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Sample records for average power semiconductor

  1. High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.

    PubMed

    Rudin, B; Wittwer, V J; Maas, D J H C; Hoffmann, M; Sieber, O D; Barbarin, Y; Golling, M; Südmeyer, T; Keller, U

    2010-12-20

    High-power ultrafast lasers are important for numerous industrial and scientific applications. Current multi-watt systems, however, are based on relatively complex laser concepts, for example using additional intracavity elements for pulse formation. Moving towards a higher level of integration would reduce complexity, packaging, and manufacturing cost, which are important requirements for mass production. Semiconductor lasers are well established for such applications, and optically-pumped vertical external cavity surface emitting lasers (VECSELs) are most promising for higher power applications, generating the highest power in fundamental transverse mode (>20 W) to date. Ultrashort pulses have been demonstrated using passive modelocking with a semiconductor saturable absorber mirror (SESAM), achieving for example 2.1-W average power, sub-100-fs pulse duration, and 50-GHz pulse repetition rate. Previously the integration of both the gain and absorber elements into a single wafer was demonstrated with the MIXSEL (modelocked integrated external-cavity surface emitting laser) but with limited average output power (<200 mW). We have demonstrated the power scaling concept of the MIXSEL using optimized quantum dot saturable absorbers in an antiresonant structure design combined with an improved thermal management by wafer removal and mounting of the 8-µm thick MIXSEL structure directly onto a CVD-diamond heat spreader. The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser. PMID:21197032

  2. Average power constraints in AlGaAs semiconductor lasers under pulse-position-modulation conditions

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1986-01-01

    In some optical communications systems there are advantages to using low duty-cycle pulsed modulation formats such as pulse-position-modulation. However, because of intrinsic limitations of AlGaAs semiconductor lasers, the average power that they can deliver in a pulsed mode of operation is lower than in a CW mode. The magnitude of this problem and its implications are analyzed in this letter, and one possible solution is mentioned.

  3. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    SciTech Connect

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL`s). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL`s which are appropriate for material processing applications, low and intermediate average power DPSSL`s are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications.

  4. New developments in power semiconductors

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1983-01-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  5. High average power pockels cell

    DOEpatents

    Daly, Thomas P.

    1991-01-01

    A high average power pockels cell is disclosed which reduces the effect of thermally induced strains in high average power laser technology. The pockels cell includes an elongated, substantially rectangular crystalline structure formed from a KDP-type material to eliminate shear strains. The X- and Y-axes are oriented substantially perpendicular to the edges of the crystal cross-section and to the C-axis direction of propagation to eliminate shear strains.

  6. Semiconductor ac static power switch

    NASA Technical Reports Server (NTRS)

    Vrancik, J.

    1968-01-01

    Semiconductor ac static power switch has long life and high reliability, contains no moving parts, and operates satisfactorily in severe environments, including high vibration and shock conditions. Due to their resistance to shock and vibration, static switches are used where accidental switching caused by mechanical vibration or shock cannot be tolerated.

  7. Hybrid power semiconductor

    NASA Technical Reports Server (NTRS)

    Chen, D. Y.

    1985-01-01

    The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit. One FET is used to drive the bipolar transistor while the other FET is connected in series with the transistor and an inductive load. Both FETs are turned on or off by a single drive signal of load power, the second FET upon ceasing conductions, rendering one power electrode of the bipolar transistor open. Means are provided to dissipate currents which flow after the bipolar transistor is rendered nonconducting.

  8. Optimization of high average power FEL beam for EUV lithography

    NASA Astrophysics Data System (ADS)

    Endo, Akira

    2015-05-01

    Extreme Ultraviolet Lithography (EUVL) is entering into high volume manufacturing (HVM) stage, with high average power (250W) EUV source from laser produced plasma at 13.5nm. Semiconductor industry road map indicates a scaling of the source technology more than 1kW average power by high repetition rate FEL. This paper discusses on the lowest risk approach to construct a prototype based on superconducting linac and normal conducting undulator, to demonstrate a high average power 13.5nm FEL equipped with optimized optical components and solid state lasers, to study FEL application in EUV lithography.

  9. High-Average Power Facilities

    SciTech Connect

    Dowell, David H.; Power, John G.; /Argonne

    2012-09-05

    There has been significant progress in the development of high-power facilities in recent years yet major challenges remain. The task of WG4 was to identify which facilities were capable of addressing the outstanding R&D issues presently preventing high-power operation. To this end, information from each of the facilities represented at the workshop was tabulated and the results are presented herein. A brief description of the major challenges is given, but the detailed elaboration can be found in the other three working group summaries.

  10. High average power induction accelerators

    SciTech Connect

    Swingle, J.C.

    1985-10-01

    The induction accelerator is discussed with respect to general background and concept, beam transport, scaling, pulse power technology, and the electron beam injector. A discussion of the factors which affect the scaling of the intensity of the beam is given. Limiting factors include collective forces in the beam, virtual cathode formation, surroundings, and beam breakup instability. 24 refs., 11 figs. (WRF)

  11. Space station power semiconductor package

    NASA Technical Reports Server (NTRS)

    Balodis, Vilnis; Berman, Albert; Devance, Darrell; Ludlow, Gerry; Wagner, Lee

    1987-01-01

    A package of high-power switching semiconductors for the space station have been designed and fabricated. The package includes a high-voltage (600 volts) high current (50 amps) NPN Fast Switching Power Transistor and a high-voltage (1200 volts), high-current (50 amps) Fast Recovery Diode. The package features an isolated collector for the transistors and an isolated anode for the diode. Beryllia is used as the isolation material resulting in a thermal resistance for both devices of .2 degrees per watt. Additional features include a hermetical seal for long life -- greater than 10 years in a space environment. Also, the package design resulted in a low electrical energy loss with the reduction of eddy currents, stray inductances, circuit inductance, and capacitance. The required package design and device parameters have been achieved. Test results for the transistor and diode utilizing the space station package is given.

  12. High Average Power Yb:YAG Laser

    SciTech Connect

    Zapata, L E; Beach, R J; Payne, S A

    2001-05-23

    We are working on a composite thin-disk laser design that can be scaled as a source of high brightness laser power for tactical engagement and other high average power applications. The key component is a diffusion-bonded composite comprising a thin gain-medium and thicker cladding that is strikingly robust and resolves prior difficulties with high average power pumping/cooling and the rejection of amplified spontaneous emission (ASE). In contrast to high power rods or slabs, the one-dimensional nature of the cooling geometry and the edge-pump geometry scale gracefully to very high average power. The crucial design ideas have been verified experimentally. Progress this last year included: extraction with high beam quality using a telescopic resonator, a heterogeneous thin film coating prescription that meets the unusual requirements demanded by this laser architecture, thermal management with our first generation cooler. Progress was also made in design of a second-generation laser.

  13. Research coordination for power semiconductor technology

    SciTech Connect

    Hingorani, N.G.; Mehta, H. ); Levy, S. ); Temple, V.A.K.; Glascock, H. )

    1989-09-01

    A National Power Semiconductor Interagency/Utility Consortium has been formed to coordinate U.S. research activities for development of materials and technologies related to high-power semiconductors - a field sometimes called the second electronics revolution. The history, activities, and investment strategy of this Consortium are described briefly. A variety of the most promising power electronics devices considered by the Consortium are discussed, leading to the conclusion that field-effect transistors and Metal-Oxide Semiconductor (MOS) controlled thyristors (MCTs) will eventually dominate power-switching applications. New packaging techniques are also presented, in which silicon is used to replace bulky ceramic insulators and copper contacts - an arrangement that promises to lower costs and weight while improving devices performance and life. Finally, the article reviews policy issues related to power semiconductor research and recommends that R and D in this field be treated as a leading national priority.

  14. HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS.

    SciTech Connect

    BEN-ZVI, ILAN, DAYRAN, D.; LITVINENKO, V.

    2005-08-21

    Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department.

  15. Power semiconductor device with negative thermal feedback

    NASA Technical Reports Server (NTRS)

    Borky, J. M.; Thornton, R. D.

    1970-01-01

    Composite power semiconductor avoids second breakdown and provides stable operation. It consists of an array of parallel-connected integrated circuits fabricated in a single chip. The output power device and associated low-level amplifier are closely coupled thermally, so that they have a predetermined temperature relationship.

  16. Average power laser experiment (APLE) design

    NASA Astrophysics Data System (ADS)

    Parazzoli, C. G.; Rodenburg, R. E.; Dowell, D. H.; Greegor, R. B.; Kennedy, R. C.; Romero, J. B.; Siciliano, J. A.; Tong, K.-O.; Vetter, A. M.; Adamski, J. L.; Pistoresi, D. J.; Shoffstall, D. R.; Quimby, D. C.

    1992-07-01

    We describe the details and the design requirements for the 100 kW CW radio frequency free electron laser at 10 μm to be built at Boeing Aerospace and Electronics Division in Seattle with the collaboration of Los Alamos National Laboratory. APLE is a single-accelerator master-oscillator and power-amplifier (SAMOPA) device. The goal of this experiment is to demonstrate a fully operational RF-FEL at 10 μm with an average power of 100 kW. The approach and wavelength were chosen on the basis of maximum cost effectiveness, including utilization of existing hardware and reasonable risk, and potential for future applications. Current plans call for an initial oscillator power demonstration in the fall of 1994 and full SAMOPA operation by December 1995.

  17. A power semiconductor test circuit with reduced power requirements

    NASA Technical Reports Server (NTRS)

    Been, J. F.

    1970-01-01

    Switching circuit utilizing silicon controlled rectifier reduces input power requirements normally associated with testing power semiconductors in an operational type mode. Circuit alleviates problems of inaccessibility, lack of large amounts of power, physical size of power resistors, wiring, and heat generation.

  18. High average power switching in diamond

    SciTech Connect

    Hofer, W.W.; Schoenbach, K.H.

    1992-06-01

    Diamond has many properties which make it ideal for a high power solid-state switch. The crystal structure of diamond is relatively well characterized. It is a semiconductor with a band-gap of 5.5 eV at 300{degree}K. The high band-gap of diamond results in a small dark current compared to Si or GaAs. As a result the breakdown field or holding voltage is very high, 1--10 MV/cm. The electron and hole mobility are approximately 2000 cm{sup 2}/v-sec. At room temperature, diamond has the highest thermal conductivity of any solid, 20 W/{degree}K -cm, about five times that of copper. This is ideal for switching because heat dissipation and thermal runaway problems are greatly mitigated. Our switch concept uses a low current (power on-off switch. Steady advancements in CVD polycrystalline and single crystal diamond help make this possible.

  19. High average power switching in diamond

    SciTech Connect

    Hofer, W.W. ); Schoenbach, K.H. )

    1992-06-01

    Diamond has many properties which make it ideal for a high power solid-state switch. The crystal structure of diamond is relatively well characterized. It is a semiconductor with a band-gap of 5.5 eV at 300[degree]K. The high band-gap of diamond results in a small dark current compared to Si or GaAs. As a result the breakdown field or holding voltage is very high, 1--10 MV/cm. The electron and hole mobility are approximately 2000 cm[sup 2]/v-sec. At room temperature, diamond has the highest thermal conductivity of any solid, 20 W/[degree]K -cm, about five times that of copper. This is ideal for switching because heat dissipation and thermal runaway problems are greatly mitigated. Our switch concept uses a low current (power on-off switch. Steady advancements in CVD polycrystalline and single crystal diamond help make this possible.

  20. High-Performance Power-Semiconductor Packages

    NASA Technical Reports Server (NTRS)

    Renz, David; Hansen, Irving; Berman, Albert

    1989-01-01

    A 600-V, 50-A transistor and 1,200-V, 50-A diode in rugged, compact, lightweight packages intended for use in inverter-type power supplies having switching frequencies up to 20 kHz. Packages provide low-inductance connections, low loss, electrical isolation, and long-life hermetic seal. Low inductance achieved by making all electrical connections to each package on same plane. Also reduces high-frequency losses by reducing coupling into inherent shorted turns in packaging material around conductor axes. Stranded internal power conductors aid conduction at high frequencies, where skin effect predominates. Design of packages solves historical problem of separation of electrical interface from thermal interface of high-power semiconductor device.

  1. Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

    SciTech Connect

    Ozpineci, B.

    2004-01-02

    Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.

  2. 16.2-W average power from a diode-pumped femtosecond Yb:YAG thin disk laser.

    PubMed

    Aus der Au, J; Spühler, G J; Südmeyer, T; Paschotta, R; Hövel, R; Moser, M; Erhard, S; Karszewski, M; Giesen, A; Keller, U

    2000-06-01

    We demonstrate a power-scalable concept for high-power all-solid-state femtosecond lasers, based on passive mode locking of Yb:YAG thin disk lasers with semiconductor saturable-absorber mirrors. We obtained 16.2 W of average output power in pulses with 730-fs duration, 0.47-muJ pulse energy, and 560-kW peak power. This is to our knowledge the highest average power reported for a laser oscillator in the subpicosecond regime. Single-pass frequency doubling through a 5-mm-long lithium triborate crystal (LBO) yields 8-W average output power of 515-nm radiation. PMID:18064208

  3. 152 W average power Tm-doped fiber CPA system.

    PubMed

    Stutzki, Fabian; Gaida, Christian; Gebhardt, Martin; Jansen, Florian; Wienke, Andreas; Zeitner, Uwe; Fuchs, Frank; Jauregui, Cesar; Wandt, Dieter; Kracht, Dietmar; Limpert, Jens; Tünnermann, Andreas

    2014-08-15

    A high-power thulium (Tm)-doped fiber chirped-pulse amplification system emitting a record compressed average output power of 152 W and 4 MW peak power is demonstrated. This result is enabled by utilizing Tm-doped photonic crystal fibers with mode-field diameters of 35 μm, which mitigate detrimental nonlinearities, exhibit slope efficiencies of more than 50%, and allow for reaching a pump-power-limited average output power of 241 W. The high-compression efficiency has been achieved by using multilayer dielectric gratings with diffraction efficiencies higher than 98%. PMID:25121845

  4. Average refractive powers of an alexandrite laser rod

    NASA Astrophysics Data System (ADS)

    Driedger, K. P.; Krause, W.; Weber, H.

    1986-04-01

    The average refractive powers (average inverse focal lengths) of the thermal lens produced by an alexandrite laser rod optically pumped at repetition rates between 0.4 and 10 Hz and with electrical flashlamp input pulse energies up to 500 J have been measured. The measuring setup is described and the measurement results are discussed.

  5. Synchronously pumped optical parametric oscillation in periodically poled lithium niobate with 1-w average output power.

    PubMed

    Graf, T; McConnell, G; Ferguson, A I; Bente, E; Burns, D; Dawson, M D

    1999-05-20

    We report on a rugged all-solid-state laser source of near-IR radiation in the range of 1461-1601 nm based on a high-power Nd:YVO(4) laser that is mode locked by a semiconductor saturable Bragg reflector as the pump source of a synchronously pumped optical parametric oscillator with a periodically poled lithium niobate crystal. The system produces 34-ps pulses with a high repetition rate of 235 MHz and an average output power of 1 W. The relatively long pulses lead to wide cavity detuning tolerances. The comparatively narrow spectral bandwidth of <15 GHz is suitable for applications such as pollutant detection. PMID:18319928

  6. High average power scaleable thin-disk laser

    DOEpatents

    Beach, Raymond J.; Honea, Eric C.; Bibeau, Camille; Payne, Stephen A.; Powell, Howard; Krupke, William F.; Sutton, Steven B.

    2002-01-01

    Using a thin disk laser gain element with an undoped cap layer enables the scaling of lasers to extremely high average output power values. Ordinarily, the power scaling of such thin disk lasers is limited by the deleterious effects of amplified spontaneous emission. By using an undoped cap layer diffusion bonded to the thin disk, the onset of amplified spontaneous emission does not occur as readily as if no cap layer is used, and much larger transverse thin disks can be effectively used as laser gain elements. This invention can be used as a high average power laser for material processing applications as well as for weapon and air defense applications.

  7. Neutron and gamma irradiation effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  8. Neutron and gamma irradiation effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  9. Neutron and gamma irradiation effects on power semiconductor switches

    SciTech Connect

    Schwarze, G.E.; Frasca, A.J.

    1994-09-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  10. High power semiconductor lasers for deep space communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1981-01-01

    The parameters of semiconductor lasers pertaining to their application as optical emitters are discussed. Several methods to overcome their basic disadvantage, which is the low level of powers they emit, are reviewed. Most of these methods are based on a coherent power combining of several lasers.

  11. High average power diode pumped solid state lasers for CALIOPE

    SciTech Connect

    Comaskey, B.; Halpin, J.; Moran, B.

    1994-07-01

    Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory`s water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW`s 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL`s first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers.

  12. HIGH AVERAGE POWER UV FREE ELECTRON LASER EXPERIMENTS AT JLAB

    SciTech Connect

    Douglas, David; Evtushenko, Pavel; Gubeli, Joseph; Hernandez-Garcia, Carlos; Legg, Robert; Neil, George; Powers, Thomas; Shinn, Michelle D; Tennant, Christopher; Williams, Gwyn

    2012-07-01

    Having produced 14 kW of average power at {approx}2 microns, JLAB has shifted its focus to the ultraviolet portion of the spectrum. This presentation will describe the JLab UV Demo FEL, present specifics of its driver ERL, and discuss the latest experimental results from FEL experiments and machine operations.

  13. High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser.

    PubMed

    Kisel, V E; Rudenkov, A S; Pavlyuk, A A; Kovalyov, A A; Preobrazhenskii, V V; Putyato, M A; Rubtsova, N N; Semyagin, B R; Kuleshov, N V

    2015-06-15

    A high-power, diode-pumped, semiconductor saturable absorber mode-locked Yb(5%):KGW bulk laser was demonstrated with high optical-to-optical efficiency. Average output power as high as 8.8 W with optical-to-optical efficiency of 37.5% was obtained for Nm-polarized laser output with 162 fs pulse duration and 142 nJ pulse energy at a pulse repetition frequency of 62 MHz. For Np polarization, 143 fs pulses with pulse energy of 139 nJ and average output power of up to 8.6 W with optical-to-optical efficiency of 31% were generated. PMID:26076242

  14. High-average-power diode-pumped Yb: YAG lasers

    SciTech Connect

    Avizonis, P V; Beach, R; Bibeau, C M; Emanuel, M A; Harris, D G; Honea, E C; Monroe, R S; Payne, S A; Skidmore, J A; Sutton, S B

    1999-10-01

    A scaleable diode end-pumping technology for high-average-power slab and rod lasers has been under development for the past several years at Lawrence Livermore National Laboratory (LLNL). This technology has particular application to high average power Yb:YAG lasers that utilize a rod configured gain element. Previously, this rod configured approach has achieved average output powers in a single 5 cm long by 2 mm diameter Yb:YAG rod of 430 W cw and 280 W q-switched. High beam quality (M{sup 2} = 2.4) q-switched operation has also been demonstrated at over 180 W of average output power. More recently, using a dual rod configuration consisting of two, 5 cm long by 2 mm diameter laser rods with birefringence compensation, we have achieved 1080 W of cw output with an M{sup 2} value of 13.5 at an optical-to-optical conversion efficiency of 27.5%. With the same dual rod laser operated in a q-switched mode, we have also demonstrated 532 W of average power with an M{sup 2} < 2.5 at 17% optical-to-optical conversion efficiency. These q-switched results were obtained at a 10 kHz repetition rate and resulted in 77 nsec pulse durations. These improved levels of operational performance have been achieved as a result of technology advancements made in several areas that will be covered in this manuscript. These enhancements to our architecture include: (1) Hollow lens ducts that enable the use of advanced cavity architectures permitting birefringence compensation and the ability to run in large aperture-filling near-diffraction-limited modes. (2) Compound laser rods with flanged-nonabsorbing-endcaps fabricated by diffusion bonding. (3) Techniques for suppressing amplified spontaneous emission (ASE) and parasitics in the polished barrel rods.

  15. Thermal effects in high average power optical parametric amplifiers.

    PubMed

    Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Peschel, Thomas; Limpert, Jens; Tünnermann, Andreas

    2013-03-01

    Optical parametric amplifiers (OPAs) have the reputation of being average power scalable due to the instantaneous nature of the parametric process (zero quantum defect). This Letter reveals serious challenges originating from thermal load in the nonlinear crystal caused by absorption. We investigate these thermal effects in high average power OPAs based on beta barium borate. Absorption of both pump and idler waves is identified to contribute significantly to heating of the nonlinear crystal. A temperature increase of up to 148 K with respect to the environment is observed and mechanical tensile stress up to 40 MPa is found, indicating a high risk of crystal fracture under such conditions. By restricting the idler to a wavelength range far from absorption bands and removing the crystal coating we reduce the peak temperature and the resulting temperature gradient significantly. Guidelines for further power scaling of OPAs and other nonlinear devices are given. PMID:23455291

  16. High average power supercontinuum generation in a fluoroindate fiber

    NASA Astrophysics Data System (ADS)

    Swiderski, J.; Théberge, F.; Michalska, M.; Mathieu, P.; Vincent, D.

    2014-01-01

    We report the first demonstration of Watt-level supercontinuum (SC) generation in a step-index fluoroindate (InF3) fiber pumped by a 1.55 μm fiber master-oscillator power amplifier (MOPA) system. The SC is generated in two steps: first ˜1 ns amplified laser diode pulses are broken up into soliton-like sub-pulses leading to initial spectrum extension and then launched into a fluoride fiber to obtain further spectral broadening. The pump MOPA system can operate at a changeable repetition frequency delivering up to 19.2 W of average power at 2 MHz. When the 8-m long InF3 fiber was pumped with 7.54 W at 420 kHz, output average SC power as high as 2.09 W with 27.8% of slope efficiency was recorded. The achieved SC spectrum spread from 1 to 3.05 μm.

  17. Industry-grade high average power femtosecond light source

    NASA Astrophysics Data System (ADS)

    Heckl, O. H.; Weiler, S.; Fleischhaker, R.; Gebs, R.; Budnicki, A.; Wolf, M.; Kleinbauer, J.; Russ, S.; Kumkar, M.; Sutter, D. H.

    2014-03-01

    Ultrashort pulses are capable of processing practically any material with negligible heat affected zone. Typical pulse durations for industrial applications are situated in the low picosecond-regime. Pulse durations of 5 ps or below are a well established compromise between the electron-phonon interaction time of most materials and the need for pulses long enough to suppress detrimental effects such as nonlinear interaction with the ablated plasma plume. However, sub-picosecond pulses can further increase the ablation efficiency for certain materials, depending on the available average power, pulse energy and peak fluence. Based on the well established TruMicro 5000 platform (first release in 2007, third generation in 2011) an Yb:YAG disk amplifier in combination with a broadband seed laser was used to scale the output power for industrial femtosecond-light sources: We report on a subpicosecond amplifier that delivers a maximum of 160 W of average output power at pulse durations of 750 fs. Optimizing the system for maximum peak power allowed for pulse energies of 850 μJ at pulse durations of 650 fs. Based on this study and the approved design of the TruMicro 5000 product-series, industrygrade, high average power femtosecond-light sources are now available for 24/7 operation. Since their release in May 2013 we were able to increase the average output power of the TruMicro 5000 FemtoEdition from 40 W to 80 W while maintaining pulse durations around 800 fs. First studies on metals reveal a drastic increase of processing speed for some micro processing applications.

  18. High Average Power, High Energy Short Pulse Fiber Laser System

    SciTech Connect

    Messerly, M J

    2007-11-13

    Recently continuous wave fiber laser systems with output powers in excess of 500W with good beam quality have been demonstrated [1]. High energy, ultrafast, chirped pulsed fiber laser systems have achieved record output energies of 1mJ [2]. However, these high-energy systems have not been scaled beyond a few watts of average output power. Fiber laser systems are attractive for many applications because they offer the promise of high efficiency, compact, robust systems that are turn key. Applications such as cutting, drilling and materials processing, front end systems for high energy pulsed lasers (such as petawatts) and laser based sources of high spatial coherence, high flux x-rays all require high energy short pulses and two of the three of these applications also require high average power. The challenge in creating a high energy chirped pulse fiber laser system is to find a way to scale the output energy while avoiding nonlinear effects and maintaining good beam quality in the amplifier fiber. To this end, our 3-year LDRD program sought to demonstrate a high energy, high average power fiber laser system. This work included exploring designs of large mode area optical fiber amplifiers for high energy systems as well as understanding the issues associated chirped pulse amplification in optical fiber amplifier systems.

  19. Kilowatt average-power laser for subpicosecond materials processing

    NASA Astrophysics Data System (ADS)

    Benson, Stephen V.; Neil, George R.; Bohn, Courtlandt L.; Biallas, George; Douglas, David; Dylla, H. Frederick; Fugitt, Jock; Jordan, Kevin; Krafft, Geoffrey; Merminga, Lia; Preble, Joe; Shinn, Michelle D.; Siggins, Tim; Walker, Richard; Yunn, Byung

    2000-04-01

    The performance of laser pulses in the sub-picosecond range for materials processing is substantially enhanced over similar fluences delivered in longer pulses. Recent advances in the development of solid state lasers have progressed significantly toward the higher average powers potentially useful for many applications. Nonetheless, prospects remain distant for multi-kilowatt sub-picosecond solid state systems such as would be required for industrial scale surface processing of metals and polymers. We present operation results from the world's first kilowatt scale ultra-fast materials processing laser. A Free Electron Laser (FEL) called the IR Demo is operational as a User Facility at Thomas Jefferson National Accelerator Facility in Newport News, Virginia, USA. In its initial operation at high average power it is capable of wavelengths in the 2 to 6 micron range and can produce approximately 0.7 ps pulses in a continuous train at approximately 75 MHz. This pulse length has been shown to be nearly optimal for deposition of energy in materials at the surface. Upgrades in the near future will extend operation beyond 10 kW CW average power in the near IR and kilowatt levels of power at wavelengths from 0.3 to 60 microns. This paper will cover the design and performance of this groundbreaking laser and operational aspects of the User Facility.

  20. Power combining of semiconductor lasers: A review

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1982-01-01

    Several methods of coherent power combining are described and compared. A comparison is also made between coherent and incoherent power combining, and important operational characteristics are considered. It is found that in communication links with demanding requirements coherent power combining is necessary.

  1. Skutterudite Compounds For Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre; Caillat, Thierry; Borshchevsky, Alexander; Vandersande, Jan

    1996-01-01

    New semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.

  2. A Thermal and Electrical Analysis of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Vafai, Kambiz

    1997-01-01

    The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

  3. Microchannel heatsinks for high average power laser diode arrays

    SciTech Connect

    Beach, R.; Benett, B.; Freitas, B.; Ciarlo, D.; Sperry, V.; Comaskey, B.; Emanuel, M.; Solarz, R.; Mundinger, D.

    1992-01-01

    Detailed performance results and fabrication techniques for an efficient and low thermal impedance laser diode array heatsink are presented. High duty factor or even CW operation of fully filled laser diode arrays is enabled at high average power. Low thermal impedance is achieved using a liquid coolant and laminar flow through microchannels. The microchannels are fabricated in silicon using a photolithographic pattern definition procedure followed by anisotropic chemical etching. A modular rack-and-stack architecture is adopted for the heatsink design allowing arbitrarily large two-dimensional arrays to be fabricated and easily maintained. The excellent thermal control of the microchannel cooled heatsinks is ideally suited to pump array requirements for high average power crystalline lasers because of the stringent temperature demands that result from coupling the diode light to several nanometers wide absorption features characteristic of leasing ions in crystals.

  4. An Advanced Time Averaging Modelling Technique for Power Electronic Circuits

    NASA Astrophysics Data System (ADS)

    Jankuloski, Goce

    For stable and efficient performance of power converters, a good mathematical model is needed. This thesis presents a new modelling technique for DC/DC and DC/AC Pulse Width Modulated (PWM) converters. The new model is more accurate than the existing modelling techniques such as State Space Averaging (SSA) and Discrete Time Modelling. Unlike the SSA model, the new modelling technique, the Advanced Time Averaging Model (ATAM) includes the averaging dynamics of the converter's output. In addition to offering enhanced model accuracy, application of linearization techniques to the ATAM enables the use of conventional linear control design tools. A controller design application demonstrates that a controller designed based on the ATAM outperforms one designed using the ubiquitous SSA model. Unlike the SSA model, ATAM for DC/AC augments the system's dynamics with the dynamics needed for subcycle fundamental contribution (SFC) calculation. This allows for controller design that is based on an exact model.

  5. Power Efficiency Improvements through Peak-to-Average Power Ratio Reduction and Power Amplifier Linearization

    NASA Astrophysics Data System (ADS)

    Chen, Ning; Zhou, G. Tong; Qian, Hua

    2007-12-01

    Many modern communication signal formats, such as orthogonal frequency-division multiplexing (OFDM) and code-division multiple access (CDMA), have high peak-to-average power ratios (PARs). A signal with a high PAR not only is vulnerable in the presence of nonlinear components such as power amplifiers (PAs), but also leads to low transmission power efficiency. Selected mapping (SLM) and clipping are well-known PAR reduction techniques. We propose to combine SLM with threshold clipping and digital baseband predistortion to improve the overall efficiency of the transmission system. Testbed experiments demonstrate the effectiveness of the proposed approach.

  6. A new FET-bipolar combinational power semiconductor switch

    NASA Technical Reports Server (NTRS)

    Chen, D. Y.; Chandrasekaran, S.; Chin, S. A.

    1984-01-01

    A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.

  7. Strategies for Radiation Hardness Testing of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Soltis, James V. (Technical Monitor); Patton, Martin O.; Harris, Richard D.; Rohal, Robert G.; Blue, Thomas E.; Kauffman, Andrew C.; Frasca, Albert J.

    2005-01-01

    Plans on the drawing board for future space missions call for much larger power systems than have been flown in the past. These systems would employ much higher voltages and currents to enable more powerful electric propulsion engines and other improvements on what will also be much larger spacecraft. Long term human outposts on the moon and planets would also require high voltage, high current and long life power sources. Only hundreds of watts are produced and controlled on a typical robotic exploration spacecraft today. Megawatt systems are required for tomorrow. Semiconductor devices used to control and convert electrical energy in large space power systems will be exposed to electromagnetic and particle radiation of many types, depending on the trajectory and duration of the mission and on the power source. It is necessary to understand the often very different effects of the radiations on the control and conversion systems. Power semiconductor test strategies that we have developed and employed will be presented, along with selected results. The early results that we have obtained in testing large power semiconductor devices give a good indication of the degradation in electrical performance that can be expected in response to a given dose. We are also able to highlight differences in radiation hardness that may be device or material specific.

  8. High power semiconductor laser beam combining technology and its applications

    NASA Astrophysics Data System (ADS)

    Wang, Lijun; Tong, Cunzhu; Peng, Hangyu; Zhang, Jun

    2013-05-01

    With the rapid development of laser applications, single elements of diode lasers are not able to meet the increasing requirements on power and beam quality in the material processing and defense filed, whether are used as pumping sources or directly laser sources. The coupling source with high power and high beam quality, multiplexed by many single elements, has been proven to be a promising technical solution. In this paper, the authors review the development tendency of efficiency, power, and lifetime of laser elements firstly, and then introduce the progress of laser beam combining technology. The authors also present their recent progress on the high power diode laser sources developed by beam combining technology, including the 2600W beam combining direct laser source, 1000W fiber coupled semiconductor lasers and the 1000W continuous wave (CW) semiconductor laser sources with beam quality of 12.5×14[mm. mrad]2.

  9. REVIEW High-power semiconductor separate-confinement double heterostructure lasers

    NASA Astrophysics Data System (ADS)

    Tarasov, I. S.

    2010-10-01

    The review is devoted to high-power semiconductor lasers. Historical reference is presented, physical and technological foundations are considered, and the concept of high-power semiconductor lasers is formulated. Fundamental and technological reasons limiting the optical power of a semiconductor laser are determined. The results of investigations of cw and pulsed high-power semiconductor lasers are presented. Main attention is paid to inspection of the results of experimental studies of single high-power semiconductor lasers. The review is mainly based on the data obtained in the laboratory of semiconductor luminescence and injection emitters at the A.F. Ioffe Physicotechnical Institute.

  10. Optical Parametric Amplification for High Peak and Average Power

    SciTech Connect

    Jovanovic, I

    2001-11-26

    Optical parametric amplification is an established broadband amplification technology based on a second-order nonlinear process of difference-frequency generation (DFG). When used in chirped pulse amplification (CPA), the technology has been termed optical parametric chirped pulse amplification (OPCPA). OPCPA holds a potential for producing unprecedented levels of peak and average power in optical pulses through its scalable ultrashort pulse amplification capability and the absence of quantum defect, respectively. The theory of three-wave parametric interactions is presented, followed by a description of the numerical model developed for nanosecond pulses. Spectral, temperature and angular characteristics of OPCPA are calculated, with an estimate of pulse contrast. An OPCPA system centered at 1054 nm, based on a commercial tabletop Q-switched pump laser, was developed as the front end for a large Nd-glass petawatt-class short-pulse laser. The system does not utilize electro-optic modulators or multi-pass amplification. The obtained overall 6% efficiency is the highest to date in OPCPA that uses a tabletop commercial pump laser. The first compression of pulses amplified in highly nondegenerate OPCPA is reported, with the obtained pulse width of 60 fs. This represents the shortest pulse to date produced in OPCPA. Optical parametric amplification in {beta}-barium borate was combined with laser amplification in Ti:sapphire to produce the first hybrid CPA system, with an overall conversion efficiency of 15%. Hybrid CPA combines the benefits of high gain in OPCPA with high conversion efficiency in Ti:sapphire to allow significant simplification of future tabletop multi-terawatt sources. Preliminary modeling of average power limits in OPCPA and pump laser design are presented, and an approach based on cascaded DFG is proposed to increase the average power beyond the single-crystal limit. Angular and beam quality effects in optical parametric amplification are modeled

  11. Using Bayes Model Averaging for Wind Power Forecasts

    NASA Astrophysics Data System (ADS)

    Preede Revheim, Pål; Beyer, Hans Georg

    2014-05-01

    For operational purposes predictions of the forecasts of the lumped output of groups of wind farms spread over larger geographic areas will often be of interest. A naive approach is to make forecasts for each individual site and sum them up to get the group forecast. It is however well documented that a better choice is to use a model that also takes advantage of spatial smoothing effects. It might however be the case that some sites tends to more accurately reflect the total output of the region, either in general or for certain wind directions. It will then be of interest giving these a greater influence over the group forecast. Bayesian model averaging (BMA) is a statistical post-processing method for producing probabilistic forecasts from ensembles. Raftery et al. [1] show how BMA can be used for statistical post processing of forecast ensembles, producing PDFs of future weather quantities. The BMA predictive PDF of a future weather quantity is a weighted average of the ensemble members' PDFs, where the weights can be interpreted as posterior probabilities and reflect the ensemble members' contribution to overall forecasting skill over a training period. In Revheim and Beyer [2] the BMA procedure used in Sloughter, Gneiting and Raftery [3] were found to produce fairly accurate PDFs for the future mean wind speed of a group of sites from the single sites wind speeds. However, when the procedure was attempted applied to wind power it resulted in either problems with the estimation of the parameters (mainly caused by longer consecutive periods of no power production) or severe underestimation (mainly caused by problems with reflecting the power curve). In this paper the problems that arose when applying BMA to wind power forecasting is met through two strategies. First, the BMA procedure is run with a combination of single site wind speeds and single site wind power production as input. This solves the problem with longer consecutive periods where the input data

  12. Thermal management in high average power pulsed compression systems

    SciTech Connect

    Wavrik, R.W.; Reed, K.W.; Harjes, H.C.; Weber, G.J.; Butler, M.; Penn, K.J.; Neau, E.L.

    1992-08-01

    High average power repetitively pulsed compression systems offer a potential source of electron beams which may be applied to sterilization of wastes, treatment of food products, and other environmental and consumer applications. At Sandia National Laboratory, the Repetitive High Energy Pulsed Power (RHEPP) program is developing a 7 stage magnetic pulse compressor driving a linear induction voltage adder with an electron beam diode load. The RHEPP machine is being design to deliver 350 kW of average power to the diode in 60 ns FWHM, 2.5 MV, 3 kJ pulses at a repetition rate of 120 Hz. In addition to the electrical design considerations, the repetition rate requires thermal management of the electrical losses. Steady state temperatures must be kept below the material degradation temperatures to maximize reliability and component life. The optimum design is a trade off between thermal management, maximizing overall electrical performance of the system, reliability, and cost effectiveness. Cooling requirements and configurations were developed for each of the subsystems of RHEPP. Finite element models that combine fluid flow and heat transfer were used to screen design concepts. The analysis includes one, two, and three dimensional heat transfer using surface heat transfer coefficients and boundary layer models. Experiments were conducted to verify the models as well as to evaluate cooling channel fabrication materials and techniques in Metglas wound cores. 10 refs.

  13. Thermal management in high average power pulsed compression systems

    SciTech Connect

    Wavrik, R.W.; Reed, K.W.; Harjes, H.C.; Weber, G.J.; Butler, M.; Penn, K.J.; Neau, E.L.

    1992-01-01

    High average power repetitively pulsed compression systems offer a potential source of electron beams which may be applied to sterilization of wastes, treatment of food products, and other environmental and consumer applications. At Sandia National Laboratory, the Repetitive High Energy Pulsed Power (RHEPP) program is developing a 7 stage magnetic pulse compressor driving a linear induction voltage adder with an electron beam diode load. The RHEPP machine is being design to deliver 350 kW of average power to the diode in 60 ns FWHM, 2.5 MV, 3 kJ pulses at a repetition rate of 120 Hz. In addition to the electrical design considerations, the repetition rate requires thermal management of the electrical losses. Steady state temperatures must be kept below the material degradation temperatures to maximize reliability and component life. The optimum design is a trade off between thermal management, maximizing overall electrical performance of the system, reliability, and cost effectiveness. Cooling requirements and configurations were developed for each of the subsystems of RHEPP. Finite element models that combine fluid flow and heat transfer were used to screen design concepts. The analysis includes one, two, and three dimensional heat transfer using surface heat transfer coefficients and boundary layer models. Experiments were conducted to verify the models as well as to evaluate cooling channel fabrication materials and techniques in Metglas wound cores. 10 refs.

  14. 100 W average power femtosecond laser at 343 nm.

    PubMed

    Rothhardt, Jan; Rothhardt, Carolin; Müller, Michael; Klenke, Arno; Kienel, Marco; Demmler, Stefan; Elsmann, Tino; Rothhardt, Manfred; Limpert, Jens; Tünnermann, Andreas

    2016-04-15

    We present a femtosecond laser system delivering up to 100 W of average power at 343 nm. The laser system employs a Yb-based femtosecond fiber laser and subsequent second- and third-harmonic generation in beta barium borate (BBO) crystals. Thermal gradients within these BBO crystals are mitigated by sapphire heat spreaders directly bonded to the front and back surface of the crystals. Thus, a nearly diffraction-limited beam quality (M2 < 1.4) is achieved, despite the high thermal load to the nonlinear crystals. This laser source is expected to push many industrial and scientific applications in the future. PMID:27082370

  15. Highly flexible ultrafast laser system with 260W average power

    NASA Astrophysics Data System (ADS)

    Mans, Tl; Dolkemeyer, Jan; Russbüldt, P.; Schnitzler, Claus

    2011-02-01

    A flexible ultrafast laser amplifier system based on Ytterbium Innoslab technology with an average power exceeding 200W is presented. The pulse duration of the system can be continuously tuned between 500fs and 6ps, limited only by the amplification bandwidth of Yb:YAG and the stretcher of the seed source. The repetition rate can be varied from 26.6MHz down to 1MHz. For the ps-regime more than 200μJ and for the fs-regime more than 50μJ are demonstrated without the need of temporal compression of the high power beam after the amplifier. Spectral bandwidth is close to the transform limit of the shortest measured pulses. Beam quality is measured to be near the diffraction limit (M2<1.3).

  16. A high-average-power FEL for industrial applications

    SciTech Connect

    Dylla, H.F.; Benson, S.; Bisognano, J.

    1995-12-31

    CEBAF has developed a comprehensive conceptual design of an industrial user facility based on a kilowatt UV (150-1000 nm) and IR (2-25 micron) FEL driven by a recirculating, energy-recovering 200 MeV superconducting radio-frequency (SRF) accelerator. FEL users{endash}CEBAF`s partners in the Laser Processing Consortium, including AT&T, DuPont, IBM, Northrop-Grumman, 3M, and Xerox{endash}plan to develop applications such as polymer surface processing, metals and ceramics micromachining, and metal surface processing, with the overall effort leading to later scale-up to industrial systems at 50-100 kW. Representative applications are described. The proposed high-average-power FEL overcomes limitations of conventional laser sources in available power, cost-effectiveness, tunability and pulse structure. 4 refs., 3 figs., 2 tabs.

  17. Potential of high-average-power solid state lasers

    SciTech Connect

    Emmett, J.L.; Krupke, W.F.; Sooy, W.R.

    1984-09-25

    We discuss the possibility of extending solid state laser technology to high average power and of improving the efficiency of such lasers sufficiently to make them reasonable candidates for a number of demanding applications. A variety of new design concepts, materials, and techniques have emerged over the past decade that, collectively, suggest that the traditional technical limitations on power (a few hundred watts or less) and efficiency (less than 1%) can be removed. The core idea is configuring the laser medium in relatively thin, large-area plates, rather than using the traditional low-aspect-ratio rods or blocks. This presents a large surface area for cooling, and assures that deposited heat is relatively close to a cooled surface. It also minimizes the laser volume distorted by edge effects. The feasibility of such configurations is supported by recent developments in materials, fabrication processes, and optical pumps. Two types of lasers can, in principle, utilize this sheet-like gain configuration in such a way that phase and gain profiles are uniformly sampled and, to first order, yield high-quality (undistorted) beams. The zig-zag laser does this with a single plate, and should be capable of power levels up to several kilowatts. The disk laser is designed around a large number of plates, and should be capable of scaling to arbitrarily high power levels.

  18. The development of a high average power glass laser source

    NASA Astrophysics Data System (ADS)

    Myers, J. D.

    1984-05-01

    The subject contract has as its objective the development of a high average power glass laser by systematically improving the factors which influence the ability of a laser glass to handle large power levels. Based upon the availability of the thermal laser glass composition Q-100, the rationale used was toward the improvement of the efficiency of a glass laser by developing methods to increase the pumping efficiency and toward the improvement of the power handling capability of the glass laser rod itself. These incremental developments were broken down as follows: (1) Characterization of Q-100 Laser Glass: The measurement of its thermo-physical and thermo-optical properties to better define its engineering design parameters. (2) Improve Pumping Efficiency or Q-100: Primarily by cladding Q-100 with a matching cladding glass which would act as a lens and improve the transfer of pumping energy from the flashlamp. (3) Reduce thermal loading of Q-100 by Selective filtering of the flashlamp radiation and/or use energy transfer schemes to increase that portion of the flashlamp radiation corresponding to the neodymium pump bands. (4) Increase the rupture strength of Q-100 to directly increase its power-handling capability. (5) Investigate alternate pump sources to improve efficiency.

  19. A high average power electro-optic switch using KTP

    SciTech Connect

    Ebbers, C.A.; Cook, W.M.; Velsko, S.P.

    1994-04-01

    High damage threshold, high thermal conductivity, and small thermo-optic coefficients make KTiOPO{sub 4} (KTP) an attractive material for use in a high average power Q-switch. However, electro-chromic damage and refractive index homogeneity have prevented the utilization of KTP in such a device in the past. This work shows that electro-chromic damage is effectively suppressed using capacitive coupling, and a KTP crystal can be Q-switched for 1.5 {times} 10{sup 9} shots without any detectable electro-chromic damage. In addition, KTP with the high uniformity and large aperture size needed for a KTP electro-optic Q-switch can be obtained from flux crystals grown at constant temperature. A thermally compensated, dual crystal KTP Q-switch, which successfully produced 50 mJ pulses with a pulse width of 8 ns (FWHM), has been constructed. In addition, in off-line testing the Q-switch showed less than 7% depolarization at an average power loading of 3.2 kW/cm{sup 2}.

  20. Ultrafast green laser exceeding 400 W of average power

    NASA Astrophysics Data System (ADS)

    Gronloh, Bastian; Russbueldt, Peter; Jungbluth, Bernd; Hoffmann, Hans-Dieter

    2014-05-01

    We present the world's first laser at 515 nm with sub-picosecond pulses and an average power of 445 W. To realize this beam source we utilize an Yb:YAG-based infrared laser consisting of a fiber MOPA system as a seed source, a rod-type pre-amplifier and two Innoslab power amplifier stages. The infrared system delivers up to 930 W of average power at repetition rates between 10 and 50 MHz and with pulse durations around 800 fs. The beam quality in the infrared is M2 = 1.1 and 1.5 in fast and slow axis. As a frequency doubler we chose a Type-I critically phase-matched Lithium Triborate (LBO) crystal in a single-pass configuration. To preserve the infrared beam quality and pulse duration, the conversion was carefully modeled using numerical calculations. These take dispersion-related and thermal effects into account, thus enabling us to provide precise predictions of the properties of the frequency-doubled beam. To be able to model the influence of thermal dephasing correctly and to choose appropriate crystals accordingly, we performed extensive absorption measurements of all crystals used for conversion experiments. These measurements provide the input data for the thermal FEM analysis and calculation. We used a Photothermal Commonpath Interferometer (PCI) to obtain space-resolved absorption data in the bulk and at the surfaces of the LBO crystals. The absorption was measured at 1030 nm as well as at 515 nm in order to take into account the different absorption behavior at both occurring wavelengths.

  1. Deep impurity trapping concepts for power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1982-01-01

    High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.

  2. Cosmic Ray Ruggedness of Power Semiconductor Devices for Hybrid Vehicles

    NASA Astrophysics Data System (ADS)

    Nishida, Shuichi; Shoji, Tomoyuki; Ohnishi, Toyokazu; Fujikawa, Touma; Nose, Noboru; Ishiko, Masayasu; Hamada, Kimimori

    Power semiconductors that are used under high voltage conditions in hybrid vehicles (HVs) are required to have a high destruction tolerance against cosmic rays as well as to meet conventional quality standards. In this paper, the failure mechanism for single event burnouts (SEB) induced by cosmic rays in insulated gate bipolar transistors (IGBTs) was investigated. Device destruction tolerance can be greatly improved by adopting an optimized device design that greatly suppresses parasitic thyristor action.

  3. A structurally-controllable spin filter in a δ-doped magnetically modulated semiconductor nanostructure with zero average magnetic field

    NASA Astrophysics Data System (ADS)

    Shen, Li-Hua; Ma, Wen-Yue; Zhang, Gui-Lian; Yang, Shi-Peng

    2015-07-01

    We report on a theoretical investigation of spin-polarized transport in a δ-doped magnetically modulated semiconductor nanostructure, which can be experimentally realized by depositing a ferromagnetic stripe on the top of a semiconductor heterostructure and by using the atomic layer doping technique such as molecular beam epitaxy (MBE). It is shown that although such a nanostructure has a zero average magnetic filed, a sizable spin polarization exists due to the Zeeman splitting mechanism. It is also shown that the degree of spin polarization varies sensitively with the weight and/or position of the δ-doping. Therefore, one can conveniently tailor the behaviour of the spin-polarized electron by tuning the δ -doping, and such a device can be employed as a controllable spin filter for spintronics.

  4. High Average Power Nd:YAG Slab Laser

    NASA Astrophysics Data System (ADS)

    Kasai, Takeshi; Sindo, Yoshihiko; Haga, Keiji

    1989-07-01

    A slab geometry Nd:YAG laser with a zigzag optical path is described. The dimensions of the Nd:YAG slab are 5.6 x 18.4 x 153.9 mm, and Nei' ion concentration is 1.1 at.%. Two krypton flashlamps, one located on each side of the YAG slab, are used for pumping. The conditions for normal pulsed operation were as follows: the repetition rate was from 5 to 27 pps, and the pulse durations were 4 and 9.9 ms. With the above conditions, a maximum average output power of 500 W was obtained with an efficiency of 2 %, the slope efficiency being 2.4 %. The beam divergence was estimated to be 10x25 mrad. The stability of the laser output power was about +/-1.5 %. Another oscillator that includes intra-cavity cylindrical lenses, was also designed. Using this resonator configuration reduced the beam divergence to about 7.6 x8.2 mrad. The preliminary laser processing experiment was attemped using this laser oscillator.

  5. An automatic step adjustment method for average power analysis technique used in fiber amplifiers

    NASA Astrophysics Data System (ADS)

    Liu, Xue-Ming

    2006-04-01

    An automatic step adjustment (ASA) method for average power analysis (APA) technique used in fiber amplifiers is proposed in this paper for the first time. In comparison with the traditional APA technique, the proposed method has suggested two unique merits such as a higher order accuracy and an ASA mechanism, so that it can significantly shorten the computing time and improve the solution accuracy. A test example demonstrates that, by comparing to the APA technique, the proposed method increases the computing speed by more than a hundredfold under the same errors. By computing the model equations of erbium-doped fiber amplifiers, the numerical results show that our method can improve the solution accuracy by over two orders of magnitude at the same amplifying section number. The proposed method has the capacity to rapidly and effectively compute the model equations of fiber Raman amplifiers and semiconductor lasers.

  6. Power scaling of semiconductor laser pumped Praseodymium-lasers

    NASA Astrophysics Data System (ADS)

    Richter, A.; Heumann, E.; Huber, G.; Ostroumov, V.; Seelert, W.

    2007-04-01

    We report on efficient lasing of Pr-doped fluoride materials with cw output powers up to 600 mW in the visible spectral range. Praseodymium doped LiYF4 and LiLuF4 crystals were pumped either by an intracavity frequency doubled optically pumped semiconductor laser with output powers up to 1.6 W and nearly diffraction limited beam quality or by a multimode GaN-laser diode with an output power of about 370 mW. Furthermore, intracavity frequency doubling of the red Pr-laser radiation to 320 nm reaching output powers of more than 360 mW with a conversion efficiency of 61% and an optical-to-optical efficiency of 22% are presented.

  7. Metal deep engraving with high average power femtosecond lasers

    NASA Astrophysics Data System (ADS)

    Faucon, M.; Mincuzzi, G.; Morin, F.; Hönninger, C.; Mottay, E.; Kling, R.

    2015-03-01

    Deep engraving of 3D textures is a very demanding process for the creation of master tool e. g molds, forming tools or coining dies. As these masters are uses for reproduction of 3D patterns the materials for the tools are typically hard and brittle and thus difficult to machine. The new generation of industrial femtosecond lasers provides both high accuracy engraving results and high ablation rates at the same time. Operation at pulse energies of typically 40 μJ and repetition rates in the Mhz range the detrimental effect of heat accumulation has to be avoided. Therefore high scanning speeds are required to reduce the pulse overlap below 90%. As a consequence scan speeds in the range of 25-50 m/s a needed, which is beyond the capability of galvo scanners. In this paper we present results using a combination of a polygon scanner with a high average power femtosecond laser and compare this to results with conventional scanners. The effects of pulse energy and scan speed of the head on geometrical accuracy are discussed. The quality of the obtained structures is analyzed by means of 3D surface metrology microscope as well as SEM images.

  8. LNG combined cycle power plant for stable power supply for Kiheung semiconductor plant

    SciTech Connect

    Chang, Choong Koo; Park, Hyo Jeong; Kim, In Chool

    1995-12-31

    Reserve margins of Korea Electric Power Corporation (KEPCO) was 12% in 1993, however it was reduced to less than 3% in the summer of 1994 due to increase of electric power consumption caused by life style change based on economic growth. Therefore stable supply of electric power to industrial plant was threatened during last summer`s peak. The process of semiconductor manufacturing is very precious and full processing time reaches several months. Furthermore interruption of power supply to the process causes abortion of every product in the process. Therefore, power failure of less than one (1) second, may result in enormous loss of capital. In order to protect disaster caused by power shortage during summer peaks. Samsung Electronics Co., Ltd (SEC) planned to construct LNG combined cycle power plant for the Klheung semiconductor plant which is the world`s leading maker of dynamic random access memory (DRAM) chips.

