than ALD-MgO coating. The ZnO modified G-S electrode with 55 wt% sulfur loading delivered a maximum discharge capacity of 998 mA h g-1 at a current density of 0.2 C. A

  17. In situ imaging and control of layer-by-layer femtosecond laser thinning of graphene

    NASA Astrophysics Data System (ADS)

    Li, D. W.; Zhou, Y. S.; Huang, X.; Jiang, L.; Silvain, J.-F.; Lu, Y. F.

    2015-02-01

    Although existing methods (chemical vapor deposition, mechanical exfoliation, etc.) are available to produce graphene, the lack of thickness control limits further graphene applications. In this study, we demonstrate an approach to precisely thin graphene films to a specific thickness using femtosecond (fs) laser raster scanning. By using appropriate laser fluence and scanning times, graphene thinning with an atomic layer precision, namely layer-by-layer graphene removal, has been realized. The fs laser used was configured in a four-wave mixing (FWM) system which can be used to distinguish graphene layer thickness and count the number of layers using the linear relationship between the FWM signal intensity and the graphene thickness. Furthermore, FWM imaging has been successfully applied to achieve in situ, real-time monitoring of the fs laser graphene thinning process. This method can not only realize the large-scale thinning of graphene with atomic layer precision, but also provide in situ, rapid imaging capability of graphene for an accurate assessment of the number of layers.Although existing methods (chemical vapor deposition, mechanical exfoliation, etc.) are available to produce graphene, the lack of thickness control limits further graphene applications. In this study, we demonstrate an approach to precisely thin graphene films to a specific thickness using femtosecond (fs) laser raster scanning. By using appropriate laser fluence and scanning times, graphene thinning with an atomic layer precision, namely layer-by-layer graphene removal, has been realized. The fs laser used was configured in a four-wave mixing (FWM) system which can be used to distinguish graphene layer thickness and count the number of layers using the linear relationship between the FWM signal intensity and the graphene thickness. Furthermore, FWM imaging has been successfully applied to achieve in situ, real-time monitoring of the fs laser graphene thinning process. This method can not

  18. Atomic covalent functionalization of graphene.

    PubMed

    Johns, James E; Hersam, Mark C

    2013-01-15

    Although graphene's physical structure is a single atom thick, two-dimensional, hexagonal crystal of sp(2) bonded carbon, this simple description belies the myriad interesting and complex physical properties attributed to this fascinating material. Because of its unusual electronic structure and superlative properties, graphene serves as a leading candidate for many next generation technologies including high frequency electronics, broadband photodetectors, biological and gas sensors, and transparent conductive coatings. Despite this promise, researchers could apply graphene more routinely in real-world technologies if they could chemically adjust graphene's electronic properties. For example, the covalent modification of graphene to create a band gap comparable to silicon (∼1 eV) would enable its use in digital electronics, and larger band gaps would provide new opportunities for graphene-based photonics. Toward this end, researchers have focused considerable effort on the chemical functionalization of graphene. Due to its high thermodynamic stability and chemical inertness, new methods and techniques are required to create covalent bonds without promoting undesirable side reactions or irreversible damage to the underlying carbon lattice. In this Account, we review and discuss recent theoretical and experimental work studying covalent modifications to graphene using gas phase atomic radicals. Atomic radicals have sufficient energy to overcome the kinetic and thermodynamic barriers associated with covalent reactions on the basal plane of graphene but lack the energy required to break the C-C sigma bonds that would destroy the carbon lattice. Furthermore, because they are atomic species, radicals substantially reduce the likelihood of unwanted side reactions that confound other covalent chemistries. Overall, these methods based on atomic radicals show promise for the homogeneous functionalization of graphene and the production of new classes of two

  19. Ultimate permeation across atomically thin porous graphene.

    PubMed

    Celebi, Kemal; Buchheim, Jakob; Wyss, Roman M; Droudian, Amirhossein; Gasser, Patrick; Shorubalko, Ivan; Kye, Jeong-Il; Lee, Changho; Park, Hyung Gyu

    2014-04-18

    A two-dimensional (2D) porous layer can make an ideal membrane for separation of chemical mixtures because its infinitesimal thickness promises ultimate permeation. Graphene--with great mechanical strength, chemical stability, and inherent impermeability--offers a unique 2D system with which to realize this membrane and study the mass transport, if perforated precisely. We report highly efficient mass transfer across physically perforated double-layer graphene, having up to a few million pores with narrowly distributed diameters between less than 10 nanometers and 1 micrometer. The measured transport rates are in agreement with predictions of 2D transport theories. Attributed to its atomic thicknesses, these porous graphene membranes show permeances of gas, liquid, and water vapor far in excess of those shown by finite-thickness membranes, highlighting the ultimate permeation these 2D membranes can provide. PMID:24744372

  20. Atomic Covalent Functionalization of Graphene

    PubMed Central

    Johns, James E.; Hersam, Mark C.

    2012-01-01

    Conspectus Although graphene’s physical structure is a single atom thick, two-dimensional, hexagonal crystal of sp2 bonded carbon, this simple description belies the myriad interesting and complex physical properties attributed to this fascinating material. Because of its unusual electronic structure and superlative properties, graphene serves as a leading candidate for many next generation technologies including high frequency electronics, broadband photodetectors, biological and gas sensors, and transparent conductive coatings. Despite this promise, researchers could apply graphene more routinely in real-world technologies if they could chemically adjust graphene’s electronic properties. For example, the covalent modification of graphene to create a band gap comparable to silicon (~1 eV) would enable its use in digital electronics, and larger band gaps would provide new opportunities for graphene-based photonics. Towards this end, researchers have focused considerable effort on the chemical functionalization of graphene. Due to its high thermodynamic stability and chemical inertness, new methods and techniques are required to create covalent bonds without promoting undesirable side reactions or irreversible damage to the underlying carbon lattice. In this Account, we review and discuss recent theoretical and experimental work studying covalent modifications to graphene using gas phase atomic radicals. Atomic radicals have sufficient energy to overcome the kinetic and thermodynamic barriers associated with covalent reactions on the basal plane of graphene but lack the energy required to break the C-C sigma bonds that would destroy the carbon lattice. Furthermore, because they are atomic species, radicals substantially reduce the likelihood of unwanted side reactions that confound other covalent chemistries. Overall, these methods based on atomic radicals show promise for the homogeneous functionalization of graphene and the production of new classes of two

  1. Atomic Layer Epitaxy of h-BN(0001) Multilayers on Co(0001) and Molecular Beam Epitaxy Growth of Graphene on h-BN(0001)/Co(0001).

    PubMed

    Driver, M Sky; Beatty, John D; Olanipekun, Opeyemi; Reid, Kimberly; Rath, Ashutosh; Voyles, Paul M; Kelber, Jeffry A

    2016-03-22

    The direct growth of hexagonal boron nitride (h-BN) by industrially scalable methods is of broad interest for spintronic and nanoelectronic device applications. Such applications often require atomically precise control of film thickness and azimuthal registry between layers and substrate. We report the formation, by atomic layer epitaxy (ALE), of multilayer h-BN(0001) films (up to 7 monolayers) on Co(0001). The ALE process employs BCl3/NH3 cycles at 600 K substrate temperature. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) data show that this process yields an increase in h-BN average film thickness linearly proportional to the number of BCl3/NH3 cycles, with BN layers in azimuthal registry with each other and with the Co(0001) substrate. LEED diffraction spot profile data indicate an average BN domain size of at least 1900 Å. Optical microscopy data indicate the presence of some domains as large as ∼20 μm. Transmission electron microscopy (TEM) and ambient exposure studies demonstrate macroscopic and microscopic continuity of the h-BN film, with the h-BN film highly conformal to the Co substrate. Photoemission data show that the h-BN(0001) film is p-type, with band bending near the Co/h-BN interface. Growth of graphene by molecular beam epitaxy (MBE) is observed on the surface of multilayer h-BN(0001) at temperatures of 800 K. LEED data indicate azimuthal graphene alignment with the h-BN and Co(0001) lattices, with domain size similar to BN. The evidence of multilayer BN and graphene azimuthal alignment with the lattice of the Co(0001) substrate demonstrates that this procedure is suitable for scalable production of heterojunctions for spintronic applications. PMID:26940024

  2. Electrochemistry at Edge of Single Graphene Layer in a Nanopore

    PubMed Central

    Banerjee, Shouvik; Shim, Jiwook; Rivera, Jose; Jin, Xiaozhong; Estrada, David; Solovyeva, Vita; You, Xiuque; Pak, James; Pop, Eric; Aluru, Narayana; Bashir, Rashid

    2013-01-01

    We study the electrochemistry of single layer graphene edges using a nanopore-based structure consisting of stacked graphene and Al2O3 dielectric layers. Nanopores, with diameters ranging from 5 to 20 nm, are formed by an electron beam sculpting process on the stacked layers. This leads to unique edge structure which, along with the atomically thin nature of the embedded graphene electrode, demonstrates electrochemical current densities as high as 1.2 × 104 A/cm2. The graphene edge embedded structure offers a unique capability to study the electrochemical exchange at an individual graphene edge, isolated from the basal plane electrochemical activity. We also report ionic current modulation in the nanopore by biasing the embedded graphene terminal with respect to the electrodes in the fluid. The high electrochemical specific current density for a graphene nanopore-based device can have many applications in sensitive chemical and biological sensing, and energy storage devices. PMID:23249127

  3. Intercalation of graphene on iridium with samarium atoms

    NASA Astrophysics Data System (ADS)

    Afanas'eva, E. Yu.; Rut'kov, E. V.; Gall, N. R.

    2016-07-01

    Intercalation of graphene on Ir (111) with Sm atoms is studied by methods of thermal desorption spectroscopy and thermionic emission. It is shown that adsorption of samarium at T = 300 K on graphene to concentrations of N ≤ 6 × 1014 atoms cm-2 followed by heating of the substrate leads to practically complete escape of adsorbate underneath the graphene layer. At N > 6 × 1014 atoms cm-2 and increasing temperature, a fraction of adsorbate remains on graphene in the form of two-dimensional "gas" and samarium islands and are desorbed in the range of temperatures of 1000-1200 K. Samarium remaining under the graphene is desorbed from the surface in the temperature range 1200-2150 K. Model conceptions for the samarium-graphene-iridium system in a wide temperature range are developed.

  4. Burning Graphene Layer-by-Layer

    PubMed Central

    Ermakov, Victor A.; Alaferdov, Andrei V.; Vaz, Alfredo R.; Perim, Eric; Autreto, Pedro A. S.; Paupitz, Ricardo; Galvao, Douglas S.; Moshkalev, Stanislav A.

    2015-01-01

    Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in “cold-wall” reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material. PMID:26100466

  5. Burning Graphene Layer-by-Layer.

    PubMed

    Ermakov, Victor A; Alaferdov, Andrei V; Vaz, Alfredo R; Perim, Eric; Autreto, Pedro A S; Paupitz, Ricardo; Galvao, Douglas S; Moshkalev, Stanislav A

    2015-01-01

    Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in "cold-wall" reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material. PMID:26100466

  6. Fe-catalyzed etching of graphene layers

    NASA Astrophysics Data System (ADS)

    Cheng, Guangjun; Calizo, Irene; Hight Walker, Angela; PML, NIST Team

    We investigate the Fe-catalyzed etching of graphene layers in forming gas. Fe thin films are deposited by sputtering onto mechanically exfoliated graphene, few-layer graphene (FLG), and graphite flakes on a Si/SiO2 substrate. When the sample is rapidly annealed in forming gas, particles are produced due to the dewetting of the Fe thin film and those particles catalyze the etching of graphene layers. Monolayer graphene and FLG regions are severely damaged and that the particles catalytically etch channels in graphite. No etching is observed on graphite for the Fe thin film annealed in nitrogen. The critical role of hydrogen indicates that this graphite etching process is catalyzed by Fe particles through the carbon hydrogenation reaction. By comparing with the etched monolayer and FLG observed for the Fe film annealed in nitrogen, our Raman spectroscopy measurements identify that, in forming gas, the catalytic etching of monolayer and FLG is through carbon hydrogenation. During this process, Fe particles are catalytically active in the dissociation of hydrogen into hydrogen atoms and in the production of hydrogenated amorphous carbon through hydrogen spillover.

  7. Detection of gas atoms via vibration of graphenes

    NASA Astrophysics Data System (ADS)

    Arash, Behrouz; Wang, Quan; Duan, Wen Hui

    2011-06-01

    The application of single-layered graphene sheets as mass sensors in detection of noble gases via a vibration analysis of graphenes is investigated using molecular dynamics simulations. An index based on frequency shifts of the graphenes attached by the distinct noble gas atoms is defined and examined to measure the sensitivity of the sensors. The dependence of number and location of gas atoms, size of graphene sheets, and type of restrained boundary of the sheets on the sensitivity is particularly studied. The simulation results indicate the resolution of a mass sensor made of a square graphene sheet with a size of 10 nm can achieve an order of 10 femtograms and the mass sensitivity can be enhanced with a decrease in sizes of graphenes.

  8. Nano-soldering to single atomic layer

    DOEpatents

    Girit, Caglar O.; Zettl, Alexander K.

    2011-10-11

    A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

  9. Determination of graphene layer thickness using optical image processing

    NASA Astrophysics Data System (ADS)

    Cook, Monica; Mani, R. G.

    2015-03-01

    Graphene, a single atomic layer of carbon arranged in a hexagonal lattice structure, is a valuable material in a wide range of research. A significant impediment to graphene research is the need to manually characterize the thickness of high-quality graphene produced via mechanical exfoliation. Traditional methods of characterizing the layer thickness of graphene, including Raman spectroscopy and atomic force microscopy, require expensive equipment and can be damaging to the graphene sample. We examine here a known alternative method for quantitatively determining the layer thickness of graphene on SiO2/Si based on optical image processing, which is quick, inexpensive, and non-invasive. Using RGB images of a candidate graphene sample and a background image, taken with a simple optical microscope and charge-coupled device (CCD) camera, we process the images with an algorithm based on Fresnel's law to obtain the contrast spectrum. Each layer of graphene exhibits a unique contrast spectrum for its particular substrate, which is measured and used for accurate layer identification. We also discuss how this algorithm can be generalized to characterize the thickness of other promising two-dimensional materials as well as more complex structures on a variety of substrates.

  10. EDITORIAL: Atomic layer deposition Atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Godlewski, Marek

    2012-07-01

    The growth method of atomic layer deposition (ALD) was introduced in Finland by Suntola under the name of atomic layer epitaxy (ALE). The method was originally used for deposition of thin films of sulphides (ZnS, CaS, SrS) activated with manganese or rare-earth ions. Such films were grown for applications in thin-film electroluminescence (TFEL) displays. The ALE mode of growth was also tested in the case of molecular beam epitaxy. Films grown by ALD are commonly polycrystalline or even amorphous. Thus, the name ALE has been replaced by ALD. In the 80s ALD was developed mostly in Finland and neighboring Baltic countries. Deposition of a range of different materials was demonstrated at that time, including II-VI semiconductors (e.g. CdTe, CdS) and III-V (e.g. GaAs, GaN), with possible applications in e.g. photovoltaics. The number of publications on ALD was slowly increasing, approaching about 100 each year. A real boom in interest came with the development of deposition methods of thin films of high-k dielectrics. This research was motivated by a high leakage current in field-effect transistors with SiO2-based gate dielectrics. In 2007 Intel introduced a new generation of integrated circuits (ICs) with thin films of HfO2 used as gate isolating layers. In these and subsequent ICs, films of HfO2 are deposited by the ALD method. This is due to their unique properties. The introduction of ALD to the electronics industry led to a booming interest in the ALD growth method, with the number of publications increasing rapidly to well above 1000 each year. A number of new applications were proposed, as reflected in this special issue of Semiconductor Science and Technology. The included articles cover a wide range of possible applications—in microelectronics, transparent electronics, optoelectronics, photovoltaics and spintronics. Research papers and reviews on the basics of ALD growth are also included, reflecting a growing interest in precursor chemistry and growth

  11. Remote catalyzation for direct formation of graphene layers on oxides.

    PubMed

    Teng, Po-Yuan; Lu, Chun-Chieh; Akiyama-Hasegawa, Kotone; Lin, Yung-Chang; Yeh, Chao-Hui; Suenaga, Kazu; Chiu, Po-Wen

    2012-03-14

    Direct deposition of high-quality graphene layers on insulating substrates such as SiO(2) paves the way toward the development of graphene-based high-speed electronics. Here, we describe a novel growth technique that enables the direct deposition of graphene layers on SiO(2) with crystalline quality potentially comparable to graphene grown on Cu foils using chemical vapor deposition (CVD). Rather than using Cu foils as substrates, our approach uses them to provide subliming Cu atoms in the CVD process. The prime feature of the proposed technique is remote catalyzation using floating Cu and H atoms for the decomposition of hydrocarbons. This allows for the direct graphitization of carbon radicals on oxide surfaces, forming isolated low-defect graphene layers without the need for postgrowth etching or evaporation of the metal catalyst. The defect density of the resulting graphene layers can be significantly reduced by tuning growth parameters such as the gas ratios, Cu surface areas, and substrate-to-Cu distance. Under optimized conditions, graphene layers with nondiscernible Raman D peaks can be obtained when predeposited graphite flakes are used as seeds for extended growth. PMID:22332771

  12. Organic doping of rotated double layer graphene

    NASA Astrophysics Data System (ADS)

    George, Lijin; Jaiswal, Manu

    2016-05-01

    Charge transfer techniques have been extensively used as knobs to tune electronic properties of two- dimensional systems, such as, for the modulation of conductivity mobility of single layer graphene and for opening the bandgap in bilayer graphene. The charge injected into the graphene layer shifts the Fermi level away from the minimum density of states point (Dirac point). In this work, we study charge transfer in rotated double-layer graphene achieved by the use of organic dopant, Tetracyanoquinodimethane. Naturally occurring bilayer graphene has a well-defined A-B stacking whereas in rotated double-layer the two graphene layers are randomly stacked with different rotational angles. This rotation is expected to significantly alter the interlayer interaction. Double-layer samples are prepared using layer-by-layer assembly of chemical vapor deposited single-layer graphene and they are identified by characteristic resonance in the Raman spectrum. The charge transfer and distribution of charges between the two graphene layers is studied using Raman spectroscopy and the results are compared with that for single-layer and A-B stacked bilayer graphene doped under identical conditions.

  13. Trapping Image State Electrons on Graphene Layers and Islands

    NASA Astrophysics Data System (ADS)

    Dadap, Jerry; Niesner, Daniel; Fauster, Thomas; Zaki, Nader; Knox, Kevin; Yeh, Po-Chi; Bhandari, Rohan; Osgood, Richard M.; Petrovic, Marin; Kralj, Marko

    2012-02-01

    The understanding of graphene-metal interfaces is of utmost importance in graphene transport phenomena. To probe this interface we use time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and the smooth, epitaxial graphene permits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrate to graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of mid-gap clean metal surfaces. Evidence of localization of the excited image-state electrons on single-atom-layer graphene islands is provided by coverage-dependent measurements.

  14. Tuning frictions between graphene layers via Li ion intercalation

    NASA Astrophysics Data System (ADS)

    Lu, Aijiang; Wan, Jiayu; Li, Teng; Hu, Liangbing; Univerisyt of Maryland, College Park Team

    Graphite intercalated with Li ions are widely studied and applied in Li ion batteries. It was revealed in experiments that, the Li ion intercalation leads to a phase transition of the graphite with about 10% volume expansion. The increased interlayer distance should contribute to decrease the frictions between the grahene layers, but the Li ion intercalation would take an opposite effect. In order to show the total effect of the Li ion interalation, we studied the frictions between graphene layers with and without lithiation, based on density functional theory (DFT). In a sandwich-like model, slipping of the middle sheet of the graphene was simulated. Displacements between layers were fixed and the other parts were relaxed, thus the energies were record to estimate the energy barriers accordingly. We found that the frictions between the graphene layers with the Li ion intercalation are higher than those without intercalation. The energy barrier appears correlated with the concentration of the intercalated ions. As the atomic ratio between lithium and carbon increases from 0 (no intercalation) to 1:6, the energy barriers increase from 0.01 eV/atom to 0.05 eV/atom or so. Such an interesting result indicates that, just via ion intercalation, we can effectively tune the friction between graphene layers. Tuning frictions between graphene layers via Li ion intercalation.

  15. Graphene as an anti-corrosion coating layer.

    PubMed

    Kyhl, Line; Nielsen, Sune Fuglsang; Čabo, Antonija Grubišić; Cassidy, Andrew; Miwa, Jill A; Hornekær, Liv

    2015-01-01

    Graphene, a single layer of carbon atoms arranged in an aromatic hexagonal lattice, has recently drawn attention as a potential coating material due to its impermeability, thermodynamic stability, transparency and flexibility. Here, the effectiveness of a model system, a graphene covered Pt(100) surface, for studying the anti-corrosion properties of graphene, has been evaluated. Chemical vapour deposition techniques were used to cover the single crystal surface with a complete layer of high-quality graphene and the surface was characterised after exposure to corrosive environments with scanning tunnelling microscopy (STM) and Raman spectroscopy. Graphene covered Pt samples were exposed to: (i) ambient atmosphere for 6 months at room temperature and 60 °C for 75 min, (ii) Milli-Q water for 14 hours at room temperature and 60 °C for 75 min, and (iii) saltwater (0.513 M NaCl) for 75 min at room temperature and 60 °C. STM provides atomic resolution images, which show that the graphene layer and the underlying surface reconstruction on the Pt(100) surface remain intact over the majority of the surface under all conditions, except exposure to saltwater when the sample is kept at 60 °C. Raman spectroscopy shows a broadening of all graphene related peaks due to hybridisation between the surface Pt d-orbitals and the graphene π-bands. This hybridisation also survives exposure to all environments except saltwater on the hot surface, with the latter leading to peaks more representative of a quasi free-standing graphene layer. A mechanism explaining the corrosive effect of hot saltwater is suggested. Based on these experiments, graphene is proposed to offer protection against corrosion in all tested environments, except saltwater on a hot surface, and Raman spectroscopy is proposed as a useful method for indirectly assessing the chemical state of the Pt surface. PMID:25915827

  16. The edge- and basal-plane-specific electrochemistry of a single-layer graphene sheet

    PubMed Central

    Yuan, Wenjing; Zhou, Yu; Li, Yingru; Li, Chun; Peng, Hailin; Zhang, Jin; Liu, Zhongfan; Dai, Liming; Shi, Gaoquan

    2013-01-01

    Graphene has a unique atom-thick two-dimensional structure and excellent properties, making it attractive for a variety of electrochemical applications, including electrosynthesis, electrochemical sensors or electrocatalysis, and energy conversion and storage. However, the electrochemistry of single-layer graphene has not yet been well understood, possibly due to the technical difficulties in handling individual graphene sheet. Here, we report the electrochemical behavior at single-layer graphene-based electrodes, comparing the basal plane of graphene to its edge. The graphene edge showed 4 orders of magnitude higher specific capacitance, much faster electron transfer rate and stronger electrocatalytic activity than those of graphene basal plane. A convergent diffusion effect was observed at the sub-nanometer thick graphene edge-electrode to accelerate the electrochemical reactions. Coupling with the high conductivity of a high-quality graphene basal plane, graphene edge is an ideal electrode for electrocatalysis and for the storage of capacitive charges. PMID:23896697

  17. Cleaning graphene with a titanium sacrificial layer

    SciTech Connect

    Joiner, C. A. Roy, T.; Hesabi, Z. R.; Vogel, E. M.; Chakrabarti, B.

