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Sample records for based metal semiconductor

  1. Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Noh, Youngwook; Polat, Kinyas; Kemal Okyay, Ali; Lee, Dongjin

    2015-12-01

    Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.

  2. Vacuum Violet Photo-Response of AlGaN-Based Metal-Semiconductor-Metal Photodetectors

    NASA Astrophysics Data System (ADS)

    Zhou, Dong; Lu, Hai; Chen, Dun-Jun; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Dou; Li, Liang

    2013-11-01

    Al0.5Ga0.5 N-based metal-semiconductor-metal photodetectors (PDs) with a large device area of 5 × 5 mm2 are fabricated on a sapphire substrate, which are tested for vacuum ultraviolet light detection by using a synchrotron radiation source. The PD exhibits low dark current of less than 1 pA under 30 V bias and a spectral cutoff around 260 nm, corresponding to the energy bandgap of Al0.5Ga0.5N. A peak photo-responsivity of 14.68 mA/W at 250 nm with a rejection ratio (250/360 nm) of more than four orders of magnitude is obtained under 30 V bias. For wavelength less than 170 nm, the photoresponsivity of the PD is found to increase as wavelength decreases, which is likely caused by the enhanced photoemission effect.

  3. Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Heng-Yu; Tseng, Chun-Yen

    2015-09-01

    In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode, and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 1010 cmHz0.5W-1 to 2480 and 2.43 × 1010 cmHz0.5W-1, respectively.

  4. Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors.

    PubMed

    Lee, Ching-Ting; Lin, Heng-Yu; Tseng, Chun-Yen

    2015-01-01

    In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode, and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 10(10) cmHz(0.5)W(-1) to 2480 and 2.43 × 10(10) cmHz(0.5)W(-1), respectively. PMID:26324247

  5. Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tekcan, Burak; Ozgit-Akgun, Cagla; Bolat, Sami; Biyikli, Necmi; Okyay, Ali Kemal

    2014-10-01

    Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices.

  6. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors.

    PubMed

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  7. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    PubMed Central

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  8. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    NASA Astrophysics Data System (ADS)

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-05-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities.

  9. Light-induced resistive switching in silicon-based metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N.; Antonov, I. N.; Kasatkin, A. P.

    2016-05-01

    We have studied light-induced resistive switching in metal-insulator-semiconductor structures based on silicon covered with a tunneling-thin SiO2 layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.

  10. Influence of Deuterium Treatments on the Polysilicon-Based Metal-Semiconductor-Metal Photodetector.

    PubMed

    Lee, Jae-Sung

    2016-06-01

    The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodetector structure, depending on deuterium treatment, is analyzed by means of the dark current and the photocurrent measurements. Al/Ti bilayer was used as Schottky metal. The deuterium incorporation into the absorption layer, undoped polysilicon, was achieved with annealing process and with ion implantation process, respectively. In the photocurrent-to-dark current ratio measurement, deuterium-ion-implanted photodetector shows over hundred higher than the control device. It means that the heightening of the Schottky barrier and the passivation of grain boundary trap were achieved effectively through the deuterium ion implantation process. PMID:27427689

  11. Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors

    NASA Astrophysics Data System (ADS)

    Tas, M.; Şaşıoǧlu, E.; Galanakis, I.; Friedrich, C.; Blügel, S.

    2016-05-01

    Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the G W approximation within the framework of the FLAPW method, we study the quasiparticle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the s p -electron based semiconductors such as Si and GaAs, in these systems, the many-body corrections have a minimal effect on the electronic band structure and the energy band gap increases by less than 0.2 eV, which makes the starting point density functional theory (DFT) a good approximation for the description of electronic and optical properties of these materials. Furthermore, the band gap can be tuned either by the variation of the lattice parameter or by the substitution of the s p -chemical element.

  12. Retinal Stimulation on Rabbit Using Complementary Metal Oxide Semiconductor Based Multichip Flexible Stimulator toward Retinal Prosthesis

    NASA Astrophysics Data System (ADS)

    Tokuda, Takashi; Asano, Ryosuke; Sugitani, Sachie; Taniyama, Mari; Terasawa, Yasuo; Nunoshita, Masahiro; Nakauchi, Kazuaki; Fujikado, Takashi; Tano, Yasuo; Ohta, Jun

    2008-04-01

    The Functionality of a complementary metal oxide semiconductor (CMOS) LSI-based, multichip flexible retinal stimulator was demonstrated in retinal stimulation experiments on rabbits. A 1×4-configured multichip stimulator was fabricated for application to experiments on animals. An experimental procedure including surgical operations was developed, and retinal stimulation was performed with the fabricated multichip stimulator. Neural responses on the visual cortex were successfully evoked by the fabricated stimulator. The stimulator is confirmed to be applicable to acute animal experiments.

  13. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times. PMID:27524362

  14. Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors.

    PubMed

    Rim, You Seung; Bae, Sang-Hoon; Chen, Huajun; Yang, Jonathan L; Kim, Jaemyung; Andrews, Anne M; Weiss, Paul S; Yang, Yang; Tseng, Hsian-Rong

    2015-12-22

    Conformal bioelectronics enable wearable, noninvasive, and health-monitoring platforms. We demonstrate a simple and straightforward method for producing thin, sensitive In2O3-based conformal biosensors based on field-effect transistors using facile solution-based processing. One-step coating via aqueous In2O3 solution resulted in ultrathin (3.5 nm), high-density, uniform films over large areas. Conformal In2O3-based biosensors on ultrathin polyimide films displayed good device performance, low mechanical stress, and highly conformal contact determined using polydimethylsiloxane artificial skin having complex curvilinear surfaces or an artificial eye. Immobilized In2O3 field-effect transistors with self-assembled monolayers of NH2-terminated silanes functioned as pH sensors. Functionalization with glucose oxidase enabled d-glucose detection at physiologically relevant levels. The conformal ultrathin field-effect transistor biosensors developed here offer new opportunities for future wearable human technologies. PMID:26498319

  15. Graphene-based half-metal and spin-semiconductor for spintronic applications

    NASA Astrophysics Data System (ADS)

    Qi, Jingshan; Chen, Xiaofang; Hu, Kaige; Feng, Ji

    2016-03-01

    In this letter we propose a strategy to make graphene become a half-metal or spin-semiconductor by combining the magnetic proximity effects and sublattice symmetry breaking in graphone/graphene and graphone/graphene/BN heterostructures. Exchange interactions lift the spin degeneracy and sublattice symmetry breaking opens a band gap in graphene. More interestingly, the gap opening depends on the spin direction and the competition between the sublattice asymmetry and exchange field determines the system is a half-metal or a spin-semiconductor. By first-principles calculations and a low-energy effective model analysis, we elucidate the underlying physical mechanism of spin-dependent gap opening and spin degeneracy splitting. This offers an alternative practical platform for graphene-based spintronics.

  16. Graphene-based half-metal and spin-semiconductor for spintronic applications.

    PubMed

    Qi, Jingshan; Chen, Xiaofang; Hu, Kaige; Feng, Ji

    2016-03-31

    In this letter we propose a strategy to make graphene become a half-metal or spin-semiconductor by combining the magnetic proximity effects and sublattice symmetry breaking in graphone/graphene and graphone/graphene/BN heterostructures. Exchange interactions lift the spin degeneracy and sublattice symmetry breaking opens a band gap in graphene. More interestingly, the gap opening depends on the spin direction and the competition between the sublattice asymmetry and exchange field determines the system is a half-metal or a spin-semiconductor. By first-principles calculations and a low-energy effective model analysis, we elucidate the underlying physical mechanism of spin-dependent gap opening and spin degeneracy splitting. This offers an alternative practical platform for graphene-based spintronics. PMID:26933773

  17. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-07-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis.

  18. Hot-electron-based solar energy conversion with metal-semiconductor nanodiodes.

    PubMed

    Lee, Young Keun; Lee, Hyosun; Lee, Changhwan; Hwang, Euyheon; Park, Jeong Young

    2016-06-29

    Energy dissipation at metal surfaces or interfaces between a metal and a dielectric generally results from elementary excitations, including phonons and electronic excitation, once external energy is deposited to the surface/interface during exothermic chemical processes or an electromagnetic wave incident. In this paper, we outline recent research activities to develop energy conversion devices based on hot electrons. We found that photon energy can be directly converted to hot electrons and that hot electrons flow through the interface of metal-semiconductor nanodiodes where a Schottky barrier is formed and the energy barrier is much lower than the work function of the metal. The detection of hot electron flow can be successfully measured using the photocurrent; we measured the photoyield of photoemission with incident photons-to-current conversion efficiency (IPCE). We also show that surface plasmons (i.e. the collective oscillation of conduction band electrons induced by interaction with an electromagnetic field) are excited on a rough metal surface and subsequently decay into secondary electrons, which gives rise to enhancement of the IPCE. Furthermore, the unique optical behavior of surface plasmons can be coupled with dye molecules, suggesting the possibility for producing additional channels for hot electron generation. PMID:27168177

  19. Silicon metal-semiconductor-metal photodetector

    DOEpatents

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1995-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  20. Silicon metal-semiconductor-metal photodetector

    DOEpatents

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1997-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  1. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  2. Highly sensitive sensors for alkali metal ions based on complementary-metal-oxide-semiconductor-compatible silicon nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Guo-Jun; Agarwal, Ajay; Buddharaju, Kavitha D.; Singh, Navab; Gao, Zhiqiang

    2007-06-01

    Highly sensitive sensors for alkali metal ions based on complementary-metal-oxide- semiconductor-compatible silicon nanowires (SiNWs) with crown ethers covalently immobilized on their surface are presented. A densely packed organic monolayer terminated with amine groups is introduced to the SiNW surface via hydrosilylation. Amine-modified crown ethers, acting as sensing elements, are then immobilized onto the SiNWs through a cross-linking reaction with the monolayer. The crown ether-functionalized SiNWs recognize Na+ and K+ according to their complexation ability to the crown ethers. The SiNW sensors are highly selective and capable of achieving an ultralow detection limit down to 50nM, over three orders of magnitude lower than that of conventional crown ether-based ion-selective electrodes.

  3. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer

    NASA Astrophysics Data System (ADS)

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  4. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

    PubMed

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene. PMID:24407201

  5. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting.

    PubMed

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-01-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis. PMID:27404510

  6. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    PubMed Central

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-01-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis. PMID:27404510

  7. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  8. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-01

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al2O3 or HfO2 dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO2 based capacitors compared to Al2O3 based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  9. Electrical Characteristics and Interface Properties of III Nitride-Based Metal-Insulator-Semiconductor Structure

    SciTech Connect

    Mahyuddin, A.; Hassan, Z.; Yusof, Y.; Cheong, K. Y.

    2010-07-07

    In this work, III-Nitride based metal-insulator-semiconductor (MIS) structure has been studied using AlN/GaN heterostructures on Si (111) with AlN buffer layer grown by plasma-assisted molecular beam epitaxy (MBE). The structural and electrical characteristics of the films were studied through high resolution x-ray diffraction (HRXRD), capacitance-voltage (C-V) and current-voltage (I-V) measurements. The value of flat-band voltage was -0.7 V. A total fixed oxide charge density of 2.73x10{sup 11} cm{sup -2} was estimated. Terman's method was used to obtain the density of interface state in the MIS structure. The analysis showed low interface state density values of 3.66x10{sup 11} cm{sup -2} eV{sup -1}.

  10. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  11. Hydrogen in semiconductors and metals

    SciTech Connect

    Nickel, N.H.; Jackson, W.B.; Bowman, R.C.; Leisure, R.G.

    1998-12-31

    Major highlights of the conference include further understanding of the structure of extended hydrogen clusters in semiconductors, switchable optical properties of metal-hydride films, reversible changes in the magnetic coupling in metallic superlattices, and increased lifetime of integrated circuits due to deuterium device passivation. Continued progress has also been achieved in understanding hydrogenation of defects in compound semiconductors and on surfaces. Total energy calculations in semiconductors have progressed sufficiently to predict energetics and vibration frequencies as measured by experiment. Similarly, electronic structure calculations of hydrogen-metal systems provide a deeper understanding of stability, bonding, and phase changes. Various nuclear techniques have been refined to yield important information regarding the concentration and transport of hydrogen in condensed matter. Finally, the interaction of hydrogen to create thermal donors has been used to create deep p-n junctions without the need for deep diffusion of dopants. The volume has been organized along the order of presentation within the conference. Similar methods and subjects have been grouped together. The authors have attempted to keep similar metal and semiconductor papers together in order to further promote cross-fertilization between the fields. Major categories include hydrogen on surfaces, theory and thermodynamics, hydrogen transport phenomena, nuclear characterization techniques, compound semiconductors, metal bulk, devices and applications, bulk silicon, and carbon and carbon-like materials. Separate abstracts were prepared for most papers.

  12. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  13. High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Meneghesso, Gaudenzio; Meneghini, Matteo; Silvestri, Riccardo; Vanmeerbeek, Piet; Moens, Peter; Zanoni, Enrico

    2016-01-01

    This paper presents an analysis of the high voltage trapping processes that take place in high-electron mobility transistors based on GaN, with a metal-insulator-semiconductor (MIS) structure. The study is based on combined pulsed and transient measurements, carried out with trapping voltages in the range from 50 to 500 V. The results indicate that: (i) dynamic Ron is maximum for trapping voltages between 200 and 300 V, and decreases for higher voltage levels; (ii) Ron-transient measurements reveal the presence of a dominant trap with activation energy Ea1 = 0.93 eV and of a second trap with activation energy equal to Ea2 = 0.61 eV; (iii) the deep level transient spectroscopy (DLTS) signal associated to trap Ea1 is completely suppressed for high trapping voltages (VDS = 500 V). The results are interpreted by considering that the trap Ea1 is located in the buffer, and originates from CN defects. The exposure to high drain voltages may favor the depletion of such traps, due to a field-assisted de-trapping process or to the presence of vertical leakage paths.

  14. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2002-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  15. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  16. Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter.

    PubMed

    Sridhar, Manoj; Xu, Dongyan; Kang, Yuejun; Hmelo, Anthony B; Feldman, Leonard C; Li, Dongqing; Li, Deyu

    2008-05-15

    We report the detailed characterization of an ultrasensitive microfluidic device used to detect the translocation of small particles through a sensing microchannel. The device connects a fluidic circuit to the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET) and detects particles by monitoring the MOSFET drain current modulation instead of the modulation in the ionic current through the sensing channel. The minimum volume ratio of the particle to the sensing channel detected is 0.006%, which is about ten times smaller than the lowest detected volume ratio previously reported in the literature. This volume ratio is detected at a noise level of about 0.6% of the baseline MOSFET drain current, clearly showing the amplification effects from the fluidic circuits and the MOSFETs. We characterize the device sensitivity as a function of the MOSFET gate potential and show that its sensitivity is higher when the MOSFET is operating below its threshold gate voltage than when it is operating above the threshold voltage. In addition, we demonstrate that the device sensitivity linearly increases with the applied electrical bias across the fluidic circuit. Finally, we show that polystyrene beads and glass beads with similar sizes can be distinguished from each other based on their different translocation times, and the size distribution of microbeads can be obtained with accuracy comparable to that of direct scanning electron microscopy measurements. PMID:19479001

  17. Photocapacitive light sensor based on metal-YMnO3-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Bogusz, A.; Choudhary, O. S.; Skorupa, I.; Bürger, D.; Lawerenz, A.; Lei, Y.; Zeng, H.; Abendroth, B.; Stöcker, H.; Schmidt, O. G.; Schmidt, H.

    2016-02-01

    Technology of light sensors, due to the wide range of applications, is a dynamically developing branch of both science and industry. This work presents concept of photodetectors based on a metal-ferroelectric-insulator-semiconductor, a structure which has not been thoroughly explored in the field of photodetectors. Functionality of the presented light sensor exploits the effects of photocapacitive phenomena, ferroelectric polarization, and charge trapping. This is accomplished by an interplay between polarization alignment, subsequent charge distribution, and charge trapping processes under given illumination condition and gate voltage. Change of capacitance serves as a read out parameter indicating the wavelength and intensity of the illuminating light. The operational principle of the proposed photocapacitive light sensor is demonstrated in terms of capacitance-voltage and capacitance-time characteristics of an Al/YMnO3/SiNx/p-Si structure exposed to green, red, and near infrared light. Obtained results are discussed in terms of optical properties of YMnO3 and SiNx layers contributing to the performance of photodetectors. Presented concept of light sensing might serve as the basis for the development of more advanced photodetectors.

  18. Using metal complex-labeled peptides for charge transfer-based biosensing with semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Medintz, Igor L.; Pons, Thomas; Trammell, Scott A.; Blanco-Canosa, Juan B.; Dawson, Philip E.; Mattoussi, Hedi

    2009-02-01

    Luminescent colloidal semiconductor quantum dots (QDs) have unique optical and photonic properties and are highly sensitive to charge transfer in their surrounding environment. In this study we used synthetic peptides as physical bridges between CdSe-ZnS core-shell QDs and some of the most common redox-active metal complexes to understand the charge transfer interactions between the metal complexes and QDs. We found that QD emission underwent quenching that was highly dependent on the choice of metal complex used. We also found that quenching traces the valence or number of metal complexes brought into close proximity of the nanocrystal surface. Monitoring of the QD absorption bleaching in the presence of the metal complex provided insight into the charge transfer mechanism. The data suggest that two distinct charge transfer mechanisms can take place. One directly to the QD core states for neutral capping ligands and a second to surface states for negatively charged capping ligands. A basic understanding of the proximity driven charge-transfer and quenching interactions allowed us to construct proteolytic enzyme sensing assemblies with the QD-peptide-metal complex conjugates.

  19. Mechanisms of current flow in metal-semiconductor ohmic contacts

    SciTech Connect

    Blank, T. V. Gol'dberg, Yu. A.

    2007-11-15

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed.

  20. DNA-decorated carbon-nanotube-based chemical sensors on complementary metal oxide semiconductor circuitry

    NASA Astrophysics Data System (ADS)

    Chen, Chia-Ling; Yang, Chih-Feng; Agarwal, Vinay; Kim, Taehoon; Sonkusale, Sameer; Busnaina, Ahmed; Chen, Michelle; Dokmeci, Mehmet R.

    2010-03-01

    We present integration of single-stranded DNA (ss-DNA)-decorated single-walled carbon nanotubes (SWNTs) onto complementary metal oxide semiconductor (CMOS) circuitry as nanoscale chemical sensors. SWNTs were assembled onto CMOS circuitry via a low voltage dielectrophoretic (DEP) process. Besides, bare SWNTs are reported to be sensitive to various chemicals, and functionalization of SWNTs with biomolecular complexes further enhances the sensing specificity and sensitivity. After decorating ss-DNA on SWNTs, we have found that the sensing response of the gas sensor was enhanced (up to ~ 300% and ~ 250% for methanol vapor and isopropanol alcohol vapor, respectively) compared with bare SWNTs. The SWNTs coupled with ss-DNA and their integration on CMOS circuitry demonstrates a step towards realizing ultra-sensitive electronic nose applications.

  1. DNA-decorated carbon-nanotube-based chemical sensors on complementary metal oxide semiconductor circuitry.

    PubMed

    Chen, Chia-Ling; Yang, Chih-Feng; Agarwal, Vinay; Kim, Taehoon; Sonkusale, Sameer; Busnaina, Ahmed; Chen, Michelle; Dokmeci, Mehmet R

    2010-03-01

    We present integration of single-stranded DNA (ss-DNA)-decorated single-walled carbon nanotubes (SWNTs) onto complementary metal oxide semiconductor (CMOS) circuitry as nanoscale chemical sensors. SWNTs were assembled onto CMOS circuitry via a low voltage dielectrophoretic (DEP) process. Besides, bare SWNTs are reported to be sensitive to various chemicals, and functionalization of SWNTs with biomolecular complexes further enhances the sensing specificity and sensitivity. After decorating ss-DNA on SWNTs, we have found that the sensing response of the gas sensor was enhanced (up to approximately 300% and approximately 250% for methanol vapor and isopropanol alcohol vapor, respectively) compared with bare SWNTs. The SWNTs coupled with ss-DNA and their integration on CMOS circuitry demonstrates a step towards realizing ultra-sensitive electronic nose applications. PMID:20139486

  2. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

    PubMed

    Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

    2014-10-20

    In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication. PMID:25607316

  3. The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-05-01

    Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon—disorder induced gap states and border traps. While the gap states are located at the semiconductor side of the interface, the border traps are related to the dielectric side. The study of Al2O3, HfO2, and an intermediate composition of HfxAlyO deposited on InGaAs enabled us to find a correlation between the dispersion and the dielectric/InGaAs band offset. At the same time, no change in the dispersion was observed after applying an effective pre-deposition treatment which results in significant reduction of the interface states. Both observations prove that border traps are the physical origin of the dispersion in accumulation in InGaAs based metal-oxide-semiconductor gate stacks.

  4. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2013-12-14

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0 μ{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33 meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  5. Noble metal-free hydrogen-evolving photocathodes based on small molecule organic semiconductors.

    PubMed

    Morozan, A; Bourgeteau, T; Tondelier, D; Geffroy, B; Jousselme, B; Artero, V

    2016-09-01

    Organic semiconductors have great potential for producing hydrogen in a sustainable and economically-viable manner because they rely on readily available materials with highly tunable properties. We demonstrate here the relevance of heterojunctions to the construction of H2-evolving photocathodes, exclusively based on earth-abundant elements. Boron subnaphthalocyanine chloride proved a very promising acceptor in that perspective. It absorbs a part of the solar spectrum complementary to α-sexithiophene as a donor, thus generating large photocurrents and providing a record onset potential for light-driven H2 evolution under acidic aqueous conditions using a nanoparticulate amorphous molybdenum sulfide catalyst. PMID:27455142

  6. Noble metal-free hydrogen-evolving photocathodes based on small molecule organic semiconductors

    NASA Astrophysics Data System (ADS)

    Morozan, A.; Bourgeteau, T.; Tondelier, D.; Geffroy, B.; Jousselme, B.; Artero, V.