  9. Thermoelectric Power and ZT in Conducting Organic Semiconductor

    NASA Astrophysics Data System (ADS)

    Kwok, H. L.

    2012-03-01

    A recent report on poly(3,4-ethylenedioxythiophene-tosylate) (PEDOT.Tos) suggested that the thermoelectric figure of merit ( ZT) could be enhanced when the percentage oxidation was chemically altered. This invokes the question of whether the carrier density or the mobility was modified. In this work, we analyzed data reported by Bibnova et al. ( Nat. Mater. 10, 429, 2011) and extracted the transport parameters using three-dimensional (3D) and two-dimensional (2D) models. Our results indicate that the increase in the power factor ( S 2 σ) was due primarily to upward extension in the range of thermoelectric power. A changeover from lattice scattering to ionized impurity scattering in PEDOT.Tos allowed the equation governing the thermoelectric power to be valid at higher carrier densities, resulting in an increase in the power factor. ZT was also enhanced in PEDOT.Tos due to the low intrinsic thermal conductivity (~0.37 W/m K). The peak value of ZT (~0.3) was found close to the regime where the semiconductor turned "metallic," beyond which ZT would decrease. We are of the opinion that charge-to-charge scattering (which normally would lower the power factor in highly doped semiconductors) remain subdued in PEDOT.Tos due potentially to electronic screening and a lack of long-range order. We used the reported data to compute the carrier density and mobility assuming ionized impurity scattering and found the peak power factor to occur for carrier density of ~1 × 1026 m-3 and mobility of ~5 × 10-4 m2/V s.

  10. Noise power spectral density of a fibre scattered-light interferometer with a semiconductor laser source

    SciTech Connect

    Alekseev, A E; Potapov, V T

    2013-10-31

    Spectral characteristics of the noise intensity fluctuations at the output of a scattered-light interferometer, caused by phase fluctuations of semiconductor laser radiation are considered. This kind of noise is one of the main factors limiting sensitivity of interferometric sensors. For the first time, to our knowledge, the expression is obtained for the average noise power spectral density at the interferometer output versus the degree of a light source coherence and length of the scattering segment. Also, the approximate expressions are considered which determine the power spectral density in the low-frequency range (up to 200 kHz) and in the limiting case of extended scattering segments. The expression obtained for the noise power spectral density agrees with experimental normalised power spectra with a high accuracy. (interferometry of radiation)

  11. High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

    NASA Technical Reports Server (NTRS)

    Elmes, John

    2015-01-01

    Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

  12. Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Hung, Nguyen T.; Hasdeo, Eddwi H.; Nugraha, Ahmad R. T.; Dresselhaus, Mildred S.; Saito, Riichiro

    2016-07-01

    We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ , bulk semiconductors may give a higher power factor compared to the lower dimensional ones.

  13. Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.

    PubMed

    Hung, Nguyen T; Hasdeo, Eddwi H; Nugraha, Ahmad R T; Dresselhaus, Mildred S; Saito, Riichiro

    2016-07-15

    We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones. PMID:27472126

  14. High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror

    NASA Astrophysics Data System (ADS)

    Rantamäki, A.; Saarinen, E. J.; Lyytikäinen, J.; Lahtonen, K.; Valden, M.; Okhotnikov, O. G.

    2014-03-01

    We present optically pumped semiconductor disk lasers with a thin dielectric layer placed between the semiconductor distributed Bragg reflector and the metallization interface. The approach is shown to enhance the reflectivity of the semiconductor mirror while introducing a negligible penalty to the thermal resistance of the device. The design has potential for improving the performance of semiconductor disk lasers by avoiding highly pump-absorbing metal layers and allowing thinner mirror structures. The advantages are expected to be especially prominent for material systems that employ thick thermally insulating semiconductor mirrors.

  15. More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging

    SciTech Connect

    2010-02-01

    Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

  16. High Average Power Lasers for the Photon Collider

    SciTech Connect

    Stuart, B; Gronberg, J; Seryi, A

    2009-04-29

    The idea to convert an electron collider into a high energy photon collider has existed for several decades. A key technological limitation to realizing this idea is the need to create a large amount of laser power to drive the Compton back-scattering. A concept to reduce the required laser power using a recirculating cavity has been proposed. We describe a concept for a laser architecture that could drive such a cavity.

  17. Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

    NASA Astrophysics Data System (ADS)

    Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

    2016-03-01

    Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

  18. Power-scalable 1.57 microm mode-locked semiconductor disk laser using wafer fusion.

    PubMed

    Saarinen, Esa J; Puustinen, Janne; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

    2009-10-15

    We report the first (to our knowledge) wafer-fused high-power passively mode-locked semiconductor disk laser operating at 1.57 microm wavelength. An InP-based active medium was fused with GaAs/AlGaAs distributed Bragg reflector on a 2 inch wafer level, resulting in an integrated monolithic gain mirror. An intracavity wedged diamond heat-spreader capillary bonded to the gain chip provides efficient heat removal from the gain structure without disturbing the spectrum of the mode-locked laser. The laser produces over 0.6 W of average output power at 15 degrees C with 16 ps pulse width. The total output power accounting for all output beams emerging from the cavity was 0.86 W. The results reveal an essential advantage of wafer fusion processing of disparate materials over monolithically grown InP-based gain structures and demonstrate the high potential of this technique for power scaling of long-wavelength semiconductor disk lasers. PMID:19838252

  19. Modeling and simulation of bulk gallium nitride power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Sabui, G.; Parbrook, P. J.; Arredondo-Arechavala, M.; Shen, Z. J.

    2016-05-01

    Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.

  20. High average power magnetic modulator for metal vapor lasers

    DOEpatents

    Ball, Don G.; Birx, Daniel L.; Cook, Edward G.; Miller, John L.

    1994-01-01

    A three-stage magnetic modulator utilizing magnetic pulse compression designed to provide a 60 kV pulse to a copper vapor laser at a 4.5 kHz repetition rate is disclosed. This modulator operates at 34 kW input power. The circuit includes a step up auto transformer and utilizes a rod and plate stack construction technique to achieve a high packing factor.

  1. A Methodology for Measuring Strain in Power Semiconductors

    NASA Astrophysics Data System (ADS)

    Avery, Seth M.

    The objective of this work is to develop a strain measurement methodology for use in power electronics during electrical operation; such that strain models can be developed and used as the basis of an active strain controller---improving the reliability of power electronics modules. This research involves developing electronic speckle pattern interferometry (ESPI) into a technology capable of measuring thermal-mechanical strain in electrically active power semiconductors. ESPI is a non-contact optical technique capable of high resolution (approx. 10 nm) surface displacement measurements. This work has developed a 3-D ESPI test stand, where simultaneous in- and out-of-plane measured components are combined to accurately determine full-field surface displacement. Two cameras are used to capture both local (interconnect level) displacements and strains, and global (device level) displacements. Methods have been developed to enable strain measurements of larger loads, while avoiding speckle decorrelation (which limits ESPI measurement of large deformations). A method of extracting strain estimates directly from unfiltered and wrapped phase maps has been developed, simplifying data analysis. Experimental noise measurements are made and used to develop optimal filtering using model-based tracking and determined strain noise characteristics. The experimental results of this work are strain measurements made on the surface of a leadframe of an electrically active IGBT. A model-based tracking technique has been developed to allow for the optimal strain solution to be extracted from noisy displacement results. Also, an experimentally validated thermal-mechanical FE strain model has been developed. The results of this work demonstrate that in situ strain measurements in power devices are feasible. Using the procedures developed in the work, strain measurements at critical locations of strain, which limit device reliability, at relevant power levels can be completed.

  2. Development of High Average Power Lasers for the Photon Collider

    SciTech Connect

    Gronberg, Jeff; Stuart, Brent; Seryi, Andrei; /SLAC

    2012-07-05

    The laser and optics system for the photon collider seeks to minimize the required laser power by using an optical stacking cavity to recirculate the laser light. An enhancement of between 300 to 400 is desired. In order to achieve this the laser pulses which drive the cavity must precisely match the phase of the pulse circulating within the cavity. We report on simulations of the performance of a stacking cavity to various variations of the drive laser in order to specify the required tolerances of the laser system.

  3. Borogermanate glasses for Faraday isolators at high average power

    NASA Astrophysics Data System (ADS)

    Starobor, A. V.; Zheleznov, D. S.; Palashov, O. V.; Savinkov, V. I.; Sigaev, V. N.

    2016-01-01

    The temperature dependence of Verdet constant and thermo-optical characteristics of a new magneto-optical borogermanate glass has been investigated. The performed analysis confirmed a possibility of developing a Faraday isolator and a cryogenic Faraday isolator based on the studied medium, providing a 25 dB isolation ratio of laser radiation in the "eye-safe" wavelength range (1530-1620 nm) at the power of 0.4 kW and 1.3 kW, respectively, which is a leading-edge result for magneto-optical glasses.

  4. Optimizing average power in low quantum defect lasers.

    PubMed

    Bowman, S R

    2015-11-01

    Waste heat generation is a generic problem in high-power solid-state laser systems. One way to reduce heat loading while improving efficiency is to reduce the laser's quantum defect. This paper presents a simple analysis of low quantum defect laser materials. In these laser materials, the effects of fluorescent cooling and weak loss processes should not be ignored. Simple expressions are developed for efficiency and heating in a steady-state purely radiative material. These expressions are then extended to include weak losses and fluorescence reabsorption. Evaluation of these relations using ytterbium-doped YAG is used to illustrate several optimization schemes and the impact of realistic losses. PMID:26560625

  5. Energy stability in a high average power FEL

    SciTech Connect

    Mermings, L.; Bisognano, J.; Delayen, J.

    1995-12-31

    Recirculating, energy-recovering linacs can be used as driver accelerators for high power FELs. Instabilities which arise from fluctuations of the cavity fields or beam current are investigated. Energy changes can cause beam loss on apertures, or, when coupled to M, phase oscillations. Both effects change the beam induced voltage in the cavities and can lead to unstable variations of the accelerating field. Stability analysis for small perturbations from equilibrium is performed and threshold currents are determined. Furthermore, the analytical model is extended to include feedback. Comparison with simulation results derived from direct integration of the equations of motion is presented. Design strategies to increase the instability threshold are discussed and the UV Demo FEL, proposed for construction at CEBAF, and the INP Recuperatron at Novosibirsk are used as examples.

  6. Development of High Average Power Lasers for the Photon Collider

    SciTech Connect

    Gronberg, J; Stuart, B; Seryi, A

    2010-05-17

    The laser and optics system for the photon collider seeks to minimize the required laser power by using an optical stacking cavity to recirculate the laser light. An enhancement of between 300 to 400 is desired. In order to achieve this the laser pulses which drive the cavity must precisely match the phase of the pulse circulating within the cavity. We report on simulations of the performance of a stacking cavity to various variations of the drive laser in order to specify the required tolerances of the laser system. We look at the behavior of a simple four mirror cavity as shown in Fig. 1. As a unit input pulse is applied to the coupling mirror a pulse begins to build up in the interior of the cavity. If the drive pulses and the interior pulse arrive at the coupling mirror in phase the interior pulse will build up to a larger value. The achievable enhancement is a strong function of the reflectivity of the cavities. The best performance if attained when the reflectivities of the input coupler is matched to the internal reflectivities of the cavity. In Fig. 2 we show the build up of the internal pulse after a certain number of drive pulses, assuming the input coupler has a reflectivity of 0.996 and the interior mirrors have 0.998 reflectivity. With these parameters the cavity will reach an enhancement factor of 450. Reducing the coupler reflectivity gives a faster cavity loading rate but with a reduced enhancement of the internal pulse. The enhancement as a function of coupler reflectivity and total internal cavity reflectivity is shown in Fig. 3. The best enhancement is achieved when the coupling mirror is matched to the reflectivity of the cavity. A coupler reflectivity just below the internal cavity reflectivity minimizes the required laser power.

  7. Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser.

    PubMed

    Goldberg, L; Kliner, D A

    1995-05-15

    Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO(3) crystal generated the 430-nm second harmonic, which was doubled by a beta-BaB(2)O(4) crystal, producing tunable UV radiation with as much as 15 microW of average power. PMID:19859453

  8. Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser

    SciTech Connect

    Goldberg, L.; Kliner, D.A.V.

    1995-05-15

    Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO{sub 3} crystal generated the 430-nm second harmonic, which was doubled by a {beta}-BaB{sub 2}O{sub 4} crystal, producing tunable UV radiation with as much as 15 {mu}W of average power.

  9. Method and system for powering and cooling semiconductor lasers

    SciTech Connect

    Telford, Steven J; Ladran, Anthony S

    2014-02-25

    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  10. Application of copper-carbon fiber composites to power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Kuniya, Keiichi; Arakawa, Hideo; Sakaue, Tadashi; Minorikawa, Hitoshi; Akeyama, Kenji; Sakamoto, Tatsuji

    1988-01-01

    Copper-carbon composite electrodes are used in a series of power semiconductor devices, i.e., resin molded diodes, button-type diodes, stud-type diodes, power modules, and integrated circuit igniter modules. The properties of these power semiconductor devices compare favorably with those conventional devices using Mo or W electrodes. In thermal fatigue tests, no degradation in the electrical and mechanical characteristics of these devices are observed. The new composite electrode with carbon fibers satisfies all of the major requirements for the electrodes in power semiconductor devices.

  11. High average power lasers for future particle accelerators

    NASA Astrophysics Data System (ADS)

    Dawson, Jay W.; Crane, John K.; Messerly, Michael J.; Prantil, Matthew A.; Pax, Paul H.; Sridharan, Arun K.; Allen, Graham S.; Drachenberg, Derrek R.; Phan, Henry H.; Heebner, John E.; Ebbers, Christopher A.; Beach, Raymond J.; Hartouni, Edward P.; Siders, Craig W.; Spinka, Thomas M.; Barty, C. P. J.; Bayramian, Andrew J.; Haefner, Leon C.; Albert, Felicie; Lowdermilk, W. Howard; Rubenchik, Alexander M.; Bonanno, Regina E.

    2012-12-01

    Lasers are of increasing interest to the accelerator community and include applications as diverse as stripping electrons from hydrogen atoms, sources for Compton scattering, efficient high repetition rate lasers for dielectric laser acceleration, peta-watt peak power lasers for laser wake field and high energy, short pulse lasers for proton and ion beam therapy. The laser requirements for these applications are briefly surveyed. State of the art of laser technologies with the potential to eventually meet those requirements are reviewed. These technologies include diode pumped solid state lasers (including cryogenic), fiber lasers, OPCPA based lasers and Ti:Sapphire lasers. Strengths and weakness of the various technologies are discussed along with the most important issues to address to get from the current state of the art to the performance needed for the accelerator applications. Efficiency issues are considered in detail as in most cases the system efficiency is a valuable indicator of the actual ability of a given technology to deliver the application requirements.

  12. Scalability of components for kW-level average power few-cycle lasers.

    PubMed

    Hädrich, Steffen; Rothhardt, Jan; Demmler, Stefan; Tschernajew, Maxim; Hoffmann, Armin; Krebs, Manuel; Liem, Andreas; de Vries, Oliver; Plötner, Marco; Fabian, Simone; Schreiber, Thomas; Limpert, Jens; Tünnermann, Andreas

    2016-03-01

    In this paper, the average power scalability of components that can be used for intense few-cycle lasers based on nonlinear compression of modern femtosecond solid-state lasers is investigated. The key components of such a setup, namely, the gas-filled waveguides, laser windows, chirped mirrors for pulse compression and low dispersion mirrors for beam collimation, focusing, and beam steering are tested under high-average-power operation using a kilowatt cw laser. We demonstrate the long-term stable transmission of kW-level average power through a hollow capillary and a Kagome-type photonic crystal fiber. In addition, we show that sapphire substrates significantly improve the average power capability of metal-coated mirrors. Ultimately, ultrabroadband dielectric mirrors show negligible heating up to 1 kW of average power. In summary, a technology for scaling of few-cycle lasers up to 1 kW of average power and beyond is presented. PMID:26974623

  13. Improved low-power semiconductor diode lasers for photodynamic therapy in veterinary medicine

    NASA Astrophysics Data System (ADS)

    Lee, Susanne M.; Mueller, Eduard K.; Van de Workeen, Brian C.; Mueller, Otward M.

    2001-05-01

    Cryogenically cooling semiconductor diode lasers provides higher power output, longer device lifetime, and greater monochromaticity. While these effects are well known, such improvements have not been quantified, and thus cryogenically operated semiconductor lasers have not been utilized in photodynamic therapy (PDT). We report quantification of these results from laser power meter and photospectrometer data. The emission wavelengths of these low power multiple quantum well semiconductor lasers were found to decrease and become more monochromatic with decreasing temperature. Significant power output improvements also were obtained at cryogenic temperatures. In addition, the threshold current, i.e. the current at which lasing begins, decreased with decreasing temperature. This lower threshold current combined with the increased power output produced dramatically higher device efficiencies. It is proposed that cryogenic operation of semiconductor diode lasers will reduce the number of devices needed to produce the requisite output for many veterinary and medical applications, permitting significant cost reductions.

  14. Thermoelectric power of small polarons in magnetic semiconductors

    SciTech Connect

    Liu, N.H.; Emin, D.

    1984-09-15

    The thermoelectric power (Seebeck coefficient) ..cap alpha.. of a small polaron in both ferromagnetic and antiferromagnetic semiconductors and insulators is calculated for the first time. In particular, we obtain the contribution to the Seebeck coefficient arising from exchange interactions between the severely localized carrier (i.e., small polaron) of charge q and the spins of the host lattice. In essence, we study the heat transported along with a carrier. This heat, the Peltier heat, Pi, is related to the Seebeck coefficient by the Kelvin relation: Pi = qT..cap alpha.., where T is the temperature. The heat per carrier is simply the product of the temperature and the change of the entropy of the system when a small polaron is added to it. The magnetic contribution to the Seebeck coefficient is therefore directly related to the change of the magnetic entropy of the system upon introduction of a charge carrier. We explicitly treat the intrasite and intersite exchange interactions between a small polaron and the spins of a spin-1/2 system. These magnetic interactions produce two competing contributions to the Seebeck coefficient. First, adding the carrier tends to provide extra spin freedom (e.g., spin up or spin down of the carrier). This effect augments the entropy of the system, thereby producing a positive contribution to the Peltier heat. Second, however, the additional exchange between the carrier and the sites about it enhances the exchange binding among these sites. This generally reduces the energetically allowable spin configurations. The concomitant reduction of the system's entropy provides a negative contribution to the Peltier heat. At the highest of temperatures, when kT exceeds the intrasite exchange energy, the first effect dominates. Then, the Peltier heat is simply augmented by kT ln2.

  15. Demonstration of a 10 kW average power 94 GHz gyroklystron amplifier

    NASA Astrophysics Data System (ADS)

    Blank, M.; Danly, B. G.; Levush, B.; Calame, J. P.; Nguyen, K.; Pershing, D.; Petillo, J.; Hargreaves, T. A.; True, R. B.; Theiss, A. J.; Good, G. R.; Felch, K.; James, B. G.; Borchard, P.; Cahalan, P.; Chu, T. S.; Jory, H.; Lawson, W. G.; Antonsen, T. M.

    1999-12-01

    The experimental demonstration of a high average power W-band (75-110 GHz) gyroklystron amplifier is reported. The gyroklystron has produced 118 AW peak output power and 29.5% electronic efficiency in the TE011 mode using a 66.7 kV, 6 A electron beam at 0.2% rf duty factor. At this operating point, the instantaneous full width at half-maximum (FWHM) bandwidth is 600 MHz. At 11% rf duty factor, the gyroklystron has produced up to 10.1 kW average power at 33% electronic efficiency with a 66 kV, 4.15 A electron beam. This represents world record performance for an amplifier at this frequency. At the 10.1 kW average power operating point, the FWHM bandwidth is 420 MHz. At higher magnetic fields and lower beam voltages, larger bandwidths can be achieved at the expense of peak and average output power.

  16. An optically-triggered semiconductor switch for high power laser beams

    SciTech Connect

    Chow, Weng W.; Warren, M.E.

    1995-04-01

    The work involves research leading to an optically triggered switch for a high power laser pulse. The switch uses a semiconductor heterostructure whose optical properties are modified by a low power laser trigger such as a laser diode. Potential applications include optical control of pulsed power systems, control of medical lasers and implementation of security features in optical warhead architectures.

  17. Accurate analytical modelling of cosmic ray induced failure rates of power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Bauer, Friedhelm D.

    2009-06-01

    A new, simple and efficient approach is presented to conduct estimations of the cosmic ray induced failure rate for high voltage silicon power devices early in the design phase. This allows combining common design issues such as device losses and safe operating area with the constraints imposed by the reliability to result in a better and overall more efficient design methodology. Starting from an experimental and theoretical background brought forth a few yeas ago [Kabza H et al. Cosmic radiation as a cause for power device failure and possible countermeasures. In: Proceedings of the sixth international symposium on power semiconductor devices and IC's, Davos, Switzerland; 1994. p. 9-12, Zeller HR. Cosmic ray induced breakdown in high voltage semiconductor devices, microscopic model and possible countermeasures. In: Proceedings of the sixth international symposium on power semiconductor devices and IC's, Davos, Switzerland; 1994. p. 339-40, and Matsuda H et al. Analysis of GTO failure mode during d.c. blocking. In: Proceedings of the sixth international symposium on power semiconductor devices and IC's, Davos, Switzerland; 1994. p. 221-5], an exact solution of the failure rate integral is derived and presented in a form which lends itself to be combined with the results available from commercial semiconductor simulation tools. Hence, failure rate integrals can be obtained with relative ease for realistic two- and even three-dimensional semiconductor geometries. Two case studies relating to IGBT cell design and planar junction termination layout demonstrate the purpose of the method.

  18. Far field and wavefront characterization of a high-power semiconductor laser for free space optical communications

    NASA Technical Reports Server (NTRS)

    Cornwell, Donald M., Jr.; Saif, Babak N.

    1991-01-01

    The spatial pointing angle and far field beamwidth of a high-power semiconductor laser are characterized as a function of CW power and also as a function of temperature. The time-averaged spatial pointing angle and spatial lobe width were measured under intensity-modulated conditions. The measured pointing deviations are determined to be well within the pointing requirements of the NASA Laser Communications Transceiver (LCT) program. A computer-controlled Mach-Zehnder phase-shifter interferometer is used to characterize the wavefront quality of the laser. The rms phase error over the entire pupil was measured as a function of CW output power. Time-averaged measurements of the wavefront quality are also made under intensity-modulated conditions. The measured rms phase errors are determined to be well within the wavefront quality requirements of the LCT program.

  19. Analytical expressions for maximum wind turbine average power in a Rayleigh wind regime

    SciTech Connect

    Carlin, P.W.

    1996-12-01

    Average or expectation values for annual power of a wind turbine in a Rayleigh wind regime are calculated and plotted as a function of cut-out wind speed. This wind speed is expressed in multiples of the annual average wind speed at the turbine installation site. To provide a common basis for comparison of all real and imagined turbines, the Rayleigh-Betz wind machine is postulated. This machine is an ideal wind machine operating with the ideal Betz power coefficient of 0.593 in a Rayleigh probability wind regime. All other average annual powers are expressed in fractions of that power. Cases considered include: (1) an ideal machine with finite power and finite cutout speed, (2) real machines operating in variable speed mode at their maximum power coefficient, and (3) real machines operating at constant speed.

  20. Estimation of average annual streamflows and power potentials for Alaska and Hawaii

    SciTech Connect

    Verdin, Kristine L.

    2004-05-01

    This paper describes the work done to develop average annual streamflow estimates and power potential for the states of Alaska and Hawaii. The Elevation Derivatives for National Applications (EDNA) database was used, along with climatic datasets, to develop flow and power estimates for every stream reach in the EDNA database. Estimates of average annual streamflows were derived using state-specific regression equations, which were functions of average annual precipitation, precipitation intensity, drainage area, and other elevation-derived parameters. Power potential was calculated through the use of the average annual streamflow and the hydraulic head of each reach, which is calculated from the EDNA digital elevation model. In all, estimates of streamflow and power potential were calculated for over 170,000 stream segments in the Alaskan and Hawaiian datasets.

  1. Modulation characteristics of a high-power semiconductor Master Oscillator Power Amplifier (MOPA)

    NASA Technical Reports Server (NTRS)

    Cornwell, Donald Mitchell, Jr.

    1992-01-01

    A semiconductor master oscillator-power amplifier was demonstrated using an anti-reflection (AR) coated broad area laser as the amplifier. Under CW operation, diffraction-limited single-longitudinal-mode powers up to 340 mW were demonstrated. The characteristics of the far-field pattern were measured and compared to a two-dimensional reflective Fabry-Perot amplifier model of the device. The MOPA configuration was modulated by the master oscillator. Prior to injection into the amplifier, the amplitude and frequency modulation properties of the master oscillator were characterized. The frequency response of the MOPA configuration was characterized for an AM/FM modulated injection beam, and was found to be a function of the frequency detuning between the master oscillator and the resonant amplifier. A shift in the phase was also observed as a function of frequency detuning; this phase shift is attributed to the optical phase shift imparted to a wave reflected from a Fabry-Perot cavity. Square-wave optical pulses were generated at 10 MHz and 250 MHz with diffraction-limited peak powers of 200 mW and 250 mW. The peak power for a given modulation frequency is found to be limited by the injected power and the FM modulation at that frequency. The modulation results make the MOPA attractive for use as a transmitter source in applications such as free-space communications and ranging/altimetry.

  2. Technical options for high average power free electron milimeter-wave and laser devices

    NASA Technical Reports Server (NTRS)

    Swingle, James C.

    1989-01-01

    Many of the potential space power beaming applications require the generation of directed energy beams with respectable amounts of average power (MWs). A tutorial summary is provided here on recent advances in the laboratory aimed at producing direct conversion of electrical energy to electromagnetic radiation over a wide spectral regime from microwaves to the ultraviolet.

  3. Time Averaged Transmitter Power and Exposure to Electromagnetic Fields from Mobile Phone Base Stations

    PubMed Central

    Bürgi, Alfred; Scanferla, Damiano; Lehmann, Hugo

    2014-01-01

    Models for exposure assessment of high frequency electromagnetic fields from mobile phone base stations need the technical data of the base stations as input. One of these parameters, the Equivalent Radiated Power (ERP), is a time-varying quantity, depending on communication traffic. In order to determine temporal averages of the exposure, corresponding averages of the ERP have to be available. These can be determined as duty factors, the ratios of the time-averaged power to the maximum output power according to the transmitter setting. We determine duty factors for UMTS from the data of 37 base stations in the Swisscom network. The UMTS base stations sample contains sites from different regions of Switzerland and also different site types (rural/suburban/urban/hotspot). Averaged over all regions and site types, a UMTS duty factor F ≈ 0.32 ± 0.08 for the 24 h-average is obtained, i.e., the average output power corresponds to about a third of the maximum power. We also give duty factors for GSM based on simple approximations and a lower limit for LTE estimated from the base load on the signalling channels. PMID:25105551

  4. High-average-power operation of a pulsed Raman fiber amplifier at 1686 nm.

    PubMed

    Yao, Weichao; Chen, Bihui; Zhang, Jianing; Zhao, Yongguang; Chen, Hao; Shen, Deyuan

    2015-05-01

    We report on high-average-power operation of a pulsed Raman fiber amplifier at ~1686 nm which cannot be covered by rare-earth-doped fiber lasers. The Raman fiber amplifier was pumped by a home-made 1565.2 nm Q-switched Er,Yb fiber laser and worked at a repetition frequency of 184 kHz. With 0.8 km Raman fiber, 4.4 W of average output power at the 1st order Stokes wavelength of 1686.5 nm was obtained for launched pump power of 16.2 W, corresponding to an optical-to-optical conversion efficiency of 27.2%. Further increasing the pump power, high-order Stokes waves grew gradually, resulting in a total output power of 6.7 W at the 19.2 W launched pump power. PMID:25969195

  5. Performance and production requirements for the optical components in a high-average-power laser system

    SciTech Connect

    Chow, R.; Doss, F.W.; Taylor, J.R.; Wong, J.N.

    1999-07-02

    Optical components needed for high-average-power lasers, such as those developed for Atomic Vapor Laser Isotope Separation (AVLIS), require high levels of performance and reliability. Over the past two decades, optical component requirements for this purpose have been optimized and performance and reliability have been demonstrated. Many of the optical components that are exposed to the high power laser light affect the quality of the beam as it is transported through the system. The specifications for these optics are described including a few parameters not previously reported and some component manufacturing and testing experience. Key words: High-average-power laser, coating efficiency, absorption, optical components

  6. Thermal Management of Power Semiconductor Packages - Matching Cooling Technologies with Packaging Technologies (Presentation)

    SciTech Connect

    Bennion, K.; Moreno, G.

    2010-04-27

    Heat removal for power semiconductor devices is critical for robust operation. Because there are different packaging options, different thermal management technologies, and a range of applications, there is a need for a methodology to match cooling technologies and package configurations to target applications. To meet this need, a methodology was developed to compare the sensitivity of cooling technologies on the overall package thermal performance over a range of power semiconductor packaging configurations. The results provide insight into the trade-offs associated with cooling technologies and package configurations. The approach provides a method for comparing new developments in power semiconductor packages and identifying potential thermal control technologies for the package. The results can help users select the appropriate combination of packaging configuration and cooling technology for the desired application.

  7. Transparent ceramic photo-optical semiconductor high power switches

    DOEpatents

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  8. Power conversion efficiency of semiconductor injection lasers and laser arrays in CW operation

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1985-01-01

    The problem of optimizing power conversion efficiency of semiconductor lasers and laser arrays and minimizing efficiency degradation due to temperature effects is treated. A method for calculating this efficiency is described and some calculated results are presented and discussed. Under some conditions, a small increase in the thermal resistance of the device can result in a large reduction of its efficiency. Temperature effects are important in high-power semiconductor laser, and in particular in laser arrays, where low thermal resistance heat sinking may be crucial to the device operation.

  9. Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion

    SciTech Connect

    2010-09-01

    ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

  10. Dynamic Power Management for Sensor Node in WSN Using Average Reward MDP

    NASA Astrophysics Data System (ADS)

    Kianpisheh, Somayeh; Charkari, Nasrolah Moghadam

    Reducing energy consumption is one of the key challenges in sensor networks. One technique to reduce energy consumption is dynamic power management. In this paper we model power management problem in a sensor node as an average reward Markov Decision Process and solve it using dynamic programming. We achieve an optimal policy that maximizes long-term average of utility per energy consumption. Simulation results show our approach has the ability of reaching to the same amount of utility as always on policy while consuming less energy than always on policy.

  11. High average power parametric frequency conversion-new concepts and new pump sources

    SciTech Connect

    Velsko, S.P.; Webb, M.S.

    1994-03-01

    A number of applications, including long range remote sensing and antisensor technology, require high average power tunable radiation in several distinct spectral regions. Of the many issues which determine the deployability of optical parametric oscillators (OPOS) and related systems, efficiency and simplicity are among the most important. It is only recently that the advent of compact diode laser pumped solid state lasers has produced pump sources for parametric oscillators which can make compact, efficient, high average power tunable sources possible. In this paper we outline several different issues in parametric oscillator and pump laser development which are currently under study at Lawrence Livermore National Laboratory.

  12. High-average-power 100-Hz repetition rate table-top soft x-ray lasers

    NASA Astrophysics Data System (ADS)

    Rocca, Jorge J.; Reagan, Brendan A.; Wernsing, Keith; Wang, Yong; Yin, Liang; Wang, Shoujun; Berrill, Mark; Woolston, Mark R.; Curtis, Alden H.; Furch, Federico J. A.; Shlyaptsev, Vyacheslav N.; Luther, Brad M.; Patel, Dinesh; Marconi, Mario C.; Menoni, Carmen S.

    2013-09-01

    The table-top generation of high average power coherent soft x-ray radiation in a compact set up is of high interest for numerous applications. We have demonstrated the generation of bright soft x-ray laser pulses at 100 Hz repetition rate with record-high average power from compact plasma amplifiers excited by an ultrafast diode-pumped solid state laser. Results of compact λ=18.9nm Ni-like Mo and λ=13.9nm Ni-like Ag lasers operating at 100 Hz repetition rate are discussed.

  13. Average power scaling of UV excimer lasers drives flat panel display and lidar applications

    NASA Astrophysics Data System (ADS)

    Herbst, Ludolf; Delmdahl, Ralph F.; Paetzel, Rainer

    2012-03-01

    Average power scaling of 308nm excimer lasers has followed an evolutionary path over the last two decades driven by diverse industrial UV laser microprocessing markets. Recently, a new dual-oscillator and beam management concept for high-average power upscaling of excimer lasers has been realized, for the first time enabling as much as 1.2kW of stabilized UV-laser average output power at a UV wavelength of 308nm. The new dual-oscillator concept enables low temperature polysilicon (LTPS) fabrication to be extended to generation six glass substrates. This is essential in terms of a more economic high-volume manufacturing of flat panel displays for the soaring smartphone and tablet PC markets. Similarly, the cost-effective production of flexible displays is driven by 308nm excimer laser power scaling. Flexible displays have enormous commercial potential and can largely use the same production equipment as is used for rigid display manufacturing. Moreover, higher average output power of 308nm excimer lasers aids reducing measurement time and improving the signal-to-noise ratio in the worldwide network of high altitude Raman lidar stations. The availability of kW-class 308nm excimer lasers has the potential to take LIDAR backscattering signal strength and achievable altitude to new levels.

  14. Silicon carbide, a semiconductor for space power electronics

    NASA Technical Reports Server (NTRS)

    Powell, J. A.; Matus, Lawrence G.

    1991-01-01

    After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

  15. Silicon carbide, a semiconductor for space power electronics

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Matus, Lawrence G.

    1991-01-01

    After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

  16. Megawatt-scale average-power ultrashort pulses in an enhancement cavity.

    PubMed

    Carstens, H; Lilienfein, N; Holzberger, S; Jocher, C; Eidam, T; Limpert, J; Tünnermann, A; Weitenberg, J; Yost, D C; Alghamdi, A; Alahmed, Z; Azzeer, A; Apolonski, A; Fill, E; Krausz, F; Pupeza, I

    2014-05-01

    We investigate power scaling of ultrashort-pulse enhancement cavities. We propose a model for the sensitivity of a cavity design to thermal deformations of the mirrors due to the high circulating powers. Using this model and optimized cavity mirrors, we demonstrate 400 kW of average power with 250 fs pulses and 670 kW with 10 ps pulses at a central wavelength of 1040 nm and a repetition rate of 250 MHz. These results represent an average power improvement of one order of magnitude compared to state-of-the-art systems with similar pulse durations and will thus benefit numerous applications such as the further scaling of tabletop sources of hard x rays (via Thomson scattering of relativistic electrons) and of soft x rays (via high harmonic generation). PMID:24784054

  17. High average power quasi-CW single-mode green and UV fiber lasers

    NASA Astrophysics Data System (ADS)

    Avdokhin, Alexey; Gapontsev, Valentin; Kadwani, Pankaj; Vaupel, Andreas; Samartsev, Igor; Platonov, Nicholai; Yusim, Alex; Myasnikov, Daniil

    2015-02-01

    Kilowatt-level narrow-linewidth SM ytterbium fiber laser operating in high-repetition-rate QCW regime was used to obtain 700 W average power at 532 nm with single-mode beam quality and wall-plug efficiency of over 23 %. To the best of our knowledge, this is ~60 % higher power than previously reported for single-mode green lasers based on other platforms, and also is ~30 % increase comparing to the previous result obtained by our group on the base of similar fiber laser platform. We have also experimentally proved that the same type of fiber laser can be used for generating of world-record levels of power at other wavelengths of visible and UV spectral ranges by employing cascaded non-linear frequency conversion. Thus, utilizing frequency tripling in 2 LBO crystals, we achieved over 160 W average power of nearly single-mode UV light at 355 nm with THG efficiency of more than 25 %. As far as we know, this is the highest output power ever reported for UV laser with nearly diffraction limited beam quality. We also conducted some preliminary experiments to demonstrate suitability of our approach for generating longer wavelengths of the visible spectrum. By pre-shifting fundamental emission wavelength in fiber Raman converter, followed by frequency doubling in NCPM LBO, we obtained average powers of 36 W at 589 nm and 27 W at 615 nm. These proof-of-concept experiments were performed with low-power pump laser and were not fully optimized with respect to frequency conversion. Our analysis indicates that employing kW-level QCW ytterbium laser with optimized SRS and SHG converters we can achieve hundreds of Watts of average power in red and orange color with single-mode beam quality.

  18. Magnetic hysteresis curve influenced by power-semiconductor characteristics in pulse-width-modulation inverter

    NASA Astrophysics Data System (ADS)

    Fujisaki, Keisuke; Liu, Sungju

    2014-05-01

    The influence of power semiconductor characteristic in Pulse-width-modulation (PWM) inverter on the magnetic hysteresis curve in silicon steel is discussed through the measured magnetic hysteresis curves. The magnetic hysteresis curve of PWM inverter-fed silicon steel has a lot of minor loops as closed loops and open loops, which make an influence on the iron loss. Two shapes of minor loops are found to be caused by the voltage shifts and they are derived from the on-voltage of the semiconductors in PWM inverter circuit. Therefore, it is concluded that the power-semiconductor characteristic in PWM inverter makes an influence on the magnetic hysteresis curve in silicon steel.

  19. Optical design and performance of the amplifier stage for the average power laser experiment

    NASA Astrophysics Data System (ADS)

    Quimby, D. C.; Parazzoli, C. G.; Pistoresi, D. J.

    1992-07-01

    Boeing, in collaboration with Los Alamos and STI Optronics, is embarking on a program to build and operate the Average Power Laser Experiment (APLE) to demonstrate the high power capability of free-electron lasers at a wavelength of 10 μm. The experiment utilizes the single-accelerator, master-oscillator, power-amplifier (SAMOPA) approach. The performance of the power amplifier stage, as calculated by the time-dependent 3D FELEX code, is presented. The SAMOPA concept has important advantages in terms of excellent electron trapping fraction and remarkable insensitivity to slippage, input optical power, and detuning from resonance, but key requirements are placed on the e-beam peak current and emittance and on the allowable induced energy spread in the oscillator stage. Optical design tradeoffs between strong guiding and power extraction are described and a complete evaluation of the performance sensitivity to various error sources and misalignments is presented.

  20. Cryogenic Yb:YAG picosecond laser with high average power visible and ultraviolet harmonic generation

    NASA Astrophysics Data System (ADS)

    Brown, D. C.; Kowalewski, K.; Envid, V.; Zembek, J.; Canale, B.; Kolis, J. W.; McMillen, C. D.; Geisber, H.

    2012-06-01

    Cryogenic Yb:YAG lasers operating at 1029 nm have been demonstrated at Snake Creek Lasers with high average power CW and ultrafast output powers, and provide near diffraction-limited output beams that are ideal for applications in harmonic generation. We describe experiments that have produced high average power green output power at 515 nm as well as preliminary experiments producing UV output power at 257.25 nm. Frequency doubling experiments used a 20 mm long non-critically phase-matched LBO crystal mounted in a constant temperature oven. A mode-locked Yb fiber laser operating at 50 MHz was used to drive a two Yb:YAG cryogenic amplifier system, producing hundreds of watts of average power output with a FWHM pulsewidth of 12 ps. Doubling efficiencies of > 50 % have been observed. For frequency quadrupling, we have used hydrothermally grown KTTP crystals grown at Clemson University and Advanced Photonic Crystals. KBBF offers unprecedented UV transmission down to 155 nm, and was used in a Type I phasematching configuration. The properties of KBBF will be discussed, as well as the experimental results observed and conversion efficiency.

  1. GENERATION OF HIGH-AVERAGE-POWER ULTRABROAD-BAND INFRARED PULSES

    EPA Science Inventory

    This paper summarizes the results of analytical and numerical studies on a novel technique that is capable of providing high average power ultra broadband radiation that extends from approximately 2 to 16 m. Such a spectrum has several potential applications, including telecommu...

  2. Development of a high average power, CW, MM-wave FEL

    SciTech Connect

    Ramian, G.

    1995-12-31

    Important operational attributes of FELs remain to be demonstrated including high average power and single-frequency, extremely narrow-linewidth lasing. An FEL specifically designed to achieve these goals for scientific research applications is currently under construction. Its most salient feature is operation in a continuous-wave (CW) mode with an electrostatically generated, high-current, recirculating, DC electron beam.

  3. High Average Power Operation of a Scraper-Outcoupled Free-Electron Laser

    SciTech Connect

    Michelle D. Shinn; Chris Behre; Stephen Vincent Benson; Michael Bevins; Don Bullard; James Coleman; L. Dillon-Townes; Tom Elliott; Joe Gubeli; David Hardy; Kevin Jordan; Ronald Lassiter; George Neil; Shukui Zhang

    2004-08-01

    We describe the design, construction, and operation of a high average power free-electron laser using scraper outcoupling. Using the FEL in this all-reflective configuration, we achieved approximately 2 kW of stable output at 10 um. Measurements of gain, loss, and output mode will be compared with our models.

  4. Image registration and averaging of low laser power two-photon fluorescence images of mouse retina.

    PubMed

    Alexander, Nathan S; Palczewska, Grazyna; Stremplewski, Patrycjusz; Wojtkowski, Maciej; Kern, Timothy S; Palczewski, Krzysztof

    2016-07-01

    Two-photon fluorescence microscopy (TPM) is now being used routinely to image live cells for extended periods deep within tissues, including the retina and other structures within the eye . However, very low laser power is a requirement to obtain TPM images of the retina safely. Unfortunately, a reduction in laser power also reduces the signal-to-noise ratio of collected images, making it difficult to visualize structural details. Here, image registration and averaging methods applied to TPM images of the eye in living animals (without the need for auxiliary hardware) demonstrate the structural information obtained with laser power down to 1 mW. Image registration provided between 1.4% and 13.0% improvement in image quality compared to averaging images without registrations when using a high-fluorescence template, and between 0.2% and 12.0% when employing the average of collected images as the template. Also, a diminishing return on image quality when more images were used to obtain the averaged image is shown. This work provides a foundation for obtaining informative TPM images with laser powers of 1 mW, compared to previous levels for imaging mice ranging between 6.3 mW [Palczewska G., Nat Med.20, 785 (2014) Sharma R., Biomed. Opt. Express4, 1285 (2013)]. PMID:27446697

  5. The LUCIA project: a high average power ytterbium diode pumped solid state laser chain

    NASA Astrophysics Data System (ADS)

    Bourdet, Gilbert L.; Chanteloup, Jean-Christophe; Fulop, A.; Julien, Y.; Migus, Arnold

    2004-04-01

    With the goal to set up a high average power Diode Pumped Solid State Laser (100 Joules/10 Hz/10 ns), the Laboratory for Use of Intense Laser (LULI) is now studying various solutions concerning the amplifier medium, the cooling, the pumping and the extraction architectures. In this paper, we present the last states of these developments and the solutions already chosen.

  6. Bessel integrals in epsilon expansion: Squared spherical Bessel functions averaged with Gaussian power-law distributions

    NASA Astrophysics Data System (ADS)

    Tomaschitz, Roman

    2013-12-01

    Bessel integrals of type {int_0^infty {k^{μ+2}{e}^{-ak2-(b+{i} ω)k}j_l^{2} (pk)dk}} are studied, where the squared spherical Bessel function j {/l 2} is averaged with a modulated Gaussian power-law density. These integrals define the multipole moments of Gaussian random fields on the unit sphere, arising in multipole fits of temperature and polarization power spectra of the cosmic microwave background. The averages can be calculated in closed form as finite Hankel series, which allow high-precision evaluation. In the case of integer power-law exponents μ, singularities emerge in the series coefficients, which requires ɛ expansion. The pole extraction and regularization of singular Hankel series is performed, for integer Gaussian power-law densities as well as for the special case of Kummer averages (a = 0 in the exponential of the integrand). The singular ɛ residuals are used to derive combinatorial identities (sum rules) for the rational Hankel coefficients, which serve as consistency checks in precision calculations of the integrals. Numerical examples are given, and the Hankel evaluation of Gaussian and Kummer averages is compared with their high-index Airy approximation over a wide range of integer Bessel indices l.

  7. Gain measurements and average power capabilities of Cr(3+): LiSrAlF6

    NASA Astrophysics Data System (ADS)

    Hanson, F.; Bendall, C.; Poirier, P.

    1993-09-01

    Long wavelength operation of Cr:LiSrAlF6 is reported. The problem of thermal fracture effectively limits flash-lamp-pumped rod geometries to lower repetition rates. Thin face-pumped slabs allow higher average power capability, but peak gain could be limited by upconversion losses.

  8. Image registration and averaging of low laser power two-photon fluorescence images of mouse retina

    PubMed Central

    Alexander, Nathan S.; Palczewska, Grazyna; Stremplewski, Patrycjusz; Wojtkowski, Maciej; Kern, Timothy S.; Palczewski, Krzysztof

    2016-01-01

    Two-photon fluorescence microscopy (TPM) is now being used routinely to image live cells for extended periods deep within tissues, including the retina and other structures within the eye . However, very low laser power is a requirement to obtain TPM images of the retina safely. Unfortunately, a reduction in laser power also reduces the signal-to-noise ratio of collected images, making it difficult to visualize structural details. Here, image registration and averaging methods applied to TPM images of the eye in living animals (without the need for auxiliary hardware) demonstrate the structural information obtained with laser power down to 1 mW. Image registration provided between 1.4% and 13.0% improvement in image quality compared to averaging images without registrations when using a high-fluorescence template, and between 0.2% and 12.0% when employing the average of collected images as the template. Also, a diminishing return on image quality when more images were used to obtain the averaged image is shown. This work provides a foundation for obtaining informative TPM images with laser powers of 1 mW, compared to previous levels for imaging mice ranging between 6.3 mW [PalczewskaG., Nat Med. 20, 785 (2014)24952647 SharmaR., Biomed. Opt. Express 4, 1285 (2013)24009992]. PMID:27446697

  9. Estimating ensemble average power delivered by a piezoelectric patch actuator to a non-deterministic subsystem

    NASA Astrophysics Data System (ADS)

    Muthalif, Asan G. A.; Wahid, Azni N.; Nor, Khairul A. M.

    2014-02-01

    Engineering systems such as aircraft, ships and automotive are considered built-up structures. Dynamically they are taught of as being fabricated from many components that are classified as 'deterministic subsystems' (DS) and 'non-deterministic subsystems' (Non-DS). Structures' response of the DS is deterministic in nature and analysed using deterministic modelling methods such as finite element (FE) method. The response of Non-DS is statistical in nature and estimated using statistical modelling technique such as statistical energy analysis (SEA). SEA method uses power balance equation, in which any external input to the subsystem must be represented in terms of power. Often, input force is taken as point force and ensemble average power delivered by point force is already well-established. However, the external input can also be applied in the form of moments exerted by a piezoelectric (PZT) patch actuator. In order to be able to apply SEA method for input moments, a mathematical representation for moment generated by PZT patch in the form of average power is needed, which is attempted in this paper. A simply-supported plate with attached PZT patch is taken as a benchmark model. Analytical solution to estimate average power is derived using mobility approach. Ensemble average of power given by the PZT patch actuator to the benchmark model when subjected to structural uncertainties is also simulated using Lagrangian method and FEA software. The analytical estimation is compared with the Lagrangian model and FE method for validation. The effects of size and location of the PZT actuators on the power delivered to the plate are later investigated.

  10. High average power of Q-switched Tm:YAG slab laser

    NASA Astrophysics Data System (ADS)

    Jin, Lin; Liu, Pian; Liu, Xuan; Huang, Haitao; Yao, Weichao; Shen, Deyuan

    2016-08-01

    A laser-diode end-pumped Tm:YAG single crystal slab laser in acousto-optic Q-switched operation was demonstrated. For Q-switched operation, the average output power of 20.7 W at 1 kHz was achieved under the absorbed pump power of 83.6 W, corresponding to the slope efficiency of 36.1%, the shortest pulse width of 84 ns and the maximum pulse energy of 20.7 mJ with peak power of 250 kW were obtained.

  11. High average power picosecond pulse generation from a thulium-doped all-fiber MOPA system.

    PubMed

    Liu, Jiang; Wang, Qian; Wang, Pu

    2012-09-24

    We report a stable highly-integrated high power picosecond thulium-doped all-fiber MOPA system without using conventional chirped pulse amplification technique. The master oscillator was passively mode-locked by a SESAM to generate average power of 15 mW at a fundamental repetition rate of 103 MHz in a short linear cavity, and a uniform narrow bandwidth FBG is employed to stabilize the passively mode-locked laser operation. Two-stage double-clad thulium-doped all-fiber amplifiers were used directly to boost average power to 20.7 W. The laser center wavelength was 1962.8 nm and the pulse width was 18 ps. The single pulse energy and peak-power after the amplication were 200 nJ and 11.2 kW respectively. To the best of our knowledge, this is the highest average power ever reported for a picosecond thulium-doped all-fiber MOPA system. PMID:23037392

  12. Recent advances in the development of high average power induction accelerators for industrial and environmental applications

    SciTech Connect

    Neau, E.L.

    1994-09-01

    Short-pulse accelerator technology developed during the early 1960`s through the late 1980`s is being extended to high average power systems capable of use in industrial and environmental applications. Processes requiring high dose levels and/or high volume throughput will require systems with beam power levels from several hundreds of kilowatts to megawatts. Beam accelerating potentials can range from less than 1 MeV to as much as 10 MeV depending on the type of beam, depth of penetration required, and the density of the product being treated. This paper addresses the present status of a family of high average power systems, with output beam power levels up to 200 kW, now in operation that use saturable core switches to achieve output pulse widths of 50 to 80 nanoseconds. Inductive adders and field emission cathodes are used to generate beams of electrons or x-rays at up to 2.5 MeV over areas of 1000 cm{sup 2}. Similar high average power technology is being used at {le} 1 MeV to drive repetitive ion beam sources for treatment of material surfaces over 100`s of cm{sup 2}.

  13. Nature of the Thermoelectric Power in Bipolar Semiconductors

    NASA Astrophysics Data System (ADS)

    Titov, O. Yu; Bulat, L. P.; Gurevich, Yu. G.

    2016-08-01

    Thermoelectricity increasingly draws the attention of researchers because it can provide us with methods to generate environmentally clean energy and solid-state cooling. However, some problems in thermoelectricity's physics remain unsolved. In this paper, a new approach to thermoelectric phenomena is presented, one that uses a linear description of the nonequilibrium charge carrier transport. The role of nonequilibrium carriers of both surface and bulk recombination processes has been shown to be crucial even within the linear approximation. Electron and hole quasi-Fermi levels originated from the thermal field are explicitly obtained in the case of a thermoelectric current flowing through an external circuit; the necessary corresponding boundary conditions are obtained. For the first time, it is shown that the quasi-Fermi level of one of the carriers can be a nonmonotonous function of spatial coordinates. General expressions for the thermoelectric current, the thermo-electromotive force (thermo-emf), and the electrical resistance of bipolar semiconductors have been obtained. Also for the first time, the influence of both surface recombination and surface resistance in thermoelectric phenomena was taken into account.

  14. Electron-beam and high speed optical diagnostics for the Average Power Laser Experiment (APLE) program

    NASA Astrophysics Data System (ADS)

    Lumpkin, A. H.; McVey, B. D.; Greegor, R. B.; Dowell, D. H.

    The Average Power Laser Experiment (APLE) program is a collaboration of Boeing and Los Alamos to build a free-electron laser (FEL) operating at a wavelength of 10 microns and an average power of 100 kW. This program includes demonstration experiments at Boeing on the injector and at Los Alamos on a single accelerator master oscillator power amplifier (SAMOPA). In response to the simulations of the expected electron beam properties, diagnostic plans have been developed for the low-duty and the 25 percent-duty operations of APLE. Preliminary evaluations of diagnostics based on information conversion to visible or near infrared light (optical transition radiation, Cerenkov radiation, synchrotron radiation, and spontaneous emission radiation) or electrical signals (striplines, toroids, flying wires, etc.) are addressed.