    2014-06-02

    Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be difficult to remove. An approach to cleaning residues from the graphene channel is presented in which a thin layer of titanium is deposited via thermal e-beam evaporation and immediately removed. This procedure does not damage the graphene as evidenced by Raman spectroscopy, greatly enhances the electrical performance of the fabricated graphene field effect transistors, and completely removes the chemical residues from the surface of the graphene channel as evidenced by x-ray photoelectron spectroscopy.

  18. Single-layer behavior and its breakdown in twisted graphene layers

    NASA Astrophysics Data System (ADS)

    Luican-Mayer, Adina

    2013-03-01

    Stacking order plays a major role in the electronic properties of graphene layers because hopping between carbon atoms in neighboring layers is a key ingredient in their band structure. Twisting the layers away from the equilibrium Bernal stacking, which produces the superstructures known as Moiré patterns in scanning tunneling microscopy, decreases the overlap between atoms in adjacent layers and therefore significantly alters their electronic properties. Using scanning tunneling microscopy and spectroscopy, we obtained direct evidence for the electronic structure of twisted graphene layers.[2] The samples were membranes of CVD grown graphene and graphite crystals which contain areas with various twist angles. In topographic images the regions where layers are twisted away from Bernal stacking exhibit Moiré patterns with periods which depend on the twist angle. We find that the density of states on the twisted layers develops two Van Hove singularities that symmetrically flank the Dirac point at an energy that depends on the twist angle. High magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers reveal that for twist angles exceeding ~3 degrees the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20 degrees the layers effectively decouple and the electronic properties are indistinguishable from those in single-layer graphene, while for smaller angles we observe a slowdown of the carrier velocity which is strongly angle dependent.[3] These results are compared with theoretical predictions. DOE-FG02-99ER45742, NSF DMR 1207108, Alcatel-Lucent

  19. Dimensional dependence of phonon transport in freestanding atomic layer systems

    NASA Astrophysics Data System (ADS)

    Kim, Duckjong; Hwangbo, Yun; Zhu, Lijing; Mag-Isa, Alexander E.; Kim, Kwang-Seop; Kim, Jae-Hyun

    2013-11-01

    Due to the fast development of nanotechnology, we have the capability of manipulating atomic layer systems such as graphene, hexagonal boron nitride and dichalcogenides. The major concern in the 2-dimensional nanostructures is how to preserve their exceptional single-layer properties in 3-dimensional bulk structures. In this study, we report that the extreme phonon transport in graphene is highly affected by the graphitic layer stacking based on experimental investigation of the thermal conduction in few-layer graphene, 1-7 layers thick, suspended over holes of various diameters. We fabricate freestanding axisymmetric graphene structures without any perturbing substrate, and measure the in-plane transport property in terms of thermal conduction by using Raman spectroscopy. From the difference in susceptibility to substrate effect, size effect on hot-spot temperature variation and layer number dependence of thermal conductivity, we show that the graphitic membranes with 2 or more layers have characteristics similar to 3-dimensional graphite, which are very different from those of 2-dimensional graphene membranes. This implies that the scattering of out-of-plane phonons by interlayer atomic coupling could be a key mechanism governing the intrinsic thermal property.Due to the fast development of nanotechnology, we have the capability of manipulating atomic layer systems such as graphene, hexagonal boron nitride and dichalcogenides. The major concern in the 2-dimensional nanostructures is how to preserve their exceptional single-layer properties in 3-dimensional bulk structures. In this study, we report that the extreme phonon transport in graphene is highly affected by the graphitic layer stacking based on experimental investigation of the thermal conduction in few-layer graphene, 1-7 layers thick, suspended over holes of various diameters. We fabricate freestanding axisymmetric graphene structures without any perturbing substrate, and measure the in-plane transport

  20. Atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Goodman, Colin H. L.; Pessa, Markus V.

    1986-08-01

    Atomic layer epitaxy (ALE) is not so much a new technique for the preparation of thin films as a novel modification to existing methods of vapor-phase epitaxy, whether physical [e.g., evaporation, at one limit molecular-beam epitaxy (MBE)] or chemical [e.g., chloride epitaxy or metalorganic chemical vapor deposition (MOCVD)]. It is a self-regulatory process which, in its simplest form, produces one complete molecular layer of a compound per operational cycle, with a greater thickness being obtained by repeated cycling. There is no growth rate in ALE as in other crystal growth processes. So far ALE has been applied to rather few materials, but, in principle, it could have a quite general application. It has been used to prepare single-crystal overlayers of CdTe, (Cd,Mn)Te, GaAs and AlAs, a number of polycrystalline films and highly efficient electroluminescent thin-film displays based on ZnS:Mn. It could also offer particular advantages for the preparation of ultrathin films of precisely controlled thickness in the nanometer range and thus may have a special value for growing low-dimensional structures.

  1. Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface

    SciTech Connect

    Yagyu, Kazuma; Tochihara, Hiroshi; Tomokage, Hajime; Suzuki, Takayuki; Tajiri, Takayuki; Kohno, Atsushi; Takahashi, Kazutoshi

    2014-02-03

    Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600 °C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moiré pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the K{sup ¯} point as well as a characteristic peak in a C{sub 1s} core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped.

  2. Counting graphene layers with very slow electrons

    NASA Astrophysics Data System (ADS)

    Frank, Luděk; Mikmeková, Eliška; Müllerová, Ilona; Lejeune, Michaël

    2015-01-01

    The study aimed at collection of data regarding the transmissivity of freestanding graphene for electrons across their full energy scale down to the lowest energies. Here, we show that the electron transmissivity of graphene drops with the decreasing energy of the electrons and remains below 10% for energies below 30 eV, and that the slow electron transmissivity value is suitable for reliable determination of the number of graphene layers. Moreover, electrons incident below 50 eV release adsorbed hydrocarbon molecules and effectively clean graphene in contrast to faster electrons that decompose these molecules and create carbonaceous contamination.

  3. Counting graphene layers with very slow electrons

    SciTech Connect

    Frank, Ludĕk; Mikmeková, Eliška; Müllerová, Ilona; Lejeune, Michaël

    2015-01-05

    The study aimed at collection of data regarding the transmissivity of freestanding graphene for electrons across their full energy scale down to the lowest energies. Here, we show that the electron transmissivity of graphene drops with the decreasing energy of the electrons and remains below 10% for energies below 30 eV, and that the slow electron transmissivity value is suitable for reliable determination of the number of graphene layers. Moreover, electrons incident below 50 eV release adsorbed hydrocarbon molecules and effectively clean graphene in contrast to faster electrons that decompose these molecules and create carbonaceous contamination.

  4. Near-field scanning microwave microscopy of few-layer graphene.

    SciTech Connect

    Kalugin, Nikolai G.; Gonzales, Edward; Kalichava, Irakli; Gin, Aaron V.; Wickey, Lee; Del Barga, Christopher; Talanov, Vladimir V.; Shaner, Eric Arthur

    2010-08-01

    Near-field microwave microscopy can be used as an alternative to atomic-force microscopy or Raman microscopy in determination of graphene thickness. We evaluated the values of AC impedance for few layer graphene. The impedance of mono and few-layer graphene at 4GHz was found predominantly active. Near-field microwave microscopy allows simultaneous imaging of location, geometry, thickness, and distribution of electrical properties of graphene without device fabrication. Our results may be useful for design of future graphene-based microwave devices.

  5. Recognizing nitrogen dopant atoms in graphene using atomic force microscopy

    NASA Astrophysics Data System (ADS)

    van der Heijden, Nadine J.; Smith, Daniël; Calogero, Gaetano; Koster, Rik S.; Vanmaekelbergh, Daniel; van Huis, Marijn A.; Swart, Ingmar

    2016-06-01

    Doping graphene by heteroatoms such as nitrogen presents an attractive route to control the position of the Fermi level in the material. We prepared N-doped graphene on Cu(111) and Ir(111) surfaces via chemical vapor deposition of two different molecules. Using scanning tunneling microscopy images as a benchmark, we show that the position of the dopant atoms can be determined using atomic force microscopy. Specifically, the frequency shift-distance curves Δ f (z ) acquired above a N atom are significantly different from the curves measured over a C atom. Similar behavior was found for N-doped graphene on Cu(111) and Ir(111). The results are corroborated by density functional theory calculations employing a van der Waals functional.

  6. Atomic resolution of nitrogen-doped graphene on Cu foils.

    PubMed

    Wang, Chundong; Schouteden, Koen; Wu, Qi-Hui; Li, Zhe; Jiang, Jianjun; Van Haesendonck, Chris

    2016-09-01

    Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene's electronic properties. PMID:27479275

  7. Trapping surface electrons on graphene layers and islands

    NASA Astrophysics Data System (ADS)

    Niesner, D.; Fauster, Th.; Dadap, J. I.; Zaki, N.; Knox, K. R.; Yeh, P.-C.; Bhandari, R.; Osgood, R. M.; Petrović, M.; Kralj, M.

    2012-02-01

    We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and graphene permits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrate to graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of midgap clean metal surfaces. Evidence of localization of the excited electrons on single-atom-layer graphene islands is provided by coverage-dependent measurements.

  8. Surface-confined single-layer covalent organic framework on single-layer graphene grown on copper foil.

    PubMed

    Xu, Lirong; Zhou, Xin; Tian, Wei Quan; Gao, Teng; Zhang, Yan Feng; Lei, Shengbin; Liu, Zhong Fan

    2014-09-01

    The integration of 2D covalent organic frameworks (COFs) with atomic thickness with graphene will lead to intriguing two-dimensional materials. A surface-confined covalently bonded Schiff base network was prepared on single-layer graphene grown on copper foil and the dynamic reaction process was investigated with scanning tunneling microscopy. DFT simulations provide an understanding of the electronic structures and the interactions between the surface COF and graphene. Strong coupling between the surface COF and graphene was confirmed by the dispersive bands of the surface COF after interaction with graphene, and also by the experimental observation of tunneling condition dependent contrast of the surface COF. PMID:25145927

  9. Atomically thin epitaxial template for organic crystal growth using graphene with controlled surface wettability.

    PubMed

    Nguyen, Nguyen Ngan; Jo, Sae Byeok; Lee, Seong Kyu; Sin, Dong Hun; Kang, Boseok; Kim, Hyun Ho; Lee, Hansol; Cho, Kilwon

    2015-04-01

    A two-dimensional epitaxial growth template for organic semiconductors was developed using a new method for transferring clean graphene sheets onto a substrate with controlled surface wettability. The introduction of a sacrificial graphene layer between a patterned polymeric supporting layer and a monolayer graphene sheet enabled the crack-free and residue-free transfer of free-standing monolayer graphene onto arbitrary substrates. The clean graphene template clearly induced the quasi-epitaxial growth of crystalline organic semiconductors with lying-down molecular orientation while maintaining the "wetting transparency", which allowed the transmission of the interaction between organic molecules and the underlying substrate. Consequently, the growth mode and corresponding morphology of the organic semiconductors on graphene templates exhibited distinctive dependence on the substrate hydrophobicity with clear transition from lateral to vertical growth mode on hydrophilic substrates, which originated from the high surface energy of the exposed crystallographic planes of the organic semiconductors on graphene. The optical properties of the pentacene layer, especially the diffusion of the exciton, also showed a strong dependency on the corresponding morphological evolution. Furthermore, the effect of pentacene-substrate interaction was systematically investigated by gradually increasing the number of graphene layers. These results suggested that the combination of a clean graphene surface and a suitable underlying substrate could serve as an atomically thin growth template to engineer the interaction between organic molecules and aromatic graphene network, thereby paving the way for effectively and conveniently tuning the semiconductor layer morphologies in devices prepared using graphene. PMID:25798655

  10. Selective growth of Pb islands on graphene/SiC buffer layers

    SciTech Connect

    Liu, X. T.; Miao, Y. P.; Ma, D. Y.; Hu, T. W.; Ma, F. E-mail: kwxu@mail.xjtu.edu.cn; Chu, Paul K.; Xu, K. W. E-mail: kwxu@mail.xjtu.edu.cn

    2015-02-14

    Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6√(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

  11. Inorganic nanostructures grown on graphene layers

    NASA Astrophysics Data System (ADS)

    Park, Won Il; Lee, Chul-Ho; Lee, Jung Min; Kim, Nam-Jung; Yi, Gyu-Chul

    2011-09-01

    This article presents a review of current research activities on the hybrid heterostructures of inorganic nanostructures grown directly on graphene layers, which can be categorized primarily as zero-dimensional nanoparticles; one-dimensional nanorods, nanowires, and nanotubes; and two-dimensional nanowalls. For the hybrid structures, the nanostructures exhibit excellent material characteristics including high carrier mobility and radiative recombination rate as well as long-term stability while graphene films show good optical transparency, mechanical flexibility, and electrical conductivity. Accordingly, the versatile and fascinating properties of the nanostructures grown on graphene layers make it possible to fabricate high-performance optoelectronic and electronic devices even in transferable, flexible, or stretchable forms. Here, we review preparation methods and possible device applications of the hybrid structures consisting of various types of inorganic nanostructures grown on graphene layers.

  12. Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

    PubMed Central

    Telychko, Mykola; Berger, Jan; Majzik, Zsolt; Jelínek, Pavel

    2015-01-01

    Summary We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms. PMID:25977861

  13. Protecting nickel with graphene spin-filtering membranes: A single layer is enough

    SciTech Connect

    Martin, M.-B.; Dlubak, B.; Piquemal-Banci, M.; Collin, S.; Petroff, F.; Anane, A.; Fert, A.; Seneor, P.; Yang, H.; Blume, R.; Schloegl, R.

    2015-07-06

    We report on the demonstration of ferromagnetic spin injectors for spintronics which are protected against oxidation through passivation by a single layer of graphene. The graphene monolayer is directly grown by catalytic chemical vapor deposition on pre-patterned nickel electrodes. X-ray photoelectron spectroscopy reveals that even with its monoatomic thickness, monolayer graphene still efficiently protects spin sources against oxidation in ambient air. The resulting single layer passivated electrodes are integrated into spin valves and demonstrated to act as spin polarizers. Strikingly, the atom-thick graphene layer is shown to be sufficient to induce a characteristic spin filtering effect evidenced through the sign reversal of the measured magnetoresistance.

  14. The Electronic Structure of Single-Layer Graphene

    NASA Astrophysics Data System (ADS)

    Siegel, David Alan

    Single-layer graphene has been widely researched in recent years due to its perceived technological applicability and its scientific importance as a unique model system with relativistic Dirac Fermions. Because of its unique geometric and electronic structure, the properties of graphene can be tuned or manipulated in several ways. This tunability is important for technological applications in its own right, and it also allows us to study the fundamental properties of Dirac Fermions, including unique many-body interactions and the nature of the quasiparticles at half-filling. This thesis is a detailed examination of the electronic and structural properties of graphene, studied with angle-resolved photoemission spectroscopy (ARPES) and other surface science techniques like low-energy electron microscopy and diffraction. This thesis is organized as follows. Chapter 1 gives an introduction to the electronic and structural properties of single-layer graphene. It provides a brief historical overview of major theoretical and experimental milestones and sets the stage for the important theoretical and experimental questions that this thesis addresses. Chapters 2 and 3 describe the experimental setup. Chapter 2 discusses the experimental techniques used in this thesis with particular focus on the mechanics of ARPES. Chapter 3 discusses the different graphene growth techniques that were used to create our sample with particular focus on our characterization of epitaxial graphene on SiC(0001). Chapters 4 and 5 form the meat of this thesis: they provide a thorough discussion of the electronic properties of graphene as studied by ARPES. Chapter 4 describes how various perturbations can result in the manipulation of the bare electronic band structure, including the deposition of atomic or molecular species on top of an epitaxial graphene sheet as well as the interactions between graphene and its substrate. Chapter 5 describes the many-body physics in single-layer graphene. It

  15. Excitonic Effects in Tungsten Disulfide Monolayers on Two-Layer Graphene.

    PubMed

    Giusca, Cristina E; Rungger, Ivan; Panchal, Vishal; Melios, Christos; Lin, Zhong; Lin, Yu-Chuan; Kahn, Ethan; Elías, Ana Laura; Robinson, Joshua A; Terrones, Mauricio; Kazakova, Olga

    2016-08-23

    Light emission in atomically thin heterostructures is known to depend on the type of materials and the number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulfide (WS2) on one- and two-layer epitaxial graphene, unravelling the effect that the interlayer electronic coupling has on the excitonic properties of such heterostructures. We bring evidence that the excitonic properties of WS2 can be effectively tuned by the number of supporting graphene layers. Integrating WS2 monolayers with two-layer graphene leads to a significant enhancement of the photoluminescence response, up to 1 order of magnitude higher compared to WS2 supported on one-layer graphene. Our findings highlight the importance of substrate engineering when constructing atomically thin-layered heterostructures. PMID:27434813

  16. Direct Growth Properties of Graphene Layers on Sapphire Substrate by Alcohol-Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Nakamura, Atsushi; Miyasaka, Yuta; Temmyo, Jiro

    2012-04-01

    Few nanometers thick graphene layers were directly grown on a-plane (11bar 20) sapphire substrates by alcohol-chemical vapor deposition (alcohol-CVD) using ethanol as a carbon source and without any catalytic metal on the substrate surface. The growth relationship between the graphene layer and substrate was analyzed using a transmission electron microscope (TEM). The growth rate of graphene layers with different growth temperatures revealed that the Al atom act as a catalyst for synthesizing a graphitic material during the decomposition of ethanol. An optical transmittance and a sheet resistance of the graphene sheet directly grown on sapphire substrate were observed. SiO2/Si and n-6H-SiC substrates were also examined for graphene direct growth to discuss the catalytic behavior of Si atoms compared with Al atoms.

  17. Electrical breakdown of graphene and few-layer graphene structures

    NASA Astrophysics Data System (ADS)

    Sundararajan, Abhishek; Hunley, D. Patrick; Strachan, Douglas. R.

    2012-02-01

    The electrical breakdown of graphene and few-layer graphene (FLG) structures are investigated. To better understand the dynamics of these nano-scale thermal effects, we investigate graphene and FLG structures of various dimensions and find that significant joule heating occurs inducing the structures to evolve. A distinct change in the behavior during electrical stressing indicates that different mechanisms and geometrical effects occur at the various stages of evolution. The results could have implications on the development of high current carrying nanoscale graphene devices. Supported in part by NSF Award No. DMR-0805136, the Kentucky NSF EPSCoR program through award EPS-0814194, and the University of Kentucky Center for Advanced Materials.

  18. Electrical breakdown of graphene and few-layer graphene structures

    NASA Astrophysics Data System (ADS)

    Sundararajan, Abhishek; Johnson, Stephen; Hunley, D. Patrick; Flores, Roel; Johnson, A. T. Charlie; Strachan, Douglas

    2011-03-01

    The electrical breakdown of graphene and few-layer graphene (FLG) structures are investigated. To better understand the dynamics of these nano-scale thermal effects, we investigate graphene and FLG nanowires of various dimensions and find that significant joule heating occurs inducing the structures to evolve. A distinct change in the behavior during electrical stressing indicates that different mechanisms occur at the various stages of evolution. The results are compared to detailed thermal modeling of our structures and could have implications on the development of high current carrying nanoscale graphene devices. Supported in part by NSF Award No. DMR-0805136, the Kentucky NSF EPSCoR program, the University of Kentucky Center for Advanced Materials, and the University of Kentucky Center for Nanoscale Science and Engineering.

  19. Atomic resolution of nitrogen-doped graphene on Cu foils

    NASA Astrophysics Data System (ADS)

    Wang, Chundong; Schouteden, Koen; Wu, Qi-Hui; Li, Zhe; Jiang, Jianjun; Van Haesendonck, Chris

    2016-09-01

    Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene’s electronic properties.

  20. Graphene mechanics: II. Atomic stress distribution during indentation until rupture.

    PubMed

    Costescu, Bogdan I; Gräter, Frauke

    2014-06-28

    Previous Atomic Force Microscopy (AFM) experiments found single layers of defect-free graphene to rupture at unexpectedly high loads in the micronewton range. Using molecular dynamics simulations, we modeled an AFM spherical tip pressing on a circular graphene sheet and studied the stress distribution during the indentation process until rupture. We found the graphene rupture force to have no dependency on the sheet size and a very weak dependency on the indenter velocity, allowing a direct comparison to experiment. The deformation showed a non-linear elastic behavior, with a two-dimensional elastic modulus in good agreement with previous experimental and computational studies. In line with theoretical predictions for linearly elastic sheets, rupture forces of non-linearly elastic graphene are proportional to the tip radius. However, as a deviation from the theory, the atomic stress concentrates under the indenter tip more strongly than predicted and causes a high probability of bond breaking only in this area. In turn, stress levels decrease rapidly towards the edge of the sheet, most of which thus only serves the role of mechanical support for the region under the indenter. As a consequence, the high ratio between graphene sheets and sphere radii, hitherto supposed to be necessary for reliable deformation and rupture studies, could be reduced to a factor of only 5-10 without affecting the outcome. Our study suggests time-resolved analysis of forces at the atomic level as a valuable tool to predict and interpret the nano-scale response of stressed materials beyond graphene. PMID:24834440

  1. Atomic Structure of Graphene Subnanometer Pores.

    PubMed

    Robertson, Alex W; Lee, Gun-Do; He, Kuang; Gong, Chuncheng; Chen, Qu; Yoon, Euijoon; Kirkland, Angus I; Warner, Jamie H

    2015-12-22

    The atomic structure of subnanometer pores in graphene, of interest due to graphene's potential as a desalination and gas filtration membrane, is demonstrated by atomic resolution aberration corrected transmission electron microscopy. High temperatures of 500 °C and over are used to prevent self-healing of the pores, permitting the successful imaging of open pore geometries consisting of between -4 to -13 atoms, all exhibiting subnanometer diameters. Picometer resolution bond length measurements are used to confirm reconstruction of five-membered ring projections that often decorate the pore perimeter, knowledge which is used to explore the viability of completely self-passivated subnanometer pore structures; bonding configurations where the pore would not require external passivation by, for example, hydrogen to be chemically inert. PMID:26524121

  2. Electronic Properties of Incommensurate Atomic Layers

    NASA Astrophysics Data System (ADS)

    Koshino, Mikito; Moon, Pilkyung

    2015-12-01

    We present a brief theoretical overview of electronic properties of incommensurate multilayer systems, i.e., a pair of two-dimensional atomic layers stacked in an arbitrary orientation. We introduce the general theoretical scheme to describe the interlayer interaction between incommensurate crystal structures, and apply the formula to two specific examples, the twisted bilayer graphene and graphene-hBN composite bilayer. In each case, we calculate the electronic band structure and demonstrate that the low-energy electronic properties are significantly modified by the interlayer interaction, particularly when the two lattice structures are close to each other. We also study the energy spectrum and the quantum Hall effect in magnetic fields, where we see that the spectral structure exhibits a fractal nature, as known as the Hofstadter butterfly. We argue about the optical absorption properties of the twisted bilayer graphene and show that the interlayer interaction gives rise to the characteristic spectroscopic features in zero magnetic field and also in strong magnetic field.