    2016-09-01

    Organic semiconductors have great potential for producing hydrogen in a sustainable and economically-viable manner because they rely on readily available materials with highly tunable properties. We demonstrate here the relevance of heterojunctions to the construction of H2-evolving photocathodes, exclusively based on earth-abundant elements. Boron subnaphthalocyanine chloride proved a very promising acceptor in that perspective. It absorbs a part of the solar spectrum complementary to α-sexithiophene as a donor, thus generating large photocurrents and providing a record onset potential for light-driven H2 evolution under acidic aqueous conditions using a nanoparticulate amorphous molybdenum sulfide catalyst.

  7. Interfaces in semiconductor/metal radial superlattices

    SciTech Connect

    Deneke, Christoph; Sigle, Wilfried; Eigenthaler, Ulrike; Aken, Peter A. van; Schuetz, Gisela; Schmidt, Oliver G.

    2007-06-25

    Semiconductor/metal radial superlattices are produced by the roll-up of inherently strained InGaAs/Ti/Au as well as InAlGaAs/GaAs/Cr films. Cross sections of the obtained structures are prepared and investigated in detail by diverse transmission electron microscopy as well as microanalysis techniques. Special attention is paid to the interfaces of the semiconductor/metal hybrid superlattice. The study reveals amorphous, noncrystalline layers for the semiconductor/metal as well as for the metal/semiconductor interface. The chemical analysis suggests that the observed interlayers are oxides giving rise to a semiconductor/oxide/metal/oxide superlattice rather than a pure semiconductor/metal superlattice.

  8. Nitride-Based UV Metal-Insulator-Semiconductor Photodetector with Liquid-Phase-Deposition Oxide

    NASA Astrophysics Data System (ADS)

    Hwang, J. D.; Yang, Gwo Huei; Yang, Yuan Yi; Yao, Pin Cuan

    2005-11-01

    A low-temperature (30-40°C), low-cost and reliable method of liquid phase deposition (LPD) has been employed to grow SiO2 layers on GaN. The LPD process uses a supersaturated acid aqueous solution of hydrofluosilicic (H2SiF6) as a source liquid and an aqueous solution of boric acid (H3BO3) as a deposition rate controller. In this study, the LPD SiO2 was prepared at 40°C with concentrations of H2SiF6 and H3BO3 at 0.2 and 0.01 M, respectively. The minimum interface-trap density, Dit, of a metal-insulator-semiconductor (MIS) capacitor with a structure of Al/20 nm LPD-SiO2/n-GaN was estimated to be 8.4× 1011 cm-2 V-1. Furthermore, a MIS photodetector with a 10-nm-thick LPD-SiO2 layer has been fabricated successfully. The dark current density was as low as 4.41× 10-6 A/cm2 for an applied field of 4 MV/cm. A maximum responsivity of 0.112 A/W was observed for incident ultraviolet light of 366 nm with an intensity of 4.15 mW/cm2. Defect-assisted tunneling was invoked to explain these results.

  9. Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived TiO2 films

    NASA Astrophysics Data System (ADS)

    Xie, Yannan; Huang, Huolin; Yang, Weifeng; Wu, Zhengyun

    2011-01-01

    The titanium dioxide (TiO2) films prepared by sol-gel processing were used to fabricate metal-semiconductor-metal ultraviolet photodetectors. A very low dark current of 5.38 pA (current density of 3.84 nA/cm2) at 5 V bias is obtained, which is ascribed to the high effective Schottky barrier between Au and TiO2 films. The x-ray photoelectron spectroscopy analysis demonstrates that the concentration of oxygen vacancies is very low in the surface of the TiO2 films, which is responsible for the high effective Schottky barrier. The devices exhibit a cutoff wavelength at about 380 nm and a large UV-to-visible rejection ratio (340 versus 400 nm) of three orders of magnitude. The peak responsivity of the devices is 17.5 A/W at 5 V bias, indicating the presence of internal photoconductive gain induced by desorption of oxygen on the TiO2 surface.

  10. Dilute magnetic semiconductors based on wide bandgap SiO 2 with and without transition metal elements

    NASA Astrophysics Data System (ADS)

    Dinh, Van An; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2005-10-01

    Material designs based on the first principle calculations of electronic structures are proposed for α-quartz SiO 2-based dilute magnetic semiconductors. The incorporation of transition metals (TMs) into Si sites and of the non-TM atoms into O sites are treated for various concentrations. At temperatures higher than room temperature, most of the TM-doped SiO 2 have no magnetism, yet Si 1- xMn xO 2 might achieve the ferromagnetism. The substitution of O by non-TM atoms as C or N also induces the magnetism in the host. However, while the N's substitution induces the ferromagnetism, C's substitution causes an anti-ferromagnetic behavior in the host material SiO 2.

  11. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

    NASA Astrophysics Data System (ADS)

    Kodama, Masahito; Sugimoto, Masahiro; Hayashi, Eiko; Soejima, Narumasa; Ishiguro, Osamu; Kanechika, Masakazu; Itoh, Kenji; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

    2008-02-01

    A novel method for fabricating trench structures on GaN was developed. A smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant. A U-shape trench with the (1100) plane side walls was formed with dry etching and the TMAH wet etching. A U-shape trench gate metal oxide semiconductor field-effect transistor (MOSFET) was also fabricated using the novel etching technology. This device has the excellent normally-off operation of drain current-gate voltage characteristics with the threshold voltage of 10 V. The drain breakdown voltage of 180 V was obtained. The results indicate that the trench gate structure can be applied to GaN-based transistors.

  12. Capacitance-voltage characteristics of Si and Ge nanomembrane based flexible metal-oxide-semiconductor devices under bending conditions

    NASA Astrophysics Data System (ADS)

    Cho, Minkyu; Seo, Jung-Hun; Park, Dong-Wook; Zhou, Weidong; Ma, Zhenqiang

    2016-06-01

    Metal-oxide-semiconductor (MOS) device is the basic building block for field effect transistors (FET). The majority of thin-film transistors (TFTs) are FETs. When MOSFET are mechanically bent, the MOS structure will be inevitably subject to mechanical strain. In this paper, flexible MOS devices using single crystalline Silicon (Si) and Germanium (Ge) nanomembranes (NM) with SiO2, SiO, and Al2O3 dielectric layers are fabricated on a plastic substrate. The relationships between semiconductor nanomembranes and various oxide materials are carefully investigated under tensile/compressive strain. The flatband voltage, threshold voltage, and effective charge density in various MOS combinations revealed that Si NM-SiO2 configuration shows the best interface charge behavior, while Ge NM-Al2O3 shows the worst. This investigation of flexible MOS devices can help us understand the impact of charges in the active region of the flexible TFTs and capacitance changes under the tensile/compressive strains on the change in electrical characteristics in flexible NM based TFTs.

  13. Performance improvement of GaN-based metal-semiconductor-metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

    NASA Astrophysics Data System (ADS)

    Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin

    2014-01-01

    A simple thermal cycle annealing (TCA) process was used to improve the quality of GaN grown on a Si substrate. The X-ray diffraction (XRD) and etch pit density (EPD) results revealed that using more process cycles, the defect density cannot be further reduced. However, the performance of GaN-based metal-semiconductor-metal (MSM) photodiodes (PDs) prepared on Si substrates showed significant improvement. With a two-cycle TCA process, it is found that the dark current of the device was only 1.46 × 10-11 A, and the photo-to-dark-current contrast ratio was about 1.33 × 105 at 5 V. Also, the UV/visible rejection ratios can reach as high as 1077.

  14. Metal oxide semiconductors for solar energy harvesting

    NASA Astrophysics Data System (ADS)

    Thimsen, Elijah James

    The correlation between energy consumption and human development illustrates the importance of this societal resource. We will consume more energy in the future. In light of issues with the status quo, such as climate change, long-term supply and security, solar energy is an attractive source. It is plentiful, virtually inexhaustible, and can provide more than enough energy to power society. However, the issue with producing electricity and fuels from solar energy is that it is expensive, primarily from the materials (silicon) used in building the cells. Metal oxide semiconductors are an attractive class of materials that are extremely low cost and can be produced at the scale needed to meet widespread demand. An industrially attractive thin film synthesis process based on aerosol deposition was developed that relies on self-assembly to afford rational control over critical materials parameters such as film morphology and nanostructure. The film morphology and nanostructure were found to have dramatic effects on the performance of TiO2-based photovoltaic dye-sensitized solar cells. Taking a cue from nature, to overcome the spatial and temporal mismatch between the supply of sunlight and demand for energy consumption, it is desirable to produce solar fuels such as hydrogen from photoelectrochemical water splitting. The source of water is important---seawater is attractive. The fundamental reaction mechanism for TiO2-based cells is discussed in the context of seawater splitting. There are two primary issues with producing hydrogen by photoelectrochemical water splitting using metal-oxide semiconductors: visible light activity and spontaneous activity. To address the light absorption issue, a combined theory-experiment approach was taken to understand the fundamental role of chemical composition in determining the visible light absorption properties of mixed metal-oxide semiconductors. To address the spontaneous activity issue, self-biasing all oxide p/n bulk

  15. HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

    NASA Astrophysics Data System (ADS)

    Kim, Hyoung-Sub; Ok, I.; Zhang, M.; Zhu, F.; Park, S.; Yum, J.; Zhao, H.; Lee, Jack C.; Majhi, Prashant

    2008-09-01

    In this letter, we present our experimental results of HfO2-based n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on indium phosphide (InP) substrates using a thin germanium (Ge) interfacial passivation layer (IPL). We found that MOSCAPs on n-InP substrates showed good C-V characteristics such as a small capacitance equivalent thickness (14Å ), a small frequency dispersion (<10% and <200mV), and a low dielectric leakage current (˜5×10-4A/cm2 at Vg=1.5V), whereas MOSCAPs on p-InP exhibited poor characteristics, implying severe Fermi level pinning. It was also found that InP was more vulnerable to a high temperature process such that C-V curves showed a characteristic "bump" and inversion capacitance at relatively high frequencies. From n-channel MOSFETs on a semi-insulating InP substrate using Ge IPL, HfO2, and TaN gate electrodes, excellent electrical characteristics such as a large transconductance (9.3mS /mm) and large drain currents (12.3mA/mm at Vd=2V and Vg=Vth+2V) were achieved, which are comparable to other works.

  16. Optical Properties of Planar Nanostructures Based on Semiconductor Quantum Dots and Plasmonic Metal Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bakanov, A. G.; Toropov, N. A.; Vartanyan, T. A.

    2016-03-01

    The optical properties of a composite material consisting of a thin polymer film, which is activated by semiconductor CdSe/ZnS quantum dots (QDs) and silver nanoparticles, on a transparent dielectric substrate have been investigated. It is revealed that the presence of silver nanoparticles leads to an increase in the QD absorption (by a factor of 4) and in the fluorescence intensity (by a factor of 10), whereas the fluorescence time drops by a factor of about 10. Excitation of the composite medium by a pulsed laser is found to result in narrowing of the fluorescence band and a sublinear dependence of its intensity on the pulse energy. In the absence of silver nanoparticles, the fluorescence spectrum of QDs is independent of the excitation-pulse energy density, and the fluorescence intensity depends linearly on the pulse energy in the entire range of energy densities, up to 75 mJ/cm2.

  17. CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.

    PubMed

    Jin, Weifeng; Zhang, Kun; Gao, Zhiwei; Li, Yanping; Yao, Li; Wang, Yilun; Dai, Lun

    2015-06-24

    Novel CdSe nanowire (NW)-based flexible devices, including Schottky diodes, metal-semiconductor field-effect transistors (MESFETs), and inverters, have been fabricated and investigated. The turn-on voltage of a typical Schottky diode is about 0.7 V, and the rectification ratio is larger than 1 × 10(7). The threshold voltage, on/off current ratio, subthreshold swing, and peak transconductance of a typical MESFET are about -0.3 V, 4 × 10(5), 78 mV/dec, and 2.7 μS, respectively. The inverter, constructed with two MESFETs, exhibits clear inverting behavior with the gain to be about 28, 34, and 38, at the supply voltages (V(DD)) of 3, 5, and 7 V, respectively. The inverter also shows good dynamic behavior. The rising and falling times of the output signals are about 0.18 and 0.09 ms, respectively, under 1000 Hz square wave signals input. The performances of the flexible devices are stable and reliable under different bending conditions. Our work demonstrates these flexible NW-based Schottky diodes, MESFETs, and inverters are promising candidate components for future portable transparent nanoelectronic devices. PMID:26061530

  18. A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

    NASA Astrophysics Data System (ADS)

    Kiumarsi, Hamid; Mizuochi, Yutaka; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2012-02-01

    A three-stage inverter-based stacked power amplifier (PA) in complementary metal oxide semiconductor (CMOS) process is proposed to overcome low breakdown voltage problem of scaled CMOS technologies. Unlike previous reported stacked PAs which radio frequency choke (RFC) was inevitable, we proposed stacked nMOS and pMOS transistors which effectively eliminates use of RFC. By properly setting self-biased circuits' and transistors' parameters, output impedance could reach up to 50 Ω which together with not employing the RFC makes this topology very appealing for the scalable PA realization. As a proof of concept, a three-stage PA using 65 nm CMOS technology is implemented. With a 6 V power supply for the third stage, the fabricated PA shows a small-signal gain of 36 dB, a saturated output power of 16 dBm and a maximum power added efficiency of 10% at 1 GHz. Using a 7.5 V of power supply, saturated output power reaches 18 dBm. To the best of our knowledge, this is the first reported inverter-based stacked PA.

  19. C-V measurements of micron diameter metal-oxide-semiconductor capacitors using a scanning-electron-microscope-based nanoprobe.

    PubMed

    Zheng, T; Jia, H; Wallace, R M; Gnade, B E

    2007-10-01

    The C-V electrical characterization of microstructures on a standard probe station is limited by the magnification of the imaging system and the precision of the probe manipulators. To overcome these limitations, we examine the combination of in situ electrical probing and a dual column scanning electron microscope/focused ion beam system. The imaging parameters and probing procedures are carefully chosen to reduce e-beam damage to the metal oxide semiconductor capacitor device under test. Estimation of shunt capacitance is critical when making femtofarad level measurements. C-V measurements of micron size metal-oxide-silicon capacitors are demonstrated. PMID:17979444

  20. Chip-scale fluorescence microscope based on a silo-filter complementary metal-oxide semiconductor image sensor.

    PubMed

    Ah Lee, Seung; Ou, Xiaoze; Lee, J Eugene; Yang, Changhuei

    2013-06-01

    We demonstrate a silo-filter (SF) complementary metal-oxide semiconductor (CMOS) image sensor for a chip-scale fluorescence microscope. The extruded pixel design with metal walls between neighboring pixels guides fluorescence emission through the thick absorptive filter to the photodiode of a pixel. Our prototype device achieves 13 μm resolution over a wide field of view (4.8 mm × 4.4 mm). We demonstrate bright-field and fluorescence longitudinal imaging of living cells in a compact, low-cost configuration. PMID:23722754

  1. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    SciTech Connect

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  2. Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Yu, Hao; Schaekers, Marc; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron Voon-Yew; De Meyer, Kristin

    2016-04-01

    Applying simulations and experiments, this paper systematically compares contact resistivities (ρc) of metal-insulator-semiconductor (MIS) contacts and metal-semiconductor (MS) contacts with various semiconductor doping concentrations (Nd). Compared with the MS contacts, the MIS contacts with the low Schottky barrier height are more beneficial for ρc on semiconductors with low Nd, but this benefit diminishes gradually when Nd increases. With high Nd, we find that even an "ideal" MIS contact with optimized parameters cannot outperform the MS contact. As a result, the MIS contacts mainly apply to devices that use relatively low doped semiconductors, while we need to focus on the MS contacts to meet the sub-1 × 10-8 Ω cm2 ρc requirement for future Complementary Metal-Oxide-Semiconductor (CMOS) technology.

  3. Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal-ferroelectric-metal-insulator-semiconductor FET and its dynamic behaviour based on Landau theory

    NASA Astrophysics Data System (ADS)

    Li, Yang; Lian, Yong; Samudra, Ganesh S.

    2015-04-01

    Due to internal voltage amplification induced by the negative capacitance of ferroelectrics, the metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FET has been widely investigated to explore its potential application in low power devices. Based on Landau theory and stability criterion, a simulation program is implemented and MFMIS structure is quantitatively analyzed. The results show that it can be appropriately designed for both integrated circuits and memory devices by tuning capacitances contributed by MOSFET dielectric stack and ferroelectrics. Our simulation results on electrical characteristics of ferroelectric devices agree well with both quasi-static and dynamic experimental observations. The influence of the ferroelectric/dielectric layer thickness and area as well as temperature on hysteretic polarization-electric field characteristic of a ferroelectric are successfully explained. For a C-V loop sweeping over the gate voltage in MFMIS, possible asymmetry in the accessible negative capacitance region is also interpreted. Moreover, experimentally observed reduction in the equivalent capacitance of the ferroelectric-dielectric bilayer at high frequency is confirmed by Landau-Khalatnikov theory based simulation. Our work provides a more complete and explicit analytical treatment to understand the effect of negative capacitance of a ferroelectric on device performance.

  4. Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-02-01

    Peculiarities in determining the dopant concentration and dopant distribution profile in the near-surface layer of a semiconductor are investigated by measuring the admittance of metal-insulator-semiconductor structures (MIS structures) based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy. The dopant concentrations in the near-surface layer of the semiconductor are determined by measuring the admittance of MIS structures in the frequency range of 50 kHz to 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded gap layer demonstrate a high-frequency behavior with respect to the recharge time of surface states located near the Fermi level for an intrinsic semiconductor. The formation time of the inversion layer is decreased by less than two times, if a near-surface graded-gap layer is created. The dopant distribution profile in the near-surface layer of the semiconductor is found, and it is shown that for structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has a minimum near the interface with the insulator. For MIS structure based on n-Hg0.78Cd0.22Te, the dopant concentration is more uniformly distributed in the near-surface layer of the semiconductor.

  5. Flexible germanium nanomembrane metal-semiconductor-metal photodiodes

    NASA Astrophysics Data System (ADS)

    Kim, Munho; Seo, Jung-Hun; Yu, Zongfu; Zhou, Weidong; Ma, Zhenqiang

    2016-08-01

    We demonstrate flexible Ge nanomembrane (Ge NM) based metal-semiconductor-metal photodiodes. The effect of uniaxial tensile strain on Ge NM based photodiodes was investigated using bending fixtures. Dark current density is decreased from 21.5 to 4.8 mA/cm2 at 3 V by a tensile strain of 0.42% while photon responsivity is increased from 0.2 to 0.45 A/W at the wavelength of 1.5 μm. Enhanced responsivity is also observed at longer wavelengths up to 1.64 μm. The uniaxial tensile strain effectively reduces the direct bandgap energy of the Ge NM, leading to a shift of the absorption edge toward a longer wavelength.

  6. Circular electrode geometry metal-semiconductor-metal photodetectors

    NASA Technical Reports Server (NTRS)

    Mcaddo, James A. (Inventor); Towe, Elias (Inventor); Bishop, William L. (Inventor); Wang, Liang-Guo (Inventor)

    1994-01-01

    The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

  7. Circular electrode geometry metal-semiconductor-metal photodetectors

    NASA Technical Reports Server (NTRS)

    Mcadoo, James A. (Inventor); Towe, Elias (Inventor); Bishop, William L. (Inventor); Wang, Liang-Guo (Inventor)

    1995-01-01

    The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

  8. Hybrid Semiconductor-Metal Nanorods as Photocatalysts.

    PubMed

    Ben-Shahar, Yuval; Banin, Uri

    2016-08-01

    Semiconductor-metal hybrid nanoparticles manifest combined and often synergistic properties exceeding the functionality of the individual components, thereby opening up interesting opportunities for controlling their properties through the direct manipulation of their unique semiconductor-metal interface. Upon light absorption, these structures exhibit spatial charge separation across the semiconductor-metal junction. A significant and challenging application involves the use of these nanoparticles as photocatalysts. Through this process, the charge carriers transferred to the metal co-catalyst are available as reduction or oxidation reagents to drive the surface chemical reactions. In this review, we discuss synthesis approaches that offer a high degree of control over the hybrid nanoparticle structure and composition, the number of catalytic sites and the interfacial characteristics, including examples of a variety of photocatalyst architectures. We describe the structural and surface effects with regard to the functionality of hybrid nanosystems in photocatalysis, along with the effects of solution and chemical conditions on photocatalytic activity and efficiency. We conclude with a perspective on the rational design of advanced semiconductor-metal hybrid nanoparticles towards their functionality as highly efficient photocatalysts. PMID:27573406

  9. Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.

    PubMed

    Frenzel, Heiko; Lajn, Alexander; von Wenckstern, Holger; Lorenz, Michael; Schein, Friedrich; Zhang, Zhipeng; Grundmann, Marius

    2010-12-14

    Metal-semiconductor field-effect transistors (MESFETs) are widely known from opaque high-speed GaAs or high-power SiC and GaN technology. For the emerging field of transparent electronics, only metal-insulator-semiconductor field-effect transistors (MISFETs) were considered so far. This article reviews the progress of high-performance MESFETs in oxide electronics and reflects the recent advances of this technique towards transparent MESFET circuitry. We discuss design prospects as well as limitations regarding device performance, reliability and stability. The presented ZnO-based MESFETs and inverters have superior properties compared to MISFETs, i.e., high channel mobilities and on/off-ratios, high gain, and low uncertainty level at comparatively low operating voltages. This makes them a promising approach for future low-cost transparent electronics. PMID:20878625

  10. Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

    SciTech Connect

    Hahn, Herwig Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

    2015-06-07

    In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10{sup 13 }cm{sup –2} allowing to considerably shift the threshold voltage to more positive values.

  11. Highly tunable-emittance radiator based on semiconductor-metal transition of VO2 thin films

    NASA Astrophysics Data System (ADS)

    Hendaoui, Ali; Émond, Nicolas; Chaker, Mohamed; Haddad, Émile

    2013-02-01

    This paper describes a VO2-based smart structure with an emittance that increases with the temperature. A large tunability of the spectral emittance, which can be as high as 0.90, was achieved. The transition of the total emittance with the temperature was fully reversible according to a hysteresis cycle, with a transition temperature of 66.5 °C. The total emittance of the device was found to be 0.22 and 0.71 at 25 °C and 100 °C, respectively. This emittance performance and the structure simplicity are promising for the next generation of energy-efficient cost-effective passive thermal control systems of spacecrafts.

