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Sample records for binary gallium-rare-earth chalcogenides

  1. Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

    NASA Technical Reports Server (NTRS)

    Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  2. Growth mechanism of nanowires: binary and ternary chalcogenides

    NASA Astrophysics Data System (ADS)

    Singh, N. B.; Coriell, S. R.; Su, Ching Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-05-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acoustooptical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  3. Compositional trends of γ-induced optical changes observed in chalcogenide glasses of binary As-S system

    SciTech Connect

    Shpotyuk, M.; Shpotyuk, O.; Golovchak, Roman; McCloy, John S.; Riley, Brian J.

    2014-01-23

    Compositional trends of γ-induced optical changes in chalcogenide glasses are studied with the binary As-S system. Effects of γ-irradiation and annealing are compared using the changes measured in the fundamental optical absorption edge region. It is shown that annealing near the glass transition temperature leads to bleaching of As-S glasses, while γ-irradiation leads to darkening; both depend on the glass composition and thermal history of the specimens. These results are explained in terms of competitive destruction–polymerization transformations and physical aging occurring in As-S chalcogenide glasses under the influence of γ-irradiation.

  4. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    SciTech Connect

    Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

    2011-04-15

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  5. Metal-metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices.

    PubMed

    Zhang, Ruihong; Cho, Seonghyuk; Lim, Daw Gen; Hu, Xianyi; Stach, Eric A; Handwerker, Carol A; Agrawal, Rakesh

    2016-04-11

    Bulk metals and metal chalcogenides are found to dissolve in primary amine-dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu2Sn(S(x),Se(1-x))3, and Cu2ZnSn(S(x)Se(1-x))4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Cu2ZnSn(S(x)Se(1-x))4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively. PMID:26981781

  6. Chalcogenide glasses

    SciTech Connect

    Taylor, P.C.

    1987-08-15

    Although there are some significant exceptions, most important glass-forming systems contain elements from the sixth, or chalcogenide, column of the periodic table (oxygen, sulfur, selenium, or tellurium). The glasses that contain oxygen are typically insulators, while those that contain the heavier chalcogen elements are usually semiconductors. Even though oxygen is technically a chalcogen element, the term chalcogenide glass is commonly used to denote those largely covalent, semiconducting glasses contain sulfur, selenium, or tellurium as one of the constituents.

  7. Pressure and photo-induced modification of structural and chemical order in binary and elemental chalcogenide based materials

    NASA Astrophysics Data System (ADS)

    Lindberg, George P.

    This dissertation explores the effects of pressure and light on chalcogenide based materials. In ZnSe, ZnTe, and CdSe the surprising precipitation of the constituent anion under hydrostatic pressure and moderate laser exposure in high quality bulk and MBE film samples is explored in detail. In ZnSe the anomalous broadening in the TO(Gamma) phonon region is explored by careful low laser power pressure cycling experiments. The experimental results are supported with density functional theory calculations of the phonon band structure. Finally, the photo-induced crystallization onset of amorphous selenium films is explored as a function of temperature and substrate structure. The morphology of the photocrystallized spots is also explored using Raman mapping, optical microscopy, and atomic force microscopy.

  8. Atomic layer deposition of quaternary chalcogenides

    DOEpatents

    Thimsen, Elijah J; Riha, Shannon C; Martinson, Alex B.F.; Elam, Jeffrey W; Pellin, Michael J

    2014-06-03

    Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu.sub.2ZnSnS.sub.4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.

  9. Multiscale modeling of chalcogenides

    NASA Astrophysics Data System (ADS)

    Mauro, John C.

    Chalcogenide glasses exhibit unique properties applicable to a wide range of fields, including electrical and optical switching and the transmission of infrared radiation. In this thesis, we adopt a hierarchical multiscale modeling approach to investigate the fundamental physics of chalcogenide systems. Our multiscale modeling begins in Part I at the quantum mechanical level, where we use the highly accurate Moller-Plesset perturbation technique to derive interaction potentials for elemental and heterogeneous chalcogenide systems. The resulting potentials consist of two-, three-, and effective four-body terms. In Part II, we use these ab initio potentials in classical Monte Carlo simulations to investigate the structure of chalcogenide glasses. We discuss our simulation results in relation to the Phillips model of topological constraints, which predicts critical behavior in chalcogenide systems as a function of average coordination number. Finally, in Part III we address the issue of glass transition range behavior. After reviewing previous models of the glass transition, we derive a new model based on nonequilibrium statistical mechanics and an energy landscape formalism. The new model requires as input a description of inherent structure energies and the transition energies between these structures. To address this issue, we derive an eigenvector-following technique for mapping a multidimensional potential energy landscape. This technique is then extended for application to enthalpy landscapes. Our model will enable the first-ever calculation of glass transition behavior based on only ab initio physics.

  10. Chalcogenide glass microsphere laser.

    PubMed

    Elliott, Gregor R; Murugan, G Senthil; Wilkinson, James S; Zervas, Michalis N; Hewak, Daniel W

    2010-12-01

    Laser action has been demonstrated in chalcogenide glass microsphere. A sub millimeter neodymium-doped gallium lanthanum sulphide glass sphere was pumped at 808 nm with a laser diode and single and multimode laser action demonstrated at wavelengths between 1075 and 1086 nm. The gallium lanthanum sulphide family of glass offer higher thermal stability compared to other chalcogenide glasses, and this, along with an optimized Q-factor for the microcavity allowed laser action to be achieved. When varying the pump power, changes in the output spectrum suggest nonlinear and/or thermal effects have a strong effect on laser action. PMID:21165022

  11. Chalcogenide glass nanostructures

    DOEpatents

    Johnson, Bradley R.; Schweiger, Michael J.; MacIsaac, Brett D.; Sundaram, S. Kamakshi

    2007-05-01

    Chalcogenide nanowires and other micro-and nano scale structures are grown on a preselected portion of on a substrate. They are amorphous and of uniform composition and can be grown by a sublimation-condensation process onto the surface of an amorphous substrate. Among other uses, these structures can be used as coatings on optical fibers, as coatings on implants, as wispering galleries, in electrochemical devices, and in nanolasers.

  12. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  13. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, Rommel; Chen, Yih-Wen

    1987-01-01

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  14. Chemical Routes to Colloidal Chalcogenide Nanosheets

    SciTech Connect

    Schaak, Raymond

    2015-02-19

    This project sought to develop new low-temperature synthetic pathways to intermetallic and chalcogenide nanostructures and powders, with an emphasis on systems that are relevant to advancing the synthesis, processing, and discovery of superconducting materials. The primary synthetic routes involved solution chemistry methods, and several fundamental synthetic challenges that underpinned the formation of these materials were identified and investigated. Methods for incorporating early transition metals and post transition metals into nanoscale and bulk crystals using low-temperature solution chemistry methods were developed and studied, leading to colloidal nanocrystals of elemental indium, manganese, and germanium, as well as nanocrystalline and bulk intermetallic compounds containing germanium, gallium, tin, indium, zinc, bismuth, and lithium. New chemical tools were developed to help target desired phases in complex binary intermetallic and metal chalcogenide systems that contain multiple stable phases, including direct synthesis methods and chemical routes that permit post-synthetic modification. Several phases that are metastable in bulk systems were targeted, synthesized, and characterized as nanocrystalline solids and bulk powders, including the L12-type intermetallic compounds Au3Fe, Au3Ni, and Au3Co, as well as wurtzite-type MnSe. Methods for accessing crystalline metal borides and carbides using direct solution chemistry methods were also developed, with an emphasis on Ni3B and Ni3C, which revealed useful correlations of composition and magnetic properties. Methods for scale-up and nanoparticle purification were explored, providing access to centimeter-scale pressed pellets of polyol-synthesized nanopowders and a bacteriophage-mediated method for separating impure nanoparticle mixtures into their components. Several advances were made in the synthesis of iron selenide and related superconducting materials, including the production of colloidal Fe

  15. Space processing of chalcogenide glass

    NASA Technical Reports Server (NTRS)

    Larsen, D. C.; Ali, M. I.

    1977-01-01

    The manner in which the weightless, containerless nature of in-space processing can be successfully utilized to improve the quality of infrared transmitting chalcogenide glasses is determined. The technique of space processing chalcogenide glass was developed, and the process and equipment necessary to do so was defined. Earthbound processing experiments with As2S3 and G28Sb12Se60 glasses were experimented with. Incorporated into these experiments is the use of an acoustic levitation device.

  16. Chalcogenide electrochemical cell

    SciTech Connect

    Basu, S.; Worrell, W.L.

    1981-09-08

    A battery is provided in which the anode contains an alkali metal in a high state of thermodynamic activity; the cathode comprises a partially alkali metal-intercalated chalcogenide of the formula AYMYZX wherein a is an alkali metal more electropositive and larger than the anode alkali metal, M is a transition metal of group IV or V, X is a numerical value of from about 1.8 to about 2.1, Y is a numerical value of from about 0.01 to about 1 and Z is sulfur, selenium or tellurium; and the electrolyte comprises ions of the anode metal in a medium which is compatible with the anode and cathode allowing transport of the ion from anode to intercalate into the cathode. In the discharged state the battery includes a cathode characterized by the presence of A'ZAYMZX in which A' is alkali metal more electronegative than A and Z is a numerical value in the range 0

  17. Chalcogenide electrochemical cell

    SciTech Connect

    Basu, S.; Worrell, W.L.

    1980-06-03

    A battery is provided in which the anode contains an alkali metal in a high state of thermodynamic activity; the cathode comprises a partially alkali metal-intercalated chalcogenide of the formula AYMZX wherein A is an alkali metal more electropositive and larger than the anode alkali metal, M is a transition metal of group IV or V, X is a numerical value of from about 1.8 to about 2.1, Y is a numerical value of from about 0.01 to about 1 and Z is sulfur, selenium or tellurium; and the electrolyte comprises ions of the anode metal in a medium which is compatible with the anode and cathode allowing transport of the ion from anode to intercalate into the cathode. In the discharged state the battery includes a cathode characterized by the presence of Z'ZAYMZX in which A' is alkali metal more electronegative than A and Z is a numerical value in the range 0

  18. Space processing of chalcogenide glasses

    NASA Technical Reports Server (NTRS)

    Larsen, D. C.; Ali, M. A.

    1975-01-01

    Chalcogenide glasses are discussed as good infrared transmitters, possessing the strength, corrosion resistance, and scale-up potential necessary for large 10.6-micron windows. The disadvantage of earth-produced chalcogenide glasses is shown to be an infrared absorption coefficient which is unacceptably high relative to alkali halides. This coefficient is traced to optical nonhomogeneities resulting from environmental and container contamination. Space processing is considered as a means of improving the infrared transmission quality of chalcogenides and of eliminating the following problems: optical inhomogeneities caused by thermal currents and density fluctuation in the l-g earth environment; contamination from the earth-melting crucible by oxygen and other elements deleterious to infrared transmission; and, heterogeneous nucleation at the earth-melting crucible-glass interface.

  19. Focus on superconducting properties of iron chalcogenides

    NASA Astrophysics Data System (ADS)

    Takano, Yoshihiko

    2012-10-01

    Since the discovery of iron-based superconductors, much attention has been given to the exploration of new superconducting compounds. Numerous superconducting iron compounds have been found and categorized into five groups: LnFeAsO (Ln = lanthanide), BaFe2As2, KFeAs, FeSe and FeAs with perovskite blocking layers. Among them, FeSe has the simplest crystal structure. Since the crystal structure is composed of only superconducting Fe layers, the FeSe family must be the best material to investigate the mechanism of iron-based superconductivity. FeSe shows very strong pressure effects. The superconducting transition temperature (Tc) of FeSe is approximately 8 K at ambient pressure. However Tc dramatically increases up to 37 K under applied pressure of 4-6 GPa. This is the third highest Tc value among binary superconductors, surpassed only by CsC60 under pressure (Tc = 38 K) and MgB2 (Tc = 39 K). On the other hand, despite FeTe having a crystal structure analogous to that of FeSe, FeTe shows antiferromagnetic properties without superconductivity. Doping of small ions, either Se or S, however, can induce superconductivity in FeTe1-xSex or FeTe1-xSx . The superconductivity is very weak for small x values, and annealing under certain conditions is required to obtain strong superconductivity, for instance annealing in oxygen or alcoholic beverages such as red wine. The following selection of papers describe many important experimental and theoretical studies on iron chalcogenide superconductors including preparation of single crystals, bulk samples and thin films; NMR measurements; photoemission spectroscopy; high-pressure studies; annealing effects and research on new BiS2-based superconductors. I hope this focus issue will help researchers understand the frontiers of iron chalcogenide superconductors and assist in the discovery of new phenomena related to iron-based superconductivity.

  20. Density functional theory (DFT) study of the gas-phase decomposition of the Cd[((i)Pr)2PSSe] 2 single-source precursor for the CVD of binary and ternary cadmium chalcogenides.

    PubMed

    Opoku, Francis; Asare-Donkor, Noah Kyame; Adimado, Anthony A

    2014-11-01

    The chemistry of group II-VI semiconductors has spurred considerable interest in decomposition reaction mechanisms and has been exploited for various technological applications. In this work, computational chemistry was employed to investigate the possible gas-phase decomposition pathways of the mixed Cd[((i)Pr)2PSSe]2 single-source precursor for the chemical vapour deposition of cadmium chalcogenides as thin films. The geometries of the species involved were optimised by employing density functional theory at the MO6/LACVP* level. The results indicate that the steps that lead to CdS formation on the singlet potential energy surface are favoured kinetically over those that lead to CdSe and ternary CdSe(x)S(1-x) formation. On the doublet PES, the steps that lead to CdSe formation are favoured kinetically over those that lead to CdS and CdSe(x)S(1-x) formation. However, thermodynamically, the steps that lead to ternary CdSe(x)S(1-x) formation are more favourable than those that lead to CdSe and CdS formation on both the singlet and the doublet PESs. Density functional theory calculations revealed that the first steps exhibit huge activation barriers, meaning that the thermodynamically favourable process takes a very long time to initiate. PMID:25338817

  1. Space processing of chalcogenide glass

    NASA Technical Reports Server (NTRS)

    Firestone, R. F.; Schramm, S. W.

    1978-01-01

    A program was conducted to develop the technique of space processing for chalcogenide glass, and to define the process and equipment necessary. In the course of this program, successful long term levitation of objects in a 1-g environment was achieved. Glass beads 4 mm diameter were containerless melted and fused together.

  2. Prospects of Colloidal Copper Chalcogenide Nanocrystals.

    PubMed

    van der Stam, Ward; Berends, Anne C; de Mello Donega, Celso

    2016-03-01

    Over the past few years, colloidal copper chalcogenide nanocrystals (NCs) have emerged as promising alternatives to conventional Cd and Pb chalcogenide NCs. Owing to their wide size, shape, and composition tunability, Cu chalcogenide NCs hold great promise for several applications, such as photovoltaics, lighting and displays, and biomedical imaging. They also offer characteristics that are unparalleled by Cd and Pb chalcogenide NCs, such as plasmonic properties. Moreover, colloidal Cu chalcogenide NCs have low toxicity, potentially lower costs, and excellent colloidal stability. This makes them attractive materials for the large-scale deployment of inexpensive, sustainable, and environmentally benign solution-processed devices. Nevertheless, the synthesis of colloidal Cu chalcogenide NCs, especially that of ternary and quaternary compositions, has yet to reach the same level of mastery as that available for the prototypical Cd chalcogenide based NCs. This review provides a concise overview of this rapidly advancing field, sketching the state of the art and highlighting the key challenges. We discuss recent developments in the synthesis of size-, shape-, and composition-controlled NCs of Cu chalcogenides, with emphasis in strategies to circumvent the limitations arising from the need to precisely balance the reactivities of multiple precursors in synthesizing ternary and quaternary compositions. In this respect, we show that topotactic cation-exchange reactions are a promising alternative route to complex multinary Cu chalcogenide NCs and hetero-NCs, which are not attainable by conventional routes. The properties and potential applications of Cu chalcogenide NCs and hetero-NCs are also addressed. PMID:26684665

  3. Destructive Clustering of Metal Nanoparticles in Chalcogenide and Oxide Glassy Matrices

    NASA Astrophysics Data System (ADS)

    Shpotyuk, M. V.; Shpotyuk, O. I.; Cebulski, J.; Kozyukhin, S.

    2016-01-01

    The energetic χ-criterion is developed to parameterize difference in the origin of high-order optical non-linearity associated with metallic atoms (Cu, Ag, Au) embedded destructively in oxide- and chalcogenide glasses. Within this approach, it is unambiguously proved that covalent-bonded networks of soft semiconductor chalcogenides exemplified by binary As(Ge)-S(Se) glasses differ essentially from those typical for hard dielectric oxides like vitreous silica by impossibility to accommodate pure agglomerates of metallic nanoparticles. In an excellence according to known experimental data, it is suggested that destructive clustering of nanoparticles is possible in Cu-, Ag-, and Au-ion-implanted dielectric oxide glass media, possessing a strongly negative χ-criterion. Some recent speculations trying to ascribe equally this ability to soft chalcogenide glasses despite an obvious difference in the corresponding bond dissociation energies have been disclosed and criticized as inconclusive.

  4. Destructive Clustering of Metal Nanoparticles in Chalcogenide and Oxide Glassy Matrices.

    PubMed

    Shpotyuk, M V; Shpotyuk, O I; Cebulski, J; Kozyukhin, S

    2016-12-01

    The energetic χ-criterion is developed to parameterize difference in the origin of high-order optical non-linearity associated with metallic atoms (Cu, Ag, Au) embedded destructively in oxide- and chalcogenide glasses. Within this approach, it is unambiguously proved that covalent-bonded networks of soft semiconductor chalcogenides exemplified by binary As(Ge)-S(Se) glasses differ essentially from those typical for hard dielectric oxides like vitreous silica by impossibility to accommodate pure agglomerates of metallic nanoparticles. In an excellence according to known experimental data, it is suggested that destructive clustering of nanoparticles is possible in Cu-, Ag-, and Au-ion-implanted dielectric oxide glass media, possessing a strongly negative χ-criterion. Some recent speculations trying to ascribe equally this ability to soft chalcogenide glasses despite an obvious difference in the corresponding bond dissociation energies have been disclosed and criticized as inconclusive. PMID:26787053

  5. Phonon dynamics of neptunium chalcogenides

    NASA Astrophysics Data System (ADS)

    Aynyas, Mahendra; Rukmangad, Aditi; Arya, Balwant S.; Sanyal, Sankar P.

    2012-06-01

    We have performed phonon calculations of Neptunium Chalcogenides (NpX) (X= S, Se, Te) based on breathing shell model (BSM) which includes breathing motion of electron of the Np-atoms due to f-d hybridization. The model predicts that the short range breathing phenomenon play a dominant role in the phonon properties. We also report, for the first time specific heat for these compounds.

  6. Advanced manufacturing methods for chalcogenide molded optics

    NASA Astrophysics Data System (ADS)

    Cogburn, Gabriel

    2011-06-01

    As Chalcogenide glass and Precision Molded Optics (PMO) have developed and matured to a point of being accepted as replacements for Germanium Single Point Diamond Turned (SPDT) optics; technological research is being dedicated to developing infrared PMO that can be used in a broader application base. These include laser arrays, large aperture molded chalcogenide optics, and molded in mount infrared optics. This paper presents applications for infrared laser arrays and the corresponding optics that must be closely mechanically mounted to avoid clipping the beams. Different molding and mounting techniques will be discussed to solve this issue which include; dicing chalcogenide optic lenses, molded in mount chalcogenide optics and stepped optic shape molding for mounting purposes. Accompanying the research and discussion of these techniques will be experiments and molded chalcogenide glass lenses showing the results and application for each lens type.

  7. Chalcogenide-tellurite composite microstructured optical fibre

    NASA Astrophysics Data System (ADS)

    Kohoutek, T.; Duan, Z.; Kawashima, H.; Yan, X.; Suzuki, T.; Matsumoto, M.; Misumi, Takashi; Ohishi, Y.

    2012-02-01

    We report on fabrication a composite microstructured optical fibre composed of highly nonlinear chalcogenide Ge-Ga- Sb-S glass core and tellurite TeO2-ZnO-Li20-Bi2O3 glass clad. We aimed at obtaining more flattened chromatic dispersion for pumping chalcogenide glass based optical fibre by a pulse laser at current telecommunication wavelengths, i.e. λ = 1.35 - 1.7 μm, which is difficult to achieve by using a single material chalcogenide fibers due to their high refractive index (n > 2.1). A fibre design exploiting a composite of two glasses and one ring of the air holes brings similar options for tuning the fibre dispersion such as use of complex multi rings of air-holes approach. A good choice of glasses, allows for fabricating a composite chalcogenide-tellurite optical fibre benefiting from high nonlinearity of chalcogenide core glass but exploiting a tellurite glass technology and fibre drawing. In the paper, we discuss some aspects of CMOF design concerning current chalcogenide and tellurite glass choice. Also, we show the supercontinuum spectra recorded from current chalcogenide-tellurite CMOF pumped with a custom made femtosecond fibre laser at λ = 1.55 μm with the pulse duration of 400 fs.

  8. Space processing of chalcogenide glass

    NASA Technical Reports Server (NTRS)

    Ali, M. A.; Larsen, D. C.

    1976-01-01

    The manner in which the weightless, containerless nature of in-space processing can be successfully utilized to improve the quality of infrared transmitting chalcogenide glasses was investigated. The following conclusions were reached: (1) Laboratory experiments have established the techniques, processes and equipment necessary for the production of high purity chalcogenide glasses. (2) Processing techniques have been successfully adopted for Ge28Sb12Se60 glass in a 1-g environment. (3) The Ge28Sb12Se60 glasses that have been processed have optical transmission around 63% (5 mm thick). (4) Laboratory experiments have established that the use of precursor materials in powdered form increases the oxygen contamination of the processed glass. This indicates that high purity precursor materials in bar or pellet form should be used. (5) Modifications were made on the MSFC acoustic levitator in an attempt to improve levitation stability during long-time experiments. Room temperature experiments on As2S3 glasses and high temperature experiments on polystyrene were conducted.

  9. Photoinduced anchoring on a chalcogenide surface

    NASA Astrophysics Data System (ADS)

    Sheremet, N.; Kurioz, Yu.; Klebanov, M.; Lyubin, V.; Slyusarenko, K.; Reznikov, Yu.

    2012-05-01

    We present basic characteristics and a model of photoinduced anchoring of liquid crystals (LCs) on a chalcogenide surface. It was found that characteristics of the alignment strongly depend on the LC material for the same chalcogenide glass. The photoalignment is partially reversible and can be controlled by changing the light polarization direction. We propose a model in which the existence of dichroic units on the chalcogenide surface and competition between two mechanisms of the photoalignment is suggested. The first mechanism is related to the light-induced anisotropy on the chalcogenide surface and results in an easy orientation axes of a LC parallel to the polarization of the incident light. The second mechanism is attributed to an energy transfer from the dichroic units after the light absorption to the LC molecules adsorbed on the chalcogenide surface. The transferred energy causes polarization-sensitive desorption of the LC molecules from the chalcogenide surface and the light-induced easy orientation axis of a LC perpendicular to the incident light polarization. The competition between these mechanisms leads to the observed change of the direction of the easy axis with the exposure.

  10. Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

    SciTech Connect

    Aminorroaya Yamini, Sima E-mail: jsnyder@caltech.edu; Dou, Shi Xue; Mitchell, David R. G.; Wang, Heng; Gibbs, Zachary M.; Pei, Yanzhong; Snyder, G. Jeffrey E-mail: jsnyder@caltech.edu

    2015-05-15

    The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe){sub (0.9−x)}(PbSe){sub 0.1}(PbS){sub x,} (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance.

  11. A highly reactive chalcogenide precursor for the synthesis of metal chalcogenide quantum dots

    NASA Astrophysics Data System (ADS)

    Jiang, Peng; Zhu, Dong-Liang; Zhu, Chun-Nan; Zhang, Zhi-Ling; Zhang, Guo-Jun; Pang, Dai-Wen

    2015-11-01

    Metal chalcogenide semiconductor nanocrystals (NCs) are ideal inorganic materials for solar cells and biomedical labeling. In consideration of the hazard and instability of alkylphosphines, the phosphine-free synthetic route has become one of the most important trends in synthesizing selenide QDs. Here we report a novel phase transfer strategy to prepare phosphine-free chalcogenide precursors. The anions in aqueous solution were transferred to toluene via electrostatic interactions between the anions and didodecyldimethylammonium bromide (DDAB). The obtained chalcogenide precursors show high reactivity with metal ions in the organic phase and could be applied to the low-temperature synthesis of various metal chalcogenide NCs based on a simple reaction between metal ions (e.g. Ag+, Pb2+, Cd2+) and chalcogenide anions (e.g. S2-) in toluene. In addition to chalcogenide anions, other anions such as BH4- ions and AuCl4- ions can also be transferred to the organic phase for synthesizing noble metal NCs (such as Ag and Au NCs).Metal chalcogenide semiconductor nanocrystals (NCs) are ideal inorganic materials for solar cells and biomedical labeling. In consideration of the hazard and instability of alkylphosphines, the phosphine-free synthetic route has become one of the most important trends in synthesizing selenide QDs. Here we report a novel phase transfer strategy to prepare phosphine-free chalcogenide precursors. The anions in aqueous solution were transferred to toluene via electrostatic interactions between the anions and didodecyldimethylammonium bromide (DDAB). The obtained chalcogenide precursors show high reactivity with metal ions in the organic phase and could be applied to the low-temperature synthesis of various metal chalcogenide NCs based on a simple reaction between metal ions (e.g. Ag+, Pb2+, Cd2+) and chalcogenide anions (e.g. S2-) in toluene. In addition to chalcogenide anions, other anions such as BH4- ions and AuCl4- ions can also be transferred to

  12. Preparation and processing of rare earth chalcogenides

    SciTech Connect

    Gschneidner, K.A. Jr.

    1998-10-01

    Rare earth chalcogenides are initially prepared by a direct combination of the pure rare earth metal and the pure chalcogen element with or without a catalyst. The use of iodine (10 to 100 mg) as a fluxing agent (catalyst), especially to prepare heavy lanthanide chalcogenides, greatly speeds up the formation of the rare earth chalcogenide. The resultant powders are consolidated by melting, pressure assisted sintering (PAS), or pressure assisted reaction sintering (PARS) to obtain near theoretical density solids. Mechanical alloying is a useful technique for preparing ternary alloys. In addition, mechanical alloying and mechanical milling can be used to form metastable allotropic forms of the yttrium and heavy lanthanide sulfides. Chemical analysis techniques are also described because it is strongly recommended that samples prepared by melting should have their chemical compositions verified because of chalcogen losses in the melting step.

  13. Chalcogenide Nanoionic-based Radio Frequency Switch

    NASA Technical Reports Server (NTRS)

    Nessel, James (Inventor); Lee, Richard (Inventor)

    2013-01-01

    A nonvolatile nanoionic switch is disclosed. A thin layer of chalcogenide glass engages a substrate and a metal selected from the group of silver and copper photo-dissolved in the chalcogenide glass. A first oxidizable electrode and a second inert electrode engage the chalcogenide glass and are spaced apart from each other forming a gap therebetween. A direct current voltage source is applied with positive polarity applied to the oxidizable electrode and negative polarity applied to the inert electrode which electrodeposits silver or copper across the gap closing the switch. Reversing the polarity of the switch dissolves the electrodeposited metal and returns it to the oxidizable electrode. A capacitor arrangement may be formed with the same structure and process.

  14. Chalcogenide Nanoionic-Based Radio Frequency Switch

    NASA Technical Reports Server (NTRS)

    Nessel, James (Inventor); Lee, Richard (Inventor)

    2011-01-01

    A nonvolatile nanoionic switch is disclosed. A thin layer of chalcogenide glass engages a substrate and a metal selected from the group of silver and copper photo-dissolved in the chalcogenide glass. A first oxidizable electrode and a second inert electrode engage the chalcogenide glass and are spaced apart from each other forming a gap there between. A direct current voltage source is applied with positive polarity applied to the oxidizable electrode and negative polarity applied to the inert electrode which electrodeposits silver or copper across the gap closing the switch. Reversing the polarity of the switch dissolves the electrodeposited metal and returns it to the oxidizable electrode. A capacitor arrangement may be formed with the same structure and process.

  15. A highly reactive chalcogenide precursor for the synthesis of metal chalcogenide quantum dots.

    PubMed

    Jiang, Peng; Zhu, Dong-Liang; Zhu, Chun-Nan; Zhang, Zhi-Ling; Zhang, Guo-Jun; Pang, Dai-Wen

    2015-12-01

    Metal chalcogenide semiconductor nanocrystals (NCs) are ideal inorganic materials for solar cells and biomedical labeling. In consideration of the hazard and instability of alkylphosphines, the phosphine-free synthetic route has become one of the most important trends in synthesizing selenide QDs. Here we report a novel phase transfer strategy to prepare phosphine-free chalcogenide precursors. The anions in aqueous solution were transferred to toluene via electrostatic interactions between the anions and didodecyldimethylammonium bromide (DDAB). The obtained chalcogenide precursors show high reactivity with metal ions in the organic phase and could be applied to the low-temperature synthesis of various metal chalcogenide NCs based on a simple reaction between metal ions (e.g. Ag(+), Pb(2+), Cd(2+)) and chalcogenide anions (e.g. S(2-)) in toluene. In addition to chalcogenide anions, other anions such as BH4(-) ions and AuCl4(-) ions can also be transferred to the organic phase for synthesizing noble metal NCs (such as Ag and Au NCs). PMID:26531253

  16. Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

    NASA Astrophysics Data System (ADS)

    Virk, Naunidh; Yazyev, Oleg V.

    2016-02-01

    Binary bismuth chalcogenides Bi2Se3, Bi2Te3, and related materials are currently being extensively investigated as the reference topological insulators (TIs) due to their simple surface-state band dispersion (single Dirac cone) and relatively large bulk band gaps. Nanostructures of TIs are of particular interest as an increased surface-to-volume ratio enhances the contribution of surfaces states, meaning they are promising candidates for potential device applications. So far, the vast majority of research efforts have focused on the low-energy (0001) surfaces, which correspond to natural cleavage planes in these layered materials. However, the surfaces of low-dimensional nanostructures (nanoplatelets, nanowires, nanoribbons) inevitably involve higher-index facets. We perform a systematic ab initio investigation of the surfaces of bismuth chalcogenide TI nanostructures characterized by different crystallographic orientations, atomic structures and stoichiometric compositions. We find several stable terminations of high-index surfaces, which can be realized at different values of the chemical potential of one of the constituent elements. For the uniquely defined stoichiometric termination, the topological Dirac fermion states are shown to be strongly anisotropic with a clear dependence of Fermi velocities and spin polarization on the surface orientation. Self-doping effects and the presence of topologically trivial mid-gap states are found to characterize the non-stoichiometric surfaces. The results of our study pave the way towards experimental control of topologically protected surface states in bismuth chalcogenide nanostructures.

