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Sample records for atomized uranium silicide

  1. Status of the atomized uranium silicide fuel development at KAERI

    SciTech Connect

    Kim, C.K.; Kim, K.H.; Park, H.D.; Kuk, I.H.

    1997-08-01

    While developing KMRR fuel fabrication technology an atomizing technique has been applied in order to eliminate the difficulties relating to the tough property of U{sub 3}Si and to take advantage of the rapid solidification effect of atomization. The comparison between the conventionally comminuted powder dispersion fuel and the atomized powder dispersion fuel has been made. As the result, the processes, uranium silicide powdering and heat treatment for U{sub 3}Si transformation, become simplified. The workability, the thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be improved due to the spherical shape of atomized powder. In this presentation the overall developments of atomized U{sub 3}Si dispersion fuel and the planned activities for applying the atomizing technique to the real fuel fabrication are described.

  2. Production of Mo-99 using low-enriched uranium silicide

    SciTech Connect

    Hutter, J. C.; Srinivasan, B.; Vicek, M.; Vandegrift, G. F.

    1994-09-01

    Over the last several years, uranium silicide fuels have been under development as low-enriched uranium (LEU) targets for Mo-99. The use of LEU silicide is aimed at replacing the UAl{sub x} alloy in the highly-enriched uranium dissolution process. A process to recover Mo-99 from low-enriched uranium silicide is being developed at Argonne National Laboratory. The uranium silicide is dissolved in alkaline hydrogen peroxide. Experiments performed to determine the optimum dissolution procedure are discussed, and the results of dissolving a portion of a high-burnup (>40%) U{sub 3}Si{sub 2} miniplate are presented. Future work related to Mo-99 separation and waste disposal are also discussed.

  3. Preliminary investigations on the use of uranium silicide targets for fission Mo-99 production

    SciTech Connect

    Cols, H.; Cristini, P.; Marques, R.

    1997-08-01

    The National Atomic Energy Commission (CNEA) of Argentine Republic owns and operates an installation for production of molybdenum-99 from fission products since 1985, and, since 1991, covers the whole national demand of this nuclide, carrying out a program of weekly productions, achieving an average activity of 13 terabecquerel per week. At present they are finishing an enlargement of the production plant that will allow an increase in the volume of production to about one hundred of terabecquerel. Irradiation targets are uranium/aluminium alloy with 90% enriched uranium with aluminium cladding. In view of international trends held at present for replacing high enrichment uranium (HEU) for enrichment values lower than 20 % (LEU), since 1990 the authors are in contact with the RERTR program, beginning with tests to adapt their separation process to new irradiation target conditions. Uranium silicide (U{sub 3}Si{sub 2}) was chosen as the testing material, because it has an uranium mass per volume unit, so that it allows to reduce enrichment to a value of 20%. CNEA has the technology for manufacturing miniplates of uranium silicide for their purposes. In this way, equivalent amounts of Molybdenum-99 could be obtained with no substantial changes in target parameters and irradiation conditions established for the current process with Al/U alloy. This paper shows results achieved on the use of this new target.

  4. Atomic size effects studied by transport in single silicide nanowires

    NASA Astrophysics Data System (ADS)

    Miccoli, I.; Edler, F.; Pfnür, H.; Appelfeller, S.; Dähne, M.; Holtgrewe, K.; Sanna, S.; Schmidt, W. G.; Tegenkamp, C.

    2016-03-01

    Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown, e.g., by deposition of rare earth elements on semiconducting surfaces. These wires play a pivotal role in fundamental research and open intriguing perspectives for CMOS applications. However, the electronic properties of these one-dimensional systems are extremely sensitive to atomic-sized defects, which easily alter the transport characteristics. In this study, we characterized comprehensively TbSi2 wires grown on Si(100) and correlated details of the atomic structure with their electrical resistivities. Scanning tunneling microscopy (STM) as well as all transport experiments were performed in situ using a four-tip STM system. The measurements are complemented by local spectroscopy and density functional theory revealing that the silicide wires are electronically decoupled from the Si template. On the basis of a quasiclassical transport model, the size effect found for the resistivity is quantitatively explained in terms of bulk and surface transport channels considering details of atomic-scale roughness. Regarding future applications the full wealth of these robust nanostructures will emerge only if wires with truly atomically sharp interfaces can be reliably grown.

  5. Thermal Analysis of a Uranium Silicide Miniplate Irradiation Experiment

    SciTech Connect

    Donna Post Guillen

    2009-09-01

    This paper outlines the thermal analysis for the irradiation of high density uranium-silicide (U3Si2 dispersed in an aluminum matrix and clad in aluminum) booster fuel for a Boosted Fast Flux Loop designed to provide fast neutron flux test capability in the ATR. The purpose of this experiment (designated as Gas Test Loop-1 [GTL-1]) is two-fold: (1) to assess the adequacy of the U3Si2/Al dispersion fuel and the aluminum alloy 6061 cladding, and (2) to verify stability of the fuel cladding boehmite pre-treatment at nominal power levels in the 430 to 615 W/cm2 (2.63 to 3.76 Btu/s•in2) range. The GTL-1 experiment relies on a difficult balance between achieving a high heat flux, yet keeping fuel centerline temperature below a specified maximum value throughout an entire operating cycle of the reactor. A detailed finite element model was constructed to calculate temperatures and heat flux levels and to reveal which experiment parameters place constraints on reactor operations. Analyses were performed to determine the bounding lobe power level at which the experiment could be safely irradiated, yet still provide meaningful data under nominal operating conditions. Then, simulations were conducted for nominal and bounding lobe power levels under steady-state and transient conditions with the experiment in the reactor. Reactivity changes due to a loss of commercial power with pump coast-down to emergency flow or a standard in-pile tube pump discharge break were evaluated. The time after shutdown for which the experiment can be adequately cooled by natural convection cooling was determined using a system thermal hydraulic model. An analysis was performed to establish the required in-reactor cooling time prior to removal of the experiment from the reactor. The inclusion of machining tolerances in the numerical model has a large effect on heat transfer.

  6. Neutron irradiated uranium silicides studied by neutron diffraction and Rietveld analysis

    SciTech Connect

    Birtcher, R.C.; Mueller, M.H.; Richardson, J.W. Jr.

    1990-11-01

    The irradiation behavior of high-density uranium silicides has been a matter of interest to the nuclear industry for use in high power or low enrichment applications. Transmission electron microscopy studies have found that heavy ion bombardment renders U{sub 3}Si and U{sub 3}Si{sub 2} amorphous at temperatures below about 250 C and that U{sub 3}Si becomes mechanically unstable suffering rapid growth by plastic flow. In this present work, crystallographic changes preceding amorphization by fission fragment damage have been studied by high-resolution neutron diffraction as a function of damage produced by uranium fission at room temperature. Initially, both silicides had tetragonal crystal structures. Crystallographic and amorphous phases were studied simultaneously by combining conventional Rietveld refinement of the crystallographic phases with Fourier-filtering analysis of the non-crystalline scattering component. 13 refs., 5 figs.

  7. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    SciTech Connect

    Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

    2015-06-21

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.

  8. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    DOE PAGESBeta

    Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

    2015-06-21

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinationsmore » that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.« less

  9. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    NASA Astrophysics Data System (ADS)

    Harp, Jason M.; Lessing, Paul A.; Hoggan, Rita E.

    2015-11-01

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ± 0.06 g/cm3. Additional characterization of the pellets by scanning electron microscopy and X-ray diffraction has also been performed. Pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.

  10. Calculating Atomic Number Densities for Uranium

    Energy Science and Technology Software Center (ESTSC)

    1993-01-01

    Provides method to calculate atomic number densities of selected uranium compounds and hydrogenous moderators for use in nuclear criticality safety analyses at gaseous diffusion uranium enrichment facilities.

  11. Reprocessing RERTR silicide fuels

    SciTech Connect

    Rodrigues, G.C.; Gouge, A.P.

    1983-05-01

    The Reduced Enrichment Research and Test Reactor Program is one element of the United States Government's nonproliferation effort. High-density, low-enrichment, aluminum-clad uranium silicide fuels may be substituted for the highly enriched aluminum-clad alloy fuels now in use. Savannah River Laboratory has performed studies which demonstrate reprocessability of spent RERTR silicide fuels at Savannah River Plant. Results of dissolution and feed preparation tests and solvent extraction processing demonstrations with both unirradiated and irradiated uranium silicide fuels are presented.

  12. Method for producing uranium atomic beam source

    DOEpatents

    Krikorian, Oscar H.

    1976-06-15

    A method for producing a beam of neutral uranium atoms is obtained by vaporizing uranium from a compound UM.sub.x heated to produce U vapor from an M boat or from some other suitable refractory container such as a tungsten boat, where M is a metal whose vapor pressure is negligible compared to that of uranium at the vaporization temperature. The compound, for example, may be the uranium-rhenium compound, URe.sub.2. An evaporation rate in excess of about 10 times that of conventional uranium beam sources is produced.

  13. Effective charge on silicon atom in the metal silicides Mg{sub 2}Si and CaSi

    SciTech Connect

    Ishii, Hideshi; Karimov, Pavel; Kawai, Jun; Matsuo, Shuji; Tanaka, Koki

    2005-05-15

    The effective charges of Si in both magnesium (Mg{sub 2}Si) and calcium silicides (CaSi and Ca{sub 2}Si) have been investigated by measuring high-resolution Si K{alpha} x-ray fluorescence spectra. CaSi showed small but positive chemical shifts (+0.03 eV), while the chemical shift of Mg{sub 2}Si was negative (-0.14 eV), as expected from their electronegativity (Ca: 1.00; Mg: 1.31; Si: 1.90). The similarity of the chemical shift for the Fe silicides and the calculations for the free single Si atom suggested that the effective charge of Si for CaSi was positive. From the observations the effective charges on Si in CaSi and Mg{sub 2}Si were estimated to be +0.1 and -0.3 electrons. The discrete variation Hatree-Fock-Slater calculations for Mg{sub 2}Si and CaSi also showed opposite chemical shifts and effective charges: -0.09 eV and -0.35 electrons for Mg{sub 2}Si and +0.09 eV and +0.26 electrons for CaSi, respectively. The composition of the nearest-neighbor atoms of Si, which are Si in CaSi and Mg in Mg{sub 2}Si, cause the opposite effective charges between the two silicides.

  14. Ceramic-silicide composites

    SciTech Connect

    Petrovic, J.J.

    1998-12-01

    The area of ceramic-silicide composites represents a merging of structural ceramics and structural silicides. Such ceramic-silicide composites can possess the desirable characteristics of both classes of compounds. Important structural ceramics are materials such as Si{sub 3}N{sub 4}, SiC, Al{sub 2}O{sub 3}, and ZrO{sub 2}, which possess covalent, ionic, or mixed covalent-ionic atomic bonding. An important structural silicide is MoSi{sub 2}, which possesses mixed covalent-metallic bonding. The arena of ceramic-silicide composites encompasses both composites where the structural silicide is the matrix and the structural ceramic is the reinforcement, and composites where the structural ceramic is the matrix and the structural silicide is the reinforcement. In the former area, MoSi{sub 2}-SiC, MoSi{sub 2}-ZrO{sub 2}, and MoSi{sub 2}-Al{sub 2}O{sub 3} composites are discussed. In the latter area, Si{sub 3}N{sub 4}-MoSi{sub 2} composites are described.

  15. Interaction transfer of silicon atoms forming Co silicide for Co/√(3)×√(3)R30°-Ag/Si(111) and related magnetic properties

    SciTech Connect

    Chang, Cheng-Hsun-Tony; Fu, Tsu-Yi; Tsay, Jyh-Shen

    2015-05-07

    Combined scanning tunneling microscopy, Auger electron spectroscopy, and surface magneto-optic Kerr effect studies were employed to study the microscopic structures and magnetic properties for ultrathin Co/√(3)×√(3)R30°-Ag/Si(111). As the annealing temperature increases, the upward diffusion of Si atoms and formation of Co silicides occurs at temperature above 400 K. Below 600 K, the √(3)×√(3)R30°-Ag/Si(111) surface structure persists. We propose an interaction transferring mechanism of Si atoms across the √(3)×√(3)R30°-Ag layer. The upward transferred Si atoms react with Co atoms to form Co silicide. The step height across the edge of the island, a separation of 0.75 nm from the analysis of the 2 × 2 structure, and the calculations of the normalized Auger signal serve as strong evidences for the formation of CoSi{sub 2} at the interface. The interaction transferring mechanism for Si atoms enhances the possibility of interactions between Co and Si atoms. The smoothness of the surface is advantage for that the easy axis of magnetization for Co/√(3)×√(3)R30°-Ag/Si(111) is in the surface plane. This provides a possible way of growing flat magnetic layers on silicon substrate with controllable silicide formation and shows potential applications in spintronics devices.

  16. Safety evaluation report related to the evaluation of low-enriched uranium silicide-aluminum dispersion fuel for use in non-power reactors

    SciTech Connect

    Not Available

    1988-07-01

    Low-enriched uranium silicide-aluminum dispersion plate-type fuels have been extensively researched and developed under the international program, Reduced Enrichment in Research and Test Reactors. The international effort was led by Argonne National Laboratory (ANL) in the United States. This evaluation is based primarily on reports issued by ANL that discuss and summarize the developmental tests and experiments, including postirradiation examinations, of both miniature and full-sized plates of prototypical fuel compositions. This evaluation concludes that plate-type fuels suitable and acceptable for use in research and test reactors can be fabricated with U/sub 3/Si/sub 2/-Al dispersion compacts with uranium densities up to 4.8 g/cm/sup 3/. 4 refs., 1 fig.

  17. Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters

    SciTech Connect

    Okada, Naoya; Uchida, Noriyuki; Kanayama, Toshihiko

    2015-03-07

    We investigated the electrical properties and derived the energy band structures of amorphous Si-rich W silicide (a-WSi{sub n}) films and approximately 1-nm-thick crystalline WSi{sub n} epitaxial films (e-WSi{sub n}) on Si (100) substrates with composition n = 8–10, both composed of Si{sub n} clusters each of which encapsulates a W atom (WSi{sub n} clusters). The effect of annealing in the temperature range of 300–500 °C was also investigated. The Hall measurements at room temperature revealed that a-WSi{sub n} is a nearly intrinsic semiconductor, whereas e-WSi{sub n} is an n-type semiconductor with electron mobility of ∼8 cm{sup 2}/V s and high sheet electron density of ∼7 × 10{sup 12 }cm{sup −2}. According to the temperature dependence of the electrical properties, a-WSi{sub n} has a mobility gap of ∼0.1 eV and mid gap states in the region of 10{sup 19 }cm{sup −3} eV{sup −1} in an optical gap of ∼0.6 eV with considerable band tail states; e-WSi{sub n} has a donor level of ∼0.1 eV with sheet density in the region of 10{sup 12 }cm{sup −2} in a band gap of ∼0.3 eV. These semiconducting band structures are primarily attributed to the open band-gap properties of the constituting WSi{sub n} cluster. In a-WSi{sub n}, the random network of the clusters generates the band tail states, and the formation of Si dangling bonds results in the generation of mid gap states; in e-WSi{sub n}, the original cluster structure is highly distorted to accommodate the Si lattice, resulting in the formation of intrinsic defects responsible for the donor level.

  18. An atomic model for neutral and singly ionized uranium

    NASA Technical Reports Server (NTRS)

    Maceda, E. L.; Miley, G. H.

    1979-01-01

    A model for the atomic levels above ground state in neutral, U(0), and singly ionized, U(+), uranium is described based on identified atomic transitions. Some 168 states in U(0) and 95 in U(+) are found. A total of 1581 atomic transitions are used to complete this process. Also discussed are the atomic inverse lifetimes and line widths for the radiative transitions as well as the electron collisional cross sections.

  19. Laser-excited fluorescence spectra of atomic uranium

    SciTech Connect

    Wang Songyue; Jin Changtai; Shen Mingtao; Wang Xiulan

    1987-05-01

    Using a dc-supply hollow-cathode lamp as a source of uranium vapor and a rhodamine 6G dye laser to excite the vapor optically, it was simple and convenient to detect fluorescence from uranium atoms at 753.393, 763.175, and 763.954 nm. We give a detailed discussion of how we eliminated the intense background emissions, which were principally due to the lamp.

  20. Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation

    SciTech Connect

    Liu, Hailong; She, Guangwei; Mu, Lixuan; Shi, Wensheng

    2012-12-15

    Graphical abstract: Display Omitted Highlight: ► Nickel silicides nanowire arrays prepared by a simple in situ silicidation method. ► Phases of nickel silicides could be varied by tuning the reaction temperature. ► A growth model was proposed for the nickel silicides nanowires. ► Diffusion rates of Ni and Si play a critical role for the phase variation. -- Abstract: In this paper, we report an in situ silicidizing method to prepare nickel silicide nanowire arrays with varied structures and phases. The in situ reaction (silicidation) between Si and NiCl{sub 2} led to conversion of Si nanowires to nickel silicide nanowires. Structures and phases of the obtained nickel silicides could be varied by changing the reaction temperature. At a relatively lower temperature of 700 °C, the products are Si/NiSi core/shell nanowires or NiSi nanowires, depending on the concentration of NiCl{sub 2} solution. At a higher temperature (800 °C and 900 °C), other phases of the nickel silicides, including Ni{sub 2}Si, Ni{sub 31}Si{sub 12}, and NiSi{sub 2}, were obtained. It is proposed that the different diffusion rates of Ni and Si atoms at different temperatures played a critical role in the formation of nickel silicide nanowires with different phases.

  1. Quantum oscillations of nitrogen atoms in uranium nitride

    SciTech Connect

    Aczel, Adam A; Granroth, Garrett E; MacDougall, Gregory J; Buyers, W. J. L.; Abernathy, Douglas L; Samolyuk, German D; Stocks, George Malcolm; Nagler, Stephen E

    2012-01-01

    The vibrational excitations of crystalline solids corresponding to acoustic or optic one phonon modes appear as sharp features in measurements such as neutron spectroscopy. In contrast, many-phonon excitations generally produce a complicated, weak, and featureless response. Here we present time-of-flight neutron scattering measurements for the binary solid uranium nitride (UN), showing well-defined, equally-spaced, high energy vibrational modes in addition to the usual phonons. The spectrum is that of a single atom, isotropic quantum harmonic oscillator and characterizes independent motions of light nitrogen atoms, each found in an octahedral cage of heavy uranium atoms. This is an unexpected and beautiful experimental realization of one of the fundamental, exactly-solvable problems in quantum mechanics. There are also practical implications, as the oscillator modes must be accounted for in the design of generation IV nuclear reactors that plan to use UN as a fuel.

  2. Si-rich W silicide films composed of W-atom-encapsulated Si clusters deposited using gas-phase reactions of WF6 with SiH4

    NASA Astrophysics Data System (ADS)

    Okada, Naoya; Uchida, Noriyuki; Kanayama, Toshihiko

    2016-02-01

    We formed Si-rich W silicide films composed of Sin clusters, each of which encapsulates a W atom (WSin clusters with 8 < n ≤ ˜ 12), by using a gas-phase reaction between WF6 and SiH4 in a hot-wall reactor. The hydrogenated WSinHx clusters with reduced F concentration were synthesized in a heated gas phase and subsequently deposited on a substrate heated to 350-420 °C, where they dehydrogenated and coalesced into the film. Under a gas pressure of SiH4 high enough for the WSinHx reactant to collide a sufficient number of times with SiH4 molecules before reaching the substrate, the resulting film was composed of WSin clusters with a uniform n, which was determined by the gas temperature. The formed films were amorphous semiconductors with an optical gap of ˜0.8-1.5 eV and an electrical mobility gap of ˜0.05-0.12 eV, both of which increased as n increased from 8 to 12. We attribute this dependence to the reduction of randomness in the Si network as n increased, which decreased the densities of band tail states and localized states.

  3. Uranium isotopes quantitatively determined by modified method of atomic absorption spectrophotometry

    NASA Technical Reports Server (NTRS)

    Lee, G. H.

    1967-01-01

    Hollow-cathode discharge tubes determine the quantities of uranium isotopes in a sample by using atomic absorption spectrophotometry. Dissociation of the uranium atoms allows a large number of ground state atoms to be produced, absorbing the incident radiation that is different for the two major isotopes.

  4. Diffusion - Reaction: The Oxidation of Silicides in Electronics and Elsewhere

    NASA Astrophysics Data System (ADS)

    D'Heurle, F. M.

    1995-11-01

    The present article is a review of the up-to-date state of knowledge about the oxidation of silicide in film and “bulk" forms. The oxidation of silicides is analyzed with due respect to thermodynamics but the emphasis is placed on the kinetics of the process. A distinction is made between what occurs with silicide thin films used as conductors in the electronic industry, where the silicides are always in presence of excess silicon, and in the oxidation of “bulk" silicide structural parts where this condition is not encountered. Use is made of a graphical approach that was originally used to illustrate the oxidation of Si itself. The kinetic analysis provides at least a qualitative explanation of the conditions that must be met in the electronic industry to maintain the integrity of silicide layers in oxidizing atmospheres, and of the conditions that cause the occurrence of the “pest" phenomenon in structural parts. Although attention is directed mostly to silicides, it is clear that the approach and the model used are valid for other refractory compounds, so that allusions are made also to aluminides and beryllides, etc. Marker experiments to probe the motion of atoms in the silicides during oxidation are analyzed. It is suggested that the relation between electron concentrations and oxidation rates is related to the decomposition of oxygen molecules.

  5. 76 FR 58049 - Atomic Safety and Licensing Board; Honeywell International, Inc.; Metropolis Works Uranium...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-19

    ... COMMISSION Atomic Safety and Licensing Board; Honeywell International, Inc.; Metropolis Works Uranium..., 2011 in the Atomic and Safety Licensing Board Panel's Hearing Room, located on the third floor of Two... ordered. For the Atomic Safety and Licensing Board. Dated: September 13, 2011 in Rockville, Maryland....

  6. Inductively coupled plasma-atomic emission spectroscopy: The determination of trace impurities in uranium hexafluoride

    NASA Astrophysics Data System (ADS)

    Floyd, M. A.; Morrow, R. W.; Farrar, R. B.

    An analytical method has been developed for the determination of trace impurities in high-purity uranium hexafluoride using liquid-liquid extraction of the uranium from the trace impurities followed by analysis with inductively coupled plasma-atomic emission spectroscopy. Detection limits, accuracy, and precision data are presented.

  7. Energy dependence of the trapping of uranium atoms by aluminum oxide surfaces

    NASA Technical Reports Server (NTRS)

    Librecht, K. G.

    1979-01-01

    The energy dependence of the trapping probability for sputtered U-235 atoms striking an oxidized aluminum collector surface at energies between 1 eV and 184 eV was measured. At the lowest energies, approximately 10% of the uranium atoms are not trapped, while above 10 eV essentially all of them stick. Trapping probabilities averaged over the sputtered energy distribution for uranium incident on gold and mica are also presented.

  8. Dopant diffusion in tungsten silicide

    SciTech Connect

    Pan, P.; Hsieh, N.; Geipel, H.J. Jr.; Slusser, G.J.

    1982-04-01

    The dopant (B, P, and As) redistribution in a silicide on polycrystalline silicon structure after annealing at 800 and 1000 /sup 0/C was studied. The distribution of boron was found to be quite different from these of phosphorus and arsenic. At 1000 /sup 0/C, the distribution coefficient for boron at the WSi/sub 2//polycrystalline silicon interface was found to be 2.7. The solubilities of phosphorus and arsenic in WSi/sub 2/ at 1000 /sup 0/C were estimated to be 6 x 10/sup 19/ and 1.6 x 10/sup 19/ atoms/cm/sup 3/, respectively. At 800 /sup 0/C, the diffusion coefficient for the dopants was found to be equal to, or greater than 3.3 x 10/sup -12/ cm/sup 2//s, which is at least three orders of magnitude larger than in silicon.

  9. Metal silicide nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Lih-Juann; Wu, Wen-Wei

    2015-07-01

    The growth, properties and applications of metal silicide nanowires (NWs) have been extensively investigated. The investigations have led to significant advance in the understanding of one-dimensional (1D) metal silicide systems. For example, CoSi is paramagnetic in bulk form, but ferromagnetic in NW geometry. In addition, the helimagnetic phase and skyrmion state in MnSi are stabilized by NW morphology. The influencing factors on the growth of silicide phase have been elucidated for Ni-Si, Pt-Si, and Mn-Si systems. Promising results were obtained for spintronics, non-volatile memories, field emitter, magnetoresistive sensor, thermoelectric generator and solar cells. However, the main thrust has been in microelectronic devices and integrated circuits. Transistors of world-record small size have been fabricated. Reconfigurable Si NW transistors, dually active Si NW transistors and circuits with equal electron and hole transport have been demonstrated. Furthermore, multifunctional devices and logic gates with undoped Si NWs were reported. It is foreseen that practical applications will be realized in the near future.

  10. Study of uranium matrix interference on ten analytes using inductively coupled plasma atomic emission spectrometry

    NASA Astrophysics Data System (ADS)

    Ghazi, A. A.; Qamar, Sajid; Atta, M. A.

    1993-08-01

    Maximum allowable concentrations of 12 elements in uranium hexafluoride feed for enrichment to reactor grade material (about 3%), vary from 1 to 100 ppm ( μg/g). Using an inductively coupled plasma atomic emission spectrometer, 51 lines of ten of these elements (B, Cr, Mo, P, Sb, Si, Ta, Ti, V and W) have been studied with a uranium matrix to investigate the matrix interference on the basis of signal to background (SBR), and background to background ratios (BBR). Detection limits and limits of quantitative determination (LQDs) were calculated for these elements in a uranium matrix using SBR and relative standard deviation of the background signal (RSD B) approach. In almost all cases, the uranium matrix interference reduces the SBRs to the extent that direct trace analysis is impossible. A uranium sample having known concentrations of impurities (around LQDs) was directly analysed with results that showed reasonable accuracy and precision.

  11. Surface morphology of erbium silicide

    NASA Technical Reports Server (NTRS)

    Lau, S. S.; Pai, C. S.; Wu, C. S.; Kuech, T. F.; Liu, B. X.

    1982-01-01

    The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

  12. Status of Uranium Atomic Vapor Laser Isotope Separation Program

    SciTech Connect

    Chen, Hao-Lin; Feinberg, R.M.

