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Sample records for beam sputtering method

  1. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, Donald J.

    1988-01-01

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  2. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, D.J.

    1986-03-25

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  3. Ion beam sputter target and method of manufacture

    SciTech Connect

    Higdon, Clifton; Elmoursi, Alaa A.; Goldsmith, Jason; Cook, Bruce; Blau, Peter; Jun, Qu; Milner, Robert

    2014-09-02

    A target for use in an ion beam sputtering apparatus made of at least two target tiles where at least two of the target tiles are made of different chemical compositions and are mounted on a main tile and geometrically arranged on the main tile to yield a desired chemical composition on a sputtered substrate. In an alternate embodiment, the tiles are of varied thickness according to the desired chemical properties of the sputtered film. In yet another alternate embodiment, the target is comprised of plugs pressed in a green state which are disposed in cavities formed in a main tile also formed in a green state and the assembly can then be compacted and then sintered.

  4. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  5. Ion beam sputtering of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

  6. Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

    NASA Astrophysics Data System (ADS)

    Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

    2014-12-01

    Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

  7. Method of making an ion beam sputter-etched ventricular catheter for hydrocephalus shunt

    NASA Technical Reports Server (NTRS)

    Banks, B. A. (Inventor)

    1984-01-01

    The centricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large opening at its inlet end and a multiplicity of microscopic openings along its lateral surfaces. The microtubules are perforated by an ion beam sputter etch technique. The holes are etched in each microtubule by directing an ion beam through an electro formed mesh mask producing perforations having diameters ranging from about 14 microns to about 150 microns. This structure assures a reliable means for shunting cerebrospinal fluid from the cerebral ventricles to selected areas of the body.

  8. Properties of Electron-Beam Irradiated CuInSe2 Layers by Multi-Step Sputtering Method.

    PubMed

    Kim, Chae-Woong; Kim, Jin Hyeok; Jeong, Chaehwan

    2015-10-01

    Typically, CuInSe2 (CIS) based thin films for photovoltaic devices are deposited by co-evaporation or by deposition of the metals, followed by treatment in a selenium environment. This article describes CIS films that are instead deposited by DC and RF magnetron sputtering from binary Cu2Se and In2Se3 targets without the supply of selenium. As a novel method, electron beam annealing was used for crystallization of Cu2Se/In2Se3 stacked precursors. The surface, cross-sectional morphology, and compositional ratio of CIS films were investigated to confirm the possibility in crystallization without any addition of selenium. Our work demonstrates that the e-beam annealing method can be a good candidate for the rapid crystallization of Cu-In-Se sputtered precursors. PMID:26726419

  9. Development of long-lived thick carbon stripper foils for high energy heavy ion accelerators by a heavy ion beam sputtering method

    SciTech Connect

    Muto, Hideshi; Ohshiro, Yukimitsu; Kawasaki, Katsunori; Oyaizu, Michihiro; Hattori, Toshiyuki

    2013-04-19

    In the past decade, we have developed extremely long-lived carbon stripper foils of 1-50 {mu}g/cm{sup 2} thickness prepared by a heavy ion beam sputtering method. These foils were mainly used for low energy heavy ion beams. Recently, high energy negative Hydrogen and heavy ion accelerators have started to use carbon stripper foils of over 100 {mu}g/cm{sup 2} in thickness. However, the heavy ion beam sputtering method was unsuccessful in production of foils thicker than about 50 {mu}g/cm{sup 2} because of the collapse of carbon particle build-up from substrates during the sputtering process. The reproduction probability of the foils was less than 25%, and most of them had surface defects. However, these defects were successfully eliminated by introducing higher beam energies of sputtering ions and a substrate heater during the sputtering process. In this report we describe a highly reproducible method for making thick carbon stripper foils by a heavy ion beam sputtering with a Krypton ion beam.

  10. Development of long-lived thick carbon stripper foils for high energy heavy ion accelerators by a heavy ion beam sputtering method

    NASA Astrophysics Data System (ADS)

    Muto, Hideshi; Ohshiro, Yukimitsu; Kawasaki, Katsunori; Oyaizu, Michihiro; Hattori, Toshiyuki

    2013-04-01

    In the past decade, we have developed extremely long-lived carbon stripper foils of 1-50 μg/cm2 thickness prepared by a heavy ion beam sputtering method. These foils were mainly used for low energy heavy ion beams. Recently, high energy negative Hydrogen and heavy ion accelerators have started to use carbon stripper foils of over 100 μg/cm2 in thickness. However, the heavy ion beam sputtering method was unsuccessful in production of foils thicker than about 50 μg/cm2 because of the collapse of carbon particle build-up from substrates during the sputtering process. The reproduction probability of the foils was less than 25%, and most of them had surface defects. However, these defects were successfully eliminated by introducing higher beam energies of sputtering ions and a substrate heater during the sputtering process. In this report we describe a highly reproducible method for making thick carbon stripper foils by a heavy ion beam sputtering with a Krypton ion beam.

  11. Masking Technique for Ion-Beam Sputter Etching

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1986-01-01

    Improved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.

  12. Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering

    DOEpatents

    Gruen, Dieter M.; Krauss, Alan R.; Siskind, Barry

    1981-01-01

    A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.

  13. Ion beam sputtering in electric propulsion facilities

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Patterson, Michael J.

    1991-01-01

    Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957 hr test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especially at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

  14. Ion beam sputtering in electric propulsion facilities

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Patterson, Michael J.

    1991-01-01

    Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957-hour test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especialy at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

  15. Ion beam sputter deposited diamond like films

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1982-01-01

    A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

  16. Effect of annealing on magnetic properties of Nd-Fe-B thin films prepared by ECR ion beam sputtering method

    NASA Astrophysics Data System (ADS)

    Tokumaru, R.; Tamano, S.; Goto, S.; Madeswaran, S.; Tokiwa, K.; Watanabe, T.

    2009-11-01

    Nd-Fe-B thin films were prepared by electron cyclotron resonance (ECR) ion beam sputtering and subsequent annealing. The influence of annealing on the magnetic properties and X-ray diffraction patterns of the product films was investigated. Amorphous films deposited at room temperature were annealed at temperatures between 600 and 800 °C. The c-axis oriented crystallization of the Nd2Fe14B phase did not appear by annealing of the buffer layer and magnetic Nd-Fe-B layer deposited at room temperature, and the hysteresis loops of the films indicated magnetic isotropy.

  17. Ion-beam sputtering increases solar-cell efficiency

    NASA Technical Reports Server (NTRS)

    Burk, D. E.; Dubow, J. B.; Sites, R. R.

    1977-01-01

    Ion-beam sputtering, fabrication of oxide-semiconductor-on-silicon (OSOS) solar cells, results in cells of 12% efficiency. Ion-beam sputtering technique is compatible with low-cost continuous fabrication and requires no high-temperature processing.

  18. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  19. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  20. Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

    PubMed

    Timilsina, Rajendra; Rack, Philip D

    2013-12-13

    A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed. PMID:24231648

  1. Ion Beam Sputtered Coatings of Bioglass

    NASA Technical Reports Server (NTRS)

    Hench, Larry L.; Wilson, J.; Ruzakowski, Patricia Henrietta Anne

    1982-01-01

    The ion beam sputtering technique available at the NASA-Lewis was used to apply coatings of bioglass to ceramic, metallic, and polymeric substrates. Experiments in vivo and in vitro described investigate these coatings. Some degree of substrate masking was obtained in all samples although stability and reactivity equivalent to bulk bioglass was not observed in all coated samples. Some degree of stability was seen in all coated samples that were reacted in vitro. Both metallic and ceramic substrates coated in this manner failed to show significantly improved coatings over those obtained with existing techniques. Implantation of the coated ceramic substrate samples in bone gave no definite bonding as seen with bulk glass; however, partial and patchy bonding was seen. Polymeric substrates in these studies showed promise of success. The coatings applied were sufficient to mask the underlying reactive test surface and tissue adhesion of collagen to bioglass was seen. Hydrophilic, hydrophobic, charged, and uncharged polymeric surfaces were successfully coated.

  2. Ion beam sputtering of Ag - Angular and energetic distributions of sputtered and scattered particles

    NASA Astrophysics Data System (ADS)

    Feder, René; Bundesmann, Carsten; Neumann, Horst; Rauschenbach, Bernd

    2013-12-01

    Ion beam sputter deposition (IBD) provides intrinsic features which influence the properties of the growing film, because ion properties and geometrical process conditions generate different energy and spatial distribution of the sputtered and scattered particles. A vacuum deposition chamber is set up to measure the energy and spatial distribution of secondary particles produced by ion beam sputtering of different target materials under variation of geometrical parameters (incidence angle of primary ions and emission angle of secondary particles) and of primary ion beam parameters (ion species and energies).

  3. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  4. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  5. Lifetime dependence of nitrided carbon stripper foils on sputter angle during N+ ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Sugai, I.; Oyaizu, M.; Takeda, Y.; Kawakami, H.; Kawasaki, K.; Hattori, T.; Kadono, T.

    2015-09-01

    We fabricated high-lifetime thin nitride carbon stripper (NCS) foils with high nitrogen contents using ion-beam sputtering with reactive nitrogen gas and investigated the dependence of their lifetimes on the sputter angle. The nitrogen in carbon foils plays a critical role in determining their lifetime. Therefore, in order to investigate the effects of the nitrogen level in NCS foils on foil lifetime, we measured the sputtering yield for different sputter angles at a sputtering voltage of 10 kV while using carbon-based targets. We also measured the nitrogen-to-carbon thickness ratios of the foils using Rutherford backscattering spectrometry. The foils made at a sputter angle of 15° using a glassy amorphous carbon target exhibited an average increase of 200-fold in lifetime when compared to commercially available foils.

  6. Stress reduction in ion beam sputtered mixed oxide films.

    PubMed

    Pond, B J; Debar, J I; Carniglia, C K; Raj, T

    1989-07-15

    Thin films deposited by ion beam sputtering typically have a high compressive stress. This paper demonstrates that this stress can be reduced by cosputtering two materials. Thin film mixtures of zirconia (ZrO(2)) and silica (SiO(2)) were prepared with a range of compositions using ion beam sputtering. The refractive index was found to vary almost linearly with composition. The large stress observed in zirconia films was found to be reduced significantly by the addition of silica. PMID:20555602

  7. Stress reduction in ion beam sputtered mixed oxide films

    SciTech Connect

    Pond, B. J.; DeBar, J. I.; Carniglia, C. K.; Raj, T.

    1989-07-15

    Thin films deposited by ion beam sputtering typically have a high compressive stress. This paper demonstrates that this stress can be reduced by cosputtering two materials. Thin film mixtures of zirconia (ZrO/sub 2/) and silica (SiO/sub 2/) were prepared with a range of compositions using ion beam sputtering. The refractive index was found to vary almost linearly with composition. The large stress observed in zirconia films was found to be reduced significantly by the addition of silica.

  8. Electron-beam activated thermal sputtering of thermoelectric materials.

    SciTech Connect

    Wu, J.; He, J.; Han, M-K.; Sootsman, J. R.; Girard, S.; Arachchige, I. U.; Kanatzidis, M. G.; Dravid, V. P.

    2011-08-01

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  9. Electron-beam activated thermal sputtering of thermoelectric materials

    SciTech Connect

    Wu Jinsong; Dravid, Vinayak P.; He Jiaqing; Han, Mi-Kyung; Sootsman, Joseph R.; Girard, Steven; Arachchige, Indika U.; Kanatzidis, Mercouri G.

    2011-08-15

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 deg. C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  10. Hydrogenated amorphous silicon deposited by ion-beam sputtering

    NASA Technical Reports Server (NTRS)

    Lowe, V. E.; Henin, N.; Tu, C.-W.; Tavakolian, H.; Sites, J. R.

    1981-01-01

    Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

  11. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  12. Electrostatic particle trap for ion beam sputter deposition

    DOEpatents

    Vernon, Stephen P.; Burkhart, Scott C.

    2002-01-01

    A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

  13. Development of Zn and Eu beams by plasma sputtering

    NASA Astrophysics Data System (ADS)

    Kumar, P.; Rodrigues, G.; Kanjilal, D.; Roy, A.; Singh, Beer Pal; Kumar, R.

    2006-05-01

    Accelerated ion beams of various species are important tools to engineer the materials. The low energy ion beam facility (LEIBF) at Nuclear Science Centre (NSC) provides the ion beams of energy in the range of a few keV to a few MeV. The LEIBF is fully operational since 2001 and its performance has been tested very well with ion beams from noble gases. Metallic and rare earth ion beams have important role in the field of nano-technology and enhancement of optical properties of semiconducting nano-particles inside various matrices. During the last few years, an effort was made to extract ion beams of various metal and rare earth elements using different techniques. Here we describe the successful development of Zn and Eu ion beams using sputtering technique in electron cyclotron resonance (ECR) ion source. Operational experience to produce such kind of beams and results on beam analysis are described in the paper.

  14. Neutral beam dose and sputtering characteristics in an ion implantation system

    NASA Technical Reports Server (NTRS)

    Roberts, A. S., Jr.; Ash, R. L.; Berger, M. H.

    1973-01-01

    A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

  15. Surface modification of biomedical implants using ion-beam-assisted sputter deposition

    NASA Astrophysics Data System (ADS)

    Ektessabi, A. M.

    1997-05-01

    Hydroxy-apatite (Ca 10(PO 4) 6(OH) 2), owing to its good bioaffinity and enhancement of osseo-integration, is a potential material for coating on dental and orthopedic implants. At present, hydroxy-apatite is coated on metal implants by a plasma-spraying method or is used in its bulk form in reconstruction surgery. In this paper, experimental results are given for preparation of hydroxy-apatite thin films on various biomedical implant materials using ion-beam sputter deposition and ion-beam-assisted sputter deposition methods. By using the ion-beam-assisted sputter deposition method, the adhesion of hydroxy-apatite thin films to substrate has improved significantly and increased to a level comparable to Ti and Al oxide thin films. Relative atomic densities of Ca, P, O and H in hydroxy-apatite thin films were obtained using ion-beam analysis methods such as RBS, RE-RBS, ERDA, and PIXE. The relative concentrations of Ca, and P were affected by assisting-beam density, and stoichiometric films were obtained for certain assisting-beam current densities.

  16. Thickness-dependent crystallization on thermal anneal for titania/silica nm-layer composites deposited by ion beam sputter method.

    PubMed

    Pan, Huang-Wei; Wang, Shun-Jin; Kuo, Ling-Chi; Chao, Shiuh; Principe, Maria; Pinto, Innocenzo M; DeSalvo, Riccardo

    2014-12-01

    Crystallization following thermal annealing of thin film stacks consisting of alternating nm-thick titania/silica layers was investigated. Several prototypes were designed, featuring a different number of titania/silica layer pairs, and different thicknesses (in the range from 4 to 40 nm, for the titania layers), but the same nominal refractive index (2.09) and optical thickness (a quarter of wavelength at 1064 nm). The prototypes were deposited by ion beam sputtering on silicon substrates. All prototypes were found to be amorphous as-deposited. Thermal annealing in air at progressive temperatures was subsequently performed. It was found that the titania layers eventually crystallized forming the anatase phase, while the silica layers remained always amorphous. However, progressively thinner layers exhibited progressively higher threshold temperatures for crystallization onset. Accordingly it can be expected that composites with thinner layers will be able to sustain higher annealing temperatures without crystallizing, and likely yielding better optical and mechanical properties for advanced coatings application. These results open the way to the use of materials like titania and hafnia, that crystallize easily under thermal anneal, but ARE otherwise promising candidate materials for HR coatings necessary for cryogenic 3rd generation laser interferometric gravitational wave detectors. PMID:25606914

  17. Sputtering

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1976-01-01

    The potential of using the sputtering process as a deposition technique is reviewed; however, the manufacturing and sputter etching aspects are also discussed. The basic mechanism for dc and rf sputtering is described. Sputter deposition is presented in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter etching, target geometry (coating and complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also discussed are some of the specific industrial areas which are turning to sputter deposition techniques.

  18. Sputtering - A vacuum deposition method for coating material.

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering method is discussed in terms of the unique features which sputter offers in depositing coatings. These features include versatility, momentum transfer, configuration of target, precise controls, and a relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and the internal stresses. The observed strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched surface, and the submicroscopic particle size. Film thickness can be controlled to a millionth of a centimeter. Very adherent films of sputtered PTFE (teflon) can be deposited in a single operation on any type of material and on any geometrical configuration.

  19. Direct analytical method of contact position effects on the energy-level alignments at organic semiconductor/electrode interfaces using photoemission spectroscopy combined with Ar gas cluster ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Yun, Dong-Jin; Chung, JaeGwan; Kim, Seong Heon; Kim, Yongsu; Park, SungHoon; Seol, Minsu; Heo, Sung

    2015-11-01

    Poly(3, 4-ethylenedioxythiophene) (PEDOT) polymerized with poly(4-styrenesulfonate) (PSS) is one of the most widely used conducting organic electrodes owing to its outstanding optical/electrical properties and high work function. Because its work function depends significantly on the molecular arrangements between PEDOT and PSS molecules on the surface, the contact position of PEDOT:PSS films on organic semiconductors (OSCs) must also be an essential consideration. However, existing analysis methods based on in situ deposition/analysis are limited in their ability to accurately investigate the electronic structures of the buried interface regions under the solution-processed electrode or OSC layer in organic devices. Therefore, to overcome such limitations, we propose a top-down method based on photoemission spectroscopy analysis combined with Ar gas cluster ion beam (GCIB) sputtering. Through this method, both energy-level alignments and molecular distributions at various OSC/electrode interfaces can be successfully characterized without reference to any deposition process.

  20. Pattern evolution during ion beam sputtering; reductionistic view

    NASA Astrophysics Data System (ADS)

    Kim, J.-H.; Kim, J.-S.

    2016-09-01

    The development of the ripple pattern during the ion beam sputtering (IBS) is expounded via the evolution of its constituent ripples. For that purpose, we perform numerical simulation of the ripple evolution that is based on Bradley-Harper model and its non-linear extension. The ripples are found to evolve via various well-defined processes such as ripening, averaging, bifurcation and their combinations, depending on their neighboring ripples. Those information on the growth kinetics of each ripple allow the detailed description of the pattern development in real space that the instability argument and the diffraction study both made in k-space cannot provide.

  1. Molecular sputter depth profiling using carbon cluster beams

    PubMed Central

    Winograd, Nicholas

    2010-01-01

    Sputter depth profiling of organic films while maintaining the molecular integrity of the sample has long been deemed impossible because of the accumulation of ion bombardment-induced chemical damage. Only recently, it was found that this problem can be greatly reduced if cluster ion beams are used for sputter erosion. For organic samples, carbon cluster ions appear to be particularly well suited for such a task. Analysis of available data reveals that a projectile appears to be more effective as the number of carbon atoms in the cluster is increased, leaving fullerene ions as the most promising candidates to date. Using a commercially available, highly focused C60q+ cluster ion beam, we demonstrate the versatility of the technique for depth profiling various organic films deposited on a silicon substrate and elucidate the dependence of the results on properties such as projectile ion impact energy and angle, and sample temperature. Moreover, examples are shown where the technique is applied to organic multilayer structures in order to investigate the depth resolution across film-film interfaces. These model experiments allow collection of valuable information on how cluster impact molecular depth profiling works and how to understand and optimize the depth resolution achieved using this technique. PMID:19649771

  2. Ion beam sputtering of fluoropolymers. [etching polymer films and target surfaces

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Ion beam sputter processing rates as well as pertinent characteristics of etched targets and films are described. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Sputter target and film characteristics documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs are included.

  3. Optical absorption of ion-beam sputtered amorphous silicon coatings

    NASA Astrophysics Data System (ADS)

    Steinlechner, Jessica; Martin, Iain W.; Bassiri, Riccardo; Bell, Angus; Fejer, Martin M.; Hough, Jim; Markosyan, Ashot; Route, Roger K.; Rowan, Sheila; Tornasi, Zeno

    2016-03-01

    Low mechanical loss at low temperatures and a high index of refraction should make silicon optimally suited for thermal noise reduction in highly reflective mirror coatings for gravitational wave detectors. However, due to high optical absorption, amorphous silicon (aSi) is unsuitable for being used as a direct high-index coating material to replace tantala. A possible solution is a multimaterial design, which enables exploitation of the excellent mechanical properties of aSi in the lower coating layers. The possible number of aSi layers increases with absorption reduction. In this work, the optimum heat treatment temperature of aSi deposited via ion-beam sputtering was investigated and found to be 450 °C . For this temperature, the absorption after deposition of a single layer of aSi at 1064 nm and 1550 nm was reduced by more than 80%.

  4. A self-sputtering ion source: A new approach to quiescent metal ion beams

    SciTech Connect

    Oks, Efim M.; Anders, Andre

    2009-09-03

    A new metal ion source is presented based on sustained self-sputtering plasma in a magnetron discharge. Metals exhibiting high self-sputtering yield like Cu, Ag, Zn, and Bi can be used in a high-power impulse magnetron sputtering (HIPIMS) discharge such that the plasma almost exclusively contains singly charged metal ions of the target material. The plasma and extracted ion beam are quiescent. The ion beams consist mostly of singly charged ions with a space-charge limited current density which reached about 10 mA/cm2 at an extraction voltage of 45 kV and a first gap spacing of 12 mm.

  5. A self-sputtering ion source: A new approach to quiescent metal ion beams

    SciTech Connect

    Oks, Efim

    2010-02-15

    A new metal ion source is presented based on sustained self-sputtering plasma in a magnetron discharge. Metals exhibiting high self-sputtering yield such as Cu, Ag, Zn, and Bi can be used in a high-power impulse magnetron sputtering discharge such that the plasma almost exclusively contains singly charged metal ions of the target material. The plasma and extracted ion beam are quiescent. The ion beams consist mostly of singly charged ions with a space-charge limited current density which reached about 10 mA/cm{sup 2} at an extraction voltage of 45 kV and a first gap spacing of 12 mm.

  6. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  7. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  8. Improving the laser damage resistance of oxide thin films and multilayers via tailoring ion beam sputtering parameters

    NASA Astrophysics Data System (ADS)

    Cosar, M. B.; Ozhan, A. E. S.; Aydogdu, G. H.