  17. Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

    PubMed Central

    Virk, Naunidh; Yazyev, Oleg V.

    2016-01-01

    Binary bismuth chalcogenides Bi2Se3, Bi2Te3, and related materials are currently being extensively investigated as the reference topological insulators (TIs) due to their simple surface-state band dispersion (single Dirac cone) and relatively large bulk band gaps. Nanostructures of TIs are of particular interest as an increased surface-to-volume ratio enhances the contribution of surfaces states, meaning they are promising candidates for potential device applications. So far, the vast majority of research efforts have focused on the low-energy (0001) surfaces, which correspond to natural cleavage planes in these layered materials. However, the surfaces of low-dimensional nanostructures (nanoplatelets, nanowires, nanoribbons) inevitably involve higher-index facets. We perform a systematic ab initio investigation of the surfaces of bismuth chalcogenide TI nanostructures characterized by different crystallographic orientations, atomic structures and stoichiometric compositions. We find several stable terminations of high-index surfaces, which can be realized at different values of the chemical potential of one of the constituent elements. For the uniquely defined stoichiometric termination, the topological Dirac fermion states are shown to be strongly anisotropic with a clear dependence of Fermi velocities and spin polarization on the surface orientation. Self-doping effects and the presence of topologically trivial mid-gap states are found to characterize the non-stoichiometric surfaces. The results of our study pave the way towards experimental control of topologically protected surface states in bismuth chalcogenide nanostructures. PMID:26847409

  18. Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures.

    PubMed

    Virk, Naunidh; Yazyev, Oleg V

    2016-01-01

    Binary bismuth chalcogenides Bi2Se3, Bi2Te3, and related materials are currently being extensively investigated as the reference topological insulators (TIs) due to their simple surface-state band dispersion (single Dirac cone) and relatively large bulk band gaps. Nanostructures of TIs are of particular interest as an increased surface-to-volume ratio enhances the contribution of surfaces states, meaning they are promising candidates for potential device applications. So far, the vast majority of research efforts have focused on the low-energy (0001) surfaces, which correspond to natural cleavage planes in these layered materials. However, the surfaces of low-dimensional nanostructures (nanoplatelets, nanowires, nanoribbons) inevitably involve higher-index facets. We perform a systematic ab initio investigation of the surfaces of bismuth chalcogenide TI nanostructures characterized by different crystallographic orientations, atomic structures and stoichiometric compositions. We find several stable terminations of high-index surfaces, which can be realized at different values of the chemical potential of one of the constituent elements. For the uniquely defined stoichiometric termination, the topological Dirac fermion states are shown to be strongly anisotropic with a clear dependence of Fermi velocities and spin polarization on the surface orientation. Self-doping effects and the presence of topologically trivial mid-gap states are found to characterize the non-stoichiometric surfaces. The results of our study pave the way towards experimental control of topologically protected surface states in bismuth chalcogenide nanostructures. PMID:26847409

  19. Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

    NASA Astrophysics Data System (ADS)

    Shpotyuk, O.; Ingram, A.; Shpotyuk, M.; Filipecki, J.

    2014-11-01

    A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As-S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers.

  20. Soluble rare-earth chalcogenides

    NASA Astrophysics Data System (ADS)

    Pernin, Christopher G.

    1999-11-01

    The cluster Eu8(DMF)13(mu4-O)(mu 3-OH)12(Se3)(Se4)2(Se 5)2 was synthesized from the reaction of EuCl3 dissolved in tetrahydrofaran with K2Se4 dissolved in N,N-dimethylformamide (DMF). The Eu8(O)(OH)12 10+ core is the first example such a polyoxometallo-core. The compound is further unusual in that it contains three different polyselenide chain lengths attaching adjacent Eu atoms. A similar reaction between Ln Cl3·6H2O and K2Se4 in DMF was found to produce the cluster compounds Gd8(DMF) 13(mu4-O)(mu3-OH)12(Se3)(Se 4)2(Se5)2, Yb8 (DMF) 11(mu4-O)(mu3-OH)12(Se4) 2(Se5)2Cl2·(DMF), and Y 8(DMF)12(mu4-O)(mu3-OH)12 (Se4)4Cl2·(DMF)6. Each of these clusters has a similar Ln8(mu 4-OH)(mu3-OH)1210+ core coordinated by a variety of polyselenide and chloride ligands. The organometallic rare-earth chalcogenide compounds (C5H 5)2Y [N( Q PPh2)2] ( Q = S, Se) have been prepared in good yield from the protonolysis reaction between CP3Y and HN( Q PPh2)2 in THF. In both compounds, the [N( Q PPh2)2]-- ligand is bound eta 3 to the Y center. The Y atom is also coordinated to two (C5 H5)-- ligands and so is formally 9-coordinate. 1H, 31P, 77Se, and 89Y NMR data indicate that the solid state connectivity is retained in solution. The compounds (C5H5)2Ln[N( Q PPh2)2] (Ln = La, Gd, Er, Yb, for Q = Se; Ln = Yb for Q = S) were synthesized. The series of compounds indicates that the smaller rare-earth elements cannot accommodate eta3-bonding from the imidodiphosphinochalcogenido ligand. The compounds Y[N( Q PPh2)2]3 ( Q = S (1), Se(2)) have been synthesized from the reactions between Y[N(SiMe3)2]3 and HN( Q PPh2)2. In 1, the Y atom is surrounded by three similar [N(SPPh2)2]-- ligands bound eta3 through two S atoms and an N atom. In 2 , the Y atom is surrounded again by three [N(SePPh2) 2]-- ligands, but two are bound eta2 through the two Se atoms and the other ligand is bound eta3 through the two Se atoms and an N atom. Although a fluxional process is detected in the 31P and 77Se NMR spectra

  1. Understanding the Effects of Dilute Sulfur Additions, and Metallization, on the Thermoelectric Properties of Pnictogen Chalcogenides and their Interfaces

    NASA Astrophysics Data System (ADS)

    Devender

    Realizing materials with high thermoelectric figure-of-merit ZT is an exacting challenge because it entails simultaneously obtaining a high Seebeck coefficient, a high electrical conductivity, and a low thermal conductivity, while these properties are usually unfavorably coupled. This thesis demonstrates multifold enhancements in the power factor in sulfur-doped binary and ternary pnictogen chalcogenide nanocrystals and assemblies, and describes the property enhancement mechanisms. The correlations between interfacial thermal and electronic transport, and interfacial diffusion and phase formation in metallized n- and p-type pnictogen chalcogenide structures are also revealed. We show that 400 ppm to 2 at.% sulfur doping can increase both Seebeck coefficient and electrical conductivity, while maintaining low thermal conductivity. Our results show that sulfur-induced property enhancements in Bi2Te 2Se are underpinned by increased density of states effective mass, unlike the mechanism of diminished bipolar charge carrier transport prevalent in sulfur-doped Bi2Te3. Exploiting such effects is anticipated to be attractive for realizing higher ZT nanomaterials. We also show that electrical contact conductivity in metallized pnictogen chalcogenide interfaces is sensitive to metal diffusion and telluride formation. In particular, Ni contacts yield the highest electrical contact conductivity and Cu the lowest, correlating with extent of metal diffusion and p-type metal-telluride formation. We finally show that pnictogen chalcogenides metallized with Sn-Ag-Cu/Ni solder-barrier bilayers exhibit ten-fold higher interfacial thermal conductance than that obtained with In/Ni bilayer metallization. Decreased interdiffusion and diminution of interfacial SnTe formation due to Ni layer correlates with the higher interfacial thermal conductance. Our findings should facilitate the design and development of pnictogen chalcogenide-based thermoelectric materials and devices.

  2. Nanoporous chalcogenides for adsorption and gas separation.

    PubMed

    Ori, Guido; Massobrio, Carlo; Pradel, Annie; Ribes, Michel; Coasne, Benoit

    2016-05-21

    The adsorption and gas separation properties of amorphous porous chalcogenides such as GeS2 are investigated using statistical mechanics molecular simulation. Using a realistic molecular model of such amorphous adsorbents, we show that they can be used efficiently to separate different gases relevant to environmental and energy applications (H2, CO2, CH4, N2). In addition to shedding light on the microscopic adsorption mechanisms, we show that coadsorption in this novel class of porous materials can be described using the ideal adsorbed solution theory (IAST). Such a simple thermodynamic model, which allows avoiding complex coadsorption measurements, describes the adsorption of mixture from pure component adsorption isotherms. Our results, which are found to be in good agreement with available experimental data, paves the way for the design of gas separation membranes using the large family of porous chalcogenides. PMID:27126718

  3. Photonic crystal fibers based on chalcogenide glasses

    NASA Astrophysics Data System (ADS)

    Adam, J. L.; Troles, J.; Brilland, L.; Coulombier, Q.; Chartier, T.

    2010-10-01

    Chalcogenide glasses are known for their large transparency in the mid-infrared and their high refractive index (>2). They present also a high non-linear coefficient (n2), 100 to 1000 times larger than for silica, depending on the composition. An original way to obtain single-mode fibers is to design microstructured optical fibers (MOFs). These fibers present unique optical properties thanks to the high degree of freedom in the design of their geometrical structure. A classical method to realize MOFs is the stack-and-draw technique. However, with chalcogenide glasses, that technique induces optical losses at the interfaces in the stack of capillaries. In consequence, we have developed a new casting method to fabricate the chalcogenide preform. This method permits to obtain optical losses around 1 dB/m at 1.55 μm and 0.3 dB/m in the mid-IR region. Various chalcogenide microstructured fibers working in the IR range were prepared in order to take advantage of the non-linear properties of these glasses and of the original MOF properties. For example, fibers with small effective mode area (Aeff < 10 μm2) have been realized to exacerbate the non-linear optical properties. Such fibers will find applications for signal regeneration in telecom, and for the generation of supercontinuum sources. On the contrary, for military applications in the 3-5 and 8-12 μm windows, large effective mode area and single mode fibers have been designed to permit the propagation of high-power gaussian laser beams.

  4. Structural properties of rare earth chalcogenides

    NASA Astrophysics Data System (ADS)

    Bhardwaj, Ramakant; Bhardwaj, Purvee; Singh, Sadhna

    2016-05-01

    The pressure induced NaCl (B1) to CsCl (B2) structural phase transition of rare earth mono-chalcogenide (PuTe) has been investigated in this paper. A modified interaction potential model (MIPM) (including the covalency effect) has been developed. Phase transition pressures are associated with a sudden collapse in volume. The phase transition pressures and associated volume collapses obtained from present potential model show a generally good agreement with available experimental data than others.

  5. Electronic and optical properties of mixed Be-chalcogenides

    NASA Astrophysics Data System (ADS)

    Khan, Imad; Ahmad, Iftikhar; Zhang, D.; Rahnamaye Aliabad, H. A.; Jalali Asadabadi, S.

    2013-02-01

    The electronic and optical properties of BeSxSe1-x, BeSxTe1-x and BeSexTe1-x, (0≤x≤1) are studied using the highly accurate modified Beck and Johnson (mBJ) potential. The binary Be-chalcogenides are wide and indirect band gap semiconductors and hence they are not efficient materials for optoelectronics. In order to modify them into optically active materials, the anion chalcogen atoms are partially replaced by other chalcogen atoms like BeSxSe1-x, BeSxTe1-x and BeSexTe1-x (0≤x≤1). The modified ternary compounds are of direct band gap nature and hence they are optically active. Some of these direct band gap materials are lattice matched with silicon and can possibly replace Si in semiconductor devices. Keeping in view the importance of these materials in optoelectronics, the optical properties of BeSxSe1-x, BeSxTe1-x and BeSexTe1-x in the full composition range are investigated. It is found that these materials are transparent in the IR, visible and near UV spectral regions. The alloys for the most of the concentrations have band gaps larger than 3 eV, so it is expected that they may be efficient materials for blue, green and UV light emitting diodes.

  6. Chalcogenide Glass Optical Waveguides for Infrared Biosensing

    PubMed Central

    Anne, Marie-Laure; Keirsse, Julie; Nazabal, Virginie; Hyodo, Koji; Inoue, Satoru; Boussard-Pledel, Catherine; Lhermite, Hervé; Charrier, Joël; Yanakata, Kiyoyuki; Loreal, Olivier; Le Person, Jenny; Colas, Florent; Compère, Chantal; Bureau, Bruno

    2009-01-01

    Due to the remarkable properties of chalcogenide (Chg) glasses, Chg optical waveguides should play a significant role in the development of optical biosensors. This paper describes the fabrication and properties of chalcogenide fibres and planar waveguides. Using optical fibre transparent in the mid-infrared spectral range we have developed a biosensor that can collect information on whole metabolism alterations, rapidly and in situ. Thanks to this sensor it is possible to collect infrared spectra by remote spectroscopy, by simple contact with the sample. In this way, we tried to determine spectral modifications due, on the one hand, to cerebral metabolism alterations caused by a transient focal ischemia in the rat brain and, in the other hand, starvation in the mouse liver. We also applied a microdialysis method, a well known technique for in vivo brain metabolism studies, as reference. In the field of integrated microsensors, reactive ion etching was used to pattern rib waveguides between 2 and 300 μm wide. This technique was used to fabricate Y optical junctions for optical interconnections on chalcogenide amorphous films, which can potentially increase the sensitivity and stability of an optical micro-sensor. The first tests were also carried out to functionalise the Chg planar waveguides with the aim of using them as (bio)sensors. PMID:22423209

  7. The Surface Chemistry of Metal Chalcogenide Nanocrystals

    NASA Astrophysics Data System (ADS)

    Anderson, Nicholas Charles

    The surface chemistry of metal chalcogenide nanocrystals is explored through several interrelated analytical investigations. After a brief discussion of the nanocrystal history and applications, molecular orbital theory is used to describe the electronic properties of semiconductors, and how these materials behave on the nanoscale. Quantum confinement plays a major role in dictating the optical properties of metal chalcogenide nanocrystals, however surface states also have an equally significant contribution to the electronic properties of nanocrystals due to the high surface area to volume ratio of nanoscale semiconductors. Controlling surface chemistry is essential to functionalizing these materials for biological imaging and photovoltaic device applications. To better understand the surface chemistry of semiconducting nanocrystals, three competing surface chemistry models are presented: 1.) The TOPO model, 2.) the Non-stoichiometric model, and 3.) the Neutral Fragment model. Both the non-stoichiometric and neutral fragment models accurately describe the behavior of metal chalcogenide nanocrystals. These models rely on the covalent bond classification system, which divides ligands into three classes: 1.) X-type, 1-electron donating ligands that balance charge with excess metal at the nanocrystal surface, 2.) L-type, 2-electron donors that bind metal sites, and 3.) Z-type, 2-electron acceptors that bind chalcogenide sites. Each of these ligand classes is explored in detail to better understand the surface chemistry of metal chalcogenide nanocrystals. First, chloride-terminated, tri-n-butylphosphine (Bu 3P) bound CdSe nanocrystals were prepared by cleaving carboxylate ligands from CdSe nanocrystals with chlorotrimethylsilane in Bu3P solution. 1H and 31P{1H} nuclear magnetic resonance spectra of the isolated nanocrystals allowed assignment of distinct signals from several free and bound species, including surface-bound Bu3P and [Bu3P-H]+[Cl]- ligands as well as a Bu

  8. Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films

    DOEpatents

    Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

    2000-01-01

    A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

  9. A Photochemical Route to Metal Chalcogenide Nanomaterials

    NASA Astrophysics Data System (ADS)

    Warwick, P. C. Temple

    Semiconducting nanoscale metal chaicogenides are an important class of materials used in optoelectronics, photovoltaics, and thermoelectric applications. The properties of nanomaterials are directly influenced by their size and shape. Because of this a great deal of research has been focused on the size-controllable synthesis of these materials. Metal chalcogenide nanomaterial:; have been synthesized using solvothermal, sonochemical, pyrolysis, and microwave heating methods, which require high temperature and pressure. Furthermore, the reactants, solvents, and reaction conditions are highly specific for each method as well as the desired nanomaterial. We have developed a unique photochemical method for the generalized synthesis of metal chalcogenide nanomateri GIs. The photolysis is conducted at 20° C, which is substantially lower than current solution based methods. Furthermore, the low temperature allows conventional solvents to be used. We have synthesized Culn2, InS, SbSe, and E2S3 (where E = Sb and Bi) nanopz,rticles with sizes ranging from 5 - 100 nm by photolysis of photoreactive single source precursors (SSPs). The SSPs are designed to photochemically decompose to yield the desired material with the proper stoichiometry. Our SSPs contain photoactive benzyl-X ligands (where X = S or Se), which are known to undergo bond homolysis at the benzyl-X bond. The results indicate that the reactions proceed by bond homolysis to produce reactive radicals species that self-assemble to yield the desired nanomaterials. Furthermore, we have used the same photochemical method as a route to functiorialize a Si surface with bismuth sulfide. We have also investigated the photochemistry of Ph2PBn (where Bn = CH2Ph). Upon photolysis, the P-Bn bond cleaves and yields tetraphenyl diphosphine (Ph4P2) and bibenzyl (PhCH2CH2Ph). These results support the observations made during the photochemical metal chalcogenide nanomaterials synthesis.

  10. Superconductivity in Pd, Ir, and Pt chalcogenide

    NASA Astrophysics Data System (ADS)

    Oh, Yoon Seok; Yang, Junjie; Choi, Y. J.; Hogan, A.; Horibe, Y.; Cheong, S.-W.

    2012-02-01

    Large spin-orbit coupling in materials with heavy chalcogens can result in unique quantum states or functional properties such as topological insulator, giant thermoelectric power, and superconductivity. When materials contain heavy cations in addition to heavy chalcogens, spin-orbit coupling can be further enhanced. For these reasons, we have studied the superconductivity of Pd, Ir, and Pt tellurides and selenides. In the exploration of these chalcogenides, we have focused on the competition between superconductivity and charge density wave that is associated with superlattice reflections.

  11. Synthesis and structures of metal chalcogenide precursors

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Duraj, Stan A.; Eckles, William E.; Andras, Maria T.

    1990-01-01

    The reactivity of early transition metal sandwich complexes with sulfur-rich molecules such as dithiocarboxylic acids was studied. Researchers recently initiated work on precursors to CuInSe2 and related chalcopyrite semiconductors. Th every high radiation tolerance and the high absorption coefficient of CuInSe2 makes this material extremely attractive for lightweight space solar cells. Their general approach in early transition metal chemistry, the reaction of low-valent metal complexes or metal powders with sulfur and selenium rich compounds, was extended to the synthesis of chalcopyrite precursors. Here, the researchers describe synthesis, structures, and and routes to single molecule precursors to metal chalcogenides.

  12. Chalcogenide three-dimensional photonic structures

    NASA Astrophysics Data System (ADS)

    Feigel, A. I.; Kotler, Zvi; Sfez, Bruno; Arsh, A.; Klebanov, Matvei; Lyubin, Victor

    2001-05-01

    AsSeTe/AsSe chalcogenide glasses are photosensitive materials with large refractive index. These properties make these glasses suitable for the fabrication of photonic crystals, waveguide components and MOEMS. We present in this article fabrication of 3D photonic crystals, composed from AsSeTe and air, with sub-micron feature size. The method of fabrication is relatively simple and cheap using only vapor deposition and optical holographic lithography. The interferometric alignment allows to eliminate requirement for a mask aligner.

  13. Superconductivity in binary FeS single crystals

    NASA Astrophysics Data System (ADS)

    Campbell, Daniel; Eckberg, Chris; Saha, Shanta; Borg, Chris; Zhou, Xiuquan; Rodriguez, Efrain; Paglione, Johnpierre

    FeS is the third recently discovered member of the superconducting binary iron-chalcogenide series that includes the well-known FeSe and FeSe1-xTex members. Grown via hydrothermal techniques, single crystals of FeS have been characterized using transport, thermodynamic and magnetic techniques. We will review experimental results and compare with the unconventional superconducting properties of the selenide and telluride counterparts.

  14. Vortex pinning properties in Fe-chalcogenides

    NASA Astrophysics Data System (ADS)

    Leo, A.; Grimaldi, G.; Guarino, A.; Avitabile, F.; Nigro, A.; Galluzzi, A.; Mancusi, D.; Polichetti, M.; Pace, S.; Buchkov, K.; Nazarova, E.; Kawale, S.; Bellingeri, E.; Ferdeghini, C.

    2015-12-01

    Among the families of iron-based superconductors, the 11-family is one of the most attractive for high field applications at low temperatures. Optimization of the fabrication processes for bulk, crystalline and/or thin film samples is the first step in producing wires and/or tapes for practical high power conductors. Here we present the results of a comparative study of pinning properties in iron-chalcogenides, investigating the flux pinning mechanisms in optimized Fe(Se{}1-xTe x ) and FeSe samples by current-voltage characterization, magneto-resistance and magnetization measurements. In particular, from Arrhenius plots in magnetic fields up to 9 T, the activation energy is derived as a function of the magnetic field, {U}0(H), whereas the activation energy as a function of temperature, U(T), is derived from relaxation magnetization curves. The high pinning energies, high upper critical field versus temperature slopes near critical temperatures, and highly isotropic pinning properties make iron-chalcogenide superconductors a technological material which could be a real competitor to cuprate high temperature superconductors for high field applications.

  15. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    SciTech Connect

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  16. Laser-power delivery using chalcogenide glass fibers

    NASA Astrophysics Data System (ADS)

    Hilton, Albert R., Sr.; Hilton, A. R., Jr.; McCord, James; Loretz, Thomas J.

    1997-04-01

    During the last 15 years, numerous programs have been carried out in the U.S., UK, France, Japan, Israel and Russia aimed at providing a flexible chalcogenide glass fiber suited for delivery of power from a carbon dioxide laser emitting at 10.6 micrometer. The success of these programs has been modest at best with output power limited to 10 watts or less. The purpose of this paper is to examine chalcogenide glasses used for fiber from a thermal lensing standpoint.

  17. First principles thermodynamical modeling of the binodal and spinodal curves in lead chalcogenides.

    PubMed

    Usanmaz, Demet; Nath, Pinku; Plata, Jose J; Hart, Gus L W; Takeuchi, Ichiro; Nardelli, Marco Buongiorno; Fornari, Marco; Curtarolo, Stefano

    2016-02-14

    High-throughput ab initio calculations, cluster expansion techniques, and thermodynamic modeling have been synergistically combined to characterize the binodal and the spinodal decompositions features in the pseudo-binary lead chalcogenides PbSe-PbTe, PbS-PbTe, and PbS-PbSe. While our results agree with the available experimental data, our consolute temperatures substantially improve with respect to previous computational modeling. The computed phase diagrams corroborate that in ad hoc synthesis conditions the formation of nanostructure may occur justifying the low thermal conductivities in these alloys. The presented approach, making a rational use of online quantum repositories, can be extended to study thermodynamical and kinetic properties of materials of technological interest. PMID:26811862

  18. Two-Dimensional Chalcogenides: Material Synthesis and Nano-Device Applications

    NASA Astrophysics Data System (ADS)

    Jacobs-Gedrim, Robin

    Low-dimensional nanostructures exhibit distinct properties from their bulk counterparts. Here the synthesis of novel low-dimensional nanostructures is demonstrated using both top down and bottom up processes and their properties are investigated. Two-dimensional (2D) binary sesquichalcogenides are introduced as a viable material platform for phase change random access memory, photodetection, and the investigation of topological insulator surface states. An exponential relationship is observed between layer thickness and energy consumption during switching of 2D phase change devices, ultra-high responsivity in 2D photoresistors, and surface-rich conduction in 2D topological insulator nanoplates. Additionally, methods for the assessment of chemical purity, stoichiometry, and dimensions of two-dimensional nanomaterials are introduced for the first time. The unique properties of nanoscaled chalcogenide materials may enable future technologies such as synaptronics, universal memory and machine vision, as well as providing a platform for fundamental research on the physics of condensed matter systems.

  19. Integrated flexible chalcogenide glass photonic devices

    NASA Astrophysics Data System (ADS)

    Li, Lan; Lin, Hongtao; Qiao, Shutao; Zou, Yi; Danto, Sylvain; Richardson, Kathleen; Musgraves, J. David; Lu, Nanshu; Hu, Juejun

    2014-08-01

    Photonic integration on thin flexible plastic substrates is important for emerging applications ranging from the realization of flexible interconnects to conformal sensors applied to the skin. Such devices are traditionally fabricated using pattern transfer, which is complicated and has limited integration capacity. Here, we report a convenient monolithic approach to realize flexible, integrated high-index-contrast chalcogenide glass photonic devices. By developing local neutral axis designs and suitable fabrication techniques, we realize a suite of photonic devices including waveguides, microdisk resonators, add-drop filters and photonic crystals that have excellent optical performance and mechanical flexibility, enabling repeated bending down to sub-millimetre radii without measurable performance degradation. The approach offers a facile fabrication route for three-dimensional high-index-contrast photonics that are difficult to create using traditional methods.

  20. Bipolar switching in chalcogenide phase change memory

    NASA Astrophysics Data System (ADS)

    Ciocchini, N.; Laudato, M.; Boniardi, M.; Varesi, E.; Fantini, P.; Lacaita, A. L.; Ielmini, D.

    2016-07-01

    Phase change materials based on chalcogenides are key enabling technologies for optical storage, such as rewritable CD and DVD, and recently also electrical nonvolatile memory, named phase change memory (PCM). In a PCM, the amorphous or crystalline phase affects the material band structure, hence the device resistance. Although phase transformation is extremely fast and repeatable, the amorphous phase suffers structural relaxation and crystallization at relatively low temperatures, which may affect the temperature stability of PCM state. To improve the time/temperature stability of the PCM, novel operation modes of the device should be identified. Here, we present bipolar switching operation of PCM, which is interpreted by ion migration in the solid state induced by elevated temperature and electric field similar to the bipolar switching in metal oxides. The temperature stability of the high resistance state is demonstrated and explained based on the local depletion of chemical species from the electrode region.

  1. Multimode supercontinuum generation in chalcogenide glass fibres.

    PubMed

    Kubat, Irnis; Bang, Ole

    2016-02-01

    Mid-infrared supercontinuum generation is considered in chalcogenide fibres when taking into account both polarisations and the necessary higher order modes. In particular we focus on high pulse energy supercontinuum generation with long pump pulses. The modeling indicates that when only a single polarisation in the fundamental mode is considered the obtainable supercontinuum bandwidth is substantially exaggerated compared to when both polarisations are taken into account. Our modeling shows that if the pump pulse is short enough (≤ 10 ps) then higher order modes are not important because of temporal walk-off. In contrast long pump pulses (≥ 40 ps) will efficiently excite higher order modes through Raman scattering, which will deplete the fundamental mode of energy and limit the possibility of obtaining a broadband supercontinuum. PMID:26906826

  2. Opal photonic crystals infiltrated with chalcogenide glasses

    SciTech Connect

    Astratov, V. N.; Adawi, A. M.; Skolnick, M. S.; Tikhomirov, V. K.; Lyubin, V.; Lidzey, D. G.; Ariu, M.; Reynolds, A. L.

    2001-06-25

    Composite opal structures for nonlinear applications are obtained by infiltration with chalcogenide glasses As{sub 2}S{sub 3} and AsSe by precipitation from solution. Analysis of spatially resolved optical spectra reveals that the glass aggregates into submillimeter areas inside the opal. These areas exhibit large shifts in the optical stop bands by up to 80 nm, and by comparison with modelling are shown to have uniform glass filling factors of opal pores up to 40%. Characterization of the domain structure of the opals prior to infiltration by large area angle-resolved spectroscopy is an important step in the analysis of the properties of the infiltrated regions. {copyright} 2001 American Institute of Physics.

  3. Bipolar switching in chalcogenide phase change memory.

    PubMed

    Ciocchini, N; Laudato, M; Boniardi, M; Varesi, E; Fantini, P; Lacaita, A L; Ielmini, D

    2016-01-01

    Phase change materials based on chalcogenides are key enabling technologies for optical storage, such as rewritable CD and DVD, and recently also electrical nonvolatile memory, named phase change memory (PCM). In a PCM, the amorphous or crystalline phase affects the material band structure, hence the device resistance. Although phase transformation is extremely fast and repeatable, the amorphous phase suffers structural relaxation and crystallization at relatively low temperatures, which may affect the temperature stability of PCM state. To improve the time/temperature stability of the PCM, novel operation modes of the device should be identified. Here, we present bipolar switching operation of PCM, which is interpreted by ion migration in the solid state induced by elevated temperature and electric field similar to the bipolar switching in metal oxides. The temperature stability of the high resistance state is demonstrated and explained based on the local depletion of chemical species from the electrode region. PMID:27377822

  4. Bipolar switching in chalcogenide phase change memory

    PubMed Central

    Ciocchini, N.; Laudato, M.; Boniardi, M.; Varesi, E.; Fantini, P.; Lacaita, A. L.; Ielmini, D.

    2016-01-01

    Phase change materials based on chalcogenides are key enabling technologies for optical storage, such as rewritable CD and DVD, and recently also electrical nonvolatile memory, named phase change memory (PCM). In a PCM, the amorphous or crystalline phase affects the material band structure, hence the device resistance. Although phase transformation is extremely fast and repeatable, the amorphous phase suffers structural relaxation and crystallization at relatively low temperatures, which may affect the temperature stability of PCM state. To improve the time/temperature stability of the PCM, novel operation modes of the device should be identified. Here, we present bipolar switching operation of PCM, which is interpreted by ion migration in the solid state induced by elevated temperature and electric field similar to the bipolar switching in metal oxides. The temperature stability of the high resistance state is demonstrated and explained based on the local depletion of chemical species from the electrode region. PMID:27377822

  5. Solution-processing of chalcogenide materials for device applications

    NASA Astrophysics Data System (ADS)

    Zha, Yunlai

    Chalcogenide glasses are well-known for their desirable optical properties, which have enabled many infrared applications in the fields of photonics, medicine, environmental sensing and security. Conventional deposition methods such as thermal evaporation, chemical vapor deposition, sputtering or pulse laser deposition are efficient for fabricating structures on flat surfaces. However, they have limitations in deposition on curved surfaces, deposition of thick layers and component integration. In these cases, solution-based methods, which involve the dissolution of chalcogenide glasses and processing as a liquid, become a better choice for their flexibility. After proper treatment, the associated structures can have similar optical, chemical and physical properties to the bulk. This thesis presents an in-depth study of solution-processing chalcogenide glasses, starting from the "solution state" to the "film state" and the "structure state". Firstly, chalcogenide dissolution is studied to reveal the mechanisms at molecular level and build a foundation for material processing. Dissolution processes for various chalcogenide solvent pairs are reviewed and compared. Secondly, thermal processing, in the context of high temperature annealing, is explained along with the chemical and physical properties of the annealed films. Another focus is on nanopore formation in propylamine-processed arsenic sulfide films. Pore density changes with respect to annealing temperatures and durations are characterized. Base on a proposed vacancy coalescence theory, we have identified new dissolution strategies and achieved the breakthrough of pore-free film deposition. Thirdly, several solution methods developed along with the associated photonic structures are demonstrated. The first example is "spin-coating and lamination", which produces thick (over 10 mum) chalcogenide structures. Both homogeneous thick chalcogenide structures and heterogeneous layers of different chalcogenide glasses

  6. Binary Plutinos

    NASA Astrophysics Data System (ADS)

    Noll, Keith S.

