Doping-induced spin-orbit splitting in Bi-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Aras, Mehmet; Güler-Kılıç, Sümeyra; Kılıç, ćetin

2017-04-01

Our predictions, based on density-functional calculations, reveal that surface doping of ZnO nanowires with Bi leads to a linear-in-k splitting of the conduction-band states, through spin-orbit interaction, due to the lowering of the symmetry in the presence of the dopant. This finding implies that spin polarization of the conduction electrons in Bi-doped ZnO nanowires could be controlled with applied electric (as opposed to magnetic) fields, making them candidate materials for spin-orbitronic applications. Our findings also show that the degree of spin splitting could be tuned by adjusting the dopant concentration. Defect calculations and ab initio molecular dynamics simulations indicate that stable doping configurations exhibiting the foregoing linear-in-k splitting could be realized under reasonable thermodynamic conditions.

Thermoelectric properties of Sn doped BiCuSeO

NASA Astrophysics Data System (ADS)

Das, Sayan; Chetty, Raju; Wojciechowski, Krzysztof; Suwas, Satyam; Mallik, Ramesh Chandra

2017-10-01

BiCuSeO and Bi1-xSnxCuSeO (x = 0.02, 0.04, 0.06, 0.08) were prepared by a two-step solid state synthesis. The phase purity and the crystal structure were investigated by the X-Ray Diffraction (XRD) and confirmed by Energy Dispersive Spectroscopy (EDS). The volatilization of Bi and Bi2O3 lead to off-stoichiometry of the main phase and the formation of CuSe2 secondary phase in the undoped sample. SnO2 secondary phases were found in the doped samples. Both the Seebeck coefficient and the electrical resistivity, measured from the room temperature to 773 K linearly increases with the temperature, which indicates that the sample have metallic like behavior. The origin of such a behavior is due to high hole concentration originating from the Bi and the O vacancies. The Sn +4 valence state was confirmed from the X-Ray Photoelectron Spectroscopy (XPS) and from the reduction of lattice parameter 'a' with doping. The substitution of Sn+4 in the place of Bi+3 leads to the higher Seebeck coefficient and electrical resistivity in the doped samples. Highest power-factor (∼1 mW/m-K2 at 773 K), was obtained for the undoped sample and the 4% Sn doped sample (Bi0.96Sn0.04CuSeO). The lowest thermal conductivity was obtained for the undoped sample, from the room temperature to 773 K. The presence of thermally-conducting SnO2 secondary phases in the doped samples increases the thermal conductivity in comparison with the undoped sample. The zTs of the doped samples were lower compared to the undoped sample, owing to their higher thermal conductivity. The oxygen vacancies as well as the all-length scale phonon scattering, lowers the thermal conductivity of the undoped sample and, as a result, a maximum zT of 1.09 was achieved at 773 K.

Investigation of energy transfer mechanisms between Bi(2+) and Tm(3+) by time-resolved spectrum.

PubMed

Li, Yang; Sharafudeen, Kaniyarakkal; Dong, Guoping; Ma, Zhijun; Qiu, Jianrong

2013-11-01

Here, we report for the first time the optical properties of Bi(2+) and Tm(3+) co-doped germanate glasses and elucidate the potential of this material as substrates to improve the performance of CdTe solar cell. A strong emission peak at 800nm is observed under the excitation of 450-700nm in this material. The energy transfer processes from the transitions of Bi(2+) [(2)P3/2(1)→(2)P1/2]: Tm(3+) [(3)H6→(3)H4] are investigated by time-resolved luminescence spectroscopy. A cover glass exhibiting an ultra-broadband response spectrum covering the entire solar visible wavelength region is suggested to enhance the conversion efficiency of CdTe solar cells significantly. Copyright © 2013 Elsevier B.V. All rights reserved.

CdTe Nanocrystal Hetero-Junction Solar Cells with High Open Circuit Voltage Based on Sb-doped TiO₂ Electron Acceptor Materials.

PubMed

Li, Miaozi; Liu, Xinyan; Wen, Shiya; Liu, Songwei; Heng, Jingxuan; Qin, Donghuan; Hou, Lintao; Wu, Hongbin; Xu, Wei; Huang, Wenbo

2017-05-03

We propose Sb-doped TiO₂ as electron acceptor material for depleted CdTe nanocrystal (NC) hetero-junction solar cells. Novel devices with the architecture of FTO/ZnO/Sb:TiO₂/CdTe/Au based on CdTe NC and TiO₂ precursor are fabricated by rational ambient solution process. By introducing TiO₂ with dopant concentration, we are able to tailor the optoelectronic properties of NC solar cells. Our novel devices demonstrate a very high open circuit voltage of 0.74 V, which is the highest V oc reported for any CdTe NC based solar cells. The power conversion efficiency (PCE) of solar cells increases with the increase of Sb-doped content from 1% to 3%, then decreases almost linearly with further increase of Sb content due to the recombination effect. The champion device shows J sc , V oc , FF, and PCE of 14.65 mA/cm², 0.70 V, 34.44, and 3.53% respectively, which is prospective for solution processed NC solar cells with high V oc .

Enhanced electrochemiluminescence quenching of CdS:Mn nanocrystals by CdTe QDs-doped silica nanoparticles for ultrasensitive detection of thrombin.

PubMed

Shan, Yun; Xu, Jing-Juan; Chen, Hong-Yuan

2011-07-01

This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO(2) NPs). CdTe/SiO(2) NPs were synthesized via the Stöber method and showed black bodies' strong absorption in a wide spectral range without excitonic emission, which made them excellent ECL quenchers. Within the effective distance of energy scavenging, the ECL quenching efficiency was dependent on the number of CdTe QDs doped into the silica NPs. Using ca. 200 CdTe QDs doped silica NPs on average of 40 nm in diameter as ECL quenching labels, attomolar detection of thrombin was successfully realized. The protein detection involves a competition binding event, based on thrombin replacing CdTe/SiO(2) NPs labeled probing DNA which is hybridized with capturing aptamer immobilized on a CdS:Mn NCs film modified glassy carbon electrode surface by specific aptamer-protein affinity interactions. It results in the displacement of ECL quenching labels from CdS:Mn NCs film and concomitant ECL signal recovery. Owing to the high-content CdTe QDs in silica NP, the increment of ECL intensity (ΔI(ECL)) and the concentration of thrombin showed a double logarithmic linear correlation in the range of 5.0 aM∼5.0 fM with a detection limit of 1aM. And, the aptasensor hardly responded to antibody, bovine serum albumin (BSA), haemoglobin (Hb) and lysozyme, showing good detection selectivity for thrombin. This long-distance energy scavenging could have a promising application perspective in the detection of biological recognition events on a molecular level.

First-principles study of roles of Cu and Cl in polycrystalline CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang

2016-01-25

In this study, Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance ptype doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu willmore » prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.« less

First-principles study of roles of Cu and Cl in polycrystalline CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ji-Hui; Park, Ji-Sang; Metzger, Wyatt

2016-01-28

Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance p-type doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to staymore » at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.« less

Electrical tuning of spin splitting in Bi-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Aras, Mehmet; Kılıç, ćetin

2018-01-01

The effect of applying an external electric field on doping-induced spin-orbit splitting of the lowest conduction-band states in a bismuth-doped zinc oxide nanowire is studied by performing electronic structure calculations within the framework of density functional theory. It is demonstrated that spin splitting in Bi-doped ZnO nanowires could be tuned and enhanced electrically via control of the strength and direction of the applied electric field, thanks to the nonuniform and anisotropic response of the ZnO:Bi nanowire to external electric fields. The results reported here indicate that a single ZnO nanowire doped with a low concentration of Bi could function as a spintronic device, the operation of which is controlled by applied lateral electric fields.

CdTe Nanocrystal Hetero-Junction Solar Cells with High Open Circuit Voltage Based on Sb-doped TiO2 Electron Acceptor Materials

PubMed Central

Li, Miaozi; Liu, Xinyan; Wen, Shiya; Liu, Songwei; Heng, Jingxuan; Qin, Donghuan; Hou, Lintao; Wu, Hongbin; Xu, Wei; Huang, Wenbo

2017-01-01

We propose Sb-doped TiO2 as electron acceptor material for depleted CdTe nanocrystal (NC) hetero-junction solar cells. Novel devices with the architecture of FTO/ZnO/Sb:TiO2/CdTe/Au based on CdTe NC and TiO2 precursor are fabricated by rational ambient solution process. By introducing TiO2 with dopant concentration, we are able to tailor the optoelectronic properties of NC solar cells. Our novel devices demonstrate a very high open circuit voltage of 0.74 V, which is the highest Voc reported for any CdTe NC based solar cells. The power conversion efficiency (PCE) of solar cells increases with the increase of Sb-doped content from 1% to 3%, then decreases almost linearly with further increase of Sb content due to the recombination effect. The champion device shows Jsc, Voc, FF, and PCE of 14.65 mA/cm2, 0.70 V, 34.44, and 3.53% respectively, which is prospective for solution processed NC solar cells with high Voc. PMID:28467347

Magnetic properties of vanadium doped CdTe: Ab initio calculations

NASA Astrophysics Data System (ADS)

Goumrhar, F.; Bahmad, L.; Mounkachi, O.; Benyoussef, A.

2017-04-01

In this paper, we are applying the ab initio calculations to study the magnetic properties of vanadium doped CdTe. This study is based on the Korringa-Kohn-Rostoker method (KKR) combined with the coherent potential approximation (CPA), within the local density approximation (LDA). This method is called KKR-CPA-LDA. We have calculated and plotted the density of states (DOS) in the energy diagram for different concentrations of dopants. We have also investigated the magnetic and half-metallic properties of this compound and shown the mechanism of exchange interaction. Moreover, we have estimated the Curie temperature Tc for different concentrations. Finally, we have shown how the crystal field and the exchange splittings vary as a function of the concentrations.

Ferromagnetic and photocatalytic behaviors observed in Ca-doped BiFeO3 nanofibres

NASA Astrophysics Data System (ADS)

Feng, Yan-Nan; Wang, Huan-Chun; Luo, Yi-Dong; Shen, Yang; Lin, Yuan-Hua

2013-04-01

Ca-doped BiFeO3 nanofibres have been fabricated by electrospinning method. Our results indicate that phase transition from space group R3c to C222 can be observed by the Ca doping. These BiFeO3 nanofibres show obvious room temperature ferromagnetic behaviors, and saturation magnetization can be enhanced with the Ca-doping concentration increasing, which could be correlated with the variation of the ratio of Fe2+/Fe3+ valence state. The BiFeO3 nanofibres show obvious photocatalytic performance and can be improved by the Ca-doping.

Thermodynamic and nonstoichiometric behavior of the lead-doped Bi-2223 system

NASA Astrophysics Data System (ADS)

Tetenbaum, M.; Hash, M.; Tani, B. S.; Luo, J. S.; Maroni, V. A.

1994-12-01

Electromotive force (EMF) measurements of oxygen fugacities as a function of stoichiometry have been made in the lead-doped Bi-2223 superconducting system in the temperature range 700-815°C by means of an oxygen titration technique. The results of our studies indicate that processing or annealing lead-doped Bi-2223 at temperatures ranging from 700 to 815°C and at oxygen partial pressures ranging from ∼0.02 to 0.2 atm should tend to preserve Bi-2223 as essentially single-phase material. Thermodynamic assessments of partial molar quantities indicate that the plateau regions can be represented by the diphasic CuOCu 2O system. In accord with the EMF measurements, it was found that lead-doped Bi-2223 in a silver sheath is stable at 815°C for oxygen partial pressures between 0.02 and 0.13 atm. Long-duration post anneals of silver-clad Bi-2223 filaments at 825°C and an oxygen partial pressure of 0.075 atm eliminated Bi-2212 intergrowths with a concomitant increase in the superconducting transition sharpness.

Photoelectrochemical Properties and Photostabilities of High Surface Area CuBi 2O 4 and Ag-Doped CuBi 2O 4 Photocathodes

DOE PAGES

Kang, Donghyeon; Hill, James C.; Park, Yiseul; ...

2016-06-09

Here, electrochemical synthesis methods were developed to produce CuBi 2O 4, a promising p-type oxide for use in solar water splitting, as high surface area electrodes with uniform coverage. These methods involved electrodepositing nanoporous Cu/Bi films with a Cu:Bi ratio of 1:2 from dimethyl sulfoxide or ethylene glycol solutions, and thermally oxidizing them to CuBi 2O 4 at 450°C in air. Ag-doped CuBi 2O 4 electrodes were also prepared by adding a trace amount of Ag+ in the plating medium and codepositing Ag with the Cu/Bi films. In the Ag-doped CuBi 2O 4, Ag+ ions substitutionally replaced Bi3+ ions andmore » increased the hole concentration in CuBi 2O 4. As a result, photocurrent enhancements for both O 2 reduction and water reduction were achieved. Furthermore, while undoped CuBi 2O 4 electrodes suffered from anodic photocorrosion during O 2 reduction due to poor hole transport, Ag-doped CuBiO 4 effectively suppressed anodic photocorrosion. The flat-band potentials of CuBi 2O 4 and Ag-doped CuBi 2O 4 electrodes prepared in this study were found to be more positive than 1.3 V vs RHE in a 0.1 M NaOH solution (pH 12.8), which make these photocathodes highly attractive for use in solar hydrogen production. The optimized CuBi 2O 4/Ag-doped CuBi 2O 4 photocathode showed a photocurrent onset for water reduction at 1.1 V vs RHE, achieving a photovoltage higher than 1 V for water reduction. The thermodynamic feasibility of photoexcited electrons in the conduction band of CuBi 2O 4 to reduce water was also confirmed by detection of H 2 during photocurrent generation. This study provides new understanding for constructing improved CuBi 2O 4 photocathodes by systematically investigating photocorrosion as well as photoelectrochemical properties of high-quality CuBi 2O 4 and Ag-doped CuBi 2O 4 photoelectrodes for photoreduction of both O 2 and water.« less

Photoelectrochemical Properties and Photostabilities of High Surface Area CuBi 2O 4 and Ag-Doped CuBi 2O 4 Photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Donghyeon; Hill, James C.; Park, Yiseul

Here, electrochemical synthesis methods were developed to produce CuBi 2O 4, a promising p-type oxide for use in solar water splitting, as high surface area electrodes with uniform coverage. These methods involved electrodepositing nanoporous Cu/Bi films with a Cu:Bi ratio of 1:2 from dimethyl sulfoxide or ethylene glycol solutions, and thermally oxidizing them to CuBi 2O 4 at 450°C in air. Ag-doped CuBi 2O 4 electrodes were also prepared by adding a trace amount of Ag+ in the plating medium and codepositing Ag with the Cu/Bi films. In the Ag-doped CuBi 2O 4, Ag+ ions substitutionally replaced Bi3+ ions andmore » increased the hole concentration in CuBi 2O 4. As a result, photocurrent enhancements for both O 2 reduction and water reduction were achieved. Furthermore, while undoped CuBi 2O 4 electrodes suffered from anodic photocorrosion during O 2 reduction due to poor hole transport, Ag-doped CuBiO 4 effectively suppressed anodic photocorrosion. The flat-band potentials of CuBi 2O 4 and Ag-doped CuBi 2O 4 electrodes prepared in this study were found to be more positive than 1.3 V vs RHE in a 0.1 M NaOH solution (pH 12.8), which make these photocathodes highly attractive for use in solar hydrogen production. The optimized CuBi 2O 4/Ag-doped CuBi 2O 4 photocathode showed a photocurrent onset for water reduction at 1.1 V vs RHE, achieving a photovoltage higher than 1 V for water reduction. The thermodynamic feasibility of photoexcited electrons in the conduction band of CuBi 2O 4 to reduce water was also confirmed by detection of H 2 during photocurrent generation. This study provides new understanding for constructing improved CuBi 2O 4 photocathodes by systematically investigating photocorrosion as well as photoelectrochemical properties of high-quality CuBi 2O 4 and Ag-doped CuBi 2O 4 photoelectrodes for photoreduction of both O 2 and water.« less

Synthesis and thermoelectric property of Ca and In-doped n-type Bi85Sb15 alloy

NASA Astrophysics Data System (ADS)

Kadel, Kamal; Li, Wenzhi; Joshi, Giri; Ren, Zhifeng

2014-03-01

In the present work we investigated the thermo-electric properties of undoped Bi85Sb15 and different Ca-doped Bi85Sb15Cax (x =0.5, 2, and 5) and In-doped Bi85Sb15Inx(x =0.5, 2) alloys synthesized via arc-melting first and followed by ball milling and hot pressing. Effect of different Ca and In doping levels on transport properties of Bi85Sb15 alloys has been investigated. It is found that thermal conductivity decreases with increasing Ca and decreasing In. Electrical transport measurements show that power factor increases with doping level of Ca up to Bi85Sb15Ca2 and then decreases yielding the maximum power factor of 3.8 × 10-3 Wm-1K-2 and zT of 0.39 at room temperature for Bi85Sb15Ca2. For indium doping, power factor decreases with doping level from 0.5 to 2, yielding the maximum zT value of 0.37 at room temperature for Bi85Sb15In0.5. In this work, calcium doping in Bi85Sb15 alloy is found to yield better thermoelectric property than indium doping.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi.

PubMed

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-03-23

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge 20 Te 77 Se₃ glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge 20 Te 77 Se₃) 100- x M x (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge 20 Te 77 Se₃) 100- x Bi x ( x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm -1 K -1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses.

Ferromagnetism of vanadium doped Bi2Se3 thin films

NASA Astrophysics Data System (ADS)

Zhang, Liguo; Zhao, Dapeng; Zang, Yunyi; Yuan, Yonghao; Jiang, Gaoyuan; He, Ke; Ma, Xucun; Xue, Qikun

Bi2Se3 is a representative three-dimensional topological insulator with a bulk band gap of about 300 meV. The quantum anomalous Hall effect (QAHE) has never been realized in Bi2Se3-based magnetic topological insulators due to the difficulties in introducing ferromagnetism in them. With molecular beam epitaxy (MBE), we have grown vanadium-doped Bi2Se3 films with decent crystalline quality and homogeneous distribution of V impurities. The films are all electron-doped and show square-shaped hysteresis loops of Hall resistance with coercivity up to 0.2T at 2K, indicating ferromagnetism with perpendicular magnetic anisotropy in them. Both the ferromagnetism and anomalous Hall resistance are enhanced by decreasing electron density. We have systematically studied the magneto-transport properties of the films with varying V concentration, film thickness, and carrier density and discussed the mechanism of ferromagnetic coupling. The study demonstrates that V-doped Bi2Se3 films are candidate QAHE materials if their electron density can be further reduced. This work was supported by National Natural Science Foundation of China.

Thermoelectric properties of Tl and I dual-doped Bi2Te3-based alloys

NASA Astrophysics Data System (ADS)

Wu, Fang; He, Qinglin; Tang, Mingsheng; Song, Hongzhang

2018-04-01

TlxBi2‑xTe3‑xIx (x = 0, 0.05, 0.1 and 0.2) flower-like nanopowders were prepared successfully by the hydrothermal method. Then, the synthesized nanoparticles were pressed into bulks by hot-pressing. The thermoelectric (TE) properties of the TlxBi2‑xTe3‑xIx bulk samples were investigated and discussed. The results showed that the influences of Tl doping on the electrical resistivity and Seebeck coefficients of the Bi2Te3 is over that of I doping. Thus, the power factors of the dual-doped bulks are all less than that of the Bi2Te3 bulk. The thermal conductivities of the TlxBi2‑xTe3‑xIx bulk samples also remain at lower values. As a result, the ZT value of the optimized doped bulk Tl0.1Bi1.9Te2.9I0.1 attains a value of 1.1 at 398 K.

Effect of Silver Doping on Transport Properties of Bi2Se3: AgxBi2Se3 and Bi2-xAgxSe3

NASA Astrophysics Data System (ADS)

Zhang, Min; Wei, Zhan-Tao

2018-05-01

Ag-doped Bi2Se3 with the formula AgxBi2Se3 and Bi2-xAgxSe3 were prepared and their electrical and magnetic transport properties have been investigated to study the influence of silver doping on transport properties of Bi2Se3 with different Ag-doped method. All samples exhibited metallic resistivity and the resistivity increased with increasing Ag concentration. The lattice parameter c of Ag-substituted and Ag-intercalated samples displays a contrary change as the Ag concentration increased. For the Ag-intercalated samples, both the resistance upturn were observed in the curves of temperature dependent of resistivity and temperature dependent of magnetoresistance, respectively, indicating that the enhanced surface effect was obtained in those samples. Monotonously, field-induced MR peaks around 200 K were also observed in those samples. Similar behaviors were not observed in the Ag-substituted samples.

Engineering Topological Surface State of Cr-doped Bi2Se3 under external electric field

NASA Astrophysics Data System (ADS)

Zhang, Jian-Min; Lian, Ruqian; Yang, Yanmin; Xu, Guigui; Zhong, Kehua; Huang, Zhigao

2017-03-01

External electric field control of topological surface states (SSs) is significant for the next generation of condensed matter research and topological quantum devices. Here, we present a first-principles study of the SSs in the magnetic topological insulator (MTI) Cr-doped Bi2Se3 under external electric field. The charge transfer, electric potential, band structure and magnetism of the pure and Cr doped Bi2Se3 film have been investigated. It is found that the competition between charge transfer and spin-orbit coupling (SOC) will lead to an electrically tunable band gap in Bi2Se3 film under external electric field. As Cr atom doped, the charge transfer of Bi2Se3 film under external electric field obviously decreases. Remarkably, the band gap of Cr doped Bi2Se3 film can be greatly engineered by the external electric field due to its special band structure. Furthermore, magnetic coupling of Cr-doped Bi2Se3 could be even mediated via the control of electric field. It is demonstrated that external electric field plays an important role on the electronic and magnetic properties of Cr-doped Bi2Se3 film. Our results may promote the development of electronic and spintronic applications of magnetic topological insulator.

p-type doping efficiency in CdTe: Influence of second phase formation

NASA Astrophysics Data System (ADS)

McCoy, Jedidiah J.; Swain, Santosh K.; Sieber, John R.; Diercks, David R.; Gorman, Brian P.; Lynn, Kelvin G.

2018-04-01

Cadmium telluride (CdTe) high purity, bulk, crystal ingots doped with phosphorus were grown by the vertical Bridgman melt growth technique to understand and improve dopant solubility and activation. Large net carrier densities have been reproducibly obtained from as-grown ingots, indicating successful incorporation of dopants into the lattice. However, net carrier density values are orders of magnitude lower than the solubility of P in CdTe as reported in literature, 1018/cm3 to 1019/cm3 [J. H. Greenberg, J. Cryst. Growth 161, 1-11 (1996) and R. B. Hall and H. H. Woodbury, J. Appl. Phys. 39(12), 5361-5365 (1968)], despite comparable starting charge dopant densities. Growth conditions, such as melt stoichiometry and post growth cooling, are shown to have significant impacts on dopant solubility. This study demonstrates that a significant portion of the dopant becomes incorporated into second phase defects as compounds of cadmium and phosphorous, such as cadmium phosphide, which inhibits dopant incorporation into the lattice and limits maximum attainable net carrier density in bulk crystals. Here, we present an extensive study on the characteristics of these second phase defects in relation to their composition and formation kinetics while providing a pathway to minimize their formation and enhance solubility.

Thermoelectric Properties of Bi Doped Tetrahedrite

NASA Astrophysics Data System (ADS)

Prem Kumar, D. S.; Chetty, R.; Femi, O. E.; Chattopadhyay, K.; Malar, P.; Mallik, R. C.

2017-05-01

Bi doped tetrahedrites with nominal compositions of Cu12Sb4- x Bi x S13 ( x = 0, 0.2, 0.4, 0.6, 0.8) were synthesized by the solid state reaction method. Powder x-ray diffraction patterns confirmed that Cu12Sb4S13 (tetrahedrite structure) was the main phase, along with Cu3SbS4 and Cu3SbS3 as the secondary phases. Electron probe microanalysis provided the elemental composition of all the samples. It was confirmed that the main phase is the tetrahedrite phase with slight deviations in the stoichiometry. All the transport properties were measured between 423 K and 673 K. The electrical resistivity increased with an increase in Bi content for all the samples, possibly induced by the variation in the carrier concentration, which may be due to the influence of impurity phases. The increase in electrical resistivity with an increase in temperature indicates the degenerate semiconducting nature of the samples. The absolute Seebeck coefficient is positive throughout the temperature range indicating the p-type nature of the samples. The Seebeck coefficient for all the samples increased with an increase in Bi content as electrical resistivity. The variation of electrical resistivity and the Seebeck coefficient with doping can be attributed to the changes in the carrier concentration of the samples. The total thermal conductivity increases with an increase in temperature and decreases with an increase in the Bi content that could be due to the reduction in carrier thermal conductivity. The highest thermoelectric figure of merit ( zT) 0.84 at 673 K was obtained for the sample with x = 0.2 due to lower thermal conductivity (1.17 W/m K).

Bismuth doping effect on crystal structure and photodegradation activity of Bi-TiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Wu, Ming-Chung; Chang, Yin-Hsuan; Lin, Ting-Han

2017-04-01

The bismuth precursor is adopted as dopant to synthesize bismuth doped titanium dioxide nanoparticles (Bi-TiO2 NPs) with sol-gel method following by the thermal annealing treatment. We systematically developed a series of Bi-TiO2 NPs at several calcination temperatures and discovered the corresponding crystal structure by varying the bismuth doping concentration. At a certain 650 °C calcination temperature, the crystal structure of bismuth titanate (Bi2Ti2O7) is formed when the bismuth doping concentration is as high as 10.0 mol %. The photocatalytic activity of Bi-TiO2 NPs is increased by varying the doping concentration at the particular calcination temperature. By the definition X-ray diffraction (XRD) structural identification, a phase diagram of Bi-TiO2 NPs in doping concentration versus calcination temperature is provided. It can be useful for further study in the crystal structure engineering and the development of photocatalyst.

Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O

NASA Astrophysics Data System (ADS)

Brandt, Iuri S.; Tumelero, Milton A.; Martins, Cesar A.; Plá Cid, Cristiani C.; Faccio, Ricardo; Pasa, André A.

2018-04-01

Doping leading to low electrical resistivity in electrodeposited thin films of Cu2O is a straightforward requirement for the construction of efficient electronic and energy devices. Here, Bi (7 at. %) doped Cu2O layers were deposited electrochemically onto Si(100) single-crystal substrates from aqueous solutions containing bismuth nitrate and cupric sulfate. X-ray photoelectron spectroscopy shows that Bi ions in a Cu2O lattice have an oxidation valence of 3+ and glancing angle X-ray diffraction measurements indicated no presence of secondary phases. The reduction in the electrical resistivity from undoped to Bi-doped Cu2O is of 4 and 2 orders of magnitude for electrical measurements at 230 and 300 K, respectively. From variations in the lattice parameter and the refractive index, the electrical resistivity decrease is addressed to an increase in the density of Cu vacancies. Density functional theory (DFT) calculations supported the experimental findings. The DFT results showed that in a 6% Bi doped Cu2O cell, the formation of Cu vacancies is more favorable than in an undoped Cu2O one. Moreover, from DFT data was observed that there is an increase (decrease) of the Cu2O band gap (activation energy) for 6% Bi doping, which is consistent with the experimental results.

How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klie, Robert

It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functionalmore » theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.« less

Bi-Se doped with Cu, p-type semiconductor

DOEpatents

Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

2013-08-20

A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

PubMed Central

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-01-01

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se3 glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se3)100−xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se3)100−xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm−1 K−1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses. PMID:28772687

Persistent spin helix manipulation by optical doping of a CdTe quantum well

NASA Astrophysics Data System (ADS)

Passmann, F.; Anghel, S.; Tischler, T.; Poshakinskiy, A. V.; Tarasenko, S. A.; Karczewski, G.; Wojtowicz, T.; Bristow, A. D.; Betz, M.

2018-05-01

Time-resolved Kerr-rotation microscopy explores the influence of optical doping on the persistent spin helix in a [001]-grown CdTe quantum well at cryogenic temperatures. Electron spin-diffusion dynamics reveal a momentum-dependent effective magnetic field providing SU(2) spin-rotation symmetry, consistent with kinetic theory. The Dresselhaus and Rashba spin-orbit coupling parameters are extracted independently from rotating the spin helix with external magnetic fields applied parallel and perpendicular to the effective magnetic field. Most importantly, a nonuniform spatiotemporal precession pattern is observed. The kinetic-theory framework of spin diffusion allows for modeling of this finding by incorporating the photocarrier density into the Rashba (α) and the Dresselhaus (β3) parameters. Corresponding calculations are further validated by an excitation-density-dependent measurement. This work shows universality of the persistent spin helix by its observation in a II-VI compound and the ability to fine-tune it by optical doping.

Oxygen stoichiometry, phase stability, and thermodynamic behavior of the lead-doped Bi-2223 and Ag/Bi-2223 systems

NASA Astrophysics Data System (ADS)

Tetenbaum, M.; Hash, M.; Tani, B. S.; Luo, J. S.; Maroni, V. A.

1995-02-01

Electromotive-force (EMF) measurements of oxygen fugacities as a function of stoichiometry have been made in the lead-doped Bi-2223 superconducting system in the temperature range 700-815°C by means of an oxygen titration technique that employs an yttria-stabilized zirconia electrolyte. The results of our studies indicate that processing or annealing lead-doped Bi-2223 at temperatures ranging from 750 to 815°C and at oxygen partial pressures ranging from ∼ 0.02 to 0.2 atm should preserve Bi-2223 as essentially single-phase material. Thermodynamic assessments of the partial molar quantities ΔS¯( O2) andΔH¯( O2) indicate that the plateau regions in the plot of oxygen partial pressure versus oxygen stoichiometry ( x) can be represented by the diphasic CuOCu 2O system. In accord with the EMF measurements, it was found that lead-doped Bi-2223 in a silver sheath is stable at 815°C for oxygen partial pressures between 0.02 and 0.13 atm.

Characterization of Bi and Fe co-doped PZT capacitors for FeRAM.

PubMed

Cross, Jeffrey S; Kim, Seung-Hyun; Wada, Satoshi; Chatterjee, Abhijit

2010-08-01

Ferroelectric random access memory (FeRAM) has been in mass production for over 15 years. Higher polarization ferroelectric materials are needed for future devices which can operate above about 100 °C. With this goal in mind, co-doping of thin Pb(Zr 40 ,Ti 60 )O 3 (PZT) films with 1 at.% Bi and 1 at.% Fe was examined in order to enhance the ferroelectric properties as well as characterize the doped material. The XRD patterns of PZT-5% BiFeO 3 (BF) and PZT 140-nm thick films showed (111) orientation on (111) platinized Si wafers and a 30 °C increase in the tetragonal to cubic phase transition temperature, often called the Curie temperature, from 350 to 380 °C with co-doping, indicating that Bi and Fe are substituting into the PZT lattice. Raman spectra revealed decreased band intensity with Bi and Fe co-doping of PZT compared to PZT. Polarization hysteresis loops show similar values of remanent polarization, but square-shaped voltage pulse-measured net polarization values of PZT-BF were higher and showed higher endurance to repeated cycling up to 10 10 cycles. It is proposed that Bi and Fe are both in the +3 oxidation state and substituting into the perovskite A and B sites, respectively. Substitution of Bi and Fe into the PZT lattice likely creates defect dipoles, which increase the net polarization when measured by the short voltage pulse positive-up-negative-down (PUND) method.

Characterization of Bi and Fe co-doped PZT capacitors for FeRAM

PubMed Central

Cross, Jeffrey S; Kim, Seung-Hyun; Wada, Satoshi; Chatterjee, Abhijit

2010-01-01

Ferroelectric random access memory (FeRAM) has been in mass production for over 15 years. Higher polarization ferroelectric materials are needed for future devices which can operate above about 100 °C. With this goal in mind, co-doping of thin Pb(Zr40,Ti60)O3 (PZT) films with 1 at.% Bi and 1 at.% Fe was examined in order to enhance the ferroelectric properties as well as characterize the doped material. The XRD patterns of PZT-5% BiFeO3 (BF) and PZT 140-nm thick films showed (111) orientation on (111) platinized Si wafers and a 30 °C increase in the tetragonal to cubic phase transition temperature, often called the Curie temperature, from 350 to 380 °C with co-doping, indicating that Bi and Fe are substituting into the PZT lattice. Raman spectra revealed decreased band intensity with Bi and Fe co-doping of PZT compared to PZT. Polarization hysteresis loops show similar values of remanent polarization, but square-shaped voltage pulse-measured net polarization values of PZT-BF were higher and showed higher endurance to repeated cycling up to 1010 cycles. It is proposed that Bi and Fe are both in the +3 oxidation state and substituting into the perovskite A and B sites, respectively. Substitution of Bi and Fe into the PZT lattice likely creates defect dipoles, which increase the net polarization when measured by the short voltage pulse positive-up-negative-down (PUND) method. PMID:27877349

Enhanced ferromagnetic properties in Nd and Gd co-doped BiFeO3 ceramics

NASA Astrophysics Data System (ADS)

Jena, A. K.; Chelvane, J. Arout; Mohanty, J.

2018-05-01

Structural, optical and magnetic properties of Nd3+ and Gd3+ doped BiFeO3 were studied. X-ray diffraction studies confirmed that all the co-doped Bi1-x-yNdxGdyFeO3 samples are polycrystalline in nature crystallizing in rhombohedral type structure (Space group: R3c). In addition to this presence of residual phases like Bi2Fe4O9, Bi25FeO40 were also observed. Raman spectra confirms the structural distortion in co-doped ceramics. Band gap of samples decrease from 2.08eV to 1.95eV with increase in Gd concentration. Room temperature magnetization measurement indicated enhancement of magnetic properties with increase in Gd concentration.

Autosurfactant of the second kind: Bi enables δ-doping of Bi in Si

NASA Astrophysics Data System (ADS)

Murata, Koichi; Miki, Kazushi; Fukatsu, Susumu

2017-10-01

Surfactants in heteroepitaxy are catalytic elements that float up to the surface during growth to control the energetics/kinetics of adatoms. "Autosurfactants" are exceptional in that the surfactant action is self-contained without foreign species. So far, autosurfactants as surface smootheners are known. Here, we demonstrate a different class of autosurfactants as surface-segregation quenchers: Bi, a dopant with a strong surface-segregation tendency in Si, is utilized to lock otherwise elusive Bi adatoms themselves to the Si lattice underneath during molecular beam epitaxy. Quasi-1D δ-doping of Bi in Si up to 4 × 1020 cm-3 in terms of volume concentration is achieved.

Spatial Distribution of Dopant Incorporation in CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guthrey, Harvey; Moseley, John; Colegrove, Eric

2016-11-21

In this work we use state-of-the-art cathodoluminescence (CL) spectrum imaging that provides spectrum-per-pixel mapping of the CL emission to examine how dopant elements are incorporated into CdTe. Emission spectra and intensity are used to monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on theoretical modeling. Our results show that grain boundaries play a role in the incorporation of dopants in CdTe, whether intrinsic or extrinsic. This type of analysis is crucial for providing feedback to design different processing schedules that optimize dopant incorporation in CdTe photovoltaic material, which has struggled to reachmore » high carrier concentration values. Here, we present results on CdTe films exposed to copper, phosphorus, and intrinsic doping treatments.« less

Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

PubMed Central

Han, Mi-Kyung; Lee, Da-Hee; Kim, Sung-Jin

2017-01-01

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi2Te3, n-type Bi2Te3 co-doped with x at % CuI and 1/2x at % Pb (x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi2Te3 were measured in the temperature range from 300 K to 523 K, and compared to corresponding x% of CuI-doped Bi2Te3 and undoped Bi2Te3. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient when compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi2Te3 rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κtot) of co-doped samples (κtot ~ 1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi2Te3 (κtot ~ 1.5 W/m∙K at 300 K) and undoped Bi2Te3 (κtot ~ 1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi2Te3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi2Te3 and its operating temperature can be controlled by co-doping. PMID:29072613

Flowerlike C-doped BiOCl nanostructures: Facile wet chemical fabrication and enhanced UV photocatalytic properties

NASA Astrophysics Data System (ADS)

Yu, Jiahui; Wei, Bo; Zhu, Lin; Gao, Hong; Sun, Wenjun; Xu, Lingling

2013-11-01

3D-flowerlike C-doped bismuth oxychloride (BiOCl) hierarchical structures have been synthesized through a facile, low temperature wet-chemical method using polyacrylamide (PAM) as both chelating and doping agents. The flowerlike products are composed of nanosheets, as verified by the scanning electron microscopy (SEM). The crystal structure and compositional characteristics were investigated by X-ray diffraction (XRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Photocatalytic activities of C-doped BiOCl samples with different amounts of PAM adding were investigated by the degradation of methyl orange (MO) dye and colorless phonel contaminant under ultra-violet light irradiation. The as-prepared C-doped BiOCl exhibited much higher photocatalytic activity than the pure one. Moreover, the best performance of the photo-degradation was observed on the sample synthesized by 0.4 g PAM adding. The results show that C-doped BiOCl can be used as a promising candidate for water-purification.

Visualization of hormone binding proteins in vivo based on Mn-doped CdTe QDs

NASA Astrophysics Data System (ADS)

Liu, Fang fei; Yu, Ying; Lin, Bi xia; Hu, Xiao gang; Cao, Yu juan; Wu, Jian zhong

2014-10-01

Daminozide (B9) is a growth inhibitor with important regulatory roles in plant growth and development. Locating and quantifying B9-binding proteins in plant tissues will assist in investigating the mechanism behind the signal transduction of B9. In this study, red fluorescent Mn-doped CdTe quantum dots (CdTeMn QDs) were synthesized by a high-temperature hydrothermal process. Since CdTeMn QDs possess a maximum fluorescence emission peak at 610 nm, their fluorescence properties are more stable than those of CdTe QDs. A B9-CdTeMn probe was synthesized by coupling B9 with CdTeMn QDs. The fluorescence intensity of the probe is double that of CdTeMn QDs; its fluorescence stability is also superior under different ambient conditions. The probe retains the biological activity of B9 and is unaffected by interference from the green fluorescent protein present in plants. Therefore, we used this probe to label B9-binding proteins selectively in root tissue sections of mung bean seedlings. These proteins were observed predominantly on the surfaces of the cell membranes of the cortex and epidermal parenchyma.

Structural and optical properties of cobalt doped multiferroics BiFeO3 nanostructure thin films

NASA Astrophysics Data System (ADS)

Prasannakumara, R.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and Cobalt doped BiFeO3 (BiFe1-XCoXO3) nanostructure thin films were deposited on glass substrates by the sol-gel spin coating method. The X-ray diffraction patterns (XRD) of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films showed distorted rhombohedral structure. The shifting of peaks to higher angles was observed in cobalt doped BiFeO3. The surface morphology of the BiFeO3 and BiFe1-XCoXO3 nanostructure thin films were studied using FESEM, an increase in grain size was observed as Co concentration increases. The thickness of the nanostructure thin films was examined using FESEM cross-section. The EDX studies confirmed the elemental composition of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films. The optical characterizations of the grown nanostructure thin films were carried out using FTIR, it confirms the existence of Fe-O and Bi-O bands and UV-Visible spectroscopy shows the increase in optical band gap of the BiFeO3 nanostructure thin films with Co doping by ploting Tauc plot.

Colloidal Synthesis of Te-Doped Bi Nanoparticles: Low-Temperature Charge Transport and Thermoelectric Properties.

PubMed

Gu, Da Hwi; Jo, Seungki; Jeong, Hyewon; Ban, Hyeong Woo; Park, Sung Hoon; Heo, Seung Hwae; Kim, Fredrick; Jang, Jeong In; Lee, Ji Eun; Son, Jae Sung

2017-06-07

Electronically doped nanoparticles formed by incorporation of impurities have been of great interest because of their controllable electrical properties. However, the development of a strategy for n-type or p-type doping on sub-10 nm-sized nanoparticles under the quantum confinement regime is very challenging using conventional processes, owing to the difficulty in synthesis. Herein, we report the colloidal chemical synthesis of sub-10 nm-sized tellurium (Te)-doped Bismuth (Bi) nanoparticles with precisely controlled Te content from 0 to 5% and systematically investigate their low-temperature charge transport and thermoelectric properties. Microstructural characterization of nanoparticles demonstrates that Te ions are successfully incorporated into Bi nanoparticles rather than remaining on the nanoparticle surfaces. Low-temperature Hall measurement results of the hot-pressed Te-doped Bi-nanostructured materials, with grain sizes ranging from 30 to 60 nm, show that the charge transport properties are governed by the doping content and the related impurity and nanoscale grain boundary scatterings. Furthermore, the low-temperature thermoelectric properties reveal that the electrical conductivity and Seebeck coefficient expectedly change with the Te content, whereas the thermal conductivity is significantly reduced by Te doping because of phonon scattering at the sites arising from impurities and nanoscale grain boundaries. Accordingly, the 1% Te-doped Bi sample exhibits a higher figure-of-merit ZT by ∼10% than that of the undoped sample. The synthetic strategy demonstrated in this study offers the possibility of electronic doping of various quantum-confined nanoparticles for diverse applications.

Fe-Doping Effect on Thermoelectric Properties of p-Type Bi0.48Sb1.52Te₃.

PubMed

Mun, Hyeona; Lee, Kyu Hyoung; Kim, Suk Jun; Kim, Jong-Young; Lee, Jeong Hoon; Lim, Jae-Hong; Park, Hee Jung; Roh, Jong Wook; Kim, Sung Wng

2015-03-05

The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi₂Te₃-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p -type Bi 0.48 Sb 1.52 Te₃. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb) and dopants (Fe). An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi 0.48 Sb 1.52 Te₃ by these synergetic effects.

Fe-Doping Effect on Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3

PubMed Central

Mun, Hyeona; Lee, Kyu Hyoung; Kim, Suk Jun; Kim, Jong-Young; Lee, Jeong Hoon; Lim, Jae-Hong; Park, Hee Jung; Roh, Jong Wook; Kim, Sung Wng

2015-01-01

The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb) and dopants (Fe). An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects. PMID:28787981

Review on first-principles study of defect properties of CdTe as a solar cell absorber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang

2016-07-15

CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is Te-2+/Cd, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generallymore » will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve 10^17 cm-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of 10^17 cm-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.« less

Gradient Self-Doped CuBi2O4 with Highly Improved Charge Separation Efficiency.

PubMed

Wang, Fuxian; Septina, Wilman; Chemseddine, Abdelkrim; Abdi, Fatwa F; Friedrich, Dennis; Bogdanoff, Peter; van de Krol, Roel; Tilley, S David; Berglund, Sean P

2017-10-25

A new strategy of using forward gradient self-doping to improve the charge separation efficiency in metal oxide photoelectrodes is proposed. Gradient self-doped CuBi 2 O 4 photocathodes are prepared with forward and reverse gradients in copper vacancies using a two-step, diffusion-assisted spray pyrolysis process. Decreasing the Cu/Bi ratio of the CuBi 2 O 4 photocathodes introduces Cu vacancies that increase the carrier (hole) concentration and lowers the Fermi level, as evidenced by a shift in the flat band toward more positive potentials. Thus, a gradient in Cu vacancies leads to an internal electric field within CuBi 2 O 4 , which can facilitate charge separation. Compared to homogeneous CuBi 2 O 4 photocathodes, CuBi 2 O 4 photocathodes with a forward gradient show highly improved charge separation efficiency and enhanced photoelectrochemical performance for reduction reactions, while CuBi 2 O 4 photocathodes with a reverse gradient show significantly reduced charge separation efficiency and photoelectrochemical performance. The CuBi 2 O 4 photocathodes with a forward gradient produce record AM 1.5 photocurrent densities for CuBi 2 O 4 up to -2.5 mA/cm 2 at 0.6 V vs RHE with H 2 O 2 as an electron scavenger, and they show a charge separation efficiency of 34% for 550 nm light. The gradient self-doping accomplishes this without the introduction of external dopants, and therefore the tetragonal crystal structure and carrier mobility of CuBi 2 O 4 are maintained. Lastly, forward gradient self-doped CuBi 2 O 4 photocathodes are protected with a CdS/TiO 2 heterojunction and coated with Pt as an electrocatalyst. These photocathodes demonstrate photocurrent densities on the order of -1.0 mA/cm 2 at 0.0 V vs RHE and evolve hydrogen with a faradaic efficiency of ∼91%.

Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, Shraddha; Acharya, Smita, E-mail: saha275@yahoo.com

2016-05-23

In our present attempt, Pb{sub (1-x)}Bi{sub x}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} [PBZT] {where x = 0, 0.05, 0.1} is synthesized by sol-gel route. Effect of Bi addition on structure, sinterability and dielectric properties are observed. The presence of morphotropic phase boundary (coexistence of tetragonal and rhombohedral symmetry) is confirmed by X-ray diffraction. Enhancement of sinterability after Bi doping is observed through a systematic sintering program. Frequency and temperature dependent dielectric constant are studied. Bi doping in PZT is found to enhance room temperature dielectric constant. However, at high temperature the dielectric constant of pure PZT is more than that of dopedmore » PZT.« less

Study of A-site doping of SrBi4Ti4O15 Bi-layered compounds using micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Hao, H.; Liu, H. X.; Cao, M. H.; Min, X. M.; Ouyang, S. X.

2006-10-01

The temperature-dependent Raman spectra of Mg- and La-doped SrBi4Ti4O15 (SBT) were studied in the range 40 590 °C. A quantum chemistry calculation was employed to estimate these two substitution states. It was found that A-site doping in this study not only caused multiplicative substitution states, but also the Raman spectra changed with the substitution amount. In a La-doped perovskite-like layer, La would occupy the Bi site when x>0.10 and the 314 and 550 cm-1 modes related to the rotating and tilting of the TiO6 octahedron firstly became wide and then became sharp. With the increase of the substitution amount, both substitution states of Mg-doped SBT lead to the widening of 270 and 520 cm-1 peaks.

Crystal Structure, Magnetic and Optical Properties of Mn-Doped BiFeO₃ by Hydrothermal Synthesis.

PubMed

Zhang, Ning; Wei, Qinhua; Qin, Laishun; Chen, Da; Chen, Zhi; Niu, Feng; Wang, Jiangying; Huanag, Yuexiang

2017-01-01

In this paper, Mn doped BiFeO₃ were firstly synthesized by hydrothermal process. The influence of Mn doping on structural, optical and magnetic properties of BiFeO₃ was studied. The different amounts of Mn doping in BiFeO₃ were characterized by X-ray diffraction, Scanning Electron Microscope, Energy Dispersive X-ray Spectroscope, UV-Vis diffuse reflectance spectroscopy and magnetic measurements. The X-ray diffraction (XRD) patterns confirmed the formation of pure phase rhombohedral structure in BiFe(1−x) Mn (x) O₃ (x = 0.01, 0.03, 0.05, 0.07) samples. The morphologies and chemical compositions of as-prepared samples could be observed by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray Spectroscope (EDS). A relative large saturated magnetization (Ms) of 0.53 emu/g for x = 0.07 sample was obtained at room temperature, which is considered to be Mn ions doping. UV-Vis diffuse reflectance spectroscopy showed strong absorption of light in the range of 200–1000 nm, indicating the optical band gap in the visible region for these samples. This implied that BiFe(1−x) Mn(x)O₃ may be a potential photocatalyst for utilizing solar energy.

Effects of ion doping at different sites on electrical properties of multiferroic BiFeO3 ceramics

NASA Astrophysics Data System (ADS)

Yu, Benfang; Li, Meiya; Liu, Jun; Guo, Dongyun; Pei, Ling; Zhao, Xingzhong

2008-03-01

Pure, La3+ doped at A site, V5+ doped at B site, and La3+ and V5+ co-doped multiferroic BiFeO3 ceramics: BiFeO3 (BFO), Bi0.85La0.15FeO3 (BLF), BiFe0.97V0.03O3 (BFV), Bi0.85La0.15Fe0.97V0.03O3 (BLFV), etc were successfully prepared by a rapid liquid sintering technique. X-ray diffraction indicated that these ceramics were of polycrystalline perovskite structures, accompanied with a tiny residual Bi2O3 phase. It was found that, among these ceramics, BLFV ceramic exhibited the best electrical properties. The leakage current density of BLFV ceramic was only 2.1 × 10-6 A cm-2 at 10 kV cm-1, two and one orders of magnitude lower than those of the BLF and BFV ceramics, respectively. In the measuring frequency of 4 KHz-1 MHz, the dielectric constants and losses of this sample exhibited slight variation and the lowest loss tangent was 0.08. The sample had a relatively saturated ferroelectric hysteresis loop. These suggested that the co-doped BiFeO3 ceramic by La3+ and V5+ at A and B sites showed advantages in application over the pure BFO, doped BLF and BFV ceramics, respectively.

Creation and Analysis of Atomic Structures for CdTe Bi-crystal Interfaces by the Grain Boundary Genie

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buurma, Christopher; Sen, Fatih G.; Paulauskas, Tadas

2015-01-01

Grain boundaries (GB) in poly-CdTe solar cells play an important role in species diffusion, segregation, defect formation, and carrier recombination. While the creation of specific high-symmetry interfaces can be straight forward, the creation of general GB structures in many material systems is difficult if periodic boundary conditions are to be enforced. Here we describe a novel algorithm and implementation to generate initial general GB structures for CdTe in an automated way, and we investigate some of these structures using density functional theory (DFT). Example structures include those with bi-crystals already fabricated for comparison, and those planning to be investigated inmore » the future.« less

Doping dependence of low-energy quasiparticle excitations in superconducting Bi2212.

PubMed

Ino, Akihiro; Anzai, Hiroaki; Arita, Masashi; Namatame, Hirofumi; Taniguchi, Masaki; Ishikado, Motoyuki; Fujita, Kazuhiro; Ishida, Shigeyuki; Uchida, Shinichi

2013-12-05

: The doping-dependent evolution of the d-wave superconducting state is studied from the perspective of the angle-resolved photoemission spectra of a high-Tc cuprate, Bi2Sr2CaCu2 O8+δ (Bi2212). The anisotropic evolution of the energy gap for Bogoliubov quasiparticles is parametrized by critical temperature and superfluid density. The renormalization of nodal quasiparticles is evaluated in terms of mass enhancement spectra. These quantities shed light on the strong coupling nature of electron pairing and the impact of forward elastic or inelastic scatterings. We suggest that the quasiparticle excitations in the superconducting cuprates are profoundly affected by doping-dependent screening.

Doping dependence of low-energy quasiparticle excitations in superconducting Bi2212

PubMed Central

2013-01-01

The doping-dependent evolution of the d-wave superconducting state is studied from the perspective of the angle-resolved photoemission spectra of a high-Tc cuprate, Bi2Sr2CaCu2 O8+δ (Bi2212). The anisotropic evolution of the energy gap for Bogoliubov quasiparticles is parametrized by critical temperature and superfluid density. The renormalization of nodal quasiparticles is evaluated in terms of mass enhancement spectra. These quantities shed light on the strong coupling nature of electron pairing and the impact of forward elastic or inelastic scatterings. We suggest that the quasiparticle excitations in the superconducting cuprates are profoundly affected by doping-dependent screening. PMID:24314035

Characterization of Sb-doped Bi(2)UO(6) solid solutions by X-ray diffraction and X-ray absorption spectroscopy.

PubMed

Misra, N L; Yadav, A K; Dhara, Sangita; Mishra, S K; Phatak, Rohan; Poswal, A K; Jha, S N; Sinha, A K; Bhattacharyya, D

2013-01-01

The preparation and characterization of Sb-doped Bi(2)UO(6) solid solutions, in a limited composition range, is reported for the first time. The solid solutions were prepared by solid-state reactions of Bi(2)O(3), Sb(2)O(3) and U(3)O(8) in the required stoichiometry. The reaction products were characterized by X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) measurements at the Bi and U L(3) edges. The XRD patterns indicate the precipitation of additional phases in the samples when Sb doping exceeds 4 at%. The chemical shifts of the Bi absorption edges in the samples, determined from the XANES spectra, show a systematic variation only up to 4 at% of Sb doping and support the results of XRD measurements. These observations are further supported by the local structure parameters obtained by analysis of the EXAFS spectra. The local structure of U is found to remain unchanged upon Sb doping indicating that Sb(+3) ions replace Bi(+3) during the doping of Bi(2)UO(6) by Sb.

FABRICATION AND PHOTOCATALYTIC PROPERTIES OF TiO2 NANOFILMS CO-DOPED WITH Fe3+ AND Bi3+ IONS

NASA Astrophysics Data System (ADS)

Gao, Qiongzhi; Liu, Xin; Liu, Wei; Liu, Fang; Fang, Yueping; Zhang, Shiying; Zhou, Wuyi

2016-12-01

In this work, the titanium dioxide (TiO2) nanofilms co-doped with Fe3+ and Bi3+ ions were successfully fabricated by the sol-gel method with dip-coating process. Methylene blue was used as the target degradation chemical to study the photocatalytic properties affected by different doping contents of Fe3+ and Bi3+ ions. The samples were characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and infrared (IR) spectroscopy. The results indicated that both pure TiO2 nanofilms and single-doped samples possessed the photocatalytic activity in degradation of methylene blue. However, when the nanofilms co-doped with Fe3+ and Bi3+ ions were fabricated at the molar ratio of 3:1 (Fe3+:Bi3+), they exhibited the best photocatalytic activity after the heat treatment at 500∘C for 2h. The wettability property test indicated that the TiO2 nanofilms co-doped with Fe3+ and Bi3+ ions in the molar ratio 3:1 owned an excellent hydrophilic property.