    1993-06-01

    This report discusses demonstrations of plant-scale hardware embodying AVLIS technology which were completed in 1992. These demonstrations, designed to provide key economic and technical bases for plant deployment, produced significant quantities of low enriched uranium which could be used for civilian power reactor fuel. We are working with industry to address the integration of AVLIS into the fuel cycle. To prepare for deployment, a conceptual design and cost estimate for a uranium enrichment plant were also completed. The U-AVLIS technology is ready for commercialization.

  13. Identification and quantification of iron silicide phases in thin films

    SciTech Connect

    Miquita, D. R.; Gonzalez, J. C.; Silva, M. I. N. da; Rodrigues, W. N.; Moreira, M. V. B.; Paniago, R.; Ribeiro-Andrade, R.; Magalhaes-Paniago, R.; Pfannes, H.-D.; Oliveira, A. G. de

    2008-09-15

    Iron silicide samples were grown on Si (111) substrates by solid phase epitaxy and reactive deposition epitaxy. The different iron silicide phases and their correlations with the growth parameters were analyzed by x-ray photoelectron spectroscopy, conversion electron Moessbauer spectroscopy, x-ray diffraction, atomic force microscopy, and magnetic force microscopy. The authors investigated the potential of each technique for identifying and quantifying of the phases. In particular, the authors used a semiquantitative analysis of magnetic force microscopy images to spatially resolve the semiconductor {beta}-FeSi{sub 2} phase.

  14. Silicide surface phases on gold

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1981-01-01

    The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

  15. High temperature structural silicides

    SciTech Connect

    Petrovic, J.J.

    1997-03-01

    Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

  16. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

    SciTech Connect

    Lee, J.-G.; Nagase, T.; Yasuda, H.; Mori, H.

    2015-05-21

    The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation. It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.

  17. Monocrystalline molybdenum silicide based quantum dot superlattices grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Savelli, Guillaume; Silveira Stein, Sergio; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent

    2016-09-01

    This paper presents the growth of doped monocrystalline molybdenum-silicide-based quantum dot superlattices (QDSL). This is the first time that such nanostructured materials integrating molybdenum silicide nanodots have been grown. QDSL are grown by reduced pressure chemical vapor deposition (RPCVD). We present here their crystallographic structures and chemical properties, as well as the influence of the nanostructuration on their thermal and electrical properties. Particularly, it will be shown some specific characteristics for these QDSL, such as a localization of nanodots between the layers, unlike other silicide based QDSL, an accumulation of doping atoms near the nanodots, and a strong decrease of the thermal conductivity obtained thanks to the nanostructuration.

  18. Conformal Ni-silicide formation over three-dimensional device structures

    SciTech Connect

    Zhu Zhiwei; Zhang Shili; Gao Xindong; Kubart, Tomas; Zhang Zhibin; Wu Dongping

    2012-07-30

    This letter reports on conformal formation of ultrathin Ni-silicide films over a three-dimension structure relevant to the most advanced tri-gate transistor architecture. This is achieved by combining ionization of the sputtered Ni atoms with application of an appropriate bias to the Si substrate during the sputter-deposition of Ni films. In comparison, use of ordinary DC sputtering for Ni deposition results in thinner or less uniform silicide films on the vertical sidewalls than on the top surface of the three-dimensional structure. The roughened Si sidewall surface is ascribed to be responsible for a deteriorated thermal stability of the resultant silicide films.

  19. 78 FR 56944 - Strata Energy, Inc. (Ross In Situ Recovery Uranium Project); Notice of Atomic Safety and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-16

    ... COMMISSION Strata Energy, Inc. (Ross In Situ Recovery Uranium Project); Notice of Atomic Safety and Licensing Board Reconstitution Pursuant to 10 CFR 2.313(c) and 2.321(b), the Atomic Safety and Licensing Board... 2013. E. Roy Hawkens, Chief Administrative Judge, Atomic Safety and Licensing Board Panel. BILLING...

  20. Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour

    PubMed Central

    Martin, T. L.; Coe, C.; Bagot, P. A. J.; Morrall, P.; Smith, G. D. W; Scott, T.; Moody, M. P.

    2016-01-01

    Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour. PMID:27403638

  1. Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour

    NASA Astrophysics Data System (ADS)

    Martin, T. L.; Coe, C.; Bagot, P. A. J.; Morrall, P.; Smith, G. D. W.; Scott, T.; Moody, M. P.

    2016-07-01

    Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour.

  2. Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour.

    PubMed

    Martin, T L; Coe, C; Bagot, P A J; Morrall, P; Smith, G D W; Scott, T; Moody, M P

    2016-01-01

    Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour. PMID:27403638

  3. Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

    PubMed Central

    2011-01-01

    We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field. PMID:21968083

  4. Dual fuel gradients in uranium silicide plates

    SciTech Connect

    Pace, B.W.

    1997-08-01

    Babcock & Wilcox has been able to achieve dual gradient plates with good repeatability in small lots of U{sub 3}Si{sub 2} plates. Improvements in homogeneity and other processing parameters and techniques have allowed the development of contoured fuel within the cladding. The most difficult obstacles to overcome have been the ability to evaluate the bidirectional fuel loadings in comparison to the perfect loading model and the different methods of instilling the gradients in the early compact stage. The overriding conclusion is that to control the contour of the fuel, a known relationship between the compact, the frames and final core gradient must exist. Therefore, further development in the creation and control of dual gradients in fuel plates will involve arriving at a plausible gradient requirement and building the correct model between the compact configuration and the final contoured loading requirements.

  5. Fuel-cycle cost comparisons with oxide and silicide fuels

    SciTech Connect

    Matos, J.E.; Freese, K.E.

    1982-01-01

    This paper addresses fuel cycle cost comparisons for a generic 10 MW reactor with HEU aluminide fuel and with LEU oxide and silicide fuels in several fuel element geometries. The intention of this study is to provide a consistent assessment of various design options from a cost point of view. Fuel cycle cost benefits could result if a number of reactors were to utilize fuel elements with the same number or different numbers of the same standard fuel plate. Data are presented to quantify these potential cost benefits. This analysis shows that there are a number of fuel element designs using LEU oxide or silicide fuels that have either the same or lower total fuel cycle costs than the HEU design. Use of these fuels with the uranium densities considered requires that they are successfully demonstrated and licensed.

  6. Magnesium silicide intermetallic alloys

    NASA Astrophysics Data System (ADS)

    Li, Gh.; Gill, H. S.; Varin, R. A.

    1993-11-01

    Methods of induction melting an ultra-low-density magnesium silicide (Mg2Si) intermetallic and its alloys and the resulting microstructure and microhardness were studied. The highest quality ingots of Mg2Si alloys were obtained by triple melting in a graphite crucible coated with boron nitride to eliminate reactivity, under overpressure of high-purity argon (1.3 X 105 Pa), at a temperature close to but not exceeding 1105 °C ± 5 °C to avoid excessive evaporation of Mg. After establishing the proper induction-melting conditions, the Mg-Si binary alloys and several Mg2Si alloys macroalloyed with 1 at. pct of Al, Ni, Co, Cu, Ag, Zn, Mn, Cr, and Fe were induction melted and, after solidification, investigated by optical microscopy and quantitative X-ray energy dispersive spectroscopy (EDS). Both the Mg-rich and Si-rich eutectic in the binary alloys exhibited a small but systematic increase in the Si content as the overall composition of the binary alloy moved closer toward the Mg2Si line compound. The Vickers microhardness (VHN) of the as-solidified Mg-rich and Si-rich eutectics in the Mg-Si binary alloys decreased with increasing Mg (decreasing Si) content in the eutectic. This behavior persisted even after annealing for 75 hours at 0.89 pct of the respective eutectic temperature. The Mg-rich eutectic in the Mg2Si + Al, Ni, Co, Cu, Ag, and Zn alloys contained sections exhibiting a different optical contrast and chemical composition than the rest of the eutectic. Some particles dispersed in the Mg2Si matrix were found in the Mg2Si + Cr, Mn, and Fe alloys. The EDS results are presented and discussed and compared with the VHN data.

  7. Uranium Recovery from Seawater: Development of Fiber Adsorbents Prepared via Atom-Transfer Radical Polymerization

    SciTech Connect

    Saito, Tomonori; Brown, Suree; Chatterjee, Sabornie; Kim, Jungseung; Tsouris, Costas; Mayes, Richard T; Kuo, Li-Jung; Gill, Gary; Oyola, Yatsandra; Janke, Christopher James; Dai, Sheng

    2014-01-01

    A novel adsorbent preparation method using atom-transfer radical polymerization (ATRP) combined with radiation-induced graft polymerization (RIGP) was developed to synthesize an adsorbent for uranium recovery from seawater. The ATRP method allowed a much higher degree of grafting on the adsorbent fibers (595 2818%) than that allowed by RIGP alone. The adsorbents were prepared with varied composition of amidoxime groups and hydrophilic acrylate groups. The successful preparation revealed that both ligand density and hydrophilicity were critical for optimal performance of the adsorbents. Adsorbents synthesized in this study showed a relatively high performance (141 179 mg/g at 49 62 % adsorption) in laboratory screening tests using a uranium concentration of ~6 ppm. This performance is much higher than that of known commercial adsorbents. However, actual seawater experiment showed impeded performance compared to the recently reported high-surface-area-fiber adsorbents, due to slow adsorption kinetics. The impeded performance motivated an investigation of the effect of hydrophilic block addition on the graft chain terminus. The addition of hydrophilic block on the graft chain terminus nearly doubled the uranium adsorption capacity in seawater, from 1.56 mg/g to 3.02 mg/g. The investigation revealed the importance of polymer chain conformation, in addition to ligand and hydrophilic group ratio, for advanced adsorbent synthesis for uranium recovery from seawater.

  8. Summary history of domestic uranium procurement under US Atomic Energy Commission contracts. Final report

    SciTech Connect

    Albrethsen, H. Jr.; McGinley, F.E.

    1982-09-01

    During the period 1947 through 1970, the Atomic Energy Commission (AEC) fostered the rapid development and expansion of the domestic uranium mining and milling industry by providing a market for uranium. Some thirty-two mills were constructed during that period to produce U/sub 3/O/sub 8/ concentrates for sale to the AEC. In addition, there were various pilot plants, concentrators, upgraders, heap leach, and solution mining facilities that operated during the period. The purpose of this report is to compile a short narrative history of the AEC's uranium concentrate procurement program and to describe briefly each of the operations that produced uranium for sale to the AEC. Contractual arrangements are described and data are given on quantities of U/sub 3/O/sub 8/ purchased and prices paid. Similar data are included for V/sub 2/O/sub 5/, where applicable. Mill and other plant operating data were also compiled from old AEC records. These latter data were provided by the companies, as a contractual requirement, during the period of operation under AEC contracts. Additionally, an effort was made to determine the present status of each facility by reference to other recently published reports. No sites were visited nor were the individual reports reviewed by the companies, many of which no longer exist. The authors relied almost entirely on published information for descriptions of facilities and milling processes utilized.

  9. Atomic and molecular collision aspects of thermospheric uranium-vapor releases. Technical report, 15 February 1980-31 December 1985

    SciTech Connect

    Hamlin, D.A.

    1990-05-01

    The DNA Uranium (Oxides) LWIR Review Committee considered the effectiveness of field measurements of the LWIR from uranium oxides produced by (hypothetical) controlled releases of uranium vapor from rockets in the thermosphere. Collated here is the writer's work supporting the committee on atomic and molecular collision aspects of such releases. Included is an essential auxiliary study to (a) understand, in terms of atomic and molecular parameters, coefficients for Ba+ diffusion along the magnetic field as measured and predicted for Ba-release events and (b) apply that (limited) understanding to U-release studies. For particles colliding with neutral atmospheric species, several interaction potentials are used to compute velocity-dependent momentum-transfer cross sections, stopping power and range versus energy, and diffusion coefficients. The momentum-transfer cross sections are also compared with cross sections for certain uranium oxide reactions specially atom-transfer reactions.

  10. Survey of plutonium and uranium atom ratios and activity levels in Mortandad Canyon

    SciTech Connect

    Gallaher, B.M.; Efurd, D.W.; Rokop, D.J.; Benjamin, T.M.; Stoker, A.K.

    1997-10-01

    For more than three decades, Mortandad Canyon has been the primary release area of treated liquid radioactive waste from the Los Alamos National Laboratory (Laboratory). In this survey, six water samples and seven stream sediment samples collected in Mortandad Canyon were analyzed by thermal ionization mass spectrometry to determine the plutonium and uranium activity levels and atom ratios. By measuring the {sup 240}Pu/{sup 239}Pu atom ratios, the Laboratory plutonium component was evaluated relative to that from global fallout. Measurements of the relative abundance of {sup 235}U and {sup 236}U were also used to identify non-natural components. The survey results indicate that the Laboratory plutonium and uranium concentrations in waters and sediments decrease relatively rapidly with distance downstream from the major industrial sources. Plutonium concentrations in shallow alluvial groundwater decrease by approximately 1,000-fold along a 3,000-ft distance. At the Laboratory downstream boundary, total plutonium and uranium concentrations were generally within regional background ranges previously reported. Laboratory-derived plutonium is readily distinguished from global fallout in on-site waters and sediments. The isotopic ratio data indicate off-site migration of trace levels of Laboratory plutonium in stream sediments to distances approximately two miles downstream of the Laboratory boundary.

  11. Survey of plutonium and uranium atom ratios and activity levels in Mortandad Canyon

    SciTech Connect

    Gallaher, B.M.; Benjamin, T.M.; Rokop, D.J.; Stoker, A.K.

    1997-09-22

    For more than three decades Mortandad Canyon has been the primary release area of treated liquid radioactive waste from the Los Alamos National Laboratory (Laboratory). In this survey, six water samples and seven stream sediment samples collected in Mortandad Canyon were analyzed by thermal ionization mass spectrometry (TIMS) to determine the plutonium and uranium activity levels and atom ratios. Be measuring the {sup 240}Pu/{sup 239}Pu atom ratios, the Laboratory plutonium component was evaluated relative to that from global fallout. Measurements of the relative abundance of {sup 235}U and {sup 236}U were also used to identify non-natural components. The survey results indicate the Laboratory plutonium and uranium concentrations in waters and sediments decrease relatively rapidly with distance downstream from the major industrial sources. Plutonium concentrations in shallow alluvial groundwater decrease by approximately 1000 fold along a 3000 ft distance. At the Laboratory downstream boundary, total plutonium and uranium concentrations were generally within regional background ranges previously reported. Laboratory derived plutonium is readily distinguished from global fallout in on-site waters and sediments. The isotopic ratio data indicates off-site migration of trace levels of Laboratory plutonium in stream sediments to distances approximately two miles downstream of the Laboratory boundary.

  12. Silicene versus two-dimensional ordered silicide: Atomic and electronic structure of Si-(√19 ×√19 )R23.4∘/Pt(111)

    NASA Astrophysics Data System (ADS)

    Švec, M.; Hapala, P.; Ondráček, M.; Merino, P.; Blanco-Rey, M.; Mutombo, P.; Vondráček, M.; Polyak, Y.; Cháb, V.; Martín Gago, J. A.; Jelínek, P.

    2014-05-01

    We discuss the possibility of a two-dimensional ordered structure formed upon deposition of Si on metal surfaces. We investigate the atomic and electronic structure of the Si-(√19 ×√19 )R23.4∘/Pt(111) surface reconstruction by means of a set of experimental surface-science techniques supported by theoretical calculations. The theory achieves very good agreement with the experimental results and is corroborating beyond any doubt that this phase is a surface alloy consisting of Si3Pt tetramers that resembles a twisted kagome lattice. These findings render unlikely any formation of silicene or germanene on Pt(111) and other transition-metal surfaces.

  13. Lattice location and annealing behaviour of helium atoms implanted in uranium dioxide single crystals

    NASA Astrophysics Data System (ADS)

    Belhabib, T.; Desgardin, P.; Sauvage, T.; Erramli, H.; Barthe, M. F.; Garrido, F.; Carlot, G.; Nowicki, L.; Garcia, P.

    2015-12-01

    Helium behaviour in irradiated uranium dioxide may play an important role in the mechanical stability of nuclear fuels during and after its use in nuclear power plants. Helium migration mechanisms in bulk UO2 have already been the subject of theoretical studies but there is a lack of experimental data relating to the most stable location in the crystal. To this end, we have studied uranium dioxide samples implanted with helium ions at low fluence before and after thermal annealing in the range 600 and 800 °C. UO2 single crystals were implanted with 50 keV-3He ions at the fluence of 1 × 1015 at cm-2 and the location in the lattice of helium atoms was investigated using NRA (Nuclear Reaction Analysis) based on the reaction of 3He with deuterons (3He (d,p) 4He) in a channelling mode, recording angular scans across axes and planes. Furthermore, the uranium sub-lattice was analysed by the classical RBS method. After implantation, the experimental angular scans recorded across the main crystallographic axes and along major planes show that the helium atoms in their large majority occupy octahedral interstitial sites. No modification of the occupied crystallographic site was found after annealing at 600 °C. Conversely, no crystallographic relationship between matrix and helium signals was revealed following annealing at 800 °C. The latter feature is likely related to the clustering of implanted helium atoms into gas-filled bubbles. These experimental results have been quantified and interpreted using Monte Carlo simulations with the McChasy code.

  14. Nanoscale contact engineering for Silicon/Silicide nanowire devices

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Chen

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects. Electrical measurement of PtSi nanowires shows a low resistivity of ˜28.6 μΩ·cm and a high breakdown current density beyond 108 A/cm2. Furthermore, using single-crystal PtSi/Si/PtSi nanowire heterostructures with atomically clean interfaces, we have fabricated p-channel enhancement mode transistors with the best reported performance for intrinsic silicon nanowires to date. In our results, silicide can provide a clean and no Fermi level pinning interface and then silicide can form Ohmic-contact behavior by replacing the source/drain metal with PtSi. It has been proven by our experiment by contacting PtSi with intrinsic Si nanowires (no extrinsic doping) to achieve high performance p-channel device. By utilizing the same approach, single crystal MnSi nanowires and MnSi/Si/MnSi nanowire heterojunction with atomically sharp interfaces can also been grown. Electrical transport studies on Mn

  15. Recent work on environmental embrittlement in silicides

    SciTech Connect

    Chen, G.; Peng, J.; Wang, X.

    1997-12-31

    This paper reviewed the recent progress in the environmental embrittlement of silicide. On the surface of silicides, the Si in the silicides such as Fe{sub 3}(Si,Al) alloy reacts with both oxygen and water vapor more easy than with iron. A molecular hydrogen mechanism of surface reaction, i.e., Si + 2H{sub 2}O = SiO{sub 2} + 2H{sub 2}, can be derived. The moisture-induced embrittlement of silicides can be considered to be an embrittlement in a localized high pressure molecular hydrogen condition. It is a kinetic hydrogen gas embrittlement. Silicides may have more severely intrinsic brittleness than iron aluminides due to their special electronic structure and bonding mechanism, leading to elucidate the role of environment on ductility with difficulty. The improvement of both the intrinsic brittleness and moisture-induced embrittlement are critical for the development of silicides.

  16. Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth

    NASA Astrophysics Data System (ADS)

    Yaish, Y. E.; Katsman, A.; Cohen, G. M.; Beregovsky, M.

    2011-05-01

    The common practice for nickel silicide formation in silicon nanowires (SiNWs) relies on axial growth of silicide along the wire that is initiated from nickel reservoirs at the source and drain contacts. In the present work the silicide intrusions were studied for various parameters including wire diameter (25-50 nm), annealing time (15-120 s), annealing temperature (300-440∘C), and the quality of the initial Ni/Si interface. The silicide formation was investigated by high-resolution scanning electron microscopy, high-resolution transmission electron microscopy (TEM), and atomic force microscopy. The main part of the intrusion formed at 420∘C consists of monosilicide NiSi, as was confirmed by energy dispersive spectroscopy STEM, selected area diffraction TEM, and electrical resistance measurements of fully silicided SiNWs. The kinetics of nickel silicide axial growth in the SiNWs was analyzed in the framework of a diffusion model through constrictions. The model calculates the time dependence of the intrusion length, L, and predicts crossover from linear to square root time dependency for different wire parameters, as confirmed by the experimental data.

  17. Formation of silicides in annealed periodic multilayers

    NASA Astrophysics Data System (ADS)

    Maury, H.; Jonnard, P.; Le Guen, K.; André, J.-M.

    2009-05-01

    Periodic multilayers of nanometric period are widely used as optical components for the X-ray and extreme UV (EUV) ranges, in X-ray space telescopes, X-ray microscopes, EUV photolithography or synchrotron beamlines for example. Their optical performances depend on the quality of the interfaces between the various layers: chemical interdiffusion or mechanical roughness shifts the application wavelength and can drastically decrease the reflectance. Since under high thermal charge interdiffusion is known to get enhanced, the study of the thermal stability of such structures is essential to understand how interfacial compounds develop. We have characterized X-ray and EUV siliconcontaining multilayers (Mo/Si, Sc/Si and Mg/SiC) as a function of the annealing temperature (up to 600°C) using two non-destructive methods. X-ray emission from the silicon atoms, describing the Si valence states, is used to determine the chemical nature of the compounds present in the interphases while X-ray reflectivity in the hard and soft X-ray ranges can be related to the optical properties. In the three cases, interfacial metallic (Mo, Sc, Mg) silicides are evidenced and the thickness of the interphase increases with the annealing temperature. For Mo/Si and Sc/Si multilayers, silicides are even present in the as-prepared multilayers. Characteristic parameters of the stacks are determined: composition of the interphases, thickness and roughness of the layers and interphases if any. Finally, we have evidenced the maximum temperature of application of these multilayers to minimize interdiffusion.

  18. Synthesis and characterization of nanocrystalline silicide compounds

    SciTech Connect

    Karen, B.

    1992-01-03

    This thesis involves the investigation into the production of nanocrystalline silicide compounds by radio frequency inductively coupled plasma (RF-ICP) and mechanical milling. A system constructed which utilized a RF-ICP, a powder feed system and a condensation / collection chamber to produce nanocrystalline materials. Several silicides, such as Ti{sub 5}Si{sub 3}, Cr{sub 3}Si and MoSi{sub 2}, were fed into the plasma were they vaporized. The vaporized material then passed into a connecting chamber, where it condensed out of the vapor phase and the resulting powder was collected. Much of the work conducted was in designing and building of the systems components. This was followed by establishing the plasmas operating parameters. The material collected from the ICP chamber was then compared to material produced by mechanical milling. The material produced by both methods were characterized by x-ray diffraction, scanning and transmission-electron microscopy, and energy dispersive spectroscopy. The results indicate that it is possible to produce nanocrystalline material by mechanical milling; however, there is a significant amount of contamination from the milling ball and milling container. The results also show that the Ti{sub 5}Si{sub 3} and Cr{sub 3}Si compounds can be produced in nanocrystalline form by the ICP method. The resultant material collected from the ICP chamber following the MoSi{sub 2} run consisted of nanocrystalline Si and crystalline, Mo rich Si compound. Inductively coupled plasma - atomic emission spectroscopy (ICP-AES) was also used to observe the powders as they passed through the plasma. The resulting data indicates that each compound was vaporized and dissociated in the plasma. The following thesis describes the apparatus and experimental procedure used in producing nanocrystals.

  19. Improved high-temperature silicide coatings

    NASA Technical Reports Server (NTRS)

    Klopp, W. D.; Stephens, J. R.; Stetson, A. R.; Wimber, R. T.

    1969-01-01

    Special technique for applying silicide coatings to refractory metal alloys improves their high-temperature protective capability. Refractory metal powders mixed with a baked-out organic binder and sintered in a vacuum produces a porous alloy layer on the surface. Exposing the layer to hot silicon converts it to a silicide.

  20. Process for producing enriched uranium having a .sup.235 U content of at least 4 wt. % via combination of a gaseous diffusion process and an atomic vapor laser isotope separation process to eliminate uranium hexafluoride tails storage

    DOEpatents

    Horton, James A.; Hayden, Jr., Howard W.

    1995-01-01

    An uranium enrichment process capable of producing an enriched uranium, having a .sup.235 U content greater than about 4 wt. %, is disclosed which will consume less energy and produce metallic uranium tails having a lower .sup.235 U content than the tails normally produced in a gaseous diffusion separation process and, therefore, eliminate UF.sub.6 tails storage and sharply reduce fluorine use. The uranium enrichment process comprises feeding metallic uranium into an atomic vapor laser isotope separation process to produce an enriched metallic uranium isotopic mixture having a .sup.235 U content of at least about 2 wt. % and a metallic uranium residue containing from about 0.1 wt. % to about 0.2 wt. % .sup.235 U; fluorinating this enriched metallic uranium isotopic mixture to form UF.sub.6 ; processing the resultant isotopic mixture of UF.sub.6 in a gaseous diffusion process to produce a final enriched uranium product having a .sup.235 U content of at least 4 wt. %, and up to 93.5 wt. % or higher, of the total uranium content of the product, and a low .sup.235 U content UF.sub.6 having a .sup.235 U content of about 0.71 wt. % of the total uranium content of the low .sup.235 U content UF.sub.6 ; and converting this low .sup.235 U content UF.sub.6 to metallic uranium for recycle to the atomic vapor laser isotope separation process.

  1. Process for producing enriched uranium having a {sup 235}U content of at least 4 wt. % via combination of a gaseous diffusion process and an atomic vapor laser isotope separation process to eliminate uranium hexafluoride tails storage

    DOEpatents

    Horton, J.A.; Hayden, H.W. Jr.

    1995-05-30

    An uranium enrichment process capable of producing an enriched uranium, having a {sup 235}U content greater than about 4 wt. %, is disclosed which will consume less energy and produce metallic uranium tails having a lower {sup 235}U content than the tails normally produced in a gaseous diffusion separation process and, therefore, eliminate UF{sub 6} tails storage and sharply reduce fluorine use. The uranium enrichment process comprises feeding metallic uranium into an atomic vapor laser isotope separation process to produce an enriched metallic uranium isotopic mixture having a {sup 235} U content of at least about 2 wt. % and a metallic uranium residue containing from about 0.1 wt. % to about 0.2 wt. % {sup 235} U; fluorinating this enriched metallic uranium isotopic mixture to form UF{sub 6}; processing the resultant isotopic mixture of UF{sub 6} in a gaseous diffusion process to produce a final enriched uranium product having a {sup 235}U content of at least 4 wt. %, and up to 93.5 wt. % or higher, of the total uranium content of the product, and a low {sup 235}U content UF{sub 6} having a {sup 235}U content of about 0.71 wt. % of the total uranium content of the low {sup 235}U content UF{sub 6}; and converting this low {sup 235}U content UF{sub 6} to metallic uranium for recycle to the atomic vapor laser isotope separation process. 4 figs.