    2015-05-01

    Ion beam sputtering is one of the widely used methods for manufacturing laser optical components due to its advantages such as uniformity, reproducibility, suitability for multilayer coatings and growth of dielectric materials with high packing densities. In this study, single Ta2O5 layers and Ta2O5/SiO2 heterostructures were deposited on optical quality glass substrates by dual ion beam sputtering. We focused on the effect of deposition conditions like substrate cleaning, assistance by 12 cm diameter ion beam source and oxygen partial pressure on the laser-induced damage threshold of Ta2O5 single layers. Afterwards, the obtained information is employed to a sample design and produces a Ta2O5/SiO2 multilayer structure demonstrating low laser-induced damage without a post treatment procedure.

  9. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

    NASA Astrophysics Data System (ADS)

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

    2013-10-01

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP).

  10. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces.

    PubMed

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

    2013-10-01

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP). PMID:24182103

  11. Micrometer-Scale Machining of Metals and Polymers Enabled by Focused Ion Beam Sputtering

    SciTech Connect

    Adams, D.P.; Benavides, G.L.; Vasile, M.J.

    1998-12-22

    This work combines focused ion beam sputtering and ultra-precision machining for microfabrication of metal alloys and polymers. Specifically, micro-end mills are made by Ga ion beam sputtering of a cylindrical tool shank. Using an ion energy of 20keV, the focused beam defines the tool cutting edges that have submicrometer radii of curvature. We demonstrate 25 {micro}m diameter micromilling tools having 2, 4 and 5 cutting edges. These tools fabricate fine channels, 26-28 microns wide, in 6061 aluminum, brass, and polymethyl methacrylate. Micro-tools are structurally robust and operate for more than 5 hours without fracture.

  12. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

    SciTech Connect

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; Keudell, Achim von

    2013-10-15

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP)

  13. Study on the roughness evolution of optical surfaces during ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Liang, Xiao; Wang, Xiang; Gu, Yong-Qiang; Zheng, Jin-Jin; Yang, Huai-Jiang; Sui, Yong-Xin

    2015-10-01

    Ion beam machining technology has been extensively adopted to obtain an ultraprecision surface in ultraviolet lithography optics. However, there exist complex mechanisms leading the surface to evolve complicated topographies and increasing roughness. We build a kinetic model integrating with the typical sputter theory and a bond-counting Monte Carlo algorithm based on the compound materials to investigate the surface roughness evolution during ion beam sputtering. The influences of primary sputter, reflection, secondary sputter, geometrical shadowing, redeposition, and thermal diffusion were all taken into consideration to compose a dynamic evolution process. In calculation, using this model the surface first possesses a period of smoothing and then goes into a roughening stage, where the roughness follows the regular power law. Quantitative analyses of surface roughness derived from calculations are also examined and compared with experiments.

  14. Peculiarities of temperature dependent ion beam sputtering and channeling of crystalline bismuth

    NASA Astrophysics Data System (ADS)

    Langegger, Rupert; Hradil, Klaudia; Steiger-Thirsfeld, Andreas; Bertagnolli, Emmerich; Lugstein, Alois

    2014-08-01

    In this paper, we report on the surface evolution of focused ion beam treated single crystalline Bi(001) with respect to different beam incidence angles and channeling effects. ‘Erosive’ sputtering appears to be the dominant mechanism at room temperature (RT) and diffusion processes during sputtering seem to play only a minor role for the surface evolution of Bi. The sputtering yield of Bi(001) shows anomalous behavior when increasing the beam incidence angle along particular azimuthal angles of the specimen. The behavior of the sputtering yield could be related to channeling effects and the relevant channeling directions are identified. Dynamic annealing processes during ion irradiation retain the crystalline quality of the Bi specimen allowing ion channeling at RT. Lowering the specimen temperature to T = -188 °C reduces dynamic annealing processes and thereby disables channeling effects. Furthermore unexpected features are observed at normal beam incidence angle. Spike-like features appear during the ion beam induced erosion, whose growth directions are not determined by the ion beam but by the channeling directions of the Bi specimen.

  15. Ion beam sputter modification of the surface morphology of biological implants

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Banks, B. A.

    1976-01-01

    The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion beam sputtered surfaces.

  16. Fabrication of OSOS cells by neutral ion beam sputtering. [Oxide Semiconductor On Silicon solar cells

    NASA Technical Reports Server (NTRS)

    Burk, D. E.; Dubow, J. B.; Sites, J. R.

    1976-01-01

    Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

  17. Ion-beam-sputter modification of the surface morphology of biological implants

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Banks, B. A.

    1977-01-01

    The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion-beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron-bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion-beam-sputtered surfaces.

  18. Contamination removal by ion sputtering

    NASA Astrophysics Data System (ADS)

    Shaw, Christopher G.

    1990-11-01

    Experimental investigations are described for ion-beam sputtering and RF-plasma sputtering to determine the effectiveness of the methods for removing contaminants from an optical surface. The effects of ion-beam sputtering are tested with an ion gun and measured by mounting a 5-MHz quartz-crystal microbalance on a sample holder and simulating spacecraft contamination. RF-plasma sputtering involves the application of an alternating electric field to opposing electrodes immersed in a low density gas, and is tested with the same setup. The energy dependence of the sputtering yields is measured to determine whether the different contaminants are removed and whether the mirror surface is affected. Ion-beam sputtering removes all contaminants tested, but also affects the mirror surface at high energies. When the correct DC bias is applied, RF sputtering can remove the contaminants without removing the metal-mirror surface.

  19. Interfacial electrical properties of ion-beam sputter deposited amorphous carbon on silicon

    NASA Technical Reports Server (NTRS)

    Khan, A. A.; Woollam, J. A.; Chung, Y.; Banks, B.

    1983-01-01

    Amorphous, 'diamond-like' carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined.

  20. Monte Carlo simulations of nanoscale focused neon ion beam sputtering of copper: elucidating resolution limits and sub-surface damage.

    PubMed

    Timilsina, R; Tan, S; Livengood, R; Rack, P D

    2014-12-01

    A three dimensional Monte Carlo simulation program was developed to model physical sputtering and to emulate vias nanomachined by the gas field ion microscope. Experimental and simulation results of focused neon ion beam induced sputtering of copper are presented and compared to previously published experiments. The simulation elucidates the nanostructure evolution during the physical sputtering of high aspect ratio nanoscale features. Quantitative information such as the energy-dependent sputtering yields, dose dependent aspect ratios, and resolution-limiting effects are discussed. Furthermore, the nuclear energy loss and implant concentration beneath the etch front is correlated with the sub-surface damage revealed by transmission electron microscopy at different beam energies. PMID:25387461

  1. Monte Carlo simulations of nanoscale focused neon ion beam sputtering of copper: elucidating resolution limits and sub-surface damage

    NASA Astrophysics Data System (ADS)

    Timilsina, R.; Tan, S.; Livengood, R.; Rack, P. D.

    2014-12-01

    A three dimensional Monte Carlo simulation program was developed to model physical sputtering and to emulate vias nanomachined by the gas field ion microscope. Experimental and simulation results of focused neon ion beam induced sputtering of copper are presented and compared to previously published experiments. The simulation elucidates the nanostructure evolution during the physical sputtering of high aspect ratio nanoscale features. Quantitative information such as the energy-dependent sputtering yields, dose dependent aspect ratios, and resolution-limiting effects are discussed. Furthermore, the nuclear energy loss and implant concentration beneath the etch front is correlated with the sub-surface damage revealed by transmission electron microscopy at different beam energies.

  2. Synthesis of sputtered thin films in low energy ion beams

    NASA Astrophysics Data System (ADS)

    Howson, R. P.

    1997-01-01

    Magnetron sputtering is a process which gives a highly energetic depositing species. The growing film can be further bombarded with ions of the heavy gas used for sputtering by directing a plasma of it onto the surface. This can be done quite simply by using an unbalanced magnetron. The immersion of an insulating or isolated substrate-film combination in this plasma leads to a self-bias of around 30 V appearing on it's surface and a bombardment of low energy ions of the sputtering gas of several milli-amps per square centimetre. If the residual gas contains a reactive component, to form a compound film, then the gas is made much more reactive and less is needed to form the stoichiometric film. This can take place in a continuously operating system made stable using partial pressure control of the reactive gas with plasma emission monitoring or something similar. It can also be operated when the process of deposition is separated in time from the process of reaction and is repeated to build the film. We have called this process successive-plasma-anodisation (SPA) and it can be achieved by mechanically transferring the substrate between two magnetrons, one to deposit the metal film and one, which is unbalanced, to provide an oxygen plasma. It can also be operated by pulsing the reactive gas under carefully controlled conditions. Examples are given of the synthesis of compound films using low energy ion bombardment with these techniques and it is demonstrated that excellent films of a large range of oxides and nitrides can be made.

  3. Methods of beam cooling

    SciTech Connect

    Sessler, A.M.

    1996-02-01

    Diverse methods which are available for particle beam cooling are reviewed. They consist of some highly developed techniques such as radiation damping, electron cooling, stochastic cooling and the more recently developed, laser cooling. Methods which have been theoretically developed, but not yet achieved experimentally, are also reviewed. They consist of ionization cooling, laser cooling in three dimensions and stimulated radiation cooling.

  4. Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

    SciTech Connect

    Huang, H.S.; Chiu, C.H.; Hong, I.T.; Tung, H.C.; Chien, F.S.-S.

    2013-09-15

    Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes, which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.

  5. Effects of polycrystallinity in nano patterning by ion-beam sputtering

    SciTech Connect

    Yoon, Sun Mi; Kim, J.-S.; Yoon, D.; Cheong, H.; Kim, Y.; Lee, H. H.

    2014-07-14

    Employing graphites with distinctly different mean grain sizes, we study the effects of polycrystallinity on the pattern formation by ion-beam sputtering. The grains influence the growth of the ripples in a highly anisotropic fashion; both the mean uninterrupted ripple length along the ridges and the surface width depend on the mean size of the grains, which is attributed to the large sputter yield at the grain boundary compared with that on the terrace. In contrast, the ripple wavelength does not depend on the mean size of the grains, indicating that the mass transport across the grain boundaries should efficiently proceed by both thermal diffusion and ion-induced processes.

  6. Temporal evolution of the chemical structure during the pattern transfer by ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Ha, N.-B.; Jeong, S.; Yu, S.; Ihm, H.-I.; Kim, J.-S.

    2015-01-01

    Ru films patterned by ion-beam sputtering (IBS) serve as sacrificial masks for the transfer of the patterns to Si(1 0 0) and metallic glass substrates by continued IBS. Under the same sputter condition, however, both bare substrates remain featureless. Chemical analyses of the individual nano structures simultaneously with the investigation of their morphological evolution reveal that the pattern transfer, despite its apparent success, suffers from premature degradation before the mask is fully removed by IBS. Moreover, the residue of the mask or Ru atoms stubbornly remains near the surface, resulting in unintended doping or alloying of both patterned substrates.

  7. Mechanical and thermoelastic characteristics of optical thin films deposited by dual ion beam sputtering.

    PubMed

    Cetinörgü, Eda; Baloukas, Bill; Zabeida, Oleg; Klemberg-Sapieha, Jolanta E; Martinu, Ludvik

    2009-08-10

    Mechanical and thermoelastic properties of optical films are very important to ensure the performance of optical interference filters and optical coating systems. We systematically study the growth and the mechanical and thermoelastic characteristics of niobium oxide (Nb(2)O(5)), tantalum oxide (Ta(2)O(5)), and silicon dioxide (SiO(2)) thin films prepared by dual ion beam sputtering. First, we investigate the stress (sigma), hardness (H), reduced Young's modulus (E(r)), and scratch resistance. Second, we focus on the methodology and assessment of the coefficient of thermal expansion (CTE) and Poisson's ratio (nu) using the two-substrate method. For the high refractive index films, namely, Nb(2)O(5) (n at 550 nm=2.30) and Ta(2)O(5) (n at 550 nm=2.13), we obtained H approximately 6 GPa, E(r) approximately 125 GPa, CTE=4.9x10(-6) degrees C(-1), nu=0.22, and H approximately 7 GPa, E(r) approximately 133 GPa, CTE=4.4x10(-6) degrees C(-1), and nu=0.27, respectively. In comparison, for SiO(2) (n at 550 nm=1.48), these values are H approximately 9.5 GPa, E(r) approximately 87 GPa, CTE=2.1x10(-6) degrees C(-1), and nu=0.11. Correlations between the growth conditions (secondary beam ion energy and ion current), the microstructure, and the film properties are discussed. PMID:19668268

  8. Roughness evolution of sol-gel optical coatings by ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Gailly, P.; Dubreuil, O.; Fleury-Frenette, K.

    2015-12-01

    The surface roughness evolution of two silica-based sol-gel materials under 650 eV argon ion beam sputtering has been investigated. The liquid sol-gel solutions were applied on silicon substrates using the dip coating technique and thermally cured to obtain thin solid films and their thicknesses were then controlled over the samples surface using spectroscopic ellipsometry. The surface roughness of the sol-gel films was measured using both interferometric profilometry and atomic force microscopy depending on the obtained sputtering depths. We observed a significant increase of the roughness according to the sputtering depth, faster in the case of sol-gel layers than with bulk fused silica. Interestingly, the sputtering rates of the sol-gel layers were found much higher than the rate obtained on bulk fused silica. The development of micron scale holes with relatively stable interstices is supposed to rule the surface roughness evolution. AFM measurements revealed a regular submicron scale lateral structure which nanometric amplitude is amplified within sputtering.

  9. Calcium phosphate coatings produced by radiofrequency magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Bolbasov, E. N.; Zheravin, A. A.; Klimov, I. A.; Kulbakin, D. E.; Perelmuter, V. M.; Tverdokhlebov, S. I.; Cherdyntseva, N. V.; Choinzonov, E. L.

    2016-08-01

    Calcium phosphate coatings on titanium implants surface, produced by radio frequency (RF) magnetron sputtering method with hydroxyapatite solid target were investigated. It was found that produced coatings are calcium deficient compared to stoichiometric hydroxyapatite. The surface of the coatings is highly rough at the nanoscale and highly elastic. In vivo experiments on rats revealed that titanium implants with the calcium phosphate coatings do not cause negative tissue reaction after 6 months incubation period.

  10. Method and apparatus for improved high power impulse magnetron sputtering

    DOEpatents

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  11. Nanopatterning of mica surface under low energy ion beam sputtering

    SciTech Connect

    Metya, A.; Ghose, D.; Mollick, S. A.; Majumdar, A.

    2012-04-01

    Irradiation of crystalline muscovite mica samples by 500 eV Ar{sup +} ions at different incident angles can induce significant surface morphological variations. A periodic ripple pattern of nano-dimensions forms in the angle window 47 deg. -70 deg. . On the other hand, tilted conical protrusions develop on the surface at grazing incidence angles around 80 deg. . From the derivative of the topographic images the distribution of the side-facet slopes in the ion incidence plane are measured, which is found to be strongly related to the pattern morphology. Additionally, it has been shown that, for the ripple structures, the base angles can be tuned by changing the ion fluence. An asymmetric sawtooth profile of the ripples obtained at low fluence is transformed to a symmetrical triangular profile at high fluence. As the slopes are found to be small, the pattern formation is not provoked by the gradient-dependent erosion mechanism rather it is the general effect of the curvature-dependent sputtering phenomena.

  12. Investigation of surface characteristics evolution and laser damage performance of fused silica during ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Xu, Mingjin; Dai, Yifan; Zhou, Lin; Shi, Feng; Wan, Wen; Xie, Xuhui; Sui, Tingting

    2016-08-01

    Surface characteristics have great influence on the optical properties especially the laser radiation resistivity of optics. In this paper, the surface characteristics evolutions of fused silica during ion-beam sputtering and their effects on the laser damage performance were investigated. The results show that roughness change is strongly removal depth dependent and a super-smooth surface (0.25 nm RMS) can be obtained by the ion-induced smoothing effect. The concentration of metal impurities (especially Ce element) in subsurface can be effectively decreased after the removal of polishing re-deposition layer. During ion-beam sputtering process, the plastic scratches can be removed while the brittle cracks can be broadened and passivated without increase in the depth direction. Laser damage threshold of fused silica improved by 36% after ion-beam sputtering treatment. Research results have a guiding significance for ion-beam sputtering process technology of fused silica optics.

  13. Effect of surface texture by ion beam sputtering on implant biocompatibility and soft tissue attachment

    NASA Technical Reports Server (NTRS)

    Gibbons, D. F.

    1977-01-01

    The objectives in this report were to use the ion beam sputtering technique to produce surface textures on polymers, metals, and ceramics. The morphology of the texture was altered by varying both the width and depth of the square pits which were formed by ion beam erosion. The width of the ribs separating the pits were defined by the mask used to produce the texture. The area of the surface containing pits varies as the width was changed. The biological parameters used to evaluate the biological response to the texture were: (1) fibrous capsule and inflammatory response in subcutaneous soft tissue; (2) strength of the mechanical attachment of the textured surface by the soft tissue; and (3) morphology of the epidermal layer interfacing the textured surface of percutaneous connectors. Because the sputter yield on teflon ribs was approximately an order of magnitude larger than any other material the majority of the measurements presented in the report were obtained with teflon.

  14. Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S.; Shaltens, R. K. (Inventor)

    1973-01-01

    The method and equipment used for sputtering by use of an apertured electrode and a pulsed substrate bias are discussed. The technique combines the advantages of ion plating with the versatility of a radio frequency sputtered source. Electroplating is accomplished by passing a pulsed high voltage direct current to the article being plated during radio frequency sputtering.

  15. Control of silicon oxynitrides refractive index by reactive-assisted ion beam sputter deposition

    NASA Astrophysics Data System (ADS)

    Ida, Michel; Chaton, Patrick; Rafin, B.

    1994-11-01

    This paper presents the properties of silicon oxynitrides obtained by reactive ion beam sputter deposition: Dual Ion Beam System. Control of refractive index was achieved by adjusting the process parameters as ion beam current, ion beam energy and reactive gas partial pressure of oxygen and nitrogen. The main difficulty was to achieve stoichiometric nitride, it has been shown that energetic ionized nitrogen was needed to obtain silicon nitride. The major parameter, to obtain variable compositions between silica and silicon nitride, was the oxygen partial pressure with a fixed nitrogen partial pressure. Optical constants in the visible range, refractive index and extinction coefficient, have been measured by spectrophotometry and spectroscopic ellipsometry. Stoichiometry, contamination and packing density have been measured by Rutherford Backscattering and Nuclear Reaction Analysis. The correlation between the film composition and optical constants is shown. Various test results indicate that silicon oxynitrides obtained by reactive assisted ion beam sputtering are high quality optical materials. These films are homogeneous isotropic, with a high packing density. The extinction coefficient is in the order of 10-4 after 300 degree(s)C annealing. All values of refractive index between 1.49 and 2.1 can be chosen.

  16. Systematic investigations of low energy Ar ion beam sputtering of Si and Ag

    NASA Astrophysics Data System (ADS)

    Feder, R.; Frost, F.; Neumann, H.; Bundesmann, C.; Rauschenbach, B.

    2013-12-01

    Ion beam sputter deposition (IBD) delivers some intrinsic features influencing the growing film properties, because ion properties and geometrical process conditions generate different energy and spatial distributions of the sputtered and scattered particles. Even though IBD has been used for decades, the full capabilities are not investigated systematically and specifically used yet. Therefore, a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the generated secondary particles and backscattered ions and the deposited films needs to be done.A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters (ion incidence angle, position of substrates and analytics in respect to the target) and of ion beam parameters (ion species, ion energy) to perform a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. A set of samples was prepared and characterized with respect to selected film properties, such as thickness and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties as hypothesized before. Because of this influence, the energy distribution of secondary particles was measured using an energy-selective mass spectrometer. Among others, experiments revealed a high-energetic maximum for backscattered primary ions, which shifts with increasing emission angle to higher energies. Experimental data are compared with Monte Carlo simulations done with the well-known Transport and Range of Ions in Matter, Sputtering version (TRIM.SP) code [J.P. Biersack, W. Eckstein, Appl. Phys. A: Mater. Sci. Process. 34 (1984) 73]. The thicknesses of the films are in good agreement with those calculated from simulated particle fluxes. For the positions of the

  17. Ion beam analysis and co-sputtering simulation (CO-SS) of bi-metal films produced by magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Cruz, J.; Andrade, E.; Muhl, S.; Canto, C.; de Lucio, O.; Chávez, E.; Rocha, M. F.; Garcés-Medina, E.

    2016-03-01

    Magnetron sputtering is widely used to deposit thin films on different types of substrates. An important application of this method is to make multicomponent thin films using co-sputtering, where two or more elements are included in the target. The thickness and elemental composition of the films depend on the experimental parameters used, the system geometry and the spatial distribution of the elements in the target. If the target is made of two spatially separate pieces of the materials, then the composition of the deposit depends on a combination of the relative areas, the sputtering yield and the angular distribution of the emission of the sputtered flux of each material. In this work, a co-sputtering simulation program, known as CO-SS, was developed to simulate the thickness and composition of metal films produced by DC magnetron sputtering (Al) and co-sputtering (Al + Ti). The CO-SS code models the angular distribution of particles ejected by sputtering from the target, where this is assumed to vary as cosn β , where n is a free parameter and β is the angle of ejection relative to the normal to the surface of the target, and the sputtering yield of each material. The program also takes into account other geometry factors such as the distance between the target and the substrate, and the size of the substrate. Rutherford backscattering (RBS) using 4He was employed to measure the thickness and the composition of the films deposited on glass cover slides in order to assess the CO-SS program. The film thickness was also measured by profilometry. The CO-SS code was found to accurately model the experimental results for both the Al and Ti/Al films. The CO-SS code is freely available for use from http://demonstrations.wolfram.com/CoSputteringSimulationCOSS/.

  18. Nanoscale pattern formation at surfaces under ion-beam sputtering: A perspective from continuum models

    NASA Astrophysics Data System (ADS)

    Cuerno, Rodolfo; Castro, Mario; Muñoz-García, Javier; Gago, Raúl; Vázquez, Luis

    2011-05-01

    Although reports on surface nanostructuring of solid targets by low to medium energy ion irradiation date back to the 1960s, only with the advent of high resolution tools for surface/interface characterization has the high potential of this procedure been recognized as a method for efficient production of surface patterns. Such morphologies are made up of periodic arrangements of nanometric sized features, like ripples and dots, with interest for technological applications due to their electronic, magnetic, and optical properties. Thus, roughly for the last ten years large efforts have been directed towards harnessing this nanofabrication technique. However, and particularly in view of recent experimental developments, we can say that the basic mechanisms controlling these pattern formation processes remain poorly understood. The lack of nanostructuring at low angles of incidence on some pure monoelemental targets, the role of impurities in the surface dynamics and other recent observations are challenging the classic view on the phenomenon as the mere interplay between the curvature dependence of the sputtering yield and surface diffusion. We review the main attempts at a theoretical (continuum) description of these systems, with emphasis on recent developments. Strong hints already exist that the nature of the morphological instability has to be rethought as originating in the material flow that is induced by the ion beam.