Broad band and enhanced photocatalytic behaviour of Ho3+-doped Bi2O3 micro-rods

NASA Astrophysics Data System (ADS)

Prasad, Neena; Karthikeyan, Balasubramanian

2018-06-01

Band-gap-tuned Bi2O3 micro-rods were synthesized using simple co-precipitation method by doping 5 wt% Ho3+ to mitigate the concentration of toxic dye from the polluted water using it as a photocatalyst. Structure and morphology of the prepared samples were identified using powder X-ray diffraction technique and scanning electron microscopy (SEM). Elemental composition and chemical state of the prepared samples were analyzed from the X-ray photoelectron spectroscopy (XPS). Considerable absorption in IR region was observed for Ho3+ doped Bi2O3 due to the electronic transitions of 5I8→5F4, 5I8→5F5, and 5I8→5I5, 5I6. The excellent ultra-violet (UV), white and infrared light (IR)-driven photocatalytic activity were suggested for pure and doped Bi2O3 samples. Ho3+-doped Bi2O3 micro-rods exhibits a better photocatalytic activity under white light irradiation. The consequence of the bandgap and the synergetic effect of Ho3+ and Bi2O3 on the photocatalytic degradation of MB were investigated.

Rotational Symmetry Breaking in a Trigonal Superconductor Nb-doped Bi 2 Se 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asaba, Tomoya; Lawson, B. J.; Tinsman, Colin

2017-01-27

The search for unconventional superconductivity has been focused on materials with strong spin-orbit coupling and unique crystal lattices. Doped bismuth selenide (Bi 2Se 3) is a strong candidate, given the topological insulator nature of the parent compound and its triangular lattice. The coupling between the physical properties in the superconducting state and its underlying crystal symmetry is a crucial test for unconventional superconductivity. In this paper, we report direct evidence that the superconducting magnetic response couples strongly to the underlying trigonal crystal symmetry in the recently discovered superconductor with trigonal crystal structure, niobium (Nb)-doped Bi 2Se 3. As a result,more » the in-plane magnetic torque signal vanishes every 60°. More importantly, the superconducting hysteresis loop amplitude is enhanced along one preferred direction, spontaneously breaking the rotational symmetry. This observation indicates the presence of nematic order in the superconducting ground state of Nb-doped Bi 2Se 3.« less

Nematic topological superconducting phase in Nb-doped Bi2Se3

NASA Astrophysics Data System (ADS)

Shen, Junying; He, Wen-Yu; Yuan, Noah Fan Qi; Huang, Zengle; Cho, Chang-woo; Lee, Seng Huat; Hor, Yew San; Law, Kam Tuen; Lortz, Rolf

2017-10-01

A nematic topological superconductor has an order parameter symmetry, which spontaneously breaks the crystalline symmetry in its superconducting state. This state can be observed, for example, by thermodynamic or upper critical field experiments in which a magnetic field is rotated with respect to the crystalline axes. The corresponding physical quantity then directly reflects the symmetry of the order parameter. We present a study on the superconducting upper critical field of the Nb-doped topological insulator NbxBi2Se3 for various magnetic field orientations parallel and perpendicular to the basal plane of the Bi2Se3 layers. The data were obtained by two complementary experimental techniques, magnetoresistance and DC magnetization, on three different single crystalline samples of the same batch. Both methods and all samples show with perfect agreement that the in-plane upper critical fields clearly demonstrate a two-fold symmetry that breaks the three-fold crystal symmetry. The two-fold symmetry is also found in the absolute value of the magnetization of the initial zero-field-cooled branch of the hysteresis loop and in the value of the thermodynamic contribution above the irreversibility field, but also in the irreversible properties such as the value of the characteristic irreversibility field and in the width of the hysteresis loop. This provides strong experimental evidence that Nb-doped Bi2Se3 is a nematic topological superconductor similar to the Cu- and Sr-doped Bi2Se3.

Influence of Bi(3+)-doping on the magnetic and Mössbauer properties of spinel cobalt ferrite.

PubMed

Gore, Shyam K; Mane, Rajaram S; Naushad, Mu; Jadhav, Santosh S; Zate, Manohar K; Alothman, Z A; Hui, Biz K N

2015-04-14

The influence of Bi(3+)-doping on the magnetic and Mössbauer properties of cobalt ferrite (CoFe2O4), wherein the Fe(3+) ions are replaced by the Bi(3+) ions to form CoBixFe2-xO4 ferrites, where x = 0.0, 0.05, 0.1, 0.15 or 0.2, has been investigated. The structural and morphological properties of undoped and doped ferrites, synthesized chemically through a self-igniting sol-gel method, are initially screened using X-ray diffraction, scanning electron microscopy and Fourier transform infrared spectroscopy measurements. The changes in magnetic moment of ions, their coupling with neighboring ions and cation exchange interactions are confirmed from the Mössbauer spectroscopy analysis. The effect of Bi(3+)-doping on the magnetic properties of CoFe2O4 ferrite is examined from the vibrating sample magnetometry spectra. Saturation magnetization and coercivity values are increased initially and then decreased, as result of Bi(3+)-doping. The obtained results with improved saturation magnetization (from 26.36 to 44.96 emu g(-1)), coercivity (from 1457 to 1863 Oe) and remanence magnetization (from 14.48 to 24.63 emu g(-1)) on 0.1-0.15 mol Bi(3+)-doping of CoBixFe2-xO4 demonstrate the usefulness for magnetic recording and memory devices.

Understanding arsenic incorporation in CdTe with atom probe tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burton, G. L.; Diercks, D. R.; Ogedengbe, O. S.

Overcoming the open circuit voltage deficiency in Cadmium Telluride (CdTe) photovoltaics may be achieved by increasing p-type doping while maintaining or increasing minority carrier lifetimes. Here, routes to higher doping efficiency using arsenic are explored through an atomic scale understanding of dopant incorporation limits and activation in molecular beam epitaxy grown CdTe layers. Atom probe tomography reveals spatial segregation into nanometer scale clusters containing > 60 at% As for samples with arsenic incorporation levels greater than 7-8 x 10^17 cm-3. The presence of arsenic clusters was accompanied by crystal quality degradation, particularly the introduction of arsenic-enriched extended defects. Post-growth annealingmore » treatments are shown to increase the size of the As precipitates and the amount of As within the precipitates.« less

Understanding arsenic incorporation in CdTe with atom probe tomography

DOE PAGES

Burton, G. L.; Diercks, D. R.; Ogedengbe, O. S.; ...

2018-03-22

Overcoming the open circuit voltage deficiency in Cadmium Telluride (CdTe) photovoltaics may be achieved by increasing p-type doping while maintaining or increasing minority carrier lifetimes. Here, routes to higher doping efficiency using arsenic are explored through an atomic scale understanding of dopant incorporation limits and activation in molecular beam epitaxy grown CdTe layers. Atom probe tomography reveals spatial segregation into nanometer scale clusters containing > 60 at% As for samples with arsenic incorporation levels greater than 7-8 x 10^17 cm-3. The presence of arsenic clusters was accompanied by crystal quality degradation, particularly the introduction of arsenic-enriched extended defects. Post-growth annealingmore » treatments are shown to increase the size of the As precipitates and the amount of As within the precipitates.« less

Synthesis and thermoelectric property of Ca-doped n-type Bi85 Sb 15 alloy

NASA Astrophysics Data System (ADS)

Kadel, Kamal; Li, Wenzhi; Joshi, Giri; Ren, Zhifeng

2011-03-01

Bi 1-x Sb x (0.09 x 0.20) alloysaren - typesemiconductingmaterialsthatexhibitagoodthermoelectricpropertyatlowtemperature , around 80 K . InthepresentworkweinvestigatedthethermoelectricpropertiesofundopedBi 85 Sb 15 anddifferentCa - dopedBi 85 Sb 15 Ca x alloys (x = 0.5 , 2 , and 5) synthesizedviaarc - meltingfirstandfollowedbyballmillingandhotpressing . EffectofdifferentCadopinglevelsontransportpropertiesofBi 85 Sb 15 alloyshasbeeninvestigated . ItisfoundthatthermalconductivitydecreaseswithincreasingCa . ElectricaltransportmeasurementsshowthatpowerfactorincreaseswithdopinglevelofCauptoBi 85 Sb 15 Ca 2 andthendecreases , yieldingthemaximumvalueofpowerfactorof 3.8 × 10 -3 Wm -1 K -2 andZTof 0.39 atroomtemperatureforBi 85 Sb 15 Ca 2 . Properties at below room temperature will also be presented.

Electronic structure and x-ray magnetic circular dichroism in Mn-doped topological insulators Bi2Se3 and Bi2Te3

NASA Astrophysics Data System (ADS)

Antonov, V. N.; Bekenov, L. V.; Uba, S.; Ernst, A.

2017-12-01

We studied the structural, electronic, and magnetic properties of Mn-doped topological insulators Bi2Se3 and Bi2Te3 within the density-functional theory (DFT) using the generalized gradient approximation (GGA) in the framework of the fully relativistic spin-polarized Dirac linear muffin-tin orbital band-structure method. The x-ray absorption spectra (XAS) and x-ray magnetic circular dichroism at the Mn K and L2 ,3 edges were investigated theoretically from first principles. The calculated results are in good agreement with experimental data. The complex fine structure of the Mn L2 ,3 XAS in Mn-doped Bi2Se3 and Bi2Te3 was found to be not compatible with a pure Mn3 + valency state. Its interpretation demands mixed valent states. The theoretically calculated x-ray emission spectra at the Mn K and L2 ,3 edges are also presented and analyzed.

Design of epitaxial CdTe solar cells on InSb substrates

DOE PAGES

Song, Tao; Kanevce, Ana; Sites, James R.

2015-11-01

Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a closemore » lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.« less

First principles study of the magnetic properties and charge transfer of Ni-doped BiFeO3

NASA Astrophysics Data System (ADS)

Sun, Yuan; Sun, Zhenghao; Wei, Ren; Huang, Yuxin; Wang, Lili; Leng, Jing; Xiang, Peng; Lan, Min

2018-03-01

We present a first-principles study of electronic structures and magnetic properties in Ni-doped BiFeO3 using the density functional theory + U methods. The BiNixFe1-xO3 (x = 0.125, 0.25, 0.5) multiferroic ceramics represent ferromagnetic properties due to the ferrimagnetic order in Ni-O-Fe, and the magnetic moment rises with increase in Ni doping concentration agreeing well with experimental results. Ni atoms prefer to occupy the diagonal positions in the quasi-plane Ni-O-Fe eight-membered ring. Charge transfer from Bi 6s state to Ni 3d state through O 2p orbital lead to the 2+ oxidation state of Ni, indicating high Néel temperatures of BiNixFe1-xO3, and the electronic state of the system can be described as Bi4+xBi3+1-xNi2+xFe3+1-xO3. The spin polarization of Bi 6s state and O 2p state near the Fermi level contributes to the total magnetic moment. A spin-polarized acceptor level of about 0.4 eV constituted by Bi 6s state and O 2p state is found, which is responsible for the increase in leakage current of Ni-doped BiFeO3.

High spin state driven magnetism and thermoelectricity in Mn doped topological insulator Bi2Se3

NASA Astrophysics Data System (ADS)

Maurya, V. K.; Dong, C. L.; Chen, C. L.; Asokan, K.; Patnaik, S.

2018-06-01

We report on the synthesis, and structural - magnetic characterizations of Mn doped Bi2Se3 towards achieving a magnetically doped topological insulator. High quality single crystals of MnxBi2-xSe3 (x = 0, 0.03, 0.05, 0.1) are grown and analysed by X-ray diffraction (XRD), Low Energy Electron Diffraction (LEED), Scanning electron microscopy (SEM), and X-ray absorption near-edge structure spectroscopy (XANES). Magnetic properties of these samples under ZFC-FC protocol and isothermal magnetization confirm ferromagnetic correlation above x = 0.03 value. XANES measurements confirm that the dopant Mn is in Mn2+ state. This is further reconfirmed to be in high spin state by fitting magnetic data with Brillouin function for J = 5/2. Both Hall and Seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of Mn doping. We propose Mn doped Bi2Se3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.

Dynamic fatigue behaviour of Ag-doped Bi-2212 textured thin rods

NASA Astrophysics Data System (ADS)

Madre, M. A.; Rasekh, Sh; Diez, J. C.; Sotelo, A.

2009-03-01

The flexural strength of 1 wt.% Ag-doped Bi2Sr2CaCu2O8+δ thin rods textured by a laser heated floating zone was measured as a function of the environmental conditions (air versus water) at room temperature. Loading rates spanning three orders of magnitude (1, 10 and 100 μm/min) were used to explore their susceptibility to the environmental conditions. These mechanical tests were completed with electrical characterization (critical current at 77K and resistivity from 77 to 300 K) of samples submerged in distilled water for different time lengths (0, 12 and 120h). While Bi2Sr2CaCu2O8+δ has been shown, in previous works, to be unstable during contact with water molecules, the Ag-doped Bi-2212 textured rods tested in this work are very inert to the water environment, with respect to their mechanical and electrical properties, due to the presence of a narrow (approx150 μm) low textured outer ring formed in the growth process.

Heavy doping of CdTe single crystals by Cr ion implantation

NASA Astrophysics Data System (ADS)

Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

2018-03-01

Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

Structural transitions and multiferroic properties of high Ni-doped BiFeO3

NASA Astrophysics Data System (ADS)

Betancourt-Cantera, L. G.; Bolarín-Miró, A. M.; Cortés-Escobedo, C. A.; Hernández-Cruz, L. E.; Sánchez-De Jesús, F.

2018-06-01

Nickel doped bismuth ferrite powders, BiFe1-x NixO3 (0 ≤ x ≤ 0.5), were synthesized by high-energy ball milling followed by an annealing at 700 °C. A detailed study about the substitution of Fe3+ by Ni2+ on the crystal structure and multiferroic properties is presented. The X-ray diffraction patterns reveal the formation of rhombohedral structure with small amounts of Bi2Fe4O9 as a secondary phase for x < 0.1. Also it is inferred the stabilization of a Bi25FeO40, sillenite phase, as the amount of Ni2+ substitution increases, reaching up 95.23% of sillenite for x = 0.5. The magnetic behavior indicates the frustration of the G-antiferromagnetic order typical of the un-doped BiFeO3, caused by the presence of small amounts of Ni2+ (x < 0.1) on the structure. The DC conductivity exhibited a little increment with increasing Ni content (up to x = 0.1). Although the conductivity increases, for nickel concentrations of 0.2-0.5, the bismuth ferrites doped with nickel retain their property of being an electrical insulating material. Behavior modifications of electrical conductivity, permittivity and dielectric loss versus frequency are related with crystal structure transformations, when nickel concentration is increased.

Electronic conduction in doped multiferroic BiFeO3

NASA Astrophysics Data System (ADS)

Yang, Chan-Ho; Seidel, Jan; Kim, Sang-Yong; Gajek, M.; Yu, P.; Holcomb, M. B.; Martin, L. W.; Ramesh, R.; Chu, Y. H.

2009-03-01

Competition between multiple ground states, that are energetically similar, plays a key role in many interesting material properties and physical phenomena as for example in high-Tc superconductors (electron kinetic energy vs. electron-electron repulsion), colossal magnetoresistance (metallic state vs. charge ordered insulating state), and magnetically frustrated systems (spin-spin interactions). We are exploring the idea of similar competing phenomena in doped multiferroics by control of band-filling. In this paper we present systematic investigations of divalent Ca doping of ferroelectric BiFeO3 in terms of structural and electronic conduction properties as well as diffusion properties of oxygen vacancies.

Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ.

PubMed

Edmonds, Mark T; Hellerstedt, Jack; O'Donnell, Kane M; Tadich, Anton; Fuhrer, Michael S

2016-06-29

We perform low-temperature transport and high-resolution photoelectron spectroscopy on 20 nm thin film topological Dirac semimetal Na3Bi grown by molecular beam epitaxy. We demonstrate efficient electron depletion ∼10(13) cm(-2) of Na3Bi via vacuum deposition of molecular F4-TCNQ without degrading the sample mobility. For samples with low as-grown n-type doping (1 × 10(12) cm(-2)), F4-TCNQ doping can achieve charge neutrality and even a net p-type doping. Photoelectron spectroscopy and density functional theory are utilized to investigate the behavior of F4-TCNQ on the Na3Bi surface.

Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi 2Te 3 topological insulator thin films

DOE PAGES

Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

2016-07-01

Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi 2Te 3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi 2Te 3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor.more » The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi 2Te 3 with the previously studied Mn-doped Bi 2Te 3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. Furthermore, the implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.« less

Design Strategies for High-Efficiency CdTe Solar Cells

NASA Astrophysics Data System (ADS)

Song, Tao

With continuous technology advances over the past years, CdTe solar cells have surged to be a leading contributor in thin-film photovoltaic (PV) field. While empirical material and device optimization has led to considerable progress, further device optimization requires accurate device models that are able to provide an in-depth understanding of CdTe device physics. Consequently, this thesis is intended to develop a comprehensive model system for high-efficiency CdTe devices through applying basic design principles of solar cells with numerical modeling and comparing results with experimental CdTe devices. The CdTe absorber is central to cell performance. Numerical simulation has shown the feasibility of high energy-conversion efficiency, which requires both high carrier density and long minority carrier lifetime. As the minority carrier lifetime increases, the carrier recombination at the back surface becomes a limitation for cell performance with absorber thickness < 3 microm. Hence, either a thicker absorber or an appropriate back-surface-field layer is a requisite for reducing the back-surface recombination. When integrating layers into devices, more careful design of interfaces is needed. One consideration is the emitter/absorber interface. It is shown that a positive conduction-band offset DeltaEC ("spike") at the interface is beneficial to cell performance, since it can induce a large valence-band bending which suppresses the hole injection near the interface for the electron-hole recombination, but too large a spike is detrimental to photocurrent transport. In a heterojunction device with many defects at the emitter/absorber interface (high SIF), a thin and highly-doped emitter can induce strong absorber inversion and hence help maintain good cell performance. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. In terms of specific emitter materials, the calculations

Effective visible light-active boron and europium co-doped BiVO4 synthesized by sol-gel method for photodegradion of methyl orange.

PubMed

Wang, Min; Che, Yinsheng; Niu, Chao; Dang, Mingyan; Dong, Duo

2013-11-15

Eu-B co-doped BiVO4 visible-light-driven photocatalysts have been synthesized using the sol-gel method. The resulting materials were characterized by a series of joint techniques, including XPS, XRD, SEM, BET, and UV-vis DRS analyses. Compared with BiVO4 and B-BiVO4 photocatalysts, the Eu-B-BiVO4 photocatalysts exhibited much higher photocatalytic activity for methyl orange (MO) degradation under visible light irradiation. The optimal Eu doping content is 0.8 mol%. It was revealed that boron and europium were doped into the lattice of BiVO4 and this led to more surface oxygen vacancies, high specific surface areas, small crystallite size, a narrower band gap and intense light absorbance in the visible region. The doped Eu(III) cations can help in the separation of photogenerated electrons. The synergistic effects of boron and europium in doped BiVO4 were the main reason for improving visible light photocatalytic activity. Copyright © 2013 Elsevier B.V. All rights reserved.

Hydrothermal synthesis of Nd3+-doped heterojunction ms/tz-BiVO4 and its enhanced photocatalytic performance

NASA Astrophysics Data System (ADS)

Chen, Ruizhi; Wang, Weixuan; Jiang, Dongmei; Chu, Xiaoxuan; Ma, Xueming; Zhan, Qingfeng

2018-06-01

BiVO4 photocatalysts with different Nd3+ doping content were prepared by a hydrothermal method with varied hydrothermal reaction time. The effects of Nd3+ doping on phase transformation, morphology, chemical valence, optical properties and photocatalytic activities were investigated. With different reaction time, phase transformation from tetragonal zircon (tz-BiVO4) to monoclinic scheelite (ms-BiVO4) could be found, and Nd3+ doping played a suppressive role in this process. Scanning electron microscopy showed the morphology evolved from irregular structure to rod-like shapes with phase transformation. The photoluminescence induced by Nd3+ doping could be confirmed by UV-vis diffuse reflectance spectra. Photocatalytic performance tests had been performed under simulated solar conditions and sample with 1 at% Nd3+ doping and 5 h reaction time showed the best performance (89% degradation rate in 90 min). The pH also showed great influence on morphology and phase transformation of samples. Finally, the phyotocatalytic mechanism and effects of Nd3+ in phase transformation were discussed.

Metastability and reliability of CdTe solar cells

NASA Astrophysics Data System (ADS)

Guo, Da; Brinkman, Daniel; Shaik, Abdul R.; Ringhofer, Christian; Vasileska, Dragica

2018-04-01

Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal

Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

NASA Astrophysics Data System (ADS)

Ojo, A. A.; Dharmadasa, I. M.

2017-08-01

Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells

DOE PAGES

Kanevce, A.; Reese, Matthew O.; Barnes, T. M.; ...

2017-06-06

CdTe devices have reached efficiencies of 22% due to continuing improvements in bulk material properties, including minority carrier lifetime. Device modeling has helped to guide these device improvements by quantifying the impacts of material properties and different device designs on device performance. One of the barriers to truly predictive device modeling is the interdependence of these material properties. For example, interfaces become more critical as bulk properties, particularly, hole density and carrier lifetime, increase. We present device-modeling analyses that describe the effects of recombination at the interfaces and grain boundaries as lifetime and doping of the CdTe layer change. Themore » doping and lifetime should be priorities for maximizing open-circuit voltage (V oc) and efficiency improvements. However, interface and grain boundary recombination become bottlenecks for device performance at increased lifetime and doping levels. In conclusion, this work quantifies and discusses these emerging challenges for next-generation CdTe device efficiency.« less

Thermoelectric Properties of Bi2Te2Se Compensated by Native Defects and Sn Doping

NASA Astrophysics Data System (ADS)

Fuccillo, M. K.; Jia, Shuang; Charles, M. E.; Cava, R. J.

2013-06-01

In Bi2Te2Se the defect chemistry involves native defects that compete such that they can either exchange dominance or else significantly compensate each other. Here we show how the net carrier concentration, n - p, which depends on the relative amounts of these defects and is readily obtained from Hall data, can be used as a fundamental materials parameter to describe the varied behavior of the thermoelectric properties as a function of compensation. We report the effects of tuning this parameter over multiple orders of magnitude by hole-doping the n-type material Bi2Te2Se0.995, which is already significantly compensated because of its Se deficiency. Crystals with different levels of hole doping were achieved by two separate approaches, namely by selecting pieces from different locations in an undoped crystal in which a systematic carrier concentration gradient had been induced by its growth conditions, and alternatively by doping with Sn for Bi. The thermoelectric power factors for Bi2- x Sn x Te2Se0.995 for x = 0, 0.002, 0.005, 0.010, and 0.040 are reported, and the dependence of the transport properties on the extent of compensation is discussed.

A new V-doped Bi2(O,S)3 oxysulfide catalyst for highly efficient catalytic reduction of 2-nitroaniline and organic dyes.

PubMed

Abay, Angaw Kelemework; Kuo, Dong-Hau; Chen, Xiaoyun; Saragih, Albert Daniel

2017-12-01

A new type of convenient, and environmentally friendly, Vanadium (V)-doped Bi 2 (O,S) 3 oxysulfide catalyst with different V contents was successfully synthesized via a simple and facile method. The obtained V-doped Bi 2 (O,S) 3 solid solution catalysts were fully characterized by conventional methods. The catalytic performance of the samples was tested by using the reduction of 2-nitroaniline (2-NA) in aqueous solution. The reduction/decolorization of methylene blue (MB) and rhodamine B (RhB) was also chosen to evaluate the universality of catalysts. It was observed that the introduction of V can improve the catalytic performance, and 20%V-Bi 2 (O,S) 3 was found to be the optimal V doping concentration for the reduction of 2-NA, MB, and RhB dyes. For comparative purposes, a related V-free Bi 2 (O, S) 3 oxysulfide material was synthesized and tested as the catalyst. The superior activity of V-doped Bi 2 (O,S) 3 over pure Bi 2 (O,S) 3 was ascribed mainly to an increase in active sites of the material and also due to the presence of synergistic effects. The presence of V 5+ as found from XPS analysis may interact with Bi atoms and enhancing the catalytic activity of the sample. In the catalytic reduction of 2-NA, MB and RhB, the obtained V-doped Bi 2 (O,S) 3 oxysulfide catalyst exhibited excellent catalytic activity as compared with other reported catalysts. Furthermore this highly efficient, low-cost and easily reusable V-doped Bi 2 (O,S) 3 catalyst is anticipated to be of great potential in catalysis in the future. Copyright © 2017 Elsevier Ltd. All rights reserved.

An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3

NASA Astrophysics Data System (ADS)

Smylie, M. P.; Willa, K.; Ryan, K.; Claus, H.; Kwok, W.-K.; Qiu, Y.; Hor, Y. S.; Welp, U.

2017-12-01

We report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb0.25Bi2Se3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues CuxBi2Se3 and SrxBi2Se3 where smooth suppression of Tc is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi2Se3 family are believed to be single-band.

Novel Contact Materials for Improved Performance CdTe Solar Cells Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rockett, Angus; Marsillac, Sylvain; Collins, Robert

This program has explored a number of novel materials for contacts to CdTe solar cells in order to reduce the back contact Schottky barrier to zero and produce an ohmic contact. The project tested a wide range of potential contact materials including TiN, ZrN, CuInSe 2:N, a-Si:H and alloys with C, and FeS2. Improved contacts were achieved with FeS 2. As part of understanding the operation of the devices and controlling the deposition processes, a number of other important results were obtained. In the process of this project and following its conclusion it led to research that resulted in sevenmore » journal articles, nine conference publications, 13 talks presented at conferences, and training of eight graduate students. The seven journal articles were published in 2015, 2016, and 2017 and have been cited, as of March 2018, 52 times (one cited 19 times and two cited 11 times). We demonstrated high levels of doping of CIS with N but electrical activity of the resulting N was not high and the results were difficult to reproduce. Furthermore, even with high doping the contacts were not good. Annealing did not improve the contacts. A-Si:H was found to produce acceptable but unstable contacts, degrading even over a day or two, apparently due to H incorporation into the CdTe. Alloying with C did not improve the contacts or stability. The transition metal nitrides produced Schottky type contacts for all materials tested. While these contacts were found to be unsatisfactory, we investigated FeS 2 and found this material to be effective and comparable to the best contacts currently available. The contacts were found to be chemically stable under heat treatment and preferable to Cu doped contacts. Thus, we demonstrated an improved contact material in the course of this project. In addition, we developed new ways of controlling the deposition of CdTe and other materials, demonstrated the nature of defects in CdTe, and studied the distribution of conductivity and carrier

Removal of Nonylphenol by using Fe-doped NaBiO3 compound as an efficient visible-light-heterogeneous Fenton-like catalyst.

PubMed

An, Junjian; Huang, Mengxuan; Wang, Mengling; Chen, Jiali; Wang, Peng

2018-04-12

Fe-doped NaBiO 3 nanoscaled compounds were prepared by hydrothermal method and evaluated as a highly efficient photo-Fenton-like catalyst under visible light irradiation. The Fe-doped NaBiO 3 compound had a specific surface area of 41.42 m 2  g -1 , which is considerably larger than that of NaBiO 3 nanoparticles (28.81 m 2  g -1 ). The compound exhibited an excellent visible light-Fenton-like catalysis activity, which is influenced by the iron content of the compound and the pH value of the solution. Under the optimal conditions, the Fe-doped NaBiO 3 compound led to fast degradation of Nonylphenol with an apparent rate constant of 5.71 × 10 -2 min -1 , which was 8.23-fold of that achieved by using NaBiO 3 . The significantly enhanced visible light-Fenton-like catalytic property of the Fe-doped NaBiO 3 was attributed to the large surface area and the high adsorption capacity of the compound, and the Fenton catalytic ability of iron in the compound.

Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films.

PubMed

Yang, C-H; Seidel, J; Kim, S Y; Rossen, P B; Yu, P; Gajek, M; Chu, Y H; Martin, L W; Holcomb, M B; He, Q; Maksymovych, P; Balke, N; Kalinin, S V; Baddorf, A P; Basu, S R; Scullin, M L; Ramesh, R

2009-06-01

Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A 'dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of approximately 1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

NASA Astrophysics Data System (ADS)

Yang, C.-H.; Seidel, J.; Kim, S. Y.; Rossen, P. B.; Yu, P.; Gajek, M.; Chu, Y. H.; Martin, L. W.; Holcomb, M. B.; He, Q.; Maksymovych, P.; Balke, N.; Kalinin, S. V.; Baddorf, A. P.; Basu, S. R.; Scullin, M. L.; Ramesh, R.

2009-06-01

Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A `dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of ~1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

Structural determination of Bi-doped magnetite multifunctional nanoparticles for contrast imaging.

PubMed

Laguna-Marco, M A; Piquer, C; Roca, A G; Boada, R; Andrés-Vergés, M; Veintemillas-Verdaguer, S; Serna, C J; Iadecola, A; Chaboy, J

2014-09-14

To determine with precision how Bi atoms are distributed in Bi-doped iron oxide nanoparticles their structural characterization has been carried out by X-ray absorption spectroscopy (XAS) recorded at the K edge of Fe and at the L3 edge of Bi. The inorganic nanoparticles are nominally hybrid structures integrating an iron oxide core and a bismuth oxide shell. Fe K-edge XAS indicates the formation of a structurally ordered, non-stoichiometric magnetite (Fe3-δO4) phase for all the nanoparticles. The XAS spectra show that, in the samples synthesized by precipitation in aqueous media and laser pyrolysis, the Bi atoms neither enter into the iron oxide spinel lattice nor form any other mixed Bi-Fe oxides. No modification of the local structure around the Fe atoms induced by the Bi atoms is observed at the Fe K edge. In addition, contrary to expectations, our results indicate that the Bi atoms do not form a well-defined Bi oxide structure. The XAS study at the Bi L3 edge indicates that the environment around Bi atoms is highly disordered and only a first oxygen coordination shell is observed. Indefinite [BiO6-x(OH)x] units (isolated or aggregated forming tiny amorphous clusters) bonded through hydroxyl bridges to the nanoparticle, rather than a well defined Bi2O3 shell, surround the nanoparticle. On the other hand, the XAS study indicates that, in the samples synthesized by thermal decomposition, the Bi atoms are embedded in a longer range ordered structure showing the first and second neighbors.

Magnetic Cr doping of Bi2Se3: Evidence for divalent Cr from x-ray spectroscopy

NASA Astrophysics Data System (ADS)

Figueroa, A. I.; van der Laan, G.; Collins-McIntyre, L. J.; Zhang, S.-L.; Baker, A. A.; Harrison, S. E.; Schönherr, P.; Cibin, G.; Hesjedal, T.

2014-10-01

Ferromagnetically doped topological insulators with broken time-reversal symmetry are a prerequisite for observing the quantum anomalous Hall effect. Cr-doped (Bi,Sb)2(Se,Te)3 is the most successful materials system so far, as it combines ferromagnetic ordering with acceptable levels of additional bulk doping. Here, we report a study of the local electronic structure of Cr dopants in epitaxially grown Bi2Se3 thin films. Contrary to the established view that the Cr dopant is trivalent because it substitutionally replaces Bi3+, we find instead that Cr is divalent. This is evidenced by the energy positions of the Cr K and L2,3 absorption edges relative to reference samples. The extended x-ray absorption fine structure at the K edge shows that the Cr dopants substitute on octahedral sites with the surrounding Se ions contracted by Δd =-0.36 Å, in agreement with recent band structure calculations. Comparison of the Cr L2,3 x-ray magnetic circular dichroism at T =5 K with multiplet calculations gives a spin moment of 3.64 μB/Crbulk, which is close to the saturation moment for Cr2+ d4. The reduced Cr oxidation state in doped Bi2Se3 is ascribed to the formation of a covalent bond between Cr d (eg) and Se p orbitals, which is favored by the contraction of the Cr-Se distances.

Theoretical study of bismuth-doped cadmium telluride

NASA Astrophysics Data System (ADS)

Menendez-Proupin, E.; Rios-Gonzalez, J. A.; Pena, J. L.

Cadmium telluride heavily doped with bismuth has been proposed as an absorber with an intermediate band for solar cells. Increase in the photocurrent has been shown recently, although the overall cell efficiency has not improved. In this work, we study the electronic structure and the formation energies of the defects associated to bismuth impurities. We have performed electronic structure calculations within generalized density functional theory, using the exchange-correlation functional HSE(w) , where the range-separation parameter w has been tuned to reproduce the CdTe bandgap. Improving upon previous reports, we have included the spin-orbit interaction, which modifies the structure of the valence band and the energy levels of bismuth. We have found that interstitial Bi (Bii) tends to occupy Cd vacancies, cadmium substitution (BiCd) creates single donor level, while tellurium substitution (BiTe) is a shallow single acceptor. We investigate the interaction between these point defects and how can they be combined to create a partially filled intermediate band. Supported by FONDECYT Grant 1130437, CONACYT-SENER SUSTENTABILIDAD ENERGETICA/project CeMIE-Sol PY-207450/25 and PY-207450/26. JARG acknowledges CONACYT fellowship for research visit. Powered@NLHPC (ECM-02).

Thermoelectric properties of Te doped bulk Bi2Se3 system

NASA Astrophysics Data System (ADS)

Adam, A. M.; Elshafaie, A.; Mohamed, Abd El-Moez A.; Petkov, P.; Ibrahim, E. M. M.

2018-03-01

Polycrystalline bulk samples of Bi2(Se1‑xTex)3 system with x = 0.0–0.9 were prepared by the conventional melting method. Successfully and cheaply, Se atoms were replaced by Te atoms to get Bi2Se3-Bi2Te3 or even Bi2Te3 alone. Difference of mass and size between Te and Se atoms is expected to result in interesting properties in the Bi2(Se1‑xTex)3 system. All compounds showed a metal-semiconductor conductivity transition. The electrical conduction in the pristine Bi2Se3 compound increases with the low Te doping ratio (x = 0.3) then decreases monotonically for further amounts of Te. The Seebeck coefficient of Bi2Se3 compound is positive showing up a p-type conduction. However, introducing Te content increases the n-type conduction with a decrease in the Seebeck coefficient absolute value. In addition, Bi2Se3 compound is found to exhibit relatively high room temperature power factor and figure of merit values of 2.13 μW/m.k2. In an attempt to determine the figure of merit ZT, Bi2Se3 seems to be the best for room temperature, whereas, Te addition at high values makes the system just suitable for high temperature application.

An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb 0.25Bi 2Se 3

DOE PAGES

Smylie, M. P.; Willa, K.; Ryan, K.; ...

2017-10-26

Here, we report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb 0.25Bi 2Se 3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues Cu xBi 2Se 3 and Sr xBi 2Se 3 where smooth suppression of T c is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi 2Se 3 family are believed to be single-band.

The influence of Pb and Ag doping on the Jc(H,T) dependence and the mechanical properties of Bi-2212 textured rods

NASA Astrophysics Data System (ADS)

Sotelo, A.; Madre, M. A.; Diez, J. C.; Rasekh, Sh; Angurel, L. A.; Martínez, E.

2009-03-01

Textured rods of Bi-2212 based materials with nominal compositions Bi2Sr2CaCu2O8+δ, Bi2Sr2CaCu2O8+δ+1 wt% Ag, Bi1.6Pb0.4Sr2CaCu2O8+δ, and Bi1.6Pb0.4Sr2CaCu2O8+δ+3 wt% Ag were fabricated using a laser floating zone (LFZ) melting method. The electrical, magnetic, and mechanical properties of the resulting rods after annealing were characterized. Pb doping results in the decrease of the transport critical current density, Jc,t (from 4.4 × 107 to 6 × 106 A m-2 at 65 K and self-field) as well as in the worsening of the mechanical properties, by about 35% compared to the undoped samples. In contrast, Ag doping results in the improvement of both the critical current density and mechanical strength. In this regard we have observed an increase of Jc,t (65 K) from 4.4 × 107 for Bi-2212 to 7.2 × 107 A m-2 for Bi-2212/Ag and from 6 × 106 for Bi(Pb)-2212 to 8 × 106 A m-2 for Bi(Pb)-2212/Ag. These described effects are related to the microstructural observations, since Pb doping dramatically reduces the texture while Ag doping improves it. Moreover, for samples with Ag addition, an intergrowth of Bi-2223 inside the Bi-2212 grains is observed, which would explain the improved superconducting properties of these samples.

Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe) 5(Bi 2Se 3) 3

DOE PAGES

Ren, Xiaochen; Singh, Arunima K.; Fang, Lei; ...

2016-09-07

Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the totnographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom, probe tomography (APT). Also, APT analysis shows that Ag dopes both Bi 2Se 3 and PbSe layers in (PbSe) 5(Bi 2Se 3) 3, and correlations :in the position of Ag atoms suggest a pairing across neighboring Bi 2Se 3 and PbSe layers. Finally, density functional theory (DFT)more » calculations confirm the favorability of substitutional-doping for both Pb and Bi and provide insights into the,observed spatial correlations in dopant locations.« less

Yb-doped passively mode-locked fiber laser with Bi2Te3-deposited

NASA Astrophysics Data System (ADS)

Li, Lu; Yan, Pei-Guang; Wang, Yong-Gang; Duan, Li-Na; Sun, Hang; Si, Jin-Hai

2015-12-01

In this study we present an all-normal-dispersion Yb-doped fiber laser passively mode-locked with topological insulator (Bi2Te3) saturable absorber. The saturable absorber device is fabricated by depositing Bi2Te3 on a tapered fiber through using pulsed laser deposition (PLD) technology, which can give rise to less non-saturable losses than most of the solution processing methods. Owing to the long interaction length, Bi2Te3 is not exposed to high optical power, which allows the saturable absorber device to work in a high power regime. The modulation depth of this kind of saturable absorber is measured to be 10%. By combining the saturable absorber device with Yb-doped fiber laser, a mode-locked pulse operating at a repetition rate of 19.8 MHz is achieved. The 3-dB spectral width and pulse duration are measured to be 1.245 nm and 317 ps, respectively. Project supported by the National Natural Science Foundation of China (Grant No. 61378024) and the Natural Science Fund of Guangdong Province, China (Grant No. S2013010012235).

Significant enhancement in photocatalytic performance of Ni doped BiFeO3 nanoparticles

NASA Astrophysics Data System (ADS)

Nadeem, M.; Khan, Wasi; Khan, Shakeel; Shoeb, Mohd; Husain, Shahid; Mobin, Mohammad

2018-06-01

In the present work, we have investigated the effect of Ni doping on the microstructure and photocatalytic properties of BiFeO3 samples. All the compositions of BiFe1‑xNixO3 (0 ≤ x ≤ 0.07) have been synthesized via cost effective ethylene glycol based sol-gel method. The Rietveld refinement of the XRD data revealed rhombohedral crystal structure with R3c space group. The FTIR spectroscopy confirms the formation of BiFeO3 compound. UV–visible DRS result affirmed that the band gap of the samples can be tuned towards visible range by the Ni substitution. The photoluminescence spectra indicate lower intensity with the Ni content, signify reduction in recombination rate of the electron-hole pairs. The photocatalytic response of the nanoparticles was examined for the degradation of methylene blue (MB) dye under visible light irradiation and the highest photocatalytic response was observed for 7% Ni doped sample. Therefore, the observed results suggest potential application of the synthesized nanoparticles for wastewater treatment purpose.

Enhanced thermoelectric properties in Bi and Te doped p-type Cu3SbSe4 compound

NASA Astrophysics Data System (ADS)

Kumar, Aparabal; Dhama, P.; Banerji, P.

2018-04-01

We report the effect of Bi and Te doping on the electrical transport and thermoelectric properties of Cu3SbSe4 with an aim to maximize the power factor and/or minimize the thermal conductivity. A series of Cu3Sb1-xBixSe4-yTey (x = 0, 0.02, 0.04, 0.06, 0.08; y = 0.01) samples were prepared by melt growth technique and ball milling followed by spark plasma sintering. The structural analysis and microstructures were carried out by X-ray diffraction, transmission electron microscopy and Field emission scanning electron microscopy. Electrical resistivity is found to decrease with increase in doping contents, which is due to increase in carrier concentration and formation of acceptor level inside the energy gap. Reduction in thermal conductivity with increase in Bi content is attributed to scattering of phonons through grain boundaries and mass fluctuation. Maximum figure of merit (ZT ˜ 0.76) was achieved in the Cu3Sb0.98Bi0.02Se3.99Te0.01 sample at 650 K, which is approximately twice of the Cu3SbSe4. The results reveal that the Bi and Te doped Cu3SbSe4 leads to remarkable improvement in its thermoelectric properties.

Microscopic effects of Dy doping in the topological insulator Bi2Te3

NASA Astrophysics Data System (ADS)

Duffy, L. B.; Steinke, N.-J.; Krieger, J. A.; Figueroa, A. I.; Kummer, K.; Lancaster, T.; Giblin, S. R.; Pratt, F. L.; Blundell, S. J.; Prokscha, T.; Suter, A.; Langridge, S.; Strocov, V. N.; Salman, Z.; van der Laan, G.; Hesjedal, T.

2018-05-01

Magnetic doping with transition metal ions is the most widely used approach to break time-reversal symmetry in a topological insulator (TI)—a prerequisite for unlocking the TI's exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare-earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy-doped Bi2Te3 remained elusive. Here, we present an x-ray magnetic circular dichroism, polarized neutron reflectometry, muon-spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous, magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition-metal-doped layers. However, the introduction of some charge carriers by the Dy dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition-metal-doped topological insulators, and Dy doping should thus allow for improved TI quantum devices.

Physical and Optical Studies of Bi3+-Modified Erbium Doped Tellurite Glasses

NASA Astrophysics Data System (ADS)

Marzuki, Ahmad; Ega Fausta, Devara

2018-03-01

Er3+-doped tellurite glasses with various compositions (in mole%): 54TeO2-(41-x)ZnO-xBi2O3-2Na2O-3Er2O3 (x = 1, 2, 3, 4, and 5) were prepared with melt quenching method. Studies was aimed at investigating the effect of Bi3+ ion content on the physical and optical properties of the glasses. The density, refractive index, optical absorption, and optical energy band gap measurements were carried out at room temperature using pycnometer, Brewster angle method, and UV-VIS-NIR spectrophotometer, respectively. From the experiment, it was shown that the density and refractive index of the glasses increased with the increase of Bi3+ ions concentration. The absorption band intensity of electronic transition from 4I15/2 to 4H11/2 exhibited an increase as the Bi3+ ions concentration increase suggesting that incorporating Bi3+ ions into this glasses might improve the pumping efficiency.

Preparation and characterization of Bi-doped TiO{sub 2} and its solar photocatalytic activity for the degradation of isoproturon herbicide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, Police Anil Kumar; Srinivas, Basavaraju; Kala, Pruthu

Highlights: {yields} Visible active Bi-TiO{sub 2} photocatalyst preparation and thorough charaterization. {yields} Bi-TiO{sub 2} shows high activity for isoproturon degradation under solar light irradiation. {yields} The spectral response of TiO{sub 2} shifts from UV to visible light region by Bi doping. {yields} Bi{sup 3+{delta}+} species are playing a vital role in minimizing e{sup -}/h{sup +} recombination. -- Abstract: Bi-doped TiO{sub 2} catalyst was prepared by sol-gel method and was characterized by thermo gravimetric analysis (TGA), X-ray diffraction spectra (XRD), X-ray photo electronic spectroscopy (XPS), UV-Vis diffused reflectance spectra (DRS), photoluminescence spectra (PLS), transmission electron microscopy (TEM), energy dispersive analysis ofmore » X-rays (EDAX) and BET surface area. The photocatalytic activity of the catalysts were evaluated for the degradation of isoproturon herbicide under solar light irradiation. The UV-Visible DRS of Bi-doped TiO{sub 2} showed red shift in optical absorption. The presence of Bi{sup 3+{delta}+} species are playing a vital role in minimizing the electron hole recombination resulting higher activity compared to bare TiO{sub 2}.« less

Some aspects of the thermodynamic behaviour of the lead-doped Bi-2223 system

NASA Astrophysics Data System (ADS)

Tetenbaum, M.; Maroni, V. A.

1996-02-01

A thermodynamic assessment of lead-doped Bi-2223 with emphasis on compositions and oxygen partial pressures within the homogeneity region prior to solid-state decomposition is presented. Equations for the variation of oxygen partial pressure with composition and temperature have been derived from our EMF measurements. Long-term metastability was indicated during cycling over a temperature range of ∼ 700-815°C of a lead-doped Bi-2223 sample having an oxygen-deficient stoichiometry of 9.64 prior to solid-state decomposition corresponding to the diphasic CuOCu 2O system. A trend of increasing negative values of the partial molar enthalpy Δ overlineH( O 2) and entropy Δ overlineS( O2 with increasing oxygen deficiency of the condensed phase indicated an increase in ordering of the cuprate structure prior to solid-state decomposition.

Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

DOE PAGES

Burst, James M.; Farrell, Stuart B.; Albin, David S.; ...

2016-11-01

CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 10 16 cm -3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 10 16 cm -3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl 2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability canmore » help overcome historic barriers for CdTe solar cell development.« less

Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burst, James M.; Farrell, Stuart B.; Albin, David S.

CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 10 16 cm -3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 10 16 cm -3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl 2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability canmore » help overcome historic barriers for CdTe solar cell development.« less

Hydrothermal fabrication of N-doped (BiO)2CO3: Structural and morphological influence on the visible light photocatalytic activity

NASA Astrophysics Data System (ADS)

Dong, Fan; Wang, Rui; Li, Xinwei; Ho, Wing-Kei

2014-11-01

Various 3D N-doped (BiO)2CO3 (N-BOC) hierarchical superstructures self-assembled with 2D nanosheets were fabricated by one-step hydrothermal treatment of bismuth citrate and urea. The as-obtained samples were characterized by XRD, XPS, FT-IR, SEM, N2 adsorption-desorption isotherms and UV-vis DRS. The hydrothermal temperature plays a crucial role in tuning the crystal and morphological structure of the samples. Adjusting the reaction temperature to 150, 180 and 210 °C, we obtained N-doped (BiO)2CO3 samples with corresponding attractive persimmon-like, flower-like and nanoflakes nano/microstructures. The photocatalytic activities of the samples were evaluated by removal of NO under visible and solar light irradiation. The results revealed that the N-doped (BiO)2CO3 hierarchical superstructures showed enhanced visible light photocatalytic activity compared to pure (BiO)2CO3 and TiO2-based visible light photocatalysts. The outstanding photocatalytic performance of N-BOC samples can be ascribed to the doped nitrogen and the special hierarchical structure. The present work could provide new perspectives in controlling the morphological structure and photocatalytic activity of photocatalyst for better environmental pollution control.

RVB states in doped band insulators from Coulomb forces: theory and a case study of superconductivity in BiS2 layers

NASA Astrophysics Data System (ADS)

Baskaran, G.

2016-12-01

Doped band insulators, HfNCl, WO3, diamond, Bi2Se3, BiS2 families, STO/LAO interface, gate doped SrTiO3, MoS2 and so on are unusual superconductors. With an aim to build a general theory for superconductivity in doped band insulators, we focus on the BiS2 family which was discovered by Mizuguchi et al in 2012. While maximum Tc is only ˜11 K in {{LaO}}1-{{x}}{{{F}}}{{x}}{{BiS}}2, a number of experimental results are puzzling and anomalous in the sense that they resemble high T c and unconventional superconductors. Using a two orbital model of Usui, Suzuki and Kuroki, we show that the uniform low density free Fermi sea in {{LaO}}{0,5}{{{F}}}0.5{{BiS}}2 is unstable towards formation of the next nearest neighbor Bi-S-Bi diagonal valence bond (charged -2e Cooper pair) and their Wigner crystallization. Instability to this novel state of matter is caused by unscreened nearest neighbor coulomb repulsions (V ˜ 1 eV) and a hopping pattern with sulfur mediated diagonal next nearest neighbor Bi-S-Bi hopping t’ ˜ 0.88 eV, as well as larger than nearest neighbor Bi-Bi hopping, t ˜ 0.16 eV. Wigner crystals of Cooper pairs quantum melt for doping around x = 0.5 and stabilize certain resonating valence bond states and superconductivity. We study a few variational RVB states and suggest that BiS2 family members are latent high Tc superconductors, but challenged by competing orders and the fragile nature of many body states sustained by unscreened Coulomb forces. One of our superconducting states has d XY symmetry and a gap. We also predict a 2d Bose metal or vortex liquid normal state, as charged -2e valence bonds survive in the normal state.

Sb- and Bi-doped Mg2Si: location of the dopants, micro- and nanostructures, electronic structures and thermoelectric properties.

PubMed

Farahi, Nader; VanZant, Mathew; Zhao, Jianbao; Tse, John S; Prabhudev, Sagar; Botton, Gianluigi A; Salvador, James R; Borondics, Ferenc; Liu, Zhenxian; Kleinke, Holger

2014-10-28

Due to increasing global energy concerns, alternative sustainable methods to create energy such as thermoelectric energy conversion have become increasingly important. Originally, research into thermoelectric materials was focused on tellurides of bismuth and lead because of the exemplary thermoelectric properties of Bi2Te3 and PbTe. These materials, however, contain toxic lead and tellurium, which is also scarce and thus expensive. A viable alternative material may exist in Mg2Si, which needs to be doped and alloyed in order to achieve reasonable thermoelectric efficiency. Doping is a major problem, as p-type doping has thus far not produced competitive efficiencies, and n-type doping is problematic because of the low solubility of the typical dopants Sb and Bi. This investigation shows experimentally that these dopants can indeed replace Si in the crystal lattice, and excess Sb and Bi atoms are present in the grain boundaries in the form of Mg3Sb2 and Mg3Bi2. As a consequence, the carrier concentration is lower than the formal Sb/Bi concentration suggests, and the thermal conductivity is significantly reduced. DFT calculations are in good agreement with the experimental data, including the band gap and the Seebeck coefficient. Overall, this results in competitive efficiencies despite the low carrier concentration. While ball-milling was previously shown to enhance the solubility of the dopants and thus the carrier concentration, this did not lead to enhanced thermoelectric properties.

Photoelectrochemical performance of W-doped BiVO4 thin films deposited by spray pyrolysis

NASA Astrophysics Data System (ADS)

Holland, S. Keith; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

2014-01-01

The effects of tungsten doping and hydrogen annealing on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting were studied. Thin films of BiVO were deposited on indium tin oxide-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) to the precursor. The 1.7- to 2.2-μm-thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375°C in 3% H exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination, where photocurrent densities of up to 1.3 mA cm-2 at 0.5 V with respect to Ag/AgCl were achieved. Films doped with 1% or 5% (atomic percent) tungsten from either STA or AMT exhibited reduced PEC performance and greater sample-to-sample performance variations. Powder x-ray diffraction data indicated that the films continue to crystallize in the monoclinic polymorph at low doping levels but crystallize in the tetragonal scheelite structure at higher doping. It is surmised that the phase and morphology differences promoted by the addition of W during the deposition process reduced the PEC performance as measured by photovoltammetry.

Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

NASA Astrophysics Data System (ADS)

Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

2016-02-01

Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

Synthesis of cobalt doped BiFeO3 multiferroic thin films on p-Si substrate by sol-gel method

NASA Astrophysics Data System (ADS)

Prasannakumara, R.; Shrisha, B. V.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and cobalt doped BiFeO3 (BiFe1-xCoxO3) nanostructure thin films were grown on p-silicon substrates by sol-gel spin coating method with a sequence of coating and annealing process. The post-annealing of the grown films was carried out under high pure argon atmosphere. The grown nanostructure thin films were characterized using XRD, FESEM, and AFM for the structural, morphological and topological studies, respectively. The elemental compositions of the samples were studied by EDX spectra. The PL spectra of the grown sample shows a narrow emission peak around 559 nm which corresponds to the energy band gap of BFO thin films. The XRD peaks of the BiFeO3 nanostructure thin film reveals the rhombohedral structure and transformed from rhombohedral to orthorhombic or tetragonal structure in Co doped BiFeO3 thin films. The Co substitution in BiFeO3 helped to obtain higher dense nanostructure thin films with smaller grain size than the BiFeO3 thin films.

Accuracy and Transferability of Ab Initio Electronic Band Structure Calculations for Doped BiFeO3

NASA Astrophysics Data System (ADS)

Gebhardt, Julian; Rappe, Andrew M.

2017-11-01

BiFeO3 is a multiferroic material and, therefore, highly interesting with respect to future oxide electronics. In order to realize such devices, pn junctions need to be fabricated, which are currently impeded by the lack of successful p-type doping in this material. In order to guide the numerous research efforts in this field, we recently finished a comprehensive computational study, investigating the influence of many dopants onto the electronic structure of BiFeO3. In order to allow for this large scale ab initio study, the computational setup had to be accurate and efficient. Here we discuss the details of this assessment, showing that standard density-functional theory (DFT) yields good structural properties. The obtained electronic structure, however, suffers from well-known shortcomings. By comparing the conventional DFT results for alkali and alkaline-earth metal doping with more accurate hybrid-DFT calculations, we show that, in this case, the problems of standard DFT go beyond a simple systematic error. Conventional DFT shows bad transferability and the more reliable hybrid-DFT has to be chosen for a qualitatively correct prediction of doping induced changes in the electronic structure of BiFeO3.