    2015-08-01

    The Pluto-Charon binary was the first trans-neptunian binary to be identified in 1978. Pluto-Charon is a true binary with both components orbiting a barycenter located between them. The Pluto system is also the first, and to date only, known binary with a satellite system consisting of four small satellites in near-resonant orbits around the common center of mass. Seven other Plutinos, objects in 3:2 mean motion resonance with Neptune, have orbital companions including 2004 KB19 reported here for the first time. Compared to the Cold Classical population, the Plutinos differ in the frequency of binaries, the relative sizes of the components, and their inclination distribution. These differences point to distinct dynamical histories and binary formation processes encountered by Plutinos.

  7. Relaxation oscillations in chalcogenide phase change memory

    NASA Astrophysics Data System (ADS)

    Nardone, M.; Karpov, V. G.; Karpov, I. V.

    2010-03-01

    The results of a comprehensive experimental study of relaxation oscillations in chalcogenide phase change memory are presented. Extending the previous work, voltage and current oscillations were measured over much longer periods of time and with a broad range of applied voltages, load resistances, and device thicknesses. The effects of various reset voltage levels and material types were also considered. Several types of oscillation patterns were observed; most were continuous through the measurement period while others exhibited few or no oscillations. Also observed were two distinct regimes of oscillations; one of stable amplitudes followed by one of decaying amplitudes. The duration of the stable regime and the total time for oscillation decay were found to be directly proportional to the device thickness. In addition, temporal drift of the threshold voltage was observed which provided a method for measuring the variation in the drift coefficient between different materials. A numerical model was developed to simulate oscillations and extrapolate our results to lower circuit time constants. The physical mechanism of oscillations and their stochastic nature are effectively described in the framework of field-induced nucleation, while the transition from stable to decaying amplitudes is attributed to concomitant thermally induced nucleation.

  8. Hybrid photovoltaic devices based on chalcogenide nanostructures

    NASA Astrophysics Data System (ADS)

    de Freitas, Jilian N.; Alves, João. Paulo C.; Korala, Lasantha; Brock, Stephanie L.; Nogueira, Ana F.

    2012-09-01

    Solar cells based on the combination of conjugated polymers and fullerenes are among the most promising devices for low-cost solar energy conversion. Significant improvements in the efficiency have been accomplished, but some bottlenecks still persist. The substitution of fullerenes by inorganic semiconductor nanoparticles, especially CdSe and CdS, has been investigated as a promising alternative. In this work, we highlight two aspects to be considered in the pursuit of more efficient devices. By comparing different polymer/CdSe systems, we show how the polymer structure can be used to tune the charge transfer from the polymer to CdSe. Even if this process is efficient, the charges will be trapped in the inorganic phase if the charge carrier transport of the nanoparticles is poor. An elegant way to improve the electron hopping is to form an electrically integrated network of nanoparticles. The use of chalcogenide aerogels is a new alternative which may be interesting for applications requiring maximal transport of charge and is also discussed here.

  9. Hybrid polymer photonic crystal fiber with integrated chalcogenide glass nanofilms.

    PubMed

    Markos, Christos; Kubat, Irnis; Bang, Ole

    2014-01-01

    The combination of chalcogenide glasses with polymer photonic crystal fibers (PCFs) is a difficult and challenging task due to their different thermo-mechanical material properties. Here we report the first experimental realization of a hybrid polymer-chalcogenide PCF with integrated As2S3 glass nanofilms at the inner surface of the air-channels of a poly-methyl-methacrylate (PMMA) PCF. The integrated high refractive index glass films introduce distinct antiresonant transmission bands in the 480-900 nm wavelength region. We demonstrate that the ultra-high Kerr nonlinearity of the chalcogenide glass makes the polymer PCF nonlinear and provides a possibility to shift the transmission band edges as much as 17 nm by changing the intensity. The proposed fabrication technique constitutes a new highway towards all-fiber nonlinear tunable devices based on polymer PCFs, which at the moment is not possible with any other fabrication method. PMID:25317501

  10. Pressure and temperature induced elastic properties of rare earth chalcogenides

    NASA Astrophysics Data System (ADS)

    Shriya, S.; Singh, N.; Sapkale, R.; Varshney, M.; Varshney, Dinesh

    2016-05-01

    The pressure and temperature dependent mechanical properties as Young modulus, Thermal expansion coefficient of rare earth REX (RE = La, Pr, Eu; X = O, S, Se, and Te) chalcogenides are studied. The rare earth chalcogenides showed a structural phase transition (B1-B2). Pressure dependence of Young modulus discerns an increase in pressure inferring the hardening or stiffening of the lattice as a consequence of bond compression and bond strengthening. Suppressed Young modulus as functions of temperature infers the weakening of the lattice results in bond weakening in REX. Thermal expansion coefficient demonstrates that REX (RE = La, Pr, Eu; X = O, S, Se, and Te) chalcogenides is mechanically stiffened, and thermally softened on applied pressure and temperature.

  11. Nonlinear optical localization in embedded chalcogenide waveguide arrays

    SciTech Connect

    Li, Mingshan; Huang, Sheng; Wang, Qingqing; Chen, Kevin P.; Petek, Hrvoje

    2014-05-15

    We report the nonlinear optical localization in an embedded waveguide array fabricated in chalcogenide glass. The array, which consists of seven waveguides with circularly symmetric cross sections, is realized by ultrafast laser writing. Light propagation in the chalcogenide waveguide array is studied with near infrared laser pulses centered at 1040 nm. The peak intensity required for nonlinear localization for the 1-cm long waveguide array was 35.1 GW/cm{sup 2}, using 10-nJ pulses with 300-fs pulse width, which is 70 times lower than that reported in fused silica waveguide arrays and with over 7 times shorter interaction distance. Results reported in this paper demonstrated that ultrafast laser writing is a viable tool to produce 3D all-optical switching waveguide circuits in chalcogenide glass.

  12. High surface area graphene-supported metal chalcogenide assembly

    DOEpatents

    Worsley, Marcus A.; Kuntz, Joshua; Orme, Christine A.

    2016-04-19

    A composition comprising at least one graphene-supported assembly, which comprises a three-dimensional network of graphene sheets crosslinked by covalent carbon bonds, and at least one metal chalcogenide compound disposed on said graphene sheets, wherein the chalcogen of said metal chalcogenide compound is selected from S, Se and Te. Also disclosed are methods for making and using the graphene-supported assembly, including graphene-supported MoS.sub.2. Monoliths with high surface area and conductivity can be achieved. Lower operating temperatures in some applications can be achieved. Pore size and volume can be tuned.

  13. Optical Properties of As-Based Chalcogenide Glasses

    NASA Astrophysics Data System (ADS)

    Harea, Diana; Iovu, Maria; Iovu, Mihail; Benea, Vasile; Colomeico, Eduard; Cojocaru, Ion; Tanasescu, Cristina

    Photostructural transformations in amorphous films of chalcogenide glasses (ChG) under light irradiation are presently of scientific and practical interests. As the composition of the ChGs determines the kind of structural units and the mean coordination number, in the present work amorphous films of the chalcogenide systems As100-xSex (x = 40-98) and As40Se60:Sny (y = 0-10.0 at.% Sn) were studied. Experimental investigations of the transmission spectra and the photodarkening relaxation characteristics of the amorphous films under study, including the thickness dependence, are presented.

  14. Chalcogenide glass-based three-dimensional photonic crystals

    NASA Astrophysics Data System (ADS)

    Feigel, A.; Kotler, Z.; Sfez, B.; Arsh, A.; Klebanov, M.; Lyubin, V.

    2000-11-01

    AsSeTe chalcogenide glasses are materials that are photosensitive and have a large refractive index. These properties make these glasses particularly suitable for the fabrication of photonic crystals. We present a way to build three-dimensional photonic structures from chalcogenide glasses using vapor deposition and direct holographic writing. We show that this technique is intrinsically self-aligned, providing a simple way to build layer-by-layer photonic crystals and a four-layer structure demonstrating the principle of the technique.

  15. Recent Advances in Layered Metal Chalcogenides as Superconductors and Thermoelectric Materials: Fe-Based and Bi-Based Chalcogenides.

    PubMed

    Mizuguchi, Yoshikazu

    2016-04-01

    Recent advances in layered (Fe-based and Bi-based) chalcogenides as superconductors or functional materials are reviewed. The Fe-chalcogenide (FeCh) family are the simplest Fe-based high-Tc superconductors. The superconductivity in the FeCh family is sensitive to external or chemical pressure, and high Tc is attained when the local structure (anion height) is optimized. The Bi-chalcogenide (BiCh2 ) family are a new group of layered superconductors with a wide variety of stacking structures. Their physical properties are also sensitive to external or chemical pressure. Recently, we revealed that the emergence of superconductivity and the Tc in this family correlate with the in-plane chemical pressure. Since the flexibility of crystal structure and electronic states are an advantage of the BiCh2 family for designing functionalities, I briefly review recent developments in this family as not only superconductors but also other functional materials. PMID:26821763

  16. Theory and Experiment of Chalcogenide Materials

    NASA Astrophysics Data System (ADS)

    Prasai, Binay K.

    In this dissertation, we present the experimental and theoretical investigation of extensive properties of chalcogenide materials and their potential application in solid electrolytes and phase change memory materials. Extended X-ray absorption fine structure (EXAFS) spectroscopy was employed to study the structural properties and the results were validated from the computer simulated models through ab-initio molecular dynamic (AIMD) simulations. EXAFS analysis on Ge-Sb-Te (GST) alloys, synthesized using electrodeposition and radio frequency sputtering methods confirmed the structural similarities in Ge-Te and Sb-Te bond pairs suggesting the possibility of utilizing the electrodeposition method to grow GST alloys in nanoporous materials and thus enabling miniaturizing the phase change memory devices. The analyses of structural, electronic and optical properties of computer generated amorphous and crystalline TiO 2 confirmed the structural similarities of amorphous TiO2 with the anatase phase of crystalline TiO2 and hence recommending the possibilities of replacing the crystalline TiO2 by less processed thus cheaper form of amorphous TiO2. Moreover, the AIMD simulations of the ionic conductivity of transitions metals like Ag and Cu in Ge-Se glasses confirmed the superiority of Ag over Cu in terms of conductivity. Ag was found to be easily hopping around while Cu was often trapped. In addition, an experimental and computational investigation on Ag-doped Ge-Sb-Te alloys predicted an enhanced crystallization of Ge-Sb-Te alloys. The enhanced crystallization was related to the reduction of fraction of tetrahedral Ge relative to octahedral Ge as also reflected as the increased Ge-Te bond lengths on adding Ag. Finally, further investigation of dopant-induced modification of GST alloys with transition metals (Cu, Ag and Au) demonstrated the superiority of Ag over Cu and Au regarding crystalline speed while at ˜2% dopant level no significant structural modification was

  17. Binary stars.

    PubMed

    Paczynacuteski, B

    1984-07-20

    Most stars in the solar neighborhood are either double or multiple systems. They provide a unique opportunity to measure stellar masses and radii and to study many interesting and important phenomena. The best candidates for black holes are compact massive components of two x-ray binaries: Cygnus X-1 and LMC X-3. The binary radio pulsar PSR 1913 + 16 provides the best available evidence for gravitational radiation. Accretion disks and jets observed in close binaries offer a very good testing ground for models of active galactic nuclei and quasars. PMID:17749544

  18. Tailoring chromatic dispersion in chalcogenide-tellurite microstructured optical fiber

    NASA Astrophysics Data System (ADS)

    Kohoutek, Tomas; Duan, Zhongchao; Kawashima, Hiroyasu; Cheng, Tonglei; Suzuki, Takenobu; Matsumoto, Morio; Misumi, Takashi; Ohishi, Yasutake

    2014-08-01

    We report fabrication of a highly nonlinear hybrid microstructured optical fiber composed of chalcogenide glass core and tellurite glass cladding. The flattened chromatic dispersion can be achieved in such an optical fiber with near zero dispersion wavelength at telecommunication wavelengths λ = 1.35-1.7 μm, which cannot be achieved in chalcogenide glass optical fibers due to their high refractive index, i.e. n > 2.1. We demonstrate a hybrid 4-air hole chalcogenide-tellurite optical fiber (Δn = 0.25) with flattened chromatic dispersion around λ = 1.55 μm. In optimized 12-air hole optical fiber composed of the same glasses, the chromatic dispersion values were achieved between -20 and 32 ps/nm/km in a broad wavelength range of 1.5-3.8 μm providing the fiber with extremely high nonlinear coefficient 86,000 km-1W-1. Hybrid chalcogenide/tellurite fibers pumped with the near infrared lasers give good promise for broadband optical amplification, wavelength conversion, and supercontinuum generation in the near- to mid-infrared region.

  19. Binary Asteroids

    NASA Astrophysics Data System (ADS)

    Harris, Alan W.; Pravec, P.

    2006-06-01

    There are now nearly 100 binary asteroids known. In the last year alone, 30 binary asteroids have been discovered, half of them by lightcurves showing eclipse events. Similar to eclipsing binary stars, such observations allow determination of orbit period and sizes and shapes of the primary and secondary relative to the orbital dimension. From these parameters one can estimate the mean density of the system, and a number of dynamical properties such as total specific angular momentum, tidal evolution time scales of spins and orbit, and precession frequencies of the orbit about the primary and of the solar induced "general precession" of the system. We have extracted parameters for all systems with enough observations to allow meaningful determinations. Some preliminary results include: (1) Binaries are roughly as prevalent among small main-belt asteroids as among Near-Earth Asteroids. (2) Most binaries are partially asynchronous, with the secondary synchronized to the orbit period, but the primary still spinning much faster. This is consistent with estimated tidal damping time scales. (3) Most systems have near the critical maximum angular momentum for a single "rubble pile" body, but not much more, and some less. Thus fission appears not to be a viable formation mechanism for all binaries, although near-critical spin rate seems to play a role. (4) Orbits of the secondaries are essentially in the equatorial plane of the primary. Since most primary spins are still fast, the satellites must have been formed into low inclination orbits. (5) Precession frequencies are in the range of the shorter resonance frequencies in the solar system (tens of thousands of years), thus resonance interactions can be expected to have altered spin orientations as systems evolved slowly by tidal friction or other processes. (6) Primaries are unusually spheroidal, which is probably necessary for stability of the binary once formed.

  20. New binary systems: beaming binaries

    NASA Astrophysics Data System (ADS)

    Morales, J. C.; Weingrill, J.; Mazeh, T.; Ribas, I.

    2011-11-01

    Exoplanet missions such as COROT and Kepler are providing precise photometric follow-up data of new kinds of variable stars undetected till now. Beaming binaries are among these objects. On these binary systems, the orbital motion of their components is fast enough to produce a detectable modulation on the received flux due to relativistic effects (Zucker et al. 2007). The great advantage of these systems is that it is possible to reconstruct the radial velocity curve of the system from this photometric modulation and thus, orbital parameters such as the mass ratio and the semi-major axis can be estimated from photometry without the necessity of spectroscopic follow-up. In this poster, we briefly introduce the analysis of this kind of binary systems and in particular, the eclipsing cases.

  1. Terahertz-induced Kerr effect in amorphous chalcogenide glasses

    NASA Astrophysics Data System (ADS)

    Zalkovskij, M.; Strikwerda, A. C.; Iwaszczuk, K.; Popescu, A.; Savastru, D.; Malureanu, R.; Lavrinenko, A. V.; Jepsen, P. U.

    2013-11-01

    We have investigated the terahertz-induced third-order (Kerr) nonlinear optical properties of the amorphous chalcogenide glasses As2S3 and As2Se3. Chalcogenide glasses are known for their high optical Kerr nonlinearities which can be several hundred times greater than those of fused silica. We use high-intensity, single-cycle terahertz pulses with a maximum electrical field strength exceeding 400 kV/cm and frequency content from 0.2 to 3.0 THz. By optical Kerr-gate sampling, we measured the terahertz-induced nonlinear refractive indices at 800 nm to be n2=1.746×10-14cm2/W for As2S3 and n2=3.440×10-14 cm2/W for As2Se3.

  2. Dielectric and Conductivity Mapping of Few-Layer Metal Chalcogenides

    NASA Astrophysics Data System (ADS)

    Lai, Keji; Wu, Di; Liu, Yingnan; Ren, Yuan; Lin, Min; Peng, Hailin; Ismach, Ariel; Ghosh, Rudresh; Ruoff, Rodney

    2014-03-01

    A novel microwave impedance microscope was used to spatially map the local dielectric constant and conductivity of few-layered metal chalcogenides without the need of contact electrodes. For phase-change In2Se3 nanoplates grown on mica substrates, our results showed a sudden drop of permittivity from the bulk value for thicknesses below 5 layers and strong dielectric inhomogeneity around 4 and 5 layers. For CVD-grown MoS2 flakes on SiO2/Si wafers, we observed highly conductive localized regions within monolayer islands. These regions, which can be imaged by scanning electron microscopy and atomic force microscopy, show enhanced Raman signals and PL signal quenching. Continued imaging effort is expected to shed some light on the growth mechanism and electron physics of these quasi-2D chalcogenides.

  3. Photo-induced trimming of chalcogenide-assisted silicon waveguides.

    PubMed

    Canciamilla, Antonio; Morichetti, Francesco; Grillanda, Stefano; Velha, Philippe; Sorel, Marc; Singh, Vivek; Agarwal, Anu; Kimerling, Lionel C; Melloni, Andrea

    2012-07-01

    A chalcogenide-assisted silicon waveguide is realized by depositing a thin layer of A(2)S(3) glass onto a conventional silicon on insulator optical waveguide. The photosensitivity of the chalcogenide is exploited to locally change the optical properties of the waveguide through exposure to visible light radiation. Waveguide trimming is experimentally demonstrated by permanently shifting the resonant wavelength of a microring resonator by 6.7 nm, corresponding to an effective index increase of 1.6·10(-2). Saturation effects, trimming range, velocity and temporal stability of the process are discussed in details. Results demonstrate that photo-induced treatments can be exploited for a post-fabrication compensation of fabrication tolerances, as well as to set and reconfigure the circuit response. PMID:22772270

  4. Fabrication of chalcogenide glass waveguide for IR evanescent wave sensors

    SciTech Connect

    Ganjoo, Ashtosh; Jain, H.; Ryan, Joseph V.; Song, R.; Chanda, R.; Irudayaraj, Chanda J.; Ding, Y. J.; Pantano, C. G.

    2004-01-24

    Thin film multi-layered chalcogenide glass waveguide structures have been fabricated for evanescent wave sensing of bio toxins and other applications. Thin films of Ge containing chalcogenides have been deposited onto Si substrates, with a-GeSe2 as the cladding layer and a-GeSbSe as the core layer to form the slab waveguide. Channel waveguides have been written in the slab waveguides by appropriate light the through a mask. The photo-induced structural changes in the core layer selectively enhance refractive index at the portions of interest and thus confining the light to the channels. The waveguides have been characterized and tested for the guiding of light.

  5. Planar chalcogenide glass waveguides for IR evanescent wave sensors

    SciTech Connect

    Ganjoo, Ashtosh; Jain, H.; Yu, C.; Song, R.; Ryan, Joseph V.; Irudayaraj, Chanda J.; Ding, Y. J.; Pantano, C. G.

    2006-03-20

    Multi-layered chalcogenide glass waveguide structures have been fabricated for evanescent wave sensing of bio-toxins and other sensor applications. Thin films of Ge containing chalcogenides have been deposited onto Si substrates, with a-GeSe2 as the lower cladding layer and a-GeSbSe as the core layer, to form the slab waveguide. The absence of a defined upper cladding layer enhances the leakage necessary to sense the target molecules. Modal refractive index is estimated from the m-lines. It is shown that photo-induced structural changes by 808 nm laser light in the core layer selectively enhance refractive index in the exposed regions, and thus provide a convenient method to form channel waveguides. A thin layer of Au has been deposited on top of the core layer for the attachment of linker molecules for biosensor application; ATR confirms this.

  6. Preparation of chalcogenide glass fiber using an improved extrusion method

    NASA Astrophysics Data System (ADS)

    Jiang, Chen; Wang, Xunsi; Zhu, Minming; Xu, Huijuan; Nie, Qiuhua; Dai, Shixun; Tao, Guangming; Shen, Xiang; Cheng, Ci; Zhu, Qingde; Liao, Fangxing; Zhang, Peiquan; Zhang, Peiqing; Liu, Zijun; Zhang, Xianghua

    2016-05-01

    We developed the extrusion method to prepare arsenic-free chalcogenide glass fibers with glass cladding. By using the double nested extrusion molds and the corresponding isolated stacked extrusion method, the utilization rate of glass materials was greatly improved compared with the conventional extrusion method. Fiber preforms with optimal stability of core/cladding ratio throughout the 160 mm length were prepared using the developed extrusion method. Typical fiber structure defects between the core/cladding interface, such as bubbles, cracks, and core diameter variation, were effectively eliminated. Ge-Sb-Se/S chalcogenide glasses were used to form a core/cladding pair and fibers with core/cladding structure were prepared by thermally drawing the extruded preforms. The transmission loss, fiber bending loss, and other optical characters of the fibers were also investigated.

  7. Anomalous magneto-resistance in single crystals of silver chalcogenides

    NASA Astrophysics Data System (ADS)

    Zhang, Chenglong; Liu, Haiwen; Hua, Wei; Yuan, Zhunjun; Sun, Junliang; Xie, Xincheng; Jia, Shuang

    2015-03-01

    Silver chalcogenides have been known as quantum materials for over fifteen years but no single crystal was ever studied before. Very recently, we developed a method for growth of single crystals. Our measurements of magneto-resistance (MR) showed strong Shubnikov-de Haas (SdH) oscillations associated with a very low quantum limit. When the field is beyond this limit we observed a negative, longitudinal MR, which is believed as a fingerprint of chiral anomaly in Weyl Fermion systems.

  8. Thermionic evaporation of films of multicomponent chalcogenide semiconductors

    SciTech Connect

    Serigenko, T.I.; Gritsenko, K.P.; Kryuchin, A.A.; Petrov, V.V.; Yudin, G.Y.

    1985-08-01

    This paper describes a procedure for the preparation of thin films of multicomponent chalcogenide semiconductors of As-Te-Se and As-Te-Ge by thermionic evaporation, using a discrete evaporator. Films of thickness 20-60 nm evaporated onto a glass substrate had an adhesion of 35-40 kg/cm/sup 2/. The films have enhanced homogeneity and time stability as compared to thin films of the same composition prepared by thermal evaporation.

  9. Electronic structure of ruthenium-doped iron chalcogenides

    SciTech Connect

    Winiarski, M. J. Samsel-Czekała, M.; Ciechan, A.

    2014-12-14

    The structural and electronic properties of hypothetical Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known discrepancies between experimental data and DFT-calculated results for structural parameters of iron chalcogenides are related to the semicore atomic states which were frozen in the used here approach. Such an approach yields valid results of the electronic structures of the investigated compounds. The Ru-based chalcogenides exhibit the same topology of the Fermi surface (FS) as that of FeSe, differing only in subtle FS nesting features. Our calculations predict that the ground states of RuSe and RuTe are nonmagnetic, whereas those of the solid solutions Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te become the single- and double-stripe antiferromagnetic, respectively. However, the calculated stabilization energy values are comparable for each system. The phase transitions between these magnetic arrangements may be induced by slight changes of the chalcogen atom positions and the lattice parameters a in the unit cell of iron selenides and tellurides. Since the superconductivity in iron chalcogenides is believed to be mediated by the spin fluctuations in single-stripe magnetic phase, the Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te systems are good candidates for new superconducting iron-based materials.

  10. Binary Planets

    NASA Astrophysics Data System (ADS)

    Ryan, Keegan; Nakajima, Miki; Stevenson, David J.

    2014-11-01

    Can a bound pair of similar mass terrestrial planets exist? We are interested here in bodies with a mass ratio of ~ 3:1 or less (so Pluto/Charon or Earth/Moon do not qualify) and we do not regard the absence of any such discoveries in the Kepler data set to be significant since the tidal decay and merger of a close binary is prohibitively fast well inside of 1AU. SPH simulations of equal mass “Earths” were carried out to seek an answer to this question, assuming encounters that were only slightly more energetic than parabolic (zero energy). We were interested in whether the collision or near collision of two similar mass bodies would lead to a binary in which the two bodies remain largely intact, effectively a tidal capture hypothesis though with the tidal distortion being very large. Necessarily, the angular momentum of such an encounter will lead to bodies separated by only a few planetary radii if capture occurs. Consistent with previous work, mostly by Canup, we find that most impacts are disruptive, leading to a dominant mass body surrounded by a disk from which a secondary forms whose mass is small compared to the primary, hence not a binary planet by our adopted definition. However, larger impact parameter “kissing” collisions were found to produce binaries because the dissipation upon first encounter was sufficient to provide a bound orbit that was then rung down by tides to an end state where the planets are only a few planetary radii apart. The long computational times for these simulation make it difficult to fully map the phase space of encounters for which this outcome is likely but the indications are that the probability is not vanishingly small and since planetary encounters are a plausible part of planet formation, we expect binary planets to exist and be a non-negligible fraction of the larger orbital radius exoplanets awaiting discovery.

  11. Forced ion migration for chalcogenide phase change memory device

    NASA Technical Reports Server (NTRS)

    Campbell, Kristy A. (Inventor)

    2011-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

  12. Forced ion migration for chalcogenide phase change memory device

    NASA Technical Reports Server (NTRS)

    Campbell, Kristy A. (Inventor)

    2012-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  13. Linear and nonlinear optical properties of chalcogenide microstructured optical fibers

    NASA Astrophysics Data System (ADS)

    Trolès, Johann; Brilland, Laurent; Caillaud, Celine; Renversez, Gilles; Mechin, David; Adam, Jean-Luc

    2015-03-01

    Chalcogenide glasses are known for their large transparency in the mid-infrared and their high linear refractive index (>2). They present also a high non-linear coefficient (n2), 100 to 1000 times larger than for silica, depending on the composition. we have developed a casting method to prepare the microstructured chalcogenide preform. This method allows optical losses as low as 0.4 dB/m at 1.55 µm and less than 0.05 dB/m in the mid IR. Various chalcogenide MOFs operating in the IR range has been fabricated in order to associate the high non-linear properties of these glasses and the original MOF properties. For example, small core fibers have been drawn to enhance the non linearities for telecom applications such as signal regeneration and generation of supercontinuum sources. On another hand, in the 3-12 µm window, single mode fibers and exposed core fibers have been realized for Gaussian beams propagation and sensors applications respectively.

  14. Exfoliation of large-area transition metal chalcogenide single layers

    PubMed Central

    Magda, Gábor Zsolt; Pető, János; Dobrik, Gergely; Hwang, Chanyong; Biró, László P.; Tapasztó, Levente

    2015-01-01

    Isolating large-areas of atomically thin transition metal chalcogenide crystals is an important but challenging task. The mechanical exfoliation technique can provide single layers of the highest structural quality, enabling to study their pristine properties and ultimate device performance. However, a major drawback of the technique is the low yield and small (typically < 10 μm) lateral size of the produced single layers. Here, we report a novel mechanical exfoliation technique, based on chemically enhanced adhesion, yielding MoS2 single layers with typical lateral sizes of several hundreds of microns. The idea is to exploit the chemical affinity of the sulfur atoms that can bind more strongly to a gold surface than the neighboring layers of the bulk MoS2 crystal. Moreover, we found that our exfoliation process is not specific to MoS2, but can be generally applied for various layered chalcogenides including selenites and tellurides, providing an easy access to large-area 2D crystals for the whole class of layered transition metal chalcogenides. PMID:26443185

  15. Forced Ion Migration for Chalcogenide Phase Change Memory Device

    NASA Technical Reports Server (NTRS)

    Campbell, Kristy A (Inventor)

    2013-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  16. Chalcogenide material strengthening through the lens molding process

    NASA Astrophysics Data System (ADS)

    Nelson, J.; Scordato, M.; Lucas, Pierre; Coleman, Garrett J.

    2016-05-01

    The demand for infrared transmitting materials has grown steadily for several decades as markets realize new applications for longer wavelength sensing and imaging. With this growth has come the demand for new and challenging material requirements that cannot be satisfied with crystalline products alone. Chalcogenide materials, with their unique physical, thermal, and optical properties, have found acceptance by designers and fabricators to meet these demands. No material is perfect in every regard, and chalcogenides are no exception. A cause for concern has been the relatively low fracture toughness and the propensity of the bulk material to fracture. This condition is amplified when traditional subtractive manufacturing processes are employed. This form of processing leaves behind micro fractures and sub surface damage, which act as propagation points for both local and catastrophic failure of the material. Precision lens molding is not a subtractive process, and as a result, micro fractures and sub surface damage are not created. This results in a stronger component than one produced by traditional methods. New processing methods have also been identified that result in an even stronger surface that is more resistant to breakage, without the need for post processing techniques that may compromise surface integrity. This paper will discuss results achieved in the process of lens molding development at Edmund Optics that result in measurably stronger chalcogenide components. Various metrics will be examined and data will be presented that quantifies component strength for different manufacturing processes.