  12. Theoretical study of the noble metals on semiconductor surfaces and Ti-base shape memory alloys

    SciTech Connect

    Ding, Yungui

    1994-07-27

    The electronic and structural properties of the ({radical}3 {times} {radical}3) R30{degrees} Ag/Si(111) and ({radical}3 {times} {radical}3) R30{degrees} Au/Si(111) surfaces are investigated using first principles total energy calculations. We have tested almost all experimentally proposed structural models for both surfaces and found the energetically most favorable model for each of them. The lowest energy model structure of the ({radical}3 {times} {radical}3) R30{degrees} Ag/Si(111) surface consists of a top layer of Ag atoms arranged as ``honeycomb-chained-trimers`` lying above a distorted ``missing top layer`` Si(111) substrate. The coverage of Ag is 1 monolayer (ML). We find that the honeycomb structure observed in STM images arise from the electronic charge densities of an empty surface band near the Fermi level. The electronic density of states of this model gives a ``pseudo-gap`` around the Fermi level, which is consistent with experimental results. The lowest energy model for the ({radical}3 {times} {radical}3) R30{degrees} Au/Si(111) surface is a conjugate honeycomb-chained-trimer (CHCT-1) configuration which consists of a top layer of trimers formed by 1 ML Au atoms lying above a ``missing top layer`` Si(111) substrate with a honeycomb-chained-trimer structure for its first layer. The structures of Au and Ag are in fact quite similar and belong to the same class of structural models. However, small variation in the structural details gives rise to quite different observed STM images, as revealed in the theoretical calculations. The electronic charge density from bands around the Fermi level for the ({radical}3 {times} {radical}3) R30{degrees}, Au/Si(111) surface also gives a good description of the images observed in STM experiments. First principles calculations are performed to study the electronic and structural properties of a series of Ti-base binary alloys TiFe, TiNi, TiPd, TiMo, and TiAu in the B2 structure.

  13. Multilevel metallization method for fabricating a metal oxide semiconductor device

    NASA Technical Reports Server (NTRS)

    Hollis, B. R., Jr.; Feltner, W. R.; Bouldin, D. L.; Routh, D. E. (Inventor)

    1978-01-01

    An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.

  14. Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

    NASA Astrophysics Data System (ADS)

    Ravikiran, L.; Radhakrishnan, K.; Dharmarasu, N.; Agrawal, M.; Wang, Zilong; Bruno, Annalisa; Soci, Cesare; Lihuang, Tng; Kian Siong, Ang

    2016-09-01

    GaN Schottky metal-semiconductor-metal (MSM) UV photodetectors were fabricated on a 600 nm thick GaN layer, grown on 100 mm Si (111) substrate using an ammonia-MBE growth technique. In this report, the effect of device dimensions, applied bias and input power on the linearity of the GaN Schottky-based MSM photodetectors on Si substrate were investigated. Devices with larger interdigitated spacing, ‘S’ of 9.0 μm between the fingers resulted in good linearity and flat responsivity characteristics as a function of input power with an external quantum efficiency (EQE) of ∼33% at an applied bias of 15 V and an input power of 0.8 W m‑2. With the decrease of ‘S’ to 3.0 μm, the EQE was found to increase to ∼97%. However, devices showed non linearity and drop in responsivity from flatness at higher input power. Moreover, the position of dropping from flatter responsivity was found to shift to lower powers with increased bias. The drop in the responsivity was attributed to the modulation of conductance in the MSM due to the trapping of electrons at the dislocations, resulting in the formation of depletion regions around them. In devices with lower ‘S’, both the image force reduction and the enhanced collection efficiency increased the photocurrent as well as the charging of the dislocations. This resulted in the increased depletion regions around the dislocations leading to the modulation of conductance and non-linearity.

  15. CMOS array design automation techniques. [metal oxide semiconductors

    NASA Technical Reports Server (NTRS)

    Ramondetta, P.; Feller, A.; Noto, R.; Lombardi, T.

    1975-01-01

    A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using the standard cell approach was developed, implemented, tested and validated. Basic cell design topology and guidelines are defined based on an extensive analysis that includes circuit, layout, process, array topology and required performance considerations particularly high circuit speed.

  16. Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts

    SciTech Connect

    Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

    2009-06-07

    We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

  17. SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

    PubMed

    Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

    2011-08-01

    In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved. PMID:21808317

  18. Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

    PubMed

    Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

    2015-07-16

    We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift. PMID:26073812

  19. Complementary Metal Oxide Semiconductor Based Multimodal Sensor for In vivo Brain Function Imaging with a Function for Simultaneous Cell Stimulation

    NASA Astrophysics Data System (ADS)

    Tagawa, Ayato; Mitani, Masahiro; Minami, Hiroki; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2010-04-01

    We have developed a multimodal complementary metal oxide semiconductor (CMOS) sensor device embedded with Au electrodes for fluorescent imaging and cell stimulation in the deep brain of mice. The Au electrodes were placed on the pixel array of the image sensor. Windows over the photodiodes were opened in the electrode area for simultaneous fluorescent imaging and cell stimulation in the same area of the brain tissue. The sensor chip was shaped like a shank and was packaged by two packaging methods for high strength or minimal invasion. The experimental results showed that the 90 ×90 µm2 Au electrodes with windows were capable of injecting theta burst stimulation (TBS)-like current pulses at 0.2-1 mA in a saline solution. We successfully demonstrated that fluorescent imaging and TBS-like current injection can be simultaneously performed in the electrode area of a brain phantom.

  20. Complementary Metal Oxide Semiconductor Based Multimodal Sensor for In vivo Brain Function Imaging with a Function for Simultaneous Cell Stimulation

    NASA Astrophysics Data System (ADS)

    Ayato Tagawa,; Masahiro Mitani,; Hiroki Minami,; Toshihiko Noda,; Kiyotaka Sasagawa,; Takashi Tokuda,; Jun Ohta,

    2010-04-01

    We have developed a multimodal complementary metal oxide semiconductor (CMOS) sensor device embedded with Au electrodes for fluorescent imaging and cell stimulation in the deep brain of mice. The Au electrodes were placed on the pixel array of the image sensor. Windows over the photodiodes were opened in the electrode area for simultaneous fluorescent imaging and cell stimulation in the same area of the brain tissue. The sensor chip was shaped like a shank and was packaged by two packaging methods for high strength or minimal invasion. The experimental results showed that the 90 × 90 μm2 Au electrodes with windows were capable of injecting theta burst stimulation (TBS)-like current pulses at 0.2-1 mA in a saline solution. We successfully demonstrated that fluorescent imaging and TBS-like current injection can be simultaneously performed in the electrode area of a brain phantom.

  1. Ultra low-loss, isotropic optical negative-index metamaterial based on hybrid metal-semiconductor nanowires

    PubMed Central

    Paniagua-Domínguez, R.; Abujetas, D. R.; Sánchez-Gil, J. A.

    2013-01-01

    Recently, many fascinating properties predicted for metamaterials (negative refraction, superlensing, electromagnetic cloaking,…) were experimentally demonstrated. Unfortunately, the best achievements have no direct translation to the optical domain, without being burdened by technological and conceptual difficulties. Of particular importance within the realm of optical negative-index metamaterials (NIM), is the issue of simultaneously achieving strong electric and magnetic responses and low associated losses. Here, hybrid metal-semiconductor nanowires are proposed as building blocks of optical NIMs. The metamaterial thus obtained, highly isotropic in the plane normal to the nanowires, presents a negative index of refraction in the near-infrared, with values of the real part well below −1, and extremely low losses (an order of magnitude better than present optical NIMs). Tunability of the system allows to select the operating range in the whole telecom spectrum. The design is proven in configurations such as prisms and slabs, directly observing negative refraction. PMID:23514968

  2. Fermi level dependent native defect formation: Consequences for metal--semiconductor and semiconductor--semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-07-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration.

  3. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs.

  4. Monolayer MXenes: promising half-metals and spin gapless semiconductors

    NASA Astrophysics Data System (ADS)

    Gao, Guoying; Ding, Guangqian; Li, Jie; Yao, Kailun; Wu, Menghao; Qian, Meichun

    2016-04-01

    Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate using first-principles calculations that monolayers Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00μB per formula unit, respectively, while monolayer V2C is a metal with unstable antiferromagnetism, and monolayer V2N is a nonmagnetic metal. Interestingly, under a biaxial strain, there is a phase transition from a nearly half-metal to truly half-metal, spin gapless semiconductor, and metal for monolayer Ti2C. Monolayer Ti2N is still a nearly half-metal under a suitable biaxial strain. Large magnetic moments can be induced by the biaxial tensile and compressive strains for monolayer V2C and V2N, respectively. We also show that the structures of these four monolayer MXenes are stable according to the calculated formation energy and phonon spectrum. Our investigations suggest that, unlike monolayer graphene, monolayer MXenes Ti2C and Ti2N without vacancy, doping or external electric field exhibit intrinsic magnetism, especially the half-metallic ferromagnetism and spin gapless semiconductivity, which will stimulate further studies on possible spintronic applications for new two-dimensional materials of MXenes.

  5. Monolayer MXenes: promising half-metals and spin gapless semiconductors.

    PubMed

    Gao, Guoying; Ding, Guangqian; Li, Jie; Yao, Kailun; Wu, Menghao; Qian, Meichun

    2016-04-28

    Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate using first-principles calculations that monolayers Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00μB per formula unit, respectively, while monolayer V2C is a metal with unstable antiferromagnetism, and monolayer V2N is a nonmagnetic metal. Interestingly, under a biaxial strain, there is a phase transition from a nearly half-metal to truly half-metal, spin gapless semiconductor, and metal for monolayer Ti2C. Monolayer Ti2N is still a nearly half-metal under a suitable biaxial strain. Large magnetic moments can be induced by the biaxial tensile and compressive strains for monolayer V2C and V2N, respectively. We also show that the structures of these four monolayer MXenes are stable according to the calculated formation energy and phonon spectrum. Our investigations suggest that, unlike monolayer graphene, monolayer MXenes Ti2C and Ti2N without vacancy, doping or external electric field exhibit intrinsic magnetism, especially the half-metallic ferromagnetism and spin gapless semiconductivity, which will stimulate further studies on possible spintronic applications for new two-dimensional materials of MXenes. PMID:27074402

  6. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  7. A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

    PubMed Central

    Konduru, Tharun; Rains, Glen C.; Li, Changying

    2015-01-01

    A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage. PMID:25587975

  8. A customized metal oxide semiconductor-based gas sensor array for onion quality evaluation: system development and characterization.

    PubMed

    Konduru, Tharun; Rains, Glen C; Li, Changying

    2015-01-01

    A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage. PMID:25587975

  9. Method of physical vapor deposition of metal oxides on semiconductors

    DOEpatents

    Norton, David P.

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  10. Monte Carlo calculations for metal-semiconductor hot-electron injection via tunnel-junction emission

    NASA Astrophysics Data System (ADS)

    Appelbaum, Ian; Narayanamurti, V.

    2005-01-01

    We present a detailed description of a scheme to calculate the injection current for metal-semiconductor systems using tunnel-junction electron emission. We employ a Monte Carlo framework for integrating over initial free-electron states in a metallic emitter and use interfacial scattering at the metal-semiconductor interface as an independent parameter. These results have implications for modeling metal-base transistors and ballistic electron emission microscopy and spectroscopy.

  11. New Concentric Electrode Metal-Semiconductor-Metal Photodetectors

    NASA Technical Reports Server (NTRS)

    Towe, Elias

    1996-01-01

    A new metal-semiconductor-metal (MSM) photodetector geometry is proposed. The new device has concentric metal electrodes which exhibit a high degree of symmetry and a design flexibility absent in the conventional MSM device. The concentric electrodes are biased to alternating potentials as in the conventional interdigitated device. Because of the high symmetry configuration, however, the new device also has a lower effective capacitance. This device and the conventional MSM structure are analyzed within a common theoretical framework which allows for the comparison of the important performance characteristics.

  12. Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

    NASA Astrophysics Data System (ADS)

    Minoura, Yuya; Kasuya, Atsushi; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2013-07-01

    High-quality Ge-based metal-oxide-semiconductor (MOS) stacks were achieved with ultrathin oxynitride (GeON) gate dielectrics. An in situ process based on plasma nitridation of the base germanium oxide (GeO2) surface and subsequent metal electrode deposition was proven to be effective for suppressing electrical deterioration induced by the reaction at the metal/insulator interface. The electrical properties of the bottom GeON/Ge interface were further improved by both low-temperature oxidation for base GeO2 formation and high-temperature in situ vacuum annealing after plasma nitridation of the base oxide. Based on the optimized in situ gate stack fabrication process, very high inversion carrier mobility (μhole: 445 cm2/Vs, μelectron: 1114 cm2/Vs) was demonstrated for p- and n-channel Ge MOSFETs with Al/GeON/Ge gate stacks at scaled equivalent oxide thickness down to 1.4 nm.

  13. Nanoscale Metal Oxide Semiconductors for Gas Sensing

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Evans, Laura; Xu, Jennifer C.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.

    2011-01-01

    A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical

  14. High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror

    NASA Astrophysics Data System (ADS)

    Rantamäki, A.; Saarinen, E. J.; Lyytikäinen, J.; Lahtonen, K.; Valden, M.; Okhotnikov, O. G.

    2014-03-01

    We present optically pumped semiconductor disk lasers with a thin dielectric layer placed between the semiconductor distributed Bragg reflector and the metallization interface. The approach is shown to enhance the reflectivity of the semiconductor mirror while introducing a negligible penalty to the thermal resistance of the device. The design has potential for improving the performance of semiconductor disk lasers by avoiding highly pump-absorbing metal layers and allowing thinner mirror structures. The advantages are expected to be especially prominent for material systems that employ thick thermally insulating semiconductor mirrors.

  15. Metal oxide semiconductor thin-film transistors for flexible electronics

    NASA Astrophysics Data System (ADS)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  16. Lattice matched semiconductor growth on crystalline metallic substrates

    DOEpatents

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2013-11-05

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

  17. Development of new generation of perovskite based noble metal/semiconductor photocatalysts for visible-light-driven hydrogen production

    NASA Astrophysics Data System (ADS)

    Shen, Peichuan

    In recent decades, semiconductor photocatalysis has attracted a growing attention as a possible alternative to existing methods of hydrogen production, hydrocarbon conversion and organic compound oxidation. Many types of photocatalysts have been developed and tested for photocatalytic applications. However, most of them do not have notable activity in visible light region, which limits their practical applications. Development of photocatalysts, which can be activated by visible light provides a promising way forward to utilize both UV and visible portions of solar spectrum. In this thesis, two main methods to advance visible light driven photocatalysis, such as bandgap modification through doping and co-catalyst development, are investigated. The photocatalysts studied in this thesis included CdS and SrTiO3, which were extensively investigated and characterized. Rhodium doped strontium titanate was synthesized through different preparation methods. The synthesized samples have been investigated by various characterization techniques including XRD, TEM, STEM, XPS and UV-Vis spectroscopy. The effect of preparation conditions, such as doping concentration, calcination temperature and pH have been investigated and optimized. In addition, the photocatalytic activities for hydrogen production of the samples synthesized by different preparation methods were also studied. Among the preparation methods, polymerizable complex (PC) method was found to be the most effective synthesis method for SrTiO3: Rh. The samples prepared by PC method had higher photocatalytic activity as compared to that of samples synthesized by solid state reaction method and hydrothermal method. The reasons might be attributed to more effective doping and higher surface area. The results of this work suggest that PC method can also be applied to develop other perovskite materials for photocatalytic applications. Co-catalyst development for enhancement of photocatalytic hydrogen production is also

  18. Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers.

    PubMed

    Wang, X; Zhang, G Z; Xu, Y; Gan, X W; Chen, C; Wang, Z; Wang, Y; Wang, J L; Wang, T; Wu, H; Liu, C

    2016-12-01

    InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10(-9) A/cm(2) at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors. PMID:26759357

  19. Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers

    NASA Astrophysics Data System (ADS)

    Wang, X.; Zhang, G. Z.; Xu, Y.; Gan, X. W.; Chen, C.; Wang, Z.; Wang, Y.; Wang, J. L.; Wang, T.; Wu, H.; Liu, C.

    2016-01-01

    InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10-9 A/cm2 at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.

  20. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    SciTech Connect

    Islam, Sk Masiul Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  1. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    NASA Astrophysics Data System (ADS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-06-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO2 and ZrO2, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×1011 cm-2, respectively. The device with a structure Metal/ZrO2/InAs QDs/HfO2/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10-6 A/cm2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO2 deposition.

  2. Growth and characterization of rutile TiO2 nanorods on various substrates with fabricated fast-response metal-semiconductor-metal UV detector based on Si substrate

    NASA Astrophysics Data System (ADS)

    Selman, Abbas M.; Hassan, Z.

    2015-07-01

    Rutile-phase titanium dioxide nanorods (NRs) were synthesized successfully on p-type silicon (Si) (1 1 1), c-plane sapphire (Al2O3), glass coated with fluorine-doped tin oxide (FTO), glass, and quartz substrates via chemical bath deposition method. All substrates were seeded with a TiO2 seed layer synthesized with a radio frequency reactive magnetron sputtering system prior to NRs growth. The effect of substrate type on structural, morphological, and optical properties of rutile TiO2 NRs was studied. X-ray diffraction, Raman spectroscopy, and field-emission scanning electron microscopy analyses showed the tetragonal rutile structure of the synthesized TiO2 NRs. Optical properties were examined with photoluminescence (PL) spectroscopy of the grown rutile NRs on all substrates, with the spectra exhibiting one strong ultraviolet emission peak intensity compared with broad visible peak. The optimal sample of rutile NRs was grown on Si substrate. Thus, a fast-response metal-semiconductor-metal ultraviolet (UV) detector was fabricated. Upon exposure to 365 nm light (2.3 mW/cm2) at 5 V bias, the device displays 2.62 × 10-5 A photocurrent, and the response and recovery times are calculated as 18.5 and 19.1 ms, respectively. These results demonstrate that the fabricated high-quality photodiode is a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  3. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values. PMID:27172429

  4. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

    NASA Astrophysics Data System (ADS)

    Lu, Anh Khoa Augustin; Pourtois, Geoffrey; Agarwal, Tarun; Afzalian, Aryan; Radu, Iuliana P.; Houssa, Michel

    2016-01-01

    The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs.

  5. Gate voltage dependent 1/f noise variance model based on physical noise generation mechanisms in n-channel metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Arai, Yukiko; Aoki, Hitoshi; Abe, Fumitaka; Todoroki, Shunichiro; Khatami, Ramin; Kazumi, Masaki; Totsuka, Takuya; Wang, Taifeng; Kobayashi, Haruo

    2015-04-01

    1/f noise is one of the most important characteristics for designing analog/RF circuits including operational amplifiers and oscillators. We have analyzed and developed a novel 1/f noise model in the strong inversion, saturation, and sub-threshold regions based on SPICE2 type model used in any public metal-oxide-semiconductor field-effect transistor (MOSFET) models developed by the University of California, Berkeley. Our model contains two noise generation mechanisms that are mobility and interface trap number fluctuations. Noise variability dependent on gate voltage is also newly implemented in our model. The proposed model has been implemented in BSIM4 model of a SPICE3 compatible circuit simulator. Parameters of the proposed model are extracted with 1/f noise measurements for simulation verifications. The simulation results show excellent agreements between measurement and simulations.

  6. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. PMID:26094059

  7. Vibronic states in organic semiconductors based on non-metal naphthalocyanine. Detection of heterocyclic phthalocyanine compounds in a flexible dielectric matrix

    SciTech Connect

    Belogorokhov, I. A.; Tikhonov, E. V.; Dronov, M. A.; Belogorokhova, L. I.; Ryabchikov, Yu. V.; Tomilova, L. G.; Khokhlov, D. R.

    2012-01-15

    The vibronic properties of semiconductor structures based on non-metal naphthalocyanine molecules are studied using IR and Raman spectroscopy methods. New absorption lines in the transmission spectra of such materials are detected and identified. Three transmission lines are observed in the range 2830-3028 cm{sup -1}, which characterize carbon-hydrogen bonds of peripheral molecular groups. Their spectral positions are 2959, 2906, and 2866 cm{sup -1}. It is detected that the phthalocyanine ring can also exhibit its specific vibronic properties in the Raman spectra at 767, 717, and 679 cm{sup -1}. The naphthalocyanine molecule in the organic dielectric matrix of microfibers is described using IR spectroscopy. It is shown that the set of vibrations characterizing the isoindol group, pyrrole ring, naphtha group, and C-H bonds, allows an accurate enough description of the vibronic states of the naphthalocyanine complex in complex heterostructures to be made. The spectral range with fundamental modes, characterizing a naphthalocyanine semiconductor in a heterostructure, is 600-1600 cm{sup -1}. A comparison of the compositions of complex systems with a similar heterostructure containing lutetium diphthalocyanine demonstrated few errors.

  8. (Plasmonic Metal Core)/(Semiconductor Shell) Nanostructures

    NASA Astrophysics Data System (ADS)

    Fang, Caihong

    Over the past several years, integration of metal nanocrystals that can support localized surface plasmon has been demonstrated as one of the most promising methods to the improvement of the light-harvesting efficiency of semiconductors. Ag and Au nanocrystals have been extensively hybridized with semiconductors by either deposition or anchoring. However, metal nanocrystals tend to aggregate, reshape, detach, or grow into large nanocrystals, leading to a loss of the unique properties seen in the original nanocrystals. Fortunately, core/shell nanostructures, circumventing the aforementioned problems, have been demonstrated to exhibit superior photoactivities. To further improve the light-harvesting applications of (plasmonic metal core)/(semiconductor shell) nanostructures, it is vital to understand the plasmonic and structural evolutions during the preparation processes, design novel hybrid nanostructures, and improve their light-harvesting performances. In this thesis, I therefore studied the plasmonic and structural evolutions during the formation of (Ag core)/(Ag2S shell) nanostructures. Moreover, I also prepared (noble metal core)/(TiO2 shell) nanostructures and investigated their plasmonic properties and photon-harvesting applications. Clear understanding of the sulfidation process can enable fine control of the plasmonic properties as well as the structural composition of Ag/Ag 2S nanomaterials. Therefore, I investigated the plasmonic and structural variations during the sulfidation process of Ag nanocubes both experimentally and numerically. The sulfidation reactions were carried out at both the ensemble and single-particle levels. Electrodynamic simulations were also employed to study the variations of the plasmonic properties and plasmon modes. Both experiment and simulation results revealed that sulfidation initiates at the vertices of Ag nanocubes. Ag nanocubes are then gradually truncated and each nanocube becomes a nanosphere eventually. The cubic

  9. Transient absorption microscopy studies of single metal and semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Johns, Paul; Sajini-Devadas, Mary; Hartland, Gregory V.