  2. Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition

    SciTech Connect

    Coumba Ndoye, Kandabara Tapily, Marius Orlowski, Helmut Baumgart, Diefeng Gu

    2011-07-01

    Niobium was deposited by physical vapor deposition (PVD) using e-beam evaporation on bare (100) silicon substrates and SiO2 surfaces. The formation of niobium silicide was investigated by annealing PVD Nb films in the temperatures range 400–1000°C. At all elevated annealing temperatures the resistivity of Nb silicide is substantially higher than that of Nb. The Nb silicidation as a function of temperature has been investigated and different NbXSiy compounds have been characterized. It has been observed that the annealing of the Nb film on Si is accompanied by a strong volume expansion of about 2.5 of the resulting reacted film. The films' structural properties were studied using X-Ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM), which was not previously presented in the context of the extant NbSi literature. The X-Ray diffraction characterization of the Nb on Si sample annealed at 1000°C, showed the presence of hexagonal Nb5Si3 phases, with a dominant peak at the (200) plane, and NbSi2 phases. Fractal dimension calculations indicate a distinct transition from Stranski-Krastanov to Volmer-Weber film growth for NbSi formation at the annealing temperature of 600°C and above.

  3. Nanoscale contact engineering for Silicon/Silicide nanowire devices

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Chen

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects. Electrical measurement of PtSi nanowires shows a low resistivity of ˜28.6 μΩ·cm and a high breakdown current density beyond 108 A/cm2. Furthermore, using single-crystal PtSi/Si/PtSi nanowire heterostructures with atomically clean interfaces, we have fabricated p-channel enhancement mode transistors with the best reported performance for intrinsic silicon nanowires to date. In our results, silicide can provide a clean and no Fermi level pinning interface and then silicide can form Ohmic-contact behavior by replacing the source/drain metal with PtSi. It has been proven by our experiment by contacting PtSi with intrinsic Si nanowires (no extrinsic doping) to achieve high performance p-channel device. By utilizing the same approach, single crystal MnSi nanowires and MnSi/Si/MnSi nanowire heterojunction with atomically sharp interfaces can also been grown. Electrical transport studies on Mn

  4. Uranium isotopic ratio measurements of U3O8 reference materials by atom probe tomography.

    PubMed

    Fahey, Albert J; Perea, Daniel E; Bartrand, Jonah; Arey, Bruce W; Thevuthasan, Suntharampillai

    2016-03-01

    We report results of measurements of isotopic ratios obtained with atom probe tomography on U3O8 reference materials certified for their isotopic abundances of uranium. The results show good agreement with the certified values. High backgrounds due to tails from adjacent peaks complicate the measurement of the integrated peak areas as well as the fact that only oxides of uranium appear in the spectrum, the most intense of which is doubly charged. In addition, lack of knowledge of other instrumental parameters, such as the dead time, may bias the results. Isotopic ratio measurements can be performed at the nanometer-scale with the expectation of sensible results. The abundance sensitivity and mass resolving power of the mass spectrometer are not sufficient to compete with magnetic-sector instruments but are not far from measurements made by ToF-SIMS of other isotopic systems. The agreement of the major isotope ratios is more than sufficient to distinguish most anthropogenic compositions from natural. PMID:26774651

  5. Uranium Isotopic Ratio Measurements of U3O8 Reference Materials by Atom Probe Tomography

    SciTech Connect

    Fahey, Albert J.; Perea, Daniel E.; Bartrand, Jonah AG; Arey, Bruce W.; Thevuthasan, Suntharampillai

    2016-01-01

    We report results of measurements of isotopic ratios obtained with atom probe tomography on U3O8 reference materials certified for their isotopic abundances of uranium. The results show good agreement with the certified values. High backgrounds due to tails from adjacent peaks complicate the measurement of the integrated peak areas as well as the fact that only oxides of uranium appear in the spectrum, the most intense of which is doubly charged. In addition, lack of knowledge of other instrumental parameters, such as the dead time, may bias the results. Isotopic ratio measurements can be performed at the nanometer-scale with the expectation of sensible results. The abundance sensitivity and mass resolving power of the mass spectrometer are not sufficient to compete with magnetic-sector instruments but are not far from measurements made by ToF-SIMS of other isotopic systems. The agreement of the major isotope ratios is more than sufficient to distinguish most anthropogenic compositions from natural.

  6. Uranium*

    NASA Astrophysics Data System (ADS)

    Grenthe, Ingmar; Drożdżyński, Janusz; Fujino, Takeo; Buck, Edgar C.; Albrecht-Schmitt, Thomas E.; Wolf, Stephen F.

    Uranium compounds have been used as colorants since Roman times (Caley, 1948). Uranium was discovered as a chemical element in a pitchblende specimen by Martin Heinrich Klaproth, who published the results of his work in 1789. Pitchblende is an impure uranium oxide, consisting partly of the most reduced oxide uraninite (UO2) and partly of U3O8. Earlier mineralogists had considered this mineral to be a complex oxide of iron and tungsten or of iron and zinc, but Klaproth showed by dissolving it partially in strong acid that the solutions yielded precipitates that were different from those of known elements. Therefore he concluded that it contained a new element (Mellor, 1932); he named it after the planet Uranus, which had been discovered in 1781 by William Herschel, who named it after the ancient Greek deity of the Heavens.

  7. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    SciTech Connect

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-14

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set limit using new all-electron correlation consistent basis sets. The latter was carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons has been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. The final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV) and thus more reliable than the current experimental values of IP{sub 3} through IP{sub 6}.

  8. The Effect of the Dose and Energy of a Pre-Silicide Implant on Nickel Silicide Formation

    SciTech Connect

    Rice, Jeffrey H.

    2008-11-03

    Pre-silicide implants have been used to increase the thermal stability of nickel silicide (NiSi) and to improve device performance. This study evaluates the effect of the dose, energy and species of a pre-silicide ion implant on NiSi phase formation. The resulting silicide was evaluated using sheet resistance, scanning electron Microscope (SEM) cross-sections, and Rutherford Backscattering Spectroscopy (RBS) analysis. It was found that a high dose argon implant will completely inhibit the silicide formation.

  9. Synthesis and design of silicide intermetallic materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.; Park, Y.; Hollis, K.J.; Kung, H.H.

    1998-11-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries.

  10. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization from Chlorinated Polypropylene and Polyethylene Trunk Fibers

    DOE PAGESBeta

    Brown, Suree; Chatterjee, Sabornie; Li, Meijun; Yue, Yanfeng; Tsouris, Costas; Janke, Christopher J.; Saito, Tomonori; Dai, Sheng

    2015-12-10

    Seawater contains a large amount of uranium (~4.5 billion tons) which can serve as a limitless supply of an energy source. However, in order to make the recovery of uranium from seawater economically feasible, lower manufacturing and deployment costs are required, and thus, solid adsorbents must have high uranium uptake, reusability, and high selectivity toward uranium. In this study, atom-transfer radical polymerization (ATRP), without the radiation-induced graft polymerization (RIGP), was used for grafting acrylonitrile (AN) and tert-butyl acrylate (tBA) from a new class of trunk fibers, forming adsorbents in a readily deployable form. The new class of trunk fibers wasmore » prepared by the chlorination of PP round fiber, hollow-gear-shaped PP fiber, and hollow-gear-shaped PE fiber. During ATRP, degrees of grafting (d.g.) varied according to the structure of active chlorine sites on trunk fibers and ATRP conditions, and the d.g. as high as 2570% was obtained. Resulting adsorbent fibers were evaluated in U-spiked simulated seawater and the maximum adsorption capacity of 146.6 g U/kg, much higher than that of a standard adsorbent JAEA fiber (75.1 g/kg), was obtained. This new type of trunk fibers can be used for grafting a variety of uranium-interacting ligands, including designed ligands that are highly selective toward uranium.« less

  11. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization from Chlorinated Polypropylene and Polyethylene Trunk Fibers

    SciTech Connect

    Brown, Suree; Chatterjee, Sabornie; Li, Meijun; Yue, Yanfeng; Tsouris, Costas; Janke, Christopher J.; Saito, Tomonori; Dai, Sheng

    2015-12-10

    Seawater contains a large amount of uranium (~4.5 billion tons) which can serve as a limitless supply of an energy source. However, in order to make the recovery of uranium from seawater economically feasible, lower manufacturing and deployment costs are required, and thus, solid adsorbents must have high uranium uptake, reusability, and high selectivity toward uranium. In this study, atom-transfer radical polymerization (ATRP), without the radiation-induced graft polymerization (RIGP), was used for grafting acrylonitrile (AN) and tert-butyl acrylate (tBA) from a new class of trunk fibers, forming adsorbents in a readily deployable form. The new class of trunk fibers was prepared by the chlorination of PP round fiber, hollow-gear-shaped PP fiber, and hollow-gear-shaped PE fiber. During ATRP, degrees of grafting (d.g.) varied according to the structure of active chlorine sites on trunk fibers and ATRP conditions, and the d.g. as high as 2570% was obtained. Resulting adsorbent fibers were evaluated in U-spiked simulated seawater and the maximum adsorption capacity of 146.6 g U/kg, much higher than that of a standard adsorbent JAEA fiber (75.1 g/kg), was obtained. This new type of trunk fibers can be used for grafting a variety of uranium-interacting ligands, including designed ligands that are highly selective toward uranium.

  12. Neutronic study on conversion of SAFARI-1 to LEU silicide fuel

    SciTech Connect

    Ball, G.; Pond, R.; Hanan, N.; Matos, J.

    1995-02-01

    This paper marks the initial study into the technical and economic feasibility of converting the SAFARI-1 reactor in South Africa to LEU silicide fuel. Several MTR assembly geometries and LEU uranium densities have been studied and compared with MEU and HEU fuels. Two factors of primary importance for conversion of SAFARI-1 to LEU fuel are the economy of the fuel cycle and the performance of the incore and excore irradiation positions.

  13. Method for forming metallic silicide films on silicon substrates by ion beam deposition

    DOEpatents

    Zuhr, Raymond A.; Holland, Orin W.

    1990-01-01

    Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

  14. Epitaxial insertion of gold silicide nanodisks during the growth of silicon nanowires.

    PubMed

    Um, Han-Don; Jee, Sang-Won; Park, Kwang-Tae; Jung, Jin-Young; Guo, Zhongyi; Lee, Jung-Ho

    2011-07-01

    Nanodisk-shaped, single-crystal gold silicide heterojunctions were inserted into silicon nanowires during vapor-liquid-solid growth using Au as a catalyst within a specific range of chlorine-to-hydrogen atomic ratio. The mechanism of nanodisk formation has been investigated by changing the source gas ratio of SiCl4 to H2. We report that an over-supply of silicon into the Au-Si liquid alloy leads to highly supersaturated solution and enhances the precipitation of Au in the silicon nanowires due to the formation of unstable phases within the liquid alloy. It is shown that the gold precipitates embedded in the silicon nanowires consisted of a metastable gold silicide. Interestingly, faceting of gold silicide was observed at the Au/Si interfaces, and silicon nanowires were epitaxially grown on the top of the nanodisk by vapor-liquid-solid growth. High resolution transmission electron microscopy confirmed that gold silicide nanodisks are epitaxially connected to the silicon nanowires in the direction of growth direction. These gold silicide nanodisks would be useful as nanosized electrical junctions for future applications in nanowire interconnections. PMID:22121669

  15. Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

    NASA Astrophysics Data System (ADS)

    Das, Debolina; Mahato, J. C.; Bisi, Bhaskar; Satpati, B.; Dev, B. N.

    2014-11-01

    Iron silicide (cubic FeSi2) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi2 nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along their edges.

  16. Oxide growth on silicides in oxygen plasma

    NASA Astrophysics Data System (ADS)

    Climent, A.; Enard, J. P.; Lavernhe, B.; Perriere, J.; Straboni, A.; Vuillermoz, B.; Levy, D.

    We have shown the possibility of growing thick oxide films on refractory metal silicides by plasma oxidation in the 500-900°C temperature range. Thin layers of Si-rich silicides TiSi x and WSi y ( x, y > 2) deposited onto Si or SiO 2 by cosputtering have been oxidized in and RF plasma at floating potential. The oxide growth rate, composition and thickness, and the depth distribution of cations were determined by the complementary use of nuclear reaction analysis and RBS. We have found that silicon in excess in the films diffuses through the silicide towards the surface to form a SiO 2 passivating overlayer. The Si oxide growth rate is diffusion limited, while for long treatment oxidation of the silicide itself occurs with the formation of an oxide mixture (metal oxide and SiO 2).

  17. Ensuring the Consistency of Silicide Coatings

    NASA Technical Reports Server (NTRS)

    Ramani, V.; Lampson, F. K.

    1982-01-01

    Diagram specifies optimum fusing time for given thicknesses of refractory metal-silicide coatings on columbium C-103 substrates. Adherence to indicated fusion times ensures consistent coatings and avoids underdiffusion and overdiffusion. Accuracy of diagram has been confirmed by tests.

  18. On the kinetics of platinum silicide formation

    NASA Astrophysics Data System (ADS)

    Faber, Erik J.; Wolters, Rob A. M.; Schmitz, Jurriaan

    2011-02-01

    In this work, the kinetics of platinum silicide formation for thin Pt films (50 nm) on monocrystalline ⟨100⟩ silicon is investigated via in situ resistance measurements under isothermal (197-275 °C) conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and √t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n =1.4±0.1. Additionally, an effective activation energy EA=1.7±0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts.

  19. Matrix infrared spectra of NUN formed by the insertion of uranium atoms into molecular nitrogen

    SciTech Connect

    Hunt, R.D. ); Yustein, J.T.; Andrews, L. )

    1993-04-15

    Pulsed-laser ablated uranium atoms were codeposited with [sup 14]N[sub 2]([sup 15]N[sub 2]) and excess Ar at 12 K. The Fourier transform infrared (FTIR) spectrum revealed a [ital single] product, UN[sub 2], which exhibited a [nu][sub 3] absorption at 1051.0 cm[sup [minus]1]. Ultraviolet (UV) photolysis increased the yield of UN[sub 2] by threefold and showed that electronic excitation facilitated the [ital insertion] reaction. N[sub 2] perturbed UN[sub 2] bands at 1041.3 and 1031.5 cm[sup [minus]1] grew sharply during matrix annealings. In [sup 14]N[sup 15]N experiments the [nu][sub 1] and [nu][sub 3] modes of [sup 14]NU[sup 15]N were observed at 987.2 and 1040.7 cm[sup [minus]1], respectively; FG matrix calculations were performed to determine [ital F][sub [ital r

  20. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    SciTech Connect

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-12

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set (CBS) limit using new all-electron correlation consistent basis sets. The latter were carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons have been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. As a result, the final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV), and thus more reliable than the current experimental values of IP3 through IP6.

  1. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    DOE PAGESBeta

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-12

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set (CBS) limit using new all-electron correlation consistent basis sets. The latter were carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons have been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. As amore » result, the final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV), and thus more reliable than the current experimental values of IP3 through IP6.« less

  2. Near-threshold photoionization of hydrogenlike uranium studied in ion-atom collisions via the time-reversed process.

    PubMed

    Stöhlker, T; Ma, X; Ludziejewski, T; Beyer, H F; Bosch, F; Brinzanescu, O; Dunford, R W; Eichler, J; Hagmann, S; Ichihara, A; Kozhuharov, C; Krämer, A; Liesen, D; Mokler, P H; Stachura, Z; Swiat, P; Warczak, A

    2001-02-01

    Radiative electron capture, the time-reversed photoionization process occurring in ion-atom collisions, provides presently the only access to photoionization studies for very highly charged ions. By applying the deceleration mode of the ESR storage ring, we studied this process in low-energy collisions of bare uranium ions with low- Z target atoms. This technique allows us to extend the current information about photoionization to much lower energies than those accessible for neutral heavy elements in the direct reaction channel. The results prove that for high- Z systems, higher-order multipole contributions and magnetic corrections persist even at energies close to the threshold. PMID:11177990

  3. METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES

    DOEpatents

    Bowman, M.G.; Krikorian, N.H.

    1961-10-01

    A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)

  4. Near surface silicide formation after off-normal Fe-implantation of Si(001) surfaces

    SciTech Connect

    Khanbabaee, B. Pietsch, U.; Lützenkirchen-Hecht, D.; Hübner, R.; Grenzer, J.; Facsko, S.

    2014-07-14

    We report on formation of non-crystalline Fe-silicides of various stoichiometries below the amorphized surface of crystalline Si(001) after irradiation with 5 keV Fe{sup +} ions under off-normal incidence. We examined samples prepared with ion fluences of 0.1 × 10{sup 17} and 5 × 10{sup 17} ions cm{sup −2} exhibiting a flat and patterned surface morphology, respectively. Whereas the iron silicides are found across the whole surface of the flat sample, they are concentrated at the top of ridges at the rippled surface. A depth resolved analysis of the chemical states of Si and Fe atoms in the near surface region was performed by combining X-ray photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) using synchrotron radiation. The chemical shift and the line shape of the Si 2p core levels and valence bands were measured and associated with the formation of silicide bonds of different stoichiometric composition changing from an Fe-rich silicides (Fe{sub 3}Si) close to the surface into a Si-rich silicide (FeSi{sub 2}) towards the inner interface to the Si(001) substrate. This finding is supported by XAS analysis at the Fe K-edge which shows changes of the chemical environment and the near order atomic coordination of the Fe atoms in the region close to surface. Because a similar Fe depth profile has been found for samples co-sputtered with Fe during Kr{sup +} ion irradiation, our results suggest the importance of chemically bonded Fe in the surface region for the process of ripple formation.

  5. Linking atomic and mesoscopic scales for the modelling of the transport properties of uranium dioxide under irradiation

    NASA Astrophysics Data System (ADS)

    Bertolus, Marjorie; Freyss, Michel; Dorado, Boris; Martin, Guillaume; Hoang, Kiet; Maillard, Serge; Skorek, Richard; Garcia, Philippe; Valot, Carole; Chartier, Alain; Van Brutzel, Laurent; Fossati, Paul; Grimes, Robin W.; Parfitt, David C.; Bishop, Clare L.; Murphy, Samuel T.; Rushton, Michael J. D.; Staicu, Dragos; Yakub, Eugen; Nichenko, Sergii; Krack, Matthias; Devynck, Fabien; Ngayam-Happy, Raoul; Govers, Kevin; Deo, Chaitanya S.; Behera, Rakesh K.

    2015-07-01

    This article presents a synthesis of the investigations at the atomic scale of the transport properties of defects and fission gases in uranium dioxide, as well as of the transfer of results from the atomic scale to models at the mesoscopic scale, performed during the F-BRIDGE European project (2008-2012). We first present the mesoscale models used to investigate uranium oxide fuel under irradiation, and in particular the cluster dynamics and kinetic Monte Carlo methods employed to model the behaviour of defects and fission gases in UO2, as well as the parameters of these models. Second, we describe briefly the atomic scale methods employed, i.e. electronic structure calculations and empirical potential methods. Then, we show the results of the calculation of the data necessary for the mesoscale models using these atomic scale methods. Finally, we summarise the links built between the atomic and mesoscopic scale by listing the data calculated at the atomic scale which are to be used as input in mesoscale modelling. Despite specific difficulties in the description of fuel materials, the results obtained in F-BRIDGE show that atomic scale modelling methods are now mature enough to obtain precise data to feed higher scale models and help interpret experiments on nuclear fuels. These methods bring valuable insight, in particular the formation, binding and migration energies of point and extended defects, fission product localization, incorporation energies and migration pathways, elementary mechanisms of irradiation induced processes. These studies open the way for the investigation of other significant phenomena involved in fuel behaviour, in particular the thermochemical and thermomechanical properties and their evolution in-pile, complex microstructures, as well as of more complex fuels.

  6. International Atomic Energy Agency support of research reactor highly enriched uranium to low enriched uranium fuel conversion projects

    SciTech Connect

    Bradley, E.; Adelfang, P.; Goldman, I.N.

    2008-07-15

    The IAEA has been involved for more than twenty years in supporting international nuclear non- proliferation efforts associated with reducing the amount of highly enriched uranium (HEU) in international commerce. IAEA projects and activities have directly supported the Reduced Enrichment for Research and Test Reactors (RERTR) programme, as well as directly assisted efforts to convert research reactors from HEU to LEU fuel. HEU to LEU fuel conversion projects differ significantly depending on several factors including the design of the reactor and fuel, technical needs of the member state, local nuclear infrastructure, and available resources. To support such diverse endeavours, the IAEA tailors each project to address the relevant constraints. This paper presents the different approaches taken by the IAEA to address the diverse challenges involved in research reactor HEU to LEU fuel conversion projects. Examples of conversion related projects in different Member States are fully detailed. (author)

  7. Silicene-type Surface Reconstruction on C40 Hexagonal Silicides

    NASA Astrophysics Data System (ADS)

    Volders, Cameron; Reinke, Petra

    Silicene has emerged as the next two-dimensional material possessing a Dirac type electronic structure making it a prime candidate for integration in electronic devices. The study of silicene is relatively new and many aspects have yet to be fully understood. Here we present a scanning tunneling microscopy (STM) study of a Silicene-type surface reconstruction observed on nanometer scale hexagonal-MoSi2 crystallites. This surface reconstruction is specific to the C40 structure of h-MoSi2 and can initially be defined as a geometric silicene while the coupling between the silicene surface and the silicide bulk is under investigation. The lateral dimensions correspond to a superstructure where the silicene hexagons are slightly buckled and two of the six Si atoms are visible in the STM images creating a honeycomb pattern. The local electronic structure of the silicene is currently being studied with ST spectroscopy and the impact of confinement will be addressed. These results open an alternative route to Silicene growth by using surface reconstructions on metallic and semiconducting C40 silicide structures, which is promising for direct device integration on Si-platforms.

  8. Diffusion formation of nickel silicide contacts in SiNWs

    NASA Astrophysics Data System (ADS)

    Beregovsky, M.; Katsman, A.; Hajaj, E. M.; Yaish, Y. E.

    2013-02-01

    Time and temperature dependencies of nickel silicide axial growth in Si nanowires (SiNWs) were studied for a temperature range of 300-440 °C and nanowire diameters of 30-60 nm. A square root time dependence of the total silicide intrusion length was found. It was concluded that formation of nickel silicides was controlled by diffusion of Ni along the nickel silicide surface or the nickel silicide/SiO2 interface to the Si/silicide interface. Subsequent annealing cycles at different temperatures revealed Arrhenius-type behavior for the increase of the intrusion length square (ΔLn2) with an activation energy of 1.45 ± 0.11 eV. Additional and significant silicide growth during heating and cooling of the wire was taken into account by using self consistent iteration procedure for ΔLn2 calculations. The resulted activation energy agrees well with previous results.

  9. Investigations of ion-irradiated uranium dioxide nuclear fuel with laser-assisted atom probe tomography

    NASA Astrophysics Data System (ADS)

    Valderrama, Billy

    Performance in commercial light water reactors is dictated by the ability of its fuel material, uranium dioxide (UO2), to transport heat generated during the fission process. It is widely known that the service lifetime is limited by irradiation-induced microstructural changes that degrade the thermal performance of UO2. Studying the role of complex, often interacting mechanisms that occur during the early stages of microstructural evolution presents a challenge. Phenomena of particular interest are the segregation of fission products to form bubbles and their resultant effect on grain boundary (GB) mobility, and the effect of irradiation on fuel stoichiometry. Each mechanism has a profound consequence on fuel thermal conductivity. Several advanced analytical techniques, such as transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, etc. have been used to study these mechanisms. However, they each have limitations and cannot individually provide the necessary information for deeper understanding. One technique that has been under utilized is atom probe tomography (APT), which has a unique ability to spatially resolve small-scale chemical variations. APT uses the principle of field ionization to evaporate surface ions for chemical analysis. For low electrical conductivity systems, a pulsed laser is used to thermally assist in the evaporation process. One factor complicating the analysis is that laser-material interactions are poorly understood for oxide materials and literature using this technique with UO2 is lacking. Therefore, an initial systematic study to identify the optimal conditions for the analysis of UO2 using laser-assisted APT was conducted. A comparative study on the evaporation behavior between CeO2 and UO2 was followed. CeO2 was chosen due to its technological relevancy and availability of comparative studies with laser-assisted APT. Dissimilar evaporation behavior between these materials was identified and attributed

  10. Chromium silicide formation by ion mixing

    NASA Technical Reports Server (NTRS)

    Shreter, U.; So, F. C. T.; Nicolet, M.-A.

    1984-01-01

    The formation of CrSi2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450 C for short times to form Si/CrSi2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 x 10 to the 15th per sq cm were used for mixing at temperatures between 20 and 300 C. Penetrating only the Cr/CrSi2 interface at temperatures above 150 C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi2 interface does not induce silicide growth. It is concluded that the formation of CrSi2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi2 interface.

  11. Challenges of nickel silicidation in CMOS technologies

    SciTech Connect

    Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet; Baumann, Frieder; Klymko, Nancy; Nummy, Karen; Sun, Bing; Jordan-Sweet, Jean; Yu, Jian; Zhu, Frank; Narasimha, Shreesh; Chudzik, Michael

    2015-04-01

    In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

  12. Synthesis and design of silicide intermetallic materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.

    1997-04-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has a number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.

  13. Plutonium and Uranium Atom Ratios and Activity Levels in Cochiti Lake Bottom Sediments Provided by Pueblo de Cochiti

    SciTech Connect

    Gallaher, B.M.; Efurd, D.W.; Rokop, D.J.; Benjamin, T.M.