  19. Kinetic Monte Carlo simulation of self-organized pattern formation induced by ion beam sputtering using crater functions

    NASA Astrophysics Data System (ADS)

    Yang, Zhangcan; Lively, Michael A.; Allain, Jean Paul

    2015-02-01

    The production of self-organized nanostructures by ion beam sputtering has been of keen interest to researchers for many decades. Despite numerous experimental and theoretical efforts to understand ion-induced nanostructures, there are still many basic questions open to discussion, such as the role of erosion or curvature-dependent sputtering. In this work, a hybrid MD/kMC (molecular dynamics/kinetic Monte Carlo) multiscale atomistic model is developed to investigate these knowledge gaps, and its predictive ability is validated across the experimental parameter space. This model uses crater functions, which were obtained from MD simulations, to model the prompt mass redistribution due to single-ion impacts. Defect migration, which is missing from previous models that use crater functions, is treated by a kMC Arrhenius method. Using this model, a systematic study was performed for silicon bombarded by Ar+ ions of various energies (100 eV, 250 eV, 500 eV, 700 eV, and 1000 eV) at incidence angles of 0∘ to 80∘. The simulation results were compared with experimental findings, showing good agreement in many aspects of surface evolution, such as the phase diagram. The underestimation of the ripple wavelength by the simulations suggests that surface diffusion is not the main smoothening mechanism for ion-induced pattern formation. Furthermore, the simulated results were compared with moment-description continuum theory and found to give better results, as the simulation did not suffer from the same mathematical inconsistencies as the continuum model. The key finding was that redistributive effects are dominant in the formation of flat surfaces and parallel-mode ripples, but erosive effects are dominant at high angles when perpendicular-mode ripples are formed. Ion irradiation with simultaneous sample rotation was also simulated, resulting in arrays of square-ordered dots. The patterns obtained from sample rotation were strongly correlated to the rotation speed and to

  20. Ion beam sputter deposition of TiNi shape memory alloy thin films

    NASA Astrophysics Data System (ADS)

    Davies, Sam T.; Tsuchiya, Kazuyoshi

    1999-08-01

    The development of functional or smart materials for integration into microsystem is of increasing interest. An example is the shape memory effect exhibited by certain metal alloys which, in principle, can be exploited in the fabrication of micro-scale manipulators or actuators, thereby providing on-chip micromechanical functionality. We have investigated an ion beam sputter deposition process for the growth of TiNi shape memory alloy thin films and demonstrated the required control to produce equiatomic composition, uniform coverage and atomic layer-by-layer growth rates on engineering surfaces. The process uses argon ions at intermediate energy produced by a Kaufman-type ion source to sputter non-alloyed targets of high purity titanium and nickel. Precise measurements of deposition rates allows compositional control during thin film growth. As the sputtering targets and substrates are remote from the discharge plasma, deposition occurs under good vacuum of approximately 10-6 mtorr thus promoting high quality films. Furthermore, the ion beam energetics allow deposition at relatively low substrate temperatures of < 150 degrees C with as-deposited films exhibiting shape memory properties without post-process high temperature annealing. Thermal imagin is used to monitor changes which are characteristic of the shape memory effect and is indicative of changes in specific heat capacity and thermal conductivity as the TiNi shape memory alloy undergoes martensitic to austenitic phase transformations.

  1. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, Mark A.; Alford, Craig S.; Makowiecki, Daniel M.; Chen, Chih-Wen

    1994-01-01

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface.

  2. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, M.A.; Alford, C.S.; Makowiecki, D.M.; Chen, C.W.

    1994-02-08

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface. 2 figures.

  3. Ion beam sputter deposition of V 2O 5 thin films

    NASA Astrophysics Data System (ADS)

    Gallasch, T.; Stockhoff, T.; Baither, D.; Schmitz, G.

    V 2O 5 thin films were deposited by means of dc-ion beam sputtering. To determine the influence of various deposition parameters, samples were characterized by X-ray diffractometry and transmission electron microscopy. Using electron energy loss spectroscopy, the oxidation state of vanadium was quantified based on the chemical shift of absorption edges. Measurement of in-plane direct current showed that the electronic conductivity varies over several orders of magnitude depending on the preparation conditions. The desired structure suitable for battery applications is achieved by sputtering under partial pressure of oxygen and suitable post-annealing under ambient atmosphere. Reversible intercalation of Li into the produced thin films was demonstrated.

  4. Transparent aluminium nanowire electrodes with optical and electrical anisotropic response fabricated by defocused ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Repetto, Diego; Giordano, Maria Caterina; Martella, Christian; Buatier de Mongeot, Francesco

    2015-02-01

    Self-organized Al nanowire (NW) electrodes have been obtained by defocused Ion Beam Sputtering (IBS) of polycrystalline Al films grown by sputter deposition. The electrical sheet resistance of the electrode has been acquired in situ during ion bombardment of the samples, evidencing an increase of the electronic transport anisotropy as a function of ion fluence between the two directions parallel and orthogonal to the NWs axis. Optical spectra in transmission also show a large dichroism between the two directions, suggesting the role of localized plasmons in the UV spectral range. The results show that Al NW electrodes, prepared under experimental conditions which are compatible with those of conventional industrial coaters and implanters, could represent a low cost alternative to the transparent conductive oxides employed in optoelectronic devices.

  5. Ion beam sputter etching of orthopedic implanted alloy MP35N and resulting effects on fatigue

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.; Christopher, M.; Bahnuik, E.; Wang, S.

    1981-01-01

    The effects of two types of argon ion sputter etched surface structures on the tensile stress fatigue properties of orthopedic implant alloy MP35N were investigated. One surface structure was a natural texture resulting from direct bombardment by 1 keV argon ions. The other structure was a pattern of square holes milled into the surface by a 1 keV argon ion beam through a Ni screen mask. The etched surfaces were subjected to tensile stress only in fatigue tests designed to simulate the cyclic load conditions experienced by the stems of artificial hip joint implants. Both types of sputter etched surface structures were found to reduce the fatigue strength below that of smooth surface MP35N.

  6. Ion beam sputter-etched ventricular catheter for hydrocephalus shunt

    NASA Technical Reports Server (NTRS)

    Banks, B. A. (Inventor)

    1983-01-01

    A cerebrospinal fluid shunt in the form of a ventricular catheter for controlling the condition of hydrocephalus by relieving the excessive cerebrospinal fluid pressure is described. A method for fabrication of the catheter and shunting the cerebral fluid from the cerebral ventricles to other areas of the body is also considered. Shunt flow failure occurs if the ventricle collapse due to improper valve function causing overdrainage. The ventricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large openings at its inlet end and a multiplicity of microscopic openings along its lateral surfaces.

  7. The optimization of incident angles of low-energy oxygen ion beams for increasing sputtering rate on silicon samples

    NASA Astrophysics Data System (ADS)

    Sasaki, T.; Yoshida, N.; Takahashi, M.; Tomita, M.

    2008-12-01

    In order to determine an appropriate incident angle of low-energy (350-eV) oxygen ion beam for achieving the highest sputtering rate without degradation of depth resolution in SIMS analysis, a delta-doped sample was analyzed with incident angles from 0° to 60° without oxygen bleeding. As a result, 45° incidence was found to be the best analytical condition, and it was confirmed that surface roughness did not occur on the sputtered surface at 100-nm depth by using AFM. By applying the optimized incident angle, sputtering rate becomes more than twice as high as that of the normal incident condition.

  8. One-dimensional pattern of Au nanodots by ion-beam sputtering: formation and mechanism.

    PubMed

    Kim, J-H; Ha, N-B; Kim, J-S; Joe, M; Lee, K-R; Cuerno, R

    2011-07-15

    Highly ordered one-dimensional arrays of nanodots, or nanobeads, are fabricated by forming nanoripples and nanodots in sequence, entirely by ion-beam sputtering (IBS) of Au(001). This demonstrates the capability of IBS for the fabrication of sophisticated nanostructures via hierarchical self-assembly. The intricate nanobead pattern ideally serves to identify the governing mechanisms for the pattern formation: nonlinear effects, especially local redeposition and surface-confined transport, are essential both for the formation and the preservation of the one-dimensional order of the nanobead pattern. PMID:21625038

  9. Nonlinear ripple dynamics on amorphous surfaces patterned by ion beam sputtering.

    PubMed

    Muñoz-García, Javier; Castro, Mario; Cuerno, Rodolfo

    2006-03-01

    Erosion by ion-beam sputtering (IBS) of amorphous targets at off-normal incidence frequently produces a (nanometric) rippled surface pattern, strongly resembling macroscopic ripples on aeolian sand dunes. A suitable generalization of continuum descriptions of the latter allows us to describe theoretically for the first time the main nonlinear features of ripple dynamics by IBS, namely, wavelength coarsening and nonuniform translation velocity, that agree with similar results in experiments and discrete models. These properties are seen to be the anisotropic counterparts of in-plane ordering and (interrupted) pattern coarsening in IBS experiments on rotating substrates and at normal incidence. PMID:16606197

  10. Adherence of ion beam sputter deposited metal films on H-13 steel

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1980-01-01

    An electron bombardment argon ion source was used to sputter deposit 17 different metal and metal oxide films ranging in thickness from 1 to 8 micrometers on H-13 steel substrates. The film adherence to the substrate surface was measured using a tensile test apparatus. Comparisons in bond strength were made between ion beam, ion plating, and RF deposited films. A protective coating to prevent heat checking in H-13 steel dies used for aluminum die casting was studied. The results of exposing the coated substrates to temperatures up to 700 degrees are presented.

  11. Physical processes in directed ion beam sputtering. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1979-01-01

    The general operation of a discharge chamber for the production of ions is described. A model is presented for the magnetic containment of both primary and secondary or Maxwellian electrons in the discharge plasma. Cross sections were calculated for energy and momentum transfer in binary collisions between like pairs of Ar, Kr, and Xe atoms in the energy range from about 1 eV to 1000 eV. These calculations were made from available pair interaction potentials using a classical model. Experimental data from the literature were fit to a theoretical expression for the Ar resonance charge exchange cross section over the same energy range. A model was developed that describes the processes of conical texturing of a surface due to simultaneous directed ion beam etching and sputter deposition of an impurity material. This model accurately predicts both a minimum temperature for texturing to take place and the variation of cone density with temperature. It also provides the correct order of magnitude of cone separation. It was predicted from the model, and subsequently verified experimentally, that a high sputter yield material could serve as a seed for coning of a lower sputter yield substrate. Seeding geometries and seed deposition rates were studied to obtain an important input to the theoretical texturing model.

  12. Sputtering: A vacuum deposition method for coating material

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering process is described in terms of its features: versatility, momentum transfer, configuration of target, precise controls and the relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and internal stresses. The strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched (cleaned) surface, and the submicroscopic particle size. An illustration is a sputtered solid film lubricant such as MoS2. Friction tests were conducted on a thin, 2000 A deg thick MoS2 film. These films are very dense and without observable pinholes, and the particle to particle cohesion is strong. Tolerances (film thickness) can be controlled to a millionth of a centimeter. Very adherent films of sputtered Teflon can be deposited in a single operation on any type of material (metal, glass, paper) and on any geometrical configuration with a dense adherent film.

  13. Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Voronov, D. L.; Gawlitza, P.; Cambie, R.; Dhuey, S.; Gullikson, E. M.; Warwick, T.; Braun, S.; Yashchuk, V. V.; Padmore, H. A.

    2012-05-01

    Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. To minimize the shadowing effects, we used an ion-beam sputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr+ ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.

  14. Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

    SciTech Connect

    Voronov, D. L.; Cambie, R.; Dhuey, S.; Gullikson, E. M.; Warwick, T.; Yashchuk, V. V.; Padmore, H. A.; Gawlitza, P.; Braun, S.

    2012-05-01

    Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. To minimize the shadowing effects, we used an ion-beam sputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr{sup +} ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.

  15. Residual stress in sputtered gold films on quartz measured by the cantilever beam deflection technique.

    PubMed

    Thornell, G; Ericson, F; Hedlund, C; Ohrmaim, J; Schweitz, J A; Portnoff, G

    1999-01-01

    With resonator applications in mind, the residual stress in sputtered gold electrodes on quartz has been investigated with respect to various deposition rates (2, 10, and 50 A/s), pressures (1.0 and 3.0 10(-3) mbar), deposition temperatures (80 degrees C and room temperature (RT)), film thicknesses (approx. 400 to 800 A), and substrate smoothnesses (lapped and polished), using the cantilever beam deflection method. Samples were monitored for 4 weeks at room temperature followed by 13 weeks of annealing at 85 degrees C. The initial stress (ranging from -180 to -60 MPa) was compressive for all samples but turned tensile (a few megaPascals) in some of the samples after annealing. A significant decrease in initial compressive stress appeared with samples coated at an elevated temperature. From samples prepared at lower pressure and differing only in film thickness and substrate roughness, an increased compressive stress was found in thicker films and on rougher surfaces. The stress relaxation has been fitted to an exponential expression, and an attempt to relate the stress to a frequency shift (typically a few parts per million for ordinary, 100-mum thick AT blanks) has been made. With the help of transmission electron microscopy (TEM) the film morphology was investigated and related to the deposition parameters and aging. Judging from the increase in compressive stress and grain refinement with increased deposition rate and decreased pressure, the atomic peening mechanism is the most likely reason for the induced stress. Rutherford backscattering spectrometry (RBS) was employed to rule out the inclusion of argon (below or around 0.5%) as an explanation. From the vague, but clearly discernible, trend toward faster RT stress relaxation with higher initial stress, together with the finer film morphology, the relief mechanism is believed to be stress-promoted grain boundary diffusion. PMID:18238503

  16. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  17. Method for measuring and controlling beam current in ion beam processing

    DOEpatents

    Kearney, Patrick A.; Burkhart, Scott C.

    2003-04-29

    A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.

  18. The ion beam sputtering facility at KURRI: Coatings for advanced neutron optical devices

    NASA Astrophysics Data System (ADS)

    Hino, Masahiro; Oda, Tatsuro; Kitaguchi, Masaaki; Yamada, Norifumi L.; Tasaki, Seiji; Kawabata, Yuji

    2015-10-01

    We describe a film coating facility for the development of multilayer mirrors for use in neutron optical devices that handle slow neutron beams. Recently, we succeeded in fabricating a large neutron supermirror with high reflectivity using an ion beam sputtering system (KUR-IBS), as well as all neutron supermirrors in two neutron guide tubes at BL06 at J-PARC/MLF. We also realized a large flexible self-standing m=5 NiC/Ti supermirror and very small d-spacing (d=1.65 nm) multilayer sheets. In this paper, we present an overview of the performance and utility of non-magnetic neutron multilayer mirrors fabricated with the KUR-IBS

  19. Ion Beam Sputter Fabrication of Micro-Grooving and Micro-Threading Tools

    SciTech Connect

    ADAMS,DAVID P.; VASILE,M.J.; KRISHNAN,A.S.M.

    1999-11-05

    This paper presents techniques for fabricating microscopic, nonplanar features in a variety of materials. Micro-grooving and micro-threading tools having cutting dimensions of 10-30{micro}m are made by focused ion beam sputtering and used in ultra-precision machining. Tool fabrication involves directing a 20 keV gallium beam at polished cylindrical punches made of cobalt M42 high-speed steel or C2 tungsten carbide. This creates cutting edges having radii of curvature less than 0.4 {micro}m, and rake features similar to conventional lathe tools. Clearance for minimizing frictional drag of a tool results from the sputter yield dependence on ion herd target incidence angle. Numerically controlled, ultra-precision machining with micro-grooving tools results in a close matching between tool width and feature size. Microtools controllably machine 13 {micro}m wide, 4 {micro}m deep, helical grooves in polymethyl methacrylate and 6061-T6 Al cylindrical substrates. Micro-grooving tools also fabricate sinusoidal waveform features in polished metal substrates.

  20. Laser beam pulse formatting method

    DOEpatents

    Daly, Thomas P.; Moses, Edward I.; Patterson, Ralph W.; Sawicki, Richard H.

    1994-01-01

    A method for formatting a laser beam pulse (20) using one or more delay loops (10). The delay loops (10) have a partially reflective beam splitter (12) and a plurality of highly reflective mirrors (14) arranged such that the laser beam pulse (20) enters into the delay loop (10) through the beam splitter (12) and circulates therein along a delay loop length (24) defined by the mirrors (14). As the laser beam pulse (20) circulates within the delay loop (10) a portion thereof is emitted upon each completed circuit when the laser beam pulse (20) strikes the beam splitter (12). The laser beam pulse (20) is thereby formatted into a plurality of sub-pulses (50, 52, 54 and 56). The delay loops (10) are used in combination to produce complex waveforms by combining the sub-pulses (50, 52, 54 and 56) using additive waveform synthesis.

  1. Laser beam pulse formatting method

    DOEpatents

    Daly, T.P.; Moses, E.I.; Patterson, R.W.; Sawicki, R.H.

    1994-08-09

    A method for formatting a laser beam pulse using one or more delay loops is disclosed. The delay loops have a partially reflective beam splitter and a plurality of highly reflective mirrors arranged such that the laser beam pulse enters into the delay loop through the beam splitter and circulates therein along a delay loop length defined by the mirrors. As the laser beam pulse circulates within the delay loop a portion thereof is emitted upon each completed circuit when the laser beam pulse strikes the beam splitter. The laser beam pulse is thereby formatted into a plurality of sub-pulses. The delay loops are used in combination to produce complex waveforms by combining the sub-pulses using additive waveform synthesis. 8 figs.

  2. Method of cold welding using ion beam technology

    NASA Technical Reports Server (NTRS)

    Sater, B. L. (Inventor)

    1981-01-01

    A method for cold welding metal joints is described. In order to remove the contamination layer on the surface of the metal, an ion beam generator is used in a vacuum environment. A gas, such as xenon or argon, is ionized and accelerated toward the metal surface. The beam of gas effectively sputters away the surface oxides and contamination layer so that clean underlying metal is exposed in the area to be welded. The use of this method allows cold welding with minimal deformation. Both similar and dissimilar metals can be cold welded with this method.

  3. Apparatus for and method of controlling sputter coating

    SciTech Connect

    Boys, R.

    1985-02-19

    The magnetic field of a magnetron sputter coating apparatus is controlled in response to measurements of plasma parameters to control deposition parameters, such as sputter deposition rate and material deposition thickness profile. From time to time the apparatus is standardized to change preset values for parameters of the plasma to manage the deposition parameters.

  4. Nanopatterning of silicon surfaces by low-energy ion-beam sputtering: dependence on the angle of ion incidence

    NASA Astrophysics Data System (ADS)

    Gago, R.; Vázquez, L.; Cuerno, R.; Varela, M.; Ballesteros, C.; Albella, J. M.

    2002-06-01

    We report on the production of nanoscale patterning on Si substrates by low-energy ion-beam sputtering. The surface morphology and structure of the irradiated surface were studied by atomic force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM). Under ion irradiation at off-normal incidence angle (~50°), AFM images show the formation of both nanoripple and sawtooth-like structures for sputtering times longer than 20 min. The latter feature coarsens appreciably after 60 min of sputtering, inducing a large increase in the surface roughness. This behaviour is attributed to the preferential direction determined on the substrate by the ion beam for this incidence angle, leading to shadowing effects among surface features in the sputtering process. Under irradiation at normal incidence, the formation of an hexagonal array of nanodots is induced for irradiation times longer than 2 min. The shape and crystallinity of the nanodots were determined by HRTEM. At this incidence angle, the surface roughness is very low and remains largely unchanged even after 16 h of sputtering. For the two angle conditions studied, the formation of the corresponding surface structures can be understood as the interplay between an instability due to the sputtering yield dependence on the local surface curvature and surface smoothing processes such as surface diffusion.

  5. Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

    SciTech Connect

    Chan, J.; Fu, T.; Cheung, N.W.; Ross, J.; Newman, N.; Rubin, M.

    1993-04-01

    Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 C, while the crystallinity of AlN/(0001) A1{sub 2}O{sub 3} samples improved from 700 to 850 C. The optical absorption characteristics of the AlN/(0001) A1{sub 2}O{sub 3} films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

  6. Thermal stability of magnetron and ion beam sputtered top and bottom spin-valve films

    SciTech Connect

    Mao, Ming; Cerjan, Charlie; Hung, Stephanie; Miloslavsky, Lena; Chien, Chester; Sant, Sudhi

    2001-06-01

    The thermal stability of top and bottom IrMn exchange-biased spin-valve films prepared by ion beam deposition (IBD) and magnetron sputtering physical vapor deposition (PVD) is compared. These films exhibit identical temperature dependence for the exchange bias field H{sub ex}, with a blocking temperature of T{sub B}=250{degree}C, that is independent of preparation technique. Isothermal annealing at temperatures below T{sub B} led to a ln(t) dependent degradation in H{sub ex}, suggesting a thermal activation process. The high crystallographic quality of the IBD films leads to a superior stability compared to PVD films. Top spin-valve films are also found to be more stable than bottom spin-valve films. {copyright} 2001 American Institute of Physics.

  7. Characterization of ion beam and magnetron sputtered thin Ta/NiFe films

    NASA Astrophysics Data System (ADS)

    Mao, M.; Leng, Q.; Huai, Y.; Johnson, P.; Miller, M.; Tong, H.-C.; Miloslavsky, L.; Qian, C.; Wang, J.; Hegde, H.

    1999-04-01

    Thin Ta/NiFe films were deposited using ion beam deposition (IBD), pulsed, and static magnetron sputtering techniques. These NiFe films show anisotropy field values ˜4 Oe, easy axis coercivities ⩽1 Oe, and hard axis coercivities ⩽0.3 Oe. IBD films exhibit higher magnetoresistance ratios (ΔR/R), while little difference is noted between different deposition techniques in the sheet resistance of NiFe films. A ΔR/R value of 1.8% has been measured for a 90 Å IBD NiFe films. X-ray diffraction measurements indicate that NiFe films of the same thickness have about the same grain size regardless of deposition technique, however, IBD films exhibit superior (111) texture and crystallinity. Our results clearly indicate that the superior magnetic properties of thin IBD Ta/NiFe films are a result of high crystallographic quality of these films.