    2015-08-01

    Transient absorption microscopy is an experimental technique that allows nanomaterials to be studied with ultrafast time resolution and diffraction limited spatial resolution. This paper describes recent results from using transient absorption microscopy to investigate energy relaxation processes in single metal and semiconductor nanowires. The processes that have been examined include charge carrier trapping in semiconductor nanostructures, the motion of surface plasmon polaritons in metal nanowires, and the damping of the acoustic breathing modes of metal nanowires by high viscosity solvents.

  10. Metal-oxide-semiconductor photocapacitor for sensing surface plasmon polaritons

    NASA Astrophysics Data System (ADS)

    Khalilzade-Rezaie, Farnood; Peale, Robert E.; Panjwani, Deep; Smith, Christian W.; Nath, Janardan; Lodge, Michael; Ishigami, Masa; Nader, Nima; Vangala, Shiva; Yannuzzi, Mark; Cleary, Justin W.

    2015-09-01

    An electronic detector of surface plasmon polaritons (SPP) is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-semiconductor capacitor. Semitransparent metal and graphene gates function similarly. We report the dependence of the photoresponse on substrate carrier type, carrier concentration, and back-contact biasing.

  11. Thermoelectric Performance Enhancement by Surrounding Crystalline Semiconductors with Metallic Nanoparticles

    NASA Technical Reports Server (NTRS)

    Kim, Hyun-Jung; King, Glen C.; Park, Yeonjoon; Lee, Kunik; Choi, Sang H.

    2011-01-01

    Direct conversion of thermal energy to electricity by thermoelectric (TE) devices may play a key role in future energy production and utilization. However, relatively poor performance of current TE materials has slowed development of new energy conversion applications. Recent reports have shown that the dimensionless Figure of Merit, ZT, for TE devices can be increased beyond the state-of-the-art level by nanoscale structuring of materials to reduce their thermal conductivity. New morphologically designed TE materials have been fabricated at the NASA Langley Research Center, and their characterization is underway. These newly designed materials are based on semiconductor crystal grains whose surfaces are surrounded by metallic nanoparticles. The nanoscale particles are used to tailor the thermal and electrical conduction properties for TE applications by altering the phonon and electron transport pathways. A sample of bismuth telluride decorated with metallic nanoparticles showed less thermal conductivity and twice the electrical conductivity at room temperature as compared to pure Bi2Te3. Apparently, electrons cross easily between semiconductor crystal grains via the intervening metallic nanoparticle bridges, but phonons are scattered at the interfacing gaps. Hence, if the interfacing gap is larger than the mean free path of the phonon, thermal energy transmission from one grain to others is reduced. Here we describe the design and analysis of these new materials that offer substantial improvements in thermoelectric performance.

  12. Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

    PubMed Central

    Yu, Chongqi; Wang, Hui

    2010-01-01

    The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures. PMID:22163463

  13. Fabrication of porous materials (metal, metal oxide and semiconductor) through an aerosol-assisted route

    NASA Astrophysics Data System (ADS)

    Sohn, Hiesang

    Porous materials have gained attraction owing to their vast applications in catalysts, sensors, energy storage devices, bio-devices and other areas. To date, various porous materials were synthesized through soft and hard templating approaches. However, a general synthesis method for porous non-oxide materials, metal alloys and semiconductors with tunable structure, composition and morphology has not been developed yet. To address this challenge, this thesis presents an aerosol method towards the synthesis of such materials and their applications for catalysis, hydrogen storage, Li-batteries and photo-catalysis. The first part of this thesis presents the synthesis of porous metals, metal oxides, and semiconductors with controlled pore structure, crystalline structure and morphology. In these synthesis processes, metal salts and organic ligands were employed as precursors to create porous metal-carbon frameworks. During the aerosol process, primary metal clusters and nanoparticles were formed, which were coagulated/ aggregated forming the porous particles. Various porous particles, such as those of metals (e.g., Ni, Pt, Co, Fe, and Ni xPt(1-x)), metal oxides (e.g., Fe3O4 and SnO2) and semiconductors (e.g., CdS, CuInS2, CuInS 2x-ZnS(1-x), and CuInS2x-TiO2(1-x)) were synthesized. The morphology, porous structure and crystalline structure of the particles were regulated through both templating and non-templating methods. The second part of this thesis explores the applications of these materials, including propylene hydrogenation and H2 uptake capacity of porous Ni, NiPt alloys and Ni-Pt composites, Li-storage of Fe3O4 and SnO2, photodegradation of CuInS2-based semiconductors. The effects of morphology, compositions, and porous structure on the device performance were systematically investigated. Overall, this dissertation work unveiled a simple synthesis approach for porous particles of metals, metal alloys, metal oxides, and semiconductors with controlled

  14. Growth of metal and semiconductor nanostructures using localized photocatalysts

    SciTech Connect

    Shelnutt, John A; Wang, Zhongchun; Medforth, Craig J

    2006-03-08

    Our overall goal has been to understand and develop a light-driven approach to the controlled growth of novel metal and semiconductor nanostructures and nanomaterials. In this photochemical process, bio-inspired porphyrin-based photocatalysts reduce metal salts in aqueous solutions at ambient temperatures when exposed to visible light, providing metal nucleation and growth centers. The photocatalyst molecules are pre-positioned at the nanoscale to control the location of the deposition of metal and therefore the morphology of the nanostructures that are grown. Self-assembly, chemical confinement, and molecular templating are some of the methods we are using for nanoscale positioning of the photocatalyst molecules. When exposed to light, each photocatalyst molecule repeatedly reduces metal ions from solution, leading to deposition near the photocatalyst and ultimately the synthesis of new metallic nanostructures and nanostructured materials. Studies of the photocatalytic growth process and the resulting nanostructures address a number of fundamental biological, chemical, and environmental issues and draw on the combined nanoscience characterization and multi-scale simulation capabilities of the new DOE Center for Integrated Nanotechnologies at Sandia National Laboratories and the University of Georgia. Our main goals are to elucidate the processes involved in the photocatalytic growth of metal nanomaterials and provide the scientific basis for controlled nanosynthesis. The nanomaterials resulting from these studies have applications in nanoelectronics, photonics, sensors, catalysis, and micromechanical systems. Our specific goals for the past three years have been to understand the role of photocatalysis in the synthesis of dendritic metal (Pt, Pd, Au) nanostructures grown from aqueous surfactant solutions under ambient conditions and the synthesis of photocatalytic porphyrin nanostructures (e.g., nanotubes) as templates for fabrication of photo-active metal

  15. Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices.

    PubMed

    Chen, Chao; Wang, Ti; Wu, Hao; Zheng, He; Wang, Jianbo; Xu, Yang; Liu, Chang

    2015-01-01

    Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is deposited on the m-plane ZnO thin films. It is interesting to observe the near-infrared random lasing from the metal-insulator-semiconductor devices. PMID:25852396

  16. Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Chen, Chao; Wang, Ti; Wu, Hao; Zheng, He; Wang, Jianbo; Xu, Yang; Liu, Chang

    2015-03-01

    Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is deposited on the m-plane ZnO thin films. It is interesting to observe the near-infrared random lasing from the metal-insulator-semiconductor devices.

  17. Nanowires and Nanobelts: Volume 1, Metal and Semiconductor Nanowires

    NASA Astrophysics Data System (ADS)

    Wang, Zhong Lin

    This two volume reference, Nanowires and Nanobelts: Materials, Properties and Devices, provides a comprehensive introduction to the field and reviews the current state of the research. Volume 1, Metal and Semiconductor Nanowires covers a wide range of materials systems, from noble metals (such as Au, Ag, Cu), single element semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs as well as heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC).

  18. Metal oxide semiconductor structure using oxygen-terminated diamond

    NASA Astrophysics Data System (ADS)

    Chicot, G.; Maréchal, A.; Motte, R.; Muret, P.; Gheeraert, E.; Pernot, J.

    2013-06-01

    Metal-oxide-semiconductor structures with aluminum oxide as insulator and p-type (100) mono-crystalline diamond as semiconductor have been fabricated and investigated by capacitance versus voltage and current versus voltage measurements. The aluminum oxide dielectric was deposited using low temperature atomic layer deposition on an oxygenated diamond surface. The capacitance voltage measurements demonstrate that accumulation, depletion, and deep depletion regimes can be controlled by the bias voltage, opening the route for diamond metal-oxide-semiconductor field effect transistor. A band diagram is proposed and discussed.

  19. The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

    NASA Technical Reports Server (NTRS)

    Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

    1979-01-01

    The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

  20. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    NASA Astrophysics Data System (ADS)

    Hoidn, Oliver R.; Seidler, Gerald T.

    2015-08-01

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2-6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ˜20% quantum efficiency at 2.6 keV with ˜190 eV resolution and a 100 kHz maximum detection rate. The detector platform's useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  1. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers.

    PubMed

    Hoidn, Oliver R; Seidler, Gerald T

    2015-08-01

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2-6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform's useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry. PMID:26329247

  2. Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

    PubMed

    Zhao, Yudan; Li, Qunqing; Xiao, Xiaoyang; Li, Guanhong; Jin, Yuanhao; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2016-02-23

    We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices. PMID:26768020

  3. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  4. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    SciTech Connect

    Hoidn, Oliver R.; Seidler, Gerald T.

    2015-08-15

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  5. Mn-based ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Dietl, Tomasz; Sawicki, Maciej

    2003-07-01

    The present status of research and prospects for device applications of ferromagnetic (diluted magnetic) semiconductors (DMS) is presented. We review the nature of the electronic states and the mechanisms of the carrier-mediated exchange interactions (mean-field Zener model) in p-type Mn-based III-V and II-VI compounds, highlighting a good correspondence of experimental findings and theoretical predictions. An account of the latest progress on the road of increasing the Currie point to above the room temperature is given for both families of compounds. We comment on a possibility of obtaining ferromagnetism in n-type materials, taking (Zn,Mn)O:Al as the example. Concerning technologically important issue of easy axis and domain engineering, we present theoretical predictions and experimental results on the temperature and carrier concentration driven change of magnetic anisotropy in (Ga,Mn)As.

  6. Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters

    SciTech Connect

    Lee, Kyu-Tae; Seo, Sungyong; Yong Lee, Jae; Jay Guo, L.

    2014-06-09

    We present transmission visible wavelength filters based on strong interference behaviors in an ultrathin semiconductor material between two metal layers. The proposed devices were fabricated on 2 cm × 2 cm glass substrate, and the transmission characteristics show good agreement with the design. Due to a significantly reduced light propagation phase change associated with the ultrathin semiconductor layer and the compensation in phase shift of light reflecting from the metal surface, the filters show an angle insensitive performance up to ±70°, thus, addressing one of the key challenges facing the previously reported photonic and plasmonic color filters. This principle, described in this paper, can have potential for diverse applications ranging from color display devices to the image sensors.

  7. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    NASA Technical Reports Server (NTRS)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2009-01-01

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  8. Integrated photo-responsive metal oxide semiconductor circuit

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban D. (Inventor); Dargo, David R. (Inventor); Lyons, John C. (Inventor)

    1987-01-01

    An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.

  9. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    DOEpatents

    Ren, Zhifeng; Chen, Gang; Poudel, Bed; Kumar, Shankar; Wang, Wenzhong; Dresselhaus, Mildred

    2009-09-08

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  10. GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Rao Gollu, Sankara; Sharma, Ramakant; Halder, Nripendra. N.; Biswas, Pranab; Banerji, P.; Gupta, D.

    2013-08-01

    Ultrathin InP passivated GaAs non-volatile memory devices were fabricated with chemically synthesized 5 nm ZnO quantum dots embedded into ZrO2 high-k oxide matrix deposited through metal organic chemical vapor deposition. In these memory devices, the memory window was found to be 6.10 V and the obtained charge loss was only 15.20% after 105 s. The superior retention characteristics and a wide memory window are achieved due to presence of ZnO quantum dots between tunneling and control oxide layers. Room temperature Coulomb blockade effect was found in these devices and it was ascertained to be the main reason for low leakage. Electronic band diagram with program and erase operations were described on the basis of electrical characterizations.

  11. High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability

    NASA Astrophysics Data System (ADS)

    He, Yandong; Zhang, Ganggang; Zhang, Xing

    2014-01-01

    With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular for its better tradeoff between breakdown voltage and performance, especially for smart power applications. A multi-region direct current current-voltage (MR-DCIV) technique with spectroscopic features was demonstrated to map the interface state generation in the channel, accumulation and STI drift regions. High temperature behavior of MR-DCIV spectroscopy was analyzed and a physical model was verified. Degradation of STI-based LDMOS transistors under high temperature reverse bias (HTRB) stress is experimentally studied by MR-DCIV spectroscopy. The impact of interface state location on device electrical characteristics was investigated. Our results show that the major contribution to HTRB degradation, in term of the on-resistance degradation, was attributed to interface state generation under STI drift region.

  12. Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

    SciTech Connect

    Kanaki, Toshiki Asahara, Hirokatsu; Ohya, Shinobu Tanaka, Masaaki

    2015-12-14

    We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

  13. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

    SciTech Connect

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-15

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.

  14. Self-aligned metallization on organic semiconductor through 3D dual-layer thermal nanoimprint

    NASA Astrophysics Data System (ADS)

    Jung, Y.; Cheng, X.

    2014-09-01

    High-resolution patterning of metal structures on organic semiconductors is important to the realization of high-performance organic transistors for organic integrated circuit applications. The traditional shadow mask technique has a limited resolution, precluding sub-micron metal structures on organic semiconductors. Thus organic transistors cannot benefit from scaling into the deep sub-micron region to improve their dc and ac performances. In this work, we report an efficient multiple-level metallization on poly (3-hexylthiophene) (P3HT) with a deep sub-micron lateral gap. By using a 3D nanoimprint mold in a dual-layer thermal nanoimprint process, we achieved self-aligned two-level metallization on P3HT. The 3D dual-layer thermal nanoimprint enables the first metal patterns to have suspending side-wings that can clearly define a distance from the second metal patterns. Isotropic and anisotropic side-wing structures can be fabricated through two different schemes. The process based on isotropic side-wings achieves a lateral-gap in the order of 100 nm (scheme 1). A gap of 60 nm can be achieved from the process with anisotropic side-wings (scheme 2). Because of the capability of nanoscale metal patterning on organic semiconductors with high overlay accuracy, this self-aligned metallization technique can be utilized to fabricate high-performance organic metal semiconductor field-effect transistor.

  15. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

    DOE PAGESBeta

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-06-08

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters ( including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring themore » underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. Lastly, this study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogenvacancy centres that use these freestanding hybrid nanostructures as building blocks.« less

  16. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots.

    PubMed

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-01-01

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters (including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. This study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanostructures as building blocks. PMID:27273426

  17. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

    PubMed Central

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-01-01

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters (including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. This study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanostructures as building blocks. PMID:27273426

  18. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-06-01

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters (including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. This study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanostructures as building blocks.

  19. Ferromagnetic Resonance Spin Pumping and Electrical Spin Injection in Silicon-Based Metal-Oxide-Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Pu, Y.; Odenthal, P. M.; Adur, R.; Beardsley, J.; Swartz, A. G.; Pelekhov, D. V.; Flatté, M. E.; Kawakami, R. K.; Pelz, J.; Hammel, P. C.; Johnston-Halperin, E.

    2015-12-01

    We present the measurement of ferromagnetic resonance (FMR-)driven spin pumping and three-terminal electrical spin injection within the same silicon-based device. Both effects manifest in a dc spin accumulation voltage Vs that is suppressed as an applied field is rotated to the out-of-plane direction, i.e., the oblique Hanle geometry. Comparison of Vs between these two spin injection mechanisms reveals an anomalously strong suppression of FMR-driven spin pumping with increasing out-of-plane field Happz . We propose that the presence of the large ac component to the spin current generated by the spin pumping approach, expected to exceed the dc value by 2 orders of magnitude, is the origin of this discrepancy through its influence on the spin dynamics at the oxide-silicon interface. This convolution, wherein the dynamics of both the injector and the interface play a significant role in the spin accumulation, represents a new regime for spin injection that is not well described by existing models of either FMR-driven spin pumping or electrical spin injection.

  20. Ferromagnetic Resonance Spin Pumping and Electrical Spin Injection in Silicon-Based Metal-Oxide-Semiconductor Heterostructures.

    PubMed

    Pu, Y; Odenthal, P M; Adur, R; Beardsley, J; Swartz, A G; Pelekhov, D V; Flatté, M E; Kawakami, R K; Pelz, J; Hammel, P C; Johnston-Halperin, E

    2015-12-11

    We present the measurement of ferromagnetic resonance (FMR-)driven spin pumping and three-terminal electrical spin injection within the same silicon-based device. Both effects manifest in a dc spin accumulation voltage V_{s} that is suppressed as an applied field is rotated to the out-of-plane direction, i.e., the oblique Hanle geometry. Comparison of V_{s} between these two spin injection mechanisms reveals an anomalously strong suppression of FMR-driven spin pumping with increasing out-of-plane field H_{app}^{z}. We propose that the presence of the large ac component to the spin current generated by the spin pumping approach, expected to exceed the dc value by 2 orders of magnitude, is the origin of this discrepancy through its influence on the spin dynamics at the oxide-silicon interface. This convolution, wherein the dynamics of both the injector and the interface play a significant role in the spin accumulation, represents a new regime for spin injection that is not well described by existing models of either FMR-driven spin pumping or electrical spin injection. PMID:26705647

  1. Practical anti-reflection coating for metal semiconductor solar cells

    NASA Technical Reports Server (NTRS)

    Yeh, Y.-C. M.; Stirn, R. J.

    1975-01-01

    The metal-semiconductor solar cell is a possible candidate for converting solar to electrical energy for terrestrial application. A method is given for obtaining optical parameters of practical antireflection coatings for the metal-semiconductor solar cell. This method utilizes the measured refractive index obtained from ellipsometry since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculation of optical parameters for Ta2O5 antireflection coatings on Au-GaAs and Au-GaAs(0.78)P(0.22) solar cells are presented for comparison.

  2. Modeling of Metal-Ferroelectric-Semiconductor Field Effect Transistors

    NASA Technical Reports Server (NTRS)

    Duen Ho, Fat; Macleod, Todd C.

    1998-01-01

    The characteristics for a MFSFET (metal-ferroelectric-semiconductor field effect transistor) is very different than a conventional MOSFET and must be modeled differently. The drain current has a hysteresis shape with respect to the gate voltage. The position along the hysteresis curve is dependent on the last positive or negative polling of the ferroelectric material. The drain current also has a logarithmic decay after the last polling. A model has been developed to describe the MFSFET drain current for both gate voltage on and gate voltage off conditions. This model takes into account the hysteresis nature of the MFSFET and the time dependent decay. The model is based on the shape of the Fermi-Dirac function which has been modified to describe the MFSFET's drain current. This is different from the model proposed by Chen et. al. and that by Wu.

  3. Metal-semiconductor transition of graphene nanoribbons with different addends

    NASA Astrophysics Data System (ADS)

    Zhang, X. W.; Dai, B.; Liu, J. S.; Yang, G. W.

    2012-02-01

    Using a LCAO method, which is based on spinless sp3 scheme, we have studied the electronic properties of graphene nanoribbons with zigzag edges (ZGNRs) terminated partially by methylene groups. Metal-semiconductor transition is proved when the H atoms at both sides of ZGNRs are partially substituted by methylene groups. Furthermore, when one-third of H atoms are substituted and the distribution of methylenes is symmetric, the band gap comes to about 0.59 eV, which is the widest energy gap in this work. Otherwise, when the addends at both sides are of asymmetric distribution, a band gap of only 0.21 eV is obtained. These results suggest that the addends at the edge of ZGNRs play an important role in modifying the electronic properties.

  4. GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect

    Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

    1999-03-02

    A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

  5. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Ťapajna, M.; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Brunner, F.; Cho, E.-M.; Kuzmík, J.

    2013-06-01

    The trapping phenomena in GaN metal-oxide-semiconductor high-electron mobility transistor structures with 10 and 20-nm thick Al2O3 gate dielectric grown by metal-organic chemical vapor deposition were deeply investigated using comprehensive capacitance-voltage measurements. By controlling the interface traps population, substantial electron trapping in the dielectric bulk was identified. Separation between the trapping process and the interface traps emission allowed us to determine distribution of interface trap density in a wide energy range. Temperature dependence of the trapping process indicates thermionic field emission of electrons from the gate into traps with a sheet density of ~1013 cm-2, located a few nm below the gate.

  6. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Ťapajna, M.; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Brunner, F.; Cho, E.-M.; Kuzmík, J.

    2013-06-01

    The trapping phenomena in GaN metal-oxide-semiconductor high-electron mobility transistor structures with 10 and 20-nm thick Al2O3 gate dielectric grown by metal-organic chemical vapor deposition were deeply investigated using comprehensive capacitance-voltage measurements. By controlling the interface traps population, substantial electron trapping in the dielectric bulk was identified. Separation between the trapping process and the interface traps emission allowed us to determine distribution of interface trap density in a wide energy range. Temperature dependence of the trapping process indicates thermionic field emission of electrons from the gate into traps with a sheet density of ˜1013 cm-2, located a few nm below the gate.