  17. Infrared colloidal lead chalcogenide nanocrystals: synthesis, properties, and photovoltaic applications.

    PubMed

    Fu, Huiying; Tsang, Sai-Wing

    2012-04-01

    Simple solution phase, catalyst-free synthetic approaches that offer monodispersed, well passivated, and non-aggregated colloidal semiconductor nanocrystals have presented many research opportunities not only for fundamental science but also for technological applications. The ability to tune the electrical and optical properties of semiconductor nanocrystals by manipulating the size and shape of the crystals during the colloidal synthesis provides potential benefits to a variety of applications including photovoltaic devices, light-emitting diodes, field effect transistors, biological imaging/labeling, and more. Recent advances in the synthesis and characterization of colloidal lead chalcogenide nanocrystals and the achievements in colloidal PbS or PbSe nanocrystals solar cells have demonstrated the promising application of infrared-emitting colloidal lead chalcogenide nanocrystals in photovoltaic devices. Here, we review recent progress in the synthesis and optical properties of colloidal lead chalcogenide nanocrystals. We focus in particular upon the size- and shape-controlled synthesis of PbS, PbSe, and PbTe nanocrystals by using different precursors and various stabilizing surfactants for the growth of the colloidal nanocrystals. We also summarize recent advancements in the field of colloidal nanocrystals solar cells based on colloidal PbS and PbSe nanocrystals. PMID:22382898

  18. Nanoscale structure and atomic disorder in the iron-based chalcogenides

    NASA Astrophysics Data System (ADS)

    Lal Saini, Naurang

    2013-02-01

    The multiband iron-based superconductors have layered structure with a phase diagram characterized by a complex interplay of charge, spin and lattice excitations, with nanoscale atomic structure playing a key role in their fundamental electronic properties. In this paper, we briefly review nanoscale structure and atomic disorder in iron-based chalcogenide superconductors. We focus on the Fe(Se,S)1-xTex (11-type) and K0.8Fe1.6Se2 (122-type) systems, discussing their local structure obtained by extended x-ray absorption fine structure. Local structure studies on the Fe(Se,S)1-xTex system reveal clear nanoscale phase separation characterized by coexisting components of different atomic configurations, similar to the case of random alloys. In fact, the Fe-Se/S and Fe-Te distances in the ternary Fe(Se,S)1-xTex are found to be closer to the respective distances in the binary FeSe/FeS and FeTe systems, showing significant divergence of the local structure from the average one. The observed features are characteristic of ternary random alloys, indicating breaking of the local symmetry in these materials. On the other hand, K0.8Fe1.6Se2 is known for phase separation in an iron-vacancy ordered phase and an in-plane compressed lattice phase. The local structure of these 122-type chalcogenides shows that this system is characterized by a large local disorder. Indeed, the experiments suggest a nanoscale glassy phase in K0.8Fe1.6Se2, with the superconductivity being similar to the granular materials. While the 11-type structure has no spacer layer, the 122-type structure contains intercalated atoms unlike the 1111-type REFeAsO (RE = rare earth) oxypnictides, having well-defined REO spacer layers. It is clear that the interlayer atomic correlations in these iron-based superconducting structures play an important role in structural stability as well as superconductivity and magnetism.

  19. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

    NASA Astrophysics Data System (ADS)

    Congxin, Xia; Jingbo, Li

    2016-05-01

    Since two-dimensional (2D) graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalcogenides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some personal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

  20. Chemical synthesis and modification of target phases of chalcogenide nanomaterials

    NASA Astrophysics Data System (ADS)

    Sines, Ian T.

    Inorganic nanoparticles have been at the forefront of materials research in recent years due to their utility in modern technological processes. Chalcogenide nanomaterials are of particular interest because of their wide range of desirable properties for semiconductors, magnetic devices, and energy industries. Primary factors that dictate the properties of the material are the elemental composition, crystal structure, stoichiometry, crystallite size, and particle morphology. One of the most common approaches to synthesize these materials is through solution mediated routes. This approach offers unique advantages in controlling the morphology and particle size that other methods lack. This dissertation describes our recent work on exploiting solution chemical routes to control the crystal structure and composition of chalcogenide nanomaterials. We will start by discussing solution chemistry routes to synthesize non-equilibrium phases of chaclogenide nanomaterials. By using low-temperature bottom-up techniques it is possible to trap kinetically stable phases that cannot be accessed using traditional high-temperature techniques. We used solution chemistry to synthesize and characterize, for the first time, wurtzite-type MnSe. Wurtzite-type MnSe is the end-member of the highly investigated ZnxMn1-xSe solid solution, a classic magnetic semiconductor system. We will then discuss PbO-type FeS, another non-equilibrium phase that is isostructural with the superconducting phase of FeSe. We synthesized phase-pure PbO-type FeS using a low-temperature solvothermal route. We will then discuss the post-synthetic modification of chalcogenides nanomaterials. By exploiting the solubility of Se and S in tri-n-octylphosphine we can selectively extract the chalcogen from preformed chalcogenide nanomaterials. This gives chemists a technique for purification and phase-targeting of particular chalcogenide phases. This method can be modified to facilitate anion exchange. When Te is

  1. Electrical conductivity and thermo-emf in Quasi-binary systems formed by silver chalcogenides

    SciTech Connect

    Borkhanov, A.S.; Kureshov, V.A.

    1986-05-01

    This paper studies the semiconducting compounds Ag/sub 2/S, Ag/sub 2/Se, and Ag/sub 2/Te and the alloys derived from them at high temperature, including the liquid phase. The authors constructed isotherms at various temperatures for both the solid and liquid phases from the data on temperature dependence and thermal emf. The concentration dependences of the solid and liquid solutions arequite smooth; this confirms the continuous formation of solid and liquid solutions and the absence of more complicated associations in the temperature range studied.

  2. Vapor Growth of Binary and Ternary Chalcogenides in Preparation for Microgravity Experiments

    NASA Technical Reports Server (NTRS)

    Su, C.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    In the bulk crystal growth of some technologically important semiconducting chalcopyrites, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials. The realization of routine production of high-quality single crystals of these semiconductors requires a fundamental, systematic and in-depth study on the PVT growth process and crystal growth by vapor transport in low gravity offers a set of unique conditions for this study. Previously, two reasons have been put forward to account for this. The first is weight-related reductions in crystal strain and defects. These are thought to be caused by the weight of the crystals during processing at elevated temperatures and retained on cooling, particularly for materials with a low yield strength. The second, and more general, reason is related to the reduction in density-gradient driven convection. The PVT crystal growth process consists of essentially three processes: sublimation of the source material, transport of the vapor species and condensation of the vapor species to form the crystal. The latter two processes can be affected by the convection caused by gravitational accelerations on Earth. Reductions in such convection in low gravity is expected to yield a nearly diffusion-limited growth condition which results in more uniform growth rates (on the microscopic scale) and hence greater crystalline perfection and compositional homogeneity. The reduction of convective contamination by performing flight experiments in a reduced gravity environment will help to understand the relation between fluid phase processes (growth parameters) and defect and impurity incorporation in grown crystals.

  3. Exposed-core chalcogenide microstructured optical fibers for chemical sensing

    NASA Astrophysics Data System (ADS)

    Troles, Johann; Toupin, Perrine; Brilland, Laurent; Boussard-Plédel, Catherine; Bureau, Bruno; Cui, Shuo; Mechin, David; Adam, Jean-Luc

    2013-05-01

    Chemical bonds of most of the molecules vibrate at a frequency corresponding to the near or mid infrared field. It is thus of a great interest to develop sensitive and portable devices for the detection of specific chemicals and biomolecules for various applications in health, the environment, national security and so on. Optical fibers define practical sensing tools. Chalcogenide glasses are known for their transparency in the infrared optical range and their ability to be drawn as fibers. They are consequently good candidates to be used in biological/chemical sensing. For that matter, in the past decade, chalcogenide glass fibers have been successfully implemented in evanescent wave spectroscopy experiments, for the detection of bio-chemical species in various fields of applications including microbiology and medicine, water pollution and CO2 detection. Different types of fiber can be used: single index fibers or microstructured fibers. Besides, in recent years a new configuration of microstructured fibers has been developed: microstructured exposed-core fibers. This design consists of an optical fiber with a suspended micron-scale core that is partially exposed to the external environment. This configuration has been chosen to elaborate, using the molding method, a chalcogenide fiber for chemical species detection. The sensitivity of this fiber to detect molecules such as propan-2-ol and acetone has been compared with those of single index fibers. Although evanescent wave absorption is inversely proportional to the fiber diameter, the result shows that an exposed-core fiber is much more sensitive than a single index fiber having a twice smaller external diameter.

  4. Photosensitivity in chalcogenide glass thin films and its applications

    NASA Astrophysics Data System (ADS)

    Saliminia, Ali

    2002-08-01

    The realization and study of various photoinduced optical elements in As2S3 and As24S38Se38 chalcogenide glass (ChG) thin films constitute the main subject of the present thesis. Various isotropic and anisotropic photosensitive effects occur upon exposure of chalcogenide glass by a near bandgap light. In particular, photodarkening and giant photoexpansion effects have been studied in detail. The holographic fabrication and characterization of the scalar and vectorial volume and surface relief diffraction gratings using an interferometric technique have been presented, where the optimum writing conditions have been obtained so as to realize efficient and stable photoinduced gratings. One of the most important applications of photosensitivity is the fabrication of Bragg gratings in different guiding structures of ChG. The fabrication and characterization of Bragg filters at telecommunication wavelength of 1550 nm in single and multilayer slab/channel waveguides of ChG have been presented in detail. The observed thermal behavior of these Bragg gratings has provided a means for studying the photoinduced changes in optical properties of ChG, where some physical models have also been discussed. The realization of photoinduced Bragg gratings at 1550 nm in planar lightwave circuits (PLC) of chalcogenide glasses could provide many applications such as add-drop filters, and wavelength selective elements in integrated and photonic devices, especially in wavelength division multiplexing (WDM) networks. On the other hand, owing to the giant photoexpansion effect, one and two dimensional holographic microlens networks have been realized in ChG thin films. We also introduce a novel photoinduced anisotropic mass transport phenomenon, leading to extra-ordinary surface deformations and relief gratings in As2S3, with promising applications in grating couplers and photonics bandgap structures.

  5. Mode-locked fiber laser based on chalcogenide microwires.

    PubMed

    Al-Kadry, Alaa; El Amraoui, Mohammed; Messaddeq, Younès; Rochette, Martin

    2015-09-15

    We report the first mode-locked fiber laser using a chalcogenide microwire as the nonlinear medium. The laser is passively mode-locked with nonlinear polarization rotation and can be adjusted for the emission of solitons or noise-like pulses. The use of the microwire leads to a mode-locking threshold at the microwatt level and shortens the cavity length by 4 orders of magnitude with respect to other lasers of its kind. The controlled birefringence of the microwire, combined with a linear polarizer in the cavity, enables multiwavelength laser operation with tunable central wavelength, switchable wavelength separation, and a variable number of laser wavelengths. PMID:26371923

  6. Positronics of radiation-induced effects in chalcogenide glassy semiconductors

    SciTech Connect

    Shpotyuk, O.; Kozyukhin, S. A.; Shpotyuk, M.; Ingram, A.; Szatanik, R.

    2015-03-15

    Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

  7. Ultrafast laser fabrication of Bragg waveguides in chalcogenide glass.

    PubMed

    McMillen, Ben; Li, Mingshan; Huang, Sheng; Zhang, Botao; Chen, Kevin P

    2014-06-15

    Bragg waveguides are fundamental components in photonic integrated circuits and are particularly interesting for mid-IR applications in high index, highly nonlinear materials. In this work, we present Bragg waveguides fabricated in bulk chalcogenide glass using an ultrafast laser. Waveguides with near circularly symmetric cross sections and low propagation loss are obtained through spatial and temporal beam shaping. Using a single-pass technique, the waveguide and Bragg structure are formed at the same time. First through sixth order gratings with strengths of up to 25 dB are realized, and performance is evaluated based on the modulation duty cycle of the writing beam. PMID:24978541

  8. Supercontinuum generation in an ultrafast laser inscribed chalcogenide glass waveguide.

    PubMed

    Psaila, Nicholas D; Thomson, Robert R; Bookey, Henry T; Shen, Shaoxiong; Chiodo, Nicola; Osellame, Roberto; Cerullo, Giulio; Jha, Animesh; Kar, Ajoy K

    2007-11-26

    The authors report supercontinuum generation in an ultrafast laser inscribed chalcogenide glass waveguide. The waveguides were fabricated using a Yb:glass cavity-dumped femtosecond oscillator with 600- kHz repetition rate. The waveguides were pumped using an optical parametric amplifier tuned to 1500 nm with a bandwidth of 100 nm. The broadest resulting supercontinuum spanned 600 nm (at -15 dB points) from 1320 to 1920 nm. The supercontinuum was generated in the normal dispersion regime, enhancing stability, and exhibits a smooth spectral shape. PMID:19550862

  9. Photoelectric and electric properties of four-component copper chalcogenides

    SciTech Connect

    Saipulaeva, L. A. Gabibov, F. S.; Mel'nikova, N. V.; Alibekov, A. G.; Kheifets, O. L.; Babushkin, A. N.; Kurochka, K. V.

    2012-11-15

    The results of investigation of the electrophysical and photoelectric properties of complex copper chalcogenides are presented, namely, the properties of CuSnAsSe{sub 3}, which exhibits ferroelectric properties, and CuInAsS{sub 3}, which exhibits ionic conductivity. The spectral and temperature regions of photosensitivity of these crystals are determined. The depth of the level of carrier trapping centers, which manifest themselves under thermal activation, are evaluated from the analysis of thermally stimulated conductivity (TSC) curves in CuInAsS{sub 3}.

  10. Mechanical stiffening and thermal softening of rare earth chalcogenides

    SciTech Connect

    Shriya, S.; Varshney, Dinesh; Singh, Namita; Varshney, M.

    2014-04-24

    The pressure and temperature dependent elastic properties such as melting temperature nature in REX; (RE = La, Pr, Eu; X = O, S, Se, Te) chalcogenides is computed with emphasis on charge transfer interactions and covalent contribution in the effective interionic interaction potential. The pressure dependent elastic constants and melting temperature confirms that REX chalcogens lattice get stiffened as a consequence of bond compression and bond strengthening, however thermal softening arose due to bond expansion and bond weakening is evidenced from temperature dependence of melting temperature (T{sub M})

  11. Spectral diagnostics of laser erosion plasma of mercury chalcogenide targets

    NASA Astrophysics Data System (ADS)

    Kotlyarchuk, B. K.; Popovych, D. I.; Savchuk, V. K.; Savitsky, V. G.

    1995-11-01

    The article sets out to investigate spatial-time and spectral characteristics of laser erosive vapor-plasma torch (EVT), formed at the vaporization of mercury chalcogenines targets. Its influence on the synthesis processes of HgTe and CdHgTe layers, condensed in mercury vapor, is described. It is shown that the laser radiation flux density and Hg vapor pressure in the reaction chamber are dominating factors which determine the character of gas-dynamic spread and EVT composition of mercury chalcogenides targets.

  12. Optical Properties Of Tellurium-Based Chalcogenide And Chalcohalide Glasses

    NASA Astrophysics Data System (ADS)

    MacKinnon, Robin J.; Sigel, George H.

    1989-06-01

    Various tellurium containing chalcogenide glasses from the systems Ge-Se-Te, I-Se-Te and Ge-(As,I)-Se-Te were synthesized and infrared transmission spectra collected from them. The iodide containing glasses tended to have higher long wavelength absorption edges and lower oscillation strengths of the absorption bands produced by hydride impurities than glasses containing no iodine. It was further demonstrated that it is possible to fabricate chalcohalide glasses containing large amounts of germanium. The presence of halogen likely reduces or eliminates hydride contamination through removal as hydrogen halide gas but has no effect on oxide impurities.

  13. A new generation of alloyed/multimetal chalcogenide nanowires by chemical transformation

    PubMed Central

    Yang, Yuan; Wang, Kai; Liang, Hai-Wei; Liu, Guo-Qiang; Feng, Mei; Xu, Liang; Liu, Jian-Wei; Wang, Jin-Long; Yu, Shu-Hong

    2015-01-01

    One-dimensional metal chalcogenide nanostructures are important candidates for many technological applications such as photovoltaic and thermoelectric devices. However, the design and synthesis of one-dimensional metal chalcogenide nanostructured materials with controllable components and properties remain a challenge. We report a general chemical transformation process for the synthesis of more than 45 kinds of one-dimensional alloyed/hybrid metal chalcogenide nanostructures inherited from mother template TexSey@Se core-shell nanowires with tunable compositions. As many as nine types of monometal chalcogenide alloy nanowires (including AgSeTe, HgSeTe, CuSeTe, BiSeTe, PbSeTe, CdSeTe, SbSeTe, NiSeTe, and CoSeTe) can be synthesized. Alloyed and hybrid nanowires integrated with two or more alloyed metal chalcogenide phases can also be prepared. The compositions of all of these metal chalcogenide nanowires are tunable within a wide range. This protocol provides a new general route for the controllable synthesis of a new generation of one-dimensional metal chalcogenide nanostructures. PMID:26601137

  14. Lead-Chalcogenides Under Pressure: Ab-Initio Study

    NASA Astrophysics Data System (ADS)

    Gupta, Dinesh C.; Hamid, Idris

    ab-initio calculations using fully relativistic pseudo-potential have been performed to investigate the high pressure phase transition, elastic and electronic properties of lead-chalcogenides including the less known lead polonium. The calculated ground state parameters, for the rock-salt structure show good agreement with the experimental data. The enthalpy calculations show that these materials undergo a first-order phase transition from rock-salt to CsCl structure at 19.4, 15.5, 11.5 and 7.3 GPa for PbS, PbSe, PbTe and PbPo, respectively. Present calculations successfully predicted the location of the band gap at L-point of Brillouin zone as well as the value of the band gap in every case at ambient pressure. It is observed that unlike other lead-chalcogenides, PbPo is semi-metal at ambient pressure. The pressure variation of the energy gap indicates that these materials metalized under high pressures. For this purpose, the electronic structure of these materials has also been computed in parent as well as in high pressure phase.

  15. Correlation, magnetization and conduction in iron pnictides and iron chalcogenides

    NASA Astrophysics Data System (ADS)

    Yin, Zhiping; Haule, Kristjan; Kotliar, Gabriel

    2011-03-01

    By combining density functional theory (DFT) and dynamical mean field theory (DMFT), we study the electronic properties of iron pnictides and iron chalcogenides in both the paramagnetic and magnetic states. With ab initio derived realistic Coulomb interaction U and Hund's exchange coupling J, we find detailed agreements bewtween our calculations and many experimental observations in these compounds, including ARPES, magnetic properties, optical conductivity and anisotropy, and so on, WITHOUT any adjustment such as shifting of atomic positions, Fermi level and bands and renormalizations of bands which are commonly needed in DFT calculations in order to compare with experiments. Our theory explains the origin of the different magnetizations in FeTe and other iron pnictides and provides a unique physical picture. We find that in the magnetic phase of the iron pnictides, both the spin and the orbital polarization are strongly energy dependent. The spin polarization becomes weaker around Fermi level when the orbital polarization is stronger and vice verse at high energies. We stress on the role of the Hund's J rather than the Coulomb U and show how the iron pnictides and iron chalcogenides differ from other compounds.

  16. Fabrication of uniformly dispersed nanoparticle-doped chalcogenide glass

    SciTech Connect

    Lu, Chao; Arnold, Craig; Almeida, Juliana M. P.; Yao, Nan

    2014-12-29

    The dispersion of metallic nanoparticles within a chalcogenide glass matrix has the potential for many important applications in active and passive optical materials. However, the challenge of particle agglomeration, which can occur during traditional thin film processing, leads to materials with poor performance. Here, we report on the preparation of a uniformly dispersed Ag-nanoparticle (Ag NP)/chalcogenide glass heterogeneous material prepared through a combined laser- and solution-based process. Laser ablation of bulk silver is performed directly within an arsenic sulfide/propylamine solution resulting in the formation of Ag NPs in solution with an average particle size of less than 15 nm as determined by dynamic light scattering. The prepared solutions are fabricated into thin films using standard coating processes and are then analyzed using energy-dispersive X-ray spectroscopy and transmission electron microscopy to investigate the particle shape and size distribution. By calculating the nearest neighbor index and standard normal deviate of the nanoparticle locations inside the films, we verify that a uniformly dispersed distribution is achieved through this process.

  17. Electrical conduction in chalcogenide glasses of phase change memory

    NASA Astrophysics Data System (ADS)

    Nardone, M.; Simon, M.; Karpov, I. V.; Karpov, V. G.

    2012-10-01

    Amorphous chalcogenides have been extensively studied over the last half century due to their application in rewritable optical data storage and in non-volatile phase change memory devices. Yet, the nature of the observed non-ohmic conduction in these glasses is still under debate. In this review, we consolidate and expand the current state of knowledge related to dc conduction in these materials. An overview of the pertinent experimental data is followed by a review of the physics of localized states that are peculiar to chalcogenide glasses. We then describe and evaluate twelve relevant transport mechanisms with conductivities that depend exponentially on the electric field. The discussed mechanisms include various forms of Poole-Frenkel ionization, Schottky emission, hopping conduction, field-induced delocalization of tail states, space-charge-limited current, field emission, percolation band conduction, and transport through crystalline inclusions. Most of the candidates provide more or less satisfactory fits of the observed non-linear IV data. Our analysis calls upon additional studies that would enable one to discriminate between the various alternative models.

  18. Ab-intitio studies of electronic properties of chalcogenide spinels.

    NASA Astrophysics Data System (ADS)

    Chshiev, Mairbek; Wang, Y.-H. A.; Gupta, Arunava; Bettinger, Joanna; Suzuki, Yuri; Butler, William H.

    2007-03-01

    CuCr2Se4 is a normal chalcogenide spinel which exhibits ferromagnetic properties including a relatively high Curie temperature of 450 K [1] which makes it a promising candidate for use in spintronics devices. Another chalcogenide spinel of enhanced interest for spintronics is CdCr2Se4 which seems to be a promising ferromagnetic semiconductor for electrical spin injection into III-V device heterostructures [2]. We report first principles calculations of the electronic structure of substoichiometric CuCr2Se4-x and CuxCd1-xCrSe4 spinels. The calculations were performed using the Vienna ab-initio simulation program (VASP) within the Generalized Gradient Approximation (GGA) of Density Functional Theory (DFT). Our calculations indicate that both Se deficient CuCr2Se4-x as well as CuxCd1-xCrSe4 show half-metallic behavior over a wide range of x with a gap around the Fermi level in the minority density of states. [1] F.K. Lotgering, Solid State Commun. 2 (1964) 55 [2] G. Kioseoglou et al., Nature Materials 3 (2004) 799

  19. Dynamic Control of Optical Response in Layered Metal Chalcogenide Nanoplates.

    PubMed

    Liu, Yanping; Tom, Kyle; Wang, Xi; Huang, Chunming; Yuan, Hongtao; Ding, Hong; Ko, Changhyun; Suh, Joonki; Pan, Lawrence; Persson, Kristin A; Yao, Jie

    2016-01-13

    Tunable optical transitions in ultrathin layered 2-dimensional (2D) materials unveil the electronic structures of materials and provide exciting prospects for potential applications in optics and photonics. Here, we present our realization of dynamic optical modulation of layered metal chalcogenide nanoplates using ionic liquid (IL) gating over a wide spectral range. The IL gating significantly increased the tuning range of the Fermi level and, as a result, substantially altered the optical transitions in the nanoplates. Using heavily n-doped Bi2Se3 nanoplates, we substantially modulated the light transmission through the ultrathin layer. A tunable, high-transmission spectral window in the visible to near-infrared region has been observed due to simultaneous shifts of both the plasma edge and absorption edge of the material. On the other hand, optical response of multilayer MoSe2 flakes gated by IL has shown enhanced transmission in both positive and negative biases, which is consistent with their ambipolar electrical behavior. The electrically controlled optical property tuning in metal chalcogenide material systems provides new opportunities for potential applications, such as wide spectral range optical modulators, optical filters, and electrically controlled smart windows with extremely low material consumption. PMID:26599063

  20. Exciton pumping across type-I gallium chalcogenide heterojunctions

    NASA Astrophysics Data System (ADS)

    Cai, Hui; Kang, Jun; Sahin, Hasan; Chen, Bin; Suslu, Aslihan; Wu, Kedi; Peeters, Francois; Meng, Xiuqing; Tongay, Sefaattin

    2016-02-01

    Quasi-two-dimensional gallium chalcogenide heterostructures are created by transferring exfoliated few-layer GaSe onto bulk GaTe sheets. Luminescence spectroscopy measurements reveal that the light emission from underlying GaTe layers drastically increases on heterojunction regions where GaSe layers make contact with the GaTe. Density functional theory (DFT) and band offset calculations show that conduction band minimum (CBM) (valance band maximum (VBM)) values of GaSe are higher (lower) in energy compared to GaTe, forming type-I band alignment at the interface. Consequently, GaSe layers provide photo-excited electrons and holes to GaTe sheets through relatively large built-in potential at the interface, increasing overall exciton population and light emission from GaTe. Observed results are not specific to the GaSe/GaTe system but observed on GaS/GaSe heterolayers with type-I band alignment. Observed experimental findings and theoretical studies provide unique insights into interface effects across dissimilar gallium chalcogenides and offer new ways to boost optical performance by simple epitaxial coating.

  1. Compositional-tailoring of optical properties in IR transparent chalcogenide glasses for precision glass molding

    NASA Astrophysics Data System (ADS)

    Gleason, B.; Wachtel, P.; Musgraves, J. D.; Qiao, A.; Anheier, N.; Richardson, K.

    2013-09-01

    The structural and optical properties of AsSe chalcogenide glass, starting with As40Se60, were studied as a function of Ge or Se additions. These elements provide broad glass forming options when combined with the host matrix to allow for compositional tuning of properties. Optimization of glass composition has been shown to produce bulk glasses with a thermoptic coefficient (dn/dT) equal to zero, as well as a composition which could demonstrate a net zero change in index after precision glass molding (PGM). The bulk glass density, coefficient of thermal expansion (CTE), refractive index, and dn/dT were measured for all bulk compositions, as was the refractive index after PGM. For the bulk glasses examined, both the refractive index (measured at discrete laser wavelengths from 3.4 to10.6 μm) and dn/dT were observed to decrease as the molecular percentage of either Ge or Se is increased. Compared to the starting glass' network, additions of either Ge or Se lead to a deviation from the "optimally constrained" binary glass' average coordination number = 2.4. Additions of Se or Ge serve to decrease or increase the average coordination number (CN) of the glass, respectively, while also changing the network's polarizability. After a representative PGM process, glasses exhibited an "index drop" consistent with that seen for oxide glasses.1 Based on our evaluation, both the Gecontaining and Ge-free tielines show potential for developing unique compositions with either a zero dn/dT for the unmolded, bulk glass, as well as the potential for a glass that demonstrates a net zero "index drop" after molding. Such correlation of glass chemistry, network, physical and optical properties will enable the tailoring of novel compositions suitable for prototyping towards targeted molding behavior and final properties.

  2. Midinfrared supercontinuum generation via As2Se3 chalcogenide photonic crystal fibers.

    PubMed

    Saghaei, Hamed; Ebnali-Heidari, Majid; Moravvej-Farshi, Mohammad Kazem

    2015-03-10

    Using numerical analysis, we compare the results of optofluidic and rod filling techniques for the broadening of supercontinuum spectra generated by As2Se3 chalcogenide photonic crystal fibers (PCFs). The numerical results show that when air-holes constituting the innermost ring in a PCF made of As2Se3-based chalcogenide glass are filled with rods of As2Se3-based chalcogenide glass, over a wide range of mid-IR wavelengths, an ultra-flattened near-zero dispersion can be obtained, while the total loss is negligible and the PCF nonlinearity is very high. The simulations also show that when a 50 fs input optical pulse of 10 kW peak power and center wavelength of 4.6 μm is launched into a 50 mm long rod-filled chalcogenide PCF, a ripple-free spectral broadening as wide as 3.86 μm can be obtained. PMID:25968385

  3. Highly nonlinear chalcogenide glass micro/nanofiber devices: Design, theory, and octave-spanning spectral generation

    NASA Astrophysics Data System (ADS)

    Hudson, Darren D.; Mägi, Eric C.; Judge, Alexander C.; Dekker, Stephen A.; Eggleton, Benjamin J.

    2012-10-01

    In this review we consider the basic elements of tapering chalcogenide optical fibers for the generation of extreme spectral broadening through supercontinuum generation. Creating tapered nanofiber devices in chalcogenide fiber, which has an intrinsic nonlinearity that is two orders of magnitude higher than silica, has resulted in the demonstration of octave-spanning spectra using record low power. We first present a brief theoretical understanding of the tapering process that follows from the basic principle of mass conservation, and a geometric construction tool for the visualization of the shape of tapered fibers. This is followed by a theoretical treatment of dispersion engineering and supercontinuum generation in a chalcogenide nanofiber. In the final section, we cover the experimental implementation of the chalcogenide nanofiber and demonstrate an octave-spanning spectrum created with 150 W of peak power.

  4. Method of producing stable metal oxides and chalcogenides and power source

    DOEpatents

    Doddapaneni, N.; Ingersoll, D.

    1996-10-22

    A method is described for making chemically and electrochemically stable oxides or other chalcogenides for use as cathodes for power source applications, and of making batteries comprising such materials. 6 figs.

  5. Chalcogenide fiber for mid-infrared transmission and generation of laser source

    NASA Astrophysics Data System (ADS)

    Chenard, Francois; Kuis, Robinson A.

    2010-04-01

    Chalcogenide glass fibers are the best candidates for mid-infrared transmission. Their low optical losses and high-power damage threshold are enabling numerous applications: laser power delivery, chemical sensing and imaging. Furthermore, chalcogenide glass fibers are best candidates for demonstrating rare-earth doped fiber lasers and supercontinuum sources in the mid-infrared. The latest results towards the creation of a 4.5 micron fiber laser and a broadband (2-5 micron) supercontinuum source are presented.