  8. Thermal stability of magnetron and ion beam sputtered top and bottom spin-valve films

    NASA Astrophysics Data System (ADS)

    Mao, Ming; Cerjan, Charlie; Hung, Stephanie; Miloslavsky, Lena; Chien, Chester; Sant, Sudhi

    2001-06-01

    The thermal stability of top and bottom IrMn exchange-biased spin-valve films prepared by ion beam deposition (IBD) and magnetron sputtering physical vapor deposition (PVD) is compared. These films exhibit identical temperature dependence for the exchange bias field Hex, with a blocking temperature of TB=250 °C, that is independent of preparation technique. Isothermal annealing at temperatures below TB led to a ln(t) dependent degradation in Hex, suggesting a thermal activation process. The high crystallographic quality of the IBD films leads to a superior stability compared to PVD films. Top spin-valve films are also found to be more stable than bottom spin-valve films.

  9. Optical and tribomechanical stability of optically variable interference security devices prepared by dual ion beam sputtering.

    PubMed

    Çetinörgü-Goldenberg, Eda; Baloukas, Bill; Zabeida, Oleg; Klemberg-Sapieha, Jolanta; Martinu, Ludvik

    2011-07-01

    Optical security devices applied to banknotes and other documents are exposed to different types of harsh environments involving the cycling of temperature, humidity, chemical agents, and tribomechanical intrusion. In the present work, we study the stability of optically variable devices, namely metameric interference filters, prepared by dual ion beam sputtering onto polycarbonate and glass substrates. Specifically, we assess the color difference as well as the changes in the mechanical properties and integrity of all-dielectric and metal-dielectric systems due to exposure to bleach, detergent and acetone agents, and heat and humidity. The results underline a significant role of the substrate material, of the interfaces, and of the nature and microstructure of the deposited films in long term stability under everyday application conditions. PMID:21743540

  10. Scanning-electron-microscopy observations and mechanical characteristics of ion-beam-sputtered surgical implant alloys

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Meyer, M. L.; Ling, J. S.

    1977-01-01

    An electron bombardment ion thruster was used as an ion source to sputter the surfaces of orthopedic prosthetic metals. Scanning electron microscopy photomicrographs were made of each ion beam textured surface. The effect of ion texturing an implant surface on its bond to bone cement was investigated. A Co-Cr-W alloy and surgical stainless steel were used as representative hard tissue implant materials to determine effects of ion texturing on bulk mechanical properties. Work was done to determine the effect of substrate temperature on the development of an ion textured surface microstructure. Results indicate that the ultimate strength of the bulk materials is unchanged by ion texturing and that the microstructure will develop more rapidly if the substrate is heated prior to ion texturing.

  11. Characterization of zirconia- and niobia-silica mixture coatings produced by ion-beam sputtering

    SciTech Connect

    Melninkaitis, Andrius; Tolenis, Tomas; Mazule, Lina; Mirauskas, Julius; Sirutkaitis, Valdas; Mangote, Benoit; Fu Xinghai; Zerrad, Myriam; Gallais, Laurent; Commandre, Mireille; Kicas, Simonas; Drazdys, Ramutis

    2011-03-20

    ZrO{sub 2}-SiO{sub 2} and Nb{sub 2}O{sub 5}-SiO{sub 2} mixture coatings as well as those of pure zirconia (ZrO{sub 2}), niobia (Nb{sub 2}O{sub 5}), and silica (SiO{sub 2}) deposited by ion-beam sputtering were investigated. Refractive-index dispersions, bandgaps, and volumetric fractions of materials in mixed coatings were analyzed from spectrophotometric data. Optical scattering, surface roughness, nanostructure, and optical resistance were also studied. Zirconia-silica mixtures experience the transition from crystalline to amorphous phase by increasing the content of SiO{sub 2}. This also results in reduced surface roughness. All niobia and silica coatings and their mixtures were amorphous. The obtained laser-induced damage thresholds in the subpicosecond range also correlates with respect to the silica content in both zirconia- and niobia-silica mixtures.

  12. Measurement and analysis on ion barrier film of MCP by ion beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Ni; Zhu, Yu-Feng; Li, Dan; Nie, Jing; Zhang, Fan; Zhang, Tai-min; Liu, Xiao-jian; Liu, Zhao-lu; Cheng, Wei; Chen, Chang

    2015-03-01

    Ion barrier film (IBF) on the input side surface of Micro-channel Plate (MCP ) has a dual role in the high electron transmittance and high ionic blocking rate, and the quality of the film is very strict, so to choose a good coating way to meet the application of IBF-MCP in the third image intensifier is very important. Ion beam sputtering deposition (IBSD) technology is a relatively mature coating technology which can obtain a dense strong adhesion and smooth, high-quality film. This paper is carried out from the quality analysis on surface morphology, crystal structure and coating quality and comparison with qualified film to determine a better way to prepare IBF on the input side surface of MCP.

  13. The Growth Mechanism of Silicon Nanodots Synthesized by Sputtering Method

    NASA Astrophysics Data System (ADS)

    Sakrani, Samsudi; Idrees, Fatima Aldaw; Othaman, Zulkafli; Ismail, Abd. Khamim

    2011-05-01

    Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, followed by a further growth of stable islands so-called nanodots, with the measured radii comparable to the predicted values. Other measurement results confirmed the existence of these dots, including the bandgap energy ˜1.80 eV from PL and a 5% at. silicon from EDX. The nucleation parameters were predicted as follows: Free energy change per unit volume ΔGv˜-2.4×105Jmol-1; Surface energies per unit area, γLN = 1.48 Jm-2, γNS = 21.6-88.3 Jcm-2 and γLS = 0.82×10-2 Jm-2; Critical energies ΔG* = 6.83×10-16-3.68×10-14 J; Critical radii r* = 20-72 nm. This experimental evidence strongly support the early stage growth model of silicon quantum dot deposited on corning glass substrate.

  14. The Growth Mechanism of Silicon Nanodots Synthesized by Sputtering Method

    SciTech Connect

    Sakrani, Samsudi; Idrees, Fatima Aldaw; Othaman, Zulkafli; Ismail, Abd. Khamim

    2011-05-25

    Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, followed by a further growth of stable islands so-called nanodots, with the measured radii comparable to the predicted values. Other measurement results confirmed the existence of these dots, including the bandgap energy {approx}1.80 eV from PL and a 5% at. silicon from EDX. The nucleation parameters were predicted as follows: Free energy change per unit volume {Delta}G{sub v{approx}}-2.4x10{sup 5} Jmol{sup -1}; Surface energies per unit area, {gamma}{sub LN} = 1.48 Jm{sup -2}, {gamma}{sub NS} = 21.6-88.3 Jcm{sup -2} and {gamma}{sub LS} 0.82x10{sup -2} Jm{sup -2}; Critical energies {Delta}G* = 6.83x10{sup -16}-3.68x10{sup -14} J; Critical radii r* = 20-72 nm. This experimental evidence strongly support the early stage growth model of silicon quantum dot deposited on corning glass substrate.

  15. Effect of Ar Ion Beam Pre-Treatment of Poly(ethylene terephthalate) Substrate on the Mechanical and Electrical Stability of Flexible InSnO Films Grown by Roll-to-Roll Sputtering System

    NASA Astrophysics Data System (ADS)

    Choi, Kwang-Hyuk; Kim, Han-Ki

    2013-10-01

    We investigated the effects of Ar ion beam irradiation on a flexible poly(ethylene terephthalate) (PET) substrate as surface pre-treatment method in the roll-to-roll (R2R) sputtering system and its contribution to the electrical durability of flexible InSnO (ITO) electrode upon that the flexible PET substrate under repeated mechanical stresses. It was found that the Ar ion beam irradiation of the flexible PET surface could improve an adhesion between R2R sputter-grown ITO film and the PET substrate. X-ray photoelectron spectroscopy results showed that the Ar ion beam irradiation lead to an increase of hydrophilic functional groups when the working pressure, Ar ion beam power, and exposure time increases. Repetitive bending stresses for the flexible ITO/PET film which fabricated through the surface pre-treatment by Ar ion beam irradiation showed more stable electrical durability than those of ITO films on the wet-cleaned PET substrate due to enhanced interfacial adhesion between the ITO film and PET surface. This suggests that the Ar ion beam pre-treatment before sputtering of ITO film in R2R sputtering system is an effective technique to improve the adhesion between ITO film and PET substrate.

  16. Magnetron sputtering as a method of thin-film catalyst development for electrochemical sensors

    NASA Astrophysics Data System (ADS)

    Medvedeva, E. A.

    2016-07-01

    The aim of this work was to develop a thin-film Pt/C catalyst on the fluoroplastic substrates by means of the magnetron sputtering method in order to use as reference and working electrodes of electrochemical cells.

  17. Ion-beam sputtered amorphous silicon films for cryogenic precision measurement systems

    NASA Astrophysics Data System (ADS)

    Murray, Peter G.; Martin, Iain W.; Craig, Kieran; Hough, James; Robie, Raymond; Rowan, Sheila; Abernathy, Matt R.; Pershing, Teal; Penn, Steven

    2015-09-01

    Thermal noise resulting from the mechanical loss of multilayer dielectric coatings is expected to impose a limit to the sensitivities of precision measurement systems used in fundamental and applied science. In the case of gravitational wave astronomy, future interferometric gravitational wave detectors are likely to operate at cryogenic temperatures to reduce such thermal noise and ameliorate thermal loading effects, with the desirable thermomechanical properties of silicon making it an attractive mirror substrate choice for this purpose. For use in such a precision instrument, appropriate coatings of low thermal noise are essential. Amorphous silicon (a -Si ) deposited by e-beam and other techniques has been shown to have low mechanical loss. However, to date, the levels of mechanical and optical loss for a -Si when deposited by ion-beam sputtering (the technique required to produce amorphous mirrors of the specification for gravitational wave detector mirrors) are unknown. In this paper results from measurements of the mechanical loss of a series of IBS a -Si films are presented which show that reductions are possible in coating thermal noise of a factor of 1.5 at 120 K and 2.1 at 20 K over the current best IBS coatings (alternating stacks of silica and titania-doped tantala), with further reductions feasible under appropriate heat treatments.

  18. Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

    1998-01-01

    The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

  19. Method for sputtering with low frequency alternating current

    DOEpatents

    Timberlake, John R.

    1996-01-01

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking.

  20. Method for sputtering with low frequency alternating current

    DOEpatents

    Timberlake, J.R.

    1996-04-30

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking. 6 figs.

  1. Ion beam and plasma methods of producing diamondlike carbon films

    NASA Technical Reports Server (NTRS)

    Swec, Diane M.; Mirtich, Michael J.; Banks, Bruce A.

    1988-01-01

    A variety of plasma and ion beam techniques was employed to generate diamondlike carbon films. These methods included the use of RF sputtering, dc glow discharge, vacuum arc, plasma gun, ion beam sputtering, and both single and dual ion beam deposition. Since films were generated using a wide variety of techniques, the physico-chemical properties of these films varied considerably. In general, these films had characteristics that were desirable in a number of applications. For example, the films generated using both single and dual ion beam systems were evaluated for applications including power electronics as insulated gates and protective coatings on transmitting windows. These films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Nuclear reaction and combustion analysis indicated hydrogen to carbon ratios to be 1.00, which allowed the films to have good transmittance not only in the infrared, but also in the visible. Other evaluated properties of these films include band gap, resistivity, adherence, density, microhardness, and intrinsic stress. The results of these studies and those of the other techniques for depositing diamondlike carbon films are presented.

  2. Symmetry of surface nanopatterns induced by ion-beam sputtering: Role of anisotropic surface diffusion

    NASA Astrophysics Data System (ADS)

    Renedo, Javier; Cuerno, Rodolfo; Castro, Mario; Muñoz-García, Javier

    2016-04-01

    Ion-beam sputtering (IBS) is a cost-effective technique able to produce ordered nanopatterns on the surfaces of different materials. To date, most theoretical studies of this process have focused on systems which become amorphous under irradiation, e.g., semiconductors at room temperature. Thus, in spite of the large amount of experimental work on metals, or more recently on semiconductors at high temperatures, such experimental contexts have received relatively little theoretical attention. These systems are characterized by transport mechanisms, e.g., surface diffusion, which are anisotropic as a reflection of the crystalline structure not being overruled by the irradiation. Here, we generalize a previous continuum theory of IBS at normal incidence, in order to account for anisotropic surface diffusion. We explore systematically our generalized model in order to understand the role of anisotropy in the space-ordering properties of the resulting patterns. In particular, we derive a height equation which predicts morphological transitions among hexagonal and rectangular patterns as a function of system parameters and employ an angular correlation function to assess these pattern symmetries. By suitably choosing experimental conditions, it is found that one might be able to experimentally control the type of order displayed by the patterns produced.

  3. The Electric, Magnetic, and Optical Characterization of Permalloy Oxide Grown by Dual-Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Compton, Maclyn; Leblanc, Elizabeth; Geerts, Wilhelmus; Simpson, Nelson; Robinson, Michael

    2014-03-01

    Permalloy (Ni80Fe20) is a commonly used soft magnetic material in magnetic reading heads. Its magnetic properties do not depend on stress, a parameter difficult to control in thin film devices. Permalloy Oxide (PyO) on the other hand, has a high resistivity (>4 .103 Ω cm), is anti-ferromagnetic and has recently been shown to strongly enhance the performance of lateral spin valve devices. Historically, the oxidation of permalloy has been seen as a defect that should be avoided by appropriate encapsulation and very little is known on its electric and optical properties. We deposited thin PyO films by Dual Ion Beam Sputtering (DIBS) at room temperature on various substrates. Van der Pauw and Hall measurements were carried out from 77K to 400K and at magnetic fields up to 9T in order to determine its electronic bandgap, resistivity, free carrier concentration, and its mobility. The dielectric properties and defects were studied using a CV-setup and an impedance analyzer. Magnetic measurements were conducted on a Quantum Design PPMS VSM to determine the state of oxidation. Optical properties were measured by a M2000 Woollam variable angle spectroscopic ellipsometer. These properties were used to determine film thickness, bandgap and the optical constants of PyO. The authors would like to thank Research Corporation for financial support.

  4. Laser beam alignment apparatus and method

    DOEpatents

    Gruhn, Charles R.; Hammond, Robert B.

    1981-01-01

    The disclosure relates to an apparatus and method for laser beam alignment. Thermoelectric properties of a disc in a laser beam path are used to provide an indication of beam alignment and/or automatic laser alignment.

  5. Laser beam alignment apparatus and method

    DOEpatents

    Gruhn, C.R.; Hammond, R.B.

    The disclosure related to an apparatus and method for laser beam alignment. Thermoelectric properties of a disc in a laser beam path are used to provide an indication of beam alignment and/or automatic laser alignment.

  6. Structure and composition of zirconium carbide thin-film grown by ion beam sputtering for optical applications

    SciTech Connect

    Singh, Amol Modi, Mohammed H. Dhawan, Rajnish Lodha, G. S.

    2014-04-24

    Thin film of compound material ZrC was deposited on Si (100) wafer using ion beam sputtering method. The deposition was carried out at room temperature and at base pressure of 3×10{sup −5} Pa. X-ray photoelectron spectroscopy (XPS) measurements were performed for determining the surface chemical compositions. Grazing incidence x-ray reflectivity (GIXRR) measurements were performed to study the film thickness, roughness and density. From GIXRR curve roughness value of the film was found less than 1 nm indicating smooth surface morphology. Films density was found 6.51 g/cm{sup 3}, which is close to bulk density. Atomic force microscopy (AFM) measurements were performed to check the surface morphology. AFM investigation showed that the film surface is smooth, which corroborate the GIXRR data. Figure 2 of the original article PDF file, as supplied to AIP Publishing, contained a PDF processing error. This article was updated on 12 May 2014 to correct that error.

  7. Depth profiling using total reflection X-ray fluorescence spectrometry alone and in combination with ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Schwenke, H.; Knoth, J.; Günther, R.; Wiener, G.; Bormann, R.

    1997-07-01

    The capability of total reflection X-ray fluorescence spectrometry (TXRF) for depth profiling is examined by means of selected examples including organometallic layers, an implantation profile of arsenic in silicon and a layered nickel/cobalt structure. For structures without density differences that are deeper than 20 nm or so, and also for buried layers and for the examination of sharp interfaces, which require the highest resolution, two different combinations of ion beam sputtering with TXRF have been employed. A microsectioning technique was investigated in which samples were etched to a bevel shape and subsequently scanned by TXRF. A depth resolution of 2.5 nm was obtained. Alternatively, the so called "transfer technique" was investigated. This involves surface atoms being sputtered by an ion beam and immediately deposited on a silicon wafer rotated behind a slit which is moved in step with the sputter progress. Subsequently, the wafer is scanned by TXRF. Using this technique, the width of a coherent Ti/Al interface within a layered structure was measured to be 1.4 nm. The depth resolutions of the "microsectioning" and the "transfer" techniques are compared with data from RBS, XPS, SIMS and SNMS.

  8. Liquid crystal surface alignments by using ion beam sputtered magnetic thin films

    SciTech Connect

    Wu, H.-Y.; Pan, R.-P.

    2007-08-13

    A method for liquid crystal surface alignment by using a one-step, ion beam bombardment of the glass substrates is demonstrated. Precoating by polyimide is not necessary. The authors show that the homeotropic alignment is achieved due to orientation of the diamagnetic nematogenic molecules by the magnetic field from the {gamma}-Fe{sub 2}O{sub 3} ferrimagnetic thin films created on the substrates by ion beam bombardment. The film exhibits a high Curie temperature well above 300 K and a compensation temperature which is the typical feature of ferrimagnetism. This is a simple, noncontact, and reliable alignment method for liquid crystal devices.

  9. The mechanism of controlling liquid crystal surface pretilt angle on plasma beam sputtered films

    NASA Astrophysics Data System (ADS)

    Pan, Ru-Pin; Huang, Meng-Chiou; Wu, Wei-Ta; Lai, Cheng-Wei; Wu, Hsin-Ying

    2012-02-01

    In liquid crystal (LC) devices, the surface alignment is essential. The polyimide (PI) film is commonly used to make LC molecules parallel to the surface. A rubbing process is usually applied to choose a particular direction on the surface. A pretilt angle is also induced, which is useful but usually very small. In previous works, we have found out that the sputtered ion-oxide films can give a homeotropic alignment to LC, i,e, the LC molecules are perpendicular to the surface. In this work, we combine these two effects by sputtering the ion-oxide particles onto the PI coated glasses. By adjusting the sputtering conditions, the LC alignment are controlled. A wide range of pretilt angles have been achieved, while the rubbing process is no longer required. A thorough study by varying the sputtering conditions, such as voltage, current, and time duration, and observing the pretilt angles is carried out. The sputtered surfaces are examined with scanning electron microscope to see the coverage. By considering the charge distribution and electric field within the sputter, a quantitative model is then developed, which explains how the sputtering conditions affect the pretilt angles almost perfectly.

  10. Investigation of ion-beam machining methods for replicated x-ray optics

    NASA Technical Reports Server (NTRS)

    Drueding, Thomas W.

    1996-01-01

    The final figuring step in the fabrication of an optical component involves imparting a specified contour onto the surface. This can be expensive and time consuming step. The recent development of ion beam figuring provides a method for performing the figuring process with advantages over standard mechanical methods. Ion figuring has proven effective in figuring large optical components. The process of ion beam figuring removes material by transferring kinetic energy from impinging neutral particles. The process utilizes a Kaufman type ion source, where a plasma is generated in a discharge chamber by controlled electric potentials. Charged grids extract and accelerate ions from the chamber. The accelerated ions form a directional beam. A neutralizer outside the accelerator grids supplies electrons to the positive ion beam. It is necessary to neutralize the beam to prevent charging workpieces and to avoid bending the beam with extraneous electro-magnetic fields. When the directed beam strikes the workpiece, material sputters in a predicable manner. The amount and distribution of material sputtered is a function of the energy of the beam, material of the component, distance from the workpiece, and angle of incidence of the beam. The figuring method described here assumes a constant beam removal, so that the process can be represented by a convolution operation. A fixed beam energy maintains a constant sputtering rate. This temporally and spatially stable beam is held perpendicular to the workpiece at a fixed distance. For non-constant removal, corrections would be required to model the process as a convolution operation. Specific figures (contours) are achieved by rastering the beam over the workpiece at varying velocities. A unique deconvolution is performed, using series-derivative solution developed for the system, to determine these velocities.

  11. Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films.

    PubMed

    Karanth, Shivaprasad; Shanbhogue, Ganesh H; Nagendra, C L

    2005-10-10

    Silicon oxynitride thin films are prepared by ion-beam sputtering, and the optical properties and surface chemical composition are studied by spectrophotometric and x-ray photoelectron spectroscopy, respectively. It is seen that the films sputtered by use of nitrogen alone as the sputtering species from a silicon nitride target are completely transparent (k < 0.005) and have a refractive-index dispersion from 1.85 to 1.71 over the visible and near-infrared spectral regions, and the films show distinct spectral lines that are due to silicon, Si(2s), nitrogen, N(1s), and oxygen, O(1s). Sputter deposition of argon and of argon and nitrogen produces silicon-rich silicon oxynitride films that are absorbent and have high refractive indices. These films have a direct electronic transition, with a threshold energy of 1.75 eV. Electron irradiation transforms optically transparent silicon oxynitride films into silicon-rich silicon oxynitride films that have higher refractive indices and are optically absorbing owing to the presence of nonsaturated silicon in the irradiated films. The degradation in current responsivity of silicon photodetectors, under electron irradiation, is within 3% over the wavelength region from 450 to 750 nm, which is entirely due to the degradation of optical properties of silicon oxynitride antireflection coatings. PMID:16237933

  12. Beam shuttering interferometer and method

    DOEpatents

    Deason, Vance A.; Lassahn, Gordon D.

    1993-01-01

    A method and apparatus resulting in the simplification of phase shifting interferometry by eliminating the requirement to know the phase shift between interferograms or to keep the phase shift between interferograms constant. The present invention provides a simple, inexpensive means to shutter each independent beam of the interferometer in order to facilitate the data acquisition requirements for optical interferometry and phase shifting interferometry. By eliminating the requirement to know the phase shift between interferograms or to keep the phase shift constant, a simple, economical means and apparatus for performing the technique of phase shifting interferometry is provide which, by thermally expanding a fiber optical cable changes the optical path distance of one incident beam relative to another.