  3. Tunneling between two independently contacted graphene layers

    NASA Astrophysics Data System (ADS)

    Corbet, Christopher; Kim, Seyoung; Dillen, David C.; Fallah, Babak; Ramon, Michael; Tutuc, Emanuel; Banerjee, Sanjay

    2011-03-01

    We study the tunneling between two overlapped, independently contacted graphene monolayers. We use micromechanical exfoliation to deposit graphene monolayers on separate substrates. Using electron beam lithography (EBL) patterning and etching we isolate the two monolayers and remove the multilayer graphene in their close proximity. Once patterned, one monolayer was removed from the substrate and manually aligned to the other monolayer with an overlap region of a few square micrometers. EBL and metal deposition were used to define hall bars on the two separate monolayers. This design allows the extraction of each sheet's mobility and density using standard four-point resistance measurements. Using a finite element model, we calculate the current flow in each layer, as well as in between the two layers. The tunneling resistance is modeled as a contact resistance between the two graphene layers in this overlap region. We extract an upper limit for the specific tunneling resistance between the two graphene layers of 1.4E-4 Ohms*cm2 . We discuss the current density and potential dependence on the shape of the overlap region.

  4. Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers

    SciTech Connect

    Duong, Dinh Loc; Lee, Si Young; Kim, Seong Kyu; Lee, Young Hee

    2015-06-15

    We report graphene/ferroelectric/graphene hybrid structure to demonstrate an asymmetrical doping in two graphene layers, one side with electrons and another side with holes. Two ferroelectrics, a poly(vinylidenefluoride) (PVDF) and a hydrofluorinated graphene, were used to demonstrate the concept with density functional calculations, revealing the Fermi level shift of 0.35 and 0.75 eV, respectively. This concept was confirmed by Raman spectroscopy using graphene/poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE))/graphene hybrid, which can easily form β-phase close to our simulation model. G-band peak position was downshifted for electron doping and upshifted for hole doping. This hybrid structure opens an opportunity to study bilayer graphene system with a controllable thickness for a wide range of high carrier concentration.

  5. Periodic arrays of intercalated atoms in twisted bilayer graphene: An ab initio investigation

    NASA Astrophysics Data System (ADS)

    Miwa, R. H.; Venezuela, P.; Morell, Eric Suárez

    2015-09-01

    We have performed an ab initio investigation of transition metals (TMs =Mo ,Ru ,Co ,andPt ) embedded in twisted bilayer graphene (tBG) layers. Our total energy results reveal that, triggered by the misalignment between the graphene layers, Mo and Ru atoms may form a quasiperiodic (triangular) array of intercalated atoms. In contrast, the formation of those structures is not expected for the other TMs, the Co and Pt atoms. The net magnetic moment (m ) of Mo and Ru atoms may be quenched upon intercalation, depending on the stacking region (AA or AB). For instance, we find a magnetic moment of 0.3 μB(1.8 μB) for Ru atoms intercalated between the AA (AB) regions of the stacked twisted layers. Through simulated scanning tunneling microscopy (STM) images, we verify that the presence of intercalated TMs can be identified by the formation of bright (hexagonal) spots lying on the graphene surface.

  6. Quantum Sticking of Atomic Hydrogen to Graphene

    NASA Astrophysics Data System (ADS)

    Zhang, Yanting; Doherty, Adam; Geragotelis, Andrew; Clougherty, Dennis

    2013-03-01

    We consider the low-energy behavior of the sticking probability of atomic hydrogen to suspended graphene. For energy transfer through the flexural modes of graphene, we find that the inelastic coupling falls in the subOhmic regime. Thus the effects of low-frequency fluctuations of the graphene sheet are crucially important for quantum sticking. We analytically solve for the low-energy asymptotic behavior of the sticking coefficient using a variational mean-field method [D.P. Clougherty and Y. Zhang, Phys. Rev. Lett. 109, 120401 (2012)]. We find that as a result of strong coupling to the low-frequency flexural modes of graphene, a new scaling law results. For suspended graphene at finite temperature, we find that at a critical incident energy, the sticking probability drops discontinuously; below this critical energy, the sticking probability is suppressed by the orthogonality catastrophe. We compare our nonperturbative variational results to those obtained by using Fermi's golden rule. We gratefully acknowledge support by the National Science Foundation under DMR-1062966.

  7. Graphene-coated atomic force microscope tips for reliable nanoscale electrical characterization.

    PubMed

    Lanza, M; Bayerl, A; Gao, T; Porti, M; Nafria, M; Jing, G Y; Zhang, Y F; Liu, Z F; Duan, H L

    2013-03-13

    Graphene single-layer films are grown by chemical vapor deposition and transferred onto commercially available conductive tips for atomic force microscopy. Graphene-coated tips are much more resistant to both high currents and frictions than commercially available, metal-varnished, conductive atomic force microscopy tips, leading to much larger lifetimes and more reliable imaging due to a lower tip-sample interaction. PMID:23280635

  8. Determination of the stacking order of curved few-layered graphene systems

    NASA Astrophysics Data System (ADS)

    Hayashi, Takuya; MuramatsuCurrent Affiliation: Department Of Materials Science; Technology, Nagaoka University Of Technology, 1603-1, Kamitomioka, Nagaoka, 940-2188, Japan, Hiroyuki; ShimamotoCurrent Affiliation: Advanced Manufacturing Research Institute, Aist, 2266-98 Anagahora, Shimoshidami, Moriyama-Ku, Nagoya 463-8560, Japan, Daisuke; Fujisawa, Kazunori; Tojo, Tomohiro; Muramoto, Yoshitaka; Yokomae, Takuya; Asaoka, Toru; Kim, Yoong Ahm; Terrones, Mauricio; Endo, Morinobu

    2012-09-01

    We report a facile method to efficiently visualize the atomic carbon network of curved few-layered graphitic systems including folded bi-layer graphene, nanoribbon edges and multi-walled carbon nanotubes (straight and bent), via the processing of aberration-corrected high-resolution transmission electron microscopy (AC-HRTEM) images. This technique is also able to atomically resolve the structure of overlapping graphene layers with different orientations, thus enabling us to determine the stacking order of multiple graphene layers. To the best of our knowledge, we are the first to identify the stacking order of a misoriented 4-layer closed-edge graphene and a metal-semiconductor double-walled carbon nanotube junction.

  9. Graphene on Ni(111): Electronic Corrugation and Dynamics from Helium Atom Scattering

    PubMed Central

    2015-01-01

    Using helium atom scattering, we have studied the structure and dynamics of a graphene layer prepared in situ on a Ni(111) surface. Graphene/Ni(111) exhibits a helium reflectivity of ∼20% for a thermal helium atom beam and a particularly small surface electron density corrugation ((0.06 ± 0.02) Å peak to peak height). The Debye–Waller attenuation of the elastic diffraction peaks of graphene/Ni(111) and Ni(111) was measured at surface temperatures between 150 and 740 K. A surface Debye temperature of θD = (784 ± 14) K is determined for the graphene/Ni(111) system and θD = (388 ± 7) K for Ni(111), suggesting that the interlayer interaction between graphene and the Ni substrate is intermediary between those for strongly interacting systems like graphene/Ru(0001) and weakly interacting systems like graphene/Pt(111). In addition we present measurements of low frequency surface phonon modes on graphene/Ni(111) where the phonon modes of the Ni(111) substrate can be clearly observed. The similarity of these findings with the graphene/Ru(0001) system indicates that the bonding of graphene to a metal substrate alters the dynamic properties of the graphene surface strongly and is responsible for the high helium reflectivity of these systems. PMID:26617683

  10. Thermal conductivity of giant mono- to few-layered CVD graphene supported on an organic substrate.

    PubMed

    Liu, Jing; Wang, Tianyu; Xu, Shen; Yuan, Pengyu; Xu, Xu; Wang, Xinwei

    2016-05-21

    The thermal conductivity (k) of supported graphene is a critical property that reflects the graphene-substrate interaction, graphene structure quality, and is needed for thermal design of a graphene device. Yet the related k measurement has never been a trivial work and very few studies are reported to date, only at the μm level. In this work, for the first time, the k of giant chemical vapor decomposition (CVD) graphene supported on poly(methyl methacrylate) (PMMA) is characterized using our transient electro-thermal technique based on a differential concept. Our graphene size is ∼mm, far above the samples studied in the past. This giant graphene measurement eliminates the thermal contact resistance problems and edge phonon scattering encountered in μm-scale graphene k measurement. Such mm-scale measurement is critical for device/system-level thermal design since it reflects the effect of abundant grains in graphene. The k of 1.33-layered, 1.53-layered, 2.74-layered and 5.2-layered supported graphene is measured as 365 W m(-1) K(-1), 359 W m(-1) K(-1), 273 W m(-1) K(-1) and 33.5 W m(-1) K(-1), respectively. These values are significantly lower than the k of supported graphene on SiO2, and are about one order of magnitude lower than the k of suspended graphene. We speculate that the abundant C atoms in the PMMA promote more ready energy and momentum exchange with the supported graphene, and give rise to more phonon scattering than the SiO2 substrate. This leads to a lower k of CVD graphene on PMMA than that on SiO2. We attribute the existence of disorder in the sp(2) domain, graphene oxide (GO) and stratification in the 5.2-layered graphene to its more k reduction. The Raman linewidth (G peak) of the 5.2-layered graphene is also twice larger than that of the other three kinds of graphene, indicating the much more phonon scattering and shorter phonon lifetime in it. Also the electrical conductivity of the 5.2-layered graphene is about one-fifth of that for the

  11. Thermal conductivity of giant mono- to few-layered CVD graphene supported on an organic substrate

    NASA Astrophysics Data System (ADS)

    Liu, Jing; Wang, Tianyu; Xu, Shen; Yuan, Pengyu; Xu, Xu; Wang, Xinwei

    2016-05-01

    The thermal conductivity (k) of supported graphene is a critical property that reflects the graphene-substrate interaction, graphene structure quality, and is needed for thermal design of a graphene device. Yet the related k measurement has never been a trivial work and very few studies are reported to date, only at the μm level. In this work, for the first time, the k of giant chemical vapor decomposition (CVD) graphene supported on poly(methyl methacrylate) (PMMA) is characterized using our transient electro-thermal technique based on a differential concept. Our graphene size is ~mm, far above the samples studied in the past. This giant graphene measurement eliminates the thermal contact resistance problems and edge phonon scattering encountered in μm-scale graphene k measurement. Such mm-scale measurement is critical for device/system-level thermal design since it reflects the effect of abundant grains in graphene. The k of 1.33-layered, 1.53-layered, 2.74-layered and 5.2-layered supported graphene is measured as 365 W m-1 K-1, 359 W m-1 K-1, 273 W m-1 K-1 and 33.5 W m-1 K-1, respectively. These values are significantly lower than the k of supported graphene on SiO2, and are about one order of magnitude lower than the k of suspended graphene. We speculate that the abundant C atoms in the PMMA promote more ready energy and momentum exchange with the supported graphene, and give rise to more phonon scattering than the SiO2 substrate. This leads to a lower k of CVD graphene on PMMA than that on SiO2. We attribute the existence of disorder in the sp2 domain, graphene oxide (GO) and stratification in the 5.2-layered graphene to its more k reduction. The Raman linewidth (G peak) of the 5.2-layered graphene is also twice larger than that of the other three kinds of graphene, indicating the much more phonon scattering and shorter phonon lifetime in it. Also the electrical conductivity of the 5.2-layered graphene is about one-fifth of that for the other three. This

  12. Specific heat of twisted bilayer graphene: Engineering phonons by atomic plane rotations

    SciTech Connect

    Nika, Denis L.; Cocemasov, Alexandr I.; Balandin, Alexander A.

    2014-07-21

    We have studied the phonon specific heat in single-layer, bilayer, and twisted bilayer graphene. The calculations were performed using the Born-von Karman model of lattice dynamics for intralayer atomic interactions and spherically symmetric interatomic potential for interlayer interactions. We found that at temperature T < 15 K, specific heat varies with temperature as T{sup n}, where n = 1 for graphene, n = 1.6 for bilayer graphene, and n = 1.3 for the twisted bilayer graphene. The phonon specific heat reveals an intriguing dependence on the twist angle in bilayer graphene, which is particularly pronounced at low temperature. The results suggest a possibility of phonon engineering of thermal properties of layered materials by twisting the atomic planes.

  13. Bosonization approach for "atomic collapse" in graphene

    NASA Astrophysics Data System (ADS)

    Kagimura, Aya; Onogi, Tetsuya

    2016-02-01

    We study quantum electrodynamics with 2+1 dimensional massless Dirac fermion around a Coulomb impurity. Around a large charge with atomic number Z > 137, the QED vacuum is expected to collapse due to the strong Coulombic force. While the relativistic quantum mechanics fails to make reliable predictions for the fate of the vacuum, the heavy ion collision experiment also does not give clear understanding of this system. Recently, the "atomic collapse" resonances were observed on graphene where an artificial nuclei can be made. In this paper, we present our nonperturbative study of the vacuum structure of the quasiparticles in graphene with a charge impurity which contains multi-body effect using bosonization method.

  14. Selective exfoliation of single-layer graphene from non-uniform graphene grown on Cu

    NASA Astrophysics Data System (ADS)

    Lim, Jae-Young; Lee, Jae-Hyun; Jang, Hyeon-Sik; Joo, Won-Jae; Hwang, SungWoo; Whang, Dongmok

    2015-11-01

    Graphene growth on a copper surface via metal-catalyzed chemical vapor deposition has several advantages in terms of providing high-quality graphene with the potential for scale-up, but the product is usually inhomogeneous due to the inability to control the graphene layer growth. The non-uniform regions strongly affect the reliability of the graphene in practical electronic applications. Herein, we report a novel graphene transfer method that allows for the selective exfoliation of single-layer graphene from non-uniform graphene grown on a Cu foil. Differences in the interlayer bonding energy are exploited to mechanically separate only the top single-layer graphene and transfer this to an arbitrary substrate. The dry-transferred single-layer graphene showed electrical characteristics that were more uniform than those of graphene transferred using conventional wet-etching transfer steps.

  15. Raman Fingerprints of Atomically Precise Graphene Nanoribbons

    PubMed Central

    2016-01-01

    Bottom-up approaches allow the production of ultranarrow and atomically precise graphene nanoribbons (GNRs) with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab initio simulations, we show that GNR width, edge geometry, and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm–1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs and differentiates them from other sp2 carbon nanostructures. PMID:26907096

  16. Raman Fingerprints of Atomically Precise Graphene Nanoribbons

    NASA Astrophysics Data System (ADS)

    Verzhbitskiy, Ivan A.; Corato, Marzio De; Ruini, Alice; Molinari, Elisa; Narita, Akimitsu; Hu, Yunbin; Schwab, Matthias G.; Bruna, Matteo; Yoon, Duhee; Milana, Silvia; Feng, Xinliang; Müllen, Klaus; Ferrari, Andrea C.; Casiraghi, Cinzia; Prezzi, Deborah

    2016-06-01

    Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs, and differentiates them from other sp2 carbon nanostructures.

  17. Raman Fingerprints of Atomically Precise Graphene Nanoribbons.

    PubMed

    Verzhbitskiy, Ivan A; Corato, Marzio De; Ruini, Alice; Molinari, Elisa; Narita, Akimitsu; Hu, Yunbin; Schwab, Matthias G; Bruna, Matteo; Yoon, Duhee; Milana, Silvia; Feng, Xinliang; Müllen, Klaus; Ferrari, Andrea C; Casiraghi, Cinzia; Prezzi, Deborah

    2016-06-01

    Bottom-up approaches allow the production of ultranarrow and atomically precise graphene nanoribbons (GNRs) with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab initio simulations, we show that GNR width, edge geometry, and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm(-1) is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs and differentiates them from other sp(2) carbon nanostructures. PMID:26907096

  18. Layer resolved capacitive probing of graphene bilayers

    NASA Astrophysics Data System (ADS)

    Zibrov, Alexander; Parmentier, François; Li, Jia; Wang, Lei; Hunt, Benjamin; Dean, Cory; Hone, James; Taniguchi, Takashi; Watanabe, Kenji; Young, Andrea

    Compared to single layer graphene, graphene bilayers have an additional ``which-layer'' degree of freedom that can be controlled by an external electric field in a dual-gated device geometry. We describe capacitance measurements capable of directly probing this degree of freedom. By performing top gate, bottom gate, and penetration field capacitance measurements, we directly extract layer polarization of both Bernal and twisted bilayers. We will present measurements of hBN encapsulated bilayers at both zero and high magnetic field, focusing on the physics of the highly degenerate zero-energy Landau level in the high magnetic field limit where spin, valley, and layer degeneracy are all lifted by electronic interactions.

  19. Symmetry Breaking in Few Layer Graphene Films

    SciTech Connect

    Bostwick, A.; Ohta, T.; McChesney, J.L.; Emtsev, K.; Seyller,Th.; Horn, K.; Rotenberg, E.

    2007-05-25

    Recently, it was demonstrated that the quasiparticledynamics, the layer-dependent charge and potential, and the c-axisscreening coefficient could be extracted from measurements of thespectral function of few layer graphene films grown epitaxially on SiCusing angle-resolved photoemission spectroscopy (ARPES). In this articlewe review these findings, and present detailed methodology for extractingsuch parameters from ARPES. We also present detailed arguments againstthe possibility of an energy gap at the Dirac crossing ED.

  20. Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Guo, Hongwei; Liu, Yunlong; Xu, Yang; Meng, Nan; Wang, Hongtao; Hasan, Tawfique; Wang, Xinran; Luo, Jikui; Yu, Bin

    2014-09-01

    Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H2O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics.

  1. Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures.

    PubMed

    Guo, Hongwei; Liu, Yunlong; Xu, Yang; Meng, Nan; Wang, Hongtao; Hasan, Tawfique; Wang, Xinran; Luo, Jikui; Yu, Bin

    2014-09-01

    Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H2O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics. PMID:25116064

  2. Spectroscopic characterization of ion-irradiated multi-layer graphenes

    NASA Astrophysics Data System (ADS)

    Tsukagoshi, Akira; Honda, Shin-ichi; Osugi, Ryo; Okada, Hiraku; Niibe, Masahito; Terasawa, Mititaka; Hirase, Ryuji; Izumi, Hirokazu; Yoshioka, Hideki; Niwase, Keisuke; Taguchi, Eiji; Lee, Kuei-Yi; Oura, Masaki

    2013-11-01

    Low-energy Ar ions (0.5-2 keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS). By Raman spectroscopy, we observed two stages similar to the case of irradiated graphite, which should relate to the accumulations of vacancies and turbulence of the basal plane, respectively. XAS analysis indicated that the number of sp2-hybridized carbon (sp2-C) atoms decreased after ion irradiation. Angle-resolved XAS revealed that the orientation parameter (OP) decreased with increasing ion energy and fluence, reflecting the turbulence of the basal plane under irradiation. In situ XPS shows the oxidation of the irradiated multi-layer graphenes after air exposure.

  3. Few layer graphene based superlattices as efficient thermal insulators

    NASA Astrophysics Data System (ADS)

    Ni, Yuxiang; Chalopin, Yann; Volz, Sebastian

    2013-09-01

    While graphene and few layer graphene (FLG) are considered as having the highest thermal conductivity in their in-plane directions, our molecular dynamics (MD) simulations however show that those systems are also characterized by a superior thermal contact resistance, which could be largely tuned with the layer number when in contact with a silica substrate. Taking advantages of such a resistive interface, MD simulations show that SiO2/FLG superlattices have a thermal conductivity as low as 0.30 W/m K, exhibiting a promising prospect in nano-scale thermal insulation. These findings pave the way for an improved thermal management of nanoscale systems such as thermal barrier coatings and phase change memory materials with atomic-scale super-insulators.

  4. Growth of high quality GaN layer on carbon nanotube-graphene network structure as intermediate layer

    NASA Astrophysics Data System (ADS)

    Seo, Taeo Hoon; Park, Ah Hyun; Park, Sungchan; Kim, Myung Jong; Suh, Eun-Kyung

    2015-03-01

    In general, high-quality GaN layers are synthesized on low-temperature (LT) GaN buffer layer on a single crystal sapphire substrate. However, large differences in fundamental properties such as lattice constants and thermal expansion coefficients between GaN layer and sapphire substrate generate high density of threading dislocation (TD) that leads to deterioration of optical and structural properties. Graphene has been attracting much attention due to its excellent physical properties However, direct epitaxial growth of GaN film onto graphene layer on substrates is not easily accessible due to the lack of chemical reactivity on graphene which consisted of C-C bond of sp2 hexagonally arranged carbon atoms with no dangling bonds. In this work, an intermediate layer for the GaN growth on sapphire substrate was constructed by inserting carbon nanotubes and graphene hybrid structure (CGH) Optical and structural properties of GaN layer grown on CGH were compared with those of GaN layer directly grown on sapphire CNTs act as nucleation sites and play a crucial role in the growth of single crystal high-quality GaN on graphene layer. Also, graphene film acts as a mask for epitaxial lateral overgrowth of GaN layer, which can effectively reduce TD density. A grant from the Korea Institute of Science and Technology (KIST) institutional program.

  5. Tunneling spin injection into single layer graphene.

    PubMed

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene. PMID:21231003

  6. Large-area, freestanding, single-layer graphene-gold: a hybrid plasmonic nanostructure.

    PubMed

    Iyer, Ganjigunte R Swathi; Wang, Jian; Wells, Garth; Guruvenket, Srinivasan; Payne, Scott; Bradley, Michael; Borondics, Ferenc

    2014-06-24

    Graphene-based plasmonic devices have recently drawn great attention. However, practical limitations in fabrication and device architectures prevent studies from being carried out on the intrinsic properties of graphene and their change by plasmonic structures. The influence of a quasi-infinite object (i.e., the substrate) on graphene, being a single sheet of carbon atoms, and the plasmonic device is overwhelming. To address this and put the intrinsic properties of the graphene-plasmonic nanostructures in focus, we fabricate large-area, freestanding, single-layer graphene-gold (LFG-Au) sandwich structures and Au nanoparticle decorated graphene (formed via thermal treatment) hybrid plasmonic nanostructures. We observed two distinct plasmonic enhancement routes of graphene unique to each structure via surface-enhanced Raman spectroscopy. The localized electronic structure variation in the LFG due to graphene-Au interaction at the nanoscale is mapped using scanning transmission X-ray microscopy. The measurements show an optical density of ∼0.007, which is the smallest experimentally determined for single-layer graphene thus far. Our results on freestanding graphene-Au plasmonic structures provide great insight for the rational design and future fabrication of graphene plasmonic hybrid nanostructures. PMID:24860924

  7. Atomically precise nitrogen-doped graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Sinitskii, Alexander

    There is a considerable interest in graphene nanoribbons (GNRs), few-nm-wide strips of graphene with high aspect ratios, because of their intriguing physical properties. For example, GNRs with zigzag edges are predicted to exhibit low-dimensional magnetism, while GNRs with armchair edges can possess large energy band gaps, making them promising materials for future electronics and photovoltaics. The ability to control structural parameters of GNRs, such as their width, edge structure and termination, with atomic precision is the key for practical realization of these intriguing nanoscale properties. Physical properties of GNRs can also be modified by their doping with heteroatoms, such nitrogen, resulting in nitrogen-doped GNRs or N-GNRs. In this talk I will discuss several types of N-GNRs with different doping levels that have been synthesized and systematically studied by spectroscopic, microscopic and transport methods. Incorporation of nitrogen atoms in graphene lattice is shown to be an effective route to affect GNRs' band gap, doping level as well as aggregation behavior. The support from NSF CHE-1455330 is gratefully acknowledged.