  15. Non-chain pulsed DF laser with an average power of the order of 100 W

    NASA Astrophysics Data System (ADS)

    Pan, Qikun; Xie, Jijiang; Wang, Chunrui; Shao, Chunlei; Shao, Mingzhen; Chen, Fei; Guo, Jin

    2016-07-01

    The design and performance of a closed-cycle repetitively pulsed DF laser are described. The Fitch circuit and thyratron switch are introduced to realize self-sustained volume discharge in SF6-D2 mixtures. The influences of gas parameters and charging voltage on output characteristics of non-chain pulsed DF laser are experimentally investigated. In order to improve the laser power stability over a long period of working time, zeolites with different apertures are used to scrub out the de-excitation particles produced in electric discharge. An average output power of the order of 100 W was obtained at an operating repetition rate of 50 Hz, with amplitude difference in laser pulses <8 %. And under the action of micropore alkaline zeolites, the average power fell by 20 % after the laser continuing working 100 s at repetition frequency of 50 Hz.

  16. Measurement of the absorption of nonlinear crystals used for high-average-power frequency doubling

    NASA Astrophysics Data System (ADS)

    Mann, Guido; Seidel, Stefan

    1997-07-01

    The absorption coefficients of nonlinear crystals for fundamental and second harmonic wave are of great importance for high average power second harmonic generation. A practical method to measure low absorption coefficients for high average power second harmonic generation. A practical method to measure low absorption coefficients is to use an interferometric laser calorimeter with high power lasers. Therefore Q-switched Nd:YAG laser systems with intracavity second harmonic generation are used. The measurements are made with optical powers up to 300 W and 45 W, respectively. Because of the high power, the resolution limit for the absorption coefficients is 0.001 percent/cm. The absorption coefficients of KTP and LBO crystals of different manufacturers are determined. The results are used for a numerical model which takes into account the decrease of conversion efficiency due to thermal effects caused by the absorption of laser power in the nonlinear crystal. This model describes saturation effects which appear in the range of 100 W in the green using a KTP crystal. A new idea for compensation of thermal effects will be presented.

  17. Distributed and coupled 2D electro-thermal model of power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Belkacem, Ghania; Lefebvre, Stéphane; Joubert, Pierre-Yves; Bouarroudj-Berkani, Mounira; Labrousse, Denis; Rostaing, Gilles

    2014-05-01

    The development of power electronics in the field of transportations (automotive, aeronautics) requires the use of power semiconductor devices providing protection and diagnostic functions. In the case of series protections power semiconductor devices which provide protection may operate in shortcircuit and act as a current limiting device. This mode of operations is very constraining due to the large dissipation of power. In these particular conditions of operation, electro-thermal models of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors based on the coupling between two computation softwares (Matlab and Cast3M) is described in this paper. The 2D electro-thermal model is able to predict (i) the temperature distribution on chip surface well as in the volume under short-circuit operations, (ii) the effect of the temperature on the distribution of the current flowing within the die and (iii) the effects of the ageing of the metallization layer on the current density and the temperature. In this paper, the electrical and thermal models are described as well as the implemented coupling scheme.

  18. Techniques for increasing output power from mode-locked semiconductor lasers

    SciTech Connect

    Mar, A.; Vawter, G.A.

    1996-02-01

    Mode-locked semiconductor lasers have drawn considerable attention as compact, reliable, and relatively inexpensive sources of short optical pulses. Advances in the design of such lasers have resulted in vast improvements in pulsewidth and noise performance, at a very wide range of repetition rates. An attractive application for these lasers would be to serve as alternatives for large benchtop laser systems such as dye lasers and solid-state lasers. However, mode-locked semiconductor lasers have not yet approached the performance of such systems in terms of output power. Different techniques for overcoming the problem of low output power from mode-locked semiconductor lasers will be discussed. Flared and arrayed lasers have been used successfully to increase the pulse saturation energy limit by increasing the gain cross section. Further improvements have been achieved by use of the MOPA configuration, which utilizes a flared semiconductor amplifier s amplify pulses to energies of 120 pJ and peak powers of nearly 30W.

  19. A kilowatt average power laser for sub-picosecond materials processing

    SciTech Connect

    Stephen V. Benson; George R. Neil; C. Bohn; , G. Biallas; D. Douglas; F. Dylla; J. Fugitt; K. Jordan; G. Krafft; , L. Merminga; , J. Preble; , Michelle D. Shinn; T. Siggins; R. Walker; B. Yunn

    1999-11-01

    The performance of laser pulses in the sub-picosecond range for materials processing is substantially enhanced over similar fluences delivered in longer pulses. Recent advances in the development of solid state lasers have progressed significantly toward the higher average powers potentially useful for many applications. Nonetheless, prospects remain distant for multi-kilowatt sub-picosecond solid state systems such as would be required for industrial scale surface processing of metals and polymers. The authors present operational results from the world's first kilowatt scale ultra-fast materials processing laser. A Free Electron Laser (FEL) called the IR Demo is operational as a User Facility at Thomas Jefferson National Accelerator Facility in Newport News, Virginia, USA. In its initial operation at high average power it is capable of wavelengths in the 2 to 6 micron range and can produce {approximately}0.7 ps pulses in a continuous train at {approximately}75 MHz. This pulse length has been shown to be nearly optimal for deposition of energy in materials at the surface. Upgrades in the near future will extend operation beyond 10 kW CW average power in the near IR and kilowatt levels of power at wavelengths from 0.3 to 60 microns. This paper will cover the design and performance of this groundbreaking laser and operational aspects of the User Facility.

  20. High-average-power actively-mode-locked Tm3+ fiber lasers

    NASA Astrophysics Data System (ADS)

    Eckerle, Michael; Kieleck, Christelle; Hübner, Philipp; Świderski, Jacek; Jackson, Stuart D.; Mazé, Gwenael; Eichhorn, Marc

    2012-02-01

    Fiber lasers emitting in the 2 μm wavelength range doped with thulium ions can be used as highly efficient pump sources for nonlinear converters to generate mid-infrared radiation. For spectroscopic purposes, illumination and countermeasures, a broad mid-infrared emission spectrum is advantageous. This can be reached by supercontinuum generation in fibers, e.g. fluoride fibers, which up to now has, however, only been presented with either low average power, complex Raman-shifted 1.55 μm pump sources or multi-stage amplifier pump schemes. Here we present recent results of a new actively-mode-locked single-oscillator scheme that can provide the high-repetition rate sub-ns pump pulses needed for pumping supercontinuum generators. A thulium-doped silica fiber laser is presented that provides > 11 W of average power CW-mode-locked pulses at 38 MHz repetition rate at ~ 38 ps pulse width. Upgrading the setup to allow Q-switched mode-locked operation yields mode-locked 40 MHz pulses arranged in 60 kHz bunched Q-switch envelopes and thus increases further the available peak power. In this Q-switched mode-locked regime over 5 W of average power has been achieved.

  1. Pulsed operation of a high average power Yb:YAG thin-disk multipass amplifier.

    PubMed

    Schulz, M; Riedel, R; Willner, A; Düsterer, S; Prandolini, M J; Feldhaus, J; Faatz, B; Rossbach, J; Drescher, M; Tavella, F

    2012-02-27

    An Yb:YAG thin-disk multipass laser amplifier system was developed operating in a 10 Hz burst operation mode with 800 µs burst duration and 100 kHz intra-burst repetition rate. Methods for the suppression of parasitic amplified spontaneous emission are presented. The average output pulse energy is up to 44.5 mJ and 820 fs compressed pulse duration. The average power of 4.45 kW during the burst is the highest reported for this type of amplifier. PMID:22418308

  2. High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO₄ laser at 1342 nm with a semiconductor saturable absorber mirror.

    PubMed

    Li, Fang-Qin; Liu, Ke; Han, Lin; Zong, Nan; Bo, Yong; Zhang, Jing-Yuan; Peng, Qin-Jun; Cui, Da-Fu; Xu, Zu-Yan

    2011-04-15

    A high-power 880-nm diode-directly-pumped passively mode-locked 1342 nm Nd:YVO₄ laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The laser mode radii in the laser crystal and on the SESAM were optimized carefully using the ABCD matrix formalism. An average output power of 2.3 W was obtained with a repetition rate of 76 MHz and a pulse width of 29.2 ps under an absorbed pump power of 12.1 W, corresponding to an optical-optical efficiency of 19.0% and a slope efficiency of 23.9%, respectively. PMID:21499398

  3. Power and length requirements for all-optical switching in semiconductor-doped glass waveguides

    NASA Astrophysics Data System (ADS)

    Mayweather, Derek T.; Digonnet, Michel J. F.; Pantell, Richard H.; Shaw, H. J.

    1994-10-01

    We present a theoretical model that computes the nonlinear index (n2) of semiconductor- doped glasses (SDG), based on the material's properties, and predicts the power and length requirements, as well as the optimum operating wavelengths, for an all-optical SDG waveguide switch. The main conclusions are that (1) n2 depends strongly on pump intensity, which partly explains the large disparity in reported values of n2, (2) the pump and signal wavelengths should be in specific and different ranges to minimize switching power and signal loss, (3) for CdSSe- and CdTe-doped glasses, n2 is relatively small, and the switching power requirement for these two SDGs is consequently quite high (2 - 16 W). We provide evidence that this weak nonlinearity, compared to that of similar semiconductors in bulk, is due to the strong nonradiative recombination of carriers arising from the small size of the semiconductor microcrystallites. Projections indicate that the switching power would be reduced by up to three orders of magnitude by increasing the microcrystallite size, thus producing a slower (ns) but more power-efficient switch.

  4. Composite Thin-Disk Laser Scaleable to 100 kW Average Power Output and Beyond

    SciTech Connect

    Zapata, L.; Beach, R.; Payne, S.

    2000-06-01

    By combining newly developed technologies to engineer composite laser components with state of the art diode laser pump delivery technologies, we are in a position to demonstrate high beam quality, continuous wave, laser radiation at scaleable high average powers. The crucial issues of our composite thin disk laser technology were demonstrated during a successful first light effort. The high continuous wave power levels that are now within reach make this system of high interest to future DoD initiatives in solid-state laser technology for the laser weapon arena.

  5. High-average-power water window soft X-rays from an Ar laser plasma

    NASA Astrophysics Data System (ADS)

    Amano, Sho

    2016-07-01

    A high average power of 140 mW and high conversion efficiency of 14% were demonstrated in “water window” soft X-rays generated using a laser plasma source developed in-house, when a solid Ar target was irradiated by a commercial Nd:YAG Q-switched laser with an energy of 1 J at a repetition rate of 1 Hz. This soft X-ray power compared favorably with that produced using a synchrotron radiation source, and the developed laser plasma source can be used in various applications, such as soft X-ray microscopy, in place of synchrotron facilities.

  6. Synchronously injected amplifiers, a novel approach to high-average-power FEL

    SciTech Connect

    Nguyen, D.C.; Fortgang, C.M.; Goldstein, J.C.; Kinross-Wright, J.M.; Sheffield, R.L.

    1996-11-01

    Two new FEL ideas based on synchronously injected amplifiers are described. Both of these rely on the synchronous injection of the optical signal into a high-gain, high-efficiency tapered wiggler. The first concept, called Regenerative Amplifier FEL (RAFEL), uses an optical feedback loop to provide a coherent signal at the wiggler entrance so that the optical power can reach saturation rapidly. The second idea requires the use of a uniform wiggler in the feedback loop to generate light that can be synchronously injected back into the first wiggler. The compact Advanced FEL is being modified to implement the RAFEL concept. We describe future operation of the Advanced FEL at high average current and discuss the possibility of generating 1 kW average power.

  7. A high-average-power blue-green laser for underwater communications

    NASA Astrophysics Data System (ADS)

    Pacheco, D. P.; Aldag, H. R.; Klimek, D. E.; Rostler, P. S.; Scheps, R.

    A flashlamp-pumped dye laser designed for high average power at an atomic resonance line and long service life is described. Initial characterization yields broad output in excess of 4 J/pulse and tuned output greater than 1.5 J/pulse at 458 nm and 30 mA bandwidth. The laser design features are described, including the laser head, resonator, lamp driving circuitry, dye replenishment, and system component limiting service life.

  8. Physical optics and the direction of maximization of the far-field average power

    NASA Astrophysics Data System (ADS)

    Asvestas, John S.

    1986-12-01

    For the problem of physical optics scattering by a perfectly conducting plate of finite dimensions and arbitrary shape, attention is drawn to the fact that the directions in which the far-field average power is maximized can be easily determined for H-polarization, while the same is not true for E-polarization. Moreover, it is shown by means of an example that the directions of maximization for E-polarization are not necessarily those for H-polarization.

  9. High-average-power narrow-line-width sum frequency generation 589 nm laser

    NASA Astrophysics Data System (ADS)

    Lu, Yanhua; Fan, Guobin; Ren, Huaijin; Zhang, Lei; Xu, Xiafei; Zhang, Wei; Wan, Min

    2015-10-01

    An 81 W average-power all-solid-state sodium beacon laser at 589 nm with a repetition rate of 250 Hz is introduced, which is based on a novel sum frequency generation idea between two high-energy, different line widths, different beam quality infrared lasers (a 1064 nm laser and a 1319 nm laser). The 1064 nm laser, which features an external modulated CW single frequency seed source and two stages of amplifiers, can provide average-power of 150 W, beam quality M2 of ~1.8 with ultra-narrow line width (< 100 kHz). The 1319 nm laser can deliver average-power of 100 W, beam quality M2 of ~3.0 with a narrow line width of ~0.3 GHz. By sum frequency mixing in a LBO slab crystal (3 mm x 12 mm x 50 mm), pulse energy of 325 mJ is achieved at 589 nm with a conversion efficiency of 32.5 %. Tuning the center wavelength of 1064 nm laser by a PZT PID controller, the target beam's central wavelength is accurately locked to 589.15910 nm with a line width of ~0.3 GHz, which is dominated mainly by the 1319 nm laser. The beam quality is measured to be M2 < 1.3. The pulse duration is measured to be 150 μs in full-width. To the best of our knowledge, this represents the highest average-power for all-solid-state sodium beacon laser ever reported.

  10. Use of induction linacs with nonlinear magnetic drive as high average power accelerators

    SciTech Connect

    Birx, D.L.; Cook, E.G.; Hawkins, S.A.; Newton, M.A.; Poor, S.E.; Reginato, L.L.; Schmidt, J.A.; Smith, M.W.

    1984-08-20

    The marriage of induction linac technology with Nonlinear Magnetic Modulators has produced some unique capabilities. It appears possible to produce electron beams with average currents measured in amperes, at gradients exceeding 1 Mev/meter, and with power efficiencies approaching 50%. A 2 MeV, 5 kA electron accelerator is under construction at Lawrence Livermore National Laboratory (LLNL) to allow us to demonstrate some of these concepts. Progress on this project is reported here.

  11. Temperature-insensitive frequency tripling for generating high-average power UV lasers.

    PubMed

    Zhong, Haizhe; Yuan, Peng; Wen, Shuangchun; Qian, Liejia

    2014-02-24

    Aimed for generating high-average power ultraviolet (UV) lasers via third-harmonic generation (THG) consisting of frequency doubling and tripling stages, we numerically and experimentally demonstrate a novel frequency tripling scheme capable of supporting temperature-insensitive phase-matching (PM). Two cascaded tripling crystals, with opposite signs of the temperature derivation of phase-mismatch, are proposed and theoretically studied for improving the temperature-acceptance of PM. The proof-of-principle tripling experiment using two crystals of LBO and BBO shows that the temperature acceptance can be ~1.5 times larger than that of using a single tripling crystal. In addition, the phase shift caused by air dispersion, along with its influence on the temperature-insensitive PM, are also discussed. To illustrate the potential applications of proposed two-crystal tripling design in the high-average-power regime, full numerical simulations for the tripling process, are implemented based on the realistic crystals. The demonstrated two-crystal tripling scheme may provide a promising route to high-average-power THG in the UV region. PMID:24663750

  12. Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.

    PubMed

    Heo, Jinseong; Byun, Kyung-Eun; Lee, Jaeho; Chung, Hyun-Jong; Jeon, Sanghun; Park, Seongjun; Hwang, Sungwoo

    2013-01-01

    Graphene heterostructures in which graphene is combined with semiconductors or other layered 2D materials are of considerable interest, as a new class of electronic devices has been realized. Here we propose a technology platform based on graphene-thin-film-semiconductor-metal (GSM) junctions, which can be applied to large-scale and power-efficient electronics compatible with a variety of substrates. We demonstrate wafer-scale integration of vertical field-effect transistors (VFETs) based on graphene-In-Ga-Zn-O (IGZO)-metal asymmetric junctions on a transparent 150 × 150 mm(2) glass. In this system, a triangular energy barrier between the graphene and metal is designed by selecting a metal with a proper work function. We obtain a maximum current on/off ratio (Ion/Ioff) up to 10(6) with an average of 3010 over 2000 devices under ambient conditions. For low-power logic applications, an inverter that combines complementary n-type (IGZO) and p-type (Ge) devices is demonstrated to operate at a bias of only 0.5 V. PMID:24256403

  13. Hybrid metal-semiconductor mirror for high power VECSEL

    NASA Astrophysics Data System (ADS)

    Laurain, Alexandre; Gbele, Kokou; Hader, Jorg; Stolz, Wolfgang; Koch, Stephan; Ruiz Perez, Antje; Moloney, Jerome V.

    2016-03-01

    We demonstrate a low thermal impedance hybrid mirror VECSEL. We used only 14 pairs of AlGaAs/AlAs, transparent at the pump wavelength, and we used a patterned mask to deposit pure gold on areas of the chip to be pumped, and Ti/Au on other area to circumvent the poor adhesion of gold on GaAs. A higher gain is observed on an area metallized with pure gold and an output power of 4W was obtained, showing the effectiveness of the metallic mirror and validating the bonding quality. Chip processing and laser characteristics are studied in detail and compared to simulations.

  14. High-index asymptotics of spherical Bessel products averaged with modulated Gaussian power laws

    NASA Astrophysics Data System (ADS)

    Tomaschitz, Roman

    2014-12-01

    Bessel integrals of type are investigated, where the kernel g( k) is a modulated Gaussian power-law distribution , and the jl ( m) are multiple derivatives of spherical Bessel functions. These integrals define the multipole moments of Gaussian random fields on the unit sphere, arising in multipole fits of temperature and polarization power spectra of the cosmic microwave background. Two methods allowing efficient numerical calculation of these integrals are presented, covering Bessel indices l in the currently accessible multipole range 0 ≤ l ≤ 104 and beyond. The first method is based on a representation of spherical Bessel functions by Lommel polynomials. Gaussian power-law averages can then be calculated in closed form as finite Hankel series of parabolic cylinder functions, which allow high-precision evaluation. The second method is asymptotic, covering the high- l regime, and is applicable to general distribution functions g( k) in the integrand; it is based on the uniform Nicholson approximation of the Bessel derivatives in conjunction with an integral representation of squared Airy functions. A numerical comparison of these two methods is performed, employing Gaussian power laws and Kummer distributions to average the Bessel products.

  15. Narrow-linewidth master-oscillator power amplifier based on a semiconductor tapered amplifier.

    PubMed

    Wilson, A C; Sharpe, J C; McKenzie, C R; Manson, P J; Warrington, D M

    1998-07-20

    The output of a grating-stabilized external-cavity diode laser was injected into a semiconductor tapered amplifier in a master-oscillator power amplifier configuration, producing as much as 500 mW of power with narrow linewidth. The additional linewidth that is due to the tapered amplifier is much smaller than the typical linewidth of grating-stabilized laser diodes. To demonstrate the usefulness of the narrow linewidth and high output power, we used the system to perform Doppler-free two-photon spectroscopy with rubidium. PMID:18285950

  16. 275 W average output power from a femtosecond thin disk oscillator operated in a vacuum environment.

    PubMed

    Saraceno, Clara J; Emaury, Florian; Heckl, Oliver H; Baer, Cyrill R E; Hoffmann, Martin; Schriber, Cinia; Golling, Matthias; Südmeyer, Thomas; Keller, Ursula

    2012-10-01

    We present an ultrafast thin disk laser that generates an average output power of 275 W, which is higher than any other modelocked laser oscillator. It is based on the gain material Yb:YAG and operates at a pulse duration of 583 fs and a repetition rate of 16.3 MHz resulting in a pulse energy of 16.9 μJ and a peak power of 25.6 MW. A SESAM designed for high damage threshold initiated and stabilized soliton modelocking. We reduced the nonlinearity of the atmosphere inside the cavity by several orders of magnitude by operating the oscillator in a vacuum environment. Thus soliton modelocking was achieved at moderate amounts of self-phase modulation and negative group delay dispersion. Our approach opens a new avenue for power scaling femtosecond oscillators to the kW level. PMID:23188316

  17. 100 Hz repetition rate, high average power, plasma-based soft x-ray lasers

    NASA Astrophysics Data System (ADS)

    Reagan, Brendan; Wernsing, Keith; Baumgarten, Cory; Berrill, Mark; Durivage, Leon; Furch, Federico; Curtis, Alden; Luther, Bradley; Patel, Dinesh; Menoni, Carmen; Shlyaptsev, Vyacheslav; Rocca, Jorge

    2013-10-01

    Numerous applications demand high average power / high repetition rate compact sources of coherent soft x-ray radiation. We report the demonstration table-top soft x-ray lasers at wavelengths ranging from 10.9 nm to 18.9 nm from plasmas created at 100 Hz repetition rate. Results includes a record average power of 0.15 mW at λ = 18.9 nm from a laser-produced Mo plasma and 0.1 mW average power at λ = 13.9 nm from a Ag plasma. These soft x-ray lasers are driven by collisional electron impact excitation in elongated line focus plasmas a few mm in length heated by a compact, directly diode-pumped, chirped pulse amplification Yb:YAG laser that produces 1 J pulses of ps duration at 100 Hz repetition rate. Pulses from this laser irradiate the surface of polished metal targets producing transient population inversions on the 4d1S0 --> 4p1P1 transition of Ni-like ions. Tailoring of the temporal profile of the driver laser pulse is observed to significantly increase soft x-ray laser output power as well as allow the generation of shorter wavelength lasers with reduced pump energy. Work was supported by the NSF ERC for Extreme Ultraviolet Science and Technology using equipment developed under NSF Award MRI-ARRA 09-561, and by the AMOS program of the Office of Basic Energy Sciences, US Department of Energy.

  18. A technique for optimizing the design of power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Schlegel, E. S.

    1976-01-01

    A technique is described that provides a basis for predicting whether any device design change will improve or degrade the unavoidable trade-off that must be made between the conduction loss and the turn-off speed of fast-switching high-power thyristors. The technique makes use of a previously reported method by which, for a given design, this trade-off was determined for a wide range of carrier lifetimes. It is shown that by extending this technique, one can predict how other design variables affect this trade-off. The results show that for relatively slow devices the design can be changed to decrease the current gains to improve the turn-off time without significantly degrading the losses. On the other hand, for devices having fast turn-off times design changes can be made to increase the current gain to decrease the losses without a proportionate increase in the turn-off time. Physical explanations for these results are proposed.

  19. Generation of 1.5 W average power, 18 kHz repetition rate coherent mid-ultraviolet radiation at 271.2 nm.

    PubMed

    Biswal, Ramakanta; Agrawal, Praveen K; Dixit, Sudhir K; Nakhe, Shankar V

    2015-11-10

    This paper presents to our knowledge a first time study on the generation of 1.5 W average power, 18 kHz repetition rate coherent mid-ultraviolet (UV) radiation at 271.2 nm. The work is based on frequency summing of coherent green (G: 510.6 nm) and yellow (Y: 578.2 nm) radiations of a copper-HBr laser in a β-barium borate crystal. Average and peak sum frequency conversion efficiencies of about 13% and 16%, respectively, are obtained. The sum frequency results are experimentally analyzed in terms of the extent of matching of green and yellow pump radiations in space, time, and frequency domains. The result is of high significance for many applications in photonics components fabrication, semiconductor technology, and spectroscopy. PMID:26560794

  20. Accelerated Aging System for Prognostics of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Celaya, Jose R.; Vashchenko, Vladislav; Wysocki, Philip; Saha, Sankalita

    2010-01-01

    Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

  1. Application of Bayesian model averaging to measurements of the primordial power spectrum

    SciTech Connect

    Parkinson, David; Liddle, Andrew R.

    2010-11-15

    Cosmological parameter uncertainties are often stated assuming a particular model, neglecting the model uncertainty, even when Bayesian model selection is unable to identify a conclusive best model. Bayesian model averaging is a method for assessing parameter uncertainties in situations where there is also uncertainty in the underlying model. We apply model averaging to the estimation of the parameters associated with the primordial power spectra of curvature and tensor perturbations. We use CosmoNest and MultiNest to compute the model evidences and posteriors, using cosmic microwave data from WMAP, ACBAR, BOOMERanG, and CBI, plus large-scale structure data from the SDSS DR7. We find that the model-averaged 95% credible interval for the spectral index using all of the data is 0.940averaging can tighten the credible upper limit, depending on prior assumptions.

  2. High-throughput machining using high average power ultrashort pulse lasers and ultrafast polygon scanner

    NASA Astrophysics Data System (ADS)

    Schille, Joerg; Schneider, Lutz; Streek, André; Kloetzer, Sascha; Loeschner, Udo

    2016-03-01

    In this paper, high-throughput ultrashort pulse laser machining is investigated on various industrial grade metals (Aluminium, Copper, Stainless steel) and Al2O3 ceramic at unprecedented processing speeds. This is achieved by using a high pulse repetition frequency picosecond laser with maximum average output power of 270 W in conjunction with a unique, in-house developed two-axis polygon scanner. Initially, different concepts of polygon scanners are engineered and tested to find out the optimal architecture for ultrafast and precision laser beam scanning. Remarkable 1,000 m/s scan speed is achieved on the substrate, and thanks to the resulting low pulse overlap, thermal accumulation and plasma absorption effects are avoided at up to 20 MHz pulse repetition frequencies. In order to identify optimum processing conditions for efficient high-average power laser machining, the depths of cavities produced under varied parameter settings are analyzed and, from the results obtained, the characteristic removal values are specified. The maximum removal rate is achieved as high as 27.8 mm3/min for Aluminium, 21.4 mm3/min for Copper, 15.3 mm3/min for Stainless steel and 129.1 mm3/min for Al2O3 when full available laser power is irradiated at optimum pulse repetition frequency.

  3. Experimental studies of high average power CO2-laser-induced thermomechanical processes

    NASA Astrophysics Data System (ADS)

    Hugenschmidt, Manfred

    1990-04-01

    Pulsed high average power CO2 lasers allow for a most efficient conversion of coherence IR laser radiation into thermal and mechanical energies. Investigations using a specially developed repetitively pulsed high energy CO2 laser are presented. This powerful device provides mean powers of several kW and peak powers of the individual pulses in the multi-MW range. Studies were performed to obtain information on the transient behavior of the fast energy transfer mechanisms that occur at peak power densities near or above the surface plasma ignition thresholds. As shown, these plasma waves are periodically building up, expanding and recombining during the short time intervals between subsequent pulses, even in the case of the highest repetition rates that are presently limited to 100 Hz. Besides the efficient thermal energy transfer through plasma enhanced thermal coupling mechanisms, the simultaneously induced mechanical pressure waves are providing an additional impulsive loading of the targets. These pressures were investigated by using PVDF gauges. The experiments reveal that these effects are also responsible for improvements, concerning the energy balance, in most manufacturing processes such as in cutting or in drilling, where these fast thermomechanically coupled processes, for example, contribute to increase the mass removal rates.

  4. Experimental studies of high-average-power pulsed CO2-laser-induced thermomechanical processes

    NASA Astrophysics Data System (ADS)

    Hugenschmidt, Manfred

    1990-10-01

    Pulsed high average power C02-lasers allow for a most efficient conversion of coherent IR-laser radiation into thermal and mechanical energies. This paper is concerned with investigations using a specially developed repetitively pulsed high energy C02-laser. This powerful device provides mean powers of several kW and peak powers of the individual pulses in the multi-MW range. Studies were performed to obtain information on the transient behaviour of the fast energy transfer mechanisms that occur at peak power densities near or above the surface plasma ignition thresholds. As shown, these plasma waves are periodically building up, expanding and recombining during the short time intervals between subsequent pulses, even in case of the highest repetition rates that are presently limited to 100 Hz. Besides the efficient thermal energy transfer through plasma-enhanced thermal coupling mechanisms, the simultaneously induced mechanical pressure waves are providing an additional impulsive loading of the targets. These pressures were investigated by using PVDF gauges. The experiments reveal that these effects too are responsible for improvements, concerning the energy balance, in most manufacturing processes such as in cutting or in drilling, where these fast thermo-mechanically coupled processes, for example, contribute to increase the mass removal rates.

  5. The influence of seat configuration on maximal average crank power during pedaling: a simulation study.

    PubMed

    Rankin, Jeffery W; Neptune, Richard R

    2010-11-01

    Manipulating seat configuration (i.e., seat tube angle, seat height and pelvic orientation) alters the bicycle-rider geometry, which influences lower extremity muscle kinematics and ultimately muscle force and power generation during pedaling. Previous studies have sought to identify the optimal configuration, but isolating the effects of specific variables on rider performance from the confounding effect of rider adaptation makes such studies challenging. Of particular interest is the influence of seat tube angle on rider performance, as seat tube angle varies across riding disciplines (e.g., road racers vs. triathletes). The goals of the current study were to use muscle-actuated forward dynamics simulations of pedaling to 1) identify the overall optimal seat configuration that produces maximum crank power and 2) systematically vary seat tube angle to assess how it influences maximum crank power. The simulations showed that a seat height of 0.76 m (or 102% greater than trochanter height), seat tube angle of 85.1 deg, and pelvic orientation of 20.5 deg placed the major power-producing muscles on more favorable regions of the intrinsic force-length-velocity relationships to generate a maximum average crank power of 981 W. However, seat tube angle had little influence on crank power, with maximal values varying at most by 1% across a wide range of seat tube angles (65 to 110 deg). The similar power values across the wide range of seat tube angles were the result of nearly identical joint kinematics, which occurred using a similar optimal seat height and pelvic orientation while systematically shifting the pedal angle with increasing seat tube angles. PMID:21245509

  6. Cryogenic Yb:YAG composite-thin-disk for high energy and average power amplifiers.

    PubMed

    Zapata, Luis E; Lin, Hua; Calendron, Anne-Laure; Cankaya, Huseyin; Hemmer, Michael; Reichert, Fabian; Huang, W Ronny; Granados, Eduardo; Hong, Kyung-Han; Kärtner, Franz X

    2015-06-01

    A cryogenic composite-thin-disk amplifier with amplified spontaneous emission (ASE) rejection is implemented that overcomes traditional laser system problems in high-energy pulsed laser drivers of high average power. A small signal gain of 8 dB was compared to a 1.5 dB gain for an uncapped thin-disk without ASE mitigation under identical pumping conditions. A strict image relayed 12-pass architecture using an off-axis vacuum telescope and polarization switching extracted 100 mJ at 250 Hz in high beam quality stretched 700 ps pulses of 0.6-nm bandwidth. PMID:26030570

  7. High Average Power Laser Gain Medium With Low Optical Distortion Using A Transverse Flowing Liquid Host

    DOEpatents

    Comaskey, Brian J.; Ault, Earl R.; Kuklo, Thomas C.

    2005-07-05

    A high average power, low optical distortion laser gain media is based on a flowing liquid media. A diode laser pumping device with tailored irradiance excites the laser active atom, ion or molecule within the liquid media. A laser active component of the liquid media exhibits energy storage times longer than or comparable to the thermal optical response time of the liquid. A circulation system that provides a closed loop for mixing and circulating the lasing liquid into and out of the optical cavity includes a pump, a diffuser, and a heat exchanger. A liquid flow gain cell includes flow straighteners and flow channel compression.

  8. Laser properties of an improved average-power Nd-doped phosphate glass

    NASA Astrophysics Data System (ADS)

    Payne, Stephen A.; Marshall, Christopher D.; Bayramian, Andy J.; Wilke, Gary D.; Hayden, Joseph S.

    1994-10-01

    The Nd-doped phosphate laser glass described herein can withstand 2.3 times greater thermal loading without fracture, compared to APG-1 (commercially available average-power glass from Schott Glass Technologies). The enhanced thermal loading capability is established on the basis of the intrinsic thermomechanical properties (expansion, conduction, fracture toughness, and Young's modulus), and by direct thermally induced fracture experiments using Ar-ion laser heating of the samples. This Nd-doped phosphate glass (referred to as APG-t) is found to be characterized by a 29% gain cross section and a 25% longer low-concentration emission lifetime.

  9. ICAN as a new laser paradigm for high energy, high average power femtosecond pulses

    NASA Astrophysics Data System (ADS)

    Brocklesby, W. S.; Nilsson, J.; Schreiber, T.; Limpert, J.; Brignon, A.; Bourderionnet, J.; Lombard, L.; Michau, V.; Hanna, M.; Zaouter, Y.; Tajima, T.; Mourou, Gérard

    2014-05-01

    The application of petawatt lasers to scientific and technological problems is advancing rapidly. The usefulness of these applications will depend on being able to produce petawatt pulses at much higher repetition rates than is presently possible. The International Coherent Amplification Network (ICAN) consortium seeks to design high repetition rate petawatt lasers using large scale coherent beam combination of femtosecond pulse amplifiers built from optical fibres. This combination of technologies has the potential to overcome many of the hurdles to high energy, high average power pulsed lasers, opening up applications and meeting societal challenges.

  10. Yttrium Calcium Oxyborate for high average power frequency doubling and OPCPA

    SciTech Connect

    Liao, Z M; Jovanovic, I; Ebbers, C A; Bayramian, A; Schaffers, K; Caird, J; Bibeau, C; Barty, C J; Fei, Y; Chai, B

    2006-06-20

    Significant progress has been achieved recently in the growth of Yttrium Calcium Oxyborate (YCOB) crystals. Boules have been grown capable of producing large aperture nonlinear crystal plates suitable for high average power frequency conversion or optical parametric chirped pulse amplification (OPCPA). With a large aperture (5.5 cm x 8.5 cm) YCOB crystal we have demonstrated a record 227 W of 523.5nm light (22.7 J/pulse, 10 Hz, 14 ns). We have also demonstrated the applicability of YCOB for 1053 nm OPCPA.

  11. Method and system for modulation of gain suppression in high average power laser systems

    DOEpatents

    Bayramian, Andrew James

    2012-07-31

    A high average power laser system with modulated gain suppression includes an input aperture associated with a first laser beam extraction path and an output aperture associated with the first laser beam extraction path. The system also includes a pinhole creation laser having an optical output directed along a pinhole creation path and an absorbing material positioned along both the first laser beam extraction path and the pinhole creation path. The system further includes a mechanism operable to translate the absorbing material in a direction crossing the first laser beam extraction laser path and a controller operable to modulate the second laser beam.

  12. New generation of high average power industry grade ultrafast ytterbium fiber lasers

    NASA Astrophysics Data System (ADS)

    Yusim, Alex; Samartsev, Igor; Shkurikhin, Oleg; Myasnikov, Daniil; Bordenyuk, Andrey; Platonov, Nikolai; Kancharla, Vijay; Gapontsev, Valentin

    2016-03-01

    We report an industrial grade picosecond and femtosecond pulse Yb fiber lasers with >100 μJ pulse energy and hundreds of Watts of average power for improved laser machining speed of sapphire and glass. This highly efficient laser offers >25% wall plug efficiency within a compact 3U rack-mountable configuration plus a long >2m fiber delivery cable. Reconfigurable features such as controllable repetition rate, fine pulse duration control, burst mode operation and adjustable pulse energy permit the customer to tailor the laser to their application.

  13. Specification of optical components for a high average-power laser environment

    SciTech Connect

    Taylor, J.R.; Chow, R.; Rinmdahl, K.A.; Willis, J.B.; Wong, J.N.

    1997-06-25

    Optical component specifications for the high-average-power lasers and transport system used in the Atomic Vapor Laser Isotope Separation (AVLIS) plant must address demanding system performance requirements. The need for high performance optics has to be balanced against the practical desire to reduce the supply risks of cost and schedule. This is addressed in optical system design, careful planning with the optical industry, demonstration of plant quality parts, qualification of optical suppliers and processes, comprehensive procedures for evaluation and test, and a plan for corrective action.

  14. Full Rank Solutions for the MIMO Gaussian Wiretap Channel With an Average Power Constraint

    NASA Astrophysics Data System (ADS)

    Fakoorian, S. Ali. A.; Swindlehurst, A. Lee

    2013-05-01

    This paper considers a multiple-input multiple-output (MIMO) Gaussian wiretap channel model, where there exists a transmitter, a legitimate receiver and an eavesdropper, each equipped with multiple antennas. In this paper, we first revisit the rank property of the optimal input covariance matrix that achieves the secrecy capacity of the multiple antenna MIMO Gaussian wiretap channel under the average power constraint. Next, we obtain necessary and sufficient conditions on the MIMO wiretap channel parameters such that the optimal input covariance matrix is full-rank, and we fully characterize the resulting covariance matrix as well. Numerical results are presented to illustrate the proposed theoretical findings.

  15. A High-Average-Power Free Electron Laser for Microfabrication and Surface Applications

    NASA Technical Reports Server (NTRS)

    Dylla, H. F.; Benson, S.; Bisognano, J.; Bohn, C. L.; Cardman, L.; Engwall, D.; Fugitt, J.; Jordan, K.; Kehne, D.; Li, Z.; Liu, H.; Merminga, L.; Neil, G. R.; Neuffer, D.; Shinn, M.; Sinclair, C.; Wiseman, M.; Brillson, L. J.; Henkel, D. P.; Helvajian, H.; Kelley, M. J.; Nair, Shanti

    1995-01-01

    CEBAF has developed a comprehensive conceptual design of an industrial user facility based on a kilowatt ultraviolet (UV) (160-1000 mm) and infrared (IR) (2-25 micron) free electron laser (FEL) driven by a recirculating, energy recovering 200 MeV superconducting radio frequency (SRF) accelerator. FEL users, CEBAF's partners in the Lase Processing Consortium, including AT&T, DuPont, IBM, Northrop Grumman, 3M, and Xerox, are developing applications such as metal, ceramic, and electronic material micro-fabrication and polymer and metal surface processing, with the overall effort leading to later scale-up to industrial systems at 50-100 kW. Representative applications are described. The proposed high-average-power FEL overcomes limitations of conventional laser sources in available power, cost-effectiveness, tunability, and pulse structure.

  16. High average power pulsed phase conjugate laser with birefringence correction. Revision 1

    SciTech Connect

    Bowers, M.W.; Hankla, A.K.; Jacobson, G.F.

    1994-05-01

    Nd:YAG rod lasers have been plagued with the inability to go to high average powers because of thermally induced birefringence and focusing. Several methods have been employed to correct for the birefringence and the thermal aberrations of such systems, but place stringent constraints on the laser heads and/or the system alignment. They have developed a scalable Nd: YAG master oscillator/power amplifier (MOPA) laser system which employs a novel phase conjugation scheme to correct both for the material and thermal distortions as well as the thermal birefringence in double pass amplifier systems. This method reduces the double pass depolarization from 42% to less than 2% and is easy to align.

  17. High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.

    PubMed

    Härkönen, Antti; Rautiainen, Jussi; Guina, Mircea; Konttinen, Janne; Tuomisto, Pietari; Orsila, Lasse; Pessa, Markus; Okhotnikov, Oleg G

    2007-03-19

    We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity. PMID:19532562

  18. The ETA-II induction linac as a high-average-power FEL driver

    NASA Astrophysics Data System (ADS)

    Nexsen, W. E.; Atkinson, D. P.; Barrett, D. M.; Chen, Y.-J.; Clark, J. C.; Griffith, L. V.; Kirbie, H. C.; Newton, M. A.; Paul, A. C.; Sampayan, S.; Throop, A. L.; Turner, W. C.

    1990-10-01

    The Experimental Test Accelerator II (ETA-II) is the first induction linac designed specifically to FEL requirements. It is primarily intended to demonstrate induction accelerator technology for high-average-power, high-brightness electron beams, and will be used to drive a 140 and 250 GHz microwave FEL for plasma heating experiments in the Microwave Tokamak Experiment (MTX) at LLNL. Its features include high-vacuum design which allows the use of an intrinsically bright dispenser cathode, induction cells designed to minimize BBU growth rate, and careful attention to magnetic alignment to minimize radial sweep due to beam corkscrew. The use of magnetic switches allows high-average-power operation. At present ETA-II is being used to drive 140 GHz plasma heating experiments. These experiments require nominal beam parameters of 6 MeV energy, 2 kA current, 20 ns pulse width and a brightness of 1 × 108 A/(m rad)2 at the wiggler with a pulse repetition frequency (prf) of 0.5 Hz. Future 250 GHz experiments require beam parameters of 10 MeV energy, 3 kA current, 50 ns pulse width and a brightness of 1 × 108 A/(m rad)2 with a 5 kHz prf for 0.5 s. In this paper we discuss the present status of ETA-II parameters and the phased development program necessary to satisfy these future requirements.

  19. Power scalable semiconductor disk lasers for frequency conversion and mode-locking

    SciTech Connect

    Okhotnikov, O G

    2008-12-31

    The semiconductor disk laser, a relatively novel type of light oscillators, is now under intensive development. These lasers produce an excellent beam quality in conjunction with a scalable output power. This paper presents recent achievements in power scalability, mode-locking and frequency conversion with optically-pumped semiconductor disk lasers. A novel concept for power scaling described here allows the thermal load of the gain material to be reduced, increasing the threshold of rollover and extending the capability for boosting the output power without degradation in the beam quality. The proposed technique is based on the multiple gain scheme. The total power of over 8 W was achieved in dual-gain configuration, while one-gain lasers could produce separately up to 4 W, limited by the thermal rollover of the output characteristics. The results show that the reduced thermal load to a gain element in a dual-gain cavity allows extending the range of usable pump powers boosting the laser output. Orange-red radiation required for a number of challenging applications can be produced through frequency-doubling using a GaInNAs/GaAs laser. Using such a disk laser operating at a fundamental wavelength of 1224 nm, we demonstrate an output power of 2.68 W in the visible region with an optical-to-optical conversion efficiency of 7.4%. The frequency-converted signal could be launched into a single-mode optical fibre with 70%-78% coupling efficiency, demonstrating good beam quality for the visible radiation. Using a Fabry-Perot glass etalon, the emission wavelength could be tuned over an 8-nm spectral range. We report on optically-pumped disk lasers passively mode-locked with a semiconductor saturable-absorber mirror. The potential of harmonic mode-locking in producing pulse trains at multigigahertz repetition rates has been explored. The mode-locked disk laser is investigated for different designs of the gain medium that allow bistable mode-locking to be controlled. An

  20. Green sub-ps laser exceeding 400 W of average power

    NASA Astrophysics Data System (ADS)

    Gronloh, Bastian; Russbueldt, Peter; Jungbluth, Bernd; Hoffmann, Hans-Dieter

    2014-02-01

    We present the world's first laser at 515 nm with sub-picosecond pulses and an average power of 445 W. To realize this beam source we utilize an Yb:YAG-based infrared laser consisting of a fiber MOPA system as a seed source, a rod-type pre-amplifier and two Innoslab power amplifier stages. The infrared system delivers up to 930 W of average power at repetition rates between 10 and 50 MHz and with pulse durations around 800 fs. The beam quality in the infrared is M² = 1.1 and 1.5 in fast and slow axis. As a frequency doubler we chose a Type-I critically phase-matched Lithium Triborate (LBO) crystal in a single-pass configuration. To preserve the infrared beam quality and pulse duration, the conversion was carefully modeled using numerical calculations. These take dispersion-related and thermal effects into account, thus enabling us to provide precise predictions of the properties of the frequency-doubled beam. To be able to model the influence of thermal dephasing correctly and to choose appropriate crystals accordingly, we performed extensive absorption measurements of all crystals used for conversion experiments. These measurements provide the input data for the thermal FEM analysis and calculation. We used a Photothermal Commonpath Interferometer (PCI) to obtain space-resolved absorption data in the bulk and at the surfaces of the LBO crystals. The absorption was measured at 1030 nm as well as at 515 nm in order to take into account the different absorption behavior at both occurring wavelengths.

  1. Yb3+ doped ribbon fiber for high-average power lasers and amplifiers

    NASA Astrophysics Data System (ADS)

    Drachenberg, Derrek R.; Messerly, Michael J.; Pax, Paul H.; Sridharan, Arun K.; Tassano, John B.; Dawson, Jay W.

    2014-03-01

    Diffraction-limited high power lasers in the region of 10s of kW to greater than 100 kW are needed for defense, manufacturing and future science applications. A balance of thermal lensing and Stimulated Brillouin Scattering (SBS) for narrowband amplifiers and Stimulated Raman Scattering (SRS) for broadband amplifiers is likely to limit the average power of circular core fiber amplifiers to 2 kW (narrowband) or 36 kW (broadband). A ribbon fiber, which has a rectangular core, operating in a high order mode can overcome these obstacles by increasing mode area without becoming thermal lens limited and without the on-axis intensity peak associated with circular high order modes. High order ribbon fiber modes can also be converted to a fundamental Gaussian mode with high efficiency for applications in which this is necessary. We present an Yb-doped, air clad, optical fiber having an elongated, ribbon-like core having an effective mode area of area of 600 μm² and an aspect ratio of 13:1. As an amplifier, the fiber produced 50% slope efficiency and a seed-limited power of 10.5 W, a gain of 24 dB. As an oscillator, the fiber produced multimode power above 40 W with 71% slope efficiency and single mode power above 5 W with 44% slope efficiency. The multimode M2 beam quality factor of the fiber was 1.6 in the narrow dimension and 15 in the wide dimension.

  2. A picosecond thin-rod Yb:YAG regenerative laser amplifier with the high average power of 20 W

    NASA Astrophysics Data System (ADS)

    Matsubara, S.; Tanaka, M.; Takama, M.; Hitotsuya, H.; Kobayashi, T.; Kawato, S.

    2013-05-01

    A high-average-power, laser-diode-pumped, picosecond-pulse regenerative amplifier was developed using the thin-rod Yb:YAG (yttrium aluminum garnet) laser architecture. This architecture has a complete set of favorable properties for the cost-effective, high-average-power, and high-peak-power lasers. These include low amplified spontaneous emission with high gain and high repetition rate. For the amplifier system, an average output power of 20 W was achieved at a pulse repetition rate of 100 kHz, which corresponds to an output pulse energy of 200 μJ with an output pulse width of 2 ps.

  3. Thermally induced distortion of high average power laser system by an optical transport system

    SciTech Connect

    Ault, L; Chow, R; Taylor, Jedlovec, D

    1999-03-31

    The atomic vapor laser isotope separation process uses high-average power lasers that have the commercial potential to enrich uranium for the electric power utilities. The transport of the laser beam through the laser system to the separation chambers requires high performance optical components, most of which have either fused silica or Zerodur as the substrate material. One of the requirements of the optical components is to preserve the wavefront quality of the laser beam that propagate over long distances. Full aperture tests with the high power process lasers and finite element analysis (FEA) have been performed on the transport optics. The wavefront distortions of the various sections of the transport path were measured with diagnostic Hartmann sensor packages. The FEA results were derived from an in-house thermal-structural-optical code which is linked to the commercially available CodeV program. In comparing the measured and predicted results, the bulk absorptance of fused silica was estimated to about 50 ppm/cm in the visible wavelength regime. Wavefront distortions are reported on optics made from fused silica and Zerodur substrate materials.

  4. 1KHz high average power single-frequency Nd:YAG laser

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaolei; Ma, Xiuhua; Li, Shiguang; Chen, Weibiao

    2015-02-01

    A laser-diode-pumped master oscillator and power amplifier was developed with high efficiency, high average power and high beam quality. The oscillator is an injection-seeding, fiber coupled diode-end-pumped E-O Q-switched Nd:YAG laser, producing single frequency pulse laser output with pulse energy of 8mJ and pulse width of 11ns at a pulse repetition rate of 1KHz,The 1KHz was divided into four chains with frequency of 250Hz, through E-O modulation technology, The power amplifier utilizes conductively-cooling Nd:YAG zigzag slab with two sides' pump architecture at bounce point. Pulse energy of more than 800mJ with pulse widths of 12.6ns was obtained at repetition rate of 250Hz in every amplifier chain, the frequency-doubled pulse energy of 360mJ when KTP crystal was used was obtained at a repetition of 250Hz.

  5. Non-Invasive Beam Detection in a High-Average Power Electron Accelerator

    NASA Astrophysics Data System (ADS)

    Williams, Joel; Biedron, Sandra; Harris, John; Martinez, Jorge; Milton, Stephen; Benson, S.; Evtushenko, P.; Neil, G.; Zhang, S.

    2014-03-01

    For a free-electron laser (FEL) to work effectively the electron beam quality must meet exceptional standards. In the case of an FEL operating at infrared wavelengths the critical phase space tends to be in the longitudinal direction. Achieving high enough longitudinal phase space density directly from the electron injector system in an FEL is difficult due to space charge effects, thus one needs to manipulate the longitudinal phase space once the beam energy reaches a sufficiently high value. However, this is fraught with problems. Longitudinal space charge and coherent synchrotron radiation can both disrupt the overall phase space, furthermore, the phase space disruption is exacerbated by the longitudinal phase space manipulation process required to achieve high peak current. To achieve and maintain good FEL performance, one needs to investigate the longitudinal emittance during operation, preferably in a non-invasive manner. Using electro-optical (EO) methods, we plan to measure the bunch longitudinal profile of an energy (~120-MeV), high-power (~10 kW or more average FEL output power) beam. Such a diagnostic could be critical in efforts to diagnose and help mitigate deleterious beam effects for high output power FELs.

  6. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  7. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    SciTech Connect

    Schwarze, G.E.; Frasca, A.J.

    1994-09-01

    The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10{sup 13} n/cm {sup 2} and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  8. Adaptive Control for Buck Power Converter Using Fixed Point Inducting Control and Zero Average Dynamics Strategies

    NASA Astrophysics Data System (ADS)

    Hoyos Velasco, Fredy Edimer; García, Nicolás Toro; Garcés Gómez, Yeison Alberto

    In this paper, the output voltage of a buck power converter is controlled by means of a quasi-sliding scheme. The Fixed Point Inducting Control (FPIC) technique is used for the control design, based on the Zero Average Dynamics (ZAD) strategy, including load estimation by means of the Least Mean Squares (LMS) method. The control scheme is tested in a Rapid Control Prototyping (RCP) system based on Digital Signal Processing (DSP) for dSPACE platform. The closed loop system shows adequate performance. The experimental and simulation results match. The main contribution of this paper is to introduce the load estimator by means of LMS, to make ZAD and FPIC control feasible in load variation conditions. In addition, comparison results for controlled buck converter with SMC, PID and ZAD-FPIC control techniques are shown.

  9. High average power CW FELs (Free Electron Laser) for application to plasma heating: Designs and experiments

    SciTech Connect

    Booske, J.H.; Granatstein, V.L.; Radack, D.J.; Antonsen, T.M. Jr.; Bidwell, S.; Carmel, Y.; Destler, W.W.; Latham, P.E.; Levush, B.; Mayergoyz, I.D.; Zhang, Z.X. . Lab. for Plasma Research); Freund, H.P. )

    1989-01-01

    A short period wiggler (period {approximately} 1 cm), sheet beam FEL has been proposed as a low-cost source of high average power (1 MW) millimeter-wave radiation for plasma heating and space-based radar applications. Recent calculation and experiments have confirmed the feasibility of this concept in such critical areas as rf wall heating, intercepted beam ( body'') current, and high voltage (0.5 - 1 MV) sheet beam generation and propagation. Results of preliminary low-gain sheet beam FEL oscillator experiments using a field emission diode and pulse line accelerator have verified that lasing occurs at the predicted FEL frequency. Measured start oscillation currents also appear consistent with theoretical estimates. Finally, we consider the possibilities of using a short-period, superconducting planar wiggler for improved beam confinement, as well as access to the high gain, strong pump Compton regime with its potential for highly efficient FEL operation.