  13. Beam shuttering interferometer and method

    DOEpatents

    Deason, V.A.; Lassahn, G.D.

    1993-07-27

    A method and apparatus resulting in the simplification of phase shifting interferometry by eliminating the requirement to know the phase shift between interferograms or to keep the phase shift between interferograms constant. The present invention provides a simple, inexpensive means to shutter each independent beam of the interferometer in order to facilitate the data acquisition requirements for optical interferometry and phase shifting interferometry. By eliminating the requirement to know the phase shift between interferograms or to keep the phase shift constant, a simple, economical means and apparatus for performing the technique of phase shifting interferometry is provide which, by thermally expanding a fiber optical cable changes the optical path distance of one incident beam relative to another.

  14. Method for splitting low power laser beams

    SciTech Connect

    Pierscionek, B.K. )

    1990-04-01

    A new method for producing parallel rays from a laser beam using a cylindrical lens and pinholes is presented. This method can produce a greater number of emergent rays than using a {ital beam} {ital splitter}.

  15. Sputtering erosion in ion and plasma thrusters

    NASA Astrophysics Data System (ADS)

    Ray, Pradosh K.

    1995-08-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  16. Sputtering erosion in ion and plasma thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1995-01-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  17. Oxygen vacancy mediated enhanced photo-absorption from ZnO(0001) nanostructures fabricated by atom beam sputtering

    NASA Astrophysics Data System (ADS)

    Solanki, Vanaraj; Joshi, Shalik R.; Mishra, Indrani; Kabiraj, D.; Mishra, N. C.; Avasthi, D. K.; Varma, Shikha

    2016-08-01

    The nanoscale patterns created on the ZnO(0001) surfaces during atom beam irradiation have been investigated here for their photo absorption response. Preferential sputtering, during irradiation, promotes Zn-rich zones that serve as the nucleation centers for the spontaneous creation of nanostructures. Nanostructured surfaces with bigger (78 nm) nanodots, displaying hexagonal ordering and long ranged periodic behavior, show higher photo absorption and a ˜0.09 eV reduced bandgap. These nanostructures also demonstrate higher concentration of oxygen vacancies which are crucial for these results. The enhanced photo-response, as observed here, has been achieved in the absence of any dopant elements.

  18. Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process

    SciTech Connect

    Malobabic, Sina; Jupe, Marco; Ristau, Detlev

    2013-06-03

    Nowadays, Ion Beam Sputter (IBS) processes are very well optimized on an empirical basis. To achieve further progresses, a modification of the IBS process by guiding the coating material using an axial magnetic field and an additional electrical field has been studied. The electro-magnetic (EM) field leads to a significant change in plasma properties and deposition rate distributions, whereas an increase in deposition rate along the centerline of the axial EM field around 150% was observed. These fundamental studies on the prototype are the basis for the development of an applicable and workable design of a separation device.

  19. Improvement of electrical and optical properties of molybdenum oxide thin films by ultralow pressure sputtering method

    SciTech Connect

    Sook Oh, Myeong; Seob Yang, Bong; Ho Lee, Jong; Ha Oh, Seong; Soo Lee, Ung; Jang Kim, Yoon; Joon Kim, Hyeong; Soo Huh, Myung

    2012-05-15

    In this work, we investigated the structural, electrical and optical properties of molybdenum oxide thin films deposited by the reactive dc magnetron sputtering method. The molybdenum oxide films were prepared at sputtering pressures ranging from 6.7 x 10{sup -1} to 6.7 x 10{sup -2} Pa. In order to promote their electrical conductivity, all the deposited MoO{sub x} films were annealed in Ar ambient at 450 deg. C for 8 h. The resistivity of the MoO{sub x} films varied from 10{sup -4} to 10{sup -2}{Omega} cm depending on the O{sub 2} content in the sputtering ambient. The lowering of the resistivity of the MoO{sub 2} films was mainly attributed to the formation of a monoclinic MoO{sub 2} polycrystalline phase. As the sputtering pressure decreased, the content of monoclinic polycrystalline MoO{sub 2} phase increased, resulting in low resistivity films. The formation of the dominant MoO{sub 2} phase at lower sputtering pressures was attributed to the stress induced crystallization. The post-deposition annealed (PDA) MoO{sub x} film, deposited at an ultralow sputtering pressure (6.7 x 10{sup -2} Pa) and O{sub 2} content of 40%, had an atomic ratio of O to Mo {approx_equal} 2.85 and was highly transparent and conductive: the transmittance in the visible wavelength range of 400-500 nm was about 73% and the resistivity was 1.05 x 10{sup -3}{Omega} cm. This result is superior to those of MoO{sub x} films epitaxially grown by the pulse laser deposition method.

  20. Fabrication of nanogradient coatings for laser devices using the method of magnetron sputtering

    SciTech Connect

    Abramov, N F; Volpyan, O D; Obod, Yu A; Dronskii, R V

    2013-09-30

    Significant advantages of the magnetron sputtering method for producing complex high-quality optical coatings for laser devices are shown. Technology aspects of efficient fabrication of such coatings are considered. The capabilities of the developed automated technological and control equipment are described. (nanogradient dielectric coatings and metamaterials)

  1. Sputtered pin amorphous silicon semi-conductor device and method therefor

    DOEpatents

    Moustakas, Theodore D.; Friedman, Robert A.

    1983-11-22

    A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

  2. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    NASA Astrophysics Data System (ADS)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  3. Noble gas incorporation in sputtered and ion beam assisted grown silicon films

    SciTech Connect

    van Veen, A. . Inter-Faculty Reactor Inst.); Greuter, M.J.W.; Niesen, L. . Dept. of Physics); Nielsen, B.; Lynn, K.G. )

    1991-01-01

    Gas desorption measurements have been performed on sputter deposited silicon films. The sputter gas was argon or krypton. Parameters influencing the incorporation process e.g. bias voltage, substrate temperature and arrival rate ratio of silicon and noble gas atoms have been systematically varied. The films, a-Si and c-Si, have been characterised by various techniques for composition and defect analysis. A model has been applied to describe the composition of the growing silicon layer. Underlying mechanisms like gas-gas sputtering have been studied in separate ion implantation experiments. For a-Si concentrations as high as 6% Ar and Kr have been found. An important effect is the injection of self-interstitial atoms caused by the low energy heavy ion bombardment. It causes the layer to grow without large open volume defects.

  4. Noble gas incorporation in sputtered and ion beam assisted grown silicon films

    SciTech Connect

    van Veen, A.; Greuter, M.J.W.; Niesen, L.; Nielsen, B.; Lynn, K.G.

    1991-12-31

    Gas desorption measurements have been performed on sputter deposited silicon films. The sputter gas was argon or krypton. Parameters influencing the incorporation process e.g. bias voltage, substrate temperature and arrival rate ratio of silicon and noble gas atoms have been systematically varied. The films, a-Si and c-Si, have been characterised by various techniques for composition and defect analysis. A model has been applied to describe the composition of the growing silicon layer. Underlying mechanisms like gas-gas sputtering have been studied in separate ion implantation experiments. For a-Si concentrations as high as 6% Ar and Kr have been found. An important effect is the injection of self-interstitial atoms caused by the low energy heavy ion bombardment. It causes the layer to grow without large open volume defects.

  5. Low-Energy Sputtering Research

    NASA Technical Reports Server (NTRS)

    Ray, P. K.; Shutthanandan, V.

    1999-01-01

    An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

  6. Tunneling behavior in ion-assist ion-beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions

    SciTech Connect

    Singh, Braj Bhusan; Chaudhary, Sujeet; Pandya, Dinesh K.

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Dual ion beam sputtered MgO barrier for MTJs. ► ∼12% TMR at 60 K. ► Glazman and Matveev model fitted for quantification of elastic and inelastic tunneling conductance through barrier. -- Abstract: Magnetic tunnel junctions (MTJs) consisting of CoFe and NiFe as ferromagnetic electrodes and MgO as insulating barrier fabricated through in situ shadow masking employing ion beam sputtering are studied for their tunneling magnetoresistance (TMR) and temperature dependence of the tunneling conductance behavior. The tunneling characteristics of these MTJs exhibited barrier height of 0.7 eV and width of 3.3 nm. These MTJs possessed ∼12% TMR at 60 K. The temperature dependence of conductance behavior of these junctions have revealed finite contributions from inelastic tunneling through the barrier via hopping conduction via present localized states which arise due to the presence of ionic interstitial defects in the MgO oxide barrier. The fitting of the data reveals that thirteenth order of hopping conduction is operative through MgO barrier.

  7. Opto-structural studies of well-dispersed silicon nano-crystals grown by atom beam sputtering.

    PubMed

    Saxena, Nupur; Kumar, Pragati; Kabiraj, Debulal; Kanjilal, Dinakar

    2012-01-01

    Synthesis and characterization of nano-crystalline silicon grown by atom beam sputtering technique are reported. Rapid thermal annealing of the deposited films is carried out in Ar + 5% H2 atmosphere for 5 min at different temperatures for precipitation of silicon nano-crystals. The samples are characterized for their optical and structural properties using various techniques. Structural studies are carried out by micro-Raman spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy (TEM), high resolution transmission electron microscopy, and selected area electron diffraction. The optical properties are studied by photoluminescence and UV-vis absorption spectroscopy, and bandgaps are evaluated. The bandgaps are found to decrease after rapid thermal treatment. The micro-Raman studies show the formation of nano-crystalline silicon in as-deposited as well as annealed films. The shifting and broadening in Raman peak suggest formation of nano-phase in the samples. Results of micro-Raman, photoluminescence, and TEM studies suggest the presence of a bimodal crystallite size distribution for the films annealed at higher temperatures. The results show that atom beam sputtering is a suitable technique to synthesize nearly mono-dispersed silicon nano-crystals. The size of the nano-crystals may be controlled by varying annealing parameters. PMID:23031449

  8. Opto-structural studies of well-dispersed silicon nano-crystals grown by atom beam sputtering

    NASA Astrophysics Data System (ADS)

    Saxena, Nupur; Kumar, Pragati; Kabiraj, Debulal; Kanjilal, Dinakar

    2012-10-01

    Synthesis and characterization of nano-crystalline silicon grown by atom beam sputtering technique are reported. Rapid thermal annealing of the deposited films is carried out in Ar + 5% H2 atmosphere for 5 min at different temperatures for precipitation of silicon nano-crystals. The samples are characterized for their optical and structural properties using various techniques. Structural studies are carried out by micro-Raman spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy (TEM), high resolution transmission electron microscopy, and selected area electron diffraction. The optical properties are studied by photoluminescence and UV-vis absorption spectroscopy, and bandgaps are evaluated. The bandgaps are found to decrease after rapid thermal treatment. The micro-Raman studies show the formation of nano-crystalline silicon in as-deposited as well as annealed films. The shifting and broadening in Raman peak suggest formation of nano-phase in the samples. Results of micro-Raman, photoluminescence, and TEM studies suggest the presence of a bimodal crystallite size distribution for the films annealed at higher temperatures. The results show that atom beam sputtering is a suitable technique to synthesize nearly mono-dispersed silicon nano-crystals. The size of the nano-crystals may be controlled by varying annealing parameters.

  9. Improved beam propagation method equations.

    PubMed

    Nichelatti, E; Pozzi, G

    1998-01-01

    Improved beam propagation method (BPM) equations are derived for the general case of arbitrary refractive-index spatial distributions. It is shown that in the paraxial approximation the discrete equations admit an analytical solution for the propagation of a paraxial spherical wave, which converges to the analytical solution of the paraxial Helmholtz equation. The generalized Kirchhoff-Fresnel diffraction integral between the object and the image planes can be derived, with its coefficients expressed in terms of the standard ABCD matrix. This result allows the substitution, in the case of an unaberrated system, of the many numerical steps with a single analytical step. We compared the predictions of the standard and improved BPM equations by considering the cases of a Maxwell fish-eye and of a Luneburg lens. PMID:18268554

  10. Broad, intense, quiescent beam of singly charged metal ions obtained by extraction from self-sputtering plasma far above the runaway threshold

    SciTech Connect

    Anders, Andre; Oks, Efim

    2009-05-19

    Dense metal plasmas obtained by self-sputtering far above the runway threshold are well suited to generate intense quiescent ion beams. The dilemma of high current density and charge state purity can be solved when using target materials of low surface binding energy by utilizing non-resonant exchange reactions before ion extraction. Space-charge-limited quiescent beams of Cu+, Zn+, and Bi+ with ~;;10 mA/cm2 have been obtained through multi-aperture gridded ion extraction up to 45 kV from self-sputtering plasmas.

  11. Electron beam induced coloration and luminescence in layered structure of WO{sub 3} thin films grown by pulsed dc magnetron sputtering

    SciTech Connect

    Karuppasamy, A.; Subrahmanyam, A.

    2007-06-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO{sub 3} film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device.

  12. Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

    SciTech Connect

    Gawlitza, Peter; Cambie, Rossana; Dhuey, Scott; Gullikson, Eric; Warwick, Tony; Braun, Stefan; Yashchuk, Valeriy; Padmore, Howard

    2012-01-23

    Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. To minimize the shadowing effects we used an ionbeam sputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr{sup +} ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the Linear Continuous Model of film growth.

  13. A Comparative High-Resolution Electron Microscope Study of Ag Clusters Produced by a Sputter-Gas Aggregation and Ion Cluster Beam Technique

    NASA Astrophysics Data System (ADS)

    Hohl, Georg-Friedrich; Hihara, Takehiko; Sakurai, Masaki; Oishi, Takashi; Wakoh, Kimio; Sumiyama, Kenji; Suzuki, Kenji

    1994-03-01

    Ag clusters were formed by a sputter-gas-aggregation process [H. Haberland et al..: J. Vac. Sci. Technol. A 10 (1992) 3266] and the ionized cluster beam (ICB) [T. Takagi: Ionized-Cluster Beam Deposition and Epitaxy (Noyes, Park Ridge, 1988)] technique. The Ag clusters deposited on collodion-coated microgrids were investigated by high-resolution transmission electron microscopy. The diameter of those clusters, d, ranges from 1 nm up to about 10 nm for specimens produced by the sputter-gas aggregation technique, depending on the sputter condition and the deposition time. Comparable times of the ICB deposition lead to a broader distribution up to d≈20 nm, suggesting the formation of islands with extremely flat shapes. High percentages of crystalline particles obtained by both techniques are either single crystals or multiple twins with clear lattice images.

  14. Solar Ion Sputter Deposition in the Lunar Regolith: Experimental Simulation Using Focused-Ion Beam Techniques

    NASA Technical Reports Server (NTRS)

    Christoffersen, R.; Rahman, Z.; Keller, L. P.

    2012-01-01

    As regions of the lunar regolith undergo space weathering, their component grains develop compositionally and microstructurally complex outer coatings or "rims" ranging in thickness from a few 10 s to a few 100's of nm. Rims on grains in the finest size fractions (e.g., <20 m) of mature lunar regoliths contain optically-active concentrations of nm size metallic Fe spherules, or "nanophase Fe(sup o)" that redden and attenuate optical reflectance spectral features important in lunar remote sensing. Understanding the mechanisms for rim formation is therefore a key part of connecting the drivers of mineralogical and chemical changes in the lunar regolith with how lunar terrains are observed to become space weathered from a remotely-sensed point of view. As interpreted based on analytical transmission electron microscope (TEM) studies, rims are produced from varying relative contributions from: 1) direct solar ion irradiation effects that amorphize or otherwise modify the outer surface of the original host grain, and 2) nanoscale, layer-like, deposition of extrinsic material processed from the surrounding soil. This extrinsic/deposited material is the dominant physical host for nanophase Fe(sup o) in the rims. An important lingering uncertainty is whether this deposited material condensed from regolith components locally vaporized in micrometeorite or larger impacts, or whether it formed as solar wind ions sputtered exposed soil and re-deposited the sputtered ions on less exposed areas. Deciding which of these mechanisms is dominant, or possibility exclusive, has been hampered because there is an insufficient library of chemical and microstructural "fingerprints" to distinguish deposits produced by the two processes. Experimental sputter deposition / characterization studies relevant to rim formation have particularly lagged since the early post-Apollo experiments of Hapke and others, especially with regard to application of TEM-based characterization techniques. Here

  15. Technology and applications of broad-beam ion sources used in sputtering. Part I. Ion source technology

    SciTech Connect

    Kaufman, H.R.; Cuomo, J.J.; Harper, J.M.E.

    1982-09-01

    The technology of broad-beam ion sources used in sputtering applications is reviewed. The most frequently used discharge chambers are described, together with procedures for predicting performance. A new, compact ion source is described. Ion acceleration is reviewed, with particular emphasis on recent low-energy techniques. Some of these techniques include three-grid, small-hole two-grid, and one-grid ion optics. A new material for fabrication of high-precision ion optics is silicon. Because no stresses are introduced with the etching techniques used, the finished grid can be held to very close tolerances. A recent innovation for sputtering applications is the use of Hall-current acceleration. This technique uses a magnetic field interacting with an electron current to provide the accelerating electric field, thereby avoiding the usual space-charge limit on ion current density that is associated with gridded optics. Electron emission is also reviewed, with new hollow cathodes promising improved lifetimes. The overall picture is one of greatly improved ion source capability, with particularly large improvements in low-energy ion current densities.

  16. Optical switching properties of VOx thin films deposited on Si3N4 substrates using ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Lu, Jianing; Hu, Ming; Liang, Jiran; Chen, Tao; Tan, Lei

    2009-07-01

    Vanadium dioxide (VO2) thin films, for their property of metal-insulator transition (MIT), have drawn many researchers' attention on optical devices study. Nowadays it is complicated to fabricate single-phase VO2) thin films. Ion beam sputtering is adopted to deposit VOx thin films (main component is VO2) ) on Si3N4, while sputtering power, substrate temperature and partial oxygen pressure of VOx are adjusted. Then annealing technology is utilized to improve the parameter property of VOx thin films. The thin films are tested by AFM, XPS, XRD, Fourier transform infrared spectrometry, tunable semiconductor laser and optical power meter. Both temperature-driven phasetransition and photoexcitation phasetransition of VOx thin films are applied. The samples are heated from 20°C to 80°C, discovering that the phasetransition temperature is about 59°C and the value of resistance before the phasetransition is two orders of magnitude over the value of resistance after the phasetransition. At the wavelength of 1550 nm, the transmission is from 32% to 1%. Besides, the extinction ratio of the thin films sample is obtained. The optical properties show that the VOx thin films have an apparent switching effect in the optical communication fields.

  17. Structural analysis of the outermost hair surface using TOF-SIMS with gas cluster ion beam sputtering.

    PubMed

    Lshikawa, Kazutaka; Okamoto, Masayuki; Aoyagi, Satoka

    2016-06-01

    A hair cuticle, which consists of flat overlapping scales that surround the hair fiber, protects inner tissues against external stimuli. The outermost surface of the cuticle is covered with a thin membrane containing proteins and lipids called the epicuticle. In a previous study, the authors conducted a depth profile analysis of a hair cuticle's amino acid composition to characterize its multilayer structure. Time-of-flight secondary ion mass spectrometry with a bismuth primary ion source was used in combination with the C60 sputtering technique for the analysis. It was confirmed that the lipids and cysteine-rich layer exist on the outermost cuticle surface, which is considered to be the epicuticle, though the detailed structure of the epicuticle has not been clarified. In this study, depth profile analysis of the cuticle surface was conducted using the argon gas cluster ion beam (Ar-GCIB) sputtering technique, in order to characterize the structure of the epicuticle. The shallow depth profile of the cuticle surface was investigated using an Ar-GCIB impact energy of 5 keV. Compared to the other amino acid peaks rich in the epicuticle, the decay of 18-methyleicosanic acid (18-MEA) thiolate peak was the fastest. This result suggests that the outermost surface of the hair is rich in 18-MEA. In conclusion, our results indicate that the outermost surfaces of cuticles have a multilayer (lipid and protein layers), which is consistent with the previously proposed structure. PMID:26822506

  18. Ferroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Silva, J. P. B.; Kamakshi, Koppole; Sekhar, K. C.; Moreira, J. Agostinho; Almeida, A.; Pereira, M.; Gomes, M. J. M.

    2016-05-01

    In this work, 150 nm thick polycrystalline BaTiO3 (BTO) films were deposited on Pt/TiO2/SiO2/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current-voltage (I-V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P-V loops with remnant polarization (Pr) of 5.7 μC/cm2 and a coercive electric field (Ec) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated.

  19. Tunneling conductance studies in the ion-beam sputtered CoFe/Mg/MgO/NiFe magnetic tunnel junctions

    SciTech Connect

    Singh, Braj Bhusan; Chaudhary, Sujeet

    2013-06-03

    Magnetic tunnel junctions consisting of CoFe(10 nm)/Mg(1 nm)/MgO(3.5 nm)/NiFe(10 nm) are grown at room temperature using dual ion beam sputtering via in-situ shadow masking. The effective barrier thickness and average barrier height are estimated to be 3.5 nm (2.9 nm) and 0.69 eV (1.09 eV) at 290 K (70 K), respectively. The tunnel magnetoresistance value of 0.2 % and 2.3 % was observed at 290 K and 60 K, respectively. The temperature dependence of tunneling conductance revealed the presence of localized states present within the forbidden gap of the MgO barrier leading to finite inelastic spin independent tunneling contributions, which degrade the TMR value.

  20. Structural and magnetic properties of ion beam sputtered Co2FeAl full Heusler alloy thin films

    NASA Astrophysics Data System (ADS)

    Husain, Sajid; Kumar, Ankit; Chaudhary, Sujeet; Svedlindh, Peter

    2016-05-01

    Co2FeAl full Heusler alloy thin films grown at different temperatures on Si(100) substrates using ion beam sputtering system have been investigated. X-ray diffraction (XRD) patterns revealed the A2 disordered phase in these films. The deduced lattice parameter slightly increases with increase in the growth temperature. The saturation magnetization it is found to increase with increase in growth temperature. The magnetic anisotropy has been studied using angle dependent magneto-optical Kerr effect. In the room temperature deposited film, the combination of cubic and uniaxial anisotropy have been observed with weak in-plane uniaxial anisotropy which increases with growth temperature. The uniaxial anisotropy is attributed to the anisotropic interfacial bonding in these Co2FeAl /Si(100) heterostructures.

  1. Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low Earth orbit

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Rutledge, S. K.; Swec, D. M.; Nahra, H. K.

    1985-01-01

    Ion beam sputter-deposited thin films of Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of a fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low Earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

  2. Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low earth orbit

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Rutledge, S. K.; Swec, D. M.; Nahra, H. K.