  7. Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

    PubMed

    Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

    2012-08-28

    Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis. PMID:22792998

  8. Plasmonic nanostructured metal-oxide-semiconductor reflection modulators.

    PubMed

    Olivieri, Anthony; Chen, Chengkun; Hassan, Sa'ad; Lisicka-Skrzek, Ewa; Tait, R Niall; Berini, Pierre

    2015-04-01

    We propose a plasmonic surface that produces an electrically controlled reflectance as a high-speed intensity modulator. The device is conceived as a metal-oxide-semiconductor capacitor on silicon with its metal structured as a thin patch bearing a contiguous nanoscale grating. The metal structure serves multiple functions as a driving electrode and as a grating coupler for perpendicularly incident p-polarized light to surface plasmons supported by the patch. Modulation is produced by charging and discharging the capacitor and exploiting the carrier refraction effect in silicon along with the high sensitivity of strongly confined surface plasmons to index perturbations. The area of the modulator is set by the area of the incident beam, leading to a very compact device for a strongly focused beam (∼2.5 μm in diameter). Theoretically, the modulator can operate over a broad electrical bandwidth (tens of gigahertz) with a modulation depth of 3 to 6%, a loss of 3 to 4 dB, and an optical bandwidth of about 50 nm. About 1000 modulators can be integrated over a 50 mm(2) area producing an aggregate electro-optic modulation rate in excess of 1 Tb/s. We demonstrate experimentally modulators operating at telecommunications wavelengths, fabricated as nanostructured Au/HfO2/p-Si capacitors. The modulators break conceptually from waveguide-based devices and belong to the same class of devices as surface photodetectors and vertical cavity surface-emitting lasers. PMID:25730698

  9. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  10. Metal/Semiconductor hybrid nanostructures for plasmon-enhanced applications.

    PubMed

    Jiang, Ruibin; Li, Benxia; Fang, Caihong; Wang, Jianfang

    2014-08-20

    Hybrid nanostructures composed of semiconductor and plasmonic metal components are receiving extensive attention. They display extraordinary optical characteristics that are derived from the simultaneous existence and close conjunction of localized surface plasmon resonance and semiconduction, as well as the synergistic interactions between the two components. They have been widely studied for photocatalysis, plasmon-enhanced spectroscopy, biotechnology, and solar cells. In this review, the developments in the field of (plasmonic metal)/semiconductor hybrid nanostructures are comprehensively described. The preparation of the hybrid nanostructures is first presented according to the semiconductor type, as well as the nanostructure morphology. The plasmonic properties and the enabled applications of the hybrid nanostructures are then elucidated. Lastly, possible future research in this burgeoning field is discussed. PMID:24753398

  11. High-temperature Complementary Metal Oxide Semiconductors (CMOS)

    NASA Technical Reports Server (NTRS)

    Mcbrayer, J. D.

    1981-01-01

    The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.

  12. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  13. Different effects of electronic excitation on metals and semiconductors

    NASA Astrophysics Data System (ADS)

    Yan, Gai-Qin; Cheng, Xin-Lu; Zhang, Hong; Zhu, Zhi-Yang; Ren, Da-Hua

    2016-06-01

    We study the electronic excitation effect upon ultrafast and intense laser irradiation on the stability of target materials, using density functional perturbation theory. The target materials include metals (Li, Na, Mg, Al, K, W, Au), Bi as a semimetal, and Si as a semiconductor. We found that the electronic excitation had different effects on the two distinct materials. For metals, the electronic pressure induces an increase in the shear modulus and presents a negative effect on the phonon entropy, which increases the lattice vibration frequency and melting temperature, leading to a higher stability for the close-packed structure (Al, Au, Mg). Conversely, the electronic pressure induces a decreasing trend in all these quantities, leading to a lower degree of stability and even a structural destabilization in the case of bcc-structured metals (W, Na, K, and Li). For semimetals and semiconductors, the internal pressure induces a completely opposite behavior with respect to close-packed structure metals. This can lead to structural destabilization for semimetals and even collapse for semiconductors. Finally, a shift of the Raman and infrared active modes is revealed for semimetals and semiconductors.

  14. Metal Insulator Semiconductor Structures on Gallium Arsenide.

    NASA Astrophysics Data System (ADS)

    Connor, Sean Denis

    Available from UMI in association with The British Library. The compound semiconductor gallium arsenide and its associated aluminium alloys have been the subject of intensive research in recent years. These materials offer the advantage of high electron mobilities coupled with the ability to be 'barrier engineered' leading to high injection efficiencies in bipolar devices. From a technological viewpoint however these materials are difficult to work with and device realisation is a major problem. Both thermal and anodic oxidation of these materials fail to produce a dielectric of sufficient quality for device applications and as a result devices tend to be complex non planar, mesa structures. A technique is proposed whereby the electrical interface is separated from the dielectric by means of a thin layer of AlGaAs, carrier confinement in the active GaAs region being maintained by the potential barriers to holes and electrons formed by the GaAs-AlGaAs junction. The integrity of these barriers is maintained by the provision of a suitable 'capping' dielectric. The electrical characteristics of various dielectric systems on GaAs have been investigated by means of current -voltage, capacitance-voltage and electronic breakdown measurements. Transport mechanisms for leakage current through these systems are identified and the interface properties (viz Fermi level pinning etc.) assessed by means of a direct comparison between experimental capacitance-voltage curves and theoretical data obtained from classical theory. As a technique for producing a convenient, in house 'capping' dielectric with good electrical and mechanical properties, the plasma anodisation of deposited aluminium films has been investigated. The anodisation parameters have been optimised for oxidation of these films in a microwave sustained oxygen plasma to give alumina films of around 500 A. A qualitative model for the anodisation process, involving linear and parabolic growth kinetics is proposed and

  15. Asymmetrically contacted germanium photodiode using a metal-interlayer-semiconductor-metal structure for extremely large dark current suppression.

    PubMed

    Zang, Hwan-Jun; Kim, Gwang-Sik; Park, Gil-Jae; Choi, Yong-Soo; Yu, Hyun-Yong

    2016-08-15

    In this study, we proposed germanium (Ge) metal-interlayer-semiconductor-metal (MISM) photodiodes (PD), with an anode of a metal-interlayer-semiconductor (MIS) contact and a cathode of a metal-semiconductor (MS) contact, to efficiently suppress the dark current of Ge PD. We selected titanium dioxide (TiO2) as an interlayer material for the MIS contact, due to its large valence band offset and negative conduction band offset to Ge. We significantly suppress the dark current of Ge PD by introducing the MISM structure with a TiO2 interlayer, as this enhances the hole Schottky barrier height, and thus acts as a large barrier for holes. In addition, it collects photo-generated carriers without degradation, due to its negative conduction band offset to Ge. This reduces the dark current of Ge MISM PDs by ×8000 for 7-nm-thick TiO2 interlayer, while its photo current is still comparable to that of Ge metal-semiconductor-metal (MSM) PDs. Furthermore, the proposed Ge PD shows ×6,600 improvement of the normalized photo-to-dark-current ratio (NPDR) at a wavelength of 1.55 μm. The proposed Ge MISM PD shows considerable promise for low power and high sensitivity Ge-based optoelectronic applications. PMID:27519063

  16. High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials

    PubMed Central

    Spannhake, Jan; Schulz, Olaf; Helwig, Andreas; Krenkow, Angelika; Müller, Gerhard; Doll, Theodor

    2006-01-01

    Micromachined thermal heater platforms offer low electrical power consumption and high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report on investigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated by employing different kinds of metallic and semiconductor heater materials. Our results clearly reveal the superior high-temperature performance of semiconductor over metallic heater materials. Long-term stable emitter operation in the vicinity of 1300 K could be attained using heavily antimony-doped tin dioxide (SnO2:Sb) heater elements.

  17. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

    NASA Astrophysics Data System (ADS)

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-03-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of ‑2 V and drain bias of ‑15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.

  18. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

    PubMed

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-01-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm(2)/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG. PMID:27021054

  19. The empirical dependence of radiation-induced charge neutralization on negative bias in dosimeters based on the metal-oxide-semiconductor field-effect transistor

    SciTech Connect

    Benson, Chris; Albadri, Abdulrahman; Joyce, Malcolm J.; Price, Robert A.

    2006-08-15

    The dependence of radiation-induced charge neutralization (RICN) has been studied in metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters. These devices were first exposed to x rays under positive bias and then to further dose increments at a selection of reverse bias levels. A nonlinear empirical trend has been established that is consistent with that identified in the data obtained in this work. Estimates for the reverse bias level corresponding to the maximum rate of RICN have been extracted from the data. These optimum bias levels appear to be independent of the level of initial absorbed dose under positive bias. The established models for threshold voltage change have been considered and indicate a related nonlinear trend for neutralization cross section {sigma}{sub N} as a function of oxide field. These data are discussed in the context of dose measurement with MOSFETs and within the framework of statistical mechanics associated with neutral traps and their field dependence.

  20. 1.2-17.6 GHz Ring-Oscillator-Based Phase-Locked Loop with Injection Locking in 65 nm Complementary Metal Oxide Semiconductor

    NASA Astrophysics Data System (ADS)

    Lee, Sang-yeop; Ito, Hiroyuki; Amakawa, Shuhei; Tanoi, Satoru; Ishihara, Noboru; Masu, Kazuya

    2012-02-01

    A wide-frequency-range phase-locked loop (PLL) with subharmonic injection locking is proposed. The PLL is equipped with a wide tunable ring-type voltage-controlled oscillator (ring VCO), frequency dividers, and a doubler in order to the widen injection-locked tuning range (ILTR). In addition, high-frequency injection signals are used to improve phase noise, which is supposed to be generated by a reference PLL. The proposed circuit is fabricated by using a 65 nm Si complementary metal oxide semiconductor (CMOS) process. The measured frequency tuning range is from 1.2 to 17.6 GHz with a frequency doubler and dividers. The phase noise at 14.4 GHz (=32×450 MHz) with injection locking was -109 dBc/Hz, which shows a 21-dB reduction compared with that in the case without injection locking.

  1. 0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

    NASA Astrophysics Data System (ADS)

    Kamimura, Tatsuya; Lee, Sang-yeop; Tanoi, Satoru; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2012-04-01

    A low power-supply voltage and high-frequency quadrature voltage-controlled oscillator (QVCO) using a combination of capacitor coupling and transformer feedback techniques is presented. The capacitor coupling technique can boost the transconductance of the LC-VCO core and coupling transconductance of QVCO at high frequency. Also, this technique can improve the quality factor of the QVCO at high frequency with low power-supply voltage, compared with the conventional QVCO. In addition, the capacitor coupling QVCO with transformer feedback can improve the quality factor of QVCO. Using this topology, the QVCO is able to operate at over 10 GHz with lower power-supply voltage. Implemented in the 90 nm complementary metal oxide semiconductor (CMOS) process, the proposed QVCO measures 1-MHz-offset phase noise of -94 dBc/Hz at 13 GHz while consuming 0.68 mW from a 0.1 V power-supply.

  2. Trap Profiling Based on Frequency Varied Charge Pumping Method for Hot Carrier Stressed Thin Gate Oxide Metal Oxide Semiconductors Field Effect Transistors.

    PubMed

    Choi, Pyungho; Kim, Hyunjin; Kim, Sangsub; Kim, Soonkon; Javadi, Reza; Park, Hyoungsun; Choi, Byoungdeog

    2016-05-01

    In this study, pulse frequency and reverse bias voltage is modified in charge pumping and advanced technique is presented to extract oxide trap profile in hot carrier stressed thin gate oxide metal oxide semiconductor field effect transistors (MOSFETs). Carrier trapping-detrapping in a gate oxide was analyzed after hot carrier stress and the relationship between trapping depth and frequency was investigated. Hot carrier induced interface traps appears in whole channel area but induced border traps mainly appears in above pinch-off region near drain and gradually decreases toward center of the channel. Thus, hot carrier stress causes interface trap generation in whole channel area while most border trap generation occurs in the drain region under the gate. Ultimately, modified charge pumping method was performed to get trap density distribution of hot carrier stressed MOSFET devices, and the trapping-detrapping mechanism is also analyzed. PMID:27483833

  3. Nanoscale High-Speed Metal-Semiconductor Photodetectors

    NASA Astrophysics Data System (ADS)

    Liu, Mark Yue

    This thesis work studies the design, fabrication and characterization of nanoscale high-speed metal-semiconductor -metal (MSM) photodetectors. Smallest, fastest MSM photodetectors will be presented. Important design issues such as carrier transit time, carrier recombination time, light penetration depth, and device parasitic elements are investigated. Carrier transport in nanoscale detectors is studied using a Monte Carlo method. Based on the theoretical and experimental data, scaling rules for high-speed operation of MSM photodetectors are proposed. Nanoscale MSM photodetectors are fabricated using a custom-built ultra-high-resolution electron beam lithography system and a lift-off process. Different resist schemes and accurate dose control are essential to produce desired nanoscale structures. MSM photodetectors with finger spacing and width as small as 25 nm are fabricated on GaAs, Si and silicon-on-insulator (SOI) substrate. To our knowledge, they represent the smallest ever reported to date. Sub-picosecond characterization of the detectors' impulse response is performed using an electro-optic system and a femtosecond laser. The fastest MSM photodetectors have a response time and a 3-dB bandwidth of, respectively, 0.87 ps and 510 GHz on low-temperature-grown GaAs, 1.5 ps and 300 GHz on bulk GaAs, 3.7 ps and 110 GHz on bulk Si, and 3.2 ps and 140 GHz on SOI. They are, to the best of our knowledge, the fastest photodetectors of their kind. MSM photodetectors on GaAs and Si can also be used at 1.3 to 1.55 μm wavelength range, based on the internal emission of carriers at the metal-semiconductor interface. The performance of the GaAs and Si detector at 1.3 μm wavelength, including the dependence of responsivity on finger size, optical power, and applied bias, will be presented in this thesis. Finally, we will propose a new silicon Fabry-Perot planar waveguide modulator structure consisting of two Bragg mirrors, which are nanoscale trenches in the waveguide

  4. Metal Semiconductor Heterostructures for Photocatalytic Conversion of Light Energy.

    PubMed

    Dutta, Sumit Kumar; Mehetor, Shyamal Kumar; Pradhan, Narayan

    2015-03-19

    For fast separation of the photogenerated charge carriers, metal semiconductor heterostructures have emerged as one of the leading materials in recent years. Among these, metal Au coupled with low bandgap semiconductors remain as ideal materials where both can absorb the solar light in the visible region. It is also established that on excitation, the plasmonic state of gold interacts with excited state of semiconductor and helps for the delocalization of the photogenerated electrons. Focusing these materials where electron transfer preferably occurs from semiconductor to metal Au on excitation, in this Perspective, we report the latest developments in the synthetic chemistry in designing such nano heterostructures and discuss their photocatalytic activities in organic dye degradation/reduction and/or photocatalytic water splitting for generation of hydrogen. Among these, materials such as Au-CZTS, Au-SnS, Au-Bi2S3, Au-ZnSe, and so forth are emphasized, and their formation chemistry as well as their photocatalytic activities are discussed in this Perspective. PMID:26262849

  5. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition. PMID:26618885

  6. Metal-insulator transition in films of doped semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Chen, Ting; Reich, K. V.; Kramer, Nicolaas J.; Fu, Han; Kortshagen, Uwe R.; Shklovskii, B. I.

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  7. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    NASA Astrophysics Data System (ADS)

    Torres Sevilla, G. A.; Almuslem, A. S.; Gumus, A.; Hussain, A. M.; Cruz, M. E.; Hussain, M. M.

    2016-02-01

    Thinned silicon based complementary metal oxide semiconductor (CMOS) electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOS inverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible silicon CMOS inverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  8. Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

    ERIC Educational Resources Information Center

    Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

    2008-01-01

    An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

  9. Formation and properties of metallic nanoparticles on compound semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Kang, Myungkoo

    When electromagnetic radiation is incident upon metallic nanoparticles (NPs), a collective oscillation, termed a surface plasmon resonance (SPR), is generated. Recently, metallic NPs on semiconductor surfaces have enabled the generation of SPR, promising for enhanced light emission, efficient solar energy harvesting, biosensing, and metamaterials. Metallic NPs have been fabricated by focused ion beam (FIB) which has an advantage of cost-effectiveness over conventional lithography process requiring multi-step processes. Here, we report formation and properties of FIB-induced metallic NPs on compound semiconductor surfaces. Results presented in this thesis study suggest that FIB-induced Ga NPs can be a promising alternative plasmonic material. In particular, using a combined experimental-computational approach, we discovered a universal mechanism for ion-induced NP formation, which is governed by the sputtering yield of semiconductor surfaces. We also discovered a governing mechanism for ion-induced NP motion, which is driven by thermal fluctuation and anisotropic mass transport. Furthermore, we demonstrated Ga NP arrays with plasmon resonances with performance comparable to those of traditionally-used silver and gold NPs. We then finally demonstrated the Ga NP plasmoninduced enhancement of light emission from GaAs, which is the first ever combination of a new plasmonic material (Ga) and a new fabrication method (FIB) for the plasmon-enhanced light emission.

  10. Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application

    PubMed Central

    Wu, Kai; Zhan, Yaohui; Zhang, Cheng; Wu, Shaolong; Li, Xiaofeng

    2015-01-01

    We propose an architecture of conformal metal-semiconductor-metal (MSM) device for hot-electron photodetection by asymmetrical alignment of the semiconductor barrier relative to the Fermi level of metals and strong energy localization through plasmonic resonances. Compared with the conventional grating design, the multi-layered grating system under conformal configuration is demonstrated to possess both optical and electrical advantages for high-sensitivity hot-electron photodetection. Finite-element simulation reveals that a strong and highly asymmetrical optical absorption (top metal absorption >99%) can be realized under such a conformal arrangement. An analytical probability-based electrical simulation verifies the strong unidirectional photocurrent, by taking advantage of the extremely high net absorption and a low metal/semiconductor barrier height, and predicts that the corresponding photoresponsivity can be ~3 times of that based on the conventional grating design in metal-insulator-metal (MIM) configuration. PMID:26387836

  11. Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application.

    PubMed

    Wu, Kai; Zhan, Yaohui; Zhang, Cheng; Wu, Shaolong; Li, Xiaofeng

    2015-01-01

    We propose an architecture of conformal metal-semiconductor-metal (MSM) device for hot-electron photodetection by asymmetrical alignment of the semiconductor barrier relative to the Fermi level of metals and strong energy localization through plasmonic resonances. Compared with the conventional grating design, the multi-layered grating system under conformal configuration is demonstrated to possess both optical and electrical advantages for high-sensitivity hot-electron photodetection. Finite-element simulation reveals that a strong and highly asymmetrical optical absorption (top metal absorption >99%) can be realized under such a conformal arrangement. An analytical probability-based electrical simulation verifies the strong unidirectional photocurrent, by taking advantage of the extremely high net absorption and a low metal/semiconductor barrier height, and predicts that the corresponding photoresponsivity can be ~3 times of that based on the conventional grating design in metal-insulator-metal (MIM) configuration. PMID:26387836

  12. Superabsorbing, Artificial Metal Films Constructed from Semiconductor Nanoantennas.

    PubMed

    Kim, Soo Jin; Park, Junghyun; Esfandyarpour, Majid; Pecora, Emanuele F; Kik, Pieter G; Brongersma, Mark L

    2016-06-01

    In 1934, Wilhelm Woltersdorff demonstrated that the absorption of light in an ultrathin, freestanding film is fundamentally limited to 50%. He concluded that reaching this limit would require a film with a real-valued sheet resistance that is exactly equal to R = η/2 ≈ 188.5Ω/□, where [Formula: see text] is the impedance of free space. This condition can be closely approximated over a wide frequency range in metals that feature a large imaginary relative permittivity εr″, that is, a real-valued conductivity σ = ε0εr″ω. A thin, continuous sheet of semiconductor material does not facilitate such strong absorption as its complex-valued permittivity with both large real and imaginary components preclude effective impedance matching. In this work, we show how a semiconductor metafilm constructed from optically resonant semiconductor nanostructures can be created whose optical response mimics that of a metallic sheet. For this reason, the fundamental absorption limit mentioned above can also be reached with semiconductor materials, opening up new opportunities for the design of ultrathin optoelectronic and light harvesting devices. PMID:27149008

  13. Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

    NASA Astrophysics Data System (ADS)

    Kang, Jiahao; Liu, Wei; Sarkar, Deblina; Jena, Debdeep; Banerjee, Kaustav

    2014-07-01

    Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with intrinsic band gaps (1-2 eV) are considered promising candidates for channel materials in next-generation transistors. Low-resistance metal contacts to mTMDs are crucial because currently they limit mTMD device performances. Hence, a comprehensive understanding of the atomistic nature of metal contacts to these 2D crystals is a fundamental challenge, which is not adequately addressed at present. In this paper, we report a systematic study of metal-mTMD contacts with different geometries (top contacts and edge contacts) by ab initio density-functional theory calculations, integrated with Mulliken population analysis and a semiempirical van der Waals dispersion potential model (which is critical for 2D materials and not well treated before). Particularly, In, Ti, Au, and Pd, contacts to monolayer MoS2 and WSe2 as well as Mo-MoS2 and W-WSe2 contacts are evaluated and categorized, based on their tunnel barriers, Schottky barriers, and orbital overlaps. Moreover, going beyond Schottky theory, new physics in such contact interfaces is revealed, such as the metallization of mTMDs and abnormal Fermi level pinning. Among the top contacts to MoS2, Ti and Mo show great potential to form favorable top contacts, which are both n-type contacts, while for top contacts to WSe2, W or Pd exhibits the most advantages as an n- or p-type contact, respectively. Moreover, we find that edge contacts can be highly advantageous compared to top contacts in terms of electron injection efficiency. Our formalism and the results provide guidelines that would be invaluable for designing novel 2D semiconductor devices.

  14. Single-photon imaging in complementary metal oxide semiconductor processes

    PubMed Central

    Charbon, E.

    2014-01-01

    This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

  15. Single-photon imaging in complementary metal oxide semiconductor processes.

    PubMed

    Charbon, E

    2014-03-28

    This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

  16. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Mak, Kin Fai; Shan, Jie

    2016-04-01

    Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties.