  10. Status of HiLASE project: High average power pulsed DPSSL systems for research and industry

    NASA Astrophysics Data System (ADS)

    Mocek, T.; Divoky, M.; Smrz, M.; Sawicka, M.; Chyla, M.; Sikocinski, P.; Vohnikova, H.; Severova, P.; Lucianetti, A.; Novak, J.; Rus, B.

    2013-11-01

    We introduce the Czech national R&D project HiLASE which focuses on strategic development of advanced high-repetition rate, diode pumped solid state laser (DPSSL) systems that may find use in research, high-tech industry and in the future European large-scale facilities such as HiPER and ELI. Within HiLASE we explore two major concepts: thin-disk and cryogenically cooled multislab amplifiers capable of delivering average output powers above 1 kW level in picosecond-to-nanosecond pulsed regime. In particular, we have started a programme of technology development to demonstrate the scalability of multislab concept up to the kJ level at repetition rate of 1-10 Hz.

  11. A Method for the Estimation of p-Mode Parameters from Averaged Solar Oscillation Power Spectra

    NASA Astrophysics Data System (ADS)

    Reiter, J.; Rhodes, E. J., Jr.; Kosovichev, A. G.; Schou, J.; Scherrer, P. H.; Larson, T. P.

    2015-04-01

    A new fitting methodology is presented that is equally well suited for the estimation of low-, medium-, and high-degree mode parameters from m-averaged solar oscillation power spectra of widely differing spectral resolution. This method, which we call the “Windowed, MuLTiple-Peak, averaged-spectrum” or WMLTP Method, constructs a theoretical profile by convolving the weighted sum of the profiles of the modes appearing in the fitting box with the power spectrum of the window function of the observing run, using weights from a leakage matrix that takes into account observational and physical effects, such as the distortion of modes by solar latitudinal differential rotation. We demonstrate that the WMLTP Method makes substantial improvements in the inferences of the properties of the solar oscillations in comparison with a previous method, which employed a single profile to represent each spectral peak. We also present an inversion for the internal solar structure, which is based upon 6366 modes that we computed using the WMLTP method on the 66 day 2010 Solar and Heliospheric Observatory/MDI Dynamics Run. To improve both the numerical stability and reliability of the inversion, we developed a new procedure for the identification and correction of outliers in a frequency dataset. We present evidence for a pronounced departure of the sound speed in the outer half of the solar convection zone and in the subsurface shear layer from the radial sound speed profile contained in Model S of Christensen-Dalsgaard and his collaborators that existed in the rising phase of Solar Cycle 24 during mid-2010.

  12. Towards high power flip-chip long-wavelength semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Rantamaki, A.; Saarinen, E.; Lyytikäinen, J.; Kontio, J.; Heikkinen, J.; Lahtonen, K.; Valden, M.; Okhotnikov, O.

    2015-03-01

    Optically pumped semiconductor disk lasers (SDLs) are presented with emphasis on wafer bonding InP-based active regions with GaAs-based distributed Bragg reflectors (DBRs) and reducing the number of required layer pairs in the DBR. The wafer bonding is performed at a relatively low temperature of 200 °C utilizing transparent intermediate bonding layers. The reflectivity of the semiconductor DBR section is enhanced by finishing the DBR with a thin low refractive index layer and a highly reflecting metal layer. Such a design enables considerably thinner mirror structures than the conventional design, where the semiconductor DBR is finished with mere metal layers. In addition, a 90 nm thick Al2O3 layer is shown to produce negligible increase in the thermal resistance of the SDL. Furthermore, a flip-chip SDL with a GaAs/AlAs-Al2O3-Al mirror is demonstrated with watt-level output power at the wavelength of 1.32 μm. The properties and future improvement issues for flip-chip SDLs emitting at 1.3-1.6 μm are also discussed.

  13. Wavefront control in high average-power multi-slab laser system

    NASA Astrophysics Data System (ADS)

    Pilar, Jan; Bonora, Stefano; Divoky, Martin; Phillips, Jonathan; Smith, Jodie; Ertel, Klaus; Collier, John; Jelinkova, Helena; Lucianetti, Antonio; Mocek, TomáÅ.¡

    2015-03-01

    A high average power cryogenically-cooled diode-pumped solid-state laser system for Hilase centre in Czech Republic is being developed by Central Laser Facility at Rutherford Appleton Laboratory, England in collaboration with Hilase team. The system will deliver pulses with energy of 100 J at 10 Hz repetition rate and will find applications in research and industry. The laser medium and other elements of the system are subject to heavy thermal loading which causes serious optical aberrations and degrade the output beam quality. To meet the stringent laser requirements of this kWclass laser, it is necessary to implement adaptive optics system, which will correct for these aberrations. During our research the sources of aberrations have been identified and analyzed. Based on this analysis, a suitable adaptive optics system was proposed. After finalizing numerical models, simulations and optimizations, the adaptive optics system was developed, characterized and installed in a cryogenically-cooled multi-slab laser system running up to 6 J and 10 Hz. The adaptive optics system consists of 6x6 actuator bimorph deformable mirror and wavefront sensor based on quadriwave lateral shearing interferometry operated in closed loop. The functionality of the system was demonstrated at full power.

  14. 800-keV Electron Induction Injector with High Average Power

    NASA Astrophysics Data System (ADS)

    Mamaev, G. L.; Glazov, A. I.; Krasnopolsky, V. A.; Latypov, T. A.; Mamaev, S. L.; Puchkov, S. N.; Shcherbakov, A. M.; Tenyakov, I. E.; Terechkin, Y. M.; Vlasenko, S. I.

    1997-05-01

    Design parameters of the induction injector are 800 keV beam energy, 2...5 kA current, 80 ns pulse flat top and 100 Hz repetition rate. The average beam power of the series of pulses is 40 kW. The injector modules use metglass cores. The electron source mounted on the stem consists of a 80 mm diameter velvet cathode placed on a field forming electrode. The tapered insulator assembly separates the oil-filled induction modules from the vacuum diode. The magnetic field necessary for beam extraction is generated by two magntic cores. 150 kV, 40 kA, 100 ns, 100 Hz pulse generator has been designed in Radiotechnical institute. The generator is a two-stage magnetic power compressor with a thyratron switch. The voltage pulse is produced by the water-filled pulse forming line (PFL) with the impedance of 3.3 ohm. The calculated parameters of the injector, the design features of its modules and the experimental results of their testing are presented.

  15. Procedure for pressure contact on high-power semiconductor devices free of thermal fatigue

    NASA Technical Reports Server (NTRS)

    Knobloch, J.

    1979-01-01

    To eliminate thermal fatigue, a procedure for manufacturing semiconductor power devices with pure pressure contact without solid binding was developed. Pressure contact without the use of a solid binding to avoid a limitation of the maximum surface in the contact was examined. A silicon wafer covered with a relatively thick metal layer is imbedded with the aid of a soft silver foil between two identically sized hard contact discs (molybdenum or tungsten) which are rotationally symmetrical. The advantages of this concept are shown for large diameters. The pressure contact was tested successfully in many devices in a large variety of applications.

  16. Theoretical and experimental analysis of high-power frequency-stabilized semiconductor master oscillator power-amplifier system.

    PubMed

    Ji, Encai; Liu, Qiang; Nie, Mingming; Fu, Xing; Gong, Mali

    2016-04-10

    We present a compact high-power 780 nm frequency-stabilized diode laser with a power of as high as 2.825 W, corresponding to an estimated overall efficiency of 38.5%. The tapered amplifier (TPA) gain was about 24.5 dB, which was basically consistent with the simulation results. The beam quality factor was M2<1.72. The core feature of the system was stabilizing the frequency of the narrowband semiconductor TPA system with the matured saturated absorption spectrum technique. The laser frequency was stabilized against mode hops for a period of >4200  s with a frequency fluctuation around 6.7×10-10 within 1 s of the observation period, and the linewidth was no more than 0.95 MHz. The laser performance indicates that the current frequency-stabilized semiconductor laser has great potential in certain conditions that require several watts of output power. PMID:27139853

  17. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-07-01

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed.The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01635h

  18. Novel cavities and functionality in high-power highbrightness semiconductor vertical external cavity surface emitting lasers

    NASA Astrophysics Data System (ADS)

    Hessenius, Chris

    Ever since the first laser demonstration in 1960, applications for laser systems have increased to include diverse fields such as: national defense, biology and medicine, entertainment, imaging, and communications. In order to serve the growing demand, a wide range of laser types including solid-state, semiconductor, gas, and dye lasers have been developed. For most applications it is critical to have lasers with both high optical power and excellent beam quality. This has traditionally been difficult to simultaneously achieve in semiconductor lasers. In the mid 1990's, the advent of an optically pumped semiconductor vertical-external-cavity surface-emitting laser (VECSEL) led to the demonstration of high (multi-watt) output power with near diffraction limited (TEM00) beam quality. Since that time VECSELs covering large wavelength regions have been developed. It is the objective of this dissertation to investigate and explore novel cavity designs which can lead to increased functionality in high power, high brightness VECSELs. Optically pumped VECSELs have previously demonstrated their potential for high power, high brightness operation. In addition, the "open" cavity design of this type of laser makes intracavity nonlinear frequency conversion, linewidth narrowing, and spectral tuning very efficient. By altering the external cavity design it is possible to add additional functionality to this already flexible design. In this dissertation, the history, theory, design, and fabrication are first presented as VECSEL performance relies heavily on the design and fabrication of the chip. Basic cavities such as the linear cavity and v-shaped cavity will be discussed, including the role they play in wavelength tuning, transverse mode profile, and mode stability. The development of a VECSEL for use as a sodium guide star laser is presented including the theory and simulation of intracavity frequency generation in a modified v-cavity. The results show agreement with theory

  19. Industrial applications of high-average power high-peak power nanosecond pulse duration Nd:YAG lasers

    NASA Astrophysics Data System (ADS)

    Harrison, Paul M.; Ellwi, Samir

    2009-02-01

    Within the vast range of laser materials processing applications, every type of successful commercial laser has been driven by a major industrial process. For high average power, high peak power, nanosecond pulse duration Nd:YAG DPSS lasers, the enabling process is high speed surface engineering. This includes applications such as thin film patterning and selective coating removal in markets such as the flat panel displays (FPD), solar and automotive industries. Applications such as these tend to require working spots that have uniform intensity distribution using specific shapes and dimensions, so a range of innovative beam delivery systems have been developed that convert the gaussian beam shape produced by the laser into a range of rectangular and/or shaped spots, as required by demands of each project. In this paper the authors will discuss the key parameters of this type of laser and examine why they are important for high speed surface engineering projects, and how they affect the underlying laser-material interaction and the removal mechanism. Several case studies will be considered in the FPD and solar markets, exploring the close link between the application, the key laser characteristics and the beam delivery system that link these together.

  20. 1 MHz repetition rate hollow fiber pulse compression to sub-100-fs duration at 100 W average power.

    PubMed

    Rothhardt, Jan; Hädrich, Steffen; Carstens, Henning; Herrick, Nicholas; Demmler, Stefan; Limpert, Jens; Tünnermann, Andreas

    2011-12-01

    We report on nonlinear pulse compression at very high average power. A high-power fiber chirped pulse amplification system based on a novel large pitch photonic crystal fiber delivers 700 fs pulses with 200 μJ pulse energy at a 1 MHz repetition rate, resulting in 200 W of average power. Subsequent spectral broadening in a xenon-filled hollow-core fiber and pulse compression with chirped mirrors is employed for pulse shortening and peak power enhancement. For the first time, to our knowledge, more than 100 W of average power are transmitted through a noble-gas-filled hollow fiber. After pulse compression of 81 fs, 93 μJ pulses are obtained at a 1 MHz repetition rate. PMID:22139257

  1. Sub-700fs pulses at 152 W average power from a Tm-doped fiber CPA system

    NASA Astrophysics Data System (ADS)

    Gaida, Christian; Stutzki, Fabian; Gebhardt, Martin; Jansen, Florian; Wienke, Andreas; Zeitner, Uwe D.; Fuchs, Frank; Jauregui, Cesar; Wandt, Dieter; Kracht, Dietmar; Limpert, Jens; Tünnermann, Andreas

    2015-03-01

    Thulium-based fiber lasers potentially provide for the demand of high average-power ultrafast laser systems operating at an emission wavelength around 2 μm. In this work we use a Tm-doped photonic-crystal fiber (PCF) with a mode field diameter of 36 μm enabling high peak powers without the onset of detrimental nonlinear effects. For the first time a Tmdoped PCF amplifier allows for a pump-power limited average output power of 241 W with a slope efficiency above 50%, good beam quality and linear polarization. A record compressed average power of 152 W and a pulse peak power of more than 4 MW at sub-700 fs pulse duration are enabled by dielectric gratings with diffraction efficiencies higher than 98% leading to a total compression efficiency of more than 70%. A further increase of pulse peak power towards the GW-level is planned by employing Tm-doped large-pitch fibers with mode field diameters well above 50 μm. The coherent combination of ultrafast pulses might eventually lead to kW-level average power and multi-GW peak power.

  2. NEO-LISP: Deflecting near-earth objects using high average power, repetitively pulsed lasers

    SciTech Connect

    Phipps, C.R.; Michaelis, M.M.

    1994-10-01

    Several kinds of Near-Earth objects exist for which one would like to cause modest orbit perturbations, but which are inaccessible to normal means of interception because of their number, distance or the lack of early warning. For these objects, LISP (Laser Impulse Space Propulsion) is an appropriate technique for rapidly applying the required mechanical impulse from a ground-based station. In order of increasing laser energy required, examples are: (1) repositioning specially prepared geosynchronous satellites for an enhanced lifetime, (2) causing selected items of space junk to re-enter and burn up in the atmosphere on a computed trajectory, and (3) safely deflecting Earth-directed comet nuclei and earth-crossing asteroids (ECA`s) a few tens of meters in size (the most hazardous size). They will discuss each of these problems in turn and show that each application is best matched by its own matrix of LISP laser pulse width, pulse repetition rate, wavelength and average power. The latter ranges from 100W to 3GW for the cases considered. They will also discuss means of achieving the active beam phase error correction during passage through the atmosphere and very large exit pupil in the optical system which are required in each of these cases.

  3. Development of a High-Average-Power Compton Gamma Source for Lepton Colliders

    SciTech Connect

    Pogorelsky, Igor; Polyanskiy, Mikhail N.; Yakimenko, Vitaliy; Platonenko, Viktor T.

    2009-01-22

    Gamma-({gamma}{sup -}) ray beams of high average power and peak brightness are of demand for a number of applications in high-energy physics, material processing, medicine, etc. One of such examples is gamma conversion into polarized positrons and muons that is under consideration for projected lepton colliders. A {gamma}-source based on the Compton backscattering from the relativistic electron beam is a promising candidate for this application. Our approach to the high-repetition {gamma}-source assumes placing the Compton interaction point inside a CO{sub 2} laser cavity. A laser pulse interacts with periodical electron bunches on each round-trip inside the laser cavity producing the corresponding train of {gamma}-pulses. The round-trip optical losses can be compensated by amplification in the active laser medium. The major challenge for this approach is in maintaining stable amplification rate for a picosecond CO{sub 2}-laser pulse during multiple resonator round-trips without significant deterioration of its temporal and transverse profiles. Addressing this task, we elaborated on a computer code that allows identifying the directions and priorities in the development of such a multi-pass picosecond CO{sub 2} laser. Proof-of-principle experiments help to verify the model and show the viability of the concept. In these tests we demonstrated extended trains of picosecond CO{sub 2} laser pulses circulating inside the cavity that incorporates the Compton interaction point.

  4. Numerical simulation studies of the design and performance of the AFEL for high average power operation

    SciTech Connect

    Goldstein, J.C.; Takeda, H.; Nguyen, D.C.

    1994-10-01

    AFEL (Advanced Free-Electron Laser) at Los Alamos is a compact free-electron laser oscillator which utilizes a very high-brightness electron beam generated by a high gradient linac whose source of electrons is a photocathode injector. This device has been operating, with 15--17 MeV electrons, at optical wavelengths in the 4.5--6.0 {mu}m range, since April of 1993 with a one-centimeter-period, permanent-magnet wiggler which is 24 periods long. The linac produces about 12 {mu}s macropulses at a normal repetition rate of one Hz, while the micropulse repetition rate within a macropulse is 108.33 Mhz which is consistent with the optical cavity length of about 138.5 cm. A program is now underway to upgrade the subsystems of this laser in order to allow it to produce long-time-average optical output powers in the range of 0.1 to 1.0 kW. In this communication, we briefly indicate the details of the equipment upgrades, describe a new high-extraction-efficiency wiggler, and present the results of numerical simulation studies of the design.

  5. Laser properties of a new average-power Nd-doped phosphate glass

    NASA Astrophysics Data System (ADS)

    Payne, S. A.; Marshall, C. D.; Bayramian, A.; Wilke, G. D.; Hayden, J. S.

    1995-09-01

    The Nd-doped phosphate laser glass described herein can withstand 2.3 times greater thermal loading without fracture, compared to APG-1 (commercially available Average-Power Glass from Schott Glass Technologies). The enhanced thermal loading capability is established on the basis of the intrinsic thermomechanical properties (expansion, conduction, fracture toughness, and Young's modulus), and by direct thermally induced fracture experiments using Ar-ion laser heating of the samples. This Nd-doped phosphate glass (referred to as APG-t) is found to be characterized by a 29% lower gain cross section and a 25% longer low-concentration emission lifetime. Other measurements pertaining to the concentration quenching, thermal lensing, and saturation of the extraction are also described in this article. It is note-worthy that APG-t offers increased bandwidth near the peak of the 1054 nm gain spectrum, suggesting that this material may have special utility as a means of generating and amplifying ultrashort pulses of light.

  6. Laser damage of dichroic coatings in a high average power laser vacuum resonator

    SciTech Connect

    Arnold, P A; Berzins, L V; Chow, R; Erbert, G V

    1999-07-28

    In our application, dichroics in a high average power, near-infrared, laser system have short operating lifetimes. These dichroics were used as the resonator fold mirrors and permitted the transmission of the pumping argon (Ar) ion laser light. Representative samples of two different dichroic optics were taken off-line and the transmission performance monitored in various scenarios. Irradiating these optics under resonator vacuum conditions, ({le}1 mT, 11.7 kW/cm{sup 2}, Ar laser running all wavelengths) resulted in a degradation of transmission with time. Irradiating these optics in a rarefied oxygen atmosphere (1 to 10 T of oxygen, 11.7 kW/cm{sup 2}, Ar laser running all wavelengths) the transmission remained steady over a period of days. The transmission loss observed in the optic tested in vacuum was somewhat reversible if the optic was subsequently irradiated in a rarefied oxygen atmosphere. This reversibility was only possible if the transmission degradation was not too severe. Further tests demonstrated that an atmosphere of 10 T of air also prevented the transmission degradation. In addition, tests were performed to demonstrate that the optic damage was not caused by the ultra-violet component in the Ar ion laser. Mechanisms that may account for this behavior are proposed.

  7. Development of a High-Average-Power Compton Gamma Source for Lepton Colliders

    NASA Astrophysics Data System (ADS)

    Pogorelsky, Igor; Polyanskiy, Mikhail N.; Yakimenko, Vitaliy; Platonenko, Viktor T.

    2009-01-01

    Gamma- (γ-) ray beams of high average power and peak brightness are of demand for a number of applications in high-energy physics, material processing, medicine, etc. One of such examples is gamma conversion into polarized positrons and muons that is under consideration for projected lepton colliders. A γ-source based on the Compton backscattering from the relativistic electron beam is a promising candidate for this application. Our approach to the high-repetition γ-source assumes placing the Compton interaction point inside a CO2 laser cavity. A laser pulse interacts with periodical electron bunches on each round-trip inside the laser cavity producing the corresponding train of γ-pulses. The round-trip optical losses can be compensated by amplification in the active laser medium. The major challenge for this approach is in maintaining stable amplification rate for a picosecond CO2-laser pulse during multiple resonator round-trips without significant deterioration of its temporal and transverse profiles. Addressing this task, we elaborated on a computer code that allows identifying the directions and priorities in the development of such a multi-pass picosecond CO2 laser. Proof-of-principle experiments help to verify the model and show the viability of the concept. In these tests we demonstrated extended trains of picosecond CO2 laser pulses circulating inside the cavity that incorporates the Compton interaction point.

  8. Industrial applications of a fiber-based high-average-power picosecond laser

    NASA Astrophysics Data System (ADS)

    Moorhouse, Colin

    2009-02-01

    Presently lasers are well established tools for materials processing due to advantages such as (i) the non-contact nature of the laser-material interaction, (ii) the high precision achievable and (iii) no requirement for high vacuum equipment or costly chemicals. Now, industrial laser users demand improvements in order to achieve higher quality features with reduced heat affected zones and so it is increasingly necessary to use shorter pulse durations. To satisfy these needs, there has been significant research into ultrafast laser technology for decades, however at this time, these lasers have yet to be adopted by industry for mass production. Recent developments have shown that the combination of a fibre seed oscillator and Diode Pumped Solid State (DPSS) amplifying technology can offer high average power, picosecond pulses (~10ps) in an industrially-rugged package. The significant laser design aspects are outlined here, along with the advantages this technology offers for applications such as silicon via drilling, thin film patterning and the machining of wide bandgap materials.

  9. NEO-LISP: Deflecting near-Earth objects using high average power, repetitively pulsed lasers

    NASA Astrophysics Data System (ADS)

    Phipps, C. R.; Michaelis, M. M.

    Several kinds of Near-Earth objects exist for which one would like to cause modest orbit perturbations, but which are inaccessible to normal means of interception because of their number, distance or the lack of early warning. For these objects, LISP (Laser Impulse Space Propulsion) is an appropriate technique for rapidly applying the required mechanical impulse from a ground-based station. In order of increasing laser energy required, examples are: (1) repositioning specially prepared geosynchronous satellites for an enhanced lifetime; (2) causing selected items of space junk to re-enter and burn up in the atmosphere on a computed trajectory; and (3) safely deflecting Earth-directed comet nuclei and earth-crossing asteroids (ECA's) a few tens of meters in size (the most hazardous size). They will discuss each of these problems in turn and show that each application is best matched by its own matrix of LISP laser pulse width, pulse repetition rate, wavelength and average power. The latter ranges from 100W to 3GW for the cases considered. They will also discuss means of achieving the active beam phase error correction during passage through the atmosphere and very large exit pupil in the optical system which are required in each of these cases.

  10. Design of a high average-power FEL driven by an existing 20 MV electrostatic-accelerator

    SciTech Connect

    Kimel, I.; Elias, L.R.

    1995-12-31

    There are some important applications where high average-power radiation is required. Two examples are industrial machining and space power-beaming. Unfortunately, up to date no FEL has been able to show more than 10 Watts of average power. To remedy this situation we started a program geared towards the development of high average-power FELs. As a first step we are building in our CREOL laboratory, a compact FEL which will generate close to 1 kW in CW operation. As the next step we are also engaged in the design of a much higher average-power system based on a 20 MV electrostatic accelerator. This FEL will be capable of operating CW with a power output of 60 kW. The idea is to perform a high power demonstration using the existing 20 MV electrostatic accelerator at the Tandar facility in Buenos Aires. This machine has been dedicated to accelerate heavy ions for experiments and applications in nuclear and atomic physics. The necessary adaptations required to utilize the machine to accelerate electrons will be described. An important aspect of the design of the 20 MV system, is the electron beam optics through almost 30 meters of accelerating and decelerating tubes as well as the undulator. Of equal importance is a careful design of the long resonator with mirrors able to withstand high power loading with proper heat dissipation features.

  11. High-average-power 266 nm generation with a KBe₂BO₃F₂ prism-coupled device.

    PubMed

    Wang, Lirong; Zhai, Naixia; Liu, Lijuan; Wang, Xiaoyang; Wang, Guiling; Zhu, Yong; Chen, Chuangtian

    2014-11-01

    High-average-power fourth harmonic generation (4thHG) of an Nd:YAG laser has been achieved by using a KBe₂BO₃F₂-prism-coupled device (KBBF-PCD) . The highest output power of 7.86 W at 266 nm was obtained with a conversion efficiency of 10%. To our knowledge, this is the highest power ever obtained by a KBBF-PCD. The stability of the 266 nm output power at 3.26 W was measured over a period of 60 minutes, and the standard deviation jitter of the average power was 1.4%. Moreover, the temperature bandwidth for KBBF was also measured at 266nm for the first time,which shows that KBBF has significant advantages in high power 4thHG compared to other major nonlinear optical crystals and is potential for UV applications. PMID:25401859

  12. Nonlinear femtosecond pulse compression at high average power levels by use of a large-mode-area holey fiber.

    PubMed

    Südmeyer, T; Brunner, F; Innerhofer, E; Paschotta, R; Furusawa, K; Baggett, J C; Monro, T M; Richardson, D J; Keller, U

    2003-10-15

    We demonstrate that nonlinear fiber compression is possible at unprecedented average power levels by use of a large-mode-area holey (microstructured) fiber and a passively mode-locked thin disk Yb:YAG laser operating at 1030 nm. We broaden the optical spectrum of the 810-fs pump pulses by nonlinear propagation in the fiber and remove the resultant chirp with a dispersive prism pair to achieve 18 W of average power in 33-fs pulses with a peak power of 12 MW and a repetition rate of 34 MHz. The output beam is nearly diffraction limited and is linearly polarized. PMID:14587786

  13. Power-averaging method to characterize and upscale permeability in DFNs

    NASA Astrophysics Data System (ADS)

    De Dreuzy, J. R.; Davy, P.; Pichot, G.; Le Goc, R.; Maillot, J.; Darcel, C.; Meheust, Y.

    2015-12-01

    In a lot of geological environments, permeability is dominated by the existence of fractures and by their degree of interconnections. Flow properties depend mainly on the statistical properties of the fracture population (length, apertures, orientation), on the network topology, as well as on some detailed properties within fracture planes. None of them can be a priori discarded as fracture networks are potentially close to some percolation threshold. Still, most details are strongly homogenized by the inherent diffusive nature of flows. It should thus be possible to upscale permeability on the basis of a limited number of descriptors. Based on an extensive analysis of 2D and 3D DFNs as well as on reference connectivity structures, we investigate the relation between the local fracture structures and the effective permeability. On one hand poor connectivity, small intersections and fracture closures limit permeability. If these patterns control flow, permeability would derive from a suite of fracture in series dominated by its weakest element. Effective permeability could then be approached by the harmonic mean of the local permeabilities. On the other hand, extended fractures and locally higher fracture densities, enhance permeability. If these patterns control flow, all fractures would take equally part to flow and effective permeability would tend to the arithmetic mean of the local permeabilities. Defined as the relative weight between the two extreme harmonic and arithmetic means, the power-law averaging exponent gives a compact way to compare fracture network hydraulics. It may further lead to some comprehensive upscaling rules. Permeability is not only determined by global connectivity but also by more local effects. We measure them by defining a local connectivity index equal to the number of fracture connections at some reference local scale. Knowledge of the relative local to global effects should help optimizing characterization strategies.

  14. SiC Semiconductor Detector Power Monitors for Space Nuclear Reactors

    NASA Astrophysics Data System (ADS)

    Reisi Fard, Mehdi; Blue, Thomas E.; Miller, Don W.

    2004-02-01

    As a part of a Department of Energy-Nuclear Engineering Research Initiative (NERI) Project, we are investigating SiC semiconductor detectors as power monitors for Generation IV power reactors. SiC detectors are well-suited as power monitors for reactors for space nuclear propulsion, due to their characteristics of small size, mass, and power consumption; mechanical ruggedness; radiation hardness; capability for high temperature operation; and potential for pulse mode operation at high count rates, which may allow for a reduction in the complexity of the reactor instrumentation and control system, as well as allow for verification of detector sensitivity, verification of channel operability, and channel self-repair. In this paper, a mathematical model of a SiC detector is presented. The model includes a description of the formation of electron-hole pairs in a SiC diode detector, using the computer code TRIM. The TRIM results are used as input to a MATLAB simulation of detector current output pulse formation, the results of which are intended for use as the input to a model of the detector channel as a whole.

  15. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires.

    PubMed

    Chen, R S; Wang, W C; Lu, M L; Chen, Y F; Lin, H C; Chen, K H; Chen, L C

    2013-08-01

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed. PMID:23779084

  16. Universal solders for direct and powerful bonding on semiconductors, diamond, and optical materials

    NASA Astrophysics Data System (ADS)

    Mavoori, Hareesh; Ramirez, Ainissa G.; Jin, Sungho

    2001-05-01

    The surfaces of electronic and optical materials such as nitrides, carbides, oxides, sulfides, fluorides, selenides, diamond, silicon, and GaAs are known to be very difficult to bond with low melting point solders (<300 °C). We have achieved a direct and powerful bonding on these surfaces by using low temperature solders doped with rare-earth elements. The rare earth is stored in micron-scale, finely-dispersed intermetallic islands (Sn3Lu or Au4Lu), and when released, causes chemical reactions at the interface producing strong bonds. These solders directly bond to semiconductor surfaces and provide ohmic contacts. They can be useful for providing direct electrical contacts and interconnects in a variety of electronic assemblies, dimensionally stable and reliable bonding in optical fiber, laser, or thermal management assemblies.

  17. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  18. High sustained average power cw and ultrafast Yb:YAG near-diffraction-limited cryogenic solid-state laser.

    PubMed

    Brown, David C; Singley, Joseph M; Kowalewski, Katie; Guelzow, James; Vitali, Victoria

    2010-11-22

    We report what we believe to be record performance for a high average power Yb:YAG cryogenic laser system with sustained output power. In a CW oscillator-single-pass amplifier configuration, 963 W of output power was measured. In a second configuration, a two amplifier Yb:YAG cryogenic system was driven with a fiber laser picosecond ultrafast oscillator at a 50 MHz repetition rate, double-passed through the first amplifier and single-passed through the second, resulting in 758 W of average power output. Pulses exiting the system have a FWHM pulsewidth of 12.4 ps, an energy/pulse of 15.2 μJ, and a peak power of 1.23 MW. Both systems are force convection-cooled with liquid nitrogen and have been demonstrated to run reliably over long time periods. PMID:21164825

  19. High-average-power, intense THz pulses from a LiNbO3 slab with silicon output coupler

    NASA Astrophysics Data System (ADS)

    Tsarev, M. V.; Ehberger, D.; Baum, P.

    2016-02-01

    Many applications of THz radiation require high fields and high repetition rates at the same time, implying substantial average power levels. Here, we report high-power Cherenkov-type THz generation in a LiNbO3 slab covered with a silicon prism outcoupler, a geometry in which the ratio between heat-removing surfaces and pump volume is naturally maximized for facilitating heat removal. At a conversion efficiency of 0.04 %, we achieve ~100 times more output power than before with such geometry. Although about 10 % of the 15 W pump power is converted to heat via multi-photon absorption effects, the peak crystal temperature increases by only 8 K. This result is due to the focus' extreme aspect ratio of ~100, indicating the scalability of the approach to even higher average power levels. A line-shaped focus should be advantageous for removing heat in other optical conversions as well.

  20. Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

    PubMed

    Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

    2009-04-01

    We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees. PMID:19340174

  1. New Performance Indicators of Metal-Oxide-Semiconductor Field-Effect Transistors for High-Frequency Power-Conscious Design

    NASA Astrophysics Data System (ADS)

    Katayama, Kosuke; Fujishima, Minoru

    2012-02-01

    With the progress of complementary metal-oxide-semiconductor (CMOS) process technology, it is possible to apply CMOS devices to millimeter-wave amplifier design. However, the power consumption of the system becomes higher in proportion to its target frequency. Moreover, CMOS devices are biased at a point where the device achieves the highest gain and consumes much power. In order to reduce the power consumption without any compromise, we introduce two types of indicator. One works towards achieving the highest gain with the lowest power consumption. The other works towards achieving the highest linearity with consideration of the power consumption. In this work, we have shown the effectiveness of those indicators by applying measured data of the fabricated metal-oxide-semiconductor field-effect transistors (MOSFETs) to cascade common-source amplifiers.

  2. Spatial distribution of average charge state and deposition rate in high power impulse magnetron sputtering of copper

    SciTech Connect

    Anders, Andre; Horwat, David; Anders, Andre

    2008-05-10

    The spatial distribution of copper ions and atoms in high power impulse magnetron sputtering (HIPIMS) discharges was determined by (i) measuring the ion current to electrostatic probes and (ii) measuring the film thickness by profilometry. A set of electrostatic and collection probes were placed at different angular positions and distances from the target surface. The angular distribution of the deposition rate and the average charge state of the copper species (including ions and neutrals) were deduced.The discharge showed a distinct transition to a high current mode dominated by copper self-sputtering when the applied voltage exceeded the threshold of 535 V. For a lower voltage, the deposition rate was very low and the average charge state was found to be less than 0.4. For higher voltage (and average power), the absolute deposition rates were much higher, but they were smaller than the corresponding direct current (DC) rates if normalized to the same average power. At the high voltage level, the spatial distribution of the average charge state showed some similarities with the distribution of the magnetic field, suggesting that the generation and motion of copper ions is affected by magnetized electrons. At higher voltage, the average charge state increases with the distance from the target and locally may exceed unity, indicating the presence of significant amounts of doubly charged copper ions.

  3. High average power harmonic mode-locking of a Raman fiber laser based on nonlinear polarization evolution

    NASA Astrophysics Data System (ADS)

    Liu, J.; Zhao, C. J.; Gao, Y. X.; Fan, D. Y.

    2016-03-01

    We experimentally demonstrate the operation of a stable harmonically mode-locked Raman fiber laser based on the nonlinear polarization rotation technique. A maximum average output power of up to 235 mW is achieved at the repetition rate of 466.2 MHz, corresponding to the 1665th order harmonic mode-locking. The temporal width of the mode-locked pulse train is 450 ps. The experimental results should shed some light on the design of wavelength versatile ultrashort lasers with high repetition rate and average output power.

  4. Alternative lattice options for energy recovery in high-average-power high-efficiency free-electron lasers

    SciTech Connect

    Piot, P.; /Northern Illinois U. /NICADD, DeKalb /Fermilab

    2009-03-01

    High-average-power free-electron lasers often rely on energy-recovering linacs. In a high-efficiency free electron laser, the main limitation to high average power stems from the fractional energy spread induced by the free-electron laser process. Managing beams with large fractional energy spread while simultaneously avoiding beam losses is extremely challenging and relies on intricate longitudinal phase space manipulations. In this paper we discuss a possible alternative technique that makes use of an emittance exchange between one of the transverse and the longitudinal phase spaces.

  5. Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation

    NASA Astrophysics Data System (ADS)

    Cadiz, F.; Paget, D.; Rowe, A. C. H.; Berkovits, V. L.; Ulin, V. P.; Arscott, S.; Peytavit, E.

    2013-09-01

    For n- and p-type semiconductors doped above the 1016 cm-3 range, simple analytical expressions for the surface recombination velocity S have been obtained as a function of excitation power P and surface state density NT. These predictions are in excellent agreement with measurements on p-type GaAs films, using a novel polarized microluminescence technique. The effect on S of surface passivation is a combination of the changes of three factors, each of which depends on NT: (i) a power-independent factor which is inversely proportional to NT and (ii) two factors which reveal the effect of photovoltage and the shift of the electron surface quasi Fermi level, respectively. In the whole range of accessible excitation powers, these two factors play a significant role so that S always depends on power. Three physical regimes are outlined. In the first regime, illustrated experimentally by the oxidized GaAs surface, S depends on P as a power law of exponent determined by NT. A decrease of S such as the one induced by sulfide passivation is caused by a marginal decrease of NT. In a second regime, as illustrated by GaInP-encapsulated GaAs, because of the reduced value of S, the photoelectron concentration in the subsurface depletion layer can no longer be neglected. Thus, S-1 depends logarithmically on P and very weakly on surface state density. In a third regime, expected at extremely small values of P, the photovoltage is comparable to the thermal energy, and S increases with P and decreases with increasing NT.

  6. Femtosecond Innoslab amplifier with 300W average power and pulse energies in the mJ-regime

    NASA Astrophysics Data System (ADS)

    Mans, T.; Graf, R.; Dolkemeyer, J.; Schnitzler, C.

    2014-02-01

    We demonstrate a femtosecond Yb:YAG InnoSlab laser amplifier producing <3mJ pulse energy at 100kHz pulse repetition rate. The minimal pulse duration is <1ps resulting in pulse powers <3GW. High energy and high average power could be obtained with the use of chirped pulse amplification on the power amplifier end. The laser setup consists of a seed laser with 10mW average power at pulse repetition rates of 100kHz to 1MHz, a pre-amplifier stage, a highpower InnoSlab-amplifier stage and a grating based pulse compressor. This laser source is suited for pumping of OPCPA setups und parallelisation of applications in materials processing.

  7. Efficient processing of CFRP with a picosecond laser with up to 1.4 kW average power

    NASA Astrophysics Data System (ADS)

    Onuseit, V.; Freitag, C.; Wiedenmann, M.; Weber, R.; Negel, J.-P.; Löscher, A.; Abdou Ahmed, M.; Graf, T.

    2015-03-01

    Laser processing of carbon fiber reinforce plastic (CFRP) is a very promising method to solve a lot of the challenges for large-volume production of lightweight constructions in automotive and airplane industries. However, the laser process is actual limited by two main issues. First the quality might be reduced due to thermal damage and second the high process energy needed for sublimation of the carbon fibers requires laser sources with high average power for productive processing. To achieve thermal damage of the CFRP of less than 10μm intensities above 108 W/cm² are needed. To reach these high intensities in the processing area ultra-short pulse laser systems are favored. Unfortunately the average power of commercially available laser systems is up to now in the range of several tens to a few hundred Watt. To sublimate the carbon fibers a large volume specific enthalpy of 85 J/mm³ is necessary. This means for example that cutting of 2 mm thick material with a kerf width of 0.2 mm with industry-typical 100 mm/sec requires several kilowatts of average power. At the IFSW a thin-disk multipass amplifier yielding a maximum average output power of 1100 W (300 kHz, 8 ps, 3.7 mJ) allowed for the first time to process CFRP at this average power and pulse energy level with picosecond pulse duration. With this unique laser system cutting of CFRP with a thickness of 2 mm an effective average cutting speed of 150 mm/sec with a thermal damage below 10μm was demonstrated.

  8. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    SciTech Connect

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  9. Semiconductor disk laser-pumped subpicosecond holmium fibre laser

    SciTech Connect

    Chamorovskiy, A Yu; Marakulin, A V; Leinonen, T; Kurkov, Andrei S; Okhotnikov, Oleg G

    2012-01-31

    The first passively mode-locked holmium fibre laser has been demonstrated, with a semiconductor saturable absorber mirror (SESAM) as a mode locker. Semiconductor disk lasers have been used for the first time to pump holmium fibre lasers. We obtained 830-fs pulses at a repetition rate of 34 MHz with an average output power of 6.6 mW.

  10. Stopping power of fluorides and semiconductor organic films for low-velocity protons

    SciTech Connect

    Serkovic Loli, L. N.; Sanchez, E. A.; Grizzi, O.; Arista, N. R.

    2010-02-15

    A combined experimental and theoretical study of the energy loss of protons in fluorides and organic films is presented. The measurements were performed in fresh AlF{sub 3}, LiF, and N,N{sup '}-bis(1-ethylpropyl)-perylene-3,4,9,10-tetracarboxdiimide (EP-PTCDI) evaporated in situ on self-supported C or Ag foils, covering the very low energy range from 25 keV down to 0.7 keV. The transmission method is used in combination with time-of-flight (TOF) spectrometry. In the case of fluorides with large band gap energies (AlF{sub 3} and LiF), the experimental stopping power increases almost linearly with the mean projectile velocity showing a velocity threshold at about 0.1 a.u. These features are well reproduced by a model based on quantum scattering theory that takes into account the velocity distribution and the excitation of the active 2p electrons in the F{sup -} anions, and the properties of the electronic bands of the insulators. In the case of the semiconductor organic film with a lower gap, the experimental stopping power increases linearly with the mean projectile velocity without presenting a clear threshold. This trend is also reproduced by the proposed model.

  11. Efficient power extraction in surface-emitting semiconductor lasers using graded photonic heterostructures.

    PubMed

    Xu, Gangyi; Colombelli, Raffaele; Khanna, Suraj P; Belarouci, Ali; Letartre, Xavier; Li, Lianhe; Linfield, Edmund H; Davies, A Giles; Beere, Harvey E; Ritchie, David A

    2012-01-01

    Symmetric and antisymmetric band-edge modes exist in distributed feedback surface-emitting semiconductor lasers, with the dominant difference being the radiation loss. Devices generally operate on the low-loss antisymmetric modes, although the power extraction efficiency is low. Here we develop graded photonic heterostructures, which localize the symmetric mode in the device centre and confine the antisymmetric modes close to the laser facet. This modal spatial separation is combined with absorbing boundaries to increase the antisymmetric mode loss, and force device operation on the symmetric mode, with elevated radiation efficiency. Application of this concept to terahertz quantum cascade lasers leads to record-high peak-power surface emission (>100 mW) and differential efficiencies (230 mW A(-1)), together with low-divergence, single-lobed emission patterns, and is also applicable to continuous-wave operation. Such flexible tuning of the radiation loss using graded photonic heterostructures, with only a minimal influence on threshold current, is highly desirable for optimizing second-order distributed feedback lasers. PMID:22805559

  12. A Code to Produce Cell Averaged Cross Sections for Fast Critical Assemblies and Fast Power Reactors.

    Energy Science and Technology Software Center (ESTSC)

    1987-05-14

    Version 00 SLAROM solves the neutron integral transport equations to determine the flux distribution and spectra in a fast reactor lattice and calculates cell averaged effective cross sections. The code uses multigroup data of the type in DLC-111/JFS that use Bondarenko factors for resonance effects.

  13. 200W average power 1mJ pulse energy from spectrally combined pulsed sub-5 ns fiber laser source

    NASA Astrophysics Data System (ADS)

    Schmidt, O.; Ortac, B.; Limpert, J.; Tünnermann, A.; Andersen, Thomas V.

    2009-02-01

    In this contribution, we report on spectral combination of four sub-5ns pulsed fiber amplifier systems with an average output power of 200W at 200kHz repetition rate resulting in 1mJ of pulse energy. A dielectric reflection grating is used to combine four individual beams to one output possessing a measured M2 value of 1.3 and 1.8, respectively, independent of power level. Extraction of higher pulse energies and peak powers will be discussed.

  14. Transmission line pulse system for avalanche characterization of high power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Riccio, Michele; Ascione, Giovanni; De Falco, Giuseppe; Maresca, Luca; De Laurentis, Martina; Irace, Andrea; Breglio, Giovanni

    2013-05-01

    Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different

  15. Electron-beam and high-speed optical diagnostics for the average power laser experiment (APLE) program

    NASA Astrophysics Data System (ADS)

    Lumpkin, Alex H.; McVey, Brian D.; Greegor, Robert B.; Dowell, David H.

    1992-07-01

    The average power laser experiment (APLE) program is a collaboration between Boeing Aerospace and Electronics Company and Los Alamos National Laboratory to build a free-electron laser (FEL) operating at a wavelength of 10 μm and an average power of 100 kW. This program includes demonstration experiments at Boeing on the injector and at Los Alamos on a single accelerator master oscillator power amplifier (SAMOPA). In response to simulations of the expected electron beam properties, diagnostic plans have been developed for the low duty factor and the 25% duty factor operations of APLE. Preliminary evaluations of diagnostics based on information conversion to visible or near-infrared light (optical-transition radiation, Cherenkov radiation, synchrotron radiation, and spontaneous-emission radiation) or electrical signals (striplines, toroids, flying wires, etc.) are addressed.

  16. Different cooling configurations for a high average power longitudinally diode-pumped Yb:YAG amplifier.

    PubMed

    Yu, Haiwu; Bourdet, Gilbert

    2006-08-20

    We analyze the temperature distribution in several Yb:YAG longitudinally pumped amplifier crystals by using various cooling configurations. The crystal designs are (i) a composite crystal made of a thin sheet of high-doped Yb:YAG bonded on a bulk piece of undoped YAG and (ii) a thick piece of low-doped Yb:YAG crystal. The cooling configurations investigated here include those both from the rear face or from the rear and side faces together. In every case we determine the average temperature rise, the longitudinal and radial temperature gradient, and the resulting crystal bending and optical phase distortion. We optimize the best cooling configuration and crystal design by compromising the average temperature, thermodeformation, and optical phase distortion. The experimental results also indicate that a thin sheet of gain medium (1.6 mm thick at 10 at. % doping) suffers from a notable bending deformation, which results in an unexpected decrease of the output energy. PMID:16892125

  17. Multipulse operation of a high average power, good beam quality zig-zag dye laser

    SciTech Connect

    Mandl, A.; Klimek, D.E.

    1996-03-01

    A laser pumped zig-zag dye laser operating at 568 nm with a pulse length {approximately} 2 {micro}s has been scaled to high power using a MOPA configuration. Pulse energies in excess of 7 J with beam quality < 2 XDL have been achieved under repetitively pulsed, 10 Hz operation. RMS jitter was measured as 0.12 of a 1 XDL spot. The device has operated with over 70 W output for runs up to 5 s. Substantially longer run times and output powers are possible. This device represents an advance in dye laser capabilities. Improvement in pointing accuracy of better than an order of magnitude have been demonstrated. In addition, an improvement in beam quality by about an order of magnitude has been achieved compared to other dye lasers operating in this power range.

  18. Simulations of the high average power selene free electron laser prototype. Master's thesis

    SciTech Connect

    Quick, D.D.

    1994-06-01

    Free electron laser (FEL) technology continues to advance, providing alternative solutions to existing and potential problems. The capabilities of an FEL with respect to tunability, power and efficiency make it an attractive choice when moving into new laser utilization fields. The initial design parameters, for any new system, offer a good base to begin system simulation tests in an effort to determine the best possible design. This is a study of the Novosibirsk design which is a prototype for the proposed SELENE FEL. The design uses a three-section, low-power optical klystron followed by a single-pass, high-power radiator. This system is inherently sensitive to electron beam quality, but affords flexibility in achieving the final design. The performance of the system is studied using the initial parameters. An FEL, configured as a simple, two section optical klystron is studied to determine the basic operating characteristics of a high current FEL klystron.

  19. Integrated Tm:fiber MOPA with polarized output and narrow linewidth with 100 W average power.

    PubMed

    Shah, Lawrence; Sims, R Andrew; Kadwani, Pankaj; Willis, Christina C C; Bradford, Joshua B; Pung, Aaron; Poutous, Menelaos K; Johnson, Eric G; Richardson, Martin

    2012-08-27

    We report on a Tm:fiber master oscillator power amplifier (MOPA) system producing 109 W CW output power, with >15 dB polarization extinction ratio, sub-nm spectral linewidth, and M2 <1.25. The system consists of polarization maintaining (PM) fiber and PM-fiber components including tapered fiber bundle pump combiners, a single-mode to large mode area mode field adapter, and a fiber-coupled isolator. The laser components ultimately determine the system architecture and the limits of laser performance, particularly considering the immature and rapidly developing state of fiber components in the 2 μm wavelength regime. PMID:23037103

  20. Large optical power margin of signal light in OFDR-OCT by using semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Asaka, Kota

    2008-02-01

    We demonstrate a sensitivity improvement in an optical frequency domain reflectometry-optical coherence tomography (OFDR-OCT) system with a discretely swept light source by incorporating a semiconductor optical amplifier (SOA) in a sample arm. With the system, we achieve a high sensitivity of -134.4 dB when we measure the reflective mirror with an A-line rate of 0.25 kHz. This improves the sensitivity (-125.2 dB) by 9.2 dB compared with a system without the SOA. The OCT system without the SOA shows a signal-to-noise ratio (SNR) of 56 dB when the signal light power is attenuated by about 66 dB, and the SNRs of less than 56 dB are obtained at higher attenuation levels. However, an SOA-incorporated OCT system provides the SNR of 56 dB at the much higher attenuation level of 86 dB. This means that using the SOA offers the large signal light power margin of 20 dB needed to obtain SNR of 56 dB. It is shown that the power margin is qualitatively dependent on the optical gain of the SOA. From an experimental analysis of the noises in the SOA-incorporated system, we found that the sensitivity enhancement is mainly limited by the beat noise between the reference light and the amplified spontaneous emission (ASE) of the SOA. We obtained images that show clear cluster structures of enamel crystals near the dentin-enamel junction of an extracted human tooth with our SOA-incorporated discretely swept OFDR-OCT imaging, revealing the potential to achieve a high-speed OCT system with high sensitivity.

  1. Does Stevens's Power Law for Brightness Extend to Perceptual Brightness Averaging?

    ERIC Educational Resources Information Center

    Bauer, Ben

    2009-01-01

    Stevens's power law ([Psi][infinity][Phi][beta]) captures the relationship between physical ([Phi]) and perceived ([Psi]) magnitude for many stimulus continua (e.g., luminance and brightness, weight and heaviness, area and size). The exponent ([beta]) indicates whether perceptual magnitude grows more slowly than physical magnitude ([beta] less…

  2. Error analysis in the measurement of average power with application to switching controllers

    NASA Technical Reports Server (NTRS)

    Maisel, J. E.

    1979-01-01

    The behavior of the power measurement error due to the frequency responses of first order transfer functions between the input sinusoidal voltage, input sinusoidal current and the signal multiplier was studied. It was concluded that this measurement error can be minimized if the frequency responses of the first order transfer functions are identical.

  3. A high-average power femtosecond laser for synchrotron light source applications

    NASA Astrophysics Data System (ADS)

    Wilcox, R. B.; Schoenlein, R. W.

    2007-02-01

    We describe a 60W, 70fs, 20kHz Ti:sapphire CPA laser system using cryogenically-cooled amplifiers, currently operating at the Advanced Light Source at LBNL. The system consists of an oscillator, a 20 kHz regenerative preamplifier, and two power amplifiers to produce two output beams, each at 30W. Each power amp can be pumped by two 90 Watt, 10 kHz, diode-pumped, doubled YLF lasers simultaneously (for 10 kHz) or interleaved in time (for 20 kHz). The regen is pumped at 20 kHz and 60W, producing 8W output which is split between the power amps. To maintain the crystals near the thermal conductivity peak at ~50°K, we used 300 Watt cryorefrigerators mechanically decoupled from the optical table. Pulses are compressed in a quartz transmission grating compressor, to minimize thermal distortions of the phase front typical of gold coated gratings at high power density. Transmission through the compressor is >80%, using a single 100 x 100mm grating. One of the 30W output beams is used to produce 70fs electron bunches in the synchrotron light source. The other is delayed by 300ns in a 12-pass Herriot cell before amplification, to be synchronized with the short light pulse from the synchrotron.

  4. Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm

    SciTech Connect

    Gorlachuk, P V; Ivanov, A V; Kurnosov, V D; Kurnosov, K V; Romantsevich, V I; Simakov, V A; Chernov, R V

    2014-02-28

    We report the simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data. (lasers)

  5. High-average-power diode-end-pumped intracavity-doubled Nd:YAG laser

    SciTech Connect

    Honea, E.C.; Ebbers, C.A.; Beach, R.J.; Speth, J.A.; Emanuel, M.S>; Skidmore, J.A.; Payne, S.A.