  8. Graphene coated with controllable N-doped carbon layer by molecular layer deposition as electrode materials for supercapacitors

    NASA Astrophysics Data System (ADS)

    Chen, Yao; Gao, Zhe; Zhang, Bin; Zhao, Shichao; Qin, Yong

    2016-05-01

    In this work, graphene is coated with nitrogen-doped carbon layer, which is produced by a carbonization process of aromatic polyimide (PI) films deposited on the surfaces of graphene by molecular layer deposition (MLD). The utilization of MLD not only allows uniform coating of PI layers on the surfaces of pristine graphene without any surface treatment, but also enables homogenous dispersion of doped nitrogen atoms in the carbonized products. The as-prepared N-doped carbon layer coated graphene (NC-G) exhibited remarkable capacitance performance as electrode materials for supercapacitor, showing a high specific capacitance of 290.2 F g-1 at current density of 1 A g-1 in 6 M KOH aqueous electrolyte, meanwhile maintaining good rate performance and stable cycle capability. The NC-G synthesized by this way represents an alternative promising candidate as electrode material for supercapacitors.

  9. Selective exfoliation of single-layer graphene from non-uniform graphene grown on Cu.

    PubMed

    Lim, Jae-Young; Lee, Jae-Hyun; Jang, Hyeon-Sik; Joo, Won-Jae; Hwang, SungWoo; Whang, Dongmok

    2015-11-13

    Graphene growth on a copper surface via metal-catalyzed chemical vapor deposition has several advantages in terms of providing high-quality graphene with the potential for scale-up, but the product is usually inhomogeneous due to the inability to control the graphene layer growth. The non-uniform regions strongly affect the reliability of the graphene in practical electronic applications. Herein, we report a novel graphene transfer method that allows for the selective exfoliation of single-layer graphene from non-uniform graphene grown on a Cu foil. Differences in the interlayer bonding energy are exploited to mechanically separate only the top single-layer graphene and transfer this to an arbitrary substrate. The dry-transferred single-layer grapheme showed electrical characteristics that were more uniform than those of graphene transferred using conventional wet-etching transfer steps. PMID:26491038

  10. Investigation of humidity-dependent size control of local anodic oxidation on graphene by using atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Ko, Seoknam; Lee, Seong jun; Son, Maengho; Ahn, Doyeol; Lee, Seung-Woong

    2015-02-01

    We demonstrate nanoscale local anodic oxidation (LAO) patterning on few-layer graphene by using an atomic force microscope (AFM) at room temperature under a normal atmosphere. We focus on the humidity dependency of nanoscale oxidation of graphene. The relations between the oxidation size and the setting values of the AFM, such as the set point, tip speed, and the humidity, are observed. By changing these values, proper parameters were found to produce features with on-demand size. This technique provides an easy way for graphene oxide lithography without any chemical resists. We obtained oxidation sizes down to 50 nm with a 6-nm-high oxide barrier line by using a 0.1- μm/s tip scanning speed. We also obtained micrometer-sized symbols on a graphene flake. We attribute the bumps of oxidized graphene in the graphene layer to local anodic oxidation on graphenes surface and to an incorporation of oxygen ions into the graphene lattice.

  11. Direct Synthesis of Few-Layer Graphene on NaCl Crystals.

    PubMed

    Shi, Liurong; Chen, Ke; Du, Ran; Bachmatiuk, Alicja; Rümmeli, Mark Hermann; Priydarshi, Manish Kumar; Zhang, Yanfeng; Manivannan, Ayyakkannu; Liu, Zhongfan

    2015-12-16

    Chemical vapor deposition is used to synthesize few-layer graphene on micro crystalline sodium chloride (NaCl) powder. The water-soluble nature of NaCl makes it convenient to produce free standing graphene layers via a facile and low-cost approach. Unlike traditional metal-catalyzed or oxygen-aided growth, the micron-size NaCl crystal planes play an important role in the nucleation and growth of few-layer graphene. Moreover, the possibility of synthesizing cuboidal graphene is also demonstrated in the present approach for the first time. Raman spectroscopy, optical microscopy, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy are used to evaluate the quality and structure of the few-layer graphene along with cuboidal graphene obtained in this process. The few-layer graphene synthesized using the present method has an adsorption ability for anionic and cationic dye molecules in water. The present synthesis method may pave a facile way for manufacturing few-layer graphene on a large scale. PMID:26524105

  12. Electron diffraction studies on CVD grown bi-layered graphene

    NASA Astrophysics Data System (ADS)

    Lingam, Kiran; Karakaya, Mehmet; Podila, Ramakrishna; Quin, Haijun; Rao, Apparao; Dept. of Physics and Astronomy, Clemson University, Clemson, SC USA 29634. Team; Advanced Materials Research Laboratories, Clemson University, Anderson, SC USA 29625 Collaboration

    2013-03-01

    Graphene has generated enormous interest in the scientific community due to its peculiar properties like electron mobility, thermal conductivity etc. Several recent reports on exfoliated graphene emphasized the role of layer stacking on the electronic and optical properties of graphene in case of bi-layered and few layered graphene and several synthesis techniques like chemical vapor deposition (CVD) on Copper foils are employed to prepare graphene for applications at a large scale. However, a correlated study pertinent to the stacking order in CVD grown graphene is still unclear. In this work, using a combination of Raman spectroscopy and selected area electron diffraction analysis we analyzed the preferred misorientation angles in a CVD grown bi-layered graphene and also the role of Cu crystal facets on the graphene stacking order will be presented.

  13. Aqueous proton transfer across single-layer graphene

    PubMed Central

    Achtyl, Jennifer L.; Unocic, Raymond R.; Xu, Lijun; Cai, Yu; Raju, Muralikrishna; Zhang, Weiwei; Sacci, Robert L.; Vlassiouk, Ivan V.; Fulvio, Pasquale F.; Ganesh, Panchapakesan; Wesolowski, David J.; Dai, Sheng; van Duin, Adri C. T.; Neurock, Matthew; Geiger, Franz M.

    2015-01-01

    Proton transfer across single-layer graphene proceeds with large computed energy barriers and is therefore thought to be unfavourable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here we subject single-layer graphene supported on fused silica to cycles of high and low pH, and show that protons transfer reversibly from the aqueous phase through the graphene to the other side where they undergo acid–base chemistry with the silica hydroxyl groups. After ruling out diffusion through macroscopic pinholes, the protons are found to transfer through rare, naturally occurring atomic defects. Computer simulations reveal low energy barriers of 0.61–0.75 eV for aqueous proton transfer across hydroxyl-terminated atomic defects that participate in a Grotthuss-type relay, while pyrylium-like ether terminations shut down proton exchange. Unfavourable energy barriers to helium and hydrogen transfer indicate the process is selective for aqueous protons. PMID:25781149

  14. Aqueous proton transfer across single-layer graphene

    NASA Astrophysics Data System (ADS)

    Achtyl, Jennifer L.; Unocic, Raymond R.; Xu, Lijun; Cai, Yu; Raju, Muralikrishna; Zhang, Weiwei; Sacci, Robert L.; Vlassiouk, Ivan V.; Fulvio, Pasquale F.; Ganesh, Panchapakesan; Wesolowski, David J.; Dai, Sheng; van Duin, Adri C. T.; Neurock, Matthew; Geiger, Franz M.

    2015-03-01

    Proton transfer across single-layer graphene proceeds with large computed energy barriers and is therefore thought to be unfavourable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here we subject single-layer graphene supported on fused silica to cycles of high and low pH, and show that protons transfer reversibly from the aqueous phase through the graphene to the other side where they undergo acid-base chemistry with the silica hydroxyl groups. After ruling out diffusion through macroscopic pinholes, the protons are found to transfer through rare, naturally occurring atomic defects. Computer simulations reveal low energy barriers of 0.61-0.75 eV for aqueous proton transfer across hydroxyl-terminated atomic defects that participate in a Grotthuss-type relay, while pyrylium-like ether terminations shut down proton exchange. Unfavourable energy barriers to helium and hydrogen transfer indicate the process is selective for aqueous protons.

  15. Aqueous proton transfer across single-layer graphene

    DOE PAGESBeta

    Achtyl, Jennifer L.; Unocic, Raymond R.; Xu, Lijun; Cai, Yu; Raju, Muralikrishna; Zhang, Weiwei; Sacci, Robert L.; Vlassiouk, Ivan V.; Fulvio, Pasquale F.; Ganesh, Panchapakesan; et al

    2015-03-17

    Proton transfer across single-layer graphene proceeds with large computed energy barriers and is thought to be unfavourable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here we subject single-layer graphene supported on fused ​silica to cycles of high and low pH, and show that protons transfer reversibly from the aqueous phase through the graphene to the other side where they undergo acid–base chemistry with the silica hydroxyl groups. After ruling out diffusion through macroscopic pinholes, the protons are found to transfer through rare, naturally occurring atomic defects. Computer simulations reveal low energymore » barriers of 0.61–0.75 eV for aqueous proton transfer across hydroxyl-terminated atomic defects that participate in a Grotthuss-type relay, while ​pyrylium-like ether terminations shut down proton exchange. In conclusion, unfavourable energy barriers to helium and ​hydrogen transfer indicate the process is selective for aqueous protons.« less

  16. Aqueous proton transfer across single-layer graphene

    SciTech Connect

    Achtyl, Jennifer L.; Unocic, Raymond R.; Xu, Lijun; Cai, Yu; Raju, Muralikrishna; Zhang, Weiwei; Sacci, Robert L.; Vlassiouk, Ivan V.; Fulvio, Pasquale F.; Ganesh, Panchapakesan; Wesolowski, David J.; Dai, Sheng; van Duin, Adri C. T.; Neurock, Matthew; Geiger, Franz M.

    2015-03-17

    Proton transfer across single-layer graphene proceeds with large computed energy barriers and is thought to be unfavourable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here we subject single-layer graphene supported on fused ​silica to cycles of high and low pH, and show that protons transfer reversibly from the aqueous phase through the graphene to the other side where they undergo acid–base chemistry with the silica hydroxyl groups. After ruling out diffusion through macroscopic pinholes, the protons are found to transfer through rare, naturally occurring atomic defects. Computer simulations reveal low energy barriers of 0.61–0.75 eV for aqueous proton transfer across hydroxyl-terminated atomic defects that participate in a Grotthuss-type relay, while ​pyrylium-like ether terminations shut down proton exchange. In conclusion, unfavourable energy barriers to helium and ​hydrogen transfer indicate the process is selective for aqueous protons.

  17. Electronic structure of heavily doped graphene: The role of foreign atom states

    NASA Astrophysics Data System (ADS)

    Calandra, Matteo; Mauri, Francesco

    2007-10-01

    Using density functional theory calculations we investigate the electronic structure of graphene doped by deposition of foreign atoms. We demonstrate that, as the charge transfer to the graphene layer increases, the band structure of the pristine graphene sheet is substantially affected. This is particularly relevant when Ca atoms are deposed on graphene at CaC6 stoichiometry. Similarly to what happens in superconducting graphite intercalated compounds, a Ca band occurs at the Fermi level. Its hybridization with the C states generates a strong nonlinearity in one of the π* bands below the Fermi level, at energies comparable to the graphene E2g phonon frequency. This strong nonlinearity, and not many-body effects as previously proposed, explains the large and anisotropic values of the apparent electron-phonon coupling measured in angular resolved photoemission.

  18. Selective growth of graphene in layer-by-layer via chemical vapor deposition.

    PubMed

    Park, Jaehyun; An, Hyosub; Choi, Dong-Chul; Hussain, Sajjad; Song, Wooseok; An, Ki-Seok; Lee, Won-Jun; Lee, Naesung; Lee, Wan-Gyu; Jung, Jongwan

    2016-08-14

    Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (∼40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices. PMID:27436358

  19. Graphene growth at the interface between Ni catalyst layer and SiO2/Si substrate.

    PubMed

    Lee, Jeong-Hoon; Song, Kwan-Woo; Park, Min-Ho; Kim, Hyung-Kyu; Yang, Cheol-Woong

    2011-07-01

    Graphene was synthesized deliberately at the interface between Ni film and SiO2/Si substrate as well as on top surface of Ni film using chemical vapor deposition (CVD) which is suitable for large-scale and low-cost synthesis of graphene. The carbon atom injected at the top surface of Ni film can penetrate and reach to the Ni/SiO2 interface for the formation of graphene. Once we have the graphene in between Ni film and SiO2/Si substrate, the substrate spontaneously provides insulating SiO2 layer and we may easily get graphene/SiO2/Si structure simply by discarding Ni film. This growth of graphene at the interface can exclude graphene transfer step for electronic application. Raman spectroscopy and optical microscopy show that graphene was successfully synthesized at the back of Ni film and the coverage of graphene varies with temperature and time of synthesis. The coverage of graphene at the interface depends on the amount of carbon atoms diffused into the back of Ni film. PMID:22121737

  20. Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

    SciTech Connect

    Wang, Gang; Zhang, Miao; Liu, Su; Xie, Xiaoming; Ding, Guqiao; Wang, Yongqiang; Chu, Paul K.; Gao, Heng; Ren, Wei; Yuan, Qinghong; Zhang, Peihong; Wang, Xi; Di, Zengfeng

    2015-05-04

    Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substrate surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.

  1. Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

    DOE PAGESBeta

    Wang, Gang; Zhang, Miao; Liu, Su; Xie, Xiaoming; Ding, Guqiao; Wang, Yongqiang; Chu, Paul K.; Gao, Heng; Ren, Wei; Yuan, Qinghong; et al

    2015-05-04

    Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substratemore » surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.« less

  2. Fabricating Large-Area Sheets of Single-Layer Graphene by CVD

    NASA Technical Reports Server (NTRS)

    Bronikowski, Michael; Manohara, Harish

    2008-01-01

    This innovation consists of a set of methodologies for preparing large area (greater than 1 cm(exp 2)) domains of single-atomic-layer graphite, also called graphene, in single (two-dimensional) crystal form. To fabricate a single graphene layer using chemical vapor deposition (CVD), the process begins with an atomically flat surface of an appropriate substrate and an appropriate precursor molecule containing carbon atoms attached to substituent atoms or groups. These molecules will be brought into contact with the substrate surface by being flowed over, or sprayed onto, the substrate, under CVD conditions of low pressure and elevated temperature. Upon contact with the surface, the precursor molecules will decompose. The substituent groups detach from the carbon atoms and form gas-phase species, leaving the unfunctionalized carbon atoms attached to the substrate surface. These carbon atoms will diffuse upon this surface and encounter and bond to other carbon atoms. If conditions are chosen carefully, the surface carbon atoms will arrange to form the lowest energy single-layer structure available, which is the graphene lattice that is sought. Another method for creating the graphene lattice includes metal-catalyzed CVD, in which the decomposition of the precursor molecules is initiated by the catalytic action of a catalytic metal upon the substrate surface. Another type of metal-catalyzed CVD has the entire substrate composed of catalytic metal, or other material, either as a bulk crystal or as a think layer of catalyst deposited upon another surface. In this case, the precursor molecules decompose directly upon contact with the substrate, releasing their atoms and forming the graphene sheet. Atomic layer deposition (ALD) can also be used. In this method, a substrate surface at low temperature is covered with exactly one monolayer of precursor molecules (which may be of more than one type). This is heated up so that the precursor molecules decompose and form one

  3. Benchmarking the penetration-resistance efficiency of multilayer graphene sheets due to spacing the graphene layers

    NASA Astrophysics Data System (ADS)

    Sadeghzadeh, S.

    2016-07-01

    In this paper, the penetration-resistance efficiency of single-layer and multilayer graphene sheets has been investigated by means of the multiscale approach. The employed multiscale approach has been implemented by establishing a direct correlation between the finite element method and the molecular dynamics approach and validated by comparing its results with those of the existing experimental works. Since by using numerous techniques, a new class of graphene sheets can be fabricated in which the graphene layers are spaced farther apart (more than the usual distance between layers), this paper has concentrated on the optimal spacing between graphene layers with the goal of improving the impact properties of graphene sheets as important candidates for novel impact-resistant panels. For this purpose, the relative protection (protection with respect to weight) values of graphene sheets were obtained, and it was observed that the relative protection of a single-layer graphene sheet is about 3.64 times that of a 20-layer graphene sheet. This study also showed that a spaced multilayer graphene sheet, with its inter-layer distance being 20 times the usual spacing between ordinary graphene layers, has an impact resistance which is about 20 % higher than that of an ordinary 20-layer graphene sheet. The findings of this paper can be appropriately used in the design and fabrication of future-generation impact-resistant protective panels.

  4. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

    SciTech Connect

    Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki; Kalita, Golap

    2014-09-29

    Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

  5. The atomic configuration of graphene/vanadium carbide interfaces in vanadium carbide-encapsulating carbon nanocapsules.

    PubMed

    Yazaki, Gaku; Matsuura, Daisuke; Kizuka, Tokushi

    2014-03-01

    Carbon nanocapsules (CNCs) encapsulating vanadium carbide (VC) nanocrystals with a NaCI structure were synthesized by a gas-evaporation method using arc-discharge heating. The CNCs were observed by high-resolution transmission electron microscopy. The VC nanocrystals within the nanospaces of CNCs were truncated by low-index facets and were coated with several graphene layers, forming graphene/VC interfaces. The atomic configuration and interlayer spacings at the interfaces were found. PMID:24745251

  6. Optical and Electrical Characteristics of Graphene Double Layer Formed by a Double Transfer of Graphene Single Layers.

    PubMed

    Kim, Young Jun; Bae, Gi Yoon; Chun, Sungwoo; Park, Wanjun

    2016-03-01

    We demonstrate formation of double layer graphene by means of a double transfer using two single graphene layers grown by a chemical vapor deposition method. It is observed that shiftiness and broadness in the double-resonance of Raman scattering are much weaker than those of bilayer graphene formed naturally. Transport characteristics examined from transmission line measurements and field effect transistors show the similar behavior with those of single layer graphene. It indicates that interlayer separation, in electrical view, is large enough to avoid correlation between layers for the double layer structure. It is also observed from a transistor with the double layer graphene that molecules adsorpted on two inner graphene surfaces in the double layered structure are isolated and conserved from ambient environment. PMID:27455706

  7. Synthesis of few layer graphene by direct exfoliation of graphite and a Raman spectroscopic study

    SciTech Connect

    Gayathri, S.; Jayabal, P.; Ramakrishnan, V.; Kottaisamy, M.

    2014-02-15

    The exfoliation of graphene from pristine graphite in a liquid phase was achieved successfully via sonication followed by centrifugation method. Ultraviolet–visible (UV–vis) spectra of the obtained graphene dispersions at different exfoliation time indicated that the concentration of graphene dispersion increased markedly with increasing exfoliation time. The sheet-like morphology of the exfoliated graphene was revealed by Scanning Electron Microscopy (SEM) image. Further, the morphological change in different exfoliation time was investigated by Atomic Force Microscopy (AFM). A complete structural and defect characterization was probed using micro-Raman spectroscopic technique. The shape and position of the 2D band of Raman spectra revealed the formation of bilayer to few layer graphene. Also, Raman mapping confirmed the presence of uniformly distributed bilayer graphene sheets on the substrate.

  8. Nanoelectronic circuits based on two-dimensional atomic layer crystals

    NASA Astrophysics Data System (ADS)

    Lee, Seunghyun; Zhong, Zhaohui

    2014-10-01

    Since the discovery of graphene and related forms of two-dimensional (2D) atomic layer crystals, numerous studies have reported on the fundamental material aspects, such as the synthesis, the physical properties, and the electrical properties on the transistor level. With the advancement in large-area synthesis methods, system level integration to exploit the unique applications of these materials is close at hand. The main purpose of this review is to focus on the current progress and the prospect of circuits and systems based on 2D material that go beyond the single-transistor level studies. Both analog and digital circuits based on graphene and related 2D atomic layer crystals will be discussed.

  9. Improving the electrical properties of graphene layers by chemical doping

    NASA Astrophysics Data System (ADS)

    Farooq Khan, Muhammad; Zahir Iqbal, Muhammad; Waqas Iqbal, Muhammad; Eom, Jonghwa

    2014-10-01

    Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO3) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO3. The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics.

  10. Growth of bi- and tri-layered graphene on silicon carbide substrate via molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Min, Tjun Kit; Lim, Thong Leng; Yoon, Tiem Leong

    2015-04-01

    Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works.

  11. Growth of bi- and tri-layered graphene on silicon carbide substrate via molecular dynamics simulation

    SciTech Connect

    Min, Tjun Kit; Yoon, Tiem Leong; Lim, Thong Leng

    2015-04-24

    Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works.

  12. Twisted bi-layer graphene: microscopic rainbows.

    PubMed

    Campos-Delgado, J; Algara-Siller, G; Santos, C N; Kaiser, U; Raskin, J-P

    2013-10-11

    Blue, pink, and yellow colorations appear from twisted bi-layer graphene (tBLG) when transferred to a SiO2 /Si substrate (SiO2 = 100 nm-thick). Raman and electron microscope studies reveal that these colorations appear for twist angles in the 9-15° range. Optical contrast simulations confirm that the observed colorations are related to the angle-dependent electronic properties of tBLG combined with the reflection that results from the layered structure tBLG/100 nm-thick SiO2 /Si. PMID:23606323

  13. Electronic resonant tunneling on graphene superlattice heterostructures with a tunable graphene layer

    NASA Astrophysics Data System (ADS)

    Zhang, Shan; Cui, Liyong; Liu, Fen; Lu, Guang; Du, Lei; Liu, Yiping; Du, Guiqiang

    2016-05-01

    We have theoretically investigated the electronic resonant tunneling effect in graphene superlattice heterostructures, where a tunable graphene layer is inserted between two different superlattices. It is found that a complete tunneling state appears inside the enlarged forbidden gap of the heterostructure by changing the thickness of the inserted graphene layer and the transmittance of the tunneling state depends on the thickness of the inserted layer. Furthermore, the frequency of the tunneling state changes with the thickness of the inserted graphene layer but it always located in the little overlapped forbidden gap of two graphene superlattices. Therefore, both a perfect tunneling state and an ultrawide forbidden gap are realized in such heterostrutures. Since maximum probability densities of the perfect tunneling state are highly localized near the interface between the inserted graphene layer and one graphene superlattice, it can be named as an interface-like state. Such structures are important to fabricate high-Q narrowband electron wave filters.

  14. Single-layer graphene cathodes for organic photovoltaics

    SciTech Connect

    Cox, Marshall P.; Gorodetsky, Alon A.; Kim, Bumjung; Kim, Keun Soo; Jia, Zhang; Kim, Philip; Nuckolls, Colin; Kymissis, Ioannis

    2011-01-01

    A laminated single-layer graphene is demonstrated as a cathode for organic photovoltaicdevices. The measured properties indicate that graphene offers two potential advantages over conventional photovoltaic electrode materials; work function matching via contact doping, and increased power conversion efficiency due to transparency. These findings indicate that flexible, light-weight all carbon solar cells can be constructed using graphene as the cathode material.

  15. Surface doping of nitrogen atoms on graphene via molecular precursor

    SciTech Connect

    Hong, Guo; Wu, Qi-Hui; Ren, Jianguo; Xu, Tingting; Wang, Chundong; Zhang, Wenjun; Lee, Shuit-Tong

    2013-02-04

    Surface doping can be a powerful way to modify the electronic properties of graphene with the unique potential to retain the excellent pristine properties of graphene. Here, we report an atomic surface doping method for graphene via dissociation of adsorbed precursor molecules of tetrafluorotetracyanoquinodimethane (F{sub 4}-TCNQ) induced by hydrogen plasma treatment. Significantly, the location of the dopant N atoms can be pre-determined by the location and orientation of the F{sub 4}-TCNQ molecule precursor on graphene, leading in principle to site-selective doping. Furthermore, the molecular precursor is stable under ambient conditions, satisfying an important consideration for patterning processes.