  17. Finite Element Simulation of Metal-Semiconductor-Metal Photodetector

    SciTech Connect

    Guarino, G.; Donaldson, W.R.; Mikulics, M.; Marso, M.; Kordos, P.; Sobolewski, R.

    2009-08-19

    The successful application of finite element analysis to ultrafast optoelectronic devices is demonstrated. Finite element models have been developed for both an alloyed- and surface-contact metal–semiconductor–metal photodetectors. The simulation results agree with previously reported experimental data. The alloyed device, despite having a somewhat larger capacitance, has a non-illuminated region of lower resistance with a more-uniform and deeper-penetrating electric field and carrier transport current. The latter explains, in terms of the equivalent lumped parameters, the experimentally observed faster response of the alloyed device. The model is further used to predict improved responsivity, based on electrode spacing and antireflective coating. We project that increasing the depth of the alloyed contact beyond approximately half of the optical penetration depth will not yield significantly improved responsivity.

  18. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  19. Conduction properties of metal/organic monolayer/semiconductor heterostructures

    SciTech Connect

    Li, D.; Bishop, A.; Gim, Y.; Shi, X.B.; Fitzsimmons, M.R.; Jia, Q.X.

    1998-11-01

    We have fabricated and characterized rectifying devices made of metal/organic monolayer/semiconductor heterostructures. The devices consist of an organic barrier layer sandwiched between an aluminum (Al) metal contact and a {ital p}-type Si semiconductor. The barrier materials were chosen from three types of self-assembled monolayers (SAMs) with different electronic properties: (1) wide-band gap poly(diallydimethyl ammonium) chloride (PDDA), (2) narrow-band gap PDDA/NiPc (nickel phthalocyanine tetrasulfonate), and (3) donor type PDDA/PPP (poly {ital p}-quaterphenylene-disulfonic-dicarboxylic acid). From current{endash}voltage (I{endash}V) measurements at room temperature, we have found the turn-on voltage of the devices can be tuned by varying the structure, hence electronic properties, of the organic monolayers, and that there exists a power-law dependence of {ital I} on V, I{proportional_to}V{sup {alpha}}, with the exponent {alpha}=2.2 for PDDA, 2.7 for PDDA/NiPc, and 1.44 for PDDA/PPP as the barrier layer, respectively. Our results imply that the transport properties are controlled by both the electronic properties of the SAMs and those of the metal and semiconductor, as indicated by the power-law dependence of the I{endash}V characteristics. {copyright} {ital 1998 American Institute of Physics.}

  20. Metal Oxide Semi-Conductor Gas Sensors in Environmental Monitoring

    PubMed Central

    Fine, George F.; Cavanagh, Leon M.; Afonja, Ayo; Binions, Russell

    2010-01-01

    Metal oxide semiconductor gas sensors are utilised in a variety of different roles and industries. They are relatively inexpensive compared to other sensing technologies, robust, lightweight, long lasting and benefit from high material sensitivity and quick response times. They have been used extensively to measure and monitor trace amounts of environmentally important gases such as carbon monoxide and nitrogen dioxide. In this review the nature of the gas response and how it is fundamentally linked to surface structure is explored. Synthetic routes to metal oxide semiconductor gas sensors are also discussed and related to their affect on surface structure. An overview of important contributions and recent advances are discussed for the use of metal oxide semiconductor sensors for the detection of a variety of gases—CO, NOx, NH3 and the particularly challenging case of CO2. Finally a description of recent advances in work completed at University College London is presented including the use of selective zeolites layers, new perovskite type materials and an innovative chemical vapour deposition approach to film deposition. PMID:22219672

  1. Photoinduced electron transfer from phycoerythrin to colloidal metal semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Kathiravan, A.; Chandramohan, M.; Renganathan, R.; Sekar, S.

    2009-04-01

    Phycoerythrin is a water soluble pigment which absorbs in the visible region at 563 nm. The interaction of phycoerythrin with colloidal metal semiconductors was studied by absorption, FT-IR and fluorescence spectroscopy. Phycoerythrin adsorbed strongly on the surface of TiO 2 nanoparticles, the apparent association constant for the association between colloidal metal-TiO 2 nanoparticles and phycoerythrin was determined from fluorescence quenching data. The free energy change (Δ Get) for electron transfer process has been calculated by applying Rehm-Weller equation.

  2. Scalability of Schottky barrier metal-oxide-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Jang, Moongyu

    2016-05-01

    In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are estimated as 1.5 × 1013 traps/cm2, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N2 annealing. Based on the diode characteristics, various sizes of erbium-silicided/platinum-silicided n/p-type SB-MOSFETs are manufactured and analyzed. The manufactured SB-MOSFETs show enhanced drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are comparable with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

  3. Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors by a Novel Direct Current Current-Voltage Technique

    NASA Astrophysics Data System (ADS)

    He, Yandong; Zhang, Ganggang

    2012-04-01

    Shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular with its better tradeoff between breakdown voltage and on-resistance and its compatibility with the standard complementary metal-oxide-semiconductor (CMOS) process. A novel direct current current-voltage (DCIV) technique demonstrated with multiple sharp peak signals is proposed to characterize interface state generation in the channel and in the STI drift regions separately. Degradation of STI-based LDMOS transistors in various hot-carrier stress modes is investigated experimentally by proposed technique. A two-dimensional numerical device simulation is performed to obtain insight into the proposed technique and device degradation characteristics under hot-carrier stress conditions. The impact of interface state location on device electrical characteristics is analyzed from measurement and simulation. Our results show that the maximum Isub stress becomes the worst hot-carrier degradation mode in term of the on-resistance degradation, which is attributed to interface state generation under STI drift region.

  4. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

    PubMed Central

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-01-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of −2 V and drain bias of −15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG. PMID:27021054

  5. Fabrication and characterization of metal-semiconductor-metal nanorod using template synthesis

    SciTech Connect

    Kim, Kyohyeok; Kwon, Namyong; Hong, Junki; Chung, Ilsub

    2009-07-15

    The authors attempted to fabricate and characterize one dimensional metal-semiconductor-metal (MSM) nanorod using a template. Cadmium selenide (CdSe) and polypyrrole (Ppy) were chosen as n-type and p-type semiconductor materials, respectively, whereas Au was chosen as a metal electrode. The fabrication of the nanorod was achieved by ''template synthesis'' method using polycarbonate membrane. The structure of the fabricated nanorod was analyzed using scanning electron microscopy and energy dispersive spectroscopy. In addition, the electrical properties of MSM nanorods were characterized using scanning probe microscopy (Seiko Instruments, SPA 300 HV) by probing with a conductive cantilever. I-V characteristics as a function of the temperature give the activation energy, as well as the barrier height of a metal-semiconductor contact, which is useful to understand the conduction mechanism of MSM nanorods.

  6. Amorphous metallizations for high-temperature semiconductor device applications

    NASA Technical Reports Server (NTRS)

    Wiley, J. D.; Perepezko, J. H.; Nordman, J. E.; Kang-Jin, G.

    1981-01-01

    The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.

  7. Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD

    NASA Astrophysics Data System (ADS)

    Orzali, Tommaso; Vert, Alexey; Kim, Tae-Woo; Hung, P. Y.; Herman, Joshua L.; Vivekanand, Saikumar; Huang, Gensheng; Kelman, Max; Karim, Zia; Hill, Richard J. W.; Rao, Satyavolu S. Papa

    2015-10-01

    We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C-V characteristics and interfacial trap density (Dit) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15 μm thick GaAs/InP buffer with a defect density in the low 109 cm-2 range and a surface roughness rms value <2 nm was used to accommodate the large lattice mismatch between In0.53Ga0.47As and Si.

  8. Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

    NASA Technical Reports Server (NTRS)

    Danchenko, V.

    1974-01-01

    Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

  9. ``Electric growth`` of metal overlayers on semiconductor substrates

    SciTech Connect

    Zhang, Z.; Cho, J.H. |; Niu, Q.; Shih, C.K.; Suo, Z.

    1998-02-01

    In this article, the authors present the main results from their recent studies of metal overlayer growth on semiconductor substrates. They show that a variety of novel phenomena can exist in such systems, resulting from several competing interactions. The confined motion of the conduction electrons within the metal overlayer can mediate a surprisingly long-range repulsive force between the metal-semiconductor interface and the growth front, acting to stabilize the overlayer. Electron transfer from the overlayer to the substrate leads to an attractive force between the two interfaces, acting to destabilize the overlayer. Interface-induced Friedel oscillations in electron density can further impose an oscillatory modulation onto the two previous interactions. These three competing factors, of all electronic nature, can make a flat metal overlayer critically, marginally, or magically stable, or totally unstable against roughening. The authors further show that, for many systems, these electronic effects can easily win over the effect of stress. First-principles studies of a few representative systems support the main features of the present electronic growth concept.

  10. How many electrons make a semiconductor nanocrystal film metallic

    NASA Astrophysics Data System (ADS)

    Reich, Konstantin; Chen, Ting; Kramer, Nicolaas; Fu, Han; Kortshagen, Uwe; Shklovskii, Boris

    For films of semiconductor nanocrystals to achieve their potential as novel, low-cost electronic materials, a better understanding of their doping to tune their conductivity is required. So far, it not known how many dopants will turn a nanocrystal film from semiconducting to metallic. In bulk semiconductors, the critical concentration nM of electrons at the metal-insulator transition is described by the famous Mott criterion: nMaB3 ~= 0 . 02 , where aB is the effective Bohr radius. We show theoretically that in a dense NC film, where NCs touch each other by small facets, the concentration of electrons nc >>nM at the metal-insulator transition satisfies the condition: ncρ3 ~= 0 . 3 , where ρ is a radius of contact facets. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition. This work was supported primarily by the National Science Foundation through the University of Minnesota MRSEC under Award No. DMR-1420013.

  11. Defect production and annealing kinetics in elemental metals and semiconductors

    NASA Astrophysics Data System (ADS)

    de la Rubia, T. Diaz; Soneda, N.; Caturla, M. J.; Alonso, E. A.

    1997-11-01

    We present a review of recent results of molecular dynamics (MD) and kinetic Monte Carlo (KMC) simulations of defect production and annealing in irradiated metals and semiconductors. The MD simulations describe the primary damage state in elemental metals Fe, V and Au, and in an elemental semiconductor Si. We describe the production of interstitial and vacancy clusters in the cascades and highlight the differences among the various materials. In particular, we discuss how covalent bonding in Si affects defect production and amorphization resulting in a very different primary damage state from the metals. We also use MD simulations to extract prefactors and activation energies for migration of point defects, as well as to investigate the energetics, geometry and diffusivity of small vacancy and interstitial clusters. We show that, in the metals, small interstitial clusters are highly mobile and glide in one dimension along the direction of the Burger's vector. In silicon, we show that, in contrast to the metals, the neutral vacancy diffuses faster than the neutral self-interstitial. The results for the primary damage state and for the defect energetics and kinetics are then combined and used in a kinetic Monte Carlo simulation to investigate the escape efficiency of defects from their nascent cascade in metals, and the effect of dose rate on damage accumulation and amorphization in silicon. We show that in fee metals Au and Pb at or above stage V the escape probability is approximately 40% for 30 keV recoils so that the freely migrating defect fraction is approximately 10% of the dpa standard. In silicon, we show that damage accumulation at room temperature during light ion implantation can be significantly reduced by decreasing the dose rate. The results are compared to scanning tunneling microscopy experiments.

  12. All-Graphene Planar Self-Switching MISFEDs, Metal-Insulator-Semiconductor Field-Effect Diodes

    PubMed Central

    Al-Dirini, Feras; Hossain, Faruque M.; Nirmalathas, Ampalavanapillai; Skafidas, Efstratios

    2014-01-01

    Graphene normally behaves as a semimetal because it lacks a bandgap, but when it is patterned into nanoribbons a bandgap can be introduced. By varying the width of these nanoribbons this band gap can be tuned from semiconducting to metallic. This property allows metallic and semiconducting regions within a single Graphene monolayer, which can be used in realising two-dimensional (2D) planar Metal-Insulator-Semiconductor field effect devices. Based on this concept, we present a new class of nano-scale planar devices named Graphene Self-Switching MISFEDs (Metal-Insulator-Semiconductor Field-Effect Diodes), in which Graphene is used as the metal and the semiconductor concurrently. The presented devices exhibit excellent current-voltage characteristics while occupying an ultra-small area with sub-10 nm dimensions and an ultimate thinness of a single atom. Quantum mechanical simulation results, based on the Extended Huckel method and Nonequilibrium Green's Function Formalism, show that a Graphene Self-Switching MISFED with a channel as short as 5 nm can achieve forward-to-reverse current rectification ratios exceeding 5000. PMID:24496307

  13. Nonequilibrium carrier dynamics in transition metal dichalcogenide semiconductors

    NASA Astrophysics Data System (ADS)

    Steinhoff, A.; Florian, M.; Rösner, M.; Lorke, M.; Wehling, T. O.; Gies, C.; Jahnke, F.

    2016-09-01

    When exploring new materials for their potential in (opto)electronic device applications, it is important to understand the role of various carrier interaction and scattering processes. In atomically thin transition metal dichalcogenide semiconductors, the Coulomb interaction is known to be much stronger than in quantum wells of conventional semiconductors like GaAs, as witnessed by the 50 times larger exciton binding energy. The question arises, whether this directly translates into equivalently faster carrier–carrier Coulomb scattering of excited carriers. Here we show that a combination of ab initio band-structure and many-body theory predicts Coulomb-mediated carrier relaxation on a sub-100 fs time scale for a wide range of excitation densities, which is less than an order of magnitude faster than in quantum wells.

  14. Rare Earth Metal/semiconductor Interfaces and Compounds

    NASA Astrophysics Data System (ADS)

    Nogami, Jun

    Interfaces formed at room temperature by incremental deposition of rare earth metals onto semiconductor substrates have been studied with surface sensitive soft X-ray photoelectron spectroscopy. The trends in core level lineshape and intensity with increasing metal coverage have been used to deduce an outline of the evolution and the final morphology of the interfacial region on a microscopic scale. Measurements were taken for Ytterbium (Yb) on Silicon (Si), Germanium, and Gallium Arsenide, and for Gadolinium (Gd) and Europium (Eu) on Silicon. The Yb/Si interface work was supported by comparable measurements of bulk Yb silicide samples of known composition and crystal structure. In a general sense, the behavior of all the systems studied is similar. At very low metal coverages, the metal atoms chemisorb and are weakly bonded to the substrate. The 4f core levels indicate that the metal-metal atom coordination is relatively low at this stage. The interaction with the substrate strengthens with increasing coverage, culminating in the formation of a strongly reacted phase at between 1 and 3 monolayers (ML). The strong reaction is limited to a narrow region at room temperature. At less than 10 ML coverage, the surface of the sample is almost indistinguishable from the pure metal. Details of the behavior such as the reactivity at low coverage, the compounds formed at the interface, the morphology at the surface at intermediate coverages, the final interfacial width, and the amount of substrate atom outdiffusion and surface segregation can all vary from system to system. It is in explaining the causes of some of these differences that insight about what governs the behavior of all of these rare earth metal/semiconductor systems has been obtained. The divalent metals (Yb, Eu) are significantly less reactive than trivalent Gd at sub-monolayer coverages. For the divalent metals the formation of a metal-rich phase is strongly favored in the reaction at the interface, whereas

  15. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  16. Role of direct electron-phonon coupling across metal-semiconductor interfaces in thermal transport via molecular dynamics

    SciTech Connect

    Lin, Keng-Hua; Strachan, Alejandro

    2015-07-21

    Motivated by significant interest in metal-semiconductor and metal-insulator interfaces and superlattices for energy conversion applications, we developed a molecular dynamics-based model that captures the thermal transport role of conduction electrons in metals and heat transport across these types of interface. Key features of our model, denoted eleDID (electronic version of dynamics with implicit degrees of freedom), are the natural description of interfaces and free surfaces and the ability to control the spatial extent of electron-phonon (e-ph) coupling. Non-local e-ph coupling enables the energy of conduction electrons to be transferred directly to the semiconductor/insulator phonons (as opposed to having to first couple to the phonons in the metal). We characterize the effect of the spatial e-ph coupling range on interface resistance by simulating heat transport through a metal-semiconductor interface to mimic the conditions of ultrafast laser heating experiments. Direct energy transfer from the conduction electrons to the semiconductor phonons not only decreases interfacial resistance but also increases the ballistic transport behavior in the semiconductor layer. These results provide new insight for experiments designed to characterize e-ph coupling and thermal transport at the metal-semiconductor/insulator interfaces.

  17. Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Yi, W.; Kaya, I. I.; Altfeder, I. B.; Appelbaum, I.; Chen, D. M.; Narayanamurti, V.

    2005-06-01

    Using a dual-probe scanning tunneling microscope, we have performed three-terminal ballistic electron emission spectroscopy on Au /GaAs(100) by contacting the patterned metallic thin film with one tip and injecting ballistic electrons with another tip. The collector current spectra agree with a Monte-Carlo simulation based on modified planar tunneling theory. Our results suggest that it is possible to study nanoscale metal-semiconductor interfaces without the requirement of an externally-contacted continuous metal thin film.

  18. Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

    NASA Astrophysics Data System (ADS)

    Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

    2015-12-01

    Electron doped SrTiO3, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO3 systems show reasonably strong rectification even when SrTiO3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlOx in between the metal and n-SrTiO3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO3) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO3. The non-linear permittivity of n-SrTiO3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.

  19. Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2002-01-01

    We study recently reported drain current Id-drain voltage Vd characteristics of a carbon nanotube metal semiconductor diode device with the gate voltage Vg applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative Vg blocked Id more effectively in the negative Vd region, resulting in the rectifying Id-Vd characteristics, and that (2) positive Vg allowed Id in the both Vd polarities, resulting in the non-rectifying characteristics. The negative Vd was the Schottky reverse direction, judging from the negligible Id behavior for a wide region of -4 V less than Vd less than 0 V, with Vg = -4 V. Such negative Vg would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (EF). With larger negative Vg, the experiment showed that the Schottky forward direction (Vd greater than 0) had a smaller turn-on voltage and the Schottky reverse direction (Vd less than 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when EF is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when EF is lowered.

  20. Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

    2014-06-01

    The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

  1. A Unique Ternary Semiconductor-(Semiconductor/Metal) Nano-Architecture for Efficient Photocatalytic Hydrogen Evolution.

    PubMed

    Zhuang, Tao-Tao; Liu, Yan; Sun, Meng; Jiang, Shen-Long; Zhang, Ming-Wen; Wang, Xin-Chen; Zhang, Qun; Jiang, Jun; Yu, Shu-Hong

    2015-09-21

    It has been a long-standing demand to design hetero-nanostructures for charge-flow steering in semiconductor systems. Multi-component nanocrystals exhibit multifunctional properties or synergistic performance, and are thus attractive materials for energy conversion, medical therapy, and photoelectric catalysis applications. Herein we report the design and synthesis of binary and ternary multi-node sheath hetero-nanorods in a sequential chemical transformation procedure. As verified by first-principles simulations, the conversion from type-I ZnS-CdS heterojunction into type-II ZnS-(CdS/metal) ensures well-steered collections of photo-generated electrons at the exposed ZnS nanorod stem and metal nanoparticles while holes at the CdS node sheaths, leading to substantially improved photocatalytic hydrogen-evolution performance. PMID:26276905

  2. Spinodal nanodecomposition in semiconductors doped with transition metals

    NASA Astrophysics Data System (ADS)

    Dietl, T.; Sato, K.; Fukushima, T.; Bonanni, A.; Jamet, M.; Barski, A.; Kuroda, S.; Tanaka, M.; Hai, Pham Nam; Katayama-Yoshida, H.

    2015-10-01

    This review presents the recent progress in computational materials design, experimental realization, and control methods of spinodal nanodecomposition under three- and two-dimensional crystal-growth conditions in spintronic materials, such as magnetically doped semiconductors. The computational description of nanodecomposition, performed by combining first-principles calculations with kinetic Monte Carlo simulations, is discussed together with extensive electron microscopy, synchrotron radiation, scanning probe, and ion beam methods that have been employed to visualize binodal and spinodal nanodecomposition (chemical phase separation) as well as nanoprecipitation (crystallographic phase separation) in a range of semiconductor compounds with a concentration of transition metal (TM) impurities beyond the solubility limit. The role of growth conditions, codoping by shallow impurities, kinetic barriers, and surface reactions in controlling the aggregation of magnetic cations is highlighted. According to theoretical simulations and experimental results the TM-rich regions appear in the form of either nanodots (the dairiseki phase) or nanocolumns (the konbu phase) buried in the host semiconductor. Particular attention is paid to Mn-doped group III arsenides and antimonides, TM-doped group III nitrides, Mn- and Fe-doped Ge, and Cr-doped group II chalcogenides, in which ferromagnetic features persisting up to above room temperature correlate with the presence of nanodecomposition and account for the application-relevant magneto-optical and magnetotransport properties of these compounds. Finally, it is pointed out that spinodal nanodecomposition can be viewed as a new class of bottom-up approach to nanofabrication.

  3. Thin-film transistors based on organic conjugated semiconductors

    NASA Astrophysics Data System (ADS)

    Garnier, Francis

    1998-02-01

    The use of organic semiconductors as active layers in thin-film transistors has raised in the recent years a large interest, both for the fundamental understanding of the charge transport processes in organic materials, and also for the potential applications of these devices in the new field of flexible electronics. Short conjugated oligomers have been shown to possess much higher field-effect mobilities than their parent conjugated polymers. The origin of such increase in the efficiency of charge transport is mainly attributed to the close-packing and long-range structural organization displayed in thin films of conjugated oligomers. The various routes for controlling this organization are described, which allow to realize liquid crystal-like two-dimensional structures for these semiconductors, whose carrier mobility has now become equivalent to that of amorphous silicon. It is also shown that the effect of conjugation length on carrier mobility is not as critical as previously thought, but the associated increase of the band gap energy effects the efficiency of charge injection at the metal/semiconductor interface. This problem can be answered by realizing a local doping of the semiconductor, which allows the injection of charge to operate through an efficient tunneling mechanism. Organic-based thin-film transistors have now become viable devices.