    1985-01-01

    Ion beam sputter-deposited thin films at Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board Shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

  3. Photocatalytic activity of nanosized TiO2 thin film prepared by magnetron sputtering method.

    PubMed

    Kang, Sang-Jun; Kim, Ki-Joong; Chung, Min-Chul; Jung, Sang-Chul; Boo, Su-Il; Cho, Soon Kye; Jeong, Woon-Jo; Ahn, Ho-Geun

    2011-02-01

    Nanosized TiO2 thin film on the substrate such as stainless steel plate and slide glass film were prepared by magnetron sputtering method, and these TiO2 thin films were characterized by field emission-scanning electron microscopy (FE-SEM). Photocatalytic activity for Methyl-ethyl-ketone (MEK) and acetaldehyde were measured using a closed circulating reaction system through the various ultra violet (UV) sources. From the results of SEM images, nanosized TiO2 thin film was uniformly coated on slide glass, ranging from 360 nm to 370 nm. Photocatalytic activity of MEK over TiO2 thin film on stainless steel plate did not occur by UV-A irradiation, but was efficiently decomposed by UV-B and UV-C. Also, acetaldehyde could be decomposed than MEK. The effect of sputtering conditions on their structure and photocatalytic activities were investigated in detail. PMID:21456269

  4. A new Cs sputter ion source with polyatomic ion beams for SIMS applications.

    SciTech Connect

    Belykh, S. F.; Palitsin, V. V.; Veryovkin, I. V.; Kovarsky, A. P.; Chang, R. J. H.; Adriaens, A.; Dowsett, M. G.; Adams, F.; Materials Science Division; Univ. Warwick; Ioffe Phys.-Tech. Inst.; Ghent Univ.; Univ. Antwerp

    2007-08-02

    A simple design for a cesium sputter ion source compatible with vacuum and ion-optical systems as well as with electronics of the commercially available Cameca IMS-4f instrument is reported. This ion source has been tested with the cluster primary ions of Si{sub n}{sup -} and Cu{sub n}{sup -}. Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of the analytical capabilities of the secondary ion mass spectrometry instrument due to the nonadditive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ones with the same impact energy.

  5. New Cs sputter ion source with polyatomic ion beams for secondary ion mass spectrometry applications

    SciTech Connect

    Belykh, S. F.; Palitsin, V. V.; Veryovkin, I. V.; Kovarsky, A. P.; Chang, R. J. H.; Adriaens, A.; Dowsett, M. G.; Adams, F.

    2007-08-15

    A simple design for a cesium sputter ion source compatible with vacuum and ion-optical systems as well as with electronics of the commercially available Cameca IMS-4f instrument is reported. This ion source has been tested with the cluster primary ions of Si{sub n}{sup -} and Cu{sub n}{sup -}. Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of the analytical capabilities of the secondary ion mass spectrometry instrument due to the nonadditive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ones with the same impact energy.

  6. Electrostatic energy analyzer measurements of low energy zirconium beam parameters in a plasma sputter-type negative ion source

    SciTech Connect

    Malapit, Giovanni M.; Mahinay, Christian Lorenz S.; Poral, Matthew D.; Ramos, Henry J.

    2012-02-15

    A plasma sputter-type negative ion source is utilized to produce and detect negative Zr ions with energies between 150 and 450 eV via a retarding potential-type electrostatic energy analyzer. Traditional and modified semi-cylindrical Faraday cups (FC) inside the analyzer are employed to sample negative Zr ions and measure corresponding ion currents. The traditional FC registered indistinct ion current readings which are attributed to backscattering of ions and secondary electron emissions. The modified Faraday cup with biased repeller guard ring, cut out these signal distortions leaving only ringings as issues which are theoretically compensated by fitting a sigmoidal function into the data. The mean energy and energy spread are calculated using the ion current versus retarding potential data while the beam width values are determined from the data of the transverse measurement of ion current. The most energetic negative Zr ions yield tighter energy spread at 4.11 eV compared to the least energetic negative Zr ions at 4.79 eV. The smallest calculated beam width is 1.04 cm for the negative Zr ions with the highest mean energy indicating a more focused beam in contrast to the less energetic negative Zr ions due to space charge forces.

  7. Particle beam injector system and method

    DOEpatents

    Guethlein, Gary

    2013-06-18

    Methods and devices enable coupling of a charged particle beam to a radio frequency quadrupole accelerator. Coupling of the charged particle beam is accomplished, at least in-part, by relying on of sensitivity of the input phase space acceptance of the radio frequency quadrupole to the angle of the input charged particle beam. A first electric field across a beam deflector deflects the particle beam at an angle that is beyond the acceptance angle of the radio frequency quadrupole. By momentarily reversing or reducing the established electric field, a narrow portion of the charged particle beam is deflected at an angle within the acceptance angle of the radio frequency quadrupole. In another configuration, beam is directed at an angle within the acceptance angle of the radio frequency quadrupole by the first electric field and is deflected beyond the acceptance angle of the radio frequency quadrupole due to the second electric field.

  8. Reactive ion-beam-sputtering of fluoride coatings for the UV/VUV range

    NASA Astrophysics Data System (ADS)

    Schink, Harald; Kolbe, Jurgen; Zimmermann, F.; Ristau, Detlev; Welling, Herbert

    1991-06-01

    Fluoride coatings produced by thermal evaporation suffer from high scatter losses ageing and cracking due to high tensile stress. These problems impose severe limitations to the production of low loss multilayer coatings for the VUV range. A key position for improved performance is the microstructure of the layers. The aim of our investigations is to improve the microstructure of A1F3- and LaF3-'' films by ionbeamsputtering. Scatter measurements of single layers revealed lower values for lBS than for boat evaporation. Unfortunately sputtered fluoride films nave high absorption losses caused by decomposition of the coating material. By sputtering in reactive atmospheres and annealing we were able to reduce the absorption losses significantly. Antireflective as well as high reflective coatings were produced. Reflection and transmission values were obtained with a VUV-spectrophotometer. Damage tests at the 193 mu ArF laser wavelength were performed at the Laser-Laboratorium Gttingen. Key words: ion-beamsputtering fluoride films UVcoatings VUV-coatings color-center laser damage A]. F3 MgF2 LaF3. 1.

  9. Focused ion beam source method and apparatus

    DOEpatents

    Pellin, Michael J.; Lykke, Keith R.; Lill, Thorsten B.

    2000-01-01

    A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

  10. Adherence of ion beam sputter deposited metal films on H-13 steel

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1980-01-01

    An electron bombardment argon ion source sputter deposited 17 metals and metal oxides on H-13 steel. The films ranged 1 to 8 micrometers in thickness and their adherence was generally greater than the capacity of the measuring device; adherence quality depended on proper precleaning of the substrate before deposition. N2 or air was introduced for correct stoichiometry in metallic compounds. Au, Ag, MgO, and Ta5Si3 films 8 microns thick have bond strength equal to 1 micron coatings; the bond strength of pure metallic films up to 5 microns thick was greater than the epoxy to film bond (8000 psi). The results of exposures of coated material to temperatures up to 700 C are presented.

  11. Auger electron nanoscale mapping and x-ray photoelectron spectroscopy combined with gas cluster ion beam sputtering to study an organic bulk heterojunction

    SciTech Connect

    Heon Kim, Seong; Heo, Sung; Ihn, Soo-Ghang; Yun, Sungyoung; Hwan Park, Jong; Chung, Yeonji; Lee, Eunha; Park, Gyeongsu; Yun, Dong-Jin

    2014-06-16

    The lateral and vertical distributions of organic p/n bulk heterojunctions for an organic solar cell device are, respectively, investigated using nanometer-scale Auger electron mapping and using X-ray photoelectron spectroscopy (XPS) with Ar gas cluster ion beam (GCIB) sputtering. The concentration of sulfur, present only in the p-type material, is traced to verify the distribution of p-type (donor) and n-type (acceptor) materials in the blended structure. In the vertical direction, a considerable change in atomic sulfur concentration is observed using XPS depth profiling with Ar GCIB sputtering. In addition, Auger electron mapping of sulfur reveals the lateral 2-dimensional distribution of p- and n-type materials. The combination of Auger electron mapping with Ar GCIB sputtering should thereby allow the construction of 3-dimensional distributions of p- and n-type materials in organic photovoltaic cells.

  12. Optical and structural properties of YF3 thin films prepared by ion-assisted deposition or ion beam sputtering techniques

    NASA Astrophysics Data System (ADS)

    Robic, Jean-Yves; Muffato, Viviane; Chaton, Patrick; Ida, Michel; Berger, M.

    1994-11-01

    The properties of materials in thin films are strongly dependent on the coating techniques and on the technological parameters. We have investigated about some optical and structural properties of YF3 thin films prepared using different energetic techniques: ion assisted deposition (IAD) and ion beam sputtering (IBS). The properties of the thin films obtained by these energetic processes are compared to the properties obtained by classical electron beam evaporation. In classical evaporation, the optical properties in the visible range depend on the temperature of the deposition and on the incidence of the vapor flux. The optical properties are correlated with the density of the films measured by Rutherford backscattering. In the case of IAD, the influence on optical properties, both in the visible and in the infrared range, of some technological parameters (pressure, ion energy and ion density) are illustrated. The refractive index and the extinction coefficient have been obtained by spectrophotometry. Furthermore, we show that IBS may lead to YF3 layers of high density.

  13. Sputter deposition of metallic thin film and directpatterning

    SciTech Connect

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  14. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Wang, R. F.; Zhang, J.; Li, H. S.; Zhang, J.; Qiu, F.; Yang, J.; Wang, C.; Yang, Y.

    2016-07-01

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer–Weber mode instead of the Stranski–Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  15. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    PubMed

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure. PMID:27302495

  16. Correlation study of structural, optical and electrical properties of amorphous carbon thin films prepared by ion beam sputtering deposition technique

    NASA Astrophysics Data System (ADS)

    Mohagheghpour, E.; Rajabi, M.; Gholamipour, R.; Larijani, M. M.; Sheibani, S.

    2016-01-01

    The correlation of structural, optical and electrical properties of amorphous carbon thin films deposited by ion beam sputtering technique on the glass substrate was investigated. The film thickness varied over a wide range from 57 to 408 nm by controlling the deposition time. Raman spectra and X-ray photoelectron spectroscopy showed that the size of the graphite crystallites with sp2 bonds (La) and the sp3/sp2 fraction are smaller than 1.5 nm and 1.4, respectively. The values of ID/IG ratio, the 'G' peak position, and surface roughness depend on the film thickness; all of them increased by increasing film thickness up to 360 nm, and then decreased by increasing time and thickness. Furthermore, the resistivity followed similar trends of these structural properties. According to Tauc equation the optical band gap of these films was in the range of 3.2-3.9 eV. A broad emission peak at around 2.94 eV was observed on a photoluminescence spectrum of amorphous carbon film with highest resistivity.

  17. The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Aliev, V. S.; Gerasimova, A. K.; Kruchinin, V. N.; Gritsenko, V. A.; Prosvirin, I. P.; Badmaeva, I. A.

    2016-08-01

    Non-stoichiometric HfOx films of different chemical composition (x < 2) were fabricated by ion-beam sputtering deposition (IBSD) at room temperature. The ratio of O and Hf atoms in films x was varied by setting the O2 partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf4O7 suboxide and stoichiometric HfO2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf4O7 suboxide concentration is maximal at x = 1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO2, when annealed at high temperature.

  18. Study of structural and electrical properties of thin NiOx films prepared by ion beam sputtering of Ni and subsequent thermo-oxidation

    NASA Astrophysics Data System (ADS)

    Horak, P.; Lavrentiev, V.; Bejsovec, V.; Vacik, J.; Danis, S.; Vrnata, M.; Khun, J.

    2013-11-01

    Nickel oxide thin films were prepared by thermal annealing of thin Ni films (thickness ca 47 nm) deposited by ion beam sputtering. The thermal annealing was performed at 350 °C and 400 °C with elected time (1-7 hours) in a quartz furnace opened to air. During annealing the samples underwent structural changes, as well as changes of their electrical properties. The structural properties (surface morphology and occurrence of crystalline phases) were analyzed by the AFM and XRD methods, O and Ni depth concentration profiles by the NRA method, and electrical properties (sheet resistance) by the van der Pauw 4-point technique. The sheet resistance ( R S ) of the as-deposited sample was found to be 12.03 Ω/□; after open air thermal annealing at 350 °C for 1 h the value was found to be almost the same, 11.67 Ω/□. After 2 h of annealing, however, a sharp increase in the sheet resistance ( R S = 1.46 MΩ/□) was observed. At this stage the deposit formed largely oxidized Ni layer with a distinct polycrystalline structure. The sharp increase of sheet resistance was ascribed to the oxidation of the Ni layer, leaving only a smaller amount of isolated Ni particles unoxidized. Almost complete oxidation was found after 7 h of annealing at 350 °C. At 400 °C was almost complete oxidation recorded already after 1 h of annealing.

  19. Comparison of Methods for Evaluation of the Bactericidal Activity of Copper-Sputtered Surfaces against Methicillin-Resistant Staphylococcus aureus

    PubMed Central

    Rio, Laura; Kusiak-Nejman, Ewelina; Kiwi, John; Bétrisey, Bertrand; Pulgarin, César; Trampuz, Andrej

    2012-01-01

    Bacteria can survive on hospital textiles and surfaces, from which they can be disseminated, representing a source of health care-associated infections (HCAIs). Surfaces containing copper (Cu), which is known for its bactericidal properties, could be an efficient way to lower the burden of potential pathogens. The antimicrobial activity of Cu-sputtered polyester surfaces, obtained by direct-current magnetron sputtering (DCMS), against methicillin-resistant Staphylococcus aureus (MRSA) was tested. The Cu-polyester microstructure was characterized by high-resolution transmission electron microscopy to determine the microstructure of the Cu nanoparticles and by profilometry to assess the thickness of the layers. Sputtering at 300 mA for 160 s led to a Cu film thickness of 20 nm (100 Cu layers) containing 0.209% (wt/wt) polyester. The viability of MRSA strain ATCC 43300 on Cu-sputtered polyester was evaluated by four methods: (i) mechanical detachment, (ii) microcalorimetry, (iii) direct transfer onto plates, and (iv) stereomicroscopy. The low efficacy of mechanical detachment impeded bacterial viability estimations. Microcalorimetry provided only semiquantitative results. Direct transfer onto plates and stereomicroscopy seemed to be the most suitable methods to evaluate the bacterial inactivation potential of Cu-sputtered polyester surfaces, since they presented the least experimental bias. Cu-polyester samples sputtered for 160 s by DCMS were further tested against 10 clinical MRSA isolates and showed a high level of bactericidal activity, with a 4-log10 reduction in the initial MRSA load (106 CFU) within 1 h. Cu-sputtered polyester surfaces might be of use to prevent the transmission of HCAI pathogens. PMID:22983970

  20. Surface treatment method for 1/f noise suppression in reactively sputtered nickel oxide film

    NASA Astrophysics Data System (ADS)

    Kim, Dong Soo; Park, Seung-Man; Lee, Hee Chul

    2012-07-01

    A surface treatment method combined with O2 plasma treatment and Ar+ bombardment is proposed for 1/f noise suppression in a reactively sputtered NiO film as a micro-bolometer sensing material. The 1/f noise power spectral density on a sample prepared by the proposed surface treatment method prior to the contact formation is suppressed to a level roughly 18 times lower than that on an untreated sample. The improved noise characteristic can be ascribed to the cooperative effects of the two steps in the proposed surface treatment method. In its effects, the oxygen plasma treatment is supposed to increase the Ni3+ component on the surface of the NiO film, which in turn increases the hole concentration on the surface. Additional Ar+ bombardment is expected to remove contaminants on the surface of the NiO film, leading to a low contact resistance.

  1. Tribological properties of metal doped a-C film by RF magnetron sputtering method

    SciTech Connect

    Park, Yong Seob; Jung, Tae-Hwan; Lim, Dong-Gun; Park, Young; Kim, Hyungchul; Choi, Won Seok

    2012-10-15

    We deposited various metal doped amorphous carbon (a-C:Me) films by radio frequency (RF) magnetron co-sputtering method. Tungsten (W), molybdenum (Mo), and chromium (Cr) were used as the doping metals in a-C film. The applied power on carbon and metal (W, Mo, and Cr) target were 150 W and 40 W, respectively. a-C:Me films exhibited smooth and uniform surface roughness and the hardness over 15 GPa. Specially, a-C:W film showed the maximum hardness of 18.5 GPa. The coefficient of friction of a-C:W film is relatively lower than that of other films and the critical load value of a-C:W film is higher. These results are related to the concentration of metal in the carbon matrix by the difference of sputtering yield and the change of the structure by the metal bonding. Consequently, W metal is good candidate as the doping metal for the improvement of tribological characteristics.

  2. Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation

    NASA Astrophysics Data System (ADS)

    Ristau, Detlev; Gunster, Stefan; Bosch, Salvador; Duparre, Angela; Masetti, Enrico; Ferre-Borrull, Josep; Kiriakidis, George; Peiro, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

    2002-06-01

    Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approx1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nmrms) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

  3. Nanosecond laser-induced damage at different initial temperatures of Ta{sub 2}O{sub 5} films prepared by dual ion beam sputtering

    SciTech Connect

    Xu, Cheng Jia, Jiaojiao; Fan, Heliang; Qiang, Yinghuai; Liu, Jiongtian; Yang, Di; Hu, Guohang; Li, Dawei

    2014-08-07

    Ta{sub 2}O{sub 5} films were deposited by dual ion beam sputtering method. The nanosecond laser-induced damage threshold (LIDT) at different initial temperatures and time of the films was investigated by an in situ high temperature laser-induced damage testing platform. It was shown that, when the initial temperature increased from 298 K to 383 K, the LIDT at 1064 nm and 12 ns significantly decreased by nearly 14%. Then the LIDT at 1064 nm and 12 ns decreased slower with the same temperature increment. Different damage morphologies were found at different initial temperatures. At low initial temperatures, it was the defects-isolated damage while at high initial temperatures it was the defects-combined damage. The theoretical calculations based on the defect-induced damage model revealed that both the significant increase of the highest temperature and the duration contributed to the different damage morphologies. With the initial temperature being increased, the thermal-stress coupling damage mechanism transformed gradually to the thermal dominant damage mechanism.

  4. Sputter shadowing improved by using a tungsten target.

    PubMed

    Colquhoun, W R; Cassimeris, L U

    1985-05-01

    This work builds upon a previous paper (W. Colquhoun, 1984, J. Ultrastruct. Res. 87, 97) in which a sputter shadowing device was briefly described. The device allowed TEM specimens to be shadowed in a conventional sputter coater. Images obtained by sputter shadowing with a standard Au/Pd target were of good quality but were slightly inferior to the best that could be obtained by e--beam evaporation of tungsten. Here we show that construction and use of a tungsten target greatly improves the quality of the sputter shadowed deposit. Images of DNA and ribosomal subunits contrasted by sputter shadowing with tungsten are shown. The DNA images indicate that sputter shadowing with tungsten is a gentle contrasting technique. The sputter shadowed images of the 30 S ribosomal subunits show the major features of the particle revealed by evaporation shadowing using the most sophisticated of methods in that technology. Advantages of sputter shadowing are discussed and a rationale for the improved grain obtained by sputtering tungsten is suggested. PMID:2935642

  5. Simultaneous ion sputter polishing and deposition

    NASA Technical Reports Server (NTRS)

    Rutledge, S.; Banks, B.; Brdar, M.

    1981-01-01

    Results of experiments to study ion beam sputter polishing in conjunction with simultaneous deposition as a mean of polishing copper surfaces are presented. Two types of simultaneous ion sputter polishing and deposition were used in these experiments. The first type utilized sputter polishing simultaneous with vapor deposition, and the second type utilized sputter polishing simultaneous with sputter deposition. The etch and deposition rates of both techniques were studied, as well as the surface morphology and surface roughness.

  6. Apparatus and method for laser beam diagnosis

    DOEpatents

    Salmon, J.T. Jr.

    1991-08-27

    An apparatus and method are disclosed for accurate, real time monitoring of the wavefront curvature of a coherent laser beam. Knowing the curvature, it can be quickly determined whether the laser beam is collimated, or focusing (converging), or de-focusing (diverging). The apparatus includes a lateral interferometer for forming an interference pattern of the laser beam to be diagnosed. The interference pattern is imaged to a spatial light modulator (SLM), whose output is a coherent laser beam having an image of the interference pattern impressed on it. The SLM output is focused to obtain the far-field diffraction pattern. A video camera, such as CCD, monitors the far-field diffraction pattern, and provides an electrical output indicative of the shape of the far-field pattern. Specifically, the far-field pattern comprises a central lobe and side lobes, whose relative positions are indicative of the radius of curvature of the beam. The video camera's electrical output may be provided to a computer which analyzes the data to determine the wavefront curvature of the laser beam. 11 figures.

  7. Apparatus and method for laser beam diagnosis

    DOEpatents

    Salmon, Jr., Joseph T.

    1991-01-01

    An apparatus and method is disclosed for accurate, real time monitoring of the wavefront curvature of a coherent laser beam. Knowing the curvature, it can be quickly determined whether the laser beam is collimated, or focusing (converging), or de-focusing (diverging). The apparatus includes a lateral interferometer for forming an interference pattern of the laser beam to be diagnosed. The interference pattern is imaged to a spatial light modulator (SLM), whose output is a coherent laser beam having an image of the interference pattern impressed on it. The SLM output is focused to obtain the far-field diffraction pattern. A video camera, such as CCD, monitors the far-field diffraction pattern, and provides an electrical output indicative of the shape of the far-field pattern. Specifically, the far-field pattern comprises a central lobe and side lobes, whose relative positions are indicative of the radius of curvature of the beam. The video camera's electrical output may be provided to a computer which analyzes the data to determine the wavefront curvature of the laser beam.

  8. Fabrication of LiCoO{sub 2} thin film cathodes by DC magnetron sputtering method

    SciTech Connect

    Noh, Jung-pil; Cho, Gyu-bong; Jung, Ki-taek; Kang, Won-gyeong; Ha, Chung-wan; Ahn, Hyo-jun; Ahn, Jou-Hyeon; Nam, Tae-hyun; Kim, Ki-won

    2012-10-15

    LiCoO{sub 2} thin films were fabricated on Al substrate by direct current magnetron sputtering method. The effects of Ar/O{sub 2} gas rates and annealing temperatures were investigated. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction, Raman scattering spectroscopy and field emission scanning electron microscopy. The as-deposited LiCoO{sub 2} thin films exhibited amorphous structure. The crystallization starts at the annealing temperature over 400 °C. However, the annealed films have the partially disordered structure without completely ordered crystalline structure even at 600 °C annealing. The electrochemical properties of the LiCoO{sub 2} films were investigated by the charge–discharge and cycle measurements. The 500 °C annealing film has the highest capacity retention rate of 78.2% at 100th cycles.