  16. Transfer-free batch fabrication of single layer graphene transistors.

    PubMed

    Levendorf, Mark P; Ruiz-Vargas, Carlos S; Garg, Shivank; Park, Jiwoong

    2009-12-01

    Full integration of graphene into conventional device circuitry would require a reproducible large scale graphene synthesis that is compatible with conventional thin film technology. We report the synthesis of large scale single layer graphene directly onto an evaporated copper film. A novel fabrication method was used to directly pattern these graphene sheets into devices by simply removing the underlying copper film. Raman and conductance measurements show that the mechanical and electrical properties of our single layer graphene are uniform over a large area, ( Ferrari, A. C. et al. Phys. Rev. Lett. 2006, 97, 187401.) which leads to a high device yield and successful fabrication of ultra long (>0.5 mm) graphene channels. Our graphene based devices present excellent electrical properties including a promising carrier mobility of 700 cm(2)/V.s and current saturation characteristics similar to devices based on exfoliated graphene ( Meric, I.. et al. Nat Nanotechnol. 2008, 3, 654-659). PMID:19860406

  17. Characterization of few-layered graphene grown by carbon implantation

    SciTech Connect

    Lee, Kin Kiong; McCallum, Jeffrey C.; Jamieson, David N.

    2014-02-21

    Graphene is considered to be a very promising material for applications in nanotechnology. The properties of graphene are strongly dependent on defects that occur during growth and processing. These defects can be either detrimental or beneficial to device performance depending on defect type, location and device application. Here we present experimental results on formation of few-layered graphene by carbon ion implantation into nickel films and characteristics of graphene devices formed by graphene transfer and lithographic patterning. Micro-Raman spectroscopy was used to determine the number of graphene layers formed and identify defects arising from the device processing. The graphene films were cleaned by annealing in vacuum. Transport properties of cleaned graphene films were investigated by fabrication of back-gated field-effect transistors, which exhibited high hole and electron mobility of 1935 and 1905 cm2/Vs, respectively.

  18. Adsorption configurations of two nitrogen atoms on graphene

    SciTech Connect

    Rani, Babita; Jindal, V. K.; Dharamvir, Keya

    2014-04-24

    We present calculations for different possible configurations of two nitrogen adatoms on graphene using the code VASP, based on Density Functional Theory (DFT). Two N atoms adsorbed on the graphene sheet can share a bond in two ways. They take positions either just above two adjacent carbon atoms or they form a bridge across opposite bonds of a hexagon in the graphene sheet. Both these configurations result into structural distortion of the sheet. Another stable configuration involving two N atoms consists of an N{sub 2} molecule which is physisorbed at a distance 3.69 Å on the graphene sheet. Two N atoms can also be adsorbed on alternate bridge sites of neighbouring hexagons of graphene. This configuration again leads to distortion of the sheet in perpendicular direction.

  19. Water desalination using nanoporous single-layer graphene

    NASA Astrophysics Data System (ADS)

    Surwade, Sumedh P.; Smirnov, Sergei N.; Vlassiouk, Ivan V.; Unocic, Raymond R.; Veith, Gabriel M.; Dai, Sheng; Mahurin, Shannon M.

    2015-05-01

    By creating nanoscale pores in a layer of graphene, it could be used as an effective separation membrane due to its chemical and mechanical stability, its flexibility and, most importantly, its one-atom thickness. Theoretical studies have indicated that the performance of such membranes should be superior to state-of-the-art polymer-based filtration membranes, and experimental studies have recently begun to explore their potential. Here, we show that single-layer porous graphene can be used as a desalination membrane. Nanometre-sized pores are created in a graphene monolayer using an oxygen plasma etching process, which allows the size of the pores to be tuned. The resulting membranes exhibit a salt rejection rate of nearly 100% and rapid water transport. In particular, water fluxes of up to 106 g m-2 s-1 at 40 °C were measured using pressure difference as a driving force, while water fluxes measured using osmotic pressure as a driving force did not exceed 70 g m-2 s-1 atm-1.

  20. Water desalination using nanoporous single-layer graphene.

    PubMed

    Surwade, Sumedh P; Smirnov, Sergei N; Vlassiouk, Ivan V; Unocic, Raymond R; Veith, Gabriel M; Dai, Sheng; Mahurin, Shannon M

    2015-05-01

    By creating nanoscale pores in a layer of graphene, it could be used as an effective separation membrane due to its chemical and mechanical stability, its flexibility and, most importantly, its one-atom thickness. Theoretical studies have indicated that the performance of such membranes should be superior to state-of-the-art polymer-based filtration membranes, and experimental studies have recently begun to explore their potential. Here, we show that single-layer porous graphene can be used as a desalination membrane. Nanometre-sized pores are created in a graphene monolayer using an oxygen plasma etching process, which allows the size of the pores to be tuned. The resulting membranes exhibit a salt rejection rate of nearly 100% and rapid water transport. In particular, water fluxes of up to 10(6) g m(-2) s(-1) at 40 °C were measured using pressure difference as a driving force, while water fluxes measured using osmotic pressure as a driving force did not exceed 70 g m(-2) s(-1) atm(-1). PMID:25799521

  1. Electronic Band Engineering of Epitaxial Graphene by Atomic Intercalation

    NASA Astrophysics Data System (ADS)

    Jayasekera, Thushari; Sandin, Andreas; Xu, Shu; Wheeler, Virginia; Gaskill, D. K.; Rowe, J. E.; Kim, K. W.; Dougherty, Daniel B.; Buongiorno Nardelli, M.

    2012-02-01

    Using calculations from first principles, we have investigated possible ways of engineering the electronic band structure of epitaxial graphene on SiC. In particular, intercalation of different atomic species, such as Hydrogen, Fluorine, Sodium, Germanium, Carbon and Silicon is shown to modify and tune the interface electronic properties and band alignments. Our results suggest that intercalation in graphene is quite different from that in graphite, and could provide a fundamentally new way to achieve electronic control in graphene electronics.

  2. Graphene as an anti-permeation and protective layer for indium-free transparent electrodes

    NASA Astrophysics Data System (ADS)

    Chen, T. L.; Ghosh, D. S.; Formica, N.; Pruneri, V.

    2012-10-01

    We show that graphene can be used as a protective layer for transparent electrodes made of materials which would otherwise deteriorate when exposed to the environment. In particular, we investigate aluminum-doped zinc oxides and ultrathin copper films capped with a one-atom graphene layer in damp heat (95% relative humidity and 95 °C) and high temperature (up to 180 °C) conditions. The results clearly indicate that a graphene layer can strongly reduce degradation of the electrodes’ electrical, optical properties and surface morphology, thus preserving the functionality of the transparent electrodes. The proposed technique is particularly suitable for flexible optoelectronic devices thanks to the mechanical strength of graphene when subjected to bending.

  3. Detection of interlayer interaction in few-layer graphene

    NASA Astrophysics Data System (ADS)

    Wu, Zefei; Han, Yu; Lin, Jiangxiazi; Zhu, Wei; He, Mingquan; Xu, Shuigang; Chen, Xiaolong; Lu, Huanhuan; Ye, Weiguang; Han, Tianyi; Wu, Yingying; Long, Gen; Shen, Junying; Huang, Rui; Wang, Lin; He, Yuheng; Cai, Yuan; Lortz, Rolf; Su, Dangsheng; Wang, Ning

    2015-08-01

    Bernal-stacked few-layer graphene has been investigated by analyzing its Landau-level spectra through quantum capacitance measurements. We find that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. In trilayer graphene, the interlayer interaction parameters are generally similar to those of graphite. However, in tetralayer graphene, the hopping parameters of the two bulk layers are quite different from those of the two outer layers. This represents direct evidence of the surface relaxation phenomenon. Traditionally, the van der Waals interaction between the carbon layers is thought to be insignificant. However, we suggest that the interlayer interaction is an important factor in explaining the observed results, and the symmetry-breaking effects in graphene sublattice are not negligible.

  4. The optical conductivity in double and three layer graphene systems

    NASA Astrophysics Data System (ADS)

    Yang, C. H.; Chen, Y. Y.; Jiang, J. J.; Ao, Z. M.

    2016-02-01

    We investigate the longitudinal optical conductivity in few-layer monolayer graphene systems, which is different from the bilayer or trilayer graphene structures analytically and numerically. Here, few isolated parallel two-dimensional (2D) monolayer graphene are separated by a distance d with no interlayer tunneling, where the finite width thickness has to be taken into account. The carrier's energy structure and states for each layer are unaffected by the others. The carrier density in each layer is assumed to be tuned by the corresponding gate voltage. The optical conductivity depends on the electron density, the number of layer, and the broadening width at low temperature. However, analytical and numerical results show that the optical conductivity has little dependence on the distance between the adjacent layers. It is found that two intra- and inter-band transition channels for optical transition via absorption scattering in each layer can be observed. When the optical energy is larger than two times the kinetic energy at the Fermi energy, the optical conductivity is proportional to the layer numbers of monolayer graphene that can determine the number of the monolayer graphene layer. In sharp contrast to the bilayer or trilayer graphene systems, several turning points can be observed. Increasing the broadening width, the turning area becomes gradual. The main difference on the optical conductivity for double layer graphene and bilayer graphene is in the intermediate energy region where the threshold structure is observed.

  5. Controllable synthesis of graphene sheets with different numbers of layers and effect of the number of graphene layers on the specific capacity of anode material in lithium-ion batteries

    SciTech Connect

    Tong, Xin; Wang, Hui; Wang, Gang; Wan, Lijuan; Ren, Zhaoyu; Bai, Jintao; Bai, Jinbo

    2011-05-15

    High quality graphene sheets are synthesized through efficient oxidation process followed by rapid thermal expansion and reduction by H{sub 2}. The number of graphene layers is controlled by tuning the oxidation degree of GOs. The higher the oxidation degree of GOs is getting, the fewer the numbers of graphene layers can be obtained. The material is characterized by elemental analysis, thermo-gravimetric analysis, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and Fourier transform infrared spectroscopies. The obtained graphene sheets with single, triple and quintuplicate layers as anode materials exhibit a high reversible capacity of 1175, 1007, and 842 mA h g{sup -1}, respectively, which show that the graphene sheets with fewer layers have higher reversible capacity. -- Graphical abstract: The typical TEM images of the graphene sheets derived from GO3(a), GO2(b) and GO1(c). Display Omitted Highlights: {yields} With the oxidation degree of GO increasing, the numbers of graphene layers decreased. {yields} With the numbers of graphene layers decreasing, the reversible capacity improved. {yields} Graphene sheets with single-layer exhibit the best electrochemical performances.

  6. Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

    PubMed Central

    Richter, Nils; Convertino, Domenica; Coletti, Camilla; Balestro, Franck; Wernsdorfer, Wolfgang; Kläui, Mathias; Affronte, Marco

    2015-01-01

    Summary Graphene-based electrodes are very promising for molecular electronics and spintronics. Here we report a systematic characterization of the electroburning (EB) process, leading to the formation of nanometer-spaced gaps, on different types of few-layer graphene (namely mechanically exfoliated graphene on SiO2, graphene epitaxially grown on the C-face of SiC and turbostratic graphene discs deposited on SiO2) under air and vacuum conditions. The EB process is found to depend on both the graphene type and on the ambient conditions. For the mechanically exfoliated graphene, performing EB under vacuum leads to a higher yield of nanometer-gap formation than working in air. Conversely, for graphene on SiC the EB process is not successful under vacuum. Finally, the EB is possible with turbostratic graphene discs only after the creation of a constriction in the sample using lithographic patterning. PMID:25821711

  7. Controllable chemical vapor deposition growth of few layer graphene for electronic devices.

    PubMed

    Wei, Dacheng; Wu, Bin; Guo, Yunlong; Yu, Gui; Liu, Yunqi

    2013-01-15

    Because of its atomic thickness, excellent properties, and widespread applications, graphene is regarded as one of the most promising candidate materials for nanoelectronics. The wider use of graphene will require processes that produce this material in a controllable manner. In this Account, we focus on our recent studies of the controllable chemical vapor deposition (CVD) growth of graphene, especially few-layer graphene (FLG), and the applications of this material in electronic devices. CVD provides various means of control over the morphologies of the produced graph ene. We studied several variables that can affect the CVD growth of graphene, including the catalyst, gas flow rate, growth time, and growth temperature and successfully achieved the controlled growth of hexagonal graphene crystals. Moreover, we developed several modified CVD methods for the controlled growth of FLGs. Patterned CVD produced FLGs with desired shapes in required areas. By introducing dopant precursor in the CVD process, we produced substitutionally doped FLGs, avoiding the typically complicated post-treatment processes for graphene doping. We developed a template CVD method to produce FLG ribbons with controllable morphologies on a large scale. An oxidation-activated surface facilitated the CVD growth of polycrystalline graphene without the use of a metal catalyst or a complicated postgrowth transfer process. In devices, CVD offers a controllable means to modulate the electronic properties of the graphene samples and to improve device performance. Using CVD-grown hexagonal graphene crystals as the channel materials in field-effect transistors (FETs), we improved carrier mobility. Substitutional doping of graphene in CVD opened a band gap for efficient FET operation and modulated the Fermi energy level for n-type or p-type features. The similarity between the chemical structure of graphene and organic semiconductors suggests potential applications of graphene in organic devices. We

  8. Selective catalytic burning of graphene by SiOx layer depletion.

    PubMed

    Lee, Kyoung-Jae; Ihm, Kyuwook; Kumar, Yogesh; Baik, Jaeyoon; Yang, Mihyun; Shin, Hyun-Joon; Kang, Tai-Hee; Chung, Sukmin; Hong, Byung Hee

    2014-01-01

    We report catalytic decomposition of few-layer graphene on an Au/SiOx/Si surface wherein oxygen is supplied by dissociation of the native SiOx layer at a relatively low temperature of 400 °C. The detailed chemical evolution of the graphene covered SiOx/Si surface with and without gold during the catalytic process is investigated using a spatially resolved photoelectron emission method. The oxygen atoms from the native SiOx layer activate the gold-mediated catalytic decomposition of the entire graphene layer, resulting in the formation of direct contact between the Au and the Si substrate. The notably low contact resistivity found in this system suggests that the catalytic depletion of a SiOx layer could realize a new way to micromanufacture high-quality electrical contact. PMID:24316816

  9. Work function engineering of single layer graphene by irradiation-induced defects

    SciTech Connect

    Kim, Jong-Hun; Hwang, Jin Heui; Kwon, Sangku; Young Park, Jeong; Suh, Joonki; Tongay, Sefaattin; Hwang, C. C.; Wu, Junqiao

    2013-10-21

    We report the tuning of electrical properties of single layer graphene by α-beam irradiation. As the defect density increases upon irradiation, the surface potential of the graphene changes, as determined by Kelvin probe force microscopy and Raman spectroscopy studies. X-ray photoelectron spectroscopy studies indicate that the formation of C/O bonding is promoted as the dose of irradiation increases when at atmospheric conditions. Our results show that the surface potential of the graphene can be engineered by introducing atomic-scale defects via irradiation with high-energy particles.

  10. Monolayer Graphene as Ultimate Chemical Passivation Layer for Arbitrarily Shaped Metal Surfaces

    SciTech Connect

    Sutter E.; Albrecht, P.; Camino, F.E.; Sutter, P.

    2010-12-01

    Monolayer graphene was grown on polycrystalline Ru thin films on patterned fused silica. The Ru films grow with columnar structure with strongly aligned grains exposing flat (0 0 0 1) surface facets within the 3D geometric patterns and on the adjacent planar silica surface. The monolayer graphene was found to completely and uniformly cover the Ru films on the complex engineered substrates. In addition, we demonstrate that the single atomic layer graphene protects the underlying metal surface against reaction with ambient gases of particular importance for applications such as concave focusing mirrors, non-planar microelectrode arrays, etc.

  11. Dielectric function for doped graphene layer with barium titanate

    NASA Astrophysics Data System (ADS)

    Martinez Ramos, Manuel; Garces Garcia, Eric; Magana, Fernado; Vazquez Fonseca, Gerardo Jorge

    2015-03-01

    The aim of our study is to calculate the dielectric function for a system formed with a graphene layer doped with barium titanate. Density functional theory, within the local density approximation, plane-waves and pseudopotentials scheme as implemented in Quantum Espresso suite of programs was used. We considered 128 carbon atoms with a barium titanate cluster of 11 molecules as unit cell with periodic conditions. The geometry optimization is achieved. Optimization of structural configuration is performed by relaxation of all atomic positions to minimize their total energies. Band structure, density of states and linear optical response (the imaginary part of dielectric tensor) were calculated. We thank Dirección General de Asuntos del Personal Académico de la Universidad Nacional Autónoma de México, partial financial support by Grant IN-106514 and we also thank Miztli Super-Computing center the technical assistance.

  12. Selective growth of graphene in layer-by-layer via chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Park, Jaehyun; An, Hyosub; Choi, Dong-Chul; Hussain, Sajjad; Song, Wooseok; An, Ki-Seok; Lee, Won-Jun; Lee, Naesung; Lee, Wan-Gyu; Jung, Jongwan

    2016-07-01

    Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (~40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices.Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene

  13. Spectroscopic characterization of charge carrier anisotropic motion in twisted few-layer graphene

    NASA Astrophysics Data System (ADS)

    Kandyba, Viktor; Yablonskikh, Mikhail; Barinov, Alexei

    2015-11-01

    Graphene, a layer of carbon atoms in a honeycomb lattice, captures enormous interest as probably the most promising component of future electronics thanks to its mechanical robustness, flexibility, and unique charge carrier quasiparticles propagating like massless high energy Dirac fermions. If several graphene layers form a stack, the interaction between them is, on the one hand, weak, allowing realization of various registries between the layers and, on the other hand, strong enough for a wide range tuning of the electronic properties. Here we grow few layer graphene with various number of layers and twist configurations and address the electronic properties of individual atomic layers in single microscopic domains using angle-resolved photoelectron spectromicroscopy. The dependence of the interlayer coupling on the twist angle is analyzed and, in the domains with tri-layers and more, if different rotations are present, the electrons in weaker coupled adjacent layers are shown to have different properties manifested by coexisting van Hove singularities, moiré superlattices with corresponding superlattice Dirac points, and charge carrier group velocity renormalizations. Moreover, pronounced anisotropy in the charge carrier motion, opening a possibility to transform strongly coupled graphene bilayers into quasi one-dimensional conductors, is observed.

  14. Spectroscopic characterization of charge carrier anisotropic motion in twisted few-layer graphene

    PubMed Central

    Kandyba, Viktor; Yablonskikh, Mikhail; Barinov, Alexei

    2015-01-01

    Graphene, a layer of carbon atoms in a honeycomb lattice, captures enormous interest as probably the most promising component of future electronics thanks to its mechanical robustness, flexibility, and unique charge carrier quasiparticles propagating like massless high energy Dirac fermions. If several graphene layers form a stack, the interaction between them is, on the one hand, weak, allowing realization of various registries between the layers and, on the other hand, strong enough for a wide range tuning of the electronic properties. Here we grow few layer graphene with various number of layers and twist configurations and address the electronic properties of individual atomic layers in single microscopic domains using angle-resolved photoelectron spectromicroscopy. The dependence of the interlayer coupling on the twist angle is analyzed and, in the domains with tri-layers and more, if different rotations are present, the electrons in weaker coupled adjacent layers are shown to have different properties manifested by coexisting van Hove singularities, moiré superlattices with corresponding superlattice Dirac points, and charge carrier group velocity renormalizations. Moreover, pronounced anisotropy in the charge carrier motion, opening a possibility to transform strongly coupled graphene bilayers into quasi one-dimensional conductors, is observed. PMID:26548567

  15. Electromechanical coupling in atomically thin MoS2 and graphene

    NASA Astrophysics Data System (ADS)

    Manzeli, Sajedeh; Benameur, Muhammed Malik; Allain, Adrien; Ghadimi, Amirhossein; Tosun, Mahmut; Kis, Andras; Gargiulo, Fernando; Autès, Gabriel; Yazyev, Oleg V.

    Nanoelectromechanical systems (NEMS) based on novel materials such as graphene and MoS2 allow studying their electromechanical characteristics. Here, we incorporate single and bilayer MoS2 and graphene into NEMS and investigated their electromechanical behavior. We observe a Strain-induced bandgap modulation in atomically thin MoS2 membranes with a thickness dependent modulation rate. Finite element modeling is used to extract the piezoresistive gauge factor for MoS2. In the case of graphene, deflection of monolayer graphene nanoribbons results in a linear increase in their electrical resistance where an upper limit is estimated for the gauge factor. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. Our numerical simulations indicate that these oscillations arise from quantum mechanical interference in the transition region induced by sliding of individual graphene layers with respect to each other. Our results reveal that atomically thin MoS2 membranes show strong piezoresistive effect, comparable to the state-of-the-art silicon sensors. Moreover, bilayer graphene conceals unexpectedly novel physics allowing the rare observation of room temperature electronic interference phenomena.

  16. Atomic force spectroscopy and density-functional study of graphene corrugation on Ru(0001)

    NASA Astrophysics Data System (ADS)

    Voloshina, Elena; Dedkov, Yuriy

    2016-06-01

    Graphene, the thinnest material in the world, can form moiré structures on different substrates, including graphite, h -BN, or metal surfaces. In such systems, the structure of graphene, i.e., its corrugation, as well as its electronic and elastic properties, are defined by the combination of the system geometry and local interaction strength at the interface. The corrugation in such structures on metals is heavily extracted from diffraction or local probe microscopy experiments, and it can be obtained only via comparison with theoretical data, which usually simulate the experimental findings. Here we show that graphene corrugation on metals can be measured directly employing atomic force spectroscopy, and the obtained value coincides with state-of-the-art theoretical results. The presented results demonstrate an unexpected space selectivity for the Δ f (z ) signal in the atomic force spectroscopy in the moiré graphene lattice on Ru(0001), which is explained by the different response of the graphene layer on the indentation process. We also address the elastic reaction of the formed graphene nanodoms on the indentation process by the scanning tip that is important for the modeling and fabrication of graphene-based nanoresonators on the nanoscale.

  17. On-Surface Synthesis of Atomically Precise Graphene Nanoribbons.

    PubMed

    Talirz, Leopold; Ruffieux, Pascal; Fasel, Roman

    2016-08-01

    The surface-assisted polymerization and cyclodehydrogenation of specifically designed organic precursors provides a route toward atomically precise graphene nanoribbons, which promises to combine the outstanding electronic properties of graphene with a bandgap that is sufficiently large for room-temperature digital-logic applications. Starting from the basic concepts behind the on-surface synthesis approach, this report covers the progress made in understanding the different reaction steps, in synthesizing atomically precise graphene nanoribbons of various widths and edge structures, and in characterizing their properties, ending with an outlook on the challenges that still lie ahead. PMID:26867990

  18. Water Desalination Using Nanoporous Single-Layer Graphene with Tunable Pore Size

    DOE PAGESBeta

    Surwade, Sumedh P.; Smirnov, Sergei N.; Vlassiouk, Ivan V.; Unocic, Raymond R.; Veith, Gabriel M.; Dai, Sheng; Mahurin, Shannon Mark

    2015-03-23

    Graphene has great potential to serve as a separation membrane due to its unique properties such as chemical and mechanical stability, flexibility and most importantly its one-atom thickness. In this study, we demonstrate first experimental evidence of the use of single-layer porous graphene as a desalination membrane. Nanometer-sized pores are introduced into single layer graphene using a convenient oxygen plasma etching process that permits tuning of the pore size. The resulting porous graphene membrane exhibited high rejection of salt ions and rapid water transport, thus functioning as an efficient water desalination membrane. Salt rejection selectivity of nearly 100% and exceptionallymore » high water fluxes exceeding 105 g m-2 s-1 at 40 C were measured using saturated water vapor as a driving force.« less

  19. Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)

    NASA Astrophysics Data System (ADS)

    Mao, Jinhai; Huang, Li; Pan, Yi; Gao, Min; He, Junfeng; Zhou, Haitao; Guo, Haiming; Tian, Yuan; Zou, Qiang; Zhang, Lizhi; Zhang, Haigang; Wang, Yeliang; Du, Shixuan; Zhou, Xingjiang; Castro Neto, A. H.; Gao, Hong-Jun

    2012-02-01

    We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.