    1998-02-12

    A compact diode-pumped ND:YAG laser was frequency-doubled to 0.532 {mu}m with an intracavity KTP or LBO crystal using a `V` cavity configuration. Two acousto-optic Q-switches were employed at repetition rates of 10-30 kHz. Dichroic fold and end mirrors were used to output two beams with up to 140 W of 0.532 {mu}m power using KTP and 116 W using LBO as the frequency doubling crystal. This corresponds to 66% of the maximum output power at 1.064 {mu}m obtained with an optimized output coupler reflectivity. The minimum output pulse duration varied with repetition rate from 90 to 130 ns. The multimode output beam had a smooth profile and a beam quality of M{sup 2} = 5 1.

  6. Program THEK energy production units of average power and using thermal conversion of solar radiation

    NASA Technical Reports Server (NTRS)

    1978-01-01

    General studies undertaken by the C.N.R.S. in the field of solar power plants have generated the problem of building energy production units in the medium range of electrical power, in the order of 100 kW. Among the possible solutions, the principle of the use of distributed heliothermal converters has been selected as being, with the current status of things, the most advantageous solution. This principle consists of obtaining the conversion of concentrated radiation into heat by using a series of heliothermal conversion modules scattered over the ground; the produced heat is collected by a heat-carrying fluid circulating inside a thermal loop leading to a device for both regulation and storage.

  7. High-Efficiency 800 nm Multi-Layer Dielectric Gratings for High Average Power Laser Systems

    SciTech Connect

    Nguyen, H T; Britten, J A; Patel, D; Brizuela, F; Rocca, J J; Menoni, C S

    2006-06-15

    We report on the design, fabrication, and performance of a 1740 l/mm multilayer dielectric diffraction grating for use with 800 nm light. At an input angle of 8{sup o} from Littrow and a wavelength from 770 to 830 nm, >90% diffraction efficiency is achieved, with peak diffraction efficiency of >97% at 800nm. We will also comment on laser damage threshold and power-handling properties.

  8. Compact, High Power, Multi-Spectral Mid-Infrared Semiconductor Laser Package

    NASA Astrophysics Data System (ADS)

    Guo, Bujin; Hwang, Wen-Yen; Lin, Chich-Hsiang

    2001-10-01

    Through a vertically integrated effort involving atomic level material engineering, advanced device processing development, state-of-the-art optomechanical packaging, and thermal management, Applied Optoelectronics, Inc. (AOI), University of Houston (U H), and Physical Science, Inc. (PSI) have made progress in both Sb-based type-II semiconductor material and in P-based type-I laser device development. We have achieved record performance on inP based quantum cascade continuous wave (CW) laser (with more than 5 mW CW power at 210 K). Grating-coupled external-cavity quantum cascade lasers were studied for temperatures from 20 to 230 K. A tuning range of 88 nm has been obtained at 80 K. The technology can be made commercially available and represents a significant milestone with regard to the Dual Use Science and Technology (DUST) intention of fostering dual use commercial technology for defense need. AOI is the first commercial company to ship products of this licensed technology.

  9. SM green fiber laser operating in CW and QCW regimes and producing over 550W of average output power

    NASA Astrophysics Data System (ADS)

    Gapontsev, Valentin; Avdokhin, Alexey; Kadwani, Pankaj; Samartsev, Igor; Platonov, Nikolai; Yagodkin, Roman

    2014-02-01

    We report a single-mode (SM) green laser based on single-pass frequency doubling of a linearly-polarized narrowlinewidth Yb fiber laser in LBO crystal, and configured to operate in a range of regimes from continuous-wave (CW) to high-repetition-rate quasi-continuous-wave (QCW). Adjusting the duty cycle, we maintained high second harmonic generation (SHG) efficiency for various output powers. Average powers of over 550W in QCW and over 350W in CW regimes were obtained with the wall-plug efficiency up to 15%, opening the possibility to creating new class of simple, compact and efficient single-mode green lasers with output power up to 1kW and above. The same approach could also be used to create high-power lasers operating at other wavelengths in ultraviolet and visible spectral ranges.

  10. Mode-locked Yb:YAG thin-disk oscillator with 41 µJ pulse energy at 145 W average infrared power and high power frequency conversion.

    PubMed

    Bauer, Dominik; Zawischa, Ivo; Sutter, Dirk H; Killi, Alexander; Dekorsy, Thomas

    2012-04-23

    We demonstrate the generation of 1.1 ps pulses containing more than 41 µJ of energy directly out of an Yb:YAG thin-disk without any additional amplification stages. The laser oscillator operates in ambient atmosphere with a 3.5 MHz repetition rate and 145 W of average output power at a fundamental wavelength of 1030 nm. An average output power of 91.5 W at 515 nm was obtained by frequency doubling with a conversion efficiency exceeding 65%. Third harmonic generation resulted in 34 W at 343 nm at 34% efficiency. PMID:22535061

  11. 60-W average power in 810-fs pulses from a thin-disk Yb:YAG laser.

    PubMed

    Innerhofer, E; Südmeyer, T; Brunner, F; Häring, R; Aschwanden, A; Paschotta, R; Hönninger, C; Kumkar, M; Keller, U

    2003-03-01

    We demonstrate a passively mode-locked diode-pumped thin-disk Yb:YAG laser generating 810-fs pulses at 1030 nm with as much as 60 W of average output power (without using an amplifier). At a pulse repetition rate of 34.3 MHz, the pulse energy is 1.75 microJ and the peak power is as high as 1.9 MW. The beam quality is close to the diffraction limit, with M2 < 1.1. PMID:12659446

  12. SBS of repetitively pulsed radiation and possibility of increasing of the pump average power

    SciTech Connect

    Andreev, N.; Kulagin, O.; Palashov, O.; Pasmanik, G.; Rodchenkov, V.

    1995-12-31

    The features of liquid purification from molecular and dispersive admixtures are studied. The analysis has revealed the processes (thermal effects, microparticles heating with a subsequent optical breakdown, Stimulated Raman Scattering) limiting pumping pulse energy. These effects complicate also a realization of a high quality phase conjugation at SBS. The data concerning physical properties of liquid tetrachlorides and freons are presented. The picture of a behavior of liquid under conditions of an optical breakdown is described. Some recommendations regarding a choice of nonlinear media are formulated. The two-cell scheme providing a phase conjugation of powerful short laser pulses is proposed. This is important in the field of inertial confinement fusion.

  13. High energy, high average power solid state green or UV laser

    DOEpatents

    Hackel, Lloyd A.; Norton, Mary; Dane, C. Brent

    2004-03-02

    A system for producing a green or UV output beam for illuminating a large area with relatively high beam fluence. A Nd:glass laser produces a near-infrared output by means of an oscillator that generates a high quality but low power output and then multi-pass through and amplification in a zig-zag slab amplifier and wavefront correction in a phase conjugator at the midway point of the multi-pass amplification. The green or UV output is generated by means of conversion crystals that follow final propagation through the zig-zag slab amplifier.

  14. Edge-facet pumped, multi-aperture, thin-disk laser geometry for very high average power output scaling

    DOEpatents

    Zapata, Luis E.

    2004-12-21

    The average power output of a laser is scaled, to first order, by increasing the transverse dimension of the gain medium while increasing the thickness of an index matched light guide proportionately. Strategic facets cut at the edges of the laminated gain medium provide a method by which the pump light introduced through edges of the composite structure is trapped and passes through the gain medium repeatedly. Spontaneous emission escapes the laser volume via these facets. A multi-faceted disk geometry with grooves cut into the thickness of the gain medium is optimized to passively reject spontaneous emission generated within the laser material, which would otherwise be trapped and amplified within the high index composite disk. Such geometry allows the useful size of the laser aperture to be increased, enabling the average laser output power to be scaled.

  15. Non-Invasive Beam Detection in a High-Average Power Electron Accelerator

    SciTech Connect

    Williams, J.; Biedron, S.; Harris, J.; Martinez, J.; Milton, S. V.; Van Keuren, J.; Benson, Steve V.; Evtushenko, Pavel; Neil, George R.; Zhang, Shukui

    2013-12-01

    For a free-electron laser (FEL) to work effectively the electron beam quality must meet exceptional standards. In the case of an FEL operating at infrared wavelengths in an amplifier configuration the critical phase space tends to be in the longitudinal direction. Achieving high enough longitudinal phase space density directly from the electron injector system of such an FEL is difficult due to space charge effects, thus one needs to manipulate the longitudinal phase space once the beam energy reaches a sufficiently high value. However, this is fraught with problems. Longitudinal space charge and coherent synchrotron radiation can both disrupt the overall phase space, furthermore, the phase space disruption is exacerbated by the longitudinal phase space manipulation process required to achieve high peak current. To achieve and maintain good FEL performance one needs to investigate the longitudinal emittance and be able to measure it during operation preferably in a non-invasive manner. Using the electro-optical sampling (EOS) method, we plan to measure the bunch longitudinal profile of a high-energy (~120-MeV), high-power (~10kW or more FEL output power) beam.

  16. Brightness and average power as driver for advancements in diode lasers and their applications

    NASA Astrophysics Data System (ADS)

    Hengesbach, Stefan; Poprawe, Reinhart; Hoffmann, Dieter; Traub, Martin; Schwarz, Thomas; Holly, Carlo; Eibl, Florian; Weisheit, Andreas; Vogt, Sabrina; Britten, Simon; Ungers, Michael; Thombansen, Ulrich; Engelmann, Christoph; Mamuschkin, Viktor; Lott, Philipp

    2015-03-01

    Spatial and spectral emission characteristics and efficiency of high-power diode laser (HPDL) based pump sources enable and define the performance of the fundamental solid state laser concepts like disk, fiber and slab lasers. HPDL are also established as a versatile tool for direct materials processing substituting other laser types like CO2 lasers and lamp pumped solid state lasers and are starting to substitute even some of the diode pumped solid state lasers. Both, pumping and direct applications will benefit from the further improvement of the brightness and control of the output spectrum of HPDL. While edge emitting diodes are already established, a new generation of vertical emitting diode lasers (VCSELs) made significant progress and provides easy scalable output power in the kW range. Beneficial properties are simplified beam shaping, flexible control of the temporal and spatial emission, compact design and low current operation. Other characteristics like efficiency and brightness of VCSELs are still lagging behind the edge emitter performance. Examples of direct applications like surface treatment, soldering, welding, additive manufacturing, cutting and their requirements on the HPDL performance are presented. Furthermore, an overview on process requirements and available as well as perspective performance of laser sources is derived.

  17. Microdrilling of metals using femtosecond laser pulses and high average powers at 515 nm and 1030 nm

    NASA Astrophysics Data System (ADS)

    Döring, S.; Ancona, A.; Hädrich, S.; Limpert, J.; Nolte, S.; Tünnermann, A.

    2010-07-01

    We investigate the microdrilling of metals (stainless steel, copper and tungsten) for two different wavelengths, 1030 nm and 515 nm, in the regime of femtosecond laser pulses. An ytterbium-doped fibre CPA system provides high pulse energies (up to 70 μJ) and high repetition rates (up to 800 kHz), corresponding to high average powers of about 50 W, for this experimental study.

  18. Rate-equation analysis for the frequency-chirp-to-modulated-power ratio of a semiconductor-diode laser

    SciTech Connect

    Welford, D.R.

    1985-11-01

    An expression for the frequency chirp to modulated power ratio (CPR) is derived from a rate-equation analysis of the small-signal, injection-current modulation in a semiconductor diode laser. The model includes the effect of lateral carrier diffusion across the active region of the laser diode. The modulation-frequency dependence of the CPR is flat from dc to a few hundred megahertz, beyond which it is proportional to the modulation frequency.

  19. A rate equation analysis for the frequency chirp to modulated power ratio of a semiconductor diode laser

    SciTech Connect

    Welford, D.

    1985-11-01

    An expression for the frequency chirp to modulated power ratio (CPR) is derived from a rate equation analysis of the small-signal, injection current modulation in a semiconductor diode laser. The model includes the effect of lateral carrier diffusion across the active region of the laser diode. The modulation frequency dependence of the CPR is flat from dc to a few hundred megahertz, beyond which it is proportional to the modulation frequency.

  20. High-average-power, 100-Hz-repetition-rate, tabletop soft-x-ray lasers at sub-15-nm wavelengths

    NASA Astrophysics Data System (ADS)

    Reagan, Brendan A.; Berrill, Mark; Wernsing, Keith A.; Baumgarten, Cory; Woolston, Mark; Rocca, Jorge J.

    2014-05-01

    Efficient excitation of dense plasma columns at 100-Hz repetition rate using a tailored pump pulse profile produced a tabletop soft-x-ray laser average power of 0.1 mW at λ = 13.9 nm and 20 μW at λ = 11.9 nm from transitions of Ni-like Ag and Ni-like Sn, respectively. Lasing on several other transitions with wavelengths between 10.9 and 14.7 nm was also obtained using 0.9-J pump pulses of 5-ps duration from a compact diode-pumped chirped pulse amplification Yb:YAG laser. Hydrodynamic and atomic plasma simulations show that the pump pulse profile, consisting of a nanosecond ramp followed by two peaks of picosecond duration, creates a plasma with an increased density of Ni-like ions at the time of peak temperature that results in a larger gain coefficient over a temporally and spatially enlarged space leading to a threefold increase in the soft-x-ray laser output pulse energy. The high average power of these compact soft-x-ray lasers will enable applications requiring high photon flux. These results open the path to milliwatt-average-power tabletop soft-x-ray lasers.

  1. Thin-disk multipass amplifier for ultrashort laser pulses with kilowatt average output power and mJ pulse energies

    NASA Astrophysics Data System (ADS)

    Negel, Jan-Philipp; Voss, Andreas; Abdou Ahmed, Marwan; Bauer, Dominik; Sutter, Dirk; Killi, Alexander; Graf, Thomas

    2014-05-01

    We report on a Yb:YAG thin-disk multipass amplifier for ultrashort laser pulses delivering an average output power of 1.1 kW which to the best of our knowledge is the highest output power reported from such a system so far. A modified commercial TruMicro5050 laser delivers the seed pulses with an average power of 80 W at a wavelength of 1030 nm, a pulse duration of 6.5 ps and a repetition rate of 800 kHz. These pulses are amplified to 1.38 mJ of pulse energy with a duration of 7.3 ps. To achieve this, we developed a scheme in which an array of 40 plane mirrors is used to geometrically fold the seed beam over the pumped thin-disk crystal. Exploiting the incoming linear polarization, an overall number of 40 double-passes through the disk was realized by using the backpath through the amplifier with the orthogonal linear polarization state. Thermal issues on the disk were mitigated by zero-phonon line pumping at a wavelength of 969 nm directly into the upper laser level and by employing a retroreflective mirror pair. The amplifier exhibits an optical efficiency of 44 % and a slope efficiency of 46 %. The beam quality was measured to be better than M2=1.25 at all power levels. As this system can deliver high pulse energies and high average output powers at the same time without the need of a CPA technique, it can be very suitable for high productivity material processing with ultrashort laser pulses.

  2. Simulation of a high-average power free-electron laser oscillator

    SciTech Connect

    H.P. Freund; M. Shinn; S.V. Benson

    2007-03-01

    In this paper, we compare the 10 kW-Upgrade experiment at the Thomas Jefferson National Accelerator Facility in Newport News, VA, with numerical simulations using the medusa code. medusa is a three-dimensional FEL simulation code that is capable of treating both amplifiers and oscillators in both the steady-state and time-dependent regimes. medusa employs a Gaussian modal expansion, and treats oscillators by decomposing the modal representation at the exit of the wiggler into the vacuum Gaussian modes of the resonator and then analytically determining the propagation of these vacuum resonator modes through the resonator back to the entrance of the wiggler in synchronism with the next electron bunch. The bunch length in the experiment is of the order of 380–420 fsec FWHM. The experiment operates at a wavelength of about 1.6 microns and the wiggler is 30 periods in length; hence, the slippage time is about 160 fsec. Because of this, slippage is important, and must be included in the simulation. The observed single pass gain is 65%–75% and, given the experimental uncertainties, this is in good agreement with the simulation. Multipass simulations including the cavity detuning yield an output power of 12.4 kW, which is also in good agreement with the experiment.

  3. 250 W average power, 100 kHz repetition rate cryogenic Yb:YAG amplifier for OPCPA pumping.

    PubMed

    Zapata, L E; Reichert, F; Hemmer, M; Kärtner, F X

    2016-02-01

    A cryogenically cooled, bulk Yb:YAG, four-pass amplifier delivering up to 250 W average power at 100 kHz repetition rate is reported. The 2.5 mJ amplified optical pulses show a sub-20 ps duration before temporal compression and a spectrum supporting a transform-limited duration of 3.6 ps. The power instabilities were measured to be <0.5% rms over 30 min at full power, and the spatial intensity profile showed a flat-top distribution and near diffraction-limited beam quality. This compact amplifier is an ideal source for pumping either near-IR or mid-IR optical parametric chirped pulse amplifiers. PMID:26907405

  4. Yb-fiber-laser-based, 1.8 W average power, picosecond ultraviolet source at 266 nm.

    PubMed

    Chaitanya Kumar, S; Canals Casals, J; Sanchez Bautista, E; Devi, K; Ebrahim-Zadeh, M

    2015-05-15

    We report a compact, stable, high-power, picosecond ultraviolet (UV) source at 266 nm based on simple single-pass two-step fourth-harmonic generation (FHG) of a mode-locked Yb-fiber laser at 79.5 MHz in LiB3O5 (LBO) and β-BaB2O4. Using a 30-mm-long LBO crystal for single-pass second-harmonic generation, we achieve up to 9.1 W of average green power at 532 nm for 16.8 W of Yb-fiber power at a conversion efficiency of 54% in 16.2 ps pulses with a TEM00 spatial profile and passive power stability better than 0.5% rms over 16 h. The generated green radiation is then used for single-pass FHG into the UV, providing as much as 1.8 W of average power at 266 nm under the optimum focusing condition in the presence of spatial walk-off, at an overall FHG conversion efficiency of ∼11%. The generated UV output exhibits passive power stability better than 4.6% rms over 1.5 h and beam pointing stability better than 84 μrad over 1 h. The UV output beam has a circularity of >80% in high beam quality with the TEM00 mode profile. To the best of our knowledge, this is the first report of picosecond UV generation at 266 nm at megahertz repetition rates. PMID:26393749

  5. Application of statistical methods (SPC) for an optimized control of the irradiation process of high-power semiconductors

    NASA Astrophysics Data System (ADS)

    Mittendorfer, J.; Zwanziger, P.

    2000-03-01

    High-power bipolar semiconductor devices (thyristors and diodes) in a disc-type shape are key components (semiconductor switches) for high-power electronic systems. These systems are important for the economic design of energy transmission systems, i.e. high-power drive systems, static compensation and high-voltage DC transmission lines. In their factory located in Pretzfeld, Germany, the company, eupec GmbH+Co.KG (eupec), is producing disc-type devices with ceramic encapsulation in the high-end range for the world market. These elements have to fulfil special customer requirements and therefore deliver tailor-made trade-offs between their on-state voltage and dynamic switching behaviour. This task can be achieved by applying a dedicated electron irradiation on the semiconductor pellets, which tunes this trade-off. In this paper, the requirements to the irradiation company Mediscan GmbH, from the point of view of the semiconductor manufacturer, are described. The actual strategy for controlling the irradiation results to fulfil these requirements are presented, together with the choice of relevant parameters from the viewpoint of the irradiation company. The set of process parameters monitored, using statistical process control (SPC) techniques, includes beam current and energy, conveyor speed and irradiation geometry. The results are highlighted and show the successful co-operation in this business. Watching this process vice versa, an idea is presented and discussed to develop the possibilities of a highly sensitive dose detection device by using modified diodes, which could function as accurate yet cheap and easy-to-use detectors as routine dosimeters for irradiation institutes.

  6. Ultrafast laser with an average power of 120 W at 515 nm and a highly dynamic repetition rate in the MHz range for novel applications in micromachining

    NASA Astrophysics Data System (ADS)

    Harth, F.; Piontek, M. C.; Herrmann, T.; L'huillier, J. A.

    2016-03-01

    A new generation of resonant scanners in the kHz-range shows ultra-high deflection speeds of more than 1000m/s but suffer from an inherent nonlinear mirror oscillation. If this oscillation is not compensated, a typical bitmap, written point by point, would be strongly distorted because of the decreasing spot distance at the turning point of the scanning mirror. However, this can be avoided by a dynamic adaption of the repetition rate (RR) of the ultrafast laser. Since resonant scanners are operated in the 10 kHz-range, this means that the RR has to be continuously swept up to several 10 000 times per second between e.g. 5MHz and 10 MHz. High-speed continuous adaption of the RR could also optimize laser micromachining of narrow curved geometries, where nowadays a time consuming approximation with numerous vectors is required. We present a laser system, which is capable of sweeping the RR more than 32 000 times per second between 5MHz and 10MHz at an average output power of more than 120W at 515nm with a pulse duration of about 40 ps. The laser consists of a semiconductor oscillator, a 3-stage fiber pre-amplifier, a solid state InnoSlab power amplifier and a SHG stage. We systematically analyzed the dynamic of the laser system as well as the spectral and temporal behavior of the optical pulses. Switching the repetition rate typically causes a varying pulse energy, which could affect the machining quality over one scanning line. This effect will be analyzed and discussed. Possible techniques to compensate or avoid this effect will be considered.

  7. High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band.

    PubMed

    Rantamäki, Antti; Sirbu, Alexei; Saarinen, Esa J; Lyytikäinen, Jari; Mereuta, Alexandru; Iakovlev, Vladimir; Kapon, Eli; Okhotnikov, Oleg G

    2014-08-15

    We present 6.1 W of output power from a flip-chip semiconductor disk laser (SDL) emitting in the 1.3 μm wavelength region. This is the first demonstration of a flip-chip SDL in this wavelength range with output powers that are comparable to those obtained with intracavity diamond heat spreaders. The flip-chip configuration circumvents the optical distortions and losses that the intracavity diamond heat spreaders can introduce into the laser cavity. This is essential for several key applications of SDLs. PMID:25121892

  8. The Mercury Laser System-A scaleable average-power laser for fusion and beyond

    SciTech Connect

    Ebbers, C A; Moses, E I

    2008-03-26

    Nestled in a valley between the whitecaps of the Pacific and the snowcapped crests of the Sierra Nevada, Lawrence Livermore National Laboratory (LLNL) is home to the nearly complete National Ignition Facility (NIF). The purpose of NIF is to create a miniature star-on demand. An enormous amount of laser light energy (1.8 MJ in a pulse that is 20 ns in duration) will be focused into a small gold cylinder approximately the size of a pencil eraser. Centered in the gold cylinder (or hohlraum) will be a nearly perfect sphere filled with a complex mixture of hydrogen gas isotopes that is similar to the atmosphere of our Sun. During experiments, the laser light will hit the inside of the gold cylinder, heating the metal until it emits X-rays (similar to how your electric stove coil emits visible red light when heated). The X-rays will be used to compress the hydrogen-like gas with such pressure that the gas atoms will combine or 'fuse' together, producing the next heavier element (helium) and releasing energy in the form of energetic particles. 2010 will mark the first credible attempt at this world-changing event: the achievement of fusion energy 'break-even' on Earth using NIF, the world's largest laser! NIF is anticipated to eventually perform this immense technological accomplishment once per week, with the capability of firing up to six shots per day - eliminating the need for continued underground testing of our nation's nuclear stockpile, in addition to opening up new realms of science. But what about the day after NIF achieves ignition? Although NIF will achieve fusion energy break-even and gain, the facility is not designed to harness the enormous potential of fusion for energy generation. A fusion power plant, as opposed to a world-class engineering research facility, would require that the laser deliver drive pulses nearly 100,000 times more frequently - a rate closer to 10 shots per second as opposed to several shots per day.

  9. Optimal dynamic vibration absorber design for minimizing the band-averaged input power using the residue theorem

    NASA Astrophysics Data System (ADS)

    D`Amico, R.; Koo, K.; Claeys, C. C.; Pluymers, B.; Desmet, W.

    2015-03-01

    This paper deals with an efficient strategy to improve the vibro-acoustic behavior of a structure over frequency bands. Genetic Algorithms are used to identify the optimal resonance frequency and location of Dynamic Vibration Absorbers (DVAs) which minimize the band-averaged input power into a plate, leading to an indirect reduction of the radiated acoustic power and global vibration. Instead of classic numerical quadrature schemes, the residue theorem is used to evaluate the band-averaged input power. This results into a considerable reduction of computational effort, as it requires only few function evaluations at complex frequencies, regardless of the analyzed bandwidth. The structural response is simulated by using the Wave Based Method (WBM). Besides an increased convergence rate as compared to classical element-based techniques, the WBM is also free in determining the optimal position of the DVAs, not restricting it to nodal grid locations. Moreover, when point connections are taken into account, only a small part of the WB matrices needs to be recomputed at each iteration, resulting in a strong reduction of the computation time. Numerical examples illustrate the benefits and the efficiency of the proposed optimization strategy.

  10. A Large-Bandwidth, Cylindrical Offner Pulse Stretcher for a High-Average-Power, 15 Femtosecond Laser

    SciTech Connect

    Molander, W A; Bayramian, A J; Campbell, R; Cross, R R; Huete, G; Schenkel, N; Ebbers, C; Caird, J; Barty, C J; Siders, C W

    2008-09-24

    We have designed and built an all-reflective pulse stretcher based on an Offner telescope. It uses cylindrical optics to simplify alignment and reduce aberrations. The stretch is {approx}1x10{sup 5} with a bandwidth of 200 nm. The stretcher is to be part of a 10 Hz repetition rate, high-average-power, femtosecond laser. This new design compensates for dispersion in the laser by using gratings of different groove spacing in the stretcher and compressor and a spectral phase corrector plate, made by magneto-rheological finishing, within the stretcher.

  11. In-situ optical phase distortion measurement of Yb:YAG thin disk in high average power regenerative amplifier

    NASA Astrophysics Data System (ADS)

    Miura, Taisuke; Chyla, Michal; Smrž, Martin; Nagisetty, Siva Sankar; Severová, Patricie; Novák, Ondřej; Endo, Akira; Mocek, TomáÅ.¡

    2013-02-01

    We are developing one kilohertz picosecond Yb:YAG thin disk regenerative amplifier with 500-W average power for medical and industrial applications. In case of high energy pulse amplification, a large area mode matching in gain media, which is drastically degenerated by the optical phase distortion, is required to avoid optical damage. We designed in-situ thin disk deformation measurement based on the combination of a precise wavefront sensor and a single mode probe beam. In contrast to a conventional interferometric measurement, this measurement is compact, easy-to-align, and is less affected by mechanical vibrations.

  12. High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier.

    PubMed

    Ferrari, G; Mewes, M O; Schreck, F; Salomon, C

    1999-02-01

    The output of two grating-stabilized external-cavity diode lasers was injected into a semiconductor tapered amplif ier in a master oscillator-power amplif ier (MOPA) configuration. At a wavelength of 671 nm this configuration produced 210 mW of power in a diffraction-limited mode with two frequency components of narrow linewidth. The frequency difference delta was varied from 20 MHz to 12 GHz, while the power ratio of the two components was freely adjustable. For delta < 2 GHz additional frequency sidebands appear in the output of the MOPA. This configuration is a f lexible and simple high-power cw laser source for light with multiple narrow-linewidth frequency components. PMID:18071437

  13. Peak-to-Average-Power-Ratio (PAPR) reduction in WiMAX and OFDM/A systems

    NASA Astrophysics Data System (ADS)

    Khademi, Seyran; Svantesson, Thomas; Viberg, Mats; Eriksson, Thomas

    2011-12-01

    A peak to average power ratio (PAPR) reduction method is proposed that exploits the precoding or beamforming mode in WiMAX. The method is applicable to any OFDM/A systems that implements beamforming using dedicated pilots which use the same beamforming antenna weights for both pilots and data. Beamforming performance depends on the relative phase shift between antennas, but is unaffected by a phase shift common to all antennas. PAPR, on the other hand, changes with a common phase shift and this paper exploits that property. An effective optimization technique based on sequential quadratic programming is proposed to compute the common phase shift. The proposed technique has several advantages compared with traditional PAPR reduction techniques in that it does not require any side-information and has no effect on power and bit-error-rate while providing better PAPR reduction performance than most other methods.

  14. All solid-state spectral broadening: an average and peak power scalable method for compression of ultrashort pulses.

    PubMed

    Seidel, Marcus; Arisholm, Gunnar; Brons, Jonathan; Pervak, Vladimir; Pronin, Oleg

    2016-05-01

    Spectral broadening in bulk material is a simple, robust and low-cost method to extend the bandwidth of a laser source. Consequently, it enables ultrashort pulse compression. Experiments with a 38 MHz repetition rate, 50 W average power Kerr-lens mode-locked thin-disk oscillator were performed. The initially 1.2 μJ, 250 fs pulses are compressed to 43 fs by means of self-phase modulation in a single 15 mm thick quartz crystal and subsequent chirped-mirror compression. The losses due to spatial nonlinear effects are only about 40 %. A second broadening stage reduced the Fourier transform limit to 15 fs. It is shown that the intensity noise of the oscillator is preserved independent of the broadening factor. Simulations manifest the peak power scalability of the concept and show that it is applicable to a wide range of input pulse durations and energies. PMID:27137557

  15. Actively mode-locked Tm(3+)-doped silica fiber laser with wavelength-tunable, high average output power.

    PubMed

    Kneis, Christian; Donelan, Brenda; Berrou, Antoine; Manek-Hönninger, Inka; Robin, Thierry; Cadier, Benoît; Eichhorn, Marc; Kieleck, Christelle

    2015-04-01

    A diode-pumped, actively mode-locked high-power thulium (Tm3+)-doped double-clad silica fiber laser is demonstrated, providing an average output power in mode-locked (continuous wave) operation of 53 W (72 W) with a slope efficiency of 34% (38%). Mode-locking in the 6th-harmonic order was obtained by an acousto-optic modulator driven at 66 MHz without dispersion compensation. The shortest measured output pulse width was 200 ps. Owing to a diffraction grating as cavity end mirror, the central wavelength could be tuned from 1.95 to 2.13 μm. The measured beam quality in mode-locked and continuous wave operation has been close to the diffraction limit. PMID:25831360

  16. Study of the correlation parameters of the surface structure of disordered semiconductors by the two-dimensional DFA and average mutual information methods

    SciTech Connect

    Alpatov, A. V.; Vikhrov, S. P.; Rybina, N. V.

    2015-04-15

    The processes of self-organization of the surface structure of hydrogenated amorphous silicon are studied by the methods of fluctuation analysis and average mutual information on the basis of atomic-force-microscopy images of the surface. It is found that all of the structures can be characterized by a correlation vector and represented as a superposition of harmonic components and noise. It is shown that, under variations in the technological parameters of the production of a-Si:H films, the correlation properties of their structure vary as well. As the substrate temperature is increased, the formation of structural irregularities becomes less efficient; in this case, the length of the correlation vector and the degree of structural ordering increase. It is shown that the procedure based on the method of fluctuation analysis in combination with the method of average mutual information provides a means for studying the self-organization processes in any structures on different length scales.

  17. Relationship Between Selected Strength and Power Assessments to Peak and Average Velocity of the Drive Block in Offensive Line Play.

    PubMed

    Jacobson, Bert H; Conchola, Eric C; Smith, Doug B; Akehi, Kazuma; Glass, Rob G

    2016-08-01

    Jacobson, BH, Conchola, EC, Smith, DB, Akehi, K, and Glass, RG. Relationship between selected strength and power assessments to peak and average velocity of the drive block in offensive line play. J Strength Cond Res 30(8): 2202-2205, 2016-Typical strength training for football includes the squat and power clean (PC) and routinely measured variables include 1 repetition maximum (1RM) squat and 1RM PC along with the vertical jump (VJ) for power. However, little research exists regarding the association between the strength exercises and velocity of an actual on-the-field performance. The purpose of this study was to investigate the relationship of peak velocity (PV) and average velocity (AV) of the offensive line drive block to 1RM squat, 1RM PC, the VJ, body mass (BM), and body composition. One repetition maximum assessments for the squat and PC were recorded along with VJ height, BM, and percent body fat. These data were correlated with PV and AV while performing the drive block. Peal velocity and AV were assessed using a Tendo Power and Speed Analyzer as the linemen fired, from a 3-point stance into a stationary blocking dummy. Pearson product analysis yielded significant (p ≤ 0.05) correlations between PV and AV and the VJ, the squat, and the PC. A significant inverse association was found for both PV and AV and body fat. These data help to confirm that the typical exercises recommended for American football linemen is positively associated with both PV and AV needed for the drive block effectiveness. It is recommended that these exercises remain the focus of a weight room protocol and that ancillary exercises be built around these exercises. Additionally, efforts to reduce body fat are recommended. PMID:24910958

  18. Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress

    NASA Astrophysics Data System (ADS)

    Yao, Nan; Li, Wei; Zhao, Yihao; Zhong, Li; Liu, Suping; Ma, Xiaoyu

    2015-10-01

    High power semiconductor laser is widely used because of its high transformation efficiency, good working stability, compact volume and simple driving requirements. Laser's lifetime is very long, but tests at high levels of stress can speed up the failure process and shorten the times to failure significantly. So accelerated life test is used here for forecasting the lifetime of 808nm CW GaAs/AlGaAs high power semiconductor laser that has an output power of 1W under 1.04A. Accelerated life test of constant current stress based on the Inverse Power Law Relationship was designed. Tests were conducted under 1.3A, 1.6A and 1.9A at room temperature. It is the first time that this method is used in the domestic research of laser's lifetime prediction. Applying Weibull Distribution to describe the lifetime distribution and analyzing the data of times to failure, characteristics lifetime's functional relationship model with current is achieved. Then the characteristics lifetime under normal current is extrapolated, which is 9473h. Besides, to confirm the validity of the functional relationship model, we conduct an additional accelerated life test under 1.75A. Based on this experimental data we calculated the characteristics lifetime corresponding to 1.75A that is 171h, while the extrapolated characteristics lifetime from the former functional relationship model is 162h. The two results shows 5% deviation that is very low and acceptable, which indicates that the test design is reasonable and authentic.

  19. Scaling-up a liquid water jet laser plasma source to high average power for extreme-ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Vogt, Ulrich; Stiel, Holger; Will, Ingo; Wieland, Marek; Wilhein, Thomas; Nickles, Peter V.; Sandner, Wolfgang

    2001-08-01

    In this article we describe a laser plasma source for Extreme Ultraviolet Lithography (EUVL) based on a liquid water jet target. Although jet targets are known for some time now, no attempts have been made to prove the functionality of the target under conditions similar to an EUVL production-line facility, that means illumination with high average power laser systems (in the multi-kW regime) at repetition rates in the kHz region. Such systems are currently under development. We used the MBI-burst laser to simulate these extreme illumination conditions. We examined the hydrodynamic stability of the target as a function of the laser repetition rate at different average laser powers (0.6kW and 5kW per burst). Additionally, the dependence of the conversion efficiency on pulse duration in the range from 30ps to 3ns was investigated. From our results one can conclude parameters for future design of driver lasers for EUVL systems.

  20. High average power, high repetition rate table-top soft x-ray lasers for applications in nanoscience and nanotechnology

    NASA Astrophysics Data System (ADS)

    Reagan, Brendan; Wernsing, Keith; Baumgarten, Cory; Durivage, Leon; Berrill, Mark; Curtis, Alden; Furch, Federico; Luther, Brad; Woolston, Mark; Patel, Dinesh; Menoni, Carmen; Shlyaptsev, Vyacheslav; Rocca, Jorge

    2014-03-01

    There is great interest in table-top sources of bright coherent soft x-ray radiation for nanoscale applications. We report the demonstration of a compact, high repetition rate soft x-ray laser operating at wavelengths between 10.9nm to 18.9nm, including the generation of 0.15mW average power at λ = 18.9nm and 0.1mW average power at λ = 13.9nm. These short wavelength lasers were driven by an all diode pumped, chirped pulse amplification laser based on cryogenically-cooled Yb:YAG amplifiers that produces 1 Joule, picosecond duration pulses at 100 Hz repetition rate. Irradiation of solid targets results in the production of plasmas with large transient population inversions on the 4d1S0 --> 4p1P1 transition of Ni-like ions. Optimization of this high repetition rate laser combined with the development of high shot capacity, rotating targets has allowed the uninterrupted operation of this soft x-ray laser for hundreds of thousands of consecutive shots, making it suitable for a number of applications requiring high photon flux at short wavelengths. Work was supported by the NSF ERC for Extreme Ultraviolet Science and Technology using equipment developed under NSF Award MRI-ARRA 09-561, and by the AMOS program of the Office of Basic Energy Sciences, US Department of Energy.

  1. Wavelength and average power density dependency of the recrystallization of tooth dentin using a MIR-FEL

    NASA Astrophysics Data System (ADS)

    Heya, Manabu; Awazu, Kunio

    2002-04-01

    Recrystallization of tooth dentin by the application of mid- infrared (MIR) pulsed-laser irradiation is one candidate for a novel, non-invasive treatment for the prevention of tooth decay. Recrystallized dentin functions in a similar way to dental enamel. To recrystallize the dentin effectively and non-invasively it is essential to estimate quantitatively and qualitatively the laser parameters, such as the wavelength and the average power density, required for recrystallization. The laser-tissue interaction is initiated effectively by selective excitation of phosphate acid ions (PO4) in the dentin. Using a tunable, MIR Free Electron Laser (FEL) in the wavelength region of 8.8- 10.6micrometers , corresponding to intense absorption bands due to PO4 vibration modes, we have investigated macroscopically extent of surface modification of dentin, and we have obtained experimental results related to the ablation depth, the MIR absorption spectrum, and the elemental chemical composition. From these results, it was found that (1) the laser parameters at which efficient surface modification, without enhanced ablation effects, occurred were estimated to be approximately in the wavelength and average power density regions of ~9.4- 10.3micrometers and ~10-20 W/cm2, and that (2) in this region PO4 vibration modes with lower binding energy were preferentially excluded from the dentin.

  2. 180W at 1kHz, 532nm SHG from LBO crystals using high average power Nd:YAG laser

    NASA Astrophysics Data System (ADS)

    Tamaoki, Yoshinori; Kato, Yoshinori; Iyama, Koichi; Kawashima, Toshiyuki; Miyanaga, Noriaki

    2014-02-01

    We have developed high average power MOPA laser system with SHG unit on the table top size (3 × 1.5m). At the wavelength 1064nm has been obtained the max average output power of 715W. We have achieved the average power 180W at the wavelength 532nm, the pulse width of about 100ns, the frequency of 1kHz. And the power efficiency of the SHG from the wavelength of 1064nm to 532nm was obtained about 25.6%.

  3. Modelling of ELM-averaged power exhaust on JET using the EDGE2D code with variable transport coefficients

    NASA Astrophysics Data System (ADS)

    Kirnev, G.; Fundamenski, W.; Corrigan, G.

    2007-06-01

    The scrape-off layer (SOL) of the JET tokamak has been modelled using a two-dimensional plasma/neutral code, EDGE2D/NIMBUS, with variable transport coefficients, chosen according to nine candidate theories for radial heat transport in the SOL. Comparison of the radial power width on the outer divertor plates, λq, predicted by modelling and measured experimentally in L-mode and ELM-averaged H-mode at JET is presented. Transport coefficients based on classical and neo-classical ion conduction are found to offer the best agreement with experimentally measured λq magnitude and scaling with target power, upstream density and toroidal field. These results reinforce the findings of an earlier study, based on a simplified model of the SOL (Chankin 1997 Plasma Phys. Control. Fusion 39 1059), and support the earlier estimate of the power width at the entrance of the outer divertor volume in ITER, λq ap 4 mm mapped to the outer mid-plane (Fundamenski et al 2004 Nucl. Fusion 44 20).

  4. Duration-tunable picosecond source at 560  nm with watt-level average power.

    PubMed

    Runcorn, T H; Murray, R T; Kelleher, E J R; Popov, S V; Taylor, J R

    2015-07-01

    A pulse source at 560 nm that is tunable in duration between 50 ps and 2.7 ns with >1  W of average power and near diffraction-limited beam quality is demonstrated. The source is based on efficient (up to 50%) second-harmonic generation in a periodically poled lithium tantalate crystal of a linearly polarized fiber-integrated Raman amplifier operating at 1120 nm. A duration-tunable ytterbium master-oscillator power-fiber amplifier is used to pulse-pump the Raman amplifier, which is seeded by a continuous-wave distributed-feedback laser diode at 1120 nm. The performance of the system using two different master oscillator schemes is compared. A pulse energy of up to 765 nJ is achieved with a conversion efficiency of 25% from the ytterbium fiber pump, demonstrating a compact and turn-key architecture for obtaining high peak-power radiation at 560 nm. PMID:26125373

  5. Process optimization in high-average-power ultrashort pulse laser microfabrication: how laser process parameters influence efficiency, throughput and quality

    NASA Astrophysics Data System (ADS)

    Schille, Joerg; Schneider, Lutz; Loeschner, Udo

    2015-09-01

    In this paper, laser processing of technical grade stainless steel and copper using high-average-power ultrashort pulse lasers is studied in order to gain deeper insight into material removal for microfabrication. A high-pulse repetition frequency picosecond and femtosecond laser is used in conjunction with high-performance galvanometer scanners and an in-house developed two-axis polygon scanner system. By varying the processing parameters such as wavelength, pulse length, fluence and repetition rate, cavities of standardized geometry are fabricated and analyzed. From the depths of the cavities produced, the ablation rate and removal efficiency are estimated. In addition, the quality of the cavities is evaluated by means of scanning electron microscope micrographs or rather surface roughness measurements. From the results obtained, the influence of the machining parameters on material removal and machining quality is discussed. In addition, it is shown that both material removal rate and quality increase by using femtosecond compared to picosecond laser pulses. On stainless steel, a maximum throughput of 6.81 mm3/min is achieved with 32 W femtosecond laser powers; if using 187 W picosecond laser powers, the maximum is 15.04 mm3/min, respectively. On copper, the maximum throughputs are 6.1 mm3/min and 21.4 mm3/min, obtained with 32 W femtosecond and 187 W picosecond laser powers. The findings indicate that ultrashort pulses in the mid-fluence regime yield most efficient material removal. In conclusion, from the results of this analysis, a range of optimum processing parameters are derived feasible to enhance machining efficiency, throughput and quality in high-rate micromachining. The work carried out here clearly opens the way to significant industrial applications.

  6. Design and development of a 6 MW peak, 24 kW average power S-band klystron

    SciTech Connect

    Joshi, L.M.; Meena, Rakesh; Nangru, Subhash; Kant, Deepender; Pal, Debashis; Lamba, O.S.; Jindal, Vishnu; Jangid, Sushil Kumar; Chakravarthy, D.P.; Dixit, Kavita

    2011-07-01

    A 6 MW peak, 24 kW average power S-band Klystron is under development at CEERI, Pilani under an MoU between BARC and CEERI. The design of the klystron has been completed. The electron gun has been designed using TRAK and MAGIC codes. RF cavities have been designed using HFSS and CST Microwave Studio while the complete beam wave interaction simulation has been done using MAGIC code. The thermal design of collector and RF window has been done using ANSYS code. A Gun Collector Test Module (GCTM) was developed before making actual klystron to validate gun perveance and thermal design of collector. A high voltage solid state pulsed modulator has been installed for performance valuation of the tube. The paper will cover the design aspects of the tube and experimental test results of GCTM and klystron. (author)

  7. A high-average power tapered FEL amplifier at submillimeter frequencies using sheet electron beams and short-period wigglers

    SciTech Connect

    Bidwell, S.W.; Radack, D.J.; Antonsen, T.M. Jr.; Booske, J.H.; Carmel, Y.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Latham, P.E.; Zhang, Z.X.

    1990-01-01

    A high-average-power FEL amplifier operating at submillimeter frequencies is under development at the University of Maryland. Program goals are to produce a CW, {approximately}1 MW, FEL amplifier source at frequencies between 280 GHz and 560 GHz. To this end, a high-gain, high-efficiency, tapered FEL amplifier using a sheet electron beam and a short-period (superconducting) wiggler has been chosen. Development of this amplifier is progressing in three stages: (1) beam propagation through a long length ({approximately}1 m) of short period ({lambda}{sub {omega}} = 1 cm) wiggler, (2) demonstration of a proof-of-principle amplifier experiment at 98 GHz, and (3) designs of a superconducting tapered FEL amplifier meeting the ultimate design goal specifications. 17 refs., 1 fig., 1 tab.

  8. [Study on packaging-induced stress in 4 mm cavity length high-power single emitter semiconductor laser].

    PubMed

    Zhang, Yong; Yang, Rui-xia; An, Zhen-feng; Xu, Hui-wu

    2014-06-01

    To reduce packaging-induced stress of long cavity length high-power single emitter semiconductor laser, the relationship between the stress and the wavelength shift was deduced on the basis of the theory that the stress can change the band gap. A method was developed for quantitatively calculating the stress by measuring the emission spectrum of the laser under pulse conditions. The results show that the soldering quality is a critical factor affecting thermal stress. The difference in stress can exceed 300 MPa due to the difference in soldering quality. By optimizing the reflowing soldering curve of the laser, the stress of the laser drops from 129.7 to 53.4 MPa. This method can also effectively solve the problem that the stress varies with storage time. This work demonstrates that the measurement and analysis of the emission spectrum of the laser can provide a useful method to study packaging stress of the high-power single emitter semiconductor laser. It is also an available means to evaluate and analyze soldering quality. PMID:25358141

  9. Femtosecond mode-locked holmium fiber laser pumped by semiconductor disk laser.

    PubMed

    Chamorovskiy, A; Marakulin, A V; Ranta, S; Tavast, M; Rautiainen, J; Leinonen, T; Kurkov, A S; Okhotnikov, O G

    2012-05-01

    We report on a 2085 nm holmium-doped silica fiber laser passively mode-locked by semiconductor saturable absorber mirror and carbon nanotube absorber. The laser, pumped by a 1.16 μm semiconductor disk laser, produces 890 femtosecond pulses with the average power of 46 mW and the repetition rate of 15.7 MHz. PMID:22555700

  10. High speed laser drilling of metals using a high repetition rate, high average power ultrafast fiber CPA system.

    PubMed

    Ancona, A; Röser, F; Rademaker, K; Limpert, J; Nolte, S; Tünnermann, A

    2008-06-01

    We present an experimental study on the drilling of metal targets with ultrashort laser pulses at high repetition rates (from 50 kHz up to 975 kHz) and high average powers (up to 68 Watts), using an ytterbium-doped fiber CPA system. The number of pulses to drill through steel and copper sheets with thicknesses up to 1 mm have been measured as a function of the repetition rate and the pulse energy. Two distinctive effects, influencing the drilling efficiency at high repetition rates, have been experimentally found and studied: particle shielding and heat accumulation. While the shielding of subsequent pulses due to the ejected particles leads to a reduced ablation efficiency, this effect is counteracted by heat accumulation. The experimental data are in good qualitative agreement with simulations of the heat accumulation effect and previous studies on the particle emission. However, for materials with a high thermal conductivity as copper, both effects are negligible for the investigated processing parameters. Therefore, the full power of the fiber CPA system can be exploited, which allows to trepan high-quality holes in 0.5mm-thick copper samples with breakthrough times as low as 75 ms. PMID:18545607

  11. A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

    NASA Astrophysics Data System (ADS)

    Kiumarsi, Hamid; Mizuochi, Yutaka; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2012-02-01

    A three-stage inverter-based stacked power amplifier (PA) in complementary metal oxide semiconductor (CMOS) process is proposed to overcome low breakdown voltage problem of scaled CMOS technologies. Unlike previous reported stacked PAs which radio frequency choke (RFC) was inevitable, we proposed stacked nMOS and pMOS transistors which effectively eliminates use of RFC. By properly setting self-biased circuits' and transistors' parameters, output impedance could reach up to 50 Ω which together with not employing the RFC makes this topology very appealing for the scalable PA realization. As a proof of concept, a three-stage PA using 65 nm CMOS technology is implemented. With a 6 V power supply for the third stage, the fabricated PA shows a small-signal gain of 36 dB, a saturated output power of 16 dBm and a maximum power added efficiency of 10% at 1 GHz. Using a 7.5 V of power supply, saturated output power reaches 18 dBm. To the best of our knowledge, this is the first reported inverter-based stacked PA.

  12. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

    1989-01-01

    A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

  13. High-average-power 2 μm few-cycle optical parametric chirped pulse amplifier at 100 kHz repetition rate.

    PubMed

    Shamir, Yariv; Rothhardt, Jan; Hädrich, Steffen; Demmler, Stefan; Tschernajew, Maxim; Limpert, Jens; Tünnermann, Andreas

    2015-12-01

    Sources of long wavelengths few-cycle high repetition rate pulses are becoming increasingly important for a plethora of applications, e.g., in high-field physics. Here, we report on the realization of a tunable optical parametric chirped pulse amplifier at 100 kHz repetition rate. At a central wavelength of 2 μm, the system delivered 33 fs pulses and a 6 W average power corresponding to 60 μJ pulse energy with gigawatt-level peak powers. Idler absorption and its crystal heating is experimentally investigated for a BBO. Strategies for further power scaling to several tens of watts of average power are discussed. PMID:26625047

  14. Simulating Field-Scale Moisture Flow Using a Combined Power-Averaging and Tensorial Connectivity-Tortuosity Approach

    SciTech Connect

    Zhang, Z. F.; Khaleel, Raziuddin

    2010-09-02

    Various stochastic methods have been developed over the past two decades to estimate effective unsaturated hydraulic properties. We develop in this paper an alternative practical approach to estimate three-dimensional effective unsaturated hydraulic conductivity via a combined power-averaging and tensorial connectivity-tortuosity (PA-TCT) model. An application of the new approach to data collected at a field injection site suggests that the PA-TCT model provides 1) a reasonable framework for upscaling core-scale measurements and 2) an accurate simulation of moisture flow in a heterogeneous vadose zone. The heterogeneous media at the injection site is composed of multiple geologic units, each of which is represented by an anisotropic equivalent homogeneous medium (EHM). The directional effective hydraulic conductivity for each anisotropic EHM was determined by upscaling the laboratory-measured hydraulic properties with the combined PA-TCT approach. A larger difference between the power values in the horizontal and vertical directions indicates a larger macroscopic anisotropy in unsaturated hydraulic conductivity. A moment analysis was used to quantify the center of mass and the spread of the moisture content difference. Numerical simulations showed that, if the flow domain were treated as being isotropic, the vertical migration was significantly overestimated while the lateral movement was underestimated when compared to observations. To the contrary, if the media was treated as perfectly stratified, the lateral moisture movement was considerably overestimated while the vertical movement was underestimated. However, when the flow domain was modeled as being mildly anisotropic with the PA-TCT based parameters, the model can successfully predict the moisture flow and the simulated plume matched the observed moisture plume the best.

  15. High-power ({gt}0.9 W cw) diffraction-limited semiconductor laser based on a fiber Bragg grating external cavity

    SciTech Connect

    Cornwell, D.M. , Jr.; Thomas, H.J.

    1997-02-01

    We have developed a high-power ({gt}0.9 W cw) diffraction-limited semiconductor laser based on a tapered semiconductor optical amplifier using a fiber Bragg grating in an external cavity configuration. Frequency-selective feedback from the fiber grating is injected into the amplifier via direct butt coupling through a single mode fiber, resulting in a spectrally stable and narrow ({lt}0.3 nm) high-power laser for solid-state laser pumping, laser remote sensing, and optical communications. {copyright} {ital 1997 American Institute of Physics.}

  16. Improvement of deoxidization efficiency of nitric monoxide by shortening pulse width of semiconductor opening switch pulse power generator

    NASA Astrophysics Data System (ADS)

    Kakuta, Takatoshi; Yagi, Ippei; Takaki, Koichi

    2015-01-01

    The deoxidization efficiency of nitric monoxide (NO) was improved by shortening the pulse width of the voltage applied to a corona reactor. The deoxidization efficiency of NO was evaluated as the NO removal efficiency in nitrogen (N2) gas containing 200 ppm NO. The corona reactor had a coaxial geometry and consisted of center high-voltage wire and outer grounded cylinder electrodes. A nanosecond high-voltage pulse was generated using an inductive energy storage pulse power circuit with a semiconductor opening switch and was applied to the center wire electrode in the corona reactor. Fast recovery diodes were utilized as a semiconductor opening switch. The pulse width of the applied voltage was reduced from 21 to 14 ns with the arrester connected in parallel to the reactor. The energy efficiency for NO removal was improved from 8.2 to 35.7 g kW-1 h-1 with the arrester connected. The pulse width was also reduced to 8 ns by optimizing the circuit parameters. It was confirmed from observation with an intensified charge-coupled device (ICCD) camera that the streamer corona discharge transited to a glowlike discharge after the streamer propagated from the center wire electrode to the outer cylinder electrode. The duration of the glowlike phase was reduced with the arrester connected. The energy consumed in the glowlike phase was also reduced from 15.7 to 4.6 mJ with the arrester connected.