  4. Broadband terahertz generation using the semiconductor-metal transition in VO2

    NASA Astrophysics Data System (ADS)

    Charipar, Nicholas A.; Kim, Heungsoo; Mathews, Scott A.; Piqué, Alberto

    2016-01-01

    We report the design, fabrication, and characterization of broadband terahertz emitters based on the semiconductor-metal transition in thin film VO2 (vanadium dioxide). With the appropriate geometry, picosecond electrical pulses are generated by illuminating 120 nm thick VO2 with 280 fs pulses from a femtosecond laser. These ultrafast electrical pulses are used to drive a simple dipole antenna, generating broadband terahertz radiation.

  5. Stability of amorphous metal films on semiconductor substrates

    NASA Astrophysics Data System (ADS)

    Perepezko, J. H.; Wiley, J. D.

    In the culmination of work which began in June 1984, goals of this research have been as follows: Investigation of the stability of amorphous alloy films during diffusion and interdiffusion treatments. The atomic transport measurements will be conducted by a combination of RBS and AES techniques as explained in earlier reports. X-ray diffraction and transmission electron microscopy will be used for structural examination. Investigation of the electrical behavior of amorphous metal/semiconductor contacts, including both the interfacial electrical (Schottky barrier and Ohmic) behavior and the stability of the amorphous metallization against current-induced degradation by electromigration. Fundamental studies of the electromigration process itself will be conducted in this broader context. Examination of structural relaxation during post-depression annealing will also take place.

  6. Synthesis and catalytic properties of metal and semiconductor nanoclusters

    SciTech Connect

    Wilcoxon, J.P.; Martino, T.; Klavetter, E.; Sylwester, A.P.

    1993-08-01

    Synthesis of metal or semiconductor nanoclusters in microheterogeneous oil-continuous inverse micelle systems is discussed. We focus on synthesis and catalytic properties of palladium, iron, and iron sulfide nanoclusters. Cluster size-control is achieved by changing the micelle size which is determined by small angle neutron scattering (SANS) and chosen to produce cluster in size range of 1-20 nm. Cluster sizes were determined by either transmission electron microscopy (TEM) or small-angle x-ray scattering (SAXS). Cluster structure was determined by either x-ray or electron diffraction. In the case of Fe nanoclusters the crystal structure depended on the chemical nature of the surfactant micelle used in the synthesis, illustrating the important role of the surfactant during the growth process. Results of in-situ pyrene hydrogenation using size-selected Pd clusters show a significant increase in activity/total surface area as the size decreases. These clusters also proved effective as unsupported catalysts for direct coal hydropyrolysis, even at very low metal concentrations. Synthesis and optical features of a new semiconductor cluster material, FeS{sub 2}, is discussed with regard to its use in photocatalysis. Application of FeS{sub 2} in coal hydrogenolysis reactions has improved yields of short chain hydrocarbons significantly compared to conventional FeS{sub 2} powders.

  7. High-performance GaAs-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2014-10-01

    GaAs-based metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with Al2O3 gate oxide and in situ AlN passivation were investigated. Passivation with AlN improved the quality of the MOS interfaces, leading to good control of the gate. The devices had a sufficiently small subthreshold swing of 84 mV decade-1 in the drain current vs gate voltage curves, as well as negligible frequency dispersions and nearly zero hysteresis in the gate capacitance vs gate voltage curves. A maximum drain current of 630 mA/mm and a peak effective mobility of 6720 cm2 V-1 s-1 at a sheet carrier density of 3 × 1012 cm-2 were achieved.

  8. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    NASA Astrophysics Data System (ADS)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    This special cluster of Journal of Physics D: Applied Physics reports proceedings from the Frontiers in Semiconductor-Based Devices Symposium, held in honor of the 60th birthday of Professor Pallab Bhattacharya by his former doctoral students. The symposium took place at the University of Michigan, Ann Arbor on 6-7 December 2009. Pallab Bhattacharya has served on the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan, Ann Arbor for 25 years. During this time, he has made pioneering contributions to semiconductor epitaxy, characterization of strained heterostructures, self-organized quantum dots, quantum-dot optoelectronic devices, and integrated optoelectronics. Professor Bhattacharya has been recognized for his accomplishments by membership of the National Academy of Engineering, by chaired professorships (Charles M Vest Distinguished University Professor and James R Mellor Professor of Engineering), and by selection as a Fellow of the IEEE, among numerous other honors and awards. Professor Bhattacharya has also made remarkable contributions in education, including authorship of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition) and the production of 60 PhD students (and counting). In fact, this development of critical human resources is one of the biggest impacts of Professor Bhattacharya's career. His guidance and dedication have shaped the varied professional paths of his students, many of whom currently enjoy successful careers in academia, industry, and government around the world. This special cluster acknowledges the importance of Professor Bhattacharya's influence as all of the contributions are from his former doctoral students. The symposium reflects the significant impact of Professor Bhattacharya's research in that the topics span diverse, critical research areas, including: semiconductor lasers and modulators, nanoscale quantum structure-based devices, flexible CMOS-based

  9. Spin-based logic in semiconductors for reconfigurable large-scale circuits

    NASA Astrophysics Data System (ADS)

    Dery, H.; Dalal, P.; Cywiński, Ł.; Sham, L. J.

    2007-05-01

    Research in semiconductor spintronics aims to extend the scope of conventional electronics by using the spin degree of freedom of an electron in addition to its charge. Significant scientific advances in this area have been reported, such as the development of diluted ferromagnetic semiconductors, spin injection into semiconductors from ferromagnetic metals and discoveries of new physical phenomena involving electron spin. Yet no viable means of developing spintronics in semiconductors has been presented. Here we report a theoretical design that is a conceptual step forward-spin accumulation is used as the basis of a semiconductor computer circuit. Although the giant magnetoresistance effect in metals has already been commercially exploited, it does not extend to semiconductor/ferromagnet systems, because the effect is too weak for logic operations. We overcome this obstacle by using spin accumulation rather than spin flow. The basic element in our design is a logic gate that consists of a semiconductor structure with multiple magnetic contacts; this serves to perform fast and reprogrammable logic operations in a noisy, room-temperature environment. We then introduce a method to interconnect a large number of these gates to form a `spin computer'. As the shrinking of conventional complementary metal-oxide-semiconductor (CMOS) transistors reaches its intrinsic limit, greater computational capability will mean an increase in both circuit area and power dissipation. Our spin-based approach may provide wide margins for further scaling and also greater computational capability per gate.

  10. A model for the C-V characteristics of the metal-ferroelectric-insulator-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Zhang, Jun Jie; Sun, Jing; Zheng, Xue Jun

    2009-02-01

    A model is developed to describe the characteristics of the metal-ferroelectric-insulator-semiconductor (MFIS) structure based on the dipole switching theory (DST) and the silicon physics of metal-oxide-semiconductor (MOS) structure. The ferroelectric dipole distribution function is used to simulate the history-dependent electric field effect of the ferroelectric layer. Using the model, the thickness effects of the ferroelectric and insulator layers on the capacitance-voltage ( C-V) characteristic and the memory window were investigated for Pt/SBT/ZrO 2/Si and Pt/BLT/MgO/Si structures. All the simulation results show good agreement with the experimental results, indicating that the model is suitable for simulating the C-V characteristic and the memory window of MFIS structure. In addition, the mathematical description is simple and can be easily integrated into the electronic design automation (EDA) software for circuit simulation.

  11. Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2001-01-01

    We study recently reported drain current I(sub d)-drain voltage V(sub d) characteristics of a carbon nanotube metal-semiconductor diode device with the gate voltage V(sub g) applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative V(sub g) blocked I(sub d) more effectively in the negative V(sub d) region, resulting in the rectifying I(sub d)-V(sub d) characteristics, and that (2) positive V(sub g) allowed I(sub d) in the both V(sub d) polarities, resulting in the non-rectifying characteristics. The negative V(sub d) was the Schottky reverse direction, judging from the negligible I(sub d) behavior for a wide region of -4 V (is less than) V(sub d) (is less than) 0 V, with V(sub g) = -4 V. Such negative V(sub g) would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (E(sub F)). With larger negative V(sub g), the experiment showed that the Schottky forward direction (V(sub d) (is greater than) 0) had a smaller turn-on voltage and the Schottky reverse direction (V(sub d) (is less than) 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when E(sub F) is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when E(sub F) is lowered.

  12. Generalized Electron Counting in Determination of Metal-Induced Reconstruction of Compound Semiconductor Surfaces

    SciTech Connect

    Zhang, Lixin; Wang, E. G.; Xue, Qi-Kun; Zhang, S. B.; Zhang, Zhenyu

    2006-01-01

    Based on theoretical analysis, first-principles calculations, and experimental observations, we establish a generic guiding principle, embodied in generalized electron counting (GEC), that governs the surface reconstruction of compound semiconductors induced by different metal adsorbates. Within the GEC model, the adsorbates serve as an electron bath, donating or accepting the right number of electrons as the host surface chooses a specific reconstruction that obeys the classic electron-counting model. The predictive power of the GEC model is illustrated for a wide range of metal adsorbates.

  13. Progress in ion torrent semiconductor chip based sequencing.

    PubMed

    Merriman, Barry; Rothberg, Jonathan M

    2012-12-01

    In order for next-generation sequencing to become widely used as a diagnostic in the healthcare industry, sequencing instrumentation will need to be mass produced with a high degree of quality and economy. One way to achieve this is to recast DNA sequencing in a format that fully leverages the manufacturing base created for computer chips, complementary metal-oxide semiconductor chip fabrication, which is the current pinnacle of large scale, high quality, low-cost manufacturing of high technology. To achieve this, ideally the entire sensory apparatus of the sequencer would be embodied in a standard semiconductor chip, manufactured in the same fab facilities used for logic and memory chips. Recently, such a sequencing chip, and the associated sequencing platform, has been developed and commercialized by Ion Torrent, a division of Life Technologies, Inc. Here we provide an overview of this semiconductor chip based sequencing technology, and summarize the progress made since its commercial introduction. We described in detail the progress in chip scaling, sequencing throughput, read length, and accuracy. We also summarize the enhancements in the associated platform, including sample preparation, data processing, and engagement of the broader development community through open source and crowdsourcing initiatives. PMID:23208921

  14. Nonlinear optical properties of metal and semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Whelan, Aine M.; Benrezzak, Sakina; Brennan, Margaret E.; Kelly, John M.; Blau, Werner J.

    2003-03-01

    The synthesis of metal (Au,Ag) and semiconductor (PbS) nanoparticles of specific morphology and shape is reported. The shape of PbS nanoparticles has been varied from spherical to oval to cubic, by use of poly(vinyl alcohol) (PVA), DNA and ethylene glycol as stabilisers respectively. For the first time, a seeding method has been used to successfully prepare PVA stabilised gold and silver nanoparticles. Characterisation of the third order optical nonlinearity of the nanoparticles has been carried out using the Z-scan technique with values of Im ÷ (3) as large as 10-10. Modulation of the magnitude of the nonlinear optical response with morphology in the case of the PbS nanoparticles is presented.

  15. Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals

    SciTech Connect

    Brenny, B. J. M.; Coenen, T.; Polman, A.

    2014-06-28

    We present a method to separate coherent and incoherent contributions to cathodoluminescence from bulk materials by using angle-resolved cathodoluminescence spectroscopy. Using 5 and 30 keV electrons, we measure the cathodoluminescence spectra for Si, GaAs, Al, Ag, Au, and Cu and determine the angular emission distributions for Al, GaAs, and Si. Aluminium shows a clear dipolar radiation profile due to coherent transition radiation, while GaAs shows incoherent luminescence characterized by a Lambertian angular distribution. Silicon shows both transition radiation and incoherent radiation. From the angular data, we determine the ratio between the two processes and decompose their spectra. This method provides a powerful way to separate different radiative cathodoluminescence processes, which is useful for material characterization and in studies of electron- and light-matter interaction in metals and semiconductors.

  16. Tunnel based spin injection devices for semiconductor spintronics

    NASA Astrophysics Data System (ADS)

    Jiang, Xin

    This dissertation summarizes the work on spin-dependent electron transport and spin injection in tunnel based spintronic devices. In particular, it focuses on a novel three terminal hot electron device combining ferromagnetic metals and semiconductors---the magnetic tunnel transistor (MTT). The MTT has extremely high magnetic field sensitivity and is a useful tool to explore spin-dependent electron transport in metals, semiconductors, and at their interfaces over a wide energy range. In Chap. 1, the basic concept and fabrication of the MTT are discussed. Two types of MTTs, with ferromagnetic single and spin-valve base layers, respectively, are introduced and compared. In the following chapters, the transport properties of the MTT are discussed in detail, including the spin-dependent hot electron attenuation lengths in CoFe and NiFe thin films on GaAs (Chap. 2), the bias voltage dependence of the magneto-current (Chap. 3), the giant magneto-current effect in MTTs with a spin-valve base (Chap. 4), and the influence of non-magnetic seed layers on magneto-electronic properties of MTTs with a Si collector (Chap. 5). Chap. 6 concentrates on electrical injection of spin-polarized electrons into semiconductors, which is an essential ingredient in semiconductor spintronics. Two types of spin injectors are discussed: an MTT injector and a CoFe/MgO tunnel injector. The spin polarization of the injected electron current is detected optically by measuring the circular polarization of electroluminescence from a quantum well light emitting diode. Using an MTT injector a spin polarization of ˜10% is found for injection electron energy of ˜2 eV at 1.4K. This moderate spin polarization is most likely limited by significant electron spin relaxation at high energy. Much higher spin injection efficiency is obtained by using a CoFe/MgO tunnel injector with spin polarization values of ˜50% at 100K. The temperature and bias dependence of the electroluminescence polarization provides

  17. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  18. High-speed, efficient metal - semiconductor - metal photodetectors

    SciTech Connect

    Collin, St; Pardo, F; Bardou, N; Pelouard, J.-L.; Averin, S V

    2010-08-03

    Design principles and the fabrication technique of highly efficient, high-speed photodetectors based on MSM nanostructures are developed. To efficiently confine light in the region of the strong field as well as to decrease light losses due to reflection from the diode contacts, use is made of a nanoscale interdigital diffraction grating and a multilayer Bragg grating. Measurements of the reflection coefficients and the quantum efficiency for a multilayer structure are in good agreement with theoretical estimates. A record-high quantum efficiency (QE = 46 %) is obtained for high speed MSM photodetectors. The detector has a high spectral selectivity ({Delta}{lambda}{sub 1/2} = 17 nm) at a wavelength of 800 nm. Taking into account the diode capacitance and the drift time of photogenerated carriers, the performance of the detectors under study is {approx} 500 GHz. The low level of the dark current density in the structures under study (j={sup 1} pA {mu}m{sup -2}) makes it possible to realise on their basis highly sensitive, high-speed selective detectors of optical radiation.

  19. Characterization of silicon carbide metal oxide semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Marinella, Matthew J.

    Only a few years after the invention of the transistor, William Shockley considered silicon carbide (SiC) an excellent material for high temperature semiconductor devices. Over a half century later, SiC technology is nearly mature enough that it may be considered for use in commercial electronic devices. Furthermore, since SiC has the ability to grow thermal silicon dioxide, significant research has been directed toward the creation of a commercial SiC metal oxide semiconductor field effect transistor (MOSFET). However, a number of significant hurdles still must be overcome before SiC devices can become commercially competitive, including the relatively high cost and low quality of materials. Another significant problem is the lack of understanding of factors which limit the minority carrier lifetime. The primary purpose of this work was to use the pulsed metal oxide semiconductor capacitor (MOS-C) technique to measure generation lifetime in SiC materials. It was found that many nonidealities corrupt the results obtained by this technique. One very interesting nonideality was negative bias temperature instability (NBTI), which has also been widely studied by the silicon industry in recent years. Methods to understand and minimize the effect of these nonidealities were developed. Furthermore, these methods allowed for further study of the oxide properties, such as leakage current. Even after accounting for nonidealities, generation lifetimes showed several peculiarities, such as a variation of as much as a factor of 1000 within a square cm area. In addition, the ratio of generation to recombination lifetime is less than unity, which is not predicted by classic theory, nor typically observed in silicon devices. Possible explanations are put forth to explain these observations. In addition, to further investigate these abnormalities, Schottky diodes were fabricated and characterized. When applied to the SiC MOS capacitor, the pulsed MOS-C technique involves

  20. Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits.

    PubMed

    Hong, Seul Ki; Kim, Choong Sun; Hwang, Wan Sik; Cho, Byung Jin

    2016-07-26

    We demonstrate a hybrid integration of a graphene-based analog circuit and a silicon-based digital circuit in order to exploit the strengths of both graphene and silicon devices. This mixed signal circuit integration was achieved using a three-dimensional (3-D) integration technique where a graphene FET multimode phase shifter is fabricated on top of a silicon complementary metal-oxide-semiconductor field-effect transistor (CMOS FET) ring oscillator. The process integration scheme presented here is compatible with the conventional silicon CMOS process, and thus the graphene circuit can successfully be integrated on current semiconductor technology platforms for various applications. This 3-D integration technique allows us to take advantage of graphene's excellent inherent properties and the maturity of current silicon CMOS technology for future electronics. PMID:27403730

  1. Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.

    PubMed

    Hsieh, Chin-Hua; Chang, Mu-Tung; Chien, Yu-Jen; Chou, Li-Jen; Chen, Lih-Juann; Chen, Chii-Dong

    2008-10-01

    Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices. PMID:18778107

  2. Photocatalytic Reactive Oxygen Species Formation by Semiconductor-Metal Hybrid Nanoparticles. Toward Light-Induced Modulation of Biological Processes.

    PubMed

    Waiskopf, Nir; Ben-Shahar, Yuval; Galchenko, Michael; Carmel, Inbal; Moshitzky, Gilli; Soreq, Hermona; Banin, Uri

    2016-07-13

    Semiconductor-metal hybrid nanoparticles manifest efficient light-induced spatial charge separation at the semiconductor-metal interface, as demonstrated by their use for hydrogen generation via water splitting. Here, we pioneer a study of their functionality as efficient photocatalysts for the formation of reactive oxygen species. We observed enhanced photocatalytic activity forming hydrogen peroxide, superoxide, and hydroxyl radicals upon light excitation, which was significantly larger than that of the semiconductor nanocrystals, attributed to the charge separation and the catalytic function of the metal tip. We used this photocatalytic functionality for modulating the enzymatic activity of horseradish peroxidase as a model system, demonstrating the potential use of hybrid nanoparticles as active agents for controlling biological processes through illumination. The capability to produce reactive oxygen species by illumination on-demand enhances the available peroxidase-based tools for research and opens the path for studying biological processes at high spatiotemporal resolution, laying the foundation for developing novel therapeutic approaches. PMID:27224678

  3. Plasmonically-enhanced mid-infrared photoluminescence in a metal/narrow-gap semiconductor structure

    NASA Astrophysics Data System (ADS)

    Lu, Pengqi; Cai, Chunfeng; Zhang, Bingpo; Liu, Bozhi; Wu, Huizhen; Bi, Gang; Si, Jianxiao

    2016-05-01

    We report the enhancement of the mid-infrared (MIR) luminescence intensity in a nanoscale metal/semiconductor structure by the coupling of surface plasmon polaritons (SPPs) with excitons in a narrow-gap semiconductor. The SPPs are efficiently excited by the total internal reflection photons at a metal/semiconductor interface. The intense electric field induced by SPPs, in turn, greatly changes the radiative recombination rates of the excitons generated by the pumping laser and thus the MIR luminescence intensity. The finding avails the understanding of fundamental science of SPs in narrow-gap semiconductors and the development of novel MIR devices.

  4. Electrode dependent interfacial layer variation in metal-oxide-semiconductor capacitor

    NASA Astrophysics Data System (ADS)

    Park, I.-S.; Jung, Y. C.; Lee, M.; Seong, S.; Ahn, J.

    2014-03-01

    The interfacial layer between oxide and semiconductor in metal-oxide-semiconductor (MOS) capacitors depends on the metal electrode material. The metal/HfO2/Si and metal/HfO2/Ge capacitor were made using an atomic layer deposited HfO2 dielectric films and Mo, Ru, and Pt electrodes above Si substrate and Ti, Ru, and Pt electrodes above Ge substrate. The measured saturation capacitance was varied with electrode and evaluated to capacitance equivalent thickness (CET). In Si-based MOS capacitor, the CET value of the capacitor with Pt electrode is larger than those with Mo and Ru electrode. In addition, the CET is 27.4 A, 38.2 A, and 30.8 A for Ti, Ru, and Pt electrode, respectively, for Ge-based MOS capacitors. The CET variation with electrode is attributed the variation of dielectric constant of HfO2 dielectric and the difference of interfacial layer. The CET variation is well in agreement with the interfacial layer thickness taken by a transmission electron microscopy. The thickness variation of interfacial layer results from the oxygen gettering ability of the electrode even though they are apart.

  5. Multiple percolation tunneling staircase in metal-semiconductor nanoparticle composites

    SciTech Connect

    Mukherjee, Rupam; Huang, Zhi-Feng; Nadgorny, Boris

    2014-10-27

    Multiple percolation transitions are observed in a binary system of RuO{sub 2}-CaCu{sub 3}Ti{sub 4}O{sub 12} metal-semiconductor nanoparticle composites near percolation thresholds. Apart from a classical percolation transition, associated with the appearance of a continuous conductance path through RuO{sub 2} metal oxide nanoparticles, at least two additional tunneling percolation transitions are detected in this composite system. Such behavior is consistent with the recently emerged picture of a quantum conductivity staircase, which predicts several percolation tunneling thresholds in a system with a hierarchy of local tunneling conductance, due to various degrees of proximity of adjacent conducting particles distributed in an insulating matrix. Here, we investigate a different type of percolation tunneling staircase, associated with a more complex conductive and insulating particle microstructure of two types of non-spherical constituents. As tunneling is strongly temperature dependent, we use variable temperature measurements to emphasize the hierarchical nature of consecutive tunneling transitions. The critical exponents corresponding to specific tunneling percolation thresholds are found to be nonuniversal and temperature dependent.