  20. Water Desalination Using Nanoporous Single-Layer Graphene with Tunable Pore Size

    SciTech Connect

    Surwade, Sumedh P.; Smirnov, Sergei N.; Vlassiouk, Ivan V.; Unocic, Raymond R.; Veith, Gabriel M.; Dai, Sheng; Mahurin, Shannon Mark

    2015-03-23

    Graphene has great potential to serve as a separation membrane due to its unique properties such as chemical and mechanical stability, flexibility and most importantly its one-atom thickness. In this study, we demonstrate first experimental evidence of the use of single-layer porous graphene as a desalination membrane. Nanometer-sized pores are introduced into single layer graphene using a convenient oxygen plasma etching process that permits tuning of the pore size. The resulting porous graphene membrane exhibited high rejection of salt ions and rapid water transport, thus functioning as an efficient water desalination membrane. Salt rejection selectivity of nearly 100% and exceptionally high water fluxes exceeding 105 g m-2 s-1 at 40 C were measured using saturated water vapor as a driving force.

  1. Nanoscale imaging of freestanding nitrogen doped single layer graphene.

    PubMed

    Iyer, Ganjigunte R S; Wang, Jian; Wells, Garth; Bradley, Michael P; Borondics, Ferenc

    2015-02-14

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale. PMID:25584935

  2. Evaluation of multi-layered graphene surface plasmon resonance-based transmission type fiber optic sensor.

    PubMed

    Kim, Jang Ah; Kulkarni, Atul; Kang, Junmo; Amin, Rashid; Choi, Jae-Boong; Park, Sung Ha; Kim, Taesung

    2012-07-01

    Graphene is a zero band-gap semi-metal with remarkable electromagnetic and mechanical characteristics. This study is the first ever attempt to use graphene in the surface plasmon resonance (SPR) sensor as replacement material for gold/silver. Graphene, comprised of a single atomic layer of carbon, is a purely two-dimensional material and it is an ideal candidate for use as a biosensor because of its high surface-to-volume ratio. This sensor is based on the resonance occasion of the surface plasmon wave (SPW) according to the dielectric constants of each metal film and detected material in gas or aqueous phase. Graphene in the SPR sensor is expected to enlarge the range of analyte to bio-aerosols based on the superior electromagnetic properties of graphene. In this study, a SPR-based fiber optic sensor coated with multi-layered graphene is described. The multi-layered graphene film synthesized by chemical vapor deposition (CVD) on Ni substrate was transferred on the sensing region of an optical fiber. The graphene coated SPR sensor is used to analyze the interaction between structured DNA biotin and Streptavidin is analyzed. Transmitted light after passing through the sensing region is measured by a spectrometer and multimeter. As the light source, blue light which of 450 to 460 nm in wavelength was used. We observed the SPR phenomena in the sensor and show the contrary trends between bare fiber and graphene coated fiber. The fabricated graphene based fiber optic sensor shows excellent detection sensitivity of the interaction between structured DNA and Streptavidin. PMID:22966575

  3. Large-Area Quality Control of Atomically-Thin Layered Materials

    NASA Astrophysics Data System (ADS)

    Nolen, Craig Merten

    Fast progress in chemical vapor deposition of graphene and other quasi-two-dimensional layered materials such as topological insulators call for development of a reliable high-throughput method of layered materials identification and quality control. The number of atomic planes in graphene or other ultra-thin films has to be determined very fast and over large wafer-scale areas. The previously existed methods of accurate counting of the number of atomic planes in few-layer graphene were primarily based on micro-Raman spectroscopy. These methods were local, slow, and could not be scaled up to characterize the whole wafers. In this dissertation research I proposed and developed an automatic approach for graphene inspection over the wafer-size areas. The proposed method can be scaled up for industrial use. It is based on the image processing analysis of the pseudo-color contrasts uniquely assigned to each few-layer graphene region characterized by a specific number of atomic planes. The initial calibration of the technique is performed with the help of micro-Raman spectroscopy. The image processing is also used to account for the lighting non-uniformity of the samples. Implementation of the technique developed in this dissertation research reduces the cost and time required for graphene identification and quality assessment, and can become the next major impetus for practical applications of graphene, few-layer graphene and other atomically-thin films. The technique was tested on mechanically exfoliated graphene and then extended to the chemical-vapor-deposited graphene, and to bismuth telluride topological insulator thin films. The second part of the dissertation research deals with development of the electrostatic transfer process. The investigated approach allows one to transfer the patterned few-layer graphene films controllably to Si3N4 substrates compatible with other materials. The large-area quality control and graphene transfer techniques developed in this

  4. Dynamical screening of the van der Waals interaction between graphene layers.

    PubMed

    Dappe, Y J; Bolcatto, P G; Ortega, J; Flores, F

    2012-10-24

    The interaction between graphene layers is analyzed combining local orbital DFT and second order perturbation theory. For this purpose we use the linear combination of atomic orbitals-orbital occupancy (LCAO-OO) formalism, that allows us to separate the interaction energy as the sum of a weak chemical interaction between graphene layers plus the van der Waals interaction (Dappe et al 2006 Phys. Rev. B 74 205434). In this work, the weak chemical interaction is calculated by means of corrected-LDA calculations using an atomic-like sp(3)d(5) basis set. The van der Waals interaction is calculated by means of second order perturbation theory using an atom-atom interaction approximation and the atomic-like-orbital occupancies. We also analyze the effect of dynamical screening in the van der Waals interaction using a simple model. We find that this dynamical screening reduces by 40% the van der Waals interaction. Taking this effect into account, we obtain a graphene-graphene interaction energy of 70 ± 5 meV/atom in reasonable agreement with the experimental evidence. PMID:23032606

  5. Dynamical screening of the van der Waals interaction between graphene layers

    NASA Astrophysics Data System (ADS)

    Dappe, Y. J.; Bolcatto, P. G.; Ortega, J.; Flores, F.

    2012-10-01

    The interaction between graphene layers is analyzed combining local orbital DFT and second order perturbation theory. For this purpose we use the linear combination of atomic orbitals-orbital occupancy (LCAO-OO) formalism, that allows us to separate the interaction energy as the sum of a weak chemical interaction between graphene layers plus the van der Waals interaction (Dappe et al 2006 Phys. Rev. B 74 205434). In this work, the weak chemical interaction is calculated by means of corrected-LDA calculations using an atomic-like sp3d5 basis set. The van der Waals interaction is calculated by means of second order perturbation theory using an atom-atom interaction approximation and the atomic-like-orbital occupancies. We also analyze the effect of dynamical screening in the van der Waals interaction using a simple model. We find that this dynamical screening reduces by 40% the van der Waals interaction. Taking this effect into account, we obtain a graphene-graphene interaction energy of 70 ± 5 meV/atom in reasonable agreement with the experimental evidence.

  6. Nanoscale imaging of freestanding nitrogen doped single layer graphene

    NASA Astrophysics Data System (ADS)

    Iyer, Ganjigunte R. S.; Wang, Jian; Wells, Garth; Bradley, Michael P.; Borondics, Ferenc

    2015-01-01

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale.Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05385k

  7. Direct Ablation by Laser of Single Graphene Monolayer and Graphene/Photopolymer Double Layer.

    PubMed

    Min, Jeong; Han, Jae-Hee; Lee, Jung-Hun; Yoo, Ji-Beom; Kwon, Sang Jik; Cho, Eou Sik

    2015-03-01

    A diode-pumped Q-switched neodymium-doped yttrium vanadate (Nd:YVO4, λ = 1064 nm) laser was applied to obtain graphene patterns on a photopolymer layer by direct ablation. In the transfer process of the graphene layer, the photopolymer was employed as a graphene supporting layer and it was not removed for the simplification of the process. The laser ablation was carried out on graphene/photopolymer double layers for various beam conditions. The results showed that the laser-ablated widths on the graphene/photopolymer double layer were much greater than those on the graphene monolayer, especially at lower scanning speeds and at higher repetition rates. The photopolymer layer was not removed by the laser ablation, and the thermal energy was considered to have been dissipated in the lateral direction of graphene instead of being conducted vertically to the glass substrate. The Raman spectrum results showed that the graphene layer was clearly removed on the laser-ablated region of interest. PMID:26413616

  8. Controlling Interfacial Reactions and Intermetallic Compound Growth at the Interface of a Lead-free Solder Joint with Layer-by-Layer Transferred Graphene.

    PubMed

    Ko, Yong-Ho; Lee, Jong-Dae; Yoon, Taeshik; Lee, Chang-Woo; Kim, Taek-Soo

    2016-03-01

    The immoderate growth of intermetallic compounds (IMCs) formed at the interface of a solder metal and the substrate during soldering can degrade the mechanical properties and reliability of a solder joint in electronic packaging. Therefore, it is critical to control IMC growth at the solder joints between the solder and the substrate. In this study, we investigated the control of interfacial reactions and IMC growth by the layer-by-layer transfer of graphene during the reflow process at the interface between Sn-3.0Ag-0.5Cu (in wt %) lead-free solder and Cu. As the number of graphene layers transferred onto the surface of the Cu substrate increased, the thickness of the total IMC (Cu6Sn5 and Cu3Sn) layer decreased. After 10 repetitions of the reflow process for 50 s above 217 °C, the melting temperature of Sn-3.0Ag-0.5Cu, with a peak temperature of 250 °C, the increase in thickness of the total IMC layer at the interface with multiple layers of graphene was decreased by more than 20% compared to that at the interface of bare Cu without graphene. Furthermore, the average diameter of the Cu6Sn5 scallops at the interface with multiple layers of graphene was smaller than that at the interface without graphene. Despite 10 repetitions of the reflow process, the growth of Cu3Sn at the interface with multiple layers of graphene was suppressed by more than 20% compared with that at the interface without graphene. The multiple layers of graphene at the interface between the solder metal and the Cu substrate hindered the diffusion of Cu atoms from the Cu substrate and suppressed the reactions between Cu and Sn in the solder. Thus, the multiple layers of graphene transferred at the interface between dissimilar metals can control the interfacial reaction and IMC growth occurring at the joining interface. PMID:26856638

  9. Strong piezoelectricity in single-layer graphene deposited on SiO2 grating substrates

    PubMed Central

    da Cunha Rodrigues, Gonçalo; Zelenovskiy, Pavel; Romanyuk, Konstantin; Luchkin, Sergey; Kopelevich, Yakov; Kholkin, Andrei

    2015-01-01

    Electromechanical response of materials is a key property for various applications ranging from actuators to sophisticated nanoelectromechanical systems. Here electromechanical properties of the single-layer graphene transferred onto SiO2 calibration grating substrates is studied via piezoresponse force microscopy and confocal Raman spectroscopy. The correlation of mechanical strains in graphene layer with the substrate morphology is established via Raman mapping. Apparent vertical piezoresponse from the single-layer graphene supported by underlying SiO2 structure is observed by piezoresponse force microscopy. The calculated vertical piezocoefficient is about 1.4 nm V−1, that is, much higher than that of the conventional piezoelectric materials such as lead zirconate titanate and comparable to that of relaxor single crystals. The observed piezoresponse and achieved strain in graphene are associated with the chemical interaction of graphene's carbon atoms with the oxygen from underlying SiO2. The results provide a basis for future applications of graphene layers for sensing, actuating and energy harvesting. PMID:26108468

  10. High temperature and current density induced degradation of multi-layer graphene

    SciTech Connect

    Wang, Baoming; Haque, M. A.; Mag-isa, Alexander E.; Kim, Jae-Hyun; Lee, Hak-Joo

    2015-10-19

    We present evidence of moderate current density, when accompanied with high temperature, promoting migration of foreign atoms on the surface of multi-layer graphene. Our in situ transmission electron microscope experiments show migration of silicon atoms at temperatures above 800 °C and current density around 4.2 × 10{sup 7} A/cm{sup 2}. Originating from the micro-machined silicon structures that clamp the freestanding specimen, the atoms are observed to react with the carbon atoms in the multi-layer graphene to produce silicon carbide at temperatures of 900–1000 °C. In the absence of electrical current, there is no migration of silicon and only pyrolysis of polymeric residue is observed.

  11. Spotting 2D atomic layers on aluminum nitride thin films.

    PubMed

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers. PMID:26422387

  12. Spotting 2D atomic layers on aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Raghavan, Srinivasan

    2015-10-01

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  13. Plasmon modes of circular cylindrical double-layer graphene.

    PubMed

    Zhao, Tao; Hu, Min; Zhong, Renbin; Chen, Xiaoxing; Zhang, Ping; Gong, Sen; Zhang, Chao; Liu, Shenggang

    2016-09-01

    In this paper, a theoretical investigation on plasmon modes in a circular cylindrical double-layer graphene structure is presented. Due to the interlayer electromagnetic interaction, there exist two branches of plasmon modes, the optical plasmon mode and the acoustic plasmon mode. The characteristics of these two modes, such as mode pattern, effective mode index and propagation loss, are analyzed. The modal behaviors can be effectively tuned by changing the distance between two graphene layers, the chemical potential of graphene and the permittivity of interlayer dielectric. Importantly, the breakup of tradeoff between mode confinement and propagation loss is discovered in the distance-dependent modal behavior, which originates from the unique dispersion properties of a double-layer graphene system. As a consequence, both strong mode confinement and longer propagation length can be achieved. Our results may provide good opportunities for developing applications based on graphene plasmonics in circular cylindrical structure. PMID:27607651

  14. Ultrahigh conductivity of large area suspended few layer graphene films

    NASA Astrophysics Data System (ADS)

    Rouhi, Nima; Wang, Yung Yu; Burke, Peter J.

    2012-12-01

    Room-temperature (atmospheric-pressure) electrical conductivity measurements of wafer-scale, large-area suspended (few layer) graphene membranes with areas up to 1000 μm2 (30 μm × 30 μm) are presented. Multiple devices on one wafer can be fabricated with high yield from the same chemical vapor deposition grown graphene sheet, transferred from a nickel growth substrate to large opening in a suspended silicon nitride support membrane. This represents areas two to orders of magnitude larger than prior transport studies on any suspended graphene device (single or few layer). We find a sheet conductivity of ˜2500 e2/h (or about 10 Ω/sq) of the suspended graphene, which is an order of magnitude higher than any previously reported sheet conductance of few layer graphene.

  15. Surface stress of graphene layers supported on soft substrate

    PubMed Central

    Du, Feng; Huang, Jianyong; Duan, Huiling; Xiong, Chunyang; Wang, Jianxiang

    2016-01-01

    We obtain the surface stress of a single layer and multilayers of graphene supported on silicone substrates by measuring the deformation of the graphene-covered substrates induced by the surface tension of liquid droplets together with the Neumann’s triangle concept. We find that the surface stress of the graphene-covered substrate is significant larger than that of the bare substrate, and it increases with increasing graphene layers, and finally reaches a constant value of about 120 mN/m on three and more layers of graphene. This work demonstrates that the apparent surface stress of graphene-substrate systems can be tuned by the substrate and the graphene layers. The surface stress and the tuning effect of the substrate on it may have applications in design and characterization of graphene-based ultra-sensitive sensors and other devices. Moreover, the method may also be used to measure the surface stress of other ultrathin films supported on soft substrates. PMID:27166087

  16. Surface stress of graphene layers supported on soft substrate.

    PubMed

    Du, Feng; Huang, Jianyong; Duan, Huiling; Xiong, Chunyang; Wang, Jianxiang

    2016-01-01

    We obtain the surface stress of a single layer and multilayers of graphene supported on silicone substrates by measuring the deformation of the graphene-covered substrates induced by the surface tension of liquid droplets together with the Neumann's triangle concept. We find that the surface stress of the graphene-covered substrate is significant larger than that of the bare substrate, and it increases with increasing graphene layers, and finally reaches a constant value of about 120 mN/m on three and more layers of graphene. This work demonstrates that the apparent surface stress of graphene-substrate systems can be tuned by the substrate and the graphene layers. The surface stress and the tuning effect of the substrate on it may have applications in design and characterization of graphene-based ultra-sensitive sensors and other devices. Moreover, the method may also be used to measure the surface stress of other ultrathin films supported on soft substrates. PMID:27166087

  17. Surface stress of graphene layers supported on soft substrate

    NASA Astrophysics Data System (ADS)

    Du, Feng; Huang, Jianyong; Duan, Huiling; Xiong, Chunyang; Wang, Jianxiang

    2016-05-01

    We obtain the surface stress of a single layer and multilayers of graphene supported on silicone substrates by measuring the deformation of the graphene-covered substrates induced by the surface tension of liquid droplets together with the Neumann’s triangle concept. We find that the surface stress of the graphene-covered substrate is significant larger than that of the bare substrate, and it increases with increasing graphene layers, and finally reaches a constant value of about 120 mN/m on three and more layers of graphene. This work demonstrates that the apparent surface stress of graphene-substrate systems can be tuned by the substrate and the graphene layers. The surface stress and the tuning effect of the substrate on it may have applications in design and characterization of graphene-based ultra-sensitive sensors and other devices. Moreover, the method may also be used to measure the surface stress of other ultrathin films supported on soft substrates.

  18. Silicon Layer Intercalation and Interface Properties between Graphene and Metal hosts

    NASA Astrophysics Data System (ADS)

    Wang, Yeliang; Mao, Jinhai; Meng, Lei; Gao, Hongjun; Junfeng He Collaboration; Shixuan Du Collaboration; Xingjiang Zhou Collaboration; A. H. Castro Neto Collaboration

    2013-03-01

    Graphene is being considered as a contender as the reference material with extraordinary properties for a post-CMOS technology. The availability of high quality and large scale single crystal graphene is fundamental for it to fulfill its promise in electronic applications. Graphene is usually grown on a metallic substrate from which it has to be transferred before it can be used. However, uncontrolled shear and strain, associated with the transfer and the presence of extended domains, lead to unavoidable tearing, rendering it useless for scalable production. We propose a way to overcome this bottleneck and produce high quality, free standing graphene by intercalating Si in graphene epitaxially grown on metals, like Ru(0001) & Ir(111). This G/Si/metal architecture, produced by the silicon-layer intercalation approach (SIA), was characterized by STM/STS, Raman, and angle resolved electron photoemission spectroscopy (ARPES) and proves the high structural and electronic qualities of the new composite. The SIA eliminates the need for the graphene transfer and also allows for an atomic control of the distance between the graphene and the metal. Graphene Research Center, Singapore National University.

  19. Investigation of the effect of low energy ion beam irradiation on mono-layer graphene

    SciTech Connect

    Xu, Yijun; II. Physikalisches Institut, Universität Göttingen, Friedrich- Hund- Platz 1, 37077 Göttingen; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 ; Zhang, Kun; Brüsewitz, Christoph; Hofsäss, Hans Christian; Wu, Xuemei; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050

    2013-07-15

    In this paper, the effect of low energy irradiation on mono-layer graphene was studied. Mono-layer graphene films were irradiated with B, N and F ions at different energy and fluence. X-ray photoelectron spectroscopy indicates that foreign ions implanted at ion energies below 35 eV could dope into the graphene lattice and form new chemical bonds with carbon atoms. The results of Raman measurement indicate that ion beam irradiation causes defects and disorder to the graphene crystal structure, and the level of defects increases with increasing of ion energy and fluence. Surface morphology images also prove that ion beam irradiation creates damages to graphene film. The experiment results suggest that low-energy irradiation with energies of about 30 eV and fluences up to 5·10{sup 14} cm{sup −2} could realize small amount of doping, while introducing weak damage to graphene. Low energy ion beam irradiation, provides a promising approach for controlled doping of graphene.

  20. Adsorption and intercalation of Cs atoms on epitaxial graphene on Ir(111)

    NASA Astrophysics Data System (ADS)

    Lazic, Predrag; Petrovic, Marin; Srut, Iva; Pletikosic, Ivo; Milun, Milorad; Pervan, Petar; Runte, Sven; Busse, Carsten; Michely, Thomas; Sokcevic, Damir; Brako, Radovan; Atodiresei, Nicolae; Sadowski, Jurek; Pan, Zhi-Hu; Valla, Tonica; Kralj, Marko

    2013-03-01

    From the experimental studies of surface adsorption of Cs atoms and their intercalation under epitaxial graphene on Ir(111) it is known that both - adsorbed and intercalated phase of Cs atoms coexist. However, adsorbed phase is realized as a diluted superlattice adlayer of Cs atom while intercalated phase is a dense Cs layer. The preference for intercalated phase at large Cs layer densities can not be obtained from the DFT calculations with semilocal (GGA) functionals. Only after the van der Waals interaction is taken into account the agreement with experiment is achieved. From the results of calculations it follows that the main energy contribution responsible for the switching of preference from adsorption to intercalation is the graphene delamination energy from the Ir(111) surface which is dominantly of the van der Waals nature.

  1. Atomic-Scale Interfacial Magnetism in Fe/Graphene Heterojunction

    PubMed Central

    Liu, W. Q.; Wang, W. Y.; Wang, J. J.; Wang, F. Q.; Lu, C.; Jin, F.; Zhang, A.; Zhang, Q. M.; Laan, G. van der; Xu, Y. B.; Li, Q. X.; Zhang, R.

    2015-01-01

    Successful spin injection into graphene makes it a competitive contender in the race to become a key material for quantum computation, or the spin-operation-based data processing and sensing. Engineering ferromagnetic metal (FM)/graphene heterojunctions is one of the most promising avenues to realise it, however, their interface magnetism remains an open question up to this day. In any proposed FM/graphene spintronic devices, the best opportunity for spin transport could only be achieved where no magnetic dead layer exists at the FM/graphene interface. Here we present a comprehensive study of the epitaxial Fe/graphene interface by means of X-ray magnetic circular dichroism (XMCD) and density functional theory (DFT) calculations. The experiment has been performed using a specially designed FM1/FM2/graphene structure that to a large extent restores the realistic case of the proposed graphene-based transistors. We have quantitatively observed a reduced but still sizable magnetic moments of the epitaxial Fe ML on graphene, which is well resembled by simulations and can be attributed to the strong hybridization between the Fe 3dz2 and the C 2pz orbitals and the sp-orbital-like behavior of the Fe 3d electrons due to the presence of graphene. PMID:26145155

  2. Electronic and Atomic-Scale Properties of Ultraflat CVD Graphene

    NASA Astrophysics Data System (ADS)

    Gutierrez, Christopher; Rosenthal, Ethan; Dadgar, Ali; Brown, Lola; Lochocki, Edward; Shen, Kyle; Park, Jiwoong; Pasupathy, Abhay

    2014-03-01

    Chemical vapor deposition (CVD) growth on copper foils has proven to be a reliable and cost-effective method for the production of graphene. However, most films grown by this method suffer from misoriented graphene grains as well as topographic roughness due to the polycrystallinity of the underlying copper foil substrate. Recent methods of copper foil treatment have allowed for the growth of graphene predominantly on large single crystal Cu(111) facets. In this talk we discuss scanning tunneling microscope (STM) measurements on such samples that reveal large terraces and atomically-resolved images that allow us to analyze the graphene-copper interaction during the growth. Scanning tunneling spectroscopy (STS) measurements and mapping are further employed to probe the electronic interaction between the graphene and copper substrate.