Improving of the electrical and magnetic properties of BiFeO{sub 3} by doping with yttrium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ilić, Nikola I., E-mail: niksentije@gmail.com; Bobić, Jelena D.; Stojadinović, Bojan S.

2016-05-15

Bismuth ferrite is one of the most promising multiferroic materials, and the main barriers for exploiting all of its specific properties are difficulties in obtaining pure, high resistive material with nanosized grains. Doping of BiFeO{sub 3} with different transition metals and rare earth elements is often used way for overcoming these obstacles. Yttrium doped bismuth ferrite, Bi{sub 1−x}Y{sub x}FeO{sub 3} (x = 0; 0.01; 0.03; 0.05; 0.1), was prepared by auto-combustion method. X-ray diffraction patterns and Raman results showed that partial phase transition from rhombohedral to orthorhombic structure took place at around 10 mol% of Y. Effect of Y dopingmore » on microstructure was studied from SEM micrographies, showing the reduction of grain size in doped samples. Electrical measurements showed continuous improvement of resistivity with Y doping, whereas the values of saturation and remnant polarizations exhibit maximums at around 5 mol% of Y. Yttrium doping also enhanced magnetic properties, leading to weak ferromagnetism.« less

Tunable magnetism of 3d transition metal doped BiFeO3

NASA Astrophysics Data System (ADS)

Lu, S.; Li, C.; Zhao, Y. F.; Gong, Y. Y.; Niu, L. Y.; Liu, X. J.; Wang, T.

2017-10-01

Electronic polarization or bond relaxation can effectively alter the electronic and magnetic behavior of materials by doping impurity atom. For this aim, the thermodynamic, electronic and magnetic performances of cubic BiFeO3 have been modulated by the 3d transition metal (TM) dopants (Sc, Ti, V, Cr, Mn, Co, Ni, Cu and Zn) based on the density functional theory. Results show that the doped specimen with low impurity concentration is more stable than that with high impurity concentration. The Mulliken charge values and spin magnetic moments of TM element are making major changes, while those of all host atoms are making any major changes. Especially, it is the linear relation between the spin magnetic moments of TM dopants and the total magnetic moment of doped specimens; thus, the variations of total magnetic moment of doped specimens are decided by the spin magnetic moments of TM dopants, thought the total magnetic moments of doped specimens mainly come from Fe atom and TM dopants. Besides, as double TM atoms substitution the Fe atoms, the Sc-, Ti-, Mn-, Co- and Zn-doped specimens show AFM state, while the V-, Cr-, Ni- and Cu-doped specimens show FM state.

Oxygen stoichiometry, phase stability, and thermodynamic behavior of the lead-doped and lead-free Bi-2212 systems

NASA Astrophysics Data System (ADS)

Tetenbaum, M.; Hash, M.; Tani, B. S.; Maroni, V. A.

1996-02-01

Electromotive-force (EMF) measurements of oxygen fugacities as a function of stoichiometry have been made on lead-doped and lead-free Bi 2- zPb zSr 2Ca 1Cu 2O x superconducting ceramics in the temperature range ≈ 700-815°C by means of an oxygen-titration techique that employs an yttria-stabilized zirconia electrolyte. Equations for the variation of oxygen partial pressure with composition and temperature have been derived from our EMF measurements. Thermodynamic assessments of the partial molar quantities Δ overlineH(O 2) and Δ overlineS(O 2) for lead-doped Bi-2212 and lead-free Bi-2212 indicate that the solid-state decomposition of these bismuth cuprates at low oxygen partial pressure can be represented by the diphasic CuOCu 2O system.

Enhanced thermoelectric performance realized in AgBiS2 composited AgBiSe2 through indium doping and mechanical alloying

NASA Astrophysics Data System (ADS)

Guan, Yingdong; Huang, Yi; Wu, Di; Feng, Dan; He, Mingkai; He, Jiaqing

2018-05-01

AgBiSe2 is deemed as a decent candidate of state-of-arts thermoelectric lead chalcogenides due to its intrinsically low lattice thermal conductivity. In this work, we report that a peak figure of merit of ˜0.9 can be realized at 773 K in n-type AgBiSe2 when it is simultaneously doped with indium and composited with AgBiS2 through the ball milling process. The enhancement of thermoelectric performance of AgBiSe2 largely comes from the significant reduction of thermal conductivity from ˜0.5 W/mK to 0.33 W/mK at 773 K, which is the record low value ever reported in this specific system. The decrease in thermal conductivity can be ascribed to the combination of grain size reduction and enhanced alloy scattering from S-Se substitution during the high energy ball milling processes.

Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

NASA Astrophysics Data System (ADS)

Wijewarnasuriya, Priyalal S.

2016-05-01

Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

Enhancing visible light photocatalytic and photocharge separation of (BiO){sub 2}CO{sub 3} plate via dramatic I{sup −} ions doping effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Lei; Cao, Jing; Anhui Collaborative Innovation Center of Advanced Functional Composite, Huaibei, 235000, Anhui

Highlights: • Novel I-(BiO){sub 2}CO{sub 3} was prepared by a facile chemical precipitation method. • I{sup −} ions impurity level located on the top of valence band of (BiO){sub 2}CO{sub 3}. • I{sup −} ions doping largely improved photocatalytic activity of I-(BiO){sub 2}CO{sub 3}. • I-(BiO){sub 2}CO{sub 3} displayed excellent photocharge separation efficiency. - Abstract: Novel I{sup −} ions doped (BiO){sub 2}CO{sub 3} (I-(BiO){sub 2}CO{sub 3}) photocatalysts were successfully synthesized via a facile chemical precipitation method. Under visible light (λ > 400 nm), I-(BiO){sub 2}CO{sub 3} displayed much higher activity for rhodamine B and dichlorophenol degradation than the undoped (BiO){submore » 2}CO{sub 3}. The pseudo-first-order rate constant k{sub app} of RhB degradation over 15.0% I-(BiO){sub 2}CO{sub 3} was 0.54 h{sup −1}, which is 11.3 times higher than that of (BiO){sub 2}CO{sub 3}. The doped I{sup −} ions formed an impurity level on the top of valence band of (BiO){sub 2}CO{sub 3} and induced much more visible light to be absorbed. The enhanced photocurrent and surface photovoltage properties were detected, which strongly ensures the efficient separation of electrons and holes in I-(BiO){sub 2}CO{sub 3} system under visible light. It provides a facile way to improve the photocatalytic activity of the wide-band-gap (BiO){sub 2}CO{sub 3} via intense doping effect of I{sup −} ions.« less

Growth of Nucleation Sites on Pd-doped Bi_2Sr_2Ca1 Cu_2O_8+δ

NASA Astrophysics Data System (ADS)

Kouzoudis, D.; Finnemore, D. K.; Xu, Ming; Balachandran

1996-03-01

Enviromental Scanning Electron Microscope has shown evidence that during the growth of Bi_2Sr_2Ca_2Cu_3O_10+δ from mixed powders of Pb-doped Bi_2Sr_2Ca_1Cu_2O_8+δ and other oxides, a dense array of hillocks or mesas grow at the interface between an Ag overlay and Pb doped Bi_2Sr_2Ca_1Cu_2O_8+δ grains. These hillocks develop a texture that looks like ''chicken pox'' during the ramp up to the reaction temperature starting at about 700^circ C and they are about 500 to 1000 nm across and are spaced at about 500 to 1000 nm. If there is no Ag, this texture does not develop. Preliminary measurments indicate that the hillocks are re-crystallization of (Bi,Pb)_2Sr_2Ca_1Cu_2O_8+δ and are definetely not a Pb rich phase

Growth of nucleation sites on Pb-doped Bi2Sr2Ca1Cu2O8 + delta

NASA Astrophysics Data System (ADS)

Finnemore, D. K.; Xu, Ming; Kouzoudis, D.; Bloomer, T.; Kramer, M. J.; McKernan, Stuart; Balachandran, U.; Haldar, Pradeep

1996-01-01

In the growth of Bi2Sr2Ca2Cu3O10+δ from mixed powders of Pb-doped Bi2Sr2Ca1Cu2O8+δ and other oxides, it has been discovered that a dense array of hillocks or mesas grow at the interface between a Ag overlay and Pb-doped Bi2Sr2Ca1Cu2O8+δ grains during the ramp up to the reaction temperature. As viewed in an environmental scanning electron microscope, the Ag coated grains develop a texture that looks like ``chicken pox'' growing on the grains at about 700 °C. These hillocks are about 100 nm across and are spaced at about 500 to 1000 nm. If there is no Ag, this texture does not develop. Preliminary measurements indicate that the hillocks are a recrystallization of (Bi,Pb)2Sr2Ca1Cu2O8+δ, and are definitely not a Pb rich phase.

Enhanced sunlight-driven photocatalytic performance of Bi-doped CdMoO4 benefited from efficient separation of photogenerated charge pairs

NASA Astrophysics Data System (ADS)

Huang, Jiao; Liu, Huanhuan; Zhong, Junbo; Yang, Qi; Chen, Jiufu; Li, Jianzhang; Ma, Dongmei; duan, Ran

2018-06-01

In this paper, to further boost the photocatalytic performance of CdMoO4, Bi3+ was successfully doped into CdMoO4 by a facile microwave hydrothermal method. The Bi-doped CdMoO4 photocatalysts prepared were characterized by Brunauer-Emmett-Teller (BET) method, X-ray diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), electron spin-resonance (ESR) and surface photovoltage spectroscopy (SPS). The results exhibit that doping Bi3+ into CdMoO4 remarkably boosts the separation rate of photoinduced charge pairs and the specific surface area, decrease the crystal size, narrows the band gap of the CdMoO4 and induces the binding energy shift of Cd, all these advantageous factors result in the promoted photocatalytic performance of CdMoO4. Using rhodamine B (RhB) as model toxic pollutant, the photocatalytic activities of the photocatalysts were evaluated under a 500 W Xe lamp irradiation. When the molar ratio of Bi/Cd is 0.2%, Bi-CdMoO4 prepared displays the best photocatalytic performance, the photocatalytic performance of the 0.2% sample is more than twice of that of the reference CdMoO4.

Graphene-doped Bi2S3 nanorods as visible-light photoelectrochemical aptasensing platform for sulfadimethoxine detection.

PubMed

Okoth, Otieno Kevin; Yan, Kai; Liu, Yong; Zhang, Jingdong

2016-12-15

Bismuth sulphide (Bi2S3) nanorods doped with graphene (G) were synthesized and explored as photoactive materials for constructing a photoelectrochemical (PEC) aptasensor for sulfadimethoxine (SDM) detection. The formation of Bi2S3 nanorods and G nanosheets was observed by scanning electron microscopy (SEM) and further characterized by X-ray diffraction (XRD) spectroscopy. The PEC measurements indicated that the photocurrent response of Bi2S3 was obviously improved by doping suitable amount of G. The G-Bi2S3 composite coated electrode was utilized for fabricating a PEC aptasensor by covalently immobilizing a 5'-amino-terminated SDM aptamer on the electrode surface. Based on the specific interaction between SDM and the aptamer, a PEC sensor responsive to SDM was obtained. Under optimal conditions, the proposed sensor showed a linear photocurrent response to SDM in the concentration range of 1.0-100nM, with a low detection limit (3S/N) of 0.55nM. Moreover, the sensor showed high sensitivity, stability and reproducibility. The potential applicability of the PEC aptasensor was confirmed by detecting SDM in veterinary drug formulation and milk. Copyright © 2016 Elsevier B.V. All rights reserved.

Density functional theory calculations establish the experimental evidence of the DX center atomic structure in CdTe.

PubMed

Lany, Stephan; Wolf, Herbert; Wichert, Thomas

2004-06-04

The In DX center and the DX-like configuration of the Cd host atom in CdTe are investigated using density functional theory. The simultaneous calculation of the atomic structure and the electric field gradient (EFG) allows one to correlate the theoretically predicted structure of the DX center with an experimental observable, namely, the EFG obtained from radioactive 111In/111Cd probe atoms in In doped CdTe. In this way, the experimental identification of the DX center structure is established.

A Highly Efficient UV-Vis-NIR Active Ln(3+)-Doped BiPO4/BiVO4 Nanocomposite for Photocatalysis Application.

PubMed

Ganguli, Sagar; Hazra, Chanchal; Chatti, Manjunath; Samanta, Tuhin; Mahalingam, Venkataramanan

2016-01-12

In this Article, we report the synthesis of Ln(3+) (Yb(3+), Tm(3+))-doped BiPO4/BiVO4 nanocomposite photocatalyst that shows efficient photocatalytic activity under UV-visible-near-infrared (UV-vis-NIR) illumination. Incorporation of upconverting Ln(3+) ion pairs in BiPO4 nanocrystals resulted in strong emission in the visible region upon excitation with a NIR laser (980 nm). A composite of BiPO4 nanocrystals and vanadate was prepared by the addition of vanadate source to BiPO4 nanocrystals. In the nanocomposite, the strong blue emission from Tm(3+) ions via upconversion is nonradiatively transferred to BiVO4, resulting in the production of excitons. This in turn generates reactive oxygen species and efficiently degrades methylene blue dye in aqueous medium. The nanocomposite also shows high photocatalytic activity both under the visible region (0.010 min(-1)) and under the full solar spectrum (0.047 min(-1)). The results suggest that the photocatalytic activity of the nanocomposite under both NIR as well as full solar irradiation is better compared to other reported nanocomposite photocatalysts. The choice of BiPO4 as the matrix for Ln(3+) ions has been discussed in detail, as it plays an important role in the superior NIR photocatalytic activity of the nanocomposite photocatalyst.

Lanthanide Contraction Effect In Magnetic Thermoelectric Materials Of Rare Earth-doped Bi1.5Pb0.5Ca2Co2O8

NASA Astrophysics Data System (ADS)

Sutjahja, Inge Magdalena; Akbar, Taufik; Nugroho, Agung

2010-12-01

We report in this paper the result of synthesis and crystal structure characterization of magnetic thermoelectric materials of rare-earth-doped Bi1.5Pb0.5Ca2Co2O8, namely Bi1.5Pb0.5Ca1.9RE0.1Co2O8 (RE = La, Pr, Sm, Eu, Gd, Ho). Single phase samples have been prepared by solid state reaction process using precursors of Bi2O3, PbO, CaCO3, RE2O3, and Co3O4. The precursors were pulverized, calcinated, and sintered in air at various temperatures for several hours. Analysis of XRD data shows that Bi1.5Pb0.5Ca1.9RE0.1Co2O8 compound is a layered system consisting of an alternate stack of CoO2 layer and Bi2Sr2O4 block along the c-axis. The misfit structure along b-direction is revealed from the difference of the b-axis length belonging to two sublattices, namely hexagonal CdI2-type CoO2 layer and rock-salt (RS) NaCl-type Bi2Sr2O4 block, while they possess the common a- and c-axis lattice parameters and β angles. The overall crystal structure parameters (a, b, and c) increases with type of doping from La to Ho, namely by decreasing the ionic radii of rare-earth ion. We discuss this phenomenon in terms of the lanthanide contraction, an effect commonly found in the rare-earth compound, results from poor shielding of nuclear charge by 4f electrons. In addition, the values of b-lattice parameters in these rare-earth doped samples are almost the same with those belongs to undoped parent compound (Bi1.5Pb0.5Sr2Co2O8) and its related Y-doped (Bi1.5Pb0.5Ca1.9Y0.1Co2O8) samples, while the c-values reduced significantly in rare-earth doped samples, with opposite trend with those of variation of a-axis length. Morevover, the misfit degree in rare-earth doped compound is higher in compared to parent compound and Y-doped samples. We argue that these structural changes induced by rare-earth doping may provide information for the variation of electronic structure of Co-ions (Co3+ and Co4+), in particular their different spin states of low-spin, intermediate-spin, and high-spin. This, in

Preparation and Characterization of Nanosized Bi-Doped SnO₂/Reduced Graphene Oxide 3D Hybrids for Visible-Light-Driven Photocatalysis.

PubMed

Wu, Xiang-Feng; Zhang, Chen-Xu; Sun, Yang; Fu, Shi-Da; Li, Hui; Wang, Yi-Jin; Zhang, Jia-Rui; Su, Jun-Zhang; Wang, Yi-Wei; Wang, Kai-Yuan

2018-07-01

The nanosized Bi-doped SnO2/reduced graphene oxide 3D hybrids have been synthesized via one-step hydrothermal method. The structures, morphologies, photocatalytic activities of the as-prepared samples were discussed, respectively. The formation mechanism of the as-prepared hybrids was also proposed. Experimental results indicated that the usage amount of Bi2Sn2O7 obviously affected the photocatalytic performance of the as-prepared products. When it was 450 mg, the as-prepared sample possessed the band gap energy of 1.9 eV and the photocatalytic efficiency of 90% in 210 min for degradation of rhodamine B solution. In addition, triethylene tetramine and the as-prepared carbon hydrogel could act as reductant to synergistically reduce Bi2Sn2O7 into Bi-doped SnO2 particles during the formation of the hybrids.

Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

NASA Astrophysics Data System (ADS)

Moore, Andrew

Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

Synthesis of carbon-doped nanosheets m-BiVO4 with three-dimensional (3D) hierarchical structure by one-step hydrothermal method and evaluation of their high visible-light photocatalytic property

NASA Astrophysics Data System (ADS)

Zhao, Deqiang; Zong, Wenjuan; Fan, Zihong; Fang, Yue-Wen; Xiong, Shimin; Du, Mao; Wu, Tianhui; Ji, Fangying; Xu, Xuan

2017-04-01

To achieve an efficient visible-light absorption and degradation of bismuth vanadate (BiVO4), in this paper, a carbon-doped (C-doped) nanosheets monoclinic BiVO4 (m-BiVO4), with thicknesses within 19.86 ± 8.48 nm, was synthesized using polyvinylpyrrolidone K-30 (PVP) as a template and l-carbonic as the carbon source by one-step hydrothermal synthesis method. This C-doped BiVO4 in three-dimensional (3D) hierarchical structure enjoys high visible-light photocatalytic property. The samples were characterized using x-ray diffraction, scanning electron microscope, Raman spectra, energy dispersive spectrometer, transmission electron microscope, x-ray photoelectron spectroscopy, UV-Vis diffused reflectance spectroscopy, specific surface area, electron spin resonance, and transient photocurrent response, photoluminescence spectra, and incident-photon-to-current conversion efficiency, respectively. What is more, we studied the C-doping effect on the band-gap energy of BiVO4 based on First-principles. X-ray diffraction analysis showed that all photocatalysts were in the same single monoclinic scheelite structure. According to the other characterization results, the element C was successfully doped in BiVO4, resulting in the 3D hierarchical structure of C-doped BiVO4 (P-L-BiVO4). We speculated that it could be the directional coalescence mechanism by which the l-cysteine promoted the two-dimensional growth and C-doping process of BiVO4, thus leading to the formation of nanosheets which were then promoted into 3D self-assembly by PVP and the shortening of the band gap. Among all samples, P-L-BiVO4 can make the highest removal ratio of rhodamine B under visible-light irradiation. The stability of P-L-BiVO4 was verified by recycle experiments. It showed that P-L-BiVO4 had strong visible-light absorption behavior and high electron-hole separation efficiency and stability, making a significant advantage in actual situation.

Effects of K-Doping on Thermoelectric Properties of Bi1- x K x CuOTe

NASA Astrophysics Data System (ADS)

An, Tae-Ho; Lim, Young Soo; Seo, Won-Seon; Park, Cheol-Hee; Yoo, Mi Duk; Park, Chan; Lee, Chang Hoon; Shim, Ji Hoon

2017-05-01

The effects of K-doping on the thermoelectric properties of Bi1- x K x CuOTe ( x = 0 to 0.08) have been investigated. The compounds were synthesized by a one-step solid-state reaction method and consolidated by a spark plasma sintering process. As the amount of K-doping was increased, the electrical and thermal conductivities increased while the Seebeck coefficient decreased due to increasing hole concentration. A ZT value of 0.69 was obtained for the compound K0.01Bi0.99CuOTe at 700 K, to the best of our knowledge the highest value reported for this material system. The origin of this enhanced ZT is discussed in terms of the density of states effective mass estimated by a single parabolic band model and electronic structures calculated based on density functional theory.

Time delay and excitation mode induced tunable red/near-infrared to green emission ratio of Er doped BiOCl

NASA Astrophysics Data System (ADS)

Avram, Daniel; Florea, Mihaela; Tiseanu, Ion; Tiseanu, Carmen

2015-09-01

Herein, we report on the emission color tunability of Er doped BiOCl measured under up—conversion as well as x-ray excitation modes. The dependence of red (670 nm) to green emission (543 nm) ratio on Er concentration (1 and 5%), excitation wavelength into different (656.4, 802 and 976 nm) or across single Er absorption levels (965 ÷ 990 nm) and delay after the laser pulse (0.001 ÷ 1 ms) is discussed in terms of ground state absorption/excited state absorption and energy transfer up-conversion mechanisms. A first example of extended Er x-ray emission measured in the range of 500 to 1700 nm shows comparable emission intensities corresponding to 543 nm and 1500 nm based transitions. The present results together with our earlier report on the upconversion emission of Er doped BiOCl excited at 1500 nm, suggest that Er doped BiOCl may be considered an attractive system for optical and x-ray imaging applications.

Electrodeposition of CdTe thin film from acetate-based ionic liquid bath

NASA Astrophysics Data System (ADS)

Waldiya, Manmohansingh; Bhagat, Dharini; Mukhopadhyay, Indrajit

2018-05-01

CdTe being a direct band gap semiconductor, is mostly used in photovoltaics. Here we present, the synthesis of CdTe thin film on fluorine doped tin oxide (FTO) substrate potentiostatically using 1-butyl-3-methylimidazolium acetate ([Bmim][Ac]) ionic liquid (IL) bath at 90 °C. Major advantages of using electrodeposition involves process simplicity, large scalability & economic viability. Some of the benefits offered by IL electrolytic bath are low vapour pressure, wide electrochemical window, and good ionic mobility. Cd(CH3COO)2 (anhydrous) and TeO2 were used as the source precursors. The IL electrolytic bath temperature was kept at 90 °C for deposition, owing to the limited solubility of TeO2 in [Bmim][Ac] IL at room temperature. Cathodic electrodeposition was carried out using a three electrode cell setup at a constant potential of -1.20 V vs. platinum (Pt) wire. The CdTe/FTO thin film were annealed in argon (Ar) atmosphere. Optical study of nanostructured CdTe film were done using UV-Vis-IR and Raman spectroscopy. Raman analysis confirms the formation of CdTe having surface optics (SO) mode at 160.6 cm-1 and transverse optics (TO) mode at 140.5 cm-1. Elemental Te peaks at 123, 140.5 and 268 cm-1 were also observed. The optical band gap of Ar annealed CdTe thin film were found to be 1.47 eV (absorbance band edge ˜ 846 nm). The optimization of deposition parameters using acetate-based IL electrolytic bath to get nearly stoichiometric CdTe thin film is currently being explored.

CdTe layer structures for X-ray and gamma-ray detection directly grown on the Medipix readout-chip by MBE

NASA Astrophysics Data System (ADS)

Vogt, A.; Schütt, S.; Frei, K.; Fiederle, M.

2017-11-01

This work investigates the potential of CdTe semiconducting layers used for radiation detection directly deposited on the Medipix readout-chip by MBE. Due to the high Z-number of CdTe and the low electron-hole pair creation energy a thin layer suffices for satisfying photon absorption. The deposition takes place in a modified MBE system enabling growth rates up to 10 μm/h while the UHV conditions allow the required high purity for detector applications. CdTe sensor layers deposited on silicon substrates show resistivities up to 5.8 × 108 Ω cm and a preferred (1 1 1) orientation. However, the resistivity increases with higher growth temperature and the orientation gets more random. Additionally, the deposition of a back contact layer sequence in one process simplifies the complex production of an efficient contact on CdTe with aligned work functions. UPS measurements verify a decrease of the work function of 0.62 eV induced by Te doping of the CdTe.

Evidence of chemical-potential shift with hole doping in Bi2Sr2CaCu2O8+δ

NASA Astrophysics Data System (ADS)

Shen, Z.-X.; Dessau, D. S.; Wells, B. O.; Olson, C. G.; Mitzi, D. B.; Lombado, Lou; List, R. S.; Arko, A. J.

1991-12-01

We have performed photoemission studies on high-quality Bi2Sr2CaCu2O8+δ samples with various δ. Our results show a clear chemical-potential shift (0.15-0.2 eV) as a function of doping. This result and the existing angle-resolved-photoemission data give a rather standard doping behavior of this compound in its highly doped regime.

A low-cost non-toxic post-growth activation step for CdTe solar cells

NASA Astrophysics Data System (ADS)

Major, J. D.; Treharne, R. E.; Phillips, L. J.; Durose, K.

2014-07-01

Cadmium telluride, CdTe, is now firmly established as the basis for the market-leading thin-film solar-cell technology. With laboratory efficiencies approaching 20 per cent, the research and development targets for CdTe are to reduce the cost of power generation further to less than half a US dollar per watt (ref. 2) and to minimize the environmental impact. A central part of the manufacturing process involves doping the polycrystalline thin-film CdTe with CdCl2. This acts to form the photovoltaic junction at the CdTe/CdS interface and to passivate the grain boundaries, making it essential in achieving high device efficiencies. However, although such doping has been almost ubiquitous since the development of this processing route over 25 years ago, CdCl2 has two severe disadvantages; it is both expensive (about 30 cents per gram) and a water-soluble source of toxic cadmium ions, presenting a risk to both operators and the environment during manufacture. Here we demonstrate that solar cells prepared using MgCl2, which is non-toxic and costs less than a cent per gram, have efficiencies (around 13%) identical to those of a CdCl2-processed control group. They have similar hole densities in the active layer (9 × 1014 cm-3) and comparable impurity profiles for Cl and O, these elements being important p-type dopants for CdTe thin films. Contrary to expectation, CdCl2-processed and MgCl2-processed solar cells contain similar concentrations of Mg; this is because of Mg out-diffusion from the soda-lime glass substrates and is not disadvantageous to device performance. However, treatment with other low-cost chlorides such as NaCl, KCl and MnCl2 leads to the introduction of electrically active impurities that do compromise device performance. Our results demonstrate that CdCl2 may simply be replaced directly with MgCl2 in the existing fabrication process, thus both minimizing the environmental risk and reducing the cost of CdTe solar-cell production.

Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

NASA Astrophysics Data System (ADS)

Kitagawa, Hiroyuki; Matsuura, Tsukasa; Kato, Toshihito; Kamata, Kin-ya

2015-06-01

N-type Bi2Te2.85Se0.15 thermoelectric materials were prepared by liquid phase growth (LPG) using a sliding boat, a simple and short fabrication process for Bi2Te3-related materials. Cu was selected as a donor dopant, and its effect on thermoelectric properties was investigated. Thick sheets and bars of Cu x Bi2 Te2.85Se0.15 ( x=0-0.25) of 1-2mm in thickness were obtained using the process. X-ray diffraction patterns and scanning electron micrographs showed that the in-plane direction tended to correspond to the hexagonal c-plane, which is the preferred direction for thermoelectric conversion. Cu-doping was effective in controlling conduction type and carrier (electron) concentration. The conduction type was p-type for undoped Bi2Te2.85Se0.15 and became n-type after Cu-doping. The Hall carrier concentration was increased by Cu-doping. Small resistivity was achieved in Cu0.02Bi2Te2.85Se0.15 owing to an optimized amount of Cu-doping and high crystal orientation. As a result, the maximum power factor near 310K for Cu0.02Bi2Te2.85Se0.15 was approximately 4×10-3W/K2m and had good reproducibility. Furthermore, the thermal stability of Cu0.02Bi2Te2.85Se0.15 was also confirmed by thermal cycling measurements of electrical resistivity. Thus, n-type Bi2Te2.85Se0.15 with a large power factor was prepared using the present LPG process.

Fluctuating Charge-Order in Optimally Doped Bi- 2212 Revealed by Momentum-resolved Electron Energy Loss Spectroscopy

NASA Astrophysics Data System (ADS)

Husain, Ali; Vig, Sean; Kogar, Anshul; Mishra, Vivek; Rak, Melinda; Mitrano, Matteo; Johnson, Peter; Gu, Genda; Fradkin, Eduardo; Norman, Michael; Abbamonte, Peter

Static charge order is a ubiquitous feature of the underdoped cuprates. However, at optimal doping, charge-order has been thought to be completely suppressed, suggesting an interplay between the charge-ordering and superconducting order parameters. Using Momentum-resolved Electron Energy Loss Spectroscopy (M-EELS) we show the existence of diffuse fluctuating charge-order in the optimally doped cuprate Bi2Sr2CaCu2O8+δ (Bi-2212) at low-temperature. We present full momentum-space maps of both elastic and inelastic scattering at room temperature and below the superconducting transition with 4meV resolution. We show that the ``rods'' of diffuse scattering indicate nematic-like fluctuations, and the energy width defines a fluctuation timescale of 160 fs. We discuss the implications of fluctuating charge-order on the dynamics at optimal doping. This work was supported by the Gordon and Betty Moore Foundation's EPiQS Initiative through Grant GBMF-4542. An early prototype of the M-EELS instrument was supported by the DOE Center for Emergent Superconductivity under Award No. DE-AC02-98CH10886.

Doping effect in layer structured SrBi2Nb2O9 ferroelectrics

NASA Astrophysics Data System (ADS)

Wu, Yun; Forbess, Mike J.; Seraji, Seana; Limmer, Steven J.; Chou, Tammy P.; Nguyen, Carolyn; Cao, Guozhong

2001-11-01

This article reports a systematic study of doping effects on the crystal structure, microstructure, dielectric, and electrical properties of layer-structured strontium bismuth niobate, SrBi2Nb2O9 (SBN), ferroelectrics. Substitution in both the A site (Sr2+ by Ca2+ and Ba2+) and B site (Nb5+ by V5+) up to 30 at % were studied. It was found that crystal lattice constant, dielectric, and electrical properties of SBN ferroelectrics varied appreciably with the type and amount of dopants. The relationships among the ionic radii, structural constraint imposed by [Bi2O2]2+ interlayers, and properties were discussed.

Microstructure investigations of Yb- and Bi-doped Mg{sub 2}Si prepared from metal hydrides for thermoelectric applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Janka, Oliver; Zaikina, Julia V.; Bux, Sabah K.

2017-01-15

Within the field of thermoelectric materials for energy conversion magnesium silicide, Mg{sub 2}Si, is an outstanding candidate due to its low density, abundant constituents and low toxicity. However electronic and thermal tuning of the material is a required necessity to improve its Figure of Merit, zT. Doping of Yb via reactive YbH{sub 2} into the structure is performed with the goal of reducing the thermal conductivity. Hydrogen is released as a by-product at high temperatures allowing for facile incorporation of Yb into the structure. We report on the properties of Yb- and Bi-doped Mg{sub 2}Si prepared with MgH{sub 2} andmore » YbH{sub 2} with the focus on the synthetic conditions, and samples’ microstructure, investigated by various electron microscopy techniques. Yb is found in the form of both Yb{sub 3}Si{sub 5} inclusions and Yb dopant segregated at the grain boundary substituting for Mg. The addition of 1 at% Yb concentration reduced the thermal conductivity, providing a value of 30 mW/cm K at 800 K. In order to adjust carrier concentration, the sample is additionally doped with Bi. The impact of the microstructure on the transport properties of the obtained material is studied. Idealy, the reduction of the thermal conductivity is achieved by doping with Yb and the electronic transport is adjusted by doping with Bi. Large grain microstructure facilitates the electronic transport. However, the synthetic conditions that provide the optimized microstructure for electrical transport do not facilitate the additional Yb dopant incorporation. Therefore, the Yb and Bi containing sample with the optimized microstructure provides a zT=0.46 at 800 K. - Graphical abstract: 1% or less addition of YbH{sub 2} to Mg{sub 2}Si significantly reduces the thermal conductivity of the material. Yb replaces some Mg in Mg{sub 2}Si and the remainder is distributed as Yb{sub 3}Sb{sub 5} in the Yb-doped Mg{sub 2}Si matrix. Correlation between the observed grain size and transport

Thermoelectric properties and thermal stability of Bi-doped PbTe single crystal

NASA Astrophysics Data System (ADS)

Chen, Zhong; Li, Decong; Deng, Shuping; Tang, Yu; Sun, Luqi; Liu, Wenting; Shen, Lanxian; Yang, Peizhi; Deng, Shukang

2018-06-01

In this study, n-type Bi-doped single-crystal PbTe thermoelectric materials were prepared by melting and slow cooling method according to the stoichiometric ratio of Pb:Bi:Te = 1-x:x:1 (x = 0, 0.1, 0.15, 0.2, 0.25). The X-ray diffraction patterns of Pb1-xBixTe samples show that all main diffraction peaks are well matched with the PbTe matrix, which has a face-centered cubic structure with the space group Fm 3 bar m . Electron probe microanalysis reveals that Pb content decreases gradually, and Te content remains invariant basically with the increase of Bi content, indicating that Bi atoms are more likely to replace Pb atoms. Thermal analysis shows that the prepared samples possess relatively high thermal stability. Simultaneously, transmission electron microscopy and selected area electron diffraction pattern indicate that the prepared samples have typical single-crystal structures with good mechanical properties. Moreover, the electrical conductivity of the prepared samples improved significantly compared with that of the pure sample, and the maximum ZT value of 0.84 was obtained at 600 K by the sample with x = 0.2.

Enhanced photocatalytic performance of Er-doped Bi{sub 24}O{sub 31}Br{sub 10}: Facile synthesis and photocatalytic mechanism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhang Sheng, E-mail: lzsliu2008@hotmail.com; Liu, Zhi Lin; Liu, Jin Long

2016-04-15

Highlights: • Er-doped Bi{sub 24}O{sub 31}Br{sub 10} have been prepared via a one-pot solvothermal method. • Er doping drastically improves the photocatalytic activity of Bi{sub 24}O{sub 31}Br{sub 10}. • The enhanced activity is attributed to effective electron trapping and up-conversion process resulting from Er{sup 3+}. • Holes and super-oxide radicals are main active species. - Abstract: Erbium (Er) doped Bi{sub 24}O{sub 31}Br{sub 10} samples were successfully prepared by using a solvothermal method. The samples were characterized by XRD, XPS, SEM, TEM, BET, DRS, PL and EIS. The photocatalytic activity was evaluated by the degradation of rhodamine B (RhB) and methylmore » orange (MO) under visible light irradiation. The result shows that Er dopant induces a significant improvement in the photocatalytic activity. 1.0% Er–Bi{sub 24}O{sub 31}Br{sub 10} sample exhibits the best photocatalytic performance. The enhanced photocatalytic activity is attributed to the effective trapping of photogenerated electron by Er{sup 3+} ion and the up-conversion process resulting from Er dopant. In addition, it is found that holes and super-oxide radicals play main role in the photocatalytic degradation of RhB and MO.« less

Enhanced photocatalytic activity of Te-doped Bi2MoO6 under visible light irradiation: Effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability

NASA Astrophysics Data System (ADS)

Chen, Shuguang; Li, Yuhan; Wu, Zixu; Wu, Baoxin; Li, Haibin; Li, Fujin

2017-05-01

Te-doped Bi2MoO6 photocatalyst was hydrothermally synthesized, and nonmetal atoms Te were homogeneously incorporated into Bi2MoO6 lattice with the substitution of Te4+ to Mo6+. With increasing Te-doping concentration in Bi2MoO6, no detectable band-gap narrowing but more and more severe inhomogeneous lattice distortions were determined. The activity of Bi2MoO6 photocatalyst was evaluated through methylene blue degradation under visible light irradiation (λ>410 nm) and was greatly enhanced by Te-doping. When Te-doped Bi2MoO6 was synthesized at Te/Mo molar ratio of 7.5%, a maximum first-order rate constant of methylene blue degradation was obtained. The inhomogeneous lattice distortion generated an internal dipole moment, and the holes generated with the substitution of Te4+ to Mo6+ acted as the capturing centers of photogenerated electrons, thus the effective separation of photogenerated carriers was facilitated to result in a relatively high concentration of holes on the surface of Te-doped Bi2MoO6 to be favorable for the efficient methylene blue degradation.

Structural and morphological study of Fe-doped Bi-based superconductor

NASA Astrophysics Data System (ADS)

Singh, Yadunath; Kumar, Rohitash

2018-05-01

In the present work, we report the study of iron-doped Bi-based superconductor sample with stoichiometric composition of Bi2Sr2Can-1(Cu1-x Fex)3O2n+4 where n=3 and x = 0.7. This sample was prepared by grinding the precursor oxides in the Ball mill for 6 hours continuous at the rate of 400 rpm for a proper mixing and to obtain the required grain size. Then the solid-state reaction method was used to prepare the sample. X-ray diffraction (XRD) and scanning electron microscopy (SEM) in combination with energy dispersive X-ray fluorescence analysis (EDX) were performed for determination of the crystal structure, surface morphology and trace the material elements of samples, respectively. The surface microscopy data were collected over a selected area of the surface of the material and a two-dimensional image generated that displays spatial variations in properties including chemical characterization and orientation of materials.

Surface acceptor states in MBE-grown CdTe layers

NASA Astrophysics Data System (ADS)

Wichrowska, Karolina; Wosinski, Tadeusz; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

2018-04-01

A deep-level hole trap associated with surface defect states has been revealed with deep-level transient spectroscopy investigations of metal-semiconductor junctions fabricated on nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. The trap displayed the hole-emission activation energy of 0.33 eV and the logarithmic capture kinetics indicating its relation to extended defect states at the metal-semiconductor interface. Strong electric-field-induced enhancement of the thermal emission rate of holes from the trap has been attributed to the phonon-assisted tunneling effect from defect states involving very large lattice relaxation around the defect and metastability of its occupied state. Passivation with ammonium sulfide of the CdTe surface, prior to metallization, results in a significant decrease in the trap density. It also results in a distinct reduction in the width of the surface-acceptor-state-induced hysteresis loops in the capacitance vs. voltage characteristics of the metal-semiconductor junctions.

Effects of iron deficiency on anisotropy and ferromagnetic resonance linewidth in Bi-doped LiZn ferrite

NASA Astrophysics Data System (ADS)

Jiang, Xiaona; Wang, Wei; Yu, Zhong; Sun, Ke; Lan, Zhongwen; Zhang, Xinran; Harris, Vincent G.

2017-05-01

Bi-doped LiZn ferrites with different iron deficiencies were fabricated by a conventional ceramic method. Anisotropy constant (K1) was calculated and ferromagnetic resonance (FMR) linewidth (ΔH) was investigated. Crystalline anisotropy broadening linewidth (ΔHa) and porosity broadening linewidth (ΔHp) were derived by an approximate calculation based on dipolar narrowing theory, which play a significant role in contributions to FMR linewidth and occupy more than 90 % of ΔH. Physical and static magnetic properties of LiZn ferrite with iron deficiency are presented, which supports a decline in linewidths with increasing iron deficiency. Iron deficiency makes K1, ΔHa and ΔHp reduce. The results also show that ΔHp is the majority of contributions to ΔH in Bi-doped LiZn ferrite and densification is an effective method to decrease ΔH.

Enhanced photocatalytic activity of Te-doped Bi{sub 2}MoO{sub 6} under visible light irradiation: Effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Shuguang, E-mail: csustcsg@yahoo.com; Li, Yuhan; Wu, Zixu

Te-doped Bi{sub 2}MoO{sub 6} photocatalyst was hydrothermally synthesized, and nonmetal atoms Te were homogeneously incorporated into Bi{sub 2}MoO{sub 6} lattice with the substitution of Te{sup 4+} to Mo{sup 6+}. With increasing Te-doping concentration in Bi{sub 2}MoO{sub 6}, no detectable band-gap narrowing but more and more severe inhomogeneous lattice distortions were determined. The activity of Bi{sub 2}MoO{sub 6} photocatalyst was evaluated through methylene blue degradation under visible light irradiation (λ>410 nm) and was greatly enhanced by Te-doping. When Te-doped Bi{sub 2}MoO{sub 6} was synthesized at Te/Mo molar ratio of 7.5%, a maximum first-order rate constant of methylene blue degradation was obtained.more » The inhomogeneous lattice distortion generated an internal dipole moment, and the holes generated with the substitution of Te{sup 4+} to Mo{sup 6+} acted as the capturing centers of photogenerated electrons, thus the effective separation of photogenerated carriers was facilitated to result in a relatively high concentration of holes on the surface of Te-doped Bi{sub 2}MoO{sub 6} to be favorable for the efficient methylene blue degradation. - Graphical abstract: With the substitution of Te{sup 4+} to Mo{sup 6+}, effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability is achieved to be responsible for enhanced photocatalytic activity of Te-doped Bi{sub 2}MoO{sub 6}. - Highlights: • Nonmetal Te is incorporated into Bi{sub 2}MoO{sub 6} with the substitution of Te{sup 4+} to Mo{sup 6+}. • Revealing inhomogeneous lattice distortion and improved electron capturing ability. • Effective separation of photogenerated carriers in Te-doped Bi{sub 2}MoO{sub 6} is achieved. • The mechanism of methylene blue degradation over Te-doped Bi{sub 2}MoO{sub 6} is proposed.« less

Electric and dielectric properties of Bi-doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo Fengchao; He Jinliang; Hu Jun

2009-04-01

Pure and Bi-doped Bi{sub x}CaCu{sub 3}Ti{sub 4}O{sub 12+1.5x} (BCCTO, x=0, 0.15, 0.25, and 0.3) ceramics were fabricated by the solid-state sintering method. The results indicate that the additional bismuth has a great influence on both the microstructures and the electric properties. A new phase (Bi{sub 4}Ti{sub 3}O{sub 12}) can be observed in the doped samples from the x-ray diffraction patterns. Additionally, the CCTO gain size can be controlled by bismuth content. All of the BCCTO samples show high dielectric permittivity ({approx}10{sup 4} at 10{sup 3} Hz) and varistor effect, and the relaxation peak shifts to higher frequency. The resistance risesmore » with the increase in bismuth, and the activation energy at the grain boundary is reduced from 0.65 to 0.47 eV.« less

Enhancement of tetragonal anisotropy and stabilisation of the tetragonal phase by Bi/Mn-double-doping in BaTiO3 ferroelectric ceramics

PubMed Central

Yabuta, Hisato; Tanaka, Hidenori; Furuta, Tatsuo; Watanabe, Takayuki; Kubota, Makoto; Matsuda, Takanori; Ifuku, Toshihiro; Yoneda, Yasuhiro

2017-01-01

To stabilise ferroelectric-tetragonal phase of BaTiO3, the double-doping of Bi and Mn up to 0.5 mol% was studied. Upon increasing the Bi content in BaTiO3:Mn:Bi, the tetragonal crystal-lattice-constants a and c shrank and elongated, respectively, resulting in an enhancement of tetragonal anisotropy, and the temperature-range of the ferroelectric tetragonal phase expanded. X-ray absorption fine structure measurements confirmed that Bi and Mn were located at the A(Ba)-site and B(Ti)-site, respectively, and Bi was markedly displaced from the centrosymmetric position in the BiO12 cluster. This A-site substitution of Bi also caused fluctuations of B-site atoms. Magnetic susceptibility measurements revealed a change in the Mn valence from +4 to +3 upon addition of the same molar amount of Bi as Mn, probably resulting from a compensating behaviour of the Mn at Ti4+ sites for donor doping of Bi3+ into the Ba2+ site. Because addition of La3+ instead of Bi3+ showed neither the enhancement of the tetragonal anisotropy nor the stabilisation of the tetragonal phase, these phenomena in BaTiO3:Mn:Bi were not caused by the Jahn-Teller effect of Mn3+ in the MnO6 octahedron, but caused by the Bi-displacement, probably resulting from the effect of the 6 s lone-pair electrons in Bi3+. PMID:28367973

Luminescence properties of Y2O3:Bi3+, Yb3+ co-doped phosphor for application in solar cells

NASA Astrophysics Data System (ADS)

Lee, E.; Kroon, R. E.; Terblans, J. J.; Swart, H. C.

2018-04-01

Bismuth (Bi3+) and ytterbium (Yb3+) co-doped yttrium oxide (Y2O3) phosphor powder was successfully synthesised using the co-precipitation technique. The X-ray diffraction (XRD) patterns confirmed that a single phase cubic structure with a Ia-3 space group was formed. The visible emission confirmed the two symmetry sites, C2 and S6, found in the Y2O3 host material and revealed that Bi3+ ions preferred the S6 site as seen the stronger emission intensity. The near-infrared (NIR) emission of Yb3+ increased significantly by the presence of the Bi3+ ions when compared to the singly doped Y2O3:Yb3+ phosphor with the same Yb3+ concentration. An increase in the NIR emission intensity was also observed by simply increasing the Yb3+ concentration in the Y2O3:Bi3+, Yb3+ phosphor material where the intensity increased up to x = 5.0 mol% of Yb3+ before decreasing due to concentration quenching.

Structure Evolution and Multiferroic Properties in Cobalt Doped Bi4NdTi3Fe1-xCoxO15-Bi3NdTi2Fe1-xCoxO12-δ Intergrowth Aurivillius Compounds

PubMed Central

Zhang, D. L.; Huang, W. C.; Chen, Z. W.; Zhao, W. B.; Feng, L.; Li, M.; Yin, Y. W.; Dong, S. N.; Li, X. G.

2017-01-01

Here, we report the structure evolution, magnetic and ferroelectric properties in Co-doped 4- and 3-layered intergrowth Aurivillius compounds Bi4NdTi3Fe1-xCoxO15-Bi3NdTi2Fe1-xCoxO12-δ. The compounds suffer a structure evolution from the parent 4-layered phase (Bi4NdTi3FeO15) to 3-layered phase (Bi3NdTi2CoO12-δ) with increasing cobalt doping level from 0 to 1. Meanwhile the remanent magnetization and polarization show opposite variation tendencies against the doping level, and the sample with x = 0.3 has the largest remanent magnetization and the smallest polarization. It is believed that the Co concentration dependent magnetic properties are related to the population of the Fe3+ -O-Co3+ bonds, while the suppressed ferroelectric polarization is due to the enhanced leakage current caused by the increasing Co concentration. Furthermore, the samples (x = 0.1–0.7) with ferromagnetism show magnetoelectric coupling effects at room temperature. The results indicate that it is an effective method to create new multiferroic materials through modifying natural superlattices. PMID:28272495

Effect of doping in the Bi-Sr-Ca-Cu-O superconductor

NASA Technical Reports Server (NTRS)

Akbar, S. A.; Wong, M. S.; Botelho, M. J.; Sung, Y. M.; Alauddin, M.; Drummer, C. E.; Fair, M. J.

1991-01-01

The results of the effect of doping on the superconducting transition in the Bi-Sr-Ca-Cu-O system are reported. Samples were prepared under identical conditions with varying types (Pb, Sb, Sn, Nb) and amounts of dopants. All samples consisted of multiple phases, and showed stable and reproducible superconducting transitions. Stabilization of the well known 110 K phase depends on both the type and amount of dopant. No trace of superconducting phase of 150 K and above was observed.

Photoluminescence and electrical properties of Eu-doped (Na0.5Bi0.5)TiO3 ferroelectric single crystals

NASA Astrophysics Data System (ADS)

Zhang, Haiwu; Zhao, Xiangyong; Deng, Hao; Chen, Chao; Lin, Di; Li, Xiaobing; Yan, Jun; Luo, Haosu

2014-02-01

Eu3+-doped Na0.5Bi0.5TiO3 (Eu:NBT) single crystals were grown by a top-seeded solution growth method. Photoluminescence emission and excitation spectra of Eu:NBT were investigated. The two transitions in 7F0 → 5D0 excitation spectra reveal that Eu3+ ions were incorporated into two adjacent crystallographic sites in NBT, i.e., Bi3+ and Na+ sites. The former has a symmetrical surrounding, while the later has a disordered environment, which was confirmed by decay curve measurements. The dielectric dispersion behavior was depressed and the piezoelectric and ferroelectric properties were improved after Eu doping.

Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasileska, Dragica

Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously overmore » the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes

Influence of cobalt doping on structural and magnetic properties of BiFeO3 nanoparticles

NASA Astrophysics Data System (ADS)

Khan, U.; Adeela, N.; Javed, K.; Riaz, S.; Ali, H.; Iqbal, M.; Han, X. F.; Naseem, S.

2015-11-01

Nanocrystalline cobalt-doped bismuth ferrites with general formula of BiFe1- δ Co δ O3 (0 ≤ δ ≤ 0.1) have been synthesized using solution evaporation method. Structure and phase identification was performed with X-ray diffraction (XRD) technique. The results confirm the formation of rhombohedral-distorted Perovskite structure with R3c symmetry. A decrease in lattice parameters and an increase in X-ray density have been observed with increasing cobalt concentration in BiFeO3. Particle size determined by transmission electron microscope was in good agreement with XRD, i.e., 39 nm. Room-temperature coercivity and saturation magnetization of nanoparticles were increased up to 7.5 % of cobalt doping. Low-temperature magnetic measurements of selected sample showed increasing behavior in saturation magnetization, coercivity, effective magnetic moments, and anisotropy constant. An increase in coercivity with decrease in temperature followed theoretical model of Kneller's law, while modified Bloch's model was employed for saturation magnetization in temperature range of 5-300 K.

Enhanced stability of Bi-doped Ge2Sb2Te5 amorphous films

NASA Astrophysics Data System (ADS)

Dyussembayev, S.; Prikhodko, O.; Tsendin, K.; Timoshenkov, S.; Korobova, N.

2014-09-01

Although, several reviews have appeared on various physical properties and applications of chalcogenide glasses, there is no thorough study of local atomic structure and its modification for eutectic Ge-Sb-Te alloys doped with Bi. Ge2Sb2Te5 pure and Bi-doped films were deposited by ion-plasma sputtering method of synthesized GTS material on Si (100) and glass substrates coated with a conductive Al layer which was used as a bottom electrode. Current-voltage characteristics of different points of the same samples have been measured. Random distribution of inclusions within the sample made it possible to investigate the dependence of switching and memory effects on the phase composition at a constant value of other parameters. Measurements in the current controlled mode clearly showed that the memory state formation voltage does not depend on current in a wide range. Results indicate that the development of imaging technologies phase memory cells need to pay special attention to the conditions of Ge-Sb-Te film preparation. To increase the number of cycles "write - erase" should be additional prolonged annealing of the synthesized films.

Spin-Glass Transition and Giant Paramagnetism in Heavily Hole-Doped Bi2Sr2Co2Oy

NASA Astrophysics Data System (ADS)

Hsu, Hung Chang; Lee, Wei-Li; Lin, Jiunn-Yuan; Young, Ben-Li; Kung, Hsiang-Hsi; Huang, Jian; Chou, Fang Cheng

2014-02-01

Hole-doped single crystals of misfit-layered cobaltate Bi2-xPbxSr2-zCo2Oy (x = 0-0.61, y = 8.28-8.62, and z = 0.01-0.22) have been successfully grown using the optical floating-zone method. Heavier hole doping has been achieved through both Pb substitution in the Bi site and the more effective Sr vacancy formation. The Co4+ : Co3+ ratio can be raised significantly from its original ˜1 : 1 to 4.5 : 1, as confirmed by iodometric titration. A spin-glass transition temperature of Tg ˜ 70 K is confirmed by ac susceptibility measurement when the Co4+ : Co3+ ratio becomes higher than 2 : 1, presumably owing to the significantly increased probability of triangular geometrical frustration among antiferromagnetically coupled localized Co4+ spins.

Combined optical/MCD/ODMR investigations of photochromism in doubly-doped Bi12GeO20

NASA Astrophysics Data System (ADS)

Briat, B.; Borowiec, M. T.; Rjeily, H. B.; Ramaz, F.; Hamri, A.; Szymczak, H.

Electron paramagnetic resonance is detected optically via the change of magnetic circular dichroism under microwaves at 35 GHz. The technique is applied to Bi12GeO20 samples co-doped with vanadium and a second transition metal (Cr, Mn, Co, Cu). The optical and magnetic properties of several paramagnetic defects (V-Ge(4+) and Cr-Ge(4+)) are directly correlated. The basic photochromic processes occuring in samples doped with V, Mn, and Mn+V are explained. The V-Ge(4+/5+) level is positioned roughly 2.2 eV above the valence band.