  6. Chalcogenide phase-change thin films used as grayscale photolithography materials.

    PubMed

    Wang, Rui; Wei, Jingsong; Fan, Yongtao

    2014-03-10

    Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks. PMID:24663836

  7. Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing

    SciTech Connect

    Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

    2013-04-30

    For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, which provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waal's forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have

  8. Copper Antimony Chalcogenide Thin Film PV Device Development

    SciTech Connect

    Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

    2015-06-14

    Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

  9. High-temperature superconductivity in iron pnictides and chalcogenides

    NASA Astrophysics Data System (ADS)

    Si, Qimiao; Yu, Rong; Abrahams, Elihu

    2016-04-01

    Superconductivity develops in metals upon the formation of a coherent macroscopic quantum state of electron pairs. Iron pnictides and chalcogenides are materials that have high superconducting transition temperatures. In this Review, we describe the advances in the field that have led to higher superconducting transition temperatures in iron-based superconductors and the wide range of materials that are used to form these superconductors. We summarize the essential aspects of the normal state and the mechanism for superconductivity. We emphasize the degree of electron–electron correlations and their manifestation in properties of the normal state. We examine the nature of magnetism, analyse its role in driving the electronic nematicity and discuss quantum criticality at the border of magnetism in the phase diagram. Finally, we review the amplitude and structure of the superconducting pairing, and survey the potential material settings for optimizing superconductivity.

  10. Longitudinal Magnetoresistance and “Chiral" Coupling in Silver Chalcogenides

    NASA Astrophysics Data System (ADS)

    Xu, Jie; Zhang, Duan-Ming

    2011-03-01

    A complex longitudinal magnetoresistance (MR//) effect in the non-stoichiometric silver chalcogenides (include the silver selenide and telluride) has been found, however the mechanism for the MR// effect is not clear now. In this work, a new random resistor network for MR// effect is proposed based on the experimental observation. The network is constructed from six-terminal resistor units and the mobility of carries within the network has a Gaussian distribution. Considering the non-zero transverse-longitudinal coupling in materials, the resistance matrix of the six-terminal resistor unit is modified. It is found that the material has the “chiral" transverse-longitudinal couplings, which is suggested a main reason for the complex MR// effect. The model predictions are compared with the experimental results. A three dimension (3D) visualization of current flow within the network demonstrates the “current jets" phenomenon in the thickness of materials clearly.

  11. Electron-beam recording of patterns in chalcogenide films

    NASA Astrophysics Data System (ADS)

    Sergeev, S. A.; Iovu, M. S.; Iaseniuc, O. V.

    2015-02-01

    Thin films of chalcogenide glasses (ChG) of different composition have been used for e-beam recording of diffraction grating structures. The dependencies of diffraction efficiency of gratings on radiation dose were studied. The influence of ChG film composition on diffraction properties of gratings was shown. It was established that the refractive index gratings formed in As2S3 films exhibit high stability during their dark storage. The diffraction efficiency enhancement caused by uniform light irradiation was observed for gratings recorded in As4S3Se3 thin films, doped with Sn. With use of computer-controlled positioning of electron beam both the raster scan and vector patterns were recorded in As2S3 films. In the former case the images from BMP-files were patterned. In the latter case the mosaic of diffraction gratings, producing the multi-beam light diffraction was recorded.

  12. Self-Structured Conductive Filament Nanoheater for Chalcogenide Phase Transition.

    PubMed

    You, Byoung Kuk; Byun, Myunghwan; Kim, Seungjun; Lee, Keon Jae

    2015-06-23

    Ge2Sb2Te5-based phase-change memories (PCMs), which undergo fast and reversible switching between amorphous and crystalline structural transformation, are being utilized for nonvolatile data storage. However, a critical obstacle is the high programming current of the PCM cell, resulting from the limited pattern size of the optical lithography-based heater. Here, we suggest a facile and scalable strategy of utilizing self-structured conductive filament (CF) nanoheaters for Joule heating of chalcogenide materials. This CF nanoheater can replace the lithographical-patterned conventional resistor-type heater. The sub-10 nm contact area between the CF and the phase-change material achieves significant reduction of the reset current. In particular, the PCM cell with a single Ni filament nanoheater can be operated at an ultralow writing current of 20 μA. Finally, phase-transition behaviors through filament-type nanoheaters were directly observed by using transmission electron microscopy. PMID:26039415

  13. Magnetism in Parent Iron Chalcogenides: Quantum Fluctuations Select Plaquette Order

    NASA Astrophysics Data System (ADS)

    Ducatman, Samuel; Perkins, Natalia B.; Chubukov, Andrey

    2012-10-01

    We analyze magnetic order in Fe chalcogenide Fe1+yTe, the parent compound of the high-temperature superconductor Fe1+yTe1-xSex. Experiments show that magnetic order in this material contains components with momentum Q1=(π/2,π/2) and Q2=(π/2,-π/2) in the Fe only Brillouin zone. The actual spin order depends on the interplay between these two components. Previous works assumed that the ordered state has a single Q (either Q1 or Q2). In such a state, spins form double stripes along one of the diagonals breaking the rotational C4 symmetry. We show that quantum fluctuations actually select another order—a double Q plaquette state with equal weight of Q1 and Q2 components, which preserves C4 symmetry. We argue that the order in Fe1+yTe is determined by the competition between quantum fluctuations and magnetoelastic coupling.

  14. Precision compression molding of chalcogenide glass optical elements

    NASA Astrophysics Data System (ADS)

    Qi, Chaowei; Ma, Tao; Chen, Fan

    2013-12-01

    Precision glass molding process (GMP) is a promising process to manufacture small precision optical elements in large volume. In this paper, we report on the fabrication of a molded chalcogenide glass lens as an optical element. A set of mold was designed and manufactured with silicon carbide material for the molding test. The structure of the mold set was semi-closed and detachable which can make the molded lens easy releasing with non-invasion. The surfaces of the mold cores are coated with thin protecting DLC film to relieve adhesion problem and increase the working life. Experiments were also performed using a precision glass molding machine Toshiba GMP-311V to determine the molding parameters i.e. molding temperature, pressure and cooling rate. The glass lens breakage during precision molding process was analyzed according to the glass property and the molding parameters. By modifying the mold design and optimization the processing parameters, ultimately achieve the desired molded lens.

  15. Chalcogenide optical fibers for mid-infrared sensing

    NASA Astrophysics Data System (ADS)

    Bureau, Bruno; Boussard, Catherine; Cui, Shuo; Chahal, Radwan; Anne, Marie Laure; Nazabal, Virginie; Sire, Olivier; Loréal, Olivier; Lucas, Pierre; Monbet, Valérie; Doualan, Jean-Louis; Camy, Patrice; Tariel, Hugues; Charpentier, Frédéric; Quetel, Lionel; Adam, Jean-Luc; Lucas, Jacques

    2014-02-01

    Chalcogenide glasses are a matchless material as far as mid-infrared (IR) applications are concerned. They transmit light typically from 2 to 12 μm and even as far as 20 μm depending on their composition, and numerous glass compositions can be designed for optical fibers. One of the most promising applications of these fibers consists in implementing fiber evanescent wave spectroscopy, which enables detection of the mid-IR signature of most biomolecules. The principles of fiber evanescent wave spectroscopy are recalled together with the benefit of using selenide glass to carry out this spectroscopy. Then, two large-scale studies in recent years in medicine and food safety are exposed. To conclude, the future strategy is presented. It focuses on the development of rare earth-doped fibers used as mid-IR sources on one hand and tellurium-based glasses to shift the limit of detection toward longer wavelength on the other hand.

  16. Electron correlation tuned superconductivity in iron chalcogenide superconductors

    NASA Astrophysics Data System (ADS)

    Yi, Ming; Wang, Meng; Lu, Donghui; Kemper, Alexander; Mo, Sung-Kwan; Shen, Zhi-Xun; Birgeneau, Robert

    2015-03-01

    The iron chalcogenide superconductors, AxFe2-ySe2 (A =K, Rb, Cs), is an interesting system where superconductivity occurs without the existence of hole Fermi pockets, hence lacking the nesting conditions needed under a spin fluctuation mediated pairing scenario. It is then important to understand the ingredients needed for superconductivity in these materials. It has been shown that sulfur substitution for selenium in this system can continually reduce the TC from 30K to zero, providing an opportunity for understanding the occurrence of superconductivity in these materials. In this talk, I will present angle-resolved photoemission spectroscopy data on the RbxFe2(Se1-ySy)2 series, where we show that electron correlation strength is the crucial parameter that tunes superconductivity in this family.

  17. Precision lens molding of asphero diffractive surfaces in chalcogenide materials

    NASA Astrophysics Data System (ADS)

    Nelson, J.; Scordato, M.; Schwertz, K.; Bagwell, J.

    2015-10-01

    Finished lens molding, and the similar process of precision lens molding, have long been practiced for high volume, accurate replication of optical surfaces on oxide glass. The physics surrounding these processes are well understood, and the processes are capable of producing high quality optics with great fidelity. However, several limitations exist due to properties inherent with oxide glasses. Tooling materials that can withstand the severe environmental conditions of oxide glass molding cannot easily be machined to produce complex geometries such as diffractive surfaces, lens arrays, and off axis features. Current machining technologies coupled with a limited selection of tool materials greatly limits the type of structures that can be molded into the finished optic. Tooling for chalcogenide glasses are not bound by these restrictions since the molding temperatures required are much lower than for oxide glasses. Innovations in tooling materials and manufacturing techniques have enabled the production of complex geometries to optical quality specifications and have demonstrated the viability of creating tools for molding diffractive surfaces, off axis features, datums, and arrays. Applications for optics having these features are found in automotive, defense, security, medical, and industrial domains. This paper will discuss results achieved in the study of various molding techniques for the formation of positive diffractive features on a concave spherical surface molded from As2Se3 chalcogenide glass. Examples and results of molding with tools having CTE match with the glass and non CTE match will be reviewed. The formation of stress within the glass during molding will be discussed, and methods of stress management will also be demonstrated and discussed. Results of process development methods and production of good diffractive surfaces will be shown.

  18. Raman and CT scan mapping of chalcogenide glass diffusion generated gradient index profiles

    NASA Astrophysics Data System (ADS)

    Lindberg, G. P.; Berg, R. H.; Deegan, J.; Benson, R.; Salvaggio, P. S.; Gross, N.; Weinstein, B. A.; Gibson, D.; Bayya, S.; Sanghera, J.; Nguyen, V.; Kotov, M.

    2016-05-01

    Metrology of a gradient index (GRIN) material is non-trivial, especially in the realm of infrared and large refractive index. Traditional methods rely on index matching fluids which are not available for indexes as high as those found in the chalcogenide glasses (2.4-3.2). By diffusing chalcogenide glasses of similar composition one can blend the properties in a continuous way. In an effort to measure this we will present data from both x-ray computed tomography scans (CT scans) and Raman mapping scans of the diffusion profiles. Proof of concept measurements on undiffused bonded sheets of chalcogenide glasses were presented previously. The profiles measured will be of axially stacked sheets of chalcogenide glasses diffused to create a linear GRIN profile and nested tubes of chalcogenide glasses diffused to create a radial parabolic GRIN profile. We will show that the x-ray absorption in the CT scan and the intensity of select Raman peaks spatially measured through the material are indicators of the concentration of the diffusion ions and correlate to the spatial change in refractive index. We will also present finite element modeling (FEM) results and compare them to post precision glass molded (PGM) elements that have undergone CT and Raman mapping.

  19. Chalcogenide based materials and devices for flexible electronics applications

    NASA Astrophysics Data System (ADS)

    Salas-Villasenor, Ana Lizeth

    The scaling of large-area electronics for applications in flat-panel displays, digital X-ray images, and flexible electronics is pushing the technological and cost limits of conventional materials and device processing. Chemical bath deposited chalcogenide films are attractive for thin film transistors (TFTs) for large area electronics given its simple fabrication, low temperature and compatibility with most substrates. In this dissertation, we describe the development of a high performance chalcogenide based TFTs using chemical bath deposition (CBD) methods. Cadmium sulfide (CdS) and lead sulfide (PbS) are used as the TFT channel layer. The influence of several CBD parameters is studied. CBD pH and CdS film thickness have a profound influence on the TFT electrical characteristics. These parameters impact film cluster size and impurity concentration. With the optimized CdS deposition conditions TFTs with excellent electrical properties are demonstrated. With a novel photolithography approach demonstrated here, TFTs with mobilities as high as 18 cm2 /V s, Ion/Ioff of 109 and V T shift of less than 0.1 eV were fabricated. To achieve these TFTs characteristics, a variety of contact materials, gate dielectrics, annealing conditions and device structures were studied. The factors affecting VT instability for CdS based TFTs are also presented and correlated to electrode materials, gate dielectrics, and post-annealing. In summary, TFT instability is correlated to traps and impurities at the dielectric/semiconductor and/or in the semiconductor film. In addition, this dissertation demonstrates CdS TFTs integration in hybrid complementary metal-oxide-semiconductor (CMOS) circuits. In particular, logic gates and ferroelectric random access (FRAM) memory cells are demonstrated. Finally, CdS based TFTs on flexible and transparent substrates with excellent stability and mobility of 10-18 cm2/V-s, threshold voltage of 1.6-4.8 V, and Ion/Ioff ratios of 107 are demonstrated. This

  20. Search for Binary Trojans

    NASA Astrophysics Data System (ADS)

    Noll, Keith S.; Grundy, W. M.; Ryan, E. L.; Benecchi, S. D.

    2015-11-01

    We have reexamined 41 Trojan asteroids observed with the Hubble Space Telescope (HST) to search for unresolved binaries. We have identified one candidate binary with a separation of 53 milliarcsec, about the width of the diffraction limited point-spread function (PSF). Sub-resolution-element detection of binaries is possible with HST because of the high signal-to-noise ratio of the observations and the stability of the PSF. Identification and confirmation of binary Trojans is important because a Trojan Tour is one of five possible New Frontiers missions. A binary could constitute a potentially high value target because of the opportunity to study two objects and to test models of the primordial nature of binaries. The potential to derive mass-based physical information from the binary orbit could yield more clues to the origin of Trojans.

  1. General synthetic approach to heterostructured nanocrystals based on noble metals and I-VI, II-VI, and I-III-VI metal chalcogenides.

    PubMed

    Liu, Minghui; Zeng, Hua Chun

    2014-08-19

    Solid metal precursors (alloys or monometals) can serve both as a starting template and as a source material for chemical transformation to metal chalcogenides. Herein, we develop a simple solution-based strategy to obtain highly monodisperse noble-metal-based heterostructured nanocrystals from such precursor seeds. By utilizing chemical and structural inhomogeneity of these metal seeds, in this work, we have synthesized a total of five I-VI (Ag2S, Ag2Se, Ag3AuS2, Ag3AuSe2, and Cu9S5), three II-VI (CdS, CdSe, and CuSe), and four I-III-VI (AgInS2, AgInSe2, CuInS2, and CuInSe2) chalcogenides, together with their fifteen associated heterodimers (Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, Au-Ag3AuSe2, Au-AgInS2, Au-AgInSe2, Au-CdS, Au-CdSe, Ag-Ag2S, Ag-AgInS2, Au-Cu9S5, Au-CuInS2, Au-CuSe, Au-CuInSe2, and Pt-AgInS2) to affirm the process generality. Briefly, by adding elemental sulfur or selenium to AuAg alloy seeds and tuning the reaction conditions, we can readily obtain phase-pure Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, and Au-Ag3AuSe2 heterostructures. Similarly, we can also fabricate Au-AgInS2 and Au-AgInSe2 heterostructures from the AuAg seeds by adding sulfur/selenium and indium precursors. Furthermore, by partial or full conversion of Ag seeds, we can prepare both single-phase Ag chalcogenide nanocrystals and Ag-based heterostructures. To demonstrate wide applicability of this strategy, we have also synthesized Au-based binary and ternary Cu chalcogenide (Au-Cu9S5, Au-CuSe, Au-CuInS2, and Au-CuInSe2) heterostructures from alloy seeds of AuCu and Pt chalcogenides (e.g., Pt-AgInS2) from alloy seeds of PtAg. The structure and composition of the above products have been confirmed with X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and energy-dispersive X-ray spectroscopy methods. A kinetic investigation of the formation mechanism of these heterostructures is brought forward using Au-AgInS2 and Ag-CuInS2 as model examples. PMID

  2. Band gap anomaly and topological properties in lead chalcogenides

    NASA Astrophysics Data System (ADS)

    Simin, Nie; Xiao, Yan Xu; Gang, Xu; Zhong, Fang

    2016-03-01

    Band gap anomaly is a well-known issue in lead chalcogenides PbX (X = S, Se, Te, Po). Combining ab initio calculations and tight-binding (TB) method, we have studied the band evolution in PbX, and found that the band gap anomaly in PbTe is mainly related to the high on-site energy of Te 5s orbital and the large s-p hopping originated from the irregular extended distribution of Te 5s electrons. Furthermore, our calculations show that PbPo is an indirect band gap (6.5 meV) semiconductor with band inversion at L point, which clearly indicates that PbPo is a topological crystalline insulator (TCI). The calculated mirror Chern number and surface states double confirm this conclusion. Project supported by the National Natural Science Foundation of China (Grant No. 11204359), the National Basic Research Program of China (Grant No. 2013CB921700), and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB07020100).

  3. Nanoscale Andreev Reflection Spectroscopy on Bismuth-Chalcogenide Topological Insulators

    NASA Astrophysics Data System (ADS)

    Granstrom, C. R.; Fridman, I.; Liang, R. X.; Lei, H.; Petrovic, C.; Yang, Shuo; Wu, K. H.; Wei, J. Y. T.

    Andreev reflection (AR) is the basic mechanism underlying the superconducting proximity effect which, at the interface between a topological insulator (TI) and a spin-singlet superconductor, can induce chiral p-wave pairing in the TI. Despite this novel importance, it is not well understood how AR is affected by the unique attributes of a three-dimensional TI, namely the Dirac dispersion and helical spin-polarization of its surface states. In this work, we use both s-wave and d-wave superconducting tips to perform AR spectroscopy at 4.2 K on flux-grown Bi2Se3 and Bi2Te3 single crystals, as well as epitaxial Bi2Se3 thin films grown on SrTiO3 substrates by molecular beam epitaxy. These AR measurements are complemented by scanning tunneling spectroscopy, in order to characterize the superconducting tip as well as the doping level and surface condition of the TI sample. Our data are analyzed using BTK theory, in light of the characteristic band structure of bismuth chalcogenides, to elucidate how the band structure affects the AR process. Work supported by: NSERC, CFI-OIT, the Canadian Institute for Advanced Research, and the Department of Energy.

  4. Alloyed Copper Chalcogenide Nanoplatelets via Partial Cation Exchange Reactions

    PubMed Central

    2014-01-01

    We report the synthesis of alloyed quaternary and quinary nanocrystals based on copper chalcogenides, namely, copper zinc selenide–sulfide (CZSeS), copper tin selenide–sulfide (CTSeS), and copper zinc tin selenide–sulfide (CZTSeS) nanoplatelets (NPLs) (∼20 nm wide) with tunable chemical composition. Our synthesis scheme consisted of two facile steps: i.e., the preparation of copper selenide–sulfide (Cu2–xSeyS1–y) platelet shaped nanocrystals via the colloidal route, followed by an in situ cation exchange reaction. During the latter step, the cation exchange proceeded through a partial replacement of copper ions by zinc or/and tin cations, yielding homogeneously alloyed nanocrystals with platelet shape. Overall, the chemical composition of the alloyed nanocrystals can easily be controlled by the amount of precursors that contain cations of interest (e.g., Zn, Sn) to be incorporated/alloyed. We have also optimized the reaction conditions that allow a complete preservation of the size, morphology, and crystal structure as that of the starting Cu2–xSeyS1–y NPLs. The alloyed NPLs were characterized by optical spectroscopy (UV–vis–NIR) and cyclic voltammetry (CV), which demonstrated tunability of their light absorption characteristics as well as their electrochemical band gaps. PMID:25050455

  5. Fabrication and characterization of chalcogenide glass for hollow Bragg fibers

    SciTech Connect

    Bowden, Bradley F.; Harrington, James A.

    2009-06-01

    Low- and high-refractive-index chalcogenide glasses are studied for their potential use in the fabrication of one-dimensional hollow Bragg fibers. The low-index glasses are based on the GeSe-glass systems with indices varying from 2.0 to 2.5, while the high-index glasses are formed from the AgAsSe glasses with indices ranging from 2.8 to 3.8. High-purity elemental starting materials are distilled and the surface oxides removed prior to mixing in a rocking furnace. The refractive indices of the AgAsSe glasses, measured using a CO2 laser reflectometer, were near 3.10 for the compositions most compatible with the low-index Ge20Se80 glass (n=2.46). Spectral measurements show impurity absorption bands between 12 and 16 {mu}m. The loss at 10.6 {mu}m for the Ag25As40Se35 glass measured using CO2 laser calorimetry was 1.16x10{sup -3} cm{sup -1}.

  6. Lithium containing chalcogenide single crystals for neutron detection

    NASA Astrophysics Data System (ADS)

    Tupitsyn, E.; Bhattacharya, P.; Rowe, E.; Matei, L.; Cui, Y.; Buliga, V.; Groza, M.; Wiggins, B.; Burger, A.; Stowe, A.

    2014-05-01

    Lithium containing semiconductor-grade chalcogenide single crystals were grown using the vertical Bridgman method. The source material was synthesized from elementary precursors in two steps, (i) preparing the metal alloy LiIn or LiGa, and (ii) reaction with chalcogen - Se or Te. In a number of experiments, enriched 6Li isotope was used for synthesis and growth. The composition and structure of the synthesized materials was verified using powder X-Ray diffraction. The energy band gaps of the crystals were determined using optical absorption measurements. The resistivity of LiInSe2 and LiGaSe2, obtained using current-voltage measurements is on the order of 108-1011 Ω cm. Photoconductivity measurement of a yellow LiInSe2 sample showed a peak in the photocurrent around 445 nm. Nuclear radiation detectors were fabricated from single crystal wafers and the responses to alpha particles, neutrons and gammas were measured and presented. It suggests that this material is a promising candidate for neutron detection applications.

  7. Photo-induced changes in a hybrid amorphous chalcogenide/silica photonic crystal fiber

    SciTech Connect

    Markos, Christos

    2014-01-06

    Photostructural changes in a hybrid photonic crystal fiber with chalcogenide nanofilms inside the inner surface of the cladding holes are experimentally demonstrated. The deposition of the amorphous chalcogenide glass films inside the silica capillaries of the fiber was made by infiltrating the nanocolloidal solution-based As{sub 25}S{sub 75}, while the photoinduced changes were performed by side illuminating the fiber near the bandgap edge of the formed glass nanofilms. The photoinduced effect of the chalcogenide glass directly red-shifts the transmission bandgap position of the fiber as high as ∼20.6 nm at around 1600 nm wavelength, while the maximum bandgap intensity change at ∼1270 nm was −3 dB.

  8. Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials.

    PubMed

    Makino, Kotaro; Tominaga, Junji; Hase, Muneaki

    2011-01-17

    A class of chalcogenide alloy materials that shows significant changes in optical properties upon an amorphous-to-crystalline phase transition has lead to development of large data capacities in modern optical data storage. Among chalcogenide phase-change materials, Ge2Sb2Te5 (GST) is most widely used because of its reliability. We use a pair of femtosecond light pulses to demonstrate the ultrafast optical manipulation of atomic arrangements from tetrahedral (amorphous) to octahedral (crystalline) Ge-coordination in GST superlattices. Depending on the parameters of the second pump-pulse, ultrafast nonthermal phase-change occurred within only few-cycles (≈1 picosecond) of the coherent motion corresponding to a GeTe4 local vibration. Using the ultrafast switch in chalcogenide alloy memory could lead to a major paradigm shift in memory devices beyond the current generation of silicon-based flash-memory. PMID:21263667

  9. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    NASA Astrophysics Data System (ADS)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

    2015-03-01

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  10. Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit.

    PubMed

    Yuan, Hongtao; Liu, Zhongkai; Xu, Gang; Zhou, Bo; Wu, Sanfeng; Dumcenco, Dumitru; Yan, Kai; Zhang, Yi; Mo, Sung-Kwan; Dudin, Pavel; Kandyba, Victor; Yablonskikh, Mikhail; Barinov, Alexei; Shen, Zhixun; Zhang, Shoucheng; Huang, Yingsheng; Xu, Xiaodong; Hussain, Zahid; Hwang, Harold Y; Cui, Yi; Chen, Yulin

    2016-08-10

    Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications. PMID:27357620

  11. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    SciTech Connect

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  12. Chalcogenide coatings of Ge15Sb20S65 and Te20As30Se50.

    PubMed

    Nazabal, Virginie; Cathelinaud, Michel; Shen, Weidong; Nemec, Petr; Charpentier, Frédéric; Lhermite, Hervé; Anne, Marie-Laure; Capoulade, Jérémie; Grasset, Fabien; Moreac, Alain; Inoue, Satoru; Frumar, Miloslav; Adam, Jean-Luc; Lequime, Michel; Amra, Claude

    2008-05-01

    Chalcogenide coatings are investigated to obtain either optical components for spectral applications or optochemical sensors in the mid-infrared. The deposition of Ge(15)Sb(20)S(65) and Te(20)As(30)Se(50) chalcogenide glasses is performed by two physical techniques: electron-beam and pulsed-laser deposition. The quality of the film is analyzed by scanning electron microscopy, atomic force microscopy, and energy dispersive spectroscopy to characterize the morphology, topography, and chemical composition. The optical properties and optical constants are also determined. A CF(4) dry etching is performed on these films to obtain a channeled optical waveguide. For a passband filter made by electron-beam deposition, cryolite as a low-refractive-index material and chalcogenide glasses as high-refractive-index materials are used to favor a large refractive-index contrast. A shift of a centered wavelength of a photosensitive passband filter is controlled by illumination time. PMID:18449231

  13. Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

    PubMed

    Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

    2013-03-26

    We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency. PMID:23368728

  14. PHOEBE: PHysics Of Eclipsing BinariEs

    NASA Astrophysics Data System (ADS)

    Prsa, Andrej; Matijevic, Gal; Latkovic, Olivera; Vilardell, Francesc; Wils, Patrick

    2011-06-01

    PHOEBE (PHysics Of Eclipsing BinariEs) is a modeling package for eclipsing binary stars, built on top of the widely used WD program (Wilson & Devinney 1971). This introductory paper overviews most important scientific extensions (incorporating observational spectra of eclipsing binaries into the solution-seeking process, extracting individual temperatures from observed color indices, main-sequence constraining and proper treatment of the reddening), numerical innovations (suggested improvements to WD's Differential Corrections method, the new Nelder & Mead's downhill Simplex method) and technical aspects (back-end scripter structure, graphical user interface). While PHOEBE retains 100% WD compatibility, its add-ons are a powerful way to enhance WD by encompassing even more physics and solution reliability.

  15. The dynamics of photoinduced defect creation in amorphous chalcogenides: The origin of the stretched exponential function

    SciTech Connect

    Freitas, R. J.; Shimakawa, K.; Wagner, T.

    2014-01-07

    The article discusses the dynamics of photoinduced defect creations (PDC) in amorphous chalcogenides, which is described by the stretched exponential function (SEF), while the well known photodarkening (PD) and photoinduced volume expansion (PVE) are governed only by the exponential function. It is shown that the exponential distribution of the thermal activation barrier produces the SEF in PDC, suggesting that thermal energy, as well as photon energy, is incorporated in PDC mechanisms. The differences in dynamics among three major photoinduced effects (PD, PVE, and PDC) in amorphous chalcogenides are now well understood.

  16. The dynamics of photoinduced defect creation in amorphous chalcogenides: The origin of the stretched exponential function

    NASA Astrophysics Data System (ADS)

    Freitas, R. J.; Shimakawa, K.; Wagner, T.

    2014-01-01

    The article discusses the dynamics of photoinduced defect creations (PDC) in amorphous chalcogenides, which is described by the stretched exponential function (SEF), while the well known photodarkening (PD) and photoinduced volume expansion (PVE) are governed only by the exponential function. It is shown that the exponential distribution of the thermal activation barrier produces the SEF in PDC, suggesting that thermal energy, as well as photon energy, is incorporated in PDC mechanisms. The differences in dynamics among three major photoinduced effects (PD, PVE, and PDC) in amorphous chalcogenides are now well understood.

  17. Open framework metal chalcogenides as efficient photocatalysts for reduction of CO2 into renewable hydrocarbon fuel.

    PubMed

    Sasan, Koroush; Lin, Qipu; Mao, Chengyu; Feng, Pingyun

    2016-06-01

    Open framework metal chalcogenides are a family of porous semiconducting materials with diverse chemical compositions. Here we show that these materials containing covalent three-dimensional superlattices of nanosized supertetrahedral clusters can function as efficient photocatalysts for the reduction of CO2 to CH4. Unlike dense semiconductors, metal cations are successfully incorporated into the channels of the porous semiconducting materials to further tune the physical properties of the materials such as electrical conductivity and band gaps. In terms of the photocatalytic properties, the metal-incorporated porous chalcogenides demonstrated enhanced solar energy absorption and higher electrical conductivity and improved photocatalytic activity. PMID:27186825

  18. Homogeneity and internal defects detect of infrared Se-based chalcogenide glass

    NASA Astrophysics Data System (ADS)

    Li, Zupana; Wu, Ligang; Lin, Changgui; Song, Bao'an; Wang, Xunsi; Shen, Xiang; Dai, Shixunb

    2011-10-01

    Ge-Sb-Se chalcogenide glasses is a kind of excellent infrared optical material, which has been enviromental friendly and widely used in infrared thermal imaging systems. However, due to the opaque feature of Se-based glasses in visible spectral region, it's difficult to measure their homogeneity and internal defect as the common oxide ones. In this study, a measurement was proposed to observe the homogeneity and internal defect of these glasses based on near-IR imaging technique and an effective measurement system was also constructed. The testing result indicated the method can gives the information of homogeneity and internal defect of infrared Se-based chalcogenide glass clearly and intuitionally.

  19. Permanent photoalignment of liquid crystals on nanostructured chalcogenide glassy thin films

    SciTech Connect

    Gelbaor, Miri; Abdulhalim, I.; Klebanov, Matvey; Lyubin, Victor

    2011-02-14

    Photoalignment of nematic liquid crystals is obtained on the chalcogenide glassy thin film of As{sub 2}S{sub 3} using irradiation with polarized blue light. A uniform homogeneously aligned device is obtained with high contrast and strong anchoring. The device alignment quality is permanent as checked by following its functionality over a period of few months. The origin of the observed photoalignment is attributed to the photoinduced anisotropy in chalcogenide glasses. No differences between the different As{sub 2}S{sub 3} film thicknesses observed, thus supporting the proposition that some orientational order is photoinduced on the surface of the glass and responsible for the photoalignment.