  17. Ultrashort pulse laser drilling of metals using a high-repetition rate high average power fiber CPA system

    NASA Astrophysics Data System (ADS)

    Ancona, A.; Jauregui, C.; Döring, S.; Röser, F.; Limpert, J.; Nolte, S.; Tünnermann, A.

    2009-02-01

    We present an experimental study of the drilling of metal targets with ultrashort laser pulses with pulse durations from 800 fs to 19 ps at repetition rates up to 1 MHz, average powers up to 70 Watts, using an Ytterbium-doped fiber CPA system. Particle shielding and heat accumulation have been found to influence the drilling efficiency at high repetition rates. Particle shielding causes an increase in the number of pulses for breakthrough. It occurs at a few hundred kHz, depending on the pulse energy and duration. The heat accumulation effect is noticed at higher repetition rates. Although it overbalances the particle shielding thus making the drilling process faster, heat accumulation is responsible for the formation of a large amount of molten material that limits the hole quality. The variations of the pulse duration reveal that heat accumulation starts at higher repetition rates for shorter pulse lengths. This is in agreement with the observed higher ablation efficiency with shorter pulse duration. Thus, the shorter pulses might be advantageous if highest precision and processing speed is required.

  18. Development of a 33 kV, 20 A long pulse converter modulator for high average power klystron

    NASA Astrophysics Data System (ADS)

    Reghu, T.; Mandloi, V.; Shrivastava, Purushottam

    2014-05-01

    Research, design, and development of high average power, long pulse modulators for the proposed Indian Spallation Neutron Source are underway at Raja Ramanna Centre for Advanced Technology. With this objective, a prototype of long pulse modulator capable of delivering 33 kV, 20 A at 5 Hz repetition rate has been designed and developed. Three Insulated Gate Bipolar Transistors (IGBT) based switching modules driving high frequency, high voltage transformers have been used to generate high voltage output. The IGBT based switching modules are shifted in phase by 120° with respect to each other. The switching frequency is 25 kHz. Pulses of 1.6 ms pulse width, 80 μs rise time, and 70 μs fall time have been achieved at the modulator output. A droop of ±0.6% is achieved using a simple segmented digital droop correction technique. The total fault energy transferred to the load during fault has been measured by conducting wire burn tests and is found to be within 3.5 J.

  19. Peak-to-average power ratio reduction in all-optical orthogonal frequency division multiplexing system using rotated constellation approach

    NASA Astrophysics Data System (ADS)

    Hmood, Jassim K.; Noordin, Kamarul A.; Arof, Hamzah; Harun, Sulaiman W.

    2015-10-01

    In this paper, a new approach for reducing peak-to-average power ratio (PAPR) based on modulated half subcarriers in all-optical OFDM systems with rotated QAM constellation is presented. To reduce the PAPR, the odd subcarriers are modulated with rotated QAM constellation, while the even subcarriers are modulated with standard QAM constellation. The impact of the rotation angle on the PAPR is mathematically modeled. The effect of PAPR reduction on the system performance is investigated by simulating the all-optical OFDM system, which uses optical coupler-based inverse fast Fourier transform (IFFT)/fast Fourier transform (FFT). The all-optical system is numerically demonstrated with 29 subcarriers. Each subcarrier is modulated by a QAM modulator at a symbol rate of 25 Gsymbol/s. The results reveal that PAPR is reduced with increasing the angle of rotation. The PAPR reduction can reach about 0.8 dB when the complementary cumulative distribution function (CCDF) is 1 × 10-3. Furthermore, both the nonlinear phase noise and the optical signal-to-noise ratio (OSNR) of the system are improved in comparison with the original all-optical OFDM without PAPR reduction.

  20. A pure permanent magnet-two plane focusing-tapered wiggler for a high average power FEL

    SciTech Connect

    Fortgang, C.M.

    1996-11-01

    A high-average power FEL is under construction at Los Alamos. The FEL will have aspects of both an oscillator and a SASE (self-amplified spontaneous emission) device. That is, a high-gain and high- extraction efficiency wiggler will be used with a very low-Q optical resonator. FEL simulations reveal that a tapered wiggler with two- plane focusing is required to obtain desired performance. The wiggler is comprised of a I meter long untapered section followed by a 1 meter tapered section. The taper is achieved with the magnetic gap and not the wiggler period which is constant at 2 cm. The gap is tapered from 5.9 mm to 8.8 mm. The, gap, rather than the period, is tapered to avoid vignetting of the 16 {mu}m optical beam. Two-plane focusing is necessary to maintain high current density and thus high gain through out the 2 meter long wiggler. Several magnetic designs have been considered for the wiggler. The leading candidate approach is a pure permanent wiggler with pole faces that are cut to roughly approximate the classical parabolic pole face design. Focusing is provided by the sextupole component of the wiggler magnetic field and is often called ``natural`` or ``betatron`` focusing. Details of the design will be presented.

  1. Development of a 33 kV, 20 A long pulse converter modulator for high average power klystron

    SciTech Connect

    Reghu, T.; Mandloi, V.; Shrivastava, Purushottam

    2014-05-15

    Research, design, and development of high average power, long pulse modulators for the proposed Indian Spallation Neutron Source are underway at Raja Ramanna Centre for Advanced Technology. With this objective, a prototype of long pulse modulator capable of delivering 33 kV, 20 A at 5 Hz repetition rate has been designed and developed. Three Insulated Gate Bipolar Transistors (IGBT) based switching modules driving high frequency, high voltage transformers have been used to generate high voltage output. The IGBT based switching modules are shifted in phase by 120° with respect to each other. The switching frequency is 25 kHz. Pulses of 1.6 ms pulse width, 80 μs rise time, and 70 μs fall time have been achieved at the modulator output. A droop of ±0.6% is achieved using a simple segmented digital droop correction technique. The total fault energy transferred to the load during fault has been measured by conducting wire burn tests and is found to be within 3.5 J.

  2. Development of a 33 kV, 20 A long pulse converter modulator for high average power klystron.

    PubMed

    Reghu, T; Mandloi, V; Shrivastava, Purushottam

    2014-05-01

    Research, design, and development of high average power, long pulse modulators for the proposed Indian Spallation Neutron Source are underway at Raja Ramanna Centre for Advanced Technology. With this objective, a prototype of long pulse modulator capable of delivering 33 kV, 20 A at 5 Hz repetition rate has been designed and developed. Three Insulated Gate Bipolar Transistors (IGBT) based switching modules driving high frequency, high voltage transformers have been used to generate high voltage output. The IGBT based switching modules are shifted in phase by 120° with respect to each other. The switching frequency is 25 kHz. Pulses of 1.6 ms pulse width, 80 μs rise time, and 70 μs fall time have been achieved at the modulator output. A droop of ±0.6% is achieved using a simple segmented digital droop correction technique. The total fault energy transferred to the load during fault has been measured by conducting wire burn tests and is found to be within 3.5 J. PMID:24880410

  3. Experimental assessment of blade tip immersion depth from free surface on average power and thrust coefficients of marine current turbine

    NASA Astrophysics Data System (ADS)

    Lust, Ethan; Flack, Karen; Luznik, Luksa

    2014-11-01

    Results from an experimental study on the effects of marine current turbine immersion depth from the free surface are presented. Measurements are performed with a 1/25 scale (diameter D = 0.8m) two bladed horizontal axis turbine towed in the large towing tank at the U.S. Naval Academy. Thrust and torque are measured using a dynamometer, mounted in line with the turbine shaft. Shaft rotation speed and blade position are measured using a shaft position indexing system. The tip speed ratio (TSR) is adjusted using a hysteresis brake which is attached to the output shaft. Two optical wave height sensors are used to measure the free surface elevation. The turbine is towed at 1.68 m/s, resulting in a 70% chord based Rec = 4 × 105. An Acoustic Doppler Velocimeter (ADV) is installed one turbine diameter upstream of the turbine rotation plane to characterize the inflow turbulence. Measurements are obtained at four relative blade tip immersion depths of z/D = 0.5, 0.4, 0.3, and 0.2 at a TSR value of 7 to identify the depth where free surface effects impact overall turbine performance. The overall average power and thrust coefficient are presented and compared to previously conducted baseline tests. The influence of wake expansion blockage on the turbine performance due to presence of the free surface at these immersion depths will also be discussed.

  4. Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier.

    PubMed

    Chi, Mingjun; Jensen, Ole Bjarlin; Holm, Jesper; Pedersen, Christian; Andersen, Peter Eskil; Erbert, Götz; Sumpf, Bernd; Petersen, Paul Michael

    2005-12-26

    A high-power narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The external cavity laser system uses a new tapered amplifier with a super-large optical-cavity (SLOC) design that leads to improved performance of the external cavity diode lasers. The laser system is tunable over a 29 nm range centered at 802 nm. As high as 1.95 W output power is obtained at 803.84 nm, and an output power above 1.5 W is achieved from 793 to 812 nm at operating current of 3.0 A. The emission linewidth is below 0.004 nm and the beam quality factor M2 is below 1.3 over the 29 nm tunable range. As an example of application, the laser system is used as a pump source for the generation of 405 nm blue light by single-pass frequency doubling in a periodically poled KTiOPO4. An output power of 24 mW at 405 nm, corresponding to a conversion efficiency of 0.83%/W is attained. PMID:19503273

  5. The Power of Materials Science Tools for Gaining Insights into Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Treat, Neil D.; Westacott, Paul; Stingelin, Natalie

    2015-07-01

    The structure of organic semiconductors can be complex because features from the molecular level (such as molecular conformation) to the micrometer scale (such as the volume fraction and composition of phases, phase distribution, and domain size) contribute to the definition of the optoelectronic landscape of the final architectures and, hence, to device performance. As a consequence, a detailed understanding of how to manipulate molecular ordering, e.g., through knowledge of relevant phase transitions, of the solidification process, of relevant solidification mechanisms, and of kinetic factors, is required to induce the desired optoelectronic response. In this review, we discuss relevant structural features of single-component and multicomponent systems; provide a case study of the multifaceted structure that polymer:fullerene systems can adopt; and highlight relevant solidification mechanisms such as nucleation and growth, liquid-liquid phase separation, and spinodal decomposition. In addition, cocrystal formation, solid solutions, and eutectic systems are treated and their relevance within the optoelectronic area emphasized.

  6. High-order diffraction gratings for high-power semiconductor lasers

    SciTech Connect

    Vasil'eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N. Shashkin, I. S.; Tarasov, I. S.

    2012-02-15

    A deep diffraction grating with a large period ({approx}2 {mu}m) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating {approx}2 {mu}m deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al{sub 0.3}Ga{sub 0.7}As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

  7. Optical power of semiconductor lasers with a low-dimensional active region

    SciTech Connect

    Asryan, Levon V.; Sokolova, Zinaida N.

    2014-01-14

    A comprehensive analytical model for the operating characteristics of semiconductor lasers with a low-dimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons and holes from a bulk optical confinement region into a quantum-confined active region and an extended set of rate equations is used. We derive a closed-form expression for the internal quantum efficiency as an explicit function of the injection current and parameters of a laser structure. Due to either electron or hole capture delay, the internal efficiency decreases with increasing injection current above the lasing threshold thus causing sublinearity of the light-current characteristic of a laser.

  8. Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Hietala, V.M.; Sloan, L.R.

    1999-02-18

    The power consumption of Radio Frequency (RF) electronics is a significant issue for Wireless systems. Since most wireless systems are portable and thus battery operated, reductions in DC power consumption can significantly reduce the weight and/or increase the battery lifetime of the system. As transmission consumes significantly more power than reception for most Wireless applications, previous efforts have been focused on increasing the efficiency of RF power amplification. These efforts have resulted in large increases in transmit efficiencies with research-grade amplifier efficiencies approaching 100%. In this paper, they describe their efforts on reducing power consumption of reception and other small signal RF functions. Additionally, recent power efficiency measurements on InP HEMT devices for transmission are presented. This work focuses on the needs of today's typical portable Wireless systems, which operate at frequencies up to several GHz.

  9. Octave-spanning OPCPA system delivering CEP-stable few-cycle pulses and 22 W of average power at 1 MHz repetition rate.

    PubMed

    Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Limpert, Jens; Tünnermann, Andreas

    2012-05-01

    We report on an OPCPA system delivering CEP-stable pulses with a pulse duration of only 1.7 optical cycles at 880 nm wavelength. This pulse duration is achieved by the generation, optical parametric amplification and compression of a full optical octave of bandwidth. The system is pumped by a high average power Yb-fiber laser system, which allows for operation of the OPCPA at up to 1 MHz repetition rate and 22 W of average output power. Further scaling towards single-cycle pulses, higher energy and output power is discussed. PMID:22565712

  10. Generation of more than 40  W of average output power from a passively Q-switched Yb-doped fiber laser.

    PubMed

    Chakravarty, Usha; Kuruvilla, Antony; Singh, Ravindra; Upadhyaya, B N; Bindra, K S; Oak, S M

    2016-01-10

    We report on the generation of 41.6 W of average output power from a passively Q-switched ytterbium-doped fiber laser using Cr4+:YAG crystal as a saturable absorber (SA). This is the highest average power from passively Q-switched fiber lasers reported so far in the literature, to our knowledge, and it has been achieved by using a specially designed T-type double-end pumping configuration. Variation in average output power, pulse energy, pulse duration, pulse frequency, and pulse-to-pulse stability has also been studied using SAs of different linear transmissions. The effect of an intracavity SA on self-pulsing dynamics was also investigated and it was observed that, at lower input pump power near threshold, the presence of an SA enhances the peak power of relaxation oscillations to trigger the generation of stimulated Raman scattering in the gain fiber. With an increase in pump power, when the passive Q-switching threshold is reached, high peak power random self-pulses regenerate into low amplitude regular Q-switched pulses. The effect of the length of the gain medium on dual-wavelength generation at very low input pump power and broadband generation at sufficiently higher pump power has also been explored. PMID:26835764

  11. Efficient spectral broadening in the 100-W average power regime using gas-filled kagome HC-PCF and pulse compression.

    PubMed

    Emaury, Florian; Saraceno, Clara J; Debord, Benoit; Ghosh, Debashri; Diebold, Andreas; Gèrôme, Frederic; Südmeyer, Thomas; Benabid, Fetah; Keller, Ursula

    2014-12-15

    We present nonlinear pulse compression of a high-power SESAM-modelocked thin-disk laser (TDL) using an Ar-filled hypocycloid-core kagome hollow-core photonic crystal fiber (HC-PCF). The output of the modelocked Yb:YAG TDL with 127 W average power, a pulse repetition rate of 7 MHz, and a pulse duration of 740 fs was spectrally broadened 16-fold while propagating in a kagome HC-PCF containing 13 bar of static argon gas. Subsequent compression tests performed using 8.4% of the full available power resulted in a pulse duration as short as 88 fs using the spectrally broadened output from the fiber. Compressing the full transmitted power through the fiber (118 W) could lead to a compressed output of >100  W of average power and >100  MW of peak power with an average power compression efficiency of 88%. This simple laser system with only one ultrafast laser oscillator and a simple single-pass fiber pulse compressor, generating both high peak power >100  MW and sub-100-fs pulses at megahertz repetition rate, is very interesting for many applications such as high harmonic generation and attosecond science with improved signal-to-noise performance. PMID:25503011

  12. Semiconductor Cubing

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Through Goddard Space Flight Center and Jet Propulsion Laboratory Small Business Innovation Research contracts, Irvine Sensors developed a three-dimensional memory system for a spaceborne data recorder and other applications for NASA. From these contracts, the company created the Memory Short Stack product, a patented technology for stacking integrated circuits that offers higher processing speeds and levels of integration, and lower power requirements. The product is a three-dimensional semiconductor package in which dozens of integrated circuits are stacked upon each other to form a cube. The technology is being used in various computer and telecommunications applications.

  13. Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Xia, Liansheng; Chen, Yi; Liu, Yi; Yang, Chao; Ye, Mao; Deng, Jianjun

    2015-01-01

    The synchronization of 15 parallel high gain gallium arsenide photoconductive semiconductor switches (GaAs PCSS) has been researched aiming to get higher output voltage. Each PCSS is triggered independently by a high power pulse laser diode. The pulse width, energy, peak power, and central wavelength of the laser pulse are approximately 18 ns, 360 μJ, 20 kW, and 905 nm, respectively. In the stacked Blumlein transmission lines structure, the synchronous conduction of 15 parallel GaAs PCSSs has been achieved by offering optimized bias voltage and laser parameters. The method of synchronization calculation is given, and the synchronization of the 15 parallel GaAs PCSSs is measured as 775 ps. Furthermore, influences of the bias voltage, laser parameters on the synchronization are analyzed. In the output terminal, superimposed by the output voltages of 15 Blumlein transmission lines, the total output voltage reaches up to 328 kV, which is the highest output voltage of GaAs PCSSs that has been reported so far.

  14. Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states.

    PubMed

    Bilc, Daniel I; Hautier, Geoffroy; Waroquiers, David; Rignanese, Gian-Marco; Ghosez, Philippe

    2015-04-01

    Thermoelectrics are promising for addressing energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures and the introduction of resonant states were suggested as possible solutions to this paradox, but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly directional character of some orbitals to engineer the band structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principle calculations, the theoretical concept is demonstrated in Fe2YZ Heusler compounds, yielding power factors 4 to 5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting, or photovoltaic applications. PMID:25884131

  15. SEMICONDUCTOR INTEGRATED CIRCUITS: A high-performance low-power CMOS AGC for GPS application

    NASA Astrophysics Data System (ADS)

    Qianqian, Lei; Qiming, Xu; Zhiming, Chen; Yin, Shi; Min, Lin; Hailong, Jia

    2010-02-01

    A wide tuning range, low power CMOS automatic gain control (AGC) with a simple architecture is proposed. The proposed AGC is composed of a variable gain amplifier (VGA), a comparator and a charge pump, and the dB-linear gain is controlled by the charge pump. The AGC was implemented in a 0.18 μm CMOS technology. The dynamic range of the VGA is more than 55 dB, the bandwidth is 30 MHz, and the gain error is lower than ±1.5 dB over the full temperature and gain ranges. It is designed for GPS application and is fed from a single 1.8 V power supply. The AGC power consumption is less than 5 mW, and the area of the AGC is 700 × 450 μm2.

  16. Development and fabrication of improved power transistor switches. [fabrication and manufacturing of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Hower, P. L.; Chu, C. K.

    1976-01-01

    A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

  17. Quaternion Averaging

    NASA Technical Reports Server (NTRS)

    Markley, F. Landis; Cheng, Yang; Crassidis, John L.; Oshman, Yaakov

    2007-01-01

    Many applications require an algorithm that averages quaternions in an optimal manner. For example, when combining the quaternion outputs of multiple star trackers having this output capability, it is desirable to properly average the quaternions without recomputing the attitude from the the raw star tracker data. Other applications requiring some sort of optimal quaternion averaging include particle filtering and multiple-model adaptive estimation, where weighted quaternions are used to determine the quaternion estimate. For spacecraft attitude estimation applications, derives an optimal averaging scheme to compute the average of a set of weighted attitude matrices using the singular value decomposition method. Focusing on a 4-dimensional quaternion Gaussian distribution on the unit hypersphere, provides an approach to computing the average quaternion by minimizing a quaternion cost function that is equivalent to the attitude matrix cost function Motivated by and extending its results, this Note derives an algorithm that deterniines an optimal average quaternion from a set of scalar- or matrix-weighted quaternions. Rirthermore, a sufficient condition for the uniqueness of the average quaternion, and the equivalence of the mininiization problem, stated herein, to maximum likelihood estimation, are shown.

  18. Investigation of the thermally induced laser beam distortion associated with vacuum compressor gratings in high energy and high average power femtosecond laser systems.

    PubMed

    Fourmaux, S; Serbanescu, C; Lecherbourg, L; Payeur, S; Martin, F; Kieffer, J C

    2009-01-01

    We report successful compensation of the thermally induced laser beam distortion associated with high energy 110 mJ and high average power femtosecond laser system of 11 Watts operated with vacuum compressor gratings. To enhance laser-based light source brightness requires development of laser systems with higher energy and higher average power. Managing the high thermal loading on vacuum optical components is a key issue in the implementation of this approach. To our knowledge this is the first time that such thermal induced distortions on the vacuum compressor gratings are characterized and compensated. PMID:19129886

  19. Investigation of the thermally induced laser beam distortion associated with vacuum compressor gratings in high energy and high average power femtosecond laser systems

    PubMed Central

    Fourmaux, S.; Serbanescu, C.; Lecherbourg, L.; Payeur, S.; Martin, F.; Kieffer, J. C.

    2009-01-01

    We report successful compensation of the thermally induced laser beam distortion associated with high energy 110 mJ and high average power femtosecond laser system of 11 Watts operated with vacuum compressor gratings. To enhance laser-based light source brightness requires development of laser systems with higher energy and higher average power. Managing the high thermal loading on vacuum optical components is a key issue in the implementation of this approach. To our knowledge this is the first time that such thermal induced distortions on the vacuum compressor gratings are characterized and compensated. PMID:19129886

  20. Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie

    2011-01-01

    Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

  1. Estimation of the path-averaged wind velocity by cross-correlation of the received power and the shift of laser beam centroid

    NASA Astrophysics Data System (ADS)

    Marakasov, Dmitri A.; Tsvyk, Ruvim S.

    2015-11-01

    We consider the problem of estimation of the average wind speed on atmospheric path from measurements of time series of average power of the laser radiation detected through the receiving aperture and the position of the centroid of the image of the laser beam. It is shown that the mutual correlation function of these series has a maximum, whose position characterizes the average speed of the cross wind on the path. The dependence of the coordinates and magnitude of the maximum of the correlation function from the size of the receiving aperture and the distribution of turbulence along the atmospheric path.

  2. Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact

    NASA Astrophysics Data System (ADS)

    Ji, In‑Hwan; Choi, Young‑Hwan; Kim, Soo‑Seong; Choi, Yearn‑Ik; Han, Min‑Koo

    2006-04-01

    A new power metal oxide semiconductor field effect transistor (MOSFET) with deep body contact (DBC), which improves the avalanche energy capability, is proposed and verified by experimental results. For the experiment, a 60 V, 1 A power MOSFET employing DBC has been fabricated using a complementary metal oxide semiconductor (CMOS) compatible deep Si trench process. Previous simulations show that DBC alters the direction of the current flow from the edge to the bottom of the p-body under unclamped inductive switching (UIS) conditions. DBC also suppresses the activation of the parasitic bipolar transistor due to the reduction of the current density beneath the n+ source. Experimental results show that the ruggedness of the proposed power MOSFET is improved without sacrificing any other electrical characteristics and increasing device area.

  3. Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

    NASA Technical Reports Server (NTRS)

    Wagner, L. J.

    1977-01-01

    The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

  4. Doppler-free spectroscopy of mercury at 253.7 nm using a high-power, frequency-quadrupled, optically pumped external-cavity semiconductor laser.

    PubMed

    Paul, Justin; Kaneda, Yushi; Wang, Tsuei-Lian; Lytle, Christian; Moloney, Jerome V; Jones, R Jason

    2011-01-01

    We have developed a stable, high-power, single-frequency optically pumped external-cavity semiconductor laser system and generate up to 125 mW of power at 253.7 nm using successive frequency doubling stages. We demonstrate precision scanning and control of the laser frequency in the UV to be used for cooling and trapping of mercury atoms. With active frequency stabilization, a linewidth of <60 kHz is measured in the IR. Doppler-free spectroscopy and stabilization to the 6(1)S(0)-6(3)P(1) mercury transition at 253.7 nm is demonstrated. To our knowledge, this is the first demonstration of Doppler-free spectroscopy in the deep UV based on a frequency-quadrupled, high-power (>1 W) optically pumped semiconductor laser system. The results demonstrate the utility of these devices for precision spectroscopy at deep-UV wavelengths. PMID:21209687

  5. Design of a thin disk amplifier with extraction during pumping for high peak and average power Ti:Sa systems (EDP-TD).

    PubMed

    Chvykov, Vladimir; Nagymihaly, Roland S; Cao, Huabao; Kalashnikov, Mikhail; Osvay, Karoly

    2016-02-22

    Combination of the scheme of extraction during pumping (EDP) and the Thin Disk (TD) technology is presented to overcome the limitations associated with thermal cooling of crystal and transverse amplified spontaneous emission in high average power laser systems based on Ti:Sa amplifiers. The optimized design of high repetition rate 1-10 PW Ti:Sapphire EDP-TD power amplifiers are discussed, including their thermal dynamic behavior. PMID:26907029

  6. SEMICONDUCTOR INTEGRATED CIRCUITS: A low power automatic gain control loop for a receiver

    NASA Astrophysics Data System (ADS)

    Guofeng, Li; Zhiqing, Geng; Nanjian, Wu

    2010-09-01

    This paper proposes a new structure to lower the power consumption of a variable gain amplifier (VGA) and keep the linearity of the VGA unchanged. The structure is used in a high rate amplitude-shift keying (ASK) based IF-stage. It includes an automatic gain control (AGC) loop and ASK demodulator. The AGC mainly consists of six-stage VGAs. The IF-stage is realized in 0.18 μm CMOS technology. The measurement results show that the power consumption of the whole system is very low. The system consumes 730 μA while operating at 1.8 V. The minimum ASK signal the system could detect is 0.7 mV (peak to peak amplitude).

  7. High-power ultralow-noise semiconductor external cavity lasers based on low-confinement optical waveguide gain media

    NASA Astrophysics Data System (ADS)

    Juodawlkis, Paul W.; Loh, William; O'Donnell, Frederick J.; Brattain, Michael A.; Plant, Jason J.

    2010-02-01

    For the past several years, we have been developing a new class of high-power, low-noise semiconductor optical gain medium based on the slab-coupled optical waveguide (SCOW) concept. The key characteristics of the SCOW design are (i) large (> 5 x 5 μm), symmetric, fundamental-transverse-mode operation attained through a combination of coupledmode filtering and low index-contrast, (ii) very low optical confinement factor (Γ ~ 0.3-0.5%), and (iii) low excessoptical loss (αi ~ 0.5 cm-1). The large transverse mode and low confinement factor enables SCOW lasers (SCOWLs) and amplifiers (SCOWAs) having Watt-class output power. The low confinement factor also dictates that the waveguide length be very large (0.5-1 cm) to achieve useful gain, which provides the benefits of small ohmic and thermal resistance. In this paper, we review the operating principles and performance of the SCOW gain medium, and detail its use in 1550-nm single-frequency SCOW external cavity lasers (SCOWECLs). The SCOWECL consists of a doublepass, curved-channel InGaAlAs quantum-well SCOWA and a narrowband (2.5 GHz) fiber Bragg grating (FBG) external cavity. We investigate the impact of the cavity Q on SCOWECL performance by varying the FBG reflectivity. We show that a bench-top SCOWECL having a FBG reflectivity of R = 10% (R = 20%) has a maximum output power of 450 mW (400 mW), linewidth of 52 kHz (28 kHz), and RIN at 2-MHz offset frequency of -155 dB/Hz (-165 dB/Hz).

  8. High-average-power Nd:YAG planar waveguide laser that is face pumped by 10 laser diode bars.

    PubMed

    Lee, J R; Baker, H J; Friel, G J; Hilton, G J; Hall, D R

    2002-04-01

    A planar waveguide Nd:YAG laser is pumped with 430 W of power from 10 laser diode bars to produce a multimode output power of 150 W at an optical efficiency of 35%. Use of a hybrid resonator of the positive-branch confocal unstable type for the lateral axis and of one of the near-case I waveguide type for the transverse axis increased the laser brightness by a factor of ~26 with only 12% less power than in the multimode case. PMID:18007853

  9. Superfluorescence from photoexcited semiconductor quantum wells: Magnetic field, temperature, and excitation power dependence

    NASA Astrophysics Data System (ADS)

    Cong, Kankan; Wang, Yongrui; Kim, Ji-Hee; Noe, G. Timothy; McGill, Stephen A.; Belyanin, Alexey; Kono, Junichiro

    2015-06-01

    Superfluorescence (SF) is a many-body process in which a macroscopic polarization spontaneously builds up from an initially incoherent ensemble of excited dipoles and then cooperatively decays, producing a delayed pulse of coherent radiation. SF arising from electron-hole recombination has recently been observed in In0.2Ga0.8As /GaAs quantum wells [G. T. Noe et al., Nature Phys. 8, 219 (2012), 10.1038/nphys2207 and J.-H. Kim et al., Sci. Rep. 3, 3283 (2013), 10.1038/srep03283], but its observability conditions have not been fully established. Here, by performing magnetic field (B ), temperature (T ), and pump power (P ) dependent studies of SF intensity, linewidth, and delay time through time-integrated and time-resolved magnetophotoluminescence spectroscopy, we have mapped out the B -T -P region in which SF is observable. In general, SF can be observed only at sufficiently low temperatures, sufficiently high magnetic fields, and sufficiently high laser powers with characteristic threshold behavior. We provide theoretical insights into these behaviors based primarily on considerations on how the growth rate of macroscopic coherence depends on these parameters. These results provide fundamental new insight into electron-hole SF, highlighting the importance of Coulomb interactions among photogenerated carriers as well as various scattering processes that are absent in SF phenomena in atomic and molecular systems.

  10. Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

    NASA Astrophysics Data System (ADS)

    Walker, A. W.; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D.

    2016-04-01

    A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2-3 × 1017 cm-3) for an injected excess carrier concentration below 4 × 1012 cm-3. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

  11. High-frequency performances of superjunction laterally diffused metal-oxide-semiconductor transistors for RF power applications

    NASA Astrophysics Data System (ADS)

    Chen, Bo-Yuan; Chen, Kun-Ming; Chiu, Chia-Sung; Huang, Guo-Wei; Chang, Edward Yi

    2016-04-01

    This paper presents the dc and high-frequency performances of laterally diffused metal-oxide-semiconductor (LDMOS) transistors with superjunction (SJ) structures. The SJ-LDMOS transistors were fabricated using a 0.5-µm CMOS process. By utilizing a modified SJ/RESURF layout (Type I) or a tapered SJ layout (Type II) in our devices, better high-frequency performances and higher breakdown voltages are achieved compared with conventional SJ counterpart, owing to the suppression of the substrate-assisted depletion effect and the reduction of the drain resistance. For Type I device with an optimal SJ layout dimension, the cutoff frequency and the breakdown voltage are 3.7 GHz and 68 V, respectively. For Type II device with a smallest p-pillar width near the drain, they can be enhanced further and reach to 4.9 GHz and 83 V. These experimental results suggest that the SJ-LDMOS can be used in the RF power amplifiers.

  12. Difference-frequency mixing in AgGaS(2) by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm.

    PubMed

    Simon, U; Tittel, F K; Goldberg, L

    1993-11-15

    As much as 47 microW of cw infrared radiation and 89 microW of pulsed infrared radiation, tunable near 4.3 microm, have been generated by mixing the outputs of a high-power tapered semiconductor amplifier at 858 nm (signal wave) and a Ti:Al(2)O(3) laser at 715 nm (pump wave) in AgGaS(2). The GaAlAs tapered traveling-wave amplifier delivered as much as 1.5 W of diffraction-limited cw power into the nonlinear crystal. Output powers, conversion efficiencies, and spectral characteristics of this novel midinfrared source are discussed. PMID:19829451

  13. Temporal pulse compression in a xenon-filled Kagome-type hollow-core photonic crystal fiber at high average power.

    PubMed

    Heckl, O H; Saraceno, C J; Baer, C R E; Südmeyer, T; Wang, Y Y; Cheng, Y; Benabid, F; Keller, U

    2011-09-26

    In this study we demonstrate the suitability of Hollow-Core Photonic Crystal Fibers (HC-PCF) for multiwatt average power pulse compression. We spectrally broadened picosecond pulses from a SESAM mode-locked thin disk laser in a xenon gas filled Kagome-type HC-PCF and compressed these pulses to below 250 fs with a hypocycloid-core fiber and 470 fs with a single cell core defect fiber. The compressed average output power of 7.2 W and 10.2 W at a pulse repetition rate of approximately 10 MHz corresponds to pulse energies of 0.7 µJ and 1 µJ and to peak powers of 1.6 MW and 1.7 MW, respectively. Further optimization of the fiber parameters should enable pulse compression to below 50 fs duration at substantially higher pulse energies. PMID:21996856

  14. High-average-power green laser using Nd:YAG amplifier with stimulated Brillouin scattering phase-conjugate pulse-cleaning mirror.

    PubMed

    Tsubakimoto, Koji; Yoshida, Hidetsugu; Miyanaga, Noriaki

    2016-06-13

    We present a high-average-power green laser based on second harmonic conversion of a laser diode-pumped master oscillator Nd:YAG power amplifier system. The power amplifier chain includes a stimulated Brillouin scattering (SBS) cell that was used a phase-conjugate mirror to double-pass scheme. That suppresses the thermal phase distortion and compresses the pulse duration. The fundamental beam output power was 670 W with a pulse width of 7.9 ns. A second harmonic power of 335 W with a 4.8-ns pulse width and 80-mJ pulse energy was produced using a LiB3O5 (LBO) crystal. PMID:27410277

  15. SPECIAL ISSUE DEVOTED TO THE 80TH ANNIVERSARY OF ACADEMICIAN N G BASOV'S BIRTH: High-power single-transverse-mode ridge optical waveguide semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Popovichev, V. V.; Davydova, Evgeniya I.; Marmalyuk, Aleksandr A.; Simakov, A. V.; Uspenskii, Mikhail B.; Chel'nyi, A. A.; Bogatov, Alexandr P.; Drakin, A. E.; Plisyuk, S. A.; Stratonnikov, Aleksei A.

    2002-12-01

    More than 200 mW of a single-transverse-mode cw output power is produced from a semiconductor heterolaser by optimising the waveguide properties of its ridge structure. The laser-beam divergence is close to the diffraction limit and its brightness exceeds 5 × 107 W cm-2 sr-1. The calculated and experimental parameters of the laser beam are coincident with a high accuracy, which allows their reliable simulation.

  16. High peak- and average-power pulse shaped fiber laser in the ns-regime applying step-index XLMA gain fibers

    NASA Astrophysics Data System (ADS)

    Dinger, R.; Grundmann, F.-P.; Hapke, C.; Ruppik, S.

    2014-03-01

    Pulsed fiber lasers and continuous-wave (cw) fiber lasers have become the tool of choice in more and more laser based industrial applications like metal cutting and welding mainly because of their robustness, compactness, high brightness, high efficiency and reasonable costs. However, to further increase the productivity with those laser types there is a great demand for even higher laser power specifications. In this context we demonstrate a pulsed high peak- and averagepower fiber laser in a Master Oscillator Power Amplifier (MOPA) configuration with selectable pulse durations between 1 ns and several hundred nanoseconds. To overcome fiber nonlinearities such as stimulated Raman scattering (SRS) and self-phase-modulation (SPM) flexible Ytterbium doped extra-large mode area (XLMA) step index fibers, prepared by novel powder-sinter technology, have been used as gain fibers. As an example, for 12 ns pulses with a repetition rate of 10 kHz, a pump power limited average laser output power of more than 400 W in combination with peak powers of more than 3.5 MW (close to self-focusing-threshold) has been achieved in stable operation. The potentials of this laser system have been further explored towards longer pulse durations in order to achieve even higher pulse energies by means of pulse shaping techniques. In addition, investigations have been conducted with reduced pulse energies and repetition rates up to 500 kHz and average powers of more than 500 W at nearly diffraction limited beam quality.

  17. Peak Torque and Average Power at Flexion/Extension of the Shoulder and Knee when Using a Mouth Guard in Adults with Mild Midline Discrepancy

    PubMed Central

    Lee, Sang-Yeol; Hong, Min-Ho; Choi, Seung-Jun

    2014-01-01

    [Purpose] This study was conducted to investigate the changes in torque and power during flexion and extension of the shoulder and the knee joints caused by midline correction using mouth guards made from different materials in adults with mild midline discrepancy. [Subjects] The subjects of this study were males (n=12) in their 20s who showed a 3–5 mm difference between the midlines of the upper and lower teeth but had normal masticatory function. [Methods] The torque and average power of the lower limb and upper limb were measured during flexion and extension according to various types of mouth guard. [Results] There were significant differences in relative torque and average power between three conditions (no mouth guard, soft-type mouth guard, and hard-type mouth guard) at shoulder flexion and extension. There were no significant differences in relative torque and average power between the three conditions at knee flexion and extension. [Conclusions] These results suggest that use of a mouth guard is a method by which people with a mild midline discrepancy can improve the stability of the entire body. PMID:25140095

  18. The e-SCRUB Machine: an 800-kV, 500-kW average power pulsed electron beam generator for flue-gas scrubbing

    NASA Astrophysics Data System (ADS)

    Cooper, James R.; Briggs, Ray; Crewson, Walter F.; Johnson, R. D.; Ratafia-Brown, J. A.; Richardson, W. K.; Rienstra, W. W.; Ballard, Perry G.; Cukr, Jeffrey; Cassel, R. L.; Schlitt, Leland; Genuario, R. D.; Morgan, R. D.; Tripoli, G. A.

    1995-03-01

    This paper gives an overview of electron beam dry scrubbing (EBDS) to remove SOx and NOx from flue gases of coal-fired power plants. It also describes the e-SCRUB program, a program currently underway to commercialize this process with an integrated pulsed electron beam. The electron beam, together with injected water and ammonia, causes chemical reactions which convert the SOx and NOx into commercial grade agricultural fertilizer, a usable byproduct. The e-SCRUB facility is a test bed to demonstrate the feasibility and performance of a repetitive, reliable pulsed electron beam generator operating at average power levels of up to 1 MW. This facility contains the electron beam generator and all the auxiliary and support systems required by the machine, including a computer driven central experiment control system, a 100,000 SCFM flowing dry nitrogen load which simulates the characteristics of a power plant flue, and a 2 MVA dedicated electrical service to power the machine. The e-SCRUB electron beam machine is designed to produce an 800 kV pulsed electron beam with a repetition rate of 667 pps. The energy per pulse deposited into the flue gas is approximately 750 J. The pulsed power system converts the utility power input to a 667 pps, 800 kV pulse train which powers the electron gun. The functional units of the pulsed power system will be discussed in the paper, along with some preliminary experimental results.

  19. Scaling c-w electron-beam-pumped rare gas lasers to ultrahigh average power. Final report, 16 May-15 Nov 90

    SciTech Connect

    Not Available

    1991-04-11

    The overall objective of this program is to demonstrate the feasibility of efficiently scaling Ar:Xe lasers to ultra-high average power levels for strategic defense applications. The contractor has experimentally verified that the Ar:Xe laser system, which operates at near-IR wavelengths (1.73 micrometers), can achieve laser efficiencies of 4% with electron beam pumping at pump power densities as low as 10 watts/cc. This new efficient electron beam pumping regime promises cost-effective scaling of Ar:Xe laser systems to multi-megawatt average power levels while maintaining high electrical efficiency (4-6%) and near-diffraction-limited beam quality. In the Phase II effort, detailed experiments will be performed on an electron beam pumped Ar:Xe laser with a closed cycle flow loop at pump power densities of 10-20 W/cc. The objective of these experiments is to validate methods for correction and control of the optical distortions resulting from experiments is to validate methods for correction and control of the optical distortions resulting from CW pumping. Control of thermal distortions will be achieved by optimally contouring the spatial profile of electron beam power deposition in the active volume. With the optimal deposition profile, higher order optical distortions will be negligible and a diffraction limited beam will be obtained after tilt and focus corrections are made. These corrections can be made by a simple local loop by an adaptive optics system in the beam train.

  20. Pre-chirping management of a self-similar Yb-fiber amplifier towards 80 W average power with sub-40 fs pulse generation.

    PubMed

    Zhao, Jian; Li, Wenxue; Wang, Chao; Liu, Yang; Zeng, Heping

    2014-12-29

    We report on the generation of 80-W average power 38-fs laser pulse from a 2-m polarization-maintaining large-mode-area photonic crystal fiber amplifier with high pump absorption coefficient. The pre-chirping management was demonstrated to play a key role on the self-similar amplification. The achieved spectral bandwidth and compressed pulse duration were determined by the interplay between self-phase modulation and finite gain bandwidth. The power scaling in the self-similar fiber amplifier system was eventually limited by the onset of stimulated Raman scattering. PMID:25607187

  1. Femtosecond pulses at 50-W average power from an Yb:YAG planar waveguide amplifier seeded by an Yb:KYW oscillator.

    PubMed

    Leburn, Christopher G; Ramírez-Corral, Cristtel Y; Thomson, Ian J; Hall, Denis R; Baker, Howard J; Reid, Derryck T

    2012-07-30

    We report the demonstration of a high-power single-side-pumped Yb:YAG planar waveguide amplifier seeded by an Yb:KYW femtosecond laser. Five passes through the amplifier yielded 700-fs pulses with average powers of 50 W at 1030 nm. A numerical simulation of the amplifier implied values for the laser transition saturation intensity, the small-signal intensity gain coefficient and the gain bandwidth of 10.0 kW cm(-2), 1.6 cm(-1), and 3.7 nm respectively, and identified gain-narrowing as the dominant pulse-shaping mechanism. PMID:23038288

  2. Generation of 25 ps pulses by self induced mode locking of a single broad area diode laser with 300 mW average output power

    NASA Astrophysics Data System (ADS)

    Skoczowsky, D.; Heuer, A.; Jechow, A.; Menzel, R.

    2007-11-01

    Detailed investigations of the spatiotemporal and spectral emission properties of a high power diode laser are presented. The AR coated laser diode with design wavelength of 940 nm is driven in an external resonator. The laser generates up to 340 mW average output power in a train of picosecond pulses with durations of 25 ps and repetition rates of 2.6 GHz. The mechanism of mode locking is discussed as self pulsation because of the strong correlation between round trip time and repetition rate. The double-sided exponential pulses suggest saturable absorber action.

  3. High average/peak power linearly polarized all-fiber picosecond MOPA seeded by mode-locked noise-like pulses

    NASA Astrophysics Data System (ADS)

    Yu, H. L.; Ma, P. F.; Tao, R. M.; Wang, X. L.; Zhou, P.; Chen, J. B.

    2015-06-01

    The characteristics of mode-locked noise-like pulses generated from a passively mode-locked fiber oscillator are experimentally investigated. By carefully adjusting the two polarization controllers, stable mode-locked noise-like pulse emission with a high radio frequency signal/noise ratio of  >55 dB is successfully achieved, ensuring the safety and possibility of high power amplification. To investigate the amplification characteristics of such pulses, one all-fiber master oscillator power amplifier (MOPA) is built to boost the power and energy of such pulses. Amplified noise-like pulses with average output power of 423 W, repetition rate of 18.71 MHz, pulse energy of 22.61 μJ, pulse duration of 72.1 ps and peak power of 314 kW are obtained. Near diffraction-limited beam is also demonstrated with M2 factor measured at full power operation of ~1.2 in the X and Y directions. The polarization extinction ratio at output power of 183 W is measured to be ~13 dB. To the best of our knowledge, this is the first demonstration of high-power amplification of noise-like pulses and the highest peak power ever reported in all-fiber picosecond MOPAs. The temporal self-compression process of such pulses and high peak power when amplified make it an ideal pump source for generation of high-power supercontinuum. Other potential applications, such as material processing and optical coherent tomography, could also be foreseen.

  4. 1 W average-power 100 MHz repetition-rate 259 nm femtosecond deep ultraviolet pulse generation from ytterbium fiber amplifier.

    PubMed

    Zhou, Xiangyu; Yoshitomi, Dai; Kobayashi, Yohei; Torizuka, Kenji

    2010-05-15

    We demonstrate 1W average-power ultraviolet (UV) femtosecond (fs) ultrashort pulse generation at a wavelength of 259 nm and a repetition rate as high as 100 MHz by quadrupling a fs ytterbium-fiber laser. A cavity-enhanced design is employed for efficient frequency doubling to the UV region. The optical-to-optical efficiency of UV output to the pump diode is 2.6%. PMID:20479859

  5. All-fiber high-average power nanosecond-pulsed master-oscillator power amplifier at 2  μm with mJ-level pulse energy.

    PubMed

    Wang, Xiong; Jin, Xiaoxi; Zhou, Pu; Wang, Xiaolin; Xiao, Hu; Liu, Zejin

    2016-03-10

    We present a high-power nanosecond-pulsed Tm-doped fiber amplifier at 1.971 μm based on a master-oscillator power amplifier (MOPA) configuration. When the repetition rate is 500 kHz and the pulse width is 63.3 ns, the average power reaches 238 W, the peak power reaches 7.06 kW, and the pulse energy is 0.477 mJ. When the pulse train's repetition rate is 300 kHz with a pulse width of 63.7 ns, the average power reaches 197 W, the peak power reaches 9.73 kW, and the pulse energy is 0.66 mJ. When the pulse train's repetition rate is 200 kHz with a pulse width of 58.2 ns, the average power reaches 150 W, the peak power reaches 12.1 kW, and the pulse energy is 0.749 mJ. The spectral linewidths of the pulse trains are 0.15, 0.14, and 0.10 nm for 500 kHz repetition rate, 300 kHz repetition rate, and 200 kHz repetition rate, respectively. To the best of our knowledge, this is the first demonstration of high-power nanosecond-pulsed MOPA at 2 μm with the maximum average power reaching 238 W, the maximum peak power reaching 12.1 kW, and the maximum pulse energy reaching 0.749 mJ. PMID:26974786

  6. The Influence of the Age, the Years of Training, and the BMI on the Average Muscle Power in Male and Female Rowers.

    PubMed

    Mogus, Mate; Fric, Vlasta Orsić; Atalić, Bruno

    2015-12-01

    The aim of the study was to evaluate the influence of the age, the body mass index (BMI), and the years of training on the average muscle power in male and female rowers. The analysis of the testing results of the members of the Rowing club Iktus from Osijek in Croatia was performed. Results were obtained during the regular yearly testing on the rowing ergometer for the rowing season of 2009. Members of the Rowing club Iktus were divided into two subgroups according to their sex. The obtained results were analysed in accordance with the age, the BMI, and the years of training independently for the each of the two subgroups. The results have showed that the average muscle power is independent of all the three parameters in the male rowers, while it is dependent on the age and the years of training in the female rowers. It seems that the BMI does not play any role at all in the average muscle power. As a conclusion, it could be stated that while one can suggest to female rowers to improve their performance with prolonged training, there is a need for a further research in order to formulate a suitable advice for male rowers. PMID:26987157

  7. Carrier escape from ground state and non-zero resonance frequency at low bias powers for semiconductor quantum-dot lasers

    NASA Astrophysics Data System (ADS)

    Wang, C.; Grillot, F.; Even, J.

    2012-06-01

    The three-dimensional confinement of electrons and holes in the semiconductor quantum dot (QD) structure profoundly changes its density of states compared to the bulk semiconductor or the thin-film quantum well (QW) structure. The aim of this paper is to theoretically investigate the microwave properties of InAs/InP(311B) QD lasers. A new expression of the modulation transfer function is derived for the analysis of QD laser modulation properties based on a set of four rate equations. Analytical calculations point out that carrier escape from ground state (GS) to excited state (ES) induces a non-zero resonance frequency at low bias powers. Calculations also show that the carrier escape leads to a larger damping factor offset as compared to conventional QW lasers. These results are of prime importance for a better understanding of the carrier dynamics in QD lasers as well as for further optimization of low cost sources for optical telecommunications.

  8. Diode-pumped continuous-wave and femtosecond Cr:LiCAF lasers with high average power in the near infrared, visible and near ultraviolet.

    PubMed

    Demirbas, Umit; Baali, Ilyes; Acar, Durmus Alp Emre; Leitenstorfer, Alfred

    2015-04-01

    We demonstrate continuous-wave (cw), cw frequency-doubled, cw mode-locked and Q-switched mode-locked operation of multimode diode-pumped Cr:LiCAF lasers with record average powers. Up to 2.54 W of cw output is obtained around 805 nm at an absorbed pump power of 5.5 W. Using intracavity frequency doubling with a BBO crystal, 0.9 W are generated around 402 nm, corresponding to an optical-to-optical conversion efficiency of 12%. With an intracavity birefringent tuning plate, the fundamental and frequency-doubled laser output is tuned continuously in a broad wavelength range from 745 nm to 885 nm and from 375 to 440 nm, respectively. A saturable Bragg reflector is used to initiate and sustain mode locking. In the cw mode-locked regime, the Cr:LiCAF laser produces 105-fs long pulses near 810 nm with an average power of 0.75 W. The repetition rate is 96.4 MHz, resulting in pulse energies of 7.7 nJ and peak powers of 65 kW. In Q-switched mode-locked operation, pulses with energies above 150 nJ are generated. PMID:25968727

  9. On the possibility of the determining the average mass composition near 10 to the 14th power eV through the solar magnetic field

    NASA Technical Reports Server (NTRS)

    Lloyd-Evans, J.

    1985-01-01

    The discovery of primary ultrahigh energy (UHE) gamma-rays has spawned plans for a new generation of air shower experiments with unprecedented directional resolution. Such accuracy permits observation of a cosmic ray shadow due to the solar disc. Particle trajectory simulations through models of the large scale solar magnetic field were performed. The shadow is apparent above 10 to the 15th power eV for all cosmic ray charges /Z/ 26; at lower energies, trajectories close to the Sun are bent sufficiently for this shadow to be lost. The onset of the shadow is rigidity dependent, and occurs at an energy per nucleus of approx. Z x 10 to the 13th power eV. The possibility of determining the average mass composition near 10 to the 14th power eV from 1 year's observation at a mountain altitude array is investigated.

  10. Terbium gallium garnet ceramic-based Faraday isolator with compensation of thermally induced depolarization for high-energy pulsed lasers with kilowatt average power

    SciTech Connect

    Yasuhara, Ryo; Snetkov, Ilya; Starobor, Alexey; Palashov, Oleg

    2014-12-15

    A scalable aperture Faraday isolator for high-energy pulsed lasers with kW-level average power was demonstrated using terbium gallium garnet ceramics with water cooling and compensation of thermally induced depolarization in a magnetic field. An isolation ratio of 35 dB (depolarization ratio γ of 3.4 × 10{sup −4}) was experimentally observed at a maximum laser power of 740 W. By using this result, we estimated that this isolator maintains an isolation ratio of 30 dB for laser powers of up to 2.7 kW. Our results provide the solution for achieving optical isolation in high-energy (100 J to kJ) laser systems with a repetition rate greater than 10 Hz.

  11. High-average-power (15-W) 255-nm source based on second-harmonic generation of a copper laser master oscillator power amplifier system in cesium lithium borate

    NASA Astrophysics Data System (ADS)

    Brown, Daniel J. W.; Withford, Michael J.

    2001-12-01

    We have generated 15 W of UV (255-nm) radiation with an optical conversion efficiency of 28% by frequency doubling the 510.6-nm output of a high-beam-quality, high-power copper laser system in cesium borate lithium (CLBO). We found that the superior performance of CLBO relative to β-barium borate is attributable largely to the small UV absorption and wide temperature acceptance bandwidth of CLBO, which reduces thermal dephasing during high-power UV generation.