  9. Synthesis of silicon oxynitride by ion beam sputtering and the effects of nitrogen ion-assisted bombardment

    NASA Astrophysics Data System (ADS)

    Lambrinos, M. F.; Valizadeh, R.; Colligon, J. S.

    1997-05-01

    Thin silicon oxynitride (SiO xN y) films were synthesised without substrate heating by means of N 2+ ion-beam sputtering of a silicon nitride target at an energy of 1000 eV in a N 2 and O 2 ambient with and without 200 eV N 2+ ion assistance. Unassisted films were deposited in a controlled O 2 partial pressure ranging from ambient to 5.0 × 10 -3 Pa whereas assisted films were deposited at a fixed O 2 partial pressure of 1.0 × 10 -3 Pa. The O/(O+N) atomic fraction and the SiO xN y asymmetric stretch mode IR absorption peak wavenumber of unassisted films increased almost linearly with increasing O 2 partial pressure, from 0.2 to 1.0 and 860 cm -1 to 1050 cm -1, respectively, while their refractive indices decreased from 1.92 to 1.46. The behaviour of the SiO xN y film refractive index with the SiO 2 fraction has been compared to that predicted by Drude, Lorentz-Lorenz and Bruggeman models under the assumption that the film is a mixture of SiO 2 and Si 3N 4 phases. For a fixed O 2 partial pressure, the O content of the N 2+ ion-assisted films increased with an increase in the N + ion to Si atom arrival ratio from 0 to 3. This increase in O content correlate with changes in the film refractive index and SiO xN y asymmetric stretch mode absorption peak position, from 1.56 to 1.43 and 1014 cm -1 to 1054 cm -1, respectively, indicating that the O/N atomic ratio increases with increasing N + ion to Si atom ratio until film properties consistent with stoichiometric SiO 2 are obtained.

  10. Plasmonic properties of Ag nanoparticles embedded in GeO2-SiO2 matrix by atom beam sputtering.

    PubMed

    Mohapatra, Satyabrata

    2016-02-01

    Nanocomposite thin films containing Ag nanoparticles embedded in the GeO2-SiO2 matrix were synthesized by the atom beam co-sputtering technique. The structural, optical and plasmonic properties and the chemical composition of the nanocomposite thin films were studied by transmission electron microscopy (TEM) with energy dispersive X-ray spectroscopy (EDX), UV-visible absorption spectroscopy and X-ray photoelectron spectroscopy (XPS). UV-visible absorption studies on Ag-SiO2 nanocomposites revealed the presence of a strong localized surface plasmon resonance (LSPR) peak characteristic of Ag nanoparticles at 413 nm, which showed a blue shift of 26 nm (413 to 387 nm) along with a significant broadening and drastic decrease in intensity with the incorporation of 16 at% of Ge into the SiO2 matrix. TEM studies on Ag-GeO2-SiO2 nanocomposite thin films confirmed the presence of Ag nanoparticles with an average size of 3.8 nm in addition to their aggregates with an average size of 16.2 nm. Thermal annealing in air resulted in strong enhancement in the intensity of the LSPR peak, which showed a regular red shift of 51 nm (from 387 to 438 nm) with the increase in annealing temperature up to 500 °C. XPS studies showed that annealing in air resulted in oxidation of excess Ge atoms in the nanocomposite into GeO2. Our work demonstrates the possibility of controllably tuning the LSPR of Ag nanoparticles embedded in the GeO2-SiO2 matrix by single-step thermal annealing, which is interesting for optical applications. PMID:26766559

  11. Magnetron sputtering system for coatings deposition with activation of working gas mixture by low-energy high-current electron beam

    NASA Astrophysics Data System (ADS)

    Gavrilov, N. V.; Kamenetskikh, A. S.; Men'shakov, A. I.; Bureyev, O. A.

    2015-11-01

    For the purposes of efficient decomposition and ionization of the gaseous mixtures in a system for coatings deposition using reactive magnetron sputtering, a low-energy (100-200 eV) high-current electron beam is generated by a grid-stabilized plasma electron source. The electron source utilizes both continuous (up to 20 A) and pulse-periodic mode of discharge with a self-heated hollow cathode (10-100 A; 0.2 ms; 10-1000 Hz). The conditions for initiation and stable burning of the high-current pulse discharge are studied along with the stable generation of a low-energy electron beam within the gas pressure range of 0.01 - 1 Pa. It is shown that the use of the electron beam with controllable parameters results in reduction of the threshold values both for the pressure of gaseous mixture and for the fluxes of molecular gases. Using such a beam also provides a wide range (0.1-10) of the flux density ratios of ions and sputtered atoms over the coating surface, enables an increase in the maximum pulse density of ion current from plasma up to 0.1 A, ensures an excellent adhesion, optimizes the coating structure, and imparts improved properties to the superhard nanocomposite coatings of (Ti,Al)N/a-Si3N4 and TiC/-a-C:H. Mass-spectrometric measurements of the beam-generated plasma composition proved to demonstrate a twofold increase in the average concentration of N+ ions in the Ar-N2 plasma generated by the high-current (100 A) pulsed electron beam, as compared to the dc electron beam.

  12. Method for producing uranium atomic beam source

    DOEpatents

    Krikorian, Oscar H.

    1976-06-15

    A method for producing a beam of neutral uranium atoms is obtained by vaporizing uranium from a compound UM.sub.x heated to produce U vapor from an M boat or from some other suitable refractory container such as a tungsten boat, where M is a metal whose vapor pressure is negligible compared to that of uranium at the vaporization temperature. The compound, for example, may be the uranium-rhenium compound, URe.sub.2. An evaporation rate in excess of about 10 times that of conventional uranium beam sources is produced.

  13. An innovative experimental setup for the measurement of sputtering yield induced by keV energy ions

    NASA Astrophysics Data System (ADS)

    Salou, P.; Lebius, H.; Benyagoub, A.; Langlinay, T.; Lelièvre, D.; Ban-d'Etat, B.

    2013-09-01

    An innovative experimental equipment allowing to study the sputtering induced by ion beam irradiation is presented. The sputtered particles are collected on a catcher which is analyzed in situ by Auger electron spectroscopy without breaking the ultra high vacuum (less than 10-9 mbar), avoiding thus any problem linked to possible contamination. This method allows to measure the angular distribution of sputtering yield. It is now possible to study the sputtering of many elements such as carbon based materials. Preliminary results are presented in the case of highly oriented pyrolytic graphite and tungsten irradiated by an Ar+ beam at 2.8 keV and 7 keV, respectively.

  14. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-09-01

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were

  15. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    NASA Astrophysics Data System (ADS)

    Twardowska, Agnieszka; Rajchel, Boguslaw; Jaworska, Lucyna

    2010-11-01

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti3SiC2 target. In those methods the TiXSiCY coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti3SiC2 compound sample. As sputtering beam the beam of Ar+ ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar+ ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1μm), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti5Si3 and other phases from Ti-Si-C system (TiSi, TiSi2,Ti3SiC2). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 4000C. In the HR mode the spectral resolution was close to 2 cm-1. In Raman spectra peaks at: 152cm-1, 216cm-1, 278cm-1, 311 cm-1, 608cm-1, 691cm-1 were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness HIT and reduced elastic modulus EIT were calculated using Olivier& Pharr method. HIT for coated substrates was in the range 2.7 to 5.3 GPa, EIT was 160 GPa.

  16. The influence of Atomic Oxygen on the Figure of Merit of Indium Tin Oxide thin Films grown by reactive Dual Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Geerts, Wilhelmus; Simpson, Nelson; Woodall, Allen; Compton, Maclyn

    2014-03-01

    Indium Tin Oxide (ITO) is a transparent conducting oxide that is used in flat panel displays and optoelectronics. Highly conductive and transparent ITO films are normally produced by heating the substrate to 300 Celsius during deposition excluding plastics to be used as a substrate material. We investigated whether high quality ITO films can be sputtered at room temperature using atomic instead of molecular oxygen. The films were deposited by dual ion beam sputtering (DIBS). During deposition the substrate was exposed to a molecular or an atomic oxygen flux. Microscope glass slides and silicon wafers were used as substrates. A 29 nm thick SIO2 buffer layer was used. Optical properties were measured with a M2000 Woollam variable angle spectroscopic ellipsometer. Electrical properties were measured by linear four point probe using a Jandel 4pp setup employing silicon carbide electrodes, high input resistance, and Keithley low bias current buffer amplifiers. The figure of merit (FOM), i.e. the ratio of the conductivity and the average optical absorption coefficient (400-800 nm), was calculated from the optical and electric properties and appeared to be 1.2 to 5 times higher for the samples sputtered with atomic oxygen. The largest value obtained for the FOM was 0.08 reciprocal Ohms. The authors would like to thank the Research Corporation for Financial Support.

  17. Effective beam method for element concentrations.

    PubMed

    Tolhurst, Thomas; Barbi, Mauricio; Tokaryk, Tim

    2015-03-01

    There is a great diversity of research being conducted at synchrotron facilities around the world and a diverse set of beamlines to accommodate this research. Time is a precious commodity at synchrotron facilities; therefore, methods that can maximize the time spent collecting data are of value. At the same time the incident radiation spectrum, necessary for some research, may not be known on a given beamline. A preliminary presentation of a method applicable to X-ray fluorescence spectrocopic analyses that overcomes the lack of information about the incident beam spectrum that addresses both of these concerns is given here. The method is equally applicable for other X-ray sources so long as local conditions are considered. It relies on replacing the polychromatic spectrum in a standard fundamental parameters analysis with a set of effective monochromatic photon beams. A beam is associated with each element and can be described by an analytical function allowing extension to elements not included in the necessary calibration measurement(s). PMID:25723941

  18. Effective beam method for element concentrations

    PubMed Central

    Tolhurst, Thomas; Barbi, Mauricio; Tokaryk, Tim

    2015-01-01

    There is a great diversity of research being conducted at synchrotron facilities around the world and a diverse set of beamlines to accommodate this research. Time is a precious commodity at synchrotron facilities; therefore, methods that can maximize the time spent collecting data are of value. At the same time the incident radiation spectrum, necessary for some research, may not be known on a given beamline. A preliminary presentation of a method applicable to X-ray fluorescence spectrocopic analyses that overcomes the lack of information about the incident beam spectrum that addresses both of these concerns is given here. The method is equally applicable for other X-ray sources so long as local conditions are considered. It relies on replacing the polychromatic spectrum in a standard fundamental parameters analysis with a set of effective monochromatic photon beams. A beam is associated with each element and can be described by an analytical function allowing extension to elements not included in the necessary calibration measurement(s). PMID:25723941

  19. The electromagnetic shielding of Ni films deposited on cenosphere particles by magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Yu, Xiaozheng; Shen, Zhigang

    2009-09-01

    Ni-coated cenosphere particles were successfully fabricated by an ultrasonic-assisted magnetron sputtering equipment. Their surface morphology and microstructure were analyzed using field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). FE-SEM results indicate that the Ni films coated by magnetron sputtering are uniform and compact. Ni film uniformity was related with the sputtering power and a large uniform film could be achieved at lower sputtering power. XRD results imply that the Ni film coated on cenospheres was a face-centered cubic (fcc) structure and the crystallization of film sample increases with increasing the sputtering power. The electromagnetic interference (EMI) shielding effectiveness (SE) of Ni-coated cenosphere particles were measured to be 4-27 dB over a frequency range 80-100 GHz, higher than those of uncoated cenosphere particles. The higher sputtering power and Ni film thickness are the higher EMI SE of the specimens. Ni-coated cenosphere particles are most promising alternative candidates for millimeter wave EMI shielding due to their lightweight, low cost, ease of processing, high floating time, good dispersion and tunable conductivities as compared with typical electromagnetic wave countermeasure materials.

  20. Analysis of (TiO II) X(Ta IIO 5) 1-X composite films prepared by radio frequency ion beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Tang, Chien-Jen; Wu, Yung-Chi; Lee, Cheng-Chung

    2006-08-01

    Using two or more materials to deposit a composite film has an advantage to get a film with desired refractive index. Besides, its optical property and mechanical property are better than a film deposited by a single material. In this study, (TiO II) X(Ta IIO 5) 1-X composite films have been prepared by a radio frequency ion beam sputtering deposition (RF-IBSD) where x was determined by the area ratio of titanium to tantalum targets. The optical constants of (TiO II) X(Ta IIO 5) 1-X composite films were calculated from their spectra by using envelope method. The refractive indices ranged from 2.481 to 2.165 at 550nm, and the extinction coefficients were lower than 1x10 -3 for wavelength in the ranges of 400nm to 600nm and lower than 1x10 -4 for wavelength longer than 600nm. The surface roughness of all composite films was about 0.1nm. The stress decreased from -520MPa for pure TiO II film to less than -280MPa for the composite films as measured by a phase-shift Twyman-Green interferometer. When the content of TiO II was less than 79.5%, the composite films were amorphous even post-baked to 400°C as measured by x-ray diffraction. The composite films mixed with TiO II and Ta IIO 5 can improve thermal stability and reduce extinction coefficient and stress. Composite films can replace the conventional high refractive index layer prepared by a single material to fabricate multilayer filters, and it is also suitable for high temperature applications, such as high reflection coating of projector lamps.

  1. Method for producing an atomic oxygen beam

    NASA Technical Reports Server (NTRS)

    Outlaw, Ronald A. (Inventor)

    1989-01-01

    A method for producing an atomic oxygen beam is provided by the present invention. First, a material 10' is provided which dissociates molecular oxygen and dissolves atomic oxygen into its bulk. Next, molecular oxygen is exposed to entrance surface 11' of material 10'. Next, material 10' is heated by heater 17' to facilitate the permeation of atomic oxygen through material 10' to the UHV side 12'. UHV side 12' is interfaced with an ultra-high vacuum (UHV) environment provided by UHV pump 15'. The atomic oxygen on the UHV side 12' is excited to a non-binding state by exciter 14' thus producing the release of atomic oxygen to form an atomic oxygen beam 35'.

  2. Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation.

    PubMed

    Ristau, Detlev; Günster, Stefan; Bosch, Salvador; Duparré, Angela; Masetti, Enrico; Ferré-Borrull, Josep; Kiriakidis, George; Peiró, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

    2002-06-01

    Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approximately 1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nm(rms)) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings. PMID:12064402

  3. Ion-beam sputtering deposition and magnetoelectric properties of layered heterostructures (FM/PZT/FM)n, where FM - Co or Ni78Fe22

    NASA Astrophysics Data System (ADS)

    Stognij, Alexander; Novitskii, Nikolai; Sazanovich, Andrei; Poddubnaya, Nadezhda; Sharko, Sergei; Mikhailov, Vladimir; Nizhankovski, Viktor; Dyakonov, Vladimir; Szymczak, Henryk

    2013-08-01

    Magnetoelectric properties of layered heterostructures (FM/PZT/FM)n (n≤ 3) obtained by ion-beam sputtering deposition of ferromagnetic metal (FM), where FM is the cobalt (Co) or permalloy Ni78Fe22, onto ferroelectric ceramic based on lead zirconate titanate (PZT) have been studied. The polished ferroelectric plates in thickness from 400 to 20 μm were subjected to finished treatment by ion-beam sputtering. After plasma activation they were covered by the ferromagnetic films from 1 to 6 μm in thickness. Enhanced characteristics of these structures were reached by means of both the thickness optimization of ferroelectric and ferromagnetic layers and obtaining of ferromagnetic/ferroelectric interfaces being free from defects and foreign impurities. Assuming on the basis of analysis of elastic stresses in the ferromagnetic film that the magnetoelectric effect forms within ferromagnetic/ferroelectric interface, the structures with 2-3 ferromagnetic layers were obtained. In layered heterostructure (Py/PZT/Py)3, the optimal thickness of ferromagnetic film was 2 μm, and outer and inner ferroelectric layers had 20 μm and 80 μm in thickness, respectively. For such structure the maximal magnetoelectric voltage coefficient of 250 mV/(cm Oe) was reached at a frequency 100 Hz in magnetic field of 0.25 T at room temperature. The structures studied can serve as energy-independent elements detecting the change of magnetic or electric fields in electronic devices based on magnetoelectric effect.

  4. Mass spectrometer and methods of increasing dispersion between ion beams

    DOEpatents

    Appelhans, Anthony D.; Olson, John E.; Delmore, James E.

    2006-01-10

    A mass spectrometer includes a magnetic sector configured to separate a plurality of ion beams, and an electrostatic sector configured to receive the plurality of ion beams from the magnetic sector and increase separation between the ion beams, the electrostatic sector being used as a dispersive element following magnetic separation of the plurality of ion beams. Other apparatus and methods are provided.

  5. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  6. Characterizing a proton beam with two different methods in beam halo experiments

    NASA Astrophysics Data System (ADS)

    Jiang, Hong-Ping; Fu, Shi-Nian; Peng, Jun; Cheng, Peng; Huang, Tao; Li, Peng; Li, Fang; Li, Jian; Liu, Hua-Chang; Liu, Mei-Fei; Meng, Ming; Meng, Cai; Mu, Zhen-Cheng; Rong, Lin-Yan; Ouyang, Hua-Fu; Sun, Biao; Wang, Bo; Tian, Jian-Min; Wang, Biao; Wang, Sheng-Chang; Yao, Yuan; Xu, Tao-Guang; Xu, Xin-An; Xin, Wen-Qu; Zhao, Fu-Xiang; Zeng, Lei; Zhou, Wen-Zhong

    2014-08-01

    In beam halo experiments, it is very important to correctly characterize the RFQ output proton beam. In order to simulate the beam dynamics properly, we must first know the correct initial beam parameters. We have used two different methods, quadrupole scans and multi-wire scanners to determine the transverse phase-space properties of the proton beam. The experimental data were analyzed by fitting to the 3-D nonlinear simulation code IMPACT. For the quadrupole scan method, we found that the RMS beam radius and the measured beam-core profiles agreed very well with the simulations. For the multi-wire scanner method, we choose the case of a matched beam. By fitting the IMPACT simulation results to the measured data, we obtained the Courant-Snyder parameters and the emittance of the beam. The difference between the two methods is about eight percent, which is acceptable in our experiments.

  7. A novel approach for the characterization of a bilayer of phenyl-c71-butyric-acid-methyl ester and pentacene using ultraviolet photoemission spectroscopy and argon gas cluster ion beam sputtering process

    SciTech Connect

    Yun, Dong-Jin; Chung, JaeGwan; Jung, Changhoon; Chung, Yeonji; Kim, SeongHeon; Lee, Seunghyup; Kim, Ki-Hong; Han, Hyouksoo; Park, Gyeong-Su; Park, SungHoon

    2013-09-07

    The material arrangement and energy level alignment of an organic bilayer comprising of phenyl-c71-butyric-acid-methyl ester (PCBM-71) and pentacene were studied using ultraviolet photoelectron spectroscopy (UPS) and the argon gas cluster ion beam (GCIB) sputtering process. Although there is a small difference in the full width at half maximum of the carbon C 1s core level peaks and differences in the oxygen O 1s core levels of an X-ray photoemission spectroscopy spectra, these differences are insufficient to clearly distinguish between PCBM-71 and pentacene layers and to classify the interface and bulk regions. On the other hand, the valence band structures in the UPS spectra contain completely distinct configurations for the PCBM-71 and pentacene layers, even when they have similar atomic compositions. According to the valence band structures of the PCBM-71/pentacene/electrodes, the highest unoccupied molecular orbital (HOMO) region of pentacene is at least 0.8 eV closer to the Fermi level than that of PCBM-71 and it does not overlap with any of the chemical states in the valence band structure of PCBM-71. Therefore, by just following the variations in the area of the HOMO region of pentacene, the interface/bulk regions of the PCBM/pentacene layers were distinctly categorized. Besides, the variation of valence band structures as a function of the Ar GCIB sputtering time fully corroborated with the surface morphologies observed in the atomic force microscope images. In summary, we believe that the novel approach, which involves UPS analysis in conjunction with Ar GCIB sputtering, can be one of the best methods to characterize the material distribution and energy level alignments of stacks of organic layers.

  8. Stress induced growth of Sn nanowires in a single step by sputtering method

    NASA Astrophysics Data System (ADS)

    Yadav, A.; Patel, N.; Miotello, A.; Kothari, D. C.

    2015-06-01

    Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.

  9. Stress induced growth of Sn nanowires in a single step by sputtering method

    SciTech Connect

    Yadav, A. Kothari, D. C.; Patel, N.; Miotello, A.

    2015-06-24

    Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.

  10. Migration by the Kirchhoff, slant stack, and Gaussian beam methods

    SciTech Connect

    Hale, D.

    1992-08-01

    Gaussian beam migration offers features that are unmatched by any other single depth migration method. Unfortunately, computer algorithms for Gaussian beam migration are more complicated and difficult to understand that those for most other methods. One way to simplify Gaussian beam migration is to understand how it is related to other methods that may be more familiar. In particular, Gaussian beam migration is similar to Kirchhoff integral migration. It is also similar to the phase-shift (or slant stack) migration method. In a sense, the Gaussian beam approach to depth migration is to combine the best of these more familiar methods to obtain an efficient, robust, and flexible method for seismic imaging.

  11. Migration by the Kirchhoff, slant stack, and Gaussian beam methods

    SciTech Connect

    Hale, D.

    1992-01-01

    Gaussian beam migration offers features that are unmatched by any other single depth migration method. Unfortunately, computer algorithms for Gaussian beam migration are more complicated and difficult to understand that those for most other methods. One way to simplify Gaussian beam migration is to understand how it is related to other methods that may be more familiar. In particular, Gaussian beam migration is similar to Kirchhoff integral migration. It is also similar to the phase-shift (or slant stack) migration method. In a sense, the Gaussian beam approach to depth migration is to combine the best of these more familiar methods to obtain an efficient, robust, and flexible method for seismic imaging.