The Gadolinium (Gd3+) and Tin (Sn4+) Co-doped BiFeO3 Nanoparticles as New Solar Light Active Photocatalyst

PubMed Central

Irfan, Syed; Rizwan, Syed; Shen, Yang; Li, Liangliang; Asfandiyar, A; Butt, Sajid; Nan, Ce-Wen

2017-01-01

The process of photocatalysis is appealing to huge interest motivated by the great promise of addressing current energy and environmental issues through converting solar light directly into chemical energy. However, an efficient solar energy harvesting for photocatalysis remains a critical challenge. Here, we reported a new full solar spectrum driven photocatalyst by co-doping of Gd3+ and Sn4+ into A and B-sites of BiFeO3 simultaneously. The co-doping of Gd3+ and Sn4+ played a key role in hampering the recombination of electron-hole pairs and shifted the band-gap of BiFeO3 from 2.10 eV to 2.03 eV. The Brunauer-Emmett-Teller (BET) measurement confirmed that the co-doping of Gd3+ and Sn4+ into BiFeO3 increased the surface area and porosity, and thus the photocatalytic activity of the Bi0.90Gd0.10Fe0.95Sn0.05O3 system was significantly improved. Our work proposed a new photocatalyst that could degrade various organic dyes like Congo red, Methylene blue, and Methyl violet under irradiation with different light wavelengths and gave guidance for designing more efficient photocatalysts. PMID:28195198

Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator

NASA Astrophysics Data System (ADS)

Singh, Rahul; Shukla, K. K.; Kumar, A.; Okram, G. S.; Singh, D.; Ganeshan, V.; Lakhani, Archana; Ghosh, A. K.; Chatterjee, Sandip

2016-09-01

Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases.

First-principles study on doping and temperature dependence of thermoelectric property of Bi{sub 2}S{sub 3} thermoelectric material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Donglin; Hu, Chenguo, E-mail: hucg@cqu.edu.cn; Zhang, Cuiling

2013-05-15

Graphical abstract: The direction-induced ZT is found. At ZZ direction and n = 1.47 × 10{sup 19} cm{sup −3}, the ZT can reach maximal value, 0.36, which is three times as much as maximal laboratorial value. This result matches well the analysis of electron effective mass. Highlights: ► Electrical transportations of Bi{sub 2}S{sub 3} depend on the concentration and temperature. ► The direction-induced ZT is found. ► At ZZ direction and n = 1.47 × 10{sup 19} cm{sup −3}, the ZT can reach maximal value, 0.36. ► The maximal ZT value is three times as much as maximal laboratorial value.more » ► By doping and temperature tuning, Bi{sub 2}S{sub 3} is a promising thermoelectric material. - Abstract: The electronic structure and thermoelectric property of Bi{sub 2}S{sub 3} are investigated. The electron and hole effective mass of Bi{sub 2}S{sub 3} is analyzed in detail, from which we find that the thermoelectric transportation varies in different directions in Bi{sub 2}S{sub 3} crystal. Along ac plane the higher figure of merit (ZT) could be achieved. For n-type doped Bi{sub 2}S{sub 3}, the optimal doping concentration is found in the range of (1.0–5.0) × 10{sup 19} cm{sup −3}, in which the maximal ZT reaches 0.21 at 900 K, but along ZZ direction, the maximal ZT reaches 0.36. These findings provide a new understanding of thermoelectricity-dependent structure factors and improving ZT ways. The donor concentration N increases as T increases at one bar of pressure under a suitable chemical potential μ, but above this chemical potential μ, the donor concentration N keeps a constant.« less

Andreev Reflection Spectroscopy of Nb-doped Bi2Se3 Topological Insulator

NASA Astrophysics Data System (ADS)

Kurter, C.; Finck, A. D. K.; Qiu, Y.; Huemiller, E.; Weis, A.; Atkinson, J.; Medvedeva, J.; Hor, Y. S.; van Harlingen, D. J.

2015-03-01

Doped topological insulators are speculated to realize p-wave superconductivity with unusual low energy quasiparticles, such as surface Andreev bound states. We present point contact spectroscopy of thin exfoliated flakes of Nb-doped Bi2Se3 where superconductivity persists up to ~ 1 K, compared to 3.2 K in bulk crystals. The critical magnetic field is strongly anisotropic, consistent with quasi-2D behavior. Andreev reflection measurements of devices with low resistance contacts result in prominent BTK-like behavior with an enhanced conductance plateau at low bias. For high resistance contacts, we observe a split zero bias conductance anomaly and additional features at the superconducting gap. Our results suggest that this material is a promising platform for studying topological superconductivity. We acknowledge support from Microsoft Project Q.

The effects of anode material type on the optoelectronic properties of electroplated CdTe thin films and the implications for photovoltaic application

NASA Astrophysics Data System (ADS)

Echendu, O. K.; Dejene, B. F.; Dharmadasa, I. M.

2018-03-01

The effects of the type of anode material on the properties of electrodeposited CdTe thin films for photovoltaic application have been studied. Cathodic electrodeposition of two sets of CdTe thin films on glass/fluorine-doped tin oxide (FTO) was carried out in two-electrode configuration using graphite and platinum anodes. Optical absorption spectra of films grown with graphite anode displayed significant spread across the deposition potentials compared to those grown with platinum anode. Photoelectrochemical cell result shows that the CdTe grown with graphite anode became p-type after post-deposition annealing with prior CdCl2 treatment, as a result of carbon incorporation into the films, while those grown with platinum anode remained n-type after annealing. A review of recent photoluminescence characterization of some of these CdTe films reveals the persistence of a defect level at (0.97-0.99) eV below the conduction band in the bandgap of CdTe grown with graphite anode after annealing while films grown with platinum anode showed the absence of this defect level. This confirms the impact of carbon incorporation into CdTe. Solar cell made with CdTe grown with platinum anode produced better conversion efficiency compared to that made with CdTe grown using graphite anode, underlining the impact of anode type in electrodeposition.

Study of tellurium precipitates in CdTe crystals

NASA Technical Reports Server (NTRS)

Jayatirtha, H. N.; Henderson, D. O.; Burger, A.; Volz, M. P.

1993-01-01

The effect of tellurium precipitates was studied in medium resistivity (10 exp 3-10 exp 6 ohm cm) undoped and Cl-doped CdTe using differential scanning calorimetry (DSC) and mid-infrared spectroscopy and the results were correlated with near-infrared microscopy photographs. When present in a significant quantity (about 0.25 wt pct), we show that Te precipitates are detectable using DSC measurements. In the mid-infrared, the contribution of the absorption by free-carriers is negligible, and therefore, the effect of the Te precipitates in these crystals can be considered uncoupled from the effects of Cd vacancies.

Effects of Bi doping on structural and magnetic properties of double perovskite oxides Sr2FeMoO6

NASA Astrophysics Data System (ADS)

Lan, Yaohai; Feng, Xiaomei; Zhang, Xin; Shen, Yifu; Wang, Ding

2016-08-01

A new series of double perovskite compounds Sr2 - δBixFeMoO6 have been synthesized by solid-state reaction. δ refers to the nominal doping content of Bi (δ = 0, 0.1, 0.2, 0.3, 0.4, 0.5), while the Bi content obtained by the Rietveld refinement is x = 0, 0.01, 0.05, 0.08, 0.10 and 0.12. Their crystal structure and magnetic properties are investigated. Rietveld analysis of the room temperature XRD data shows all the samples crystallize in the cubic crystal structure with the space group Fm 3 ‾ m and have no phase transition. SEM images show that substituted samples present a denser microstructure and bigger grains than Sr2FeMoO6, which is caused by a liquid sintering process due to the effumability of Bi. The unit cell volume increases with augment of Bi3+ concentration despite the smaller ionic radius Bi3+ compared with the Sr2+, which is attributed to the electronic effect. The degree of Fe/Mo order (η) increases first and then decreases to almost disappearance with augment of Bi doping, which is the result of contribution from electronic effect. Calculated saturation magnetization Ms(3) according to our phase separation likeness model matches well with the experimental ones. The observed variations of magnetoresistance (MR) are consistent with the Fe/Mo order (η) due to the internal connection with anti-site defect (ASD).

Photoelectrochemical performance of W-doped BiVO4 thin-films deposited by spray pyrolysis

NASA Astrophysics Data System (ADS)

Holland, Stephen K.; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

2013-09-01

The effect of tungsten doping and hydrogen annealing treatments on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting was studied. Thin films of BiVO4 were deposited on ITO-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) in the aqueous precursor. The 1.7 μm - 2.2 μm thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375 ºC in 3% H2 exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination. This performance enhancement was believed to be due to the formation of oxygen vacancies, which are shallow electron donors, in the films. Films doped with 1% or 5% tungsten from either STA or AMT exhibited reduced photoelectrochemical performance and greater sample-to-sample performance variations. Powder X-ray diffraction data of the undoped films indicated that they were comprised primarily of the monoclinic scheelite phase while unidentified phases were also present. Scanning electron microscopy showed slightly different morphology characteristics for the Wdoped films. It is surmised that the addition of W in the deposition process promoted the morphology differences and the formation of different phases, thus reducing the PEC performance of the photoanode samples. Significant PEC performance variability was also observed among films deposited using the described process.

Fabrication of Pt nanoparticles decorated Gd-doped Bi2MoO6 nanosheets: Design, radicals regulating and mechanism of Gd/Pt-Bi2MoO6 photocatalyst

NASA Astrophysics Data System (ADS)

Li, Hongda; Li, Wenjun; Wang, Fangzhi; Liu, Xintong; Ren, Chaojun; Miao, Xiao

2018-01-01

A new Pt nanoparticles decorated Gd-doped Bi2MoO6 photocatalyst was synthesized by the hydrothermal process and in-situ reduction method. The crystal structure, morphology, chemical state and optical property of the obtained photocatalysts were investigated. The activities of photocatalysts were also evaluated by the degradation of Rhodamine B, Tetracyclines and 4-Chlorophenol under visible light irradiation, and the results indicated that the Gd/Pt co-modified Bi2MoO6 sample shows better photocatalytic activity. Meanwhile, the results of trapping experiments and Electron Spin Resonance (ESR) spectra demonstrated that the rad OH radicals can be formed by doping of Gd3+ ions, and the addition of Pt was conducive to the producing of more • O2- and rad OH radicals. Also the results from the degradation of 4-chlorophenol implied that the formed rad OH radicals in the system of Gd/Pt-BMO possess stronger oxidizability than • O2- radicals for degrading the special organics which are difficult to be mineralized. Additionally, the mechanism about the excellent photocatalytic activity of Gd/Pt co-modified Bi2MoO6 was also discussed.

Effect of CdTe Back Surface Field on the Efficiency Enhancement of a CGS Based Thin Film Solar Cell

NASA Astrophysics Data System (ADS)

Khattak, Yousaf Hameed; Baig, Faisal; Marí, Bernabé; Beg, Saira; Gillani, Syed Rizwan; Ahmed, Tanveer

2018-05-01

Numerical analysis of the proposed solar cell is based on cadmium telluride (CdTe) and copper gallium sulfide (CuGaS2), also known as CGS, is proposed in this research work. Performance of a CdTe/CGS/CdS/ZnO cell is analyzed in Solar Cell Capacitance Simulator (SCAPS) software, by changing the physical parameters like doping density of acceptor, doping density of donor, absorber thickness and buffer thickness. The cell structure is in the same order as the CGS/CdS/ZnO with CdTe used for the back surface field layer. Power conversion efficiency of the CGS/CdS/ZnO solar cell without CdTe is 10.578% (with FF = 83.70%, V oc = 0.82 V, J sc = 15.40 mA/cm2) and conversion efficiency of CdTe/CGS/CdS/ZnO is 28.20% (with FF = 77.66%, V oc = 1.22 V, J sc = 29.63 mA/cm3). The overall investigation and simulation results from the modeling of a proposed device in SCAPS is very useful for the understanding of the fundamentals of photovoltaic devices and gives feedback to engineers and designers for the fabrication of CdTe/CGS based solar cells.

Self-Catalyzed CdTe Wires.

PubMed

Baines, Tom; Papageorgiou, Giorgos; Hutter, Oliver S; Bowen, Leon; Durose, Ken; Major, Jonathan D

2018-04-25

CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111) oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

Superconductivity enhanced by Se doping in Eu3Bi2(S,Se)4F4

NASA Astrophysics Data System (ADS)

Zhang, P.; Zhai, H. F.; Tang, Z. J.; Li, L.; Li, Y. K.; Chen, Q.; Chen, J.; Wang, Z.; Feng, C. M.; Cao, G. H.; Xu, Z. A.

2015-07-01

We investigated the negative-chemical-pressure effect of Eu3Bi2S4-x Se x F4 (0 ≤ x ≤ 2.0) by the partial substitution of S with Se. The crystalline lattice substantially expands as Se is doped, suggesting an effective negative chemical pressure. With Se/S doping, the charge-density-wave-like anomaly is suppressed, and meanwhile the superconducting transition temperature (T_c) is enhanced. For x = 2.0 , T c reaches 3.35 K and bulk superconductivity is confirmed by the strong diamagnetic signal, with shielding volume fraction over 90%. Magnetic-susceptibility, specific-heat and Hall-effect measurements reveal that the Se/S doping increases the carrier density, corresponding to the increase of the average Eu valence. Our work provides a rare paradigm of negative-chemical-pressure effect.

Synthesis of Er(III)/Yb(III)-doped BiF3 upconversion nanoparticles for use in optical thermometry.

PubMed

Du, Peng; Yu, Jae Su

2018-03-23

The authors describe an ethylene glycol assisted precipitation method for synthesis of Er(III)/Yb(III)-doped BiF 3 nanoparticles (NPs) at room temperature. Under 980-nm light irradiation, the NPs emit upconversion (UC) emission of Er(III) ions as a result of a two-photon absorption process. The temperature-dependent green emissions (peaking at 525 and 545 nm) are used to establish an unambiguous relationship between the ratio of fluorescence intensities and temperature. The NPs have a maximum sensitivity of 6.5 × 10 -3  K -1 at 619 K and can be applied over the 291-691 K temperature range. The results indicate that these NPs are a promising candidate for optical thermometry. Graphical abstract Schematic of the room-temperature preparation of Er(III)/Yb(III)-doped BiF 3 nanoparticles with strongly temperature-dependent upconversion emission.

Thermoelectric and magnetic properties of Cr-doped single crystal Bi2Se3 - Search for energy filtering

NASA Astrophysics Data System (ADS)

Cermak, P.; Ruleova, P.; Holy, V.; Prokleska, J.; Kucek, V.; Palka, K.; Benes, L.; Drasar, C.

2018-02-01

Thermoelectric effects are one of the promising ways to utilize waste heat. Novel approaches have appeared in recent decades aiming to enhance thermoelectric conversion. The theory of energy filtering of free carriers by inclusions is among the latest developed methods. Although the basic idea is clear, experimental evidence of this phenomenon is rare. Based on this concept, we searched suitable systems with stable structures showing energy filtering. Here, we report on the anomalous behavior of Cr-doped single-crystal Bi2Se3 that indicates energy filtering. The solubility of chromium in Bi2Se3 was studied, which is the key parameter in the formation process of inclusions. We present recent results on the effect of Cr-doping on the transport coefficients on a wide set of single crystalline samples. Magnetic measurements were used to corroborate the conclusions drawn from the transport and X-ray measurements.

Effect of BiFeO3 doping on the structural, dielectric and electrical properties of CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Dai, Haiyang; Liu, Dewei; Chen, Jing; Xue, Renzhong; Li, Tao; Xiang, Huiwen; Chen, Zhenping; Liu, Haizeng

2015-04-01

(1 - x)CaCu3Ti4O12- xBiFeO3 ( x = 0, 0.003, 0.006, 0.010 and 0.015) ceramics have been fabricated by the solid-state reaction method. The effects of BiFeO3 (BFO) doping on the microstructure, dielectric and electrical properties of CaCu3Ti4O12 (CCTO) ceramics were investigated. It is found that BFO doping can affect the microstructure of the CCTO ceramics, and some properties of CCTO ceramics can hence be improved by BFO doping. The XRD and Raman results show that no phase transition has occurred in the doping content range, but BFO doping induces the crystal structure distortion. Analysis of microstructure indicates that the grain morphology varies significantly with increasing BFO content, and an appropriate amount of BFO can promote the grain growth. Impedance spectroscopy results show that the dielectric constant and loss of the BFO-doped CCTO samples are stable with frequency. The dielectric constant and nonohmic properties can be enhanced markedly in an appropriate doping content. The dielectric loss of all BFO-doped samples was lower than that of undoped CCTO sample in low frequencies. The related mechanism is also discussed in the paper.

Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect

NASA Astrophysics Data System (ADS)

Zhang, Zuocheng; Feng, Xiao; Wang, Jing; Lian, Biao; Zhang, Jinsong; Chang, Cuizu; Guo, Minghua; Ou, Yunbo; Feng, Yang; Zhang, Shou-Cheng; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Yayu

2017-10-01

The recent experimental observation of the quantum anomalous Hall effect has cast significant attention on magnetic topological insulators. In these magnetic counterparts of conventional topological insulators such as Bi2Te3, a long-range ferromagnetic state can be established by chemical doping with transition-metal elements. However, a much richer electronic phase diagram can emerge and, in the specific case of Cr-doped Bi2(SexTe1-x)3, a magnetic quantum phase transition tuned by the actual chemical composition has been reported. From an application-oriented perspective, the relevance of these results hinges on the possibility to manipulate magnetism and electronic band topology by external perturbations such as an electric field generated by gate electrodes—similar to what has been achieved in conventional diluted magnetic semiconductors. Here, we investigate the magneto-transport properties of Cr-doped Bi2(SexTe1-x)3 with different compositions under the effect of a gate voltage. The electric field has a negligible effect on magnetic order for all investigated compositions, with the remarkable exception of the sample close to the topological quantum critical point, where the gate voltage reversibly drives a ferromagnetic-to-paramagnetic phase transition. Theoretical calculations show that a perpendicular electric field causes a shift in the electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and, in turn, a magnetic phase transition.

Investigating the effect of Cd-Mn co-doped nano-sized BiFeO3 on its physical properties

NASA Astrophysics Data System (ADS)

Ishaq, B.; Murtaza, G.; Sharif, S.; Azhar Khan, M.; Akhtar, Naeem; Will, I. G.; Saleem, Murtaza; Ramay, Shahid M.

This work deals with the investigation of different effects on the structural, magnetic, electronic and dielectric properties of Cd and Mn doped Bi0.75Cd0.25Fe1-xMnxO3 multiferroic samples by taking fixed ratios of Cd and varying the Mn ratio with values of x = 0.0, 0.5, 0.10 and 0.15. Cd-Mn doped samples were synthesized chemically using a microemulsion method. All the samples were finally sintered at 700 °C for 2 h to obtain the single phase perovskites structure of BiFeO3 materials. The synthesized samples were characterized by different techniques, such as X-ray diffractometry (XRD), Scanning Electron Microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), LCR meter and magnetic properties using VSM. XRD results confirm BFO is a perovskite structure having crystallite size in the range of 24-54 nm. XRD results also reveal observed structural distortion due to doping of Cd at the A-site and Mn at the B-site of BFO. SEM results depict that, as the substitution of Cd-Mn increases in BFO, grain size decreases up to 30 nm. FTIR spectra showed prominent absorption bands at 555 cm-1 and 445 cm-1 corresponding to the stretching vibrations of the metal ions complexes at site A and site B, respectively. Variation of dielectric constant (ɛ‧) and loss tangent (tan δ) at room temperature in the range of 1 MHz to 3 GHz have been investigated. Results reveal that with Cd-Mn co doping a slight decrease in dielectric constant have been observed. Magnetic properties of Cd-Mn doped pure BFO samples have been studied at 300 K. Results reveal that undoped BiFeO3 exhibits weak ferromagnetic ordering due to the canting of its spin. Increase in magnetization and decrease in coercivity is a clear indication that a material can be used in high density recording media and memory devices.

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

The performance of CdTe solar cells can be very sensitive to their emitter/absorber interfaces, especially for high-efficiency cells with improved bulk properties. When interface defect states are located at efficient recombination energies, performance losses from acceptor-type interface defects can be significant. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e. defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV /= 0.4 eV), however, can impede electron transport and leadmore » to a reduction of photocurrent and fill-factor. In contrast to the spike, a 'cliff' (.delta..EC < 0 eV) is likely to allow many holes in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. In addition, a thin and highly-doped emitter can invert the absorber, form a large hole barrier, and decrease device performance losses due to high interface defect density. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. Other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ..delta..EC. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.« less

Study on superstructure in ion co-doped BiFeO3 by using transmission electron microscopy

NASA Astrophysics Data System (ADS)

Pu, Shi-Zhou; Guo, Chao; Li, Mei-Ya; Chen, Zhen-Lian; Zou, Hua-Min

2015-04-01

La3+ and V5+ co-doped BiFeO3 ceramics are synthesized by rapid liquid sintering technique. The modulated structure in Bi0.85La0.15Fe0.97V0.03O3 is investigated by using transmission electron microscopy (TEM). Two kinds of superstructures are observed in the samples. One is the component modulated superstructure and twin-domain, which is generated by La3+ ordered substitution for Bi3+ and frequently appears. The chemical composition of the superstructure is explored by x-ray energy dispersive spectroscopy (EDS). The model of the ordered structure is proposed. Simulation based on the model is conducted. The second is the fluorite-type δ-Bi2O3 related superstructure. The relation between the ferroelectric property and the microstructure of the sample is also discussed. Project supported by the National Natural Science Foundation of China (Grant Nos. 51372174, 11074193, and 51132001) and the Fundamental Research Funds for the Central Universities.

Effect of Substitutional Pb Doping on Bipolar and Lattice Thermal Conductivity in p-Type Bi0.48Sb1.52Te3

PubMed Central

Kim, Hyun-sik; Lee, Kyu Hyoung; Yoo, Joonyeon; Youn, Jehun; Roh, Jong Wook; Kim, Sang-il; Kim, Sung Wng

2017-01-01

Cation substitutional doping is an effective approach to modifying the electronic and thermal transports in Bi2Te3-based thermoelectric alloys. Here we present a comprehensive analysis of the electrical and thermal conductivities of polycrystalline Pb-doped p-type bulk Bi0.48Sb1.52Te3. Pb doping significantly increased the electrical conductivity up to ~2700 S/cm at x = 0.02 in Bi0.48-xPbxSb1.52Te3 due to the increase in hole carrier concentration. Even though the total thermal conductivity increased as Pb was added, due to the increased hole carrier concentration, the thermal conductivity was reduced by 14–22% if the contribution of the increased hole carrier concentration was excluded. To further understand the origin of reduction in the thermal conductivity, we first estimated the contribution of bipolar conduction to thermal conductivity from a two-parabolic band model, which is an extension of the single parabolic band model. Thereafter, the contribution of additional point defect scattering caused by Pb substitution (Pb in the cation site) was analyzed using the Debye–Callaway model. We found that Pb doping significantly suppressed both the bipolar thermal conduction and lattice thermal conductivity simultaneously, while the bipolar contribution to the total thermal conductivity reduction increased at high temperatures. At Pb doping of x = 0.02, the bipolar thermal conductivity decreased by ~30% from 0.47 W/mK to 0.33 W/mK at 480 K, which accounts for 70% of the total reduction. PMID:28773118

Influence of La doping on structural and dielectric properties of SrBi2Nb2O9 ceramics

NASA Astrophysics Data System (ADS)

Verma, Maya; Sreenivas, K.; Gupta, Vinay

2009-01-01

Lanthanum doped SrBi2Nb2O9 ceramics with the chemical formula SrBi2-xLaxNb2O9 (SBLN) (x =0-0.5) have been prepared through conventional solid state route. X-ray diffraction reveals the shrinkage of unit cell of strontium bismuth niobate with incorporation of La3+ dopant, having no lone pair electrons. Shifting of Raman phonon modes indicates the reduced rattling space of NbO6 octahedra with increase in La doping concentration. Further, the softening of lowest frequency phonon mode with increasing x in SBLN shows the transition from ferroelectric to paraelectric at room temperature. The dielectric properties for all the compositions are studied as a function of temperature (25 to 500 °C) over the frequency range of 10 kHz-1 MHz. With increase in lanthanum doping concentration the phase transition becomes diffused and transition temperature gets shifted toward lower temperature. A phase transition from normal ferroelectric to paraelectric has been observed via relaxor-type ferroelectrics with increase in x. The frequency dependence of transition temperature was studied in terms of Vogel-Fulcher relation for SBLN (x =0.4).

Local Magnetoelectric Effect in La-Doped BiFeO3 Multiferroic Thin Films Revealed by Magnetic-Field-Assisted Scanning Probe Microscopy

NASA Astrophysics Data System (ADS)

Pan, Dan-Feng; Zhou, Ming-Xiu; Lu, Zeng-Xing; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

2016-06-01

Multiferroic La-doped BiFeO3 thin films have been prepared by a sol-gel plus spin-coating process, and the local magnetoelectric coupling effect has been investigated by the magnetic-field-assisted scanning probe microscopy connected with a ferroelectric analyzer. The local ferroelectric polarization response to external magnetic fields is observed and a so-called optimized magnetic field of ~40 Oe is obtained, at which the ferroelectric polarization reaches the maximum. Moreover, we carry out the magnetic-field-dependent surface conductivity measurements and illustrate the origin of local magnetoresistance in the La-doped BiFeO3 thin films, which is closely related to the local ferroelectric polarization response to external magnetic fields. This work not only provides a useful technique to characterize the local magnetoelectric coupling for a wide range of multiferroic materials but also is significant for deeply understanding the local multiferroic behaviors in the BiFeO3-based systems.

Effect of Fe-site isovalent and aliovalent doping on the magnetic, electric and optical properties of BiFe0.875Cr0.125O3

NASA Astrophysics Data System (ADS)

Zhou, Yunhua; Zhang, Ren; Fan, Yingfang; Wang, Zhongchao; Mao, Weiwei; Zhang, Jian; Min, Yonggang; Yang, Jiangping; Pu, Yong; Li, Xing'ao

2018-02-01

The magnetic, electric and optical properties of BiFe0.875Cr0.125O3 (BFCO) doped with aliovalent ions (Na+, Mg2+) and isovalent ion (Al3+) are investigated by the first principle spin-polarized density functional theory calculations. It is demonstrated that the substitution of M (M = Na+, Mg2+, Al3+) for Fe can produce net magnetic moments of 3.0, 2.0 and 3.0 μB, respectively. Besides, Na+ doped BFCO exhibits metallicity while Mg2+ doped system behaves as half-metallicity. Systematic study of electronic structures show that this conversion from semiconductor (BFCO) to half-metal or metal is mainly attributed to the shifting of O 2p, Bi 6s, and Cr 3d states induced by doping with aliovalent Na+ or Mg2+. Furthermore, the aliovalent ions doped samples express high static dielectric constants of 12.08, 29.44, large refractive indexs of 5.41, 3.46 and both their absorption edges near zero, suggesting advanced optical response in visible region of the doped samples.

The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru; Kudryashov, A. A.; Kytin, V. G.

2015-06-15

The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, and 0.05) and n-Bi{sub 2−x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in Sb{sub 2−x}Tl{sub x}Te{sub 3} due to the donor effect of Tl and the electron concentration in n-Bi{sub 2−x}Tl{sub x}Se{sub 3} decreases due to the acceptor effect of Tl. Themore » temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77–300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} and in n-Bi{sub 2−x}Tl{sub x}Se{sub 3}. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.« less

Surface passivation for CdTe devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reese, Matthew O.; Perkins, Craig L.; Burst, James M.

2017-08-01

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Facile one-pot synthesis of visible light-responsive BiPO4/nitrogen doped graphene hydrogel for fabricating label-free photoelectrochemical tetracycline aptasensor.

PubMed

Ge, Lan; Li, Henan; Du, Xiaojiao; Zhu, Mingyue; Chen, Wei; Shi, Tingyan; Hao, Nan; Liu, Qian; Wang, Kun

2018-07-15

It is fundamental to develop highly efficient visible light-responsive photoelectrochemical (PEC) performance material for fabricating PEC biosensor. Herein, BiPO 4 /three-dimensional nitrogen doped graphene hydrogel (3DNGH) nanocomposites were prepared for the first time via a facile one-pot hydrothermal route. In this nanoarchitecture, the BiPO 4 nanorods were anchored onto the porous structure of 3DNGH. Compared with pristine BiPO 4 , the absorption of BiPO 4 /3DNGH has been extend to visible-light region, and the energy band gap of BiPO 4 /3DNGH was calculated to be 2.10 eV, which was greatly narrower than that of pristine BiPO 4 with a band gap of 3.85 eV. Under visible light irradiation, the photocurrent signal of the as-prepared BiPO 4 /3DNGH was 847.2-fold, 4.1-fold and 2.3-fold enhanced comparing to pristine BiPO 4 , BiPO 4 functionalized reduced graphene oxide and BiPO 4 /nitrogen doped graphene. The enhancement of such photocurrent signal was attributed to the introduction of 3DNGH, which was capable to improve the charge transfer rate and also the efficiency of visible-light utilization of BiPO 4 . Based on the excellent PEC properties of BiPO 4 /3DNGH, a label-free PEC aptasensor for selectivity and sensitivity detection of tetracycline (Tc) was successfully established by using Tc aptamer as a biorecognition element. Under optimized conditions, the proposed PEC aptasensor exhibited a wide linear in the range from 0.1 nmol L -1 to 1 μmol L -1 as well as a low detection limit of 0.033 nmol L -1 (S/N = 3). The prepared BiPO 4 /3DNGH nanocomposites would serve as a promising visible light-responsive photoactive material for fabrication of PEC biosensors with high performance. Copyright © 2018 Elsevier B.V. All rights reserved.

Growth and properties of oxygen- and ion-doped Bi2Sr2CaCu2O8+δ single crystals

NASA Astrophysics Data System (ADS)

Mitzi, D. B.; Lombardo, L. W.; Kapitulnik, A.; Laderman, S. S.; Jacowitz, R. D.

1990-04-01

A directional solidification method for growing large single crystals in the Bi2Sr2CaCu2O8+δ system is reported. Ion doping, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Doped and undoped crystals have been characterized using microprobe analysis, x-ray diffraction, thermogravimetric analysis, and magnetic and Hall measurements. Ion doping results in little change of the superconducting transition for substitution levels below 20-25%, while beyond this level the Meissner signal broadens and the low-temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals provide evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90 (as made) to 77 K (oxygen pressure annealed), while the carrier concentrations, as determined from Hall effect measurements, increase from n=3.1(3)×1021 cm-3 (0.34 holes per Cu site) to 4.6(3)×1021 cm-3 (0.50 holes per Cu site). No degradation of the Meissner transition or other indications of inhomogeneity or phase segregation with doping are noted, suggesting that oxygen-doped Bi2Sr2CaCu2O8+δ is a suitable system for pursuing doping studies. The decrease in Tc with concentration for 0.34<=n<=0.50 indicates that a high-carrier-concentration regime exists in which Tc decreases with n and suggests that this decrease does not arise from material inhomogeneity or other materials problems. An examination of the variation of Tc with the density of states and lattice constants for all of the doped and undoped superconducting samples considered here indicates that changes in Tc with doping are primarily affected by changes in the density of states (or carrier concentration) rather than by structural variation induced by the doping.

In-situ synthesis of nanofibers with various ratios of BiOClx/BiOBry/BiOIz for effective trichloroethylene photocatalytic degradation

NASA Astrophysics Data System (ADS)

Zhang, Yifan; Park, Mira; Kim, Hak Yong; Ding, Bin; Park, Soo-Jin

2016-10-01

In this work, BiOClx/BiOBry/BiOIz (x + y + z = 1) composite nanofibers were prepared through electrospinning and the sol-gel methods. Photocatalytic degradation of trichloroethylene (TCE) by BiOClx/BiOBry/BiOIz/PAN nanofibers was systematically investigated via gas chromatography (GC). Optimum photocatalytic activity was achieved with BiOCl0.3/BiOBr0.3/BiOI0.4 fibers under solar light irradiation. X-ray photoelectron spectroscopy (XPS) peaks due to Csbnd O and Cdbnd O were observed at 286.0 and 288.3 eV, respectively, it indicated that the BiOClx/BiOBry/BiOIz mixture had been successfully doped on the polyacrylonitrile (PAN) fibers. Furthermore, X-ray diffraction (XRD) results also confirmed that we had synthesized the as-prepared composite nanofibers successfully. Photocatalytic activities of BiOCl0.3/BiOBr0.3/BiOI0.4 were up to 3 times higher than the pure BiOCl, BiOBr and BiOI samples, respectively.

Influence of Co doping on structural, optical and magnetic properties of BiFeO3 films deposited on quartz substrates by sol-gel method

NASA Astrophysics Data System (ADS)

Peng, Lin; Deng, Hongmei; Tian, Jianjun; Ren, Qing; Peng, Cheng; Huang, Zhipeng; Yang, Pingxiong; Chu, Junhao

2013-03-01

Multiferroic BiFe1-xCoxO3 (x = 0, 0.03, 0.05, 0.1) thin films have been prepared on quartz substrates using a sol-gel technique. X-ray diffraction data confirms that Co atoms have been successfully incorporated into the host lattice. The scanning electron microscopy (SEM) exhibits that the surface morphologies of BiFe0.97Co0.03O3 and BiFe0.95Co0.05O3 thin films become more compact and uniform. With increasing Co dopant, the position of A1-1 and E-4 modes shift towards the lower wavenumber indicates that Co doping induces structural distortion of BiFeO3. With increasing Co composition, the fundamental absorption edges of BiFe1-xCoxO3 films show red shift. Furthermore, transmittance spectra demonstrates that the optical band gap of BiFe1-xCoxO3 films decreases from 2.66 eV to 2.53 eV with the increase of Co from x = 0 to 0.1. At the wavelength of 720 nm, the refractive index decreases and the extinction coefficient increases with increasing the amount of Co. Optical properties reveal that Co doping in BiFeO3 provides preliminary research for optoelectronic devices and infrared detectors. Compared with BiFeO3 prepared under similar conditions, the remanent magnetization Mr of BiFe1-xCoxO3 (x = 0.03, 0.05, 0.1) thin films significantly enhanced, which provides potential applications in information storage.

Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

PubMed

Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

2013-05-22

Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

Polar-antipolar transition and weak ferromagnetism in Mn-doped Bi0.86La0.14FeO3

NASA Astrophysics Data System (ADS)

Khomchenko, V. A.; Karpinsky, D. V.; Troyanchuk, I. O.; Sikolenko, V. V.; Többens, D. M.; Ivanov, M. S.; Silibin, M. V.; Rai, R.; Paixão, J. A.

2018-04-01

Having been considered as a prime example of a room-temperature magnetoelectric multiferroic, BiFeO3 continues to attract much interest. Since functional properties of this material can be effectively influenced by chemical, electrical, magnetic, mechanical and thermal stimuli, it can serve as a model for the investigation of cross-coupling phenomena in solids. Special attention is currently paid to the study of chemical pressure-driven magneto-structural transformations. In this paper, we report on the effect of the Mn doping on the crystal structure and magnetic behavior of the Bi1‑x La x FeO3 multiferroics near their polar-antipolar (antiferromagnetic-weak ferromagnetic) phase boundary. Synchrotron x-ray and neutron powder diffraction measurements of the Bi0.86La0.14Fe1‑x Mn x O3 (x  =  0.05, 0.1, 0.15) compounds have been performed. The diffraction data suggest that the Mn substitution results in the suppression of the ferroelectric polarization and gives rise to the appearance of the antiferroelectric (generally, PbZrO3-related) phase characteristic of the phase diagrams of the Bi1‑x RE x FeO3 (RE  =  rare-earth) systems. Depending on the Mn concentration (determining phase composition of the Bi0.86La0.14Fe1‑x Mn x O3 samples at room temperature), either complete or partial revival of the polar phase can be observed with increasing temperature. Magnetic measurements of the samples indicate that the Mn doping affects the stability of the cycloidal antiferromagnetic order specific to the polar phase, thus resulting in the formation of a ferroelectric and weak ferromagnetic state.

Improved ferroelectric polarization of V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films prepared by a chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, D. P.; University of Science and Technology of China, Hefei 230026; Yang, J., E-mail: jyang@issp.ac.cn

We prepared V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films on Pt/Ti/SiO{sub 2}/Si (100) substrates by using a chemical solution deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films. The Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2P{sub r}) over 30 μC/cm{sup 2} in Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film compared with 10 μC/cm{sup 2} in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin film. It ismore » demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films by chemical solution deposition, which is important to further explore single-phase multiferroics in the n = 5 Aurivillius thin films.« less

Antimony diffusion in CdTe

DOE PAGES

Colegrove, Eric; Harvey, Steven P.; Yang, Ji -Hui; ...

2017-02-08

Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. Lastly, the theory and experimental results create new understanding of group V defect kinetics in CdTe.

Thermoelectric transport properties of BaBiTe{sub 3}-based materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yiming; Zhao, Li-Dong, E-mail: zhaolidong@buaa.edu.cn

BaBiTe{sub 3}, a material with low thermal conductivity, is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. We choose two types of dopants, K and La, trying to optimize its electrical transport properties. The minority carriers, which harm the Seebeck coefficient in this system, are suppressed by La doping. With the increase of both electrical conductivity and Seebeck coefficient, the power factor of 3% La doped BaBiTe{sub 3} reaches 3.7 μW cm{sup −1} K{sup −2} which increased by 40% from undoped BaBiTe{sub 3}. Besides high power factor, the thermal conductivity is alsomore » reduced in it. Eventually, a high ZT value, 0.25 at 473 K, for n-type BaBiTe{sub 3} is achieved in 3% La doped BaBiTe{sub 3}. - Graphical abstract: BaBiTe{sub 3} possesses a low thermal conductivity. However, it is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. A high ZT value of 0.25 at 473 K for n-type BaBiTe{sub 3} can be achieved through optimizing electrical transport properties via La doping. - Highlights: • BaBiTe{sub 3} is an analogue of these promising thermoelectric materials: such as CsBi{sub 4}Te{sub 6} and K{sub 2}Bi{sub 8}Se{sub 13}, etc. • BaBiTe{sub 3} possesses a low thermal conductivity. • La is an effective dopant to enhance electrical transport properties. • A high ZT value of 0.25 at 473 K can be achieved in n-type La-doped BaBiTe{sub 3}.« less

Exploiting nonlinear properties of pure and Sn-doped Bi2Te2Se for passive Q-switching of all-polarization maintaining ytterbium- and erbium-doped fiber lasers.

PubMed

Bogusławski, Jakub; Kowalczyk, Maciej; Iwanowski, Przemysław; Hruban, Andrzej; Diduszko, Ryszard; Piotrowski, Kazimierz; Dybko, Krzysztof; Wojciechowski, Tomasz; Aleszkiewicz, Marta; Sotor, Jarosław

2017-08-07

Due to their broadband nonlinear optical properties, low-dimensional materials are widely used for pulse generation in fiber and solid-state lasers. Here we demonstrate novel materials, Bi 2 Te 2 Se (BTS) and Sn-doped Bi 2 Te 2 Se (BSTS), which can be used as a universal saturable absorbers for distinct spectral regimes. The material was mechanically exfoliated from a bulk single-crystal and deposited onto a side-polished fiber. We have performed characterization of the fabricated devices and employed them in polarization-maintaining ytterbium- and erbium-doped fiber lasers. This enabled us to obtain self-starting passively Q-switched regime at 1 µm and 1.56 µm. The oscillators emitted stable, linearly polarized radiation with the highest single pulse energy approaching 692 nJ. Both lasers are characterized by the best performance observed in all-polarization maintaining Q-switched fiber lasers with recently investigated new saturable absorbers, which was enabled by a very high damage threshold of the devices. This demonstrates the great potential of the investigated materials for the ultrafast photonics community.

Thermoelectric Properties of Cu-doped Bi2-xSbxTe3 Prepared by Encapsulated Melting and Hot Pressing

NASA Astrophysics Data System (ADS)

Jung, Woo-Jin; Kim, Il-Ho

2018-03-01

P-type Bi2-xSbxTe3:Cum (x = 1.5-1.7 and m = 0.002-0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZTmax = 1.25, was achieved at 373 K for Bi0.4Sb1.6Te3:Cu0.003.

Undoped and Ni-doped CoO x surface modification of porous BiVO 4 photoelectrodes for water oxidation

DOE PAGES

Liu, Ya; Guo, Youhong; Schelhas, Laura T.; ...

2016-09-29

Surface modification of photoanodes with oxygen evolution reaction (OER) catalysts is an effective approach to enhance water oxidation kinetics, to reduce external bias, and to improve the energy harvesting efficiency of photoelectrochemical (PEC) water oxidation. Here, the surface of porous BiVO 4 photoanodes was modified by the deposition of undoped and Ni-doped CoO x via nitrogen flow assisted electrostatic spray pyrolysis. This newly developed atmospheric pressure deposition technique allows for surface coverage throughout the porous structure with thickness and composition control. PEC testing of modified BiVO 4 photoanodes shows that after deposition of an undoped CoO x surface layer, themore » onset potential shifts negatively by ca. 420 mV and the photocurrent density reaches 2.01 mA cm –2 at 1.23 vs V RHE under AM 1.5G illumination. Modification with Ni-doped CoO x produces even more effective OER catalysis and yields a photocurrent density of 2.62 mA cm –2 at 1.23 V RHE under AM 1.5G illumination. Furthermore, the valence band X-ray photoelectron spectroscopy and synchrotron-based X-ray absorption spectroscopy results show the Ni doping reduces the Fermi level of the CoO x layer; the increased surface band bending produced by this effect is partially responsible for the superior PEC performance.« less

Effect of thallium doping on the mobility of electrons in Bi{sub 2}Se{sub 3} and holes in Sb{sub 2}Te{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kudryashov, A. A.; Kytin, V. G.; Lunin, R. A.

2016-07-15

The Shubnikov–de Haas effect and the Hall effect in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04) and p-Sb{sub 2–x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, 0.05) single crystals are studied. The carrier mobilities and their changes upon Tl doping are calculated by the Fourier spectra of oscillations. It is found shown that Tl doping decreases the electron concentration in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} and increases the electron mobility. In p-Sb{sub 2–x}Tl{sub x}Te{sub 3}, both the hole concentration and mobility decrease upon Tl doping. The change in the crystal defect concentration, which leads to these effects, ismore » discussed.« less

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb) 2Te 3 film

DOE PAGES

Li, W.; Claassen, M.; Chang, Cui -Zu; ...

2016-09-07

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb) 2Te 3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb) 2Te 3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Diracmore » point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.« less

Influence of B4C-doping and high-energy ball milling on phase formation and critical current density of (Bi,Pb)-2223 HTS

NASA Astrophysics Data System (ADS)

Margiani, N. G.; Mumladze, G. A.; Adamia, Z. A.; Kuzanyan, A. S.; Zhghamadze, V. V.

2018-05-01

In this paper, the combined effects of B4C-doping and planetary ball milling on the phase evolution, microstructure and transport properties of Bi1.7Pb0.3Sr2Ca2Cu3Oy(B4C)x HTS with x = 0 ÷ 0.125 were studied through X-ray diffraction (XRD), scanning electron microscopy (SEM), resistivity and critical current density measurements. Obtained results have shown that B4C additive leads to the strong acceleration of high-Tc phase formation and substantial enhancement in Jc. High-energy ball milling seems to produce a more homogeneous distribution of refined doped particles in the (Bi,Pb)-2223 HTS which results in an improved intergranular flux pinning and better self-field Jc performance.

Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi2Se3

NASA Astrophysics Data System (ADS)

Yilmaz, Turgut; Hines, William; Sun, Fu-Chang; Pletikosić, Ivo; Budnick, Joseph; Valla, Tonica; Sinkovic, Boris

2017-06-01

In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment. Angle resolved photoemission spectroscopy (ARPES) shows that Cr doped into the bulk opens a surface state energy gap which can be seen at room temperature; much higher than the measured ferromagnetic transition temperature of ≈10 K. On the other hand, similar ARPES measurements show that the surface states remain gapless down to 15 K for films with Cr surface deposition. In addition, core-level photoemission spectroscopy of the Bi 5d, Se 3d, and Cr 3p core levels show distinct differences in the chemical environment for the two methods of Cr introduction. Surface deposition of Cr results in the formation of shoulders on the lower binding energy side for the Bi 5d peaks and two distinct Cr 3p peaks indicative of two Cr sites. These striking differences suggests an interesting possibility that better control of doping at only near surface region may offer a path to quantum anomalous Hall states at higher temperatures than reported in the literature.

Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi 2 Se 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yilmaz, Turgut; Hines, William; Sun, Fu-Chang

In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment. Angle resolved photoemission spectroscopy (ARPES) shows that Cr doped into the bulk opens a surface state energy gap which can be seen at room temperature; much higher than the measured ferromagnetic transition temperature of ≈ 10 K. On the other hand, similar ARPES measurements show that the surface states remain gapless down to 15 K for films with Cr surface deposition.more » In addition, core-level photoemission spectroscopy of the Bi 5d, Se 3d, and Cr 3p core levels show distinct differences in the chemical environment for the two methods of Cr introduction. Surface deposition of Cr results in the formation of shoulders on the lower binding energy side for the Bi 5d peaks and two distinct Cr 3p peaks indicative of two Cr sites. These striking differences suggests an interesting possibility that better control of doping at only near surface region may offer a path to quantum anomalous Hall states at higher temperatures than reported in the literature.« less

Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi 2 Se 3

DOE PAGES

Yilmaz, Turgut; Hines, William; Sun, Fu-Chang; ...

2017-02-21

In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment. Angle resolved photoemission spectroscopy (ARPES) shows that Cr doped into the bulk opens a surface state energy gap which can be seen at room temperature; much higher than the measured ferromagnetic transition temperature of ≈ 10 K. On the other hand, similar ARPES measurements show that the surface states remain gapless down to 15 K for films with Cr surface deposition.more » In addition, core-level photoemission spectroscopy of the Bi 5d, Se 3d, and Cr 3p core levels show distinct differences in the chemical environment for the two methods of Cr introduction. Surface deposition of Cr results in the formation of shoulders on the lower binding energy side for the Bi 5d peaks and two distinct Cr 3p peaks indicative of two Cr sites. These striking differences suggests an interesting possibility that better control of doping at only near surface region may offer a path to quantum anomalous Hall states at higher temperatures than reported in the literature.« less

Leakage current phenomena in Mn-doped Bi(Na,K)TiO{sub 3}-based ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walenza-Slabe, J.; Gibbons, B. J., E-mail: brady.gibbons@oregonstate.edu

2016-08-28

Mn-doped 80(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-20(Bi{sub 0.5}K{sub 0.5})TiO{sub 3} thin films were fabricated by chemical solution deposition on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, theremore » were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ{sub ion} ≈ 1.7 × 10{sup −12} cm{sup 2} V{sup −1} s{sup −1} and E{sub A,ion} ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.« less

Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory.

PubMed

Murata, Koichi; Kirkham, Christopher; Shimomura, Masaru; Nitta, Kiyofumi; Uruga, Tomoya; Terada, Yasuko; Nittoh, Koh-Ichi; Bowler, David R; Miki, Kazushi

2017-04-20

We successfully characterized the local structures of Bi atoms in a wire-δ-doped layer (1/8 ML) in a Si crystal, using wavelength dispersive fluorescence x-ray absorption fine structure at the beamline BL37XU, in SPring-8, with the help of density functional theory calculations. It was found that the burial of Bi nanolines on the Si(0 0 1) surface, via growth of Si capping layer at 400 °C by molecular beam epitaxy, reduced the Bi-Si bond length from [Formula: see text] to [Formula: see text] Å. We infer that following epitaxial growth the Bi-Bi dimers of the nanoline are broken, and the Bi atoms are located at substitutional sites within the Si crystal, leading to the shorter Bi-Si bond lengths.

Electrical and Optical Characteristics of Undoped and Se-Doped Bi2S3 Transistors

NASA Astrophysics Data System (ADS)

Kilcoyne, Colin; Alsaqqa, Ali; Rahman, Ajara A.; Whittaker-Brooks, Luisa; Sambandamurthy, G.

Semiconducting chalcogenides have been drawing increased attention due to their interesting physical properties, especially in low dimensional structures. Bi2S3 has demonstrated a high optical absorption coefficient, a large bulk mobility, small bandgap, high Seebeck coefficient, and low thermal conductivity. These properties make it a good candidate for optical, electric and thermoelectric applications. However, control over the electrical properties for enhanced thermoelectric performance and optical applications is desired. We present electrical transport and optical properties from individual nanowire and few-layer transistors of single crystalline undoped and Se-doped Bi2S3-xSex. All devices exhibit n-type semiconducting behavior and the ON/OFF ratio, mobility, and conductivity noise behavior are studied as functions of dopant concentration, temperature, and charge carrier density in different conduction regimes. The roles of dopant driven scattering mechanisms and mobility/carrier density fluctuations will be discussed. The potential for this series of materials as optical and electrical switches will be presented. NSF DMR.

Enhancement emission intensity of CaMoO4 : Eu3+, Na+ phosphor via Bi co-doping and Si substitution for application to white LEDs

NASA Astrophysics Data System (ADS)

Xie, An; Yuan, Ximing; Hai, Shujie; Wang, Juanjuan; Wang, Fengxiang; Li, Liu

2009-05-01

Through the use of Bi as a co-activator and Si as a substituting element for the host lattice, red emitting Ca_{0.5}MoO_4\\,:\\,Eu^{3+}_{0.25-x} , Bi^{3+}_{x} , Na^{+}_{0.25} (x = 0, 0.005, 0.01, 0.05, 0.10, 0.15 and 0.20) and Ca_{0.5}Mo_{1-y}Si_yO_4\\,:\\,Eu^{3+}_{0.25} , Na^{+}_{0.25} (y = 0.005, 0.01, 0.02, 0.03, 0.04 and 0.05) phosphors were synthesized by the conventional solid state reaction method, respectively. The photo-luminescent results show all samples can be excited efficiently by UV (396 nm) and blue (467 nm) light and emit red light at 615 nm with line spectra, which are coupled well with the characteristic emission from UVLED and blue LED, respectively. In the Eu3+-Bi3+ co-doped system, both Eu3+ f-f transition and Bi3+ CT transition absorptions are observed in the excitation spectra, the intensities of the main emission line (5D0 → 7F2 transition of Eu3+ at 615 nm) are strengthened because of the energy transition from Bi3+ to Eu3+. The introduction of Si4+ ions did not change the position of the peaks but enhanced the emission intensity of Eu3+ under 396 nm excitations. The results showed that the optimal doping concentration of Bi3+ ions and Si4+ ions was 1 mol%, respectively.

Study of magnetism in Cr doped (Bi1-xSbx)2Te3

NASA Astrophysics Data System (ADS)

Richardella, Anthony; Kandala, Abhinav; Kempinger, Susan; Samarth, Nitin; Grutter, Alex; Borchers, Julie

2015-03-01

The quantum anomalous Hall (QAH) effect was first observed in Cr doped films of the topological insulator (TI) (Bi1-xSbx)2Te3. This ferromagnetic TI opens a gap at the Dirac point and, when the Fermi energy lies inside this gap, a quantized QAH conductance can be observed. The origin of ferromagnetism in this material is still not well understood with the mechanism typically attributed to either a high van-Vleck susceptibility or a carrier mediated RKKY like interaction. To elucidate this we have studied Cry(Bi1-xSbx)2-yTe3 thin films grown by MBE on SrTiO3 (STO) substrates using polarized neutron reflectivity (PNR) while in-situ backgating the film to change the position of the Fermi energy. The films are also characterized by XRD, AFM, TEM and low temperature transport measurements. PNR measurements provide a direct measure of the depth dependent magnetization of a sample. We use this to study how the magnetization changes as the Fermi energy is moved towards the Dirac point. Funded by DARPA and ARO-MURI.

Effect of Substitutional Pb Doping on Bipolar and Lattice Thermal Conductivity in p-Type Bi0.48Sb1.52Te₃.

PubMed

Kim, Hyun-Sik; Lee, Kyu Hyoung; Yoo, Joonyeon; Youn, Jehun; Roh, Jong Wook; Kim, Sang-Il; Kim, Sung Wng

2017-07-06

Cation substitutional doping is an effective approach to modifying the electronic and thermal transports in Bi₂Te₃-based thermoelectric alloys. Here we present a comprehensive analysis of the electrical and thermal conductivities of polycrystalline Pb-doped p-type bulk Bi 0.48 Sb 1.52 Te₃. Pb doping significantly increased the electrical conductivity up to ~2700 S/cm at x = 0.02 in Bi 0.48-x Pb x Sb 1.52 Te₃ due to the increase in hole carrier concentration. Even though the total thermal conductivity increased as Pb was added, due to the increased hole carrier concentration, the thermal conductivity was reduced by 14-22% if the contribution of the increased hole carrier concentration was excluded. To further understand the origin of reduction in the thermal conductivity, we first estimated the contribution of bipolar conduction to thermal conductivity from a two-parabolic band model, which is an extension of the single parabolic band model. Thereafter, the contribution of additional point defect scattering caused by Pb substitution (Pb in the cation site) was analyzed using the Debye-Callaway model. We found that Pb doping significantly suppressed both the bipolar thermal conduction and lattice thermal conductivity simultaneously, while the bipolar contribution to the total thermal conductivity reduction increased at high temperatures. At Pb doping of x = 0.02, the bipolar thermal conductivity decreased by ~30% from 0.47 W/mK to 0.33 W/mK at 480 K, which accounts for 70% of the total reduction.

Synthesis, thermal and electrical properties of Al-doped Bi{sub 4}V{sub 1.8}Cu{sub 0.2}O{sub 10.7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essalim, R.; Ammar, A.; Tanouti, B.