  3. Graphene Layer Growth Chemistry: Five-Six-Ring Flip Reaction

    SciTech Connect

    Whitesides, Russell; Domin, Dominik; Lester Jr., William A.; Frenklach, Michael

    2007-03-24

    A theoretical study revealed a new reaction pathway, in which a fused five and six-membered ring complex on the zigzag edge of a graphene layer isomerizes to reverse its orientation, or 'flips,' after activation by a gaseous hydrogen atom. The process is initiated by hydrogen addition to or abstraction from the surface complex. The elementary steps of the migration pathway were analyzed using density-functional theory (DFT) calculations to examine the region of the potential energy surface associated with the pathway. The DFT calculations were performed on substrates modeled by the zigzag edges of tetracene and pentacene. Rate constants for the flip reaction were obtained by the solution of energy master equation utilizing the DFT energies, frequencies, and geometries. The results indicate that this reaction pathway is competitive with other pathways important to the edge evolution of aromatic species in high temperature environments.

  4. PREFACE: Ultrathin layers of graphene, h-BN and other honeycomb structures Ultrathin layers of graphene, h-BN and other honeycomb structures

    NASA Astrophysics Data System (ADS)

    Geber, Thomas; Oshima, Chuhei

    2012-08-01

    Since ancient times, pure carbon materials have been familiar in human society—not only diamonds in jewellery and graphite in pencils, but also charcoal and coal which have been used for centuries as fuel for living and industry. Carbon fibers are stronger, tougher and lighter than steel and increase material efficiency because of their lower weight. Today, carbon fibers and related composite materials are used to make the frames of bicycles, cars and even airplane parts. The two-dimensional allotrope, now called graphene, is just a single layer of carbon atoms, locked together in a strongly bonded honeycomb lattice. In plane, graphene is stiffer than diamond, but out-of-plane it is soft, like rubber. It is virtually invisible, may conduct electricity (heat) better than copper and weighs next to nothing. Carbon compounds with two carbon atoms as a base, such as graphene, graphite or diamond, have isoelectronic sister compounds made of boron-nitrogen pairs: hexagonal and cubic boron nitride, with almost the same lattice constant. Although the two 2D sisters, graphene and h-BN, have the same number of valence electrons, their electronic properties are very different: freestanding h-BN is an insulator, while charge carriers in graphene are highly mobile. The past ten years have seen a great expansion in studies of single-layer and few-layer graphene. This activity has been concerned with the π electron transport in graphene, in electric and magnetic fields. More than 30 years ago, however, single-layer graphene and h-BN on solid surfaces were widely investigated. It was noted that they drastically changed the chemical reactivity of surfaces, and they were known to 'poison' heterogeneous catalysts, to passivate surfaces, to prevent oxidation of surfaces and to act as surfactants. Also, it was realized that the controlled growth of h-BN and graphene on substrates yields the formation of mismatch driven superstructures with peculiar template functionality on the

  5. Atomic-scale control of graphene magnetism by using hydrogen atoms.

    PubMed

    González-Herrero, Héctor; Gómez-Rodríguez, José M; Mallet, Pierre; Moaied, Mohamed; Palacios, Juan José; Salgado, Carlos; Ugeda, Miguel M; Veuillen, Jean-Yves; Yndurain, Félix; Brihuega, Iván

    2016-04-22

    Isolated hydrogen atoms absorbed on graphene are predicted to induce magnetic moments. Here we demonstrate that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a ~20-millielectron volt spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is essentially localized on the carbon sublattice opposite to the one where the hydrogen atom is chemisorbed. This atomically modulated spin texture, which extends several nanometers away from the hydrogen atom, drives the direct coupling between the magnetic moments at unusually long distances. By using the STM tip to manipulate hydrogen atoms with atomic precision, it is possible to tailor the magnetism of selected graphene regions. PMID:27102478

  6. Atomic-scale control of graphene magnetism by using hydrogen atoms

    NASA Astrophysics Data System (ADS)

    González-Herrero, Héctor; Gómez-Rodríguez, José M.; Mallet, Pierre; Moaied, Mohamed; Palacios, Juan José; Salgado, Carlos; Ugeda, Miguel M.; Veuillen, Jean-Yves; Yndurain, Félix; Brihuega, Iván

    2016-04-01

    Isolated hydrogen atoms absorbed on graphene are predicted to induce magnetic moments. Here we demonstrate that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a ~20–millielectron volt spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is essentially localized on the carbon sublattice opposite to the one where the hydrogen atom is chemisorbed. This atomically modulated spin texture, which extends several nanometers away from the hydrogen atom, drives the direct coupling between the magnetic moments at unusually long distances. By using the STM tip to manipulate hydrogen atoms with atomic precision, it is possible to tailor the magnetism of selected graphene regions.

  7. Defect formation in single layer graphene under extreme ultraviolet irradiation

    NASA Astrophysics Data System (ADS)

    Gao, A.; Zoethout, E.; Sturm, J. M.; Lee, C. J.; Bijkerk, F.

    2014-10-01

    We study extreme ultraviolet (EUV) radiation induced defects in single-layer graphene. Two mechanisms for inducing defects in graphene were separately investigated: photon induced chemical reactions between graphene and background residual gases, and breaking sp2 bonds, due to photon and/or photoelectrons induced bond cleaving. Raman spectroscopy shows that D peak intensities grow after EUV irradiation with increasing water partial pressure in the exposure chamber. Temperature-programmed desorption (TPD) experiments prove that EUV radiation results in water dissociation on the graphene surface. The oxidation of graphene, caused by water dissociation, is triggered by photon and/or photoelectron induced dissociation of water. Our studies show that the EUV photons break the sp2 bonds, forming sp3 bonds, leading to defects in graphene.

  8. Direct growth of ultrafast transparent single-layer graphene defoggers.

    PubMed

    Tan, Lifang; Zeng, Mengqi; Wu, Qiong; Chen, Linfeng; Wang, Jiao; Zhang, Tao; Eckert, Jürgen; Rümmeli, Mark H; Fu, Lei

    2015-04-17

    The idea flat surface, superb thermal conductivity and excellent optical transmittance of single-layer graphene promise tremendous potential for graphene as a material for transparent defoggers. However, the resistance of defoggers made from conventional transferred graphene increases sharply once both sides of the film are covered by water molecules which, in turn, leads to a temperature drop that is inefficient for fog removal. Here, the direct growth of large-area and continuous graphene films on quartz is reported, and the first practical single-layer graphene defogger is fabricated. The advantages of this single-layer graphene defogger lie in its ultrafast defogging time for relatively low input voltages and excellent defogging robustness. It can completely remove fog within 6 s when supplied a safe voltage of 32 V. No visible changes in the full defogging time after 50 defogging cycles are observed. This outstanding performance is attributed to the strong interaction forces between the graphene films and the substrates, which prevents the permeation of water molecules. These directly grown transparent graphene defoggers are expected to have excellent prospects in various applications such as anti-fog glasses, auto window and mirror defogging. PMID:25510608

  9. Ultraviolet laser deposition of graphene thin films without catalytic layers

    NASA Astrophysics Data System (ADS)

    Sarath Kumar, S. R.; Alshareef, H. N.

    2013-01-01

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  10. Length-dependent thermal conductivity in suspended single-layer graphene

    NASA Astrophysics Data System (ADS)

    Xu, Xiangfan; Pereira, Luiz F. C.; Wang, Yu; Wu, Jing; Zhang, Kaiwen; Zhao, Xiangming; Bae, Sukang; Tinh Bui, Cong; Xie, Rongguo; Thong, John T. L.; Hong, Byung Hee; Loh, Kian Ping; Donadio, Davide; Li, Baowen; Özyilmaz, Barbaros

    2014-04-01

    Graphene exhibits extraordinary electronic and mechanical properties, and extremely high thermal conductivity. Being a very stable atomically thick membrane that can be suspended between two leads, graphene provides a perfect test platform for studying thermal conductivity in two-dimensional systems, which is of primary importance for phonon transport in low-dimensional materials. Here we report experimental measurements and non-equilibrium molecular dynamics simulations of thermal conduction in suspended single-layer graphene as a function of both temperature and sample length. Interestingly and in contrast to bulk materials, at 300 K, thermal conductivity keeps increasing and remains logarithmically divergent with sample length even for sample lengths much larger than the average phonon mean free path. This result is a consequence of the two-dimensional nature of phonons in graphene, and provides fundamental understanding of thermal transport in two-dimensional materials.

  11. Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)

    SciTech Connect

    Velez-Fort, E.; Ouerghi, A.; Silly, M. G.; Sirtti, F.; Eddrief, M.; Marangolo, M.; Shukla, A.

    2014-03-03

    Structural and electronic properties of epitaxial graphene on 4H-SiC were studied before and after an atomic oxidation process. X-ray photoemission spectroscopy indicates that oxygen penetrates into the substrate and decouples a part of the interface layer. Raman spectroscopy demonstrates the increase of defects due to the presence of oxygen. Interestingly, we observed on the near edge x-ray absorption fine structure spectra a splitting of the π* peak into two distinct resonances centered at 284.7 and 285.2 eV. This double structure smears out after the oxidation process and permits to probe the interface architecture between graphene and the substrate.

  12. Chemical gating of epitaxial graphene through ultrathin oxide layers

    NASA Astrophysics Data System (ADS)

    Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

    2015-07-01

    We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal.We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting

  13. Chemical storage of hydrogen in few-layer graphene.

    PubMed

    Subrahmanyam, K S; Kumar, Prashant; Maitra, Urmimala; Govindaraj, A; Hembram, K P S S; Waghmare, Umesh V; Rao, C N R

    2011-02-15

    Birch reduction of few-layer graphene samples gives rise to hydrogenated samples containing up to 5 wt % of hydrogen. Spectroscopic studies reveal the presence of sp(3) C-H bonds in the hydrogenated graphenes. They, however, decompose readily on heating to 500 °C or on irradiation with UV or laser radiation releasing all the hydrogen, thereby demonstrating the possible use of few-layer graphene for chemical storage of hydrogen. First-principles calculations throw light on the mechanism of dehydrogenation that appears to involve a significant reconstruction and relaxation of the lattice. PMID:21282617

  14. Chemical storage of hydrogen in few-layer graphene

    PubMed Central

    Subrahmanyam, K. S.; Kumar, Prashant; Maitra, Urmimala; Govindaraj, A.; Hembram, K. P. S. S.; Waghmare, Umesh V.; Rao, C. N. R.

    2011-01-01

    Birch reduction of few-layer graphene samples gives rise to hydrogenated samples containing up to 5 wt % of hydrogen. Spectroscopic studies reveal the presence of sp3 C-H bonds in the hydrogenated graphenes. They, however, decompose readily on heating to 500 °C or on irradiation with UV or laser radiation releasing all the hydrogen, thereby demonstrating the possible use of few-layer graphene for chemical storage of hydrogen. First-principles calculations throw light on the mechanism of dehydrogenation that appears to involve a significant reconstruction and relaxation of the lattice. PMID:21282617

  15. Atomic layer-by-layer epitaxy of cuprate superconductors

    SciTech Connect

    Bozovic, I.; Eckstein, J.N.; Virshup, G.F.

    1994-03-01

    A technique for atomic layer-by-layer epitaxy of cuprate superconductors and other complex oxides has been developed at Varian. The samples are engineered by stacking molecular layers of different compounds to assemble multilayers and superlattices, by adding or omitting atomic monolayers to create novel compounds, and by doping within specified atomic monolayers. Apart form manufacturing trilayer Josephson junctions with I{sub c}R{sub n}>5 mV, this technique enables one to address fundamental issues such as the dimensionality of HTSC state, existence of long-range proximity effects, occurrence of resonant tunneling etc., as well as to synthesize novel metastable HTSC compounds. 4 refs., 2 figs.

  16. Characterization of Graphene and Transition Metal Dichalcogenide at the Atomic Scale

    NASA Astrophysics Data System (ADS)

    Liu, Zheng; Lin, Yung-Chang; Warner, Jamie H.; Teng, Po-Yuan; Yeh, Chao-Hui; Chiu, Po-Wen; Iijima, Sumio; Suenga, Kazu

    2015-12-01

    Edge structures and atomic defects are of fundamental importance since they can significantly affect the physical and chemical properties of low-dimensional materials, such as nanoribbons, and therefore merit thorough investigations at the atomic level. Recent developments of direct imaging and analytical techniques using an aberration-corrected scanning transmission electron microscope (STEM) have provided direct access to information on the local atomic structure and the chemical composition at the atomic scale. In this review, we report on the discrimination of single atoms including dopant atoms on a monolayered transition-metal dichalcogenide (TMD) nanoribbon and a single nitrogen adatom on graphene by time-resolved annular dark-field (ADF) imaging and spatially resolved electron energy loss spectroscopy (EELS). We also show that in situ scanning transmission electron microscopy can be used to monitor the structural transformation between semiconducting (2H) and metallic (1T) phases in monolayer MoS2, and can enable direct observation of in-plane graphene growth at a step edge of a bi-layer graphene and domain boundary formation during growth with atomic-resolution.

  17. Raman and ellipsometry spectroscopic analysis of graphene films grown directly on Si substrate via CVD technique for estimating the graphene atomic planes number

    NASA Astrophysics Data System (ADS)

    Al-Hazmi, F. S.; Beall, Gary W.; Al-Ghamdi, A. A.; Alshahrie, Ahmed; Shokr, F. S.; Mahmoud, Waleed E.

    2016-08-01

    Two reliable approaches for estimating the number of atomic planes of graphene films grown on Si substrate were demonstrated by Raman and ellipsometry spectroscopies. The first approach depends on the measurement of the ratio of the integrated Raman scattering intensity of the graphene G band to the optical phonon band of Si substrate (IG/ISi). The second approach belongs to ellipsometry measurement of the ratio of the amplitude of the reflected polarized light from the surface of the graphene films to the amplitude of reflected polarized light from the surface of the Si substrate (ΨG/ΨSi). These two approaches could efficiently recognize the number of atomic planes in the graphene films (1 ≤ n ≤ 10). The results were compared with atomic force microscopy (AFM) measurement and showed a linear regression with slope of 0.36 ± 0.01 nm/graphene layer. The Two approaches will open a new avenue to efficiently count the number of graphene layers during the preparation process.

  18. Atomic intercalation - a practical method to determine the nanoscale adhesion energy of graphene on HOPG

    NASA Astrophysics Data System (ADS)

    Wang, Jun; Sorescu, Dan; Jeon, Seokmin; Belianinov, Alexei; Kalinin, Sergei; Baddorf, Arthur; Maksymovych, Petro

    A detailed analysis of atomic intercalates in graphite provides a direct estimate of the nanoscale elastic adhesion of a graphene sheet atop highly ordered pyrolytic graphite (HOPG). Atomic intercalation is carried out using conventional ion sputtering, creating ``blisters'' in the top-most layer of the HOPG surface. Scanning tunneling microscopy coupled with image analysis and density functional theory is used to reconstruct the atomic positions and the strain map within the deformed graphene sheet. To estimate the adhesion energy we invoke an analytical model originally devised for macroscopic deformations of graphene. This model yields a value of is 0.221 +/- 0.011 J/m2 for the adhesion energy of graphite, which is in surprisingly good agreement with reported experimental and theoretical values. This implies that mechanical properties of graphene scale at least to lengths of a few nanometers. The simplicity of our method enables analysis of elastic mechanical properties in many two-dimensional layered materials and provides a unique opportunity to investigate the local variability of mechanical properties on the nanoscale. Acknowledgements: Experiments were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility.

  19. Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene

    NASA Astrophysics Data System (ADS)

    Costa, Sara D.; Weis, Johan Ek; Frank, Otakar; Fridrichová, Michaela; Kalbac, Martin

    2016-06-01

    In this report important Raman modes for the evaluation of strain in graphene (the 2D and 2D‧) are analyzed. The isotope labeling is used to disentangle contribution of individual graphene layers of graphene bilayer to the studied Raman modes. It is shown that for Bernal-stacked bilayers, the 2D and the 2D‧ Raman modes have three distinct components that can be assigned to processes originating solely from the top graphene layer, bottom graphene layer, and from a combination of processes originating both from the top and bottom layers. The reported results thus enable addressing the properties of individual graphene layers in graphene bilayer by Raman spectroscopy.

  20. Extremely large magnetoresistance in few-layer graphene/boron–nitride heterostructures

    PubMed Central

    Gopinadhan, Kalon; Shin, Young Jun; Jalil, Rashid; Venkatesan, Thirumalai; Geim, Andre K.; Neto, Antonio H. Castro; Yang, Hyunsoo

    2015-01-01

    Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron–nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen–Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications. PMID:26388149

  1. Few-layer graphene growth from polystyrene as solid carbon source utilizing simple APCVD method

    NASA Astrophysics Data System (ADS)

    Ahmadi, Shahrokh; Afzalzadeh, Reza

    2016-07-01

    This research article presents development of an economical, simple, immune and environment friendly process to grow few-layer graphene by controlling evaporation rate of polystyrene on copper foil as catalyst and substrate utilizing atmospheric pressure chemical vapor deposition (APCVD) method. Evaporation rate of polystyrene depends on molecular structure, amount of used material and temperature. We have found controlling rate of evaporation of polystyrene by controlling the source temperature is easier than controlling the material weight. Atomic force microscopy (AFM) as well as Raman Spectroscopy has been used for characterization of the layers. The frequency of G‧ to G band ratio intensity in some samples varied between 0.8 and 1.6 corresponding to few-layer graphene. Topography characterization by atomic force microscopy confirmed Raman results.

  2. Atomic-Scale Sliding Friction on Graphene in Water.

    PubMed

    Vilhena, J G; Pimentel, Carlos; Pedraz, Patricia; Luo, Feng; Serena, Pedro A; Pina, Carlos M; Gnecco, Enrico; Pérez, Rubén

    2016-04-26

    The sliding of a sharp nanotip on graphene completely immersed in water is investigated by molecular dynamics (MD) and atomic force microscopy. MD simulations predict that the atomic-scale stick-slip is almost identical to that found in ultrahigh vacuum. Furthermore, they show that water plays a purely stochastic role in sliding (solid-to-solid) friction. These observations are substantiated by friction measurements on graphene grown on Cu and Ni, where, oppositely of the operation in air, lattice resolution is readily achieved. Our results promote friction force microscopy in water as a robust alternative to ultra-high-vacuum measurements. PMID:26982997

  3. Observing atomic collapse resonances in artificial nuclei on graphene.

    PubMed

    Wang, Yang; Wong, Dillon; Shytov, Andrey V; Brar, Victor W; Choi, Sangkook; Wu, Qiong; Tsai, Hsin-Zon; Regan, William; Zettl, Alex; Kawakami, Roland K; Louie, Steven G; Levitov, Leonid S; Crommie, Michael F

    2013-05-10

    Relativistic quantum mechanics predicts that when the charge of a superheavy atomic nucleus surpasses a certain threshold, the resulting strong Coulomb field causes an unusual atomic collapse state; this state exhibits an electron wave function component that falls toward the nucleus, as well as a positron component that escapes to infinity. In graphene, where charge carriers behave as massless relativistic particles, it has been predicted that highly charged impurities should exhibit resonances corresponding to these atomic collapse states. We have observed the formation of such resonances around artificial nuclei (clusters of charged calcium dimers) fabricated on gated graphene devices via atomic manipulation with a scanning tunneling microscope. The energy and spatial dependence of the atomic collapse state measured with scanning tunneling microscopy revealed unexpected behavior when occupied by electrons. PMID:23470728

  4. Friedel oscillations at the surfaces of rhombohedral N -layer graphene

    NASA Astrophysics Data System (ADS)

    Dutreix, C.; Katsnelson, M. I.

    2016-01-01

    The low-energy physics of rhombohedral N -layer graphene mainly arises on the external layers, where most of the π electrons are located. Their Bloch band structure defines a two-band semimetal; the dispersion relation scales as ±qN with the momentum norm q in the vicinity of two nonequivalent valleys. In this paper, we address the problem of elastic scattering through a localized impurity located either on the surface of the material or within the bulk, and focus on the quantum interferences it induces on the two external layers. It is apprehended in the framework of a T -matrix approach, both numerically and analytically, regardless of the impurity magnitude, which enables the description of realistic scatters. In rhombohedral multilayer graphene, the impurity induces Friedel oscillations that always decay as 1 /r . As a result, monolayer graphene is the only material of the rhombohedral class that exhibits 1 /r2 -decaying Friedel oscillations. The interference patterns are subsequently analyzed in momentum space. This analysis enables a clear distinction between monolayer graphene and multilayer graphene. It also shows that the interference pattern reveals the whole Bloch band structure, and highlights the number of layers stacked in the material, as well as the π -quantized Berry phases that characterize the existence of nodal points in the semimetallic spectrum. Experimentally, these features may be probed from scanning tunneling microscopy, when imaging the local density of states at the surfaces of suspended rhombohedral N -layer graphene.

  5. Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations

    PubMed Central

    Resta, Andrea; Leoni, Thomas; Barth, Clemens; Ranguis, Alain; Becker, Conrad; Bruhn, Thomas; Vogt, Patrick; Le Lay, Guy

    2013-01-01

    Silicene, the considered equivalent of graphene for silicon, has been recently synthesized on Ag(111) surfaces. Following the tremendous success of graphene, silicene might further widen the horizon of two-dimensional materials with new allotropes artificially created. Due to stronger spin-orbit coupling, lower group symmetry and different chemistry compared to graphene, silicene presents many new interesting features. Here, we focus on very important aspects of silicene layers on Ag(111): First, we present scanning tunneling microscopy (STM) and non-contact Atomic Force Microscopy (nc-AFM) observations of the major structures of single layer and bi-layer silicene in epitaxy with Ag(111). For the (3 × 3) reconstructed first silicene layer nc-AFM represents the same lateral arrangement of silicene atoms as STM and therefore provides a timely experimental confirmation of the current picture of the atomic silicene structure. Furthermore, both nc-AFM and STM give a unifying interpretation of the second layer (√3 × √3)R ± 30° structure. Finally, we give support to the conjectured possible existence of less stable, ~2% stressed, (√7 × √7)R ± 19.1° rotated silicene domains in the first layer. PMID:23928998

  6. Ordered carbon nanotube growth on graphene and few-layer graphene

    NASA Astrophysics Data System (ADS)

    Hunley, D. Patrick; Johnson, Stephen; Stieha, Joseph; Sundararajan, Abhishek; Meacham, Aaron; Strachan, Douglas

    2011-03-01

    Carbon nanotubes are grown on graphene and few-layer graphene films through chemical vapor deposition. The nanotube growth is found to depend on the thickness of the few-layer graphene films. The thinnest films show significant alignment of the nanotubes with the crystallographic axes of the graphene. This alignment is compared to the orientation of the crystallographic etch tracks, permitting the orientation of the nanotubes to be determined. Related nanotube/graphene structures will also be presented and discussed. Supported in part by NSF Award No. DMR-0805136, the Kentucky NSF EPSCoR program, the University of Kentucky Center for Advanced Materials, and the University of Kentucky Center for Nanoscale Science and Engineering.

  7. Formation of graphene layers by vacuum sublimation of silicon carbide using a scanning heat source

    SciTech Connect

    Dmitriev, A. N.; Cherednichenko, D. I.

    2011-12-15

    The kinetics of surface graphitization during dissociative vacuum evaporation of silicon carbide, under the effect of a scanning heat source, is studied. A model of the process is developed. The model provides a means for theoretically treating the dynamics of formation and the number of residual carbon atomic layers. The vapor stoichiometric coefficient which ensures the minimization of the number of structural defects in graphene, is optimized at the sublimation temperature: {theta} = 1/{eta}(T{sub max}). The proposed method can be used as a basis for graphene production technology.