  12. Fabrication of sharp tungsten-coated tip for atomic force microscopy by ion-beam sputter deposition

    SciTech Connect

    Kinoshita, Yukinori; Naitoh, Yoshitaka; Li, Yan Jun; Sugawara, Yasuhiro

    2011-11-15

    Tungsten (W) is significantly suitable as a tip material for atomic force microscopy (AFM) because its high mechanical stiffness enables the stable detection of tip-sample interaction forces. We have developed W sputter-coating equipment to compensate the drawbacks of conventional Si cantilever tips used in AFM measurements. By employing an ion gun commonly used for sputter cleaning of a cantilever tip, the equipment is capable of depositing conductive W films in the preparation chamber of a general ultrahigh vacuum (UHV)-AFM system without the need for an additional chamber or transfer system. This enables W coating of a cantilever tip immediately after sputter cleaning of the tip apex and just before the use in AFM observations. The W film consists of grain structures, which prevent tip dulling and provide sharpness (<3 nm in radius of curvature at the apex) comparable to that of the original Si tip apex. We demonstrate that in non-contact (NC)-AFM measurement, a W-coated Si tip can clearly resolve the atomic structures of a Ge(001) surface without any artifacts, indicating that, as a force sensor, the fabricated W-coated Si tip is superior to a bare Si tip.

  13. Validating mass spectrometry measurements of nuclear materials via a non-contact volume analysis method of ion sputter craters

    SciTech Connect

    Willingham, David G.; Naes, Benjamin E.; Fahey, Albert J.

    2015-01-01

    A combination of secondary ion mass spectrometry, optical profilometry and a statistically-driven algorithm was used to develop a non-contact volume analysis method to validate the useful yields of nuclear materials. The volume analysis methodology was applied to ion sputter craters created in silicon and uranium substrates sputtered by 18.5 keV O- and 6.0 keV Ar+ ions. Sputter yield measurements were determined from the volume calculations and were shown to be comparable to Monte Carlo calculations and previously reported experimental observations. Additionally, the volume calculations were used to determine the useful yields of Si+, SiO+ and SiO2+ ions from the silicon substrate and U+, UO+ and UO2+ ions from the uranium substrate under 18.5 keV O- and 6.0 keV Ar+ ion bombardment. This work represents the first steps toward validating the interlaboratory and cross-platform performance of mass spectrometry for the analysis of nuclear materials.

  14. Multi-jump magnetic switching in ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20} thin films

    SciTech Connect

    Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

    2013-08-07

    Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20}(5–75 nm) thin films grown on Si/amorphous SiO{sub 2} are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices.

  15. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.

    1994-02-15

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material is described. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly. 11 figures.

  16. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.

    1994-01-01

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly.

  17. Initial alignment method for free space optics laser beam

    NASA Astrophysics Data System (ADS)

    Shimada, Yuta; Tashiro, Yuki; Izumi, Kiyotaka; Yoshida, Koichi; Tsujimura, Takeshi

    2016-08-01

    The authors have newly proposed and constructed an active free space optics transmission system. It is equipped with a motor driven laser emitting mechanism and positioning photodiodes, and it transmits a collimated thin laser beam and accurately steers the laser beam direction. It is necessary to introduce the laser beam within sensible range of the receiver in advance of laser beam tracking control. This paper studies an estimation method of laser reaching point for initial laser beam alignment. Distributed photodiodes detect laser luminescence at respective position, and the optical axis of laser beam is analytically presumed based on the Gaussian beam optics. Computer simulation evaluates the accuracy of the proposed estimation methods, and results disclose that the methods help us to guide the laser beam to a distant receiver.

  18. Development of W/C soft x-ray multilayer mirror by ion beam sputtering (IBS) system for below 50A wavelength

    SciTech Connect

    Biswas, A.; Bhattacharyya, D.

    2012-06-25

    A home-made Ion Beam Sputtering (IBS) system has been developed in our laboratory. Using the IBS system single layer W and single layer C film has been deposited at 1000eV Ar ion energy and 10mA ion current. The W-film has been characterized by grazing Incidence X-ray reflectrometry (GIXR) technique and Atomic Force Microscope technique. The single layer C-film has been characterized by Spectroscopic Ellipsometric technique. At the same deposition condition 25-layer W/C multilayer film has been deposited which has been designed for using as mirror at 30 Degree-Sign grazing incidence angle around 50A wavelength. The multilayer sample has been characterized by measuring reflectivity of CuK{alpha} radiation and soft x-ray radiation around 50A wavelength.

  19. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    SciTech Connect

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal; Gupta, M.; Deshpande, U. P.

    2013-08-12

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

  20. Characterization of ion beam sputtered deposited W/Si multilayers by grazing incidence x-ray diffraction and x-ray reflectivity technique

    NASA Astrophysics Data System (ADS)

    Dhawan, Rajnish; Rai, Sanjay

    2016-05-01

    W/Si multilayers four samples have been deposited on silicon substrate using ion beam sputtering system. Thickness of tungsten (W) varies from around 10 Å to 40 Å while the silicon (Si) thickness remains constant at around 30 Å in multilayers [W-Si]x4. The samples have been characterized by grazing incidence X-ray diffraction (GIXRD) and X-ray reflectivity technique (XRR). GIXRD study shows the crystalline behaviour of W/Si multilayer by varying W thickness and it is found that above 20 Å the W film transform from amorphous to crystalline phase and X-ray reflectivity data shows that the roughnesses of W increases on increasing the W thicknesses in W/Si multilayers.

  1. Blue electroluminescence from Sb-ZnO/Cd-ZnO/Ga-ZnO heterojunction diode fabricated by dual ion beam sputtering.

    PubMed

    Pandey, Sushil Kumar; Awasthi, Vishnu; Verma, Shruti; Mukherjee, Shaibal

    2014-12-15

    p-type Sb-doped ZnO/i-CdZnO/n-type Ga-doped ZnO was grown by dual ion beam sputtering deposition system. Current-voltage characteristics of the heterojunction showed a diode-like rectifying behavior with a turn-on voltage of ~5 V. The diode yielded blue electroluminescence emissions at around 446 nm in forward biased condition at room temperature. The emission intensity increased with the increase of the injection current. A red shifting of the emission peak position was observed with the increment of ambient temperature, indicating a change of band gap of the CdZnO active layer with temperature in low-temperature measurement. PMID:25607047

  2. Large Area Microcorrals and Cavity Formation on Cantilevers using a Focused Ion Beam

    SciTech Connect

    Saraf, Laxmikant V.; Britt, David W.

    2011-09-14

    We utilize focused ion beam (FIB) to explore various sputtering parameters to form large area microcorrals and cavities on cantilevers. Microcorrals were rapidly created by modifying ion beam blur and overlaps. Modification in FIB sputtering parameters affects the periodicity and shape of corral microstructure. Cantilever deflections show ion beam amorphization effects as a function of sputtered area and cantilever base cavities with or without side walls. The FIB sputtering parameters address a method for rapid creation of a cantilever tensiometer with integrated fluid storage and delivery.

  3. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

    PubMed Central

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-01-01

    The influence of growth temperature Ts (300–773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K. PMID:27357004

  4. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-06-01

    The influence of growth temperature Ts (300–773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

  5. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

    PubMed

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-01-01

    The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K. PMID:27357004

  6. Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Kal, S.; Kasko, I.; Ryssel, H.

    1995-10-01

    The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

  7. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  8. Electron beam directed energy device and methods of using same

    DOEpatents

    Retsky, Michael W.

    2007-10-16

    A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat or preferably shaped to direct each electron beam to exit the electron gun at a predetermined orientation. In one preferred application, the device is located in outer space with individual beams that are directed to focus at a distant target to be used to impact and destroy missiles. The aimings of the separate beams are designed to overcome Coulomb repulsion. A method is also presented for directing the beams to a target considering the variable terrestrial magnetic field. In another preferred application, the electron beam is directed into the ground to produce a subsurface x-ray source to locate and/or destroy buried or otherwise hidden objects including explosive devices.

  9. One method to uniformize LD Gaussian beam

    NASA Astrophysics Data System (ADS)

    Liu, Xu

    2001-10-01

    The uniformization of Gaussian beam intensity is necessary in many applications. In active night-vision, monitoring targets especially requires this. IR semiconductor laser is widely used in the area because of its low power-consumption and small size. But the effects of the product are restrained due to system output Gaussian beam of ununiform intensity. The essay discusses a former system design and then gives an improved experimental scheme with some exciting results. The previous structure was as follows. High power SQW-LD beam was coupled to a plastic optical fiber (POF) directly, and then output through a lens. With its angle varied, targets ranged from 60 to 100 meters can be monitored. But unfortunately there were interference speckles folded on the target. An experimental system based on the thoughts of fiber transmission and complex filter was designed to improve the distribution of Gaussian beam intensity, with the result that the relatively well-distributed beam was got. Laser wavefront propagated through a very small pinhole whose diameter was 20 micrometers or so. The pinhole acted as an amplitude filter. Then the beam was coupled directly into a multi-mode quartz fiber whose core/cladding layer diameter parameter was 50/125micrometers . It conveyed laser beam about 200 mm. At the end of the fiber, several phase plates stood. Laser beam transmitted through the fiber was then phase-filtered and at last beam-expanded by a lens to illuminate the target. The more plates you used, the more uniform the illuminated picture was on condition the beam intensity was so strong that the CCD device could respond to.

  10. Beam conditioning for FELs: Consequences and methods

    SciTech Connect

    Wolski, A.; Penn, G.; Sessler, A.; Wurtele, J.

    2004-06-29

    The consequences of beam conditioning in four example cases (VISA, a Soft X-Ray FEL, LCLS and a ''Greenfield'' FEL) are examined. It is shown that in emittance limited cases, proper conditioning reduces sensitivity to the transverse emittance and, furthermore, allows for stronger focusing in the undulator. Simulations show higher saturation power, with gain lengths reduced by a factor of two or more. The beam dynamics in a general conditioning system are studied, with ''matching conditions'' derived for achieving conditioning without growth in the effective emittance. Various conditioning lattices are considered, and expressions derived for the amount of conditioning provided in each case when the matching conditions are satisfied. These results show that there is no fundamental obstacle to producing beam conditioning, and that the problem can be reduced to one of proper lattice design. Nevertheless, beam conditioning will not be easy to implement in practice.

  11. Shielded beam delivery apparatus and method

    DOEpatents

    Hershcovitch, Ady; Montano, Rory Dominick

    2006-07-11

    An apparatus includes a plasma generator aligned with a beam generator for producing a plasma to shield an energized beam. An electrode is coaxially aligned with the plasma generator and followed in turn by a vortex generator coaxially aligned with the electrode. A target is spaced from the vortex generator inside a fluid environment. The electrode is electrically biased relative to the electrically grounded target for driving the plasma toward the target inside a vortex shield.

  12. Properties of nano structured Ag-TiO2 composite coating on stainless steel using RF sputtering method

    NASA Astrophysics Data System (ADS)

    Bakar, S. Abu; Jamuna-Thevi, K.; Abu, N.; Mohd Toff, M. R.

    2012-07-01

    RF Sputtering system is one of the Physical Vapour Deposition (PVD) methods that have been widely used to produce hard coating. This technique is used to deposit thin layers of metallic substrates such as stainless steel (SS). From this process, a good adhesiveness and wear resistance coating can be produced for biomedical applications. In this study, RF sputtering method was used to deposit TiO2-Ag composite coatings via various deposition parameters. The parameters are RF power of 350W, gas composition (Ar: O2) 50:5 and deposition time at 1, 2, 4 and 6 hours. Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Raman spectroscopy were used to characterize surface area of coated samples. The formation of nanocrystalline thin film and the surface morphology were examined using SEM. The crystallite size of TiO2-Ag composite coatings were estimated between 20-60 nm based on XRD analysis using Scherer equation and SEM evaluation. The Raman and XRD results suggested that the structure of the TiO2-Ag consist of anatase and rutile phases. It also showed that the intensity of anatase peaks increased after samples undergone annealing process at 500 °C.

  13. Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

    NASA Astrophysics Data System (ADS)

    Tsukamoto, Takahiro; Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki; Suda, Yoshiyuki

    2013-10-01

    The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 Ω cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

  14. Properties of nano structured Ag-TiO{sub 2} composite coating on stainless steel using RF sputtering method

    SciTech Connect

    Bakar, S. Abu; Jamuna-Thevi, K.; Abu, N.; Mohd Toff, M. R.

    2012-07-02

    RF Sputtering system is one of the Physical Vapour Deposition (PVD) methods that have been widely used to produce hard coating. This technique is used to deposit thin layers of metallic substrates such as stainless steel (SS). From this process, a good adhesiveness and wear resistance coating can be produced for biomedical applications. In this study, RF sputtering method was used to deposit TiO{sub 2}-Ag composite coatings via various deposition parameters. The parameters are RF power of 350W, gas composition (Ar: O{sub 2}) 50:5 and deposition time at 1, 2, 4 and 6 hours. Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Raman spectroscopy were used to characterize surface area of coated samples. The formation of nanocrystalline thin film and the surface morphology were examined using SEM. The crystallite size of TiO{sub 2}-Ag composite coatings were estimated between 20-60 nm based on XRD analysis using Scherer equation and SEM evaluation. The Raman and XRD results suggested that the structure of the TiO{sub 2}-Ag consist of anatase and rutile phases. It also showed that the intensity of anatase peaks increased after samples undergone annealing process at 500 Degree-Sign C.

  15. Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

    SciTech Connect

    Tsukamoto, Takahiro; Suda, Yoshiyuki; Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki

    2013-10-21

    The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 Ω cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

  16. Sputter target

    DOEpatents

    Gates, Willard G.; Hale, Gerald J.

    1980-01-01

    The disclosure relates to an improved sputter target for use in the deposition of hard coatings. An exemplary target is given wherein titanium diboride is brazed to a tantalum backing plate using a gold-palladium-nickel braze alloy.

  17. Work Function Modification of Tungsten-Doped Indium Oxides Deposited by the Co-Sputtering Method.

    PubMed

    Oh, Gyujin; Jeon, Jia; Lee, Kyoung Su; Kim, Eun Kyu

    2016-05-01

    We have studied the work function modification of tungsten-doped indium oxides (IWOs) through the co-sputtering of indium oxide (In2O3) and indium tungsten oxide (In2O3 80 wt% + WO3 20 wt%) via a radio frequency (RF) magnetron sputtering system. By controlling the elemental deposition of IWOs, the resultant work functions varied from 4.37 eV to 4.1 eV. The IWO thin films showed excellent properties for application as transparent conducting oxide materials in the region of 0 to 2.43 at.% of tungsten versus the total metal content. The carrier concentration of n-type IWO thin films varied from 8.39 x 10(19) cm(-3) to 8.58 x 10(21) cm(-3), while the resistivity varied from 3.15 x 10(-4) Ωcm to 2.26 x 10(-3) Ωcm. The largest measured optical band gap was 3.82 eV determined at 2.43 at.% of tungsten atoms relative to the total amount of metal atoms, while the smallest optical band gap was 3.6 eV at 4.78 at.% of tungsten. IWO films containing more than 2.43 at.% of tungsten atoms relative to the total number of metal atoms revealed an average transmittance of over 80% within the visible light region. PMID:27483882

  18. Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ellmer, K.; Mientus, R.; Weiß, V.; Rossner, H.

    2001-07-01

    A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3° and 10°, is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

  19. Systems and methods of varying charged particle beam spot size

    SciTech Connect

    Chen, Yu-Jiuan

    2014-09-02

    Methods and devices enable shaping of a charged particle beam. A modified dielectric wall accelerator includes a high gradient lens section and a main section. The high gradient lens section can be dynamically adjusted to establish the desired electric fields to minimize undesirable transverse defocusing fields at the entrance to the dielectric wall accelerator. Once a baseline setting with desirable output beam characteristic is established, the output beam can be dynamically modified to vary the output beam characteristics. The output beam can be modified by slightly adjusting the electric fields established across different sections of the modified dielectric wall accelerator. Additional control over the shape of the output beam can be excreted by introducing intentional timing de-synchronization offsets and producing an injected beam that is not fully matched to the entrance of the modified dielectric accelerator.

  20. High power pulsed magnetron sputtering: A method to increase deposition rate

    SciTech Connect

    Raman, Priya McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-05-15

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed.

  1. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  2. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  3. Beam Conditioning for FELs: Consequences and Methods

    SciTech Connect

    Wolski, Andrzej; Penn, Gregory; Sessler, Andrew; Wurtele, Jonathan

    2003-10-09

    The consequences of beam conditioning in four example cases (VISA, a Soft X-Ray FEL, LCLS and a ''Greenfield'' FEL) are examined. It is shown that in emittance limited cases, proper conditioning reduces sensitivity to the transverse emittance, and allows stronger focusing in the undulator. Simulations show higher saturation power, with gain lengths reduced up to a factor of two. The beam dynamics in a general conditioning system are studied, with ''matching conditions'' derived for achieving conditioning without growth in effective emittance. Various conditioners are considered, and expressions derived for the amount of conditioning provided in each case when the matching conditions are satisfied. We discuss the prospects for conditioners based on laser and plasma systems.

  4. Stress relaxation in dual ion beam sputtered Nb2O5 and SiO2 thin films: application in a Fabry-Pérot filter array with 3D nanoimprinted cavities

    NASA Astrophysics Data System (ADS)

    Ullah, Anayat; Wilke, Hans; Memon, Imran; Shen, Yannan; Nguyen, Duc Toan; Woidt, Carsten; Hillmer, Hartmut

    2015-05-01

    Miniaturized spectrometers can be implemented using Fabry-Pérot (FP) filter arrays. Such filters are defined by two parallel mirrors with a resonance cavity in between. For high optical quality, ion beam sputtered distributed Bragg reflectors (DBRs), with alternating high and low refractive index material pairs, can be used as the FP mirrors; while 3D nanoimprint technology provides an efficient way of implementing multiple organic FP cavities of different heights in a single step. However, the high residual stress in ion beam sputtered films results in poor adhesion between the DBR films and the organic polymer cavities, causing debonding of the DBR. Therefore, the residual stress of the ion beam sputtered films forming the DBRs must be reduced. Niobium pentoxide (Nb2O5) and silicon dioxide (SiO2) are used as the DBR materials in this work due to their high index contrast, resulting in high reflectivity for only a few alternating pairs. Stress relaxation in ion beam sputtered Nb2O5 and SiO2 films is achieved in this work by deposition under simultaneous high energy ion bombardment (oxygen and argon gas mixture) from a second ion source. Using this technique, the film density and hence compressive film stress for both Nb2O5 and SiO2 films is reduced without introducing any additional optical absorption in the films. FP filter arrays fabricated with stress reduced Nb2O5 and SiO2 as DBR films exhibit high optical and mechanical performance, with good adhesion between the films and the polymer cavity.

  5. Ion Beam Analysis, structure and corrosion studies of nc-TiN/a-Si3N4 nanocomposite coatings deposited by sputtering on AISI 316L

    NASA Astrophysics Data System (ADS)

    García, J.; Canto, C. E.; Flores, M.; Andrade, E.; Rodríguez, E.; Jiménez, O.; Solis, C.; de Lucio, O. G.; Rocha, M. F.

    2014-07-01

    In this work, nanocomposite coatings of nc-TiN/a-Si3N4, were deposited on AISI 316L stainless steel substrate by a DC and RF reactive magnetron co-sputtering technique using an A-N2 plasma. The structure of the coatings was characterized by means of XRD (X-ray Diffraction). The substrate and coating corrosion resistance were evaluated by potentiodynamic polarization using a Ringer solution as electrolyte. Corrosion tests were conducted with the purpose to evaluate the potential of this coating to be used on biomedical alloys. IBA (Ion Beam Analysis) techniques were applied to measure the elemental composition profiles of the films and, XPS (X-ray Photoelectron Spectroscopy) were used as a complementary technique to obtain information about the compounds present in the films. The nanocomposite coatings of nc-TiN/a-Si3N4 show crystalline (TiN) and amorphous (Si3N4) phases which confer a better protection against the corrosion effects compared with that of the AISI 316L.

  6. Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal-semiconductor-metal Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Hong, Min-Jyun; Lin, Yong-Chen; Chao, Liang-Chiun; Lin, Pao-Hung; Huang, Bohr-Ran

    2015-08-01

    Cupric (CuO) and cuprous (Cu2O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O2 ratio from 2:1 to 12:1. With an Ar:O2 ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu2O and Cu2O + Cu mixed thin films. As Ar:O2 ratio reaches 12:1, Cu2O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal-semiconductor-metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs.

  7. The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

    2009-01-01

    CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

  8. Atom penetration from a thin film into the substrate during sputtering by polyenergetic Ar{sup +} ion beam with mean energy of 9.4 keV

    SciTech Connect

    Kalin, B.A.; Gladkov, V.P.; Volkov, N.V.; Sabo, S.E.

    1995-12-31

    Penetration of alien atoms (Be, Ni) into Be, Al, Zr, Si and diamond was investigated under Ar{sup +} ion bombardment of samples having thermally evaporated films of 30--50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar{sup +} ions of 9.4 keV to dose D = 1 {times} 10{sup 16}--10{sup 19} ion/cm{sup 2}. Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of H{sup +} and He{sup +} ions with energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS). During the bombardment, the penetration depth of Ar atoms increases with dose linearly. This depth is more than 3--20 times deeper than the projected range of bombarding ions and recoil atoms. This is a deep action effect. The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r{sub i}/r{sub m} (r{sub i} -- radius of dopant, r{sub m} -- radius target of substrate) can play a principal determining role.

  9. Effect of discharge current and deposition temperature on roughness and density of NbC films fabricated by ion beam sputtering technique

    SciTech Connect

    Dhawan, Rajnish Rai, Sanjay Lodha, G. S.

    2014-04-24

    NbC films were prepared using Ion beam sputtering system at various discharges current from 0.4 amps to 1.2 amps at room temperature. Effect of temperature on NbC films were also studied by depositing NbC films at various temperatures from room temperature to 200,300,400 and 600°C. X-ray reflectivity (XRR) study shows that surface roughness of the film decreases with decrease in discharge current. The optimum lowest roughness 3.2Å having density 92% of bulk was achieved at discharge current 0.6 amps at 3.0 cm{sup 3}/min Ar gas flow. X-ray study also shows that film roughness decreases with increase in temperature of the film and after a certain temperature it increases with increase in temperature. The lowest surface roughness 2.1Å was achieved at 300°C with density 83% of bulk NbC at constant discharge current 0.6 amps.

  10. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

    SciTech Connect

    Nishiwaki, M.; Ueda, K. Asano, H.

    2015-05-07

    High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.