2016-08-15

Partial substitution of copper with aluminum in Bi{sub 4}V{sub 1.8}Cu{sub 0.2}O{sub 10.7} has led to the Bi{sub 4}V{sub 1.8}Cu{sub 0.2−x}Al{sub x}O{sub 10.7+x/2} solid solution. X-ray diffraction and thermal analysis have shown that the compounds with x=0.05 and x=0.10 are tetragonal with γ′ form of Bi{sub 4}V{sub 2}O{sub 11}, while the compound with x=0.15 is of β polymorph. The effect of Al{sup 3+} doping on electrical conductivity has been studied using Electrochemical Impedance Spectroscopy. The electrical conductivity of doped samples along with the amount of Al{sup 3+} has been studied by electrochemical impedance spectroscopy in the temperature range 250–700 °C. Themore » slope changes observed in the Arrhenius plots agree with the microstructural transitions occurring in these compounds. The highest ionic conductivity values are obtained for the sample with x=0.05. - Graphical abstract: Arrhenius plots of the electrical conductivity of the of Bi{sub 4}V{sub 1.8}Cu{sub 0.2−x}Al{sub x}O{sub 10.7+x/2} compounds. Display Omitted.« less

Theoretical study of ZnS/CdS bi-layer for thin-film CdTe solar cell

NASA Astrophysics Data System (ADS)

Mohamed, H. A.; Mohamed, A. S.; Ali, H. M.

2018-05-01

The performance of CdTe solar cells is strongly limited by the thickness of CdS window layer. A higher short-circuit current density might be achieved by decreasing the thickness of CdS layer as a result of reducing the absorption losses that take place in this layer. However, it is difficult to obtain uniform and pin-hole free CdS layers thinner than 50 nm. This problem can be solved through increasing the band gap of the window layer by adding a wide band gap semiconductor such as ZnS. In this work, bi-layer ZnS/CdS film was studied as an improved window layer of ITO/ZnS/CdS/CdTe solar cell. The total thickness of ZnS/CdS layer was taken about 60 nm. The effect of optical losses due to reflection at different interfaces in the cell and absorption in ITO, ZnS, CdS as well as the recombination loss have been studied. Finally, the effects of the recombination losses in the space-charge region and the reflectivity from the back contact were taken into accounts. The results revealed that the optical losses of 23% were achieved at 60 nm thickness of CdS and theses losses minimized to 18% when ZnS layer of 30 nm thickness was added to CdS layer. The minimum optical and recombination losses of about 26% were obtained at 1 ns of electron life-time and ∼0.4 μm width of the space-charge region. The maximum efficiency of 18.5% was achieved for ITO/CdS/CdTe cell and the efficiency increased up to 20% for ITO/ZnS/CdS/CdTe cell.

Study of structural, electronic and optical properties of tungsten doped bismuth oxychloride by DFT calculations.

PubMed

Yang, Wenjuan; Wen, Yanwei; Chen, Rong; Zeng, Dawen; Shan, Bin

2014-10-21

First-principle calculations have been carried out to investigate structural stabilities, electronic structures and optical properties of tungsten doped bismuth oxychloride (BiOCl). The structures of substitutional and interstitial tungsten, and in the form of WO6-ligand-doped BiOCl are examined. The substitutional and interstitial tungsten doping leads to discrete midgap states within the forbidden band gap, which has an adverse effect on the photocatalytic properties. On the other hand, the WO6-ligand-doped BiOCl structure induces a continuum of hybridized states in the forbidden gap, which favors transport of electrons and holes and could result in enhancement of visible light activity. In addition, the band gap of WO6-BiOCl decreases by 0.25 eV with valence band maximum (VBM) shifting upwards compared to that of pure BiOCl. By calculating optical absorption spectra of pure BiOCl and WO6-ligand-doped BiOCl structure, it is found that the absorption peak of the WO6-ligand-doped BiOCl structure has a red shift towards visible light compared with that of pure BiOCl, which agrees well with experimental observations. These results reveal the tungsten doped BiOCl system as a promising material in photocatalytic decomposition of organics and water splitting under sunlight irradiation.

Structural and chemical evolution of the CdS:O window layer during individual CdTe solar cell processing steps

DOE PAGES

Abbas, A.; Meysing, D. M.; Reese, M. O.; ...

2017-12-01

Oxygenated cadmium sulfide (CdS:O) is often used as the n-type window layer in high-performance CdTe heterojunction solar cells. The as-deposited layer prepared by reactive sputtering is XRD amorphous, with a bulk composition of CdS0.8O1.2. Recently it was shown that this layer undergoes significant transformation during device fabrication, but the roles of the individual high temperature processing steps was unclear. In this work high resolution transmission electron microscopy coupled to elemental analysis was used to understand the evolution of the heterojunction region through the individual high temperature fabrication steps of CdTe deposition, CdCl2 activation, and back contact activation. It is foundmore » that during CdTe deposition by close spaced sublimation at 600 degrees C the CdS:O film undergoes recrystallization, accompanied by a significant (~30%) reduction in thickness. It is observed that oxygen segregates during this step, forming a bi-layer morphology consisting of nanocrystalline CdS adjacent to the tin oxide contact and an oxygen-rich layer adjacent to the CdTe absorber. This bilayer structure is then lost during the 400 degrees C CdCl2 treatment where the film transforms into a heterogeneous structure with cadmium sulfate clusters distributed randomly throughout the window layer. The thickness of window layer remains essentially unchanged after CdCl2 treatment, but a ~25 nm graded interfacial layer between CdTe and the window region is formed. Finally, the rapid thermal processing step used to activate the back contact was found to have a negligible impact on the structure or composition of the heterojunction region.« less

Structural and chemical evolution of the CdS:O window layer during individual CdTe solar cell processing steps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abbas, A.; Meysing, D. M.; Reese, M. O.

Oxygenated cadmium sulfide (CdS:O) is often used as the n-type window layer in high-performance CdTe heterojunction solar cells. The as-deposited layer prepared by reactive sputtering is XRD amorphous, with a bulk composition of CdS0.8O1.2. Recently it was shown that this layer undergoes significant transformation during device fabrication, but the roles of the individual high temperature processing steps was unclear. In this work high resolution transmission electron microscopy coupled to elemental analysis was used to understand the evolution of the heterojunction region through the individual high temperature fabrication steps of CdTe deposition, CdCl2 activation, and back contact activation. It is foundmore » that during CdTe deposition by close spaced sublimation at 600 degrees C the CdS:O film undergoes recrystallization, accompanied by a significant (~30%) reduction in thickness. It is observed that oxygen segregates during this step, forming a bi-layer morphology consisting of nanocrystalline CdS adjacent to the tin oxide contact and an oxygen-rich layer adjacent to the CdTe absorber. This bilayer structure is then lost during the 400 degrees C CdCl2 treatment where the film transforms into a heterogeneous structure with cadmium sulfate clusters distributed randomly throughout the window layer. The thickness of window layer remains essentially unchanged after CdCl2 treatment, but a ~25 nm graded interfacial layer between CdTe and the window region is formed. Finally, the rapid thermal processing step used to activate the back contact was found to have a negligible impact on the structure or composition of the heterojunction region.« less

First results of a highly granulated 3D CdTe detector module for PET

NASA Astrophysics Data System (ADS)

Chmeissani, Mokhtar; Kolstein, Machiel; Macias-Montero, José Gabriel; Puigdengoles, Carles; García, Jorge; Prats, Xavier; Martínez, Ricardo

2018-01-01

We present the performance of a highly granulated 3D detector module for PET, consisting of a stack of pixelated CdTe detectors. Each detector module has 2 cm  ×  2 cm  ×  2 cm of CdTe material, subdivided into 4000 voxels, where each voxel has size 1 mm  ×  1 mm  ×  2 mm and is connected to its own read-out electronics via a BiSn solder ball. Each read-out channel consists of a preamp, a discriminator, a shaper, a peak-and-hold circuit and a 10 bits SAR ADC. The preamp has variable gain where at the maximum gain the ADC resolution is equivalent to 0.7 keV. Each ASIC chip reads 100 CdTe pixel channels and has one TDC to measure the time stamp of the triggered events, with a time resolution of less than 1 ns. With the bias voltage set at  -250 V mm-1 and for 17838 working channels out of a total of 20 000, we have obtained an average energy resolution of 2.2% FWHM for 511 keV photons. For 511 keV photons that have undergone Compton scattering, we measured an energy resolution of 3.2% FWHM. A timing resolution for PET coincidence events of 60 ns FWHM was found.

CdTe Photovoltaics for Sustainable Electricity Generation

NASA Astrophysics Data System (ADS)

Munshi, Amit; Sampath, Walajabad

2016-09-01

Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

Electrodeposition of Ni on Bi2Te3 and Interfacial Reaction Between Sn and Ni-Coated Bi2Te3

NASA Astrophysics Data System (ADS)

Tseng, Yu-Chen; Lee, Hsuan; Hau, Nga Yu; Feng, Shien-Ping; Chen, Chih-Ming

2018-01-01

Bismuth-telluride (Bi2Te3)-based compounds are common thermoelectric materials used for low-temperature applications, and nickel (Ni) is usually deposited on the Bi2Te3 substrates as a diffusion barrier. Deposition of Ni on the p-type (Sb-doped) and n-type (Se-doped) Bi2Te3 substrates using electroplating and interfacial reactions between Sn and Ni-coated Bi2Te3 substrates are investigated. Electrodeposition of Ni on different Bi2Te3 substrates is characterized based on cyclic voltammetry and Tafel measurements. Microstructural characterizations of the Ni deposition and the Sn/Ni/Bi2Te3 interfacial reactions are performed using scanning electron microscopy. A faster growth rate is observed for the Ni deposition on the n-type Bi2Te3 substrate which is attributed to a lower activation energy of reduction due to a higher density of free electrons in the n-type Bi2Te3 material. The common Ni3Sn4 phase is formed at the Sn/Ni interfaces on both the p-type and n-type Bi2Te3 substrates, while the NiTe phase is formed at a faster rate at the interface between Ni and n-type Bi2Te3 substrates.

Ferroelectric relaxor behaviour and impedance spectroscopy of Bi2O3-doped barium zirconium titanate ceramics

NASA Astrophysics Data System (ADS)

Mahajan, Sandeep; Thakur, O P; Bhattacharya, D K; Sreenivas, K

2009-03-01

Bi2O3-doped barium zirconate titanate ceramics, Ba1-xBix(Zr0.05Ti0.95)O3, have been prepared by the conventional solid-state reaction method. The ferroelectric relaxor behaviour and dielectric properties have been investigated in detail. By XRD analysis, it is suggested that up to x = 0.04, Bi3+ substitutes A-site ion, and thereafter with higher Bi3+ content, it enters the B-site sub lattice. Substitution of Bi3+ ions induces ferroelectric relaxor behaviour and the degree of relaxation behaviour increases with bismuth concentration. The remanent polarization and strain behaviour show a slight increase with the substitution level. The degree of hysteresis (strain versus electric field) also reduces from 21.4% to 4.6% with bismuth substitution. Impedance measurements were made on the prepared sample over a wide range of temperatures (300-723 K) and frequencies (40 Hz-1 MHz), which show the presence of both bulk and grain boundary effects in the material. The bulk and grain boundary conductivities determined from impedance study indicate the Arrhenius-type thermally activated process. Impedance spectroscopy is shown to be an efficient method capable of detecting the contributions of the resistances of grains and grain boundaries to the complex impedance of a ceramic system, accurately estimating its electrical conductivity as well as its corresponding activation energies and drawing conclusions on its structural properties.

Photorefractivity in a Titanium Doped ZnCdTe Crystal

NASA Technical Reports Server (NTRS)

Davis, M.; Collins, L.; Dyer, K.; Tong, J.; Ueda, A.; Chen, H.; Chen, K.-T.; Burger, A.; Pan, Z.; Morgan, S. H.

1997-01-01

Single crystals of Zn(.04)Cd(.96)Te was grown by horizontal physical vapor transport (PVT) method and doped by annealing with TiTe2 powder at 600 C for six days. Photorefractive two-beam coupling, along with photoluminescence and absorption spectroscopy, were used to characterize the ZnCdTe:Ti crystal. At 1.32 micrometers, the photorefractive gain has been measured as a function of the grating period. A gain of about 0.16/cm was obtained at an intensity of about 0.1 W/sq cm. The results of this titanium doped ZnCdTe crystal are compared to that of vanadium-doped CdTe crystals reported previously.

Magnetic excitations and phonons simultaneously studied by resonant inelastic x-ray scattering in optimally doped Bi 1.5 Pb 0.55 Sr 1.6 La 0.4 CuO 6 + δ

DOE PAGES

Peng, Y. Y.; Hashimoto, M.; Sala, M. Moretti; ...

2015-08-24

In this paper, magnetic excitations in the optimally doped high-T c superconductor Bi 1.5Pb 0.55Sr 1.6La 0.4CuO 6+δ (OP-Bi2201, T c ≃ 34 K) are investigated by Cu L 3 edge resonant inelastic x-ray scattering (RIXS), below and above the pseudogap opening temperature. At both temperatures the broad spectral distribution disperses along the (1,0) direction up to ~350 meV at zone boundary, similar to other hole-doped cuprates. However, above ~0.22 reciprocal lattice units, we observe a concurrent intensity decrease for magnetic excitations and quasielastic signals with weak temperature dependence. This anomaly seems to indicate a coupling between magnetic, lattice, andmore » charge modes in this compound. We also compare the magnetic excitation spectra near the antinodal zone boundary in the single layer OP-Bi2201 and in the bilayer optimally doped Bi 1.5Pb 0.6Sr 1.54CaCu 2O 8+δ (OP-Bi2212, T c ≃ 96 K). Finally, the strong similarities in the paramagnon dispersion and in their energy at zone boundary indicate that the strength of the superexchange interaction and the short-range magnetic correlation cannot be directly related to T c, not even within the same family of cuprates.« less

Superconducting properties of under- and over-doped BaxK1‑xBiO3 perovskite oxide

NASA Astrophysics Data System (ADS)

Szczȩśniak, D.; Kaczmarek, A. Z.; Szczȩśniak, R.; Turchuk, S. V.; Zhao, H.; Drzazga, E. A.

2018-06-01

In this study, we investigate the thermodynamic properties of the BaxK1‑xBiO3 (BKBO) superconductor in the under- (x = 0.5) and over-doped (x = 0.7) regime, within the framework of the Migdal-Eliashberg formalism. The analysis is conducted to verify that the electron-phonon pairing mechanism is responsible for the induction of the superconducting phase in the mentioned compound. In particular, we show that BKBO is characterized by the relatively high critical value of the Coulomb pseudopotential, which changes with doping level and does not follow the Morel-Anderson model. In what follows, the corresponding superconducting band gap size and related dimensionless ratio are estimated to increase with the doping, in agreement with the experimental predictions. Moreover, the effective mass of electrons is found to take on high values in the entire doping and temperature region. Finally, the characteristic dimensionless ratios for the superconducting band gap, the critical magnetic field and the specific heat for the superconducting state are predicted to exceed the limits set within the Bardeen-Cooper-Schrieffer theory, suggesting pivotal role of the strong-coupling and retardation effects in the analyzed compound. Presented results supplement our previous investigations and account for the strong-coupling phonon-mediated character of the superconducting phase in BKBO at any doping level.

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3.

PubMed

Walsh, Lee A; Green, Avery J; Addou, Rafik; Nolting, Westly; Cormier, Christopher R; Barton, Adam T; Mowll, Tyler R; Yue, Ruoyu; Lu, Ning; Kim, Jiyoung; Kim, Moon J; LaBella, Vincent P; Ventrice, Carl A; McDonnell, Stephen; Vandenberghe, William G; Wallace, Robert M; Diebold, Alain; Hinkle, Christopher L

2018-06-08

The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current transport and defect tolerance due to suppressed backscattering. However, topological insulator based devices have been underwhelming to date primarily due to the presence of parasitic issues. An important example is the challenge of suppressing bulk conduction in Bi 2 Se 3 and achieving Fermi levels ( E F ) that reside in between the bulk valence and conduction bands so that the topologically protected surface states dominate the transport. The overwhelming majority of the Bi 2 Se 3 studies in the literature report strongly n-type materials with E F in the bulk conduction band due to the presence of a high concentration of selenium vacancies. In contrast, here we report the growth of near-intrinsic Bi 2 Se 3 with a minimal Se vacancy concentration providing a Fermi level near midgap with no extrinsic counter-doping required. We also demonstrate the crucial ability to tune E F from below midgap into the upper half of the gap near the conduction band edge by controlling the Se vacancy concentration using post-growth anneals. Additionally, we demonstrate the ability to maintain this Fermi level control following the careful, low-temperature removal of a protective Se cap, which allows samples to be transported in air for device fabrication. Thus, we provide detailed guidance for E F control that will finally enable researchers to fabricate high-performance devices that take advantage of transport through the topologically protected surface states of Bi 2 Se 3 .

Robust odd-parity superconductivity in the doped topological insulator NbxBi2Se3

NASA Astrophysics Data System (ADS)

Smylie, M. P.; Willa, K.; Claus, H.; Snezhko, A.; Martin, I.; Kwok, W.-K.; Qiu, Y.; Hor, Y. S.; Bokari, E.; Niraula, P.; Kayani, A.; Mishra, V.; Welp, U.

2017-09-01

We present resistivity and magnetization measurements on proton-irradiated crystals demonstrating that the superconducting state in the doped topological insulator NbxBi2Se3 (x =0.25 ) is surprisingly robust against disorder-induced electron scattering. The superconducting transition temperature Tc decreases without indication of saturation with increasing defect concentration, and the corresponding scattering rates far surpass expectations based on conventional theory. The low-temperature variation of the London penetration depth Δ λ (T ) follows a power law [Δ λ (T ) ˜T2] indicating the presence of symmetry-protected point nodes. Our results are consistent with the proposed robust nematic Eu pairing state in this material.

Performance analysis of bi-directional broadband passive optical network using erbium-doped fiber amplifier

NASA Astrophysics Data System (ADS)

Almalaq, Yasser; Matin, Mohammad A.

2014-09-01

The broadband passive optical network (BPON) has the ability to support high-speed data, voice, and video services to home and small businesses customers. In this work, the performance of bi-directional BPON is analyzed for both down and up streams traffic cases by the help of erbium doped fiber amplifier (EDFA). The importance of BPON is reduced cost. Because PBON uses a splitter the cost of the maintenance between the providers and the customers side is suitable. In the proposed research, BPON has been tested by the use of bit error rate (BER) analyzer. BER analyzer realizes maximum Q factor, minimum bit error rate, and eye height.

A green desulfurization technique: utilization of flue gas SO2 to produce H2 via a photoelectrochemical process based on Mo-doped BiVO4

NASA Astrophysics Data System (ADS)

Han, Jin; Li, Kejian; Cheng, Hanyun; Zhang, Liwu

2017-12-01

A green photoelectrochemical (PEC) process with simultaneous SO2 removal and H2 production has attracted an increasing attention. The proposed process uses flue gas SO2 to improve H2 production. The improvement of the efficiency of this process is necessary before it can become industrial viable. Herein, we reported a Mo modified BiVO4 photocatalysts for a simultaneous SO2 removal and H2 production. And the PEC performance could be significantly improved with doping and flue gas removal. The evolution rate of H2 and removal of SO2 could be enhanced by almost 3 times after Mo doping as compared with pristine BiVO4. The enhanced H2 production and SO2 removal is attributed to the improved bulk charge carrier transportation after Mo doping, and greatly enhanced oxidation reaction kinetics on the photoanode due to the formation of SO32- after SO2 absorption by the electrolyte. Due to the utilization of SO2 to improve the production of H2, the proposed PEC process may become a profitable desulfurization technique.

A Green Desulfurization Technique: Utilization of Flue Gas SO2 to Produce H2 via a Photoelectrochemical Process Based on Mo-Doped BiVO4

PubMed Central

Han, Jin; Li, Kejian; Cheng, Hanyun; Zhang, Liwu

2017-01-01

A green photoelectrochemical (PEC) process with simultaneous SO2 removal and H2 production has attracted an increasing attention. The proposed process uses flue gas SO2 to improve H2 production. The improvement of the efficiency of this process is necessary before it can become industrial viable. Herein, we reported a Mo modified BiVO4 photocatalysts for a simultaneous SO2 removal and H2 production. And the PEC performance could be significantly improved with doping and flue gas removal. The evolution rate of H2 and removal of SO2 could be enhanced by almost three times after Mo doping as compared with pristine BiVO4. The enhanced H2 production and SO2 removal is attributed to the improved bulk charge carrier transportation after Mo doping, and greatly enhanced oxidation reaction kinetics on the photoanode due to the formation of SO32− after SO2 absorption by the electrolyte. Due to the utilization of SO2 to improve the production of H2, the proposed PEC process may become a profitable desulfurization technique. PMID:29312924

A Green Desulfurization Technique: Utilization of Flue Gas SO2 to Produce H2 via a Photoelectrochemical Process Based on Mo-Doped BiVO4.

PubMed

Han, Jin; Li, Kejian; Cheng, Hanyun; Zhang, Liwu

2017-01-01

A green photoelectrochemical (PEC) process with simultaneous SO 2 removal and H 2 production has attracted an increasing attention. The proposed process uses flue gas SO 2 to improve H 2 production. The improvement of the efficiency of this process is necessary before it can become industrial viable. Herein, we reported a Mo modified BiVO 4 photocatalysts for a simultaneous SO 2 removal and H 2 production. And the PEC performance could be significantly improved with doping and flue gas removal. The evolution rate of H 2 and removal of SO 2 could be enhanced by almost three times after Mo doping as compared with pristine BiVO 4 . The enhanced H 2 production and SO 2 removal is attributed to the improved bulk charge carrier transportation after Mo doping, and greatly enhanced oxidation reaction kinetics on the photoanode due to the formation of [Formula: see text] after SO 2 absorption by the electrolyte. Due to the utilization of SO 2 to improve the production of H 2 , the proposed PEC process may become a profitable desulfurization technique.

High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

DOE PAGES

Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; ...

2016-01-01

Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative ofmore » a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.« less

Ferroelectric Sm-Doped BiMnO3 Thin Films with Ferromagnetic Transition Temperature Enhanced to 140 K

PubMed Central

2014-01-01

A combined chemical pressure and substrate biaxial pressure crystal engineering approach was demonstrated for producing highly epitaxial Sm-doped BiMnO3 (BSMO) films on SrTiO3 single crystal substrates, with enhanced magnetic transition temperatures, TC up to as high as 140 K, 40 K higher than that for standard BiMnO3 (BMO) films. Strong room temperature ferroelectricity with piezoresponse amplitude, d33 = 10 pm/V, and long-term retention of polarization were also observed. Furthermore, the BSMO films were much easier to grow than pure BMO films, with excellent phase purity over a wide growth window. The work represents a very effective way to independently control strain in-plane and out-of-plane, which is important not just for BMO but for controlling the properties of many other strongly correlated oxides. PMID:25141031

Absorption, fluorescence and second harmonic generation in Cr3+-doped BiB3O6 glasses

NASA Astrophysics Data System (ADS)

Kuznik, W.; Fuks-Janczarek, I.; Wojciechowski, A.; Kityk, I. V.; Kiisk, V.; Majchrowski, A.; Jaroszewicz, L. R.; Brik, M. G.; Nagy, G. U. L.

2015-06-01

Synthesis, spectral properties and photoinduced nonlinear optical effects of chromium-doped BiB3O6 glass are studied in the present paper. Absorption, excitation and time resolved luminescence spectra are presented and luminescence decay behavior is discussed. Detailed analysis of the obtained spectra (assignment of the most prominent spectral features in terms of the corresponding Cr3+ energy levels, crystal field strength Dq, Racah parameters B and C) was performed. A weak photostimulated second harmonic generation signal was found to increase drastically due to poling by proton implantation in the investigated sample.

Doped δ-bismuth oxides to investigate oxygen ion transport as a metric for condensed phase thermite ignition.

PubMed

Wang, Xizheng; Zhou, Wenbo; DeLisio, Jeffery B; Egan, Garth C; Zachariah, Michael R

2017-05-24

Nanothermites offer high energy density and high burn rates, but are mechanistically only now being understood. One question of interest is how initiation occurs and how the ignition temperature is related to microscopic controlling parameters. In this study, we explored the potential role of oxygen ion transport in Bi 2 O 3 as a controlling mechanism for condensed phase ignition reaction. Seven different doped δ-Bi 2 O 3 were synthesized by aerosol spray pyrolysis. The ignition temperatures of Al/doped Bi 2 O 3 , C/doped Bi 2 O 3 and Ta/doped Bi 2 O 3 were measured by temperature-jump/time-of-flight mass spectrometer coupled with a high-speed camera respectively. These results were then correlated to the corresponding oxygen ion conductivity (directly proportional to ion diffusivity) for these doped Bi 2 O 3 measured by impedance spectroscopy. We find that ignition of thermite with doped Bi 2 O 3 as oxidizer occurs at a critical oxygen ion conductivity (∼0.06 S cm -1 ) of doped Bi 2 O 3 in the condensed-phase so long as the aluminum is in a molten state. These results suggest that oxygen ion transport limits the condensed state Bi 2 O 3 oxidized thermite ignition. We also find that the larger oxygen vacancy concentration and the smaller metal-oxide bond energy in doped Bi 2 O 3 , the lower the ignition temperature. The latter suggests that we can consider the possibility of manipulating microscopic properties within a crystal, to tune the resultant energetic properties.

The layered double hydroxide route to Bi-Zn co-doped TiO₂ with high photocatalytic activity under visible light.

PubMed

Benalioua, Bahia; Mansour, Meriem; Bentouami, Abdelhadi; Boury, Bruno; Elandaloussi, El Hadj

2015-05-15

In this work, a co-doped Bi-Zn-TiO₂ photocatalist is synthesized by an original synthesis route of layered double hydroxide followed by heat treatment at 670 °C. After characterization the photocatalyst efficiency is estimated by the photo-discoloration of an anionic dye (indigo carmine) under visible light and compare to TiO₂-P25 as reference material. In this new photocatalyst, anatase and ZnO wurtzite are the only identified crystalline phase, rutile and Bi₂O₃ being undetected. Moreover, the binding energy of Bi determined (XPS analysis) is different from the one of Bi in Bi₂O₃. Compared to TiO₂-P25, the absorption is red shifted (UV-vis DRS) and the Bi-Zn-TiO₂ photocatalyst showed sorption capacity toward indigo carmine higher than that TiO₂-P25. The kinetics of the photo-discoloration is faster with Bi-Zn-TiO₂ than with TiO₂-P25. Indeed, a complete discoloration is obtained after 70 min and 120 min in the presence of Bi-Zn-TiO₂ and TiO₂-P25 respectively. The identification of the responsible species on photo-discoloration was carried out in the presence of different scavengers. The study showed that the first responsible is h(+) specie with a moderate contribution of superoxide anion radical and a minor contribution of the hydroxyl radical. The material showed high stability after five uses with the same rate of photo-discoloration. Copyright © 2015 Elsevier B.V. All rights reserved.

Interfacial characteristics and multiferroic properties of ion-doped BiFeO3/NiFe2O4 thin films

NASA Astrophysics Data System (ADS)

Guo, Meiyou; Tan, Guoqiang; Zheng, Yujuan; Liu, Wenlong; Ren, Huijun; Xia, Ao

2017-05-01

Multi-ion doped BiFeO3/NiFe2O4 bilayered thin films were successfully prepared on fluorine-doped SnO2/glass (SnO2:F) substrates by sol-gel method. The crystalline structure, leakage current, interfacial characteristics, and multiferroic properties were investigated in detail. The results of Rietveld refinement showed that the structure of BSrSFMC layer is transformed from rhombohedral to tetragonal structure by the means of ion-doping. The difference of leakage current density of the BSrSFMC/NiFe2O4 (NFO) bilayered films of the -40 V to 40 V and 40 V to -40 V are 0.32 × 10-5 and 1.13 × 10-5 A/cm2, respectively. It was observed that there are obvious interface effects between BSrSFMC and NFO layers, which will cause the accumulation of space charges and the establishment of built-in internal electric field (EI) at the interface. Therefore, different EI directions will affect the dipoles reversal and migration of carriers in the BSrSFMC layer, which will result in different values of transient current with the same applied voltage in the opposite directions. The larger coercive field (Ec ˜ 750 kV/cm) of BSrSFMC/NFO film indicated that there is a tensile stress at the interface between BSrSFMC and NFO layers, making the polarization difficult. These results showed that the above interesting phenomena of the J-V are closely related to the interface effects between the layer of BiFeO3 and NiFe2O4.

Role of valence changes and nanoscale atomic displacements in BiS2-based superconductors.

PubMed

Cheng, Jie; Zhai, Huifei; Wang, Yu; Xu, Wei; Liu, Shengli; Cao, Guanghan

2016-11-22

Superconductivity within layered crystal structures has attracted sustained interest among condensed matter community, primarily due to their exotic superconducting properties. EuBiS 2 F is a newly discovered member in the BiS 2 -based superconducting family, which shows superconductivity at 0.3 K without extrinsic doping. With 50 at.% Ce substitution for Eu, superconductivity is enhanced with Tc increased up to 2.2 K. However, the mechanisms for the T c enhancement have not yet been elucidated. In this study, the Ce-doping effect on the self-electron-doped superconductor EuBiS 2 F was investigated by X-ray absorption spectroscopy (XAS). We have established a relationship between Ce-doping and the T c enhancement in terms of Eu valence changes and nanoscale atomic displacements. The new finding sheds light on the interplay among superconductivity, charge and local structure in BiS 2 -based superconductors.

Effect of Ti4+ doping on magnetic properties of charge ordered Bi0.3Ca0.7MnO3

NASA Astrophysics Data System (ADS)

Yadav, Kamlesh; Singh, M. P.; Razavi, F. S.; Varma, G. D.

2017-07-01

The effect of Ti doping in Bi0.3Ca0.7Mn1-x Ti x O3 (where x  =  0.0, 0.015, 0.03, 0.05, 0.08, 0.12 and 0.16) on structural, magnetic and transport properties have been studied. The charge-ordering temperature (T CO) decreases gradually with increasing Ti doping content, and finally disappears completely for x  =  0.12. The Neel temperature (T N) also decreases with increasing Ti doping content. A transition to a cluster glass like state is observed at T  ⩽  T N. The zero field cooled/field cooled (ZFC/FC) magnetization decreases at high temperature (T  >  200 K) with increasing Ti content, whereas an opposite trend is observed at low temperature (T  <  200 K). Small exchange bias effect is also observed for x  =  0.08 at 10 K. The resistivity increases with increasing Ti doping content. The disorder induced by Ti doping on the Mn site plays a key role in explaining the observed magnetic and electrical properties.

First-principles calculation of the structure and electronic properties of Fe-substituted Bi2Ti2O7

NASA Astrophysics Data System (ADS)

Huang, Jin-Dou; Zhang, Zhenyi; Lin, Feng; Dong, Bin

2017-12-01

We performed first-principles calculations to investigate the formation energy, geometry structure, and electronic property of Fe-doped Bi2Ti2O7 systems with different Fe doping content. The calculated formation energies indicate that the substitutional configurations of Fe-doping Bi2Ti2O7 are easy to obtain under O-rich growth condition, but their thermodynamic stability decreases with the increase of Fe content. The calculated spin-resolved density of states and band structures indicate that the introduction of Fe into Bi2Ti2O7 brings high spin polarization. The spin-down impurity levels in Fe x Bi2-x Ti2O7 and spin-up impurity levels in Fe x Bi2Ti2-x O7 systems locate in the bottom of conduction band and narrow the band gap significantly, thus leading to the absorption of visible light. Interestingly, the impurity states in Fe x Bi2-x Ti2O7 are the efficient separation center of photogenerated electron and hole, and less affected by Fe doping content, in comparison, the levels of impurity band in Fe x Bi2Ti2-x O7 systems are largely effected by the Fe doping content, and high Fe doping content is the key factor to improve the separating rate of photogenerated electron and hole.

Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Punitha, K.; Sivakumar, R., E-mail: krsivakumar1979@yahoo.com; Sanjeeviraja, C.

2014-12-07

In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method.more » It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, and oscillator energy (E{sub o}) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 10{sup 4} Ω cm was obtained for the CdTe:Cu (3 wt. %) film.« less

Enhancement in electrical and magnetic properties with Ti-doping in Bi0.5La0.5Fe0.5Mn0.5O3

NASA Astrophysics Data System (ADS)

Singh, Rahul; Gupta, Prince Kumar; Kumar, Shiv; Joshi, Amish G.; Ghosh, A. K.; Patil, S.; Chatterjee, Sandip

2017-04-01

In this investigation, we have synthesized Bi0.5La0.5Fe0.5Mn0.5-xTixO3 (where x = 0 and 0.05) samples. The Rietveld refinement of X-ray diffraction (XRD) patterns shows that the systems crystallize in the orthorhombic phase with the Pnma space group. The observed Raman modes support the XRD results. The appearance of prominent A1-3 and weak E-2 modes in Bi0.5La0.5Fe0.5Mn0.45Ti0.05O3 indicates the presence of chemically more active Bi-O covalent bonds. Ferromagnetism of Bi0.5La0.5Fe0.5Mn0.5O3 is enhanced by Ti doping at the Mn-site, indicating that these particular samples might be interesting for device applications.

Microstructural and electrical characteristics of rare earth oxides doped ZnO varistor films

NASA Astrophysics Data System (ADS)

Jiao, Lei; Mei, Yunzhu; Xu, Dong; Zhong, Sujuan; Ma, Jia; Zhang, Lei; Bao, Li

2018-02-01

ZnO-Bi2O3 varistor films doped with two kinds of rare earth element oxides (Lu2O3 and Yb2O3) were prepared by the sol-gel method. The effects of Lu2O3/Yb2O3 doping on the microstructure and electrical characteristics of ZnO-Bi2O3 varistor films were investigated. All samples show a homogenized morphology and an improved nonlinear relationship between the electric field (E) and current density (I). Both Yb2O3 and Lu2O3 doping can decrease the grain size of ZnO-Bi2O3 varistor films and improve the electrical properties, which have a positive effect on the development of ZnO varistor ceramics. Yb2O3 doping significantly increases the dielectric constant at low frequency. 0.2 mol. % Yb2O3 doped ZnO-Bi2O3 varistor films exhibit the highest nonlinear coefficient (2.5) and the lowest leakage current (328 μA) among Lu2O3/Yb2O3 doped ZnO-Bi2O3 varistor films. Similarly, 0.1 mol. % Lu2O3 doping increases the nonlinear coefficient to 1.9 and decrease the leakage current to 462 μA.

Carrier doping into a superconducting BaPb0.7Bi0.3O3‑δ epitaxial film using an electric double-layer transistor structure

NASA Astrophysics Data System (ADS)

Komori, S.; Kakeya, I.

2018-06-01

Doping evolution of the unconventional superconducting properties in BaBiO3-based compounds has yet to be clarified in detail due to the significant change of the oxygen concentration accompanied by the chemical substitution. We suggest that the carrier concentration of an unconventional superconductor, BaPb0.7Bi0.3O3‑δ , is controllable without inducing chemical or structural changes using an electric double-layer transistor structure. The critical temperature is found to decrease systematically with increasing carrier concentration.

NREL Collaboration Breaks 1-Volt Barrier in CdTe Solar Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

2016-05-01

NREL scientists have worked with Washington State University and the University of Tennessee to improve the maximum voltage available from CdTe solar cells. Changes in dopants, stoichiometry, interface design, and defect chemistry improved the CdTe conductivity and carrier lifetime by orders of magnitude, thus enabling CdTe solar cells with open-circuit voltages exceeding 1 volt for the first time. Values of current density and fill factor for CdTe solar cells are already at high levels, but sub-par voltages has been a barrier to improved efficiencies. With voltages pushed beyond 1 volt, CdTe cells have a path to produce electricity at costsmore » less than fossil fuels.« less

Space-charge limited current in CdTe thin film solar cell

NASA Astrophysics Data System (ADS)

Li, Qiang; Shen, Kai; Li, Xun; Yang, Ruilong; Deng, Yi; Wang, Deliang

2018-04-01

In this study, we demonstrate that space-charge limited current (SCLC) is an intrinsic current shunting leakage in CdTe thin film solar cells. The SCLC leakage channel, which is formed by contact between the front electrode, CdTe, and the back electrode, acts as a metal-semiconductor-metal (MSM) like transport path. The presence of SCLC leaking microchannels in CdTe leads to a band bending at the MSM structure, which enhances minority carrier recombination and thus decreases the minority carrier lifetime in CdTe thin film solar cells. SCLC was found to be a limiting factor both for the fill factor and the open-circuit voltage of CdTe thin film solar cells.

Robust odd-parity superconductivity in the doped topological insulator Nb x Bi 2 Se 3

DOE PAGES

Smylie, M. P.; Willa, K.; Claus, H.; ...

2017-09-15

We present resistivity and magnetization measurements on proton-irradiated crystals demonstrating that the superconducting state in the doped topological insulator Nb xBi 2Se 3 (x = 0.25) is surprisingly robust against disorder-induced electron scattering. The superconducting transition temperature Tc decreases without indication of saturation with increasing defect concentration, and the corresponding scattering rates far surpass expectations based on conventional theory. The low-temperature variation of the London penetration depth Δλ(T) follows a power law [Δλ(T)~T 2] indicating the presence of symmetry-protected point nodes. Lastly, our results are consistent with the proposed robust nematic E u pairing state in this material.

Remarkable photo-catalytic degradation of malachite green by nickel doped bismuth selenide under visible light irradiation

NASA Astrophysics Data System (ADS)

Kulsi, Chiranjit; Ghosh, Amrita; Mondal, Anup; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

2017-01-01

Bismuth selenide (Bi2Se3) and nickel (Ni) doped Bi2Se3 were prepared by a solvothermal approach to explore the photo-catalytic performance of the materials in degradation of malachite green (MG). The presence of nickel was confirmed by X-ray photoelectron spectroscopy (XPS) measurement in doped Bi2Se3. The results showed that the nickel doping played an important role in microstructure and photo-catalytic activity of the samples. Nickel doped Bi2Se3 sample exhibited higher photo-catalytic activity than that of the pure Bi2Se3 sample under visible-light irradiation. The photo-catalytic degradation followed first-order reaction kinetics. Fast degradation kinetics and complete (100% in 5 min of visible light irradiation) removal of MG was achieved by nickel doped Bi2Se3 in presence of hydrogen peroxide (H2O2) due to modification of band gap energies leading to suppression of photo-generated electron-hole recombination.

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collins-McIntyre, L. J.; Watson, M. D.; Zhang, S. L.

2014-12-15

We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mnmore » is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.« less

Raman characterization of a new Te-rich binary compound: CdTe2.

PubMed

Rousset, Jean; Rzepka, Edouard; Lincot, Daniel

2009-04-02

Structural characterization by Raman spectroscopy of CdTe thin films electrodeposited in acidic conditions is considered in this work. This study focuses on the evolution of material properties as a function of the applied potential and the film thickness, demonstrating the possibility to obtain a new Te-rich compound with a II/VI ratio of 1/2 under specific bath conditions. Raman measurements carried out on etched samples first allow the elimination of the assumption of a mixture of phases CdTe + Te and tend to confirm the formation of the CdTe(2) binary compound. The signature of this phase on the Raman spectrum is the increase of the LO band intensity compared to that obtained for the CdTe. The influence of the laser power is also considered. While no effect is observed on CdTe films, the increase of the incident irradiation power leads to the decomposition of the CdTe(2) compound into two more stable phases namely CdTe and Te.

Spin-rotation symmetry breaking and triplet superconducting state in doped topological insulator CuxBi2Se3

NASA Astrophysics Data System (ADS)

Zheng, Guo-Qing

Spontaneous symmetry breaking is an important concept for understanding physics ranging from the elementary particles to states of matter. For example, the superconducting state breaks global gauge symmetry, and unconventional superconductors can break additional symmetries. In particular, spin rotational symmetry is expected to be broken in spin-triplet superconductors. However, experimental evidence for such symmetry breaking has not been obtained so far in any candidate compounds. We report 77Se nuclear magnetic resonance measurements which showed that spin rotation symmetry is spontaneously broken in the hexagonal plane of the electron-doped topological insulator Cu0.3Bi2Se3 below the superconducting transition temperature Tc =3.4 K. Our results not only establish spin-triplet (odd parity) superconductivity in this compound, but also serve to lay a foundation for the research of topological superconductivity (Ref.). We will also report the doping mechanism and superconductivity in Sn1-xInxTe.

Study of morphology effects on magnetic interactions and band gap variations for 3d late transition metal bi-doped ZnO nanostructures by hybrid DFT calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datta, Soumendu, E-mail: soumendu@bose.res.in; Baral, Sayan; Mookerjee, Abhijit

2015-08-28

Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nanostructures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band gaps have been studied in the case of the bi-doped (ZnO){sub 24} nanostructures with the impurity dopant atoms of the 3d late transition metals—Mn, Fe, Co, Ni, and Cu. To explore the morphology effect, three different structures of the host (ZnO){sub 24} nano-system, having different degrees of spatial confinement, have been considered: a two dimensional nanosheet, a one dimensional nanotube, and a finite cage-shaped nanocluster. The presentmore » study employs hybrid density functional theory to accurately describe the electronic structure of all the systems. It is shown here that the magnetic coupling between the two dopant atoms remains mostly anti-ferromagnetic in the course of changing the morphology from the sheet geometry to the cage-shaped geometry of the host systems, except for the case of energetically most stable bi-Mn doping, which shows a transition from ferromagnetic to anti-ferromagnetic coupling with decreasing aspect ratio of the host system. The effect of the shape change, however, has a significant effect on the overall band gap variations of both the pristine as well as all the bi-doped systems, irrespective of the nature of the dopant atoms and provides a means for easy tunability of their optoelectronic properties.« less

Study of morphology effects on magnetic interactions and band gap variations for 3d late transition metal bi-doped ZnO nanostructures by hybrid DFT calculations

NASA Astrophysics Data System (ADS)

Datta, Soumendu; Kaphle, Gopi Chandra; Baral, Sayan; Mookerjee, Abhijit

2015-08-01

Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nanostructures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band gaps have been studied in the case of the bi-doped (ZnO)24 nanostructures with the impurity dopant atoms of the 3d late transition metals—Mn, Fe, Co, Ni, and Cu. To explore the morphology effect, three different structures of the host (ZnO)24 nano-system, having different degrees of spatial confinement, have been considered: a two dimensional nanosheet, a one dimensional nanotube, and a finite cage-shaped nanocluster. The present study employs hybrid density functional theory to accurately describe the electronic structure of all the systems. It is shown here that the magnetic coupling between the two dopant atoms remains mostly anti-ferromagnetic in the course of changing the morphology from the sheet geometry to the cage-shaped geometry of the host systems, except for the case of energetically most stable bi-Mn doping, which shows a transition from ferromagnetic to anti-ferromagnetic coupling with decreasing aspect ratio of the host system. The effect of the shape change, however, has a significant effect on the overall band gap variations of both the pristine as well as all the bi-doped systems, irrespective of the nature of the dopant atoms and provides a means for easy tunability of their optoelectronic properties.

BiCuSeO Thermoelectrics: An Update on Recent Progress and Perspective

PubMed Central

Zhang, Xiaoxuan; Chang, Cheng; Zhou, Yiming; Zhao, Li-Dong

2017-01-01

A BiCuSeO system has been reported as a promising thermoelectric material and has attracted great attention in the thermoelectric community since 2010. Recently, several remarkable studies have been reported and the ZT of BiCuSeO was pushed to a higher level. It motivates us to systematically summarize the recent reports on the BiCuSeO system. In this short review, we start with several attempts to optimize thermoelectric properties of BiCuSeO. Then, we introduce several opinions to explore the origins of low thermal conductivity for BiCuSeO. Several approaches to enhance thermoelectric performance are also summarized, including modulation doping, introducing dual-vacancies, and dual-doping, etc. At last, we propose some possible strategies for enhancing thermoelectric performance of BiCuSeO in future research. PMID:28772557

Water-soluble CdTe nanocrystals under high pressure

NASA Astrophysics Data System (ADS)

Lin, Yan-Cheng

2015-02-01

The application of static high pressure provides a method for precisely controlling and investigating many fundamental and unique properties of semiconductor nanocrystals (NCs). This study systematically investigates the high-pressure photoluminescence (PL) and time-resolved carrier dynamics of thiol-capped CdTe NCs of different sizes, at different concentrations, and in various stress environments. The zincblende-to-rocksalt phase transition in thiol-capped CdTe NCs is observed at a pressure far in excess of the bulk phase transition pressure. Additionally, the process of transformation depends strongly on NC size, and the phase transition pressure increases with NC size. These peculiar phenomena are attributed to the distinctive bonding of thiols to the NC surface. In a nonhydrostatic environment, considerable flattening of the PL energy of CdTe NCs powder is observed above 3.0 GPa. Furthermore, asymmetric and double-peak PL emissions are obtained from a concentrated solution of CdTe NCs under hydrostatic pressure, implying the feasibility of pressure-induced interparticle coupling.

Spatial luminescence imaging of dopant incorporation in CdTe Films

DOE PAGES

Guthrey, Harvey; Moseley, John; Colegrove, Eric; ...

2017-01-25

State-of-the-art cathodoluminescence (CL) spectrum imaging with spectrum-per-pixel CL emission mapping is applied to spatially profile how dopant elements are incorporated into Cadmium telluride (CdTe). Emission spectra and intensity monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on computational modeling. Our results show that grain boundaries play a role in incorporating dopants in CdTe exposed to copper, phosphorus, and intrinsic point defects in CdTe. Furthermore, the image analysis provides critical, unique feedback to understand dopant incorporation and activation in the inhomogeneous CdTe material, which has struggled to reach high levels of hole density.

Choice of Substrate Material for Epitaxial CdTe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

2015-06-14

Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

Ni doping dependent dielectric, leakage, ferroelectric and magnetic properties in Bi7Fe3-xNixTi3O21 thin films

NASA Astrophysics Data System (ADS)

Yang, B. B.; Song, D. P.; Wei, R. H.; Tang, X. W.; Hu, L.; Yang, J.; Song, W. H.; Dai, J. M.; Zhu, X. B.; Sun, Y. P.

2018-05-01

Bi7Fe3-xNixTi3O21 thin films were prepared by chemical solution deposition on Pt/Ti/SiO2/Si substrates. The Ni doping effects on the dielectric, leakage, ferroelectric and magnetic properties were investigated. Coexistence of ferroelectric and ferromagnetic properties at room-temperature was observed in the Bi7Fe2NiTi3O21 thin film with a remnant polarization 2Pr of 36.4 μC/cm2 and a remnant magnetization 2Mr of 3.9 emu/cm3. The dielectric and leakage properties were discussed in detailed. The results will provide important information to explore single-phase multiferroic materials.

Enhanced infrared-to-visible up-conversion emission and temperature sensitivity in (Er3+,Yb3+, and W6+) tri-doped Bi4Ti3O12 ferroelectric oxide

NASA Astrophysics Data System (ADS)

Bokolia, Renuka; Mondal, Manisha; Rai, V. K.; Sreenivas, K.

2017-02-01

Strong up conversion (UC) luminescence at 527, 550, and 662 nm is compared under an excitation of 980 nm in single doped (Er3+), co-doped (Er3+/Yb3+), and (Er3+/Yb3+/W6+) tri-doped bismuth titanate (Bi4Ti3O12). For the co-doped system, the frequency (UC) emission intensity due to Er3+ ions is enhanced significantly in the green bands due to the efficient energy transfer from Yb3+ to Er3+ ions. Further increase in the emission intensity is seen with non-luminescent W6+ ions in the tri-doped system due to the modification in the local crystal field around the Er3+ ions, and is evidenced through a gradual change in the crystal structure of the host lattice with increasing W6+ content. The observed changes in the fluorescence lifetime and the associated energy transfer mechanisms are discussed. A progressive reduction of the lifetime of the 4S3/2 levels of Er3+ ions from 72 to 58.7 μs with the introduction of Yb3+ and W6+ dopant increases the transition probability and enhances the UC emission intensity. The efficiency of the energy transfer process ( η ) in the co-doped and tri-doped systems is found to be 9.4% and 18.6%, respectively, in comparison to the single doped system. Temperature sensing based on the fluorescence intensity ratio (FR) technique shows high sensitivity (0.0123 K-1) in the high temperature range (293 to 523 K) for an optimum content of Er3+, Yb3+, and W6+ with x = 0.03, y = 0.18, and z = 0.06 at. % in the tri-doped Bi4-x-yErxYbyTi3-zWzO12 ferroelectric composition, and is found useful for potential applications in optical thermometry.

Optical, structural and thermal properties of bismuth nitrate doped polycarbonate composite

NASA Astrophysics Data System (ADS)

Mirji, Rajeshwari; Lobo, Blaise

2018-04-01

Bismuth nitrate (Bi(NO3)3) doped polycarbonate (PC) films were prepared by solution casting method, in the doping range varying from 0.1 wt% to 5 wt %. The prepared samples were characterized using UV-Visible spectroscopy, X-Ray Diffraction (XRD) and Differential Scanning Calorimetry (DSC). Optical band gap was calculated by analyzing the UV-Visible spectra of pure as well as doped PC. Optical band gap is found to decrease from 4.38 eV to 4.33 eV as the Bi(NO3)3 content within PC increases. XRD patterns showed an increase in the degree of crystallinity of Bi(NO3)3 doped PC, especially at 3.5 wt% and 5 wt%. DSC study showed an increase in the degradation temperature, as the doping level is increased from 0 wt% up to 0.3 wt%. A decrease in Tg is observed as the doping level of these samples increases from 0 wt% up to 5 wt%.

Novel Y doped Bi{sub 2}WO{sub 6} photocatalyst: Hydrothermal fabrication, characterization and enhanced visible-light-driven photocatalytic activity for Rhodamine B degradation and photocurrent generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Ranran; Huang, Hongwei, E-mail: hhw@cugb.edu.cn; Tian, Na

2015-03-15

Visible-light-driven (VLD) Yttrium (Y) ion doped Bi{sub 2}WO{sub 6} photocatalyst has been synthesized via a facile hydrothermal route. Incorporation of Y{sup 3} {sup +} into Bi{sub 2}WO{sub 6} lattice was successfully confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and ICP analysis. The microstructure and optical property of the as-prepared samples have been characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), nitrogen adsorption–desorption isotherm and UV–vis diffuse reflectance spectra (DRS). The photocatalytic experiments indicated that the Y-Bi{sub 2}WO{sub 6} showed a much higher photocatalytic activity than the pristine Bi{sub 2}WO{sub 6} for the degradation of Rhodamine Bmore » (RhB) and photocurrent (PC) generation. This enhancement should be ascribed to the slightly increased band gap and the generated defects by Y{sup 3} {sup +} doping, thus resulting in a much lower recombination rate of the photoinduced electrons and holes. Such a process was verified by the photoluminescence (PL) spectroscopy. In addition, the active species trapping experiments indicated that holes (h{sup +}) and superoxide radicals (·O{sub 2}{sup −}) play important roles in the photocatalytic reaction. - Highlights: • Novel Y-Bi{sub 2}WO{sub 6} photocatalyst has been synthesized by a facile hydrothermal route. • Y-Bi{sub 2}WO{sub 6} exhibits a much higher photocatalytic activity than pristine Bi{sub 2}WO{sub 6}. • Holes (h{sup +}) and superoxide radicals (·O{sub 2}{sup −}) are the two main active species. • Y{sup 3} {sup +} ion can result in a low recombination of photogenerated electron and hole.« less

Thermoelectric properties of Bi1-xSnxCuSeO solid solutions.

PubMed

Yang, Yuqing; Liu, Xiaocun; Liang, Xin

2017-02-21

We report the enhanced thermoelectric properties of p-type BiCuSeO by tin doping on bismuth sites. Powder X-ray diffraction analysis and Hall measurements indicated effective tin doping in all samples. We found that the doping efficiency of Sn is lower than expected, as seen from the measured carrier concentration. First-principles calculations indicate that the Sn lone pair modifies the band structure at the Fermi level, with the consequent effect observed in the electrical transport and Seebeck coefficient measurements. An enhanced thermoelectric power factor of ∼2.5 μW cm -1 K -2 was reached at 773 K. No significant effect of Sn doping on the thermal conductivity was found; a thermoelectric figure of merit value (ZT) of 0.3 at 773 K is achieved for Bi 0.9 Sn 0.1 CuSeO, which is more than twice that of the pristine BiCuSeO.

Scanning tunneling spectroscopic (STS) studies of the bulk magnetic doping effects on the surface state of Bi2Se3

NASA Astrophysics Data System (ADS)

Chen, C.-C.; Teague, M. L.; Woodward, N. D.; Yeh, N.-C.; He, L.; Kou, X.; Lang, M.; Wang, K.-L.

2014-03-01

We report STS studies of MBE-grown undoped and Cr-doped Bi2Se3 bi-layers on InP (111) and as a function of the updoped layer thickness and the Cr-doping level (x) . Our studies reveal gapless Dirac spectra at all temperatures (T) for samples with an undoped top layer larger than 5 QLs, implying that the interlayer magnetic correlation length ξ⊥ is < ~ 5-QL. For samples with an undoped top layer smaller than 5 QLs, STS reveals gapped spectra at T

Y3Fe5O12/Na,Bi,Sr-doped PZT particulate magnetoelectric composites

NASA Astrophysics Data System (ADS)

Lisnevskaya, I. V.; Bobrova, I. A.; Lupeiko, T. G.; Agamirzoeva, M. R.; Myagkaya, K. V.