    1999-05-01

    Historical operations at the Los Alamos National Laboratory have contaminated stream sediments with plutonium and other radionuclides. A small portion of these contaminated sediments has been carried by floods into the Rio Grande drainage system, eventually to be trapped by Cochiti Lake located on Pueblo de Cochiti lands approximately 8 km downstream of the Laboratory. In this study, lake bottom sediment samples provided by the Pueblo de Cochiti were analyzed by thermal ionization mass spectrometry to determine plutonium and uranium activity levels and isotopic atom ratios. This specialized analytical method allows us to take isotopic fingerprints of radionuclides found in the sediment and to determine how much plutonium and uranium came from the Laboratory and how much was deposited by worldwide fallout or is natural. Two distinct types of samples were processed: segments of a continuous vertical core of the entire accumulated sediment sequence and other samples from across the lake bottom at the water/sediment interface. Based on measurement of the {sup 240}Pu/{sup 239}Pu atom ratio, Laboratory-derived plutonium is present in eight of nine samples at the core site. On a depth-weighted basis, approximately one-half of the {sup 239}Pu and {sup 240}Pu came from early operations at the Laboratory; the remaining plutonium came from fallout dispersed by above-ground nuclear tests. In contrast to the core site, the samples from the other locations showed little or no evidence of Laboratory-derived plutonium, with more than 90 percent of the plutonium attributable to fallout. The overall amount of plutonium in all the samples is of the same magnitude as other reservoirs in the region. The net increase in plutonium over upstream reservoirs unaffected by Laboratory activities is a maximum of 0.014 pCi/g or 3.5 times. All of the samples reflect natural uranium compositions. Laboratory-derived uranium is not identifiable, presumably because the sediment contains abundant

  14. Hybrid interferometric/dispersive atomic spectroscopy of laser-induced uranium plasma

    NASA Astrophysics Data System (ADS)

    Morgan, Phyllis K.; Scott, Jill R.; Jovanovic, Igor

    2016-02-01

    An established optical emission spectroscopy technique, laser-induced breakdown spectroscopy (LIBS), holds promise for detection and rapid analysis of elements relevant for nuclear safeguards, nonproliferation, and nuclear power, including the measurement of isotope ratios. One such important application of LIBS is the measurement of uranium enrichment (235U/238U), which requires high spectral resolution (e.g., 25 pm for the 424.4 nm U II line). High-resolution dispersive spectrometers necessary for such measurements are typically bulky and expensive. We demonstrate the use of an alternative measurement approach, which is based on an inexpensive and compact Fabry-Perot etalon integrated with a low to moderate resolution Czerny-Turner spectrometer, to achieve the resolution needed for isotope selectivity of LIBS of uranium in ambient air. Spectral line widths of ~ 10 pm have been measured at a center wavelength 424.437 nm, clearly discriminating the natural from the highly enriched uranium.

  15. Understanding photoexcitation dynamics in a three-step photoionization of atomic uranium and measurement of photoexcitation and photoionization cross sections

    NASA Astrophysics Data System (ADS)

    Mandal, P. K.; Sahoo, A. C.; Das, R. C.; Shah, M. L.; Pulhani, A. K.; Manohar, K. G.; Dev, Vas

    2015-09-01

    Photoexcitation dynamics in a three-step photoionization of atomic uranium has been investigated using time-resolved two-color three-photon and delayed three-color three-photon photoionization signals. Investigations are carried out in an atomic beam of uranium coupled to a high-resolution time-of-flight mass spectrometer using three tunable pulsed dye lasers. Dependence of both the signals on the second-step laser photon fluence is studied. Excited-level-to-excited-level photoexcitation cross section and photoionization cross section from the second excited level are simultaneously determined by analyzing the two-color three-photon and three-color three-photon photoionization signals using population rate equation model. Using this methodology, photoexcitation and photoionization cross sections at seven values of the second-step laser wavelength have been measured. From the measured values of the photoexcitation cross sections, we have obtained excited-level-to-excited-level transition probabilities and compared these with the values reported in the literature.

  16. Microwave absorption properties of Ni/(C, silicides) nanocapsules

    PubMed Central

    2012-01-01

    The microwave absorption properties of Ni/(C, silicides) nanocapsules prepared by an arc discharge method have been studied. The composition and the microstructure of the Ni/(C, silicides) nanocapsules were determined by means of X-ray diffraction, X-ray photoelectric spectroscopy, and transmission electron microscope observations. Silicides, in the forms of SiOx and SiC, mainly exist in the shells of the nanocapsules and result in a large amount of defects at the ‘core/shell’ interfaces as well as in the shells. The complex permittivity and microwave absorption properties of the Ni/(C, silicides) nanocapsules are improved by the doped silicides. Compared with those of Ni/C nanocapsules, the positions of maximum absorption peaks of the Ni/(C, silicides) nanocapsules exhibit large red shifts. An electric dipole model is proposed to explain this red shift phenomenon. PMID:22548846

  17. In-source resonance ionization spectroscopy of high lying energy levels in atomic uranium

    NASA Astrophysics Data System (ADS)

    Raeder, Sebastian; Fies, Silke; Gottwald, Tina; Mattolat, Christoph; Rothe, Sebastian; Wendt, Klaus

    2010-02-01

    In-source resonance ionization spectroscopy of uranium has been carried out as preparation for the analysis of low contaminations of nuclear material in environmental samples via laser mass spectrometry. Using three-step resonance ionization spectroscopy, 86 levels of odd parity in the energy range from 37,200-38,650 cm - 1 were studied, 51 of these levels were previously unknown. Suitable excitation schemes for analytic applications are discussed.

  18. Fusion silicide coatings for tantalum alloys.

    NASA Technical Reports Server (NTRS)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    Calculation of the performance of fusion silicide coatings under simulated atmospheric reentry conditions to a maximum temperature of 1810 K (2800 F). Both recently developed and commercially available coatings are included. Data are presented on oxidation rate with and without intentional defecting, the influence of the coatings on the ductile-brittle bend transition temperature, and the mechanical properties. Coatings appear capable of affording protection for at least 100 simulated cycles to 2600 F and 63 cycles to 2800 F.

  19. Hybrid interferometric/dispersive atomic spectroscopy of laser-induced uranium plasma

    SciTech Connect

    Morgan, Phyllis K.; Scott, Jill R.; Jovanovic, Igor

    2015-12-19

    An established optical emission spectroscopy technique, laser-induced breakdown spectroscopy (LIBS), holds promise for detection and rapid analysis of elements relevant for nuclear safeguards, nonproliferation, and nuclear power, including the measurement of isotope ratios. One such important application of LIBS is the measurement of uranium enrichment (235U/238U), which requires high spectral resolution (e.g., 25 pm for the 424.4 nm U II line). High-resolution dispersive spectrometers necessary for such measurements are typically bulky and expensive. We demonstrate the use of an alternative measurement approach, which is based on an inexpensive and compact Fabry–Perot etalon integrated with a low to moderate resolution Czerny–Turner spectrometer, to achieve the resolution needed for isotope selectivity of LIBS of uranium in ambient air. Furthermore, spectral line widths of ~ 10 pm have been measured at a center wavelength 424.437 nm, clearly discriminating the natural from the highly enriched uranium.

  20. Hybrid interferometric/dispersive atomic spectroscopy of laser-induced uranium plasma

    DOE PAGESBeta

    Morgan, Phyllis K.; Scott, Jill R.; Jovanovic, Igor

    2015-12-19

    An established optical emission spectroscopy technique, laser-induced breakdown spectroscopy (LIBS), holds promise for detection and rapid analysis of elements relevant for nuclear safeguards, nonproliferation, and nuclear power, including the measurement of isotope ratios. One such important application of LIBS is the measurement of uranium enrichment (235U/238U), which requires high spectral resolution (e.g., 25 pm for the 424.4 nm U II line). High-resolution dispersive spectrometers necessary for such measurements are typically bulky and expensive. We demonstrate the use of an alternative measurement approach, which is based on an inexpensive and compact Fabry–Perot etalon integrated with a low to moderate resolution Czerny–Turnermore » spectrometer, to achieve the resolution needed for isotope selectivity of LIBS of uranium in ambient air. Furthermore, spectral line widths of ~ 10 pm have been measured at a center wavelength 424.437 nm, clearly discriminating the natural from the highly enriched uranium.« less

  1. Crystal structure of the ternary silicide Gd2Re3Si5.

    PubMed

    Fedyna, Vitaliia; Kozak, Roksolana; Gladyshevskii, Roman

    2014-12-01

    A single crystal of the title compound, the ternary silicide digadolinium trirhenium penta-silicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubo-octa-hedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square anti-prisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re-Re distance of 2.78163 (5) Å and isolated squares with an Re-Re distance of 2.9683 (6) Å. PMID:25552967

  2. Crystal structure of the ternary silicide Gd2Re3Si5

    PubMed Central

    Fedyna, Vitaliia; Kozak, Roksolana; Gladyshevskii, Roman

    2014-01-01

    A single crystal of the title compound, the ternary silicide digadolinium trirhenium penta­silicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubo­octa­hedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square anti­prisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re—Re distance of 2.78163 (5) Å and isolated squares with an Re—Re distance of 2.9683 (6) Å. PMID:25552967

  3. Mössbauer spectroscopy study of surfactant sputtering induced Fe silicide formation on a Si surface

    NASA Astrophysics Data System (ADS)

    Beckmann, C.; Zhang, K.; Hofsäss, H.; Brüsewitz, C.; Vetter, U.; Bharuth-Ram, K.

    2015-12-01

    The formation of Fe silicides in surface ripple patterns, generated by erosion of a Si surface with keV Ar and Xe ions and simultaneous co-deposition of Fe, was investigated with conversion electron Mössbauer spectroscopy, atomic force microscopy and Rutherford backscattering spectrometry. For the dot and ripple patterns studied, we find an average Fe concentration in the irradiated layer between 6 and 25 at.%. The Mössbauer spectra clearly show evidence of the formation of Fe disilicides with Fe content close to 33 at.%, but very little evidence of the formation of metallic Fe particles. The results support the process of ion-induced phase separation toward an amorphous Fe disilicide phase as pattern generation mechanism. The observed amorphous phase is in agreement with thermodynamic calculations of amorphous Fe silicides.

  4. Raman scattering from rapid thermally annealed tungsten silicide

    NASA Technical Reports Server (NTRS)

    Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.

    1987-01-01

    Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

  5. Formation, structure, and orientation of gold silicide on gold surfaces

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1976-01-01

    The formation of gold silicide on Au films evaporated onto Si(111) surfaces is studied by Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Surface condition, film thickness, deposition temperature, annealing temperature, and heating rate during annealing are varied. Several oriented crystalline silicide layers are observed.

  6. Synthesis of iron silicides starting with Fe/Si multilayers

    NASA Astrophysics Data System (ADS)

    Saul, C. Ketzer; Amaral, L.; Schreiner, W. H.

    1994-12-01

    The iron silicides are considered key materials for silicon integrated optoelectronic devices. This report describes the synthesis of the iron silicides starting with e-beam evaporated multilayered Fe/Si samples. Samples with two chemical wavelengths were studied upon annealing and ion beam mixing. The characterization included X-ray diffraction, CEMS and Rutherford backscattering.

  7. Thermal Stability of Magnesium Silicide/Nickel Contacts

    NASA Astrophysics Data System (ADS)

    de Boor, J.; Droste, D.; Schneider, C.; Janek, J.; Mueller, E.

    2016-06-01

    Magnesium silicide-based materials are a very promising class of thermoelectric materials with excellent potential for thermoelectric waste heat recovery. For the successful application of magnesium silicide-based thermoelectric generators, the development of long-term stable contacts with low contact resistance is as important as material optimization. We have therefore studied the suitability of Ni as a contact material for magnesium silicide. Co-sintering of magnesium silicide and Ni leads to the formation of a stable reaction layer with low electrical resistance. In this paper we show that the contacts retain their low electrical contact resistance after annealing at temperatures up to 823 K for up to 168 h. By employing scanning electron microscope analysis and time-of-flight (ToF)-secondary ion mass spectrometry, we can further show that elemental diffusion is occurring to a very limited extent. This indicates long-term stability under practical operation conditions for magnesium silicide/nickel contacts.

  8. Silicide coating on refractory metals in molten salt

    NASA Astrophysics Data System (ADS)

    Tatemoto, K.; Ono, Y.; Suzuki, R. O.

    2005-02-01

    For better oxidation resistance of refractory metals in air, the electroless coating of silicide in the molten salt was developed in open air at 973 1173 K. The molten salt consists of NaCl, KCl, Na2SiF6 and Si powder, where the proportional reaction between Si and Si4+ ions forms Si2+ ions. Si2+ deposits on the metal substrate and forms the metal silicide. The deposited silicide layers were classified into two categories depending on the metal substrates: (1) Nb, Mo and Cr mainly formed silicon-rich disilicide (MSi2) layer. (2) Fe, Ni and Co formed silicon-poor silicide layer (MSin, n<2), such as Fe3Si. This difference was described by the diffusivity of Si through the silicide layer into the metal.

  9. Influence of instrument conditions on the evaporation behavior of uranium dioxide with UV laser-assisted atom probe tomography

    SciTech Connect

    Valderrama, B.; Henderson, H.B.; Gan, J.; Manuel, M.V.

    2015-04-01

    Atom probe tomography (APT) provides the ability to detect subnanometer chemical variations spatially, with high accuracy. However, it is known that compositional accuracy can be affected by experimental conditions. A study of the effect of laser energy, specimen base temperature, and detection rate is performed on the evaporation behavior of uranium dioxide (UO2). In laser-assisted mode, tip geometry and standing voltage also contribute to the evaporation behavior. In this investigation, it was determined that modifying the detection rate and temperature did not affect the evaporation behavior as significantly as laser energy. It was also determined that three laser evaporation regimes are present in UO2. Very low laser energy produces a behavior similar to DC-field evaporation, moderate laser energy produces the desired laser-assisted field evaporation characteristic and high laser energy induces thermal effects, negatively altering the evaporation behavior. The need for UO2 to be analyzed under moderate laser energies to produce accurate stoichiometry distinguishes it from other oxides. The following experimental conditions providing the best combination of mass resolving power, accurate stoichiometry, and uniform evaporation behavior: 50 K, 10 pJ laser energy, a detection rate of 0.003 atoms per pulse, and a 100 kHz repetition rate.

  10. Influence of instrument conditions on the evaporation behavior of uranium dioxide with UV laser-assisted atom probe tomography

    NASA Astrophysics Data System (ADS)

    Valderrama, B.; Henderson, H. B.; Gan, J.; Manuel, M. V.

    2015-04-01

    Atom probe tomography (APT) provides the ability to detect subnanometer chemical variations spatially, with high accuracy. However, it is known that compositional accuracy can be affected by experimental conditions. A study of the effect of laser energy, specimen base temperature, and detection rate is performed on the evaporation behavior of uranium dioxide (UO2). In laser-assisted mode, tip geometry and standing voltage also contribute to the evaporation behavior. In this investigation, it was determined that modifying the detection rate and temperature did not affect the evaporation behavior as significantly as laser energy. It was also determined that three laser evaporation regimes are present in UO2. Very low laser energy produces a behavior similar to DC-field evaporation, moderate laser energy produces the desired laser-assisted field evaporation characteristic and high laser energy induces thermal effects, negatively altering the evaporation behavior. The need for UO2 to be analyzed under moderate laser energies to produce accurate stoichiometry distinguishes it from other oxides. The following experimental conditions providing the best combination of mass resolving power, accurate stoichiometry, and uniform evaporation behavior: 50 K, 10 pJ laser energy, a detection rate of 0.003 atoms per pulse, and a 100 kHz repetition rate.

  11. First-principles study on the interaction of nitrogen atom with α–uranium: From surface adsorption to bulk diffusion

    SciTech Connect

    Su, Qiulei; Deng, Huiqiu E-mail: hqdeng@gmail.com; Xiao, Shifang; Li, Xiaofan; Hu, Wangyu; Ao, Bingyun; Chen, Piheng

    2014-04-28

    Experimental studies of nitriding on uranium surfaces show that the modified layers provide considerable protection against air corrosion. The bimodal distribution of nitrogen is affected by both its implantation and diffusion, and the diffusion of nitrogen during implantation is also governed by vacancy trapping. In the present paper, nitrogen adsorption, absorption, diffusion, and vacancy trapping on the surface of and in the bulk of α–uranium are studied with a first-principles density functional theory approach and the climbing image nudged elastic band method. The calculated results indicate that, regardless of the nitrogen coverage, a nitrogen atom prefers to reside at the hollow1 site and octahedral (Oct) site on and below the surface, respectively. The lowest energy barriers for on-surface and penetration diffusion occur at a coverage of 1/2 monolayer. A nitrogen atom prefers to occupy the Oct site in bulk α–uranium. High energy barriers are observed during the diffusion between neighboring Oct sites. A vacancy can capture its nearby interstitial nitrogen atom with a low energy barrier, providing a significant attractive nitrogen-vacancy interaction at the trapping center site. This study provides a reference for understanding the nitriding process on uranium surfaces.

  12. Environmental site description for a Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) production plant at the Paducah Gaseous Diffusion Plant site

    SciTech Connect

    Marmer, G.J.; Dunn, C.P.; Moeller, K.L.; Pfingston, J.M.; Policastro, A.J.; Yuen, C.R.; Cleland, J.H.

    1991-09-01

    Uranium enrichment in the United States has utilized a diffusion process to preferentially enrich the U-235 isotope in the uranium product. The U-AVLIS process is based on electrostatic extraction of photoionized U-235 atoms from an atomic vapor stream created by electron-beam vaporization of uranium metal alloy. The U-235 atoms are ionized when precisely tuned laser light -- of appropriate power, spectral, and temporal characteristics -- illuminates the uranium vapor and selectively photoionizes the U-235 isotope. A programmatic document for use in screening DOE site to locate a U-AVLIS production plant was developed and implemented in two parts. The first part consisted of a series of screening analyses, based on exclusionary and other criteria, that identified a reasonable number of candidate sites. These sites were subjected to a more rigorous and detailed comparative analysis for the purpose of developing a short list of reasonable alternative sites for later environmental examination. This environmental site description (ESD) provides a detailed description of the PGDP site and vicinity suitable for use in an environmental impact statement (EIS). The report is based on existing literature, data collected at the site, and information collected by Argonne National Laboratory (ANL) staff during a site visit. 65 refs., 15 tabs.

  13. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  14. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1997-12-02

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  15. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1996-12-03

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  16. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1996-12-03

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  17. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1998-07-14

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  18. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1998-07-14

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  19. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1997-12-02

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  20. Boron modified molybdenum silicide and products

    DOEpatents

    Meyer, M.K.; Akinc, M.

    1999-02-02

    A boron-modified molybdenum silicide material is disclosed having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo{sub 5}Si{sub 3} phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi{sub 2} heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo{sub 5}Si{sub 3} for structural integrity. 7 figs.

  1. Boron modified molybdenum silicide and products

    DOEpatents

    Meyer, Mitchell K.; Akinc, Mufit

    1999-02-02

    A boron-modified molybdenum silicide material having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo.sub.5 Si.sub.3 phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi.sub.2 heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo.sub.5 Si.sub.3 for structural integrity.

  2. Molybdenum silicide based materials and their properties

    SciTech Connect

    Yao, Z.; Stiglich, J.; Sudarshan, T.S.

    1999-06-01

    Molybdenum disilicide (MoSi{sub 2}) is a promising candidate material for high temperature structural applications. It is a high melting point (2030 C) material with excellent oxidation resistance and a moderate density (6.24 g/cm{sup 3}). However, low toughness at low temperatures and high creep rates at elevated temperatures have hindered its commercialization in structural applications. Much effort has been invested in MoSi{sub 2} composites as alternatives to pure molybdenum disilicide for oxidizing and aggressive environments. Molybdenum disilicide-based heating elements have been used extensively in high-temperature furnaces. The low electrical resistance of silicides in combination with high thermal stability, electron-migration resistance, and excellent diffusion-barrier characteristics is important for microelectronic applications. Projected applications of MoSi{sub 2}-based materials include turbine airfoils, combustion chamber components in oxidizing environments, missile nozzles, molten metal lances, industrial gas burners, diesel engine glow plugs, and materials for glass processing. On this paper, synthesis, fabrication, and properties of the monolithic and composite molybdenum silicides are reviewed.

  3. ITEP MEVVA ion beam for rhenium silicide production

    SciTech Connect

    Kulevoy, T.; Seleznev, D.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Yakushin, P.; Petrenko, S.; Gerasimenko, N.; Medetov, N.; Zaporozhan, O.

    2010-02-15

    The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

  4. Silicide/Silicon Heterointerfaces, Reaction Kinetics and Ultra-short Channel Devices

    NASA Astrophysics Data System (ADS)

    Tang, Wei

    Nickel silicide is one of the electrical contact materials widely used on very large scale integration (VLSI) of Si devices in microelectronic industry. This is because the silicide/silicon interface can be formed in a highly controlled manner to ensure reproducibility of optimal structural and electrical properties of the metal-Si contacts. These advantages can be inherited to Si nanowire (NW) field-effect transistors (FET) device. Due to the technological importance of nickel silicides, fundamental materials science of nickel silicides formation (Ni-Si reaction), especially in nanoscale, has raised wide interest and stimulate new insights and understandings. In this dissertation, in-situ transmission electron microscopy (TEM) in combination with FET device characterization will be demonstrated as useful tools in nano-device fabrication as well as in gaining insights into the process of nickel silicide formation. The shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) has been demonstrated by controlled reaction with Ni leads on an in-situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 ºC. NiSi2 is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (microA/microm) and a maximum transconductance of 430 (microS/microm) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of (17 nm -- 3.6 microm). Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs

  5. A density functional study of atomic oxygen and carbon adsorptions on (100) surface of γ-Uranium

    NASA Astrophysics Data System (ADS)

    Dholabhai, Pratik P.; Ray, Asok K.

    2007-04-01

    Oxygen and carbon adsorptions on a γ-Uranium (U) (100) surface have been studied at both non-spin-polarized (NSP) and spin-polarized (SP) levels using the generalized gradient approximation of the density functional theory (GGA-DFT) with Perdew and Wang (PW) functionals. For oxygen adsorption, the bridge position of (100) surface is found to be the most favourable site with chemisorption energy (CE) of 7.887 eV for the NSP case, and 7.965 eV for the SP case. The distances of the oxygen adatom from the U surface are found to be 1.19Å and 1.22 Å for the NSP and SP cases, respectively. The magnetic moment for this most favourable site is found to be 0.167μB per atom. For carbon adsorption, the centre position of (100) surface is found to be most favourable site with CE of 7.816 eV for the NSP case, and 7.895 eV for the SP case. The distances of the carbon adatom from the U surface are found to be 0.62 and 0.52 Å for the NSP and SP cases, respectively. The magnetic moment for this most favourable site is found to be 0.084μB per atom. The hybridization between the O 2p orbitals and U 5f orbitals is found to be rather weak but the hybridization between the C 2p orbitals and U 5f orbitals is observed to be strong.

  6. Microalloying of transition metal silicides by mechanical activation and field-activated reaction

    DOEpatents

    Munir, Zuhair A.; Woolman, Joseph N.; Petrovic, John J.

    2003-09-02

    Alloys of transition metal suicides that contain one or more alloying elements are fabricated by a two-stage process involving mechanical activation as the first stage and densification and field-activated reaction as the second stage. Mechanical activation, preferably performed by high-energy planetary milling, results in the incorporation of atoms of the alloying element(s) into the crystal lattice of the transition metal, while the densification and field-activated reaction, preferably performed by spark plasma sintering, result in the formation of the alloyed transition metal silicide. Among the many advantages of the process are its ability to accommodate materials that are incompatible in other alloying methods.

  7. Silicon Framework-Based Lithium Silicides at High Pressures.

    PubMed

    Zhang, Shoutao; Wang, Yanchao; Yang, Guochun; Ma, Yanming

    2016-07-01

    The bandgap and optical properties of diamond silicon (Si) are not suitable for many advanced applications such as thin-film photovoltaic devices and light-emitting diodes. Thus, finding new Si allotropes with better bandgap and optical properties is desirable. Recently, a Si allotrope with a desirable bandgap of ∼1.3 eV was obtained by leaching Na from NaSi6 that was synthesized under high pressure [Nat. Mater. 2015, 14, 169], paving the way to finding new Si allotropes. Li is isoelectronic with Na, with a smaller atomic core and comparable electronegativity. It is unknown whether Li silicides share similar properties, but it is of considerable interest. Here, a swarm intelligence-based structural prediction is used in combination with first-principles calculations to investigate the chemical reactions between Si and Li at high pressures, where seven new compositions (LiSi4, LiSi3, LiSi2, Li2Si3, Li2Si, Li3Si, and Li4Si) become stable above 8.4 GPa. The Si-Si bonding patterns in these compounds evolve with increasing Li content sequentially from frameworks to layers, linear chains, and eventually isolated Si ions. Nearest-neighbor Si atoms, in Cmmm-structured LiSi4, form covalent open channels hosting one-dimensional Li atom chains, which have similar structural features to NaSi6. The analysis of integrated crystal orbital Hamilton populations reveals that the Si-Si interactions are mainly responsible for the structural stability. Moreover, this structure is dynamically stable even at ambient pressure. Our results are also important for understanding the structures and electronic properties of Li-Si binary compounds at high pressures. PMID:27302244

  8. Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

    SciTech Connect

    El-Atwani, Osman; Gonderman, Sean; Suslova, Anastassiya; Fowler, Justin; El-Atwani, Mohamad; DeMasi, Alexander; Ludwig, Karl; Paul Allain, Jean

    2013-03-28

    We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for a time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.

  9. A promising new thermoelectric material - Ruthenium silicide

    NASA Technical Reports Server (NTRS)

    Vining, Cronin B.; Mccormack, Joseph A.; Zoltan, Andrew; Zoltan, Leslie D.

    1991-01-01

    Experimental and theoretical efforts directed toward increasing thermoelectric figure of merit values by a factor of 2 or 3 have been encouraging in several respects. An accurate and detailed theoretical model developed for n-type silicon-germanium (SiGe) indicates that ZT values several times higher than currently available are expected under certain conditions. These new, high ZT materials are expected to be significantly different from SiGe, but not unreasonably so. Several promising candidate materials have been identified which may meet the conditions required by theory. One such candidate, ruthenium silicide, currently under development at JPL, has been estimated to have the potential to exhibit figure of merit values 4 times higher than conventional SiGe materials. Recent results are summarized.

  10. Silicide formation process in ultra-thin Ni-silicide film for advanced semiconductor devices: mechanism of NiSi2 formation at low temperature

    NASA Astrophysics Data System (ADS)

    Ikarashi, N.; Masuzaki, K.