  6. Simulation of Submicronmeter Metal-Semiconductor-Metal Ultraviolet Photodiodes no Gallium Nitride

    SciTech Connect

    Li, J.; Donaldson, W.R.; Hsiang, T.Y.

    2004-09-15

    Ultrafast metal Semiconductor metal ultraviolet photodetectors on GaN with 0.3-mm finger width and spacing were fabricated and packaged with a specially designed fast circuit. The assembly was simulated using a distributed circuit approach with optical illumination at l = 270 nm. This is the first theoretical simulation report of this effect in ultrafast ultraviolet photodetectors on GaN. Comparison of simulations and measurements was made in a wide range of optical energies, and a close agreement was achieved with a single energy-scaling factor.

  7. Unusual nonlinear current-voltage characteristics of a metal-intrinsic semiconductor-metal barrierless structure

    NASA Astrophysics Data System (ADS)

    Meriuts, A. V.; Gurevich, Yu. G.

    2015-03-01

    A nonlinear model for the electric current in a metal-intrinsic semiconductor-metal structure without potential barriers in contacts is considered using a drift diffusion approach. An analytical solution of the continuity equations and the current-voltage characteristic for various recombination rates in the contacts are obtained. It is shown that the current-voltage characteristics of such a structure exhibit not only linear behavior, corresponding to Ohm's law, but may also possess properties of current-voltage characteristics of the rectifier diode. It is also possible current-voltage characteristics with saturation in both forward and backward directions. Physical model that explains the obtained results is proposed.

  8. Analysis of aluminum nano-gratings assisted light reflection reduction in GaAs metal-semiconductor-metal photodetectors

    NASA Astrophysics Data System (ADS)

    Fan, Zhenzhu; Su, Yahui; Zhang, Huayong; Han, Xiaohu; Ren, Feifei

    2015-09-01

    Plasmonics-based GaAs metal-semiconductor-metal photodetector (MSM-PD) with aluminum nano-gratings was proposed. A detailed numerical study of subwavelength nanogratings behavior to reduce the light reflection is performed by finite-difference time domain (FDTD) algorithm. The geometric parameters of nano-gratings, such as aperture width, the nano-gratings height, the duty cycles are optimized for subwavelength metal nanogratings on GaAs substrate and their impact on light reflection below the conventional MSM-PD is confirmed. Simulation results show that a light reflection factor around 15% can be obtained near the wavelength of 900 nm with optimized MSM-PDs, and in visible light spectrum, the Al nano-gratings show better performance than Au nano-gratings.

  9. Electrical properties of hybrid (ferromagnetic metal)-(layered semiconductor) Ni/p-GaSe structures

    SciTech Connect

    Bakhtinov, A. P. Vodopyanov, V. N.; Kovalyuk, Z. D.; Netyaga, V. V.; Lytvyn, O. S.

    2010-02-15

    Two-barrier Ni/n-Ga2Se3/p-GaSe structures with nanoscale Ni-alloy grains caused by reactions at the 'metal-layered semiconductor' interface were formed after growing Ni layers on the p-GaSe (0001) surface. Current-voltage and capacitance-voltage characteristics of hybrid structures were studied in the temperature range of 220-350 K. The dependence of the impedance spectra on the bias voltage was studied at various temperatures. The frequency dependences of the impedance at high frequencies (f = 10{sup 6} Hz) are discussed in terms of the phenomena of spin injection and extraction in structures with an ultrathin spin-selective Ni/n-Ga{sub 2}Se{sub 3} barrier and the effects of spin diffusion and relaxation in the semiconductor substrate. The room-temperature phenomena of the Coulomb blockade and negative differential capacitance were detected. These phenomena are explained based on an analysis of transport processes in a narrow region near the 'ferromagnetic metal-semiconductor' interface, where nanoscale grains are arranged.

  10. Optical switches based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kalman, Robert F.; Dias, Antonio R.; Chau, Kelvin K.; Goodman, Joseph W.

    1991-12-01

    Fiber-optic switching systems typically exhibit large losses associated with splitting and combining of the optical power, and with excess component losses. These losses increase quickly with switch size. To obtain acceptable signal-to-noise performance through large optical switching, optical amplifiers can be used. In applications requiring optical switching, semiconductor optical amplifiers (SOAs) are preferred over erbium-doped fiber amplifiers due to their fast switching speeds and the possibility of their integration in monolithic structures with passive waveguides and electronics. We present a general analysis of optical switching systems utilizing SOAs. These systems, in which the gain provided by SOAs is distributed throughout the optical system, are referred to as distributed optical gain (DOG) systems. Our model predicts the performance and achievable sizes of switches based on the matrix-vector multiplier crossbar and Benes network. It is found that for realistic SOA parameters optical switches accommodating extremely large numbers of nodes are, in principle, achievable.

  11. Semiconductor-Nanowire-Based Superconducting Qubit.

    PubMed

    Larsen, T W; Petersson, K D; Kuemmeth, F; Jespersen, T S; Krogstrup, P; Nygård, J; Marcus, C M

    2015-09-18

    We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (~0.8 μs) and dephasing times (~1 μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information. PMID:26431009

  12. Adjustable metal-semiconductor transition of FeS thin films by thermal annealing

    SciTech Connect

    Fu Ganhua; Polity, Angelika; Volbers, Niklas; Meyer, Bruno K.; Mogwitz, Boris; Janek, Juergen

    2006-12-25

    FeS polycrystalline thin films were prepared on float glass at 500 deg. C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360 to 600 deg. C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.

  13. Electrical properties of GaN-based metal-insulator-semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

    NASA Astrophysics Data System (ADS)

    Kubo, Toshiharu; Freedsman, Joseph J.; Iwata, Yasuhiro; Egawa, Takashi

    2014-04-01

    Al2O3 deposited by atomic layer deposition (ALD) was used as an insulator in metal-insulator-semiconductor (MIS) structures for GaN-based MIS-devices. As the oxygen precursors for the ALD process, water (H2O), ozone (O3), and both H2O and O3 were used. The chemical characteristics of the ALD-Al2O3 surfaces were investigated by x-ray photoelectron spectroscopy. After fabrication of MIS-diodes and MIS-high-electron-mobility transistors (MIS-HEMTs) with the ALD-Al2O3, their electrical properties were evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The threshold voltage of the C-V curves for MIS-diodes indicated that the fixed charge in the Al2O3 layer is decreased when using both H2O and O3 as the oxygen precursors. Furthermore, MIS-HEMTs with the H2O + O3-based Al2O3 showed good dc I-V characteristics without post-deposition annealing of the ALD-Al2O3, and the drain leakage current in the off-state region was suppressed by seven orders of magnitude.

  14. Surface enhanced Raman spectroscopic studies of the metal-semiconductor interface in organic field effect transistors

    NASA Astrophysics Data System (ADS)

    Adil, Danish; Guha, Suchi

    2012-02-01

    The performance of organic field-effect transistors (FETs) largely depends on the nature of interfaces of dissimilar materials. Metal-semiconductor interfaces, in particular, play a critical role in the charge injection process. Here, Raman spectroscopy is used to investigate the nature of the Au-semiconductor interface in pentacene based FETs. A large enhancement in the Raman intensity (SERS) is observed from the pentacene film under the Au layer. The enhancement is evidence of a nano-scale roughness in the morphology of the interface, which is further confirmed by electron microscopy images. The morphology of the interface is investigated by SERS as a function of the pentacene layer thickness and the Au layer thickness. The Raman spectra are found to be extremely sensitive in detecting small changes in the morphology of the interface in the sub-nanometer range. Changes in the Raman spectra are further tracked after biasing and ageing the devices. Evolution of these Raman spectra is correlated with degradation in device performance. Finally, FETs based on other donor-acceptor semiconductors are probed by Raman scattering and contrasted with those of the pentacene-based devices.

  15. Factors for the polarization lifetime in metal-ferroelectric-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Xiao, Y. G.; Xiong, Y.; Tang, M. H.; Li, J. C.; Gu, X. C.; Cheng, C. P.; Jiang, B.; Tang, Z. H.; Lv, X. S.; Cai, H. Q.; He, J.

    2012-07-01

    Depolarization field in metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with a ferroelectric-electrode interface layer was derived theoretically in this work. The polarization relaxation characteristics were investigated in details based on Lou's polarization retention model. It is found that the retention time of ferroelectric field-effect transistors (FETs) can be affected significantly by the dielectric constant and the thickness of ferroelectric thin film, and by the interface layer thickness. The results may provide some insights into the design and the retention property improvement of MFIS-FET as nonvolatile memory.

  16. Metal-oxide-semiconductor field effect transistor humidity sensor using surface conductance

    NASA Astrophysics Data System (ADS)

    Song, Seok-Ho; Yang, Hyun-Ho; Han, Chang-Hoon; Ko, Seung-Deok; Lee, Seok-Hee; Yoon, Jun-Bo

    2012-03-01

    This letter presents a metal-oxide-semiconductor field effect transistor based humidity sensor which does not use any specific materials to sense the relative humidity. We simply make use of the low pressure chemical vapor deposited (LPCVD) silicon dioxide's surface conductance change. When the gate is biased and then floated, the electrical charge in the gate is dissipated through the LPCVD silicon dioxide's surface to the surrounding ground with a time constant depending on the surface conductance which, in turn, varies with humidity. With this method, extremely high sensitivity was achieved—the charge dissipation speed increased thousand times as the relative humidity increased.

  17. Growth and characterization of metal/semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Henz, J.; Ospelt, M.; Von Känel, H.

    1989-04-01

    Thanks to recent advances in the growth of CoSi 2-layers on Si(111) it has become possible for the first time to fabricate metal/semiconductor superlattices. This is achieved by a combination of solid phase epitaxy (SPE) and molecular beam epitaxy (MBE). We briefly explain the growth of thin ( < 100 Å) type B oriented (i.e. rotated by 180° with respect to the substrate) CoSi 2 layers. We show the effect of the two different surface structures of CoSi 2 on the morphology of the films. Silicon with a reasonable crystal quality can be grown on top of CoSi 2 by using low substrate temperatures for the first few monolayers of growth. We always find the orientation of Si to be the same as the one of the underlying suicide, when the latter is of high quality. Superlattices of CoSi 2 and Si have two periods, one being given by the different materials and the other by the alternating crystal orientations. We show some TEM cross section images as well as first X-ray investigations of these structures.

  18. Defect-induced semiconductor to metal transition in graphene monoxide.

    PubMed

    Woo, Jungwook; Yun, Kyung-Han; Cho, Sung Beom; Chung, Yong-Chae

    2014-07-14

    This study investigates the influence of point defects on the geometric and electronic structure of graphene monoxide (GMO) via density functional theory calculations. In aspects of defect formation energy, GMOs with oxygen vacancies and bridge interstitial defects are more likely to form when compared to GMOs with defects such as carbon vacancies and hollow interstitial defects. It was also found that the oxygen vacancy or the hollow interstitial defect induces local tensile strain around the defective site and this strain increases the band gap energy of the defective GMO. In addition, the band gaps of GMO with carbon vacancies or bridge interstitial defects decreased mainly due to the dangling bonds, not due to the strain effect. It is noted that the dangling bond derived from the defects forms the defect-level in the band gap of GMO. The semiconductor to metal transition by the band gap change (0-0.7 eV) implies the possibility for band gap engineering of GMO by vacancies and interstitial defects. PMID:24886723

  19. Nanostructured target fabrication with metal and semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Barberio, M.; Antici, P.

    2015-10-01

    The development of ultra-intense high-energy (≫1 J) short (<1 ps) laser pulses in the last decade has enabled the acceleration of high-energy short-pulse proton beams. A key parameter for enhancing the acceleration regime is the laser-to-target absorption, which heavily depends on the target structure and material. In this work, we present the realization of a nanostructured target with a sub-laser wavelength nano-layer in the front surface as a possible candidate for improving the absorption. The nanostructured film was realized by a simpler and cheaper method than using conventional lithographic techniques: A colloidal solution of metallic or semiconductor nanoparticles (NPs) was produced by laser ablation and, after a heating and sonication process, was spray-dried on the front surface of an aluminum target. The obtained nanostructured film with a thickness of 1 μm appears, at morphological and chemical analysis, uniformly nanostructured and distributed on the target surface without the presence of oxides or external contaminants. Finally, the size of the NPs can be tuned from tens to hundreds of nanometers simply by varying the growth parameters (i.e., irradiation time, fluence, and laser beam energy).

  20. Molecular Dynamics Modeling of Heat Transport in Metals and Semiconductors

    SciTech Connect

    Narumanchi, S.; Kim, K.

    2010-01-01

    Interfacial thermal transport is of great importance in a number of practical applications where interfacial resistance between layers is frequently a major bottleneck to effective heat dissipation. For example, efficient heat transfer at silicon/aluminum and silicon/copper interfaces is very critical in power electronics packages used in hybrid electric vehicle applications. It is therefore important to understand the factors that govern and impact thermal transport at semiconductor/metal interfaces. Hence, in this study, we use classical molecular dynamics modeling to understand and study thermal transport in silicon and aluminum, and some preliminary modeling to study thermal transport at the interface between silicon and aluminum. A good match is shown between our modeling results for thermal conductivity in silicon and aluminum and the experimental data. The modeling results from this study also match well with relevant numerical studies in the literature for thermal conductivity. In addition, preliminary modeling results indicate that the interfacial thermal conductance for a perfect silicon/aluminum interface is of the same order as experimental data in the literature as well as diffuse mismatch model results accounting for realistic phonon dispersion curves.

  1. Fabrication of Metal-Semiconductor Heterostructures in Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Luyun

    The increasing demand for fossil fuels and the need to reduce greenhouse gases require clean energy sources and more efficient utilization of energy. Thermoelectric materials provide a means toward achieving these goals since they convert heat, including waste heat, directly into an electric potential difference. Metal-semiconductor heterostructures can work as Schottky barriers in thermoelectric materials to increase thermoelectric efficiency. In this project, nickel silicide phases were introduced into silicon nanowires (SiNWs) to build up the Schottky barrier. SiNW arrays were fabricated using a metal-assisted chemical process, creating SiNWs about 200 nm in diameter and 30im in length. Different methods were adopted for nickel deposition: electroless nickel deposition, electro nickel deposition, E-beam deposition, and thermal evaporation. The samples were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that depositing nickel on SiNWs in an aqueous solution without electricity is a simple way to deposit nickel particles, and the morphology of nickel particles depends on the concentration of the deposition bath. However, an aqueous solution will cause oxidation of the SiNWs and hinder the formation of nickel silicide. To solve this problem, depositing nickel on SiNWs in organic solutions inside an oxygen-free glove box is a way to prevent oxidation, and nickel can diffuse into silicon substrates easily via annealing when there no oxidation layer on the surface of SiNWs. The dominant phase formed in these samples is NiSi2 after being annealed at 650°C for one hour in a tube furnace.

  2. General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green's function

    NASA Astrophysics Data System (ADS)

    Stradi, Daniele; Martinez, Umberto; Blom, Anders; Brandbyge, Mads; Stokbro, Kurt

    2016-04-01

    Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex physics governing their operating principles. Here we introduce an atomistic approach based on density functional theory and nonequilibrium Green's function, which includes all the relevant ingredients required to model realistic metal-semiconductor interfaces and allows for a direct comparison between theory and experiments via I -Vbias curve simulations. We apply this method to characterize an Ag/Si interface relevant for photovoltaic applications and study the rectifying-to-Ohmic transition as a function of the semiconductor doping. We also demonstrate that the standard "activation energy" method for the analysis of I -Vbias data might be inaccurate for nonideal interfaces as it neglects electron tunneling, and that finite-size atomistic models have problems in describing these interfaces in the presence of doping due to a poor representation of space-charge effects. Conversely, the present method deals effectively with both issues, thus representing a valid alternative to conventional procedures for the accurate characterization of metal-semiconductor interfaces.

  3. Cytotoxicity of metal and semiconductor nanoparticles indicated by cellular micromotility.

    PubMed

    Tarantola, Marco; Schneider, David; Sunnick, Eva; Adam, Holger; Pierrat, Sebastien; Rosman, Christina; Breus, Vladimir; Sönnichsen, Carsten; Basché, Thomas; Wegener, Joachim; Janshoff, Andreas

    2009-01-27

    In the growing field of nanotechnology, there is an urgent need to sensitively determine the toxicity of nanoparticles since many technical and medical applications are based on controlled exposure to particles, that is, as contrast agents or for drug delivery. Before the in vivo implementation, in vitro cell experiments are required to achieve a detailed knowledge of toxicity and biodegradation as a function of the nanoparticles' physical and chemical properties. In this study, we show that the micromotility of animal cells as monitored by electrical cell-substrate impedance analysis (ECIS) is highly suitable to quantify in vitro cytotoxicity of semiconductor quantum dots and gold nanorods. The method is validated by conventional cytotoxicity testing and accompanied by fluorescence and dark-field microscopy to visualize changes in the cytoskeleton integrity and to determine the location of the particles within the cell. PMID:19206269

  4. Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

    SciTech Connect

    Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Ostermaier, C.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.

    2014-07-21

    The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔV{sub th}, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness t{sub D} and barrier thickness t{sub B}, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔN{sub it}, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔN{sub it} is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

  5. Thermoelectric properties of HfN/ScN metal/semiconductor superlattices: a first-principles study

    NASA Astrophysics Data System (ADS)

    Saha, Bivas; Sands, Timothy D.; Waghmare, Umesh V.

    2012-10-01

    Nitride-based metal/semiconductor superlattices are promising candidates for high-temperature thermoelectric applications. Motivated by recent experimental studies, we perform first-principles density functional theory based analysis of electronic structure, vibrational spectra and transport properties of HfN/ScN metal/semiconductor superlattices for their potential applications in thermoelectric and thermionic energy conversion devices. Our results suggest (a) an asymmetric linearly increasing density of states and (b) flattening of conduction bands along the cross-plane Γ-Z direction near the Fermi energy of these superlattices, as is desirable for a large power factor. The n-type Schottky barrier height of 0.13 eV at the metal/semiconductor interface is estimated by the microscopic averaging technique of the electrostatic potential. Vibrational spectra of these superlattices show softening of transverse acoustic phonon modes and localization of ScN phonons in the vibrational energy gap between the HfN (metal) and ScN (semiconductor) states. Our estimates of lattice thermal conductivity within the Boltzmann transport theory suggests up to two orders of magnitude reduction in the cross-plane lattice thermal conductivity of these superlattices compared to their individual bulk components.

  6. Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

    SciTech Connect

    Morshed, Muhammad M.; Suja, Mohammad; Zuo, Zheng; Liu, Jianlin

    2014-11-24

    Nitrogen-doped Mg{sub 0.12}Zn{sub 0.88}O nanocrystalline thin film was grown on c-plane sapphire substrate. Asymmetric Ni/Au and Ti/Au Schottky contacts and symmetric Ni/Au contacts were deposited on the thin film to form metal-semiconductor-metal (MSM) laser devices. Current-voltage, photocurrent, and electroluminescence characterizations were performed. Evident random lasing with a threshold current of ∼36 mA is demonstrated only from the asymmetric MSM device. Random lasing peaks are mostly distributed between 340 and 360 nm and an output power of 15 nW is measured at 43 mA injection current. The electron affinity difference between the contact metal and Mg{sub 0.12}Zn{sub 0.88}O:N layer plays an important role for electron and hole injection and subsequent stimulated random lasing.

  7. Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Orrù, Marta; Piazza, Vincenzo; Rubini, Silvia; Roddaro, Stefano

    2015-10-01

    Semiconductor nanowires have emerged as an important enabling technology and are today used in many advanced device architectures, with an impact both for what concerns fundamental science and in view of future applications. One of the key challenges in the development of nanowire-based devices is the fabrication of reliable nanoscale contacts. Recent developments in the creation of metal-semiconductor junctions by thermal annealing of metallic electrodes offer promising perspectives. Here, we analyze the optoelectronic properties of nano-Schottky barriers obtained thanks to the controlled formation of metallic AuGa regions in GaAs nanowire. The junctions display a rectifying behavior and their transport characteristics are analyzed to extract the average ideality factor and barrier height in the current architecture. The presence, location, and properties of the Schottky junctions are cross-correlated with spatially resolved photocurrent measurements. Broadband light emission is reported in the reverse breakdown regime; this observation, combined with the absence of electroluminescence at forward bias, is consistent with the device unipolar nature.

  8. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

    PubMed Central

    Gu, Haoshuang; Wang, Zhao; Hu, Yongming

    2012-01-01

    Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors. PMID:22778599

  9. GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

    NASA Astrophysics Data System (ADS)

    Lee, Chang-Ju; Kang, Sang-Bum; Cha, Hyeon-Gu; Won, Chul-Ho; Hong, Seul-Ki; Cho, Byung-Jin; Park, Hongsik; Lee, Jung-Hee; Hahm, Sung-Ho

    2015-06-01

    We fabricated a GaN-based metal-semiconductor-metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes. The fabricated GaN MSM UV sensor showed a high photo-to-dark current contrast ratio of 3.9 × 105 and a UV-to-visible rejection ratio of 1.8 × 103 at 7 V. The as-fabricated GaN MSM UV sensor with graphene electrodes has a low bias dependence of maximum photoresponsivity and a noise-like response at a visible wavelength in the 500 nm region. These problems were successfully solved by treatment with a buffered oxide etcher (BOE), and the photoresponse characteristics of the fabricated GaN MSM UV sensor after the treatment were better than those before the treatment.

  10. Metallization and packaging of compound semiconductor devices at Sandia National Laboratories

    SciTech Connect

    Seigal, P.K.; Armendariz, M.G.; Rieger, D.J.; Lear, K.L.; Sullivan, C.T.

    1996-11-01

    Recent advances in compound semiconductor technology utilize a variety of metal thin films fabricated by thermal and electron-beam evaporation, and electroplating. An overview of metal processes used by Sandia`s Compound Semiconductor Research Laboratory is presented. Descriptions of electrical n-type and p-type ohmic contact alloys, interconnect metal, and metal layers specifically included for packaging requirements are addressed. Several illustrations of devices incorporating gold plated air bridges are included. ``Back-end`` processes such as flip-chip under bump metallurgy with fluxless solder reflow and plated solder processes are mentioned as current research areas.