  12. Continuously tunable Yb:KYW femtosecond oscillator based on a tunable highly dispersive semiconductor mirror.

    PubMed

    Wnuk, P; Wasylczyk, P; Zinkiewicz, Ł; Dems, M; Hejduk, K; Regiński, K; Wójcik-Jedlińska, A; Jasik, A

    2014-07-28

    The optimized nonuniform growth process was used to achieve spatially dependent reflectivity and dispersions characteristics in a highly dispersive semiconductor mirror. The mirror, together with a semiconductor saturable absorber mirror (SESAM), was used to demonstrate a tunable femtosecond Yb:KYW oscillator. In the passive modelocking regime the laser could be continuously tuned over 3.5 nm spectral band around 1032 nm with high resolution, maintaining the average output power above 140 mW. PMID:25089448

  13. Carbon nanotube mode-locked optically-pumped semiconductor disk laser.

    PubMed

    Seger, K; Meiser, N; Choi, S Y; Jung, B H; Yeom, D-I; Rotermund, F; Okhotnikov, O; Laurell, F; Pasiskevicius, V

    2013-07-29

    An optically pumped semiconductor disk laser was mode-locked for the first time by employing a single-walled carbon nanotube saturable absorber. Stable passive fundamental mode-locking was obtained at a repetition rate of 613 MHz with a pulse length of 1.23 ps. The mode-locked semiconductor disk laser in a compact geometry delivered a maximum average output power of 136 mW at 1074 nm. PMID:23938653

  14. The ETA-II linear induction accelerator and IMP wiggler: A high-average-power millimeter-wave free-electron-laser for plasma heating

    SciTech Connect

    Allen, S.L.; Scharlemann, E.T.

    1992-05-01

    We have constructed a 140-GHz free-electron laser to generate high-average-power microwaves for heating the MTX tokamak plasma. A 5.5-m steady-state wiggler (intense Microwave Prototype-IMP) has been installed at the end of the upgraded 60-cell ETA-II accelerator, and is configured as an FEL amplifier for the output of a 140-GHz long-pulse gyrotron. Improvements in the ETA-II accelerator include a multicable-feed power distribution network, better magnetic alignment using a stretched-wire alignment technique (SWAT). and a computerized tuning algorithm that directly minimizes the transverse sweep (corkscrew motion) of the electron beam. The upgrades were first tested on the 20-cell, 3-MeV front end of ETA-II and resulted in greatly improved energy flatness and reduced corkscrew motion. The upgrades were then incorporated into the full 60-cell configuration of ETA-II, along with modifications to allow operation in 50-pulse bursts at pulse repetition frequencies up to 5 kHz. The pulse power modifications were developed and tested on the High Average Power Test Stand (HAPTS), and have significantly reduced the voltage and timing jitter of the MAG 1D magnetic pulse compressors. The 2-3 kA. 6-7 MeV beam from ETA-II is transported to the IMP wiggler, which has been reconfigured as a laced wiggler, with both permanent magnets and electromagnets, for high magnetic field operation. Tapering of the wiggler magnetic field is completely computer controlled and can be optimized based on the output power. The microwaves from the FEL are transmitted to the MTX tokamak by a windowless quasi-optical microwave transmission system. Experiments at MTX are focused on studies of electron-cyclotron-resonance heating (ECRH) of the plasma. We summarize here the accelerator and pulse power modifications, and describe the status of ETA-II, IMP, and MTX operations.

  15. High-average-power (15-W) 255-nm source based on second-harmonic generation of a copper laser master oscillator power amplifier system in cesium lithium borate.

    PubMed

    Brown, D J; Withford, M J

    2001-12-01

    We have generated 15 W of UV (255-nm) radiation with an optical conversion efficiency of 28% by frequency doubling the 510.6-nm output of a high-beam-quality, high-power copper laser system in cesium borate lithium (CLBO). We found that the superior performance of CLBO relative to beta-barium borate is attributable largely to the small UV absorption and wide temperature acceptance bandwidth of CLBO, which reduces thermal dephasing during high-power UV generation. PMID:18059726

  16. Development of a kilowatt-class, joule-level ultrafast laser for driving compact high average power coherent EUV/soft x-ray sources

    NASA Astrophysics Data System (ADS)

    Reagan, Brendan A.; Baumgarten, Cory M.; Pedicone, Michael A.; Bravo, Herman; Yin, Liang; Woolston, Mark; Wang, Hanchen; Menoni, Carmen S.; Rocca, Jorge J.

    2016-03-01

    Our recent progress in the development of high energy / high average power, chirped pulse amplification laser systems based on diode-pumped, cryogenically-cooled Yb:YAG amplifiers is discussed, including the demonstration of a laser that produces 1 Joule, sub-10 picosecond duration, λ = 1.03μm pulses at 500 Hz repetition rate. This compact, all-diodepumped laser combines a mode-locked Yb:KYW oscillator and a water-cooled Yb:YAG preamplifer with two cryogenic power amplification stages to produce 1.5 Joule pulses with high beam quality which are subsequently compressed. This laser system occupies an optical table area of less than 1.5x3m2. This laser was employed to pump plasma-based soft x-ray lasers at λ = 10-20nm at repetition rates >=100 Hz. To accomplish this, temporally-shaped pulses were focused at grazing incidence into a high aspect ratio line focus using cylindrical optics on a high shot capacity rotating metal target. This results in an elongated plasma amplifier that produces microjoule pulses at several narrow-linewidth EUV wavelengths between λ = 109Å and 189Å. The resulting fraction of a milliwatt average powers are the highest reported to date for a compact, coherent source operating at these wavelengths, to the best of our knowledge.

  17. Reliable pulsed-operation of 1064-nm wavelength-stabilized diode lasers at high-average-power: boosting fiber lasers from the seed

    NASA Astrophysics Data System (ADS)

    Bettiati, M.; Beuchet, G.; Pagnod-Rossiaux, P.; Garabedian, P.; Perinet, J.; Fromy, S.; Bertreux, J.; Hirtz, J.; Laruelle, F.

    2010-02-01

    Most Pulsed Fiber Lasers (FLs) are built on a Master Oscillator - Power Amplifier (MOPA) architecture, as this configuration has the advantage, among others, of exploiting direct modulation of the diode laser seed (the MO) to reach high repetition rates and high peak-power pulsed operation. To enhance the FL global performance and reliability, high power single-lateral-mode 1064 nm diodes with outstanding long-term behavior are needed. The reliability of these devices at high power has been a challenge for years, due to the high built-in strain in the Quantum Well (QW). In this paper, we present excellent reliability results obtained, in both cw and pulsed conditions, on the latest generation of 1064 nm single-lateral-mode diodes developed at 3S PHOTONICS. Aging tests in cw conditions prove the intrinsic robustness of the diode even at very high junction temperatures, while specific tests in pulsed operation at 45 °C heat-sink temperature, and high repetition rates of several hundred kHz, confirm the stability of the devices in accelerated conditions directly derived from real applications. Both free-running and wavelength stabilized (by means of a Fiber Bragg Grating (FBG)) packaged devices show very stable performances under pulsed conditions. Reliable operation at higher average power than currently commercially available diode lasers seeds is demonstrated.

  18. Channeling of high-power radio waves under conditions of strong anomalous absorption in the presence of an averaged electron heating source

    SciTech Connect

    Vas'kov, V. V.; Ryabova, N. A.

    2010-02-15

    Strong anomalous absorption of a high-power radio wave by small-scale plasma inhomogeneities in the Earth's ionosphere can lead to the formation of self-consistent channels (solitons) in which the wave propagates along the magnetic field, but has a soliton-like intensity distribution across the field. The structure of a cylindrical soliton as a function of the wave intensity at the soliton axis is analyzed. Averaged density perturbations leading to wave focusing were calculated using the model proposed earlier by Vas'kov and Gurevich (Geomagn. Aeron. 16, 1112 (1976)), in which an averaged electron heating source was used. It is shown that, under conditions of strong electron recombination, the radii of individual solitons do not exceed 650 m.

  19. 900-mW average power and tunability from a diode-pumped 2.94-{mu}m Er:YAG oscillator

    SciTech Connect

    Hamilton, C.E.; Beach, R.J.; Sutton, S.B.; Furu, L.; Krupke, W.F.

    1994-01-01

    In this paper, the authors report on a diode-side-pumped Er:YAG laser that generates over 500 mW of average power at 2.94 {mu}m, and tunes over a 6 nm range centered about the 2.94-{mu}m transition. Prior to the development of the laser, diode-pumped Er:YAG lasers have been end-pumped monolithic devices that deliver {approximately}200 mW of output at 2.94 {mu}m. Much of the difficulty in obtaining higher average power from Er:YAG stems from the unfavorable lifetimes of the upper and lower laser levels, the complex state dynamics, and a low stimulated emission cross section ({sigma} {approx} 3 {times} 10{sup {minus}20} cm{sup 2}). One of the most important dynamical processes in Er:YAG is cross relaxation between neighboring Er{sup 3+} ions in the {sup 4}I{sub 13/2} level. By recycling much of the {sup 4}I{sub 13/2} population (lower laser level) into {sup 4}I{sub 11/2} (upper laser level), the cross relaxation overcomes the unfavorable lifetimes of the two levels, allowing the population inversion to be sustained. It is this cross relaxation along with thermalization of the two laser levels that allows cw oscillation on the 2.94 {mu}m line to take place. The laser that they describe here is a quasi-cw device as the approach to obtaining higher average power and limited tunability relies on side pumping with a quasi-cw InGaAs laser diode array. In this way, a higher gain-length product is generated, which is necessary for extending the tuning range of the laser, and for overcoming the higher losses associated with a discreet-element resonator.

  20. Measurement techniques for high-power semiconductor materials and devices. Annual report, October 1, 1980-December 31, 1981. [For calculating excess-carrier lifetime in silicon

    SciTech Connect

    Thurber, W R; Phillips, W E; Larrabee, R D

    1982-08-01

    This annual report describes results of NBS research directed toward the development of measurement methods for semiconductor materials and devices which will lead to more effective use of high-power semiconductor devices in applications for energy generation, transmission, conversion, and conservation. Emphasis is on the development of measurement methods for power-device-grade silicon. Major accomplishments during this reporting period were : (1) characterizing by deep level transient spectroscopy (DLTS) the energy levels in silicon power rectifier diodes, (2) writing of a computer program to predict lifetime-related parameters using as input the measured properties of the deep energy levels, (3) developing a novel method to detect nonexponential transients using a conventional double-boxcar DLTS system, (4) analyzing transient capacitance measurements to extend the techniques to nonexponential decays, (5) using a platinum resistance thermometer to calibrate temperature sensing diodes to obtain the precision needed for careful isothermal capacitance measurements, and (6) utilizing trap changing time as a technique to resolve overlapping DLTS peaks in sulfur-doped silicon.

  1. Evaluation of the peak torque, total work, average power of flexor-estensor and prono-supinator muscles of the elbow in baseball players.

    PubMed

    Costantino, Cosimo; Vaienti, Enrico; Pogliacomi, Francesco

    2003-08-01

    The Authors, after a short analysis on biomechanics of the elbow during throwing in baseball, show the movements of the elbow during the different phases of the throw and the stabilizing action of the ulnar collateral ligament, flexor-pronator muscles of the wrist, anconeus and brachial triceps muscles. Aim of this study is the evaluation of the peak torque, total work and average power of the flexor-extensor and pronator-supinator muscles of the elbows in professional baseball players. Isokinetic test data show that a mayor peak torque in flexo-extension at power and resistance test in the pitchers compared to the strikers. Whereas the strikers show a higher peak torque in pronation at the resistance test. This may happen because during a baseball match the ball is hit many times by the bat and the pronator muscle of the wrist are notably stimulated and reinforced. PMID:14509917

  2. The Mercury Laser System: An Average power, gas-cooled, Yb:S-FAP based system with frequency conversion and wavefront correction

    SciTech Connect

    Bibeau, C; Bayramian, A; Armstrong, P; Ault, E; Beach, R; Benapfl, M; Campbell, R; Dawson, J; Ebbers, C; Freitas, B; Kent, R; Liao, Z; Ladran, T; Menapace, J; Molander, B; Moses, E; Oberhelman, S; Payne, S; Peterson, N; Schaffers, K; Stolz, C; Sutton, S; Tassano, J; Telford, S; Utterback, E; Randles, M

    2005-08-31

    We report on the operation of the Mercury laser with fourteen 4 x 6 cm{sup 2} Yb:S-FAP amplifier slabs pumped by eight 100 kW peak power diode arrays. The system was continuously run at 55 J and 10 Hz for several hours, (2 x 10{sup 5} cumulative shots) with over 80% of the energy in a 6 times diffraction limited spot at 1.047 um. Improved optical quality was achieved in Yb:S-FAP amplifiers with magneto-rheological finishing, a deterministic polishing method. In addition, average power frequency conversion employing YCOB was demonstrated at 50% conversion efficiency or 22.6 J at 10 Hz.

  3. Tunable mid-IR parametric conversion system pumped by a high-average-power picosecond Yb:YAG thin-disk laser

    NASA Astrophysics Data System (ADS)

    Novák, Ondřej; Miura, Taisuke; Smrž, Martin; Huynh, Jaroslav; Severová, Patricie; Endo, Akira; Mocek, TomáÅ.¡

    2014-05-01

    The mid-IR wavelength range has gained increased interest due to its applications in gas sensing, medicine, defense, and others. Optical parametric devices play an important role in the generation of radiation in the mid-IR. Low thermal load of nonlinear crystals promises high average power outputs if powerful pump laser is available. We have developed 75-W average power pump laser operating at 100 kHz repetition rate. The pulses of Yb-fiber laser oscillator at 1030-nm wavelength are stretched by a chirped volume Bragg grating from 5 ps to 180 ps and inserted into a cavity of regenerative amplifier with an Yb:YAG thin-disk. The amplified pulses are compressed by a chirped volume Bragg grating with an 88% efficiency. We have proposed a wavelength conversion system generating picosecond pulses tunable between 2 and 3 μm. The seed signal radiation is acquired by the optical parametric generation in the first nonlinear crystal. Signal pulse energy is increased in the subsequent optical parametric amplifiers. Each amplification stage consists of a crystal pair in the walkoff compensating arrangement. The wavelength of the signal beam is tunable between 1.6 and 2.1 μm. The 2.1 - 3 μm tunable source will be the idler beam taken from the last amplification stage. Calculations show the output power of ten watt can be achieved for 100 W pump. The results of preliminary experiments with seeded optical parametric generation and subsequent amplification are presented and discussed.

  4. Continuous-wave seeded mid-IR parametric system pumped by the high-average-power picosecond Yb:YAG thin-disk laser

    NASA Astrophysics Data System (ADS)

    Novák, Ondřej; Smrž, Martin; Miura, Taisuke; Turčičová, Hana; Endo, Akira; Mocek, Tomáś

    2015-05-01

    Mid-IR wavelength range offers variety of interesting applications. Down-conversion in the optical parametric devices is promising to generate high average power mid-IR beam due to inherently low thermal load of the nonlinear crystals if a powerful and high quality pump beam is available. We developed 100 kHz pump laser of 100-W level average power. The stretched pulses of Yb-fiber laser oscillator at 1030 nm wavelength are injected into the regenerative amplifier with an Yb:YAG thin-disk. Diode pumping at zero phonon line at wavelength of 969 nm significantly reduces its thermal load and increases conversion efficiency and stability. We obtained the beam with power of 80 W and 2 ps compressed pulsewidth. We are developing a watt level mid-IR picosecond light source pumped by a beam of the thin disk regenerative amplifier. Part of the beam pumps PPLN, which is seeded by a continuous wave laser diode at 1.94 μm to decrease the generation threshold and determine the amplified spectrum. The 3 W pumping gave output of 30 mW, which is by up to two orders higher compared to unseeded operation. The gain of about 107 was achieved in the PPLN in the temporal window of the pump pulse. The spectrum and beam of the generated idler pulses in the mid-IR was measured. We obtained an amplified signal from the second stage with the KTP crystal. We expect watt level mid-IR output for initial 50-W pumping. The generation of longer wavelengths is discussed.

  5. Performance of MgO:PPLN, KTA, and KNbO₃ for mid-wave infrared broadband parametric amplification at high average power.

    PubMed

    Baudisch, M; Hemmer, M; Pires, H; Biegert, J

    2014-10-15

    The performance of potassium niobate (KNbO₃), MgO-doped periodically poled lithium niobate (MgO:PPLN), and potassium titanyl arsenate (KTA) were experimentally compared for broadband mid-wave infrared parametric amplification at a high repetition rate. The seed pulses, with an energy of 6.5 μJ, were amplified using 410 μJ pump energy at 1064 nm to a maximum pulse energy of 28.9 μJ at 3 μm wavelength and at a 160 kHz repetition rate in MgO:PPLN while supporting a transform limited duration of 73 fs. The high average powers of the interacting beams used in this study revealed average power-induced processes that limit the scaling of optical parametric amplification in MgO:PPLN; the pump peak intensity was limited to 3.8  GW/cm² due to nonpermanent beam reshaping, whereas in KNbO₃ an absorption-induced temperature gradient in the crystal led to permanent internal distortions in the crystal structure when operated above a pump peak intensity of 14.4  GW/cm². PMID:25361089

  6. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. PMID:26094059

  7. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  8. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  9. Semiconductor processing

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The primary thrust of the semiconductor processing is outlined. The purpose is to (1) advance the theoretical basis for bulk growth of elemental and compound semiconductors in single crystal form, and (2) to develop a new experimental approaches by which semiconductor matrices with significantly improved crystalline and chemical perfection can be obtained. The most advanced approaches to silicon crystal growth is studied. The projected research expansion, directed toward the capability of growth of 4 inch diameter silicon crystals was implemented. Both intra and interdepartmental programs are established in the areas of process metallurgy, heat transfer, mass transfer, and systems control. Solutal convection in melt growth systems is also studied.

  10. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    SciTech Connect

    Podoskin, A. A. Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S.

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  11. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  12. Semiconductor devices having a recessed electrode structure

    SciTech Connect

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  13. Yb-fiber-MOPA based high energy and average power uplink laser beacon for deep space communication operating under Nested PPM format

    NASA Astrophysics Data System (ADS)

    Engin, Doruk; Burton, John; Darab, Ibraheem; Kimpel, Frank; Gupta, Shantanu

    2015-05-01

    A Yb LMA fiber amplifier based 1030nm laser transmitter capable of operating with high average power and peak power (~500W, 9kW) is presented. The prototype, all-fiber, high TRL level laser transmitter is designed to meet all the single aperture requirements of a multi aperture deep space laser beacon system including operation with Nested pulse position modulation (PPM) format. Nested PPM format consist of an inner modulation PPM- (8,4) with 128nsec slot size and an outer modulation PPM-(2, 2) 65.5usec slot size. Here, nested PPM operation is presented for the first time. In implementing inner modulation strong pre-pulse shaping is required where PPM pattern dependent pulse energy variation (PEV) is minimized. Outer modulation is implemented by directly modulating VBG locked pump lasers for the final two gain. A sophisticated multi-stage, ultra-fast loss of signal (LOS) and backward Raman/lasing monitoring algorithm is implemented for ensuring reliable operation. Mechanical and electrical design of the delivered laser is scalable to multiple apertures.

  14. High temperature heat source generation with quasi-continuous wave semiconductor lasers at power levels of 6 W for medical use.

    PubMed

    Fujimoto, Takahiro; Imai, Yusuke; Tei, Kazuyoku; Ito, Shinobu; Kanazawa, Hideko; Yamaguchi, Shigeru

    2014-01-01

    We investigate a technology to create a high temperature heat source on the tip surface of the glass fiber proposed for medical surgery applications. Using 4 to 6 W power level semiconductor lasers at a wavelength of 980 nm, a laser coupled fiber tip was preprocessed to contain a certain amount of titanium oxide powder with a depth of 100 μm from the tip surface so that the irradiated low laser energy could be perfectly absorbed to be transferred to thermal energy. Thus, the laser treatment can be performed without suffering from any optical characteristic of the material. A semiconductor laser was operated quasi-continuous wave mode pulse time duration of 180 ms and >95% of the laser energy was converted to thermal energy in the fiber tip. Based on two-color thermometry, by using a gated optical multichannel analyzer with a 0.25 m spectrometer in visible wavelength region, the temperature of the fiber tip was analyzed. The temperature of the heat source was measured to be in excess 3100 K. PMID:24853040

  15. DBR-free optically pumped semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor

    2015-03-01

    Optically pumped semiconductor disk lasers (SDLs) provide high beam quality with high average-power power at designer wavelengths. However, material choices are limited by the need for a distributed Bragg reflector (DBR), usually monolithically integrated with the active region. We demonstrate DBR-free SDL active regions, which have been lifted off and bonded to various transparent substrates. For an InGaAs multi-quantum well sample bonded to a diamond window heat spreader, we achieved CW lasing with an output power of 2 W at 1150 nm with good beam quality.

  16. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

    PubMed

    Farhadi, Rozita; Farhadi, Bita

    2014-01-01

    Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines. PMID:25763152

  17. Compact high-power low-jitter semiconductor mode-locked laser module for photonic A/D converter applications

    NASA Astrophysics Data System (ADS)

    Braun, Alan M.; Price, Bradford B.; Bechtle, Daniel W.; Kwakernaak, Martin H.; Abeles, Joseph H.; Yilmaz, Tolga; Delfyett, Peter J., Jr.

    2003-07-01

    Low-capacitance, two-section, curved-waveguide gain elements were packaged with lensed polarization-maintaining fiber within standard-sized butterfly-style packages and shown to produce low-jitter pulses when used within a harmonically modelocked sigma cavity laser (jitter = 25 fs; 10 Hz - 10 MHz). Incorporation of a high finesse etalon filter into the sigma-cavity loop resulted in greater than 25 dB suppression of the supermode spurs while maintaining low integrated phase noise (jitter = 30 fs; 10 Hz - 10 MHz). A module containing the in-line sigma-cavity modelocked laser source and packaged semiconductor optical amplifiers was developed to create a configurable low jitter pulse source.

  18. High-resolution X-ray imaging—a powerful nondestructive technique for applications in semiconductor industry

    NASA Astrophysics Data System (ADS)

    Zschech, Ehrenfried; Yun, Wenbing; Schneider, Gerd

    2008-08-01

    The availability of high-brilliance X-ray sources, high-precision X-ray focusing optics and very efficient CCD area detectors has contributed essentially to the development of transmission X-ray microscopy (TXM) and X-ray computed tomography (XCT) with sub-50 nm resolution. Particularly, the fabrication of high aspect ratio Fresnel zone plates with zone widths approaching 15 nm has contributed to the enormous improvement in spatial resolution during the previous years. Currently, Fresnel zone plates give the ability to reach spatial resolutions of 15 to 20 nm in the soft and of about 30 to 50 nm in the hard X-ray energy range. X-ray microscopes with rotating anode X-ray sources that can be installed in an analytical lab next to a semiconductor fab have been developed recently. These unique TXM/XCT systems provide an important new capability of nondestructive 3D imaging of internal circuit structures without destructive sample preparation such as cross sectioning. These lab systems can be used for failure localization in micro- and nanoelectronic structures and devices, e.g., to visualize voids and residuals in on-chip metal interconnects without physical modification of the chip. Synchrotron radiation experiments have been used to study new processes and materials that have to be introduced into the semiconductor industry. The potential of TXM using synchrotron radiation in the soft X-ray energy range is shown for the nondestructive in situ imaging of void evolution in embedded on-chip copper interconnect structures during electromigration and for the imaging of different types of insulating thin films between the on-chip interconnects (spectromicroscopy).

  19. Estimation of the hydraulic conductivity of a two-dimensional fracture network using effective medium theory and power-law averaging

    NASA Astrophysics Data System (ADS)

    Zimmerman, R. W.; Leung, C. T.

    2009-12-01

    Most oil and gas reservoirs, as well as most potential sites for nuclear waste disposal, are naturally fractured. In these sites, the network of fractures will provide the main path for fluid to flow through the rock mass. In many cases, the fracture density is so high as to make it impractical to model it with a discrete fracture network (DFN) approach. For such rock masses, it would be useful to have recourse to analytical, or semi-analytical, methods to estimate the macroscopic hydraulic conductivity of the fracture network. We have investigated single-phase fluid flow through generated stochastically two-dimensional fracture networks. The centers and orientations of the fractures are uniformly distributed, whereas their lengths follow a lognormal distribution. The aperture of each fracture is correlated with its length, either through direct proportionality, or through a nonlinear relationship. The discrete fracture network flow and transport simulator NAPSAC, developed by Serco (Didcot, UK), is used to establish the “true” macroscopic hydraulic conductivity of the network. We then attempt to match this value by starting with the individual fracture conductances, and using various upscaling methods. Kirkpatrick’s effective medium approximation, which works well for pore networks on a core scale, generally underestimates the conductivity of the fracture networks. We attribute this to the fact that the conductances of individual fracture segments (between adjacent intersections with other fractures) are correlated with each other, whereas Kirkpatrick’s approximation assumes no correlation. The power-law averaging approach proposed by Desbarats for porous media is able to match the numerical value, using power-law exponents that generally lie between 0 (geometric mean) and 1 (harmonic mean). The appropriate exponent can be correlated with statistical parameters that characterize the fracture density.

  20. Plasma wakefields driven by an incoherent combination of laser pulses: a path towards high-average power laser-plasma accelerators

    SciTech Connect

    Benedetti, C.; Schroeder, C.B.; Esarey, E.; Leemans, W.P.

    2014-05-01

    he wakefield generated in a plasma by incoherently combining a large number of low energy laser pulses (i.e.,without constraining the pulse phases) is studied analytically and by means of fully-self-consistent particle-in-cell simulations. The structure of the wakefield has been characterized and its amplitude compared with the amplitude of the wake generated by a single (coherent) laser pulse. We show that, in spite of the incoherent nature of the wakefield within the volume occupied by the laser pulses, behind this region the structure of the wakefield can be regular with an amplitude comparable or equal to that obtained from a single pulse with the same energy. Wake generation requires that the incoherent structure in the laser energy density produced by the combined pulses exists on a time scale short compared to the plasma period. Incoherent combination of multiple laser pulses may enable a technologically simpler path to high-repetition rate, high-average power laser-plasma accelerators and associated applications.

  1. Optimization of X-ray sources from a high-average-power ND:Glass laser-produced plasma for proximity lithography

    SciTech Connect

    Celliers, P.; Da Silva, L.B.; Dane, C.B.

    1996-06-01

    The concept of a laser-based proximity lithography system for electronic microcircuit production has advanced to the point where a detailed design of a prototype system capable of exposing wafers at 40 wafer levels per hr is technically feasible with high-average-power laser technology. In proximity x-ray lithography, a photoresist composed of polymethyl- methacrylate (PMMA) or similar material is exposed to x rays transmitted through a mask placed near the photoresist, a procedure which is similar to making a photographic contact print. The mask contains a pattern of opaque metal features, with line widths as small as 0.12 {mu}m, placed on a thin (1-{mu}m thick) Si membrane. During the exposure, the shadow of the mask projected onto the resist produces in the physical and chemical properties of the resist a pattern of variation with the same size and shape as the features contained in the metal mask. This pattern can be further processed to produce microscopic structures in the Si substrate. The main application envisioned for this technology is the production of electronic microcircuits with spatial features significantly smaller than currently achievable with conventional optical lithographic techniques (0.12 {micro}m vs 0.25 {micro}m). This article describes work on optimizing a laser-produced plasma x-ray source intended for microcircuit production by proximity lithography.

  2. Plasma wakefields driven by an incoherent combination of laser pulses: A path towards high-average power laser-plasma accelerators

    SciTech Connect

    Benedetti, C.; Schroeder, C. B.; Esarey, E.; Leemans, W. P.

    2014-05-15

    The wakefield generated in a plasma by incoherently combining a large number of low energy laser pulses (i.e., without constraining the pulse phases) is studied analytically and by means of fully self-consistent particle-in-cell simulations. The structure of the wakefield has been characterized and its amplitude compared with the amplitude of the wake generated by a single (coherent) laser pulse. We show that, in spite of the incoherent nature of the wakefield within the volume occupied by the laser pulses, behind this region, the structure of the wakefield can be regular with an amplitude comparable or equal to that obtained from a single pulse with the same energy. Wake generation requires that the incoherent structures in the laser energy density produced by the combined pulses exist on a time scale short compared to the plasma period. Incoherent combination of multiple laser pulses may enable a technologically simpler path to high-repetition rate, high-average power laser-plasma accelerators, and associated applications.

  3. Combined peak-to-average power ratio reduction and physical layer security enhancement in optical orthogonal frequency division multiplexing visible-light communication systems

    NASA Astrophysics Data System (ADS)

    Wang, Zhongpeng; Chen, Shoufa

    2016-07-01

    A physical encryption scheme for discrete Hartley transform (DHT) precoded orthogonal frequency division multiplexing (OFDM) visible-light communication (VLC) systems using frequency domain chaos scrambling is proposed. In the scheme, the chaos scrambling, which is generated by a modified logistic mapping, is utilized to enhance the physical layer of security, and the DHT precoding is employed to reduce of OFDM signal for OFDM-based VLC. The influence of chaos scrambling on peak-to-average power ratio (PAPR) and bit error rate (BER) of systems is studied. The experimental simulation results prove the efficiency of the proposed encryption method for DHT-precoded, OFDM-based VLC systems. Furthermore, the influence of the proposed encryption to the PAPR and BER of systems is evaluated. The experimental results show that the proposed security scheme can protect the DHT-precoded, OFDM-based VLC from eavesdroppers, while keeping the good BER performance of DHT-precoded systems. The BER performance of the encrypted and DHT-precoded system is almost the same as that of the conventional DHT-precoded system without encryption.

  4. Generation of sub-100 ps pulses with a peak power of 65 W by gain switching, pulse shortening, and pulse amplification using a semiconductor-based master oscillator-power amplifier system.

    PubMed

    Schwertfeger, Sven; Klehr, Andreas; Hoffmann, Thomas; Liero, Armin; Wenzel, Hans; Erbert, Götz

    2013-05-10

    We present a method of the generation of sub-100 ps pulses with an all-semiconductor master oscillator-power amplifier (MOPA) system, consisting of a three section distributed Bragg reflector (DBR) laser as MO and a two section tapered PA. The pulses generated by the gain-switched DBR laser are first shortened by the ridge-waveguide input section of the PA acting as a saturable absorber and then amplified by the tapered gain region section. We generate laser pulses with a minimum duration of 35 ps and a peak power of more than 65 W. The spectral width is less than 0.25 nm around a center wavelength of 1063 nm. PMID:23669852

  5. High-Efficiency, Low-Voltage, Compound Semiconductor Devices for Microwave and MM-Wave Power Amplifiers

    SciTech Connect

    Chao, P.C.; Hietala, V.M.; Kong, W.; Sloan, Lynn R.

    1999-07-14

    Improvements in the last decade in InP materials growth, device processing techniques, characterization, and circuit design have enabled solid-state power performance through 122 GHz. Although originally targeted for low-noise and power performance at mm-wave frequencies (>30 GHz), InP HEMTs could become the preferred device for frequencies as low as 800 MHz. This investment has benefited the microwave frequency regime with higher efficiency and power densities at lower operating voltages. State-of-the-art microwave performance at lower operating voltage provides a path to smaller, lighter-weight systems in the battery operated arena of commercial and defense electronics. This paper describes an InP HEMT technology being investigated for many power and low-noise amplifier applications from UHF to W-band frequencies. Specifically the technology demonstrated 640mW/mm power density, 27 dB gain, and 84% power-added efficiency at L-band with a bias of 3.0 volts. Based on the author's literature search, this is a record efficiency at L-band with an operating voltage of less than 5 volts.

  6. 140-fs duration and 60-W peak power blue-violet optical pulses generated by a dispersion-compensated GaInN mode-locked semiconductor laser diode using a nonlinear pulse compressor.

    PubMed

    Kono, Shunsuke; Watanabe, Hideki; Koda, Rintaro; Fuutagawa, Noriyuki; Narui, Hironobu

    2015-12-14

    Blue-violet optical pulses of 140-fs duration and 60-W peak power were obtained from a dispersion-compensated GaInN mode-locked semiconductor laser diode using a nonlinear pulse compression technique. Wavelength-dependent group velocity dispersion expressed by third-order phase dispersion was applied to the optical pulses using a pulse compressor with a spatial light modulator. The obtained optical pulses had the shortest duration ever obtained for a mode-locked semiconductor laser diode using edge-emitting type devices. PMID:26698968

  7. Experiment Safety Assurance Package for Mixed Oxide Fuel Irradiation in an Average Power Position (I-24) in the Advanced Test Reactor

    SciTech Connect

    J. M . Ryskamp; R. C. Howard; R. C. Pedersen; S. T. Khericha

    1998-10-01

    The Fissile Material Disposition Program Light Water Reactor Mixed Oxide Fuel Irradiation Test Project Plan details a series of test irradiations designed to investigate the use of weapons-grade plutonium in MOX fuel for light water reactors (LWR) (Cowell 1996a, Cowell 1997a, Thoms 1997a). Commercial MOX fuel has been successfully used in overseas reactors for many years; however, weapons-derived test fuel contains small amounts of gallium (about 2 parts per million). A concern exists that the gallium may migrate out of the fuel and into the clad, inducing embrittlement. For preliminary out-of-pile experiments, Wilson (1997) states that intermetallic compound formation is the principal interaction mechanism between zircaloy cladding and gallium. This interaction is very limited by the low mass of gallium, so problems are not expected with the zircaloy cladding, but an in-pile experiment is needed to confirm the out-of-pile experiments. Ryskamp (1998) provides an overview of this experiment and its documentation. The purpose of this Experiment Safety Assurance Package (ESAP) is to demonstrate the safe irradiation and handling of the mixed uranium and plutonium oxide (MOX) Fuel Average Power Test (APT) experiment as required by Advanced Test Reactor (ATR) Technical Safety Requirement (TSR) 3.9.1 (LMITCO 1998). This ESAP addresses the specific operation of the MOX Fuel APT experiment with respect to the operating envelope for irradiation established by the Upgraded Final Safety Analysis Report (UFSAR) Lockheed Martin Idaho Technologies Company (LMITCO 1997a). Experiment handling activities are discussed herein.

  8. Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications

    NASA Astrophysics Data System (ADS)

    Yamauchi, Yoshimitsu; Kamakura, Yoshinari; Isagi, Yousuke; Matsuoka, Toshimasa; Malotaux, Satoshi

    2013-09-01

    A novel floating-gate oxide semiconductor (FLOTOS) memory using a wide-band-gap indium-gallium-zinc oxide (IGZO) is presented for low-power system-on-panel applications. An IGZO thin-film-transistor (TFT) is used as a memory transistor for controlling read current as well as a switching transistor for storing charges in a storage capacitor (Cs). The FLOTOS memory is fabricated using a standard IGZO TFT process without any additional process or mask steps. The proposed precharge-assisted threshold voltage compensation technique makes it possible to realize an infinite number of write cycles and a low-power write operation with a bit-line voltage of 5 V. Furthermore, excellent data retention longer than 10 h is obtained at 60 °C even under the worst bias-stress condition of read operation with the ultra low off-state leakage (2.8×10-20 A/µm) of the IGZO TFTs, which is estimated to be smaller by more than 7 orders of magnitude than that of polycrystalline silicon TFTs.

  9. Radiofrequency current source (RFCS) drive and decoupling technique for parallel transmit arrays using a high-power metal oxide semiconductor field-effect transistor (MOSFET).

    PubMed

    Lee, Wonje; Boskamp, Eddy; Grist, Thomas; Kurpad, Krishna

    2009-07-01

    A radiofrequency current source (RFCS) design using a high-power metal oxide semiconductor field effect transistor (MOSFET) that enables independent current control for parallel transmit applications is presented. The design of an RFCS integrated with a series tuned transmitting loop and its associated control circuitry is described. The current source is operated in a gated class AB push-pull configuration for linear operation at high efficiency. The pulsed RF current amplitude driven into the low impedance transmitting loop was found to be relatively insensitive to the various loaded loop impedances ranging from 0.4 to 10.3 ohms, confirming current mode operation. The suppression of current induced by a neighboring loop was quantified as a function of center-to-center loop distance, and was measured to be 17 dB for nonoverlapping, adjacent loops. Deterministic manipulation of the B(1) field pattern was demonstrated by the independent control of RF phase and amplitude in a head-sized two-channel volume transmit array. It was found that a high-voltage rated RF power MOSFET with a minimum load resistance, exhibits current source behavior, which aids in transmit array design. PMID:19353658

  10. Extended-Cavity Semiconductor Wavelength-Swept Laser for Biomedical Imaging

    PubMed Central

    Yun, S. H.; Boudoux, C.; Pierce, M. C.; de Boer, J. F.; Tearney, G. J.; Bouma, B. E.

    2010-01-01

    We demonstrate a compact high-power rapidly swept wavelength tunable laser source based on a semiconductor optical amplifier and an extended-cavity grating filter. The laser produces excellent output characteristics for biomedical imaging, exhibiting >4-mW average output power, <0.06-nm instantaneous linewidth, and >80-dB noise extinction with its center wavelength swept over 100 nm at 1310 nm at variable repetition rates up to 500 Hz. PMID:20640193

  11. Key techniques for space-based solar pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  12. SEMICONDUCTOR INTEGRATED CIRCUITS: A low power cyclic ADC design for a wireless monitoring system for orthopedic implants

    NASA Astrophysics Data System (ADS)

    Yi, Chen; Fule, Li; Hong, Chen; Chun, Zhang; Zhihua, Wang

    2009-08-01

    This paper presents a low power cyclic analog-to-digital convertor (ADC) design for a wireless monitoring system for orthopedic implants. A two-stage cyclic structure including a single to differential converter, two multiplying DAC functional blocks (MDACs) and some comparators is adopted, which brings moderate speed and moderate resolution with low power consumption. The MDAC is implemented with the common switched capacitor method. The 1.5-bit stage greatly simplifies the design of the comparator. The operational amplifier is carefully optimized both in schematic and layout for low power and offset. The prototype chip has been fabricated in a United Microelectronics Corporation (UMC) 0.18-μm 1P6M CMOS process. The core of the ADC occupies only 0.12 mm2. With a 304.7-Hz input and 4-kHz sampling rate, the measured peak SNDR and SFDR are 47.1 dB and 57.8 dBc respectively and its DNL and INL are 0.27 LSB and 0.3 LSB, respectively. The power consumption of the ADC is only 12.5 μW in normal working mode and less than 150 nW in sleep mode.

  13. Semiconductor structure and devices

    NASA Technical Reports Server (NTRS)

    Dinkel, Nancy A. (Inventor); Goldstein, Bernard (Inventor); Ettenberg, Michael (Inventor)

    1987-01-01

    Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

  14. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

    SciTech Connect

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-15

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.

  15. Electron power loss in the (100) n channel of a Si metal-oxide-semiconductor field-effect transistor. II. Intersubband phonon scattering

    NASA Astrophysics Data System (ADS)

    Krowne, Clifford M.

    1983-05-01

    A simple matrix element is used to approximate electron-acoustic phonon scattering between different electron subbands i in the n channel of a (100) surface silicon MOSFET (metal-oxide-semiconductor field-effect transistor) device. This matrix element is used to determine the form of the electron power loss Pij in a i→j intersubband transition. P10 is calculated for TL =4.2 °K lattice temperature and electron temperatures Te between 4.4 °K and 18 °K when the electron inversion density Ninv =(3.76-10.0)×1011 cm-2 and an acceptor density NA =1014/cm3, and compared to Fang and Fowler's experimental data (which is put into the form of an experimental power loss Pexp). This is justified since the total power loss P due to intrasubband scattering as well as other Pij terms besides P10 is small. It is found that good to excellent fits between P10 and Pexp occur by adjusting the separation Δɛ10 between the lowest two circular subband edges. Δɛ10 is between 5.2 and 9.4 meV, and the electron-phonon deformation coupling constant D≊3.5 eV. The values of Δɛ10 obtained in such a manner roughly agree with Stern's theoretical self-consistent results. P10 is very sensitive to both Δɛ10 and to the effective mass for motion parallel to the surface m1 with the results implying that m1≊0.19m0 (m0=free electron rest mass). If one wants to find the contribution of intersubband scattering to P at higher TL, the formalism should still be applicable, although the approach could be much more complicated due to the addition of new Pij terms coming from both higher subbands and new scattering agents such as optical modes.

  16. High power, high beam quality laser source with narrow, stable spectra based on truncated-tapered semiconductor amplifier

    NASA Astrophysics Data System (ADS)

    Wang, X.; Erbert, G.; Wenzel, H.; Crump, P.; Eppich, B.; Knigge, S.; Ressel, P.; Ginolas, A.; Maaßdorf, A.; Tränkle, G.

    2013-02-01

    High power diode lasers are increasingly important in many industrial applications. However, an ongoing challenge is to simultaneously obtain high output power, diffraction-limited beam quality and narrow spectral width. One approach to fulfill these requirements is to use a "master oscillator - power amplifier (MOPA)" system. We present recent data on MOPAs using PA designs that have low confinement factor (1%), leading to low modal gain, and low optical loss (<0.5cm-1). Quantum barriers with low refractive index are used to reduce the optical waveguiding due to the active region, which should decrease susceptibility to filament formation. A truncated tapered lateral design was used. Conventional tapered designs have a ridge waveguide (RW) at the entrance of the devices with etched cavity- spoiling grooves at the transition to the tapered gain region. Our amplifier used a truncated tapered design with no RW entrance section. We show that for this approach cavity-spoiling grooves are not necessary, and achieve improved performance when they are omitted, which we attribute to the filament insensitivity of our structure. High beam quality was achieved from a 970nm amplifier with M2 (1/e2) = 1.9, with efficiency of <48% in QCW condition, and <17W diffraction-limited beam maintained in the central lobe. The impact of the in-plane geometrical design was assessed and we show that large surface area is advantageous for device performance. The spectral properties of the amplifier replicated that of the DBRtapered laser, which is used as the master oscillator, with a spectral width of <30pm (FWHM). Design options for further increases in power are presented.

  17. High-Performance electronics at ultra-low power consumption for space applications: From superconductor to nanoscale semiconductor technology

    NASA Technical Reports Server (NTRS)

    Duncan, Robert V.; Simmons, Jerry; Kupferman, Stuart; McWhorter, Paul; Dunlap, David; Kovanis, V.

    1995-01-01

    A detailed review of Sandia's work in ultralow power dissipation electronics for space flight applications, including superconductive electronics, new advances in quantum well structures, and ultra-high purity 3-5 materials, and recent advances in micro-electro-optical-mechanical systems (MEMS) is presented. The superconductive electronics and micromechanical devices are well suited for application in micro-robotics, micro-rocket engines, and advanced sensors.

  18. High average power, high energy 1.55 μm ultra-short pulse laser beam delivery using large mode area hollow core photonic band-gap fiber.

    PubMed

    Peng, Xiang; Mielke, Michael; Booth, Timothy

    2011-01-17

    We demonstrate high average power, high energy 1.55 μm ultra-short pulse (<1 ps) laser delivery using helium-filled and argon-filled large mode area hollow core photonic band-gap fibers and compare relevant performance parameters. The ultra-short pulse laser beam-with pulse energy higher than 7 μJ and pulse train average power larger than 0.7 W-is output from a 2 m long hollow core fiber with diffraction limited beam quality. We introduce a pulse tuning mechanism of argon-filled hollow core photonic band-gap fiber. We assess the damage threshold of the hollow core photonic band-gap fiber and propose methods to further increase pulse energy and average power handling. PMID:21263632

  19. Tunable UV generation at 286 nm by frequency tripling of a high-power mode-locked semiconductor laser

    SciTech Connect

    Goldberg, L.; Kliner, D.A.V.

    1995-08-01

    We produced ultraviolet radiation by frequency tripling the mode-locked emission of an external cavity laser containing a tapered GaAlAs amplifier gain element. The 429-nm second harmonic produced by a KNbO{sub 3} crystal was sum-frequency mixed with the 858-nm fundamental in a Li{sub 3}BO{sub 5} crystal, generating as much as 50{mu}W of power at 286 nm. {copyright} {ital 1995} {ital Optical} {ital Society} {ital of} {ital America}.

  20. Semiconductor alloys - Structural property engineering

    NASA Technical Reports Server (NTRS)

    Sher, A.; Van Schilfgaarde, M.; Berding, M.; Chen, A.-B.

    1987-01-01

    Semiconductor alloys have been used for years to tune band gaps and average bond lengths to specific applications. Other selection criteria for alloy composition, and a growth technique designed to modify their structural properties, are presently considered. The alloys Zn(1-y)Cd(y)Te and CdSe(y)Te(1-y) are treated as examples.

  1. Design and Analysis of Power Low-Temperature Polysilicon Lateral Double-Diffusion Metal Oxide Semiconductor Field Effect Transistors with Shielding-Trench Structure

    NASA Astrophysics Data System (ADS)

    Lin, Jyh-Ling; Lin, Cang-Ting

    2013-08-01

    A new polycrystalline silicon (poly-Si) lateral double-diffusion metal oxide semiconductor field-effect transistor power device combining super-lateral-growth technology and shielding-trench oxide structures (STO-LDMOSFET) is introduced. The trench oxide offers a platform for amorphous silicon lateral growth through excimer laser annealing; this not only enables stable control of the crystallization of poly-Si but also promotes the blocking ability of devices. The breakdown voltages of the manufactured devices with and without trench oxide are 460 and 387 V, respectively, increasing by approximately 73 V. The characteristics of poly-Si treated with an excimer laser were obtained by low-temperature poly-Si LDMOSFET (LTPS-LDMOSFET) measurement and simulation. Then, STO-LDMOSFETs were studied by simulation. The results showed that the STO-LDMOSFET with a 150 cm2 V-1 s-1 mobility had a breakdown voltage and a specific on-resistance of approximately 450 V and 16 Ω cm2, respectively, at a 40 µm drift region length.

  2. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

    NASA Technical Reports Server (NTRS)

    Larsson, Anders G.; Maserjian, Joseph

    1992-01-01

    Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

  3. A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

    SciTech Connect

    Ettisserry, D. P. Goldsman, N.; Lelis, A.

    2014-03-14

    In this paper, we present a methodology for the identification and quantification of defects responsible for low channel mobility in 4H-Silicon Carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs). To achieve this, we use an algorithm based on 2D-device simulations of a power MOSFET, density functional simulations, and measurement data. Using physical modeling of carrier mobility and interface traps, we reproduce the experimental I-V characteristics of a 4H-SiC doubly implanted MOSFET through drift-diffusion simulation. We extract the position of Fermi level and the occupied trap density as a function of applied bias and temperature. Using these inputs, our algorithm estimates the number of possible trap types, their energy levels, and concentrations at 4H-SiC/SiO{sub 2} interface. Subsequently, we use density functional theory (DFT)-based ab initio simulations to identify the atomic make-up of defects causing these trap levels. We study silicon vacancy and carbon di-interstitial defects in the SiC side of the interface. Our algorithm indicates that the D{sub it} spectrum near the conduction band edge (3.25 eV) is composed of three trap types located at 2.8–2.85 eV, 3.05 eV, and 3.1–3.2 eV, and also calculates their densities. Based on DFT simulations, this work attributes the trap levels very close to the conduction band edge to the C di-interstitial defect.

  4. A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ettisserry, D. P.; Goldsman, N.; Lelis, A.

    2014-03-01

    In this paper, we present a methodology for the identification and quantification of defects responsible for low channel mobility in 4H-Silicon Carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs). To achieve this, we use an algorithm based on 2D-device simulations of a power MOSFET, density functional simulations, and measurement data. Using physical modeling of carrier mobility and interface traps, we reproduce the experimental I-V characteristics of a 4H-SiC doubly implanted MOSFET through drift-diffusion simulation. We extract the position of Fermi level and the occupied trap density as a function of applied bias and temperature. Using these inputs, our algorithm estimates the number of possible trap types, their energy levels, and concentrations at 4H-SiC/SiO2 interface. Subsequently, we use density functional theory (DFT)-based ab initio simulations to identify the atomic make-up of defects causing these trap levels. We study silicon vacancy and carbon di-interstitial defects in the SiC side of the interface. Our algorithm indicates that the Dit spectrum near the conduction band edge (3.25 eV) is composed of three trap types located at 2.8-2.85 eV, 3.05 eV, and 3.1-3.2 eV, and also calculates their densities. Based on DFT simulations, this work attributes the trap levels very close to the conduction band edge to the C di-interstitial defect.

  5. Americans' Average Radiation Exposure

    SciTech Connect

    NA

    2000-08-11

    We live with radiation every day. We receive radiation exposures from cosmic rays, from outer space, from radon gas, and from other naturally radioactive elements in the earth. This is called natural background radiation. It includes the radiation we get from plants, animals, and from our own bodies. We also are exposed to man-made sources of radiation, including medical and dental treatments, television sets and emission from coal-fired power plants. Generally, radiation exposures from man-made sources are only a fraction of those received from natural sources. One exception is high exposures used by doctors to treat cancer patients. Each year in the United States, the average dose to people from natural and man-made radiation sources is about 360 millirem. A millirem is an extremely tiny amount of energy absorbed by tissues in the body.

  6. Present Status and Future of EUV (Extreme Ultra Violet) Light Source Research 4.Laser Produced Plasma Light Sources 4.2High Average Power Laser Produced Plasma EUV Light Sources

    NASA Astrophysics Data System (ADS)

    Endo, Akira

    This paper reviews the research and development of the high average power, extreme ultraviolet light source based on laser produced plasma by EUVA. The technology is based on a liquid Xe micro jet, high repetition rate short pulse Nd:YAG laser, and various diagnostics for plasma optimization are described.

  7. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS ELECTRICAL INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have...

  8. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section...

  9. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2014-10-01 2014-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  10. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  11. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 120.360 Section...

  12. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  13. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2012-10-01 2012-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  14. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2012-10-01 2012-10-01 false Semiconductor rectifier systems. 120.360 Section...

  15. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2014-10-01 2014-10-01 false Semiconductor rectifier systems. 120.360 Section...

  16. Wide-Bandgap Semiconductors

    SciTech Connect

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  17. Ultrafast thin-disk multipass laser amplifier delivering 1.4 kW (4.7 mJ, 1030 nm) average power converted to 820 W at 515 nm and 234 W at 343 nm.

    PubMed

    Negel, Jan-Philipp; Loescher, André; Voss, Andreas; Bauer, Dominik; Sutter, Dirk; Killi, Alexander; Ahmed, Marwan Abdou; Graf, Thomas

    2015-08-10

    We report on an Yb:YAG thin-disk multipass laser amplifier delivering sub-8 ps pulses at a wavelength of 1030 nm with 1420 W of average output power and 4.7 mJ of pulse energy. The amplifier is seeded by a regenerative amplifier delivering 6.5 ps pulses with 300 kHz of repetition rate and an average power of 115 W. The optical efficiency of the multipass amplifier was measured to be 48% and the beam quality factor was better than M2 = 1.4. Furthermore we report on the external second harmonic generation from 1030 nm to 515 nm using an LBO crystal leading to an output power of 820 W with 2.7 mJ of energy per pulse. This corresponds to a conversion efficiency of 70%. Additionally, 234 W of average power were obtained at the third harmonic with a wavelength of 343 nm. PMID:26367957

  18. Generation of 33 fs 93.5 W average power pulses from a third-order dispersion managed self-similar fiber amplifier.

    PubMed

    Liu, Yang; Li, Wenxue; Luo, Daping; Bai, Dongbi; Wang, Chao; Zeng, Heping

    2016-05-16

    We report on a high-power third-order dispersion managed amplification system that delivers 33-fs pulses of 93.5 W at a repetition rate of 55 MHz. A pair of grisms are used as the pre-chirper for optimizing the third order dispersion (TOD) to group velocity dispersion (GVD) ratio. Detail experiments show that the use of a grsim pre-chirper significantly enhances the quality of the compressed pulses. We demonstrate that the third order dispersion of both the amplifier and the compressor can be compensated for by the grisms. Furthermore, the nonlinear phase shift introduced by spectral asymmetry during amplification can be restrained. This type of scheme, applied in our experiment, can be used for further development of a high power laser with ultrashort pulse and wide spectrum. PMID:27409915

  19. 115 kHz tuning repetition rate ultrahigh-speed wavelength-swept semiconductor laser

    PubMed Central

    Oh, W. Y.; Yun, S. H.; Tearney, G. J.; Bouma, B. E.