    2011-11-01

    Atomic-resolution high-angle annular dark-field scanning-transmission electron microscopy and ab-initio calculations were used to reveal the reaction involved in the formation of ultra-thin Ni silicide film at 300°C. We found that a Ni-adamantane structure, in which Ni atoms occupy the tetrahedral interstitial voids of Si, forms at the initial stage of the reaction. We also found that the adamantane structure is under considerable compressive stress due to lattice-mismatch at the adamantane structure-Si interface (5.6%). Then, NiSi2 forms just beneath the Ni-adamantane structure at a much lower temperature than the NiSi2 formation temperature reported for the reaction between a Ni layer and Si substrate (800°C). Our analyses strongly suggest that the Ni-adamantane structure acts as a precursor in the formation of NiSi2.

  11. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization (ATRP) from Poly(vinyl chloride)- co -chlorinated Poly(vinyl chloride) (PVC- co -CPVC) Fiber

    DOE PAGESBeta

    Brown, Suree; Yue, Yanfeng; Kuo, Li-Jung; Mehio, Nada; Li, Meijun; Gill, Gary; Tsouris, Costas; Mayes, Richard T.; Saito, Tomonori; Dai, Sheng

    2016-03-11

    The need to secure future supplies of energy attracts researchers in several countries to a vast resource of nuclear energy fuel: uranium in seawater (estimated at 4.5 billion tons in seawater). In this study, we developed effective adsorbent fibers for the recovery of uranium from seawater via atom-transfer radical polymerization (ATRP) from a poly-(vinyl chloride)-co-chlorinated poly(vinyl chloride) (PVC-co-CPVC) fiber. ATRP was employed in the surface graft polymerization of acrylonitrile (AN) and tert-butyl acrylate (tBA), precursors for uranium-interacting functional groups, from PVC-co-CPVC fiber. The [tBA]/[AN] was systematically varied to identify the optimal ratio between hydrophilic groups (from tBA) and uranyl-binding ligandsmore » (from AN). The best performing adsorbent fiber, the one with the optimal [tBA]/[AN] ratio and a high degree of grafting (1390%), demonstrated uranium adsorption capacities that are significantly greater than those of the Japan Atomic Energy Agency (JAEA) reference fiber in natural seawater tests (2.42 3.24 g/kg in 42 days of seawater exposure and 5.22 g/kg in 49 days of seawater exposure, versus 1.66 g/kg in 42 days of seawater exposure and 1.71 g/kg in 49 days of seawater exposure for JAEA). Lastly, adsorption of other metal ions from seawater and their corresponding kinetics were also studied. The grafting of alternative monomers for the recovery of uranium from seawater is now under development by this versatile technique of ATRP.« less

  12. A poly(acrylonitrile)-functionalized porous aromatic framework synthesized by atom-transfer radical polymerization for the extraction of uranium from seawater

    DOE PAGESBeta

    Yue, Yanfeng; Zhang, Chenxi; Tang, Qing; Mayes, Richard T.; Liao, Wei -Po; Liao, Chen; Tsouris, Costas; Stankovich, Joseph J.; Chen, Jihua; Hensley, Dale K.; et al

    2015-10-30

    In order to ensure a sustainable reserve of fuel for nuclear power generation, tremendous research efforts have been devoted to developing advanced sorbent materials for extracting uranium from seawater. In this work, a porous aromatic framework (PAF) was surface-functionalized with poly(acrylonitrile) through atom-transfer radical polymerization (ATRP). Batches of this adsorbent were conditioned with potassium hydroxide (KOH) at room temperature or 80 °C prior to contact with a uranium-spiked seawater simulant, with minimal differences in uptake observed as a function of conditioning temperature. A maximum capacity of 4.81 g-U/kg-ads was obtained following 42 days contact with uranium-spiked filtered environmental seawater, whichmore » demonstrates a comparable adsorption rate. A kinetic investigation revealed extremely rapid uranyl uptake, with more than 80% saturation reached within 14 days. Furthermore, relying on the semiordered structure of the PAF adsorbent, density functional theory (DFT) calculations reveal cooperative interactions between multiple adsorbent groups yield a strong driving force for uranium binding.« less

  13. A poly(acrylonitrile)-functionalized porous aromatic framework synthesized by atom-transfer radical polymerization for the extraction of uranium from seawater

    SciTech Connect

    Yue, Yanfeng; Zhang, Chenxi; Tang, Qing; Mayes, Richard T.; Liao, Wei -Po; Liao, Chen; Tsouris, Costas; Stankovich, Joseph J.; Chen, Jihua; Hensley, Dale K.; Abney, Carter W.; Jiang, De-en; Brown, Suree; Dai, Sheng

    2015-10-30

    In order to ensure a sustainable reserve of fuel for nuclear power generation, tremendous research efforts have been devoted to developing advanced sorbent materials for extracting uranium from seawater. In this work, a porous aromatic framework (PAF) was surface-functionalized with poly(acrylonitrile) through atom-transfer radical polymerization (ATRP). Batches of this adsorbent were conditioned with potassium hydroxide (KOH) at room temperature or 80 °C prior to contact with a uranium-spiked seawater simulant, with minimal differences in uptake observed as a function of conditioning temperature. A maximum capacity of 4.81 g-U/kg-ads was obtained following 42 days contact with uranium-spiked filtered environmental seawater, which demonstrates a comparable adsorption rate. A kinetic investigation revealed extremely rapid uranyl uptake, with more than 80% saturation reached within 14 days. Furthermore, relying on the semiordered structure of the PAF adsorbent, density functional theory (DFT) calculations reveal cooperative interactions between multiple adsorbent groups yield a strong driving force for uranium binding.

  14. Determination of trace elements in uranium by inductively coupled plasma-atomic emission spectrometry using Kalman filtering

    SciTech Connect

    Veen, E.H. van; de Loos-Vollebregt, T.C. de; Wassink, A.P.; Kalter, H.

    1992-08-01

    Trace impurities in uranium hexafluoride were analyzed by ICP-AES. The data were reduced using a Kalman filtering technique. Normally, multiple extraction steps are required for this analysis using conventional ICP-AES.

  15. Formation, optical properties, and electronic structure of thin Yb silicide films on Si(111)

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Maslov, A. M.; Polyarnyi, V. O.

    2005-06-01

    Continuous very thin (2.5-3.0 nm) and thin (16-18 nm) ytterbium suicide films with some pinhole density (3×107- 1×108 cm-2) have been formed on Si(111) by solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE) growth methods on templates. The stoichiometric ytterbium suicide (YbSi2) formation has shown in SPE grown films by AES and EELS data. Very thin Yb suicide films grown by RDE method had the silicon enrichment in YbSi2 suicide composition. The analysis of LEED data and AFM imaging has shown that ytterbium suicide films had non-oriented blocks with the polycrystalline structure. The analysis of scanning region length dependencies of the root mean square roughness deviation (σR(L)) for grown suicide films has shown that the formation of ytterbium suicide in SPE and RDE growth methods is determined by the surface diffusion of Yb atoms during the three-dimensional growth process. Optical functions (n, k, α, ɛ1, ɛ2, Im ɛ1-1, neff, ɛeff) of ytterbium silicide films grown on Si(1 1 1) have been calculated from transmittance and reflectance spectra in the energy range of 0.1-6.2 eV. Two nearly discrete absorption bands have been observed in the electronic structure of Yb silicide films with different composition, which connected with interband transitions on divalent and trivalent Yb states. It was established that the reflection coefficient minimum in R-spectra at energies higher 4.2 eV corresponds to the state density minimum in Yb suicide between divalent and trivalent Yb states. It was shown from optical data that Yb silicide films have the semi-metallic properties with low state densities at energies less 0.4 eV and high state densities at 0.5-2.5 eV.

  16. Valence Band Control of Metal Silicide Films via Stoichiometry.

    PubMed

    Streller, Frank; Qi, Yubo; Yang, Jing; Mangolini, Filippo; Rappe, Andrew M; Carpick, Robert W

    2016-07-01

    The unique electronic and mechanical properties of metal silicide films render them interesting for advanced materials in plasmonic devices, batteries, field-emitters, thermoelectric devices, transistors, and nanoelectromechanical switches. However, enabling their use requires precisely controlling their electronic structure. Using platinum silicide (PtxSi) as a model silicide, we demonstrate that the electronic structure of PtxSi thin films (1 ≤ x ≤ 3) can be tuned between metallic and semimetallic by changing the stoichiometry. Increasing the silicon content in PtxSi decreases the carrier density according to valence band X-ray photoelectron spectroscopy and theoretical density of states (DOS) calculations. Among all PtxSi phases, Pt3Si offers the highest DOS due to the modest shift of the Pt5d manifold away from the Fermi edge by only 0.5 eV compared to Pt, rendering it promising for applications. These results, demonstrating tunability of the electronic structure of thin metal silicide films, suggest that metal silicides can be designed to achieve application-specific electronic properties. PMID:27322019

  17. Hafnium silicide formation on Si(100) upon annealing

    SciTech Connect

    Siervo, A. de; Fluechter, C. R.; Weier, D.; Schuermann, M.; Dreiner, S.; Westphal, C.; Carazzolle, M. F.; Pancotti, A.; Landers, R.; Kleiman, G. G.

    2006-08-15

    High dielectric constant materials, such as HfO{sub 2}, have been extensively studied as alternatives to SiO{sub 2} in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO{sub 2}. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi{sub 2}), which starts to crystallize when the annealing temperature is higher than 550 deg. C.

  18. Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

    PubMed Central

    2013-01-01

    Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22℃ to 70℃; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%℃ to 0.6%/℃ for forward bias and around 2.5%/℃ for reverse bias of the diodes. PMID:23594606

  19. Anomalous frequency dependent diamagnetism in metal silicide

    NASA Astrophysics Data System (ADS)

    Dahal, Ashutosh; Gunasekera, Jagat; Harriger, Leland; Singh, David J.; Singh, Deepak K.; Leland Harriger Collaboration

    Discovery of superconductivity in PbO-type FeSe has generated a lot of interest. Among the samples we synthesize with similar structure, NiSi has showed anomalous but very interesting results. Nickel silicides are important electronic materials that have been used as contacts for field effect transistors, as interconnects and in nanoelectronic devices. The magnetic properties of NiSi are not well known, however. In this presentation, we report a highly unusual magnetic phenomenon in NiSi. The ac susceptibility measurements on NiSi reveal strong frequency dependence of static and dynamic susceptibilities that are primarily diamagnetic at room temperature. The static susceptibility is found to exhibit a strong frequency dependence of the diamagnetic response below 100K, while dynamic susceptibility showed peak type feature at 10KHz frequency around 50K. Detailed neutron scattering measurements on high quality powder sample of NiSi on SPINS cold spectrometer further revealed an inelastic peak around 1.5meV, even though no magnetic order is detected. The inelastic peak dissipates above 100K, which is where the static susceptibility starts to diverge with frequency. Research is supported by U.S. Department of Energy, Office of Basic Energy Sciences under Grant No. DE-SC0014461.

  20. Rate Theory Modeling and Simulations of Silicide Fuel at LWR Conditions

    SciTech Connect

    Miao, Yinbin; Ye, Bei; Mei, Zhigang; Hofman, Gerard; Yacout, Abdellatif

    2015-12-10

    Uranium silicide (U3Si2) fuel has higher thermal conductivity and higher uranium density, making it a promising candidate for the accident-tolerant fuel (ATF) used in light water reactors (LWRs). However, previous studies on the fuel performance of U3Si2, including both experimental and computational approaches, have been focusing on the irradiation conditions in research reactors, which usually involve low operation temperatures and high fuel burnups. Thus, it is important to examine the fuel performance of U3Si2 at typical LWR conditions so as to evaluate the feasibility of replacing conventional uranium dioxide fuel with this silicide fuel material. As in-reactor irradiation experiments involve significant time and financial cost, it is appropriate to utilize modeling tools to estimate the behavior of U3Si2 in LWRs based on all those available research reactor experimental references and state-of-the-art density functional theory (DFT) calculation capabilities at the early development stage. Hence, in this report, a comprehensive investigation of the fission gas swelling behavior of U3Si2 at LWR conditions is introduced. The modeling efforts mentioned in this report was based on the rate theory (RT) model of fission gas bubble evolution that has been successfully applied for a variety of fuel materials at devious reactor conditions. Both existing experimental data and DFT-calculated results were used for the optimization of the parameters adopted by the RT model. Meanwhile, the fuel-cladding interaction was captured by the coupling of the RT model with simplified mechanical correlations. Therefore, the swelling behavior of U3Si2 fuel and its consequent interaction with cladding in LWRs was predicted by the rate theory modeling, providing valuable information for the development of U3Si2 fuel as an accident

  1. ZPR-3 Assembly 6F : A spherical assembly of highly enriched uranium, depleted uranium, aluminum and steel with an average {sup 235}U enrichment of 47 atom %.

    SciTech Connect

    Lell, R. M.; McKnight, R. D; Schaefer, R. W.; Nuclear Engineering Division

    2010-09-30

    Over a period of 30 years, more than a hundred Zero Power Reactor (ZPR) critical assemblies were constructed at Argonne National Laboratory. The ZPR facilities, ZPR-3, ZPR-6, ZPR-9 and ZPPR, were all fast critical assembly facilities. The ZPR critical assemblies were constructed to support fast reactor development, but data from some of these assemblies are also well suited for nuclear data validation and to form the basis for criticality safety benchmarks. A number of the Argonne ZPR/ZPPR critical assemblies have been evaluated as ICSBEP and IRPhEP benchmarks. Of the three classes of ZPR assemblies, engineering mockups, engineering benchmarks and physics benchmarks, the last group tends to be most useful for criticality safety. Because physics benchmarks were designed to test fast reactor physics data and methods, they were as simple as possible in geometry and composition. The principal fissile species was {sup 235}U or {sup 239}Pu. Fuel enrichments ranged from 9% to 95%. Often there were only one or two main core diluent materials, such as aluminum, graphite, iron, sodium or stainless steel. The cores were reflected (and insulated from room return effects) by one or two layers of materials such as depleted uranium, lead or stainless steel. Despite their more complex nature, a small number of assemblies from the other two classes would make useful criticality safety benchmarks because they have features related to criticality safety issues, such as reflection by soil-like material. ZPR-3 Assembly 6 consisted of six phases, A through F. In each phase a critical configuration was constructed to simulate a very simple shape such as a slab, cylinder or sphere that could be analyzed with the limited analytical tools available in the 1950s. In each case the configuration consisted of a core region of metal plates surrounded by a thick depleted uranium metal reflector. The average compositions of the core configurations were essentially identical in phases A - F. ZPR-3

  2. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    NASA Technical Reports Server (NTRS)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  3. Formation of cobalt silicide by ion beam mixing

    NASA Astrophysics Data System (ADS)

    Min, Ye; Burte, Edmund P.; Ryssel, Heiner

    1991-07-01

    The formation of cobalt silicides by arsenic ion implantation through a cobalt film which causes a mixing of the metal with the silicon substrate was investigated. Furthermore, cobalt suicides were formed by rapid thermal annealing (RTA). Sheet resistance and silicide phases of implanted Co/Si samples depend on the As dose. Ion beam mixing at doses higher than 5 × 10 15 cm -2 and RTA at temperatures T ⩾ 900° C result in almost equal values of Rs. RBS and XRD spectra of these samples illustrate the formation of a homogeneous CoSi 2 layer. Significant lateral growth of cobalt silicide beyond the edge of patterned SiO 2 was observed in samples which were only subjected to an RTA process ( T ⩾ 900 ° C), while this lateral suicide growth could be reduced efficiently by As implantation prior to RTA.

  4. Pyramidal structural defects in erbium silicide thin films

    NASA Astrophysics Data System (ADS)

    Tan, Eu Jin; Bouville, Mathieu; Chi, Dong Zhi; Pey, Kin Leong; Lee, Pooi See; Srolovitz, David J.; Tung, Chih Hang

    2006-01-01

    Pyramidal structural defects, 5-8μm wide, have been discovered in thin films of epitaxial ErSi2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800°C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.

  5. Prediction of Stable Ruthenium Silicides from First-Principles Calculations: Stoichiometries, Crystal Structures, and Physical Properties.

    PubMed

    Zhang, Chuanzhao; Kuang, Xiaoyu; Jin, Yuanyuan; Lu, Cheng; Zhou, Dawei; Li, Peifang; Bao, Gang; Hermann, Andreas

    2015-12-01

    We present results of an unbiased structure search for stable ruthenium silicide compounds with various stoichiometries, using a recently developed technique that combines particle swarm optimization algorithms with first-principles calculations. Two experimentally observed structures of ruthenium silicides, RuSi (space group P2(1)3) and Ru2Si3 (space group Pbcn), are successfully reproduced under ambient pressure conditions. In addition, a stable RuSi2 compound with β-FeSi2 structure type (space group Cmca) was found. The calculations of the formation enthalpy, elastic constants, and phonon dispersions demonstrate the Cmca-RuSi2 compound is energetically, mechanically, and dynamically stable. The analysis of electronic band structures and densities of state reveals that the Cmca-RuSi2 phase is a semiconductor with a direct band gap of 0.480 eV and is stabilized by strong covalent bonding between Ru and neighboring Si atoms. On the basis of the Mulliken overlap population analysis, the Vickers hardness of the Cmca structure RuSi2 is estimated to be 28.0 GPa, indicating its ultra-incompressible nature. PMID:26576622

  6. Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy.

    PubMed

    Lin, Chun-Ting; Chen, Yu-Wei; Su, James; Wu, Chien-Ting; Hsiao, Chien-Nan; Shiao, Ming-Hua; Chang, Mao-Nan

    2015-12-01

    In this study, we propose an ultra-facile approach to prepare a platinum silicide nanoparticle-modified tip apex (PSM tip) used for scanning Kelvin probe microscopy (SKPM). We combined a localized fluoride-assisted galvanic replacement reaction (LFAGRR) and atmospheric microwave annealing (AMA) to deposit a single platinum silicide nanoparticle with a diameter of 32 nm on the apex of a bare silicon tip of atomic force microscopy (AFM). The total process was completed in an ambient environment in less than 3 min. The improved potential resolution in the SKPM measurement was verified. Moreover, the resolution of the topography is comparable to that of a bare silicon tip. In addition, the negative charges found on the PSM tips suggest the possibility of exploring the use of current PSM tips to sense electric fields more precisely. The ultra-fast and cost-effective preparation of the PSM tips provides a new direction for the preparation of functional tips for scanning probe microscopy. PMID:26471480

  7. Study of temperature dependent zirconium silicide phases in Zr/Si structure by differential scanning calorimetry

    NASA Astrophysics Data System (ADS)

    Faruque, Sk Abdul Kader Md; Ranjan Bhattachryya, Satya; Sinha, Anil Kumar; Chakraborty, Supratic

    2016-02-01

    The differential scanning calorimetry (DSC) technique is employed to study the formation of different silicide compounds of Zr thin-film deposited on a 100 μm-thick Si (1 0 0) substrate by dc sputtering. A detailed analysis shows that silicide layers start growing at  ∼246 °C that changes to stable ZrSi2 at 627 °C via some compounds with different stoichiometric ratios of Zr and Si. It is further observed that oxygen starts reacting with Zr at  ∼540 °C but a stoichiometric ZrO2 film is formed after complete consumption of Zr metal at 857 °C. A further rise in temperature changes a part of ZrSi2 to Zr-Silicate. The synchrotron radiation-based grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies also corroborate the above findings. Atomic force microscopy is also carried out on the samples. It is evident from the observations that an intermixing and nucleation of Zr and Si occur at lower temperature prior to the formation of the interfacial silicate layer. Zr-Silicate formation takes place only at a higher temperature.

  8. ZPR-3 Assembly 12 : A cylindrical assembly of highly enriched uranium, depleted uranium and graphite with an average {sup 235}U enrichment of 21 atom %.

    SciTech Connect

    Lell, R. M.; McKnight, R. D.; Perel, R. L.; Wagschal, J. J.; Nuclear Engineering Division; Racah Inst. of Physics

    2010-09-30

    Over a period of 30 years, more than a hundred Zero Power Reactor (ZPR) critical assemblies were constructed at Argonne National Laboratory. The ZPR facilities, ZPR-3, ZPR-6, ZPR-9 and ZPPR, were all fast critical assembly facilities. The ZPR critical assemblies were constructed to support fast reactor development, but data from some of these assemblies are also well suited for nuclear data validation and to form the basis for criticality safety benchmarks. A number of the Argonne ZPR/ZPPR critical assemblies have been evaluated as ICSBEP and IRPhEP benchmarks. Of the three classes of ZPR assemblies, engineering mockups, engineering benchmarks and physics benchmarks, the last group tends to be most useful for criticality safety. Because physics benchmarks were designed to test fast reactor physics data and methods, they were as simple as possible in geometry and composition. The principal fissile species was {sup 235}U or {sup 239}Pu. Fuel enrichments ranged from 9% to 95%. Often there were only one or two main core diluent materials, such as aluminum, graphite, iron, sodium or stainless steel. The cores were reflected (and insulated from room return effects) by one or two layers of materials such as depleted uranium, lead or stainless steel. Despite their more complex nature, a small number of assemblies from the other two classes would make useful criticality safety benchmarks because they have features related to criticality safety issues, such as reflection by soil-like material. ZPR-3 Assembly 12 (ZPR-3/12) was designed as a fast reactor physics benchmark experiment with an average core {sup 235}U enrichment of approximately 21 at.%. Approximately 68.9% of the total fissions in this assembly occur above 100 keV, approximately 31.1% occur below 100 keV, and essentially none below 0.625 eV - thus the classification as a 'fast' assembly. This assembly is Fast Reactor Benchmark No. 9 in the Cross Section Evaluation Working Group (CSEWG) Benchmark Specifications

  9. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    SciTech Connect

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  10. Deposition of aluminide and silicide based protective coatings on niobium

    NASA Astrophysics Data System (ADS)

    Majumdar, S.; Arya, A.; Sharma, I. G.; Suri, A. K.; Banerjee, S.

    2010-11-01

    We compare aluminide and alumino-silicide composite coatings on niobium using halide activated pack cementation (HAPC) technique for improving its oxidation resistance. The coated samples are characterized by SEM, EDS, EPMA and hardness measurements. We observe formation of NbAl3 in aluminide coating of Nb, though the alumino-silicide coating leads to formation primarily of NbSi2 in the inner layer and a ternary compound of Nb-Si-Al in the outer layer, as reported earlier (Majumdar et al. [11]). Formation of niobium silicide is preferred over niobium aluminide during alumino-silicide coating experiments, indicating Si is more strongly bonded to Nb than Al, although equivalent quantities of aluminium and silicon powders were used in the pack chemistry. We also employ first-principles density functional pseudopotential-based calculations to calculate the relative stability of these intermediate phases and the adhesion strength of the Al/Nb and Si/Nb interfaces. NbSi2 exhibits much stronger covalent character as compared to NbAl3. The ideal work of adhesion for the relaxed Al/Nb and Si/Nb interfaces are calculated to be 3226 mJ/m2 and 3545 mJ/m2, respectively, indicating stronger Nb-Si bonding across the interface.

  11. Environmental site description for a Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) production plant at the Oak Ridge Gaseous Diffusion Plant Site

    SciTech Connect

    Not Available

    1991-09-01

    In January 1990, the Secretary of Energy approved a plan for the demonstration and deployment of the Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) technology, with the near-term goal to provide the necessary information to make a deployment decision by November 1992. The U-AVLIS process is based on electrostatic extraction of photoionized U-235 atoms from an atomic vapor stream created by electron-beam vaporization of uranium metal alloy. A programmatic document for use in screening DOE sites to locate the U-AVLIS production plant was developed and implemented in two parts (Wolsko et al. 1991). The first part consisted of a series of screening analyses, based on exclusionary and other criteria, that identified a reasonable number of candidate sites. These sites were then subjected to a more rigorous and detailed comparative analysis for the purpose of developing a short list of reasonable alternative sites for later environmental examination. This environmental site description (ESD) provides a detailed description of the ORGDP site and vicinity suitable for use in an environmental impact statement (EIS). The report is based on existing literature, data collected at the site, and information collected by Argonne National Laboratory (ANL) staff during a site visit. The organization of the ESD is as follows. Topics addressed in Sec. 2 include a general site description and the disciplines of geology, water resources, biotic resources, air resources, noise, cultural resources, land use, socioeconomics, and waste management. Identification of any additional data that would be required for an EIS is presented in Sec. 3. Following the site description and additional data requirements, Sec. 4 provides a short, qualitative assessment of potential environmental issues. 37 refs., 20 figs., 18 tabs.

  12. Americium, plutonium and uranium contamination and speciation in well waters, streams and atomic lakes in the Sarzhal region of the Semipalatinsk Nuclear Test Site, Kazakhstan.

    PubMed

    León Vintró, L; Mitchell, P I; Omarova, A; Burkitbayev, M; Jiménez Nápoles, H; Priest, N D

    2009-04-01

    New data are reported on the concentrations, isotopic composition and speciation of americium, plutonium and uranium in surface and ground waters in the Sarzhal region of the Semipalatinsk Test Site, and an adjacent area including the settlement of Sarzhal. The data relate to filtered water and suspended particulate from (a) streams originating in the Degelen Mountains, (b) the Tel'kem 1 and Tel'kem 2 atomic craters, and (c) wells on farms located within the study area and at Sarzhal. The measurements show that (241)Am, (239,240)Pu and (238)U concentrations in well waters within the study area are in the range 0.04-87mBq dm(-3), 0.7-99mBq dm(-3), and 74-213mBq dm(-3), respectively, and for (241)Am and (239,240)Pu are elevated above the levels expected solely on the basis of global fallout. Concentrations in streams sourced in the Degelen Mountains are similar, while concentrations in the two water-filled atomic craters are somewhat higher. Suspended particulate concentrations in well waters vary considerably, though median values are very low, at 0.01mBq dm(-3), 0.08mBq dm(-3) and 0.32mBq dm(-3) for (241)Am, (239,240)Pu and (238)U, respectively. The (235)U/(238)U isotopic ratio in almost all well and stream waters is slightly elevated above the 'best estimate' value for natural uranium worldwide, suggesting that some of the uranium in these waters is of test-site provenance. Redox analysis shows that on average most of the plutonium present in the microfiltered fraction of these waters is in a chemically reduced form (mean 69%; 95% confidence interval 53-85%). In the case of the atomic craters, the proportion is even higher. As expected, all of the americium present appears to be in a reduced form. Calculations suggest that annual committed effective doses to individual adults arising from the daily ingestion of these well waters are in the range 11-42microSv (mean 21microSv). Presently, the ground water feeding these wells would not appear to be contaminated with

  13. Effects of substrate crystallinity and dopant on the growth kinetics of platinum silicides

    NASA Astrophysics Data System (ADS)

    Takai, H.; Psaras, P. A.; Tu, K. N.