  20. Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique

    NASA Astrophysics Data System (ADS)

    Meng, Xiuqing; Pant, Anupum; Cai, Hui; Kang, Jun; Sahin, Hasan; Chen, Bin; Wu, Kedi; Yang, Sijie; Suslu, Aslihan; Peeters, F. M.; Tongay, Sefaattin

    2015-10-01

    Owing to their strong photon emission, low excitonic binding energies, and nearly-ideal band offset values for water splitting reactions, direct gap quasi-2D gallium chalcogenides are potential candidates for applications in energy harvesting, optoelectronics, and photonics. Unlike other 2D materials systems, chemical functionalization of gallium chalcogenides is still at its seminal stages. Here, we propose vapor phase pyridine intercalation technique to manipulate optical properties of gallium chalcogenides. After functionalization, the excitonic dynamics of quasi-2D GaSe change significantly as evidenced by an increase in integrated PL intensity and emergence of a new emission feature that is below the band edge. Based on our DFT calculations, we attribute these to formation of bound exciton complexes at the trap sites introduced by chemical reaction between pyridine and GaSe. On the contrary, pyridine functionalization does not impact the optical properties of GaTe, instead treats GaTe surface to prevent oxidization of tellurium atoms. Overall, results suggest novel ways to control properties of gallium chalcogenides on demand and unleash their full potential for a range of applications in photonics and optoelectronics.Owing to their strong photon emission, low excitonic binding energies, and nearly-ideal band offset values for water splitting reactions, direct gap quasi-2D gallium chalcogenides are potential candidates for applications in energy harvesting, optoelectronics, and photonics. Unlike other 2D materials systems, chemical functionalization of gallium chalcogenides is still at its seminal stages. Here, we propose vapor phase pyridine intercalation technique to manipulate optical properties of gallium chalcogenides. After functionalization, the excitonic dynamics of quasi-2D GaSe change significantly as evidenced by an increase in integrated PL intensity and emergence of a new emission feature that is below the band edge. Based on our DFT calculations

  1. Coherent mid-infrared supercontinuum generation in all-solid chalcogenide microstructured fibers with all-normal dispersion.

    PubMed

    Liu, Lai; Cheng, Tonglei; Nagasaka, Kenshiro; Tong, Hoangtuan; Qin, Guanshi; Suzuki, Takenobu; Ohishi, Yasutake

    2016-01-15

    We report the coherent mid-infrared supercontinuum generation in an all-solid chalcogenide microstructured fiber with all-normal dispersion. The chalcogenide microstructured fiber is a four-hole structure with core material of AsSe2 and air holes that are replaced by As2S5 glass rods. Coherent mid-infrared supercontinuum light extended to 3.3 μm is generated in a 2 cm long chalcogenide microstructured fiber pumped by a 2.7 μm laser. PMID:26766722

  2. Case A Binary Evolution

    SciTech Connect

    Nelson, C A; Eggleton, P P

    2001-03-28

    We undertake a comparison of observed Algol-type binaries with a library of computed Case A binary evolution tracks. The library consists of 5500 binary tracks with various values of initial primary mass M{sub 10}, mass ratio q{sub 0}, and period P{sub 0}, designed to sample the phase-space of Case A binaries in the range -0.10 {le} log M{sub 10} {le} 1.7. Each binary is evolved using a standard code with the assumption that both total mass and orbital angular momentum are conserved. This code follows the evolution of both stars until the point where contact or reverse mass transfer occurs. The resulting binary tracks show a rich variety of behavior which we sort into several subclasses of Case A and Case B. We present the results of this classification, the final mass ratio and the fraction of time spent in Roche Lobe overflow for each binary system. The conservative assumption under which we created this library is expected to hold for a broad range of binaries, where both components have spectra in the range G0 to B1 and luminosity class III - V. We gather a list of relatively well-determined observed hot Algol-type binaries meeting this criterion, as well as a list of cooler Algol-type binaries where we expect significant dynamo-driven mass loss and angular momentum loss. We fit each observed binary to our library of tracks using a {chi}{sup 2}-minimizing procedure. We find that the hot Algols display overall acceptable {chi}{sup 2}, confirming the conservative assumption, while the cool Algols show much less acceptable {chi}{sup 2} suggesting the need for more free parameters, such as mass and angular momentum loss.

  3. Z-scan and four-wave mixing characterization of semiconductor cadmium chalcogenide nanomaterials

    NASA Astrophysics Data System (ADS)

    Yang, Qiguang; Seo, Jae Tae; Creekmore, Santiel; Tan, Guolong; Brown, Herbert; Ma, Seong Min; Creekmore, Linwood; Jackson, Ashley; Skyles, Tifney; Tabibi, Bagher; Wang, Huitian; Jung, Sung Soo; Namkung, Min

    2006-05-01

    The possible physical origin of third-order nonlinearity of cadmium chalcogenide (Te, Se, and S) semiconductor nanocrystals were discussed based on the results of both Z-scan and degenerate four-wave mixing spectroscopies at 532, 775, 800, and 1064 nm in nanosecond, picosecond, and femtosecond time scale for nonlinear photonic applications.

  4. Effect of light polarization on holographic recording in glassy azocompounds and chalcogenides

    NASA Astrophysics Data System (ADS)

    Ozols, Andris; Kokars, Valdis; Augustovs, Peteris; Uiska, Ilze; Traskovskis, Kaspars; Saharov, Dmitry

    2011-04-01

    Light polarization effects on a holographic grating recording in a glassy chalcogenide a-As40S15Se45 film has been experimentally studied and compared with previously studied glassy molecular azobenzene film 8a at 633, using s - s,p - p, CE-1 and CE-2 circular-elliptic recording-beam polarizations (differing by light electric field rotation directions). The azocompound exhibited much higher self-diffraction efficiency (SDE) and diffraction efficiency whereas chalcogenide was more sensitive. Their recording efficiency polarization dependences also were different. SDE up to 45% was achieved in 8a with p - p and up to 2.6% in a-As40S15Se45 with CE-2 polarized recording beams. The polarization changes in the diffraction process were studied as well in these and other materials ( 11, 16, 19 and a-As2S3 film, LiTaO3:Fe crystal). It was found that light polarization changes in the process of diffraction from gratings recorded vectorially by s- p polarizations depended on chemical composition, wavelength, and exposure time. Vector gratings with SDE up to 25% were recorded in 8a, rotating a linear polarization by 90°. No light polarization changes were found in azobenzene 19 and chalcogenide films and in LiTaO3:Fe crystal, thus showing a vector recording of scalar holograms. The recording mechanisms in azocompounds and chalcogenides are discussed and compared.

  5. Effect of light polarization on holographic recording in glassy azocompounds and chalcogenides

    NASA Astrophysics Data System (ADS)

    Ozols, Andris; Kokars, Valdis; Augustovs, Peteris; Uiska, Ilze; Traskovskis, Kaspars; Saharov, Dmitry

    2011-04-01

    Light polarization effects on a holographic grating recording in a glassy chalcogenide a-As40S15Se45 film has been experimentally studied and compared with previously studied glassy molecular azobenzene film 8a at 633, using s - s,p - p, CE-1 and CE-2 circular-elliptic recording-beam polarizations (differing by light electric field rotation directions). The azocompound exhibited much higher self-diffraction efficiency (SDE) and diffraction efficiency whereas chalcogenide was more sensitive. Their recording efficiency polarization dependences also were different. SDE up to 45% was achieved in 8a with p - p and up to 2.6% in a-As40S15Se45 with CE-2 polarized recording beams. The polarization changes in the diffraction process were studied as well in these and other materials (11, 16, 19 and a-As2S3 film, LiTaO3:Fe crystal). It was found that light polarization changes in the process of diffraction from gratings recorded vectorially by s-p polarizations depended on chemical composition, wavelength, and exposure time. Vector gratings with SDE up to 25% were recorded in 8a, rotating a linear polarization by 90°. No light polarization changes were found in azobenzene 19 and chalcogenide films and in LiTaO3:Fe crystal, thus showing a vector recording of scalar holograms. The recording mechanisms in azocompounds and chalcogenides are discussed and compared.

  6. Study of kinetics of crystallization of Ge7Se75Sb18 chalcogenide glass

    NASA Astrophysics Data System (ADS)

    Tanwar, Naveen; Saraswat, Vibhav K.

    2014-04-01

    Present paper is an attempt to study kinetics of crystallization of Ge7Se75Sb18 chalcogenide glass by Differential Scanning Calorimetery (DSC) under non-isothermal condition. The sample was prepared by melt quenched technique and amorphous nature has been confirmed by XRD. Activation energy of crystallization has been evaluated using Kissinger, Augis-Bennett and Ozawa models.

  7. Measurement of chalcogenide glass optical dispersion using a mid-infrared prism coupler

    SciTech Connect

    Qiao, Hong; Anheier, Norman C.; Musgraves, Jonathan D.; Richardson, Kathleen; Hewak, Daniel W.

    2011-05-01

    Physical properties of chalcogenide glass, including broadband infrared transparency, high refractive index, low glass transition temperature, and nonlinear properties, make them attractive candidates for advanced mid-infrared (3 to 12 {micro}m) optical designs. Efforts focused at developing new chalcogenide glass formulations and processing methods require rapid quantitative evaluation of their optical contents to guide the materials research. However, characterization of important optical parameters such as optical dispersion remains a slow and costly process, generally with limited accuracy. The recent development of a prism coupler at the Pacific Northwest National Laboratory (PNNL) now enables rapid, high precision measurement of refractive indices at discrete wavelengths from the visible to the mid-infrared. Optical dispersion data of several chalcogenide glass families were collected using this method. Variations in the optical dispersion were correlated to glass composition and compared against measurements using other methods. While this work has been focused on facilitating chalcogenide glass synthesis, mid-infrared prism coupler analysis has broader applications to other mid-infrared optical material development efforts, including oxide glasses and crystalline materials.

  8. Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique.

    PubMed

    Meng, Xiuqing; Pant, Anupum; Cai, Hui; Kang, Jun; Sahin, Hasan; Chen, Bin; Wu, Kedi; Yang, Sijie; Suslu, Aslihan; Peeters, F M; Tongay, Sefaattin

    2015-10-28

    Owing to their strong photon emission, low excitonic binding energies, and nearly-ideal band offset values for water splitting reactions, direct gap quasi-2D gallium chalcogenides are potential candidates for applications in energy harvesting, optoelectronics, and photonics. Unlike other 2D materials systems, chemical functionalization of gallium chalcogenides is still at its seminal stages. Here, we propose vapor phase pyridine intercalation technique to manipulate optical properties of gallium chalcogenides. After functionalization, the excitonic dynamics of quasi-2D GaSe change significantly as evidenced by an increase in integrated PL intensity and emergence of a new emission feature that is below the band edge. Based on our DFT calculations, we attribute these to formation of bound exciton complexes at the trap sites introduced by chemical reaction between pyridine and GaSe. On the contrary, pyridine functionalization does not impact the optical properties of GaTe, instead treats GaTe surface to prevent oxidization of tellurium atoms. Overall, results suggest novel ways to control properties of gallium chalcogenides on demand and unleash their full potential for a range of applications in photonics and optoelectronics. PMID:26419224

  9. Open framework metal chalcogenides as efficient photocatalysts for reduction of CO2 into renewable hydrocarbon fuel

    NASA Astrophysics Data System (ADS)

    Sasan, Koroush; Lin, Qipu; Mao, Chengyu; Feng, Pingyun

    2016-05-01

    Open framework metal chalcogenides are a family of porous semiconducting materials with diverse chemical compositions. Here we show that these materials containing covalent three-dimensional superlattices of nanosized supertetrahedral clusters can function as efficient photocatalysts for the reduction of CO2 to CH4. Unlike dense semiconductors, metal cations are successfully incorporated into the channels of the porous semiconducting materials to further tune the physical properties of the materials such as electrical conductivity and band gaps. In terms of the photocatalytic properties, the metal-incorporated porous chalcogenides demonstrated enhanced solar energy absorption and higher electrical conductivity and improved photocatalytic activity.Open framework metal chalcogenides are a family of porous semiconducting materials with diverse chemical compositions. Here we show that these materials containing covalent three-dimensional superlattices of nanosized supertetrahedral clusters can function as efficient photocatalysts for the reduction of CO2 to CH4. Unlike dense semiconductors, metal cations are successfully incorporated into the channels of the porous semiconducting materials to further tune the physical properties of the materials such as electrical conductivity and band gaps. In terms of the photocatalytic properties, the metal-incorporated porous chalcogenides demonstrated enhanced solar energy absorption and higher electrical conductivity and improved photocatalytic activity. Electronic supplementary information (ESI) available: The synthetic procedure, facilities information, EDX patterns and UV-Vis data. See DOI: 10.1039/c6nr02525k

  10. Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

    PubMed

    Zhou, Yubing; Deng, Bing; Zhou, Yu; Ren, Xibiao; Yin, Jianbo; Jin, Chuanhong; Liu, Zhongfan; Peng, Hailin

    2016-03-01

    The growth of high-quality two-dimensional (2D) layered chalcogenide crystals is highly important for practical applications in future electronics, optoelectronics, and photonics. Current route for the synthesis of 2D chalcogenide crystals by vapor deposition method mainly involves an energy intensive high-temperature growth process on solid substrates, often suffering from inhomogeneous nucleation density and grain size distribution. Here, we first demonstrate a facile vapor-phase synthesis of large-area high-quality 2D layered chalcogenide crystals on liquid metal surface with relatively low surface energy at a growth temperature as low as ∼100 °C. Uniform and large-domain-sized 2D crystals of GaSe and GaxIn1-xSe were grown on liquid metal surface even supported on a polyimide film. As-grown 2D GaSe crystals have been fabricated to flexible photodetectors, showing high photoresponse and excellent flexibility. Our strategy of energy-sustainable low-temperature growth on liquid metal surface may open a route to the synthesis of high-quality 2D crystals of Ga-, In-, Bi-, Hg-, Pb-, or Sn-based chalcogenides and halides. PMID:26913671

  11. Electronic origins of the magnetic phase transitions in zinc-blende Mn chalcogenides

    SciTech Connect

    Wei, S.; Zunger, A. )

    1993-09-01

    Precise first-principles spin-polarized total-energy and band-structure calculations have been performed for the zinc-blende Mn chalcogenides with the use of the local-spin-density (LSD) approach. We find that the LSD is capable of identifying the correct magnetic-ground-state structure, but it overestimates the ordering temperature [ital T][sub [ital N

  12. Driving Oxygen Coordinated Ligand Exchange at Nanocrystal Surfaces using Trialkylsilylated Chalcogenides

    SciTech Connect

    Caldwell, Marissa A.; Albers, Aaron E.; Levy, Seth C.; Pick, Teresa E.; Cohen, Bruce E.; Helms, Brett A.; Milliron, Delia J.

    2010-11-11

    A general, efficient method is demonstrated for exchanging native oxyanionic ligands on inorganic nanocrystals with functional trimethylsilylated (TMS) chalcogenido ligands. In addition, newly synthesized TMS mixed chalcogenides leverage preferential reactivity of TMS-S bonds over TMS-O bonds, enabling efficient transfer of luminescent nanocrystals into aqueous media with retention of their optical properties.

  13. New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

    SciTech Connect

    Kassem, M.; Le Coq, D.; Boidin, R.; Bychkov, E.

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

  14. Laser annealing and defect study of chalcogenide photovoltaic materials

    NASA Astrophysics Data System (ADS)

    Bhatia, Ashish

    Cu(In,Ga)Se2 (CIGSe), CuZnSn(S,Se)4(CZTSSe), etc., are the potential chalcogenide semiconductors being investigated for next-generation thin film photovoltaics (TFPV). While the champion cell efficiency of CIGSe has exceeded 20%, CZTSSe has crossed the 10% mark. This work investigates the effect of laser annealing on CISe films, and compares the electrical characteristics of CIGSe (chalcopyrite) and CZTSe (kesterite) solar cells. Chapter 1 through 3 provide a background on semiconductors and TFPV, properties of chalcopyrite and kesterite materials, and their characterization using deep level transient spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). Chapter 4 investigates electrochemical deposition (nonvacuum synthesis) of CISe followed by continuous wave laser annealing (CWLA) using a 1064 nm laser. It is found that CWLA at ≈ 50 W/cm2 results in structural changes without melting and dewetting of the films. While Cu-poor samples show about 40% reduction in the full width at half maximum of the respective x-ray diffraction peaks, identically treated Cu-rich samples register more than 80% reduction. This study demonstrates that an entirely solid-phase laser annealing path exists for chalcopyrite phase formation and crystallization. Chapter 5 investigates the changes in defect populations after pulse laser annealing in submelting regime of electrochemically deposited and furnace annealed CISe films. DLTS on Schottky diodes reveal that the ionization energy of the dominant majority carrier defect state changes nonmonotonically from 215+/-10 meV for the reference sample, to 330+/-10 meV for samples irradiated at 20 and 30 mJ/cm2, and then back to 215+/-10 meV for samples irradiated at 40 mJ/cm2. A hypothesis involving competing processes of diffusion of Cu and laser-induced generation of In vacancies may explain this behavior. Chapter 6 compares the electrical characteristics of chalcopyrite and kesterite materials. Experiments reveal CZTSe cell has an

  15. Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

    NASA Technical Reports Server (NTRS)

    Nessel, James; Miranda, Felix

    2013-01-01

    A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it

  16. Coherent mid-infrared supercontinuum generation in all-solid chalcogenide microstructured fibers with all-normal dispersion

    NASA Astrophysics Data System (ADS)

    Liu, Lai; Cheng, Tonglei; Nagasaka, Kenshiro; Tong, Hoang Tuan; Suzuki, Takenobu; Ohishi, Yasutake

    2016-02-01

    We report the coherent mid-infrared supercontinuum generation in an all-solid chalcogenide microstructured fiber with all-normal dispersion. The chalcogenide microstructured fiber is four-hole structure with core material of AsSe2 and air holes are replaced by As2S5 glass rods. Coherent mid-infrared supercontinuum light is generated in a 2-cm-long chalcogenide microstructured fiber pumped by a 2.7 μm laser. The simulated and experimental results have a good match and the coherence property of supercontinuum light in the chalcogenide microstructured fiber has been studied by using the complex degree of coherence theory. Coherent mid-infrared supercontinuum generation is extended to 3.3 μm in this work.

  17. Effect of the Chalcogenide Element Doping on the Electronic Properties of Co2FeAl Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Huang, Ting; Cheng, Xiao-min; Guan, Xia-wei; Miao, Xiang-shui

    2016-02-01

    The electronic properties of the typical Heusler compound Co2FeAl with chalcogenide element doping were investigated by means of first principles calculations within the local spin-density approximation (LSDA) + Hubbard U parameter (U). The calculations indicate that, only when 25% of the number of Al atoms is substituted by the chalcogenide element, the chalcogenide element-doped Co2FeAl shows the half metallic properties. The Fermi energy ( E F) of the 25% chalcogenide element-doped Co2FeAl is located in the middle of the gap of the minority states instead of around the top of the valence band as in Co2FeAl. Moreover, the band gap of 25% Te-doped Co2FeAl (0.80 eV) is wider than that of Co2FeAl (0.74 eV). These improved electronic structures will make 25% chalcogenide element-doped Co2FeAl more stable against temperature variation. Therefore, the expected excellent stability of the 25% chalcogenide element-doped Co2FeAl make it more suitable for spintronic applications than Co2FeAl.

  18. Double Degenerate Binary Systems

    SciTech Connect

    Yakut, K.

    2011-09-21

    In this study, angular momentum loss via gravitational radiation in double degenerate binary (DDB)systems (NS + NS, NS + WD, WD + WD, and AM CVn) is studied. Energy loss by gravitational waves has been estimated for each type of systems.

  19. Binary synchronous simulator

    NASA Technical Reports Server (NTRS)

    Rogers, J. R., III

    1980-01-01

    Flexible simulator for trouble-shooting data transmission system uses binary synchronous communications protocol to produce error-free transmission of data between two points. Protocol may be used to replace display generator or be directly fed to display generator.

  20. Binary pattern deflectometry.

    PubMed

    Butel, Guillaume P; Smith, Greg A; Burge, James H

    2014-02-10

    Deflectometry is widely used to accurately calculate the slopes of any specular reflective surface, ranging from car bodies to nanometer-level mirrors. This paper presents a new deflectometry technique using binary patterns of increasing frequency to retrieve the surface slopes. Binary Pattern Deflectometry allows almost instant, simple, and accurate slope retrieval, which is required for applications using mobile devices. The paper details the theory of this deflectometry method and the challenges of its implementation. Furthermore, the binary pattern method can also be combined with a classic phase-shifting method to eliminate the need of a complex unwrapping algorithm and retrieve the absolute phase, especially in cases like segmented optics, where spatial algorithms have difficulties. Finally, whether it is used as a stand-alone or combined with phase-shifting, the binary patterns can, within seconds, calculate the slopes of any specular reflective surface. PMID:24663273

  1. X-ray binaries

    NASA Technical Reports Server (NTRS)

    1976-01-01

    Satellite X-ray experiments and ground-based programs aimed at observation of X-ray binaries are discussed. Experiments aboard OAO-3, OSO-8, Ariel 5, Uhuru, and Skylab are included along with rocket and ground-based observations. Major topics covered are: Her X-1, Cyg X-3, Cen X-3, Cyg X-1, the transient source A0620-00, other possible X-ray binaries, and plans and prospects for future observational programs.

  2. Binary-Symmetry Detection

    NASA Technical Reports Server (NTRS)

    Lopez, Hiram

    1987-01-01

    Transmission errors for zeros and ones tabulated separately. Binary-symmetry detector employs psuedo-random data pattern used as test message coming through channel. Message then modulo-2 added to locally generated and synchronized version of test data pattern in same manner found in manufactured test sets of today. Binary symmetrical channel shows nearly 50-percent ones to 50-percent zeroes correspondence. Degree of asymmetry represents imbalances due to either modulation, transmission, or demodulation processes of system when perturbed by noise.

  3. Spectroscopic Binary Stars

    NASA Astrophysics Data System (ADS)

    Batten, A.; Murdin, P.

    2000-11-01

    Historically, spectroscopic binary stars were binary systems whose nature was discovered by the changing DOPPLER EFFECT or shift of the spectral lines of one or both of the component stars. The observed Doppler shift is a combination of that produced by the constant RADIAL VELOCITY (i.e. line-of-sight velocity) of the center of mass of the whole system, and the variable shift resulting from the o...

  4. Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

    PubMed Central

    Casarin, Barbara; Caretta, Antonio; Momand, Jamo; Kooi, Bart J.; Verheijen, Marcel A.; Bragaglia, Valeria; Calarco, Raffaella; Chukalina, Marina; Yu, Xiaoming; Robertson, John; Lange, Felix R. L.; Wuttig, Matthias; Redaelli, Andrea; Varesi, Enrico; Parmigiani, Fulvio; Malvestuto, Marco

    2016-01-01

    The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices. PMID:26926116

  5. Progress on a New Non-Volatile Memory for Space Based on Chalcogenide Glass

    SciTech Connect

    Maimon, J.; Hunt, K.; Rodgers, J.; Burcin, L.; Knowles, K.

    2004-02-04

    We report on the progress of a recent addition to non-volatile solid state memory technologies suited for space and other ionizing radiation environments. We summarize the material and processing science behind the current generation of chalcogenide phase-change memories fabricated on CMOS structures. The chalcogenide material used for phase-change applications in rewritable optical storage (Ge2Sb2Te5) has been integrated with a radiation hardened CMOS process to produce 64kbit memory arrays. On selected arrays electrical testing demonstrated up to 100% memory cell yield, 100ns programming and read speeds, and write currents as low as 1mA/bit. Devices functioned normally from - 55 deg. C to 125 deg. C. Write/read endurance has been demonstrated to 1 x 108 before first bit failure. Radiation results show no degradation to the hardened CMOS or effects that can be attributed to the phase-change material. Future applications of the technology are discussed.

  6. Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method

    NASA Astrophysics Data System (ADS)

    Zhang, Shao-qian; Němec, Petre; Nazabal, Virginie; Jin, Yu-qi

    2016-05-01

    Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.

  7. A comprehensive review of the application of chalcogenide nanoparticles in polymer solar cells

    NASA Astrophysics Data System (ADS)

    Freitas, Jilian N.; Gonçalves, Agnaldo S.; Nogueira, Ana F.

    2014-05-01

    In this review the use of solution-processed chalcogenide quantum dots (CdS, CdSe, PbS, etc.) in hybrid organic-inorganic solar cells is explored. Such devices are known as potential candidates for low-cost and efficient solar energy conversion, and compose the so-called third generation solar cells. The incorporation of oxides and metal nanoparticles has also been successfully achieved in this new class of photovoltaic devices; however, we choose to explore here chalcogenide quantum dots in light of their particularly attractive optical and electronic properties. We address herein a comprehensive review of the historical background and state-of-the-art comprising the incorporation of such nanoparticles in polymer matrices. Later strategies for surface chemistry manipulation, in situ synthesis of nanoparticles, use of continuous 3D nanoparticles network (aerogels) and ternary systems are also reviewed.

  8. Direct imprinting on chalcogenide glass and fabrication of infrared wire-grid polarizer

    NASA Astrophysics Data System (ADS)

    Yamada, Itsunari; Yamashita, Naoto; Einishi, Toshihiko; Saito, Mitsunori; Fukumi, Kouhei; Nishii, Junji

    2013-05-01

    Infrared wire-grid polarizers were fabricated consisting of a 500-nm pitch Al grating on a low toxic chalcogenide glass (Sb-Ge-Sn-S system) using the direct imprinting of subwavelength grating followed by a deposition of Al metal by thermal evaporation. To fabricate the subwavelength grating on a chalcogenide glass more easily, the sharp grating was formed on the mold surface. The fabricated polarizer with Al thickness of 130 nm exhibited a polarization function with a transverse magnetic transmittance greater than 60% in the 5-9-μm wavelength range, and an extinction ratio greater than 20 dB in the 4-11-μm wavelength range. The polarizer can be fabricated at lower costs and simpler fabrication processes compared to conventional infrared polarizers.

  9. Infrared Polarizer Fabrication by Imprinting on Sb-Ge-Sn-S Chalcogenide Glass

    NASA Astrophysics Data System (ADS)

    Yamada, Itsunari; Yamashita, Naoto; Tani, Kunihiko; Einishi, Toshihiko; Saito, Mitsunori; Fukumi, Kouhei; Nishii, Junji

    2012-01-01

    We fabricated infrared wire-grid polarizers consisting of a 500-nm pitch Al grating on a low toxic chalcogenide glass (Sb-Ge-Sn-S system) using the direct imprinting of subwavelength grating followed by a deposition of Al metal by thermal evaporation. To fabricate the subwavelength grating on a chalcogenide glass more easily, the sharp grating was formed on the mold surface. The fabricated polarizer with Al thickness of 130 nm exhibited a polarization function with a transverse magnetic transmittance greater than 60% in the 5-9 µm wavelength range, and an extinction ratio greater than 20 dB in 3.5-11 µm wavelength range. The extinction ratio of the element with Al wires of 180-nm thickness reached 27 dB at 5.4-µm wavelength. The polarizer can be fabricated at lower costs and simpler fabrication processes compared to conventional infrared polarizers.

  10. Fabrication of Achromatic Infrared Wave Plate by Direct Imprinting Process on Chalcogenide Glass

    NASA Astrophysics Data System (ADS)

    Yamada, Itsunari; Yamashita, Naoto; Tani, Kunihiko; Einishi, Toshihiko; Saito, Mitsunori; Fukumi, Kouhei; Nishii, Junji

    2012-07-01

    An achromatic infrared wave plate was fabricated by forming a subwavelength grating on the chalcogenide glass using direct imprint lithography. A low toxic chalcogenide glass (Sb-Ge-Sn-S system) substrate was imprinted with a grating of 1.63-µm depth, a fill factor of 0.7, and 3-µm period using glassy carbon as a mold at 253 °C and 3.8 MPa. Phase retardation of the element reached around 30° at 8.5-10.5 µm wavelengths, and the transmittance exceeded that of a flat substrate over 8 µm wavelength. Fabrication of the mid-infrared wave plate is thereby less expensive than that of conventional crystalline wave plates.

  11. Structural investigation of Bi doped InSe chalcogenide thin films using Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Sharma, Shaveta; Sharma, Rita; Kumar, Praveen; Chander, Ravi; Thangaraj, R.; Mian, M.

    2015-05-01

    The infrared transparency of the chalcogenide glasses have been investigated presently for the CO/CO2 laser power in various medical diagnostic applications. The addition of Bi improves the chemical durability and broadens the IR transparency region of various chalcogenide glassy systems. In the present work, we have studied the effect of Bi addition on the structural properties of In-Se thin films by using the RAMAN spectroscopy. The melt quenched bulk ingot of BixIn25-xSe75 (1≤ x≤ 7) alloys were used for the vacuum thermal evaporation of films in a vacuum better than 10-5 mbar. RAMAN bands at 1575, 1354 and 525 cm-1 has been observed, while with the increase in the Bi concentration vibrational band disappear at 525 cm-1 in sample x=7.

  12. Recording of polarization holograms in a liquid crystal cell with a photosensitive chalcogenide orientation layer [Invited].

    PubMed

    Sheremet, Nina; Kurioz, Yuriy; Slyusarenko, Kostyantyn; Trunov, Michael; Reznikov, Yuriy

    2013-08-01

    Polarization gratings have been recorded in a combined liquid crystal (LC) cell made of a substrate covered with a photosensitive chalcogenide orientation layer and a reference substrate covered with a rubbed polyimide film. The gratings are formed due to the spatially modulated light-induced easy orientation axis on the chalcogenide surface recorded by two beams with opposite circular polarizations. The gratings are permanent, but they can be erased by one of the recording beams and re-recorded. The diffraction intensity of the circularly polarized light is achromatic and does not depend on the birefringence of the LC. The diffraction efficiency of the grating is of the order of a few percents. Application of an ac field causes a strong increase of the diffraction efficiency up to 45%. PMID:23913086

  13. Gamma radiation induced effects in floppy and rigid Ge-containing chalcogenide thin films

    SciTech Connect

    Ailavajhala, Mahesh S.; Mitkova, Maria; Gonzalez-Velo, Yago; Barnaby, Hugh; Kozicki, Michael N.; Holbert, Keith; Poweleit, Christian; Butt, Darryl P.

    2014-01-28

    We explore the radiation induced effects in thin films from the Ge-Se to Ge-Te systems accompanied with silver radiation induced diffusion within these films, emphasizing two distinctive compositional representatives from both systems containing a high concentration of chalcogen or high concentration of Ge. The studies are conducted on blanket chalcogenide films or on device structures containing also a silver source. Data about the electrical conductivity as a function of the radiation dose were collected and discussed based on material characterization analysis. Raman Spectroscopy, X-ray Diffraction Spectroscopy, and Energy Dispersive X-ray Spectroscopy provided us with data about the structure, structural changes occurring as a result of radiation, molecular formations after Ag diffusion into the chalcogenide films, Ag lateral diffusion as a function of radiation and the level of oxidation of the studied films. Analysis of the electrical testing suggests application possibilities of the studied devices for radiation sensing for various conditions.