2016-05-01

Magnetoelectric (ME) composites of Na, Bi, Sr substituted lead zirconate titanate (PZT) and yttrium iron garnet having representative formula (100-x) wt% Na,Bi,Sr-doped PZT (PZTNB-1)+x wt% Y3Fe5O12 (YIG) with x=10-90 were manufactured using powdered components obtained through sol-gel processes. It is shown that the decrease in sintering temperature provided by the use of finely dispersed PZTNB-1 and YIG powders allows to significantly reduce content of fluorite-like foreign phase based on zirconium oxide, which forms due to the interfacial interaction during heat treatment and becomes stabilized by yttrium oxide. Connectivity has considerable effect on the value of ME coefficient of composite ceramics. With the same x value, ΔE/ΔH characteristic decreases when changing from 0-3-type structured composites (PZT grains embedded in ferrite matrix) to 3-3-(interpenetrating network of two phases) and especially 3-0-type samples (YIG grains embedded in PZT matrix); in the last case this can be attributed to the substrate clamping effect when ferrite grains are clamped with piezoelectric matrix. ΔE/ΔH value of 0-3 composites with x=40-60 wt% was found to be ∼1.6 mV/(cm Oe).

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao, E-mail: tsong241@gmail.com; Sites, James R.; Kanevce, Ana

The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interfacemore » defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C

BiVO4 thin film photoanodes grown by chemical vapor deposition.

PubMed

Alarcón-Lladó, Esther; Chen, Le; Hettick, Mark; Mashouf, Neeka; Lin, Yongjing; Javey, Ali; Ager, Joel W

2014-01-28

BiVO4 thin film photoanodes were grown by vapor transport chemical deposition on FTO/glass substrates. By controlling the flow rate, the temperatures of the Bi and V sources (Bi metal and V2O5 powder, respectively), and the temperature of the deposition zone in a two-zone furnace, single-phase monoclinic BiVO4 thin films can be obtained. The CVD-grown films produce global AM1.5 photocurrent densities up to 1 mA cm(-2) in aqueous conditions in the presence of a sacrificial reagent. Front illuminated photocatalytic performance can be improved by inserting either a SnO2 hole blocking layer and/or a thin, extrinsically Mo doped BiVO4 layer between the FTO and the CVD-grown layer. The incident photon to current efficiency (IPCE), measured under front illumination, for BiVO4 grown directly on FTO/glass is about 10% for wavelengths below 450 nm at a bias of +0.6 V vs. Ag/AgCl. For BiVO4 grown on a 40 nm SnO2/20 nm Mo-doped BiVO4 back contact, the IPCE is increased to over 40% at wavelengths below 420 nm.

Luminescence properties of Sr2Mg3P4O15:Mn2+ phosphor and the improvement by co-doping Bi3+

NASA Astrophysics Data System (ADS)

Cao, Renping; Wang, Wudi; Zhang, Jinlong; Ye, Yujiao; Chen, Ting; Guo, Siling; Xiao, Fen; Luo, Zhiyang

2018-05-01

Sr2Mg3P4O15:R (R = Bi3+, Mn2+, and Bi3+/Mn2+) phosphors are synthesized by a solid-state reaction method in air. Sr2Mg3P4O15:Bi3+ phosphor with excitation 380 nm shows blue light and its emission band peaking at ∼445 nm is observed. Under excitation at 355 and 416 nm, Sr2Mg3P4O15:Mn2+ phosphor shows red emission with a single broad emission band peaking at ∼630 nm in the range of 500-800 nm owing to the 4T1(G) → 6A1 transition of the Mn2+ ion. The optimal Mn2+ ion content in Sr2Mg3P4O15:Mn2+ phosphor is ∼0.05 and the lifetime of Sr2Mg2.95P4O15:0.05Mn2+ phosphor is ∼6.17 ms. After Bi3+ ion is co-doped, emission intensity of Sr2Mg3P4O15:Mn2+ phosphor can be enhanced obviously due to energy transfer (ET) from Bi3+ to Mn2+, which is confirmed by the luminescence properties and lifetimes of Sr2Mg3-xP4O15:Bi3+, Mn2+ phosphor. Luminous mechanism and ET process of Sr2Mg3-xP4O15:Bi3+, Mn2+ phosphor are explained by the simple energy level diagram of Bi3+ and Mn2+ ions.

The simultaneous enhancement of photorefraction and optical damage resistance in MgO and Bi2O3 co-doped LiNbO3 crystals

PubMed Central

Zheng, Dahuai; Kong, Yongfa; Liu, Shiguo; Chen, Muling; Chen, Shaolin; Zhang, Ling; Rupp, Romano; Xu, Jingjun

2016-01-01

For a long time that optical damage was renamed as photorefraction, here we find that the optical damage resistance and photorefraction can be simultaneously enhanced in MgO and Bi2O3 co-doped LiNbO3 (LN:Bi,Mg). The photorefractive response time of LN:Bi,Mg was shortened to 170 ms while the photorefractive sensitivity reached up to 21 cm2/J. Meanwhile, LN:Bi,Mg crystals could withstand a light intensity higher than 106  W/cm2 without apparent optical damage. Our experimental results indicate that photorefraction doesn’t equal to optical damage. The underground mechanism was analyzed and attributed to that diffusion dominates the transport process of charge carriers, that is to say photorefraction causes only slight optical damage under diffusion mechanism, which is very important for the practical applications of photorefractive crystals, such as in holographic storage, integrated optics and 3D display. PMID:26837261

Influence of EDTA{sup 2-} on the hydrothermal synthesis of CdTe nanocrystallites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong Haibo; School of Materials Science and Engineering, University of Jinan, Jinan 250022; Hao Xiaopeng, E-mail: xphao@sdu.edu.cn

2011-12-15

Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd{sup 2+}. Furthermore,more » the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA{sup 2-}. Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: Black-Right-Pointing-Pointer EDTA serves as a strong ligand with Cd{sup 2+}. Black-Right-Pointing-Pointer The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. Black-Right-Pointing-Pointer With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Black-Right-Pointing-Pointer Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.« less

Influence of CdTe Deposition Temperature and Window Thickness on CdTe Grain Size and Lifetime After CdCl 2 Recrystallization

DOE PAGES

Amarasinghe, Mahisha; Colegrove, Eric; Moutinho, Helio; ...

2018-01-23

Grain structure influences both transport and recombination in CdTe solar cells. Larger grains generally are obtained with higher deposition temperatures, but commercially it is important to avoid softening soda-lime glass. Furthermore, depositing at lower temperatures can enable different substrates and reduced cost in the future. We examine how initial deposition temperatures and morphology influence grain size and lifetime after CdCl 2 recrystallization. Techniques are developed to estimate grain distribution quickly with low-cost optical microscopy, which compares well with electron backscatter diffraction data providing corroborative assessments of exposed CdTe grain structures. Average grain size increases as a function of CdCl 2more » temperature. For lower temperature close-spaced sublimation CdTe depositions, there can be more stress and grain segregation during recrystallization. However, the resulting lifetimes and grain sizes are similar to high-temperature CdTe depositions. The grain structures and lifetimes are largely independent of the presence and/or interdiffusion of Se at the interface, before and after the CdCl 2 treatment.« less

Influence of CdTe Deposition Temperature and Window Thickness on CdTe Grain Size and Lifetime After CdCl 2 Recrystallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amarasinghe, Mahisha; Colegrove, Eric; Moutinho, Helio

Grain structure influences both transport and recombination in CdTe solar cells. Larger grains generally are obtained with higher deposition temperatures, but commercially it is important to avoid softening soda-lime glass. Furthermore, depositing at lower temperatures can enable different substrates and reduced cost in the future. We examine how initial deposition temperatures and morphology influence grain size and lifetime after CdCl 2 recrystallization. Techniques are developed to estimate grain distribution quickly with low-cost optical microscopy, which compares well with electron backscatter diffraction data providing corroborative assessments of exposed CdTe grain structures. Average grain size increases as a function of CdCl 2more » temperature. For lower temperature close-spaced sublimation CdTe depositions, there can be more stress and grain segregation during recrystallization. However, the resulting lifetimes and grain sizes are similar to high-temperature CdTe depositions. The grain structures and lifetimes are largely independent of the presence and/or interdiffusion of Se at the interface, before and after the CdCl 2 treatment.« less

Influence of Doping and Nanostructuration on n-Type Bi2(Te0.8Se0.2)3 Alloys Synthesized by Arc Melting

NASA Astrophysics Data System (ADS)

Gharsallah, Mouna; Serrano-Sanchez, Federico; Nemes, Norbert M.; Martinez, Jose Luis; Alonso, Jose Antonio

2017-01-01

In competitive thermoelectric devices for energy conversion and generation, high-efficiency materials of both n-type and p-type are required. For this, Bi2Te3-based alloys have the best thermoelectric properties in room temperature applications. Partial replacement of tellurium by selenium is expected to introduce new donor states in the band gap, which would alter electrical conductivity and thermopower. We report on the preparation of n-type Bi2(Te1-xSex)3 solid solutions by a straightforward arc-melting technique, yielding nanostructured polycrystalline pellets. X-ray and neutron powder diffraction was used to assess Se inclusion, also indicating that the interactions between quintuple layers constituting this material are weakened upon Se doping, while the covalency of intralayer bonds is augmented. Moreover, scanning electron microscopy shows large surfaces perpendicular to the c crystallographic axis assembled as stacked sheets. Grain boundaries related to this 2D nanostructuration affect the thermal conductivity reducing it below 0.8 Wm-1K-1 at room temperature. Furthermore, Se doping increases the absolute Seebeck coefficient up to -140 μV K-1 at 400 K, which is also beneficial for improved thermoelectric efficiency.

Thermoelectric Properties in Fermi Level Tuned Topological Materials (Bi1-xSnx)2Te3

NASA Astrophysics Data System (ADS)

Lin, Chan-Chieh; Shon, Won Hyuk; Rathnam, Lydia; Rhyee, Jong-Soo

2018-03-01

We investigated the thermoelectric properties of Sn-doped (Bi1-xSnx)2Te3 (x = 0, 0.1, 0.3, 0.5, and 0.7%) compounds, which is known as topological insulators. Fermi level tuning by Sn-doping can be justified by the n- to p-type transition with increasing Sn-doping concentration, as confirmed by Seebeck coefficient and Hall coefficient. Near x = 0.3 and 0.5%, the Fermi level resides inside the bulk band gap, resulting in a low Seebeck coefficient and increase of electrical resistivity. The magnetoconductivity with applying magnetic field showed weak antilocalization (WAL) effect for pristine Bi2Te3 while Sn-doped compounds do not follow the WAL behavior of magneto-conductivity, implying that the topological surface Dirac band contribution in magneto-conductivity is suppressed with decreasing the Fermi level by Sn-doping. This research can be applied to the topological composite of p-type/n-type topological materials by Fermi level tuning via Sn-doping in Bi2Te3 compounds.

[Oxidative damage effects induced by CdTe quantum dots in mice].

PubMed

Xie, G Y; Chen, W; Wang, Q K; Cheng, X R; Xu, J N; Huang, P L

2017-07-20

Objective: To investigate Oxidative damage effects induced by CdTe Quantum Dots (QDs) in mice. Methods: 40 ICR mice were randomly divided into 5 groups: one control group (normal saline) ; four CdTe QDs (exposed by intravenous injection of 0.2 ml of CdTe QDs at the concentration of 0、0.5、5.0、50.0 and 500.0 nmol/ml respectively) . After 24 h, the mice were decapitated and the blood was collected for serum biochemically indexes、hematology indexes, the activities of SOD、GSH-Px and the concentration of MDA were all detected. Results: The results showed in the four CdTe QDs exposure groups, the level of CRE、PLT and the concentration of MDA were all significantly lower than those of the control group ( P <0.05 or P <0.01) ; the activities GSH - Px in 50.0 and 500.0 nmol/ml CdTe QDs group were significantly higher than those of control group ( P <0.01) . Conclusion: It was suggested that CdTe QDs at 0.5 nmol/ml could induce Oxidative damage effects in mice.

Bi2O2Se nanosheet: An excellent high-temperature n-type thermoelectric material

NASA Astrophysics Data System (ADS)

Yu, Jiabing; Sun, Qiang

2018-01-01

Motivated by the recent synthesis of an ultrathin film of layered Bi2O2Se [Wu et al., Nat. Nanotechnol. 12, 530 (2017); Wu et al., Nano Lett. 17, 3021 (2017)], we have systematically studied the thermoelectric properties of a Bi2O2Se nanosheet using first principles density functional theory combined with semiclassical Boltzmann transport theory. The calculated results indicate that the Bi2O2Se nanosheet exhibits a figure of merit (ZT) of 3.35 for optimal n-type doping at 800 K, which is much larger than the ZT value of 2.6 at 923 K in SnSe known as the most efficient thermoelectric material [Zhao et al., Nature 508, 373 (2014)]. Equally important, the high ZT in the n-type doped Bi2O2Se nanosheet highlights the efficiency of the reduced dimension on improving thermoelectric performance as compared with strain engineering by which the ZT of n-type doped bulk Bi2O2Se cannot be effectively enhanced.

Anatase/rutile bi-phasic titanium dioxide nanoparticles for photocatalytic applications enhanced by nitrogen doping and platinum nano-islands.

PubMed

Bear, Joseph C; Gomez, Virginia; Kefallinos, Nikolaos S; McGettrick, James D; Barron, Andrew R; Dunnill, Charles W

2015-12-15

Titanium dioxide (TiO2) bi-phasic powders with individual particles containing an anatase and rutile hetero-junction have been prepared using a sequential layer sol-gel deposition technique to soluble substrates. Sequential thin films of rutile and subsequently anatase TiO2 were deposited onto sodium chloride substrates yielding extremely fragile composite layered discs that fractured into "Janus-like" like powders on substrate dissolution. Nitrogen doped and platinum sputtered analogues were also prepared, and analysed for photocatalytic potential using the photodegradation of Rhodamine B, a model organic pollutant under UV and visible light irradiation. The materials were characterised using X-ray diffraction, X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, Raman spectroscopy and scanning electron microscopy. This paper sheds light on the relationship between anatase and rutile materials when in direct contact and demonstrates a robust method for the synthesis of bi-phasic nanoparticles, ostensibly of any two materials, for photocatalytic reactions or otherwise. Copyright © 2015 Elsevier Inc. All rights reserved.

Interaction and energy transfer studies between bovine serum albumin and CdTe quantum dots conjugates: CdTe QDs as energy acceptor probes.

PubMed

Kotresh, M G; Inamdar, L S; Shivkumar, M A; Adarsh, K S; Jagatap, B N; Mulimani, B G; Advirao, G M; Inamdar, S R

2017-06-01

In this paper, a systematic investigation of the interaction of bovine serum albumin (BSA) with water-soluble CdTe quantum dots (QDs) of two different sizes capped with carboxylic thiols is presented based on steady-state and time-resolved fluorescence measurements. Efficient Förster resonance energy transfer (FRET) was observed to occur from BSA donor to CdTe acceptor as noted from reduction in the fluorescence of BSA and enhanced fluorescence from CdTe QDs. FRET parameters such as Förster distance, spectral overlap integral, FRET rate constant and efficiency were determined. The quenching of BSA fluorescence in aqueous solution observed in the presence of CdTe QDs infers that fluorescence resonance energy transfer is primarily responsible for the quenching phenomenon. Bimolecular quenching constant (k q ) determined at different temperatures and the time-resolved fluorescence data provide additional evidence for this. The binding stoichiometry and various thermodynamic parameters are evaluated by using the van 't Hoff equation. The analysis of the results suggests that the interaction between BSA and CdTe QDs is entropy driven and hydrophobic forces play a key role in the interaction. Binding of QDs significantly shortened the fluorescence lifetime of BSA which is one of the hallmarks of FRET. The effect of size of the QDs on the FRET parameters are discussed in the light of FRET parameters obtained. Copyright © 2016 John Wiley & Sons, Ltd.

Isoelectronic co-doping

DOEpatents

Mascarenhas, Angelo

2004-11-09

Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

van der Waals epitaxy of CdTe thin film on graphene

NASA Astrophysics Data System (ADS)

Mohanty, Dibyajyoti; Xie, Weiyu; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Zhang, Shengbai; Wang, Gwo-Ching; Lu, Toh-Ming; Bhat, Ishwara B.

2016-10-01

van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. In this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO2/Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that, despite the relatively small energy differences, the graphene buffer layer does pass epitaxial information to CdTe as the parallel epitaxy, obtained in the experiment, is energetically favored. The work paves a way for the growth of high quality CdTe film on a large area as well as on the amorphous substrates.

Fe(Ⅲ) ions enhanced catalytic properties of (BiO)2CO3 nanowires and mechanism study for complete degradation of xanthate.

PubMed

Guo, Yujiao; Cui, Kuixin; Hu, Mingyi; Jin, Shengming

2017-08-01

The wire-like Fe 3+ -doped (BiO) 2 CO 3 photocatalyst was synthesized by a hydrothermal method. The photocatalytic property of Fe 3+ -doped (BiO) 2 CO 3 nanowires was evaluated through degradation of sodium isopropyl xanthate under UV-visible light irradiation. The as-prepared Fe 3+ -doped (BiO) 2 CO 3 nanowires were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), UV-visible diffuse reflectance spectroscopy (UV-vis DRS), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) in detail. The results of XRD showed that the crystallinity of (BiO) 2 CO 3 nanowires decreased when Fe 3+ ions were introduced into the solution system. XPS results illustrated that xanthate could be absorbed on the surface of Fe 3+ -doped (BiO) 2 CO 3 nanowires to produce BiS bond at the beginning of the reaction, which could broaden the visible light absorption. FTIR spectra confirmed the formation of SO 4 2- after photocatalytic decomposition of xanthate solution. The Fe 3+ -doped (BiO) 2 CO 3 nanowires showed an enhanced photocatalytic activity for decomposition of xanthate due to the narrower band gap and larger BET surface area, comparing with pure (BiO) 2 CO 3 nanowires. By the results of UV-vis spectra of the solution and FTIR spectra of recycled Fe 3+ -doped (BiO) 2 CO 3 , the xanthate was oxidized completely into CO 2 and SO 4 2- . The photocatalytic degradation process of xanthate followed a pseudo-second-order kinetics model. The mechanism of enhanced photocatalytic activity was proposed as well. Copyright © 2017 Elsevier Ltd. All rights reserved.

Tuning the Electrical and Thermal Conductivities of Thermoelectric Oxides through Impurity Doping

NASA Astrophysics Data System (ADS)

Torres Arango, Maria A.

Waste heat and thermal gradients available at power plants can be harvested to power wireless networks and sensors by using thermoelectric (TE) generators that directly transform temperature differentials into electrical power. Oxide materials are promising for TE applications in harsh industrial environments for waste heat recovery at high temperatures in air, because they are lightweight, cheaply produced, highly efficient, and stable at high temperatures in air. Ca3Co4O9(CCO) with layered structure is a promising p-type thermoelectric oxide with extrapolated ZT value of 0.87 in single crystal form [1]. However the ZT values for the polycrystalline ceramics remain low of ˜0.1-0.3. In this research, nanostructure engineering approaches including doping and addition of nanoinclusions were applied to the polycrystalline CCO ceramic to improve the energy conversion efficiency. Polycrystalline CCO samples with various Bi doping levels were prepared through the sol-gel chemical route synthesis of powders, pressing and sintering of the pellets. Microstructure features of Bi doped ceramic bulk samples such as porosity, development of crystal texture, grain boundary dislocations and segregation of Bi dopants at various grain boundaries are investigated from microns to atomic scale. The results of the present study show that the Bi-doping is affecting both the electrical conductivity and thermal conductivity simultaneously, and the optimum Bi doping level is strongly correlated with the microstructure and the processing conditions of the ceramic samples. At the optimum doping level and processing conditions of the ceramic samples, the Bi substitution of Ca results in the increase of the electrical conductivity, decrease of the thermal conductivity, and improvement of the crystal texture. The atomic resolution Scanning Transmission Electron Microscopy (STEM) Z-contrast imaging and the chemistry analysis also reveal the Bi-segregation at grain boundaries of CCO

Identification of Nanocrystalline Inclusions in Bismuth-Doped Silica Fibers and Preforms.

PubMed

Iskhakova, Liudmila D; Milovich, Filipp O; Mashinsky, Valery M; Zlenko, Alexander S; Borisovsky, Sergey E; Dianov, Evgeny M

2016-10-01

The nature of nanocrystalline inclusions and dopant distribution in bismuth-doped silicate fibers and preforms are studied by scanning and transmission electron microscopy, and energy and wavelength-dispersive X-ray microanalysis. The core compositions are Bi:SiO2, Bi:Al2O3-SiO2, Bi:GeO2-SiO2, Bi:Al2O3-GeO2-SiO2, and Bi:P2O5-Al2O3-GeO2-SiO2. Nanocrystals of metallic Bi, Bi2O3, SiO2, GeO2, and Bi4(GeO4)3 are observed in these glasses. These inclusions can be the reason for the background optical loss in bismuth-doped optical fibers. The bismuth concentration of 0.0048±0.0006 at% is directly measured in aluminosilicate optical fibers with effective laser generation (slope efficiency of 27% at room temperature).

Quick and enhanced degradation of bisphenol A by activation of potassium peroxymonosulfate to SO4rad - with Mn-doped BiFeO3 nanoparticles as a heterogeneous Fenton-like catalyst

NASA Astrophysics Data System (ADS)

Soltani, Tayyebeh; Tayyebi, Ahmad; Lee, Byeong-Kyu

2018-05-01

Mn-doped BiFeO3 magnetic nanoparticles (BFO MNPs), namely BiFe1-xMnxO3 (x = 0.05 and 0.10), were successfully synthesized using a simple and novel sol-gel method and then applied as a highly efficient peroxymonosulfate (KHSO5, PMS) activation catalyst for the fast degradation of bisphenol A (BPA) from aqueous solution. The strong PMS activation ability of 10% Mn-doped BFO MNPs without any metal leaching due to the simultaneous effects of iron and manganese ions in the production of radical sulfate (SO4rad -), caused complete BPA degradation in 15 min, which was much faster than that using combinations with H2O2. TOC was reduced to 33%, 23% and 13% by PMS activated with BFO, 5 and 10% Mn doped BFO, respectively, which are 2.1, 2.6 and 3.15-fold lower than that same nanoparticles activated with H2O2. The photocatalytic mechanism of BPA with the simultaneous effects of iron and manganese ions in Mn-doped BFO was explored. The addition of KBrO3 and NaNO3 salts into Mn-doped BFO/PMS system reduced the complete BPA degradation time to 10 min, whereas Na2CO3 and NaCl salt addition retarded it, because salt addition can generate radical species that are either more or less active than SO4rad -.

Ion-beam-induced damage formation in CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rischau, C. W.; Schnohr, C. S.; Wendler, E.

2011-06-01

Damage formation in <111>- and <112>-oriented CdTe single crystals irradiated at room temperature and 15 K with 270 keV Ar or 730 keV Sb ions was investigated in situ using Rutherford backscattering spectroscopy (RBS) in channeling configuration. Defect profiles were calculated from the RBS spectra using the computer code DICADA and additional energy-dependent RBS measurements were performed to identify the type of defects. At both temperatures no formation of a buried amorphous layer was detected even after prolonged irradiation with several 10{sup 16} ions/cm{sup 2}. The fact that CdTe is not rendered amorphous even at 15 K suggests that themore » high resistance to amorphization is caused by the high ionicity of CdTe rather than thermal effects. The calculated defect profiles show the formation of a broad defect distribution that extends much deeper into the crystal than the projected range of the implanted ions at both temperatures. The post-range defects in CdTe thus do not seem to be of thermal origin either, but are instead believed to result from migration driven by the electronic energy loss.« less

Bismuth doping strategies in GeTe nanowires to promote high-temperature phase transition from rhombohedral to face-centered cubic structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jie; Huang, Rong; Wei, Fenfen

2014-11-17

The phase transition of Bi-doped (∼3 at. %) GeTe nanowires from a rhombohedral (R) to a face-centered cubic (C) structure was observed in in situ high-temperature X-ray diffraction. The promotion of high-temperature R-C phase transition by a doping approach was revealed. Ab initio energy calculations of doped GeTe at various Bi doping concentrations were performed to interpret the promoted temperature-induced phase transitions. Those results indicated that the total energy differences between R and C structures of doped GeTe decreased as Bi doping concentrations increased, which facilitated R-C phase transitions.

γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

PubMed Central

Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

2016-01-01

We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres. PMID:27440386

Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Young, T.; Sharma, P.; Kim, D. H.; Ha, Thai Duy; Juang, Jenh-Yih; Chu, Y.-H.; Seidel, J.; Nagarajan, V.; Yasui, S.; Itoh, M.; Sando, D.

2018-02-01

We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ˜50 nm thick grown on (001) LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T') phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T' phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T'-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

CdTe quantum-dot-modified ZnO nanowire heterostructure

NASA Astrophysics Data System (ADS)

Shahi, Kanchana; Singh, R. S.; Singh, Ajaya Kumar; Aleksandrova, Mariya; Khenata, Rabah

2018-03-01

The effect of CdTe quantum-dot (QD) decoration on the photoluminescence (PL) behaviour of ZnO nanowire (NW) array is presented in the present work. Highly crystalline and vertically 40-50 nm diameter range and 1 µm in length aligned ZnO NWs are synthesized using low-cost method. The crystallinity and morphology of the NWs are studied by scanning electron microscopy and X-ray powder diffraction methods.Optical properties of the nanowires are studied using photo-response and PL spectroscopy. CdTe QDs are successfully synthesized on ZnO nanowire surface by dip-coating method. ZnO NWs are sensitized with CdTe QDs characterized by transmission electron microscopy, energy-dispersive X-ray spectroscopy, and PL spectroscopy. The highly quenched PL intensity indicates the charge transfer at interface between CdTe QDs and ZnO NWs and is due to the formation of type-II heterostructure between QDs and NWs. Photo-response behaviour of heterostructure of the film is also been incorporated in the present work.

Unusual continuous dual absorption peaks in Ca-doped BiFeO3 nanostructures for broadened microwave absorption

NASA Astrophysics Data System (ADS)

Li, Zhong-Jun; Hou, Zhi-Ling; Song, Wei-Li; Liu, Xing-Da; Cao, Wen-Qiang; Shao, Xiao-Hong; Cao, Mao-Sheng

2016-05-01

Electromagnetic absorption materials have received increasing attention owing to their wide applications in aerospace, communication and the electronics industry, and multiferroic materials with both polarization and magnetic properties are considered promising ceramics for microwave absorption application. However, the insufficient absorption intensity coupled with the narrow effective absorption bandwidth has limited the development of high-performance multiferroic materials for practical microwave absorption. To address such issues, in the present work, we utilize interfacial engineering in BiFeO3 nanoparticles via Ca doping, with the purpose of tailoring the phase boundary. Upon Ca-substitution, the co-existence of both R3c and P4mm phases has been confirmed to massively enhance both dielectric and magnetic properties via manipulating the phase boundary and the destruction of the spiral spin structure. Unlike the commonly reported magnetic/dielectric hybrid microwave absorption composites, Bi0.95Ca0.05FeO3 has been found to deliver unusual continuous dual absorption peaks at a small thickness (1.56 mm), which has remarkably broadened the effective absorption bandwidth (8.7-12.1 GHz). The fundamental mechanisms based on the phase boundary engineering have been discussed, suggesting a novel platform for designing advanced multiferroic materials with wide applications.Electromagnetic absorption materials have received increasing attention owing to their wide applications in aerospace, communication and the electronics industry, and multiferroic materials with both polarization and magnetic properties are considered promising ceramics for microwave absorption application. However, the insufficient absorption intensity coupled with the narrow effective absorption bandwidth has limited the development of high-performance multiferroic materials for practical microwave absorption. To address such issues, in the present work, we utilize interfacial engineering in BiFeO3

Doping effect on ferromagnetism, ferroelectricity and dielectric constant in sol-gel derived Bi1-xNdxFe1-yCoyO3 nanoceramics

NASA Astrophysics Data System (ADS)

Das, Sananda; Sahoo, R. C.; Bera, K. P.; Nath, T. K.

2018-04-01

Doping at the post-transition metal site by trivalent rare-earth ions and 3d transition metal site by transition metal ions in perovskite lattice has observed a variety of magnetic and electronic orders with spatially correlated charge, spin and orbital degrees of freedom. Here, we report large ferromagnetism and enhanced dielectric constant (at ∼100 Hz) in chemically synthesized single phase multiferroic Bi1-xNdxFe1-yCoyO3 (x = 0, 0.10; y = 0, 0.10) nanoparticles (average particles size ∼45 nm). We have also examined the ferroelectric nature of our chemically synthesized samples. The Rietveld refinement of the XRD data reveals the structural symmetry breaking from distorted rhombohedral R3c structure of BiFeO3 to the triclinic P1 structure in Bi0.9Nd0.1Fe0.9Co0.1O3 (BNFCO) without having any iron rich impurity phase. The magnetization in these nanoceramics most likely originates from the coexistence of mixed valence states of Fe ion (Fe2+ and Fe3+). A high room temperature dielectric constant (∼1050) has been observed at 100 Hz of BNFCO sample. The frequency dependent anomalies near Neel temperature of antiferromagnet in temperature variation of dielectric study have been observed for all the doped and co-doped samples exhibiting typical characteristic of relaxor ferroelectrics. A spectacular enhancement of remanent magnetization MR (∼7.2 emu/gm) and noticeably large coercivity HC (∼17.4 kOe) at 5 K have been observed in this BNFCO sample. Such emergence of ferromagnetic ordering indicates the canting of the surface spins at the surface boundaries because of the reduction of particle size in nanodimension. We have also observed P-E hysteresis loops with a remanent polarization of 26 μC/cm2 and coercive field of 5.6 kV/cm of this sample at room temperature. From impedance spectroscopy study the estimated activation energy of 0.41 eV suggests the semiconducting nature of our nanoceramic BNCFO sample.

An experimental study of the local electronic structure of B-site gallium doped bismuth ferrite powders

NASA Astrophysics Data System (ADS)

Gholam, Turghunjan; Ablat, Abduleziz; Mamat, Mamatrishat; Wu, Rong; Aimidula, Aimierding; Bake, Muhammad Ali; Zheng, Lirong; Wang, Jiaou; Qian, Haijie; Wu, Rui; Ibrahim, Kurash

2017-08-01

The un-doped and gallium (Ga) doped multiferroic bismuth ferrite (BiFeO3) compounds were successfully synthesized by the hydrothermal technique. This is then followed by a series of detailed investigations into the influence of Ga doping on the structural, morphological, optical and magnetic properties of BiFe1 - xGaxO3 (0 ≤ x ≤ 0.15). X-ray diffraction (XRD) analyses reveal that B-site doping of Ga may lead to the transformation of its crystal structure from a rhombohedral with a space group of R3c to an orthorhombic with a space group of Pbnm phase. The scanning electron microscope (SEM) images show that doping with Ga causes a significant reduction in particle size, when compared to un-doped BiFeO3. X-ray absorption near-edge structure (XANES) spectra have also shown that as the substitution of Ga increases, the Fe K and Bi LIII-edge absorption spectra shift towards higher energy site. It also implies that doping of Ga affects the local structures of both Bi and Fe atoms. Distinct transmission band fluctuations, as shown by Fourier transform infrared (FT-IR) spectra, can provide significant evidence for a transformation in crystal structure, following the increase of Ga concentration. The magnetization hysteresis measurements show that the magnetization decreases when Ga content is x ≥ 0.05. Such a phenomenon mainly stems from the substitution of Fe for an excessive amount of Ga, resulting in reduction of both valence fluctuations and the magnetization in the BiFe1 - xGaxO3 system.

Enhanced ferroelectric polarization and magnetization in BiFe{sub 1−x}Sc{sub x}O{sub 3} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, C.A.; Pang, H.Z.; Zhang, A.H.

2015-10-15

Highlights: • Single phase Sc doped BFO ceramics were successfully fabricated. • Dielectric constant and magnetization are enhanced in doped BFO system. • Polarization first increases and then decreases in doped BFO system. • M{sub r} of 0.0105 emu/g and P{sub r} of 16.1 μC/cm{sup 2} were revealed simultaneously at x = 0.01. - Abstract: Multiferroic BiFe{sub 1−x}Sc{sub x}O{sub 3} ceramics with x = 0.00–0.10 were synthesized by rapid liquid phase sintering. The influences of Sc doping on the crystalline structures, dielectric, ferroelectric, and magnetic behaviors of BiFeO{sub 3} ceramics were explored. The X-ray diffraction and the Raman spectrometric analysismore » revealed that all the samples are nearly single phase of rhombohedral structure with the incorporation of Sc ions into BiFeO{sub 3}. With increase doping concentration of x, the dielectric constant, dielectric loss, and remnant polarization for the doped BiFeO{sub 3} increase first and then drop down with further rise of x. A saturated ferroelectric polarization can be achieved at a small amount of Sc doping concentration (x < 0.03), with a optimized remnant polarization of 17.6 μC/cm{sup 2} at x = 0.03. Meanwhile, the magnetization is also slightly increased by introducing Sc dopant, with a maximum remnant magnetization of 0.0105 emu/g at x = 0.01. These results indicate that BiFeO{sub 3} ceramics with small amounts of Sc-doping may be promising for applications in magnetoelectric devices.« less

Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B

DOE PAGES

Burton, George L.; Diercks, David R.; Perkins, Craig L.; ...

2017-07-01

Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth ofmore » films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.« less

Co-doping of (Bi(0.5)Na(0.5))TiO(3): secondary phase formation and lattice site preference of Co.

PubMed

Schmitt, V; Staab, T E M

2012-11-14

Bismuth sodium titanate (Bi(0.5)Na(0.5))TiO(3) (BNT) is considered to be one of the most promising lead-free alternatives to piezoelectric lead zirconate titanate (PZT). However, the effect of dopants on the material has so far received little attention from an atomic point of view. In this study we investigated the effects of cobalt-doping on the formation of additional phases and determined the preferred lattice site of cobalt in BNT. The latter was achieved by comparing the measured x-ray absorption near-edge structure (XANES) spectra to numerically calculated spectra of cobalt on various lattice sites in BNT. (Bi(0.5)Na(0.5))TiO(3) + x mol% Co (x = 0.0, 0.5, 1.0, 2.6) was synthesized via solid state reaction. As revealed by SEM backscattering images, a secondary phase formed in all doped specimens. Using both XRD and SEM-EDX, it was identified as Co(2)TiO(4) for dopant levels >0.5 mol%. In addition, a certain amount of cobalt was incorporated into BNT, as shown by electron probe microanalysis. This amount increased with increasing dopant levels, suggesting that an equilibrium forms together with the secondary phase. The XANES experiments revealed that cobalt occupies the octahedral B-site in the BNT perovskite lattice, substituting Ti and promoting the formation of oxygen vacancies in the material.

Ferroelectric behavior and reproducible Bi-stable resistance switching property in K-doped ZnO thin films as candidate for application in non-volatile memories

NASA Astrophysics Data System (ADS)

Lee, J. W.; Subramaniam, N. G.; Kang, T. W.; Shon, Yoon; Kim, E. K.

2015-05-01

Potassium-doped ZnO thin films electrodeposited on indium tin oxide (ITO) coated glass substrates exhibited ferroelectric behavior with a remnant polarization of 0.2 μC/cm2. Especially, wave forms showing the applied input voltage Vi and output voltage Vo were obtained for Al/ZnO:K/ITO structure. It exhibits a superposition of Vi (input) and Vo (output) signal from Al/ZnO:K/ITO structure with a clear phase shift between the two wave forms which again confirms that the observed ferroelectric hysteresis curve is not related to leaky dielectric materials. The current-voltage characteristics of Al/ZnO:K/ITO structures measured for several cycles revealed bi-stable switching characteristics. The reproducible bi-stable switching characteristics for the mentioned structures had good retention in one particular resistance state. Around one order of switching was realized between low and high resistance states. The switching property thought to be polarization induced originating out from the ferroelectric properties of the potassium doped ZnO thin film. The switching between ZnO:K/ITO interface is assumed to be critical for stability in switching for several cycles. Possible application of this structure in non-volatile memories is explored.

Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole.

PubMed

Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

2015-04-15

Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL(-1) (3.4 ng mL(-1)) and the quantitative determination range was 0-2.8 μg mL(-1) with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results. Copyright © 2015 Elsevier B.V. All rights reserved.

Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole

NASA Astrophysics Data System (ADS)

Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

2015-04-01

Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL-1 (3.4 ng mL-1) and the quantitative determination range was 0-2.8 μg mL-1 with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

Scanning tunneling spectroscopic (STS) studies of magnetically doped MBE-grown topological insulators (TIs)

NASA Astrophysics Data System (ADS)

Chu, Hao; Teague, Marcus; Chen, Chien-Chang; Woodward, Nicholas; Yeh, Nai-Chang; Kou, Xufeng; He, Liang; Lang, Murong; Wang, Kang; Caltech Collaboration; UCLA Collaboration

2013-03-01

We conduct STS studies on MBE-grown heterostructures of non-magnetic TI (Bi2Se3) with a range of thicknesses (d = 1, 3, 5, 7 quintuple layers, QL) on top of 7-QL magnetically doped TI (Cr-doped Bi2Se3) . For d = 1 and 3-QL, a spatially homogeneous magnetism-induced surface gap (as large as about 150 meV for d = 1-QL) is observed at 77 K, whereas gapless Dirac spectra are found for d = 5 and 7-QL, suggesting that the effective magnetic length for Cr-doped Bi2Se3 is approximately 4 ~ 5-QL. These findings are further corroborated by ARPES and bulk electrical transport measurements. The magnetism-induced surface gap differs from those found in pure Bi2Se3 and (Bi0.5Sb0.5)2 Te3 films of thicknesses smaller than 6-QL, because the latter are due to overlaps of wave functions between the surface and interface layers, which lead to Rashba-like spin-orbit splitting and spin-preserving quasiparticle interference wave-vectors. In contrast, STS studies of TIs with magnetism-induced surface gap do not yield any quasiparticle interferences for energies within the bulk Bi2Se3 gap. Finally, comparative STS studies of pure and magnetically doped TIs in high magnetic fields will be discussed. This work was supported by DARPA.

Synthesis and characterization of colloidal CdTe nanocrystals

NASA Astrophysics Data System (ADS)

Semendy, Fred; Jaganathan, Gomatam; Dhar, Nibir; Trivedi, Sudhir; Bhat, Ishwara; Chen, Yuanping

2008-08-01

We synthesized CdTe nano crystals (NCs) in uniform sizes and in good quality as characterized by photoluminescence (PL), AFM, and X-ray diffraction. In this growth procedure, CdTe nano-crystal band gap is strongly dependent on the growth time and not on the injection temperature or organic ligand concentration. This is very attractive because of nano-crystal size can be easily controlled by the growth time only and is very attractive for large scale synthesis. The color of the solution changes from greenish yellow to light orange then to deep orange and finally grayish black to black over a period of one hour. This is a clear indication of the gradual growth of different size (and different band gap) of CdTe nano-crystals as a function of the growth time. In other words, the size of the nano-crystal and its band gap can be controlled by adjusting the growth time after injection of the tellurium. The prepared CdTe NCs were characterized by absorption spectra, photoluminescence (PL), AFM and X-ray diffraction. Measured absorption maxima are at 521, 560, 600 and 603 nm corresponding to band gaps of 2.38, 2.21,2,07 and 2.04 eV respectively for growth times of 15, 30, 45 and 60 minutes. From the absorption data nano-crystal growth size saturates out after 45 minutes. AFM scanning of these materials indicate that the size of these particles is between 4 - 10 nm in diameter for growth time of 45 minutes. XD-ray diffraction indicates that these nano crystals are of cubic zinc blende phase. This paper will present growth and characterization data on CdTe nano crystals for various growth times.

Influence of defects and dopants on the photovoltaic performance of Bi 2S 3: First-principles insights

DOE PAGES

Han, Dan; Du, Mao -Hua; Dai, Chen -Min; ...

2017-02-23

Bi 2S 3 has attracted extensive attention recently as a light-absorber, sensitizer or electron acceptor material in various solar cells. Using first-principles calculations, we find that the photovoltaic efficiency of Bi 2S 3 solar cells is limited by its intrinsic point defects, i.e., both S vacancy and S interstitial can have high concentration and produce deep defect levels in the bandgap, leading to non-radiative recombination of electron–hole carriers and reduced minority carrier lifetime. Unexpectedly most of the intrinsic defects in Bi 2S 3, including even the S interstitial, act as donor defects, explaining the observed n-type conductivity and also causingmore » the high p-type conductivity impossible thermodynamically. Doping in Bi 2S 3 by a series of extrinsic elements is studied, showing that most of the dopant elements such as Cu, Br and Cl make the material even more n-type and only Pb doping makes it weakly p-type. Based on this, we propose that the surface region of n-type Bi 2S 3 nanocrystals in p-PbS/n-Bi 2S 3 nano-heterojunction solar cells may be type-inverted into p-type due to Pb doping, with a buried p–n junction formed in the Bi 2S 3 nanocrystals, which provides a new explanation to the longer carrier lifetime and higher efficiency. Lastly, considering the relatively low conduction band and high n-type conductivity, we predict that Cu, Br and Cl doped Bi 2S 3 may be an ideal n-type electron acceptor or counter electrode material, while the performance of Bi 2S 3 as a light-absorber or sensitizer material is intrinsically limited.« less

Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications

PubMed Central

Lee, Juwon; Subramaniam, Nagarajan Ganapathi; Agnieszka Kowalik, Iwona; Nisar, Jawad; Lee, Jaechul; Kwon, Younghae; Lee, Jaechoon; Kang, Taewon; Peng, Xiangyang; Arvanitis, Dimitri; Ahuja, Rajeev

2015-01-01

The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p-symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temperature ferromagnetism. ZnBixO1−x thin films are grown using the pulsed laser deposition technique. The room temperature ferromagnetism finds its origin in the holes introduced by the Bi doping and the p-p coupling between Bi and the host atoms. A sizeable magnetic moment is measured by means of x-ray magnetic circular dichroism at the O K-edge, probing directly the spin polarization of the O(2p) states. This result is in agreement with the theoretical predictions and inductive magnetometry measurements. Ab initio calculations of the electronic and magnetic structure of ZnBixO1−x at various doping levels allow to trace the origin of the ferromagnetic character of this material. It appears, that the spin-orbit energy of the heavy ion Bi stabilizes the ferromagnetic phase. Thus, ZnBixO1−x doped with a heavy non-ferromagnetic element, such as Bi, is a credible example of a candidate material for a new class of compounds for spintronics applications, based on the spin polarization of the p states. PMID:26592564

Synthesis, crystal structure, photodegradation kinetics and photocatalytic activity of novel photocatalyst ZnBiYO4.

PubMed

Cui, Yanbing; Luan, Jingfei

2015-03-01

ZnBiYO4 was synthesized by a solid-state reaction method for the first time. The structural and photocatalytic properties of ZnBiYO4 were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and UV-Vis diffuse reflectance. ZnBiYO4 crystallized with a tetragonal spinel structure with space group I41/A. The lattice parameters for ZnBiYO4 were a=b=11.176479Å and c=10.014323Å. The band gap of ZnBiYO4 was estimated to be 1.58eV. The photocatalytic activity of ZnBiYO4 was assessed by photodegradation of methyl orange under visible light irradiation. The results showed that ZnBiYO4 had higher catalytic activity compared with N-doped TiO2 under the same experimental conditions using visible light irradiation. The photocatalytic degradation of methyl orange with ZnBiYO4 or N-doped TiO2 as catalyst followed first-order reaction kinetics, and the first-order rate constant was 0.01575 and 0.00416 min(-1) for ZnBiYO4 and N-doped TiO2, respectively. After visible light irradiation for 220 min with ZnBiYO4 as catalyst, complete removal and mineralization of methyl orange were observed. The reduction of total organic carbon, formation of inorganic products, SO4(2-) and NO3-, and evolution of CO2 revealed the continuous mineralization of methyl orange during the photocatalytic process. The intermediate products were identified using liquid chromatography-mass spectrometry. The ZnBiYO4/(visible light) photocatalysis system was found to be suitable for textile industry wastewater treatment and could be used to solve other environmental chemical pollution problems. Copyright © 2015. Published by Elsevier B.V.

An Investigation of Dielectric, Piezoelectric Properties and Microstructures of Bi0.5Na0.5TiO3-BaTiO3-Bi0.5K0.5TiO3 Lead-Free Piezoelectric Ceramics Doped with K2AlNbO5 Compound

NASA Astrophysics Data System (ADS)

Liu, Gang; Jiang, Wentao; Liu, Kaihua; Liu, Xiaokui; Song, Chunlin; Yan, Yan; Jin, Li

2017-08-01

The effect of K2AlNbO5 compound acting as both donor and accepter on the phase, microstructures and electrical properties of the 0.9362(Bi0.5Na0.5)TiO3-0.0637BaTiO3-0.02(Bi0.5K0.5)TiO3 [(1- x)(0.9163BNT-0.0637BT-0.02BKT)- x(K2AlNbO5)] (BNKBT-1000 xKAN) ternary lead-free piezoelectric ceramics was systematically investigated. When doping content of K2AlNbO5 was varied from 0 to 0.009, the BNKBT-1000 xKAN ceramics showed a single perovskite structure, and the phase structure transferred from a rhombohedral-tetragonal coexistent morphotropic phase boundaries zone to a tetragonal zone. The x-ray photoelectron spectroscopy analysis indicated that the chemical valence of the Nb and Al element are 5+ and 3+, respectively. Strong relaxor characteristics were revealed by the temperature-dependent dielectric properties of the ceramics. Typical square polarization-electric field ( P- E) hysteresis loops were observed in the samples with doping content lower than 0.005. However, with further increasing the doping content ( x = 0.007 and 0.009), round P- E hysteresis loops were observed due to the high conductivity of these samples. Moreover, when the doping content was less than 0.005, the ceramic samples exhibited good piezoelectric properties. Specially, when the doping content was 0.001, the piezoelectric constant d 33 and electromechanical coupling coefficient k p of the sample were 197 pC/N and 22%, respectively. However, further addition would deteriorate both the dielectric and piezoelectric properties.

APT mass spectrometry and SEM data for CdTe solar cells

DOE PAGES

Li, Chen; Paudel, Naba R.; Yan, Yanfa; ...

2016-03-16

Atom probe tomography (APT) data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl 2 treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl 2-treated CdTe solar cell are presented. Scanning electron microscopy (SEM) data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM) electron beam induced current (EBIC) are also presented. As a result, these data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solarmore » cell, preparation of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.« less

Using a double-doping strategy to improve physical properties of nanostructured CdO films

NASA Astrophysics Data System (ADS)

Aydin, R.; Sahin, B.

2018-06-01

In this present study nanostructured dually doped samples of Cd1‑x‑yMgxMyO (M: Sn, Pb, Bi) are synthesized by SILAR method. The effects of the mono and dual doping on the structural, morphological and optoelectronic characteristics of CdO nanoparticles are examined. The SEM images verify that deposited CdO films are nano-sized. Also the SEM computations demonstrated that the morphological surface structures of the films were influenced from the Mg mono doping and (Mg, Sn), (Mg, Pb) and (Mg, Bi) dual doping. The XRD designs specified that all the CdO samples have polycrystalline structure exhibiting cubic crystal form with dominant peaks of (111) and (220). The results display that Mg and (Mg, Sn), (Mg, Pb) and (Mg, Bi) ions were successfully doped into CdO film matrix. The UV spectroscopy results show that the optical energy band gap of the CdO films, ranging from 2.21 to 2.66 eV, altered with the dopant materials.

Role of point defects in bipolar fatigue behavior of Bi(Mg{sub 1/2}Ti{sub 1/2})O{sub 3} modified (Bi{sub 1/2}K{sub 1/2})TiO{sub 3}-(Bi{sub 1/2}Na{sub 1/2})TiO{sub 3} relaxor ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Nitish, E-mail: nitishkumar.iitk@gmail.com; Ansell, Troy Y.; Cann, David P.

Lead-free Bi(Mg{sub 1/2}Ti{sub 1/2})O{sub 3}-(Bi{sub 1/2}K{sub 1/2})TiO{sub 3}-(Bi{sub 1/2}Na{sub 1/2})TiO{sub 3} (BMT-BKT-BNT) ceramics have been shown to exhibit large electromechanical strains under high electric fields along with negligible fatigue under strong electric fields. To investigate the role of point defects on the fatigue characteristics, the composition 5BMT-40BKT-55BNT was doped to incorporate acceptor and donor defects on the A and B sites by adjusting the Bi/Na and Ti/Mg stoichiometries. All samples had pseudo-cubic symmetries based on x-ray diffraction, typical of relaxors. Dielectric measurements showed that the high and low temperature phase transitions were largely unaffected by doping. Acceptor doping resulted inmore » the observation of a typical ferroelectric-like polarization with a remnant polarization and strain hysteresis loops with significant negative strain. Donor-doped compositions exhibited characteristics that were indicative of an ergodic relaxor phase. Fatigue measurements were carried out on all of the compositions. While the A-site acceptor-doped composition showed a small degradation in maximum strain after 10{sup 6} cycles, the other compositions were essentially fatigue free. Impedance measurements were used to identify the important conduction mechanisms in these compositions. As expected, the presence of defects did not strongly influence the fatigue behavior in donor-doped compositions owing to the nature of their reversible field-induced phase transformation. Even for the acceptor-doped compositions, which had stable domains in the absence of an electric field at room temperature, there was negligible degradation in the maximum strain due to fatigue. This suggests that either the defects introduced through stoichiometric variations do not play a prominent role in fatigue in these systems or it is compensated by factors like decrease in coercive field, an increase in ergodicity, symmetry change, or other factors.« less

Primary Phase Field of the Pb-Doped 2223 High-Tc Superconductor in the (Bi, Pb)-Sr-Ca-Cu-O System

PubMed Central

Wong-Ng, W.; Cook, L. P.; Kearsley, A.; Greenwood, W.

1999-01-01

Both liquidus and subsolidus phase equilibrium data are of central importance for applications of high temperature superconductors in the (Bi, Pb)-Sr-Ca-Cu-O system, including material synthesis, melt processing and single crystal growth. The subsolidus equilibria of the 110 K high-Tc Pb-doped 2223 ([Bi, Pb], Sr, Ca, Cu) phase and the location of the primary phase field (crystallization field) have been determined in this study. For the quantitative determination of liquidus data, a wicking technique was developed to capture the melt for quantitative microchemical analysis. A total of 29 five-phase volumes that include the 2223 phase as a component was obtained. The initial melt compositions of these volumes range from a mole fraction of 7.3 % to 28.0 % for Bi, 11.3 % to 27.8 % for Sr, 1.2 % to 19.4 % for Pb, 9.8 % to 30.8 % for Ca, and 17.1 % to 47.0 % for Cu. Based on these data, the crystallization field for the 2223 phase was constructed using the convex hull technique. A section of this “volume” was obtained by holding two components of the composition at the median value, allowing projection on the other three axes to show the extent of the field.

The Structural, Photocatalytic Property Characterization and Enhanced Photocatalytic Activities of Novel Photocatalysts Bi2GaSbO7 and Bi2InSbO7 during Visible Light Irradiation

PubMed Central

Luan, Jingfei; Shen, Yue; Li, Yanyan; Paz, Yaron

2016-01-01

In order to develop original and efficient visible light response photocatalysts for degrading organic pollutants in wastewater, new photocatalysts Bi2GaSbO7 and Bi2InSbO7 were firstly synthesized by a solid-state reaction method and their chemical, physical and structural properties were characterized. Bi2GaSbO7 and Bi2InSbO7 were crystallized with a pyrochlore-type structure and the lattice parameter of Bi2GaSbO7 or Bi2InSbO7 was 10.356497 Å or 10.666031 Å. The band gap of Bi2GaSbO7 or Bi2InSbO7 was estimated to be 2.59 eV or 2.54 eV. Compared with nitrogen doped TiO2, Bi2GaSbO7 and Bi2InSbO7, both showed excellent photocatalytic activities for degrading methylene blue during visible light irradiation due to their narrower band gaps and higher crystallization perfection. Bi2GaSbO7 showed higher catalytic activity compared with Bi2InSbO7. The photocatalytic degradation of methylene blue followed by the first-order reaction kinetics and the first-order rate constant was 0.01470 min−1, 0.00967 min−1 or 0.00259 min−1 with Bi2GaSbO7, Bi2InSbO7 or nitrogen doped TiO2 as a catalyst. The evolution of CO2 and the removal of total organic carbon were successfully measured and these results indicated continuous mineralization of methylene blue during the photocatalytic process. The possible degradation scheme and pathway of methylene blue was also analyzed. Bi2GaSbO7 and Bi2InSbO7 photocatalysts both had great potential to purify textile industry wastewater. PMID:28773922

Improved electron transfer and plasmonic effect in dye-sensitized solar cells with bi-functional Nb-doped TiO2/Ag ternary nanostructures.