    1985-12-01

    The growth kinetics of platinum silicides have been studied on four substrate categories: single-crystal, amorphous, undoped polycrystalline, and phosphorus-doped (8×1020 at./cm3) polycrystalline silicon. The sequential growth of Pt2Si and PtSi were analyzed by Rutherford backscattering spectroscopy (RBS), Seeman-Bohlin x-ray diffraction, and cross-section transmission electron microscopy. Phosphorus depth profiles were measured by secondary ion mass spectroscopy (SIMS). Our results conclude that the activation energies for the growth of Pt2Si and PtSi are not affected by substrate crystallinity and doping of phosphorus. Analysis of the phosphorus profile by SIMS clearly showed that phosphorus atoms are segregated near the interface between PtSi and polycrystalline silicon, but not at the Pt2Si/polycrystalline silicon interface.

  14. Environmental site description for a Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) production plant at the Portsmouth Gaseous Diffusion Plant site

    SciTech Connect

    Marmer, G.J.; Dunn, C.P.; Filley, T.H.; Moeller, K.L.; Pfingston, J.M.; Policastro, A.J.; Cleland, J.H.

    1991-09-01

    Uranium enrichment in the United States has utilized a diffusion process to preferentially enrich the U-235 isotope in the uranium product. In the 1970s, the US Department of Energy (DOE) began investigating more efficient and cost-effective enrichment technologies. In January 1990, the Secretary of Energy approved a plan for the demonstration and deployment of the Uranium Atomic Vapor Laser isotope Separation (U-AVLIS) technology with the near-term goal to provide the necessary information to make a deployment decision by November 1992. Initial facility operation is anticipated for 1999. A programmatic document for use in screening DOE sites to locate a U-AVLIS production plant was developed and implemented in two parts. The first part consisted of a series of screening analyses, based on exclusionary and other criteria, that identified a reasonable number of candidate sites. The final evaluation, which included sensitivity studies, identified the Oak Ridge Gaseous Diffusion Plant (ORGDP) site, the Paducah Gaseous Diffusion Plant (PGDP) site, and the Portsmouth Gaseous Diffusion Plant (PORTS) site as having significant advantages over the other sites considered. This environmental site description (ESD) provides a detailed description of the PORTS site and vicinity suitable for use in an environmental impact statement (EIS). This report is based on existing literature, data collected at the site, and information collected by Argonne National Laboratory (ANL) staff during site visits. The organization of the ESD is as follows. Topics addressed in Sec. 2 include a general site description and the disciplines of geology, water resources, biotic resources, air resources, noise, cultural resources, land use. Socioeconomics, and waste management. Identification of any additional data that would be required for an EIS is presented in Sec. 3.

  15. ZPR-3 Assembly 11 : A cylindrical sssembly of highly enriched uranium and depleted uranium with an average {sup 235}U enrichment of 12 atom % and a depleted uranium reflector.

    SciTech Connect

    Lell, R. M.; McKnight, R. D.; Tsiboulia, A.; Rozhikhin, Y.; National Security; Inst. of Physics and Power Engineering

    2010-09-30

    Over a period of 30 years, more than a hundred Zero Power Reactor (ZPR) critical assemblies were constructed at Argonne National Laboratory. The ZPR facilities, ZPR-3, ZPR-6, ZPR-9 and ZPPR, were all fast critical assembly facilities. The ZPR critical assemblies were constructed to support fast reactor development, but data from some of these assemblies are also well suited for nuclear data validation and to form the basis for criticality safety benchmarks. A number of the Argonne ZPR/ZPPR critical assemblies have been evaluated as ICSBEP and IRPhEP benchmarks. Of the three classes of ZPR assemblies, engineering mockups, engineering benchmarks and physics benchmarks, the last group tends to be most useful for criticality safety. Because physics benchmarks were designed to test fast reactor physics data and methods, they were as simple as possible in geometry and composition. The principal fissile species was {sup 235}U or {sup 239}Pu. Fuel enrichments ranged from 9% to 95%. Often there were only one or two main core diluent materials, such as aluminum, graphite, iron, sodium or stainless steel. The cores were reflected (and insulated from room return effects) by one or two layers of materials such as depleted uranium, lead or stainless steel. Despite their more complex nature, a small number of assemblies from the other two classes would make useful criticality safety benchmarks because they have features related to criticality safety issues, such as reflection by soil-like material. ZPR-3 Assembly 11 (ZPR-3/11) was designed as a fast reactor physics benchmark experiment with an average core {sup 235}U enrichment of approximately 12 at.% and a depleted uranium reflector. Approximately 79.7% of the total fissions in this assembly occur above 100 keV, approximately 20.3% occur below 100 keV, and essentially none below 0.625 eV - thus the classification as a 'fast' assembly. This assembly is Fast Reactor Benchmark No. 8 in the Cross Section Evaluation Working Group

  16. Atomic Fuel, Understanding the Atom Series. Revised.

    ERIC Educational Resources Information Center

    Hogerton, John F.

    This publication is part of the "Understanding the Atom" series. Complete sets of the series are available free to teachers, schools, and public librarians who can make them available for reference or use by groups. Among the topics discussed are: What Atomic Fuel Is; The Odyssey of Uranium; Production of Uranium; Fabrication of Reactor Fuel…

  17. Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

    PubMed

    Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

    2015-07-10

    Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields. PMID:26086207

  18. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    NASA Astrophysics Data System (ADS)

    Ozcan, Ahmet S.; Lavoie, Christian; Alptekin, Emre; Jordan-Sweet, Jean; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-04-01

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  19. Stacked Metal Silicide/Silicon Far-Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph

    1988-01-01

    Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

  20. Characteristics of a promising new thermoelectric material - Ruthenium silicide

    NASA Technical Reports Server (NTRS)

    Ohta, Toshitaka; Vining, Cronin B.; Allevato, Camillo E.

    1991-01-01

    A preliminary study on arc-melted samples has indicated that ruthenium silicide has the potential to obtain figure-of-merit values four times higher than that of conventional silicon-germanium material. In order to realize the high figure-of-merit values, high-quality crystal from the melt is needed. A Bridgman-like method has been employed and has realized much better crystals than arc-melted ones.

  1. An Investigation of Electrical Contacts for Higher Manganese Silicide

    NASA Astrophysics Data System (ADS)

    Shi, Xinghua; Zamanipour, Zahra; Krasinski, Jerzy S.; Tree, Alan; Vashaee, Daryoosh

    2012-09-01

    Five metals with large work functions including Co, Ni, Cr, Ti, and Mo and two silicides including MnSi and TiSi2 were examined to determine the best contact material for the thermoelectric material higher manganese silicide (HMS). Three-layer structures of HMS/contact/HMS were prepared in a sintering process. The contact resistance was measured versus temperature. The structures were subjected to x-ray diffraction and energy-dispersive x-ray spectroscopy examination. Thermal stability of the structures was determined by heating the samples to 700°C for different time intervals. The pure metals failed to make reliable contacts due to poor mechanical and chemical stability at high temperatures. In contrast, the metal silicides (MnSi and TiSi2) showed superior chemical and mechanical stability after the thermal stability test. The observed contact resistance of MnSi and TiSi2 was within the range of practical interest (10-5 Ω cm2 to 10-4 Ω cm2) over the entire range of investigated temperatures (20°C to 700°C). The best properties were found for the nanograined MnSi, for which the resistance of the contact was as low as 10-6 Ω cm2.

  2. Processing, Microstructure, and Properties of Multiphase Mo Silicide Alloys

    SciTech Connect

    Heatherly, L.; Liu, C.T.; Schneibel, J.H.

    1998-11-30

    Multiphase Mo silicide alloys containing T2 (Mo{sub 5}SiB{sub 2}), Mo{sub 3}Si and Mo phases where prepared by both melting and casting (M and C) and powder metallurgical (PM) processes. Glassy phases are observed in PM materials but not in M and C materials. Microstructural studies indicate that the primary phase is Mo-rich solid solution in alloys containing {le}(9.4Si+13.8B, at. %) and T2 in alloys with {ge}(9.8Si+14.6B). An eutectic composition is estimated to be close to Mo-9.6Si-14.2B. The mechanical properties of multiphase silicide alloys were determined by hardness, tensile and bending tests at room temperature. The multiphase alloy MSB-18 (Mo-9.4Si-13.8B) possesses a flexure strength distinctly higher than that of MoSi{sub 2} and other Mo{sub 5}Si{sub 3} silicide alloys containing no Mo particles. Also, MSB-18 is tougher than MoSi{sub 2} by a factor of 4.

  3. Processing, microstructure, and properties of multiphase Mo silicide alloys

    SciTech Connect

    Liu, C.T.; Schneibel, J.H.; Heatherly, L.

    1999-07-01

    Multiphase Mo silicide alloys containing T2 (Mo{sub 5}SiB{sub 2}), Mo{sub 3}Si and Mo phases were prepared by both melting and casting (M and C) and powder metallurgical (PM) processes. Glassy phases are observed in PM materials but not in M and C materials. Microstructural studies indicate that the primary phase is Mo-rich solid solution in alloys containing {le}(9.4Si+13.8B, at.%) and T2 in alloys with {ge}(9.8Si+14.6B). An eutectic composition is estimated to be close to Mo-9.6Si-14.2B. The mechanical properties of multiphase silicide alloys were determined by hardness, tensile and bending tests at room temperature. The multiphase alloy MSB-18 (Mo-9.4Si-13.8B) possesses a flexure strength distinctly higher than that of MoSi{sub 2} and other Mo{sub 5}Si{sub 3} silicide alloys containing no Mo particles. Also, MSB-18 is tougher than MoSi{sub 2} by a factor of 4.

  4. The Electrical Contact for Higher Manganese Silicide Thermoelectric Material

    NASA Astrophysics Data System (ADS)

    Shi, Xinghua; Zamanipour, Zahra; Vashaee, Daryoosh

    2011-03-01

    The Electrical Contact for Higher Manganese Silicide Thermoelectric Material Xinghua Shi, Zahra Zamanipour, Daryoosh Vashaee Several electrical contact materials for Higher Manganese Silicide (HMS) are introduced. HMS is useful thermoelectric material for medium to high temperature applications. We have investigated several materials including Co, Ni, Cr, Ti, Mo, MnSi, MoSi2, and TiSi2 in search of the best contact material to HMS. The low electrical resistivity and reliability of the contact are two important elements to make a high efficient TE device. Moreover, the contact must maintain its chemical, mechanical, thermal, and electrical properties over a broad range of temperature (20C-700C). The investigated elemental metals failed to make reliable contact in terms of mechanical and chemical stability at high temperature. In contrast, the investigated metal silicides showed superior stability over extended operation at high temperature. The thermal stability and strong mechanical bonding of TiSi2 C54 phase and MnSi were specially observed. Their ohmic contact resistance was also within the range of interest over the whole range of temperature (10-5 -10-4 Ω cm2) . This work was supported by AFOSR High Temperature Materials and NSF under contract CBET0933763.

  5. Formation of vanadium silicide by high dose ion implantation

    NASA Astrophysics Data System (ADS)

    Salvi, V. P.; Narsale, A. M.; Vidwans, S. V.; Rangwala, A. A.; Guzman, L.; Dapor, M.; Giunta, G.; Calliari, L.; Marchetti, F.

    1987-10-01

    The vanadium silicide system has been found to be of increasing interest because one of the silicide phases viz. V 3Si with the A-15 structure is often accompanied by a high temperature superconductivity. We have studied the formation of vanadium silicide layers by high dose ion implantation. 30 keV 51V + ions were implanted at room temperature onto thermally evaporated a-Si films on thermally grown SiO 2 substrates. The samples were annealed in vacuum to study the possible evolution of V-Si phases. Both Seeman-Bohlin X-ray diffraction and Auger/sputter profiling techniques were used to analyse these samples. The observed Auger depth profile of the annealed samples shows a more uniform vanadium distribution as compared to the vanadium distribution in as-implanted samples, along with the changes in the Si L 2,3VV lineshape. The X-ray diffraction results show the formation of V 3Si, V 5Si 3 and VSi 2 phases. After annealing the sample in vacuum, a more ordered growth of V 3Si phase is found to be accompanied by an increase in VSi 2 phase. This has been related to the possible changes ocurring in the a-Si layers due to annealing of the sample.

  6. Initial CaF2 reactions on Si(1 1 4)-2 × 1: Isolated silicides, faceting and partial CaF adsorption

    NASA Astrophysics Data System (ADS)

    Kim, Hidong; Duvjir, Ganbat; Dugerjav, Otgonbayar; Li, Huiting; Seo, Jae M.

    2015-12-01

    When CaF2 molecules are deposited on Si(1 1 4)-2 × 1 held at 500 °C, two kinds of isolated and symmetric Ca-silicide units are initially formed. With increasing CaF2 deposition to 0.4 ML, instead of the terrace being filled with them, a trench composed of (1 1 3) and (1 1 7) facets appears on the surface as a result of substrate etching induced by dissociated F atoms. Selectively on this (1 1 3) facet, a 2 × 2 CaF overlayer is formed uniformly. In the present studies, using scanning tunneling microscopy and synchrotron photoemission spectroscopy, the origins of such isolation of Ca-silicide units on the (1 1 4) terrace as well as selective adsorption of CaF on the (1 1 3) facet have been disclosed.

  7. Evolution of the atomic order and valence state of rare-earth atoms and uranium in a new carbon-metal composite—diphthalocyanine pyrolysate C64H32N16 Me ( Me = Y, La, Ce, Eu, and U)

    NASA Astrophysics Data System (ADS)

    Sovestnov, A. E.; Kapustin, V. K.; Tikhonov, V. I.; Fomin, E. V.; Chernenkov, Yu. P.

    2014-08-01

    The structure of a metal-carbon composite formed by the pyrolysis of diphthalocyanine of some rare-earth elements (Y, La, Ce, Eu) and uranium in the temperature range T ann = 800-1700°C has been investigated for the first time by the methods of X-ray diffraction analysis and X-ray line shift. It has been shown that, in the general case, the studied pyrolysates consist of three phases. One phase corresponds to the structure of graphite. The second phase corresponds to nitrides, carbides, and oxides of basic metal elements with a crystallite size ranging from 5 to 100 nm. The third phase is amorphous or consisting of crystallites with a size of ˜1 nm. It has been found that all the basic elements (Y, La, Ce, Eu, U) and incorporated iodine atoms in the third phase are in a chemically bound state. The previously unobserved electronic configurations have been revealed for europium. The possibility of including not only atoms of elements forming diphthalocyanine but also other elements (for example, iodine) in the composite structure is of interest, in particular, for the creation of a thermally, chemically, and radiation resistant metal-carbon matrix for the radioactive waste storage.

  8. The whole-core LEU silicide fuel demonstration in the JMTR

    SciTech Connect

    Aso, Tomokazu; Akashi, Kazutomo; Nagao, Yoshiharu

    1997-08-01

    The JMTR was fully converted to LEU silicide (U{sub 3}Si{sub 2}) fuel with cadmium wires as burnable absorber in January, 1994. The reduced enrichment program for the JMTR was initiated in 1979, and the conversion to MEU (enrichment ; 45%) aluminide fuel was carried out in 1986 as the first step of the program. The final goal of the program was terminated by the present LEU conversion. This paper describes the results of core physics measurement through the conversion phase from MEU fuel core to LEU fuel core. Measured excess reactivities of the LEU fuel cores are mostly in good agreement with predicted values. Reactivity effect and burnup of cadmium wires, therefore, were proved to be well predicted. Control rod worth in the LEU fuel core is mostly less than that in the MEU fuel core. Shutdown margin was verified to be within the safety limit. There is no significant difference in temperature coefficient of reactivity between the MEU and LEU fuel cores. These results verified that the JMTR was successfully and safely converted to LEU fuel. Extension of the operating cycle period was achieved and reduction of spend fuel elements is expected by using the fuel with high uranium density.

  9. Status of core conversion with LEU silicide fuel in JRR-4

    SciTech Connect

    Nakajima, Teruo; Ohnishi, Nobuaki; Shirai, Eiji

    1997-08-01

    Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x10{sup 13}(n/cm{sup 2}/s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities.

  10. Experimental studies of thermal and chemical interactions between oxide and silicide nuclear fuels with water

    SciTech Connect

    farahani, A.A.; Corradini, M.L.

    1995-09-01

    Given some transient power/cooling mismatch is a nuclear reactor and its inability to establish the necessary core cooling, energetic fuel-coolant interactions (FCI`s commonly called `vapor explosions`) could occur as a result of the core melting and coolant contact. Although a large number of studies have been done on energetic FCI`s, very few experiments have been performed with the actual fuel materials postulated to be produced in severe accidents. Because of the scarcity of well-characterized FCI data for uranium allows in noncommercial reactors (cermet and silicide fuels), we have conducted a series of experiments to provide a data base for the foregoing materials. An existing 1-D shock-tube facility was modified to handle depleted radioactive materials (U{sub 3}O{sub 8}-Al, and U{sub 3}Si{sub 2}-Al). Our objectives have been to determine the effects of the initial fuel composition and temperature and the driving pressure (triggering) on the explosion work output, dynamic pressures, transient temperatures, and the hydrogen production. Experimental results indicate limited energetics, mainly thermal interactions, for these fuel materials as compared to aluminum where more chemical reactions occur between the molten aluminum and water.

  11. Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

    DOEpatents

    Ishida, Emi

    1999-08-10

    A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

  12. Precipitation of gold into metastable gold silicide in silicon

    SciTech Connect

    Baumann, F.H.; Schroeter, W. )

    1991-03-15

    We report a detailed investigation of the precipitation behavior of gold in float-zone silicon from a highly supersaturated solution. Nucleation, morphology, and crystallography as well as the decomposition of the solution were examined using high-resolution electron microscopy, selected area diffraction combined with tilting experiments, Hall-effect measurements, and energy dispersive x-ray spectroscopy. After in-diffusion of gold at 1275 {degree}C annealing experiments were performed at 850 {degree}C for durations ranging from 5 min up to 35 d. It is shown that gold precipitates in small spherical particles (diameter: 10--20 nm) consisting of a metastable gold silicide. By means of selected area diffraction combined with a special tilting procedure, the unit cell is proved to be orthorhombic with lattice parameters {ital a}=0.971 nm, {ital b}=0.768 nm, and {ital c}=0.703 nm. Systematic absence of reflections in several precipitate zone-axis patterns reveals the space group of the silicide to be {ital Pnma} or {ital Pn}2{sub 1}{ital a}. According to Hall-effect measurements the concentration of substitutional gold decreases to a few percent within 5 min annealing at 850 {degree}C. Only a part of it has precipitated in gold silicide particles, which are found at small extrinsic stacking faults. The stacking faults represent a density of self-interstitials Si{sub {ital i}} of about 10{sup 18} cm{sup {minus}3}, which according to control experiments is about a factor of 50 above the equilibrium concentration of Si{sub {ital i}} at 1274 {degree}C. As annealing proceeds the stacking faults disappear, and gold is finally found in spherical particles embedded stress-free into the silicon matrix.

  13. Uranium triamidoamine chemistry.

    PubMed

    Gardner, Benedict M; Liddle, Stephen T

    2015-07-01

    Triamidoamine (Tren) complexes of the p- and d-block elements have been well-studied, and they display a diverse array of chemistry of academic, industrial and biological significance. Such in-depth investigations are not as widespread for Tren complexes of uranium, despite the general drive to better understand the chemical behaviour of uranium by virtue of its fundamental position within the nuclear sector. However, the chemistry of Tren-uranium complexes is characterised by the ability to stabilise otherwise reactive, multiply bonded main group donor atom ligands, construct uranium-metal bonds, promote small molecule activation, and support single molecule magnetism, all of which exploit the steric, electronic, thermodynamic and kinetic features of the Tren ligand system. This Feature Article presents a current account of the chemistry of Tren-uranium complexes. PMID:26035690

  14. Progress in doping of ruthenium silicide (Ru2Si3)

    NASA Technical Reports Server (NTRS)

    Vining, C. B.; Allevato, C. E.

    1992-01-01

    Ruthenium silicide is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels.

  15. Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

    PubMed Central

    2014-01-01

    Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

  16. Ion-beam nanopatterning of silicon surfaces under codeposition of non-silicide-forming impurities

    NASA Astrophysics Data System (ADS)

    Moon, B.; Yoo, S.; Kim, J.-S.; Kang, S. J.; Muñoz-García, J.; Cuerno, R.

    2016-03-01

    We report experiments on surface nanopatterning of Si targets which are irradiated with 2-keV Ar+ ions impinging at near-glancing incidence, under concurrent codeposition of Au impurities simultaneously extracted from a gold target by the same ion beam. Previous recent experiments by a number of groups suggest that silicide formation is a prerequisite for pattern formation in the presence of metallic impurities. In spite of the fact that Au is known not to form stable compounds with the Si atoms, ripples nonetheless emerge in our experiments with nanometric wavelengths and small amplitudes, and with an orientation that changes with distance to the Au source. We provide results of sample analysis through Auger electron and energy-dispersive x-ray spectroscopies for their space-resolved chemical composition, and through atomic force, scanning transmission electron, and high-resolution transmission microscopies for their morphological properties. We discuss these findings in the light of current continuum models for this class of systems. The composition of and the dynamics within the near-surface amorphized layer that ensues is expected to play a relevant role to account for the unexpected formation of these surface structures.

  17. Reaction of Laser-Ablated Uranium and Thorium Atoms with H2Se: A Rare Example of Selenium Multiple Bonding.

    PubMed

    Vent-Schmidt, Thomas; Andrews, Lester; Thanthiriwatte, K Sahan; Dixon, David A; Riedel, Sebastian

    2015-10-19

    The compounds H2ThSe and H2USe were synthesized by the reaction of laser-ablated actinide metal atoms with H2Se under cryogenic conditions following the procedures used to synthesize H2AnX (An = Th, U; X = O, S). The molecules were characterized by infrared spectra in an argon matrix with the aid of deuterium substitution and electronic structure calculations at the density functional theory level. The main products, H2ThSe and H2USe, are shown to have a highly polarized actinide-selenium triple bond, as found for H2AnS on the basis of electronic structure calculations. There is an even larger back-bonding of the Se with the An than found for the corresponding sulfur compounds. These molecules are of special interest as rare examples of multiple bonding of selenium to a metal, particularly an actinide metal. PMID:26418218

  18. Nonuniformity effects in a hybrid platinum silicide imaging device

    NASA Astrophysics Data System (ADS)

    Dereniak, Eustace L.; Perry, David L.

    1992-05-01

    The objective of this project was twofold. The first objective was to characterize the Hughes Aircraft Company CRC-365 platinum silicide imaging device in a starting infrared sensor system. The CRC-365 is a hybrid 256 x 256 IR focal plane array that operates in the 3-5 micrometer thermal infrared band. A complete sensor and computer interface were built for these tests, using, plans provided by the Rome Laboratory at Hanscom AFB. Testing of the device revealed largely satisfactory performance, with notable exception in the areas of temporal response, temporal noise, and electrical crosstalk. The second objective of this research was to advance the understanding of how detector nonuniformity effects reduce the performance of sensors of this type. Notable accomplishments in this area included a complete linear analysis of corrected thermal imaging in platinum silicide sensors, a nonlinear analysis of the CRC-365's expected performance, analysis of its actual performance when operated with nonuniformity correction, and the development of a new figure of merit. It was demonstrated that the CRC-365 is capable of maintaining background-noise-limited performance over at least a 40 K target temperature range, when operated with two-point nonuniformity correction.

  19. SOLVENT EXTRACTION OF URANIUM VALUES

    DOEpatents

    Feder, H.M.; Ader, M.; Ross, L.E.

    1959-02-01

    A process is presented for extracting uranium salt from aqueous acidic solutions by organic solvent extraction. It consists in contacting the uranium bearing solution with a water immiscible dialkylacetamide having at least 8 carbon atoms in the molecule. Mentioned as a preferred extractant is dibutylacetamide. The organic solvent is usually used with a diluent such as kerosene or CCl/sub 4/.

  20. Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

    NASA Technical Reports Server (NTRS)

    Allevato, C. E.; Vining, Cronin B.

    1992-01-01

    The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

  1. Magnetic structure of the ferromagnetic new ternary silicide Nd5CoSi2.

    PubMed

    Mayer, C; Gaudin, E; Gorsse, S; Porcher, F; André, G; Chevalier, B

    2012-04-01

    Nd(5)CoSi(2) was obtained from the elements by arc-melting followed by annealing at 883 K. Its investigation by single-crystal x-ray and neutron powder diffraction shows that this ternary silicide crystallizes as Nd(5)Si(3) in a tetragonal structure deriving from the Cr(5)B(3)-type (I4/mcm space group; a = 7.7472(2) and c = 13.5981(5) Å as unit cell parameters). The structural refinements confirm the mixed occupancy on the 8h site between Si and Co atoms, as already observed for Gd(5)CoSi(2). Magnetization and specific heat measurements reveal a ferromagnetic behavior below T(C) = 55 K for Nd(5)CoSi(2). This magnetic ordering is further evidenced by neutron powder diffraction investigation revealing between 1.8 K and T(C) a canted ferromagnetic structure in the direction of the c-axis described by a propagation vector k = (0 0 0). At 1.8 K, the two Nd(3+) ions carry ordered magnetic moments equal respectively to 1.67(7) and 2.37(7) μ(B) for Nd1 and Nd2; these two moments exhibit a canting angle of θ = 4.3(6)°. This magnetic structure presents some similarities with that reported for Nd(5)Si(3). PMID:22392874

  2. NMOS contact resistance reduction with selenium implant into NiPt silicide

    NASA Astrophysics Data System (ADS)

    Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

    2012-11-01

    A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

  3. Controlled assembly of graphene-capped nickel, cobalt and iron silicides

    PubMed Central

    Vilkov, O.; Fedorov, A.; Usachov, D.; Yashina, L. V.; Generalov, A. V.; Borygina, K.; Verbitskiy, N. I.; Grüneis, A.; Vyalikh, D. V.