    2009-01-01

    We demonstrate an ultrahigh-speed wavelength-swept semiconductor laser using a polygon-based wavelength scanning filter. With a polygon rotational speed of 900 revolutions per second, a continuous wavelength tuning rate of 9200 nm/ms and a tuning repetition rate of 115 kHz were achieved. The wavelength tuning range of the laser was 80 nm centered at 1325 nm, and the average polarized output power was 23 mW. PMID:16350273

  20. Intra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm.

    PubMed

    Bek, Roman; Baumgärtner, Stefan; Sauter, Fabian; Kahle, Hermann; Schwarzbäck, Thomas; Jetter, Michael; Michler, Peter

    2015-07-27

    We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm. PMID:26367654

  1. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    SciTech Connect

    Chamorovskiy, A Yu; Okhotnikov, Oleg G

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  2. Longitudinal temperature distribution in an end-pumped solid-state amplifier medium: application to a high average power diode pumped Yb:YAG thin disk amplifier.

    PubMed

    Bourdet, Gilbert L; Yu, Haiwu

    2007-08-10

    We propose a simple analytical derivation making it possible to compute a one-dimensional temperature variation in an end-pumped solid-state laser. This derivation takes into account the pump intensity variation along the crystal, the doping concentration, and temperature dependence of the thermal conductivity. We then compare this simulation with the one usually used, which does not take into account any of these dependences. The results show that, at room temperature, the two methods are in good agreement, but at a cryogenic temperature where the thermal conductivity varies fast with temperature, a large discrepancy is found, and the conventional computations underestimate both the average temperature and the longitudinal gradient. PMID:17694159

  3. 50-GHz repetition-rate, 280-fs pulse generation at 100-mW average power from a mode-locked laser diode externally compressed in a pedestal-free pulse compressor.

    PubMed

    Tamura, Kohichi R; Sato, Kenji

    2002-07-15

    280-fs pedestal-free pulses are generated at average output powers exceeding 100 mW at a repetition rate of 50 GHz by compression of the output of a mode-locked laser diode (MLLD) by use of a pedestal-free pulse compressor (PFPC). The MLLD consists of a monolithically integrated chirped distributed Bragg reflector, a gain section, and an electroabsorption modulator. The PFPC is composed of a dispersion-flattened dispersion-decreasing fiber and a dispersion-flattened dispersion-imbalanced nonlinear optical loop mirror. Frequency modulation for linewidth broadening is used to overcome the power limitation imposed by stimulated Brillouin scattering. PMID:18026424

  4. Overview of the Lucia laser program: toward 100-Joules, nanosecond-pulse, kW averaged power based on ytterbium diode-pumped solid state laser

    NASA Astrophysics Data System (ADS)

    Chanteloup, J.-C.; Yu, H.; Bourdet, G.; Dambrine, C.; Ferre, S.; Fulop, A.; Le Moal, S.; Pichot, A.; Le Touze, G.; Zhao, Z.

    2005-04-01

    We present the current status of the Lucia laser being built at the LULI laboratory, the national civil facility for intense laser matter interaction in France. This diode pumped laser will deliver a 100 Joules, 10 ns, 10 Hz pulse train from Yb:YAG using 4400 power diode laser bars. We first focus on the amplifier stage by describing the reasons for selecting our extraction architecture. Thermal issues and solutions for both laser and pumping heads are then described. Finally, we emphasize more specifically the need for long-lifetime high-laser-damage-threshold coatings and optics.

  5. EFFECT OF LASER LIGHT ON MATTER. LASER PLASMAS: Hardening of aluminium by YAG : Nd laser radiation with an average power of 0.8 kW

    NASA Astrophysics Data System (ADS)

    Kovsh, Ivan B.; Strekalova, M. S.

    1994-02-01

    An investigation is reported of the effects of a surface heat treatment of aluminium by a YAG : Nd laser beam with a power up to 0.8 kW. In particular, a study was made of the influence of the treatment conditions on the microhardness, as well as on the residual stresses and their sign in hardened surface layers of aluminium. The efficiency of aluminium hardening by radiation from a cw YAG : Nd laser was found to be considerably higher than in the case of a cw CO2 laser.

  6. Neutron resonance averaging

    SciTech Connect

    Chrien, R.E.

    1986-10-01

    The principles of resonance averaging as applied to neutron capture reactions are described. Several illustrations of resonance averaging to problems of nuclear structure and the distribution of radiative strength in nuclei are provided. 30 refs., 12 figs.

  7. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    PubMed Central

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

  8. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    NASA Astrophysics Data System (ADS)

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-05-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail.

  9. Watt-level passively Q-switched heavily Er(3+)-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror.

    PubMed

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er(3+)-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

  10. Nonlinear optical interactions in semiconductors

    NASA Astrophysics Data System (ADS)

    Salour, M. M.

    1985-12-01

    The optical pumping technique in GaAs has led to the development of a novel and highly sensitive optical temperature sensor. Completed is the experiment on two photon optical pumping in ZnO. An external cavity semiconductor laser involving ZnO as a gain medium was demonstrated under two-photon excitation. This laser should have a major impact on the development of tunable blue-green radiation for submarine communication. Completed is a paper on heat buildup in semiconductor platelets. New lasers are used to explore elementary excitation in optical thin film layers of semiconductors. This has led to the first demonstration of the feasibility of room temperature operation of a tunable coherent source involving multiple quantum well material. Completed is the construction of a simple remote (non-contact) temperature sensor to directly measure heat buildup in semiconductor materials as a result of high power optical laser excitation. Finally, an experiment involving optical frequency mixing to probe electrodynamics in the GaAlAs multiple quantumwell and superlattice structures, utilizing two recently constructed tunabel laser systems,has been successful. Attempts were focused on observing a number of new optical effects including nonlinear absorption and transmission phenomena, enhanced spontaneous and stimulated light scattering processes, etc. The construction of an external cavity semiconductor HgCdTe has been successful.

  11. Exciton Transport in Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Menke, Stephen Matthew

    Photovoltaic cells based on organic semiconductors are attractive for their use as a renewable energy source owing to their abundant feedstock and compatibility with low-cost coating techniques on flexible substrates. In contrast to photovoltaic cells based traditional inorganic semiconductors, photon absorption in an organic semiconductor results in the formation of a coulombically bound electron-hole pair, or exciton. The transport of excitons, consequently, is of critical importance as excitons mediate the interaction between charge and light in organic photovoltaic cells (OPVs). In this dissertation, a strong connection between the fundamental photophysical parameters that control nanoscopic exciton energy transfer and the mesoscopic exciton transport is established. With this connection in place, strategies for enhancing the typically short length scale for exciton diffusion (L D) can be developed. Dilution of the organic semiconductor boron subphthalocyanine chloride (SubPc) is found to increase the LD for SubPc by 50%. In turn, OPVs based on dilute layers of SubPc exhibit a 30% enhancement in power conversion efficiency. The enhancement in power conversion efficiency is realized via enhancements in LD, optimized optical spacing, and directed exciton transport at an exciton permeable interface. The role of spin, energetic disorder, and thermal activation on L D are also addressed. Organic semiconductors that exhibit thermally activated delayed fluorescence and efficient intersystem and reverse intersystem crossing highlight the balance between singlet and triplet exciton energy transfer and diffusion. Temperature dependent measurements for LD provide insight into the inhomogeneously broadened exciton density of states and the thermal nature of exciton energy transfer. Additional topics include energy-cascade OPV architectures and broadband, spectrally tunable photodetectors based on organic semiconductors.

  12. Narrow linewidth, single mode 3 kW average power from a directly diode pumped ytterbium-doped low NA fiber amplifier.

    PubMed

    Beier, F; Hupel, C; Nold, J; Kuhn, S; Hein, S; Ihring, J; Sattler, B; Haarlammert, N; Schreiber, T; Eberhardt, R; Tünnermann, A

    2016-03-21

    We report on a newly designed and fabricated ytterbium-doped large mode area fiber with an extremely low NA (~0.04) and related systematic investigations on fiber parameters that crucially influence the mode instability threshold. The fiber is used to demonstrate a narrow linewidth, continuous wave, single mode fiber laser amplifier emitting a maximum output power of 3 kW at a wavelength of 1070 nm without reaching the mode-instability threshold. A high slope efficiency of 90 %, excellent beam quality, high temporal stability, and an ASE suppression of 70 dB could be reached with a signal linewidth of only 170 pm. PMID:27136795

  13. 500 kHz OPCPA delivering tunable sub-20 fs pulses with 15 W average power based on an all-ytterbium laser.

    PubMed

    Puppin, Michele; Deng, Yunpei; Prochnow, Oliver; Ahrens, Jan; Binhammer, Thomas; Morgner, Uwe; Krenz, Marcel; Wolf, Martin; Ernstorfer, Ralph

    2015-01-26

    An optical parametric chirped pulse amplifier fully based on Yb lasers at 500 kHz is described. Passive optical-synchronization is achieved between a fiber laser-pumped white-light and a 515 nm pump produced with a 200 W picosecond Yb:YAG InnoSlab amplifier. An output power up to 19.7 W with long-term stability of 0.3% is demonstrated for wavelength tunable pulses between 680 nm and 900 nm and spectral stability of 0.2%; 16.5 W can be achieved with a bandwidth supporting 5.4 fs pulses. We demonstrate compression of 30 µJ pulses to sub-20 fs duration with a prism compressor, suitable for high harmonic generation. PMID:25835905

  14. Energy harvesting in semiconductor-insulator-semiconductor junctions through excitation of surface plasmon polaritons

    NASA Astrophysics Data System (ADS)

    Pradhan, A. K.; Holloway, Terence; Mundle, Rajeh; Dondapati, Hareesh; Bahoura, M.

    2012-02-01

    We have demonstrated a simple approach for developing a photovoltaic device consisting of semiconductor-insulator-semiconductor (SIS) heterojunction using surface plasmon polaritons (SPPs) generated in one of the semiconductors (Al:ZnO) and propagated through the dielectric barrier (SiO2) to other (Si). This robust architecture based on surface plasmon excitation within an SIS device that produces power based on spatial confinement of electron excitation through plasmon absorption in Al:ZnO in a broad spectrum of visible to infrared wavelengths enhancing the photovoltaic activities. This finding suggests a range of applications for photovoltaics, sensing, waveguides, and others using SPPs enhancement on semiconductors without using noble metals.

  15. Semiconductor Laser Low Frequency Noise Characterization

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Logan, Ronald T.

    1996-01-01

    This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

  16. FY2005 Progress Summary and FY2006 Program Plan Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers, and Complementary Technologies, for Applications in Energy and Defense

    SciTech Connect

    Ebbers, C

    2006-03-24

    The primary focus this year was to operate the system with two amplifiers populated with and pumped by eight high power diode arrays. The system was operated for extended run periods which enabled average power testing of components, diagnostics, and controls. These tests were highly successful, with a demonstrated energy level of over 55 joules for 4 cumulative hours at a repetition rate of 10 Hz (average power 0.55 kW). In addition, high average power second harmonic generation was demonstrated, achieving 227 W of 523.5 nm light (22.7 J, 10 Hz, 15 ns, 30 minutes) Plans to achieve higher energy levels and average powers are in progress. The dual amplifier system utilizes a 4-pass optical arrangement. The Yb:S-FAP slabs were mounted in aerodynamic aluminum vane structures to allow turbulent helium gas flow across the faces. Diagnostic packages that monitored beam performance were deployed during operation. The laser experiments involved injecting a seed beam from the front end into the system and making four passes through both amplifiers. Beam performance diagnostics monitored the beam on each pass to assess system parameters such as gain and nearfield intensity profiles. This year, an active mirror and wavefront sensor were procured and demonstrated in an off-line facility. The active mirror technology can correct for low order phase distortions at user specified operating conditions (such as repetition rates different than 10 Hz) and is a complementary technology to the static phase plates used in the system for higher order distortions. A picture of the laser system with amplifier No.2 (foreground) and amplifier No.1 (background) is shown in Fig. 1.0.1.1. The control system and diagnostics were recently enhanced for faster processing and allow remote operation of the system. The growth and fabrication of the Yb:S-FAP slabs constituted another major element of our program objectives. Our goal was to produce at least fourteen 4x6 cm2 crystalline slabs. These

  17. Photoelectrosynthesis at semiconductor electrodes

    SciTech Connect

    Nozik, A. J.

    1980-12-01

    The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

  18. Photorefractive Semiconductors and Applications

    NASA Technical Reports Server (NTRS)

    Chen, Li-Jen; Luke, Keung L.

    1993-01-01

    Photorefractive semiconductors are attractive for information processing, becuase of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ration. This paper presents recent experimental results on information processing using photorefractive GaAs, InP and CdTe, including image processing with semiconductor lasers.

  19. Design of a tunable parametric wavelength conversion system between 2 and 3 μm pumped by a high-average-power Yb:YAG thin-disk laser

    NASA Astrophysics Data System (ADS)

    Novák, Ondřej; Miura, Taisuke; Severová, Patricie; Endo, Akira; Mocek, Tomáš

    2013-05-01

    With increasing energy densities of laser pulses the laser induced damage threshold (LIDT) testing becomes an important characterization of optical components. The emission wavelength of several laser materials is in the 2 - 3 μm wavelength-range. We propose a wavelength conversion system generating tunable sub-ns pulses for LIDT measurements in this IR spectral range. The pump beam of the conversion system will be based on the thin-disk laser technology. The Yb-fiber-laser seeded CPA system with high-energy Yb:YAG thin-disk regenerative amplifier will produce uncompressed pulses of 0.5 ns width, 130 mJ energy, at wavelength of 1030 nm with 1 kHz repetition rate giving 130 W of average power. Output of the thin-disk regenerative amplifier will pump an optical parametric generator (OPG) and subsequent optical parametric amplifiers (OPA). The tunable output wavelength of the OPG will be between 1.5 μm - 2.1 μm for the signal beam and between 2.1 μm - 3 μm for the idler beam. The signal will be amplified in the OPAs because the optics and diagnostics is more easily available below 2 μm wavelength. The tunable multi-millijoule source above 2.1 μm will be the idler beam taken from the last amplification stage. High-average output power of 10 W at 1 kHz repetition rate will be unique among 2 - 3 μm tunable systems. Operation of the amplifiers at high-intensities and high-average powers limits the system performance. The thermal load of crystals caused by the partial beam absorption will be studied. Further, the damage threshold of optical components, transmission range of nonlinear crystals, and amplifiers bandwidths will be addressed.

  20. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  1. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  2. Anomalous Charge Transport in Disordered Organic Semiconductors

    SciTech Connect

    Muniandy, S. V.; Woon, K. L.; Choo, K. Y.

    2011-03-30

    Anomalous charge carrier transport in disordered organic semiconductors is studied using fractional differential equations. The connection between index of fractional derivative and dispersion exponent is examined from the perspective of fractional Fokker-Planck equation and its link to the continuous time random walk formalism. The fractional model is used to describe the bi-scaling power-laws observed in the time-of flight photo-current transient data for two different types of organic semiconductors.

  3. Approximate Analysis of Semiconductor Laser Arrays

    NASA Technical Reports Server (NTRS)

    Marshall, William K.; Katz, Joseph

    1987-01-01

    Simplified equation yields useful information on gains and output patterns. Theoretical method based on approximate waveguide equation enables prediction of lateral modes of gain-guided planar array of parallel semiconductor lasers. Equation for entire array solved directly using piecewise approximation of index of refraction by simple functions without customary approximation based on coupled waveguid modes of individual lasers. Improved results yield better understanding of laser-array modes and help in development of well-behaved high-power semiconductor laser arrays.

  4. Optical conductivity for liquid semiconductors

    NASA Astrophysics Data System (ADS)

    Jain, Manish; Ko, Eunjung; Derby, J. J.; Chelikowsky, James

    2002-03-01

    We present calculations for the optical conductivity of several semiconductor liquids: SiGe, GaAs, CdTe, and ZnTe. We perform ab initio molecular dynamics for these liquids. The required interatomic forces are determined using the pseudopotential density functional method. We determine the optical conductivity by considering ensemble averages of the liquid state within the Kubo-Greenwood formalism. In the liquid phase, CdTe and ZnTe exhibit properties that are different from III-V and group IV semiconductors. CdTe and ZnTe remain semiconducting unlike SiGe and GaAs, which are metallic in the melt. These differences in optical conductivities are explained in terms of differences in the microstructure of the liquids. We also verify an empirical rule by Joffe and Regel. Their rule predicts the liquid will remain semiconducting if the short range order of the melt resembles that of the crystalline phase.

  5. Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia

    NASA Astrophysics Data System (ADS)

    Qiu, Ke-Qum; Cao, Shu-Chen; Wang, Hu-Zhong; Wang, Ke-Ning; Xiao, Ton-Ha; Shen, Ke-Wei

    1993-03-01

    GaAs semiconductor laser was used to treat trigeminal neuralgia with an effective rate of 91.1%, and no side effects were found in 67 cases. Changes in and the recovery of the trigeminal nerve cell were studied with light and electromicroscope. Discussed in this article are the time length and quantity of laser treatment with low power. Experimental study and clinical application of the GaAs semiconductor laser have been carried out in our department since 1987. One-hundred-fifteen patients with various diseases in the maxillofacial region (including 67 cases of trigeminal neuralgia) have been treated with satisfactory effects and without any side-effects. The wavelength of the laser is 904 mu, the largest pulse length is 200 mu, and the average power is 2000 HZ.

  6. Spatial filters for high average power lasers

    SciTech Connect

    Erlandson, Alvin C

    2012-11-27

    A spatial filter includes a first filter element and a second filter element overlapping with the first filter element. The first filter element includes a first pair of cylindrical lenses separated by a first distance. Each of the first pair of cylindrical lenses has a first focal length. The first filter element also includes a first slit filter positioned between the first pair of cylindrical lenses. The second filter element includes a second pair of cylindrical lenses separated by a second distance. Each of the second pair of cylindrical lenses has a second focal length. The second filter element also includes a second slit filter positioned between the second pair of cylindrical lenses.

  7. On the Berdichevsky average

    NASA Astrophysics Data System (ADS)

    Rung-Arunwan, Tawat; Siripunvaraporn, Weerachai; Utada, Hisashi

    2016-04-01

    Through a large number of magnetotelluric (MT) observations conducted in a study area, one can obtain regional one-dimensional (1-D) features of the subsurface electrical conductivity structure simply by taking the geometric average of determinant invariants of observed impedances. This method was proposed by Berdichevsky and coworkers, which is based on the expectation that distortion effects due to near-surface electrical heterogeneities will be statistically smoothed out. A good estimation of a regional mean 1-D model is useful, especially in recent years, to be used as a priori (or a starting) model in 3-D inversion. However, the original theory was derived before the establishment of the present knowledge on galvanic distortion. This paper, therefore, reexamines the meaning of the Berdichevsky average by using the conventional formulation of galvanic distortion. A simple derivation shows that the determinant invariant of distorted impedance and its Berdichevsky average is always downward biased by the distortion parameters of shear and splitting. This means that the regional mean 1-D model obtained from the Berdichevsky average tends to be more conductive. As an alternative rotational invariant, the sum of the squared elements (ssq) invariant is found to be less affected by bias from distortion parameters; thus, we conclude that its geometric average would be more suitable for estimating the regional structure. We find that the combination of determinant and ssq invariants provides parameters useful in dealing with a set of distorted MT impedances.

  8. Averaging the inhomogeneous universe

    NASA Astrophysics Data System (ADS)

    Paranjape, Aseem

    2012-03-01

    A basic assumption of modern cosmology is that the universe is homogeneous and isotropic on the largest observable scales. This greatly simplifies Einstein's general relativistic field equations applied at these large scales, and allows a straightforward comparison between theoretical models and observed data. However, Einstein's equations should ideally be imposed at length scales comparable to, say, the solar system, since this is where these equations have been tested. We know that at these scales the universe is highly inhomogeneous. It is therefore essential to perform an explicit averaging of the field equations in order to apply them at large scales. It has long been known that due to the nonlinear nature of Einstein's equations, any explicit averaging scheme will necessarily lead to corrections in the equations applied at large scales. Estimating the magnitude and behavior of these corrections is a challenging task, due to difficulties associated with defining averages in the context of general relativity (GR). It has recently become possible to estimate these effects in a rigorous manner, and we will review some of the averaging schemes that have been proposed in the literature. A tantalizing possibility explored by several authors is that the corrections due to averaging may in fact account for the apparent acceleration of the expansion of the universe. We will explore this idea, reviewing some of the work done in the literature to date. We will argue however, that this rather attractive idea is in fact not viable as a solution of the dark energy problem, when confronted with observational constraints.

  9. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1979-01-01

    The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

  10. The Physics of Semiconductors

    NASA Astrophysics Data System (ADS)

    Grundmann, Marius

    The historic development of semiconductor physics and technology began in the second half of the 19th century. Interesting discussions of the early history of the physics and chemistry of semiconductors can be found in treatises of G. Busch [2] and Handel [3]. The history of semiconductor industry can be followedin the text of Morris [4] and Holbrook et al. [5]. In 1947, the realization of the transistor was the impetus to a fast-paced development that created the electronics and photonics industries. Products founded on the basis of semiconductor devices such as computers (CPUs, memories), optical-storage media (lasers for CD, DVD), communication infrastructure (lasers and photodetectors for optical-fiber technology, high frequency electronics for mobile communication), displays (thin film transistors, LEDs), projection (laser diodes) and general lighting (LEDs) are commonplace. Thus, fundamental research on semiconductors and semiconductor physics and its offspring in the form of devices has contributed largely to the development of modern civilization and culture.

  11. FY2002 Progress Summary Program Plan, Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers, and Complementary Technologies, for Applications in Energy and Defense

    SciTech Connect

    Bayramian, A; Bibeau, C; Beach, R; Behrendt, B; Ebbers, C; Latkowski, J; Meier, W; Payne, S; Perkins, J; Schaffers, K; Skulina, K; Ditmire, T; Kelly, J; Waxer, L; Rudi, P; Randles, M; Witter, D; Meissner, H; Merissner, O

    2001-12-13

    The High Average Power Laser Program (HAPL) is a multi-institutional, coordinated effort to develop a high-energy, repetitively pulsed laser system for Inertial Fusion Energy and other DOE and DOD applications. This program is building a laser-fusion energy base to complement the laser-fusion science developed by DOE Defense programs over the past 25 years. The primary institutions responsible for overseeing and coordinating the research activities are the Naval Research Laboratory (NRL) and LLNL. The current LLNL proposal is a companion proposal to that submitted by NRL, for which the driver development element is focused on the krypton fluoride excimer laser option. Aside from the driver development aspect, the NRL and LLNL companion proposals pursue complementary activities with the associated rep-rated laser technologies relating to target fabrication, target injection, final optics, fusion chamber, materials and power plant economics. This report requests continued funding in FY02 to support LLNL in its program to build a 1kW, 100J, diode-pumped, crystalline laser. In addition, research in high gain laser target design, fusion chamber issues and survivability of the final optic element will be pursued. These technologies are crucial to the feasibility of inertial fusion energy power plants and also have relevance in rep-rated stewardship experiments.

  12. Semiconductor microcavity lasers

    SciTech Connect

    Gourley, P.L.; Wendt, J.R.; Vawter, G.A.; Warren, M.E.; Brennan, T.M.; Hammons, B.E.

    1994-02-01

    New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

  13. Coherent magnetic semiconductor nanodot arrays

    PubMed Central

    2011-01-01

    In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation. PMID:21711627

  14. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  15. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  16. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  17. Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng; Hughes, Steven; Citrin, David

    1998-01-01

    We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

  18. Covariant approximation averaging

    NASA Astrophysics Data System (ADS)

    Shintani, Eigo; Arthur, Rudy; Blum, Thomas; Izubuchi, Taku; Jung, Chulwoo; Lehner, Christoph

    2015-06-01

    We present a new class of statistical error reduction techniques for Monte Carlo simulations. Using covariant symmetries, we show that correlation functions can be constructed from inexpensive approximations without introducing any systematic bias in the final result. We introduce a new class of covariant approximation averaging techniques, known as all-mode averaging (AMA), in which the approximation takes account of contributions of all eigenmodes through the inverse of the Dirac operator computed from the conjugate gradient method with a relaxed stopping condition. In this paper we compare the performance and computational cost of our new method with traditional methods using correlation functions and masses of the pion, nucleon, and vector meson in Nf=2 +1 lattice QCD using domain-wall fermions. This comparison indicates that AMA significantly reduces statistical errors in Monte Carlo calculations over conventional methods for the same cost.

  19. Average density in cosmology

    SciTech Connect

    Bonnor, W.B.

    1987-05-01

    The Einstein-Straus (1945) vacuole is here used to represent a bound cluster of galaxies embedded in a standard pressure-free cosmological model, and the average density of the cluster is compared with the density of the surrounding cosmic fluid. The two are nearly but not quite equal, and the more condensed the cluster, the greater the difference. A theoretical consequence of the discrepancy between the two densities is discussed. 25 references.

  20. Statistical analysis of accelerated temperature aging of semiconductor devices

    NASA Astrophysics Data System (ADS)

    Johnson, W. A.; Milles, M. F.

    1981-05-01

    A number of semiconductor devices taken from a distribution were operated at several elevated temperatures to induce failure in all devices within a reasonable time. Assuming general characteristics of the device failure probability density function (pdf) and its temperature dependence, the expected cumulative failure function (cff) for devices in normal operation were estimated based on statistical inference, taking the average probability of a random device (from the same distribution but operated at a normal temperature) failing as a function of time. A review of the mathematical formalism employed in semiconductor reliability discussions is included. Three failure pdf's at particular usefulness to this analysis--exponential, normal, and lognormal - are discussed. The cff, at times orders of magnitude loss then, at times comparable to the desired system useful, life (*10 to the 4th power to 10 to the 5th power hr) is considered. A review of accelerated temperature aging is presented, and the assumption concerning the general characteristics of the failure pdf, which are fundamental to this analysis, are emphasized.

  1. Spin injection into semiconductors

    NASA Astrophysics Data System (ADS)

    Oestreich, M.; Hübner, J.; Hägele, D.; Klar, P. J.; Heimbrodt, W.; Rühle, W. W.; Ashenford, D. E.; Lunn, B.

    1999-03-01

    The injection of spin-polarized electrons is presently one of the major challenges in semiconductor spin electronics. We propose and demonstrate a most efficient spin injection using diluted magnetic semiconductors as spin aligners. Time-resolved photoluminescence with a Cd0.98Mn0.02Te/CdTe structure proves the feasibility of the spin-alignment mechanism.

  2. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier...) Meet Sections 35.84.2 and 35.84.4 of the ABS Steel Vessel Rules (incorporated by reference; see 46 CFR... 46 Shipping 7 2013-10-01 2013-10-01 false Semiconductor rectifier systems. 183.360 Section...

  3. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier...) Meet Sections 35.84.2 and 35.84.4 of the ABS Steel Vessel Rules (incorporated by reference; see 46 CFR... 46 Shipping 7 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 183.360 Section...

  4. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier...) Meet Sections 35.84.2 and 35.84.4 of the ABS Steel Vessel Rules (incorporated by reference; see 46 CFR... 46 Shipping 7 2012-10-01 2012-10-01 false Semiconductor rectifier systems. 183.360 Section...

  5. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER 100 GROSS TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each...

  6. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier...) Meet Sections 35.84.2 and 35.84.4 of the ABS Steel Vessel Rules (incorporated by reference; see 46 CFR... 46 Shipping 7 2014-10-01 2014-10-01 false Semiconductor rectifier systems. 183.360 Section...

  7. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    SciTech Connect

    Rantamaeki, Antti; Lyytikaeinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G

    2011-09-30

    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  8. April 25, 2003, FY2003 Progress Summary and FY2002 Program Plan, Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers,and Complementary Technologies, for Applications in Energy and Defense

    SciTech Connect

    Meier, W; Bibeau, C

    2005-10-25

    The High Average Power Laser Program (HAPL) is a multi-institutional, synergistic effort to develop inertial fusion energy (IFE). This program is building a physics and technology base to complement the laser-fusion science being pursued by DOE Defense programs in support of Stockpile Stewardship. The primary institutions responsible for overseeing and coordinating the research activities are the Naval Research Laboratory (NRL) and Lawrence Livermore National Laboratory (LLNL). The current LLNL proposal is a companion document to the one submitted by NRL, for which the driver development element is focused on the krypton fluoride excimer laser option. The NRL and LLNL proposals also jointly pursue complementary activities with the associated rep-rated laser technologies relating to target fabrication, target injection, final optics, fusion chamber, target physics, materials and power plant economics. This proposal requests continued funding in FY03 to support LLNL in its program to build a 1 kW, 100 J, diode-pumped, crystalline laser, as well as research into high gain fusion target design, fusion chamber issues, and survivability of the final optic element. These technologies are crucial to the feasibility of inertial fusion energy power plants and also have relevance in rep-rated stewardship experiments. The HAPL Program pursues technologies needed for laser-driven IFE. System level considerations indicate that a rep-rated laser technology will be needed, operating at 5-10 Hz. Since a total energy of {approx}2 MJ will ultimately be required to achieve suitable target gain with direct drive targets, the architecture must be scaleable. The Mercury Laser is intended to offer such an architecture. Mercury is a solid state laser that incorporates diodes, crystals and gas cooling technologies.

  9. Production of 35S for a Liquid Semiconductor Betavoltaic

    SciTech Connect

    Meier, David E.; Garnov, A. Y.; Robertson, J. D.; Kwon, J. W.; Wacharasindhu, T.

    2009-10-01

    The specific energy density from radioactive decay is five to six orders of magnitude greater than the specific energy density in conventional chemical battery and fuel cell technologies. We are currently investigating the use of liquid semiconductor based betavoltaics as a way to directly convert the energy of radioactive decay into electrical power and potentially avoid the radiation damage that occurs in solid state semiconductor devices due to non-ionizing energy loss. Sulfur-35 was selected as the isotope for the liquid semiconductor demonstrations because it can be produced in high specific activity and it is chemically compatible with known liquid semiconductor media.

  10. Semiconductor materials: From gemstone to semiconductor

    NASA Astrophysics Data System (ADS)

    Nebel, Christoph E.

    2003-07-01

    For diamond to be a viable semiconductor it must be possible to change its conductivity by adding impurities - known as dopants. With the discovery of a new dopant that generates electron conductivity at room temperature, diamond emerges as an electronic-grade material.

  11. High-Performance Thermoelectric Semiconductors

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre; Caillat, Thierry; Borshchevsky, Alexander

    1994-01-01

    Figures of merit almost double current state-of-art thermoelectric materials. IrSb3 is semiconductor found to exhibit exceptional thermoelectric properties. CoSb3 and RhSb3 have same skutterudite crystallographic structure as IrSb3, and exhibit exceptional transport properties expected to contribute to high thermoelectric performance. These three compounds form solid solutions. Combination of properties offers potential for development of new high-performance thermoelectric materials for more efficient thermoelectric power generators, coolers, and detectors.

  12. Microradiography with Semiconductor Pixel Detectors

    NASA Astrophysics Data System (ADS)

    Jakubek, Jan; Cejnarova, Andrea; Dammer, Jiří; Holý, Tomáš; Platkevič, Michal; Pospíšil, Stanislav; Vavřík, Daniel; Vykydal, Zdeněk

    2007-11-01

    High resolution radiography (with X-rays, neutrons, heavy charged particles, …) often exploited also in tomographic mode to provide 3D images stands as a powerful imaging technique for instant and nondestructive visualization of fine internal structure of objects. Novel types of semiconductor single particle counting pixel detectors offer many advantages for radiation imaging: high detection efficiency, energy discrimination or direct energy measurement, noiseless digital integration (counting), high frame rate and virtually unlimited dynamic range. This article shows the application and potential of pixel detectors (such as Medipix2 or TimePix) in different fields of radiation imaging.

  13. Electron power loss in the (100) n channel of a Si metal-oxide-semiconductor field-effect transistor. I. Intrasubband phonon scattering

    NASA Astrophysics Data System (ADS)

    Krowne, Clifford M.

    1983-05-01

    The electron energy relaxation is studied as a function of the ``electron temperature'' Te in the n channel of a (100) surface silicon MOSFET (metal-oxide-semiconductor field-effect transistor) device by inspecting the phenomenological energy relaxation time τɛ(Te) at 4.2 °K, 77 °K, and 300 °K lattice temperatures. τɛ is theoretically calculated in order to determine the relative contributions of shear horizontal (SH), pressure-shear vertical (P-SV), shear vertical-pressure (SV-P), total reflection shear vertical pressure (TR), and Rayleigh (R) surface acoustic phonon modes to the electron energy relaxation at the interface. Two-dimensional electron transport is assumed and the effects of subbanding near the interface are included. Only electron scatter events within subbands are studied (intrasubband). This exhaustive study finds that surface modes do not dominate the electron energy relaxation at the Si-SiO2 interface at TL =4.2 °K. Some other mechanism(s) must predominate at TL =4.2 °K.

  14. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  15. The effect of an aerobic training program on the electrical remodeling of heart high-frequency components of the signal-averaged electrocardiogram is a predictor of the maximal aerobic power.

    PubMed

    Marocolo, M; Nadal, J; Benchimol Barbosa, P R

    2007-02-01

    Increased heart rate variability (HRV) and high-frequency content of the terminal region of the ventricular activation of signal-averaged ECG (SAECG) have been reported in athletes. The present study investigates HRV and SAECG parameters as predictors of maximal aerobic power (VO2max) in athletes. HRV, SAECG and VO2max were determined in 18 high-performance long-distance (25 +/- 6 years; 17 males) runners 24 h after a training session. Clinical visits, ECG and VO2max determination were scheduled for all athletes during the training period. A group of 18 untrained healthy volunteers matched for age, gender, and body surface area was included as controls. SAECG was acquired in the resting supine position for 15 min and processed to extract average RR interval (Mean-RR) and root mean squared standard deviation (RMSSD) of the difference of two consecutive normal RR intervals. SAECG variables analyzed in the vector magnitude with 40-250 Hz band-pass bi-directional filtering were: total and 40-microV terminal (LAS40) duration of ventricular activation, RMS voltage of total (RMST) and of the 40-ms terminal region of ventricular activation. Linear and multivariate stepwise logistic regressions oriented by inter-group comparisons were adjusted in significant variables in order to predict VO2max, with a P < 0.05 considered to be significant. VO2max correlated significantly (P < 0.05) with RMST (r = 0.77), Mean-RR (r = 0.62), RMSSD (r = 0.47), and LAS40 (r = -0.39). RMST was the independent predictor of VO2max. In athletes, HRV and high-frequency components of the SAECG correlate with VO2max and the high-frequency content of SAECG is an independent predictor of VO2max. PMID:17273656

  16. Fabrication Processes for Surface-Emitting via External 45-DEGREE Reflectors, High-Power via Arrayed Ridge - Single-Mode Phase-Locked Aluminum Gallium Arsenide/gallium Arsenide Semiconductor Laser Sources.

    NASA Astrophysics Data System (ADS)

    Porkolab, Gyorgy Arpad

    The fabrication of monolithically integrated configurations of semiconductor lasers incorporating multiple functions is still an open issue today in engineering. A useful set of functions to integrate are: surface-emitting, high -power, phase-locked, single-mode, and collimated laser beam output. In this work new materials and advanced fabrication processes are developed for integrating the first four of the five functions listed. The interest in semiconductor lasers is due to their greater than 90% internal quantum efficiency in converting current-flux to photon-flux, their small size and weight, and their wavelength range from 400 to 1,550 nm. Multitudes of applications are possible for semiconductor laser sources ranging from the low-volume market of satellite-based communications systems to the high-volume market of image display screens. Semimetallic amorphous carbon (SMAC) thin film is introduced as an etch mask for chemically assisted ion beam etching (CAIBE) resulting in smooth etched facets in AlGaAs/GaAs at normal- and 45-degrees- incidence angles. A self-aligned etch technique is introduced using 4 separate photoresist selector-masks on top of a fixed SMAC master -mask on top of the AlGaAs/GaAs substrate to perform 4 separate CAIBE etches at 3 different angles and to 3 different depths to create self-aligned 3-dimensional microstructures of 1.3-μm deep ridge waveguides (RWG), 6-μm deep laser facets, and 11- μm long back-to-back 45-degree reflectors arranged in 3 by 100 arrays. Trenches on topside and underside of laser facets are introduced to deflect current away from laser facets. Silicon-rich nitro-oxide thin film is introduced as triple-use encapsulation to provide chemical passivation of AlGaAs/GaAs, optical anti-reflection coating by being refractive-index matched to AlGaAs/GaAs, and electrical insulation. A pincer-action sample-holder for CAIBE is introduced allowing samples to heat up by ion beam heating. Various surface preparations

  17. A new very high voltage semiconductor switch

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1985-01-01

    A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

  18. Commissioning of the ATLAS Semiconductor Tracker with cosmic rays

    NASA Astrophysics Data System (ADS)

    Stanecka, E.; Atlas Sct Collaboration

    2007-10-01

    This paper presents the results of the tests with cosmic rays of the ATLAS Semiconductor Tracker (SCT) as well as operational experience of running the fully integrated silicon detector during the commissioning of the completed SCT. Prior to inserting into ATLAS, the barrel part of the SCT has been integrated with the Transition Radiation Tracker (TRT) barrel and tested with cosmic rays. A sector of 468 SCT modules has been powered and read simultaneously with TRT modules in physics mode. In total 500 thousand events were recorded during cosmic runs and processed with the ATLAS off-line reconstruction software. The SCT performance was measured in terms of the average noise occupancy per channel (4.5×10-5) and the overall efficiency (>99%). The tests with cosmic rays proved full functionality of the complex Detector Control System (DCS) which provides control, monitoring and safety functions for the detector electronics.

  19. Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser

    SciTech Connect

    Sokolova, Z. N. Pikhtin, N. A.; Tarasov, I. S.; Asryan, L. V.

    2015-11-15

    The operating characteristics of a semiconductor quantum-well laser calculated using three models are compared. These models are (i) a model not taking into account differences between the electron and hole parameters and using the electron parameters for both types of charge carriers; (ii) a model, which does not take into account differences between the electron and hole parameters and uses the hole parameters for both types of charge carriers; and (iii) a model taking into account the asymmetry between the electron and hole parameters. It is shown that, at the same velocity of electron and hole capture into an unoccupied quantum well, the laser characteristics, obtained using the three models, differ considerably. These differences are due to a difference between the filling of the electron and hole subbands in a quantum well. The electron subband is more occupied than the hole subband. As a result, at the same velocities of electron and hole capture into an empty quantum well, the effective electron-capture velocity is lower than the effective hole-capture velocity. Specifically, it is shown that for the laser structure studied the hole-capture velocity of 5 × 10{sup 5} cm/s into an empty quantum well and the corresponding electron-capture velocity of 3 × 10{sup 6} cm/s into an empty quantum well describe the rapid capture of these carriers, at which the light–current characteristic of the laser remains virtually linear up to high pump-current densities. However, an electron-capture velocity of 5 × 10{sup 5} cm/s and a corresponding hole-capture velocity of 8.4 × 10{sup 4} cm/s describe the slow capture of these carriers, causing significant sublinearity in the light–current characteristic.

  20. Ballistic-electron-emission Microscopy of Semiconductor Heterostructures

    NASA Technical Reports Server (NTRS)

    Bell, L. Douglas; Narayanamurti, Venkatesh

    1997-01-01

    Balistic-electron-emission microscopy has developed from its beginning as a probe of Schottky barriers into a powerful nanometer-scale method for characterizing semiconductor interfaces and hot-electron transport.

  1. Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

    NASA Astrophysics Data System (ADS)

    Qing, Ke; Shaoyang, Tan; Songtao, Liu; Dan, Lu; Ruikang, Zhang; Wei, Wang; Chen, Ji

    2015-09-01

    A comprehensive design optimization of 1.55-μm high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency (ηi) while maintaining the low internal loss (αi) of the device, thereby achieving high power operation. Four different waveguide structures of broad area lasers were fabricated and characterized in depth. Through theoretical analysis and experiment verifications, we show that laser structures with stepped waveguide and thin upper separate confinement layer will result in high ηi and overall slope efficiency. A continuous wave (CW) single side output power of 160 mW was obtained for an uncoated laser with a 50-μm active area width and 1 mm cavity length. Project supported by the National Natural Science Foundation of China (Nos. 61274046, 61201103) and the National High Technology Research and Development Program of China (No. 2013AA014202).

  2. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  3. Low-peak-to-average power ratio and low-complexity asymmetrically clipped optical orthogonal frequency-division multiplexing uplink transmission scheme for long-reach passive optical network.

    PubMed

    Zhou, Ji; Qiao, Yaojun

    2015-09-01

    In this Letter, we propose a discrete Hartley transform (DHT)-spread asymmetrically clipped optical orthogonal frequency-division multiplexing (DHT-S-ACO-OFDM) uplink transmission scheme in which the multiplexing/demultiplexing process also uses the DHT algorithm. By designing a simple encoding structure, the computational complexity of the transmitter can be reduced from O(Nlog(2)(N)) to O(N). At the probability of 10(-3), the peak-to-average power ratio (PAPR) of 2-ary pulse amplitude modulation (2-PAM)-modulated DHT-S-ACO-OFDM is approximately 9.7 dB lower than that of 2-PAM-modulated conventional ACO-OFDM. To verify the feasibility of the proposed scheme, a 4-Gbit/s DHT-S-ACO-OFDM uplink transmission scheme with a 1∶64 way split has been experimentally implemented using 100-km standard single-mode fiber (SSMF) for a long-reach passive optical network (LR-PON). PMID:26368705

  4. Dissociating Averageness and Attractiveness: Attractive Faces Are Not Always Average

    ERIC Educational Resources Information Center

    DeBruine, Lisa M.; Jones, Benedict C.; Unger, Layla; Little, Anthony C.; Feinberg, David R.

    2007-01-01

    Although the averageness hypothesis of facial attractiveness proposes that the attractiveness of faces is mostly a consequence of their averageness, 1 study has shown that caricaturing highly attractive faces makes them mathematically less average but more attractive. Here the authors systematically test the averageness hypothesis in 5 experiments…

  5. XAFS in dilute magnetic semiconductors.

    PubMed

    Sun, Zhihu; Yan, Wensheng; Yao, Tao; Liu, Qinghua; Xie, Yi; Wei, Shiqiang

    2013-10-14

    X-Ray absorption fine structure (XAFS) spectroscopy has experienced a rapid development in the last four decades and has proved to be a powerful structure characterization technique in the study of local environments in condensed matter. In this article, we first introduce the XAFS basic principles including theory, data analysis and experiment in some detail. Then we attempt to make a review on the applications of XAFS to the study of atomic and electronic structure in dilute magnetic semiconductor (DMS) systems. The power of XAFS in characterizing this interesting material system, such as determining the occupation sites and distribution of the dopants, detecting the presence of metal clusters or secondary phases, as well as identifying the defect types and dopant valence, will be illuminated by selected examples. This review should be of interest both to newcomers in the DMS field and to an interdisciplinary community of researchers working in synthesis, characterization and utilization of DMS materials. PMID:23884341

  6. Semimetal/semiconductor nanocomposites for thermoelectrics.

    PubMed

    Lu, Hong; Burke, Peter G; Gossard, Arthur C; Zeng, Gehong; Ramu, Ashok T; Bahk, Je-Hyeong; Bowers, John E

    2011-05-24

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:In(x)Ga(1−x)Sb as a promising p-type thermoelectric material. Nanostructures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By co-doping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μ m thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed. PMID:21751469

  7. Semimetal/Semiconductor Nanocomposites for Thermoelectrics

    SciTech Connect

    Lu, Hong; Burke, Peter G.; Gossard, Arthur C.; Zeng, Gehong; Ramu, Ashok T.; Bahk, Je-Hyeong; Bowers, John E.

    2011-04-15

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:InxGa1-xSb as a promising p-type thermoelectric material. Nano­structures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By codoping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μm thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.

  8. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  9. Power Mosfets.

    NASA Astrophysics Data System (ADS)

    Chi, Min-Hwa

    A power MOSFET, a semiconductor power device based on modern IC technology, can offer some unique characteristics: high gain with high breakdown voltage, low on-resistance in low voltage devices, and fast switching speed. In response to a fast-growing interest and the need for better understanding, modeling, and design techniques, this thesis is a study of many aspects of power MOSFETs. Analytical models of all components of on-resistance are developed for both linear and cellular source geometries. Lower on-resistance can result from cellular geometries. Calculated results agree with experimental data. Based on these models, a design procedure to achieve minimum on-resistance is proposed. The dimension of source regions should first be minimized. The spacing between source cells is then varied until the resistance is minimized. Inherent limits on the switching speeds and losses of vertical power MOSFETs due to the drain capacitance are analyzed. While the drain capacitance is a function of the drain voltage, it is shown that speeds can be calculated with constant average capacitance. The per-cycle switching loss is similarly analyzed. Graphs of speeds and switching losses are presented as design aids. A model for the phenomenon of second breakdown in vertical power MOSFETs involving the avalanche multiplication of the channel current, the parasitic bipolar transistor, and the MOS body bias effect is proposed. This model is compared with experiments on four-terminal V-groove test devices in which the base can be accessed independently. Good agreement is achieved between calculated and measured boundaries of the safe operating area. A novel structure of power MOSFETs is proposed for low voltage applications where the on-resistance is the main concern. Theoretical analysis shows that this structure can result in many times smaller on-resistance than conventional structures. A fabrication procedure is proposed. The critical step, i.e., the deep vertical etching of

  10. Mechanism of Fermi-level stabilization in semiconductors

    SciTech Connect

    Walukiewicz, W.

    1988-03-15

    A striking correlation between the Fermi-level in heavily radiation damaged semiconductors and at metal-semiconductor interfaces is presented. The correlation provides critical evidence supporting the defect model for Schottky-barrier formation. The Fermi-level energy for both situations corresponds to the average energy of the sp/sup 3/ hybrid. In the case of GaAs, a detailed description of the Fermi-level stabilization caused by amphoteric dangling-bond-like defects is given

  11. Where the chips fall: environmental health in the semiconductor industry.

    PubMed Central

    Chepesiuk, R

    1999-01-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment. PMID:10464084

  12. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  13. Graphene/semiconductor silicon modified BiFeO3/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

    NASA Astrophysics Data System (ADS)

    Gupta, Surbhi; Medwal, Rohit; Limbu, Tej B.; Katiyar, Rajesh K.; Pavunny, Shojan P.; Tomar, Monika; Morell, G.; Gupta, Vinay; Katiyar, R. S.

    2015-08-01

    We report photovoltaic response of highly transparent graphene/BiFe0.95Si0.05O3 (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (ISC 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (VOC ˜ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, ISC of 0.63 mA and VOC of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of ISC and VOC with quick switching (<100 ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows.

  14. High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems

    NASA Astrophysics Data System (ADS)

    Slipchenko, Sergey; Podoskin, Aleksandr; Soboleva, Olga; Zakharov, Maxim S.; Bakhvalov, Kirill; Romanovich, Dmitrii; Pikhtin, Nikita; Tarasov, Il`ya; Bagaev, Timur; Ladugin, Maxim; Marmalyuk, Aleksandr; Simakov, Vladimir

    2016-03-01

    We present a new approach based on the integration of the functions of a high-efficiency current switch and a laser emitter into a single heterostructure as elements of time-of-flight (TOF) systems. The approach being developed employs the effect of an electrical bistability, which occurs in the general case in thyristor structures. We report recent results obtained in a study of the dynamic electrical and optical characteristics of the pulsed sources we developed. An effective generation of 2- to 100-ns laser pulses at a wavelength of 905 nm is demonstrated. The possibility of generating laser pulses shorter than 1 ns is considered. The maximum peak power reached values of 7 and 50 W for 10- and 100-ns pulses, respectively.

  15. SEMICONDUCTOR INTEGRATED CIRCUITS A 0.18 μm CMOS dual-band low power low noise amplifier for a global navigation satellite system

    NASA Astrophysics Data System (ADS)

    Bing, Li; Yiqi, Zhuang; Zhenrong, Li; Gang, Jin

    2010-12-01

    This paper presents a dual-band low noise amplifier for the receiver of a global navigation satellite system. The differences between single band and multi-band design methods are discussed. The relevant parameter analysis and the details of circuit design are presented. The test chip was implemented in a TSMC 0.18 μm 1P4M RF CMOS process. The LNA achieves a gain of 16.8 dB/18.9 dB on 1.27 GHz/1.575 GHz. The measured noise figure is around 1.5-1.7 dB on both bands. The LNA consumes less than 4.3 mA of current from a 1.8 V power supply. The measurement results show consistency with the design. And the LNA can fully satisfy the demands of the GNSS receiver.

  16. Semiconductor nanowire optical antenna solar absorbers.

    PubMed

    Cao, Linyou; Fan, Pengyu; Vasudev, Alok P; White, Justin S; Yu, Zongfu; Cai, Wenshan; Schuller, Jon A; Fan, Shanhui; Brongersma, Mark L

    2010-02-10

    Photovoltaic (PV) cells can serve as a virtually unlimited clean source of energy by converting sunlight into electrical power. Their importance is reflected in the tireless efforts that have been devoted to improving the electrical and structural properties of PV materials. More recently, photon management (PM) has emerged as a powerful additional means to boost energy conversion efficiencies. Here, we demonstrate an entirely new PM strategy that capitalizes on strong broad band optical antenna effects in one-dimensional semiconductor nanostructures to dramatically enhance absorption of sunlight. We show that the absorption of sunlight in Si nanowires (Si NWs) can be significantly enhanced over the bulk. The NW's optical properties also naturally give rise to an improved angular response. We propose that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material). These results significantly advance our understanding of the way sunlight is absorbed by one-dimensional semiconductor nanostructures and provide a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach is universal to any semiconductor and a wide range of nanostructures; as such, it provides a new PV platform technology. PMID:20078065

  17. Will Future Measurement Needs of the Semiconductor Industry Be Met?

    PubMed Central

    Bennett, Herbert S.

    2007-01-01

    We discuss the ability of the nation’s measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry’s powerful impact in the world’s macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry. PMID:27110452

  18. Organic semiconductors: fundamentals and applications

    NASA Astrophysics Data System (ADS)

    Kowalsky, W.; Becker, E.; Benstem, T.; Johannes, H.-H.; Metzdorf, D.; Neuner, H.; Schöbel, J.

    The first organic light emitting diodes (OLEDs) were demonstrated in 1987. To date they have been brought into marketable commodity. OLED matrix displays offer high contrast, wide viewing, angle and a broad temperature range at low power consumption. Due to the sensitivity of organic thin films, new structuring techniques had do be developed. In recent years in addition to advanced OLED activities, increasing effort has been put into the realization of organic integrated circuits for low-cost applications based on organic field-effect transistors. First transistors have shown the necessity to decrease operating voltage and to improve carrier mobility. Electrical current in organic devices is limited by the low conductivity of organic semiconductors and by energy barriers at the metal-organic semiconductor interface. Photoelectric measurements facilitate the determination of barrier height differences between various electrode setups. Further insight in the energy band alignment at organic heterointerfaces are gained by ultraviolet photoelectron spectroscopy. Energy transfer, in a doped OLED emitting layer can be investigated by time-resolved photo-luminescence measurements.

  19. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  20. Superconductivity in doped semiconductors

    NASA Astrophysics Data System (ADS)

    Bustarret, E.

    2015-07-01

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.