PubMed

Park, Jung Tae; Chi, Won Seok; Jeon, Harim; Kim, Jong Hak

2014-03-07

TiO2 nanoparticles are surface-modified via atom transfer radical polymerization (ATRP) with a hydrophilic poly(oxyethylene)methacrylate (POEM), which can coordinate to the Ag precursor, i.e. silver trifluoromethanesulfonate (AgCF3SO3). Following the reduction of Ag ions, a Nb2O5 doping process and calcination at 450 °C, bi-functional Nb-doped TiO2/Ag ternary nanostructures are generated. The resulting nanostructures are characterized by energy-filtering transmission electron microscopy (EF-TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy. The dye-sensitized solar cell (DSSC) based on the Nb-doped TiO2/Ag nanostructure photoanode with a polymerized ionic liquid (PIL) as the solid polymer electrolyte shows an overall energy conversion efficiency (η) of 6.9%, which is much higher than those of neat TiO2 (4.7%) and Nb-doped TiO2 (5.4%). The enhancement of η is mostly due to the increase of current density, attributed to the improved electron transfer properties including electron injection, collection, and plasmonic effects without the negative effects of charge recombination or problems with corrosion. These properties are supported by intensity modulated photocurrent/voltage spectroscopy (IMPS/IMVS) and incident photon-to-electron conversion efficiency (IPCE) measurements.

Band gap modulation in magnetically doped low-defect thin films of (Bi1-xSbx)2 Te3 with minimized bulk carrier concentration

NASA Astrophysics Data System (ADS)

Maximenko, Yulia; Scipioni, Kane; Wang, Zhenyu; Katmis, Ferhat; Steiner, Charles; Weis, Adam; van Harlingen, Dale; Madhavan, Vidya

Topological insulators Bi2Te3 and Sb2Te3 are promising materials for electronics, but both are naturally prone to vacancies and anti-site defects that move the Fermi energy onto the bulk bands. Fabricating (Bi1-xSbx)2 Te3 (BST) with the tuned x minimizes point defects and unmasks topological surface states by reducing bulk carriers. BST thin films have shown topological surface states and quantum anomalous Hall effect. However, different studies reported variable Sb:Bi ratios used to grow an undoped BST film. Here, we develop a reliable way to grow defect-free subnanometer-flat BST thin films having the Fermi energy tuned to the Dirac point. High-resolution scanning tunneling microscopy (STM) and Landau level spectroscopy prove the importance of crystallinity and surface roughness-not only Sb:Bi ratio-for the final bulk carrier concentration. The BST thin films were doped with Cr and studied with STM with atomic resolution. Counterintuitively, Cr density is anticorrelated with the local band gap due to Cr's antiferromagnetic order. We analyze the correlations and report the relevant band gap values. Predictably, high external magnetic field compromises antiferromagnetic order, and the local band gap increases. US DOE DE-SC0014335; Moore Found. GBMF4860; F. Seitz MRL.

Tailoring Mater-Bi properties by the use of a biowaste-derived additive

NASA Astrophysics Data System (ADS)

Cerruti, Pierfrancesco; Santagata, Gabriella; Gomez d'Ayala, Giovanna; Malinconico, Mario; Ambrogi, Veronica; Carfagna, Cosimo; Persico, Paola

2010-06-01

In this work, a polyphenol-containing extract from winery bio-waste (EP) has been used as additive to tailor Mater-Bi properties. EP was able to efficiently modulate both polymer processing and mechanical, thermal and biodegradation properties. EP decreased the melt viscosity, behaved as a Mater-Bi plasticizer and delayed the Mater-Bi crosslinking process occurring upon thermal aging. Finally, the biodisintegration rate of doped Mater-Bi decreased, thus indicating that EP interfered with the microbial digestion of the polymer films.

CdTe quantum dots for an application in the life sciences

NASA Astrophysics Data System (ADS)

Thi Dieu Thuy, Ung; Toan, Pham Song; Chi, Tran Thi Kim; Duy Khang, Dinh; Quang Liem, Nguyen

2010-12-01

This report highlights the results of the preparation of semiconductor CdTe quantum dots (QDs) in the aqueous phase. The small size of a few nm and a very high luminescence quantum yield exceeding 60% of these materials make them promisingly applicable to bio-medicine labeling. Their strong, two-photon excitation luminescence is also a good characteristic for biolabeling without interference with the cell fluorescence. The primary results for the pH-sensitive CdTe QDs are presented in that fluorescence of CdTe QDs was used as a proton sensor to detect proton flux driven by adenosine triphosphate (ATP) synthesis in chromatophores. In other words, these QDs could work as pH-sensitive detectors. Therefore, the system of CdTe QDs on chromatophores prepared from the cells of Rhodospirillum rubrum and the antibodies against the beta-subunit of F0F1-ATPase could be a sensitive detector for the avian influenza virus subtype A/H5N1.

Transparent ohmic contacts for solution-processed, ultrathin CdTe solar cells

DOE PAGES

Kurley, J. Matthew; Panthani, Matthew G.; Crisp, Ryan W.; ...

2016-12-19

Recently, solution-processing became a viable route for depositing CdTe for use in photovoltaics. Ultrathin (~500 nm) solar cells have been made using colloidal CdTe nanocrystals with efficiencies exceeding 12% power conversion efficiency (PCE) demonstrated by using very simple device stacks. Further progress requires an effective method for extracting charge carriers generated during light harvesting. Here, we explored solution-based methods for creating transparent Ohmic contacts to the solution-deposited CdTe absorber layer and demonstrated molecular and nanocrystal approaches to Ohmic hole-extracting contacts at the ITO/CdTe interface. Furthermore, we used scanning Kelvin probe microscopy to further show how the above approaches improved carriermore » collection by reducing the potential drop under reverse bias across the ITO/CdTe interface. Other methods, such as spin-coating CdTe/A 2CdTe 2 (A = Na, K, Cs, N 2H 5), can be used in conjunction with current/light soaking to improve PCE further.« less

Ionic liquid assisted microwave synthesis route towards color-tunable luminescence of lanthanide- doped BiPO 4

DOE PAGES

Cybinska, Joanna; Lorbeer, Chantal; Mudring, Anja -Verena

2015-07-08

Ln 3+-doped (Ln=Sm, Eu, Tb, Dy) nanoparticles of BiPO 4 with a particle size below 10 nm were synthesized in a straightforward manner from the appropriate mixture of the respective metal acetates and the task-specific ionic liquids choline or butylammonium dihydrogen-phosphate by conversion in a laboratory microwave (120 °C, 10 min). The ionic liquid acts not only as a solvent and microwave susceptor, but also as the reaction partner and nanoparticle stabilizer. The materials were thoroughly characterized not only with respect to their optical properties but also by PXRD, FT-IR, TEM techniques. Furthermore, depending on the lanthanide, the nanomaterial showsmore » intense luminescence of different colors such as: orange (Sm 3+), red (Eu 3+), green (Tb 3+) or even white (Dy 3+).« less

Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source

NASA Astrophysics Data System (ADS)

Iso, Kenji; Murakami, Hisashi; Koukitu, Akinori

2017-07-01

Thermodynamic analysis of CdTe growth using cost-effective metallic Cd and dialkyl telluride was performed. The major vapor species at source zone in equilibrium were gaseous Cd for the group-II precursor, and Te2 and H2Te for the group-VI precursors. The driving force for the CdTe deposition was still positive even at 650 °C. This indicates that CdTe formation from gaseous Cd can proceed thermodynamically. Furthermore, the calculations showed that CdTe decomposes at higher temperature and increasing the II/VI ratio increases the limit of the growth temperature, which coincides with the experimental results.

Lifshitz topological transitions, induced by doping and deformation in single-crystal bismuth wires

NASA Astrophysics Data System (ADS)

Nikolaeva, A. A.; Konopko, L. A.; Huber, T. E.; Kobylianskaya, A. K.; Para, Gh. I.

2017-02-01

The features associated with the manifestation of Lifshitz electron topological transitions (ETT) in glass-insulated bismuth wires upon qualitative changes to the topology of the Fermi surface are investigated. The variation of the energy spectrum parameters was implemented by doping Bi with an acceptor impurity Sn and using elastic strain of up to 2%, relative to the elongation in the weakly-doped p-type Bi wires. Pure and doped glass-insulated single-crystal bismuth with different diameters and (1011) orientations along the axis were prepared by the Ulitovsky liquid phase casting method. For the first time, ETT-induced anomalies are observed along the temperature dependences of the thermoemf α(T) as triple-changes of the α sign (given heavy doping of Bi wires with an acceptor impurity Sn). The concentration and energy position of the Σ-band given a high degree of bismuth doping with Sn was assessed using the Shubnikov-de Haas effect oscillations, which were detected both from L-electrons and from T-holes in magnetic fields of up to 14 T. It is shown that the Lifshitz electron-topological transitions with elastic deformation of weakly-doped p-type Bi wires are accompanied by anomalies along the deformation dependences of the thermoemf at low temperatures. The effect is interpreted in terms of the formation of a selective scattering channel of L-carriers into the T-band with a high density of states, which is in good agreement with existing theoretical ETT models.

Strain-tuned enhancement of ferromagnetic TC to 176 K in Sm-doped BiMnO3 thin films and determination of magnetic phase diagram.

PubMed

Choi, Eun-Mi; Kleibeuker, Josée E; MacManus-Driscoll, Judith L

2017-03-03

BiMnO 3 is a promising multiferroic material but it's ferromagnetic T C is well below room temperature and the magnetic phase diagram is unknown. In this work, the relationship between magnetic transition temperature (T C ) and the substrate induced (pseudo-) tetragonal distortion (ratio of out-of-plane to in-plane lattice parameters, c/a) in BiMnO 3 thin films, lightly doped to optimize lattice dimensions, was determined. For c/a > 0.99, hidden antiferromagnetism was revealed and the magnetisation versus temperature curves showed a tail behaviour, whereas for c/a < 0.99 clear ferromagnetism was observed. A peak T C of up to 176 K, more than 70 K higher than for bulk BiMnO 3 , was achieved through precise strain tuning. The T C was maximised for strong tensile in-plane strain which produced weak octahedral rotations in the out-of-plane direction, an orthorhombic-like structure, and strong ferromagnetic coupling.

Structural and multiferroic properties of Ba2+ doped BiFeO3 nanoparticles synthesized via sol-gel method

NASA Astrophysics Data System (ADS)

Shisode, M. V.; Kharat, Prashant B.; Bhoyar, Dhananjay N.; Vinayak, Vithal; Babrekar, M. K.; Jadhav, K. M.

2018-05-01

Ba2+ doped Bismuth ferrite nanoparticles having general formula Bi1-xBaxFeO3 (where, x = 0.00 and 0.20) were successfully synthesized by sol gel method, using nitrates as a starting material. Ethylene glycol was used as a solvent. The synthesized powder was sintered at 650°C for 4 hours to obtain pure phase BFO. Leaching with dilute nitric acid (HNO3) and distilled water (H2O) is done to remove the impurities. The structural, morphological, magnetic and ferroelectric properties were systematically investigated using standard characterization techniques like X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FE-SEM) and room temperature magnetic behavior of the samples was studied using pulse field hysteresis loop tracer technique showing increase in saturation magnetizaion. P-E loop confirms the ferroelectric behavior of prepared nanoparticles. The coexistence of ferromagnetic and ferroelectric hysteresis loops in BFO and Bi0.8Ba0.2FeO3 nanoparticles samples at room temperature; it indicates that the samples are potential candidates for information storage and spintronics devices. The increase in magnetic properties may be important for practical application at room temperature.

Thermoelectric and mechanical properties of multi-walled carbon nanotube doped Bi0.4Sb1.6Te3 thermoelectric material

NASA Astrophysics Data System (ADS)

Ren, Fei; Wang, Hsin; Menchhofer, Paul A.; Kiggans, James O.

2013-11-01

Since many thermoelectrics are brittle in nature with low mechanical strength, improving their mechanical properties is important to fabricate devices such as thermoelectric power generators and coolers. In this work, multiwalled carbon nanotubes (CNTs) were incorporated into polycrystalline Bi0.4Sb1.6Te3 through powder processing, which increased the flexural strength from 32 MPa to 90 MPa. Electrical and thermal conductivities were both reduced in the CNT containing materials, leading to unchanged figure of merit. Dynamic Young's and shear moduli of the composites were lower than the base material, while the Poisson's ratio was not affected by CNT doping.

Microwave assisted synthesis of sheet-like Cu/BiVO{sub 4} and its activities of various photocatalytic conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xi; College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar 161006; Li, Li, E-mail: qqhrll@163.com

2015-09-15

The Cu/BiVO{sub 4} photocatalyst with visible-light responsivity was prepared by the microwave-assisted hydrothermal method. The phase structures, chemical composition and surface physicochemical properties were well-characterized via X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV–vis diffuse reflectance absorption (UV–vis/DRS), scanning electron microscopy (SEM), and N{sub 2} adsorption–desorption tests. Results indicate that the crystal structure of synthetic composite materials is mainly monoclinic scheelite BiVO{sub 4}, which is not changed with the increasing doping amount of Cu. In addition, the presence of Cu not only enlarges the range of the composite materials under the visible-light response, but also increases the BET value significantly.more » Compared to pure BiVO{sub 4}, 1% Cu/BiVO{sub 4}-160 performs the highest photocatalytic activity to degrade methylene blue under the irradiation of ultraviolet, visible and simulated sunlight. In addition, the capture experiments prove that the main active species was superoxide radicals during photocatalytic reaction. Moreover, the 1% Cu/BiVO{sub 4}-160 composite shows good photocatalytic stability after three times of recycling. - Graphical abstract: A series of BiVO{sub 4} with different amounts of Cu doping were prepared by the microwave-assisted method, moreover, which performed the high photocatalytic activities to degrade methylene blue under multi-mode. - Highlights: • A series of Cu/BiVO{sub 4} with different amounts of Cu doping were prepared by microwave-assisted synthesis. • The morphologies of as-samples were different with the amount of Cu doping increased. • Compared with pure BiVO{sub 4}, as-Cu/BiVO{sub 4} showed stronger absorption in the visible light region obviously. • 1% Cu/BiVO{sub 4}-160 performed the high photocatalytic activities to degrade methylene blue under multi-mode. • OH{sup •} and h{sup +} both play important roles in the photocatalytic

Unusual continuous dual absorption peaks in Ca-doped BiFeO3 nanostructures for broadened microwave absorption.

PubMed

Li, Zhong-Jun; Hou, Zhi-Ling; Song, Wei-Li; Liu, Xing-Da; Cao, Wen-Qiang; Shao, Xiao-Hong; Cao, Mao-Sheng

2016-05-21

Electromagnetic absorption materials have received increasing attention owing to their wide applications in aerospace, communication and the electronics industry, and multiferroic materials with both polarization and magnetic properties are considered promising ceramics for microwave absorption application. However, the insufficient absorption intensity coupled with the narrow effective absorption bandwidth has limited the development of high-performance multiferroic materials for practical microwave absorption. To address such issues, in the present work, we utilize interfacial engineering in BiFeO3 nanoparticles via Ca doping, with the purpose of tailoring the phase boundary. Upon Ca-substitution, the co-existence of both R3c and P4mm phases has been confirmed to massively enhance both dielectric and magnetic properties via manipulating the phase boundary and the destruction of the spiral spin structure. Unlike the commonly reported magnetic/dielectric hybrid microwave absorption composites, Bi0.95Ca0.05FeO3 has been found to deliver unusual continuous dual absorption peaks at a small thickness (1.56 mm), which has remarkably broadened the effective absorption bandwidth (8.7-12.1 GHz). The fundamental mechanisms based on the phase boundary engineering have been discussed, suggesting a novel platform for designing advanced multiferroic materials with wide applications.

Nd and Ru co-doped bismuth titanate polycrystalline thin films with improved ferroelectric properties

NASA Astrophysics Data System (ADS)

Sahoo, Kishor Kumar; Singh Rajput, Shailendra; Gupta, Rajeev; Roy, Amritendu; Garg, Ashish

2018-02-01

We report the ferroelectric properties of pulsed laser deposited thin films of Nd and Ru co-doped bismuth titanate (Bi4-x Nd x Ti3-y Ru y O12). Structural analysis of the as-grown films, using x-ray diffraction, showed a single-phase formation with a polycrystalline structure. In comparison to un-doped and Nd-doped films, ferroelectric measurements on co-doped films demonstrated improved properties with remnant polarization (P r) ~ 12.5 µC cm-2 and an enhanced electrical fatigue life for Bi3.25Nd0.75Ti2.8Ru0.20O12 films. The enhancement in remanent polarization is attributed to microscopic changes, such as local structural distortion and the modification of the dynamical/effective charges on constituent ions due to chemical strain upon simultaneous Bi- (A) and Ti- (B) site doping with Nd and Ru, which has a far stronger effect than only A-site doping with Nd. Piezoresponse force microscopy further confirmed the polar structure and domain switching at nanoscale. The films exhibit small yet finite magnetization at 10 K resulting from strain.

Electrical conduction and thermoelectric properties of perovskite-type BaBi1-xSbxO3

NASA Astrophysics Data System (ADS)

Yasukawa, Masahiro; Shiga, Yuta; Kono, Toshio

2012-06-01

To elucidate the thermoelectric properties at high temperatures, the electrical conductivity and Seebeck coefficient were measured at temperatures between 423 K and 973 K for perovskite-type ceramics of BaBi1-xSbxO3 solid solutions with x=0.0-0.5. All the ceramics exhibit p-type semiconducting behaviors and electrical conduction is attributed to hopping of small polaronic holes localized on the pentavalent cations. Substitution of Bi with Sb causes the electrical conductivity σ and cell volume to decrease, but the Seebeck coefficient S to increase, suggesting that the Sb atoms are doped as Sb5+ and replace Bi5+, reducing 6s holes conduction from Bi5+(6s0) to Bi3+ (6s2). The thermoelectric power factor S2σ has values of 6×10-8-3×10-5 W m-1 K-2 in the measured temperature range, and is maximized for an Sb-undoped BaBiO3-δ, but decreases upon Sb doping due to the decreased σ values.

CdTe quantum dots as a novel biosensor for Serratia marcescens and Lipopolysaccharide.

PubMed

Ebrahim, Sh; Reda, M; Hussien, A; Zayed, D

2015-01-01

The main objective of this work is to synthesize CdTe quantum dots (QDs) conjugated with Concanavalin A (Con A) as a novel biosensor to be selective and specific for the detection of Lipopolysaccharide (LPS). In addition, the conjugated CdTe QDs-Con A was used as fluorescence labels to capture Serratia marcescens bacteria through the recognition between CdTe QDs-Con A and LPS of S. marcescens. The appearance of the lattice plans in the high resolution transmission electron photograph indicated a high crystalline with an average size of 4-5 nm for the CdTe QDs. The results showed that the relative fluorescence intensity of CdTe QDs-Con A decreased linearly with LPS concentration in the range from 10 to 90 fg/mL and with correlation coefficient (R(2)) equal to 0.9713. LPS surrounding the S. marcescens bacteria was bound to the CdTe QDs-Con A and leads to quenching of PL intensity. It was found that a good linear relationship between the relative PL intensity and the logarithmic of cell population of S. marcescens in range from 1×10 to 1×10(6) CFU/mL at pH 7 with R(2) of 0.952 was established. Copyright © 2015 Elsevier B.V. All rights reserved.

Advanced processing of CdTe pixel radiation detectors

NASA Astrophysics Data System (ADS)

Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

2017-12-01

We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

Synthesis, Structural Property, Photophysical Property, Photocatalytic Property of Novel ZnBiErO4 under Visible Light Irradiation

PubMed Central

Zhuang, Yan

2018-01-01

A novel photocatalyst ZnBiErO4 was firstly synthesized by solid-state reaction method and its structural and photocatalytic properties were analyzed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and UV-Vis diffuse reflectance. The results demonstrated that ZnBiErO4 crystallized with tetragonal crystal structure with space group I41/A. The lattice parameters for ZnBiErO4 were proved to be a = b = 10.255738 Å and c = 9.938888 Å. The band gap of ZnBiErO4 was estimated to be about 1.69 eV. Compared with nitrogen doped TiO2, ZnBiErO4 showed excellent photocatalytic activities for degrading methyl blue during visible light irradiation. The photocatalytic degradation of methyl blue with ZnBiErO4 or N-doped TiO2 as catalyst followed the first-order reaction kinetics. Moreover, the apparent first-order rate constant of ZnBiErO4 or N-doped TiO2 was 0.01607 min−1 or 0.00435 min−1. The reduction of total organic carbon, formation of inorganic products, such as SO42− and NO3− and the evolution of CO2 revealed the continuous mineralization of methyl blue during the photocatalytic process. ZnBiErO4 photocatalyst had great potential to purify textile industry wastewater. PMID:29463016

Influence of the layer parameters on the performance of the CdTe solar cells

NASA Astrophysics Data System (ADS)

Haddout, Assiya; Raidou, Abderrahim; Fahoume, Mounir

2018-03-01

Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1D. The ZnO: Al film shows a high efficiency than SnO2:F. Moreover, the thinner window layer and lower defect density of CdS films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field (BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.

Robust antiferromagnetism preventing superconductivity in pressurized (Ba 0.61K 0.39)Mn 2Bi 2

DOE PAGES

Gu, Dachun; Dai, Xia; Le, Congcong; ...

2014-12-05

BaMn 2Bi 2 possesses an iso-structure of iron pnictide superconductors and similar antiferromagnetic (AFM) ground state to that of cuprates, therefore, it receives much more attention on its properties and is expected to be the parent compound of a new family of superconductors. When doped with potassium (K), BaMn 2Bi 2 undergoes a transition from an AFM insulator to an AFM metal. Consequently, it is of great interest to suppress the AFM order in the K-doped BaMn 2Bi 2 with the aim of exploring the potential superconductivity. Here, we report that external pressure up to 35.6 GPa cannot suppress themore » AFM order in the K-doped BaMn 2Bi 2 to develop superconductivity in the temperature range of 300 K–1.5 K, but induces a tetragonal (T) to an orthorhombic (OR) phase transition at ~20 GPa. Theoretical calculations for the T and OR phases, on basis of our high-pressure XRD data, indicate that the AFM order is robust in the pressurized Ba 0.61K 0.39Mn 2Bi 2. Utlimately, both of our experimental and theoretical results suggest that the robust AFM order essentially prevents the emergence of superconductivity.« less

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

NASA Astrophysics Data System (ADS)

Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

2015-03-01

Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

Slurry spin coating of thin film yttria stabilized zirconia/gadolinia doped ceria bi-layer electrolytes for solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Kim, Hyun Joong; Kim, Manjin; Neoh, Ke Chean; Han, Gwon Deok; Bae, Kiho; Shin, Jong Mok; Kim, Gyu-Tae; Shim, Joon Hyung

2016-09-01

Thin ceramic bi-layered membrane comprising yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC) is fabricated by the cost-effective slurry spin coating technique, and it is evaluated as an electrolyte of solid oxide fuel cells (SOFCs). It is demonstrated that the slurry spin coating method is capable of fabricating porous ceramic films by adjusting the content of ethyl-cellulose binders in the source slurry. The porous GDC layer deposited by spin coating under an optimal condition functions satisfactorily as a cathode-electrolyte interlayer in the test SOFC stack. A 2-μm-thick electrolyte membrane of the spin-coated YSZ/GDC bi-layer is successfully deposited as a dense and stable film directly on a porous NiO-YSZ anode support without any interlayers, and the SOFC produces power output over 200 mW cm-2 at 600 °C, with an open circuit voltage close to 1 V. Electrochemical impedance spectra analysis is conducted to evaluate the performance of the fuel cell components in relation with the microstructure of the spin-coated layers.

Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface

PubMed Central

Sun, Ce; Paulauskas, Tadas; Sen, Fatih G.; Lian, Guoda; Wang, Jinguo; Buurma, Christopher; Chan, Maria K. Y.; Klie, Robert F.; Kim, Moon J.

2016-01-01

Extended defects are of considerable importance in determining the electronic properties of semiconductors, especially in photovoltaics (PVs), due to their effects on electron-hole recombination. We employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries using wafer bonding. Atomic-resolution scanning transmission electron microscopy (STEM) of a [1–10]/(110) 4.8° tilt grain boundary reveals that the interface is composed of three distinct types of Lomer dislocations. Geometrical phase analysis is used to map strain fields, while STEM and density functional theory (DFT) modeling determine the atomic structure at the interface. The electronic structure of the dislocation cores calculated using DFT shows significant mid-gap states and different charge-channeling tendencies. Cl-doping is shown to reduce the midgap states, while maintaining the charge separation effects. This report offers novel avenues for exploring grain boundary effects in CdTe-based solar cells by fabricating controlled bicrystal interfaces and systematic atomic-scale analysis. PMID:27255415

Specific Effects of Oxygen Molecule and Plasma on Thin-Film Growth of Y-Ba-Cu-O and Bi-Sr-(Ca)-Cu-O Systems

NASA Astrophysics Data System (ADS)

Endo, Tamio; Horie, Munehiro; Hirate, Naoki; Itoh, Katsutoshi; Yamada, Satoshi; Tada, Masaki; Itoh, Ken-ichi; Sugiyama, Morihiro; Sano, Shinji; Watabe, Kinji

1998-07-01

Thin films of a-oriented YBa2Cu3Ox (YBCO), Ca-doped c-oriented Bi2(Sr,Ca)2CuOx and nondoped c-oriented Bi2Sr2CuOx (Bi2201) were prepared at low temperatures by ion beam sputtering with supply of oxygen molecules or plasma. The plasma enhances crystal growth of the a-YBCO and Ca-doped Bi2201 phases. This can be interpreted in terms of their higher surface energies. The growth and quality of nondoped Bi2201 are improved with the supply of oxygen molecules. This particular result could be interpreted by the collision process between the oxygen molecules and the sputtered particles.

Revealing the Cu(2+) ions localization at low symmetry Bi sites in photorefractive Bi12GeO20 crystals doped with Cu and V by high frequency EPR.

PubMed

Nistor, Sergiu V; Stefan, Mariana; Goovaerts, Etienne; Ramaz, François; Briat, Bernard

2015-10-01

The sites of incorporation of Cu(2+) impurity ions in Bi12GeO20 single crystals co-doped with copper and vanadium have been investigated by electron paramagnetic resonance (EPR). While the X-band EPR spectra consist of a simple broad (ΔB ∼50 mT) line with anisotropic lineshape, the W-band EPR spectra exhibit well resolved, strongly anisotropic lines, due to transitions within the 3d(9)-(2)D ground manifold of the Cu(2+) ions. The most intense group of lines, attributed to the dominant Cu(2+)(I) center, displays a characteristic four components hyperfine structure for magnetic field orientations close to a 〈110〉 direction. The g and A tensor main axes are very close to one of the 12 possible sets of orthogonal 〈1-10〉, 〈00-1〉 and 〈110〉 crystal directions. Several less intense lines, with unresolved hyperfine structure and similar symmetry properties, mostly overlapped by the Cu(2+)(I) spectrum, were attributed to Cu(2+)(II) centers. The two paramagnetic centers are identified as substitutional Cu(2+) ions at Bi(3+) sites with low C1 symmetry, very likely resulting from different configurations of neighboring charge compensating defects. Copyright © 2015 Elsevier Inc. All rights reserved.

High-resolution CdTe detectors with application to various fields (Conference Presentation)

NASA Astrophysics Data System (ADS)

Takeda, Shin'ichiro; Orita, Tadashi; Arai, Yasuo; Sugawara, Hirotaka; Tomaru, Ryota; Katsuragawa, Miho; Sato, Goro; Watanabe, Shin; Ikeda, Hirokazu; Takahashi, Tadayuki; Furenlid, Lars R.; Barber, H. Bradford

2016-10-01

High-quality CdTe semiconductor detectors with both fine position resolution and high energy resolution hold great promise to improve measurement in various hard X-ray and gamma-ray imaging fields. ISAS/JAXA has been developing CdTe imaging detectors to meet scientific demands in latest celestial observation and severe environmental limitation (power consumption, vibration, radiation) in space for over 15 years. The energy resolution of imaging detectors with a CdTe Schottky diode of In/CdTe/Pt or Al/CdTe/Pt contact is a highlight of our development. We can extremely reduce a leakage current of devises, meaning it allows us to supply higher bias voltage to collect charges. The 3.2cm-wide and 0.75mm-thick CdTe double-sided strip detector with a strip pitch of 250 µm has been successfully established and was mounted in the latest Japanese X-ray satellite. The energy resolution measured in the test on ground was 2.1 keV (FWHM) at 59.5 keV. The detector with much finer resolution of 60 µm is ready, and it was actually used in the FOXSI rocket mission to observe hard X-ray from the sun. In this talk, we will focus on our research activities to apply space sensor technologies to such various imaging fields as medical imaging. Recent development of CdTe detectors, imaging module with pinhole and coded-mask collimators, and experimental study of response to hard X-rays and gamma-rays are presented. The talk also includes research of the Compton camera which has a configuration of accumulated Si and CdTe imaging detectors.

CDTE alloys and their application for increasing solar cell performance

NASA Astrophysics Data System (ADS)

Swanson, Drew E.

Cadmium Telluride (CdTe) thin film solar is the largest manufactured solar cell technology in the United States and is responsible for one of the lowest costs of utility scale solar electricity at a purchase agreement of $0.0387/kWh. However, this cost could be further reduced by increasing the cell efficiency. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum PV manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The record efficiency of CdTe solar cells is lower than fundamental limitations due to a significant deficit in voltage. It has been modeled that there are two potential methods of decreasing this voltage deficiency. The first method is the incorporation of a high band gap film at the back contact to induce a conduction-band barrier that can reduce recombination by reflecting electrons from the back surface. The addition of a Cd1-x MgxTe (CMT) layer at the back of a CdTe solar cell should induce this desired offset and reflect both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cells current and the reduction of forward current will increase the cells voltage. To have the optimal effect, CdTe must have reasonable carrier lifetimes and be fully depleted. To achieve this experimentally, CdTe layers have been grown sufficiently thin to help produce a fully depleted cell. A variety of measurements including performance curves, transmission electron microscopy, x

The next generation CdTe technology- Substrate foil based solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferekides, Chris

The main objective of this project was the development of one of the most promising Photovoltaic (PV) materials CdTe into a versatile, cost effective, and high throughput technology, by demonstrating substrate devices on foil substrates using high throughput fabrication conditions. The typical CdTe cell is of the superstrate configuration where the solar cell is fabricated on a glass superstrate by the sequential deposition of a TCO, n-type heterojunction partner, p-CdTe absorber, and back contact. Large glass modules are heavy and present significant challenges during manufacturing (uniform heating, etc.). If a substrate CdTe cell could be developed (the main goal ofmore » this project) a roll-to-toll high throughput technology could be developed.« less

BiVO{sub 4} photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Haibo; Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin; Freudenberg, Norman

2016-04-15

Photoactive bismuth vanadate (BiVO{sub 4}) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO{sub 4} films were investigated. Phase-pure monoclinic BiVO{sub 4} films, which are more photoactive than the tetragonal BiVO{sub 4} phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO{sub 4} films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO{sub 4} film thickness, the photocurrent densities (without a catalyst or a blocking layer ormore » a hole scavenger) exceeded 1.2 mA/cm{sup 2} at a potential of 1.23 V{sub RHE} under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO{sub 4} films opens new possibilities for the fabrication of large-scale devices for water splitting.« less

Two-Dimensional Superconductivity Emerged at Monatomic Bi(2-) Square Net in Layered Y2O2Bi via Oxygen Incorporation.

PubMed

Sei, Ryosuke; Kitani, Suguru; Fukumura, Tomoteru; Kawaji, Hitoshi; Hasegawa, Tetsuya

2016-09-07

Discovery of layered superconductors such as cuprates and iron-based compounds has unveiled new science and compounds. In these superconductors, quasi-two-dimensional layers including transition metal cations play principal role in the superconductivity via carrier doping by means of aliovalent-ion substitution. Here, we report on a two-dimensional superconductivity at 2 K in ThCr2Si2-type layered oxide Y2O2Bi possessing conducting monatomic Bi(2-) square net, possibly associated with an exotic superconductivity. The superconductivity emerges only in excessively oxygen-incorporated Y2O2Bi with expanded inter-net distance, in stark contrast to nonsuperconducting pristine Y2O2Bi reported previously. This result suggests that the element incorporation into hidden interstitial site could be an alternative approach to conventional substitution and intercalation methods for search of novel superconductors.

808-nm diode-pumped dual-wavelength passively Q-switched Nd:LuLiF4 laser with Bi-doped GaAs

NASA Astrophysics Data System (ADS)

Li, S. X.; Li, T.; Li, D. C.; Zhao, S. Z.; Li, G. Q.; Hang, Y.; Zhang, P. X.; Li, X. Y.; Qiao, H.

2015-09-01

Diode-pumped CW and passively Q-switched Nd:LuLiF4 lasers with stable, synchronous dual-wavelength operations near 1047 and 1053 nm were demonstrated for the first time. The maximal CW output power of 821 mW was obtained at an incident pump power of 6.52 W. Employing high quality Bi-doped GaAs as saturable absorber, stable dual-wavelength Q-switched operation was realized. Under 6.52 W incident pump power, the minimal pulse duration of 1.5 ns, the largest single pulse energy of 11.32 μJ, and the highest peak power of 7.25 kW were achieved.

Effects of an in vacancy on local distortion of fast phase transition in Bi-doped In3SbTe2

NASA Astrophysics Data System (ADS)

Choi, Minho; Choi, Heechae; Kim, Seungchul; Ahn, Jinho; Kim, Yong Tae

2017-12-01

Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy ( V 3- In) and higher concentration of the V 3- In in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V 3- In and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages.

Room temperature synthesis and highly enhanced visible light photocatalytic activity of porous BiOI/BiOCl composites nanoplates microflowers.

PubMed

Dong, Fan; Sun, Yanjuan; Fu, Min; Wu, Zhongbiao; Lee, S C

2012-06-15

This research represents a highly enhanced visible light photocatalytic removal of 450 ppb level of nitric oxide (NO) in air by utilizing flower-like hierarchical porous BiOI/BiOCl composites synthesized by a room temperature template free method for the first time. The facile synthesis method avoids high temperature treatment, use of organic precursors and production of undesirable organic byproducts during synthesis process. The result indicated that the as-prepared BiOI/BiOCl composites samples were solid solution and were self-assembled hierarchically with single-crystal nanoplates. The aggregation of the self-assembled nanoplates resulted in the formation of 3D hierarchical porous architecture containing tri-model mesopores. The coupling to BiOI with BiOCl led to down-lowered valence band (VB) and up-lifted conduction band (CB) in contrast to BiOI, making the composites suitable for visible light excitation. The BiOI/BiOCl composites samples exhibited highly enhanced visible light photocatalytic activity for removal of NO in air due to the large surface areas and pore volume, hierarchical structure and modified band structure, exceeding that of P25, BiOI, C-doped TiO(2) and Bi(2)WO(6). This research results could provide a cost-effective approach for the synthesis of porous hierarchical materials and enhancement of photocatalyst performance for environmental and energetic applications owing to its low cost and easy scaling up. Copyright © 2012 Elsevier B.V. All rights reserved.

Magneto-optical Kerr effect in Cr-doped (Bi,Sb)2Te3 Thin Films

NASA Astrophysics Data System (ADS)

Pan, Yu; Yao, Bing; Richardella, Anthony; Kandala, Abhinav; Fraleigh, Robert; Lee, Joon Sue; Samarth, Nitin; Yeats, Andrew; Awschalom, David D.

2014-03-01

When a three-dimensional (3D) topological insulator (TI) is interfaced with magnetism, the breaking of time reversal symmetry results in new phenomena such as the recently observed quantum anomalous Hall effect [C.-Z. Zhang et al., Science340, 167 (2013)]. Thus motivated, we use the polar-mode magneto-optical Kerr effect (MOKE) to probe the temperature- and field-dependent magnetization in molecular beam epitaxy grown Cr-doped thin films of the 3D TI (Bi,Sb)2Te3. Square MOKE hysteresis loops observed at low temperatures indicate robust ferromagnetism with a perpendicular magnetic anisotropy and Curie temperature that varies from ~ 5 K to ~ 150 K, depending on sample details. A key question is the nature of the ferromagnetism: is it a carrier-mediated mechanism, Van Vleck mechanism or due to extrinsic clusters? We address this issue by varying the magnetic ion concentration and carrier density via sample composition as well as by varying the chemical potential by back gating. Finally, we use spatially-resolved MOKE to image the magnetization in these samples. Supported by ONR and DARPA.

Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

NASA Astrophysics Data System (ADS)

Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

2016-04-01

Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

Effect of cadmium telluride quantum dots on the dielectric and electro-optical properties of ferroelectric liquid crystals.

PubMed

Kumar, A; Biradar, A M

2011-04-01

We present here the dielectric and electro-optical studies of cadmium telluride quantum dots (CdTe QDs) doped ferroelectric liquid crystals (FLCs). It has been observed that the doping of CdTe QDs not only induced a pronounced memory effect but also affected the physical parameters of FLC material (LAHS19). The modifications in the physical parameters and memory effect of LAHS19 are found to depend on the concentration ratio of CdTe QDs. The lower concentration of CdTe QDs (1-3 wt%) enhanced the values of spontaneous polarization and rotational viscosity of LAHS19 material but did not favor the memory effect, whereas a higher concentration of CdTe QDs (>5 wt%) degraded the alignment of LAHS19 material. The doping of ∼5 wt% of CdTe QDs is found to be the most suitable for achieving good memory effect without significantly affecting the material parameters. ©2011 American Physical Society

Thermoelectric Properties of Cu-doped Bi0.4Sb1.6Te3 Prepared by Hot Extrusion

NASA Astrophysics Data System (ADS)

Jung, Woo-Jin; Kim, Il-Ho

2018-06-01

Cu0.003Bi0.4Sb1.6Te3 alloys were prepared by using encapsulated melting and hot extrusion (HE). The hot-extruded specimens had the relative average density of 98%. The ( 00l) planes were preferentially oriented parallel to the extrusion direction, but the specimens showed low crystallographic anisotropy with low orientation factors. The specimens were hot-extruded at 698 K, and they showed excellent mechanical properties with a Vickers hardness of 76 Hv and a bending strength of 59 MPa. However, as the HE temperature increased, the mechanical properties degraded due to grain growth. The hot-extruded specimens showed positive Seebeck coefficients, indicating that the specimens have p-type conduction. These specimens exhibited negative temperature dependences of electrical conductivity, and thus behaved as degenerate semiconductors. The Seebeck coefficient reached the maximum value at 373 K and then decreased with increasing temperature due to intrinsic conduction. Cu-doped specimens exhibited high power factors due to relatively higher electrical conductivities and Seebeck coefficients than those of undoped specimens. A thermal conductivity of 1.00 Wm-1 K-1 was obtained at 373 K for Cu0.003Bi0.4Sb1.6Te3 hot-extruded at 723 K. A maximum dimensionless figure of merit, ZT max = 1.05, and an average dimensionless figure of merit, ZT ave = 0.98, were achieved at 373 K.

Tests of UFXC32k chip with CdTe pixel detector

NASA Astrophysics Data System (ADS)

Maj, P.; Taguchi, T.; Nakaye, Y.

2018-02-01

The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

High Curie temperature Bi(1.85)Mn(0.15)Te3 nanoplates.

PubMed

Cheng, Lina; Chen, Zhi-Gang; Ma, Song; Zhang, Zhi-dong; Wang, Yong; Xu, Hong-Yi; Yang, Lei; Han, Guang; Jack, Kevin; Lu, Gaoqing Max; Zou, Jin

2012-11-21

Bi(1.85)Mn(0.15)Te(3) hexagonal nanoplates with a width of ~200 nm and a thickness of ~20 nm were synthesized using a solvothermal method. According to the structural characterization and compositional analysis, the Mn(2+) and Mn(3+) ions were found to substitute Bi(3+) ions in the lattice. High-level Mn doping induces significant lattice distortion and decreases the crystal lattice by 1.07% in the a axis and 3.18% in the c axis. A high ferromagnetic state with a Curie temperature of ~45 K is observed in these nanoplates due to Mn(2+) and Mn(3+) ion doping, which is a significant progress in the field of electronics and spintronics.

Performance of Ge-Sb-Bi-Te-B Recording Media for Phase-Change Optical Disks

NASA Astrophysics Data System (ADS)

Lee, Chain-Ming; Yen, Wen-Shin; Liu, Ren-Haur; Chin, Tsung-Shune

2001-09-01

We investigated the physical properties of GeSbBiTeB materials and examined the feasibility for phase change recording. The studied compositions were Ge4Sb0.5Bi0.5Te5 and Ge2Sb1.5Bi0.5Te5 with B doping. The coexistence of Bi and B atoms into both Ge4SbTe5 and Ge2Sb2Te5 lattice maintains single fcc structure without phase separation. The Bi substitution shows benefits in decreasing crystallization temperature and activation energy, however the reflectivity is slightly reduced. 3 With small amount addition of boron about 1 at.%, the reflectivity can be increased. 2 Conventional 4-layer structure of digital versatile disk-random access memory (DVD-RAM) 2.6 GB format was used to prepare the disks for dynamic characterization and overwrite cyclability evaluations. The disk with Ge4Sb0.5Bi0.5Te5(B) recording layer shows large noise fluctuation and low overwrite erase ratio, suggesting that the crystallization speed is still insufficient. While the disk with Ge2Sb1.5Bi0.5Te5(B) recording layer shows lower writing and erasing powers, stable noise level and high overwrite erase ratio, indicating the capability for DVD-RAM applications. The effect of B doping was verified to enhance the signal amplitude and modulation.

Infiltrated bunch of solitons in Bi-doped frequency-shifted feedback fibre laser operated at 1450 nm

PubMed Central

Rissanen, Joona; Korobko, Dmitry A.; Zolotovsky, Igor O.; Melkumov, Mikhail; Khopin, Vladimir F.; Gumenyuk, Regina

2017-01-01

Mode-locked fibre laser as a dissipative system is characterized by rich forms of soliton interaction, which take place via internal energy exchange through noisy background in the presence of dispersion and nonlinearity. The result of soliton interaction was either stationary-localized or chaotically-oscillated soliton complexes, which have been shown before as stand-alone in the cavity. Here we report on a new form of solitons complex observed in Bi-doped mode-locked fibre laser operated at 1450 nm. The solitons are arranged in two different group types contemporizing in the cavity: one pulse group propagates as bound solitons with fixed phase relation and interpulse position eventuated in 30 dB spectrum modulation depth; while the other pulses form a bunch with continuously and chaotically moving solitons. The article describes both experimental and theoretical considerations of this effect. PMID:28281677

Intense 2.7 µm emission and structural origin in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass.

PubMed

Guo, Yanyan; Li, Ming; Hu, Lili; Zhang, Junjie

2012-01-15

The 2.7 μm emission properties in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass were investigated in the present Letter. An intense 2.7 μm emission in Er3+-doped bismuthate glass was observed. It is found that Er3+-doped bismuthate glass possesses high spontaneous transition probability A (65.26 s(-1)) and large 2.7 μm emission cross section σ(em) (9.53×10(-21) cm2) corresponding to the stimulated emission of Er3+:4I11/2→4I13/2 transition. The emission characteristic and energy transfer process upon excitation of a conventional 980 nm laser diode in bismuthate glass were analyzed. Additionally, the structure of bismuthate glass was analyzed by the Raman spectrum. The advantageous spectroscopic characteristics of Er3+ single-doped bismuthate glass together with the prominent thermal property indicate that bismuthate glass might become an attractive host for developing solid-state lasers around 2.7 μm.

Influence of substrate temperature on structural, morphological, optical and electrical properties of Bi-doped MnInS4 thin films prepared by nebuliser spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Kennedy, A.; Senthil Kumar, V.; Pradeev Raj, K.

2017-11-01

Bismuth (Bi)-doped manganese indium sulphide (MnInS4) thin films were deposited on heated glass substrates using an aqueous solution of MnCl2, InCl3, (NH2)2CS and BiCl3 by the common nebuliser spray pyrolysis technique. The thin films were grown at various substrate temperatures ranging from 250 to 400 °C with a constant spray time (5 min). The present work aims to study the effect of substrate temperature on the structural, optical, photoluminescence and electrical properties of the grown thin films using various techniques like X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive spectrum (EDS), UV-Vis absorption spectroscopy, photoluminescence spectra (PL) and four probe methods. The XRD pattern reveals that the Bi-doped MnInS4 thin films were polycrystalline in nature with a cubic spinel structure whose particle size varies between 8.2 and 23.5 nm. From the FE-SEM micrographs, due to the change in the substrate temperature, shapes such as spherical, needle-shaped and T-shaped grains were observed throughout the surface of the films. The energy dispersive analysis spectrum (EDS) shows the presence of Mn, In, S and Bi in the film grown at 250 °C. It is interesting to note that the structural homogeneity and crystallinity of the film is improved due to the decrease in the absorption coefficient (α) and extinction coefficient (K) with an increase in substrate temperature. Also, with an increase in the substrate temperature, the calculated band gap energy was found to decrease from 1.87 to 1.59 eV. From the PL spectra, several intense peaks corresponding to blue, green, yellow, orange and red band emissions were observed in the wavelength region of 350-650 nm. Moreover as the intensity of the peak increases with increase in the substrate temperature, the crystallinity of the material of the film greatly improves concomitant with minimum strain and defect states. From the electrical studies, the electrical conductivity

Superconductivity and weak localization of PdxBi2Se3 whiskers at low temperatures

NASA Astrophysics Data System (ADS)

Druzhinin, Anatoly; Ostrovskii, Igor; Khoverko, Yuriy; Rogacki, Krzysztof; Liakh-Kaguy, Natalia

2018-02-01

The temperature dependencies of Bi2Se3 whiskers' resistance with Pd doping concentration of (1÷2)×1019 cm-3 where measured in the temperature range 1.5÷77 K. At temperature 5.3 K a sharp drop in the whisker resistance was found. The observed effect is likely connected with the contribution of two processes such as the electron localization and superconductivity at temperatures below 5.3 K. The magnetoresistance in the n-type conductivity Bi2Se3 whiskers with different doping concentration of palladium that correspond to metal side of the metal-insulator transition was studied at low temperatures and magnetic field 0÷10 T. The whisker magnetoconductance is considered in the framework of the weak antilocalization model and connected with subsurface layers of Bi2Se3 whiskers.

A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

NASA Astrophysics Data System (ADS)

Liu, Yan; Shen, Qihui; Yu, Dongdong; Shi, Weiguang; Li, Jixue; Zhou, Jianguang; Liu, Xiaoyang

2008-06-01

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

Annealing-Induced Bi Bilayer on Bi2Te3 Investigated via Quasi-Particle-Interference Mapping.

PubMed

Schouteden, Koen; Govaerts, Kirsten; Debehets, Jolien; Thupakula, Umamahesh; Chen, Taishi; Li, Zhe; Netsou, Asteriona; Song, Fengqi; Lamoen, Dirk; Van Haesendonck, Chris; Partoens, Bart; Park, Kyungwha

2016-09-27

Topological insulators (TIs) are renowned for their exotic topological surface states (TSSs) that reside in the top atomic layers, and hence, detailed knowledge of the surface top atomic layers is of utmost importance. Here we present the remarkable morphology changes of Bi2Te3 surfaces, which have been freshly cleaved in air, upon subsequent systematic annealing in ultrahigh vacuum and the resulting effects on the local and area-averaging electronic properties of the surface states, which are investigated by combining scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and Auger electron spectroscopy (AES) experiments with density functional theory (DFT) calculations. Our findings demonstrate that the annealing induces the formation of a Bi bilayer atop the Bi2Te3 surface. The adlayer results in n-type doping, and the atomic defects act as scattering centers of the TSS electrons. We also investigated the annealing-induced Bi bilayer surface on Bi2Te3 via voltage-dependent quasi-particle-interference (QPI) mapping of the surface local density of states and via comparison with the calculated constant-energy contours and QPI patterns. We observed closed hexagonal patterns in the Fourier transform of real-space QPI maps with secondary outer spikes. DFT calculations attribute these complex QPI patterns to the appearance of a "second" cone due to the surface charge transfer between the Bi bilayer and the Bi2Te3. Annealing in ultrahigh vacuum offers a facile route for tuning of the topological properties and may yield similar results for other topological materials.

Sn-doped Bi1.1Sb0.9Te2S: An ideal bulk topological insulator

NASA Astrophysics Data System (ADS)

Kushwaha, Sk; Pletikosic, I.; Liang, T.; Gyenis, A.; Lapidus, Sh; Tian, Y.; Zhao, H.; Burch, Ks; Lin, J.; Wang, W.; Ji, H.; Fedorov, Av; Yazdani, A.; Ong, Np; Valla, T.; Cava, Rj

In the recent decade the topological insulators have been of significant importance for the condensed matter community. However, so far no real materials could fulfill all the requirements. Here, we present the Bridgman growth of slightly Sn-doped Bi1.1Sb0.9Te2S (with bulk band gap of 350) single crystals and characterization by electronic transport, STM and ARPES. The results on the crystals exhibit an intrinsic semiconducting behavior with the Fermi level and Dirac energies lie in bulk gap and high quality 2D surface states are detangled from the bulk states, and it fulfils all the requirements to be an ideal topological insulator. ARO MURI W911NF-12-1-0461; ARO W911NF-12-1-0461; MRSEC NSF-DMR-1420541; LBNL & BNL DE-AC02-05CH11231 & DE-SC0012704; DOE Office of Science DE-AC02-06CH11357; NSF DMR-1410846.

Analysis of electroluminescence images in small-area circular CdTe solar cells

NASA Astrophysics Data System (ADS)

Bokalič, Matevž; Raguse, John; Sites, James R.; Topič, Marko

2013-09-01

The electroluminescence (EL) imaging process of small area solar cells is investigated in detail to expose optical and electrical effects that influence image acquisition and corrupt the acquired image. An approach to correct the measured EL images and to extract the exact EL radiation as emitted from the photovoltaic device is presented. EL images of circular cadmium telluride (CdTe) solar cells are obtained under different conditions. The power-law relationship between forward injection current and EL emission and a negative temperature coefficient of EL radiation are observed. The distributed Simulation Program with Integrated Circuit Emphasis (SPICE®) model of the circular CdTe solar cell is used to simulate the dark J-V curve and current distribution under the conditions used during EL measurements. Simulation results are presented as circularly averaged EL intensity profiles, which clearly show that the ratio between resistive parameters determines the current distribution in thin-film solar cells. The exact resistance values for front and back contact layers and for CdTe bulk layer are determined at different temperatures, and a negative temperature coefficient for the CdTe bulk resistance is observed.

Magnetron sputtering based direct fabrication of three dimensional CdTe hierarchical nanotrees exhibiting stable superhydrophobic property

NASA Astrophysics Data System (ADS)

Luo, Bingwei; Deng, Yuan; Wang, Yao; Shi, Yongming; Cao, Lili; Zhu, Wei

2013-09-01

Three dimensional CdTe hierarchical nanotrees are initially prepared by a simple one-step magnetron sputtering method without any templates or additives. The CdTe hierarchical nanotrees are constructed by the spear-like vertical trunks and horizontal branches with the diameters of about 100 nm at bottom and became cuspidal on the top. The particular nanostructure imparts these materials superhydrophobic property, and this property can be preserved after placing in air for 90 days, and is stable even after the ultraviolet light and X-ray irradiation, respectively. This study provides a simple strategy to achieve superhydrophobic properties for CdTe materials at lower temperature, which opens a new potential for CdTe solar cell with self-cleaning property.

Effect of substrate and post-deposition annealing on nanostructure and optical properties of CdTe thin films

NASA Astrophysics Data System (ADS)

Hasani, Ebrahim; Raoufi, Davood

2018-04-01

Thermal evaporation is one of the promising methods for depositing CdTe thin films, which can obtain the thin films with the small thickness. In this work, CdTe nanoparticles have deposited on SiO2 substrates such as quartz (crystal) and glass (amorphous) at a temperature (Ts) of 150 °C under a vacuum pressure of 2 × 10‑5 mbar. The thickness of CdTe thin films prepared under vacuum pressure is 100 nm. X-ray diffraction analysis (XRD) results showed the formation of CdTe cubic phase with a strong preferential orientation of (111) crystalline plane on both substrates. The grain size (D) in this orientation obtained about 7.41 and 5.48 nm for quartz and glass respectively. Ultraviolet-visible spectroscopy (UV–vis) measurements indicated the optical band gap about 1.5 and 1.52 eV for CdTe thin films deposited on quartz and glass respectively. Furthermore, to show the effect of annealing temperature on structure and optical properties of CdTe thin films on quartz and glass substrates, the thin films have been annealed at temperatures 50 and 70 °C for one hour. The results of this work indicate that the structure’s parameters and optical properties of CdTe thin films change due to increase in annealing temperature.

Study of half-metallicity in BiMnxFe1-xO3

NASA Astrophysics Data System (ADS)

Ameer, Shaan; Jindal, Kajal; Tomar, Monika; Jha, Pradip K.; Gupta, Vinay

2018-05-01

Spin polarized calculations are performed to study the structural and electronic properties of Mn doped BiFeO3 (BMFO) using simplified local spin density approximation (LSDA) functional under density functional theory (DFT). The B-site doping concentration of Mn in BMFO considered to be 16.7 % (BiMn0.167Fe0.833O3). Density of states calculations are carried out for both ferromagnetic (FM) and anti-ferromagnetic (AFM) order in BMFO. The results predict that BMFO is a half metal for both FM and AFM BMFO with magnetization of 29.0000 µB/cell and 1.0000 µB/cell respectively. The ground state of BMFO is found to be antiferromagnetic and demonstrates BMFO to be a potential candidate for spintronic applications.