  14. Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

    NASA Astrophysics Data System (ADS)

    Casarin, Barbara; Caretta, Antonio; Momand, Jamo; Kooi, Bart J.; Verheijen, Marcel A.; Bragaglia, Valeria; Calarco, Raffaella; Chukalina, Marina; Yu, Xiaoming; Robertson, John; Lange, Felix R. L.; Wuttig, Matthias; Redaelli, Andrea; Varesi, Enrico; Parmigiani, Fulvio; Malvestuto, Marco

    2016-03-01

    The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.

  15. Freely adjusted properties in Ge-S based chalcogenide glasses with iodine incorporation

    NASA Astrophysics Data System (ADS)

    Zhu, Minming; Wang, Xunsi; Jiang, Chen; Xu, Huijuan; Nie, Qiuhua; Zhang, Peiquan; Dai, Shixun; Shen, Xiang; Xu, Tiefeng; Tao, Guangming; Zhang, Xianghua

    2015-03-01

    In this study, we examined the function of halogen iodine acting as a glass network modifier in green chalcogenide glasses based on the Ge-S system. We obtained a series of Ge-S-I glasses and determined their glass-forming region. We then recorded the physical, thermal, and optical properties and studied the effect of halogen iodine on Ge-S-I glasses. Results show that these glasses have relatively wide optical transmission window for infrared (IR) applications. The softening temperature of Ge-S-I glasses varies from 210.54 °C to 321.63 °C, this temperature fits well with some kinds of high-temperature polymers, such as PES and PEI, the polymers serve as protective layers with high strength and flexibility, thus simplifying the fabrication processes of IR chalcogenide glass fiber. Finally, we performed a purification process to eliminate impurities and to improve optical spectra.

  16. Bending-induced mode non-degeneracy and coupling in chalcogenide negative curvature fibers.

    PubMed

    Wei, Chengli; Menyuk, Curtis R; Hu, Jonathan

    2016-05-30

    We study bend loss in chalcogenide negative curvature fibers with different polarizations, different tube wall thicknesses, and different bend directions relative to the mode polarization. The coupling between the core mode and tube modes induces bend loss peaks in the two non-degenerate modes at the same bend radius. There is as much as a factor of 28 difference between the losses of the two polarization modes. The fiber with a larger tube wall thickness, corresponding to a smaller inner tube diameter, can sustain a smaller bend radius. The bend loss is sensitive to the bend direction when coupling occurs between the core mode and tube modes. A bend loss of 0.2 dB/m at a bend radius of 16 cm, corresponding to 0.2 dB/turn, can be achieved in a chalcogenide negative curvature fiber. PMID:27410139

  17. Enhancing extraction efficiency of mid-infrared fluorescence in chalcogenide glass via photonic crystal

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Zhang, Peiqing; Ma, Beijiao; Dai, Shixun; Zhang, Wei; Nie, Qiuhua

    2016-04-01

    The use of rare earth-doped chalcogenide glass is an attractive method to develop mid-infrared sources. In this work, Er3+-doped chalcogenide glass is prepared, and photonic crystal (PC) pattern is designed to improve the extraction efficiency of light emission from the sample surface. The finite difference time domain simulation shows that the light extraction efficiency from the sample surface can be 1.62 times stronger than that from the sample without PC structure by introducing a simple two-dimensional (2D) PC structure into glass samples. This improvement was the result of the efficient light diffraction on the surface because of the integrated 2D PC. Results in this work offer a potential in developing midinfrared light sources.

  18. Tuning the Synthesis of Ternary Lead Chalcogenide Quantum Dots by Balancing Precursor Reactivity

    SciTech Connect

    Smith, Danielle K.; Luther, Joseph M; Semonin, Octavi Escala; Nozik, Arthur J; Beard, Matthew C

    2011-01-25

    We report the synthesis and characterization of composition-tunable ternary lead chalcogenide alloys PbSe{sub x}Te{sub 1-x}, PbS{sub x}Te{sub 1-x}, and PbS{sub x}Se{sub 1-x}. This work explores the relative reaction rates of chalcogenide precursors to produce alloyed quantum dots (QDs), and we find the highly reactive bis(trimethylsilyl) (TMS{sub 2})-based precursors allow for the homogeneous incorporation of anions. By varying the Pb to oleic acid ratio, we demonstrate size control of similar composition alloys. We find the resulting QDs are Pb-rich but the Pb/anion ratio is size- and composition-dependent in all alloyed QD as well as in PbSe, PbTe, and PbS QDs and is consistent with the reaction rates of the anion precursors. A more reactive anion precursor results in a lower Pb/anion ratio.

  19. The mechanism of alcoholic beverage induced superconductivity in Fe-chalcogenide compounds

    NASA Astrophysics Data System (ADS)

    Deguchi, Keita; Demura, Satoshi; Okazaki, Hiroyuki; Denholme, Saleem; Fujioka, Masaya; Ozaki, Toshinori; Yamaguchi, Takahide; Takeya, Hiroyuki; Takano, Yoshihiko

    2013-03-01

    We have clarified the mechanism of alcoholic beverage induced superconductivity in Fe-chalcogenide compounds. Previously we reported that the bulk superconductivity in Fe-based compounds Fe(Te, Se) and Fe(Te, S) is achieved by heating in alcoholic beverages. However, the exact mechanism of how they act to enhance the superconductivity in the compounds remains unsolved. To understand the effect of alcoholic beverage treatment, we investigated the mechanism using a technology of metabolomic analysis. We found that weak acid in alcoholic beverages has the ability to deintercalate the excess Fe, which is not in favor of superconductivity. In this presentation, we will discuss the systematic mechanism to induce superconductivity in Fe-chalcogenide compounds.

  20. Solution processed chalcogenide films and micro-patterns via self-assembly

    NASA Astrophysics Data System (ADS)

    Singh, Radhakant; Sachan, Priyanka; Dwivedi, Prabhat K.; Sharma, Ashutosh

    2016-05-01

    Chalcogenide (ChG) are the choice materials for IR applications due to their high refractive index, mid IR transparency and high nonlinear optical properties. In this work, we study the characteristics of solution processed Chalcogenide films, As2S3 prepared by various amine solvents, for possible pattern fabrications. Since solution processed ChG films tend to contain solvent related defects, it is important to optimize the process parameters to create defect free films, structurally similar to bulk ChG. We have studied the physical integrity and morphology of solution processed ChG films as a function of annealing conditions and film thickness. Optical and morphological characterizations of these films are carried out in order to fabricate defect free, optically useful micro-structures.

  1. Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy.

    PubMed

    Klein, Andreas

    2015-04-10

    Energy band alignment plays an important role in thin film solar cells. This article presents an overview of the energy band alignment in chalcogenide thin film solar cells with a particular focus on the commercially available material systems CdTe and Cu(In,Ga)Se2. Experimental results from two decades of photoelectron spectroscopy experiments are compared with density functional theory calculations taken from literature. It is found that the experimentally determined energy band alignment is in good agreement with theoretical predictions for many interfaces. These alignments, in particular the theoretically predicted alignments, can therefore be considered as the intrinsic or natural alignments for a given material combination. The good agreement between experiment and theory enables a detailed discussion of the interfacial composition of Cu(In,Ga)Se2/CdS interfaces in terms of the contribution of ordered vacancy compounds to the alignment of the energy bands. It is furthermore shown that the most important interfaces in chalcogenide thin film solar cells, those between Cu(In,Ga)Se2 and CdS and between CdS and CdTe are quite insensitive to the processing of the layers. There are plenty of examples where a significant deviation between experimentally-determined band alignment and theoretical predictions are evident. In such cases a variation of band alignment of sometimes more than 1 eV depending on interface preparation can be obtained. This variation can lead to a significant deterioration of device properties. It is suggested that these modifications are related to the presence of high defect concentrations in the materials forming the contact. The particular defect chemistry of chalcogenide semiconductors, which is related to the ionicity of the chemical bond in these materials and which can be beneficial for material and device properties, can therefore cause significant device limitations, as e.g. in the case of the CuInS2 thin film solar cells or for new

  2. Solution based approach for the fabrication of photonic devices in chalcogenide glasses

    NASA Astrophysics Data System (ADS)

    Prince, Raman, Swati; Dwivedi, Prabhat K.; Husain, M.; Zulfequar, M.

    2015-06-01

    In this report, we describe the solution preparation conditions of various chalcogenide glasses. The dissolution mechanism of (As2S3)60Ge40, (As2S3)60Se40 in ethanolamine is studied. Dynamic light scattering (DLS)measurements confirms that the particles in suspension are <10 nm in all the solutions.Prepared solutions are shown to possess similar molecular structure to the parent bulk glasses. Optical properties of the prepared solution are also discussed.

  3. A motion- and sound-activated, 3D-printed, chalcogenide-based triboelectric nanogenerator.

    PubMed

    Kanik, Mehmet; Say, Mehmet Girayhan; Daglar, Bihter; Yavuz, Ahmet Faruk; Dolas, Muhammet Halit; El-Ashry, Mostafa M; Bayindir, Mehmet

    2015-04-01

    A multilayered triboelectric nanogenerator (MULTENG) that can be actuated by acoustic waves, vibration of a moving car, and tapping motion is built using a 3D-printing technique. The MULTENG can generate an open-circuit voltage of up to 396 V and a short-circuit current of up to 1.62 mA, and can power 38 LEDs. The layers of the triboelectric generator are made of polyetherimide nanopillars and chalcogenide core-shell nanofibers. PMID:25722118

  4. High Cost/High Risk Components to Chalcogenide Molded Lens Model: Molding Preforms and Mold Technology

    SciTech Connect

    Bernacki, Bruce E.

    2012-10-05

    This brief report contains a critique of two key components of FiveFocal's cost model for glass compression molding of chalcogenide lenses for infrared applications. Molding preforms and mold technology have the greatest influence on the ultimate cost of the product and help determine the volumes needed to select glass molding over conventional single-point diamond turning or grinding and polishing. This brief report highlights key areas of both technologies with recommendations for further study.

  5. Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

    NASA Technical Reports Server (NTRS)

    Barron, Andrew R. (Inventor); Hepp, Aloysius F. (Inventor); Jenkins, Phillip P. (Inventor); MacInnes, Andrew N. (Inventor)

    1999-01-01

    A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

  6. On-chip mid-infrared gas detection using chalcogenide glass waveguide

    NASA Astrophysics Data System (ADS)

    Han, Z.; Lin, P.; Singh, V.; Kimerling, L.; Hu, J.; Richardson, K.; Agarwal, A.; Tan, D. T. H.

    2016-04-01

    We demonstrate an on-chip sensor for room-temperature detection of methane gas using a broadband spiral chalcogenide glass waveguide coupled with off-chip laser and detector. The waveguide is fabricated using UV lithography patterning and lift-off after thermal evaporation. We measure the intensity change due to the presence and concentration of methane gas in the mid-infrared (MIR) range. This work provides an approach for broadband planar MIR gas sensing.

  7. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    DOEpatents

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  8. New functionality of chalcogenide glasses for radiation sensing of nuclear wastes.

    PubMed

    Ailavajhala, M S; Gonzalez-Velo, Y; Poweleit, C D; Barnaby, H J; Kozicki, M N; Butt, D P; Mitkova, M

    2014-03-30

    Data about gamma radiation induced effects in Ge40Se60 chalcogenide thin films and radiation induced silver diffusion within these are presented. Blanket films and devices were created to study the structural changes, diffusion products, and device performance. Raman spectroscopy, X-ray diffraction, current vs. voltage (I-V) and impedance measurements expound the behavior of Ge40Se60 glass and silver diffusion within this glass under radiation. Raman study shows that there is a decrease in the area ratio between edge shared and corner shared structural units revealing structural reorganization occurring in the glasses as a result of gamma radiation. X-ray diffraction studies revealed that with sufficiently radiation dose it is also possible to create Ag2Se in selenium-depleted systems. Oxidation of the Ge enriched chalcogenide backbone is confirmed through the electrical performance of the sensing elements based on these films. Combination of these structural and diffusion products influences the device performance. The I-V behavior is characterized by increase in current and then stabilization as a function of radiation dose. Additionally, device modeling is also presented using Silvaco software and analytical methods to shed light on the device behavior. This type of sensor design and material characterizations facilitate in improving the radiation sensing capabilities of silver containing chalcogenide glass thin films. PMID:24332317

  9. Shaping of looped miniaturized chalcogenide fiber sensing heads for mid-infrared sensing.

    PubMed

    Houizot, Patrick; Anne, Marie-Laure; Boussard-Plédel, Catherine; Loréal, Olivier; Tariel, Hugues; Lucas, Jacques; Bureau, Bruno

    2014-01-01

    Chalcogenide glass fibers are promising photonic tools to develop Fiber Evanescent Wave Spectroscopy (FEWS) optical sensors working in the mid-infrared region. Numerous pioneering works have already been carried out showing their efficiency, especially for bio-medical applications. Nevertheless, this technology remains confined to academic studies at the laboratory scale because chalcogenide glass fibers are difficult to shape to produce reliable, sensitive and compact sensors. In this paper, a new method for designing and fabricating a compact and robust sensing head with a selenide glass fiber is described. Compact looped sensing heads with diameter equal to 2 mm were thus shaped. This represents an outstanding achievement considering the brittleness of such uncoated fibers. FEWS experiments were implemented using alcoholic solutions as target samples showing that the sensitivity is higher than with the routinely used classical fiber. It is also shown that the best compromise in term of sensitivity is to fabricate a sensing head including two full loops. From a mechanical point of view, the breaking loads of the loop shaped head are also much higher than with classical fiber. Finally, this achievement paves the way for the use of mid-infrared technology during in situ and even in vivo medical operations. Indeed, is is now possible to slide a chalcogenide glass fiber in the operating channel of a standard 2.8 mm diameter catheter. PMID:25264953

  10. Fabrication of an IR hollow-core Bragg fiber based on chalcogenide glass extrusion

    NASA Astrophysics Data System (ADS)

    Zhu, Minming; Wang, Xunsi; Pan, Zhanghao; Cheng, Ci; Zhu, Qingde; Jiang, Chen; Nie, Qiuhua; Zhang, Peiqing; Wu, Yuehao; Dai, Shixun; Xu, Tiefeng; Tao, Guangming; Zhang, Xianghua

    2015-05-01

    The theoretical analysis and experimental preparation of a hollow-core Bragg fiber based on chalcogenide glasses are demonstrated. The fiber has potential applications in bio-sensing and IR energy transmission. Two chalcogenide glasses with, respectively, high and low refractive indexes are investigated in detail for the fabrication of hollow-core Bragg fibers. The most appropriate structure is selected; this structure is composed of four concentric rings and a center air hole . Its band gap for the Bragg fiber is analyzed by the plane wave method. The chalcogenide glasses Ge15Sb20S58.5I13 and Ge15Sb10Se75 are chosen to extrude the robust multi-material glass preform with a specialized punch and glass container. The glass preform is simultaneously protected with a polyetherimide polymer. The hollow-core Bragg fibers are finally obtained after glass preform extrusion, fiber preform fabrication, and fiber drawing. Results showed that the fiber has a transparency window from 2.5 to 14 μm, including a low-loss transmission window from 10.5 to 12 μm. The location of this low-loss transmission window matches the predicted photonic band gap in the simulation.

  11. Template-directed assembly of metal-chalcogenide nanocrystals into ordered mesoporous networks.

    SciTech Connect

    Vamvasakis, Ioannis; Subrahmanyam, Kota S.; Kanatzidis, Mercouri G.; Armatas, Gerasimos S.

    2015-04-01

    Although great progress in the synthesis of porous networks of metal and metal oxide nanoparticles with highly accessible pore surface and ordered mesoscale pores has been achieved, synthesis of assembled 3D mesostructures of metal-chalcogenide nanocrystals is still challenging. In this work we demonstrate that ordered mesoporous networks, which comprise well-defined interconnected metal sulfide nanocrystals, can be prepared through a polymer-templated oxidative polymerization process. The resulting self-assembled mesostructures that were obtained after solvent extraction of the polymer template impart the unique combination of light-emitting metal chalcogenide nanocrystals, three-dimensional open-pore structure, high surface area, and uniform pores. We show that the pore surface of these materials is active and accessible to incoming molecules, exhibiting high photocatalytic activity and stability, for instance, in oxidation of 1-phenylethanol into acetophenone. We demonstrate through appropriate selection of the synthetic components that this method is general to prepare ordered mesoporous materials from metal chalcogenide nanocrystals with various sizes and compositions.

  12. Fabrication and characterization of multimaterial chalcogenide glass fiber tapers with high numerical apertures.

    PubMed

    Sun, Ya'nan; Dai, Shixun; Zhang, Peiqing; Wang, Xunsi; Xu, Yinsheng; Liu, Zijun; Chen, Feifei; Wu, Yuehao; Zhang, Yuji; Wang, Rongping; Tao, Guangming

    2015-09-01

    This paper reports on the fabrication and characterization of multimaterial chalcogenide fiber tapers that have high numerical apertures (NAs). We first fabricated multimaterial As(2)Se(3)-As(2)S(3) chalcogenide fiber preforms via a modified one-step coextrusion process. The preforms were drawn into multi- and single-mode fibers with high NAs (≈1.45), whose core/cladding diameters were 103/207 and 11/246 μm, respectively. The outer diameter of the fiber was tapered from a few hundred microns to approximately two microns through a self-developed automatic tapering process. Simulation results showed that the zero-dispersion wavelengths (ZDWs) of the tapers were shorter than 2 μm, indicating that the tapers can be conveniently pumped by commercial short wavelength infrared lasers. We also experimentally demonstrated the supercontinuum generation (SCG) in a 15-cm-long multimaterial As(2)Se(3)-As(2)S(3) chalcogenide taper with 1.9 μm core diameter and the ZDW was shifted to 3.3 μm. When pumping the taper with 100 fs short pulses at 3.4 µm, a 20 dB spectral of the generated supercontinuum spans from 1.5 μm to longer than 4.8 μm. PMID:26368447

  13. Ultrafast Microwave Nano-manufacturing of Fullerene-Like Metal Chalcogenides

    PubMed Central

    Liu, Zhen; Zhang, Lin; Wang, Ruigang; Poyraz, Selcuk; Cook, Jonathan; Bozack, Michael J.; Das, Siddhartha; Zhang, Xinyu; Hu, Liangbing

    2016-01-01

    Metal Chalcogenides (MCs) have emerged as an extremely important class of nanomaterials with applications ranging from lubrication to energy storage devices. Here we report our discovery of a universal, ultrafast (60 seconds), energy-efficient, and facile technique of synthesizing MC nanoparticles and nanostructures, using microwave-assisted heating. A suitable combination of chemicals was selected for reactions on Polypyrrole nanofibers (PPy-NF) in presence of microwave irradiation. The PPy-NF serves as the conducting medium to absorb microwave energy to heat the chemicals that provide the metal and the chalcogenide constituents separately. The MCs are formed as nanoparticles that eventually undergo a size-dependent, multi-stage aggregation process to yield different kinds of MC nanostructures. Most importantly, this is a single-step metal chalcogenide formation process that is much faster and much more energy-efficient than all the other existing methods and can be universally employed to produce different kinds of MCs (e.g., MoS2, and WS2). PMID:26931353

  14. Ultrafast Microwave Nano-manufacturing of Fullerene-Like Metal Chalcogenides

    NASA Astrophysics Data System (ADS)

    Liu, Zhen; Zhang, Lin; Wang, Ruigang; Poyraz, Selcuk; Cook, Jonathan; Bozack, Michael J.; Das, Siddhartha; Zhang, Xinyu; Hu, Liangbing

    2016-03-01

    Metal Chalcogenides (MCs) have emerged as an extremely important class of nanomaterials with applications ranging from lubrication to energy storage devices. Here we report our discovery of a universal, ultrafast (60 seconds), energy-efficient, and facile technique of synthesizing MC nanoparticles and nanostructures, using microwave-assisted heating. A suitable combination of chemicals was selected for reactions on Polypyrrole nanofibers (PPy-NF) in presence of microwave irradiation. The PPy-NF serves as the conducting medium to absorb microwave energy to heat the chemicals that provide the metal and the chalcogenide constituents separately. The MCs are formed as nanoparticles that eventually undergo a size-dependent, multi-stage aggregation process to yield different kinds of MC nanostructures. Most importantly, this is a single-step metal chalcogenide formation process that is much faster and much more energy-efficient than all the other existing methods and can be universally employed to produce different kinds of MCs (e.g., MoS2, and WS2).

  15. Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation

    SciTech Connect

    Mahjouri-Samani, Masoud; Tian, Mengkun; Wang, Kai; Boulesbaa, Abdelaziz; Rouleau, Christopher M.; Puretzky, Alexander A.; McGuire, Michael A.; Srijanto, Bernadeta R.; Xiao, Kai; Eres, Gyula; Duscher, Gerd; Geohegan, David B.

    2014-10-19

    Developing methods for the facile synthesis of two-dimensional (2D) metal chalcogenides and other layered materials is crucial for emerging applications in functional devices. Controlling the stoichiometry, number of the layers, crystallite size, growth location, and areal uniformity is challenging in conventional vapor phase synthesis. Here, we demonstrate a new route to control these parameters in the growth of metal chalcogenide (GaSe) and dichalcogenide (MoSe2) 2D crystals by precisely defining the mass and location of the source materials in a confined transfer growth system. A uniform and precise amount of stoichiometric nanoparticles are first synthesized and deposited onto a substrate by pulsed laser deposition (PLD) at room temperature. This source substrate is then covered with a receiver substrate to form a confined vapor transport growth (VTG) system. By simply heating the source substrate in an inert background gas, a natural temperature gradient is formed that evaporates the confined nanoparticles to grow large, crystalline 2D nanosheets on the cooler receiver substrate, the temperature of which is controlled by the background gas pressure. Large monolayer crystalline domains (~ 100 m lateral sizes) of GaSe and MoSe2 are demonstrated, as well as continuous monolayer films through the deposition of additional precursor materials. This novel PLD-VTG synthesis and processing method offers a unique approach for the controlled growth of large-area, metal chalcogenides with a controlled number of layers in patterned growth locations for optoelectronics and energy related applications.

  16. Case studies on the formation of chalcogenide self-assembled monolayers on surfaces and dissociative processes.

    PubMed

    Tong, Yongfeng; Jiang, Tingming; Bendounan, Azzedine; Harish, Makri Nimbegondi Kotresh; Giglia, Angelo; Kubsky, Stefan; Sirotti, Fausto; Pasquali, Luca; Sampath, Srinivasan; Esaulov, Vladimir A

    2016-01-01

    This report examines the assembly of chalcogenide organic molecules on various surfaces, focusing on cases when chemisorption is accompanied by carbon-chalcogen atom-bond scission. In the case of alkane and benzyl chalcogenides, this induces formation of a chalcogenized interface layer. This process can occur during the initial stages of adsorption and then, after passivation of the surface, molecular adsorption can proceed. The characteristics of the chalcogenized interface layer can be significantly different from the metal layer and can affect various properties such as electron conduction. For chalcogenophenes, the carbon-chalcogen atom-bond breaking can lead to opening of the ring and adsorption of an alkene chalcogenide. Such a disruption of the π-electron system affects charge transport along the chains. Awareness about these effects is of importance from the point of view of molecular electronics. We discuss some recent studies based on X-ray photoelectron spectroscopy that shed light on these aspects for a series of such organic molecules. PMID:26977383

  17. Structure and Dynamics of Ionic Liquids Confined in Amorphous Porous Chalcogenides.

    PubMed

    Ori, Guido; Massobrio, Carlo; Pradel, Annie; Ribes, Michel; Coasne, Benoit

    2015-06-23

    Besides the abundant literature on ionic liquids in porous silica and carbon, the confinement of such intriguing liquids in porous chalcogenides has received very little attention. Here, molecular simulation is employed to study the structural and dynamical properties of a typical ionic liquid confined in a realistic molecular model of amorphous chalcogenide with various pore sizes and surface chemistries. Using molecular dynamics in the isobaric-isothermal (NPT) ensemble, we consider confinement conditions relevant to real samples. Both the structure and self-dynamics of the confined phase are found to depend on the surface-to-volume ratio of the host confining material. Consequently, most properties of the confined ionic liquid can be written as a linear combination of surface and bulk-like contributions, arising from the ions in contact with the surface and the ions in the pore center, respectively. On the other hand, collective dynamical properties such as the ionic conductivity remain close to their bulk counterpart and almost insensitive to pore size and surface chemistry. These results, which are in fair agreement with available experimental data, provide a basis for the development of novel applications using hybrid organic-inorganic solids consisting of ionic liquids confined in porous chalcogenides. PMID:26030830

  18. Observation of universal strong orbital-dependent correlation effects in iron chalcogenides

    DOE PAGESBeta

    Yi, M.; Liu, Z. -K.; Zhang, Y.; Yu, R.; Zhu, J. -X.; Lee, J. J.; Moore, R. G.; Schmitt, F. T.; Li, W.; Riggs, S. C.; et al

    2015-07-23

    Establishing the appropriate theoretical framework for unconventional superconductivity in the iron-based materials requires correct understanding of both the electron correlation strength and the role of Fermi surfaces. This fundamental issue becomes especially relevant with the discovery of the iron chalcogenide superconductors. Here, we use angle-resolved photoemission spectroscopy to measure three representative iron chalcogenides, FeTe0.56Se0.44, monolayer FeSe grown on SrTiO3 and K0.76Fe1.72Se2. We show that these superconductors are all strongly correlated, with an orbital-selective strong renormalization in the dxy bands despite having drastically different Fermi surface topologies. Furthermore, raising temperature brings all three compounds from a metallic state to a phasemore » where the dxy orbital loses all spectral weight while other orbitals remain itinerant. As a result, these observations establish that iron chalcogenides display universal orbital-selective strong correlations that are insensitive to the Fermi surface topology, and are close to an orbital-selective Mott phase, hence placing strong constraints for theoretical understanding of iron-based superconductors.« less

  19. Case studies on the formation of chalcogenide self-assembled monolayers on surfaces and dissociative processes

    PubMed Central

    Bendounan, Azzedine; Harish, Makri Nimbegondi Kotresh; Giglia, Angelo; Kubsky, Stefan; Sirotti, Fausto; Pasquali, Luca; Sampath, Srinivasan

    2016-01-01

    Summary This report examines the assembly of chalcogenide organic molecules on various surfaces, focusing on cases when chemisorption is accompanied by carbon–chalcogen atom-bond scission. In the case of alkane and benzyl chalcogenides, this induces formation of a chalcogenized interface layer. This process can occur during the initial stages of adsorption and then, after passivation of the surface, molecular adsorption can proceed. The characteristics of the chalcogenized interface layer can be significantly different from the metal layer and can affect various properties such as electron conduction. For chalcogenophenes, the carbon–chalcogen atom-bond breaking can lead to opening of the ring and adsorption of an alkene chalcogenide. Such a disruption of the π-electron system affects charge transport along the chains. Awareness about these effects is of importance from the point of view of molecular electronics. We discuss some recent studies based on X-ray photoelectron spectroscopy that shed light on these aspects for a series of such organic molecules. PMID:26977383

  20. Observation of universal strong orbital-dependent correlation effects in iron chalcogenides

    SciTech Connect

    Yi, M.; Liu, Z. -K.; Zhang, Y.; Yu, R.; Zhu, J. -X.; Lee, J. J.; Moore, R. G.; Schmitt, F. T.; Li, W.; Riggs, S. C.; Chu, J. -H.; Lv, B.; Hu, J.; Hashimoto, M.; Mo, S. -K.; Hussain, Z.; Mao, Z. Q.; Chu, C. W.; Fisher, I. R.; Si, Q.; Shen, Z. -X.; Lu, D. H.

    2015-07-23

    Establishing the appropriate theoretical framework for unconventional superconductivity in the iron-based materials requires correct understanding of both the electron correlation strength and the role of Fermi surfaces. This fundamental issue becomes especially relevant with the discovery of the iron chalcogenide superconductors. Here, we use angle-resolved photoemission spectroscopy to measure three representative iron chalcogenides, FeTe0.56Se0.44, monolayer FeSe grown on SrTiO3 and K0.76Fe1.72Se2. We show that these superconductors are all strongly correlated, with an orbital-selective strong renormalization in the dxy bands despite having drastically different Fermi surface topologies. Furthermore, raising temperature brings all three compounds from a metallic state to a phase where the dxy orbital loses all spectral weight while other orbitals remain itinerant. As a result, these observations establish that iron chalcogenides display universal orbital-selective strong correlations that are insensitive to the Fermi surface topology, and are close to an orbital-selective Mott phase, hence placing strong constraints for theoretical understanding of iron-based superconductors.

  1. Ultrafast Microwave Nano-manufacturing of Fullerene-Like Metal Chalcogenides.

    PubMed

    Liu, Zhen; Zhang, Lin; Wang, Ruigang; Poyraz, Selcuk; Cook, Jonathan; Bozack, Michael J; Das, Siddhartha; Zhang, Xinyu; Hu, Liangbing

    2016-01-01

    Metal Chalcogenides (MCs) have emerged as an extremely important class of nanomaterials with applications ranging from lubrication to energy storage devices. Here we report our discovery of a universal, ultrafast (60 seconds), energy-efficient, and facile technique of synthesizing MC nanoparticles and nanostructures, using microwave-assisted heating. A suitable combination of chemicals was selected for reactions on Polypyrrole nanofibers (PPy-NF) in presence of microwave irradiation. The PPy-NF serves as the conducting medium to absorb microwave energy to heat the chemicals that provide the metal and the chalcogenide constituents separately. The MCs are formed as nanoparticles that eventually undergo a size-dependent, multi-stage aggregation process to yield different kinds of MC nanostructures. Most importantly, this is a single-step metal chalcogenide formation process that is much faster and much more energy-efficient than all the other existing methods and can be universally employed to produce different kinds of MCs (e.g., MoS2, and WS2). PMID:26931353

  2. Commission 42: Close Binaries

    NASA Astrophysics Data System (ADS)

    Giménez, Alvaro; Rucinski, Slavek; Szkody, P.; Gies, D.; Kang, Y.-W.; Linsky, J.; Livio, M.; Morrell, N.; Hilditch, R.; Nordström, B.; Ribas, I.; Sion, E.; Vrielman, S.