  8. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

    PubMed Central

    Sediri, Haikel; Pierucci, Debora; Hajlaoui, Mahdi; Henck, Hugo; Patriarche, Gilles; Dappe, Yannick J.; Yuan, Sheng; Toury, Bérangère; Belkhou, Rachid; Silly, Mathieu G.; Sirotti, Fausto; Boutchich, Mohamed; Ouerghi, Abdelkarim

    2015-01-01

    Stacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for the cohesion of the multilayer system, give rise to an abrupt interface without interdiffusion between graphene and h-BN, as shown by X-ray Photoemission Spectroscopy (XPS) and direct observation using scanning and High-Resolution Transmission Electron Microscopy (STEM/HRTEM). The electronic properties of graphene, such as the Dirac cone, remain intact and no significant charge transfer i.e. doping, is observed. These results are supported by Density Functional Theory (DFT) calculations. We demonstrate that the h-BN capped graphene allows the fabrication of vdW heterostructures without altering the electronic properties of graphene. PMID:26585245

  9. Advanced atom chips with two metal layers.

    SciTech Connect

    Stevens, James E.; Blain, Matthew Glenn; Benito, Francisco M.; Biedermann, Grant

    2010-12-01

    A design concept, device layout, and monolithic microfabrication processing sequence have been developed for a dual-metal layer atom chip for next-generation positional control of ultracold ensembles of trapped atoms. Atom chips are intriguing systems for precision metrology and quantum information that use ultracold atoms on microfabricated chips. Using magnetic fields generated by current carrying wires, atoms are confined via the Zeeman effect and controllably positioned near optical resonators. Current state-of-the-art atom chips are single-layer or hybrid-integrated multilayer devices with limited flexibility and repeatability. An attractive feature of multi-level metallization is the ability to construct more complicated conductor patterns and thereby realize the complex magnetic potentials necessary for the more precise spatial and temporal control of atoms that is required. Here, we have designed a true, monolithically integrated, planarized, multi-metal-layer atom chip for demonstrating crossed-wire conductor patterns that trap and controllably transport atoms across the chip surface to targets of interest.

  10. Adsorption by design: Tuning atom-graphene van der Waals interactions via mechanical strain

    NASA Astrophysics Data System (ADS)

    Nichols, Nathan S.; Del Maestro, Adrian; Wexler, Carlos; Kotov, Valeri N.

    2016-05-01

    We aim to understand how the van der Waals force between neutral adatoms and a graphene layer is modified by uniaxial strain and electron correlation effects. A detailed analysis is presented for three atoms (He, H, and Na) and graphene strain ranging from weak to moderately strong. We show that the van der Waals potential can be significantly enhanced by strain, and present applications of our results to the problem of elastic scattering of atoms from graphene. In particular, we find that quantum reflection can be significantly suppressed by strain, meaning that dissipative inelastic effects near the surface become of increased importance. Furthermore, we introduce a method to independently estimate the Lennard-Jones parameters used in an effective model of He interacting with graphene, and determine how they depend on strain. At short distances, we find that strain tends to reduce the interaction strength by pushing the location of the adsorption potential minima to higher distances above the deformed graphene sheet. This opens up the exciting possibility of mechanically engineering an adsorption potential, with implications for the formation and observation of anisotropic low-dimensional superfluid phases.

  11. Chemical gating of epitaxial graphene through ultrathin oxide layers.

    PubMed

    Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

    2015-08-01

    We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal. PMID:26148485

  12. Direct visualization of atomically precise nitrogen-doped graphene nanoribbons

    SciTech Connect

    Zhang, Yi; Zhang, Yanfang; Li, Geng; Lu, Jianchen; Du, Shixuan E-mail: feng@mpip-mainz.mpg.de; Gao, Hong-Jun; Lin, Xiao; Berger, Reinhard; Feng, Xinliang E-mail: feng@mpip-mainz.mpg.de; Müllen, Klaus

    2014-07-14

    We have fabricated atomically precise nitrogen-doped chevron-type graphene nanoribbons by using the on-surface synthesis technique combined with the nitrogen substitution of the precursors. Scanning tunneling microscopy and spectroscopy indicate that the well-defined nanoribbons tend to align with the neighbors side-by-side with a band gap of 1.02 eV, which is in good agreement with the density functional theory calculation result. The influence of the high precursor coverage on the quality of the nanoribbons is also studied. We find that graphene nanoribbons with sufficient aspect ratios can only be fabricated at sub-monolayer precursor coverage. This work provides a way to construct atomically precise nitrogen-doped graphene nanoribbons.

  13. Absence of a stable atomic structure in fluorinated graphene.

    PubMed

    Boukhvalov, Danil W

    2016-05-21

    Based on the results of first-principles calculations we demonstrate that significant distortion of graphene sheets caused by adsorption of fluorine atoms leads to the formation of metastable patterns for which the next step of fluorination is considerably less energetically favorable. Existence of these stable patterns oriented along the armchair direction makes possible the synthesis of various CFx structures. The combination of strong distortion of the nonfluorinated graphene sheet with the doping caused by the polar nature of C-F bonds reduces the energy cost of migration and the energy of migration barriers, making possible the migration of fluorine atoms on the graphene surface as well as transformation of the shapes of fluorinated areas. The decreasing energy cost of migration with increasing fluorine content also leads to increasing numbers of single fluorine adatoms, which could be the source of magnetic moments. PMID:27116897

  14. Single-layer graphene on silicon nitride micromembrane resonators

    SciTech Connect

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja; Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S.; Taylor, Jacob M.; Marcus, Charles M.; Cheol Shin, Yong; Kong, Jing

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  15. Molecular Layer-seeded Ultra-thin Top-gate Dielectrics for High Transconductance Graphene Transistors

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Karmel, Hunter; Alaboson, Justice; Lauhon, Lincoln; Marks, Tobin; Hersam, Mark

    2012-02-01

    The potential of graphene in integrated analog and digital circuits can only be fully realized through incorporation of ultra-thin gate dielectrics to enable large-scale small-channel graphene field-effect transistors (GFETs). Atomic-layer deposition (ALD) is a viable technique to fabricate gate-dielectrics, however, it requires a seeding layer on otherwise inert graphene. Here, we demonstrate a single molecule thick perylene-3,4,9,10-tetracarboxylic dianhydride overlayer as an effective seeding layer to grow high-κ Al2O3 on mechanically exfoliated graphene for high-performance GFETs. Using an ultra-thin (< 1nm) seeding layer, in contrast to polymer films (5-10 nm), we demonstrate fabrication of the thinnest ALD-grown gate-dielectric (4 nm) reported to date in top-gated GFETs. This yields high performance GFETs with the intrinsic transconductance parameter approaching 2.4 mS and the field-effect mobility ˜3000 cm^2/Vs. We also demonstrate generalization of this molecular layer seeded-ALD growth method to higher- κ gate dielectrics, yielding further enhanced GFET transconductance for possible application to radio-frequency circuits.

  16. Nonlocal thermal transport across embedded few-layer graphene sheets

    DOE PAGESBeta

    Liu, Ying; Huxtable, Scott T.; Yang, Bao; Sumpter, Bobby G.; Qiao, Rui

    2014-11-13

    Thermal transport across the interfaces between few-layer graphene sheets and soft materials exhibits intriguing anomalies when interpreted using the classical Kapitza model, e.g., the conductance of the same interface differs greatly for different modes of interfacial thermal transport. Using atomistic simulations, we show that such thermal transport follows a nonlocal flux-temperature drop constitutive law and is characterized jointly by a quasi-local conductance and a nonlocal conductance instead of the classical Kapitza conductance. Lastly, the nonlocal model enables rationalization of many anomalies of the thermal transport across embedded few-layer graphene sheets and should be used in studies of interfacial thermal transportmore » involving few-layer graphene sheets or other ultra-thin layered materials.« less

  17. Nonlocal thermal transport across embedded few-layer graphene sheets

    SciTech Connect

    Liu, Ying; Huxtable, Scott T.; Yang, Bao; Sumpter, Bobby G.; Qiao, Rui

    2014-11-13

    Thermal transport across the interfaces between few-layer graphene sheets and soft materials exhibits intriguing anomalies when interpreted using the classical Kapitza model, e.g., the conductance of the same interface differs greatly for different modes of interfacial thermal transport. Using atomistic simulations, we show that such thermal transport follows a nonlocal flux-temperature drop constitutive law and is characterized jointly by a quasi-local conductance and a nonlocal conductance instead of the classical Kapitza conductance. Lastly, the nonlocal model enables rationalization of many anomalies of the thermal transport across embedded few-layer graphene sheets and should be used in studies of interfacial thermal transport involving few-layer graphene sheets or other ultra-thin layered materials.

  18. Imaging Stacking Order in Few-Layer Graphene

    SciTech Connect

    C Lui; Z Li; Z Chen; P Klimov; L Brus; T Heinz

    2011-12-31

    Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the material's electronic properties. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetralayer graphene. We find that 15% of exfoliated graphene tri- and tetralayers is composed of micrometer-sized domains of rhombohedral stacking, rather than of usual Bernal stacking. These domains are stable and remain unchanged for temperatures exceeding 800 C.

  19. Metal-doped graphene layers composed with boron nitride-graphene as an insulator: a nano-capacitor.

    PubMed

    Monajjemi, Majid

    2014-11-01

    A model of a nanoscale dielectric capacitor composed of a few dopants has been investigated in this study. This capacitor includes metallic graphene layers which are separated by an insulating medium containing a few h-BN layers. It has been observed that the elements from group IIIA of the periodic table are more suitable as dopants for hetero-structures of the {metallic graphene/hBN/metallic graphene} capacitors compared to those from groups IA or IIA. In this study, we have specifically focused on the dielectric properties of different graphene/h-BN/graphene including their hetero-structure counterparts, i.e., Boron-graphene/h-BN/Boron-graphene, Al-graphene/h-BN/Al-graphene, Mg-graphene/h-BN/Mg-graphene, and Be-graphene/h-BN/Be-graphene stacks for monolayer form of dielectrics. Moreover, we studied the multi dielectric properties of different (h-BN)n/graphene hetero-structures of Boron-graphene/(h-BN)n/Boron-graphene. PMID:25359456

  20. PREFACE: Ultrathin layers of graphene, h-BN and other honeycomb structures Ultrathin layers of graphene, h-BN and other honeycomb structures

    NASA Astrophysics Data System (ADS)

    Geber, Thomas; Oshima, Chuhei

    2012-08-01

    Since ancient times, pure carbon materials have been familiar in human society—not only diamonds in jewellery and graphite in pencils, but also charcoal and coal which have been used for centuries as fuel for living and industry. Carbon fibers are stronger, tougher and lighter than steel and increase material efficiency because of their lower weight. Today, carbon fibers and related composite materials are used to make the frames of bicycles, cars and even airplane parts. The two-dimensional allotrope, now called graphene, is just a single layer of carbon atoms, locked together in a strongly bonded honeycomb lattice. In plane, graphene is stiffer than diamond, but out-of-plane it is soft, like rubber. It is virtually invisible, may conduct electricity (heat) better than copper and weighs next to nothing. Carbon compounds with two carbon atoms as a base, such as graphene, graphite or diamond, have isoelectronic sister compounds made of boron-nitrogen pairs: hexagonal and cubic boron nitride, with almost the same lattice constant. Although the two 2D sisters, graphene and h-BN, have the same number of valence electrons, their electronic properties are very different: freestanding h-BN is an insulator, while charge carriers in graphene are highly mobile. The past ten years have seen a great expansion in studies of single-layer and few-layer graphene. This activity has been concerned with the π electron transport in graphene, in electric and magnetic fields. More than 30 years ago, however, single-layer graphene and h-BN on solid surfaces were widely investigated. It was noted that they drastically changed the chemical reactivity of surfaces, and they were known to 'poison' heterogeneous catalysts, to passivate surfaces, to prevent oxidation of surfaces and to act as surfactants. Also, it was realized that the controlled growth of h-BN and graphene on substrates yields the formation of mismatch driven superstructures with peculiar template functionality on the

  1. Compression behavior of single-layer graphenes.

    PubMed

    Frank, Otakar; Tsoukleri, Georgia; Parthenios, John; Papagelis, Konstantinos; Riaz, Ibtsam; Jalil, Rashid; Novoselov, Kostya S; Galiotis, Costas

    2010-06-22

    Central to most applications involving monolayer graphenes is its mechanical response under various stress states. To date most of the work reported is of theoretical nature and refers to tension and compression loading of model graphenes. Most of the experimental work is indeed limited to the bending of single flakes in air and the stretching of flakes up to typically approximately 1% using plastic substrates. Recently we have shown that by employing a cantilever beam we can subject single graphenes to various degrees of axial compression. Here we extend this work much further by measuring in detail both stress uptake and compression buckling strain in single flakes of different geometries. In all cases the mechanical response is monitored by simultaneous Raman measurements through the shift of either the G or 2D phonons of graphene. Despite the infinitely small thickness of the monolayers, the results show that graphenes embedded in plastic beams exhibit remarkable compression buckling strains. For large length (l)-to-width (w) ratios (> or =0.2) the buckling strain is of the order of -0.5% to -0.6%. However, for l/w < 0.2 no failure is observed for strains even higher than -1%. Calculations based on classical Euler analysis show that the buckling strain enhancement provided by the polymer lateral support is more than 6 orders of magnitude compared to that of suspended graphene in air. PMID:20496881

  2. Significantly reduced thermal diffusivity of free-standing two-layer graphene in graphene foam.

    PubMed

    Lin, Huan; Xu, Shen; Wang, Xinwei; Mei, Ning

    2013-10-18

    We report on a thermal diffusivity study of suspended graphene foam (GF) using the transient electro-thermal technique. Our Raman study confirms the GF is composed of two-layer graphene. By measuring GF of different lengths, we are able to exclude the radiation effect. Using Schuetz's model, the intrinsic thermal diffusivity of the free-standing two-layer graphene is determined with a high accuracy without using knowledge of the porosity of the GF. The intrinsic thermal diffusivity of the two-layer graphene is determined at 1.16-2.22 × 10(-4) m(2) s(-1). The corresponding intrinsic thermal conductivity is 182-349 W m(-1) K(-1), about one order of magnitude lower than those reported for single-layer graphene. Extensive surface impurity defects, wrinkles and rough edges are observed under a scanning electron microscope for the studied GF. These structural defects induce substantial phonon scattering and explain the observed significant thermal conductivity reduction. Our thermal diffusivity characterization of GF provides an advanced way to look into the thermal transport capacity of free-standing graphene with high accuracy and ease of experimental implementation. PMID:24060813

  3. Growth of Single-Layer Graphene on Pt(111) by Thermal Decomposition of Propylene

    NASA Astrophysics Data System (ADS)

    Hodges, Gregory; Geisler, Heike; Ventrice, Carl

    2009-10-01

    Graphene, which is a one-atom-thick layer of sp^2-bonded carbon, has sparked keen interest within the scientific community because it is predicted to have a wide range of unique properties. In particular, it has one of the highest known mobilities of all the semiconducting materials. Since its discovery in 2004, there have been several studies of the growth of graphene by various techniques. We have performed studies on the growth of graphene on the catalytically active Pt(111) surface by thermal decomposition of propylene in an ultra-high vacuum (UHV) chamber. Two methods have been used: deposition of a monolayer of propylene followed by annealing in UHV and growth of graphene in an atmosphere of 10-6 Torr of propylene at 500 ^oC. The crystal structure of the graphene films was monitored using low energy electron diffraction (LEED). In addition, we are currently performing high resolution electron energy loss spectroscopy (HREELS) measurements of the electronic structure of the graphene films.

  4. Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

    PubMed Central

    Drost, Robert; Kezilebieke, Shawulienu; M. Ervasti, Mikko; Hämäläinen, Sampsa K.; Schulz, Fabian; Harju, Ari; Liljeroth, Peter

    2015-01-01

    The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other. PMID:26584674

  5. Self-regulating homogenous growth of high-quality graphene on Co-Cu composite substrate for layer control

    NASA Astrophysics Data System (ADS)

    Lin, Tianquan; Huang, Fuqiang; Wan, Dongyun; Bi, Hui; Xie, Xiaoming; Jiang, Mianheng

    2013-06-01

    The composite substrate of Co and Cu was proposed to grow homogenous high quality wafer-size graphene films by an atmosphere pressure CVD method. The composite substrate consists of a moderate-carbon-solubility metal top (Co coating) as a C-dissolving layer and a low-carbon-solubility metal base (Cu foil) as a C-rejecting layer. During the CVD process, the interdiffusion of Co and Cu atoms occurs in the composite. With the dynamic control on Co and Cu alloying process to affect the carbon solubility, active carbon atoms captured by the Co layer were segregated to form spontaneously a high-quality graphene film on the top of Cu-Co substrate. The tunable layer-number of the graphene films can be precisely controlled by adjusting the thickness of the Co layer. High quality single-layered graphene films with a 98% yield were prepared on an 80 nm-Co-coated Cu foil and insensitive to growth temperature and time. More importantly, this type of composite substrate has also been developed to grow AB-stacked bilayers and three-layer graphene with 99% surface coverage and absence of defects. The approach is opening up a new avenue for high-quality graphene production with precise layer control through composite substrate design.The composite substrate of Co and Cu was proposed to grow homogenous high quality wafer-size graphene films by an atmosphere pressure CVD method. The composite substrate consists of a moderate-carbon-solubility metal top (Co coating) as a C-dissolving layer and a low-carbon-solubility metal base (Cu foil) as a C-rejecting layer. During the CVD process, the interdiffusion of Co and Cu atoms occurs in the composite. With the dynamic control on Co and Cu alloying process to affect the carbon solubility, active carbon atoms captured by the Co layer were segregated to form spontaneously a high-quality graphene film on the top of Cu-Co substrate. The tunable layer-number of the graphene films can be precisely controlled by adjusting the thickness of the Co

  6. Graphene-enhanced Raman spectroscopy of thymine adsorbed on single-layer graphene

    NASA Astrophysics Data System (ADS)

    Fesenko, Olena; Dovbeshko, Galyna; Dementjev, Andrej; Karpicz, Renata; Kaplas, Tommi; Svirko, Yuri

    2015-04-01

    Graphene-enhanced Raman scattering (GERS) spectra and coherent anti-Stokes Raman scattering (CARS) of thymine molecules adsorbed on a single-layer graphene were studied. The enhancement factor was shown to depend on the molecular groups of thymine. In the GERS spectra of thymine, the main bands are shifted with respect to those for molecules adsorbed on a glass surface, indicating charge transfer for thymine on graphene. The probable mechanism of the GERS enhancement is discussed. CARS spectra are in accord with the GERS results, which indicates similar benefit from the chemical enhancement.

  7. Broadband single-layered graphene absorber using periodic arrays of graphene ribbons with gradient width

    NASA Astrophysics Data System (ADS)

    Zhihong, Zhu; Chucai, Guo; Jianfa, Zhang; Ken, Liu; Xiaodong, Yuan; Shiqiao, Qin

    2015-01-01

    We demonstrate that a broadband single-layered graphene absorber can be obtained in the THz range using periodic arrays of chemically doped graphene ribbons with gradient width, supported on a dielectric film placed on a thick piece of metal. The working bandwidth of 90% absorption for this structure is as high as 1.3 THz with a central frequency of 3 THz. The broadband operation mechanism is a result of the varying continuous plasmon resonances occurring in graphene ribbons with gradient width. The operation wavelength can be expanded to the far-infrared range.

  8. Layer Number Dependence of Li(+) Intercalation on Few-Layer Graphene and Electrochemical Imaging of Its Solid-Electrolyte Interphase Evolution.

    PubMed

    Hui, Jingshu; Burgess, Mark; Zhang, Jiarui; Rodríguez-López, Joaquín

    2016-04-26

    A fundamental question facing electrodes made out of few layers of graphene (FLG) is if they display chemical properties that are different to their bulk graphite counterpart. Here, we show evidence that suggests that lithium ion intercalation on FLG, as measured via stationary voltammetry, shows a strong dependence on the number of layers of graphene that compose the electrode. Despite its extreme thinness and turbostratic structure, Li ion intercalation into FLG still proceeds through a staging process, albeit with different signatures than bulk graphite or multilayer graphene. Single-layer graphene does not show any evidence of ion intercalation, while FLG with four graphene layers displays limited staging peaks, which broaden and increase in number as the layer number increases to six. Despite these mechanistic differences on ion intercalation, the formation of a solid-electrolyte interphase (SEI) was observed on all electrodes. Scanning electrochemical microscopy (SECM) in the feedback mode was used to demonstrate changes in the surface conductivity of FLG during SEI evolution. Observation of ion intercalation on large area FLG was conditioned to the fabrication of "ionic channels" on the electrode. SECM measurements using a recently developed Li-ion sensitive imaging technique evidenced the role of these channels in enabling Li-ion intercalation through localized flux measurements. This work highlights the impact of nanostructure and microstructure on macroscopic electrochemical behavior and provides guidance to the mechanistic control of ion intercalation using graphene, an atomically thin interface where surface and bulk reactivity converge. PMID:26943950

  9. Synthesis of metal-incorporated graphitic microporous carbon terminated with highly-ordered graphene walls—Controlling the number of graphene layers by ambient-temperature metal sputtering

    NASA Astrophysics Data System (ADS)

    Banerjee, Arghya Narayan; Min, Bong-Ki; Joo, Sang Woo

    2013-03-01

    Metal-incorporated, graphitic microporous carbon, containing highly ordered graphene layers, has been converted from highly thin amorphous carbon film by a metal nanoparticle sputtering process at ambient substrate temperature. A standard direct-current magnetron sputtering system is used in this purpose. The process consists of a dual effect of activation and graphitization of amorphous carbon to graphitic microporous carbon. The sputtering plasma, containing energetic ions and sub-atomic particles, act as dry-etchant to activate the a:C film to transform it into microporous carbon. Whereas, the inelastic 'knock-on' collision between metal nanoparticles/ions and the nuclei of C atoms manifests the atom displacement and re-arrangement into ordered structure to form graphitic domains within the microporous carbon network. The average number of graphene layer formation has been controlled by adjusting the sputtering voltage and current, as the carbon atom displacement rate is dependent on the irradiation current density. Raman spectroscopy and scanning transmission electron microscopy confirms the high controllability of the number of graphene layer formation as a function of sputtering parameters. The method is simple, cost-effective and compatible with modern solid-state device fabrication processing, as it comprises vacuum-based physical vapor deposition techniques, and also, can be adopted easily for transitional metal incorporation into graphene and other carbon nanostructures for potential hydrogen storage and related clean energy applications.

  10. Fingerprints of Multiple Electron Scatterings in Single-Layer Graphene

    NASA Astrophysics Data System (ADS)

    Jung, Minbok; Sohn, So-Dam; Park, Jonghyun; Lee, Keun-U.; Shin, Hyung-Joon

    2016-03-01

    The electrons in graphene exhibit unusual behaviours, which can be described by massless Dirac quasiparticles. Understanding electron scattering in graphene has been of significant importance for its future application in electronic devices because electron scattering determines electrical properties such as resistivity and electron transport. There are two types of electron scatterings in graphene: intervalley scattering and intravalley scattering. In single-layer graphene, to date, it has been difficult to observe intravalley scattering because of the suppression of backscattering resulting from the chiral nature of the electrons in graphene. Here, we report the multiple electron scattering behaviours in single-layer graphene on a metallic substrate. By applying one- and two-dimensional Fourier transforms to maps of the local density of states, we can distinguish individual scattering processes from complex interference patterns. These techniques enable us to provide direct evidence of intravalley scattering, revealing a linear dispersion relation with a Fermi velocity of ~7.4 × 105 m/s.