    2013-01-01

    The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved. PMID:23835625

  4. Stacked silicide/silicon mid- to long-wavelength infrared detector

    DOEpatents

    Maserjian, Joseph

    1990-03-13

    The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

  5. Synthetic Development of Metal Silicide Nanowires for Thermoelectric and Spintronic Applications

    NASA Astrophysics Data System (ADS)

    Higgins, Jeremy Michael

    2011-12-01

    Nanomaterials, including nanowires (NWs), are a new class of materials with the potential to lead to major changes in many aspects of human society. Innumerable applications for nanomaterials are envisioned or are being realized now. However, such new functionalities are and will continue to be predicated on our ability to precisely synthesize nanomaterials, a skill yet undeveloped in a majority of chemical systems. Metal silicides are a class of refractory intermetallic compounds composed of abundant elements with widely varying properties that are currently employed in a large range of technological applications. In this thesis, I describe my exploration of metal silicide NWs, particularly those in the Mn-Si binary system, in order to develop rational synthetic strategies for accessing binary and ternary silicide NWs and characterize their potential for thermoelectric and spintronic applications. Chapter 1 develops a common set of ideas and a common language before reviewing the current "state of the art" in silicide NW synthesis, exploring a number of the mysteries still surrounding silicide NW synthesis, and presenting silicide NW applications. Chapter 2 depicts the use of Mn(CO) 5SiCl3 as the vapor phase precursor to synthesize higher manganese silicide NWs (also known as HMS, MnSi˜1.7 MnSi2--x) for the first time, the identification of the NW subphase as Mn19Si33, and conductivity measurement on HMS NWs revealing bulk-like behavior. Chapter 3 describes employing MnCl 2 as the precursor for the first successful synthesis of MnSi NWs and transverse magnetoresistance measurements on these MnSi NWs to observe the signatures of helimagnetism in NWs for the first time. Chapter 4 is a systematic examination of silicide NW synthesis by single source precursor chemical vapor deposition, highlighting the complex interplay of substrate diffusion and vapor phase reactivity giving rise to material incorporation in silicide NWs. Chapter 5 details the direct reaction of Mn

  6. Europium Silicide – a Prospective Material for Contacts with Silicon

    PubMed Central

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-01-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

  7. Europium Silicide – a Prospective Material for Contacts with Silicon

    NASA Astrophysics Data System (ADS)

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-05-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

  8. Controlled formation and resistivity scaling of nickel silicide nanolines.

    PubMed

    Li, Bin; Luo, Zhiquan; Shi, Li; Zhou, JiPing; Rabenberg, Lew; Ho, Paul S; Allen, Richard A; Cresswell, Michael W

    2009-02-25

    We demonstrate a top-down method for fabricating nickel mono-silicide (NiSi) nanolines (also referred to as nanowires) with smooth sidewalls and line widths down to 15 nm. Four-probe electrical measurements reveal that the room temperature electrical resistivity of the NiSi nanolines remains constant as the line widths are reduced to 23 nm. The resistivity at cryogenic temperatures is found to increase with decreasing line width. This finding can be attributed to electron scattering at the sidewalls and is used to deduce an electron mean free path of 6.3 nm for NiSi at room temperature. The results suggest that NiSi nanolines with smooth sidewalls are able to meet the requirements for implementation at the 22 nm technology node without degradation of device performance. PMID:19417448

  9. Capping of rare earth silicide nanowires on Si(001)

    NASA Astrophysics Data System (ADS)

    Appelfeller, Stephan; Franz, Martin; Kubicki, Milan; Reiß, Paul; Niermann, Tore; Schubert, Markus Andreas; Lehmann, Michael; Dähne, Mario

    2016-01-01

    The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along {111} lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires.

  10. Europium Silicide - a Prospective Material for Contacts with Silicon.

    PubMed

    Averyanov, Dmitry V; Tokmachev, Andrey M; Karateeva, Christina G; Karateev, Igor A; Lobanovich, Eduard F; Prutskov, Grigory V; Parfenov, Oleg E; Taldenkov, Alexander N; Vasiliev, Alexander L; Storchak, Vyacheslav G

    2016-01-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

  11. Formation, oxidation, electronic, and electrical properties of copper silicides

    NASA Astrophysics Data System (ADS)

    Cros, A.; Aboelfotoh, M. O.; Tu, K. N.

    1990-04-01

    The solid state reaction between copper and silicon has been studied using Rutherford backscattering, glancing-angle x-ray diffraction, scanning electron microscopy, and x-ray photoemission spectroscopy. Schottky-barrier-height measurements on n-type Si (100) have also been performed in the temperature range of 95-295 K with the use of a current-voltage technique. The results show that a metal-rich compound with a composition in the Cu3Si range forms at low temperatures (473 K). The electronic properties of the compound are dominated by the hybridization between the Cu(d) and Si(p) valence states. A direct consequence of this hybridization is the peculiar oxidation behavior of the compound surface; both Cu and Si have been found to oxidize at room temperature. The oxidation of Si in the silicide is enhanced as compared with the oxidation of the elemental single-crystalline Si surface. Upon annealing the oxidized surface, a solid state reaction takes place: Cu2O disappears and a thicker SiO2 layer grows, owing to the large difference in free energies of formation between SiO2 and Cu2O. The n-type barrier height of 0.79 eV for both the as-deposited metal and the metal-rich silicide phase decreases with increasing temperature with a coefficient close to the temperature coefficient of the indirect energy gap in Si. These results suggest that the Fermi level at the interface is pinned relative to the valence-band edge, independent of temperature.

  12. Synthesis and design of silicide intermetallic materials. 1998 annual progress report

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.; Park, Y.; Vaidya, R.U.; Hollis, K.J.; Kung, H.H.

    1999-03-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the US processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive US processing industries. The program presently has a number of developing industrial connections, including a CRADA with Johns Manville Corporation targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. With Combustion Technology Inc., they are developing silicide-based periscope sight tubes for the direct observation of glass melts. With Accutru International Corporation, they are developing silicide-based protective sheaths for self-verifying temperature sensors which may be used in glass furnaces and other industrial applications. The progress made on the program in this period is summarized.

  13. Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

    NASA Astrophysics Data System (ADS)

    Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean; Lavoie, Christian

    2013-04-01

    Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

  14. Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

    SciTech Connect

    Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean; Lavoie, Christian

    2013-04-29

    Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

  15. On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

    SciTech Connect

    Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.; Bityutskaya, L. A.

    2015-12-15

    Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

  16. India's Worsening Uranium Shortage

    SciTech Connect

    Curtis, Michael M.

    2007-01-15

    As a result of NSG restrictions, India cannot import the natural uranium required to fuel its Pressurized Heavy Water Reactors (PHWRs); consequently, it is forced to rely on the expediency of domestic uranium production. However, domestic production from mines and byproduct sources has not kept pace with demand from commercial reactors. This shortage has been officially confirmed by the Indian Planning Commission’s Mid-Term Appraisal of the country’s current Five Year Plan. The report stresses that as a result of the uranium shortage, Indian PHWR load factors have been continually decreasing. The Uranium Corporation of India Ltd (UCIL) operates a number of underground mines in the Singhbhum Shear Zone of Jharkhand, and it is all processed at a single mill in Jaduguda. UCIL is attempting to aggrandize operations by establishing new mines and mills in other states, but the requisite permit-gathering and development time will defer production until at least 2009. A significant portion of India’s uranium comes from byproduct sources, but a number of these are derived from accumulated stores that are nearing exhaustion. A current maximum estimate of indigenous uranium production is 430t/yr (230t from mines and 200t from byproduct sources); whereas, the current uranium requirement for Indian PHWRs is 455t/yr (depending on plant capacity factor). This deficit is exacerbated by the additional requirements of the Indian weapons program. Present power generation capacity of Indian nuclear plants is 4350 MWe. The power generation target set by the Indian Department of Atomic Energy (DAE) is 20,000 MWe by the year 2020. It is expected that around half of this total will be provided by PHWRs using indigenously supplied uranium with the bulk of the remainder provided by breeder reactors or pressurized water reactors using imported low-enriched uranium.

  17. URANIUM RECOVERY

    DOEpatents

    Fitch, F.T.; Cruikshank, A.J.

    1958-10-28

    A process for recovering uranium from a solution of a diethyl dithiocarbaruate of uranium in an orgakic solvent substantially immiscible with water is presented. The process comprises brlnging the organic solutlon into intimate contact wlth an aqueous solution of ammonium carbonate, whereby the uranium passes to the aqueous carbonate solution as a soluble uranyl carbonate.

  18. Theory of Interface States at Silicon / Transition - - Silicide Interfaces.

    NASA Astrophysics Data System (ADS)

    Lim, Hunhwa

    The Si/NiSi(,2)(111) interface is of both fundamental and techno- logical interest: From the fundamental point of view, it is the best characterized of all semiconductor/metal interfaces, with two well-determined geometries (A and B) involving nearly perfect bonding. (This is because Si and NiSi(,2) have nearly the same lattice spacing.) Consequently, a theoretical treatment of this system makes sense--as it would not for messier systems--and one can have some confidence that the theoretical predictions are relevant to experimental observa- tions. From the technological point of view, Si/NiSi(,2) is representative of the class of semiconductor/metal interfaces that are currently of greatest interest in regard to electronic devices--Si/transition -metal-silicide interfaces. The calculations of this dissertation are for the intrinsic interface states of Si/NiSi(,2)-A geometry. These calculations also provide a foundation for later studies of defects at this interface, and for studies of other related systems, such as CoSi(,2). The calculations employ empirical tight-binding Hamiltonians for both Si and NiSi(,2) (with the parameters fitted to prior calculations of the bulk band structures, which appear to be in agreement with the available experimental data on bulk Si and NiSi(,2)). They also employ Green's function techniques--in particular, the subspace Hamiltonian technique. Our principal results are the following: (1) Interface state disper- sion curves are predicted along the symmetry lines (')(GAMMA)(')M, (')M(')K and (')K(')(GAMMA) of the surface Brillouin zone. (2) A prominent band of interface states is found which disperses downward from an energy within the Si band gap to an energy below the Si valence band edge E(,(upsilon)) as the planar wavevector (')k increases from (')(GAMMA) ((')k = 0) to (')M or (')K (symmetry points at boundary of the surface Brillouin zone). This band of inter- face states should be observable. It produces a peak in the surface

  19. A new swelling model and its application to uranium silicide research reactor fuel

    SciTech Connect

    Hofman, G.L.; Rest, J.; Snelgrove, J.L.

    1992-01-01

    This document discusses a new version of the dispersion fuel behavior model currently being incorporated in DART, which has been generated. The model's description of fuel swelling - more specifically, the evaluation of fission-gas bubble morphology - is significantly improved. Although some of the assumptions underlying the basic model are derived from systems other than U[sub 3]Si[sub 2], it represents a physically realistic interpretation of the observed irradiation behavior of U[sub 3]Si[sub 2] over a wide range of fission densities and fission rates.

  20. A new swelling model and its application to uranium silicide research reactor fuel

    SciTech Connect

    Hofman, G.L.; Rest, J.; Snelgrove, J.L.

    1992-12-31

    This document discusses a new version of the dispersion fuel behavior model currently being incorporated in DART, which has been generated. The model`s description of fuel swelling - more specifically, the evaluation of fission-gas bubble morphology - is significantly improved. Although some of the assumptions underlying the basic model are derived from systems other than U{sub 3}Si{sub 2}, it represents a physically realistic interpretation of the observed irradiation behavior of U{sub 3}Si{sub 2} over a wide range of fission densities and fission rates.

  1. Some recent observations on the radiation behavior of uranium silicide dispersion fuel

    SciTech Connect

    Hofman, G.L.

    1988-01-01

    Addition of B{sub 4}C burnable poison results in higher plate swelling in both U{sub 3}Si{sub 2} and U{sub 3}Si-Al dispersion fuel plates and also decreases the blister threshold temperature of these plates. Prolonged annealing of U{sub 3}Si{sub 2}-Al fuel plates produced no blister after 696 hours at 400{degrees}C. Blister formation started between 257 hours and 327 hours at 425{degrees}C and between 115 hours and 210 hours at 450{degrees}C. Operation with breached cladding resulted in pillowing of an U{sub 3}Si-Al fuel plate due to reaction of the fuel core with coolant water. 4 refs., 10 figs., 2 tabs.

  2. Irradiation behavior of the CNEA's experimental uranium silicide dispersion fuel plates

    SciTech Connect

    Hofman, G.L.; Marajofsky, A.; Kohut, C.; Comision Nacional de Energia Atomica, Buenos Aires )

    1988-01-01

    Since 1978 the CNEA ECBE project has been involved in the development of dispersion fuel plates with four types of fuel materials -- UAl{sub x}, U{sub 3}O{sub 8}, U{sub 3}Si, and U{sub 3}Si{sub 2} -- to be used in low enriched (LEU < 20% {sup 235}U) fuel elements for research reactors. Miniplates with these fuel materials were manufactured at CNEA and were irradiated in the ORR in three series of irradiations as part of the RERTR miniplate irradiation program. The first irradiation contained U{sub 3}O{sub 8} and UAl{sub x} fuel, the second U{sub 3}O{sub 8}, UAl{sub x} and U{sub 3}Si, while the third irradiation test consisted of six U{sub 3}Si{sub 2} miniplates and one U{sub 3}Si miniplate. This third test is the subject of this paper. The present results compare favorably with other irradiations performed in the RERTR program{sup 1,2} showing in particular the excellent behavior of the U{sub 3}Si{sub 2}. The overall data accumulated support the qualification of the CNEA fabrication techniques. 5 refs., 13 figs., 3 tabs.

  3. Three novel triazine-based materials with different O/S/N set of donor atoms: One-step preparation and comparison of their capability in selective separation of uranium.

    PubMed

    Bai, Chiyao; Zhang, Meicheng; Li, Bo; Tian, Yin; Zhang, Shuang; Zhao, Xiaosheng; Li, Yang; Wang, Lei; Ma, Lijian; Li, Shoujian

    2015-12-30

    Cyanuric chloride was chosen as a core skeleton which reacted with desired linker molecules, urea, thiourea and thiosemicarbazide, to prepare three novel functional covalent triazine-based frameworks, CCU (O-donor set), CCTU (S-donor set) and CCTS (S, N-donor set) respectively, designed for selective adsorption of U(VI). The products have high nitrogen concentration (>30 wt%), regular structure, relatively high chemical and thermal stability. Adsorption behaviors of the products on U(VI) were examined by batch experiments. CCU and CCTU can extract U(VI) from simulated nuclear industrial effluent containing 12 co-existing cations with relatively high selectivity (54.4% and 54.2%, respectively). Especially, effects of donor atoms O/S on adsorption were investigated, and the outcomes indicate that the difference in coordinating ability between the donor atoms is weakened in large conjugated systems, and the related functional groups with originally very strong coordination abilities may not be the best choice for the application in selective adsorption of uranium and also other metals. The as-proposed approach can easily be expanded into design and preparation of new highly efficient adsorbents for selective separation and recovery of uranium through adjusting the structures, types and amounts of functional groups of adsorbents by choosing suitable linkers. PMID:26218304

  4. Oxidation/vaporization of silicide coated columbium base alloys

    NASA Technical Reports Server (NTRS)

    Kohl, F. J.; Stearns, C. A.

    1971-01-01

    Mass spectrometric and target collection experiments were made at 1600 K to elucidate the mode of oxidative vaporization of two columbium alloys, fused-slurry-coated with a complex silicide former (Si-20Cr-Fe). At oxygen pressures up to 0.0005 torr the major vapor component detected by mass spectrometry for oxidized samples was gaseous silicon monoxide. Analysis of condensates collected at oxygen pressures of 0.1, 1.0 and 10 torr revealed that chromium-, silicon-, iron- and tungsten- containing species were the major products of vaporization. Equilibrium thermochemical diagrams were constructed for the metal-oxygen system corresponding to each constituent metal in both the coating and base alloy. The major vaporizing species are expected to be the gaseous oxides of chromium, silicon, iron and tungsten. Plots of vapor phase composition and maximum vaporization rate versus oxygen pressure were calculated for each coating constituent. The major contribution to weight loss by vaporization at oxygen pressures above 1 torr was shown to be the chromium-containing species.

  5. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

    PubMed Central

    Babenko, Vitaliy; Murdock, Adrian T.; Koós, Antal A.; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A.; Nicholas, Robin J.; Grobert, Nicole

    2015-01-01

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min−1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials. PMID:26175062

  6. New Manganese Silicide Mineral Phase in an Interplanetary Dust Particle

    NASA Technical Reports Server (NTRS)

    Nakamura-Messenger, K.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Palma, R. L.; Pepin, R. O.; Kloeck, W.; Zolensky, M. E.; Messenger, S.

    2008-01-01

    Comet 26P/Grigg-Skjellerup was identified as a source of an Earth-crossing dust stream with low Earth-encounter velocities, with peak anticipated fluxes during April in 2003 and 2004 [1]. In response to this prediction, NASA performed dedicated stratospheric dust collections using high altitude aircraft to target potential interplanetary dust particles (IDPs) from this comet stream in April 2003. Several IDPs from this collection have shown unusually low noble gas abundances [2] consistent with the predicted short space exposure ages of Grigg-Skjellerup dust particles [1]. High abundances of large D enrichments [3] and presolar grains [4] in IDPs from this collection are also consistent with an origin from the comet Grigg-Skjellerup. Here we report a new mineral from one of the cluster IDPs of the "Grigg-Skjellerup" collection, L2055. Our report focuses on an unusual manganese-iron-chromium silicide phase that, to our knowledge, has not been observed previously in nature. This unique phase may also shed light on the genesis of the enigmatic low-Fe,Mn-enriched (LIME) olivine that has been previously reported in IDPs and meteorites [5].

  7. Thermal Conductivity Measurement of Liquid-Quenched Higher Manganese Silicides

    NASA Astrophysics Data System (ADS)

    Nishino, Shunsuke; Miyata, Masanobu; Ohdaira, Keisuke; Koyano, Mikio; Takeuchi, Tsunehiro

    2016-03-01

    Higher manganese silicides (HMSs, MnSi γ , γ ˜ 1.75) show promise for use as low-cost and environmentally friendly thermoelectric materials. To reduce their thermal conductivity, we partially substituted the Mn site with heavy elements using liquid quenching. Fabricated samples possess a curly ribbon-shape with about a 10- μm thickness and 1-mm width, with high surface roughness. In this study, we determined the thermal conductivity of the curly-ribbon-shaped samples using two independent methods: the 3 ω method with two heat flow models, and the steady-state method using a physical property measurement system (PPMS; Quantum Design). We succeeded in estimating the thermal conductivity at the temperature range of 100-200 K using the PPMS. The estimated thermal conductivity of non-doped HMSs shows a constant value without temperature dependence of 2.2 ± 0.8 W K-1m-1 at 100-200 K. The difference of thermal conductivities of W-doped and non-doped HMSs was not recognized within the measurement error.

  8. Selective Silicidation of Co Using Silane or Disilane for Anti-Oxidation Barrier Layer in Cu Metallization

    NASA Astrophysics Data System (ADS)

    Noda, Suguru; Hirai, Rika; Komiyama, Hiroshi; Shimogaki, Yukihiro

    2004-09-01

    Aiming to realize a conductive passivation layer for copper interconnection, the solid-gas reactions of cobalt films with silane and with disilane to form cobalt silicides are experimentally investigated. X-ray photoelectron spectroscopy revealed that cobalt silicides layers of up to 6 nm thickness can be selectively formed in the reaction at 473-673 K within 5 min without detectable silicon deposition on silicon dioxide, a common inter-metal dielectric layer. Rapid thermal oxidation experiments revealed that the silicided cobalt layers had better anti-oxidation performance than untreated cobalt layers, and the effect of silicidation was to suppress copper out-diffusion through the cobalt layers. Because cobalt-based alloys can be selectively electroless-plated on copper, selective silicidation of cobalt layers will be easily incorporated into device processing.

  9. Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides

    NASA Astrophysics Data System (ADS)

    Geenen, F. A.; Knaepen, W.; Moens, F.; Brondeel, L.; Leenaers, A.; Van den Berghe, S.; Detavernier, C.

    2016-07-01

    Silicon or germanium-based transistors are nowadays used in direct contact with silicide or germanide crystalline alloys for semiconductor device applications. Since these compounds are formed at elevated temperatures, accurate knowledge of the thermal expansion of both substrate and the contact is important to address temperature depending effects such as thermal stress. Here we report the linear coefficients of thermal expansion of Ni-, Pd- and Pt-based mono-germanides, mono-silicides and di-metal-silicides as determined by powder-based x-ray diffraction between 300 and 1225 K. The investigated mono-metallic compounds, all sharing the MnP crystal structure, as well as Pd2Si and Pt2Si exhibit anisotropic expansion. By consequence, this anisotropic behaviour should be taken into account for evaluating the crystal unit’s cell at elevated temperatures.

  10. Electrical and recombination properties of copper-silicide precipitates in silicon

    SciTech Connect

    Istratov, A.A. |; Heiser, T.; Flink, C.; Hieslmair, H.; Weber, E.R.; Hedemann, H.; Seibt, M.; Schroeter, W.; Vyvenko, O.F. |

    1998-11-01

    Copper-silicide precipitates in silicon obtained after copper diffusion and quench in different liquids were studied by transmission electron microscopy and capacitance spectroscopy techniques. A correlation between the quenching rate, geometric size, and deep level spectra of the copper-silicide precipitates was established. The unusually wide deep level spectra are shown to be due to a defect-related band in the bandgap. The parameters of the band are evaluated using numerical simulations. a positive charge of copper-silicide precipitates in p-type and moderately doped n-type Si is predicted by simulations and confirmed by minority carrier transient spectroscopy measurements. Strong recombination activity of the precipitates due to attraction of minority carriers by the electric field around the precipitates and their recombination via the defect band is predicted and confirmed by the experiments. The pairing of copper with boron is shown to be an important factor determining the precipitation kinetics of the interstitial copper at room temperature.

  11. Formation of nickel silicides by excimer laser CVD of Ni(CO)4

    NASA Astrophysics Data System (ADS)

    Borsella, E.; Kompa, Karl L.; Reiner, H.; Schroeder, Hartmut

    1990-08-01

    Nickel silicides have been grown on single crystal silicon sub- strates. A XeCl excimer laser was used for all process steps: substrate cleaning, nickel deposition , silicide formation and annealing. The nickel films were grown by photodecoxnposition of Ni(CO)4 adsorbate layers with an excess of CO to prevent homogeneous nucleation and hence the formation of dust. The samples were analysed by X-ray fluorescence, SIMS and RBS. The results indicate that epitaxial silicide layers with a thickness of 50 ma can be obtained after careful choice of laser fluence and Ni film thickness. In an alternative approach we used a molecular beam of Ni(CO)4, part of which is laser excited prior to impinging on the substrate. This allows the combination of CVD and conventional MBE techniques. In this experiment we also investigate the interaction of photofragments with substrate surfaces and other processes responsible for material deposition.

  12. Impact of additional Pt and NiSi crystal orientation on channel stress induced by Ni silicide film in metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Kudo, Shuichi; Hirose, Yukinori; Kimura, Hiroshi; Tsuchimoto, Jun-ichi; Hattori, Nobuyoshi

    2014-01-01

    The impact of additional Pt and Ni monosilicide (NiSi) crystal orientation on channel stress from Ni silicide in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been demonstrated. The channel stress generation mechanism can be explained by the NiSi crystal orientation. In pure Ni silicide films, the channel stress in the p-type substrate is much larger than that in the n-type one, since the NiSi a-axis parallel to the channel direction is strongly aligned on the p-type substrate compared with on the n-type one. On the other hand, in NiPt silicide films, the difference in the channel stress between the p- and n-type substrates is small, because the NiSi crystal orientation on the p-type substrate is similar to that on the n-type one. These results can be explained by the Pt segregation at the interface between the NiSi film and the Si surface. Segregated Pt atoms cause the NiSi b-axis to align normal to the Si(001) surface in the nucleation step owing to the expansion of the NiSi lattice spacing at the NiSi/Si interface. Furthermore, the Pt segregation mechanism is considered to be caused by the grain boundary diffusion in the Ni2Si film during NiSi formation. We confirmed that the grains of Ni2Si on the p-type substrate are smaller than those on the n-type one. The Ni2Si film on the p-type substrate has more grain boundary diffusion paths than that on the n-type one. Therefore, the amount of Pt segregation at the NiSi/Si interface on the p-type substrate is larger than that on the n-type one. Consequently, the number of NiSi grains with the b-axis aligned normal to the Si(001) in the p-type substrate is larger than that in the n-type one. As a result, the channel stress induced by NiPt silicide in PMOS is larger than that in NMOS. According to this mechanism, controlling the Pt concentration at the NiSi/Si interface is one of the key factors for channel stress engineering.

  13. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    NASA Astrophysics Data System (ADS)

    Mondon, A.; Wang, D.; Zuschlag, A.; Bartsch, J.; Glatthaar, M.; Glunz, S. W.

    2014-12-01

    In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel-silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide a continuous nickel silicide of greater depth, polycrystalline modification and expected phase according to thermal budget is formed. Information about the nature of silicide growth on typical solar cell surfaces could be obtained from silicide phase and geometric observations, which were supported by FIB tomography. The theory of isotropic NiSi growth and orientation dependent NiSi2 growth was derived. By this, a very well performing low-cost metallization for silicon solar cells has been brought an important step closer to industrial introduction.

  14. Silicide Nanopowders as Low-Cost and High-Performance Thermoelectric Materials

    NASA Astrophysics Data System (ADS)

    Chen, Renkun

    2013-06-01

    Thermoelectric devices directly convert heat into electricity and are very attractive for waste heat recovery and solar energy utilization. If thermoelectric devices can be made sufficiently efficient and inexpensive, then they will become a transformative energy technology that can tap a significant portion (10-20%) of the vast amount of heat existing in nature as well as industrial processes. Nanopowders of Earth-abundant, silicide-based materials, such as Mg2Si and its alloys, provide a unique opportunity to realize this goal. This article will present an overview of recent advances in the synthesis and thermoelectric properties of silicide-based nanostructured materials.

  15. An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Shreter, U.; Nicolet, M.-A.

    1985-01-01

    A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.

  16. URANIUM COMPOSITIONS

    DOEpatents

    Allen, N.P.; Grogan, J.D.