    2007-03-01

    The triennial report from Commission 42 covers various topics like massive binaries, contact systems, cataclysmic variables and low-mass binary stars. We try in a number of sections to provide an update on the current status of the main research areas in the field of close binaries. It is not a formal review, even complete or comprehensive, but an attempt to bring the main topics on recent research to astronomers working in other fields. References are also not comprehensive and simply added to the text to help the reader looking for deeper information on the subject. For this reason, we have chosen to include references (sometimes incomplete for ongoing work) not in a list at the end but integrated with the main text body. Complete references and additional sources can be easily obtained through web access of ADS or SIMBAD. Furthermore, the summary of papers on close-binary research contained in the Bibliography of Close Binaries (BCB) can be accessed from the web site of Commission 42. I would like to express the gratitude of the commission for the careful work of Colin Scarfe as Editor-in-Chief of BCB and Andras Holl and Attila Sragli for maintaining the web pages of the Commission within the structure of Division V. Finally, K. Olah and J. Jurcsik are gratefully acknowledged for their continued support as editors of the Information Bulletin on Variable Stars (IBVS), also accessible through the commission web page.

  3. Fundamental studies of chalcogenide nanocrystals, carbonaceous nanoparticles, and chromatographic materials

    NASA Astrophysics Data System (ADS)

    Baker, Jared Scott

    2011-12-01

    The development of novel nanomaterials and the understanding of their fundamental physical and chemical properties represent an exciting area of research. These materials are continuously being sought for ever-increasing applications; finding their way into uses that influence mankind on a daily basis. Combining elements from traditional nanoparticle characterization with electrophoretic-based techniques, this dissertation presents the analysis of carbon nanoparticles (CNPs) generated from a novel source (candle soot) as well as a unique perspective on the reactivity and degradation process of magic-sized cadmium chalcogenide nanocrystals. One potential application of CNPs is their use as an alternative fluorophore in a separation-based sensor system. Laser-induced-fluorescence (LIF) is a commonly used manner of detection in this type of platform, but is limited in many cases by problems associated with the fluorophore. Carbon-based nanoparticles have the potential to improve upon traditional fluorophores in applications that make use of LIF as the detection scheme. CNPs were extracted from the carbonaceous material produced by the incomplete combustion of a candle. The soot was submitted to an oxidizing treatment and extraction/filtration procedures rendering watersoluble luminescent species. Electron microscopy was used to identify globular, amorphous structures in the nanometer size-range. An aqueous suspension of CNPs demonstrated excellent stability in terms of its electronic properties, showing little change in absorption and emission spectra upon storage under ambient conditions over a two-year period. Capitalizing on the strengths of capillary electrophoresis (CE) as a characterization technique, we have analyzed the negatively-charged CNPs in terms of charge and size by studying the influence of variable CE conditions on the resulting separation. Separations at different pH revealed a highly complex mixture of CNPs, containing species with large

  4. Binary ferrihydrite catalysts

    DOEpatents

    Huffman, Gerald P.; Zhao, Jianmin; Feng, Zhen

    1996-01-01

    A method of preparing a catalyst precursor comprises dissolving an iron salt and a salt of an oxoanion forming agent, in water so that a solution of the iron salt and oxoanion forming agent salt has a ratio of oxoanion/Fe of between 0.0001:1 to 0.5:1. Next is increasing the pH of the solution to 10 by adding a strong base followed by collecting of precipitate having a binary ferrihydrite structure. A binary ferrihydrite catalyst precursor is also prepared by dissolving an iron salt in water. The solution is brought to a pH of substantially 10 to obtain ferrihydrite precipitate. The precipitate is then filtered and washed with distilled water and subsequently admixed with a hydroxy carboxylic acid solution. The admixture is mixed/agitated and the binary ferrihydrite precipitate is then filtered and recovered.

  5. Binary ferrihydrite catalysts

    DOEpatents

    Huffman, G.P.; Zhao, J.; Feng, Z.

    1996-12-03

    A method of preparing a catalyst precursor comprises dissolving an iron salt and a salt of an oxoanion forming agent, in water so that a solution of the iron salt and oxoanion forming agent salt has a ratio of oxoanion/Fe of between 0.0001:1 to 0.5:1. Next is increasing the pH of the solution to 10 by adding a strong base followed by collecting of precipitate having a binary ferrihydrite structure. A binary ferrihydrite catalyst precursor is also prepared by dissolving an iron salt in water. The solution is brought to a pH of substantially 10 to obtain ferrihydrite precipitate. The precipitate is then filtered and washed with distilled water and subsequently admixed with a hydroxy carboxylic acid solution. The admixture is mixed/agitated and the binary ferrihydrite precipitate is then filtered and recovered. 3 figs.

  6. Simulating Contact Binaries

    NASA Astrophysics Data System (ADS)

    Kadam, Kundan; Clayton, Geoffrey C.; Frank, Juhan; Tohline, Joel E.; Staff, Jan E.; Motl, Patrick M.; Marcello, Dominic

    2014-06-01

    About one in every 150 stars is a contact binary system of WUMa type and it was thought for a long time that such a binary would naturally proceed towards merger, forming a single star. In September 2008 such a merger was observed in the eruption of a “red nova", V1309 Sco. We are developing a hydrodynamics simulation for contact binaries using Self Consistent Field (SCF) techniques, so that their formation, structural, and merger properties could be studied. This model can also be used to probe the stability criteria such as the large-scale equatorial circulations and the minimum mass ratio. We also plan to generate light curves from the simulation data in order to compare with the observed case of V1309 Sco. A comparison between observations and simulations will help us better understand the nova-like phenomena of stellar mergers.

  7. Identification list of binaries

    NASA Astrophysics Data System (ADS)

    Malkov,, O.; Karchevsky,, A.; Kaygorodov, P.; Kovaleva, D.

    The Identification List of Binaries (ILB) is a star catalogue constructed to facilitate cross-referencing between different catalogues of binary stars. As of 2015, it comprises designations for approximately 120,000 double/multiple systems. ILB contains star coordinates and cross-references to the Bayer/Flemsteed, DM (BD/CD/CPD), HD, HIP, ADS, WDS, CCDM, TDSC, GCVS, SBC9, IGR (and some other X-ray catalogues), PSR designations, as well as identifications in the recently developed BSDB system. ILB eventually became a part of the BDB stellar database.

  8. Non-oxido divanadium(IV) and divanadium(V) thiolate complexes with a new type of chalcogenide bridging motif.

    PubMed

    Wu, Hong-Ming; Chang, Ya-Ho; Tsai, Yi-Fang; Hsu, Kuei-Fang; Lee, Gene-Hsiang; Hsu, Hua-Fen

    2015-03-14

    In our effort to study vanadium chalcogenide chemistry, we have synthesized and characterized a class of non-oxido divanadium(IV) and divanadium(V) complexes with chalcogenide and dichalcogenide as bridges. All structures consist of a similar divanadium motif, in which two metal centers are bridged by one μ-chalcogenide and one μ-η(2):η(2)-dichalcogenide, forming a V2(μ-E)(μ-η(2):η(2)-E2) (E = S or Se) core structure. These compounds are [V(IV)2(PS3)2(μ-Se2)(μ-Se)][PPh4]2 (1), [V(V)2(PS3'')2(μ-Se2)(μ-Se)] (2), [V(V)2(PS3'')2(μ-S2)(μ-S)] (3a) and [V(V)2(PS3)2(μ-S2)(μ-S)] (3b) ([PS3](3-) = P(C6H4-2-S)3 and [PS3''](3-) = P(C6H3-3-SiMe3-2-S)3). Compound 1 exhibits diamagnetic behavior, indicating strong antiferromagnetic coupling between two d(1) centers. Compounds 2 and 3a-b have the highest oxidation states for vanadium ions (+5/+5) among those reported divanadium chalcogenide clusters. The work demonstrates that high-valent divanadium chalcogenide clusters can be obtained with the activation of elemental chalcogens by low-valent vanadium ions. PMID:25645817

  9. Binary coding for hyperspectral imagery

    NASA Astrophysics Data System (ADS)

    Wang, Jing; Chang, Chein-I.; Chang, Chein-Chi; Lin, Chinsu

    2004-10-01

    Binary coding is one of simplest ways to characterize spectral features. One commonly used method is a binary coding-based image software system, called Spectral Analysis Manager (SPAM) for remotely sensed imagery developed by Mazer et al. For a given spectral signature, the SPAM calculates its spectral mean and inter-band spectral difference and uses them as thresholds to generate a binary code word for this particular spectral signature. Such coding scheme is generally effective and also very simple to implement. This paper revisits the SPAM and further develops three new SPAM-based binary coding methods, called equal probability partition (EPP) binary coding, halfway partition (HP) binary coding and median partition (MP) binary coding. These three binary coding methods along with the SPAM well be evaluated for spectral discrimination and identification. In doing so, a new criterion, called a posteriori discrimination probability (APDP) is also introduced for performance measure.

  10. Binary concatenated coding system

    NASA Technical Reports Server (NTRS)

    Monford, L. G., Jr.

    1973-01-01

    Coding, using 3-bit binary words, is applicable to any measurement having integer scale up to 100. System using 6-bit data words can be expanded to read from 1 to 10,000, and 9-bit data words can increase range to 1,000,000. Code may be ''read'' directly by observation after memorizing simple listing of 9's and 10's.

  11. Separation in Binary Alloys

    NASA Technical Reports Server (NTRS)

    Frazier, D. O.; Facemire, B. R.; Kaukler, W. F.; Witherow, W. K.; Fanning, U.

    1986-01-01

    Studies of monotectic alloys and alloy analogs reviewed. Report surveys research on liquid/liquid and solid/liquid separation in binary monotectic alloys. Emphasizes separation processes in low gravity, such as in outer space or in free fall in drop towers. Advances in methods of controlling separation in experiments highlighted.

  12. Binary primitive alternant codes

    NASA Technical Reports Server (NTRS)

    Helgert, H. J.

    1975-01-01

    In this note we investigate the properties of two classes of binary primitive alternant codes that are generalizations of the primitive BCH codes. For these codes we establish certain equivalence and invariance relations and obtain values of d and d*, the minimum distances of the prime and dual codes.

  13. Interacting binaries. Lecture notes 1992.

    NASA Astrophysics Data System (ADS)

    Nussbaumer, H.; Orr, A.

    These lecture notes represent a unique collection of information and references on current research on interacting binaries: S. N. Shore puts the emphasis on observations and their connection to relevant physics. He also discusses symbiotic stars. Cataclysmic variables are the subject of M. Livio's course, whereas E. P. J. van den Heuvel concentrates on more massive binaries and X-ray binaries.

  14. Robust multimaterial tellurium-based chalcogenide glass fibers for mid-wave and long-wave infrared transmission.

    PubMed

    Tao, Guangming; Shabahang, Soroush; Ren, He; Khalilzadeh-Rezaie, Farnood; Peale, Robert E; Yang, Zhiyong; Wang, Xunsi; Abouraddy, Ayman F

    2014-07-01

    We describe an approach for producing robust multimaterial chalcogenide glass fibers for mid-wave and long-wave mid-infrared transmission. By combining the traditional rod-in-tube process with multimaterial coextrusion, we prepare a hybrid glass-polymer preform that is drawn continuously into a robust step-index fiber with a built-in, thermally compatible polymer jacket. Using tellurium-based chalcogenides, the fibers have a transparency window covering the 3-12 μm spectral range, making them particularly attractive for delivering quantum cascade laser light and in space applications. PMID:24978794

  15. Intrinsic "Vacancy Point Defect" Induced Electrochemiluminescence from Coreless Supertetrahedral Chalcogenide Nanocluster.

    PubMed

    Wang, Feng; Lin, Jian; Zhao, Tingbi; Hu, Dandan; Wu, Tao; Liu, Yang

    2016-06-22

    A deep understanding of distinct functional differences of various defects in semiconductor materials is conducive to effectively control and rationally tune defect-induced functionalities. However, such research goals remain a substantial challenge due to great difficulties in identifying the defect types and distinguishing their own roles, especially when various defects coexist in bulk or nanoscale material. Hereby, we subtly selected a molecular-type semiconductor material as structural mode composed of supertetrahedral chalcogenide Cd-In-S nanoclusters (NCs) with intrinsic vacancy point defect at the core site and antisite point defects at the surface of supertetrahedron and successfully established the correlation of those point defects with their own electrochemiluminescence (ECL) behaviors. The multichannel ECL properties were recorded, and the corresponding reaction mechanisms were also proposed. The predominant radiation recombination path of ECL emission peak at 585 nm was significantly distinguished from asymmetrically broad PL emission with a peak at 490 nm. In addition, the ECL performance of the coreless supertetrahedral chalcogenide nanocluster can be modulated by atomically precise doping of monomanganese ion at the core vacant site. A relatively high ECL efficiency of 2.1% was also gained. Actually, this is the first investigation of ECL behavior of semiconductor materials based on supertetrahedral chalcogenide nanocluster in aqueous solution. Current research may open up a new avenue to probe the roles of various different defects with defined composition and position in the NC. The versatile and bright ECL properties of Cd-In-S NC combined with tunable ECL potential and ECL peak suggest that the new kind of NC-based ECL material may hold great promising for its potential applications in electrochemical analysis, sensing, and imaging. PMID:27228563

  16. Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation

    DOE PAGESBeta

    Mahjouri-Samani, Masoud; Tian, Mengkun; Wang, Kai; Boulesbaa, Abdelaziz; Rouleau, Christopher M.; Puretzky, Alexander A.; McGuire, Michael A.; Srijanto, Bernadeta R.; Xiao, Kai; Eres, Gyula; et al

    2014-10-19

    Developing methods for the facile synthesis of two-dimensional (2D) metal chalcogenides and other layered materials is crucial for emerging applications in functional devices. Controlling the stoichiometry, number of the layers, crystallite size, growth location, and areal uniformity is challenging in conventional vapor phase synthesis. Here, we demonstrate a new route to control these parameters in the growth of metal chalcogenide (GaSe) and dichalcogenide (MoSe2) 2D crystals by precisely defining the mass and location of the source materials in a confined transfer growth system. A uniform and precise amount of stoichiometric nanoparticles are first synthesized and deposited onto a substrate bymore » pulsed laser deposition (PLD) at room temperature. This source substrate is then covered with a receiver substrate to form a confined vapor transport growth (VTG) system. By simply heating the source substrate in an inert background gas, a natural temperature gradient is formed that evaporates the confined nanoparticles to grow large, crystalline 2D nanosheets on the cooler receiver substrate, the temperature of which is controlled by the background gas pressure. Large monolayer crystalline domains (~ 100 m lateral sizes) of GaSe and MoSe2 are demonstrated, as well as continuous monolayer films through the deposition of additional precursor materials. This novel PLD-VTG synthesis and processing method offers a unique approach for the controlled growth of large-area, metal chalcogenides with a controlled number of layers in patterned growth locations for optoelectronics and energy related applications.« less

  17. Optical property tuning of bismuth chalcogenides using chemical intercalation (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Yao, Jie

    2015-10-01

    Two-dimensional (2D) materials with natural layer structures have been proven to provide extraordinary physical and chemical properties. Bismuth chalcogenides are examples of such two-dimensional materials. They are strongly bonded within layers and weak van der Waals interaction ties those layers together. Such naturally layered structure allows chemical intercalation of foreign atoms into the van der Waals gaps. Here, we show that by adding large number of copper atoms into van der Waals gaps of bismuth chalcogenides, we observed counter-intuitive enhancement of optical transparency together with improved electrical conductivity, which is on the contrary to most bulk materials in which doping reduces the light transmission. This surprising behavior is caused by substantial tuning of material optical property and nanophotonic anti-reflection effect unique to ultra-thin nanoplates. With the intercalation of copper atoms, large number of electrons have been added into the semiconducting material system and effectively lift the Fermi level of the resulting material to its conduction band, as proved by our densityfunctional- theory computations. Occupied lower states in the conduction band do not allow the optical excitation of electrons in the valence band to the bottom of the conduction band, leading to an effective widening of optical band gap. Optical transmission is further enhanced by constructive interference of reflected beams as bismuth chalcogenides have large permittivity than the environment. The synergy of these two effects in two-dimensional nanostructures can be exploited for various optoelectronic applications including transparent electrode. The reversible intercalation process allows potential dynamic tuning capability.

  18. Carrier-type reversal in metal modified chalcogenide glasses: Results of thermal transport measurements

    NASA Astrophysics Data System (ADS)

    Rajesh, R.; Philip, J.

    2003-06-01

    It is known that chalcogenide glasses, in general, are p-type semiconductors. This is attributed to the following two reasons. (i) The number of electrons excited above the conduction band mobility edge is smaller than the number of holes excited below the valence band mobility edge. (ii) The lifetime of the free holes excited from positive defect states is higher than the lifetime of free electrons excited from negative defect states. Moreover, chalcogenide glasses are rather insensitive to impurity doping because their Fermi levels are pinned near the middle of the band gap by valence alternation pairs. However, it is found that the chemical modification of certain chalcogenide glasses by metallic elements such as lead and bismuth changes the conduction to n type at specific metal concentrations. This phenomenon, called carrier-type reversal (CTR), is explained in terms of the unpinning of the Fermi level and the consequent enhancement in electron concentration in the medium. In this work we report the results of our measurement of the thermal properties-thermal diffusivity, effusivity, conductivity and heat capacity—on four glass systems that are known to undergo CTR at specific metal concentrations. The photopyroelectric technique has been used to make these measurements on bulk samples prepared by melt quenching. Four series of glasses, PbxGe42-xSe58 (x=0-20), Pb20GeySe80-y (y=17-24), BixGe20Se80-x (x=2-12) and PbxIn25-xSe75 (x=0-15) which are known to undergo CTR at specific metal concentrations, have been subjected to the investigations reported in this work. It is found that all the above thermal properties show anomalous variations at the metal concentrations at which CTR occurs. The results are explained in terms of the enhancement in electron concentration during CTR in the material.

  19. A feasibility study of unconventional planar ligand spacers in chalcogenide nanocrystals.

    PubMed

    Lukose, Binit; Clancy, Paulette

    2016-05-18

    The solar cell efficiency of chalcogenide nanocrystals (quantum dots) has been limited in the past by the insulation between neighboring quantum dots caused by intervening, often long-chain, aliphatic ligands. We have conducted a computationally based feasibility study to investigate the use of ultra-thin, planar, charge-conducting ligands as an alternative to traditional long passive ligands. Not only might these radically unconventional ligands decrease the mean distance between adjacent quantum dots, but, since they are charge-conducting, they have the potential to actively enhance charge migration. Our ab initio studies compare the binding energies, electronic energy gaps, and absorption characteristics for both conventional and unconventional ligands, such as phthalocyanines, porphyrins and coronene. This comparison identified these unconventional ligands with the exception of titanyl phthalocyanine, that bind to themselves more strongly than to the surface of the quantum dot, which is likely to be less desirable for enhancing charge transport. The distribution of finite energy levels of the bound system is sensitive to the ligand's binding site and the levels correspond to delocalized states. We also observed a trap state localized on a single Pb atom when a sulfur-containing phenyldithiocarbamate (PTC) ligand is attached to a slightly off-stoichiometric dot in a manner that the sulfur of the ligand completes stoichiometry of the bound system. Hence, this is indicative of the source of trap state when thio-based ligands are bound to chalcogenide nanocrystals. We also predict that titanyl phthalocyanine in a mix with chalcogenide dots of diameter ∼1.5 Å can form a donor-acceptor system. PMID:26918246

  20. Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy

    NASA Astrophysics Data System (ADS)

    Bosse, J. L.; Timofeeva, M.; Tovee, P. D.; Robinson, B. J.; Huey, B. D.; Kolosov, O. V.

    2014-10-01

    The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by scanning thermal microscopy (SThM). By SThM measurements and quantitative finite element analysis simulations of two film thicknesses, the PCM thermal conductivities and thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry.

  1. Second-order Bragg gratings in single-mode chalcogenide fibres

    SciTech Connect

    Bernier, M; Asatryan, K E; Vallee, R; Galstian, T M; Vasil'ev, Sergei A; Medvedkov, O I; Plotnichenko, V G; Gnusin, P I; Dianov, Evgenii M

    2011-05-31

    Bragg gratings with a second-order resonance wavelength in the near-IR spectral region have been inscribed into single-mode chalcogenide (As{sub 2}S{sub 3}) glass fibre by a He - Ne laser beam using a configuration typical of Bragg grating fabrication in germanosilicate fibre, with the use of a phase mask that ensures effective diffraction of the writing light into the +1 and -1 orders. The spectra of the inscribed gratings show no resonances due to cladding mode excitation because the cladding material is photosensitive. (fibre optics)

  2. The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

    SciTech Connect

    Carey, John J.; Allen, Jeremy P.; Scanlon, David O.; Watson, Graeme W.

    2014-05-01

    In this study, density functional theory is used to evaluate the electronic structure of the antimony chalcogenide series. Analysis of the electronic density of states and charge density shows that asymmetric density, or ‘lone pairs’, forms on the Sb{sup III} cations in the distorted oxide, sulphide and selenide materials. The asymmetric density progressively weakens down the series, due to the increase in energy of valence p states from O to Te, and is absent for Sb{sub 2}Te{sub 3}. The fundamental and optical band gaps were calculated and Sb{sub 2}O{sub 3}, Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have indirect band gaps, while Sb{sub 2}Te{sub 3} was calculated to have a direct band gap at Γ. The band gaps are also seen to reduce from Sb{sub 2}O{sub 3} to Sb{sub 2}Te{sub 3}. The optical band gap for Sb{sub 2}O{sub 3} makes it a candidate as a transparent conducting oxide, while Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have suitable band gaps for thin film solar cell absorbers. - Graphical abstract: A schematic illustrating the interaction between the Sb{sup III} cations and the chalcogenide anions and the change in their respective energy levels down the series. - Highlights: • The electronic structure of the antimony chalcogenide series is modelled using DFT. • Asymmetric density is present on distorted systems and absent on the symmetric telluride system. • Asymmetric density is formed from the mixing of Sb 5s and anion p states, where the anti-bonding combination is stabilised by the Sb 5p states. • The asymmetric density weakens down the series due to the increase in energy of chalcogenide p states. • The increase in energy of the anion p states reduces the fundamental and optical band gaps.

  3. Frequency dependent electrical measurements of amorphous GeSbSe chalcogenide thin films

    SciTech Connect

    Mirsaneh, M.; Furman, E.; Ryan, Joseph V.; Lanagan, M. T.; Pantano, C. G.

    2010-03-22

    A commercial bulk chalcogenide glass (Ge28Sb12Se60) was used as a source to fabricate amorphous thin films via thermal evaporation technique. At low frequencies (1 MHz) impedance spectroscopy was performed to measure electrical properties. To measure ac conductivity at microwave frequencies, a split resonance cavity technique was applied for which a model based on parallel arrangement of substrate and film capacitors was developed. This model was used to extract tan8 and ac conductivity of the films. Microwave ac conductivity was correlated with the extrapolated low frequency conductivity data confirming applicability of the universal law commonly observed in amorphous semiconductors.

  4. Chalcogenide double index fibers: fabrication, design, and application as a chemical sensor

    SciTech Connect

    Le Coq, D.; Boussard-Pledel, C.; Fonteneau, G.; Pain, T.; Bureau, B.; Adam, J.L

    2003-10-30

    Double index chalcogenide fibers, based on tellurium, arsenic, and selenium, have been made by an original technique. This technique, based on the build-in-casting method, is achieved in a sealed silica ampoule. In view of the low attenuation obtained in the mid-infrared (IR), these fibers are used to implement Fiber Evanescent Wave Spectroscopy (FEWS). As the IR light is only propagated through the core of the waveguide, a chemical etching is applied in order to remove the glassy cladding of the sensing zone. IR spectra of ethanol and chloroform, recorded with such sensor, are presented showing the high sensitivity of the method.

  5. ARPES studies on FeTe1-x Se x iron chalcogenides epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Innocenti, Davide; Moreschini, Luca; Chang, Young Jun; Walter, Andrew; Bostwick, Aaron; di Castro, Daniele; Tebano, Antonello; Medaglia, Pier Gianni; Bellingeri, Emilio; Pallecchi, Ilaria; Ferdeghini, Carlo; Balestrino, Giuseppe; Rotenberg, Eli

    2011-03-01

    The physics of iron-based chalcogenides raises fundamental questions on the interplay of magnetic order and electron pairing at the origin of the superconducting state. We have performed angle-resolved photemission spectroscopy (ARPES) studies on high-quality epitaxial thin films of FeTe 1-x Se x , grown by in situ pulsed laser deposition (PLD) on beamline 7.0.1 at the ALS. Specifically, we are able to show the evolution of the band structure as a function of x. We discuss our experimental results in comparison to the available theoretical band calculations.

  6. Octave-spanning infrared supercontinuum generation in robust chalcogenide nanotapers using picosecond pulses.

    PubMed

    Shabahang, Soroush; Marquez, Michael P; Tao, Guangming; Piracha, Mohammad U; Nguyen, Dat; Delfyett, Peter J; Abouraddy, Ayman F

    2012-11-15

    We report on infrared supercontinuum generation extending over more than one octave of bandwidth, from 850 nm to 2.35 μm, produced in a single spatial mode from a robust, compact, composite chalcogenide glass nanotaper. A picosecond laser at 1.55 μm pumps a high-index-contrast, all-solid nanotaper that strongly confines the field to a 480 nm diameter core, while a thermally compatible built-in polymer jacket lends the nanotaper mechanical stability. PMID:23164864

  7. Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

    NASA Astrophysics Data System (ADS)

    Zogg, Hans; Arnold, Martin

    2007-01-01

    Narrow spectral band infrared detectors are required for multispectral infrared imaging. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide (PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial Bragg mirror (consisting of quarter wavelength PbEuSe/BaF 2 pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50% are obtained.

  8. Chalcogenide glasses for infrared applications: New synthesis routes and rare earth doping

    NASA Astrophysics Data System (ADS)

    Hubert, Mathieu

    Chalcogenide glasses and glass-ceramics present a high interest for the production of thermal imaging lenses transparent in the 3--5 microm and 8--12 microm windows. However, chalcogenide glasses are conventionally synthesized utilizing expensive and single use silica ampoules sealed under vacuum. The present work addresses the development of innovative synthesis methods for chalcogenide glasses that can present an alternative to the silica tube route. The first approach assessed by melting the raw starting elements in reusable silica containers appears inadequate for synthesis of glasses from the system Ge-Ga-Se. The second synthesis approach consists of the preparation of amorphous chalcogenide powders by ball milling of raw elements (mechanosynthesis) followed by consolidation of the as-prepared powders. Hot Uniaxial Pressing is suitable for sintering of powders with compositions stable against crystallization but uncontrolled crystallization occurs for the unstable compositions. In contrast, consolidation through Spark Plasma Sintering (SPS) allows production of bulk glasses with large dimensions in a short duration and at relatively low temperatures. Moreover, increased SPS treatment duration yields infrared transparent glass-ceramics with enhanced mechanical properties. This innovative synthesis method combining mechanosynthesis and SPS has been patented in the framework if this study. The controlled etching of 80GeSe2-20Ga2Se 3 glass-ceramics in acid solution yields nanoporous materials with enhanced surface area. The porous layer created on the surface of the glass-ceramic plays the role of anti-reflection coating and increases the optical transmission in the infrared range by 10%. These materials present potential for the production of sensors with increased sensitivity. The influence of indium and lead addition on the thermal and optical properties of the 80GeSe2-20Ga2Se3 glass is also assessed. Increased In or Pb contents tend to decrease the Tg and

  9. Enhancing light emission efficiency without color change in post-transition metal chalcogenides

    NASA Astrophysics Data System (ADS)

    Wang, Cong; Yang, Shengxue; Cai, Hui; Ataca, Can; Chen, Hui; Zhang, Xinzheng; Xu, Jingjun; Chen, Bin; Wu, Kedi; Zhang, Haoran; Liu, Luqi; Li, Jingbo; Grossman, Jeffrey C.; Tongay, Sefaattin; Liu, Qian

    2016-03-01

    Two-dimensional (2D) materials can take a large amount of mechanical deformation before reaching the fracture limit due to their high Young's modulus, and this in return, provides a way to tune the properties of 2D materials by strain engineering. Previous works have shown that the optical band gap of transition metal chalcogenides (TMDs) can be modulated by strain, resulting in a drift of the photoluminescence (PL) peak position and a decrease (or little change) in PL intensity. Here, we report a member of the post-transition metal chalcogenides (PTMCs), 2D-GaSe sheets, displaying vastly different phenomena under strain. Strained 2D-GaSe emits photons at almost the same wavelength as unstrained material but appears an order of magnitude brighter. In contrast to TMDs, optical spectroscopy measurements reveal that changes in the optical properties are mostly related to the colossal optical absorption anisotropy of GaSe, instead of commonly accepted strain-induced band renormalization. Results suggest that the light-matter interaction and the optical properties of 2D-GaSe can be controlled at will by manipulating the optical absorption.Two-dimensional (2D) materials can take a large amount of mechanical deformation before reaching the fracture limit due to their high Young's modulus, and this in return, provides a way to tune the properties of 2D materials by strain engineering. Previous works have shown that the optical band gap of transition metal chalcogenides (TMDs) can be modulated by strain, resulting in a drift of the photoluminescence (PL) peak position and a decrease (or little change) in PL intensity. Here, we report a member of the post-transition metal chalcogenides (PTMCs), 2D-GaSe sheets, displaying vastly different phenomena under strain. Strained 2D-GaSe emits photons at almost the same wavelength as unstrained material but appears an order of magnitude brighter. In contrast to TMDs, optical spectroscopy measurements reveal that changes in the optical

  10. Inducing chalcogenide phase change with ultra-narrow carbon nanotube heaters

    NASA Astrophysics Data System (ADS)

    Xiong, Feng; Liao, Albert; Pop, Eric

    2009-12-01

    Carbon nanotube (CNT) heaters with sub-5 nm diameter induce highly localized phase change in Ge2Sb2Te5 (GST) chalcogenide. A significant reduction in resistance of test structures is measured as the GST near the CNT heater crystallizes. Effective GST heating occurs at currents as low as 25 μA, significantly lower than in conventional phase change memory with metal electrodes (0.1-0.5 mA). Atomic force microscopy reveals nucleation sites associated with phase change in GST around the CNT heater. Finite element simulations confirm electrical characteristics consistent with the experiments, and reveal the current and phase distribution in GST.