Spectrum-per-Pixel Cathodoluminescence Imaging of CdTe Thin-Film Bevels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moseley, John; Al-Jassim, Mowafak M.; Burst, James

2016-11-21

We conduct T=6 K cathodoluminescence (CL) spectrum imaging with a nano-scale electron beam on beveled surfaces of CdTe thin-films at different critical stages of standard CdTe device fabrication. The through-thickness total CL intensity profiles are consistent with a reduction in grain boundary recombination due to the CdCl2 treatment. Color-coded maps of the low-temperature luminescence transition energies reveal that CdTe thin films have remarkably non-uniform opto-electronic properties, which depend strongly on sample processing history. The grain-to-grain S content in the interdiffused CdTe/CdS region is estimated from a sample size of thirty-five grains, and the S content in adjacent grains varies significantlymore » in CdCl2-treated samples. A low-temperature luminescence model is developed to interpret spectral behavior at grain boundaries and grain interiors.« less

Attempting to realize n-type BiCuSeO

NASA Astrophysics Data System (ADS)

Zhang, Xiaoxuan; Feng, Dan; He, Jiaqing; Zhao, Li-Dong

2018-02-01

As an intrinsic p-type semiconductor, BiCuSeO has been widely researched in the thermoelectric community, however, n-type BiCuSeO has not been reported so far. In this work, we successfully realized n-type BiCuSeO through carrying out several successive efforts. Seebeck coefficient of BiCuSeO was increased through introducing extra Bi/Cu to fill the Bi/Cu vacancies that may produce holes, and the maximum Seebeck coefficient was increase from +447 μVK-1 for undoped BiCuSeO to +638 μVK-1 for Bi1.04Cu1.05SeO. The Seebeck coefficient of Bi1.04Cu1.05SeO was changed from p-type to n-type through electron doping through introducing Br/I in Se sites, the maximum negative Seebeck coefficient can reach ∼ -465 μVK-1 and -543 μVK-1 for Bi1.04Cu1.05Se1-xIxO and Bi1.04Cu1.05Se1-xBrxO, respectively. Then, after compositing Bi1.04Cu1.05Se0.99Br0.01O with Ag, n-type BiCuSeO can be absolutely obtained in the whole temperature range of 300-873 K, the maximum ZT 0.05 was achieved at 475 K in the Bi1.04Cu1.05Se0.99Br0.01O+15% Ag. Our report indicates that it is possible to realize n-type conducting behaviors in BiCuSeO system.

Optical characterization of Tm(3+) doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2.

PubMed

Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

2016-08-10

In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd-Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm(3+) ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH(-) absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10(-21) cm(2)) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm(3+): (4)F3 → (3)H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation ((3)H6 + (3)H4 → (3)F4 + (3)F4) rate. Our results suggest that the Tm(3+) doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system.

Optical characterization of Tm3+ doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2

PubMed Central

Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

2016-01-01

In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd–Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm3+ ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH− absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10−21 cm2) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm3+: 4F3 → 3H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation (3H6 + 3H4 → 3F4 + 3F4) rate. Our results suggest that the Tm3+ doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system. PMID:27506152

Combined effects of Bi deficiency and Mn substitution on the structural transformation and functionality of BiFeO{sub 3} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jingyi; Wang, Yao, E-mail: wang-yao@buaa.edu.cn; Deng, Yuan, E-mail: dengyuan@buaa.edu.cn

2014-11-07

Mn-doped BiFeO{sub 3} films with Mn contents of 5 and 10 mol. % were prepared via a chemical route. A carefully controlled amount of Bi deficiency was introduced to further tune the lattice structure and the functionality of multiferroic BiFeO{sub 3}. The crystal structure of Bi{sub 1−δ}Fe{sub 1−x}Mn{sub x}O{sub 3} films was investigated by X-ray diffraction and Raman spectra; a rhombohedral-to-orthorhombic phase transition was revealed. The observed double hysteresis loops and two capacitance maxima from polarization vs electric field and capacitance-voltage measurements indicate an antiferroelectric-like behavior. Additionally, the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases in Bi{sub 1−δ}Fe{sub 1−x}Mn{sub x}O{submore » 3} films was revealed from the domain structures obtained by piezoelectric force microscopy. The effects of Mn substitution in conjunction with Bi deficiency on the FE-AFE phase transition and electrical behavior of BiFeO{sub 3} films are discussed in detail. Meanwhile, magnetic and photoluminescence measurements on the films illustrate that Mn substitution gives rise to the net magnetic moment and the defects induced by both Bi deficiency and Mn substitution influence the electronic structure of BiFeO{sub 3} films. This study thus shows a simple and effective way to control the functionalities of BiFeO{sub 3} films.« less

Thermodynamical properties of La-Ni-T (T = Mg, Bi and Sb) hydrogen storage systems

NASA Astrophysics Data System (ADS)

Giza, K.; Iwasieczko, W.; Pavlyuk, V. V.; Bala, H.; Drulis, H.

The hydrogen absorption properties of LaNi 4.8T 0.2 (T = Mg, Bi and Sb) alloys are reported. The effects of the substitution of Ni in the LaNi 5 compound with Mg, Bi and Sb are investigated. The ability of alloys to absorb hydrogen is characterized by the pressure-composition (p- c) isotherms. The p- c isotherms allow the determining thermodynamic parameters enthalpy (Δ H des) and entropy (Δ S des) of the dehydrogenation processes. The calculated Δ H des and Δ S des data helps to explain the decrease of hydrogen equilibrium pressure in alloys doped with Al, Mg and Bi and its increase in the Sb-doped LaNi 5 compound. Generally, partial substitution of Ni in LaNi 5 compound with Mg, Bi and Sb cause insignificant changes of hydrogen storage capacity compared to the hydrogen content in the initial LaNi 5H 6 hydride phase. However, it is worth to stress that, in the case of LaNi 4.8Bi 0.2, a small increase of H/f.u. up to 6.8 is observed. The obtained results in these investigations indicate that the LaNi 4.8T 0.2 (T = Al, Mg and Bi) alloys can be very attractive materials dedicated for negative electrodes in Ni/MH batteries.

Crystal Growth and Characterization of CdTe Grown by Vertical Gradient Freeze

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Lehoczky, S. L.; Raghothamachar, B.; Dudley, M.

2007-01-01

In this study, crystals of CdTe were grown from melts by the unseeded vertical gradient freeze method. The quality of grown crystal were studied by various characterization techniques including Synchrotron White Beam X-ray Topography (SWBXT), chemical analysis by glow discharge mass spectroscopy (GDMS), low temperature photoluminescence (PL), and Hall measurements. The SWBXT images from various angles show nearly strain-free grains, grains with inhomogeneous strains, as well as twinning nucleated in the shoulder region of the boule. The GDMS chemical analysis shows the contamination of Ga at a level of 3900 ppb, atomic. The low temperature PL measurement exhibits the characteristic emissions of a Ga-doped sample. The Hall measurements show a resistivity of 1 x l0(exp 7) ohm-cm at room temperature to 3 x 10(exp 9) ohm-cm at 78K with the respective hole and electron concentration of 1.7 x 10(exp 9) cm(exp -3) and 3.9 x 10(exp 7) cm(exp -3) at room temperature.

Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface

DOE PAGES

Sun, Ce; Paulauskas, Tadas; Sen, Fatih G.; ...

2016-06-03

Extended defects are of considerable importance in determining the electronic properties of semiconductors, especially in photovoltaics (PVs), due to their effects on electron-hole recombination. We employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries using wafer bonding. Atomic-resolution scanning transmission electron microscopy (STEM) of a [1–10]/ (110) 4.8° tilt grain boundary reveals that the interface is composed of three distinct types of Lomer dislocations. Geometrical phase analysis is used to map strain fields, while STEM and density functional theory (DFT) modeling determine the atomic structure at the interface. The electronic structure of the dislocationmore » cores calculated using DFT shows significant mid-gap states and different charge-channeling tendencies. Cl-doping is shown to reduce the midgap states, while maintaining the charge separation effects. In conclusion, this report offers novel avenues for exploring grain boundary effects in CdTe-based solar cells by fabricating controlled bicrystal interfaces and systematic atomic-scale analysis.« less

Melt-growth dynamics in CdTe crystals

DOE PAGES

Zhou, X. W.; Ward, D. K.; Wong, B. M.; ...

2012-06-01

We use a new, quantum-mechanics-based bond-order potential (BOP) to reveal melt growth dynamics and fine scale defect formation mechanisms in CdTe crystals. Previous molecular dynamics simulations of semiconductors have shown qualitatively incorrect behavior due to the lack of an interatomic potential capable of predicting both crystalline growth and property trends of many transitional structures encountered during the melt → crystal transformation. Here, we demonstrate successful molecular dynamics simulations of melt growth in CdTe using a BOP that significantly improves over other potentials on property trends of different phases. Our simulations result in a detailed understanding of defect formation during themore » melt growth process. Equally important, we show that the new BOP enables defect formation mechanisms to be studied at a scale level comparable to empirical molecular dynamics simulation methods with a fidelity level approaching quantum-mechanical methods.« less

Coexistence of optically active radial and axial CdTe insertions in single ZnTe nanowire.

PubMed

Wojnar, P; Płachta, J; Zaleszczyk, W; Kret, S; Sanchez, Ana M; Rudniewski, R; Raczkowska, K; Szymura, M; Karczewski, G; Baczewski, L T; Pietruczik, A; Wojtowicz, T; Kossut, J

2016-03-14

We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis.

Experimental and theoretical study of the electronic structure of single-crystal BaBiO3

NASA Astrophysics Data System (ADS)

Balandeh, Shadi; Green, Robert J.; Foyevtsova, Kateryna; Chi, Shun; Foyevtsov, Oleksandr; Li, Fengmiao; Sawatzky, George A.

2017-10-01

High quality single crystals of BaBiO3 were grown by congruent melting technique and characterized with x-ray diffraction, x-ray photoemission, and transport property studies. The perovskite oxide BaBiO3 is a negative charge transfer gap high Tc oxide parent superconducting compound exhibiting self-doping of holes into the oxygen 2 p band. We study the low energy scale valence and conduction bands in detail from both a theoretical perspective as well as through x ray, absorption/emission, and photoelectron spectroscopies. X-ray spectroscopy verifies the results of density functional theory (DFT) regarding the overall band structure featuring strong O 2 p character of the empty antibonding combination of the hybridized Bi 6 s and O 2 p states. From the analysis of the core level line shapes we conclude that the dominant O 2 p -Bi 6 s hybridization energy scale determines the low energy scale electronic structure. This analysis provides further insight into the importance of self-doped oxygen 2 p states in this high Tc family of oxides.

Potential 2D thermoelectric material ATeI (A = Sb and Bi) monolayers from a first-principles study

NASA Astrophysics Data System (ADS)

Guo, San-Dong; Zhang, Ai-Xia; Li, Hui-Chao

2017-11-01

Lots of two-dimensional (2D) materials have been predicted theoretically and further confirmed in experiments, and have wide applications in nanoscale electronic, optoelectronic and thermoelectric devices. In this work, the thermoelectric properties of ATeI (A = Sb and Bi) monolayers are systematically investigated according to semiclassical Boltzmann transport theory. It is found that spin-orbit coupling (SOC) has an important effect on the electronic transport coefficients of p-type doping, but a negative influence on n-type doping. The room-temperature sheet thermal conductance is 14.2 {{W}} {{{K}}}-1 for SbTeI and 12.6 {{W}} {{{K}}}-1 for BiTeI, which is lower than that of most well-known 2D materials, such as the transition-metal dichalcogenide, group IV-VI, group VA and group IV monolayers. The very low sheet thermal conductance of ATeI (A = Sb and Bi) monolayers is mainly due to their small group velocities and short phonon lifetimes. The strongly polarized covalent bonds between A and Te or I atoms induce strong phonon anharmonicity, which gives rise to low lattice thermal conductivity. It is found that the high-frequency optical branches contribute significantly to the total thermal conductivity, which is obviously different from the usual picture, where there is little contribution from the optical branches. According to cumulative lattice thermal conductivity with respect to the phonon mean free path (MFP), it is difficult to further reduce the lattice thermal conductivity using nanostructures. Finally, the possible thermoelectric figure of merit ZT values of the ATeI (A = Sb and Bi) monolayers are calculated. It is found that p-type doping has much better thermoelectric properties than n-type doping. At room temperature, the peak ZT can reach 1.11 for SbTeI and 0.87 for BiTeI, respectively. These results make us believe that ATeI (A = Sb and Bi) monolayers may be potential 2D thermoelectric materials, which could stimulate further experimental work

Potential 2D thermoelectric material ATeI (A = Sb and Bi) monolayers from a first-principles study.

PubMed

Guo, San-Dong; Zhang, Ai-Xia; Li, Hui-Chao

2017-11-03

Lots of two-dimensional (2D) materials have been predicted theoretically and further confirmed in experiments, and have wide applications in nanoscale electronic, optoelectronic and thermoelectric devices. In this work, the thermoelectric properties of ATeI (A = Sb and Bi) monolayers are systematically investigated according to semiclassical Boltzmann transport theory. It is found that spin-orbit coupling (SOC) has an important effect on the electronic transport coefficients of p-type doping, but a negative influence on n-type doping. The room-temperature sheet thermal conductance is 14.2 [Formula: see text] for SbTeI and 12.6 [Formula: see text] for BiTeI, which is lower than that of most well-known 2D materials, such as the transition-metal dichalcogenide, group IV-VI, group VA and group IV monolayers. The very low sheet thermal conductance of ATeI (A = Sb and Bi) monolayers is mainly due to their small group velocities and short phonon lifetimes. The strongly polarized covalent bonds between A and Te or I atoms induce strong phonon anharmonicity, which gives rise to low lattice thermal conductivity. It is found that the high-frequency optical branches contribute significantly to the total thermal conductivity, which is obviously different from the usual picture, where there is little contribution from the optical branches. According to cumulative lattice thermal conductivity with respect to the phonon mean free path (MFP), it is difficult to further reduce the lattice thermal conductivity using nanostructures. Finally, the possible thermoelectric figure of merit ZT values of the ATeI (A = Sb and Bi) monolayers are calculated. It is found that p-type doping has much better thermoelectric properties than n-type doping. At room temperature, the peak ZT can reach 1.11 for SbTeI and 0.87 for BiTeI, respectively. These results make us believe that ATeI (A = Sb and Bi) monolayers may be potential 2D thermoelectric materials, which could stimulate further experimental

Synthesis, energy transfer and luminescence properties of Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Renping, E-mail: jxcrp@163.com; Xu, Haidong; Luo, Wenjie

Graphical abstract: PL spectra of Ca{sub 2}MgWO{sub 6}:Sm{sup 3+} and Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphors with excitation at 407 nm, and the corresponding CIE chromaticity diagram and chromaticity coordinates. - Highlights: • Novel Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphor is synthesized by solid-state reaction method in air. • Emission intensity of Ca{sub 2}MgWO{sub 6}:Sm{sup 3+} phosphor is enhanced ∼2 times after co-doped Bi{sup 3+} ion. • Charge compensation and energy transfer may be explained via luminescence properties. • Luminous mechanism is analyzed by energy level diagrams of WO{sub 6}{sup 6−} group, Sm{sup 3+} and Bi{sup 3+} ions.more » - Abstract: Novel Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphor is synthesized by solid-state reaction method in air. Host Ca{sub 2}MgWO{sub 6} with excitation 300 nm emits blue light. Ca{sub 2}MgWO{sub 6}:Bi{sup 3+} phosphor with excitation 300 and 338 nm emits yellow light. Ca{sub 2}MgWO{sub 6}:Sm{sup 3+} phosphor with excitation 300 nm exhibits tunable emission from blue to red light by increasing Sm{sup 3+} doping concentration from 0 to 8 mol%, however, only emits red light with excitation 407 nm. Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphor with excitation 300 and 338 nm emits red light. The optimal Sm{sup 3+} doping concentration is ∼5 mol% in Ca{sub 2}MgWO{sub 6}:Sm{sup 3+} phosphor. After Bi{sup 3+} ion is co-doped, luminescence properties of Ca{sub 2}MgWO{sub 6}:Sm{sup 3+} phosphor can be improved obviously because of Bi{sub 2}O{sub 3} as fluxing agent role and energy transfer from Bi{sup 3+} to Sm{sup 3+} ions. The possible luminous mechanism of Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphor is analyzed and explained by simplified energy level diagrams of WO{sub 6}{sup 6−} group, Bi{sup 3+} and Sm{sup 3+} ions.« less

Er{sup 3+}/Yb{sup 3+}co-doped bismuth molybdate nanosheets upconversion photocatalyst with enhanced photocatalytic activity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adhikari, Rajesh; Gyawali, Gobinda; Cho, Sung Hun

2014-01-15

In this paper, we report the microwave hydrothermal synthesis of Er{sup 3+}/Yb{sup 3+} co-doped Bi{sub 2}MoO{sub 6} upconversion photocatalyst. Crystal structure, morphology, elemental composition, optical properties and BET surface area were analyzed in detail. Infrared to visible upconversion luminescence at 532 nm and 546 nm of the co-doped samples was investigated under excitation at 980 nm. The results revealed that the co-doping of Er{sup 3+}/Yb{sup 3+} into Bi{sub 2}MoO{sub 6} exhibited enhanced photocatalytic activity for the decomposition of rhodamine B under simulated solar light irradiation. Enhanced photocatalytic activity can be attributed to the energy transfer between Er{sup 3+}/Yb{sup 3+} andmore » Bi{sub 2}MoO{sub 6} via infrared to visible upconversion from Er{sup 3+}/Yb{sup 3+} ion and higher surface area of the Bi{sub 2}MoO{sub 6} nanosheets. Therefore, this synthetic approach may exhibit a better alternative to fabricate upconversion photocatalyst for integral solar light absorption. - Graphical abstract: Schematic illustration of the upconversion photocatalysis. Display Omitted - Highlights: • Er{sup 3+}/Yb{sup 3+} co-doped Bi{sub 2}MoO{sub 6} upconversion photocatalyst is successfully synthesized. • We obtained the nanosheets having high surface area. • Upconversion of IR to visible light was confirmed. • Upconversion phenomena can be utilized for effective photocatalysis.« less

Red Light-Emitting Diode Based on Blue InGaN Chip with CdTe x S(1 - x) Quantum Dots

NASA Astrophysics Data System (ADS)

Wang, Rongfang; Wei, Xingming; Qin, Liqin; Luo, Zhihui; Liang, Chunjie; Tan, Guohang

2017-01-01

Thioglycolic acid-capped CdTe x S(1 - x) quantum dots (QDs) were synthesized through a one-step approach in an aqueous medium. The CdTe x S(1 - x) QDs played the role of a color conversion center. The structural and luminescent properties of the obtained CdTe x S(1 - x) QDs were investigated. The fabricated red light-emitting hybrid device with the CdTe x S(1 - x) QDs as the phosphor and a blue InGaN chip as the excitation source showed a good luminance. The Commission Internationale de L'Eclairage coordinates of the light-emitting diode (LED) at (0.66, 0.29) demonstrated a red LED. Results showed that CdTe x S(1 - x) QDs can be excited by blue or near-UV regions. This feature presents CdTe x S(1 - x) QDs with an advantage over wavelength converters for LEDs.

Theoretical and experimental investigations of the thermoelectric properties of Bi{sub 2}S{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chmielowski, Radoslaw, E-mail: chmielowski@imra-europe.com; Péré, Daniel; Jacob, Stéphane

2015-03-28

Electronic and transport properties of Bi{sub 2}S{sub 3} with various dopants are studied using density functional theory and experimental characterizations. First, principle calculations of thermoelectric properties are used to evaluate the thermoelectric potential of the orthorhombic Bi{sub 2}S{sub 3} structure. The computational screening of extrinsic defects is used to select the most favorable n-type dopants. Among all the dopants considered, hafnium and chlorine are identified as prospective dopants, whereas, e.g., germanium is found to be unfavorable. This is confirmed by experiment. Seebeck coefficient (S) and electrical conductivity (σ) measurements are performed at room temperature on pellets obtained by spark plasmamore » sintering. An increase of power factors (S{sup 2}·σ) from around 50 up to 500 μW K{sup −2} m{sup −1} is observed for differently doped compounds. In several series of samples, we observed an optimum of power factor above 500 μW K{sup −2} m{sup −1} at room temperature for a chlorine equivalence of 0.25 mol. % BiCl{sub 3}. The obtained results are plotted on a semilogarithmic log (σ) versus S graph to demonstrate that a very strong linear trend that limits the power factor around 500 μW K{sup −2} m{sup −1} exists. Further improvement of Bi{sub 2}S{sub 3} as thermoelectric material will require finding new doping modes that will break through the observed trend. The results of stability tests demonstrate that properties of optimally doped Bi{sub 2}S{sub 3} are stable.« less

Energy resolution improvement of CdTe detectors by using the principal component analysis technique

NASA Astrophysics Data System (ADS)

Alharbi, T.

2018-02-01

In this paper, we report on the application of the Principal Component Analysis (PCA) technique for the improvement of the γ-ray energy resolution of CdTe detectors. The PCA technique is used to estimate the amount of charge-trapping effect which is reflected in the shape of each detector pulse, thereby correcting for the charge-trapping effect. The details of the method are described and the results obtained with a CdTe detector are shown. We have achieved an energy resolution of 1.8 % (FWHM) at 662 keV with full detection efficiency from a 1 mm thick CdTe detector which gives an energy resolution of 4.5 % (FWHM) by using the standard pulse processing method.

Dependence of CdTe response of bias history

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sites, J.R.; Sasala, R.A.; Eisgruber, I.L.

1995-11-01

Several time-dependent effect have been observed in CdTe cells and modules in recent years. Some appear to be related to degradation at the back contact, some to changes in temperature at the thin-film junction, and some to the bias history of the cell or module. Back-contact difficulties only occur in some cases, and the other two effects are reversible. Nevertheless, confusion in data interpretation can arise when these effects are not characterized. This confusion can be particularly acute when more than one time-dependent effect occurs during the same measurement cycle. The purpose of this presentation is to help categorize time-dependentmore » effects in CdTe and other thin-film cells to elucidate those related to bias history, and to note differences between cell and module analysis.« less

Photoluminescence and time-resolved carrier dynamics in thiol-capped CdTe nanocrystals under high pressure

NASA Astrophysics Data System (ADS)

Lin, Yan-Cheng; Chou, Wu-Ching; Susha, Andrei S.; Kershaw, Stephen V.; Rogach, Andrey L.

2013-03-01

The application of static high pressure provides a method for precisely controlling and investigating many fundamental and unique properties of semiconductor nanocrystals (NCs). This study systematically investigates the high-pressure photoluminescence (PL) and time-resolved carrier dynamics of thiol-capped CdTe NCs of different sizes, at different concentrations, and in various stress environments. The zincblende-to-rocksalt phase transition in thiol-capped CdTe NCs is observed at a pressure far in excess of the bulk phase transition pressure. Additionally, the process of transformation depends strongly on NC size, and the phase transition pressure increases with NC size. These peculiar phenomena are attributed to the distinctive bonding of thiols to the NC surface. In a nonhydrostatic environment, considerable flattening of the PL energy of CdTe NC powder is observed above 3.0 GPa. Furthermore, asymmetric and double-peak PL emissions are obtained from a concentrated solution of CdTe NCs under hydrostatic pressure, implying the feasibility of pressure-induced interparticle coupling.

Luminescent rare earth vanadate nanoparticles doped with Eu3+ and Bi3 for sensing and imaging applications

NASA Astrophysics Data System (ADS)

Escudero, Alberto; Carrillo-Carrión, Carolina; Zyuzin, Mikhail; Hartmann, Raimo; Ashraf, Sumaira; Parak, Wolfgang J.

2016-03-01

Nanoparticles (NPs) are attracting interest in nanomedicine due to their potential medical applications, ranging from optical biolabels and contrast agents for magnetic resonance imaging to carriers for drug and gene delivery for disease therapy.[1] Rare earth (RE) based nanophosphors exhibit important advantages compared with other available luminescent materials, such as quantum dots and nanostructures functionalized with organic dyes, due to their lower toxicities, photostabilities, high thermal and chemical stabilities, high luminescence quantum yields, and sharp emission bands.[2] Yttrium orthovanadate NPs doped with Eu3+ and Bi3+, functionalized with poly acryl acid (PAA), and excitable by near-ultraviolet light have been synthesized by homogeneous precipitation at 120 °C from solutions of rare earth precursors (yttrium acetylacetonate and europium nitrate), bismuth nitrate, sodium orthovanadate, and PAA, in an ethylene glycol/water mixture. Quasispheres with sizes from 93 to 51 nm were obtained. The as synthesized NPs were already functionalized with PAA. The NPs showed the typical red luminescence of Eu3+, which can be excited with near-UV light through an energy transfer from the vanadate anion. The presence of Bi3+ shifts the maximum of the broad excitation band from 280 nm to 342 nm. This excitation path is much more efficient than the direct excitation of the Eu3+ electronic levels, and results in a much higher luminescence. The NPs can be uptaken by HeLa cells, and are eventually located in the lysosomes after being internalized. Finally, the functionalization with PAA provides -COOH anchors for adding functional ligands of biomedical interest that can be used for sensing applications.

The acceptors behavior in the Single and Double Doped Bi12TiO20

NASA Astrophysics Data System (ADS)

Petkova, P.; Vasilev, P.; Gul, Gulsah Celik; Mustafa, M.; Parushev, I.

2018-03-01

The absorption coefficient of Bi12TiO20:AlI, Bi12TiO20:AlII, Bi12SiO20:P and Bi12SiO20:Al+P single crystals is measured in the spectral region of Urbach's rule (1.52 - 2.92 eV) at room temperature. The parameters of electron-phonon interaction, Urbach's energy and the constants of Urbach's rule are calculated. The behavior of the acceptors Al3+ and P5+ in Urbach's rule region has been considered.

The overdoped region of the high Tc superconducting Bi2212 revisited

NASA Astrophysics Data System (ADS)

Zaki, N.; Yang, H.-B.; Rameau, J. D.; Johnson, P. D.; Claus, H.; Hinks, D. G.

High-resolution angle-resolved photoemission (ARPES) is used to probe the temperature dependence of the gaps observed in the antinodal region of the Fermi surface (FS) in overdoped Bi2212. In particular we study samples with doping levels greater than 0.19, the latter having previously been determined to be the doping level associated with a Fermi surface reconstruction. Careful simulation of the measured ARPES spectra indicates that any gap observed in this region of the FS at these doping levels is a reflection of the range of superconducting gaps associated with inhomogeneities observed in STM studies of the same systems. With this observation we are able to reexamine the phase diagram associated with the Bi2212 system and discuss the origin of the pseudogap associated with the underdoped region. This work is supported in part by the Center for Emergent Superconductivity (CES), an EFRC funded by the U.S. DOE. The work is also supported in part by the U.S. DOE under Contract No. DE-AC02- 98CH10886 at BNL and Contract No. DE-AC02-06CH11357 at ANL.

Luminescent properties of Ln3+ doped tellurite glasses containing AlF3

NASA Astrophysics Data System (ADS)

Walas, Michalina; Pastwa, Agata; Lewandowski, Tomasz; Synak, Anna; Gryczyński, Ignacy; Sadowski, Wojciech; Kościelska, Barbara

2016-09-01

The low-phonon energy tellurite glasses TeO2-BaO-Bi2O3 and TeO2-BaO-Bi2O3-AlF3 triply doped with Eu3+, Tb3+, Tm3+ ions in two different molar ratios were synthesized using melt-quenching technique. Their structure and luminescence properties were widely investigated by X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC), Fourier Transform Infrared Spectroscopy (FTIR) and Photoluminescence Spectroscopy (PL). The luminescence spectra of Eu3+, Tb3+, Tm3+ co-doped glasses show apart of the bands corresponding to the 4f-4f transitions of lanthanide ions also band corresponding to glass matrix. AlF3 doping increases emission intensity, although to improve overall emission color further studies on molar composition of samples and the molar ratio of the components should be carried out.

Hydrothermal synthesis of thiol-capped CdTe nanoparticles and their optical properties.

PubMed

Bu, Hang-Beom; Kikunaga, Hayato; Shimura, Kunio; Takahasi, Kohji; Taniguchi, Taichi; Kim, DaeGwi

2013-02-28

Water soluble nanoparticles (NPs) with a high emission property were synthesized via hydrothermal routes. In this report, we chose thiol ligand N-acetyl-L-cysteine as the ideal stabilizer and have successfully employed it to synthesize readily size-controllable CdTe NPs in a reaction of only one step. Hydrothermal synthesis of CdTe NPs has been carried out in neutral or basic conditions so far. We found out that the pH value of precursor solutions plays an important role in the uniformity of the particle size. Actually, high quality CdTe NPs were synthesized under mild acidic conditions of pH 5. The resultant NPs indicated good visible light-emitting properties and stability. Further, the experimental results showed that the reaction temperature influenced significantly the growth rate and the maximum size of the NPs. The CdTe NPs with a high photoluminescence quantum yield (the highest value: 57%) and narrower half width at half maximum (the narrowest value: 33 nm) were attained in very short time, within 40 minutes, reaching diameters of 2.3 to 4.3 nm. The PL intensity was increased with an increase in the reaction time, reflecting the suppression of nonradiative recombination processes. Furthermore, the formation of CdTe/CdS core-shell structures was discussed from the viewpoint of PL dynamics and X-ray diffraction studies.

Enhancement of Thermoelectric Properties in Cold Pressed Nickel Doped Bismuth Sulfide Compounds

NASA Astrophysics Data System (ADS)

Fitriani, Fitriani; Said, Suhana Mohd; Rozali, Shaifulazuar; Salleh, Mohd Faiz Mohd; Sabri, Mohd Faizul Mohd; Bui, Duc Long; Nakayama, Tadachika; Raihan, Ovik; Megat Hasnan, Megat Muhammad Ikhsan; Bashir, Mohamed Bashir Ali; Kamal, Farhan

2018-05-01

Nanostructured Ni doped Bi2S3 (Bi2-xNixS3, 0 ≤ x ≤ 0.07) is explored as a candidate for telluride free thermoelectric material, through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with a sintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introduction of the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2) introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of Bi2S3 was decreased by adding Ni atoms, which shows a minimum value of 2.35 × 10-3 Ω m at 300 °C for Bi1.99Ni0.01S3 sample. The presence of porous structures gives a significant effect on reduction of thermal conductivity, by a reduction of 59.6% compared to a high density Bi2S3. The thermal conductivity of Bi2-xNixS3 ranges from 0.31 to 0.52 W/m K in the temperature range of 27 °C (RT) to 300 °C with the lowest κ values of Bi2S3 compared to the previous works. A maximum ZT value of 0.13 at 300 °C was achieved for Bi1.99Ni0.01S3 sample, which is about 2.6 times higher than (0.05) of Bi2S3 sample. This work show an optimization pathway to improve thermoelectric performance of Bi2S3 through Ni doping and introduction of porosity.

Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

NASA Astrophysics Data System (ADS)

Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

2016-09-01

Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

Synthesis and Study of Fe-Doped Bi₂S₃ Semimagnetic Nanocrystals Embedded in a Glass Matrix.

PubMed

Silva, Ricardo S; Mikhail, Hanna D; Guimarães, Eder V; Gonçalves, Elis R; Cano, Nilo F; Dantas, Noelio O

2017-07-11

Iron-doped bismuth sulphide (Bi 2- x Fe x S₃) nanocrystals have been successfully synthesized in a glass matrix using the fusion method. Transmission electron microscopy images and energy dispersive spectroscopy data clearly show that nanocrystals are formed with an average diameter of 7-9 nm, depending on the thermic treatment time, and contain Fe in their chemical composition. Magnetic force microscopy measurements show magnetic phase contrast patterns, providing further evidence of Fe incorporation in the nanocrystal structure. The electron paramagnetic resonance spectra displayed Fe 3+ typical characteristics, with spin of 5/2 in the 3d⁵ electronic state, thereby confirming the expected trivalent state of Fe ions in the Bi₂S₃ host structure. Results from the spin polarized density functional theory simulations, for the bulk Fe-doped Bi₂S₃ counterpart, corroborate the experimental fact that the volume of the unit cell decreases with Fe substitutionally doping at Bi1 and Bi2 sites. The Bader charge analysis indicated a pseudo valency charge of 1.322| e | on Fe Bi ₁ and 1.306| e | on Fe Bi ₂ ions, and a spin contribution for the magnetic moment of 5.0 µ B per unit cell containing one Fe atom. Electronic band structures showed that the (indirect) band gap changes from 1.17 eV for Bi₂S₃ bulk to 0.71 eV (0.74 eV) for Bi₂S₃:Fe Bi1 (Bi₂S₃:Fe Bi2 ). These results are compatible with the 3d⁵ high-spin state of Fe 3+ , and are in agreement with the experimental results, within the density functional theory accuracy.

Dielectric properties of layered perovskite Sr1-xAxBi2Nb2O9 ferroelectrics (A=La, Ca and x=0,0.1)

NASA Astrophysics Data System (ADS)

Forbess, M. J.; Seraji, S.; Wu, Y.; Nguyen, C. P.; Cao, G. Z.

2000-05-01

In this letter, we report an experimental study on the influences of 10 at. % Ca2+ and La3+ doping on dielectric properties and dc conductivity of SrBi2Nb2O9 ferroelectric ceramics. All the samples were made by two-step solid-state reaction sintering at temperatures up to 1150 °C for 0.5-1 h in air. X-ray diffraction analysis indicated that single-phase layered perovskite ferroelectrics were obtained and no appreciable secondary phase was found. The Curie point was found to increase from 418 °C without doping to 475 °C with Ca2+ doping and to 480 °C with La3+ doping. Dielectric constants, loss tangent, and dc conductivity of SrBi2Nb2O9 ferroelectrics doped with Ca2+ and La3+ were studied and the relationships among doping, crystal structure, and dielectric properties were discussed.

Structural and electronic properties of rectangular CdTe nanowire: A DST study

NASA Astrophysics Data System (ADS)

Khan, Md. Shahzad; Bhatia, Manjeet; Srivastava, Anurag

2018-05-01

CdTe rectangular nanowire of different diameter in zinc-blende phase is investigated using density functional theory. Enhancement of diameter increased stability and improved electronic qualities suitable for device purpose applications. Cohesive energy per atom enhanced on enlarging diameter advocating the stability. Large diameter nanowire (22.62Å) exhibits bandgap of 1.21eV and electronic effective mass is observed to be 0.51me. The bonding between Cd-Te atoms are predominantly observed as covalent assuring its inertness towards moisture.

Optical spectroscopy of cobalt-doped cadmium telluride

NASA Astrophysics Data System (ADS)

Turner, Eric J.; Evans, Jonathan; Harris, Thomas

2018-02-01

Spectroscopic investigation of Co2+:CdTe was performed to evaluate it's potential as a lasing medium. The sample had a targeted doping concentration of 2% and measurements were performed from 10 - 120K. Cross-sections for Co:CdTe were calculated using Füchtbauer-Ladenburg and reciprocity methods. Calculations suggest the potential for efficient lasing at 3.7μm when pumped by a 3μm laser source on the 4A2 <-> 4T2 transition. The fluorescence lifetime was measured to quantify the temperature dependence of the non-radiative relaxation rate. This work aims to characterize Co:CdTe as a novel gain medium for compact, tunable mid-infrared lasers operating within the atmospheric transmission window.

Carrier providers or killers: The case of Cu defects in CdTe

DOE PAGES

Yang, Ji -Hui; Metzger, Wyatt K.; Wei, Su -Huai

2017-07-24

Defects play important roles in semiconductors for optoelectronic applications. Common intuition is that defects with shallow levels act as carrier providers and defects with deep levels are carrier killers. Here, taking the Cu defects in CdTe as an example, we show that relatively shallow defects can play both roles. Using first-principles calculation methods combined with thermodynamic simulations, we study the dialectic effects of Cu-related defects on hole density and lifetime in bulk CdTe. Because CuCd can form a relatively shallow acceptor, we find that increased Cu incorporation into CdTe indeed can help achieve high hole density; however, too much Cumore » can cause significant non-radiative recombination. We discuss strategies to balance the contradictory effects of Cu defects based on the calculated impact of Cd chemical potential, copper defect concentrations, and annealing temperature on lifetime and hole density. Lastly, these findings advance the understanding of the potential complex defect behaviors of relatively shallow defect states in semiconductors.« less

Carrier providers or killers: The case of Cu defects in CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ji -Hui; Metzger, Wyatt K.; Wei, Su -Huai

Defects play important roles in semiconductors for optoelectronic applications. Common intuition is that defects with shallow levels act as carrier providers and defects with deep levels are carrier killers. Here, taking the Cu defects in CdTe as an example, we show that relatively shallow defects can play both roles. Using first-principles calculation methods combined with thermodynamic simulations, we study the dialectic effects of Cu-related defects on hole density and lifetime in bulk CdTe. Because CuCd can form a relatively shallow acceptor, we find that increased Cu incorporation into CdTe indeed can help achieve high hole density; however, too much Cumore » can cause significant non-radiative recombination. We discuss strategies to balance the contradictory effects of Cu defects based on the calculated impact of Cd chemical potential, copper defect concentrations, and annealing temperature on lifetime and hole density. Lastly, these findings advance the understanding of the potential complex defect behaviors of relatively shallow defect states in semiconductors.« less

Fluctuation-induced conductivity analyses of Be-doped (Bi0.25Cu0.25Li0.25Tl0.25)Ba2Ca2Cu3O10-δ superconductors in the critical regime and beyond

NASA Astrophysics Data System (ADS)

Khan, Nawazish A.; Qurat-ul-Ain; Firdous, Umber; Shaheryar

2012-02-01

We have successfully synthesized (Bi0.25Cu0.25Li0.25Tl0.25)Ba2Ca2Cu3O10-δ and (Bi0.25Cu0.25Li0.25Tl0.25)Ba2(Ca1.5Be0.5)Cu3O10-δ samples and studied their excess conductivity analyses (fluctuation-induced conductivity) of resistivity data. The main objective of such analyses is to investigate the influence of Be-substitution on the superconductivity parameters at the microscopic level. The width of the 3D-2D Lawrence-Doniach regime is increased with the doping of Be at the Ca sites. The energy required to break apart the Cooper pairs is increased from 0.03 eV to 0.08 eV in Be-doped samples. Using the Ginzburg-Landau number (NG) and GL equations, the thermodynamic critical magnetic field Bc(0), the lower critical field Bc1(0), the upper critical field Bc2(0), the critical current density Jc(0), and penetration depth λp.d are also calculated from these analyses. The values of critical fields [Bc(0) Bc1(0)], Jc(0), and phase relaxation time τϕ are increased whereas the penetration depth λp.d and κ values are suppressed with Be-doping. It is most likely that as a result of the enhancement in the density of the carriers in the (Bi0.25Cu0.25Li0.25Tl0.25)Ba2(Ca1.5Be0.5)Cu3O10-δ sample, this charge density gap is suppressed, which in turn suppresses the pseudo-gap resulting into enhancement of Bc (0), Bc1(0), and Jc(0).

Nonadiabatic small-polaron hopping conduction in Li-doped and undoped Bi4Sr3Ca3CuyOx (0<=y<=5)

NASA Astrophysics Data System (ADS)

Mollah, S.; Som, K. K.; Bose, K.; Chakravorty, A. K.; Chaudhuri, B. K.

1992-11-01

Detailed experimental results of temperature- and CuO-concentration-dependent dc conductivities of semiconducting Bi4Sr3Ca3CuyOx (y=0 to 5) and Li-doped Bi4Sr3Ca3-zLizCu4Ox (z=0.1, 0.5, and 1.0) glasses are reported. The variation of activation energy with glass compositions dominates the conductivity. Unlike many glasses with transition-metal ions, a strong preexponential factor containing the ``small-polaron'' tunneling term [exp(-2αR)] is observed. Nonadiabatic small-polaron hopping mechanism is found to be appropriate for explaining the conductivity data of both glass systems. Addition of alkali-metal ions decreases the conductivities and causes appreciable change of some model parameters obtained from least-squares fittings of the experimental data. The overall thermal behavior of the electrical conductivities of the glasses, however, remains unaltered. This indicates that small (less than 10 wt.%) amount of Li or other alkali-metal ions in these glasses acts as a flux to keep the oxygen content fixed in the corresponding glass-ceramic (superconducting) phases. This in turn helps increase the superconducting transition temperature of the glass ceramics and also lower the sintering and melting temperatures of the glasses.

Local Electronic Structure Changes in Polycrystalline CdTe with CdCl 2 Treatment and Air Exposure

DOE PAGES

Berg, Morgann; Kephart, Jason M.; Munshi, Amit; ...

2018-03-12

Postdeposition CdCl 2 treatment of polycrystalline CdTe is known to increase the photovoltaic device efficiency. However, the precise chemical, structural, and electronic changes that underpin this improvement are still debated. In this work, spectroscopic photoemission electron microscopy was used to spatially map the vacuum level and ionization energy of CdTe films, enabling the identification of electronic structure variations between grains and grain boundaries (GBs). In vacuo preparation and inert transfer of oxide-free CdTe surfaces isolated the separate effects of CdCl 2 treatment and ambient oxygen exposure. Qualitatively, grain boundaries displayed lower work function and downward band bending relative to grainmore » interiors, but only after air exposure of CdCl 2-treated CdTe. Analysis of numerous space charge regions at grain boundaries showed an average depletion width of 290 nm and an average band bending magnitude of 70 meV, corresponding to a GB trap density of 10 11 cm –2 and a net carrier density of 10 15 cm –3. Finally, these results suggest that both CdCl 2 treatment and oxygen exposure may be independently tuned to enhance the CdTe photovoltaic performance by engineering the interface and bulk electronic structure.« less

Local Electronic Structure Changes in Polycrystalline CdTe with CdCl 2 Treatment and Air Exposure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berg, Morgann; Kephart, Jason M.; Munshi, Amit

Postdeposition CdCl 2 treatment of polycrystalline CdTe is known to increase the photovoltaic device efficiency. However, the precise chemical, structural, and electronic changes that underpin this improvement are still debated. In this work, spectroscopic photoemission electron microscopy was used to spatially map the vacuum level and ionization energy of CdTe films, enabling the identification of electronic structure variations between grains and grain boundaries (GBs). In vacuo preparation and inert transfer of oxide-free CdTe surfaces isolated the separate effects of CdCl 2 treatment and ambient oxygen exposure. Qualitatively, grain boundaries displayed lower work function and downward band bending relative to grainmore » interiors, but only after air exposure of CdCl 2-treated CdTe. Analysis of numerous space charge regions at grain boundaries showed an average depletion width of 290 nm and an average band bending magnitude of 70 meV, corresponding to a GB trap density of 10 11 cm –2 and a net carrier density of 10 15 cm –3. Finally, these results suggest that both CdCl 2 treatment and oxygen exposure may be independently tuned to enhance the CdTe photovoltaic performance by engineering the interface and bulk electronic structure.« less

Synthesis and transport characterization of electrochemically deposited CdTe nanowires

NASA Astrophysics Data System (ADS)

Kaur, Jaskiran; Kaur, Harmanmeet; Singh, R. C.

2018-04-01

This paper reports the synthesis and characterization of CdTe nanowires. A thin polymeric films were irradiated with 80MeV Ag ions at a fluence of 8E7 ions/cm2, followed by UV irradiation and chemically etching in aqueous NaOH. Nanosizes go-through pores so formed were filled using a specially designed cell via electrodeposition. Nanowires so formed were further studied using SEM, I-V, UV and XRD analysis. SEM images show very smooth and uniform CdTe nanowires freely standing on the substrate. The in-situ I-V characteristics of nano-/micro structures was carried out at room temperature by leaving the structures embedded in the insulating template membrane itself.

STM studies of topological phase transition in (Bi,In)2Se3

NASA Astrophysics Data System (ADS)

Zhang, Wenhan; Wang, Xueyun; Cheong, Sang-Wook; Wu, Weida; Weida Wu Team; Sang-Wook Cheong Collaboration

Topological insulators (TI) are a class of materials with insulating bulk and metallic surface state, which is the result of band inversion induced by strong spin-orbit coupling (SOC). The transition from topological phase to non-topological phase is of great significance. In theory, topological phase transition is realized by tuning SOC strength. It is characterized by the process of gap closing and reopening. Experimentally it was observed in two systems: TlBi(S1-xSex)2 and (Bi1-xInx)2 Se3 where the transition is realized by varying isovalent elements doping concentration. However, none of the previous studies addressed the impact of disorder, which is inevitable in doped systems. Here, we present a systematic scanning tunneling microscopy/spectroscopy study on (Bi1-xInx)2 Se3 single crystals with different In concentrations across the transition. Our results reveal an electronic inhomogeneity due to the random distribution of In defects which locally suppress the topological surface states. Our study provides a new angle of understanding the topological transition in the presence of strong disorders. This work is supported by NSF DMR-1506618.

Enhanced ferroelectric properties and thermal stability of nonstoichiometric 0.92(Na0.5Bi0.5)TiO3-0.08(K0.5Bi0.5)TiO3 single crystals

NASA Astrophysics Data System (ADS)

Zhang, Haiwu; Chen, Chao; Zhao, Xiangyong; Deng, Hao; Li, Long; Lin, Di; Li, Xiaobing; Ren, Bo; Luo, Haosu; Yan, Jun

2013-11-01

Bi deficient, Mn doped 0.92(Na0.5Bi0.5)TiO3-0.08(K0.5Bi0.5)TiO3 single crystals were grown by carefully controlled top-seeded solution growth method. Local structures were investigated by transmission electron microscopy. The site occupation and valence state of manganese were characterized by electron paramagnetic resonance spectrum. The leakage current density in the as-grown single crystals is effectively depressed. The introduced defect complexes suppress the temperature induced phase transformation, increasing the depolarization temperature (165 °C) and thermal stability of ferroelectric properties.

Versatile organic (fullerene)-inorganic (CdTe nanoparticle) nanoensembles.

PubMed

Guldi, Dirk M; Zilbermann, Israel; Anderson, Greg; Kotov, Nicholas A; Tagmatarchis, Nikos; Prato, Maurizio

2004-11-10

Novel organic (positively charged fullerene)-inorganic (negatively charged CdTe nanoparticle) nanoensembles were devised through electrostatic interactions and probed as versatile donor-acceptor hybrids. Photoirradiation of their homogeneous solutions, containing the electrostatically packed components, let to very long-lived (1.3 ms) charge separated states.

Photo-induced interaction of thioglycolic acid (TGA)-capped CdTe quantum dots with cyanine dyes

NASA Astrophysics Data System (ADS)

Abdelbar, Mostafa F.; Fayed, Tarek A.; Meaz, Talaat M.; Ebeid, El-Zeiny M.

2016-11-01

The photo-induced interaction of three different sizes of thioglycolic acid (TGA)-capped CdTe quantum dots (CdTe QDs) with two monomethine cyanine dyes belonging to the thiazole orange (TO) family has been studied. Positively charged cyanines interact with QDs surface which is negatively charged due to capping agent carboxylate ions. The energy transfer parameters including Stern-Volmer constant, Ksv, number of binding sites, n, quenching sphere radius, r, the critical energy transfer distance, R0, and energy transfer efficiencies, E have been calculated. The effect of structure and the number of aggregating molecules have been studied as a function of CdTe QDs particle size. Combining organic and inorganic semiconductors leads to increase of the effective absorption cross section of the QDs which can be utilized in novel nanoscale designs for light-emitting, photovoltaic and sensor applications. A synthesized triplet emission of the studied dyes was observed using CdTe QDs as donors and this is expected to play a potential role in molecular oxygen sensitization and in photodynamic therapy (PDT) applications.

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

NASA Astrophysics Data System (ADS)

Yang, Y.-B.; Seewald, L.; Mohanty, Dibyajyoti; Wang, Y.; Zhang, L. H.; Kisslinger, K.; Xie, Weiyu; Shi, J.; Bhat, I.; Zhang, Shengbai; Lu, T.-M.; Wang, G.-C.

2017-08-01

Single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (∼21-55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [1 bar2 1 bar]CdTe//[ 1 bar100]CdS//[010]mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. The use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.

Sn-doped Bi 1.1Sb 0.9Te 2S bulk crystal topological insulator with excellent properties

DOE PAGES

S. K. Kushwaha; Pletikosic, I.; Liang, T.; ...

2016-04-27

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1Sb 0.9Te 2S grown by the Vertical Bridgeman method.more » We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.« less

Nitrogen-Doping Enables Covalent-Like pi-pi Bonding between Graphenes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Yong-Hui; Huang, Jingsong; Sumpter, Bobby G

The neighboring layers in bi-layer (and few-layer) graphenes of both AA and AB stacking motifs are known to be separated at a distance corresponding to van der Waals (vdW) interactions. In this Letter, we present for the first time a new aspect of graphene chemistry in terms of a special chemical bonding between the giant graphene molecules . Through rigorous theoretical calculations, we demonstrate that the N-doped graphenes (NGPs) with various doping levels can form an unusual two-dimensional (2D) pi pi bonding in bi-layer NGPs bringing the neighboring NGPs to significantly reduced interlayer separations. The interlayer binding energies can bemore » enhanced by up to 50% compared to the pristine graphene bi-layers that are characterized by only vdW interactions. Such an unusual chemical bonding arises from the pi pi overlap across the vdW gap while the individual layers maintain their in-plane pi-conjugation and are accordingly planar. The existence of the resulting interlayer covalent-like bonding is corroborated by electronic structure calculations and crystal orbital overlap population (COOP) analyses. In NGP-based graphite with the optimal doping level, the NGP layers are uniformly stacked and the 3D bulk exhibits metallic characteristics both in the in-plane and along the stacking directions.« less

Molecular statics simulation of CdTe grain boundary structures and energetics using a bond-order potential

NASA Astrophysics Data System (ADS)

Stechmann, Guillaume; Zaefferer, Stefan; Raabe, Dierk

2018-06-01

The structure and energetics of coincidence site lattice grain boundaries (GB) in CdTe are investigated by mean of molecular statics simulations, using the Cd–Zn–Te bond-order potential (second iteration) developed by Ward et al (2012 Phys. Rev. B 86 245203; 2013 J. Mol. Modelling 19 5469–77). The effects of misorientation (Σ value) and interface plane are treated separately, complying with the critical need for full five-parameter characterization of GB. In addition, stoichiometric shifts, occurring between the inner interfaces and their adjacent atomic layers, are also predicted, revealing the energetic preference of Te-rich boundaries, opening opportunities for crystallography-based intrinsic interface doping. Our results also suggest that the intuitive assumption that Σ3 boundaries with low-indexed planes are more energetically favorable is often unfounded, except for coherent twins developing on {111} boundary planes. Therefore, Σ5, 7 or 9 boundaries, with lower interface energy than that of twin boundaries lying on different facets, are frequently encountered.

Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method

NASA Astrophysics Data System (ADS)

Zhang, Dainan; Liao, Yulong; Jin, Lichuan; Wen, Qi-Ye; Zhong, Zhiyong; Wen, Tianlong; Xiao, John Q.

2017-12-01

Ge-based alloys have drawn great interest as promising materials for their superior visible to infrared photoelectric performances. In this study, we report the preparation and optical properties of germanium-bismuth (Ge1-xBix) thin films by using molecular beam epitaxy (MBE). GeBi thin films belong to the n-type conductivity semiconductors, which have been rarely reported. With the increasing Bi-doping content from 2 to 22.2%, a series of Ge1-xBix thin film samples were obtained and characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. With the increase of Bi content, the mismatch of lattice constants increases, and the GeBi film shifts from direct energy band-gaps to indirect band-gaps. The moderate increase of Bi content reduces optical reflectance and promotes the transmittance of extinction coefficient in infrared wavelengths. The absorption and transmittance of GeBi films in THz band increase with the increase of Bi contents.

Growth and analysis of micro and nano CdTe arrays for solar cell applications

NASA Astrophysics Data System (ADS)

Aguirre, Brandon Adrian

CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An

Abnormal variation of band gap in Zn doped Bi{sub 0.9}La{sub 0.1}FeO{sub 3} nanoparticles: Role of Fe-O-Fe bond angle and Fe-O bond anisotropy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xunling; Liu, Weifang, E-mail: wfliu@tju.edu.cn, E-mail: shouyu.wang@yahoo.com; Wu, Ping

2015-07-27

Bi{sub 0.9}La{sub 0.1}FeO{sub 3} (BLFO) and Bi{sub 0.9}La{sub 0.1}Fe{sub 0.99}Zn{sub 0.01}O{sub 3} (BLFZO) nanoparticles were prepared via a sol-gel method. The oxygen vacancies and holes increase with Zn doping analyzed through X-ray photoelectron spectroscopy, which could contribute to the increase of leakage current density. However, with the increase of the defects (oxygen vacancies and holes), the band gap of BLFZO also is increased. To explain the abnormal phenomenon, the bandwidth of occupied and unoccupied bands was analyzed based on the structural symmetry driven by the Fe-O-Fe bond angle and Fe-O bond anisotropy.

Recycling of CdTe photovoltaic waste