    1959-05-12

    This patent relates to high purity uranium alloys characterized by improved stability to thermal cycling and low thermal neutron absorption. The high purity uranium alloy contains less than 0.1 per cent by weight in total amount of any ore or more of the elements such as aluminum, silicon, phosphorous, tin, lead, bismuth, niobium, and zinc.

  17. Atom Probe Tomography of Nanoscale Electronic Materials

    SciTech Connect

    Larson, David J.; Prosa, Ty J.; Perea, Daniel E.; Inoue, Hidekazu; Mangelinck, D.

    2016-01-01

    Atom probe tomography (APT) is a mass spectrometry based on time-of-flight measurements which also concurrently produces 3D spatial information. The reader is referred to any of the other papers in this volume or to the following references for further information 4–8. The current capabilities of APT, such as detecting a low number of dopant atoms in nanoscale devices or segregation at a nanoparticle interface, make this technique an important component in the nanoscale metrology toolbox. In this manuscript, we review some of the applications of APT to nanoscale electronic materials, including transistors and finFETs, silicide contact microstructures, nanowires, and nanoparticles.

  18. Continuing investigations for technology assessment of /sup 99/Mo production from LEU (low enriched Uranium) targets

    SciTech Connect

    Vandergrift, G.F.; Kwok, J.D.; Marshall, S.L.; Vissers, D.R.; Matos, J.E.

    1987-01-01

    Currently much of the world's supply of /sup 99m/Tc for medical purposes is produced from /sup 99/Mo derived from the fissioning of high enriched uranium (HEU). The need for /sup 99m/Tc is continuing to grow, especially in developing countries, where needs and national priorities call for internal production of /sup 99/Mo. This paper presents the results of our continuing studies on the effects of substituting low enriched Uranium (LEU) for HEU in targets for the production of fission product /sup 99/Mo. Improvements in the electrodeposition of thin films of uranium metal are reported. These improvements continue to increase the appeal for the substitution of LEU metal for HEU oxide films in cylindrical targets. The process is effective for targets fabricated from stainless steel or hastaloy. A cost estimate for setting up the necessary equipment to electrodeposit uranium metal on cylindrical targets is reported. Further investigations on the effect of LEU substitution on processing of these targets are also reported. Substitution of uranium silicides for the uranium-aluminum alloy or uranium aluminide dispersed fuel used in other current target designs will allow the substitution of LEU for HEU in these targets with equivalent /sup 99/Mo-yield per target and no change in target geometries. However, this substitution will require modifications in current processing steps due to (1) the insolubility of uranium silicides in alkaline solutions and (2) the presence of significant quantities of silicate in solution. Results to date suggest that both concerns can be handled and that substitution of LEU for HEU can be achieved.

  19. Magneto-Transport Studies of Molecular Beam Epitaxial Grown Osmium Silicides

    NASA Astrophysics Data System (ADS)

    Cottier, Ryan; Zhao, Wei; Amir, Fatima; Hossain, Khalid; Anibou, Noureddine; Donner, Wolfgang; Golding, Terry

    2006-03-01

    Semiconducting transition metal silicides present a possible solution to on-chip integration of optical and electronic Si-based circuitry. Two phases of osmium silicide (OsSi2 and Os2Si3) are predicted to have promising optical characteristics but require additional development to fully determine their feasibility for high-quality devices. This study has been motivated by reports that OsSi2 has a bandgap between 1.4--1.8eV [1, 2] and Os2Si3 may have a direct bandgap of 0.95 eV [3] or 2.3 eV [1]. In this paper we will present temperature dependent (20 < T < 300 K) magneto Hall measurements of molecular beam epitaxial grown osmium silicide thin films. Os and Si were coevaporated onto Si(100) substrates at varying growth rates and temperatures. XRD was performed in order to identify the silicide phases present. We will discuss our results in relation to the known phase diagrams and our growth parameters. [1] L. Schellenberg et al., J. Less-Common Met. 144, 341 (1988). [2] K. Mason and G. Müller-Vogt, J. Appl. Phys. 63, 34 (1983). [3] A. B. Filonov et al., Phys. Rev. B 60(24), 16494 (1999).

  20. Radiation-associated lung cancer: A comparison of the histology of lung cancers in uranium miners and survivors of the atomic bombings of Hiroshima and Nagasaki

    SciTech Connect

    Land, C.E.; Shimosato, Y.; Saccomanno, G.; Tokuoka, S.; Auerbach, O.; Tateishi, R.; Greenberg, S.D.; Nambu, S.; Carter, D.; Akiba, S. )

    1993-05-01

    A binational panel of Japanese and American pulmonary pathologists reviewed tissue slides of lung cancer cases diagnosed among Japanese A-bomb survivors and American uranium miners and classified the cases according to histological subtype. Blind reviews were completed on slides from 92 uranium miners and 108 A-bomb survivors, without knowledge of population, sex, age, smoking history, or level of radiation exposure. Consensus diagnoses were obtained with respect to principal subtype, including squamous-cell cancer, small-cell cancer, adenocarcinoma, and less frequent subtypes. The results were analyzed in terms of population, radiation dose, and smoking history. As expected, the proportion of squamous-cell cancer was positively related to smoking history in both populations. The relative frequencies of small-cell cancer and adenocarcinoma were very different in the two populations, but this difference was accounted for adequately by differences in radiation dose or, more specifically, dose-based relative risk estimates based on published data. Radiation-induced cancers appeared more likely to be of the small-cell subtype, and less likely to be adenocarcinomas, in both populations. The data appeared to require no additional explanation in terms of radiation quality (alpha particles vs gamma rays), uniform or local irradiation, inhaled vs external radiation source, or other population difference.

  1. Contributions to the geology of uranium and thorium by the United States Geological Survey and Atomic Energy Commission for the United Nations International Conference on Peaceful Uses of Atomic Energy, Geneva, Switzerland, 1955

    USGS Publications Warehouse

    Page, Lincoln R.; Stocking, Hobart E.; Smith, Harriet B.

    1956-01-01

    Within the boundaries of the United States abnormal amounts of uranium have been found in rocks of nearly all geologic ages and lithologic types. Distribution of ore is more restricted. On the Colorado Plateau, the Morrison formation of Jurassic age yields 61.4 percent of the ore produced in the United States, and the Chinle conglomerate and Shinarump formation of Triassic age contribute 26.0 and 5.8 percent, respectively. Clastic, carbonaceous, and carbonate sedimentary rocks of Tertiary, Mesozoic, and Paleozoic ages and veins of Tertiary age are the source of the remaining 6.8 percent.

  2. Deposit model for volcanogenic uranium deposits

    USGS Publications Warehouse

    Breit, George N.; Hall, Susan M.

    2011-01-01

    The International Atomic Energy Agency's tabulation of volcanogenic uranium deposits lists 100 deposits in 20 countries, with major deposits in Russia, Mongolia, and China. Collectively these deposits are estimated to contain uranium resources of approximately 500,000 tons of uranium, which amounts to 6 percent of the known global resources. Prior to the 1990s, these deposits were considered to be small (less than 10,000 tons of uranium) with relatively low to moderate grades (0.05 to 0.2 weight percent of uranium). Recent availability of information on volcanogenic uranium deposits in Asia highlighted the large resource potential of this deposit type. For example, the Streltsovskoye district in eastern Russia produced more than 100,000 tons of uranium as of 2005; with equivalent resources remaining. Known volcanogenic uranium deposits within the United States are located in Idaho, Nevada, Oregon, and Utah. These deposits produced an estimated total of 800 tons of uranium during mining from the 1950s through the 1970s and have known resources of 30,000 tons of uranium. The most recent estimate of speculative resources proposed an endowment of 200,000 tons of uranium.

  3. Oxidation and crystal field effects in uranium

    NASA Astrophysics Data System (ADS)

    Tobin, J. G.; Yu, S.-W.; Booth, C. H.; Tyliszczak, T.; Shuh, D. K.; van der Laan, G.; Sokaras, D.; Nordlund, D.; Weng, T.-C.; Bagus, P. S.

    2015-07-01

    An extensive investigation of oxidation in uranium has been pursued. This includes the utilization of soft x-ray absorption spectroscopy, hard x-ray absorption near-edge structure, resonant (hard) x-ray emission spectroscopy, cluster calculations, and a branching ratio analysis founded on atomic theory. The samples utilized were uranium dioxide (U O2) , uranium trioxide (U O3) , and uranium tetrafluoride (U F4) . A discussion of the role of nonspherical perturbations, i.e., crystal or ligand field effects, will be presented.

  4. Oxidation and crystal field effects in uranium

    SciTech Connect

    Tobin, J. G.; Booth, C. H.; Shuh, D. K.; van der Laan, G.; Sokaras, D.; Weng, T. -C.; Yu, S. W.; Bagus, P. S.; Tyliszczak, T.; Nordlund, D.

    2015-07-06

    An extensive investigation of oxidation in uranium has been pursued. This includes the utilization of soft x-ray absorption spectroscopy, hard x-ray absorption near-edge structure, resonant (hard) x-ray emission spectroscopy, cluster calculations, and a branching ratio analysis founded on atomic theory. The samples utilized were uranium dioxide (UO2), uranium trioxide (UO3), and uranium tetrafluoride (UF4). As a result, a discussion of the role of non-spherical perturbations, i.e., crystal or ligand field effects, will be presented.

  5. Sputtering of uranium

    NASA Technical Reports Server (NTRS)

    Gregg, R.; Tombrello, T. A.

    1978-01-01

    Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

  6. A study of a zone approach to IAEA (International Atomic Energy Agency) safeguards: The low-enriched-uranium zone of a light-water-reactor fuel cycle

    SciTech Connect

    Fishbone, L.G.; Higinbotham, W.A.

    1986-06-01

    At present the IAEA designs its safeguards approach with regard to each type of nuclear facility so that the safeguards activities and effort are essentially the same for a given type and size of nuclear facility wherever it may be located. Conclusions regarding a state are derived by combining the conclusions regarding the effectiveness of safeguards for the individual facilities within a state. In this study it was convenient to define three zones in a state with a closed light-water-reactor nuclear fuel cycle. Each zone contains those facilities or parts thereof which use or process nuclear materials of the same safeguards significance: low-enriched uranium, radioactive spent fuel, or recovered plutonium. The possibility that each zone might be treated as an extended material balance area for safeguards purposes is under investigation. The approach includes defining the relevant features of the facilities in the three zones and listing the safeguards activities which are now practiced. This study has focussed on the fresh-fuel zone, the several facilities of which use or process low-enriched uranium. At one extreme, flows and inventories would be verified at each material balance area. At the other extreme, the flows into and out of the zone and the inventory of the whole zone would be verified. There are a number of possible safeguards approaches which fall between the two extremes. The intention is to develop a rational approach which will make it possible to compare the technical effectiveness and the inspection effort for the facility-oriented approach, for the approach involving the zone as a material balance area, and for some reasonable intermediate safeguards approaches.

  7. JACKETING URANIUM

    DOEpatents

    Saller, H.A.; Keeler, J.R.

    1959-07-14

    The bonding to uranium of sheathing of iron or cobalt, or nickel, or alloys thereof is described. The bonding is accomplished by electro-depositing both surfaces to be joined with a coating of silver and amalgamating or alloying the silver layer with mercury or indium. Then the silver alloy is homogenized by exerting pressure on an assembly of the uranium core and the metal jacket, reducing the area of assembly and heating the assembly to homogenize by diffusion.

  8. Impact of silicide layer on single photon avalanche diodes in a 130 nm CMOS process

    NASA Astrophysics Data System (ADS)

    Cheng, Zeng; Palubiak, Darek; Zheng, Xiaoqing; Deen, M. Jamal; Peng, Hao

    2016-09-01

    Single photon avalanche diode (SPAD) is an attractive solid-state optical detector that offers ultra-high photon sensitivity (down to the single photon level), high speed (sub-nanosecond dead time) and good timing performance (less than 100 ps). In this work, the impact of the silicide layer on SPAD’s characteristics, including the breakdown voltage, dark count rate (DCR), after-pulsing probability and photon detection efficiency (PDE) is investigated. For this purpose, two sets of SPAD structures in a standard 130 nm complementary metal oxide semiconductor (CMOS) process are designed, fabricated, measured and compared. A factor of 4.5 (minimum) in DCR reduction, and 5 in PDE improvements are observed when the silicide layer is removed from the SPAD structure. However, the after-pulsing probability of the SPAD without silicide layer is two times higher than its counterpart with silicide. The reasons for these changes will be discussed.

  9. Fused slurry silicide coatings for columbium alloy reentry heat shields. Volume 2: Experimental and coating process details

    NASA Technical Reports Server (NTRS)

    Fitzgerald, B.

    1973-01-01

    The experimental and coating process details are presented. The process specifications which were developed for the formulation and application of the R-512E fused slurry silicide coating using either an acrylic or nitrocellulose base slurry system is also discussed.

  10. Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

    PubMed

    Liu, Zhihong; Zhang, Hui; Wang, Lei; Yang, Deren

    2008-09-17

    Nickel silicide nanowire arrays have been achieved by the decomposition of SiH(4) on Ni foil at 650 °C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200 nm and tips with diameter of about 10-50 nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7 V µm(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as emitters. PMID:21832554

  11. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    SciTech Connect

    Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

  12. Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

    DOEpatents

    Travelli, A.

    1985-10-25

    A flat or curved plate structure, to be used as fuel in a nuclear reactor, comprises elongated fissionable wires or strips embedded in a metallic continuous non-fissionable matrix plate. The wires or strips are made predominantly of a malleable uranium alloy, such as uranium silicide, uranium gallide or uranium germanide. The matrix plate is made predominantly of aluminum or an aluminum alloy. The wires or strips are located in a single row at the midsurface of the plate, parallel with one another and with the length dimension of the plate. The wires or strips are separated from each other, and from the surface of the plate, by sufficient thicknesses of matrix material, to provide structural integrity and effective fission product retention, under neutron irradiation. This construction makes it safely feasible to provide a high uranium density, so that the uranium enrichment with uranium 235 may be reduced below about 20%, to deter the reprocessing of the uranium for use in nuclear weapons.

  13. Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

    DOEpatents

    Travelli, Armando

    1988-01-01

    A flat or curved plate structure, to be used as fuel in a nuclear reactor, comprises elongated fissionable wires or strips embedded in a metallic continuous non-fissionable matrix plate. The wires or strips are made predominantly of a malleable uranium alloy, such as uranium silicide, uranium gallide or uranium germanide. The matrix plate is made predominantly of aluminum or an aluminum alloy. The wires or strips are located in a single row at the midsurface of the plate, parallel with one another and with the length dimension of the plate. The wires or strips are separated from each other, and from the surface of the plate, by sufficient thicknesses of matrix material, to provide structural integrity and effective fission product retention, under neutron irradiation. This construction makes it safely feasible to provide a high uranium density, so that the uranium enrichment with uranium 235 may be reduced below about 20%, to deter the reprocessing of the uranium for use in nuclear weapons.

  14. Local atomic structure of chromium bearing precipitates in chromia doped uranium dioxide investigated by combined micro-beam X-ray diffraction and absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Kuri, G.; Mieszczynski, C.; Martin, M.; Bertsch, J.; Borca, C. N.; Delafoy, Ch.

    2014-06-01

    Experimental studies have evidenced the presence of some chromium oxide precipitates in chromia (Cr2O3) doped UO2 fuels, currently being used in many light water reactors. The main objective of this study was to analyze the atomic scale microstructure of these precipitates in a non-destructive way employing modern synchrotron-based X-ray radiation. To investigate UO2 microstructures and chemical compositions of the precipitates an industrial grade fresh Cr2O3-doped UO2 pellet (produced with an initial amount of 0.16 wt.% Cr2O3 powder) was examined using scanning electron microscopy (SEM) and electron probe micro analysis (EPMA). Average grain diameter of the UO2 matrix was measured by SEM image analysis method. Precipitates were detected by EPMA. For all precipitates of micrometer scale analyzed by EPMA the composition was determined to be very close to Cr2O3. The structural property and the next neighbor Cr atomic environment in these precipitates were studied by a combination of more sensitive tools such as micro-focused X-ray diffraction (μ-XRD) and absorption spectroscopy (μ-XAS). According to the XRD data, the chromia precipitates contain structural disorder and have a somewhat distorted lattice structure as compared to that of standard and crystalline α-Cr2O3 hexagonal crystal unit cell. The μ-XAS results provide insight into the local atomic environment of chromium including the oxidation state assignment.

  15. Iron silicide root formation in carbon nanotubes grown by microwave PECVD.

    PubMed

    AuBuchon, Joseph F; Daraio, Chiara; Chen, Li-Han; Gapin, Andrew I; Jin, Sungho

    2005-12-29

    Aligned carbon nanotubes have been grown using microwave plasma enhanced chemical vapor deposition (PECVD). The carbon nanotubes are nucleated from iron catalyst particles which, during growth, remain adherent to the silicon substrates. By analysis with high-resolution electron microscopy, we observe iron silicide roots penetrating into the silicon substrate at the interface of the catalyst particles and the substrate, thus providing strong adhesion of the carbon nanotubes onto the substrate. The iron silicide roots assist in the attachment of the catalyst particles to the substrate and play a role in the evolution of the catalyst particle morphology and resulting base growth mode. Carbon nanotubes grown by microwave PECVD could exhibit superior electrical and thermal transport properties over other PECVD processes, so an understanding of the growth mechanism is important for utilization in device applications. PMID:16375415

  16. Medium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100)

    NASA Astrophysics Data System (ADS)

    Wood, T. J.; Eames, C.; Bonet, C.; Reakes, M. B.; Noakes, T. C. Q.; Bailey, P.; Tear, S. P.

    2008-07-01

    We have used medium-energy ion scattering (MEIS) to quantitatively analyze the structure of holmium silicide islands grown on the Si(100) surface. Structure fitting to the experimental data unambiguously shows that the tetragonal silicide phase is present and not the hexagonal phase, which is associated with the growth of nanowires at submonolayer coverages. Islands formed with a lower holmium coverage of 3 ML are also shown to be tetragonal, which suggests that the hexagonal structure is not a low coverage precursor to the growth of the tetragonal phase. MEIS simulations of large nanoislands, which include the effects of lateral strain relief, have been performed and these compare well with the experimental data.

  17. Development of a fused slurry silicide coating for the protection of tantalum alloys

    NASA Technical Reports Server (NTRS)

    Packer, C. M.; Perkins, R. A.

    1974-01-01

    Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

  18. Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

    SciTech Connect

    Pizzocchero, Filippo; Bøggild, Peter; Booth, Timothy J.

    2013-09-21

    We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035 °C in an Ar/H{sub 2} atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide channels, which are aligned with the intersections of the (100) surface of the wafer and the (110) planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission electron microscopy of focused ion beam fabricated lammelas and trenches in the structure to elucidate the process of their formation.

  19. Growth of single-crystalline cobalt silicide nanowires and their field emission property

    PubMed Central

    2013-01-01

    In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters. PMID:23819795

  20. Development of fused slurry silicide coatings for tantalum reentry heat shields

    NASA Technical Reports Server (NTRS)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    A fused slurry silicide coating was developed to provide atmospheric reentry protection for the 90Ta-lOW alloy. Overlaying the silicide with a highly refractory glass greatly improved total lifetime and reliability of the coating system. Low pressure, slow cycle lifetimes in excess of 100 cycles were consistently recorded for 1700 K - 13 and 1300 N/sq m test conditions. A minimum of 25 cycles was obtained for 1810 K - 1300 N/sq m conditions. About 50 simulated reentry cycles (variable temperature, pressure, and stress) were endured by coated 1-inch miniature heat shield panels when exposed to a maximum of 1700 K and either internal or external pressure conditions.

  1. Tramp uranium

    SciTech Connect

    Hendrixson, E.S.; Williamson, T.G.

    1988-01-01

    Many utilities have implemented a no leaker philosophy for fuel performance and actively pursue removing leaking fuel assemblies from their reactor cores whenever a leaking fuel assembly is detected. Therefore, the only source for fission product activity in the RCS when there are no leaking fuel assemblies is tramp uranium. A technique has been developed that strips uranium impurities from ZrCl{sub 4}. Unless efforts are made to remove natural uranium impurities from reactor materials, the utilities will not be able to reduce the RCS specific {sup 131}I activity in PWRs to below the lower limit of {approximately}1.0 x 10{minus{sup 4}} {mu}Ci/g.

  2. Silicide Coating Fabricated by HAPC/SAPS Combination to Protect Niobium Alloy from Oxidation.

    PubMed

    Sun, Jia; Fu, Qian-Gang; Guo, Li-Ping; Wang, Lu

    2016-06-22

    A combined silicide coating, including inner NbSi2 layer and outer MoSi2 layer, was fabricated through a two-step method. The NbSi2 was deposited on niobium alloy by halide activated pack cementation (HAPC) in the first step. Then, supersonic atmospheric plasma spray (SAPS) was applied to obtain the outer MoSi2 layer, forming a combined silicide coating. Results show that the combined coating possessed a compact structure. The phase constitution of the combined coating prepared by HAPC and SAPS was NbSi2 and MoSi2, respectively. The adhesion strength of the combined coating increased nearly two times than that for single sprayed coating, attributing to the rougher surface of the HAPC-bond layer whose roughness increased about three times than that of the grit-blast substrate. After exposure at 1200 °C in air, the mass increasing rate for single HAPC-silicide coating was 3.5 mg/cm(2) because of the pest oxidation of niobium alloy, whereas the combined coating displayed better oxidation resistance with a mass gain of only 1.2 mg/cm(2). Even more, the combined coating could significantly improve the antioxidation ability of niobium based alloy at 1500 °C. The good oxidation resistance of the combined silicide coating was attributed to the integrity of the combined coating and the continuous SiO2 protective scale provided by the oxidation of MoSi2. PMID:27243944

  3. Practical field repair of fused slurry silicide coating for space shuttle t.p.s.

    NASA Technical Reports Server (NTRS)

    Reznik, B. D.

    1971-01-01

    Study of short-time high-temperature diffusion treatments as part of a program of development of methods of reapplying fused slurry silicide coating in the field. The metallographic structure and oxidation behavior of R512E applied to Cb-752 coated under simulated field repair conditions was determined. Oxidation testing in reduced pressure environment has shown that performance equivalent to furnace-processed specimens can be obtained in a two-minute diffusion at 2700 F.

  4. Mortality among uranium enrichment workers

    SciTech Connect

    Brown, D.P.; Bloom, T.

    1987-01-01

    A retrospective cohort mortality study was conducted on workers at the Portsmouth Uranium Enrichment facility in Pike County, Ohio, in response to a request from the Oil, Chemical and Atomic Workers International Local 3-689 for information on long-term health effects. Primary hazards included inhalation exposure to uranyl fluoride containing uranium-235 and uranium-234, technetium-99 compounds, and hydrogen-fluoride. Uranium-238 presented a nephrotoxic hazard. Statistically significant mortality deficits based on U.S. death rates were found for all causes, accidents, violence, and diseases of nervous, circulatory, respiratory, and digestive systems. Standardized mortality rates were 85 and 54 for all malignant neoplasms and for other genitourinary diseases, respectively. Deaths from stomach cancer and lymphatic/hematopoietic cancers were insignificantly increased. A subcohort selected for greatest potential uranium exposure has reduced deaths from these malignancies. Insignificantly increased stomach cancer mortality was found after 15 years employment and after 15 years latency. Routine urinalysis data suggested low internal uranium exposures.

  5. Uranium bombs

    NASA Astrophysics Data System (ADS)

    DeGroot, Gerard

    2009-11-01

    Enrico Fermi was a brilliant physicist, but he did occasionally get things wrong. In 1934 he famously bombarded a sample of uranium with neutrons. The result was astounding: the experiment had, Fermi concluded, produced element 93, later called neptunium. The German physicist Ida Noddack, however, came to an even more spectacular conclusion, namely that Fermi had split the uranium nucleus to produce lighter elements. Noddack's friend Otto Hahn judged that idea preposterous and advised her to keep quiet, since ridicule could ruin a female physicist. She ignored that advice, and was, indeed, scorned.

  6. Measurements of uranium mass confined in high density plasmas

    NASA Technical Reports Server (NTRS)

    Stoeffler, R. C.

    1976-01-01

    An X-ray absorption method for measuring the amount of uranium confined in high density, rf-heated uranium plasmas is described. A comparison of measured absorption of 8 keV X-rays with absorption calculated using Beer Law indicated that the method could be used to measure uranium densities from 3 times 10 to the 16th power atoms/cu cm to 5 times 10 to the 18th power atoms/cu cm. Tests were conducted to measure the density of uranium in an rf-heated argon plasma with UF6 infection and with the power to maintain the discharge supplied by a 1.2 MW rf induction heater facility. The uranium density was measured as the flow rate through the test chamber was varied. A maximum uranium density of 3.85 times 10 to the 17th power atoms/cu cm was measured.

  7. Durability of Silicide-Based Thermoelectric Modules at High Temperatures in Air

    NASA Astrophysics Data System (ADS)

    Funahashi, Ryoji; Matsumura, Yoko; Barbier, Tristan; Takeuchi, Tomonari; Suzuki, Ryosuke O.; Katsuyama, Shigeru; Yamamoto, Atsushi; Takazawa, Hiroyuki; Combe, Emmanuel

    2015-08-01

    Thermoelectric modules consisting of n-type Mn2.7Cr0.3Si4Al2 and p-type MnSi1.75 legs have been fabricated by use of composite pastes of Ag with Pt or Pd. For the module prepared by Ni-B plating and with Ag paste, the specific power density reached 370 mW/cm2 at a heat-source temperature of 873 K. Ni-B plating 5 μm thick on the surfaces of the silicide legs reduced both the internal resistance and degradation of the power generated by silicide modules at temperatures up to 873 K in air. This is because of oxidation of Al diffusing into the n-type legs and reaching the Ag electrodes on both the hot and cold sides. Ni-B plating can suppress Al diffusion into n-type legs. However, cracking was observed parallel to the contact surface in the middle of the Ni-B plating layer on the p-type legs. It was also found that incorporating Pt or Pd into the Ag paste effectively suppressed degradation of the contact resistance between the silicide legs and the Ag electrodes.

  8. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    NASA Astrophysics Data System (ADS)

    Yuryev, V. A.; Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-01

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si3N4/SiO2/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about -2%/ °C in the temperature interval from 25 to 50 °C.

  9. Palladium silicide formation under the influence of nitrogen and oxygen impurities

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

    1985-01-01

    The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

  10. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    SciTech Connect

    Yuryev, V. A. Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-28

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.